Binary-Signal Recovery

NASA Technical Reports Server (NTRS)

Griebeler, Elmer L.

2011-01-01

Binary communication through long cables, opto-isolators, isolating transformers, or repeaters can become distorted in characteristic ways. The usual solution is to slow the communication rate, change to a different method, or improve the communication media. It would help if the characteristic distortions could be accommodated at the receiving end to ease the communication problem. The distortions come from loss of the high-frequency content, which adds slopes to the transitions from ones to zeroes and zeroes to ones. This weakens the definition of the ones and zeroes in the time domain. The other major distortion is the reduction of low frequency, which causes the voltage that defines the ones or zeroes to drift out of recognizable range. This development describes a method for recovering a binary data stream from a signal that has been subjected to a loss of both higher-frequency content and low-frequency content that is essential to define the difference between ones and zeroes. The method makes use of the frequency structure of the waveform created by the data stream, and then enhances the characteristics related to the data to reconstruct the binary switching pattern. A major issue is simplicity. The approach taken here is to take the first derivative of the signal and then feed it to a hysteresis switch. This is equivalent in practice to using a non-resonant band pass filter feeding a Schmitt trigger. Obviously, the derivative signal needs to be offset to halfway between the thresholds of the hysteresis switch, and amplified so that the derivatives reliably exceed the thresholds. A transition from a zero to a one is the most substantial, fastest plus movement of voltage, and therefore will create the largest plus first derivative pulse. Since the quiet state of the derivative is sitting between the hysteresis thresholds, the plus pulse exceeds the plus threshold, switching the hysteresis switch plus, which re-establishes the data zero to one transition, except now at the logic levels of the receiving circuit. Similarly, a transition from a one to a zero will be the most substantial and fastest minus movement of voltage and therefore will create the largest minus first derivative pulse. The minus pulse exceeds the minus threshold, switching the hysteresis switch minus, which re-establishes the data one to zero transition. This innovation has a large increase in tolerance for the degradation of the binary pattern of ones and zeroes, and can reject the introduction of noise in the form of low frequencies that can cause the voltage pattern to drift up or down, and also higher frequencies that are beyond the recognizable content in the binary transitions.

Ping-pong auto-zero amplifier with glitch reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Larson, Mark R

A ping-pong amplifier with reduced glitching is described. The ping-pong amplifier includes a nulling amplifier coupled to a switching network. The switching network is used to auto-zero a ping amplifier within a ping-pong amplifier. The nulling amplifier drives the output of a ping amplifier to a proper output voltage level during auto-zeroing of the ping amplifier. By being at a proper output voltage level, glitches associated with transitioning between a ping amplifier and a pong amplifier are reduced or eliminated.

The 120V 20A PWM switch for applications in high power distribution

NASA Astrophysics Data System (ADS)

Borelli, V.; Nimal, W.

1989-08-01

A 20A/120VDC (voltage direct current) PWM (Pulse Width Modulation) Solid State Power Controller (SSPC) developed under ESA contract to be used in the power distribution system of Columbus is described. The general characteristics are discussed and the project specification defined. The benefits of a PWM solution over a more conventional approach, for the specific application considered are presented. An introduction to the SSPC characteristics and a functional description are presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jacobina, C.B.; Silva, E.R.C. da; Lima, A.M.N.

This paper investigates the PWM operation of a four switch three phase inverter (FSTPI), in the case of digital implementation. Different switching sequence strategies for vector control are described and a digital scalar method is also presented. The influence of different switching patterns on the output voltage symmetry, current waveform and switching frequency are examined. The results obtained by employing the vector and scalar strategies are compared and a relationship between them is established. This comparison is based on analytical study and is corroborated either by the computer simulations and by the experimental results. The vector approach makes ease themore » understanding and analysis of the FSTPI, as well the choice of a PWM pattern. However, similar results may be obtained through the scalar approach, which has a simpler implementation. The experimental results of the use of the FSTPI and digital PWM to control an induction motor are presented.« less

Applying PWM to control overcurrents at unbalanced faults of force-commutated VSCs used as static var compensators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Y.; Ekstroem, A.

1997-01-01

This study is devoted to investigating the possibility of controlling the overcurrent of a forced-commutated voltage source converter (VSC) by PWM when the ac system is undergoing large unbalanced disturbance. The converter is supposed to be used as a static var compensator at a high power level. A novel control strategy is proposed for controlling the reactive current and the dc side voltage independently. Digital simulation results are presented and compared with the results by using just the reactive current control with fundamental switching frequency.

System and method for determining stator winding resistance in an AC motor using motor drives

DOEpatents

Lu, Bin; Habetler, Thomas G; Zhang, Pinjia

2013-02-26

A system and method for determining the stator winding resistance of AC motors is provided. The system includes an AC motor drive having an input connectable to an AC source and an output connectable to an input terminal of an AC motor, a pulse width modulation (PWM) converter having switches therein to control current flow and terminal voltages in the AC motor, and a control system connected to the PWM converter. The control system generates a command signal to cause the PWM converter to control an output of the AC motor drive corresponding to an input to the AC motor, selectively generates a modified command signal to cause the PWM converter to inject a DC signal into the output of the AC motor drive, and determines a stator winding resistance of the AC motor based on the DC signal of at least one of the voltage and current.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

PubMed

Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

2018-04-01

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An Energy Saving Green Plug Device for Nonlinear Loads

NASA Astrophysics Data System (ADS)

Bloul, Albe; Sharaf, Adel; El-Hawary, Mohamed

2018-03-01

The paper presents a low cost a FACTS Based flexible fuzzy logic based modulated/switched tuned arm filter and Green Plug compensation (SFC-GP) scheme for single-phase nonlinear loads ensuring both voltage stabilization and efficient energy utilization. The new Green Plug-Switched filter compensator SFC modulated LC-Filter PWM Switched Capacitive Compensation Devices is controlled using a fuzzy logic regulator to enhance power quality, improve power factor at the source and reduce switching transients and inrush current conditions as well harmonic contents in source current. The FACTS based SFC-GP Device is a member of family of Green Plug/Filters/Compensation Schemes used for efficient energy utilization, power quality enhancement and voltage/inrush current/soft starting control using a dynamic error driven fuzzy logic controller (FLC). The device with fuzzy logic controller is validated using the Matlab / Simulink Software Environment for enhanced power quality (PQ), improved power factor and reduced inrush currents. This is achieved using modulated PWM Switching of the Filter-Capacitive compensation scheme to cope with dynamic type nonlinear and inrush cyclical loads..

Multilevel DC link inverter

DOEpatents

Su, Gui-Jia

2003-06-10

A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

High Performance ZVT with Bus Clamping Modulation Technique for Single Phase Full Bridge Inverters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Yinglai; Ayyanar, Raja

2016-03-20

This paper proposes a topology based on bus clamping modulation and zero-voltage-transition (ZVT) technique to realize zero-voltage-switching (ZVS) for all the main switches of the full bridge inverters, and inherent ZVS and/or ZCS for the auxiliary switches. The advantages of the strategy include significant reduction in the turn-on loss of the ZVT auxiliary switches which typically account for a major part of the total loss in other ZVT circuits, and reduction in the voltage ratings of auxiliary switches. The modulation scheme and the commutation stages are analyzed in detail. Finally, a 1kW, 500 kHz switching frequency inverter of the proposedmore » topology using SiC MOSFETs has been built to validate the theoretical analysis. The ZVT with bus clamping modulation technique of fixed timing and adaptive timing schemes are implemented in DSP TMS320F28335 resulting in full ZVS for the main switches in the full bridge inverter. The proposed scheme can save up to 33 % of the switching loss compared with no ZVT case.« less

Performance of dual inverter fed open end winding induction motor drive using carrier shift PWM techniques

NASA Astrophysics Data System (ADS)

Priya Darshini, B.; Ranjit, M.; Babu, V. Ramesh

2018-04-01

In this paper different Multicarrier PWM (MCPWM) techniques are proposed for dual inverter fed open end induction motor (IM) drive to achieve multilevel operation. To generate the switching pulses for the dual inverter sinusoidal modulating signal is compared with multi carrier signals. A common mode voltage (CMV) has been analyzed in the proposed open end winding induction motor drive. All the proposed techniques mitigate the CMV along with the harmonic distortion in the phase voltage. To authenticate the proposed work several simulation techniques have been carried out using MATLAB/SIMULINK and the corresponding results are presented and compared.

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

PubMed

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

High-frequency AC/DC converter with unity power factor and minimum harmonic distortion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wernekinch, E.R.

1987-01-01

The power factor is controlled by adjusting the relative position of the fundamental component of an optimized PWM-type voltage with respect to the supply voltage. Current harmonic distortion is minimized by the use of optimized firing angles for the converter at a frequency where GTO's can be used. This feature makes this approach very attractive at power levels of 100 to 600 kW. To obtain the optimized PWM pattern, a steepest descent digital computer algorithm is used. Digital-computer simulations are performed and a low-power model is constructed and tested to verify the concepts and the behavior of the model. Experimentalmore » results show that unity power factor is achieved and that the distortion in the phase currents is 10.4% at 90% of full load. This is less than achievable with sinusoidal PWM, harmonic elimination, hysteresis control, and deadbeat control for the same switching frequency.« less

Design and test hardware for a solar array switching unit

NASA Technical Reports Server (NTRS)

Patil, A. R.; Cho, B. H.; Sable, D.; Lee, F. C.

1992-01-01

This paper describes the control of a pulse width modulated (PWM) type sequential shunt switching unit (SSU) for spacecraft applications. It is found that the solar cell output capacitance has a significant impact on SSU design. Shorting of this cell capacitance by the PWM switch causes input current surges. These surges are minimized by the use of a series filter inductor. The system with a filter is analyzed for ripple and the control to output-voltage transfer function. Stable closed loop design considerations are discussed. The results are supported by modeling and measurements of loop gain and of closed-loop bus impedance on test hardware for NASA's 120 V Earth Observation System (EOS). The analysis and modeling are also applicable to NASA's 160 V Space Station power system.

Hybrid switch for resonant power converters

DOEpatents

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Design and Implementation of 13 Levels Multilevel Inverter for Photovoltaic System

NASA Astrophysics Data System (ADS)

Subramani, C.; Dhineshkumar, K.; Palanivel, P.

2018-04-01

This paper approaches the appearing and modernization of S-Type PV based 13- level multilevel inverter with less quantity of switch. The current S-Type Multi level inverter contains more number of switches and voltage sources. Multilevel level inverter is a be understandable among the most gainful power converters for high power application and present day applications with reduced switches. The fundamental good arrangement of the 13-level multilevel inverter is to get ventured voltage from a couple of levels of DC voltages.. The controller gives actual way day and age to switches through driver circuit using PWM methodology. The execution assessment of proposed multilevel inverter is checked using MATLAB/Simulink. This is the outstanding among other techniquem appeared differently in relation to all other existing system

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Auxiliary quasi-resonant dc tank electrical power converter

DOEpatents

Peng, Fang Z.

2006-10-24

An auxiliary quasi-resonant dc tank (AQRDCT) power converter with fast current charging, voltage balancing (or charging), and voltage clamping circuits is provided for achieving soft-switched power conversion. The present invention is an improvement of the invention taught in U.S. Pat. No. 6,111,770, herein incorporated by reference. The present invention provides faster current charging to the resonant inductor, thus minimizing delay time of the pulse width modulation (PWM) due to the soft-switching process. The new AQRDCT converter includes three tank capacitors or power supplies to achieve the faster current charging and minimize the soft-switching time delay. The new AQRDCT converter further includes a voltage balancing circuit to charge and discharge the three tank capacitors so that additional isolated power supplies from the utility line are not needed. A voltage clamping circuit is also included for clamping voltage surge due to the reverse recovery of diodes.

Thin grain oriented electrical steel for PWM voltages fed magnetic cores

NASA Astrophysics Data System (ADS)

Belgrand, Thierry; Lemaître, Régis; Benabou, Abdelkader; Blaszkowski, Jonathan; Wang, Chaoyong

2018-04-01

This paper reports on performances of high permeability grain oriented electrical steel when used in association with power electronic switching devices. Loss measurement results obtained from the Epstein test, using sinusoidal or various PWM voltages in medium frequency range, show that for both studied thicknesses (HGO 0.23mm and HGO 0.18mm), comparing performances at a fixed induction level between the various situations may not be the most convenient method. The effect of magnetic domain refinement has been investigated. After having shown the interest of lowering the thickness, an alternative way of looking at losses is proposed that may help to design the magnetic core when it comes to the matter of reducing size in considering frequency and magnetization levels.

High-Voltage Power Supply With Fast Rise and Fall Times

NASA Technical Reports Server (NTRS)

Bearden, Douglas B.; Acker, Richard M.; Kapuslka, Robert E.

2007-01-01

A special-purpose high-voltage power supply can be electronically switched on and off with fast rise and fall times, respectively. The output potential is programmable from 20 to 1,250 V. An output current of 50 A can be sustained at 1,250 V. The power supply was designed specifically for electronically shuttering a microchannel plate in an x-ray detector that must operate with exposure times as short as 1 ms. The basic design of the power supply is also adaptable to other applications in which there are requirements for rapid slewing of high voltages. The power-supply circuitry (see figure) includes a preregulator, which is used to program the output at 1/30 of the desired output potential. After the desired voltage has been set, the outputs of a pulse width modulator (PWM) are enabled and used to amplify the preregulator output potential by 30. The amplification is achieved by use of two voltage doublers with a transformer that has two primary and two secondary windings. A resistor is used to limit the current by controlling the drive voltage of two field-effect transistors (FETs) during turn-on of the PWM. A pulse transformer is used to turn on four FETs to short-circuit four output capacitors when the outputs of the PWM have been disabled. The most notable aspects of the performance of the power supply are a rise time of only 80 s and a fall time of only 60 s at a load current of 50 A or less. Another notable aspect is that the application of a 0-to-5-V square wave to a shutdown pin of the PWM causes the production of a 0-to-1,250-V square wave at the output terminals.

Methods, systems and apparatus for adjusting duty cycle of pulse width modulated (PWM) waveforms

DOEpatents

Gallegos-Lopez, Gabriel; Kinoshita, Michael H; Ransom, Ray M; Perisic, Milun

2013-05-21

Embodiments of the present invention relate to methods, systems and apparatus for controlling operation of a multi-phase machine in a vector controlled motor drive system when the multi-phase machine operates in an overmodulation region. The disclosed embodiments provide a mechanism for adjusting a duty cycle of PWM waveforms so that the correct phase voltage command signals are applied at the angle transitions. This can reduce variations/errors in the phase voltage command signals applied to the multi-phase machine so that phase current may be properly regulated thus reducing current/torque oscillation, which can in turn improve machine efficiency and performance, as well as utilization of the DC voltage source.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for high-voltage X-ray DC-DC power converter with a voltage multiplier strategy has some specified voltage pattern tracking voltage response performances under rapid rising time and no overshoot in start transient tube voltage as well as the minimized steady-state voltage ripple in tube voltage.

Ultrafast Power Processor for Smart Grid Power Module Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

MAITRA, ARINDAM; LITWIN, RAY; lai, Jason

This project’s goal was to increase the switching speed and decrease the losses of the power semiconductor devices and power switch modules necessary to enable Smart Grid energy flow and control equipment such as the Ultra-Fast Power Processor. The primary focus of this project involves exploiting the new silicon-based Super-GTO (SGTO) technology and build on prototype modules already being developed. The prototype super gate-turn-off thyristor (SGTO) has been tested fully under continuously conducting and double-pulse hard-switching conditions for conduction and switching characteristics evaluation. The conduction voltage drop measurement results indicate that SGTO has excellent conduction characteristics despite inconsistency among somemore » prototype devices. Tests were conducted with two conditions: (1) fixed gate voltage and varying anode current condition, and (2) fixed anode current and varying gate voltage condition. The conduction voltage drop is relatively a constant under different gate voltage condition. In terms of voltage drop as a function of the load current, there is a fixed voltage drop about 0.5V under zero current condition, and then the voltage drop is linearly increased with the current. For a 5-kV voltage blocking device that may operate under 2.5-kV condition, the projected voltage drop is less than 2.5 V under 50-A condition, or 0.1%. If the device is adopted in a converter operating under soft-switching condition, then the converter can achieve an ultrahigh efficiency, typically above 99%. The two-pulse switching test results indicate that SGTO switching speed is very fast. The switching loss is relatively low as compared to that of the insulated-gate-bipolar-transistors (IGBTs). A special phenomenon needs to be noted is such a fast switching speed for the high-voltage switching tends to create an unexpected Cdv/dt current, which reduces the turn-on loss because the dv/dt is negative and increases the turn-off loss because the dv/dt is positive. As a result, the turn-on loss at low current is quite low, and the turn-off loss at low current is relatively high. The phenomenon was verified with junction capacitance measurement along with the dv/dt calculation. Under 2-kV test condition, the turn-on and turn-off losses at 25-A is about 3 and 9 mJ, respectively. As compared to a 4.5-kV, 60-A rated IGBT, which has turn-on and turn-off losses about 25 and 20 mJ under similar test condition, the SGTO shows significant switching loss reduction. The switching loss depends on the switching frequency, but under hard-switching condition, the SGTO is favored to the IGBT device. The only concern is during low current turn-on condition, there is a voltage bump that can translate to significant power loss and associated heat. The reason for such a current bump is not known from this study. It is necessary that the device manufacturer perform though test and provide the answer so the user can properly apply SGTO in pulse-width-modulated (PWM) converter and inverter applications.« less

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Analysis, design, and control of a transcutaneous power regulator for artificial hearts.

PubMed

Qianhong Chen; Siu Chung Wong; Tse, C K; Xinbo Ruan

2009-02-01

Based on a generic transcutaneous transformer model, a remote power supply using a resonant topology for use in artificial hearts is analyzed and designed for easy controllability and high efficiency. The primary and secondary windings of the transcutaneous transformer are positioned outside and inside the human body, respectively. In such a transformer, the alignment and gap may change with external positioning. As a result, the coupling coefficient of the transcutaneous transformer is also varying, and so are the two large leakage inductances and the mutual inductance. Resonant-tank circuits with varying resonant-frequency are formed from the transformer inductors and external capacitors. For a given range of coupling coefficients, an operating frequency corresponding to a particular coupling coefficient can be found, for which the voltage transfer function is insensitive to load. Prior works have used frequency modulation to regulate the output voltage under varying load and transformer coupling. The use of frequency modulation may require a wide control frequency range which may extend well above the load insensitive frequency. In this paper, study of the input-to-output voltage transfer function is carried out, and a control method is proposed to lock the switching frequency at just above the load insensitive frequency for optimized efficiency at heavy loads. Specifically, operation at above resonant of the resonant circuits is maintained under varying coupling-coefficient. Using a digital-phase-lock-loop (PLL), zero-voltage switching is achieved in a full-bridge converter which is also programmed to provide output voltage regulation via pulsewidth modulation (PWM). A prototype transcutaneous power regulator is built and found to to perform excellently with high efficiency and tight regulation under variations of the alignment or gap of the transcutaneous transformer, load and input voltage.

A study on stimulation of DC high voltage power of LCC series parallel resonant in projectile velocity measurement system

NASA Astrophysics Data System (ADS)

Lu, Dong-dong; Gu, Jin-liang; Luo, Hong-e.; Xia, Yan

2017-10-01

According to specific requirements of the X-ray machine system for measuring velocity of outfield projectile, a DC high voltage power supply system is designed for the high voltage or the smaller current. The system comprises: a series resonant circuit is selected as a full-bridge inverter circuit; a high-frequency zero-current soft switching of a high-voltage power supply is realized by PWM output by STM32; a nanocrystalline alloy transformer is chosen as a high-frequency booster transformer; and the related parameters of an LCC series-parallel resonant are determined according to the preset parameters of the transformer. The concrete method includes: a LCC series parallel resonant circuit and a voltage doubling circuit are stimulated by using MULTISM and MATLAB; selecting an optimal solution and an optimal parameter of all parts after stimulation analysis; and finally verifying the correctness of the parameter by stimulation of the whole system. Through stimulation analysis, the output voltage of the series-parallel resonant circuit gets to 10KV in 28s: then passing through the voltage doubling circuit, the output voltage gets to 120KV in one hour. According to the system, the wave range of the output voltage is so small as to provide the stable X-ray supply for the X-ray machine for measuring velocity of outfield projectile. It is fast in charging and high in efficiency.

Power Quality Control and Design of Power Converter for Variable-Speed Wind Energy Conversion System with Permanent-Magnet Synchronous Generator

PubMed Central

Oğuz, Yüksel; Güney, İrfan; Çalık, Hüseyin

2013-01-01

The control strategy and design of an AC/DC/AC IGBT-PMW power converter for PMSG-based variable-speed wind energy conversion systems (VSWECS) operation in grid/load-connected mode are presented. VSWECS consists of a PMSG connected to a AC-DC IGBT-based PWM rectifier and a DC/AC IGBT-based PWM inverter with LCL filter. In VSWECS, AC/DC/AC power converter is employed to convert the variable frequency variable speed generator output to the fixed frequency fixed voltage grid. The DC/AC power conversion has been managed out using adaptive neurofuzzy controlled inverter located at the output of controlled AC/DC IGBT-based PWM rectifier. In this study, the dynamic performance and power quality of the proposed power converter connected to the grid/load by output LCL filter is focused on. Dynamic modeling and control of the VSWECS with the proposed power converter is performed by using MATLAB/Simulink. Simulation results show that the output voltage, power, and frequency of VSWECS reach to desirable operation values in a very short time. In addition, when PMSG based VSWECS works continuously with the 4.5 kHz switching frequency, the THD rate of voltage in the load terminal is 0.00672%. PMID:24453905

Power quality control and design of power converter for variable-speed wind energy conversion system with permanent-magnet synchronous generator.

PubMed

Oğuz, Yüksel; Güney, İrfan; Çalık, Hüseyin

2013-01-01

The control strategy and design of an AC/DC/AC IGBT-PMW power converter for PMSG-based variable-speed wind energy conversion systems (VSWECS) operation in grid/load-connected mode are presented. VSWECS consists of a PMSG connected to a AC-DC IGBT-based PWM rectifier and a DC/AC IGBT-based PWM inverter with LCL filter. In VSWECS, AC/DC/AC power converter is employed to convert the variable frequency variable speed generator output to the fixed frequency fixed voltage grid. The DC/AC power conversion has been managed out using adaptive neurofuzzy controlled inverter located at the output of controlled AC/DC IGBT-based PWM rectifier. In this study, the dynamic performance and power quality of the proposed power converter connected to the grid/load by output LCL filter is focused on. Dynamic modeling and control of the VSWECS with the proposed power converter is performed by using MATLAB/Simulink. Simulation results show that the output voltage, power, and frequency of VSWECS reach to desirable operation values in a very short time. In addition, when PMSG based VSWECS works continuously with the 4.5 kHz switching frequency, the THD rate of voltage in the load terminal is 0.00672%.

An Improved Power Quality BIBRED Converter-Based VSI-Fed BLDC Motor Drive

NASA Astrophysics Data System (ADS)

Singh, Bhim; Bist, Vashist

2014-01-01

This paper presents an IHQRR (integrated high-quality rectifier regulator) BIBRED (boost integrated buck rectifier energy storage DC-DC) converter-based VSI (voltage source inverter)-fed BLDC (brushless DC) motor drive. The speed control of BLDC motor is achieved by controlling the DC link voltage of the VSI using a single voltage sensor. This allows VSI to operate in fundamental frequency switching mode for electronic commutation of BLDC motor which reduces the switching losses due to high-frequency switching used in conventional approach of PWM (pulse width modulation)-based VSI-fed BLDC motor drive. A BIBRED converter is operated in a dual-DCM (discontinuous conduction mode) thus using a voltage follower approach for PFC (power factor correction) and DC link voltage control. The performance of the proposed drive is evaluated for improved power quality over a wide range of speed control and supply voltage variation for demonstrating the behavior of proposed drive. The power quality indices thus obtained are within the recommended limits by international PQ (power quality) standards such as IEC 61000-3-2.

dc analysis and design of zero-voltage-switched multi-resonant converters

NASA Astrophysics Data System (ADS)

Tabisz, Wojciech A.; Lee, Fred C.

Recently introduced multiresonant converters (MRCs) provide zero-voltage switching (ZVS) of both active and passive switches and offer a substantial reduction of transistor voltage stress and an increase of load range, compared to their quasi-resonant converter counterparts. Using the resonant switch concept, a simple, generalized analysis of ZVS MRCs is presented. The conversion ratio and voltage stress characteristics are derived for basic ZVS MRCs, including buck, boost, and buck/boost converters. Based on the analysis, a design procedure that optimizes the selection of resonant elements for maximum conversion efficiency is proposed.

Design of power electronics for TVC EMA systems

NASA Technical Reports Server (NTRS)

Nelms, R. Mark

1993-01-01

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

High Efficiency Single Output ZVS-ZCS Voltage Doubled Flyback Converter

NASA Astrophysics Data System (ADS)

Kaliyaperumal, Deepa; Saju, Hridya Merin; Kumar, M. Vijaya

2016-06-01

A switch operating at high switching frequency increases the switching losses of the converter resulting in lesser efficiency. Hence this paper proposes a new topology which has resonant switches [zero voltage switching (ZVS)] in the primary circuit to eliminate the above said disadvantages, and voltage doubler zero current switching (ZCS) circuit in the secondary to double the output voltage, and hence the output power, power density and efficiency. The design aspects of the proposed topology for a single output of 5 V at 50 kHz, its simulation and hardware results are discussed in detail. The analysis of the results obtained from a 2.5 W converter reveals the superiority of the proposed converter.

Vibration and acoustic noise emitted by dry-type air-core reactors under PWM voltage excitation

NASA Astrophysics Data System (ADS)

Li, Jingsong; Wang, Shanming; Hong, Jianfeng; Yang, Zhanlu; Jiang, Shengqian; Xia, Shichong

2018-05-01

According to coupling way between the magnetic field and the structural order, structure mode is discussed by engaging finite element (FE) method and both natural frequency and modal shape for a dry-type air-core reactor (DAR) are obtained in this paper. On the basis of harmonic response analysis, electromagnetic force under PWM (Pulse Width Modulation) voltage excitation is mapped with the structure mesh, the vibration spectrum is gained and the consequences represents that the whole structure vibration predominates in the radial direction, with less axial vibration. Referring to the test standard of reactor noise, the rules of emitted noise of the DAR are measured and analyzed at chosen switching frequency matches the sample resonant frequency and the methods of active vibration and noise reduction are put forward. Finally, the low acoustic noise emission of a prototype DAR is verified by measurement.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

PWM Switching Strategy for Torque Ripple Minimization in BLDC Motor

NASA Astrophysics Data System (ADS)

Salah, Wael A.; Ishak, Dahaman; Hammadi, Khaleel J.

2011-05-01

This paper describes a new PWM switching strategy to minimize the torque ripples in BLDC motor which is based on sensored rotor position control. The scheme has been implemented using a PIC microcontroller to generate a modified Pulse Width Modulation (PWM) signals for driving power inverter bridge. The modified PWM signals are successfully applied to the next up-coming phase current such that its current rise is slightly delayed during the commutation instant. Experimental results show that the current waveforms of the modified PWM are smoother than that in conventional PWM technique. Hence, the output torque exhibits lower ripple contents.

Delta connected resonant snubber circuit

DOEpatents

Lai, J.S.; Peng, F.Z.; Young, R.W. Sr.; Ott, G.W. Jr.

1998-01-20

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 36 figs.

Delta connected resonant snubber circuit

DOEpatents

Lai, Jih-Sheng; Peng, Fang Zheng; Young, Sr., Robert W.; Ott, Jr., George W.

1998-01-01

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

A Single Phase 7-Level Cascade Inverter Topology with Reduced Number of Switches on Resistive Load by Using PWM

NASA Astrophysics Data System (ADS)

Hamzah, H. H.; Ponniran, A.; Kasiran, A. N.; Harimon, M. A.; Gendum, D. A.; Yatim, M. H.

2018-04-01

This paper discussing design principles of inverter structure with reduced number of semiconductor devices of seven levels symmetric H-bridge multilevel inverter (MLI) topology. The aim of this paper is to design an inverter circuit with reduction of semiconductor losses, converter size and development cost. The H-bridge and auxiliary structures were considered in order to achieve seven levels output voltage. The performance of design circuit is compared with conventional seven levels structure in terms of voltage output. The circuit development consists of seven switches and three diode. A basic modulation technique is used to confirm the designed circuit. The results show that the designed circuit is able to convert seven level output voltage with low total harmonics distortion (THD) in voltage fundamental output. According to the results, fundamental output voltage is increased up to 8.314%, and the THD is decreased up to 0.81% compared to the conventional seven level inverter.

Auxiliary resonant DC tank converter

DOEpatents

Peng, Fang Z.

2000-01-01

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

Study of switching transients in high frequency converters

NASA Technical Reports Server (NTRS)

Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony

1993-01-01

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.

A new very high voltage semiconductor switch

NASA Technical Reports Server (NTRS)

Sundberg, G. R.

1985-01-01

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Design of 5 V DC to 20 V DC switching regulator for power supply module

NASA Astrophysics Data System (ADS)

Azmi, N. A.; Murad, S. A. Z.; Harun, A.; Ismail, R. C.; Isa, M. N. M.; Zulkifeli, M. A.

2017-09-01

This paper presents the design of 5 V to 20 V DC switching regulator for power supply module. A voltage multiplier which consists of cascaded diode-capacitor combination is used in order to obtain a high voltage power supply. Due to power loss that has occurred in a stray of component arrangement, the proposed design employs a pulse width modulation (PWM) controller circuit with an inclusion of a capacitor, diode, and inductor components. The input supply of 5 V DC to LT1618 controller circuit has produced 20.35 V based from simulation results. Meanwhile, the measurement results of 19.36 V are obtained and the feedback signal is required for the purpose of stabilizing the output. The proposed design can reduce the components as well as the PCB size, thus minimizing the overall cost of making a switching regulator for power supply module.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

NASA Astrophysics Data System (ADS)

Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

1996-02-01

Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

Utilizing zero-sequence switchings for reversible converters

DOEpatents

Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

2004-12-14

A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

Resonant snubber inverter

DOEpatents

Lai, Jih-Sheng; Young, Sr., Robert W.; Chen, Daoshen; Scudiere, Matthew B.; Ott, Jr., George W.; White, Clifford P.; McKeever, John W.

1997-01-01

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Resonant snubber inverter

DOEpatents

Lai, J.S.; Young, R.W. Sr.; Chen, D.; Scudiere, M.B.; Ott, G.W. Jr.; White, C.P.; McKeever, J.W.

1997-06-24

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 14 figs.

Radiometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strickland, J. I.

1985-07-02

A radiometer of the switched type has an R.F. switch connecting a detector selectively either to an antenna whose temperature (in terms of noise energy) is to be determined, or to a reference temperature, i.e. a resistive termination. The detector output is passed through an amplifier whose gain is switched between positive and negative values (for example +1 and -1) synchronously with the R.F. switch. The output of the switched gain amplifier is integrated to produce a rising voltage when the gain is positive and a falling one when it is negative. When it is positive the detector is connectedmore » to the antenna. By means of a zero crossing detector, a counter is started when this voltage crosses zero. After a fixed period, the R.F. switch and switched gain amplifier are reversed by the counter to cause the voltage to fall in accordance with the temperature of the resistive termination. The zero crossing detector and a counter measure the time interval until the voltage again crosses zero, such time interval being compared to the fixed period to provide a comparison of the unknown and reference temperatures independent of the gain of the detector, which is a valuable improvement over prior radiometers. Also, by measuring time rather than voltage, the arrangement facilitates providing a digital output more suitable for storage and transmission of the data than the analog output of prior radiometers. The instrument, which is relatively simple, rugged and compact, lends itself well to unattended use in monitoring the effect of rain storms on transmission in the 11.7 to 12.2 GHz band employed for satelite communication.« less

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

NASA Technical Reports Server (NTRS)

Burns, Bradley M. (Inventor); Blalock, Norman N. (Inventor)

2011-01-01

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

A Transformerless Hybrid Active Filter Capable of Complying with Harmonic Guidelines for Medium-Voltage Motor Drives

NASA Astrophysics Data System (ADS)

Kondo, Ryota; Akagi, Hirofumi

This paper presents a transformerless hybrid active filter that is integrated into medium-voltage adjustable-speed motor drives for fans, pumps, and compressors without regenerative braking. The authors have designed and constructed a three-phase experimental system rated at 400V and 15kW, which is a downscaled model from a feasible 6.6-kV 1-MW motor drive system. This system consists of the hybrid filter connecting a passive filter tuned to the 7th harmonic filter in series with an active filter that is based on a three-level diode-clamped PWM converter, as well as an adjustable-speed motor drive in which a diode rectifier is used as the front end. The hybrid filter is installed on the ac side of the diode rectifier with no line-frequency transformer. The downscaled system has been exclusively tested so as to confirm the overall compensating performance of the hybrid filter and the filtering performance of a switching-ripple filter for mitigating switching-ripple voltages produced by the active filter. Experimental results verify that the hybrid filter achieves harmonic compensation of the source current in all the operating regions from no-load to the rated-load conditions, and that the switching-ripple filter reduces the switching-ripple voltages as expected.

Effect of different methods of pulse width modulation on power losses in an induction motor

NASA Astrophysics Data System (ADS)

Gulyaev, Alexander; Fokin, Dmitrii; Shuharev, Sergey; Ten, Evgenii

2017-10-01

We consider the calculation of modulation power losses in a system “induction motor-inverter” for various pulse width modulation (PWM) methods of the supply voltage. Presented values of modulation power losses are the result of modeling a system “DC link - two-level three-phase voltage inverter - induction motor - load”. In this study the power losses in a system “induction motor - inverter” are computed, as well as losses caused by higher harmonics of PWM supply voltage, followed by definition of active power consumed by the DC link for a specified value mechanical power on the induction motor shaft. Mechanical power was determined by the rotation speed and the torque on the motor shaft in various quasi-sinusoidal supply voltage PWM modes. These calculations reveal the best coefficient of performance (COP) in a system of a variable frequency drive (VFD) with independent voltage inverter controlled by induction motor PWM.

Impact analysis of tap switch out of step for converter transformer

NASA Astrophysics Data System (ADS)

Hong-yue, ZHANG; Zhen-hua, ZHANG; Zhang-xue, XIONG; Gao-wang, YU

2017-06-01

AC transformer load regulation is mainly used to adjust the load side voltage level, improve the quality of power supply, the voltage range is relatively narrow. In DC system, converter transformer is the core equipment of AC and DC power converter and inverter. converter transformer tap adjustment can maintain the normal operation of the converter in small angle range control, the absorption of reactive power, economic operation, valve less stress, valve damping circuit loss, AC / DC harmonic component is also smaller. In this way, the tap switch action is more frequent, and a large range of the tap switch adjustment is required. Converter transformer with a more load voltage regulation switch, the voltage regulation range of the switch is generally 20~30%, the adjustment of each file is 1%~2%. Recently it is often found that the tap switch of Converter Transformers is out of step in Converter station. In this paper, it is analyzed in detail the impact of tap switch out of step for differential protection, overexcitation protection and zero sequence over current protection. Analysis results show that: the tap switch out of step has no effect on the differential protection and the overexcitation protection including the tap switch. But the tap switch out of step has effect on zero sequence overcurrent protection of out of step star-angle converter transformer. The zero sequence overcurrent protection will trip when the tap switch out of step is greater than 3 for out of step star-angle converter transformer.

Research on the Control Strategy for Grid-side Converter of PWM Doubly Fed Induction Wind Power Generators

NASA Astrophysics Data System (ADS)

Liu, Yifang; Wang, Zhijie; Li, Renfu; Jiang, Xiuchen; Sheng, Gehao; Liu, Tianyu; Liu, Sanming

2017-05-01

When the grid voltage drop, over current of transient rotor and over voltage may damage the power electronic devices. The attenuation of electromagnetic torque will lead to speed up. This paper proposes an improved feed-forward control strategy and its application in the PWM converter. When the PWM converter on voltage drops, bus voltage will be more stable. So over current problems of the DFIG rotor side can be reduced, and it also can improve voltage regulation speed of the DC bus voltage and reduce the oscillation amplitude. Furthermore, the stability of doubly fed wind generator system can be improved. The simulation results verify the validity of the modified control strategy.

State-plane analysis of zero-voltage-switching resonant dc/dc power converters

NASA Astrophysics Data System (ADS)

Kazimierczuk, Marian K.; Morse, William D.

The state-plane analysis technique for the zero-voltage-switching resonant dc/dc power converter family of topologies, namely the buck, boost, buck-boost, and Cuk converters is established. The state plane provides a compression of information that allows the designer to uniquely examine the nonlinear dynamics of resonant converter operation. Utilizing the state plane, resonant converter modes of operation are examined and the switching frequencies are derived for the boundaries between these modes, including the boundary of energy conversion.

Solar power generation system for reducing leakage current

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Hung, Chih-Yi

2018-04-01

This paper proposes a transformer-less multi-level solar power generation system. This solar power generation system is composed of a solar cell array, a boost power converter, an isolation switch set and a full-bridge inverter. A unipolar pulse-width modulation (PWM) strategy is used in the full-bridge inverter to attenuate the output ripple current. Circuit isolation is accomplished by integrating the isolation switch set between the solar cell array and the utility, to suppress the leakage current. The isolation switch set also determines the DC bus voltage for the full-bridge inverter connecting to the solar cell array or the output of the boost power converter. Accordingly, the proposed transformer-less multi-level solar power generation system generates a five-level voltage, and the partial power of the solar cell array is also converted to AC power using only the full-bridge inverter, so the power efficiency is increased. A prototype is developed to validate the performance of the proposed transformer-less multi-level solar power generation system.

Permanent magnet DC motor control by using arduino and motor drive module BTS7960

NASA Astrophysics Data System (ADS)

Syukriyadin, S.; Syahrizal, S.; Mansur, G.; Ramadhan, H. P.

2018-05-01

This study proposes a control system for permanent magnet DC (PMDC) motor. PMDC drive control system has two critical parameters: control and monitoring. Control system includes rotation speed control and direction of rotation of motor using motor drive module BTS7960. The PWM signal has a fixed frequency of waves with varying duty cycles (between 0% and 100%), so the motor rotation can be regulated gradually using a potentiometer already programmed on the Arduino Uno board. The motor rotation direction setting uses the H-bridge circuit method using a 3-way switch to set the direction of forward-reverse rotation of the motor. The monitoring system includes measurements of rotational speed, current, and voltage. Motor rotation speed can be adjusted from the armature voltage settings through the duty cycle PWM setting so that the motor speed can be increased or decreased by the desired duty cycle. From the unload PMDC motor test results it has also been shown that the torque of the motor is relatively constant when there is a change in speed from low rpm to high rpm or vice versa.

Reconfigurable optofluidic switch for generation of optical pulse width modulation based on tunable reflective interface.

PubMed

Mansuori, M; Zareei, G H; Hashemi, H

2015-10-01

We present a numerical method for generation of optical pulse width modulation (PWM) based on tunable reflective interface by using a microfluidic droplet. We demonstrate a single layer, planar, optofluidic PWM switch that is driven by excited alternating microbubbles. The main parameters of generation of this PWM such as frequency and speed of switching can be controlled by the mass flow rates of input fluids, and the shape of plug or droplet. Advantages of this design are the reconfigurability in design and the easy control of the switching parameters. The validation of the proposed design is carried out by employing the finite element method (FEM) for the mechanical simulation and the finite-difference time-domain (FDTD) for the optical simulation.

Low Temperature Operation of a Switching Power Converter

NASA Technical Reports Server (NTRS)

Anglada-Sanchez, Carlos R.; Perez-Feliciano, David; Ray, Biswajit

1997-01-01

The low temperature operation of a 48 W, 50 kHz, 36/12 V pulse width modulated (PWM) buck de-de power converter designed with standard commercially available components and devices is reported. The efficiency of the converter increased from 85.6% at room temperature (300 K) to 92.0% at liquid nitrogen temperature (77 K). The variation of power MOSFET, diode rectifier, and output filter inductor loss with temperature is discussed. Relevant current, voltage. and power waveforms are also included.

Optimized MPPT algorithm for boost converters taking into account the environmental variables

NASA Astrophysics Data System (ADS)

Petit, Pierre; Sawicki, Jean-Paul; Saint-Eve, Frédéric; Maufay, Fabrice; Aillerie, Michel

2016-07-01

This paper presents a study on the specific behavior of the Boost DC-DC converters generally used for powering conversion of PV panels connected to a HVDC (High Voltage Direct Current) Bus. It follows some works pointing out that converter MPPT (Maximum Power Point Tracker) is severely perturbed by output voltage variations due to physical dependency of parameters as the input voltage, the output voltage and the duty cycle of the PWM switching control of the MPPT. As a direct consequence many converters connected together on a same load perturb each other because of the output voltage variations induced by fluctuations on the HVDC bus essentially due to a not insignificant bus impedance. In this paper we show that it is possible to include an internal computed variable in charge to compensate local and external variations to take into account the environment variables.

Switched-capacitor isolated LED driver

DOEpatents

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

Synchronous Controlled Switching by VCB with Electromagnetic Operation Mechanism

NASA Astrophysics Data System (ADS)

Horinouchi, Katsuhiko; Tsukima, Mitsuru; Tohya, Nobumoto; Inoue, Ryuuichi; Sasao, Hiroyuki

Synchronously controlled switching to suppress transient overvoltage and overcurrent resulting from when the circuit breakers on medium voltage systems are closed is described. Firstly, by simulation it is found that if the closing time is synchronously controlled so that the contacts of the circuit breaker close completely at the instant when the voltage across contacts of the breaker at each of the three individual phases are zero, the resulting overvoltage and overcurrent is significantly suppressed when compared to conventional three phase simultaneous closing. Next, an algorithm for determining the closing timing based on a forecasted voltage zero waveform, obtained from voltage sampling data, is presented. Finally, a synchronous closing experiment of voltage 22kV utilizing a controller to implement the algorithm and a VCB with an electromagnetic operation mechanism is presented. The VCB was successfully closed at the zero point within a tolerance range of 200 microseconds.

Cascaded Converters for Integration and Management of Grid Level Energy Storage Systems

NASA Astrophysics Data System (ADS)

Alaas, Zuhair

This research work proposes two cascaded multilevel inverter structures for BESS. The gating and switching control of switching devices in both inverter typologies are done by using a phase-shifted PWM scheme. The first proposed isolated multilevel inverter is made up of three-phase six-switch inverter blocks with a reduced number of power components compared with traditional isolated CHB. The suggested isolated converter has only one battery string for three-phase system that can be used for high voltage and high power applications such as grid connected BESS and alternative energy systems. The isolated inverter enables dq frame based simple control and eliminates the issues of single-phase pulsating power, which can cause detrimental impacts on certain dc sources. Simulation studies have been carried out to compare the proposed isolated multi-level inverter with an H-bridge cascaded transformer inverter. The simulation results verified the performance of the isolated inverter. The second proposed topology is a Hierarchal Cascaded Multilevel Converter (HCMC) with phase to phase SOC balancing capability which also for high voltage and high power battery energy storage systems. The HCMC has a hybrid structure of half-bridge converters and H-bridge inverters and the voltage can be hierarchically cascaded to reach the desired value at the half-bridge and the H-bridge levels. The uniform SOC battery management is achieved by controlling the half-bridge converters that are connected to individual battery modules/cells. Simulation studies and experimental results have been carried on a large scale battery system under different operating conditions to verify the effectiveness of the proposed inverters. Moreover, this dissertation presents a new three-phase SOC equalizing circuit, called six-switch energy-level balancing circuit (SSBC), which can be used to realize uniform SOC operation for full utilization of the battery capacity in proposed HCMC or any CMI inverter while keeping balanced three-phase operation. A sinusoidal PWM modulation technique is used to control power transferring between phases. Simulation results have been carried out to verify the performance of the proposed SSBC circuit of uniform three-phase SOC balancing.

The 77 K operation of a multi-resonant power converter

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

The liquid-nitrogen temperature (77 K) operation of a 55 W, 200 kHz, 48/28 V zero-voltage switching multi-resonant dc/dc converter designed with commercially available components is reported. Upon dipping the complete converter (power and control circuits) into liquid-nitrogen, the converter performance improved as compared to the room-temperature operation. The switching frequency, resonant frequency, and the characteristic impedance did not change significantly. Accordingly, the zero-voltage switching was maintained from no-load to full-load for the specified line variations. Cryoelectronics can provide high density power converters, especially for high power applications.

Inverter Output Filter Effect on PWM Motor Drives of a Flywheel Energy Storage System

NASA Technical Reports Server (NTRS)

Santiago, Walter

2004-01-01

NASA Glenn Research Center (GRC) has been involved in the research and development of high speed flywheel systems for small satellite energy storage and attitude control applications. One research and development area has been the minimization of the switching noise produced by the pulsed width modulated (PWM) inverter that drives the flywheel permanent magnet motor/generator (PM M/G). This noise can interfere with the flywheel M/G hardware and the system avionics hampering the full speed performance of the flywheel system. One way to attenuate the inverter switching noise is by placing an AC filter at the three phase output terminals of the inverter with the filter neutral point connected to the DC link (DC bus) midpoint capacitors. The main benefit of using an AC filter in this fashion is the significant reduction of the inverter s high dv/dt switching and its harmonics components. Additionally, common mode (CM) and differential mode (DM) voltages caused by the inverter s high dv/dt switching are also reduced. Several topologies of AC filters have been implemented and compared. One AC filter topology consists of a two-stage R-L-C low pass filter. The other topology consists of the same two-stage R-L-C low pass filter with a series connected trap filter (an inductor and capacitor connected in parallel). This paper presents the analysis, design and experimental results of these AC filter topologies and the comparison between the no filter case and conventional AC filter.

Bi-Frequency Modulated Quasi-Resonant Converters: Theory and Applications

NASA Astrophysics Data System (ADS)

Zhang, Yuefeng

1995-01-01

To avoid the variable frequency operation of quasi -resonant converters, many soft-switching PWM converters have been proposed, all of them require an auxiliary switch, which will increase the cost and complexity of the power supply system. In this thesis, a new kind of technique for quasi -resonant converters has been proposed, which is called the bi-frequency modulation technique. By operating the quasi-resonant converters at two switching frequencies, this technique enables quasi-resonant converters to achieve the soft-switching, at fixed switching frequencies, without an auxiliary switch. The steady-state analysis of four commonly used quasi-resonant converters, namely, ZVS buck, ZCS buck, ZVS boost, and ZCS boost converter has been presented. Using the concepts of equivalent sources, equivalent sinks, and resonant tank, the large signal models of these four quasi -resonant converters were developed. Based on these models, the steady-state control characteristics of BFM ZVS buck, BFM ZCS buck, BFM ZVS boost, and BFM ZCS boost converter have been derived. The functional block and design consideration of the bi-frequency controller were presented, and one of the implementations of the bi-frequency controller was given. A complete design example has been presented. Both computer simulations and experimental results have verified that the bi-frequency modulated quasi-resonant converters can achieve soft-switching, at fixed switching frequencies, without an auxiliary switch. One of the application of bi-frequency modulation technique is for EMI reduction. The basic principle of using BFM technique for EMI reduction was introduced. Based on the spectral analysis, the EMI performances of the PWM, variable-frequency, and bi-frequency modulated control signals was evaluated, and the BFM control signals show the lowest EMI emission. The bi-frequency modulated technique has also been applied to the power factor correction. A BFM zero -current switching boost converter has been designed for the power factor correction, and the simulation results show that the power factor has been improved.

Quench dynamics in superconducting nanojunctions: Metastability and dynamical Yang-Lee zeros

NASA Astrophysics Data System (ADS)

Souto, R. Seoane; Martín-Rodero, A.; Yeyati, A. Levy

2017-10-01

We study the charge transfer dynamics following the formation of a phase or voltage biased superconducting nanojunction using a full counting statistics analysis. We demonstrate that the evolution of the zeros of the generating function allows one to identify the population of different many body states much in the same way as the accumulation of Yang-Lee zeros of the partition function in equilibrium statistical mechanics is connected to phase transitions. We give an exact expression connecting the dynamical zeros to the charge transfer cumulants and discuss when an approximation based on "dominant" zeros is valid. We show that, for generic values of the parameters, the system gets trapped into a metastable state characterized by a nonequilibrium population of the many body states which is dependent on the initial conditions. We study in particular the effect of the switching rates in the dynamics showing that, in contrast to intuition, the deviation from thermal equilibrium increases for the slower rates. In the voltage biased case the steady state is reached independent of the initial conditions. Our method allows us to obtain accurate results for the steady state current and noise in quantitative agreement with steady state methods developed to describe the multiple Andreev reflections regime. Finally, we discuss the system dynamics after a sudden voltage drop showing the possibility of tuning the many body states population by an appropriate choice of the initial voltage, providing a feasible experimental way to access the quench dynamics and control the state of the system.

Enhancement of macroscopic quantum tunneling in the higher-order phase switches of Bi2212 intrinsic Josephson junctions

NASA Astrophysics Data System (ADS)

Kitano, Haruhisa; Yamaguchi, Ayami; Takahashi, Yusaku; Umegai, Shunpei; Watabe, Yuji; Ohnuma, Haruka; Hosaka, Kazutaka; Kakehi, Daiki

2018-03-01

The macroscopic quantum tunneling (MQT) in the current-biased intrinsic Josephson junctions (IJJs) of high-T c cuprates has attracted much attention for decades. Although the MQT for the phase switches from the zero to the first voltage state (1st SW) in the multiple-branched I-V curves is well explained by the conventional theory, the occurrence of MQT for the higher order switches such as the switch from the 1st to 2nd voltage state (2nd SW) has been still debated. Here, we present an experimental study on the phase switches of small IJJs fabricated from underdoped Bi2Sr2(Ca,Y)Cu2Oy. We observed the single photon transition between quantized energy levels in the 3rd phase switches at 59.15 GHz and 2 K. The comparison with the previous studies on the nearly optimal-doped Bi2Sr2CaCu2Oy clearly suggests a possibility that the MQT rate for the higher-order phase switches is commonly enhanced by the effective suppression of the energy barrier for the higher-order phase escape due to the phase-running state after the 1st SW, in spite of the large difference in a critical current density and T c.

Induction motor speed control using varied duty cycle terminal voltage via PI controller

NASA Astrophysics Data System (ADS)

Azwin, A.; Ahmed, S.

2018-03-01

This paper deals with the PI speed controller for the three-phase induction motor using PWM technique. The PWM generated signal is utilized for voltage source inverter with an optimal duty cycle on a simplified induction motor model. A control algorithm for generating PWM control signal is developed. Obtained results shows that the steady state error and overshoot of the developed system is in the limit under different speed and load condition. The robustness of the control performance would be potential for induction motor performance improvement.

A 10 kW dc-dc converter using IGBTs with active snubbers. [Insulated Gate Bipolar Transistor

NASA Technical Reports Server (NTRS)

Masserant, Brian J.; Shriver, Jeffrey L.; Stuart, Thomas A.

1993-01-01

This full bridge dc-dc converter employs zero voltage switching (ZVS) on one leg and zero current switching (ZCS) on the other. This technique produces exceptionally low IGBT switching losses through the use of an active snubber that recycles energy back to the source. Experimental results are presented for a 10 kW, 20 kHz converter.

Bidirectional buck boost converter

DOEpatents

Esser, Albert Andreas Maria

1998-03-31

A bidirectional buck boost converter and method of operating the same allows regulation of power flow between first and second voltage sources in which the voltage level at each source is subject to change and power flow is independent of relative voltage levels. In one embodiment, the converter is designed for hard switching while another embodiment implements soft switching of the switching devices. In both embodiments, first and second switching devices are serially coupled between a relatively positive terminal and a relatively negative terminal of a first voltage source with third and fourth switching devices serially coupled between a relatively positive terminal and a relatively negative terminal of a second voltage source. A free-wheeling diode is coupled, respectively, in parallel opposition with respective ones of the switching devices. An inductor is coupled between a junction of the first and second switching devices and a junction of the third and fourth switching devices. Gating pulses supplied by a gating circuit selectively enable operation of the switching devices for transferring power between the voltage sources. In the second embodiment, each switching device is shunted by a capacitor and the switching devices are operated when voltage across the device is substantially zero.

Bidirectional buck boost converter

DOEpatents

Esser, A.A.M.

1998-03-31

A bidirectional buck boost converter and method of operating the same allows regulation of power flow between first and second voltage sources in which the voltage level at each source is subject to change and power flow is independent of relative voltage levels. In one embodiment, the converter is designed for hard switching while another embodiment implements soft switching of the switching devices. In both embodiments, first and second switching devices are serially coupled between a relatively positive terminal and a relatively negative terminal of a first voltage source with third and fourth switching devices serially coupled between a relatively positive terminal and a relatively negative terminal of a second voltage source. A free-wheeling diode is coupled, respectively, in parallel opposition with respective ones of the switching devices. An inductor is coupled between a junction of the first and second switching devices and a junction of the third and fourth switching devices. Gating pulses supplied by a gating circuit selectively enable operation of the switching devices for transferring power between the voltage sources. In the second embodiment, each switching device is shunted by a capacitor and the switching devices are operated when voltage across the device is substantially zero. 20 figs.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, Emanuel M.

1987-01-01

A high-power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, E.M.

1984-06-05

A high power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime.

Modularized multilevel and z-source power converter as renewable energy interface for vehicle and grid-connected applications

NASA Astrophysics Data System (ADS)

Cao, Dong

Due the energy crisis and increased oil price, renewable energy sources such as photovoltaic panel, wind turbine, or thermoelectric generation module, are used more and more widely for vehicle and grid-connected applications. However, the output of these renewable energy sources varies according to different solar radiation, wind speed, or temperature difference, a power converter interface is required for the vehicle or grid-connected applications. Thermoelectric generation (TEG) module as a renewable energy source for automotive industry is becoming very popular recently. Because of the inherent characteristics of TEG modules, a low input voltage, high input current and high voltage gain dc-dc converters are needed for the automotive load. Traditional high voltage gain dc-dc converters are not suitable for automotive application in terms of size and high temperature operation. Switched-capacitor dc-dc converters have to be used for this application. However, high voltage spike and EMI problems exist in traditional switched-capacitor dc-dc converters. Huge capacitor banks have to be utilized to reduce the voltage ripple and achieve high efficiency. A series of zero current switching (ZCS) or zero voltage switching switched-capacitor dc-dc converters have been proposed to overcome the aforementioned problems of the traditional switched-capacitor dc-dc converters. By using the proposed soft-switching strategy, high voltage spike is reduced, high EMI noise is restricted, and the huge capacitor bank is eliminated. High efficiency, high power density and high temperature switched-capacitor dc-dc converters could be made for the TEG interface in vehicle applications. Several prototypes have been made to validate the proposed circuit and confirm the circuit operation. In order to apply PV panel for grid-connected application, a low cost dc-ac inverter interface is required. From the use of transformer and safety concern, two different solutions can be implemented, non-isolated or isolated PV inverter. For the non-isolated transformer-less solution, a semi-Z-source inverter for single phase photovoltaic systems has been proposed. The proposed semi-Z-source inverter utilizes only two switching devices with doubly grounded feature. The total cost have been reduced, the safety and EMI issues caused by the high frequency ground current are solved. For the transformer isolated solution, a boost half-bridge dc-ac micro-inverter has been proposed. The proposed boost half-bridge dc-dc converter utilizes only two switching devices with zero voltage switching features which is able to reduce the total system cost and power loss.

Voltage equaliser for Li-Fe battery

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Chuang, Ping-Hao

2013-10-01

In this article, a voltage equaliser is proposed for a battery string with four Li-Fe batteries. The proposed voltage equaliser is developed from a flyback converter, which comprises a transformer, a power electronic switch and a resonant clamped circuit. The transformer contains a primary winding and four secondary windings with the same number of turns connected to each battery. The resonant clamped circuit is for recycling the energy of leakage inductance of the transformer and for performing zero-voltage switching (ZVS) of the power electronic switch. When the power electronic switch is switched on, the energy is stored in the transformer; and when the power electronic switch is switched off, the energy stored in the transformer will automatically charge the battery whose voltage is the lowest. In this way, the voltage of individual batteries in the battery string is balanced. The salient features of the proposed voltage equaliser are that only one switch is used, the energy stored in the leakage inductance of the transformer can be recycled and ZVS is obtained. A prototype is developed and tested to verify the performance of the proposed voltage equaliser. The experimental results show that the proposed voltage equaliser achieves the expected performance.

Voltage-Controlled Switching and Thermal Effects in VO2 Nano-Gap Junctions

DTIC Science & Technology

2014-06-09

Voltage-controlled switching and thermal effects in VO2 nano-gap junctions Arash Joushaghani,1 Junho Jeong,1 Suzanne Paradis,2 David Alain,2 J...2014) Voltage-controlled switching in lateral VO2 nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of...indicate that the VO2 phase transition was likely initiated electroni- cally, which was sometimes followed by a secondary thermally-induced transition

Low Cost Embedded Controlled Full Bridge LC Parallel Resonant Converter

NASA Astrophysics Data System (ADS)

Chandrasekhar, P.; Reddy, S.

2009-01-01

In this paper the converter requirements for an optimum control of an electrolyser linked with a DC bus are analyzed and discussed. An electrolyser is a part of renewable energy system which generates hydrogen from water electrolysis. The hydrogen generating device is part of a complex system constituted by a supplying photovoltaic plant, the grid and a fuel cell battery. The characterization in several operative conditions of an actual industrial electrolyser is carried out in order to design and optimize the DC/DC converter. A dedicated zero voltage switching DC/DC converter is presented and simulated inside the context of the distributed energy production and storage system. The proposed supplying converter gives a stable output voltage and high circuit efficiency in all the proposed simulated scenarios. The adopted DC/DC converter is realized in a full-bridge topology technique in order to achieve zero voltage switching for the power switches and to regulate the output voltage. This converter has advantages like high power density, low EMI and reduced switching stresses. The simulation results are verified with the experimental results.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, E.R.C. da; Filho, B.J.C.

This paper presents a PWM current clamping circuit for improving a series resonant DC link converter. This circuit is capable of reducing current peaks to about 1.2--1.4 times the DC bias current. When desired, resonant transition creates notches in the dc link current, allowing the converter`s switches to synchronize with external PWM strategy. A regulated DC current source may be obtained--by using a conventional rectifier source--to feed a DC load or a current source inverter. Phase plane approach makes ease the understanding the operation, control and design procedure of the circuit. Another topology is derived and its features compared tomore » the first circuit. Simulation results for the simplified circuit and for a three-phase induction motor driven by such inverter will be presented. Moreover, the principle is corroborated by experimental results.« less

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

NASA Technical Reports Server (NTRS)

Binkley, David M.; Verma, Nikhil; Crawford, Robert L.; Brandon, Erik; Jackson, Thomas N.

2004-01-01

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

Filtering and Control of High Speed Motor Current in a Flywheel Energy Storage System

NASA Technical Reports Server (NTRS)

Kenny, Barbara H.; Santiago, Walter

2004-01-01

The NASA Glenn Research Center has been developing technology to enable the use of high speed flywheel energy storage units in future spacecraft for the last several years. An integral part of the flywheel unit is the three phase motor/generator that is used to accelerate and decelerate the flywheel. The motor/generator voltage is supplied from a pulse width modulated (PWM) inverter operating from a fixed DC voltage supply. The motor current is regulated through a closed loop current control that commands the necessary voltage from the inverter to achieve the desired current. The current regulation loop is the innermost control loop of the overall flywheel system and, as a result, must be fast and accurate over the entire operating speed range (20,000 to 60,000 rpm) of the flywheel. The voltage applied to the motor is a high frequency PWM version of the DC bus voltage that results in the commanded fundamental value plus higher order harmonics. Most of the harmonic content is at the switching frequency and above. The higher order harmonics cause a rapid change in voltage to be applied to the motor that can result in large voltage stresses across the motor windings. In addition, the high frequency content in the motor causes sensor noise in the magnetic bearings that leads to disturbances for the bearing control. To alleviate these problems, a filter is used to present a more sinusoidal voltage to the motor/generator. However, the filter adds additional dynamics and phase lag to the motor system that can interfere with the performance of the current regulator. This paper will discuss the tuning methodology and results for the motor/generator current regulator and the impact of the filter on the control. Results at speeds up to 50,000 rpm are presented.

Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

NASA Technical Reports Server (NTRS)

Bearden, Douglas

2007-01-01

A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, E.M.

1987-02-10

A high-power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime. 10 figs.

A zero-voltage-switched three-phase interleaved buck converter

NASA Astrophysics Data System (ADS)

Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

2018-04-01

This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

CFAVC scheme for high frequency series resonant inverter-fed domestic induction heating system

NASA Astrophysics Data System (ADS)

Nagarajan, Booma; Reddy Sathi, Rama

2016-01-01

This article presents the investigations on the constant frequency asymmetric voltage cancellation control in the AC-AC resonant converter-fed domestic induction heating system. Conventional fixed frequency control techniques used in the high frequency converters lead to non-zero voltage switching operation and reduced output power. The proposed control technique produces higher output power than the conventional fixed-frequency control strategies. In this control technique, zero-voltage-switching operation is maintained during different duty cycle operation for reduction in the switching losses. Complete analysis of the induction heating power supply system with asymmetric voltage cancellation control is discussed in this article. Simulation and experimental study on constant frequency asymmetric voltage cancellation (CFAVC)-controlled full bridge series resonant inverter is performed. Time domain simulation results for the open and closed loop of the system are obtained using MATLAB simulation tool. The simulation results prove the control of voltage and power in a wide range. PID controller-based closed loop control system achieves the voltage regulation of the proposed system for the step change in load. Hardware implementation of the system under CFAVC control is done using the embedded controller. The simulation and experimental results validate the performance of the CFAVC control technique for series resonant-based induction cooking system.

Transistorized PWM inverter-induction motor drive system

NASA Technical Reports Server (NTRS)

Peak, S. C.; Plunkett, A. B.

1982-01-01

This paper describes the development of a transistorized PWM inverter-induction motor traction drive system. A vehicle performance analysis was performed to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of inverter and motor specifications. The inverter was a transistorized three-phase bridge using General Electric power Darlington transistors. The description of the design and development of this inverter is the principal object of this paper. The high-speed induction motor is a design which is optimized for use with an inverter power source. The primary feedback control is a torque angle control with voltage and torque outer loop controls. A current-controlled PWM technique is used to control the motor voltage. The drive has a constant torque output with PWM operation to base motor speed and a constant horsepower output with square wave operation to maximum speed. The drive system was dynamometer tested and the results are presented.

PWM Inverter with Voltage Boosters with Regenerating Capability Augmented by Electric Double-Layer Capacitor

NASA Astrophysics Data System (ADS)

Yamamoto, Kichiro; Imakiire, Akihiro; Iimori, Kenichi

An interior permanent magnet (IPM) motor drive system which has regenerating capability augmented by electric double-layer capacitors (EDLCs) is proposed. In the proposed system, EDLCs are arranged in series with batteries so that a lesser number of the EDLCs and batteries will be required. The proposed system has two bi-directional voltage boosters: one is for both the batteries and EDLCs to control the dc-link voltage of a PWM inverter and the other is for only the EDLCs and is used to control the energy flow from and to the EDLCs. In this paper, a strategy to control the energy flow to and from the EDLCs is explained and its effectiveness is confirmed by simulation and experimental results. Furthermore, the efficiencies of the voltage booster, inverter, PM motor, and whole system are measured for the system with the basic configuration, i.e., which consists of only one bi-directional voltage booster and PWM inverter. Then, the steady-state characteristics are determined. Finally, the efficiency of the voltage boosters in the proposed system is determined, and the advantage of the proposed PM motor drive system is discussed.

Characterization and snubbing of a bidirectional MCT in a resonant ac link converter

NASA Technical Reports Server (NTRS)

Lee, Tony; Elbuluk, Malik E.; Zinger, Donald S.

1993-01-01

The MOS-Controlled Thyristor (MCT) is emerging as a powerful switch that combines the better characteristics of existing power devices. A study of switching stresses on an MCT switch under zero voltage resonant switching is presented. The MCT is used as a bidirectional switch in an ac/ac pulse density modulated inverter for induction motor drive. Current and voltage spikes are observed and analyzed with variations in the timing of the switching. Different snubber circuit configurations are under investigation to minimize the effect of these transients. The results will be extended to study and test the MCT switching in a medium power (5 hp) induction motor drive.

Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hong-bo, E-mail: walkman67@163.com; Liu, Jin-liang

2014-04-15

In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid innermore » surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.« less

Optimal feed-forward compensation for PWM dc/dc converters with 'linear' and 'quadratic' conversion ratio

NASA Astrophysics Data System (ADS)

Calderone, Luigi; Pinola, Licia; Varoli, Vincenzo

1992-04-01

The paper describes an analytical procedure to optimize the feed-forward compensation for any PWM dc/dc converters. The aims of achieving zero dc audiosusceptibility was found to be possible for the buck, buck-boost, Cuk, and SEPIC cells; for the boost converter, however, only nonoptimal compensation is feasible. Rules for the design of PWM controllers and procedures for the evaluation of the hardware-introduced errors are discussed. A PWM controller implementing the optimal feed-forward compensation for buck-boost, Cuk, and SEPIC cells is described and fully experimentally characterized.

Metal vapor arc switch electromagnetic accelerator technology

NASA Technical Reports Server (NTRS)

Mongeau, P. P.

1984-01-01

A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

Class E/F switching power amplifiers

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Aoki, Ichiro (Inventor); Rutledge, David B. (Inventor); Kee, Scott David (Inventor)

2004-01-01

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Switching Characteristics of Ferroelectric Transistor Inverters

NASA Technical Reports Server (NTRS)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

A soft-switching coupled inductor bidirectional DC-DC converter with high-conversion ratio

NASA Astrophysics Data System (ADS)

Chao, Kuei-Hsiang; Jheng, Yi-Cing

2018-01-01

A soft-switching bidirectional DC-DC converter is presented herein as a way to improve the conversion efficiency of a photovoltaic (PV) system. Adoption of coupled inductors enables the presented converter not only to provide a high-conversion ratio but also to suppress the transient surge voltage via the release of the energy stored in leakage flux of the coupled inductors, and the cost can kept down consequently. A combined use of a switching mechanism and an auxiliary resonant branch enables the converter to successfully perform zero-voltage switching operations on the main switches and improves the efficiency accordingly. It was testified by experiments that our proposed converter works relatively efficiently in full-load working range. Additionally, the framework of the converter intended for testifying has high-conversion ratio. The results of a test, where a generating system using PV module array coupled with batteries as energy storage device was used as the low-voltage input side, and DC link was used as high-voltage side, demonstrated our proposed converter framework with high-conversion ratio on both high-voltage and low-voltage sides.

Permanent Magnet Synchronous Motor Driven by PWM Inverter with Voltage Booster with Regenerating Capability Augmented by Double-Layer Capacitor

NASA Astrophysics Data System (ADS)

Yamamoto, Kichiro; Shinohara, Katsuji; Furukawa, Shinya

An interior permanent magnet (IPM) motor drive system which has regenerating capability augmented by double-layer capacitors is proposed. The motor is driven by a PWM inverter with voltage booster. The voltage booster is used to control the dc link voltage in high speed region to improve the system efficiency. Furthermore, the double-layer capacitor as a storage element is combined with the PWM inverter with voltage booster to gain the efficiency for the regenerating operation. In this system, normally, the regenerative power does not return to a battery directly but is stored in the double-layer capacitors for the next motoring action to suppress the excessive regenerative current to battery, and the regenerative power returns to the battery when the regenerative energy is larger than a certain value. The charging current to the battery is controlled to a constant value to extend the life-time of the battery. The transient and steady state characteristics of the system for 1.5kW IPM motor are investigated by both simulation and experiment. Finally, the effectiveness of the system is demonstrated by the simulated and experimental results.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

New model of inverting substation for DC traction with regenerative braking system

NASA Astrophysics Data System (ADS)

Omar, Abdul Malek Saidina; Samat, Ahmad Asri Abd; Isa, Siti Sarah Mat; Shamsuddin, Sarah Addyani; Jamaludin, Nur Fadhilah; Khyasudeen, Muhammad Farris

2017-08-01

This paper presents a power electronic devices application focus on modeling, analysis, and control of switching power converter in the inverting DC substation with regenerative braking system which is used to recycle the surplus regenerative power by feed it back to the main AC grid. The main objective of this research is to improve the switching power electronic converter of the railway inverting substation and optimize the maximum kinetic energy recovery together with minimum power losses from the railway braking system. Assess performance including efficiency and robustness will be evaluated in order to get the best solution for the design configuration. Research methodology included mathematical calculation, simulation, and detail analysis on modeling of switching power converter on inverting substation. The design stage separates to four main areas include rectification mode, regenerative mode, control inverter mode and filtering mode. The simulation result has shown that the regenerative inverter has a capability to accept a maximum recovery power on the regeneration mode. Total energy recovery has increase and power losses have decreases because inverter abilities to transfer the surplus energy back to the main AC supply. An Inverter controller with PWM Generator and PI Voltage Regulator has been designed to control voltage magnitude and frequency of the DC traction system.

Simulation comparison of proportional integral derivative and fuzzy logic in controlling AC-DC buck boost converter

NASA Astrophysics Data System (ADS)

Faisal, A.; Hasan, S.; Suherman

2018-03-01

AC-DC converter is widely used in the commercial industry even for daily purposes. The AC-DC converter is used to convert AC voltage into DC. In order to obtain the desired output voltage, the converter usually has a controllable regulator. This paper discusses buck boost regulator with a power MOSFET as switching component which is adjusted based on the duty cycle of pulse width modulation (PWM). The main problems of the buck boost converter at start up are the high overshoot, the long peak time and rise time. This paper compares the effectiveness of two control techniques: proportional integral derivative (PID) and fuzzy logic control in controlling the buck boost converter through simulations. The results show that the PID is more sensitive to voltage change than fuzzy logic. However, PID generates higher overshoot, long peak time and rise time. On the other hand, fuzzy logic generates no overshoot and shorter rise time.

Design and analysis of optimised class E power amplifier using shunt capacitance in the output structure

NASA Astrophysics Data System (ADS)

Hayati, Mohsen; Roshani, Sobhan; Zirak, Ali Reza

2017-05-01

In this paper, a class E power amplifier (PA) with operating frequency of 1 MHz is presented. MOSFET non-linear drain-to-source parasitic capacitance, linear external capacitance at drain-to-source port and linear shunt capacitance in the output structure are considered in design theory. One degree of freedom is added to the design of class E PA, by assuming the shunt capacitance in the output structure in the analysis. With this added design degree of freedom it is possible to achieve desired values for several parameters, such as output voltage, load resistance and operating frequency, while both zero voltage and zero derivative switching (ZVS and ZDS) conditions are satisfied. In the conventional class E PA, high value of peak switch voltage results in limitations for the design of amplifier, while in the presented structure desired specifications could be achieved with the safe margin of peak switch voltage. The results show that higher operating frequency and output voltage can also be achieved, compared to the conventional structure. PSpice software is used in order to simulate the designed circuit. The presented class E PA is designed, fabricated and measured. The measured results are in good agreement with simulation and theory results.

Electrical control of 2D magnetism in bilayer CrI 3

DOE PAGES

Huang, Bevin; Clark, Genevieve; Klein, Dahlia R.; ...

2018-04-23

Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction. Owing to their unique magnetic properties, the recently reported two-dimensional magnets provide a new system for studying these features. For instance, a bilayer of chromium triiodide (CrI 3) behaves as a layered antiferromagnet with a magnetic field-driven metamagneticmore » transition. Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Here, our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.« less

Electrical control of 2D magnetism in bilayer CrI 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bevin; Clark, Genevieve; Klein, Dahlia R.

Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction. Owing to their unique magnetic properties, the recently reported two-dimensional magnets provide a new system for studying these features. For instance, a bilayer of chromium triiodide (CrI 3) behaves as a layered antiferromagnet with a magnetic field-driven metamagneticmore » transition. Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Here, our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.« less

Systems and methods for initializing a charging system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perisic, Milun; Ransonm, Ray M.; Kojouke, Lateef A.

2017-09-26

Systems and methods are provided for charging a battery. The system, for example, includes, but is not limited to a first interface configured to receive a voltage from an AC voltage source, a matrix conversion module comprising a plurality of switches electrically connected to the first interface and configured to provide a charging voltage to the battery, and a controller communicatively connected to the matrix conversion module, wherein the controller is configured to: determine a voltage of the battery, determine an angle of the AC voltage source to initiate charging of the battery based upon the voltage of the battery,more » and control the plurality of switches to provide the charging voltage to the battery between the determined angle of the AC voltage source and a subsequent zero-crossing of the AC voltage source.« less

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

Magnetic field dependence of spin torque switching in nanoscale magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Yang, Liu; Rowlands, Graham; Katine, Jordan; Langer, Juergen; Krivorotov, Ilya

2012-02-01

Magnetic random access memory based on spin transfer torque effect in nanoscale magnetic tunnel junctions (STT-RAM) is emerging as a promising candidate for embedded and stand-alone computer memory. An important performance parameter of STT-RAM is stability of its free magnetic layer against thermal fluctuations. Measurements of the free layer switching probability as a function of sub-critical voltage at zero effective magnetic field (read disturb rate or RDR measurements) have been proposed as a method for quantitative evaluation of the free layer thermal stability at zero voltage. In this presentation, we report RDR measurement as a function of external magnetic field, which provide a test of the RDR method self-consistency and reliability.

A Method of Maximum Power Control in Single-phase Utility Interactive Photovoltaic Generation System by using PWM Current Source Inverter

NASA Astrophysics Data System (ADS)

Neba, Yasuhiko

This paper deals with a maximum power point tracking (MPPT) control of the photovoltaic generation with the single-phase utility interactive inverter. The photovoltaic arrays are connected by employing the PWM current source inverter to the utility. The use of the pulsating dc current and voltage allows the maximum power point to be searched. The inverter can regulate the array voltage and keep the arrays to the maximum power. This paper gives the control method and the experimental results.

A new topology and control method for electromagnetic transmitter power supplies

NASA Astrophysics Data System (ADS)

Zhang, Yiming; Zhang, Jialin; Yuan, Dakang

2017-04-01

As essential equipment for electromagnetic exploration, electromagnetic transmitter reverse the steady power supply with desired frequency and transmit the power through grounding electrodes. To obtain effective geophysical data during deep exploration, the transmitter needs to be high-voltage, high-current, with high-accuracy output, and yet compact and light. The researches on the power supply technologies for high-voltage high-power electromagnetic transmitter is of significant importance to the deep geophysical explorations. Therefore, the performance of electromagnetic transmitter is mainly subject to the following two aspects: the performance of emission current and voltage, and the power density. These requirements bring technical difficulties to the development of power supplies. Conventionally, high-frequency switching power supplies are applied in the design of a high-power transmitter power supply. However, the structure of the topology is complicate, which may reduce the controllability of the output voltage and the reliability of the system. Without power factor control, the power factor of the structure is relatively low. Moreover high switching frequency causes high loss. With the development of the PWM (pulse width modulation) technique, its merits of simple structure, low loss, convenient control and unit power factor have made it popular in electrical energy feedback, active filter, and power factor compensation. Studies have shown that using PWM converters and space vector modulation have become the trend in designing transmitter power supply. However, the earth load exhibits different impedances at different frequencies. Thus ensuing high-accuracy and a stable output from a transmitter power supply in harsh environment has become a key topic in the design of geophysical exploration instruments. Based on SVPWM technology, an electromagnetic transmitter power supply has been designed and its control strategy has been studied. The transmitting system is composed of power supply, SVPWM converter, and power inverter units. The functions of the units are as follows: (1) power supply: a generator providing power with three phase; (2) SVPWM converter: convert AC to DC output; (3) power inverter unit: the inverter is used to convert DC to AC output whose frequency, amplitude and waveform are variable. In the SVPWM technique, the active current and the reactive current are controlled separately, and each variable is analyzed individually, thus the power factor of the system is improved. Through controlling the PWM converter at the generation side, we can get any power factor. Usually the power factor of the generation side is set to 1. Finally, simulation and experimental results validate both the correctness of the established model and the effectiveness of the control method. We can acquire unity power factor for the input and steady current for the output. They also demonstrated that the electromagnetic transmitter power supply designed in this study can meet the practical needs of field geological exploration. We can improve the utilization of the transmitter system.

Adaptive super-twisting sliding mode control for a three-phase single-stage grid-connected differential boost inverter based photovoltaic system.

PubMed

Pati, Akshaya K; Sahoo, N C

2017-07-01

This paper presents an adaptive super-twisting sliding mode control (STC) along with double-loop control for voltage tracking performance of three-phase differential boost inverter and DC-link capacitor voltage regulation in grid-connected PV system. The effectiveness of the proposed control strategies are demonstrated under realistic scenarios such as variations in solar insolation, load power demand, grid voltage, and transition from grid-connected to standalone mode etc. Additional supplementary power quality control functions such as harmonic compensation, and reactive power management are also investigated with the proposed control strategy. The results are compared with conventional proportional-integral controller, and PWM sliding mode controller. The system performance is evaluated in simulation and in real-time. Copyright © 2017 ISA. Published by Elsevier Ltd. All rights reserved.

A study of DC-DC converters with MCT's for arcjet power supplies

NASA Technical Reports Server (NTRS)

Stuart, Thomas A.

1994-01-01

Many arcjet DC power supplies use PWM full bridge converters with large arrays of parallel FET's. This report investigates an alternative supply using a variable frequency series resonant converter with small arrays of parallel MCT's (metal oxide semiconductor controlled thyristors). The reasons for this approach are to: increase reliability by reducing the number of switching devices; and decrease the surface mounting area of the switching arrays. The variable frequency series resonant approach is used because the relatively slow switching speed of the MCT precludes the use of PWM. The 10 kW converter operated satisfactorily with an efficiency of over 91 percent. Test results indicate this efficiency could be increased further by additional optimization of the series resonant inductor.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, W.N.; Thomas, R.J.

1999-08-31

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast. 4 figs.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, William Newell; Thomas, Robert James

1999-01-01

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

PubMed

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dual-bridge LLC-SRC with extended voltage range for deeply depleted PEV battery charging

NASA Astrophysics Data System (ADS)

Shahzad, M. Imran; Iqbal, Shahid; Taib, Soib

2017-11-01

This paper proposes a dual-bridge LLC series resonant converter with hybrid-rectifier for achieving extended charging voltage range of 50-420 V for on-board battery charger of plug-in electric vehicle for normal and deeply depleted battery charging. Depending upon the configuration of primary switching network and secondary rectifier, the proposed topology has three operating modes as half-bridge with bridge rectifier (HBBR), full-bridge with bridge rectifier (FBBR) and full-bridge with voltage doubler (FBVD). HBBR, FBBR and FBVD operating modes of converter achieve 50-125, 125-250 and 250-420 V voltage ranges, respectively. For voltage above 62 V, the converter operates below resonance frequency zero voltage switching region with narrow switching frequency range for soft commutation of secondary diodes and low turn-off current of MOSFETs to reduce switching losses. The proposed converter is simulated using MATLAB Simulink and a 1.5 kW laboratory prototype is also built to validate the operation of proposed topology. Simulation and experimental results show that the converter meets all the charging requirements for deeply depleted to fully charged battery using constant current-constant voltage charging method with fixed 400 V DC input and achieves 96.22% peak efficiency.

Switching dynamics of TaOx-based threshold switching devices

NASA Astrophysics Data System (ADS)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

Driver Circuit For High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Vehicle electrical system state controller

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissontz, Jay E.

A motor vehicle electrical power distribution system includes a plurality of distribution sub-systems, an electrical power storage sub-system and a plurality of switching devices for selective connection of elements of and loads on the power distribution system to the electrical power storage sub-system. A state transition initiator provides inputs to control system operation of switching devices to change the states of the power distribution system. The state transition initiator has a plurality of positions selection of which can initiate a state transition. The state transition initiator can emulate a four position rotary ignition switch. Fail safe power cutoff switches providemore » high voltage switching device protection.« less

Electrical studies of Ge4Sb1Te5 devices for memory applications

NASA Astrophysics Data System (ADS)

Sangeetha, B. G.; Shylashree, N.

2018-05-01

In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

An Approach to Average Modeling and Simulation of Switch-Mode Systems

ERIC Educational Resources Information Center

Abramovitz, A.

2011-01-01

This paper suggests a pedagogical approach to teaching the subject of average modeling of PWM switch-mode power electronics systems through simulation by general-purpose electronic circuit simulators. The paper discusses the derivation of PSPICE/ORCAD-compatible average models of the switch-mode power stages, their software implementation, and…

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

2009-01-01

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

Bidirectional DC/DC Converter

NASA Astrophysics Data System (ADS)

Pedersen, F.

2008-09-01

The presented bidirectional DC/DC converter design concept is a further development of an already existing converter used for low battery voltage operation.For low battery voltage operation a high efficient low parts count DC/DC converter was developed, and used in a satellite for the battery charge and battery discharge function.The converter consists in a bidirectional, non regulating DC/DC converter connected to a discharge regulating Buck converter and a charge regulating Buck converter.The Bidirectional non regulating DC/DC converter performs with relatively high efficiency even at relatively high currents, which here means up to 35Amps.This performance was obtained through the use of power MOSFET's with on- resistances of only a few mille Ohms connected to a special transformer allowing paralleling several transistor stages on the low voltage side of the transformer. The design is patent protected. Synchronous rectification leads to high efficiency at the low battery voltages considered, which was in the range 2,7- 4,3 Volt DC.The converter performs with low switching losses as zero voltage zero current switching is implemented in all switching positions of the converter.Now, the drive power needed, to switch a relatively large number of low Ohm , hence high drive capacitance, power MOSFET's using conventional drive techniques would limit the overall conversion efficiency.Therefore a resonant drive consuming considerable less power than a conventional drive circuit was implemented in the converter.To the originally built and patent protected bidirectional non regulating DC/DC converter, is added the functionality of regulation.Hereby the need for additional converter stages in form of a Charge Buck regulator and a Discharge Buck regulator is eliminated.The bidirectional DC/DC converter can be used in connection with batteries, motors, etc, where the bidirectional feature, simple design and high performance may be useful.

Tunneling Nanoelectromechanical Switches Based on Compressible Molecular Thin Films.

PubMed

Niroui, Farnaz; Wang, Annie I; Sletten, Ellen M; Song, Yi; Kong, Jing; Yablonovitch, Eli; Swager, Timothy M; Lang, Jeffrey H; Bulović, Vladimir

2015-08-25

Abrupt switching behavior and near-zero leakage current of nanoelectromechanical (NEM) switches are advantageous properties through which NEMs can outperform conventional semiconductor electrical switches. To date, however, typical NEMs structures require high actuation voltages and can prematurely fail through permanent adhesion (defined as stiction) of device components. To overcome these challenges, in the present work we propose a NEM switch, termed a "squitch," which is designed to electromechanically modulate the tunneling current through a nanometer-scale gap defined by an organic molecular film sandwiched between two electrodes. When voltage is applied across the electrodes, the generated electrostatic force compresses the sandwiched molecular layer, thereby reducing the tunneling gap and causing an exponential increase in the current through the device. The presence of the molecular layer avoids direct contact of the electrodes during the switching process. Furthermore, as the layer is compressed, the increasing surface adhesion forces are balanced by the elastic restoring force of the deformed molecules which can promote zero net stiction and recoverable switching. Through numerical analysis, we demonstrate the potential of optimizing squitch design to enable large on-off ratios beyond 6 orders of magnitude with operation in the sub-1 V regime and with nanoseconds switching times. Our preliminary experimental results based on metal-molecule-graphene devices suggest the feasibility of the proposed tunneling switching mechanism. With optimization of device design and material engineering, squitches can give rise to a broad range of low-power electronic applications.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

NASA Astrophysics Data System (ADS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-04-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Single-Stage Step up/down Driver for Permanent-Magnet Synchronous Machines

NASA Astrophysics Data System (ADS)

Chen, T. R.; Juan, Y. L.; Huang, C. Y.; Kuo, C. T.

2017-11-01

The two-stage circuit composed of a step up/down dc converter and a three-phase voltage source inverter is usually adopted as the electric vehicle’s motor driver. The conventional topology is more complicated. Additional power loss resulted from twice power conversion would also cause lower efficiency. A single-stage step up/down Permanent-Magnet Synchronous Motor driver for Brushless DC (BLDC) Motor is proposed in this study. The number components and circuit complexity are reduced. The low frequency six-step square-wave control is used to reduce the switching losses. In the proposed topology, only one active switch is gated with a high frequency PWM signal for adjusting the rotation speed. The rotor position signals are fed back to calculate the motor speed for digital close-loop control in a MCU. A 600W prototype circuit is constructed to drive a BLDC motor with rated speed 3000 rpm, and can control the speed of six sections.

On the transient dynamics of piezoelectric-based, state-switched systems

NASA Astrophysics Data System (ADS)

Lopp, Garrett K.; Kelley, Christopher R.; Kauffman, Jeffrey L.

2018-01-01

This letter reports on the induced mechanical transients for piezoelectric-based, state-switching approaches utilizing both experimental tests and a numerical model that more accurately captures the dynamics associated with a switch between stiffness states. Currently, switching models instantaneously dissipate the stored piezoelectric voltage, resulting in a discrete change in effective stiffness states and a discontinuity in the system dynamics during the switching event. The proposed model allows for a rapid but continuous voltage dissipation and the corresponding variation between stiffness states, as one sees in physical implementations. This rapid variation in system stiffness when switching at a point of non-zero strain leads to high-frequency, large-amplitude transients in the system acceleration response. Utilizing a fundamental piezoelectric bimorph, a comparison between the numerical and experimental results reveals that these mechanical transients are much stronger than originally anticipated and masked by measurement hardware limitations, thus highlighting the significance of an appropriate system model governing the switch dynamics. Such a model enables designers to analyze systems that incorporate piezoelectric-based state switching with greater accuracy to ensure that these transients do not degrade the intended performance. Finally, if the switching does create unacceptable transients, controlling the duration of voltage dissipation enables control over the frequency content and peak amplitudes associated with the switch-induced acceleration transients.

PI and fuzzy logic controllers for shunt Active Power Filter--a report.

PubMed

P, Karuppanan; Mahapatra, Kamala Kanta

2012-01-01

This paper presents a shunt Active Power Filter (APF) for power quality improvements in terms of harmonics and reactive power compensation in the distribution network. The compensation process is based only on source current extraction that reduces the number of sensors as well as its complexity. A Proportional Integral (PI) or Fuzzy Logic Controller (FLC) is used to extract the required reference current from the distorted line-current, and this controls the DC-side capacitor voltage of the inverter. The shunt APF is implemented with PWM-current controlled Voltage Source Inverter (VSI) and the switching patterns are generated through a novel Adaptive-Fuzzy Hysteresis Current Controller (A-F-HCC). The proposed adaptive-fuzzy-HCC is compared with fixed-HCC and adaptive-HCC techniques and the superior features of this novel approach are established. The FLC based shunt APF system is validated through extensive simulation for diode-rectifier/R-L loads. Copyright © 2011 ISA. Published by Elsevier Ltd. All rights reserved.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

A high-voltage supply used on miniaturized RLG

NASA Astrophysics Data System (ADS)

Miao, Zhifei; Fan, Mingming; Wang, Yuepeng; Yin, Yan; Wang, Dongmei

2016-01-01

A high voltage power supply used in laser gyro is proposed in this paper. The power supply which uses a single DC 15v input and fly-back topology is adopted in the main circuit. The output of the power supply achieve high to 3.3kv voltage in order to light the RLG. The PFM control method is adopted to realize the rapid switching between the high voltage state and the maintain state. The resonant chip L6565 is used to achieve the zero voltage switching(ZVS), so the consumption is reduced and the power efficiency is improved more than 80%. A special circuit is presented in the control portion to ensure symmetry of the two RLG's arms current. The measured current accuracy is higher than 5‰ and the current symmetry of the two RLG's arms up to 99.2%.

An improved fault-tolerant control scheme for PWM inverter-fed induction motor-based EVs.

PubMed

Tabbache, Bekheïra; Benbouzid, Mohamed; Kheloui, Abdelaziz; Bourgeot, Jean-Matthieu; Mamoune, Abdeslam

2013-11-01

This paper proposes an improved fault-tolerant control scheme for PWM inverter-fed induction motor-based electric vehicles. The proposed strategy deals with power switch (IGBTs) failures mitigation within a reconfigurable induction motor control. To increase the vehicle powertrain reliability regarding IGBT open-circuit failures, 4-wire and 4-leg PWM inverter topologies are investigated and their performances discussed in a vehicle context. The proposed fault-tolerant topologies require only minimum hardware modifications to the conventional off-the-shelf six-switch three-phase drive, mitigating the IGBTs failures by specific inverter control. Indeed, the two topologies exploit the induction motor neutral accessibility for fault-tolerant purposes. The 4-wire topology uses then classical hysteresis controllers to account for the IGBT failures. The 4-leg topology, meanwhile, uses a specific 3D space vector PWM to handle vehicle requirements in terms of size (DC bus capacitors) and cost (IGBTs number). Experiments on an induction motor drive and simulations on an electric vehicle are carried-out using a European urban driving cycle to show that the proposed fault-tolerant control approach is effective and provides a simple configuration with high performance in terms of speed and torque responses. Copyright © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

NASA Astrophysics Data System (ADS)

Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

2007-03-01

We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

Voltage switching of a VO{sub 2} memory metasurface using ionic gel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldflam, M. D.; Liu, M. K.; Chapler, B. C.

2014-07-28

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarilymore » from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.« less

Hardware realization of an SVM algorithm implemented in FPGAs

NASA Astrophysics Data System (ADS)

Wiśniewski, Remigiusz; Bazydło, Grzegorz; Szcześniak, Paweł

2017-08-01

The paper proposes a technique of hardware realization of a space vector modulation (SVM) of state function switching in matrix converter (MC), oriented on the implementation in a single field programmable gate array (FPGA). In MC the SVM method is based on the instantaneous space-vector representation of input currents and output voltages. The traditional computation algorithms usually involve digital signal processors (DSPs) which consumes the large number of power transistors (18 transistors and 18 independent PWM outputs) and "non-standard positions of control pulses" during the switching sequence. Recently, hardware implementations become popular since computed operations may be executed much faster and efficient due to nature of the digital devices (especially concurrency). In the paper, we propose a hardware algorithm of SVM computation. In opposite to the existing techniques, the presented solution applies COordinate Rotation DIgital Computer (CORDIC) method to solve the trigonometric operations. Furthermore, adequate arithmetic modules (that is, sub-devices) used for intermediate calculations, such as code converters or proper sectors selectors (for output voltages and input current) are presented in detail. The proposed technique has been implemented as a design described with the use of Verilog hardware description language. The preliminary results of logic implementation oriented on the Xilinx FPGA (particularly, low-cost device from Artix-7 family from Xilinx was used) are also presented.

Decentralized Interleaving of Paralleled Dc-Dc Buck Converters: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Brian B; Rodriguez, Miguel; Sinha, Mohit

We present a decentralized control strategy that yields switch interleaving among parallel connected dc-dc buck converters without communication. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work represents the first fully decentralized strategy formore » switch interleaving of paralleled dc-dc buck converters.« less

Manual. According to the Calculation of Wires and Cables,

DTIC Science & Technology

1980-04-23

Tpezxaaaro TON. As, C Kay: (1). Designation. t2). Designation. (3). Current (permanent. Voltage constant. (4). Currant ivariable/ alternating . Voltage is the...variable/ alternating , general designatior. (5). Current variable/ alternating three-phase 5C Hz. (6). Ez. (7). Zero line (neutral). It is allcwed/assumed...diagrams of powsr supply iz is allowed/assumed high-voltage switch to dapict, as it is shown. (10). iinuings by relay, contactor and magnetic starter. It

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Astrophysics Data System (ADS)

Sturman, J. C.

1985-05-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Transformerless dc-Isolated Converter

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1987-01-01

Efficient voltage converter employs capacitive instead of transformer coupling to provide dc isolation. Offers buck/boost operation, minimal filtering, and low parts count, with possible application in photovoltaic power inverters, power supplies and battery charges. In photovoltaic inverter circuit with transformerless converter, Q2, Q3, Q4, and Q5 form line-commutated inverter. Switching losses and stresses nil because switching performed when current is zero.

A Passive EMI Filter with Access to the Ungrounded Motor Neutral Line-The Case that a General-Purpose Inverter is Directly Connected to a Three-Phase Grounded Voltage Source-

NASA Astrophysics Data System (ADS)

Doumoto, Takafumi; Akagi, Hirofumi

This paper proposes a small-sized passive EMI filter for the purpose of eliminating high-frequency shaft voltage and ground leakage current from an ac motor. The motor is driven by a general-purpose PWM inverter connected to a three-phase grounded voltage source. The passive EMI filter requires access to the ungrounded neutral point of the motor. This unique circuit configuration makes the common-mode inductor effective in reducing the high-frequency common-mode voltage generated by the PWM inverter with a carrier frequency of 15kHz. As a result, both high-frequency shaft voltage and ground leakage current can be eliminated very efficiently. However, the common-mode inductor may not play any role in reducing the low-frequency common-mode voltage generated by the diode rectifier, so that a low-frequency component still remains in the shaft voltage. Such a low-frequency shaft voltage may not produce any bad effect on motor bearings. The validity and effectiveness of the EMI filter is verified by experimental results obtained from a 200-V 5-kVA laboratory system.

High-voltage, high-power, solid-state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Optimum Design of LLC Resonant Converter using Inductance Ratio (Lm/Lr)

NASA Astrophysics Data System (ADS)

Palle, Kowstubha; Krishnaveni, K.; Ramesh Reddy, Kolli

2017-06-01

The main benefits of LLC resonant dc/dc converter over conventional series and parallel resonant converters are its light load regulation, less circulating currents, larger bandwidth for zero voltage switching, and less tuning of switching frequency for controlled output. An unique analytical tool, called fundamental harmonic approximation with peak gain adjustment is used for designing the converter. In this paper, an optimum design of the converter is proposed by considering three different design criterions with different values of inductance ratio (Lm/Lr) to achieve good efficiency at high input voltage. The optimum design includes the analysis in operating range, switching frequency range, primary side losses of a switch and stability. The analysis is carried out with simulation using the software tools like MATLAB and PSIM. The performance of the optimized design is demonstrated for a design specification of 12 V, 5 A output operating with an input voltage range of 300-400 V using FSFR 2100 IC of Texas instruments.

Analysis of a PWM Resonant Buck Chopper for Use as a Ship Service Converter Module

DTIC Science & Technology

1999-01-01

zonal architecture [2] has a number of advantages over the current radial distribution architecture. The radial network includes generators supplying...Several representative topologies are considered in this section. The literature is replete with softswitching dc-dc converter topologies and control...differs from a conventional PWM buck by the addition of a resonant network consisting of inductor Lr, capacitor Q, an auxiliary switch Sr, an auxiliary

Analytical modeling of eddy-current losses caused by pulse-width-modulation switching in permanent-magnet brushless direct-current motors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, F.; Nehl, T.W.

1998-09-01

Because of their high efficiency and power density the PM brushless dc motor is a strong candidate for electric and hybrid vehicle propulsion systems. An analytical approach is developed to predict the inverter high frequency pulse width modulation (PWM) switching caused eddy-current losses in a permanent magnet brushless dc motor. The model uses polar coordinates to take curvature effects into account, and is also capable of including the space harmonic effect of the stator magnetic field and the stator lamination effect on the losses. The model was applied to an existing motor design and was verified with the finite elementmore » method. Good agreement was achieved between the two approaches. Hence, the model is expected to be very helpful in predicting PWM switching losses in permanent magnet machine design.« less

Spin-transfer torque in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers

NASA Astrophysics Data System (ADS)

Velev, Julian P.; Merodio, Pablo; Pollack, Cesar; Kalitsov, Alan; Chshiev, Mairbek; Kioussis, Nicholas

2017-12-01

Using model calculations, we demonstrate a very high level of control of the spin-transfer torque (STT) by electric field in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers. We find that, for particular device parameters, toggling the polarization direction can switch the voltage-induced part of STT between a finite value and a value close to zero, i.e. quench and release the torque. Additionally, we demonstrate that under certain conditions the zero-voltage STT, i.e. the interlayer exchange coupling, can switch sign with polarization reversal, which is equivalent to reversing the magnetic ground state of the tunnel junction. This bias- and polarization-tunability of the STT could be exploited to engineer novel functionalities such as softening/hardening of the bit or increasing the signal-to-noise ratio in magnetic sensors, which can have important implications for magnetic random access memories or for combined memory and logic devices.

The 5-kW arcjet power electronics

NASA Technical Reports Server (NTRS)

Gruber, R. P.; Gott, R. W.; Haag, T. W.

1989-01-01

The initial design and evaluation of a 5 kW arcjet power electronics breadboard which as been integrated with a modified 1 kW design laboratory arcjet is presented. A single stage, 5 kW full bridge, pulse width modulated (PWM), power converter was developed which was phase shift regulated. The converter used metal oxide semiconductor field effect transistor (MOSFET) power switches and incorporated current mode control and an integral arcjet pulse ignition circuit. The unoptimized power efficiency was 93.5 and 93.9 percent at 5 kW and 50A output at input voltages of 130 and 150V, respectively. Line and load current regulation at 50A output was within one percent. The converter provided up to 6.6 kW to the arcjet with simulated ammonia used as a propellant.

Investigations into the use of energy storage in power system applications

NASA Astrophysics Data System (ADS)

Leung, Ka Kit

This thesis embodies research work on the design and implementation of novel fast responding battery energy storage systems, which, with sufficient capacity and rating, could remove the uncertainty in forecasting the annual peak demand. They would also benefit the day to day operation by curtailing the fastest demand variations, particularly at the daily peak periods. Energy storage that could curtail peak demands, when the most difficult operational problems occur offers a promising approach. Although AC energy cannot be stored, power electronic developments offer a fast responding interface between the AC network and DC energy stored in batteries. The attractive feature of the use of this energy storage could most effectively be located near the source of load variations, i.e. near consumers in the distribution networks. The proposed, three phase multi-purpose, Battery Energy Storage System will provide active and reactive power independent of the supply voltage with excellent power quality in terms of its waveform. Besides the above important functions applied at the distribution side of the utility, several new topologies have been developed to provide both Dynamic Voltage Regulator (DVR) and Unified Power Flow Controller (UPFC) functions for line compensation. These new topologies can provide fast and accurate control of power flow along a distribution corridor. The topologies also provide for fast damping of system oscillation due to transient or dynamic disturbances. Having demonstrated the various functions that the proposed Battery Energy Storage System can provide, the final part of the thesis investigates means of improving the performance of the proposed BESS. First, there is a need to reduce the switching losses by using soft switching instead of hard switching. A soft switching inverter using a parallel resonant dc-link (PRDCL) is proposed for use with the proposed BESS. The proposed PRDCL suppresses the dc-link voltage to zero for a very short time to allow zero voltage switching of inverter main switches without imposing excessive voltage and current stresses. Finally, in practice the battery terminal voltage fluctuates significantly as large current is being drawn or absorbed by the battery bank. When a hysteresis controller is used to control the supply line current, the ripple magnitude and frequency of the controlled current is highly dependent on the battery voltage, line inductance and the band limits of the controller. Even when these parameters are constant, the switching frequency can vary over quite a large range. A novel method is proposed to overcome this problem by controlling the dc voltage level by means of a dc-dc converter to provide a controllable voltage at the inverter dc terminal irrespective of the battery voltage variations. By proper control of the magnitude and frequency of the output of the DC-DC converter, the switching frequency can be made close to constant. A mathematical proof has been formulated and results from the simulation confirm that using the proposed technique, the frequency band has been significantly reduced and for the theoretical case, a single switching frequency is observed. The main disadvantage is the need to have an extra dc-dc converter, but this is relatively cheap and easy to obtain.

SEPP-ZVS High Frequency Inverter Incorporating Auxiliary Switch

NASA Astrophysics Data System (ADS)

Ogiwara, Hiroyuki; Itoi, Misao; Nakaoka, Mutsuo

This paper presents a novel circuit topology to attain ZVS operation of a high frequency inverter over a wide range output power regulation using a PWM control technique by connecting an auxiliary switch to the conventional single ended push-pull (SEPP) ZVS high frequency inverter. A switching current is injected into the main switches via the auxiliary switch only during the short period between its turn-on and off times to supply a current required for its ZVS operation.

Full-Circle Resolver-to-Linear-Analog Converter

NASA Technical Reports Server (NTRS)

Alhorn, Dean C.; Smith, Dennis A.; Howard, David E.

2005-01-01

A circuit generates sinusoidal excitation signals for a shaft-angle resolver and, like the arctangent circuit described in the preceding article, generates an analog voltage proportional to the shaft angle. The disadvantages of the circuit described in the preceding article arise from the fact that it must be made from precise analog subcircuits, including a functional block capable of implementing some trigonometric identities; this circuitry tends to be expensive, sensitive to noise, and susceptible to errors caused by temperature-induced drifts and imprecise matching of gains and phases. These disadvantages are overcome by the design of the present circuit. The present circuit (see figure) includes an excitation circuit, which generates signals Ksin(Omega(t)) and Kcos(Omega(t)) [where K is an amplitude, Omega denotes 2(pi)x a carrier frequency (the design value of which is 10 kHz), and t denotes time]. These signals are applied to the excitation terminals of a shaft-angle resolver, causing the resolver to put out signals C sin(Omega(t)-Theta) and C cos(Omega(t)-Theta). The cosine excitation signal and the cosine resolver output signal are processed through inverting comparator circuits, which are configured to function as inverting squarers, to obtain logic-level or square-wave signals .-LL[cos(Omega(t)] and -LL[cos(Omega(t)-Theta)], respectively. These signals are fed as inputs to a block containing digital logic circuits that effectively measure the phase difference (which equals Theta between the two logic-level signals). The output of this block is a pulse-width-modulated signal, PWM(Theta), the time-averaged value of which ranges from 0 to 5 VDC as Theta ranges from .180 to +180deg. PWM(Theta) is fed to a block of amplifying and level-shifting circuitry, which converts the input PWM waveform to an output waveform that switches between precise reference voltage levels of +10 and -10 V. This waveform is processed by a two-pole, low-pass filter, which removes the carrier-frequency component. The final output signal is a DC potential, proportional to Theta that ranges continuously from -10 V at Theta = -180deg to +10 V at Theta = +180deg..

Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation

NASA Astrophysics Data System (ADS)

Lee, Jaeseong; Lee, Daesu; Cho, Sang June; Seo, Jung-Hun; Liu, Dong; Eom, Chang-Beom; Ma, Zhenqiang

2017-09-01

Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13 V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27 GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns.

Decentralized Interleaving of Paralleled Dc-Dc Buck Converters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Brian B; Rodriguez, Miguel; Sinha, Mohit

We present a decentralized control strategy that yields switch interleaving among parallel-connected dc-dc buck converters. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform and no communication between different controllers is needed. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work presents themore » first fully decentralized strategy for switch interleaving in paralleled dc-dc buck converters.« less

First-order metal-insulator transition not accompanied by the structural phase transition observed in VO2-based devices

NASA Astrophysics Data System (ADS)

Kim, Hyun-Tak; Chae, Byung-Gyu; Kim, Bong-Jun; Lee, Yong-Wook; Yun, Sun-Jin; Kang, Kwang-Yong

2006-03-01

An abrupt first-order metal-insulator transition (MIT) is observed during the application of a switching pulse voltage to VO2-based two-terminal devices. When the abrupt MIT occurs, the structural phase transition (SPT) is investigated by a micro- Raman spectroscopy and a micro-XRD. The result shows that the MIT is not accompanied with the structural phase transition (SPT); the abrupt MIT is prior to the SPT. Moreover, any switching pulse over a threshold voltage of 7.1 V for the MIT enabled the device material to transform efficiently from an insulator to a metal. The measured delay time from the source switching pulse to an induced MIT pulse is an order of 20 nsec which is much less than a delay time of about one msec deduced by thermal model. This indicates that the first-order MIT does not occur due to thermal. We think this MIT is the Mott transition. (Reference: New J. Phys. 6 (1994) 52 (www.njp.org), Appl. Phys. Lett. 86 (2005) 242101, Physica B 369 (2005. December) xxxx)

DC-DC Type High-Frequency Link DC for Improved Power Quality of Cascaded Multilevel Inverter

NASA Astrophysics Data System (ADS)

Sadikin, Muhammad; Senjyu, Tomonobu; Yona, Atsushi

2013-06-01

Multilevel inverters are emerging as a new breed of power converter options for power system applications. Recent advances in power switching devices enabled the suitability of multilevel inverters for high voltage and high power applications because they are connecting several devices in series without the need of component matching. Usually, a transformerless battery energy storage system, based on a cascaded multilevel inverter, is used as a measure for voltage and frequency deviations. System can be reduced in size, weight, and cost of energy storage system. High-frequency link circuit topology is advantageous in realizing compact and light-weight power converters for uninterruptible power supply systems, new energy systems using photovoltaic-cells, fuel-cells and so on. This paper presents a DC-DC type high-frequency link DC (HFLDC) cascaded multilevel inverter. Each converter cell is implemented a control strategy for two H-bridge inverters that are controlled with the same multicarrier pulse width modulation (PWM) technique. The proposed cascaded multilevel inverter generates lower voltage total harmonic distortion (THD) in comparison with conventional cascaded multilevel inverter. Digital simulations are carried out using PSCAD/EMTDC to validate the performance of the proposed cascaded multilevel inverter.

Detecting the position of the moving-iron solenoid by non-displacement sensor based on parameter identification of flux linkage characteristics

NASA Astrophysics Data System (ADS)

Wang, Xuping; Quan, Long; Xiong, Guangyu

2013-11-01

Currently, most researches use signals, such as the coil current or voltage of solenoid, to identify parameters; typically, parameter identification method based on variation rate of coil current is applied for position estimation. The problem exists in these researches that the detected signals are prone to interference and difficult to obtain. This paper proposes a new method for detecting the core position by using flux characteristic quantity, which adds a new group of secondary winding to the coil of the ordinary switching electromagnet. On the basis of electromagnetic coupling theory analysis and simulation research of the magnetic field regarding the primary and secondary winding coils, and in accordance with the fact that under PWM control mode varying core position and operating current of windings produce different characteristic of flux increment of the secondary winding. The flux increment of the electromagnet winding can be obtained by conducting time domain integration for the induced voltage signal of the extracted secondary winding, and the core position from the two-dimensional fitting curve of the operating winding current and flux-linkage characteristic quantity of solenoid are calculated. The detecting and testing system of solenoid core position is developed based on the theoretical research. The testing results show that the flux characteristic quantity of switching electromagnet magnetic circuit is able to effectively show the core position and thus to accomplish the non-displacement transducer detection of the said core position of the switching electromagnet. This paper proposes a new method for detecting the core position by using flux characteristic quantity, which provides a new theory and method for switch solenoid to control the proportional valve.

SVPWM Technique with Varying DC-Link Voltage for Common Mode Voltage Reduction in a Matrix Converter and Analytical Estimation of its Output Voltage Distortion

NASA Astrophysics Data System (ADS)

Padhee, Varsha

Common Mode Voltage (CMV) in any power converter has been the major contributor to premature motor failures, bearing deterioration, shaft voltage build up and electromagnetic interference. Intelligent control methods like Space Vector Pulse Width Modulation (SVPWM) techniques provide immense potential and flexibility to reduce CMV, thereby targeting all the afore mentioned problems. Other solutions like passive filters, shielded cables and EMI filters add to the volume and cost metrics of the entire system. Smart SVPWM techniques therefore, come with a very important advantage of being an economical solution. This thesis discusses a modified space vector technique applied to an Indirect Matrix Converter (IMC) which results in the reduction of common mode voltages and other advanced features. The conventional indirect space vector pulse-width modulation (SVPWM) method of controlling matrix converters involves the usage of two adjacent active vectors and one zero vector for both rectifying and inverting stages of the converter. By suitable selection of space vectors, the rectifying stage of the matrix converter can generate different levels of virtual DC-link voltage. This capability can be exploited for operation of the converter in different ranges of modulation indices for varying machine speeds. This results in lower common mode voltage and improves the harmonic spectrum of the output voltage, without increasing the number of switching transitions as compared to conventional modulation. To summarize it can be said that the responsibility of formulating output voltages with a particular magnitude and frequency has been transferred solely to the rectifying stage of the IMC. Estimation of degree of distortion in the three phase output voltage is another facet discussed in this thesis. An understanding of the SVPWM technique and the switching sequence of the space vectors in detail gives the potential to estimate the RMS value of the switched output voltage of any converter. This conceivably aids the sizing and design of output passive filters. An analytical estimation method has been presented to achieve this purpose for am IMC. Knowledge of the fundamental component in output voltage can be utilized to calculate its Total Harmonic Distortion (THD). The effectiveness of the proposed SVPWM algorithms and the analytical estimation technique is substantiated by simulations in MATLAB / Simulink and experiments on a laboratory prototype of the IMC. Proper comparison plots have been provided to contrast the performance of the proposed methods with the conventional SVPWM method. The behavior of output voltage distortion and CMV with variation in operating parameters like modulation index and output frequency has also been analyzed.

A new type of accelerator power supply based on voltage-type space vector PWM rectification technology

NASA Astrophysics Data System (ADS)

Wu, Fengjun; Gao, Daqing; Shi, Chunfeng; Huang, Yuzhen; Cui, Yuan; Yan, Hongbin; Zhang, Huajian; Wang, Bin; Li, Xiaohui

2016-08-01

To solve the problems such as low input power factor, a large number of AC current harmonics and instable DC bus voltage due to the diode or thyristor rectifier used in an accelerator power supply, particularly in the Heavy Ion Research Facility in Lanzhou-Cooler Storage Ring (HIRFL-CSR), we designed and built up a new type of accelerator power supply prototype base on voltage-type space vector PWM (SVPWM) rectification technology. All the control strategies are developed in TMS320C28346, which is a digital signal processor from TI. The experimental results indicate that an accelerator power supply with a SVPWM rectifier can solve the problems above well, and the output performance such as stability, tracking error and ripple current meet the requirements of the design. The achievement of prototype confirms that applying voltage-type SVPWM rectification technology in an accelerator power supply is feasible; and it provides a good reference for design and build of this new type of power supply.

Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

PubMed Central

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

2014-01-01

The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

PubMed

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

2014-08-04

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Study of a control strategy for grid side converter in doubly- fed wind power system

NASA Astrophysics Data System (ADS)

Zhu, D. J.; Tan, Z. L.; Yuan, F.; Wang, Q. Y.; Ding, M.

2016-08-01

The grid side converter is an important part of the excitation system of doubly-fed asynchronous generator used in wind power system. As a three-phase voltage source PWM converter, it can not only transfer slip power in the form of active power, but also adjust the reactive power of the grid. This paper proposed a control approach for improving its performance. In this control approach, the dc voltage is regulated by a sliding mode variable structure control scheme and current by a variable structure controller based on the input output linearization. The theoretical bases of the sliding mode variable structure control were introduced, and the stability proof was presented. Switching function of the system has been deduced, sliding mode voltage controller model has been established, and the output of the outer voltage loop is the instruction of the inner current loop. Affine nonlinear model of two input two output equations on d-q axis for current has been established its meeting conditions of exact linearization were proved. In order to improve the anti-jamming capability of the system, a variable structure control was added in the current controller, the control law was deduced. The dual-loop control with sliding mode control in outer voltage loop and linearization variable structure control in inner current loop was proposed. Simulation results demonstrate the effectiveness of the proposed control strategy even during the dc reference voltage and system load variation.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Experimental investigation of mode transitions in asymmetric capacitively coupled radio-frequency Ne and CF4 plasmas

NASA Astrophysics Data System (ADS)

Liu, Gang-Hu; Liu, Yong-Xin; Bai, Li-Shui; Zhao, Kai; Wang, You-Nian

2018-02-01

The dependence of the electron density and the emission intensity on external parameters during the transitions of the electron power absorption mode is experimentally studied in asymmetric electropositive (neon) and electronegative (CF4) capacitively coupled radio-frequency plasmas. The spatio-temporal distribution of the emission intensity is measured with phase resolved optical emission spectroscopy and the electron density at the discharge center is measured by utilizing a floating hairpin probe. In neon discharge, the emission intensity increases almost linearly with the rf voltage at all driving frequencies covered here, while the variation of the electron density with the rf voltage behaves differently at different driving frequencies. In particular, the electron density increases linearly with the rf voltage at high driving frequencies, while at low driving frequencies the electron density increases slowly at the low-voltage side and, however, grows rapidly, when the rf voltage is higher than a certain value, indicating a transition from α to γ mode. The rf voltage, at which the mode transition occurs, increases with the decrease of the driving frequency/the working pressure. By contrast, in CF4 discharge, three different electron power absorption modes can be observed and the electron density and emission intensity do not exhibit a simple dependence on the rf voltage. In particular, the electron density exhibits a minimum at a certain rf voltage when the electron power absorption mode is switching from drift-ambipolar to the α/γ mode. A minimum can also be found in the emission intensity at a higher rf voltage when a discharge is switching into the γ mode.

Study of the generator/motor operation of induction machines in a high frequency link space power system

NASA Technical Reports Server (NTRS)

Lipo, Thomas A.; Sood, Pradeep K.

1987-01-01

Static power conversion systems have traditionally utilized dc current or voltage source links for converting power from one ac or dc form to another since it readily achieves the temporary energy storage required to decouple the input from the output. Such links, however, result in bulky dc capacitors and/or inductors and lead to relatively high losses in the converters due to stresses on the semiconductor switches. The feasibility of utilizing a high frequency sinusoidal voltage link to accomplish the energy storage and decoupling function is examined. In particular, a type of resonant six pulse bridge interface converter is proposed which utilizes zero voltage switching principles to minimize switching losses and uses an easy to implement technique for pulse density modulation to control the amplitude, frequency, and the waveshape of the synthesized low frequency voltage or current. Adaptation of the proposed topology for power conversion to single-phase ac and dc voltage or current outputs is shown to be straight forward. The feasibility of the proposed power circuit and control technique for both active and passive loads are verified by means of simulation and experiment.

Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

NASA Astrophysics Data System (ADS)

Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

Linear induction accelerators made from pulse-line cavities with external pulse injection.

PubMed

Smith, I

1979-06-01

Two types of linear induction accelerator have been reported previously. In one, unidirectional voltage pulses are generated outside the accelerator and injected into the accelerator cavity modules, which contain ferromagnetic material to reduce energy losses in the form of currents induced, in parallel with the beam, in the cavity structure. In the other type, the accelerator cavity modules are themselves pulse-forming lines with energy storage and switches; parallel current losses are made zero by the use of circuits that generate bidirectional acceleration waveforms with a zero voltage-time integral. In a third type of design described here, the cavities are externally driven, and 100% efficient coupling of energy to the beam is obtained by designing the external pulse generators to produce bidirectional voltage waveforms with zero voltage-time integral. A design for such a pulse generator is described that is itself one hundred percent efficient and which is well suited to existing pulse power techniques. Two accelerator cavity designs are described that can couple the pulse from such a generator to the beam; one of these designs provides voltage doubling. Comparison is made between the accelerating gradients that can be obtained with this and the preceding types of induction accelerator.

Single-state electronic ballast with dimming feature and unity power factor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, T.F.; Yu, T.H.; Chiang, M.C.

1998-05-01

Analysis, design, and practical consideration of a single-stage electronic ballast with dimming feature and unity power factor are presented in this paper. The proposed single-stage ballast is the combination of a boost converter and a half-bridge series-resonant parallel-loaded inverter. The boost semistage working in the discontinuous conduction mode functions as a power factor corrector and the inverter semistage operated above resonance are employed to ballast the lamp. Replacing the lamp with the plasma model, analysis of the ballast is fulfilled. The dimming feature is carried out by pulse-width modulation (PWM) and variable-frequency controls simultaneously. The proposed single-stage ballast is suitablemore » for applications with moderate power level and low-line voltage while requiring a high-output voltage. It can save a controller, an active switch and its driver, reduce size, and possibly increase system reliability while requiring two additional diodes over a conventional two-stage system. A prototype was implemented to verify the theoretical discussion. The hardware measurements have shown that the desired performance can be achieved feasibly.« less

Flux-Based Deadbeat Control of Induction-Motor Torque

NASA Technical Reports Server (NTRS)

Kenny, Barbara H.; Lorenz, Robert D.

2003-01-01

An improved method and prior methods of deadbeat direct torque control involve the use of pulse-width modulation (PWM) of applied voltages. The prior methods are based on the use of stator flux and stator current as state variables, leading to mathematical solutions of control equations in forms that do not lend themselves to clear visualization of solution spaces. In contrast, the use of rotor and stator fluxes as the state variables in the present improved method lends itself to graphical representations that aid in understanding possible solutions under various operating conditions. In addition, the present improved method incorporates the superposition of high-frequency carrier signals for use in a motor-self-sensing technique for estimating the rotor shaft angle at any speed (including low or even zero speed) without need for additional shaft-angle-measuring sensors.

Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry.

PubMed

Lee, Chanwoo; Kim, Inpyo; Choi, Wonsup; Shin, Hyunjung; Cho, Jinhan

2009-04-21

We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated silicon substrates using a sol-gel process. The sol-gel-derived layer was converted into a TiO2 film by thermal annealing. A top electrode (Ag electrode) was then coated onto the TiO2 films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (about 0.6 VRESET and 1.4 VSET). In addition, it was confirmed that the electrical properties (i.e., retention time, cycling test and switching speed) of the sol-gel-derived devices were comparable to those of vacuum deposited devices. This approach can be extended to a variety of binary TMOs such as niobium oxides. The reported approach offers new opportunities for preparing the binary TMO-based resistive switching memory devices allowing a facile solution processing.

Experimental Discussion on a 6-kW, 2-kWh Battery Energy Storage System Using a Bidirectional Isolated DC/DC Converter

NASA Astrophysics Data System (ADS)

Abe, Takahiro; Tan, Nadia Mei Lin; Akagi, Hirofumi

This paper presents an experimental discussion on a 6-kW, full-bridge, zero-voltage switching bidirectional isolated dc/dc converter for a 53.2-V, 2-kWh Li-ion battery energy storage system. The combination of high-frequency switching devices, 600-V/200-A IGBTs and 100-V/500-A MOSFETs with a high-frequency transformer reduces the weight and physical size of the bidirectional isolated dc/dc converter. The dc voltage on the high-voltage side of the converter is controlled in a range of 300V to 355V as the battery voltage on the low-voltage side varies from 50V to 59V. Experimental verification of bidirectional power flow into (battery charging) or out of (battery discharging) the Li-ion battery bank is also presented. The maximal efficiency of the dc/dc converter is measured to be 98.1% during charging and 98.2% during discharging, excluding the gate drive loss and control circuit loss.

Emergence of domains and nonlinear transport in the zero-resistance state.

PubMed

Dmitriev, I A; Khodas, M; Mirlin, A D; Polyakov, D G

2013-11-15

We study transport in the domain state, the so-called zero-resistance state, that emerges in a two-dimensional electron system in which the combined action of microwave radiation and magnetic field produces a negative absolute conductivity. We show that the voltage-biased system has a rich phase diagram in the system size and voltage plane, with second- and first-order transitions between the domain and homogeneous states for small and large voltages, respectively. We find the residual negative dissipative resistance in the stable domain state.

Simplified Design Equations for Class-E Neural Prosthesis Transmitters

PubMed Central

Troyk, Philip; Hu, Zhe

2013-01-01

Extreme miniaturization of implantable electronic devices is recognized as essential for the next generation of neural prostheses, owing to the need for minimizing the damage and disruption of the surrounding neural tissue. Transcutaneous power and data transmission via a magnetic link remains the most effective means of powering and controlling implanted neural prostheses. Reduction in the size of the coil, within the neural prosthesis, demands the generation of a high-intensity radio frequency magnetic field from the extracoporeal transmitter. The Class-E power amplifier circuit topology has been recognized as a highly effective means of producing large radio frequency currents within the transmitter coil. Unfortunately, design of a Class-E circuit is most often fraught by the need to solve a complex set of equations so as to implement both the zero-voltage-switching and zero-voltage-derivative-switching conditions that are required for efficient operation. This paper presents simple explicit design equations for designing the Class-E circuit topology. Numerical design examples are presented to illustrate the design procedure. PMID:23292784

Radiation Effects on DC-DC Converters

NASA Technical Reports Server (NTRS)

Zhang, De-Xin; AbdulMazid, M. D.; Attia, John O.; Kankam, Mark D. (Technical Monitor)

2001-01-01

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Regulated dc-to-dc converter for voltage step-up or step-down with input-output isolation

NASA Technical Reports Server (NTRS)

Feng, S. Y.; Wilson, T. G. (Inventor)

1973-01-01

A closed loop regulated dc-to-dc converter employing an unregulated two winding inductive energy storage converter is provided by using a magnetically coupled multivibrator acting as duty cycle generator to drive the converter. The multivibrator is comprised of two transistor switches and a saturable transformer. The output of the converter is compared with a reference in a comparator which transmits a binary zero until the output exceeds the reference. When the output exceeds the reference, the binary output of the comparator drives transistor switches to turn the multivibrator off. The multivibrator is unbalanced so that a predetermined transistor will always turn on first when the binary feedback signal becomes zero.

Analysis and development of fourth order LCLC resonant based capacitor charging power supply for pulse power applications.

PubMed

Naresh, P; Hitesh, C; Patel, A; Kolge, T; Sharma, Archana; Mittal, K C

2013-08-01

A fourth order (LCLC) resonant converter based capacitor charging power supply (CCPS) is designed and developed for pulse power applications. Resonant converters are preferred t utilize soft switching techniques such as zero current switching (ZCS) and zero voltage switching (ZVS). An attempt has been made to overcome the disadvantages in 2nd and 3rd resonant converter topologies; hence a fourth order resonant topology is used in this paper for CCPS application. In this paper a novel fourth order LCLC based resonant converter has been explored and mathematical analysis carried out to calculate load independent constant current. This topology provides load independent constant current at switching frequency (fs) equal to resonant frequency (fr). By changing switching condition (on time and dead time) this topology has both soft switching techniques such as ZCS and ZVS for better switching action to improve the converter efficiency. This novel technique has special features such as low peak current through switches, DC blocking for transformer, utilizing transformer leakage inductance as resonant component. A prototype has been developed and tested successfully to charge a 100 μF capacitor to 200 V.

Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2017-01-01

In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a Ni/Si3N4/Si structure. The abrupt, step-like gradual and continuous gradual reset transitions are largely determined by the low-resistance state (LRS). For abrupt reset switching, the large conducting path shows ohmic behavior or has a weak nonlinear current-voltage (I-V) characteristics in the LRS. For gradual switching, including both the step-like and continuous reset types, trap-assisted direct tunneling is dominant in the low-voltage regime, while trap-assisted Fowler-Nordheim tunneling is dominant in the high-voltage regime, thus causing nonlinear I-V characteristics. More importantly, we evaluate the multi-level capabilities of the two different gradual switching types, including both step-like and continuous reset behavior, using identical and incremental voltage conditions. Finer control of the conductance level with good uniformity is achieved in continuous gradual reset switching when compared to that in step-like gradual reset switching. For continuous reset switching, a single conducting path, which initially has a tunneling gap, gradually responds to pulses with even and identical amplitudes, while for step-like reset switching, the multiple conducting paths only respond to incremental pulses to obtain effective multi-level states.

Fast controller for a unity-power-factor PWM rectifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eissa, M.O.; Leeb, S.B.; Verghese, G.C.

1996-01-01

This paper presents an analog implementation of a fast controller for a unity-power-factor (UPF) PWM rectifier. The best settling times of many popular controllers for this type of converter are on the order of a few line cycles, corresponding to bandwidths under 20 Hz. The fast controller demonstrated in this paper can exercise control action at a rate comparable to the switching frequency rather than the line frequency. In order to accomplish this while maintaining unity power factor during steady-state operation, the fast controller employs a ripple-feedback cancellation scheme.

Voltage-induced switching of an antiferromagnetically ordered topological Dirac semimetal

NASA Astrophysics Data System (ADS)

Kim, Youngseok; Kang, Kisung; Schleife, André; Gilbert, Matthew J.

2018-04-01

An antiferromagnetic semimetal has been recently identified as a new member of topological semimetals that may host three-dimensional symmetry-protected Dirac fermions. A reorientation of the Néel vector may break the underlying symmetry and open a gap in the quasiparticle spectrum, inducing the (semi)metal-insulator transition. Here, we predict that such a transition may be controlled by manipulating the chemical potential location of the material. We perform both analytical and numerical analysis on the thermodynamic potential of the model Hamiltonian and find that the gapped spectrum is preferred when the chemical potential is located at the Dirac point. As the chemical potential deviates from the Dirac point, the system shows a possible transition from the gapped to the gapless phase and switches the corresponding Néel vector configuration. We perform density functional theory calculations to verify our analysis using a realistic material and discuss a two terminal transport measurement as a possible route to identify the voltage-induced switching of the Néel vector.

High-temperature brushless DC motor controller

DOEpatents

Cieslewski, Crzegorz; Lindblom, Scott C.; Maldonado, Frank J.; Eckert, Michael Nathan

2017-05-16

A motor control system for deployment in high temperature environments includes a controller; a first half-bridge circuit that includes a first high-side switching element and a first low-side switching element; a second half-bridge circuit that includes a second high-side switching element and a second low-side switching element; and a third half-bridge circuit that includes a third high-side switching element and a third; low-side switching element. The motor controller is arranged to apply a pulse width modulation (PWM) scheme to switch the first half-bridge circuit, second half-bridge circuit, and third half-bridge circuit to power a motor.

Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

NASA Astrophysics Data System (ADS)

Yang, Y. C.; Pan, F.; Zeng, F.; Liu, M.

2009-12-01

ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher Roff/Ron ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.

Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window

NASA Astrophysics Data System (ADS)

Zheng, Hong; Kim, Hyung Jun; Yang, Paul; Park, Jong-Sung; Kim, Dong Wook; Lee, Hyun Ho; Kang, Chi Jung; Yoon, Tae-Sik

2017-05-01

Ag/CeO2(∼45 nm)/Pt devices exhibited forming-free bipolar resistive switching with a large memory window (low-resistance-state (LRS)/high-resistance-state (HRS) ratio >106) at a low switching voltage (<±1 ∼ 2 V) in voltage sweep condition. Also, they retained a large memory window (>104) at a pulse operation (±5 V, 50 μs). The high oxygen ionic conductivity of the CeO2 layer as well as the migration of silver facilitated the formation of filament for the transition to LRS at a low voltage without a high voltage forming operation. Also, a certain amount of defects in the CeO2 layer was required for stable HRS with space-charge-limited-conduction, which was confirmed comparing the devices with non-annealed and annealed CeO2 layers.

Power flow control based solely on slow feedback loop for heart pump applications.

PubMed

Wang, Bob; Hu, Aiguo Patrick; Budgett, David

2012-06-01

This paper proposes a new control method for regulating power flow via transcutaneous energy transfer (TET) for implantable heart pumps. Previous work on power flow controller requires a fast feedback loop that needs additional switching devices and resonant capacitors to be added to the primary converter. The proposed power flow controller eliminates these additional components, and it relies solely on a slow feedback loop to directly drive the primary converter to meet the heart pump power demand and ensure zero voltage switching. A controlled change in switching frequency varies the resonant tank shorting period of a current-fed push-pull resonant converter, thus changing the magnitude of the primary resonant voltage, as well as the tuning between primary and secondary resonant tanks. The proposed controller has been implemented successfully using an analogue circuit and has reached an end-to-end power efficiency of 79.6% at 10 W with a switching frequency regulation range of 149.3 kHz to 182.2 kHz.

A High Power Density Single-Phase PWM Rectifier with Active Ripple Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ning, Puqi; Wang, Ruxi; Wang, Fei

It is well known that there exist second-order harmonic current and corresponding ripple voltage on dc bus for single phase PWM rectifiers. The low frequency harmonic current is normally filtered using a bulk capacitor in the bus which results in low power density. This paper proposed an active ripple energy storage method that can effectively reduce the energy storage capacitance. The feed-forward control method and design considerations are provided. Simulation and 15 kW experimental results are provided for verification purposes.

Electromechanical systems with transient high power response operating from a resonant ac link

NASA Technical Reports Server (NTRS)

Burrows, Linda M.; Hansen, Irving G.

1992-01-01

The combination of an inherently robust asynchronous (induction) electrical machine with the rapid control of energy provided by a high frequency resonant ac link enables the efficient management of higher power levels with greater versatility. This could have a variety of applications from launch vehicles to all-electric automobiles. These types of systems utilize a machine which is operated by independent control of both the voltage and frequency. This is made possible by using an indirect field-oriented control method which allows instantaneous torque control all four operating quadrants. Incorporating the ac link allows the converter in these systems to switch at the zero crossing of every half cycle of the ac waveform. This zero loss switching of the link allows rapid energy variations to be achieved without the usual frequency proportional switching loss. Several field-oriented control systems were developed under contract to NASA.

Electric-field-induced extremely large change in resistance in graphene ferromagnets

NASA Astrophysics Data System (ADS)

Song, Yu

2018-01-01

A colossal magnetoresistance (˜100×10^3% ) and an extremely large magnetoresistance (˜1×10^6% ) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not applicable for realistic devices. In this work, we propose a device that can generate even larger changes in resistance in a zero-magnetic field and at a high temperature. The device is composed of graphene under two strips of yttrium iron garnet (YIG), where two gate voltages are applied to cancel the heavy charge doping in the YIG-induced half-metallic ferromagnets. By calculations using the Landauer-Büttiker formalism, we demonstrate that, when a proper gate voltage is applied on the free ferromagnet, changes in resistance up to 305×10^6% (16×10^3% ) can be achieved at the liquid helium (nitrogen) temperature and in a zero magnetic field. We attribute such a remarkable effect to a gate-induced full-polarization reversal in the free ferromagnet, which results in a metal-state to insulator-state transition in the device. We also find that the proposed effect can be realized in devices using other magnetic insulators, such as EuO and EuS. Our work should be helpful for developing a realistic switching device that is energy saving and CMOS-technology compatible.

An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

NASA Astrophysics Data System (ADS)

Lee, Sin-woo; Do, Hyun-Lark

2016-12-01

This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

Shuttle-promoted nano-mechanical current switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Taegeun, E-mail: tsong@ictp.it; Kiselev, Mikhail N.; Gorelik, Leonid Y.

2015-09-21

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instabilitymore » and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.« less

Unsplit bipolar pulse forming line

DOEpatents

Rhodes, Mark A [Pleasanton, CA

2011-05-24

A bipolar pulse forming transmission line module and system for linear induction accelerators having first, second, third, and fourth planar conductors which form a sequentially arranged interleaved stack having opposing first and second ends, with dielectric layers between the conductors. The first and second planar conductors are connected to each other at the first end, and the first and fourth planar conductors are connected to each other at the second end via a shorting plate. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short at the first end a high voltage from the third planar conductor to the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

Giant thermal spin torque assisted magnetic tunnel junction switching

NASA Astrophysics Data System (ADS)

Pushp, Aakash

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

NASA Astrophysics Data System (ADS)

Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

2014-12-01

Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

Proportional mechanical ventilation through PWM driven on/off solenoid valve.

PubMed

Sardellitti, I; Cecchini, S; Silvestri, S; Caldwell, D G

2010-01-01

Proportional strategies for artificial ventilation are the most recent form of synchronized partial ventilatory assistance and intra-breath control techniques available in clinical practice. Currently, the majority of commercial ventilators allowing proportional ventilation uses proportional valves to generate the flow rate pattern. This paper proposes on-off solenoid valves for proportional ventilation given their small size, low cost and short switching time, useful for supplying high frequency ventilation. A new system based on a novel fast switching driver circuit combined with on/off solenoid valve is developed. The average short response time typical of onoff solenoid valves was further reduced through the driving circuit for the implementation of PWM control. Experimental trials were conducted for identifying the dynamic response of the PWM driven on/off valve and for verifying its effectiveness in generating variable-shaped ventilatory flow rate patterns. The system was able to smoothly follow the reference flow rate patterns also changing in time intervals as short as 20 ms, achieving a flow rate resolution up to 1 L/min and repeatability in the order of 0.5 L/min. Preliminary results showed the feasibility of developing a stand alone portable device able to generate both proportional and high frequency ventilation by only using on-off solenoid valves.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

A multioutput LLC-type parallel resonant converter

NASA Astrophysics Data System (ADS)

Liu, Rui; Lee, C. Q.; Upadhyay, Anand K.

1992-07-01

When an LLC-type parallel resonant converter (LLC-PRC) operates above resonant frequency, the switching transistors can be turned off at zero voltage. Further study reveals that the LLC-PRC possesses the advantage of lower converter voltage gain as compared with the conventional PRC. Based on analytic results, a complete set of design curves is obtained, from which a systematic design procedure is developed. Experimental results from a 150 W 150 kHz multioutput LLC-type PRC power supply are presented.

The COP9 Signalosome Converts Temporal Hormone Signaling to Spatial Restriction on Neural Competence

PubMed Central

Huang, Yi-Chun; Lu, Yu-Nung; Wu, June-Tai; Chien, Cheng-Ting; Pi, Haiwei

2014-01-01

During development, neural competence is conferred and maintained by integrating spatial and temporal regulations. The Drosophila sensory bristles that detect mechanical and chemical stimulations are arranged in stereotypical positions. The anterior wing margin (AWM) is arrayed with neuron-innervated sensory bristles, while posterior wing margin (PWM) bristles are non-innervated. We found that the COP9 signalosome (CSN) suppresses the neural competence of non-innervated bristles at the PWM. In CSN mutants, PWM bristles are transformed into neuron-innervated, which is attributed to sustained expression of the neural-determining factor Senseless (Sens). The CSN suppresses Sens through repression of the ecdysone signaling target gene broad (br) that encodes the BR-Z1 transcription factor to activate sens expression. Strikingly, CSN suppression of BR-Z1 is initiated at the prepupa-to-pupa transition, leading to Sens downregulation, and termination of the neural competence of PWM bristles. The role of ecdysone signaling to repress br after the prepupa-to-pupa transition is distinct from its conventional role in activation, and requires CSN deneddylating activity and multiple cullins, the major substrates of deneddylation. Several CSN subunits physically associate with ecdysone receptors to represses br at the transcriptional level. We propose a model in which nuclear hormone receptors cooperate with the deneddylation machinery to temporally shutdown downstream target gene expression, conferring a spatial restriction on neural competence at the PWM. PMID:25393278

Reactive power compensating system

DOEpatents

Williams, Timothy J.; El-Sharkawi, Mohamed A.; Venkata, Subrahmanyam S.

1987-01-01

The reactive power of an induction machine is compensated by providing fixed capacitors on each phase line for the minimum compensation required, sensing the current on one line at the time its voltage crosses zero to determine the actual compensation required for each phase, and selecting switched capacitors on each line to provide the balance of the compensation required.

Addressing On-Chip Power Converstion and Dissipation Issues in Many-Core System-on-a-Chip Based on Conventional Silicon and Emerging Nanotechnologies

NASA Astrophysics Data System (ADS)

Ashenafi, Emeshaw

Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse-with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on-ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.

Switching effects and spin-valley Andreev resonant peak shifting in silicene superconductor

NASA Astrophysics Data System (ADS)

Soodchomshom, Bumned; Niyomsoot, Kittipong; Pattrawutthiwong, Eakkarat

2018-03-01

The magnetoresistance and spin-valley transport properties in a silicene-based NM/FB/SC junction are investigated, where NM, FB and SC are normal, ferromagnetic and s-wave superconducting silicene, respectively. In the FB region, perpendicular electric and staggered exchange fields are applied. The quasiparticles may be described by Dirac Bogoliubov-de Gennes equation due to Cooper pairs formed by spin-valley massive fermions. The spin-valley conductances are calculated based on the modified Blonder-Tinkham-Klapwijk formalism. We find the spin-valley dependent Andreev resonant peaks in the junction shifted by applying exchange field. Perfect conductance switch generated by interplay of intrinsic spin orbit interaction and superconducting gap has been predicted. Spin and valley polarizations are almost linearly dependent on biased voltage near zero bias and then turn into perfect switch at biased voltage approaching the superconducting gap. The perfect switching of large magnetoresistance has been also predicted at biased energy near the superconducting gap. These switching effects may be due to the presence of spin-valley Andreev resonant peak near the superconducting gap. Our work reveals potential of silicene as applications of electronic switching devices and linear control of spin and valley polarizations.

Simulation of an Electromechanical Spin Motor System of a Control Moment Gyroscope

NASA Technical Reports Server (NTRS)

Inampudi, Ravi; Gordeuk, John

2016-01-01

A two-phase brushless DC motor (BDCM) with pulse-width modulated (PWM) voltage drive is simulated to control the flywheel speed of a control moment gyroscope (CMG). An overview of a double-gimballed control moment gyroscope (DGCMG) assembly is presented along with the CMG torque effects on the spacecraft. The operating principles of a two-phase brushless DC motor are presented and the system's electro-mechanical equations of motion are developed for the root-mean-square (RMS) currents and wheel speed. It is shown that the system is an extremely "stiff" set of first-order equations for which an implicit Euler integrator is required for a stable solution. An adaptive proportional voltage controller is presented which adjusts the PWM voltages depending on several control modes for speed, current, and torque. The simulation results illustrate the interaction between the electrical system and the load dynamics and how these influence the overall performance of the system. As will be shown, the CMG spin motor model can directly provide electrical power use and thermal power output to spacecraft subsystems for effective (average) calculations of CMG power consumption.

Principle and design of small-sized and high-definition x-ray machine

NASA Astrophysics Data System (ADS)

Zhao, Anqing

2010-10-01

The paper discusses the circuit design and working principles of VMOS PWM type 75KV10mA high frequency X-ray machine. The system mainly consists of silicon controlled rectifier, VMOS tube PWM type high-frequency and highvoltage inverter circuit, filament inverter circuit, high-voltage rectifier filter circuit and as X-ray tube. The working process can be carried out under the control of a single-chip microcomputer. Due to the small size and high resolution in imaging, the X-ray machine is mostly adopted for emergent medical diagnosis and specific circumstances where nondestructive tests are conducted.

Investigation of Dielectric Breakdown Characteristics for Double-break Vacuum Interrupter and Dielectric Breakdown Probability Distribution in Vacuum Interrupter

NASA Astrophysics Data System (ADS)

Shioiri, Tetsu; Asari, Naoki; Sato, Junichi; Sasage, Kosuke; Yokokura, Kunio; Homma, Mitsutaka; Suzuki, Katsumi

To investigate the reliability of equipment of vacuum insulation, a study was carried out to clarify breakdown probability distributions in vacuum gap. Further, a double-break vacuum circuit breaker was investigated for breakdown probability distribution. The test results show that the breakdown probability distribution of the vacuum gap can be represented by a Weibull distribution using a location parameter, which shows the voltage that permits a zero breakdown probability. The location parameter obtained from Weibull plot depends on electrode area. The shape parameter obtained from Weibull plot of vacuum gap was 10∼14, and is constant irrespective non-uniform field factor. The breakdown probability distribution after no-load switching can be represented by Weibull distribution using a location parameter. The shape parameter after no-load switching was 6∼8.5, and is constant, irrespective of gap length. This indicates that the scatter of breakdown voltage was increased by no-load switching. If the vacuum circuit breaker uses a double break, breakdown probability at low voltage becomes lower than single-break probability. Although potential distribution is a concern in the double-break vacuum cuicuit breaker, its insulation reliability is better than that of the single-break vacuum interrupter even if the bias of the vacuum interrupter's sharing voltage is taken into account.

A high efficiency PWM CMOS class-D audio power amplifier

NASA Astrophysics Data System (ADS)

Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

2009-02-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

Rail-type gas switch with preionization by an additional corona discharge

NASA Astrophysics Data System (ADS)

Belozerov, O. S.; Krastelev, E. G.

2017-05-01

Results of an experimental research of a rail-type gas switch with preionization by an additional negative corona discharge are presented. The most of measurements were performed for an air insulated two-electrode switch assembled of cylindrical electrodes of 22 mm diameter and 100 mm length, arranged parallel to each other, with a spark gap between them varying from 6 to 15 mm. A set of 1 to 5 needles connected to a negative cylindrical electrode and located aside of them were used for corona discharges. The needle positions, allowing an effecient stabilization of the pulsed breakdown voltage and preventing the a transition of the corona discharge in a spark form, were found. It was shown that the gas preionization by the UV-radiation of the parallel corona discharge provides a stable operation of the switch with low variations of the pulsed breakdown voltage, not exceeding 1% for a given voltage rise-time tested within the range from 40 ns to 5 µs.

Modeling texture transitions in cholesteric liquid crystal droplets

NASA Astrophysics Data System (ADS)

Selinger, Robin; Gimenez-Pinto, Vianney; Lu, Shin-Ying; Selinger, Jonathan; Konya, Andrew

2012-02-01

Cholesteric liquid crystals can be switched reversibly between planar and focal-conic textures, a property enabling their application in bistable displays, liquid crystal writing tablets, e-books, and color switching ``e-skins.'' To explore voltage-pulse induced switching in cholesteric droplets, we perform simulation studies of director dynamics in three dimensions. Electrostatics calculations are solved at each time step using an iterative relaxation method. We demonstrate that as expected, a low amplitude pulse drives the transition from planar to focal conic, while a high amplitude pulse drives the transition from focal conic back to the planar state. We use the model to explore the effects of droplet shape, aspect ratio, and anchoring conditions, with the goal of minimizing both response time and energy consumption.

Electrical motor/generator drive apparatus and method

DOEpatents

Su, Gui Jia

2013-02-12

The present disclosure includes electrical motor/generator drive systems and methods that significantly reduce inverter direct-current (DC) bus ripple currents and thus the volume and cost of a capacitor. The drive methodology is based on a segmented drive system that does not add switches or passive components but involves reconfiguring inverter switches and motor stator winding connections in a way that allows the formation of multiple, independent drive units and the use of simple alternated switching and optimized Pulse Width Modulation (PWM) schemes to eliminate or significantly reduce the capacitor ripple current.

Prognostic health monitoring in switch-mode power supplies with voltage regulation

NASA Technical Reports Server (NTRS)

Hofmeister, James P (Inventor); Judkins, Justin B (Inventor)

2009-01-01

The system includes a current injection device in electrical communication with the switch mode power supply. The current injection device is positioned to alter the initial, non-zero load current when activated. A prognostic control is in communication with the current injection device, controlling activation of the current injection device. A frequency detector is positioned to receive an output signal from the switch mode power supply and is able to count cycles in a sinusoidal wave within the output signal. An output device is in communication with the frequency detector. The output device outputs a result of the counted cycles, which are indicative of damage to an a remaining useful life of the switch mode power supply.

Analysis of spacecraft battery charger systems

NASA Astrophysics Data System (ADS)

Kim, Seong J.; Cho, Bo H.

In spacecraft battery charger systems, switching regulators are widely used for bus voltage regulation, charge current regulation, and peak power tracking. Small-signal dynamic characteristics of the battery charging subsystem of direct energy transfer (DET) and peak power tracking (PPT) systems are analyzed to facilitate design of the control loop for optimum performance and stability. Control loop designs of the charger in various modes of operation are discussed. Analyses are verified through simulations. It is shown that when the charger operates in the bus voltage regulation mode, the control-to-voltage transfer function has a negative DC gain and two LHP zeros in both the DET and PPT systems. The control-to-inductor current transfer function also has a negative DC gain and a RHP zero. Thus, in the current-mode control, the current loop can no longer be used to stabilize the system. When the system operates in the charge current regulation mode, the charger operates with a fixed duty cycle which is determined by the regulated bus voltage and the battery voltage. Without an input filter, the converter becomes a first-order system. When the peak power tracker is inactive, the operating point of the solar array output moves to the voltage source region. Thus, the solar array behaves as a stiff voltage source to a constant power load.

The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

NASA Astrophysics Data System (ADS)

Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

2018-03-01

We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Ghosh, R.; Liu, Y.; Lopez, R.

2011-12-01

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E˜6.5×107Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2016-08-01

A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and the resistance value of the low-resistance state (LRS) on the reset-switching transitions are strong. For a low LRS with a large conducting path, the sharp reset switching, which requires a high reset power (>7 mW), was observed, whereas for a high LRS with small multiple-conducting paths, the step-by-step reset switching with a low reset power (<7 mW) was observed. The attainment of higher nonlinear current-voltage ( I-V) characteristics in terms of the step-by-step reset switching is due to the steep current-increased region of the trap-controlled space charge-limited current (SCLC) model. A multilevel cell (MLC) operation, for which the reset stop voltage ( V STOP) is used in the DC sweep mode and an incremental amplitude is used in the pulse mode for the step-by-step reset switching, is demonstrated here. The results of the present study suggest that well-controlled conducting paths in a SiN-based RRAM device, which are not too strong and not too weak, offer considerable potential for the realization of low-power and high-density crossbar-array applications.

Prediction of Trace Element based Energizing Sensor Control System using PWM

NASA Astrophysics Data System (ADS)

Zukri, Mohammad Nizar Bin Mohamed; Abu Bakar, Elmi Bin; Uchiyama, Naoki; Abdullah, Mohamad Nazir Bin

2018-05-01

A real-time system for field-work monitoring wastewater laden with heavy metal in industrial discharge through wireless communication network was developed. The monitoring system poses an interesting challenge in order to determine existing metal ion in the solution whereas the previous result only consider total dissolve ion. This paper aims to distinguish the metal ion based on reaction determination in solution. The control algorithm was implemented as generating voltage input for energize conductivity sensor since the voltage corresponding to oxidation and reaction based on standard reduction potential. Implementation of ATmega2560 microcontroller for control voltage fed on sensor equivalent to controlling the PWM duty cycle. PID controller was designed uses a microcontroller (Arduino) platform with manual tuning for identify reaction process and sufficient voltage input. From the experimental result, is found that the proposed PI controller has excellent tracking and measurement performance. Low-pass filter was applied in programming to make the system understand that signal has achieved stable. The development of hardware and software of the closed loop system has an enhancement of measurement performance and high feasibility for SME’s company in economic point of view. The desired objective is to achieve a system with the stable measurement and sufficient voltage supply. This system will provide an accurate and precise control efficiently without using costly component and complicated circuit.

Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy.

PubMed

Zhao, Shishun; Wang, Lei; Zhou, Ziyao; Li, Chunlei; Dong, Guohua; Zhang, Le; Peng, Bin; Min, Tai; Hu, Zhongqiang; Ma, Jing; Ren, Wei; Ye, Zuo-Guang; Chen, Wei; Yu, Pu; Nan, Ce-Wen; Liu, Ming

2018-05-29

Electric field (E-field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy-efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin-reorientation transition (SRT) that allows the magnetic moment rotating between the out-of-plane and the in-plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME] + [TFSI] - /Pt/(Co/Pt) 2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V -1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out-of-plane and in-plane directions via IL gating. The key mechanism, revealed by the first-principles calculation, is that the IL gating process influences the interfacial spin-orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in-plane/out-of-plane magnetization switching. This work demonstrates a unique IL-gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conducting-insulating transition in adiabatic memristive networks

NASA Astrophysics Data System (ADS)

Sheldon, Forrest C.; Di Ventra, Massimiliano

2017-01-01

The development of neuromorphic systems based on memristive elements—resistors with memory—requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a discontinuous transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON-OFF ratio. We investigate the consequences of this transition for the memristive current-voltage characteristics both through simulation and theory, and demonstrate the role of current-voltage duality in relating forward and reverse switching processes. Our work sheds considerable light on the statistical properties of memristive networks that are presently studied both for unconventional computing and as models of neural networks.

Contact effects in light activated GaAs switches

NASA Astrophysics Data System (ADS)

Durkin, P. S.

1985-05-01

The purpose of this work was to examine the effects of various types of contacts on the switching behavior of a light-triggered power switch. The switch was constructed from a homogeneous wafer of chromium-doped gallium arsenide; the contacts were either ohmic, non-ohmic, or Schottky barriers. These were formed on the wafer in two geometries; both contacts on one side, and one contact spacings were used to permit the effects of the location of the existing laser pulse to be studied. A high voltage power supply (zero to 20 kV) was employed as the bias supply. A Nd:YAG laser, in the pulsed mode, was used to trigger the switch, which was mounted on a cold finger cooled to near liquid nitrogen temperature. Cooling reduced the dark current to manageable values (less than 1 micro A), and also reduced the avalanche breakdown voltage. The results of the measurements indicate that ohmic contacts produced more reliable switching than the non-ohmic or Schottky contacts, in as much as the shape of the output current pulse was better, and the number of pulses which the switches could sustain before the pulse shape deteriorated was greater, for the ohmic contacts. Surface discharge between the one-sided contacts obscured any differences in switching characteristics which might have depended on the location of the pulsed light excitation, so that no correlation between position and behavior could be obtained.

Population Switching and Charge Sensing in Quantum Dots: A Case for a Quantum Phase Transition

NASA Astrophysics Data System (ADS)

Goldstein, Moshe; Berkovits, Richard; Gefen, Yuval

2010-06-01

A broad and a narrow level of a quantum dot connected to two external leads may swap their respective occupancies as a function of an external gate voltage. By mapping this problem onto a multiflavored Coulomb gas we show that such population switching is not abrupt. However, trying to measure it by adding a third electrostatically coupled lead may render this switching an abrupt first order quantum phase transition. This is related to the interplay of the Mahan mechanism versus the Anderson orthogonality catastrophe, in similitude to the Fermi edge singularity. A concrete setup for experimental observation of this effect is also suggested.

Bipolar pulse forming line

DOEpatents

Rhodes, Mark A.

2008-10-21

A bipolar pulse forming transmission line module for linear induction accelerators having first, second, third, fourth, and fifth planar conductors which form an interleaved stack with dielectric layers between the conductors. Each conductor has a first end, and a second end adjacent an acceleration axis. The first and second planar conductors are connected to each other at the second ends, the fourth and fifth planar conductors are connected to each other at the second ends, and the first and fifth planar conductors are connected to each other at the first ends via a shorting plate adjacent the first ends. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short a high voltage from the first end of the third planar conductor to the first end of the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

A dual slope charge sampling analog front-end for a wireless neural recording system.

PubMed

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit; Ghovanloo, Maysam

2014-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-μm CMOS process, occupying 2.4 × 2.1 mm(2) and consuming 255 μW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 μV(rms) in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 μW.

A Dual Slope Charge Sampling Analog Front-End for a Wireless Neural Recording System

PubMed Central

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit

2015-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-µm CMOS process, occupying 2.4 × 2.1 mm2 and consuming 255 µW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 µVrms in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 µW. PMID:25570655

Studies of ZVS soft switching of dual-active-bridge isolated bidirectional DC-DC converters

NASA Astrophysics Data System (ADS)

Xu, Fei; Zhao, Feng; Shi, Qibiao; Wen, Xuhui

2018-05-01

To operate dual-active-bridge isolated bidirectional dc- dc converter (DAB) at high efficiency, the two bridge switches must operate with Zero-Voltage-Switching (ZVS) over as wide an operating range as possible. This paper proposes a new perspective on realizing ZVS in dead-time. An exact theoretical analysis and mathematical mode is built to explain the process of ZVS switching in dead-time under Single Phase Shift (SPS) control strategy. In order to assure the two bridge switches operate on soft switching, every SPS switching point is analyzed. Generally, dead-time will be determined when the power electronic devices is selected. The key factor to realizing ZVS is the size of the end time of resonance comparing to dead-time. Through detailed analysis, it can obtain the conditions of all switches achieving ZVS turn-on and turn-off. Finally, simulation validates the theoretical analysis and some advice are given to realize the ZVS soft switching.

Reactive power compensator

DOEpatents

El-Sharkawi, Mohamed A.; Venkata, Subrahmanyam S.; Chen, Mingliang; Andexler, George; Huang, Tony

1992-01-01

A system and method for determining and providing reactive power compensation for an inductive load. A reactive power compensator (50,50') monitors the voltage and current flowing through each of three distribution lines (52a, 52b, 52c), which are supplying three-phase power to one or more inductive loads. Using signals indicative of the current on each of these lines when the voltage waveform on the line crosses zero, the reactive power compensator determines a reactive power compensator capacitance that must be connected to the lines to maintain a desired VAR level, power factor, or line voltage. Alternatively, an operator can manually select a specific capacitance for connection to each line, or the capacitance can be selected based on a time schedule. The reactive power compensator produces control signals, which are coupled through optical fibers (102/106) to a switch driver (110, 110') to select specific compensation capacitors (112) for connections to each line. The switch driver develops triggering signals that are supplied to a plurality of series-connected solid state switches (350), which control charge current in one direction in respect to ground for each compensation capacitor. During each cycle, current flows from ground to charge the capacitors as the voltage on the line begins to go negative from its positive peak value. The triggering signals are applied to gate the solid state switches into a conducting state when the potential on the lines and on the capacitors reaches a negative peak value, thereby minimizing both the potential difference and across the charge current through the switches when they begin to conduct. Any harmonic distortion on the potential and current carried by the lines is filtered out from the current and potential signals used by the reactive power compensator so that it does not affect the determination of the required reactive compensation.

Reactive Power Compensator.

DOEpatents

El-Sharkawi, M.A.; Venkata, S.S.; Chen, M.; Andexler, G.; Huang, T.

1992-07-28

A system and method for determining and providing reactive power compensation for an inductive load. A reactive power compensator (50,50') monitors the voltage and current flowing through each of three distribution lines (52a, 52b, 52c), which are supplying three-phase power to one or more inductive loads. Using signals indicative of the current on each of these lines when the voltage waveform on the line crosses zero, the reactive power compensator determines a reactive power compensator capacitance that must be connected to the lines to maintain a desired VAR level, power factor, or line voltage. Alternatively, an operator can manually select a specific capacitance for connection to each line, or the capacitance can be selected based on a time schedule. The reactive power compensator produces control signals, which are coupled through optical fibers (102/106) to a switch driver (110, 110') to select specific compensation capacitors (112) for connections to each line. The switch driver develops triggering signals that are supplied to a plurality of series-connected solid state switches (350), which control charge current in one direction in respect to ground for each compensation capacitor. During each cycle, current flows from ground to charge the capacitors as the voltage on the line begins to go negative from its positive peak value. The triggering signals are applied to gate the solid state switches into a conducting state when the potential on the lines and on the capacitors reaches a negative peak value, thereby minimizing both the potential difference and across the charge current through the switches when they begin to conduct. Any harmonic distortion on the potential and current carried by the lines is filtered out from the current and potential signals used by the reactive power compensator so that it does not affect the determination of the required reactive compensation. 26 figs.

Improving dynamic performances of PWM-driven servo-pneumatic systems via a novel pneumatic circuit.

PubMed

Taghizadeh, Mostafa; Ghaffari, Ali; Najafi, Farid

2009-10-01

In this paper, the effect of pneumatic circuit design on the input-output behavior of PWM-driven servo-pneumatic systems is investigated and their control performances are improved using linear controllers instead of complex and costly nonlinear ones. Generally, servo-pneumatic systems are well known for their nonlinear behavior. However, PWM-driven servo-pneumatic systems have the advantage of flexibility in the design of pneumatic circuits which affects the input-output linearity of the whole system. A simple pneumatic circuit with only one fast switching valve is designed which leads to a quasi-linear input-output relation. The quasi-linear behavior of the proposed circuit is verified both experimentally and by simulations. Closed loop position control experiments are then carried out using linear P- and PD-controllers. Since the output position is noisy and cannot be directly differentiated, a Kalman filter is designed to estimate the velocity of the cylinder. Highly improved tracking performances are obtained using these linear controllers, compared to previous works with nonlinear controllers.

System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

NASA Technical Reports Server (NTRS)

Lipo, Thomas A.; Alan, Irfan

1991-01-01

Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the addition of extra energy storage elements to the HF link are described. The importance of the source voltage level to achieve a better current regulation for the source side PDMC is also briefly discussed. The power levels achieved in the motoring mode of operation show that the proposed power levels achieved in the generating mode of operation can also be easily achieved provided that no mechanical speed limitation were present to drive the induction machine at the proposed power level.

Zero-bias microwave detectors based on array of nanorectifiers coupled with a dipole antenna

NASA Astrophysics Data System (ADS)

Kasjoo, Shahrir R.; Singh, Arun K.; Mat Isa, Siti S.; Ramli, Muhammad M.; Mohamad Isa, Muammar; Ahmad, Norhawati; Mohd Nor, Nurul I.; Khalid, Nazuhusna; Song, Ai Min

2016-04-01

We report on zero-bias microwave detection using a large array of unipolar nanodevices, known as the self-switching diodes (SSDs). The large array was realized in a single lithography step without the need of interconnection layers, hence allowing for a simple and low-cost fabrication process. The SSD array was coupled with a narrowband dipole antenna with a resonant frequency of 890 MHz, to form a simple rectenna (rectifying antenna). The extrinsic voltage responsivity and noise-equivalent-power (NEP) of the rectenna were ∼70 V/W and ∼0.18 nW/Hz1/2, respectively, measured in the far-field region at unbiased condition. Nevertheless, the estimated intrinsic voltage responsivity can achieve up to ∼5 kV/W with NEP of ∼2.6 pW/Hz1/2.

Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishakov, K. S., E-mail: ksgrishakov@yahoo.com; Elesin, V. F.

A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the applicationmore » of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.« less

Novel Material Integration for Reliable and Energy-Efficient NEM Relay Technology

NASA Astrophysics Data System (ADS)

Chen, I.-Ru

Energy-efficient switching devices have become ever more important with the emergence of ubiquitous computing. NEM relays are promising to complement CMOS transistors as circuit building blocks for future ultra-low-power information processing, and as such have recently attracted significant attention from the semiconductor industry and researchers. Relay technology potentially can overcome the energy efficiency limit for conventional CMOS technology due to several key characteristics, including zero OFF-state leakage, abrupt switching behavior, and potentially very low active energy consumption. However, two key issues must be addressed for relay technology to reach its full potential: surface oxide formation at the contacting surfaces leading to increased ON-state resistance after switching, and high switching voltages due to strain gradient present within the relay structure. This dissertation advances NEM relay technology by investigating solutions to both of these pressing issues. Ruthenium, whose native oxide is conductive, is proposed as the contacting material to improve relay ON-state resistance stability. Ruthenium-contact relays are fabricated after overcoming several process integration challenges, and show superior ON-state resistance stability in electrical measurements and extended device lifetime. The relay structural film is optimized via stress matching among all layers within the structure, to provide lower strain gradient (below 10E-3/microm -1) and hence lower switching voltage. These advancements in relay technology, along with the integration of a metallic interconnect layer, enable complex relay-based circuit demonstration. In addition to the experimental efforts, this dissertation theoretically analyzes the energy efficiency limit of a NEM switch, which is generally believed to be limited by the surface adhesion energy. New compact (<1 microm2 footprint), low-voltage (<0.1 V) switch designs are proposed to overcome this limit. The results pave a pathway to scaled energy-efficient electronic device technology.

Control Systems with Pulse Width Modulation in Matrix Converters

NASA Astrophysics Data System (ADS)

Bondarev, A. V.; Fedorov, S. V.; Muravyova, E. A.

2018-03-01

In this article, the matrix frequency converter for the system of the frequency control of the electric drive is considered. Algorithms of formation of an output signal on the basis of pulse width modulation were developed for the quantitative analysis of quality of an output signal on the basis of mathematical models. On the basis of simulation models of an output signal, assessment of quality of this signal was carried out. The analysis of harmonic composition of the voltage output received on the basis of pulse width modulation was made for the purpose of determination of opportunities of the control system for improving harmonic composition. The result of such analysis led to the fact that the device formation of switching functions of the control system on the basis of PWM does not lead to a distortion reduction of a harmonic of the control signal, and leads to offset of harmonic in the field of frequencies, the multiple relatively carrier frequency.

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

PubMed

He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

2017-08-30

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

Unravelling the switching mechanisms in electric field induced insulator-metal transitions in VO2 nanobeams

NASA Astrophysics Data System (ADS)

Rathi, Servin; Park, Jin-Hyung; Lee, In-yeal; Baik, Jeong Min; Yi, Kyung Soo; Kim, Gil-Ho

2014-07-01

We studied insulator-metal transitions in VO2 nanobeams for both abrupt and gradual changes in applied electric fields. Based on the observations, the Poole-Frenkel effect explained the abrupt transition, while the gradual case is found to be dominated by the Joule heating phenomenon. We also carried out power model and finite element method based simulations which supported the Joule heating phenomena for gradual transition. An in-principle demonstration of the Poole-Frenkel effect, performed using a square voltage pulse of 1 µs duration, further confirms the proposed insulator-metal transition mechanism with a switching time in the order of 100 ns. Finally, conductivity variations introduced via rapid thermal annealing at various temperatures validate the roles of both Joule heating and Poole-Frenkel mechanisms in the transitions.

Low power ovonic threshold switching characteristics of thin GeTe{sub 6} films using conductive atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manivannan, Anbarasu, E-mail: anbarasu@iiti.ac.in, E-mail: ranjith@iith.ac.in; Sahu, Smriti; Myana, Santosh Kumar

2014-12-15

Minimizing the dimensions of the electrode could directly impact the energy-efficient threshold switching and programming characteristics of phase change memory devices. A ∼12–15 nm AFM probe-tip was employed as one of the electrodes for a systematic study of threshold switching of as-deposited amorphous GeTe{sub 6} thin films. This configuration enables low power threshold switching with an extremely low steady state current in the on state of 6–8 nA. Analysis of over 48 different probe locations on the sample reveals a stable Ovonic threshold switching behavior at threshold voltage, V{sub TH} of 2.4 ± 0.5 V and the off state was retained below a holding voltage,more » V{sub H} of 0.6 ± 0.1 V. All these probe locations exhibit repeatable on-off transitions for more than 175 pulses at each location. Furthermore, by utilizing longer biasing voltages while scanning, a plausible nano-scale control over the phase change behavior from as-deposited amorphous to crystalline phase was studied.« less

Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory.

PubMed

Ye, Yalong; Zhao, Jie; Xiao, Li; Cheng, Baochang; Xiao, Yanhe; Lei, Shuijin

2018-06-06

Hybrid nanostructures can show enormous potential in different areas because of their unique structural configurations. Herein, Fe@Al 2 O 3 hybrid nanotubes are constructed via a homogeneous coprecipitation method followed by subsequent annealing in a reducing atmosphere. The introduction of zero band gap Fe nanocrystals in the wall of ultrawide band gap Al 2 O 3 insulator nanotubes results in the formation of charge trap centers, and correspondingly a single hybrid nanotube-based two-terminal device can show reversible negative resistive switching (RS) characteristics with symmetrical negative differential resistance (NDR) at relatively high operation bias voltages. At a large bias voltage, holes and electrons can be injected into traps at two ends from electrodes, respectively, and then captured. The bias voltage dependence of asymmetrical filling of charges can lead to a reversible variation of built-in electromotive force, and therefore the symmetrical negative RS with NDR arises from two reversible back-to-back series bipolar RS. At a low readout voltage, the single Fe@Al 2 O 3 hybrid nanotube can show an excellent nonvolatile memory feature with a relatively large switching ratio of ∼30. The bias-governed reversible negative RS with superior stability, reversibility, nondestructive readout, and remarkable cycle performance makes it a potential candidate in next-generation erasable nonvolatile resistive random access memories.

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

NASA Astrophysics Data System (ADS)

Shen, Jian Qi; Gu, Jing

2018-04-01

Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level Λ-configuration model { |0> ,|1> ,|2> } , i.e., the ground state of the molecule is the lower level |0> and the highly degenerate electronic states in the two quantum dots are the two upper levels |1> ,|2> . The electromagnetic characteristics due to the |0>-|1> transition can be controllably manipulated by a tunable gate voltage (control field) that drives the |2>-|1> transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., |0>-|1> two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

NASA Astrophysics Data System (ADS)

Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

2013-01-01

The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering

NASA Astrophysics Data System (ADS)

Lee, Tae Sung; Lee, Nam Joo; Abbas, Haider; Hu, Quanli; Yoon, Tae-Sik; Lee, Hyun Ho; Le Shim, Ee; Kang, Chi Jung

2018-01-01

The resistive random access memory (RRAM) devices with heterostuctures have been investigated due to cycling stability, nonlinear switching, complementary resistive switching and self-compliance. The heterostructured devices can modulate the resistive switching (RS) behavior appropriately by bilayer structure with a variety of materials. In this study, the bipolar resistive switching characteristics of the bilayer structures composed of Ta2O5 and Ag2Se, which are transition-metal oxide (TMO) and silver chalcogenide, were investigated. The bilayer devices of Ta2O5 deposited on Ag2Se (Ta2O5/Ag2Se) and Ag2Se deposited on Ta2O5 (Ag2Se/Ta2O5) were fabricated for investigation of the RS characteristics by stacking sequence of Ta2O5 and Ag2Se. All operating voltages were applied to the Ag top electrode with the Pt bottom electrode grounded. The Ta2O5/Ag2Se device showed that a negative voltage sweep switched the device from high resistance state (HRS) to low resistance state (LRS) and a positive voltage sweep switched the device from LRS to HRS. On the contrary, for the Ag2Se/Ta2O5 device a positive voltage sweep switched the device from HRS to LRS, and a negative voltage sweep switched it from LRS to HRS. The polarity dependence of RS was attributed to the stacking sequence of Ta2O5 and Ag2Se. In addition, the combined heterostructured device of both bilayer stacks, Ta2O5/Ag2Se and Ag2Se/Ta2O5, exhibited the complementary switching characteristics. By using threshold switching devices, sneak path leakage can be reduced without additional selectors. The bilayer heterostructures of Ta2O5 and Ag2Se have various advantages such as self-compliance, reproducibility and forming-free stable RS. It confirms the possible applications of TMO and silver chalcogenide heterostructures in RRAM.

Production of atmospheric-pressure glow discharge in nitrogen using needle-array electrode

NASA Astrophysics Data System (ADS)

Takaki, K.; Hosokawa, M.; Sasaki, T.; Mukaigawa, S.; Fujiwara, T.

2005-04-01

An atmospheric pressure glow discharge was generated using a needle-array electrode in nitrogen, and the voltage-current characteristics of the glow discharge were obtained in a range from 1 mA to 60 A. A pulsed high voltage with short rise time under 10 ns was employed to generate streamer discharges simultaneously at all needle tips. The large number of streamer discharges prevented the glow-to-arc transition caused by inhomogeneous thermalization. Semiconductor opening switch diodes were employed as an opening switch to shorten the rise time. The glow voltage was almost constant until the discharge current became 0.3 A, whereas the voltage increased with the current higher than 0.3 A. Electron density and temperature in a positive column of the glow discharge at 60 A were obtained to 1.4×1012cm-3 and 1.3 eV from calculation based on nitrogen swarm data.

Low loss millimeter-wave switches based on the Vanadium Dioxide Metal - Insulator - Transition

NASA Astrophysics Data System (ADS)

Field, Mark; Hillman, Christopher; Stupar, Philip; Griffith, Zachary; Rodwell, Mark

2014-03-01

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF / ZON, is greater than 500:1 at 50 GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

Superconductivity in two-dimensional NbSe2 field effect transistors

NASA Astrophysics Data System (ADS)

El-Bana, Mohammed S.; Wolverson, Daniel; Russo, Saverio; Balakrishnan, Geetha; Mck Paul, Don; Bending, Simon J.

2013-12-01

We describe investigations of superconductivity in few molecular layer NbSe2 field effect transistors. While devices fabricated from NbSe2 flakes less than eight molecular layers thick did not conduct, thicker flakes were superconducting with an onset Tc that was only slightly depressed from the bulk value for 2H-NbSe2 (7.2 K). The resistance typically showed a small, sharp high temperature transition followed by one or more broader transitions which usually ended in a wide tail to zero resistance at low temperatures. We speculate that these multiple resistive transitions are related to disorder in the layer stacking. The behavior of several flakes has been characterized as a function of temperature, applied field and back-gate voltage. We find that the conductance in the normal state and transition temperature depend weakly on the gate voltage, with both conductivity and Tc decreasing as the electron concentration is increased. The application of a perpendicular magnetic field allows the evolution of different resistive transitions to be tracked and values of the zero temperature upper critical field, Hc2(0), and coherence length, ξ(0), to be independently estimated. Our results are analyzed in terms of available theories for these phenomena.

Development of compact rapid charging power supply for capacitive energy storage in pulsed power drivers.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2015-02-01

High energy capacitor bank is used for primary electrical energy storage in pulsed power drivers. The capacitors used in these pulsed power drivers have low inductance, low internal resistance, and less dc life, so it has to be charged rapidly and immediately discharged into the load. A series resonant converter based 45 kV compact power supply is designed and developed for rapid charging of the capacitor bank with constant charging current up to 150 mA. It is short circuit proof, and zero current switching technique is used to commute the semiconductor switch. A high frequency resonant inverter switching at 10 kHz makes the overall size small and reduces the switching losses. The output current of the power supply is limited by constant on-time and variable frequency switching control technique. The power supply is tested by charging the 45 kV/1.67 μF and 15 kV/356 μF capacitor banks. It has charged the capacitor bank up to rated voltage with maximum charging current of 150 mA and the average charging rate of 3.4 kJ/s. The output current of the power supply is limited by reducing the switching frequency at 5 kHz, 3.3 kHz, and 1.7 kHz and tested with 45 kV/1.67 μF capacitor bank. The protection circuit is included in the power supply for over current, under voltage, and over temperature. The design details and the experimental testing results of the power supply for resonant current, output current, and voltage traces of the power supply with capacitive, resistive, and short circuited load are presented and discussed.

Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films.

PubMed

Baturina, T I; Mironov, A Yu; Vinokur, V M; Baklanov, M R; Strunk, C

2007-12-21

We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between superconducting and insulating phases, evidencing a direct superconductor-insulator transition without an intermediate metallic phase. At moderate temperatures, in the insulating films we reveal thermally activated conductivity with the magnetic field-dependent activation energy. At very low temperatures, we observe a zero-conductivity state, which is destroyed at some depinning threshold voltage V{T}. These findings indicate the formation of a distinct collective state of the localized Cooper pairs in the critical region at both sides of the transition.

[Invert transformer design for high frequency X-ray machine based on PWM controller SG 3525].

PubMed

Yu, Xue-fei; Li, Zhe

2005-07-01

This paper introduces the principle of invert transformer of high frequency X-ray machine, and analyzes its main constitution. Meanwhile, a scheme based on SG3525 for closed loop voltage regulation is given. The experimental result testifies its efficiency and utility.

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Bromstead, James; Weir, Bennett; Nelms, R. Mark; Johnson, R. Wayne; Askew, Ray

1994-01-01

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Analysis of series resonant converter with series-parallel connection

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren; Huang, Chien-Lan

2011-02-01

In this study, a parallel inductor-inductor-capacitor (LLC) resonant converter series-connected on the primary side and parallel-connected on the secondary side is presented for server power supply systems. Based on series resonant behaviour, the power metal-oxide-semiconductor field-effect transistors are turned on at zero voltage switching and the rectifier diodes are turned off at zero current switching. Thus, the switching losses on the power semiconductors are reduced. In the proposed converter, the primary windings of the two LLC converters are connected in series. Thus, the two converters have the same primary currents to ensure that they can supply the balance load current. On the output side, two LLC converters are connected in parallel to share the load current and to reduce the current stress on the secondary windings and the rectifier diodes. In this article, the principle of operation, steady-state analysis and design considerations of the proposed converter are provided and discussed. Experiments with a laboratory prototype with a 24 V/21 A output for server power supply were performed to verify the effectiveness of the proposed converter.

A new balancing three level three dimensional space vector modulation strategy for three level neutral point clamped four leg inverter based shunt active power filter controlling by nonlinear back stepping controllers.

PubMed

Chebabhi, Ali; Fellah, Mohammed Karim; Kessal, Abdelhalim; Benkhoris, Mohamed F

2016-07-01

In this paper is proposed a new balancing three-level three dimensional space vector modulation (B3L-3DSVM) strategy which uses a redundant voltage vectors to realize precise control and high-performance for a three phase three-level four-leg neutral point clamped (NPC) inverter based Shunt Active Power Filter (SAPF) for eliminate the source currents harmonics, reduce the magnitude of neutral wire current (eliminate the zero-sequence current produced by single-phase nonlinear loads), and to compensate the reactive power in the three-phase four-wire electrical networks. This strategy is proposed in order to gate switching pulses generation, dc bus voltage capacitors balancing (conserve equal voltage of the two dc bus capacitors), and to switching frequency reduced and fixed of inverter switches in same times. A Nonlinear Back Stepping Controllers (NBSC) are used for regulated the dc bus voltage capacitors and the SAPF injected currents to robustness, stabilizing the system and to improve the response and to eliminate the overshoot and undershoot of traditional PI (Proportional-Integral). Conventional three-level three dimensional space vector modulation (C3L-3DSVM) and B3L-3DSVM are calculated and compared in terms of error between the two dc bus voltage capacitors, SAPF output voltages and THDv, THDi of source currents, magnitude of source neutral wire current, and the reactive power compensation under unbalanced single phase nonlinear loads. The success, robustness, and the effectiveness of the proposed control strategies are demonstrated through simulation using Sim Power Systems and S-Function of MATLAB/SIMULINK. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3

NASA Astrophysics Data System (ADS)

Yao, Lide; Inkinen, Sampo; van Dijken, Sebastiaan

2017-02-01

Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-time impact on resistance changes. Here we use in situ transmission electron microscopy to demonstrate reversible switching between three resistance states in epitaxial La2/3Sr1/3MnO3 films. Simultaneous high-resolution imaging and resistance probing indicate that the switching events are caused by the formation of uniform structural phases. Reversible horizontal migration of oxygen vacancies within the manganite film, driven by combined effects of Joule heating and bias voltage, predominantly triggers the structural and resistive transitions. Our findings open prospects for ionotronic devices based on dynamic control of physical properties in complex oxide nanostructures.

Adjustable speed drive study, part 1

NASA Astrophysics Data System (ADS)

Wallace, A.

1989-08-01

Advances in speed control for motors in recent years, notably those in power electronics, have widened the range of application for several adjustable speed drive (ASD) types to include the smaller horsepower sizes. The dc motor drive, formerly in almost universal use for speed control, is being challenged by the high efficiency induction motor/pulse width modulation (PWM) drive; and for special small horsepower size applications, by the permanent magnet motor/PWM inverter drive or by the switched reluctance motor drive. The main characteristics of the several ASD types suitable for small horsepower size applications are discussed, as well as their unwanted side effects: poor power factor, harmonic distortion of the supply, acoustic noise, and electromagnetic interference. A procedure is recommended for determining which, if any, ASD to use.

Position control of an electro-pneumatic system based on PWM technique and FLC.

PubMed

Najjari, Behrouz; Barakati, S Masoud; Mohammadi, Ali; Futohi, Muhammad J; Bostanian, Muhammad

2014-03-01

In this paper, modeling and PWM based control of an electro-pneumatic system, including the four 2-2 valves and a double acting cylinder are studied. Dynamic nonlinear behavior of the system, containing fast switching solenoid valves and a pneumatic cylinder, as well as electrical, magnetic, mechanical, and fluid subsystems are modeled. A DC-DC power converter is employed to improve solenoid valve performance and suppress system delay. Among different position control methods, a proportional integrator derivative (PID) controller and fuzzy logic controller (FLC) are evaluated. An experimental setup, using an AVR microcontroller is implemented. Simulation and experimental results verify the effectiveness of the proposed control strategies. Copyright © 2014 ISA. Published by Elsevier Ltd. All rights reserved.

The Voltage Distribution Characteristics of a Hybrid Circuit Breaker During High Current Interruption

NASA Astrophysics Data System (ADS)

Cheng, Xian; Duan, Xiongying; Liao, Minfu; Huang, Zhihui; Luo, Yan; Zou, Jiyan

2013-08-01

Hybrid circuit breaker (HCB) technology based on a vacuum interrupter and a SF6 interrupter in series has become a new research direction because of the low-carbon requirements for high voltage switches. The vacuum interrupter has an excellent ability to deal with the steep rising part of the transient recovery voltage (TRV), while the SF6 interrupter can withstand the peak part of the voltage easily. An HCB can take advantage of the interrupters in the current interruption process. In this study, an HCB model based on the vacuum ion diffusion equations, ion density equation, and modified Cassie-Mayr arc equation is explored. A simulation platform is constructed by using a set of software called the alternative transient program (ATP). An HCB prototype is also designed, and the short circuit current is interrupted by the HCB under different action sequences of contacts. The voltage distribution of the HCB is analyzed through simulations and tests. The results demonstrate that if the vacuum interrupter withstands the initial TRV and interrupts the post-arc current first, then the recovery speed of the dielectric strength of the SF6 interrupter will be fast. The voltage distribution between two interrupters is determined by their post-arc resistance, which happens after current-zero, and subsequently, it is determined by the capacitive impedance after the post-arc current decays to zero.

Inverting Quasi-Resonant Switched-Capacitor Bidirectional Converter and Its Application to Battery Equalization

NASA Astrophysics Data System (ADS)

Lee, Yuang-Shung; Chiu, Yin-Yuan; Cheng, Ming-Wang; Ko, Yi-Pin; Hsiao, Sung-Hsin

The proposed quasi-resonant (QR) zero current switching (ZCS) switched-capacitor (SC) converter is a new type of bidirectional power flow control conversion scheme. The proposed converter is able to provide voltage conversion ratios from -3/-{1 \\over 3} (triple-mode/trisection-mode) to -n/-{1 \\over n} (-n-mode/-{1 \\over n}-mode) by adding a different number of switched-capacitors and power MOSFET switches with a small series connected resonant inductor for forward and reverse power flow control schemes. It possesses the advantages of low switching losses and current stress in this QR ZCS SC converter. The principle of operation, theoretical analysis of the proposed triple-mode/trisection-mode bidirectional power conversion scheme is described in detail with circuit model analysis. Simulation and experimental studies are carried out to verify the performance of the proposed inverting type ZCS SC QR bidirectional converter. The proposed converters can be applied to battery equalization for battery management system (BMS).

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

NASA Astrophysics Data System (ADS)

Xia, Peng; Li, Luman; Wang, Pengfei; Gan, Ying; Xu, Wei

2017-11-01

A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin

2016-05-01

The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00505e

Current-voltage scaling of a Josephson-junction array at irrational frustration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granato, E.

1996-10-01

Numerical simulations of the current-voltage characteristics of an ordered two-dimensional Josephson-junction array at an irrational flux quantum per plaquette are presented. The results are consistent with a scaling analysis that assumes a zero-temperature vortex-glass transition. The thermal-correlation length exponent characterizing this transition is found to be significantly different from the corresponding value for vortex-glass models in disordered two-dimensional superconductors. This leads to a current scale where nonlinearities appear in the current-voltage characteristics decreasing with temperature {ital T} roughly as {ital T}{sup 2} in contrast with the {ital T}{sup 3} behavior expected for disordered models. {copyright} {ital 1996 The American Physicalmore » Society.}« less

Core losses of an inverter-fed permanent magnet synchronous motor with an amorphous stator core under no-load

NASA Astrophysics Data System (ADS)

Denis, Nicolas; Kato, Yoshiyuki; Ieki, Masaharu; Fujisaki, Keisuke

2016-05-01

In this paper, an interior permanent magnet synchronous motor (IPMSM) with a stator core made of amorphous magnetic material (AMM) is presented. The IPMSM is driven by a voltage source three-phase inverter with classical pulse width modulation (PWM) control. The core losses under no-load condition are measured by experiment and compared to an equivalent IPMSM with a stator core made of NO steel. Under these conditions, the core losses are influenced by the stator, rotor and magnet shapes but also by the PWM carrier signal that implies a high frequency harmonic in the magnetic flux density. It is demonstrated that the AMM can reduce the core losses by about 56 %.

A Compact, Soft-Switching DC-DC Converter for Electric Propulsion

NASA Technical Reports Server (NTRS)

Button, Robert; Redilla, Jack; Ayyanar, Raja

2003-01-01

A hybrid, soft-switching, DC-DC converter has been developed with superior soft switching characteristics, high efficiency, and low electro-magnetic interference. This hybrid topology is comprised of an uncontrolled bridge operating at full pulse-width, and a controlled section operating as a conventional phase modulated converter. The unique topology is able to maintain zero voltage switching down to no load operating conditions. A breadboard prototype was developed and tested to demonstrate the benefits of the topology. Improvements were then made to reduce the size of passive components and increase efficiency in preparation for packaging. A packaged prototype was then designed and built, and several innovative packaging techniques are presented. Performance test data is presented that reveals deficiencies in the design of the power transformer. A simple redesign of the transformer windings eliminated the deficiency. Future plans to improve the converter and packaging design are presented along with several conclusions.

Robust ion current oscillations under a steady electric field: An ion channel analog.

PubMed

Yan, Yu; Wang, Yunshan; Senapati, Satyajyoti; Schiffbauer, Jarrod; Yossifon, Gilad; Chang, Hsueh-Chia

2016-08-01

We demonstrate a nonlinear, nonequilibrium field-driven ion flux phenomenon, which unlike Teorell's nonlinear multiple field theory, requires only the application of one field: robust autonomous current-mass flux oscillations across a porous monolith coupled to a capillary with a long air bubble, which mimics a hydrophobic protein in an ion channel. The oscillations are driven by the hysteretic wetting dynamics of the meniscus when electro-osmotic flow and pressure driven backflow, due to bubble expansion, compete to approach zero mass flux within the monolith. Delayed rupture of the film around the advancing bubble cuts off the electric field and switches the monolith mass flow from the former to the latter. The meniscus then recedes and repairs the rupture to sustain an oscillation for a range of applied fields. This generic mechanism shares many analogs with current oscillations in cell membrane ion channel. At sufficiently high voltage, the system undergoes a state transition characterized by appearance of the ubiquitous 1/f power spectrum.

New approaches to provide ride-through for critical loads in electric power distribution systems

NASA Astrophysics Data System (ADS)

Montero-Hernandez, Oscar C.

2001-07-01

The extensive use of electronic circuits has enabled modernization, automation, miniaturization, high quality, low cost, and other achievements regarding electric loads in the last decades. However, modern electronic circuits and systems are extremely sensitive to disturbances from the electric power supply. In fact, the rate at which these disturbances happen is considerable as has been documented in recent years. In response to the power quality concerns presented previously, this dissertation is proposing new approaches to provide ride-through for critical loads during voltage disturbances with emphasis on voltage sags. In this dissertation, a new approach based on an AC-DC-AC system is proposed to provide ride-through for critical loads connected in buildings and/or an industrial system. In this approach, a three-phase IGBT inverter with a built in Dc-link voltage regulator is suitably controlled along with static by-pass switches to provide continuous power to critical loads. During a disturbance, the input utility source is disconnected and the power from the inverter is connected to the load. The remaining voltage in the AC supply is converted to DC and compensated before being applied to the inverter and the load. After detecting normal utility conditions, power from the utility is restored to the critical load. In order to achieve an extended ride-through capability a second approach is introduced. In this case, the Dc-link voltage regulator is performed by a DC-DC Buck-Boost converter. This new approach has the capability to mitigate voltage variations below and above the nominal value. In the third approach presented in this dissertation, a three-phase AC to AC boost converter is investigated. This converter provides a boosting action for the utility input voltages, right before they are applied to the load. The proposed Pulse Width Modulation (PWM) control strategy ensures independent control of each phase and compensates for both single-phase or poly-phase voltage sags. Algorithms capable of detecting voltage disturbances such as voltage sags, voltage swells, flicker, frequency change, and harmonics in a fast and reliable way are investigated and developed in this dissertation as an essential part of the approaches previously described. Simulation and experimental work has been done to validate the feasibility of all approaches under the most common voltage disturbances such as single-phase voltage sags and three-phase voltage sags.

Methods, systems and apparatus for controlling third harmonic voltage when operating a multi-space machine in an overmodulation region

DOEpatents

Perisic, Milun; Kinoshita, Michael H; Ranson, Ray M; Gallegos-Lopez, Gabriel

2014-06-03

Methods, system and apparatus are provided for controlling third harmonic voltages when operating a multi-phase machine in an overmodulation region. The multi-phase machine can be, for example, a five-phase machine in a vector controlled motor drive system that includes a five-phase PWM controlled inverter module that drives the five-phase machine. Techniques for overmodulating a reference voltage vector are provided. For example, when the reference voltage vector is determined to be within the overmodulation region, an angle of the reference voltage vector can be modified to generate a reference voltage overmodulation control angle, and a magnitude of the reference voltage vector can be modified, based on the reference voltage overmodulation control angle, to generate a modified magnitude of the reference voltage vector. By modifying the reference voltage vector, voltage command signals that control a five-phase inverter module can be optimized to increase output voltages generated by the five-phase inverter module.

High power density dc/dc converter: Selection of converter topology

NASA Technical Reports Server (NTRS)

Divan, Deepakraj M.

1990-01-01

The work involved in the identification and selection of a suitable converter topology is described. Three new dc/dc converter topologies are proposed: Phase-Shifted Single Active Bridge DC/DC Converter; Single Phase Dual Active Bridges DC/DC Converter; and Three Phase Dual Active Bridges DC/DC Converter (Topology C). The salient features of these topologies are: (1) All are minimal in structure, i.e., each consists of an input and output bridge, input and output filter and a transformer, all components essential for a high power dc/dc conversion process; (2) All devices of both the bridges can operate under near zero-voltage conditions, making possible a reduction of device switching losses and hence, an increase in switching frequency; (3) All circuits operate at a constant frequency, thus simplifying the task of the magnetic and filter elements; (4) Since, the leakage inductance of the transformer is used as the main current transfer element, problems associated with the diode reverse recovery are eliminated. Also, this mode of operation allows easy paralleling of multiple modules for extending the power capacity of the system; (5) All circuits are least sensitive to parasitic impedances, infact the parasitics are efficently utilized; and (6) The soft switching transitions, result in low electromagnetic interference. A detailed analysis of each topology was carried out. Based on the analysis, the various device and component ratings for each topology operating at an optimum point, and under the given specifications, are tabulated and discussed.

Advanced electrical power, distribution and control for the Space Transportation System

NASA Astrophysics Data System (ADS)

Hansen, Irving G.; Brandhorst, Henry W., Jr.

1990-08-01

High frequency power distribution and management is a technology ready state of development. As such, a system employs the fewest power conversion steps, and employs zero current switching for those steps. It results in the most efficiency, and lowest total parts system count when equivalent systems are compared. The operating voltage and frequency are application specific trade off parameters. However, a 20 kHz Hertz system is suitable for wide range systems.

Advanced electrical power, distribution and control for the Space Transportation System

NASA Technical Reports Server (NTRS)

Hansen, Irving G.; Brandhorst, Henry W., Jr.

1990-01-01

High frequency power distribution and management is a technology ready state of development. As such, a system employs the fewest power conversion steps, and employs zero current switching for those steps. It results in the most efficiency, and lowest total parts system count when equivalent systems are compared. The operating voltage and frequency are application specific trade off parameters. However, a 20 kHz Hertz system is suitable for wide range systems.

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

NASA Astrophysics Data System (ADS)

Liu, Guangyu; Wu, Liangcai; Song, Zhitang; Liu, Yan; Li, Tao; Zhang, Sifan; Song, Sannian; Feng, Songlin

2017-12-01

A memory cell composed of a selector device and a storage device is the basic unit of phase change memory. The threshold switching effect, main principle of selectors, is a universal phenomenon in chalcogenide glasses. In this work, we put forward a safe and controllable method to prepare a SiGeAsTeN chalcogenide film by implanting As ions into sputtered SiGeTeN films. For the SiGeAsTeN material, the phase structure maintains the amorphous state, even at high temperature, indicating that no phase transition occurs for this chalcogenide-based material. The electrical test results show that the SiGeAsTeN-based devices exhibit good threshold switching characteristics and the switching voltage decreases with the increasing As content. The decrease in valence alternation pairs, reducing trap state density, may be the physical mechanism for lower switch-on voltage, which makes the SiGeAsTeN material more applicable in selector devices through component optimization.

Resistive switching characteristics of thermally oxidized TiN thin films

NASA Astrophysics Data System (ADS)

Biju, K. P.

2018-04-01

Resistive switching characteristics of thermally oxidized TiN thin films and mechanisms were investigated.XPS results indicates Ti-O content decreases with sputter etching and Ti 2p peak shift towards lower binding energy due to formation of Ti-O-N and Ti-N. Pt/TiO2/TiON/TiN stack exhibits both clockwise switching (CWS) and counter clockwise switching(CCWS) characteristic depending on polarity of the applied voltage. However the transition from CCWS to CWS is irreversible. Two stable switching modes with opposite switching polarity and different electrical characteristics are found to coexist in the same memory cell. Clockwise switching shows filamentary characteristics that lead to faster switching with excellent retention at high temperature. Counter-clockwise switching exhibits homogeneous conduction with slower switching and moderate retention. The field-induced switching in both CCWS and CWS might be due to inhomogeneous defect distribution due to thermal oxidation.

Adjustable speed drive study, June 1985 to September 1988. Part 2: Appendices

NASA Astrophysics Data System (ADS)

Wallace, Alan

1989-08-01

Advances in speed control for motors in recent years, notably those in power electronics, have widened the range of application for several adjustable speed drive (ASD) types to include the smaller horsepower sizes. The dc motor drive, formerly in almost universal use for speed control, is being challenged by the high efficiency induction motor/pulse width modulation (PWM) drive; and for special small horsepower size applications, by the permanent magnet motor/PWM inverter drive or by the switched reluctance motor drive. The main characteristics of the several ASD types suitable for small horsepower size applications are discussed, as well as their unwanted side effects: poor power factor, harmonic distortion of the supply, acoustic noise, and electromagnetic interference. A procedure is recommended for determining which, if any, ASD to use.

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

NASA Astrophysics Data System (ADS)

Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

2017-12-01

This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

Development of a digital solar simulator based on full-bridge converter

NASA Astrophysics Data System (ADS)

Liu, Chen; Feng, Jian; Liu, Zhilong; Tong, Weichao; Ji, Yibo

2014-02-01

With the development of solar photovoltaic, distribution schemes utilized in power grid had been commonly application, and photovoltaic (PV) inverter is an essential equipment in grid. In this paper, a digital solar simulator based on full-bridge structure is presented. The output characteristic curve of system is electrically similar to silicon solar cells, which can greatly simplify research methods of PV inverter, improve the efficiency of research and development. The proposed simulator consists on a main control board based on TM320F28335, phase-shifted zero-voltage-switching (ZVS) DC-DC full-bridge converter and voltage and current sampling circuit, that allows emulating the voltage-current curve with the open-circuit voltage (Voc) of 900V and the short-circuit current (Isc) of 18A .When the system connected to a PV inverter, the inverter can quickly track from the open-circuit to the maximum power point and keep stability.

A thorough investigation of the progressive reset dynamics in HfO{sub 2}-based resistive switching structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenzi, P., E-mail: lorenzi@die.uniroma1.it; Rao, R.; Irrera, F.

2015-09-14

According to previous reports, filamentary electron transport in resistive switching HfO{sub 2}-based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated heremore » that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics.« less

Improved direct torque control of an induction generator used in a wind conversion system connected to the grid.

PubMed

Abdelli, Radia; Rekioua, Djamila; Rekioua, Toufik; Tounzi, Abdelmounaïm

2013-07-01

This paper presents a modulated hysteresis direct torque control (MHDTC) applied to an induction generator (IG) used in wind energy conversion systems (WECs) connected to the electrical grid through a back-to-back converter. The principle of this strategy consists in superposing to the torque reference a triangular signal, as in the PWM strategy, with the desired switching frequency. This new modulated reference is compared to the estimated torque by using a hysteresis controller as in the classical direct torque control (DTC). The aim of this new approach is to lead to a constant frequency and low THD in grid current with a unit power factor and a minimum voltage variation despite the wind variation. To highlight the effectiveness of the proposed method, a comparison was made with classical DTC and field oriented control method (FOC). The obtained simulation results, with a variable wind profile, show an adequate dynamic of the conversion system using the proposed method compared to the classical approaches. Copyright © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

Transient current interruption mechanism in a magnetically delayed vacuum switch

NASA Technical Reports Server (NTRS)

Morris, Gibson, Jr.; Dougal, Roger A.

1993-01-01

The capacity of a magnetically delayed vacuum switch to conduct current depends on the density of plasma injected into the switch. Exceeding the current capacity results in the switch entering a lossy mode of operation characterized by a transient interruption of the main current (opening behavior) and a rapid increase of voltage across the vacuum gap. Streak and framing photographs of the discharge indicate that a decrease of luminosity near the middle of the gap preceeds the transition to the opening phase. The zone of low luminosity propagates toward the cathode. This evidence suggests that the mechanism causing the opening phase is erosion of the background plasma in a manner similar to that in a plasma-opening switch. The resulting ion depletion forces a space-charge-limited conduction mode. The switch inductance maintains a high discharge current even during the space-charge-limited conduction phase, thus producing high internal fields. The high accelerating voltage, in turn, produces electron and ion beams that heat the electrode surfaces. As a result of the heating, jets of electrode vapor issue from the electrodes, either cathode or anode, depending on the selection of electrode materials.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Conducted noise analysis and protection of 45 kJ/s, ±50 kV capacitor charging power supply when interfaced with repetitive Marx based pulse power system.

PubMed

Naresh, P; Patel, Ankur; Sharma, Archana

2015-09-01

Pulse power systems with highly dynamic loads like klystron, backward wave oscillator (BWO), and magnetron generate highly dynamic noise. This noise leads to frequent failure of controlled switches in the inverter stage of charging power supply. Designing a reliable and compatible power supply for pulse power applications is always a tricky job when charging rate is in multiples of 10 kJ/s. A ±50 kV and 45 kJ/s capacitor charging power supply based on 4th order LCLC resonant topology has been developed for a 10 Hz repetitive Marx based system. Conditions for load independent constant current and zero current switching (ZCS) are derived mathematically. Noise generated at load end due to dynamic load is tackled effectively and reduction in magnitude noise voltage is achieved by providing shielding between primary and secondary of high voltage high frequency transformer and with LCLC low pass filter. Shielding scales down the ratio between coupling capacitance (Cc) and the collector-emitter capacitance of insulated gate bi-polar transistor switch, which in turn reduces the common mode noise voltage magnitude. The proposed 4th order LCLC resonant network acts as a low pass filter for differential mode noise in the reverse direction (from load to source). Power supply has been tested repeatedly with 5 Hz repetition rate with repetitive Marx based system connected with BWO load working fine without failure of single switch in the inverter stage.

Conducted noise analysis and protection of 45 kJ/s, ±50 kV capacitor charging power supply when interfaced with repetitive Marx based pulse power system

NASA Astrophysics Data System (ADS)

Naresh, P.; Patel, Ankur; Sharma, Archana

2015-09-01

Pulse power systems with highly dynamic loads like klystron, backward wave oscillator (BWO), and magnetron generate highly dynamic noise. This noise leads to frequent failure of controlled switches in the inverter stage of charging power supply. Designing a reliable and compatible power supply for pulse power applications is always a tricky job when charging rate is in multiples of 10 kJ/s. A ±50 kV and 45 kJ/s capacitor charging power supply based on 4th order LCLC resonant topology has been developed for a 10 Hz repetitive Marx based system. Conditions for load independent constant current and zero current switching (ZCS) are derived mathematically. Noise generated at load end due to dynamic load is tackled effectively and reduction in magnitude noise voltage is achieved by providing shielding between primary and secondary of high voltage high frequency transformer and with LCLC low pass filter. Shielding scales down the ratio between coupling capacitance (Cc) and the collector-emitter capacitance of insulated gate bi-polar transistor switch, which in turn reduces the common mode noise voltage magnitude. The proposed 4th order LCLC resonant network acts as a low pass filter for differential mode noise in the reverse direction (from load to source). Power supply has been tested repeatedly with 5 Hz repetition rate with repetitive Marx based system connected with BWO load working fine without failure of single switch in the inverter stage.

Compensated pulsed alternator

DOEpatents

Weldon, William F.; Driga, Mircea D.; Woodson, Herbert H.

1980-01-01

This invention relates to an electromechanical energy converter with inertial energy storage. The device, a single phase, two or multi-pole alternator with stationary field coils, and a rotating armature is provided. The rotor itself may be of laminated steel for slower pulses or for faster pulses should be nonmagnetic and electrically nonconductive in order to allow rapid penetration of the field as the armature coil rotates. The armature coil comprises a plurality of power generating conductors mounted on the rotor. The alternator may also include a stationary or counterrotating compensating coil to increase the output voltage thereof and to reduce the internal impedance of the alternator at the moment of peak outout. As the machine voltage rises sinusoidally, an external trigger switch is adapted to be closed at the appropriate time to create the desired output current from said alternator to an external load circuit, and as the output current passes through zero a self-commutating effect is provided to allow the switch to disconnect the generator from the external circuit.

Analysis and design of continuous class-E power amplifier at sub-nominal condition

NASA Astrophysics Data System (ADS)

Chen, Peng; Yang, Kai; Zhang, Tianliang

2017-12-01

The continuous class-E power amplifier at sub-nominal condition is proposed in this paper. The class-E power amplifier at continuous mode means it can be high efficient on a series matching networks while at sub-nominal condition means it only requires the zero-voltage-switching condition. Comparing with the classical class-E power amplifier, the proposed design method releases two additional design freedoms, which increase the class-E power amplifier's design flexibility. Also, the proposed continuous class-E power amplifier at sub-nominal condition can perform high efficiency over a broad bandwidth. The performance study of the continuous class-E power amplifier at sub-nominal condition is derived and the design procedure is summarised. The normalised switch voltage and current waveforms are investigated. Furthermore, the influences of different sub-nominal conditions on the power losses of the switch-on resistor and the output power capability are also discussed. A broadband continuous class-E power amplifier based on a Gallium Nitride (GaN) transistor is designed and testified to verify the proposed design methodology. The measurement results show, it can deliver 10-15 W output power with 64-73% power-added efficiency over 1.4-2.8 GHz.

Fast-switching chiral nematic liquid-crystal mode with polymer-sustained twisted vertical alignment.

PubMed

Chang, Kai-Han; Joshi, Vinay; Chien, Liang-Chy

2017-04-01

We demonstrate a fast-switching liquid-crystal mode with polymer-sustained twisted vertical alignment. By optimizing the polymerization condition, a polymer microstructure with controlled orientation is produced. The polymer microstructure not only synergistically suppresses the optical bounce during field-induced homeotropic-twist transition but also shortens the response time significantly. Theoretical analyses validate that the ground state free energy density is modified by the aligning field of the polymer microstructure, which affects the driving voltage of the device. The outcomes of this paper will enable the development of fast-switching and achromatic electro-optical and photonic devices.

Fast-switching chiral nematic liquid-crystal mode with polymer-sustained twisted vertical alignment

NASA Astrophysics Data System (ADS)

Chang, Kai-Han; Joshi, Vinay; Chien, Liang-Chy

2017-04-01

We demonstrate a fast-switching liquid-crystal mode with polymer-sustained twisted vertical alignment. By optimizing the polymerization condition, a polymer microstructure with controlled orientation is produced. The polymer microstructure not only synergistically suppresses the optical bounce during field-induced homeotropic-twist transition but also shortens the response time significantly. Theoretical analyses validate that the ground state free energy density is modified by the aligning field of the polymer microstructure, which affects the driving voltage of the device. The outcomes of this paper will enable the development of fast-switching and achromatic electro-optical and photonic devices.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Gosh, R.; Liu, Y.; Lopez, R.

2011-03-01

In recent years, various strongly correlated materials have shown sharp switching from insulator to metallic state in their I(V) transport curves. Determining if this is purely an out of equilibrium phenomena (due to the strong electric field applied throughout the sample) or simply a Joule heating issue is still an open question. To address this issue, we have first measured local I(V) curves in vanadium dioxide (VO2) Mott insulator at various temperatures using a conducting AFM setup and determined the voltage threshold of the insulator to metal switching. By lifting the tip above the surface (> 35 nm) , wehavethenmeasuredthepurelyelectrostaticforcebetweenthetipandsamplesurfaceasthevoltagebetweenthesetwowasincreased . Inaverynarrowtemperaturerange (below 360 K) , atipheightrange (below 60 nm) andavoltageappliedrange (above 8 V) , weobservedswitchingintheelectrostaticforce (telegraphicnoisevs . timeandvs . voltage) . ThispurelyelectricfieldeffectshowsthattheswitchingphenomenonisstillpresentevenwithoutJouleheatinginVO 2 .

Metal–insulator transition in a transition metal dichalcogenide: Dependence on metal contacts

NASA Astrophysics Data System (ADS)

Shimazu, Y.; Arai, K.; Iwabuchi, T.

2018-03-01

Transition metal dichalcogenides are promising layered materials for realizing novel nanoelectronic and nano-optoelectronic devices. Molybdenum disulfide (MoS2), a typical transition metal dichalcogenide, has been extensively investigated due to the presence of a sizable band gap, which enables the use of MoS2 as a channel material in field-effect transistors (FET). The gate-voltage-tunable metal–insulator transition and superconductivity using MoS2 have been demonstrated in previous studies. These interesting phenomena can be considered as quantum phase transitions in two-dimensional systems. In this study, we observed that the transport properties of thin MoS2 flakes in FET geometry significantly depend on metal contacts. On comparing Ti/Au with Al contacts, it was found that the threshold voltages for FET switching and metal–insulator transition were considerably lower for the device with Al contacts. This result indicated the significant influence of the Al contacts on the properties of MoS2 devices.

Low-Cost Servomotor Driver for PFM Control

PubMed Central

Aragon-Jurado, David

2017-01-01

Servomotors have already been around for some decades and they are extremely popular among roboticists due to their simple control technique, reliability and low-cost. They are usually controlled by using Pulse Width Modulation (PWM) and this paper aims to keep the idea of simplicity and low-cost, while introducing a new control technique: Pulse Frequency Modulation (PFM). The objective of this paper is to focus on our development of a low-cost servomotor controller which will allow the research community to use them with PFM. A low-cost commercial servomotor is used as the base system for the development: a small PCB that fits inside the case and allocates all the electronic components to control the motor has been designed to replace the original. The potentiometer is retained as the feedback sensor and a microcontroller is responsible for controlling the position of the motor. The paper compares the performance of a PWM and a PFM controlled servomotor. The comparison shows that the servomotor with our controller achieves a faster mechanism for switching targets and a lower latency. This controller can be used with neuromorphic systems to remove the conversion from events to PWM. PMID:29301221

Low-Cost Servomotor Driver for PFM Control.

PubMed

Aragon-Jurado, David; Morgado-Estevez, Arturo; Perez-Peña, Fernando

2017-12-31

Servomotors have already been around for some decades and they are extremely popular among roboticists due to their simple control technique, reliability and low-cost. They are usually controlled by using Pulse Width Modulation (PWM) and this paper aims to keep the idea of simplicity and low-cost, while introducing a new control technique: Pulse Frequency Modulation (PFM). The objective of this paper is to focus on our development of a low-cost servomotor controller which will allow the research community to use them with PFM. A low-cost commercial servomotor is used as the base system for the development: a small PCB that fits inside the case and allocates all the electronic components to control the motor has been designed to replace the original. The potentiometer is retained as the feedback sensor and a microcontroller is responsible for controlling the position of the motor. The paper compares the performance of a PWM and a PFM controlled servomotor. The comparison shows that the servomotor with our controller achieves a faster mechanism for switching targets and a lower latency. This controller can be used with neuromorphic systems to remove the conversion from events to PWM.

Metabolic alterations and neurodevelopmental outcome of infants with transposition of the great arteries.

PubMed

Park, I Sook; Yoon, S Young; Min, J Yeon; Kim, Y Hwue; Ko, J Kok; Kim, K Soo; Seo, D Man; Lee, J Hee

2006-01-01

Abnormal neurodevelopment has been reported for infants who were born with transposition of the great arteries (TGA) and underwent arterial switch operation (ASO). This study evaluates the cerebral metabolism of TGA infants at birth and before ASO and neurodevelopment 1 year after ASO. Proton magnetic resonance spectroscopy (1H-MRS) was performed on 16 full-term TGA brains before ASO within 3-6 days after birth. The brain metabolite ratios of [NAA/Cr], [Cho/Cr], and [mI/Cr] evaluated measured. Ten infants were evaluated at 1 year using the Bayley Scales of Infants Development II (BSED II). Cerebral metabolism of infants with TGA was altered in parietal white matter (PWM) and occipital gray matter (OGM) at birth before ASO. One year after ASO, [Cho/Cr] in PWM remained altered, but all metabolic ratios in OGM were normal. The results of BSID II at 1 year showed delayed mental and psychomotor development. This delayed neurodevelopmental outcome may reflect consequences of the altered cerebral metabolism in PWM measured by 1H-MRS. It is speculated that the abnormal hemodynamics due to TGA in utero may be responsible for the impaired cerebral metabolism and the subsequent neurodevelopmental deficit.

Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

NASA Astrophysics Data System (ADS)

Cui, B. S.; Guo, X. B.; Wu, K.; Li, D.; Zuo, Y. L.; Xi, L.

2016-03-01

Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe65Co35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (~4 GPa for PI as compared to ~180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work.

Compact pulse width modulation circuitry for silicon photomultiplier readout.

PubMed

Bieniosek, M F; Olcott, P D; Levin, C S

2013-08-07

The adoption of solid-state photodetectors for positron emission tomography (PET) system design and the interest in 3D interaction information from PET detectors has lead to an increasing number of readout channels in PET systems. To handle these additional readout channels, PET readout electronics should be simplified to reduce the power consumption, cost, and size of the electronics for a single channel. Pulse-width modulation (PWM), where detector pulses are converted to digital pulses with width proportional to the detected photon energy, promises to simplify PET readout by converting the signals to digital form at the beginning of the processing chain, and allowing a single time-to-digital converter to perform the data acquisition for many channels rather than routing many analogue channels and digitizing in the back end. Integrator based PWM systems, also known as charge-to-time converters (QTCs), are especially compact, reducing the front-end electronics to an op-amp integrator with a resistor discharge, and a comparator. QTCs, however, have a long dead-time during which dark count noise is integrated, reducing the output signal-to-noise ratio. This work presents a QTC based PWM circuit with a gated integrator that shows performance improvements over existing QTC based PWM. By opening and closing an analogue switch on the input of the integrator, the circuit can be controlled to integrate only the portions of the signal with a high signal-to-noise ratio. It also allows for multiplexing different detectors into the same PWM circuit while avoiding uncorrelated noise propagation between photodetector channels. Four gated integrator PWM circuits were built to readout the spatial channels of two position sensitive solid-state photomultiplier (PS-SSPM). Results show a 4 × 4 array 0.9 mm × 0.9 mm × 15 mm of LYSO crystals being identified on the 5 mm × 5 mm PS-SSPM at room temperature with no degradation for twofold multiplexing. In principle, much larger multiplexing ratios are possible, limited only by count rate issues.

Performance Analysis of a Static Synchronous Compensator (STATCOM)

NASA Astrophysics Data System (ADS)

Kambey, M. M.; Ticoh, J. D.

2018-02-01

Reactive power and voltage are some of the problems in electric power supply and A Gate Turn Off (GTO) Static Synchronous Compensator (STATCOM) is one of the type of FACTS with shunt which can supply variable reactive power and regulate the voltage of the bus where it is connected. This study only discuss about the performance characteristic of the three phase six-pulse STATCOM by analysing the current wave flowing through DC Capacitor which depend on switching current and capacitor voltage wave. Simulation methods used in this research is started with a mathematical analysis of the ac current, dc voltage and current equations that pass STATCOM from a literature. The result shows the presence of the capacitor voltage ripple also alters the ac current waveform, even though the errors to be not very significant and the constraint of the symmetry circuit is valid if the source voltages have no zero sequence components and the impedances in all the three phases are identical. There for to improve STATCOM performance it is necessary to use multi-pulse 12, 24, 36, 48 or more, and/or with a multilevel converter.

The High-efficiency LED Driver for Visible Light Communication Applications.

PubMed

Gong, Cihun-Siyong Alex; Lee, Yu-Chen; Lai, Jyun-Liang; Yu, Chueh-Hao; Huang, Li Ren; Yang, Chia-Yen

2016-08-08

This paper presents a LED driver for VLC. The main purpose is to solve the low data rate problem used to be in switching type LED driver. The GaN power device is proposed to replace the traditional silicon power device of switching LED driver for the purpose of increasing switching frequency of converter, thereby increasing the bandwidth of data transmission. To achieve high efficiency, the diode-connected GaN power transistor is utilized to replace the traditional ultrafast recovery diode used to be in switching type LED driver. This work has been experimentally evaluated on 350-mA output current. The results demonstrate that it supports the data of PWM dimming level encoded in the PPM scheme for VLC application. The experimental results also show that system's efficiency of 80.8% can be achieved at 1-Mb/s data rate.

Single event effects in pulse width modulation controllers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Penzin, S.H.; Crain, W.R.; Crawford, K.B.

1996-12-01

SEE testing was performed on pulse width modulation (PWM) controllers which are commonly used in switching mode power supply systems. The devices are designed using both Set-Reset (SR) flip-flops and Toggle (T) flip-flops which are vulnerable to single event upset (SEU) in a radiation environment. Depending on the implementation of the different devices the effect can be significant in spaceflight hardware.

Stability phase diagram of a perpendicular magnetic tunnel junction in noncollinear geometry

NASA Astrophysics Data System (ADS)

Strelkov, N.; Timopheev, A.; Sousa, R. C.; Chshiev, M.; Buda-Prejbeanu, L. D.; Dieny, B.

2017-05-01

Experimental measurements performed on MgO-based perpendicular magnetic tunnel junctions show a strong dependence of the stability voltage-field diagrams as a function of the direction of the magnetic field with respect to the plane of the sample. When the magnetic field is applied in-plane, systematic nonlinear phase boundaries are observed for various lateral sizes. The simulation results based on the phenomenological Landau-Lifshitz-Gilbert equation including the in-plane and out-of-plane spin transfer torques are consistent with the measurements if a second-order anisotropy contribution is considered. Furthermore, performing the stability analysis in linear approximation allowed us to analytically extract the critical switching voltage at zero temperature in the presence of an in-plane field. This study indicates that in the noncollinear geometry investigations are suitable to detect the presence of the second-order term in the anisotropy. Such higher order anisotropy term can yield an easy-cone anisotropy which reduces the thermal stability factor but allows for more reproducible spin transfer torque switching due to a reduced stochasticity of the switching. As a result, the energy per write event decreases much faster than the thermal stability factor as the second-order anisotropy becomes more negative. Easy-cone anisotropy can be useful for fast-switching spin transfer torque magnetic random access memories provided the thermal stability can be maintained above the required value for a given memory specification.

Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

NASA Astrophysics Data System (ADS)

Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

2016-11-01

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

Research on Parallel Three Phase PWM Converters base on RTDS

NASA Astrophysics Data System (ADS)

Xia, Yan; Zou, Jianxiao; Li, Kai; Liu, Jingbo; Tian, Jun

2018-01-01

Converters parallel operation can increase capacity of the system, but it may lead to potential zero-sequence circulating current, so the control of circulating current was an important goal in the design of parallel inverters. In this paper, the Real Time Digital Simulator (RTDS) is used to model the converters parallel system in real time and study the circulating current restraining. The equivalent model of two parallel converters and zero-sequence circulating current(ZSCC) were established and analyzed, then a strategy using variable zero vector control was proposed to suppress the circulating current. For two parallel modular converters, hardware-in-the-loop(HIL) study based on RTDS and practical experiment were implemented, results prove that the proposed control strategy is feasible and effective.

Methods, systems and apparatus for controlling operation of two alternating current (AC) machines

DOEpatents

Gallegos-Lopez, Gabriel [Torrance, CA; Nagashima, James M [Cerritos, CA; Perisic, Milun [Torrance, CA; Hiti, Silva [Redondo Beach, CA

2012-02-14

A system is provided for controlling two AC machines. The system comprises a DC input voltage source that provides a DC input voltage, a voltage boost command control module (VBCCM), a five-phase PWM inverter module coupled to the two AC machines, and a boost converter coupled to the inverter module and the DC input voltage source. The boost converter is designed to supply a new DC input voltage to the inverter module having a value that is greater than or equal to a value of the DC input voltage. The VBCCM generates a boost command signal (BCS) based on modulation indexes from the two AC machines. The BCS controls the boost converter such that the boost converter generates the new DC input voltage in response to the BCS. When the two AC machines require additional voltage that exceeds the DC input voltage required to meet a combined target mechanical power required by the two AC machines, the BCS controls the boost converter to drive the new DC input voltage generated by the boost converter to a value greater than the DC input voltage.

Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.

PubMed

Morales-Masis, M; van der Molen, S J; Fu, W T; Hesselberth, M B; van Ruitenbeek, J M

2009-03-04

We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

Tunable magnetization of infrared epsilon-near-zero media via field-effect modulation

NASA Astrophysics Data System (ADS)

Salary, Mohammad Mahdi; Mosallaei, Hossein

2018-04-01

In this letter, we demonstrate that field effect modulation enables electrical tuning of the effective permeability of epsilon-near-zero (ENZ) media at infrared frequencies. In particular, hexagonal silicon carbide (6H-SiC) is incorporated as an epsilon-near-zero host in a gated 6H-SiC/SiO2/Si heterostructure. The change in the applied voltage leads to a change in the carrier concentration of the accumulation layer formed at the interface of 6H-SiC and SiO2 which can alter the effective permeability of the heterostructure by virtue of the photonic doping effect. We will rigorously model and analyze the structure by linking charge transport and electromagnetic models. The presented mechanism allows for tuning the impedance and magnetization of ENZ materials in real-time while capturing extreme cases of epsilon-and-mu-near-zero and magnetic conductor. As such, it can be used for various applications such as real-time engineering of thermal emission, dynamic switching, reconfigurable tunneling, and holography.

Mechanical Computing Redux: Limitations at the Nanoscale

NASA Astrophysics Data System (ADS)

Liu, Tsu-Jae King

2014-03-01

Technology solutions for overcoming the energy efficiency limits of nanoscale complementary metal oxide semiconductor (CMOS) technology ultimately will be needed in order to address the growing issue of integrated-circuit chip power density. Off-state leakage current sets a fundamental lower limit in energy per operation for any voltage-level-based digital logic implemented with transistors (CMOS and beyond), which leads to practical limits for device density (i.e. cost) and operating frequency (i.e. system performance). Mechanical switches have zero off-state leakag and hence can overcome this fundamental limit. Contact adhesive force sets a lower limit for the switching energy of a mechanical switch, however, and also directly impacts its performance. This paper will review recent progress toward the development of nano-electro-mechanical relay technology and discuss remaining challenges for realizing the promise of mechanical computing for ultra-low-power computing. Supported by the Center for Energy Efficient Electronics Science (NSF Award 0939514).

Self-consistent radiation-based simulation of electric arcs: II. Application to gas circuit breakers

NASA Astrophysics Data System (ADS)

Iordanidis, A. A.; Franck, C. M.

2008-07-01

An accurate and robust method for radiative heat transfer simulation for arc applications was presented in the previous paper (part I). In this paper a self-consistent mathematical model based on computational fluid dynamics and a rigorous radiative heat transfer model is described. The model is applied to simulate switching arcs in high voltage gas circuit breakers. The accuracy of the model is proven by comparison with experimental data for all arc modes. The ablation-controlled arc model is used to simulate high current PTFE arcs burning in cylindrical tubes. Model accuracy for the lower current arcs is evaluated using experimental data on the axially blown SF6 arc in steady state and arc resistance measurements close to current zero. The complete switching process with the arc going through all three phases is also simulated and compared with the experimental data from an industrial circuit breaker switching test.

Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity

NASA Astrophysics Data System (ADS)

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Kim, Seon Yong; Park, In-Sung; Ahn, Jinho

2018-03-01

The anode interface effects on the resistive switching characteristics of Pt/HfO2/Pt resistors are investigated by changing the forming and switching polarity. Resistive switching properties are evaluated and compared with the polarity operation procedures, such as the reset voltage (Vr), set voltage (Vs), and current levels at low and high resistance states. When the same forming and switching voltage polarity are applied to the resistor, their switching parameters are widely distributed. However, the opposite forming and switching voltage polarity procedures enhance the uniformity of the switching parameters. In particular, the Vs distribution is strongly affected by the voltage polarity variation. A model is proposed based on cone-shaped filament formation through the insulator and the cone diameter at the anode interface to explain the improved resistive switching characteristics under opposite polarity operation. The filament cone is thinner near the anode interface during the forming process; hence, the anode is altered by the application of a switching voltage with opposite polarity to the forming voltage polarity and the converted anode interface becomes the thicker part of the cone. The more uniform and stable switching behavior is attributed to control over the formation and rupture of the cone-shaped filaments at their thicker parts.

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE PAGES

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David; ...

2018-03-29

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn3Sn single crystals

NASA Astrophysics Data System (ADS)

Sung, N. H.; Ronning, F.; Thompson, J. D.; Bauer, E. D.

2018-03-01

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T1 = 275 K and T2 = 200 K, below the antiferromagnetic phase transition at TN ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω-1 cm-1 to near zero below T1, coincident with the vanishing of the weak ferromagnetic moment. This illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

The phenomenon of voltage controlled switching in disordered superconductors.

PubMed

Ghosh, Sanjib; De Munshi, D

2014-01-15

The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device.

A High Efficiency Boost Converter with MPPT Scheme for Low Voltage Thermoelectric Energy Harvesting

NASA Astrophysics Data System (ADS)

Guan, Mingjie; Wang, Kunpeng; Zhu, Qingyuan; Liao, Wei-Hsin

2016-11-01

Using thermoelectric elements to harvest energy from heat has been of great interest during the last decade. This paper presents a direct current-direct current (DC-DC) boost converter with a maximum power point tracking (MPPT) scheme for low input voltage thermoelectric energy harvesting applications. Zero current switch technique is applied in the proposed MPPT scheme. Theoretical analysis on the converter circuits is explored to derive the equations for parameters needed in the design of the boost converter. Simulations and experiments are carried out to verify the theoretical analysis and equations. A prototype of the designed converter is built using discrete components and a low-power microcontroller. The results show that the designed converter can achieve a high efficiency at low input voltage. The experimental efficiency of the designed converter is compared with a commercial converter solution. It is shown that the designed converter has a higher efficiency than the commercial solution in the considered voltage range.

Precision control of eluted activity from a Sr/Rb generator for cardiac positron emission tomography.

PubMed

Klein, R; Adler, A; Beanlands, R S; deKemp, R A

2004-01-01

A rubidium-82 (/sup 82/Rb) elution system is described for use with clinical positron emission tomography. The system is self-calibrating with 1.4% repeatability, independent of generator activity and elution flow rate. Saline flow is switched between a /sup 82/Sr//sup 82/Rb generator and a bypass line to achieve a constant activity elution of /sup 82/Rb. In the present study, pulse width modulation (PWM) of a solenoid valve is compared to simple threshold control as a means to simulate a proportional valve. A predictive-corrective control algorithm is developed which produces a constant activity elution within the constraints of long feedback delay and short elution time. Accurate constant-activity elutions of 10-70% of the total generator activity were demonstrated using the threshold comparison control. The adaptive-corrective control of the PWM valve provided a substantial improvement in precision of the steady-state output.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of onemore » or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.« less

Simulation model for a seven-phase BLDCM drive system

NASA Astrophysics Data System (ADS)

Park, Sang-Hoon; Lee, Won-Cheol; Lee, Jung-Hyo; Yu, Jae-Sung; Kim, Gyu-Sik; Won, Chung-Yuen

2007-12-01

BLDC motors have many advantages over brushed DC motors and induction motors. So, BLDC motors extend their application to many industrial fields. In this paper, the digital simulation and modeling of a 7-phase brushless DC motor have been presented. The 14-switch inverter and a 7-phase brushless DC motor drive system are simulated using hysteresis current controller and logic of switching pattern with the Boolean¡s function. Through some simulations, we found that our modeling and analysis of a 7-phase BLDCM with PWM inverter would be helpful for the further studies of the multi-phase BLDCM drive systems.

Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory.

PubMed

Jiang, Hao; Stewart, Derek A

2017-05-17

Introducing dopants is an important way to tailor and improve electronic properties of transition metal oxides used as high-k dielectric thin films and resistance switching layers in leading memory technologies, such as dynamic and resistive random access memory (ReRAM). Ta 2 O 5 has recently received increasing interest because Ta 2 O 5 -based ReRAM demonstrates high switching speed, long endurance, and low operating voltage. However, advances in optimizing device characteristics with dopants have been hindered by limited and contradictory experiments in this field. We report on a systematic study on how various metal dopants affect oxygen vacancy formation in crystalline and amorphous Ta 2 O 5 from first principles. We find that isoelectronic dopants and weak n-type dopants have little impact on neutral vacancy formation energy and that p-type dopants can lower the formation energy significantly by introducing holes into the system. In contrast, n-type dopants have a deleterious effect and actually increase the formation energy for charged oxygen vacancies. Given the similar doping trend reported for other binary transition metal oxides, this doping trend should be universally valid for typical binary transition metal oxides. Based on this guideline, we propose that p-type dopants (Al, Hf, Zr, and Ti) can lower the forming/set voltage and improve retention properties of Ta 2 O 5 ReRAM.

A β-Ta system for current induced magnetic switching in the absence of external magnetic field

NASA Astrophysics Data System (ADS)

Chen, Wenzhe; Qian, Lijuan; Xiao, Gang

2018-05-01

Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.

Dynamic Performance of a Back-to-Back HVDC Station Based on Voltage Source Converters

NASA Astrophysics Data System (ADS)

Khatir, Mohamed; Zidi, Sid-Ahmed; Hadjeri, Samir; Fellah, Mohammed-Karim

2010-01-01

The recent developments in semiconductors and control equipment have made the voltage source converter based high voltage direct current (VSC-HVDC) feasible. This new DC transmission is known as "HVDC Light or "HVDC Plus by leading vendors. Due to the use of VSC technology and pulse width modulation (PWM) the VSC-HVDC has a number of potential advantages as compared with classic HVDC. In this paper, the scenario of back-to-back VSC-HVDC link connecting two adjacent asynchronous AC networks is studied. Control strategy is implemented and its dynamic performances during disturbances are investigated in MATLAB/Simulink program. The simulation results have shown good performance of the proposed system under balanced and unbalanced fault conditions.

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

PubMed

Liu, Guanxiong; Debnath, Bishwajit; Pope, Timothy R; Salguero, Tina T; Lake, Roger K; Balandin, Alexander A

2016-10-01

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe 2 , 1T-TaS 2 and 1T-TiSe 2 exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS 2 less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS 2 film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

Modeling, Dynamics, Bifurcation Behavior and Stability Analysis of a DC-DC Boost Converter in Photovoltaic Systems

NASA Astrophysics Data System (ADS)

Zhioua, M.; El Aroudi, A.; Belghith, S.; Bosque-Moncusí, J. M.; Giral, R.; Al Hosani, K.; Al-Numay, M.

A study of a DC-DC boost converter fed by a photovoltaic (PV) generator and supplying a constant voltage load is presented. The input port of the converter is controlled using fixed frequency pulse width modulation (PWM) based on the loss-free resistor (LFR) concept whose parameter is selected with the aim to force the PV generator to work at its maximum power point. Under this control strategy, it is shown that the system can exhibit complex nonlinear behaviors for certain ranges of parameter values. First, using the nonlinear models of the converter and the PV source, the dynamics of the system are explored in terms of some of its parameters such as the proportional gain of the controller and the output DC bus voltage. To present a comprehensive approach to the overall system behavior under parameter changes, a series of bifurcation diagrams are computed from the circuit-level switched model and from a simplified model both implemented in PSIM© software showing a remarkable agreement. These diagrams show that the first instability that takes place in the system period-1 orbit when a primary parameter is varied is a smooth period-doubling bifurcation and that the nonlinearity of the PV generator is irrelevant for predicting this phenomenon. Different bifurcation scenarios can take place for the resulting period-2 subharmonic regime depending on a secondary bifurcation parameter. The boundary between the desired period-1 orbit and subharmonic oscillation resulting from period-doubling in the parameter space is obtained by calculating the eigenvalues of the monodromy matrix of the simplified model. The results from this model have been validated with time-domain numerical simulation using the circuit-level switched model and also experimentally from a laboratory prototype. This study can help in selecting the parameter values of the circuit in order to delimit the region of period-1 operation of the converter which is of practical interest in PV systems.

The High-efficiency LED Driver for Visible Light Communication Applications

PubMed Central

Gong, Cihun-Siyong Alex; Lee, Yu-Chen; Lai, Jyun-Liang; Yu, Chueh-Hao; Huang, Li Ren; Yang, Chia-Yen

2016-01-01

This paper presents a LED driver for VLC. The main purpose is to solve the low data rate problem used to be in switching type LED driver. The GaN power device is proposed to replace the traditional silicon power device of switching LED driver for the purpose of increasing switching frequency of converter, thereby increasing the bandwidth of data transmission. To achieve high efficiency, the diode-connected GaN power transistor is utilized to replace the traditional ultrafast recovery diode used to be in switching type LED driver. This work has been experimentally evaluated on 350-mA output current. The results demonstrate that it supports the data of PWM dimming level encoded in the PPM scheme for VLC application. The experimental results also show that system’s efficiency of 80.8% can be achieved at 1-Mb/s data rate. PMID:27498921

A Smart Load Interface and Voltage Regulator for Electrostatic Vibration Energy Harvester

NASA Astrophysics Data System (ADS)

Bedier, Mohammed; Basset, Philippe; Galayko, Dimitri

2016-11-01

This paper presents a new implementation in ams 0.35μm HV technology of a complete energy management system for an electrostatic vibrational energy harvester (e-VEH). It is based on the Bennet's doubler architecture and includes a load voltage regulator (LVR) and a smart Load Interface (LI) that are self-controlled with internal voltages for maximum power point tracking (MMPT). The CMOS implementation makes use of an energy harvester that is capable of producing up to 1.8μW at harmonic excitation, given its internal voltage is kept within its optimum. An intermediate LI stage and its controller makes use of a high side switch with zero static power level shifter, and a low power hysteresis comparator. A full circuit level simulation with a VHDL-AMS model of the e-VEH presented was successfully achieved, indicating that the proposed load interface controller consumes less than 100nW average power. Moreover, a LVR regulates the buffer and discharge the harvested energy into a generic resistive load maintaining the voltage within a nominal value of 2 Volts.

High-voltage, high-current, solid-state closing switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Kumar, Amit; Chandran, Achu; Rangra, Kamaljit

2017-02-01

Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 µm to 1 µm. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

PubMed

Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

2016-05-25

DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

2018-05-01

The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Voltage control in pulsed system by predict-ahead control

DOEpatents

Payne, Anthony N.; Watson, James A.; Sampayan, Stephen E.

1994-01-01

A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load.

Voltage control in pulsed system by predict-ahead control

DOEpatents

Payne, A.N.; Watson, J.A.; Sampayan, S.E.

1994-09-13

A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load. 4 figs.

Voltage-Boosting Driver For Switching Regulator

NASA Technical Reports Server (NTRS)

Trump, Ronald C.

1990-01-01

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Characteristic investigation and control of a modular multilevel converter-based HVDC system under single-line-to-ground fault conditions

DOE PAGES

Shi, Xiaojie; Wang, Zhiqiang; Liu, Bo; ...

2014-05-16

This paper presents the analysis and control of a multilevel modular converter (MMC)-based HVDC transmission system under three possible single-line-to-ground fault conditions, with special focus on the investigation of their different fault characteristics. Considering positive-, negative-, and zero-sequence components in both arm voltages and currents, the generalized instantaneous power of a phase unit is derived theoretically according to the equivalent circuit model of the MMC under unbalanced conditions. Based on this model, a novel double-line frequency dc-voltage ripple suppression control is proposed. This controller, together with the negative-and zero-sequence current control, could enhance the overall fault-tolerant capability of the HVDCmore » system without additional cost. To further improve the fault-tolerant capability, the operation performance of the HVDC system with and without single-phase switching is discussed and compared in detail. Lastly, simulation results from a three-phase MMC-HVDC system generated with MATLAB/Simulink are provided to support the theoretical analysis and proposed control schemes.« less

Zero-state Markov switching count-data models: an empirical assessment.

PubMed

Malyshkina, Nataliya V; Mannering, Fred L

2010-01-01

In this study, a two-state Markov switching count-data model is proposed as an alternative to zero-inflated models to account for the preponderance of zeros sometimes observed in transportation count data, such as the number of accidents occurring on a roadway segment over some period of time. For this accident-frequency case, zero-inflated models assume the existence of two states: one of the states is a zero-accident count state, which has accident probabilities that are so low that they cannot be statistically distinguished from zero, and the other state is a normal-count state, in which counts can be non-negative integers that are generated by some counting process, for example, a Poisson or negative binomial. While zero-inflated models have come under some criticism with regard to accident-frequency applications - one fact is undeniable - in many applications they provide a statistically superior fit to the data. The Markov switching approach we propose seeks to overcome some of the criticism associated with the zero-accident state of the zero-inflated model by allowing individual roadway segments to switch between zero and normal-count states over time. An important advantage of this Markov switching approach is that it allows for the direct statistical estimation of the specific roadway-segment state (i.e., zero-accident or normal-count state) whereas traditional zero-inflated models do not. To demonstrate the applicability of this approach, a two-state Markov switching negative binomial model (estimated with Bayesian inference) and standard zero-inflated negative binomial models are estimated using five-year accident frequencies on Indiana interstate highway segments. It is shown that the Markov switching model is a viable alternative and results in a superior statistical fit relative to the zero-inflated models.

Design of an Internal Model Control strategy for single-phase grid-connected PWM inverters and its performance analysis with a non-linear local load and weak grid.

PubMed

Chaves, Eric N; Coelho, Ernane A A; Carvalho, Henrique T M; Freitas, Luiz C G; Júnior, João B V; Freitas, Luiz C

2016-09-01

This paper presents the design of a controller based on Internal Model Control (IMC) applied to a grid-connected single-phase PWM inverter. The mathematical modeling of the inverter and the LCL output filter, used to project the 1-DOF IMC controller, is presented and the decoupling of grid voltage by a Feedforward strategy is analyzed. A Proportional - Resonant Controller (P+Res) was used for the control of the same plant in the running of experimental results, thus moving towards the discussion of differences regarding IMC and P+Res performances, which arrived at the evaluation of the proposed control strategy. The results are presented for typical conditions, for weak-grid and for non-linear local load, in order to verify the behavior of the controller against such situations. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

PWM Inverter control and the application thereof within electric vehicles

DOEpatents

Geppert, Steven

1982-01-01

An inverter (34) which provides power to an A.C. machine (28) is controlled by a circuit (36) employing PWM control strategy whereby A.C. power is supplied to the machine at a preselectable frequency and preselectable voltage. This is accomplished by the technique of waveform notching in which the shapes of the notches are varied to determine the average energy content of the overall waveform. Through this arrangement, the operational efficiency of the A.C. machine is optimized. The control circuit includes a micro-computer and memory element which receive various parametric inputs and calculate optimized machine control data signals therefrom. The control data is asynchronously loaded into the inverter through an intermediate buffer (38). In its preferred embodiment, the present invention is incorporated within an electric vehicle (10) employing a 144 VDC battery pack (32) and a three-phase induction motor (18).

A HIGH BANDWIDTH BIPOLAR POWER SUPPLY FOR THE FAST CORRECTORS IN THE APS UPGRADE*

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ju; Sprau, Gary

The APS Upgrade of a multi-bend achromat (MBA) storage ring requires a fast bipolar power supply for the fast correction magnets. The key performance requirement of the power supply includes a small-signal bandwidth of 10 kHz for the output current. This requirement presents a challenge to the design because of the high inductance of the magnet load and a limited input DC voltage. A prototype DC/DC power supply utilizing a MOSFET H-bridge circuit with a 500 kHz PWM has been developed and tested successfully. The prototype achieved a 10-kHz bandwidth with less than 3-dB attenuation for a signal 0.5% ofmore » the maximum operating current of 15 amperes. This paper presents the design of the power circuit, the PWM method, the control loop, and the test results.« less

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.

PubMed

Li, Yingtao; Yuan, Peng; Fu, Liping; Li, Rongrong; Gao, Xiaoping; Tao, Chunlan

2015-10-02

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

Modeling and control of fuel cell based distributed generation systems

NASA Astrophysics Data System (ADS)

Jung, Jin Woo

This dissertation presents circuit models and control algorithms of fuel cell based distributed generation systems (DGS) for two DGS topologies. In the first topology, each DGS unit utilizes a battery in parallel to the fuel cell in a standalone AC power plant and a grid-interconnection. In the second topology, a Z-source converter, which employs both the L and C passive components and shoot-through zero vectors instead of the conventional DC/DC boost power converter in order to step up the DC-link voltage, is adopted for a standalone AC power supply. In Topology 1, two applications are studied: a standalone power generation (Single DGS Unit and Two DGS Units) and a grid-interconnection. First, dynamic model of the fuel cell is given based on electrochemical process. Second, two full-bridge DC to DC converters are adopted and their controllers are designed: an unidirectional full-bridge DC to DC boost converter for the fuel cell and a bidirectional full-bridge DC to DC buck/boost converter for the battery. Third, for a three-phase DC to AC inverter without or with a Delta/Y transformer, a discrete-time state space circuit model is given and two discrete-time feedback controllers are designed: voltage controller in the outer loop and current controller in the inner loop. And last, for load sharing of two DGS units and power flow control of two DGS units or the DGS connected to the grid, real and reactive power controllers are proposed. Particularly, for the grid-connected DGS application, a synchronization issue between an islanding mode and a paralleling mode to the grid is investigated, and two case studies are performed. To demonstrate the proposed circuit models and control strategies, simulation test-beds using Matlab/Simulink are constructed for each configuration of the fuel cell based DGS with a three-phase AC 120 V (L-N)/60 Hz/50 kVA and various simulation results are presented. In Topology 2, this dissertation presents system modeling, modified space vector PWM implementation (MSVPWM) and design of a closed-loop controller of the Z-source converter which utilizes L and C components and shoot-through zero vectors for the standalone AC power generation. The fuel cell system is modeled by an electrical R-C circuit in order to include slow dynamics of the fuel cells and a voltage-current characteristic of a cell is also considered. A discrete-time state space model is derived to implement digital control and a space vector pulse-width modulation (SVPWM) technique is modified to realize the shoot-through zero vectors that boost the DC-link voltage. Also, three discrete-time feedback controllers are designed: a discrete-time optimal voltage controller, a discrete-time sliding mode current controller, and a discrete-time PI DC-link voltage controller. Furthermore, an asymptotic observer is used to reduce the number of sensors and enhance the reliability of the system. To demonstrate the analyzed circuit model and proposed control strategy, various simulation results using Matlab/Simulink are presented under both light/heavy loads and linear/nonlinear loads for a three-phase AC 208 V (L-L)/60 Hz/10 kVA.

Research on Control System of Three - phase Brushless DC Motor for Electric Vehicle

NASA Astrophysics Data System (ADS)

Wang, Zhiwei; Jin, Hai; Guo, Jie; Su, Jie; Wang, Miao

2017-12-01

In order to study the three-phase brushless motor control system of electric vehicle, Freescale9S12XS128 chip is used as the control core, and the power MOSFET is used as the inverter device. The software is compiled by Codewarrior software. The speed control link adopts open-loop control, and the control chip collects the external sensor signal voltage Change control PWM signal output control three-phase brushless DC motor speed. The whole system consists of Hall position detection module, current detection module, power drive module and voltage detection module. The basic functions of three-phase brushless DC motor drive control are realized.

Voltage controlled Bi-mode resistive switching effects in MnO2 based devices

NASA Astrophysics Data System (ADS)

Hu, P.; Wu, S. X.; Wang, G. L.; Li, H. W.; Li, D.; Li, S. W.

2018-01-01

In this paper, the voltage induced bi-mode resistive switching behavior of an MnO2 thin film based device was studied. The device showed prominent bipolar resistive switching behavior with good reproducibility and high endurance. In addition, complementary resistive switching characteristics can be observed by extending the voltage bias during voltage sweep operations. The electrical measurement data and fitting results indicate that the oxygen vacancies act as defects to form a conductive path, which is connective or disrupted to realize a low resistive state or a high resistive state. Changing the sweep voltage can tune the oxygen vacancies distribution, which will achieve complementary resistive switching.

A voltage-division-type low-jitter self-triggered repetition-rate switch.

PubMed

Su, Jian-Cang; Zeng, Bo; Gao, Peng-Cheng; Li, Rui; Wu, Xiao-Long; Zhao, Liang

2016-10-01

A voltage-division-type (V/N) low-jitter self-triggered multi-stage switch is put forward. It comprises of a triggered corona gap, several quasi-uniform-field gaps, and an inversion inductor. When the corona gap is in the stage of self-breakdown, the multi-stage gaps are triggered and the switch is closed via an over-voltage. This type of V/N switch has the advantage of compact structure since the auxiliary components like the gas-blowing system and the triggered system are eliminated from the whole system. It also has advantages such as low breakdown jitter and high energy efficiency. The dependence of the self-triggered voltage on the over-voltage factor and the switch operating voltage is deduced. A switch of this type is designed and fabricated and experiments to research its characteristics are conducted. The results show that this switch can operate on a voltage of 1 MV at 50 Hz and can generate 1000 successive pulses with a jitter as low as 3% and an energy efficiency as high as 90%. This V/N switch can work under a high repetition rate with a long lifetime.

Gate-tunable gigantic changes in lattice parameters and optical properties in VO2

NASA Astrophysics Data System (ADS)

Nakano, Masaki; Okuyama, Daisuke; Shibuya, Keisuke; Ogawa, Naoki; Hatano, Takafumi; Kawasaki, Masashi; Arima, Taka-Hisa; Iwasa, Yoshihiro; Tokura, Yoshinori

2014-03-01

The field-effect transistor provides an electrical switching function of current flowing through a channel surface by external gate voltage (VG). We recently reported that an electric-double-layer transistor (EDLT) based on vanadium dioxide (VO2) enables electrical switching of the metal-insulator phase transition, where the low-temperature insulating state can be completely switched to the metallic state by application of VG. Here we demonstrate that VO2-EDLT enables electrical switching of lattice parameters and optical properties as well as electrical current. We performed in-situ x-ray diffraction and optical transmission spectroscopy measurements, and found that the c-axis length and the infrared transmittance of VO2 can be significantly modulated by more than 1% and 40%, respectively, by application of VG. We emphasize that these distinguished features originate from the electric-field induced bulk phase transition available with VO2-EDLT. This work was supported by the Japan Society for the Promotion of Science (JSPS) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Yao-Feng, E-mail: yfchang@utexas.edu; Zhou, Fei; Chen, Ying-Chen

2016-01-18

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS) memory using TiW/SiO{sub x}/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO{sub x}-based RS memory. By using amore » conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO{sub x}-based RS memory.« less

Origin of nonlinear transport across the magnetically induced superconductor-metal-insulator transition in two dimensions.

PubMed

Seo, Y; Qin, Y; Vicente, C L; Choi, K S; Yoon, Jongsoo

2006-08-04

We have studied the effect of perpendicular magnetic fields and temperatures on nonlinear electronic transport in amorphous Ta superconducting thin films. The films exhibit a magnetic field-induced metallic behavior intervening the superconductor-insulator transition in the zero temperature limit. We show that the phase-identifying nonlinear transport in the superconducting and metallic phases arises from an intrinsic origin, not from an electron heating effect. The nonlinear transport is found to accompany an extraordinarily long voltage response time.

Design of a Miniaturized RAD Hard Point-of-Load Converter

NASA Astrophysics Data System (ADS)

Lofgren, Henrik; Landstrom, Sven; Gunnarsson, Marcus; Hagstrom, Maria

2014-08-01

As an ARTES 5.2 activity, a miniaturized radiation hardened Point-Of-Load converter (uPOL) has been developed. Several different design options have been evaluated before the final system level design was selected. The selected topology is a buck regulator with synchronous rectification utilizing peak current mode control. The PWM logic is designed using discrete electronics. Inside the POL converter package, an independent latching current limiter and clamping over- voltage protection are included as protection devices. The converter has an input voltage range of 4.8-6.2V, output voltage range of 1.2-3.5V and an output current of 0-3.5A. The final converter will be a metal packaged hybrid built on LTCC technology with an operating case temperature range of -40 to +85 °C.

Fully parameterized model of a voltage-driven capacitive coupled micromachined ohmic contact switch for RF applications

NASA Astrophysics Data System (ADS)

Heeb, Peter; Tschanun, Wolfgang; Buser, Rudolf

2012-03-01

A comprehensive and completely parameterized model is proposed to determine the related electrical and mechanical dynamic system response of a voltage-driven capacitive coupled micromechanical switch. As an advantage over existing parameterized models, the model presented in this paper returns within few seconds all relevant system quantities necessary to design the desired switching cycle. Moreover, a sophisticated and detailed guideline is given on how to engineer a MEMS switch. An analytical approach is used throughout the modelling, providing representative coefficients in a set of two coupled time-dependent differential equations. This paper uses an equivalent mass moving along the axis of acceleration and a momentum absorption coefficient. The model describes all the energies transferred: the energy dissipated in the series resistor that models the signal attenuation of the bias line, the energy dissipated in the squeezed film, the stored energy in the series capacitor that represents a fixed separation in the bias line and stops the dc power in the event of a short circuit between the RF and dc path, the energy stored in the spring mechanism, and the energy absorbed by mechanical interaction at the switch contacts. Further, the model determines the electrical power fed back to the bias line. The calculated switching dynamics are confirmed by the electrical characterization of the developed RF switch. The fabricated RF switch performs well, in good agreement with the modelled data, showing a transition time of 7 µs followed by a sequence of bounces. Moreover, the scattering parameters exhibit an isolation in the off-state of >8 dB and an insertion loss in the on-state of <0.6 dB up to frequencies of 50 GHz. The presented model is intended to be integrated into standard circuit simulation software, allowing circuit engineers to design the switch bias line, to minimize induced currents and cross actuation, as well as to find the mechanical structure dimensions necessary for the desired switching time and actuation voltage waveform. Moreover, process related design rules can be automatically verified.

Design and development of repetitive capacitor charging power supply based on series-parallel resonant converter topology.

PubMed

Patel, Ankur; Nagesh, K V; Kolge, Tanmay; Chakravarthy, D P

2011-04-01

LCL resonant converter based repetitive capacitor charging power supply (CCPS) is designed and developed in the division. The LCL converter acts as a constant current source when switching frequency is equal to the resonant frequency. When both resonant inductors' values of LCL converter are same, it results in inherent zero current switching (ZCS) in switches. In this paper, ac analysis with fundamental frequency approximation of LCL resonant tank circuit, frequency dependent of current gain converter followed by design, development, simulation, and practical result is described. Effect of change in switching frequency and resonant frequency and change in resonant inductors ratio on CCPS will be discussed. An efficient CCPS of average output power of 1.2 kJ/s, output voltage 3 kV, and 300 Hz repetition rate is developed in the division. The performance of this CCPS has been evaluated in the laboratory by charging several values of load capacitance at various repetition rates. These results indicate that this design is very feasible for use in capacitor-charging applications. © 2011 American Institute of Physics

Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

NASA Astrophysics Data System (ADS)

Hung, Cheng-Chun; Lin, Yow-Jon

2018-01-01

In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

New Fluid Prevents Railway Ice

NASA Technical Reports Server (NTRS)

2001-01-01

Through a licensing agreement between NASA's Ames Research Center and Midwest Industrial Supply, Inc. (MIS), two MIS products have been enhanced with NASA's anti-icing fluid technology. MIS offers the new fluid in two commercial products, the Zero Gravity(TM) Third Rail Anti-Icer/Deicer and the Ice Free Switch(R). Using NASA's fluid technology, these products form a protective-coating barrier that prevents the buildup of ice and snow. Applying the fluid to the railway components prior to ice or snowstorm works as an anti-icing fluid, remaining in place to melt precipitation as it hits the surface. It also functions as a deicing fluid. If applied to an already frozen switch or rail, it will quickly melt the ice, free the frozen parts, and then remain in place to prevent refreezing. Additional benefits include the ability to cling to vertical rail surfaces and resist the effects of rain and wind. With the Ice Free Switch, it takes only five minutes to treat the switch by spraying, brushing, or pouring on the product. Ice Free Switch requires as little as one gallon per switch whereas other deicing fluids require five to ten gallons of liquid to effectively melt ice. Zero Gravity serves the same anti-icing/deicing purposes but applies fluid to the third rail through a system that is easily installed onto mass transit cars. A tank of fluid and a dispensing system are placed underneath the train car and the fluid is applied as the train runs its route.

Electromechanical systems with transient high power response operating from a resonant AC link

NASA Technical Reports Server (NTRS)

Burrows, Linda M.; Hansen, Irving G.

1992-01-01

The combination of an inherently robust asynchronous (induction) electrical machine with the rapid control of energy provided by a high frequency resonant AC link enables the efficient management of higher power levels with greater versatility. This could have a variety of applications from launch vehicles to all-electric automobiles. These types of systems utilize a machine which is operated by independent control of both the voltage and frequency. This is made possible by using an indirect field-oriented control method which allows instantaneous torque control in all four operating quadrants. Incorporating the AC link allows the converter in these systems to switch at the zero crossing of every half cycle of the AC waveform. This zero loss switching of the link allows rapid energy variations to be achieved without the usual frequency proportional switching loss. Several field-oriented control systems were developed by LeRC and General Dynamics Space Systems Division under contract to NASA. A description of a single motor, electromechanical actuation system is presented. Then, focus is on a conceptual design for an AC electric vehicle. This design incorporates an induction motor/generator together with a flywheel for peak energy storage. System operation and implications along with the associated circuitry are addressed. Such a system would greatly improve all-electric vehicle ranges over the Federal Urban Driving Cycle (FUD).

Electric-field-induced magnetic domain writing in a Co wire

NASA Astrophysics Data System (ADS)

Tanaka, Yuki; Hirai, Takamasa; Koyama, Tomohiro; Chiba, Daichi

2018-05-01

We have demonstrated that the local magnetization in a Co microwire can be switched by an application of a gate voltage without using any external magnetic fields. The electric-field-induced reversible ferromagnetic phase transition was used to realize this. An internal stray field from a ferromagnetic gate electrode assisted the local domain reversal in the Co wire. This new concept of electrical domain switching may be useful for dramatically reducing the power consumption of writing information in a magnetic racetrack memory, in which a shift of a magnetic domain by electric current is utilized.

Electrical detection of microwave assisted magnetization reversal by spin pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Siddharth; Subhra Mukherjee, Sankha; Elyasi, Mehrdad

2014-03-24

Microwave assisted magnetization reversal has been investigated in a bilayer system of Pt/ferromagnet by detecting a change in the polarity of the spin pumping signal. The reversal process is studied in two material systems, Pt/CoFeB and Pt/NiFe, for different aspect ratios. The onset of the switching behavior is indicated by a sharp transition in the spin pumping voltage. At a threshold value of the external field, the switching process changes from partial to full reversal with increasing microwave power. The proposed method provides a simple way to detect microwave assisted magnetization reversal.

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

NASA Astrophysics Data System (ADS)

Ichikawa, O.; Fukuhara, N.; Hata, M.; Nakano, T.; Sugiyama, M.; Shimogaki, Y.; Nakano, Y.

2007-01-01

At InGaP-on-GaAs heterointerface, transition layer is formed during metalorganic vapor phase epitaxy (MOVPE) growth that can affect device properties. Many studies of this transition layer have been done but the characterization methods used are not direct measures of the atomic structure at the heterointerface. In this study, we investigated the abruptness and thickness of the InGaP-on-GaAs transition layers by field-emission Auger electron spectroscopy, by which a depth profile with a resolution of abruptness of 30 Å or below can be obtained. The group V switching position relative to that of In goes deeper into the GaAs with increasing PH 3 supply, suggesting an initial, quick replacement of As atoms with P atoms followed by a slow P diffusion into the bulk GaAs. Changes of abruptness of the As or P profiles at the heterointerface with varying PH 3 supply on the GaAs surface are not observed. Furthermore, we evaluated the effect of the GaAsP-like transition layers on the turn-on voltage of an InGaP emitter HBT. A linear relationship is shown between the shift of the group V switching position and the HBT turn-on voltage, which is consistent with the assumption that current flow decreases at the transition layer. Calculated difference of conduction band energy between InGaP and the transition layer is 0.15 eV for the sample with ordered InGaP and 0.04 eV for disordered InGaP, is consistent with the difference of the band gap energies between ordered and disordered InGaP. Calculated P compositions are 0.52 and 0.35, respectively.

Design of DC-contact RF MEMS switch with temperature stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Junfeng; Nanjing Electronic Devices Institute, Nanjing, 210016; Li, Zhiqun, E-mail: zhiqunli@seu.edu.cn

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C formore » 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.« less

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

Electrophysiology of connection current spikes.

PubMed

Fish, Raymond M; Geddes, Leslie A

2008-12-01

Connection to a 60-Hz or other voltage source can result in cardiac dysrhythmias, a startle reaction, muscle contractions, and a variety of other physiological responses. Such responses can lead to injury, especially if significant ventricular cardiac dysrhythmias occur, or if a person is working at some height above ground and falls as a result of a musculoskeletal response. Physiological reactions are known to relate to intensity and duration of current exposure. The connection current that flows is a function of the applied voltage at the instant of connection, and the electrical impedance encountered by the voltage source in contact with the skin or other body tissues. In this article we describe a rarely investigated phenomenon, namely a contact, or connection, current spike that is many times higher than the steady-state current. This current spike occurs when an electrical connection is made at a non-zero voltage time in a sine wave or other waveform. Such current spikes may occur when electronic or manual switching or connecting of conductors occurs in electronic instrumentation connected to a patient. These findings are relevant to medical devices and instrumentation and to electrical safety in general.

Low mass MEMS/NEMS switch for a substitute of CMOS transistor using single-walled carbon nanotube thin film

NASA Astrophysics Data System (ADS)

Jang, Min-Woo

Power dissipation is a key factor for mobile devices and other low power applications. Complementary metal oxide semiconductor (CMOS) is the dominant integrated circuit (IC) technology responsible for a large part of this power dissipation. As the minimum feature size of CMOS devices enters into the sub 50 nanometer (nm) regime, power dissipation becomes much worse due to intrinsic physical limits. Many approaches have been studied to reduce power dissipation of deeply scaled CMOS ICs. One possible candidate is the electrostatic electromechanical switch, which could be fabricated with conventional CMOS processing techniques. They have critical advantages compared to CMOS devices such as almost zero standby leakage in the off-state due to the absence of a pn junction and a gate oxide, as well as excellent drive current in the on-state due to a metallic channel. Despite their excellent standby power dissipation, the electrostatic MEMS/NEMS switches have not been considered as a viable replacement for CMOS devices due to their large mechanical delay. Moreover, previous literature reveals that their pull-in voltage and switching speed are strongly proportional to each other. This reduces their potential advantage. However, in this work, we theoretically and experimentally demonstrated that the use of single-walled carbon nanotube (SWNT) with very low mass density and strong mechanical properties could provide a route to move off of the conventional trend with respect to the pull-in voltage / switching speed tradeoff observed in the literature. We fabricated 2-terminal fixed- beam switches with aligned composite SWNT thin films. In this work, layer-by-layer (LbL) self-assembly and dielectrophoresis were selected for aligned-composite SWNT thin film deposition. The dense membranes were successfully patterned to form submicron beams by e-beam lithography and oxygen plasma etching. Fixed-fixed beam switches using these membranes successfully operated with approximately 600 psec switching delay and as low as a 3 V dc pull-in. From this we confirmed that the SWNT-based thin films have the potential to make fast MEMS switches with a low operation voltage due to its low mass density and high stiffness. However, the copolymer caused a serious reliability issue and a copolymer-free SWNT film deposition method was developed by replacing positive copolymer with a dispersion of positively functionalized SWNTs. The electrical and physical properties of pure single-walled carbon nanotube thin films deposited through a copolymer-free LbL self-assembly process are then discussed. The film thickness was proportional to the number of dipping cycles. The film resistivity was estimated as 2.19x10-3 Ω-cm after thermal treatments were performed. The estimated specific contact resistance to gold electrodes was 6.33x10-9 Ω-m2 from contact chain measurements. The fabricated 3-terminal MEMS switches using these films functioned as a beam for multiple switching cycles with a 4.5V pull-in voltage, which was operated like a 2-input NAND gate. The SWNT-based thin film switch is promising for a variety of applications to high-end nanoelectronics and high- performance MEMS/NEMS.

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

2014-01-01

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn-off), and lower-magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Adaptive sequential controller

DOEpatents

El-Sharkawi, Mohamed A.; Xing, Jian; Butler, Nicholas G.; Rodriguez, Alonso

1994-01-01

An adaptive sequential controller (50/50') for controlling a circuit breaker (52) or other switching device to substantially eliminate transients on a distribution line caused by closing and opening the circuit breaker. The device adaptively compensates for changes in the response time of the circuit breaker due to aging and environmental effects. A potential transformer (70) provides a reference signal corresponding to the zero crossing of the voltage waveform, and a phase shift comparator circuit (96) compares the reference signal to the time at which any transient was produced when the circuit breaker closed, producing a signal indicative of the adaptive adjustment that should be made. Similarly, in controlling the opening of the circuit breaker, a current transformer (88) provides a reference signal that is compared against the time at which any transient is detected when the circuit breaker last opened. An adaptive adjustment circuit (102) produces a compensation time that is appropriately modified to account for changes in the circuit breaker response, including the effect of ambient conditions and aging. When next opened or closed, the circuit breaker is activated at an appropriately compensated time, so that it closes when the voltage crosses zero and opens when the current crosses zero, minimizing any transients on the distribution line. Phase angle can be used to control the opening of the circuit breaker relative to the reference signal provided by the potential transformer.

Triple voltage dc-to-dc converter and method

DOEpatents

Su, Gui-Jia

2008-08-05

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Polarization and resistive switching behavior of ferroelectric tunnel junctions with transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Li, Tao; Lipatov, Alexey; Sharma, Pankaj; Lee, Hyungwoo; Eom, Chang-Beom; Sinitskii, Alexander; Gruverman, Alexei; Alexei Gruverman Team; Alexander Sinitskii Team; Chang-Beom Eom Team

Transition metal dichalcogenides (TMDs) are emerging 2-dimensional (2D) materials of the MX2 type, where M is a transition metal atom (Mo, W, Ti, Sn, Zr, etc.) and X is a chalcogen atom (S, Se, or Te.). Comparing to graphene, TMDs have a sizable band gap and can be metal, half-metal, semiconductor or superconductor. Their band structures can be tuned by external bias voltage, mechanical force, or light illumination. Their rich physical properties make TMDs potential candidates for a variety of applications in nanoelectronics and optoelectronics. Ferroelectric tunnel junctions (FTJs) are actively studied as a next-generation of non-volatile memory elements. An FTJ comprises a ferroelectric tunnel barrier sandwiched between two electrodes. In this work, we investigate the resistive switching behavior of MoS2/BaTiO3-based FTJs. The ON/OFF ratio can be modulated via electric or mechanical control of the switched polarization fraction opening a possibility of tunable electroresistance effect. Effect of optical illumination on the polarization reversal dynamics has been observed and analyzed based on the polarization-induced modulation of the MoS2 layered electronic properties.

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Zhou, You; Fisher, Christopher J.; Ramanathan, Shriram; Treadway, Jacob P.

2013-05-01

Vanadium dioxide (VO2) is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>103) in both electrically (i.e., by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state, and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz.

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

DOE Office of Scientific and Technical Information (OSTI.GOV)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of themore » one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.« less

Methods, systems and apparatus for controlling operation of two alternating current (AC) machines

DOEpatents

Gallegos-Lopez, Gabriel [Torrance, CA; Nagashima, James M [Cerritos, CA; Perisic, Milun [Torrance, CA; Hiti, Silva [Redondo Beach, CA

2012-06-05

A system is provided for controlling two alternating current (AC) machines via a five-phase PWM inverter module. The system comprises a first control loop, a second control loop, and a current command adjustment module. The current command adjustment module operates in conjunction with the first control loop and the second control loop to continuously adjust current command signals that control the first AC machine and the second AC machine such that they share the input voltage available to them without compromising the target mechanical output power of either machine. This way, even when the phase voltage available to either one of the machines decreases, that machine outputs its target mechanical output power.

Method and system for operating an electric motor

DOEpatents

Gallegos-Lopez, Gabriel; Hiti, Silva; Perisic, Milun

2013-01-22

Methods and systems for operating an electric motor having a plurality of windings with an inverter having a plurality of switches coupled to a voltage source are provided. A first plurality of switching vectors is applied to the plurality of switches. The first plurality of switching vectors includes a first ratio of first magnitude switching vectors to second magnitude switching vectors. A direct current (DC) current associated with the voltage source is monitored during the applying of the first plurality of switching vectors to the plurality of switches. A second ratio of the first magnitude switching vectors to the second magnitude switching vectors is selected based on the monitoring of the DC current associated with the voltage source. A second plurality of switching vectors is applied to the plurality of switches. The second plurality of switching vectors includes the second ratio of the first magnitude switching vectors to the second magnitude switching vectors.

A multi-functional high voltage experiment apparatus for vacuum surface flashover switch research.

PubMed

Zeng, Bo; Su, Jian-cang; Cheng, Jie; Wu, Xiao-long; Li, Rui; Zhao, Liang; Fang, Jin-peng; Wang, Li-min

2015-04-01

A multifunctional high voltage apparatus for experimental researches on surface flashover switch and high voltage insulation in vacuum has been developed. The apparatus is composed of five parts: pulse generating unit, axial field unit, radial field unit, and two switch units. Microsecond damped ringing pulse with peak-to-peak voltage 800 kV or unipolar pulse with maximum voltage 830 kV is generated, forming transient axial or radial electrical field. Different pulse waveforms and field distributions make up six experimental configurations in all. Based on this apparatus, preliminary experiments on vacuum surface flashover switch with different flashover dielectric materials have been conducted in the axial field unit, and nanosecond pulse is generated in the radial field unit which makes a pulse transmission line in the experiment. Basic work parameters of this kind of switch such as lifetime, breakdown voltage are obtained.

Novel switching method for single-phase NPC three-level inverter with neutral-point voltage control

NASA Astrophysics Data System (ADS)

Lee, June-Seok; Lee, Seung-Joo; Lee, Kyo-Beum

2018-02-01

This paper proposes a novel switching method with the neutral-point voltage control in a single-phase neutral-point-clamped three-level inverter (SP-NPCI) used in photovoltaic systems. A proposed novel switching method for the SP-NPCI improves the efficiency. The main concept is to fix the switching state of one leg. As a result, the switching loss decreases and the total efficiency is improved. In addition, it enables the maximum power-point-tracking operation to be performed by applying the proposed neutral-point voltage control algorithm. This control is implemented by modifying the reference signal. Simulation and experimental results provide verification of the performance of a novel switching method with the neutral-point voltage control.

External noise-induced transitions in a current-biased Josephson junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Qiongwei; Xue, Changfeng, E-mail: cfxue@163.com; Tang, Jiashi

We investigate noise-induced transitions in a current-biased and weakly damped Josephson junction in the presence of multiplicative noise. By using the stochastic averaging procedure, the averaged amplitude equation describing dynamic evolution near a constant phase difference is derived. Numerical results show that a stochastic Hopf bifurcation between an absorbing and an oscillatory state occurs. This means the external controllable noise triggers a transition into the non-zero junction voltage state. With the increase of noise intensity, the stationary probability distribution peak shifts and is characterised by increased width and reduced height. And the different transition rates are shown for large andmore » small bias currents.« less

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

New scheme for braiding Majorana fermions.

PubMed

Wu, Long-Hua; Liang, Qi-Feng; Hu, Xiao

2014-12-01

Non-Abelian statistics can be achieved by exchanging two vortices in topological superconductors with each grabbing a Majorana fermion (MF) as zero-energy quasi-particle at the cores. However, in experiments it is difficult to manipulate vortices. In the present work, we propose a way to braid MFs without moving vortices. The only operation required in the present scheme is to turn on and off local gate voltages, which liberates a MF from its original host vortex and transports it along the prepared track. We solve the time-dependent Bogoliubov-de Gennes equation numerically, and confirm that the MFs are protected provided the switching of gate voltages for exchanging MFs are adiabatic, which takes only several nano seconds given reasonable material parameters. By monitoring the time evolution of MF wave-functions, we show that non-Abelian statistics is achieved.

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

30 CFR 75.705-9 - Operating disconnecting or cutout switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Operating disconnecting or cutout switches. 75... Operating disconnecting or cutout switches. Disconnecting or cutout switches on energized high-voltage... insulated and maintained to protect the operator from the voltage to which he is exposed. When such switches...

Using a small hybrid pulse power transformer unit as component of a high-current opening switch for a railgun

NASA Astrophysics Data System (ADS)

Leung, E. M. W.; Bailey, R. E.; Michels, P. H.

1989-03-01

The hybrid pulse power transformer (HPPT) is a unique concept utilizing the ultrafast superconducting-to-normal transition process of a superconductor. When used in the form of a hybrid transformer current-zero switch (HTCS), this creates an approach in which the large, high-power, high-current opening switch in a conventional railgun system can be eliminated. This represents an innovative application of superconductivity to pulsed power conditioning required for the Strategic Defense Initiative (SDI). The authors explain the working principles of a 100-KJ unit capable of switching up to 500 kA at a frequency of 0.5 Hz and with a system efficiency of greater than 90 percent. Circuit analysis using a computer code called SPICE PLUS was used to verify the HTCS concept. This concept can be scaled up to applications in the several mega-ampere levels.

High Voltage, Solid-State Switch for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Prager, James; Miller, Kenneth E.; Slobodov, Ilia

2017-10-01

Eagle Harbor Technologies, Inc. is developing a series stack of solid-state switches to produce a single high voltage switch that can be operated at over 35 kV. During the Phase I program, EHT developed two high voltage switch modules: one with isolated power gate drive and a second with inductively coupled gate drive. These switches were tested at 15 kV and up to 300 A at switching frequencies up to 500 kHz for 10 ms bursts. Robust switching was demonstrated for both IGBTs and SiC MOSFETs. During the Phase II program, EHT will develop a higher voltage switch (>35 kV) that will be suitable for high pulsed and average power applications. EHT will work with LTX to utilize these switches to design, build, and test a pulsed magnetron driver that will be delivered to LTX before the completion of the program. EHT will present data from the Phase I program as well as preliminary results from the start of the Phase II program. With support of DOE SBIR.

First-principles Study of Phonons in Structural Phase Change of Ge-Sb-Te Compounds

NASA Astrophysics Data System (ADS)

Song, Young-Sun; Kim, Jeongwoo; Kim, Minjae; Jhi, Seung-Hoon

Ge-Sb-Te (GST) compounds, exhibiting substantial electrical and optical contrast at extremely fast switching modes, have attracted great attention for application as non-volatile memory devices. Despite extensive studies of GST compounds, the underlying mechanism for fast transitions between amorphous and crystalline phases is yet to be revealed. We study the vibrational property of various GST compounds and the role of nitrogen doping on phase-change processes using first-principles calculations. We find that a certain vibrational mode (Eu) plays a crucial role to determine transition temperatures, and that its frequency depends on the amount of Ge in GST. We also find that the nitrogen doping drives crystalline-amorphous transition at low power consumption modes. In addition, we discuss the effect of the spin-orbit coupling on vibration modes, which is known essential for correct description of the electrical property of GST. Our understanding of phonon modes in GST compounds paves the way for the improving the device performance especially in terms of switching speed and operating voltage.

A PWM transistor inverter for an ac electric vehicle drive

NASA Technical Reports Server (NTRS)

Slicker, J. M.

1981-01-01

A prototype system consisting of closely integrated motor, inverter, and transaxle has been built in order to demonstrate the feasibility of a three-phase ac transistorized inverter for electric vehicle applications. The microprocessor-controlled inverter employs monolithic power transistors to drive an oil-cooled, three-phase induction traction motor at a peak output power of 30 kW from a 144 V battery pack. Transistor safe switching requirements are discussed, and a circuit is presented for recovering trapped snubber inductor energy at transistor turn-off.

A Nonlinear Digital Control Solution for a DC/DC Power Converter

NASA Technical Reports Server (NTRS)

Zhu, Minshao

2002-01-01

A digital Nonlinear Proportional-Integral-Derivative (NPID) control algorithm was proposed to control a 1-kW, PWM, DC/DC, switching power converter. The NPID methodology is introduced and a practical hardware control solution is obtained. The design of the controller was completed using Matlab (trademark) Simulink, while the hardware-in-the-loop testing was performed using both the dSPACE (trademark) rapid prototyping system, and a stand-alone Texas Instruments (trademark) Digital Signal Processor (DSP)-based system. The final Nonlinear digital control algorithm was implemented and tested using the ED408043-1 Westinghouse DC-DC switching power converter. The NPID test results are discussed and compared to the results of a standard Proportional-Integral (PI) controller.

Optimization of Passive Voltage Multipliers for Fast Start-up and Multi-voltage Power Supplies in Electromagnetic Energy Harvesting Systems

NASA Astrophysics Data System (ADS)

Yang, G.; Stark, B. H.; Burrow, S. G.; Hollis, S. J.

2014-11-01

This paper demonstrates the use of passive voltage multipliers for rapid start-up of sub-milliwatt electromagnetic energy harvesting systems. The work describes circuit optimization to make as short as possible the transition from completely depleted energy storage to the first powering-up of an actively controlled switched-mode converter. The dependency of the start-up time on component parameters and topologies is derived by simulation and experimentation. The resulting optimized multiplier design reduces the start-up time from several minutes to 1 second. An additional improvement uses the inherent cascade structure of the voltage multiplier to power sub-systems at different voltages. This multi-rail start-up is shown to reduce the circuit losses of the active converter by 72% with respect to the optimized single-rail system. The experimental results provide insight into the multiplier's transient behaviour, including circuit interactions, in a complete harvesting system, and offer important information to optimize voltage multipliers for rapid start-up.

Experimental Results from a Laser-Triggered, Gas-Insulated, Spark-Gap Switch

NASA Astrophysics Data System (ADS)

Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.

2017-10-01

We are performing experiments on a laser-triggered spark-gap switch with the goal of studying the transition from photoionization to current conduction. The discharge of current through the switch is triggered by a focused 532-nm wavelength beam from a Q-switched Nd:YAG laser with a pulse duration of about 10 ns. The trigger pulse is delivered along the longitudinal axis of the switch, and the focal spot can be placed anywhere along the axis of the 5-mm, gas-insulated gap between the switch electrodes. The switch test bed is designed to support a variety of working gases (e.g., Ar, N2) over a range of pressures. Electrical and optical diagnostics are used to measure switch performance as a function of parameters such as charge voltage, trigger pulse energy, insulating gas pressure, and gas species. A Mach-Zehnder imaging interferometer system operating at 532 nm is being used to obtain interferograms of the discharge plasma in the switch. We are also developing a 1064-nm interferometry diagnostic in an attempt to measure plasma free electron and neutral gas density profiles simultaneously within the switch gap. Results from our most recent experiments will be presented.

Research of an electromagnetically actuated spark gap switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Tianyang; Chen, Dongqun, E-mail: csycdq@163.com; Liu, Jinliang

2013-11-15

As an important part of pulsed power systems, high-voltage and high-current triggered spark gap switch and its trigger system are expected to achieve a compact structure. In this paper, a high-voltage, high-current, and compact electromagnetically actuated spark gap switch is put forward, and it can be applied as a part of an intense electron-beam accelerator (IEBA). A 24 V DC power supply is used to trigger the switch. The characteristics of the switch were measured for N{sub 2} when the gas pressure is 0.10–0.30 MPa. The experimental results showed that the voltage/pressure (V/p) curve of the switch was linear relationship.more » The operating ranges of the switch were 21%–96%, 21%–95%, 21%–95%, 19%–95%, 17%–95%, and 16%–96% of the switch's self-breakdown voltage when the gas pressures were 0.10, 0.14, 0.18, 0.22, 0.26, and 0.30 MPa, respectively. The switch and its trigger system worked steadily and reliably with a peak voltage of 30 kV, a peak current of 60 kA in the IEBA when the pressure of N{sub 2} in the switch was 0.30 MPa.« less

Compensation of voltage drops in solid-state switches used with thermoelectric generators

NASA Technical Reports Server (NTRS)

Shimada, K.

1972-01-01

Seebeck effect solid state switch was developed eliminating thermoelectric generator switch voltage drops. Semiconductor switches were fabricated from materials with large Seebeck coefficients, arranged such that Seebeck potential is generated with such polarity that current flow is aided.

Voltage‐Controlled Switching of Strong Light–Matter Interactions using Liquid Crystals

PubMed Central

Hertzog, Manuel; Rudquist, Per; Hutchison, James A.; George, Jino; Ebbesen, Thomas W.

2017-01-01

Abstract We experimentally demonstrate a fine control over the coupling strength of vibrational light–matter hybrid states by controlling the orientation of a nematic liquid crystal. Through an external voltage, the liquid crystal is seamlessly switched between two orthogonal directions. Using these features, for the first time, we demonstrate electrical switching and increased Rabi splitting through transition dipole moment alignment. The C−Nstr vibration on the liquid crystal molecule is coupled to a cavity mode, and FT‐IR is used to probe the formed vibropolaritonic states. A switching ratio of the Rabi splitting of 1.78 is demonstrated between the parallel and the perpendicular orientation. Furthermore, the orientational order increases the Rabi splitting by 41 % as compared to an isotropic liquid. Finally, by examining the influence of molecular alignment on the Rabi splitting, the scalar product used in theoretical modeling between light and matter in the strong coupling regime is verified. PMID:29155469

On Application of Model Predictive Control to Power Converter with Switching

NASA Astrophysics Data System (ADS)

Zanma, Tadanao; Fukuta, Junichi; Doki, Shinji; Ishida, Muneaki; Okuma, Shigeru; Matsumoto, Takashi; Nishimori, Eiji

This paper concerns a DC-DC converter control. In DC-DC converters, there exist both continuous components such as inductance, conductance and resistance and discrete ones, IGBT and MOSFET as semiconductor switching elements. Such a system can be regarded as a hybrid dynamical system. Thus, this paper presents a dc-dc control technique based on the model predictive control. Specifically, a case in which the load of the dc-dc converter changes from active to sleep is considered. In the case, a control method which makes the output voltage follow to the reference quickly in transition, and the switching frequency be constant in steady state. In addition, in applying the model predictive control to power electronics circuits, the switching characteristic of the device and the restriction condition for protection are also considered. The effectiveness of the proposed method is illustrated by comparing a conventional method through some simulation results.

Series-Connected Buck Boost Regulators

NASA Technical Reports Server (NTRS)

Birchenough, Arthur G.

2005-01-01

A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.

Frequency Invariability of (Pb,La)(Zr,Ti)O₃ Antiferroelectric Thick-Film Micro-Cantilevers.

PubMed

An, Kun; Jin, Xuechen; Meng, Jiang; Li, Xiao; Ren, Yifeng

2018-05-13

Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

Integrally regulated solar array demonstration using an Intel 8080 microprocessor

NASA Technical Reports Server (NTRS)

Petrik, E. J.

1977-01-01

A concept for regulating the voltage of a solar array by using a microprocessor to effect discrete voltage changes was demonstrated. Eight shorting switches were employed to regulate a simulated array at set-point voltages between 10,000 and 15,000 volts. The demonstration showed that the microprocessor easily regulated the solar array output voltage independently of whether or not the switched cell groups were binary sized in voltage. In addition, the microprocessor provided logic memory capability to perform additional tasks such as locating and insolating a faulty switch.

Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Durai, Suresh; Manivannan, Anbarasu

2016-11-01

Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature of enabling a rapid threshold-switching at a critical voltage known as the threshold voltage as validated by an instantaneous response of steep current rise from an amorphous off to on state is achieved within 250 picoseconds and this is followed by a slower current rise leading to crystallization. Also, we demonstrate that the extraordinary nature of threshold-switching dynamics in AgInSbTe cells is independent to the rate of applied voltage unlike other chalcogenide-based phase change materials exhibiting the voltage dependent transient switching characteristics. Furthermore, numerical solutions of time-dependent conduction process validate the experimental results, which reveal the electronic nature of threshold-switching. These findings of steep threshold-switching of ‘sub-50 ps delay time’, opens up a new way for achieving high-speed non-volatile memory for mainstream computing.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

On the influence of additive and multiplicative noise on holes in dissipative systems.

PubMed

Descalzi, Orazio; Cartes, Carlos; Brand, Helmut R

2017-05-01

We investigate the influence of noise on deterministically stable holes in the cubic-quintic complex Ginzburg-Landau equation. Inspired by experimental possibilities, we specifically study two types of noise: additive noise delta-correlated in space and spatially homogeneous multiplicative noise on the formation of π-holes and 2π-holes. Our results include the following main features. For large enough additive noise, we always find a transition to the noisy version of the spatially homogeneous finite amplitude solution, while for sufficiently large multiplicative noise, a collapse occurs to the zero amplitude solution. The latter type of behavior, while unexpected deterministically, can be traced back to a characteristic feature of multiplicative noise; the zero solution acts as the analogue of an absorbing boundary: once trapped at zero, the system cannot escape. For 2π-holes, which exist deterministically over a fairly small range of values of subcriticality, one can induce a transition to a π-hole (for additive noise) or to a noise-sustained pulse (for multiplicative noise). This observation opens the possibility of noise-induced switching back and forth from and to 2π-holes.

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

NASA Technical Reports Server (NTRS)

Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.

2016-01-01

In this paper, a computational study is presented of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magneto-mechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.13; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping. For the cases considered, optimal resistive shunt damping performed considerably better than both voltage- and shunt-controlled stiffness switching.

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

Low pressure switches and magnetic switches were tested as possible replacements for the high pressure switches currently used on Experimental Test Accelerator and Advanced Test Accelerator. When the low pressure switch is used with a low impedance transmission line, runaway electrons form a pinched electron beam which damages the anode. The use of the low pressure switch as the first switch in the pulsed power chain was tested; i.e., the switch would be used to connect a charged capacitor across the primary winding of a step up transformer. An inductor with a saturating core is connected in series so that, initially, there is a large inductive voltage drop. As a result, there is small voltage across the switch. By the time the inductor core saturates, the switch has developed sufficient ionization so that the switch voltage remains small, even with peak current, and an electron beam is not produced.

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

NASA Technical Reports Server (NTRS)

Petrick, David J. (Inventor)

2017-01-01

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

High Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide

PubMed Central

Singh, P. K.; Sonkusale, S.

2017-01-01

This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies. PMID:28102306

Enhanced zero-bias Majorana peak in the differential tunneling conductance of disordered multisubband quantum-wire/superconductor junctions.

PubMed

Pientka, Falko; Kells, Graham; Romito, Alessandro; Brouwer, Piet W; von Oppen, Felix

2012-11-30

A recent experiment Mourik et al. [Science 336, 1003 (2012)] on InSb quantum wires provides possible evidence for the realization of a topological superconducting phase and the formation of Majorana bound states. Motivated by this experiment, we consider the signature of Majorana bound states in the differential tunneling conductance of multisubband wires. We show that the weight of the Majorana-induced zero-bias peak is strongly enhanced by mixing of subbands, when disorder is added to the end of the quantum wire. We also consider how the topological phase transition is reflected in the gap structure of the current-voltage characteristic.

Method and apparatus for electromagnetically braking a motor

NASA Technical Reports Server (NTRS)

Davis, Donald R. (Inventor); Radford, Nicolaus A (Inventor); Permenter, Frank Noble (Inventor); Parsons, Adam H (Inventor); Mehling, Joshua S (Inventor)

2011-01-01

An electromagnetic braking system and method is provided for selectively braking a motor using an electromagnetic brake having an electromagnet, a permanent magnet, a rotor assembly, and a brake pad. The brake assembly applies when the electromagnet is de-energized and releases when the electromagnet is energized. When applied the permanent magnet moves the brake pad into frictional engagement with a housing, and when released the electromagnet cancels the flux of the permanent magnet to allow a leaf spring to move the brake pad away from the housing. A controller has a DC/DC converter for converting a main bus voltage to a lower braking voltage based on certain parameters. The converter utilizes pulse-width modulation (PWM) to regulate the braking voltage. A calibrated gap is defined between the brake pad and permanent magnet when the brake assembly is released, and may be dynamically modified via the controller.

Distributed control system for parallel-connected DC boost converters

DOEpatents

Goldsmith, Steven

2017-08-15

The disclosed invention is a distributed control system for operating a DC bus fed by disparate DC power sources that service a known or unknown load. The voltage sources vary in v-i characteristics and have time-varying, maximum supply capacities. Each source is connected to the bus via a boost converter, which may have different dynamic characteristics and power transfer capacities, but are controlled through PWM. The invention tracks the time-varying power sources and apportions their power contribution while maintaining the DC bus voltage within the specifications. A central digital controller solves the steady-state system for the optimal duty cycle settings that achieve a desired power supply apportionment scheme for a known or predictable DC load. A distributed networked control system is derived from the central system that utilizes communications among controllers to compute a shared estimate of the unknown time-varying load through shared bus current measurements and bus voltage measurements.

Analysis and Control of Pulse-Width Modulated AC to DC Voltage Source Converters.

NASA Astrophysics Data System (ADS)

Wu, Rusong

The pulse width modulated AC to DC voltage source converter is comprehensively analyzed in the thesis. A general mathematical model of the converter is first established, which is discontinuous, time-variant and non-linear. The following three techniques are used to obtain closed form solutions: Fourier analysis, transformation of reference frame and small signal linearization. Three models, namely, a steady-state DC model, a low frequency small signal AC model and a high frequency model, are consequently developed. Finally, three solution sets, namely, the steady-state solution, various dynamic transfer functions and the high frequency harmonic components, are obtained from the three models. Two control strategies, the Phase and Amplitude Control (PAC) and a new proposed strategy, Predicted Current Control with a Fixed Switching Frequency (PCFF), are investigated. Based on the transfer functions derived from the above mentioned analysis, regulators for a closed-loop control are designed. A prototype circuit is built to experimentally verify the theoretical predictions. The analysis and experimental results show that both strategies produce nearly sinusoidal line current with unity power factor on the utility side in both rectifying and regenerating operations and concurrently provide a regulated DC output voltage on the load side. However the proposed PCFF control has a faster and improved dynamic response over the PAC control. Moreover it is also easier to be implemented. Therefore, the PCFF control is preferable to the PAC control. As an example of application, a configuration of variable DC supply under PCFF control is proposed. The quasi-optimal dynamic response obtained shows that the PWM AC to DC converter lays the foundation for building a four-quadrant, fast-dynamic system, and the PCFF control is an effective strategy for improving dynamic performances not only as applied to the AC to DC converter, but also as applied to the DC to DC chopper or other circuits.

Experimental Study for Reduction of Noises and Vibrations in Hermetic Type Compressor

NASA Astrophysics Data System (ADS)

Sano, Kiyoshi; Kawahara, Sadao; Akazawa, Teruyuki; Ishii, Noriaki

A brushless DC motor with a permanent magnet rotor has been adopted for a scroll compressor for domestic-use air-conditioners because of a demand for compressor high efficiency. A waveform of the driving voltage in the inverter power supply unit is chopped by the PWM signal. Its duty ratio is increased/decreased to control the DC voltage in order to provide a wide range of rotation frequencies for the compressor. The driving voltage includes the carrier frequency and its harmonic components, which produce an electro-magnetic force in the moter, resulting in high electro-magnetic noise. In the present report, the author clarifies the relationships between the noise and the waveform of driving voltage and frequency response function of the motor. A method to improve the frequency response function by changing the stator shape in order to reduce electro-magnetic noise is presented. Subsequently, the influence on electro-magnetic noise from the waveform of driving voltage is examined. Furthermore, the electro-magnetic noises during inverter driving of an induction motor are presented.

Unity PF current-source rectifier based on dynamic trilogic PWM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao Wang; Boon-Teck Ooi

1993-07-01

One remaining step in perfecting the stand-along, unity power factor, regulated current-source PWM rectifier is to reduce cost, by bringing the 12-valve converter (consisting of three single-phase full bridges that operate with two-level or bilogic PWM) to the six-valve bridge. However, the six-valve topology requires a three-level or trilogic PWM strategy that can handle feedback signals. This feature was not available until now. The paper describes a general method of translating three-phase bilogic PWM signals to three-phase trilogic PWM signals. The method of translation retains the characteristics of the bilogic PWM, including the frequency bandwidth. Experiments show that the trilogicmore » PWM signals produced by the method can not only handle stabilizing feedback signals but also signals for active filtering.« less

Logo2PWM: a tool to convert sequence logo to position weight matrix.

PubMed

Gao, Zhen; Liu, Lu; Ruan, Jianhua

2017-10-03

position weight matrix (PWM) and sequence logo are the most widely used representations of transcription factor binding site (TFBS) in biological sequences. Sequence logo - a graphical representation of PWM, has been widely used in scientific publications and reports, due to its easiness of human perception, rich information, and simple format. Different from sequence logo, PWM works great as a precise and compact digitalized form, which can be easily used by a variety of motif analysis software. There are a few available tools to generate sequence logos from PWM; however, no tool does the reverse. Such tool to convert sequence logo back to PWM is needed to scan a TFBS represented in logo format in a publication where the PWM is not provided or hard to be acquired. A major difficulty in developing such tool to convert sequence logo to PWM is to deal with the diversity of sequence logo images. We propose logo2PWM for reconstructing PWM from a large variety of sequence logo images. Evaluation results on over one thousand logos from three sources of different logo format show that the correlation between the reconstructed PWMs and the original PWMs are constantly high, where median correlation is greater than 0.97. Because of the high recognition accuracy, the easiness of usage, and, the availability of both web-based service and stand-alone application, we believe that logo2PWM can readily benefit the study of transcription by filling the gap between sequence logo and PWM.

Precision zero-home locator

DOEpatents

Stone, William J.

1986-01-01

A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

Precision zero-home locator

DOEpatents

Stone, W.J.

1983-10-31

A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

HOLLOTRON switch for megawatt lightweight space inverters

NASA Technical Reports Server (NTRS)

Poeschel, R. L.; Goebel, D. M.; Schumacher, R. W.

1991-01-01

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

Electrical switching and oscillations in vanadium dioxide

NASA Astrophysics Data System (ADS)

Pergament, Alexander; Velichko, Andrey; Belyaev, Maksim; Putrolaynen, Vadim

2018-05-01

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10 × 10 nm, Fmax can reach the value of 300 MHz at a film thickness of 20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts 13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1-5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

NASA Astrophysics Data System (ADS)

Li, Peng; You, Zheng; Cui, Tianhong

2012-12-01

An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Otsuka, Shintaro; Takeda, Ryouta; Furuya, Saeko; Shimizu, Tomohiro; Shingubara, Shouso; Iwata, Nobuyuki; Watanabe, Tadataka; Takano, Yoshiki; Takase, Kouichi

2012-06-01

We have investigated the current-voltage characteristics of a resistive switching memory (ReRAM), especially the reproducibility of the switching voltage between an insulating state and a metallic state. The poor reproducibility hinders the practical use of this memory. According to a filament model, the variation of the switching voltage may be understood in terms of the random choice of filaments with different conductivities and lengths at each switching. A limitation of the number of conductive paths is expected to lead to the suppression of the variation of switching voltage. In this study, two strategies for the limitation have been proposed using an anodic porous alumina (APA). The first is the reduction of the number of conductive paths by restriction of the contact area between the top electrodes and the insulator. The second is the lowering of the resistivity of the insulator, which makes it possible to grow filaments with the same characteristics by electrochemical treatments using a pulse-electroplating technique.

Load insensitive electrical device. [power converters for supplying direct current at one voltage from a source at another voltage

NASA Technical Reports Server (NTRS)

Schwarz, F. C. (Inventor)

1974-01-01

A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

Stability of Triggering of the Switch with Sharply Non-Uniform Electric Field at the Electrode with Negative Potential

NASA Astrophysics Data System (ADS)

Kovalchuk, B. M.; Zherlitsyn, A. A.; Kumpyak, E. V.

2017-12-01

Results of investigations into a two-electrode high-pressure gas switch with sharply non-uniform field at the electrode with negative potential operating in the self-breakdown regime with pulsed charging of a highvoltage capacitive energy storage for 100 μs to voltage exceeding 200 kV are presented. It is demonstrated that depending on the air pressure and the gap length, the corona-streamer discharge, whose current increases with voltage, arises in the switch at a voltage of 0.2-0.3 of the self-breakdown voltage. At the moment of switch self-breakdown, the corona-streamer discharge goes over to one or several spark channels. The standard deviation of the triggering moment can be within 1.5 μs, which corresponds to the standard deviation of the self-breakdown voltage less than 2 kV. The voltage stability can be better than 1.5%.

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

NASA Astrophysics Data System (ADS)

Manca, M.; Wang, G.; Kuroda, T.; Shree, S.; Balocchi, A.; Renucci, P.; Marie, X.; Durnev, M. V.; Glazov, M. M.; Sakoda, K.; Mano, T.; Amand, T.; Urbaszek, B.

2018-04-01

In III-V semiconductor nano-structures, the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics are widely studied, but little is known about the initialization mechanisms. Here, we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X+ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage Vg. Variation of ΔVg on the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 μeV (-22%) to +10 μeV (+7%) although the X+ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X+ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X+ lifetime which is on the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Improvement of SET variability in TaO x based resistive RAM devices

NASA Astrophysics Data System (ADS)

Schönhals, Alexander; Waser, Rainer; Wouters, Dirk J.

2017-11-01

Improvement or at least control of variability is one of the key challenges for Redox based resistive switching memory technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching (CS) mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the CS mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability.

Development of longitudinally excited CO2 laser

NASA Astrophysics Data System (ADS)

Masroon, N. S.; Tanaka, M.; Tei, M.; Uno, K.; Tsuyama, M.; Nakano, H.

2018-05-01

Simple, compact, and affordable discharged-pumped CO2 laser controlled by a fast high voltage solid state switch has been developed. In this study, longitudinal excitation scheme has been adapted for simple configuration. In the longitudinal excitation scheme, the discharge is produced along the direction of the laser axis, and the electrodes are well separated with a small discharge cross-section. Triggered spark gap switch is usually used to switch out the high voltage because of simple and low cost. However, the triggered spark gap operates in the arc mode and suffer from recovery problem causing a short life time and low efficiency for high repetition rate operation. As a result, there is now considerable interest in replacing triggered spark gap switch with solid state switches. Solid state switches have significant advantages compared to triggered spark gap switch which include longer service lifetime, low cost and stable high trigger pulse. We have developed simple and low cost fast high voltage solid state switch that consists of series connected-MOSFETs. It has been installed to the longitudinally excited CO2 laser to realize the gap switch less operation. Characteristics of laser oscillation by varying the discharge length, charging voltage, capacitance and gas pressure have been evaluated. Longer discharge length produce high power of laser oscillation. Optimum charging voltage and gas pressure were existed for longitudinally excited CO2 laser.

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Tunable dielectric response, resistive switching, and unconventional transport in SrTiO3

NASA Astrophysics Data System (ADS)

Mikheev, Evgeny

The first section of this thesis discusses integration of SR TiO3 grown by molecular beam epitaxy (MBE) in vertical device structures. One target application is as a tunable dielectric. Parallel plate capacitors based on epitaxial Pt(001) bottom electrodes and (Ba,Sr)TiO 3 dielectric layers grown by MBE are demonstrated. Optimization of structural quality of the vertical stack is shown to produce very low dielectric loss combined with very high tunability of the dielectric constant by DC bias. This results in considerable improvement of common figures of merit for varactor performance in comparison to previous reports. Another target application for transition metals oxides is in resistive switching memories, which are based on the hysteretic current-voltage response observed in many oxide-based Schottky junctions and capacitors. A study on the role of metal/oxide interface quality is presented. In particular, the use of epitaxial Pt(001) as Schottky contacts to Nb:SRTiO 3 is shown to suppress resistive switching hysteresis by eliminating unintentional contributions to interface capacitance. Such uncontrolled factors are discussed as a probable root cause for poor reproducibility in resistive switching memories, currently a ubiquitous challenge in the field. Potential routes towards stabilizing reproducible switching through intentional control of defect densities in high-quality structures are discussed, including a proof of concept demonstration using Schottky junctions incorporating intentionally non-stoichiometric SRTiO3 interlayers grown by MBE. The second section of this thesis is concerned with unconventional electronic transport in SRTiO3. A systematic description of scattering mechanisms will be presented for three related material systems: uniformly-doped SRTiO3, two-dimensional electron liquids (2DEL) at SRTiO3/RTiO 3 interfaces (R = Gd, Sm) and confined 2DELs in RTiO3/SRTiO3/ RTiO3 quantum wells. In particular, the prevalence of a well-defined T2 scattering rate in doped SRTiO3 will be discussed as being incompatible with its traditional assignment as electron-electron scattering in a Fermi liquid. In the case of ultrathin SRTiO3 quantum wells bound by RTiO3, evidence will be presented for the existence of a quantum critical point. This refers to a quantum phase transition at zero temperature towards an ordered phase in SRTiO 3. This transition is driven by increasing confinement of the 2DEL, with a critical point located at the 5 SrO layer thickness of SRTiO 3. It is manifested in anomalous temperature exponents of the power law resistivity. Additionally, a well-defined trend for the separation of the Hall and longitudinal scattering rates will be presented, analogously to a similar effect observed in the normal state of high-Tc superconductors. In particular, a unique pattern of residual scattering separation was documented, consistent with a quantum critical correction to the Hall lifetime that is divergent at the quantum critical point.

Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process

PubMed Central

Jo, Yongcheol; Jung, Kyooho; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Hong, Jinpyo; Lee, Jeon-Kook; Im, Hyunsik

2014-01-01

This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I–V) characteristics are observed within the RS voltage window of −2.5 to +1.9 V, with good endurance and retention properties. As the bias voltage increases further beyond 4 V under a forward bias, a forming process occurs resulting in irreversible RS mode transformation from bipolar to unipolar mode. This switching mode transformation is a direct consequence of thermally activated Ti out-diffusion from a Ti adhesion layer. Transition metal Ti effectively out-diffuses through the loose Pt electrode layer at high substrate temperatures, leading to the unintended formation of a thin titanium oxide (TiOx where x < 2) layer between the Pt electrode and the SZO:Cr layer as well as additional Ti atoms in the SZO:Cr layer. Cross-sectional scanning electron microscopy, transmission electron microscopy and Auger electron spectroscopy depth-profile measurements provided apparent evidence of the Ti out-diffusion phenomenon. We propose that the out-diffusion-induced additional Ti atoms in the SZO:Cr layer contributes to the creation of the metallic filamentary channels. PMID:25483325

Picosecond High Pressure Gas Switch Experiment

DTIC Science & Technology

1993-06-01

the calculated pulse waveform for a much higher voltage and pressure switch . Also, a discussion of the modifications made on an existing pulse...s 80 8 ~ 60 J 40 .. : ~--~: __ ~’----~-~ 0.1 10 100 1000 Frequency Figure 7. Output switch recovery. Conclusion The high- pressure switch has...effective in matching experimental results, and should thus be useful in the design of high-voltage and pressure switch configurations

Novel control system of the high-voltage IGBT-switch

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Mamontov, Y. I.; Gusev, A. I.; Pedos, M. S.

2017-05-01

HV solid-state switch control circuit was developed and tested. The switch was made with series connection IGBT-transistors. The distinctive feature of the circuit is an ability to fine-tune the switching time of every transistor. Simultaneous switching provides balancing of the dynamic voltage at all switch elements. A separate control board switches on and off every transistor. On and off signals from the main conductor are sent to the board by current pulses of different polarity. A positive pulse provides the transistor switch-on, while a negative pulse provides their switch-off. The time interval between pulses defines the time when the switch is turned on. The minimum time when the switch is turned on equals to a few microseconds, while the maximum time is not limited. This paper shows the test results of 4 kV switch prototype. The switch was used to produce rectangular pulses of a microsecond range under resistive load. The possibility to generate the damped harmonic oscillations was also tested. On the basis of this approach, positive testing results open up a possibility to design switches under an operating voltage of tens kilovolts.

Piezoelectric MEMS switch to activate event-driven wireless sensor nodes

NASA Astrophysics Data System (ADS)

Nogami, H.; Kobayashi, T.; Okada, H.; Makimoto, N.; Maeda, R.; Itoh, T.

2013-09-01

We have developed piezoelectric microelectromechanical systems (MEMS) switches and applied them to ultra-low power wireless sensor nodes, to monitor the health condition of chickens. The piezoelectric switches have ‘S’-shaped piezoelectric cantilevers with a proof mass. Since the resonant frequency of the piezoelectric switches is around 24 Hz, we have utilized their superharmonic resonance to detect chicken movements as low as 5-15 Hz. When the vibration frequency is 4, 6 and 12 Hz, the piezoelectric switches vibrate at 0.5 m s-2 and generate 3-5 mV output voltages with superharmonic resonance. In order to detect such small piezoelectric output voltages, we employ comparator circuits that can be driven at low voltages, which can set the threshold voltage (Vth) from 1 to 31 mV with a 1 mV increment. When we set Vth at 4 mV, the output voltages of the piezoelectric MEMS switches vibrate below 15 Hz with amplitudes above 0.3 m s-2 and turn on the comparator circuits. Similarly, by setting Vth at 5 mV, the output voltages turn on the comparator circuits with vibrations above 0.4 m s-2. Furthermore, setting Vth at 10 mV causes vibrations above 0.5 m s-2 that turn on the comparator circuits. These results suggest that we can select small or fast chicken movements to utilize piezoelectric MEMS switches with comparator circuits.

Method and apparatus for controlling current in inductive loads such as large diameter coils

DOEpatents

Riveros, Carlos A.

1981-01-01

A method and apparatus for controlling electric current in loads that are essentially inductive, such that sparking and "ringing" current problems are reduced or eliminated. The circuit apparatus employs a pair of solid state switches (each of which switch may be an array of connected or parallel solid state switching devices such as transistors) and means for controlling those switches such that a power supply supplying two d.c. voltages (e.g. positive 150 volts d.c. and negative 150 volts d.c.) at low resistance may be connected across an essentially inductive load (e.g. a 6 gauge wire loop one hundred meters in diameter) alternatively and such that the first solid state switch is turned off and the second is turned on such that both are not on at the same time but the first turned on and the other on in less time than the inductive time constant (L/R) so that the load is essentially always presented with a low resistance path across its input. In this manner a steady AC current may be delivered to the load at a frequency desired. Shut-off problems are avoided by gradually shortening the period of switching to less than the time constant so that the maximum energy contained in the inductive load is reduced to approximately zero and dissipated in the inherent resistance. The invention circuit may be employed by adjusting the timing of switching to deliver a desired waveform (such as sinusoidal) to the load.

Interface Design Description for the Multi-Mode Magnetic Detection System

DTIC Science & Technology

2008-11-21

400001E D/A Spare H 16 0000 48 4000020 PWM Piezo A 16 6230 Formatted Table 3MDS IDD 0BSB2-03-C-0388-01 Rev I 24 21 November 2008 Relative Base...Address (bytes) FPGA Address Item Size (bits) Definition Units/LSB Value/Other 50 4000022 PWM Piezo B 16 6230 52 4000024 PWM Piezo C 16...6230 54 4000026 PWM Piezo D 16 6230 56 4000028 PWM Piezo E 16 6230 58 400002A PWM Piezo F 16 6230 60 400002C Set the starting place for temp sweep 16

Optical zero-differential pressure switch and its evaluation in a multiple pressure measuring system

NASA Technical Reports Server (NTRS)

Powell, J. A.

1977-01-01

The design of a clamped-diaphragm pressure switch is described in which diaphragm motion is detected by a simple fiber-optic displacement sensor. The switch was evaluated in a pressure measurement system where it detected the zero crossing of the differential pressure between a static test pressure and a tank pressure that was periodically ramped from near zero to fullscale gage pressure. With a ramping frequency of 1 hertz and a full-scale tank pressure of 69 N/sq cm gage (100 psig), the switch delay was as long as 2 milliseconds. Pressure measurement accuracies were 0.25 to 0.75 percent of full scale. Factors affecting switch performance are also discussed.

Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

NASA Astrophysics Data System (ADS)

Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

Digital current regulator for proportional electro-hydraulic valves with unknown disturbance rejection.

PubMed

Canuto, Enrico; Acuña-Bravo, Wilber; Agostani, Marco; Bonadei, Marco

2014-07-01

Solenoid current regulation is well-known and standard in any proportional electro-hydraulic valve. The goal is to provide a wide-band transfer function from the reference to the measured current, thus making the solenoid a fast and ideal force actuator within the limits of the power supplier. The power supplier is usually a Pulse Width Modulation (PWM) amplifier fixing the voltage bound and the Nyquist frequency of the regulator. Typical analog regulators include three main terms: a feedforward channel, a proportional feedback channel and the electromotive force compensation. The latter compensation may be accomplished by integrative feedback. Here the problem is faced through a model-based design (Embedded Model Control), on the basis of a wide-band embedded model of the solenoid which includes the effect of eddy currents. To this end model parameters must be identified. The embedded model includes a stochastic disturbance dynamics capable of estimating and correcting the electromotive contribution together with parametric uncertainty, variability and state dependence. The embedded model which is fed by the measured current and the supplied voltage becomes a state predictor of the controllable and disturbance dynamics. The control law combines reference generator, state feedback and disturbance rejection to dispatch the PWM amplifier with the appropriate duty cycle. Modeling, identification and control design are outlined together with experimental result. Comparison with an existing analog regulator is also provided. © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

Low noise charge ramp electrometer

DOEpatents

Morgan, John P.; Piper, Thomas C.

1992-01-01

An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit.

Low noise charge ramp electrometer

DOEpatents

Morgan, J.P.; Piper, T.C.

1992-10-06

An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit. 2 figs.

Electroformed silicon nitride based light emitting memory device

NASA Astrophysics Data System (ADS)

Anutgan, Tamila; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram

2017-07-01

The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching

ERIC Educational Resources Information Center

Masrur, M. A.

2009-01-01

This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

NASA Astrophysics Data System (ADS)

Kurebayashi, Daichi; Nomura, Kentaro

2016-10-01

We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

Electrical switching in Sb doped Al23Te77 glasses

NASA Astrophysics Data System (ADS)

Pumlianmunga; Ramesh, K.

2017-08-01

Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

[Development of residual voltage testing equipment].

PubMed

Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

2014-07-01

For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

Direct model-based predictive control scheme without cost function for voltage source inverters with reduced common-mode voltage

NASA Astrophysics Data System (ADS)

Kim, Jae-Chang; Moon, Sung-Ki; Kwak, Sangshin

2018-04-01

This paper presents a direct model-based predictive control scheme for voltage source inverters (VSIs) with reduced common-mode voltages (CMVs). The developed method directly finds optimal vectors without using repetitive calculation of a cost function. To adjust output currents with the CMVs in the range of -Vdc/6 to +Vdc/6, the developed method uses voltage vectors, as finite control resources, excluding zero voltage vectors which produce the CMVs in the VSI within ±Vdc/2. In a model-based predictive control (MPC), not using zero voltage vectors increases the output current ripples and the current errors. To alleviate these problems, the developed method uses two non-zero voltage vectors in one sampling step. In addition, the voltage vectors scheduled to be used are directly selected at every sampling step once the developed method calculates the future reference voltage vector, saving the efforts of repeatedly calculating the cost function. And the two non-zero voltage vectors are optimally allocated to make the output current approach the reference current as close as possible. Thus, low CMV, rapid current-following capability and sufficient output current ripple performance are attained by the developed method. The results of a simulation and an experiment verify the effectiveness of the developed method.

Compact high voltage solid state switch

DOEpatents

Glidden, Steven C.

2003-09-23

A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

NASA Technical Reports Server (NTRS)

Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.

2016-01-01

This paper presents a computational study of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magnetomechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.25; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping.

Performance optimization of a photovoltaic chain conversion by the PWM control

NASA Astrophysics Data System (ADS)

Rezoug, M. R.; Chenni, R.

2017-02-01

The interest of the research technique of maximum power point tracking, exposed by this article, lays in the fact of work instantly on the real characteristic of the photovoltaic module. This work is based on instantaneous measurements of its terminals' current & voltage as well as the exploitation of the characteristic "Power - Duty Cycle" to define rapidly the Duty cycle in which power reaches its maximum value. To ensure instantaneous tracking of the point of maximum power, we use "DC/DC Converter" based on "Pulse Wave Modulation's (PWM) Command" controlled by an algorithm implanted in a microcontroller's memory. This algorithm responds to the quick changes in climate (sunlight and temperature). To identify the control parameters "VPV & IPV" at any change in operating conditions, sensors are projected. this algorithm applied to the Duty cycle of the static converter enables the control of power supplied by the photovoltaic generator thanks to oscillatory movement around the MPP. Our article highlights the importance of this technique which lays in its simplicity and performance in changing climatic conditions. This efficiency is confirmed by experimental tests and this technique will improve its predecessors.

A three-level support method for smooth switching of the micro-grid operation model

NASA Astrophysics Data System (ADS)

Zong, Yuanyang; Gong, Dongliang; Zhang, Jianzhou; Liu, Bin; Wang, Yun

2018-01-01

Smooth switching of micro-grid between the grid-connected operation mode and off-grid operation mode is one of the key technologies to ensure it runs flexible and efficiently. The basic control strategy and the switching principle of micro-grid are analyzed in this paper. The reasons for the fluctuations of the voltage and the frequency in the switching process are analyzed from views of power balance and control strategy, and the operation mode switching strategy has been improved targeted. From the three aspects of controller’s current inner loop reference signal, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level security strategy for smooth switching of micro-grid operation mode is proposed. From the three aspects of controller’s current inner loop reference signal tracking, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level strategy for smooth switching of micro-grid operation mode is proposed. At last, it is proved by simulation that the proposed control strategy can make the switching process smooth and stable, the fluctuation problem of the voltage and frequency has been effectively improved.

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Spin-selective coupling to Majorana zero modes in mixed singlet and triplet superconducting nanowires

NASA Astrophysics Data System (ADS)

Paul, Ganesh C.; Saha, Arijit; Das, Sourin

2018-05-01

We theoretically investigate the transport properties of a quasi-one-dimensional ferromagnet-superconductor junction where the superconductor consists of mixed singlet and triplet pairings. We show that the relative orientation of the Stoner field (h ˜) in the ferromagnetic lead and the d vector of the superconductor acts like a on-off switch for the zero bias conductance of the device. In the regime, where triplet pairing amplitude dominates over the singlet counterpart (topological phase), a pair of Majorana zero modes appear at each end of the superconducting part of the nanowire. When h ˜ is parallel or antiparallel to the d vector, transport gets completely blocked due to blockage in pairing while, when h ˜ and d are perpendicular to each other, the zero energy two terminal differential conductance spectra exhibits sharp transition from 4 e2/h to 2 e2/h as the magnetization strength in the lead becomes larger than the chemical potential indicating the spin-selective coupling of a pair of Majorana zero modes to the lead.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeloiza, Eddy C.; Burgos, Rolando P.

A step-down AC/AC converter for use in an electric distribution system includes at least one chopper circuit for each one of a plurality of phases of the AC power, each chopper circuit including a four-quadrant switch coupled in series between primary and secondary sides of the chopper circuit and a current-bidirectional two-quadrant switch coupled between the secondary side of the chopper circuit and a common node. Each current-bidirectional two-quadrant switch is oriented in the same direction, with respect to the secondary side of the corresponding chopper circuit and the common node. The converter further includes a control circuit configured tomore » pulse-width-modulate control inputs of the switches, to convert a first multiphase AC voltage at the primary sides of the chopper circuits to a second multiphase AC voltage at the secondary sides of the chopper circuits, the second multiphase AC voltage being lower in voltage than the first multiphase AC voltage.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milkov, Mihail M.

A comparator circuit suitable for use in a column-parallel single-slope analog-to-digital converter comprises a comparator, an input voltage sampling switch, a sampling capacitor arranged to store a voltage which varies with an input voltage when the sampling switch is closed, and a local ramp buffer arranged to buffer a global voltage ramp applied at an input. The comparator circuit is arranged such that its output toggles when the buffered global voltage ramp exceeds the stored voltage. Both DC- and AC-coupled comparator embodiments are disclosed.

Optically triggered high voltage switch network and method for switching a high voltage

DOEpatents

El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

A Lyapunov based approach to energy maximization in renewable energy technologies

NASA Astrophysics Data System (ADS)

Iyasere, Erhun

This dissertation describes the design and implementation of Lyapunov-based control strategies for the maximization of the power captured by renewable energy harnessing technologies such as (i) a variable speed, variable pitch wind turbine, (ii) a variable speed wind turbine coupled to a doubly fed induction generator, and (iii) a solar power generating system charging a constant voltage battery. First, a torque control strategy is presented to maximize wind energy captured in variable speed, variable pitch wind turbines at low to medium wind speeds. The proposed strategy applies control torque to the wind turbine pitch and rotor subsystems to simultaneously control the blade pitch and tip speed ratio, via the rotor angular speed, to an optimum point at which the capture efficiency is maximum. The control method allows for aerodynamic rotor power maximization without exact knowledge of the wind turbine model. A series of numerical results show that the wind turbine can be controlled to achieve maximum energy capture. Next, a control strategy is proposed to maximize the wind energy captured in a variable speed wind turbine, with an internal induction generator, at low to medium wind speeds. The proposed strategy controls the tip speed ratio, via the rotor angular speed, to an optimum point at which the efficiency constant (or power coefficient) is maximal for a particular blade pitch angle and wind speed by using the generator rotor voltage as a control input. This control method allows for aerodynamic rotor power maximization without exact wind turbine model knowledge. Representative numerical results demonstrate that the wind turbine can be controlled to achieve near maximum energy capture. Finally, a power system consisting of a photovoltaic (PV) array panel, dc-to-dc switching converter, charging a battery is considered wherein the environmental conditions are time-varying. A backstepping PWM controller is developed to maximize the power of the solar generating system. The controller tracks a desired array voltage, designed online using an incremental conductance extremum-seeking algorithm, by varying the duty cycle of the switching converter. The stability of the control algorithm is demonstrated by means of Lyapunov analysis. Representative numerical results demonstrate that the grid power system can be controlled to track the maximum power point of the photovoltaic array panel in varying atmospheric conditions. Additionally, the performance of the proposed strategy is compared to the typical maximum power point tracking (MPPT) method of perturb and observe (P&O), where the converter dynamics are ignored, and is shown to yield better results.

Temperature-stabilized, narrowband tunable fiber-Bragg gratings for matched-filter receiver

NASA Astrophysics Data System (ADS)

Roth, Jeffrey M.; Kummer, Joseph W.; Minch, Jeffrey R.; Malinsky, Bryan G.; Scalesse, Vincent; Walther, Frederick G.

2017-02-01

We report on a 1550-nm matched filter based on a pair of fiber Bragg gratings (FBGs) that is actively stabilized over temperature. The filter is constructed of a cascaded pair of athermally-packaged FBGs. The tandem FBG pair produces an aggregate 3-dB bandwidth of 3.9-GHz that is closely matched to a return-to-zero, 2.880-GHz differential-phase-shift-keyed optical waveform. The FBGs comprising the filter are controlled in wavelength using a custom-designed, pulse-width modulation (PWM) heater controller. The controllers allow tuning of the FBGs over temperature to compensate and cancel out native temperature dependence of the athermal FBG (AFBG) package. Two heaters are bonded to each FBG device, one on each end. One heater is a static offset that biases the FBG wavelength positively. The second heater is a PWM controller that actively moves the FBG wavelength negatively. A temperature sensor measures the FBGs' temperature, and a feed-forward control loop adjusts the PWM signal to hold the wavelength within a desired range. This stabilization technique reduces the device's native temperature dependence from approximately 0.65 pm/°C to 0.06 pm/°C, improving the temperature stability by tenfold, while retaining some control for poten- tial long-term drifts. The technique demonstrates that the FBGs can be held to +/-1.5 pm (+/-188 MHz) of the target wavelength over a 0 to +50°C temperature range. The temperature-stabilized FBGs are integrated into a low-noise, optical pre-amplifier that operates over a wide temperature range for a laser communication system.

Sequential power-up circuit

DOEpatents

Kronberg, James W.

1992-01-01

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable.

Methods/Labor Standards Application Program - Phase IV

DTIC Science & Technology

1985-01-01

Engine Platform a. Pressure switch b. Compressor motor c. Voltage regulator d. Open and clean generator exciter and main windings S3 . Main Collector...clean motors b. Slip rings Gantry #3 Annual: S2. Engine Platform a. Pressure switch b. Compressor motor Voltage regulator d. Open and clean generator...Travel Motors Open and clean motorsa. b. Slip rings Gantry #4 S2 . S3. S4 . S5 . Engine Platform a. Pressure switch b. Compressor motor Voltage regulator

Artificial Neural Identification and LMI Transformation for Model Reduction-Based Control of the Buck Switch-Mode Regulator

NASA Astrophysics Data System (ADS)

Al-Rabadi, Anas N.

2009-10-01

This research introduces a new method of intelligent control for the control of the Buck converter using newly developed small signal model of the pulse width modulation (PWM) switch. The new method uses supervised neural network to estimate certain parameters of the transformed system matrix [Ã]. Then, a numerical algorithm used in robust control called linear matrix inequality (LMI) optimization technique is used to determine the permutation matrix [P] so that a complete system transformation {[B˜], [C˜], [Ẽ]} is possible. The transformed model is then reduced using the method of singular perturbation, and state feedback control is applied to enhance system performance. The experimental results show that the new control methodology simplifies the model in the Buck converter and thus uses a simpler controller that produces the desired system response for performance enhancement.

Development and optimization of a matrix converter supplying an electronic ballast - UV lamp system for water sterilization

NASA Astrophysics Data System (ADS)

Bokhtache, Aicha Aissa; Zegaoui, Abdallah; Aillerie, Michel; Djahbar, Abdelkader; Hemici, Kheira

2018-05-01

Electronic ballasts dedicated to discharge lamps allow improving the quality of radiation by operating at high frequency. In the present work, the use of a single-phase direct converter with a matrix structure for supplying a low-pressure mercury-argon UVC lamp for water sterilization is proposed. The structure of the converter is based on two switching cells allowing the realization of a fully controllable bidirectional switches. The advantages of such a matrix topology include the delivered of a sinusoidal waveform current with a controllable power factor close to unity, variable in amplitude and frequency. In order to obtain the desired amplitude and frequency, a PWM control was associated in the current realization. Finally, a linear adjustment of the lamp arc current was warranted by using of a PI regulator.

Thermal Transport in Nd-doped CeCoIn5

NASA Astrophysics Data System (ADS)

Kim, Duk Y.; Lin, Shi-Zeng; Weickert, Franziska; Rosa, P. F. S.; Bauer, Eric D.; Ronning, Filip; Thompson, J. D.; Movshovich, Roman

Heavy-fermion superconductor CeCoIn5 shows spin-density-wave (SDW) magnetic order in its superconducting state when a high magnetic field is applied. In this Q-phase, the antiferromagnetic order has a single ordering wave vector, and switches its orientation very sharply as magnetic field is rotated within the ab -plane around the [100] (anti-nodal) direction. This hypersensitivity induces a sharp jump of the thermal conductivity. Recently, the SDW with the same ordering wave vector was observed in Nd-doped CeCoIn5 in zero magnetic field. We have measured the thermal conductivity of 5% Nd-doped CeCoIn5 in the magnetic field rotating within the ab -plane. The anisotropy is significantly smaller in the doped material, and the switching transition is much broader. The superconducting transition near Hc 2 is first order, as for the pure CeCoIn5, which indicates the Pauli limited superconductivity. We gratefully acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Modified Perfect Harmonics Cancellation Control of a Grid Interfaced SPV Power Generation

NASA Astrophysics Data System (ADS)

Singh, B.; Shahani, D. T.; Verma, A. K.

2015-03-01

This paper deals with a grid interfaced solar photo voltaic (SPV) power generating system with modified perfect harmonic cancellation (MPHC) control for power quality improvement in terms of mitigation of the current harmonics, power factor correction, control of point of common coupling (PCC) voltage with reactive power compensation and load balancing in a three phase distribution system. The proposed grid interfaced SPV system consists of a SPV array, a dc-dc boost converter and a voltage source converter (VSC) used for the compensation of other connected linear and nonlinear loads at PCC. The reference grid currents are estimated using MPHC method and control signals are derived by using pulse width modulation (PWM) current controller of VSC. The SPV power is fed to the common dc bus of VSC and dc-dc boost converter using maximum power point tracking (MPPT). The dc link voltage of VSC is regulated by using dc voltage proportional integral (PI) controller. The analysis of the proposed SPV power generating system is carried out under dc/ac short circuit and severe SPV-SX and SPV-TX intrusion.

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Reference voltage calculation method based on zero-sequence component optimisation for a regional compensation DVR

NASA Astrophysics Data System (ADS)

Jian, Le; Cao, Wang; Jintao, Yang; Yinge, Wang

2018-04-01

This paper describes the design of a dynamic voltage restorer (DVR) that can simultaneously protect several sensitive loads from voltage sags in a region of an MV distribution network. A novel reference voltage calculation method based on zero-sequence voltage optimisation is proposed for this DVR to optimise cost-effectiveness in compensation of voltage sags with different characteristics in an ungrounded neutral system. Based on a detailed analysis of the characteristics of voltage sags caused by different types of faults and the effect of the wiring mode of the transformer on these characteristics, the optimisation target of the reference voltage calculation is presented with several constraints. The reference voltages under all types of voltage sags are calculated by optimising the zero-sequence component, which can reduce the degree of swell in the phase-to-ground voltage after compensation to the maximum extent and can improve the symmetry degree of the output voltages of the DVR, thereby effectively increasing the compensation ability. The validity and effectiveness of the proposed method are verified by simulation and experimental results.

Reducing Ripple In A Switching Voltage Regulator

NASA Technical Reports Server (NTRS)

Paulkovich, John; Rodriguez, G. Ernest

1994-01-01

Ripple voltage in output of switching voltage regulator reduced substantially by simple additional circuitry adding little to overall weight and size of regulator. Heretofore, additional filtering circuitry needed to obtain comparable reductions in ripple typically as large and heavy as original regulator. Current opposing ripple current injected into filter capacitor.

Phase transition transistors based on strongly-correlated materials

NASA Astrophysics Data System (ADS)

Nakano, Masaki

2013-03-01

The field-effect transistor (FET) provides electrical switching functions through linear control of the number of charges at a channel surface by external voltage. Controlling electronic phases of condensed matters in a FET geometry has long been a central issue of physical science. In particular, FET based on a strongly correlated material, namely ``Mott transistor,'' has attracted considerable interest, because it potentially provides gigantic and diverse electronic responses due to a strong interplay between charge, spin, orbital and lattice. We have investigated electric-field effects on such materials aiming at novel physical phenomena and electronic functions originating from strong correlation effects. Here we demonstrate electrical switching of bulk state of matter over the first-order metal-insulator transition. We fabricated FETs based on VO2 with use of a recently developed electric-double-layer transistor technique, and found that the electrostatically induced carriers at a channel surface drive all preexisting localized carriers of 1022 cm-3 even inside a bulk to motion, leading to bulk carrier delocalization beyond the electrostatic screening length. This non-local switching of bulk phases is achieved with just around 1 V, and moreover, a novel non-volatile memory like character emerges in a voltage-sweep measurement. These observations are apparently distinct from those of conventional FETs based on band insulators, capturing the essential feature of collective interactions in strongly correlated materials. This work was done in collaboration with K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura. This work was supported by the Japan Society for the Promotion of Science (JSAP) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors

NASA Astrophysics Data System (ADS)

Nutku, Ferhat; Erol, Ayse; Arikan, M. Cetin; Ergun, Yuksel

2014-11-01

In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of the zero-bias offsets were studied on mesa structures shaped in different diameters. Furthermore, effect of mesa diameter on J-V characteristics was investigated. The temperature, initial bias voltage and voltage sweep rate dependence of the zero-bias offsets were explained by a qualitative model, which is based on a RC equivalent circuit of the quantum well infrared photodetector.

State Recognition of High Voltage Isolation Switch Based on Background Difference and Iterative Search

NASA Astrophysics Data System (ADS)

Xu, Jiayuan; Yu, Chengtao; Bo, Bin; Xue, Yu; Xu, Changfu; Chaminda, P. R. Dushantha; Hu, Chengbo; Peng, Kai

2018-03-01

The automatic recognition of the high voltage isolation switch by remote video monitoring is an effective means to ensure the safety of the personnel and the equipment. The existing methods mainly include two ways: improving monitoring accuracy and adopting target detection technology through equipment transformation. Such a method is often applied to specific scenarios, with limited application scope and high cost. To solve this problem, a high voltage isolation switch state recognition method based on background difference and iterative search is proposed in this paper. The initial position of the switch is detected in real time through the background difference method. When the switch starts to open and close, the target tracking algorithm is used to track the motion trajectory of the switch. The opening and closing state of the switch is determined according to the angle variation of the switch tracking point and the center line. The effectiveness of the method is verified by experiments on different switched video frames of switching states. Compared with the traditional methods, this method is more robust and effective.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Wang, C. Y.

2017-09-01

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

Slippery interfaces: lubrication of director and helix rotation motions (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yamamoto, Jun; Sakatsuji, Waki; Nishiyama, Isa

2017-02-01

Anchoring effects on the polymer films in the liquid crystal (LC) display devices plays key role to create the restoring force to the black state. However, the chiral materials with spontaneous helix, such as deformed helix mode in SmC* (DH-FLC) or the polymer stabilized blue phase (PSChBP), can recover black state by rewinding motion of the helix itself. We have invented the principle and design of slippery interfaces, which has zero anchoring force for attached LC molecules on the interfaces, and confirmed the drastic reduction of driving voltage in DH-FLC mode of SmC* (<1 order) keeping the fast switching response (tau 50 micro sec). We have reported the lateral slippery interfaces consist of the phase separated liquid phases created by tran-cis isomerization of doped azo dye. It is not enough to the complete transmission of the light(I/I0 1) by applying the typical driving voltage ( 1.0V/micro m) for current IPS panels. It is also problem that slippery interface become effective only just below the I-SmC phase transition temperature (TIC-T<20°). Here, we report new type of the vertical slippery interface realized by the spin coated swollen azo-LC gel films on the glass substrates. Under UV irradiation, trans-cis isomerization of the azo-dye co-polymerized in the azo-LC gel film, induces the vertical slippery interfaces by the disordering effect. Since the co-polymerized azo-dye cannot be dissolved into LC, the disordering effect is completely localized in the interface between swollen azo-LC gel and bulk SmC* material. Then the slippery interfaces can be stabilized over wide temperature range. We greatly improve the reduction of the driving voltage, I/Io=1, 1.0V/micro m for rather slow change of the driving voltage (tau 1msec 2.5msec pulse), I/I0=0.6, 1.5V/micro m for fast change (tau 50 micro sec, 250 micro sec pulse) by lubrication of intra and inter helix C-director rotation motions.

Up-and-down chopper circuit

DOEpatents

Goffeau, Jacques R.

1979-01-01

An improved Up-and-Down Chopper Circuit is provided which is useful for voltage regulation in a bi-directional DC power system. In the down mode, power is switched from a DC power source to a lower voltage energy storing load while in the up mode stored energy in the load is transferred to the higher voltage source. The system uses Darlington transistor switches in a conventional connection. The improvement relates to circuit additions to eliminate the effects of inter-electrode capacitance inherent with this Darlington transistor switching arrangement.

MOSFET Power Controller

NASA Technical Reports Server (NTRS)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

Ionic Liquid Gating Control of RKKY Interaction in FeCoB/Ru/FeCoB and (Pt/Co) 2/Ru/(Co/Pt) 2 Multilayers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Qu; Wang, Lei; Zhou, Ziyao

To overcome the fundamental challenge of the weak natural response of antiferromagnetic materials under a magnetic field, voltage manipulation of antiferromagnetic interaction is developed to realize ultrafast, high-density, and power efficient antiferromagnetic spintronics. Here, we report a low voltage modulation of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction via ionic liquid gating in synthetic antiferromagnetic multilayers of FeCoB/Ru/FeCoB and (Pt/Co) 2/Ru/(Co/Pt) 2. At room temperature, the distinct voltage control of transition between antiferromagnetic and ferromagnetic ordering is realized and up to 80% of perpendicular magnetic moments manage to switch with a small-applied voltage bias of 2.5 V. We related this ionic liquid gating-induced RKKYmore » interaction modification to the disturbance of itinerant electrons inside synthetic antiferromagnetic heterostructure and the corresponding change of its Fermi level. Voltage tuning of RKKY interaction may enable the next generation of switchable spintronics between antiferromagnetic and ferromagnetic modes with both fundamental and practical perspectives.« less

Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

NASA Astrophysics Data System (ADS)

Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

2017-12-01

We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

Zero field reversal probability in thermally assisted magnetization reversal

NASA Astrophysics Data System (ADS)

Prasetya, E. B.; Utari; Purnama, B.

2017-11-01

This paper discussed about zero field reversal probability in thermally assisted magnetization reversal (TAMR). Appearance of reversal probability in zero field investigated through micromagnetic simulation by solving stochastic Landau-Lifshitz-Gibert (LLG). The perpendicularly anisotropy magnetic dot of 50×50×20 nm3 is considered as single cell magnetic storage of magnetic random acces memory (MRAM). Thermally assisted magnetization reversal was performed by cooling writing process from near/almost Curie point to room temperature on 20 times runs for different randomly magnetized state. The results show that the probability reversal under zero magnetic field decreased with the increase of the energy barrier. The zero-field probability switching of 55% attained for energy barrier of 60 k B T and the reversal probability become zero noted at energy barrier of 2348 k B T. The higest zero-field switching probability of 55% attained for energy barrier of 60 k B T which corespond to magnetif field of 150 Oe for switching.

Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

NASA Astrophysics Data System (ADS)

Barra, Anthony; Domann, John; Kim, Ki Wook; Carman, Greg

2018-03-01

A method to control antiferromagnetism using voltage-induced strain is proposed and theoretically examined. Voltage-induced magnetoelastic anisotropy is shown to provide sufficient torque to switch an antiferromagnetic domain 90° either from out of plane to in plane or between in-plane axes. Numerical results indicate that strain-mediated antiferromagnetic switching can occur in an 80-nm nanopatterned disk at frequencies approaching 1 THz but that the switching speed heavily depends on the system's mechanical design. Furthermore, the energy cost to induce magnetic switching is only 450 aJ, indicating that magnetoelastic control of antiferromagnetism is substantially more energy efficient than other approaches.

Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

NASA Astrophysics Data System (ADS)

Sakamoto, Toshitsugu; Tada, Munehiro; Tsuji, Yukihide; Makiyama, Hideki; Hasegawa, Takumi; Yamamoto, Yoshiki; Okanishi, Shinobu; Banno, Naoki; Miyamura, Makoto; Okamoto, Koichiro; Iguchi, Noriyuki; Ogasahara, Yasuhiro; Oda, Hidekazu; Kamohara, Shiro; Yamagata, Yasushi; Sugii, Nobuyuki; Hada, Hiromitsu

2015-04-01

We developed an atom-switch read-only memory (ROM) fabricated on silicon-on-thin-buried-oxide (SOTB) for use in a low-power microcontroller for the first time. An atom switch with a low programming voltage and large ON/OFF conductance ratio is suitable for low-power nonvolatile memory. The atom-switch ROM using an SOTB transistor uses a 0.34-1.2 V operating voltage and 12 µA/MHz active current (or 4.5 µW/MHz active power). Furthermore, the sleep current is as low as 0.4 µA when a body bias voltage is applied to the SOTB.

Pulsed laser-deposited VO2 thin films on Pt layers

NASA Astrophysics Data System (ADS)

Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh; Roger, Sylvain; Autret-Lambert, Cécile; Okimura, Kunio

2013-03-01

VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

PubMed

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Sequential power-up circuit

DOEpatents

Kronberg, J.W.

1992-06-02

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable. 2 figs.

Closed-loop torque feedback for a universal field-oriented controller

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Doncker, R.W.A.A.; King, R.D.; Sanza, P.C.

A torque feedback system is employed in a universal field-oriented (UFO) controller to tune a torque-producing current command and a slip frequency command in order to achieve robust torque control of an induction machine even in the event of current regulator errors and during transitions between pulse width modulated (PWM) and square wave modes of operation. 1 figure.

Closed-loop torque feedback for a universal field-oriented controller

DOEpatents

De Doncker, R.W.A.A.; King, R.D.; Sanza, P.C.; Haefner, K.B.

1992-11-24

A torque feedback system is employed in a universal field-oriented (UFO) controller to tune a torque-producing current command and a slip frequency command in order to achieve robust torque control of an induction machine even in the event of current regulator errors and during transitions between pulse width modulated (PWM) and square wave modes of operation. 1 figure.

Closed-loop torque feedback for a universal field-oriented controller

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Doncker, Rik W. A. A.; King, Robert D.; Sanza, Peter C.

A torque feedback system is employed in a universal field-oriented (UFO) controller to tune a torque-producing current command and a slip frequency command in order to achieve robust torque control of an induction machine even in the event of current regulator errors and during transitions between pulse width modulated (PWM) and square wave modes of operation.

MTPA control of mechanical sensorless IPMSM based on adaptive nonlinear control.

PubMed

Najjar-Khodabakhsh, Abbas; Soltani, Jafar

2016-03-01

In this paper, an adaptive nonlinear control scheme has been proposed for implementing maximum torque per ampere (MTPA) control strategy corresponding to interior permanent magnet synchronous motor (IPMSM) drive. This control scheme is developed in the rotor d-q axis reference frame using adaptive input-output state feedback linearization (AIOFL) method. The drive system control stability is supported by Lyapunov theory. The motor inductances are online estimated by an estimation law obtained by AIOFL. The estimation errors of these parameters are proved to be asymptotically converged to zero. Based on minimizing the motor current amplitude, the MTPA control strategy is performed by using the nonlinear optimization technique while considering the online reference torque. The motor reference torque is generated by a conventional rotor speed PI controller. By performing MTPA control strategy, the generated online motor d-q reference currents were used in AIOFL controller to obtain the SV-PWM reference voltages and the online estimation of the motor d-q inductances. In addition, the stator resistance is online estimated using a conventional PI controller. Moreover, the rotor position is detected using the online estimation of the stator flux and online estimation of the motor q-axis inductance. Simulation and experimental results obtained prove the effectiveness and the capability of the proposed control method. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Parameter optimization for transitions between memory states in small arrays of Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rezac, Jacob D.; Imam, Neena; Braiman, Yehuda

Coupled arrays of Josephson junctions possess multiple stable zero voltage states. Such states can store information and consequently can be utilized for cryogenic memory applications. Basic memory operations can be implemented by sending a pulse to one of the junctions and studying transitions between the states. In order to be suitable for memory operations, such transitions between the states have to be fast and energy efficient. Here in this article we employed simulated annealing, a stochastic optimization algorithm, to study parameter optimization of array parameters which minimizes times and energies of transitions between specifically chosen states that can be utilizedmore » for memory operations (Read, Write, and Reset). Simulation results show that such transitions occur with access times on the order of 10–100 ps and access energies on the order of 10 -19–5×10 -18 J. Numerical simulations are validated with approximate analytical results.« less

Transient, polarity-dependent dielectric response in a twisted nematic liquid crystal under very low frequency excitation.

PubMed

Krishnamurthy, K S

2015-09-01

The electric Freedericksz transition is a second-order quadratic effect, which, in a planarly aligned nematic liquid crystal layer, manifests above a threshold field as a homogeneous symmetric distortion with maximum director-tilt in the midplane. We find that, upon excitation by a low frequency (<0.2Hz) square-wave field, the instability becomes spatially and temporally varying. This is demonstrated using calamitic liquid crystals, initially in the 90°-twisted planar configuration. The distortion occurs close to the negative electrode following each polarity switch and, for low-voltage amplitudes, decays completely in time. We use the elastically favorable geometry of Brochard-Leger walls to establish the location of maximum distortion. Thus, at successive polarity changes, the direction of extension of both annular and open walls switches between the alignment directions at the two substrates. For high voltages, this direction is largely along the midplane director, while remaining marginally oscillatory. These results are broadly understood by taking into account the time-varying and inhomogeneous field conditions that prevail soon after the polarity reverses. Polarity dependence of the instability is traced to the formation of intrinsic double layers that lead to an asymmetry in field distribution in the presence of an external bias. Momentary field elevation near the negative electrode following a voltage sign reversal leads to locally enhanced dielectric and gradient flexoelectric torques, which accounts for the surface-like phenomenon observed at low voltages. These spatiotemporal effects, also found earlier for other instabilities, are generic in nature.

Resistive and Ferroelectric-Domain Switching in Multiferroic BiFeO3 Films

NASA Astrophysics Data System (ADS)

Ramirez, J. G.; Arango, I. C.; Gomez, M. F.; Dominguez, C.; Sulekar, S.; Cardona, A.; Trastoy, J.; Nino, J. C.; Schuller, I. K.; Gomez, M. E.

Resistive switching (RS) in oxides has attracted much attention due to its potential application for nonvolatile memory and neuromorphic computing devices. Here we study the voltage-induced RS mechanisms in metal/multiferroic/semiconductor (Au/BiFeO3/Nb:SrTiO3) thin film vertical devices. We found switching with RON and ROFF ratios as big as 0.16 at voltages starting at +/- 2V. Further voltage increase produced an intensification of the RS effects, until dielectric breakdown was reached. Interestingly, the voltage at which the RS effect appears coincides with the coercive voltage of the ferroelectric polarization in similar BiFeO3 films, as measured by piezoelectric force microscopy. This suggests that the primary RS mechanism is the ferroelectric switching. Impedance spectroscopy measurements show filamentary contributions after ferroelectric saturation, possible due to voltage-induced movement of charge defects across the device and therefore suggesting an additional RS mechanism. Work supported by: Univalle CI 7999; FAPA at Uniandes; Colciencias 120471250659 and 120424054303. J.T. acknowledges the support from the Fundación Areces (Spain); AFOSR and DoD for a Vannevar Bush Fellowship.

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Ovonic switching in tin selenide thin films. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Baxter, C. R.

1974-01-01

Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

NASA Astrophysics Data System (ADS)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch.

PubMed

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF 6 /N 2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF 6 /N 2 mixture ratio on switch performance was explored. The experimental results show that when the SF 6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

Power Electronics for a Miniaturized Arcjet

NASA Technical Reports Server (NTRS)

Pinero, Luis R.; Bowers, Glen E.

1997-01-01

A 0.3 kW Power Processing Unit (PPU) was designed, tested on resistive loads, and then integrated with a miniaturized arcjet. The main goal of the design was to minimize size and mass while maintaining reasonable efficiency. In order to obtain the desired reductions in mass, simple topologies and control methods were considered. The PPU design incorporates a 50 kHz, current-mode-control, pulse-width-modulated (PWM), push-pull topology. An input voltage of 28 +/- 4V was chosen for compatibility with typical unregulated low voltage busses anticipated for smallsats. An efficiency of 0.90 under nominal operating conditions was obtained. The component mass of the PPU was 0.475 kg and could be improved by optimization of the output filter design. The estimated mass for a flight PPU based on this design is less than a kilogram.

Series resonance inverter with triggered vacuum gaps

NASA Astrophysics Data System (ADS)

Damstra, Geert C.; Zhang, X.

1994-05-01

Series resonance inverters based on semi-conductor switching elements are well-known and have a wide range of application, mainly for lower voltages. For high voltage application many switching elements have to be put in series to obtain sufficient blocking voltage. Voltage grinding and multiple gate control elements are needed. There is much experience with the triggered vacuum gaps as high voltage/high current single shot elements, for example in reignition circuits for synthetic circuit breaker tests. These elements have a blocking voltage of 50 - 100 kV and are triggerable by a light fiber control device. A prototype inverter has been developed that generates 0.1 Hz, 30 kV AC voltages with a flat top for tests on cables and capacitors of many micro farads fed from a low voltage supply of about 600 V. Only two TVG elements are needed to switch the resonant circuit alternatively on the positive or negative supply. The resonant circuit itself consists of the capacitance of the testobject and a high quality inductor that determines the frequency and the peak current of the voltage reversing process.

Organic Bistable Memory Switching Phenomena in Squarylium-Dye Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Kushida, Masahito; Inomata, Hisao; Miyata, Hiroshi; Harada, Kieko; Saito, Kyoichi; Sugita, Kazuyuki

2003-06-01

We have investigated the relationship between the switching phenomena and H-like aggregates in squarylium-dye Langmuir-Blodgett (SQ LB) films. The current-voltage characteristics of SQ LB films sandwiched between the top gold electrode and the bottom aluminum electrode indicated conductance switching phenomena below the temperature of 100°C but not at 140°C. Current densities suddenly increased at switching voltages between 2 and 4 V. The switching voltage increased as the temperature increased between room temperature and 100°C. Current densities were 50-100 μA/cm2 in a low-impedance state (ON state). A high-impedance state (OFF state) can be recovered by applying a reverse bias, and therefore, these bistable devices are ideal for memory applications. The dependence of conductance switching phenomena and ultraviolet-visible absorption spectra on annealing temperatures was studied. The results revealed that conductance switching phenomena were caused by the presence of H-like aggregates in the SQ LB films.

Numerical Simulation of Liquid Metal RF MEMS Switch Based on EWOD

NASA Astrophysics Data System (ADS)

Liu, Tingting; Gao, Yang; Yang, Tao; Guo, Huihui

2018-03-01

Conventional RF MEMS switches rely on metal-to-dielectric or metal-to-metal contacts. Some problems in the “solid-solid” contact, such as contact degradation, signal bounce and poor reliability, can be solved by using “liquid-solid” contact. The RF MEMS switch based on liquid metal is characterized by small contact resistance, no moving parts, high reliability and long life. Using electrowetting-on-dielectric (EWOD) way to control the movement of liquid metal in the RF MEMS switch, to achieve the “on” and “off” of the switch. In this paper, the electrical characteristics and RF characteristics of RF MEMS switches are simulated by fluid mechanics software FLUENT and electromagnetic simulation software HFSS. The effects of driving voltage, switching time, dielectric layer, hydrophobic layer material and thickness, switching channel height on the RF characteristics are studied. The results show that to increase the external voltage to the threshold voltage of 58V, the liquid metal began to move, and the switching time from “off” state to “on” state is 16ms. In the 0~20GHz frequency range, the switch insertion loss is less than 0.28dB, isolation is better than 23.32dB.

A Developmental Shift from Positive to Negative Connectivity in Human Amygdala-Prefrontal Circuitry

PubMed Central

Gee, Dylan G.; Humphreys, Kathryn L.; Flannery, Jessica; Goff, Bonnie; Telzer, Eva H.; Shapiro, Mor; Hare, Todd A.; Bookheimer, Susan Y.; Tottenham, Nim

2013-01-01

Recent human imaging and animal studies highlight the importance of frontoamygdala circuitry in the regulation of emotional behavior and its disruption in anxiety-related disorders. While tracing studies have suggested changes in amygdala-cortical connectivity through the adolescent period in rodents, less is known about the reciprocal connections within this circuitry across human development, when these circuits are being fine-tuned and substantial changes in emotional control are observed. The present study examined developmental changes in amygdala-prefrontal circuitry across the ages of 4 to 22 years using task-based functional magnetic resonance imaging (fMRI). Results suggest positive amygdala-prefrontal connectivity in early childhood that switches to negative functional connectivity during the transition to adolescence. Amygdala-mPFC functional connectivity was significantly positive (greater than zero) among participants younger than ten, whereas functional connectivity was significantly negative (less than zero) among participants ten years and older, over and above the effect of amygdala reactivity. The developmental switch in functional connectivity was paralleled by a steady decline in amygdala reactivity. Moreover, the valence switch might explain age-related improvement in task performance and a developmentally normative decline in anxiety. Initial positive connectivity followed by a valence shift to negative connectivity provides a neurobiological basis for regulatory development and may present novel insight into a more general process of developing regulatory connections. PMID:23467374

High voltage switch triggered by a laser-photocathode subsystem

DOEpatents

Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

2013-01-08

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

Ultralow-voltage design of graphene PN junction quantum reflective switch transistor

NASA Astrophysics Data System (ADS)

Sohier, Thibault; Yu, Bin

2011-05-01

We propose the concept of a graphene-based quantum reflective switch (QRS) for low-power logic application. With the unique electronic properties of graphene, a tilted PN junction is used to implement logic switch function with 103 ON/OFF ratio. Carriers are reflected on an electrostatically induced potential step with strong incidence-angle-dependency due to the widening of classically forbidden energies. Optimized design of the device for ultralow-voltage operating has been conducted. The device is constantly ON with a turning-off gate voltage around 180 mV using thin HfO2 as the gate dielectric. The results suggest a class of logic switch devices operating with micropower dissipation.

Predictive control strategies for wind turbine system based on permanent magnet synchronous generator.

PubMed

Maaoui-Ben Hassine, Ikram; Naouar, Mohamed Wissem; Mrabet-Bellaaj, Najiba

2016-05-01

In this paper, Model Predictive Control and Dead-beat predictive control strategies are proposed for the control of a PMSG based wind energy system. The proposed MPC considers the model of the converter-based system to forecast the possible future behavior of the controlled variables. It allows selecting the voltage vector to be applied that leads to a minimum error by minimizing a predefined cost function. The main features of the MPC are low current THD and robustness against parameters variations. The Dead-beat predictive control is based on the system model to compute the optimum voltage vector that ensures zero-steady state error. The optimum voltage vector is then applied through Space Vector Modulation (SVM) technique. The main advantages of the Dead-beat predictive control are low current THD and constant switching frequency. The proposed control techniques are presented and detailed for the control of back-to-back converter in a wind turbine system based on PMSG. Simulation results (under Matlab-Simulink software environment tool) and experimental results (under developed prototyping platform) are presented in order to show the performances of the considered control strategies. Copyright © 2015 ISA. Published by Elsevier Ltd. All rights reserved.

Circularly polarized zero-phonon transitions of vacancies in diamond at high magnetic fields

NASA Astrophysics Data System (ADS)

Braukmann, D.; Glaser, E. R.; Kennedy, T. A.; Bayer, M.; Debus, J.

2018-05-01

We study the circularly polarized photoluminescence of negatively charged (NV-) and neutral (NV0) nitrogen-vacancy ensembles and neutral vacancies (V0) in diamond crystals exposed to magnetic fields of up to 10 T. We determine the orbital and spin Zeeman splitting as well as the energetic ordering of their ground and first-excited states. The spin-triplet and -singlet states of the NV- are described by an orbital Zeeman splitting of about 9 μ eV /T , which corresponds to a positive orbital g -factor of gL=0.164 under application of the magnetic field along the (001) and (111) crystallographic directions, respectively. The zero-phonon line (ZPL) of the NV- singlet is defined as a transition from the 1E' states, which are split by gLμBB , to the 1A1 state. The energies of the zero-phonon triplet transitions show a quadratic dependence on intermediate magnetic field strengths, which we attribute to a mixing of excited states with nonzero orbital angular momentum. Moreover, we identify slightly different spin Zeeman splittings in the ground (gs) and excited (es) triplet states, which can be expressed by a deviation between their spin g -factors: gS ,es=gS ,gs+Δ g with values of Δ g =0.014 and 0.029 in the (001) and (111) geometries, respectively. The degree of circular polarization of the NV- ZPLs depends significantly on the temperature, which is explained by an efficient spin-orbit coupling of the excited states mediated through acoustic phonons. We further demonstrate that the sign of the circular polarization degree is switched under rotation of the diamond crystal. A weak Zeeman splitting similar to Δ g μBB measured for the NV- ZPLs is also obtained for the NV0 zero-phonon lines, from which we conclude that the ground state is composed of two optically active states with compensated orbital contributions and opposite spin-1/2 momentum projections. The zero-phonon lines of the V0 show Zeeman splittings and degrees of the circular polarization with opposite signs. The magnetophotoluminescence data indicate that the electron transition from the T12 states to the 1A ground state defines the zero-phonon emission at 1.674 eV, while the T12→1E transition is responsible for the zero-phonon line at 1.666 eV. The T12 (1E ) states are characterized by an orbital Zeeman splitting with gL=0.071 (0.128).