Effect of annealing atmosphere on properties of Cu2ZnSn(S,Se)4 thin films

NASA Astrophysics Data System (ADS)

Xue, Yuming; Yu, Bingbing; Li, Wei; Feng, Shaojun; Wang, Yukun; Huang, Shengming; Zhang, Chao; Qiao, Zaixiang

2017-12-01

Earth-abundant Cu2ZnSn(S,Se)4(CZTSSe) thin film photovoltaic absorber layers were fabricated by co-evaporated Cu, ZnS, SnS and Se sources in a vacuum chamber followed by annealing at tubular furnace for 30 min at 550 °C. In this paper, we investigated the metal elements with stoichiometric ratio film to study the effect of annealing conditions of Se, SnS + Se, S and SnS + S atmosphere on the structure, surface morphological, optical and electrical properties of Cu2ZnSn(S,Se)4 thin films respectively. These films were characterized by Inductively Coupled Plasma-Mass Spectrometer, scanning electron microscopy, X-ray diffraction to investigate the composition, morphological and crystal structural properties. The grain size of samples were found to increase after annealing. XRD patterns confirmed the formation of pure polycrystalline CZTSSe thin films at S atmosphere, the optical band gaps are 1.02, 1.05, 1.23, 1.35 eV for Se, SnS + Se, SnS + S and S atmosphere respectively.

Electronic Structure and Optical Properties of Cu2ZnGeSe4 : First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

NASA Astrophysics Data System (ADS)

Choi, S. G.; Park, J.-S.; Donohue, A. L.; Christensen, S. T.; To, B.; Beall, C.; Wei, S.-H.; Repins, I. L.

2015-11-01

Cu2ZnGeSe4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric function ɛ =ɛ1+i ɛ2 spectrum of polycrystalline Cu2ZnGeSe4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peak shapes and relative intensities between experimental spectra and the calculated ɛ data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. The complex refractive index N =n +i k , normal-incidence reflectivity R , and absorption coefficients α are calculated from the modeled ɛ spectrum, which are also compared with those of Cu2ZnSnSe4 . The spectral features for Cu2ZnGeSe4 appear to be weaker and broader than those for Cu2ZnSnSe4 , which is possibly due to more structural imperfections presented in Cu2ZnGeSe4 than Cu2ZnSnSe4 .

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

PubMed

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Electronic Structure and Optical Properties of Cu 2ZnGeSe 4. First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Sukgeun; Park, Ji-Sang; Donohue, Andrea

2015-11-19

Cu 2ZnGeSe 4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric functionϵ=ϵ1+iϵ2 spectrum of polycrystalline Cu 2ZnGeSe 4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peakmore » shapes and relative intensities between experimental spectra and the calculated ϵ data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. We found that the complex refractive index N=n+ik, normal-incidence reflectivity R, and absorption coefficients α are calculated from the modeled ϵ spectrum, which are also compared with those of Cu 2ZnSnSe 4 . The spectral features for Cu 2ZnGeSe 4 appear to be weaker and broader than those for Cu 2ZnSnSe 4 , which is possibly due to more structural imperfections presented in Cu 2ZnGeSe 4 than Cu 2ZnSnSe 4 .« less

Zn-Cu-In-Se Quantum Dot Solar Cells with a Certified Power Conversion Efficiency of 11.6%.

PubMed

Du, Jun; Du, Zhonglin; Hu, Jin-Song; Pan, Zhenxiao; Shen, Qing; Sun, Jiankun; Long, Donghui; Dong, Hui; Sun, Litao; Zhong, Xinhua; Wan, Li-Jun

2016-03-30

The enhancement of power conversion efficiency (PCE) and the development of toxic Cd-, Pb-free quantum dots (QDs) are critical for the prosperity of QD-based solar cells. It is known that the properties (such as light harvesting range, band gap alignment, density of trap state defects, etc.) of QD light harvesters play a crucial effect on the photovoltaic performance of QD based solar cells. Herein, high quality ∼4 nm Cd-, Pb-free Zn-Cu-In-Se alloyed QDs with an absorption onset extending to ∼1000 nm were developed as effective light harvesters to construct quantum dot sensitized solar cells (QDSCs). Due to the small particle size, the developed QD sensitizer can be efficiently immobilized on TiO2 film electrode in less than 0.5 h. An average PCE of 11.66% and a certified PCE of 11.61% have been demonstrated in the QDSCs based on these Zn-Cu-In-Se QDs. The remarkably improved photovoltaic performance for Zn-Cu-In-Se QDSCs vs Cu-In-Se QDSCs (11.66% vs 9.54% in PCE) is mainly derived from the higher conduction band edge, which favors the photogenerated electron extraction and results in higher photocurrent, and the alloyed structure of Zn-Cu-In-Se QD light harvester, which benefits the suppression of charge recombination at photoanode/electrolyte interfaces and thus improves the photovoltage.

Comparison of serum Concentration of Se, Pb, Mg, Cu, Zn, between MS patients and healthy controls

PubMed Central

Alizadeh, Anahita; Mehrpour, Omid; Nikkhah, Karim; Bayat, Golnaz; Espandani, Mahsa; Golzari, Alireza; Jarahi, Lida; Foroughipour, Mohsen

2016-01-01

Introduction Multiple Sclerosis (MS) is defined as one of the inflammatory autoimmune disorders and is common. Its exact etiology is unclear. There are some evidences on the role of environmental factors in susceptible genetics. The aim of this study is to evaluate the possible role of Selenium, Zinc, Copper, Lead and Magnesium metals in Multiple Sclerosis patients. Methods In the present analytical cross-sectional study, 56 individuals including 26 patients and 30 healthy controls were enrolled in the evaluation. The serum level of Se, Zn, Cu, Pb were quantified in graphite furnace conditions and flame conditions by utilizing an atomic absorption Perkin Elmer spectrophotometer 3030. The serum levels of Mg were measured by auto analyzer 1500 BT. The mean level of minerals (Zn, Pb, Cu, Mg, Se) in serum samples were compared in both cases and controls. The mean level of minerals (Zn, Pb, Cu, Mg, Se) in serum samples were compared in both cases and controls by using independent-samples t-test for normal distribution and Mann-Whitney U test as a non-parametric test. All statistical analyses were carried out using SPSS 11.0. Results As well as the Zn, Cu, and Se, there was no significant difference between MS patients and healthy individuals in Pb concentrations (p-value = 0.11, 0.14, 0.32, 0.20 respectively) but the level of Mg was significantly different (p= 0.001). Conclusion All serum concentrations of Zn, Pb, Se, Cu in both groups were in normal ranges and there was no difference in MS patients compared with the healthy group who were matched in genetics. Blood level of Mg was significantly lower in MS patients. But it should be noted that even with the low level of serum magnesium in MS patients, this value is still in the normal range. PMID:27757186

Mechanical Properties and Tensile Failure Analysis of Novel Bio-absorbable Mg-Zn-Cu and Mg-Zn-Se Alloys for Endovascular Applications

PubMed Central

Persaud-Sharma, Dharam; Budiansky, Noah; McGoron, Anthony J.

2013-01-01

In this paper, the mechanical properties and tensile failure mechanism of two novel bio-absorbable as-cast Mg-Zn-Se and Mg-Zn-Cu alloys for endovascular medical applications are characterized. Alloys were manufactured using an ARC melting process and tested as-cast with compositions of Mg-Zn-Se and Mg-Zn-Cu, being 98/1/1 wt.% respectively. Nanoindentation testing conducted at room temperature was used to characterize the elastic modulus (E) and surface hardness (H) for both the bare alloys and the air formed oxide layer. As compared to currently available shape memory alloys and degradable as-cast alloys, these experimental alloys possess superior as-cast mechanical properties that can increase their biocompatibility, degradation kinetics, and the potential for medical device creation. PMID:23543822

Preparation & characterization of high purity Cu2 ZnSn(SxSe1-x)4 nanoparticles

NASA Astrophysics Data System (ADS)

Negash, Bethlehem G.

Research in thin film solar cells applies novel techniques to synthesize cost effective and highly efficient absorber materials in order to generate electricity directly from solar energy. Of these materials, copper zinc tin sulfoselenide (Cu2ZnSn(SxSe1-x) 4) nanoparticles have shown great promise in solar cell applications due to optimal material properties as well as low cost & relative abundance of materials.1,2 Sulfoselenide nanoparticles have also a broader impact in other industries including electronics3, LED 4, and biomedical research5. Of the many routes of manufacturing these class of semiconductors, colloidal synthesis of Cu 2ZnSn(SxSe1-x)4 offers a scalable, low cost and high-throughput route for manufacturing high efficiency thin-film solar cells. Hydrazine processed Cu2ZnSn(SxSe1-x )4 devices have reached a record power conversion efficiency (PCE) of 12.6%, much higher than the 9.6% reported for physical vapor deposition (PVD) systems.6,7. Despite high efficiencies, wet synthesis of nanoparticles, however, is made more complicated in multi-element, quaternary and quinary systems such as copper zinc tin sulfoselenide (CZTSSe) and copper indium gallium diselenide (CIGSe). One major disadvantage in these systems is growth of the desired quaternary or quinary phase in competition with unwanted binary and ternary phases with low energy of formation.8,9 Moreover, various reaction parameters such as reaction time, temperature, and choice of ligand also affect, chemical as well as physical properties of resulting nanoparticles. Understanding of the formation mechanisms of the particles is necessary in order to address some of these challenges in wet synthesis of CZTSSe nanoparticles. In this study, we investigate synthesis conditions & reaction parameters which yield high purity Cu2ZnSn(SxSe1-x) 4 nanoparticles as well as attempt to understand the growth mechanism of these nanoparticles. This was achieved by manipulating anion precursor preparation routes as

Elemental Precursor Solution Processed (Cu1-xAgx)2ZnSn(S,Se)4 Photovoltaic Devices with over 10% Efficiency.

PubMed

Qi, Yafang; Tian, Qingwen; Meng, Yuena; Kou, Dongxing; Zhou, Zhengji; Zhou, Wenhui; Wu, Sixin

2017-06-28

The partial substitution of Cu + with Ag + into the host lattice of Cu 2 ZnSn(S,Se) 4 thin films can reduce the open-circuit voltage deficit (V oc,deficit ) of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. In this paper, elemental Cu, Ag, Zn, Sn, S, and Se powders were dissolved in solvent mixture of 1,2-ethanedithiol (edtH 2 ) and 1,2-ethylenediamine (en) and used for the formation of (Cu 1-x Ag x ) 2 ZnSn(S,Se) 4 (CAZTSSe) thin films with different Ag/(Ag + Cu) ratios. The key feature of this approach is that the impurity atoms can be absolutely excluded. Further results indicate that the variations of grain size, band gap, and depletion width of the CAZTSSe layer are generally determined by Ag substitution content. Benefiting from the V oc enhancement (∼50 mV), the power conversion efficiency is successfully increased from 7.39% (x = 0) to 10.36% (x = 3%), which is the highest efficiency of Ag substituted devices so far.

A simulation study to improve the efficiency of ZnO1-xSx/Cu2ZnSn (Sy, Se1-y)4 solar cells by composition-ratio control

NASA Astrophysics Data System (ADS)

Sharbati, S.; Norouzzadeh, E.; Mohammadi, S.

2018-04-01

This work investigates the impact of the conduction-band offset (CBO) and valence band offset (VBO) on the performance of Zn (O, S)/Cu2ZnSn (S, Se)4 solar cells by numerical simulations. The band gap alignment at the buffer-CZTS layer interface are controlled by the sulfur-to-oxygen and sulfur-to-selenium ratios. The simulation results show that the high sulfur content in the Zn (O, S) layer makes a big offset in the conduction band and high oxygen content in the in the Zn (O, S) layer eventuates in large valence band offset, that descends Cu2ZnSn (S, Se)4 solar cell performance. We established an initial device model based on an experimental device with world record efficiencies of 12.6%. This study shows that most suitable heterojunction for ZnO1-xSx/Cu2ZnSn (Sy, Se1-y)4 solar cells is when sulfur content ranging 19%-50% in the Zn (O, S) and 30%-50% in the CZTSSe. The efficiency of Cu2ZnSn (S, Se)4 solar cells will be achieved to 14.3%.

Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se 2 interface

DOE PAGES

Mezher, Michelle; Garris, Rebekah; Mansfield, Lorelle M.; ...

2016-11-11

In this study, the chemical structure of the Zn(O,S)/Cu(In,Ga)Se 2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se 2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH) 2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se 2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer,more » and the formation of S—In and/or S—Ga bonds at or close to the interface.« less

Relation of pH and other soil variables to concentrations of Pb, Cu, Zn, Cd, and Se in earthworms

USGS Publications Warehouse

Beyer, W.N.; Hensler, G.L.; Moore, J.

1987-01-01

Various soil treatments (clay, composted peat, superphosphate, sulfur, calcium carbonate, calcium chloride, zinc chloride, selenous acid) were added to experimental field plots to test the effect of different soil variables on the concentrations of 5 elements in earthworms (Pb, Cu, Zn, Cd, Se). Concentrations of the 5 elements were related to 9 soil variables (soil Pb, soil Cu, soil Zn, pH, organic matter, P, K, Mg, and Ca) with linear multiple regression. Lead concentrations in earthworms were positively correlated with soil Pb and soil organic matter, and negatively correlated with soil pH and soil Mg, with an R2 of 64%. Se concentrations were higher in earthworms from plots amended with Se, and Zn concentrations were higher in earthworms from plots amended with Zn. However, none of the other soil variables had important effects on the concentrations of Cu, Zn, Cd and Se in earthworms. Although some significant statistical relations were demonstrated, the values of r2 of all relations (> 20%) were so low that they had little predictive value.

Influence of Selenization Time on Microstructural, Optical, and Electrical Properties of Cu2ZnGeSe4 Films

NASA Astrophysics Data System (ADS)

Swapna Mary, G.; Hema Chandra, G.; Anantha Sunil, M.; Gupta, Mukul

2018-01-01

We have studied the effects of selenization time on the microstructural, optical, and electrical properties of stacked (Cu/Se/ZnSe/Se/Ge/Se) × 4 layers to demonstrate growth of Cu2ZnGeSe4 (CZGSe) thin films. Electron beam evaporation was used to deposit CZGSe films on glass substrates for selenization in high vacuum at 450°C for different times (15 min, 30 min, 45 min, and 60 min). The incomplete reaction of the precursor layers necessitates selenization at higher temperature for different durations to achieve desirable microstructural and optoelectronic properties. Energy-dispersive spectroscopic measurements revealed that the stacked layers selenized at 450°C for 30 min were nearly stoichiometric with atomic ratios of Cu/(Zn + Ge) = 0.88, Zn/Ge = 1.11, and Se/(Cu + Zn + Ge) = 1.03. X-ray diffraction analysis revealed that the stacks selenized at 450°C for 30 min crystallized in tetragonal stannite structure. Selenization-time-dependent Raman measurements of the selenized stacks are systematically presented to understand the growth of CZGSe. The elemental distribution through depth as a function of selenization time was investigated using secondary-ion mass spectroscopy. The ionic valency of the constituent elements in CZGSe films selenized at 450°C for 30 min was examined using high-resolution x-ray photoelectron spectroscopy. Significant changes were observed in the surface morphology of the stacked layers with increase in selenization time. The effects of defects on the electrical properties and of binary phases on the optical properties are discussed.

Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4

NASA Astrophysics Data System (ADS)

Zhu, Yingcai; Liu, Yong; Tan, Xing; Ren, Guangkun; Yu, Meijuan; Hu, Tiandou; Marcelli, Augusto; Xu, Wei

2018-04-01

Quaternary chalcogenide Cu2ZnSnSe4 (CZTSe) is a promising wide band-gap p-type thermoelectric material. The structure and thermoelectric properties of lead substituted Cu2ZnSn1-xPbxSe4 are investigated. Lead primarily exists in the framework of PbSe as demonstrated by x-ray diffraction and calculation of x-ray absorption near-edge structure spectroscopy. The second phase distributes at the boundaries of CZTSe with thickness in several hundreds of nanometer. With appropriate grain boundary engineering, the enhancement of power factor and a decrease of thermal conductivity can be achieved simultaneously. As a result, a maximum figure of merit zT of 0.45 is obtained for the sample with x=0.02 at 723K.

Self-Illuminating 64Cu-Doped CdSe/ZnS Nanocrystals for in Vivo Tumor Imaging

PubMed Central

2015-01-01

Construction of self-illuminating semiconducting nanocrystals, also called quantum dots (QDs), has attracted much attention recently due to their potential as highly sensitive optical probes for biological imaging applications. Here we prepared a self-illuminating QD system by doping positron-emitting radionuclide 64Cu into CdSe/ZnS core/shell QDs via a cation-exchange reaction. The 64Cu-doped CdSe/ZnS QDs exhibit efficient Cerenkov resonance energy transfer (CRET). The signal of 64Cu can accurately reflect the biodistribution of the QDs during circulation with no dissociation of 64Cu from the nanoparticles. We also explored this system for in vivo tumor imaging. This nanoprobe showed high tumor-targeting ability in a U87MG glioblastoma xenograft model (12.7% ID/g at 17 h time point) and feasibility for in vivo luminescence imaging of tumor in the absence of excitation light. The availability of these self-illuminating integrated QDs provides an accurate and convenient tool for in vivo tumor imaging and detection. PMID:24401138

Effects of the copper content on the structural and electrical properties of Cu2ZnSnSe4 bulks

NASA Astrophysics Data System (ADS)

Tsega, Moges; Dejene, F. B.; Koao, L. F.

2016-01-01

We have investigated the concept of defect in CuxZnSnSe4 (x=1.6-2.0) and Cuy(Zn0.9Sn1.1)Se4 (y= 1.6-2.0) bulks prepared by liquid-phase sintering at 600 °C for 2 h with soluble sintering aids of Sb2S3 and Te. All samples were found to exhibit p-type semiconductor for CuxZnSnSe4, while n-type of behavior obtained at y= 1.8-2.0 for Cuy(Zn0.9Sn1.1)Se4 pellets. The Cu vacancy acts as an acceptor point defect to form the p-type semiconductor, and Sn4+ acts as a donor to form the n-type behavior for the Sn-rich CZTSe. SEM images of pellets show dense surface morphology, and increase in grain size upon Cu inclusion. The largely increased Hall mobility and the slightly changed carrier concentration for Cuy(Zn0.9Sn1.1)Se4 with increasing the Cu content is related to the types of its defects. At y=2.0 with carrier concentration of 4.88×1017 cm-3 showed the highest mobility of around 58 cm2/V s. Based upon the proposed point defects, the CZTSe property can be consistently explained.

Pulse electro-deposition of copper on molybdenum for Cu(In,Ga)Se2 and Cu2ZnSnSe4 solar cell applications

NASA Astrophysics Data System (ADS)

Bi, Jinlian; Yao, Liyong; Ao, Jianping; Gao, Shoushuai; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2016-09-01

The issues of rough surface morphology and the incorporated additives of the electro-deposited Cu layers, which exists in electrodeposition-based processes, is one of the major obstacles to improve the efficiency of Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) solar cells. In this study, the pulse current electro-deposition method is employed to deposit smooth Cu film on Mo substrate in CuSO4 solution without any additives. Grain size of the deposited Cu film is decreased by high cathode polarization successfully. And the concentration polarization, which results from high pulse current density, is controlled successfully by adjusting the pulse frequency. Flat Cu film with smooth surface and compact structure is deposited as pulse current density @ 62.5 mA cm-2, pulse frequency @100,000 Hz, and duty cycle @ 25%. CIGSe and CZTSe absorber films with flat surface and uniform elemental distribution are prepared by selenizing the stacking metal layers electro-deposited by pulse current method. Finally, the CIGSe and CZTSe solar cells with conversion efficiency of 10.39% and 7.83% respectively are fabricated based on the smooth Cu films, which are better than the solar cells fabricated by the rough Cu film deposited by direct current electro-deposition method.

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

PubMed Central

Yao, Liyong; Ao, Jianping; Jeng, Ming-Jer; Bi, Jinlian; Gao, Shoushuai; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Chang, Liann-Be

2016-01-01

The preparation of Cu2ZnSnSe4 (CZTSe) thin films by the selenization of an electrodeposited copper–tin–zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSex vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSex vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films. A metal precursor with a very Sn-poor composition produces CZTSe films with large grains and a rough surface, while a metal precursor with a very Sn-rich composition procures CZTSe films with small grains and a compact surface. X-ray diffraction (XRD) and SEM revealed that the metal precursor with a Sn-rich composition can grow a thicker MoSe2 thin film at CZTSe/Mo interface than one with a Sn-poor composition, possibly because excess Sn in the precursor may catalyze the formation of MoSe2 thin film. A CZTSe solar cell with an efficiency of 7.94%was realized by using an electrodeposited metal precursor with a Sn/Cu ratio of 0.5 in selenization in a low-pressure Se+SnSex vapor. PMID:28773366

Structural and optical characterization of 1 µm of ternary alloy ZnCuSe thin films

NASA Astrophysics Data System (ADS)

Shaaban, E. R.; Hassan, H. Shokry; Aly, S. A.; Elshaikh, H. A.; Mahasen, M. M.

2016-08-01

Different compositions of Cu-doped ZnSe in ternary alloy Zn1- x Cu x Se thin films (with x = 0, 0.025, 0.05, 0.075 and 0.10) were evaporated (thickness 1 µm) onto glass substrate using electron beam evaporation method. The X-ray diffraction analysis for both powder and films indicated their polycrystalline nature with zinc blende (cubic) structure. The crystallite size was found to increase, while the lattice microstrain was decreased with increasing Cu dopant. The optical characterization of films was carried out using the transmittance spectra, where the refractive indices have been evaluated in transparent and medium transmittance regions using the envelope method, suggested by Swanepoel. The refractive index has been found to increase with increasing Cu content. The dispersion of refractive index has been analyzed in terms of the Wemple-DiDomenico single-oscillator model. The oscillator parameters, the single-oscillator energy E o, the dispersion energy E d and the static refractive index n 0, were estimated. The optical band gap was determined in strong absorption region of transmittance spectra and was found to increase from 2.702 to 2.821 eV with increasing the Cu content. This increase in the band gap was well explained by the Burstein-Moss effect.

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S) 2 and Cu 2ZnSn(Se,S) 4 devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se) 2 (CIGS) or Cu 2ZnSn(S,Se) 4 (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Lastly, our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S) 2 and Cu 2ZnSn(Se,S) 4 devices

DOE PAGES

Varley, J. B.; Lordi, V.

2014-08-08

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se) 2 (CIGS) or Cu 2ZnSn(S,Se) 4 (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Lastly, our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

Ultrasonic slurry sampling electrothermal vaporization inductively coupled plasma mass spectrometry for the determination of Cr, Fe, Cu, Zn and Se in cereals

NASA Astrophysics Data System (ADS)

Huang, Shih-Yi; Jiang, Shiuh-Jen; Sahayam, A. C.

2014-11-01

Ultrasonic slurry sampling electrothermal vaporization inductively coupled plasma mass spectrometry (USS-ETV-ICP-MS) has been applied to determine Cr, Fe, Cu, Zn and Se in several cereal samples. Thioacetamide was used as the modifier to enhance the ion signals. The background ions at the masses of interest were reduced in intensity significantly by using 1.0 mL min- 1 methane (CH4) as reaction cell gas in the dynamic reaction cell (DRC). Since the sensitivities of Cr, Fe, Cu, Zn and Se in different matrices were quite different, standard addition and isotope dilution methods were used for the determination of Cr, Fe, Cu, Zn and Se in these cereal samples. The method detection limits estimated from standard addition curves were about 1, 10, 4, 12 and 2 ng g- 1 for Cr, Fe, Cu, Zn and Se, respectively, in original cereal samples. This procedure has been applied to the determination of Cr, Fe, Cu, Zn and Se whose concentrations are in μg g- 1 (except Cr and Se) in standard reference materials (SRM) of National institute of standards and technology (NIST), NIST SRM 1568a Rice Flour and NIST SRM 1567a Wheat Flour and two cereal samples purchased from a local market. The analysis results of reference materials agreed with certified values at 95% confidence level according to Student's T-test. The results for the real world cereal samples were also found to be in good agreement with the pneumatic nebulization DRC ICP-MS results of the sample solutions.

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

PubMed Central

2014-01-01

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu2ZnSnSe4 solar cells.

PubMed

Steichen, Marc; Malaquias, João C; Arasimowicz, Monika; Djemour, Rabie; Brooks, Neil R; Van Meervelt, Luc; Fransaer, Jan; Binnemans, Koen; Dale, Phillip J

2017-01-16

Cu 2 ZnSnSe 4 -based solar cells with 5.5% power conversion efficiency were fabricated from Cu/Sn/Zn stacks electrodeposited from liquid metal salts. These electrolytes allow metal deposition rates one order of magnitude higher than those of other deposition methods.

Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

2010-12-01

We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.

Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications

NASA Astrophysics Data System (ADS)

Mesa, F.; Leguizamon, A.; Dussan, A.; Gordillo, G.

2016-10-01

In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

Thermoelectric Properties of In-Doped Cu2ZnGeSe4

NASA Astrophysics Data System (ADS)

Chetty, R.; Bali, A.; Femi, O. E.; Chattopadhyay, K.; Mallik, R. C.

2016-03-01

Recently, much research has been focused on finding new thermoelectric materials. Cu-based quaternary chalcogenides that belong to A2BCD4 (A = Cu; B = Zn, Cd; C = Sn, Ge; D = S, Se, Te) are wide band gap materials and one of the potential thermoelectric materials due to their complex crystal structures. In this study, In-doped quaternary compounds Cu2ZnGe1- x In x Se4 ( x = 0, 0.025, 0.05, 0.075, 0.1) were prepared by a solid state synthesis method. Powder x-ray diffraction patterns of all the samples showed a tetragonal crystal structure (space group I- 42m) of the main phase with a trace amount of impurity phases, which was further confirmed by Rietveld analysis. The elemental composition of all the samples showed a slight deviation from the nominal composition with the presence of secondary phases. All the transport properties were measured in the temperature range 373-673 K. The electrical resistivity of all the samples initially decreased up to ˜470 K and then increased with increase in temperature upto 673 K, indicating the transition from semiconducting to metallic behavior. Positive Seebeck coefficients for all the samples revealed that holes are the majority carriers in the entire temperature range. The substitution of In3+ on Ge4+ introduces holes and results in the decrease of resistivity as well as the Seebeck coefficient, thereby leading to the optimization of the power factor. The lattice thermal conductivity of all the samples decreased with increasing temperature, indicating the presence of phonon-phonon scattering. As a result, the thermoelectric figure of merit ( zT) of the doped sample showed an increase as compared to the undoped compound.

Point defects in Cu 2ZnSnSe 4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition

DOE PAGES

Schelhas, L. T.; Stone, K. H.; Harvey, S. P.; ...

2017-07-25

We report that the interest in Cu 2ZnSn(S,Se) 4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se 2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a V oc deficit, where the V oc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. Tomore » directly determine the level of Cu/Zn ordering, we have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. Finally, to understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.« less

Hole mobility enhancement of Cu-deficient Cu{sub 1.75}Zn(Sn{sub 1−x}Al{sub x})Se{sub 4} bulks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuo, Dong-Hau, E-mail: dhkuo@mail.ntust.edu.tw; Tsega, Moges

2013-10-15

Cu-deficient Cu{sub 1.75}ZnSn{sub 1−x}Al{sub x}Se{sub 4} (x=0–0.6) bulks were prepared by a liquid-phase reactive sintering method at 600 {sup °}C with soluble sintering aids of Sb{sub 2}S{sub 3} and Te. Defect chemistry was studied by measuring electrical properties of Al-doped CZTSe as a function of dopant concentration. Al-CZTSe pellets at x=0.4 with electrical conductivity of 57.2 S cm{sup −1} showed the highest hole mobility of 32.5 cm{sup 2} V{sup −1} s{sup −1}. The high mobility is mainly contributed from the low atomic scattering factor of Al. The high carrier concentration and slightly changed lattice parameter of Al-CZTSe are related tomore » the types of its defects. - Graphical abstract: The controls in electrical properties and the changes in lattice parameters of Cu-deficient Cu{sub 2}ZnSnSe{sub 4} by doping Al{sup 3+} on the Sn{sup 4+} site. Display Omitted - Highlights: • Cu-deficient Cu{sub 1.75}Zn(Sn{sub 1−x}Al{sub x})Se{sub 4} was prepared by liquid-phase sintering at 600 °C. • Sintering aids of Sb{sub 2}S{sub 3} and Te were used for reactive sintering. • Al-CZTSe at x=0.4 showed the extremely high mobility of 32.5 cm{sup 2} V{sup −1} s{sup −1}. • Al-CZTSe reached large grains of 2−3 μm, while it was <1.0 μm for the undoped. • Electrical properties of Al-CZTSe pellets changed with the Al content.« less

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

2016-01-14

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to stronglymore » favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.« less

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter.

PubMed

Kim, Jeehwan; Hiroi, Homare; Todorov, Teodor K; Gunawan, Oki; Kuwahara, Masaru; Gokmen, Tayfun; Nair, Dhruv; Hopstaken, Marinus; Shin, Byungha; Lee, Yun Seog; Wang, Wei; Sugimoto, Hiroki; Mitzi, David B

2014-11-26

High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Zn–Se–Cd–S Interlayer Formation at the CdS/Cu 2 ZnSnSe 4 Thin-Film Solar Cell Interface

DOE PAGES

Bär, Marcus; Repins, Ingrid; Weinhardt, Lothar; ...

2017-06-14

The chemical structure of the CdS/Cu 2ZnSnSe 4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a 'redistribution' of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. Here, we find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We also suggestmore » the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.« less

Facile hot-injection synthesis of stoichiometric Cu2ZnSnSe4 nanocrystals using bis(triethylsilyl) selenide.

PubMed

Jin, Chunyu; Ramasamy, Parthiban; Kim, Jinkwon

2014-07-07

Cu2ZnSnSe4 is a prospective material as an absorber in thin film solar cells due to its many advantages including direct band gap, high absorption coefficient, low toxicity, and relative abundance (indium-free) of its elements. In this report, CZTSe nanoparticles have been synthesized by the hot-injection method using bis-(triethylsilyl)selenide [(Et3Si)2Se] as the selenium source for the first time. Energy dispersive X-ray spectroscopy (EDS) confirmed the stoichiometry of CZTSe nanoparticles. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that the nanocrystals were single phase polycrystalline with their size within the range of 25-30 nm. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements ruled out the existence of secondary phases such as Cu2SnSe3 and ZnSe. The effect of reaction time and precursor injection order on the formation of stoichiometric CZTSe nanoparticles has been studied by Raman spectroscopy. UV-vis-NIR data indicate that the CZTSe nanocrystals have an optical band gap of 1.59 eV, which is optimal for photovoltaic applications.

Impact of biogenic nanoscale metals Fe, Cu, Zn and Se on reproductive LV chickens

NASA Astrophysics Data System (ADS)

Khiem Nguyen, Quy; Dieu Nguyen, Duy; Kien Nguyen, Van; Thinh Nguyen, Khac; Chau Nguyen, Hoai; Tin Tran, Xuan; Nguyen, Huu Cuong; Tien Phung, Duc

2015-09-01

Using biogenic nanoscale metals (Fe, Cu, ZnO, Se) to supplement into diet premix of reproductive LV (a Vietnamese Luong Phuong chicken breed) chickens resulted in certain improvement of poultry farming. The experimental data obtained showed that the farming indices depend mainly on the quantity of nanocrystalline metals which replaced the inorganic mineral component in the feed premix. All four experimental groups with different quantities of the replacement nano component grew and developed normally with livability reaching 91 to 94%, hen’s bodyweight at 38 weeks of age and egg weight ranged from 2.53-2.60 kg/hen and 50.86-51.55 g/egg, respectively. All these farming indices together with laying rate, egg productivity and chick hatchability peaked at group 5 with 25% of nanoscale metals compared to the standard inorganic mineral supplement, while feed consumption was lowest. The results also confirmed that nanocrystalline metals Fe, Cu, ZnO and Se supplemented to chicken feed were able to decrease inorganic minerals in the diet premixes at least four times, allowing animals to more effectively absorb feed minerals, consequently decreasing environmental pollution risks.

19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya. R. N.

2008-01-01

CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.

Preparation of Cu{sub 2}ZnSnSe{sub 4} solar cells by low-temperature co-evaporation and following selenization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Chao, E-mail: chao.gao@kit.edu; Hetterich, Michael; Schnabel, Thomas

2016-01-04

Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films are prepared by a two-step method which involves co-evaporation of Cu, Zn, Sn, and Se on molybdenum-coated soda-lime glass at low substrate temperature and a following selenization. Solar cells with efficiencies of up to 6.5% can be achieved. The influence of the selenium deposition rates during co-evaporation and the nitrogen pressure during selenization on the properties of the CZTSe films are investigated. It is found that these two parameters can significantly affect the morphology and crystallinity of the CZTSe films. The possible reasons for the experimental results are discussed.

Minority carrier diffusion length extraction in Cu2ZnSn(Se,S)4 solar cells

NASA Astrophysics Data System (ADS)

Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B.

2013-09-01

We report measurement of minority carrier diffusion length (Ld) for high performance Cu2ZnSn(S,Se)4 (CZTSSe) solar cells in comparison with analogous Cu(In,Ga)(S,Se)2 (CIGSSe) devices. Our Ld extraction method involves performing systematic measurements of the internal quantum efficiency combined with separate capacitance-voltage measurement. This method also enables the measurement of the absorption coefficient of the absorber material as a function of wavelength in a finished device. The extracted values of Ld for CZTSSe samples are at least factor of 2 smaller than those for CIGSSe samples. Combined with minority carrier lifetime (τ) data measured by time-resolved photoluminescence, we deduce the minority carrier mobility (μe), which is also relatively low for the CZTSSe samples.

INFLUENCE OF THE CHEMICAL POTENTIAL ON THE CARRIER EFFECTIVE MASS IN THE THERMOELECTRIC SOLID SOLUTION Cu2Zn1-xFexGeSe4

NASA Astrophysics Data System (ADS)

Zeier, Wolfgang G.; Day, Tristan; Schechtel, Eugen; Snyder, G. Jeffrey; Tremel, Wolfgang

2013-08-01

In this paper, we describe the synthesis and characterization of the solid solution Cu2Zn1-xFexGeSe4. Electronic transport data have been analyzed using a single parabolic band model and have been compared to Cu2+xZn1-xGeSe4. The effective mass of these undoped, intrinsically hole conducting materials increases linearly with increasing carrier concentration, showing a non-parabolic transport behavior within the valence band.

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Liu, Wei; Fan, Yu; Li, Xiaodong; Lin, Shuping; Liu, Yang; Shi, Sihan; Wang, He; Zhou, Zhiqiang; Zhang, Yi; Sun, Yun

2018-03-01

Cu(In,Ga)Se2 thin film solar cells are of great interest for research and industrial applications with their high conversion efficiencies, long-term stability and significant lifetimes. Such a solar cell of a p-n junction consists of p-type Cu(In,Ga)Se2 films as a light absorber and n-type CdS as a buffer layer, which often emerges with intrinsic ZnO. Aimed at eco-friendly fabrication protocols, a large number of strategies have been investigated to fabricate a Cd-free n-type buffer layer such as Zn(O,S) in Cu(In,Ga)Se2 solar cells. Also, if the Zn(O,S) films are prepared by coevaporation or sputtering, it will offer high compatibility with the preferred mass production. Here, we propose and optimize a dry method for Zn(O,S) deposition in a radio frequency sputtering. In particular, the strategy for the twin-layer configurations of Zn(O,S) films not only greatly improve their electrical conductance and suppress charge carrier recombination, but also avoid degradation of the Zn(O,S)/Cu(In,Ga)Se2 interfaces. Indeed, the high quality of such twin Zn(O,S) layers have been reflected in the similar conversion efficiencies of the complete solar cells as well as the large short-circuit current density, which exceeds the CdS reference device. In addition, Zn(O,S) twin layers have reduced the production time and materials by replacing the CdS/i-ZnO layers, which removes two fabrication steps in the multilayered thin film solar cells. Furthermore, the device physics for such improvements have been fully unveiled with both experimental current-voltage and capacitance-voltage spectroscopies and device simulations via wxAMPS program. Finally, the proposed twin-layer Zn(O,S)/Cu(In,Ga)Se2 interfaces account for the broadening of the depletion region of photogenerated charge carriers, which greatly suppress the carrier recombination at the space charge region, and eventually lead to the more efficient collection of charge carriers at both electrodes.

Intrinsic point defects in off-stoichiometric Cu2ZnSnSe4: A neutron diffraction study

NASA Astrophysics Data System (ADS)

Gurieva, Galina; Valle Rios, Laura Elisa; Franz, Alexandra; Whitfield, Pamela; Schorr, Susan

2018-04-01

This work is an experimental study of intrinsic point defects in off-stoichiometric kesterite type CZTSe by means of neutron powder diffraction. We revealed the existence of copper vacancies (VCu), various cation anti site defects (CuZn, ZnCu, ZnSn, SnZn, and CuZn), as well as interstitials (Cui, Zni) in a wide range of off-stoichiometric polycrystalline powder samples synthesized by the solid state reaction. The results show that the point defects present in off-stoichiometric CZTSe agree with the off-stoichiometry type model, assuming certain cation substitutions accounting for charge balance. In addition to the known off-stoichiometry types A-H, new types (I-L) have been introduced. For the very first time, a correlation between the chemical composition of the CZTSe kesterite type phase and the occurring intrinsic point defects is presented. In addition to the off-stoichiometry type specific defects, the Cu/Zn disorder is always present in the CZTSe phase. In Cu-poor/Zn-rich CZTSe, a composition considered as the one that delivers the best photovoltaic performance, mainly copper vacancies, ZnCu and ZnSn anti sites are present. Also, this compositional region shows the lowest degree of Cu/Zn disorder.

Enhanced Thermoelectric Properties of Cu 2ZnSnSe 4 with Ga-doping

DOE PAGES

Wei, Kaya; Beauchemin, Laura; Wang, Hsin; ...

2015-08-10

Gallium doped Cu 2ZnSnSe 4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S 2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are partmore » of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

Soil solution dynamics of Cu and Zn in a Cu- and Zn-polluted soil as influenced by gamma-irradiation and Cu-Zn interaction.

PubMed

Luo, Y M; Yan, W D; Christie, P

2001-01-01

A pot experiment was conducted to study soil solution dynamics of Cu and Zn in a Cu/Zn-polluted soil as influenced by gamma-irradiation and Cu-Zn interaction. A slightly acid sandy loam was amended with Cu and Zn (as nitrates) either singly or in combination (100 mg Cu and 150 mg Zn kg(-1) soil) and was then gamma-irradiated (10 kGy). Unamended and unirradiated controls were included, and spring barley (Hordeum vulgare L. cv. Forrester) was grown for 50 days. Soil solution samples obtained using soil moisture samplers immediately before transplantation and every ten days thereafter were used directly for determination of Cu, Zn, pH and absorbance at 360 nm (A360). Cu and Zn concentrations in the solution of metal-polluted soil changed with time and were affected by gamma-irradiation and metal interaction. gamma-Irradiation raised soil solution Cu substantially but generally decreased soil solution Zn. These trends were consistent with increased dissolved organic matter (A360) and solution pH after gamma-irradiation. Combined addition of Cu and Zn usually gave higher soil solution concentrations of Cu or Zn compared with single addition of Cu or Zn in gamma-irradiated and non-irradiated soils, indicating an interaction between Cu and Zn. Cu would have been organically complexed and consequently maintained a relatively high concentration in the soil solution under higher pH conditions. Zn tends to occur mainly as free ion forms in the soil solution and is therefore sensitive to changes in pH. The extent to which gamma-irradiation and metal interaction affected solubility and bioavailability of Cu and Zn was a function of time during plant growth. Studies on soil solution metal dynamics provide very useful information for understanding metal mobility and bioavailability.

Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun-Sheng; Moutinho, Helio

2016-11-21

We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm frommore » the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.« less

Electrodeposition of Zn and Cu-Zn alloy from ZnO/CuO precursors in deep eutectic solvent

NASA Astrophysics Data System (ADS)

Xie, Xueliang; Zou, Xingli; Lu, Xionggang; Lu, Changyuan; Cheng, Hongwei; Xu, Qian; Zhou, Zhongfu

2016-11-01

The electrodeposition of Zn and Cu-Zn alloy has been investigated in choline chloride (ChCl)/urea (1:2 molar ratio) based deep eutectic solvent (DES). Cyclic voltammetry study demonstrates that the reduction of Zn(II) to Zn is a diffusion-controlled quasi-reversible, one-step, two electrons transfer process. Chronoamperometric investigation indicates that the electrodeposition of Zn on a Cu electrode typically involves three-dimensional instantaneous nucleation with diffusion-controlled growth process. Micro/nanostructured Zn films can be obtained by controlling the electrodeposition potential and temperature. The electrodeposited Zn crystals preferentially orient parallel to the (101) plane. The Zn films electrodeposited under more positive potentials and low temperatures exhibit improved corrosion resistance in 3 wt% NaCl solution. In addition, Cu-Zn alloy films have also been electrodeposited directly from CuO-ZnO precursors in ChCl/urea-based DES. The XRD analysis indicates that the phase composition of the electrodeposited Cu-Zn alloy depends on the electrodeposition potential.

Chemical bath deposited ZnS buffer layer for Cu(In,Ga)Se2 thin film solar cell

NASA Astrophysics Data System (ADS)

Hong, Jiyeon; Lim, Donghwan; Eo, Young-Joo; Choi, Changhwan

2018-02-01

The dependence of Zn precursors using zinc sulfate (ZnSO4), zinc acetate (Zn(CH3COO)2), and zinc chloride (ZnCl2) on the characteristics of the chemical bath deposited ZnS thin film used as a buffer layer of Cu(In,Ga)Se2 (CIGS) thin film solar cell was studied. It is found that the ZnS film deposition rate increases with higher stability constant during decomplexation reaction of zinc ligands, which affects the crack formation and the amount of sulfur and oxygen contents within the film. The band gap energies of all deposited films are in the range of 3.40-3.49 eV, which is lower than that of the bulk ZnS film due to oxygen contents within the films. Among the CIGS solar cells having ZnS buffer layers prepared by different Zn precursors, the best cell efficiency with 9.4% was attained using Zn(CH3COO)2 precursor due to increased Voc mainly. This result suggests that [Zn(NH3)4]2+ complex formation should be well controlled to attain the high quality ZnS thin films.

High temperature XRD of Cu2.1Zn0.9SnSe4

NASA Astrophysics Data System (ADS)

Chetty, Raju; Mallik, Ramesh Chandra

2014-04-01

Quaternary compound with chemical composition Cu2.1Zn0.9SnSe4 is prepared by solid state synthesis. High temperature XRD (X-Ray Diffraction) of this compound is used in studying the effect of temperature on lattice parameters and thermal expansion coefficients. Thermal expansion coefficient is one of the important quantities in evaluating the Grüneisen parameter which further useful in determining the lattice thermal conductivity of the material. The high temperature XRD of the material revealed that the lattice parameters as well as thermal expansion coefficients of the material increased with increase in temperature which confirms the presence of anharmonicty.

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors.

PubMed

Mainz, Roland; Walker, Bryce C; Schmidt, Sebastian S; Zander, Ole; Weber, Alfons; Rodriguez-Alvarez, Humberto; Just, Justus; Klaus, Manuela; Agrawal, Rakesh; Unold, Thomas

2013-11-07

The selenization of Cu-Zn-Sn-S nanocrystals is a promising route for the fabrication of low-cost thin film solar cells. However, the reaction pathway of this process is not completely understood. Here, the evolution of phase formation, grain size, and elemental distributions is investigated during the selenization of Cu-Zn-Sn-S nanoparticle precursor thin films by synchrotron-based in situ energy-dispersive X-ray diffraction and fluorescence analysis as well as by ex situ electron microscopy. The precursor films are heated in a closed volume inside a vacuum chamber in the presence of selenium vapor while diffraction and fluorescence signals are recorded. The presented results reveal that during the selenization the cations diffuse to the surface to form large grains on top of the nanoparticle layer and the selenization of the film takes place through two simultaneous reactions: (1) a direct and fast formation of large grained selenides, starting with copper selenide which is subsequently transformed into Cu2ZnSnSe4; and (2) a slower selenization of the remaining nanoparticles. As a consequence of the initial formation of copper selenides at the surface, the subsequent formation of CZTSe starts under Cu-rich conditions despite an overall Cu-poor composition of the film. The implications of this process path for the film quality are discussed. Additionally, the proposed growth model provides an explanation for the previously observed accumulation of carbon from the nanoparticle precursor beneath the large grained layer.

Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

NASA Astrophysics Data System (ADS)

Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

2012-05-01

The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

Formation of highly luminescent Zn1-xCdxSe nanocrystals using CdSe and ZnSe seeds

NASA Astrophysics Data System (ADS)

Zhang, Ruili; Yang, Ping

2013-05-01

High-quality colloidal Zn1-xCdxSe nanocrystals (NCs) with tunable photoluminescence (PL) from blue to orange were synthesized using oleic acid as a capping agent. The Zn1-xCdxSe NCs were prepared through two approaches: using CdSe or ZnSe seeds. In the case of CdSe NCs as seeds, Zn1-xCdxSe NCs were fabricated by the reaction of Zn, Cd, and Se precursors in the coordinating solvent system at high temperature. The Zn1-xCdxSe NCs revealed orange emitting. A significant blue-shift of absorption and PL spectra were observed with time, indicating the formation of ternary NCs. In contrast, Zn1-xCdxSe NCs revealed blue to green PL for ZnSe NCs as seeds. This is ascribed to an embryonic nuclei-induced alloying process. With increasing time, the Zn1-xCdxSe NCs exhibited a red-shift both in their absorption and PL spectra. This is attributed to the engineering in band gap energy via the control of NC composition. The PL properties of as-prepared alloyed NCs are comparable or even better than those for the parent binary systems. The PL peak wavelength of the Zn1-xCdxSe NCs depended strongly on reaction time and the molar ratio of Cd/Zn. The Zn1-xCdxSe NCs revealed a spherical morphology and exhibited a wurtzite structure according to transmission electron microscopy observation and an X-ray diffraction analysis.

Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface

NASA Astrophysics Data System (ADS)

Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B.

2011-06-01

Energy band alignments between CdS and Cu2ZnSn(SxSe1-x)4 (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

Zn1-xCdxSe/ZnSe multiple quantum well photomodulators

NASA Astrophysics Data System (ADS)

Tang, Jiuyao; Kawakami, Yoichi; Fujita, Shizuo; Fujita, Shigeo

1996-10-01

ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.

Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties

NASA Astrophysics Data System (ADS)

Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

2016-06-01

Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications

Modification of defects and potential fluctuations in slow-cooled and quenched Cu2ZnSnSe4 single crystals

NASA Astrophysics Data System (ADS)

Bishop, Douglas M.; McCandless, Brian; Gershon, Talia; Lloyd, Michael A.; Haight, Richard; Birkmire, Robert

2017-02-01

Recent literature reports have shown the ability to manipulate Cu-Zn cation ordering for Cu2ZnSnSe4 (CZTSe) via low temperature treatments. Theoretical arguments suggest that one of the major roadblocks to higher VOC—significant band tailing—could be improved with increased cation order; however, few direct measurements have been reported and significant device improvements have not yet been realized. This report investigates electrical properties, defects, and devices from quenched and slow-cooled single crystals of CZTSe. The extent of disorder was characterized by Raman spectroscopy as well as x-ray diffraction, where the change in Cu-Zn order can be detected by a changing c/a ratio. Quenched samples show higher acceptor concentrations, lower hole mobilities, and a lower-energy photoluminescence (PL) peak than crystals cooled at slower rates, consistent with a reduction in the bandgap. In addition, samples quenched at the highest temperatures showed lower PL yield consistent with higher quantities of deep defects. Devices fabricated using slow-cooled CZTSe single crystals showed improved efficiencies, most notably with increased VOC; however, low temperature intensity-dependent photoluminescence measurements continue to indicate the existence of potential fluctuations. We discuss the possibility that potential fluctuations in slow-cooled samples may be related to the inability to achieve a long range order of the Cu-Zn sub-lattice resulting in local regions of high and low levels of cation order, and consequent local variations in the bandgap. The presence of significant potential fluctuations, even after the slow-cooling step, suggests the difficulty in eliminating band-tailing in this system, and thus, additional approaches may be needed for significant reduction of the VOC deficit.

Locating the electrical junctions in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 solar cells by scanning capacitance spectroscopy

DOE PAGES

Xiao, Chuanxiao; Jiang, Chun -Sheng; Moutinho, Helio; ...

2016-08-09

Here, we determined the electrical junction (EJ) locations in Cu(In,Ga)Se 2 (CIGS) and Cu 2ZnSnSe 4 (CZTS) solar cells with ~20-nm accuracy by developing scanning capacitance spectroscopy (SCS) applicable to the thin-film devices. Cross-sectional sample preparation for the SCS measurement was developed by high-energy ion milling at room temperature for polishing the cross section to make it flat, followed by low-energy ion milling at liquid nitrogen temperature for removing the damaged layer and subsequent annealing for growing a native oxide layer. The SCS shows distinct p-type, transitional, and n-type spectra across the devices, and the spectral features change rapidly withmore » location in the depletion region, which results in determining the EJ with ~20-nm resolution. We found an n-type CIGS in the region next to the CIGS/CdS interface; thus, the cell is a homojunction. The EJ is ~40 nm from the interface on the CIGS side. In contrast, such an n-type CZTS was not found in the CZTS/CdS cells. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. Our results of unambiguously determination of the junction locations contribute significantly to understanding the large open-circuit voltage difference between CIGS and CZTS.« less

Locating the electrical junctions in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 solar cells by scanning capacitance spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun -Sheng; Moutinho, Helio

Here, we determined the electrical junction (EJ) locations in Cu(In,Ga)Se 2 (CIGS) and Cu 2ZnSnSe 4 (CZTS) solar cells with ~20-nm accuracy by developing scanning capacitance spectroscopy (SCS) applicable to the thin-film devices. Cross-sectional sample preparation for the SCS measurement was developed by high-energy ion milling at room temperature for polishing the cross section to make it flat, followed by low-energy ion milling at liquid nitrogen temperature for removing the damaged layer and subsequent annealing for growing a native oxide layer. The SCS shows distinct p-type, transitional, and n-type spectra across the devices, and the spectral features change rapidly withmore » location in the depletion region, which results in determining the EJ with ~20-nm resolution. We found an n-type CIGS in the region next to the CIGS/CdS interface; thus, the cell is a homojunction. The EJ is ~40 nm from the interface on the CIGS side. In contrast, such an n-type CZTS was not found in the CZTS/CdS cells. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. Our results of unambiguously determination of the junction locations contribute significantly to understanding the large open-circuit voltage difference between CIGS and CZTS.« less

Cation/Anion Substitution in Cu2ZnSnS4 for Improved Photovoltaic Performance

PubMed Central

Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Jangid, Manoj K.; Bahadur, D.; Medhekar, N. V.; Aslam, M.

2016-01-01

Cations and anions are replaced with Fe, Mn, and Se in CZTS in order to control the formations of the secondary phase, the band gap, and the micro structure of Cu2ZnSnS4. We demonstrate a simplified synthesis strategy for a range of quaternary chalcogenide nanoparticles such as Cu2ZnSnS4 (CZTS), Cu2FeSnS4 (CFTS), Cu2MnSnS4 (CMTS), Cu2ZnSnSe4 (CZTSe), and Cu2ZnSn(S0.5Se0.5)4 (CZTSSe) by thermolysis of metal chloride precursors using long chain amine molecules. It is observed that the crystal structure, band gap and micro structure of the CZTS thin films are affected by the substitution of anion/cations. Moreover, secondary phases are not observed and grain sizes are enhanced significantly with selenium doping (grain size ~1 μm). The earth-abundant Cu2MSnS4/Se4 (M = Zn, Mn and Fe) nanoparticles have band gaps in the range of 1.04–1.51 eV with high optical-absorption coefficients (~104 cm−1) in the visible region. The power conversion efficiency of a CZTS solar cell is enhanced significantly, from 0.4% to 7.4% with selenium doping, within an active area of 1.1 ± 0.1 cm2. The observed changes in the device performance parameters might be ascribed to the variation of optical band gap and microstructure of the thin films. The performance of the device is at par with sputtered fabricated films, at similar scales. PMID:27748406

Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

NASA Astrophysics Data System (ADS)

Xin, Peipei

Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction

Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties.

PubMed

Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

2016-06-02

Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.

Low Temperature Photoluminescence of PVT Grown ZnSe and ZnSeTe

NASA Technical Reports Server (NTRS)

Wang, Ling Jun; Su, Ching-Hua; Lehoczky, S. L.

1999-01-01

ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.

Diode-pumped Cr-doped ZnMnSe and ZnMgSe lasers

NASA Astrophysics Data System (ADS)

Říha, A.; Němec, M.; Jelínková, H.; Čech, M.; Vyhlídal, D.; Doroshenko, M. E.; Komar, V. K.; Gerasimenko, A. S.

2017-12-01

Chromium ions Cr2+ are known to have good fluorescence properties in the mid-infrared spectral region around the wavelength of 2.5 μm. The aim of this study was the investigation of new laser crystal materials - Zn0.95Mn0.05Se, Zn0.70Mn 0.30Se, and Zn0.75Mg0.25Se doped by Cr2+ ions and comparison of their spectral and laser characteristics. The spectroscopic parameters as absorption and fluorescence spectra as well as lifetimes were measured. As optical pumping the laser diode generating radiation at the wavelength of 1.69 μm (pulse repetition rate 10 Hz, pulse width 2 ms) was used. The longitudinal-pumped resonator was hemispherical with an output coupler radius of curvature 150 mm. The laser emission spectra were investigated and the highest intensity of emitted radiation was achieved at wavelengths 2451 nm, 2469 nm, and 2470 nm from the Cr:Zn0.95Mn0.05Se, Cr:Zn0.70Mn0.30Se, and Cr:Zn0.75Mg0.25Se laser systems, respectively. The input-output characteristics of laser systems were measured; the maximum output peak power 177 mW was obtained for Cr:Zn0.95Mn0.05Se laser system with slope efficiency of 6.3 % with respect to absorbed peak power. The output peak power as well as output beam spatial structure were stable during measurements. For the selection of the lasing wavelength, the single 1.5 mm thick quartz plate was placed at the Brewster angle inside the optical resonator between the output coupler and laser active medium. This element provided the tuning in the wavelength range 2290-2578 nm, 2353-2543 nm, and 2420-2551 nm for Cr:Zn0.95Mn0.05Se, Cr:Zn0.70Mn0.30Se, and Cr:Zn0.75Mg0.25Se, respectively. The obtained spectral FWHM linewidth of the individual output radiation was 10 nm. A comparison with previously measured Cr:ZnSe laser system was added in the end

Stable Cu and Zn isotope ratios as tracers of sources and transport of Cu and Zn in contaminated soil

NASA Astrophysics Data System (ADS)

Bigalke, Moritz; Weyer, Stefan; Kobza, Jozef; Wilcke, Wolfgang

2010-12-01

Copper and Zn metals are produced in large quantities for different applications. During Cu production, large amounts of Cu and Zn can be released to the environment. Therefore, the surroundings of Cu smelters are frequently metal-polluted. We determined Cu and Zn concentrations and Cu and Zn stable isotope ratios (δ 65Cu, δ 66Zn) in three soils at distances of 1.1, 3.8, and 5.3 km from a Slovak Cu smelter and in smelter wastes (slag, sludge, ash) to trace sources and transport of Cu and Zn in soils. Stable isotope ratios were measured by multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) in total digests. Soils were heavily contaminated with concentrations up to 8087 μg g -1 Cu and 2084 μg g -1 Zn in the organic horizons. The δ 65Cu values varied little (-0.12‰ to 0.36‰) in soils and most wastes and therefore no source identification was possible. In soils, Cu became isotopically lighter with increasing depth down to 0.4 m, likely because of equilibrium reactions between dissolved and adsorbed Cu species during transport of smelter-derived Cu through the soil. The δ 66Zn IRMM values were isotopically lighter in ash (-0.41‰) and organic horizons (-0.85‰ to -0.47‰) than in bedrock (-0.28‰) and slag (0.18‰) likely mainly because of kinetic fractionation during evaporation and thus allowed for separation of smelter-Zn from native Zn in soil. In particular in the organic horizons large variations in δ 66Zn values occur, probably caused by biogeochemical fractionation in the soil-plant system. In the mineral horizons, Zn isotopes showed only minor shifts to heavier δ 66Zn values with depth mainly because of the mixing of smelter-derived Zn and native Zn in the soils. In contrast to Cu, Zn isotope fractionation between dissolved and adsorbed species was probably only a minor driver in producing the observed variations in δ 66Zn values. Our results demonstrate that metal stable isotope ratios may serve as tracer of sources

High temperature XRD of Cu{sub 2.1}Zn{sub 0.9}SnSe{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chetty, Raju, E-mail: rcmallik@physics.iisc.ernet.in; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in

2014-04-24

Quaternary compound with chemical composition Cu{sub 2.1}Zn{sub 0.9}SnSe{sub 4} is prepared by solid state synthesis. High temperature XRD (X-Ray Diffraction) of this compound is used in studying the effect of temperature on lattice parameters and thermal expansion coefficients. Thermal expansion coefficient is one of the important quantities in evaluating the Grüneisen parameter which further useful in determining the lattice thermal conductivity of the material. The high temperature XRD of the material revealed that the lattice parameters as well as thermal expansion coefficients of the material increased with increase in temperature which confirms the presence of anharmonicty.

Electronic structure and linear optical properties of ZnSe and ZnSe:Mn.

PubMed

Su, Kang; Wang, Yuhua

2010-03-01

As an important wide band-gap II-VI semiconductor, ZnSe has attracted much attention for its various applications in photo-electronic devices such as blue light-emitting diodes and blue-green diode lasers. Mn-doped ZnSe is an excellent quantum dot material. The electronic structures of the sphalerite ZnSe and ZnSe:Mn were calculated using the Vienna ab initio Simulation Package with ultra-soft pseudo potentials and Material Studio. The calculated equilibrium lattice constants agree well with the experimental values. Using the optimized equilibrium lattice constants, the densities of states and energy band structures were further calculated. By analyzing the partial densities of states, the contributions of different electron states in different atoms were estimated. The p states of Zn mostly contribute to the top of the valence band, and the s states of Zn and the s states of Se have major effects on the bottom of the conduction band. The calculated results of ZnSe:Mn show the band gap was changed from 2.48 to 1.1 eV. The calculated linear optical properties, such as refractive index and absorption spectrum, are in good agreement with experimental values.

Wet Pretreatment-Induced Modification of Cu(In,Ga)Se2/Cd-Free ZnTiO Buffer Interface.

PubMed

Hwang, Suhwan; Larina, Liudmila; Lee, Hojin; Kim, Suncheul; Choi, Kyoung Soon; Jeon, Cheolho; Ahn, Byung Tae; Shin, Byungha

2018-06-20

We report a novel Cd-free ZnTiO buffer layer deposited by atomic layer deposition for Cu(In,Ga)Se 2 (CIGS) solar cells. Wet pretreatments of the CIGS absorbers with NH 4 OH, H 2 O, and/or aqueous solution of Cd 2+ ions were explored to improve the quality of the CIGS/ZnTiO interface, and their effects on the chemical state of the absorber and the final performance of Cd-free CIGS devices were investigated. X-ray photoelectron spectroscopy (XPS) analysis revealed that the aqueous solution etched away sodium compounds accumulated on the CIGS surface, which was found to be detrimental for solar cell operation. Wet treatment with NH 4 OH solution led to a reduced photocurrent, which was attributed to the thinning (or removal) of an ordered vacancy compound (OVC) layer on the CIGS surface as evidenced by an increased Cu XPS peak intensity after the NH 4 OH treatment. However, the addition of Cd 2+ ions to the NH 4 OH aqueous solution suppressed the etching of the OVC by NH 4 OH, explaining why such a negative effect of NH 4 OH is not present in the conventional chemical bath deposition of CdS. The band alignment at the CIGS/ZnTiO interface was quantified using XPS depth profile measurements. A small cliff-like conduction band offset of -0.11 eV was identified at the interface, which indicates room for further improvement of efficiency of the CIGS/ZnTiO solar cells once the band alignment is altered to a slight spike by inserting a passivation layer with a higher conduction band edge than ZnTiO. Combination of the small cliff conduction band offset at the interface, removal of the Na compound via water, and surface doping by Cd ions allowed the application of ZnTiO buffer to CIGS treated with Cd solutions, exhibiting an efficiency of 80% compared to that of a reference CIGS solar cell treated with the CdS.

Electronic and elemental properties of the Cu2ZnSn(S,Se)4 surface and grain boundaries

NASA Astrophysics Data System (ADS)

Haight, Richard; Shao, Xiaoyan; Wang, Wei; Mitzi, David B.

2014-01-01

X-ray and femtosecond UV photoelectron spectroscopy, secondary ion mass spectrometry and photoluminescence imaging were used to investigate the electronic and elemental properties of the CZTS,Se surface and its oxides. Oxide removal reveals a very Cu poor and Zn rich surface relative to bulk composition. O and Na are observed at the surface and throughout the bulk. Upward bending of the valence bands indicates the presence of negative charge in the surface region and the Fermi level is found near the band gap center. The presence of point defects and the impact of these findings on grain boundary properties will be described.

Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers

NASA Astrophysics Data System (ADS)

Tu, Ru-Chin; Su, Yan-Kuin; Huang, Ying-Sheng; Chen, Giin-Sang; Chou, Shu-Tsun

1998-09-01

Detailed structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinementheterostructures (SCH) grown on ZnSe, ZnSe/ZnSSe strained-layer superlattices (SLS),and GaAs buffer layers at the II VI/GaAs interface have been carried out by employingtransmission electron microscopy, variable temperature photoluminescence (PL), andcontactless electroreflectance (CER) measurements. A significant improvement onthe defect reduction and the optical quality has been observed by using either theZnSe/ZnSSe SLS or GaAs as the buffer layers when compared to that of the sample usingonly ZnSe as the buffer layer. However, the sample grown with the SLS buffer layersreveals a room temperature PL intensity higher than that of the sample grown witha GaAs buffer layer, which may still suffer from the great ionic differences betweenthe II V and III V atoms. Using 15 K CER spectra, we have also studied variousexcitonic transitions originating from strained Zn0.80Cd0.20Se/ZnSe single quantumwell in SCH with different buffer layers. An analysis of the CER spectra has ledto the identification of various excitonic transitions, mnH (L), between the mthconduction band state and the nth heavy (light)-hole band state. An excellentagreement between experiments and theoretical calculations based on the envelopefunction approximation model has been achieved.

Chromium Diffusion Doping on ZnSe Crystals

NASA Technical Reports Server (NTRS)

Journigan, Troy D.; Chen, K.-T.; Chen, H.; Burger, A.; Schaffers, K.; Page, R. H.; Payne, S. A.

1997-01-01

Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.

Energy band-gap calculations of short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices

NASA Astrophysics Data System (ADS)

Wu, Yi-hong; Fujita, Shizuo; Fujita, Shigeo

1990-01-01

We report on the calculations of energy band gaps based on the semiempirical tight-binding model for short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices (SLSs). During the calculation, much attention has been paid to the modeling of strain effect. It is found that (ZnTe)m(ZnSe)n superlattices grown on InAs, InP, and GaAs substrates show very different electronic properties from each other, which is consistent with experimental results now available. Assuming that the emission observed for (ZnTe)m(ZnSe)n SLS originates from intrinsic luminescence, we obtain an unstrained valence-band offset of 1.136±0.1 eV for this superlattice. On the other hand, the band gap of (ZnS)m(ZnSe)n superlattice grown coherently on GaP is found to exhibit a much stronger structure dependence than that grown coherently on GaAs. The difference of energy gap between superlattice with equal monolayers (m=n) and the corresponding alloy with equal chalcogenide composition is also discussed.

H2 gas sensing properties of a ZnO/CuO and ZnO/CuO/Cu2O Heterostructures

NASA Astrophysics Data System (ADS)

Ababii, N.; Postica, V.; Hoppe, M.; Adelung, R.; Lupan, O.; Railean, S.; Pauporté, T.; Viana, B.

2017-03-01

The most important parameters of gas sensors are sensitivity and especially high selectivity to specific chemical species. To improve these parameters we developed sensor structures based on layered semiconducting oxides, namely CuO/Cu2O, CuO:Zn/Cu2O:Zn, NiO/ZnO. In this work, the ZnO/CuxO (where x = 1, 2) bi-layer heterostructure were grown via a simple synthesis from chemical solution (SCS) at relatively low temperatures (< 95 °C), representing a combination of layered n-type and p-type semiconducting oxides which are widely used as sensing material for gas sensors. The main advantages of the developed device structures are given by simplicity of the synthesis and technological cost-efficiency. Structural investigations showed high crystallinity of synthesized layers confirming the presence of zinc oxide nanostructures on the surface of the copper oxide film deposited on glass substrate. Structural changes in morphology of grown nanostructures induced by post-grown thermal annealing were observed by scanning electron microscopy (SEM) investigations, and were studied in detail. The influence of thermal annealing type on the optical properties was also investigated. As an example of practical applications, the ZnO/CuxO bi-layer heterojunctions and ZnO/CuO/Cu2O three-layered structures were integrated into sensor structures and were tested to different types of reducing gases at different operating temperatures (OPT), showing promising results for fabrication of selective gas sensors.

Cyclotron production of 61Cu using natural Zn & enriched 64Zn targets

NASA Astrophysics Data System (ADS)

Asad, A. H.; Smith, S. V.; Chan, S.; Jeffery, C. M.; Morandeau, L.; Price, R. I.

2012-12-01

Copper-61 (61Cu) shares with 64Cu certain advantages for PET diagnostic imaging, but has a shorter half-life (3.4hr vs. 12.7hr) and a greater probability of positron production per disintegration (61% vs. 17.9%). One important application is for in vivo imaging of hypoxic tissue. In this study 61Cu was produced using the 64Zn(p,α)61Cu reaction on natural Zn or enriched 64Zn targets. The enriched 64Zn (99.82%) was electroplated onto high purity gold or silver foils or onto thin Al discs. A typical target bombardment used 30μA; at 11.7, 14.5 or 17.6MeV over 30-60min. The 61Cu (radiochemical purity of >95%) was separated using a combination of cation and anion exchange columns. The 64Zn target material was recovered after each run, for re-use. In a direct comparison with enriched 64Zn-target results, 61Cu production using the cheaper natZn target proved to be an effective alternative.

Effect of Pressure on the Stability and Electronic Structure of ZnO0.5S0.5 and ZnO0.5Se0.5

NASA Astrophysics Data System (ADS)

Manotum, R.; Klinkla, R.; Phaisangittisakul, N.; Pinsook, U.; Bovornratanaraks, T.

2017-12-01

Structures and high-pressure phase transitions in ZnO0.5S0.5 and ZnO0.5Se0.5 have been investigated using density functional theory calculations. The previously proposed structures of ZnO0.5S0.5 and ZnO0.5Se0.5 which are chalcopyrite ( I\\bar{4}2d ), rocksalt ( Fm3m ), wurtzite ( P63 mc ) and CuAu-I ( P\\bar{4}m2 ) have been fully investigated. Stabilities of these materials have been systematically studied up to 40 GPa using various approaches. We have confirmed the stability of the chalcopyrite structure up to 30 GPa for which the CuAu-I structure has been previously proposed. However, our calculation revealed that CuAu-I is not a stable structure under 32 GPa and 33 GPa for both ZnO0.5S0.5 and ZnO0.5Se0.5, respectively, which could explain the failure in several attempts to fabricate these materials under such conditions. We have also examined the pressure-dependence of the bandgap and electronic structure up to 30 GPa. We can conclude from our PDOS analysis that the applied pressure does not change the atomic state characters of electronic states near the top of valence and the bottom of conduction bands, but mainly modifies the dominant Zn-3d atomic state of the deep Bloch state at -1 eV below Fermi level.

Relative populations of excited levels within the ground configuration of Si-like Cu, Zn, Ge and Se ions

NASA Technical Reports Server (NTRS)

Datla, R. U.; Roberts, J. R.; Bhatia, A. K.

1991-01-01

Populations of 3p2 1D2, 3P1, 3P2 levels in Si-like Cu, Zn, Ge, and Se ions have been deduced from the measurements of absolute intensities of magnetic dipole transitions within the 3s2 3p2 ground configuration. The measured population ratios are compared with theoretical calculations based on the distorted-wave approximation for the electron collisions and a semiclassical approximation for the proton collisions. The observed deviation from the statistical distribution for the excited-level populations within the ground configuration along the silicon isoelectronic sequence is in agreement with theoretical prediction.

Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

NASA Astrophysics Data System (ADS)

Kim, Jekyung; Shin, Byungha

2017-09-01

Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

Semi-empirical device model for Cu2ZnSn(S,Se)4 solar cells

NASA Astrophysics Data System (ADS)

Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B.

2014-07-01

We present a device model for the hydrazine processed kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell with a world record efficiency of ˜12.6%. Detailed comparison of the simulation results, performed using wxAMPS software, to the measured device parameters shows that our model captures the vast majority of experimental observations, including VOC, JSC, FF, and efficiency under normal operating conditions, and temperature vs. VOC, sun intensity vs. VOC, and quantum efficiency. Moreover, our model is consistent with material properties derived from various techniques. Interestingly, this model does not have any interface defects/states, suggesting that all the experimentally observed features can be accounted for by the bulk properties of CZTSSe. An electrical (mobility) gap that is smaller than the optical gap is critical to fit the VOC data. These findings point to the importance of tail states in CZTSSe solar cells.

Structure and properties of ZnSxSe1-x thin films deposited by thermal evaporation of ZnS and ZnSe powder mixtures

NASA Astrophysics Data System (ADS)

Valeev, R. G.; Romanov, E. A.; Vorobiev, V. L.; Mukhgalin, V. V.; Kriventsov, V. V.; Chukavin, A. I.; Robouch, B. V.

2015-02-01

Interest to ZnSxSe1-x alloys is due to their band-gap tunability varying S and Se content. Films of ZnSxSe1-x were grown evaporating ZnS and ZnSe powder mixtures onto SiO2, NaCl, Si and ITO substrates using an original low-cost method. X-ray diffraction patterns and Raman spectroscopy, show that the lattice structure of these films is cubic ZnSe-like, as S atoms replace Se and film compositions have their initial S/Se ratio. Optical absorption spectra show that band gap values increase from 2.25 to 3 eV as x increases, in agreement with the literature. Because S atomic radii are smaller than Se, EXAFS spectra confirm that bond distances and Se coordination numbers decrease as the Se content decreases. The strong deviation from linearity of ZnSe coordination numbers in the ZnSxSe1-x indicate that within this ordered crystal structure strong site occupation preferences occur in the distribution of Se and S ions. The behavior is quantitatively confirmed by the strong deviation from the random Bernoulli distribution of the three sight occupation preference coefficients of the strained tetrahedron model. Actually, the ternary ZnSxSe1-x system is a bi-binary (ZnS+ZnSe) alloy with evanescent formation of ternary configurations throughout the x-range.

Thermally stimulated properties in ZnSe:Tb and ZnSe:(Mn, Tb) phosphors

NASA Astrophysics Data System (ADS)

Mishra, A. K.; Mishra, S. K.; Pandey, S. P.; Lakshmi Mishra, Kshama

2018-02-01

Thermoluminescence studies were performed of ZnSe:Tb and ZnSe:(Mn, Tb) phosphors. A method of preparation for ZnSe phosphors doped with Tb and (Mn, Tb) has been discussed. The thermoluminescence (TL) properties of these phosphors have been studied from 100 to 370 K temperature after exciting by UV radiation (365 nm) at three uniform heating rates 0.4, 0.6 and 0.9 K/s. The trapping parameters like trap depth, lifetime of electrons and capture cross-section have also been determined using various methods.

Chemical Synthesis of ZnS:Cu Nanosheets

NASA Astrophysics Data System (ADS)

Bodo, Bhaskarjyoti; Kalita, P. K.

2010-10-01

ZnS thin films are synthesized through chemical bath deposition (CBD) technique from aqueous solution of ZnSO4 and thiourea mixing in equal volume and equimolar ratio. A 1% CuSO4 solution is mixed with the ZnSO4 solution for doping before the final chemical reaction. SEM image shows the formation of mainly nanosheets, teeth and comb like structures. Absorption studies show red shift of enhanced band gap on Cu doping. Photoluminescence of ZnS:Cu reveals the enhancement of blue luminescence at 468 nm and low intensity green emission at 493 nm which is attributed to more Cu2+ lying in the interstices. XRD shows that the prepared ZnS nanophosphors possess cubic zinc blende structures.

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

NASA Technical Reports Server (NTRS)

Wang, Ling Jun

1998-01-01

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence

Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Gokmen, Tayfun; Warren, Charles W.; Cohen, J. David; Todorov, Teodor K.; Barkhouse, D. Aaron R.; Bag, Santanu; Tang, Jiang; Shin, Byungha; Mitzi, David B.

2012-06-01

Admittance spectra and drive-level-capacitance profiles of several high performance Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with bandgap ˜1.0-1.5 eV are reported. In contrast to the case for Cu(In,Ga)(S,Se)2, the CZTSSe capacitance spectra exhibit a dielectric freeze out to the geometric capacitance plateau at moderately low frequencies and intermediate temperatures (120-200 K). These spectra reveal important information regarding the bulk properties of the CZTSSe films, such as the dielectric constant and a dominant acceptor with energy level of 0.13-0.2 eV depending on the bandgap. This deep acceptor leads to a carrier freeze out effect that quenches the CZTSSe fill factor and efficiency at low temperatures.

CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type In x Ga1- x N Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Chen, Wei-Liang; Kuo, Dong-Hau; Tuan, Thi Tran Anh

2017-03-01

Cu2ZnSnSe4 (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu-Zn-Sn metal target, followed by two-step post-selenization at 500-600°C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In0.15Ga0.85N/GaN/CZTSe and In0.15Ga0.85N/In0.3Ga0.7N/CZTSe. The p-type CZTSe and the n-type In x Ga1- x N films were characterized. The properties of CZTSe changed with the selenization temperature and the In x Ga1- x N with its indium content. With the CdS-free modeling for a solar cell structure, the In0.15Ga0.85N/In0.3Ga0.7N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. Current density of ˜48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves that sputtered III-nitride films have their merits.

Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

NASA Astrophysics Data System (ADS)

Miller, D. Westley; Warren, Charles W.; Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.; Cohen, J. David

2012-10-01

Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)4 absorber devices with varying Se:S ratios, providing bandgaps (Eg) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with Eg ≤ 1.2 eV and were near 6.5% for devices with Eg ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices.

Copper Selenidophosphates Cu4P2Se6, Cu4P3Se4, Cu4P4Se3, and CuP2Se, Featuring Zero-, One-, and Two-Dimensional Anions.

PubMed

Kuhn, Alexander; Schoop, Leslie M; Eger, Roland; Moudrakovski, Igor; Schwarzmüller, Stefan; Duppel, Viola; Kremer, Reinhard K; Oeckler, Oliver; Lotsch, Bettina V

2016-08-15

Five new compounds in the Cu/P/Se phase diagram have been synthesized, and their crystal structures have been determined. The crystal structures of these compounds comprise four previously unreported zero-, one-, and two-dimensional selenidophosphate anions containing low-valent phosphorus. In addition to two new modifications of Cu4P2Se6 featuring the well-known hexaselenidohypodiphosphate(IV) ion, there are three copper selenidophosphates with low-valent P: Cu4P3Se4 contains two different new anions, (i) a monomeric (zero-dimensional) selenidophosphate anion [P2Se4](4-) and (ii) a one-dimensional selenidophosphate anion [Formula: see text], which is related to the well-known gray-Se-like [Formula: see text] Zintl anion. Cu4P4Se3 contains one-dimensional [Formula: see text] polyanions, whereas CuP2Se contains the 2D selenidophosphate [Formula: see text] polyanion. It consists of charge-neutral CuP2Se layers separated by a van der Waals gap which is very rare for a Zintl-type phase. Hence, besides black P, CuP2Se constitutes a new possible source of 2D oxidized phosphorus containing layers for intercalation or exfoliation experiments. Additionally, the electronic structures and some fundamental physical properties of the new compounds are reported. All compounds are semiconducting with indirect band gaps of the orders of around 1 eV. The phases reported here add to the structural diversity of chalcogenido phosphates. The structural variety of this family of compounds may translate into a variety of tunable physical properties.

Complete transformation of ZnO and CuO nanoparticles in ...

EPA Pesticide Factsheets

Here, we present evidence on complete transformation of ZnO and CuO nanoparticles, which are among the most heavily studied metal oxide particles, during 24 h in vitro toxicological testing with human T-lymphocytes. Synchrotron radiation-based X-ray absorption near edge structure (XANES) spectroscopy results revealed that Zn speciation profiles of 30 nm and 80 nm ZnO nanoparticles, and ZnSO4- exposed cells were almost identical with the prevailing species being Zn-cysteine. This suggests that ZnO nanoparticles are rapidly transformed during a standard in vitro toxicological assay, and are sequestered intracellularly, analogously to soluble Zn. Complete transformation of ZnO in the test conditions was further supported by almost identical Zn spectra in medium to which ZnO nanoparticles or ZnSO4 was added. Likewise, Cu XANES spectra for CuO and CuSO4-exposed cells and cell culture media were similar. These results together with our observation on similar toxicological profiles of ZnO and soluble Zn, and CuO and soluble Cu, underline the importance of dissolution and subsequent transformation of ZnO and CuO nanoparticles during toxicological testing and provide evidence that the nano-specific effect of ZnO and CuO nanoparticulates is negligible in this system. We strongly suggest to account for this aspect when interpreting the toxicological results of ZnO and CuO nanoparticles. Although a number of studies have discussed the transformation of nanoparticles during

Kesterite Cu2ZnSn(S,Se)4 Solar Cells with beyond 8% Efficiency by a Sol-Gel and Selenization Process.

PubMed

Liu, Fangyang; Zeng, Fangqin; Song, Ning; Jiang, Liangxing; Han, Zili; Su, Zhenghua; Yan, Chang; Wen, Xiaoming; Hao, Xiaojing; Liu, Yexiang

2015-07-08

A facile sol-gel and selenization process has been demonstrated to fabricate high-quality single-phase earth abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic absorbers. The structure and band gap of the fabricated CZTSSe can be readily tuned by varying the [S]/([S] + [Se]) ratios via selenization condition control. The effects of [S]/([S] + [Se]) ratio on device performance have been presented. The best device shows 8.25% total area efficiency without antireflection coating. Low fill factor is the main limitation for the current device efficiency compared to record efficiency device due to high series resistance and interface recombination. By improving film uniformity, eliminating voids, and reducing the Mo(S,Se)2 interfacial layer, a further boost of the device efficiency is expected, enabling the proposed process for fabricating one of the most promising candidates for kesterite solar cells.

Interfacial Phenomena in Al/Al, Al/Cu, and Cu/Cu Joints Soldered Using an Al-Zn Alloy with Ag or Cu Additions

NASA Astrophysics Data System (ADS)

Pstruś, Janusz; Gancarz, Tomasz

2014-05-01

The studies of soldered joints were carried out in systems: Al/solder/Al, Al/solder/Cu, Cu/solder/Cu, where the solder was (Al-Zn)EUT, (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Ag and (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Cu addition. Brazing was performed at 500 °C for 3 min. The EDS analysis indicated that the composition of the layers starting from the Cu pad was CuZn, Cu5Zn8, and CuZn4, respectively. Wetting tests were performed at 500 °C for 3, 8, 15, and 30 min, respectively. Thickness of the layers and their kinetics of growth were measured based on the SEM micrographs. The formation of interlayers was not observed from the side of Al pads. On the contrary, dissolution of the Al substrate and migration of Al-rich particles into the bulk of the solder were observed.

Glassy behavior of diluted Cu-Zn ferrites

NASA Astrophysics Data System (ADS)

Akhter, Shahida; Hakim, M. A.; Hoque, S. M.; Mathieu, R.; Nordblad, P.

2018-04-01

The magnetic behavior of Zn substituted Cu-Zn spinel ferrites having chemical formula Cu1-xZnxFe2O4 (x = 0.7, 0.8, 0.9 and 1.0) has been studied by SQUID magnetometry, by means of magnetic hysteresis, field-cooled (FC) and zero-field-cooled (ZFC) magnetization, memory effect and low field ac susceptibility measurements. These measurements suggest that the ferrimagnetic phase of the x ≤ 0.8 samples is gradually turned into a spin glass (x ≥ 0.9). The compound with x = 0.9 exhibits the typical dynamical behavior of spin glasses, with indication of aging, rejuvenation and memory effects. The evolution of the magnetic properties of Cu-Zn spinel ferrites with substitution of Zn for Cu is discussed.

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications

DOE PAGES

Park, Kwangwook; Beaton, Daniel; Steirer, Kenneth X.; ...

2017-01-27

Here, we investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in themore » underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.« less

The effect of defect emissions on enhancement photocatalytic performance of ZnSe QDs and ZnSe/rGO nanocomposites

NASA Astrophysics Data System (ADS)

Yousefi, Ramin; Azimi, H. R.; Mahmoudian, M. R.; Basirun, Wan Jeffrey

2018-03-01

A systematic study about the origin of defects emission of ZnSe structure was conducted by photoluminescence (PL) spectrometer at room temperature. It was observed that different intermediate energy levels in band-gap space of ZnSe structure were generated by different defects such as Se-, Zn-vacancies, Se-, Zn-interstitials, and surface states. Effects of these defects on the photocatalytic performance of ZnSe quantum dots (QDs) and ZnSe/graphene nanocomposites were investigated. The pristine ZnSe QDs and ZnSe/graphene nanocomposites were synthesized by a co-precipitation method. The PL spectra of the samples showed four emissions from four regions of the visible spectrum such as violet, green, orange, and red emissions. The violet emission was associated with the near-band-edge (NBE) of the ZnSe nanostructures, while, the other emissions were related to different defects of ZnSe structures. Annealing the samples in the H2 atmosphere caused to increase orange emission intensity and indicated that origin of orange emission was a donor-acceptor pair (DAPs) related to singly positively charged Se-vacancies (VSe) to singly negatively charged zinc vacancy (VZn-). Photocatalytic study of the samples to remove the methylene blue (MB) dye showed that the photocatalytic performance of the samples improved by graphene as an additive and increasing the orange emission intensity.

All-wurtzite ZnO/ZnSe hetero-nanohelix: formation, mechanics and luminescence

NASA Astrophysics Data System (ADS)

Sun, Luwei; Ye, Zhizhen; He, Haiping

2015-04-01

A unique all-wurtzite ZnO/ZnSe hetero-nanohelix is formed via growing wurtzite ZnSe nanoteeth on ZnO nanobelts through a one step thermal evaporation method. The microstructure and growth mechanism of the hetero-nanohelix are investigated in detail. The formation of metastable wurtzite ZnSe is attributed to the wurtzite ZnO template. Mechanical forces, thermal expansion and polar plane in hexagonal crystals are suggested to contribute to the bending of the nanohelix. A boomerang-like structural block is proposed to assemble the zigzag ZnO nanobelts. The incorporation of Se into ZnO results in a strong orange emission. The heterostructure of the ZnO/ZnSe nanohelix is confirmed by elemental mapping and luminescence imaging. The fabrication of such a hetero-nanohelix may provide insights into the growth mechanism of the rich family of ZnO-based nanostructures.A unique all-wurtzite ZnO/ZnSe hetero-nanohelix is formed via growing wurtzite ZnSe nanoteeth on ZnO nanobelts through a one step thermal evaporation method. The microstructure and growth mechanism of the hetero-nanohelix are investigated in detail. The formation of metastable wurtzite ZnSe is attributed to the wurtzite ZnO template. Mechanical forces, thermal expansion and polar plane in hexagonal crystals are suggested to contribute to the bending of the nanohelix. A boomerang-like structural block is proposed to assemble the zigzag ZnO nanobelts. The incorporation of Se into ZnO results in a strong orange emission. The heterostructure of the ZnO/ZnSe nanohelix is confirmed by elemental mapping and luminescence imaging. The fabrication of such a hetero-nanohelix may provide insights into the growth mechanism of the rich family of ZnO-based nanostructures. Electronic supplementary information (ESI) available: HRTEM image, EDS elemental mapping, XRD data, and calculation of bending mechanics. See DOI: 10.1039/c5nr00567a

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

NASA Astrophysics Data System (ADS)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Investigation of the 66Zn(p,2pn) 64Cu and 68Zn(p,x) 64Cu nuclear processes up to 100 MeV: Production of 64Cu

NASA Astrophysics Data System (ADS)

Szelecsényi, F.; Steyn, G. F.; Kovács, Z.; Vermeulen, C.; van der Meulen, N. P.; Dolley, S. G.; van der Walt, T. N.; Suzuki, K.; Mukai, K.

2005-11-01

Cross-sections of the 66Zn(p,2pn)64Cu and 68Zn(p,x)64Cu nuclear processes were measured on highly enriched zinc targets using the stacked-foil activation technique up to 100 MeV. The new cross-sections were compared to literature data. The optimum energy range for production of 64Cu was found to be 70 → 35 MeV on 66Zn and 37 → 20 MeV on 68Zn. The thick-target yields were determined as 777 MBq/μAh (21.0 mCi/μAh) and 185 MBq/μAh (5.0 mCi/μAh), respectively. The yields of the longer-lived contaminant copper radioisotopes (i.e. 61Cu when using 66Zn as target material and both 61Cu and 67Cu in the case of 68Zn target material) were also calculated. The results obtained from the present study indicate that both reactions are suited for the production of 64Cu at a medium energy cyclotron. The optimum energy ranges are also complementary therefore the potential to utilize tandem targetry exists.

Reduced Cu(InGa)Se 2 Thickness in Solar Cells Using a Superstrate Configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shafarman, William N.

This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se 2 manufacturing by reducing the thickness of the Cu(InGa)Se 2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se 2 thicknesses less than 1 µm. The primary objective wasmore » to demonstrate a Cu(InGa)Se 2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se 2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se 2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of

Optimization of Cu-Zn Massive Sulphide Flotation by Selective Reagents

NASA Astrophysics Data System (ADS)

Soltani, F.; Koleini, S. M. J.; Abdollahy, M.

2014-10-01

Selective floatation of base metal sulphide minerals can be achieved by using selective reagents. Sequential floatation of chalcopyrite-sphalerite from Taknar (Iran) massive sulphide ore with 3.5 % Zn and 1.26 % Cu was studied. D-optimal design of response surface methodology was used. Four mixed collector types (Aer238 + SIPX, Aero3477 + SIPX, TC1000 + SIPX and X231 + SIPX), two depressant systems (CuCN-ZnSO4 and dextrin-ZnSO4), pH and ZnSO4 dosage were considered as operational factors in the first stage of flotation. Different conditions of pH, CuSO4 dosage and SIPX dosage were studied for sphalerite flotation from first stage tailings. Aero238 + SIPX induced better selectivity for chalcopyrite against pyrite and sphalerite. Dextrin-ZnSO4 was as effective as CuCN-ZnSO4 in sphalerite-pyrite depression. Under optimum conditions, Cu recovery, Zn recovery and pyrite content in Cu concentrate were 88.99, 33.49 and 1.34 % by using Aero238 + SIPX as mixed collector, CuCN-ZnSO4 as depressant system, at ZnSO4 dosage of 200 g/t and pH 10.54. When CuCN was used at the first stage, CuSO4 consumption increased and Zn recovery decreased during the second stage. Maximum Zn recovery was 72.19 % by using 343.66 g/t of CuSO4, 22.22 g/t of SIPX and pH 9.99 at the second stage.

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

NASA Astrophysics Data System (ADS)

Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

2018-03-01

In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

Selenium, zinc, copper, Cu/Zn ratio and total antioxidant status in the serum of vitiligo patients treated by narrow-band ultraviolet-B phototherapy.

PubMed

Wacewicz, Marta; Socha, Katarzyna; Soroczyńska, Jolanta; Niczyporuk, Marek; Aleksiejczuk, Piotr; Ostrowska, Jolanta; Borawska, Maria H

2018-03-01

Vitiligo is a chronic, depigmenting skin disorder, whose pathogenesis is still unknown. Narrow band ultraviolet-B (NB-UVB) is now one of the most widely used treatment of vitiligo. It was suggested that trace elements may play a role in pathogenesis of vitiligo. The aim of this study was to estimate the concentration of selenium (Se), zinc (Zn), copper (Cu) and Cu/Zn ratio as well as total antioxidant status (TAS) in the serum of patients with vitiligo. We assessed 50 patients with vitiligo and 58 healthy controls. Serum levels of Se, Zn and Cu were determined by the atomic absorption spectrometry method, and the Cu/Zn ratio was also calculated. TAS in serum was measured spectrophotometrically. Serum concentration of Se in patients with vitiligo before and after phototherapy was significantly lower as compared to the control group. Zn level in the serum of patients decreased significantly after phototherapy. We observed higher Cu/Zn ratio (p < .05) in examined patients than in the control group and after NB-UVB. We have found decrease in TAS in the serum of vitiligo patients after NB-UVB. The current study showed some disturbances in the serum levels of trace elements and total antioxidant status in vitiligo patients.

Combinatorial investigation of the effects of sodium on Cu 2ZnSnSe4 polycrystalline thin films

NASA Astrophysics Data System (ADS)

Gibbs, Alex Hilton

Cu2ZnSnSe4 (CZTSe) possess highly suitable optical and electronic properties for use as an absorber layer in thin film solar cells. CZTSe also has potential to achieve terawatt level solar energy production due to its inexpensive and abundant material constituents. Currently, fabricating CZTSe devices with the expected theoretical performance has not been achieved, making the growth and formation of CZTSe an interesting topic of research. In this work, a two-step vacuum fabrication process consisting of RF co-sputtering followed by reactive annealing was explored as a viable technique for synthesizing CZTSe thin films. Furthermore, the enhancement of the fabrication process by the incorporation of sodium during annealing was studied using a combinatorial approach. Film composition was analyzed using electron dispersive spectroscopy. Structure, phase morphology, and formation were determined using scanning electron microscopy, x-ray diffraction, atomic force microscopy and raman spectroscopy. Optical and electronic properties were characterized using UV-Vis and Voc were measurements under a one sun solar simulator. RF co-sputtering CuSe, ZnSe, and SnSe precursors produced films with good thickness uniformity, adhesion and stoichiometry control over 3 x 3 in 2 substrates. Composition measurements showed that the precursor films maintained stability during an annealing process of 580° C for 20 minutes producing near stoichiometric CZTSe. However, grain size was small with an average diameter of 350 nm. The CZTSe film produced by this process exhibited a suitable absorption coefficient of > 104 cm-1 and aband gap near 1.0 eV. The film also produced an XRD pattern consistent with tetragonal CZTSe with no secondary phase formation with the exception of approximately 12.5 nm of interfacial MoSe2 formation at the back contact. The combinatorial investigation of the influence of sodium on CZTSe growth and morphology was achieved using a custom built constant withdraw

Point Defect Distributions in ZnSe Crystals: Effects of Gravity Vector Orientation During Physical Vapor Transport Growth

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Hirschfeld, D.; Smith, T. M.; Wang, Ling Jun; Volz, M. P.; Lehoczky, S. L.

1999-01-01

ZnSe crystals were grown by the physical vapor transport technique under horizontal and vertical (stabilized and destabilized) configurations. Secondary ion mass spectroscopy and photoluminescence measurements were performed on the grown ZnSe samples to map the distributions of [Si], [Fe], [Cu], [Al] and [Li or Na] impurities as well as Zn vacancy, [V (sub Zn)]. Annealings of ZnSe under controlled Zn pressures were studied to correlate the measured photoluminescence emission intensity to the equilibrium Zn partial pressure. In the horizontal grown crystals the segregations of [Si], [Fe], [Al] and [V (sub Zn)] were observed along the gravity vector direction whereas in the vertically stabilized grown crystal the segregation of these point defects was radially symmetrical. No apparent pattern was observed on the measured distributions in the vertically destabilized grown crystal. The observed segregations in the three growth configurations were interpreted based on the possible buoyancy-driven convection in the vapor phase.

Elastocaloric effect in CuAlZn and CuAlMn shape memory alloys under compression

PubMed Central

Qian, Suxin; Wang, Yi; Pillsbury, Thomas E.; Hada, Yoshiharu; Yamaguchi, Yuki; Fujimoto, Kenjiro; Hwang, Yunho; Radermacher, Reinhard; Cui, Jun; Yuki, Yoji; Toyotake, Koutaro; Takeuchi, Ichiro

2016-01-01

This paper reports the elastocaloric effect of two Cu-based shape memory alloys: Cu68Al16Zn16 (CuAlZn) and Cu73Al15Mn12 (CuAlMn), under compression at ambient temperature. The compression tests were conducted at two different rates to approach isothermal and adiabatic conditions. Upon unloading at a strain rate of 0.1 s−1 (adiabatic condition) from 4% strain, the highest adiabatic temperature changes (ΔTad) of 4.0 K for CuAlZn and 3.9 K for CuAlMn were obtained. The maximum stress and hysteresis at each strain were compared. The stress at the maximum recoverable strain of 4.0% for CuAlMn was 120 MPa, which is 70% smaller than that of CuAlZn. A smaller hysteresis for the CuAlMn alloy was also obtained, about 70% less compared with the CuAlZn alloy. The latent heat, determined by differential scanning calorimetry, was 4.3 J g−1 for the CuAlZn alloy and 5.0 J g−1 for the CuAlMn alloy. Potential coefficients of performance (COPmat) for these two alloys were calculated based on their physical properties of measured latent heat and hysteresis, and a COPmat of approximately 13.3 for CuAlMn was obtained. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’. PMID:27402936

Transport Properties of ZnSe- ITO Hetero Junction

NASA Astrophysics Data System (ADS)

Ichibakase, Tsuyoshi

In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The sample that ZnSe was prepared as 3.4 μm in case of ITO-ZnSe sample, has high density level at the junction surface. The ITO-ZnSe junction has two type of diffusion current. However, the ITO-ZnSe sample that ZnSe layer was prepared as 0.1 μm can be assumed as the ohmic contact, and ITO-ZnSe(0.1μm) -CdTe sample shows the avalanche breakdown, and it is considered that the avalanche breakdown occurs in CdTe layer. It is difficult to occur the avalanche breakdown, if ZnSe-CdTe junction has high-density level and CdTe layer has high-density defect. Hence, the ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. It found that ITO-ZnSe(0.1μm) substrate is available for the II-VI compounds semiconductor device through above analysis result.

A comparative study on charge carrier recombination across the junction region of Cu{sub 2}ZnSn(S,Se){sub 4} and Cu(In,Ga)Se{sub 2} thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halim, Mohammad Abdul, E-mail: halimtsukuba2012@gmail.com; Islam, Muhammad Monirul; Luo, Xianjia

A comparative study with focusing on carrier recombination properties in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) and the CuInGaSe{sub 2} (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decaymore » time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent V{sub OC} suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.« less

Room temperature ferromagnetism in Cu doped ZnO

NASA Astrophysics Data System (ADS)

Ali, Nasir; Singh, Budhi; Khan, Zaheer Ahmed; Ghosh, Subhasis

2018-05-01

We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition.

A Stable Plasmonic Cu@Cu2 O/ZnO Heterojunction for Enhanced Photocatalytic Hydrogen Generation.

PubMed

Lou, Yongbing; Zhang, Yake; Cheng, Lin; Chen, Jinxi; Zhao, Yixin

2018-05-09

The localized surface plasmon resonance (LSPR) effect has been widely utilized in photocatalysis, but most reported LSPR materials are based on noble metals of gold or silver with high chemical stability. Plasmonic copper nanoparticles that exhibit an LSPR absorbance at 600 nm are promising for many applications, such as photocatalysis. Unfortunately, plasmonic copper nanoparticles are affected by serious surface oxidation in air. Herein, a novel lollipop-shaped Cu@Cu 2 O/ZnO heterojunction nanostructure was designed, for the first time, to stabilize the plasmonic Cu core by decorating Cu@Cu 2 O core-shell structures with ZnO nanorods. This Cu@Cu 2 O/ZnO nanostructure exhibited significantly enhanced stability than that of regular Cu@Cu 2 O, which accounted for the remarkably enhanced photocatalytic H 2 evolution rate through water splitting, relative to pristine ZnO nanorods, over an extended wavelength range due to the plasmonic Cu core. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

Cadmium-free aqueous synthesis of ZnSe and ZnSe@ZnS core-shell quantum dots and their differential bioanalyte sensing potential

NASA Astrophysics Data System (ADS)

Mir, Irshad Ahmad; Rawat, Kamla; Bohidar, H. B.

2016-10-01

Herein we report a facile and cadmium-free approach to prepare water-soluble fluorescent ZnSe@ZnS core-shell quantum dots (QDs), using thioglycolic acid (TGA) ligand as a stabilizer and thiourea as a sulfur source. The optical properties and morphology of the obtained core-shell QDs were characterized by UV-vis and fluorescence spectroscopy, transmission electron microscopy (TEM), energy-dispersive x-ray analysis (EDX), x-ray diffraction (XRD), electrophoresis and dynamic light scattering (DLS) techniques. TEM analysis, and electrophoresis data showed that ZnSe core had an average size of 3.60 ± 0.12 nm and zeta potential of -38 mV; and for ZnSe@ZnS QDs, the mean size was 4.80 ± 0.20 nm and zeta potential was -45 mV. Compared to the core ZnSe QDs, the quantum yield of these core-shell structures was higher (13% versus 32%). These were interacted with five common bioanalytes such as, ascorbic acid, citric acid, oxalic acid, glucose and cholesterol which revealed fluorescence quenching due to concentration dependent binding of analytes to the core only, and core-shell QDs. The binding pattern followed the sequence: cholesterol < glucose < ascorbic acid < oxalic acid < citric acid for ZnSe, and cholesterol < glucose < oxalic acid < ascorbic acid < citric acid for core-shell QDs. Thus, enhanced binding was noticed for the analyte citric acid which may facilitate development of a fluorescence-based sensor based on the ZnSe core-only quantum dot platform. Further, the hydrophilic core-shell structure may find use in cell imaging applications.

Electrophoretic deposition of Cu2ZnSn(S0.5Se0.5)4 films using solvothermal synthesized nanoparticles

NASA Astrophysics Data System (ADS)

Badkoobehhezaveh, Amir Masoud; Abdizadeh, Hossein; Golobostanfard, Mohammad Reza

2018-01-01

In this paper, a simple, practical, and fast solvothermal route is presented for synthesizing the Cu2ZnSn(S0.5Se0.5)4 nanoparticles (CZTSSe). In this method, the precursors were dissolved in triethylenetetramine and placed in an autoclave at 240 °C for 1 h under controlled pressure and constant stirring. After washing the samples for several times with absolute ethanol, the obtained CZTSSe nanoparticles were successfully deposited on fluorine doped tin oxide substrates by convenient electrophoretic deposition (EPD) using colloidal nanoparticles. The most appropriate parameters for EPD of pre-synthesized CZTSSe nanoparticles which result in proper surface properties, controlled thickness, and high film quality are investigated by adjusting applied voltage, pH, and deposition time. X-ray diffraction pattern and Raman spectroscopy of the pre-synthesized nanoparticles show kesterite structure formation. The particle size of the CZTSSe nanoparticles is in the range of 100 to 400 nm and for some agglomerates, it is about 2 µm confirmed by scanning electron microscope. The deposited film with optimized parameter has acceptable quality without any crack in it with the thickness of about 4-5 µm. Energy-dispersive X-ray spectroscopy confirms that the chemical composition of the samples is in near stoichiometric Cu-poor and Zn-rich region, which guarantees the p-type character of the film. The diffuse reflectance spectroscopy also demonstrates that the optical band gap of the sample is about 1.2 eV.

Active sites for CO 2 hydrogenation to methanol on Cu/ZnO catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kattel, Shyam; Ramírez, Pedro J.; Chen, Jingguang G.

The active sites over commercial copper/zinc oxide/aluminum oxide (Cu/ZnO/Al 2O 3) catalysts for carbon dioxide (CO 2) hydrogenation to methanol, the Zn-Cu bimetallic sites or ZnO-Cu interfacial sites, have recently been the subject of intense debate. Here, we report a direct comparison between the activity of ZnCu and ZnO/Cu model catalysts for methanol synthesis. By combining x-ray photoemission spectroscopy, density functional theory, and kinetic Monte Carlo simulations, we can identify and characterize the reactivity of each catalyst. Both experimental and theoretical results agree that ZnCu undergoes surface oxidation under the reaction conditions so that surface Zn transforms into ZnO andmore » allows ZnCu to reach the activity of ZnO/Cu with the same Zn coverage. These results highlight a synergy of Cu and ZnO at the interface that facilitates methanol synthesis via formate intermediates.« less

Active sites for CO 2 hydrogenation to methanol on Cu/ZnO catalysts

DOE PAGES

Kattel, Shyam; Ramírez, Pedro J.; Chen, Jingguang G.; ...

2017-03-23

The active sites over commercial copper/zinc oxide/aluminum oxide (Cu/ZnO/Al 2O 3) catalysts for carbon dioxide (CO 2) hydrogenation to methanol, the Zn-Cu bimetallic sites or ZnO-Cu interfacial sites, have recently been the subject of intense debate. Here, we report a direct comparison between the activity of ZnCu and ZnO/Cu model catalysts for methanol synthesis. By combining x-ray photoemission spectroscopy, density functional theory, and kinetic Monte Carlo simulations, we can identify and characterize the reactivity of each catalyst. Both experimental and theoretical results agree that ZnCu undergoes surface oxidation under the reaction conditions so that surface Zn transforms into ZnO andmore » allows ZnCu to reach the activity of ZnO/Cu with the same Zn coverage. These results highlight a synergy of Cu and ZnO at the interface that facilitates methanol synthesis via formate intermediates.« less

Electrodeposition of CuZn Alloys from the Non-Cyanide Alkaline Baths

NASA Astrophysics Data System (ADS)

Li, Minggang; Wei, Guoying; Hu, Shuangshuang; Xu, Shuhan; Yang, Yejiong; Miao, Qinfang

2015-10-01

Effect of copper sulfate on CuZn alloys electroplating from non-cyanide baths are investigated by different electrochemical methods. Cyclic voltammetry and current transient measurements are used to characterize the CuZn alloys electroplating system in order to analyze the nucleation and growth mechanism. The reduction of Cu and CuZn alloy on sheet iron substrates shows an instantaneous nucleation process. However, the reduction of Zn on sheet iron substrates shows a progressive nucleation process. The structure and surface morphology of CuZn alloys are analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The morphology of CuZn alloys obtained with 50 g L-1 copper sulfate presents a smooth and compact deposit and the size of crystal particle is uniform.

Novel dimeric interface and electrostatic recognition in bacterial Cu,Zn superoxide dismutase

PubMed Central

Bourne, Yves; Redford, Susan M.; Steinman, Howard M.; Lepock, James R.; Tainer, John A.; Getzoff, Elizabeth D.

1996-01-01

Eukaryotic Cu,Zn superoxide dismutases (CuZnSODs) are antioxidant enzymes remarkable for their unusually stable β-barrel fold and dimer assembly, diffusion-limited catalysis, and electrostatic guidance of their free radical substrate. Point mutations of CuZnSOD cause the fatal human neurodegenerative disease amyotrophic lateral sclerosis. We determined and analyzed the first crystallographic structure (to our knowledge) for CuZnSOD from a prokaryote, Photobacterium leiognathi, a luminescent symbiont of Leiognathid fish. This structure, exemplifying prokaryotic CuZnSODs, shares the active-site ligand geometry and the topology of the Greek key β-barrel common to the eukaryotic CuZnSODs. However, the β-barrel elements recruited to form the dimer interface, the strategy used to forge the channel for electrostatic recognition of superoxide radical, and the connectivity of the intrasubunit disulfide bond in P. leiognathi CuZnSOD are discrete and strikingly dissimilar from those highly conserved in eukaryotic CuZnSODs. This new CuZnSOD structure broadens our understanding of structural features necessary and sufficient for CuZnSOD activity, highlights a hitherto unrecognized adaptability of the Greek key β-barrel building block in evolution, and reveals that prokaryotic and eukaryotic enzymes diverged from one primordial CuZnSOD and then converged to distinct dimeric enzymes with electrostatic substrate guidance. PMID:8917495

Trigonal Cu2-II-Sn-VI4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics.

PubMed

Hong, Feng; Lin, Wenjun; Meng, Weiwei; Yan, Yanfa

2016-02-14

We propose trigonal Cu2-II-Sn-VI4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant solar cell applications. Through density functional theory calculations, we show that these compounds exhibit similar electronic and optical properties to kesterite Cu2ZnSnS4 (CZTS): high optical absorption with band gaps suitable for efficient single-junction solar cell applications. However, the trigonal Cu2-II-Sn-VI4 compounds exhibit defect properties more suitable for photovoltaic applications than those of CZTS. In CZTS, the dominant defects are the deep acceptors, Cu substitutions on Zn sites, which cause non-radiative recombination and limit the open-circuit voltages of CZTS solar cells. On the contrary, the dominant defects in trigonal Cu2-II-Sn-VI4 are the shallow acceptors, Cu vacancies, similar to those in CuInSe2. Our results suggest that the trigonal Cu2-II-Sn-VI4 quaternary compounds could be promising candidates for efficient earth-abundant thin-film solar cell and photoeletrochemical water-splitting applications.

``Flash'' synthesis of ``giant'' Mn-doped CdS/ZnSe/ZnS nanocrystals with ZnSe layer as hole quantum-well

NASA Astrophysics Data System (ADS)

Xu, Ruilin; Zhang, Jiayu

Usually, exciton-Mn energy transfer in Mn-doped CdS/ZnS nanocrystals (NCs) can readily outcompete the exciton trapping by an order of magnitude. However, with the accumulation of non-radiative defects in the giant shell during the rapid growth of the thick shell (up to ~20 monolayers in no more than 10 minutes), the photoluminescence (PL) quantum yield of this kind of ``giant'' NCs is significantly reduced by the accumulation of non-radiative defects during the rapid growth of thick shell. That is because the exciton-Mn energy transfer in Mn-doped CdS/ZnS NCs is significantly inhibited by the hole trapping as the major competing process, resulting from the insufficient hole-confinement in CdS/ZnS NCs. Accordingly ``flash'' synthesis of giant Mn-doped CdS/ZnSe/ZnS NCs with ZnSe layer as hole quantum-well is developed to suppress the inhibition. Meanwhile Mn2+ PL peak changes profoundly from ~620 nm to ~540 nm after addition of ZnSe layer. Studies are under the way to explore the relevant mechanisms.

Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells

NASA Astrophysics Data System (ADS)

Tu, R. C.; Su, Y. K.; Lin, D. Y.; Li, C. F.; Huang, Y. S.; Lan, W. H.; Tu, S. L.; Chang, S. J.; Chou, S. C.; Chou, W. C.

1998-01-01

We have studied various excitonic transitions of strained Zn0.79Cd0.21Se/ZnSe double quantum wells, grown by molecular beam epitaxy on (100) GaAs substrates, using contactless electroreflectance (CER) at 15 and 300 K. A number of intersub-band transitions in the CER spectra from the sample have been observed. An analysis of the CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The conduction-band offset Qc is used as an adjustable parameter to study the band offset in the strained Zn0.79Cd0.21Se/ZnSe system. The value of Qc is determined to be 0.67±0.03.

Hydrogenation of CO 2 on ZnO/Cu(100) and ZnO/Cu(111) Catalysts: Role of Copper Structure and Metal–Oxide Interface in Methanol Synthesis

DOE PAGES

Palomino, Robert M.; Ramirez, Pedro J.; Liu, Zongyuan; ...

2017-08-21

The results of kinetic tests and ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) show the important role played by a ZnO–copper interface in the generation of CO and the synthesis of methanol from CO 2 hydrogenation. The deposition of nanoparticles of ZnO on Cu(100) and Cu(111), θ oxi < 0.3 monolayer, produces highly active catalysts. The catalytic activity of these systems increases in the sequence: Cu(111) < Cu(100) < ZnO/Cu(111) < ZnO/Cu(100). The structure of the copper substrate influences the catalytic performance of a ZnO–copper interface. Furthermore, size and metal–oxide interactions affect the chemical and catalytic properties of the oxide making themore » supported nanoparticles different from bulk ZnO. The formation of a ZnO–copper interface favors the binding and conversion of CO 2 into a formate intermediate that is stable on the catalyst surface up to temperatures above 500 K. Alloys of Zn with Cu(111) and Cu(100) were not stable at the elevated temperatures (500–600 K) used for the CO 2 hydrogenation reaction. However, reaction with CO 2 oxidized the zinc, enhancing its stability over the copper substrates.« less

Hydrogenation of CO 2 on ZnO/Cu(100) and ZnO/Cu(111) Catalysts: Role of Copper Structure and Metal–Oxide Interface in Methanol Synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palomino, Robert M.; Ramirez, Pedro J.; Liu, Zongyuan

The results of kinetic tests and ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) show the important role played by a ZnO–copper interface in the generation of CO and the synthesis of methanol from CO 2 hydrogenation. The deposition of nanoparticles of ZnO on Cu(100) and Cu(111), θ oxi < 0.3 monolayer, produces highly active catalysts. The catalytic activity of these systems increases in the sequence: Cu(111) < Cu(100) < ZnO/Cu(111) < ZnO/Cu(100). The structure of the copper substrate influences the catalytic performance of a ZnO–copper interface. Furthermore, size and metal–oxide interactions affect the chemical and catalytic properties of the oxide making themore » supported nanoparticles different from bulk ZnO. The formation of a ZnO–copper interface favors the binding and conversion of CO 2 into a formate intermediate that is stable on the catalyst surface up to temperatures above 500 K. Alloys of Zn with Cu(111) and Cu(100) were not stable at the elevated temperatures (500–600 K) used for the CO 2 hydrogenation reaction. However, reaction with CO 2 oxidized the zinc, enhancing its stability over the copper substrates.« less

Electrical and photoresponse properties of vacuum deposited Si/Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

NASA Astrophysics Data System (ADS)

Rao, Gowrish K.

2017-04-01

The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models.

Cyclotron production of {sup 61}Cu using natural Zn and enriched {sup 64}Zn targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asad, A. H.; Smith, S. V.; Chan, S.

2012-12-19

Copper-61 ({sup 61}Cu) shares with {sup 64}Cu certain advantages for PET diagnostic imaging, but has a shorter half-life (3.4hr vs. 12.7hr) and a greater probability of positron production per disintegration (61% vs. 17.9%). One important application is for in vivo imaging of hypoxic tissue. In this study {sup 61}Cu was produced using the {sup 64}Zn(p,{alpha}){sup 61}Cu reaction on natural Zn or enriched {sup 64}Zn targets. The enriched {sup 64}Zn (99.82%) was electroplated onto high purity gold or silver foils or onto thin Al discs. A typical target bombardment used 30{mu}A; at 11.7, 14.5 or 17.6MeV over 30-60min. The {sup 61}Cumore » (radiochemical purity of >95%) was separated using a combination of cation and anion exchange columns. The {sup 64}Zn target material was recovered after each run, for re-use. In a direct comparison with enriched {sup 64}Zn-target results, {sup 61}Cu production using the cheaper {sup nat}Zn target proved to be an effective alternative.« less

Compositional ratio effect on the surface characteristics of CuZn thin films

NASA Astrophysics Data System (ADS)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Ultra-thin ZnSe: Anisotropic and flexible crystal structure

NASA Astrophysics Data System (ADS)

Bacaksiz, C.; Senger, R. T.; Sahin, H.

2017-07-01

By performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal [11]. The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.

Elucidation of Two Giants: Challenges to Thick-shell Synthesis in CdSe/ZnSe and ZnSe/CdS Core/Shell Quantum Dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Acharya, Krishna P.; Nguyen, Hue M.; Paulite, Melissa

2015-03-06

Core/thick-shell "giant" quantum dots (gQDs) possessing type II electronic structures exhibit suppressed blinking and diminished nonradiative Auger recombination. Here we investigate CdSe/ZnSe and ZnSe/CdS as potential new gQDs. We show theoretically and experimentally that both can exhibit partial or complete spatial separation of an excited-state electron–hole pair (i.e., type II behavior). However, we reveal that thick-shell growth is challenged by competing processes: alloying and cation exchange. We demonstrate that these can be largely avoided by choice of shelling conditions (e.g., time, temperature, and QD core identity). The resulting CdSe/ZnSe gQDs exhibit unusual single-QD properties, principally emitting from dim gray statesmore » but having high two-exciton (biexciton) emission efficiencies, whereas ZnSe/CdS gQDs show characteristic gQD blinking suppression, though only if shelling is accompanied by partial cation exchange.« less

Interfaces of high-efficiency kesterite Cu2ZnSnS(e)4 thin film solar cells

NASA Astrophysics Data System (ADS)

Gao, Shoushuai; Jiang, Zhenwu; Wu, Li; Ao, Jianping; Zeng, Yu; Sun, Yun; Zhang, Yi

2018-01-01

Cu2ZnSnS(e)4 (CZTS(e)) solar cells have attracted much attention due to the elemental abundance and the non-toxicity. However, the record efficiency of 12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that of Cu(In,Ga)Se2 (CIGS) solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount investigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS(e) solar cells, including: (1) the band alignment optimization at buffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfacial layers between CZTS(e) absorber and Mo back contact, (3) the passivation of rear interface, (4) the passivation of front interface, and (5) the etching of secondary phases.

Fluorescence properties of alloyed ZnSeS quantum dots overcoated with ZnTe and ZnTe/ZnS shells

NASA Astrophysics Data System (ADS)

Adegoke, Oluwasesan; Mashazi, Philani; Nyokong, Tebello; Forbes, Patricia B. C.

2016-04-01

Fluorescent alloyed ternary ZnSeS quantum dots (QDs) have been synthesized via the pyrolysis of organometallic precursors. The effects of passivation of ZnTe and ZnTe/ZnS shells on the optical properties of the ternary alloyed ZnSeS core have been studied. A ligand exchange reaction using L-cysteine as a capping ligand was used to obtain water-soluble nanocrystals. The nanocrystals were each characterized by UV/vis absorption and fluorescence spectroscopy, transmission electron microscopy, X-ray diffractometry (XRD) and X-ray photoelectron spectroscopy (XPS). The photoluminescence (PL) quantum yield (QY) of alloyed ZnSeS QDs was 14% and this value increased to 27% when ZnTe was overcoated around the surface but further coating with a ZnS shell decreased the PL QY slightly to 24%. This implies that ZnTe shell suppressed non-radiative recombination exciton states in the alloyed core while further layering with a ZnS shell offered no further improvement in suppressing the defect states. XPS analysis confirmed the presence of the first shell layering but showed a weakened intensity signal of S (2p) and Se (3d) for the ZnSeS/ZnTe/ZnS QDs. Our work demonstrates for the first time that shell passivation of alloyed Zn-based QDs can offer improved optical properties. We hope the optical information presented in this work will be useful in the selection of alloyed Zn-based QDs appropriate for the intended application.

Shell Thickness Dependence of Interparticle Energy Transfer in Core-Shell ZnSe/ZnSe Quantum Dots Doping with Europium

NASA Astrophysics Data System (ADS)

Liu, Ni; Li, Shuxin; Wang, Caifeng; Li, Jie

2018-04-01

Low-toxic core-shell ZnSe:Eu/ZnS quantum dots (QDs) were prepared through two steps in water solution: nucleation doping and epitaxial shell grown. The structural and morphological characteristics of ZnSe/ZnS:Eu QDs with different shell thickness were explored by transmission electron microscopy (TEM) and X-ray diffraction (XRD) results. The characteristic photoluminescence (PL) intensity of Eu ions was enhanced whereas that of band-edge luminescence and defect-related luminescence of ZnSe QDs was decreased with increasing shell thickness. The transformation of PL intensity revealed an efficient energy transfer process between ZnSe and Eu. The PL intensity ratio of Eu ions ( I 613) to ZnSe QDs ( I B ) under different shell thickness was systemically analyzed by PL spectra and time-resolved PL spectra. The obtained results were in agreement with the theory analysis results by the kinetic theory of energy transfer, revealing that energy was transmitted in the form of dipole-electric dipole interaction. This particular method of adjusting luminous via changing the shell thickness can provide valuable insights towards the fundamental understanding and application of QDs in the field of optoelectronics.

Cryoprotective role of organic Zn and Cu supplementation in goats (Capra hircus) diet.

PubMed

Arangasamy, Arunachalam; Krishnaiah, Mayasula Venkata; Manohar, Narasimhaiah; Selvaraju, Sellappan; Rani, Guvvala Pushpa; Soren, Nira Manik; Reddy, Ippala Janardhan; Ravindra, Janivara Parameshwaraiah

2018-04-01

The current study focused on cryopreservation and assessment of characters of post-thaw semen of indigenous Osmanabadi bucks maintained with standard diet, supplemented with different concentrations of organic zinc (Zn), copper (Cu) or in combination, for a period of 180 days. The different doses of organic Zn and Cu were fed per kg DM basis, Zn groups (low: Zn20, medium: Zn40 and high: Zn60), Cu groups: (low: Cu12.5, medium: Cu25 and high: Cu37.5) and combination of Zn + Cu groups (low: Zn20 + Cu12.5, medium: Zn40 + Cu25 and high: Zn60 + Cu37.5) respectively. The control group bucks were maintained mainly on the basal diet without any additional mineral supplementation. Two hundred and forty (240) semen samples were collected from 40 bucks aged 11 months, through electro ejaculator method, processed and analysed for sperm quality parameters both at pre freeze and post-thaw stage. The semen samples were diluted in Tris egg yolk extender, cooled and equilibrated for 4 h at 5 °C, cryopreserved using programmable freezer (PLANER Kryo 360-1.7) and stored at -196 °C. The organic trace minerals (Zn, Cu and Zn + Cu) protected the spermatozoa against the cryoinjury and maintained higher post-thaw semen parameters except in high Zn group. Additional feeding of organic Cu and Zn to bucks had a protective role and resulted in higher sperm liveability, plasma membrane and acrosome integrities, motility and velocity and reduced oxidative stress in supplemented goats (P < 0.05). Copyright © 2018 Elsevier Inc. All rights reserved.

Cr:ZnSe planar waveguide mid-IR laser

NASA Astrophysics Data System (ADS)

Willimas, J. E.; Martyshkin, D. V.; Fedorov, V. V.; Moskalev, I. S.; Camata, R. P.; Mirov, S. B.

2011-02-01

Middle infrared (mid-IR) chromium-doped zinc selenide (Cr:ZnSe) bulk lasers have attracted a lot of attention due to their unique combination of optical and laser properties facilitating a wide range of potential scientific, industrial, and medical applications. Utilization of thin film waveguide geometry enabling good thermal management and control of beam quality is a viable pathway for compact chip-integrated optical laser design. Cr:ZnSe thin films are also promising as saturable absorbers and mode-lockers of the cavities of solid state lasers operating over 1.3-2.1 μm. We recently reported the first successful demonstration of mid-IR Cr:ZnSe planar waveguide lasing at 2.6 μm under gain-switched short-pulse (5 ns) 1.56 μm excitation as well as the passive Q-switching of the cavity of a fiber-pumped Er:YAG laser operating at 1645 nm using a highly doped Cr:ZnSe thin film. PLD grown Cr:ZnSe waveguide were fabricated on sapphire substrates (Cr:ZnSe/sapphire) with chromium concentration of 1018-1019 cm-3. Further development of mid-IR lasing in the Cr:ZnSe planar waveguide under continuous wave excitation were investigated. In addition, deposition of Cr:ZnSe-based thin film structures on n-type GaAs substrates were also investigated for possible mid-IR electroluminescence.

Chemistry of K in Cu(In,Ga)Se 2 photovoltaic absorbers: Effects of temperature on Cu-K-In-Se films

DOE PAGES

Muzzillo, Christopher P.; Tong, Ho Ming; Anderson, Tim

2017-08-05

Incorporation of K has led to world record Cu(In,Ga)Se 2 photovoltaic power conversion efficiencies, but there is poor consensus about the role of phase impurities in these advances. This work lays a foundation for identifying and controlling these phase impurities. Films of Cu-K-In-Se were co-evaporated at varied K/(K + Cu) compositions and substrate temperatures (with constant (K + Cu)/In ~ 0.85). Increased Na composition on the substrate's surface and decreased growth temperature were both found to favor Cu 1-xK xInSe 2 alloy formation, relative to two-phase CuInSe 2+KInSe 2 formation. Structures from X-ray diffraction (XRD), band gaps, resistivities, minority carriermore » lifetimes and carrier concentrations from time-resolved photoluminescence were in agreement with previous reports, where low K/(K + Cu) composition films exhibited properties promising for photovoltaic absorbers. Films grown at 400-500 °C were then annealed to 600 degrees C in a controlled Se ambient, which caused K loss by evaporation in proportion to the initial K/(K + Cu) composition. Similar to growth temperature, annealing drove Cu 1-xK xInSe 2 alloy consumption and CuInSe 2+KInSe 2 production, as evidenced by high temperature XRD. Annealing also decomposed KInSe 2 and formed K 2In 12Se 19. At high temperature, the KInSe 2 crystal lattice gradually contracted as temperature and time increased, as well as just time. Evaporative loss of K during annealing could accompany the generation of vacancies on K lattice sites, and may explain the KInSe 2 lattice contraction. As a result, this knowledge of Cu-K-In-Se material chemistry may be used to predict and control minor phase impurities in Cu(In,Ga)(Se,S) 2 photovoltaic absorbers - where impurities below typical detection limits may have played a role in recent world record photovoltaic efficiencies that utilized KF post-deposition treatments.« less

Chemistry of K in Cu(In,Ga)Se 2 photovoltaic absorbers: Effects of temperature on Cu-K-In-Se films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzzillo, Christopher P.; Tong, Ho Ming; Anderson, Tim

Incorporation of K has led to world record Cu(In,Ga)Se 2 photovoltaic power conversion efficiencies, but there is poor consensus about the role of phase impurities in these advances. This work lays a foundation for identifying and controlling these phase impurities. Films of Cu-K-In-Se were co-evaporated at varied K/(K + Cu) compositions and substrate temperatures (with constant (K + Cu)/In ~ 0.85). Increased Na composition on the substrate's surface and decreased growth temperature were both found to favor Cu 1-xK xInSe 2 alloy formation, relative to two-phase CuInSe 2+KInSe 2 formation. Structures from X-ray diffraction (XRD), band gaps, resistivities, minority carriermore » lifetimes and carrier concentrations from time-resolved photoluminescence were in agreement with previous reports, where low K/(K + Cu) composition films exhibited properties promising for photovoltaic absorbers. Films grown at 400-500 °C were then annealed to 600 degrees C in a controlled Se ambient, which caused K loss by evaporation in proportion to the initial K/(K + Cu) composition. Similar to growth temperature, annealing drove Cu 1-xK xInSe 2 alloy consumption and CuInSe 2+KInSe 2 production, as evidenced by high temperature XRD. Annealing also decomposed KInSe 2 and formed K 2In 12Se 19. At high temperature, the KInSe 2 crystal lattice gradually contracted as temperature and time increased, as well as just time. Evaporative loss of K during annealing could accompany the generation of vacancies on K lattice sites, and may explain the KInSe 2 lattice contraction. As a result, this knowledge of Cu-K-In-Se material chemistry may be used to predict and control minor phase impurities in Cu(In,Ga)(Se,S) 2 photovoltaic absorbers - where impurities below typical detection limits may have played a role in recent world record photovoltaic efficiencies that utilized KF post-deposition treatments.« less

Synthesis and characterization of ZnO/ZnSe NWs/PbS QDs solar cell

NASA Astrophysics Data System (ADS)

Kamruzzaman, M.; Zapien, J. A.

2017-04-01

The capture of solar energy has gained the attention for the next generation solar cell. ZnO/ZnSe NW arrays were synthesized on an FTO glass substrate using a simple and facile hydrothermal and ion-exchange approaches. The lead sulfide (PbS) QDs was infiltrated into ZnO/ZnSe NWs via SILAR method for making inorganic quantum dot sensitized ZnO/ZnSe/PbS QDs solar cell. The surface morphology, structural, optical, and J-V characteristics have been investigated. The ZnO/ZnSe NW is a core-shell like structure, and the absorption edge shifted from the UV region (ZnO NWs) to the near infrared region for ZnO/ZnSe NWs/PbS QDs. For PbS QDs-sensitized solar cell, the obtained value of η = 1.1%, J sc = 20.60 mA/cm2, V oc = 155 mV, and FF = 34.7%, respectively. The photovoltaic performance of the device in this study is still inferior. However, it is the first report regarding to ZnO/ZnZe NWs/PbS QDs solar cell. The achieving high absorption and large short circuit current density may interest in further improvement of the device performance by suppressing surface defects, optimizing the quality of ZnO/ZnSe NWs and PbS QDs.

Cooperative cytotoxic activity of Zn and Cu in bovine serum albumin-conjugated ZnS/CuS nano-composites in PC12 cancer cells

NASA Astrophysics Data System (ADS)

Wang, Hua-Jie; Yu, Xue-Hong; Wang, Cai-Feng; Cao, Ying

2013-11-01

Series of self-assembled and mono-dispersed bovine serum albumin (BSA)-conjugated ZnS/CuS nano-composites with different Zn/Cu ratios had been successfully synthesized by a combination method of the biomimetic synthesis and ion-exchange strategy under the gentle conditions. High-resolution transmission electron microscopy observation, Fourier transform infrared spectra and zeta potential analysis demonstrated that BSA-conjugated ZnS/CuS nano-composites with well dispersity had the hierarchical structure and BSA was a key factor to control the morphology and surface electro-negativity of final products. The real-time monitoring by atomic absorption spectroscopy and powder X-ray diffraction revealed that the Zn/Cu ratio of nano-composites could be controlled by adjusting the ion-exchange time. In addition, the metabolic and morphological assays indicated that the metabolic proliferation and spread of rat pheochromocytoma (PC12) cells could be inhibited by nano-composites, with the high anti-cancer activity at a low concentration (4 ppm). What were more important, Zn and Cu in nano-composites exhibited a positive cooperativity at inhibiting cancer cell functions. The microscope observation and biochemical marker analysis clearly revealed that the nano-composites-included lipid peroxidation and disintegration of membrane led to the death of PC12 cells. Summarily, the present study substantiated the potential of BSA-conjugated ZnS/CuS nano-composites as anti-cancer drug.

Crystal Growth of Undoped and Doped ZnSe

NASA Technical Reports Server (NTRS)

Davis, Swanson L.; Chen, K.-T.; George, M. A.; Shi, D. T.; Collins, W. E.; Burger, Arnold

1997-01-01

The surface morphology of freshly cleaved ZnSe single crystal grown by the physical vapor transport (PVT) method was investigated by Atomic Force Microscopy (AFM) and the results were correlated with Differential Scanning Calorimetry (DSC) data. Selenium precipitates have been revealed in undoped doped ZnSe crystals having a size of about 50 nm. A transition temperature around 221 C in the DSC measurements is interpreted as the eutectic temperature of Se-saturated ZnSe. The AFM images of doped ZnSe also show that possible Cr clusters are uniformly distributed and they have an estimated size of about 6 nm.

Novel red-emission of ternary ZnCdSe semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Chung, Shu-Ru; Wang, Kuan-Wen; Chen, Hong-Shuo; Chen, Hong-Hong

2015-02-01

The effect of chain lengths of fatty acids on the physical properties of CdSe and ZnCdSe semiconductor nanocrystals (NCs) synthesized by the colloidal chemistry procedure is investigated. The fatty acids, lauric acid (LA), and stearic acid (SA), with different lengths of carbon chains, are used to prepare CdSe and ZnCdSe NCs when hexyldecylamine (HDA) is applied as the sole surfactant. For CdSe-SA and ZnCdSe-SA, they have the same emission wavelength at 592 nm and the same particle size of 3.3 nm; however, their quantum yield (QY) is 75 and 16 %, respectively. In contrast, the emission wavelength of CdSe-LA and ZnCdSe-LA NCs is 609 and 615 nm, the particle size is about 3.5 and 4 nm under the same reaction time, and the QY of them are 33 and 59 %, respectively. The X-ray diffraction pattern shows that ZnCdSe NCs all have the wurtzite structure, and their main peaks are located between those of pure CdSe and ZnSe materials. The main phase of ZnCdSe-SA and ZnCdSe-LA is ZnSe and CdSe, respectively, implying that alloyed ZnCdSe NC can be prepared and ZnSe and CdSe phase can be promoted by SA and LA, respectively. Moreover, the QY of red-emission ZnCdSe-LA is higher than 50 %. These results suggest that the growth rate of CdSe as well as ZnCdSe NC can be enhanced by using LA as complex reagent and HDA as sole surfactant. It is expected that the reported effective synthetic strategy can be developed as a very practical, easy and not time-consuming approach to prepare red emissive NCs with high QY and high reproducibility.

Wide emission-tunable CdTeSe/ZnSe/ZnS core–shell quantum dots and their conjugation with E. coli O-157

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Haifeng; Zhou, Guangjun, E-mail: gjzhou@sdu.edu.cn; Zhou, Juan

2015-05-15

Highlights: • QDs with variety morphology were obtained via an injection controlled process. • 3-D PL spectra of core–shell QDs show different excitation wavelength dependence. • The PL intensity of QDs with ZnSe transition layer increases dramatically. • Core–shell QDs were processed into aqueous phase and conjugated with E. coli O-157. - Abstract: Wide emission-tunable and different morphological alloyed CdTeSe quantum dots (QDs), CdTeSe/ZnS and CdTeSe/ZnSe/ZnS core–shell QDs were successfully synthesized via an injection controlled process. The effect of injection procedure and reaction temperature were systematically discussed and the growth mechanism was proposed. Most efficient PL wavelength was correlated withmore » reaction time and temperature. The 3-D PL spectra of spherical bare CdTeSe and core–shell QDs with different passivation showed different excitation wavelength dependency. The PL intensity of CdTeSe/ZnSe/ZnS core–shell QDs increased greatly in comparison with that of CdTeSe and CdTeSe/ZnSe QDs. ZnSe transition layer played an important role in improving the PL intensity by providing a smoothened interface and gradient band offsets. The core–shell QDs were transferred into aqueous phase and successfully conjugated with Escherichia coli O-157. The proposed phase-transfer and bio-labeling strategy may be applicable to various QDs with different compositions.« less

InP/ZnSe/ZnS core-multishell quantum dots for improved luminescence efficiency

NASA Astrophysics Data System (ADS)

Greco, Tonino; Ippen, Christian; Wedel, Armin

2012-04-01

Semiconductor quantum dots (QDs) exhibit unique optical properties like size-tunable emission color, narrow emission peak, and high luminescence efficiency. QDs are therefore investigated towards their application in light-emitting devices (QLEDs), solar cells, and for bio-imaging purposes. In most cases QDs made from cadmium compounds like CdS, CdSe or CdTe are studied because of their facile and reliable synthesis. However, due to the toxicity of Cd compounds and the corresponding regulation (e.g. RoHS directive in Europe) these materials are not feasible for customer applications. Indium phosphide is considered to be the most promising alternative because of the similar band gap (InP 1.35 eV, CdSe 1.73 eV). InP QDs do not yet reach the quality of CdSe QDs, especially in terms of photoluminescence quantum yield and peak width. Typically, QDs are coated with another semiconductor material of wider band gap, often ZnS, to passivate surface defects and thus improve luminescence efficiency. Concerning CdSe QDs, multishell coatings like CdSe/CdS/ZnS or CdSe/ZnSe/ZnS have been shown to be advantageous due to the improved compatibility of lattice constants. Here we present a method to improve the luminescence efficiency of InP QDs by coating a ZnSe/ZnS multishell instead of a ZnS single shell. ZnSe exhibits an intermediate lattice constant of 5.67 Å between those of InP (5.87 Å) and ZnS (5.41 Å) and thus acts as a wetting layer. As a result, InP/ZnSe/ZnS is introduced as a new core-shell quantum dot material which shows improved photoluminescence quantum yield (up to 75 %) compared to the conventional InP/ZnS system.

Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots

NASA Astrophysics Data System (ADS)

Dong, Xiaofei; Xu, Jianping; Yang, Hui; Zhang, Xiaosong; Mo, Zhaojun; Shi, Shaobo; Li, Lan; Yin, Shougen

2018-04-01

The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV-Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.

Outstanding features of Cu-doped ZnS nanoclusters

NASA Astrophysics Data System (ADS)

Tawfik, Wael Z.; Farghali, A. A.; Moneim, Ahmed; Imam, N. G.; El-Dek, S. I.

2018-05-01

ZnS and their Cu-doped nanoclusters (NCs) were synthesized successfully using the wet chemical route with different Cu content. The crystalline structure was investigated using x-ray powder diffraction which assured the single-phase formation in cubic symmetry. High-resolution transmission electron microscope indicated the microstructure of NCs with a size ranging from 2–4 nm. A butterfly hysteresis (M-H) loop was observed at room temperature with large values of coercivity for the Cu content of x = 0.05. Photoluminescence emission spectra were recorded from 500–615 nm for pure and Cu-doped ZnS NCs at a 350 nm excitation wavelength. The sample exhibited green fluorescence bands peaking at 535, 544, 552.5, 558.2, and 560.6 nm, which confirmed the characteristic feature of Zn2+ as luminescent centers in the lattice. The additional yellow and orange emissions are due to defect levels or/and impurity centers. The dielectric constant as well as the conductivity values increased with increasing Cu content.

Structural and electronic properties of CdSe/ZnS and ZnS/CdSe core/shell nanowires via first principles study

NASA Astrophysics Data System (ADS)

Rehman, Shafiq Ur; Li, H. M.; Ding, Z. J.

2018-05-01

First principles calculations have been performed to predict the structural stability and electronic structures of hydrogen passivated wurtzite CdSe/ZnS and ZnS/CdSe core/shell nanowires (CSNWs) in the [0001] direction. The calculated binding energy shows that ZnS/CdSe CSNWs are more stable than CdSe/ZnS CSNWs and the stability of ZnS/CdSe CSNWs increases with increasing the thickness of ZnS shell. The modulated electronic band gap demonstrates an increase when the size of both CSNWs is reduced, as a result of the quantum confinement effect. The core-to-shell chemical composition of atoms shows that a strong composition effect also exists in these CSNWs, which in turn affects their electronic properties. Our simulated results show that the photoemission spectra of the CSNWs can be significantly improved by tuning the energy gap of CSNWs.

Attempting to realize n-type BiCuSeO

NASA Astrophysics Data System (ADS)

Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong

2018-02-01

As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 μVK-1 for undoped BiCuSeO to +638 μVK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach ∼ -465 μVK-1 and -543 μVK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

Evidence for Cu2-xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Simsek Sanli, E.; Ramasse, Q. M.; Mainz, R.; Weber, A.; Abou-Ras, D.; Sigle, W.; van Aken, P. A.

2017-07-01

Cu(In,Ga)Se2 (CIGS)-based solar cells reach high power-conversion efficiencies of above 22%. In this work, a three-stage co-evaporation method was used for their fabrication. During the growth stages, the stoichiometry of the absorbers changes from Cu-poor ([Cu]/([In] + [Ga]) < 1) to Cu-rich ([Cu]/([In] + [Ga]) > 1) and finally becomes Cu-poor again when the growth process is completed. It is known that, according to the Cu-In-Ga-Se phase diagram, a Cu-rich growth leads to the presence of Cu2-xSe (x = 0-0.25), which is assumed to assist in recrystallization, grain growth, and defect annihilation in the CIGS layer. So far, Cu2-xSe precipitates with spatial extensions on the order of 10-100 nm have been detected only in Cu-rich CIGS layers. In the present work, we report Cu2-xSe platelets with widths of only a few atomic planes at grain boundaries and as inclusions within grains in a polycrystalline, Cu-poor CIGS layer, as evidenced by high-resolution scanning transmission electron microscopy (STEM). The chemistry of the Cu-Se secondary phase was analyzed by electron energy-loss spectroscopy, and STEM image simulation confirmed the identification of the detected phase. These results represent additional experimental evidence for the proposed topotactical growth model for Cu-Se-assisted CIGS thin-film formation under Cu-rich conditions.

Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

NASA Astrophysics Data System (ADS)

Yang, Y. C.; Pan, F.; Zeng, F.; Liu, M.

2009-12-01

ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher Roff/Ron ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.

Facile synthesis of Cu/tetrapod-like ZnO whisker compounds with enhanced photocatalytic properties

NASA Astrophysics Data System (ADS)

Liu, Hong; Liu, Huarong; Fan, Ximei

2017-09-01

Cu/tetrapod-like ZnO whisker (T-ZnOw) compounds were successfully synthesized using N2H4 \\cdot H2O as a reducing agent by a simple reduction method without any insert gas at room temperature. The crystal phase composition and morphology of the as-prepared samples were investigated by XRD, SEM and FESEM tests. The photocatalytic property of the as-prepared samples was detected by the degradation of methyl orange (MO) aqueous solution under UV irradiation. It can be found that Cu nanoparticles (CuNPs) dispersed on the surface of T-ZnOw increased with the increasing of Cu/Zn molar ratios (Cu/Zn MRs), and an octahedral structure of CuNPs was obtained when the sample was prepared with less than and equal to 7.30% Cu/Zn MR, but tended to a spherical or nanorod structure of CuNPs densely arranged on the surface of T-ZnOw, which is prepared by Cu/Zn MRs up to 22.00%. All the compounds exhibited excellent photocatalytic activity in decomposing of MO than T-ZnOw, the photocatalytic property of the samples increased with the increasing of Cu/Zn MRs up to 7.30%, while it decreases when further increasing the Cu/Zn MRs. The Schottky barrier of the Cu/T-ZnOw compound can effectively capture photoinduced electrons from the interface and enhanced the photocatalytic property of T-ZnOw.

Thermochemistry of paddle wheel MOFs: Cu-HKUST-1 and Zn-HKUST-1.

PubMed

Bhunia, Manas K; Hughes, James T; Fettinger, James C; Navrotsky, Alexandra

2013-06-25

Metal-organic framework (MOF) porosity relies upon robust metal-organic bonds to retain structural rigidity upon solvent removal. Both the as-synthesized and activated Cu and Zn polymorphs of HKUST-1 were studied by room temperature acid solution calorimetry. Their enthalpies of formation from dense assemblages (metal oxide (ZnO or CuO), trimesic acid (TMA), and N,N-dimethylformamide (DMF)) were calculated from the calorimetric data. The enthalpy of formation (ΔHf) of the as-synthesized Cu-HKUST-H2O ([Cu3TMA2·3H2O]·5DMF) is -52.70 ± 0.34 kJ per mole of Cu. The ΔHf for Zn-HKUST-DMF ([Zn3TMA2·3DMF]·2DMF) is -54.22 ± 0.57 kJ per mole of Zn. The desolvated Cu-HKUST-dg [Cu3TMA2] has a ΔHf of 16.66 ± 0.51 kJ/mol per mole Cu. The ΔHf for Zn-HKUST-amorph [Zn3TMA2·2DMF] is -3.57 ± 0.21 kJ per mole of Zn. Solvent stabilizes the Cu-HKUST-H2O by -69.4 kJ per mole of Cu and Zn-HKUST-DMF by at least -50.7 kJ per mole of Zn. Such strong chemisorption of solvent is similar in magnitude to the strongly exothermic binding at low coverage for chemisorbed H2O on transition metal oxide nanoparticle surfaces. The strongly exothermic solvent-framework interaction suggests that solvent can play a critical role in obtaining a specific secondary building unit (SBU) topology.

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing.

PubMed

Wi, Jae-Hyung; Kim, Tae Gun; Kim, Jeong Won; Lee, Woo-Jung; Cho, Dae-Hyung; Han, Won Seok; Chung, Yong-Duck

2015-08-12

We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

Rapid direct conversion of Cu2-xSe to CuAgSe nanoplatelets via ion exchange reactions at room temperature

NASA Astrophysics Data System (ADS)

Moroz, N. A.; Olvera, A.; Willis, G. M.; Poudeu, P. F. P.

2015-05-01

The use of template nanostructures for the creation of photovoltaic and thermoelectric semiconductors is becoming a quickly expanding synthesis strategy. In this work we report a simple two-step process enabling the formation of ternary CuAgSe nanoplatelets with a great degree of control over the composition and shape. Starting with hexagonal nanoplatelets of cubic Cu2-xSe, ternary CuAgSe nanoplatelets were generated through a rapid ion exchange reaction at 300 K using AgNO3 solution. The Cu2-xSe nanoplatelet template and the final CuAgSe nanoplatelets were analyzed by electron microscopy and X-ray diffraction (XRD). It was found that both the low temperature pseudotetragonal and the high temperature cubic forms of CuAgSe phase were created while maintaining the morphology of the Cu2-xSe nanoplatelet template. Thermal and electronic transport measurements of hot-pressed pellets of the synthesized CuAgSe nanoplatelets showed a drastic reduction in the thermal conductivity and a sharp transition from n-type (S = -45 μV K-1) to p-type (S = +200 μV K-1) semiconducting behavior upon heating above the structural transition from the low temperature orthorhombic to the high temperature super-ionic cubic phase. This simple reaction process utilizing a template nanostructure matrix represents an energy efficient, cost-efficient, and versatile strategy to create interesting materials with lower defect density and superior thermoelectric performance.The use of template nanostructures for the creation of photovoltaic and thermoelectric semiconductors is becoming a quickly expanding synthesis strategy. In this work we report a simple two-step process enabling the formation of ternary CuAgSe nanoplatelets with a great degree of control over the composition and shape. Starting with hexagonal nanoplatelets of cubic Cu2-xSe, ternary CuAgSe nanoplatelets were generated through a rapid ion exchange reaction at 300 K using AgNO3 solution. The Cu2-xSe nanoplatelet template and the

Antibacterial activity of trimetal (CuZnFe) oxide nanoparticles.

PubMed

Alzahrani, Khalid E; Niazy, Abdurahman A; Alswieleh, Abdullah M; Wahab, Rizwan; El-Toni, Ahmed M; Alghamdi, Hamdan S

2018-01-01

The increasing resistance of pathogenic bacteria to antibiotics is a challenging worldwide health problem that has led to the search for new and more efficient antibacterial agents. Nanotechnology has proven to be an effective tool for the fight against bacteria. In this paper, we present the synthesis and traits of trimetal (CuZnFe) oxide nanoparticles (NPs) using X-ray diffraction, high-resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. We evaluated the antibacterial activity of these NPs against gram-negative Escherichia coli and gram-positive Enterococcus faecalis and then compared it to that of their pure single-metal oxide components CuO and ZnO. Our study showed that the antibacterial activity of the trimetal oxide NPs was greater against E . coli than against E . faecalis . Overall, the antimicrobial effect of trimetal NPs is between those of pure ZnO and CuO nanoparticles, which may mean that their cytotoxicity is also between that of pure ZnO and CuO NPs, making them potential antibiotics. However, the cytotoxicity of trimetal NPs to mammalian cells needs to be verified. The combination of three metal oxide NPs (ZnO, CuO, and Fe 2 O 3 ) in one multimetal (CuZnFe) oxide NPs will enhance the therapeutic strategy against a wide range of microbial infections. Bacteria are unlikely to develop resistance against this new NP because bacteria must go through a series of mutations to become resistant to the trimetal oxide NP. Therefore, this NP can combat existing and emerging bacterial infections.

Ecosystems supporting clusters of sporadic TSEs demonstrate excesses of the radical-generating divalent cation manganese and deficiencies of antioxidant co factors Cu, Se, Fe, Zn. Does a foreign cation substitution at prion protein's Cu domain initiate TSE?

PubMed

Purdey, M

2000-02-01

Analyses of food chains supporting isolated clusters of sporadic TSEs (CWD in N Colorado, scrapie in Iceland, CJD in Slovakia) demonstrate a consistent 2 1/2+ fold greater concentration of the pro-oxidant divalent cation, manganese (Mn), in relation to normal levels recorded in adjoining TSE-free localities. Deficiencies of the antioxidant co factors Cu/Se/Zn/Fe and Mg, P and Na were also consistently recorded in TSE foodchains. Similarities between the clinical/pathological profile of TSEs and Mn delayed psycho-neurotoxicity in miners are cited, and a novel theory generated which suggests that sporadic TSE results from early life dependence of TSE susceptible genotypes on ecosystems characterised by this specific pattern of mineral imbalance. Low Cu/Fe induces an excessive absorption of Mn in ruminants and an increased oxidation of Mn2+ into its pro oxidant species, Mn3+, which accumulates in mitochondria of CNS astrocytes in Mn SOD deficient genotypes. Deficiencies of scavenger co factors Cu/Zn/Se/Fe in the CNS permits Mn3+ initiated chain reactions of auto-oxidant mediated neuronal degeneration to proliferate, which, in turn, up-regulates the expression of the Cu-metalloprotein, prion protein (PrP). Once the rate of PrP turnover and its demand for Cu exceeds the already depleted supply of Cu within the CNS, PrP can no longer bind sufficient Cu to maintain its conformation. Mn3+ substitutes at the vacated Cu domain on PrP, thus priming up a latent capacity for lethal auto-oxidative activity to be carried along with PrP like a 'trojan horse'; where Mn 3+ serves as the integral 'infectious' transmissible component of the misfolded PrP-cation complex. The Mn overactivation of concanavalin A binding to glycoprotein and Mn-initiated autoxidation results in a diverse pathological profile involving receptor capping, aggregation/modification of CNS membrane/cytoskeletal proteins. TSE ensues. The BSE/nv CJD strain entails a 'synthetic' induction of the same CNS mineral

10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets

NASA Astrophysics Data System (ADS)

Peng, Xiao; Zhao, Ming; Zhuang, Daming; Sun, Rujun; Zhang, Leng; Wei, Yaowei; Lv, Xunyan; Wu, Yixuan; Ren, Guoan

2018-06-01

We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron-thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%.

Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

NASA Astrophysics Data System (ADS)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 < Δχ < 0.7, depends on bandgap. Our simulations examine various electron reflector layer materials and conclude the most suitable electron reflector layer for this real CIGS solar cells. ZnSnP2, CdSiAs2, GaAs, CdTe, Cu2ZnSnS4, InP, CuO, Pb10Ag3Sb11S28, CuIn5S8, SnS, PbCuSbS3, Cu3AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

Fast photocatalytic degradation of sulforhodamine B using ZnO:Cu nanorods

NASA Astrophysics Data System (ADS)

Raji, R.; Gopchandran, K. G.

2018-02-01

In this work, ZnO:Cu nanorods with tunable Cu content were successfully synthesized via co-precipitation method and investigations were made on the use of these nanorods as photocatalyst by observing the photodegradation of a representative dye pollutant of sulforhodamine B (SRB) under sunlight. The X-ray diffraction analysis and high resolution transmission electron microscopy showed that ZnO:Cu nanorods possess wurtzite phase with preferential growth along (101) plane. The formation of additional defect levels in these nanorods on doping with Cu and its dependence on the concentration of Cu were studied using photoluminescence and X-ray photoelectron spectroscopy. ZnO:Cu nanorods results in faster degradation of dye as compared to the undoped ZnO and is found that Cu doping enhances the photodegradation activity significantly and is highly sensitive to Cu doping level. The fast photocatalytic degradation is attributed to the fact that Cu ions promote the interfacial charge transfer and favors the effective charge separation of photogenerated electrons and holes generated during sunlight irradiation, increasing the rate of production of reactive oxygen species needed for the degradation of the dye. The chemical oxygen demand analysis of the dye solution after sunlight irradiation indicates that rate of mineralization is slower than the decoloration. The possible mechanism for degradation of dye under sunlight irradiation is described with a schematic. Additionally, the photostability of the ZnO:Cu nanorods was also tested through three repetitive cycles. This work suggest that the prepared ZnO:Cu nanorods are suitable for cost-effective water purification.

The effect of Ti-B on stabilization of Cu-Zn-Al martensite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stipcich, M.; Romero, R.

1998-10-05

The application of shape memory effect in devices requires, in many cases, stable and reliable transformation temperatures. However, as a consequence of diffusional processes, in Cu-based shape memory alloys, reverse transformation temperature significantly rises after aging at temperatures above room temperature. This generally unwanted behavior is usually referred to as the stabilization of martensite. Numerous investigations have been carried out on this subject as reviewed by Ahlers and Chandrasekaran et al. Within the Cu-based alloys the Cu-Zn-Al are claimed to be more prone to stabilization than Cu-Al-Ni on aging. It has been proposed that in the Cu-Zn-Al the stabilization ismore » due to the interchange of Cu and Zn atoms assisted by vacancies, changing, consequently, the long range order inherited from the {beta} phase. In the present work, the authors investigate the stabilization behavior of polycrystalline samples of stress induced Cu-Zn-Al and Cu-Zn-Al-B martensite.« less

Preparation of high-permeability NiCuZn ferrite.

PubMed

Hu, Jun; Yan, Mi

2005-06-01

Appropriate addition of CuO/V2O5 and the reduction of the granularity of the raw materials particle decrease the sintering temperature of NiZn ferrite from 1200 degrees C to 930 degrees C. Furthermore, the magnetic properties of the NiZn ferrite prepared at low temperature of 930 degrees C is superior to that of the NiZn ferrite prepared by sintering at high temperature of 1200 degrees C because the microstructure of the NiZn ferrite sintered at 930 degrees C is more uniform and compact than that of the NiZn ferrite sintered at 1200 degrees C. The high permeability of 1700 and relative loss coefficient tandelta/mu(i) of 9.0x10(-6) at 100 kHz was achieved in the (Ni0.17Zn0.63Cu0.20)Fe1.915O4 ferrite.

(Zn,H)-codoped copper oxide nanoparticles via pulsed laser ablation on Cu-Zn alloy in water

PubMed Central

2012-01-01

Nanosized (5 to 10 nm) amorphous and crystalline nanocondensates, i.e., metallic α-phase of Zn-Cu alloy in face-centered cubic structure and (Zn,H)-codoped cuprite (Cu2O) with high-pressure-favored close-packed sublattice, were formed by pulsed laser ablation on bulk Cu65Zn35 in water and characterized by X-ray/electron diffractions and optical spectroscopy. The as-fabricated hybrid nanocondensates are darkish and showed photoluminescence in the whole visible region. Further dwelling of such nanocondensates in water caused progressive formation of a rice-like assembly of (Zn,H)-codoped tenorite (CuO) nanoparticles with (001), (100), and {111} preferred orientations, (111) tilt boundary, yellowish color, and minimum bandgap narrowing down to ca. 2.7 eV for potential photocatalytic applications. PMID:22647312

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O

NASA Astrophysics Data System (ADS)

Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V.; Pillai, Vijayamohanan K.

2014-07-01

Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar

Comparison of Cu2+ and Zn2+ thermalcatalyst in treating diazo dye

NASA Astrophysics Data System (ADS)

Lau, Y. Y.; Wong, Y. S.; Ong, S. A.; Lutpi, N. A.; Ho, L. N.

2018-05-01

This research demonstrates the comparison between copper (II) sulphate (CuSO4) and zinc oxide (ZnO) as thermalcatalysts in thermolysis process for the treatment of diazo reactive black 5 (RB 5) wastewater. CuSO4 was found to be the most effective thermalcatalyst in comparison to ZnO. The color removal efficiency of RB 5 catalysed by CuSO4 and ZnO were 91.55 % at pH 9.5 and 7.36 % at pH 2, respectively. From the UV-Vis wavelength scan, CuSO4 catalyst is able to cleave the molecular structure bonding more efficiently compared to ZnO. ZnO which only show a slight decay on the main chemical network strands: azo bond, naphthalene and benzene rings whereas CuSO4 catalyst is able to fragment azo bond and naphthalene more effectively. The degradation reactions of CuSO4 and ZnO as thermalcatalysts in thermolysis process were compared.

Preparation and Enhanced Thermoelectric Performance of Cu2Se-SnSe Composite Materials

NASA Astrophysics Data System (ADS)

Peng, Zhi; He, Danqi; Mu, Xin; Zhou, Hongyu; Li, Cuncheng; Ma, Shifang; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-03-01

A series of p-type xCu2Se-SnSe (x = 0%, 0.10%, 0.15%, 0.20%, and 0.25%) composite thermoelectric materials have been prepared by the combination of ultrasonic dispersion and spark plasma sintering methods. The effects of secondary phase Cu2Se on the phase composition, microstructure, and thermoelectric properties of the composites were investigated. Microstructure characterization and elemental maps indicated Cu2Se grains uniformly distributed on the boundaries of the matrix. Transport measurements demonstrated that enhancement of the power factor and reduction of the thermal conductivity can be realized simultaneously by optimizing the adding content of Cu2Se. The highest ZT value of 0.51 at 773 K was achieved for the sample with x = 0.15%, increased by 24% compared with that of the SnSe matrix. These results demonstrate that optimizing the Cu2Se content can improve the thermoelectric performance of p-type SnSe polycrystalline materials.

Preparation and Enhanced Thermoelectric Performance of Cu2Se-SnSe Composite Materials

NASA Astrophysics Data System (ADS)

Peng, Zhi; He, Danqi; Mu, Xin; Zhou, Hongyu; Li, Cuncheng; Ma, Shifang; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-06-01

A series of p-type xCu2Se-SnSe ( x = 0%, 0.10%, 0.15%, 0.20%, and 0.25%) composite thermoelectric materials have been prepared by the combination of ultrasonic dispersion and spark plasma sintering methods. The effects of secondary phase Cu2Se on the phase composition, microstructure, and thermoelectric properties of the composites were investigated. Microstructure characterization and elemental maps indicated Cu2Se grains uniformly distributed on the boundaries of the matrix. Transport measurements demonstrated that enhancement of the power factor and reduction of the thermal conductivity can be realized simultaneously by optimizing the adding content of Cu2Se. The highest ZT value of 0.51 at 773 K was achieved for the sample with x = 0.15%, increased by 24% compared with that of the SnSe matrix. These results demonstrate that optimizing the Cu2Se content can improve the thermoelectric performance of p-type SnSe polycrystalline materials.

Modification of back electrode with WO3 layer and its effect on Cu2ZnSn(S,Se)4-based solar cells

NASA Astrophysics Data System (ADS)

Shi, Kun; Yao, Bin; Li, Yongfeng; Ding, Zhanhui; Deng, Rui; Sui, Yingrui; Zhang, Zhenzhong; Zhao, Haifeng; Zhang, Ligong

2018-01-01

In the present work, we designed and prepared Cu2ZnSn(S,Se)4 (CZTSSe)-based solar cells with a new structure of Al/ITO/ZnO/CdS/CZTSSe/WO3/Mo/SLG (S1-5) by depositing about 5-nm-thick WO3 layer with monoclinic structure on the back electrode Mo/SLG of solar cells with the convention structure of Al/ITO/ZnO/CdS/CZTSSe/Mo/SLG (S2), with the aim of improving the power conversion efficiency (PCE) of CZTSSe-based solar cells. It is found that the average open circuit voltage (Voc) increases from 346.7 mV of the S2 cells to 400.9 mV of the S1-5 cells, the average short circuit current density (Jsc) from 26.4 mA/cm2 to 32.1 mA/cm2 and the filling factor (FF) from 33.8 to 40.0 by addition of the WO3 layer, which results in that the average PCE increases from 3.10% of the S2 cells to 5.14% of the S1-5 cells. The average increasing percent of the PCE is 65.8%. The increase in Voc, Jsc and FF of the S1-5 cells compared to the S2 cells is attributed to that the WO3 layer prevent the Se coming from Se ambient and CZTSSe to react with the Mo to form MoSe2 and other second phases, which makes the shunt resistance (Rsh) of the S1-5 increase and the series resistance (Rs) and reverse saturation current density (J0) decrease compared to the S2 cells. The decreased J0 is main factor of improvement of the PCE. A mechanism of influence of the Rsh, Rs and J0 on the PCE is also revealed. Our result demonstrates that addition of the WO3 layer with a reasonable thickness can be a promising technical route of improving the PCE of the CZTSSe-based solar cell.

Tracing contamination sources in soils with Cu and Zn isotopic ratios.

PubMed

Fekiacova, Z; Cornu, S; Pichat, S

2015-06-01

Copper (Cu) and zinc (Zn) are naturally present and ubiquitous in soils and are important micronutrients. Human activities contribute to the input of these metals to soils in different chemical forms, which can sometimes reach a toxic level for soil organisms and plants. Isotopic signatures could be used to trace sources of anthropogenic Cu and Zn pollution. The aim of this paper is to determine whether it is possible to identify (i) Cu and Zn contamination in soils and their sources, on the basis of their isotopic signatures, and (ii) situations that are a priori favorable or not for tracing Cu and Zn pollution using the isotopic approach. Therefore, we compiled data from the literature on Cu and Zn isotopes in soils, rocks and pollutants and added to this database the results of our own research. As only a few studies have dealt with agricultural contamination, we also studied a soil toposequence from Brittany, France, that experienced spreading of pig slurry for tens of years. In the surface horizons of the natural soils, the δ(65)Cu values vary from -0.15 to 0.44‰ and the δ(66)Zn from -0.03 to 0.43‰. Furthermore, vertical variations along soil profiles range from -0.95 to 0.44‰ for δ(65)Cu and from -0.53 to 0.64‰ for δ(66)Zn values. We concluded that pedogenetic processes can produce isotopic fractionation, yet, it is not always discernible and can be overprinted by an exogenous isotopic signature. Furthermore, some contaminants are enriched in heavy Cu or in light Zn compared to the rock or soil, but no generalization can be made. The anthropogenic inputs can be identified based on stable Cu and Zn isotope ratios if the isotope ratios of the sources are different from those of the soil, which needs to be tested for each individual case. Copyright © 2015 Elsevier B.V. All rights reserved.

Rapid direct conversion of Cu(2-x)Se to CuAgSe nanoplatelets via ion exchange reactions at room temperature.

PubMed

Moroz, N A; Olvera, A; Willis, G M; Poudeu, P F P

2015-06-07

The use of template nanostructures for the creation of photovoltaic and thermoelectric semiconductors is becoming a quickly expanding synthesis strategy. In this work we report a simple two-step process enabling the formation of ternary CuAgSe nanoplatelets with a great degree of control over the composition and shape. Starting with hexagonal nanoplatelets of cubic Cu2-xSe, ternary CuAgSe nanoplatelets were generated through a rapid ion exchange reaction at 300 K using AgNO3 solution. The Cu2-xSe nanoplatelet template and the final CuAgSe nanoplatelets were analyzed by electron microscopy and X-ray diffraction (XRD). It was found that both the low temperature pseudotetragonal and the high temperature cubic forms of CuAgSe phase were created while maintaining the morphology of the Cu2-xSe nanoplatelet template. Thermal and electronic transport measurements of hot-pressed pellets of the synthesized CuAgSe nanoplatelets showed a drastic reduction in the thermal conductivity and a sharp transition from n-type (S = -45 μV K(-1)) to p-type (S = +200 μV K(-1)) semiconducting behavior upon heating above the structural transition from the low temperature orthorhombic to the high temperature super-ionic cubic phase. This simple reaction process utilizing a template nanostructure matrix represents an energy efficient, cost-efficient, and versatile strategy to create interesting materials with lower defect density and superior thermoelectric performance.

Preparation of high-permeability NiCuZn ferrite*

PubMed Central

Hu, Jun; Yan, Mi

2005-01-01

Appropriate addition of CuO/V2O5 and the reduction of the granularity of the raw materials particle decrease the sintering temperature of NiZn ferrite from 1200 °C to 930 °C. Furthermore, the magnetic properties of the NiZn ferrite prepared at low temperature of 930 °C is superior to that of the NiZn ferrite prepared by sintering at high temperature of 1200 °C because the microstructure of the NiZn ferrite sintered at 930 °C is more uniform and compact than that of the NiZn ferrite sintered at 1200 °C. The high permeability of 1700 and relative loss coefficient tanδ/μi of 9.0×10−6 at 100 kHz was achieved in the (Ni0.17Zn0.63Cu0.20)Fe1.915O4 ferrite. PMID:15909348

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE PAGES

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

2017-01-30

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate

Controlling metastable native point-defect populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 materials and solar cells through voltage-bias annealing

NASA Astrophysics Data System (ADS)

Teeter, G.; Harvey, S. P.; Johnston, S.

2017-01-01

This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 °C to 215 °C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 °C for CIGS and 110 °C-215 °C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate

The effect of Cu/Zn molar ratio on CO{sub 2} hydrogenation over Cu/ZnO/ZrO{sub 2}/Al{sub 2}O{sub 3} catalyst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaharun, Salina, E-mail: salinashaharun@gmail.com, E-mail: maizats@petronas.com.my; Shaharun, Maizatul S., E-mail: salinashaharun@gmail.com, E-mail: maizats@petronas.com.my; Taha, Mohd F., E-mail: faisalt@petronas.com.my

2014-10-24

Catalytic hydrogenation of carbon dioxide (CO{sub 2}) to methanol is an attractive way to recycle and utilize CO{sub 2}. A series of Cu/ZnO/Al{sub 2}O{sub 3}/ZrO{sub 2} catalysts (CZAZ) containing different molar ratios of Cu/Zn were prepared by the co-precipitation method and investigated in a stirred slurry autoclave system. The catalysts were characterized by temperature-programmed reduction (TPR), field emission scanning electron microscopy-energy dispersive analysis (FESEM-EDX), X-ray diffraction (XRD) and N{sub 2} adsorption-desorption. Higher surface area, SA{sub BET} values (42.6–59.9 m{sup 2}/g) are recorded at low (1) and high (5) Cu/Zn ratios with the minimum value of 35.71 m{sup 2}/g found formore » a Cu/Zn of 3. The reducibility of the metal oxides formed after calcination of catalyst samples was also affected due to change in metal-support interaction. At a low reaction temperature of 443 K, total gas pressure of 3.0 MPa and 0.1 g/mL of the CZAZ catalyst, the selectivity to methanol decreased as the Cu/Zn molar ratio increased, and the maximum selectivity of 67.73 was achieved at Cu/Zn molar ratio of 1. With a reaction time of 3h, the best performing catalyst was CZAZ75 with Cu/Zn molar ratio of 5 giving methanol yield of 79.30%.« less

Pressure-Photoluminescence Study of the Zn Vacancy and Donor Zn-Vacancy Complexes in ZnSe

NASA Astrophysics Data System (ADS)

Iota, V.; Weinstein, B. A.

1997-03-01

We report photoluminescence (PL) results to 65kbar (at 8K) on n-type electron irradiated ZnSe containing high densities of isolated Zn vacancies (V_Zn) and donor-V_Zn complexes (A-centers).^1 Isotropic pressure is applied using a diamond-anvil cell with He medium, and laser excitations above and below the ZnSe bandgap (2.82eV) are employed. The 1 atm. spectra exhibit excitonic lines, shallow donor-acceptor pair (DAP) peaks, and two broad bands due to DAP transitions between shallow donors and deep acceptor states at A-centers (2.07eV) or V_Zn (1.72eV). At all pressures, these broad bands are prominent only for sub-gap excitation, which results in: i) A-center PL at energies above the laser line, and ii) strong enhancement of the first LO-replica in the shallow DAP series compared to 3.41eV UV excitation. This suggests that sub-gap excitation produces long-lived metastable acceptor states. The broad PL bands shift to higher energy with pressure faster than the ZnSe direct gap, indicating that compression causes the A-center and V_Zn deep acceptor levels to approach the hole continuum. This behavior is similar to that found by our group for P and As deep acceptor levels in ZnSe, supporting the view that deep substitutional defects often resemble the limiting case of a vacancy. ^1D. Y. Jeon, H. P. Gislason, G. D. Watkins Phys. Rev. B 48, 7872 (1993); we thank G. D. Watkins for providing the samples. (figures)

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se{sub 2} solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Du, H. W.; Li, Y.

2016-08-15

The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se{sub 2} thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely V{sub Se}, In{sub Cu} and (In{sub Cu}+V{sub Cu}), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of E{sub C}-0.08, E{sub C}-0.20 and E{sub C}-0.25 eV, respectively. The In{sub Cu} and (In{sub Cu}+V{sub Cu}) deep level defects are non-radiative recombination centers at room temperature.more » The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se{sub 2} layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (In{sub Cu}+V{sub Cu}) and V{sub se} defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se{sub 2} conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.« less

Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

NASA Astrophysics Data System (ADS)

Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

2011-08-01

This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

NASA Astrophysics Data System (ADS)

Finke, A.; Ruth, M.; Scholz, S.; Ludwig, A.; Wieck, A. D.; Reuter, D.; Pawlis, A.

2015-01-01

We demonstrate efficient room-temperature photoluminescence and spectral tuning of epitaxially grown ZnSe/CdSe quantum well structures almost over the whole visible spectrum (470-600 nm wavelength). The key element to achieve the observed high quantum efficiency and enormous tuning range was the implementation of a special strain engineering technique, which allows us to suppress substantial lattice relaxation of CdSe on ZnSe. Previous studies indicated that a CdSe coverage exceeding 3 ML on ZnSe results in the formation of extensive lattice defects and complete quenching of the photoluminescence at low and room temperature. In contrast, our approach of strain engineering enables the deposition of planar CdSe quantum wells with a thickness ranging from 1 to 6 ML with excellent optical properties. We attribute the observed experimental features to a controllable strain compensation effect that is present in an alternating system of tensile and compressively strained epitaxial layers and supported this model by calculations of the transition energies of the ZnSe/CdSe quantum wells.

Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

NASA Astrophysics Data System (ADS)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

2014-12-01

We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

Electron-beam pumped laser structures based on MBE grown {ZnCdSe}/{ZnSe} superlattices

NASA Astrophysics Data System (ADS)

Kozlovsky, V. I.; Shcherbakov, E. A.; Dianov, E. M.; Krysa, A. B.; Nasibov, A. S.; Trubenko, P. A.

1996-02-01

Cathodoluminescence (CL), photoreflection (PR), phototransmission (PT) of single and multiquantum wells (MQWs) and strain layer {ZnCdSe}/{ZnSe} superlattices (SLs) grown by molecular beam epitaxy (MBE) were studied. An increase of the Stokes shift with the number of quantum wells (QWs) and the appearance of new lines in CL and PT spectra were observed. Room temperature (RT) vertical-cavity surface-emitting laser (VCSEL) operation was achieved by using the SL structures. Output power up to 2.2 W in single longitudinal mode with λ = 493 nm was obtained. Cut facet laser wavelength of the same SL structure was 502 nm.

Interplay of Cu and oxygen vacancy in optical transitions and screening of excitons in ZnO:Cu films

NASA Astrophysics Data System (ADS)

Darma, Yudi; Seng Herng, Tun; Marlina, Resti; Fauziah, Resti; Ding, Jun; Rusydi, Andrivo

2014-02-01

We study room temperature optics and electronic structures of ZnO:Cu films as a function of Cu concentration using a combination of spectroscopic ellipsometry, photoluminescence, and ultraviolet-visible absorption spectroscopy. Mid-gap optical states, interband transitions, and excitons are observed and distinguishable. We argue that the mid-gap states are originated from interactions of Cu and oxygen vacancy (Vo). They are located below conduction band (Zn4s) and above valence band (O2p) promoting strong green emission and narrowing optical band gap. Excitonic states are screened and its intensities decrease upon Cu doping. Our results show the importance of Cu and Vo driving the electronic structures and optical transitions in ZnO:Cu films.

Simultaneous increase in strength and ductility by decreasing interface energy between Zn and Al phases in cast Al-Zn-Cu alloy.

PubMed

Han, Seung Zeon; Choi, Eun-Ae; Park, Hyun Woong; Lim, Sung Hwan; Lee, Jehyun; Ahn, Jee Hyuk; Hwang, Nong-Moon; Kim, Kwangho

2017-09-22

Cast-Al alloys that include a high amount of the second element in their matrix have comparatively high strength but low ductility because of the high volume fraction of strengthening phases or undesirable inclusions. Al-Zn alloys that have more than 30 wt% Zn have a tensile strength below 300 MPa, with elongation under 5% in the as-cast state. However, we found that after substitution of 2% Zn by Cu, the tensile strength of as-cast Al-Zn-Cu alloys was 25% higher and ductility was four times higher than for the corresponding Al-35% Zn alloy. Additionally, for the Al-43% Zn alloy with 2% Cu after 1 h solution treatment at 400 °C and water quenching, the tensile strength unexpectedly reached values close to 600 MPa. For the Al-33% Zn alloy with 2% Cu, the tensile strength was 500 MPa with 8% ductility. The unusual trends of the mechanical properties of Al-Zn alloys with Cu addition observed during processing from casting to the subsequent solution treatment were attributed to the precipitation of Zn in the Al matrix. The interface energy between the Zn particles and the Al matrix decreased when using a solution of Cu in Zn.

Effect of process conditions and chemical composition on the microstructure and properties of chemically vapor deposited SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x)

NASA Technical Reports Server (NTRS)

Pickering, Michael A.; Taylor, Raymond L.; Goela, Jitendra S.; Desai, Hemant D.

1992-01-01

Subatmospheric pressure CVD processes have been developed to produce theoretically dense, highly pure, void-free and large area bulk materials, SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x). These materials are used for optical elements, such as mirrors, lenses and windows, over a wide spectral range from the VUV to the IR. We discuss the effect of CVD process conditions on the microstructure and properties of these materials, with emphasis on optical performance. In addition, we discuss the effect of chemical composition on the properties of the composite material ZnS(x)Se(1-x). We first present a general overview of the bulk CVD process and the relationship between process conditions, such as temperature, pressure, reactant gas concentration and growth rate, and the microstructure, morphology and properties of CVD-grown materials. Then we discuss specific results for CVD-grown SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x).

Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells

NASA Astrophysics Data System (ADS)

Cheng, Ke; Han, Kaikai; Kuang, Zhongcheng; Jin, Ranran; Hu, Junxia; Guo, Longfei; Liu, Ya; Lu, Zhangbo; Du, Zuliang

2017-04-01

In this work, CuInGa alloy precursor films are fabricated by co-sputtering of CuIn and CuGa targets simultaneously. After selenization in a tube-type rapid thermal annealing system under a Se atmosphere, the Cu(In, Ga)Se2 (CIGS) absorber layers are obtained. Standard soda lime glass (SLG)/Mo/CIGS/CdS/i-ZnO/ITO/Ag grid structural solar cells are fabricated based on the selenized CIGS absorbers. The influences of selenization temperatures on the composition, crystallinity, and device performances are systematically investigated by x-ray energy dispersive spectroscopy, x-ray diffraction, Raman spectroscopy, and the current density-voltage ( J- V) measurement. It is found that the elemental ratio of Cu/(In + Ga) strongly depends on the selenization temperatures. Because of the appropriate elemental ratio, a 9.92% conversion efficiency is reached for the CIGS absorber selenized at 560°C. After the additional optimization by pre-annealing treatment at 280°C before the selenization, a highest conversion efficiency of 11.19% with a open-circuit ( V oc) of 456 mV, a short-circuit ( J sc) of 40.357 mA/cm2 and a fill factor of 60.82% without antireflection coating has been achieved. Above 13% efficiency improvement was achievable. Our experimental findings presented in this work demonstrate that the post-selenization of co-sputtered CuIn and CuGa precursor is a promising way to fabricate high quality CIGS absorbers.

Structural, chemical and optical evaluation of Cu-doped ZnO nanoparticles synthesized by an aqueous solution method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iribarren, A., E-mail: augusto@imre.oc.uh.cu; Hernández-Rodríguez, E.; Maqueira, L.

Highlights: • Cu-doped ZnO nanoparticles obtained by chemical synthesis. • Substitutional or interstitial Cu into ZnO lead specific structural, chemical, and optical changes. • Incorporation efficiency of Cu atoms in ZnO as a function of the Cu concentration in the precursor dissolution. - Abstract: In this work a study of ZnO and Cu-doped ZnO nanoparticles obtained by chemical synthesis in aqueous media was carried out. Structural analysis gave the dominant presence of wurtzite ZnO phase forming a solid solution Zn{sub 1−x}Cu{sub x}O. For high Cu doping CuO phase is also present. For low Cu concentration the lattice shrinks due tomore » Cu atoms substitute Zn atoms. For high Cu concentration the lattice enlarges due to predominance of interstitial Cu. From elemental analysis we determined and analyzed the incorporation efficiency of Cu atoms in Zn{sub 1−x}Cu{sub x}O as a function of the Cu concentration in the precursor dissolution. Combining structural and chemical results we described the Cu/Zn precursor concentrations r{sub w} in which the solid solution of Cu in ZnO is predominant. In the region located at r{sub w} ≈ 0.2–0.3 it is no longer valid. For Cu/Zn precursor concentration r{sub w} > 0.3 interstitial Cu dominates, and some amount of copper oxide appears. As the Cu concentration increases, the effective size of nanoparticles decreases. Photoluminescence (PL) measurements of the Cu-doped ZnO nanoparticles were carried out and analyzed.« less

Improved sensitivity of polychlorinated-biphenyl-orientated porous-ZnO surface photovoltage sensors from chemisorption-formed ZnO-CuPc composites

PubMed Central

Li, Mingtao; Meng, Guowen; Huang, Qing; Zhang, Shile

2014-01-01

We report a new mechanism for the enhancement of porous-ZnO surface photovoltage (SPV) response to polychlorinated biphenyls (PCBs, a notorious class of persistent organic pollutants as global environmental hazard) based on copper phthalocyanine (CuPc) chemisorptive bonding on porous-ZnO. A new ZnO-CuPc composite is formed on the porous-ZnO surface due to the interaction between the surface ZnO and CuPc, with its valence band (VB) energy level being higher than that of the pristine porous-ZnO. So that the efficiency of the photogenerated-electron transfer from the composite VB to the adjacent ZnO's surface states is drastically increased due to the reduced energy gap between the transition states. As a result, the sensitivity of the PCB-orientated SPV sensor is much improved by showing amplified variation of the SPV-signals perturbed by PCBs adsorbed on the ZnO-CuPc@porous-ZnO sensitive material. PMID:24594662

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe, and ZnSe(1-x)Te(x)(0 less than x less than 0.4) grown by physical vapor transport. Energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. A best fit curve to the band gap versus composition x data gives a bowing parameter of 1.45. This number lies between the value of 1.23 determined previously on ZnSeTe bulk crystals and the value of 1.621 reported on ZnSeTe epilayers. Low-temperature photoluminescence (PL) spectra were measured on six samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe(1-x)Te(x) samples, 0.09 less than x less than 0.39. For x=0.09, this emission energy is about 0.2 eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x=0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples.

P-Type Transparent Cu-Alloyed ZnS Deposited at Room Temperature

DOE PAGES

Woods-Robinson, Rachel; Cooper, Jason K.; Xu, Xiaojie; ...

2016-03-16

All transparent conducting materials (TCMs) of technological practicality are n-type; the inferior conductivity of p-type TCMs has limited their adoption. Additionally, many relatively high-performing p-type TCMs require synthesis temperatures > 400 °C. Here, room-temperature pulsed laser deposition of copper-alloyed zinc sulfide (Cu x Zn 1- x S) thin films (0 ≤ x ≤ 0.75) is reported. For 0.09 ≤ x ≤ 0.35, Cu x Zn 1- x S has high p-type conductivity, up to 42 S cm -1 at x = 0.30, with an optical band gap tunable from ≈3.0–3.3 eV and transparency, averaged over the visible, of 50%–71% formore » 200–250 nm thick films. In this range, synchrotron X-ray and electron diffraction reveal a nanocrystalline ZnS structure. Secondary crystalline Cu y S phases are not observed, and at higher Cu concentrations, x > 0.45, films are amorphous and poorly conducting. Furthermore, within the TCM regime, the conductivity is temperature independent, indicating degenerate hole conduction. A decrease in lattice parameter with Cu content suggests that the hole conduction is due to substitutional incorporation of Cu onto Zn sites. This hole-conducting phase is embedded in a less conducting amorphous Cu y S, which dominates at higher Cu concentrations. Finally, the combination of high hole conductivity and optical transparency for the peak conductivity Cu x Zn 1- x S films is among the best reported to date for a room temperature deposited p-type TCM.« less

Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

NASA Astrophysics Data System (ADS)

Aamir Hassan, Muhammad; Mujahid, Mohammad; Woei, Leow Shin; Wong, Lydia Helena

2018-03-01

Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well

NASA Astrophysics Data System (ADS)

Fan, W. C.; Chou, W. C.; Lee, J. D.; Lee, Ling; Phu, Nguyen Dang; Hoang, Luc Huy

2018-03-01

We demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than 2 nm, the carrier lifetime increasing from 20 ns to nearly 200 ns was successfully achieved. By utilizing the time-resolved photoluminescence (TRPL) and PL with different excitation power, we identify the PL emission from the coupled QDs consisting of two recombination mechanisms. One is the recombination between electrons in ZnSe barrier and holes confined within ZnTe QDs, and the other is between electrons confined in Zn0.88Cd0.12Se QW and holes confined within ZnTe QDs. According to the band diagram and power-dependent PL, both of the two recombinations reveal the type-II transition. In addition, the second recombination mechanism dominates the whole carrier recombination as the spacer thickness is less than 2 nm. A significant extension of carrier lifetime by increasing the electron and hole separation is illustrated in a type-II ZnTe/ZnSe QD structure coupling with a type-I ZnCdSe/ZnSe QW. Current sample structure could be used to increase the quantum efficient of solar cell based on the II-VI compound semiconductors.

Concentration of selenium, zinc, copper, Cu/Zn ratio, total antioxidant status and c-reactive protein in the serum of patients with psoriasis treated by narrow-band ultraviolet B phototherapy: A case-control study.

PubMed

Wacewicz, Marta; Socha, Katarzyna; Soroczyńska, Jolanta; Niczyporuk, Marek; Aleksiejczuk, Piotr; Ostrowska, Jolanta; Borawska, Maria H

2017-12-01

Psoriasis is a common, an inflammatory skin disease. Trace elements may play an active role in the pathogenesis of psoriasis. The aim of this study was to estimate the concentration of selenium (Se), zinc (Zn), copper (Cu) and Cu/Zn ratio as well as total antioxidant status (TAS) and c-reactive protein (CRP) in the serum of patients with psoriasis. In this case-control study sixty patients with psoriasis and fifty-eight healthy people were examined. Serum levels of Se, Zn and Cu were determined by atomic absorption spectrometry. Cu/Zn ratio was calculated. TAS was measured spectrophotometrically. CRP was analyzed by immunoturbidimetric method. Clinical activity of psoriasis was evaluated using Psoriasis Area and Severity Index (PASI). Serum concentration of Se in patients with psoriasis (71.89±16.90μg/L) was lower as compared to the control group (79.42±18.97μg/L) and after NB-UVB. Cu level of patients was higher (1.151±0.320mg/L) as compared to controls (1.038±0.336mg/L), but Zn level did not differ. We observed higher Cu/Zn ratio (p<0.05) in examined patients than in the control group and after NB-UVB. We found decrease TAS before and after NB-UVB. CRP levels was found to be normal range. A significant correlation coefficient between CRP and Cu/Zn was observed. The study showed some disturbances in the serum levels of trace elements and TAS in psoriatic patients. Copyright © 2017 The Authors. Published by Elsevier GmbH.. All rights reserved.

Chemical fractionation of Cu and Zn in stormwater, roadway dust and stormwater pond sediments

USGS Publications Warehouse

Camponelli, Kimberly M.; Lev, Steven M.; Snodgrass, Joel W.; Landa, Edward R.; Casey, Ryan E.

2010-01-01

This study evaluated the chemical fractionation of Cu and Zn from source to deposition in a stormwater system. Cu and Zn concentrations and chemical fractionation were determined for roadway dust, roadway runoff and pond sediments. Stormwater Cu and Zn concentrations were used to generate cumulative frequency distributions to characterize potential exposure to pond-dwelling organisms. Dissolved stormwater Zn exceeded USEPA acute and chronic water quality criteria in approximately 20% of storm samples and 20% of the storm duration sampled. Dissolved Cu exceeded the previously published chronic criterion in 75% of storm samples and duration and exceeded the acute criterion in 45% of samples and duration. The majority of sediment Cu (92–98%) occurred in the most recalcitrant phase, suggesting low bioavailability; Zn was substantially more available (39–62% recalcitrant). Most sediment concentrations for Cu and Zn exceeded published threshold effect concentrations and Zn often exceeded probable effect concentrations in surface sediments.

Crystal structure, Raman scattering and magnetic properties of CuCr2-xZrxSe4 and CuCr2-xSnxSe4 selenospinels

NASA Astrophysics Data System (ADS)

Pinto, C.; Galdámez, A.; Barahona, P.; Moris, S.; Peña, O.

2018-06-01

Selenospinels, CuCr2-xMxSe4 (M = Zr and Sn), were synthesized via conventional solid-state reactions. The crystal structure of CuCr1.5Sn0.5Se4, CuCr1.7Sn0.3Se4, CuCr1.5Zr0.5Se4, and CuCr1.8Zr0.2Se4 were determined using single-crystal X-ray diffraction. All the phases crystallized in a cubic spinel-type structure. The chemical compositions of the single-crystals were examined using energy-dispersive X-ray analysis (EDS). Powder X-ray diffraction patterns of CuCr1.3Sn0.7Se4 and CuCr1.7Sn0.3Se4 were consistent with phases belonging to the Fd 3 bar m Space group. An analysis of the vibrational properties on the single-crystals was performed using Raman scattering measurements. The magnetic properties showed a spin glass behavior with increasing Sn content and ferromagnetic order for CuCr1.7Sn0.3Se4.

The effect of stoichiometry on Cu-Zn ordering kinetics in Cu2ZnSnS4 thin films

NASA Astrophysics Data System (ADS)

Rudisch, Katharina; Davydova, Alexandra; Platzer-Björkman, Charlotte; Scragg, Jonathan

2018-04-01

Cu-Zn disorder in Cu2ZnSnS4 (CZTS) may be responsible for the large open circuit voltage deficit in CZTS based solar cells. In this study, it was investigated how composition-dependent defect complexes influence the order-disorder transition. A combinatorial CZTS thin film sample was produced with a cation composition gradient across the sample area. The graded sample was exposed to various temperature treatments and the degree of order was analyzed with resonant Raman spectroscopy for various compositions ranging from E- and A-type to B-, F-, and C-type CZTS. We observe that the composition has no influence on the critical temperature of the order-disorder transition, but strongly affects the activation energy. Reduced activation energy is achieved with compositions with Cu/Sn > 2 or Cu/Sn < 1.8 suggesting an acceleration of the cation ordering in the presence of vacancies or interstitials. This is rationalized with reference to the effect of point defects on exchange mechanisms. The implications for reducing disorder in CZTS thin films are discussed in light of the new findings.

Near-Infrared-Emitting CuInS2/ZnS Dot-in-Rod Colloidal Heteronanorods by Seeded Growth

PubMed Central

2018-01-01

Synthesis protocols for anisotropic CuInX2 (X = S, Se, Te)-based heteronanocrystals (HNCs) are scarce due to the difficulty in balancing the reactivities of multiple precursors and the high solid-state diffusion rates of the cations involved in the CuInX2 lattice. In this work, we report a multistep seeded growth synthesis protocol that yields colloidal wurtzite CuInS2/ZnS dot core/rod shell HNCs with photoluminescence in the NIR (∼800 nm). The wurtzite CuInS2 NCs used as seeds are obtained by topotactic partial Cu+ for In3+ cation exchange in template Cu2–xS NCs. The seed NCs are injected in a hot solution of zinc oleate and hexadecylamine in octadecene, 20 s after the injection of sulfur in octadecene. This results in heteroepitaxial growth of wurtzite ZnS primarily on the Sulfur-terminated polar facet of the CuInS2 seed NCs, the other facets being overcoated only by a thin (∼1 monolayer) shell. The fast (∼21 nm/min) asymmetric axial growth of the nanorod proceeds by addition of [ZnS] monomer units, so that the polarity of the terminal (002) facet is preserved throughout the growth. The delayed injection of the CuInS2 seed NCs is crucial to allow the concentration of [ZnS] monomers to build up, thereby maximizing the anisotropic heteroepitaxial growth rates while minimizing the rates of competing processes (etching, cation exchange, alloying). Nevertheless, a mild etching still occurred, likely prior to the onset of heteroepitaxial overgrowth, shrinking the core size from 5.5 to ∼4 nm. The insights provided by this work open up new possibilities in designing multifunctional Cu-chalcogenide based colloidal heteronanocrystals. PMID:29569443

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Yang, J.; Du, H. W.; Li, Y.; Gao, M.; Wan, Y. Z.; Xu, F.; Ma, Z. Q.

2016-08-01

The carriers' behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se2 thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely VSe, InCu and (InCu+VCu), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of EC-0.08, EC-0.20 and EC-0.25 eV, respectively. The InCu and (InCu+VCu) deep level defects are non-radiative recombination centers at room temperature. The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se2 layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (InCu+VCu) and Vse defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se2 conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.

Non-blinking (Zn)CuInS/ZnS Quantum Dots Prepared by In Situ Interfacial Alloying Approach

PubMed Central

Zhang, Aidi; Dong, Chaoqing; Li, Liang; Yin, Jinjin; Liu, Heng; Huang, Xiangyi; Ren, Jicun

2015-01-01

Semiconductor quantum dots (QDs) are very important optical nanomaterials with a wide range of potential applications. However, blinking behavior of single QD is an intrinsic drawback for some biological and photoelectric applications based on single-particle emission. Herein we present a rational strategy for fabrication of non-blinking (Zn)CuInS/ZnS QDs in organic phase through in situ interfacial alloying approach. This new strategy includes three steps: synthesis of CuInS QDs, eliminating the interior traps of QDs by forming graded (Zn)CuInS alloyed QDs, modifying the surface traps of QDs by introducing ZnS shells onto (Zn)CuInS QDs using alkylthiols as sulfur source and surface ligands. The suppressed blinking mechanism was mainly attributed to modifying QDs traps from interior to exterior via a step-by-step modification. Non-blinking QDs show high quantum yield, symmetric emission spectra and excellent crystallinity, and will enable applications from biology to optoelectronics that were previously hindered by blinking behavior of traditional QDs. PMID:26458511

Isolation and characterization of Cu/Zn-superoxide dismutase in Fasciola gigantica.

PubMed

Lalrinkima, H; Raina, O K; Chandra, Dinesh; Jacob, Siju Susan; Bauri, R K; Chandra, Subhash; Yadav, H S; Singh, M N; Rialch, A; Varghese, A; Banerjee, P S; Kaur, Navneet; Sharma, Arvind

2015-01-01

A full-length complementary DNA (cDNA) encoding Cu/Zn-superoxide dismutase was isolated from Fasciola gigantica that on nucleotide sequencing showed a close homology (98.9%) with Cu/Zn-superoxide dismutase (SOD) of the temperate liver fluke, F. hepatica. Expression of the gene was found in all the three developmental stages of the parasite viz. adult, newly excysted juvenile and metacercaria at transcriptional level by reverse transcription-polymerase chain reaction (RT-PCR) and at the protein level by Western blotting. F. gigantica Cu/Zn-SOD cDNA was cloned and expressed in Escherichia coli. Enzyme activity of the recombinant protein was determined by nitroblue tetrazolium (NBT)-polyacrylamide gel electrophoresis (PAGE) and this activity was inactivated by hydrogen peroxide but not by sodium azide, indicating that the recombinant protein is Cu/Zn-SOD. The enzyme activity was relatively stable at a broad pH range of pH 4.0-10.0. Native Cu/Zn-superoxide dismutase protein was detected in the somatic extract and excretory-secretory products of the adult F. gigantica by Western blotting. NBT-PAGE showed a single Cu/Zn-SOD present in the somatic extract while three SODs are released ex vivo by the adult parasite. The recombinant superoxide dismutase did not react with the serum from buffaloes infected with F. gigantica. The role of this enzyme in defense by the parasite against the host reactive oxygen species is discussed. Copyright © 2015 Elsevier Inc. All rights reserved.

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.; Todorov, Teodor; Mitzi, David B.; Guha, Supratik

2011-01-01

We have carried out detailed microstructural studies of phase separation and grain boundary composition in Cu2ZnSnS4 based solar cells. The absorber layer was fabricated by thermal evaporation followed by post high temperature annealing on hot plate. We show that inter-reactions between the bottom molybdenum and the Cu2ZnSnS4, besides triggering the formation of interfacial MoSx, results in the out-diffusion of Cu from the Cu2ZnSnS4 layer. Phase separation of Cu2ZnSnS4 into ZnS and a Cu-Sn-S compound is observed at the molybdenum-Cu2ZnSnS4 interface, perhaps as a result of the compositional out-diffusion. Additionally, grain boundaries within the thermally evaporated absorber layer are found to be either Cu-rich or at the expected bulk composition. Such interfacial compound formation and grain boundary chemistry likely contributes to the lower than expected open circuit voltages observed for the Cu2ZnSnS4 devices.

Generalized stacking fault energies, cleavage energies, ionicity and brittleness of Cu(Al/Ga/In)Se2 and CuGa(S/Se/Te)2

NASA Astrophysics Data System (ADS)

Xue, H. T.; Tang, F. L.; Gruhn, T.; Lu, W. J.; Wan, F. C.; Rui, Z. Y.; Feng, Y. D.

2014-04-01

We calculate the generalized stacking fault (GSF) energies and cleavage energies γcl of the chalcopyrite compounds CuAlSe2, CuGaSe2, CuInSe2, CuGaS2 and CuGaTe2 using first principles. From the GSF energies, we obtain the unstable stacking fault energies γus and intrinsic stacking fault energies γisf. By analyzing γus and γisf, we find that the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) direction is the easiest slip direction for these five compounds. Also, for CuInSe2, it is most possible to undergo a dislocation-nucleation-induced plastic deformation along the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) slip direction. We show that the (1 1 2) plane is the preferable plane for fracture in the five compounds by comparing γcl of the (0 0 1) and (1 1 2) planes. It is also found that both γus and γcl decrease as the cationic or anionic radius increases in these chalcopyrites, i.e. along the sequences CuAlSe2 → CuGaSe2 → CuInSe2 and CuGaS2 → CuGaSe2 → CuGaTe2. Based on the values of the ratio γcl/γus, we discuss the brittle-ductile properties of these compounds. All of the compounds can be considered as brittle materials. In addition, a strong relationship between γcl/γus and the total proportion of ionic bonding in these compounds is found.

Electronic structure and exchange interactions in diluted semimagnetic semiconductors (Zn,Co)Se and (Zn,Mn)Se

NASA Astrophysics Data System (ADS)

Mašek, J.

1991-05-01

A comparative study of the electronic structure of (Zn,Co)Se and (Zn,Mn)Se is done by using a tight-binding version of the coherent potential approximation. The densities of states, relevant for a photoemission experiment, are calculated for a magnetically disordered phase. The exchange constant Jpd is obtained from the splitting of the valence band top in the ferromagnetic phase of the mixed crystal; Jdd is estimated from the energy of a spin reversal. We explain the large exchange constant in the Co-based systems as a result of efficient hybridization of the d-states with the valence band.

Effects of CuZnAl Particles on Properties and Microstructure of Sn-58Bi Solder

PubMed Central

Yang, Fan; Zhang, Liang; Liu, Zhi-quan; Zhong, Su Juan; Ma, Jia; Bao, Li

2017-01-01

With the purpose of improving the properties of the Sn-58Bi lead-free solder, micro-CuZnAl particles ranging from 0 to 0.4 wt % were added into the low temperature eutectic Sn-58Bi lead-free solder. After the experimental testing of micro-CuZnAl particles on the properties and microstructure of the Sn-58Bi solders, it was found that the wettability of the Sn-58Bi solders was obviously improved with addition of CuZnAl particles. When the addition of CuZnAl particles was 0.2 wt %, the wettability of the Sn-58Bi solder performed best. At the same time, excessive addition of CuZnAl particles led to poor wettability. However, the results showed that CuZnAl particles changed the melting point of the Sn-58Bi solder slightly. The microstructure of the Sn-58Bi solder was refined by adding CuZnAl particles. When the content of CuZnAl addition was between 0.1 and 0.2 wt %, the refinement was great. In addition, the interfacial IMC layer between new composite solder and Cu substrate was thinner than that between the Sn-58Bi solder and Cu substrate. PMID:28772917

Chelation of Cu(II), Zn(II), and Fe(II) by tannin constituents of selected edible nuts.

PubMed

Karamać, Magdalena

2009-12-22

The tannin fractions isolated from hazelnuts, walnuts and almonds were characterised by colorimetric assays and by an SE-HPLC technique. The complexation of Cu(II) and Zn(II) was determined by the reaction with tetramethylmurexide, whereas for Fe(II), ferrozine was employed. The walnut tannins exhibited a significantly weaker reaction with the vanillin/HCl reagent than hazelnut and almond tannins, but the protein precipitation capacity of the walnut fraction was high. The SE-HPLC chromatogram of the tannin fraction from hazelnuts revealed the presence of oligomers with higher molecular weights compared to that of almonds. Copper ions were most effectively chelated by the constituents of the tannin fractions of hazelnuts, walnuts and almonds. At a 0.2 mg/assay addition level, the walnut tannins complexed almost 100% Cu(II). The Fe(II) complexation capacities of the tannin fractions of walnuts and hazelnuts were weaker in comparison to that of the almond tannin fraction, which at a 2.5 mg/assay addition level, bound Fe(II) by approximately 90%. The capacity to chelate Zn(II) was quite varied for the different nut tannin fractions: almond tannins bound as much as 84% Zn(II), whereas the value for walnut tannins was only 8.7%; and for hazelnut tannins, no Zn(II) chelation took place at the levels tested.

Chelation of Cu(II), Zn(II), and Fe(II) by Tannin Constituents of Selected Edible Nuts

PubMed Central

Karamać, Magdalena

2009-01-01

The tannin fractions isolated from hazelnuts, walnuts and almonds were characterised by colorimetric assays and by an SE-HPLC technique. The complexation of Cu(II) and Zn(II) was determined by the reaction with tetramethylmurexide, whereas for Fe(II), ferrozine was employed. The walnut tannins exhibited a significantly weaker reaction with the vanillin/HCl reagent than hazelnut and almond tannins, but the protein precipitation capacity of the walnut fraction was high. The SE-HPLC chromatogram of the tannin fraction from hazelnuts revealed the presence of oligomers with higher molecular weights compared to that of almonds. Copper ions were most effectively chelated by the constituents of the tannin fractions of hazelnuts, walnuts and almonds. At a 0.2 mg/assay addition level, the walnut tannins complexed almost 100% Cu(II). The Fe(II) complexation capacities of the tannin fractions of walnuts and hazelnuts were weaker in comparison to that of the almond tannin fraction, which at a 2.5 mg/assay addition level, bound Fe(II) by ~90%. The capacity to chelate Zn(II) was quite varied for the different nut tannin fractions: almond tannins bound as much as 84% Zn(II), whereas the value for walnut tannins was only 8.7%; and for hazelnut tannins, no Zn(II) chelation took place at the levels tested. PMID:20054482

Transparent Cu4O3/ZnO heterojunction photoelectric devices

NASA Astrophysics Data System (ADS)

Kim, Hong-Sik; Yadav, Pankaj; Patel, Malkeshkumar; Kim, Joondong; Pandey, Kavita; Lim, Donggun; Jeong, Chaehwan

2017-12-01

The present article reports the development of flexible, self-biased, broadband, high speed and transparent heterojunction photodiode, which is essentially important for the next generation electronic devices. We grow semitransparent p-type Cu4O3 using the reactive sputtering method at room temperature. The structural and optical properties of the Cu4O3 film were investigated by using the X-ray diffraction and UV-visible spectroscopy, respectively. The p-Cu4O3/n-ZnO heterojunction diode under dark condition yields rectification behavior with an extremely low saturation current value of 1.8 × 10-10 A and a zero bias photocurrent under illumination condition. The transparent p-Cu4O3/n-ZnO heterojunction photodetector can be operated without an external bias, due to the light-induced voltage production. The metal oxide heterojunction based on Cu4O3/ZnO would provide a route for the transparent and flexible photoelectric devices, including photodetectors and photovoltaics.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

NASA Astrophysics Data System (ADS)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

μSR investigation of a new diluted magnetic semiconductor Li(Zn,Mn,Cu)As with Mn and Cu codoping at the same Zn sites

NASA Astrophysics Data System (ADS)

Guo, S. L.; Zhao, Y.; Man, H. Y.; Ding, C.; Gong, X.; Zhi, G. X.; Fu, L. C.; Gu, Y. L.; Frandsen, B. A.; Liu, L.; Cheung, S. C.; Munsie, T. J.; Wilson, M. N.; Cai, Y. P.; Luke, G. M.; Uemura, Y. J.; Ning, F. L.

2016-09-01

We report the successful synthesis and characterization of a new type I-II-V bulk form diluted magnetic semiconductor (DMS) Li(Zn,Mn,Cu)As, in which charge and spin doping are decoupled via (Cu,Zn) and (Mn,Zn) substitution at the same Zn sites. Ferromagnetic transition temperature up to  ˜33 K has been observed with a coercive field  ˜40 Oe for the 12.5% doping level. μSR measurements confirmed that the magnetic volume fraction reaches nearly 100% at 2 K, and the mechanism responsible for the ferromagnetic interaction in this system is the same as other bulk form DMSs.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O.

PubMed

Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V; Pillai, Vijayamohanan K

2014-08-07

Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, "as grown" CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ∼ 470 μA cm(-2)) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.

Nucleoside-2',3'/3',5'-bis(thio)phosphate antioxidants are also capable of disassembly of amyloid beta42-Zn(ii)/Cu(ii) aggregates via Zn(ii)/Cu(ii)-chelation.

PubMed

Hevroni, Bosmat Levi; Major, Dan Thomas; Dixit, Mudit; Mhashal, Anil Ranu; Das, Susanta; Fischer, Bilha

2016-05-18

Currently, there is an urgent need for biocompatible metal-ion chelators capable of antioxidant activity and disassembly of amyloid beta (Aβ)-aggregates as potential therapeutics for Alzheimer's disease (AD). We recently demonstrated the promising antioxidant activity of adenine/guanine 2',3' or 3',5'-bis(thio)phosphate analogues, 2'-dA/G3'5'PO/S and A2'3'PO/S, and their affinity to Zn(ii)-ions. These findings encouraged us to evaluate them as agents for the dissolution of Aβ42-Zn(ii)/Cu(ii) aggregates. Specifically, we explored their ability to bind Cu(ii)/Zn(ii)-ions, the geometry and stoichiometry of these complexes, Cu(ii)/Zn(ii)-binding-sites and binding mode, and the ability of these analogues to dissolve Aβ42-Zn(ii)/Cu(ii) aggregates, as well as their effect on the secondary structure of those aggregates. Finally, we identified the most promising agents for dissolution of Aβ42-Zn(ii)/Cu(ii) aggregates. Specifically, we observed the formation of a 1 : 1 complex between 2'-dG3'5'PO and Cu(ii), involving O4 ligands. Zn(ii) was coordinated by both thiophosphate groups of 2'-dA3'5'PS and A2'3'PS involving O2S2 ligands in a 1 : 1 stoichiometry. A2'3'PS dissolves Aβ42-Zn(ii) and Aβ42-Cu(ii) aggregates as effectively as, and 2.5-fold more effectively than EDTA, respectively. Furthermore, 2'-dG3'5'PS and A2'3'PS reverted the Aβ42-M(ii) structure, back to that of the free Aβ42. Finally, cryo-TEM and TEM images confirmed the disassembly of Aβ42 and Aβ42-M(ii) aggregates by A2'3'PS. Hence, 2'-dG3'5'PS and A2'3'PS may serve as promising scaffolds for new AD therapeutics, acting as both effective antioxidants and agents for solubilization of Aβ42-Cu(ii)/Zn(ii) aggregates.

Temperature induced CuInSe2 nanocrystal formation in the Cu2Se-In3Se2 multilayer thin films

NASA Astrophysics Data System (ADS)

Mohan, A.; Rajesh, S.

2017-04-01

The paper deals with the impact of annealing on Cu2Se-In3Se2 multilayer structure and discusses the quantum confinements. Thermal evaporation technique was used to prepare multilayer films over the glass substrates. The films were annealed at different temperatures (150 °C-350 °C) under vacuum atmosphere. The XRD pattern reveals that the films exhibit (112) peaks with CuInSe2 Chalcopyrite structure and upon annealing crystallinity improved. The grain size comes around 13-19 nm. The optical band gap value was found to be 2.21 to 2.09 eV and band gap splitting was observed for higher annealing temperatures. The increase in the band gap is related to quantum confinement effect. SEM image shows nano crystals spread over the entire surface for higher annealing temperatures. Optical absorption and PL spectra shows the blue shift during annealing. The HR-TEM shows the particle size in the nano range and which confirms the CuInSe2 nanocrystal formation. AFM image shows the rough surface with homogenous grains for the as deposited films and smooth surface for annealed films.

Phosphine-free synthesis of high-quality reverse type-I ZnSe/CdSe core with CdS/CdxZn1 - xS/ZnS multishell nanocrystals and their application for detection of human hepatitis B surface antigen

NASA Astrophysics Data System (ADS)

Shen, Huaibin; Yuan, Hang; Niu, Jin Zhong; Xu, Shasha; Zhou, Changhua; Ma, Lan; Li, Lin Song

2011-09-01

Highly photoluminescent (PL) reverse type-I ZnSe/CdSe nanocrystals (NCs) and ZnSe/CdSe/CdS/CdxZn1 - xS/ZnS core/multishell NCs were successfully synthesized by a phosphine-free method. By this low-cost, 'green' synthesis route, more than 10 g of high-quality ZnSe/CdSe/CdS/CdxZn1 - xS/ZnS NCs were synthesized in a large scale synthesis. After the overgrowth of a CdS/CdxZn1 - xS/ZnS multishell on ZnSe/CdSe cores, the PL quantum yields (QYs) increased from 28% to 75% along with the stability improvement. An amphiphilic oligomer was used as a surface coating agent to conduct a phase transfer experiment, core/multishell NCs were dissolved in water by such surface modification and the QYs were still kept above 70%. The as-prepared water dispersible ZnSe/CdSe/CdS/CdxZn1 - xS/ZnS core/multishell NCs not only have high fluorescence QYs but also are extremely stable in various physiological conditions. Furthermore, a biosensor system (lateral flow immunoassay system, LFIA) for the detection of human hepatitis B surface antigen (HBsAg) was developed by using this water-soluble core/multishell NCs as a fluorescent label and a nitrocellulose filter membrane for lateral flow. The result showed that such ZnSe/CdSe/CdS/CdxZn1 - xS/ZnS core/multishell NCs were excellent fluorescent labels to detect HBsAg. The sensitivity of HBsAg detection could reach as high as 0.05 ng ml - 1.

Microstructures and Mechanical Properties of Cu and Cu-Zn Alloys

NASA Astrophysics Data System (ADS)

Ma, Xiaolong

Strength and ductility are two crucial mechanical properties of structural materials, which, unfortunately, are often mutually exclusive based on the conventional design of microstructures and their deformation physics. This is also true in most nanostructured (NS) metals and alloys although they exhibit record-high strength. However, the disappointingly inadequate ductility becomes the major roadblock to their practical utilities due to the threat of catastrophic failure in load-bearing applications. Therefore, simultaneous improvement of strength and ductility or a well-defined trade-off between these two properties, i.e. increasing either of them without significant loss of the other, in NS materials has garnered extensive efforts from the research community. A few strategies have been explored to handle this long-standing challenge with promise. In this dissertation work, two of those strategies, deformation twins and laminate/gradient structures are specified with particular interests in NS Cu and Cu-Zn alloys. The author believes the observation and the revealed underlying mechanism are fundamental and therefore shed lights on their universal application to other metallic material systems. Deformation twins have been frequently observed in ultra-fined grained (UFG) and NS face-centered cubic (FCC) metals and alloys, which is closely related to the better strengthening and strain hardening in mechanical performance. Previous findings even show that there exist an optimum grain size range within nano scale, where the deformation twins are of most frequency, i.e. most stable in pure FCC metals. However, such grain-size dependent twinning phenomenon is still unclear in FCC alloys. We report, for the first time in systematic experiments, the observed optimum grain sizes for deformation twins in NS Cu-Zn alloys slightly increase with increasing Zn content. Our results indicate that alloying changes the relationship between the stacking-fault and twin-fault energy

Functional Performances of CuZnAl Shape Memory Alloy Open-Cell Foams

NASA Astrophysics Data System (ADS)

Biffi, C. A.; Casati, R.; Bassani, P.; Tuissi, A.

2018-01-01

Shape memory alloys (SMAs) with cellular structure offer a unique mixture of thermo-physical-mechanical properties. These characteristics can be tuned by changing the pore size and make the shape memory metallic foams very attractive for developing new devices for structural and functional applications. In this work, CuZnAl SMA foams were produced through the liquid infiltration of space holder method. In comparison, a conventional CuZn brass alloy was foamed trough the same method. Functional performances were studied on both bulk and foamed SMA specimens. Calorimetric response shows similar martensitic transformation (MT) below 0 °C. Compressive response of CuZnAl revealed that mechanical behavior is strongly affected by sample morphology and that damping capacity of metallic foam is increased above the MT temperatures. The shape memory effect was detected in the CuZnAl foams. The conventional brass shows a compressive response similar to that of the martensitic CuZnAl, in which plastic deformation accumulation occurs up to the cellular structure densification after few thermal cycles.

Facile synthesis and photocatalytic activity of bi-phase dispersible Cu-ZnO hybrid nanoparticles

NASA Astrophysics Data System (ADS)

Liu, Xiao; Liu, HongLing; Zhang, WenXing; Li, XueMei; Fang, Ning; Wang, XianHong; Wu, JunHua

2015-04-01

Bi-phase dispersible Cu-ZnO hybrid nanoparticles were synthesized by one-pot non-aqueous nanoemulsion with the use of poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) (PEO-PPO-PEO) as the surfactant. The transmission electron microscopy (TEM) and X-ray diffraction (XRD) show high crystallinity of the Cu-ZnO hybrid nanoparticles and an average particle size of ~19.4 nm. The ultraviolet-visible light absorbance spectrometry (UV-vis) and photoluminescence spectrophotometry (PL) demonstrate well dispersibility and excellent optical performance of Cu-ZnO hybrid nanoparticles both in organic and aqueous solvent. The X-ray photoelectron spectroscopy (XPS) confirms Cu1+ and Cu2+ in ZnO. The observation using Sudan red (III) as probe molecule reveals that the Cu-ZnO hybrid nanoparticles possess enhanced photocatalytic activity and stability which are promising for potential applications in photocatalysis.

Syntheses, structures, and properties of imidazolate-bridged Cu(II)-Cu(II) and Cu(II)-Zn(II) dinuclear complexes of a single macrocyclic ligand with two hydroxyethyl pendants.

PubMed

Li, Dongfeng; Li, Shuan; Yang, Dexi; Yu, Jiuhong; Huang, Jin; Li, Yizhi; Tang, Wenxia

2003-09-22

The imidazolate-bridged homodinuclear Cu(II)-Cu(II) complex, [(CuimCu)L]ClO(4).0.5H(2)O (1), and heterodinuclear Cu(II)-Zn(II) complex, [(CuimZnL(-)(2H))(CuimZnL(-)(H))](ClO(4))(3) (2), of a single macrocyclic ligand with two hydroxyethyl pendants, L (L = 3,6,9,16,19,22-hexaaza-6,19-bis(2-hydroxyethyl)tricyclo[22,2,2,2(11,14)]triaconta-1,11,13,24,27,29-hexaene), have been synthesized as possible models for copper-zinc superoxide dismutase (Cu(2),Zn(2)-SOD). Their crystal structures analyzed by X-ray diffraction methods have shown that the structures of the two complexes are markedly different. Complex 1 crystallizes in the orthorhombic system, containing an imidazolate-bridged dicopper(II) [Cu-im-Cu](3+) core, in which the two copper(II) ions are pentacoordinated by virtue of an N4O environment with a Cu.Cu distance of 5.999(2) A, adopting the geometry of distorted trigonal bipyramid and tetragonal pyramid, respectively. Complex 2 crystallizes in the triclinic system, containing two similar Cu-im-Zn cores in the asymmetric unit, in which both the Cu(II) and Zn(II) ions are pentacoordinated in a distorted trigonal bipyramid geometry, with the Cu.Zn distance of 5.950(1)/5.939(1) A, respectively. Interestingly, the macrocyclic ligand with two arms possesses a chairlike (anti) conformation in complex 1, but a boatlike (syn) conformation in complex 2. Magnetic measurements and ESR spectroscopy of complex 1 have revealed the presence of an antiferromagnetic exchange interaction between the two Cu(II) ions. The ESR spectrum of the Cu(II)-Zn(II) heterodinuclear complex 2 displayed a typical signal for mononuclear trigonal bipyramidal Cu(II) complexes. From pH-dependent ESR and electronic spectroscopic studies, the imidazolate bridges in the two complexes have been found to be stable over broad pH ranges. The cyclic voltammograms of the two complexes have been investigated. Both of the two complexes can catalyze the dismutation of superoxide and show rather high activity.

Microstructure and thermoelectric properties of CuInSe2/In2Se3 compound

NASA Astrophysics Data System (ADS)

Wang, Kang; Feng, Jing; Ge, Zhen-Hua; Qin, Peng; Yu, Jie

2018-01-01

CuInSe2 powders were synthesized by solvothermal method, and then the CuInSe2/In2Se3 bulk samples were fabricated by spark plasma sintering (SPS) technique. To investigate the phase composition, the powders were determined by X-ray diffraction (XRD). The microstructures of the powders and bulk samples were observed by scanning electron microscopy (SEM). The transportation of the electronic properties and thermal conductivity were measured at room temperature to 700 K. According to the results, the CuInSe2 powders appeared in flower-like patterns which ranged from 3 μm to 6 μm. CuInSe2 powders were synthesized at 180∘C with a chalcopyrite structure. The Seebeck coefficient increased significantly in composite thermoelectric materials up to 200μVṡK-1 at 623 K. The thermal conductivity of the sample significantly decreases from the room temperature to 700 K. The CuInSe2 bulk composite by solvothermal method achieves the highest ZT value of 0.187 at 700 K.

Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

PubMed

Koo, Jaseok; Kim, Sammi; Cheon, Taehoon; Kim, Soo-Hyun; Kim, Woo Kyoung

2018-03-02

Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se 2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe 2 and Cu(InGa)Se 2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se 2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min.

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe and ZnSe (sub 1-x) Te (sub x) (0 less than x less than 0.4) grown by physical vapor transport technique. The energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. The best fit to the band gap vs. composition, x, data gives a bowing parameter of 1.336 which is between the value of 1.23 determined previously on ZnSeTe bulk crystals by reflectivity and the value of 1.621 reported on epilayers by photoconductivity. Low-temperature photoluminescence (PL) spectra were measured on 6 samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe (sub 1-x) Te (sub x) samples, 0.09 less than x less than 0.39. For x = 0.09, this emission energy is about 0.2eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x = 0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted to be associated with the exciton bound to Te clusters because of the high Te content in these samples.

Dilute electrodeposition of TiO2 and ZnO thin film memristors on Cu substrate

NASA Astrophysics Data System (ADS)

Fauzi, F. B.; Ani, M. H.; Herman, S. H.; Mohamed, M. A.

2018-03-01

Memristor has become one of the alternatives to replace the current memory technologies. Fabrication of titanium dioxide, TiO2 memristor has been extensively studied by using various deposition methods. However, recently more researches have been done to explore the compatibility of other transition metal oxide, TMO such as zinc oxide, ZnO to be used as the active layer of the memristor. This paper highlights the simple and easy-control electrodeposition to deposit titanium, Ti and zinc, Zn thin film at room temperature and subsequent thermal oxidation at 600 °C. Gold, Au was then sputtered as top electrode to create metal-insulator-metal, MIM sandwich of Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors. The structural, morphological and memristive properties were characterized using Field Emission Scanning Electron Microscopy, FESEM, X-Ray Diffraction, XRD and current-voltage, I-V measurement. Both Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristivity were identified by the pinched hysteresis loop with resistive ratio of 1.2 and 1.08 respectively. Empirical study on diffusivity of Ti4+, Zn2+ and O2‑ ions in both metal oxides show that the metal vacancies were formed, thus giving rise to its memristivity. The electrodeposited Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors demonstrate comparable performances to previous studies using other methods.

The role of Sb in solar cell material Cu 2ZnSnS 4

DOE PAGES

Zhang, Xiaoli; Han, Miaomiao; Zeng, Zhi; ...

2017-03-03

In this paper, based on first-principles calculations we report a possible mechanism of the efficiency improvement of the Sb-doped Cu 2ZnSnS 4 (CZTS) solar cells from the Sb-related defect point of view. Different from Sb in CuInSe 2 which substituted the Cu atomic site and acted as group-13 elements on the Cu-poor growth condition, we find out that Sb prefers to substitute Sn atomic site and acts as group-14 elements on the Cu-poor growth condition in CZTS. At low Sb concentration, Sb Sn produces a deep defect level which is detrimental for the solar cell application. At high Sb concentration,more » Sb 5s states form an isolated half-filled intermediate band at 0.5 eV above the valence band maximum which will increase the photocurrent as well as the solar cell efficiency.« less

Electrodeposition and Characterization of Mn-Cu-Zn Alloys for Corrosion Protection Coating

NASA Astrophysics Data System (ADS)

Tsurtsumia, Gigla; Gogoli, David; Koiava, Nana; Kakhniashvili, Izolda; Jokhadze, Nunu; Lezhava, Tinatin; Nioradze, Nikoloz; Tatishvili, Dimitri

2017-12-01

Mn-Cu-Zn alloys were electrodeposited from sulphate bath, containing citrate or EDTA and their mixtures as complexing ligands. The influence of bath composition and deposition parameters on alloys composition, cathodic current efficiency and structural and electrochemical properties were studied. At a higher current density (≥ 37.5 A dm-2) a uniform surface deposit of Mn-Cu-Zn was obtained. Optimal pH of electrolyte (0.3 mol/dm3Mn2+ + 0.6 mol/dm3 (NH4)2SO4 +0.1 mol/dm3Zn2++0.005 mol/dm3 Cu2++ 0.05mol/dm3Na3Cit + 0.15mol/dm3 EDTA; t=300C; τ=20 min) for silvery, nonporous coating of Mn-Cu-Zn alloy was within 6.5-7.5; coating composition: 71-83% Mn, 6-7.8% Cu, 11.5-20% Zn, current efficiency up to 40%. XRD patterns revealed BCT (body centred tetragonal) γ-Mn solid phase solution (lattice constants a=2.68 Å c=3.59 Å). Corrosion measurements of deposited alloys were performed in aerated 3.5% NaCl solution. The corrosion current density (icorr) of the electrodeposited alloys on carbon steel was 10 times lower than corrosion rate of pure zinc and manganese coatings. Triple alloy coatings corrosion potential (Ecorr = -1140 mV vs. Ag/AgCl) preserved negative potential value longer (more than three months) compared to carbon steel substrate (Ecorr = -670 mV vs. Ag/AgCl). Tafel polarization curves taken on Mn-Cu-Zn alloy coating in aerated 3.5% NaCl solution did not show a typical passivation behaviour which can be explained by formation oflow solubility of adherent corrosion products on the alloy surface. Corrosion test of Mn-Cu-Zn electrocoating in chlorine environment shows that it is the best cathodic protective coating for a steel product.

Cu,Zn superoxide dismutase: cloning and analysis of the Taenia solium gene and Taenia crassiceps cDNA.

PubMed

Parra-Unda, Ricardo; Vaca-Paniagua, Felipe; Jiménez, Lucia; Landa, Abraham

2012-01-01

Cytosolic Cu,Zn superoxide dismutase (Cu,Zn-SOD) catalyzes the dismutation of superoxide (O(2)(-)) to oxygen and hydrogen peroxide (H(2)O(2)) and plays an important role in the establishment and survival of helminthes in their hosts. In this work, we describe the Taenia solium Cu,Zn-SOD gene (TsCu,Zn-SOD) and a Taenia crassiceps (TcCu,Zn-SOD) cDNA. TsCu,Zn-SOD gene that spans 2.841 kb, and has three exons and two introns; the splicing junctions follow the GT-AG rule. Analysis in silico of the gene revealed that the 5'-flanking region has three putative TATA and CCAAT boxes, and transcription factor binding sites for NF1 and AP1. The transcription start site was a C, located at 22 nucleotides upstream of the translation start codon (ATG). Southern blot analysis showed that TcCu,Zn-SOD and TsCu,Zn-SOD genes are encoded by a single copy. The deduced amino acid sequences of TsCu,Zn-SOD gene and TcCu,Zn-SOD cDNA reveal 98.47% of identity, and the characteristic motives, including the catalytic site and β-barrel structure of the Cu,Zn-SOD. Proteomic and immunohistochemical analysis indicated that Cu,Zn-SOD does not have isoforms, is distributed throughout the bladder wall and is concentrated in the tegument of T. solium and T. crassiceps cysticerci. Expression analysis revealed that TcCu,Zn-SOD mRNA and protein expression levels do not change in cysticerci, even upon exposure to O(2)(-) (0-3.8 nmol/min) and H(2)O(2) (0-2mM), suggesting that this gene is constitutively expressed in these parasites. Published by Elsevier Inc.

Energy Scaling of Nanosecond Gain-Switched Cr2+:ZnSe Lasers

DTIC Science & Technology

2011-01-01

outcoupler or absorption from the lightly-doped active ions. Additionally, the edges of the crystals are cut at the Brewster angle , which raises...experiments we used Brewster cut Cr:ZnSe gain elements with a chromium concentration of 8x1018 cm-3. Under Cr:Tm:Ho:YAG pumping, the first Cr:ZnSe laser...the energy scaling of nanosecond gain-switched Cr:ZnSe lasers is optimization of the gain medium. In this study we used Brewster cut Cr:ZnSe gain

Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se2 Solar Cell with CBD-ZnS Buffer Layer.

PubMed

Lee, Woo-Jung; Yu, Hye-Jung; Wi, Jae-Hyung; Cho, Dae-Hyung; Han, Won Seok; Yoo, Jisu; Yi, Yeonjin; Song, Jung-Hoon; Chung, Yong-Duck

2016-08-31

We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

Solar Absorber Cu 2 ZnSnS 4 and its Parent Multilayers ZnS/SnS 2 /Cu 2 S Synthesized by Atomic Layer Deposition and Analyzed by X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baryshev, Sergey V.; Riha, Shannon C.; Zinovev, Alexander V.

2015-06-01

Presented here are results of x-ray photoelectron spectroscopy (XPS) on multilayers of metal-sulfide binaries ZnS, SnS2, and Cu2S grown by atomic layer deposition (ALD) on Si substrates, and of Cu2ZnSnS4 (CZTS) formed upon 450 °C annealing of the parent multilayer ZnS/SnS2/Cu2S. Survey and detailed spectral analysis of the multilayer ZnS/SnS2/Cu2S are presented step-wise, as each layer was sequentially added by ALD. The set of data is finalized with spectra of the resulting alloy CZTS. XPS analyses indicate significant mixing between SnS2 and Cu2S, which favors CZTS formation within the ALD approach.

EXAFS analysis of a human Cu,Zn SOD isoform focused using non-denaturing gel electrophoresis

NASA Astrophysics Data System (ADS)

Chevreux, Sylviane; Solari, Pier Lorenzo; Roudeau, Stéphane; Deves, Guillaume; Alliot, Isabelle; Testemale, Denis; Hazemann, Jean Louis; Ortega, Richard

2009-11-01

Isoelectric point isoforms of a metalloprotein, copper-zinc superoxide dismutase (CuZnSOD), separated on electrophoresis gels were analyzed using X-ray Absorption Spectroscopy. Mutations of this protein are involved in familial cases of amyotrophic lateral sclerosis. The toxicity of mutants could be relied to defects in the metallation state. Our purpose is to establish analytical protocols to study metallation state of protein isoforms such as those from CuZnSOD. We previously highlighted differences in the copper oxidation state between CuZnSOD isoforms using XANES. Here, we present the first results for EXAFS analyses performed at Cu and Zn K-edge on the majoritary expressed isoform of human CuZnSOD separated on electrophoresis gels.

Towards Stable CuZnAl Slurry Catalysts for the Synthesis of Ethanol from Syngas

NASA Astrophysics Data System (ADS)

Dong, Weibing; Gao, Zhihua; Zhang, Qian; Huang, Wei

2018-07-01

A stable CuZnAl slurry catalyst for the synthesis of ethanol from syngas has been developed by adjusting the heat treatment conditions of the complete liquid-phase method. The activity evaluation results showed that the CuZnAl catalyst, when heat-treated under a high pressure and temperature, was a stable catalyst for the synthesis of ethanol. The selectivity of ethanol using the CuZnAl slurry catalyst, which was heat-treated at 553 K under 4.0 MPa, increased continuously with time and was stable at approximately 26.00% after 144 h. The characterization results indicated that the CuZnAl slurry catalyst heat-treated under high pressure conditions could facilitate the formation of a more perfect structure with a larger specific surface area. The prepared catalyst contained a balance of strong and weak acid sites, an appropriate form of Cu2O and a high Cu/Zn atomic ratio at the catalyst surface, providing its stability in ethanol synthesis from syngas.

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent

NASA Astrophysics Data System (ADS)

Nakamura, Hiroshi; Aoki, Masaharu

1981-01-01

Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700-800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (˜1 μm) and smooth, had low, uniform Te concentrations (˜0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10-30 μm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS1-xSex were also grown on ZnS substrates.

Effect of Cu-Dopant on the Structural, Magnetic and Electrical Properties of ZnO

NASA Astrophysics Data System (ADS)

Aryanto, D.; Kurniawan, C.; Subhan, A.; Sudiro, T.; Sebayang, P.; Ginting, M.; Siregar, S. M. K.; Nasruddin, M. N.

2017-05-01

Zn1- x Cu x O (x = 0, 2, 3, and 4 at.%) was synthesized by using solid-state reaction technique. The ZnO and CuO powders were mixed and then milled by using high-speed shaker mill. The influence of Cu dopants on the structure, magnetic, and electrical properties was investigated by using XRD, VSM, and I-V and C-V measurements. The XRD analysis showed that the Zn1- x Cu x O had hexagonal wurtzite polycrystalline. The diffraction intensity decreased and the peak position shifted directly to a higher 2θ angle with increasing the dopant concentration. Furthermore, the lattice parameters decreased when the ZnO was doped with x = 0.04, which indicated that the crystal structure changed. The increase of Cu dopants was believed to affect the magnetic and electrical properties of ZnO.

Adsorption of multi-heavy metals Zn and Cu onto surficial sediments: modeling and adsorption capacity analysis.

PubMed

Li, Shanshan; Zhang, Chen; Wang, Meng; Li, Yu

2014-01-01

Improved multiple regression adsorption models (IMRAMs) was developed to estimate the adsorption capacity of the components [Fe oxides (Fe), Mn oxides (Mn), organic materials (OMs), residuals] in surficial sediments for multi-heavy metal Zn and Cu. IMRAM is an improved version over MRAM, which introduces a computer program in the model developing process. As MRAM, Zn(Cu) IMRAM, and Cu(Zn) IMRAM again confirmed that there is significant interaction effects that control the adsorption of compounded Zn and Cu, which was neglected by additional adsorption model. The verification experiment shows that the relative deviation of the IMRAMs is less than 13%. It is revealed by the IMRAMs that Mn, which has the greatest adsorption capability for compounded Zn and Cu (54.889 and 161.180 mg/l, respectively), follows by interference adsorption capacity of Fe/Mn (-1.072 and -24.591 mg/l respectively). Zn and Cu influence each other through different mechanisms. When Zn is the adsorbate, compounded Cu mainly affects the adsorption capacities of Fe/Mn and Fe/Mn/OMs; while when Cu is the adsorbate, compounded Zn mainly exerts its effect on Mn, Fe/Mn, and Mn/OMs. It also shows that the compounded Zn or Cu weakened the interference adsorption of Fe/Mn, and meanwhile, strengthened the interference adsorption of Mn/OMs.

Obtaining Large Columnar CdTe Grains and Long Lifetime on CdSe, MgZnO, or CdS Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amarasinghe, Mahisha; Colegrove, Eric M; Moseley, John

CdTe solar cells have reached efficiencies comparable to multicrystalline silicon and produce electricity at costs competitive with traditional energy sources. Recent efficiency gains have come partly from shifting from the traditional CdS window layer to new materials such as CdSe and MgZnO, yet substantial headroom still exists to improve performance. Thin film technologies including Cu(In,Ga)Se2, perovskites, Cu2ZnSn(S,Se)4, and CdTe inherently have many grain boundaries that can form recombination centers and impede carrier transport; however, grain boundary engineering has been difficult and not practical. In this work, it is demonstrated that wide columnar grains reaching through the entire CdTe layer canmore » be achieved by aggressive postdeposition CdTe recrystallization. This reduces the grain structure constraints imposed by nucleation on nanocrystalline window layers and enables diverse window layers to be selected for other properties critical for electro-optical applications. Computational simulations indicate that increasing grain size from 1 to 7 um can be equivalent to decreasing grain-boundary recombination velocity by three orders of magnitude. Here, large high-quality grains enable CdTe lifetimes exceeding 50 ns.« less

Deposition and characterization of ZnSe nanocrystalline thin films

NASA Astrophysics Data System (ADS)

Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

2018-02-01

ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

Bandgap Engineering of Cu(In 1-xGax)Se 2 Absorber Layers Fabricated using CuInSe 2 and CuGaSe 2 Targets for One-Step Sputtering Process

DOE PAGES

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

2016-10-17

Here we have demonstrated that the bandgap of Cu(In 1-xGa x)Se 2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe 2(CIS) and CuGaSe 2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyritemore » phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

Electron paramagnetic resonance in Cu-doped ZnO

NASA Astrophysics Data System (ADS)

Buchheit, R.; Acosta-Humánez, F.; Almanza, O.

2016-04-01

In this work, ZnO and Cu-doped ZnO nanoparticles (Zn1-xCuxO, x = 3%), with a calcination temperature of 500∘C were synthesized using the sol-gel method. The particles were analyzed using atomic absorption spectroscopy (AAS), X-ray diffraction (XRD) and electron paramagnetic resonance (EPR) at X-band, measurement in a temperature range from 90 K to room temperature. AAS confirmed a good correspondence between the experimental doping concentration and the theoretical value. XRD reveals the presence of ZnO phase in hexagonal wurtzite structure and a nanoparticle size for the samples synthesized. EPR spectroscopy shows the presence of point defects in both samples with g-values of g = 1.959 for shallow donors and g = 2.004 for ionized vacancies. It is important when these materials are required have been used as catalysts, as suggested that it is not necessary prepare them at higher temperature. A simulation of the Cu EPR signal using an anisotropic spin Hamiltonian was performed and showed good coincidence with the experimental spectra. It was shown that Cu2+ ions enter interstitial octahedral sites of orthorhombic symmetry in the wurtzite crystal structure. Temperature dependence of the EPR linewidth and signal intensity shows a paramagnetic behavior of the sample in the measurement range. A Néel temperature TN = 78 ± 19 K was determined.

Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se{sub 2} thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Lytvynenko, V. Yu.; Maslyanchuk, O. L.

2016-04-15

Optical and recombination losses in a Cu(In,Ga)Se{sub 2} thin-film solar cell with a band gap of 1.36–1.38 eV are theoretically analyzed. The optical transmittance of the ZnO and CdS layers through which the radiation penetrates into the absorbing layer is determined. Using optical constants, the optical loss caused by reflection at the interfaces (7.5%) and absorption in the ZnO and CdS layers (10.2%) are found. To calculate the recombination loss, the spectral distribution of the quantum efficiency of CdS/CuIn{sub 1–x}Ga{sub x}Se{sub 2} is investigated. It is demonstrated that, taking the drift and diffusion components of recombination at the front andmore » rear surfaces of the absorber into account, the quantum efficiency spectra of the investigated solar cell can be analytically described in detail. The real parameters of the solar cell are determined by comparing the calculated results and experimental data. In addition, the losses caused by the recombination of photogenerated carriers at the front and rear surfaces of the absorbing layer (1.8% and <0.1%, respectively), at its neutral part (7.6%), and in the space-charge region of the p–n heterojunction (1.0%) are determined. A correction to the parameters of Cu(In,Ga)Se{sub 2} is proposed, which enhances the charge-accumulation efficiency.« less

In situ formation of a ZnO/ZnSe nanonail array as a photoelectrode for enhanced photoelectrochemical water oxidation performance

NASA Astrophysics Data System (ADS)

Wang, Liyang; Tian, Guohui; Chen, Yajie; Xiao, Yuting; Fu, Honggang

2016-04-01

In this study, a ZnO/ZnSe nanonail array was prepared via a two-step sequential hydrothermal synthetic route. In this synthetic process, the ZnO nanorod array was first grown on a fluorine-doped tin oxide (FTO) substrate using a seed-mediated growth approach via the hydrothermal process. Then, the ZnO nanonail array was obtained via in situ growth of ZnSe nano caps onto the ZnO nanorod array via a hydrothermal process in the presence of a Se source. The surface morphology and amount of ZnSe grown on the surface of the ZnO nanorods can be regulated by varying the reaction time and reactant concentration. Compared with pure ZnO nanorods, this unique nanonail array heterostructure exhibits enhanced visible light absorption. The transient photocurrent condition, in combination with steady-state and time-resolved photoluminescence spectroscopy, reveals that the ZnO/ZnSe nanonail array electrode has the highest charge separation rate, highest electron injection efficiency, and highest chemical stability. The photocurrent density of the ZnO/ZnSe nanonail array heterostructure reaches 1.01 mA cm-2 at an applied potential of 0.1 V (vs. Ag/AgCl), which is much higher than that of the ZnO/ZnSe nanorod array (0.71 mA cm-2), the pristine ZnO nanorod array (0.39 mA cm-2), and the ZnSe electrode (0.21 mA cm-2), indicating its significant visible light driven activities for photoelectrochemical water oxidation. This unique morphology of nail-capped nanorods might be important for providing better insight into the correlation between heterostructure and photoelectrochemical activity.In this study, a ZnO/ZnSe nanonail array was prepared via a two-step sequential hydrothermal synthetic route. In this synthetic process, the ZnO nanorod array was first grown on a fluorine-doped tin oxide (FTO) substrate using a seed-mediated growth approach via the hydrothermal process. Then, the ZnO nanonail array was obtained via in situ growth of ZnSe nano caps onto the ZnO nanorod array via a

A facile green antisolvent approach to Cu2+-doped ZnO nanocrystals with visible-light-responsive photoactivities.

PubMed

Lu, Yi-Hsuan; Lin, Wei-Hao; Yang, Chao-Yao; Chiu, Yi-Hsuan; Pu, Ying-Chih; Lee, Min-Han; Tseng, Yuan-Chieh; Hsu, Yung-Jung

2014-08-07

An environmentally benign antisolvent method has been developed to prepare Cu(2+)-doped ZnO nanocrystals with controllable dopant concentrations. A room temperature ionic liquid, known as a deep eutectic solvent (DES), was used as the solvent to dissolve ZnO powders. Upon the introduction of the ZnO-containing DES into a bad solvent which shows no solvation to ZnO, ZnO was precipitated and grown due to the dramatic decrease of solubility. By adding Cu(2+) ions to the bad solvent, the growth of ZnO from the antisolvent process was accompanied by Cu(2+) introduction, resulting in the formation of Cu(2+)-doped ZnO nanocrystals. The as-prepared Cu(2+)-doped ZnO showed an additional absorption band in the visible range (400-800 nm), which conduced to an improvement in the overall photon harvesting efficiency. Time-resolved photoluminescence spectra, together with the photovoltage information, suggested that the doped Cu(2+) may otherwise trap photoexcited electrons during the charge transfer process, inevitably depressing the photoconversion efficiency. The photoactivity of Cu(2+)-doped ZnO nanocrystals for photoelectrochemical water oxidation was effectively enhanced in the visible region, which achieved the highest at 2.0 at% of Cu(2+). A further increase in the Cu(2+) concentration however led to a decrease in the photocatalytic performance, which was ascribed to the significant carrier trapping caused by the increased states given by excessive Cu(2+). The photocurrent action spectra illustrated that the enhanced photoactivity of the Cu(2+)-doped ZnO nanocrystals was mainly due to the improved visible photon harvesting achieved by Cu(2+) doping. These results may facilitate the use of transition metal ion-doped ZnO in other photoconversion applications, such as ZnO based dye-sensitized solar cells and magnetism-assisted photocatalytic systems.

Complete transformation of ZnO and CuO nanoparticles in culture medium and lymphocyte cells during toxicity testing.

PubMed

Ivask, Angela; Scheckel, Kirk G; Kapruwan, Pankaj; Stone, Vicki; Yin, Hong; Voelcker, Nicolas H; Lombi, Enzo

2017-03-01

Here, we present evidence on complete transformation of ZnO and CuO nanoparticles, which are among the most heavily studied metal oxide particles, during 24 h in vitro toxicological testing with human T-lymphocytes. Synchrotron radiation-based X-ray absorption near edge structure (XANES) spectroscopy results revealed that Zn speciation profiles of 30 nm and 80 nm ZnO nanoparticles, and ZnSO 4 - exposed cells were almost identical with the prevailing species being Zn-cysteine. This suggests that ZnO nanoparticles are rapidly transformed during a standard in vitro toxicological assay, and are sequestered intracellularly, analogously to soluble Zn. Complete transformation of ZnO in the test conditions was further supported by almost identical Zn spectra in medium to which ZnO nanoparticles or ZnSO 4 was added. Likewise, Cu XANES spectra for CuO and CuSO 4 -exposed cells and cell culture media were similar. These results together with our observation on similar toxicological profiles of ZnO and soluble Zn, and CuO and soluble Cu, underline the importance of dissolution and subsequent transformation of ZnO and CuO nanoparticles during toxicological testing and provide evidence that the nano-specific effect of ZnO and CuO nanoparticles is negligible in this system. We strongly suggest to account for this aspect when interpreting the toxicological results of ZnO and CuO nanoparticles.

Cu0-loaded SBA-15@ZnO with improved electrical properties and affinity towards hydrogen

NASA Astrophysics Data System (ADS)

Bouazizi, N.; Louhichi, S.; Ouargli, R.; Bargougui, R.; Vieillard, J.; Derf, F. Le; Azzouz, A.

2017-05-01

A core-shell material was prepared using SBA-15 crystallites as cores for the growth of a ZnO shell, followed by Cu0 dispersion. The resulting Cu/SBA-15@ZnO nanostructure displayed higher specific surface area (SSA) and higher number of smaller pores as compared to the starting materials. Dispersion of fine Cu0NPs induced a compaction of the host matrice and a marked decay of the hydrophilic character, explained in terms of the involvement of terminal hydroxyl groups in competitive sbnd HO:Cu interaction at the expense of H-bridges with water. Heating at 400-450 °C seems to trigger ZnO dehydroxylation with possible self-polycondensation and/or the formation of Si-O-Zn bridges. This is an additional explanation of the significant SSA increase and decrease in the average pore diameter. Both ZnO and Cu0NP incorporation induced shifts in the UV-vis absorption band towards higher wavelengths, indicating a decrease in the optical band gap energy and an improvement of the conductance properties. As compared to ZnO, Cu0NPs produced stronger improvement of the conductance, which was found to increase with higher frequencies. Cu/SBA-15@ZnO also displayed higher affinity towards hydrogen as compared to SBA-15@ZnO and SBA-15 at ambient conditions. These outstanding properties combined to an appreciable thermal stability are worth to be prone to deeper investigations, because they can open promising prospects for Cu/SBA-15@ZnO as sensor, electrode material, electrocatalyst and/or hydrogen capture matrice.

Selenization of Cu2ZnSnS4 Enhanced the Performance of Dye-Sensitized Solar Cells: Improved Zinc-Site Catalytic Activity for I3.

PubMed

Wang, Xiuwen; Xie, Ying; Bateer, Buhe; Pan, Kai; Jiao, Yanqing; Xiong, Ni; Wang, Song; Fu, Honggang

2017-11-01

Cu 2 ZnSnS 4 (CZTS) and Cu 2 ZnSn(S,Se) 4 (CZTSSe) as promising photovoltaic materials have drawn much attention because they are environmentally benign and earth-abundant elements. In this work, the monodispersed, low-cost Cu 2 ZnSnS 4 nanocrystals with small size have been controllably synthesized via a wet chemical routine. And CZTSSe could be easily prepared after selenization of CZTS. When they are employed as counter electrodes (CEs) for dye-sensitized solar cells (DSSCs), the power conversion efficiency (PCE) has been improved from 3.54% to 7.13% as CZTS is converted to CZTSSe, which is also compared to that of Pt (7.62%). The exact reason for the enhanced catalytic activity of I 3 - is discussed with the work function and density functional theory (DFT) when CZTSSe converted from CZTS. The results of a Kelvin probe suggest that the work function of CZTSSe (5.61 eV) is closer to that of Pt (5.65 eV) and higher than that of CZTS, which matched the redox shuttle potential better. According to the theory calculation, all the atomic and bond populations changed significantly when Se replaced partly the S on the CZTS system, especially in the Zn site. During the catalytic process as CEs, the adsorption energy obviously increased compared to those at other sites when I 3 - adsorbed on the Zn site in CZTSSe. So, Zn plays an important role for the reduction of I 3 - after CZTS is converted to CZTSSe. Based on above analysis, the reason for enhanced performance of DSSCs when CZTS converted to CZTSSe is mainly due to the enhancement of Zn-site activity. This work is beneficial for understanding the catalytic reaction mechanism of CZTS(Se) as CEs of DSSCs.

Atomistic models of Cu diffusion in CuInSe2 under variations in composition

NASA Astrophysics Data System (ADS)

Sommer, David E.; Dunham, Scott T.

2018-03-01

We construct an analytic model for the composition dependence of the vacancy-mediated Cu diffusion coefficient in undoped CuInSe2 using parameters from density functional theory. The applicability of this model is supported numerically with kinetic lattice Monte Carlo and Onsager transport tensors. We discuss how this model relates to experimental measurements of Cu diffusion, arguing that our results can account for significant contributions to the bulk diffusion of Cu tracers in non-stoichiometric CuInSe2.

Microstructure and properties of Cu-Sn-Zn-TiO 2 nano-composite coatings on mild steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Weidong; Cao, Di; Jin, Yunxue

Cu-Sn-Zn coatings have been widely used in industry for their unique properties, such as good conductivity, high corrosion resistance and excellent solderability. To further improve the mechanical performance of Cu-Sn-Zn coatings, powder-enhanced method was applied and Cu-Sn-Zn-TiO 2 nano-composite coatings with different TiO 2 concentration were fabricated. The microstructure of Cu-Sn-Zn-TiO 2 nano-composite coatings were investigated by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The mechanical properties of coatings including microhardness and wear resistance were studied. The results indicate that the incorporation of TiO 2 nanoparticle can significantly influence the properties of Cu-Sn-Zn coatings. The microhardness of Cu-Sn-Zn coatingmore » was increased to 383 HV from 330 HV with 1 g/L TiO 2 addition. Also, the corrosion resistance of coating was enhanced. The effects of TiO 2 nanoparticle concentration on the microstructure, mechanical properties and corrosion resistance of Cu-Sn-Zn-TiO 2 nano-composite coatings were discussed.« less

Microstructure and properties of Cu-Sn-Zn-TiO 2 nano-composite coatings on mild steel

DOE PAGES

Gao, Weidong; Cao, Di; Jin, Yunxue; ...

2018-04-18

Cu-Sn-Zn coatings have been widely used in industry for their unique properties, such as good conductivity, high corrosion resistance and excellent solderability. To further improve the mechanical performance of Cu-Sn-Zn coatings, powder-enhanced method was applied and Cu-Sn-Zn-TiO 2 nano-composite coatings with different TiO 2 concentration were fabricated. The microstructure of Cu-Sn-Zn-TiO 2 nano-composite coatings were investigated by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The mechanical properties of coatings including microhardness and wear resistance were studied. The results indicate that the incorporation of TiO 2 nanoparticle can significantly influence the properties of Cu-Sn-Zn coatings. The microhardness of Cu-Sn-Zn coatingmore » was increased to 383 HV from 330 HV with 1 g/L TiO 2 addition. Also, the corrosion resistance of coating was enhanced. The effects of TiO 2 nanoparticle concentration on the microstructure, mechanical properties and corrosion resistance of Cu-Sn-Zn-TiO 2 nano-composite coatings were discussed.« less

Visible light-driven photocatalytic H{sub 2}-generation activity of CuS/ZnS composite particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Liang; Chen, Hua; Huang, Jianhua, E-mail: jhhuang@zstu.edu.cn

2015-04-15

Highlights: • Preparation of CuS/ZnS composite photocatalyst by cation-exchange reaction. • Visible light photocatalytic activity for H{sub 2} evolution without cocatalyst. • The H{sub 2}-evolution rate from water splitting depends on the CuS content. • The highest rate of H{sub 2} evolution is obtained with CuS (0.5 mol%)/ZnS composite. - Abstract: CuS/ZnS composite particles with diameter of 200–400 nm were successfully prepared by a simple cation-exchange reaction using ZnS spheres as a precursor. CuS nanoparticles with a few nanometers in diameter were observed on the surface of composite particles. The synthesized CuS/ZnS composite particles showed photocatalytic property effective for H{submore » 2} evolution from an aqueous Na{sub 2}S and Na{sub 2}SO{sub 3} solution under visible light irradiation without any cocatalysts. The rate of H{sub 2} generation was found to be strongly dependent on the CuS content. The highest rate of H{sub 2} evolution reached 695.7 μmol h{sup −1} g{sup −1}, which was almost 7 times as high as that of the mechanical mixture of CuS and ZnS. The enhancement in the photocatalytic activity of CuS/ZnS composite particles is supposed to be due to the direct interfacial charge transfer of the CuS/ZnS heterojunction.« less

ZnO/Cu nanocomposite: a platform for direct electrochemistry of enzymes and biosensing applications.

PubMed

Yang, Chi; Xu, Chunxiang; Wang, Xuemei

2012-03-06

Unique structured nanomaterials can facilitate the direct electron transfer between redox proteins and the electrodes. Here, in situ directed growth on an electrode of a ZnO/Cu nanocomposite was prepared by a simple corrosion approach, which enables robust mechanical adhesion and electrical contact between the nanostructured ZnO and the electrodes. This is great help to realize the direct electron transfer between the electrode surface and the redox protein. SEM images demonstrate that the morphology of the ZnO/Cu nanocomposite has a large specific surface area, which is favorable to immobilize the biomolecules and construct biosensors. Using glucose oxidase (GOx) as a model, this ZnO/Cu nanocomposite is employed for immobilization of GOx and the construction of the glucose biosensor. Direct electron transfer of GOx is achieved at ZnO/Cu nanocomposite with a high heterogeneous electron transfer rate constant of 0.67 ± 0.06 s(-1). Such ZnO/Cu nanocomposite provides a good matrix for direct electrochemistry of enzymes and mediator-free enzymatic biosensors.

Synthesis of ZnO/CuO and TiO{sub 2}/CuO nanocomposites for light and ultrasound assisted degradation of a textile dye in aqueous solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzakki, Afifah; Shabrany, Hesni; Saleh, Rosari, E-mail: rosari.saleh@gmail.com, E-mail: rosari.saleh@ui.ac.id

2016-04-19

ZnO/CuO and TiO2/CuO nanocomposites with different Zn/Cu and Ti/Cu ratios were prepared using sol-gel method. The obtained composite samples were used as catalyst. Methylene blue was used as a model of textile dye to evaluate their photocatalytic, sonocatalytic and photosonocatalytic activities. X-ray diffraction and energy dispersive X- ray analysis confirmed that only monoclinic CuO and hexagonal wurtzite ZnO structures are present in ZnO/CuO nanocomposites, while in TiO2/CuO nanocomposites monoclinic CuO and anatase TiO2 structures were observed. The degradation of methylene blue indicated that the incorporation of CuO in ZnO/CuO and TiO2/CuO nanocomposites exhibited an appreciable higher photocatalytic activity, which wasmore » mainly attributed to the extended photoresponding range and more light energy could be utilized than pure ZnO and TiO2.« less

Effects of Cu(2+) and Zn(2+) on growth and physiological characteristics of green algae, Cladophora.

PubMed

Cao, De-ju; Xie, Pan-pan; Deng, Juan-wei; Zhang, Hui-min; Ma, Ru-xiao; Liu, Cheng; Liu, Ren-jing; Liang, Yue-gan; Li, Hao; Shi, Xiao-dong

2015-11-01

Effects of various concentrations of Cu(2+) and Zn(2+) (0.0, 0.1, 0.25, 0.5, or 1.0 mg/L) on the growth, malondialdehyde (MDA), the intracellular calcium, and physiological characteristics of green algae, Cladophora, were investigated. Low Zn(2+) concentrations accelerated the growth of Cladophora, whereas Zn(2+) concentration increases to 0.25 mg/L inhibited its growth. Cu(2+) greatly influences Cladophora growth. The photosynthesis of Cladophora decreased under Zn(2+) and Cu(2+) stress. Cu(2+) and Zn(2+) treatment affected the content of total soluble sugar in Cladophora and has small increases in its protein content. Zn(2+) induced the intracellular calcium release, and copper induced the intracellular calcium increases in Cladophora. Exposure to Cu(2+) and Zn(2+) induces MDA in Cladophora. The stress concent of Cu(2+) was strictly correlated with the total soluble sugar content, Chla+Chlb, and MDA in Cladophora, and the stress concent of Zn(2+) was strictly correlated with the relative growth rate (RGR) and MDA of Cladophora.

Copper doping of ZnO crystals by transmutation of 64Zn to 65Cu: An electron paramagnetic resonance and gamma spectroscopy study

NASA Astrophysics Data System (ADS)

Recker, M. C.; McClory, J. W.; Holston, M. S.; Golden, E. M.; Giles, N. C.; Halliburton, L. E.

2014-06-01

Transmutation of 64Zn to 65Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the 65Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of 64Zn nuclei to 65Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu2+ ions (where 63Cu and 65Cu hyperfine lines are easily resolved). A spectrum from isolated Cu2+ (3d9) ions acquired after the neutron irradiation showed only hyperfine lines from 65Cu nuclei. The absence of 63Cu lines in this Cu2+ spectrum left no doubt that the observed 65Cu signals were due to transmuted 65Cu nuclei created as a result of the neutron irradiation. Small concentrations of copper, in the form of Cu+-H complexes, were inadvertently present in our as-grown ZnO crystal. These Cu+-H complexes are not affected by the neutron irradiation, but they dissociate when a crystal is heated to 900 °C. This behavior allowed EPR to distinguish between the copper initially in the crystal and the copper subsequently produced by the neutron irradiation. In addition to transmutation, a second major effect of the neutron irradiation was the formation of zinc and oxygen vacancies by displacement. These vacancies were observed with EPR.

Molecular controls on Cu and Zn isotopic fractionation in Fe-Mn crusts

NASA Astrophysics Data System (ADS)

Little, S. H.; Sherman, D. M.; Vance, D.; Hein, J. R.

2014-06-01

The isotopic systems of the transition metals are increasingly being developed as oceanic tracers, due to their tendency to be fractionated by biological and/or redox-related processes. However, for many of these promising isotope systems the molecular level controls on their isotopic fractionations are only just beginning to be explored. Here we investigate the relative roles of abiotic and biotic fractionation processes in controlling modern seawater Cu and Zn isotopic compositions. Scavenging to Fe-Mn oxides represents the principal output for Cu and Zn to sediments deposited under normal marine (oxic) conditions. Using Fe-Mn crusts as an analogue for these dispersed phases, we investigate the phase association and crystal chemistry of Cu and Zn in such sediments. We present the results of an EXAFS study that demonstrate unequivocally that Cu and Zn are predominantly associated with the birnessite (δ-MnO2) phase in Fe-Mn crusts, as previously predicted from sequential leaching experiments (e.g., Koschinsky and Hein, 2003). The crystal chemistry of Cu and Zn in the crusts implies a reduction in coordination number in the sorbed phase relative to the free metal ion in seawater. Thus, theory would predict equilibrium fractionations that enrich the heavy isotope in the sorbed phase (e.g., Schauble, 2004). In natural samples, Fe-Mn crusts and nodules are indeed isotopically heavy in Zn isotopes (at ∼1‰) compared to deep seawater (at ∼0.5‰), consistent with the predicted direction of equilibrium isotopic fractionation based on our observations of the coordination environment of sorbed Zn. Further, ∼50% of inorganic Zn‧ is chloro-complexed (the other ∼50% is present as the free Zn2+ ion), and complexation by Cl- is also predicted to favour equilibrium partitioning of light Zn isotopes into the dissolved phase. The heavy Zn isotopic composition of Fe-Mn crusts and nodules relative to seawater can therefore be explained by an inorganic fractionation during

Toxicity of nanoparticles of CuO, ZnO and TiO2 to microalgae Pseudokirchneriella subcapitata.

PubMed

Aruoja, Villem; Dubourguier, Henri-Charles; Kasemets, Kaja; Kahru, Anne

2009-02-01

Toxicities of ZnO, TiO2 and CuO nanoparticles to Pseudokirchneriella subcapitata were determined using OECD 201 algal growth inhibition test taking in account potential shading of light. The results showed that the shading effect by nanoparticles was negligible. ZnO nanoparticles were most toxic followed by nano CuO and nano TiO2. The toxicities of bulk and nano ZnO particles were both similar to that of ZnSO4 (72 h EC50 approximately 0.04 mg Zn/l). Thus, in this low concentration range the toxicity was attributed solely to solubilized Zn2+ ions. Bulk TiO2 (EC50=35.9 mg Ti/l) and bulk CuO (EC50=11.55 mg Cu/l) were less toxic than their nano formulations (EC50=5.83 mg Ti/l and 0.71 mg Cu/l). NOEC (no-observed-effect-concentrations) that may be used for risk assessment purposes for bulk and nano ZnO did not differ (approximately 0.02 mg Zn/l). NOEC for nano CuO was 0.42 mg Cu/l and for bulk CuO 8.03 mg Cu/l. For nano TiO2 the NOEC was 0.98 mg Ti/l and for bulk TiO2 10.1 mg Ti/l. Nano TiO2 formed characteristic aggregates entrapping algal cells that may contribute to the toxic effect of nano TiO2 to algae. At 72 h EC50 values of nano CuO and CuO, 25% of copper from nano CuO was bioavailable and only 0.18% of copper from bulk CuO. Thus, according to recombinant bacterial and yeast Cu-sensors, copper from nano CuO was 141-fold more bioavailable than from bulk CuO. Also, toxic effects of Cu oxides to algae were due to bioavailable copper ions. To our knowledge, this is one of the first systematic studies on effects of metal oxide nanoparticles on algal growth and the first describing toxic effects of nano CuO towards algae.

Structural, morphological and optical properties of pulsed laser deposited ZnSe/ZnSeO3 thin films

NASA Astrophysics Data System (ADS)

Hassan, Syed Ali; Bashir, Shazia; Zehra, Khushboo; Salman Ahmed, Qazi

2018-04-01

The effect of varying laser pulses on structural, morphological and optical behavior of Pulsed Laser Deposited (PLD) ZnSe/ZnSeO3 thin films has been investigated. The films were grown by employing Excimer laser (100 mJ, 248 nm, 18 ns, 30 Hz) at various number of laser pulses i.e. 3000, 4000, 5000 and 6000 with elevated substrate temperature of 300 °C. One film was grown at Room Temperature (RT) by employing 3000 number of laser pulses. In order to investigate the structural analysis of deposited films, XRD analysis was performed. It was observed that the room temperature is not favorable for the growth of crystalline film. However, elevated substrate temperature to 300°C, two phases with preferred orientation of ZnSeO3 (2 1 2) and ZnSe (3 3 1) were identified. AFM and SEM analysis were performed to explore the surface morphology of grown films. Morphological analysis also confirmed the non-uniform film growth at room temperature. At elevated substrate temperature (300 °C), the growth of dendritic rods and cubical crystalline structures are observed for lower number of laser pulses i.e. 3000 and 4000 respectively. With increased number of pulses i.e. 5000 and 6000, the films surface morphology becomes smooth which is confirmed by measurement of surface RMS roughness. Number of grains, skewness, kurtosis and other parameters have been evaluated by statistical analysis. In order to investigate the thickness, and optical properties of deposited films, ellipsometery and UV–Vis spectroscopy techniques were employed. The estimated band gap energy is 2.67 eV for the film grown at RT, whereas band gap values varies from 2.80 eV to 3.01 eV for the films grown at 300 °C with increasing number of laser pulses.

Flexible Memristive Devices Based on InP/ZnSe/ZnS Core-Multishell Quantum Dot Nanocomposites.

PubMed

Kim, Do Hyeong; Wu, Chaoxing; Park, Dong Hyun; Kim, Woo Kyum; Seo, Hae Woon; Kim, Sang Wook; Kim, Tae Whan

2018-05-02

The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 10 2 and 8.5 × 10 3 , respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 10 4 s, and the number of endurance cycles was above 1 × 10 2 . The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.

Effects of annealing on the ferromagnetism and photoluminescence of Cu-doped ZnO nanowires.

PubMed

Xu, H J; Zhu, H C; Shan, X D; Liu, Y X; Gao, J Y; Zhang, X Z; Zhang, J M; Wang, P W; Hou, Y M; Yu, D P

2010-01-13

Room temperature ferromagnetic Cu-doped ZnO nanowires have been synthesized using the chemical vapor deposition method. By combining structural characterizations and comparative annealing experiments, it has been found that both extrinsic (CuO nanoparticles) and intrinsic (Zn(1-x)Cu(x)O nanowires) sources are responsible for the observed ferromagnetic ordering of the as-grown samples. As regards the former, annealing in Zn vapor led to a dramatic decrease of the ferromagnetism. For the latter, a reversible switching of the ferromagnetism was observed with sequential annealings in Zn vapor and oxygen ambience respectively, which agreed well with previous reports for Cu-doped ZnO films. In addition, we have for the first time observed low temperature photoluminescence changed with magnetic properties upon annealing in different conditions, which revealed the crucial role played by interstitial zinc in directly mediating high T(c) ferromagnetism and indirectly modulating the Cu-related structured green emission via different charge transfer transitions.

Extremely High Phosphate Sorption Capacity in Cu-Pb-Zn Mine Tailings.

PubMed

Huang, Longbin; Li, Xiaofang; Nguyen, Tuan A H

2015-01-01

Elevated inorganic phosphate (Pi) concentrations in pore water of amended tailings under direct revegetation may cause toxicity in some native woody species but not native forbs or herb species, all of which are key constituents in target native plant communities for phytostabilizing base metal mine tailings. As a result, Pi sorption capacity has been quantified by a conventional batch procedure in three types of base metal mine tailings sampled from two copper (Cu)-lead (Pb)-zinc (Zn) mines, as the basis for Pi-fertiliser addition. It was found that the Pi-sorption capacity in the tailings and local soil was extremely high, far higher than highly weathered agricultural soils in literature, but similar to those of volcanic ash soils. The Langmuir P-sorption maximum was up to 7.72, 4.12, 4.02 and 3.62 mg P g-1 tailings, in the fresh tailings of mixed Cu-Pb-Zn streams (MIMTD7), the weathered tailings of mixed Cu-Pb-Zn streams (MIMTD5), EHM-TD (fresh Cu-stream, high magnetite content) and local soil (weathered shale and schist), respectively. Physicochemical factors highly correlated with the high Pi-sorption in the tailings were fine particle distribution, oxalate and dithionite-citrate-bicarbonate extractable Fe (FeO and Fed), oxalate-extractable Al and Mn, and the levels of soluble Cd and Zn, and total S and Fe. Large amounts of amorphous Fe oxides and oxyhydroxides may have been formed from the oxidation of pyritic materials and redox cycles of Fe-minerals (such as pyrite (FeS2), ankerite (Ca(Fe Mg)(CO3)2 and siderite (FeCO3), as indicated by the extractable FeO values. The likely formation of sparingly soluble Zn-phosphate in the Pb-Zn tailings containing high levels of Zn (from sphalerite ((Zn,Fe)S, ZnS, (Zn,Cd)S)) may substantially lower soluble Zn levels in the tailings through high rates of Pi-fertiliser addition. As a result, the possibility of P-toxicity in native plant species caused by the addition of soluble phosphate fertilizers would be minimal.

Determination of Zn/Cu ratio and oligoelements in serum samples by total reflection X-ray fluorescence spectrometry for cancer diagnosis

NASA Astrophysics Data System (ADS)

Marcó P., L. M.; Jiménez, E.; Hernández C., E. A.; Rojas, A.; Greaves, E. D.

2001-11-01

The method of quantification using the Compton peak as an internal standard, developed in a previous work, was applied to the routine determination of Fe, Cu, Zn and Se in serum samples from normal individuals and cancer patients by total reflection X-ray fluorescence spectrometry. Samples were classified according to age and sex of the donor, in order to determine reference values for normal individuals. Results indicate that the Zn/Cu ratio and the Cu concentration could prove to be useful tools for cancer diagnosis. Significant differences in these parameters between the normal and cancer group were found for all age ranges. The multielemental character of the technique, coupled with the small amounts of sample required and the short analysis time make it a valuable tool in clinical analysis.

X-ray photoemission studies of Zn doped Cu 1- xTl xBa 2Ca 2Cu 3- yZn yO 10- δ ( y = 0, 2.65) superconductors

NASA Astrophysics Data System (ADS)

Khan, Nawazish A.; Mumtaz, M.; Ahadian, M. M.; Iraji-zad, Azam

2007-03-01

The X-ray photoemission (XPS) measurements of Cu 1- xTl xBa 2Ca 2Cu 3- yZn yO 10- δ ( y = 0, 2.65) superconductors have been performed and compared. These studies revealed that the charge state of thallium in the Cu 0.5Tl 0.5Ba 2O 4- δ charge reservoir layer in Zn doped samples is Tl 1+, while it is a mix of Tl 1+ and Tl 2+ in Zn free samples. The binding energy of Ba atoms in the Zn doped samples is shifted to higher energy, which when considered along with the presence of Tl 1+ suggested that it more efficiently directed the carriers to ZnO 2 and CuO 2 planes. The evidence of improved inter-plane coupling witnessed in X-ray diffraction is also confirmed by XPS measurements of Ca atoms in the Zn doped samples. The shift of the valance band spectrum in these Zn doped samples to higher energies suggested that the electrons at the top edge of the valance band were tied to a higher binding energy (relative to samples without Zn doping), which most likely resulted in a much lower energy state of the system in the superconducting state. The stronger superconducting state arising out of these effects is witnessed in the form of increased Tc( R = 0), Jc and the extent of diamagnetism in the final compound.

Near room temperature and large-area synthesis of ZnO/Cu2O heterojunction for photocatalytic properties

NASA Astrophysics Data System (ADS)

Gao, Shiyong; Zhang, Jiejing; Li, Wenqiang; Jiao, Shujie; Nie, Yanguang; Fan, Huaiyun; Zeng, Zhi; Yu, Qingjiang; Wang, Jinzhong; Zhang, Xitian

2018-01-01

Large-area ZnO/Cu2O heterojunction have been successfully synthesized on Cu foil through a simple two-step solution method at near room temperature. The field emission scanning electron microscopy characterization indicates that the morphology of as-prepared Cu2O film grown on Cu foil is octahedral structure with diameter of ∼450 nm and ZnO is nanorod arrays structure with diameter of ∼150 nm. The current-voltage measurement of ZnO/Cu2O heterojunction shows a typical rectifying characteristics. Moreover, the photocatalytic test indicates that ZnO/Cu2O heterojunction exhibits high photocatalytic efficient for degradation of congo red dyes. The possible photocatalytic mechanism of ZnO/Cu2O heterojunction is also presented.

Erythrocyte CuZn superoxide dismutase activity is decreased in iron-deficiency anemia.

PubMed

Olivares, M; Araya, M; Pizarro, F; Letelier, A

2006-09-01

Iron and copper are essential microminerals that are intimately related. The present study was performed to determine the effect of iron-deficiency anemia (IDA) and treatment with iron on laboratory indicators of copper status. Hemoglobin, mean corpuscular volume erythrocyte Zn protoporphyrin, serum ferritin, serum copper, serum ceruloplasmin, and erythrocyte CuZn-superoxide dismutase (SOD) activity were studied in 12 adult women with IDA before and after iron treatment for 60-90 d (100 mg/d Fe, as ferric polymaltose) and in 27 women with normal iron status. Prior to treatment with iron, serum copper and ceruloplasmin were not different between the groups and treatment with iron did not affect these measures. IDA women, before and after treatment with iron, presented a 2.9- and 2-fold decrease in erythrocyte CuZn-SOD activity compared to women with normal iron status (p < 0.001). Treatment with iron increased erythrocyte CuZn-SOD activity of the IDA group; however, this change was not statistically significant. In conclusion, CuZn-SOD activity is decreased in IDA. Measurement of this enzyme activity is not useful for evaluating copper nutrition in iron-deficient subjects.

Synergies between Unsaturated Zn/Cu Doping Sites in Carbon Dots Provide New Pathways for Photocatalytic Oxidation

DOE PAGES

Wu, Wenting; Zhang, Qinggang; Wang, Ruiqin; ...

2017-12-07

Unsaturated metal species (UMS) confined in nanomaterials play important roles for electron transfer in a wide range of catalytic reactions. However, the limited fabrication methods of UMS restrict their wider catalytic applications. Here in this paper, we report on the synergy of unsaturated Zn and Cu dopants confined in carbon dots (ZnCu-CDs) to produce enhanced electron transfer and photooxidation processes in the doped CDs. The Zn/Cu species chelate with the carbon matrix mainly through Cu-O(N)-Zn-O(N)-Cu complexes. Within this structure, Cu 2+ acts as a mild oxidizer that facilely increases the unsaturated Zn content and also precisely tunes the unsaturated Znmore » valence state to Zn d+, where d is between 1 and 2, instead of Zn. With the help of UMS, electron-transfer pathways are produced, enhancing both the electron donating (7.0 times) and-accepting (5.3 times) abilities relative to conventional CDs. Because of these synergistic effects, the photocatalytic efficiency of CDs in photooxidation reactions is shown to improve more than 5-fold.« less

Enhanced Carrier Collection from CdS Passivated Grains in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells.

PubMed

Werner, Melanie; Keller, Debora; Haass, Stefan G; Gretener, Christina; Bissig, Benjamin; Fuchs, Peter; La Mattina, Fabio; Erni, Rolf; Romanyuk, Yaroslav E; Tiwari, Ayodhya N

2015-06-10

Solution processing of Cu2ZnSn(S,Se)4 (CZTSSe)-kesterite solar cells is attractive because of easy manufacturing using readily available metal salts. The solution-processed CZTSSe absorbers, however, often suffer from poor morphology with a bilayer structure, exhibiting a dense top crust and a porous bottom layer, albeit yielding efficiencies of over 10%. To understand whether the cell performance is limited by this porous layer, a systematic compositional study using (scanning) transmission electron microscopy ((S)TEM) and energy-dispersive X-ray spectroscopy of the dimethyl sulfoxide processed CZTSSe absorbers is presented. TEM investigation revealed a thin layer of CdS that is formed around the small CZTSSe grains in the porous bottom layer during the chemical bath deposition step. This CdS passivation is found to be beneficial for the cell performance as it increases the carrier collection and facilitates the electron transport. Electron-beam-induced current measurements reveal an enhanced carrier collection for this buried region as compared to reference cells with evaporated CdS.

Evidences for Cu and Zn Isotope Fractionation in Sediments and Particulate Suspended Matter of the Scheldt Estuary

NASA Astrophysics Data System (ADS)

Petit, J.; Mattielli, N.; de Jong, J.; Chou, L.

2004-05-01

Recent developments in MC-ICP-MS technology allow high precision measurements of heavy stable isotopes, such as Cu and Zn isotopes, which have been shown to undergo biotic or abiotic fractionation (1). Application of Zn isotopes to the study of aquatic ecosystems has already shown some interesting perspectives in their potential use as biogeochemical tracers in deep ocean carbonates (2) or Fe-Mn nodules (3). However, until now no investigation of possible Cu and Zn isotopic fractionation has been carried out within estuaries that are important pathways for hydrological and geochemical cycling of metals. Cu and Zn isotope geochemistry has been studied in sandy to loamy surface sediments (top 20 cm) and in suspended particulate matter (SPM) along a transect in a strong tidal estuary, the Scheldt estuary situated in Belgium and the Netherlands (November 2002). Further to separation of Cu, Fe and Zn by one step ion-exchange chromatography, Cu and Zn isotopic ratios are measured with a "Nu-Plasma" MC-ICP-MS. Instrumental mass bias is corrected using reference materials (Zn JMC, Cu NIST SRM 976 and Ga JMC standard) by simultaneous standard-sample bracketing and external normalization (500 ppb Zn doping for Cu isotopic analyses in static mode and 250 ppb Ga doping for Zn isotopic analyses in dynamic mode), together with a Ni correction. These methods lead to long-term reproducibility (2σ at 95 % confidence level) of ± 0.07 per mil for δ 66Zn (n=100 over 7 analysis sessions) and ± 0.06 per mil for δ 65Cu (n=120 over 8 analysis sessions) for 500 ppb of reference material. Average beam intensities are 6 V/ppm. Precise and reproducible results are obtained for concentration as low as 100 ppb for Cu and Zn. Expected Cu and Zn enrichment in SPM (120 ppm and 1200 ppm respectively) and sediments (being 6 to 10 times lower than SPM) in the upper estuary and progressive decrease in metal content by mixing downstream of the maximum turbidity zone (MTZ, around 5 psu) are

Facile synthesis of core-shell Cu2O@ ZnO structure with enhanced photocatalytic H2 production

NASA Astrophysics Data System (ADS)

Zhang, Yong-Hui; Jiu, Bei-Bei; Gong, Fei-Long; Lu, Kuan; Jiang, Nan; Zhang, Hao-Li; Chen, Jun-Li

2018-05-01

Core-shell Cu2O@ZnO composites were synthesized successfully based on a one-pot hydrothermal method in the presence of dioctyl sulfosuccinate sodium salt (AOT) surfactant. The Cu2O can be converted to rough core-shell Cu2O@ZnO structure by adjusting the amount of zinc powder added. The as-synthesized Cu2O@ZnO composites exhibited excellent photocatalytic activity and the amount of H2 generated using these composites was 4.5-fold more than that produced with Cu2O cubes. A possible photocatalytic mechanism for the Cu2O@ZnO composites with enhanced photocatalytic activity could be the separation by ZnO of the effective charge carriers.

Mass Flux of ZnSe by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Sha, Yi-Gao; Su, Ching-Hua; Palosz, W.; Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Liu, Hao-Chieh; Brebrick, R. F.

1995-01-01

Mass fluxes of ZnSe by physical vapor transport (PVT) were measured in the temperature range of 1050 to 1160 C using an in-situ dynamic technique. The starting materials were either baked out or distilled under vacuum to obtain near-congruently subliming compositions. Using an optical absorption technique Zn and Se, were found to be the dominant vapor species. Partial pressures of Zn and Se, over the starting materials at temperatures between 960 and 1140 C were obtained by measuring the optical densities of the vapor phase at the wavelengths of 2138, 3405, 3508, 3613, and 3792 A. The amount and composition of the residual gas inside the experimental ampoules were measured after the run using a total pressure gauge. For the first time, the experimentally determined partial pressures of Zn and Se, and the amount and composition of the residual gas were used in a one-dimensional diffusion limited analysis of the mass transport rates for a PVT system. Reasonable agreement between the experimental and theoretical results was observed.

Aqueous synthesis of high bright and tunable near-infrared AgInSe2-ZnSe quantum dots for bioimaging.

PubMed

Che, Dongchen; Zhu, Xiaoxu; Wang, Hongzhi; Duan, Yourong; Zhang, Qinghong; Li, Yaogang

2016-02-01

Efficient synthetic methods for near-infrared quantum dots with good biophysical properties as bioimaging agents are urgently required. In this work, a simple and fast synthesis of highly luminescent, near-infrared AgInSe2-ZnSe quantum dots (QDs) with tunable emissions in aqueous media is reported. This method avoids high temperature and pressure and organic solvents to directly generate water-dispersible AgInSe2-ZnSe QDs. The photoluminescence emission peak of the AgInSe2-ZnSe QDs ranged from 625 to 940nm, with quantum yields up to 31%. The AgInSe2-ZnSe QDs with high quantum yield, near-infrared and low cytotoxic could be used as good cell labels, showing great potential applications in bio-imaging. Copyright © 2015 Elsevier Inc. All rights reserved.

The ZnSe(110) puzzle - Comparison with GaAs(110)

NASA Technical Reports Server (NTRS)

Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

1984-01-01

The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

Surface Morphology of Undoped and Doped ZnSe Films

NASA Technical Reports Server (NTRS)

George, T.; Hayes, M.; Chen, H.; Chattopadhyay, K.; Thomas E.; Morgan, S.; Burger, A.

1998-01-01

Rare-earth doped ions in polar II-VI semiconductors have recently played an important role in the optical properties of materials and devices. In this study, undoped ZnSe and erbium doped ZnSe films were grown by radio frequency (RF) magnetron sputtering method. Atomic Force Microscopy (AFM) was used together with optical microscopy and UV-Vis spectroscopy to characterize the films. Doped samples were found to have higher surface roughness and quite different surface morphology compared to that of undoped samples. The grown films generally show a relatively smooth and uniform surface indicating that they are of overall good quality. The impact of plasma etching on ZnSe:Er film examined under AFM is also discussed.

Spatial pattern analysis of Cu, Zn and Ni and their interpretation in the Campania region (Italy)

NASA Astrophysics Data System (ADS)

Petrik, Attila; Albanese, Stefano; Jordan, Gyozo; Rolandi, Roberto; De Vivo, Benedetto

2017-04-01

The uniquely abundant Campanian topsoil dataset enabled us to perform a spatial pattern analysis on 3 potentially toxic elements of Cu, Zn and Ni. This study is focusing on revealing the spatial texture and distribution of these elements by spatial point pattern and image processing analysis such as lineament density and spatial variability index calculation. The application of these methods on geochemical data provides a new and efficient tool to understand the spatial variation of concentrations and their background/baseline values. The determination and quantification of spatial variability is crucial to understand how fast the change in concentration is in a certain area and what processes might govern the variation. The spatial variability index calculation and image processing analysis including lineament density enables us to delineate homogenous areas and analyse them with respect to lithology and land use. Identification of spatial outliers and their patterns were also investigated by local spatial autocorrelation and image processing analysis including the determination of local minima and maxima points and singularity index analysis. The spatial variability of Cu and Zn reveals the highest zone (Cu: 0.5 MAD, Zn: 0.8-0.9 MAD, Median Deviation Index) along the coast between Campi Flegrei and the Sorrento Peninsula with the vast majority of statistically identified outliers and high-high spatial clustered points. The background/baseline maps of Cu and Zn reveals a moderate to high variability (Cu: 0.3 MAD, Zn: 0.4-0.5 MAD) NW-SE oriented zone including disrupted patches from Bisaccia to Mignano following the alluvial plains of Appenine's rivers. This zone has high abundance of anomaly concentrations identified using singularity analysis and it also has a high density of lineaments. The spatial variability of Ni shows the highest variability zone (0.6-0.7 MAD) around Campi Flegrei where the majority of low outliers are concentrated. The variability of

Thermoelectric and mechanical properties of spark plasma sintered Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}: Promising thermoelectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah

2014-12-29

We report the synthesis of thermoelectric compounds, Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu{sub 3}SbSe{sub 4} exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu{sub 3}SbSe{sub 3}, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu{sub 3}SbSe{sub 4} was found to be ∼1.2 as compared to 0.2 V{sup −1} for Cu{sub 3}SbSe{sub 3} at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracturemore » toughness values were far superior to the other competing state-of-the-art thermoelectric materials.« less

ZnO/ZnSxSe1-x core/shell nanowire arrays as photoelectrodes with efficient visible light absorption

NASA Astrophysics Data System (ADS)

Wang, Zhenxing; Zhan, Xueying; Wang, Yajun; Safdar, Muhammad; Niu, Mutong; Zhang, Jinping; Huang, Ying; He, Jun

2012-08-01

ZnO/ZnSxSe1-x core/shell nanowires have been synthesized on n+-type silicon substrate via a two-step chemical vapor deposition method. Transmission electron microscopy reveals that ZnSxSe1-x can be deposited on the entire surface of ZnO nanowire, forming coaxial heterojunction along ZnO nanowire with very smooth shell surface and high shell thickness uniformity. The photoelectrode after deposition of the ternary alloy shell significantly improves visible light absorption efficiency. Electrochemical impedance spectroscopy results explicitly indicate that the introduction of ZnSxSe1-x shell to ZnO nanowires effectively improves the photogenerated charge separation process. Our finding opens up an efficient means for achieving high efficient energy conversion devices.

The determination of extinction coefficient of CuInS2, and ZnCuInS3 multinary nanocrystals.

PubMed

Qin, Lei; Li, Dongze; Zhang, Zhuolei; Wang, Kefei; Ding, Hong; Xie, Renguo; Yang, Wensheng

2012-10-21

A pioneering work for determining the extinction coefficient of colloidal semiconductor nanocrystals (NCs) has been cited over 1500 times (W. Yu, W. Guo, X. G. Peng, Chem. Mater., 2003, 15, 2854-2860), indicating the importance of calculating NC concentration for further research and applications. In this study, the size-dependent nature of the molar extinction coefficient of "greener" CuInS(2) and ZnCuInS(3) NCs with emission covering the whole visible to near infrared (NIR) is presented. With the increase of NC size, the resulting quantitative values of the extinction coefficients of ternary CuInS(2) and quaternary ZnCuInS(3) NCs are found to follow a power function with exponents of 2.1 and 2.5, respectively. Obviously, a larger value of extinction coefficient is observed in quaternary NCs for the same size of particles. The difference of the extinction coefficient from both samples is clearly demonstrated due to incorporating ZnS with a much larger extinction coefficient into CuInS(2) NCs.

Usual dietary intakes of selected trace elements (Zn, Cu, Mn, I, Se, Cr, and Mo) and biotin revealed by a survey of four-season 7-consecutive day weighed dietary records in middle-aged Japanese dietitians.

PubMed

Imaeda, Nahomi; Kuriki, Kiyonori; Fujiwara, Nakako; Goto, Chiho; Tokudome, Yuko; Tokudome, Shinkan

2013-01-01

We aimed to identify food sources of selected trace elements (Zn, Cu, Mn, I, Se, Cr, Mo) and biotin in the Japanese diet and to assess usual dietary intakes based on the ratios of within-person to between-person variance. Subjects were 98 middle-aged dietitians living in central Japan who participated in a survey of four-season 7 consecutive day weighed diet records. Based on the latest Standard Tables of Food Composition in Japan published in 2010, food sources of selected nutrients were located according to a contribution analysis, and computed usual dietary intakes. Dietary intakes were checked with the Dietary Reference Intakes for Japanese 2010. Prevalence of inadequacy in a group was determined using the Estimated Average Requirement cut-point method. The major contributors to selected trace elements and biotin were not only meat and milk, but also traditional Japanese food items, including rice, tofu and tofu products, fish, seaweed, chicken eggs, fermented soy bean seasonings, and green tea. Medians of usual intakes were estimated for Zn (men 8.9 mg, women 8.4 mg), Cu (1.32 mg, 1.21 mg), Mn (3.73 mg, 3.76 mg), I (312 μg, 413 μg), Se (97 μg, 94 μg), Cr (10 μg, 9 μg), Mo (226 μg, 184 μg), and biotin (51.7 μg, 47.6 μg). The prevalence of inadequacy of dietary intakes was high for Zn, Cu and Cr. Regarding I, the proportion above the Tolerant Upper Level was overestimated based on the crude mean value. We first identified food sources of selected trace elements and biotin in the Japanese diet, and assessed the usual intakes.

Growth and characterization of Hg(1-x)Zn(x)Se

NASA Technical Reports Server (NTRS)

Andrews, R. N.

1986-01-01

Hg sub 1-xZn sub xSe alloys of composition x=0.10 were grown in a Bridgman-Stockbarger growth furnace at translation rates of 0.3 and 0.1 micron sec. The axial and radial composition profiles were determined using precision density measurements and IR transmission-edge-mapping, respectively. A more radially homogeneous alloy was produced at the slower growth rate, while the faster growth rate produced more axially homogeneous alloys. A determination of the electrical properties of the Hg sub 1-xZn sub xSe samples in the temperature range 300K-20K was also made. Typical carrier concentrations were on the order of magnitude of 10 to the 18th power cu/cm, and remained fairly constant as a function of temperature. A study was also made of the temperature dependence of the resistivity and Hall mobility. The effect of annealing in a selenium vapor on both the IR transmission and the electrical properties was determined. Annealing was effective in reducing the number of native donor defects and at the resulting lower carrier concentrations, charge carrier concentration was shown to be a function of temperature. Annealing caused the mobility to increase, primarily at the lower temperature, and the room temperature resistivity to increase. Annealing was also observed to greatly enhance the % IR transmittance of the samples. This was due primarily to the effect of annealing on decreasing the charge carrier concentration.

Cu-doped ZnO nanorod arrays: the effects of copper precursor and concentration

PubMed Central

2014-01-01

Cu-doped ZnO nanorods have been grown at 90°C for 90 min onto a quartz substrate pre-coated with a ZnO seed layer using a hydrothermal method. The influence of copper (Cu) precursor and concentration on the structural, morphological, and optical properties of ZnO nanorods was investigated. X-ray diffraction analysis revealed that the nanorods grown are highly crystalline with a hexagonal wurtzite crystal structure grown along the c-axis. The lattice strain is found to be compressive for all samples, where a minimum compressive strain of −0.114% was obtained when 1 at.% Cu was added from Cu(NO3)2. Scanning electron microscopy was used to investigate morphologies and the diameters of the grown nanorods. The morphological properties of the Cu-doped ZnO nanorods were influenced significantly by the presence of Cu impurities. Near-band edge (NBE) and a broad blue-green emission bands at around 378 and 545 nm, respectively, were observed in the photoluminescence spectra for all samples. The transmittance characteristics showed a slight increase in the visible range, where the total transmittance increased from approximately 80% for the nanorods doped with Cu(CH3COO)2 to approximately 90% for the nanorods that were doped with Cu(NO3)2. PMID:24855460

Phytotoxic effects of Cu and Zn on soybeans grown in field-aged soils: their additive and interactive actions.

PubMed

Kim, Bojeong; McBride, Murray B

2009-01-01

A field pot experiment was conducted to investigate the interactive phytotoxicity of soil Cu and Zn on soybean plants [Glycine max (L.) Merr.]. Two soils (Arkport sandy loam [coarse-loamy, mixed, active, mesic Lamellic Hapludalf] and Hudson silty clay loam [fine, illitic, mesic Glossaquic Hapludalf]) spiked with Cu, Zn, and combinations of both to reach the final soil metal range of 0 to 400 mg kg(-1) were tested in a 2-yr bioassay after 1 yr of soil-metal equilibration in the field. The soluble and easily-extractable fraction of soil Zn (or Cu), estimated by dilute CaCl2, increased linearly in response to the total Zn (or Cu) added. This linearity was, however, strongly affected where soils were treated with both metals in combination, most notably for Zn, as approximately 50% more of soil Zn was extracted into solution when the Cu level was high. Consequently, added Zn is less likely to be stabilized by aging than added Cu when both metals are present in field soils. The predictive model relating soil metal extractability to plant Zn concentration also revealed a significant Cu-Zn interaction. By contrast, the interaction between the two metals contributed little to explain plant Cu uptake. The additive action of soil Cu and Zn was of considerable importance in explaining plant biomass reduction. This work clearly demonstrates the critical roles of the properties of the soil, the nature of the metal, and the level of other toxic metals present on the development of differential phytotoxicity due to soil Cu and Zn.

Effect of Cu2+ substitution on the magnetic properties of co-precipitated Ni-Cu-Zn ferrite nanoparticles

NASA Astrophysics Data System (ADS)

Ramakrishna, K. S.; Srinivas, Ch.; Tirupanyam, B. V.; Ramesh, P. N.; Meena, S. S.; Potukuchi, D. M.; Sastry, D. L.

2017-05-01

Spinel ferrite nanoparticles with chemical equation NixCu0.1Zn0.9-xFe2O4 (x = 0.5, 0.6, 0.7) have been synthsized using co-precipitation method followed by heat treatment at a temperature of 200 °C for 2h. The results of XRD, FE-SEM and VSM studies are reported. XRD patterns confirm the formation of cubic spinel phase of ferrite samples along with small amount of a secondary phase of α-Fe2O3 whose concentration decreases as Ni2+ concentration increases. The crystallite sizes (in the range of 7.5-13.9 nm) increase and the lattice parameter decreases with increase in Ni2+ ion concentration. These values are comparable to those of NiZn ferrite without Cu substitution. It has been observed that there is a considerable reduction in saturation magnetisation (Ms). This and differences in other magnetic parameters are attributed to considerable changes in cation distribution or core shell interactions of NiZn ferrite with 10 mole% Cu substitution in the place of Zn.

Comment on "Active sites for CO2 hydrogenation to methanol on Cu/ZnO catalysts".

PubMed

Nakamura, Junji; Fujitani, Tadahiro; Kuld, Sebastian; Helveg, Stig; Chorkendorff, Ib; Sehested, Jens

2017-09-01

Kattel et al (Reports, 24 March 2017, p. 1296) report that a zinc on copper (Zn/Cu) surface undergoes oxidation to zinc oxide/copper (ZnO/Cu) during carbon dioxide (CO 2 ) hydrogenation to methanol and conclude that the Cu-ZnO interface is the active site for methanol synthesis. Similar experiments conducted two decades ago by Fujitani and Nakamura et al demonstrated that Zn is attached to formate rather than being fully oxidized. Copyright © 2017, American Association for the Advancement of Science.

Extremely High Phosphate Sorption Capacity in Cu-Pb-Zn Mine Tailings

PubMed Central

Huang, Longbin; Li, Xiaofang; Nguyen, Tuan A. H.

2015-01-01

Elevated inorganic phosphate (Pi) concentrations in pore water of amended tailings under direct revegetation may cause toxicity in some native woody species but not native forbs or herb species, all of which are key constituents in target native plant communities for phytostabilizing base metal mine tailings. As a result, Pi sorption capacity has been quantified by a conventional batch procedure in three types of base metal mine tailings sampled from two copper (Cu)-lead (Pb)-zinc (Zn) mines, as the basis for Pi-fertiliser addition. It was found that the Pi-sorption capacity in the tailings and local soil was extremely high, far higher than highly weathered agricultural soils in literature, but similar to those of volcanic ash soils. The Langmuir P-sorption maximum was up to 7.72, 4.12, 4.02 and 3.62 mg P g-1 tailings, in the fresh tailings of mixed Cu-Pb-Zn streams (MIMTD7), the weathered tailings of mixed Cu-Pb-Zn streams (MIMTD5), EHM-TD (fresh Cu-stream, high magnetite content) and local soil (weathered shale and schist), respectively. Physicochemical factors highly correlated with the high Pi-sorption in the tailings were fine particle distribution, oxalate and dithionite-citrate-bicarbonate extractable Fe (FeO and Fed), oxalate-extractable Al and Mn, and the levels of soluble Cd and Zn, and total S and Fe. Large amounts of amorphous Fe oxides and oxyhydroxides may have been formed from the oxidation of pyritic materials and redox cycles of Fe-minerals (such as pyrite (FeS2), ankerite (Ca(Fe Mg)(CO3)2 and siderite (FeCO3), as indicated by the extractable FeO values. The likely formation of sparingly soluble Zn-phosphate in the Pb-Zn tailings containing high levels of Zn (from sphalerite ((Zn,Fe)S, ZnS, (Zn,Cd)S)) may substantially lower soluble Zn levels in the tailings through high rates of Pi-fertiliser addition. As a result, the possibility of P-toxicity in native plant species caused by the addition of soluble phosphate fertilizers would be minimal. PMID

Effects of Zn²⁺ and Cu²⁺ on loach ovaries and ova development.

PubMed

Tang, Jian-Xun; Li, Jun-Rong; Liu, Zhong-Liang; Zhao, Hua; Tao, Xiao-Min; Cheng, Zhang-Shun

2013-10-01

This study compared the accumulation of Zn²⁺ and Cu²⁺ in the ovaries and ova of loaches under different concentrations of Zn²⁺ (1.00, 2.50 and 5.00 mg/L respectively) and Cu²⁺ (0.10, 0.25 and 0.50 mg/L respectively). The results showed that both Zn²⁺ and Cu²⁺ accumulated in the ovaries, and that the relationship between accumulation and time was linear over 20 days of exposure. The accumulation of the metals in ovaries was closely related to the concentration of exposure in the solutions (P<0.05), and was obviously affected by the time and doses. However, the Cu²⁺ concentration was significantly higher than Zn²⁺ (P<0.05). The development level of ova in the ovaries also correlated with the concentration and exposure period in the Zn²⁺ and Cu²⁺ solutions. This study compared the accumulation of Zn 2+ and Cu 2+ in the ovaries and ova of loaches under different concentrations of Zn 2+ (1.00, 2.50 and 5.00 mg/L respectively) and Cu 2+ (0.10, 0.25 and 0.50 mg/L respectively). The results showed that both Zn 2+ and Cu 2+ accumulated in the ovaries, and that the relationship between accumulation and time was linear over 20 days of exposure. The accumulation of the metals in ovaries was closely related to the concentration of exposure in the solutions ( P< 0.05), and was obviously affected by the time and doses. However, the Cu 2+ concentration was significantly higher than Zn 2+ ( P< 0.05). The development level of ova in the ovaries also correlated with the concentration and exposure period in the Zn 2+ and Cu 2+ solutions.

Synthesis and photoelectrochemical properties of a novel CuO/ZnO nanorod photocathode for solar hydrogen generation

NASA Astrophysics Data System (ADS)

Shaislamov, Ulugbek; Lee, Heon-Ju

2016-10-01

Here, we present a facile synthesis method and photoelectrochemical characterizations of a p-type CuO-nanorod array photoelectrode with ZnO nanorod branches. Vertically-aligned CuO nanorods were synthesized by using direct oxidation of metallic Cu nanorods grown on a Cu substrate by using a facile template-assisted electrodeposition method. The formed CuONR/ZnONB hierarchically-structured photoelectrode exhibited remarkable photoelectrodechemical performance and outstanding stability compared to the CuO NR photoelectrode without ZnO NR branches. Morphological, optical and electrochemical characterizations were carried out in order to examine the effects of ZnO nanorod branches on the stability and the overall electrochemical performance of the electrode.

Characterization of high-purity 82Se-enriched ZnSe for double-beta decay bolometer/scintillation detectors

NASA Astrophysics Data System (ADS)

Silva, B. C.; de Oliveira, R.; Ribeiro, G. M.; Cury, L. A.; Leal, A. S.; Nagorny, S.; Krambrock, K.

2018-02-01

Zinc selenide (ZnSe), when enriched with 82Se isotope, is one of the most promising materials for the construction of a bolometer/scintillation detector to study neutrinoless double beta decay (0νDBD). Because the 0νDBD is a very rare event, a high quantity of high-purity monocrystalline ZnSe is needed, which means high costs. Therefore, the knowledge of the best material parameters, especially the presence of point defects, is essential to make feasible the construction of such a detector. In this work, both the as-grown and thermally annealed ZnSe enriched to 95% with the 82Se isotope grown by the Bridgman technique from high-purity starting materials were characterized by electron paramagnetic resonance (EPR), photo-EPR, neutron activation, photoluminescence, and electrical measurements. It is shown that although thermal annealing increases crystal homogeneity and reduces microcracks, the scintillation efficiency is much better for the as-grown material. The higher scintillation efficiency is due to the presence of donor acceptor pairs in the as-grown material, which are responsible for strong luminescence/scintillation in the red spectral region. By photo-EPR, the donor acceptor pairs are identified as closed VZn - AlZn pairs which are lost during the annealing procedure. Electrical characterization shows that the as-grown material is of good quality as it has high electron mobility at low temperatures. Excellent material parameters for the construction of the bolometer/scintillation detector based on enriched Zn82Se are discussed.

Differential effects of β-mercaptoethanol on CdSe/ZnS and InP/ZnS quantum dots.

PubMed

Georgin, Marcel; Carlini, Lina; Cooper, Daniel; Bradforth, Stephen E; Nadeau, Jay L

2013-07-07

The small thiol β-mercaptoethanol (BME) has been used as an anti-blinking reagent for CdSe/ZnS quantum dots (QDs), although its effects on QD photoluminescence are complex. It acts as an antioxidant as well as a hole scavenger on both CdSe and CdTe, which leads to changes in emission intensity and lifetime that vary qualitatively according to BME concentration, time of incubation, and pH of the solution. Because the band edge energies of InP/ZnS are shifted from those of CdTe and CdSe, it may be expected that thiols including BME might be unable to trap holes from these QDs. In this study, we use steady-state and time-resolved emission spectroscopy with physical fitting models combined with blinking analysis to compare the effects of different concentrations of BME on CdSe/ZnS vs. InP/ZnS QDs over time. We also find excellent correspondence between simple physical model parameters and blinking off times, a finding that will be useful for all blinking studies involving semiconductor nanoparticles. BME alters blinking in InP/ZnS QDs with a single ZnS shell, but not those with double thickness shells. The effects are similar to those seen with CdSe/ZnS, despite very different effects of BME on steady-state spectra, and highly pH-dependent.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, Robert F.; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin; Shih, Hung-Dah

2000-01-01

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Heat Treatments of ZnSe Starting Materials for Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Palosz, W.; Feth, S.; Lehoczky, S. L.

1998-01-01

The effect of different heat treatments on stoichiometry and residual gas pressure in ZnSe physical vapor transport system was investigated. The dependence of the amount and composition of the residual gas on various heat treatment procedures is reported. Heat treatment of ZnSe starting materials by baking under the condition of dynamic vacuum to adjust its stoichiometry was performed and the effectiveness of the treatment was confirmed by the measurements of the partial pressure of Se2, P(sub Se2), in equilibrium with the heat treated samples. Optimum heat treatment procedures on the ZnSe starting material for the physical vapor transport process are discussed and verified experimentally.

Heat Treatments of ZnSe Starting Materials for Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Palosz, W.; Feth, S.; Lehoczky, S. L.

1997-01-01

The effect of different heat treatments on stoichiometry and residual gas pressure in ZnSe physical vapor transport system was investigated. The dependence of the amount and composition of the residual gas on various heat treatment procedures is reported. Heat treatment of ZnSe starting materials by baking under the condition of dynamic vacuum to adjust its stoichiometry was performed and the effectiveness of the treatment was confirmed by the measurements of the partial pressure of Se2, P(sub Se2), in equilibrium with the heat treated samples. Optimum heat treatment procedures on the ZnSe starting material for the physical vapor transport process are discussed and verified experimentally.

Pressure-induced increase of exciton-LO-phonon coupling in a ZnCdSe/ZnSe quantum well

NASA Astrophysics Data System (ADS)

Guo, Z. Z.; Liang, X. X.; Ban, S. L.

2003-07-01

The possibility of pressure-induced increase of exciton-LO-phonon coupling in ZnCdSe/ZnSe quantum wells is studied. The ground state binding energies of the heavy hole excitons are calculated using a variational method with consideration of the electron-phonon interaction and the pressure dependence of the parameters. The results show that for quantum wells with intermediate well width, the exciton binding energy and the LO-phonon energy may coincide in the course of pressure increasing, resulting in the increase of exciton-LO-phonon coupling. It is also found that among the pressure-dependent parameters, the influence of the lattice constant is the most important one. The changes of both the effective masses and the dielectric constants have obvious effects on the exciton binding energy, but their influences are counterbalanced.

Molecular cloning and characterization of Siamese crocodile (Crocodylus siamensis) copper, zinc superoxide dismutase (CSI-Cu,Zn-SOD) gene.

PubMed

Sujiwattanarat, Penporn; Pongsanarakul, Parinya; Temsiripong, Yosapong; Temsiripong, Theeranan; Thawornkuno, Charin; Uno, Yoshinobu; Unajak, Sasimanas; Matsuda, Yoichi; Choowongkomon, Kiattawee; Srikulnath, Kornsorn

2016-01-01

Superoxide dismutase (SOD, EC 1.15.1.1) is an antioxidant enzyme found in all living cells. It regulates oxidative stress by breaking down superoxide radicals to oxygen and hydrogen peroxide. A gene coding for Cu,Zn-SOD was cloned and characterized from Siamese crocodile (Crocodylus siamensis; CSI). The full-length expressed sequence tag (EST) of this Cu,Zn-SOD gene (designated as CSI-Cu,Zn-SOD) contained 462bp encoding a protein of 154 amino acids without signal peptides, indicated as intracellular CSI-Cu,Zn-SOD. This agreed with the results from the phylogenetic tree, which indicated that CSI-Cu,Zn-SOD belonged to the intracellular Cu,Zn-SOD. Chromosomal location determined that the CSI-Cu,Zn-SOD was localized to the proximal region of the Siamese crocodile chromosome 1p. Several highly conserved motifs, two conserved signature sequences (GFHVHEFGDNT and GNAGGRLACGVI), and conserved amino acid residues for binding copper and zinc (His(47), His(49), His(64), His(72), His(81), Asp(84), and His(120)) were also identified in CSI-Cu,Zn-SOD. Real-time PCR analysis showed that CSI-Cu,Zn-SOD mRNA was expressed in all the tissues examined (liver, pancreas, lung, kidney, heart, and whole blood), which suggests a constitutively expressed gene in these tissues. Expression of the gene in Escherichia coli cells followed by purification yielded a recombinant CSI-Cu,Zn-SOD, with Km and Vmax values of 6.075mM xanthine and 1.4×10(-3)mmolmin(-1)mg(-1), respectively. This Vmax value was 40 times lower than native Cu,Zn-SOD (56×10(-3)mmolmin(-1)mg(-1)), extracted from crocodile erythrocytes. This suggests that cofactors, protein folding properties, or post-translational modifications were lost during the protein purification process, leading to a reduction in the rate of enzyme activity in bacterial expression of CSI-Cu,Zn-SOD. Copyright © 2015 Elsevier Inc. All rights reserved.

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM{sub 2}InTe{sub 4} (M=Zn, Cd)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nolas, George S., E-mail: gnolas@usf.edu; Hassan, M. Shafiq; Dong, Yongkwan

Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn{sub 2}InSe{sub 4}. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficientmore » and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications. - Graphical abstract: The structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications. - Highlights: • The physical properties of CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. • These materials have potential for thermoelectric applications. • Their direct band gaps also suggest potential for photovoltaics applications.« less

Electronic and magnetic properties of Zn1-xFexSe alloys

NASA Astrophysics Data System (ADS)

Khatta, Swati; Tripathi, S. K.; Prakash, Satya

2017-12-01

The spin polarized density functional theory along with self consistent plane wave pseudopotential method is used to investigate electronic and magnetic properties of ternary Zn1-xFexSe alloys with x = 0.125, 0.25, 0.5 and 0.75. The exchange-correlation potential treated within generalized gradient approximation is used. The calculated spin-polarized band structures, partial and total density of states reveal that Zn0.875Fe0.125Se and Zn0.75Fe0.25Se exhibit half metallic ferromagnetic characteristics and Zn0.50Fe0.50Se is nearly half metallic in nature. The half metallic band gaps for x = 0.125 and 0.25 are 0.69 and 0.39 eV respectively, while the corresponding band gaps are 0.86 and 0.81 eV. The p-d hybridization reduces the magnetic moment of Fe atoms from its free space charge value of 4 μB and induces the small magnetic moments on Zn and Se sites. The results are compared with available experimental data.

Phytoextraction of Zn and Cu from sewage sludge and impact on agronomic characteristics.

PubMed

Xiaomei, Liu; Qitang, Wu; Banks, M K; Ebbs, S D

2005-01-01

The presence of elevated concentrations of heavy metals limits the usage of sewage sludge as a fertilizer and soil amendment. Experiments were carried out to examine the extent to which seven plant species phytoextracted Zn and Cu from dewatered sludge. The hyperaccumulators Thlaspi caerulescens and Sedum alfredii showed the greatest removal of Zn, while shoots and tubers of two species of Alocasia showed the greatest Cu removal. Cultivation of plants in the sludge resulted in significant decreases in total Zn and changes in the partitioning of Zn between soil pools. However, Cu levels were largely unchanged and remained associated predominantly with the organic matter pool. Agronomic characteristics of the sludge material, such as pH, organic matter content, and nitrogen, phosphorus, and potassium concentrations, did not change significantly during the four-month growth period, indicating that subsequent crops could be sustained by this material. These results suggest that Zn can be phytoextracted from sludge material, provided the rate of metal uptake exceeds the rate of mobilization to the exchangeable fraction. Since there was no appreciable accumulation of Zn and Cu in seeds of Zea mays in this study, some tissues from sludge-grown plants could potentially be used as animal fodder.

Synthesis and characterization of Ce, Cu co-doped ZnS nanoparticles

NASA Astrophysics Data System (ADS)

Harish, G. S.; Sreedhara Reddy, P.

2015-09-01

Ce, Cu co-doped ZnS nanoparticles were prepared at room temperature using a chemical co-precipitation method. The prepared nanoparticles were characterized by X- ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive analysis of X-rays (EDAX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) and high resolution Raman spectroscopic techniques. Transmission electron microscopy (TEM) and X-ray diffraction studies showed that the diameter of the particles was around 2-3 nm. Broadened XRD peaks revealed the formation of nanoparticles with a face centered cubic (fcc) structure. DRS studies confirmed that the band gap increased with an increase in the dopant concentration. The Raman spectra of undoped and Ce, Cu ions co-doped ZnS nanoparticles showed longitudinal optical mode and transverse optical mode. Compared with the Raman modes (276 and 351 cm-1) of undoped ZnS nanoparticles, the Raman modes of Ce, Cu co- doped ZnS nanoparticles were slightly shifted towards lower frequency. PL spectra of the samples showed remarkable enhancement in the intensity upon doping.

Reduced anti-ferromagnetism promoted by Zn 3d 10 substitution at CuO 2 planar sites of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4O 12-δ superconductors

NASA Astrophysics Data System (ADS)

Mumtaz, M.; Khan, Nawazish A.

2009-11-01

The role of charge carriers in ZnO 2/CuO 2 planes of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4-yZn yO 12-δ material in bringing about superconductivity has been explained. Due to suppression of anti-ferromagnetic order with Zn 3d 10 ( S=0) substitution at Cu 3d 9(S={1}/{2}) sites in the inner CuO 2 planes of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4O 12-δ superconductor, the distribution of charge carriers becomes homogeneous and optimum, which is evident from the enhanced superconductivity parameters. The decreased c-axis length with the increase of Zn doping improves interlayer coupling and hence the three dimensional (3D) conductivity in the unit cell is enhanced. Also the softening of phonon modes with the increased Zn doping indicates that the electron-phonon interaction has an essential role in the mechanism of high- Tc superconductivity in these compounds.

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

1993-01-01

The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(1-x), ZnTe(x)Se(1-x), and Zn(1-x)Cd(x)Se). These materials are useful for opto-electronic applications such as high efficient light emitting diodes and low power threshold and high temperature lasers in the blue-green region of the visible spectrum. The recent demonstration of its optical bistable properties also makes ZnSe a possible candidate material for digital optical computers. The investigation consists of an extensive ground-based study followed by flight experimentation, and involves both experimental and theoretical work. The objectives of the ground-based work are to establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low gravity environment and to obtain the experimental data and perform the analyses required to define the optimum parameters for the flight experiments. During the six months of the Preliminary Definition Phase, the research efforts were concentrated on the binary compound ZnSe - the purification of starting materials of Se by zone refining, the synthesis of ZnSe starting materials, the heat treatments of the starting materials, the vapor transport rate measurements, the vapor partial pressure measurements of ZnSe, the crystal growth of ZnSe by physical vapor transport, and various characterization on the grown ZnSe crystals.

Formation of two-dimensional CuSe on Cu(111) at very low selenium coverage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walen, Holly; Liu, Da -Jiang; Oh, Junepyo

2016-05-09

Here, using scanning tunneling microscopy (STM), we observe that adsorption of Se on Cu(111) produces islands with (√3 x √3)R30° structure, at Se coverages far below the structure's ideal coverage of 1/3 ML. Based on density functional theory (DFT), these islands cannot form due to attractive interactions between chemisorbed Se atoms. DFT shows that incorporating Cu atoms into the √3-Se lattice stabilizes the structure, which provides a plausible explanation for the experimental observations.

Optical parametric oscillation in a random poly-crystalline medium: ZnSe ceramic

NASA Astrophysics Data System (ADS)

Ru, Qitian; Kawamori, Taiki; Lee, Nathaniel; Chen, Xuan; Zhong, Kai; Mirov, Mike; Vasilyev, Sergey; Mirov, Sergey B.; Vodopyanov, Konstantin L.

2018-02-01

We demonstrate an optical parametric oscillator (OPO) based on random phase matching in a polycrystalline χ(2) material, ZnSe. The subharmonic OPO utilized a 1.5-mm-long polished ZnSe ceramic sample placed at the Brewster's angle and was synchronously pumped by a Kerr-lens mode-locked Cr:ZnS laser with a central wavelength of 2.35 μm, a pulse duration of 62 fs, and a repetition frequency of 79 MHz. The OPO had a 90-mW pump threshold, and produced an ultrabroadband spectrum spanning 3-7.5 μm. The observed pump depletion was as high as 79%. The key to success in achieving the OPO action was choosing the average grain size of the ZnSe ceramic to be close to the coherence length ( 100 μm) for our 3-wave interaction. This is the first OPO that uses random polycrystalline material with quadratic nonlinearity and the first OPO based on ZnSe. Very likely, random phase matching in ZnSe and similar random polycrystalline materials (ZnS, CdS, CdSe, GaP) represents a viable route for generating few-cycle pulses and multi-octave frequency combs, thanks to a very broadband nonlinear response.

64Cu, a powerful positron emitter for immunoimaging and theranostic: Production via natZnO and natZnO-NPs.

PubMed

Karimi, Zahra; Sadeghi, Mahdi; Mataji-Kojouri, Naimeddin

2018-07-01

64 Cu is one of the most beneficial radionuclide that can be used as a theranostic agent in Positron Emission Tomography (PET) imaging. In this current work, 64 Cu was produced with zinc oxide nanoparticles ( nat ZnONPs) and zinc oxide powder ( nat ZnO) via the 64 Zn(n,p) 64 Cu reaction in Tehran Research Reactor (TRR) and the activity values were compared with each other. The theoretical activity of 64 Cu also was calculated with MCNPX-2.6 and the cross sections of this reaction were calculated by using TALYS-1.8, EMPIRE-3.2.2 and ALICE/ASH nuclear codes and were compared with experimental values. Transmission Electronic Microscopy (TEM), Scanning Electronic Microscopy (SEM) and X-Ray Diffraction (XRD) analysis were used for samples characterizations. From these results, it's concluded that 64 Cu activity value with nanoscale target was achieved more than the bulk state target and had a good adaptation with the MCNPX result. Copyright © 2018 Elsevier Ltd. All rights reserved.

Investigations on structural, vibrational and dielectric properties of nanosized Cu doped Mg-Zn ferrites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, Anand; Department of Physics, MEDICAPS Institute of Science and Technology, Pithampur 453331; Rajpoot, Rambabu

2016-05-23

Transition metal Cu{sup 2+} doped Mg-Zn ferrite [Mg{sub 0.5}Zn{sub 0.5-x}Cu{sub x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 0.5)] were prepared by sol gel auto combustion (SGAC) method to probe the structural, vibrational and electrical properties. X-ray diffraction (XRD) pattern reveals a single-phase cubic spinel structure without the presence of any secondary phase corresponding to other structure. The average particle size of the parent Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} is found to be ~29.8 nm and is found to increase with Cu{sup 2+} doping. Progressive reduction in lattice parameter of Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} has been observed due to difference inmore » ionic radii of cations with improved Cu doping. Spinel cubic structure is further confirmed by Raman spectroscopy. Small shift in Raman modes towards higher wave number has been observed in doped Mg-Zn ferrites. The permittivity and dielectric loss decreases at lower doping and increases at higher order doping of Cu{sup 2+}.« less

Trace amounts of Cu²⁺ ions influence ROS production and cytotoxicity of ZnO quantum dots.

PubMed

Moussa, Hatem; Merlin, Christophe; Dezanet, Clément; Balan, Lavinia; Medjahdi, Ghouti; Ben-Attia, Mossadok; Schneider, Raphaël

2016-03-05

3-Aminopropyltrimethoxysilane (APTMS) was used as ligand to prepare ZnO@APTMS, Cu(2+)-doped ZnO (ZnO:Cu@APTMS) and ZnO quantum dots (QDs) with chemisorbed Cu(2+) ions at their surface (ZnO@APTMS/Cu). The dots have a diameter of ca. 5 nm and their crystalline and phase purities and composition were established by X-ray diffraction, transmission electron microscopy, UV-visible and fluorescence spectroscopies and by X-ray photoelectron spectroscopy. The effect of Cu(2+) location on the ability of the QDs to generate reactive oxygen species (ROS) under light irradiation was investigated. Results obtained demonstrate that all dots are able to produce ROS (OH, O2(-), H2O2 and (1)O2) and that ZnO@APTMS/Cu QDs generate more OH and O2(-) radicals and H2O2 than ZnO@APTMS and ZnO:Cu@APTMS QDs probably via mechanisms associating photo-induced charge carriers and Fenton reactions. In cytotoxicity experiments conducted in the dark or under light exposure, ZnO@APTMS/Cu QDs appeared slightly more deleterious to Escherichia coli cells than the two other QDs, therefore pointing out the importance of the presence of Cu(2+) ions at the periphery of the nanocrystals. On the other hand, with the lack of photo-induced toxicity, it can be inferred that ROS production cannot explain the cytotoxicity associated to the QDs. Our study demonstrates that both the production of ROS from ZnO QDs and their toxicity may be enhanced by chemisorbed Cu(2+) ions, which could be useful for medical or photocatalytic applications. Copyright © 2015 Elsevier B.V. All rights reserved.

Synthesis and characterization of Cu-Zn/TiO2 for the photocatalytic conversion of CO2 to methane.

PubMed

Rana, Adeem Ghaffar; Ahmad, Waqar; Al-Matar, Ali; Shawabkeh, Reyad; Aslam, Zaheer

2017-05-01

Different Cu-Zn/TiO 2 catalysts were synthesized by using the wet impregnation method. The prepared catalysts were used for the conversion of CO 2 into methane by photocatalysis. Various characterization techniques were used to observe the surface morphology, crystalline phase, Brunauer-Emmett-Teller (BET) surface area, presence of impregnated Cu and Zn, and functional group. Scanning electron microscope analysis showed spherical morphology, and slight agglomeration of catalyst particles was observed. BET analysis revealed that the surface area of the catalyst was decreased from 10 to 8.5 m 2 /g after impregnation of Cu and Zn over TiO 2 support. Synergetic effect of Cu and Zn over TiO 2 support (Cu 2.6 /TiO 2 , Zn 0.5 /TiO 2 and Cu 2.6 -Zn 0.5 /TiO 2 ) and the effects of Cu loading (0, 1.8, 2.1, 2.6 and 2.9 wt%) were also investigated at different feed molar ratios of H 2 /CO 2 (2:1 and 4:1). The Cu 2.6 -Zn 0.5 /TiO 2 catalyst showed a maximum conversion of 14.3% at a feed molar ratio of 4. The addition of Zn over the catalyst surface increased the conversion of CO 2 from 10% to 14.3% which might be due to synergy of Cu and Zn over TiO 2 support.

Influence of Cu Addition on the Structure, Mechanical and Corrosion Properties of Cast Mg-2%Zn Alloy

NASA Astrophysics Data System (ADS)

Lotfpour, M.; Emamy, M.; Dehghanian, C.; Tavighi, K.

2017-05-01

Effects of different concentrations of Cu on the structure, mechanical and corrosion properties of Mg-2%Zn alloy were studied by the use of x-ray diffraction, optical microscopy, scanning electron microscopy, energy dispersive spectroscopy, standard tensile testing, polarization and electrochemical impedance spectroscopy (EIS) measurements. The average grain size of the alloy decreased from above 1000 μm to about 200 μm with 5 wt.% Cu addition in as-cast condition. Microstructural studies revealed that Mg-2Zn- xCu alloys matrix typically consists of primary α-Mg and MgZnCu and Mg(Zn,Cu)2 intermetallics which are mainly found at the grain boundaries. The results obtained from mechanical testing ascertained that Cu addition increased the hardness values significantly. Although the addition of 0.5 wt.% Cu improved the ultimate tensile strength and elongation values, more Cu addition (i.e., 5 wt.%) weakened the tensile properties of the alloy by introducing semi-continuous network of brittle intermetallic phases. Based on polarization test results, it can be concluded that Cu eliminates a protective film on Mg-2%Zn alloy surface. Among Mg-2%Zn- x%Cu alloys, the one containing 0.1 wt.% Cu exhibited the best anti-corrosion property. However, further Cu addition increased the volume fraction of intermetallics culminating in corrosion rate enhancement due to the galvanic couple effect. EIS and microstructural analysis also confirmed the polarization results.

Electrochemical corrosion behavior, microstructure and magnetic properties of sintered Nd-Fe-B permanent magnet doped by CuZn5 powders

NASA Astrophysics Data System (ADS)

Liu, W. Q.; Wang, Z.; Sun, C.; Yue, M.; Liu, Y. Q.; Zhang, D. T.; Zhang, J. X.

2014-05-01

Nd-Fe-B permanent magnets with a small amount of CuZn5 powders doping were prepared by conventional sintered method. The effects of CuZn5 contents on magnetic properties and microstructure, electrochemical corrosion resistance of sintered Nd-Fe-B magnets were systematically studied. The results show that the magnetic properties of magnets do not have a significant variation by CuZn5 powders doping; the coercivity of magnets rises gradually, while the remanence of the magnets decreases a little with increasing of the CuZn5 amount. The CuZn5 doped magnets have more positive corrosion potential, Ecorr, and much lower corrosion current density, icorr, than the magnets without CuZn5 doping, indicating CuZn5 doping could improve the corrosion resistance. Both Zn and Cu enrich mainly into the Nd-rich phase, fully improve the wettability between the Nd-rich phase and the Nd2Fe14B phase, and repair the defects of the main phase, so the coercivity of magnets doped with CuZn5 powders rises. Such microstructure modification effectively restrains the aggressive inter-granular corrosion. As a result, the CuZn5 doped magnet possesses excellent corrosion resistance in NaCl electrolyte.

High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Maurya, Sandeep Kumar; Liu, Ya; Xu, Xiaojie; Woods-Robinson, Rachel; Das, Chandan; Ager, Joel W., III; Balasubramaniam, K. R.

2017-12-01

p-type transparent conducting Cu alloyed ZnS thin films from Cu{x} Zn{1-x} S targets (x = 0.1 , 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. x-ray diffraction and TEM-SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu2S phase. Conductivity values  ⩾400 S cm-1 were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S cm-1 obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be  ⩾75% at 550 nm. The transparent conductor figure of merit (ΦTC ) of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was  ≈276 μS .

Cu2O-tipped ZnO nanorods with enhanced photoelectrochemical performance for CO2 photoreduction

NASA Astrophysics Data System (ADS)

Iqbal, Muzaffar; Wang, Yanjie; Hu, Haifeng; He, Meng; Hassan Shah, Aamir; Lin, Lin; Li, Pan; Shao, Kunjuan; Reda Woldu, Abebe; He, Tao

2018-06-01

The design of Cu2O-tipped ZnO nanorods is proposed here aiming at enhanced photoelectrochemical properties. The tip-selective deposition of Cu2O is confirmed by scanning transmission electron microscopy (STEM). The photoinduced charge behavior like charge generation, separation and transport has been thoroughly studied by UV-vis absorption analysis and different photoelectrochemical characterizations, including transient photocurrent, incident photon-to-current efficiency (IPCE), electrochemical impedance spectroscopy (EIS), intensity-modulated photocurrent spectroscopy (IMPS), and Mott-Schottky measurements. The photoelectrochemical characterizations clearly indicate that ZnO/Cu2O structures exhibit much higher performance than pristine ZnO, due to the formation of p-n junction, as well as the tip selective growth of Cu2O on ZnO. Photocatalytic CO2 reduction in aqueous solution under UV-visible light illumination shows that CO is the main product, and with the increase of the Cu2O content in the heterostructure, the CO yield increases. This work shows that Cu2O-tipped ZnO nanorods possess improved behavior of charge generation, separation and transport, which may work as a potential candidate for photocatalytic CO2 reduction.

Influence of Li Addition to Zn-Al Alloys on Cu Substrate During Spreading Test and After Aging Treatment

NASA Astrophysics Data System (ADS)

Gancarz, Tomasz; Pstrus, Janusz; Cempura, Grzegorz; Berent, Katarzyna

2016-12-01

The spreading of Zn-Al eutectic-based alloys with 0.05 wt.%, 0.1 wt.%, and 0.2 wt.% Li on Cu substrate has been studied using the sessile drop method in presence of QJ201 flux. Wetting tests were performed after 1 min, 3 min, 8 min, 15 min, 30 min, and 60 min of contact at temperatures of 475°C, 500°C, 525°C, and 550°C. Samples after spreading at 500°C for 1 min were subjected to aging for 1 day, 10 days, and 30 days at temperature of 120°C, 170°C, and 250°C. The spreadability of eutectic Zn-5.3Al alloy with different Li contents on Cu substrate was determined in accordance with ISO 9455-10:2013-03. Selected solidified solder-substrate couples were, after spreading and aging tests, cross-sectioned and subjected to scanning electron microscopy, energy-dispersive spectroscopy (EDS), and x-ray diffraction (XRD) analysis of the interfacial microstructure. An experiment was designed to demonstrate the effect of Li addition on the kinetics of the formation and growth of CuZn, Cu5Zn8, and CuZn4 intermetallic compound (IMC) phases, during spreading and aging. The IMC layers formed at the interface were identified using XRD and EDS analyses. Increasing addition of Li to Zn-Al alloy caused a reduction in the thickness of the IMC layer at the interface during spreading, and an increase during aging. The activation energy was calculated, being found to increase for the Cu5Zn8 phase but decrease for the CuZn and CuZn4 phases with increasing Li content in the Zn-Al-Li alloys. The highest value of 142 kJ mol-1 was obtained for Zn-Al with 1.0 Li during spreading and 69.2 kJ mol-1 for Zn-Al with 0.05 Li during aging. Aging at 250°C caused an increase in only the Cu5Zn8 layer, which has the lowest Gibbs energy in the Cu-Zn system. This result is connected to the high diffusion of Cu from the substrate to the solder.

Application of 67Cu Produced by 68Zn(n,n'p+d)67Cu to Biodistribution Study in Tumor-Bearing Mice

NASA Astrophysics Data System (ADS)

Sugo, Yumi; Hashimoto, Kazuyuki; Kawabata, Masako; Saeki, Hideya; Sato, Shunichi; Tsukada, Kazuaki; Nagai, Yasuki

2017-02-01

67Cu produced by the 68Zn(n,n'p+d)67Cu reaction was used for the first time to determine the biodistribution of 67CuCl2 in colorectal tumor-bearing mice. A high uptake of 67Cu was observed in the tumor as well as in the liver and kidney, which are the major organs for copper metabolism. The result showing 67Cu accumulation in the tumor suggests that 67CuCl2 can be a potential radionuclide agent for cancer radiotherapy. It should also encourage further studies on the therapeutic effect on small animals using an increased dose of 67Cu produced by the 68Zn(n,n'p+d)67Cu reaction using presently available intense neutrons.

Salts affect the interaction of ZnO or CuO nanoparticles with wheat.

PubMed

Stewart, Jacob; Hansen, Trevor; McLean, Joan E; McManus, Paul; Das, Siddhartha; Britt, David W; Anderson, Anne J; Dimkpa, Christian O

2015-09-01

Exposure to nanoparticles (NPs) that release metals with potential phytotoxicity could pose problems in agriculture. The authors of the present study used growth in a model growth matrix, sand, to examine the influence of 5 mmol/kg of Na, K, or Ca (added as Cl salts) and root exudates on transformation and changes to the bioactivity of copper(II) oxide (CuO) and zinc oxide (ZnO) NPs on wheat. These salt levels are found in saline agricultural soils. After 14 d of seedling growth, particles with crystallinity typical of CuO or ZnO remained in the aqueous fraction from the sand; particles had negative surface charges that differed with NP type and salt, but salt did not alter particle agglomeration. Reduction in shoot and root elongation and lateral root induction by ZnO NPs were mitigated by all salts. However, whereas Na and K promoted Zn loading into shoots, Ca reduced loading, suggesting that competition with Zn ions for uptake occurred. With CuO NPs, plant growth and loading was modified equally by all salts, consistent with major interaction with the plant with CuO rather than Cu ions. Thus, for both NPs, loading into plant tissues was not solely dependent on ion solubility. These findings indicated that salts in agricultural soils could modify the phytotoxicity of NPs. © 2015 SETAC.

CuO and ZnO nanoparticles: phytotoxicity, metal speciation, and induction of oxidative stress in sand-grown wheat

NASA Astrophysics Data System (ADS)

Dimkpa, Christian O.; McLean, Joan E.; Latta, Drew E.; Manangón, Eliana; Britt, David W.; Johnson, William P.; Boyanov, Maxim I.; Anderson, Anne J.

2012-09-01

Metal oxide nanoparticles (NPs) are reported to impact plant growth in hydroponic systems. This study describes the impact of commercial CuO (<50 nm) and ZnO (<100 nm) NPs on wheat ( Triticum aestivum) grown in a solid matrix, sand. The NPs contained both metallic and non-metallic impurities to different extents. Dynamic light scattering and atomic force microscopy (AFM) assessments confirmed aggregation of the NPs to submicron sizes. AFM showed transformation of ZnO NPs from initial rhomboid shapes in water to elongated rods in the aqueous phase of the sand matrix. Solubilization of metals occurred in the sand at similar rates from CuO or ZnO NPs as their bulk equivalents. Amendment of the sand with 500 mg Cu and Zn/kg sand from the NPs significantly ( p = 0.05) reduced root growth, but only CuO NPs impaired shoot growth; growth reductions were less with the bulk amendments. Dissolved Cu from CuO NPs contributed to their phytotoxicity but Zn release did not account for the changes in plant growth. Bioaccumulation of Cu, mainly as CuO and Cu(I)-sulfur complexes, and Zn as Zn-phosphate was detected in the shoots of NP-challenged plants. Total Cu and Zn levels in shoot were similar whether NP or bulk materials were used. Oxidative stress in the NP-treated plants was evidenced by increased lipid peroxidation and oxidized glutathione in roots and decreased chlorophyll content in shoots; higher peroxidase and catalase activities were present in roots. These findings correlate with the NPs causing increased production of reactive oxygen species. The accumulation of Cu and Zn from NPs into edible plants has relevance to the food chain.

Luminescence study of ZnSe/PVA (polyvinyl alcohol) composite film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lahariya, Vikas

The ZnSe nanocrystals have been prepared into poly vinyl alcohol(PVA) polymer matrix on glass using ZnCl2 and Na2SeSO3 as zinc and selenium source respectively. Poly vinyl Alcohol (PVA) used as polymer matrix cum capping agent due to their high viscosity and water solubility. It is transparent for visible region and prevents Se- ions to photo oxidation. The ZnSe/PVA composite film was deposited on glass substrate. The film was characterized by X Ray Diffraction (XRD) and UV-Visible absorption Spectroscopy and Photoluminescence. The X Ray Diffraction (XRD) study confirms the nanometer size (10 nm) particle formation within PVA matrix with cubic zinc blendmore » crystal structure. The UV-Visible Absorption spectrum of ZnSe/PVA composite film shown blue shift in absorption edge indicating increased band gap due to quantum confinement. The calculated energy band gap from the absorption edge using Tauc relation is 3.4 eV. From the Photoluminescence study a broad peak at 435 nm has been observed in violet blue region due to recombination of surface states.« less

LEED and AES characterization of the GaAs(110)-ZnSe interface

NASA Technical Reports Server (NTRS)

Tu, D.-W.; Kahn, A.

1984-01-01

In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

Systems and methods for forming solar cells with CuInSe.sub.2 and Cu(In,Ga)Se.sub.2 films

DOEpatents

Albin, David S.; Vora, Nirav; Jimenez, Sebastian Caparros; Gutierrez, Joaquin Murillo; Cortezon, Emilio Sanchez; Romero, Manuel

2017-02-28

Systems and methods for forming solar cells with CuInSe.sub.2 and Cu(In,Ga)Se.sub.2 films are provided. In one embodiment, a method comprises: during a first stage (220), performing a mass transport through vapor transport of an indium chloride (InCl.sub.x) vapor (143, 223) and Se vapor (121, 225) to deposit a semiconductor film (212, 232, 252) upon a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) following the first stage (220), performing a mass transport through vapor transport of a copper chloride (CuCl.sub.x) vapor (143, 243) and Se vapor (121, 245) to the semiconductor film (212, 232, 252); and during a third stage (260) following the second stage (240), performing a mass transport through vapor transport of an indium chloride (InCl.sub.x) vapor (143, 263) and Se vapor (121, 265) to the semiconductor film (212, 232, 252).

Synthesis of colloidal Zn(Te,Se) alloy quantum dots

NASA Astrophysics Data System (ADS)

Asano, H.; Arai, K.; Kita, M.; Omata, T.

2017-10-01

Colloidal Zn(Te1-x Se x ) quantum dots (QDs), which are highly mismatched semiconductor alloys, were synthesized by the hot injection of an organometallic solution, and the composition and size dependence of their optical gap were studied together with the theoretical calculation using the finite-depth-well effective mass approximation. The optical gaps exhibited considerable negative deviation from the mole fraction weighted mean optical gaps of ZnTe and ZnSe, i.e. a large optical gap bowing was observed, similar to the bulk and thin-film alloys. The composition and size dependence of optical gaps agreed well with theoretically calculated ones employing a bowing parameter similar to that of the bulk alloys; therefore, the extent of the optical gap bowing in these alloy QDs is concluded to be the same as that in bulk and thin-film alloys. The optical gaps of Zn(Te1-x Se x ) QDs with diameters of 3.5-5 nm, where x ~ 0.35, were close to the energy corresponding to green light, indicating that those QDs are very promising as green QD-phosphors.

Catalytic conversion of syngas to mixed alcohols over Zn-Mn promoted Cu-Fe based catalyst

DOE PAGES

Lu, Yongwu; Yu, Fei; Hu, Jin; ...

2012-04-12

Zn-Mn promoted Cu-Fe based catalyst was synthesized by the co-precipitation method. Mixed alcohols synthesis from syngas was studied in a half-inch tubular reactor system after the catalyst was reduced. Zn-Mn promoted Cu-Fe based catalyst was characterized by SEM-EDS, TEM, XRD, and XPS. The liquid phase products (alcohol phase and hydrocarbon phase) were analyzed by GC-MS and the gas phase products were analyzed by GC. The results showed that Zn-Mn promoted Cu-Fe based catalyst had high catalytic activity and high alcohol selectivity. The maximal CO conversion rate was 72%, and the yield of alcohol and hydrocarbons were also very high. Cumore » (111) was the active site for mixed alcohols synthesis, Fe 2C (101) was the active site for olefin and paraffin synthesis. The reaction mechanism of mixed alcohols synthesis from syngas over Zn-Mn promoted Cu-Fe based catalyst was proposed. Here, Zn-Mn promoted Cu-Fe based catalyst can be regarded as a potential candidate for catalytic conversion of biomass-derived syngas to mixed alcohols.« less

Comparison of Antibacterial Effects of ZnO and CuO Nanoparticles Coated Brackets against Streptococcus Mutans.

PubMed

Ramazanzadeh, Baratali; Jahanbin, Arezoo; Yaghoubi, Masoud; Shahtahmassbi, Nasser; Ghazvini, Kiarash; Shakeri, Mohammadtaghi; Shafaee, Hooman

2015-09-01

During the orthodontic treatment, microbial plaques may accumulate around the brackets and cause caries, especially in high-risk patients. Finding ways to eliminate this microbial plaque seems to be essential. The aim of this study was to compare the antibacterial effects of nano copper oxide (CuO) and nano zinc oxide (ZnO) coated brackets against Streptococcus mutans (S.mutans) in order to decrease the risk of caries around the orthodontic brackets during the treatment. Sixty brackets were coated with nanoparticles of ZnO (n=20), CuO (n=20) and CuO-ZnO (n=20). Twelve uncoated brackets constituted the control group. The brackets were bonded to the crowns of extracted premolars, sterilized and prepared for antimicrobial tests (S.mutans ATCC35668). The samples taken after 0, 2, 4, 6 and 24 hours were cultured on agar plates. Colonies were counted 24 hours after incubation. One-way ANOVA and Tukey tests were used for statistical analysis. In CuO and CuO-ZnO coated brackets, no colony growth was seen after two hours. Between 0-6 hours, the mean colony counts were not significantly different between the ZnO and the control group (p>0.05). During 6-24 hours, the growth of S.mutans was significantly reduced by ZnO nanoparticles in comparison with the control group (p< 0.001). However, these bacteria were not totally eliminated. CuO and ZnO-CuO nanoparticles coated brackets have better antimicrobial effect on S.mutans than ZnO coated brackets.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

The optoelectronic properties and role of Cu concentration on the structural and electrical properties of Cu doped ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Omri, K.; Bettaibi, A.; Khirouni, K.; El Mir, L.

2018-05-01

In the current study, we synthesized a Cu-doped ZnO (CZO) nanoparticles material using a sol-gel method with different doping concentrations of Cu (0, 2, 3 and 4 at.%). The control of the Cu concentration on structural, electrical and optical properties of CZO nanoparticles was investigated in detail. The XRD analysis of the CZO nanoparticles reveals the formation of ZnO hexagonal wurtzite structure for all samples which confirm the incorporation of Cu2+ ions into the ZnO lattice by substitution. Furthermore, CZO nanoparticles showed a small red shift of absorption band with the incorporation of Cu from 0 to 4 at.%; i.e. a decreased band gap value from 3.34 eV to 3.27 eV with increasing of Cu doping content. The frequency dispersion of the electric conductivity were studied using the Jonscher universal power law, according to relation σ(ω) = σDC + A ωs(T). Alternative current conductivity increases with increasing Cu content in spite of the decrease the activation energy with copper loading. It was found that the conductivity reached its maximum value for critical Cu concentration of 3 at.%. The frequency relaxation phenomenon was also investigated and all results were discussed in term of the copper doping concentration.

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, R. F.; Burger, A.; Dudley, M.; Matyi, R.; Ramachandran, N.; Sha, Yi-Gao; Volz, M.; Shih, Hung-Dah

1999-01-01

Complete and systematic ground-based experimental and theoretical analyses on the Physical Vapor Transport (PVT) of ZnSe and related ternary compound semiconductors have been performed. The analyses included thermodynamics, mass flux, heat treatment of starting material, crystal growth, partial pressure measurements, optical interferometry, chemical analyses, photoluminescence, microscopy, x-ray diffraction and topography as well as theoretical, analytical and numerical analyses. The experimental results showed the influence of gravity orientation on the characteristics of: (1) the morphology of the as-grown crystals as well as the as-grown surface morphology of ZnSe and Cr doped ZnSe crystals; (2) the distribution of impurities and defects in ZnSe grown crystals; and (3) the axial segregation in ZnSeTe grown crystals.

Corrosion Behavior of Cu40Zn in Sulfide-Polluted 3.5% NaCl Solution

NASA Astrophysics Data System (ADS)

Song, Q. N.; Xu, N.; Bao, Y. F.; Jiang, Y. F.; Gu, W.; Yang, Z.; Zheng, Y. G.; Qiao, Y. X.

2017-10-01

The corrosion behavior of a duplex-phase brass Cu40Zn in clean and sulfide-polluted 3.5% NaCl solutions was investigated by conducting electrochemical and gravimetric measurements. The corrosion product films were analyzed by scanning electron microscopy, energy-dispersive spectroscopy and x-ray diffraction. The presence of sulfide shifted the corrosion potential of Cu40Zn toward a more negative value by 100 mV and increased the mass loss rate by a factor of 1.257 compared with the result in the clean solution. The corrosion product film in the clean solution was thin and compact; it mainly consisted of oxides, such as ZnO and Cu2O. By contrast, the film in the sulfide-polluted solution was thick and porous. It mainly contained sulfides and zinc hydroxide chloride (i.e., Zn5(OH)8Cl2·H2O). The presence of sulfide ions accelerated the corrosion damage of Cu40Zn by hindering the formation of protective oxides and promoting the formation of a defective film which consisted of sulfides and hydroxide chlorides.

Passivation of Cu-Zn alloy on low carbon steel electrodeposited from a pyrophosphate medium

NASA Astrophysics Data System (ADS)

Yavuz, Abdulcabbar; Yakup Hacıibrahimoğlu, M.; Bedir, Metin

2018-01-01

The motivation of this study is to understand whether zinc-based alloy also has a passivation behaviour similar to zinc itself. Cu-Zn alloys were electrodeposited potentiostatically from a pyrophosphate medium on a carbon steel electrode and their corrosion behaviours were studied. Pt and carbon steel electrodes were used in order to examine the corrosion/passivation behaviour of bare Cu, bare Zn and Cu-Zn alloy coatings. The passivation behaviour of all brass-modified electrodes having Zn content between 10% and 100% was investigated. The growth potential affects the morphology and structure of crystals. The brass coatings are more porous than their pure components. The crystalline structure of Cu-Zn alloys can be obtained by changing the deposition potential. The zinc content in brass increases when the deposition voltage applied decreases. However, the growth potential and the ratio of zinc in brass do not affect the passivation behaviour of the resulting alloys. The coatings obtained by applying different growth potentials were immersed in tap water for 24 h to compare their corrosion behaviours with carbon steel having pitting formation.

BiCuSeO Thermoelectrics: An Update on Recent Progress and Perspective

PubMed Central

Zhang, Xiaoxuan; Chang, Cheng; Zhou, Yiming; Zhao, Li-Dong

2017-01-01

A BiCuSeO system has been reported as a promising thermoelectric material and has attracted great attention in the thermoelectric community since 2010. Recently, several remarkable studies have been reported and the ZT of BiCuSeO was pushed to a higher level. It motivates us to systematically summarize the recent reports on the BiCuSeO system. In this short review, we start with several attempts to optimize thermoelectric properties of BiCuSeO. Then, we introduce several opinions to explore the origins of low thermal conductivity for BiCuSeO. Several approaches to enhance thermoelectric performance are also summarized, including modulation doping, introducing dual-vacancies, and dual-doping, etc. At last, we propose some possible strategies for enhancing thermoelectric performance of BiCuSeO in future research. PMID:28772557

ZnSe based semiconductor core-shell structures: From preparation to application

NASA Astrophysics Data System (ADS)

Sun, Chengcheng; Gu, Yarong; Wen, Weijia; Zhao, Lijuan

2018-07-01

Inorganic core-shell semiconductor materials have attracted increasing interest in recent years because of the unique structure, stable chemical properties and high performance in devices. With special properties such as a direct band-gap and excellent photoelectrical characteristics, ZnSe based semiconductor core-shell structures are promising materials for applications in such fields as photocatalysts, light-emitting diodes, solar cells, photodetectors, biomedical science and so on. However, few reviews on ZnSe based semiconductor core-shell structures have been reported so far. Therefore this manuscript mainly focuses on the research activities on ZnSe based semiconductor core-shell composites including various preparation methods and the applications of these core-shell structures, especially in photocatalysts, light emitting, solar cells and photodetectors. The possibilities and limitations of studies on ZnSe based semiconductor core-shell composites are also highlighted.

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction.

PubMed

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Phung, Pham Kim; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2016-01-01

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1-x)4 solid solutions

NASA Astrophysics Data System (ADS)

Levcenco, S.; Dumcenco, D.; Wang, Y. P.; Huang, Y. S.; Ho, C. H.; Arushanov, E.; Tezlevan, V.; Tiong, K. K.

2012-06-01

Single crystals of Cu2ZnSn(SxSe1-x)4 (CZTSSe) solid solutions were grown by chemical vapor transport technique using iodine trichloride as a transport agent. As confirmed by X-ray investigations, the as-grown CZTSSe solid solutions are single phase and crystallized in kesterite structure. The lattice parameters of CZTSSe were determined and the S contents of the obtained crystals were estimated by Vegard's law. The composition dependent band gaps of CZTSSe solid solutions were studied by electrolyte electroreflectance (EER) measurements at room temperature. From a detailed lineshape fit of the EER spectra, the band gaps of CZTSSe were determined accurately and were found to decrease almost linearly with the increase of Se content, which agreed well with the recent theoretical first-principle calculations by S. Chen, A. Walsh, J.H. Yang, X.G. Gong, L. Sun, P. X. Yang, J.H. Chu, S.H. Wei, Phys. Rev. B 83 (2011) 125201 (5pp).

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

Synthesis of Cu{sub 2}ZnSnS{sub 4} nanoparticles and controlling the morphology with polyethylene glycol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rawat, Kusum; Department of Electronic Science, University of Delhi South Campus, Delhi 110021; Kim, Hee-Joon

Highlights: • Cu{sub 2}ZnSnS{sub 4} nanoparticles were synthesized by wet chemical technique. • First report on the effect of using polyethylene glycol as a structure directing agent on Cu{sub 2}ZnSnS{sub 4} nanoparticles. • The morphology of Cu{sub 2}ZnSnS{sub 4} nanoparticles changes into nanoflakes and nanorods structures with polyethylene glycol concentration. • Polyethylene glycol assisted Cu{sub 2}ZnSnS{sub 4} nanoparticle film exhibits optical bandgap of 1.5 eV which is suitable for the application in solar cells. - Abstract: Cu{sub 2}ZnSnS{sub 4} nanoparticles were synthesized by wet chemical technique using metal thiourea precursor at 250 °C. The structural and morphological properties of asmore » grown nanoparticles have been characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy. The influence of different concentration of polyethylene glycol as structure directing agent on the morphologies of Cu{sub 2}ZnSnS{sub 4} nanoparticles are investigated on thin films deposited by spin coating technique. The mean crystallite size of the Cu{sub 2}ZnSnS{sub 4} nanoparticles was found to improve with polyethylene glycol concentration. Scanning electron microscopy images of Cu{sub 2}ZnSnS{sub 4} revealed aggregated spherical shaped nanoparticles whereas the polyethylene glycol assisted Cu{sub 2}ZnSnS{sub 4} nanoparticle films show nanoflakes and nanorods structures with increasing concentration of polyethylene glycol. Transmission electron microscopy analysis has also been performed to determine the size and structure of nanorods. UV–vis absorption spectroscopy shows the broad band absorption with optical bandgap of 1.50 eV for polyethylene glycol assisted Cu{sub 2}ZnSnS{sub 4} films.« less

Structural and optical properties of ZnSe:Eu/ZnS quantum dots depending on interfacial residual europium

NASA Astrophysics Data System (ADS)

Park, Ji Young; Lee, Chan Gi; Seo, Han Wook; Jeong, Da-Woon; Kim, Min Young; Kim, Woo-Byoung; Kim, Bum Sung

2018-01-01

A multimodal emitter comprising of ZnSe:Eu/ZnS (core/shell) quantum dots (QDs) by adding a ZnS precursor in situ during synthesis. ZnSe/Eu2+/Eu3+/ZnS actives both core and core/shell. QDs prepared with the ZnS precursor displayed a luminescence intensity three times that of ZnSe QDs due to the passivation effect of the Shell. While the core QDs display the 450-550 nm emission of Eu2+ (4F65D1 → 4F7), the core/shell system showed no Eu2+ emission but only the sharp peaks in the red at 579, 592, 615, 651, and 700 nm due to the electronic transitions of 5D0 → 7Fn (n = 0-4) depending on leisurely decreased with increased reaction time. These results are in agreement with Eu 3d spectra of XPS analysis results. Microscopic analyses show that the core and core/shell QDs both have a zinc blende structure, and their respective sizes were about 3.19 and 3.44 nm. The lattice constant in the central portion of the core/shell QDs are around d111 = 3.13 Å, which is between the outside and inside ring patterns (d111 = 3.27 and 3.07 Å, respectively). This shows the effective over-capping of shell onto the core QDs. The core/shell structure may contain Eu2O3 bonding the over-coated ZnS surface on the Eu3+-doped ZnSe core.

On the response of alloyed ZnCdSeS quantum dot films

NASA Astrophysics Data System (ADS)

Valais, I.; Michail, C.; Fountzoula, C.; Tseles, D.; Yannakopoulos, P.; Nikolopoulos, D.; Bakas, A.; Fountos, G.; Saatsakis, G.; Sianoudis, I.; Kandarakis, I.; Panayiotakis, G.

The aim of this work was to prepare composite ZnCdSeS quantum dot (QD) flexible films and to examine their optical properties under ultraviolet excitation. PMMA/QD ZnCdSeS composite films, with emission covering the visual spectrum (480-630 nm) were prepared with concentrations 10 mg/mL and 20 mg/mL by homogenously diluting dry powder QD samples in toluene and subsequently mixing with a PMMA/MMA polymer solution to the final ZnCdSeS/Toluene mixture. Scanning electron microscopy (SEM) images of the produced films were obtained. The ZnCdSeS films were excited by ultraviolet light of varying intensities and the spectral matching with various optical detectors was estimated.

Thermally evaporated Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, K.; Gunawan, O.; Todorov, T.; Shin, B.; Chey, S. J.; Bojarczuk, N. A.; Mitzi, D.; Guha, S.

2010-10-01

High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1 μm and annealing times in the minutes. Detailed electrical analysis of the devices indicate that the performance of the devices is limited by high series resistance, a "double diode" behavior of the current voltage characteristics, and an open circuit voltage that is limited by a carrier recombination process with an activation energy below the band gap of the material.

Synthesis of CuInSe2 nanocrystals using a continuous hot-injection microreactor

NASA Astrophysics Data System (ADS)

Jin, Hyung Dae; Chang, Chih-Hung

2012-10-01

A very rapid and simple synthesis of CuInSe2 nanocrystals (NCs) was successfully performed using a continuous hot-injection microreactor with a high throughput per reactor volume. It was found that copper-rich CuInSe2 with a sphalerite structure was formed initially followed by the formation of more ordered CuInSe2 at longer reaction times along with the formation of Cu2Se and In2Se3. Binary syntheses were performed and the results show a much faster formation rate of Cu2Se than In2Se3. The rate limiting step in the formation of CuInSe2 is forming the In2Se3 intermediate. Rapid synthesis of stoichiometric CuInSe2 NCs using a continuous-flow microreactor was accomplished by properly adjusting the Cu/In precursor ratio. Tuning the ratio of coordinating solvents can cause size differences from 2.6 to 4.1 nm, bandgaps from 1.1 to 1.3 eV, and different production yields of NCs. The highest production yield as determined by weight was achieved up to 660 mg/h using a microreactor with a small volume of 3.2 cm3.

Stacking of ZnSe/ZnCdSe Multi-Quantum Wells on GaAs (100) by Epitaxial Lift-Off

NASA Astrophysics Data System (ADS)

Eldose, N. M.; Zhu, J.; Mavridi, N.; Prior, Kevin; Moug, R. T.

2018-05-01

Here we present stacking of GaAs/ZnSe/ZnCdSe single-quantum well (QW) structures using epitaxial lift-off (ELO). Molecular beam epitaxy (MBE)-grown II-VI QW structure was lifted using our standard ELO technique. The QW structures were transferred onto glass plates and then subsequent layers stacked on top of each other to form a triple-QW structure. This was compared to an MBE-grown multiple-QW (MQW) structure of similar design. Low-temperature (77 K) photoluminescence (PL) spectroscopy was used to compare the two structures and showed no obvious degradation of the ELO stacked layer. It was observed that by stacking the single QW layer on itself we could increase the PL emission intensity beyond that of the grown MQW structure while maintaining narrow line width.

Ab initio investigation on hydrogen adsorption capability in Zn and Cu-based metal organic frameworks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanuwijaya, V. V., E-mail: viny.veronika@gmail.com; Hidayat, N. N., E-mail: avantgarde.vee@gmail.com; Agusta, M. K., E-mail: kemal@fti.itb.ac.id

2015-09-30

One of the biggest challenge in material technology for hydrogen storage application is to increase hydrogen uptake in room temperature and pressure. As a class of highly porous material, Metal-Organic Frameworks (MOF) holds great potential with its tunable structure. However, little is known about the effect of metal cluster to its hydrogen storage capability. Investigation on this matter has been carried out carefully on small cluster of Zn and Cu-based MOF using first principles method. The calculation of two distinct building units of MOFs, namely octahedral and paddle-wheel models, have been done with B3LYP density functional method using 6-31G(d,p) andmore » LANL2DZ basis sets. From geometry optimization of Zn-based MOF linked by benzene-dicarboxylate (MOF-5), it is found that hydrogen tends to keep distance from metal cluster group and stays above benzene ring. In the other hand, hydrogen molecule prefers to stay atop of the exposed Cu atom in Cu-based MOF system linked by the same linker group (Cu-bdc). Calculated hydrogen binding enthalpies for Zn and Cu octahedral cages at ZnO{sub 3} sites are 1.64kJ/mol and 2.73kJ/mol respectively, while hydrogen binding enthalpies for Zn and Cu paddle-wheel cages calculated on top of metal atoms are found to be at 6.05kJ/mol and 6.10kJ/mol respectively. Major difference between Zn-MOF-5 and Cu-bdc hydrogen uptake performance might be caused by unsaturated metal sites present in Cu-bdc system and the influence of their geometric structures, although a small difference on binding energy in the type of transition metal used is also observed. The comparison between Zn and Cu-based MOF may contribute to a comprehensive understanding of metal clusters and the importance of selecting best transition metal for design and synthesis of metal-organic frameworks.« less

Intrinsically Radioactive [64Cu]CuInS/ZnS Quantum Dots for PET and Optical Imaging: Improved Radiochemical Stability and Controllable Cerenkov Luminescence

PubMed Central

2015-01-01

Functionalized quantum dots (QDs) have been widely explored for multimodality bioimaging and proven to be versatile agents. Attaching positron-emitting radioisotopes onto QDs not only endows their positron emission tomography (PET) functionality, but also results in self-illuminating QDs, with no need for an external light source, by Cerenkov resonance energy transfer (CRET). Traditional chelation methods have been used to incorporate the radionuclide, but these methods are compromised by the potential for loss of radionuclide due to cleavage of the linker between particle and chelator, decomplexation of the metal, and possible altered pharmacokinetics of nanomaterials. Herein, we described a straightforward synthesis of intrinsically radioactive [64Cu]CuInS/ZnS QDs by directly incorporating 64Cu into CuInS/ZnS nanostructure with 64CuCl2 as synthesis precursor. The [64Cu]CuInS/ZnS QDs demonstrated excellent radiochemical stability with less than 3% free 64Cu detected even after exposure to serum containing EDTA (5 mM) for 24 h. PEGylation can be achieved in situ during synthesis, and the PEGylated radioactive QDs showed high tumor uptake (10.8% ID/g) in a U87MG mouse xenograft model. CRET efficiency was studied as a function of concentration and 64Cu radioactivity concentration. These [64Cu]CuInS/ZnS QDs were successfully applied as an efficient PET/self-illuminating luminescence in vivo imaging agents. PMID:25549258

Intrinsically radioactive [64Cu]CuInS/ZnS quantum dots for PET and optical imaging: improved radiochemical stability and controllable Cerenkov luminescence.

PubMed

Guo, Weisheng; Sun, Xiaolian; Jacobson, Orit; Yan, Xuefeng; Min, Kyunghyun; Srivatsan, Avinash; Niu, Gang; Kiesewetter, Dale O; Chang, Jin; Chen, Xiaoyuan

2015-01-27

Functionalized quantum dots (QDs) have been widely explored for multimodality bioimaging and proven to be versatile agents. Attaching positron-emitting radioisotopes onto QDs not only endows their positron emission tomography (PET) functionality, but also results in self-illuminating QDs, with no need for an external light source, by Cerenkov resonance energy transfer (CRET). Traditional chelation methods have been used to incorporate the radionuclide, but these methods are compromised by the potential for loss of radionuclide due to cleavage of the linker between particle and chelator, decomplexation of the metal, and possible altered pharmacokinetics of nanomaterials. Herein, we described a straightforward synthesis of intrinsically radioactive [(64)Cu]CuInS/ZnS QDs by directly incorporating (64)Cu into CuInS/ZnS nanostructure with (64)CuCl2 as synthesis precursor. The [(64)Cu]CuInS/ZnS QDs demonstrated excellent radiochemical stability with less than 3% free (64)Cu detected even after exposure to serum containing EDTA (5 mM) for 24 h. PEGylation can be achieved in situ during synthesis, and the PEGylated radioactive QDs showed high tumor uptake (10.8% ID/g) in a U87MG mouse xenograft model. CRET efficiency was studied as a function of concentration and (64)Cu radioactivity concentration. These [(64)Cu]CuInS/ZnS QDs were successfully applied as an efficient PET/self-illuminating luminescence in vivo imaging agents.

Zn and Cu isotopes as tracers of anthropogenic contamination in a sediment core from an urban lake

USGS Publications Warehouse

Thapalia, Anita; Borrok, David M.; Van Metre, Peter C.; Musgrove, MaryLynn; Landa, Edward R.

2010-01-01

In this work, we use stable Zn and Cu isotopes to identify the sources and timing of the deposition of these metals in a sediment core from Lake Ballinger near Seattle, Washington, USA. The base of the Lake Ballinger core predates settlement in the region, while the upper sections record the effects of atmospheric emissions from a nearby smelter and rapid urbanization of the watershed. δ66Zn and δ65Cu varied by 0.50‰ and 0.29‰, respectively, over the 500 year core record. Isotopic changes were correlated with the presmelter period (∼1450 to 1900 with δ66Zn = +0.39‰ ± 0.09‰ and δ65Cu = +0.77‰ ± 0.06‰), period of smelter operation (1900 to 1985 with δ66Zn = +0.14 ± 0.06‰ and δ65Cu = +0.94 ± 0.10‰), and postsmelting/stable urban land use period (post 1985 with δ66Zn = 0.00 ± 0.10‰ and δ65Cu = +0.82‰ ± 0.12‰). Rapid early urbanization during the post World War II era increased metal loading to the lake but did not significantly alter the δ66Zn and δ65Cu, suggesting that increased metal loads during this time were derived mainly from mobilization of historically contaminated soils. Urban sources of Cu and Zn were dominant since the smelter closed in the 1980s, and the δ66Zn measured in tire samples suggests tire wear is a likely source of Zn.

Fe{sub 3}O{sub 4}/CuO/ZnO/Nano graphene platelets (Fe{sub 3}O{sub 4}/CuO/ZnO/NGP) composites prepared by sol-gel method with enhanced sonocatalytic activity for the removal of dye

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendry, Tju; Taufik, Ardiansyah; Saleh, Rosari, E-mail: rosari.saleh@gmail.com, E-mail: rosari.saleh@ui.ac.id

2016-04-19

In this study, an attempt has been made to synthesize nanographene platelets coupled with Fe3O4/CuO/ZnO (Fe3O4/CuO/ZnO/NGP) with various ZnO loadings using a two step methods, sol-gel followed by hydrothermal method. Characterization was carried out by X-ray diffraction, energy-dispersive X-ray spectroscopy and vibrating sample magnetometer. The sonocatalytic performance was evaluated by degradation of methylene blue under ultrasonic irradiation.The Fe3O4/CuO/ZnO/NGP showed superior sonocatalytic activity than the Fe3O4/CuO/ZnO materials. They also showed high stability and can be easily separated from the reaction system for recycling process.

Laser generation in polycrystalline Cr{sup 2+}:ZnSe with undoped faces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savin, D V; Gavrishchuk, E M; Ikonnikov, V B

2015-01-31

An original method has been suggested for producing polycrystalline Cr{sup 2+}:ZnSe samples with undoped faces. Generation characteristics of a Cr{sup 2+}:ZnSe laser are studied under pulse-periodic pumping by a Tm{sup 3+}:YLF-laser. The efficiency of converting the pump radiation into laser generation at a wavelength of 2350 nm is 20%. Cr{sup 2+}:ZnSe samples exhibit high resistance to surface breakdown. (lasers)

The chemisorption and reactions of formic acid on Cu films on ZnO (000 overline1)-O

NASA Astrophysics Data System (ADS)

Ludviksson, A.; Zhang, R.; Campbell, Charles T.; Griffiths, K.

1994-06-01

The adsorption and reactions of formic acid (HCOOD : HCOOH = 3:1) on the oxygen-terminated ZnO(0001¯)-O surface and on thin Cu films deposited on the ZnO(0001¯)-O surface have been studied with temperature programmed desorption (TPD) and XPS. Small amounts of formic acid dissociate at defect sites on clean ZnO(0001¯)-O to yield surface formate (HCOO). The acid D(H) from this dissociation does not reappear in TPD, and is lost to the ZnO bulk, as confirmed by nuclear reaction analysis. The surface HCOO decomposes to yield nearly simultaneous CO 2 (37%), CO (63%) and H 2 TPD peaks at 560 K. Substantial amounts of D (˜ 20%) are incorporated in this hydrogen TPD peak resulting from formate decomposition at ZnO defects, indicating that bulk D is readily accessible. Submonolayer and multilayer Cu films that are deposited at 130 K and partially cover the ZnO surface as 2D and 3D islands adsorb formic acid and decompose it into formate and hydrogen much like the Cu(110) surface. The surface formate from the Cu film decomposes at 470-500 K to give primarily CO 2 and H 2, also much like Cu(110), although atom-thin Cu islands also give ˜ 40% CO. Annealed Cu films give formate decomposition peaks at 25-50 K lower in temperature, attributed to thickening and ordering of the Cu islands to form Cu(111)-like sites. The acid D(H) atom from the formic acid is partially lost by hydrogen spillover from the Cu islands into the ZnO substrate, especially for thin Cu films. This effect partially desorbs and is enhanced upon preannealing the Cu layers, due to increased H diffusion rates across the annealed Cu islands, and/or the decrease in island size. Bulk D(H) is slowly removed as D 2, HD and H 2 above 400 K in diffusion-limited desorption, catalyzed by Cu.

Nanocrystal growth and morphology of PbTeSe-ZnSe composite thin films prepared by one-step synthesis method

NASA Astrophysics Data System (ADS)

Sato, Kazuhisa; Abe, Seishi

2016-10-01

The microstructure of polycrystalline PbTe1-xSex-ZnSe composite thin films has been studied by scanning transmission electron microscopy and electron diffraction. The films were prepared by the one-step synthesis method using simultaneous evaporation of PbTe and ZnSe. The nanocrystals of PbTe1-xSex are formed in a ZnSe matrix. Tellurium concentration can be tuned by controlling the PbTe evaporation source temperatures between 753 K and 793 K. Binary PbSe nanocrystals were formed at 753 K, while ternary PbTe1-xSex nanocrystals were formed at 793 K. The nanocrystals grow in a granular shape at the initial stage of film growth, and the morphology changes to nanowire-shape as the film grows, irrespective of the Te concentration. The ternary PbTe1-xSex nanocrystals were composed of two phases with different Te concentration; Te-rich (Se-poor) granular crystals were formed near the bottom half parts of the film and Te-poor (Se-rich) nanowires were formed at the upper half parts of the film. Columnar ZnSe crystals contain high-density {111} stacking faults due to the low stacking fault energy of ZnSe. A balance of deposition and re-evaporation on the substrate during the film growth will be responsible for the resultant nanocrystal morphology.

Coupled mobilization of dissolved organic matter and metals (Cu and Zn) in soil columns

NASA Astrophysics Data System (ADS)

Zhao, Lu Y. L.; Schulin, Rainer; Weng, Liping; Nowack, Bernd

2007-07-01

Dissolved organic carbon (DOC) is a key component involved in metal displacement in soils. In this study, we investigated the concentration profiles of soil-borne DOC, Cu and Zn at various irrigation rates with synthetic rain water under quasi steady-state conditions, using repacked soil columns with a metal-polluted topsoil and two unpolluted subsoils. Soil solution was collected using suction cups installed at centimeter intervals over depth. In the topsoil the concentrations of DOC, dissolved metals (Zn and Cu), major cations (Ca 2+ and Mg 2+) and anions ( NO3- and SO42-) increased with depth. In the subsoil, the Cu and Zn concentrations dropped to background levels within 2 cm. All compounds were much faster mobilized in the first 4 cm than in the rest of the topsoil. DOC and Cu concentrations were higher at higher flow rates for a given depth, whereas the concentrations of the other ions decreased with increasing flow rate. The decomposition of soil organic matter resulted in the formation of DOC, SO42-, and NO3- and was the main driver of the system. Regression analysis indicated that Cu mobilization was governed by DOC, whereas Zn mobilization was primarily determined by Ca and to a lesser extent by DOC. Labile Zn and Cu 2+ concentrations were well predicted by the NICA-Donnan model. The results highlight the value of high-resolution in-situ measurements of DOC and metal mobilization in soil profiles.

A Novel and Functional Single-Layer Sheet of ZnSe

DOE PAGES

Zhou, Jia; Sumpter, Bobby G.; Kent, Paul R. C.; ...

2014-12-23

In this Communication, we report a novel singlelayer sheet of ZnSe, with a three-atomic thickness, which demonstrates a strong quantum confinement effect by exhibiting a large blue shift of 2.0 eV in its absorption edge relative to the zinc blende (ZB) bulk phase. Theoretical optical absorbance shows that the largest absorption of this ultrathin single-layer sheet of ZnSe occurs at a wavelength similar to its four-atom-thick doublelayer counterpart but with higher photoabsorption efficiency, suggesting a superior behavior on incident photon-to-current conversion efficiency for solar water splitting, among other potential applications. The results presented herein for ZnSe may be generalized tomore » other group II-VI analogues.« less

Mechanical Properties of ZnSe for the FEANICS Module

NASA Technical Reports Server (NTRS)

Salem, Jon

2006-01-01

Mechanical and physical properties of ZnSe windows to be used with the FEANICS (Flow Enclosure Accommodating Novel Investigations in Combustion of Solids) experiments were measured in order to determine design allowables. In addition, the literature on crack growth properties was summarized. The average Young's modulus, Poisson's ratio, equibiaxial fracture strength, flaw size, grain size, Knoop hardness, Vicker's hardness, and branching constant were 74.3 +/- 0.1 GPa, 0.31, 57.8 +/- 6.5 MPa, 21 4 mm, 43 +/- 9 micron, 0.97 +/- 0.02 GPa, 0.97 +/- 0.02 GPa, and 1.0 +/- 0.1 MPam(exp 0.5), respectively. The properties of current ZnSe made by chemical vapor deposition are in good agreement with those measured in the 1970's. The hardness of CVD ZnSe windows is about one twentieth of the sapphire window being replaced, and about one-sixth of that of window glass. Thus the ZnSe window must be handled with great care. The large grain size relative to the inherent crack size implies the need to use single crystal crack growth properties in the design process. In order to determine the local failure stresses in one of the test specimens, a solution for the stresses between the support ring and the edge of a circular plate load between concentric rings was derived.

Fibroblast responses and antibacterial activity of Cu and Zn co-doped TiO2 for percutaneous implants

NASA Astrophysics Data System (ADS)

Zhang, Lan; Guo, Jiaqi; Yan, Ting; Han, Yong

2018-03-01

In order to enhance skin integration and antibacterial activity of Ti percutaneous implants, microporous TiO2 coatings co-doped with different doses of Cu2+ and Zn2+ were directly fabricated on Ti via micro-arc oxidation (MAO). The structures of coatings were investigated; the behaviors of fibroblasts (L-929) as well as the response of Staphylococcus aureus (S. aureus) were evaluated. During the MAO process, a large number of micro-arc discharges forming on Ti performed as penetrating channels; O2-, Ca2+, Zn2+, Cu2+ and PO43- delivered via the channels, giving rise to the formation of doped TiO2. Surface characteristics including phase component, topography, surface roughness and wettability were almost the same for different coatings, whereas, the amount of Cu doped in TiO2 decreased with the increased Zn amount. Compared with Cu single-doped TiO2 (0.77 Wt% Cu), the co-doped with appropriate amounts of Cu and Zn, for example, 0.55 Wt% Cu and 2.53 Wt% Zn, further improved proliferation of L-929, facilitated fibroblasts to switch to fibrotic phenotype, and enhanced synthesis of collagen I as well as the extracellular collagen secretion; the antibacterial properties including contact-killing and release-killing were also enhanced. By analyzing the relationship of Cu/Zn amount in TiO2 and the behaviors of L-929 and S. aureus, it can be deduced that when the doped Zn is in a low dose (<1.79 Wt%), the behaviors of L-929 and S. aureus are sensitive to the reduced amount of Cu2+, whereas, Zn2+ plays a key role in accelerating fibroblast functions and reducing S. aureus when its dose obviously increases from 2.63 to 6.47 Wt%.