Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Zero-state Markov switching count-data models: an empirical assessment.

PubMed

Malyshkina, Nataliya V; Mannering, Fred L

2010-01-01

In this study, a two-state Markov switching count-data model is proposed as an alternative to zero-inflated models to account for the preponderance of zeros sometimes observed in transportation count data, such as the number of accidents occurring on a roadway segment over some period of time. For this accident-frequency case, zero-inflated models assume the existence of two states: one of the states is a zero-accident count state, which has accident probabilities that are so low that they cannot be statistically distinguished from zero, and the other state is a normal-count state, in which counts can be non-negative integers that are generated by some counting process, for example, a Poisson or negative binomial. While zero-inflated models have come under some criticism with regard to accident-frequency applications - one fact is undeniable - in many applications they provide a statistically superior fit to the data. The Markov switching approach we propose seeks to overcome some of the criticism associated with the zero-accident state of the zero-inflated model by allowing individual roadway segments to switch between zero and normal-count states over time. An important advantage of this Markov switching approach is that it allows for the direct statistical estimation of the specific roadway-segment state (i.e., zero-accident or normal-count state) whereas traditional zero-inflated models do not. To demonstrate the applicability of this approach, a two-state Markov switching negative binomial model (estimated with Bayesian inference) and standard zero-inflated negative binomial models are estimated using five-year accident frequencies on Indiana interstate highway segments. It is shown that the Markov switching model is a viable alternative and results in a superior statistical fit relative to the zero-inflated models.

High Efficiency Single Output ZVS-ZCS Voltage Doubled Flyback Converter

NASA Astrophysics Data System (ADS)

Kaliyaperumal, Deepa; Saju, Hridya Merin; Kumar, M. Vijaya

2016-06-01

A switch operating at high switching frequency increases the switching losses of the converter resulting in lesser efficiency. Hence this paper proposes a new topology which has resonant switches [zero voltage switching (ZVS)] in the primary circuit to eliminate the above said disadvantages, and voltage doubler zero current switching (ZCS) circuit in the secondary to double the output voltage, and hence the output power, power density and efficiency. The design aspects of the proposed topology for a single output of 5 V at 50 kHz, its simulation and hardware results are discussed in detail. The analysis of the results obtained from a 2.5 W converter reveals the superiority of the proposed converter.

Voltage-Driven Conformational Switching with Distinct Raman Signature in a Single-Molecule Junction.

PubMed

Bi, Hai; Palma, Carlos-Andres; Gong, Yuxiang; Hasch, Peter; Elbing, Mark; Mayor, Marcel; Reichert, Joachim; Barth, Johannes V

2018-04-11

Precisely controlling well-defined, stable single-molecule junctions represents a pillar of single-molecule electronics. Early attempts to establish computing with molecular switching arrays were partly challenged by limitations in the direct chemical characterization of metal-molecule-metal junctions. While cryogenic scanning probe studies have advanced the mechanistic understanding of current- and voltage-induced conformational switching, metal-molecule-metal conformations are still largely inferred from indirect evidence. Hence, the development of robust, chemically sensitive techniques is instrumental for advancement in the field. Here we probe the conformation of a two-state molecular switch with vibrational spectroscopy, while simultaneously operating it by means of the applied voltage. Our study emphasizes measurements of single-molecule Raman spectra in a room-temperature stable single-molecule switch presenting a signal modulation of nearly 2 orders of magnitude.

High Performance ZVT with Bus Clamping Modulation Technique for Single Phase Full Bridge Inverters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Yinglai; Ayyanar, Raja

2016-03-20

This paper proposes a topology based on bus clamping modulation and zero-voltage-transition (ZVT) technique to realize zero-voltage-switching (ZVS) for all the main switches of the full bridge inverters, and inherent ZVS and/or ZCS for the auxiliary switches. The advantages of the strategy include significant reduction in the turn-on loss of the ZVT auxiliary switches which typically account for a major part of the total loss in other ZVT circuits, and reduction in the voltage ratings of auxiliary switches. The modulation scheme and the commutation stages are analyzed in detail. Finally, a 1kW, 500 kHz switching frequency inverter of the proposedmore » topology using SiC MOSFETs has been built to validate the theoretical analysis. The ZVT with bus clamping modulation technique of fixed timing and adaptive timing schemes are implemented in DSP TMS320F28335 resulting in full ZVS for the main switches in the full bridge inverter. The proposed scheme can save up to 33 % of the switching loss compared with no ZVT case.« less

High Voltage, Solid-State Switch for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Prager, James; Miller, Kenneth E.; Slobodov, Ilia

2017-10-01

Eagle Harbor Technologies, Inc. is developing a series stack of solid-state switches to produce a single high voltage switch that can be operated at over 35 kV. During the Phase I program, EHT developed two high voltage switch modules: one with isolated power gate drive and a second with inductively coupled gate drive. These switches were tested at 15 kV and up to 300 A at switching frequencies up to 500 kHz for 10 ms bursts. Robust switching was demonstrated for both IGBTs and SiC MOSFETs. During the Phase II program, EHT will develop a higher voltage switch (>35 kV) that will be suitable for high pulsed and average power applications. EHT will work with LTX to utilize these switches to design, build, and test a pulsed magnetron driver that will be delivered to LTX before the completion of the program. EHT will present data from the Phase I program as well as preliminary results from the start of the Phase II program. With support of DOE SBIR.

A voltage-division-type low-jitter self-triggered repetition-rate switch.

PubMed

Su, Jian-Cang; Zeng, Bo; Gao, Peng-Cheng; Li, Rui; Wu, Xiao-Long; Zhao, Liang

2016-10-01

A voltage-division-type (V/N) low-jitter self-triggered multi-stage switch is put forward. It comprises of a triggered corona gap, several quasi-uniform-field gaps, and an inversion inductor. When the corona gap is in the stage of self-breakdown, the multi-stage gaps are triggered and the switch is closed via an over-voltage. This type of V/N switch has the advantage of compact structure since the auxiliary components like the gas-blowing system and the triggered system are eliminated from the whole system. It also has advantages such as low breakdown jitter and high energy efficiency. The dependence of the self-triggered voltage on the over-voltage factor and the switch operating voltage is deduced. A switch of this type is designed and fabricated and experiments to research its characteristics are conducted. The results show that this switch can operate on a voltage of 1 MV at 50 Hz and can generate 1000 successive pulses with a jitter as low as 3% and an energy efficiency as high as 90%. This V/N switch can work under a high repetition rate with a long lifetime.

Switched-capacitor isolated LED driver

DOEpatents

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

A Comparison of High-Voltage Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, K.W.; Scott, G.L.

1999-02-01

This report summarizes our work on high-voltage switches during the past few years. With joint funding from the Department of Energy (DOE) and the Department of Defense (DOD), we tested a wide variety of switches to a common standard. This approach permitted meaningful comparisons between disparate switches. Most switches were purchased from commercial sources, though some were experimental devices. For the purposes of this report, we divided the switches into three generic types (gas, vacuum, and semiconductor) and selected data that best illustrates important strengths and weaknesses of each switch type. Test techniques that indicate the state of health ofmore » the switches are emphasized. For example, a good indicator of residual gas in a vacuum switch is the systematic variation of the switching delay in response to changes in temperature and/or operating conditions. We believe that the presentation of this kind of information will help engineers to select and to test switches for their particular applications. Our work was limited to switches capable of driving slappers. Also known as exploding-foil initiators, slappers are detonators that initiate a secondary explosive by direct impact with a small piece of matter moving at the detonation velocity (several thousands of meters per second). A slapper is desirable for enhanced safety (no primary explosive), but it also places extra demands on the capacitor-discharge circuit to deliver a fast-rising current pulse (greater than 10 A/ns) of several thousand amperes. The required energy is substantially less than one joule; but this energy is delivered in less than one microsecond, taking the peak power into the megawatt regime. In our study, the switches operated in the 1 kV to 3 kV range and were physically small, roughly 1 cm{sup 3} or less. Although a fuze functions only once in actual use, multiple-shot capability is important for production testing and for research work. For this reason, we restricted this

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

Ping-pong auto-zero amplifier with glitch reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Larson, Mark R

A ping-pong amplifier with reduced glitching is described. The ping-pong amplifier includes a nulling amplifier coupled to a switching network. The switching network is used to auto-zero a ping amplifier within a ping-pong amplifier. The nulling amplifier drives the output of a ping amplifier to a proper output voltage level during auto-zeroing of the ping amplifier. By being at a proper output voltage level, glitches associated with transitioning between a ping amplifier and a pong amplifier are reduced or eliminated.

Dead-time optimisation with reducing voltage distortion for nine-switch inverter

NASA Astrophysics Data System (ADS)

Alizadeh Pahlavani, Mohamadreza; Sanatgar Hasankiadeh, Meisam; Bali Lashak, Aref

2018-03-01

Nine-switch inverter with two sets of three-phase outputs is an improved topology proposed in place of the 12-switch back-to-back converters and has therefore attracted much attention in recent years. This inverter can be used with two conventional pulse width modulation approaches: different frequency and the constant frequency. One disadvantage of using this modulation method is the possibility of short-circuits in the legs (shoot-through), which decreases the reliability of converter and system. This paper presents a new modulation technique, in which switching pulses of nine-switch inverter are produced by not only the original carrier signals but also through two auxiliary carrier signals. In this method, adjustable three-phase voltages are produced in the inverter's terminals, and so there is no possibility of any shoot-through in the inverter's legs. The suggested reliable modulation approach does not rely on any information about the load polarity, as switching is performed by a simple and reliable algorithm. The result is the considerably better waveform quality of the output voltages in comparison with other methods. To verify the analysis, an experimental platform based on DSP is built. The simulation and experimental results are given to demonstrate the effectiveness and feasibility of this new approach.

Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Kumar, Amit; Chandran, Achu; Rangra, Kamaljit

2017-02-01

Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 µm to 1 µm. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range.

High-voltage, low-inductance gas switch

DOEpatents

Gruner, Frederick R.; Stygar, William A.

2016-03-22

A low-inductance, air-insulated gas switch uses a de-enhanced annular trigger ring disposed between two opposing high voltage electrodes. The switch is DC chargeable to 200 kilovolts or more, triggerable, has low jitter (5 ns or less), has pre-fire and no-fire rates of no more than one in 10,000 shots, and has a lifetime of greater than 100,000 shots. Importantly, the switch also has a low inductance (less than 60 nH) and the ability to conduct currents with less than 100 ns rise times. The switch can be used with linear transformer drives or other pulsed-power systems.

High voltage coaxial switch

DOEpatents

Rink, J.P.

1983-07-19

A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

High voltage coaxial switch

DOEpatents

Rink, John P.

1983-07-19

A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

NASA Astrophysics Data System (ADS)

Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

2014-12-01

Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

Novel control system of the high-voltage IGBT-switch

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Mamontov, Y. I.; Gusev, A. I.; Pedos, M. S.

2017-05-01

HV solid-state switch control circuit was developed and tested. The switch was made with series connection IGBT-transistors. The distinctive feature of the circuit is an ability to fine-tune the switching time of every transistor. Simultaneous switching provides balancing of the dynamic voltage at all switch elements. A separate control board switches on and off every transistor. On and off signals from the main conductor are sent to the board by current pulses of different polarity. A positive pulse provides the transistor switch-on, while a negative pulse provides their switch-off. The time interval between pulses defines the time when the switch is turned on. The minimum time when the switch is turned on equals to a few microseconds, while the maximum time is not limited. This paper shows the test results of 4 kV switch prototype. The switch was used to produce rectangular pulses of a microsecond range under resistive load. The possibility to generate the damped harmonic oscillations was also tested. On the basis of this approach, positive testing results open up a possibility to design switches under an operating voltage of tens kilovolts.

Reducing Ripple In A Switching Voltage Regulator

NASA Technical Reports Server (NTRS)

Paulkovich, John; Rodriguez, G. Ernest

1994-01-01

Ripple voltage in output of switching voltage regulator reduced substantially by simple additional circuitry adding little to overall weight and size of regulator. Heretofore, additional filtering circuitry needed to obtain comparable reductions in ripple typically as large and heavy as original regulator. Current opposing ripple current injected into filter capacitor.

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

NASA Astrophysics Data System (ADS)

Kurebayashi, Daichi; Nomura, Kentaro

2016-10-01

We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

Voltage equaliser for Li-Fe battery

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Chuang, Ping-Hao

2013-10-01

In this article, a voltage equaliser is proposed for a battery string with four Li-Fe batteries. The proposed voltage equaliser is developed from a flyback converter, which comprises a transformer, a power electronic switch and a resonant clamped circuit. The transformer contains a primary winding and four secondary windings with the same number of turns connected to each battery. The resonant clamped circuit is for recycling the energy of leakage inductance of the transformer and for performing zero-voltage switching (ZVS) of the power electronic switch. When the power electronic switch is switched on, the energy is stored in the transformer; and when the power electronic switch is switched off, the energy stored in the transformer will automatically charge the battery whose voltage is the lowest. In this way, the voltage of individual batteries in the battery string is balanced. The salient features of the proposed voltage equaliser are that only one switch is used, the energy stored in the leakage inductance of the transformer can be recycled and ZVS is obtained. A prototype is developed and tested to verify the performance of the proposed voltage equaliser. The experimental results show that the proposed voltage equaliser achieves the expected performance.

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

DOE Office of Scientific and Technical Information (OSTI.GOV)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of themore » one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.« less

High voltage MOSFET switching circuit

DOEpatents

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

High voltage MOSFET switching circuit

DOEpatents

McEwan, T.E.

1994-07-26

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

Voltage controlled Bi-mode resistive switching effects in MnO2 based devices

NASA Astrophysics Data System (ADS)

Hu, P.; Wu, S. X.; Wang, G. L.; Li, H. W.; Li, D.; Li, S. W.

2018-01-01

In this paper, the voltage induced bi-mode resistive switching behavior of an MnO2 thin film based device was studied. The device showed prominent bipolar resistive switching behavior with good reproducibility and high endurance. In addition, complementary resistive switching characteristics can be observed by extending the voltage bias during voltage sweep operations. The electrical measurement data and fitting results indicate that the oxygen vacancies act as defects to form a conductive path, which is connective or disrupted to realize a low resistive state or a high resistive state. Changing the sweep voltage can tune the oxygen vacancies distribution, which will achieve complementary resistive switching.

A multi-functional high voltage experiment apparatus for vacuum surface flashover switch research.

PubMed

Zeng, Bo; Su, Jian-cang; Cheng, Jie; Wu, Xiao-long; Li, Rui; Zhao, Liang; Fang, Jin-peng; Wang, Li-min

2015-04-01

A multifunctional high voltage apparatus for experimental researches on surface flashover switch and high voltage insulation in vacuum has been developed. The apparatus is composed of five parts: pulse generating unit, axial field unit, radial field unit, and two switch units. Microsecond damped ringing pulse with peak-to-peak voltage 800 kV or unipolar pulse with maximum voltage 830 kV is generated, forming transient axial or radial electrical field. Different pulse waveforms and field distributions make up six experimental configurations in all. Based on this apparatus, preliminary experiments on vacuum surface flashover switch with different flashover dielectric materials have been conducted in the axial field unit, and nanosecond pulse is generated in the radial field unit which makes a pulse transmission line in the experiment. Basic work parameters of this kind of switch such as lifetime, breakdown voltage are obtained.

Impact analysis of tap switch out of step for converter transformer

NASA Astrophysics Data System (ADS)

Hong-yue, ZHANG; Zhen-hua, ZHANG; Zhang-xue, XIONG; Gao-wang, YU

2017-06-01

AC transformer load regulation is mainly used to adjust the load side voltage level, improve the quality of power supply, the voltage range is relatively narrow. In DC system, converter transformer is the core equipment of AC and DC power converter and inverter. converter transformer tap adjustment can maintain the normal operation of the converter in small angle range control, the absorption of reactive power, economic operation, valve less stress, valve damping circuit loss, AC / DC harmonic component is also smaller. In this way, the tap switch action is more frequent, and a large range of the tap switch adjustment is required. Converter transformer with a more load voltage regulation switch, the voltage regulation range of the switch is generally 20~30%, the adjustment of each file is 1%~2%. Recently it is often found that the tap switch of Converter Transformers is out of step in Converter station. In this paper, it is analyzed in detail the impact of tap switch out of step for differential protection, overexcitation protection and zero sequence over current protection. Analysis results show that: the tap switch out of step has no effect on the differential protection and the overexcitation protection including the tap switch. But the tap switch out of step has effect on zero sequence overcurrent protection of out of step star-angle converter transformer. The zero sequence overcurrent protection will trip when the tap switch out of step is greater than 3 for out of step star-angle converter transformer.

High voltage switch triggered by a laser-photocathode subsystem

DOEpatents

Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

2013-01-08

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1996-10-15

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1996-01-01

A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Gas tube-switched high voltage DC power converter

DOEpatents

She, Xu; Bray, James William; Sommerer, Timothy John; Chokhawala, Rahul

2018-05-15

A direct current (DC)-DC converter includes a transformer and a gas tube-switched inverter circuit. The transformer includes a primary winding and a secondary winding. The gas tube-switched inverter circuit includes first and second inverter load terminals and first and second inverter input terminals. The first and second inverter load terminals are coupled to the primary winding. The first and second inverter input terminals are couplable to a DC node. The gas tube-switched inverter circuit further includes a plurality of gas tube switches respectively coupled between the first and second inverter load terminals and the first and second inverter input terminals. The plurality of gas tube switches is configured to operate to generate an alternating current (AC) voltage at the primary winding.

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

Modeling of switching regulator power stages with and without zero-inductor-current dwell time

NASA Technical Reports Server (NTRS)

Lee, F. C. Y.; Yu, Y.

1979-01-01

State-space techniques are employed to derive accurate models for the three basic switching converter power stages: buck, boost, and buck/boost operating with and without zero-inductor-current dwell time. A generalized procedure is developed which treats the continuous-inductor-current mode without dwell time as a special case of the discontinuous-current mode when the dwell time vanishes. Abrupt changes of system behavior, including a reduction of the system order when the dwell time appears, are shown both analytically and experimentally. Merits resulting from the present modeling technique in comparison with existing modeling techniques are illustrated.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch.

PubMed

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF 6 /N 2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF 6 /N 2 mixture ratio on switch performance was explored. The experimental results show that when the SF 6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

Ultralow-voltage design of graphene PN junction quantum reflective switch transistor

NASA Astrophysics Data System (ADS)

Sohier, Thibault; Yu, Bin

2011-05-01

We propose the concept of a graphene-based quantum reflective switch (QRS) for low-power logic application. With the unique electronic properties of graphene, a tilted PN junction is used to implement logic switch function with 103 ON/OFF ratio. Carriers are reflected on an electrostatically induced potential step with strong incidence-angle-dependency due to the widening of classically forbidden energies. Optimized design of the device for ultralow-voltage operating has been conducted. The device is constantly ON with a turning-off gate voltage around 180 mV using thin HfO2 as the gate dielectric. The results suggest a class of logic switch devices operating with micropower dissipation.

Compensation of voltage drops in solid-state switches used with thermoelectric generators

NASA Technical Reports Server (NTRS)

Shimada, K.

1972-01-01

Seebeck effect solid state switch was developed eliminating thermoelectric generator switch voltage drops. Semiconductor switches were fabricated from materials with large Seebeck coefficients, arranged such that Seebeck potential is generated with such polarity that current flow is aided.

Novel switching method for single-phase NPC three-level inverter with neutral-point voltage control

NASA Astrophysics Data System (ADS)

Lee, June-Seok; Lee, Seung-Joo; Lee, Kyo-Beum

2018-02-01

This paper proposes a novel switching method with the neutral-point voltage control in a single-phase neutral-point-clamped three-level inverter (SP-NPCI) used in photovoltaic systems. A proposed novel switching method for the SP-NPCI improves the efficiency. The main concept is to fix the switching state of one leg. As a result, the switching loss decreases and the total efficiency is improved. In addition, it enables the maximum power-point-tracking operation to be performed by applying the proposed neutral-point voltage control algorithm. This control is implemented by modifying the reference signal. Simulation and experimental results provide verification of the performance of a novel switching method with the neutral-point voltage control.

Voltage switching of a VO{sub 2} memory metasurface using ionic gel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldflam, M. D.; Liu, M. K.; Chapler, B. C.

2014-07-28

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarilymore » from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.« less

Metal vapor arc switch electromagnetic accelerator technology

NASA Technical Reports Server (NTRS)

Mongeau, P. P.

1984-01-01

A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

Voltage-Controlled Switching and Thermal Effects in VO2 Nano-Gap Junctions

DTIC Science & Technology

2014-06-09

Voltage-controlled switching and thermal effects in VO2 nano-gap junctions Arash Joushaghani,1 Junho Jeong,1 Suzanne Paradis,2 David Alain,2 J...2014) Voltage-controlled switching in lateral VO2 nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of...indicate that the VO2 phase transition was likely initiated electroni- cally, which was sometimes followed by a secondary thermally-induced transition

Performance analysis of cascaded h-bridge multilevel inverter using mixed switching frequency with various dc-link voltages

NASA Astrophysics Data System (ADS)

Citarsa, I. B. F.; Satiawan, I. N. W.; Wiryajati, I. K.; Supriono

2016-01-01

Multilevel inverters have been widely used in many applications since the technology is advantageous to increase the converter capability as well as to improve the output voltage quality. According to the applied switching frequency, multilevel modulations can be subdivided into three classes, i.e: fundamental switching frequency, high switching frequency and mixed switching frequency. This paper investigates the performance of cascaded H-bridge (CHB) multilevel inverter that is modulated using mixed switching frequency (MSF) PWM with various dc-link voltage ratios. The simulation results show the nearly sinusoidal load output voltages are successfully achieved. It is revealed that there is improvement in output voltages quality in terms of THD and low-order harmonics content. The CHB inverter that is modulated using MSF PWM with equal dc-link voltage ratio (½ Vdc: ½ Vdc) produces output voltage with the lowest low-order harmonics (less than 1% of fundamental) while the CHB inverter that is modulated using MSF PWM with un-equal dc-link voltage ratio (2/3 Vdc: 1/3 Vdc) produces a 7-level output voltage with the lowest THD (16.31%) compared to the other PWM methods. Improvement of the output voltage quality here is also in line with improvement of the number of available levels provided in the output voltage. Here only 2 cells H-bridge inverter (contain 8 switches) are needed to produce a 7- level output voltage, while in the conventional CHB inverter at least 3 cells of H-bridge inverter (contain 12 switches) are needed to produce a 7-level output voltage. Hence it is valuable in term of saving number of component.

Optical zero-differential pressure switch and its evaluation in a multiple pressure measuring system

NASA Technical Reports Server (NTRS)

Powell, J. A.

1977-01-01

The design of a clamped-diaphragm pressure switch is described in which diaphragm motion is detected by a simple fiber-optic displacement sensor. The switch was evaluated in a pressure measurement system where it detected the zero crossing of the differential pressure between a static test pressure and a tank pressure that was periodically ramped from near zero to fullscale gage pressure. With a ramping frequency of 1 hertz and a full-scale tank pressure of 69 N/sq cm gage (100 psig), the switch delay was as long as 2 milliseconds. Pressure measurement accuracies were 0.25 to 0.75 percent of full scale. Factors affecting switch performance are also discussed.

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

NASA Astrophysics Data System (ADS)

Li, Peng; You, Zheng; Cui, Tianhong

2012-12-01

An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Design and Development of a Series Switch for High Voltage in RF Heating

NASA Astrophysics Data System (ADS)

Patel, Himanshu K.; Shah, Deep; Thacker, Mauli; Shah, Atman

2013-02-01

Plasma is the fourth state of matter. To sustain plasma in its ionic form very high temperature is essential. RF heating systems are used to provide the required temperature. Arching phenomenon in these systems can cause enormous damage to the RF tube. Heavy current flows across the anode-cathode junction, which need to be suppressed in minimal time for its protection. Fast-switching circuit breakers are used to cut-off the load from the supply in cases of arching. The crowbar interrupts the connection between the high voltage power supply (HVPS) and the RF tube for a temporary period between which the series switch has to open. The crowbar shunts the current across the load but in the process leads to short circuiting the HVPS. Thus, to protect the load as well as the HVPS a series switch is necessary. This paper presents the design and development of high voltage Series Switch for the high power switching applications. Fiber optic based Optimum triggering scheme is designed and tested to restrict the time delay well within the stipulated limits. The design is well supported with the experimental results for the whole set-up along with the series switch at various voltage level before its approval for operation at 5.2 kV.

Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors.

PubMed

Molinari, Alan; Hahn, Horst; Kruk, Robert

2018-01-01

The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La 0.74 Sr 0.26 MnO 3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V -1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm -2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reference voltage calculation method based on zero-sequence component optimisation for a regional compensation DVR

NASA Astrophysics Data System (ADS)

Jian, Le; Cao, Wang; Jintao, Yang; Yinge, Wang

2018-04-01

This paper describes the design of a dynamic voltage restorer (DVR) that can simultaneously protect several sensitive loads from voltage sags in a region of an MV distribution network. A novel reference voltage calculation method based on zero-sequence voltage optimisation is proposed for this DVR to optimise cost-effectiveness in compensation of voltage sags with different characteristics in an ungrounded neutral system. Based on a detailed analysis of the characteristics of voltage sags caused by different types of faults and the effect of the wiring mode of the transformer on these characteristics, the optimisation target of the reference voltage calculation is presented with several constraints. The reference voltages under all types of voltage sags are calculated by optimising the zero-sequence component, which can reduce the degree of swell in the phase-to-ground voltage after compensation to the maximum extent and can improve the symmetry degree of the output voltages of the DVR, thereby effectively increasing the compensation ability. The validity and effectiveness of the proposed method are verified by simulation and experimental results.

Zero voltage mass spectrometry probes and systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cooks, Robert Graham; Wleklinski, Michael Stanley; Bag, Soumabha

The invention generally relates to zero volt mass spectrometry probes and systems. In certain embodiments, the invention provides a system including a mass spectrometry probe including a porous material, and a mass spectrometer (bench-top or miniature mass spectrometer). The system operates without an application of voltage to the probe. In certain embodiments, the probe is oriented such that a distal end faces an inlet of the mass spectrometer. In other embodiments, the distal end of the probe is 5 mm or less from an inlet of the mass spectrometer.

Synchronous Controlled Switching by VCB with Electromagnetic Operation Mechanism

NASA Astrophysics Data System (ADS)

Horinouchi, Katsuhiko; Tsukima, Mitsuru; Tohya, Nobumoto; Inoue, Ryuuichi; Sasao, Hiroyuki

Synchronously controlled switching to suppress transient overvoltage and overcurrent resulting from when the circuit breakers on medium voltage systems are closed is described. Firstly, by simulation it is found that if the closing time is synchronously controlled so that the contacts of the circuit breaker close completely at the instant when the voltage across contacts of the breaker at each of the three individual phases are zero, the resulting overvoltage and overcurrent is significantly suppressed when compared to conventional three phase simultaneous closing. Next, an algorithm for determining the closing timing based on a forecasted voltage zero waveform, obtained from voltage sampling data, is presented. Finally, a synchronous closing experiment of voltage 22kV utilizing a controller to implement the algorithm and a VCB with an electromagnetic operation mechanism is presented. The VCB was successfully closed at the zero point within a tolerance range of 200 microseconds.

State Recognition of High Voltage Isolation Switch Based on Background Difference and Iterative Search

NASA Astrophysics Data System (ADS)

Xu, Jiayuan; Yu, Chengtao; Bo, Bin; Xue, Yu; Xu, Changfu; Chaminda, P. R. Dushantha; Hu, Chengbo; Peng, Kai

2018-03-01

The automatic recognition of the high voltage isolation switch by remote video monitoring is an effective means to ensure the safety of the personnel and the equipment. The existing methods mainly include two ways: improving monitoring accuracy and adopting target detection technology through equipment transformation. Such a method is often applied to specific scenarios, with limited application scope and high cost. To solve this problem, a high voltage isolation switch state recognition method based on background difference and iterative search is proposed in this paper. The initial position of the switch is detected in real time through the background difference method. When the switch starts to open and close, the target tracking algorithm is used to track the motion trajectory of the switch. The opening and closing state of the switch is determined according to the angle variation of the switch tracking point and the center line. The effectiveness of the method is verified by experiments on different switched video frames of switching states. Compared with the traditional methods, this method is more robust and effective.

HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

DOEpatents

Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

1962-04-17

A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

Allosteric substrate switching in a voltage-sensing lipid phosphatase.

PubMed

Grimm, Sasha S; Isacoff, Ehud Y

2016-04-01

Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We found that the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), has not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage-sensing domain (VSD). Using fast fluorescence resonance energy transfer (FRET) reporters of PIPs to monitor enzyme activity and voltage-clamp fluorometry to monitor conformational changes in the VSD, we found that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage-sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This two-step allosteric control over a dual-specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility, endocytosis and exocytosis.

Allosteric substrate switching in a voltage sensing lipid phosphatase

PubMed Central

Grimm, Sasha S.; Isacoff, Ehud Y.

2016-01-01

Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We find the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), to have not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage sensing domain (VSD). Using fast FRET reporters of PIPs to monitor enzyme activity and voltage clamp fluorometry to monitor conformational changes in the VSD, we find that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This novel 2-step allosteric control over a dual specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility and endo/exocytosis. PMID:26878552

An 1.4 ppm/°C bandgap voltage reference with automatic curvature-compensation technique

NASA Astrophysics Data System (ADS)

Zhou, Zekun; Yu, Hongming; Shi, Yue; Zhang, Bo

2017-12-01

A high-precision Bandgap voltage reference (BGR) with a novel curvature-compensation scheme is proposed in this paper. The temperature coefficient (TC) can be automatically optimized with a built-in adaptive curvature-compensation technique, which is realized in a digitization control way. Firstly, an exponential curvature compensation method is adopted to reduce the TC in a certain degree, especially in low temperature range. Then, the temperature drift of BGR in higher temperature range can be further minimized by dynamic zero-temperature-coefficient point tracking with temperature changes. With the help of proposed adaptive signal processing, the output voltage of BGR can approximately maintain zero TC in a wider temperature range. Experiment results of the BGR proposed in this paper, which is implemented in 0.35-μm BCD process, illustrate that the TC of 1.4ppm/°C is realized under the power supply voltage of 3.6V and the power supply rejection of the proposed circuit is -67dB.

A Double-Pole High Voltage High Current Switch

DTIC Science & Technology

2005-12-01

NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited A DOUBLE- POLE HIGH...December 2005 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE: A Double- Pole High Voltage High Current Switch 6. AUTHOR(S...to divert heavy charged particles, e.g. Cu+. 15. NUMBER OF PAGES 68 14. SUBJECT TERMS Double- Pole , Pulse Forming Inductive Network, PFIN

A high-voltage supply used on miniaturized RLG

NASA Astrophysics Data System (ADS)

Miao, Zhifei; Fan, Mingming; Wang, Yuepeng; Yin, Yan; Wang, Dongmei

2016-01-01

A high voltage power supply used in laser gyro is proposed in this paper. The power supply which uses a single DC 15v input and fly-back topology is adopted in the main circuit. The output of the power supply achieve high to 3.3kv voltage in order to light the RLG. The PFM control method is adopted to realize the rapid switching between the high voltage state and the maintain state. The resonant chip L6565 is used to achieve the zero voltage switching(ZVS), so the consumption is reduced and the power efficiency is improved more than 80%. A special circuit is presented in the control portion to ensure symmetry of the two RLG's arms current. The measured current accuracy is higher than 5‰ and the current symmetry of the two RLG's arms up to 99.2%.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, William Newell; Thomas, Robert James

1999-01-01

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

NASA Technical Reports Server (NTRS)

Binkley, David M.; Verma, Nikhil; Crawford, Robert L.; Brandon, Erik; Jackson, Thomas N.

2004-01-01

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1997-03-11

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

Tunneling Nanoelectromechanical Switches Based on Compressible Molecular Thin Films.

PubMed

Niroui, Farnaz; Wang, Annie I; Sletten, Ellen M; Song, Yi; Kong, Jing; Yablonovitch, Eli; Swager, Timothy M; Lang, Jeffrey H; Bulović, Vladimir

2015-08-25

Abrupt switching behavior and near-zero leakage current of nanoelectromechanical (NEM) switches are advantageous properties through which NEMs can outperform conventional semiconductor electrical switches. To date, however, typical NEMs structures require high actuation voltages and can prematurely fail through permanent adhesion (defined as stiction) of device components. To overcome these challenges, in the present work we propose a NEM switch, termed a "squitch," which is designed to electromechanically modulate the tunneling current through a nanometer-scale gap defined by an organic molecular film sandwiched between two electrodes. When voltage is applied across the electrodes, the generated electrostatic force compresses the sandwiched molecular layer, thereby reducing the tunneling gap and causing an exponential increase in the current through the device. The presence of the molecular layer avoids direct contact of the electrodes during the switching process. Furthermore, as the layer is compressed, the increasing surface adhesion forces are balanced by the elastic restoring force of the deformed molecules which can promote zero net stiction and recoverable switching. Through numerical analysis, we demonstrate the potential of optimizing squitch design to enable large on-off ratios beyond 6 orders of magnitude with operation in the sub-1 V regime and with nanoseconds switching times. Our preliminary experimental results based on metal-molecule-graphene devices suggest the feasibility of the proposed tunneling switching mechanism. With optimization of device design and material engineering, squitches can give rise to a broad range of low-power electronic applications.

The simulation on diode-clamped five-level converters common-mode voltage suppression with zero-vector PWM strategy

NASA Astrophysics Data System (ADS)

Zhang, Yonggao; Gao, Yanli; Long, Lizhong

2012-04-01

More and more researchers have great concern on the issue of Common-mode voltage (CMV) in high voltage large power converter. A novel common-mode voltage suppression scheme based on zero-vector PWM strategy (ZVPWM) is present in this paper. Taking a diode-clamped five-level converter as example, the principle of zero vector PWM common-mode voltage (ZCMVPWM) suppression method is studied in detail. ZCMVPWM suppression strategy is including four important parts, which are locating the sector of reference voltage vector, locating the small triangular sub-sector of reference voltage vector, reference vector synthesis, and calculating the operating time of vector. The principles of four important pars are illustrated in detail and the corresponding MATLAB models are established. System simulation and experimental results are provided. It gives some consultation value for the development and research of multi-level converters.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, W.N.; Thomas, R.J.

1999-08-31

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast. 4 figs.

Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Otsuka, Shintaro; Takeda, Ryouta; Furuya, Saeko; Shimizu, Tomohiro; Shingubara, Shouso; Iwata, Nobuyuki; Watanabe, Tadataka; Takano, Yoshiki; Takase, Kouichi

2012-06-01

We have investigated the current-voltage characteristics of a resistive switching memory (ReRAM), especially the reproducibility of the switching voltage between an insulating state and a metallic state. The poor reproducibility hinders the practical use of this memory. According to a filament model, the variation of the switching voltage may be understood in terms of the random choice of filaments with different conductivities and lengths at each switching. A limitation of the number of conductive paths is expected to lead to the suppression of the variation of switching voltage. In this study, two strategies for the limitation have been proposed using an anodic porous alumina (APA). The first is the reduction of the number of conductive paths by restriction of the contact area between the top electrodes and the insulator. The second is the lowering of the resistivity of the insulator, which makes it possible to grow filaments with the same characteristics by electrochemical treatments using a pulse-electroplating technique.

A soft-switching coupled inductor bidirectional DC-DC converter with high-conversion ratio

NASA Astrophysics Data System (ADS)

Chao, Kuei-Hsiang; Jheng, Yi-Cing

2018-01-01

A soft-switching bidirectional DC-DC converter is presented herein as a way to improve the conversion efficiency of a photovoltaic (PV) system. Adoption of coupled inductors enables the presented converter not only to provide a high-conversion ratio but also to suppress the transient surge voltage via the release of the energy stored in leakage flux of the coupled inductors, and the cost can kept down consequently. A combined use of a switching mechanism and an auxiliary resonant branch enables the converter to successfully perform zero-voltage switching operations on the main switches and improves the efficiency accordingly. It was testified by experiments that our proposed converter works relatively efficiently in full-load working range. Additionally, the framework of the converter intended for testifying has high-conversion ratio. The results of a test, where a generating system using PV module array coupled with batteries as energy storage device was used as the low-voltage input side, and DC link was used as high-voltage side, demonstrated our proposed converter framework with high-conversion ratio on both high-voltage and low-voltage sides.

A Compact, Soft-Switching DC-DC Converter for Electric Propulsion

NASA Technical Reports Server (NTRS)

Button, Robert; Redilla, Jack; Ayyanar, Raja

2003-01-01

A hybrid, soft-switching, DC-DC converter has been developed with superior soft switching characteristics, high efficiency, and low electro-magnetic interference. This hybrid topology is comprised of an uncontrolled bridge operating at full pulse-width, and a controlled section operating as a conventional phase modulated converter. The unique topology is able to maintain zero voltage switching down to no load operating conditions. A breadboard prototype was developed and tested to demonstrate the benefits of the topology. Improvements were then made to reduce the size of passive components and increase efficiency in preparation for packaging. A packaged prototype was then designed and built, and several innovative packaging techniques are presented. Performance test data is presented that reveals deficiencies in the design of the power transformer. A simple redesign of the transformer windings eliminated the deficiency. Future plans to improve the converter and packaging design are presented along with several conclusions.

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching

ERIC Educational Resources Information Center

Masrur, M. A.

2009-01-01

This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

Prognostic health monitoring in switch-mode power supplies with voltage regulation

NASA Technical Reports Server (NTRS)

Hofmeister, James P (Inventor); Judkins, Justin B (Inventor)

2009-01-01

The system includes a current injection device in electrical communication with the switch mode power supply. The current injection device is positioned to alter the initial, non-zero load current when activated. A prognostic control is in communication with the current injection device, controlling activation of the current injection device. A frequency detector is positioned to receive an output signal from the switch mode power supply and is able to count cycles in a sinusoidal wave within the output signal. An output device is in communication with the frequency detector. The output device outputs a result of the counted cycles, which are indicative of damage to an a remaining useful life of the switch mode power supply.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

PubMed

Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

2018-04-01

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

NASA Astrophysics Data System (ADS)

Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

2017-12-01

The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

NASA Technical Reports Server (NTRS)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

On the transient dynamics of piezoelectric-based, state-switched systems

NASA Astrophysics Data System (ADS)

Lopp, Garrett K.; Kelley, Christopher R.; Kauffman, Jeffrey L.

2018-01-01

This letter reports on the induced mechanical transients for piezoelectric-based, state-switching approaches utilizing both experimental tests and a numerical model that more accurately captures the dynamics associated with a switch between stiffness states. Currently, switching models instantaneously dissipate the stored piezoelectric voltage, resulting in a discrete change in effective stiffness states and a discontinuity in the system dynamics during the switching event. The proposed model allows for a rapid but continuous voltage dissipation and the corresponding variation between stiffness states, as one sees in physical implementations. This rapid variation in system stiffness when switching at a point of non-zero strain leads to high-frequency, large-amplitude transients in the system acceleration response. Utilizing a fundamental piezoelectric bimorph, a comparison between the numerical and experimental results reveals that these mechanical transients are much stronger than originally anticipated and masked by measurement hardware limitations, thus highlighting the significance of an appropriate system model governing the switch dynamics. Such a model enables designers to analyze systems that incorporate piezoelectric-based state switching with greater accuracy to ensure that these transients do not degrade the intended performance. Finally, if the switching does create unacceptable transients, controlling the duration of voltage dissipation enables control over the frequency content and peak amplitudes associated with the switch-induced acceleration transients.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

NASA Astrophysics Data System (ADS)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-01-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

NASA Astrophysics Data System (ADS)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-06-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

NASA Astrophysics Data System (ADS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-04-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Transparent electrode for optical switch

DOEpatents

Goldhar, J.; Henesian, M.A.

1984-10-19

The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

Voltage-controlled magnetization switching in MRAMs in conjunction with spin-transfer torque and applied magnetic field

NASA Astrophysics Data System (ADS)

Munira, Kamaram; Pandey, Sumeet C.; Kula, Witold; Sandhu, Gurtej S.

2016-11-01

Voltage-controlled magnetic anisotropy (VCMA) effect has attracted a significant amount of attention in recent years because of its low cell power consumption during the anisotropy modulation of a thin ferromagnetic film. However, the applied voltage or electric field alone is not enough to completely and reliably reverse the magnetization of the free layer of a magnetic random access memory (MRAM) cell from anti-parallel to parallel configuration or vice versa. An additional symmetry-breaking mechanism needs to be employed to ensure the deterministic writing process. Combinations of voltage-controlled magnetic anisotropy together with spin-transfer torque (STT) and with an applied magnetic field (Happ) were evaluated for switching reliability, time taken to switch with low error rate, and energy consumption during the switching process. In order to get a low write error rate in the MRAM cell with VCMA switching mechanism, a spin-transfer torque current or an applied magnetic field comparable to the critical current and field of the free layer is necessary. In the hybrid processes, the VCMA effect lowers the duration during which the higher power hungry secondary mechanism is in place. Therefore, the total energy consumed during the hybrid writing processes, VCMA + STT or VCMA + Happ, is less than the energy consumed during pure spin-transfer torque or applied magnetic field switching.

Investigation of high-voltage pulse trigger generator based on photo-conductive semiconductor switch

NASA Astrophysics Data System (ADS)

Chu, Xu; Liu, Jin-Liang; Wang, Lang-Ning; Qiu, Yong-Feng

2018-06-01

The trigger to generate high-voltage pulse is one of the most important parts in a pulsed-power system, especially for the conduction characteristics of the main switch. However, traditional triggers usually have the drawbacks of large structure and worse long-term working stability, which goes against the demands of pulsed-power system miniaturization and stability. In the paper, a pulse trigger using photo-conductive semiconductor switch was developed, which is of small size, stable performance and steep leading edge of the output pulse rise. It is found that the output trigger pulse rise time is 14 ns, and the jitter of 20 shots is 330 ps. Applying the designed pulsed trigger in a field distortion switch and a triggered vacuum switch, experiments show that the switches could be triggered stably with reduced jitter.

Switch wear leveling

DOEpatents

Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

2015-09-01

An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

Dual-bridge LLC-SRC with extended voltage range for deeply depleted PEV battery charging

NASA Astrophysics Data System (ADS)

Shahzad, M. Imran; Iqbal, Shahid; Taib, Soib

2017-11-01

This paper proposes a dual-bridge LLC series resonant converter with hybrid-rectifier for achieving extended charging voltage range of 50-420 V for on-board battery charger of plug-in electric vehicle for normal and deeply depleted battery charging. Depending upon the configuration of primary switching network and secondary rectifier, the proposed topology has three operating modes as half-bridge with bridge rectifier (HBBR), full-bridge with bridge rectifier (FBBR) and full-bridge with voltage doubler (FBVD). HBBR, FBBR and FBVD operating modes of converter achieve 50-125, 125-250 and 250-420 V voltage ranges, respectively. For voltage above 62 V, the converter operates below resonance frequency zero voltage switching region with narrow switching frequency range for soft commutation of secondary diodes and low turn-off current of MOSFETs to reduce switching losses. The proposed converter is simulated using MATLAB Simulink and a 1.5 kW laboratory prototype is also built to validate the operation of proposed topology. Simulation and experimental results show that the converter meets all the charging requirements for deeply depleted to fully charged battery using constant current-constant voltage charging method with fixed 400 V DC input and achieves 96.22% peak efficiency.

A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator

NASA Astrophysics Data System (ADS)

Park, Jae-Hyoung; Lee, Hee-Chul; Park, Yong-Hee; Kim, Yong-Dae; Ji, Chang-Hyeon; Bu, Jonguk; Nam, Hyo-Jin

2006-11-01

In this paper, a fully wafer-level packaged RF MEMS switch has been demonstrated, which has low operation voltage, using a piezoelectric actuator. The piezoelectric actuator was designed to operate at low actuation voltage for application to advanced mobile handsets. The dc contact type RF switch was packaged using the wafer-level bonding process. The CPW transmission lines and piezoelectric actuators have been fabricated on separate wafers and assembled together by the wafer-level eutectic bonding process. A gold and tin composite was used for eutectic bonding at a low temperature of 300 °C. Via holes interconnecting the electrical contact pads through the wafer were filled completely with electroplated copper. The fully wafer-level packaged RF MEMS switch showed an insertion loss of 0.63 dB and an isolation of 26.4 dB at 5 GHz. The actuation voltage of the switch was 5 V. The resonant frequency of the piezoelectric actuator was 38.4 kHz and the spring constant of the actuator was calculated to be 9.6 N m-1. The size of the packaged SPST (single-pole single-through) switch was 1.2 mm × 1.2 mm including the packaging sealing rim. The effect of the proposed package structure on the RF performance was characterized with a device having CPW through lines and vertical feed lines excluding the RF switches. The measured packaging loss was 0.2 dB and the return loss was 33.6 dB at 5 GHz.

Pulse switching for high energy lasers

NASA Technical Reports Server (NTRS)

Laudenslager, J. B.; Pacala, T. J. (Inventor)

1981-01-01

A saturable inductor switch for compressing the width and sharpening the rise time of high voltage pulses from a relatively slow rise time, high voltage generator to an electric discharge gas laser (EDGL) also provides a capability for efficient energy transfer from a high impedance primary source to an intermediate low impedance laser discharge network. The switch is positioned with respect to a capacitive storage device, such as a coaxial cable, so that when a charge build-up in the storage device reaches a predetermined level, saturation of the switch inductor releases or switches energy stored in the capactive storage device to the EDGL. Cascaded saturable inductor switches for providing output pulses having rise times of less than ten nanoseconds and a technique for magnetically biasing the saturable inductor switch are disclosed.

FPGA Techniques Based New Hybrid Modulation Strategies for Voltage Source Inverters

PubMed Central

Sudha, L. U.; Baskaran, J.; Elankurisil, S. A.

2015-01-01

This paper corroborates three different hybrid modulation strategies suitable for single-phase voltage source inverter. The proposed method is formulated using fundamental switching and carrier based pulse width modulation methods. The main tale of this proposed method is to optimize a specific performance criterion, such as minimization of the total harmonic distortion (THD), lower order harmonics, switching losses, and heat losses. The proposed method is articulated using fundamental switching and carrier based pulse width modulation methods. Thus, the harmonic pollution in the power system will be reduced and the power quality will be augmented with better harmonic profile for a target fundamental output voltage. The proposed modulation strategies are simulated in MATLAB r2010a and implemented in a Xilinx spartan 3E-500 FG 320 FPGA processor. The feasibility of these modulation strategies is authenticated through simulation and experimental results. PMID:25821852

Influence of barrier on partial discharge activity by a conducting particle in liquid nitrogen under AC voltages adopting UHF technique

NASA Astrophysics Data System (ADS)

Sarathi, R.; Giridhar, A. V.; Sethupathi, K.

2011-02-01

The UHF signals are generated due to PD formed by particle movement in liquid nitrogen under AC voltages. The levitation voltage of a particle in liquid nitrogen measured through UHF technique and by conventional PD measurement technique is the same, confirming the sensitivity of UHF technique for identification of PD activity. The frequency content of UHF signal generated due to particle movement in liquid nitrogen, under AC voltages, lies in the range 0.5-1.5 GHz. The characteristics of UHF signal generated due to particle movement between the barrier and high voltage/ground electrode is much similar to the signal generated by particle movement in clean electrode gap. Pseudo resonance phenomena can occur in liquid nitrogen due to particle movement. It is also observed that the partial discharge magnitude, in general, be high when the particle moves between the barrier and high voltage electrode when compared to the barrier and the ground electrode. Percentage of clay in epoxy nanocomposites has not altered the levitation voltage of the particle in the electrode gap. Zero span analysis clearly indicates that pseudo resonance occurs when particle moves (in a short gap) between the barrier and high voltage/ground electrode.

Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

NASA Astrophysics Data System (ADS)

Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo

Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.

Determination of appropriate DC voltage for switched mode power supply (SMPS) loads

NASA Astrophysics Data System (ADS)

Setiawan, Eko Adhi; Setiawan, Aiman; Purnomo, Andri; Djamal, Muchlishah Hadi

2017-03-01

Nowadays, most of modern and efficient household electronic devices operated based on Switched Mode Power Supply (SMPS) technology which convert AC voltage from the grid to DC voltage. Based on theory and experiment, SMPS loads could be supplied by DC voltage. However, the DC voltage rating to energize electronic home appliances is not standardized yet. This paper proposed certain method to determine appropriate DC voltage, and investigated comparison of SMPS power consumption which is supplied from AC and DC voltage. To determine the appropriate DC voltage, lux value of several lamps which have same specification energized by using AC voltage and the results is using as reference. Then, the lamps were supplied by various DC voltage to obtain the trends of the lux value to the applied DC voltage. After that, by using the trends and the reference lux value, the appropriate DC voltage can be determined. Furthermore, the power consumption on home appliances such as mobile phone, laptop and personal computer by using AC voltage and the appropriate DC voltage were conducted. The results show that the total power consumption of AC system is higher than DC system. The total power (apparent power) consumed by the lamp, mobile phone and personal computer which operated in 220 VAC were 6.93 VA, 34.31 VA and 105.85 VA respectively. On the other hand, under 277 VDC the load consumption were 5.83 W, 19.11 W and 74.46 W respectively.

Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

PubMed

Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

2013-02-01

For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

NASA Astrophysics Data System (ADS)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system.

PubMed

Jiang, J; Ma, G M; Luo, D P; Li, C R; Li, Q M; Wang, W

2014-02-01

Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system.

A High Efficiency Boost Converter with MPPT Scheme for Low Voltage Thermoelectric Energy Harvesting

NASA Astrophysics Data System (ADS)

Guan, Mingjie; Wang, Kunpeng; Zhu, Qingyuan; Liao, Wei-Hsin

2016-11-01

Using thermoelectric elements to harvest energy from heat has been of great interest during the last decade. This paper presents a direct current-direct current (DC-DC) boost converter with a maximum power point tracking (MPPT) scheme for low input voltage thermoelectric energy harvesting applications. Zero current switch technique is applied in the proposed MPPT scheme. Theoretical analysis on the converter circuits is explored to derive the equations for parameters needed in the design of the boost converter. Simulations and experiments are carried out to verify the theoretical analysis and equations. A prototype of the designed converter is built using discrete components and a low-power microcontroller. The results show that the designed converter can achieve a high efficiency at low input voltage. The experimental efficiency of the designed converter is compared with a commercial converter solution. It is shown that the designed converter has a higher efficiency than the commercial solution in the considered voltage range.

A 10 kW dc-dc converter using IGBTs with active snubbers. [Insulated Gate Bipolar Transistor

NASA Technical Reports Server (NTRS)

Masserant, Brian J.; Shriver, Jeffrey L.; Stuart, Thomas A.

1993-01-01

This full bridge dc-dc converter employs zero voltage switching (ZVS) on one leg and zero current switching (ZCS) on the other. This technique produces exceptionally low IGBT switching losses through the use of an active snubber that recycles energy back to the source. Experimental results are presented for a 10 kW, 20 kHz converter.

Giant thermal spin torque assisted magnetic tunnel junction switching

NASA Astrophysics Data System (ADS)

Pushp, Aakash

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

Ovonic switching in tin selenide thin films. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Baxter, C. R.

1974-01-01

Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

Measuring Multi-Megavolt Diode Voltages

NASA Astrophysics Data System (ADS)

Pereira, N. R.; Swanekamp, S. B.; Weber, B. V.; Commisso, R. J.; Hinshelwood, D. D.; Stephanakis, S. J.

2002-12-01

The voltage in high-power diodes can be determined by measuring the Compton electrons generated by the diode's bremsstrahlung radiation. This technique is implemented with a Compton-Hall (C-H) voltmeter that collimates the bremsstrahlung onto a Compton target and bends the emitted Compton electron orbits off to the side with an applied magnetic field off to Si pin diode detectors. Voltage is determined from the ratio of the Compton electron dose to the forward x-ray dose. The instrument's calibration and response are determined from coupled electron/photon transport calculations. The applicable voltage range is tuned by adjusting the position of the electron detector relative to the Compton target or by varying the magnetic field strength. The instrument was used to obtain time-dependent voltage measurements for a pinched-beam diode whose voltage is enhanced by an upstream opening switch. In this case, plasmas and vacuum electron flow from the opening switch make it difficult to determine the voltage accurately from electrical measurements. The C-H voltmeter gives voltages that are significantly higher than those obtained from electrical measurements but are consistent with measurements of peak voltage based on nuclear activation of boron-nitride targets.

Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

NASA Astrophysics Data System (ADS)

Cui, B. S.; Guo, X. B.; Wu, K.; Li, D.; Zuo, Y. L.; Xi, L.

2016-03-01

Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe65Co35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (~4 GPa for PI as compared to ~180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work.

Double-injection, deep-impurity switch development

NASA Technical Reports Server (NTRS)

Selim, F. A.; Whitson, D. W.

1983-01-01

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Testing Single Phase IGBT H-Bridge Switch Plates for the High Voltage Converter Modulator at the Spallation Neutron Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peplov, Vladimir V; Anderson, David E; Solley, Dennis J

2014-01-01

Three IGBT H-bridge switching networks are used in each High Voltage Converter Modulator (HVCM) system at the Spallation Neutron Source (SNS) to generate drive currents to three boost transformer primaries switching between positive and negative bus voltages at 20 kHz. Every switch plate assembly is tested before installing it into an operational HVCM. A Single Phase Test Stand has been built for this purpose, and it is used for adjustment, measurement and testing of different configurations of switch plates. This paper will present a description of the Test Stand configuration and discuss the results of testing switch plates with twomore » different types of IGBT gate drivers currently in use on the HVCM systems. Comparison of timing characteristics of the original and new drivers and the resulting performance reinforces the necessity to replace the original H-bridge network drivers with the upgraded units.« less

Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

NASA Astrophysics Data System (ADS)

Singh, Arun K.; Auton, Gregory; Hill, Ernie; Song, Aimin

2018-07-01

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene’s high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current–voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the nonlinear component or curvature coefficient from DC results based on Shichman–Hodges model predicts the rectified output voltage, which is in good agreement with the experimental RF results.

Dynamical mechanical characteristic simulation and analysis of the low voltage switch under vibration and shock conditions

NASA Astrophysics Data System (ADS)

Miao, Xiaodan; Han, Feng

2017-04-01

The low voltage switch has widely application especially in the hostile environment such as large vibration and shock conditions. In order to ensure the validity of the switch in the hostile environment, it is necessary to predict its mechanical characteristic. In traditional method, the complex and expensive testing system is build up to verify its validity. This paper presented a method based on finite element analysis to predict the dynamic mechanical characteristic of the switch by using ANSYS software. This simulation could provide the basis for the design and optimization of the switch to shorten the design process to improve the product efficiency.

Magnetic field dependence of spin torque switching in nanoscale magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Yang, Liu; Rowlands, Graham; Katine, Jordan; Langer, Juergen; Krivorotov, Ilya

2012-02-01

Magnetic random access memory based on spin transfer torque effect in nanoscale magnetic tunnel junctions (STT-RAM) is emerging as a promising candidate for embedded and stand-alone computer memory. An important performance parameter of STT-RAM is stability of its free magnetic layer against thermal fluctuations. Measurements of the free layer switching probability as a function of sub-critical voltage at zero effective magnetic field (read disturb rate or RDR measurements) have been proposed as a method for quantitative evaluation of the free layer thermal stability at zero voltage. In this presentation, we report RDR measurement as a function of external magnetic field, which provide a test of the RDR method self-consistency and reliability.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

High-Yield, Zero-Leakage Expression System with a Translational Switch Using Site-Specific Unnatural Amino Acid Incorporation

PubMed Central

Minaba, Masaomi

2014-01-01

Synthetic biologists construct complex biological circuits by combinations of various genetic parts. Many genetic parts that are orthogonal to one another and are independent of existing cellular processes would be ideal for use in synthetic biology. However, our toolbox is still limited with respect to the bacterium Escherichia coli, which is important for both research and industrial use. The site-specific incorporation of unnatural amino acids is a technique that incorporates unnatural amino acids into proteins using a modified exogenous aminoacyl-tRNA synthetase/tRNA pair that is orthogonal to any native pairs in a host and is independent from other cellular functions. Focusing on the orthogonality and independency that are suitable for the genetic parts, we designed novel AND gate and translational switches using the unnatural amino acid 3-iodo-l-tyrosine incorporation system in E. coli. A translational switch was turned on after addition of 3-iodo-l-tyrosine in the culture medium within minutes and allowed tuning of switchability and translational efficiency. As an application, we also constructed a gene expression system that produced large amounts of proteins under induction conditions and exhibited zero-leakage expression under repression conditions. Similar translational switches are expected to be applicable also for eukaryotes such as yeasts, nematodes, insects, mammalian cells, and plants. PMID:24375139

Electro-optic control of a PPLN-unpoled LiNbO3 boundary for low-voltage Q switching of an intracavity frequency-doubled Nd3+:YVO4 laser.

PubMed

Torregrosa, A J; Maestre, H; Fernández-Pousa, C R; Pereda, J A; Capmany, J

2009-08-01

We present a simple technique to integrate an electro-optic Q switch in a periodically poled bulk lithium niobate crystal bounded by two unpoled (monodomain) regions. The technique exploits the high sensitivity to low applied electric fields of the total internal reflection condition in the periodic poled-unpoled boundary for the small grazing incidence angles associated with the diffraction of a focused Gaussian beam that propagates in the periodically poled region with its axis parallel to the boundary. When the arrangement is placed intracavity to a 1064 nm diode-pumped Nd(3+):YVO(4) laser, it performs simultaneously as a Q switch and as a second-harmonic generator, with Q switching starting at applied voltages as low as 1 V over a 500 microm thickness and with no additional optical elements.

Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

NASA Astrophysics Data System (ADS)

Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

2017-11-01

This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

Quench dynamics in superconducting nanojunctions: Metastability and dynamical Yang-Lee zeros

NASA Astrophysics Data System (ADS)

Souto, R. Seoane; Martín-Rodero, A.; Yeyati, A. Levy

2017-10-01

We study the charge transfer dynamics following the formation of a phase or voltage biased superconducting nanojunction using a full counting statistics analysis. We demonstrate that the evolution of the zeros of the generating function allows one to identify the population of different many body states much in the same way as the accumulation of Yang-Lee zeros of the partition function in equilibrium statistical mechanics is connected to phase transitions. We give an exact expression connecting the dynamical zeros to the charge transfer cumulants and discuss when an approximation based on "dominant" zeros is valid. We show that, for generic values of the parameters, the system gets trapped into a metastable state characterized by a nonequilibrium population of the many body states which is dependent on the initial conditions. We study in particular the effect of the switching rates in the dynamics showing that, in contrast to intuition, the deviation from thermal equilibrium increases for the slower rates. In the voltage biased case the steady state is reached independent of the initial conditions. Our method allows us to obtain accurate results for the steady state current and noise in quantitative agreement with steady state methods developed to describe the multiple Andreev reflections regime. Finally, we discuss the system dynamics after a sudden voltage drop showing the possibility of tuning the many body states population by an appropriate choice of the initial voltage, providing a feasible experimental way to access the quench dynamics and control the state of the system.

CFAVC scheme for high frequency series resonant inverter-fed domestic induction heating system

NASA Astrophysics Data System (ADS)

Nagarajan, Booma; Reddy Sathi, Rama

2016-01-01

This article presents the investigations on the constant frequency asymmetric voltage cancellation control in the AC-AC resonant converter-fed domestic induction heating system. Conventional fixed frequency control techniques used in the high frequency converters lead to non-zero voltage switching operation and reduced output power. The proposed control technique produces higher output power than the conventional fixed-frequency control strategies. In this control technique, zero-voltage-switching operation is maintained during different duty cycle operation for reduction in the switching losses. Complete analysis of the induction heating power supply system with asymmetric voltage cancellation control is discussed in this article. Simulation and experimental study on constant frequency asymmetric voltage cancellation (CFAVC)-controlled full bridge series resonant inverter is performed. Time domain simulation results for the open and closed loop of the system are obtained using MATLAB simulation tool. The simulation results prove the control of voltage and power in a wide range. PID controller-based closed loop control system achieves the voltage regulation of the proposed system for the step change in load. Hardware implementation of the system under CFAVC control is done using the embedded controller. The simulation and experimental results validate the performance of the CFAVC control technique for series resonant-based induction cooking system.

Reduction in the write error rate of voltage-induced dynamic magnetization switching using the reverse bias method

NASA Astrophysics Data System (ADS)

Ikeura, Takuro; Nozaki, Takayuki; Shiota, Yoichi; Yamamoto, Tatsuya; Imamura, Hiroshi; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

2018-04-01

Using macro-spin modeling, we studied the reduction in the write error rate (WER) of voltage-induced dynamic magnetization switching by enhancing the effective thermal stability of the free layer using a voltage-controlled magnetic anisotropy change. Marked reductions in WER can be achieved by introducing reverse bias voltage pulses both before and after the write pulse. This procedure suppresses the thermal fluctuations of magnetization in the initial and final states. The proposed reverse bias method can offer a new way of improving the writing stability of voltage-driven spintronic devices.

Ultrawide band switching: gas and oil breakdown research

NASA Astrophysics Data System (ADS)

Agee, Forrest J.; Lehr, Jane M.; Prather, William D.; Scholfield, David W.

1997-10-01

The generation of Ultra-Wide Band Pulses nanoseconds is a challenging problem that involves generating pulses with 100 pico-second rise times and voltage of 500 kV with pulse widths of the order of less than one to a few nanoseconds. A critical step involves switching high voltages with precision. The use of both gas and oil for the switching insulating medium have been accomplished with varying results. The Phillips Laboratory is pursuing both media in the gas switched Hindenburg series of pulsers and in the study of oil switches that promise good performance in compact packages. This paper reports on progress in gas switching associated with the new H-5 pulser and with the use of earlier Hindenburg pulsers to investigate the UWB properties of oil switches. We compare the design strategies and techniques of oil and gas switching in the context of pulsers of interest.

Precision zero-home locator

DOEpatents

Stone, William J.

1986-01-01

A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

Precision zero-home locator

DOEpatents

Stone, W.J.

1983-10-31

A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

Contact effects in light activated GaAs switches

NASA Astrophysics Data System (ADS)

Durkin, P. S.

1985-05-01

The purpose of this work was to examine the effects of various types of contacts on the switching behavior of a light-triggered power switch. The switch was constructed from a homogeneous wafer of chromium-doped gallium arsenide; the contacts were either ohmic, non-ohmic, or Schottky barriers. These were formed on the wafer in two geometries; both contacts on one side, and one contact spacings were used to permit the effects of the location of the existing laser pulse to be studied. A high voltage power supply (zero to 20 kV) was employed as the bias supply. A Nd:YAG laser, in the pulsed mode, was used to trigger the switch, which was mounted on a cold finger cooled to near liquid nitrogen temperature. Cooling reduced the dark current to manageable values (less than 1 micro A), and also reduced the avalanche breakdown voltage. The results of the measurements indicate that ohmic contacts produced more reliable switching than the non-ohmic or Schottky contacts, in as much as the shape of the output current pulse was better, and the number of pulses which the switches could sustain before the pulse shape deteriorated was greater, for the ohmic contacts. Surface discharge between the one-sided contacts obscured any differences in switching characteristics which might have depended on the location of the pulsed light excitation, so that no correlation between position and behavior could be obtained.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Voltage-induced switching of an antiferromagnetically ordered topological Dirac semimetal

NASA Astrophysics Data System (ADS)

Kim, Youngseok; Kang, Kisung; Schleife, André; Gilbert, Matthew J.

2018-04-01

An antiferromagnetic semimetal has been recently identified as a new member of topological semimetals that may host three-dimensional symmetry-protected Dirac fermions. A reorientation of the Néel vector may break the underlying symmetry and open a gap in the quasiparticle spectrum, inducing the (semi)metal-insulator transition. Here, we predict that such a transition may be controlled by manipulating the chemical potential location of the material. We perform both analytical and numerical analysis on the thermodynamic potential of the model Hamiltonian and find that the gapped spectrum is preferred when the chemical potential is located at the Dirac point. As the chemical potential deviates from the Dirac point, the system shows a possible transition from the gapped to the gapless phase and switches the corresponding Néel vector configuration. We perform density functional theory calculations to verify our analysis using a realistic material and discuss a two terminal transport measurement as a possible route to identify the voltage-induced switching of the Néel vector.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Switches from pi- to sigma-bonding complexes controlled by gate voltages.

PubMed

Matsui, Eriko; Harnack, Oliver; Matsuzawa, Nobuyuki N; Yasuda, Akio

2005-10-01

A conjugated polymer/metal ion/liquid-crystal molecular system was set between source and drain electrodes with a 100 nm gap. When gate voltage (Vg) increases, the current between source and drain electrodes increases. Infrared spectra show this system to be composed of pi and sigma complexes. At Vg = 0, the pi complex dominates the sigma complex, whereas the sigma complex becomes dominant when Vg is switched on. Calculations found that the pi complex has lower conductivity than the sigma complex.

Switching of actin-myosin motors by voltage-induced pH bias in vitro.

PubMed

Hatori, Kuniyuki; Iwase, Takahiro; Wada, Reito

2016-08-01

ATP-driven motor proteins, which function in cell motility and organelle transport, have potential applications as bio-inspired micro-devices; however, their control remains unsatisfactory. Here, we show rapid-velocity control of actin filaments interacting with myosin motors using voltage applied to Pt electrodes in an in vitro motility system, by which immediate increases and decreases in velocity were induced beside the cathode and anode, respectively. Indicator dye revealed pH changes after voltage application, and alternate voltage switching allowed actin filaments to cyclically alter their velocity in response to these changes. This principle provides a basis for on-demand control of not only motor proteins but also pH-sensitive events at a microscopic level. Copyright © 2016 Elsevier Inc. All rights reserved.

Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

DTIC Science & Technology

2005-01-01

We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real - time systems , and present a...scheduling algorithm and apply it to two real-life task sets. Our results show that energy can be conserved in embedded real - time systems using energy...aware task scheduling. We also show that switching times have a significant effect on the energy consumed in hard real - time systems .

Fully parameterized model of a voltage-driven capacitive coupled micromachined ohmic contact switch for RF applications

NASA Astrophysics Data System (ADS)

Heeb, Peter; Tschanun, Wolfgang; Buser, Rudolf

2012-03-01

A comprehensive and completely parameterized model is proposed to determine the related electrical and mechanical dynamic system response of a voltage-driven capacitive coupled micromechanical switch. As an advantage over existing parameterized models, the model presented in this paper returns within few seconds all relevant system quantities necessary to design the desired switching cycle. Moreover, a sophisticated and detailed guideline is given on how to engineer a MEMS switch. An analytical approach is used throughout the modelling, providing representative coefficients in a set of two coupled time-dependent differential equations. This paper uses an equivalent mass moving along the axis of acceleration and a momentum absorption coefficient. The model describes all the energies transferred: the energy dissipated in the series resistor that models the signal attenuation of the bias line, the energy dissipated in the squeezed film, the stored energy in the series capacitor that represents a fixed separation in the bias line and stops the dc power in the event of a short circuit between the RF and dc path, the energy stored in the spring mechanism, and the energy absorbed by mechanical interaction at the switch contacts. Further, the model determines the electrical power fed back to the bias line. The calculated switching dynamics are confirmed by the electrical characterization of the developed RF switch. The fabricated RF switch performs well, in good agreement with the modelled data, showing a transition time of 7 µs followed by a sequence of bounces. Moreover, the scattering parameters exhibit an isolation in the off-state of >8 dB and an insertion loss in the on-state of <0.6 dB up to frequencies of 50 GHz. The presented model is intended to be integrated into standard circuit simulation software, allowing circuit engineers to design the switch bias line, to minimize induced currents and cross actuation, as well as to find the mechanical structure dimensions

PWM-switching pattern-based diagnosis scheme for single and multiple open-switch damages in VSI-fed induction motor drives.

PubMed

Trabelsi, Mohamed; Boussak, Mohamed; Gossa, Moncef

2012-03-01

This paper deals with a fault detection technique for insulated-gate bipolar transistors (IGBTs) open-circuit faults in voltage source inverter (VSI)-fed induction motor drives. The novelty of this idea consists in analyzing the pulse-width modulation (PWM) switching signals and the line-to-line voltage levels during the switching times, under both healthy and faulty operating conditions. The proposed method requires line-to-line voltage measurement, which provides information about switching states and is not affected by the load. The fault diagnosis scheme is achieved using simple hardware and can be included in the existing inverter system without any difficulty. In addition, it allows not only accurate single and multiple faults diagnosis but also minimization of the fault detection time to a maximum of one switching period (T(c)). Simulated and experimental results on a 3-kW squirrel-cage induction motor drive are displayed to validate the feasibility and the effectiveness of the proposed strategy. Crown Copyright © 2011. Published by Elsevier Ltd. All rights reserved.

Switching effects and spin-valley Andreev resonant peak shifting in silicene superconductor

NASA Astrophysics Data System (ADS)

Soodchomshom, Bumned; Niyomsoot, Kittipong; Pattrawutthiwong, Eakkarat

2018-03-01

The magnetoresistance and spin-valley transport properties in a silicene-based NM/FB/SC junction are investigated, where NM, FB and SC are normal, ferromagnetic and s-wave superconducting silicene, respectively. In the FB region, perpendicular electric and staggered exchange fields are applied. The quasiparticles may be described by Dirac Bogoliubov-de Gennes equation due to Cooper pairs formed by spin-valley massive fermions. The spin-valley conductances are calculated based on the modified Blonder-Tinkham-Klapwijk formalism. We find the spin-valley dependent Andreev resonant peaks in the junction shifted by applying exchange field. Perfect conductance switch generated by interplay of intrinsic spin orbit interaction and superconducting gap has been predicted. Spin and valley polarizations are almost linearly dependent on biased voltage near zero bias and then turn into perfect switch at biased voltage approaching the superconducting gap. The perfect switching of large magnetoresistance has been also predicted at biased energy near the superconducting gap. These switching effects may be due to the presence of spin-valley Andreev resonant peak near the superconducting gap. Our work reveals potential of silicene as applications of electronic switching devices and linear control of spin and valley polarizations.

Microwave-Induced Magneto-Oscillations and Signatures of Zero-Resistance States in Phonon-Drag Voltage in Two-Dimensional Electron Systems

NASA Astrophysics Data System (ADS)

Levin, A. D.; Momtaz, Z. S.; Gusev, G. M.; Raichev, O. E.; Bakarov, A. K.

2015-11-01

We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.

Microwave-Induced Magneto-Oscillations and Signatures of Zero-Resistance States in Phonon-Drag Voltage in Two-Dimensional Electron Systems.

PubMed

Levin, A D; Momtaz, Z S; Gusev, G M; Raichev, O E; Bakarov, A K

2015-11-13

We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.

Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

NASA Astrophysics Data System (ADS)

Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

Design techniques for low-voltage analog integrated circuits

NASA Astrophysics Data System (ADS)

Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

2017-08-01

In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

Measurement of the densities of Cu and Ag vapours in a low-voltage switch using the hook method

NASA Astrophysics Data System (ADS)

Lins, Günter

2012-05-01

In a research model of a low-voltage circuit breaker with fixed contacts and windows for optical access, arcs powered by either a high-current transformer or a capacitor bank were initiated by the explosion of tungsten wires. Air at atmospheric pressure was the switching medium. The number densities of neutral silver and copper vapours from contacts and arc runners were measured simultaneously by the hook method using a Mach-Zehnder interferometer combined with a 1 m spectrograph and a gated intensified CCD camera. When an arc current was flowing, a substantial fraction of the metal vapour was ionized, and thus not amenable to a density measurement with the technique chosen. To nevertheless obtain approximate density values, the arc current was forced to zero within 8 to 10 µs at a preset time and measurements were carried out 100 µs after extinction of the arc. At that time the metal vapour was expected to have recombined to a large extent but not yet diffused to the walls in significant amounts. Depending on the current amplitude reached within the arc duration the arc remained anchored to the silver contacts or commutated to the copper arc runners. At a maximum current amplitude of 650 A Ag vapour densities of the order of 1022 m-3 were observed near the anode outweighing the Cu vapour density by a factor of 20. When at 1600 A the arc commutated to the arc runners a Cu vapour density of 8 × 1021 m-3 was reached while the Ag density remained limited to 2 × 1021 m-3.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

PubMed

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Fast simulation techniques for switching converters

NASA Technical Reports Server (NTRS)

King, Roger J.

1987-01-01

Techniques for simulating a switching converter are examined. The state equations for the equivalent circuits, which represent the switching converter, are presented and explained. The uses of the Newton-Raphson iteration, low ripple approximation, half-cycle symmetry, and discrete time equations to compute the interval durations are described. An example is presented in which these methods are illustrated by applying them to a parallel-loaded resonant inverter with three equivalent circuits for its continuous mode of operation.

An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

NASA Astrophysics Data System (ADS)

Lee, Sin-woo; Do, Hyun-Lark

2016-12-01

This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

Microwave Switching and Attenuation with Superconductors.

NASA Astrophysics Data System (ADS)

Poulin, Grant Darcy

1995-01-01

The discovery of high temperature superconducting (HTS) materials having a critical temperature above the boiling point of liquid nitrogen has generated a large amount of interest in both the basic and applied scientific communities. Considerable research effort has been expended in developing HTS microwave devices, since thin film, passive, microwave components will likely be the first area to be successfully commercialized. This thesis describes a new thin film HTS microwave device that can be operated as a switch or as a continuously variable attenuator. It is well suited for low power analog signal control applications and can easily be integrated with other HTS devices. Due to its small size and mass, the device is expected to find application as a receiver protection switch or as an automatic gain control element, both used in satellite communications receivers. The device has a very low insertion loss, and the isolation in the OFF state is continuously variable to 25 dB. With minor modifications, an isolation exceeding 50 dB is readily achievable. A patent application for the device has been filed, with the patent rights assigned to COM DEV. The device is based on an unusual non-linear response in HTS materials. Under a non-zero DC voltage bias, the current through a superconducting bridge is essentially voltage independent. We have proposed a thermal instability to account for this behaviour. Thermal modelling in conjunction with direct temperature measurements were used to confirm the validity of the model. We have developed a detailed model explaining the microwave response of the device. The model accurately predicts the microwave attenuation as a function of the applied DC control voltage and fully explains the device operation. A key feature is that the device acts as a pure resistive element at microwave frequencies, with no reactance. The resistance is continuously variable, controlled by the DC bias voltage. This distinguishes it from a PIN diode

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

PubMed

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

PubMed

Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong

2017-08-16

In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10 5 ), excellent cyclic endurance (>10 3 ), and long retention time (>10 4 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.

Ovonic type switching in tin selenide thin films

NASA Technical Reports Server (NTRS)

Baxter, C. R.; Mclennan, W. D.

1975-01-01

Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

The Series Connected Buck Boost Regulator Concept for High Efficiency Light Weight DC Voltage Regulation

NASA Technical Reports Server (NTRS)

Birchenough, Arthur G.

2003-01-01

Improvements in the efficiency and size of DC-DC converters have resulted from advances in components, primarily semiconductors, and improved topologies. One topology, which has shown very high potential in limited applications, is the Series Connected Boost Unit (SCBU), wherein a small DC-DC converter output is connected in series with the input bus to provide an output voltage equal to or greater than the input voltage. Since the DC-DC converter switches only a fraction of the power throughput, the overall system efficiency is very high. But this technique is limited to applications where the output is always greater than the input. The Series Connected Buck Boost Regulator (SCBBR) concept extends partial power processing technique used in the SCBU to operation when the desired output voltage is higher or lower than the input voltage, and the implementation described can even operate as a conventional buck converter to operate at very low output to input voltage ratios. This paper describes the operation and performance of an SCBBR configured as a bus voltage regulator providing 50 percent voltage regulation range, bus switching, and overload limiting, operating above 98 percent efficiency. The technique does not provide input-output isolation.

A Solution-Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon-Near-Zero Medium.

PubMed

Guo, Qiangbing; Cui, Yudong; Yao, Yunhua; Ye, Yuting; Yang, Yue; Liu, Xueming; Zhang, Shian; Liu, Xiaofeng; Qiu, Jianrong; Hosono, Hideo

2017-07-01

All the optical properties of materials are derived from dielectric function. In spectral region where the dielectric permittivity approaches zero, known as epsilon-near-zero (ENZ) region, the propagating light within the material attains a very high phase velocity, and meanwhile the material exhibits strong optical nonlinearity. The interplay between the linear and nonlinear optical response in these materials thus offers unprecedented pathways for all-optical control and device design. Here the authors demonstrate ultrafast all-optical modulation based on a typical ENZ material of indium tin oxide (ITO) nanocrystals (NCs), accessed by a wet-chemistry route. In the ENZ region, the authors find that the optical response in these ITO NCs is associated with a strong nonlinear character, exhibiting sub-picosecond response time (corresponding to frequencies over 2 THz) and modulation depth up to ≈160%. This large optical nonlinearity benefits from the highly confined geometry in addition to the ENZ enhancement effect of the ITO NCs. Based on these ENZ NCs, the authors successfully demonstrate a fiber optical switch that allows switching of continuous laser wave into femtosecond laser pulses. Combined with facile processibility and tunable optical properties, these solution-processed ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Voltage-Responsive Free-Blockage Controlled-Release System Based on Hydrophobicity Switching.

PubMed

Jiao, Xiangyu; Sun, Ruijuan; Cheng, Yaya; Li, Fengyu; Du, Xin; Wen, Yongqiang; Song, Yanlin; Zhang, Xueji

2017-05-19

Controlled-release systems based on mesoporous silica nanomaterials (MSNs) have drawn great attention owing to their potential biomedical applications. Various switches have been designed to control the release of cargoes through the construction of physical blocking units on the surface of MSNs. However, such physical blockages are limited by poor sealing ability and low biocompatibility, and most of them lack closure ability. Herein, a voltage-responsive controlled-release system was constructed by functionalizing the nanopore of MSNs with ferrocene. The system realized free-blockage controlled release and achieved pulsatile release. The nanopores of the ferrocene-functionalized MSNs were hydrophobic enough to prevent invasion of the solution. Once a suitable voltage was applied, the nanopores became hydrophilic, which was followed by invasion of the solution and the release of the cargos. Moreover, pulsatile release was realized, which avoided unexpected release after the stimulus disappeared. Thus, we believe that our studies provide new insight into highly effective blockage for MSNs. Furthermore, the voltage-responsive release system is expected to find use in electrical stimulation combination therapy and bioelectricity-responsive release. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of a switched integrator amplifier for high-accuracy optical measurements.

PubMed

Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

2008-11-01

In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed.

Techniques to measure tension in wires or straw tubes

NASA Astrophysics Data System (ADS)

Oh, S. H.; Lin, S.; Wang, C.

2018-01-01

We discuss two different ways of measuring the tension in light wires and straws. The first technique uses an operational amplifier to subtract out the oscillating driving voltage mixed in the output voltage, which also has the signal. The isolated signal is amplified and displayed in an oscilloscope. In the second technique, an analog switch routes the oscillating voltage to a wire for a fraction of seconds, and then switches off the voltage. As the voltage is turned off, the induced signal from the wire is routed to an amplifier-rectifier circuit for a fraction of a second to measure the signal size as a function of the driving frequency. The first technique fits well to measure a single wire, while the second one fits well to measure many wires, 16 in our case, at a time.

Studies of ZVS soft switching of dual-active-bridge isolated bidirectional DC-DC converters

NASA Astrophysics Data System (ADS)

Xu, Fei; Zhao, Feng; Shi, Qibiao; Wen, Xuhui

2018-05-01

To operate dual-active-bridge isolated bidirectional dc- dc converter (DAB) at high efficiency, the two bridge switches must operate with Zero-Voltage-Switching (ZVS) over as wide an operating range as possible. This paper proposes a new perspective on realizing ZVS in dead-time. An exact theoretical analysis and mathematical mode is built to explain the process of ZVS switching in dead-time under Single Phase Shift (SPS) control strategy. In order to assure the two bridge switches operate on soft switching, every SPS switching point is analyzed. Generally, dead-time will be determined when the power electronic devices is selected. The key factor to realizing ZVS is the size of the end time of resonance comparing to dead-time. Through detailed analysis, it can obtain the conditions of all switches achieving ZVS turn-on and turn-off. Finally, simulation validates the theoretical analysis and some advice are given to realize the ZVS soft switching.

Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity

NASA Astrophysics Data System (ADS)

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Kim, Seon Yong; Park, In-Sung; Ahn, Jinho

2018-03-01

The anode interface effects on the resistive switching characteristics of Pt/HfO2/Pt resistors are investigated by changing the forming and switching polarity. Resistive switching properties are evaluated and compared with the polarity operation procedures, such as the reset voltage (Vr), set voltage (Vs), and current levels at low and high resistance states. When the same forming and switching voltage polarity are applied to the resistor, their switching parameters are widely distributed. However, the opposite forming and switching voltage polarity procedures enhance the uniformity of the switching parameters. In particular, the Vs distribution is strongly affected by the voltage polarity variation. A model is proposed based on cone-shaped filament formation through the insulator and the cone diameter at the anode interface to explain the improved resistive switching characteristics under opposite polarity operation. The filament cone is thinner near the anode interface during the forming process; hence, the anode is altered by the application of a switching voltage with opposite polarity to the forming voltage polarity and the converted anode interface becomes the thicker part of the cone. The more uniform and stable switching behavior is attributed to control over the formation and rupture of the cone-shaped filaments at their thicker parts.

Improved lifetime high voltage switch electrode

NASA Astrophysics Data System (ADS)

Halverson, W.

1985-06-01

In this Phase 1 Small Business Innovation Research (SBIR) program, preliminary tests of ion implantation to increase the lifetime of spark switch electrodes have indicated that a 185 keV carbon ion implant into a tungsten-copper composite has reduced electrode erosion by a factor of two to four. Apparently, the thin layer of tungsten carbide (WC) has better thermal properties than pure tungsten; the WC may have penetrated into the unimplanted body of the electrode by liquid and/or solid phase diffusion during erosion testing. These encouraging results should provide the basis for a Phase 2 SBIR program to investigate further the physical and chemical effects of ion implantation on spark gap electrodes and to optimize the technique for applications.

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Bilayer-Spanning DNA Nanopores with Voltage-Switching between Open and Closed State

PubMed Central

2014-01-01

Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology. PMID:25338165

Bilayer-spanning DNA nanopores with voltage-switching between open and closed state.

PubMed

Seifert, Astrid; Göpfrich, Kerstin; Burns, Jonathan R; Fertig, Niels; Keyser, Ulrich F; Howorka, Stefan

2015-02-24

Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology.

Note: A rectangular pulse generator for 50 kV voltage, 0.8 ns rise time, and 10 ns pulse width based on polymer-film switch.

PubMed

Wu, Hanyu; Zhang, Xinjun; Sun, Tieping; Zeng, Zhengzhong; Cong, Peitian; Zhang, Shaoguo

2015-10-01

In this article, we describe a rectangular pulse generator, consisting of a polymer-film switch, a tri-plate transmission line, and parallel post-shaped ceramic resistor load, for 50-kV voltage, 0.8-ns rise time, and 10-ns width. The switch and resistors are arranged in atmospheric air and the transmission line can work in atmospheric air or in transformer oil to change the pulse width from 6.7 ns to 10 ns. The fast switching and low-inductance characteristics of the polymer-film switch ensure the fast rising wavefront of <1 ns. This generator can be applied in the calibration of nanosecond voltage dividers and used for electromagnetic pulse tests as a fast-rising current injection source.

Low Cost Embedded Controlled Full Bridge LC Parallel Resonant Converter

NASA Astrophysics Data System (ADS)

Chandrasekhar, P.; Reddy, S.

2009-01-01

In this paper the converter requirements for an optimum control of an electrolyser linked with a DC bus are analyzed and discussed. An electrolyser is a part of renewable energy system which generates hydrogen from water electrolysis. The hydrogen generating device is part of a complex system constituted by a supplying photovoltaic plant, the grid and a fuel cell battery. The characterization in several operative conditions of an actual industrial electrolyser is carried out in order to design and optimize the DC/DC converter. A dedicated zero voltage switching DC/DC converter is presented and simulated inside the context of the distributed energy production and storage system. The proposed supplying converter gives a stable output voltage and high circuit efficiency in all the proposed simulated scenarios. The adopted DC/DC converter is realized in a full-bridge topology technique in order to achieve zero voltage switching for the power switches and to regulate the output voltage. This converter has advantages like high power density, low EMI and reduced switching stresses. The simulation results are verified with the experimental results.

On the primary variable switching technique for simulating unsaturated-saturated flows

NASA Astrophysics Data System (ADS)

Diersch, H.-J. G.; Perrochet, P.

Primary variable switching appears as a promising numerical technique for variably saturated flows. While the standard pressure-based form of the Richards equation can suffer from poor mass balance accuracy, the mixed form with its improved conservative properties can possess convergence difficulties for dry initial conditions. On the other hand, variable switching can overcome most of the stated numerical problems. The paper deals with variable switching for finite elements in two and three dimensions. The technique is incorporated in both an adaptive error-controlled predictor-corrector one-step Newton (PCOSN) iteration strategy and a target-based full Newton (TBFN) iteration scheme. Both schemes provide different behaviors with respect to accuracy and solution effort. Additionally, a simplified upstream weighting technique is used. Compared with conventional approaches the primary variable switching technique represents a fast and robust strategy for unsaturated problems with dry initial conditions. The impact of the primary variable switching technique is studied over a wide range of mostly 2D and partly difficult-to-solve problems (infiltration, drainage, perched water table, capillary barrier), where comparable results are available. It is shown that the TBFN iteration is an effective but error-prone procedure. TBFN sacrifices temporal accuracy in favor of accelerated convergence if aggressive time step sizes are chosen.

Device for monitoring cell voltage

DOEpatents

Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

2012-08-21

A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

Aircraft lightning-induced voltage test technique developments

NASA Technical Reports Server (NTRS)

Crouch, K. E.

1983-01-01

High voltage safety, fuels safety, simulation, and response/measurement techniques are discussed. Travelling wave transit times, return circuit conductor configurations, LC ladder network generators, and repetitive pulse techniques are also discussed. Differential conductive coaxial cable, analog fiber optic link, repetitive pulse sampled data instrumentation system, flash A/D optic link system, and an FM telemetry system are considered.

The Voltage Distribution Characteristics of a Hybrid Circuit Breaker During High Current Interruption

NASA Astrophysics Data System (ADS)

Cheng, Xian; Duan, Xiongying; Liao, Minfu; Huang, Zhihui; Luo, Yan; Zou, Jiyan

2013-08-01

Hybrid circuit breaker (HCB) technology based on a vacuum interrupter and a SF6 interrupter in series has become a new research direction because of the low-carbon requirements for high voltage switches. The vacuum interrupter has an excellent ability to deal with the steep rising part of the transient recovery voltage (TRV), while the SF6 interrupter can withstand the peak part of the voltage easily. An HCB can take advantage of the interrupters in the current interruption process. In this study, an HCB model based on the vacuum ion diffusion equations, ion density equation, and modified Cassie-Mayr arc equation is explored. A simulation platform is constructed by using a set of software called the alternative transient program (ATP). An HCB prototype is also designed, and the short circuit current is interrupted by the HCB under different action sequences of contacts. The voltage distribution of the HCB is analyzed through simulations and tests. The results demonstrate that if the vacuum interrupter withstands the initial TRV and interrupts the post-arc current first, then the recovery speed of the dielectric strength of the SF6 interrupter will be fast. The voltage distribution between two interrupters is determined by their post-arc resistance, which happens after current-zero, and subsequently, it is determined by the capacitive impedance after the post-arc current decays to zero.

Zero Thermal Noise in Resistors at Zero Temperature

NASA Astrophysics Data System (ADS)

Kish, Laszlo B.; Niklasson, Gunnar A.; Granqvist, Claes-Göran

2016-06-01

The bandwidth of transistors in logic devices approaches the quantum limit, where Johnson noise and associated error rates are supposed to be strongly enhanced. However, the related theory — asserting a temperature-independent quantum zero-point (ZP) contribution to Johnson noise, which dominates the quantum regime — is controversial and resolution of the controversy is essential to determine the real error rate and fundamental energy dissipation limits of logic gates in the quantum limit. The Callen-Welton formula (fluctuation-dissipation theorem) of voltage and current noise for a resistance is the sum of Nyquist’s classical Johnson noise equation and a quantum ZP term with a power density spectrum proportional to frequency and independent of temperature. The classical Johnson-Nyquist formula vanishes at the approach of zero temperature, but the quantum ZP term still predicts non-zero noise voltage and current. Here, we show that this noise cannot be reconciled with the Fermi-Dirac distribution, which defines the thermodynamics of electrons according to quantum-statistical physics. Consequently, Johnson noise must be nil at zero temperature, and non-zero noise found for certain experimental arrangements may be a measurement artifact, such as the one mentioned in Kleen’s uncertainty relation argument.

Power-MOSFET Voltage Regulator

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Triple voltage dc-to-dc converter and method

DOEpatents

Su, Gui-Jia

2008-08-05

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Voltage control in pulsed system by predict-ahead control

DOEpatents

Payne, Anthony N.; Watson, James A.; Sampayan, Stephen E.

1994-01-01

A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load.

Voltage control in pulsed system by predict-ahead control

DOEpatents

Payne, A.N.; Watson, J.A.; Sampayan, S.E.

1994-09-13

A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load. 4 figs.

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

NASA Astrophysics Data System (ADS)

Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Fuhrmann, Bodo; Schmidt, Georg

2016-04-01

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

Inverting Quasi-Resonant Switched-Capacitor Bidirectional Converter and Its Application to Battery Equalization

NASA Astrophysics Data System (ADS)

Lee, Yuang-Shung; Chiu, Yin-Yuan; Cheng, Ming-Wang; Ko, Yi-Pin; Hsiao, Sung-Hsin

The proposed quasi-resonant (QR) zero current switching (ZCS) switched-capacitor (SC) converter is a new type of bidirectional power flow control conversion scheme. The proposed converter is able to provide voltage conversion ratios from -3/-{1 \\over 3} (triple-mode/trisection-mode) to -n/-{1 \\over n} (-n-mode/-{1 \\over n}-mode) by adding a different number of switched-capacitors and power MOSFET switches with a small series connected resonant inductor for forward and reverse power flow control schemes. It possesses the advantages of low switching losses and current stress in this QR ZCS SC converter. The principle of operation, theoretical analysis of the proposed triple-mode/trisection-mode bidirectional power conversion scheme is described in detail with circuit model analysis. Simulation and experimental studies are carried out to verify the performance of the proposed inverting type ZCS SC QR bidirectional converter. The proposed converters can be applied to battery equalization for battery management system (BMS).

Picosecond High Pressure Gas Switch Experiment

DTIC Science & Technology

1993-06-01

the calculated pulse waveform for a much higher voltage and pressure switch . Also, a discussion of the modifications made on an existing pulse...s 80 8 ~ 60 J 40 .. : ~--~: __ ~’----~-~ 0.1 10 100 1000 Frequency Figure 7. Output switch recovery. Conclusion The high- pressure switch has...effective in matching experimental results, and should thus be useful in the design of high-voltage and pressure switch configurations

[Development of residual voltage testing equipment].

PubMed

Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

2014-07-01

For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

Enhancement of macroscopic quantum tunneling in the higher-order phase switches of Bi2212 intrinsic Josephson junctions

NASA Astrophysics Data System (ADS)

Kitano, Haruhisa; Yamaguchi, Ayami; Takahashi, Yusaku; Umegai, Shunpei; Watabe, Yuji; Ohnuma, Haruka; Hosaka, Kazutaka; Kakehi, Daiki

2018-03-01

The macroscopic quantum tunneling (MQT) in the current-biased intrinsic Josephson junctions (IJJs) of high-T c cuprates has attracted much attention for decades. Although the MQT for the phase switches from the zero to the first voltage state (1st SW) in the multiple-branched I-V curves is well explained by the conventional theory, the occurrence of MQT for the higher order switches such as the switch from the 1st to 2nd voltage state (2nd SW) has been still debated. Here, we present an experimental study on the phase switches of small IJJs fabricated from underdoped Bi2Sr2(Ca,Y)Cu2Oy. We observed the single photon transition between quantized energy levels in the 3rd phase switches at 59.15 GHz and 2 K. The comparison with the previous studies on the nearly optimal-doped Bi2Sr2CaCu2Oy clearly suggests a possibility that the MQT rate for the higher-order phase switches is commonly enhanced by the effective suppression of the energy barrier for the higher-order phase escape due to the phase-running state after the 1st SW, in spite of the large difference in a critical current density and T c.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

PubMed Central

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

2014-01-01

The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

PubMed

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

2014-08-04

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Direct model-based predictive control scheme without cost function for voltage source inverters with reduced common-mode voltage

NASA Astrophysics Data System (ADS)

Kim, Jae-Chang; Moon, Sung-Ki; Kwak, Sangshin

2018-04-01

This paper presents a direct model-based predictive control scheme for voltage source inverters (VSIs) with reduced common-mode voltages (CMVs). The developed method directly finds optimal vectors without using repetitive calculation of a cost function. To adjust output currents with the CMVs in the range of -Vdc/6 to +Vdc/6, the developed method uses voltage vectors, as finite control resources, excluding zero voltage vectors which produce the CMVs in the VSI within ±Vdc/2. In a model-based predictive control (MPC), not using zero voltage vectors increases the output current ripples and the current errors. To alleviate these problems, the developed method uses two non-zero voltage vectors in one sampling step. In addition, the voltage vectors scheduled to be used are directly selected at every sampling step once the developed method calculates the future reference voltage vector, saving the efforts of repeatedly calculating the cost function. And the two non-zero voltage vectors are optimally allocated to make the output current approach the reference current as close as possible. Thus, low CMV, rapid current-following capability and sufficient output current ripple performance are attained by the developed method. The results of a simulation and an experiment verify the effectiveness of the developed method.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF Nanoparticles.

PubMed

Sun, Xiangyu; Wu, Chuangui; Shuai, Yao; Pan, Xinqiang; Luo, Wenbo; You, Tiangui; Bogusz, Agnieszka; Du, Nan; Li, Yanrong; Schmidt, Heidemarie

2016-12-07

Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiO x F y /Ti/Pt stack with extremely low switch-on voltage of 0.07 V. Operating current as low as 10 nA was also obtained by conductive atomic force microscopy. The highly defective TiO x F y layer was fabricated by plasma treatment using helium, oxygen, and carbon tetrafluoride orderly. During the electroforming process, AgF nanoparticles were formed due to the diffusion of Ag + which reacted with the adsorbed F - in the TiO x F y layer. These nanoparticles are of great importance to resistive switching performance because they are believed to be conductive phases and become part of the conducting path when the sample is switched to a low-resistance state.

Research of an electromagnetically actuated spark gap switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Tianyang; Chen, Dongqun, E-mail: csycdq@163.com; Liu, Jinliang

2013-11-15

As an important part of pulsed power systems, high-voltage and high-current triggered spark gap switch and its trigger system are expected to achieve a compact structure. In this paper, a high-voltage, high-current, and compact electromagnetically actuated spark gap switch is put forward, and it can be applied as a part of an intense electron-beam accelerator (IEBA). A 24 V DC power supply is used to trigger the switch. The characteristics of the switch were measured for N{sub 2} when the gas pressure is 0.10–0.30 MPa. The experimental results showed that the voltage/pressure (V/p) curve of the switch was linear relationship.more » The operating ranges of the switch were 21%–96%, 21%–95%, 21%–95%, 19%–95%, 17%–95%, and 16%–96% of the switch's self-breakdown voltage when the gas pressures were 0.10, 0.14, 0.18, 0.22, 0.26, and 0.30 MPa, respectively. The switch and its trigger system worked steadily and reliably with a peak voltage of 30 kV, a peak current of 60 kA in the IEBA when the pressure of N{sub 2} in the switch was 0.30 MPa.« less

Diplexer switch

NASA Technical Reports Server (NTRS)

Grauling, C. H., Jr.; Parker, T. W.

1977-01-01

Switch achieves high isolation and continuous input/output matching by using resonant coupling structure of diplexer. Additionally, dc bias network used to control switch is decoupled from RF input and output lines. Voltage transients in external circuits are thus minimized.

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Development and fabrication of improved power transistor switches

NASA Technical Reports Server (NTRS)

Hower, P. L.; Chu, C. K.

1979-01-01

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

HOLLOTRON switch for megawatt lightweight space inverters

NASA Technical Reports Server (NTRS)

Poeschel, R. L.; Goebel, D. M.; Schumacher, R. W.

1991-01-01

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

Bipolar resistive switching of single gold-in-Ga2O3 nanowire.

PubMed

Hsu, Chia-Wei; Chou, Li-Jen

2012-08-08

We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.

Load insensitive electrical device. [power converters for supplying direct current at one voltage from a source at another voltage

NASA Technical Reports Server (NTRS)

Schwarz, F. C. (Inventor)

1974-01-01

A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

NASA Astrophysics Data System (ADS)

Thakre, Atul; Kumar, Ashok

2017-12-01

An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (˜ 2 V) and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ˜103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

NASA Astrophysics Data System (ADS)

Baldacchini, Chiara; Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore

2015-05-01

Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

Zero field reversal probability in thermally assisted magnetization reversal

NASA Astrophysics Data System (ADS)

Prasetya, E. B.; Utari; Purnama, B.

2017-11-01

This paper discussed about zero field reversal probability in thermally assisted magnetization reversal (TAMR). Appearance of reversal probability in zero field investigated through micromagnetic simulation by solving stochastic Landau-Lifshitz-Gibert (LLG). The perpendicularly anisotropy magnetic dot of 50×50×20 nm3 is considered as single cell magnetic storage of magnetic random acces memory (MRAM). Thermally assisted magnetization reversal was performed by cooling writing process from near/almost Curie point to room temperature on 20 times runs for different randomly magnetized state. The results show that the probability reversal under zero magnetic field decreased with the increase of the energy barrier. The zero-field probability switching of 55% attained for energy barrier of 60 k B T and the reversal probability become zero noted at energy barrier of 2348 k B T. The higest zero-field switching probability of 55% attained for energy barrier of 60 k B T which corespond to magnetif field of 150 Oe for switching.

Dose Rate Switching Technique on ELDRS-Free Bipolar Devices

NASA Astrophysics Data System (ADS)

Boch, J.; Michez, A.; Rousselet, M.; Dhombres, S.; Touboul, A. D.; Vaillé, J.-R.; Dusseau, L.; Lorfèvre, E.; Chatry, N.; Sukhaseum, N.; Saigné, F.

2016-08-01

The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS. Experimental data and modeling results are presented and discussed in terms of hardness assurance. It is shown, for devices that do not show ELDRS, that a time is required before the switched devices reach the LDR curve. As a solution, it is proposed to apply an annealing between the HDR and the LDR irradiation.

Development and Investigation of Tungsten Copper Sintered Parts for Using in Medium and High Voltage Switching Devices

NASA Astrophysics Data System (ADS)

Lungu, M. V.; Lucaci, M.; Tsakiris, V.; Brătulescu, A.; Cîrstea, C. D.; Marin, M.; Pătroi, D.; Mitrea, S.; Marinescu, V.; Grigore, F.; Tălpeanu, D.; Stancu, N.; Godeanu, P.; Melnic, C.

2017-06-01

Abstract Tungsten-copper (W-Cu) sintered parts with 75 wt.% W, 24 wt.% Cu and 1 wt.% Ni for using as arcing contacts in medium and high voltage switching devices were developed successfully by powder metallurgy (PM) techniques. Sintered parts with diameter of 50±0.5 mm and height of 6±0.5 mm were manufactured by pressing-sintering-infiltration (P-S-I) and spark plasma sintering (SPS) at sintering temperature of 1150°C, and 1050°C, respectively. Physical, chemical, electrical, thermal and mechanical properties of the samples were investigated. Microstructure was analyzed by optical microscopy and scanning electron microscopy. Material properties were influenced by the consolidation processes. The best results were achieved by SPS process. The relative density was more than 95 %, Vickers hardness HV1/15 was over 227, elastic modulus was over 143 GPa, and homogeneous microstructure was revealed. These good properties can contribute to higher lifetime of arcing contacts under severe working conditions.

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.

PubMed

Chakrabarti, Somsubhra; Ginnaram, Sreekanth; Jana, Surajit; Wu, Zong-Yi; Singh, Kanishk; Roy, Anisha; Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Yang, Jer-Ren

2017-07-05

Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO x /TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO x film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba + and Ba 2+ through measuring H 2 O 2 with a low concentration of 1 nM in electrolyte/BaTiO x /SiO 2 /p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (<5 nm) switching material. By considering oxidation-reduction of the conducting filaments, the current-voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiO x /TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.

Remote switch actuator

DOEpatents

Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

2013-01-29

The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

NASA Technical Reports Server (NTRS)

Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.

2016-01-01

In this paper, a computational study is presented of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magneto-mechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.13; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping. For the cases considered, optimal resistive shunt damping performed considerably better than both voltage- and shunt-controlled stiffness switching.

High accuracy switched-current circuits using an improved dynamic mirror

NASA Technical Reports Server (NTRS)

Zweigle, G.; Fiez, T.

1991-01-01

The switched-current technique, a recently developed circuit approach to analog signal processing, has emerged as an alternative/compliment to the well established switched-capacitor circuit technique. High speed switched-current circuits offer potential cost and power savings over slower switched-capacitor circuits. Accuracy improvements are a primary concern at this stage in the development of the switched-current technique. Use of the dynamic current mirror has produced circuits that are insensitive to transistor matching errors. The dynamic current mirror has been limited by other sources of error including clock-feedthrough and voltage transient errors. In this paper we present an improved switched-current building block using the dynamic current mirror. Utilizing current feedback the errors due to current imbalance in the dynamic current mirror are reduced. Simulations indicate that this feedback can reduce total harmonic distortion by as much as 9 dB. Additionally, we have developed a clock-feedthrough reduction scheme for which simulations reveal a potential 10 dB total harmonic distortion improvement. The clock-feedthrough reduction scheme also significantly reduces offset errors and allows for cancellation with a constant current source. Experimental results confirm the simulated improvements.

Zero-bias microwave detectors based on array of nanorectifiers coupled with a dipole antenna

NASA Astrophysics Data System (ADS)

Kasjoo, Shahrir R.; Singh, Arun K.; Mat Isa, Siti S.; Ramli, Muhammad M.; Mohamad Isa, Muammar; Ahmad, Norhawati; Mohd Nor, Nurul I.; Khalid, Nazuhusna; Song, Ai Min

2016-04-01

We report on zero-bias microwave detection using a large array of unipolar nanodevices, known as the self-switching diodes (SSDs). The large array was realized in a single lithography step without the need of interconnection layers, hence allowing for a simple and low-cost fabrication process. The SSD array was coupled with a narrowband dipole antenna with a resonant frequency of 890 MHz, to form a simple rectenna (rectifying antenna). The extrinsic voltage responsivity and noise-equivalent-power (NEP) of the rectenna were ∼70 V/W and ∼0.18 nW/Hz1/2, respectively, measured in the far-field region at unbiased condition. Nevertheless, the estimated intrinsic voltage responsivity can achieve up to ∼5 kV/W with NEP of ∼2.6 pW/Hz1/2.

Control strategy based on SPWM switching patterns for grid connected photovoltaic inverter

NASA Astrophysics Data System (ADS)

Hassaine, L.; Mraoui, A.

2017-02-01

Generally, for lower installation of photovoltaic systems connected to the grid, pulse width modulation (PWM) is a widely used technique for controlling the voltage source inverters injects currents into the grid. The current injected must be sinusoidal with reduced harmonic distortion. In this paper, a digital implementation of a control strategy based on PWM switching patterns for an inverter for photovoltaic system connected to the grid is presented. This strategy synchronize a sinusoidal inverter output current with a grid voltage The digital implementation of the proposed PWM switching pattern when is compared with the conventional one exhibit the advantage: Simplicity, reduction of the memory requirements and power calculation for the control

Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2017-01-01

In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a Ni/Si3N4/Si structure. The abrupt, step-like gradual and continuous gradual reset transitions are largely determined by the low-resistance state (LRS). For abrupt reset switching, the large conducting path shows ohmic behavior or has a weak nonlinear current-voltage (I-V) characteristics in the LRS. For gradual switching, including both the step-like and continuous reset types, trap-assisted direct tunneling is dominant in the low-voltage regime, while trap-assisted Fowler-Nordheim tunneling is dominant in the high-voltage regime, thus causing nonlinear I-V characteristics. More importantly, we evaluate the multi-level capabilities of the two different gradual switching types, including both step-like and continuous reset behavior, using identical and incremental voltage conditions. Finer control of the conductance level with good uniformity is achieved in continuous gradual reset switching when compared to that in step-like gradual reset switching. For continuous reset switching, a single conducting path, which initially has a tunneling gap, gradually responds to pulses with even and identical amplitudes, while for step-like reset switching, the multiple conducting paths only respond to incremental pulses to obtain effective multi-level states.

A Smart Load Interface and Voltage Regulator for Electrostatic Vibration Energy Harvester

NASA Astrophysics Data System (ADS)

Bedier, Mohammed; Basset, Philippe; Galayko, Dimitri

2016-11-01

This paper presents a new implementation in ams 0.35μm HV technology of a complete energy management system for an electrostatic vibrational energy harvester (e-VEH). It is based on the Bennet's doubler architecture and includes a load voltage regulator (LVR) and a smart Load Interface (LI) that are self-controlled with internal voltages for maximum power point tracking (MMPT). The CMOS implementation makes use of an energy harvester that is capable of producing up to 1.8μW at harmonic excitation, given its internal voltage is kept within its optimum. An intermediate LI stage and its controller makes use of a high side switch with zero static power level shifter, and a low power hysteresis comparator. A full circuit level simulation with a VHDL-AMS model of the e-VEH presented was successfully achieved, indicating that the proposed load interface controller consumes less than 100nW average power. Moreover, a LVR regulates the buffer and discharge the harvested energy into a generic resistive load maintaining the voltage within a nominal value of 2 Volts.

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Tunable magnetization of infrared epsilon-near-zero media via field-effect modulation

NASA Astrophysics Data System (ADS)

Salary, Mohammad Mahdi; Mosallaei, Hossein

2018-04-01

In this letter, we demonstrate that field effect modulation enables electrical tuning of the effective permeability of epsilon-near-zero (ENZ) media at infrared frequencies. In particular, hexagonal silicon carbide (6H-SiC) is incorporated as an epsilon-near-zero host in a gated 6H-SiC/SiO2/Si heterostructure. The change in the applied voltage leads to a change in the carrier concentration of the accumulation layer formed at the interface of 6H-SiC and SiO2 which can alter the effective permeability of the heterostructure by virtue of the photonic doping effect. We will rigorously model and analyze the structure by linking charge transport and electromagnetic models. The presented mechanism allows for tuning the impedance and magnetization of ENZ materials in real-time while capturing extreme cases of epsilon-and-mu-near-zero and magnetic conductor. As such, it can be used for various applications such as real-time engineering of thermal emission, dynamic switching, reconfigurable tunneling, and holography.

Double-injection, deep-impurity switch development

NASA Technical Reports Server (NTRS)

Whitson, D. W.

1985-01-01

The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

NASA Technical Reports Server (NTRS)

Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.

2016-01-01

This paper presents a computational study of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magnetomechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.25; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping.

A solid-state dielectric elastomer switch for soft logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chau, Nixon; Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A.

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease ofmore » manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.« less

Design of DC-contact RF MEMS switch with temperature stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Junfeng; Nanjing Electronic Devices Institute, Nanjing, 210016; Li, Zhiqun, E-mail: zhiqunli@seu.edu.cn

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C formore » 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.« less

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

NASA Astrophysics Data System (ADS)

Meng, Jianwei; Jiang, Jun; Geng, Wenping; Chen, Zhihui; Zhang, Wei; Jiang, Anquan

2015-02-01

We fabricated (00l) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm2 for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm2 for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up-negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (Pf-Vf) hysteresis loops in both semiconducting thin films. Pf-Vf hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

Flexible, ferroelectric nanoparticle doped polymer dispersed liquid crystal devices for lower switching voltage and nanoenergy generation

NASA Astrophysics Data System (ADS)

Nimmy John, V.; Varanakkottu, Subramanyan Namboodiri; Varghese, Soney

2018-06-01

Flexible polymer dispersed liquid crystal (F-PDLC) devices were fabricated using transparent conducting ITO/PET film. Polymerization induced phase separation (PIPS) method was used for pure and ferroelectric BaTiO3 (BTO) and ZnO doped PDLC devices. The distribution of nanoparticles in the PDLC and the formation of micro cavities were studied using field emission scanning electron microscopy (FESEM). It was observed that the addition of ferroelectric BTO nanoparticles has reduced the threshold voltage (Vth) and saturation voltage (Vsat) of FNP-PDLC by 85% and 41% respectively due to the spontaneous polarization of ferroelectric nanoparticles. The ferroelectric properties of BTO and ZnO in the fabricated devices were investigated using dynamic contact electrostatic force microscopy (DC EFM). Flexing the device can generate a potential due to the piezo-tribo electric effect of the ferroelectric nanomaterial doped in the PDLC matrix, which could be utilized as an energy generating system. The switching voltage after multiple flexing was also studied and found to be in par with non-flexing situations.

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

Harmonic Optimization in Voltage Source Inverter for PV Application using Heuristic Algorithms

NASA Astrophysics Data System (ADS)

Kandil, Shaimaa A.; Ali, A. A.; El Samahy, Adel; Wasfi, Sherif M.; Malik, O. P.

2016-12-01

Selective Harmonic Elimination (SHE) technique is the fundamental switching frequency scheme that is used to eliminate specific order harmonics. Its application to minimize low order harmonics in a three level inverter is proposed in this paper. The modulation strategy used here is SHEPWM and the nonlinear equations, that characterize the low order harmonics, are solved using Harmony Search Algorithm (HSA) to obtain the optimal switching angles that minimize the required harmonics and maintain the fundamental at the desired value. Total Harmonic Distortion (THD) of the output voltage is minimized maintaining selected harmonics within allowable limits. A comparison has been drawn between HSA, Genetic Algorithm (GA) and Newton Raphson (NR) technique using MATLAB software to determine the effectiveness of getting optimized switching angles.

Lower-Order Compensation Chain Threshold-Reduction Technique for Multi-Stage Voltage Multipliers.

PubMed

Dell' Anna, Francesco; Dong, Tao; Li, Ping; Wen, Yumei; Azadmehr, Mehdi; Casu, Mario; Berg, Yngvar

2018-04-17

This paper presents a novel threshold-compensation technique for multi-stage voltage multipliers employed in low power applications such as passive and autonomous wireless sensing nodes (WSNs) powered by energy harvesters. The proposed threshold-reduction technique enables a topological design methodology which, through an optimum control of the trade-off among transistor conductivity and leakage losses, is aimed at maximizing the voltage conversion efficiency (VCE) for a given ac input signal and physical chip area occupation. The conducted simulations positively assert the validity of the proposed design methodology, emphasizing the exploitable design space yielded by the transistor connection scheme in the voltage multiplier chain. An experimental validation and comparison of threshold-compensation techniques was performed, adopting 2N5247 N-channel junction field effect transistors (JFETs) for the realization of the voltage multiplier prototypes. The attained measurements clearly support the effectiveness of the proposed threshold-reduction approach, which can significantly reduce the chip area occupation for a given target output performance and ac input signal.

Piezo Voltage Controlled Planar Hall Effect Devices

PubMed Central

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-01-01

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

Piezo Voltage Controlled Planar Hall Effect Devices.

PubMed

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Delta connected resonant snubber circuit

DOEpatents

Lai, J.S.; Peng, F.Z.; Young, R.W. Sr.; Ott, G.W. Jr.

1998-01-20

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 36 figs.

Delta connected resonant snubber circuit

DOEpatents

Lai, Jih-Sheng; Peng, Fang Zheng; Young, Sr., Robert W.; Ott, Jr., George W.

1998-01-01

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Voltage controlled current source

DOEpatents

Casne, Gregory M.

1992-01-01

A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

NASA Astrophysics Data System (ADS)

Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

1996-02-01

Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

Automatic voltage imbalance detector

DOEpatents

Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

1984-01-01

A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

Analysis and development of fourth order LCLC resonant based capacitor charging power supply for pulse power applications.

PubMed

Naresh, P; Hitesh, C; Patel, A; Kolge, T; Sharma, Archana; Mittal, K C

2013-08-01

A fourth order (LCLC) resonant converter based capacitor charging power supply (CCPS) is designed and developed for pulse power applications. Resonant converters are preferred t utilize soft switching techniques such as zero current switching (ZCS) and zero voltage switching (ZVS). An attempt has been made to overcome the disadvantages in 2nd and 3rd resonant converter topologies; hence a fourth order resonant topology is used in this paper for CCPS application. In this paper a novel fourth order LCLC based resonant converter has been explored and mathematical analysis carried out to calculate load independent constant current. This topology provides load independent constant current at switching frequency (fs) equal to resonant frequency (fr). By changing switching condition (on time and dead time) this topology has both soft switching techniques such as ZCS and ZVS for better switching action to improve the converter efficiency. This novel technique has special features such as low peak current through switches, DC blocking for transformer, utilizing transformer leakage inductance as resonant component. A prototype has been developed and tested successfully to charge a 100 μF capacitor to 200 V.

High-Voltage MOSFET Switching Circuit

NASA Technical Reports Server (NTRS)

Jensen, Kenneth A.

1995-01-01

Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

NASA Technical Reports Server (NTRS)

Petrick, David J. (Inventor)

2017-01-01

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

PubMed

Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

2018-01-01

Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Composite Material Switches

NASA Technical Reports Server (NTRS)

Javadi, Hamid (Inventor)

2001-01-01

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Composite Material Switches

NASA Technical Reports Server (NTRS)

Javadi, Hamid (Inventor)

2002-01-01

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Low mass MEMS/NEMS switch for a substitute of CMOS transistor using single-walled carbon nanotube thin film

NASA Astrophysics Data System (ADS)

Jang, Min-Woo

Power dissipation is a key factor for mobile devices and other low power applications. Complementary metal oxide semiconductor (CMOS) is the dominant integrated circuit (IC) technology responsible for a large part of this power dissipation. As the minimum feature size of CMOS devices enters into the sub 50 nanometer (nm) regime, power dissipation becomes much worse due to intrinsic physical limits. Many approaches have been studied to reduce power dissipation of deeply scaled CMOS ICs. One possible candidate is the electrostatic electromechanical switch, which could be fabricated with conventional CMOS processing techniques. They have critical advantages compared to CMOS devices such as almost zero standby leakage in the off-state due to the absence of a pn junction and a gate oxide, as well as excellent drive current in the on-state due to a metallic channel. Despite their excellent standby power dissipation, the electrostatic MEMS/NEMS switches have not been considered as a viable replacement for CMOS devices due to their large mechanical delay. Moreover, previous literature reveals that their pull-in voltage and switching speed are strongly proportional to each other. This reduces their potential advantage. However, in this work, we theoretically and experimentally demonstrated that the use of single-walled carbon nanotube (SWNT) with very low mass density and strong mechanical properties could provide a route to move off of the conventional trend with respect to the pull-in voltage / switching speed tradeoff observed in the literature. We fabricated 2-terminal fixed- beam switches with aligned composite SWNT thin films. In this work, layer-by-layer (LbL) self-assembly and dielectrophoresis were selected for aligned-composite SWNT thin film deposition. The dense membranes were successfully patterned to form submicron beams by e-beam lithography and oxygen plasma etching. Fixed-fixed beam switches using these membranes successfully operated with approximately 600

Analysis of optical route in a micro high-speed magneto-optic switch

NASA Astrophysics Data System (ADS)

Weng, Zihua; Yang, Guoguang; Huang, Yuanqing; Chen, Zhimin; Zhu, Yun; Wu, Jinming; Lin, Shufen; Mo, Weiping

2005-02-01

A novel micro high-speed 2x2 magneto-optic switch and its optical route, which is used in high-speed all-optical communication network, is designed and analyzed in this paper. The study of micro high-speed magneto-optic switch mainly involves the optical route and high-speed control technique design. The optical route design covers optical route design of polarization in optical switch, the performance analysis and material selection of magneto-optic crystal and magnetic path design in Faraday rotator. The research of high-speed control technique involves the study of nanosecond pulse generator, high-speed magnetic field and its control technique etc. High-speed current transients from nanosecond pulse generator are used to switch the magnetization of the magneto-optic crystal, which propagates a 1550nm optical beam. The optical route design schemes and electronic circuits of high-speed control technique are both simulated on computer and test by the experiments respectively. The experiment results state that the nanosecond pulse generator can output the pulse with rising edge time 3~35ns, voltage amplitude 10~90V and pulse width 10~100ns. Under the control of CPU singlechip, the optical beam can be stably switched and the switching time is less than 1μs currently.

A test technique for measuring lightning-induced voltages on aircraft electrical circuits

NASA Technical Reports Server (NTRS)

Walko, L. C.

1974-01-01

The development of a test technique used for the measurement of lightning-induced voltages in the electrical circuits of a complete aircraft is described. The resultant technique utilizes a portable device known as a transient analyzer capable of generating unidirectional current impulses similar to lightning current surges, but at a lower current level. A linear relationship between the magnitude of lightning current and the magnitude of induced voltage permitted the scaling up of measured induced values to full threat levels. The test technique was found to be practical when used on a complete aircraft.

Application of active electrode compensation to perform continuous voltage-clamp recordings with sharp microelectrodes.

PubMed

Gómez-González, J F; Destexhe, A; Bal, T

2014-10-01

Electrophysiological recordings of single neurons in brain tissues are very common in neuroscience. Glass microelectrodes filled with an electrolyte are used to impale the cell membrane in order to record the membrane potential or to inject current. Their high resistance induces a high voltage drop when passing current and it is essential to correct the voltage measurements. In particular, for voltage clamping, the traditional alternatives are two-electrode voltage-clamp technique or discontinuous single electrode voltage-clamp (dSEVC). Nevertheless, it is generally difficult to impale two electrodes in a same neuron and the switching frequency is limited to low frequencies in the case of dSEVC. We present a novel fully computer-implemented alternative to perform continuous voltage-clamp recordings with a single sharp-electrode. To reach such voltage-clamp recordings, we combine an active electrode compensation algorithm (AEC) with a digital controller (AECVC). We applied two types of control-systems: a linear controller (proportional plus integrative controller) and a model-based controller (optimal control). We compared the performance of the two methods to dSEVC using a dynamic model cell and experiments in brain slices. The AECVC method provides an entirely digital method to perform continuous recording and smooth switching between voltage-clamp, current clamp or dynamic-clamp configurations without introducing artifacts.

A high voltage dielectrically isolated smart power technology based on silicon direct bonding

NASA Astrophysics Data System (ADS)

Macary, Veronique

1992-09-01

The feasibility of a dielectrically isolated technology based on the silicon direct bonding technique, for high voltage smart power applications in the 1000 to 1550 V/1 to 20 A range, where a vertical power switch is necessary, is investigated and demonstrated. Static and dynamic isolation of the low voltage circuitry integrated beside the vertical power transistor is the main concern of this family of circuits. The dielectric isolation offers better protection to the low voltage part than does the junction isolation, because of the elimination of the parasitic bipolar transistor inherent to the latter isolation technique. Silicon direct bonding provides a cost effective way to obtain a buried oxide isolation layer. In addition, the application requires a Si/Si bonded area in the active region of the vertical power switch. Strong influence of the prebonding cleaning in the electrical characteristics of the Si/Si interface is pointed out, and presence of crystalline defects is assumed to be at the origin of electrical failures. The main problems of silicon direct bonding process compatibility with standard processes were overcome, and a complete process flow, including the simultaneous integration of a vertical power bipolar transistor together with a bipolar control circuitry, was validated. Using a peripheral biased ring is shown to provide an easy way to optimize high voltage termination for the smart power circuit, while adding a non-additional technological step. This technique was studied by dimensional electrical simulations (BIDIM2 software), as well as analytically computed.

Maximum voltage gradient technique for optimization of ablation for typical atrial flutter with zero-fluoroscopy approach.

PubMed

Deutsch, Karol; Śledź, Janusz; Mazij, Mariusz; Ludwik, Bartosz; Labus, Michał; Karbarz, Dariusz; Pasicka, Bernadetta; Chrabąszcz, Michał; Śledź, Arkadiusz; Klank-Szafran, Monika; Vitali-Sendoz, Laura; Kameczura, Tomasz; Śpikowski, Jerzy; Stec, Piotr; Ujda, Marek; Stec, Sebastian

2017-06-01

Radiofrequency catheter ablation (RFCA) is an established effective method for the treatment of typical cavo-tricuspid isthmus (CTI)-dependent atrial flutter (AFL). The introduction of 3-dimensional electro-anatomic systems enables RFCA without fluoroscopy (No-X-Ray [NXR]). The aim of this study was to evaluate the feasibility and effectiveness of CTI RFCA during implementation of the NXR approach and the maximum voltage-guided (MVG) technique for ablation of AFL.Data were obtained from prospective standardized multicenter ablation registry. Consecutive patients with the first RFCA for CTI-dependent AFL were recruited. Two navigation approaches (NXR and fluoroscopy based as low as reasonable achievable [ALARA]) and 2 mapping and ablation techniques (MVG and pull-back technique [PBT]) were assessed. NXR + MVG (n  =  164; age: 63.7 ± 9.5; 30% women), NXR + PBT (n  =  55; age: 63.9 ± 10.7; 39% women); ALARA + MVG (n  =  36; age: 64.2 ± 9.6; 39% women); and ALARA + PBT (n  =  205; age: 64.7 ± 9.1; 30% women) were compared, respectively. All groups were simplified with a 2-catheter femoral approach using 8-mm gold tip catheters (Osypka AG, Germany or Biotronik, Germany) with 15 min of observation. The MVG technique was performed using step-by-step application by mapping the largest atrial signals within the CTI.Bidirectional block in CTI was achieved in 99% of all patients (P  =  NS, between groups). In NXR + MVG and NXR + PBT groups, the procedure time decreased (45.4 ± 17.6 and 47.2 ± 15.7 min vs. 52.6 ± 23.7 and 59.8 ± 24.0 min, P < .01) as compared to ALARA + MVG and ALARA + PBT subgroups. In NXR + MVG and NXR + PBT groups, 91% and 98% of the procedures were performed with complete elimination of fluoroscopy. The NXR approach was associated with a significant reduction in fluoroscopy exposure (from 0.2 ± 1.1 [NXR + PBT] and 0.3 ± 1.6 [NXR + MVG] to 7.7 ± 6.0 min [ALARA + MVG] and 9

Maximum voltage gradient technique for optimization of ablation for typical atrial flutter with zero-fluoroscopy approach

PubMed Central

Deutsch, Karol; Śledź, Janusz; Mazij, Mariusz; Ludwik, Bartosz; Labus, Michał; Karbarz, Dariusz; Pasicka, Bernadetta; Chrabąszcz, Michał; Śledź, Arkadiusz; Klank-Szafran, Monika; Vitali-Sendoz, Laura; Kameczura, Tomasz; Śpikowski, Jerzy; Stec, Piotr; Ujda, Marek; Stec, Sebastian

2017-01-01

Abstract Radiofrequency catheter ablation (RFCA) is an established effective method for the treatment of typical cavo-tricuspid isthmus (CTI)-dependent atrial flutter (AFL). The introduction of 3-dimensional electro-anatomic systems enables RFCA without fluoroscopy (No-X-Ray [NXR]). The aim of this study was to evaluate the feasibility and effectiveness of CTI RFCA during implementation of the NXR approach and the maximum voltage-guided (MVG) technique for ablation of AFL. Data were obtained from prospective standardized multicenter ablation registry. Consecutive patients with the first RFCA for CTI-dependent AFL were recruited. Two navigation approaches (NXR and fluoroscopy based as low as reasonable achievable [ALARA]) and 2 mapping and ablation techniques (MVG and pull-back technique [PBT]) were assessed. NXR + MVG (n  =  164; age: 63.7 ± 9.5; 30% women), NXR + PBT (n  =  55; age: 63.9 ± 10.7; 39% women); ALARA + MVG (n  =  36; age: 64.2 ± 9.6; 39% women); and ALARA + PBT (n  =  205; age: 64.7 ± 9.1; 30% women) were compared, respectively. All groups were simplified with a 2-catheter femoral approach using 8-mm gold tip catheters (Osypka AG, Germany or Biotronik, Germany) with 15 min of observation. The MVG technique was performed using step-by-step application by mapping the largest atrial signals within the CTI. Bidirectional block in CTI was achieved in 99% of all patients (P  =  NS, between groups). In NXR + MVG and NXR + PBT groups, the procedure time decreased (45.4 ± 17.6 and 47.2 ± 15.7 min vs. 52.6 ± 23.7 and 59.8 ± 24.0 min, P < .01) as compared to ALARA + MVG and ALARA + PBT subgroups. In NXR + MVG and NXR + PBT groups, 91% and 98% of the procedures were performed with complete elimination of fluoroscopy. The NXR approach was associated with a significant reduction in fluoroscopy exposure (from 0.2 ± 1.1 [NXR + PBT] and 0.3 ± 1.6 [NXR + MVG] to 7.7 ± 6.0 min [ALARA

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the widemore » bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.« less

Resistance switching in polyvinylidene fluoride (PVDF) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramod, K.; Sahu, Binaya Kumar; Gangineni, R. B., E-mail: rameshg.phy@pondiuni.edu.in

2015-06-24

Polyvinylidene fluoride (PDVF), one of the best electrically active polymer material & an interesting candidate to address the electrical control of its functional properties like ferroelectricity, piezoelectricity, pyroelectricity etc. In the current work, with the help of spin coater and DC magnetron sputtering techniques, semi-crystallized PVDF thin films prominent in alpha phase is prepared in capacitor like structure and their electrical characterization is emphasized. In current-voltage (I-V) and resistance-voltage (R-V) measurements, clear nonlinearity and resistance switching has been observed for films prepared using 7 wt% 2-butanone and 7 wt% Dimethyl Sulfoxide (DMSO) solvents.

Uncertainty quantification analysis of the dynamics of an electrostatically actuated microelectromechanical switch model

NASA Astrophysics Data System (ADS)

Snow, Michael G.; Bajaj, Anil K.

2015-08-01

This work presents an uncertainty quantification (UQ) analysis of a comprehensive model for an electrostatically actuated microelectromechanical system (MEMS) switch. The goal is to elucidate the effects of parameter variations on certain key performance characteristics of the switch. A sufficiently detailed model of the electrostatically actuated switch in the basic configuration of a clamped-clamped beam is developed. This multi-physics model accounts for various physical effects, including the electrostatic fringing field, finite length of electrodes, squeeze film damping, and contact between the beam and the dielectric layer. The performance characteristics of immediate interest are the static and dynamic pull-in voltages for the switch. Numerical approaches for evaluating these characteristics are developed and described. Using Latin Hypercube Sampling and other sampling methods, the model is evaluated to find these performance characteristics when variability in the model's geometric and physical parameters is specified. Response surfaces of these results are constructed via a Multivariate Adaptive Regression Splines (MARS) technique. Using a Direct Simulation Monte Carlo (DSMC) technique on these response surfaces gives smooth probability density functions (PDFs) of the outputs characteristics when input probability characteristics are specified. The relative variation in the two pull-in voltages due to each of the input parameters is used to determine the critical parameters.

Bi-directional power control system for voltage converter

DOEpatents

Garrigan, Neil Richard; King, Robert Dean; Schwartz, James Edward

1999-01-01

A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals.

Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay

NASA Technical Reports Server (NTRS)

Spencer, Michael G. (Inventor); Maserjian, Joseph (Inventor)

1995-01-01

A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f sub 0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of N f sub 0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.

Applications of Non-linearities in RF MEMS Switches and Resonators

NASA Astrophysics Data System (ADS)

Vummidi Murali, Krishna Prasad

resonators are studied. Gold electroplated fixed-fixed beams were fabricated to test the phenomenon of dynamic (or resonant) pull-in in shunt switches. The dynamic pull-in phenomenon was also tested on commercially fabricated lateral switches. It is shown that the resonant pull-in technique reduces the overall voltage required to actuate the switch. There is an additional reduction of total actuation voltage possible via applying an AC actuation signal at the correct non-linear resonant frequency. The demonstrated best case savings from operating at the non-linear resonance is 50% (for the lateral switch) and 60% (for the vertical switch) as compared to 25% and 40% respectively using a fixed frequency approach. However, the timing response for resonant pull-in has been experimentally shown to be slower than the static actuation. To reduce the switching time, a shifted-frequency method is proposed where the excitation frequency is shifted up or down by a discrete amount deltaO after a brief hold time. It was theoretically shown that the shifted-frequency method enables a minimum realizable switching time comparable to the static switching time for a given set of actuation frequencies. The influence of VDC on the effective non-linearities of a fixed-fixed beam is also studied. Based on the dimensions of the resonator and the type of resonance there is a certain VDC,Lin where the response is near linear (S ≈ 0). In the near-linear domain, the dynamic pull-in is the only upper bound to the amplitude of vibrations, and hence the amplitude of output current, thereby maximizing the power handling capacity of the resonator. Apart from maximizing the output current, it is essential to reduce the amplitude and phase variations of the displacement response which are due to noise mixing into frequency of interest, and are eventually manifested as output phase noise due to capacitive current nonlinearity. Two major aliasing schemes were analyzed and it was shown that the capacitive

High-power microstrip RF switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1971-01-01

A microstrip-type single-pole double-throw (SPDT) switch whose RF and bias portions contain only a metallized alumina substrate and two PIN diodes has been developed. A technique developed to eliminate the dc blocking capacitors needed for biasing the diodes is described. These capacitors are extra components and could lower the reliability significantly. An SPDT switch fabricated on a 5.08 x 5.08 x 0.127-cm (2 x 2 x 0.050-in.) substrate has demonstrated an RF power-handling capability greater than 50 W at S-band. The insertion loss is less than 0.25 db and the input-to-off port isolation is greater than 36 db over a bandwidth larger than 30 MHz. The input voltage standing-wave ratio is lower than 1.07 over the same bandwidth. Theoretical development of the switch characteristics and experimental results, which are in good agreement with theory, are presented.

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

Low pressure switches and magnetic switches were tested as possible replacements for the high pressure switches currently used on Experimental Test Accelerator and Advanced Test Accelerator. When the low pressure switch is used with a low impedance transmission line, runaway electrons form a pinched electron beam which damages the anode. The use of the low pressure switch as the first switch in the pulsed power chain was tested; i.e., the switch would be used to connect a charged capacitor across the primary winding of a step up transformer. An inductor with a saturating core is connected in series so that, initially, there is a large inductive voltage drop. As a result, there is small voltage across the switch. By the time the inductor core saturates, the switch has developed sufficient ionization so that the switch voltage remains small, even with peak current, and an electron beam is not produced.

Switching dynamics of TaOx-based threshold switching devices

NASA Astrophysics Data System (ADS)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

Triggered plasma opening switch

DOEpatents

Mendel, Clifford W.

1988-01-01

A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

Switching synchronization in one-dimensional memristive networks

NASA Astrophysics Data System (ADS)

Slipko, Valeriy A.; Shumovskyi, Mykola; Pershin, Yuriy V.

2015-11-01

We report on a switching synchronization phenomenon in one-dimensional memristive networks, which occurs when several memristive systems with different switching constants are switched from the high- to low-resistance state. Our numerical simulations show that such a collective behavior is especially pronounced when the applied voltage slightly exceeds the combined threshold voltage of memristive systems. Moreover, a finite increase in the network switching time is found compared to the average switching time of individual systems. An analytical model is presented to explain our observations. Using this model, we have derived asymptotic expressions for memory resistances at short and long times, which are in excellent agreement with results of our numerical simulations.

Joint kinetics in rearfoot versus forefoot running: implications of switching technique.

PubMed

Stearne, Sarah M; Alderson, Jacqueline A; Green, Benjamin A; Donnelly, Cyril J; Rubenson, Jonas

2014-08-01

To better understand the mechanical factors differentiating forefoot and rearfoot strike (RFS) running, as well as the mechanical consequences of switching techniques, we assessed lower limb joint kinetics in habitual and imposed techniques in both groups. All participants performed both RFS and forefoot strike (FFS) techniques on an instrumented treadmill at 4.5 m·s while force and kinematic data were collected. Total (sum of ankle, knee, and hip) lower limb work and average power did not differ between habitual RFS and FFS runners. However, moments, negative work and negative instantaneous and average power during stance were greater at the knee in RFS and at the ankle in FFS techniques. When habitual RFS runners switched to an imposed FFS, they were able to replicate the sagittal plane mechanics of a habitual FFS; however, the ankle internal rotation moment was increased by 33%, whereas the knee abduction moments were not reduced, remaining 48.5% higher than a habitual FFS. In addition, total positive and negative lower limb average power was increased by 17% and 9%, respectively. When habitual FFS runners switched to an imposed RFS, they were able to match the mechanics of habitual RFS runners with the exception of knee abduction moments, which remained 38% lower than a habitual RFS and, surprisingly, a reduction of total lower limb positive average power of 10.5%. There appears to be no clear overall mechanical advantage of a habitual FFS or RFS. Switching techniques may have different injury implications given the altered distribution in loading between joints but should be weighed against the overall effects on limb mechanics; adopting an imposed RFS may prove the most beneficial given the absence of any clear mechanical performance decrements.

High voltage pulse conditioning

DOEpatents

Springfield, Ray M.; Wheat, Jr., Robert M.

1990-01-01

Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

Auxiliary resonant DC tank converter

DOEpatents

Peng, Fang Z.

2000-01-01

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

MEMS micromirrors for optical switching in multichannel spectrophotometers

NASA Astrophysics Data System (ADS)

Tuantranont, Adisorn; Lomas, Tanom; Bright, Victor M.

2004-04-01

This paper reports for the first time that a novel MEMS-based micromirror switch has successfully demonstrated for optical switching in a multi-channel fiber optics spectrophotometer system. The conventional optomechanical fiber optic switches for multi-channel spectrophotometers available in market are bulky, slow, low numbers of channels and expensive. Our foundry MEMS-based micromirror switch designed for integrating with commercially available spectrophotometers offers more compact devices, increased number of probing channels, higher performance and cheaper. Our MEMS-based micromirror switch is a surface micromachined mirror fabricated through MUMPs foundry. The 280 μm x 280 μm gold coated mirror is suspended by the double-gimbal structure for X and Y axis scanning. Self-assembly by solders is used to elevate the torsion mirror 30 μm over the substrate to achieve large scan angle. The solder self-assembly approach dramatically reduces the time to assembly the switch. The scan mirror is electrostatically controlled by applying voltages. The individual probing signal from each probing head is guided by fibers with collimated lenses and incidents on the center of the mirror. The operating scan angle is in the range of 3.5 degrees with driving voltage of 0-100 V. The fastest switching time of 4 millisecond (1 ms rise time and 3 ms fall time) is measured corresponding to the maximum speed of the mirror of 0.25 kHz when the mirror is scanning at +/- 1.5 degrees. The micromirror switch is packaged with a multi-mode fiber bundle using active alignment technique. A centered fiber is the output fiber that is connected to spectrophotometer. Maximum insertion loss of 5 dB has been obtained. The accuracy of measured spectral data is equivalent to the single channel spectrophotometer with a small degradation on probing signal due to fiber coupling.

Improved Electro-Optical Switches

NASA Technical Reports Server (NTRS)

Nelson, Bruce N.; Cooper, Ronald F.

1994-01-01

Improved single-pole, double-throw electro-optical switches operate in switching times less than microsecond developed for applications as optical communication systems and networks of optical sensors. Contain no moving parts. In comparison with some prior electro-optical switches, these are simpler and operate with smaller optical losses. Beam of light switched from one output path to other by applying, to electro-optical crystal, voltage causing polarization of beam of light to change from vertical to horizontal.

Manually operated coded switch

DOEpatents

Barnette, Jon H.

1978-01-01

The disclosure relates to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made.

Solid state switch

DOEpatents

Merritt, Bernard T.; Dreifuerst, Gary R.

1994-01-01

A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

Low voltage arc formation in railguns

DOEpatents

Hawke, R.S.

1985-08-05

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Low voltage arc formation in railguns

DOEpatents

Hawke, Ronald S.

1987-01-01

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Low voltage arc formation in railguns

DOEpatents

Hawke, R.S.

1987-11-17

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile. 2 figs.

Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory.

PubMed

Ye, Yalong; Zhao, Jie; Xiao, Li; Cheng, Baochang; Xiao, Yanhe; Lei, Shuijin

2018-06-06

Hybrid nanostructures can show enormous potential in different areas because of their unique structural configurations. Herein, Fe@Al 2 O 3 hybrid nanotubes are constructed via a homogeneous coprecipitation method followed by subsequent annealing in a reducing atmosphere. The introduction of zero band gap Fe nanocrystals in the wall of ultrawide band gap Al 2 O 3 insulator nanotubes results in the formation of charge trap centers, and correspondingly a single hybrid nanotube-based two-terminal device can show reversible negative resistive switching (RS) characteristics with symmetrical negative differential resistance (NDR) at relatively high operation bias voltages. At a large bias voltage, holes and electrons can be injected into traps at two ends from electrodes, respectively, and then captured. The bias voltage dependence of asymmetrical filling of charges can lead to a reversible variation of built-in electromotive force, and therefore the symmetrical negative RS with NDR arises from two reversible back-to-back series bipolar RS. At a low readout voltage, the single Fe@Al 2 O 3 hybrid nanotube can show an excellent nonvolatile memory feature with a relatively large switching ratio of ∼30. The bias-governed reversible negative RS with superior stability, reversibility, nondestructive readout, and remarkable cycle performance makes it a potential candidate in next-generation erasable nonvolatile resistive random access memories.

Switching power pulse system

DOEpatents

Aaland, K.

1983-08-09

A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

Study of the generator/motor operation of induction machines in a high frequency link space power system

NASA Technical Reports Server (NTRS)

Lipo, Thomas A.; Sood, Pradeep K.

1987-01-01

Static power conversion systems have traditionally utilized dc current or voltage source links for converting power from one ac or dc form to another since it readily achieves the temporary energy storage required to decouple the input from the output. Such links, however, result in bulky dc capacitors and/or inductors and lead to relatively high losses in the converters due to stresses on the semiconductor switches. The feasibility of utilizing a high frequency sinusoidal voltage link to accomplish the energy storage and decoupling function is examined. In particular, a type of resonant six pulse bridge interface converter is proposed which utilizes zero voltage switching principles to minimize switching losses and uses an easy to implement technique for pulse density modulation to control the amplitude, frequency, and the waveshape of the synthesized low frequency voltage or current. Adaptation of the proposed topology for power conversion to single-phase ac and dc voltage or current outputs is shown to be straight forward. The feasibility of the proposed power circuit and control technique for both active and passive loads are verified by means of simulation and experiment.

Isolated and soft-switched power converter

DOEpatents

Peng, Fang Zheng; Adams, Donald Joe

2002-01-01

An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

Solid state switch

DOEpatents

Merritt, B.T.; Dreifuerst, G.R.

1994-07-19

A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

Piezoelectric MEMS switch to activate event-driven wireless sensor nodes

NASA Astrophysics Data System (ADS)

Nogami, H.; Kobayashi, T.; Okada, H.; Makimoto, N.; Maeda, R.; Itoh, T.

2013-09-01

We have developed piezoelectric microelectromechanical systems (MEMS) switches and applied them to ultra-low power wireless sensor nodes, to monitor the health condition of chickens. The piezoelectric switches have ‘S’-shaped piezoelectric cantilevers with a proof mass. Since the resonant frequency of the piezoelectric switches is around 24 Hz, we have utilized their superharmonic resonance to detect chicken movements as low as 5-15 Hz. When the vibration frequency is 4, 6 and 12 Hz, the piezoelectric switches vibrate at 0.5 m s-2 and generate 3-5 mV output voltages with superharmonic resonance. In order to detect such small piezoelectric output voltages, we employ comparator circuits that can be driven at low voltages, which can set the threshold voltage (Vth) from 1 to 31 mV with a 1 mV increment. When we set Vth at 4 mV, the output voltages of the piezoelectric MEMS switches vibrate below 15 Hz with amplitudes above 0.3 m s-2 and turn on the comparator circuits. Similarly, by setting Vth at 5 mV, the output voltages turn on the comparator circuits with vibrations above 0.4 m s-2. Furthermore, setting Vth at 10 mV causes vibrations above 0.5 m s-2 that turn on the comparator circuits. These results suggest that we can select small or fast chicken movements to utilize piezoelectric MEMS switches with comparator circuits.

Strategies for Voltage Control and Transient Stability Assessment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiskens, Ian A.

As wind generation grows, its influence on power system performance will becoming increasingly noticeable. Wind generation di ffers from traditional forms of generation in numerous ways though, motivating the need to reconsider the usual approaches to power system assessment and performance enhancement. The project has investigated the impact of wind generation on transient stability and voltage control, identifying and addressing issues at three distinct levels of the power system: 1) at the device level, the physical characteristics of wind turbine generators (WTGs) are quite unlike those of synchronous machines, 2) at the wind-farm level, the provision of reactive support ismore » achieved through coordination of numerous dissimilar devices, rather than straightforward generator control, and 3) from a systems perspective, the location of wind-farms on the sub-transmission network, coupled with the variability inherent in their power output, can cause complex voltage control issues. The project has sought to develop a thorough understanding of the dynamic behaviour of type-3 WTGs, and in particular the WECC generic model. The behaviour of such models is governed by interactions between the continuous dynamics of state variables and discrete events associated with limits. It was shown that these interactions can be quite complex, and may lead to switching deadlock that prevents continuation of the trajectory. Switching hysteresis was proposed for eliminating deadlock situations. Various type-3 WTG models include control blocks that duplicate integrators. It was shown that this leads to non-uniqueness in the conditions governing steady-state, and may result in pre- and post-disturbance equilibria not coinciding. It also gives rise to a zero eigenvalue in the linearized WTG model. In order to eliminate the anomalous behaviour revealed through this investigation, WECC has now released a new generic model for type-3 WTGs. Wind-farms typically incorporate a variety

An improved switching converter model using discrete and average techniques

NASA Technical Reports Server (NTRS)

Shortt, D. J.; Lee, F. C.

1982-01-01

The nonlinear modeling and analysis of dc-dc converters has been done by averaging and discrete-sampling techniques. The averaging technique is simple, but inaccurate as the modulation frequencies approach the theoretical limit of one-half the switching frequency. The discrete technique is accurate even at high frequencies, but is very complex and cumbersome. An improved model is developed by combining the aforementioned techniques. This new model is easy to implement in circuit and state variable forms and is accurate to the theoretical limit.

Comparative study of electrical and switch-skipping mechanical switch for self-powered SSHI in medium coupled piezoelectric vibration energy harvesters

NASA Astrophysics Data System (ADS)

Asanuma, H.; Sakamoto, K.; Komatsuzaki, T.; Iwata, Y.

2018-07-01

To increase output power for piezoelectric vibration energy harvesters, considerable attention has recently been focused on a self-powered synchronized switch harvesting on inductor (SSHI) technique employing an electrical and mechanical switch. However, there are two technical issues: in a medium or highly coupled harvester, the piezoelectric coupling force, which increases as the SSHI’s voltage increases, will reduce the harvester’s displacement and the resulting output power, and there are few reports comparing the performance of electrical switch SSHI (ESS) and mechanical switch SSHI (MSS) that include consideration of the piezoelectric coupling force. We developed a simulation technique that allows us to evaluate the output power considering the piezoelectric coupling force, and investigated the performance of stopper-based MSS and ESS, both numerically and experimentally. The numerical investigation predicted the following: (1) the output power for the ESS is lower than that for the MSS at acceleration lower than 3.5 m s‑2 and (2) intriguingly, the output power for the MSS continues to increase, whereas the peak–peak displacement remains constant. The experimental results showed behaviour similar to that of the numerical predictions. The results are attributed to the different switching strategies: the MSS turns on only when the harvester’s displacement exceeds the gap distance, while the ESS turns on at every maximum/minimum displacement.

Solid state remote circuit selector switch

NASA Technical Reports Server (NTRS)

Peterson, V. S.

1970-01-01

Remote switching circuit utilizes voltage logic to switch on desired circuit. Circuit controls rotating multi-range pressure transducers in jet engine testing and can be used in coded remote circuit activator where sequence of switching has to occur in defined length of time to prevent false or undesired circuit activation.

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

DOEpatents

Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

1998-01-01

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate

NASA Astrophysics Data System (ADS)

Smith, Shawn; Forrest, Stephen R.

2004-06-01

We present a simple, nonvolatile, write-once-read-many-times (WORM) memory device utilizing an organic-on-inorganic heterojunction (OI-HJ) diode with a conductive polymer fuse consisting of polyethylene dioxythiophene:polysterene sulfonic acid (PEDOT:PSS) forming one side of the rectifying junction. Current transients are used to change the fuse from a conducting to a nonconducting state to record a logical "1" or "0", while the nonlinearity of the OI-HJ allows for passive matrix memory addressing. The device switches at 2 and 4 V for 50 nm thick PEDOT:PSS films on p-type Si and n-type Si, respectively. This is significantly lower than the switching voltage used in PEDOT:PSS/p-i-n Si memory elements [J. Appl Phys. 94, 7811 (2003)]. The switching results in a permanent reduction of forward-bias current by approximately five orders of magnitude. These results suggest that the OI-HJ structure has potential for use in low-cost passive matrix WORM memories for archival storage applications.

A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

NASA Astrophysics Data System (ADS)

Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

2016-05-01

A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from -40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

High voltage photoconductive switch package

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caporaso, George J.

2016-11-22

A photoconductive switch having a wide bandgap material substrate between opposing electrodes, and a doped dielectric filler that is in contact with both the electrodes and the substrate at the triple point. The dielectric filler material is doped with a conductive material to make it partially or completely conducting, to minimize the field enhancement near the triple point both when the substrate is not conducting in the "off" state and when the substrate is rendered conducting by radiation in the "on" state.

Pseudo-spark switch (PSS) characteristics under different operation conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamad, B. H., E-mail: dr.bassmahussain@gmail.com; Ahmad, A. K., E-mail: ahmad.kamal@sc.nahrainuniv.edu.iq; Lateef, K. H., E-mail: kamalhlatif@yahoo.com

2016-08-15

The present paper concentrates on the characteristics of the pseudospark switch (PSS) designed in a previous work. The special characteristics of PSS make it a replacement for other high voltage switches such as thyratrons and ordinary high-pressure spark gaps. PSS is characterized by short rise time and small jitter time. The pseudo park chamber consists of two hollow cylindrical electrodes made of a stainless steel material (type 306L) separated by an insulator. The insulator used in our design is a glazed ceramic 70 mm in diameter and 3.5 mm in thickness. A PSS with an anode voltage of 29.2 kV, and a currentmore » of 3.6 kA and 11 ns rise time was achieved and used successfully at a repetition rate of about 2.2 kHz. A simple trigger circuit designed, built, and used effectively reaching more than 1.56 kV trigger pulse which is sufficient to ignite the argon gas inside the cathode to cause a breakdown. A non-inductive dummy load is designed to be a new technique to find the accurate value of the PSS inductance. A jitter time of ±10 ns pulses is observed to occur in a reliable manner for more than 6 h of continuous operation. In this research, the important parameters of this switch like rise time, peak current, and anode voltage were studied at various values of charging capacitance. The lifetime of this system is depending on the kind of the electrode material and on the type of insulation material in the main gap of the pseudospark switch.« less

Resonant snubber inverter

DOEpatents

Lai, Jih-Sheng; Young, Sr., Robert W.; Chen, Daoshen; Scudiere, Matthew B.; Ott, Jr., George W.; White, Clifford P.; McKeever, John W.

1997-01-01

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Resonant snubber inverter

DOEpatents

Lai, J.S.; Young, R.W. Sr.; Chen, D.; Scudiere, M.B.; Ott, G.W. Jr.; White, C.P.; McKeever, J.W.

1997-06-24

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 14 figs.

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Shuttle-promoted nano-mechanical current switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Taegeun, E-mail: tsong@ictp.it; Kiselev, Mikhail N.; Gorelik, Leonid Y.

2015-09-21

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instabilitymore » and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.« less

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

Single Active Switch PV Inverter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramanan, V. R.; Pan, Zhiguo

This report presents a new PV inverter topology that uses only one active switch instead of 7 active switches in a conventional PV inverter. It has a buck boost converter and operates at discontinuous current control mode, which can reduce the output stage from an active switch bridge to a thyristor bridge. This concept, if successfully demonstrated, may have great cost and size/weight benefits over conventional solutions. Since the proposed topology is completely different from the traditional boost converter plus voltage source inverter approach, there is no existing control/modulation scheme available. A new modulation scheme for both the main switchmore » and the thyristors has been developed. An active clamping circuit has also been proposed to reduce switching losses and voltage spike during the switching transient. A simulation model has been set up to validate the control algorithm and clamping circuit. Simulated results show that a proposed 10 kW PV inverter can reach 5% total harmonic distortion (THD), 98.8% peak efficiency with only one main active switch, and an inductor weighing less than 3 kg. Based on that, a 10 kW prototype converter has been designed and built.« less

Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

NASA Astrophysics Data System (ADS)

Barra, Anthony; Domann, John; Kim, Ki Wook; Carman, Greg

2018-03-01

A method to control antiferromagnetism using voltage-induced strain is proposed and theoretically examined. Voltage-induced magnetoelastic anisotropy is shown to provide sufficient torque to switch an antiferromagnetic domain 90° either from out of plane to in plane or between in-plane axes. Numerical results indicate that strain-mediated antiferromagnetic switching can occur in an 80-nm nanopatterned disk at frequencies approaching 1 THz but that the switching speed heavily depends on the system's mechanical design. Furthermore, the energy cost to induce magnetic switching is only 450 aJ, indicating that magnetoelastic control of antiferromagnetism is substantially more energy efficient than other approaches.

"Zero ischemia" partial nephrectomy: novel laparoscopic and robotic technique.

PubMed

Gill, Inderbir S; Eisenberg, Manuel S; Aron, Monish; Berger, Andre; Ukimura, Osamu; Patil, Mukul B; Campese, Vito; Thangathurai, Duraiyah; Desai, Mihir M

2011-01-01

Ischemic injury impacts renal function outcomes following partial nephrectomy. Efforts to minimize, better yet, eliminate renal ischemia are imperative. Describe a novel technique of "zero ischemia" laparoscopic (LPN) and robotic-assisted (RAPN) partial nephrectomy. Data were prospectively collected into an institutional review board-approved database. Fifteen consecutive patients underwent zero ischemia procedures: LPN (n=12), RAPN (n=3). Included were all candidates for LPN or RAPN, irrespective of tumor complexity, including tumors that were central (n=9; 60%), hilar (n=1), in solitary kidney (n=1), in patients with chronic kidney disease grade 3 or greater (n=3). Anesthesia-related monitoring included pulmonary artery catheter (ie, Swan-Ganz), transesophageal echocardiography, cerebral oximetry, electroencephalographic bispectral index, mixed venous oxygen measurements, and vigorous hydration/diuresis. Pharmacologically induced hypotension was carefully timed to correspond with excision of the deepest aspect of the tumor. Renal parenchymal reconstruction was completed under normotension, ensuring complete hemostasis. Intraoperative and early postoperative data were collected prospectively. All cases were successfully completed without hilar clamping. Ischemia time was zero in all cases. Median tumor size was 2.5 cm (range: 1-4); operative time was 3 h (range: 1.3-6); blood loss was 150 ml (range: 20-400); and hospital stay was 3 d (range: 2-19). Nadir mean arterial pressure ranged from 52-65 mm Hg (median: 60), typically for 1-5 min. No patient had intraoperative transfusion or complication, acute or delayed renal hemorrhage, or hypotension-related sequelae. Postoperative complications (n=5) included urine retention (n=1), septicemia from presumed prostatitis (n=1), atrial fibrillation (n=1), urine leak (n=2). Pathology confirmed renal cell carcinoma in 13 patients (87%), all with negative margins. Median pre- and postoperative serum creatinine (0.9 mg/dl and 0

Bi-directional power control system for voltage converter

DOEpatents

Garrigan, N.R.; King, R.D.; Schwartz, J.E.

1999-05-11

A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals. 10 figs.

Operation of a voltage source converter at increased utility voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaura, V.; Blasko, V.

1997-01-01

The operation of a voltage source converter (VSC) with regeneration capability, controllable power factor, and low distortion of utility currents is analyzed at increased utility voltage. Increase in the utility voltage causes a VSC to saturate and enter a nonlinear mode of operation. To operate under elevated utility, two steps are taken: (1) a pulse width modulation (PWM) algorithm is implemented which extends the linear region of operation by 15% and (2) a PWM saturation regulator is used to control the reactive current at higher utility voltages. The PWM algorithm reduces the switching losses by at least 33% and themore » effect of blanking time by one-third. All analytical results are experimentally verified on a 100 kW three-phase VSC.« less

System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

NASA Technical Reports Server (NTRS)

Lipo, Thomas A.; Alan, Irfan

1991-01-01

Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the

Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages

DOEpatents

Su, Gui-Jia [Knoxville, TN

2005-11-29

A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

Q-switched oscillation in thulium-doped fiber lasers using preloaded dynamic microbending technique

NASA Astrophysics Data System (ADS)

Sakata, H.; Takahashi, N.; Ushiro, Y.

2018-01-01

We demonstrate Q-switched pulse generation in thulium-doped fiber lasers by introducing piezoelectric-driven microbend with preloaded stress. We employed a pair of corrugated chips each attached on piezoelectric actuators (PAs) to clamp the fiber in a ring laser resonator. The thulium-doped fiber is pumped by a laser diode emitting at 1.63 μm and generates the Q-switched laser pulses at around 1.9 μm by switching off the PAs. The laser pulse performance is improved by optimizing the preload and switch-off period for the PAs. The Q-switched pulses with a peak power of 2.8 W and a pulsewidth of 900 ns are observed for a launched pump power of 161 mW. We expect that the in-fiber Q-switching technique will provide efficient laser systems for environmental sensing and medical applications.

High voltage generator

DOEpatents

Schwemin, A. J.

1959-03-17

A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

HIGH VOLTAGE GENERATOR

DOEpatents

Schwemin, A.J.

1959-03-17

A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

Radiometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strickland, J. I.

1985-07-02

A radiometer of the switched type has an R.F. switch connecting a detector selectively either to an antenna whose temperature (in terms of noise energy) is to be determined, or to a reference temperature, i.e. a resistive termination. The detector output is passed through an amplifier whose gain is switched between positive and negative values (for example +1 and -1) synchronously with the R.F. switch. The output of the switched gain amplifier is integrated to produce a rising voltage when the gain is positive and a falling one when it is negative. When it is positive the detector is connectedmore » to the antenna. By means of a zero crossing detector, a counter is started when this voltage crosses zero. After a fixed period, the R.F. switch and switched gain amplifier are reversed by the counter to cause the voltage to fall in accordance with the temperature of the resistive termination. The zero crossing detector and a counter measure the time interval until the voltage again crosses zero, such time interval being compared to the fixed period to provide a comparison of the unknown and reference temperatures independent of the gain of the detector, which is a valuable improvement over prior radiometers. Also, by measuring time rather than voltage, the arrangement facilitates providing a digital output more suitable for storage and transmission of the data than the analog output of prior radiometers. The instrument, which is relatively simple, rugged and compact, lends itself well to unattended use in monitoring the effect of rain storms on transmission in the 11.7 to 12.2 GHz band employed for satelite communication.« less

Rounding Technique for High-Speed Digital Signal Processing

NASA Technical Reports Server (NTRS)

Wechsler, E. R.

1983-01-01

Arithmetic technique facilitates high-speed rounding of 2's complement binary data. Conventional rounding of 2's complement numbers presents problems in high-speed digital circuits. Proposed technique consists of truncating K + 1 bits then attaching bit in least significant position. Mean output error is zero, eliminating introducing voltage offset at input.

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

DOEpatents

Caporaso, G.J.; Sampayan, S.E.; Kirbie, H.C.

1998-10-13

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.

Stress wave techniques for determining quality of dimensional lumber from switch ties

Treesearch

K. C. Schad; D. E. Kretschmann; K. A. McDonald; R. J. Ross; D. W. Green

1995-01-01

Researchers at the Forest Products Laboratory, USDA Forest Service, have been studying nondestructive techniques for evaluating the strength of wood. This report describes the results of a pilot study on using these techniques to determine the quality of large dimensional lumber cut from switch ties. First, pulse echo and dynamic (transverse vibration) techniques were...

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

The theory and implementation of a high quality pulse width modulated waveform synthesiser applicable to voltage FED inverters

NASA Astrophysics Data System (ADS)

Lower, Kim Nigel

1985-03-01

Modulation processes associated with the digital implementation of pulse width modulation (PWM) switching strategies were examined. A software package based on a portable turnkey structure is presented. Waveform synthesizer implementation techniques are reviewed. A three phase PWM waveform synthesizer for voltage fed inverters was realized. It is based on a constant carrier frequency of 18 kHz and a regular sample, single edge, asynchronous PWM switching scheme. With high carrier frequencies, it is possible to utilize simple switching strategies and as a consequence, many advantages are highlighted, emphasizing the importance to industrial and office markets.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, William R. [Orinda, CA

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

A series string of ignitrons for switching a large current at high voltage to ground is discussed. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors. 1 fig.

High-voltage subnanosecond dielectric breakdown

NASA Astrophysics Data System (ADS)

Mankowski, John Jerome

Current interests in ultrawideband radar sources are in the microwave regime, which correspond to voltage pulse risetimes less than a nanosecond. Some new sources, including the Phillips Laboratory Hindenberg series of hydrogen gas switched pulsers use hydrogen at hundreds of atmospheres of pressure in the switch. Unfortunately, the published data of electrical breakdown of gas and liquid media at these time lengths are relatively scarce. A study was conducted on the electrical breakdown properties of liquid and gas dielectrics at subnanosecond and nanoseconds. Two separate voltage sources with pulse risetimes less than 400 ps were developed. Diagnostic probes were designed and tested for their capability of detecting high voltage pulses at these fast risetimes. A thorough investigation into E-field strengths of liquid and gas dielectrics at breakdown times ranging from 0.4 to 5 ns was performed. The voltage polarity dependence on breakdown strength is observed. Streak camera images of streamer formation were taken. The effect of ultraviolet radiation, incident upon the gap, on statistical lag time was determined.

Switching power pulse system

DOEpatents

Aaland, Kristian

1983-01-01

A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

Optimization of micromachined membrane switches

NASA Astrophysics Data System (ADS)

Hiltmann, Kai; Lang, Walter

1997-09-01

We have determined the minimum dimensions for micromachined membrane switches in several experiments, both regarding the strength of the membranes themselves and the elongations required for safe switching performance. Based on these data, pressure switches for voltages of 10 - 100 V were made as single and multiple elements and tested. Test results, with scatter of pressure threshold data in the ten per cent range, prove very encouraging for further development.

The electroosmotic droplet switch: countering capillarity with electrokinetics.

PubMed

Vogel, Michael J; Ehrhard, Peter; Steen, Paul H

2005-08-23

Electroosmosis, originating in the double-layer of a small liquid-filled pore (size R) and driven by a voltage V, is shown to be effective in pumping against the capillary pressure of a larger liquid droplet (size B) provided the dimensionless parameter sigmaR(2)/epsilon|zeta|VB is small enough. Here sigma is surface tension of the droplet liquid/gas interface, epsilon is the liquid dielectric constant, and zeta is the zeta potential of the solid/liquid pair. As droplet size diminishes, the voltage required to pump electroosmotically scales as V approximately R(2)/B. Accordingly, the voltage needed to pump against smaller higher-pressure droplets can actually decrease provided the pump poresize scales down with droplet size appropriately. The technological implication of this favorable scaling is that electromechanical transducers made of moving droplets, so-called "droplet transducers," become feasible. To illustrate, we demonstrate a switch whose bistable energy landscape derives from the surface energy of a droplet-droplet system and whose triggering derives from the electroosmosis effect. The switch is an electromechanical transducer characterized by individual addressability, fast switching time with low voltage, and no moving solid parts. We report experimental results for millimeter-scale droplets to verify key predictions of a mathematical model of the switch. With millimeter-size water droplets and micrometer-size pores, 5 V can yield switching times of 1 s. Switching time scales as B(3)/VR(2). Two possible "grab-and-release" applications of arrays of switches are described. One mimics the controlled adhesion of an insect, the palm beetle; the other uses wettability to move a particle along a trajectory.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

Organic Bistable Memory Switching Phenomena in Squarylium-Dye Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Kushida, Masahito; Inomata, Hisao; Miyata, Hiroshi; Harada, Kieko; Saito, Kyoichi; Sugita, Kazuyuki

2003-06-01

We have investigated the relationship between the switching phenomena and H-like aggregates in squarylium-dye Langmuir-Blodgett (SQ LB) films. The current-voltage characteristics of SQ LB films sandwiched between the top gold electrode and the bottom aluminum electrode indicated conductance switching phenomena below the temperature of 100°C but not at 140°C. Current densities suddenly increased at switching voltages between 2 and 4 V. The switching voltage increased as the temperature increased between room temperature and 100°C. Current densities were 50-100 μA/cm2 in a low-impedance state (ON state). A high-impedance state (OFF state) can be recovered by applying a reverse bias, and therefore, these bistable devices are ideal for memory applications. The dependence of conductance switching phenomena and ultraviolet-visible absorption spectra on annealing temperatures was studied. The results revealed that conductance switching phenomena were caused by the presence of H-like aggregates in the SQ LB films.

A novel multi-actuation CMOS RF MEMS switch

NASA Astrophysics Data System (ADS)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

GAS DISCHARGE SWITCH EVALUATION FOR RHIC BEAM ABORT KICKER APPLICATION.

DOE Office of Scientific and Technical Information (OSTI.GOV)

ZHANG,W.; SANDBERG,J.; SHELDRAKE,R.

2002-06-30

A gas discharge switch EEV HX3002 is being evaluated at Brookhaven National Laboratory as a possible candidate of RHIC Beam Abort Kicker modulator main switch. At higher beam energy and higher beam intensity, the switch stability becomes very crucial. The hollow anode thyratron used in the existing system is not rated for long reverse current conduction. The reverse voltage arcing caused thyratron hold-off voltage de-rating has been the main limitation of the system operation. To improve the system reliability, a new type of gas discharge switch has been suggested by Marconi Applied Technology for its reverse conducting capability.

Towards a Switched-Capacitor Based Stimulator for Efficient Deep-Brain Stimulation

PubMed Central

Vidal, Jose; Ghovanloo, Maysam

2013-01-01

We have developed a novel 4-channel prototype stimulation circuit for implantable neurological stimulators (INS). This Switched-Capacitor based Stimulator (SCS) aims to utilize charge storage and charge injection techniques to take advantage of both the efficiency of conventional voltage-controlled stimulators (VCS) and the safety and controllability of current-controlled stimulators (CCS). The discrete SCS prototype offers fine control over stimulation parameters such as voltage, current, pulse width, frequency, and active electrode channel via a LabVIEW graphical user interface (GUI) when connected to a PC through USB. Furthermore, the prototype utilizes a floating current sensor to provide charge-balanced biphasic stimulation and ensure safety. The stimulator was analyzed using an electrode-electrolyte interface (EEI) model as well as with a pair of pacing electrodes in saline. The primary motivation of this research is to test the feasibility and functionality of a safe, effective, and power-efficient switched-capacitor based stimulator for use in Deep Brain Stimulation. PMID:21095987

Research on multi-switch synchronization based on single trigger generator

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Cheng, Xinbing; Yang, Jianhua; Yang, Xiao; Chen, Rong

2018-05-01

Multi-switch synchronous operation is an effective approach to provide high-voltage high-current for a high-power device. In this paper, we present a synchronization system with a corona stabilized triggered switch (CSTS) as main switch and an all-solid modularized quasi-square pulse forming system. In addition, this paper provides explanations of low jitter and accurate triggering of CSTS based on streamer theory. Different switches of the module are triggered by an electrical pulse created by a trigger generator, a quasi-square pulse can be created on the load. The experimental results show that it is able to switch voltages in excess of 40kV with nanosecond system jitter for three-module synchronous operation.

Parallel, staged opening switch power conditioning techniques for flux compression generator applications

NASA Astrophysics Data System (ADS)

Reinovsky, R. E.; Levi, P. S.; Bueck, J. C.; Goforth, J. H.

The Air Force Weapons Laboratory, working jointly with Los Alamos National Laboratory, has conducted a series of experiments directed at exploring composite, or staged, switching techniques for use in opening switches in applications which require the conduction of very high currents (or current densities) with very low losses for relatively long times (several tens of microseconds), and the interruption of these currents in much shorter times (ultimately a few hundred nanoseconds). The results of those experiments are reported.

The phenomenon of voltage controlled switching in disordered superconductors.

PubMed

Ghosh, Sanjib; De Munshi, D

2014-01-15

The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device.

Numerical Simulation of Liquid Metal RF MEMS Switch Based on EWOD

NASA Astrophysics Data System (ADS)

Liu, Tingting; Gao, Yang; Yang, Tao; Guo, Huihui

2018-03-01

Conventional RF MEMS switches rely on metal-to-dielectric or metal-to-metal contacts. Some problems in the “solid-solid” contact, such as contact degradation, signal bounce and poor reliability, can be solved by using “liquid-solid” contact. The RF MEMS switch based on liquid metal is characterized by small contact resistance, no moving parts, high reliability and long life. Using electrowetting-on-dielectric (EWOD) way to control the movement of liquid metal in the RF MEMS switch, to achieve the “on” and “off” of the switch. In this paper, the electrical characteristics and RF characteristics of RF MEMS switches are simulated by fluid mechanics software FLUENT and electromagnetic simulation software HFSS. The effects of driving voltage, switching time, dielectric layer, hydrophobic layer material and thickness, switching channel height on the RF characteristics are studied. The results show that to increase the external voltage to the threshold voltage of 58V, the liquid metal began to move, and the switching time from “off” state to “on” state is 16ms. In the 0~20GHz frequency range, the switch insertion loss is less than 0.28dB, isolation is better than 23.32dB.

Air-bridge and Vertical CNT Switches for High Performance Switching Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Wong, Eric W.; Epp, Larry; Bronikowski, Michael J.; Hunt, BBrian D.

2006-01-01

Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, approximately 1 micrometer deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture.

Bipolar resistive switching in Si/Ag nanostructures

NASA Astrophysics Data System (ADS)

Dias, C.; Lv, H.; Picos, R.; Aguiar, P.; Cardoso, S.; Freitas, P. P.; Ventura, J.

2017-12-01

Resistive switching devices are being intensively studied aiming a large number of promising applications such as nonvolatile memories, artificial neural networks and sensors. Here, we show nanoscale bipolar resistive switching in Pt/Si/Ag/TiW structures, with a dielectric barrier thickness of 20 nm. The observed phenomenon is based on the formation/rupture of metallic Ag filaments in the otherwise insulating Si host material. No electroforming process was required to achieve resistive switching. We obtained average values of 0.23 V and -0.24 V for the Set and Reset voltages, respectively. The stability of the switching was observed for over 100 cycles, together with a clear separation of the ON (103 Ω) and OFF (102 Ω) states. Furthermore, the influence of the Set current compliance on the ON resistance, resistances ratio and Set/Reset voltages percentage variation was also studied.

General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films

PubMed Central

Kim, Tae Young; Badsha, Md. Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

2016-01-01

We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices. PMID:26965195

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

1981-10-01

A triggered low-pressure switch was tested switching a charged capacitor across a damping resistor simulating a transformer. A series saturating inductor protected the switch from electron beam anode damage. The capacitor was 15 micro F and charge voltages up to 50 kV were used. The time to current maximum was 5 to 8 micro S. The current terminated at about 50 micro S and voltage could be reapplied at about 100 micro S.

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

2018-05-01

The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors

NASA Astrophysics Data System (ADS)

Nutku, Ferhat; Erol, Ayse; Arikan, M. Cetin; Ergun, Yuksel

2014-11-01

In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of the zero-bias offsets were studied on mesa structures shaped in different diameters. Furthermore, effect of mesa diameter on J-V characteristics was investigated. The temperature, initial bias voltage and voltage sweep rate dependence of the zero-bias offsets were explained by a qualitative model, which is based on a RC equivalent circuit of the quantum well infrared photodetector.

Light-activated resistance switching in SiOx RRAM devices

NASA Astrophysics Data System (ADS)

Mehonic, A.; Gerard, T.; Kenyon, A. J.

2017-12-01

We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications

NASA Astrophysics Data System (ADS)

Lin, Yu-Ta; Ker, Ming-Dou; Wang, Tzu-Ming

2011-03-01

A new on-panel readout circuit with threshold voltage compensation for capacitive sensor in low temperature polycrystalline silicon (poly-Si) thin-film transistor (LTPS-TFT) process has been proposed. In order to compensate the threshold voltage variation from LTPS process variation, the proposed readout circuit applies a novel compensation approach with switch capacitor technique. In addition, a 4-bit analog-to-digital converter (ADC) is added to identify different sensed capacitor values and further enhances the overall resolution of touch panel.

Double synchronized switch harvesting (DSSH): a new energy harvesting scheme for efficient energy extraction.

PubMed

Lallart, Mickaël; Garbuio, Lauric; Petit, Lionel; Richard, Claude; Guyomar, Daniel

2008-10-01

This paper presents a new technique for optimized energy harvesting using piezoelectric microgenerators called double synchronized switch harvesting (DSSH). This technique consists of a nonlinear treatment of the output voltage of the piezoelectric element. It also integrates an intermediate switching stage that ensures an optimal harvested power whatever the load connected to the microgenerator. Theoretical developments are presented considering either constant vibration magnitude, constant driving force, or independent extraction. Then experimental measurements are carried out to validate the theoretical predictions. This technique exhibits a constant output power for a wide range of load connected to the microgenerator. In addition, the extracted power obtained using such a technique allows a gain up to 500% in terms of maximal power output compared with the standard energy harvesting method. It is also shown that such a technique allows a fine-tuning of the trade-off between vibration damping and energy harvesting.

[Impact of exposure dose reduction of radiation treatment planning CT using low tube voltage technique].

PubMed

Kouno, Takuya; Kuga, Noriyuki; Enzaki, Masahiro; Yamashita, Yuuki; Kitazato, Yumiko; Shimotabira, Haruhiko; Jinnouchi, Takashi; Kusuhara, Kazuo; Kawamura, Shinji

2015-04-01

The aim of this study was to reduce the exposed dose of radiotherapy treatment planning computed tomography (CT) by using low tube voltage technique. We used tube voltages of 80 kV, 100 kV, and 120 kV, respectively. First, we evaluated exposure dose with CT dose index (CTDI) for each voltage. Second, we compared image quality indexes such as modulation transfer function (MTF), noise power spectrum (NPS), and contrast to noise ratio (CNR) of phantom images with each voltage. Third, CT to electron density tables were measured in three voltages and monitor unit value was calculated along with clinical cases. Finally, CT surface exposed dose of chest skin was measured by thermoluminescent dosimeter (TLD). In image evaluation MTF and NPS were approximately equal; CNR slightly decreased, 2.0% for 100 kV. We performed check radiation dose accuracy for each tube voltage with each model phantom. As a result, the difference of MU value was not accepted. Finally, compared with 120 kV, CTDIvol and TLD value showed markedly decreased radiation dose, 60% for 80 kV and 30% for 100 kV. Using a technique with low tube voltages, especially 100 kV, is useful in radiotherapy treatment planning to obtain 20% dose reduction without compromising 120 kV image quality.

High-voltage, high-power, solid-state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Simulation study of a new inverse-pinch high Coulomb transfer switch

NASA Technical Reports Server (NTRS)

Choi, S. H.

1984-01-01

A simulation study of a simplified model of a high coulomb transfer switch is performed. The switch operates in an inverse pinch geometry formed by an all metal chamber, which greatly reduces hot spot formations on the electrode surfaces. Advantages of the switch over the conventional switches are longer useful life, higher current capability and lower inductance, which improves the characteristics required for a high repetition rate switch. The simulation determines the design parameters by analytical computations and comparison with the experimentally measured risetime, current handling capability, electrode damage, and hold-off voltages. The parameters of initial switch design can be determined for the anticipated switch performance. Results are in agreement with the experiment results. Although the model is simplified, the switch characteristics such as risetime, current handling capability, electrode damages, and hold-off voltages are accurately determined.

Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO 3/NdGaO 3 heterostructures

DOE PAGES

Dong, Yongqi; Xu, Haoran; Luo, Zhenlin; ...

2017-05-16

The effect of gate voltage polarity on the behavior of NdNiO 3 epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is providedmore » for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni 3+. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.« less

Optically initiated silicon carbide high voltage switch

DOEpatents

Caporaso, George J [Livermore, CA; Sampayan, Stephen E [Manteca, CA; Sullivan, James S [Livermore, CA; Sanders,; David, M [Livermore, CA

2011-02-22

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

CMOS single-stage input-powered bridge rectifier with boost switch and duty cycle control

NASA Astrophysics Data System (ADS)

Radzuan, Roskhatijah; Mohd Salleh, Mohd Khairul; Hamzah, Mustafar Kamal; Ab Wahab, Norfishah

2017-06-01

This paper presents a single-stage input-powered bridge rectifier with boost switch for wireless-powered devices such as biomedical implants and wireless sensor nodes. Realised using CMOS process technology, it employs a duty cycle switch control to achieve high output voltage using boost technique, leading to a high output power conversion. It has only six external connections with the boost inductance. The input frequency of the bridge rectifier is set at 50 Hz, while the switching frequency is 100 kHz. The proposed circuit is fabricated on a single 0.18-micron CMOS die with a space area of 0.024 mm2. The simulated and measured results show good agreement.

A study on stimulation of DC high voltage power of LCC series parallel resonant in projectile velocity measurement system

NASA Astrophysics Data System (ADS)

Lu, Dong-dong; Gu, Jin-liang; Luo, Hong-e.; Xia, Yan

2017-10-01

According to specific requirements of the X-ray machine system for measuring velocity of outfield projectile, a DC high voltage power supply system is designed for the high voltage or the smaller current. The system comprises: a series resonant circuit is selected as a full-bridge inverter circuit; a high-frequency zero-current soft switching of a high-voltage power supply is realized by PWM output by STM32; a nanocrystalline alloy transformer is chosen as a high-frequency booster transformer; and the related parameters of an LCC series-parallel resonant are determined according to the preset parameters of the transformer. The concrete method includes: a LCC series parallel resonant circuit and a voltage doubling circuit are stimulated by using MULTISM and MATLAB; selecting an optimal solution and an optimal parameter of all parts after stimulation analysis; and finally verifying the correctness of the parameter by stimulation of the whole system. Through stimulation analysis, the output voltage of the series-parallel resonant circuit gets to 10KV in 28s: then passing through the voltage doubling circuit, the output voltage gets to 120KV in one hour. According to the system, the wave range of the output voltage is so small as to provide the stable X-ray supply for the X-ray machine for measuring velocity of outfield projectile. It is fast in charging and high in efficiency.

A three-level support method for smooth switching of the micro-grid operation model

NASA Astrophysics Data System (ADS)

Zong, Yuanyang; Gong, Dongliang; Zhang, Jianzhou; Liu, Bin; Wang, Yun

2018-01-01

Smooth switching of micro-grid between the grid-connected operation mode and off-grid operation mode is one of the key technologies to ensure it runs flexible and efficiently. The basic control strategy and the switching principle of micro-grid are analyzed in this paper. The reasons for the fluctuations of the voltage and the frequency in the switching process are analyzed from views of power balance and control strategy, and the operation mode switching strategy has been improved targeted. From the three aspects of controller’s current inner loop reference signal, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level security strategy for smooth switching of micro-grid operation mode is proposed. From the three aspects of controller’s current inner loop reference signal tracking, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level strategy for smooth switching of micro-grid operation mode is proposed. At last, it is proved by simulation that the proposed control strategy can make the switching process smooth and stable, the fluctuation problem of the voltage and frequency has been effectively improved.

The 77 K operation of a multi-resonant power converter

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

The liquid-nitrogen temperature (77 K) operation of a 55 W, 200 kHz, 48/28 V zero-voltage switching multi-resonant dc/dc converter designed with commercially available components is reported. Upon dipping the complete converter (power and control circuits) into liquid-nitrogen, the converter performance improved as compared to the room-temperature operation. The switching frequency, resonant frequency, and the characteristic impedance did not change significantly. Accordingly, the zero-voltage switching was maintained from no-load to full-load for the specified line variations. Cryoelectronics can provide high density power converters, especially for high power applications.

Series transistors isolate amplifier from flyback voltage

NASA Technical Reports Server (NTRS)

Banks, W.

1967-01-01

Circuit enables high sawtooth currents to be passed through a deflection coil and isolate the coil driving amplifier from the flyback voltage. It incorporates a switch consisting of transistors in series with the driving amplifier and deflection coil. The switch disconnects the deflection coil from the amplifier during the retrace time.

Adjustable, High Voltage Pulse Generator with Isolated Output for Plasma Processing

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth E.; Prager, James; Slobodov, Ilia

2015-09-01

Eagle Harbor Technologies (EHT), Inc. has developed a high voltage pulse generator with isolated output for etch, sputtering, and ion implantation applications within the materials science and semiconductor processing communities. The output parameters are independently user adjustable: output voltage (0 - 2.5 kV), pulse repetition frequency (0 - 100 kHz), and duty cycle (0 - 100%). The pulser can drive loads down to 200 Ω. Higher voltage pulsers have also been tested. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators take advantage modern silicon carbide (SiC) MOSFETs. These new solid-state switches decrease the switching and conduction losses while allowing for higher switching frequency capabilities. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency. This work was supported in part by a DOE SBIR.

Novel optical switch with a reconfigurable dielectric liquid droplet.

PubMed

Ren, Hongwen; Xu, Su; Ren, Daqiu; Wu, Shin-Tson

2011-01-31

We demonstrated a novel optical switch with a reconfigurable dielectric liquid droplet. The device consists of a clear liquid droplet (glycerol) surrounded by a black liquid (dye-doped liquid crystal). In the voltage-off state, the incident light passing through the clear liquid droplet is absorbed by the black liquid, resulting in a dark state. In the voltage-on state, the dome of the clear liquid droplet is uplifted by the dielectric force to form a light pipe which in turn transmits the incident light. Upon removing the voltage, the droplet recovers to its original shape and the switch is closed. We also demonstrated a red color light switch with ~10:1 contrast ratio and ~300 ms response time. Devices based on such an operation mechanism will find attractive applications in light shutter, tunable iris, variable optical attenuators, and displays.

Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Rangra, Kamaljit

2016-10-01

A compact radiofrequency (RF) MEMS single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed. The critical process parameters are analyzed to improve the fabrication process. A technique of cold-hot thermal shock for lift-off method is explored. The residual stress in the structure is quantified by lancet test structures that come out to be 51 MPa. Effect of residual stress on actuation voltage is explored, which changes its value from 24 to 22 V. Resonance frequency and switching speed of the switch are 11 kHz and 44 μs, respectively, measured using laser Doppler vibrometer. Measured bandwidth of the SPDT switch is 20 GHz (5 to 25 GHz), which is verified with finite element method simulations in high frequency structure simulator©; and an equivalent LCR circuit in advanced design system©;. Insertion loss of the switch lies in -0.1 to -0.5 dB with isolation better than -20 dB for the above-mentioned bandwidth.

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

2009-01-01

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

Anode initiated surface flashover switch

DOEpatents

Brainard, John P.; Koss, Robert J.

2003-04-29

A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

Microfluidic T-form mixer utilizing switching electroosmotic flow.

PubMed

Lin, Che-Hsin; Fu, Lung-Ming; Chien, Yu-Sheng

2004-09-15

This paper presents a microfluidic T-form mixer utilizing alternatively switching electroosmotic flow. The microfluidic device is fabricated on low-cost glass slides using a simple and reliable fabrication process. A switching DC field is used to generate an electroosmotic force which simultaneously drives and mixes the fluid samples. The proposed design eliminates the requirements for moving parts within the microfluidic device and delicate external control systems. Two operation modes, namely, a conventional switching mode and a novel pinched switching mode, are presented. Computer simulation is employed to predict the mixing performance attainable in both operation modes. The simulation results are then compared to those obtained experimentally. It is shown that a mixing performance as high as 97% can be achieved within a mixing distance of 1 mm downstream from the T-junction when a 60 V/cm driving voltage and a 2-Hz switching frequency are applied in the pinched switching operation mode. This study demonstrates how the driving voltage and switching frequency can be optimized to yield an enhanced mixing performance. The novel methods presented in this study provide a simple solution to mixing problems in the micro-total-analysis-systems field.

Voltage-induced swelling and deswelling of weak polybase brushes.

PubMed

Weir, Michael P; Heriot, Sasha Y; Martin, Simon J; Parnell, Andrew J; Holt, Stephen A; Webster, John R P; Jones, Richard A L

2011-09-06

We have investigated a novel method of remotely switching the conformation of a weak polybase brush using an applied voltage. Surface-grafted polyelectrolyte brushes exhibit rich responsive behavior and show great promise as "smart surfaces", but existing switching methods involve physically or chemically changing the solution in contact with the brush. In this study, high grafting density poly(2-(dimethylamino)ethyl methacrylate) (PDMAEMA) brushes were grown from silicon surfaces using atom transfer radical polymerization. Optical ellipsometry and neutron reflectivity were used to measure changes in the profiles of the brushes in response to DC voltages applied between the brush substrate and a parallel electrode some distance away in the surrounding liquid (water or D(2)O). Positive voltages were shown to cause swelling, while negative voltages in some cases caused deswelling. Neutron reflectometry experiments were carried out on the INTER reflectometer (ISIS, Rutherford Appleton Laboratory, UK) allowing time-resolved measurements of polymer brush structure. The PDMAEMA brushes were shown to have a polymer volume fraction profile described by a Gaussian-terminated parabola both in the equilibrium and in the partially swollen states. At very high positive voltages (in this study, positive bias means positive voltage to the brush-bearing substrate), the brush chains were shown to be stretched to an extent comparable to their contour length, before being physically removed from the interface. Voltage-induced swelling was shown to exhibit a wider range of brush swelling states in comparison to pH switching, with the additional advantages that the stimulus is remotely controlled and may be fully automated. © 2011 American Chemical Society

Voltage stress induced reversible diode behavior in pentacene thin films

NASA Astrophysics Data System (ADS)

Murdey, Richard; Sato, Naoki

2012-12-01

The current-voltage characteristics of a vacuum-deposited 100 nm pentacene thin film have been measured in situ under ultrahigh vacuum. Despite using bottom contact geometry with titanium for both electrodes, the I-V curves are asymmetric and the direction and degree of the diode-like behavior vary with sample and measurement history. After careful examination we have found that applying a high positive or negative bias voltage for about 24 h at elevated temperatures was sufficient to completely switch the diode forward direction. The switching action is fully reversible and the diode behavior, once switched, remains stable to repeated measurements at least over a period of several weeks.

An In-Rush Current Suppression Technique for the Solid-State Transfer Switch System

NASA Astrophysics Data System (ADS)

Cheng, Po-Tai; Chen, Yu-Hsing

More and more utility companies provide dual power feeders as a premier service of high power quality and reliability. To take advantage of this, the solid-state transfer switch (STS) is adopted to protect the sensitive load against the voltage sag. However, the fast transfer process may cause in-rush current on the load-side transformer due to the resulting DC-offset in its magnetic flux as the load-transfer is completed. The in-rush current can reach 2∼6 p.u. and it may trigger the over-current protections on the power feeder. This paper develops a flux estimation scheme and a thyristor gating scheme based on the impulse commutation bridge STS (ICBSTS) to minimize the DC-offset on the magnetic flux. By sensing the line voltages of both feeders, the flux estimator can predict the peak transient flux linkage at the moment of load-transfer and evaluate a suitable moment for the transfer to minimize the in-rush current. Laboratory test results are presented to validate the performance of the proposed system.

Modeling of switching regulator power stages with and without zero-inductor-current dwell time

NASA Technical Reports Server (NTRS)

Lee, F. C.; Yu, Y.; Triner, J. E.

1976-01-01

State space techniques are employed to derive accurate models for buck, boost, and buck/boost converter power stages operating with and without zero-inductor-current dwell time. A generalized procedure is developed which treats the continuous-inductor-current mode without the dwell time as a special case of the discontinuous-current mode, when the dwell time vanishes. An abrupt change of system behavior including a reduction of the system order when the dwell time appears is shown both analytically and experimentally.

Switching Characteristics of Ferroelectric Transistor Inverters

NASA Technical Reports Server (NTRS)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

ZERO SUPPRESSION FOR RECORDERS

DOEpatents

Fort, W.G.S.

1958-12-30

A zero-suppression circuit for self-balancing recorder instruments is presented. The essential elements of the circuit include a converter-amplifier having two inputs, one for a reference voltage and the other for the signal voltage under analysis, and a servomotor with two control windings, one coupled to the a-c output of the converter-amplifier and the other receiving a reference input. Each input circuit to the converter-amplifier has a variable potentiometer and the sliders of the potentiometer are ganged together for movement by the servoinotor. The particular noveity of the circuit resides in the selection of resistance values for the potentiometer and a resistor in series with the potentiometer of the signal circuit to ensure the full value of signal voltage variation is impressed on a recorder mechanism driven by servomotor.

Manipulating spins of magnetic molecules: Hysteretic behavior with respect to bias voltage

NASA Astrophysics Data System (ADS)

Płomińska, Anna; Misiorny, Maciej; Weymann, Ireneusz

2018-02-01

Formation of a magnetic hysteresis loop with respect to a bias voltage is investigated theoretically in a spin-valve device based on a single magnetic molecule. We consider a device consisting of two ferromagnetic electrodes bridged by a carbon nanotube, acting as a quantum dot, to which a spin-anisotropic molecule is exchange-coupled. Such a coupling allows for transfer of angular momentum between the molecule and a spin current flowing through the dot, and thus, for switching orientation of the molecular spin. We demonstrate that this current-induced switching process exhibits a hysteretic behavior with respect to a bias voltage applied to the device. The analysis is carried out with the use of the real-time diagrammatic technique in the lowest-order expansion of the tunnel coupling of the dot to electrodes. The influence of both the intrinsic properties of the spin-valve device (the spin polarization of electrodes and the coupling strength of the molecule to the dot) and those of the molecule itself (magnetic anisotropy and spin relaxation) on the size of the magnetic hysteresis loop is discussed.

Electrical safety for high voltage arrays

NASA Technical Reports Server (NTRS)

Marshall, N. A.

1983-01-01

A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

Design and Optimization of AlN based RF MEMS Switches

NASA Astrophysics Data System (ADS)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Astrophysics Data System (ADS)

Sturman, J. C.

1985-05-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

NASA Astrophysics Data System (ADS)

Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

2017-12-01

This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

30 CFR 75.809 - Identification of circuit breakers and disconnecting switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... disconnecting switches. 75.809 Section 75.809 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.809 Identification of circuit breakers and disconnecting switches. [Statutory Provisions] Circuit breakers and disconnecting switches underground shall be marked for...

30 CFR 75.809 - Identification of circuit breakers and disconnecting switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... disconnecting switches. 75.809 Section 75.809 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.809 Identification of circuit breakers and disconnecting switches. [Statutory Provisions] Circuit breakers and disconnecting switches underground shall be marked for...

30 CFR 75.809 - Identification of circuit breakers and disconnecting switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... disconnecting switches. 75.809 Section 75.809 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.809 Identification of circuit breakers and disconnecting switches. [Statutory Provisions] Circuit breakers and disconnecting switches underground shall be marked for...

30 CFR 75.809 - Identification of circuit breakers and disconnecting switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... disconnecting switches. 75.809 Section 75.809 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.809 Identification of circuit breakers and disconnecting switches. [Statutory Provisions] Circuit breakers and disconnecting switches underground shall be marked for...

30 CFR 75.809 - Identification of circuit breakers and disconnecting switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... disconnecting switches. 75.809 Section 75.809 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.809 Identification of circuit breakers and disconnecting switches. [Statutory Provisions] Circuit breakers and disconnecting switches underground shall be marked for...

A hybrid electromechanical solid state switch for ac power control

NASA Technical Reports Server (NTRS)

1972-01-01

Bidirectional thyristor coupled to a series of actuator driven electromechanical contacts generates hybrid electromechanical solid state switch for ac power control. Device is useful in power control applications where zero crossover switching is required.

30 CFR 77.704-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Operating disconnecting or cutout switches. 77... UNDERGROUND COAL MINES Grounding § 77.704-9 Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage surface lines shall be operated only with insulated sticks...

30 CFR 77.704-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Operating disconnecting or cutout switches. 77... UNDERGROUND COAL MINES Grounding § 77.704-9 Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage surface lines shall be operated only with insulated sticks...

30 CFR 77.704-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Operating disconnecting or cutout switches. 77... UNDERGROUND COAL MINES Grounding § 77.704-9 Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage surface lines shall be operated only with insulated sticks...

30 CFR 77.704-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Operating disconnecting or cutout switches. 77... UNDERGROUND COAL MINES Grounding § 77.704-9 Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage surface lines shall be operated only with insulated sticks...

30 CFR 77.704-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Operating disconnecting or cutout switches. 77... UNDERGROUND COAL MINES Grounding § 77.704-9 Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage surface lines shall be operated only with insulated sticks...

Resistive switching and memory effects of AgI thin film

NASA Astrophysics Data System (ADS)

Liang, X. F.; Chen, Y.; Shi, L.; Lin, J.; Yin, J.; Liu, Z. G.

2007-08-01

A memory device has been fabricated using an AgI film sandwiched between a Pt film and an Ag film with the lateral size of the device scaled down to 300 nm. The AgI film was made by the iodination of the Ag film at room temperature and under ambient pressure. The switching between high- and low-resistance states can be realized by applying voltages of different polarities. The switching can be performed under the application of voltage pulses with a 100 Hz frequency for ~103 times. The switching times are in the order of microseconds and the retention time is about a week. The switching effects are explained as the electrochemical growth and dissolution of Ag in AgI.

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

Effect of boundary (support) conditions on piezoelectric damping in the case of SSDI vibration control technique

NASA Astrophysics Data System (ADS)

Guyomar, D.; Mohammadi, S.; Richard, C.

2009-02-01

Piezoelectric transducers in conjunction with appropriate electric networks can be used as a mechanical energy dissipation device. If a piezoelectric element is attached to a structure, it is strained as the structure deforms and converts a portion of the vibration energy into electrical energy that can be dissipated through a shunt network in the form of heating. These vibration control devices experienced a great development in recent years, due to their performances and advantages compared with active techniques. One of them is the synchronized switch damping (SSD) and derived techniques, which were developed in the field of piezoelectric damping, and which lead to a very good trade-off between the simplicity, the required power supply and their performances. This technique consists in a non-linear processing of the piezoelectric voltage, which induces an increase in electromechanical energy conversion. The control law consists in triggering the inverting switch on each extremum of voltage (or displacement). In this study, the proposed method for the switching sequence is based on the statistical evaluation of structural deflection. The purpose of this paper is to present an experimental study of the synchronized switch damping on inductance (SSDI) control technique sensitivity to the system boundary conditions. It is observed that the fundamental natural frequency greatly depends on these conditions. The effect of these constraints is distributed all over the system and significantly affects the results.

Light-Actuated Micromechanical Relays for Zero-Power Infrared Detection

DTIC Science & Technology

2017-03-01

Light-Actuated Micromechanical Relays for Zero-Power Infrared Detection Zhenyun Qian, Sungho Kang, Vageeswar Rajaram, Cristian Cassella, Nicol E...near-zero power infrared (IR) detection . Differently from any existing switching element, the proposed LMR relies on a plasmonically-enhanced...chip enabling the monolithic fabrication of multiple LMRs connected together to form a logic topology suitable for the detection of specific

Restraint Method of Voltage Total Harmonic Distortion in Distribution Network by Power Conditioner Systems using Measured Data from IT Switches

NASA Astrophysics Data System (ADS)

Kawasaki, Shoji; Shimoda, Kazuki; Tanaka, Motohiro; Taoka, Hisao; Matsuki, Junya; Hayashi, Yasuhiro

Recently, the amount of distributed generation (DG) such as photovoltaic system and wind power generator system installed in a distribution system has been increasing because of reduction of the effects on the environment. However, the harmonic troubles in the distribution system are apprehended in the background of the increase of connection of DGs through the inverters and the spread of power electronics equipment. In this paper, the authors propose a restraint method of voltage total harmonic distortion (THD) in a whole distribution network by active filter (AF) operation of plural power conditioner systems (PCS). Moreover, the authors propose a determination method of the optimal gain of AF operation so as to minimize the maximum value of voltage THD in the distribution network by the real-time feedback control with measured data from the information technology (IT) switches. In order to verify the validity of the proposed method, the numerical calculations are carried out by using an analytical model of distribution network interconnected DGs with PCS.

Switch device having a non-linear transmission line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.

Switching devices are provided. The switching devices include an input electrode, having a main electrode and a trigger electrode, and an output electrode. The main electrode and the trigger electrode are separated from the output electrode by a main gap and a trigger gap, respectively. During operation, the trigger electrode compresses and amplifies a trigger voltage signal causing the trigger electrode to emit a pulse of energy. This pulse of energy form plasma near the trigger electrode, either by arcing across the trigger gap, or by arcing from the trigger electrode to the main electrode. This plasma decreases the breakdownmore » voltage of the main gap. Simultaneously, or near simultaneously, a main voltage signal propagates through the main electrode. The main voltage signal emits a main pulse of energy that arcs across the main gap while the plasma formed by the trigger pulse is still present.« less

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

On Application of Model Predictive Control to Power Converter with Switching

NASA Astrophysics Data System (ADS)

Zanma, Tadanao; Fukuta, Junichi; Doki, Shinji; Ishida, Muneaki; Okuma, Shigeru; Matsumoto, Takashi; Nishimori, Eiji

This paper concerns a DC-DC converter control. In DC-DC converters, there exist both continuous components such as inductance, conductance and resistance and discrete ones, IGBT and MOSFET as semiconductor switching elements. Such a system can be regarded as a hybrid dynamical system. Thus, this paper presents a dc-dc control technique based on the model predictive control. Specifically, a case in which the load of the dc-dc converter changes from active to sleep is considered. In the case, a control method which makes the output voltage follow to the reference quickly in transition, and the switching frequency be constant in steady state. In addition, in applying the model predictive control to power electronics circuits, the switching characteristic of the device and the restriction condition for protection are also considered. The effectiveness of the proposed method is illustrated by comparing a conventional method through some simulation results.

Engineering the switching dynamics of TiOx-based RRAM with Al doping

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis

2016-07-01

Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

Magnetic switch coupling to synchronize magnetic modulators

DOEpatents

Reed, K.W.; Kiekel, P.

1999-04-27

Apparatus for synchronizing the output pulses from a pair of magnetic switches is disclosed. An electrically conductive loop is provided between the pair of switches with the loop having windings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself. 13 figs.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, R.J.

1996-10-22

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, Rodney J.

1996-01-01

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

Elimination of image flicker in a fringe-field switching liquid crystal display by applying a bipolar voltage wave.

PubMed

Oh, Seung-Won; Park, Jun-Hee; Lee, Ji-Hoon; Yoon, Tae-Hoon

2015-09-07

Recently, low-frequency driving of liquid crystal display (LCD) panels to minimize power consumption has drawn much attention. In the case in which an LCD panel is driven by a fringe-field at a low frequency, the image flickering phenomenon occurs when the sign of the applied electric field is reversed. We investigated image flickering induced by the flexoelectric effect in a fringe-field switching (FFS) liquid crystal cell in terms of the transmittance difference between frames and the ripple phenomenon. Experimental results show that image flicker due to transmittance difference can be eliminated completely and that the ripple phenomena can be reduced significantly by applying a bipolar voltage wave to the FFS cell.

Design and realization of high voltage disconnector condition monitoring system

NASA Astrophysics Data System (ADS)

Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

2017-08-01

The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Bidirectional DC/DC Converter

NASA Astrophysics Data System (ADS)

Pedersen, F.

2008-09-01

The presented bidirectional DC/DC converter design concept is a further development of an already existing converter used for low battery voltage operation.For low battery voltage operation a high efficient low parts count DC/DC converter was developed, and used in a satellite for the battery charge and battery discharge function.The converter consists in a bidirectional, non regulating DC/DC converter connected to a discharge regulating Buck converter and a charge regulating Buck converter.The Bidirectional non regulating DC/DC converter performs with relatively high efficiency even at relatively high currents, which here means up to 35Amps.This performance was obtained through the use of power MOSFET's with on- resistances of only a few mille Ohms connected to a special transformer allowing paralleling several transistor stages on the low voltage side of the transformer. The design is patent protected. Synchronous rectification leads to high efficiency at the low battery voltages considered, which was in the range 2,7- 4,3 Volt DC.The converter performs with low switching losses as zero voltage zero current switching is implemented in all switching positions of the converter.Now, the drive power needed, to switch a relatively large number of low Ohm , hence high drive capacitance, power MOSFET's using conventional drive techniques would limit the overall conversion efficiency.Therefore a resonant drive consuming considerable less power than a conventional drive circuit was implemented in the converter.To the originally built and patent protected bidirectional non regulating DC/DC converter, is added the functionality of regulation.Hereby the need for additional converter stages in form of a Charge Buck regulator and a Discharge Buck regulator is eliminated.The bidirectional DC/DC converter can be used in connection with batteries, motors, etc, where the bidirectional feature, simple design and high performance may be useful.

Vacuum-surface flashover switch with cantilever conductors

DOEpatents

Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

2001-01-01

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

Investigation of a compact coaxially fed switched oscillator

NASA Astrophysics Data System (ADS)

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ˜0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

Investigation of a compact coaxially fed switched oscillator.

PubMed

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ~0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

Apparatus for producing voltage and current pulses

DOEpatents

Kirbie, Hugh; Dale, Gregory E.

2010-12-21

An apparatus having one or more modular stages for producing voltage and current pulses. Each module includes a diode charging means to charge a capacitive means that stores energy. One or more charging impedance means are connected to the diode charging means to provide a return current pathway. A solid-state switch discharge means, with current interruption capability, is connected to the capacitive means to discharge stored energy. Finally, a control means is provided to command the switching action of the solid-state switch discharge means.

Binary-Signal Recovery

NASA Technical Reports Server (NTRS)

Griebeler, Elmer L.

2011-01-01

Binary communication through long cables, opto-isolators, isolating transformers, or repeaters can become distorted in characteristic ways. The usual solution is to slow the communication rate, change to a different method, or improve the communication media. It would help if the characteristic distortions could be accommodated at the receiving end to ease the communication problem. The distortions come from loss of the high-frequency content, which adds slopes to the transitions from ones to zeroes and zeroes to ones. This weakens the definition of the ones and zeroes in the time domain. The other major distortion is the reduction of low frequency, which causes the voltage that defines the ones or zeroes to drift out of recognizable range. This development describes a method for recovering a binary data stream from a signal that has been subjected to a loss of both higher-frequency content and low-frequency content that is essential to define the difference between ones and zeroes. The method makes use of the frequency structure of the waveform created by the data stream, and then enhances the characteristics related to the data to reconstruct the binary switching pattern. A major issue is simplicity. The approach taken here is to take the first derivative of the signal and then feed it to a hysteresis switch. This is equivalent in practice to using a non-resonant band pass filter feeding a Schmitt trigger. Obviously, the derivative signal needs to be offset to halfway between the thresholds of the hysteresis switch, and amplified so that the derivatives reliably exceed the thresholds. A transition from a zero to a one is the most substantial, fastest plus movement of voltage, and therefore will create the largest plus first derivative pulse. Since the quiet state of the derivative is sitting between the hysteresis thresholds, the plus pulse exceeds the plus threshold, switching the hysteresis switch plus, which re-establishes the data zero to one transition

A nanoscale piezoelectric transformer for low-voltage transistors.

PubMed

Agarwal, Sapan; Yablonovitch, Eli

2014-11-12

A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

53. VIEW OF TIRRILL VOLTAGE REGULATOR LOCATED ON SOUTH WALL ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

53. VIEW OF TIRRILL VOLTAGE REGULATOR LOCATED ON SOUTH WALL OF CONTROL ROOM. THE SOLENOID COILS AT THE TOP RIGHT OF THE PHOTOGRAPH DETECT VARIATIONS IN VOLTAGE AND CURRENT. THE ARMATURES OF THESE COILS ACT ON A SPRING LOADED BEAM. MOVEMENT OF THIS BEAM INDIRECTLY CONTROL SWITCHES WHICH CAUSE RESISTANCE GRIDS TO BE SWITCHED IN OR OUT OF THE EXCITER GENERATOR FIELD COILS (SEE CT-142A-95). - New York, New Haven & Hartford Railroad, Cos Cob Power Plant, Sound Shore Drive, Greenwich, Fairfield County, CT

Resistive and Ferroelectric-Domain Switching in Multiferroic BiFeO3 Films

NASA Astrophysics Data System (ADS)

Ramirez, J. G.; Arango, I. C.; Gomez, M. F.; Dominguez, C.; Sulekar, S.; Cardona, A.; Trastoy, J.; Nino, J. C.; Schuller, I. K.; Gomez, M. E.

Resistive switching (RS) in oxides has attracted much attention due to its potential application for nonvolatile memory and neuromorphic computing devices. Here we study the voltage-induced RS mechanisms in metal/multiferroic/semiconductor (Au/BiFeO3/Nb:SrTiO3) thin film vertical devices. We found switching with RON and ROFF ratios as big as 0.16 at voltages starting at +/- 2V. Further voltage increase produced an intensification of the RS effects, until dielectric breakdown was reached. Interestingly, the voltage at which the RS effect appears coincides with the coercive voltage of the ferroelectric polarization in similar BiFeO3 films, as measured by piezoelectric force microscopy. This suggests that the primary RS mechanism is the ferroelectric switching. Impedance spectroscopy measurements show filamentary contributions after ferroelectric saturation, possible due to voltage-induced movement of charge defects across the device and therefore suggesting an additional RS mechanism. Work supported by: Univalle CI 7999; FAPA at Uniandes; Colciencias 120471250659 and 120424054303. J.T. acknowledges the support from the Fundación Areces (Spain); AFOSR and DoD for a Vannevar Bush Fellowship.

Magnetically switched power supply system for lasers

NASA Technical Reports Server (NTRS)

Pacala, Thomas J. (Inventor)

1987-01-01

A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.