Germanate Glass Fiber Lasers for High Power

DTIC Science & Technology

2016-01-04

melting in the lab. KGe027: 60GeO2-a PbO-b La2O3-c Na2O (GPLN1) KGe028: 56GeO2-d PbO-e Ga2O3 -f Na2O (GPGN2) KGe029: 55GeO2-g PbO-h BaO-I ZnO-j K2O...Raw materials in the form of powder with high purity (GeO2 – 99.999%, PbO – 99.99%, Ga2O3 – 99.995 and Na2CO3 – 99.997%) were used. Batched samples...analysis techniques, this 18 month project by a team of researchers found that germanate based on 56%GeO2-31%PbO-4% Ga2O3 -9%Na2O (GPGN) had the lowest

Energy, angular and spatial distributions of primary electrons inside photoconducting materials for digital mammography: Monte Carlo simulation studies.

PubMed

Sakellaris, T; Spyrou, G; Tzanakos, G; Panayiotakis, G

2007-11-07

Materials such as a-Se, a-As(2)Se(3), GaSe, GaAs, Ge, CdTe, CdZnTe, Cd(0.8)Zn(0.2)Te, ZnTe, PbO, TlBr, PbI(2) and HgI(2) are potential candidates as photoconductors in direct detectors for digital mammography. The x-ray induced primary electrons inside a photoconductor's bulk comprise the initial signal that propagates and forms the final signal (image) on the detector's electrodes. An already developed model for a-Se has been properly extended to simulate the primary electron production in the materials mentioned. Primary electron characteristics, such as their energy, angular and spatial distributions that strongly influence the characteristics of the final image, were studied for both monoenergetic and polyenergetic x-ray spectra in the mammographic energy range. The characteristic feature in the electron energy distributions for PbI(2) and HgI(2) is the atomic deexcitation peaks, whereas for the rest of the materials their shape can also be influenced by the electrons produced from primary photons. The electrons have a small tendency to be forward ejected whereas they prefer to be ejected perpendicular (theta = pi/2) to the incident beam's axis and at two lobes around phi = 0 and phi = pi. At practical mammographic energies (15-40 keV) a-Se, a-As(2)Se(3) and Ge have the minimum azimuthal uniformity whereas CdZnTe, Cd(0.8)Zn(0.2)Te and CdTe the maximum one. The spatial distributions for a-Se, a-As(2)Se(3), GaSe, GaAs, Ge, PbO and TlBr are almost independent of the polyenergetic spectrum, while those for CdTe, CdZnTe, Cd(0.8)Zn(0.2)Te, ZnTe, PbI(2) and HgI(2) have a spectrum dependence. In the practical mammographic energy range and at this primitive stage of primary electron production, a-Se has the best inherent spatial resolution as compared to the rest of the photoconductors. PbO has the minimum bulk space in which electrons can be produced whereas CdTe has the maximum one.

Nuclear Data Sheets for A=85

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Balraj; Chen, Jun

2014-02-01

Evaluated experimental data are presented for 13 known nuclides of mass 85 (Zn, Ga, Ge, As, Se, Br, Kr, Rb, Sr, Y, Zr, Nb, Mo). Since the previous 1990 evaluation of A=85, {sup 85}Zn, {sup 85}Ga, {sup 85}Ge and {sup 85}nuclides are newly added here. Excited state data for {sup 85}Se, {sup 85}Zr have become available from radioactive decay and in–beam γ–ray studies. New and improved high–spin data are available for {sup 85}Br, {sup 85}Kr, {sup 85}Rb, {sup 85}Y, {sup 85}Nb and {sup 85}Mo. New direct and precise measurement of atomic masses of {sup 85}Ge, {sup 85}As, {sup 85}Se, {supmore » 85}Br, {sup 85}Rb, {sup 85}Zr, {sup 85}Nb and {sup 85}Mo have greatly improved the landscape of β decay–Q values and separation energies in this mass region. In spite of extensive experimental work on the isobaric nuclei of this mass chain several deficiencies remain. No excited states are known in {sup 85}Zn, {sup 85}Ga, {sup 85}As. Only a few excited state are assigned in {sup 85}Ge from {sup 85}Ga β– decay. From radioactivity studies, the decay schemes of {sup 85}Zn and {sup 85}Mo are not known, and those for {sup 85}Ga, {sup 85}Ge, {sup 85}As and 10.9–s isomer of {sup 85}Zr are incomplete. Level lifetimes are not known for excited states in {sup 85}Se, {sup 85}Br, {sup 85}Nb and {sup 85}Mo. The {sup 85}Tc nuclide has not been detected in fragmentation experiments at GANIL, alluding to its unbound nature for proton emission. The {sup 85}Kr, {sup 85}Rb, {sup 85}Sr, and {sup 85}Y nuclides remain the most extensively studied from many different reactions and decays. The evaluation of A=85 nuclides has been done after a span of 23 years, thus includes an extensive amount of new data for almost each nuclide. This work supersedes the data for A=85 nuclides presented in earlier full NDS publication by J. Tepel in 1980Te04 and a later one published in an update mode by H. Sievers in 1991Si01.« less

Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Furubayashi, T., E-mail: furubayashi.takao@nims.go.jp; Takahashi, Y. K.; Sasaki, T. T.

2015-10-28

Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu{sub 52.4}Zn{sub 47.6} for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ·μm{sup 2} for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hardmore » disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/CuZn interfaces.« less

Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

NASA Astrophysics Data System (ADS)

Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

2018-05-01

The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

Nuclear Data Sheets for A=62

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nichols A. L.; Tuli J.; Nichols,A.L.

Experimental nuclear spectroscopic data for known nuclides of mass number 62 (Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge) have been evaluated and presented together with adopted properties of levels and {gamma} rays. New high-spin data are available for {sup 62}Ga, and {sup 62}Zn. Results of in-beam {gamma}-ray studies for {sup 62}Cu producing high-spin states are in conflict in terms of gamma-ray placements and branching ratios. In the opinion of the evaluators, a detailed study of high-spin structures in {sup 62}Cu is needed to obtain a consistent and confident level scheme. Precise studies of superallowed {beta} decaymore » of {sup 62}Ga to {sup 62}Zn by several groups have extended the decay scheme. No significant new data, since the 2000 NDS for A = 62 (2000Hu18), have been reported for {sup 62}Co, {sup 62}Ni and {sup 62}Cu. No data are yet available for excited states in {sup 62}Ti and {sup 62}V, and those for {sup 62}Cr and {sup 62}Ge are scarce. The level lifetime data are available in very few cases. The radioactive decay schemes of {sup 62}Ti and {sup 62}Ge are unknown, and those for {sup 62}V, {sup 62}Cr and 92-ms {sup 62}Mn are scantily known. The data presented here supersede those in the earlier NDS publications.« less

Radiation resistance of nonlinear crystals at a wavelength of 9.55 {mu}m

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andreev, Yu M; Voevodin, V G; Badikov, Valerii V

2001-12-31

The results of radiation resistance measurements for twelve nonlinear crystals are presented. The crystals include the well-known nonlinear CdGeAs{sub 2}, ZnGeP{sub 2}, AgGaSe{sub 2}, GaSe, AgGaS{sub 2}, and Ag{sub 3}AsS{sub 3} crystals operating in the middle IR range, new mixed AgGaGeS{sub 4} and Cd{sub 0.35}Hg{sub 0.65}Ga{sub 2}S{sub 4} crystals, two-phase (orange and yellow) HgGa{sub 2}S{sub 4} crystal, and the doped GaSe:In crystal. The mixed crystals and the two-phase HgGa{sub 2}S{sub 4} crystal are transparent in the range from 0.4 - 0.5 to 11.5 - 14.5 {mu}m. The measurements were performed using a pulsed single-mode highly stability TEA CO{sub 2} lasermore » with an output pulse duration of {approx}30 ns. The damage thresholds of new nonlinear AgGaGeS{sub 4} and Cd {sub 0.35}Hg{sub 0.65}Ga{sub 2}S{sub 4} crystals and of the HgGa{sub 2}S{sub 4} crystal (the orange and yellow phases) were found to be 1.5 - 2.2 times higher than for the crystals operating in the middle IR range. (interaction of laser radiation with matter. laser plasma)« less

Numerical analysis of СО laser frequency conversion efficiency in BaGa2GeSe6 crystal

NASA Astrophysics Data System (ADS)

Ionin, A. A.; Kinyaevskiy, I. O.; Mozhaeva, V. A.

2018-03-01

Non-linear optical characteristics of a new BaGa2GeSe6 crystal were numerically studied and compared with ones of the well-known mid-IR nonlinear crystal ZnGeP2 (ZGP). The calculations demonstrated the new crystal to be more efficient or, at least, competitive with the ZGP crystal for frequency conversion of CO- and CO2-laser radiation. It was found that a broadband two-stage frequency conversion of multi-line CO-laser radiation in this crystal is possible within the 2.5-9.0 µm wavelength range, with higher efficiency than in the ZGP crystal.

Coupling of semiconductor nanowires with neurons and their interfacial structure.

PubMed

Lee, Ki-Young; Shim, Sojung; Kim, Il-Soo; Oh, Hwangyou; Kim, Sunoh; Ahn, Jae-Pyeong; Park, Seung-Han; Rhim, Hyewhon; Choi, Heon-Jin

2009-12-04

We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

Post-entry and volcanic contaminant abundances of zinc, copper, selenium, germanium and gallium in stratospheric micrometeorites

NASA Technical Reports Server (NTRS)

Rietmeijer, Frans J. M.

1995-01-01

Some fraction of Zn, Cu, Se, Ga and Ge in chondritic interplanetary dust particles (IDPs) collected in the lower stratosphere between 1981 May and 1984 June has a volcanic origin. I present a method to evaluate the extent of this unavoidable type of stratospheric contamination for individual particles. The mass-normalized abundances for Cu and Ge as a function of mass-normalized stratospheric residence time show their time-integrated stratospheric aerosol abundances. The Zn, Se and Ga abundances show a subdivision into two groups that span approximately two-year periods following the eruptions of the Mount St. Helens (1980 May) and El Chichon (1982 April) volcanoes. Elemental abundances in particles collected at the end of each two-year period indicate low, but not necessarily ambient, volcanic stratospheric abundances. Using this time-integrated baseline, I calculate the straospheric contaminant fractions in nine IDPs and show that Zn, SE and Ga abundances in chondritic IDPs derive in part from stratospheric aerosol contaminants. Post-entry elemental abundances (i.e., the amount that survived atmospheric entry heating of the IDP) show enrichments relative to the CI abundances but in a smaller number of particles than previously suggested.

Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

DTIC Science & Technology

2012-08-01

substrate cells. 3   GaAs CIGS CdTe α-SI Organic Trip. jun. Metam. C-Si Trip. Jun. Ge sub InP Power/Weight  Tradeoff...40   -  AR  coa<ng  ( ZnS /MgF2)150nm...AR  coa<ng  ( ZnS /MgF2)150nm                                      $5   -  HF

Hydrogen Surfactant Effect on ZnO/GaN Heterostructures Growth

NASA Astrophysics Data System (ADS)

Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

To grow high quality heterostructures based on ZnO and GaN, growth conditions that favor the layer by layer (Frank-Van der Merwe) growth mode have to be applied. However, if A wets B, B would not wet A without special treatments. A famous example is the epitaxial growth of Si/Ge/Si heterostructure with the help of arsenic surfactant in the late 1980s. It has been confirmed by the previous experiments and our calculations that poor crystal quality and 3D growth mode were obtained when GaN grown on ZnO polar surfaces while high quality ZnO was achieved on (0001) and (000-1)-oriented GaN. During the standard OMVPE growth processes, hydrogen is a common impurity and hydrogen-involved surface reconstructions have been well investigated experimentally and theoretically elsewhere. Due to the above facts, we proposed key growth strategies by using hydrogen as a surfactant to achieve ideal growth mode for GaN on ZnO (000-1) surface. This novel strategy may for the first time make the growth of high quality GaN single crystal on ZnO substrate possible. This surfactant effect is expected to largely improve the crystal quality and the efficiency of ZnO/GaN super lattices or other heterostructure devices. Part of the computing resources was provided by the High Performance Cluster Computing Centre, Hong Kong Baptist University. This work was supported by the start-up funding and direct Grant with the Project code of 4053134 and 3132748 at CUHK.

Proton and deuteron induced reactions on natGa: Experimental and calculated excitation functions

NASA Astrophysics Data System (ADS)

Hermanne, A.; Adam-Rebeles, R.; Tárkányi, F.; Takács, S.; Ditrói, F.

2015-09-01

Cross-sections for reactions on natGa, induced by protons (up to 65 MeV) and deuterons (up to 50 MeV), producing γ-emitting radionuclides with half-lives longer than 1 h were measured in a stacked-foil irradiation using thin Ga-Ni alloy (70-30%) targets electroplated on Cu or Au backings. Excitation functions for generation of 68,69Ge, 66,67,68,72Ga and 65,69mZn on natGa are discussed, relative to the monitor reactions natAl(d,x)24,22Na, natAl(p,x)24,22Na, natCu(p,x)62Zn and natNi(p,x)57Ni. The results are compared to our earlier measurements, the scarce literature values and to the results of the code TALYS 1.6 (online database TENDL-2014).

Germanium enrichment in supergene settings: evidence from the Cristal nonsulfide Zn prospect, Bongará district, northern Peru

NASA Astrophysics Data System (ADS)

Mondillo, Nicola; Arfè, Giuseppe; Herrington, Richard; Boni, Maria; Wilkinson, Clara; Mormone, Angela

2018-02-01

Supergene nonsulfide ores form from the weathering of sulfide mineralization. Given the geochemical affinity of Ge to Si4+ and Fe3+, weathering of Ge-bearing sulfides could potentially lead to Ge enrichments in silicate and Fe-oxy-hydroxide minerals, although bulk rock Ge concentrations in supergene nonsulfide deposits are rarely reported. Here, we present the results of an investigation into Ge concentrations and deportment in the Cristal supergene Zn nonsulfide prospect (Bongará, northern Peru), which formed from the weathering of a preexisting Mississippi Valley-type (MVT) sulfide deposit. Material examined in this study originates from drillcore recovered from oxidized Zn-rich bodies 15-20 m thick, containing 5-45 wt% Zn and Ge concentrations 100 ppm. Microanalysis and laser ablation-ICP-MS show that precursor sphalerite is rich in both Fe (mean Fe = 8.19 wt%) and Ge (mean Ge = 142 ppm). Using the mineral geothermometer GGIMFis—geothermometer for Ga, Ge, In, Mn, and Fe in sphalerite—proposed by Frenzel et al. (Ore Geol Rev 76:52-78, 2016), sphalerite trace element data from the Cristal prospect suggest a possible formation temperature ( T GGIMFis) of 225 ± 50 °C, anomalously high for a MVT deposit. Germanium concentrations measured in both goethite (mean values 100 to 229 ppm, max 511 ppm) and hemimorphite (mean values 39 to 137 ppm, max 258 ppm) are similar to concentrations measured in hypogene sphalerite. Additionally, the Ge concentrations recorded in bulk rock analyses of sphalerite-bearing and oxidized samples are also similar. A persistent warm-humid climate is interpreted for the region, resulting in the development of an oxidation zone favoring the formation of abundant Zn hydrosilicates and Fe hydroxides, both able to incorporate Ge in their crystal structure. In this scenario, Ge has been prevented from dispersion during the weathering of the Ge-bearing sulfide bodies and remains in the resultant nonsulfide ore.

Seebeck Coefficient Measurements on Micron-Size Single-Crystal Zinc Germanium Nitride Rods

NASA Astrophysics Data System (ADS)

Dyck, J. S.; Colvin, J. R.; Quayle, P. C.; Peshek, T. J.; Kash, K.

2016-06-01

II-IV-nitride compounds are tetrahedrally bonded, heterovalent ternary semiconductors that have recently garnered attention for their potential technological applications. These materials are derived from the parent III-nitride compounds; ZnGeN2 is the II-IV-nitride analogue to the III-nitride GaN. Very little is known about the transport properties of ZnGeN2. In this work, we present Seebeck coefficient ( S) data on 3-micron-diameter, 70-micron-long, single-crystal ZnGeN2 rods, employing a novel measurement approach. The measurements of S show that the majority free carriers are electrons, and imply that the carrier gas is degenerate. Within a single-band model for the conduction band, a carrier concentration of order 1019 cm-3 was estimated for a measured S = -90 μV/K. Together with electrical transport measurements, a lower limit for the electron mobility is estimated to be ˜20 cm2/V-s. A discussion of this material as a thermoelectric is presented. The background level of free electrons in this unintentionally doped ZnGeN2 is very near the predicted optimum value for maximum thermoelectric performance.

Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

NASA Astrophysics Data System (ADS)

Wang, Wei-Fu; Cheng, Kai-Yuan; Hsieh, Kuang-Chien

2018-01-01

Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3) along with diffused germanium donors whose concentration (>>1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

Thermal stability of implanted dopants in GaN

NASA Astrophysics Data System (ADS)

Wilson, R. G.; Pearton, S. J.; Abernathy, C. R.; Zavada, J. M.

1995-04-01

Results are reported of measurements of depth profiles and stability against redistribution with annealing up to 800 or 900 °C, for implanted Be, C, Mg, Si, S, Zn, Ge, and Se as dopants in GaN. The results confirm the high-temperature stability of dopants in this material up to temperatures that vary from 600 to 900 °C. S redistributes for temperatures above 600 °C, and Zn and Se, for temperatures above 800 °C. All of the other elements are stable to 900 °C. These results indicate that direct implantation of dopants rather than masked diffusion will probably be necessary to define selective area doping of III-V nitride device structures based on these results for GaN.

The optimization of Ga (1-x)Al (x)As-GaAs solar cells for air mass zero operation and a study of Ga (1-x)Al (x)As-GaAs solar cells at high temperatures, phase 1

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Woodall, J. M.

1976-01-01

The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn doped pGaAs region, and a Zn doped Ga(1-x)Al(x)As layer, (2) one consisting of an nGaAs substrate, a Ge doped pGaAs region, and a pGa(1-x)Al(x)As upper layer, and (3) one consisting of an n+GaAs substrate, an nGa(1-x)Al(X)As region, a pGa(1-x)Bl(X) As region, and a pGa(1-y)Al(y)As upper layer. In all three cases, the upper alloy layer is thin and of high Al composition in order to obtain high spectral response over the widest possible range of photon energies. Spectral response, capacitance-voltage, current-voltage, diffusion length, sunlight (or the equivalent)-efficiency, and efficiency-temperature measurements were made as a function of device parameters in order to analyze and optimize the solar cell behavior.

Laser Evaporation Studies.

DTIC Science & Technology

1987-10-01

characterized to understand the ef- dependent refractive-index, ambient sensitivity due to fects of the laser evaporation conditions on the struc- adsorption of...or Ar-coated ZnSe crystalline structure in thin films Pulsed laser-assisted dep- osition is one such emerging technique which has a unique...needed to pre% ent satura- plates of ZnSe. NaCI. GaAs. and Ge. which when used in tion of the detector arraN. ,arious combinations proided incremental

Ultra-Low Power Fiber-Coupled Gallium Arsenide Photonic Crystal Cavity Electro-Optical Modulator

DTIC Science & Technology

2011-04-11

1185 (2009). 6. B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP , GaAs, and InGaAsP,” IEEE J...Finally, a Au/Ge/Ni/Au n-type contact and a Au/ Zn /Au p-type contact were deposited and the membranes were released by wet etching the sacrificial

Nuclear Data Sheets for A = 61

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuber, Kazimierz; Singh, Balraj

2015-03-15

The evaluated spectroscopic data are presented for known nuclides of mass 61 (Sc,Ti,V,Cr,Mn,Fe,Co,Ni, Cu,Zn,Ga,Ge). Excited-state data are nonexistent for {sup 61}Sc, {sup 61}Ti, {sup 61}V, and {sup 61}Ge. Significant amounts of new data have been added since the previous NDS evaluation of A=61 nuclides (1999Bh04). {sup 61}Sc nuclide is now experimentally known, but without any knowledge of its half-life. The ground state half-lives of {sup 61}Ti and {sup 61}V are now determined. Excited-state data have become available for {sup 61}Cr, {sup 61}Mn and {sup 61}Ga, while for {sup 61}Ge, five excited states were erroneously assigned in the previous evaluation, thesemore » have been omitted here. Improved and extensive high-spin excitations are available for {sup 61}Fe, {sup 61}Cu and {sup 61}Zn, including several new superdeformed structures in {sup 61}Cu and {sup 61}Zn. Thermal neutron capture γ-ray data are available in detail from 2004Ra23. The radioactive decay schemes of {sup 61}Sc and {sup 61}Ti are not known, while those for {sup 61}V, {sup 61}Fe and {sup 61}Ge are poorly known. This work benefited from the earlier full evaluations of A=61 published by 1999Bh04, 1983Ek01 and 1975Au05 and the one published in an ‘update’ mode by 1992Zh31. The data and conclusions presented in the current work supersede those in all the previous evaluations.« less

Native interstitial defects in ZnGeN2

NASA Astrophysics Data System (ADS)

Skachkov, Dmitry; Lambrecht, Walter R. L.

2017-10-01

A density functional study is presented of the interstitial Zni, Gei, and Ni in ZnGeN2. Corrections to the band gap are included by means of the LDA+U method. The Zn and Ge interstitials are both found to strongly prefer the larger octahedral site compared to the two types of tetrahedral sites. The Zn interstitial is found to be a shallow double donor, but it has higher energy than previously studied antisite defects. It has a resonance in the conduction band that is Zn-s like. The Ge interstitial is an even higher energy of formation defect and also behaves as a shallow double donor, but it also has a deep level in the gap corresponding to a Ge-s orbital character while the Ge-p forms a resonance in the conduction band. The nitrogen interstitial forms a split-interstitial configuration, as also occurs in GaN. Its electronic levels can be related to that of a N2 molecule. The defect levels in the gap correspond to the πg-like lowest unoccupied molecular orbital of the molecule, which here becomes filled with three electrons in the defect's neutral charge state. They are found to prefer a high-spin configuration in the q =+1 state. The corresponding transition levels are obtained and show that this is an amphoteric trap level occurring in +2 , +1 , 0, and -1 charge states. The two possible sites for this split interstitial, on top of Zn or on top of Ge, differ slightly in N2 bond length. While the Ni defects have the lowest formation energy among the interstitials, it is still higher than that of the antisites. Hence they are not expected to occur in sufficient concentration to affect the intrinsic Fermi level position. In particular, they do not contribute to the unintentional n -type background doping.

Scanning Tunneling Microscopy

DTIC Science & Technology

1992-03-17

tihodoluminescence spectroscopy , coupled with pulsed laser annealing-to reveal systematics between interface chemical and electronic structure. The...Duke and Y. C. Chanf "The atomic geometries of ZnSe (110) a~e GaAs (110): determination by photoemissic spectroscopy ," to be published...resonances in the conduction band), Be, Tl, In, Ga , AI, Pb, Sn, Ge, Si, B, Bi, Sb, Po, Te, As, At, P, Se, I, C, S, and Br (in the gap), with Cl, N, 0

SXRF determination of trace elements in chondrule rims in the unequilibrated CO3 chondrite, ALH A77307

NASA Technical Reports Server (NTRS)

Brearley, Adrian J.; Bajt, Sasa; Sutton, Steve R.; Papike, J. J.

1993-01-01

The concentrations of Ni, Cu, Zn, Ga, Ge, and Se in five chondrule rims in the CO3 chondrite ALH A77307 (3.0) using the synchrotron x-ray fluorescence (SXRF) microprobe at Brookhaven National Laboratory were determined. The data show that the trace element chemistry of rims on different chondrules is remarkably similar, consistent with data obtained for the major elements by electron microprobe. These results support the idea that rims are not genetically related to individual chondrules, but all sampled the same reservoir of homogeneously mixed dust. Of the trace elements analyzed Zn and Ga show depletions relative to CI chondrite values, but in comparison with bulk CO chondrites all the elements are enriched by approximately 1.5 to 3.5 x CO. The high concentrations of the highly volatile elements Se and Ga and moderately volatile Zn (1.5 to 2 x CO) in rims show that matrix is the major reservoir of volatile elements in ALH A77307.

Production of 68Ga-citrate Based on a SnO2 Generator for Short-Term Turpentine Oil-Induced Inflammation Imaging in Rats.

PubMed

Mirzaei, Alireza; Jalilian, Amir R; Akhlaghi, Mehdi; Beiki, Davood

2016-01-01

Gallium-68 citrate has been successfully applied in the PET imaging of infections and inflammation in some centers; however further evaluation of the tracer in inflammation models is of great importance. 68Ga-citrate prepared from [68Ga]GaCl3 (eluted form an SnO2 based 68Ge/68Ga generator) and sodium citrate at optimized conditions followed by quality control tests was injected to normal and turpentine-oil induced rats PET/CT imaging studies up to 290 min. 68Ga-citrate was prepared with acceptable radiochemical purity (>99 ITLC, >99% HPLC), specific activity (28-30 GBq/mM), chemical purity (Sn, Fe <0.3 ppm; Zn<0.2 ppm) in 15 min at 50°C. PET/CT imaging of the tracer demonstrated early detection of inflamed site in animal models in 60-80 min. This study demonstrated possible early detection of inflammation foci in vivo using 68Ga-citrate prepared using commercially available 68Ge/68Ga generators for PET imaging. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Observation of defects evolution in electronic materials

NASA Astrophysics Data System (ADS)

Jang, Jung Hun

Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2 annealing, ion-implantation, and thermal oxidation. Advanced characterization techniques have been used to obtain information about strain, relaxation, layer thickness, elemental composition, defects, surface/interface morphology changes and so on. Based on the understanding of defects behavior during the strain relaxation after post thermal processes, a new manufacturing process to obtain highly-relaxed and thin Si1-xGex layers, which could be used as virtual substrates for strained-Si applications, was found.

Critical elements in sediment-hosted deposits (clastic-dominated Zn-Pb-Ag, Mississippi Valley-type Zn-Pb, sedimentary rock-hosted Stratiform Cu, and carbonate-hosted Polymetallic Deposits): A review: Chapter 12

USGS Publications Warehouse

Marsh, Erin; Hitzman, Murray W.; Leach, David L.

2016-01-01

Some sediment-hosted base metal deposits, specifically the clastic-dominated (CD) Zn-Pb deposits, carbonate-hosted Mississippi Valley-type (MVT) deposits, sedimentary-rock hosted stratiform copper deposits, and carbonate-hosted polymetallic (“Kipushi type”) deposits, are or have been important sources of critical elements including Co, Ga, Ge, and Re. The generally poor data concerning trace element concentrations in these types of sediment-hosted ores suggest that there may be economically important concentrations of critical elements yet to be recognized.

Constructing the GW self-energy of a point defect from the perfect crystal and the near neighborhood of the defect

NASA Astrophysics Data System (ADS)

Skachkov, Dmitry; van Schilfgaarde, Mark; Lambrecht, Walter

The full-potential linearized muffin-tin orbital method allows for a real space representation of the GW or quasi-particle self-consistent (QS)GW self-energy ΣR , L ; R' + T , L'. This can be used to construct the self-energy matrix for a point defect system in a large supercell from that of the perfect crystal in the primitive cell and the self-energy of the defect site and its near neighborhood, obtained self-consistently in a smaller supercell. At the interface between both regions we can average the two types of ΣR , L ; R' + T , L' matrix blocks. The result relies on the limited range of the self-energy matrix in real space. It means that we can calculate the quasiparticle energy levels of the defect system at essentially the cost of a DFT calculation and a few QSGW calculations for relatively small systems. The approach presently focuses on quasiparticle energy levels of band structures of the defect system rather than total energies. We will present test results for AsGa\\ in GaAs, ZnGe in ZnGeN2, NO, VO, VZn, and NO - VZn in ZnO. Supported by the US-DOE-BES under Grant No. DE-SC0008933.

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

NASA Astrophysics Data System (ADS)

Yeh, Li-Ko; Tian, Wei-Cheng; Lai, Kun-Yu; He-Hau, Jr.

2016-12-01

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

Anode materials for lithium ion batteries

DOEpatents

Abouimrane, Ali; Amine, Khalil

2017-04-11

An electrochemical device includes a composite material of general Formula (1-x)J-(x)Q wherein: J is a metal carbon alloy of formula Sn.sub.zSi.sub.z'Met.sub.wMet'.sub.w'C.sub.t; Q is a metal oxide of formula A.sub..gamma.M.sub..alpha.M'.sub..alpha.'O.sub..beta.; and wherein: A is Li, Na, or K; M and M' are individually Ge, Mo, Al, Ga, As, Sb, Te, Ti, Ta, Zr, Ca, Mg, Sr, Ba, Li, Na, K, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Rt, Ru or Cd; Met and Met' are individually Ge, Mo, Al, Ga, As, Sb, Te, Ti, Ta, Zr, Ca, Mg, Sr, Ba, Li, Na, K, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Rt, Ru or Cd; 0

Preparation and Quality Control of 68Ga-Citrate for PET Applications

PubMed Central

Aghanejad, Ayuob; Jalilian, Amir Reza; Ardaneh, Khosro; Bolourinovin, Fatemeh; Yousefnia, Hassan; Samani, Ali Bahrami

2015-01-01

Objective(s): In nuclear medicine studies, gallium-68 (8Ga) citrate has been recently known as a suitable infection agent in positron emission tomography (PET). In this study, by applying an in-house produced 68Ge/68Ga generator, a simple technique for the synthesis and quality control of 68Ga-citrate was introduced; followed by preliminary animal studies. Methods: 68GaCl3 eluted from the generator was studied in terms of quality control factors including radiochemical purity (assessed by HPLC and RTLC), chemical purity (assessed by ICP-EOS), radionuclide purity (evaluated by HPGe), and breakthrough. 68Ga-citrate was prepared from eluted 68GaCl3 and sodium citrate under various reaction conditions. Stability of the complex was evaluated in human serum for 2 h at 370C, followed by biodistribution studies in rats for 120 min. Results: 68Ga-citrate was prepared with acceptable radiochemical purity (>97 ITLC and >98% HPLC), specific activity (4-6 GBq/mM), chemical purity (Sn, Fe<0.3 ppm and Zn<0.2 ppm) within 15 min at 500C. The biodistribution of 68Ga-citrate was consistent with former reports up to 120 minutes. Conclusion: This study demonstrated the possible in-house preparation and quality control of 68Ga-citrate, using a commercially available 68Ge/68Ga generator for PET imaging throughout the country. PMID:27408889

Large Stratospheric IDPs: Chemical Compostion and Comparison with Smaller Stratospheric IDPs

NASA Astrophysics Data System (ADS)

Flynn, G. J.; Bajt, S.; Sutton, S. R.; Klock, W.

1995-09-01

Six large stratospheric IDPs, each greater than 35 microns, previously analyzed using the X-Ray Microprobe at the National Synchrotron Light Source showed an average volatile content consistent with CI or CM meteorites [1]. Seven additional large IDPs, ranging from 37x33 to 50x44 microns in size and having chondritic major element abundances, have been analyzed using the same instrument. Each of these 7 IDPs is depleted in Ca compared to CI (Avg. Ca = 0.48xCI), a feature also observed in the first set of 6, suggesting most or all of these IDPs are hydrated. The average trace element content of these 7 large IDPs is similar to the previous set of 6 (see Figure 1), though Mn and Cu are about 70% higher in this set. The average composition of these large IDPs is distinctly different from that of smaller IDPs (generally 10 to 20 microns), which show enrichments of the volatiles Cu, Zn, Ga, Ge, and Se by factors of 1.5 to 3 over CI [2]. This suggests large IDPs which are strong enough to resist fragmentation on collection are chemically different from typical smaller IDPs. This may reflect a difference in the source(s) being sampled by the two types of IDPs. A subgroup of the smaller IDPs (9 of 51 particles) have a composition similar to CI meteorites and these large IDPs [2]. Bromine is enriched in most of these large IDPs. Two Br-rich IDPs (Br >300 ppm) and one Br-poor IDP (Br ~5 ppm) were each analyzed twice. The two Br-rich IDPs showed about a factor of two Br loss between the first and second analyses, presumably due to sample heating during the first analysis. This suggests some of the Br is very weakly bound in these Br-rich IDPs, a possible signature of Br surface contamination. However, the Br contents measured in the second analyses were still ~50xCI. No loss of Cu, Zn, Ga, Ge or Se was detected in these IDPs, suggesting these elements are in more retentive sites. The Br-poor IDP (Br ~1.5xCI) showed no Br loss in the second analysis. Only one of these IDPs, L2008G10, showed a large Zn depletion (Zn/Fe <0.01xCI). This was accompanied by low contents of Ga, Ge and Br (see Figure 1). This pattern of Zn, Ge, Br and Ga depletions was previously seen in smaller IDPs which were severely heated, presumably on atmospheric entry [2]. Sulfur and K are also low in L2008G10, suggesting these elements are also lost during heating, but the Se content is 0.8xCI. A second particle, L2009C8, has a Zn/Fe=0.26xCI, possibly indicating less severe heating. The low fraction of severely heated IDPs, only one in this set of 7 and none in the set of 6 [1] suggests a very low atmospheric entry velocity for these large IDPs [3]. References: [1] Flynn G. J. et al. (1995) LPS XXVI, 407-408. [2] Flynn G. J. et al. (1993) LPS XXIV, 495-496. [3] Flynn G. J., this volume. Figure 1: Average Fe and CI normalized element abundances in 7 large IDPs, 6 different large IDPs [1], 51 smaller IDPs [2], and the single low-Zn IDP, L2008G10, included in the set of 7 large IDPs.

71Ga-77Se connectivities and proximities in gallium selenide crystal and glass probed by solid-state NMR

NASA Astrophysics Data System (ADS)

Nagashima, Hiroki; Trébosc, Julien; Calvez, Laurent; Pourpoint, Frédérique; Mear, François; Lafon, Olivier; Amoureux, Jean-Paul

2017-09-01

We introduce two-dimensional (2D) 71Ga-77Se through-bond and through-space correlation experiments. Such correlations are achieved using (i) the J-mediated Refocused Insensitive Nuclei Enhanced by Polarization Transfer (J-RINEPT) method with 71Ga excitation and 77Se Carr-Purcell-Meiboon-Gill (CPMG) detection, as well as (ii) the J- or dipolar-mediated Hetero-nuclear Multiple-Quantum Correlation (J- or D-HMQC) schemes with 71Ga excitation and quadrupolar CPMG (QCPMG) detection. These methods are applied to the crystalline β-Ga2Se3 and the 0.2Ga2Se3-0.8GeSe2 glass. Such glass leads to a homogeneous and reproducible glass-ceramic, which is a good alternative to single-crystalline Ge and polycrystalline ZnSe materials for making lenses transparent in the IR range for thermal imaging applications. We show that 2D 71Ga-77Se correlation experiments allow resolving the 77Se signals of molecular units, which are not resolved in the 1D 77Se CPMG spectrum. Additionally, the build-up curves of the J-RINEPT and the J-HMQC experiments allow the estimate of the 71Ga-77Se J-couplings via one and three-bonds in the three-dimensional network of β-Ga2Se3. Furthermore, these build-up curves show that the one-bond 1J71Ga-77Se couplings in the 0.2Ga2Se3-0.8GeSe2 glass are similar to those measured for β-Ga2Se3. We also report 2D 71Ga Satellite Transition Magic-Angle Spinning (STMAS) spectrum of β-Ga2Se3 using QCPMG detection at high magnetic field and high Magic-Angle Spinning frequency using large radio frequency field. Such spectrum allows separating the signal of β-Ga2Se3 and that of an impurity.

High Pressure Properties of a Ba-Cu-Zn-P Clathrate-I

DOE PAGES

Dolyniuk, Juli -Anna; Kovnir, Kirill

2016-08-12

Here, the high pressure properties of the novel tetrel-free clathrate, Ba 8Cu 13.1Zn 3.3P 29.6, were investigated using synchrotron powder X-ray diffraction. The pressure was applied using a diamond anvil cell. No structural transitions or decomposition were detected in the studied pressure range of 0.1–7 GPa. The calculated bulk modulus for Ba 8Cu 13.1Zn 3.3P 29.6 using a third-order Birch-Murnaghan equation of state is 65(6) GPa at 300 K. This bulk modulus is comparable to the bulk moduli of Ge- and Sn-based clathrates, like A 8Ga 16Ge 30 (A = Sr, Ba) and Sn 19.3Cu 4.7P 22I 8, but lowermore » than those for the transition metal-containing silicon-based clathrates, Ba 8 T xSi46–x, T = Ni, Cu; 3 ≤ x ≤ 5.« less

Calculations of acceptor ionization energies in GaN

NASA Astrophysics Data System (ADS)

Wang, H.; Chen, A.-B.

2001-03-01

The k.p Hamiltonian and a model potential are used to deduce the acceptor ionization energies in GaN from a systematic study of the chemical trend in GaAs, GaP, and InP. The acceptors studied include Be, Mg, Ca, Zn, and Cd on the cation sites and C, Si, and Ge on the anion sites. Our calculated acceptor ionization energies are estimated to be accurate to better than 10% across the board. The ionization energies of C and Be (152 and 187 meV, respectively) in wurtzite GaN are found to be lower than that of Mg (224 meV). The C was found to behave like the hydrogenic acceptor in all systems and it has the smallest ionization energy among all the acceptors studied.

Acceptor Ionization Energies in GaN*

NASA Astrophysics Data System (ADS)

Wang, Hao; Ban Chen, An

2001-03-01

The k.p Hamiltonian and a model potential are used to deduce the acceptor ionization energies in GaN from a systematic study of the chemical trend in GaAs, GaP, and InP. The acceptors studied include Be, Mg, Ca, Zn, and Cd on the cation sites and C, Si, and Ge on the anion sites. Our calculated acceptor ionization energies are estimated to be accurate to better than ten percent across the board. The ionization energies of C and Be (152 and 187 meV respectively) in wurtzite GaN are found to be lower than that of Mg (224 meV). The C was found to behave like the hydrogenic acceptor in all systems and it has the smallest ionization energy among all the acceptors studied.

Cyclotron production of Ga-68 for human use from liquid targets: From theory to practice

NASA Astrophysics Data System (ADS)

Alves, F.; Alves, V. H.; Neves, A. C. B.; do Carmo, S. J. C.; Nactergal, B.; Hellas, V.; Kral, E.; Gonçalves-Gameiro, C.; Abrunhosa, A. J.

2017-05-01

A fully automated system for the production of 68Ga based on commercially available cyclotron liquid target and synthesis modules is described. A solution containing enriched 68Zn dissolved in a nitric solution is irradiated in a Cyclone 18/9 IBA cyclotron leading to the production of up to about 25 GBq of 68Ga. The irradiated solution is transferred to a Synthera synthesis module in which 68Ga is separated and purified with a yield superior to 85 % and where further labelling is achieved with yields no inferior to 70 %. The developed and implemented method presents an improved approach for the production of 68Ga-radiopharmaceuticals suitable for human use, in a process that takes less than 2 hours. This technique represents an economically viable alternative to 68Ge/68Ga generators with improved characteristics.

TOPICAL REVIEW: The doping process and dopant characteristics of GaN

NASA Astrophysics Data System (ADS)

Sheu, J. K.; Chi, G. C.

2002-06-01

The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O, and grown-in defects, such as vacancy and antisite point defects, are also discussed. The doping process during epitaxial growth of GaN, AlGaN, InGaN, and their superlattice structures is described. Doping using the diffusion process and ion implantation techniques is also discussed. A p-n junction formed by Si implantation into p-type GaN is successfully fabricated. The results on crystal structure, electrical resistivity, carrier mobility, and optical spectra obtained by means of x-rays, low-temperature Hall measurements, and photoluminescence are also discussed.

Characterization of Electrostatic Potential and Trapped Charge in Semiconductor Nanostructures using Off-Axis Electron Holography

NASA Astrophysics Data System (ADS)

Gan, Zhaofeng

Off-axis electron holography (EH) has been used to characterize electrostatic potential, active dopant concentrations and charge distribution in semiconductor nanostructures, including ZnO nanowires (NWs) and thin films, ZnTe thin films, Si NWs with axial p-n junctions, Si-Ge axial heterojunction NWs, and Ge/Li xGe core/shell NW. The mean inner potential (MIP) and inelastic mean free path (IMFP) of ZnO NWs have been measured to be 15.3V+/-0.2V and 55+/-3nm, respectively, for 200keV electrons. These values were then used to characterize the thickness of a ZnO nano-sheet and gave consistent values. The MIP and IMFP for ZnTe thin films were measured to be 13.7+/-0.6V and 46+/-2nm, respectively, for 200keV electrons. A thin film expected to have a p-n junction was studied, but no signal due to the junction was observed. The importance of dynamical effects was systematically studied using Bloch wave simulations. The built-in potentials in Si NWs across the doped p-n junction and the Schottky junction due to Au catalyst were measured to be 1.0+/-0.3V and 0.5+/-0.3V, respectively. Simulations indicated that the dopant concentrations were ~1019cm-3 for donors and ~1017 cm-3 for acceptors. The effects of positively charged Au catalyst, a possible n+-n --p junction transition region and possible surface charge, were also systematically studied using simulations. Si-Ge heterojunction NWs were studied. Dopant concentrations were extracted by atom probe tomography. The built-in potential offset was measured to be 0.4+/-0.2V, with the Ge side lower. Comparisons with simulations indicated that Ga present in the Si region was only partially activated. In situ EH biasing experiments combined with simulations indicated the B dopant in Ge was mostly activated but not the P dopant in Si. I-V characteristic curves were measured and explained using simulations. The Ge/LixGe core/shell structure was studied during lithiation. The MIP for LixGe decreased with time due to increased Li content. A model was proposed to explain the lower measured Ge potential, and the trapped electron density in Ge core was calculated to be 3x1018 electrons/cm3. The Li amount during lithiation was also calculated using MIP and volume ratio, indicating that it was lower than the fully lithiated phase.

A Broadband Infrared Laser Source (2.5-17 μm) for Plasma Diagnostics

NASA Astrophysics Data System (ADS)

Ionin, A. A.; Kinyaevskii, I. O.; Klimachev, Yu. M.; Kozlov, A. Yu.; Kotkov, A. A.

2017-12-01

This paper presents the results of studies aimed at the creation of a hybrid laser system which is composed of a gas lasers and a nonlinear crystal and appreciably broadens and enriches the radiation spectrum of these lasers. A highly efficient conversion (37%) is attained when generating the second harmonic in a ZnGeP2 crystal owing to an increase in the peak power of CO laser radiation in the mode locking regime. The two-cascade conversion (generation of both sum and difference frequencies) of radiation of a broadband CO laser in the single sample of such nonlinear crystals as ZnGeP2 and AgGaSe2 is demonstrated. In this case, the radiation spectrum is broadened by nearly a factor of two, and the number of detected spectral lines grows by a factor of four. The use of a comparatively simple laser system of gas-discharge CO and CO2 lasers to conversion in AgGaSe2 results in laser radiation tunable over a set of narrow spectral lines within a range from 2.5 to 16.6 μm (more than two and a half octaves).

First-principles study of defect formation in a photovoltaic semiconductor Cu2ZnGeSe4

NASA Astrophysics Data System (ADS)

Nishihara, Hironori; Maeda, Tsuyoshi; Wada, Takahiro

2018-02-01

The formation energies of neutral Cu, Zn, Ge, and Se vacancies in kesterite-type Cu2ZnGeSe4 were evaluated by first-principles pseudopotential calculations using plane-wave basis functions. The calculations were performed at typical points in Cu-(Zn1/2Ge1/2)-Se and Cu3Se2-ZnSe-GeSe2 pseudoternary phase diagrams for Cu2ZnGeSe4. The results were compared with those for Cu2ZnSnSe4, Cu2ZnGeS4, and Cu2ZnSnS4 calculated using the same version of the CASTEP program code. The results indicate that Cu vacancies are easily formed in Cu2ZnGeSe4 under the Cu-poor condition as in the above compounds and CuInSe2, suggesting that Cu2ZnGeSe4 is also a preferable p-type absorber material for thin-film solar cells. The formation energies of possible antisite defects, such as CuZn and CuGe, and of possible complex defects, such as CuZn+ZnCu, were also calculated and compared within the above materials. The antisite defect of CuZn, which has the smallest formation energy within the possible defects, is concluded to be the most hardly formed in Cu2ZnGeSe4 among the compounds.

Room temperature electroluminescence from n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction device grown by PLD

NASA Astrophysics Data System (ADS)

Zhang, Lichun; Li, Qingshan; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2014-05-01

The n-ZnO:Ga/ p-GaN:Mg and n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated by the pulsed laser deposition (PLD) technique. The blue electroluminescence (EL) of the n-ZnO:Ga/ p-GaN:Mg heterojunction LEDs is emitted mainly from the p-GaN layer instead of the n-ZnO:Ga layer, for the reason that the electron injection from n-ZnO:Ga prevailed over the hole injection from p-GaN:Mg due to the higher carrier concentration and carrier mobility in n-ZnO:Ga. On the other hand, the n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction LEDs exhibited dominant ultraviolet-blue emission. The reason for this difference is attributed to the inserted undoped i-ZnO layer between n-ZnO:Ga and p-GaN:Mg, in which the holes from p-GaN:Mg and the electrons from n-ZnO:Ga are recombined.

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mezdrogina, M. M., E-mail: margaret.m@mail.ioffe.ru; Krivolapchuk, V. V., E-mail: vlad.krivol@mail.ioffe.ru; Feoktistov, N. A.

2008-07-15

Luminescence intensity of heterostructures based on n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) is higher by more than an order of magnitude than the corresponding intensity of separate n-ZnO, p-GaN:(Er + Zn), and AlGaN:(Er + Zn) layers. Most likely, this phenomenon is due to the effective tunneling recombination of charge carriers caused by a decrease in the concentration of the nonradiative recombination centers located between the n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) layers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abou El-Maaref, A., E-mail: aahmh@hotmail.com; Allam, S.H.; El-Sherbini, Th.M.

The energy levels, oscillator strengths, line strengths, and transition probabilities for transitions among the terms belonging to the 3s{sup 2}3p{sup 2}, 3s3p{sup 3}, 3s{sup 2}3p3d, 3s{sup 2}3p4s, 3s{sup 2}3p4p and 3s{sup 2}3p4d configurations of silicon-like ions (Zn XVII, Ga XVIII, Ge XIX, and As XX) have been calculated using the configuration-interaction code CIV3. The calculations have been carried out in the intermediate coupling scheme using the Breit–Pauli Hamiltonian. The present calculations have been compared with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement withmore » both experimental and theoretical data. Lifetimes of the excited levels have also been calculated. -- Highlights: •We have calculated the fine-structure energy levels of Si-like Zn, Ga, Ge and As. •The calculations are performed using the configuration interaction method (CIV3). •We have calculated the oscillator strengths, line strengths and transition rates. •The wavelengths of the transitions are listed in this article. •We also have made comparisons between our data and other calculations.« less

The photocatalytic properties of hollow (GaN)1-x(ZnO)x composite nanofibers synthesized by electrospinning

NASA Astrophysics Data System (ADS)

Wang, Ding; Zhang, Minglu; Zhuang, Huaijuan; Chen, Xu; Wang, Xianying; Zheng, Xuejun; Yang, Junhe

2017-02-01

(GaN)1-x(ZnO)x composite nanofibers with hollow structure were prepared by initial electrospinning, and the subsequent calcination and nitridation. The structure and morphology characteristics of samples were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The characterization results showed the phase transition from ZnGa2O4 to (GaN)1-x(ZnO)x solid-solution under ammonia atmosphere. The preparation conditions were explored and the optimum nitridation temperature and holding time are 750 °C and 2 h, respectively. The photocatalytic properties of (GaN)1-x(ZnO)x with different Ga:Zn atomic ratios were investigated by degrading Rhodamine B under the visible light irradiation. The photocatalytic activity sequence is (GaN)1-x(ZnO)x (Ga:Zn = 1:2) > (GaN)1-x(ZnO)x (Ga:Zn = 1:3) > ZnO nanofibers > (GaN)1-x(ZnO)x (Ga:Zn = 1:4) > (GaN)1-x(ZnO)x (Ga:Zn = 1:1). The photocatalytic mechanism of the (GaN)1-x(ZnO)x hollow nanofibers was further studied by UV-vis diffuse reflectance spectra. The excellent photocatalytic performance of (GaN)1-x(ZnO)x hollow nanofibers was attributed to the narrow band gap and high surface area of porous nanofibers with hollow structure.

Crystal structure and physical properties of quaternary clathrates Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x} and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, Navida; Grytsiv, Andriy; Melnychenko-Koblyuk, Nataliya

2010-10-15

Three series of vacancy-free quaternary clathrates of type I, Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x}, and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}, have been prepared by reactions of elemental ingots in vacuum sealed quartz at 800 {sup o}C. In all cases cubic primitive symmetry (space group Pm3n, a{approx}1.1 nm) was confirmed for the clathrate phase by X-ray powder diffraction and X-ray single crystal analyses. The lattice parameters show a linear increase with increase in Ge for Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}. M atoms (Zn, Pd, Cu) preferably occupy the 6d site in random mixtures. No defects were observed formore » the 6d site. Site preference of Ge and Si in Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y} has been elucidated from X-ray refinement: Ge atoms linearly substitute Si in the 24k site whilst a significant deviation from linearity is observed for occupation of the 16i site. A connectivity scheme for the phase equilibria in the 'Ba{sub 8}Ge{sub 46}' corner at 800 {sup o}C has been derived and a three-dimensional isothermal section at 800 {sup o}C is presented for the Ba-Pd-Zn-Ge system. Studies of transport properties carried out for Ba{sub 8{l_brace}}Cu,Pd,Zn{r_brace}{sub x}Ge{sub 46-x} and Ba{sub 8}Zn{sub x}Si{sub y}Ge{sub 46-x-y} evidenced predominantly electrons as charge carriers and the closeness of the systems to a metal-to-insulator transition, fine-tuned by substitution and mechanical processing of starting material Ba{sub 8}Ge{sub 43}. A promising figure of merit, ZT {approx}0.45 at 750 K, has been derived for Ba{sub 8}Zn{sub 7.4}Ge{sub 19.8}Si{sub 18.8}, where pricey germanium is exchanged by reasonably cheap silicon. - Graphical abstract: Quaternary phase diagram of Ba-Pd-Zn-Ge system at 800 {sup o}C.« less

Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

NASA Astrophysics Data System (ADS)

Flores, Mauricio A.

2018-01-01

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

(Zn, Mg)2GeO4:Mn2+ submicrorods as promising green phosphors for field emission displays: hydrothermal synthesis and luminescence properties.

PubMed

Shang, Mengmeng; Li, Guogang; Yang, Dongmei; Kang, Xiaojiao; Peng, Chong; Cheng, Ziyong; Lin, Jun

2011-10-07

(Zn(1-x-y)Mg(y))(2)GeO(4): xMn(2+) (y = 0-0.30; x = 0-0.035) phosphors with uniform submicrorod morphology were synthesized through a facile hydrothermal process. X-Ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence (PL), and cathodoluminescence (CL) spectroscopy were utilized to characterize the samples. SEM and TEM images indicate that Zn(2)GeO(4):Mn(2+) samples consist of submicrorods with lengths around 1-2 μm and diameters around 200-250 nm, respectively. The possible formation mechanism for Zn(2)GeO(4) submicrorods has been presented. PL and CL spectroscopic characterizations show that pure Zn(2)GeO(4) sample shows a blue emission due to defects, while Zn(2)GeO(4):Mn(2+) phosphors exhibit a green emission corresponding to the characteristic transition of Mn(2+) ((4)T(1)→(6)A(1)) under the excitation of UV and low-voltage electron beam. Compared with Zn(2)GeO(4):Mn(2+) sample prepared by solid-state reaction, Zn(2)GeO(4):Mn(2+) phosphors obtained by hydrothermal process followed by high temperature annealing show better luminescence properties. In addition, codoping Mg(2+) ions into the lattice to substitute for Zn(2+) ions can enhance both the PL and CL intensity of Zn(2)GeO(4):Mn(2+) phosphors. Furthermore, Zn(2)GeO(4):Mn(2+) phosphors exhibit more saturated green emission than the commercial FEDs phosphor ZnO:Zn, and it is expected that these phosphors are promising for application in field-emission displays.

Trace element studies of rocks and soils from Oceanus Procellarum and Mare Tranquillitatis

NASA Technical Reports Server (NTRS)

Baedecker, P. A.; Schaudy, R.; Elzie, J. L.; Kimberlin, J.; Wasson, J. T.

1972-01-01

Neutron activation data on Zn, Ga, Ge, Cd, In and Ir are reported for six rocks and two soils from the Apollo 12 mission. Comparison of these and similar data for Apollo 11 samples indicates extralunar components in the 12070 and 10084 soils of about 1.0 and 1.1% expressed in terms of an assumed composition which is the same as the water-free portion of C1 chondrites. A relationship between the integrated flux of extralunar material and the increase in concentration of such material in the fines of the lunar regolith is derived. Apollo 12 rocks have concentrations of Zn, Ge, Cd, In and possibly Ir which are lower by factors of 60 or more, relative to terrestrial basalts. A mechanism is proposed for the late accretion of volatile-rich materials, including comets, in which a primitive terrestrial atmosphere is invoked to explain the significantly higher concentrations of such substances on the earth.

Design of Multifunctional Materials: Chalcogenides and Chalcopyrites

NASA Technical Reports Server (NTRS)

Singh, N. B.; Su, Ching Hua; Arnold, Brad; Choa, Fow-Sen

2017-01-01

There is a strong need for developing multifunctional materials to reduce the cost of applied material without compromising the performance of the detectors, devices and sensors. The materials design, processing, growth and fabrication of bulk and nanocrystals and fabrication into devices and sensors involve huge cost and resources including a multidisciplinary team of experts. Because of this reason, prediction of multifunctionality of materials before design and development should be evaluated. Chalcogenides and chalcopyrites are a very exciting class of materials for developing multifunctionality. Materials such as Gallium selenide GaSe and zinc selenide ZnSe have been proven to be excellent examples. GaSe is a layered material and very difficult to grow in large crystal. However, it's ternary and quaternary analogs such as thallium gallium selenide TlGaSe2, thallium gallium selenide sulfide TlGaSe2-xSs, thallium arsenic selenide Tl3AsSe3, silver gallium selenide AgGaGe3Se8, AgGaGe5Se12 and several others have shown great promise for multifunctionality. Several of these materials have shown good efficiency for frequency conversion (nonlinear optical NLO), electro-optic modulation, and acousto-optic tunable filters and imagers suitable for the visible, near-infrared wavelength, mid wave infrared (MWIR), long wave infrared (LWIR) and even up to Tera hertz wavelength (THW) regions. In addition, this class of materials have demonstrated low absorption coefficients and power handling capability in the systems. Also, these crystals do not require post growth annealing, show very large transparency range and fabricability.

IR Li2Ga2GeS6 nanocrystallized GeS2-Ga2S3-Li2S electroconductive chalcogenide glass with good nonlinearity

PubMed Central

Liu, Qiming; Zhang, Peng

2014-01-01

GeS2-Ga2S3-Li2S electroconductive glasses were prepared by the conventional melt-quenching method through carefully controlling the heating rate. Comparing with the reference of glass-forming region, our investigated GeS2-Ga2S3-Li2S system was extended to the cation ratio of 0–20% Li with around 40% Ga. GeS2-Ga2S3-Li2S glass-ceramics containing IR Li2Ga2GeS6 nonlinear nanocrystals were obtained by the more carefully controlled heating rate. Its optical nonlinearity was investigated by the Maker fringe measurements, the maximum second harmonic intensity was observed to be 0.35 of the reference Z-cut quartz. IR Li2Ga2GeS6 nonlinear crystals were directly obtained at the composition of 40GeS2-30GaS1.5-30LiS0.5. PMID:25030713

From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.

PubMed

Lu, Ming-Yen; Zhou, Xiang; Chiu, Cheng-Yao; Crawford, Samuel; Gradečak, Silvija

2014-01-22

We demonstrate a method to synthesize GaN-ZnGa2O4 core-shell nanowire and ZnGa2O4 nanotube arrays by a low-temperature hydrothermal process using GaN nanowires as templates. Transmission electron microscopy and X-ray photoelectron spectroscopy results show that a ZnGa2O4 shell forms on the surface of GaN nanowires and that the shell thickness is controlled by the time of the hydrothermal process and thus the concentration of Zn ions in the solution. Furthermore, ZnGa2O4 nanotube arrays were obtained by depleting the GaN core from GaN-ZnGa2O4 core-shell nanowire arrays during the reaction and subsequent etching with HCl. The GaN-ZnGa2O4 core-shell nanowires exhibit photoluminescence peaks centered at 2.60 and 2.90 eV attributed to the ZnGa2O4 shell, as well as peaks centered at 3.35 and 3.50 eV corresponding to the GaN core. We also demonstrate the synthesis of GaN-ZnGa2O4 heterojunction nanowires by a selective formation process as a simple route toward development of heterojunction nanodevices for optoelectronic applications.

Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

PubMed

Komolov, A S; Akhremtchik, S N; Lazneva, E F

2011-08-15

The paper reports the results on the interface formation of 5-10 nm thick conjugated layers of Cu-phthalocyanine (CuPc) with a number of solid surfaces: polycrystalline Au, (SiO(2))n-Si, ZnO(0 0 0 1), Si(1 0 0), Ge(1 1 1), CdS(0 0 0 1) and GaAs(1 0 0). The results were obtained using Auger electron spectroscopy (AES) and low-energy target current electron spectroscopy (TCS). The organic overlayers were thermally deposited in situ in UHV onto substrate surfaces. The island-like organic deposits were excluded from the analysis so that only uniform organic deposits were considered. In the cases of polycrystalline Au, Si(1 0 0) and Ge(1 1 1) substrates the AES peaks of the substrate material attenuated down to the zero noise level upon the increase of the CuPc film thickness of 8-10 nm. The peaks corresponding to oxygen atoms in the case of SiO(2) substrate, and to atoms from the ZnO, GaAs and CdS substrates were clearly registered in the AES spectra of the 8-10 nm thick CuPc deposits. The relative concentration of the substrate atomic components diffused into the film was different from their relative concentration at the pure substrate surface. The concentration of the substrate dopant atoms in the CuPc film was estimated as one atom per one CuPc molecule. Using the target current electron spectroscopy, it was shown that the substrate atoms admixed in the CuPc film account for the appearance of a new peak in the density of unoccupied electronic states. Formation of intermediate TCS spectra until the CuPc deposit reaches 2-3 nm was observed in the cases of GaAs(1 0 0), ZnO(0 0 0 1), Ge(1 1 1) surfaces. The intermediate spectra show a less pronounced peak structure different from the one typical for the CuPc films. It was suggested that the intermediate layer was formed by the CuPc molecules fully or partially decomposed due to the interaction with the relatively reactive semiconductor surfaces. Copyright © 2010 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasilyeva, I.G., E-mail: kamarz@niic.nsc.r; Nikolaev, R.E.; Verozubova, G.A.

Abstracts: The nonstoichiometry of ZnGeP{sub 2} has been determined based on the p-T dependences measured above ZnP{sub 2}-Ge samples in the temperature range of 980-1225 K by a high-sensitive and precise tensimetric static method with a quartz Bourdon gauge. Scanning of the compositional range 49-51 mol% ZnP{sub 2} in the closed system and construction of the p-T dependences were possible due to incongruent evaporation of ZnGeP{sub 2} and formation of volatile species Zn(g), P{sub 4}(g) and P{sub 2}(g). The maximum homogeneity range of the solid ZnGeP{sub 2} was determined between 50.03 and 49.61 mol% ZnP{sub 2} at a temperature ofmore » 1128 K, based on the inflection points on the p-T dependences, corresponding to transitions of the three-phase (solid-solid-vapor) equilibrium to a two-phase (solid-vapor) one and vice visa. The nonstoichiometry as the overall concentration of defects is considered to gain a better insight into the defect chemistry of ZnGeP{sub 2}. - Graphical abstract: The nonstoichiometry of ZnGeP{sub 2} on the T-x diagram of the ZnP{sub 2}-Ge system.« less

Analysis of Moderately Siderophile Elements in Angrites: Implications for Core Formation of the Angrite Parent Body

NASA Technical Reports Server (NTRS)

Righter, K.; Shirai, N.; Irving, A.J.

2009-01-01

Angrites are an enigmatic group of achondrites, that constitute the largest group of basalts not affiliated with the Moon, Mars or Vesta (HEDs). Chemically, angrites are exceptionally refractory element- enriched (e.g., Al, Ca) and volatile element-depleted (e.g., Na and K) achondrites. Highly volatile siderophile and chalcophile elements (Zn, Ge and Se) may be less depleted than alkalis and Ga taken to imply a fractionation of plagiophile elements. Core formation on the angrite parent body (APB) is not well understood due to the dearth of moderately siderophile element (Ga, Ge, Mo, Sb, W) data for angrites, with the exception of Ni and Co [2]. In particular, there are no data for Mo abundances of angrites, while Sb and W abundances are reported for only 3 angrites, and have not always been determined on the same sample. The recent increase in angrite numbers (13) has greatly increased our knowledge of the compositional diversity of the angrite parent body (APB). In this study, we report new Co, Ni, Ga, Mo, Sb and W abundances for angrites by laser ablation inductively coupled plasma mass spectrometry (ICP-MS) in order to place constraints on core formation of the APB.

Progress toward the development of dual junction GaAs/Ge solar cells

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Krut, D. D.; Cavicchi, B. T.; Ralph, E.; Chung, M.

1991-01-01

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1989-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Aging behavior of Au-based ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1988-01-01

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Impurity measurements in semiconductor materials using trace element accelerator mass spectrometry

NASA Astrophysics Data System (ADS)

McDaniel, F. D.; Datar, S. A.; Nigam, M.; Ravi Prasad, G. V.

2002-05-01

Accelerator mass spectrometry (AMS) is commonly used to determine the abundance ratios of long-lived isotopes such as 10B, 14C, 36Cl, 129I, etc. to their stable counterparts at levels as low as 10 -16. Secondary ion mass spectrometry (SIMS) is routinely used to determine impurity levels in materials by depth profiling techniques. Trace-element accelerator mass spectrometry (TEAMS) is a combination of AMS and SIMS, presently being used at the University of North Texas, for high-sensitivity (ppb) impurity analyses of stable isotopes in semiconductor materials. The molecular break-up characteristics of AMS are used with TEAMS to remove the molecular interferences present in SIMS. Measurements made with different substrate/impurity combinations demonstrate that TEAMS has higher sensitivity for many elements than other techniques such as SIMS and can assist with materials characterization issues. For example, measurements of implanted As in the presence of Ge in Ge xSi 1- x/Si is difficult with SIMS because of molecular interferences from 74GeH, 29Si 30Si 16O, etc. With TEAMS, the molecular interferences are removed and higher sensitivities are obtained. Measured substrates include Si, SiGe, CoSi 2, GaAs and GaN. Measured impurities include B, N, F, Mg, P, Cl, Cr, Fe, Ni, Co, Cu, Zn, Ge, As, Se, Mo, Sn and Sb. A number of measurements will be presented to illustrate the range and power of TEAMS.

Zinc and germanium in the sedimentary rocks of Gale Crater on Mars indicate hydrothermal enrichment followed by diagenetic fractionation

NASA Astrophysics Data System (ADS)

Berger, Jeff A.; Schmidt, Mariek E.; Gellert, Ralf; Boyd, Nicholas I.; Desouza, Elstan D.; Flemming, Roberta L.; Izawa, Matthew R. M.; Ming, Douglas W.; Perrett, Glynis M.; Rampe, Elizabeth B.; Thompson, Lucy M.; VanBommel, Scott J. V.; Yen, Albert S.

2017-08-01

Zinc and germanium enrichments have been discovered in sedimentary rocks in Gale Crater, Mars, by the Alpha Particle X-ray Spectrometer on the rover Curiosity. Concentrations of Zn (910 ± 840 ppm) and Ge (65 ± 58 ppm) are tens to hundreds of times greater than in Martian meteorites and estimates for average silicate Mars. Enrichments occur in diverse rocks including minimally to extensively altered basaltic and alkalic sedimentary rocks. The magnitude of the enrichments indicates hydrothermal fluids, but Curiosity has not discovered unambiguous hydrothermal mineral assemblages. We propose that Zn- and Ge-rich hydrothermal deposits in the source region were dispersed in siliciclastic sediments during transport into the crater. Subsequent diagenetic mobilization and fractionation of Zn and Ge is evident in a Zn-rich sandstone (Windjana; Zn 4000 ppm, Ge 85 ppm) and associated Cl-rich vein (Stephen; Zn 8000 ppm, Ge 60 ppm), in Ge-rich veins (Garden City; Zn 2200 ppm, Ge 650 ppm), and in silica-rich alteration haloes leached of Zn (30-200 ppm). In moderately to highly altered silica-rich rocks, Ge remained immobile relative to leached elements (Fe, Mn, Mg, and Ca), consistent with fluid interaction at pH ≪ 7. In contrast, crosscutting Ge-rich veins at Garden City suggest aqueous mobilization as Ge-F complexes at pH < 2.5. Multiple jarosite detections by the CheMin X-ray diffractometer and variable Zn concentrations indicate diagenesis of lower Mount Sharp bedrock under acidic conditions. The enrichment and fractionation of Zn and Ge constrains fluid events affecting Gale sediments and can aid in unraveling fluid histories as Curiosity's traverse continues.

Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

NASA Astrophysics Data System (ADS)

Lu, Xiangmeng; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro

2018-04-01

We fabricated a coupled multilayer cavity with a GaAs/Ge/GaAs sublattice reversal structure for terahertz emission application. Sublattice reversal in GaAs/Ge/GaAs was confirmed by comparing the anisotropic etching profile of an epitaxial sample with those of reference (113)A and (113)B GaAs substrates. The interfaces of GaAs/Ge/GaAs were evaluated at the atomic level by scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDX) mapping. Defect-free GaAs/Ge/GaAs heterostructures were observed in STEM images and the sublattice lattice was directly seen through atomic arrangements in EDX mapping. A GaAs/AlAs coupled multilayer cavity with a sublattice reversal structure was grown on the (113)B GaAs substrate after the confirmation of sublattice reversal. Smooth GaAs/AlAs interfaces were formed over the entire region of the coupled multilayer cavity structure both below and above the Ge layer. Two cavity modes with a frequency difference of 2.9 THz were clearly observed.

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Effect of Impurities on the Freezing Point of Zinc

NASA Astrophysics Data System (ADS)

Sun, Jianping; Rudtsch, Steffen; Niu, Yalu; Zhang, Lin; Wang, Wei; Den, Xiaolong

2017-03-01

The knowledge of the liquidus slope of impurities in fixed-point metal defined by the International Temperature Scale of 1990 is important for the estimation of uncertainties and correction of fixed point with the sum of individual estimates method. Great attentions are paid to the effect of ultra-trace impurities on the freezing point of zinc in the National Institute of Metrology. In the present work, the liquidus slopes of Ga-Zn, Ge-Zn were measured with the slim fixed-point cell developed through the doping experiments, and the temperature characteristics of the phase diagram of Fe-Zn were furthermore investigated. A quasi-adiabatic Zn fixed-point cell was developed with the thermometer well surrounded by the crucible with the pure metal, and the temperature uniformity of less than 20 mK in the region where the metal is located was obtained. The previous doping experiment of Pb-Zn with slim fixed-point cell was checked with quasi-adiabatic Zn fixed-point cell, and the result supports the previous liquidus slope measured with the traditional fixed-point realization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karayigit, A.I.; Bulut, Y.; Karayigit, G.

A total of 48 samples, feed coals (FCs), fly ashes (FAs) and bottom ashes (BAs), which were systematically collected once a week over an eight-week period from boiler units, B1-4 with 660 MW and B5-6 with 330 MW capacity from Soma power plant, have been evaluated for major and trace elements (Al, Ca, Fe, K, Mg, Mn, Na, Ti, S, As, B, Ba, Be, Bi, Cd, Co, Cr, Cu, Cs, Ga, Ge, Hf, Hg, Li, Mo, Nb, Ni, P, Pb, Rb, Sb, Sc, Se, Sn, Sr, Ta, Th, Tl, U, V, Y, Zn, Zr, and REEs) to get information onmore » behavior during coal combustion. This study indicates that some elements such as Hg, Bi, Cd, As, Pb, Ge, Tl, Sn, Zn, Sb, B show enrichments in FAs relative to the BAs in both group boiler units. In addition to these, Cs, Lu, Tm, and Ga in Units B1-4 and S in Units B5-6 also have enrichments in FAs. Elements showing enrichments in BAs in both group boiler units are Ta, Mn, Nb. In addition to these, Se, Ca, Mg, Na, Fe in Units B1-4 and Cu in Units B5-6 also have enrichments in BAs. The remaining elements investigated in this study have no clear segregation between FAs and BAs. Mass balance calculations with the two methods show that some elements, S, Ta, Hg, Se, Zn, Na, Ca in Units B1-4, and Hg, S, Ta, Se, P in Units B5-6, have volatile behavior during coal combustion in the Soma power plant. This study also implies that some elements, Sb and Tb in Units B1-4 and Sb in Units B5-6, have relatively high retention effects in the combustion residues from the Soma power plant.« less

Hybrid density functional study of band alignment in ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures.

PubMed

Wang, Zhenhai; Zhao, Mingwen; Wang, Xiaopeng; Xi, Yan; He, Xiujie; Liu, Xiangdong; Yan, Shishen

2012-12-05

The band alignment in ZnO-GaN and related heterostructures is crucial for uses in solar harvesting technology. Here, we report our density functional calculations of the band alignment and optical properties of ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures using a Heyd-Scuseria-Ernzerhof (HSE) hybrid functional. We found that the conventional GGA functionals underestimate not only the band gap but also the band offset of these heterostructures. Using the hybrid functional calculations, we show that the (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution has a direct band gap of about 2.608 eV, in good agreement with the experimental data. More importantly, this solid solution forms type-II band alignment with the host materials. A GaN-(Ga(1-x)Zn(x))(N(1-x)O(x))-ZnO core-shell solar cell model is presented to improve the visible light absorption ability and carrier collection efficiency.

Electroluminescence of ZnO-based semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Novodvorskii, O. A.; Lotin, A. A.; Panchenko, Vladislav Ya; Parshina, L. S.; Khaidukov, E. V.; Zuev, D. A.; Khramova, O. D.

2011-01-01

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm-2, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs.

Nonstoichiometry of ZnGeP 2 crystals probed by static tensimetric method

NASA Astrophysics Data System (ADS)

Vasilyeva, I. G.; Nikolaev, R. E.; Verozubova, G. A.

2010-09-01

The nonstoichiometry of ZnGeP 2 has been determined based on the p-T dependences measured above ZnP 2-Ge samples in the temperature range of 980-1225 K by a high-sensitive and precise tensimetric static method with a quartz Bourdon gauge. Scanning of the compositional range 49-51 mol% ZnP 2 in the closed system and construction of the p-T dependences were possible due to incongruent evaporation of ZnGeP 2 and formation of volatile species Zn(g), P 4(g) and P 2(g). The maximum homogeneity range of the solid ZnGeP 2 was determined between 50.03 and 49.61 mol% ZnP 2 at a temperature of 1128 K, based on the inflection points on the p-T dependences, corresponding to transitions of the three-phase (solid-solid-vapor) equilibrium to a two-phase (solid-vapor) one and vice visa. The nonstoichiometry as the overall concentration of defects is considered to gain a better insight into the defect chemistry of ZnGeP 2.

Continuation of comprehensive quality control of the itG 68Ge/68Ga generator and production of 68Ga-DOTATOC and 68Ga-PSMA-HBED-CC for clinical research studies.

PubMed

Amor-Coarasa, Alejandro; Kelly, James M; Gruca, Monika; Nikolopoulou, Anastasia; Vallabhajosula, Shankar; Babich, John W

2017-10-01

Performance of a second itG 68 Ge/ 68 Ga generator system and production of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were tested over one year as an accompaniment to a previously published study (J Nucl Med. 2016;57:1402-1405). Performance of a 1951MBq 68 Ge/ 68 Ga generator was characterized and the eluate used for preparation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC. Weekly elution profiles of 68 Ga elution yield and 68 Ge breakthrough were determined. 68 Ga elution yields averaged 82% (61.8-98.4%) and 68 Ge breakthrough averaged 0.002% (0.0007% to 0.004%). The radiochemical purities of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were determined by HPLC analysis to be >98% and specific activity was 12.6 and 42GBq/μmol, respectively. 68 Ge contamination in the product was under the detection limit (0.00001%). Final sterile, pyrogen-free formulation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC in physiologic saline with 5%-7% ethanol was achieved. Performance of a 68 Ge/ 68 Ga generator was studied over one year with satisfactory results. The generator eluate was used to synthesize 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC on a routine basis in high purity. Copyright © 2017. Published by Elsevier Inc.

Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

NASA Astrophysics Data System (ADS)

Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

Tunable photoluminescent metal-organic-frameworks and method of making the same

DOEpatents

Nenoff, Tina M.; Sava Gallis, Dorina Florentina; Rohwer, Lauren E.S.

2017-08-22

The present disclosure is directed to new photoluminescent metal-organic frameworks (MOFs). The newly developed MOFs include either non rare earth element (REE) transition metal atoms or limited concentrations of REE atoms, including: Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Ru, Ag, Cd, Sn, Sb, Ir, Pb, Bi, that are located in the MOF framework in site isolated locations, and have emission colors ranging from white to red, depending on the metal concentration levels and/or choice of ligand.

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Thermoelectric properties of heavily GaP- and P-doped Si0.95Ge0.05

NASA Astrophysics Data System (ADS)

Yamashita, Osamu

2001-06-01

The Seebeck coefficient S, the electrical resistivity ρ and the thermal conductivity κ of Si0.95Ge0.05 samples doped with 0.4 at. % P and/or 0.5-2.0 mol % GaP, which were prepared by a conventional arc melting method, were measured as functions of GaP content and temperature T in the range from 323 to 1208 K. When multidoped with P and GaP, Ga tends to segregate more strongly with Ge to the grain boundaries than P, while when doped with GaP alone, both P and Ga segregate equally strongly with Ge. For multidoped samples, the S values at 323 K have a minimum at 1.0 mol % GaP and then increase with additional GaP, while the values of ρ and κ decrease monotonically with increasing GaP content. The optimum additional content of GaP that gives the largest thermoelectric figures of merit (ZT=S2T/κρ) for multidoped n-type Si0.95Ge0.05 samples was 1.5 mol %, which is slightly less than the 2.0 mol % of GaP added to Si0.8Ge0.2 alloy by hot pressing. The ZT value for multidoped Si0.95Ge0.05 with an optimum content of GaP increases linearly with temperature, and at 1073 K is 18% higher than that obtained previously for Si0.95Ge0.05 doped with only 0.4 at. % P. At 1173 K the ZT value is 1.16, which corresponds to 95% of that obtained previously at the corresponding temperature for Si0.8Ge0.2 alloy doped with 2.0 mol % GaP.

Growth and characterization of BaZnGa

DOE PAGES

Jo, Na Hyun; Lin, Qisheng; Nguyen, Manh Cuong; ...

2017-10-20

In this paper, we report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba–Zn–Ga system. Single crystals of BaZnGa can be grown out of excess Ba–Zn and adopt a tI36 structure type. There are three unique Ba sites and three M = Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Finally, temperature-dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronicmore » or magnetic phase transitions between 1.8 and 300 K.« less

Trace elements quantified by the APXS on Mars

NASA Astrophysics Data System (ADS)

Gellert, R.; Berger, J. A.; Boyd, N.; O'Connell-Cooper, C.; Desouza, E.; Thompson, L. M.; VanBommel, S.; Yen, A.

2017-12-01

The APXS accurately quantifies many trace elements within the dime-sized sample: Ni, Cu, Zn, Ga, Ge, Pb, Br, Se, As, and Y with 20 ppm detection limit (DL) and Rb, Sr, Zr, Co, Cr, and Mn with 200 ppm DL. Together with the major and minor elements, this gives important constraints for a variety of formation processes of the investigated soils, floats or extensive bedrock on Mars. The global soil, found at all rover landing sites, was used to define an average Mars value for Ni, Zn, Cr and Mn, with a consistent value of Fe/Mn 50 for soils and igneous rocks. All other APXS trace elements are below DL. Strong enrichments or depletions can both give evidence for the formation processes and link together groups of rocks and indicate their common diagenetic origin. Felsic rocks at Gale and Gusev have Cr, Ni and Zn far below soil, indicating their likely igneous origin. Further, similarly low values are found in elevated silica samples in the Murray Fm. at Gale where these elements have been mobilized and leached by fluids. High Sr and Ga was found in the host rock surrounding the Garden City vein system, which contains also high Ge, Mn and Cu, indicating mobilization in high temperature and/or acidic fluids after the Murray was lithified. The fracture fill sample Stephen at Windjana is high in Zn, Co and Cu. Germanium is enriched in the Murray Fm with very consistent values of about 100 ppm over many kilometers and 200 meters elevation, similar to perviously found bedrock at Yellowknife Bay and Windjana in Gale. Zinc is highly elevated but changes significantly with elevation in Murray, often correlated with Fe/Mn, possibly indicating changing redox conditions. Pb and Se are highly enriched at Pahrump (150, 75 ppm, resp.), drop first to low values and increase again uphill towards HematiteRidge. Nodules found at Pahrump show striking evidence for (Mg, Ni)-sulfates with Nickel up to 4% in the sulfates. All together these trends might indicate hydrothermal activity. The MER APXS instruments with somewhat higher DL found similar patterns. Elevated Ge was found at Home plate, Gusev crater, and at the rim of Endeavour crater at Meridiani Planum. Together with detailed investigations of SNC meteorites, the APXS detected trace elements supplement the bulk chemistry significantly and allow new insights into the formation processes encountered on Mars

Electroluminescence of ZnO-based semiconductor heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya

2011-01-31

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

A Monte Carlo study of primary electron production inside photoconductors for digital mammography and indications of material suitability

NASA Astrophysics Data System (ADS)

Sakellaris, T.; Spyrou, G.; Panayiotakis, G.; Tzanakos, G.

2010-08-01

Materials like a-Se, a-As2Se3, GaSe, GaAs, Ge, CdTe, CdZnTe, Cd0.8Zn0.2Te, ZnTe, PbO, TlBr, PbI2 and HgI2 are possible photoconductors for direct conversion digital mammography detectors. The physical characteristics of primary electrons, such as their number, energies, direction angles and spatial distributions, strongly affect the characteristics of the final signal and hence image quality. In previous work, a Monte Carlo model has been developed that simulates the generation of primary electrons inside these materials for x-ray spectra in the mammographic energy range. Using this model the energy, angular and spatial distributions of primary electrons have been studied. For the case of CdTe, CdZnTe, Cd0.8Zn0.2Te and ZnTe, an investigation was also made concerning the dependence of the primary electron production on the incident x-ray energy. In this paper, this investigation has been extended to include the rest of the photoconducting materials. The investigation is realized studying the number of primary electrons produced along with the escaping of photons (both incident and fluorescent) and the number of fluorescent photons emitted for 39 monoenergetic x-ray spectra with energies between 2 and 40 keV. The information obtained from the overall investigation of the primary signal in the various photoconductors gives some good indications of the suitability of PbI2 and HgI2.

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Synthesis of ZnGa2O4 Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

PubMed Central

2010-01-01

In this paper, ZnGa2O4 hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga2O3 nanowires were synthesized and employed as templates for the growth of ZnGa2O4 nanocombs; then, the as-prepared Ga2O3 nanowires were reacted with ZnO vapor to form ZnGa2O4 nanocombs. Before the reaction, the Au nanoparticles were deposited on the surfaces of Ga2O3 nanowires and used as catalysts to control the teeth growth of ZnGa2O4 nanocombs. The as-prepared ZnGa2O4 nanocombs were highly crystallized with cubic spinel structure. From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa2O4 nanocombs, which make it promising application as an optical material. PMID:20802787

Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing

NASA Astrophysics Data System (ADS)

Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

2018-05-01

In this study, Ga0.6Sb0.4 thin films were grown on quartz and Ge(100) 1° off-axis substrates by RF magnetron sputtering at 500 °C. Ga0.6Sb0.4/Ge(100) shows n-type conductivity at room temperature (RT) and p-type conductivity at low temperatures, whereas undoped GaSb thin films exhibit p-type conductivity, irrespective of their growth methods and conditions. Their electrical properties were determined by rapid thermal annealing, which revealed that Ga0.6Sb0.4/Ge(100) contains two types of acceptors and two types of donors. The acceptors are considered to be GaSb and electrically active sites on dislocations originating at the Ga0.6Sb0.4/Ge(100) interface, while donors are believed to be Gai and electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface. In these acceptors and donors, the shallow donor concentration is higher than the shallow acceptor concentration, and the shallow donor level is deeper than the shallow acceptor level. Thus, we concluded that Ga0.6Sb0.4/Ge(100) shows n-type conductivity at RT due to electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface and native defects originating from excess Ga.

Structure and Properties of Modified and Charge-Compensated Chalcogenide Glasses in the Na/Ba-Ga-Ge Selenide System

NASA Astrophysics Data System (ADS)

Mao, Alvin W.

Chalcogenide glasses exhibit unique optical properties such as infrared transparency owing to the low-phonon energies, optical non-linearity, and photo-induced effects that have important consequences for a wide range of technological applications. However, to fully utilize these properties, it is necessary to better understand the atomic-scale structure and structure-property relationships in this important class of materials. Of particular interest in this regard are glasses in the stoichiometric system Na2Se/BaSe--Ga 2Se3--GeSe2 as they are isoelectronic with the well-studied, oxide glasses of the type M2O(M'O)--Al 2O3--SiO2 (M = alkali, M' = alkaline earth). This dissertation investigates the structure of stoichiometric Na 2Se/BaSe--Ga2Se3--GeSe2 and off-stoichiometric BaSe--Ga2Se3--GeSe 2+/-Se glasses using a combination of Fourier-transform Raman and solid state nuclear magnetic resonance (NMR) spectroscopies. The spectroscopic data is then compared to composition-dependent trends in physical properties such as density, optical band gap, glass transition temperature, and melt fragility to develop predictive structural models of the short- and intermediate-range order in the glass network. These models significantly improve our current understanding of the effects of modifier addition on the structure and properties of chalcogenide glasses, and thus enable a more efficient engineering of these highly functional materials for applications as solid electrolytes in batteries or as optical components in infrared photonics. In general, the underlying stoichiometric Ga2Se3--GeSe 2 network consists primarily of corner-sharing (Ga/Ge)Se4 tetrahedra, where the coordination numbers of Ga, Ge, and Se are 4, 4, and 2, respectively. Some edge-sharing exists, but this configuration is relatively unstable and its concentration tends to decrease with any deviation from the GeSe2 composition. Due to the tetrahedral coordination of Ga, the initial addition of Se-deficient Ga2Se3 to GeSe 2 results in the preferential formation of Ge-Ge bonds, which are distributed such that the clustering of ethane-like (Se3)Ge-Ge(Se3) units is avoided to the maximum extent. This behavior is entirely consistent with the continuously-alloyed structural scenario of chalcogenide glasses. However, for contents of Ga2Se3 greater than about 25--30 mol%, the avoidance of Ga-Ga and mixed Ga-Ge bonds results in the appearance of three-coordinated Se as an alternate mechanism to accommodate the Se deficiency. The addition of either Na2Se or BaSe to Ga2Se 3--GeSe2 glasses introduces an ionic bonding character to an otherwise largely covalently bonded network. As a result, the structure responds by adopting characteristics of the charge-compensated structural scenario of oxide glasses. In the stoichiometric Na2Se/BaSe--Ga 2Se3--GeSe2 glasses, the ratio of Na 2Se/BaSe:Ga2Se3 = 1 serves as a chemical threshold, where the network consists predominantly of corner-sharing (Ga/Ge)e4 tetrahedra, and the charge on the Na(Ba) cations is balanced by the GaSe4- tetrahedra. For glasses with Na 2Se/BaSe:Ga2Se3 < 1, the addition of Se-deficient Ga2Se3 induces the formation of Ge-Ge bonds. However, for glasses with Na2Se/BaSe:Ga2Se3 > 1, the addition of Na2Se/BaSe results in the formation of non-bridging Se atoms, which break up the connectivity of the glassy network. The major difference between the modifying elements Na and Ba is that the high field strength of the Ba cation induces a higher degree of chemical disorder in the glass network. This conclusion is evidenced by the presence of some Ge-Ge bonds in BaSe--Ga2Se3--GeSe2 glasses even at the chemical threshold composition of BaSe:Ga2Se3 = 1. The structural duality of the Na2Se/BaSe--Ga2Se 3--GeSe2 system is best observed in the off-stoichiometric BaSe--Ga2Se3--GeSe2+/-Se glasses. Here, the removal of Se from a stoichiometric glass with BaSe:Ga2Se 3 > 1 results in Ge-Ge bonds, while its addition in excess of stoichiometry forms Se-Se bonds. Although such behavior is consistent with the continuously-alloyed structural model, it should be contrasted with the response of the network to the removal or addition of BaSe. In the latter case especially, the network responds with the formation of non-bridging Se atoms, which is reminiscent of the charge-compensated structural scenario. The aforementioned structural conclusions are supported by trends in physical properties. Of all the properties measured, the glass transition temperature Tg responds most predictably to changes in glass structure in the sense that the removal of heteropolar (Ga/Ge)-Se bonds from the glassy network consistently results in a decrease in Tg. Indeed, Tg is observed to be maximized around chemical threshold compositions that are expected to have a fully-connected network of (Ga/Ge)Se¬4 tetrahedra. The formation of homopolar Ge-Ge bonds causes Tg to drop by ~40--80 °C, while the formation of Se-Se and/or non-bridging Se causes Tg to decrease by at least 120 °C. Trends in density reflect both the packing efficiency of the structural units within the glassy network as well as the masses of the constituent elements, and are generally observed to increase or decrease monotonically. As a result, an increase in density is associated with: 1) the removal of inefficiently packed structural units such as edge-sharing tetrahedra, 2) the formation of efficiently packed units such as three-coordinated Se atoms, 3) the removal of lighter elements like Na, and 4) the addition of heavier elements like Ba. Optical band gap is related to the bonding character within the glassy network, and tends to decrease as the bonding character becomes increasingly metallic. Therefore, a decrease in optical band gap is observed with the formation of homopolar Ge-Ge bonds when Ga2Se3 is added to GeSe2. However, the stoichiometric BaSe--Ga2Se 3--GeSe2 glasses show an anomaly in this regard because optical band gap decreases with the addition of BaSe, and consequently the removal of Ge-Ge bonds. This observation was ascribed instead to the formation of Ba-Se bonds, which are associated with a lower bandgap compared to the (Ga/Ge)-Se bonds that they replace. Finally, there is no straightforward structural explanation for trends in fragility, because it is related to the number of structural configurations dynamically available to the supercooled liquid. In the binary Ga2Se3--GeSe2 glasses, the fragility tends to increase with the formation of homopolar Ge-Ge bonds, which is consistent with other chalcogenide systems in which fragility increases with the removal of heteropolar bonds within corner-sharing tetrahedra and pyramids. In the stoichiometric BaSe--Ga2Se3--GeSe2 glasses on the other hand, a shift in trend near the compositions where BaSe:Ga 2Se3 = 1 coincides with a structural shift between the formation of Ge-Ge bonds and Se-Se/non-bridging Se.

Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Hong-Ming; Ho, Hao-I; Tsai, Shi-Jane

2016-03-21

We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for themore » deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.« less

Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition

NASA Astrophysics Data System (ADS)

Mello, K. E.; Murarka, S. P.; Lu, T.-M.; Lee, S. L.

1997-06-01

Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge+ ions are employed to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2[001](100)∥GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ˜1200 eV Ge+ ions. Lowering the substrate temperature or reducing the Ge+ ion energy leads to CoGe2(100) orientation domination with CoGe2[100](010)∥GaAs[100](001) and CoGe2[100](001)∥GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge+ ions in the evaporant stream.

Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

NASA Astrophysics Data System (ADS)

Sims, P. E.; Wallace, P. M.; Xu, Chi; Poweleit, C. D.; Claflin, B.; Kouvetakis, J.; Menéndez, J.

2017-09-01

Monocrystalline alloys of GaAs and Ge with compositions (GaAs)yGe5-2y have been synthesized following a chemical vapor deposition approach that promotes the incorporation of Ga and As atoms as isolated donor-acceptor pairs. The structural and optical properties show distinct behavior relative to (GaAs)1-xGe2x counterparts produced by conventional routes. Strong band gap photoluminescence is observed in the 0.5-0.6 eV range for samples whose compositions approach the GaAsGe3 limit for isolated Ga-As pairs. In such samples, the Ge-like Raman modes appear at higher frequencies and are considerably narrower than those observed in samples with higher Ge concentrations. These results suggest that the growth mechanism may favor the formation of ordered phases comprising Ga-As-Ge3 tetrahedra. In contrast with the diamond-to-zincblende ordering transition previously reported for III-V-IV alloys, ordered structures built from Ga-As-Ge3 tetrahedra feature III-III and V-V pairs as third-nearest neighbors, and therefore both the III- and V-components are equally present in each of two fcc sublattices of the average diamond-like structure. These bonding arrangements likely lead to the observed optical response, indicating potential applications of these materials in mid-IR technologies integrated on Si.

Behaviors of Zn2GeO4 under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Shu-Wen, Yang; Fang, Peng; Wen-Tao, Li; Qi-Wei, Hu; Xiao-Zhi, Yan; Li, Lei; Xiao-Dong, Li; Duan-Wei, He

2016-07-01

The structural stability of Zn2GeO4 was investigated by in-situ synchrotron radiation angle dispersive x-ray diffraction. The pressure-induced amorphization is observed up to 10 GPa at room temperature. The high-pressure and high-temperature sintering experiments and the Raman spectrum measurement firstly were performed to suggest that the amorphization is caused by insufficient thermal energy and tilting Zn-O-Ge and Ge-O-Ge bond angles with increasing pressure, respectively. The calculated bulk modulus of Zn2GeO4 is 117.8 GPa from the pressure-volume data. In general, insights into the mechanical behavior and structure evolution of Zn2GeO4 will shed light on the micro-mechanism of the materials variation under high pressure and high temperature. Project supported by the Joint Fund of the National Natural Science Foundation of China and Chinese Academy of Sciences (Grant No. U1332104).

Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

PubMed

Wang, Cai-Feng; Hu, Bo

2017-10-01

ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

Electronic structure and optical properties of noncentrosymmetric LiGaGe2Se6, a promising nonlinear optical material

NASA Astrophysics Data System (ADS)

Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Ananchenko, L. N.; Isaenko, L. I.; Yelisseyev, A.; Krinitsin, P. G.; Khyzhun, O. Y.

2016-11-01

X-ray photoelectron core-level and valence-band spectra are measured for pristine and Ar+ ion-bombarded surfaces of LiGaGe2Se6 single crystal grown by Bridgman-Stockbarger technique. Further, electronic structure of LiGaGe2Se6 is elucidated from both theoretical and experimental viewpoints. Density functional theory (DFT) calculations are made using the augmented plane wave +local orbitals (APW+lo) method to study total and partial densities of states in the LiGaGe2Se6 compound. The present calculations indicate that the principal contributors to the valence band are the Se 4p states: they contribute mainly at the top and in the central portion of the valence band of LiGaGe2Se6, with also their significant contributions in its lower portion. The Ge 4s and Ge 4p states are among other significant contributors to the valence band of LiGaGe2Se6, contributing mainly at the bottom and in the central portion, respectively. In addition, the calculations indicate that the bottom of the conduction band is composed mainly from the unoccupied Ge s and Se p states. The present DFT calculations are supported experimentally by comparison on a common energy scale of the X-ray emission bands representing the energy distribution of the 4p states associated with Ga, Ge and Se and the XPS valence-band spectrum of the LiGaGe2Se6 single crystal. The main optical characteristics of the LiGaGe2Se6 compound are elucidated by the first-principles calculations.

Calculated defect levels in GaN and AlN and their pressure coefficients

NASA Astrophysics Data System (ADS)

Gorczyca, I.; Svane, A.; Christensen, N. E.

1997-03-01

Using the Green's function technique based on the linear muffin-tin orbital method in the atomic-spheres approximation we perform self-consistent calculations of the electronic structure of native defects and other impurities in cubic GaN and AlN. Vacancies, antisites and interstitials and some of the most common dopants such as Zn, Mg, Cd, C and Ge are investigated in different charge states. To examine the lattice relaxation effects the super-cell approach in connection with the full-potential linear muffin-tin-orbital method is applied to the aluminum vacancy and the nitrogen antisite in AlN. The influence of hydrostatic pressure on the energy positions of some defect states is also studied.

Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

NASA Astrophysics Data System (ADS)

Brammertz, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty

2006-05-01

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650 °C by organometallic vapor phase epitaxy on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy. All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B) structure at an energy of ~1.5 eV and a broad inner-band-gap (IB) structure at an energy of ~1.1 eV. Small strain in the thin GaAs films causes the B2B structure to be separated into a light-hole and a heavy-hole peak. At 2.5 K the good structural quality of the thin GaAs films on Ge can be observed from the narrow excitonic peaks. Peak widths of less than 1 meV are measured. GaAs films with thickness smaller than 200 nm show B2B PL spectra with characteristics of an n-type doping level of approximately 1018 at./cm3. This is caused by heavy Ge diffusion from the substrate into the GaAs at the heterointerface between the two materials. The IB structure observed in all films consists of two Gaussian peaks with energies of 1.04 and 1.17 eV. These deep trapping states arise from Ge-based complexes formed within the GaAs at the Ge-GaAs heterointerface, due to strong diffusion of Ge atoms into the GaAs. Because of similarities with Si-based complexes, the peak at 1.04 eV was identified to be due to a GeGa-GeAs complex, whereas the peak at 1.17 eV was attributed to the GeGa-VGa complex. The intensity of the IB structure decreases strongly as the GaAs film thickness is increased. PL intensity of undoped GaAs films containing antiphase domains (APDs) is four orders of magnitude lower than for similar films without APDs. This reduction in intensity is due to the electrically active Ga-Ga and As-As bonds at the boundaries between the different APDs. When the Si doping level is increased, the PL intensity of the APD-containing films is increased again as well. A film containing APDs with a Si doping level of ~1018 at./cm3 has only a factor 10 reduced intensity. We tentatively explain this observation by Si or Ge clustering at antiphase boundaries, which eliminates the effects of the Ga-Ga and As-As bonds. This assumption is confirmed by the fact that, at 77 K, the ratio between the intensity of the IB peak at 1.17 eV to the intensity of the peak at 1.04 eV is smaller than 1.4 for all films containing APDs, whereas it is larger than 1.4 for all films without APDs. This shows stronger clustering of Si or Ge in the material with APDs. For future electronic applications, Ge diffusion into the GaAs will have to be reduced. PL analysis will be a rapid tool for studying the Ge diffusion into the GaAs thin films.

Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

NASA Astrophysics Data System (ADS)

Mieda, Eiko; Maeda, Tatsuro; Miyata, Noriyuki; Yasuda, Tetsuji; Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki; Aoki, Takeshi; Yamamoto, Taketsugu; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Ogawa, Arito; Kikuchi, Toshiyuki; Kunii, Yasuo

2015-03-01

We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.

Room-Temperature Quantum Cascade Laser: ZnO/Zn1- x Mg x O Versus GaN/Al x Ga1- x N

NASA Astrophysics Data System (ADS)

Chou, Hung Chi; Mazady, Anas; Zeller, John; Manzur, Tariq; Anwar, Mehdi

2013-05-01

A ZnO/Zn1- x Mg x O-based quantum cascade laser (QCL) is proposed as a candidate for generation of THz radiation at room temperature. The structural and material properties, field dependence of the THz lasing frequency, and generated power are reported for a resonant phonon ZnO/Zn0.95Mg0.05O QCL emitting at 5.27 THz. The theoretical results are compared with those from GaN/Al x Ga1- x N QCLs of similar geometry. Higher calculated optical output powers [ {P}_{{ZnMgO}} = 2.89 mW (nonpolar) at 5.27 THz and 2.75 mW (polar) at 4.93 THz] are obtained with the ZnO/Zn0.95Mg0.05O structure as compared with GaN/Al0.05Ga0.95N QCLs [ {P}_{{AlGaN}} = 2.37 mW (nonpolar) at 4.67 THz and 2.29 mW (polar) at 4.52 THz]. Furthermore, a higher wall-plug efficiency (WPE) is obtained for ZnO/ZnMgO QCLs [24.61% (nonpolar) and 23.12% (polar)] when compared with GaN/AlGaN structures [14.11% (nonpolar) and 13.87% (polar)]. These results show that ZnO/ZnMgO material is optimally suited for THz QCLs.

Near Infrared-Emitting Cr3+/Eu3+ Co-doped Zinc Gallogermanate Persistence Luminescent Nanoparticles for Cell Imaging

NASA Astrophysics Data System (ADS)

Wang, Qiaoqiao; Zhang, Shuyun; Li, Zhiwei; Zhu, Qi

2018-02-01

Near infrared (NIR)-emitting persistent luminescent nanoparticles have been developed as potential agents for bioimaging. However, synthesizing uniform nanoparticles with long afterglow for long-term imaging is lacking. Here, we demonstrated the synthesis of spinel structured Zn3Ga2Ge2O10:Cr3+ (ZGGO:Cr3+) and Zn3Ga2Ge2O10:Cr3+,Eu3+ (ZGGO:Cr3+,Eu3+) nanoparticles by a sol-gel method in combination with a subsequent reducing atmosphere-free calcination. The samples were investigated via detailed characterizations by combined techniques of XRD, TEM, STEM, selected area electron diffraction, photoluminescence excitation (PLE)/photoluminescence (PL) spectroscopy, and temperature-dependent PL analysis. The single-crystalline nanoparticles are homogeneous solid solution, possessing uniform cubic shape and lateral size of 80-100 nm. Upon UV excitation at 273 nm, ZGGO:Cr3+,Eu3+ exhibited a NIR emission band at 697 nm (2E → 4A2 transition of distorted Cr3+ ions in gallogermanate), in the absence of Eu3+ emission. NIR persistent luminescence of the sample can last longer than 7200 s and still hold intense intensity. Eu3+ incorporation increased the persistent luminescence intensity and the afterglow time of ZGGO:Cr3+, but it did not significantly affect the thermal stability. The obtained ZGGO:Cr3+,Eu3+-NH2 nanoparticles possessed an excellent imaging capacity for cells in vitro.

Copper, zinc, gallium and germanium distributions in taenite lamellae of iron meteorites and their importance for cooling rate estimations

NASA Astrophysics Data System (ADS)

Braun-Dullaeus, Karl-Ulrich; Traxel, Kurt

1995-02-01

One method forestimating cooling rates of meteorite parent bodies is to model measured nickel distributions in taenite lamellae of iron meteorites. Goldstein and Ogilvie ( Geochim. Cosmochim. Acta29, 893, 1965) and Rasmussen ( Icarus45, 564, 1981) developed techniques based on this idea to examine the cooling history in the temperature range between ˜700 and ˜400°C. As a result of Instrumental Neutron Activation Analysis (INAA) Rasmussen et al. ( Meteoritics23, 105, 1988) postulated that some trace elements would also be good cooling rate indicators. They argued that elements with distinct diffusion behavior are sensitive to different temperature ranges. The new Heidelberg proton microprobe uses the method of Proton Induced X-ray Emission (PIXE) for elemental analysis. This microprobe is an appropriate instrument to measure distributions of trace elements with a spatial resolution of 2 μm. We demonstrated on the iron meteorites Cape York (Agpalilik), Toluca and Odessa that the elements copper, zinc, gallium and germanium imitate the profiles of nickel in taenite lamella. The interpretation of the Zn, Ga and Ge profiles leads to the conclusion that these elements undergo diffusion mechanisms comparable to those of Ni. The numerical simulation of Cu distributions with a simplified model points out that little new information can be obtained about the cooling history of the meteorites by modelling Cu profiles. To simulate Zn, Ga or Ge distributions, the use of ternary phase diagrams is necessary.

Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se 2 interface

DOE PAGES

Mezher, Michelle; Garris, Rebekah; Mansfield, Lorelle M.; ...

2016-11-11

In this study, the chemical structure of the Zn(O,S)/Cu(In,Ga)Se 2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se 2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH) 2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se 2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer,more » and the formation of S—In and/or S—Ga bonds at or close to the interface.« less

Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

NASA Technical Reports Server (NTRS)

Meier, D. L.; Szedon, J. R.; Bartko, J.; Chung, M. A.

1989-01-01

A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

Homologous compounds of type ARO3(ZnO)m in the system Ga-Sn-Zn-O

NASA Astrophysics Data System (ADS)

Eichhorn, Simon; Schmid, Herbert; Assenmacher, Wilfried; Mader, Werner

2017-02-01

Several members of hitherto unknown homologous compounds [Sn0.5Zn0.5]GaO3(ZnO)m (m=3-7) of the general formula ARO3(ZnO)m were prepared by solid state methods from the binary oxides in sealed Pt-tubes. UV-vis measurements confirm these compounds to be transparent oxides with an optical band gap in the UV region with Eg≈3 eV. Rietveld refinements on powder samples of [Sn0.5Zn0.5]GaO3(ZnO)m proved the compounds to be isostructural with InGaO3(ZnO)m, where In3+ on octahedral sites is replaced statistically by Sn4+ and Zn2+ in equal amounts preserving an average charge of 3+. Additionally, the structure of [Sn0.5Zn0.5]GaO3(ZnO)3 has been determined from flux-grown single crystals by X-ray diffraction (R 3 ̅ m , Z=3, a=3.2387(7) Å, c=41.78(1) Å, 19 parameters, 201 independent reflections, R1=0.047, wR2=0.074). The compound [Sn0.5Zn0.5]GaO3(ZnO)3 is isostructural with InGaO3(ZnO)3. [Sn0.5Zn0.5]GaO3(ZnO)3 was furthermore analyzed by High Angle Annular Dark Field (HAADF) scanning TEM and EELS spectroscopic imaging, supporting the structure model derived from X-ray diffraction data.

Effect of Ga doping and point defect on magnetism of ZnO

NASA Astrophysics Data System (ADS)

Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Qu, Lingfeng

2017-02-01

The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

NASA Astrophysics Data System (ADS)

Echresh, Ahmad; Chey, Chan Oeurn; Shoushtari, Morteza Zargar; Nur, Omer; Willander, Magnus

2014-11-01

We have fabricated, characterized, and compared ZnO nanorods/p-GaN and n-Zn0.94Ag0.06O nanorods/p-GaN light emitting diodes (LEDs). Current-voltage measurement showed an obvious rectifying behaviour of both LEDs. A reduction of the optical band gap of the Zn0.94Ag0.06O nanorods compared to pure ZnO nanorods was observed. This reduction leads to decrease the valence band offset at n-Zn0.94Ag0.06O nanorods/p-GaN interface compared to n-ZnO nanorods/p-GaN heterojunction. Consequently, this reduction leads to increase the hole injection from the GaN to the ZnO. From electroluminescence measurement, white light was observed for the n-Zn0.94Ag0.06O nanorods/p-GaN heterojunction LEDs under forward bias, while for the reverse bias, blue light was observed. While for the n-ZnO nanorods/p-GaN blue light dominated the emission in both forward and reverse biases. Further, the LEDs exhibited a high sensitivity in responding to UV illumination. The results presented here indicate that doping ZnO nanorods might pave the way to tune the light emission from n-ZnO/p-GaN LEDs.

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications

DOE PAGES

Park, Kwangwook; Beaton, Daniel; Steirer, Kenneth X.; ...

2017-01-27

Here, we investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in themore » underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.« less

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

A novel theoretical model for the temperature dependence of band gap energy in semiconductors

NASA Astrophysics Data System (ADS)

Geng, Peiji; Li, Weiguo; Zhang, Xianhe; Zhang, Xuyao; Deng, Yong; Kou, Haibo

2017-10-01

We report a novel theoretical model without any fitting parameters for the temperature dependence of band gap energy in semiconductors. This model relates the band gap energy at the elevated temperature to that at the arbitrary reference temperature. As examples, the band gap energies of Si, Ge, AlN, GaN, InP, InAs, ZnO, ZnS, ZnSe and GaAs at temperatures below 400 K are calculated and are in good agreement with the experimental results. Meanwhile, the band gap energies at high temperatures (T  >  400 K) are predicted, which are greater than the experimental results, and the reasonable analysis is carried out as well. Under low temperatures, the effect of lattice expansion on the band gap energy is very small, but it has much influence on the band gap energy at high temperatures. Therefore, it is necessary to consider the effect of lattice expansion at high temperatures, and the method considering the effect of lattice expansion has also been given. The model has distinct advantages compared with the widely quoted Varshni’s semi-empirical equation from the aspect of modeling, physical meaning and application. The study provides a convenient method to determine the band gap energy under different temperatures.

Interfacial Structure and Chemistry of GaN on Ge(111)

NASA Astrophysics Data System (ADS)

Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

2013-12-01

The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5∶4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and free of GeNx. Density functional theory based total energy calculations show that the interface bilayer contains Ge and Ga atoms, with no N atoms. The 5∶4 bilayer at the interface has a lower energy than a direct stacking of GaN on Ge(111) and enables the 5∶4 lattice-matching growth of GaN.

Comparative study of textured and epitaxial ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.

2000-06-01

ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.

X-ray photoelectron spectroscopy investigations of band offsets in Ga0.02Zn0.98O/ZnO heterojunction for UV photodetectors

NASA Astrophysics Data System (ADS)

Singh, Karmvir; Rawal, Ishpal; Punia, Rajesh; Dhar, Rakesh

2017-10-01

Here, we report the valence and conduction band offset measurements in pure ZnO and the Ga0.02Zn0.98O/ZnO heterojunction by X-Ray photoelectron spectroscopy studies for UV photodetector applications. For detailed investigations on the band offsets and UV photodetection behavior of Ga0.02Zn0.98O/ZnO heterostructures, thin films of pristine ZnO, Ga-doped ZnO (Ga0.02Zn0.98O), and heterostructures of Ga-doped ZnO with ZnO (Ga0.02Zn0.98O/ZnO) were deposited using a pulsed laser deposition technique. The deposited thin films were characterized by X-ray diffraction, atomic force microscopy, and UV-Vis spectroscopy. X-ray photoelectron spectroscopy studies were carried out on all the thin films for the investigation of valence and conduction band offsets. The valence band was found to be shifted by 0.28 eV, while the conduction band has a shifting of -0.272 eV in the Ga0.02Zn0.98O/ZnO heterojunction as compared to pristine ZnO thin films. All the three samples were analyzed for photoconduction behavior under UVA light of the intensity of 3.3 mW/cm2, and it was observed that the photoresponse of pristine ZnO (19.75%) was found to increase with 2 wt. % doping of Ga (22.62%) and heterostructured thin films (29.10%). The mechanism of UV photodetection in the deposited samples has been discussed in detail, and the interaction of chemisorbed oxygen on the ZnO surface with holes generated by UV light exposure has been the observed mechanism for the change in electrical conductivity responsible for UV photoresponse on the present deposited ZnO films.

Effect of PdZn film on the performance of green light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu Young; Lee, Sang-Jun; Park, Seong-Ju; Kim, Sunwoon; Kim, Je Won; Kim, Yong Chun

2008-08-01

PdZn was used to improve the electrical properties of p-GaN annealed at low activation temperature for high efficiency green light-emitting diodes (LEDs). A hole concentration of p-GaN annealed at 600 °C with PdZn was almost 28 times higher than that of p-GaN annealed at 800 °C without PdZn. SIMS analysis showed that hydrogen concentration in p-GaN annealed with PdZn is decreased compared to that without using PdZn because the PdZn enhances hydrogen desorption from the Mg-doped p-GaN film at low temperature. The green MQW LED annealed at 600 °C using PdZn showed improved electrical characteristic and optical output power compared to that annealed at 800 °C without using PdZn. These results are attributed to the increase of hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and the decrease in thermal damage of MQW at low activation temperature.

In-situ crystallization of GeTe\\GaSb phase change memory stacked films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velea, A., E-mail: alin.velea@psi.ch; National Institute of Materials Physics, RO-077125 Magurele, Ilfov; Borca, C. N.

2014-12-21

Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C,more » the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.« less

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

PubMed Central

2017-01-01

In this work, we demonstrate that a preferential Ga-for-Zn cation exchange is responsible for the increase in photoluminescence that is observed when gallium oleate is added to InZnP alloy QDs. By exposing InZnP QDs with varying Zn/In ratios to gallium oleate and monitoring their optical properties, composition, and size, we conclude that Ga3+ preferentially replaces Zn2+, leading to the formation of InZnP/InGaP core/graded-shell QDs. This cation exchange reaction results in a large increase of the QD photoluminescence, but only for InZnP QDs with Zn/In ≥ 0.5. For InP QDs that do not contain zinc, Ga is most likely incorporated only on the quantum dot surface, and a PL enhancement is not observed. After further growth of a GaP shell and a lattice-matched ZnSeS outer shell, the cation-exchanged InZnP/InGaP QDs continue to exhibit superior PL QY (over 70%) and stability under long-term illumination (840 h, 5 weeks) compared to InZnP cores with the same shells. These results provide important mechanistic insights into recent improvements in InP-based QDs for luminescent applications. PMID:28706347

Nuclear data sheets update for A = 80*

NASA Astrophysics Data System (ADS)

Singh, Balraj

1992-08-01

Nuclear spectroscopic information for known nuclides of mass number 80 (Zn, Ga, Ge, As, Se, br, Kr, Rb, Sr, Y, Zr) have been evaluated and presented together with adopted energies and J π of levels in these nuclei. No data are yet available for excited states in 80Zn and 80Y. This evaluation represents a revision of earlier ones (82Si20, 75Gr19). No data are available for 80Ni, but calculations of % β- n and T 1/2 (g.s.) using RPA method have been reported by 89Kr02. A severe disagreement is noted in the systematics (85Wa02) and measured (82De36, 81Li12) Q( ɛ) of 80Y decay. A remeasurement of this value is required to clarify the difference of about 2 Mev.

Temperature influence on luminescent coupling efficiency in concentrator MJ SCs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shvarts, Maxim, E-mail: shvarts@scell.ioffe.ru; Emelyanov, Viktor; Mintairov, Mikhail

2015-09-28

In the work, presented are the results of investigation of temperature dependencies of the luminescent coupling effectiveness in lattice-matched (LM) GaInP/GaAs/Ge and metamorphic (MM) GaInP/GaInAs/Ge solar cells. The “ordinary” luminescent coupling effectiveness rise has been observed with temperature decrease for GaAs-Ge, GaInP-GaInAs and GaInAs-Ge pairs of subcells, and its limiting values have been defined. A “reverse” behavior of the luminescent coupling effectiveness for the GaInP-GaAs pair has been found, determined emittance potential drop of wideband GaInP p-n junction. It is shown that the established “unusual” behavior of the LC efficiency may be determined by the presence of thermalized centers ofmore » non-radiative recombination of charge carriers for the GaInP subcell in GaInP/GaAs/Ge LM structure. Estimation of characteristic parameters for the nonradiative recombination processes in wideband GaInP p-n junction has been carried out, and values for the energy of the nonradiative center thermalization (E{sub nrad2} =79.42meV) and for the activation energy of nonradiative band-to-band recombination (E{sub A}=33.4meV) have been obtained.« less

Luminescence studies of laser MBE grown GaN on ZnO nanostructures

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Kapoor, Ashok K.; Tandon, R. P.; Gupta, Vinay

2017-08-01

GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE) technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si (100) substrates. The ZnO nanostructures were grown on Si (100) substrate using high pressure assisted Pulsed laser deposition technique in inert gas ambience. Discrete nanostructured morphology of ZnO was obtained using the PLD growth on Si substrates. Photoluminescence studies performed on the prepared GaN/Sapphire and GaN/ZnO-NS/Si systems, revealed a significant PL enhancement in case of GaN/ZnO-NS/Si system compared to the former. The hexagonal nucleation sites provided by the ZnO nanostructures strategically enhanced the emission of GaN film grown by Laser MBE Technique at relatively lower temperature of 700°C. The obtained results are attractive for the realization of highly luminescent GaN films on Si substrate for photonic devices.

ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

DOEpatents

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20

A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

NO2 Gas Sensing Properties of Multiple Networked ZnGa2O4 Nanorods Coated with TiO2.

PubMed

An, Soyeon; Park, Sunghoon; Ko, Hyunsung; Jin, Changhyun; Lee, Chongmu

2015-01-01

The NO2 gas sensing properties of ZnGa2O4-TiO2 heterostructure nanorods was examined. ZnGa2O4-core/TiO2-shell nanorods were fabricated by the thermal evaporation of a mixture of Zn and GaN powders and the sputter deposition of TiO2. Multiple networked ZnGa2O4-core/TiO2-shell nanorod sensors showed the response of 876% at 10 ppm NO2 at 300 degrees C. This response value at 10 ppm NO2 is approximately 4 times larger than that of bare ZnGa2O4 nanorod sensors. The response values obtained by the ZnGa2O4-core/TiO2-shell nanorods in this study are more than 13 times higher than those obtained previously by the SnO2-core/ZnO-shell nanofibers at 5% NO2. The significant enhancement in the response of ZnGa2O4 nanorods to NO2 gas by coating them with TiO2 can be explained based on the space-charge model.

Hydrogen-impurity complexes in III V semiconductors

NASA Astrophysics Data System (ADS)

Ulrici, W.

2004-12-01

This review summarizes the presently available knowledge concerning hydrogen-impurity complexes in III-V compounds. The impurities form shallow acceptors on group III sites (Be, Zn, Cd) and on group V sites (C, Si, Ge) as well as shallow donors on group V sites (S, Se, Te) and on group III sites (Si, Sn). These complexes are mainly revealed by their hydrogen stretching modes. Therefore, nearly all information about their structure and dynamic properties is derived from vibrational spectroscopy. The complexes of shallow impurities with hydrogen have been most extensively investigated in GaAs, GaP and InP. This holds also for Mg-H in GaN. The complexes exhibit a different microscopic structure, which is discussed in detail. The isoelectronic impurity nitrogen, complexed with one hydrogen atom, is investigated in detail in GaAs and GaP. Those complexes can exist in different charge states. The experimental results such as vibrational frequencies, the microscopic structure and the activation energy for reorientation for many of these complexes are in very good agreement with results of ab initio calculations. Different types of oxygen-hydrogen complexes in GaAs and GaP are described, with one hydrogen atom or two hydrogen atoms bonded to oxygen. Three of these complexes in GaAs were found to be electrically active.

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

NASA Astrophysics Data System (ADS)

Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

2018-02-01

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor)

2017-01-01

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Production and in vivo antioxidant activity of Zn, Ge, Se-enriched mycelia by Cordyceps sinensis SU-01.

PubMed

Zheng, Lan; Hao, Long; Ma, Hua; Tian, Chengye; Li, Tong; Sun, Xinyi; Jia, Mengshi; Jia, Le

2014-09-01

Cordyceps sinensis, a traditionally edible and medicinal fungus in China, cannot be artificially solid-cultured. Zinc (Zn), germanium (Ge), and selenium (Se) are the essential trace elements for human body. In this work, C. sinensis SU-01 was cultivated in liquid medium simultaneously containing Zn, Ge, and Se. The bioactive ingredients and in vivo antioxidant activities of Zn, Ge, Se-enriched mycelia (ZGSM) of C. sinensis SU-01 were investigated. Under the determined conditions, the Zn, Ge, and Se contents of ZGSM were 2543.16 ± 158.92, 1873.85 ± 81.82, and 1260.16 ± 107.12 μg/g, respectively. The optimal concentrations of Zn, Ge, and Se had a positive effect on biosynthesis of protein, polysaccharide, cordycepic acid, and amino acids. The activities of glutathione peroxidase (GSH-Px) and superoxide dismutase (SOD) of mice blood were 3.72 ± 0.15 and 28.74 ± 2.53 % higher than that of control, respectively, and the content of malondialdehyde (MDA) was 41.01 ± 3.66 % lower than that of control.

Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode.

PubMed

Yao, Yu-Feng; Lin, Chun-Han; Hsieh, Chieh; Su, Chia-Ying; Zhu, Erwin; Yang, Shaobo; Weng, Chi-Ming; Su, Ming-Yen; Tsai, Meng-Che; Wu, Shang-Syuan; Chen, Sheng-Hung; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

2015-12-14

The combined effects of a few mechanisms for emission efficiency enhancement produced in the overgrowth of the transparent conductor layer of Ga-doped ZnO (GaZnO) on a surface Ag-nanoparticle (NP) coated light-emitting diode (LED), including surface plasmon (SP) coupling, current spreading, light extraction, and contact resistivity reduction, are demonstrated. With a relatively higher GaZnO growth temperature (350 °C), melted Ag NPs can be used as catalyst for forming GaZnO nanoneedles (NNs) through the vapor-liquid-solid growth mode such that light extraction efficiency can be increased. Meanwhile, residual Ag NPs are buried in a simultaneously grown GaZnO layer for inducing SP coupling. With a relatively lower GaZnO growth temperature (250 °C), all the Ag NPs are preserved for generating a stronger SP coupling effect. By using a thin annealed GaZnO interlayer on p-GaN before Ag NP fabrication, the contact resistivity at the GaZnO/p-GaN interface and hence the overall device resistance can be reduced. Although the use of this interlayer blue-shifts the localized surface plasmon resonance peak of the fabricated Ag NPs from the quantum well emission wavelength of the current study (535 nm) such that the SP coupling effect becomes weaker, it is useful for enhancing the SP coupling effect in an LED with a shorter emission wavelength.

Optical properties of Ag- and AgI-doped Ge-Ga-Te far-infrared chalcogenide glasses

NASA Astrophysics Data System (ADS)

Cheng, Ci; Wang, Xunsi; Xu, Tiefeng; Sun, Lihong; Pan, Zhanghao; Liu, Shuo; Zhu, Qingde; Liao, Fangxing; Nie, Qiuhua; Dai, Shixun; Shen, Xiang; Zhang, Xianghua; Chen, Wei

2016-05-01

Te-based glasses are ideal material for life detection and infrared-sensing applications because of their excellent far-infrared properties. In this study, the influence of Ag- and AgI- doped Te-based glasses were discussed. Thermal and optical properties of the prepared glasses were evaluated using X-ray diffraction, differential scanning calorimetry, and Fourier transform infrared spectroscopy. Results show that these glass samples have good amorphous state and thermal stability. However, Ge-Ga-Te-Ag and Ge-Ga-Te-AgI glass systems exhibit completely different in optical properties. With an increase of Ag content, the absorption cut-off edge of Ge-Ga-Te-Ag glass system has a red shift. On the contrary, a blue shift appears in Ge-Ga-Te-AgI glass system with an increase of AgI content. Moreover, the transmittance of Ge-Ga-Te-Ag glass system deteriorates while that of Ge-Ga-Te-AgI glass system ameliorates. All glass samples have wide infrared transmission windows and the far-infrared cut-off wavelengths of these glasses are beyond 25 μm. The main absorption peaks of these glasses are eliminated through a purifying method.

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Chen, Chi-Heng; Yang, Ya-Yu; Sheu, Jinn-Kong; Lai, Li-Wen

2011-06-06

We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.

A new 68Ge/68Ga generator system using an organic polymer containing N-methylglucamine groups as adsorbent for 68Ge.

PubMed

Nakayama, M; Haratake, M; Ono, M; Koiso, T; Harada, K; Nakayama, H; Yahara, S; Ohmomo, Y; Arano, Y

2003-01-01

A macroporous styrene-divinylbenzene copolymer containing N-methylglucamine groups was selected for a new 68Ge/68Ga generator system. This resin packed into a column effectively adsorbed the parent nuclide 68Ge. The daughter 68Ga was eluted from the resin with a solution of a low-affinity gallium chelating ligand such as citric or phosphoric acid. The 68Ge leakage was less than 0.0004% of the 68Ge adsorbed on the resin. By simple mixing of transferrin and desferoxamine conjugated HSA and IgG with the eluate from the column, 68Ga-labeling was completed in high yield. Copyright 2002 Elsevier Science Ltd.

Effects of Zn2+ and Pb2+ dopants on the activity of Ga2O3-based photocatalysts for water splitting.

PubMed

Wang, Xiang; Shen, Shuai; Jin, Shaoqing; Yang, Jingxiu; Li, Mingrun; Wang, Xiuli; Han, Hongxian; Li, Can

2013-11-28

Zn-doped and Pb-doped β-Ga2O3-based photocatalysts were prepared by an impregnation method. The photocatalyst based on the Zn-doped β-Ga2O3 shows a greatly enhanced activity in water splitting while the Pb-doped β-Ga2O3 one shows a dramatic decrease in activity. The effects of Zn(2+) and Pb(2+) dopants on the activity of Ga2O3-based photocatalysts for water splitting were investigated by HRTEM, XPS and time-resolved IR spectroscopy. A ZnGa2O4-β-Ga2O3 heterojunction is formed in the surface region of the Zn-doped β-Ga2O3 and a slower decay of photogenerated electrons is observed. The ZnGa2O4-β-Ga2O3 heterojunction exhibits type-II band alignment and facilitates charge separation, thus leading to an enhanced photocatalytic activity for water splitting. Unlike Zn(2+) ions, Pb(2+) ions are coordinated by oxygen atoms to form polyhedra as dopants, resulting in distorted surface structure and fast decay of photogenerated electrons of β-Ga2O3. These results suggest that the Pb dopants act as charge recombination centers expediting the recombination of photogenerated electrons and holes, thus decreasing the photocatalytic activity.

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Shi, Zhifeng; Yan, Long; Li, Pengchong; Zhang, Baolin; Du, Guotong

2016-02-01

O-polar ZnO films were grown on N-polar p-GaN/sapphire substrates by photo-assisted metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based O-polar n-ZnO/N-polar p-GaN were proposed and fabricated. It is experimentally demonstrated that the interface polarization of O-polar n-ZnO/N-polar p-GaN heterojunction can shift the location of the depletion region from the interface deep into the ZnO side. When a forward bias is applied to the proposed diode, a strong and high-purity ultraviolet emission located at 385 nm can be observed. Compared with conventional Zn-polar n-ZnO/Ga-polar p-GaN heterostructure diode, the ultraviolet emission intensity of the proposed heterojunction diode is greatly enhanced due to the presence of polarization-induced inversion layer at the ZnO side of the heterojunction interface. This work provides an innovative path for the design and development of ZnO-based ultraviolet diode.

Zinc diffusion in gallium arsenide and the properties of gallium interstitials

NASA Astrophysics Data System (ADS)

Bracht, H.; Brotzmann, S.

2005-03-01

We have performed zinc diffusion experiments in gallium arsenide at temperatures between 620°C and 870°C with a dilute Ga-Zn source. The low Zn partial pressure established during annealing realizes Zn surface concentrations of ⩽2×1019cm-3 , which lead to the formation of characteristic S-shaped diffusion profiles. Accurate modeling of the Zn profiles, which were measured by means of secondary ion mass spectroscopy, shows that Zn diffusion under the particular doping conditions is mainly mediated by neutral and singly positively charged Ga interstitials via the kick-out mechanism. We determined the temperature dependence of the individual contributions of neutral and positively charged Ga interstitials to Ga diffusion for electronically intrinsic conditions. The data are lower than the total Ga self-diffusion coefficient and hence consistent with the general interpretation that Ga diffusion under intrinsic conditions is mainly mediated by Ga vacancies. Our results disprove the general accepted interpretation of Zn diffusion in GaAs via doubly and triply positively charged Ga interstitials and solves the inconsistency related to the electrical compensation of the acceptor dopant Zn by the multiply charged Ga interstitials.

Low temperature Zn diffusion for GaSb solar cell structures fabrication

NASA Technical Reports Server (NTRS)

Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

1995-01-01

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com; Ozcan, Yusuf; Orujalipoor, Ilghar

2016-06-07

In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactivemore » growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.« less

Structural and optical characterization of ZnO/Mg(x)Zn(1-x)O multiple quantum wells based random laser diodes.

PubMed

Jiang, Qike; Zheng, He; Wang, Jianbo; Long, Hao; Fang, Guojia

2012-12-01

Two kinds of laser diodes (LDs) comprised of ZnO/Mg(x)Zn(1-x)O (ZnO/MZO) multiple quantum wells (MQWs) grown on GaN (MQWs/GaN) and Si (MQWs/Si) substrates, respectively, have been constructed. The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that with MQWs/Si does not. In the MQWs/Si, ZnO/MZO MQWs consist of nanoscaled crystallites, and the MZO layers undergo a phase separation of cubic MgO and hexagonal ZnO. Moreover, the Mg atom predominantly locates in the MZO layers along with a significant aggregation at the ZnO/MZO interfaces; in sharp contrast, the ZnO/MZO MQWs in the MQWs/GaN show a well-crystallized structure with epitaxial relationships among GaN, MZO, and ZnO. Notably, Mg is observed to diffuse into the ZnO well layers. The structure-optical property relationship of these two LDs is further discussed.

Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.

PubMed

Fang, Xuan; Wei, Zhipeng; Yang, Yahui; Chen, Rui; Li, Yongfeng; Tang, Jilong; Fang, Dan; Jia, Huimin; Wang, Dengkui; Fan, Jie; Ma, Xiaohui; Yao, Bin; Wang, Xiaohua

2016-01-27

We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.

Overall water splitting on (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution photocatalyst: relationship between physical properties and photocatalytic activity.

PubMed

Maeda, Kazuhiko; Teramura, Kentaro; Takata, Tsuyoshi; Hara, Michikazu; Saito, Nobuo; Toda, Kenji; Inoue, Yasunobu; Kobayashi, Hisayoshi; Domen, Kazunari

2005-11-03

The physical and photocatalytic properties of a novel solid solution between GaN and ZnO, (Ga(1-x)Zn(x))(N(1-x)O(x)), are investigated. Nitridation of a mixture of Ga(2)O(3) and ZnO at 1123 K for 5-30 h under NH(3) flow results in the formation of a (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution with x = 0.05-0.22. With increasing nitridation time, the zinc and oxygen concentrations decrease due to reduction of ZnO and volatilization of zinc, and the crystallinity and band gap energy of the product increase. The highest activity for overall water splitting is obtained for (Ga(1-x)Zn(x))(N(1-x)O(x)) with x = 0.12 after nitridation for 15 h. The crystallinity of the catalyst is also found to increase with increasing the ratio of ZnO to Ga(2)O(3) in the starting material, resulting in an increase in activity.

Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Ko, Rong-Ming; Wang, Shui-Jinn; Chen, Ching-Yi; Wu, Cheng-Han; Lin, Yan-Ru; Lo, Hsin-Ming

2017-04-01

The hydrothermal growth (HTG) of crystalline n-ZnO films on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO film on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ϕ-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO film crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.

Inducing tunable host luminescence in Zn2GeO4 tetrahedral materials via doping Cr3+

NASA Astrophysics Data System (ADS)

Bai, Qiongyu; Li, Panlai; Wang, Zhijun; Xu, Shuchao; Li, Ting; Yang, Zhiping; Xu, Zheng

2018-06-01

Zn2GeO4 consisting of tetrahedron, and it is a self-luminescent material due to the presence of the native defects and shows a bluish white emission excited by ultraviolet. Although Cr3+ doped in a tetrahedron generally cannot show luminescence, in this research, new defects are formed as Cr3+ doped in Zn2GeO4, hence a green emission band can be obtained. Meanwhile, the intensity of host emission is also decreased. Therefore, Zn2GeO4:Cr3+ are synthesized using a high-temperature solid-phase method. Thermoluminescence (TL) and luminescence decay curves are used to investigate the variation of native defects. The emission colour can be tuned from bluish white to green when Cr3+ doped in Zn2GeO4. This result has guidance for controlling the native emission of self-luminescent material.

Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

NASA Astrophysics Data System (ADS)

Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

2016-10-01

ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

Defects in N/Ge coimplanted GaN studied by positron annihilation

NASA Astrophysics Data System (ADS)

Nakano, Yoshitaka; Kachi, Tetsu

2002-01-01

We have applied positron annihilation spectroscopy to study the depth distributions and species of defects in N-, Ge-, and N/Ge-implanted GaN at dosages of 1×1015 cm-2. For all the implanted samples, Ga vacancies introduced by ion-implantation are found to diffuse into much deeper regions of the GaN layers during the implantation and to change into some other vacancy-type defects by the annealing at 1300 °C. In particular, markedly different defects turn out to be newly created in the electrically activated regions for both the Ge- and N/Ge-implanted samples after annealing, indicating that these new defects are probably associated with the presence of the implanted Ge dopant atoms.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Han, Xiaowei; Wang, Li; Li, Shufeng; Gao, Dongwen; Pan, Yong

2018-01-01

ZnO has attracted much attention because of its high-energy gap and exciton binding energy at room temperature. Compared to ZnO thin films, ZnGaO thin films are more resistive to oxidation and have smaller deformation of lattice. In this study, the high purity ZnSe and Ga2O3 powders were weighted at a molar ratio of 18:1. Se was oxidized to Se2O3 and separated from the mixture powders by using conventional solid state reaction method in air, and the ZnGaO ceramic target was prepared. We fabricated the ZnGaO films on silica glass by pulsed laser deposition (PLD) method under different oxygen pressure at room temperature. The as-grown films were tested by X-ray diffraction and atomic force microscope (AFM) to diagnose the crystal structure and surface morphology. Moreover, we obtained the optical transmittance of ZnGaO film and found that the electrical conductivity capacity varied with the increase of oxygen pressure.

Efficient optical activation of Eu3+ ions doped in ZnGa2O4 thin films: Correlation between crystalline phase and photoluminescence

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Shinojima, Hiroyuki

2018-06-01

The physicochemical properties of Eu-doped zinc gallate (ZnGaxO1+1.5x:Eu) (1 < x < 6) thin films were investigated by means of photoluminescence (PL) triggered by band-to-band transitions of the host crystal at λ = 325 nm. Close correspondence between PL spectra and crystalline phases was verified by performing combinatorial measurements over four-inch substrates on which there was a spread of Ga/Zn composition ratios. The phase formation kinetics for deposition with H2O as an oxygen source gas followed by post annealing were similar to those of hydrothermal synthesis. ZnGa2O4 preferentially formed for a wide range of compositions between 1 < x < 4 and post annealing temperatures between 400 and 800 °C; intense emissions from Eu3+ ions were observed from the films. In contrast, the phase formation kinetics for deposition with O2 gas followed by post annealing were similar to those of solid-state reactions. Vacuum annealing above 500 °C caused preferential losses of Ga atoms and precipitation of Zn2Ga2O5 crystallites at x < 4, whereas ZnGa2O4 formed when a large amount of Ga (x > 6) was initially contained in the as-deposited state. The resulting PL spectra from Zn2Ga2O5 exhibited only a broad emission band from 450 to 700 nm, which was ascribed to defects in the poorly crystallized Zn:Ga = 1:1 phase. When the films deposited with O2 were post annealed in an O2 ambient, Zn atoms were lost, producing β-Ga2O3 as the primary phase accompanied with ZnGa2O4. The resulting Eu3+ emission was very weak, possibly because the Eu3+ ions attached to Ga2O3 domains were not emission-active and/or could not be efficiently excited due to wide bandgap (5 eV). When ZnGa2O4:Eu films were crystallized during deposition at elevated temperatures, weak emissions only from Eu3+ ions were observed. Taken together, these experimental results indicate that Eu3+ ions attached to ZnGa2O4 are highly emission-active; i.e., ZnGa2O4 is a particularly good host crystal with which to secure optical activation of doped Eu3+ ions.

Real structure of (Sb1/3Zn2/3)GaO3(ZnO)3, a member of the homologous series ARO3(ZnO)m with ordered site occupation

NASA Astrophysics Data System (ADS)

Garling, Jennifer; Assenmacher, Wilfried; Schmid, Herbert; Longo, Paolo; Mader, Werner

2018-02-01

The hitherto unknown compound (Sb1/3Zn2/3)GaO3(ZnO)3, a member of the homologous series with general formula ARO3(ZnO)m (A,R = trivalent metal cation), was prepared by solid state methods from the binary oxides in sealed Pt-tubes. The structure of (Sb1/3Zn2/3)GaO3(ZnO)3 has been determined by X-ray diffraction from flux-grown single crystals (R 3 ̅ m , Z = 3, aR = 3.2387(7) Å, cR = 41.78(1) Å. The analysis revealed that (Sb1/3Zn2/3)GaO3(ZnO)m is isostructural with InGaO3(ZnO)m, where In3+ on octahedral sites is replaced by Sb5+ and Zn2+ in a ratio of 1:2, preserving an average charge of 3+. (Sb1/3Zn2/3)GaO3(ZnO)3 was furthermore analyzed by electron diffraction, High Angle Annular Dark Field (HAADF) scanning TEM, and high precision EELS spectroscopic imaging, where a periodic ordering of SbO6 octahedra connected via edge sharing to six ZnO6 octahedra in the octahedral layers in a honeycomb motif is found. Due to the large lateral distance of ca. 1.4 nm between adjacent octahedral layers, electrostatic interaction might hardly dictate Sb and Zn positions in neighbouring layers, and hence is a characteristic of the real structure of (Sb1/3Zn2/3)GaO3(ZnO)3. A structure model of the compound in space group P3112 (Nr. 151) with strictly ordered and discrete Sb and Zn positions is derived by crystallographic transformations as closest approximant for the real structure of (Sb1/3Zn2/3)GaO3(ZnO)3. UV-vis measurements confirm this compound to be a transparent oxide with an optical band gap in the UV region with Eg = 3.15 eV.

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

NASA Astrophysics Data System (ADS)

Karmakar, Supriya; Suarez, Ernesto; Jain, Faquir C.

2011-08-01

This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high- κ gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

NASA Astrophysics Data System (ADS)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

Structure of (Ga2O3)2(ZnO)13 and a unified description of the homologous series (Ga2O3)2(ZnO)(2n + 1).

PubMed

Michiue, Yuichi; Kimizuka, Noboru; Kanke, Yasushi; Mori, Takao

2012-06-01

The structure of (Ga(2)O(3))(2)(ZnO)(13) has been determined by a single-crystal X-ray diffraction technique. In the monoclinic structure of the space group C2/m with cell parameters a = 19.66 (4), b = 3.2487 (5), c = 27.31 (2) Å, and β = 105.9 (1)°, a unit cell is constructed by combining the halves of the unit cell of Ga(2)O(3)(ZnO)(6) and Ga(2)O(3)(ZnO)(7) in the homologous series Ga(2)O(3)(ZnO)(m). The homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) is derived and a unified description for structures in the series is presented using the (3+1)-dimensional superspace formalism. The phases are treated as compositely modulated structures consisting of two subsystems. One is constructed by metal ions and another is by O ions. In the (3 + 1)-dimensional model, displacive modulations of ions are described by the asymmetric zigzag function with large amplitudes, which was replaced by a combination of the sawtooth function in refinements. Similarities and differences between the two homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) and Ga(2)O(3)(ZnO)(m) are clarified in (3 + 1)-dimensional superspace. The validity of the (3 + 1)-dimensional model is confirmed by the refinements of (Ga(2)O(3))(2)(ZnO)(13), while a few complex phenomena in the real structure are taken into account by modifying the model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Negret, Alexandru; Singh, Balraj

The experimental nuclear spectroscopic data for known nuclides of mass number 75 (Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Kr, Rb, Sr) have been evaluated and presented together with Adopted properties for levels and γ rays. New high-spin data are available for {sup 75}Ga, and {sup 75}Rb; and lifetime data for high-spin states in {sup 75}Br and {sup 75}Kr. For ΔJ =1, M1+E2 transitions in two rotational bands in {sup 75}Kr, several B(E2)(W.u.) values are anomalously high, deviating by 2–3 σ values from currently accepted RUL(E2) = 300. In the opinion of the evaluators, there is needmore » to remeasure level lifetimes and multipole mixing ratios in {sup 75}Kr to resolve this serious discrepancy. New precise single-particle transfer cross section data are available for {sup 75}Ga, {sup 75}Ge, {sup 75}As and {sup 75}Se from several different reactions (2009Ka06,2008Sc03); these data give information for occupancy of valence neutron orbitals in the ground states of target nuclides: {sup 76}Ge, {sup 76}Se and {sup 78}Se. No significant new data since the 1999 NDS for A = 75 have been reported for {sup 75}As and {sup 75}Se. No data are yet available for excited states in {sup 75}Co, {sup 75}Ni and {sup 75}Sr. For {sup 75}Fe, only the isotopic identification is made with one observed event. The radioactive decay schemes of {sup 75}Co and {sup 75}Ni are unknown while those for {sup 75}Rb and {sup 75}Sr are incomplete. This work supersedes the data presented in the previous NDS evaluation of A = 75 published by 1999Fa05.« less

Impact of stacking order on the microstructural properties of Cu2ZnGeSe4 thin film absorber layer

NASA Astrophysics Data System (ADS)

Mary, G. Swapna; Chandra, G. Hema; Sunil, M. Anantha; Subbaiah, Y. P. Venkata; Gupta, Mukul; Rao, R. Prasada

2018-05-01

Six possible multiple stacks of Cu-ZnSe-Ge with selenium incorporation at a precursor stage were prepared using electron beam evaporation followed by vacuum selenization at 475 °C for 30 min to investigate the role of stacking order on the growth and properties of Cu2ZnGeSe4 films. The X-ray diffraction measurements affirm the existence of various binary and ternary phases (ZnSe, Cu2Se, GeSe2 and Cu2GeSe3) for all the precursor stacks. These phases are completely diminished after selenization at 475 °C except a minor co-existence of ZnSe (111) phase along with dominant Cu2ZnGeSe4 (112) phase for stack A: (Cu/Se/ZnSe/Se/Ge/Se) × 4. The Raman measurements for selenized multiple stack A, revealed two major A3, A1 modes at 206 cm-1 and 176 cm-1 and one minor E5 mode at 270 cm-1 corresponding to CZGSe phase. The surface morphology and the elemental distribution across the thickness found to vary significantly with the change of stacking order. The selenized multiple stacks A films shows densely packed flake and capsule shaped grains. The selenized stack A found to have a direct energy band gap of 1.60 eV, showing p-type conductivity with a Hall mobility of 22 cm2 (Vs)-1.

ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.

PubMed

Nam, Seung Yong; Choi, Yong Seok; Lee, Ju Ho; Park, Seong Ju; Lee, Jeong Yong; Lee, Dong Seon

2013-01-01

We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.

Ab initio calculations on the initial stages of GaN and ZnO growth on lattice-matched ScAlMgO4 (0001) substrates

NASA Astrophysics Data System (ADS)

Guo, Yao; Wang, Yanfei; Li, Chengbo; Li, Xianchang; Niu, Yongsheng; Hou, Shaogang

2016-12-01

The initial stages of GaN and ZnO epitaxial growth on lattice-matched ScAlMgO4 substrates have been investigated by ab initio calculation. The geometrical parameters and electronic structure of ScAlMgO4 bulk and (0001) surface have been investigated by density-functional first-principles study. The effects of different surface terminations have been examined through surface energy and relaxation calculations. The O-Mg-O termination is more favorable than other terminations by comparing the calculated surface energies. It should be accepted as the appropriate surface structure in subsequent calculation. The initial stages of GaN and ZnO epitaxial growths are discussed based on the adsorption and diffusion of the adatoms on reconstructed ScAlMgO4 (0001) surface. According to theoretical characterizations, N adatom on the surface is more stable than Ga. O adatom is more favorable than Zn. These observations lead to the formation of GaN and ZnO epilayer and explain experimentally-confirmed in-plane alignment mechanisms of GaN and ZnO on ScAlMgO4 substrates. Furthermore, the polarity of GaN and ZnO surfaces on ScAlMgO4 (0001) at the initial growth stage have been explored by ab initio calculation. Theoretical studies indicate that the predominant growths of Ga-polar GaN and Zn-polar ZnO are determined by the initial growth stage.

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.

PubMed

Zhang, Lichun; Li, Qingshan; Shang, Liang; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2013-07-15

n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

[Disposal of radioactive contaminated waste from Ga-68-PET - calculation of a clearance level for Ge-68].

PubMed

Solle, Alexander; Wanke, Carsten; Geworski, Lilli

2017-03-01

Ga-68-labeled radiotracers, particularly used for the detection of neuroendocrine tumors by means of Ga-68-DOTA-TATE or -DOTA-TOC or for the diagnosis of prostate cancer by means of Ga-68-labeled antigens (Ga 68-PSMA), become increasingly important. In addition to the high sensitivity and specificity of these radiopharmaceuticals, the short-lived radionuclide Ga-68 offers almost ideal nuclear characteristics for use in PET. Ga-68 is obtained from a germanium-gallium-generator system, so that the availability of Ga-68-labeled radiotracers is independent of an on-site-cyclotron regardless of the short half-life of Ga-68 of about 68minutes. Regarding the disposal of the radioactively contaminated waste from the preparation of the radiopharmaceutical, the eluted Ga-68 has to be considered to be additionally contaminated with its parent nuclide Ge-68. Due to this production-related impurity in combination with the short half-life of Ga-68, the radioactive waste has to be considered to be contaminated with Ge-68 and Ga-68 in radioactive equilibrium (hereafter referred to as Ge-68+). As there are no clearance levels for Ge-68+ given in the German Radiation Protection Ordinance, this work presents a method to calculate the missing value basing on a recommendation of the German Radiation Protection Commission in combination with simple geometric models of practical radiation protection. Regarding the relevant exposure scenarios, a limit value for the unrestricted clearance of Ge-68+ of 0.4 Bq/g was determined. Copyright © 2016. Published by Elsevier GmbH.

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE PAGES

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R; ...

2017-08-12

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Native Defect Related Optical Properties of ZnGeP2

NASA Technical Reports Server (NTRS)

Dietz, N.; Tsveybak, I.; Ruderman, W.; Wood, G.; Bachmann, K. J.

1994-01-01

We present photoluminescence, photoconductivity, and optical absorption spectra for ZnGeP2 crystals grown from the melt by gradient freezing and from the vapor phase by high pressure physical vapor transport (HPVT). A model of donor and acceptor related subbands in the energy gap of ZnGeP2 is introduced that explains the experimental results. The emission with peak position at 1.2 eV is attributed to residual disorder on the cation sublattice. The lower absorption upon annealing is interpreted in terms of both the reduction of the disorder on the cation sublattice and changes in the Fermi level position. The n-type conductivity of ZnGeP2 Crystals grown under Ge-deficient conditions by the HPVT is related to the presence of additional donor states.

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

NASA Astrophysics Data System (ADS)

Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

2012-04-01

The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the ZnGa acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the ZnGa acceptors and free electrons were also estimated from the photoluminescence measurements.

EOL performance comparison of GaAs/Ge and Si BSF/R solar arrays

NASA Technical Reports Server (NTRS)

Woike, Thomas J.

1993-01-01

EOL power estimates for solar array designs are significantly influenced by the predicted degradation due to charged particle radiation. New radiation-induced power degradation data for GaAs/Ge solar arrays applicable to missions ranging from low earth orbit (LEO) to geosynchronous earth orbit (GEO) and compares these results to silicon BSF/R arrays. These results are based on recently published radiation damage coefficients for GaAs/Ge cells. The power density ratio (GaAs/Ge to Si BSF/R) was found to be as high as 1.83 for the proton-dominated worst-case altitude of 7408 km medium Earth orbit (MEO). Based on the EOL GaAs/Ge solar array power density results for MEO, missions which were previously considered infeasible may be reviewed based on these more favorable results. The additional life afforded by using GaAs/Ge cells is an important factor in system-level trade studies when selecting a solar cell technology for a mission and needs to be considered. The data presented supports this decision since the selected orbits have characteristics similar to most orbits of interest.

Microencapsulation of stearidonic acid soybean oil in Maillard reaction-modified complex coacervates.

PubMed

Ifeduba, Ebenezer A; Akoh, Casimir C

2016-05-15

The antioxidant capacity of Maillard reaction (MR)-modified gelatin (GE)-gum arabic (GA) coacervates was optimized to produce microcapsules with superior oxidative stability compared to the unmodified control. MR was used to crosslink GE and GA, with or without maltodextrin (MD), to produce anti-oxidative Maillard reaction products (MRP) which was used to encapsulate stearidonic acid soybean oil (SDASO) by complex coacervation. Biopolymer blends (GE-GA [1:1, w/w] or GE-GA-MD [2:2:1, w/w/w]) were crosslinked by dry-heating at 80°C for 4, 8, or 16h. Relationships between the extent of browning, Trolox equivalent antioxidant capacity (TEAC), and the total oxidation (TOTOX) of encapsulated SDASO were fitted to quadratic models. The [GE-GA-MD] blends exhibited higher browning rates and TEAC values than corresponding [GE-GA] blends. Depending on the type of biopolymer blend and dry-heating time, TOTOX values of SDASO in MRP-derived microcapsules were 29-87% lower than that of the non-crosslinked control after 30 days of storage. Copyright © 2015 Elsevier Ltd. All rights reserved.

The effects of starting materials in the synthesis of (Ga(1-x)Znx)(N(1-x)O(x)) solid solution on its photocatalytic activity for overall water splitting under visible light.

PubMed

Hisatomi, Takashi; Maeda, Kazuhiko; Lu, Daling; Domen, Kazunari

2009-01-01

The influence of starting materials on the physicochemical and photocatalytic properties of (Ga(1-x)Zn(x))(N(1-x)O(x)) were investigated in an attempt to optimize the preparation conditions. The catalyst was successfully prepared by nitriding a starting mixture of ZnO and Ga2O3. A mixture of metallic zinc and GaN, however, did not afford the desired compound. The crystallinity, surface area, composition, and absorption characteristics of the resultant (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution are found to be dependent on the morphology of ZnO but largely insensitive to the choice of Ga2O3 polymorph. The use of coarser-grained ZnO results in a coarser-grained catalyst with elevated zinc and oxygen content and reduced uniformity in composition and crystallinity. The results demonstrate the importance of selecting appropriate ZnO and Ga2O3 starting materials for maximizing the photocatalytic activity of (Ga(1-x)Zn(x))(N(1-x)O(x)) for overall water splitting under visible light.

The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

NASA Astrophysics Data System (ADS)

Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

2014-04-01

The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10-3 Ω cm for undoped ZnO to 2.05 × 10-3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka

The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering modelmore » indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.« less

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound

NASA Astrophysics Data System (ADS)

Shcherba, I. D.; Kostyk, L. V.; Noga, H.; Bekenov, L. V.; Uskokovich, D.; Jatsyk, B. M.

2017-09-01

The band structure of Ca3Ga2Ge3О12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

PubMed

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Fabrication of GaN doped ZnO nanocrystallines by laser ablation.

PubMed

Gopalakrishnan, N; Shin, B C; Bhuvana, K P; Elanchezhiyan, J; Balasubramanian, T

2008-08-01

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires

DTIC Science & Technology

2008-11-01

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires Lena Mazeina,* Yoosuf N. Picard, and Sharka M. Prokes Electronics...Manuscript ReceiVed NoVember 6, 2008 ABSTRACT: Novel hierarchical ZnO- Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3 ...nanobrushes (NBs) with Ga2O3 as the core and ZnO as the branches self-assembling symmetrically in six equiangular directions around the core

Solvothermal synthesis of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanophosphor in water/diethylene glycol system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeshita, Satoru; Honda, Joji; Isobe, Tetsuhiko, E-mail: isobe@applc.keio.ac.jp

2012-05-15

The influence of aging of the suspension containing the amorphous precusors on structural, compositional and photoluminescent properties is studied to understand the mechanism on the formation of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanoparticles during the solvothermal reaction in the water/diethylene glycol mixed solvent. Aging at 200 Degree-Sign C for 20 min forms the crystalline Zn{sub 2}GeO{sub 4} nanorods and then they grow up to {approx} 50 nm in mean length after aging for 240 min. Their interplanar spacing of (410) increases with increasing the aging time. The photoluminescence intensity corresponding to the d-d transition of Mn{sup 2+} increases with increasing themore » aging time up to 120 min, and then decreases after aging for 240 min. The photoluminescence lifetime decreases with increasing the aging time, indicating the locally concentrated Mn{sup 2+} ions. These results reveal that Mn{sup 2+} ions gradually replace Zn{sup 2+} ions near surface through repeating dissolusion and precipitation processes during prolonged aging after the complete crystallization of Zn{sub 2}GeO{sub 4}. - Graphical abstract: TEM images of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanoparticles aged at 200 Degree-Sign C for different aging times in the mixed solvent of water and diethylene glycol. Highlights: Black-Right-Pointing-Pointer Mechanism on formation of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanophosphor under solvothermal condition. Black-Right-Pointing-Pointer Zn{sub 2}GeO{sub 4} nanorods crystallize via amorphous precursors. Black-Right-Pointing-Pointer Gradual substitution of Mn{sup 2+} during prolonged aging. Black-Right-Pointing-Pointer Such an inhomogeneous Mn{sup 2+} doping process results in concentration quenching.« less

Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism

NASA Astrophysics Data System (ADS)

Sky, T. N.; Johansen, K. M.; Riise, H. N.; Svensson, B. G.; Vines, L.

2018-02-01

Isochronal and isothermal diffusion experiments of gallium (Ga) in zinc oxide (ZnO) have been performed in the temperature range of 900-1050 °C. The samples used consisted of a sputter-deposited and highly Ga-doped ZnO film at the surface of a single-crystal bulk material. We use a novel reaction diffusion (RD) approach to demonstrate that the diffusion behavior of Ga in ZnO is consistent with zinc vacancy (VZn) mediation via the formation and dissociation of GaZnVZn complexes. In the RD modeling, experimental diffusion data are fitted utilizing recent density-functional-theory estimates of the VZn formation energy and the binding energy of GaZnVZn. From the RD modeling, a migration energy of 2.3 eV is deduced for GaZnVZn, and a total/effective activation energy of 3.0 eV is obtained for the Ga diffusion. Furthermore, and for comparison, employing the so-called Fair model, a total/effective activation energy of 2.7 eV is obtained for the Ga diffusion, reasonably close to the total value extracted from the RD-modeling.

A sea cucumber-like BiOBr nanosheet/Zn2GeO4 nanorod heterostructure for enhanced visible light driven photocatalytic activity

NASA Astrophysics Data System (ADS)

Zhang, Zhiping; Ge, Xin; Zhang, Xueyu; Duan, Lianfeng; Li, Xuesong; Yang, Yue; Lü, Wei

2018-01-01

In present work, a two-step hydrothermal/solvothermal method was developed to fabricate sea cucumber-like p-n heterojunctions of p-BiOBr/n-Zn2GeO4. The BiOBr nanosheets were grafted onto the surface of Zn2GeO4 nanorods. BiOBr/Zn2GeO4 nanocomposites exhibit remarkable photocatalytic activity under visible-light irradiation, and photocatalytic activity was studied in the catalytic test of rhodamine B decolorization. The mechanism for improved photocatalytic activity is interpreted in terms of the formation of type II band alignment between BiOBr and Zn2GeO4, which is confirmed by UV-vis diffuse absorption and VB-XPS spectra. BiOBr nanosheet as an admirable electron transport medium provide desirable specific surface area for the nanocomposite and a suitable band gap for heterojunction structure. Furthermore, scavenger experiments confirmed that h+ and {{{{O}}}2}\\cdot - were the main oxygen active species in the decolorization process.

Zn-dopant dependent defect evolution in GaN nanowires

NASA Astrophysics Data System (ADS)

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-01

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires. Electronic supplementary information (ESI) available: HRTEM image of undoped GaN nanowires and first-principles calculations of Zn doped WZ-GaN. See DOI: 10.1039/c5nr04771d

Codoping characteristics of Zn with Mg in GaN

NASA Astrophysics Data System (ADS)

Kim, K. S.; Han, M. S.; Yang, G. M.; Youn, C. J.; Lee, H. J.; Cho, H. K.; Lee, J. Y.

2000-08-01

The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5×1017cm-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10-4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10-3 Ω cm2).

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

PubMed

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures

NASA Astrophysics Data System (ADS)

Haight, R.; Silberman, J. A.

1990-10-01

Using angle-resolved picosecond laser photoemission we have investigated both occupied and transiently excited empty states at the surface of Ge grown epitaxially on GaAs(110). We observe a normally unoccupied, Ge layer derived state whose separation from the valence-band maximum of the system is 700±50 meV at six monolayers Ge coverage. The evolution of the electronic structure is followed as a function of coverage and correlated with low-energy electron diffraction. The time dependence of the transiently occupied Ge signal is compared with that of the clean GaAs(110) surface and shows that electrons are prevented from diffusing into the GaAs bulk by the conduction-band offset of 330±40 meV.

Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe

NASA Technical Reports Server (NTRS)

Draper, S. L.; Vandersande, J. W.; Wood, C.; Masters, R.; Raag, V.

1989-01-01

The purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.

Effect of Si, Mg, and Mg Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cho, H. K.; Lee, J. Y.; Kim, K. S.; Yang, G. M.

2001-12-01

We have studied the structural properties of undoped, Si-doped, Mg-doped, and Mg-Zn codoped GaN using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. When compared with undoped GaN, the dislocation density at the surface of the GaN layer decreases with Si doping and increases with Mg doping. In addition, we observed a reduction of dislocation density by codoping with Zn atoms in the Mg-doped GaN layer. The full width at half maximum of HRXRD shows that Si doping and Mg-Zn codoping improve the structural quality of the GaN layer as compared with undoped and Mg-doped GaN, respectively.

The Assessment for Sensitivity of a NO2 Gas Sensor with ZnGa2O4/ZnO Core-Shell Nanowires—a Novel Approach

PubMed Central

Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Hsu, Cheng-Liang; Hsueh, Ting Jen; Shieh, Tien-Yu

2010-01-01

The application of novel core-shell nanowires composed of ZnGa2O4/ZnO to improve the sensitivity of NO2 gas sensors is demonstrated in this study. The growth of ZnGa2O4/ZnO core-shell nanowires is performed by reactive evaporation on patterned ZnO:Ga/SiO2/Si templates at 600 °C. This is to form the homogeneous structure of the sensors investigated in this report to assess their sensitivity in terms of NO2 detection. These novel NO2 gas sensors were evaluated at working temperatures of 25 °C and at 250 °C, respectively. The result reveals the ZnGa2O4/ZnO core-shell nanowires present a good linear relationship (R2 > 0.99) between sensitivity and NO2 concentration at both working temperatures. These core-shell nanowire sensors also possess the highest response (<90 s) and recovery (<120 s) values with greater repeatability seen for NO2 sensors at room temperature, unlike traditional sensors that only work effectively at much higher temperatures. The data in this study indicates the newly-developed ZnGa2O4/ZnO core-shell nanowire based sensors are highly promising for industrial applications. PMID:22319286

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

PubMed

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys

NASA Astrophysics Data System (ADS)

Maltsev, Dmitry S.; Volkovich, Vladimir A.; Yamshchikov, Leonid F.; Chukin, Andrey V.

2016-09-01

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys were studied. Temperature dependences of gadolinium activity in the studied alloys were determined at 573-1073 K employing the EMF method. Solubility of gadolinium in the Ga-Sn and Ga-Zn alloys was measured at 462-1073 K using IMCs sedimentation method. Activity coefficients as well as partial and excess thermodynamic functions of gadolinium in the studied alloys were calculated on the basis of the obtained experimental data.

Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

NASA Astrophysics Data System (ADS)

Kitatani, T.; Okamoto, K.; Uchida, K.; Tanaka, S.

2017-12-01

We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

Effect of varying Ga content in ZnO:GaN solid solution synthesized by solution combustion technique for photocatalytic applications

NASA Astrophysics Data System (ADS)

Menon, Sumithra Sivadas; Janani, R.; Baskar, K.; Gupta, Bhavana; Singh, Shubra

2017-05-01

ZnO:GaN (oxy)nitride solid solution has been established as the most efficient non-oxide photocatalyst for water splitting under visible irradiation with one step photoexcitation and also boasts a band gap tunability from 2.8 eV to 2.5 eV[1]. The solid solution of GaN in ZnO is formed by the intersubstitution of few of Zn/O ions by Ga/N ions, and this results in the introduction of new defect levels above the valence band which narrows the effective band gap enabling activity under visible region of spectra. In this work, we report the synthesis of ZnO:GaN solid solution by a solution combustion technique where metal nitrates and urea are used as precursors. The Zn/Ga ratio was varied from 16 to 1 in the precursors. The as synthesized samples were characterized as phase pure by X-ray diffraction, where the wurtzite structure was retained up to Zn/Ga ratio of 5. The Diffuse reflectance spectroscopy studies revealed that as the Ga content in the solid solution increases there is a reduction in band gap, from 2.9 eV to 2.4 eV. The reduced band gap of the samples facilitates its photocatalytic activity under visible region of the spectra as evaluated by photoelectrochemical measurements.

Long-term evaluation of TiO2-based 68Ge/68Ga generators and optimized automation of [68Ga]DOTATOC radiosynthesis.

PubMed

Lin, Mai; Ranganathan, David; Mori, Tetsuya; Hagooly, Aviv; Rossin, Raffaella; Welch, Michael J; Lapi, Suzanne E

2012-10-01

Interest in using (68)Ga is rapidly increasing for clinical PET applications due to its favorable imaging characteristics and increased accessibility. The focus of this study was to provide our long-term evaluations of the two TiO(2)-based (68)Ge/(68)Ga generators and develop an optimized automation strategy to synthesize [(68)Ga]DOTATOC by using HEPES as a buffer system. This data will be useful in standardizing the evaluation of (68)Ge/(68)Ga generators and automation strategies to comply with regulatory issues for clinical use. Copyright © 2012 Elsevier Ltd. All rights reserved.

Synthesis and characterization of novel electronic materials with volatile species

NASA Astrophysics Data System (ADS)

Zhizhong, Tang

In this thesis, two novel electronic materials, including semiconductor ZnGeAs2 and dielectric Ba(Zn1/3Ta 2/3)O3 were studied. The growth, characterization and application of ZnGeAs2 in photovoltaics were explored. The structure, optic and electric properties of expitaxial Ba(Zn1/3Ta2/3)O 3 films were also reported. ZnGeAs2 films were grown by pulsed laser deposition from the home-made target. The composition study showed that the Ge element incorporation rate remained constant, while the Zn and As incorporation rates decrease monotonically at elevated growth temperatures. Prototype of photovoltaic cell made with heterojunction p-ZnGeAs2/n-CdS/n+-SnO2 diode showed 0.14 Volt open circuit voltage under ˜100 mW/cm2 lab lamp illumination (1 sun) and 0.45 Volt Voc under 100 mW/cm 2 green LED illumination. Thermal decomposition studied of bulk ZnGeAs2 showed that the Zn and As dissociation rate from ZnGeAs2 approaches one monolayer per second at around 425 °C with activation energy of 1.08 eV. Thermodynamic and kinetic analysis showed that synthesis of ZnGeAs2 thin film is a metastable process involving a competition between the forward reaction which depends on the arrival of reactants at the growth surface, and the reverse kinetically-limited decomposition reaction. Ba(Zn1/3Ta2/3)O3 (100) dielectric thin films grown on MgO (100) substrates by pulsed laser deposition. The thin film structure, optic and electric properties were systematically characterized. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. The Ba(Zn1/3Ta2/3)O3 films have an indirect optical band gap of ˜3.0 eV and a refractive index of 1.91 in the visible spectral range, with dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz. The Ba(Zn1/3Ta 2/3)O3 films exhibit a small thermally-activated Ohmic leakage current at high fields (<250 KV/cm) and high temperatures (<200 °C) with an activation energy of 0.85 eV. Ba(Zn1/3Ta2/3)O3 dielectric ceramics powder was used to synthesize Metallo-Dielectric Electromagnetic Band Gap structures by ceramic injection molding. Capacitive series and shunt defects were introduced in Metallo-Dielectric Electromagnetic Band Gap structures to generate sub-wavelength resonances. The frequency responses of both defect-free and defect-laden EBG structures were characterized at microwave frequencies and were found to agree with the results of electromagnetic simulations using the commercial HFSS modeling package.

Reduction of 68Ge activity containing liquid waste from 68Ga PET chemistry in nuclear medicine and radiopharmacy by solidification.

PubMed

de Blois, Erik; Chan, Ho Sze; Roy, Kamalika; Krenning, Eric P; Breeman, Wouter A P

PET with 68 Ga from the TiO 2 - or SnO 2 - based 68 Ge/ 68 Ga generators is of increasing interest for PET imaging in nuclear medicine. In general, radionuclidic purity ( 68 Ge vs. 68 Ga activity) of the eluate of these generators varies between 0.01 and 0.001%. Liquid waste containing low amounts of 68 Ge activity is produced by eluting the 68 Ge/ 68 Ga generators and residues from PET chemistry. Since clearance level of 68 Ge activity in waste may not exceed 10 Bq/g, as stated by European Directive 96/29/EURATOM, our purpose was to reduce 68 Ge activity in solution from >10 kBq/g to <10 Bq/g; which implies the solution can be discarded as regular waste. Most efficient method to reduce the 68 Ge activity is by sorption of TiO 2 or Fe 2 O 3 and subsequent centrifugation. The required 10 Bq per mL level of 68 Ge activity in waste was reached by Fe 2 O 3 logarithmically, whereas with TiO 2 asymptotically. The procedure with Fe 2 O 3 eliminates ≥90% of the 68 Ge activity per treatment. Eventually, to simplify the processing a recirculation system was used to investigate 68 Ge activity sorption on TiO 2 , Fe 2 O 3 or Zeolite. Zeolite was introduced for its high sorption at low pH, therefore 68 Ge activity containing waste could directly be used without further interventions. 68 Ge activity containing liquid waste at different HCl concentrations (0.05-1.0 M HCl), was recirculated at 1 mL/min. With Zeolite in the recirculation system, 68 Ge activity showed highest sorption.

Short and medium range structures of 80GeSe2–20Ga2Se3 chalcogenide glasses

NASA Astrophysics Data System (ADS)

Petracovschi, Elena; Calvez, Laurent; Cormier, Laurent; Le Coq, David; Du, Jincheng

2018-05-01

The short and medium range structures of 80GeSe2–20Ga2Se3 (or Ge23.5Ga11.8Se64.7) chalcogenide glasses have been studied by combining ab initio molecular dynamics (AIMD) simulations and experimental neutron diffraction studies. The structure factor and total correlation function were calculated from glass structures generated from AIMD simulations and compared with neutron diffraction experiments showing reasonable agreement. The atomic structures of ternary chalcogenide glasses were analyzed in detail, and it was found that gallium atoms are four-fold coordinated by selenium (Se) and form [GaSe4] tetrahedra. Germanium atoms on average also have four-fold coordination, among which Se is 3.5 with the remaining being Ge–Ge homo-nuclear bonds. Ga and Ge tetrahedra link together mainly through corner-sharing and some edge-sharing of Se. No homo-nuclear bonds were observed among Ga atoms or between Ge and Ga. In addition, Se–Se homo-nuclear bonds and Se chains with various lengths were observed. A small fraction of Se atom triclusters that bond to three cations of Ge and Ga were also observed, confirming earlier proposals from 77Se solid state nuclear magnetic resonance studies. Furthermore, the electronic structures of ternary chalcogenide glasses were studied in terms of atomic charge and electronic density of states in order to gain insights into the chemical bonding and electronic properties, as well as to provide an explanation of the observed atomic structures in these ternary chalcogenide glasses.

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Computational investigation of structural and electronic properties of aqueous interfaces of GaN, ZnO, and a GaN/ZnO alloy.

PubMed

Kharche, Neerav; Hybertsen, Mark S; Muckerman, James T

2014-06-28

The GaN/ZnO alloy functions as a visible-light photocatalyst for splitting water into hydrogen and oxygen. As a first step toward understanding the mechanism and energetics of water-splitting reactions, we investigate the microscopic structure of the aqueous interfaces of the GaN/ZnO alloy and compare them with the aqueous interfaces of pure GaN and ZnO. Specifically, we have studied the (101̄0) surface of GaN and ZnO and the (101̄0) and (12̄10) surfaces of the 1 : 1 GaN/ZnO alloy. The calculations are carried out using first-principles density functional theory based molecular dynamics (DFT-MD). The structure of water within a 3 Å distance from the semiconductor surface is significantly altered by the acid/base chemistry of the aqueous interface. Water adsorption on all surfaces is substantially dissociative such that the surface anions (N or O) act as bases accepting protons from dissociated water molecules while the corresponding hydroxide ions bond with surface cations (Ga or Zn). Additionally, the hard-wall interface presented by the semiconductor imparts ripples in the density of water. Beyond a 3 Å distance from the semiconductor surface, water exhibits a bulk-like hydrogen bond network and oxygen-oxygen radial distribution function. Taken together, these characteristics represent the resting (or "dark") state of the catalytic interface. The electronic structure analysis of the aqueous GaN/ZnO interface suggests that the photogenerated holes may get trapped on interface species other than the adsorbed OH(-) ions. This suggests additional dynamical steps in the water oxidation process.

Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)1-x(ZnO)x solid solution.

PubMed

Wu, Aimin; Li, Jing; Liu, Baodan; Yang, Wenjin; Jiang, Yanan; Liu, Lusheng; Zhang, Xinglai; Xiong, Changmin; Jiang, Xin

2017-02-21

(GaN) 1-x (ZnO) x solid solution has attracted extensive attention due to its feasible band-gap tunability and excellent photocatalytic performance in overall water splitting. However, its potential application in the photodegradation of organic pollutants and environmental processing has rarely been reported. In this study, we developed a rapid synthesis process to fabricate porous (GaN) 1-x (ZnO) x solid solution with a tunable band gap in the range of 2.38-2.76 eV for phenol photodegradation. Under visible-light irradiation, (GaN) 0.75 (ZnO) 0.25 solid solution achieved the highest photocatalytic performance compared to other (GaN) 1-x (ZnO) x solid solutions with x = 0.45, 0.65 and 0.85 due to its higher redox capability and lower lattice deformation. Slight Ag decoration with a content of 1 wt% on the surface of the (GaN) 0.75 (ZnO) 0.25 solid solution leads to a significant enhancement in phenol degradation, with a reaction rate eight times faster than that of pristine (GaN) 0.75 (ZnO) 0.25 . Interestingly, phenol in aqueous solution (10 mg L -1 ) can also be completely degraded within 60 min, even under the direct exposure of sunlight irradiation. The photocurrent response indicates that the enhanced photocatalytic activity of (GaN) 0.75 (ZnO) 0.25 /Ag is directly induced by the improved transfer efficiency of the photogenerated electrons at the interface. The excellent phenol degradation performance of (GaN) 1-x (ZnO) x /Ag further broadens their promising photocatalytic utilization in environmental processing, besides in overall water splitting for hydrogen production.

GaAs/Ge solar panels for the SAMPEX program

NASA Technical Reports Server (NTRS)

Dobson, Rodney; Kukulka, Jerry; Dakermanji, George; Roufberg, Lew; Ahmad, Anisa; Lyons, John

1992-01-01

GaAs based solar cells have been developed for spacecraft use for several years. However, acceptance and application of these cells for spacecraft missions has been slow because of their high cost and concerns about their integration onto solar panels. Spectrolab has now completed fabrication of solar panels with GaAs/Ge solar cells for a second space program. This paper will focus on the design, fabrication and test of GaAs/Ge solar panels for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) Program.

Phosphor-free, white-light LED under alternating-current operation.

PubMed

Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

2014-11-15

A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

2002-01-01

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Atypical self-activation of Ga dopant for Ge nanowire devices.

PubMed

Zeiner, Clemens; Lugstein, Alois; Burchhart, Thomas; Pongratz, Peter; Connell, Justin G; Lauhon, Lincoln J; Bertagnolli, Emmerich

2011-08-10

In this Letter we report the atypical self-activation of gallium (Ga) implanted by focused ion beam (FIB) into germanium nanowires (Ge-NWs). By FIB implantation of 30 keV Ga(+) ions at room temperature, the Ge-NW conductivity increases up to 3 orders of magnitude with increasing ion fluence. Cu(3)Ge heterostructures were formed by diffusion to ensure well-defined contacts to the NW and enable two point I/V measurements. Additional four point measurements prove that the conductivity enhancement emerges from the modification of the wires themselves and not from contact property modifications. The Ga distribution in the implanted Ge-NWs was measured using atom probe tomography. For high ion fluences, and beginning amorphization of the NWs, the conductivity decreases exponentially. Temperature dependent conductivity measurements show strong evidence for an in situ doping of the Ge-NWs without any further annealing. Finally the feasibility of improving the device performance of top-gated Ge-NW MOSFETs by FIB implantation was shown.

Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence

NASA Astrophysics Data System (ADS)

Fan, Ranran; Lu, Fei; Li, Kaikai; Liu, Kaijing

2018-06-01

This paper investigated the controllable growth of Ge nanocrystal (nc-Ge) in (Ge, Er) co-doped ZnO film, and the relationship between the size of nc-Ge and the enhancement of Er3+ related 1.54 μm photoluminescence (PL). It was found that nc-Ge with size of ∼5 nm was formed by annealing treatment at 600 °C. The intensity of 1.54 μm was significantly enhanced due to the existence of nc-Ge and showed an obvious dependence on nanocrystal size. The size of nc-Ge increased with the increase of the annealing temperature, and the nanocrystal with size of ∼5 nm made the most obvious contribution to PL enhancement. Prolonging annealing time could improve the crystalline structure of ZnO matrix but had no effect on PL intensity. The experimental results showed that the PL enhancement was mainly achieved by transferring the energy to Er through the resonance absorption of nc-Ge.

Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

NASA Astrophysics Data System (ADS)

Chen, Charlene; Abe, Katsumi; Fung, Tze-Ching; Kumomi, Hideya; Kanicki, Jerzy

2009-03-01

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (ΔVT) within acceptable operating error range.

In-situ characterization of the optical and electronic properties in GeTe and GaSb thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velea, A.; Popescu, M.; Galca, A. C., E-mail: ac-galca@infim.ro

2015-10-07

GeTe and GaSb thin films obtained by pulsed laser deposition were investigated by spectroscopic ellipsometry at controlled temperatures. The GeTe films were fully amorphous, while the GaSb films were partially crystalized in the as-deposited state. The Tauc-Lorentz model was employed to fit the experimental data. From the temperature study of the optical constants, it was observed the crystallization in the 150–160 °C range of GeTe amorphous films and between 230 and 240 °C of GaSb amorphous phase. A second transition in the resonance energy and the broadening parameter of the Lorentz oscillator was observed due to the crystallization of Sb after 250 °C.more » The temperatures of 85 °C and 130 °C are noticed as the start of the relaxation of the amorphous GeTe phase and as-deposited GaSb. The peaks of the imaginary part of the dielectric function red shifted after the phase change, while the variation with temperature of the crystalline phase follows the Varshni law. The electron-phonon coupling constants are 2.88 and 1.64 for c-GeTe and c-GaSb, respectively. An optical contrast up to 60% was obtained for GeTe films and a maximum value of 7.5% is revealed in the case GaSb, which is altered by the partial crystallinity of the as-deposited films.« less

Luminescence Characteristics of ZnGa2O4 Thick Film Doped with Mn2+ and Cr3+ at Various Sintering Temperatures

NASA Astrophysics Data System (ADS)

Cha, Jae Hyeok; Kim, Kyung Hwan; Park, Yong Seo; Kwon, Sang Jik; Choi, Hyung Wook

2007-10-01

ZnGa2O4 phosphor separately doped with Mn2+ and Cr3+ was synthesized by solid-state reaction, and thick films were deposited by screen printing. The X-ray diffraction (XRD) patterns of ZnGa2O4 phosphor thick films show a (311) main peak and a spinal phase. Uniform distribution and filled morphology of the doped ZnGa2O4 phosphor thick films were formed at the sintering temperature of 1100 °C. The CL spectrum of Mn2+-doped ZnGa2O4 shows the main peak of 512 nm green emission with the 4T1→6A1 transition of Mn2+ ions and the CL spectrum of Cr3+-doped ZnGa2O4 shows the main peak of 716 nm red emission with the 2E→4A2 transition of Cr3+ ions.

Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

NASA Astrophysics Data System (ADS)

Zhao, Xiaolong; Wu, Zhenping; Zhi, Yusong; An, Yuehua; Cui, Wei; Li, Linghong; Tang, Weihua

2017-03-01

Highly oriented (\\bar{2} 0 1 ) Ga2-x Zn x O3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)‧ under 254 nm ultraviolet excitation, and the maximum was obtained at x  =  0.8. A metal-semiconductor-metal structured solar-blind photodetector based on Ga2-x Zn x O3 (x  =  0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for β-Ga2-x Zn x O3 (x  =  0.8) photodetector were observed with 254 nm ultraviolet illumination.

Nuclear Data Sheets for A = 80

NASA Astrophysics Data System (ADS)

Singh, Balraj

2005-06-01

Nuclear spectroscopic information for known nuclides of mass number 80 (Cu,Zn,Ga,Ge,As,Se,Br,Kr,Rb,Sr,Y,Zr) with Z = 29 to 40 and N = 51 to 40 have been evaluated and presented together with adopted energies and Jπ of levels in these nuclei. No excited state data are yet available for 80Cu and 80Zn. In 80Sr, four superdeformed bands have been reported. The half-life of fully-ionized 80Y isomer at 228.5 keV has been measured as 6.8 s 5, as compared to 4.8 s 3 for the neutral atom. This evaluation supersedes previous full evaluations of A = 80 published by 1982Si20 and 1975Gr19, a midstream evaluation of A = 80 published in 'up-date mode' by 1992Si19, and an update of 80Y nuclide for ENSDF by J.K. Tuli in August 2003.

High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.

2014-09-26

In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to −190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from −20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperaturesmore » has been studied including EL technique.« less

Study of the physical properties of Ge-S-Ga glassy alloy

NASA Astrophysics Data System (ADS)

Rana, Anjli; Sharma, Raman

2018-05-01

In the present work, we have studied the effect of Ga doping on the physical properties of Ge20S80-xGax glassy alloy. The basic physical parameters which have important role in determining the structure and strength of the material viz. average coordination number, lone-pair electrons, mean bond energy, glass transition temperature, electro negativity, probabilities for bond distribution and cohesive energy have been computed theoretically for Ge-S-Ga glassy alloy. Here, the glass transition temperature and mean bond energy have been investigated using the Tichy-Ticha approach. The cohesive energy has been calculated by using chemical bond approach (CBA) method. It has been found that while average coordination number increases, all the other parameters decrease with the increase in Ga content in Ge-S-Ga system.

Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

NASA Astrophysics Data System (ADS)

Sammak, Amir; Qi, Lin; Nanver, Lis K.

2015-12-01

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

Zn-dopant dependent defect evolution in GaN nanowires.

PubMed

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-21

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.

N2O + CO reaction over single Ga or Ge atom embedded graphene: A DFT study

NASA Astrophysics Data System (ADS)

Esrafili, Mehdi D.; Vessally, Esmail

2018-01-01

The possibility of using a single Ga or Ge atom embedded graphene as an efficient catalyst for the reduction of N2O molecule by CO is examined. We perform density functional theory calculations to calculate adsorption energies as well as analysis of the structural and electronic properties of different species involved in the N2O + CO reaction. The large activation energy for the diffusion of the single Ga or Ge atom on the C vacancy site of graphene shows the high stability of both Ga- and Ge-embedded graphene sheets in the N2O reduction. The activation energy needed for the decomposition of N2O is calculated to be 18.4 and 14.1 kcal/mol over Ga- and Ge-embedded graphene, respectively. The results indicate that the Ge-embedded graphene may serve as an effective catalyst for the N2O reduction. Moreover, the activation energy for the disproportionation of N2O molecules that generates N2 and O2 is relatively high; so, the generation of these side products may be hindered by decreasing the temperature.

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

PubMed Central

Hudait, Mantu K.; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

2014-01-01

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm2/Vs at 290 K and 457 cm2/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications. PMID:25376723

Production status of GaAs/Ge solar cells and panels

NASA Technical Reports Server (NTRS)

Smith, B.; Gillanders, M.; Vijayakumar, P.; Lillington, D.; Yang, H.; Rolph, R.

1991-01-01

GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed. Production GaAs/Ge cells of this type were recently assembled into circuits and bonded to aluminum honeycomb panels to be used as the solar array for the British UOSAT-F program.

Production status of GaAs/Ge solar cells and panels

NASA Astrophysics Data System (ADS)

Smith, B.; Gillanders, M.; Vijayakumar, P.; Lillington, D.; Yang, H.; Rolph, R.

1991-08-01

GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed. Production GaAs/Ge cells of this type were recently assembled into circuits and bonded to aluminum honeycomb panels to be used as the solar array for the British UOSAT-F program.

Synthesis of ternary oxide for efficient photo catalytic conversion of CO2

NASA Astrophysics Data System (ADS)

Wan, Lijuan

2018-01-01

Zn2GeO4 Nan rods were prepared by solution phase route. The morphology and structure of the as-prepared products were characterized by scanning electron microscopy (SEM) and Bruner-Emmett-Teller (BET) surface area measurements. The results revealed that Zn2GeO4 Nan rods with higher surface area have higher photo catalytic activity in photo reduction of CO2 than Zn2GeO4 prepared through solid-state reaction.

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamioka, K.; Oga, T.; Izawa, Y.

2013-12-04

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ∼10{sup 3} Ωcm for un-implanted samples to ∼10{sup −2} Ωcm for as-implanted ones are observed. The resistivity is further decreased to ∼10{sup −3} Ωcm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33more » eV) related to the Ge donor is observed in 1000 °C annealed samples.« less

Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H. F.; Chua, S. J.; Hu, G. X.

2007-10-15

X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate whilemore » a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)« less

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

NASA Astrophysics Data System (ADS)

Pantzas, K.; Rogers, D. J.; Bove, P.; Sandana, V. E.; Teherani, F. H.; El Gmili, Y.; Molinari, M.; Patriarche, G.; Largeau, L.; Mauguin, O.; Suresh, S.; Voss, P. L.; Razeghi, M.; Ougazzaden, A.

2016-02-01

p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.

Simultaneous growth of pure hyperbranched Zn3As2 structures and long Ga2O3 nanowires.

PubMed

Li, Jianye; Wang, Lung-Shen; Buchholz, D Bruce; Chang, Robert P H

2009-05-01

Through a facile and highly repeatable chemical vapor method, pure three-dimensional hyperbranched Zn(3)As(2) structures and ultralong Ga(2)O(3) nanowires were simultaneously grown with controllable locations in the same experiment. The hyperbranched Zn(3)As(2) consists of cone-shaped submicro-/nanowires and has a single-crystalline tetragonal structure. This is the first report of nano Zn(3)As(2) and hyperbranched Zn(3)As(2) structures. The as-grown Ga(2)O(3) nanowires are monoclinic single crystals. A vapor-solid-solid mechanism is suggested for the growth of the Ga(2)O(3) nanowires, and a vapor-solid mechanism, for the Zn(3)As(2) structures.

Efficiencies of Eu{sup 3+} ions and hydrogen atoms as donors in ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp

2016-09-15

The donor efficiencies of Eu{sup 3+} ions and hydrogen atoms in ZnO crystalline films were investigated with reference to that of Ga{sup 3+} ions. It was found that Eu{sup 3+} ions acted as extrinsic donors in ZnO:Eu films, yielding a resistivity of 1.8 × 10{sup −3} Ω cm at a doping level of 1 at. %. This value is comparable to one for intrinsic donors in undoped ZnO films. The conductivity was maintained as the deposition temperature was increased to 200 °C, and this is evidence for the contribution of extrinsic donors. Deposition of Ga-doped and Eu-doped ZnO films in an H{sub 2}O gasmore » flow produced oxyhydrogenated ZnO:(Ga, H) and ZnO:(Eu, H) films in which the Ga{sup 3+} and Eu{sup 3+} donors were deactivated by oxidization. Nevertheless, hydrogen donors contributed to electrical conduction yielding a resistivity of 1 × 10{sup −2} Ω cm. Postannealing in an H{sub 2} gas ambient alleviated the excessive oxidization of the films and thereby reactivated the donor action of Ga{sup 3+} and Eu{sup 3+} ions, causing the resistivity to recover to 10{sup −3} Ω cm for ZnO:(Ga, H) and 10{sup −2} Ω cm for ZnO:(Eu, H). In contrast, vacuum annealing of ZnO:(Ga, H) and ZnO:(Eu, H) films increased resistivity through removal of hydrogen donors while not affecting the oxidized condition of the samples.« less

Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yijun; Rowland, Clare E; Schaller, Richard D

2014-08-26

Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch comparedmore » with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.« less

Enhanced photoluminescence property and broad color emission of ZnGa2O4 phosphor due to the synergistic role of Eu3+ and carbon dots

NASA Astrophysics Data System (ADS)

Huo, Qiuyue; Tu, Weixia; Guo, Lin

2017-10-01

ZnGa2O4 phosphors co-composited with nanoscale carbon dots (CDs) and Eu3+ were presented for the tunable color emission. Novel single phase CDs or/and Eu3+ composited ZnGa2O4 phosphors were synthesized by microwave hydrothermal method and their optical properties were investigated. The ZnGa2O4 phosphors composited with CDs exhibited an intense broad blue light emission at 421 nm and a more enhanced photoluminescence intensity than those without CDs. The Eu3+ composited ZnGa2O4 phosphors gave an ideal red color emission. The CDs/Eu3+ co-composited ZnGa2O4 phosphors exhibited a wide emission band peak at 450 nm and narrow emission peak at 618 nm. Furthermore, the tunable color emissions of CDs/Eu3+ co-composited ZnGa2O4 phosphors from blue to the white light region, and then to red were obtained with the increasing Eu3+ concentration, which can be a promising single phased phosphor candidate in light emitting diodes. Broadly tunable emission single phased phosphor is tuned firstly through the synergistic role of the non-metal element and the rare earth metal ions.

Rational design and synthesis of yolk-shell ZnGa2O4@C nanostructure with enhanced lithium storage properties

NASA Astrophysics Data System (ADS)

Han, Nao; Xia, Yuguo; Han, Yanyang; Jiao, Xiuling; Chen, Dairong

2018-03-01

The ability to create hybrid nanostructure with synergistic effect and confined morphology to achieve high performance and long-term stability is high desirable in lithium ion batteries. Although transition metal oxides as anode material reveal high theoretical capacities, the significant volume changes during repeated lithium insertion and extraction cause pulverization of electrode materials, resulting in rapid fade in capacity. Herein, yolk-shell nanostructure of ZnGa2O4 encapsulated by amorphous carbon is rationally designed and synthesized through two-step surface coating followed by thermal treatment and etching process. It is noteworthy that ZnGa2O4@C with yolk-shell structure is superior to pristine ZnGa2O4 and ZnGa2O4@C with core-shell structure in term of lithium storage. The stable reversible capacity of yolk-shell ZnGa2O4@C can be retained at 657.2 mAh g-1 at current density of 1 A g-1 after completion of 300 cycles, which also reveals superior rate performance. The appropriate carbon shell and void space involved in the yolk-shell structure are considered to be the crucial factor in accommodating volume expansion as well as preserving the structural integrity of yolk-shell ZnGa2O4@C.

Spinel, YbFe2O4, and Yb2Fe3O7 types of structure for compounds in the In2O3 and Sc2O3-A2O3-BO systems (A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn) at temperatures over 1000C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kimizuka, N.; Mohri, T.

In the Sc2O3-Ga2O3-CuO, Sc2O3-Ga2O3-ZnO, and Sc2O3-Al2O3-CuO systems, ScGaCuO4, ScGaZnO4, and ScAlCuO4 with the YbFe2O4-type structure and Sc2Ga2CuO7 with the Yb2Fe3O7-type structure were obtained. In the In2O3-A2O3-BO systems (A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, or Zn), InGaFeO4, InGaNiO4, and InFeT MgO4 with the spinel structure, InGaZnO4, InGaMgO4, and InAl-CuO4 with the YbFe2O4-type structure, and In2Ga2MnO7 and In2Ga2ZnO7 with the Yb2Fe3O7-type structure were obtained. InGaMnO4 and InFe2O4 had both the YbFe2O4-type and spinel-type structures. The revised classification for the crystal structures of AB2O4 compounds is presented, based upon the coordination numbers of constituent A and B cations. 5more » references, 2 tables.« less

Structural, mechanical and optical investigations in the TeO2-rich part of the TeO2-GeO2-ZnO ternary glass system

NASA Astrophysics Data System (ADS)

Ghribi, N.; Dutreilh-Colas, M.; Duclère, J.-R.; Gouraud, F.; Chotard, T.; Karray, R.; Kabadou, A.; Thomas, P.

2015-02-01

Stable glasses are successfully synthesized in the TeO2-GeO2-ZnO system at 850 °C by the melt-quenching method and the glass forming domain is determined in the TeO2-rich part of the diagram. The thermal study, carried out using differential scanning calorimetry, reveals that the glass transition temperature, as well as the thermal stability, increases with the addition of ZnO or GeO2. Bulk glass samples are elaborated within two series of compositions, corresponding to fixed concentrations in GeO2 (respectively 5 or 10 mol. %), and to various contents in ZnO. Structural changes caused by the ZnO addition are discussed based on Raman spectroscopy data. A progressive but very moderate network depolymerization is shown with increasing amount of ZnO. However, two different regimes can be identified, depending on the ZnO content. It is believed that ZnO acts as a network modifier for compositions below 20 mol. %, and starts to participate as a glass network former over such concentration. It is well evidenced that GeO2 contributes to the increase in Young's modulus E, evaluated from ultrasonic echography measurements. In addition, this oxide favors the network reticulation detected by the decrease of the Poisson ratio and the increase of the fractal bond connectivity. However, the role of ZnO is more complicated and will be extensively discussed. The decrease in the atomic packing density Cg probably explains the global evolution of E as a function of ZnO content. The refractive indices and optical band gap energies are extracted from UV-Visible-NIR optical transmission data. For the studied glasses, it is found that the transmission threshold decreases with larger ZnO contents, reflecting the increase in the optical band gap value. Refractive index is finally seen to decrease as a function of both ZnO and GeO2 contents. Such variation is explained by the decrease of the molar electronic polarizability, and by the lower optical basicity values known for TeO3 entities in comparison to TeO4 units.

Electronic Structure and Optical Properties of Cu2ZnGeSe4 : First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

NASA Astrophysics Data System (ADS)

Choi, S. G.; Park, J.-S.; Donohue, A. L.; Christensen, S. T.; To, B.; Beall, C.; Wei, S.-H.; Repins, I. L.

2015-11-01

Cu2ZnGeSe4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric function ɛ =ɛ1+i ɛ2 spectrum of polycrystalline Cu2ZnGeSe4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peak shapes and relative intensities between experimental spectra and the calculated ɛ data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. The complex refractive index N =n +i k , normal-incidence reflectivity R , and absorption coefficients α are calculated from the modeled ɛ spectrum, which are also compared with those of Cu2ZnSnSe4 . The spectral features for Cu2ZnGeSe4 appear to be weaker and broader than those for Cu2ZnSnSe4 , which is possibly due to more structural imperfections presented in Cu2ZnGeSe4 than Cu2ZnSnSe4 .

Epitaxy of Zn{sub 2}TiO{sub 4} (1 1 1) thin films on GaN (0 0 1)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsiao, Chu-Yun; Wu, Jhih-Cheng; Shih, Chuan-Feng, E-mail: cfshih@mail.ncku.edu.tw

2013-03-15

Highlights: ► High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by sputtering. ► Oxygen atmosphere and post heat-treatment annealing effectively enhanced epitaxy. ► The epitaxial Zn{sub 2}TiO{sub 4} modifies the dielectric properties of ceramic oxide. - Abstract: High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn{sub 2}TiO{sub 4} films. Lattice image at the Zn{sub 2}TiO{sub 4} (1 1 1)/GaN (0 0 1) interface was obtained by high-resolutionmore » transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (111){sub Zn{sub 2TiO{sub 4}}}||(001){sub GaN}, (202{sup ¯}){sub Zn{sub 2TiO{sub 4}}}||(110){sub GaN},and[21{sup ¯}1{sup ¯}]{sub Zn{sub 2TiO{sub 4}}}||[01{sup ¯}10]{sub GaN}. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn{sub 2}TiO{sub 4} based capacitor were ∼18.9, 8.38 × 10{sup 11} eV{sup −1} cm{sup −2}, and 1.1 V, respectively, indicating the potential applications of the Zn{sub 2}TiO{sub 4} thin film to the GaN-based metal-oxide-semiconductor capacitor.« less

A hetero-homogeneous investigation of chemical bath deposited Ga-doped ZnO nanorods

NASA Astrophysics Data System (ADS)

Rakhsha, Amir Hosein; Abdizadeh, Hossein; Pourshaban, Erfan; Golobostanfard, Mohammad Reza

2018-01-01

One-dimensional nanostructures of zinc oxide (ZnO) have been in the center of attention, mostly for electronic applications due to their distinctive properties such as high electron mobility (100 cm2V-1s-1) and crystallinity. Thanks to its high density of vacancies and interstitial sites, wurtzite lattice of ZnO is a suitable host for gallium (Ga) as a dopant element. Herein, ZnO nanorod arrays (NRAs) are synthesized by a low-temperature chemical bath deposition (CBD) method with various concentrations of gallium nitrate hydrate as a dopant precursor. Structural and morphological analyses confirm that optimum properties of gallium-doped ZnO (GZO) are obtained at 1% (Ga to Zn molar ratio). Owing to the replacement of smaller Ga3+ ions with Zn2+ ions in the GZO structure, a slight shift of (002) peak to higher angles could be observed in XRD pattern of GZO NRAs. The scanning electron microscope images demonstrate a proliferation in the ZnO NRAs length from 650 nm for undoped ZnO (UZO) to 1200 nm for GZO-1%. However, increasing the dopant concentration above 2.5% results in formation of homogeneous zinc gallium oxide in the bulk solution, which is a sign of inefficient process of doping in GZO NRAs. Furthermore, photoluminescence spectroscopy is used to characterize the band-gap variation of the samples, which demonstrates a small red-shift in the UV emission peak and a decrease in visible emission peak intensity with introducing Ga in ZnO lattice. Lower resistivity for GZO-1% (1.1 MΩ) sample compared to UZO (1.4 MΩ) is recorded, which is compelling evidence for the presence of Ga3+ in ZnO lattice. The results suggest that incorporating Ga into ZnO lattice using CBD method is an easy and effective technique to improve the electrical properties of ZnO NRAs that is an essential factor for a broad range of devices.

Synthesis of GaN:ZnO solid solution by solution combustion method and characterization for photocatalytic application

NASA Astrophysics Data System (ADS)

Menon, Sumithra Sivadas; Anitha, R.; Gupta, Bhavana; Baskar, K.; Singh, Shubra

2016-05-01

GaN-ZnO solid solution has emerged as a successful and reproducible photocatalyst for overall water splitting by one-step photoexcitation, with a bandgap in visible region. When the solid solution is formed, some of the Zn and O ions are replaced by Ga and N ions respectively and there is a narrowing of bandgap which is hypothesized as due to Zn3d-N2p repulsion. The traditional method of synthesis of GaN-ZnO solid solution is by nitridation of the starting oxides under constant ammonia flow. Here we report a solution combustion technique for the synthesis of the solid solution at a temperature about 500 ° C in a muffle furnace with metal nitrates as precursors and urea as the fuel. The as prepared samples showed change in color with the increased concentration of ZnO in the solution. The structural, microstructural, morphological and optical properties of the samples were realized by Powder X ray diffraction, Scanning electron microscopy, Energy dispersive X ray analysis, Transmission electron microscopy and Photoluminescence. Finally the hydrogen production efficiency of the GaN-ZnO nanopowders by water splitting was found, using methanol as a scavenger. The apparent quantum yield (AQY) of 0.048% is obtained for GaN-ZnO solid solution.

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

PubMed

Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

2005-07-01

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

Spectrum lines of highly ionized zinc, germanium, selenium, zirconium, molybdenum, and silver injected into Princeton Large Torus and Tokamak Fusion Test Reactor tokamak discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hinnov, E.; Boody, F.; Cohen, S.

1986-10-01

Measured wavelengths of a number of highly ionized atoms are reported. These include the 3s/sup 2/3p--3s3p/sup 2/ and 3s/sup 2/3p--3s/sup 2/3d transitions in the aluminum isoelectronic sequence of Zn XVIII, Ge XX, Se XXII, Zr XXVIII, Mo XXX, and Ag XXXV; several transitions in the n = 2 shell of Zn XXII, Zn XXIII, and Zn XXIV; and the resonance and intercombination lines of Ag XXXVI--Ag XXXVII and of Ge XXIX--Ge XXX.

On the structure of negative-parity states in 66Zn and 70Ge

NASA Astrophysics Data System (ADS)

Cleemann, L.; Eberth, J.; Neumann, W.; Zobel, V.

1982-09-01

Mean lifetimes of negative-parity states in 66Zn and 70Ge have been measured using the recoil distance Doppler shift technique. The states in 66Zn have been studied through the reaction 55Mn( 14N, 2pnγ) 66Zn at E = 47 MeV, those in 70Ge through the reaction 56Fe( 16O, 2pγ) 70Ge at E = 46 MeV. The measurements were performed with a plunger apparatus with a piezo-electric distance regulation. The mean lifetimes in 66Zn were measured to be 66 ± 4ps (5 - state), 43 ± 2 ps (6 - state), 192 ± 15 ps (7 - state), and 2.7 ± 1.2 ps (9 - state), those of 70Ge 19.7 ± 2 ps (5 - state), 51 ± 4 ps (6 - state), and 25.2 ± 1.4 ps (7 - state). Deduced B ( Ml) and B( E2) values are compared with theoretical predictions of a two-proton cluster-vibration coupling model (CVM) which describes these states as couplings of g {9}/{2} ⊗ (fp shell) proton clusters to zero, one and higher phonon excitations of the corresponding Ni and Zn cores. Good overall agreement between the theoretical values and the experimental data was found.

Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes.

PubMed

Fang, Fang; Zhao, Dongxu; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2010-07-07

Through a facile low-temperature solution process, vertically n-type ZnO nanorod arrays were grown on a GaN film to form a n-ZnO nanorod/p-GaN film heterojunction. A study of the electroluminescence (EL) characteristics of the heterojunction in air and in air with 2000 ppm hydrogen revealed the sensitivity of such a device to the surrounding atmosphere. The additional hydrogen shallow donors increased the effective electron concentration in ZnO nanorods and the EL recombination zone changed from the ZnO nanorods to the GaN film, which can be identified visually from the color change.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Anisotropic polaron localization and spontaneous symmetry breaking: Comparison of cation-site acceptors in GaN and ZnO

NASA Astrophysics Data System (ADS)

Sun, Y. Y.; Abtew, Tesfaye A.; Zhang, Peihong; Zhang, S. B.

2014-10-01

The behavior of cation substitutional hole doping in GaN and ZnO is investigated using hybrid density functional calculations. Our results reveal that Mg substitution for Ga (MgGa) in GaN can assume three different configurations. Two of the configurations are characterized by the formation of defect-bound small polaron (i.e., a large structural distortion accompanied by hole localization on one of the neighboring N atoms). The third one has a relatively small but significant distortion that is characterized by highly anisotropic polaron localization. In this third configuration, MgGa exhibits both effective-mass-like and noneffective-mass-like characters. In contrast, a similar defect in ZnO, LiZn, cannot sustain the anisotropic polaron in the hybrid functional calculation, but undergoes spontaneous breaking of a mirror symmetry through a mechanism driven by the hole localization. Finally, using NaZn in ZnO as an example, we show that the deep acceptor levels of the small-polaron defects could be made shallower by applying compressive strain to the material.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Enhanced photocatalytic degradation of 2-propanol over macroporous GaN/ZnO solid solution prepared by a novel sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lizhong; Ouyang, Shuxin; Ren, Bofan

2015-10-01

Macroporous GaN/ZnO solid solution photocatalyst is synthesized through a novel sol-gel method under mild conditions. The performance of as-synthesized solid solution photocatalyst is evaluated for decomposition of gaseous 2-propanol (IPA). It is found that due to enhancement in both the adsorption to gaseous IPA and the absorbance to visible light, the porous GaN/ZnO solid solution exhibits a good photocatalytic performance for IPA decomposition. Moreover, the mechanism for photocatalytic degradation IPA over porous GaN/ZnO solid solution is also investigated in comparison with those for the two end materials ZnO and GaN. The trapping effects with different scavengers prove that both themore » photoexcited electrons and holes affect the IPA photodegradation process, simultaneously.« less

A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime

NASA Astrophysics Data System (ADS)

Yu, Fei; Ma, Xiaoyu; Deng, Wanling; Liou, Juin J.; Huang, Junkai

2017-11-01

A physics-based drain current compact model for amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) is proposed. As a key feature, the surface potential model accounts for both exponential tail and deep trap densities of states, which are essential to describe a-InGaZnO TFT electrical characteristics. The surface potential is solved explicitly without the process of amendment and suitable for circuit simulations. Furthermore, based on the surface potential, an explicit closed-form expression of the drain current is developed. For the cases of the different operational voltages, surface potential and drain current are verified by numerical results and experimental data, respectively. As a result, our model can predict DC characteristics of a-InGaZnO TFTs.

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

NASA Astrophysics Data System (ADS)

Jiang, Fan; Chen, Jingwen; Bi, Han; Li, Luying; Jing, Wenkui; Zhang, Jun; Dai, Jiangnan; Che, Renchao; Chen, Changqing; Gao, Yihua

2018-01-01

Non-polar a-plane n-ZnO/p-AlGaN and n-ZnO/i-ZnO/p-AlGaN heterojunction film light-emitting diodes (LEDs) are fabricated with good crystalline quality. The optical measurements show obvious performance enhancement with i-ZnO layer insertion. Off-axis electron holography reveals a potential drop of ˜1.5 V across the heterojunctions with typical p-n junction characteristics. It is found that the electrostatic potentials are inclined and the corresponding electrostatic fields are opposite to each other in n-ZnO and p-AlGaN regions. The electrostatic fields are mainly attributed to strain induced piezoelectric polarizations. After an insertion of an i-ZnO layer into the p-n heterojunction, comparatively flat electrostatic potential generates in the intrinsic ZnO region and contributes to faster movements of the injected electrons and holes, making the i-ZnO layer more conductive to the radiative recombination with enhanced exciton recombination possibilities and at last the LED performance enhancement.

Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals: The evaluation of the displacement in oxygen lattices

NASA Astrophysics Data System (ADS)

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

2014-08-01

The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6 × 1020 cm-3) into ZnO is performed using a multiple-step energy. The high resistivity of ∼103 Ω cm in un-implanted samples remarkably decreased to ∼10-2 Ω cm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000 °C annealed ZnO.

Study on the effects of Ga-2N high co-doping and preferred orientation on the stability, bandgap and absorption spectrum of ZnO

NASA Astrophysics Data System (ADS)

Hou, Qing-Yu; Li, Wen-Cai; Qu, Ling-Feng; Zhao, Chun-Wang

2017-06-01

Currently, the stability and visible light properties of Ga-2N co-doped ZnO systems have been studied extensively by experimental analysis and theoretical calculations. However, previous theoretical calculations arbitrarily assigned Ga- and 2N-doped sites in ZnO. In addition, the most stable and possible doping orientations of doped systems have not been fully and systematically considered. Therefore, in this paper, the electron structure and absorption spectra of the unit cells of doped and pure systems were calculated by first-principles plane-wave ultrasoft pseudopotential with the GGA+U method. Calculations were performed for pure ZnO, Ga-2N supercells heavily co-doped with Zn1-xGaxO1-yNy (x = 0.03125 - 0.0625, y = 0.0625 - 0.125) under different co-doping orientations and conditions, and the Zn16GaN2O14 interstitial model. The results indicated that under different orientations and constant Ga-2N co-doping concentrations, the systems co-doped with Ga-N atoms vertically oriented to the c-axis and with another N atom located in the nearest-neighboring site exhibited higher stability over the others, thus lowering formation energy and facilitating doping. Moreover, Ga-interstitial- and 2N-co-doped ZnO systems easily formed chemical compounds. Increasing co-doping concentration while the co-doping method remained constant decreased doped system volume and lowered formation energies. Meantime, co-doped systems were more stable and doping was facilitated. The bandgap was also narrower and red shifting of the absorption spectrum was more significant. These results agreed with previously reported experimental results. In addition, the absorption spectra of Ga-interstitial- and 2N-co-doped ZnO both blue shifted in the UV region compared with that of the pure ZnO system.

Plasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes

NASA Astrophysics Data System (ADS)

Leung, Yu Hang; Ng, Alan M. C.; Djurišic, Aleksandra B.; Chan, Wai Kin; Fong, Patrick W. K.; Lui, Hsien Fai; Surya, Charles

2014-03-01

Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kvit, A. V.; Yankovich, A. B.; Avrutin, V.; Liu, H.; Izyumskaya, N.; Özgür, Ü.; Morkoç, H.; Voyles, P. M.

2012-12-01

We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapphire by aberration-corrected scanning transmission electron microscopy. Growth under oxygen-rich and metal-rich growth conditions leads to changes in the GZO polarity and different extended defects. For GZO layers on sapphire, the primary extended defects are voids, inversion domain boundaries, and low-angle grain boundaries. Ga doping of ZnO grown under metal-rich conditions causes a switch from pure oxygen polarity to mixed oxygen and zinc polarity in small domains. Electron energy loss spectroscopy and energy dispersive spectroscopy spectrum imaging show that Ga is homogeneous, but other residual impurities tend to accumulate at the GZO surface and at extended defects. GZO grown on GaN on c-plane sapphire has Zn polarity and no voids. There are misfit dislocations at the interfaces between GZO and an undoped ZnO buffer layer and at the buffer/GaN interface. Low-angle grain boundaries are the only threading microstructural defects. The potential effects of different extended defects and impurity distributions on free carrier scattering are discussed.

PAL spectroscopy of rare-earth doped Ga-Ge-Te/Se glasses

NASA Astrophysics Data System (ADS)

Shpotyuk, Ya.; Ingram, A.; Shpotyuk, O.

2016-04-01

Positron annihilation lifetime (PAL) spectroscopy was applied for the first time to study free-volume void evolution in chalcogenide glasses of Ga-Ge-Te/Se cut-section exemplified by glassy Ga10Ge15Te75 and Ga10Ge15Te72Se3 doped with 500 ppm of Tb3+ or Pr3+. The collected PAL spectra reconstructed within two-state trapping model reveal decaying tendency in positron trapping efficiency in these glasses under rare-earth doping. This effect results in unchanged or slightly increased defect-related lifetimes τ2 at the cost of more strong decrease in I2 intensities, as well as reduced positron trapping rate in defects and fraction of trapped positrons. Observed changes are ascribed to rare-earth activated elimination of intrinsic free volumes associated mainly with negatively-charged states of chalcogen atoms especially those neighboring with Ga-based polyhedrons.

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Kang, B. S.; Wang, H. T.; Ren, F.; Pearton, S. J.; Morey, T. E.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2007-12-01

ZnO nanorod-gated AlGaN /GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature hydrothermal decomposition to immobilize glucose oxidase (GOx). The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GOx. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target glucose in a buffer with a pH value of 7.4 was added to the GOx immobilized on the ZnO nanorod surface. We could detect a wide range of concentrations from 0.5nMto125μM. The sensor exhibited a linear range from 0.5nMto14.5μM and an experiment limit of detection of 0.5nM. This demonstrates the possibility of using AlGaN /GaN HEMTs for noninvasive exhaled breath condensate based glucose detection of diabetic application.

Intrinsic and extrinsic doping of ZnO and ZnO alloys

NASA Astrophysics Data System (ADS)

Ellmer, Klaus; Bikowski, André

2016-10-01

In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the application of highly doped n-type ZnO as a transparent electrode, for instance in thin film solar cells. For prospective application of ZnO in other electronic devices (LEDs, UV photodetectors or power devices) p-type doping is required, which has been reported only minimally. Highly n-type doped ZnO can be prepared by doping with the group IIIB elements B, Al, Ga, and In, which act as shallow donors according to the simple hydrogen-like substitutional donor model of Bethe (1942 Theory of the Boundary Layer of Crystal Rectifiers (Boston, MA: MIT Rad Lab.)). Group IIIA elements (Sc, Y, La etc) are also known to act as shallow donors in ZnO, similarly explainable by the shallow donor model of Bethe. Some reports showed that even group IVA (Ti, Zr, Hf) and IVB (Si, Ge) elements can be used to prepare highly doped ZnO films—which, however, can no longer be explained by the simple hydrogen-like substitutional donor model. More probably, these elements form defect complexes that act as shallow donors in ZnO. On the other hand, group V elements on oxygen lattice sites (N, P, As, and Sb), which were viewed for a long time as typical shallow acceptors, behave instead as deep acceptors, preventing high hole concentrations in ZnO at room temperature. Also, ‘self’-compensation, i.e. the formation of a large number of intrinsic donors at high acceptor concentrations seems to counteract the p-type doping of ZnO. At donor concentrations above about 1020 cm-3, the electrical activation of the dopant elements is often less than 100%, especially in polycrystalline thin films. Reasons for the electrical deactivation of the dopant atoms are (i) the formation of dopant-defect complexes, (ii) the compensation of the electrons by acceptors (Oi, VZn) or (iii) the formation of secondary phases, for instance Al2O3, Ga2O3 etc. The strong influence of the different deposition methods and annealing conditions on the doping of ZnO is discussed. This review shows that, though it is one of the best-investigated oxide compound semiconductors over many decades, understanding of the details of the doping properties and mechanisms of zinc oxide is still in its infancy. Based on this review, prospective research opportunities are devised.

Electronic Structure and Optical Properties of Cu 2ZnGeSe 4. First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Sukgeun; Park, Ji-Sang; Donohue, Andrea

2015-11-19

Cu 2ZnGeSe 4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric functionϵ=ϵ1+iϵ2 spectrum of polycrystalline Cu 2ZnGeSe 4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peakmore » shapes and relative intensities between experimental spectra and the calculated ϵ data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. We found that the complex refractive index N=n+ik, normal-incidence reflectivity R, and absorption coefficients α are calculated from the modeled ϵ spectrum, which are also compared with those of Cu 2ZnSnSe 4 . The spectral features for Cu 2ZnGeSe 4 appear to be weaker and broader than those for Cu 2ZnSnSe 4 , which is possibly due to more structural imperfections presented in Cu 2ZnGeSe 4 than Cu 2ZnSnSe 4 .« less

Experimental determination of crystal/melt partitioning of Ga and Ge in the system forsterite-anorthite-diopside

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malvin, D.J.; Drake, M.J.

1987-08-01

The crystal/liquid partitioning of Ga and Ge has been measured experimentally between forsterite, diopside, anorthite and spinel and melts in the pseudoternary system forsterite-anorthite-diopside at one atmosphere pressure and 1300/sup 0/C. Gallium is incompatible with forsterite and diopside, is only slightly incompatible in anorthite, and is highly compatible in spinel. The partition coefficient for Ge is within a factor of two of unity for forsterite, diopside, and anorthite, but Ge is incompatible in spinel (D (Ge) = 0.1). The coefficients for the exchange of Ga and Al and the exchange of Ge and Si between minerals and melts generally aremore » within a factor of two of unity, as it expected from the geochemical coherence of these element pairs in natural samples. The application of these results to the interpretation of natural basaltic and mantle samples from the Earth and basalts from the Moon and the Shergottite Parent Body demonstrates that it is possible to discriminate between different mantle source compositions using Ga/Al and Ge/Si ratios. The Ge variation among lunar mare basalts may be indicative of a heterogeneous lunar mantle. The substantial depletion of Ge in Chassigny relative to the other SNC meteorites may be evidence of either a heterogeneous Shergottite Parent Body (SPB) mantle, or of different geochemical behavior for Ge in the SPB.« less

Synthesis of GaN:ZnO solid solution by solution combustion method and characterization for photocatalytic application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menon, Sumithra Sivadas; Anitha, R.; Baskar, K.

2016-05-23

GaN-ZnO solid solution has emerged as a successful and reproducible photocatalyst for overall water splitting by one-step photoexcitation, with a bandgap in visible region. When the solid solution is formed, some of the Zn and O ions are replaced by Ga and N ions respectively and there is a narrowing of bandgap which is hypothesized as due to Zn3d-N2p repulsion. The traditional method of synthesis of GaN-ZnO solid solution is by nitridation of the starting oxides under constant ammonia flow. Here we report a solution combustion technique for the synthesis of the solid solution at a temperature about 500 °more » C in a muffle furnace with metal nitrates as precursors and urea as the fuel. The as prepared samples showed change in color with the increased concentration of ZnO in the solution. The structural, microstructural, morphological and optical properties of the samples were realized by Powder X ray diffraction, Scanning electron microscopy, Energy dispersive X ray analysis, Transmission electron microscopy and Photoluminescence. Finally the hydrogen production efficiency of the GaN-ZnO nanopowders by water splitting was found, using methanol as a scavenger. The apparent quantum yield (AQY) of 0.048% is obtained for GaN-ZnO solid solution.« less

Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping.

PubMed

Xie, Xiuhua; Zhang, Zhenzhong; Li, Binghui; Wang, Shuangpeng; Jiang, Mingming; Shan, Chongxin; Zhao, Dongxu; Chen, Hongyu; Shen, Dezhen

2014-01-13

We report on gallium (Ga) doped cubic MgZnO films, which have been grown by metal organic chemical vapor deposition. It was demonstrated that Ga doping improves the n-type conduction of the cubic MgZnO films. A two-orders of magnitude enhancement in lateral n-type conduction have been achieved for the cubic MgZnO films. The responsivity of the cubic MgZnO-based photodetector has been also enhanced. Depletion region electric field intensity enhanced model was adopted to explain the improvement of quantum efficiency in Ga doped MgZnO-based detectors.

Growth of well-aligned ZnO nanorods using auge catalyst by vapor phase transportation.

PubMed

Ha, S Y; Jung, M N; Park, S H; Ko, H J; Ko, H; Oh, D C; Yao, T; Chang, J H

2006-11-01

Well-aligned ZnO nanorods have been achieved using new alloy (AuGe) catalyst. Zn powder was used as a source material and it was transported in a horizontal tube furnace onto an AuGe deposited Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, high resolution X-ray diffraction, and photoluminescence. ZnO nanorods grown at 650 degrees C on 53 nm thick AuGe layer show uniform shape with the length of 8 +/- 0.5 microm and the diameter of 150 +/- 5 nm. Also, the tilting angle of ZnO nanorods (+/- 5.5 degrees) is confirmed by HRXRD. High structural quality of the nanorods is conformed by the photoluminescence measurement. All samples show strong UV emission without considerable deep level emission. However, weak deep level emission appears at high (700 degrees C) temperature due to the increase of oxygen desertion.

Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

NASA Astrophysics Data System (ADS)

Mondal, Praloy; Das, Debajyoti

2017-07-01

Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I〈002〉/I〈103〉 > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm-1 and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO2 coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (VOC) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO2 counterpart, maintains a high transparency to the solar radiation and improves the VOC, while reduced diffusion of Zn across the p-layer creates less defects at the p-i interface in Si:H cells and thereby, increases the FF. Nearly identical conversion efficiency is preserved for both TCO substrates. Excellent c-axis orientation even at low growth temperature promises improved device performance by extended parametric optimization.

INFLUENCE OF THE CHEMICAL POTENTIAL ON THE CARRIER EFFECTIVE MASS IN THE THERMOELECTRIC SOLID SOLUTION Cu2Zn1-xFexGeSe4

NASA Astrophysics Data System (ADS)

Zeier, Wolfgang G.; Day, Tristan; Schechtel, Eugen; Snyder, G. Jeffrey; Tremel, Wolfgang

2013-08-01

In this paper, we describe the synthesis and characterization of the solid solution Cu2Zn1-xFexGeSe4. Electronic transport data have been analyzed using a single parabolic band model and have been compared to Cu2+xZn1-xGeSe4. The effective mass of these undoped, intrinsically hole conducting materials increases linearly with increasing carrier concentration, showing a non-parabolic transport behavior within the valence band.

Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.

PubMed

Kim, Sungwoo; Kim, Taehoon; Kang, Meejae; Kwak, Seong Kwon; Yoo, Tae Wook; Park, Lee Soon; Yang, Ilseung; Hwang, Sunjin; Lee, Jung Eun; Kim, Seong Keun; Kim, Sang-Wook

2012-02-29

Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K. © 2012 American Chemical Society

Formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment in an atomic hydrogen flux

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erofeev, E. V., E-mail: erofeev@micran.ru; Kazimirov, A. I.; Fedin, I. V.

The systematic features of the formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatment of the Cu/Ge/i-GaAs system, in which the layer thicknesses are, correspondingly, 122 and 78 nm, in atomic hydrogen with a flux density of 10{sup 15} at cm{sup 2} s{sup –1} for 2.5–10 min at room temperature induces the interdiffusion of Cu and Ge, with the formation of a polycrystalline film containing the stoichiometric Cu{sub 3}Ge phase. The film consists of vertically orientedmore » grains 100–150 nm in size and exhibits a minimum resistivity of 4.5 µΩ cm. Variations in the time of treatment of the Cu/Ge/i-GaAs samples in atomic hydrogen affect the Cu and Ge depth distribution, the phase composition of the films, and their resistivity. Experimental observation of the synthesis of the Cu{sub 3}Ge compound at room temperature suggests that treatment in atomic hydrogen has a stimulating effect on both the diffusion of Cu and Ge and the chemical reaction of Cu{sub 3}Ge-compound formation. These processes can be activated by the energy released upon the recombination of hydrogen atoms adsorbed at the surface of the Cu/Ge/i-GaAs sample.« less

The synthesis and the luminescence properties of Sr2Ga3La1-xDyxGe3O14

NASA Astrophysics Data System (ADS)

Wang, Qiang; Mu, Zhongfei; Yang, Lurong; Zhang, Shaoan; Zhu, Daoyun; Yang, Yibin; Luo, Dongxiang; Wu, Fugen

2018-02-01

A series of Sr2Ga3La1-xDyxGe3O14 (x = 0, 0.015, 0.03, 0.045, 0.06, 0.075, 0.09) phosphors were synthesized by high temperature solid state reactions. X-ray diffraction analysis proves that single-phase Sr2Ga3La1-xDyxGe3O14 (0 ≤ x ≤ 0.09) has been obtained. The particle size of these powders is in the range from 1 to 3 μm. The host Sr2Ga3LaGe3O14 emits blue white light under the excitation of 260 nm ultraviolet light. Dy3+ doped samples can be effectively excited with near ultraviolet light and exhibit two emission bands in the blue (4F9/2 → 6H15/2) and yellow regions (4F9/2 → 6H13/2), which can form white light. Present research indicates that Dy3+ doped Sr2Ga3LaGe3O14 have the potential to be a single-phase full-color emitting phosphor.

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

NASA Astrophysics Data System (ADS)

Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

2018-01-01

Heterostructures of wurtzite based devices have attracted great research interest because of the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN thin films on inexpensive and lattice matched ZnO substrates are both commercially and technologically desirable. Intrinsic wetting conditions, however, forbid such heterostructures as the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces, resulting in 3D growth mode and poor crystal quality. Based on first-principles calculations, we propose the use of surfactant hydrogen to dramatically alter the growth mode of the heterostructures. Stable H-involved surface configurations and interfaces are investigated with the help of our newly developed modelling techniques. The temperature and chemical potential dependence of our proposed strategy, which is critical in experiments, is predicted by applying the experimental Gibbs free energy of H2. Our thermodynamic wetting condition analysis is a crucial step for the growth of GaN on ZnO, and we find that introducing H will not degrade the stability of ZnO substrate. This approach will allow the growth of high-quality GaN thin films on ZnO substrates. We believe that our new strategy may reduce the manufactory cost, improve the crystal quality, and improve the efficiency of GaN-based devices.

Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

PubMed

Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

2015-07-27

In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

ZnO thin films and nanostructures for emerging optoelectronic applications

NASA Astrophysics Data System (ADS)

Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

2010-02-01

ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have <0.5% reflectivity over the whole visible spectrum for angles of incidence between 10 and 60 degrees. Such nanostructures may be useful for applications such as AR coatings on solar cells. Compliant ZnO layers on mismatched/amorphous substrates were shown to have potential for MOVPE regrowth of GaN. This approach could be used as a means to facilitate lift-off of GaN-based LEDs from insulating sapphire substrates and could allow the growth of InGaN-based solar cells on cheap substrates. The green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

New production cross sections for the theranostic radionuclide 67Cu

NASA Astrophysics Data System (ADS)

Pupillo, Gaia; Sounalet, Thomas; Michel, Nathalie; Mou, Liliana; Esposito, Juan; Haddad, Férid

2018-01-01

The cross sections of the 68Zn(p,2p)67Cu, 68Zn(p,2n)67Ga and 68Zn(p,3n)66Ga reactions were measured at the ARRONAX facility by using the 70 MeV cyclotron, with particular attention to the production of the theranostic radionuclide 67Cu. Enriched 68Zn material was electroplated on silver backing and exposed to a low-intensity proton beam by using the stacked-foils target method. Since 67Cu and 67Ga radionuclides have similar half-lives and same γ-lines (they both decay to 67Zn), a radiochemical process aimed at Cu/Ga separation was mandatory to avoid interferences in γ-spectrometry measurements. A simple chemical procedure having a high separation efficiency (>99%) was developed and monitored during each foil processing, thanks to the tracer isotopes 61Cu and 66Ga. Nuclear cross sections were measured in the energy range 35-70 MeV by using reference reactions recommended by the International Atomic Energy Agency (IAEA) to monitor beam flux. In comparison with literature data a general good agreement on the trend of the nuclear reactions was noted, especially with latest measurements, but slightly lower values were obtained in case of 67Cu. Experimental results of the 68Zn(p,2p)67Cu, 68Zn(p,2n)67Ga and 68Zn(p,3n)66Ga reactions were also compared with the theoretical values estimated by using the software TALYS. The production yield of the theranostic radionuclide 67Cu was estimated considering the results obtained in this work.

Photoluminescence of Zn-implanted GaN

NASA Technical Reports Server (NTRS)

Pankove, J. I.; Hutchby, J. A.

1974-01-01

The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

Composition dependent cation distribution in ZnxGa2O3+x nanocrystals

NASA Astrophysics Data System (ADS)

Li, Nannan; Zhu, Pengfei; Duan, Xiulan

2018-02-01

ZnxGa2O3+x (0.8 ≤ x ≤ 1.1) nanocrystals with the size of 15-30 nm were prepared by the sol-gel method. The effect of composition (Zn/Ga ratio) on the distribution of Zn2+ and Ga3+ ions was studied using X-ray photoelectron spectroscopy (XPS). Both of these cations occupied tetrahedral sites as well as octahedral sites of spinel structure in the studied samples. Octahedral Ga3+ ions are dominant and the as-synthesized samples are partially inverse spinel-structure. The fraction of tetrahedral Ga3+ ions was calculated to be 0.07-0.16, and increased with Zn/Ga ratio increasing. The inverse parameter (two times the fraction of Ga3+ in the tetrahedral sites) increases from 0.14 to 0.32 when x value increases from 0.8 to 1.1. The EPR and emission spectra indicated that oxygen vacancies formed in the nanocrystals. The emission intensity of the peak due to oxygen vacancies decreased with increasing Zn/Ga ratio, indicating the decreasing of the concentration of oxygen vacancy.

Characterization of rodlike structures in Si-Ge-GaP alloys

NASA Astrophysics Data System (ADS)

Srikant, V.; Jesser, W. A.; Rosi, F. D.

1996-07-01

High-temperature microstructure of Si-Ge alloys containing 10-15 mole % GaP were studied. Quenching the 80/20 Si-Ge alloy (80 at. % Si) from above 1125 °C and the 50/50 Si-Ge alloy (50 at. % Si) from above 1025 °C resulted in a duplex microstructure. The two-phase regions consisted of a regular array of rodlike structures (GaP) in a Si-Ge matrix whereas the monophase regions were pure Si-Ge. These rodlike structures were found to lie along the [001] direction and result in {002} spots in a [100] electron diffraction pattern. The ``rods'' were about 35 and 45 nm in diameter in the case of the 80/20 and 50/50 alloy, respectively. These structures are not stable on annealing and do not form when the solidification rate is decreased.

Magnetotransport and Heat Capacity in Ternary Compounds U3M2M‧3‧, M=Al, Ga; M=Si, Ge

NASA Astrophysics Data System (ADS)

Troć, R.; Rogl, P.; Tran, V. H.; Czopnik, A.

2001-05-01

We report detailed studies of magnetization, electrical resistivity, magnetoresistivity, and heat capacity performed on the novel family of intermetallic compounds U3M2M‧3, (M=Al, Ga, and M‧=Si, Ge). The present measurements support the earlier conclusions about the ferrimagnetic properties of silicides and ferromagnetic properties of germanides. The resistivity for both compounds U3{Al,Ga}2Si3 exhibits below TC a pronounced maximum observed for the first time in an actinoid-ferrimagnet, probably caused by (a) the reduction of the number of effective conduction carriers or (b) a SDW-type of spin-disorder scattering of electrons. Both low-temperature resistivity (except for U3Ga2Si3) and heat capacity may be described by a T-dependence involving a small gap Δ on the order of 30-50 K in the magnon dispersion. The Cp/T values at 2 K are enhanced and point to a medium-heavy fermion character of all these ternaries. Magnetoresistance for ferrimagnetic U3{Al,Ga}2Si3 is rather small but positive in correspondence of antiferromagnetic interactions. In correspondence to the ferromagnetic materials, negative magnetoresistance is encountered for U3{Al,Ga}2Ge3. Specific features in the temperature dependence of magnetoresistivity Δρ/ρ at various fields confirm the sinusoidal modulation of the magnetic structure for U3Al2Ge3 between 40 and 60 K. Also, such data for U3Ga2Ge3 present strong indications for a similar magnetic modulation between 63 and 93 K, yet to be discovered by neutron diffraction experiments. In addition, the transition at 63 K is furthermore well resolved in the specific heat data of U3Ga2Ge3.

Transparent ZnO-based ohmic contact to p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaminska, E.; Piotrowska, A.; Golaszewska, K.

2002-04-09

Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of {approx}1 x 10{sup -3} {Omega}cm and resulted in ohmic contacts of resistivity {approx}1 x 10{sup -2} {Omega}cm{sup 2} to low-doped p-GaN, and light transmittance of {approx}75% in the wavelength range of 400-700 nm.

Utilization of Metal Sulfide Material of (CuGa)(1-x)Zn(2x)S2 Solid Solution with Visible Light Response in Photocatalytic and Photoelectrochemical Solar Water Splitting Systems.

PubMed

Kato, Takaaki; Hakari, Yuichiro; Ikeda, Satoru; Jia, Qingxin; Iwase, Akihide; Kudo, Akihiko

2015-03-19

Upon forming a solid solution between CuGaS2 and ZnS, we have successfully developed a highly active (CuGa)(1-x)Zn(2x)S2 photocatalyst for H2 evolution in the presence of sacrificial reagents under visible light irradiation. The Ru-loaded (CuGa)0.8Zn0.4S2 functioned as a H2-evolving photocatalyst in a Z-scheme system with BiVO4 of an O2-evolving photocatalyst and Co complexes of an electron mediator. The Z-scheme system split water into H2 and O2 under visible light and simulated sunlight irradiation. The (CuGa)(1-x)Zn(2x)S2 possessed a p-type semiconductor character. The photoelectrochemical cell with a Ru-loaded (CuGa)0.5ZnS2 photocathode and a CoO(x)-modified BiVO4 photoanode split water even without applying an external bias. Thus, we successfully demonstrated that the metal sulfide material group can be available for Z-scheme and electrochemical systems to achieve solar water splitting into H2 and O2.

Strain Manipulated Magnetic Properties in ZnO and GaN Induced by Cation Vacancy

NASA Astrophysics Data System (ADS)

Gai, Yanqin; Jiang, Jiaping; Wu, Yuxi; Tang, Gang

2016-07-01

The effects of isotropic strains on the magnetic properties in ZnO and GaN induced by cation vacancies are comparatively investigated by density functional theory calculations. The magnetic moments and the couplings between vacancies in different charged states are calculated as a function of strains. The modulation of strain on the magnetic properties relies on the materials and the charge states of cation vacancies in them. As the occurrence of charge transfer in ZnO: V Zn under compression, the coupling between V_{{Zn}}0 is antiferromagnetic (AFM) and it could be stabilized by strains. Tensions can strengthen the ferromagnetic (FM) coupling between V_{{Zn}}0 but weaken that of V_{{Ga}}^{ - } . The neutral V Ga are always AFM coupling under strains from -6 to +6% and could be stabilized by compressions. The interactions between V_{{Ga}}^{ - } are always FM with ignorable variations under strains; however, the FM couplings between V_{{Ga}}^{2 - } could be strengthened by compressions. These varying trends of magnetic coupling under strains are interpreted by the band coupling models. Therefore, strain-engineering provides a route to manipulate and design high Curie temperature ferromagnetism derived and mediated by intrinsic defect for spintronic applications.

Experience in production of (68)Ga-DOTA-NOC for clinical use under an Expanded Access IND.

PubMed

Green, Mark A; Mathias, Carla J; Fletcher, James W

2016-10-01

[(68)Ga]Ga-DOTA-NOC was produced under an Expanded Access IND for 174 clinical PET/CT studies to evaluate patients with neuroendocrine tumors. Production employed either the TiO2-based Eckert & Ziegler (EZAG) (68)Ge/(68)Ga-generator (with fractionated elution), or the SiO2-based ITG (68)Ge/(68)Ga-generator. In both cases, [(68)Ga]Ga-DOTA-NOC was reliably produced, without pre-synthesis purification of the(68)Ga generator eluate, using readily-implemented manual synthesis procedures. [(68)Ga]Ga-DOTA-NOC radiochemical purity averaged 99.2±0.4%. Administered (68)Ga dose averaged 181±22 MBq, and administered peptide mass averaged 43.2±5.2µg (n=47) and 23.9±5.7µg (n=127), respectively, using the EZAG and ITG generators. At dose expiration, (68)Ge breakthrough in the final product averaged 2.7×10(-7)% and 5.4×10(-5%) using the EZAG and ITG generators, respectively. Copyright © 2016 Elsevier Ltd. All rights reserved.

Structure of {sup 81}Ga populated from the {beta}{sup -} decay of {sup 81}Zn

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paziy, V.; Mach, H.; Fraile, L. M.

2013-06-10

We report on the results of the {beta}-decay of {sup 81}Zn. The experiment was performed at the CERN ISOLDE facility in the framework of a systematic ultra-fast timing investigation of neutron-rich nuclei populated in the decay of Zn. The present analysis included {beta}-gated {gamma}-ray singles and {gamma}-{gamma} coincidences from the decay of {sup 81}Zn to {sup 81}Ga and leads to a new and much more extensive level scheme of {sup 81}Ga. A new half-life of {sup 81}Zn is provided.

Equilibrium, Kinetic and Structural Properties of Gallium(III) and Some Divalent Metal Complexes Formed with the New DATAm and DATA5m Ligands.

PubMed

Farkas, Edit; Nagel, Johannes; Waldron, Bradley P; Parker, David; Tóth, Imre; Brücher, Ernő; Rösch, Frank; Baranyai, Zsolt

2017-08-01

The development of 68 Ge/ 68 Ga generators has made the positron-emitting 68 Ga isotope widely accessible and raised interest in new chelate complexes of Ga 3+ . The hexadentate 1,4-di(acetate)-6-methyl[amino(methyl)acetate]perhydro-1,4-diazepane (DATA m ) ligand and its bifunctional analogue, 1,4-di(acetate)-6-pentanoic acid[amino(methyl)acetate]perhydro-1,4-diazepane (DATA 5m ), rapidly form complexes with 68 Ga in high radiochemical yield. The stability constants of DATA m and DATA 5m complexes formed with Ga 3+ , Zn 2+ , Cu 2+ , Mn 2+ and Ca 2+ have been determined by using pH potentiometry, spectrophotometry (Cu 2+ ) and 1 H and 71 Ga NMR spectroscopy (Ga 3+ ). The stability constants of Ga(DATA m ) and Ga(DATA 5m ) complexes are slightly higher than those of Ga(AAZTA). The species distribution calculations indicated the predominance of Ga(L)OH mixed-hydroxo complexes at physiological pH. The 1 H and 71 Ga NMR spectroscopy studies provided information about the coordinated functional groups of ligands and on the kinetics of exchange between the Ga(L) and Ga(L)OH complexes. The transmetalation reactions between the Ga(L) complexes and Cu 2+ citrate (6

Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

NASA Astrophysics Data System (ADS)

Bayram, C.; Shiu, K. T.; Zhu, Y.; Cheng, C. W.; Sadana, D. K.; Teherani, F. H.; Rogers, D. J.; Sandana, V. E.; Bove, P.; Zhang, Y.; Gautier, S.; Cho, C.-Y.; Cicek, E.; Vashaei, Z.; McClintock, R.; Razeghi, M.

2013-03-01

Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.

Influence of Selenization Time on Microstructural, Optical, and Electrical Properties of Cu2ZnGeSe4 Films

NASA Astrophysics Data System (ADS)

Swapna Mary, G.; Hema Chandra, G.; Anantha Sunil, M.; Gupta, Mukul

2018-01-01

We have studied the effects of selenization time on the microstructural, optical, and electrical properties of stacked (Cu/Se/ZnSe/Se/Ge/Se) × 4 layers to demonstrate growth of Cu2ZnGeSe4 (CZGSe) thin films. Electron beam evaporation was used to deposit CZGSe films on glass substrates for selenization in high vacuum at 450°C for different times (15 min, 30 min, 45 min, and 60 min). The incomplete reaction of the precursor layers necessitates selenization at higher temperature for different durations to achieve desirable microstructural and optoelectronic properties. Energy-dispersive spectroscopic measurements revealed that the stacked layers selenized at 450°C for 30 min were nearly stoichiometric with atomic ratios of Cu/(Zn + Ge) = 0.88, Zn/Ge = 1.11, and Se/(Cu + Zn + Ge) = 1.03. X-ray diffraction analysis revealed that the stacks selenized at 450°C for 30 min crystallized in tetragonal stannite structure. Selenization-time-dependent Raman measurements of the selenized stacks are systematically presented to understand the growth of CZGSe. The elemental distribution through depth as a function of selenization time was investigated using secondary-ion mass spectroscopy. The ionic valency of the constituent elements in CZGSe films selenized at 450°C for 30 min was examined using high-resolution x-ray photoelectron spectroscopy. Significant changes were observed in the surface morphology of the stacked layers with increase in selenization time. The effects of defects on the electrical properties and of binary phases on the optical properties are discussed.

Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers

NASA Astrophysics Data System (ADS)

Tu, Ru-Chin; Su, Yan-Kuin; Huang, Ying-Sheng; Chen, Giin-Sang; Chou, Shu-Tsun

1998-09-01

Detailed structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinementheterostructures (SCH) grown on ZnSe, ZnSe/ZnSSe strained-layer superlattices (SLS),and GaAs buffer layers at the II VI/GaAs interface have been carried out by employingtransmission electron microscopy, variable temperature photoluminescence (PL), andcontactless electroreflectance (CER) measurements. A significant improvement onthe defect reduction and the optical quality has been observed by using either theZnSe/ZnSSe SLS or GaAs as the buffer layers when compared to that of the sample usingonly ZnSe as the buffer layer. However, the sample grown with the SLS buffer layersreveals a room temperature PL intensity higher than that of the sample grown witha GaAs buffer layer, which may still suffer from the great ionic differences betweenthe II V and III V atoms. Using 15 K CER spectra, we have also studied variousexcitonic transitions originating from strained Zn0.80Cd0.20Se/ZnSe single quantumwell in SCH with different buffer layers. An analysis of the CER spectra has ledto the identification of various excitonic transitions, mnH (L), between the mthconduction band state and the nth heavy (light)-hole band state. An excellentagreement between experiments and theoretical calculations based on the envelopefunction approximation model has been achieved.

Exciton localization and ultralow onset ultraviolet emission in ZnO nanopencils-based heterojunction diodes.

PubMed

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Long, Yan; Han, Xu; Wu, Bin; Zhang, Baolin; Du, Guotong

2016-09-05

n-GaN/i-ZnO/p-GaN double heterojunction diodes were constructed by vertically binding p-GaN wafer on the tip of ZnO nanopencil arrays grown on n-GaN/sapphire substrates. An increased quantum confinement in the tip of ZnO nanopencils has been verified by photoluminescence measurements combined with quantitative analyses. Under forward bias, a sharp ultraviolet emission at ~375 nm due to localized excitons recombination can be observed in ZnO. The electroluminescence mechanism of the studied diode is tentatively elucidated using a simplified quantum confinement model. Additionally, the improved performance of the studied diode featuring an ultralow emission onset, a good operation stability and an enhanced ultraviolet emission shows the potential of our approach. This work provides a new route for the design and development of ZnO-based excitonic optoelectronic devices.

Single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides as promising photocatalysts.

PubMed

Bai, Yujie; Luo, Gaixia; Meng, Lijuan; Zhang, Qinfang; Xu, Ning; Zhang, Haiyang; Wu, Xiuqiang; Kong, Fanjie; Wang, Baolin

2018-05-30

Searching for two-dimensional semiconductor materials that are suitable for visible-light photocatalytic water splitting provides a sustainable solution to deal with the future energy crisis and environmental problems. Herein, based on first-principles calculations, single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides are proposed as efficient photocatalysts for water splitting. Stability analyses show that the single-layer ZnMN2 zinc nitrides exhibit energetic and dynamical stability. The electronic properties reveal that all of the single-layer ZnMN2 zinc nitrides are semiconductors. Interestingly, single-layer ZnSnN2 is a direct band gap semiconductor with a desirable band gap (1.74 eV), and the optical adsorption spectrum confirms its optical absorption in the visible light region. The hydrogen evolution reaction (HER) calculations show that the catalytic activity for single-layer ZnMN2 (M = Ge, Sn) is better than that of single-layer ZnSiN2. Furthermore, the band gaps and band edge positions for the single-layer ZnMN2 zinc nitrides can be effectively tuned by biaxial strain. Especially, single-layer ZnGeN2 can be effectively tuned to match better with the redox potentials of water and enhance the light absorption in the visible light region at a tensile strain of 5%, which is confirmed by the corresponding optical absorption spectrum. Our results provide guidance for experimental synthesis efforts and future searches for single-layer materials suitable for photocatalytic water splitting.

Evaporation-based Ge/.sup.68 Ga Separation

DOEpatents

Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

1981-01-01

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Guo, Daoyou; Qin, Xinyuan; Lv, Ming; Shi, Haoze; Su, Yuanli; Yao, Guosheng; Wang, Shunli; Li, Chaorong; Li, Peigang; Tang, Weihua

2017-11-01

Highly (201) oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped β-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure β-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.[Figure not available: see fulltext.

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

NASA Astrophysics Data System (ADS)

Li, Ling; Zhang, Yuantao; Yan, Long; Jiang, Junyan; Han, Xu; Deng, Gaoqiang; Chi, Chen; Song, Junfeng

2016-12-01

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ˜396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ˜1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ˜3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures.

PubMed

Li, Guanghui; Suja, Mohammad; Chen, Mingguang; Bekyarova, Elena; Haddon, Robert C; Liu, Jianlin; Itkis, Mikhail E

2017-10-25

Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 10 3 , a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 10 5 due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron-phonon interactions leading to exciton formation. In this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10-20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron-hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.

Structural and optical characteristics of GaAs films grown on Si/Ge substrates

NASA Astrophysics Data System (ADS)

Rykov, A. V.; Dorokhin, M. V.; Vergeles, P. S.; Baidus, N. V.; Kovalskiy, V. A.; Yakimov, E. B.; Soltanovich, O. A.

2018-03-01

A GaAs/AlAs heterostructure and a GaAs film grown on Si/Ge substrates have been fabricated and studied. A Ge buffer on a silicon substrate was fabricated using the MBE process. A3B5 films were grown by MOCVD at low pressures. Photoluminescence spectroscopy was used to define the optical quality of A3B5 films. Structural properties were investigated using the electron beam induced current method. It was established that despite a rather high density of dislocations on the epitaxial layers, the detected photoluminescence radiation of layers indicates the acceptable crystalline quality of the top GaAs layer.

Structural and optical properties of the ZnS/GaSe heterojunctions

NASA Astrophysics Data System (ADS)

Alharbi, S. R.; Abdallaha, Maisam M. A.; Qasrawi, A. F.

2017-11-01

In the current work, the ZnS/GaSe thin film heterojunction interfaces are experimentally designed and characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersion spectroscopy and optical spectroscopy techniques. The heterojunction is observed to exhibit physical nature of formation with an induced crystallization of GaSe by the ZnS substrate. For this heterojunction, the hot probe technique suggested the formation of a p-ZnS/n-GaSe interface. In addition, the designed energy band diagram of the heterojunction which was actualized with the help of the optical spectrophotometric data analysis revealed a respective conduction and valence band offsets of 0.67 and 0.73 eV. On the other hand, the dielectric dispersion analysis and modeling which was studied in the frequency range of 270-1000 THz, have shown that the interfacing of the ZnS with GaSe strongly affects the properties of ZnS as it reduces the number of free carriers, shifts down the plasmon frequency, increases the charge carrier scattering time and results in higher values of drift mobility at Terahertz frequencies.

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Trybus, Elaissa; Cheung, Maurice C.; Doolittle, W. Alan; Cartwright, Alexander N.; Ferguson, Ian; Seong, Tae-Yeon; Nause, Jeff

2010-02-01

We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

PubMed Central

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-01-01

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively. PMID:28793675

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.

PubMed

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-11-16

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n -ZnO/ p -GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n -ZnO and p -GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n -ZnO and p -GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n -ZnO/ p -GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun

2010-07-15

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fittingmore » the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.« less

Trace element abundance determinations by Synchrotron X Ray Fluorescence (SXRF) on returned comet nucleus mineral grains

NASA Technical Reports Server (NTRS)

Flynn, G. J.; Sutton, S. R.

1989-01-01

Trace element analyses were performed on bulk cosmic dust particles by Proton Induced X Ray Emission (PIXE) and Synchrotron X Ray Fluorescence (SXRF). When present at or near chondritic abundances the trace elements K, Ti, Cr, Mn, Cu, Zn, Ga, Ge, Se, and Br are presently detectable by SXRF in particles of 20 micron diameter. Improvements to the SXRF analysis facility at the National Synchrotron Light Source presently underway should increase the range of detectable elements and permit the analysis of smaller samples. In addition the Advanced Photon Source will be commissioned at Argonne National Laboratory in 1995. This 7 to 8 GeV positron storage ring, specifically designed for high-energy undulator and wiggler insertion devices, will be an ideal source for an x ray microprobe with one micron spatial resolution and better than 100 ppb elemental sensitivity for most elements. Thus trace element analysis of individual micron-sized grains should be possible by the time of the comet nucleus sample return mission.

Electronic Band Structure Tuning of Highly-Mismatched-Alloys for Energy Conversion Applications

NASA Astrophysics Data System (ADS)

Ting, Min

Highly-mismatched alloys: ZnO1-xTe x and GaN1-xSb x are discussed within the context of finding the suitable material for a cost-effective Si-based tandem solar cell (SBTSC). SBTSC is an attractive concept for breaking through the energy conversion efficiency theoretical limit of a single junction solar cell. Combining with a material of 1.8 eV band gap, SBTSC can theoretically achieve energy conversion efficiency > 45%. ZnO and GaN are wide band gap semiconductors. Alloying Te in ZnO and alloying Sb in GaN result in large band gap reduction to < 2 eV from 3.3 eV and 3.4 eV respectively. The band gap reduction is majorly achieved by the upward shift of valence band (VB). Incorporating Te in ZnO modifies the VB of ZnO through the valence-band anticrossing (VBAC) interaction between localized Te states and ZnO VB delocalized states, which forms a Te-derived VB at 1 eV above the host VB. Similar band structure modification is resulted from alloying Sb in GaN. Zn1-xTex and GaN 1-xSbx thin films are synthesized across the whole composition range by pulsed laser deposition (PLD) and low temperature molecular beam epitaxy (LT-MBE) respectively. The electronic band edges of these alloys are measured by synchrotron X-ray absorption, emission, and the X-ray photoelectron spectroscopies. Modeling the optical absorption coefficient with the band anticrossing (BAC) model revealed that the Te and Sb defect levels to be at 0.99 eV and 1.2 eV above the VB of ZnO and GaN respectively. Electrically, Zn1-xTex is readily n-type conductive and GaN1-xSbx is strongly p-type conductive. A heterojunction device of p-type GaN 0.93Sb0.07 with n-type ZnO0.77Te0.93 upper cell (band gap at 1.8 eV) on Si bottom cell is proposed as a promising SBTSC device.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.

Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and shouldmore » be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.« less

Superconducting transition temperature in the Y(1-x)M(x)Ba2Cu3O(y) system

NASA Astrophysics Data System (ADS)

Suzuki, Takeyuki; Yamazaki, Tsutomu; Sekine, Ryuuta; Koukitsu, Akinori; Seki, Hisashi

1989-04-01

Experimental results are presented for the inclusion of compositional additives, M, to the sintered high-temperature superconductor Y(1-x)M(x)Ba2Cu3O(y); M can be the oxides of Mg, Ce, Gd, Yb, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, Sb, Bi, and Te, as well as Li, Na, K, Ca, Sr, and La carbonates. Temperature dependence of the electrical resistance was measured down to about 80 K. Attention is given to the influence of ionic radius and the valence of the M species.

Phase equilibria in the La–Mg–Ge system at 500 °C and crystal structure of the new ternary compounds La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Negri, S., E-mail: serena.denegri@unige.it; Solokha, P.; Skrobańska, M.

2014-10-15

The whole 500 °C isothermal section of the La–Mg–Ge ternary system was constructed. The existence and crystal structure of three ternary compounds were confirmed: La{sub 2+x}Mg{sub 1−x}Ge{sub 2} (τ{sub 2}, P4/mbm, tP10–Mo{sub 2}FeB{sub 2}, 0≤x≤0.25), La{sub 4}Mg{sub 5}Ge{sub 6} (τ{sub 3}, Cmc2{sub 1}, oS60–Gd{sub 4}Zn{sub 5}Ge{sub 6}) and La{sub 4}Mg{sub 7}Ge{sub 6} (τ{sub 4}, C2/m, mS34, own structure type). Five novel compounds were identified and structurally characterized: La{sub 11}Mg{sub 2}Ge{sub 7} (τ{sub 1}, P4{sub 2}/ncm, tP88-8, own structure type, a=1.21338(5), c=1.57802(6) nm), LaMg{sub 3−x}Ge{sub 2} (τ{sub 5}, P3{sup ¯}1c, hP34-0.44, own structure type, x=0.407(5), a=0.78408(4), c=1.45257(7) nm), La{sub 6}Mg{sub 23}Gemore » (τ{sub 6}, Fm3{sup ¯}m, cF120–Zr{sub 6}Zn{sub 23}Si, a=1.46694(6) nm), La{sub 4}MgGe{sub 10−x} (τ{sub 7}, x=0.37(1), C2/m, mS60-1.46, own structure type, a=0.88403(8), b=0.86756(8), c=1.7709(2) nm, β=97.16°(1) and La{sub 2}MgGe{sub 6} (τ{sub 8}, Cmce, oS72–Ce{sub 2}(Ga{sub 0.1}Ge{sub 0.9}){sub 7}, a=0.8989(2), b=0.8517(2), c=2.1064(3) nm). Disordering phenomena were revealed in several La–Mg–Ge phases in terms of partially occupied sites. The crystal structures of La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2} are discussed in details. The latter is a √3a×√3a×2c superstructure of the LaLi{sub 3}Sb{sub 2} structure type; the symmetry reduction scheme is shown in the Bärnighausen formalism terms. - Graphical abstract: La–Mg–Ge isothermal section at 500 °C and group–subgroup relation between the LaLi{sub 3}Sb{sub 2} (parent type) and LaMg{sub 3−x}Ge{sub 2} (derivative) structures. - Highlights: • Novel La−Mg−Ge compounds structure determination from X-ray single crystal data. • Disordering phenomena as common features of the studied germanides. • Bärnighausen formalism as a useful tool for accurate structure determination. • Full isothermal section of the La–Mg–Ge ternary system at 500 °C.« less

Effects of phase transformation on the microstructures and magnetostriction of Fe-Ga and Fe-Ga-Zn ferromagnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Lin, Yin-Chih; Lin, Chien-Feng

2015-05-01

The phase transformation and magnetostriction of bulk Fe73Ga27 and Fe73Ga18Zn9 (at. %) ferromagnetic shape memory alloys (FSMs) were investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD), and a magnetostrictive-meter setup. For the Fe73Ga27 FSM alloy solution treated at 1100 °C for 4 h and quenched in ice brine, the antiphase boundary segments of the D03 domain were observed in the A2 (disordered) matrix, and the Fe73Ga27 FSM alloy had an optimal magnetostriction (λ‖s = 71 × 10-6 and λ⊥s = -31 × 10-6). In Fe73Ga27 FSM alloy as-quenched, aged at 700 °C for 24 h, and furnace cooled, D03 nanoclusters underwent phase transformation to an intermediate tetragonal phase (i.e., L10-like martensite) via Bain distortion, and finally L12 (Fe3Ga) structures precipitated, as observed by TEM and XRD. The L10-like martensite and L12 phases in the aged Fe73Ga27 FSM alloy drastically decreased the magnetostriction from positive to negative (λ‖s = -20 × 10-6 and λ⊥s = -8 × 10-6). However, in Fe73Ga18Zn9 FSM alloy as-quenched and aged, the phase transformation of D03 to an intermediate tetragonal martensite phase and precipitation of L12 structures were not found. The results indicate that the aged Fe73Ga18Zn9 FSM alloy maintained stable magnetostriction (λ‖s = 36 × 10-6 and λ⊥s = -31 × 10-6). Adding Zn can improve the ferromagnetic shape memory effect of aged Fe73Ga18Zn9 alloy, which may be useful in application of the alloy in high temperature environments.

High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Longxing; Zhang, Quanlin; Chen, Mingming

2014-08-18

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diodemore » is potential for applications of portable UV detectors without driving power.« less

Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Ding, K.; Ullah, M. B.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2017-10-01

Zn-polar BeMgZnO/ZnO heterostructures grown by molecular beam epitaxy on high resistivity GaN templates producing high-density two-dimensional electron gas (2DEG) are investigated. This is motivated by the need to reach plasmon-longitudinal optical (LO) phonon resonance for attaining minimum LO phonon lifetime. Achievement of high 2DEG concentration in MgZnO/ZnO heterostructures requires growth of the MgZnO barrier at relatively low temperatures, which compromises the ternary quality that in turn hinders potential field effect transistor performance. When this ternary is alloyed further with BeO, the sign of strain in the BeMgZnO barrier on ZnO switches from compressive to tensile, making the piezoelectric and spontaneous polarizations to be additive in the BeMgZnO/ZnO heterostructures much like the Ga-polar AlGaN/GaN heterostructures. As a result, a 2DEG concentration of 1.2 × 1013 cm-2 is achieved in the Be0.03Mg0.41Zn0.56O/ZnO heterostructure. For comparison, a 2DEG concentration of 7.7 × 1012 cm-2 requires 2% Be and 26% Mg in the barrier, whereas the same in the MgZnO/ZnO system would require incorporation of more than 40% Mg into the barrier, which necessitates very low growth temperatures. Our results are consistent with the demands on achieving short LO phonon lifetimes through plasmon-LO phonon resonance for high carrier velocity.

Physical properties and spin excitations in the lacunar spinels AV4S8(A =Ga, Ge)

NASA Astrophysics Data System (ADS)

Pokharel, Ganesh; Christianson, Andrew; Mandrus, David; Liusuo Wu Team; Mark Lumsden Collaboration; Rupam Mukherjee Collaboration; Matthew Stone Collaboration; Georg Ehlers Collaboration

In the lacunar spinels AV4S8 (A = Ga, Ge), the interplay of spin, charge, and orbital degrees of freedom results in a complex phase diagram which includes: ferroelectric, orbitally ordered, and Néel type skyrmion phases. Below 12.7 K GaV4S8 exhibits cycloidal and ferromagnetic order and the application of a magnetic field results in a Néel type skyrmion spin structure. On the other hand, GeV4S8 orders antiferromagentically below 18 K. To illuminate the underlying physics driving the formation of these novel phases, we have measured the magnetization, resistivity, thermal conductivity, and inelastic neutron scattering spectrum of these spinels. The inelastic neutron scattering data shows broadened spin excitations which extend to 6 meV within the magnetically order phases for both GaV4S8 and GeV4S8. The similarity of the spectra for ferromagnetic GaV4S8 and antiferromagnetic GeV4S8 reflects the close balance of ferromagnetic and antiferromagnetic interactions in these materials. This research is funded by the Gordon and Betty Moore Foundation's EPIQS Initiative through Grant GBMF4416.

Characterization testing of MEASAT GaAs/Ge solar cell assemblies

NASA Technical Reports Server (NTRS)

Brown, Mike R.; Garcia, Curtis A.; Goodelle, George S.; Powe, Joseph S.; Schwartz, Joel A.

1996-01-01

The first commercial communications satellite with gallium-arsenide on germanium (GaAs/Ge) solar arrays is scheduled for launch in December 1995. The spacecraft, named MEASAT, was built by Hughes Space and Communications Company. The solar cell assemblies consisted of large area GaAs/Ge cells supplied by Spectrolab Inc. with infrared reflecting (IRR) coverglass supplied by Pilkington Space Technology. A comprehensive characterization program was performed on the GaAs/Ge solar cell assemblies used on the MEASAT array. This program served two functions; first to establish the database needed to accurately predict on-orbit performance under a variety of conditions; and second, to demonstrate the ability of the solar cell assemblies to withstand all mission environments while still providing the required power at end-of-life. Characterization testing included measurement of electrical performance parameters as a function of radiation exposure, temperature, and angle of incident light; reverse bias stability; optical and thermal properties; mechanical strength tests, panel fabrication, humidity and thermal cycling environmental tests. The results provided a complete database enabling the design of the MEASAT solar array, and demonstrated that the GaAs/Ge cells meet the spacecraft requirements at end-of-life.

Characterization testing of MEASAT GaAs/Ge solar cell assemblies

NASA Technical Reports Server (NTRS)

Brown, Mike R.; Garcia, Curtis A.; Goodelle, George S.; Powe, Joseph S.; Schwartz, Joel A.

1995-01-01

The first commercial communications satellite with gallium-arsenide on germanium (GaAs/Ge) solar arrays is scheduled for launch in December 1995. The spacecraft, named MEASAT, was built by hughes Space and Telecommunications company for Binariang Satellite Systems of Malaysia. The solar cell assemblies consisted of large area GaAs/Ge cells supplied by Spectrolab Inc. with infrared reflecting (IRR) coverglass supplied by Pilkington Space Technology. A comprehensive characterization program was performed on the GaAs/Ge solar cell assemblies used on the MEASAT array. This program served two functions; first to establish the database needed to accurately predict on-orbit performance under a variety of conditions; and second, to demonstrate the ability of the solar cell assemblies to withstand all mission environments while still providing the required power at end-of-life. characterization testing included measurement of electrical performance parameters as a function of radiation exposure, temperature, and angle of incident light; reverse bias stability; optical and thermal properties; mechanical strength tests, panel fabrication, humidity and thermal cycling environmental tests. The results provided a complete database enabling the design of the MEASAT solar array, and demonstrated that the GaAs/Ge cells meet the spacecraft requirements at end-of-life.

The ZnSe(110) puzzle - Comparison with GaAs(110)

NASA Technical Reports Server (NTRS)

Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

1984-01-01

The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

The role of proline-containing peptide triads in β-sheet formation: A kinetic study.

PubMed

Takor, Gaius A; Higashiya, Seiichiro; Sikirzhytski, Vitali K; Seeley, Jason P; Lednev, Igor K; Welch, John T

2015-06-01

The design of biomimetic materials through molecular self-assembly is a growing area of modern nanotechnology. With problems of protein folding, self-assembly, and sequence-structure relationships as essential in nanotechnology as in biology, the effect of the nucleation of β-hairpin formation by proline on the folding process has been investigated in model studies. Previously such studies were limited to investigations of the influence of proline on the formation of turns in short peptide sequences. The effect of proline-based triads on the folding of an 11-kDa amyloidogenic peptide GH6[(GA)3GY(GA)3GE]8 GAH6 (YE8) was investigated by selective substitution of the proline-substituted triads at the γ-turn sites. The folding and fibrillation of the singly proline-substituted polypeptides, e.g., GH6-[(GA)3GY(GA)3GE]7(GA)3GY(GA)3PD-GAH6 (8PD), and doubly proline-substituted polypeptides, e.g., GH6-[(GA)3GY(GA)3GE]3(GA)3GY(GA)3PD[(GA)3GY(GA)3GE]3(GA)3GY(GA)3PD-GAH6 (4,8PD), were directly monitored by circular dichroism and deep UV resonance Raman and fluorescence spectroscopies. These findings were used to identify the essential folding domains, i.e., the minimum number of β-strands necessary for stable folding. These experimental findings may be especially useful in the design and construction of peptidic materials for a wide range of applications as well as in understanding the mechanisms of folding critical to fibril formation. © 2015 Wiley Periodicals, Inc.

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.

PubMed

Abbasi, Mazhar Ali; Ibupoto, Zafar Hussain; Hussain, Mushtaque; Nur, Omer; Willander, Magnus

2013-07-13

Cheap and efficient white light-emitting diodes (LEDs) are of great interest due to the energy crisis all over the world. Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission. Scanning electron microscopy have well demonstrated the arrays of the ZnO nanorods and the proper etching into the nanotubes. X-ray diffraction study describes the wurtzite crystal structure array of ZnO nanorods with the involvement of GaN at the (002) peak. The cathodoluminescence spectra represent strong and broad visible emission peaks compared to the UV emission and a weak peak at 425 nm which is originated from GaN. Electroluminescence study has shown highly improved luminescence response for the LEDs fabricated with NiO buffer layer compared to that without NiO layer. Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN. Moreover, the presence of NiO buffer layer might create the confinement effect.

Materials Design of the Codoping for the Fabrication of Low-Resistivity p-Type ZnSe and GaN by ab-initio Electronic Structure Calculation

NASA Astrophysics Data System (ADS)

Katayama-Yoshida, H.; Yamamoto, T.

1997-08-01

We propose an effective doping method, the codoping (doping with n- and p-type dopants at the same time) method, for the fabrication of low-resistivity p-type ZnSe and GaN with wide-band-gap based upon ab-initio electronic band structure calculations. p-type doping eminently leads to an increase in the electrostatic energy, called the Madelung energy, which shifts the Se 4p levels for p-type doped ZnSe and the N 2p levels for p-type doped GaN materials towards higher energy regions. This leads to a destabilization of ionic charge distributions in p-type ZnSe and p-type GaN crystals, resulting in the self-compensation of anion intrinsic defects. For ZnSe crystals, we propose the codoping of n-type In donors at Zn sites and p-type N acceptors at Se sites based on the calculation. In addition, we propose the codoping of n-type Si-donors at Ga sites (n-type O donors at N sites) and p-type Be- or Mg acceptors at Ga sites. The codoping decreases the Madelung energy and leads to an increase in the net acceptor carrier density.

In(1-x)Ga(x)N@ZnO: a rationally designed and quantum dot integrated material for water splitting and solar harvesting applications.

PubMed

Rajaambal, Sivaraman; Mapa, Maitri; Gopinath, Chinnakonda S

2014-09-07

The highly desirable combination of the visible light absorption properties of In1-xGaxN Quantum dots (QD) along with the multifunctionality of ZnO into a single integrated material was prepared for solar harvesting. This is the first report on InGaN QD integrated with ZnO (InGaN@ZnO), synthesized by a highly reproducible, simple combustion method in 15 min. Structural, microstructural and electronic integration of the nitride and oxide components of InGaN@ZnO was demonstrated by appropriate characterization methods. Self-assembly of InGaN QD is induced in growing nascent zinc oxo nanoclusters taking advantage of the common wurtzite structure and nitrogen incorporation at the expense of oxygen vacancies. Direct integration brings about a single phase structure exhibiting extensive visible light absorption and high photostability. InGaN@ZnO suggests synergistic operation of light harvesting and charge conducting components for solar H2 generation without using any co-catalyst or sacrificial agent, and a promising photocurrent generation at 0 V under visible light illumination. The present study suggests a direct integration of QD with the host matrix and is a potential method to realize the advantages of QDs.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

PubMed

Du, Chia-Fong; Lee, Chen-Hui; Cheng, Chao-Tsung; Lin, Kai-Hsiang; Sheu, Jin-Kong; Hsu, Hsu-Cheng

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

2014-11-01

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chin, Hock-Chun; Gong, Xiao; Yeo, Yee-Chia

Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAsmore » grown and the high growth selectivity of the MEE process.« less

A Zn isotope perspective on the rise of continents.

PubMed

Pons, M-L; Fujii, T; Rosing, M; Quitté, G; Télouk, P; Albarède, F

2013-05-01

Zinc isotope abundances are fairly constant in igneous rocks and shales and are left unfractionated by hydrothermal processes at pH < 5.5. For that reason, Zn isotopes in sediments can be used to trace the changing chemistry of the hydrosphere. Here, we report Zn isotope compositions in Fe oxides from banded iron formations (BIFs) and iron formations of different ages. Zinc from early Archean samples is isotopically indistinguishable from the igneous average (δ(66) Zn ~0.3‰). At 2.9-2.7 Ga, δ(66) Zn becomes isotopically light (δ(66) Zn < 0‰) and then bounces back to values >1‰ during the ~2.35 Ga Great Oxygenation Event. By 1.8 Ga, BIF δ(66) Zn has settled to the modern value of FeMn nodules and encrustations (~0.9‰). The Zn cycle is largely controlled by two different mechanisms: Zn makes strong complexes with phosphates, and phosphates in turn are strongly adsorbed by Fe hydroxides. We therefore review the evidence that the surface geochemical cycles of Zn and P are closely related. The Zn isotope record echoes Sr isotope evidence, suggesting that erosion starts with the very large continental masses appearing at ~2.7 Ga. The lack of Zn fractionation in pre-2.9 Ga BIFs is argued to reflect the paucity of permanent subaerial continental exposure and consequently the insignificant phosphate input to the oceans and the small output of biochemical sediments. We link the early decline of δ(66) Zn between 3.0 and 2.7 Ga with the low solubility of phosphate in alkaline groundwater. The development of photosynthetic activity at the surface of the newly exposed continents increased the oxygen level in the atmosphere, which in turn triggered acid drainage and stepped up P dissolution and liberation of heavy Zn into the runoff. Zinc isotopes provide a new perspective on the rise of continents, the volume of carbonates on continents, changing weathering conditions, and compositions of the ocean through time. © 2013 Blackwell Publishing Ltd.

Nuclear Data Sheets for A = 80

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Balraj

Nuclear spectroscopic information for known nuclides of mass number 80 (Cu,Zn,Ga,Ge,As,Se,Br,Kr,Rb,Sr,Y,Zr) with Z = 29 to 40 and N = 51 to 40 have been evaluated and presented together with adopted energies and J{pi} of levels in these nuclei. No excited state data are yet available for {sup 80}Cu and {sup 80}Zn. In {sup 80}Sr, four superdeformed bands have been reported. The half-life of fully-ionized {sup 80}Y isomer at 228.5 keV has been measured as 6.8 s 5, as compared to 4.8 s 3 for the neutral atom. This evaluation supersedes previous full evaluations of A = 80 published bymore » 1982Si20 and 1975Gr19, a midstream evaluation of A = 80 published in 'up-date mode' by 1992Si19, and an update of {sup 80}Y nuclide for ENSDF by J.K. Tuli in August 2003.« less

Renierite, Cu10ZnGe2Fe4S16-Cu11GeAsFe4S16: a coupled solid solution series.

USGS Publications Warehouse

Bernstein, L.R.

1986-01-01

The composition of renierite is found to be Cu10(Zn1-xCux)Ge2-xAsxFe4S16 (0 = or < x = or < 1), with continuous solid solution between the zincian and arsenian end-members, Cu10ZnGe2Fe4S16 and Cu11GeAsFe4S16, through the coupled substitution Zn(II) + Ge(IV) = Cu(I) + As(V). This is the first reported example of extensive coupled solid solution in a sulphide mineral. Arsenian renierite, not previously characterized, is similar to zincian renierite in polished section, with a slightly redder colour and lower anisotropy. It is reddish orange with relief very similar to that of bornite, though it is harder (VHN25 = 286) and does not tarnish in air. It is slightly bireflective, with colours varying from orange-yellow to reddish orange in nearly crossed polarizers. The strongest powder XRD lines are: 3.042(100), 1.861(29), 1.869(16), 1.594(11) and 1.017(10) A; D(calc.) 4.50 g/cm3. Specimens have been found at the Ruby Creek copper deposit, Alaska, where zincian renierite also occurs, and at the Inexco no. 1 mine, Jamestown, Colorado.-J.A.Z.

Synthesis and first-principle calculations of the structural and electronic properties of Ge-substituted type-VIII Ba8Ga16Sn30 clathrate

NASA Astrophysics Data System (ADS)

Shen, Lanxian; Li, Decong; Liu, Hongxia; Liu, Zuming; Deng, Shukang

2016-12-01

In this study, the structural and electronic structural properties of Ba8Ga16Sn30-xGex (0≤x≤30) are determined by the first-principle method on the basis of density functional theory. Consistent with experimental findings, calculated results reveal that Ge atoms preferentially occupy the 2a and 24g sites in these compounds. As the content of Ge in Ge-substituted clathrate is increased, the lattice parameter is decreased, and the structural stability is enhanced. The bandgaps of the compound at 1≤x≤10 are smaller than those of Ba8Ga16Sn30. By contrast, the bandgaps of the compound at x>10 are larger than those of Ba8Ga16Sn30. The substitution of Ge for Sn affects p-type conductivity but not n-type conductivity. As Ge content increases, the whole conduction band moves to the direction of high energy, and the density of states of valence-band top decreases. The calculated potential energy versus displacement of Ba indicates that the vibration energy of this atom increases as cage size decreases. Because Ge substitution also affects clathrate structural symmetry, the distance of Ba atom deviation from the center of the cage initially increases and subsequently decreases as the Ge content increases.

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs, and we investigate the n-ZnO/p-GaN interface. We show that ZnO has potential as an effective p-contact for these devices, and determine properties that still need improvement in order for ZnO to compete with other contact materials. We also compare the device performance to metal-contacted devices. In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.

Organ biodistribution of Germanium-68 in rat in the presence and absence of [68Ga]Ga-DOTA-TOC for the extrapolation to the human organ and whole-body radiation dosimetry

PubMed Central

Velikyan, Irina; Antoni, Gunnar; Sörensen, Jens; Estrada, Sergio

2013-01-01

Positron Emission Tomography (PET) and in particular gallium-68 (68Ga) applications are growing exponentially worldwide contributing to the expansion of nuclear medicine and personalized management of patients. The significance of 68Ga utility is reflected in the implementation of European Pharmacopoeia monographs. However, there is one crucial point in the monographs that might limit the use of the generators and consequently expansion of 68Ga applications and that is the limit of 0.001% of Germanium-68 (68Ge(IV)) radioactivity content in a radiopharmaceutical. We have investigated the organ distribution of 68Ge(IV) in rat and estimated human dosimetry parameters in order to provide experimental evidence for the determination and justification of the 68Ge(IV) limit. Male and female rats were injected in the tail vein with formulated [68Ge]GeCl4 in the absence or presence of [68Ga]Ga-DOTA-TOC. The tissue radioactivity distribution data was extrapolated for the estimation of human organ equivalent doses and total effective dose using Organ Level Internal Dose Assessment Code software (OLINDA/EXM). 68Ge(IV) was evenly distributed among the rat organs and fast renal excretion prevailed. Human organ equivalent dose and total effective dose estimates indicated that the kidneys were the dose-limiting organs (185±54 μSv/MBq for female and 171±38 μSv/MBq for male) and the total effective dose was 15.5±0.1 and 10.7±1.2 μSv/MBq, respectively for female and male. The results of this dosimetry study conclude that the 68Ge(IV) limit currently recommended by monographs could be increased considerably (>100 times) without exposing the patient to harm given the small absorbed doses to normal organs and fast excretion. PMID:23526484

Alignment of Ge nanoislands on Si(111) by Ga-induced substrate self-patterning.

PubMed

Schmidt, Th; Flege, J I; Gangopadhyay, S; Clausen, T; Locatelli, A; Heun, S; Falta, J

2007-02-09

A novel mechanism is described which enables the selective formation of three-dimensional Ge islands. Submonolayer adsorption of Ga on Si(111) at high temperature leads to a self-organized two-dimensional pattern formation by separation of the 7 x 7 substrate and Ga/Si(111)-(square root[3] x square root[3])-R30 degrees domains. The latter evolve at step edges and domain boundaries of the initial substrate reconstruction. Subsequent Ge deposition results in the growth of 3D islands which are aligned at the boundaries between bare and Ga-covered domains. This result is explained in terms of preferential nucleation conditions due to a modulation of the surface chemical potential.

The 76Ge(n,p)76Ga reaction and its relevance to searches for the neutrino-less double-beta decay of 76Ge

NASA Astrophysics Data System (ADS)

Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan, Fnu

2015-10-01

The 76Ge(n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.9 keV state of 76Ge, which decays by emission of a 2040.7 keV γ ray. Using HPGe detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrino-less double-beta decay of 76Ge with its Q-value of 2039.0 keV. In the neutron energy range between 10 and 20 MeV the production cross section of the 2040.7 keV γ ray is approximately 0.1 mb. In the same experiment γ rays of energy 2037.9 keV resulting from the 76Ge(n, γ)77Ge reaction were clearly observed. Adding the 76Ge(n,n' γ)76Ge reaction, which also produces the 2040.7 keV γ ray with a cross section value of the order of 0.1 mb clearly shows that great care has to be taken to eliminate neutron-induced backgrounds in searches for neutrino-less double-beta decay of 76Ge. This work was supported by the U.S. DOE under Grant NO. DE-FG02-97ER41033.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

NASA Astrophysics Data System (ADS)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru

2015-02-15

A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

Special quasiordered structures: Role of short-range order in the semiconductor alloy (GaN) 1 -x(ZnO) x

NASA Astrophysics Data System (ADS)

Liu, Jian; Fernández-Serra, Maria V.; Allen, Philip B.

2016-02-01

This paper studies short-range order (SRO) in the semiconductor alloy (GaN) 1 -x(ZnO) x. Monte Carlo simulations performed on a density functional theory (DFT)-based cluster expansion model show that the heterovalent alloys exhibit strong SRO because of the energetic preference for the valence-matched nearest-neighbor Ga-N and Zn-O pairs. To represent the SRO-related structural correlations, we introduce the concept of special quasiordered structure (SQoS). Subsequent DFT calculations reveal the dramatic influence of SRO on the atomic, electronic, and vibrational properties of the (GaN) 1 -x(ZnO) x alloy. Due to the enhanced statistical presence of the energetically unfavored Zn-N bonds with the strong Zn 3 d -N 2 p repulsion, the disordered alloys exhibit much larger lattice bowing and band-gap reduction than those of the short-range ordered alloys. Lattice vibrational entropy tilts the alloy toward less SRO.

p-GaN/n-ZnO heterojunction nanowires: optoelectronic properties and the role of interface polarity.

PubMed

Schuster, Fabian; Laumer, Bernhard; Zamani, Reza R; Magén, Cesar; Morante, Joan Ramon; Arbiol, Jordi; Stutzmann, Martin

2014-05-27

In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface are presented. In contrast to homojunctions, an additional energy barrier due to the type-II band alignment hinders the flow of majority charge carriers in this heterojunction. Spontaneous polarization and piezoelectricity are shown to additionally affect the band structure and the location of the recombination region. Proposed as potential UV-LEDs and laser diodes, p-GaN/n-ZnO heterojunction nanowires were fabricated by plasma-assisted molecular beam epitaxy (PAMBE). Atomic resolution annular bright field scanning transmission electron microscopy (STEM) studies reveal an abrupt and defect-free heterointerface with a polarity inversion from N-polar GaN to Zn-polar ZnO. Photoluminescence measurements show strong excitonic UV emission originating from the ZnO-side of the interface as well as stimulated emission in the case of optical pumping above a threshold of 55 kW/cm(2).

Electronic materials with a wide band gap: recent developments

PubMed Central

Klimm, Detlef

2014-01-01

The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity. PMID:25295170

Toward a III-V Multijunction Space Cell Technology on Si

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

2007-01-01

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells with Graphene Quantum Dots

PubMed Central

Lin, Tzu-Neng; Santiago, Svette Reina Merden S.; Zheng, Jie-An; Chao, Yu-Chiang; Yuan, Chi-Tsu; Shen, Ji-Lin; Wu, Chih-Hung; Lin, Cheng- An J.; Liu, Wei-Ren; Cheng, Ming-Chiang; Chou, Wu-Ching

2016-01-01

Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the InGaP top subcell. PMID:27982073

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET).

PubMed

Seo, Jae Hwa; Yoon, Young Jun; Kang, In Man

2018-09-01

The Ge/GaAs-based heterojunction gate-all-around (GAA) arch-shaped tunneling field-effect transistor (A-TFET) have been designed and optimized using technology computer-aided design (TCAD) simulations. In our previous work, the silicon-based A-TFET was designed and demonstrated. However, to progress the electrical characteristics of A-TFET, the III-V compound heterojunction structures which has enhanced electrical properties must be adopted. Thus, the germanium with gallium arsenide (Ge/GaAs) is considered as key materials of A-TFET. The proposed device has a Ge-based p-doped source, GaAs-based i-doped channel and GaAs-based n-doped drain. Due to the critical issues of device performances, the doping concentration of source and channel region (Dsource, Dchannel), height of source region (Hsource) and epitaxially grown thickness of channel (tepi) was selected as design optimization variables of Ge/GaAs-based GAA A-TFET. The DC characteristics such as on-state current (ion), off-state current (ioff), subthreshold-swing (S) were of extracted and analyzed. Finally, the proposed device has a gate length (LG) of 90 nm, Dsource 5 × 1019 cm-3, Dchannel of 1018 cm-3, tepi of 4 nm, Hsource of 90 nm, R of 10 nm and demonstrate an ion of 2 mA/μm, S of 12.9 mV/dec.

Mid-infrared source with 0.2 J pulse energy based on nonlinear conversion of Q-switched pulses in ZnGeP2.

PubMed

Haakestad, Magnus W; Fonnum, Helge; Lippert, Espen

2014-04-07

Mid-infrared (3-5 μm) pulses with high energy are produced using nonlinear conversion in a ZnGeP(2)-based master oscillator-power amplifier, pumped by a Q-switched cryogenic Ho:YLF oscillator. The master oscillator is based on an optical parametric oscillator with a V-shaped 3-mirror ring resonator, and the power amplifier is based on optical parametric amplification in large-aperture ZnGeP(2) crystals. Pulses with up to 212 mJ energy at 1 Hz repetition rate are obtained, with FWHM duration 15 ns and beam quality M(2) = 3.

ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

2012-07-01

We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.

Growth and characterization of single crystalline Zn0.8-xMg0.2AlxO films with UV band gap on GaN/Al2O3 template by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, Min-Sung; Lee, Byung-Teak

2013-02-01

Single crystalline Zn0.8-xMg0.2AlxO thin films were grown on a GaN/Al2O3 template. As the Al content is increased from 0 to 0.06, the optical band gap increased from 3.6 eV to 4.0 eV, growth rate decreased from 6 nm/min to 3 nm/min, and the surface roughness decreased from 17 nm to 0.8 nm. It was observed that interfacial layers were formed between the thin films and the substrates, identified as cubic MgAl2O4 in the case of ZnMgAlO/GaN and cubic MgO in the case of ZnMgO/GaN. It was proposed that the MgAl2O4 layer, with low lattice mismatch of ˜7% against the GaN substrate, acted as the buffer layer to correlate the film and the substrate, resulting in growth of the single crystalline thin films in the case of the ZnMgAlO/GaN system.

LEED and AES characterization of the GaAs(110)-ZnSe interface

NASA Technical Reports Server (NTRS)

Tu, D.-W.; Kahn, A.

1984-01-01

In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

Energy band-gap calculations of short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices

NASA Astrophysics Data System (ADS)

Wu, Yi-hong; Fujita, Shizuo; Fujita, Shigeo

1990-01-01

We report on the calculations of energy band gaps based on the semiempirical tight-binding model for short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices (SLSs). During the calculation, much attention has been paid to the modeling of strain effect. It is found that (ZnTe)m(ZnSe)n superlattices grown on InAs, InP, and GaAs substrates show very different electronic properties from each other, which is consistent with experimental results now available. Assuming that the emission observed for (ZnTe)m(ZnSe)n SLS originates from intrinsic luminescence, we obtain an unstrained valence-band offset of 1.136±0.1 eV for this superlattice. On the other hand, the band gap of (ZnS)m(ZnSe)n superlattice grown coherently on GaP is found to exhibit a much stronger structure dependence than that grown coherently on GaAs. The difference of energy gap between superlattice with equal monolayers (m=n) and the corresponding alloy with equal chalcogenide composition is also discussed.

A convenient route to [68Ga]Ga-MAA for use as a particulate PET perfusion tracer.

PubMed

Mathias, Carla J; Green, Mark A

2008-12-01

A convenient method is described for compounding [(68)Ga]Ga-MAA (MAA=macroaggregated human serum albumin) with the eluate of a commercially available TiO(2)-based (68)Ge/(68)Ga generator. The final [(68)Ga]Ga-MAA product was obtained with an 81.6+/-5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8+/-0.1% (n=5). Microscopic examination showed the [(68)Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [(68)Ga]Ga-MAA suspension, could be completed in 25 min. Only 4.4+/-0.9% of the total (68)Ge breakthrough remaining associated with the final [(68)Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [(68)Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use.

Characteristics of SnO2-based 68Ge/68Ga generator and aspects of radiolabelling DOTA-peptides.

PubMed

de Blois, Erik; Sze Chan, Ho; Naidoo, Clive; Prince, Deidre; Krenning, Eric P; Breeman, Wouter A P

2011-02-01

PET scintigraphy with (68)Ga-labelled analogs is of increasing interest in Nuclear Medicine and performed all over the world. Here we report the characteristics of the eluate of SnO(2)-based (68)Ge/(68)Ga generators prepared by iThemba LABS (Somerset West, South Africa). Three purification and concentration techniques of the eluate for labelling DOTA-TATE and concordant SPE purifications were investigated. Characteristics of 4 SnO(2)-based generators (range 0.4-1 GBq (68)Ga in the eluate) and several concentration techniques of the eluate (HCl) were evaluated. The elution profiles of SnO(2)-based (68)Ge/(68)Ga generators were monitored, while [HCl] of the eluens was varied from 0.3-1.0 M. Metal ions and sterility of the eluate were determined by ICP. Fractionated elution and concentration of the (68)Ga eluate were performed using anion and cation exchange. Concentrated (68)Ga eluate, using all three concentration techniques, was used for labelling of DOTA-TATE. (68)Ga-DOTA-TATE-containing solution was purified and RNP increased by SPE, therefore also 11 commercially available SPE columns were investigated. The amount of elutable (68)Ga activity varies when the concentration of the eluens, HCl, was varied, while (68)Ge activity remains virtually constant. SnO(2)-based (68)Ge/(68)Ga generator elutes at 0.6 M HCl >100% of the (68)Ga activity at calibration time and ±75% after 300 days. Eluate at discharge was sterile and Endotoxins were <0.5 EU/mL, RNP was always <0.01%. Metal ions in the eluate were <10 ppm (in total). Highest desorption for anion purification was obtained with the 30 mg Oasis WAX column (>80%). Highest desorption for cation purification was obtained using a solution containing 90% acetone at increasing molarity of HCl, resulted in a (68)Ga desorption of 68±8%. With all (68)Ge/(68)Ga generators and for all 3 purification methods a SA up to 50 MBq/nmol with >95% incorporation (ITLC) and RCP (radiochemical purity) by HPLC ±90% could be achieved. Purification and concentration of the eluate with anion exchange has the benefit of more elutable (68)Ga with 1 M HCl as eluens. The additional washing step of the anion column with NaCl and ethanol, resulted in a lower and less variable [H(+)] in the eluate, and, as a result the pH in the reaction vial is better controlled, more constant, and less addition of buffer is required and concordant smaller reaction volumes. Desorption of (68)Ga-DOTA-TATE of SPE columns varied, highest desorption was obtained with Baker C(18) 100 mg (84%). Purification of (68)Ga-DOTA-TATE by SPE resulted in an RNP of <10(-4)%. Eluate of SnO(2)-based (68)Ge/(68)Ga generator, either by fractionated elution as by ion exchange can be used for labelling DOTA-peptides with (68)Ga at a SA of 50 MBq/nmol at >95% incorporation and a RCP of ±90%. SPE columns are very effective to increase RNP. Copyright © 2010 Elsevier Ltd. All rights reserved.

Effects of ageing on the electrical characteristics of Zn/ZnS/n-GaAs/In structure

NASA Astrophysics Data System (ADS)

Güzeldir, B.; Sağlam, M.

2016-04-01

Zn/ZnS/n-GaAs/In structure has been fabricated by the Successive Ionic Layer Adsorption and Reaction (SILAR) method and the influence of the time dependent or ageing on the characteristic parameters are examined. The current-voltage (I-V) of the structure have been measured immediately, 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 and 165 days after fabrication of this structure. The characteristics parameters of this structure such as barrier height, ideality factor, series resistance are calculated from the I-V measurements. It has been seen that the changes of characteristic parameters such as barrier height, ideality factor and series resistance of Zn/ZnS/n-GaAs/In structure have lightly changed with increasing ageing time.

Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

NASA Astrophysics Data System (ADS)

Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu

2013-04-01

We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

PubMed Central

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO. PMID:25232299

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhifeng; Zhang, Yuantao, E-mail: zhangyt@jlu.edu.cn; Cui, Xijun

2014-03-31

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film.

PubMed

Tetsuyama, Norihiro; Fusazaki, Koshi; Mizokami, Yasuaki; Shimogaki, Tetsuya; Higashihata, Mitsuhiro; Nakamura, Daisuke; Okada, Tatsuo

2014-04-21

We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.

Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Chen, Cheng-Yu; Hsiao, Li-Han; Chyi, Jen-Inn

2015-09-01

In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Wang, K. L.; Zwerdling, S.

1982-01-01

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wei; D'Costa, Vijay Richard; Dong, Yuan

2016-03-28

Ge{sub 0.94}Sn{sub 0.06} films with high tensile strain were grown on strain-relaxed In{sub y}Ga{sub 1−y}P virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge{sub 0.94}Sn{sub 0.06} film was varied by changing the In mole fraction in In{sub x}Ga{sub 1−x}P buffer layer. The tensile strained Ge{sub 0.94}Sn{sub 0.06} films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge{sub 0.94}Sn{sub 0.06} was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was notmore » relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge{sub 0.94}Sn{sub 0.06} on In{sub 0.77}Ga{sub 0.23}P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge{sub 0.94}Sn{sub 0.06}/In{sub 0.77}Ga{sub 0.23}P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.« less

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

NASA Astrophysics Data System (ADS)

Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

2017-11-01

The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

Fast-Timing Study in the 78Ni Region: β-Decay of 81Zn

NASA Astrophysics Data System (ADS)

Paziy, V.; Mach, H.; Fraile, L. M.; Aprahamian, A.; Bernards, C.; Briz, J. A.; Bucher, B.; Chiara, C. J.; Dlouhý, Z.; Gheorghe, I.; Ghiţă, D.; Hoff, P.; Jolie, J.; Köster, U.; Kurcewicz, W.; Lică, R.; Mărginean, N.; Mărginean, R.; Olaizola, B.; Régis, J.-M.; Rudigier, M.; Sava, T.; Simpson, G. S.; Stănoiu, M.; Stroe, L.; Udías, J. M.; Walters, W. B.

The neutron-rich nucleus 81Ga was populated from the β-decay of 81Zn produced at the ISOLDE (CERN) facility. The analysis of β-gated γ-ray singles and γ-γ coincidences permits to extend significantly the level scheme of 81Ga as well as to provide a new half-life for 81Zn. A preliminary upper limit was obtained for the half-life of the first excited state in 81Ga.

Effect of Dielectric Material Films on Crystallization Characteristics of Ge2Sb2Te5 Phase-Change Memory Film

NASA Astrophysics Data System (ADS)

Nishiuchi, Kenichi; Yamada, Noboru; Kawahara, Katsumi; Kojima, Rie

2007-11-01

Reduction of the film thickness of phase-change film and the adoption of GeN- or ZrO2-based dielectric films are both effective in achieving good thermal stability in phase-change optical disks. It was experimentally confirmed that, at a heating rate of 10 °C/min, the crystallization temperature Tx of the Ge2Sb2Te5 amorphous film when sandwiched by ZnS-SiO2 films markedly increases from 162 to 197 °C, while the thickness of the Ge2Sb2Te5 film decreases from 10 to 3 nm. Tx also slightly increases when ZnS-SiO2 films are substituted for GeN-based films (from 162 to 165 °C) and ZrO2-based films (from 162 to 167 °C). At the same time, the activation energy of crystallization is 2.4 eV for both GeN- and ZrO2-based films, and is higher than 2.2 eV for ZnS-SiO2 films.

Ultra-low specific contact resistivity (1.4 × 10-9 Ω.cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

NASA Astrophysics Data System (ADS)

Wu, Ying; Luo, Sheng; Wang, Wei; Masudy-Panah, Saeid; Lei, Dian; Liang, Gengchiau; Gong, Xiao; Yeo, Yee-Chia

2017-12-01

A heavily Ga-doped Ge0.95Sn0.05 layer was grown on the Ge (100) substrate by molecular beam epitaxy (MBE), achieving an active doping concentration of 1.6 × 1020 cm-3 without the use of ion implantation and high temperature annealing that could cause Sn precipitation or surface segregation. An advanced nano-scale transfer length method was used to extract the specific contact resistivity ρc between the metal and the heavily doped p-Ge0.95Sn0.05 layer. By incorporating Sn into Ge and in-situ Ga doping during the MBE growth, an ultra-low ρc of 1.4 × 10-9 Ω.cm2 was achieved, which is 50% lower than the ρc of p+-Ge control and is also the lowest value obtained for metal/p-type semiconductor contacts.

Heteroepitaxial growth of Ge films on (100) GaAs by pyrolysis of digermane

NASA Astrophysics Data System (ADS)

Eres, Djula; Lowndes, Douglas H.; Tischler, J. Z.; Sharp, J. W.; Geohegan, D. B.; Pennycook, S. J.

1989-08-01

Pyrolysis of high-purity digermane (Ge2 H6 ) has been used to grow epitaxial Ge films of high crystalline quality on (100) GaAs substrates in a low-pressure environment. X-ray double-crystal diffractometry shows that fully commensurate, coherently strained epitaxial Ge films can be grown on (100) GaAs at digermane partial pressures of 0.05-40 mTorr for substrate temperatures of 380-600 °C. Amorphous films also were deposited. Information about the crystalline films surface morphology, growth mode, and microstructure was obtained from scanning electron microscopy, cross-section transmission electron microscopy, and in situ reflectivity measurements. The amorphous-to-crystalline transition temperature and the morphology of the crystalline films were both found to depend on deposition conditions (primarily the incidence rate of Ge-bearing species and the substrate temperature). Epitaxial growth rates using digermane were found to be about two orders of magnitude higher than rates using germane (GeH4 ) under similar experimental conditions.

Stressed Ge:Ga photoconductors for space-based astronomy. (Is there life beyond 120 micron)

NASA Technical Reports Server (NTRS)

Beeman, J. W.; Haller, E. E.; Hansen, W. L.; Luke, P. N.; Richards, P. L.

1989-01-01

Information is given in viewgraph form. Information is given on the characteristics of stressed Ge:Ga, a spring type stress cavity, mounting hardware, materials parameters affecting dark current, and the behavior of low dark current stressed Ge:Ga. It is concluded that detectors exist today for background-limited detection at 200 microns, that researchers are narrowing in on the significant parameters that effect dark current in stressed photoconductors, that these findings may be applied to other photoconductor materials, and that some creative problem solving for an ionizing effect reset mechanism is needed.

Pharmacokinetics and tissue distribution of five active ingredients of Eucommiae cortex in normal and ovariectomized mice by UHPLC-MS/MS.

PubMed

An, Jing; Hu, Fangdi; Wang, Changhong; Zhang, Zijia; Yang, Li; Wang, Zhengtao

2016-09-01

1. Pinoresinol di-O-β-d-glucopyranoside (PDG), geniposide (GE), geniposidic acid (GA), aucubin (AN) and chlorogenic acid (CA) are the representative active ingredients in Eucommiae cortex (EC), which may be estrogenic. 2. The ultra high-performance liquid chromatography/tandem mass spectrometry (UHPLC-MS/MS) method for simultaneous determination of the five ingredients showed good linearity, low limits of quantification and high extraction recoveries, as well as acceptable precision, accuracy and stability in mice plasma and tissue samples (liver, spleen, kidney and uterus). It was successfully applied to the comparative study on pharmacokinetics and tissue distribution of PDG, GE, GA, AN and CA between normal and ovariectomized (OVX) mice. 3. The results indicated that except CA, the plasma and tissue concentrations of PDG, GE, GA in OVX mice were all greater than those in normal mice. AN could only be detected in the plasma and liver homogenate of normal mice, which was poorly absorbed in OVX mice and low in other measured tissues. PDG, GE and GA seem to be better absorbed in OVX mice than in normal mice proved by the remarkable increased value of AUC0-∞ and Cmax. It is beneficial that PDG, GE, GA have better plasma absorption and tissue distribution in pathological state.

Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

NASA Astrophysics Data System (ADS)

Li Lam, Mui; Hafiz Abu Bakar, Muhammad; Lam, Wai Yip; Alias, Afishah; Rahman, Abu Bakar Abd; Anuar Mohamad, Khairul; Uesugi, Katsuhiro

2017-11-01

In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34° while CuGaO2 (015) peak is not visible at 44°. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.

Cu2ZnGeS4 thin films deposited by thermal evaporation: the impact of Ge concentration on physical properties

NASA Astrophysics Data System (ADS)

Courel, Maykel; Sanchez, T. G.; Mathews, N. R.; Mathew, X.

2018-03-01

In this work, the processing of Cu2ZnGeS4 (CZGS) thin films by a thermal evaporation technique starting from CuS, GeS and ZnS precursors, and post-deposition thermal processing, is discussed. Batches of films with GeS layers of varying thicknesses are deposited in order to study the role of Ge concentration on the structural, morphological, optical and electrical properties of CZGS films. The formation of the CZGS compound with a tetragonal phase and a kesterite structure is confirmed for all samples using XRD and Raman studies. An improvement in crystallite size for Ge-poor films is also observed in the XRD analysis, which is in good agreement with the grain size observed in the cross section SEM image. Furthermore, it is found that the band-gap of CZGS film can be tailored in the range of 2.0-2.23 eV by varying Ge concentration. A comprehensive electrical characterization is also performed which demonstrates that slightly Ge-poor samples are described by the lowest grain boundary defect densities and the highest photosensitivity and mobility values. A study of the work function of CZGS samples with different Ge concentrations is also presented. Finally, a theoretical evaluation is presented, considering, under ideal conditions, the possible impact of these films on device performance. Based on the characterization results, it is concluded that Ge-poor CZGS samples deposited by thermal evaporation present better physical properties for device applications.

Enhanced photoluminescence and phosphorescence properties of green phosphor Zn2GeO4:Mn(2+)via composition modification with GeO2 and MgF2.

PubMed

Pan, Yuexiao; Li, Li; Lu, Jing; Pang, Ran; Wan, Li; Huang, Shaoming

2016-06-21

A green long-lasting phosphorescence (LLP) phosphor Zn2GeO4:Mn(2+) (ZGOM) has been synthesized by a solid-state method at 1100 °C in air. The luminescence intensity has been improved up to 9 and 6 times through mixing GeO2 and MgF2 into the composition, respectively. The phosphorescence duration of the sample has been prolonged to 5 h. The phosphor, composed of a mixture of Zn2GeO4 (ZGO), GeO2, and MgGeO3 phases, emits enhanced green luminescence with a broad excitation band between 250 nm to 400 nm. Under identical measurement conditions, the optimized phosphor ZGOM has a higher emission intensity and shows longer wavelength emission than those of the commercial green LLP phosphor SrAl2O4:Eu,Dy (SAOED) under an excitation at 336 nm. The quantum yield of the sample modified by GeO2 and MgF2 is as high as 95.0%. Understanding of the formation mechanism for enhancement of emission intensity and prolonging of phosphorescence duration of ZGOM is fundamentally important, which might be extended to other identified solid-state inorganic phosphor materials for advanced properties.

Space Solar Cell Research and Development Projects at Emcore Photovoltaics

NASA Technical Reports Server (NTRS)

Sharps, Paul; Aiken,Dan; Stan, Mark; Cornfeld, Art; Newman, Fred; Endicter, Scott; Girard, Gerald; Doman, John; Turner, Michele; Sandoval, Annette;

Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme.

PubMed

Huang, Chun-Ying; Lee, Ya-Ju; Lin, Tai-Yuan; Chang, Shao-Lun; Lian, Jan-Tian; Lin, Hsiu-Mei; Chen, Nie-Chuan; Yang, Ying-Jay

2014-02-15

In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73×10¹⁷ cm⁻³, a high mobility of 210 cm²/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jia, Roger; Zhu, Tony; Bulović, Vladimir; Fitzgerald, Eugene A.

2018-05-01

III-IV-V heterovalent alloys have the potential to satisfy the need for infrared bandgap materials that also have lattice constants near GaAs. In this work, significant room temperature photoluminescence is reported for the first time in high quality III-IV-V alloys grown by metalorganic chemical vapor deposition. Pronounced phase separation, a characteristic suspected to quench luminescence in the alloys in the past, was successfully inhibited by a modified growth process. Small scale composition fluctuations were observed in the alloys; higher growth temperatures resulted in fluctuations with a striated morphology, while lower growth temperatures resulted in fluctuations with a speckled morphology. The composition fluctuations cause bandgap narrowing in the alloys—measurements of various compositions of (GaAs)1-x(Ge2)x alloys reveal a maximum energy transition of 0.8 eV under 20% Ge composition rather than a continuously increasing transition with the decreasing Ge composition. Additionally, luminescence intensity decreased with the decreasing Ge composition. The alloys appear to act as a Ge-like solid penetrating a GaAs lattice, resulting in optical properties similar to those of Ge but with a direct-bandgap nature; a decrease in the Ge composition corresponds to a reduction in the light-emitting Ge-like material within the lattice. An energy transition larger than 0.8 eV was obtained through the addition of silicon to the (GaAs)1-x(Ge2)x alloy. The results indicate significant promise for III-IV-V alloys as potential materials for small bandgap optical devices with previously unachievable lattice constants.

Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Yen, Kuo-Yi; Chiu, Chien-Hua; Hsiao, Chi-Ying; Li, Chun-Wei; Chou, Chien-Hua; Lo, Ko-Ying; Chen, Tzu-Pei; Lin, Chu-Hsien; Lin, Tai-Yuan; Gong, Jyh-Rong

2014-02-01

Ga-doped ZnO (GZO) and In-doped ZnO (IZO) films were prepared by atomic layer deposition (ALD), and the ALD-grown GZO (or IZO) films with (or without) N2 annealing were employed to serve as transparent conducting layers (TCLs) in InGaN/GaN (multiple quantum well) MQW LEDs. Based on θ-to-2θ X-ray diffraction (XRD) analyses, the N2-annealed GZO was found to show almost the same lattice constant c as ZnO does, while the lattice constant c of a N2-annealed IZO was detected to be larger than that of the ZnO. It appears that the implementation of N2-annealed ALD-grown GZO (or IZO) in an InGaN/GaN MQW LED allows to enable light extraction and forward voltage reduction of the LED under certain conditions. At 20 mA operating condition, the 400 °C N2-annealed n-GZO-coated and the 600 °C N2-annealed n-IZO-coated InGaN/GaN MQW LEDs were found to exhibit optimized forward voltages of 3.1 and 3.2 V, respectively, with the specific contact resistances of the n-GZO/p-GaN and n-IZO/p-GaN contacts being 4.1×10-3 and 8.8×10-3 Ω-cm2. By comparing with an InGaN/GaN MQW LED structure having a commercial-grade indium tin oxide (ITO) TCL, the 400 °C N2-annealed n-GZO-coated InGaN/GaN MQW LED shows an increment of light output power of 15% at 20 mA. It is believed that the enhanced light extraction of the n-GZO-coated InGaN/GaN MQW LED is due to a higher refractive index of n-GZO than that of ITO along with a comparable optical transmittance of n-GZO to that of ITO.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

High bit rate germanium single photon detectors for 1310nm

NASA Astrophysics Data System (ADS)

Seamons, J. A.; Carroll, M. S.

2008-04-01

There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD operated at relatively short GM hold-off times to examine whether there are potential advantages to using Ge for 1310 nm single photon detection. A weaker after-pulsing dependence on frequency is observed offering initial indications of the potential that Ge APDs might provide better high frequency performance.

Germanium- and tellurium-doped GaAs for non-alloyed p-type and n-type ohmic contacts

NASA Astrophysics Data System (ADS)

Park, Joongseo; Barnes, Peter A.; Lovejoy, Michael L.

1995-08-01

Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to p-GaAs while Te was used for the n-type contacts. Hall measurements were carried out for the samples grown from melts in which the mole fraction of Ge was varied between 1.55 atomic % and 52.2 atomic %, while the Te mole fractions varied between 0.03% and 0.5%. Specific contact resistance, rc, as low as rcp=2.9×10-6 ohm-cm 2 for Ge doping of p=(Na-Nd)=6.0×1019 holes/cm3 was measured for p-contacts and rcn=9.6×10-5 ohm-cm2 was measured for Te doping of n=(Nd-Na)=8.9×1018 electrons/cm3 for GaAs metallized with non-alloyed contacts of Ti/Al.

Coordination of Fe, Ga and Ge in high pressure glasses by Moessbauer, Raman and X-ray absorption spectroscopy, and geological implications

NASA Technical Reports Server (NTRS)

Fleet, M. E.; Henderson, G. S.; Herzberg, C. T.; Crozier, E. D.; Osborne, M. D.; Scarfe, C. M.

1984-01-01

For some time, it has been recognized that the structure of silicate liquids has a great bearing on such magma properties as viscosity, diffusivity, and thermal expansion and on the extrapolation of thermodynamic quantities outside of the experimentally measurable range. In this connection it is vital to know if pressure imposes changes in melt structure similar to the pressure-induced reconstructive transformations in crystals. In the present study on 1 bar and high pressure glasses, an investigation is conducted regarding the coordination of Fe(3+) in Fe silicate glasses by Moessbauer spectroscopy. Raman spectroscopy is employed to explore the coordinations of Ge(4+) in GeO2 glasses and of Ga(3+) in NaGa silicate glasses, while the coordination of Ga(3+) in NaGaSiO4 glasses is studied with the aid of methods of X-ray absorption spectroscopy.

Coordination of Fe, Ga and Ge in high pressure glasses by Moessbauer, Raman and X-ray absorption spectroscopy, and geological implications

NASA Astrophysics Data System (ADS)

Fleet, M. E.; Herzberg, C. T.; Henderson, G. S.; Crozier, E. D.; Osborne, M. D.; Scarfe, C. M.

1984-07-01

For some time, it has been recognized that the structure of silicate liquids has a great bearing on such magma properties as viscosity, diffusivity, and thermal expansion and on the extrapolation of thermodynamic quantities outside of the experimentally measurable range. In this connection it is vital to know if pressure imposes changes in melt structure similar to the pressure-induced reconstructive transformations in crystals. In the present study on 1 bar and high pressure glasses, an investigation is conducted regarding the coordination of Fe(3+) in Fe silicate glasses by Moessbauer spectroscopy. Raman spectroscopy is employed to explore the coordinations of Ge(4+) in GeO2 glasses and of Ga(3+) in NaGa silicate glasses, while the coordination of Ga(3+) in NaGaSiO4 glasses is studied with the aid of methods of X-ray absorption spectroscopy.

Melioration of Optical and Electrical Performance of Ga-N Codoped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-06-01

Transparent and conducting p-type zinc oxide (ZnO) thin films doped with gallium (Ga) and nitrogen (N) simultaneously were deposited on glass substrates by spray pyrolysis technique. Phase composition analysis by X-ray diffraction confirmed the polycrystallinity of the films with pure ZnO phase. Energy dispersive X-ray analysis showed excellent incorporation of N in the ZnO matrix by means of codoping. The optical transmittance of N monodoped film was poor but got improved with Ga-N codoping and also resulted in the enhancement of optical energy gap. Hole concentration increased with codoping and consequently, lower resistivity and high stability were obtained.

Functionalized ZnO Nanoparticles with Gallic Acid for Antioxidant and Antibacterial Activity against Methicillin-Resistant S. aureus

PubMed Central

Lee, Joo Min; Choi, Kyong-Hoon; Min, Jeeeun; Kim, Ho-Joong; Jee, Jun-Pil; Park, Bong Joo

2017-01-01

In this study, we report a new multifunctional nanoparticle with antioxidative and antibacterial activities in vitro. ZnO@GA nanoparticles were fabricated by coordinated covalent bonding of the antioxidant gallic acid (GA) on the surface of ZnO nanoparticles. This addition imparts both antioxidant activity and high affinity for the bacterial cell membrane. Antioxidative activities at various concentrations were evaluated using a 2,2′-azino-bis(ethylbenzthiazoline-6-sulfonic acid) (ABTS) radical scavenging method. Antibacterial activities were evaluated against Gram-positive bacteria (Staphylococcus aureus: S. aureus), including several strains of methicillin-resistant S. aureus (MRSA), and Gram-negative bacteria (Escherichia coli). The functionalized ZnO@GA nanoparticles showed good antioxidative activity (69.71%), and the bactericidal activity of these nanoparticles was also increased compared to that of non-functionalized ZnO nanoparticles, with particularly effective inhibition and high selectivity for MRSA strains. The results indicate that multifunctional ZnO nanoparticles conjugated to GA molecules via a simple surface modification process displaying both antioxidant and antibacterial activity, suggesting a possibility to use it as an antibacterial agent for removing MRSA. PMID:29099064

Electromechanical phenomena in semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Lew Yan Voon, L. C.; Willatzen, M.

2011-02-01

Electromechanical phenomena in semiconductors are still poorly studied from a fundamental and an applied science perspective, even though significant strides have been made in the last decade or so. Indeed, most current electromechanical devices are based on ferroelectric oxides. Yet, the importance of the effect in certain semiconductors is being increasingly recognized. For instance, the magnitude of the electric field in an AlN/GaN nanostructure can reach 1-10 MV/cm. In fact, the basic functioning of an (0001) AlGaN/GaN high electron mobility transistor is due to the two-dimensional electron gas formed at the material interface by the polarization fields. The goal of this review is to inform the reader of some of the recent developments in the field for nanostructures and to point out still open questions. Examples of recent work that involves the piezoelectric and pyroelectric effects in semiconductors include: the study of the optoelectronic properties of III-nitrides quantum wells and dots, the current controversy regarding the importance of the nonlinear piezoelectric effect, energy harvesting using ZnO nanowires as a piezoelectric nanogenerator, the use of piezoelectric materials in surface acoustic wave devices, and the appropriateness of various models for analyzing electromechanical effects. Piezoelectric materials such as GaN and ZnO are gaining more and more importance for energy-related applications; examples include high-brightness light-emitting diodes for white lighting, high-electron mobility transistors, and nanogenerators. Indeed, it remains to be demonstrated whether these materials could be the ideal multifunctional materials. The solutions to these and other related problems will not only lead to a better understanding of the basic physics of these materials, but will validate new characterization tools, and advance the development of new and better devices. We will restrict ourselves to nanostructures in the current article even though the measurements and calculations of the bulk electromechanical coefficients remain challenging. Much of the literature has focused on InGaN/GaN, AlGaN/GaN, ZnMgO/ZnO, and ZnCdO/ZnO quantum wells, and InAs/GaAs and AlGaN/AlN quantum dots for their optoelectronic properties; and work on the bending of nanowires have been mostly for GaN and ZnO nanowires. We hope the present review article will stimulate further research into the field of electromechanical phenomena and help in the development of applications.

Remote p-type Doping in GaSb/InAs Core-shell Nanowires

PubMed Central

Ning, Feng; Tang, Li-Ming; Zhang, Yong; Chen, Ke-Qiu

2015-01-01

By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote p-type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs, and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote p-type doping. PMID:26028535

Heavy Metals Resisting Gravity in White Dwarfs?

NASA Astrophysics Data System (ADS)

Rauch, T.; Gamrath, S.; Quinet, P.; Hoyer, D.; Werner, K.; Kruk, J. W.

2017-03-01

Spectral lines of heavy metals, identified in high-resolution ultraviolet spectra of the DO-type white dwarf RX J0503.9-2854 (RE 0503-289), allow precise abundance determinations of these species by means of advanced non-local thermodynamic equilibrium stellar-atmosphere models - provided that reliable atomic data is available. Such analyses of Zn (atomic number Z = 30), Ga (31), Ge (32), As (33), Mo (42), Kr (36), Zr (40), Xe (54), and Ba (56) have recently shown that, without exception, their abundances are unexpectedly strongly supersolar (up to about 5 dex). This is much higher than predicted by recent asymptotic giant branch nucleosynthesis calculations. Thus, the interplay of gravitational settling and radiative levitation may play an important role for their photospheric prominence.

Testing Room-Temperature Ionic Liquid Solutions for Depot Repair of Aluminum Coatings

DTIC Science & Technology

2011-05-01

Ne 3 Na Mg IIIB IVB VB VIB VIIB ------ VIIIB ------ IB IIB Al Si P S Cl Ar 4 K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga Ge As Se Br Kr 5 Rb Sr Y Zr Nb Mo Tc...Ru Rh Pd Ag Cd In Sn Sb Te I Xe 6 Cs Ba La Hf Ta W Re Os Ir Pt Au Hg Tl Pb Bi Po At Rn 7 Fr Ra Ac Ce Pr Nd Pm Sm Eu Gd Tb Dy Ho Er Tm Yb Lu Th Pa U Np...Electroplating Bath Lid Arrangement ;:::::::::::=== Thermometer Purge gas vent Anode lead Cathode lead (Extractable from the lid) Purge feed gas

Heavy Metals Resisting Gravity in White Dwarfs?

NASA Technical Reports Server (NTRS)

Rauch, Thomas; Gamrath, Sebastien; Quinet, Pascal; Hoyer, Denny; Werner, Klaus; Kruk, Jeffrey Walter

2017-01-01

Spectral lines of heavy metals, identified in high-resolution ultraviolet spectra of the DO-type white dwarf RX J0503.9-2854 (RE 0503-289), allow precise abundance determinations of these species by means of advanced non-local thermo-dynamic equilibrium stellar-atmosphere models provided that reliable atomic data is available. Such analyses of Zn (atomic number Z equals 30), Ga (31), Ge (32), As (33), Mo(42), Kr (36), Zr (40), Xe (54), and Ba (56) have recently shown that, without exception, their abundances are unexpectedly strongly supersolar (up to about 5 dex (decimal exponent)). This is much higher than predicted by recent asymptotic giant branch nucleosynthesis calculations. Thus, the interplay of gravitational settling and radiative levitation may play an important role for their photospheric prominence.

Surface Coatings on Lunar Volcanic Glasses

NASA Technical Reports Server (NTRS)

Wentworth, Susan J.; McKay, D. S.; Thomas,-Keprta, K. L.; Clemett, S. J.

2007-01-01

We are undertaking a detailed study of surface deposits on lunar volcanic glass beads. These tiny deposits formed by vapor condensation during cooling of the gases that drove the fire fountain eruptions responsible for the formation of the beads. Volcanic glass beads are present in most lunar soil samples in the returned lunar collection. The mare-composition beads formed as a result of fire-fountaining approx.3.4-3.7 Ga ago, within the age range of large-scale mare volcanism. Some samples from the Apollo 15 and Apollo 17 landing sites are enriched in volcanic spherules. Three major types of volcanic glass bead have been identified: Apollo 15 green glass, Apollo 17 orange glass, and Apollo 17 "black" glass. The Apollo 15 green glass has a primitive composition with low Ti. The high-Ti compositions of the orange and black glasses are essentially identical to each other but the black glasses are opaque because of quench crystallization. A poorly understood feature common to the Apollo 15 and 17 volcanic glasses is the presence of small deposits of unusual materials on their exterior surfaces. For example, early studies indicated that the Apollo 17 orange glasses had surface enrichments of In, Cd, Zn, Ga, Ge, Au, and Na, and possible Pb- and Zn-sulfides, but it was not possible to characterize the surface features in detail. Technological advances now permit us to examine such features in detail. Preliminary FE-TEM/X-ray studies of ultramicrotome sections of Apollo 15 green glass indicate that the surface deposits are heterogeneous and layered, with an inner layer consisting of Fe with minor S and an outer layer of Fe and no S, and scattered Zn enrichments. Layering in surface deposits has not been identified previously; it will be key to defining the history of lunar fire fountaining.

Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method.

PubMed

Hong, Young Joon; Kim, Yong-Jin; Jeon, Jong-Myeong; Kim, Miyoung; Choi, Jun Hee; Baik, Chan Wook; Kim, Sun Il; Park, Sung Soo; Kim, Jong Min; Yi, Gyu-Chul

2011-05-20

We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Liu, Wei; Fan, Yu; Li, Xiaodong; Lin, Shuping; Liu, Yang; Shi, Sihan; Wang, He; Zhou, Zhiqiang; Zhang, Yi; Sun, Yun

2018-03-01

Cu(In,Ga)Se2 thin film solar cells are of great interest for research and industrial applications with their high conversion efficiencies, long-term stability and significant lifetimes. Such a solar cell of a p-n junction consists of p-type Cu(In,Ga)Se2 films as a light absorber and n-type CdS as a buffer layer, which often emerges with intrinsic ZnO. Aimed at eco-friendly fabrication protocols, a large number of strategies have been investigated to fabricate a Cd-free n-type buffer layer such as Zn(O,S) in Cu(In,Ga)Se2 solar cells. Also, if the Zn(O,S) films are prepared by coevaporation or sputtering, it will offer high compatibility with the preferred mass production. Here, we propose and optimize a dry method for Zn(O,S) deposition in a radio frequency sputtering. In particular, the strategy for the twin-layer configurations of Zn(O,S) films not only greatly improve their electrical conductance and suppress charge carrier recombination, but also avoid degradation of the Zn(O,S)/Cu(In,Ga)Se2 interfaces. Indeed, the high quality of such twin Zn(O,S) layers have been reflected in the similar conversion efficiencies of the complete solar cells as well as the large short-circuit current density, which exceeds the CdS reference device. In addition, Zn(O,S) twin layers have reduced the production time and materials by replacing the CdS/i-ZnO layers, which removes two fabrication steps in the multilayered thin film solar cells. Furthermore, the device physics for such improvements have been fully unveiled with both experimental current-voltage and capacitance-voltage spectroscopies and device simulations via wxAMPS program. Finally, the proposed twin-layer Zn(O,S)/Cu(In,Ga)Se2 interfaces account for the broadening of the depletion region of photogenerated charge carriers, which greatly suppress the carrier recombination at the space charge region, and eventually lead to the more efficient collection of charge carriers at both electrodes.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

DOE PAGES

Gan, Zhaofeng; Perea, Daniel E.; Yoo, Jinkyoung; ...

2016-09-13

Doped Si-Ge nanowire (NW) heterojunctions were grown using the vapor-liquid-solid method with AuGa and Au catalyst particles. Transmission electron microscopy and off-axis electron holography (EH) were used to characterize the nanostructure and to measure the electrostatic potential profile across the junction resulting from electrically active dopants, while atom-probe tomography (APT) was used to determine the Si, Ge and total (active and inactive) dopant concentration profiles. A comparison of the measured potential profile with simulations indicated that Ga dopants unintentionally introduced during AuGa catalyst growth were electronically inactive despite APT results that showed considerable amounts of Ga in the Si region.more » 10% P in Ge and 100% B in Si were estimated to be activated, which was corroborated by in situ electron-holography biasing experiments. This combination of EH, APT, in situ biasing and simulations allows a better knowledge and understanding of the electrically active dopant distributions in NWs.« less

Magneto-transport and microstructure of Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/Cu lateral spin valves prepared by top-down microfabrication process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ikhtiar,; Mitani, S.; Hono, K., E-mail: kazuhiro.hono@nims.go.jp

Heusler alloy-based lateral spin valves with ohmic contacts are prepared for the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/Cu system by means of the top-down microfabrication process. The magneto-transport and microstructure are characterized to investigate the influence of the microfabrication route on the spin dependent transport of lateral spin valves systematically. A large non-local spin signal (△R{sub S}) of 17.3 mΩ is observed at room temperature, which is attributed to the highly spin-polarized Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) ferromagnet and the clean Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/Cu interfaces confirmed by transmission electron microscopy. Based on the general expression of one-dimensional spin diffusion model, we discuss themore » importance of interfacial spin polarization in Heusler alloy-based lateral spin valves.« less

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

NASA Technical Reports Server (NTRS)

Rajakarunanayake, Yasantha; Mcgill, Tom C.

1990-01-01

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanoto, H.; Loke, W. K.; Yoon, S. F.

In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample wheremore » the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.« less

Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

NASA Astrophysics Data System (ADS)

Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

2005-07-01

Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

Chemical characteristics and source of size-fractionated atmospheric particle in haze episode in Beijing

NASA Astrophysics Data System (ADS)

Tan, Jihua; Duan, Jingchun; Zhen, Naijia; He, Kebin; Hao, Jiming

2016-01-01

The abundance, behavior, and source of chemical species in size-fractionated atmospheric particle were studied with a 13-stage low pressure impactor (ELPI) during high polluted winter episode in Beijing. Thirty three elements (Al, Ca, Fe, K, Mg, Na, Si, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Sr, Zr, Mo, Ag, Cd, In, Sn, Sb, Cs, Ba, Hg, Tl, and Pb) and eight water soluble ions (Cl-, NO3-, SO42 -, NH4+, Na+, K+, Ca2 +, and Mg2 +) were determined by ICP/MS and IC, respectively. The size distribution of TC (OC + EC) was reconstructed. Averagely, 51.5 ± 5.3% and 74.1 ± 3.7% of the total aerosol mass was distributed in the sub-micron (PM1) and fine particle (PM2.5), respectively. A significant shift to larger fractions during heavy pollution episode was observed for aerosol mass, NH4+, SO42 -, NO3-, K, Fe, Cu, Zn, Cd, and Pb. The mass size distributions of NH4+, SO42 -, NO3-, and K were dominated by accumulation mode. Size distributions of elements were classified into four main types: (I) elements were enriched within the accumulation mode (< 1 μm, Ge, Se, Ag, Sn, Sb, Cs, Hg, Ti, and Pb); (II) those mass (K, Cr, Mn, Cu, Zn, As, Mo, and Cd) was resided mainly within the accumulation mode, ranged from 1 to 2 μm; (III) Na, V, Co, Ni, and Ga were distributed among fine, intermediate, and coarse modes; and (IV) those which were mainly found within particles larger than 2.7 μm (Al, Mg, Si, Ca, Sc, Tl, Fe, Sr, Zr, and Ba). [H+]cor showed an accumulation mode at 600-700 nm and the role of Ca2 + should be fully considered in the estimation of acidity. The acidity in accumulation mode particles suggested that generally gaseous NH3 was not enough to neutralize sulfate completely. PMF method was applied for source apportionment of elements combined with water soluble ions. Dust, vehicle, aged coal combustion, and sea salt were identified, and the size resolved source apportionments were discussed. Aged coal combustion was the important source of fine particles and dust contributed most to coarse particle.

Volatile Element Behavior During Melting and Vaporisation on Earth and Protoplanets.

NASA Astrophysics Data System (ADS)

Wood, B. J.; Norris, C. A.

2017-12-01

During accretion the Earth and many of the smaller bodies which were added to it, underwent periods of partial melting, vaporisation and re-condensation. This resulted in patterns of volatile element depletion relative to CI chondrite which are difficult to interpret. The behavior of moderately volatile elements (Pb, Cd, Zn,Cu, In,Tl etc) during these melting, vaporisation and condensation processes is usually approximated by the temperature of condensation from a gas of solar composition. Thus, Tl and In have low condensation temperatures and are regarded as the most volatile of this group. In order to test this volatility approximation we have studied the vaporisation behavior of 13 elements (Ag,Bi,Cd,Cr,Cu,Ga,Ge,In,Pb,Sb,Sn,Tl,Zn) from molten basalt at 1 atm pressure and oxygen fugacities between Ni-NiO and 2 log units below Fe-FeO. The relative volatilities of the elements turn out to be only weakly correlated with condensation temperature, indicating that the latter is a poor proxy for volatility on molten bodies. Cu, Zn and In for example all have similar volatility in the oxygen fugacity range of concern, despite the condensation temperature of Cu (1037K at 10-4bar) being 500K greater than that of In. The oxygen fugacity dependence of volatility indicates that the volatile species are, for all elements more reduced than the melt species. We addressed the differences between condensation temperature and relative volatility in 2 steps. Firstly we used metal-silicate partitioning experiments to estimate the activity coefficients of the trace element oxides in silicate melts. We then used available thermodynamic data to compute the vapor pressures of the stable species of these 13 elements over the silicate melt at oxygen fugacities ranging from Ni-NiO to about 6 log units below Fe-FeO, which approximates the solar gas. Thus we find that presence of Cl and S in the solar gas and the stable Cl and S species of In,Tl Ga Ge Cd and Sn are important contributing factors to volatility in the solar nebula. Our measured volatilities from silicate melt under reducing (S and Cl-absent) conditions are consistent with abundances in the silicate Earth, indicating that these moderately volatile elements were added to Earth in bodies which had undergone episodes of melting and vaporisation.

An enzymatic biosensor based on three-dimensional ZnO nanotetrapods spatial net modified AlGaAs/GaAs high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yu; Bioengineering Program, Lehigh University, Bethlehem, Pennsylvania 18015; Zhang, Xiaohui

2014-11-24

We designed and constructed three dimensional (3D) zinc oxide Nanotetrapods (T-ZnOs) modified AlGaAs/GaAs high electron mobility transistors (HEMTs) for enzymatic uric acid (UA) detection. The chemical vapor deposition synthesized T-ZnOs was distributed on the gate areas of HEMTs in order to immobilize uricase and improve the sensitivity of the HEMTs. Combining with the high efficiency of enzyme immobilization by T-ZnOs and high sensitivity from HEMT, the as-constructed uricase/T-ZnOs/HEMTs biosensor showed fast response towards UA at ∼1 s, wide linear range from 0.2 nM to 0.2 mM and the low detect limit at 0.2 nM. The results point out an avenue to design electronic devicemore » as miniaturized lab-on-chip device for high sensitive and specific in biomedical and clinical diagnosis applications.« less

An ultrafast X-ray scintillating detector made of ZnO(Ga)

NASA Astrophysics Data System (ADS)

Zhang, Qingmin; Yan, Jun; Deng, Bangjie; Zhang, Jingwen; Lv, Jinge; Wen, Xin; Gao, Keqing

2017-12-01

Owing to its ultrafast scintillation, quite high light yield, strong radiation resistance, and non-deliquescence, ZnO(Ga) is a highly promising choice for an ultrafast X-ray detector. Because of its high deposition rate, good production repeatability and strong adhesive force, reactive magnetron sputtering was used to produce a ZnO(Ga) crystal on a quartz glass substrate, after the production conditions were optimized. The fluorescence lifetime of the sample was 173 ps. An ultrafast X-ray scintillating detector, equipped with a fast microchannel plate (MCP) photomultiplier tube (PMT), was developed and the X-ray tests show a signal full width at half maximum (FWHM) of only 385.5 ps. Moreover, derivation from the previous measurement shows the ZnO(Ga) has an ultrafast time response (FWHM = 355.1 ps) and a high light yield (14740 photons/MeV).

A Convenient Route to [68Ga]Ga-MAA for Use as a Particulate PET Perfusion Tracer

PubMed Central

Mathias, Carla J.; Green, Mark A.

2008-01-01

A convenient method is described for compounding [68Ga]Ga-MAA (MAA = macroaggregated human serum albumin) with the eluate of a commercially available TiO2-based 68Ge/68Ga generator. The final [68Ga]Ga-MAA product was obtained with an 81.6 ± 5.3% decay-corrected radiochemical yield and a radiochemical purity of 99.8 ± 0.1% (n = 5). Microscopic examination showed the [68Ga]Ga-MAA product to remain within the original particle size range. The entire procedure, from generator elution to delivery of the final [68Ga]Ga-MAA suspension, could be completed in 25 minutes. Only 4.4 ± 0.9% of the total 68Ge breakthrough remaining associated with the final [68Ga]Ga-MAA product. The procedure allows reasonably convenient preparation of [68Ga]Ga-MAA in a fashion that can be readily adapted to sterile product compounding for human use. PMID:18640845

ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors

NASA Astrophysics Data System (ADS)

So, Hongyun; Senesky, Debbie G.

2016-11-01

Rapid, cost-effective, and simple fabrication/packaging of microscale gallium nitride (GaN) ultraviolet (UV) sensors are demonstrated using zinc oxide nanorod arrays (ZnO NRAs) as an antireflective layer and direct bonding of aluminum wires to the GaN surface. The presence of the ZnO NRAs on the GaN surface significantly reduced the reflectance to less than 1% in the UV and 4% in the visible light region. As a result, the devices fabricated with ZnO NRAs and mechanically stable aluminum bonding wires (pull strength of 3-5 gf) showed higher sensitivity (136.3% at room temperature and 148.2% increase at 250 °C) when compared with devices with bare (uncoated) GaN surfaces. In addition, the devices demonstrated reliable operation at high temperatures up to 300 °C, supporting the feasibility of simple and cost-effective UV sensors operating with higher sensitivity in high-temperature conditions, such as in combustion, downhole, and space exploration applications.

CuGaS₂ and CuGaS₂-ZnS Porous Layers from Solution-Processed Nanocrystals.

PubMed

Berestok, Taisiia; Guardia, Pablo; Estradé, Sònia; Llorca, Jordi; Peiró, Francesca; Cabot, Andreu; Brock, Stephanie L

2018-04-05

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS₂ (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS-ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs.

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

2018-04-01

Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

Ferroelectric switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures

NASA Astrophysics Data System (ADS)

Wang, Juan; Salev, Pavel; Grigoriev, Alexei

As a wide-bandgap semiconductor, ZnO has gained substantial interest due to its favorable properties including high electron mobility, strong room-temperature luminescence, etc. The main obstacle of its application is the lack of reproducible and low-resistivity p-type ZnO. P-type doping of ZnO through the interface charge injection, which can be achieved by the polarization switching of ferroelectric films, is a tempting solution. We explored ferroelectric switching behavior of PbZr0.2Ti0.8O3/ZnO/GaN heterostructures epitaxially grown on Sapphire substrates by RF sputtering. The electrical measurements of Pt/PbZr0.2Ti0.8O3/ZnO/GaN ferroelectric-semiconductor capacitors revealed unusual behavior that is a combination of polarization switching and a diode I-V characteristics.

Evaluation of implantation-disordering of (InGa)As/GaAs strained-layer superlattices

NASA Astrophysics Data System (ADS)

Myers, D. R.; Barnes, C. E.; Arnold, G. W.; Dawson, L. R.; Biefeld, R. M.; Zipperian, T. E.; Gourley, P. L.; Fritz, I. J.

The optical and transport properties of InO 2GaO 8As/GaAs strained-layer superlattices (SLS's) which were implanted either with 5 x 10 to the 15th power, 250 keV Zn(+) or with 5 x 10 to 14th power/square cm/cm(2), 70 keV Be(+) and annealed under an arsenic overpressure at 600 (0) C were examined. For both cases, electrical activation in the implantation-doped regions equalled that of similar implants and anneals in bulk GaAs, even though the Be implant retained the SLS structure, while the Zn implant intermixed the SLS layers to produce an alloy semiconductor of the average SLS composition. Photoluminescence intensities in the annealed implanted regions were significantly reduced from that of virgin material, apparently due to residual implant damage. Diodes formed from both the Be- and the Zn-implanted SLS' produced electroluminescence internsity comparable to that of grown-junction SLS diodes in the same chemical system, despite the implantation processing and the potential for vertical lattice mismatch in the Zn-disordered SLS device. These results indicate that Zn-disordering can be as useful for strained-layer superlattices as in lattice-matched systems.

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

NASA Astrophysics Data System (ADS)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

Electrical and optical characteristics of n-Zno/p-GaN hetero-junction diode fabricated by ultra-high vacuum sputter.

PubMed

Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu

2013-09-01

We investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter. A physical relationship between the rotation rate during deposition process and post annealing conditions after deposited ZnO layer on p-GaN layer was discussed. When the rotation rates during deposition process of n-ZnO layer were 5 rpm and 15 rpm, the full width at half maximum of photoluminescence spectra of ZnO layer on the p-GaN layer was about 106 and 133 meV, respectively. Also, the ratio of deep level emission to near band edge emission was dramatically increased as increasing the rotation rate from 5 to 15 rpm. The n-ZnO/p-GaN hetero-junction diode grown at 5 rpm has a higher ratio of forward to reverse currents than the diode grown at 15 rpm. Also, the 600 degrees C-annealed diodes with 5 rpm showed good rectifying behavior with the barrier height of 0.74 eV, the ideality factor of 12.2, and the forward to reverse current ratio of 614 at +/- 8 V.

CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type In x Ga1- x N Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Chen, Wei-Liang; Kuo, Dong-Hau; Tuan, Thi Tran Anh

2017-03-01

Cu2ZnSnSe4 (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu-Zn-Sn metal target, followed by two-step post-selenization at 500-600°C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In0.15Ga0.85N/GaN/CZTSe and In0.15Ga0.85N/In0.3Ga0.7N/CZTSe. The p-type CZTSe and the n-type In x Ga1- x N films were characterized. The properties of CZTSe changed with the selenization temperature and the In x Ga1- x N with its indium content. With the CdS-free modeling for a solar cell structure, the In0.15Ga0.85N/In0.3Ga0.7N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. Current density of ˜48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves that sputtered III-nitride films have their merits.

Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

NASA Astrophysics Data System (ADS)

Radulescu, Fabian

2000-12-01

Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Hjort, Filip; Hashemi, Ehsan; Adolph, David; Ive, Tommy; Haglund, Àsa

2017-02-01

III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch and high refractive index contrast, which could yield a mirror with a broad stopband and a high peak reflectivity using less than 20 DBR-pairs. A crack-free ZnO/GaN DBR was grown by hybrid plasma-assisted molecular beam epitaxy. The ZnO layers were approximately 20 nm thick and had an electron concentration of 1×1019 cm-3, while the GaN layers were 80-110 nm thick with an electron concentration of 1.8×1018 cm-3. In order to measure the resistance, mesa structures were formed by dry etching through the top 3 DBR-pairs and depositing non-annealed Al contacts on the GaN-layers at the top and next to the mesas. The measured specific series resistance was dominated by the lateral and contact contributions and gave an upper limit of 10-3Ωcm2 for the vertical resistance. Simulations show that the ZnO electron concentration and the cancellation of piezoelectric and spontaneous polarization in strained ZnO have a large impact on the vertical resistance and that it could be orders of magnitudes lower than what was measured. This is the first report on electrically conductive ZnO/GaN DBRs and the upper limit of the resistance reported here is close to the lowest values reported for III-nitride-based DBRs.

Isospin degree of freedom in even-even 68-76Ge and 62-70Zn isotopes

NASA Astrophysics Data System (ADS)

Jalili Majarshin, A.

2018-01-01

The introduction of isotopic spin is significant in light nuclei as Ge and Zn isotopes in order to take into account isospin effects on energy spectra. Dynamical symmetries in spherical, γ-soft limits and transition in the interacting boson model IBM-3 are analyzed. Analytic expressions and exact eigenenergies, electromagnetic transitions probabilities are obtained for the transition between spherical and γ-soft shapes by using the Bethe ansatz within an infinite-dimensional Lie algebra in light mass nuclei. The corresponding algebraic structure and reduction chain are studied in IBM-3. For examples, the nuclear structure of the 68-76Ge and 62-70Zn isotopes is calculated in IBM-3 and compared with experimental results.

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer

PubMed Central

2014-01-01

Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. PACS 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn PMID:25489284

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer.

PubMed

Dong, Jing-Jing; Hao, Hui-Ying; Xing, Jie; Fan, Zhen-Jun; Zhang, Zi-Li

2014-01-01

Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.

A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

NASA Technical Reports Server (NTRS)

Lin, A. H.

1972-01-01

In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.

PubMed

Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh; Cheng, Yun-Wei; Chen, Liang-Yi; Lin, Guan-Jhong; Lu, Yu-Hsin; He, Jr-Hau; Kuo, Hao-Chung; Huang, JianJang

2010-12-15

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Limits to Maximum Absorption Length in Waveguide Photodiodes

DTIC Science & Technology

2011-04-13

InGaAsP to InGaAs graded layer (35 nm), a very thin undoped InGaAs absorber layer (20 nm), a p- InP cla~din~ layer (1 J.Lm, Zn = 1x1018 em·\\ a p- InP ...expected excess opticall_oss results from non-ideal coupling, excess waveguide scattering, Zn diffusion from the p-doped InP , larger than...waveguide scattering, Zn diffusion from the p-doped InP , n-doped region absorption, or a combination of the above. The SCOWPD has demonst:r:ated an

Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

NASA Astrophysics Data System (ADS)

Liu, H. F.; Liu, W.; Guo, S.; Chi, D. Z.

2016-03-01

High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal-organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [-4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al2O3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings.

Gallium isotopic evidence for the fate of moderately volatile elements in planetary bodies and refractory inclusions

NASA Astrophysics Data System (ADS)

Kato, Chizu; Moynier, Frédéric

2017-12-01

The abundance of moderately volatile elements, such as Zn and Ga, show variable depletion relative to CI between the Earth and primitive meteorite (chondrites) parent bodies. Furthermore, the first solar system solids, the calcium-aluminum-rich inclusions (CAIs), are surprisingly rich in volatile element considering that they formed under high temperatures. Here, we report the Ga elemental and isotopic composition of a wide variety of chondrites along with five individual CAIs to understand the origin of the volatile elements and to further characterize the enrichment of the volatile elements in high temperature condensates. The δ71Ga (permil deviation of the 71Ga/69Ga ratio from the Ga IPGP standard) of carbonaceous chondrites decreases in the order of CI >CM >CO >CV and is inversely correlated with the Al/Ga ratio. This implies that the Ga budget of the carbonaceous chondrites parent bodies were inherited from a two component mixing of a volatile rich reservoir enriched in heavy isotope of Ga and a volatile poor reservoir enriched in light isotope of Ga. Calcium-aluminum-rich inclusions are enriched in Ga and Zn compared to the bulk meteorite and are both highly isotopically fractionated with δ71Ga down to -3.56‰ and δ66Zn down to -0.74‰. The large enrichment in the light isotopes of Ga and Zn in the CAIs implies that the moderately volatile elements were introduced in the CAIs during condensation in the solar nebula as opposed to secondary processing in the meteorite parent body and supports a change in gas composition in which CAIs were formed.

Study of the structure of 3D-ordered macroporous GaN-ZnS:Mn nanocomposite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurdyukov, D. A., E-mail: kurd@gvg.ioffe.ru; Shishkin, I. I.; Grudinkin, S. A.

A film-type 3D-ordered macroporous GaN-ZnS:Mn nanocomposite with the structure of an inverted opal is fabricated. Structural studies of the nanocomposite are performed, and it is shown that GaN and ZnS:Mn introduced into the pores of the silica opal are nanocrystallites misoriented with respect to each other. It is shown that the nanocomposite is a structurally perfect 3D photonic crystal. The efficiency of using a buffer of GaN crystallites to preclude interaction between the surface of the spherical a-SiO{sub 2} particles forming the opal matrix and chemically active substances introduced into the pores is demonstrated.

Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state

NASA Astrophysics Data System (ADS)

Lany, Stephan; Zunger, Alex

2010-04-01

Employing a Koopmans corrected density functional method, we find that the metal-site acceptors Mg, Be, and Zn in GaN and Li in ZnO bind holes in deep levels that are largely localized at single anion ligand atoms. In addition to this deep ground state (DGS), we observe an effective-masslike delocalized state that can exist as a short lived shallow transient state (STS). The Mg dopant in GaN represents the unique case where the ionization energy of the localized deep level exceeds only slightly that of the shallow effective-mass acceptor, which explains why Mg works so exceptionally well as an acceptor dopant.

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

Electronic structure and p-type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

Semi-automated lab-on-a-chip for dispensing GA-68 radiotracers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weinberg, Irving

We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy.The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken themore » position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only.The American clinical community’s inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.« less

Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, T.P.; Zhu, H.C.; Bian, J.M.

2008-12-01

The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0 0 0 1) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of {approx}10{sup 17} cm{sup -3} and a unintentionally doped n-type ZnO layer with an electron concentration of {approx}10{sup 18} cm{sup -3}. A distinct blue-violet electroluminescence with a dominant emission peak centered at {approx}415 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the electroluminescence (EL) emissions are discussed in comparison with the photoluminescence spectra,more » and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.« less

Structural and optical characterization of terbium doped ZnGa{sub 2}O{sub 4} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Somasundaram, K.; Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi-642001; Girija, K. G., E-mail: kgirija@barc.gov.in

2016-05-23

Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor (21 nm) has been synthesized via low temperature polyol route and subsequently thin films of the same were deposited on glass and ITO substrates by RF magnetron sputtering. The films were characterized by X-ray Diffraction and luminescence measurements. The XRD pattern showed that Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor has a cubic spinel phase. Luminescence behavior of the nanophosphor and as deposited sputtered film was investigated. The PL emission spectra of nanophosphor gave a broad ZnGa{sub 2}O{sub 4} host emission band along with a strong terbium emission and the thin films showedmore » only broad host emission band and there was no terbium ion emission.« less

Fast-neutron-induced potential background near the Q value of neutrinoless double-β decay of 76Ge

NASA Astrophysics Data System (ADS)

Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan

2016-01-01

The 76Ge (n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.89-keV state of 76Ge , which decays by the emission of a 2040.70-keV γ ray. Using high-purity germanium detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrinoless double-β decay of 76Ge with its Q value of 2039.0 keV. At 20-MeV neutron energy the production cross section of the 2040.70-keV γ ray is approximately 0.1 mb.

Shallow doping effect of ZnO treatment using atomic layer deposition process on p-type In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Lee, Changmin; An, Youngseo; Choi, Sungho; Kim, Hyoungsub

2018-06-01

The number of atomic layer deposition (ALD) cycles for ZnO treatment was changed to study its merits and demerits as a passivation layer prior to the deposition of a HfO2 film on a p-type In0.53Ga0.47As substrate. Even a few cycles of ZnO ALD treatment was effective in improving the capacitance–voltage (C–V) characteristics by suppressing strong Fermi-level pinning, which occurred because of a high interface state density near the lower half of the In0.53Ga0.47As band gap. Increases in the number of ZnO ALD cycles induced an increase in the minimum capacitance and response of minority carriers at higher frequencies in the inversion region of the C–V characteristics. According to various temperature- and frequency-dependent C–V analyses, these changes were explained by the shallow p-type doping effect of Zn atoms in the In0.53Ga0.47As substrate. As a disadvantage, ZnO ALD treatment caused a slight increase in the dielectric leakage current.

Formation mechanism of thermally optimized Ga-doped MgZnO transparent conducting electrodes for GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Jang, Seon-Ho; Jo, Yong-Ryun; Lee, Young-Woong; Kim, Sei-Min; Kim, Bong-Joong; Bae, Jae-Hyun; An, Huei-Chun; Jang, Ja-Soon

2015-05-01

We report a highly transparent conducting electrode (TCE) scheme of MgxZn1-xO:Ga/Au/NiOx which was deposited on p-GaN by e-beam for GaN-based light emitting diodes (LEDs). The optical and electrical properties of the electrode were optimized by thermal annealing at 500°C for 1 minute in N2 + O2 (5:3) ambient. The light transmittance at the optimal condition increased up to 84-97% from the UV-A to yellow region. The specific contact resistance decreased to 4.3(±0.3) × 10-5 Ωcm2. The improved properties of the electrode were attributed to the directionally elongated crystalline nanostructures formed in the MgxZn1-xO:Ga layer which is compositionally uniform. Interestingly, the Au alloy nano-clusters created in the MgxZn1-xO:Ga layer during annealing at 500°C may also enhance the properties of the electrode by acting as a conducting bridge and a nano-sized mirror. Based on studies of the external quantum efficiency of blue LED devices, the proposed electrode scheme combined with an optimized annealing treatment suggests a potential alternative to ITO. [Figure not available: see fulltext.

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

PubMed Central

Guardia, Pablo; Estradé, Sònia; Peiró, Francesca; Cabot, Andreu

2018-01-01

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. PMID:29621198

Raman spectroscopy and atomic force microscopy study of interfacial polytypism in GaP/Ge(111) heterostructures

NASA Astrophysics Data System (ADS)

Aggarwal, R.; Ingale, Alka A.; Dixit, V. K.

2018-01-01

Effects of lattice and polar/nonpolar mismatch between the GaP layer and Ge(111) substrate are investigated by spatially resolved Raman spectroscopy. The red shifted transverse optical (TO) and longitudinal optical (LO) phonons due to residual strain, along with asymmetry to TO phonon ∼358 cm-1 are observed in GaP/Ge(111). The peak intensity variation of mode ∼358 cm-1 with respect to TO phonon across the crystallographic morphed surface of GaP micro structures is associated with the topographical variations using atomic force microscopy mapping and Raman spectroscopy performed on both in plane and cross-sectional surface. Co-existence of GaP allotropes, i.e. wurtzite phase near heterojunction interface and dominant zinc-blende phase near surface is established using the spatially resolved polarized Raman spectroscopy from the cross sectional surface of heterostructures. This consistently explains effect of surface morphology on Raman spectroscopy from GaP(111). The study shows the way to identify crystalline phases in other advanced semiconductor heterostructures without any specific sample preparation.

Chemical environment of rare earth ions in Ge{sub 28.125}Ga{sub 6.25}S{sub 65.625} glass-ceramics doped with Dy{sup 3+}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Rongping, E-mail: rongping.wang@anu.edu.au; Yan, Kunlun; Luther-Davies, Barry

2015-10-19

We have annealed Ge{sub 28.125}Ga{sub 6.25}S{sub 65.625} glasses doped with 0.5% Dy to create glass-ceramics in order to examine the local chemical environment of the rare earth ions (REI). More than 12 times enhancement of the emission at 2.9 and 3.5 μm was achieved in glass-ceramics produced using prolonged annealing time. Elemental mapping showed clear evidence that Ga{sub 2}S{sub 3} crystalline grains with a size of 50 nm were dispersed in a Ge-S glass matrix in the glass-ceramics, and the REI could only be found near the Ga{sub 2}S{sub 3} crystalline grains. From the unchanged lineshape of the emissions at 2.9 andmore » 3.5 μm and lack of splitting of the absorption peaks, we concluded that the REI were bonded to Ga on the surface of the Ga{sub 2}S{sub 3} crystals.« less

Improving the ohmic properties of contacts to P-GaN by adding p-type dopants into the metallization layer

NASA Astrophysics Data System (ADS)

Liday, Jozef; Vogrinčič, Peter; Vincze, Andrej; Breza, Juraj; Hotový, Ivan

2012-12-01

The work investigates an increase of the density of free charge carriers in the sub-surface region of p-GaN by adding p-type dopants into the Ni-O layer of an Au/Ni-O metallization structure. We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-O/p-GaN and Au/Ni-Zn-O/p-GaN, thus with magnesium and zinc as p-type dopants. The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with a low concentration of oxygen (0.2 at%). The contacts were annealed in N2 . We have found that the structures containing magnesium or zinc exhibit lower values of contact resistivity in comparison with otherwise identical contacts without Mg or Zn dopants. In our opinion, the lower values of contact resistivity of the structures containing of Mg or Zn are caused by an increased density of holes in the sub-surface region of p-GaN due to diffusion of Mg or Zn from the deposited doped contact layers.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

Chemical trend of acceptor levels of Be, Mg, Zn, and Cd in GaAs, GaP, InP and GaN

NASA Astrophysics Data System (ADS)

Wang, Hao; Chen, An-Ban

2000-03-01

We are investigating the “shallow” acceptor levels in the III-nitride semiconductors theoretically. The k·p Hamiltonians and a model central-cell impurity potential have been used to evaluate the ordering of the ionization energies of impurities Be, Mg, Zn, and Cd in GaN. The impurity potential parameters were obtained from studying the same set of impurities in GaAs. These parameters were then transferred to the calculation for other hosts, leaving only one adjustable screening parameter for each host. This procedure was tested in GaP and InP and remarkably good results were obtained. When applied to GaN, this procedure produced a consistent set of acceptor levels with different k·p Hamiltonians. The calculated ionization energies for Be, Mg, Zn and Cd acceptors in GaN are respectively145, 156, 192, and 312 meV for the zincblende structure, and 229, 250, 320, and 510 meV for the wurtzite structure. These and other results will be discussed.

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S) 2 and Cu 2ZnSn(Se,S) 4 devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se) 2 (CIGS) or Cu 2ZnSn(S,Se) 4 (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Lastly, our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S) 2 and Cu 2ZnSn(Se,S) 4 devices

DOE PAGES

Varley, J. B.; Lordi, V.

2014-08-08

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se) 2 (CIGS) or Cu 2ZnSn(S,Se) 4 (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Lastly, our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

NASA Astrophysics Data System (ADS)

Zhang, Lei; Niu, Pingjuan; Li, Yuqiang; Song, Minghui; Zhang, Jianxin; Ning, Pingfan; Chen, Peizhuan

2017-12-01

Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications were grown on 4 inch Ge substrates by metal organic chemical vapor deposition methods. The triple-junction solar cells were obtained by optimizing the subcell structure, showing a high open-circuit voltage of 2.77 V and a high conversion efficiency of 31% with 30.15 cm2 area under the AM0 spectrum at 25 °C. In addition, the In0.01Ga0.99As middle subcell structure was focused by optimizing in order to improve the anti radiation ability of triple-junction solar cells, and the remaining factor of conversion efficiency for middle subcell structure was enhanced from 84% to 92%. Finally, the remaining factor of external quantum efficiency for triple-junction solar cells was increased from 80% to 85.5%.

Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

NASA Astrophysics Data System (ADS)

Kawano, Jun; Kangawa, Yoshihiro; Ito, Tomonori; Kakimoto, Koichi; Koukitu, Akinori

2012-03-01

In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x˜0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substrate-crystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH3/(NH3+AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III source-gas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

NASA Astrophysics Data System (ADS)

Gibbon, J. T.; Jones, L.; Roberts, J. W.; Althobaiti, M.; Chalker, P. R.; Mitrovic, Ivona Z.; Dhanak, V. R.

2018-06-01

Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions.

Anisotropy of atomic bonds formed by p-type dopants in bulk GaN crystals

NASA Astrophysics Data System (ADS)

Lawniczak-Jablonska, K.; Suski, T.; Gorczyca, I.; Christensen, N. E.; Libera, J.; Kachniarz, J.; Lagarde, P.; Cortes, R.; Grzegory, I.

The anisotropy of atomic bonds formed by acceptor dopants with nitrogen in bulk wurtzite GaN crystals was studied by means of linearly polarized synchrotron radiation used in measurements of X-ray-absorption spectra for the K-edgeof Mg and Zn dopants. These spectra correspond to i) a single acceptor N bond along the c-axis and ii) three bonds realized with N atoms occupying the ab-plane perpendicular to the c-axis. The Zn dopant formed resonant spectra similar to that characteristic for Ga cations. In the case of the Mg dopant, similarity to Ga cations was observed for triple bonds in the ab-plane, only. Practically no resonant structure for spectra detected along the c-axis was observed. The absorption spectra were compared with ab initio calculations using the full-potential linear muffin-tin-orbital method. These calculations were also used for determination of the bond length for Mg-N and Zn-N in wurtzite GaN crystals and show that introducing dopants causes an increase of the lengths of the bonds formed by both dopants. Extended X-ray-absorption fine-structure measurements performed for bulk GaN:Zn confirmed the prediction of the theory in the case of the Zn-N bond. Finally, it is suggested that the anisotropy in the length of the Mg-N bonds, related to their larger strength in the case of bonds in the ab-plane, can explain preferential formation of a superlattice consisting of Mg-rich layers arranged in ab-planes of several bulk GaN:Mg crystals observed by transmission electron microscopy. Within the sensitivity of the method used, no parasitic metallic clusters or oxide compounds formed by the considered acceptors in GaN crystals were found.

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

GaN and ZnO nanostructures

NASA Astrophysics Data System (ADS)

Fündling, Sönke; Sökmen, Ünsal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas; Lähnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning

2010-07-01

GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self- organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures.

Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes.

PubMed

Yao, Yung-Chi; Yang, Zu-Po; Hwang, Jung-Min; Chuang, Yi-Lun; Lin, Chia-Ching; Haung, Jing-Yu; Chou, Chun-Yang; Sheu, Jinn-Kong; Tsai, Meng-Tsan; Lee, Ya-Ju

2016-02-28

ZnO nanorods (NRs) and Ag nanoparticles (NPs) are known to enhance the luminescence of light-emitting diodes (LEDs) through the high directionality of waveguide mode transmission and efficient energy transfer of localized surface plasmon (LSP) resonances, respectively. In this work, we have demonstrated Ag NP-incorporated n-ZnO NRs/p-GaN heterojunctions by facilely hydrothermally growing ZnO NRs on Ag NP-covered GaN, in which the Ag NPs were introduced and randomly distributed on the p-GaN surface to excite the LSP resonances. Compared with the reference LED, the light-output power of the near-band-edge (NBE) emission (ZnO, λ = 380 nm) of our hybridized structure is increased almost 1.5-2 times and can be further modified in a controlled manner by varying the surface morphology of the surrounding medium of the Ag NPs. The improved light-output power is mainly attributed to the LSP resonance between the NBE emission of ZnO NRs and LSPs in Ag NPs. We also observed different behaviors in the electroluminescence (EL) spectra as the injection current increases for the treatment and reference LEDs. This observation might be attributed to the modification of the energy band diagram for introducing Ag NPs at the interface between n-ZnO NRs and p-GaN. Our results pave the way for developing advanced nanostructured LED devices with high luminescence efficiency in the UV emission regime.

High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline

NASA Astrophysics Data System (ADS)

Huang, Changbao; Wu, Haixin; Xiao, Ruichun; Chen, Shijing; Ma, Jiaren

2018-06-01

The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinear-optical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the high-pressure-resisted method can be used to rapidly synthesize other pnictide and chalcogenide semiconductors and control the components ratio.

Luminescent Tellurium-Doped Cadmium Sulfide Electrodes as Probes of Semiconductor Excited-State Deactivation Processes in Photoelectrochemical Cells.

DTIC Science & Technology

1980-08-12

photocurrent and emission intensity. Whereas CdS:Te electrochemistry consisted of oxidation of an electrolyte 2+ reductant, ZnO underwent photoanodic...employed n- and 1 3 2,3 3 3,4p-type GaPl’ n-type ZnO , n-type CdS , and n- and p-type GaAs. We have focussed our attention recently on n-type, tellurium...should point out that our treatment of Or and 0x is not without precedent. Both GaP- and ZnO -based PECs have been examined in this regard.l12 The

Effect of citric acid on material properties of ZnGa2O4:Cr3+ nanopowder prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Hussen, Megersa K.; Dejene, Francis B.; Gonfa, Girma G.

2018-05-01

This paper reports the material properties of Cr3+ (1.0 mol%)-doped ZnGa2O4 nanopowders prepared by citric acid-assisted sol-gel method with metal cations (Zn + Ga) to citric (M:CA) molar ratios of (1:0.5, 1:1, 1:3 and 1:4). The X-ray diffraction (XRD) results show that the synthesized nanoparticles are cubic structured and concentration of citric acid did not affect the structure. The scanning electron microscope (SEM) shows that the increase of the M:CA molar ratio favors the formation of smaller nano particle of ZnGa2O4:Cr3+. The photoluminescence (PL) is found to be maximum for sample with M:CA ratio of 1:1. Further increase in citric acid leads to significant decrease in the PL intensity. Energy-dispersive X-ray spectroscopy (EDS) measurement confirms the presence of the Zn, Ga, O and Cr ions. Ultraviolet-visible (UV-Vis) spectrophotometer measurement shows an increase in reflectance in visible region and the energy band gap was found to decrease with an increase in citric acid molar ratio. The emission spectra, particle size and photoluminescence lifetimes are comparable with reports on bioimaging applications.

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Zheng; Lü, Tie-Yu; Wang, Hui-Qiong

We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature,more » indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.« less

Development of a gallium-doped germanium far-infrared photoconductor direct hybrid two-dimensional array.

PubMed

Fujiwara, Mikio; Hirao, Takanori; Kawada, Mitsunobu; Shibai, Hiroshi; Matsuura, Shuji; Kaneda, Hidehiro; Patrashin, Mikhail; Nakagawa, Takao

2003-04-20

To our knowledge, we are the first to successfully report a direct hybrid two-dimensional (2D) detector array in the far-infrared region. Gallium-doped germanium (Ge:Ga) has been used extensively to produce sensitive far-infrared detectors with a cutoff wavelength of approximately equal to 110 microm (2.7 THz). It is widely used in the fields of astronomy and molecular and solid spectroscopy. However, Ge:Ga photoconductors must be cooled below 4.2 K to reduce thermal noise, and this operating condition makes it difficult to develop a large format array because of the need for a warm amplifier. Development of Ge:Ga photoconductor arrays to take 2D terahertz images is now an important target in such research fields as space astronomy. We present the design of a 20 x 3 Ge:Ga far-infrared photoconductor array directly hybridized to a Si p-type metal-oxide-semiconductor readout integrated circuit using indium-bump technology. The main obstacles in creating this 2D array were (1) fabricating a monolithic Ge:Ga 2D array with a longitudinal configuration, (2) developing a cryogenic capacitive transimpedance amplifer, and (3) developing a technology for connecting the detector to the electronics. With this technology, a prototype Ge:Ga photoconductor with a direct hybrid structure has shown a responsivity as high as 14.6 A/W and a minimum detectable power of 5.6 x 10(-17) W for an integration time of 0.14 s when it was cooled to 2.1 K. Its noise is limited by the readout circuit with 20 microV/Hz(1/2) at 1 Hz. Vibration and cooling tests demonstrated that this direct hybrid structure is strong enough for spaceborne instruments. This detector array will be installed on the Japanese infrared satellite ASTRO-F.

Avalanche solar blind photodetectors based on single crystalline Mg0.47Zn0.53O thin film on Ga:ZnO substrate

NASA Astrophysics Data System (ADS)

Chen, Hao; Zhang, Jingtao; Chen, Zuxin; Liu, Huiqiang; Ma, Xinzhou; Li, Qiuguo; Chu, Guang; Chu, Sheng

2018-05-01

Single crystalline wurtzite Mg0.47Zn0.53O films were grown on Ga:ZnO substrates by pulse laser deposition. The band gap of the films was measured to be 4.43 eV. Vertical devices were fabricated for solar blind photodetection, realizing a high responsivity of 2 A W‑1 at 278 nm and  ‑5 V bias as well as a rejection ratio (R 278 nm/R 350 nm) of over 6  ×  103. A cut-off wavelength of 286 nm and a response time of 77 ms were also achieved. Besides, the devices showed stable response without degeneration under repeating illumination. The high performance of this photodetector was analyzed and attributed to the avalanche effect from high quality Mg0.47Zn0.53O/Ga:ZnO heterojunction at reverse bias. The avalanche gain was calculated to be 14.5 at  ‑10 V.

Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors

NASA Astrophysics Data System (ADS)

Sun, Xiao

As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology. In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well as the challenges to characterize and passivate them. By modifying certain conventional gate admittance methods, both the fast and slow traps in Ge MOS gate stacks is investigated. In addition, a novel ac-transconductance method originated at Yale is introduced and demonstrated with several advanced transistors provided by collaborating groups, such as ultra-thin-body & box SO1 MOSFETs (CEA-LETI), InGaAs MOSFETs (IMEC, UT Austin, Purdue), and GaN MOS-HEMT (MIT). By use of the aforementioned characterization techniques, several effective passivation techniques on high mobility substrates (Ge, InGaAs, GaSb, GeSn, etc.) are evaluated, including a novel Ba sub-monolayer passivation of Ge surface. The key factors that need to be considered in passivating high mobility substrates are revealed. The techniques that we have established for characterizing traps in advanced field-effect transistors, as well as the knowledge gained about these traps by the use of these techniques, have been applied to the study of ionizing radiation effects in high-mobility-channel transistors, because it is very important to understand such effects as these devices are likely to be exposed to radiation-harsh environments, such as in outer space, nuclear plants, and during X-ray or UHV lithography. In this thesis, the total ionizing dose (TD) radiation effects of InGaAs-based MOSFETs and GaN-based MOS-HEMT are studied, and the results help to reveal the underlying mechanisms and inspire ideas for minimizing the TID radiation effects.

Electron-Poor Polar Intermetallics: Complex Structures, Novel Clusters, and Intriguing Bonding with Pronounced Electron Delocalization.

PubMed

Lin, Qisheng; Miller, Gordon J

2018-01-16

Intermetallic compounds represent an extensive pool of candidates for energy related applications stemming from magnetic, electric, optic, caloric, and catalytic properties. The discovery of novel intermetallic compounds can enhance understanding of the chemical principles that govern structural stability and chemical bonding as well as finding new applications. Valence electron-poor polar intermetallics with valence electron concentrations (VECs) between 2.0 and 3.0 e - /atom show a plethora of unprecedented and fascinating structural motifs and bonding features. Therefore, establishing simple structure-bonding-property relationships is especially challenging for this compound class because commonly accepted valence electron counting rules are inappropriate. During our efforts to find quasicrystals and crystalline approximants by valence electron tuning near 2.0 e - /atom, we observed that compositions close to those of quasicrystals are exceptional sources for unprecedented valence electron-poor polar intermetallics, e.g., Ca 4 Au 10 In 3 containing (Au 10 In 3 ) wavy layers, Li 14.7 Mg 36.8 Cu 21.5 Ga 66 adopting a type IV clathrate framework, and Sc 4 Mg x Cu 15-x Ga 7.5 that is incommensurately modulated. In particular, exploratory syntheses of AAu 3 T (A = Ca, Sr, Ba and T = Ge, Sn) phases led to interesting bonding features for Au, such as columns, layers, and lonsdaleite-type tetrahedral frameworks. Overall, the breadth of Au-rich polar intermetallics originates, in part, from significant relativistics effect on the valence electrons of Au, effects which result in greater 6s/5d orbital mixing, a small effective metallic radius, and an enhanced Mulliken electronegativity, all leading to ultimate enhanced binding with nearly all metals including itself. Two other successful strategies to mine electron-poor polar intermetallics include lithiation and "cation-rich" phases. Along these lines, we have studied lithiated Zn-rich compounds in which structural complexity can be realized by small amounts of Li replacing Zn atoms in the parent binary compounds CaZn 2 , CaZn 3 , and CaZn 5 ; their phase formation and bonding schemes can be rationalized by Fermi surface-Brillouin zone interactions between nearly free-electron states. "Cation-rich", electron-poor polar intermetallics have emerged using rare earth metals as the electropositive ("cationic") component together metal/metalloid clusters that mimic the backbones of aromatic hydrocarbon molecules, which give evidence of extensive electronic delocalization and multicenter bonding. Thus, we can identify three distinct, valence electron-poor, polar intermetallic systems that have yielded unprecedented phases adopting novel structures containing complex clusters and intriguing bonding characteristics. In this Account, we summarize our recent specific progress in the developments of novel Au-rich BaAl 4 -type related structures, shown in the "gold-rich grid", lithiation-modulated Ca-Li-Zn phases stabilized by different bonding characteristics, and rare earth-rich polar intermetallics containing unprecedented hydrocarbon-like planar Co-Ge metal clusters and pronounced delocalized multicenter bonding. We will focus mainly on novel structural motifs, bonding analyses, and the role of valence electrons for phase stability.

Ternary oxide nanostructures and methods of making same

DOEpatents

Wong, Stanislaus S [Stony Brook, NY; Park, Tae-Jin [Port Jefferson, NY

2009-09-08

A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.

Gallium Arsenide welded panel technology for advanced spaceflight applications

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Gillanders, M. S.; Garlick, G. F. J.; Cavicchi, B. T.; Glenn, G. S.; Tobin, S. P.

1989-01-01

A significant impediment to the widespread use of GaAs solar cells in space is the cost and weight of the GaAs substrate. In order to overcome these problems, Spectrolab is pursuing thin cell technologies encompassing both liquid phase epitaxy (LPE) GaAs on GaAs and MOCVD GaAs on Ge cells. Spectrolab's experience in the manufacture of 4 to 6 mil 2 cm x 4 cm GaAs cells on a LPE production line is discussed. By thinning the cells at a late state of processing, production yields comparable to 12 mil cells have been achieved. Data are presented showing that GaAs cells can be welded without degradation and have achieved minimum average efficiencies of 18 percent AM0, 28 C with efficiencies up to 20 percent. Spectrolab, in conjunction with Spire Corporation has also been pursuing GaAs on Ge cell technology in support of larger area lighter weight power systems. Data are presented showing that individual 2 cm x 2 cm, 8 mil cell efficiencies up to 21.7 percent have been achieved. Efficiencies up to 24 percent AM0 will be possible by optimizing the GaAs/Ge interface. Cells have been welded without degradation using silver interconnects and have been laid down on an aluminum honeycomb/graphite facesheet substrate to produce a small coupon. The efficiency was 18.1 percent at AM0, 28 C.

Pure ultraviolet emission from ZnO quantum dots-based/GaN heterojunction diodes by MgO interlayer

NASA Astrophysics Data System (ADS)

Chen, Cheng; Liang, Renli; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhao, Chong; Zhang, Wei; Dai, Jiangnan; Chen, Changqing

2017-07-01

We demonstrate the fabrication and characterization of ZnO/GaN-based heterojunction light-emitting diodes (LEDs) by using air-stable and solution-processable ZnO quantum dots (QDs) with a thin MgO interlayer acting as an electron blocking layer (EBL). The ZnO QDs/MgO/ p-GaN heterojunction can only display electroluminescence (EL) characteristic in reverse bias regime. Under sufficient reverse bias, a fairly pure ultraviolet EL emission located at 370 nm deriving from near band edge of ZnO with a full width at half maximum (FWHM) of 8.3 nm had been obtained, while the deep-level emission had been almost totally suppressed. The EL origination and corresponding carrier transport mechanisms were investigated qualitatively in terms of photoluminescence (PL) results and energy band diagram.[Figure not available: see fulltext.

Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.

PubMed

Yum, Woong-Sun; Jeon, Joon-Woo; Sung, Jun-Suk; Seong, Tae-Yeon

2012-08-13

We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through Ag reflectors combined with a Zn middle layer. It is shown that the Zn middle layer (5 nm thick) suppresses the agglomeration of Ag reflectors by forming ZnO and dissolving into Ag. The Ag/Zn/Ag contacts show a specific contact resistance of 6.2 × 10(-5) Ωcm(2) and reflectance of ~83% at a wavelength of 440 nm when annealed at 500 °C, which are much better than those of Ag only contacts. Blue LEDs fabricated with the 500 °C-annealed Ag/Zn/Ag reflectors show a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the annealed Ag only contacts. LEDs with the 500 °C-annealed Ag/Zn/Ag contacts exhibit 34% higher output power (at 20 mA) than LEDs with the annealed Ag only contacts.

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

NASA Astrophysics Data System (ADS)

Oh, Min-Suk

2018-04-01

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

Making highly conductive ZnO: creating donors and destroying acceptors

NASA Astrophysics Data System (ADS)

Look, D. C.; Leedy, K. D.

2012-02-01

We obtain room-temperature resistivities as low as ρ =1.4 x 10-4 Ω-cm in transparent Ga-doped ZnO grown on Al2O3 by pulsed laser deposition (PLD) at 200 °C in 10 mTorr of pure Ar and then annealed in a Zn enfivironment. Donor ND and acceptor NA concentrations are calculated from a recently developed scattering theory that is valid for any degenerate semiconductor material and requires only two input parameters, mobility μ and carrier concentration n measured at any temperature in the range 5 - 300 K. By comparison with SIMS and positron annihilation measurements, it has been shown that the donors in these samples are mostly GaZn, as expected, but that the acceptors are point defects, Zn vacancies VZn. PLD growth in Ar at 200 °C produces a high concentration of donors [GaZn] = 1.4 x 1021 cm-3, but VZn acceptors are produced at the same time, due to self-compensation. Fortunately, a large fraction of the VZn can be eliminated by annealing in a Zn environment. The theory gives ND and NA, and thus [GaZn] and [VZn], at each step of the growth and annealing process. For convenience, the theory is presented graphically, as plots of μ vs n at various values of compensation ratio K = NA/ND. From the value of K corresponding to the experimental values of μ and n, it is possible to calculate ND = n/(1 - K) and NA = nK/(1 - K).

Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

NASA Astrophysics Data System (ADS)

Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

2018-04-01

It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 < d < 20 nm in size are applied on InGaN/GaN multiple quantum well structures with surface morphology less nonuniform than that of ZnO films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon

2017-08-01

We developed NiZn/(Ta/)Ni ohmic contacts to replace expensive AuBe/Au contacts commonly used in high-efficiency AlGaInP-based light-emitting diodes (LEDs), and compared the electrical properties of the two contact types. Unlike the AuBe/Au (130 nm/100 nm) contact, the NiZn/Ta/Ni (130 nm/20 nm/100 nm) contact shows improved electrical properties after being annealed at 500°C, with a contact resistivity of 5.2 × 10-6 Ω cm2. LEDs with the NiZn/Ta/Ni contact exhibited a 4.4% higher output power (at 250 mW) than LEDs with the AuBe/Au contact. In contrast to the trend for the AuBe/Au contact, the Ga 2 p core level for the NiZn/Ta/Ni contact shifted toward lower binding energies after being annealed at 500°C. Auger electron spectroscopy (AES) depth profiles showed that annealing the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, whereas in the NiZn/Ta/Ni samples, Zn atoms indiffused into the GaP layer. The annealing-induced electrical degradation and ohmic contact formation mechanisms are described and discussed on the basis of the results of x-ray photoemission spectroscopy and AES.

The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47As substrates.

PubMed

Skopin, Evgeniy V; Rapenne, Laetitia; Roussel, Hervé; Deschanvres, Jean-Luc; Blanquet, Elisabeth; Ciatto, Gianluca; Fong, Dillon D; Richard, Marie-Ingrid; Renevier, Hubert

2018-06-21

InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In0.53Ga0.47As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Finally, ZnO ALD on In0.53Ga0.47As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy-1, as expected for layer-by-layer ZnO ALD.

Numerical study of the defect adamantine compound CuGaGeSe4

NASA Astrophysics Data System (ADS)

Shen, Kesheng; Zhang, Xianzhou; Lu, Hai; Jiao, Zhaoyong

2018-06-01

The electronic structure, elastic and optical properties of the defect adamantine compound CuGaGeSe4 in ? structure are systematically investigated using first-principles calculations. Through detailed calculation and comparison, we obtain three independent atomic arrangements and predict the most stable atomic arrangement according to the lattice constants and enthalpy formation energies. The elastic constants are calculated, which can be used to predict the axial thermal expansion coefficients accurately. The optical properties of compound CuGaGeSe4, including the dielectric function, refractive index and absorption spectrum, are depicted for a more intuitive understanding. Our calculated zero-frequency limits ɛ1(0) and n(0) are very close to the other theoretical values, which proves that our calculations are reliable.

Investigation of the abnormal Zn diffusion phenomenon in III-V compound semiconductors induced by the surface self-diffusion of matrix atoms

NASA Astrophysics Data System (ADS)

Tang, Liangliang; Xu, Chang; Liu, Zhuming

2017-01-01

Zn diffusion in III-V compound semiconductorsare commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically undergroup III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except InAs. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

P/N InP solar cells on Ge wafers

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented indicating InP/Ge has more power output than GaAs/Ge cells at fluences in excess of this value.

Band alignment and p -type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

2017-05-01

Composed of earth-abundant elements, ZnSnN2 is a promising semiconductor for photovoltaic and photoelectrochemical applications. However, basic properties such as the precise value of the band gap and the band alignment to other semiconductors are still unresolved. For instance, reported values for the band gap vary from 1.4 to 2.0 eV. In addition, doping in ZnSnN2 remains largely unexplored. Using density functional theory with the Heyd-Scuseria-Ernzerhof hybrid functional, we investigate the electronic structure of ZnSnN2, its band alignment to GaN and ZnO, and the possibility of p -type doping. We find that the position of the valence-band maximum of ZnSnN2 is 0.39 eV higher than that in GaN, yet the conduction-band minimum is close to that in ZnO, which suggests that achieving p -type conductivity is likely as in GaN, yet it may be difficult to control unintentional n -type conductivity as in ZnO. Among possible p -type dopants, we explore Li, Na, and K substituting on the Zn site. We show that while LiZn is a shallow acceptor, NaZn and KZn are deep acceptors, which we trace back to large local relaxations around the Na and K impurities due to the atomic size mismatches.

DARPA Perspectives on Multifunctional Materials/Power and Energy

DTIC Science & Technology

2012-08-09

In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed

[Prevalence of genital anomalies in young football players].

PubMed

Mónaco, M; Verdugo, F; Bodell, M; Avendaño, E; Til, L; Drobnic, F

2015-01-01

The purpose of genital examination (GE) during the Pre-participation Physical Examination (PPE) is to identify the state of maturity, and rule out any genital pathology. To describe genital anomalies (GA) and estimate the awareness of GE in young football players. A descriptive, cross-sectional study was conducted in 280 elite football players from the results of PPE over two seasons. There was a detection rate of 5.4% GA, with varicocele being 3.2%, and of which only 13% were aware of their condition. Although this study shows a low incidence of genital abnormality in the study population, only 13% were aware of the GE prior to assessment. These findings demonstrate a low incidence of GA in this population. While GE is recommended during PPE, it is not a routine practice performed by family doctors or sports medicine specialists. This article attempts to raise awareness of the importance of GE in PPE as a preventive health strategy. Copyright © 2014 Asociación Española de Pediatría. Published by Elsevier Espana. All rights reserved.

Effects of phase transformation on the microstructures and magnetostriction of Fe-Ga and Fe-Ga-Zn ferromagnetic shape memory alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yin-Chih, E-mail: lin3312@cc.kuas.edu.tw; Lin, Chien-Feng

2015-05-07

The phase transformation and magnetostriction of bulk Fe{sub 73}Ga{sub 27} and Fe{sub 73}Ga{sub 18}Zn{sub 9} (at. %) ferromagnetic shape memory alloys (FSMs) were investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD), and a magnetostrictive-meter setup. For the Fe{sub 73}Ga{sub 27} FSM alloy solution treated at 1100 °C for 4 h and quenched in ice brine, the antiphase boundary segments of the D0{sub 3} domain were observed in the A2 (disordered) matrix, and the Fe{sub 73}Ga{sub 27} FSM alloy had an optimal magnetostriction (λ{sub ‖}{sup s }= 71 × 10{sup −6} and λ{sub ⊥}{sup s }= −31 × 10{sup −6}). In Fe{sub 73}Ga{sub 27} FSM alloy as-quenched, aged at 700 °C formore » 24 h, and furnace cooled, D0{sub 3} nanoclusters underwent phase transformation to an intermediate tetragonal phase (i.e., L1{sub 0}-like martensite) via Bain distortion, and finally L1{sub 2} (Fe{sub 3}Ga) structures precipitated, as observed by TEM and XRD. The L1{sub 0}-like martensite and L1{sub 2} phases in the aged Fe{sub 73}Ga{sub 27} FSM alloy drastically decreased the magnetostriction from positive to negative (λ{sub ‖}{sup s }= −20 × 10{sup −6} and λ{sub ⊥}{sup s }= −8 × 10{sup −6}). However, in Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy as-quenched and aged, the phase transformation of D0{sub 3} to an intermediate tetragonal martensite phase and precipitation of L1{sub 2} structures were not found. The results indicate that the aged Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy maintained stable magnetostriction (λ{sub ‖}{sup s }= 36 × 10{sup −6} and λ{sub ⊥}{sup s }= −31 × 10{sup −6}). Adding Zn can improve the ferromagnetic shape memory effect of aged Fe{sub 73}Ga{sub 18}Zn{sub 9} alloy, which may be useful in application of the alloy in high temperature environments.« less

Biomimetic growth of gallic acid-ZnO hybrid assemblies and their applications

NASA Astrophysics Data System (ADS)

Sarker, Nazmul H.; Barnaby, Stacey N.; Fath, Karl R.; Frayne, Stephen H.; Nakatsuka, Nako; Banerjee, Ipsita A.

2012-03-01

In this study, we probed the biomimetic formation of gallic acid (GA)-ZnO nanoparticle hybrids. It was found that the morphologies formed were dependent upon pH values, resulting in GA-ZnO hybrids of varying shapes such as micro or nanoplates or fibers. The formed supramolecular GA-ZnO hybrids were found to be luminescent as indicated by confocal microscopy and were utilized for the photocatalytic degradation of the organic dye methylene blue. We also explored the bactericidal effects of the hybrids on Staphylococcus aureus ( S. aureus) as well as Escherichia Coli ( E. Coli). Thus, we have developed a new class of shape-controlled nanohybrid assemblies via mild, green synthetic methods that may be utilized for photocatalytic degradation for environmental remediation as well as for antibacterial applications.

Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

NASA Astrophysics Data System (ADS)

Reshchikov, M. A.; Willyard, A. G.; Behrends, A.; Bakin, A.; Waag, A.

2011-10-01

We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of 0.93±0.04 has been obtained from several approaches based on rate equations.

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

CePd2Ga3 and CePd2Zn3 - Kondo lattices and magnetic behaviour

NASA Astrophysics Data System (ADS)

Bartha, A.; Vališka, M.; Míšek, M.; Proschek, P.; Kaštil, J.; Dušek, M.; Sechovský, V.; Prokleška, J.

2018-05-01

We report the single crystal properties of CePd2Zn3 and CePd2Ga3 compounds. The compounds were prepared by Bridgman method in high-frequency induction furnace. Both compounds adopt the hexagonal PrNi2Al3-type structure with a = 5.3914(2) Å, c = 4.3012(2) Å for CePd2Zn3 and a = 5.4106(8) Å, c = 4.2671(8) Å for CePd2Ga3, respectively. CePd2Zn3 orders antiferromagnetically below TN = 1.9 K. Magnetoresistance measurements revealed a crossover at Bc = 0.95 T. CePd2Ga3 orders ferromagnetically at TC = 6.7 K. Applied hydrostatic pressure reduces the value of the Curie-temperature (rate ∂TC / ∂ p = 0.9 K GPa -1) down to 3.9 K at 3.2 GPa. Both compounds display a strong magnetocrystalline anisotropy with easy axis of magnetization perpendicular to the c-axis in the hexagonal lattice.

Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb

NASA Astrophysics Data System (ADS)

Chai, J.; Lee, K.-K.; Doyle, K.; Dinan, J. H.; Myers, T. H.

2012-10-01

A key issue with the current HgCdTe/Si system is the high dislocation density due to the large mismatch between HgCdTe and Si. An alternative system that has superior lattice matching is HgCdSe/GaSb. A buffer layer to mitigate issues with direct nucleation of HgCdSe on GaSb is ZnTe1- x Se x . We have performed preliminary studies into the growth of lattice-matched ZnTe1- x Se x on both (100) and (211)B GaSb. The effects of substrate orientation, substrate temperature, and growth conditions on the morphology and crystallography of ZnTe0.99Se0.01 alloys were investigated. The lattice-matching condition yielded minimum root-mean-square (rms) roughness of 1.1 nm, x-ray rocking curve full-width at half-maximum (FWHM) value of ~29 arcsec, and density of nonradiative defects of mid-105 cm-2 as measured by imaging photoluminescence.

Effect of interface voids on electroluminescence colors for ZnO microdisk/p-GaN heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin; Jeong, Junseok; Kim, Jong Chan; Kim, Yong-Jin; Jeong, Hu Young; Hong, Young Joon

2017-10-01

This study investigates the influence of voids on the electroluminescence (EL) emission color of ZnO microdisk/p-GaN heterojunction light-emitting diodes (LEDs). For this study, position-controlled microdisk arrays were fabricated on patterned p-GaN via wet chemical epitaxy of ZnO, and specifically, the use of trisodium citrate dihydrate (TCD) yielded high-density voids at the bottom of the microdisk. Greenish yellow or whitish blue EL was emitted from the microdisk LEDs formed with or without TCD, respectively, at reverse-bias voltages. Such different EL colors were found to be responsible for the relative EL intensity ratio between indigo and yellow emission peaks, which were originated from radiative recombination at p-GaN and ZnO, respectively. The relative EL intensity between dichromatic emissions is discussed in terms of (i) junction edge effect provoked by interfacial voids and (ii) electron tunneling probability depending on the depletion layer geometry.

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Lebedev, M. V.; Sorokin, S. V.; Klimko, G. V.; Sedova, I. V.; Gronin, S. V.; Komissarov, K. A.; Calvet, W.; Drozdov, M. N.; Ivanov, S. V.

2017-04-01

A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2 × 4)As or c(4 × 4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 106 cm-2) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing.

Search for the 73Ga ground-state doublet splitting in the β decay of 73Zn

NASA Astrophysics Data System (ADS)

Vedia, V.; Paziy, V.; Fraile, L. M.; Mach, H.; Walters, W. B.; Aprahamian, A.; Bernards, C.; Briz, J. A.; Bucher, B.; Chiara, C. J.; Dlouhý, Z.; Gheorghe, I.; GhiÅ£ǎ, D.; Hoff, P.; Jolie, J.; Köster, U.; Kurcewicz, W.; Licǎ, R.; Mǎrginean, N.; Mǎrginean, R.; Olaizola, B.; Régis, J.-M.; Rudigier, M.; Sava, T.; Simpson, G. S.; Stǎnoiu, M.; Stroe, L.

2017-09-01

The existence of two close-lying nuclear states in 73Ga has recently been experimentally determined: a 1 /2- spin-parity for the ground state was measured in a laser spectroscopy experiment, while a Jπ=3 /2- level was observed in transfer reactions. This scenario is supported by Coulomb excitation studies, which set a limit for the energy splitting of 0.8 keV. In this work, we report on the study of the excited structure of 73Ga populated in the β decay of 73Zn produced at ISOLDE, CERN. Using β -gated, γ -ray singles, and γ -γ coincidences, we have searched for energy differences to try to delimit the ground-state energy splitting, providing a more stringent energy difference limit. Three new half-lives of excited states in 73Ga have been measured using the fast-timing method with LaBr3(Ce) detectors. From our study, we help clarify the excited structure of 73Ga and we extend the existing 73Zn decay to 73Ga with 8 new energy levels and 35 γ transitions. We observe a 195-keV transition consistent with a γ ray de-exciting a short-lived state in the β -decay parent 73Zn.

Performance of Al-0.5 Mg-0.02 Ga-0.1 Sn-0.5 Mn as anode for Al-air battery in NaCl solutions

NASA Astrophysics Data System (ADS)

Ma, Jingling; Wen, Jiuba; Gao, Junwei; Li, Quanan

2014-05-01

In this research, metal-air battery based on Al, Zn, Al-0.5 Mg-0.02 Ga-0.1 Sn and Al-0.5 Mg-0.02 Ga-0.1 Sn-0.5 Mn (wt%) is prepared and the battery performance is investigated by constant current discharge test in 2 mol L-1 NaCl solutions. The characteristics of the anodes after discharge are investigated by electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM). The corrosion behavior of the anodes is studied by self-corrosion rate measurement and potentiodynamic polarization measurement. The results show that Al-Mg-Ga-Sn-Mn is more active than Al, Zn and Al-Mg-Ga-Sn anodes. The self-corrosion rate is found to be in the order: Al < Al-Mg-Ga-Sn-Mn < Al-Mg-Ga-Sn < Zn. It has been observed that the Al-air battery based on Al-Mg-Ga-Sn-Mn offers higher operating voltage and anodic utilization than those with others. SEM and EIS results of the alloy are in good agreement with corrosion characteristics.

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musalinov, S. B.; Anzulevich, A. P.; Bychkov, I. V.

2017-01-15

The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It ismore » shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.« less

Origin of negative thermal expansion in Zn2GeO4 revealed by high pressure study

NASA Astrophysics Data System (ADS)

Cheng, Xuerui; Yuan, Jie; Zhu, Xiang; Yang, Kun; Liu, Miao; Qi, Zeming

2018-03-01

Zn2GeO4, as an open-framework structure compound, exhibits negative thermal expansion (NTE) below room temperature. In this work, we investigated the structural stability and phonon modes employing the x-ray diffraction and Raman spectroscopy under high pressure up to 23.0 GPa within a diamond anvil cell, and we observed that a pressure-induced irreversible amorphization took place around 10.1 GPa. Bulk modulus, pressure coefficients, and Grüneisen parameters were measured for the initial rhombohedral structure. Several low-frequency rigid-unit modes are found to have negative Grüneisen parameter, which accounts for the primary part of NTE in Zn2GeO4. These results further confirm the hypothesis that the pressure-induced amorphization and the negative thermal expansion are correlated phenomena.

Development of bimetallic (Zn@Au) nanoparticles as potential PET-imageable radiosensitizers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Jongmin, E-mail: jongmin.cho@okstate.edu

2016-08-15

Purpose: Gold nanoparticles (GNPs) are being investigated actively for various applications in cancer diagnosis and therapy. As an effort to improve the imaging of GNPs in vivo, the authors developed bimetallic hybrid Zn@Au NPs with zinc cores and gold shells, aiming to render them in vivo visibility through positron emission tomography (PET) after the proton activation of the zinc core as well as capability to induce radiosensitization through the secondary electrons produced from the gold shell when irradiated by various radiation sources. Methods: Nearly spherical zinc NPs (∼5-nm diameter) were synthesized and then coated with a ∼4.25-nm gold layer tomore » make Zn@Au NPs (∼13.5-nm total diameter). 28.6 mg of these Zn@Au NPs was deposited (∼100 μm thick) on a thin cellulose target and placed in an aluminum target holder and subsequently irradiated with 14.15-MeV protons from a GE PETtrace cyclotron with 5-μA current for 5 min. After irradiation, the cellulose matrix with the NPs was placed in a dose calibrator to assess the induced radioactivity. The same procedure was repeated with 8-MeV protons. Gamma ray spectroscopy using an high-purity germanium detector was conducted on a very small fraction (<1 mg) of the irradiated NPs for each proton energy. In addition to experimental measurements, Monte Carlo simulations were also performed with radioactive Zn@Au NPs and solid GNPs of the same size irradiated with 160-MeV protons and 250-kVp x-rays. Results: The authors measured 168 μCi of activity 32 min after the end of bombardment for the 14.15-MeV proton energy sample using the {sup 66}Ga setting on a dose calibrator; activity decreased to 2 μCi over a 24-h period. For the 8-MeV proton energy sample, PET imaging was additionally performed for 5 min after a 12-h delay. A 12-h gamma ray spectrum showed strong peaks at 511 keV (2.05 × 10{sup 6} counts) with several other peaks of smaller magnitude for each proton energy sample. PET imaging showed strong PET signals from mostly decaying {sup 66}Ga. The Monte Carlo results showed that radioactive Zn@Au NPs and solid GNPs provided similar characteristics in terms of their secondary electron spectra when irradiated. Conclusions: The Zn@Au NPs developed in this investigation have the potential to be used as PET-imageable radiosensitizers for radiotherapy applications as well as PET tracers for molecular imaging applications.« less

Development of bimetallic (Zn@Au) nanoparticles as potential PET-imageable radiosensitizers

PubMed Central

Cho, Jongmin; Wang, Min; Gonzalez-Lepera, Carlos; Mawlawi, Osama; Cho, Sang Hyun

2016-01-01

Purpose: Gold nanoparticles (GNPs) are being investigated actively for various applications in cancer diagnosis and therapy. As an effort to improve the imaging of GNPs in vivo, the authors developed bimetallic hybrid Zn@Au NPs with zinc cores and gold shells, aiming to render them in vivo visibility through positron emission tomography (PET) after the proton activation of the zinc core as well as capability to induce radiosensitization through the secondary electrons produced from the gold shell when irradiated by various radiation sources. Methods: Nearly spherical zinc NPs (∼5-nm diameter) were synthesized and then coated with a ∼4.25-nm gold layer to make Zn@Au NPs (∼13.5-nm total diameter). 28.6 mg of these Zn@Au NPs was deposited (∼100 μm thick) on a thin cellulose target and placed in an aluminum target holder and subsequently irradiated with 14.15-MeV protons from a GE PETtrace cyclotron with 5-μA current for 5 min. After irradiation, the cellulose matrix with the NPs was placed in a dose calibrator to assess the induced radioactivity. The same procedure was repeated with 8-MeV protons. Gamma ray spectroscopy using an high-purity germanium detector was conducted on a very small fraction (<1 mg) of the irradiated NPs for each proton energy. In addition to experimental measurements, Monte Carlo simulations were also performed with radioactive Zn@Au NPs and solid GNPs of the same size irradiated with 160-MeV protons and 250-kVp x-rays. Results: The authors measured 168 μCi of activity 32 min after the end of bombardment for the 14.15-MeV proton energy sample using the 66Ga setting on a dose calibrator; activity decreased to 2 μCi over a 24-h period. For the 8-MeV proton energy sample, PET imaging was additionally performed for 5 min after a 12-h delay. A 12-h gamma ray spectrum showed strong peaks at 511 keV (2.05 × 106 counts) with several other peaks of smaller magnitude for each proton energy sample. PET imaging showed strong PET signals from mostly decaying 66Ga. The Monte Carlo results showed that radioactive Zn@Au NPs and solid GNPs provided similar characteristics in terms of their secondary electron spectra when irradiated. Conclusions: The Zn@Au NPs developed in this investigation have the potential to be used as PET-imageable radiosensitizers for radiotherapy applications as well as PET tracers for molecular imaging applications. PMID:27487895

Development of bimetallic (Zn@Au) nanoparticles as potential PET-imageable radiosensitizers.

PubMed

Cho, Jongmin; Wang, Min; Gonzalez-Lepera, Carlos; Mawlawi, Osama; Cho, Sang Hyun

2016-08-01

Gold nanoparticles (GNPs) are being investigated actively for various applications in cancer diagnosis and therapy. As an effort to improve the imaging of GNPs in vivo, the authors developed bimetallic hybrid Zn@Au NPs with zinc cores and gold shells, aiming to render them in vivo visibility through positron emission tomography (PET) after the proton activation of the zinc core as well as capability to induce radiosensitization through the secondary electrons produced from the gold shell when irradiated by various radiation sources. Nearly spherical zinc NPs (∼5-nm diameter) were synthesized and then coated with a ∼4.25-nm gold layer to make Zn@Au NPs (∼13.5-nm total diameter). 28.6 mg of these Zn@Au NPs was deposited (∼100 μm thick) on a thin cellulose target and placed in an aluminum target holder and subsequently irradiated with 14.15-MeV protons from a GE PETtrace cyclotron with 5-μA current for 5 min. After irradiation, the cellulose matrix with the NPs was placed in a dose calibrator to assess the induced radioactivity. The same procedure was repeated with 8-MeV protons. Gamma ray spectroscopy using an high-purity germanium detector was conducted on a very small fraction (<1 mg) of the irradiated NPs for each proton energy. In addition to experimental measurements, Monte Carlo simulations were also performed with radioactive Zn@Au NPs and solid GNPs of the same size irradiated with 160-MeV protons and 250-kVp x-rays. The authors measured 168 μCi of activity 32 min after the end of bombardment for the 14.15-MeV proton energy sample using the (66)Ga setting on a dose calibrator; activity decreased to 2 μCi over a 24-h period. For the 8-MeV proton energy sample, PET imaging was additionally performed for 5 min after a 12-h delay. A 12-h gamma ray spectrum showed strong peaks at 511 keV (2.05 × 10(6) counts) with several other peaks of smaller magnitude for each proton energy sample. PET imaging showed strong PET signals from mostly decaying (66)Ga. The Monte Carlo results showed that radioactive Zn@Au NPs and solid GNPs provided similar characteristics in terms of their secondary electron spectra when irradiated. The Zn@Au NPs developed in this investigation have the potential to be used as PET-imageable radiosensitizers for radiotherapy applications as well as PET tracers for molecular imaging applications.

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers.

PubMed

Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

2017-09-06

Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells.

PubMed

Lee, Ya-Ju; Yao, Yung-Chi; Tsai, Meng-Tsan; Liu, An-Fan; Yang, Min-De; Lai, Jiun-Tsuen

2013-11-04

A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs.

Design of Shallow Acceptors in GaN through Zinc-Magnium Codoping: First-Principles Calculation

NASA Astrophysics Data System (ADS)

Liu, Zhiqiang; Melton, Andrew G.; Yi, Xiaoyan; Wang, Jianwei; Kucukgok, Bahadir; Kang, Jun; Lu, Na; Wang, Junxi; Li, Jinmin; Ferguson, Ian

2013-04-01

In this work, we propose a novel approach to reduce the ionization energy of acceptors in GaN through Zn-Mg codoping. The characteristics of the defect states and the valence-band maximum (VBM) were investigated via first-principles calculation. Our results indicated that the original VBM of the host GaN could be altered by Zn-Mg codoping, thus improving the p-type dopability. We show that the calculated ionization energy ɛ(0/-) of the Zn-Mg acceptor is only 117 meV, which is about 90 meV shallower than that of the isolated Mg acceptor.

Fabrication and characterization of n-ZnO nanonails array/p(+)-GaN heterojunction diode.

PubMed

Zhu, G Y; Chen, G F; Li, J T; Shi, Z L; Lin, Y; Ding, T; Xu, X Y; Dai, J; Xu, C X

2012-10-01

A novel heterojunctional structure of n-ZnO nanonails array/p(+)-GaN light-emitting diode was fabricated by Chemical Vapor Deposition method. A broad electroluminescence spectrum shows two peaks centered at 435 nm and 478 nm at room temperature, respectively. By comparing the photoluminescence and electroluminescence spectra, together with analyzing the energy band structure of heterojunction light emitting diode, it suggested that the electroluminescence peak located at 435 nm originates from Mg acceptor level of p(+)-GaN layer, whereas the electroluminescence peak located at 478 nm originates from the defects of n-ZnO nanonails array.

Role of surface energy on the morphology and optical properties of GaP micro & nano structures grown on polar and non-polar substrates

NASA Astrophysics Data System (ADS)

Roychowdhury, R.; Kumar, Shailendra; Wadikar, A.; Mukherjee, C.; Rajiv, K.; Sharma, T. K.; Dixit, V. K.

2017-10-01

Role of surface energy on the morphology, crystalline quality, electronic structure and optical properties of GaP layer grown on Si (001), Si (111), Ge (111) and GaAs (001) is investigated. GaP layers are grown on four different substrates under identical growth kinetics by metal organic vapour phase epitaxy. The atomic force microscopy images show that GaP layer completely covers the surface of GaAs substrate. On the other hand, the surfaces of Si (001), Si (111), Ge (111) substrates are partially covered with crystallographically morphed GaP island type micro and nano-structures. Origin of these crystallographically morphed GaP island is explained by the theoretical calculation of surface energy of the layer and corresponding substrates respectively. The nature of GaP island type micro and nano-structures and layers are single crystalline with existence of rotational twins on Si and Ge (111) substrates which is confirmed by the phi, omega and omega/2theta scans of high resolution x-ray diffraction. The electronic valence band offsets between the GaP and substrates have been determined from the valence band spectra of ultraviolet photoelectron spectroscopy. The valence electron plasmon of GaP are investigated by studying the energy values of Ga (3d) core level along with loss peaks in the energy dependent photoelectron spectra. The peak observed within the range of 3-6 eV from the Ga (3d) core level in the photoelectron spectra are associated to inter band transitions as their energy values are estimated from the pseudo dielectric function by the spectroscopic ellipsometry.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

PubMed

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

Development of the GaAs-based THz Photoconductor and Balloon-borne Experiment Module TG-ZERO

NASA Astrophysics Data System (ADS)

Watanabe, Kentaroh; Kataza, Hirokazu; Wada, Takehiko; Murakami, Hiroshi; Kamizuka, Takafumi; Makitsubo, Hironobu; Yamashita, Kyohei; Wakaki, Moriaki; Abe, Osamu

2009-08-01

The far-infrared (around 1 terahertz (THz)) extrinsic photoconductor is fabricated by a LPE-grown GaAs semiconductor. This GaAs detector can detect longer wavelength photons than the stressed Ge:Ga conventionally used for astronomical infrared observation. We applied the liquid phase epitaxy to obtain a suitable purity of GaAs crystals, and the test N-GaAs photoconductor device shows spectroscopic response over a wide wavelength range of 150-300 micron. The best sample shows 30 A/W of responsivity and 10-16 W/Hz0.5 of NEP is expected at 295 micron of wavelength and T = 1.6 K. In addition, we constructed the terahertz photometer module (TG-ZERO) using our N-GaAs photoconductors. TG-ZERO has four channel bands with N-GaAs and Ge:Ga photoconductors. The development process, the result of experiments, and the basic specifications of TG-ZERO are all reported in this paper.

Interface Properties of Wide Bandgap Semiconductor Structures

DTIC Science & Technology

1994-06-01

resistive than silicides and their chemistry with 126I I Si-based materials more complex. However, in a series of studies, M. 0. Aboelfotoh et al. have...clarification of these issues. CuGe contacts on Ge:GaN and Mg:GaN. To date, the properties of Cu3Ge films have been documented by Aboelfotoh et al., but the...Martin, V. Malhotra, and J. E. Mahan, J. Vac. Sci. Technol. B 3, 836 (1985). 25. L. Krusin-Elbaum and M. 0. Aboelfotoh , Appl. Phys. Lett. 58(12), 1341

Survey of Nuclear Activations for Intense Proton and Deuteron Beams

DTIC Science & Technology

1992-12-24

1.115 64Zn(d,t)6𔃽 Zn -5.60 ÷ 38 min 2.34 0.51 64Zn(d,a)’ 2 Cu 7.52 ÷ 9.8 min 2.93 0.51 6’Zn(d,2p) 64Cu -2.01 - 12.8 hr 0.575 - c,o+ 12.8 hr 0.656...and for the activation of 5aCo by deuterons on a natural nickel target. 43 THICK-TARGET YIELDS Copper Target 1000 63Cu(d,p) 64Cu 65Cu(d,p)66Cu o 100 6...activation of 1 5 Zn by deuterons and for the GCZn(d,n)"Ga, ’,IZn(d,p)60 Zn, 6SZn(d,p)69mZn, 6 6 Zn(d,(X) 64Cu , and 68Zn(d,2n)6,8Ga reactions in a natural zinc target. 45

Design and Performance of a Triple Source Air Mass Zero Solar Simulator

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Snyder, David

2005-01-01

Simulating the sun in a laboratory for the purpose of measuring solar cells has long been a challenge for engineers and scientists. Multi-junction cells demand higher fidelity of a solar simulator than do single junction cells, due to a need for close spectral matching as well as AM0 intensity. A GaInP/GaAs/Ge solar cell for example, requires spectral matching in three distinct spectral bands (figure 1). A commercial single source high-pressure xenon arc solar simulator such as the Spectrolab X-25 at NASA Glenn Research Center, can match the top two junctions of a GaInP/GaAs/Ge cell to within 1.3% mismatch, with the GaAs cell receiving slightly more current than required. The Ge bottom cell however, is mismatched +8.8%. Multi source simulators are designed to match the current for all junctions but typically have small illuminated areas, less uniformity and less beam collimation compared to an X-25 simulator. It was our intent when designing a multi source simulator to preserve as many aspects of the X-25 while adding multi-source capability.

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

NASA Astrophysics Data System (ADS)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Absorption and emission spectra of Ga1.7Ge25As8.3S65 glasses doped with rare-earth ions

NASA Astrophysics Data System (ADS)

Lupan, E. V.; Iaseniuc, O. V.; Ciornea, V. I.; Iovu, M. S.

2016-12-01

Excellent optical properties of chalcogenide glasses make them interesting for optoelectronic devices in the visible (VIS) and, especially, in the near- and mid-infrared (NIR and MIR) spectral regions. The rare-earth (RE3+) doped Ga17Ge25As8.3S65 glasses were prepared in evacuated ( 10-5 Pa) silica-glass ampoules which were heated up to 1000 °C at 2-4°C min-1, and then the melt was quenched. The absorption and photoluminescence spectra in the visible and near IR regions for GA1.7Ge25As8.3S65 doped with rare-earth RE+) ions (Sm3+, Nd3+, Pr3+, Dy3+ and co-doped with Ho3++Dy3+) are investigated. The energy transfer of the absorbed light in the broad band Urbach region of the host glass to the RE3+ ions is suggested for increasing the emission efficiency. The investigated Ga17Ge25As8.3S65 glasses doped with RE3+ ions are promising materials for optical amplifiers operating at 1300 and 1500 nm telecommunication windows.

Germanium Enrichments in Sedimentary Rocks in Gale Crater, Mars: Constraining the Timing of Alteration and Character of the Protolith

NASA Technical Reports Server (NTRS)

Berger, J. A.; Schmidt, M. E.; Gellert, R.; Campbell, J. L.; Boyd, N. I.; Elliott, B. E.; Fisk, M. R.; King, P. L.; Ming, D. W.; Perrett, G. M.;

Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

NASA Astrophysics Data System (ADS)

Fenwick, William Edward

GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen into the subsequent GaN layer was studied in more detail. Several approaches were investigated---for example, transition layers such as Al2O3 and Al xGa1-xN/GaN---to minimize diffusion of these impurities into the GaN layer. Silicon, due to its prevalence, is the most promising material for the development of an inexpensive, large-area substrate technology. The challenge in MOCVD growth of GaN on Si is the tensile strain induced by the lattice and thermal mismatch between GaN and Si and the formation of anti-phase boundaries. Typical approaches to solve these problems involve complicated and multiple buffer layer structures, which lead to relatively slow growth rates. In this work, a thin atomic layer deposition (ALD)-grown Al2O3 interlayer was employed to relieve strain and increase material quality while also simplifying the growth process. While some residual strain was still observed in the GaN material by XRD and PL, the use of this oxide interlayer leads to an improvement in thin film quality as seen by a reduction in both crack density (<1 mm-2) on ALD-Al2O3/Si) and screw dislocation density (from 3x109cm-2 on bare Si to 2x108cm-2 on ALD-Al 2O3/Si) in the GaN films. A side-by-side comparison of GaN-based multiple quantum well LEDs grown on sapphire and on Al2O3/Si shows similar performance characteristic for both device structures. A redshift in peak emission wavelength was also observed on silicon compared to sapphire, and this is attributed to higher indium content due to the slight tensile strain in the layers on silicon. IQE of the devices on silicon is ˜32% as measured by LT-PL, compared to ˜37% on sapphire, but this difference can be assigned to the difference in indium compositions. These results show a great promise toward an inexpensive, large-area, silicon-based substrate technology for MOCVD growth of the next generation of GaN-based optoelectronic devices for SSL and other applications.

What if GE^s is Zero? Implications for GM^s and GA^s

NASA Astrophysics Data System (ADS)

Schaub, John; Pate, Stephen

2008-04-01

Because strange quarks are the lightest quarks present in nucleons via only vacuum fluctuations, studying their activities in nucleons gives us insight to the vacuum's effects on nucleon properties. These contributions can be accessed through electroweak interactions---in particular through parity-violating eN and νN elastic scattering. Recent data from parity-violating eN elastic scattering (HAPPEX, PVA4) suggests that the strange contribution to the proton electric form factor, GE^s , may be nearly zero in the range 0 < Q^2 < 1 GeV^2. We assume that GE^s is small and use existing νN data to explore the consequences for GM^s and GA^s .

Geochemical gradients in soil O-horizon samples from southern Norway: Natural or anthropogenic?

USGS Publications Warehouse

Reimann, C.; Englmaier, P.; Flem, B.; Gough, L.; Lamothe, P.; Nordgulen, O.; Smith, D.

2009-01-01

Forty soil O- and C-horizon samples were collected along a south-to-north transect extending inland for approximately 200 km from the southern tip of Norway. The elements As, Au, Bi, Cd, Cu, Ga, Ge, Hf, Hg, In, Mg, Mn, Mo, Na, Ni, Pb, Sb, Se, V, W, Zn and Zr all show a distinct decrease in concentration in soil O-horizons with increasing distance from the coast. The elements showing the strongest coastal enrichment, some by more than an order of magnitude compared to inland samples, are Au, Bi, As, Pb, Sb and Sn. Furthermore, the elements Cd (median O-/median C-horizon = 31), C, Sb, Ag, K, S, Ge (10), Hg, Pb, As, Bi, Sr (5), Se, Au, Ba, Na, Zn, P, Cu and Sn (2) are all strongly enriched in the O-horizon when compared to the underlying C-horizon. Lead isotope ratios, however, do not show any gradient with distance from the coast (declining Pb concentration). Along a 50 km topographically steep east-west transect in the centre of the survey area, far from the coast but crossing several vegetation zones, similar element enrichment patterns and concentration gradients can be observed in the O-horizon. Lead isotope ratios in the O-horizon correlate along both transects with pH and the C/N-ratio, both proxies for the quality of the organic material. Natural conditions in southern Norway, related to climate and vegetation, rather than long range atmospheric transport of air pollutants (LRT), cause the observed features. ?? 2008 Elsevier Ltd.

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

NASA Astrophysics Data System (ADS)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

Optimized alumina coagulants for water treatment

DOEpatents

Nyman, May D [Albuquerque, NM; Stewart, Thomas A [Albuquerque, NM

2012-02-21

Substitution of a single Ga-atom or single Ge-atom (GaAl.sub.12 and GeAl.sub.12 respectively) into the center of an aluminum Keggin polycation (Al.sub.13) produces an optimal water-treatment product for neutralization and coagulation of anionic contaminants in water. GaAl.sub.12 consistently shows .about.1 order of magnitude increase in pathogen reduction, compared to Al.sub.13. At a concentration of 2 ppm, GaAl.sub.12 performs equivalently to 40 ppm alum, removing .about.90% of the dissolved organic material. The substituted GaAl.sub.12 product also offers extended shelf-life and consistent performance. We also synthesized a related polyaluminum chloride compound made of pre-hydrolyzed dissolved alumina clusters of [GaO.sub.4Al.sub.12(OH).sub.24(H.sub.2O).sub.12].sup.7+.

A route to improved extraction efficiency of light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhu, H.; Shan, C. X.; Wang, L. K.; Yang, Y.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.

2010-01-01

The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

NASA Technical Reports Server (NTRS)

Lee, H. S.; Yamaguchi, M.; Elkins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2007-01-01

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors

NASA Astrophysics Data System (ADS)

Schuitemaker, P.; Houston, P. A.

1986-11-01

Open-tube diffusion techniques used between 450 and 600° C are described which involve the supply of diffusant from a vapour source (via a solution) and a solid evaporated metal source. Investigations of Zn into InP and InGaAs(P) have been undertaken using both sources. SIMS profile analyses show that in the case of the vapour source the profiles indicate a concentration-dependent diffusion coefficient while the solid source diffusions can be well described by a Gaussian-type profile. The usefulness of the vapour source method has been demonstrated in the fabrication of bipolar transistors which exhibit good d.c. characteristics. The solid source method is limited by the slow diffusion velocity and more gradual profile. The InGaAs(P)/InP materials system has important applications in optical communications and future high speed microwave and switching devices. Useful technologies allied to the introduction of impurities into Si by diffusion, have gradually been emerging for use in the III-V semiconductor family. Closed tube systems1 have been used in order to contain the volatile group V species and prevent surface erosion. In addition, simpler open tube systems2,3 have been developed that maintain a sufficient overpressure of the group V element. Zn and Cd p-dopants have been studied extensively because of the volatility and relatively large diffusion rates in III-V semiconductors. Opentube diffusion into both InP and InGaAs2-6 has been studied but little detail has appeared concerning InGaAs and InGaAsP. In this paper we describe a comprehensive study of the diffusion of Zn into InP and InGaAs(P) using both open-tube vapour source and a Au/Zn/Au evaporated solid source with SiNx acting both as a mask and also an encapsulant to prevent loss of Zn and decomposition of the substrate material. The techniques have been successfully applied to the fabrication of InP/lnGaAs heterojunction bipolar transistors which show good dc characteristics. Reference to InGaAs in the text implies the InP lattice-matched composition In0.53Ga0.47As.

Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method.

PubMed

Fang, D Q; Zhang, S L

2016-01-07

The band offsets of the ZnO/anatase TiO2 and GaN/ZnO heterojunctions are calculated using the density functional theory/generalized gradient approximation (DFT/GGA)-1/2 method, which takes into account the self-energy corrections and can give an approximate description to the quasiparticle characteristics of the electronic structure of semiconductors. We present the results of the ionization potential (IP)-based and interfacial offset-based band alignments. In the interfacial offset-based band alignment, to get the natural band offset, we use the surface calculations to estimate the change of reference level due to the interfacial strain. Based on the interface models and GGA-1/2 calculations, we find that the valence band maximum and conduction band minimum of ZnO, respectively, lie 0.64 eV and 0.57 eV above those of anatase TiO2, while lie 0.84 eV and 1.09 eV below those of GaN, which agree well with the experimental data. However, a large discrepancy exists between the IP-based band offset and the calculated natural band offset, the mechanism of which is discussed. Our results clarify band alignment of the ZnO/anatase TiO2 heterojunction and show good agreement with the GW calculations for the GaN/ZnO heterojunction.

Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mo, Xiaoming; Long, Hao; Wang, Haoning

2014-08-11

We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emissionmore » at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.« less

Activation of an intense near band edge emission from ZnTe/ZnMgTe core/shell nanowires grown on silicon.

PubMed

Wojnar, P; Szymura, M; Zaleszczyk, W; Kłopotowski, L; Janik, E; Wiater, M; Baczewski, L T; Kret, S; Karczewski, G; Kossut, J; Wojtowicz, T

2013-09-13

The absence of luminescence in the near band edge energy region of Te-anion based semiconductor nanowires grown by gold catalyst assisted molecular beam epitaxy has strongly limited their applications in the field of photonics. In this paper, an enhancement of the near band edge emission intensity from ZnTe/ZnMgTe core/shell nanowires grown on Si substrates is reported. A special role of the use of Si substrates instead of GaAs substrates is emphasized, which results in an increase of the near band edge emission intensity by at least one order of magnitude accompanied by a simultaneous reduction of the defect related luminescence. A possible explanation of this effect relies on the presence of Ga-related deep level defects in structures grown on GaAs substrates, which are absent when Si substrates are used. Monochromatic mapping of the cathodoluminescence clearly confirms that the observed emission originates, indeed, from the ZnTe/ZnMgTe core/shell nanowires, whereas individual objects are studied by means of microphotoluminescence.

Mechanism of radiative recombination in acceptor-doped bulk GaN crystals

NASA Astrophysics Data System (ADS)

Godlewski, M.; Suski, T.; Grzegory, I.; Porowski, S.; Bergman, J. P.; Chen, W. M.; Monemar, B.

1999-12-01

Optical and electrical properties of acceptor-doped bulk GaN crystals are discussed. Though introducing Zn and Ca to bulk GaN does not significantly change electron concentration, it results in the appearance of a blue photoluminescence band accompanying the relatively strong yellow band usually present. Highly resistive GaN : Mg crystals are obtained when high amount of Mg is introduced to the Ga melt during high-pressure synthesis. Change of electrical properties of Mg-doped bulk crystals is accompanied by the appearance of a strong blue emission of GaN similar to that in Ca- and Zn-doped crystals. Optically detected magnetic resonance investigations indicate a multi-band character of this blue emission and suggest possible mechanism of compensation in acceptor-doped bulk GaN.

Auger electron diffraction study of the growth of Fe(001) films on ZnSe(001)

NASA Astrophysics Data System (ADS)

Jonker, B. T.; Prinz, G. A.

1991-03-01

The growth of Fe films on ZnSe(001) epilayers and bulk GaAs(001) substrates has been studied to determine the mode of film growth, the formation of the interface, and the structure of the overlayer at the 1-10 monolayer level. Auger electron diffraction (AED), x-ray photoelectron spectroscopy (XPS), and reflection high-energy electron diffraction data are obtained for incremental deposition of the Fe(001) overlayer. The coverage dependence of the AED forward scattering peaks reveals a predominantly layer-by-layer mode of film growth at 175 °C on ZnSe, while a more three-dimensional growth mode occurs on the oxide-desorbed GaAs(001) substrate. XPS studies of the semiconductor 3d levels indicate that the Fe/ZnSe interface is less reactive than the Fe/GaAs interface.

Large enhancement of X-ray excited luminescence in Ga-doped ZnO nanorod arrays by hydrogen annealing

NASA Astrophysics Data System (ADS)

Li, Qianli; Liu, Xiaoliln; Gu, Mu; Li, Fengrui; Zhang, Juannan; Wu, Qiang; Huang, Shiming; Liu, Si

2018-03-01

Highly c-axis oriented and densely packed ZnO:Ga nanorod arrays were fabricated on ZnO-seeded substrates by hydrothermal method, and the effect of hydrogen annealing on their morphology, structure and luminescence properties was investigated in detail. Under ultraviolet or X-ray excitation, an intense ultraviolet luminescence appeared in the hydrogen-annealed samples owing to the formation of a shallow hydrogen donor state, which can sharply activate the reconbination radiation. The luminescence intensity increased with the annealing temperature, and then decreased at a higher temperature due to the dissociation of the hydrogen ion. The optimum concentration and time of hydrogen annealing were acquired simultaneously. It is expected that the ZnO:Ga nanorod array is a promising candidate for application in ultrafast and high-spatial-resolution X-ray imaging detector.

Preparation of [(68)Ga]PSMA-11 for PET-CT imaging using a manual synthesis module and organic matrix based (68)Ge/(68)Ga generator.

PubMed

Nanabala, Raviteja; Anees, Muhammed K; Sasikumar, Arun; Joy, Ajith; Pillai, M R A

2016-08-01

[(68)Ga]PSMA-11 is a relatively recently introduced radiopharmaceutical for PET-CT imaging of prostate cancer patients. The availability of (68)Ge/(68)Ga generator and PSMA-11 ligand from commercial sources is facilitating the production of the radiopharmaceutical in-house. This paper describes our experience on the preparation of ~200 batches of [(68)Ga]PSMA-11 for conducting PET-CT imaging in patients suspected/suffering from prostate cancer. The radiosynthesis of [(68)Ga]PSMA-11 was done in a hospital based nuclear medicine department using (68)Ge/(68)Ga generator and a manual synthesis module, both supplied by Isotope Technologies Garching (ITG), Germany. The production involved the reaction of 5μg (5.3nmol) of PSMA-11 ligand in 1 ml of 0.25M sodium acetate buffer with 4ml of (68)GaCl3 in 0.05M HCl for 5min at 105°C; followed by purification in a C18 cartridge and collection through a 0.22μm pore size filter. The radiochemical yields obtained were consistently high, 93.19%±3.76%, and there was hardly any batch failure. The radiochemical purity of the product was >99% and the product was stable for over 2h; however it was used in patients immediately after preparation. About 200 batches of [(68)Ga]PSMA-11 were prepared during the period and more than 300 patients received the tracer during the 14months of study. No adverse reaction was observed in any of the patients and the image qualities were consistent with literature reports. [(68)Ga]PSMA-11 with high radiochemical and radionuclidic purity is conveniently prepared by using a (68)Ge/(68)Ga generator and manual synthesis module. The radiochemical yields are very high; and activity sufficient for 3-4 patients can be prepared in a single batch; multiple batches can be done on the same day and when needed after a gap of 1.5-2h. Copyright © 2016 Elsevier Inc. All rights reserved.

Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics - a Comparative Study with Gallium Nitride

NASA Astrophysics Data System (ADS)

Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

2016-03-01

Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) - another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.

Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

PubMed Central

Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

2016-01-01

Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

Spectroscopic and thermal study of a new glass from TeO2sbnd Ga2O3sbnd GeO2 system

NASA Astrophysics Data System (ADS)

Marczewska, Agnieszka; Środa, Marcin

2018-07-01

Tellurium oxide and germanium oxide based glasses are classified as the heavy metal oxide glasses, with phonon energies below 880 cm-1. These glasses transmit to longer wavelengths when compared to borate, phosphate and silicate glasses because of the heavier mass of germanium. In this paper we present a new promising TeO2sbnd Ga2O3sbnd GeO2 glasses with high thermal stability and good optical properties in the near and mid-IR regions. The glass can be easily obtained for the wide range of Te/Ge ratio, which gives opportunity to engineering desirable properties. Based on the FT-IR spectra it could be stated that the tellurite network is monotonically transformed into germanate one as the GeO2 content increases. Admixtures of GeO2 into the network of tellurite glass causes the conversion of [TeO4] to [TeO3] units. Thus, the network of the glass could be consider as a mixture of the [TeO4], [TeO3] and [GeO4] units and with Ga3+ ions playing the role of its modifier. The glasses demonstrate high transmittance in mid-IR up to 6 μm what makes these materials suitable for mid-IR applications.

Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance

NASA Astrophysics Data System (ADS)

Kunzer, M.; Baur, J.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.

1997-02-01

We have studied the photoluminescence (PL) and optically detected magnetic resonance (ODMR) of undoped, n-doped and p-doped thin wurtzite GaN layers grown by metal-organic chemical vapor deposition on sapphire substrates. The ODMR data obtained for undoped. Mg-doped and Zn-doped GaN layers provide an insight into the recombination mechanisms responsible for the broad yellow (2.25 eV), the violet (3.15 eV) and the blue (2.8 eV) PL bands, respectively. The ODMR results for Mg and Zn also show that these acceptors do not behave effective mass like and indicate that the acceptor hole is mainly localized in the nearest neighbor shell surrounding the acceptor core. In addition concentration effects in heavily doped GaN:Mg have been studied.

Structural classification of RAO3( MO) n compounds ( R =Sc, In, Y, or lanthanides; A =Fe(III), Ga, Cr, or Al; M =divalent cation; n = 1-11)

NASA Astrophysics Data System (ADS)

Kimizuka, Noboru; Mohri, Takahiko

1989-01-01

A series of new compounds RAO3( MO) n ( n = 1-11) having spinel, YbFe 2O 4, or InFeO 3(ZnO) n types of structures were newly synthesized ( R =Sc, In, Y, Lu, Yb, Tm, or Er; A =Fe(III), Ga, Cr, or Al; M =Mg, Mn, Fe(II), Co, Ni, Zn, or Cd) at elevated temperatures. The conditions of synthesis and the lattice constants for these compounds are reported. The stacking sequences of the InO 1.5, (FeZn)O 2.5, and ZnO layers for InFeO 3(ZnO) 10 and the TmO 1.5, (AlZn)O 2.5, and ZnO layers for TmAlO 3(ZnO) 11 are presented, respectively. The crystal structures of the( RAO3) m( MO) n phases ( R =Sc, In, Y, or lanthanide elements; A =Fe(III), Ga, Cr, or Al; M =divalent cation elements; m and n =integer) are classified into four crystal structure types (K 2NiF 4, CaFe 2O 4, YbFe 2O 4, and spinel), based upon the constituent cations R, A, and M