Platelets to rings: Influence of sodium dodecyl sulfate on Zn-Al layered double hydroxide morphology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yilmaz, Ceren; Unal, Ugur; Koc University, Chemistry Department, Rumelifeneri yolu, Sariyer 34450, Istanbul

2012-03-15

In the current study, influence of sodium dodecyl sulfate (SDS) on the crystallization of Zn-Al layered double hydroxide (LDH) was investigated. Depending on the SDS concentration coral-like and for the first time ring-like morphologies were obtained in a urea-hydrolysis method. It was revealed that the surfactant level in the starting solution plays an important role in the morphology. Concentration of surfactant equal to or above the anion exchange capacity of the LDH is influential in creating different morphologies. Another important parameter was the critical micelle concentration (CMC) of the surfactant. Surfactant concentrations well above CMC value resulted in ring-like structures.more » The crystallization mechanism was discussed. - Graphical abstract: Dependence of ZnAl LDH Morphology on SDS concentration. Highlights: Black-Right-Pointing-Pointer In-situ intercalation of SDS in ZnAl LDH was achieved via urea hydrolysis method. Black-Right-Pointing-Pointer Morphology of ZnAl LDH intercalated with SDS depended on the SDS concentration. Black-Right-Pointing-Pointer Ring like morphology for SDS intercalated ZnAl LDH was obtained for the first time. Black-Right-Pointing-Pointer Growth mechanism was discussed. Black-Right-Pointing-Pointer Template assisted growth of ZnAl LDH was proposed.« less

In-situ growth of ZIF-8 on layered double hydroxide: Effect of Zn/Al molar ratios on their structural, morphological and adsorption properties.

PubMed

Yang, Yingli; Yan, Xinlong; Hu, Xiaoyan; Feng, Rui; Zhou, Min

2017-11-01

In-situ growth of Zeolite imidazolate frameworks (ZIFs) on layered double hydroxides (LDHs) to form porous composites is a promising and challenging strategy to develop materials for separation application. Herein, the Zn-Al LDH with different Zn/Al molar ratios was prepared and used as matrix for the growth of ZIF-8 on its surface. The resulting composites were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), N 2 physisorption, thermogravimetric (TG), scanning electron microscope (SEM) and elemental analysis followed by testing for As V removal from aqueous solution. Results showed that ZIF-8 could form on the surface of LDH with different Zn/Al molar ratios. At low Zn/Al molar ratios, the morphology and surface area of the ZIF/LDH composites and the content of ZIF-8 in the composites were little affected by the Zn/Al molar ratio. With increasing Zn/Al molar ratio, ZIF-8/LDH exhibited a lower surface area, which resulted from reduced content of ZIF-8 caused by impurities generated in the LDH matrix. All ZIF-8/LDH samples showed high As V adsorption capacity, which was significantly higher than that of pure LDH or ZIF-8. Copyright © 2017 Elsevier Inc. All rights reserved.

Zinc-aluminum oxide solid solution nanosheets obtained by pyrolysis of layered double hydroxide as the photoanodes for dye-sensitized solar cells.

PubMed

Xu, Zhiyuan; Shi, Jingjing; Haroone, Muhammad Sohail; Chen, Wenpeng; Zheng, Shufang; Lu, Jun

2018-04-01

Due to the superiority of metal-doped ZnO compared to TiO 2 , the Zn-M (M = Al 3+ , Ga 3+ , Cr 3+ , Ti 4+ , Ce 4+ ) mixed metal oxide solid solutions have been extensively studied for photocatalytic and photovoltaic applications. In this work, a systematic research has proceeded for the preparation of a zinc-aluminum oxide semiconductor as a photoanode for the dye-sensitized solar cells (DSSCs) by a simple pyrolysis route with the Zn-Al layered double hydroxide (LDH) as a precursor. The Zn-Al oxide solid solution has been applied for DSSCs as an electron acceptor, which is used to study the influence of different Al content and sintering temperature on the device efficiency. Finally, the Zn-Al oxide solid solution with calcination temperature 600 °C and Al 27 at.% content exhibits the best performance. The photoelectric efficiency improved 100 times when the Al 3+ content decreased from 44 to 27 at.%. The Zn x Al y O solid solution show a reasonable efficiency as photoanode materials in DSSCs, with the best preliminary performance reported so far, and shows its potential application for the photovoltaic devices. Copyright © 2018 Elsevier Inc. All rights reserved.

Synthesis, structure refinement and chromate sorption characteristics of an Al-rich bayerite-based layered double hydroxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britto, Sylvia, E-mail: sylviabritto11@gmail.com; Kamath, P. Vishnu

2014-07-01

“Imbibition” of Zn{sup 2+} ions into the cation vacancies of bayerite–Al(OH){sub 3} and NO{sub 3}{sup −} ions into the interlayer gallery yields an Al-rich layered double hydroxide with Al/Zn ratio ∼3. NO{sub 3}{sup −} ions are intercalated with their molecular planes inclined at an angle to the plane of the metal hydroxide slab and bonded to it by hydrogen bonds. Rietveld refinement of the structure shows that the monoclinic symmetry of the precursor bayerite is preserved in the product, showing that the imbibition is topochemical in nature. The nitrate ion is labile and is quantitatively replaced by CrO{sub 4}{sup 2−}more » ions from solution. The uptake of CrO{sub 4}{sup 2−} ions follows a Langmuir adsorption isotherm, thus showing that the hydroxide is a candidate material for green chemistry applications for the removal of CrO{sub 4}{sup 2−} ions from waste water. Rietveld refinement of the structure of the hydroxide after CrO{sub 4}{sup 2−} inclusion reveals that the CrO{sub 4}{sup 2−} ion is intercalated with one of its 2-fold axes parallel to the b-crystallographic axis of the crystal, also the principal 2 axis of the monoclinic cell. - Graphical abstract: The structure of the [Zn–Al4-nitrate] LDH viewed along the a-axis. - Highlights: • Synthesis of Al-rich layered double hydroxide with Al/Zn ratio ∼3. • Rietveld refinement indicates that the imbibition of Zn into Al(OH){sub 3} is topochemical in nature. • The uptake of CrO{sub 4}{sup 2−} ions follows a Langmuir adsorption isotherm.« less

Drug delivery system for an anticancer agent, chlorogenate-Zn/Al-layered double hydroxide nanohybrid synthesised using direct co-precipitation and ion exchange methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barahuie, Farahnaz; Hussein, Mohd Zobir, E-mail: mzobir@putra.upm.edu.my; Arulselvan, Palanisamy

A nano-structured drug-inorganic clay hybrid involving an active anticancer compound, which is chlorogenic acid (CA) intercalated into Zn/Al-layered double hydroxide, has been assembled via ion-exchange and co-precipitation methods to form a nanohybrid CZAE (a chlorogenic acid-Zn/Al nanohybrid synthesised using an ion-exchange method) and CZAC (a chlorogenic acid-Zn/Al nanohybrid synthesised using a direct method), respectively. The X-ray diffraction (XRD) results confirmed that the CA-LDH had a hybrid structure in which the anionic chlorogenate is arranged between the interlayers as a horizontal monolayer at 90 and 20° angles from the x axis for CZAE and CZAC, respectively. Both nanohybrids have the propertiesmore » of mesoporous materials. The high loading percentage of chlorogenic acid (approximately 43.2% for CZAE and 45.3% for CZAC) with basal spacings of 11.7 and 12.6 Å for CZAE and CZAC, respectively, corroborates the successful intercalation of chlorogenic acid into the interlayer gallery of layered double hydroxides. Free chlorogenic acid and the synthesised nanocomposites (CZAE, CZAC) were assessed for their cytotoxicity against various cancer cells. The Fourier transform infrared data supported the formation of both nanohybrids, and a thermal analysis showed that the nanohybrids are more thermally stable than their counterparts. The chlorogenate shows a sustained release, and the release rate of chlorogenate from CZAE and CZAC nanohybrids at pH 7.4 is remarkably lower than that at pH 4.8 due to their different release mechanisms. The release rate of chlorogenate from both nanohybrids can be described as pseudo-second order. The present investigation revealed the potential of the nanohybrids to enhance the in vitro anti-tumour effect of chlorogenic acid in liver and lung cancer cells in vitro. - Highlights: • We intercalated chlorogenic into Zn/Al-layered double hydroxide by ion-exchange and coprecipitation methods. • The two methods gave nanocomposites with slightly different physico-chemical properties. • Chlorogenate-zinc aluminium layered double hydroxide nanohybrids have the potential to be used as a controlled release formulation. • The thermal stability of chlorogenic acid is markedly enhanced upon the intercalation process. • The inhibition of cancer cell growth is higher for nanohybrids than for free chlorogenic acid.« less

Layered double hydroxide materials coated carbon electrode: New challenge to future electrochemical power devices

NASA Astrophysics Data System (ADS)

Djebbi, Mohamed Amine; Braiek, Mohamed; Namour, Philippe; Ben Haj Amara, Abdesslem; Jaffrezic-Renault, Nicole

2016-11-01

Layered double hydroxides (LDHs) have been widely used in the past years due to their unique physicochemical properties and promising applications in electroanalytical chemistry. The present paper is going to focus exclusively on magnesium-aluminum and zinc-aluminum layered double hydroxides (MgAl & ZnAl LDHs) in order to investigate the property and structure of active cation sites located within the layer structure. The MgAl and ZnAl LDH nanosheets were prepared by the constant pH co-precipitation method and uniformly supported on carbon-based electrode materials to fabricate an LDH electrode. Characterization by powder x-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and transmission electron microscopy revealed the LDH form and well-crystallized materials. Wetting surface properties (hydrophilicity and hydrophobicity) of both prepared LDHs were recorded by contact angle measurement show hydrophilic character and basic property. The electrochemical performance of these hybrid materials was investigated by mainly cyclic voltammetry, electrochemical impedance spectroscopy and chronoamperometry techniques to identify the oxidation/reduction processes at the electrode/electrolyte interface and the effect of the divalent metal cations in total reactivity. The hierarchy of the modified electrode proves that the electronic conductivity of the bulk material is considerably dependent on the divalent cation and affects the limiting parameter of the overall redox process. However, MgAl LDH shows better performance than ZnAl LDH, due to the presence of magnesium cations in the layers. Following the structural, morphological and electrochemical behavior studies of both synthesized LDHs, the prepared LDH modified electrodes were tested through microbial fuel cell configuration, revealing a remarkable, potential new pathway for high-performance and cost-effective electrode use in electrochemical power devices.

In situ oligomerization of 2-(thiophen-3-yl)acetate intercalated into Zn{sub 2}Al layered double hydroxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tronto, Jairo, E-mail: jairotronto@ufv.br; Pinto, Frederico G.; Costa, Liovando M. da

2015-01-15

A layered double hydroxide (LDH) with cation composition Zn{sub 2}Al was intercalated with 2-(thiophen-3-yl)acetate (3-TA) monomers. To achieve in situ polymerization and/or oligomerization of the intercalated monomers, soft thermal treatments were carried out, and subsequent hybrid LDH materials were analyzed by means of several characterization techniques using powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA), {sup 13}C CP–MAS nuclear magnetic resonance (NMR), electron spin resonance (EPR), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), inductively coupled plasma optical emission spectroscopy (ICP–OES), and elemental analysis. PXRD analysis suggested that the intercalated monomers formed a bilayer. Thermalmore » treatment of the hybrid LDH assembly above 120 °C provokes partially the breakdown of the layered structure, generating the phase zincite. EPR results indicated that vicinal monomers (oligomerization) were bound to each other after hydrothermal or thermal treatment, leading to a polaron response characteristic of electron conductivity localized on a restricted number of thiophene-based monomer segments. Localized unpaired electrons exist in the material and interact with the {sup 27}Al nuclei of the LDH layers by superhyperfine coupling. These unpaired electrons also interact with the surface of ZnO (O{sup 2−} vacancies), formed during the thermal treatments. - Graphical abstract: We synthesized a layered double hydroxide (LDH) with cation composition Zn{sub 2}Al, intercalated with 2-(thiophen-3-yl)acetate (3-TA) monomers, by coprecipitation at constant pH. We thermally treated the material, to achieve in situ polymerization and/or oligomerization of the intercalated monomers. - Highlights: • A Zn{sub 2}Al–LDH was intercalated with 2-(thiophen-3-yl)acetate monomers. • To achieve in situ oligomerization of the monomers, thermal treatments were made. • Thermal treatment above 120 °C causes partially breakdown of the LDH structure. • ESR results indicated a polaron response characteristic of electron conductivity.« less

Plasmonic photocatalysts based on silver nanoparticles - layered double hydroxides for efficient removal of toxic compounds using solar light

NASA Astrophysics Data System (ADS)

Gilea, Diana; Radu, Teodora; Muresanu, Mihaela; Carja, Gabriela

2018-06-01

Plasmon-enhanced photocatalysis holds important promise for chemical processes and outcomes. We present here the self-assemblies of silver nanoparticles (AgNP)/layered double hydroxides (LDHs: MeAlLDHs with Me2+ = Zn2+;Mg2+) and their derived AgNP/MMOs (type AgNP/MgAl2O4; AgNP/ZnO/ZnAl2O4) as novel plasmonic photocatalysts exhibiting activity for phenol photodegradation from aqueous solution by solar-light. The fabrication procedure of AgNP/LDHs assemblies is simple and cost effective and is based on the in-situ synthesis of AgNP on the LDHs matrices during the reconstruction of MgAlLDH and ZnAlLDH in the aqueous solution of Ag2SO4. The tested catalysts were thoroughly investigated - techniques to obtain information on their crystalline structure (XRD), surface properties (XPS), morphological features (TEM) and optical properties (UV-vis). The results show that the solar photocatalytic response of the catalysts is ascribed to the plasmonic response of AgNP though the catalytic efficiency is strongly influenced by the composition of the MeAlLDHs. The best photocatalytic performance was obtained on AgNP/ZnAlLDH750 catalyst that degraded 100% of phenol after 80 min of irradiation with solar light. The results reveal the high potential to tailor AgNP/LDHs and AgNP/MMOs as efficient photo-functional plasmonic hybrids for waste-water cleaning.

Mg-Al and Zn-Fe layered double hydroxides used for organic species storage and controlled release.

PubMed

Seftel, E M; Cool, P; Lutic, D

2013-12-01

Layered double hydroxides (LDH) containing (Mg and Al) or (Zn and Fe) were prepared by coprecipitation at constant pH, using NaOH and urea as precipitation agents. The most pure LDH phase in the Zn/Fe system was obtained with urea and in Mg/Al system when using NaOH. The incorporation of phenyl-alanine (Phe) anions in the interlayer of the LDH was performed by direct coprecipitation, ionic exchange and structure reconstruction of the mixed oxide obtained by the calcination of the coprecipitated product at 400°C. The reconstruction method and the direct coprecipitation in a medium containing Phe in the initial mixture were less successful in terms of high yields of organic-mineral composite than the ionic exchange method. A spectacular change in sample morphology and yield in exchanged solid was noticed for the Zn3Fe sample obtained by ionic exchange for 6h with Phe solution. A delivery test in PBS of pH=7.4 showed the release of the Phe in several steps up to 25 h indicating different host-guest interactions between the Phe and the LDH matrix. This behavior makes the preparation useful to obtain late delivery drugs, by the incorporation of the anion inside the LDH layer. © 2013.

Preparation of 5-benzotriazolyl-4-hydroxy-3- sec-butylbenzenesulfonate anion-intercalated layered double hydroxide and its photostabilizing effect on polypropylene

NASA Astrophysics Data System (ADS)

Li, Dianqing; Tuo, Zhenjun; Evans, David G.; Duan, Xue

2006-10-01

An organic UV absorber has been intercalated into a layered double hydroxide (LDH) host by ion-exchange method using ZnAl-NO 3-LDH as a precursor with an aqueous solution of the sodium salt of 5-benzotriazolyl-4-hydroxy-3- sec-butylbenzenesulfonic acid (BZO). After intercalation of the UV absorber, the interlayer distance in the LDHs increases from 0.89 to 2.32 nm. Infrared spectra and thermogravimetry and differential thermal analysis (TG-DTA) curves reveal the presence of a complex system of supramolecular host-guest interactions. The thermostability of BZO is markedly enhanced by intercalation in the LDH host. ZnAl-BZO-LDHs/polypropylene composite materials exhibit excellent UV photostability.

Organo/Zn-Al LDH Nanocomposites for Cationic Dye Removal from Aqueous Media

NASA Astrophysics Data System (ADS)

Starukh, G.; Rozovik, O.; Oranska, O.

2016-04-01

Cationic dye sorption by Zn-Al-layered double hydroxides (LDHs) modified with anionic surfactants was examined using methylene blue (MB) dye as a compound model in aqueous solutions. The modification of Zn-Al LDHs was performed by reconstruction method using dodecyl sulfate anion (DS) solutions. DS contained Zn-Al LDHs were characterized by XRD, FTIR, thermogravimetric, and SEM analysis. The reconstructed organo/Zn-Al LDHs comprise the crystalline phases (DS-intercalated LDHs, hydrotalcite), and the amorphous phase. The intercalation of DS ions into the interlayer galleries and DS adsorption on the surface of the LDHs occurred causing the MB adsorption on the external and its sorption in the internal surfaces of modified LDHs. The presence of DS greatly increased the affinity of organo/Zn-Al LDHs for MB due to hydrophobic interactions between the surfactants and the dye molecules. The optical properties of sorbed MB were studied.

Accessing the biocompatibility of layered double hydroxide by intramuscular implantation: histological and microcirculation evaluation

PubMed Central

Cunha, Vanessa Roberta Rodrigues; de Souza, Rodrigo Barbosa; da Fonseca Martins, Ana Maria Cristina Rebello Pinto; Koh, Ivan Hong Jun; Constantino, Vera Regina Leopoldo

2016-01-01

Biocompatibility of layered double hydroxides (LDHs), also known as hydrotalcite-like materials or double metal hydroxides, was investigated by in vivo assays via intramuscular tablets implantation in rat abdominal wall. The tablets were composed by chloride ions intercalated into LDH of magnesium/aluminum (Mg2Al-Cl) and zinc/aluminum (Zn2Al-Cl). The antigenicity and tissue integration capacity of LDHs were assessed histologically after 7 and 28 days post-implantation. No fibrous capsule nearby the LDH was noticed for both materials as well any sign of inflammatory reactions. Sidestream Dark Field imaging, used to monitor in real time the microcirculation in tissues, revealed overall integrity of the microcirculatory network neighboring the tablets, with no blood flow obstruction, bleeding and/or increasing of leukocyte endothelial adhesion. After 28 days Mg2Al-Cl promoted multiple collagen invaginations (mostly collagen type-I) among its fragments while Zn2Al-Cl induced predominantly collagen type–III. This work supports previous results in the literature about LDHs compatibility with living matter, endorsing them as functional materials for biomedical applications. PMID:27480483

Accessing the biocompatibility of layered double hydroxide by intramuscular implantation: histological and microcirculation evaluation.

PubMed

Cunha, Vanessa Roberta Rodrigues; de Souza, Rodrigo Barbosa; da Fonseca Martins, Ana Maria Cristina Rebello Pinto; Koh, Ivan Hong Jun; Constantino, Vera Regina Leopoldo

2016-08-02

Biocompatibility of layered double hydroxides (LDHs), also known as hydrotalcite-like materials or double metal hydroxides, was investigated by in vivo assays via intramuscular tablets implantation in rat abdominal wall. The tablets were composed by chloride ions intercalated into LDH of magnesium/aluminum (Mg2Al-Cl) and zinc/aluminum (Zn2Al-Cl). The antigenicity and tissue integration capacity of LDHs were assessed histologically after 7 and 28 days post-implantation. No fibrous capsule nearby the LDH was noticed for both materials as well any sign of inflammatory reactions. Sidestream Dark Field imaging, used to monitor in real time the microcirculation in tissues, revealed overall integrity of the microcirculatory network neighboring the tablets, with no blood flow obstruction, bleeding and/or increasing of leukocyte endothelial adhesion. After 28 days Mg2Al-Cl promoted multiple collagen invaginations (mostly collagen type-I) among its fragments while Zn2Al-Cl induced predominantly collagen type-III. This work supports previous results in the literature about LDHs compatibility with living matter, endorsing them as functional materials for biomedical applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Starcher, Autumn N.; Elzinga, Evert J.; Sparks, Donald L.

Previous research demonstrated the formation of single divalent metal (Co, Ni, and ZnAl) and mixed divalent metal (NiZnAl) layered double hydroxide (LDH) phases from reactions of the divalent metal with Al-bearing substrates and soils in both laboratory experiments and in the natural environment. Recently Fe(II)-Al-LDH phases have been found in laboratory batch reaction studies, and although they have yet to be found in the natural environment. Potential locations of Fe(II)-Al-LDH phases in nature include areas with suboxic and anoxic conditions. Because these areas can be environments of significant contaminant accumulation, it is important to understand the possible interactions and impactsmore » of contaminant elements on LDH phase formation. One such contaminant, Zn, can also form as an LDH and has been found to form as a mixed divalent layered hydroxide phase. To understand how Zn impacts the formation of Fe(II)-Al-LDH phase formation and kinetics, 3 mM or 0.8 mM Fe(II) and 0.8 mM Zn were batch reacted with either 10 g/L pyrophyllite or 7.5 g/L γ-Al2O3 for up to three months under anoxic conditions. Aqueous samples were analyzed by inductively coupled plasma optical emission spectrometry (ICP-OES) and solid samples were analyzed with X-ray absorption spectroscopy (XAS). Shell-by-shell fits of Fe(II) and co-sorption samples with pyrophyllite show the formation of a mixed divalent metal (Fe(II)-Zn-Al) layered hydroxide phase, while Fe(II) and Zn co-sorption samples with γ-Al2O3 produce Fe(II)-Al-LDH phases and Zn in inner-sphere complexation with the γ-Al2O3. This study demonstrates the formation of a mixed divalent metal layered hydroxide and further iterates the importance of sorbent reactivity on LDH phase formation.« less

Synthesis of layered double hydroxides containing Mg2+, Zn2+, Ca2+ and Al3+ layer cations by co-precipitation methods-A review

NASA Astrophysics Data System (ADS)

Theiss, Frederick L.; Ayoko, Godwin A.; Frost, Ray L.

2016-10-01

Co-precipitation is a common method for the preparation of layered double hydroxides (LDHs) and related materials. This review article is aimed at providing newcomers to the field with some examples of the types of co-precipitation reactions that have been reported previously and to briefly investigate some of the properties of the products of these reactions. Due to the sheer volume of literature on the subject, the authors have had to limit this article to the synthesis of Mg/Al, Zn/Al and Ca/Al LDHs by co-precipitation and directly related methods. LDHs have been synthesised from various reagents including metal salts, oxides and hydroxides. Co-precipitation is also useful for the direct synthesis of LDHs with a wide range of interlayer anions and various bases have been successfully employed to prepare LDHs. Examples of other synthesis techniques including the urea method, hydrothermal synthesis and various mechanochemical methods that are undoubtedly related to co-precipitation have also been included in this review. The effect of post synthesis hydrothermal has also been summarised.

Facile preparation of fluorescent layered double hydroxide polymeric composites through the photo-induced surface-initiated controlled living polymerization

NASA Astrophysics Data System (ADS)

Chen, Junyu; Liu, Meiying; Huang, Qiang; Jiang, Ruming; Huang, Hongye; Deng, Fengjie; Wen, Yuanqing; Tian, Jianwen; Zhang, Xiaoyong; Wei, Yen

2018-05-01

(Zn/Al) layered double hydroxide (LDH) based fluorescence probes have been facilely fabricated via photo-induced surface-initiated reversible addition-fragmentation chain transfer (RAFT) polymerization, which demonstrated green fluorescence, good biocompatibility and excellent dispersion performance in aqueous solution. The as prepared (Zn/Al)LDH polymeric composites were modified with 2-methacryloyloxyethyl phosphorylcholine (MPC), acrylic acid (AA) and diacroloyl-fluorescein (Ac-Fl). Among them, the comonomers MPC and AA were used to endow their water dispersibility, biocompatibility and potential drug carriers, while the Ac-Fl was served both as the fluorescence signal and photocatalyst for RAFT polymerization. A series of characterization methods, including 1H nuclear magnetic resonance spectroscopy, Fourier transform infrared spectroscopy, transmission electronic microscopy, thermogravimetric analyses, X-ray photoelectron spectroscopy were employed to conform the successful of surface modification of LDH through photo-induced surface-initiated RAFT polymerization. Besides, UV-vis absorption spectra and fluorescence spectra were adopted to evaluate the optical characteristics of as prepared (Zn/Al)LDH-co-Poly(MPC-AA-Fl) composites, which exhibited high intense green fluorescence. Furthermore, the endocytosis behavior indicates that (Zn/Al)LDH-co-Poly(MPC-AA-Fl) composites could be potentially used in cell imaging and even drug delivery application for their excellent biocompatibility and all advantages described above.

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions.

PubMed

Zhang, Peng; Zhang, Wu; Wang, Junyong; Jiang, Kai; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

2017-06-30

Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO 2 )/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the reflectance spectra presents the wheel phenomenon rather than increases monotonically with temperature at near-infrared region range. The strong interference effects was found in the hybrid multilayer heterojunction. In addition, the phase transition temperature decreases with increasing the number of the Al:ZnO layer, which can be ascribed to the electron injection to the VO 2 film from the Al:ZnO interface. Affected by the double layer Al:ZnO, the abnormal Raman vibration mode was presented in the insulator region. By adding the external voltage on the Al 2 O 3 /Al:ZnO/VO 2 /Al:ZnO, Al 2 O 3 /Al:ZnO/VO 2 and Al 2 O 3 /VO 2 /Al:ZnO thin-film devices, the infrared optical spectra of the devices can be real-time manipulated by an external voltage. The main effect of joule heating and assistant effect of electric field are illustrated in this work. It is believed that the results will add a more thorough understanding in the application of the VO 2 /transparent conductive film device.

Thermally induced growth of ZnO nanocrystals on mixed metal oxide surfaces.

PubMed

Inayat, Alexandra; Makky, Ayman; Giraldo, Jose; Kuhnt, Andreas; Busse, Corinna; Schwieger, Wilhelm

2014-06-23

An in situ method for the growth of ZnO nanocrystals on Zn/Al mixed metal oxide (MMO) surfaces is presented. The key to this method is the thermal treatment of Zn/Al layered double hydroxides (Zn/Al LDHs) in the presence of nitrate anions, which results in partial demixing of the LDH/MMO structure and the subsequent crystallization of ZnO crystals on the surface of the forming MMO layers. In a first experimental series, thermal treatment of Zn/Al LDHs with different fractions of nitrate and carbonate in the interlayer space was examined by thermogravimetry coupled with mass spectrometry (TG-MS) and in situ XRD. In a second experimental series, Zn/Al LDHs with only carbonate in the interlayer space were thermally treated in the presence of different amounts of an external nitrate source (NH4NO3). All obtained Zn/Al MMO samples were analysed by electron microscopy, nitrogen physisorption and powder X-ray diffraction. The gas phase formed during nitrate decomposition turned out to be responsible for the formation of crystalline ZnO nanoparticles. Accordingly, both interlayer nitrate and the presence of ammonium nitrate led to the formation of supported ZnO nanocrystals with mean diameters between 100 and 400 nm, and both methods offer the possibility to tailor the amount and size of the ZnO crystals by means of the amount of nitrate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis, characterization, and controlled release anticorrosion behavior of benzoate intercalated Zn-Al layered double hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yi; Zhang, Dun, E-mail: zhangdun@qdio.ac.cn

2011-11-15

Graphical abstract: The benzoate anion released from Zn-Al LDHs provides a more effective long-term protection against corrosion of Q235 carbon steel in 3.5% NaCl solution. Highlights: {yields} A benzoate anion corrosion inhibitor intercalated Zn-Al layered double hydroxides (LDHs) has been assembled by coprecipitation method. {yields} The kinetic simulation indicates that the ion-exchange one is responsible for the release process and the diffusion through particle is the rate limiting step. {yields} A significant reduction of the corrosion rate is observed when the LDH nanohybrid is present in the corrosive media. -- Abstract: Corrosion inhibitor-inorganic clay composite including benzoate anion intercalated Zn-Almore » layered double hydroxides (LDHs) are assembled by coprecipitation. Powder X-ray diffraction (XRD) and Fourier transform infrared (FT-IR) spectrum analyses indicate that the benzoate anion is successfully intercalated into the LDH interlayer and the benzene planes are vertically bilayer-positioned as a quasi-guest ion-pair form in the gallery space. Kinetic simulation for the release data, XRD and FT-IR analyses of samples recovered from the release medium indicate that ion-exchange is responsible for the release process and diffusion through the particle is also indicated to be the rate-limiting step. The anticorrosion capabilities of LDHs loaded with corrosion inhibitor toward Q235 carbon steel are analyzed by polarization curve and electrochemical impedance spectroscopy methods. Significant reduction of corrosion rate is observed when the LDH nanohybrid is present in the corrosive medium. This hybrid material may potentially be applied as a nanocontainer in self-healing coatings.« less

Zn-Al layered double hydroxide prepared at different molar ratios: Preparation, characterization, optical and dielectric properties

NASA Astrophysics Data System (ADS)

Ahmed, Abdullah Ahmed Ali; Talib, Zainal Abidin; bin Hussein, Mohd Zobir; Zakaria, Azmi

2012-07-01

The co-precipitation method was used to prepare Zn-Al-NO3-LDH at different Zn2+/Al3+ molar ratios (2, 3, 4, 5 and 6) and pH value of 7.5. The structure, textural, composition and morphological properties were investigated using powder X-ray diffraction (PXRD), thermogravimetric analysis (TGA), Fourier transform infrared (FT-IR) and scanning electron microscope (SEM), respectively. The crystallinity of LDH samples were found to improve as molar ratio decreased which is attributed to the distortion of the hydroxide layers networks of the LDH crystal by the larger difference in ionic radii of Zn2+ and Al3+. The optical band gap energy of LDH samples were evaluated using absorbance data from UV-Vis-NIR Diffuse reflectance spectroscopy. Band gaps were affected by the variation of the Zn2+/Al3+ molar ratio is due to the formation of the low crystalline phases (ZnO and ZnAl2O4). The water molecules and anionic NO3- in the LDH interlayer were responsible for the generation of the dielectric response. This response can be described by an anomalous low frequency dispersion using the second type of Universal Power Law. The dominance of ZnO dipoles and charge carriers (NO3- ions) in the dielectric relaxation increases with the increasing molar ratio.

Chemical reactive features of novel amino acids intercalated layered double hydroxides in As(III) and As(V) adsorption.

PubMed

Shen, Liang; Jiang, Xiuli; Chen, Zheng; Fu, Dun; Li, Qingbiao; Ouyang, Tong; Wang, Yuanpeng

2017-06-01

Layered double hydroxides (LDHs) intercalated with amino acids such as methionine (Met) were synthesized as new adsorbents to remediate arsenic-polluted water. This Zn 2 Al-Met-LDHs, identified with the formula of Zn 0.7 Al 0.3 (OH) 2 (Met) 0.3 ·0.32H 2 O, has good thermal stability. Adsorption experiments with Zn 2 Al-Met-LDHs showed that the residual arsenic in solution could be reduced below the regulation limit, and this adsorption process fitted Langmuir isotherm and the pseudo-second-order kinetics well. A remarkably high removal efficiency and the maximum adsorption capacity for As(III) were achieved, 96.7% and 94.1 mg/g, respectively, at 298 K. The desorption efficiency of As(III) from the arsenic-saturated Zn 2 Al-Met-LDHs (<8.7%), far less than that of As(V), promises a specific and reliable uptake of As(III) in sorts of solutions. More importantly, a complete and in-depth spectra analysis through FTIR, XPS and NMR was conducted to explain the excellent performance of Zn 2 Al-Met-LDHs in arsenic removal. Herein, two special chemical reactions were proposed as the dominant mechanisms, i.e., hydrogen bonding between the carboxyl group of the host Met and the hydroxyl group of As(III) or As(V), and the formation of a chelate ring between the guest As(III) and the S, N bidentate ligands of the intercalated Met in the LDHs. Copyright © 2017 Elsevier Ltd. All rights reserved.

Improved High-Energy Response of AlGaAs/GaAs Solar Cells Using a Low-Cost Technology

NASA Astrophysics Data System (ADS)

Noorzad, Camron D.; Zhao, Xin; Harotoonian, Vache; Woodall, Jerry M.

2016-12-01

We report on an AlGaAs/GaAs solar cell with a significantly increased high-energy response that was produced via a modified liquid phase epitaxy (LPE) technique. This technique uses a one-step process in which the solid-liquid equilibrium Al-Ga-As:Zn melt in contact with an n-type vendor GaAs substrate simultaneously getters impurities in the substrate that shorten minority carrier lifetimes, diffuses Zn into the substrate to create a p- n junction, and forms a thin p-AlGaAs window layer that enables more high-energy light to be efficiently absorbed. Unlike conventional LPE, this process is performed isothermally. In our "double Al" method, the ratio of Al in the melt ("Al melt ratio") that was used in our process was two times more than what was previously reported in the record 1977 International Business Machines (IBM) solar cell. Photoluminescence (PL) results showed our double Al sample yielded a response to 405 nm light ("blue light"), which was more than twice as intense as the response from our replicated IBM cell. The original 1977 cell had a low-intensity spectral response to photon wavelengths under 443 nm (Woodall and Hovel in Sol Energy Mater Sol Cells 29:176, 1990). Secondary ion mass spectrometry results confirmed the increased blue light response was due to a large reduction in AlGaAs window layer thickness. These results proved increasing the Al melt ratio broadens the spectrum of light that can be transmitted through the window layer into the active GaAs region for absorption, increasing the overall solar cell efficiency. Our enhanced double Al method can pave the way for large-scale manufacturing of low-cost, high-efficiency solar cells.

Advanced light-scattering materials: Double-textured ZnO:B films grown by LP-MOCVD

NASA Astrophysics Data System (ADS)

Addonizio, M. L.; Spadoni, A.; Antonaia, A.

2013-12-01

Double-textured ZnO:B layers with enhanced optical scattering in both short and long wavelength regions have been successfully fabricated using MOCVD technique through a three step process. Growth of double-textured structures has been induced by wet etching on polycrystalline ZnO surface. Our double-layer structure consists of a first ZnO:B layer wet etched and subsequently used as substrate for a second ZnO:B layer deposition. Polycrystalline ZnO:B layers were etched by utilizing diluted solutions of fluoridic acid (HF), chloridric acid (HCl) and phosphoric acid (H3PO4) and their effect on surface morphology modification was systematically investigated. The morphology of the second deposited ZnO layer strongly depended on the surface properties of the etched ZnO first layer. Growth of cauliflower-like texture was induced by protrusions presence on the HCl etched surface. Optimized double-layer structure shows a cauliflower-like double texture with higher RMS roughness and increased spectral haze values in both short and long wavelength regions, compared to conventional pyramidal-like single texture. Furthermore, this highly scattering structure preserves excellent optical and electrical properties.

Cu2+ ions as a paramagnetic probe to study the surface chemical modification process of layered double hydroxides and hydroxide salts with nitrate and carboxylate anions.

PubMed

Arizaga, Gregorio Guadalupe Carbajal; Mangrich, Antonio Salvio; Wypych, Fernando

2008-04-01

A layered zinc hydroxide nitrate (Zn5(OH)8(NO3)2.2H2O) and a layered double hydroxide (Zn/Al-NO3) were synthesized by coprecipitation and doped with different amounts of Cu2+ (0.2, 1, and 10 mol%), as paramagnetic probe. Although the literature reports that the nitrate ion is free (with D3h symmetry) between the layers of these two structures, the FTIR spectra of two zinc hydroxide nitrate samples show the C2v symmetry for the nitrate ion, whereas the g ||/A || value in the EPR spectra of Cu2+ is high. This fact suggests bonding of some nitrate ions to the layers of the zinc hydroxide nitrate. The zinc hydroxide nitrate was used as matrix in the intercalation reaction with benzoate, o-chlorobenzoate, and o-iodobenzoate ions. FTIR spectra confirm the ionic exchange reaction and the EPR spectroscopy reveals bonding of the organic ions to the inorganic layers of the zinc hydroxide nitrate, while the layered double hydroxides show only exchange reactions.

Preparation and enhanced properties of polyaniline/grafted intercalated ZnAl-LDH nanocomposites

NASA Astrophysics Data System (ADS)

Hu, Jinlong; Gan, Mengyu; Ma, Li; Zhang, Jun; Xie, Shuang; Xu, Fenfang; Shen, JiYue Zheng Xiaoyu; Yin, Hui

2015-02-01

The polymeric nanocomposites (PANI/AD-LDH) were prepared by in situ polymerization based on polyaniline (PANI) and decavanadate-intercalated and γ-aminopropyltriethoxysilane (APTS)-grafted ZnAl-layered double hydroxide (AD-LDH). FTIR and XRD studies confirm the grafting of APTS with decavanadate-intercalated LDH (D-LDH). The extent of grafting (wt%) has also been estimated on the basis of the residue left in nitrogen atmosphere at 800 °C in TGA. SEM and XPS studies show the partial exfoliation of grafted LDH in the PANI matrix and the interfacial interaction between PANI and grafted LDH, respectively. The grafted intercalated layered double hydroxide in reinforcing the properties of the PANI nanocomposites has also been investigated by open circuit potential (OCP), tafel polarization curves (TAF), electrochemical impendence spectroscopy (EIS), salt spray test and TGA-DTA. The experimental results indicate that the PANI/AD-LDH has a higher thermal stability and anticorrosion properties relative to the PANI.

Drug delivery system for an anticancer agent, chlorogenate-Zn/Al-layered double hydroxide nanohybrid synthesised using direct co-precipitation and ion exchange methods

NASA Astrophysics Data System (ADS)

Barahuie, Farahnaz; Hussein, Mohd Zobir; Arulselvan, Palanisamy; Fakurazi, Sharida; Zainal, Zulkarnain

2014-09-01

A nano-structured drug-inorganic clay hybrid involving an active anticancer compound, which is chlorogenic acid (CA) intercalated into Zn/Al-layered double hydroxide, has been assembled via ion-exchange and co-precipitation methods to form a nanohybrid CZAE (a chlorogenic acid-Zn/Al nanohybrid synthesised using an ion-exchange method) and CZAC (a chlorogenic acid-Zn/Al nanohybrid synthesised using a direct method), respectively. The X-ray diffraction (XRD) results confirmed that the CA-LDH had a hybrid structure in which the anionic chlorogenate is arranged between the interlayers as a horizontal monolayer at 90 and 20° angles from the x axis for CZAE and CZAC, respectively. Both nanohybrids have the properties of mesoporous materials. The high loading percentage of chlorogenic acid (approximately 43.2% for CZAE and 45.3% for CZAC) with basal spacings of 11.7 and 12.6 Å for CZAE and CZAC, respectively, corroborates the successful intercalation of chlorogenic acid into the interlayer gallery of layered double hydroxides. Free chlorogenic acid and the synthesised nanocomposites (CZAE, CZAC) were assessed for their cytotoxicity against various cancer cells. The Fourier transform infrared data supported the formation of both nanohybrids, and a thermal analysis showed that the nanohybrids are more thermally stable than their counterparts. The chlorogenate shows a sustained release, and the release rate of chlorogenate from CZAE and CZAC nanohybrids at pH 7.4 is remarkably lower than that at pH 4.8 due to their different release mechanisms. The release rate of chlorogenate from both nanohybrids can be described as pseudo-second order. The present investigation revealed the potential of the nanohybrids to enhance the in vitro anti-tumour effect of chlorogenic acid in liver and lung cancer cells in vitro.

Synthesis and reversible hydration behavior of the thiosulfate intercalated layered double hydroxide of Zn and Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radha, S.; Milius, Wolfgang; Breu, Josef, E-mail: josef.breu@uni-bayreuth.de

2013-08-15

The thiosulfate-intercalated layered double hydroxide of Zn and Al undergoes reversible hydration with a variation in the relative humidity of the ambient. The hydrated and dehydrated phases, which represent the end members of the hydration cycle, both adopt the structure of the 3R{sub 1} polytype. In the intermediate range of relative humidity values (40–60%), the hydrated and dehydrated phases coexist. The end members of the hydration cycle adopt the structure of the same polytype, and vary only in their basal spacings. This points to the possibility that all the intermediate phases have a kinetic origin. - Graphical abstract: Basal spacingmore » evolution of the thiosulfate ion intercalated [Zn–Al] LDH during one complete hydration–dehydration cycle as a function of relative humidity. Display Omitted - Highlights: • Thiosulfate intercalated [Zn–Al] LDHs were synthesized by co-precipitation. • The LDH exhibits reversible hydration with variation in humidity. • Both the end members of the hydration cycle adopt the same polytype structure. • The interstratified intermediates observed are kinetic in origin.« less

The Effect of Single, Binary and Ternary Anions of Chloride, Carbonate and Phosphate on the Release of 2,4-Dichlorophenoxyacetate Intercalated into the Zn-Al-layered Double Hydroxide Nanohybrid

NASA Astrophysics Data System (ADS)

Hussein, Mohd Zobir; Jaafar, Adila Mohamad; Yahaya, Asmah Hj.; Zainal, Zulkarnain

2009-11-01

Intercalation of beneficial anion into inorganic host has lead to an opportunity to synthesize various combinations of new organic-inorganic nanohybrids with various potential applications; especially, for the controlled release formulation and storage purposes. Investigation on the release behavior of 2,4-dichlorophenoxyacetate (2,4-D) intercalated into the interlayer of Zn-Al-layered double hydroxide (ZAN) have been carried out using single, binary and ternary aqueous systems of chloride, carbonate and phosphate. The release behavior of the active agent 2,4-D from its double-layered hydroxide nanohybrid ZANDI was found to be of controlled manner governed by pseudo-second order kinetics. It was found that carbonate medium yielded the highest accumulated release of 2,4-D, while phosphate in combination with carbonate and/or nitrate speeds up the release rate of 2,4-D. These results indicate that it is possible to design and develop new delivery system of latex stimulant compound with controlled release property based on 2,4-D that is known as a substance to increase latex production of rubber tree, Hevea brasiliensis.

Zn-Al layered double hydroxide prepared at different molar ratios: Preparation, characterization, optical and dielectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Abdullah Ahmed Ali; Talib, Zainal Abidin, E-mail: zainalat@science.upm.edu.my; Zobir bin Hussein, Mohd

2012-07-15

The co-precipitation method was used to prepare Zn-Al-NO{sub 3}-LDH at different Zn{sup 2+}/Al{sup 3+} molar ratios (2, 3, 4, 5 and 6) and pH value of 7.5. The structure, textural, composition and morphological properties were investigated using powder X-ray diffraction (PXRD), thermogravimetric analysis (TGA), Fourier transform infrared (FT-IR) and scanning electron microscope (SEM), respectively. The crystallinity of LDH samples were found to improve as molar ratio decreased which is attributed to the distortion of the hydroxide layers networks of the LDH crystal by the larger difference in ionic radii of Zn{sup 2+} and Al{sup 3+}. The optical band gap energymore » of LDH samples were evaluated using absorbance data from UV-Vis-NIR Diffuse reflectance spectroscopy. Band gaps were affected by the variation of the Zn{sup 2+}/Al{sup 3+} molar ratio is due to the formation of the low crystalline phases (ZnO and ZnAl{sub 2}O{sub 4}). The water molecules and anionic NO{sub 3}{sup -} in the LDH interlayer were responsible for the generation of the dielectric response. This response can be described by an anomalous low frequency dispersion using the second type of Universal Power Law. The dominance of ZnO dipoles and charge carriers (NO{sub 3}{sup -} ions) in the dielectric relaxation increases with the increasing molar ratio. - Graphical abstract: (a) Schematic diagram of Zn-Al- NO{sub 3}-LDH shows the LDH structure, (b) Kubelka-Munk transformed reflectance spectra and c. The dielectric constant versus frequency of Zn-Al- NO{sub 3}-LDH samples. Highlights: Black-Right-Pointing-Pointer Zn-Al-NO{sub 3}-LDH was prepared at different Zn{sup 2+}/Al{sup 3+} molar ratios (2, 3, 4, 5 and 6). Black-Right-Pointing-Pointer The crystallinity of LDH phase decreased with increase of Zn{sup 2+}/Al{sup 3+} molar ratio. Black-Right-Pointing-Pointer The optical band gaps of LDH samples have been measured. Black-Right-Pointing-Pointer Dielectric response of LDH can be described by anomalous low frequency dispersion.« less

EFFECT OF Mg AND TEMPERATURE ON Fe-Al ALLOY LAYER IN Fe/(Zn-6%Al-x%Mg) SOLID-LIQUID DIFFUSION COUPLES

NASA Astrophysics Data System (ADS)

Liang, Liu; Liu, Ya-Ling; Liu, Ya; Peng, Hao-Ping; Wang, Jian-Hua; Su, Xu-Ping

Fe/(Zn-6%Al-x%Mg) solid-liquid diffusion couples were kept at various temperatures for different periods of time to investigate the formation and growth of the Fe-Al alloy layer. Scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and X-ray diffraction (XRD) were used to study the constituents and morphology of the Fe-Al alloy layer. It was found that the Fe2Al5Znx phase layer forms close to the iron sheet and the FeAl3Znx phase layer forms near the side of the melted Zn-6%Al-3%Mg in diffusion couples. When the Fe/(Zn-6%Al-3%Mg) diffusion couple is kept at 510∘C for more than 15min, a continuous Fe-Al alloy layer is formed on the interface of the diffusion couple. Among all Fe/(Zn-6%Al-x%Mg) solid-liquid diffusion couples, the Fe-Al alloy layer on the interface of the Fe/(Zn-6% Al-3% Mg) diffusion couple is the thinnest. The Fe-Al alloy layer forms only when the diffusion temperature is above 475∘. These results show that the Fe-Al alloy layer in Fe/(Zn-6%Al-x%Mg) solid-liquid diffusion couples is composed of Fe2Al5Znx and FeAl3Znx phase layers. Increasing the diffusing temperature and time period would promote the formation and growth of the Fe-Al alloy layer. When the Mg content in the Fe/(Zn-6%Al-x%Mg) diffusion couples is 3%, the growth of the Fe-Al alloy layer is inhibited. These results may explain why there is no obvious Fe-Al alloy layer formed on the interface of steel with a Zn-6%Al-3%Mg coating.

Designing optical metamaterial with hyperbolic dispersion based on Al:ZnO/ZnO nano-layered structure using Atomic Layer Deposition technique

DOE PAGES

Kelly, Priscilla; Liu, Mingzhao; Kuznetsova, Lyuba

2016-04-07

In this study, nano-layered Al:ZnO/ZnO hyperbolic dispersion metamaterial with a large number of layers was fabricated using the atomic layer deposition (ALD) technique. Experimental dielectric functions for Al:ZnO/ZnO structures are obtained by an ellipsometry technique in the visible and near-infrared spectral ranges. The theoretical modeling of the Al:ZnO/ZnO dielectric permittivity is done using effective medium approximation. A method for analysis of spectroscopic ellipsometry data is demonstrated to extract the optical permittivity for this highly anisotropic nano-layered metamaterial. The results of the ellipsometry analysis show that Al:ZnO/ZnO structures with a 1:9 ALD cycle ratio exhibit hyperbolic dispersion transition change near 1.8more » μm wavelength.« less

Improving the properties of zinc oxide thin-film surface acoustic wave device on glass substrate by introducing double alumina layers

NASA Astrophysics Data System (ADS)

Shih, Wen-Ching; Huang, Yi-Fan; Wu, Mu-Shiang

2017-10-01

ZnO films with c-axis (0002) orientation have been successfully grown by RF magnetron sputtering on Al2O3/glass substrates. The alumina films were firstly deposited on glass substrates, and then secondly deposited on interdigital transducer/ZnO film/alumina film/glass substrates by electron beam evaporation. The crystalline structure and surface roughness of the films were investigated by X-ray diffraction and atomic force microscopy, respectively. The phase velocity and coupling coefficient of the surface acoustic wave (SAW) device were both increased when we deposited the double alumina layers. On the other hand, the temperature coefficient of frequency becomes better if we increase the thickness of the lower alumina film. The experimental result is beneficial for improving the performance of the ZnO thin-film SAW devices on inexpensive glass substrates.

Synthesis of protocatechuic acid-zinc/aluminium-layered double hydroxide nanocomposite as an anticancer nanodelivery system

NASA Astrophysics Data System (ADS)

Barahuie, Farahnaz; Hussein, Mohd Zobir; Gani, Shafinaz Abd; Fakurazi, Sharida; Zainal, Zulkarnain

2015-01-01

Protocatechuic acid, an active anticancer agent, has been intercalated into Zn/Al-layered double hydroxide at Zn/Al=2) using two different preparation methods, co-precipitation and ion-exchange, which are labelled as PZAE and PZAC, respectively. The release of protocatechuate from the nanocomposites occurred in a controlled manner and was fitted satisfactorily to pseudo-second order kinetics. The basal spacing of the resulting nanocomposites PZAE and PZAC was 10.2 and 11.0 Å, respectively, indicating successful intercalation of protocatechuate anions into the interlayer galleries of Zn/Al-NO3-LDH in a monolayer arrangement with angles of 24 and 33° from the z-axis in PZAE and PZAC, respectively. The formation of nanocomposites was further confirmed by a Fourier transform infrared study. Thermogravimetric and differential thermogravimetric analyses indicated that the thermal stability of the intercalated protocatechuic acid was significantly enhanced compared to its free protocatechuic acid, and the drug content in the nanocomposites was estimated to be approximately 32.6% in PZAE and 29.2% in PZAC. Both PZAE and PZAC nanocomposites inhibit the growth of human cervical, liver and colorectal cancer cell lines and exhibit no toxic effects towards normal fibroblast 3T3 cell after 72 h of treatment.

Synthesis, characterization and photocatalytic activity of mixed oxides derived from ZnAlTi ternary layered double hydroxides

NASA Astrophysics Data System (ADS)

Sahu, R. K.; Mohanta, B. S.; Das, N. N.

2013-09-01

A new series of Ti4+ containing ZnAl-LDHs with varying Zn:Al:Ti (~3:1:0-3:0.5:0.5) ratio were prepared by coprecipitation of homogeneous solution metal salts and characterized by various physicochemical methods. Powder XRD revealed the formation of well crystallized LDH even at the highest Ti4+ content. On thermal treatment at 450 °C, the well crystallized LDH precursors yielded mixed oxides with BET surface area in the range 92-118 m2/g. UV-vis diffuse reflection spectroscopy (DRS) showed a marginal decrease of band gap energy for calcined ZnAlTi-LDHs in comparison to either ZnO or TiO2-P25. The TEM analyses of a representative sample (as-synthesized and calcined) indicated more or less uniform distribution of titanium species. The derived mixed oxides from titanium containing LDH precursors demonstrated better activity toward photodegradation of methylene blue and rhodamine B than those of a physical mixture of ZnO and TiO2. Moreover, the present work not only provided a first hand understanding about semiconductor properties of ZnAlTi-LDHs but also demonstrated their potential as photocatalysts for degradation of organic pollutants.

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

Layered double hydroxide films on nanoporous anodic aluminum oxide/aluminum wire: a new fiber for rapid analysis of Origanum vulgare essential oils.

PubMed

Piryaei, Marzieh

2018-01-01

Zn/Al layered double hydroxide (LDH) films were fabricated in situ with anodic aluminium oxide aluminium as both the substrate and the sole aluminium source by means of urea hydrolysis. Headspace solid phase microextraction using LDH fibre in combination with capillary GC-MS was utilised as a monitoring technique for the collection and detection of the volatile compounds of Origanum vulgare. Experimental parameters, including the sample weight, microwave power, extraction time and humidity effect, were examined and optimised.

Enhanced sensitivity to dielectric function and thickness of absorbing thin films by combining total internal reflection ellipsometry with standard ellipsometry and reflectometry

NASA Astrophysics Data System (ADS)

Lizana, A.; Foldyna, M.; Stchakovsky, M.; Georges, B.; Nicolas, D.; Garcia-Caurel, E.

2013-03-01

High sensitivity of spectroscopic ellipsometry and reflectometry for the characterization of thin films can strongly decrease when layers, typically metals, absorb a significant fraction of the light. In this paper, we propose a solution to overcome this drawback using total internal reflection ellipsometry (TIRE) and exciting a surface longitudinal wave: a plasmon-polariton. As in the attenuated total reflectance technique, TIRE exploits a minimum in the intensity of reflected transversal magnetic (TM) polarized light and enhances the sensitivity of standard methods to thicknesses of absorbing films. Samples under study were stacks of three films, ZnO : Al/Ag/ZnO : Al, deposited on glass substrates. The thickness of the silver layer varied from sample to sample. We performed measurements with a UV-visible phase-modulated ellipsometer, an IR Mueller ellipsometer and a UV-NIR reflectometer. We used the variance-covariance formalism to evaluate the sensitivity of the ellipsometric data to different parameters of the optical model. Results have shown that using TIRE doubled the sensitivity to the silver layer thickness when compared with the standard ellipsometry. Moreover, the thickness of the ZnO : Al layer below the silver layer can be reliably quantified, unlike for the fit of the standard ellipsometry data, which is limited by the absorption of the silver layer.

Removal of phosphorus by the core-shell bio-ceramic/Zn-layered double hydroxides (LDHs) composites for municipal wastewater treatment in constructed rapid infiltration system.

PubMed

Zhang, Xiangling; Guo, Lu; Huang, Hualing; Jiang, Yinghe; Li, Meng; Leng, Yujie

2016-06-01

Constructed rapid infiltration systems (CRIS) are a reasonable option for treating wastewater, owing to their simplicity, low cost and low energy consumption. Layered double hydroxides (LDHs), novel materials with high surface area and anion exchange capacity, faced the problem of the application in CRIS due to the powdered form. To overcome this shortcoming, Zn-LDHs (FeZn-LDHs, CoZn-LDHs, AlZn-LDHs) were prepared by co-precipitation method and in-situ coated on the surface of the natural bio-ceramic to synthesize the core-shell bio-ceramic/Zn-LDHs composites. Characterization by Scanning Electron Microscope (SEM) and X-ray Fluorescence Spectrometer (XRFS) indicated that the Zn-LDHs were successful loaded on the natural bio-ceramic. Column tests experiments indicated that the bio-ceramic/Zn-LDHs efficiently enhanced the removal performance of phosphorus. The efficiently removal rates of bio-ceramic/FeZn-LDHs were 71.58% for total phosphorous (TP), 74.91% for total dissolved phosphorous (TDP), 82.31% for soluble reactive phosphorous (SRP) and 67.58% for particulate phosphorus (PP). Compared with the natural bio-ceramic, the average removal rates were enhanced by 32.20% (TP), 41.33% (TDP), 49.06% (SRP) and 10.50% (PP), respectively. Adsorption data of phosphate were better described by the Freundlich model for the bio-ceramic/Zn-LDHs and natural bio-ceramic, except for the bio-ceramic/CoZn-LDHs. The maximum adsorption capacity of bio-ceramic/AlZn-LDHs (769.23 mg/kg) was 1.77 times of the natural bio-ceramic (434.78 mg/kg). The effective desorption of phosphate could achieve by using a mixed solution of 5 M NaCl + 0.1 M NaOH, it outperformed the natural bio-ceramic of 18.95% for FeZn-LDHs, 7.59% for CoZn-LDHs and 12.66% for AlZn-LDHs. The kinetic data of the bio-ceramic/Zn-LDHs were better described by the pseudo-second-order equation. Compared the removal amount of phosphate by the natural bio-ceramic, the physical effects were improved little, but the chemical effects were enhanced for 112.49% for FeZn-LDHs, 111.89% for CoZn-LDHs and 122.67% for AlZn-LDHs. Therefore, the way of coating Zn-LDHs on the bio-ceramic efficiently improved the chemical effects in phosphate removal, supporting that it can use as potential substrates for the removal of phosphorus in CRIS. Copyright © 2016 Elsevier Ltd. All rights reserved.

Fabrication of a novel NiFe2O4/Zn-Al layered double hydroxide intercalated with EDTA composite and its adsorption behavior for Cr(VI) from aqueous solution

NASA Astrophysics Data System (ADS)

Deng, Lin; Shi, Zhou; Wang, Li; Zhou, Shiqing

2017-05-01

A novel magnetic NiFe2O4/Zn-Al layered double hydroxide intercalated with EDTA composite (NiFe2O4/ZnAl-EDTA LDH) was prepared through modified coprecipitation method and employed for adsorptive removal of Cr(VI) from aqueous solution. The adsorbents were characterized using Brunauer-Emmett-Teller (BET), scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), vibrating sample magnetometer (VSM), and X-ray photoelectron spectroscopy (XPS). Factors affecting the Cr(VI) adsorption, such as initial solution pH, adsorbent dosage, contact time, initial Cr(VI) concentration, temperature and coexisting ions, were studied systematically. Experiments results show that the magnetic NiFe2O4/ZnAl-EDTA LDH exhibits high adsorption efficiency within a wide pH range of 3.0-7.0 (R>80% at Cr(VI) concentration 50 mg L-1, contact time 360 min, and adsorbent dosage 2 g/L) and quick separation property. The adsorption process is fitted well with the Langmuir isotherm and pseudo-second-order kinetic model. The maximum theoretical adsorption capacity is found to be 77.22 mg g-1 at pH 6.0 and 318 K. The positive ΔH value (2.907 kJ mol-1) and negative ΔG value (-4.722 kJ mol-1) at 298-318 K reveals that the adsorption process is feasible, spontaneous and endothermic. Coexisting anions (PO43-, SO42-, CO32-, HCO3-, Cl-, and NO3-) have no significant effect on Cr(VI) removal. The mechanism study indicates that the adsorption of Cr(VI) onto NiFe2O4/ZnAl-EDTA LDH mainly involves electrostatic attraction and ion exchange interaction. It is interesting to note that a proportion of Cr(VI) adsorbed on the adsorbent surface are reduced to Cr(III) during the adsorption process. Results from this study demonstrate the potential utility of the magnetic NiFe2O4/ZnAl-EDTA LDH that could be developed into a viable technology for efficient removal of Cr(VI) from aqueous solution.

Enhanced Corrosion Resistance of Superhydrophobic Layered Double Hydroxide Films with Long-Term Stability on Al Substrate.

PubMed

Cao, Yanhui; Zheng, Dajiang; Li, Xueliang; Lin, Jinyan; Wang, Cheng; Dong, Shigang; Lin, Changjian

2018-05-02

A superhydrophobic ZnAl-layered double hydroxide (LDH)-La film was prepared by a hydrothermal method and further modification by laurate anions in this work. Comprehensive characterizations of this film were performed in terms of morphology, composition, structure, roughness, and wettability by scanning electronic microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, three-dimensional laser scanning confocal microscopy. The long-term corrosion protection effect of this superhydrophobic film was investigated deeply by monitoring the changes of the electrochemical impedance spectra for a long time of up to a month in 3.5 wt % NaCl solution. In the meantime, the changes of the contact angle were also recorded with the evolution of the immersion time. The result indicated that the stable superhydrophobic ZnAl-LDH-La film was able to provide efficient protection for the underlying Al substrate for a long time. In addition, the capability of the superhydrophobic surface against harsh conditions, including chemical damages and physical damages, was emphatically investigated. It was found that the superhydrophobic surface was chemically stable toward acid (pH ≥ 3), alkali, and heating, and it also exhibited high ultraviolet (UV) radiation resistance. This superhydrophobic coating maintained superhydrophobicity for 7 days of radiation in an UV chamber equipped with a 40 W UV lamp (λ = 254 nm), indicating superior ability of adapting to outdoor environment. This comprehensive investigation of the superhydrophobic ZnAl-LDH-La film is considerably helpful for researchers and engineers to get deep insight into its potential for practical applications in the field of corrosion and protection.

Evaluation of layered zinc hydroxide nitrate and zinc/nickel double hydroxide salts in the removal of chromate ions from solutions

NASA Astrophysics Data System (ADS)

de Oliveira, Henrique Bortolaz; Wypych, Fernando

2016-11-01

Layered zinc hydroxide nitrate (ZnHN) and Zn/Ni layered double hydroxide salts were synthesized and used to remove chromate ions from solutions at pH 8.0. The materials were characterized by many instrumental techniques before and after chromate ion removal. ZnHN decomposed after contact with the chromate solution, whereas the layered structure of Zn/Ni hydroxide nitrate (Zn/NiHN) and Zn/Ni hydroxide acetate (Zn/NiHA) remained their layers intact after the topotactic anionic exchange reaction, only changing the basal distances. ZnHN, Zn/NiHN, and Zn/NiHA removed 210.1, 144.8, and 170.1 mg of CrO42-/g of material, respectively. Although the removal values obtained for Zn/NiHN and Zn/NiHA were smaller than the values predicted for the ideal formulas of the solids (194.3 and 192.4 mg of CrO42-/g of material, respectively), the measured capacities were higher than the values achieved with many materials reported in the literature. Kinetic experiments showed the removal reaction was fast. To facilitate the solid/liquid separation process after chromium removal, Zn/Ni layered double hydroxide salts with magnetic supports were also synthesized, and their ability to remove chromate was evaluated.

Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al contentmore » in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less

A full-spectrum photocatalyst with strong near-infrared photoactivity derived from synergy of nano-heterostructured Er3+-doped multi-phase oxides.

PubMed

Chen, Huabin; Liu, Wenxia; Hu, Bin; Qin, Zhuozhuo; Liu, Hong

2017-12-07

The development of full-spectrum photocatalysts active in the near-infrared (NIR) region has gained increasing attention in the photodegradation of organic pollutants. Herein, we designed a full-spectrum photocatalyst with strong NIR photoactivity based on the synergy of Er 3+ -doped ZnO-CuO-ZnAl 2 O 4 multi-phase oxides (Er 3+ -doped Zn/Cu/Al-MPO) via the formation of n-p-n double heterojunctions. The photocatalyst was prepared by synthesizing nanosheets of a Zn/Cu/Al/Er hydrotalcite-like compound (Zn/Cu/Al/Er-HLC) with a co-precipitation method followed by calcination of the nanosheets at 800 °C. The as-prepared Er 3+ -doped Zn/Cu/Al-MPO inherits the nanosheet morphology of Zn/Cu/Al/Er-HLC, and displays over-doubled photoactivity in the entire ultraviolet (UV), visible and NIR regions compared to undoped Zn/Cu/Al-MPO. The excellent photocatalytic activity of Er 3+ -doped Zn/Cu/Al-MPO, especially its strong NIR photoactivity, is ascribed to its Er 3+ -doped CuO-involved multi-crystalline phase heterostructure, i.e., n-p-n double heterojunctions, which does not only offer an enhanced NIR absorption but also promotes the separation of photogenerated charge carriers. Importantly, the synergy of all the parts of the n-p-n double heterojuctions plays an important role in interface band structure regulation for the enhancement of the photocatalytic properties of Er 3+ -doped Zn/Cu/Al-MPO. This work has demonstrated the feasibility of utilizing hydrotalcite-like precursors in the design of full-spectrum photocatalysts active in the NIR region.

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mezdrogina, M. M., E-mail: margaret.m@mail.ioffe.ru; Krivolapchuk, V. V., E-mail: vlad.krivol@mail.ioffe.ru; Feoktistov, N. A.

2008-07-15

Luminescence intensity of heterostructures based on n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) is higher by more than an order of magnitude than the corresponding intensity of separate n-ZnO, p-GaN:(Er + Zn), and AlGaN:(Er + Zn) layers. Most likely, this phenomenon is due to the effective tunneling recombination of charge carriers caused by a decrease in the concentration of the nonradiative recombination centers located between the n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) layers.

Degradability enhancement of poly(lactic acid) by stearate-Zn(3)Al LDH nanolayers.

PubMed

Eili, Mahboobeh; Shameli, Kamyar; Ibrahim, Nor Azowa; Yunus, Wan Md Zin Wan

2012-01-01

Recent environmental problems and societal concerns associated with the disposal of petroleum based plastics throughout the world have triggered renewed efforts to develop new biodegradable products compatible with our environment. This article describes the preparation, characterization and biodegradation study of poly(lactic acid)/layered double hydroxide (PLA/LDH) nanocomposites from PLA and stearate-Zn(3)Al LDH. A solution casting method was used to prepare PLA/stearate-Zn(3)Al LDH nanocomposites. The anionic clay Zn(3)Al LDH was firstly prepared by co-precipitation method from a nitrate salt solution at pH 7.0 and then modified by stearate anions through an ion exchange reaction. This modification increased the basal spacing of the synthetic clay from 8.83 Å to 40.10 Å. The morphology and properties of the prepared PLA/stearate-Zn(3)Al LDH nanocomposites were studied by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), thermogravimetric analysis (TGA), tensile tests as well as biodegradation studies. From the XRD analysis and TEM observation, the stearate-Zn(3)Al LDH lost its ordered stacking-structure and was greatly exfoliated in the PLA matrix. Tensile test results of PLA/stearate-Zn(3)Al LDH nanocomposites showed that the presence of around 1.0-3.0 wt % of the stearate-Zn(3)Al LDH in the PLA drastically improved its elongation at break. The biodegradation studies demonstrated a significant biodegradation rate improvement of PLA in the presence of stearate-Zn(3)Al LDH nanolayers. This effect can be caused by the catalytic role of the stearate groups in the biodegradation mechanism leading to much faster disintegration of nanocomposites than pure PLA.

Degradability Enhancement of Poly(Lactic Acid) by Stearate-Zn3Al LDH Nanolayers

PubMed Central

Eili, Mahboobeh; Shameli, Kamyar; Ibrahim, Nor Azowa; Yunus, Wan Md Zin Wan

2012-01-01

Recent environmental problems and societal concerns associated with the disposal of petroleum based plastics throughout the world have triggered renewed efforts to develop new biodegradable products compatible with our environment. This article describes the preparation, characterization and biodegradation study of poly(lactic acid)/layered double hydroxide (PLA/LDH) nanocomposites from PLA and stearate-Zn3Al LDH. A solution casting method was used to prepare PLA/stearate-Zn3Al LDH nanocomposites. The anionic clay Zn3Al LDH was firstly prepared by co-precipitation method from a nitrate salt solution at pH 7.0 and then modified by stearate anions through an ion exchange reaction. This modification increased the basal spacing of the synthetic clay from 8.83 Å to 40.10 Å. The morphology and properties of the prepared PLA/stearate-Zn3Al LDH nanocomposites were studied by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), thermogravimetric analysis (TGA), tensile tests as well as biodegradation studies. From the XRD analysis and TEM observation, the stearate-Zn3Al LDH lost its ordered stacking-structure and was greatly exfoliated in the PLA matrix. Tensile test results of PLA/stearate-Zn3Al LDH nanocomposites showed that the presence of around 1.0–3.0 wt % of the stearate-Zn3Al LDH in the PLA drastically improved its elongation at break. The biodegradation studies demonstrated a significant biodegradation rate improvement of PLA in the presence of stearate-Zn3Al LDH nanolayers. This effect can be caused by the catalytic role of the stearate groups in the biodegradation mechanism leading to much faster disintegration of nanocomposites than pure PLA. PMID:22942682

The Phase Relations in the In 2O 3-Al 2ZnO 4-ZnO System at 1350°C

NASA Astrophysics Data System (ADS)

Nakamura, Masaki; Kimizuka, Noboru; Mohri, Takahiko; Isobe, Mitsumasa

1993-08-01

Phase relations in the In 2O 3-Al 2ZnO 4-ZnO system at 1350°C are determined by a classical quenching method. This system consists of In 2O 3, Al 2ZnO 4, ZnO, and homologous phases InAlO 3(ZnO) m ( m = 2, 3, …) having solid solutions with LuFeO 3(ZnO) m-type crystal structures. These solid solution ranges are as follows: In 1+ x1Al 1- x1O 3(ZnO) 2 ( x1 = 0.70)-In 1+ x2Al 1- x2O 3(ZnO) 2 ( x2 = 0.316-0.320), In 2O 3(ZnO) 3-In 1+ xAl 1- xO 3(ZnO) 3 ( x = 0.230), In 2O 3(ZnO) 4-In 1+ xAl 1- xO 3(ZnO) 4 ( x = 0.15-0.16), In 2O 3(ZnO) 5-In 1+ xAl 1- xO 3(ZnO) 5 ( x = 0.116-0.130), In 2O 3(ZnO) 6-In 1+ xAl 1- xO 3(ZnO) 6 ( x = 0.000-0.111), In 2O 3(ZnO) 7-In 1+ xAl 1- xO 3(ZnO) 7 ( x = 0.08), In 2O 3(ZnO) 8-In 1+ xAl 1- xO 3(ZnO) 8 ( x: undetermined), and In 2O 3(ZnO) m-InAlO 3(ZnO) m ( m = 9, 10, 11, 13, 15, 17, and 19). The space groups of these homologous phases belong to R3¯ m for m = odd or P6 3/ mmc for m = even. Their crystal structures, In 1+ xAl 1- xO 3(ZnO) m (0 < x < 1), consist of three kinds of layers: an InO 1.5 layer, an (In xAl 1- xZn)O 2.5 layer, and ZnO layers. A comparison of the phase relations in the In 2O 3- M2ZnO 4-ZnO systems ( M = Fe, Ga, or Al) is made and their characteristic features are discussed in terms of the ionic radii and site preferences of the M cations.

Synthesising methods of layered double hydroxides and its use in the fabrication of dye Sensitised solar cell (DSSC): A short review

NASA Astrophysics Data System (ADS)

George, Giphin; Saravanakumar, M. P.

2017-11-01

The layered double hydroxides (LDH) which are anionic clay substances comprising of stacked cationic layers and interlayer anions. The cationic sheets contain octahedral structure consisting the divalent and trivalent ions in the center and hydroxyl bunches in the corners, gathered by three bonding with the neighbouring octahedra on every side of the layer. The ratio between the quantity of cations and OH- ions is 2:1, so a positive charge shows up on the layer because of the presence of trivalent cations. The interlayer space gives the compensation anions and water molecules, assuring a balanced out layered structure. The LDH materials were successfully synthesised from magnesium, aluminium, zinc and chromium chloride salts utilizing the co-precipitation technique. A Zn-Al LDH was researched as a potential sorbent material. This article reviews the recent advances in the preparation and intercalation of layered double hydroxides and its application in the fabrication of Dye Sensitized Solar Cell (DSSC).

ANTS-anchored Zn-Al-CO3-LDH particles as fluorescent probe for sensing of folic acid

NASA Astrophysics Data System (ADS)

Liu, Pengfei; Liu, Dan; Liu, Yanhuan; Li, Lei

2016-09-01

A novel fluorescent nanosensor for detecting folic acid (FA) in aqueous media has been developed based on 8-aminonaphthalene-1,3,6-trisulfonate (ANTS) anchored to the surface of Zn-Al-CO3-layered double hydroxides (LDH) particles. The nanosensor showed high fluorescence intensity and good photostability due to a strong coordination interaction between surface Zn2+ ions of Zn-Al-CO3-LDH and N atoms of ANTS, which were verified by result of X-ray photoelectron spectroscopy (XPS). ANTS-anchored on the surface of Zn-Al-CO3-LDH restricted the intra-molecular rotation leading to ANTS-anchored J-type aggregation emission enhancement. ANTS-anchored Zn-Al-CO3-LDH particles exhibited highly sensitive and selective response to FA over other common metal ions and saccharides present in biological fluids. The proposed mechanism was that oxygen atoms of -SO3 groups in ANTS-anchored on the surface of Zn-Al-CO3-LDH were easily collided by FA molecules to form potential hydrogen bonds between ANTS-anchored and FA molecules, which could effectively quench the ANTS-anchored fluorescence. Under the simulated physiological conditions (pH of 7.4), the fluorescence quenching was fitted to Stern-Volmer equation with a linear response in the concentration range of 1 μM to 200 μM with a limit of detection of 0.1 μM. The results indicate that ANTS-anchored Zn-Al-CO3-LDH particles can afford a very sensitive system for the sensing FA in aqueous solution.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

PubMed

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

Alizarin red S dye removal from contaminated water on calcined [Mg/Al, Zn/Al and MgZn/Al]-LDH

NASA Astrophysics Data System (ADS)

Aissat, Miloud; Hamouda, Sara; Benhadria, Naceur; Chellali, Rachid; Bettahar, Noureddine

2018-05-01

The waste water rejected by the textile industries is loaded with organic dyes, responsible for the high color present in the effluents. Some dyes and / or their degradation products could be carcinogenic and may have mutagenic properties. The rapid growth of the global economy has caused many environmental problems with a huge pollution problem. The abuse use of chemicals product is an environmental toxicological problem. The consequences can be serious for water resources. In this perspective, our study comes to participate with new means of depollution using new materials with interesting properties in the treatment of pollution. Among these materials, LDHs whose synthesis is easy and inexpensive can be a tool in the treatment of water Polluted [1]. Our contribution consists in using HDL as a means of sorption of dyes which are considered as polluting agents of waters especially for the industry textile. This study considers the removal of the Alizarine Red S (AR) from water on calcined MgAl,ZnAL and MgZnAL-layered double hydroxides. The different LDH was prepared by copreprecipation method. The materials was obtained for molar ratios R =2 for the different LDH. The carbonated layered Calcination of these solids leads to the formation of mixed oxides which have the property of being able to be regenerated by adsorbing new anionic entities. Adsorbents and adsorption products were characterized by physicochemical techniques. The structural characterization of the material was carried out by X-ray diffraction, infrared spectroscopy (FTIR). Dosages of the polluted solutions were monitored by UV-Visible spectrometry.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2017-12-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage (J-V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density (J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance (R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode (C μ ) and electron lifetime (t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2018-03-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage ( J- V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density ( J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance ( R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode ( C μ ) and electron lifetime ( t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

NASA Astrophysics Data System (ADS)

Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

2015-07-01

Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

Surface and cut-edge corrosion behavior of Zn-Mg-Al alloy-coated steel sheets as a function of the alloy coating microstructure

NASA Astrophysics Data System (ADS)

Oh, Min-Suk; Kim, Sang-Heon; Kim, Jong-Sang; Lee, Jae-Won; Shon, Je-Ha; Jin, Young-Sool

2016-01-01

The effects of Mg and Al content on the microstructure and corrosion resistance of hot-dip Zn-Mg-Al alloycoated steel sheets were investigated. Pure Zn and Zn-based alloy coatings containing Mg (0-5 wt%) and Al (0.2-55 wt%) were produced by a hot-dip galvanizing method. Mg and Al addition induced formation of intermetallic microstructures, like primary Zn, Zn/MgZn2 binary eutectic, dendric Zn/Al eutectoid, and Zn/Al/MgZn2/ternary eutectic structures in the coating layer. MgZn2-related structures (Zn/MgZn2, Zn/Al/MgZn2, MgZn2) played an important role in increasing the corrosion resistance of Zn-Mg-Al alloy-coated steel sheets. Zn-3%Mg-2.5%Al coating layer containing a large volume of lamellar-shaped Zn/MgZn2 binary eutectic structures showed the best cut-edge corrosion resistance. The analysis indicated that Mg dissolved from MgZn2 in the early stage of corrosion and migrated to the cathodic region of steel-exposed cut-edge area to form dense and ordered protective corrosion products, leading to prolonged cathodic protection of Zn-Mg-Al alloy-coated steel sheets.

Specifications of ZnO growth for heterostructure solar cell and PC1D based simulations

PubMed Central

Hussain, Babar; Ebong, Abasifreke

2015-01-01

This data article is related to our recently published article (Hussain et al., in press [1]) where we have proposed a new solar cell model based on n-ZnO as front layer and p-Si as rear region. The ZnO layer will act as an active n-layer as well as antireflection (AR) coating saving considerable processing cost. There are several reports presenting use of ZnO as window/antireflection coating in solar cells (Mansoor et al., 2015; Haq et al., 2014; Hussain et al., 2014; Matsui et al., 2014; Ding et al., 2014 [2], [3], [4], [5], [6]) but, here, we provide data specifically related to simultaneous use of ZnO as n-layer and AR coating. Apart from the information we already published, we provide additional data related to growth of ZnO (with and without Ga incorporation) layers using MOCVD. The data related to PC1D based simulation of internal and external quantum efficiencies with and without antireflection effects of ZnO as well as the effects of doping level in p-Si on current–voltage characteristics have been provided. PMID:26587557

Corrosion and wear properties of Zn-Ni and Zn-Ni-Al2O3 multilayer electrodeposited coatings

NASA Astrophysics Data System (ADS)

Shourgeshty, M.; Aliofkhazraei, M.; Karimzadeh, A.; Poursalehi, R.

2017-09-01

Zn-Ni and Zn-Ni-Al2O3 multilayer coatings with 32, 128, and 512 layers were electroplated on a low carbon steel substrate by pulse electrodeposition under alternative changes in the duty cycle between 20% and 90% and a constant frequency of 250 Hz. Corrosion behavior was investigated by potentiodynamic polarization test and electrochemical impedance spectroscopy (EIS) and wear behavior of the coatings was evaluated by a pin on disk test. The results showed that the corrosion resistance of coatings was improved by increasing the number of layers (the decrease in layer thickness) as well as the presence of alumina nanoparticles. The lowest corrosion current density corresponds to Zn-Ni-Al2O3 with 512 layers equal to 3.74 µA cm-2. Increasing the number of layers in the same total thickness and the presence of alumina nanoparticles within the coating also leads to the improvement in wear resistance of the samples. The coefficient of friction decreased with increasing number of layers and the lowest coefficient of friction (0.517) corresponds to Zn-Ni-Al2O3 coating with 512 layers. Wear mechanism of Zn-Ni coatings with a different number of layers is adhesive while in the Zn-Ni-Al2O3 coatings wear mechanism is a combination of adhesive and abrasive wear, where by increasing the number of the layers to 512 abrasive wear mechanism becomes dominant.

Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

NASA Astrophysics Data System (ADS)

Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy G.

2014-11-01

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm-3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm-3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography.

PubMed

Wu, Yizhi; Giddings, A Devin; Verheijen, Marcel A; Macco, Bart; Prosa, Ty J; Larson, David J; Roozeboom, Fred; Kessels, Wilhelmus M M

2018-02-27

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called "ALD supercycles" is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width-half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm -3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

PubMed Central

2018-01-01

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called “ALD supercycles” is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width–half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm–3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors. PMID:29515290

An Impact of Zirconium Doping of Zn-Al Braze on the Aluminum-Stainless Steel Joints Integrity During Aging

NASA Astrophysics Data System (ADS)

Yang, Jinlong; Xue, Songbai; Sekulic, Dusan P.

2017-01-01

This work offers an analysis of the microstructure and the growth rate of an intermetallic compound within the aged AA 6061 aluminum alloy-304 stainless steel joint brazed with Zn-15Al and Zn-15Al-0.2Zr filler metals. The effect of zirconium addition on mechanical integrity of the brazed joint was studied. The experimental results confirm that the thickness of the Fe-Al intermetallic layer formed at the brazed seam/stainless steel interface increases with the increase of the aging time. Furthermore, it is established that the growth rate of the intermetallic layer for the Zn-15Al-0.2Zr brazed joint was lower than that for Zn-15Al. The results also indicate that the shear strength of both Zn-15Al and Zn-15Al-0.2Zr brazed joints decreases monotonously during aging. The value of the strength after aging lasting for 800 h for Zn-15Al and Zn-15Al-0.2Zr has decreased by 20 and 17%, respectively. The fracture of joints occurred at the interface between the brazed seam and the Fe4Al13 intermetallic layer. The morphology of the surfaces exhibits a cleavage fracture.

Electronic absorption band broadening and surface roughening of phthalocyanine double layers by saturated solvent vapor treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jinhyun; Yim, Sanggyu, E-mail: sgyim@kookmin.ac.kr

2012-10-15

Variations in the electronic absorption (EA) and surface morphology of three types of phthalocyanine (Pc) thin film systems, i.e. copper phthalocyanine (CuPc) single layer, zinc phthalocyanine (ZnPc) single layer, and ZnPc on CuPc (CuPc/ZnPc) double layer film, treated with saturated acetone vapor were investigated. For the treated CuPc single layer film, the surface roughness slightly increased and bundles of nanorods were formed, while the EA varied little. In contrast, for the ZnPc single layer film, the relatively high solubility of ZnPc led to a considerable shift in the absorption bands as well as a large increase in the surface roughnessmore » and formation of long and wide nano-beams, indicating a part of the ZnPc molecules dissolved in acetone, which altered their molecular stacking. For the CuPc/ZnPc film, the saturated acetone vapor treatment resulted in morphological changes in mainly the upper ZnPc layer due to the significantly low solubility of the underlying CuPc layer. The treatment also broadened the EA band, which involved a combination of unchanged CuPc and changed ZnPc absorption.« less

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

NASA Astrophysics Data System (ADS)

Jiang, Fan; Chen, Jingwen; Bi, Han; Li, Luying; Jing, Wenkui; Zhang, Jun; Dai, Jiangnan; Che, Renchao; Chen, Changqing; Gao, Yihua

2018-01-01

Non-polar a-plane n-ZnO/p-AlGaN and n-ZnO/i-ZnO/p-AlGaN heterojunction film light-emitting diodes (LEDs) are fabricated with good crystalline quality. The optical measurements show obvious performance enhancement with i-ZnO layer insertion. Off-axis electron holography reveals a potential drop of ˜1.5 V across the heterojunctions with typical p-n junction characteristics. It is found that the electrostatic potentials are inclined and the corresponding electrostatic fields are opposite to each other in n-ZnO and p-AlGaN regions. The electrostatic fields are mainly attributed to strain induced piezoelectric polarizations. After an insertion of an i-ZnO layer into the p-n heterojunction, comparatively flat electrostatic potential generates in the intrinsic ZnO region and contributes to faster movements of the injected electrons and holes, making the i-ZnO layer more conductive to the radiative recombination with enhanced exciton recombination possibilities and at last the LED performance enhancement.

Evaluation of layered zinc hydroxide nitrate and zinc/nickel double hydroxide salts in the removal of chromate ions from solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bortolaz de Oliveira, Henrique; Wypych, Fernando, E-mail: wypych@ufpr.br

Layered zinc hydroxide nitrate (ZnHN) and Zn/Ni layered double hydroxide salts were synthesized and used to remove chromate ions from solutions at pH 8.0. The materials were characterized by many instrumental techniques before and after chromate ion removal. ZnHN decomposed after contact with the chromate solution, whereas the layered structure of Zn/Ni hydroxide nitrate (Zn/NiHN) and Zn/Ni hydroxide acetate (Zn/NiHA) remained their layers intact after the topotactic anionic exchange reaction, only changing the basal distances. ZnHN, Zn/NiHN, and Zn/NiHA removed 210.1, 144.8, and 170.1 mg of CrO{sub 4}{sup 2−}/g of material, respectively. Although the removal values obtained for Zn/NiHN andmore » Zn/NiHA were smaller than the values predicted for the ideal formulas of the solids (194.3 and 192.4 mg of CrO{sub 4}{sup 2−}/g of material, respectively), the measured capacities were higher than the values achieved with many materials reported in the literature. Kinetic experiments showed the removal reaction was fast. To facilitate the solid/liquid separation process after chromium removal, Zn/Ni layered double hydroxide salts with magnetic supports were also synthesized, and their ability to remove chromate was evaluated. - Highlights: • Zinc hydroxide nitrate and Zn/Ni hydroxide nitrate or acetate were synthesized. • The interlayer anions were replaced by chromate anions at pH=8.0. • Only Zn/Ni hydroxide nitrate or acetate have the structure preserved after exchange. • Fast exchange reaction and high capacity of chromate removal were observed. • Magnetic materials were obtained to facilitate the solids removal the from solutions.« less

Comparative study of the synthesis of layered transition metal molybdates

NASA Astrophysics Data System (ADS)

Mitchell, S.; Gómez-Avilés, A.; Gardner, C.; Jones, W.

2010-01-01

Mixed metal oxides (MMOs) prepared by the mild thermal decomposition of layered double hydroxides (LDHs) differ in their reactivity on exposure to aqueous molybdate containing solutions. In this study, we investigate the reactivity of some T-Al containing MMOs ( T=Co, Ni, Cu or Zn) towards the formation of layered transition metal molybdates (LTMs) possessing the general formula AT2(OH)(MoO 4) 2·H 2O, where A=NH 4+, Na + or K +. The phase selectivity of the reaction was studied with respect to the source of molybdate, the ratio of T to Mo and the reaction pH. LTMs were obtained on reaction of Cu-Al and Zn-Al containing MMOs with aqueous solutions of ammonium heptamolybdate. Rehydration of these oxides in the presence of sodium or potassium molybdate yielded a rehydrated LDH phase as the only crystalline product. The LTM products obtained by the rehydration of MMO precursors were compared with LTMs prepared by direct precipitation from the metal salts in order to study the influence of preparative route on their chemical and physical properties. Differences were noted in the composition, morphology and thermal properties of the resulting products.

Ultrasonic-assisted soldering of fine-grained 7034 aluminum alloy using Sn-Zn solders below 300°C.

PubMed

Guo, Weibing; Luan, Tianmin; He, Jingshan; Yan, Jiuchun

2018-01-01

The fine-grained Al alloys prefer to be soldered at as low as temperature to keep their mechanical properties. Solders of Sn-4Zn, Sn-9Zn, and Sn-20Zn alloys were used to solder fine-grained 7034 Al alloy pieces by ultrasonic-assisted soldering below 300°C in air. The joint using Sn-4Zn solder had the highest tensile strength of 201MPa and the fractures occurred in both β-Sn and Sn-Zn eutectic phases. Such joint was much stronger than the 1060 Al joint using Sn-4Zn solder, and its strength had approached the strength of 7034 Al joint using Zn-5Al solder. The strength of the joints using Sn-9Zn and Sn-20Zn solders dropped to∼160MPa due to the appearance of weak interfaces between η-Zn and eutectic phases in the bond layers. All the joints using Sn-Zn solders had very strong interfacial bonding, and alumina interlayers were identified at all the interfaces. Al dissolved in the bond layer reacted with the O rapidly to form alumina interlayers at the interfaces under the ultrasonic action. Zn segregated at the interface and formed strong bonds with both the Al terminated surface of alumina and the bond layer, resulting in strong interfacial bonding between Sn-Zn solders and Al alloys. Copyright © 2017 Elsevier B.V. All rights reserved.

Interfacial Phenomena in Al/Al, Al/Cu, and Cu/Cu Joints Soldered Using an Al-Zn Alloy with Ag or Cu Additions

NASA Astrophysics Data System (ADS)

Pstruś, Janusz; Gancarz, Tomasz

2014-05-01

The studies of soldered joints were carried out in systems: Al/solder/Al, Al/solder/Cu, Cu/solder/Cu, where the solder was (Al-Zn)EUT, (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Ag and (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Cu addition. Brazing was performed at 500 °C for 3 min. The EDS analysis indicated that the composition of the layers starting from the Cu pad was CuZn, Cu5Zn8, and CuZn4, respectively. Wetting tests were performed at 500 °C for 3, 8, 15, and 30 min, respectively. Thickness of the layers and their kinetics of growth were measured based on the SEM micrographs. The formation of interlayers was not observed from the side of Al pads. On the contrary, dissolution of the Al substrate and migration of Al-rich particles into the bulk of the solder were observed.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

NASA Astrophysics Data System (ADS)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

Enhancement of the photoprotection and nanomechanical properties of polycarbonate by deposition of thin ceramic coatings

NASA Astrophysics Data System (ADS)

Mailhot, B.; Rivaton, A.; Gardette, J.-L.; Moustaghfir, A.; Tomasella, E.; Jacquet, M.; Ma, X.-G.; Komvopoulos, K.

2006-05-01

The chemical reactions resulting from ultraviolet radiation produce discoloration and significant changes in the surface properties of polycarbonate (PC). To prevent photon absorption from irradiation and oxygen diffusion and to enhance the surface nanomechanical properties of PC, thin ceramic coatings of ZnO and Al2O3 (both single- and multi-layer) were deposited on bulk PC by radio-frequency magnetron sputtering. The samples were irradiated at wavelengths greater than 300 nm, representative of outdoor conditions. Despite the effectiveness of ZnO to protect PC from irradiation damage, photocatalytic oxidation at the PC/ZnO interface was the limiting factor. To overcome this deficiency, a thin Al2O3 coating was used both as intermediate and top layer because of its higher hardness and wear resistance than ZnO. Therefore, PC/Al2O3/ZnO, PC/ZnO/Al2O3, and PC/Al2O3/ZnO/Al2O3 layered media were fabricated and their photodegradation properties were examined by infrared and ultraviolet-visible spectroscopy. It was found that the photocatalytic activity at the PC/ZnO interface was reduced in the presence of the intermediate Al2O3 layer that limited the oxygen permeability. Nanomechanical experiments performed with a surface force apparatus revealed that the previous coating systems enhanced both the surface nanohardness and the elastic modulus and reduced the coefficient of friction in the order of ZnO, Al2O3, and Al2O3/ZnO/Al2O3. Although irradiation increased the nanohardness and the elastic modulus of PC, the irradiation effect on the surface mechanical properties of ceramic-coated PC was secondary.

High-quality ZnO inverse opals and related heterostructures as photocatalysts produced by atomic layer deposition

NASA Astrophysics Data System (ADS)

Long, Jie; Fu, Ming; Li, Caixia; Sun, Cuifeng; He, Dawei; Wang, Yongsheng

2018-10-01

ZnO with various nanostructures is widely investigated for high photoelectrochemical (PEC) catalysis performances due to its abundant and inert semiconducting properties with elevated electronic mobility and variable morphologies. Because the solar energy conversion efficiencies could possibly be further enhanced by the introduction of nanophotonic structures with larger surface ratios, high-quality ZnO inverse opals (IOs) were achieved by ALD method using O3 as the oxidant. The intrinsic UV emission peaks and PEC currents of ZnO IOs produced by O3 atomic layer deposition (ALD) method were much improved when compared to those made by H2O ALD and electrodeposition. ALD at higher temperatures (240 °C) can further enhance the crystalline quality and PEC performances. The optimal ALD thickness and filling fraction obtained by controlling ALD cycles, as well as the optimal photonic stop band position obtained by colloidal crystals with different sphere diameters were also discussed. It was found that conformally coated samples with TiO2 protection layers by ALD method using titanium tetrachloride as a precursor enhanced the photochemical stability of ZnO IOs. The photocorrosion was further reduced by inserting ALD Al2O3 inside the TiO2 protection layers. Heterostructured photonic crystals with double-layer IO structures with different pore periodicities were also developed for enhancing the PEC performances.

Interfacial Characterization of Dissimilar Joints Between Al/Mg/Al-Trilayered Clad Sheet to High-Strength Low-Alloy Steel

NASA Astrophysics Data System (ADS)

Macwan, A.; Jiang, X. Q.; Chen, D. L.

2015-07-01

Magnesium (Mg) alloys are increasingly used in the automotive and aerospace sectors to reduce vehicle weight. Al/Mg/Al tri-layered clad sheets are deemed as a promising alternative to improve the corrosion resistance and formability of Mg alloys. The structural application of Al/Mg/Al tri-layered clad sheets inevitably involves welding and joining in the multi-material vehicle body manufacturing. This study aimed to characterize the bonding interface microstructure of the Al/Mg/Al-clad sheet to high-strength low-alloy steel with and without Zn coating using ultrasonic spot welding at different levels of welding energy. It was observed that the presence of Zn coating improved the bonding at the interface due to the formation of Al-Zn eutectic structure via enhanced diffusion. At a higher level of welding energy, characteristic flow patterns of Zn into Al-clad layer were observed with an extensive penetration mainly along some high angle grain boundaries. The dissimilar joints without Zn coating made at a high welding energy of 800 J failed partially from the Al/Fe weld interface and partially from the Al/Mg clad interface, while the joints with Zn coating failed from the Al/Mg clad interface due to the presence of brittle Al12Mg17 phase.

Optical Studies of Semiconductor Heterostructures: Measurements of Tunneling Times, and Studies of Strained Superlattices.

NASA Astrophysics Data System (ADS)

Jackson, Michael Kevin

1991-05-01

This thesis describes experimental optical studies of semiconductor heterostructures. The topic is introduced in Chapter 1. In Chapter 2 we describe measurements of tunneling escape times for carriers photoexcited in the quantum well of an undoped GaAs/AlAs/GaAs/AlAs/GaAs double -barrier heterostructure. The first experimental measurements of the tunneling escape times for both electrons and heavy holes were made using the two-beam technique of photoluminescence excitation correlation spectroscopy (PECS). Heavy holes were observed to escape much more rapidly than expected from a simple one-band calculation of the heavy-hold tunneling escape time. This can be explained by considering a four -band model for holes. Calculations indicate that mixing of the quantum well heavy- and light-hole levels, due to dispersion in the plane of the quantum well, can lead to significantly faster heavy hole escape at the experimental carrier densities and temperatures. Chapter 3 describes a study of the effect of indirect (X-point) levels in the AlAs barriers on the tunneling escape of electrons in undoped double-barrier heterostructures. The X-point levels affect the escape of photoexcited electrons in devices where the energy of the electron state confined in the GaAs quantum well is nearly equal to, or higher than, that of the X-point levels in the AlAs barriers. In Chapter 4, we present time-resolved photoluminescence and photocurrent studies of electrically biased double -barrier heterostructures. Studies of the photoluminescence indicate that transport of photoexcited carriers from the electrodes into the quantum well occurs. The PECS technique has been extended to a study of photocurrents in these devices; results indicate that this technique may be useful for the study of devices that cannot be studied with photoluminescence. Chapter 5 describes a study of the accomodation of lattice mismatch in CdTe/ZnTe strained layer superlattices. Using resonance Raman scattering, the energies of the ZnTe-like phonons were determined in a series of superlattices. The ZnTe-like phonon energies decrease with increasing average CdTe content, indicative of the increasing strain of the ZnTe layers, and in agreement with calculations assuming a free-standing superlattice.

ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

2012-07-01

We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.

Preparation and characterization of double layer thin films ZnO/ZnO:Ag for methylene blue photodegradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wibowo, Singgih, E-mail: singgih@st.fisika.undip.ac.id; Sutanto, Heri, E-mail: herisutanto@undip.ac.id

2016-02-08

Double layer (DL) thin films of zinc oxide and silver-doped zinc oxide (ZnO/ZnO:Ag) were deposited on glass substrate by sol-gel spray coating technique. The prepared thin films were subjected for optical and photocatalytic studies. UV-visible transmission spectra shows that the subtitution of Ag in ZnO leads to band gap reduction. The influence of Ag doping on the photocatalytic activity of ZnO for the degradation of methylene blue dye was studied under solar radiation. The light absorption over an extended visible region by Ag ion doping in ZnO film contributed equally to improve the photocatalytic activity up to 98.29%.

A bionanohybrid ZnAl-NADS ecological pesticide as a treatment for soft rot disease in potato (Solanum tuberosum L.).

PubMed

Morales-Irigoyen, Erika Elizabeth; de Las Mercedes Gómez-Y-Gómez, Yolanda; Flores-Moreno, Jorge Luis; Franco-Hernández, Marina Olivia

2017-09-18

Pectobacterium carotovorum (Pc) is a phytopathogenic strain that causes soft rot disease in potato (Solanum tuberosum L.), resulting in postharvest losses. Chemical control is effective for managing this disease, but overdoses cause adverse effects. Because farmers insist on using chemical agents for crop protection, it is necessary to develop more effective pesticides in which the active compound released can be regulated. In this context, we proposed the synthesis of ZnAl-NADS, in which nalidixic acid sodium salt (NADS) is linked to a ZnAl-NO 3 layered double hydroxide (LDH) host as a nanocarrier. XRD, FT-IR, and SEM analyses confirmed the successful intercalation of NADS into the interplanar LDH space. The drug release profile indicated that the maximum release was completed in 70 or 170 min for free NADS (alone) or for NADS released from ZnAl-NADS, respectively. This slow release was attributed to strong electrostatic interactions between the drug and the anion exchanger. A modulated release is preferable to the action of the bulk NADS, showing increased effectiveness and minimizing the amount of the chemical available to pollute the soil and the water. The fitting data from modified Freundlich and parabolic diffusion models explain the release behavior of the NADS, suggesting that the drug released from ZnAl-NADS bionanohybrid was carried out from the interlamellar sites, according to the ion exchange diffusion process also involving intraparticle diffusion (coeffect). ZnAl-NADS was tested in vitro against Escherichia coli (Ec) and Pc and exhibited bacteriostatic and biocidal effects at 0.025 and 0.075 mg mL -1 , respectively. ZnAl-NADS was also tested in vivo as an ecological pesticide for combating potato soft rot and was found to delay typical disease symptoms. In conclusion, ZnAl-NADS can potentially be used to control pests, infestation, and plant disease.

Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

PubMed

Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

2014-02-15

Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

ANTS-anchored Zn-Al-CO{sub 3}-LDH particles as fluorescent probe for sensing of folic acid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pengfei; Liu, Dan; Liu, Yanhuan

2016-09-15

A novel fluorescent nanosensor for detecting folic acid (FA) in aqueous media has been developed based on 8-aminonaphthalene-1,3,6-trisulfonate (ANTS) anchored to the surface of Zn-Al-CO{sub 3}-layered double hydroxides (LDH) particles. The nanosensor showed high fluorescence intensity and good photostability due to a strong coordination interaction between surface Zn{sup 2+} ions of Zn-Al-CO{sub 3}-LDH and N atoms of ANTS, which were verified by result of X-ray photoelectron spectroscopy (XPS). ANTS-anchored on the surface of Zn-Al-CO{sub 3}-LDH restricted the intra-molecular rotation leading to ANTS-anchored J-type aggregation emission enhancement. ANTS-anchored Zn-Al-CO{sub 3}-LDH particles exhibited highly sensitive and selective response to FA over othermore » common metal ions and saccharides present in biological fluids. The proposed mechanism was that oxygen atoms of -SO{sub 3} groups in ANTS-anchored on the surface of Zn-Al-CO{sub 3}-LDH were easily collided by FA molecules to form potential hydrogen bonds between ANTS-anchored and FA molecules, which could effectively quench the ANTS-anchored fluorescence. Under the simulated physiological conditions (pH of 7.4), the fluorescence quenching was fitted to Stern-Volmer equation with a linear response in the concentration range of 1 μM to 200 μM with a limit of detection of 0.1 μM. The results indicate that ANTS-anchored Zn-Al-CO{sub 3}-LDH particles can afford a very sensitive system for the sensing FA in aqueous solution. - Highlights: • A novel fluorescent nanosensor has been developed. • The sensor exhibited highly sensitive and selective response to FA. • The fluorescence quenching was fitted to Stern–Volmer equation. • The linear response range was 1–200 μM with a limit of detection of 0.1 μM.« less

First-principles study on ferromagnetism in double perovskite Sr2AlTaO6 doped with Cu or Zn at B sites

NASA Astrophysics Data System (ADS)

Li, Y. D.; Wang, C. C.; Guo, Y. M.; Yu, Y.; Lu, Q. L.; Huang, S. G.; Li, Q. J.; Wang, H.; Cheng, R. L.; Liu, C. S.

2018-05-01

The possibilities of ferromagnetism induced by nonmagnetic dopants (Cu, Zn) in double perovskite Sr2AlTaO6 at B sites are investigated by density functional theory. Calculations reveal that substitutions at Ta-site tend to form high spin electronic configurations and could induce ferromagnetism which can be attributed to the hole-mediated p- d hybridization between Cu (or Zn) eg states and the neighboring O 2p states. The dopants preferably substitute at Al-site and adopt low spin electronic structures. Due to the smaller hole concentration and weaker covalent intensity, Sr2AlTaO6 with dopants at Al-site exhibits p-type metallic semiconductors without spin polarization.

Antifouling composites with self-adaptive controlled release based on an active compound intercalated into layered double hydroxides

NASA Astrophysics Data System (ADS)

Yang, Miaosen; Gu, Lianghua; Yang, Bin; Wang, Li; Sun, Zhiyong; Zheng, Jiyong; Zhang, Jinwei; Hou, Jian; Lin, Cunguo

2017-12-01

This paper reports a novel method to prepare the antifouling composites with properties of self-adaptive controlled release (defined as control the release rate autonomously and adaptively according to the change of environmental conditions) by intercalation of sodium paeonolsilate (PAS) into MgAl and ZnAl layered double hydroxide (LDH) with the molar ratio (M2+/M3+) of 2:1 and 3:1, respectively. The powder X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) confirm the intercalation of PAS into the galleries of LDH. The controlled release behavior triggered by temperature for the PAS-LDH composites has been investigated, and the results show that the release rate of all PAS-LDH composites increases as the increase of temperature. However, the MgAl-PAS-LDH composites (Mg2Al-PAS-LDH and Mg3Al-PAS-LDH) exhibit the increased release rate of 0.21 ppm/°C from 15 to 30 °C in 3.5% NaCl solution, more than three times of the ZnAl-PAS-LDH composites (0.06 ppm/°C), owing to the confined microenvironment influenced by metal types in LDH layers. In addition, a possible diffusion-controlled process with surface diffusion, bulk diffusion and heterogeneous flat surface diffusion has been revealed via fitting four kinetic equations. Moreover, to verify the practical application of the PAS-LDH composites, a model coating denoted as Mg2Al-PAS-LDH coating was fabricated. The release result displays that the release rate increases or decreases as temperature altered at 15 and 25 °C alternately, indicating its self-adaptive controlled release behavior with temperature. Moreover, the superior resistance to the settlement of Ulva spores at 15 and 25 °C was observed for the Mg2Al-PAS-LDH coating, as a result of the controllable release of antifoulant. Therefore, this work provides a facile and effective method for the fabrication of antifouling composites with self-adaptive controlled release behavior in response to temperature, which can be used to prolong the lifetime of antifouling coatings.

Ab initio simulation of changes in geometry, electronic structure, and Gibbs free energy caused by dehydration of hydrotalcites containing Cl⁻ and CO₃²⁻ counteranions.

PubMed

Costa, Deyse G; Rocha, Alexandre B; Souza, Wladmir F; Chiaro, Sandra Shirley X; Leitão, Alexandre A

2011-04-07

This ab initio study was performed to better understand the correlation between intercalated water molecules and layered double hydroxides (LDH), as well as the changes that occur by the dehydration process of Zn-Al hydrotalcite-like compounds containing Cl⁻ and CO₃²⁻ counterions. We have verified that the strong interaction among intercalated water molecules, cointercalated anions, and OH groups from hydroxyl layers is reflected in the thermal stability of these compounds. The Zn(2/3)Al(1/3)(OH)₂Cl(1/3)·2/3H₂O hydrotalcite loses all the intercalated water molecules around 125 °C, while the Zn(2/3)Al(1/3)(OH)₂(CO₃)(1/6)·4/6H₂O compound dehydrates at about 175 °C. These values are in good agreement with experimental data. The interlayer interactions were discussed on the basis of electron density difference analyses. Our calculation shows that the electron density in the interlayer region decreases during the dehydration process, inducing the migration of the Cl⁻ anion and the displacement of the hydroxyl layer from adjacent layers. Changes in these compound structures occur to recover part of the hydrogen bonds broken due to the removal of water molecules. It was observed that the chloride ion had initially a lower Löwdin charge (Cl(-0.43)), which has increased its absolute value (Cl(-0.58)) after the water molecules removal, while the charges on carbonate ions remain invariant, leading to the conclusion that the Cl⁻ anion can be more influenced by the amount of water molecules in the interlayer space than the CO₃²⁻ anion in hydrotalcite-like compounds.

Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

NASA Astrophysics Data System (ADS)

Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

2017-12-01

In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

Microstructural evolution of SiC joints soldered using Zn-Al filler metals with the assistance of ultrasound.

PubMed

Wu, Bingzhi; Leng, Xuesong; Xiu, Ziyang; Yan, Jiuchun

2018-06-01

SiC ceramics were successfully soldered with the assistance of ultrasound. Two kinds of filler metals, namely non-eutectic Zn-5Al-3Cu and eutectic Zn-5Al alloys, were used. The effects of ultrasonic action on the microstructure and mechanical properties of the soldered joints were investigated. The results showed that ultrasound could promote the wetting and bonding between the SiC ceramic and filler metals within tens of seconds. For the Zn-5Al-3Cu solder, a fully grain-refined structure in the bond layer was obtained as the ultrasonic action time increased. This may lead to a substantial enhancement in the strength of the soldered joints. For the Zn-5Al solder, the shear strength of the soldered joints was only ∼102 MPa when the ultrasonic action time was shorter, and fractures occurred in the brittle lamellar eutectic phases in the center of the bond layer. With increasing ultrasonic action time, the lamellar eutectic phase in the bond layer of SiC joints could be completely transformed to a fine non-lamellar eutectic structure. Meanwhile, the grains in the bond layer were obviously refined. Those results led to the remarkable enhancement of the shear strength of the joints (∼138 MPa) using the Zn-5Al solder, which had approached that enhancement using the Zn-5Al-3Cu solder. The enhanced mechanical properties of the joints were attributed to the significant refinement of the grains and the change in the eutectic structure in the bond layer. Prolonged enhanced heterogeneous nucleation triggered by ultrasonic cavitation is the predominant refinement mechanism of the bond metals of the SiC joints. Copyright © 2018 Elsevier B.V. All rights reserved.

Influence of Gas Atmosphere Dew Point on the Selective Oxidation and the Reactive Wetting During Hot Dip Galvanizing of CMnSi TRIP Steel

NASA Astrophysics Data System (ADS)

Cho, Lawrence; Lee, Seok Jae; Kim, Myung Soo; Kim, Young Ha; De Cooman, Bruno C.

2013-01-01

The selective oxidation and reactive wetting of intercritically annealed Si-bearing CMnSi transformation-induced plasticity steels were investigated by high-resolution transmission electron microscopy. In a N2 + 10 pct H2 gas atmosphere with a dew point (DP) ranging from 213 K to 278 K (-60 °C to 5 °C), a continuous layer of selective oxides was formed on the surface. Annealing in a higher DP gas atmosphere resulted in a thinner layer of external oxidation and a greater depth of internal oxidation. The hot dipping was carried out in a Zn bath containing 0.22 mass pct Al, and the bath temperature was 733 K (460 °C). Coarse and discontinuous Fe2Al5- x Zn x grains and Fe-Zn intermetallics (ζ and δ) were observed at the steel/coating interface after the hot dip galvanizing (HDG) of panels were annealed in a low DP atmosphere 213 K (-60 °C). The Fe-Zn intermetallics were formed both in areas where the Fe2Al5- x Zn x inhibition layer had not been formed and on top of non-stoichiometric Fe-Al-Zn crystals. Poor wetting was observed on panels annealed in a low DP atmosphere because of the formation of thick film-type oxides on the surface. After annealing in higher DP gas atmospheres, i.e., 263 K and 278 K (-10 °C and 5 °C), a continuous and fine-grained Fe2Al5- x Zn x layer was formed. No Fe-Zn intermetallics were formed. The small grain size of the inhibition layer was attributed to the nucleation of the Fe2Al5- x Zn x grains on small ferrite sub-surface grains and the presence of granular surface oxides. A high DP atmosphere can therefore significantly contribute to the decrease of Zn-coating defects on CMnSi TRIP steels processed in HDG lines.

Intercalation studies of zinc hydroxide chloride: Ammonia and amino acids

NASA Astrophysics Data System (ADS)

Arízaga, Gregorio Guadalupe Carbajal

2012-01-01

Zinc hydroxide chloride (ZHC) is a layered hydroxide salt with formula Zn5(OH)8Cl2·2H2O. It was tested as intercalation matrix for the first time and results were compared with intercalation products of the well-known zinc hydroxide nitrate and a Zn/Al layered double hydroxide. Ammonia was intercalated into ZHC, while no significant intercalation occurred in ZHN. Aspartic acid intercalation was only achieved by co-precipitation at pH=10 with ZHC and pH=8 with zinc hydroxide nitrate. Higher pH resistance in ZHC favored total deprotonation of both carboxylic groups of the Asp molecule. ZHC conferred more thermal protection against Asp combustion presenting exothermic peaks even at 452 °C while the exothermic event in ZHN was 366 °C and in the LDH at 276 °C.

Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

NASA Astrophysics Data System (ADS)

Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

2015-05-01

We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

Effect of Mg on the Microstructure and Corrosion Resistance of the Continuously Hot-Dip Galvanizing Zn-Mg Coating

PubMed Central

Dong, Anping; Li, Baoping; Lu, Yanling; Zhu, Guoliang; Xing, Hui; Shu, Da; Sun, Baode; Wang, Jun

2017-01-01

The microstructure of continuously hot-dip galvanizing Zn-Mg coating was investigated in order to obtain the mechanism of the effects of Mg on the corrosion resistance. In this paper, the vertical section of the Zn-0.20 wt % Al-Mg ternary phase diagram near the Al-low corner was calculated. The results indicates that the phase composition of the Zn-0.20 wt % Al-Mg ternary phase diagram near the Al-low corner is the same as Zn-Mg binary phase diagram, suggesting Al in the Zn-Mg (ZM) coatings mainly concentrates on the interfacial layer between the coating and steel substrate. The microstructure of continuously hot-dip galvanizing ZM coatings with 0.20 wt % Al containing 1.0–3.0 wt % Mg was investigated using tunneling electron microscopy (TEM). The morphology of Zn in the coating changes from bulk to strip and finally to mesh-like, and the MgZn2 changes from rod-like to mesh-like with the Mg content increasing. Al in the ZM coatings mainly segregates at the Fe2Al5 inhibition layer and the Mg added to the Zn bath makes this inhibition layer thinner and uneven. Compared to GI coating, the time of the first red rust appears increases by more than two-fold and expansion rate of red rust reduces by more than four-fold in terms of salt spray experiment. The ZM coating containing 2.0 wt % Mg has the best corrosion resistance. The enhanced corrosion resistance of ZM coatings mainly depends on different corrosion products. PMID:28829393

Intercalation of amino acids and oligopeptides into Zn Al layered double hydroxide by coprecipitation reaction

NASA Astrophysics Data System (ADS)

Aisawa, Sumio; Sasaki, Shuji; Takahashi, Satoshi; Hirahara, Hidetoshi; Nakayama, Hirokazu; Narita, Eiichi

2006-05-01

The coprecipitation of amino acids and oligopeptides with the Zn Al LDH was investigated using phenylalanine (Phe), phenylalanyl-phenylalanine (Phe-Phe), glycyl-phenylalanine (Gly Phe), glycine (Gly), glycyl-glycine (Gly Gly), glycyl-glycyl-glycine (Gly Gly Gly) and N-(N-γ-glutamyl-cysteinyl)-glycine (GSH) as guest species. The coprecipitation behavior of amino acids and oligopeptides was found to be influenced by the solution pH and the kind of their side chain groups, and reached the maximum at pH 8 or 9. The basal spacing, d003, of the Phe, Phe-Phe and GSH/LDH was 1.81, 2.41 and 1.64 nm, supporting that guests were arranged vertical to the LDH basal layer. Acceding to the basal spacing of the Gly, Gly Gly and Gly Gly Gly/LDH (d003=0.84 0.88 nm), these guests were oriented horizontal to the LDH basal layer with the co-intercalated NO3-. Moreover, the amount of Phe-Phe, Gly Gly and Gly Gly Gly intercalated was almost the same as that of Phe and Gly despite increasing the number peptide bond and the molecular size. GSH was intercalated into the LDH interlayer space as GSH oxidized form with bridged LDH layers by their carboxylate groups.

Zn- and Co-based layered double hydroxides: prediction of the a parameter from the fraction of trivalent cations and vice versa

PubMed Central

Richardson, Ian G.

2013-01-01

A recently proposed method to calculate the a parameter of the unit cell of layered double hydroxides from the fraction of trivalent cations is extended to Zn- and Co-based phases. It is shown to be useful as a sanity test for extant and future structure determinations and computer-simulation studies. PMID:23873067

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

PubMed

Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

2016-04-01

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

On the properties of organic heterostructures prepared with nano-patterned metallic electrode

NASA Astrophysics Data System (ADS)

Breazu, C.; Socol, M.; Preda, N.; Matei, E.; Rasoga, O.; Girtan, M.; Mallet, R.; Stanculescu, F.; Stanculescu, A.

2018-06-01

This paper presents a comparative study between the properties of the heterostructures realized with single/multi layer organic (zinc phthalocyanine or/and fullerene) prepared on Si substrate between flat or patterned aluminum (Al) layer metallic electrode and multi layer ZnO/Au/ZnO transparent conductor electrode (TCE). The UV-Nanoimprint Lithography was used for the realization of a 2D array of nanostructures (holes/pillars) characterized by a periodicity of 1.1 μm and cylindrical shape: diameter = 400 nm and depth/height = 300 nm. The effect of the electrode patterning on the properties of the organic heterostructures was analyzed. For the samples with patterned Al electrode was remarked a slight red shift of the peaks in the reflection spectra determined by an increased interaction between the organic molecules in the delimited region of the patterned holes. The shape of the emission spectra at excitation with UV light showed a narrow intense peak around 500 nm associated with the intense resonance phenomena between the energy of the incident light and the surface plasmons in the patterned Al layer. The TCE followed the morphology of the organic film on which it was deposited. The significant differences between the morphology of the top layer in the heterostructures realized on flat and patterned Al are correlated with the total thickness of the successively deposited layers and with the particularities of the molecular arrangement, leading to the preservation or deleting of patterning. An injection contact behavior was evidence for most heterostructures built on flat and patterned Al. The slight increase in current at an applied bias <1 V in the heterostructure Si/Al/ZnPc/TCE is attributed to the larger interfacial area between the patterned Al electrode and ZnPc layer compared to the interface area between flat Al and ZnPc. A buffer layer of 1,4,5,8-naphthalen-tetracarboxylic dianhydride (NTCDA), sandwiched between the flat metallic electrode and organic film in the heterostructure Si/Al/C60/ZnPc/TCE has determined an increase in the current at low applied voltages.

Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

NASA Astrophysics Data System (ADS)

Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

2018-06-01

In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.

PubMed

Yan, Baojun; Liu, Shulin; Heng, Yuekun; Yang, Yuzhen; Yu, Yang; Wen, Kaile

2017-12-01

Pure aluminum oxide (Al 2 O 3 ) and zinc aluminum oxide (Zn x Al 1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al 1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE V ) and conduction band offset (ΔE C ) for the interface of the Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction have been constructed. An accurate value of ΔE V  = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al 2 O 3 thickness. Given the experimental E g of 6.8 eV for Al 2 O 3 and 5.29 eV for Zn 0.8 Al 0.2 O, a type-I heterojunction with a ΔE C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

Structure and Corrosion Behavior of Arc-Sprayed Zn-Al Coatings on Ductile Iron Substrate

NASA Astrophysics Data System (ADS)

Bonabi, Salar Fatoureh; Ashrafizadeh, Fakhreddin; Sanati, Alireza; Nahvi, Saied Mehran

2018-02-01

In this research, four coatings including pure zinc, pure aluminum, a double-layered coating of zinc and aluminum, and a coating produced by simultaneous deposition of zinc and aluminum were deposited on a cast iron substrate using electric arc-spraying technique. The coatings were characterized by XRD, SEM and EDS map and spot analyses. Adhesion strength of the coatings was evaluated by three-point bending tests, where double-layered coating indicated the lowest bending angle among the specimens, with detection of cracks at the coating-substrate interface. Coatings produced by simultaneous deposition of zinc and aluminum possessed a relatively uniform distribution of both metals. In order to evaluate the corrosion behavior of the coatings, cyclic polarization and salt spray tests were conducted. Accordingly, pure aluminum coating showed susceptibility to pitting corrosion and other coatings underwent uniform corrosion. For double-layered coating, SEM micrographs revealed zinc corrosion products as flaky particles in the pores formed by pitting on the surface, an indication of penetration of corrosion products from the lower layer (zinc) to the top layer (aluminum). All coatings experienced higher negative corrosion potentials than the iron substrate, indicative of their sacrificial behavior.

Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

PubMed

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

Structural and optical characterization of highly anisotropic low loss Al:ZnO/ZnO multilayered metamaterial with hyperbolic dispersion grown by pulsed layer deposition

NASA Astrophysics Data System (ADS)

Kelly, Priscilla; Zhang, Wenrui; Liu, Mingzhao; Kuznetsova, Lyuba

2017-08-01

Transparent conductive oxide materials have shown unique optical properties, such as negative refraction, hyperbolic dispersion, and epsilon-near-zero dispersion. In particular, aluminum-doped zinc oxide (Al:ZnO) has shown the most promising results over traditionally used noble metals. Pulsed layer deposition is a popular technique due to its fast and controlled growth rate, as well as the stoichiometric target-to-substrate material transfer. But, since it uses large and inhomogeneous kinetic energy, samples could be prone to macro- and microscopic defects. In this work, we investigate multilayered samples of Al:ZnO/ZnO grown by pulsed laser deposition with the goal of developing a low-loss metamaterial with hyperbolic dispersion. Different fabrication conditions, such as Al:ZnO/ZnO ratio, the thickness of an individual layer, different substrates, and deposition temperatures, were investigated. Results of the ellipsometry analysis, based on fitting spectroscopy data using the Berreman formalism, show that the hyperbolic dispersion transition (Re ɛ∥>0, Re ɛ⊥< 0) is achieved at λc=1868 nm wavelength (Im (ɛ⊥) 0.03) for samples with 1:4 Al:ZnO/ZnO deposition ratio. The fitted dielectric functions for samples with various parameters show that a lower deposition temperature leads to a shorter transition wavelength.

Preparation of Tween 80-Zn/Al-Levodopa-Layered Double Hydroxides Nanocomposite for Drug Delivery System

PubMed Central

Kura, Aminu Umar; Hussein-Al-Ali, Samer Hasan; Hussein, Mohd Zobir; Fakurazi, Sharida

2014-01-01

We incorporated anti-Parkinsonian drug, levodopa (dopa), in Zn/Al-LDH by coprecipitation method to form dopa-LDH nanocomposite. Further coating of Tween-80 on the external surfaces of dopa-LDH nanocomposite was achieved through the oxygen of C=O group of Tween-80 with the layer of dopa-LDH nanocomposite. The final product is called Tween-dopa-LDH nanocomposite. The X-ray diffraction indicates that the Tween-dopa-LDH nanocomposite was formed by aggregation structure. From the TGA data, the Tween-80 loading on the surface of LDH and dopa-LDH was 8.6 and 7.4%, respectively. The effect of coating process on the dopa release from Tween-dopa-LDH nanocomposite was also studied. The release from Tween-dopa-LDH nanocomposite shows slower release compared to the release of the drug from dopa-LDH nanocomposite as done previously in our study, presumably due to the retarding shielding effect. The cell viability study using PC12 showed improved viability with Tween-80 coating on dopa-LDH nanocomposite as studied by mitochondrial dehydrogenase activity (MTT assay). PMID:24782658

Growth and characterization of single crystalline Zn0.8-xMg0.2AlxO films with UV band gap on GaN/Al2O3 template by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, Min-Sung; Lee, Byung-Teak

2013-02-01

Single crystalline Zn0.8-xMg0.2AlxO thin films were grown on a GaN/Al2O3 template. As the Al content is increased from 0 to 0.06, the optical band gap increased from 3.6 eV to 4.0 eV, growth rate decreased from 6 nm/min to 3 nm/min, and the surface roughness decreased from 17 nm to 0.8 nm. It was observed that interfacial layers were formed between the thin films and the substrates, identified as cubic MgAl2O4 in the case of ZnMgAlO/GaN and cubic MgO in the case of ZnMgO/GaN. It was proposed that the MgAl2O4 layer, with low lattice mismatch of ˜7% against the GaN substrate, acted as the buffer layer to correlate the film and the substrate, resulting in growth of the single crystalline thin films in the case of the ZnMgAlO/GaN system.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Coating transformations in the early stages of hot-dip galvannealing of steel sheet

NASA Astrophysics Data System (ADS)

McDevitt, Erin Todd

The present, comprehensive study of the reactions occurring early in galvanneal processing under conditions typical of commercial production represents the first detailed investigation of the microstructural evolution of the coating in the early stages of galvannealing and the results shed new light on the course of the coating microstructural development. During hot dipping, an Fe2Al5 inhibition layer formed on the surface of the steel substrate in the first instants of immersion in Zn baths containing as low as 0.10 wt.% Al. When hot-dipping in a 0.14 wt.% Al, the as-dipped coating microstructure consisted of an Fe2Al 5 layer on the steel surface. That layer was covered by a layer of the Fe-Zn compound Gamma1, which was covered by the zeta phase or unalloyed Zn. Substrate chemistry did not affect coating microstructure development in the bath. Thermodynamic predictions of the precipitation behavior during the bath reactions agrees well with experimental observations. A mechanism for coating microstructure development in the Zn bath which is consistent with all the experimental results is proposed. From this information, the metallurgical variables which govern inhibition layer formation are discerned. The breakdown of the Fe2Al5 inhibition layer during galvannealing at 500°C occurred without the formation of outbursts. Instead, the grain boundary diffusion of Al into the steel substrate accounted for dissolution of the inhibition layer in the first second of galvannealing. A mechanism for inhibition layer breakdown is presented. P-additions affected only the rate at which the inhibition layer dissolved and did not affect the rate of Fe-Zn compound formation. P in the substrate blocked grain boundary diffusion of Al into the substrate thus slowing inhibition layer dissolution. The slower overall galvannealing behavior often observed on P-bearing substrates is due to a longer period of inhibition layer survival which results in a longer incubation period for the initiation of the formation of Fe-Zn compounds. The coating solidified after inhibition layer dissolution by the continuous formation of new delta grains from the liquid at the solidification front. The microstructural evolution of the entire coating, including the formation of Gamma and Gammal, during solidification is also presented.

Structure and Stoichiometry of MgxZny in Hot-Dipped Zn-Mg-Al Coating Layer on Interstitial-Free Steel

NASA Astrophysics Data System (ADS)

Kim, Jaenam; Lee, Chongsoo; Jin, Youngsool

2018-03-01

Correlations of stoichiometry and phase structure of MgxZny in hot-dipped Zn-Mg-Al coating layer which were modified by additive element have been established on the bases of diffraction and phase transformation principles. X-ray diffraction (XRD) results showed that MgxZny in the Zn-Mg-Al coating layers consist of Mg2Zn11 and MgZn2. The additive elements had a significant effect on the phase fraction of Mg2Zn11 while the Mg/Al ratio had a negligible effect. Transmission electron microscope (TEM) assisted selected area electron diffraction (SAED) results of small areas MgxZny were indexed dominantly as MgZn2 which have different Mg/Zn stoichiometry between 0.10 and 0.18. It is assumed that the MgxZny have deviated stoichiometry of the phase structure with additive element. The deviated Mg2Zn11 phase structure was interpreted as base-centered orthorhombic by applying two theoretical validity: a structure factor rule explained why the base-centered orthorhombic Mg2Zn11 has less reciprocal lattice reflections in the SAED compared to hexagonal MgZn2, and a phase transformation model elucidated its reasonable lattice point sharing of the corresponding unit cell during hexagonal MgZn2 (a, b = 0.5252 nm, c = 0.8577 nm) transform to intermediate tetragonal and final base-centered orthorhombic Mg2Zn11 (a = 0.8575 nm, b = 0.8874 nm, c = 0.8771 nm) in the equilibrium state.

A first principles study of the properties of Al:ZnO and its adhesion to Ag in an optical coating

NASA Astrophysics Data System (ADS)

Lin, Zheshuai; Bristowe, Paul D.

2009-07-01

A first principles density functional study of the atomistic properties of Al:ZnO and its adhesion to Ag is presented. Optical coatings often contain interfaces between ZnO (0001) and Ag (111) layers whose bonding can be improved by incorporating small amounts of Al into the ZnO but the underlying strengthening mechanism remains unclear. It is assumed that Al relaxes the internal compressive stress in the film but the situation is complicated by the presence of hydrogen and/or water which can adsorb on the ZnO surface during fabrication of the coating. Hydrogen and/or water are known to weaken the Ag/ZnO interface particularly when it is O terminated. In this paper it is shown that aluminum substitutes on Zn sites in ZnO and this does indeed reduce the internal stress in the layer under compression. However, it is also shown that Al segregates to the ZnO surface when it is O terminated (but not Zn terminated) and this reduces the propensity for hydrogen adsorption. Thus by eliminating some of the hydrogen from the ZnO surface which is more likely to be O terminated than Zn terminated under ambient conditions, the strength of the Ag/ZnO interface can be increased. The effect of aluminum incorporation into the ZnO layer is therefore twofold: it relaxes the residual stresses in the coating and also improves the chemical bonding at the metal/oxide interface by removing the weakening effects of gaseous adsorption. The changes in interfacial bonding are explained in terms of an electron redistribution and compensation model.

Chemical Functionalization, Self-Assembly, and Applications of Nanomaterials and Nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiao, Tifeng; Yan, Xingbin; Balan, Lavinia

2014-01-01

This special issue addresses the research studies on chemical functionalization, self-assembly, and applications of nanomaterials and nanocomposites. It contains twentyfour articles including two reviews and twenty-two research articles. It is used to create new functional nanomaterials and nanocomposites with a variety of sizes and morphologies such as Zn/Al layered double hydroxide, tin oxide nanowires, FeOOH-modified anion resin, Au nanoclusters silica composite nanospheres, Ti-doped ZnO sol-composite films, TiO2/ZnO composite, graphene oxide nanocomposites, LiFePO4/C nanocomposites, and chitosan nanoparticles. These nanomaterials and nanocomposites have widespread applications in tissue engineering, antitumor, sensors, photoluminescence, electrochemical, and catalytic properties. In addition, this themed issue includes somemore » research articles about self-assembly systems covering organogels and Langmuir films. Furthermore, B. Blasiak et al. performed a literature survey on the recent advances in production, functionalization, toxicity reduction, and application of nanoparticles in cancer diagnosis, treatment, and treatment monitoring. P. Colson et al. performed a literature survey on the recent advances in nanosphere lithography due to its compatibility with wafer-scale processes as well as its potential to manufacture a wide variety of homogeneous one-, two-, or three-dimensional nanostructures.« less

New layered double hydroxides by prepared by the intercalation of gibbsite

NASA Astrophysics Data System (ADS)

Rees, Jennifer R.; Burden, Chloe S.; Fogg, Andrew M.

2015-04-01

New layered double hydroxides (LDHs) with the composition [MAl4(OH)12]Cl2·1.5H2O (M=Co, Ni) have been prepared by reacting gibbsite, γ-Al(OH)3, with the appropriate chloride salt in a synthesis in which the water of crystallization is the only solvent present and fully characterized. These LDHs have been shown to undergo facile anion exchange reactions with both organic and inorganic anions at room temperature making them comparable to other LDHs in this respect. Reactions under the same conditions with CuCl2·2H2O and ZnCl2 failed to form the desired LDHs but those with nitrate salts did lead to the formation of the previously reported [MAl4(OH)12](NO3)2·1.5H2O (M=Co, Ni) compounds.

Effect of Mg on the Microstructure and Corrosion Resistance of the Continuously Hot-Dip Galvanizing Zn-Mg Coating.

PubMed

Dong, Anping; Li, Baoping; Lu, Yanling; Zhu, Guoliang; Xing, Hui; Shu, Da; Sun, Baode; Wang, Jun

2017-08-22

The microstructure of continuously hot-dip galvanizing Zn-Mg coating was investigated in order to obtain the mechanism of the effects of Mg on the corrosion resistance. In this paper, the vertical section of the Zn-0.20 wt % Al-Mg ternary phase diagram near the Al-low corner was calculated. The results indicates that the phase composition of the Zn-0.20 wt % Al-Mg ternary phase diagram near the Al-low corner is the same as Zn-Mg binary phase diagram, suggesting Al in the Zn-Mg (ZM) coatings mainly concentrates on the interfacial layer between the coating and steel substrate. The microstructure of continuously hot-dip galvanizing ZM coatings with 0.20 wt % Al containing 1.0-3.0 wt % Mg was investigated using tunneling electron microscopy (TEM). The morphology of Zn in the coating changes from bulk to strip and finally to mesh-like, and the MgZn₂ changes from rod-like to mesh-like with the Mg content increasing. Al in the ZM coatings mainly segregates at the Fe₂Al₅ inhibition layer and the Mg added to the Zn bath makes this inhibition layer thinner and uneven. Compared to GI coating, the time of the first red rust appears increases by more than two-fold and expansion rate of red rust reduces by more than four-fold in terms of salt spray experiment. The ZM coating containing 2.0 wt % Mg has the best corrosion resistance. The enhanced corrosion resistance of ZM coatings mainly depends on different corrosion products.

Theoretical investigation of surface acoustic wave in the new, three-layered structure: ZnO/AlN/diamond.

PubMed

El Hakiki, Mohamed; Elmazria, Omar; Alnot, Patrick

2007-03-01

The new layered structure, ZnO/AlN/diamond, for surface acoustic wave (SAW) devices is investigated for gigahertz-band applications. This structure combines the advantages of both piezoelectric materials, with a high electromechanical coupling coefficient (K2) of ZnO and high acoustic velocity of AlN. Theoretical results show that Rayleigh mode SAWs with large phase velocities up to 12,200 m/s and large K2 from 1 to 3% were generated with this new structure.

Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Li; Chen, Xinliang; Zhou, Zhongxin; Guo, Sheng; Zhao, Ying; Zhang, Xiaodan

2018-03-01

Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 °C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10‑3 Ω·cm and high optical transmittance deposited at 150 °C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707) and the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900).

Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima; Tripathi, Shweta; Chakrabarti, P.

2016-03-01

In this paper, structural, electrical and ultraviolet photodetection parameters of RF sputtered-ZnO/Si heterojunction diodes are analyzed. In this work, ZnO thin film was deposited on bare Si substrate as well as Si substrate coated with ultrathin ZnO seed layer to exhibit the effect of seed layer on device performance. AFM image of as-grown ZnO films have exhibited the uniform growth ZnO film over the whole Si substrate with average roughness of 3.2 nm and 2.83 nm for ZnO with and without seed layer respectively. Stronger peak intensity along (002) direction, as shown in XRD spectra confirm that ZnO film grown on ZnO seed layer is having more stable wurtzite structure. Ti/Al point contacts were deposited on top of the ZnO film and a layer of Al was deposited on bottom of Si substrate for using as ohmic contacts for further device characterization at dark and under UV light of 365 nm wavelength. This process is repeated for both the films sequentially. The photo-responsivity of our proposed devices is calculated as 0.34 A/W for seed layer-mediated devices and 0.26 A/W for devices without seed layer. These values are very high as compare to the reported value of photo-responsivity for same kind of ZnO/Si heterojunction device prototypes prepared by other techniques.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

PubMed

Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

2016-09-07

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance.

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Kawamura, Yumi; Tani, Mai; Hattori, Nozomu; Miyatake, Naomasa; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

2012-02-01

We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. We deposited the ZnO channel layer by PA-ALD at 100 or 300 °C, and fabricated TFTs. The transfer characteristic of the 300 °C-deposited ZnO TFT exhibited high mobility (5.7 cm2 V-1 s-1), although the threshold voltage largely shifted toward the negative (-16 V). Furthermore, we deposited Al2O3 thin film as a gate insulator by PA-ALD at 100 °C for the low-temperature TFT fabrication process. In the case of ZnO TFTs with the Al2O3 gate insulator, the shift of the threshold voltage improved (-0.1 V). This improvement of the negative shift seems to be due to the negative charges of the Al2O3 film deposited by PA-ALD. On the basis of the experimental results, we confirmed that the threshold voltage of ZnO TFTs is controlled by PA-ALD for the deposition of the gate insulator.

Blue photon management by inhouse grown ZnO:Al cathode for enhanced photostability in polymer solar cells

DOE PAGES

Bhattacharya, Joydeep; Peer, Akshit; Joshi, Pranav H.; ...

2018-02-21

Here, we report the improvement in photostability of P3HT:PC 60BM based bulk heterojunction solar cells deposited on Al-doped ZnO as a cathode layer replacing ITO as regularly used TCO in cells with N-I-P configuration. We experimentally and theoretically demonstrate that use of thicker ZnO:Al as cathode can successfully cut down the rate of photodegradation in short circuit current by ~40% and open circuit voltage by ~30% compared to the control device made on ITO based cathode. This effective reduction in photodegradation is understood to be coming from the absorption of ultraviolet and blue photon in the cathode layer itself. Themore » loss in short circuit current due to the loss of blue photon in EQE is compensated by higher FF (lower series resistance) due to thicker ZnO:Al layer resulting in final device efficiency almost uncompromised with added benefit of reduced photo degradation. The experimental results are supported with optical simulations which show more absorption in the short wavelength region for the thicker ZnO films, compared to ITO films, deposited on glass substrates. This work also proposes using ZnO:Al cathode as a template for random textured front surface to potentially increase short circuit current by increase in photon absorption in active layer matrix by light scattering techniques. Our results provide an inexpensive pathway for improving the stability of organic photovoltaics without compromising the device performance.« less

Blue photon management by inhouse grown ZnO:Al cathode for enhanced photostability in polymer solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, Joydeep; Peer, Akshit; Joshi, Pranav H.

Here, we report the improvement in photostability of P3HT:PC 60BM based bulk heterojunction solar cells deposited on Al-doped ZnO as a cathode layer replacing ITO as regularly used TCO in cells with N-I-P configuration. We experimentally and theoretically demonstrate that use of thicker ZnO:Al as cathode can successfully cut down the rate of photodegradation in short circuit current by ~40% and open circuit voltage by ~30% compared to the control device made on ITO based cathode. This effective reduction in photodegradation is understood to be coming from the absorption of ultraviolet and blue photon in the cathode layer itself. Themore » loss in short circuit current due to the loss of blue photon in EQE is compensated by higher FF (lower series resistance) due to thicker ZnO:Al layer resulting in final device efficiency almost uncompromised with added benefit of reduced photo degradation. The experimental results are supported with optical simulations which show more absorption in the short wavelength region for the thicker ZnO films, compared to ITO films, deposited on glass substrates. This work also proposes using ZnO:Al cathode as a template for random textured front surface to potentially increase short circuit current by increase in photon absorption in active layer matrix by light scattering techniques. Our results provide an inexpensive pathway for improving the stability of organic photovoltaics without compromising the device performance.« less

Synthesis and characterization of Cd Cr and Zn Cd Cr layered double hydroxides intercalated with dodecyl sulfate

NASA Astrophysics Data System (ADS)

Guo, Ying; Zhang, He; Zhao, Lan; Li, Guo-Dong; Chen, Jie-Sheng; Xu, Lin

2005-06-01

Cd-Cr and Zn-Cd-Cr layered double hydroxides (CdCr-LDH and ZnCdCr-LDH) containing alkyl sulfate as the interlamellar anion have been prepared through a coprecipitation technique. The resulting compounds were characterized using X-ray diffraction, infrared spectroscopy, thermogravimetric analysis, and scanning electron microscopy. Magnetic property measurements indicate that antiferromagnetic interactions occur between the chromium ions in the two compounds at low temperatures. The introduction of zinc influences the ligand field of Cr III and the Cr III-Cr III interactions in the LDH compound. It is found that both CdCr-LDH and ZnCdCr-LDH can be delaminated by dispersion in formamide, leading to translucent and stable colloidal solutions.

Mg-Al and Zn-Al Layered Double Hydroxides Promote Dynamic Expression of Marker Genes in Osteogenic Differentiation by Modulating Mitogen-Activated Protein Kinases.

PubMed

Kang, Ha Ram; da Costa Fernandes, Célio Junior; da Silva, Rodrigo Augusto; Constantino, Vera Regina Leopoldo; Koh, Ivan Hong Jun; Zambuzzi, Willian F

2018-02-01

The effect of LDH samples comprised of chloride anions intercalated between positive layers of magnesium/aluminum (Mg-Al LDH) or zinc/aluminum (Zn-Al LDH) chemical composition on pre-osteoblast performance is investigated. Non-cytotoxic concentrations of both LDHs modulated pre-osteoblast adhesion by triggering cytoskeleton rearrangement dependent on recruiting of Cofilin, which is modulated by the inhibition of the Protein Phosphatase 2A (PP2A), culminating in osteoblast differentiation with a significant increase of osteogenic marker genes. The alkaline phosphatase (ALP) and bone sialoprotein (BSP) are significantly up-modulated by both LDHs; however, Mg-Al LDH nanomaterial promoted even more significance than both experimental controls, while the phosphorylations of mitogen-activated protein kinase (MAPKs)- extracellular signal-regulated kinases (ERK) and c-Jun N-terminal kinase (JNK) significantly increased. MAPK signaling is necessary to activate Runt-related transcription factor 2 (RUNX2) gene. Concomitantly, it is also investigated whether challenged osteoblasts are able to modulate osteoclastogenesis by investigating both osteoprotegerin (OPG) and Receptor activator of nuclear factor kappa-ligand (RANKL) in this model; a dynamic reprogramming of both these genes is found, suggesting LDHs in modulating osteoclastogenesis. These results suggest that LDHs interfere in bone remodeling, and they can be considered as nanomaterials in graft-based bone healing or drug-delivery materials for bone disorders. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of Al and Mg Contents on Wettability and Reactivity of Molten Zn-Al-Mg Alloys on Steel Sheets Covered with MnO and SiO2 Layers

NASA Astrophysics Data System (ADS)

Huh, Joo-Youl; Hwang, Min-Je; Shim, Seung-Woo; Kim, Tae-Chul; Kim, Jong-Sang

2018-05-01

The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) SiO2-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at 460 °C and the variation in the contact angles (θc) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the a-SiO2-covered steel exhibited nonreactive, nonwetting (θc > 90°) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the a-SiO2 layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the a-SiO2 layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and SiO2, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

Layered Double Hydroxides: Potential Release-on-Demand Fertilizers for Plant Zinc Nutrition.

PubMed

López-Rayo, Sandra; Imran, Ahmad; Bruun Hansen, Hans Chr; Schjoerring, Jan K; Magid, Jakob

2017-10-11

A novel zinc (Zn) fertilizer concept based on Zn-doped layered double hydroxides (Zn-doped Mg-Fe-LDHs) has been investigated. Zn-doped Mg-Fe-LDHs were synthesized, their chemical composition was analyzed, and their nutrient release was studied in buffered solutions with different pH values. Uptake of Zn by barley (Hordeum vulgare cv. Antonia) was evaluated in short- (8 weeks), medium- (11 weeks), and long-term (28 weeks) experiments in quartz sand and in a calcareous soil enriched with Zn-doped Mg-Fe-LDHs. The Zn release rate of the Zn-doped Mg-Fe-LDHs was described by a first-order kinetics equation showing maximum release at pH 5.2, reaching approximately 45% of the total Zn content. The Zn concentrations in the plants receiving the LDHs were between 2- and 9.5-fold higher than those in plants without Zn addition. A positive effect of the LDHs was also found in soil. This work documents the long-term Zn release capacity of LDHs complying with a release-on-demand behavior and serves as proof-of-concept that Zn-doped Mg-Fe-LDHs can be used as Zn fertilizers.

2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

NASA Astrophysics Data System (ADS)

Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

2015-10-01

Bi2S3/ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi2S3/ZnS composite. The results shown that Bi2S3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi2S3/ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi2S3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi2S3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi2S3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process.

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

PubMed Central

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-01-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

NASA Astrophysics Data System (ADS)

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-12-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400-900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

Layered double hydroxide using hydrothermal treatment: morphology evolution, intercalation and release kinetics of diclofenac sodium

NASA Astrophysics Data System (ADS)

Joy, Mathew; Iyengar, Srividhya J.; Chakraborty, Jui; Ghosh, Swapankumar

2017-12-01

The present work demonstrates the possibilities of hydrothermal transformation of Zn-Al layered double hydroxide (LDH) nanostructure by varying the synthetic conditions. The manipulation in washing step before hydrothermal treatment allows control over crystal morphologies, size and stability of their aqueous solutions. We examined the crystal growth process in the presence and the absence of extra ions during hydrothermal treatment and its dependence on the drug (diclofenac sodium (Dic-Na)) loading and release processes. Hexagonal plate-like crystals show sustained release with ˜90% of the drug from the matrix in a week, suggesting the applicability of LDH nanohybrids in sustained drug delivery systems. The fits to the release kinetics data indicated the drug release as a diffusion-controlled release process. LDH with rod-like morphology shows excellent colloidal stability in aqueous suspension, as studied by photon correlation spectroscopy.

Fabrication of nanocomposites by collagen templated synthesis of layered double hydroxides assisted by an acrylic silane coupling agent

NASA Astrophysics Data System (ADS)

Sun, Yanqing; Zhou, Yuming; Wang, Zhiqiang; Ye, Xiaoyun

2009-02-01

The purpose of this study was to control the fabrication of nanocomposites at the nanoscale interface by collagen templated synthesis of Zn-Al layered double hydroxides (LDHs) assisted by γ-methacryloxypropyl trimethoxy silane (KH570) with further treatment of graft polymerization. The results show that collagen directs the growth of LDHs into curved nanorods by length of 300 nm in perfect consistency with collagen chain in both the size and flexility under the essential hydrophobic environment on the solid surface provided by KH570. The nanorods are aggregated into thin curved platelets due to strong interaction between collagen molecules themselves and strong interaction between collagen and LDH sheets. By further treatment of graft polymerization, the adjacent curved platelets encircle into numerous hollows via chemical linkage, achieving polyporous nanocomposites. Nanohybrid materials with this structure are especially interesting for applications as biosensors or supported catalysis.

Aluminum anode for aluminum-air battery - Part II: Influence of In addition on the electrochemical characteristics of Al-Zn alloy in alkaline solution

NASA Astrophysics Data System (ADS)

Park, In-Jun; Choi, Seok-Ryul; Kim, Jung-Gu

2017-07-01

Effects of Zn and In additions on the aluminum anode for Al-air battery in alkaline solution are examined by the self-corrosion rate, cell voltage, current-voltage characteristics, anodic polarization, discharge performance and AC impedance measurements. The passivation behavior of Zn-added anode during anodic polarization decreases the discharge performance of Al-air battery. The addition of In to Al-Zn anode reduces the formation of Zn passivation film by repeated adsorption and desorption behavior of In ion onto anode surface. The attenuated Zn passive layer by In ion attack leads to the improvement of discharge performance of Al-air battery.

Growth Kinetics of Magnesio-Aluminate Spinel in Al/Mg Lamellar Composite Interface

NASA Astrophysics Data System (ADS)

Fouad, Yasser; Rabeeh, Bakr Mohamed

The synthesis of Mg-Al2O3 double layered interface is introduced via the application of hot isostatic pressing, HIPing, in Al-Mg foils. Polycrystalline spinel layers are grown experimentally at the interfacial contacts between Al-Mg foils. The growth behavior of the spinel layers along with the kinetic parameters characterizing interface motion and long-range diffusion is established. Low melting depressant (LMD), Zn, and alloying element segregation tends to form micro laminated and/or Nano structure interphase in a lamellar composite solid state processing. Nano composite ceramic interphase materials offer interesting mechanical properties not achievable in other materials, such as superplastic flow and metal-like machinability. Microstructural characterization, mechanical characterization is also established via optical microscopy scanning electron microscopy, energy dispersive X-ray spectroscopy and tensile testing. Chemical and mechanical bonding via inter diffusion processing with alloy segregation are dominant for interphase kinetics. Mechanical characterization with interfacial shear strength is also introduced. HIPing processing is successfully applied on 6082 Al-alloy and AZ31 magnesium alloy for either particulate or micro-laminated interfacial composite processing. The interphase kinetic established through localized micro plasticity, metal flow, alloy segregation and delocalized Al oxide and Mg oxide. The kinetic of interface/interphase induce new nontraditional crack mitigation a long with new bridging and toughening mechanisms.

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

NASA Astrophysics Data System (ADS)

Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2017-03-01

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/ I off ratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

Layered double hydroxide stability. 2. Formation of Cr(III)-containing layered double hydroxides directly from solution

NASA Technical Reports Server (NTRS)

Boclair, J. W.; Braterman, P. S.; Jiang, J.; Lou, S.; Yarberry, F.

1999-01-01

Solutions containing divalent metal [M(II) = Mg2+, Zn2+, Co2+, Ni2+, Mn2+] chlorides and CrCl3 6H2O were titrated with NaOH to yield, for M(II) = Zn, Co, and Ni, hydrotalcite-like layered double hydroxides (LDHs), [[M(II)]1-z[Cr(III)]z(OH)2][Cl]z yH2O, in a single step, without intermediate formation of chromium hydroxide. Analysis of the resultant titration curves yields solubility constants for these compounds. These are in the order Zn < Ni approximately Co, with a clear preference for formation of the phase with z = 1/3. With Mg2+ as chloride, titration gives a mixture of Cr(OH)3 and Mg(OH)2, but the metal sulfates give Mg2Cr(OH)6 1/2(SO4) by a two-step process. Titrimetric and spectroscopic evidence suggests short-range cation order in the one-step LDH systems.

Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

NASA Astrophysics Data System (ADS)

Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

2011-05-01

The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

S-Layer Nanosheet Binding of Zn and Gd

DOE Data Explorer

Ajo-Franklin, Caroline (ORCID:0000000189096712); Charrier, Marimikel; Yang, Li

2016-04-15

This data characterizes binding of Zn2+ and Gd3+ to engineered nanosheets at 40C and in a brine solution. The engineered nanosheets are composed of surface-layer (S-layer) proteins which form 2 D crystalline sheets and display Zn2+- or Gd3+-binding domains on these sheets. Their ability to bind Zn2+ is compared to S-layer nanosheets that do not contain Zn2+-binding domains. We found that the purification method of these nanosheets was a critical determinant of their function and thus have provided data on the binding from two different purification methods. A key distinction of this dataset from other datasets is that the engineered nanosheets were expressed and purified from E. coli grown at 37C as described in (Kinns, 2010; Howorka, 2000), Kinns, H., et al. Identifying assembly-inhibiting and assembly-tolerant sites in the SbsB S-layer protein from Geobacillus stearothermophilus. Journal of Molecular Biology, 2010. 395(4): p. 742-753. Howorka, S., et al. Surface-accessible residues in the monomeric and assembled forms of a bacterial surface layer protein. Journal of Biological Chemistry, 2000. 275(48): p. 37876-37886.

Synthesis and characterization of Zn-Ti layered double hydroxide intercalated with cinnamic acid for cosmetic application

NASA Astrophysics Data System (ADS)

Li, Yong; Tang, Liping; Ma, Xinxu; Wang, Xinrui; Zhou, Wei; Bai, Dongsheng

2017-08-01

The use of sunscreen is recently growing and their efficacy and safety must be taken into account since they are applied on the skin frequently. In this work, an organic ultraviolet (UV) ray absorbent, cinnamic acid (CA) was intercalated into Zn-Ti layered double hydroxide (LDH) by anion-exchange reaction. ZnTi-CA-LDH, a new type of host-guest UV-blocking material has been synthesized. Detailed structural and surface morphology of ZnTi-CA-LDH were characterized by XRD, FT-IR, SEM and TEM. ZnTi-CA-LDH exhibits a superior UV blocking ability compared to pure CA and ZnTi-CO3-LDH. The thermal stability of the intercalated ZnTi-CA-LDH was investigated by TG-DTA, which showed that the thermostability of CA was markedly enhanced after intercalation into ZnTi-CO3-LDH. The EPR data showed greatly decreased photocatalytic activity compared to common inorganic UV blocking agents TiO2 and ZnO. Furthermore, the sample was formulated in a sunscreen cream to study the matrix protective effect towards UV rays.

Theoretical studies on a (FGPM) system with Gaussian profile for a zero TCD SAW devices

NASA Astrophysics Data System (ADS)

Gharsellaoui, Rim; Takali, Farid; Njeh, Anouar

We investigate the propagation of surface wave in a functionally graded piezoelectric material layer ZnO/AlN/ZnO on α-Al2O3 substrate in this study. The influence of buffer layer thickness on the temperature coefficient of delay (TCD) is studied. The stiffness matrix method (SMM) and the ordinary differential equation (ODE), treat the electrical and mechanical gradients. We demonstrate that for the second mode, the largest coupling coefficient of (5.43%) associated with a phase velocity of (5602 m/s) and a TCD of (66.16 ppm/°C) can be found for the (ZnO/AlN/ZnO)/R-Al2O3 structure. The simulation results indicate that for the first mode, a temperature compensation of (0 ppm/°C) and high velocities of up (6000 m/s).

Structural classification of RAO3( MO) n compounds ( R =Sc, In, Y, or lanthanides; A =Fe(III), Ga, Cr, or Al; M =divalent cation; n = 1-11)

NASA Astrophysics Data System (ADS)

Kimizuka, Noboru; Mohri, Takahiko

1989-01-01

A series of new compounds RAO3( MO) n ( n = 1-11) having spinel, YbFe 2O 4, or InFeO 3(ZnO) n types of structures were newly synthesized ( R =Sc, In, Y, Lu, Yb, Tm, or Er; A =Fe(III), Ga, Cr, or Al; M =Mg, Mn, Fe(II), Co, Ni, Zn, or Cd) at elevated temperatures. The conditions of synthesis and the lattice constants for these compounds are reported. The stacking sequences of the InO 1.5, (FeZn)O 2.5, and ZnO layers for InFeO 3(ZnO) 10 and the TmO 1.5, (AlZn)O 2.5, and ZnO layers for TmAlO 3(ZnO) 11 are presented, respectively. The crystal structures of the( RAO3) m( MO) n phases ( R =Sc, In, Y, or lanthanide elements; A =Fe(III), Ga, Cr, or Al; M =divalent cation elements; m and n =integer) are classified into four crystal structure types (K 2NiF 4, CaFe 2O 4, YbFe 2O 4, and spinel), based upon the constituent cations R, A, and M

Layered assembly of graphene oxide and Co-Al layered double hydroxide nanosheets as electrode materials for supercapacitors.

PubMed

Wang, Lei; Wang, Dong; Dong, Xin Yi; Zhang, Zhi Jun; Pei, Xian Feng; Chen, Xin Jiang; Chen, Biao; Jin, Jian

2011-03-28

An innovative strategy of fabricating electrode material by layered assembling two kinds of one-atom-thick sheets, carboxylated graphene oxide (GO) and Co-Al layered double hydroxide nanosheet (Co-Al LDH-NS) for the application as a pseudocapacitor is reported. The Co-Al LDH-NS/GO composite exhibits good energy storage properties.

Influence of Li Addition to Zn-Al Alloys on Cu Substrate During Spreading Test and After Aging Treatment

NASA Astrophysics Data System (ADS)

Gancarz, Tomasz; Pstrus, Janusz; Cempura, Grzegorz; Berent, Katarzyna

2016-12-01

The spreading of Zn-Al eutectic-based alloys with 0.05 wt.%, 0.1 wt.%, and 0.2 wt.% Li on Cu substrate has been studied using the sessile drop method in presence of QJ201 flux. Wetting tests were performed after 1 min, 3 min, 8 min, 15 min, 30 min, and 60 min of contact at temperatures of 475°C, 500°C, 525°C, and 550°C. Samples after spreading at 500°C for 1 min were subjected to aging for 1 day, 10 days, and 30 days at temperature of 120°C, 170°C, and 250°C. The spreadability of eutectic Zn-5.3Al alloy with different Li contents on Cu substrate was determined in accordance with ISO 9455-10:2013-03. Selected solidified solder-substrate couples were, after spreading and aging tests, cross-sectioned and subjected to scanning electron microscopy, energy-dispersive spectroscopy (EDS), and x-ray diffraction (XRD) analysis of the interfacial microstructure. An experiment was designed to demonstrate the effect of Li addition on the kinetics of the formation and growth of CuZn, Cu5Zn8, and CuZn4 intermetallic compound (IMC) phases, during spreading and aging. The IMC layers formed at the interface were identified using XRD and EDS analyses. Increasing addition of Li to Zn-Al alloy caused a reduction in the thickness of the IMC layer at the interface during spreading, and an increase during aging. The activation energy was calculated, being found to increase for the Cu5Zn8 phase but decrease for the CuZn and CuZn4 phases with increasing Li content in the Zn-Al-Li alloys. The highest value of 142 kJ mol-1 was obtained for Zn-Al with 1.0 Li during spreading and 69.2 kJ mol-1 for Zn-Al with 0.05 Li during aging. Aging at 250°C caused an increase in only the Cu5Zn8 layer, which has the lowest Gibbs energy in the Cu-Zn system. This result is connected to the high diffusion of Cu from the substrate to the solder.

Influence of Post-Heat Treatment of ZnO:Al Transparent Electrode for Copper Indium Gallium Selenide Thin Film Solar Cell.

PubMed

Eom, Taewoo; Park, Jeong Eun; Park, Sang Yong; Park, Jeong Hoon; Bweupe, Jackson; Lim, Donggun

2018-09-01

Copper indium gallium selenide (CIGS) thin film solar cells have been regarded as a candidate for energy conversion devices owing to their high absorption coefficient, high temperature stability, and low cost. ZnO:Al thin film is commonly used in CIGS solar cells as a window layer. In this study, ZnO:Al films were deposited on glass under various post-heat temperature using RF sputtering to observe the characteristics of ZnO:Al films such as Hall mobility, carrier concentration, and resistivity; subsequently, the ZnO:Al films were applied to a CIGS solar cell as a window. CIGS solar cells fabricated with various ZnO:Al films were analyzed in order to investigate their influence. The test results showed that the improvement of ZnO:Al characteristics affects Jsc and Voc in the solar cell through reduced recombination and increase of optical property.

The structural and optical properties of Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films from the first principles calculations

NASA Astrophysics Data System (ADS)

Zhang, Wenshu; Hu, Huijun; Zhang, Caili; Li, Jianguo; Li, Yuping; Ling, Lixia; Han, Peide

2017-12-01

Based on the density functional theory, the structural stability and optical properties of undoped and Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films are investigated. The good stability of the films based on the ZnO (0 0 0 1) can be obtained when the layer is larger than 12. Moreover, the dielectric function, refractive index, absorption, and reflectivity of doped ZnO nano thin films have been analyzed in detail. In the visible light range, the values of ZnO films from 12 to 24 layers are all smaller than those of the bulk. And with the augment of the layers, the values keep increasing. All the results signify that the nano film of 12 layers possesses the lowest reflectivity and weakest absorption. In addition, there is an evident impact of some doped element on the properties of nano films. The absorption and reflectivity of Ti, Si-doped ZnO nano thin films are higher than those of the clean films, while Al, B-doped are lower, especially B-doped. Moreover, the conductivity of the doped structure is better than that of the bulk. Thus, the B-doped ZnO nano thin films could be potential candidate materials of transparent conductive films.

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.

PubMed

Zhang, Zhaojing; Yao, Liyong; Zhang, Yi; Ao, Jianping; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming-Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2018-02-01

Double layer distribution exists in Cu 2 SnZnSe 4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe 2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe x mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu-Sn-Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu 2 Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe 2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm 2 and a CZTSe solar cell with efficiency of 7.2% is fabricated.

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.

PubMed

Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2017-12-01

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O 2 at 300 °C exhibit a low leakage current of 2.5 × 10 -13 A, I on /I off ratio of 1.4 × 10 7 , subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

Use of anionic clays for photoprotection and sunscreen photostability: Hydrotalcites and phenylbenzimidazole sulfonic acid

NASA Astrophysics Data System (ADS)

Perioli, Luana; Ambrogi, Valeria; Rossi, Carlo; Latterini, Loredana; Nocchetti, Morena; Costantino, Umberto

2006-05-01

Layered double hydroxides of hydrotalcite (HTlc) type have many applications as matrices in pharmaceutical and cosmetic fields when intercalated with active species in anionic form. The aim of this work was to intercalate 2-phenyl-1H-benzimidazole-5-sulfonic acid (Eusolex 232) (EUS) as sunscreen molecule into hydrotalcites in order to obtain the sunscreen stabilization, the reduction of its photodegradation and the elimination of close contact between skin and filter. Hydrotalcites MgAl and ZnAl were used as hosts and the intercalation products obtained were characterized by TG, RX and DSC. They were also submitted to spectrophotometric assays in order to study the matrix influence on sunlight protection and on sunscreen photostability. These experiments showed that both MgAl and ZnAl HTlc intercalation products maintained the sunscreen properties and eusolex photodegradation was reduced. The in vitro EUS release from both formulations was almost negligible when compared with formulations containing free EUS. The EUS intercalation in HTlc and the respective formulations provided advantages in the maintenance of photoprotection efficacy, filter photostabilization and avoidance of a close contact between skin and filter, with consequent elimination of allergy problems and photocross reactions.

Thouless length and valley degeneracy factor of ZnMnO thin films with anisotropic, highly conductive surface layers

NASA Astrophysics Data System (ADS)

Vegesna, Sahitya V.; Bürger, Danilo; Patra, Rajkumar; Abendroth, Barbara; Skorupa, Ilona; Schmidt, Oliver G.; Schmidt, Heidemarie

2017-06-01

Isothermal magnetoresistance (MR) of n-type conducting Zn1-xMnxO thin films on a sapphire substrate with a Mn content of 5 at. % has been studied in in-plane and out-of-plane magnetic fields up to 6 T in the temperature range of 5 K to 300 K. During pulsed laser deposition of the ZnMnO thin films, we controlled the thickness and roughness of a highly conductive ZnMnO surface layer. The measured MR has been modeled with constant s-d exchange (0.2 eV in ZnMnO) and electron spin (S = 5/2 for Mn2+) for samples with a single two dimensional (2D) ZnMnO layer, a single three dimensional (3D) ZnMnO layer, or a 2D and 3D (2D + 3D) ZnMnO layer in parallel. The temperature dependence of modeled Thouless length LTh (LTh ˜ T-0.5) is in good agreement with the theory [Andrearczyk et al., Phys. Rev. B 72, 121309(R) (2005)]. The superimposed positive and negative MR model for ZnCoO thin films [Xu et al., Phys. Rev. B 76, 134417 (2007)] has been extended in order to account for the increase in the density of states close to the Fermi level of n-ZnMnO due to substitutional Mn2+ ions and their effect on the negative MR in ZnMnO.

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers.

PubMed

Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

2017-09-06

Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

PubMed Central

2014-01-01

To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively. PMID:25276101

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jun; Zhang, Zhi-Lin; Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072

RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD) Al{sub 2}O{sub 3} film were employed for thin film transistors (TFTs) as channel layer and gate insulator, respectively. To achieve HfInZnO-TFT with high performance and good bias stability, the thickness of HfInZnO active layer was optimized. The performance of HfInZnO-TFTs was found to be thickness dependent. As the HfInZnO active layer got thicker, the leakage current greatly increased from 1.73 × 10{sup −12} to 2.54 × 10{sup −8} A, the threshold voltage decreased from 7.4 to −4.7 V, while the subthreshold swing varied from 0.41 to 1.07 V/decade. Overall, themore » HfInZnO film showed superior performance, such as saturation mobility of 6.4 cm{sup 2}/V s, threshold voltage of 4.2 V, subthreshold swing of 0.43 V/decade, on/off current ratio of 3 × 10{sup 7} and V{sub th} shift of 3.6 V under V{sub GS}= 10 V for 7200 s. The results demonstrate the possibility of fabricating TFTs using HfInZnO film as active layer and using ALD Al{sub 2}O{sub 3} as gate insulator.« less

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

NASA Astrophysics Data System (ADS)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Calibrating NIST SRM 683 as A New International Reference Standard for Zn Isotopes

NASA Astrophysics Data System (ADS)

Yang, Y.; Zhang, X.; Yu, H.; Huang, F.

2017-12-01

Zinc isotopes have been widely applied in the cosmochemical, geochemical, and environmental studies (Moynier et al. 2017). Obtaining precise Zn isotopic data for inter-laboratory comparison is a prerequisite to these applications. Currently, the JMC3-0749L is the primary reference standard for Zn isotopes (Albarède 2004), but it is not commercially available now. Thus, it is necessary to calibrate a new international primary reference standard for Zn isotopic analysis. Chen et al. (2016) showed that NIST SRM 683 (a pure Zn metal nugget of 140 grams) has a δ66ZnJMC of 0.12‰, which is falling within the range of natural Zn isotopic compositions, and it may a good candidate for the next generation of international reference standard (Chen et al. 2016). In order to further examine whether NIST SRM 683 has a homogeneous Zn isotopic composition, we measured more NIST SRM 683 by double-spike methods using MC-ICPMS (Conway et al. 2013). The metal nuggets of NIST SRM 683 were intensively sampled by micro-drilling. Zinc isotope analyses for two nuggets show that they have δ66Zn of 0.14 ± 0.02‰ (2SD, N = 32) and 0.13 ± 0.02‰ (2SD, N = 33), respectively. These values are similar to those of two Zn metal nuggets (0.11 ± 0.02‰ vs. 0.12 ± 0.02‰) reported previously by Chen et al. (2016). We fully dissolved one nugget, producing pure Zn solution with identical Zn isotopic composition with the drilling samples. All results strongly support that NIST SRM 683 is homogeneous in Zn isotopic compositions which could be an ideal candidate for the next reference for Zn isotopes. Tests on more metal nuggets will be performed in a few months for further confirming the Zn isotope compositions and homogeneity. Reference: Albarède et al., 2004. 'The stable isotope geochemistry of copper and zinc', Reviews in Mineralogy and Geochemistry, 55: 409-27. Chen et al., 2016. 'Zinc Isotopic Compositions of NIST SRM 683 and Whole-Rock Reference Materials', Geostandards and Geoanalytical Research, 40: 417-32. Conway et al., 2013. 'A new method for precise determination of iron, zinc and cadmium stable isotope ratios in seawater by double-spike mass spectrometry', Analytica chimica acta, 793: 44-52. Moynier et al., 2017. 'The isotope geochemistry of zinc and copper', Reviews in Mineralogy and Geochemistry, 82: 543-600.

Wetting of Sn-Zn-Ga and Sn-Zn-Na Alloys on Al and Ni Substrate

NASA Astrophysics Data System (ADS)

Gancarz, Tomasz; Bobrowski, Piotr; Pawlak, Sylwia; Schell, Norbert; Chulist, Robert; Janik, Katarzyna

2018-01-01

Wetting of Al and Ni substrate by Sn-Zn eutectic-based alloys with 0.5 (wt.%) of Ga and 0.2 (wt.%) of Na was studied using the sessile drop method in the presence of ALU33® flux. Spreading tests were performed for 60 s, 180 s, and 480 s of contact, at temperatures of 503 K, 523 K and 553 K (230°C, 250°C, and 280°C). After cleaning the flux residue from solidified samples, the spreading areas of Sn-Zn0.5Ga and Sn-Zn0.2Na on Al and Ni substrate were determined. Selected, solidified solder-pad couples were cross-sectioned and subjected to scanning electron microscopy with energy dispersive spectroscopy, x-ray diffraction study and synchrotron measurements of the interfacial microstructure and identification of the phases. The growth of the intermetallic Ni5Zn21 phase layer was studied at the solder/Ni substrate interface, and the kinetics of the formation and growth of the intermetallic layer were determined. The formation of interlayers was not observed on the Al pads. On the contrary, dissolution of the Al substrate and migration of Al-rich particles into the bulk of the solder were observed.

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.

PubMed

Zhang, Lichun; Li, Qingshan; Shang, Liang; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2013-07-15

n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

Photocatalytic decomposition of Congo red under visible light irradiation using MgZnCr-TiO2 layered double hydroxide.

PubMed

Ma, Chi; Wang, Fenghua; Zhang, Chang; Yu, Zhigang; Wei, Jingjing; Yang, Zhongzhu; Li, Yongqiu; Li, Zihao; Zhu, Mengying; Shen, Liuqing; Zeng, Guangming

2017-02-01

The new nanophotocatalyst MgZnCr-TiO 2 was prepared by co-precipitation under different molar ratio of metals (Zn:Cr) and the loaded amount of TiO 2 . And it was characterized by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy et al. Langmuir model fitted well the adsorption isotherm with the value of R 2 0.9765, the maximum adsorption capacity was 526.32 mg g -1 , the adsorption followed pseudo second order kinetic by MgZnCr-TiO 2 (1:1:2-0.05). The photocatalytic oxidation of Congo red was used to determine the photocatalytic performance of MgZnCr-TiO 2 (1:1:2-0.05) under visible light irradiation, and the removal rate reached 98% after reaction for 40 min. The degradation mechanism of Congo red also was proposed, and the MgZnCr-TiO 2 (1:1:2-0.05) was stable after five cycles. Compared to the adsorption, Congo red was removed fundamentally by photocatalysis and it is expected to be an effective way to eliminate Congo red. Copyright © 2016 Elsevier Ltd. All rights reserved.

Band alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Yan, Baojun; Liu, Shulin; Yang, Yuzhen; Heng, Yuekun

2016-05-01

Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn0.8Al0.2O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn0.8Al0.2O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔEV) and conduction band offset (ΔEC) for the interface of the MgO/Zn0.8Al0.2O heterostructure have been constructed. An accurate value of ΔEV = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn0.8Al0.2O, a type-II heterojunction with a ΔEC of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.

Bimetallic Pt-Au Nanocatalysts on ZnO/Al2O3/Monolith for Air Pollution Control.

PubMed

Kim, Ki-Joong; Ahn, Ho-Geun

2015-08-01

The catalytic activity of a monolithic catalyst with nanosized Pt and Au particles on ZnO/Al2O3 (Pt-Au/ZnO/Al2O3/M) prepared by a wash-coat method was examined, specifically for toluene oxidation. Scanning electron microscopy image showed clearly the formation of a ZnO/Al2O3 layer on the monolith. Nanosized Pt-Au particles on ZnO/Al2O3/M with different sizes could be found in the Pt-Au/ZnO/Al2O3/M catalyst. The conversion of toluene decreased with increasing toluene concentration and was also largely affected by the feed flow rate. The Pt-Au/ZnO/Al2O3/M catalysts prepared in this work have almost the same activity (molecules of toluene per second) compared with a powder Pt-Au/ZnO/Al2O3 catalyst with the same loadings of Pt and Au components; thus this catalyst could be used in controlling air pollution with very low concentrations and high flow rate.

Electron Raman scattering in a strained ZnO/MgZnO double quantum well

NASA Astrophysics Data System (ADS)

Mojab-abpardeh, M.; Karimi, M. J.

2018-02-01

In this work, the electron Raman scattering in a strained ZnO / MgZnO double quantum wells is studied. The energy eigenvalues and the wave functions are obtained using the transfer matrix method. The effects of Mg composition, well width and barrier width on the internal electric field in well and barrier layers are investigated. Then, the influences of these parameters on the differential cross-section of electron Raman scattering are studied. Results indicate that the position, magnitude and the number of the peaks depend on the Mg composition, well width and barrier width.

Origin and migration of trace elements in the surface sediments of Majuro Atoll, Marshall Islands.

PubMed

Ito, Lisa; Omori, Takayuki; Yoneda, Minoru; Yamaguchi, Toru; Kobayashi, Ryuta; Takahashi, Yoshio

2018-07-01

The sediments of Majuro Atoll, Marshall Islands, consist of bioclastic materials, including foraminifera and coral debris. The sedimentary depth profiles of elements showed that various elements including zinc (Zn) and copper (Cu) were enriched in the upper layers of the islands of Majuro Atoll. Carbon-14 dating revealed that the sedimentation of the upper layer was completed before 1670 and 542 cal BP in Laura and Calalen, respectively. The enriched elements could be categorized by their origins: (a) terrestrial elements transported as dust (aluminum (Al) and rare earth elements (REEs)); (b) anthropogenic elements (Zn and Cu); and (c) elements supplied by seabirds (phosphorus (P)). From the results of the total amount of Al supplied to sediments for ca. 2000 years, Al in Majuro Atoll was suggested to be airborne origin. The enrichment factors of the elements normalized to Al concentration of continental crust showed that REEs were also transported as dust, while Zn and Cu were mainly of anthropogenic origin. The speciation analysis by X-ray absorption near-edge structure (XANES) showed the presence of Zn-Cu alloys originated from industrial products. It was also revealed that Zn was enriched in the surface due to anthropogenic emission after urbanization on Majuro Atoll and fixed by carbonate and phosphate at the upper layer, which inhibits migration of Zn into the deeper layer and its release to the groundwater and costal water. Hence, the fixation of heavy metals at the surface prevents their exposure to aquatic organisms and residents via fresh groundwater in the island. Copyright © 2018 Elsevier Ltd. All rights reserved.

Fabrication of White Organic Light Emitting Diode Using Two Types of Zn-Complexes as an Emitting Layer.

PubMed

Kim, Dong-Eun; Kwon, Young-Soo; Shin, Hoon-Kyu

2015-01-01

We have studied white OLED using two types of Zn-complexes as an emitting layer. We synthesized brand new two emissive materials, Zn(HPQ)2 as a yellow emitting material and Zn(HPB)2 as a blue emitting material. The Zn-complexes are low-molecular compounds and stable thermally. The fundamental structures of the fabricated OLED was ITO/NPB (40 nm)/Zn(HPB)2 (30 nm)/Zn(HPQ)2/LiF/Al. We varied the thickness of the Zn(HPQ)2 layer by 20, 30, and 40 nm. When the thickness of the Zn(HPQ)2 layer was 20 nm, the white emission was achieved. The maximum luminance was 12,000 cd/m2 at a current density of 800 mA/cm2. The CIE coordinates of the white emission were (0.319, 0.338) at an applied voltage of 10 V.

Structure of Li5AlS4 and comparison with other lithium-containing metal sulfides

NASA Astrophysics Data System (ADS)

Lim, Hanjin; Kim, Sung-Chul; Kim, Jaegyeom; Kim, Young-Il; Kim, Seung-Joo

2018-01-01

Lithium aluminum sulfide (Li5AlS4) was synthesized by solid state reaction, and its crystal structure was characterized by ab initio structure determination on the basis of powder neutron diffraction (ND) data. Li5AlS4 was found to have monoclinic unit cell (space group, P21/m) with the lattice parameters: a = 6.8583(4) Å, b = 7.8369(4) Å, c = 6.2488(4) Å, and β = 90.333(4)°. This structure is built from a hexagonal close-packed (hcp) arrangement of sulfur atoms with a stacking sequence of …ABAB…. The hcp sulfide lattice consists of two different double-sulfide layers alternately stacked along the c-axis. Between the first pair of sulfur layers all the tetrahedral interstices (T+ and T- sites) are filled with lithium and aluminum atoms. All octahedral interstices between the second pair of sulfur layers are occupied by the remaining lithium atoms. The structure of Li5AlS4 is compared with those of various lithium-containing metal sulfides like Li2FeS2, NaLiMS2 (M = Zn, Cd), Li4GeS4, LiM‧S2 (M‧ = Al, Ga, In) and γ-Li3PS4. Each sulfide represents a specific distribution of lithium atoms in the lattice depending on how the octahedral and tetrahedral interstitial sites are filled. The low ionic conductivity of Li5AlS4 (9.7 × 10-9 S cm-1 at 323 K) relative to other sulfides may be due to the highly-ordered distribution of the lithium atoms in the layered structure and the lack of adjacent void spaces that can be used for lithium ion hopping.

Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer

NASA Astrophysics Data System (ADS)

Ham, Jung Hoon; Oh, Do Hyun; Cho, Sung Hwan; Jung, Jae Hun; Kim, Tae Whan; Ryu, Eui Dock; Kim, Sang Wook

2009-03-01

Current-voltage (I-V) curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the I-V curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental I-V data.

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer

PubMed Central

Zhang, Zhaojing; Yao, Liyong; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming‐Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2017-01-01

Abstract Double layer distribution exists in Cu2SnZnSe4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double‐layer distribution of CZTSe film is eliminated entirely and the formation of MoSe2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSex mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu‐Sn‐Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu2Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm2 and a CZTSe solar cell with efficiency of 7.2% is fabricated. PMID:29610727

Improving the Carprofen Solubility: Synthesis of the Zn2Al-LDH Hybrid Compound.

PubMed

Capsoni, Doretta; Quinzeni, Irene; Bruni, Giovanna; Friuli, Valeria; Maggi, Lauretta; Bini, Marcella

2018-01-01

The development of efficient strategies for drug delivery is considerably desired. Indeed, often several issues such as the drug solubility, the control of the drug release rate, the targeted delivery of drugs, the drug bioavailability, and the minimization of secondary effects still present great obstacles. Different methodologies have been proposed, but the use of nano-hybrids compounds that combine organic and inorganic substances seems particularly promising. An interesting inorganic host is the layered double hydroxide (LDH) with a sheets structure and formula [M 2+ 1-x M 3+ x (OH) 2 ](A n- ) x/n yH 2 O (M 2+  = Zn, Mg; M 3+  = Al; A n-  = nitrates, carbonates, chlorides). The possibility to exchange these counterions with drug molecules makes these systems ideal candidates for the drug delivery. In this article, we synthesize by co-precipitation method the hybrid compound Carprofen-Zn 2 Al-LDH. Carprofen, a poorly soluble anti-inflammatory drug, could also benefit of the association with a natural antacid such as LDH, to reduce the gastric irritation after its administration. Through X-ray diffraction and Fourier-transformed infrared spectroscopy (FT-IR), we could verify the effective drug intercalation into LDH. The dissolution tests clearly demonstrate a significant improvement of the drug release rate when carprofen is in the form of hybrid compound. Copyright © 2018 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Microstructure and mechanical characteristics of gradient structured Cu and Cu alloys processed by surface mechanical attrition treatment

NASA Astrophysics Data System (ADS)

Hu, XZ; Cheng, LP; Chen, HL; Yin, Z.; Zhang, Z.; Shu, BP; Gong, YL; Zhu, XK

2017-05-01

Cu-Al-Zn alloys with different stacking fault energy (SFE) were processed by surface mechanical attrition treatment (SMAT) at cryogenic temperature (CT), mechanical properties of gradient structured Cu-Al-Zn alloys were investigated in this study. Al and Zn content in alloys, which result in the decrease of SFE, can contribute to the increase in strength. Cu-4.5wt%Al-14.3wt%Zn alloy with the lower SFE shows that the strength increased, the ductility did not decrease significantly with increasing processing time, and the strength can be improved by a thicker gradient structure (GS) layer. The better combination of strength and ductility was achieved in Cu-4.5wt%Al-14.3wt%Zn alloy with lower SFE.

Laser Brazing Characteristics of Al to Brass with Zn-Based Filler

NASA Astrophysics Data System (ADS)

Tan, Caiwang; Liu, Fuyun; Sun, Yiming; Chen, Bo; Song, Xiaoguo; Li, Liqun; Zhao, Hongyun; Feng, Jicai

2018-05-01

Laser brazing of Al to brass in lap configuration with Zn-based filler was performed in this work. The process parameters including laser power, defocused distance were found to have a significant influence on appearance, microstructure and mechanical properties. The process parameters were optimized to be laser power of 2700 W and defocusing distance of + 40 mm from brass surface. In addition, preheating exerted great influence on wetting and spreading ability of Zn filler on brass surface. The microstructure observation showed the thickness of reaction layer (CuZn phase) at the interface of the brass side would grow with the increase in laser power and the decrease in the laser defocusing distance. Moreover, preheating could increase the spreading area of the filler metal and induced the growth of the reaction layer. The highest tensile-shear load of the joint could reach 2100 N, which was 80% of that of Al alloy base metal. All the joints fractured along the CuZn reaction layer and brass interface. The fracture morphology displayed the characteristics of the cleavage fracture when without preheating before welding, while it displayed the characteristics of the quasi-cleavage fracture with preheating before welding.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Structural classification of RAO/sub 3/(MO)/sub n/ compounds (R = Sc, In, Y, or lanthanides; A = Fe(III), Ga, Cr, or Al; M = divalent cation; n = 1-11)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kimizuka, N.; Mohri, T.

A series of new compounds (RAO/sub 3/MO)/sub n/ (n = 1-11) having spinel, YbFe/sub 2/O/sub 4/, or InFeO/sub 3/(ZnO)/sub n/ types of structures were newly synthesized (R = Sc, In, Y, Lu, Yb, Tm, or Er; A = Fe(III), Ga, Cr, or Al; M = Mg, Mn, Fe(II), Co, Ni, Zn, or Cd) at elevated temperatures. The conditions of synthesis and the lattice constants for these compounds are reported. The stacking sequences of the InO/sub 1.5/, (FeZn)O/sub 2.5/, and ZnO layers for InFeO/sub 3/(ZnO)/sub 10/ and the TmO/sub 1.5/, (AlZn)O/sub 2.5/, and ZnO layers for TmAlO/sub 3/(ZnO)/sub 11/ are presented,more » respectively. The crystal structures of the (RAO/sub 3/)/sub m/(MO)/sub n/ phases R = Sc, In, Y, or lanthanide elements; A = Fe(III), Ga, Cr, or Al; M = divalent cation elements; m and n = integer are classified into four crystal structure types (K/sub 2/NiF/sub 4/, CaFe/sub 2/O/sub 4/, YbFe/sub 2/O/sub 4/, and spinel), based upon the constituent cations R, A, and M.« less

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Effect of Al doping on performance of ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

2018-03-01

In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

Investigation of transparent zinc oxide-based contacts for high performance III-nitride light emitting diodes

NASA Astrophysics Data System (ADS)

Jung, Sungpyo

In this dissertation, we investigate Al-doped ZnO(AZO) contact structure to a variety of GaN LED structures. Our results show that ZnO is a potentially viable transparent contact for GaN-based LEDs. We began our investigation by depositing AZO and Ni/AZO contacts to p-GaN. However, these contacts are highly resistive. Next, we deposited thin Ni/Au layer, oxidized the Ni/Au layer to form a good ohmic contact to p-GaN, and then followed by the deposition of thick AZO layer. However, the electrical resistance of oxidized Ni/Au-AZO contacts is higher than that of the conventional Ni/Au contacts. We solve the high contact resistance problem by using a two-step thermal annealing process. In this method, Ni/Au layer is deposited first followed by the AZO layer without any annealing step. After finishing the device fabrication, the samples are annealed in air first to achieve low contact resistance with Ni/Au/AZO and p-GaN and then annealed in nitrogen to achieve low sheet resistance for the AZO layer. The improved electrical and optical characteristics of this scheme compared to conventional Ni/Au contact scheme are demonstrated on a variety of GaN LEDs: blue, green, small area, large area and bottom emitting LEDs. The benefits of ZnO-based contacts are more significant in large area LEDs that include lower forward voltage, and higher optical emission, better emission uniformity and reliability. The advantages of ZnO-based contact in terms of lower contact resistance and higher optical emission on LED fabricated on roughened GaN wafers are also demonstrated. For bottom emitting LED structure intended for flip chip applications, our original oxidized Ni/Au layer over coated with either Al or Ag contacts have shown to simultaneously yield superior I-V characteristics and greatly enhanced optical performance compared to conventional LEDs using a thick Ni/Au contact in the flip-chip configuration. However, the contact is unstable at operating temperatures > 100°C due to close proximity of Ag and Al with p-GaN. Here, the ZnO layer probably can be interdiffusion barrier layer of Al into GaN. We have demonstrated low contact resistance and higher light emission by using ZnO as a barrier material between oxidize Ni/Au and Al reflecting layer. In summary, our investigation demonstrates the applicability of ZnO-based transparent contacts for high performance LEDs that will be larger in size and are expected to be operating at higher current for solid-state lighting of the future. (Abstract shortened by UMI.)

High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks

NASA Technical Reports Server (NTRS)

Kim, Jae H. (Inventor); Lin, Steven H. (Inventor)

1991-01-01

High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) and Darlington phototransistor pairs are provided for use in optical neural networks and other optoelectronic integrated circuit applications. The reduced base doping level used results in effective blockage of Zn out-diffusion, enabling a current gain of 500, higher than most previously reported values for Zn-diffused-base DHBTs. Darlington phototransitor pairs of this material can achieve a current gain of over 6000, which satisfies the gain requirement for optical neural network designs, which advantageously may employ neurons comprising the Darlington phototransistor pairs in series with a light source.

Role of Al in Zn bath on the formation of the inhibition layer during hot-dip galvanizing for a 1.2Si-1.5Mn transformation-induced plasticity steel

NASA Astrophysics Data System (ADS)

Wang, Kuang-Kuo; Hsu, Chiung-Wen; Chang, Liuwen; Gan, Dershin; Yang, Kuo-Cheng

2013-11-01

This study investigated the interaction between the Al in the Zn bath and the surface oxides formed by selective oxidation on a 1.2Si-1.5Mn TRIP steel during hot-dip galvanizing. XPS and TEM were employed for characterization. The results indicated that the amorphous xMnO·SiO2 oxide could react with Al to form a Si-Mn-Al-containing oxide. The crystalline MnSiO3 and Mn2SiO4 oxides could be largely reduced by Al to form holes in the oxide film. Consequently, the steel covered by a layer of mixed xMnO·SiO2 and MnSiO3 could form a continuous Fe2Al5 inhibition layer and showed the highest galvanizability among the three samples examined.

Effects of CuZnAl Particles on Properties and Microstructure of Sn-58Bi Solder

PubMed Central

Yang, Fan; Zhang, Liang; Liu, Zhi-quan; Zhong, Su Juan; Ma, Jia; Bao, Li

2017-01-01

With the purpose of improving the properties of the Sn-58Bi lead-free solder, micro-CuZnAl particles ranging from 0 to 0.4 wt % were added into the low temperature eutectic Sn-58Bi lead-free solder. After the experimental testing of micro-CuZnAl particles on the properties and microstructure of the Sn-58Bi solders, it was found that the wettability of the Sn-58Bi solders was obviously improved with addition of CuZnAl particles. When the addition of CuZnAl particles was 0.2 wt %, the wettability of the Sn-58Bi solder performed best. At the same time, excessive addition of CuZnAl particles led to poor wettability. However, the results showed that CuZnAl particles changed the melting point of the Sn-58Bi solder slightly. The microstructure of the Sn-58Bi solder was refined by adding CuZnAl particles. When the content of CuZnAl addition was between 0.1 and 0.2 wt %, the refinement was great. In addition, the interfacial IMC layer between new composite solder and Cu substrate was thinner than that between the Sn-58Bi solder and Cu substrate. PMID:28772917

Improvement of performance in low temperature solid oxide fuel cells operated on ethanol and air mixtures using Cu-ZnO-Al2O3 catalyst layer

NASA Astrophysics Data System (ADS)

Morales, M.; Espiell, F.; Segarra, M.

2015-10-01

Anode-supported single-chamber solid oxide fuel cells with and without Cu-ZnO-Al2O3 catalyst layers deposited on the anode support have been operated on ethanol and air mixtures. The cells consist of gadolinia-doped ceria electrolyte, Ni-doped ceria anode, and La0.6Sr0.4CoO3-δ-doped ceria cathode. Catalyst layers with different Cu-ZnO-Al2O3 ratios are deposited and sintered at several temperatures. Since the performance of single-chamber fuel cells strongly depends on catalytic properties of electrodes for partial oxidation of ethanol, the cells are electrochemically characterized as a function of the temperature, ethanol-air molar ratio and gas flow rate. In addition, catalytic activities of supported anode, catalytic layer-supported anode and cathode for partial oxidation of ethanol are analysed. Afterwards, the effect of composition and sintering temperature of catalyst layer on the cell performance are determined. The results indicate that the cell performance can be significantly enhanced using catalyst layers of 30:35:35 and 40:30:30 wt.% Cu-ZnO-Al2O3 sintered at 1100 °C, achieving power densities above 50 mW cm-2 under 0.45 ethanol-air ratio at temperatures as low as 450 °C. After testing for 15 h, all cells present a gradual loss of power density, without carbon deposition, which is mainly attributed to the partial re-oxidation of Ni at the anode.

Preparation and characterization of ZnS thin films by the chemical bath deposition method (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ando, Shizutoshi; Iwashita, Taisuke

2017-06-01

Nowadays, the conversion efficiency of Cu(In･Ga)Se2 (CIGS)-based solar cell already reached over 20%. CdS thin films prepared by chemical bath deposition (CBD) method are used for CIGS-based thin film solar cells as the buffer layer. Over the past several years, a considerable number of studies have been conducted on ZnS buffer layer prepared by CBD in order to improve in conversion efficiency of CIGS-based solar cells. In addition, application to CIGS-based solar cell of ZnS buffer layer is expected as an eco-friendly solar cell by cadmium-free. However, it was found that ZnS thin films prepared by CBD included ZnO or Zn(OH)2 as different phase [1]. Nakata et. al reported that the conversion efficiency of CIGS-based solar cell using ZnS buffer layer (CBD-ZnS/CIGS) reached over 18% [2]. The problem which we have to consider next is improvement in crystallinity of ZnS thin films prepared by CBD. In this work, we prepared ZnS thin films on quarts (Si02) and SnO2/glass substrates by CBD with the self-catalysis growth process in order to improve crystallinity and quality of CBD-ZnS thin films. The solution to use for CBD were prepared by mixture of 0.2M ZnI2 or ZnSO4, 0.6M (NH2)2CS and 8.0M NH3 aq. In the first, we prepared the particles of ZnS on Si02 or SnO2/glass substrates by CBD at 80° for 20 min as initial nucleus (1st step ). After that, the particles of ZnS on Si02 or SnO2/glass substrates grew up to be ZnS thin films by CBD method at 80° for 40 min again (2nd step). We found that the surface of ZnS thin films by CBD with the self-catalyst growth process was flat and smooth. Consequently, we concluded that the CBD technique with self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement of crystallinity of ZnS thin films on SnO2/glass. [1] J.Vidal et,al., Thin Solid Films 419 (2002) 118. [2] T.Nakata et.al., Jpn. J. Appl. Phys. 41(2B), L165-L167 (2002)

Experimental and theoretical investigations on magnetic behavior of (Al,Co) co-doped ZnO nanoparticles.

PubMed

Jayakumar, O D; Achary, S N; Sudakar, C; Naik, R; Salunke, H G; Rao, Rekha; Peng, X; Ahuja, R; Tyagi, A K

2010-08-01

We present the structural and magnetic properties of Zn(0.95-x)Co(0.05)Al(x)O (x = 0.0 to 0.1) nanoparticles, synthesized by a novel sol-gel route followed by pyrolysis. Powder X-ray diffraction data confirms the formation of a single phase wurtzite type ZnO structure for all the compositions. The Zn(0.95)Co(0.05)O nanoparticles show diamagnetic behavior at room temperature. However, when Al is co-doped with Co with x = 0.0 to 0.10 in Zn(0.95-x)Co(0.05)Al(x)O, a systematic increase in ferromagnetic moment is observed up to x = 0.07 at 300 K. Above x = 0.07 (e.g. for x = 0.10) a drastic decrease in ferromagnetic nature is observed which is concomitant with the segregation of poorly crystalline Al rich ZnO phase as evidenced from TEM studies. Theoretical studies using density functional calculations on Zn(0.95-x)Co(0.05)Al(x)O suggest that the partial occupancy of S2 states leads to an increased double exchange interaction favoring the ferromagnetic ground states. Such ferromagnetic interactions are favorable beyond a threshold limit. At a high level doping of Al, the exchange splitting is reduced, which suppresses the ferromagnetic ordering.

Nonlinearity, resonance, charging, and motion at the atomic scale studied with scanning tunneling microscopes

NASA Astrophysics Data System (ADS)

Tu, Xiuwen

2008-10-01

Several novel phenomena at the single-atom and single-molecule level occurring on the surfaces of single crystals were studied with home-built low temperature scanning tunneling microscopes. The results revealed intriguing properties of single atoms and single molecules, including nonlinearity, resonance, charging, and motion. First, negative differential resistance (NDR) was observed in the dI/dV spectra for single copper-phthalocyanine (CuPc) molecules adsorbed on one- and two-layer sodium bromide (NaBr), but not for single CuPc molecules adsorbed on three-layer NaBr, all grown on a NiAl(110) surface. This transition from NDR to the absence of NDR was explained as the result of competing effects in the double-barrier tunnel junction (DBTJ) and was reproduced in a calculation based on a resonant-tunneling model. Second, the nonlinearity of the STM junction due to a single manganese (Mn) atom or MnCO molecule adsorbed on a NiAl(110) surface was used to rectify microwave irradiation. The resulting rectification current was shown to be sensitive to the spin-splitting of the electronic states of the Mn atom and to the vibrations of the MnCO molecule. Next, the ordering of cesium (Cs) atoms adsorbed on a Au(111) surface and a NiAl(110) surface was imaged in real space. Because of charge transfer to the substrates, Cs adatoms were positively charged on both surfaces. Even at 12 K, Cs adatoms were able to move and adjust according to coverage. On Au(111), the Cs first layer had a quasi-hexagonal lattice and islands of the second Cs layer did not appear until the first was completed. On NiAl(110), a locally disordered Cs first layer was observed before a locally ordered layer appeared at higher coverages. The cation-pi interactions were then studied at the single molecular level. We were able to form cation-pi complexes such as Cs···DSB, Cs···DSB···Cs, Rb···DSB, and Rb···ZnEtiol controllably by manipulation with the STM tip. We could also separate these complexes controllably by voltage pulses. STM imaging and spectroscopy revealed precise information about the atomic and electronic structure of these cation-pi complexes. Finally, electron transport through single atoms and molecules in a double-barrier tunnel junction (DBTJ) was examined. Charge bistability was observed for single ZnEtioI molecules adsorbed in several different conformations on ultrathin aluminum oxide. A sudden decrease in local apparent barrier height (LABH) was observed at the onset of an adsorbate electronic orbital for single ZnEtioI molecules and Cs atoms supported by the ultrathin aluminum oxide. The resonant-tunneling model, which was proposed to explain the transition from NDR to the absence of NDR, was found useful in explaining the sudden decrease in LABH, too. NDR, bipolar tunneling, and vibronic states were also observed and discussed in the context of DBTJ.

Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

PubMed

Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

2018-03-15

Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

PubMed

Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

2016-02-17

Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices.

Synthesis of [Zn-Al-CO 3] layered double hydroxides by a coprecipitation method under steady-state conditions

NASA Astrophysics Data System (ADS)

Chang, Z.; Evans, D. G.; Duan, X.; Vial, C.; Ghanbaja, J.; Prevot, V.; de Roy, M.; Forano, C.

2005-09-01

A continuous co-precipitation method under steady-state conditions has been investigated for the preparation of nanometer-size layered double hydroxide (LDH) particles using Zn 2Al(OH) 6(CO 3) 0.5·2H 2O as a prototype. The objective was to shorten the preparation time by working without an aging step, using a short and controlled residence time in order to maintain a constant supersaturation level in the reactor and constant particle properties in the exit stream over time. The effects of varying the operating conditions on the structural and textural properties of the LDHs have been studied, including total cation concentration, solvent, residence time, pH and intercalation anion. The products have been characterized using ICP, XRD, FTIR, BET, SEM and TEM. The LDHs prepared by the continuous coprecipitation method have a poorer crystallinity and lower crystallite sizes than those synthesized by the conventional batch method. The results have shown that increasing either cation concentration or the fraction of monoethylene glycol (MEG) in MEG/H 2O mixtures up to 80% (v/v) affect salt solubility and supersaturation, which gives rise to smaller crystallites, larger surface areas and more amorphous compounds. This increase is however limited by the precipitation of zinc and aluminum hydroxides occurring around a total cation concentration of 3.0×10 -1 M in pure water and 3.0×10 -2 M in H 2O/EtOH mixtures. Crystallite size increases with residence time, suggesting a precipitation process controlled by growth. Finally, the continuous coprecipitation method under steady-state conditions has been shown to be a promising alternative to the traditional coprecipitation technique in either pure water or mixed H 2O/MEG solvents.

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Influence of Zn Interlayer on Interfacial Microstructure and Mechanical Properties of TIG Lap-Welded Mg/Al Joints

NASA Astrophysics Data System (ADS)

Gao, Qiong; Wang, Kehong

2016-03-01

This study explored 6061 Al alloy and AZ31B Mg alloy joined by TIG lap welding with Zn foils of varying thicknesses, with the additional Zn element being imported into the fusion zone to alloy the weld seam. The microstructures and chemical composition in the fusion zone near the Mg substrate were examined by SEM and EDS, and tensile shear strength tests were conducted to investigate the mechanical properties of the Al/Mg joints, as well as the fracture surfaces, and phase compositions. The results revealed that the introduction of an appropriate amount of Zn transition layer improves the microstructure of Mg/Al joints and effectively reduces the formation of Mg-Al intermetallic compounds (IMCs). The most common IMCs in the fusion zone near the Mg substrate were Mg-Zn and Mg-Al-Zn IMCs. The type and distribution of IMCs generated in the weld zone differed according to Zn additions; Zn interlayer thickness of 0.4 mm improved the sample's mechanical properties considerably compared to thicknesses of less than 0.4 mm; however, any further increase in Zn interlayer thickness of above 0.4 mm caused mechanical properties to deteriorate.

Camera flash heating of a three-layer solid composite: An approximate solution

NASA Astrophysics Data System (ADS)

Jibrin, Sani; Moksin, Mohd Maarof; Husin, Mohd Shahril; Zakaria, Azmi; Hassan, Jumiah; Talib, Zainal Abidin

2014-03-01

Camera flash heating and the subsequent thermal wave propagation in a solid composite material is studied using the Laplace transform technique. Full-field rear surface temperature for a single-layer, two-layer and three-layer solid composites are obtained directly from the Laplace transform conversion tables as opposed to the tedious inversion process by integral transform method. This is achieved by first expressing the hyperbolic-transcendental equation in terms of negative exponentials of square root of s/α and expanded same in a series by the binomial theorem. Electrophoretic deposition (EPD) and dip coating processes were used to prepare three-layer solid composites consisting ZnO/Cu/ZnO and starch/Al/starch respectively. About 0.5ml of deionized water enclosed within an air-tight aluminium container serves as the third three layer sample (AL/water/AL). Thermal diffusivity experiments were carried out on all the three samples prepared. Using Scaled Levenberg-Marquardt algorithm, the approximate temperature curve for the three-layer solid composite is fitted with the corresponding experimental result. The agreement between the theoretical curve and the experimental data as well as that between the obtained thermal diffusivity values for the ZnO, aluminium and deionized water in this work and similar ones found in literature is found to be very good.

Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance.

PubMed

Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; Kim, Chang Zoo; Choi, Won Jun; Baik, Jeong Min

2016-01-28

A series of hierarchical ZnO-based antireflection coatings with different nanostructures (nanowires and nanosheets) is prepared hydrothermally, followed by means of RF sputtering of MgF2 layers for coaxial nanostructures. Structural analysis showed that both ZnO had a highly preferred orientation along the 〈0001〉 direction with a highly crystalline MgF2 shell coated uniformly. However, a small amount of Al was present in nanosheets, originating from Al diffusion from the Al seed layer, resulting in an increase of the optical bandgap. Compared with the nanosheet-based antireflection coatings, the nanowire-based ones exhibited a significantly lower reflectance (∼2%) in ultraviolet and visible light wavelength regions. In particular, they showed perfect light absorption at wavelength less than approximately 400 nm. However, a GaAs single junction solar cell with nanosheet-based antireflection coatings showed the largest enhancement (43.9%) in power conversion efficiency. These results show that the increase of the optical bandgap of the nanosheets by the incorporation of Al atoms allows more photons enter the active region of the solar cell, improving the performance.

Enhanced bonding property of cold-sprayed Zn-Al coating on interstitial-free steel substrate with a nanostructured surface layer

NASA Astrophysics Data System (ADS)

Liang, Y. L.; Wang, Z. B.; Zhang, J.; Zhang, J. B.; Lu, K.

2016-11-01

By means of surface mechanical attrition treatment (SMAT), a gradient nanostructured surface layer was fabricated on a hot-rolled interstitial-free steel plate. A Zn-Al coating was subsequently deposited on the SMAT sample by using cold spray process. The bonding property of the coating on the SMAT substrate was compared with that on the coarse-grained (CG) sample. Stud-pull tests showed that the bonding strength in the as-sprayed SMAT sample is ∼30% higher than that in the as-sprayed CG sample. No further improvement in bonding strength was achieved in the coated SMAT sample after annealing at 400 °C, mostly due to the formation of cracks and intermetallic compounds at the coating/substrate interface in an earlier stage (<30 min) and in a final stage (>90 min), respectively. The enhanced bonding property of the Zn-Al coating on the SMAT sample might be related with the promoted atomic diffusion and hardness in the nanostructured surface layer.

Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer.

PubMed

Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

2009-05-13

The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

Effect of carbon entrapped in Co-Al double oxides on structural restacking and electrochemical performances

NASA Astrophysics Data System (ADS)

Su, Ling-Hao; Zhang, Xiao-Gang

Co-Al layered double hydroxides (LDH) were synthesized from nitrates and sodium benzoate by direct coprecipitation, and heated at 600 °C for 3 h in argon gas flow to obtain Co-Al double oxides. The effect of carbon, created during the pyrolysis of benzoate and inserted in resulting double oxides, on structural reconstruction was investigated by X-ray diffraction, scanning electron microscope, Raman spectroscopy, and infrared spectroscopy techniques. It is horizontal arrangement rather than vertical dilayer orientation in the interlayer spacing that was adopted by benzoate. An abnormal phenomenon was found that when immersed in aqueous 6 M KOH solution in air, the double oxides restacked to Co-Al layered double hydroxides with more regular crystal than before. The reason is believed that carbon was confined in the matrix of resulting double oxides, which prevented further collapse of the layered structure. Cyclic voltammetries (CV) and constant current charge/discharge measurements reveal that the restacked Co-Al layered double hydroxide has good long-life capacitive performance with a capacitance up to 145 F g -1 even at a large current of 2 A g -1. In addition, two clear slopes in chronoampermetric test demonstrated two different diffusion coefficients, explaining the slope of about 118.4 mV in the plot of formal potential E f versus pOH.

Structure of oxides prepared by decomposition of layered double Mg–Al and Ni–Al hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherepanova, Svetlana V.; Novosibirsk State University, Novosibirsk; Leont’eva, Natalya N., E-mail: n_n_leonteva@list.ru

2015-05-15

Abstracts: Thermal decomposition of Mg–Al and Ni–Al layered double hydroxides LDH at temperatures lower than 800 °C leads to the formation of oxides with different structures. Mg–Al oxide has a very defective structure and consists of octahedral layers as in periclase MgO and mixed octahedral–tetrahedral layers as in spinel MgAl{sub 2}O{sub 4}. Mixed Ni–Al oxide has a sandwich-like structure, consisting of a core with Al-doped NiO-like structure and some surface layers with spinel NiAl{sub 2}O{sub 4} structure epitaxial connected with the core. Suggested models were verified by simulation of X-ray diffraction patterns using DIFFaX code, as well as HRTEM, IR-,more » UV-spectroscopies, and XPS. - Graphical abstract: In the Mg–Al layered double hydroxide Al{sup 3+} ions migrate into interlayers during decomposition. The Mg–Al oxide represents sequence of octahedral and octahedral–tetrahedral spinel layers with vacancies. The Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers as a result of migration of Al{sup 3+} ions on the surface. The models explain the presence and absence of “memory effect” for the Mg–Al and Ni–Al oxides, respectively. - Highlights: • We study products of Mg(Ni)–Al LDH decomposition by calcination at 500(400)–800 °C. • In Mg–Al/Ni–Al LDH Al ions migrate into interlayers/on the surface during decomposition. • Mg–Al oxide represents sequence of periclase- and spinel-like layers with vacancies. • Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers. • The models explain the presence/absence of “memory effect” for Mg–Al/Ni–Al oxides.« less

Defect structure of epitaxial layers of III nitrides as determined by analyzing the shape of X-ray diffraction peaks

NASA Astrophysics Data System (ADS)

Kyutt, R. T.

2017-04-01

The shape of X-ray diffraction epitaxial layers with high dislocation densities has been studied experimentally. Measurements with an X-ray diffractometer were performed in double- and triple-crystal setups with both Cu K α and Mo K α radiation. Epitaxial layers (GaN, AlN, AlGaN, ZnO, etc.) with different degrees of structural perfection grown by various methods on sapphire, silicon, and silicon carbide substrates have been examined. The layer thickness varied in the range of 0.5-30 μm. It has been found that the center part of peaks is well approximated by the Voigt function with different Lorentz fractions, while the wing intensity drops faster and may be represented by a power function (with the index that varies from one structure to another). A well-marked dependence on the ordering of dislocations was observed. The drop in intensity in the majority of structures with a regular system and regular threading dislocations was close to the theoretically predicted law Δθ-3; the intensity in films with a chaotic distribution decreased much faster. The dependence of the peak shape on the order of reflection, the diffraction geometry, and the epitaxial layer thickness was also examined.

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Removal of metallic Al and Al/Zn alloys in MSWI bottom ash by alkaline treatment.

PubMed

Xuan, Dongxing; Poon, Chi Sun

2018-02-15

In order to reduce the leaching of pollutants and remove the Al and Zn/Al alloy from municipal solid waste incineration bottom ash (MSWIBA), an optimized alkaline pre-treatment procedure was developed in this study. The influences of alkaline conditions on the removal rate of Al and Zn/Al alloy were investigated, including [OH] - concentration, temperature, particle size, liquid/solid ratio and treatment duration. The experimental results showed that the optimized alkaline pre-treatment conditions to efficiently remove the Al and Zn/Al alloy was by using a minimum of 1.0mol/l [OH] - , at 55°C and with a minimal liquid/solid ratio of 5. The removal rate of Al and Zn/Al alloy followed an S-shape curve, in which the slow beginning stage was attributed to the protection of the oxidation layer and the quenched product around the Al and Al/Zn alloy. After 3h of the optimized alkaline pre-treatment, the leaching of Cr, Cu, Pb and Zn of the treated MSWIBA was reduced by more than 90% of that of the original MSWIBA. The alkali-silica reaction test further indicated that the expansion of concrete prepared with the pre-treated MSWIBA was significantly reduced and there was no macro-crack or spalling damage on the surface of the tested specimens. Copyright © 2017 Elsevier B.V. All rights reserved.

Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

NASA Astrophysics Data System (ADS)

Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

2009-08-01

Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

Synthesis of protocatechuic acid–zinc/aluminium–layered double hydroxide nanocomposite as an anticancer nanodelivery system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barahuie, Farahnaz; Hussein, Mohd Zobir, E-mail: mzobir@upm.edu.my; Gani, Shafinaz Abd

2015-01-15

Protocatechuic acid, an active anticancer agent, has been intercalated into Zn/Al–layered double hydroxide at Zn/Al=2) using two different preparation methods, co-precipitation and ion-exchange, which are labelled as PZAE and PZAC, respectively. The release of protocatechuate from the nanocomposites occurred in a controlled manner and was fitted satisfactorily to pseudo-second order kinetics. The basal spacing of the resulting nanocomposites PZAE and PZAC was 10.2 and 11.0 Å, respectively, indicating successful intercalation of protocatechuate anions into the interlayer galleries of Zn/Al–NO{sub 3}–LDH in a monolayer arrangement with angles of 24 and 33° from the z-axis in PZAE and PZAC, respectively. The formationmore » of nanocomposites was further confirmed by a Fourier transform infrared study. Thermogravimetric and differential thermogravimetric analyses indicated that the thermal stability of the intercalated protocatechuic acid was significantly enhanced compared to its free protocatechuic acid, and the drug content in the nanocomposites was estimated to be approximately 32.6% in PZAE and 29.2% in PZAC. Both PZAE and PZAC nanocomposites inhibit the growth of human cervical, liver and colorectal cancer cell lines and exhibit no toxic effects towards normal fibroblast 3T3 cell after 72 h of treatment. - Graphical abstract: Protocatechuate anions were arranged in monolayer mode with the angle of 24° for PZAE and 33° for PZAC from Z axis to maximize interaction between carboxylate groups and brucite-like layers. - Highlights: • Two methods gave nanocomposites with slightly different physico-chemical properties. • PZAE and PZAC have the potential to be used as a controlled release formulation. • The thermal stability of PA is markedly enhanced upon the intercalation process. • Higher cancer cell growth inhibition for PZAE and PZAC nanocomposites than for PA.« less

ZnS-Sb2S3@C Core-Double Shell Polyhedron Structure Derived from Metal-Organic Framework as Anodes for High Performance Sodium Ion Batteries.

PubMed

Dong, Shihua; Li, Caixia; Ge, Xiaoli; Li, Zhaoqiang; Miao, Xianguang; Yin, Longwei

2017-06-27

Taking advantage of zeolitic imidazolate framework (ZIF-8), ZnS-Sb 2 S 3 @C core-double shell polyhedron structure is synthesized through a sulfurization reaction between Zn 2+ dissociated from ZIF-8 and S 2- from thioacetamide (TAA), and subsequently a metal cation exchange process between Zn 2+ and Sb 3+ , in which carbon layer is introduced from polymeric resorcinol-formaldehyde to prevent the collapse of the polyhedron. The polyhedron composite with a ZnS inner-core and Sb 2 S 3 /C double-shell as anode for sodium ion batteries (SIBs) shows us a significantly improved electrochemical performance with stable cycle stability, high Coulombic efficiency and specific capacity. Peculiarly, introducing a carbon shell not only acts as an important protective layer to form a rigid construction and accommodate the volume changes, but also improves the electronic conductivity to optimize the stable cycle performance and the excellent rate property. The architecture composed of ZnS inner core and a complex Sb 2 S 3 /C shell not only facilitates the facile electrolyte infiltration to reduce the Na-ion diffusion length to improve the electrochemical reaction kinetics, but also prevents the structure pulverization caused by Na-ion insertion/extraction. This approach to prepare metal sulfides based on MOFs can be further extended to design other nanostructured systems for high performance energy storage devices.

Highly Repeatable and Recoverable Phototransistors Based on Multifunctional Channels of Photoactive CdS, Fast Charge Transporting ZnO, and Chemically Durable Al2O3 Layers.

PubMed

Ahn, Cheol Hyoun; Kang, Won Jun; Kim, Ye Kyun; Yun, Myeong Gu; Cho, Hyung Koun

2016-06-22

Highly repeatable and recoverable phototransistors were explored using a "multifunctional channels" structure with multistacked chalcogenide and oxide semiconductors. These devices were made of (i) photoactive CdS (with a visible band gap), (ii) fast charge transporting ZnO (with a high field-effect mobility), and (iii) a protection layer of Al2O3 (with high chemical durability). The CdS TFT without the Al2O3 protection layer did not show a transfer curve due to the chemical damage that occurred on the ZnO layer during the chemical bath deposition (CBD) process used for CdS deposition. Alternatively, compared to CdS phototransistors with long recovery time and high hysteresis (ΔVth = 19.5 V), our "multi-functional channels" phototransistors showed an extremely low hysteresis loop (ΔVth = 0.5V) and superior photosensitivity with repeatable high photoresponsivity (52.9 A/W at 400 nm). These improvements are likely caused by the physical isolation of the sensing region and charge transport region by the insertion of the ultrathin Al2O3 layer. This approach successfully addresses some of the existing problems in CdS phototransistors, such as the high gate-interface trap site density and high absorption of molecular oxygen, which originate from the polycrystalline CdS.

Fabrication and characterization of nano-gas sensor arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hassan, H. S., E-mail: hassan.shokry@gmail.com; Kashyout, A. B., E-mail: hady8@yahoo.com; Morsi, I., E-mail: drimanmorsi@yahoo.com

2015-03-30

A novel structures of Nanomaterials gas sensors array constructed using ZnO, and ZnO doped with Al via sol-gel technique. Two structure arrays are developed; the first one is a double sensor array based on doping with percentages of 1% and 5%. The second is a quadrature sensor array based on several doping ratios concentrations (0%, 1%, 5% and 10%). The morphological structures of prepared ZnO were revealed using scanning electron microscope (SEM). X-ray diffraction (XRD) patterns reveal a highly crystallized wurtzite structure and used for identifying phase structure and chemical state of both ZnO and ZnO doped with Al undermore » different preparation conditions and different doping ratios. Chemical composition of Al-doped ZnO nanopowders was performed using energy dispersive x-ray (EDS) analysis. The electrical characteristics of the sensor are determined by measuring the two terminal sensor’s output resistance for O{sub 2}, H{sub 2} and CO{sub 2} gases as a function of temperature.« less

Quality improvements of ZnxCdyMg1-x-ySe layers grown on InP substrates by a thin ZnCdSe interfacial layer

NASA Astrophysics Data System (ADS)

Zeng, L.; Yang, B. X.; Tamargo, M. C.; Snoeks, E.; Zhao, L.

1998-03-01

The quality of lattice-matched ZnxCdyMg1-x-ySe epitaxial layers grown on (001) InP substrates with a III-V buffer layer has been improved by initially growing a ZnCdSe interfacial layer (50 Å) at low temperature. The widths of double crystal x-ray rocking curves for ZnxCdyMg1-x-ySe epilayers with band gaps as high as 3.05 eV were reduced to about 70 arcsec. The defect density evaluated from etch pit density and plan-view transmission electron microscopy measurements was reduced by two orders of magnitude, to 106-107cm-2. The photoluminescence band edge emission became more symmetric and slightly narrower. It is proposed that an initial two-dimensional growth mode has been achieved by incorporating such a lattice-matched ZnCdSe layer.

The optimization of Ga (1-x)Al (x)As-GaAs solar cells for air mass zero operation and a study of Ga (1-x)Al (x)As-GaAs solar cells at high temperatures, phase 1

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Woodall, J. M.

1976-01-01

The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn doped pGaAs region, and a Zn doped Ga(1-x)Al(x)As layer, (2) one consisting of an nGaAs substrate, a Ge doped pGaAs region, and a pGa(1-x)Al(x)As upper layer, and (3) one consisting of an n+GaAs substrate, an nGa(1-x)Al(X)As region, a pGa(1-x)Bl(X) As region, and a pGa(1-y)Al(y)As upper layer. In all three cases, the upper alloy layer is thin and of high Al composition in order to obtain high spectral response over the widest possible range of photon energies. Spectral response, capacitance-voltage, current-voltage, diffusion length, sunlight (or the equivalent)-efficiency, and efficiency-temperature measurements were made as a function of device parameters in order to analyze and optimize the solar cell behavior.

SrZnO nanostructures grown on templated <0001> Al2O3 substrates by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Labis, Joselito P.; Alanazi, Anwar Q.; Albrithen, Hamad A.; El-Toni, Ahmed Mohamed; Hezam, Mahmoud; Elafifi, Hussein Elsayed; Abaza, Osama M.

2017-09-01

The parameters of pulsed laser deposition (PLD) have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO). In this work, SrZnO nanostructures are grown on <0001>Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ˜300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL), while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002) preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

Synthesis Al complex and investigating effect of doped ZnO nanoparticles in the electrical and optical efficiency of OLEDS

NASA Astrophysics Data System (ADS)

Shahedi, Zahra; Jafari, Mohammad Reza

2017-01-01

In this study, an organometallic complex based on aluminum ions is synthesized. And it is utilized as fluorescent material in the organic light-emitting diodes (OLEDs). The synthesized complex was characterized using XRD, UV-Vis, FT-IR as well as PL spectroscopy analyses. The energy levels of Al complex were determined by cyclic voltammetry measurements. Then, the effects of ZnO nanoparticles (NPs) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, on the electrical and optical performance of the organic light-emitting diodes have been investigated. For this purpose, two samples containing ITO/PEDOT:PSS/PVK/Alq3/PBD/Al with two different concentration and two samples containing ITO/PEDOT:PSS:ZnO/PVK/Alq3/PBD/Al with two different concentration were prepared. Then, hole transport, electron transport and emissive layers were deposited by the spin coating method and the cathode layer (Al) was deposited by the thermal evaporation method. The OLED simulation was also done by constructing the model and choosing appropriate parameters. Then, the experimental data were collected and the results interpreted both qualitatively and quantitatively. The results of the simulations were compared with experimental data of the J-V spectra. Comparing experimental data and simulation results showed that the electrical and optical efficiency of the samples with ZnO NPs is appreciably higher than the samples without ZnO NPs.

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

PubMed

Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

2016-12-01

Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

PubMed

Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

2017-03-29

We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

Effects of Substrate and Post-Growth Treatments on the Microstructure and Properties of ZnO Thin Films Prepared by Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Haseman, Micah; Saadatkia, P.; Winarski, D. J.; Selim, F. A.; Leedy, K. D.; Tetlak, S.; Look, D. C.; Anwand, W.; Wagner, A.

2016-12-01

Aluminum-doped zinc oxide (ZnO:Al) thin films were synthesized by atomic layer deposition on silicon, quartz and sapphire substrates and characterized by x-ray diffraction (XRD), high-resolution scanning electron microscopy, optical spectroscopy, conductivity mapping, Hall effect measurements and positron annihilation spectroscopy. XRD showed that the as-grown films are of single-phase ZnO wurtzite structure and do not contain any secondary or impurity phases. The type of substrate was found to affect the orientation and degree of crystallinity of the films but had no effect on the defect structure or the transport properties of the films. High conductivity of 10-3 Ω cm, electron mobility of 20 cm2/Vs and carrier density of 1020 cm-3 were measured in most films. Thermal treatments in various atmospheres induced a large effect on the thickness, structure and electrical properties of the films. Annealing in a Zn and nitrogen environment at 400°C for 1 h led to a 16% increase in the thickness of the film; this indicates that Zn extracts oxygen atoms from the matrix and forms new layers of ZnO. On the other hand, annealing in a hydrogen atmosphere led to the emergence of an Al2O3 peak in the XRD pattern, which implies that hydrogen and Al atoms compete to occupy Zn sites in the ZnO lattice. Only ambient air annealing had an effect on film defect density and electrical properties, generating reductions in conductivity and electron mobility. Depth-resolved measurements of positron annihilation spectroscopy revealed short positron diffusion lengths and high concentrations of defects in all as-grown films. However, these defects did not diminish the electrical conductivity in the films.

Delamination-restacking behaviour of surfactant intercalated layered hydroxy double salts, M 3Zn 2(OH) 8(surf) 2ṡ2H 2O [M = Ni, Co and surf = dodecyl sulphate (DS), dodecyl benzene sulphonate (DBS)

NASA Astrophysics Data System (ADS)

Rajamathi, Jacqueline T.; Ravishankar, N.; Rajamathi, Michael

2005-02-01

Surfactant anion intercalated nickel-zinc and cobalt-zinc layered hydroxy double salts were prepared through a modified acetate hydrolysis route. These organo-inorganic hybrids delaminate readily in alcohols such as 1-butanol to give stable translucent colloids. The extent of delamination and the stability of the colloids obtained are comparable to what has been observed in the case of layered double hydroxides (LDHs). The original layered solid could be obtained either by evaporation of the colloid or precipitation by the addition of a polar solvent such as acetone.

Gadolinium-Doped Gallic Acid-Zinc/Aluminium-Layered Double Hydroxide/Gold Theranostic Nanoparticles for a Bimodal Magnetic Resonance Imaging and Drug Delivery System.

PubMed

Sani Usman, Muhammad; Hussein, Mohd Zobir; Fakurazi, Sharida; Masarudin, Mas Jaffri; Ahmad Saad, Fathinul Fikri

2017-08-31

We have developed gadolinium-based theranostic nanoparticles for co-delivery of drug and magnetic resonance imaging (MRI) contrast agent using Zn/Al-layered double hydroxide as the nanocarrier platform, a naturally occurring phenolic compound, gallic acid (GA) as therapeutic agent, and Gd(NO₃)₃ as diagnostic agent. Gold nanoparticles (AuNPs) were grown on the system to support the contrast for MRI imaging. The nanoparticles were characterized using techniques such as Hi-TEM, XRD, ICP-ES. Kinetic release study of the GA from the nanoparticles showed about 70% of GA was released over a period of 72 h. The in vitro cell viability test for the nanoparticles showed relatively low toxicity to human cell lines (3T3) and improved toxicity on cancerous cell lines (HepG2). A preliminary contrast property test of the nanoparticles, tested on a 3 Tesla MRI machine at various concentrations of GAGZAu and water (as a reference) indicates that the nanoparticles have a promising dual diagnostic and therapeutic features to further develop a better future for clinical remedy for cancer treatment.

Acid Green 1 removal from wastewater by layered double hydroxides

NASA Astrophysics Data System (ADS)

Elkhattabi, El Hassan; Lakraimi, Mohamed; Berraho, Moha; Legrouri, Ahmed; Hammal, Radouan; El Gaini, Layla

2018-03-01

The paper presents the removal of Acid Green 1 (AG1) from aqueous solutions by [Zn-Al-Cl]-layered double hydroxides (LDHs). The LDH was prepared by coprecipitation at constant pH. The affinity of this material for AG1 was studied as a function of contact time, pH of the solution, LDH dose and AG1/LDH mass ratio. It was found that 32 h are enough to reach the equilibrium with a maximum retention at pH 8 for an LDH dose of 100 mg and with an AG1/LDH mass ratio higher than 2. The adsorption isotherm is of L-type, as described by the Langmuir model. The results demonstrate that AG1 retention on LDHs occurs by adsorption on external surface when AG1/LDH mass ratio is equal or lower than 2 and by both adsorption and interlayer ion exchange for ratios higher than 2. A mechanism for the AG1 removal has been confirmed by X-ray diffraction, Fourier transform infrared spectroscopy, thermogravimetric-differential thermal analyses and scanning electron microscopy.

Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering.

PubMed

Bang, Joon-Ho; Park, Hee-Woo; Cho, Sang-Hyun; Song, Pung-Keun

2012-04-01

Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.

Significantly enhanced UV luminescence by plasmonic metal on ZnO nanorods patterned by screen-printing.

PubMed

Zhao, Jun; Cui, Shuyuan; Zhang, Xingang; Li, Wenqing

2018-08-31

A smart synthetic method is conceived to construct large batches of ZnO nanostructures to meet market demand for light-emitting diodes. Utilizing the localized surface plasmon resonance of metal nanoparticles (NPs) facilitates the recombination of electron-hole pairs and the release of photons. Compared to raw ZnO nanorods (NRs), ZnO NRs@HfO 2 @Al NPs show a ∼120× enhancement in ultraviolet (UV) photoluminescence (PL), while ZnO NRs@HfO 2 @Ag NPs show a six-fold enhancement. Because the surface plasmon energy of Al is nearer the ZnO band gap, the PL enhancement of ZnO NRs covered with Al is stronger than that of those covered with Ag. Based on this analysis, three-dimensional graphical ZnO NR arrays were manufactured by screen-printing, a mass production technique. After covering the arrays with layers of HfO 2 and Al NPs, the UV PL intensities of the corresponding substrates were increased by approximately 16×. This indicates the potential to mass-produce highly efficient optoelectronic devices.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

NASA Astrophysics Data System (ADS)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovacs, Andras; Ney, A.; Duchamp, Martial

2013-12-23

We have studied planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al2O3) and the Co:ZnO/Al2O3 interface structure at atomic resolution using aberration-corrected transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). Comparing Co:ZnO samples deposited by pulsed laser deposition and reactive magnetron sputtering, both exhibit extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3-4 Co:ZnO layers at the interface.. In addition, we have measured the local strain which reveals the lattice distortion around the stacking faults.

Sol-Gel Deposited Double Layer TiO₂ and Al₂O₃ Anti-Reflection Coating for Silicon Solar Cell.

PubMed

Jung, Jinsu; Jannat, Azmira; Akhtar, M Shaheer; Yang, O-Bong

2018-02-01

In this work, the deposition of double layer ARC on p-type Si solar cells was carried out by simple spin coating using sol-gel derived Al2O3 and TiO2 precursors for the fabrication of crystalline Si solar cells. The first ARC layer was created by freshly prepared sol-gel derived Al2O3 precursor using spin coating technique and then second ARC layer of TiO2 was deposited with sol-gel derived TiO2 precursor, which was finally annealed at 400 °C. The double layer Al2O3/TiO2 ARC on Si wafer exhibited the low average reflectance of 4.74% in the wavelength range of 400 and 1000 nm. The fabricated solar cells based on double TiO2/Al2O3 ARC attained the conversion efficiency of ~13.95% with short circuit current (JSC) of 35.27 mA/cm2, open circuit voltage (VOC) of 593.35 mV and fill factor (FF) of 66.67%. Moreover, the fabricated solar cells presented relatively low series resistance (Rs) as compared to single layer ARCs, resulting in the high VOC and FF.

ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application

NASA Astrophysics Data System (ADS)

Hong, S. K.; Chen, Y.; Ko, H. J.; Wenisch, H.; Hanada, T.; Yao, T.

2001-06-01

This paper will address features of plasma-assisted molecular beam epitaxial growth of ZnO and related materials and their characteristics. Two-dimensional, layer-by-layer growth is achieved both on c-plane sampphire by employing MgO buffer layer growth and on (0001) GaN/Al2O3 template by predepositing a low-temperature buffer layer followed by high-temperature annealing. Such two-dimensional growth results in the growth of high-quality heteroepitaxial ZnO epilayers. Biexciton emission is obtained from such high quality epilayers The polarity of heteroepitaxial ZnO epilayers is controlled by engineering the heterointerfaces. We achieved selective growth of Zn-polar and O-polar ZnO heteroepitaxial layers. The origin of different polarities can be successfully explained by an interface bonding sequence model. N-type conductivity in Gadoped ZnO epilayers is successfully controlled. High conductivity, enough to be applicable to devices, is achieved. MgxZn1-xO/ZnO heterostructures are grown and emission from a ZnO quantum well is observed. Mg incorporation in a MgZnO alloy is determined by in-situ reflection high-energy electron diffraction intensity oscillations, which enables precise control of the composition. Homoepitaxy on commericial ZnO substrates has been examined. Reflection high-energy electron diffraction intensity oscillations during homoepitaxy growth are observed.

Fabrication of n-ZnO:Al/p-Si(100) heterojunction diode and its characterization

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Dharmaprakash, S. M.; Byrappa, K.

2018-04-01

Aluminum doped ZnO (n-ZnO:Al) nanostructured thin films were grown on ZnO seed layer coated p-Si(100) substrate employing hydrothermal technique. X-ray diffraction pattern revealed that the ZnO:Al film possess hexagonal wurtzite structure with preferential orientation along (002) direction. Photoluminescence of the sample displayed near band edge emission peak in the ultra-violet region and defect level emission peak in the visible region. The as grown thin film was used in the fabrication of n-ZnO:Al/p-Si heterojunction diode and the room temperature current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied. The heterojunction exhibited fairly good rectification with an ideality of 2.49 and reverse saturation current of 2 nA. The barrier height was found to be 0.668 eV from the I-V measurements. The C-V measurements showed a decrease in the capacitance of the heterojunction with an increase in the reverse bias voltage.

I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

DOEpatents

Chen, Wen S.; Stewart, John M.

1992-01-07

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

Polymer Solar Cells with 90% External Quantum Efficiency Featuring an Ideal Light- and Charge-Manipulation Layer.

PubMed

Chen, Jing-De; Li, Yan-Qing; Zhu, Jingshuai; Zhang, Qianqian; Xu, Rui-Peng; Li, Chi; Zhang, Yue-Xing; Huang, Jing-Sheng; Zhan, Xiaowei; You, Wei; Tang, Jian-Xin

2018-03-01

Rapid progress in the power conversion efficiency (PCE) of polymer solar cells (PSEs) is beneficial from the factors that match the irradiated solar spectrum, maximize incident light absorption, and reduce photogenerated charge recombination. To optimize the device efficiency, a nanopatterned ZnO:Al 2 O 3 composite film is presented as an efficient light- and charge-manipulation layer (LCML). The Al 2 O 3 shells on the ZnO nanoparticles offer the passivation effect that allows optimal electron collection by suppressing charge-recombination loss. Both the increased refractive index and the patterned deterministic aperiodic nanostructure in the ZnO:Al 2 O 3 LCML cause broadband light harvesting. Highly efficient single-junction PSCs for different binary blends are obtained with a peak external quantum efficiency of up to 90%, showing certified PCEs of 9.69% and 13.03% for a fullerene blend of PTB7:PC 71 BM and a nonfullerene blend, FTAZ:IDIC, respectively. Because of the substantial increase in efficiency, this method unlocks the full potential of the ZnO:Al 2 O 3 LCML toward future photovoltaic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation between water absorption and mechanical properties of polyamide 6 filled with layered double hydroxides (LDH)

NASA Astrophysics Data System (ADS)

Botan, R.; Pinheiro, I. F.; Ferreira, F. V.; Lona, L. M. F.

2018-06-01

Polyamide 6 (PA6)/layered double hydroxide (LDH) nanocomposites were prepared by in situ polymerization with different amount (1, 2, 3 wt%) and type (Zn/Cr-L and Zn/Cr-P) of LDHs. The thermal and mechanical properties and water absorption capacity of PA6/LDH nanocomposites were investigated and have shown that the addition of LDHs increases the crystallinity of the polymer and improves their mechanical properties, while decreases the water absorption capacity due to a barrier effect of LDHs. A correlation between mechanical properties and water absorption capacity was observed and discussed. This study provides new strategies for tuning PA6-based nanocomposite properties, leading a progress in the development on the advanced polymer materials.

Manganese containing layer for magnetic recording media

DOEpatents

Lambeth, David N.; Lee, Li-Lien; Laughlin, David E.

1999-01-01

The present invention provides for a magnetic recording media incorporating Mn-containing layers between a substrate and a magnetic layer to provide media having increased coercivity and lower noise. The Mn-containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, and Mn-containing layer, preferably comprised of VMn, TiMn, MnZn, CrMnMo, CrMnW, CrMnV, and CrMnTi, and most preferably a CrMn alloy, disposed between the substrate and the magnetic layer to promote an epitaxial crystalline structure in the magnetic layer. The medium can further include seed layers, preferably polycrystalline MgO for longitudinal media, underlayers, and intermediate layers. Underlayers and intermediate layers are comprised of materials having either an A2 structure or a B2-ordered crystalline structure disposed between the seed layer and the magnetic layer. Materials having an A2 structure are preferably Cr or Cr alloys, such as CrV, CrMo, CrW and CrTi. Materials having a B2-ordered structure having a lattice constant that is substantially comparable to that of Cr, such as those preferably selected from the group consisting of NiAl, AILCo, FeAl, FeTi, CoFe, CoTi, CoHf, CoZr, NiTi, CuBe, CuZn, A-LMn, AlRe, AgMg, and Al.sub.2 FeMn.sub.2, and is most preferably FeAl or NiAl.

Tuning the field distribution and fabrication of an Al@ZnO core-shell nanostructure for a SPR-based fiber optic phenyl hydrazine sensor.

PubMed

Tabassum, Rana; Kaur, Parvinder; Gupta, Banshi D

2016-05-27

We report the fabrication and characterization of a surface plasmon resonance (SPR)-based fiber optic sensor that uses coatings of silver and aluminum (Al)-zinc oxide (ZnO) core-shell nanostructure (Al@ZnO) for the detection of phenyl hydrazine (Ph-Hyd). To optimize the volume fraction (f) of Al in ZnO and the thickness of the core-shell nanostructure layer (d), the electric field intensity along the normal to the multilayer system is simulated using the two-dimensional multilayer matrix method. The Al@ZnO core-shell nanostructure is prepared using the laser ablation technique. Various probes are fabricated with different values of f and an optimized thickness of core-shell nanostructure for the characterization of the Ph-Hyd sensor. The performance of the Ph-Hyd sensor is evaluated in terms of sensitivity. It is found that the Ag/Al@ZnO nanostructure core-shell-coated SPR probe with f = 0.25 and d = 0.040 μm possesses the maximum sensitivity towards Ph-Hyd. These results are in agreement with the simulated ones obtained using electric field intensity. In addition, the performance of the proposed probe is compared with that of probes coated with (i) Al@ZnO nanocomposite, (ii) Al nanoparticles and (iii) ZnO nanoparticles. It is found that the probe coated with an Al@ZnO core-shell nanostructure shows the largest resonance wavelength shift. The detailed mechanism of the sensing (involving chemical reactions) is presented. The sensor also manifests optimum performance at pH 7.

Biodiesel synthesis using calcined layered double hydroxide catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schumaker, J. Link; Crofcheck, Czarena; TAckett, S. Adam

2008-01-01

The catalytic properties of calcined Li-Al, Mg-Al and Mg-Fe layered double hydroxides (LDHs) were examined in two transesterification reactions, namely, the reaction of glyceryl tributyrate with methanol, and the reaction of soybean oil with methanol. While the Li-Al catalysts showed high activity in these reactions at the reflux temperature of methanol, the Mg-Fe and Mg-Al catalysts exhibited much lower methyl ester yields. CO2 TPD measurements revealed the presence of sites of weak, medium and strong basicity on both Mg-Al and Li-Al catalysts, the latter showing higher concentrations of medium and strong base sites; by implication, these are the main sitesmore » active in transesterification catalyzed by calcined Li-Al LDHs. Maximum activity was observed for the Li-Al catalysts when a calcination temperature of 450-500 aC was applied, corresponding to decomposition of the layered double hydroxide to the mixed oxide without formation of crystalline lithium aluminate phases.« less

Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film

NASA Astrophysics Data System (ADS)

Yamauchi, Hiroshi; Iizuka, Masaaki; Kudo, Kazuhiro

2007-04-01

Organic light-emitting diodes (OLEDs) combined with thin film transistor (TFT) are well suitable elements for low-cost, large-area active matrix displays. On the other hand, zinc oxide (ZnO) is a transparent material and its electrical conductivity is controlled from conductive to insulating by growth conditions. The drain current of ZnO FET is 180 μA. The OLED uses ZnO thin film (Al-doped) for the electron injection layer and is controlled by radio frequency (rf) and direct current (dc) sputtering conditions, such as Al concentration and gas pressure. Al concentration in the ZnO film and deposition rate have strong effects on electron injection. Furthermore, the OLED driven by ZnO FET shows a luminance of 13 cd/m2, a luminance efficiency of 0.7 cd/A, and an on-off ratio of 650.

Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

PubMed

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-03-01

Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

PubMed Central

Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

2015-01-01

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

Preparation and characterization of nanorod-like TiO2 and ZnO films used for charge-transport buffer layers in P3HT based organic solar cells

NASA Astrophysics Data System (ADS)

Thao, Tran Thi; Long, Dang Dinh; Truong, Vo-Van; Dinh, Nguyen Nang

2016-08-01

With the aim of findingout the appropriate buffer layers for organic solar cells (OSC), TiO2 and ZnO on ITO/glass were prepared as nanorod-like thin films. The TiO2 films were crystallyzed in the anatase phase and the ZnO films, in the wurtzite structure. The nanorods in both the fims have a similar size of 15 to 20 nm in diameter and 30 to 50 nm in length. The nanorods have an orientation nearly perpendicular to the ITO-substrate surface. From UV-Vis data the bandgap of the TiO2 and ZnO films were determined tobe 3.26 eV and 3.42 eV, respectively. The laminar organic solar cells with added TiO2 and ZnO, namely ITO/TiO2/P3HT:PCBM/LiF/Al (TBD) and ITO/ZnO/P3HT:PCBM/LiF/Al (ZBD)were made for characterization of the energy conversion performance. As a result, comparing to TiO2,the nanorod-likeZnO filmwas found to be a much better buffer layer that made the fill factor improve from a value of 0.60 for TBD to 0.82 for ZBD, and consequently thePCE was enhanced from 0.84 for TBD to 1.17% for ZBD.

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

NASA Technical Reports Server (NTRS)

Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

1988-01-01

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

NASA Astrophysics Data System (ADS)

Li, Jin; Bi, Xiaofang

2016-07-01

Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

Control Al/Mg intermetallic compound formation during ultrasonic-assisted soldering Mg to Al.

PubMed

Xu, Zhiwu; Li, Zhengwei; Li, Jiaqi; Ma, Zhipeng; Yan, Jiuchun

2018-09-01

To prevent the formation of Al/Mg intermetallic compounds (IMCs) of Al 3 Mg 2 and Al 12 Mg 17 , dissimilar Al/Mg were ultrasonic-assisted soldered using Sn-based filler metals. A new IMC of Mg 2 Sn formed in the soldered joints during this process and it was prone to crack at large thickness. The thickness of Mg 2 Sn was reduced to 22 μm at 285 °C when using Sn-3Cu as the filler metal. Cracks were still observed inside the blocky Mg 2 Sn. The thickness of Mg 2 Sn was significantly reduced when using Sn-9Zn as the filler metal. A 17 μm Mg 2 Sn layer without crack was obtained at a temperature of 200 °C, ultrasonic power of Mode I, and ultrasonic time of 2 s. The shear strengths of the joints using Sn-9Zn was much higher than those using Sn-3Cu because of the thinner Mg 2 Sn layer in the former joints. Sn whiskers were prevented by using Sn-9Zn. A cavitation model during ultrasonic assisted soldering was proposed. Copyright © 2018 Elsevier B.V. All rights reserved.

Superplastic Forming/Diffusion Bonding Without Interlayer of 5A90 Al-Li Alloy Hollow Double-Layer Structure

NASA Astrophysics Data System (ADS)

Jiang, Shaosong; Jia, Yong; Lu, Zhen; Shi, Chengcheng; Zhang, Kaifeng

2017-09-01

The hollow double-layer structure of 5A90 Al-Li alloy was fabricated by SPF/DB process in this study. The characteristics and mechanism of 5A90 Al-Li alloy with respect to superplasticity and diffusion bonding were investigated. Tensile tests showed that the optimal elongation of tensile specimens was 243.97% at the temperature of 400 °C and the strain rate of 0.001 s-1. Effect of the surface roughness, bonding temperature and bonding time to determine the microstructure and mechanical properties of diffusion bonding joints was investigated, and the optimum bonding parameters were 540 °C/2.5 h/Ra18. Through the finite element simulation, it could be found that the SPF/DB process of hollow double-layer structure was feasible. The hollow double-layer structure of 5A90 Al-Li alloy was manufactured, showing that the thickness distribution of the bonding area was uniform and the thinnest part was the round corner. The SEM images of diffusion bonding joints showed that sound bonding interfaces were obtained in which no discontinuity existed.

Effect of growth time to the properties of Al-doped ZnO nanorod arrays

NASA Astrophysics Data System (ADS)

Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

2018-05-01

Aluminum (Al)-doped zinc oxide (ZnO) nanorod array films were successfully deposited at different growth time on zinc oxide (ZnO) seed layer coated glass substrate using sol-gel immersion method. The morphology images of the films showed that the thicknesses of the films were increased parallel with the increment of growth period. The surface topology of the films displayed an increment of roughness as the growth period increased. Optical properties of the samples exposed that the percentage of transmittances reduced at higher growth time. Besides, the Urbach energy of the films slightly increased as the immersion time increased. The current-voltage (I-V) measurement indicated that the resistance increased as the immersion time increased owing to the appearance of intrinsic layer on top of the nanorods.

Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System

NASA Astrophysics Data System (ADS)

Lai, Bo-Ting; Lee, Ching-Ting; Hong, Jhen-Dong; Yao, Shiau-Lu; Liu, Day-Shan

2010-08-01

The rectifying property of a zinc oxide (ZnO)-based Schottky diode prepared using a radio-frequency (rf) magnetron cosputtering system was improved by enhancing the cosputtered ZnO crystal quality, thereby optimizing the ohmic contact resistance and compensating the Schottky contact surface states. An undoped ZnO layer with a high c-axis orientation and a low internal residual stress was achieved using a postannealing treatment. A homogeneous n-type ZnO-indium tin oxide (ITO) cosputtered film was deposited onto the undoped ZnO layer to optimize the ohmic contact behavior to the Al electrode. The Schottky contact surface of the undoped ZnO layer to the Ni/Au electrode was passivated using an oxygen plasma treatment. Owing to the compensation of the native oxygen vacancies (VO) on the undoped ZnO surface, the leakage current markedly decreased and subsequently led to a quality Schottky diode performance with an ideality factor of 1.23 and a Schottky barrier height of 0.82 eV.

White OLED in Hybrid Structure for Enhancing Color Purity.

PubMed

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-06-01

We synthesized the red emission material, bis(1,4-bis(5-phenyloxazol-2-yl)phenyl) iridium(picolate) [Ir-complexes] and the blue emission material, bis (2-(2-hydroxyphenyl) benzoxazolate)zinc [Zn(HPB)2]. White Organic Light Emitting Diodes were fabricated by using Zn(HPB)2 for a blue emitting layer, Ir-complexes for a red emitting layer and a tris (8-hydroxy quinoline)aluminum [Alq3] for a green emitting layer. The important experimental results obtained, white OLED was fabricated by using double emitting layers of Zn(HPB)2 and Alq3:Ir-complexes, and hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline[BCP]. We also varied the thickness of BCP. When the thickness of BCP layer was 5 nm, white emission was achieved. We obtained a maximum luminance of 5400 cd/m2 at a current density of 650 mA/cm2. The CIE coordinates was (0.339, 0.323) at voltage of 10 V.

New CVD-based method for the growth of high-quality crystalline zinc oxide layers

NASA Astrophysics Data System (ADS)

Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

2016-07-01

High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

High-Temperature Active Soldering of SiC Particle-Reinforced Al-MMC Using a Novel ZnAlGaMgTi Filler Metal

NASA Astrophysics Data System (ADS)

Chen, Biqiang; Zhang, Guifeng; Zhang, Linjie; Xu, Tingting

2017-10-01

In order to broaden the application of SiC particle-reinforced aluminum matrix composite in electronics packaging, newly developed ZnAlGaMgTi filler with a low melting point of 418-441 °C was utilized as filler metal for active soldering of aluminum matrix composites (70 vol.%, SiCp/Al-MMCs) for the first time. The effect of loading pressure on joint properties of ZnAlGaMgTi active filler was investigated. The experimental results indicated that novel filler could successfully solder Al-MMCs, and the presence of Mg in the filler enhanced the penetration of Zn, while the forming of Zn-rich barrier layer influenced the active element MPD (melting point depressant) diffusion into parent composite, and the bulk-like (Mg-Si)-rich phase and Ti-containing phase were readily observed at the interface and bond seam. With the increase in loading pressure, the runout phenomenon appeared more significant, and the filler foil thickness and the Zn penetration depth varied pronouncedly. Sound joints with maximum shear strength of 29.6 MPa were produced at 480 °C at 1 MPa, and the crack occurred adjacent to the boundary of SiC particle and then propagated along the interface. A novel model describing the significant mutual diffusion of Al and Zn atoms between the parent material and solder was proposed.

InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

NASA Astrophysics Data System (ADS)

Kong, Bo Hyun; Cho, Hyung Koun; Kim, Mi Yang; Choi, Rak Jun; Kim, Bae Kyun

2011-07-01

For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of <10 -3-10 -4 Ω cm, a high carrier concentration of >10 20 cm -3, and an excellent optical transmittance of ˜85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia Shengjie; Ni Zheming; Xu Qian

Zn/Al layered double hydroxides (LDHs) were intercalated with the anionic antihypertensive drugs Enalpril, Lisinopril, Captopril and Ramipril by using coprecipitation or ion-exchange technique. TG-MS analyses suggested that the thermal stability of Ena{sup -}, Lis{sup -} (arranged with monolayer, resulted from X-ray diffraction (XRD) and Fourier transform infrared spectra (FT-IR) analysis was enhanced much more than Cap{sup -} and Ram{sup -} (arranged with bilayer). The release studies show that the release rate of all samples markedly decreased in both pH 4.25 and 7.45. However, the release time of Ena{sup -}, Lis{sup -} were much longer compared with Cap{sup -}, Ram{sup -}more » in both pH 4.25 and 7.45, it is possible that the intercalated guests, arranged with monolayer in the interlayer, show lesser repulsive force and strong affinity with the LDH layers. And the release data followed both the Higuchi-square-root law and the first-order equation well. Based on the analysis of batch release, intercalated structural models as well as the TG-DTA results, we conclude that for drug-LDH, stronger the affinity between intercalated anions and the layers is, better the thermal property and the stability to the acid attack of drug-LDH, and the intercalated anions are easier apt to monolayer arrangement within the interlayer, were presented. - Graphical abstract: A series of antihypertensive drugs including Enalpril, Lisinopril, Captopril and Ramipril were intercalated into Zn/Al-NO{sub 3}-LDHs successfully by coprecipitation or ion-exchange technique. We focus on the structure, thermal property and low/controlled release property of as-synthesized drug-LDH composite intended for the possibility of applying these LDH-antihypertensive nanohybrids in drug delivery and controlled release systems.« less

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots.

PubMed

Baranov, Pavel G; Orlinskii, Sergei B; de Mello Donegá, Celso; Schmidt, Jan

2010-10-01

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the (67)Zn nuclear spins and by the hyperfine interaction of the (7)Li, (23)Na and (27)Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)(2) capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the (67)Zn nuclear spins in the core of ZnO QDs and of the (1)H nuclear spins in the Zn(OH)(2) capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques.

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots

PubMed Central

Baranov, Pavel G.; de Mello Donegá, Celso; Schmidt, Jan

2010-01-01

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the 67Zn nuclear spins and by the hyperfine interaction of the 7Li, 23Na and 27Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)2 capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the 67Zn nuclear spins in the core of ZnO QDs and of the 1H nuclear spins in the Zn(OH)2 capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques. PMID:20936163

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

NASA Astrophysics Data System (ADS)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Low temperature Zn diffusion for GaSb solar cell structures fabrication

NASA Technical Reports Server (NTRS)

Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

1995-01-01

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers

NASA Astrophysics Data System (ADS)

Zeng, Linfei

This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or nonconductive state within a given probing voltage region, which can be used as nonvolatile memories.

Controllable synthesis and optical properties of novel ZnO cone arrays via vapor transport at low temperature.

PubMed

Han, Xinhai; Wang, Guanzhong; Jie, Jiansheng; Choy, Wallace C H; Luo, Yi; Yuk, T I; Hou, J G

2005-02-24

Novel ZnO cone arrays with controllable morphologies have been synthesized on silicon (100) substrates by thermal evaporation of metal Zn powder at a low temperature of 570 degrees C without a metal catalyst. Clear structure evolutions were observed using scanning electron microscopy: well-aligned ZnO nanocones, double-cones with growing head cones attached by stem cones, and cones with straight hexagonal pillar were obtained as the distance between the source and the substrates was increased. X-ray diffraction shows that all cone arrays grow along the c-axis. Raman and photoluminescence spectra reveal that the optical properties of the buffer layer between the ZnO cone arrays and the silicon substrates are better than those of the ZnO cone arrays due to high concentration of Zn in the heads of the ZnO cone arrays and higher growth temperature of the buffer layer. The growth of ZnO arrays reveals that the cone arrays are synthesized through a self-catalyzed vapor-liquid-solid (VLS) process.

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

NASA Astrophysics Data System (ADS)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further improvement of the cell we have varied the thickness of the buffer layer i.e. CdS. In addition, the deposition of CdS is carried out using flash evaporation method to improve the CIGS/CdS junction. Heat soak pulses of about 200 °C are also applied for 20 sec for the further upgrading the junction. To protect the CIGS/CdS junction from the high-energy sputtered particles of ZnO, a fine mesh of stainless steel is placed just before the sample holder to enhance the performance of the solar cell. The influence of the thickness of iZnO and CdS has been checked. The maximum V oe and Jsc of about 138 mV and 1.3 mA/cm2 , respectively, are achieved using flash evaporated CIGS layer and flash evaporated CdS thin film. Further improvement of current performance can be done either by adopting some other fabrication method to obtain a denser CIGS absorber layer or replacing the CdS layer with some other efficient buffer layer.

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

PubMed

Chang, Sheng-Po; Shan, Deng

2018-04-01

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp; Fukuda, Hiroshi

We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on opticalmore » anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.« less

UiO-66-NH2 Metal-Organic Framework (MOF) Nucleation on TiO2, ZnO, and Al2O3 Atomic Layer Deposition-Treated Polymer Fibers: Role of Metal Oxide on MOF Growth and Catalytic Hydrolysis of Chemical Warfare Agent Simulants.

PubMed

Lee, Dennis T; Zhao, Junjie; Oldham, Christopher J; Peterson, Gregory W; Parsons, Gregory N

2017-12-27

Metal-organic frameworks (MOFs) chemically bound to polymeric microfibrous textiles show promising performance for many future applications. In particular, Zr-based UiO-66-family MOF-textiles have been shown to catalytically degrade highly toxic chemical warfare agents (CWAs), where favorable MOF/polymer bonding and adhesion are attained by placing a nanoscale metal-oxide layer on the polymer fiber preceding MOF growth. To date, however, the nucleation mechanism of Zr-based MOFs on different metal oxides and how product performance is affected are not well understood. Herein, we provide new insight into how different inorganic nucleation films (i.e., Al 2 O 3 , ZnO, or TiO 2 ) conformally coated on polypropylene (PP) nonwoven textiles via atomic layer deposition (ALD) influence the quality, overall surface area, and the fractional yield of UiO-66-NH 2 MOF crystals solvothermally grown on fiber substrates. Of the materials explored, we find that TiO 2 ALD layers lead to the most effective overall MOF/fiber adhesion, uniformity, and a rapid catalytic degradation rate for a CWA simulant, dimethyl p-nitrophenyl phosphate (DMNP) with t 1/2 = 15 min, 580-fold faster than the catalytic performance of untreated PP textiles. Interestingly, compared to ALD TiO 2 and Al 2 O 3 , ALD ZnO induces a larger MOF yield in solution and mass loading on PP fibrous mats. However, this larger MOF yield is ascribed to chemical instability of the ZnO layer under MOF formation condition, leading to Zn 2+ ions that promote further homogeneous MOF growth. Insights presented here improve understanding of compatibility between active MOF materials and substrate surfaces, which we believe will help advanced MOF composite materials for a variety of useful functions.

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

PubMed

Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

2017-09-13

A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure.

PubMed

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J K; Deen, M Jamal; Qi, Bensheng

2015-03-16

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 10(17) cm(-3). A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm(2), the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

Bonding Cu to Al2O3 with Bi-B-Zn Oxide Glass Via Oxidation-Reduction Reaction

NASA Astrophysics Data System (ADS)

Chen, Jianqiang; Li, Yufeng; Miao, Weiliang; Mai, Chengle; Li, Mingyu

2018-01-01

Bonding Cu on Al2O3 is a key and difficult technology applied in high-power semiconductor devices. A method proposed in this work investigates bonding with a kind of Bi-B-Zn oxide glass powder paste as a solder. Oxidation-reduction reactions between the Cu plate and the solder took place and generated Bi metal during the joining procedure. With an increase in the joining temperature, the tensile strength increased due to the increase of Bi metal formation. The Bi metal played an important role in joining Cu and Al2O3 because of its much better wettability on Cu than that of the oxides. A compound ZnAl2O4 was observed to form between the Al2O3 ceramic and oxide layer, which strengthened the bond.

Gadolinium-Doped Gallic Acid-Zinc/Aluminium-Layered Double Hydroxide/Gold Theranostic Nanoparticles for a Bimodal Magnetic Resonance Imaging and Drug Delivery System

PubMed Central

Sani Usman, Muhammad; Hussein, Mohd Zobir; Fakurazi, Sharida; Ahmad Saad, Fathinul Fikri

2017-01-01

We have developed gadolinium-based theranostic nanoparticles for co-delivery of drug and magnetic resonance imaging (MRI) contrast agent using Zn/Al-layered double hydroxide as the nanocarrier platform, a naturally occurring phenolic compound, gallic acid (GA) as therapeutic agent, and Gd(NO3)3 as diagnostic agent. Gold nanoparticles (AuNPs) were grown on the system to support the contrast for MRI imaging. The nanoparticles were characterized using techniques such as Hi-TEM, XRD, ICP-ES. Kinetic release study of the GA from the nanoparticles showed about 70% of GA was released over a period of 72 h. The in vitro cell viability test for the nanoparticles showed relatively low toxicity to human cell lines (3T3) and improved toxicity on cancerous cell lines (HepG2). A preliminary contrast property test of the nanoparticles, tested on a 3 Tesla MRI machine at various concentrations of GAGZAu and water (as a reference) indicates that the nanoparticles have a promising dual diagnostic and therapeutic features to further develop a better future for clinical remedy for cancer treatment. PMID:28858229

An Inexpensive Co-Intercalated Layered Double Hydroxide Composite with Electron Donor-Acceptor Character for Photoelectrochemical Water Splitting

PubMed Central

Zheng, Shufang; Lu, Jun; Yan, Dongpeng; Qin, Yumei; Li, Hailong; Evans, David G.; Duan, Xue

2015-01-01

In this paper, the inexpensive 4,4-diaminostilbene-2,2-disulfonate (DAS) and 4,4-dinitro-stilbene-2,2- disulfonate (DNS) anions with arbitrary molar ratios were successfully co-intercalated into Zn2Al-layered double hydroxides (LDHs). The DAS(50%)-DNS/LDHs composite exhibited the broad UV-visible light absorption and fluorescence quenching, which was a direct indication of photo-induced electron transfer (PET) process between the intercalated DAS (donor) and DNS (acceptor) anions. This was confirmed by the matched HOMO/LUMO energy levels alignment of the intercalated DAS and DNS anions, which was also compatible for water splitting. The DAS(50%)-DNS/LDHs composite was fabricated as the photoanode and Pt as the cathode. Under the UV-visible light illumination, the enhanced photo-generated current (4.67 mA/cm2 at 0.8 V vs. SCE) was generated in the external circuit, and the photoelectrochemical water split was realized. Furthermore, this photoelectrochemical water splitting performance had excellent crystalline, electrochemical and optical stability. Therefore, this novel inorganic/organic hybrid photoanode exhibited potential application prospect in photoelectrochemical water splitting. PMID:26174201

Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Corsino, Dianne C.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Takahashi, Kiyoshi; Ishikawa, Yasuaki; Uraoka, Yukiharu

2018-06-01

Atomic layer deposition (ALD) of Al2O3 using dimethylaluminum hydride (DMAH) was demonstrated as an effective passivation for amorphous InGaZnO thin-film transistors (TFTs). Compared with the most commonly used precursor, trimethylaluminum, TFTs fabricated with DMAH showed improved stability, resulting from the lower amount of oxygen vacancies, and hence fewer trap sites, as shown by X-ray photoelectron spectroscopy (XPS) depth profiling analysis. We found that prolonged plasma exposure during ALD can eliminate the hump phenomenon, which is only present for DMAH. The higher Al2O3 deposition rate when using DMAH is in line with the requirements of emerging techniques, such as spatial ALD, for improving fabrication throughput.

Nanocrystalline-to-amorphous transition in nanolaminates grown by low temperature atomic layer deposition and related mechanical properties

NASA Astrophysics Data System (ADS)

Raghavan, R.; Bechelany, M.; Parlinska, M.; Frey, D.; Mook, W. M.; Beyer, A.; Michler, J.; Utke, I.

2012-05-01

We report on a comprehensive structural and nanoindentation study of nanolaminates of Al2O3 and ZnO synthesized by atomic layer deposition (ALD). By reducing the bilayer thickness from 50 nm to below 1 nm, the nanocrystal size could be controlled in the nanolaminate structure. The softer and more compliant response of the multilayers as compared to the single layers of Al2O3 and ZnO is attributed to the structural change from nanocrystalline to amorphous at smaller bilayer thicknesses. It is also shown that ALD is a unique technique for studying the inverse Hall-Petch softening mechanism (E. Voce and D. Tabor, J. Inst. Metals 79(12), 465 (1951)) related to grain size effects in nanomaterials.

Incorporation of rare-earth ions in Mg-Al layered double hydroxides: intercalation with an [Eu(EDTA)] - chelate

NASA Astrophysics Data System (ADS)

Li, Cang; Wang, Ge; Evans, David G.; Duan, Xue

2004-12-01

Reaction of an aqueous slurry of an Mg 2Al-NO 3 layered double hydroxide with a four-fold excess of Na[Eu(EDTA)] gives a material which analyses for Mg 0.68Al 0.32(OH) 2[Eu(EDTA)] 0.10(CO 3) 0.11·0.66H 2O. The interlayer spacing of the material is 13.8 Å, corresponding to a gallery height of 9.0 Å, which accords with the maximal dimensions (9-10 Å) of the anion in metal-EDTA complex salts as determined by single crystal X-ray diffraction. Geometrical considerations show that the charge density on the layered double hydroxide layers is too high to be balanced by intercalation of [Eu(EDTA)] - alone, necessitating the co-intercalation of carbonate ions which have a much higher charge density.

Transparent nanotubular capacitors based on transplanted anodic aluminum oxide templates.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Wu, Wenhui; Yue, Jin; Liu, Chang

2015-03-11

Transparent AlZnO/Al2O3/AlZnO nanocapacitor arrays have been fabricated by atomic layer deposition in anodic aluminum oxide templates transplanted on the AlZnO/glass substrates. A high capacitance density of 37 fF/μm(2) is obtained, which is nearly 5.8 times bigger than that of planar capacitors. The capacitance density almost remains the same in a broad frequency range from 1 kHz to 200 kHz. Moreover, a low leakage current density of 1.7 × 10(-7) A/cm(2) at 1 V has been achieved. The nanocapacitors exhibit an average optical transmittance of more than 80% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

Epitaxial growth of (001)-oriented Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on a-plane sapphire with an MgO/ZnO bridge layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao Bo; Liu Hongrui; Avrutin, Vitaliy

2009-11-23

High quality (001)-oriented Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown on a-plane sapphire (1120) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30 deg., which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [1120]more » and BST [110]/MgO [110]//ZnO [1100]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.« less

Efficient drug delivery using SiO2-layered double hydroxide nanocomposites.

PubMed

Li, Li; Gu, Zi; Gu, Wenyi; Liu, Jian; Xu, Zhi Ping

2016-05-15

MgAl-layered double hydroxide (MgAl-LDH) nanoparticles have great potentials in drug and siRNA delivery. In this work, we used a nanodot-coating strategy to prepare SiO2 dot-coated layered double hydroxide (SiO2@MgAl-LDH) nanocomposites with good dispersibility and controllable size for drug delivery. The optimal SiO2@MgAl-LDH nanocomposite was obtained by adjusting synthetic parameters including the mass ratio of MgAl-LDH to SiO2, the mixing temperature and time. The optimal SiO2@MgAl-LDH nanocomposite was shown to have SiO2 nanodots (10-15nm in diameter) evenly deposited on the surface of MgAl-LDHs (110nm in diameter) with the plate-like morphology and the average hydrodynamic diameter of 170nm. We further employed SiO2@MgAl-LDH nanocomposite as a nanocarrier to deliver methotrexate (MTX), a chemotherapy drug, to the human osteosarcoma cell (U2OS) and found that MTX delivered by SiO2@MgAl-LDH nanocomposite apparently inhibited the U2OS cell growth. Copyright © 2016 Elsevier Inc. All rights reserved.

Molecular structure of Mg-Al, Mn-Al and Zn-Al halotrichites-type double sulfates--an infrared spectroscopic study.

PubMed

Palmer, Sara J; Frost, Ray L

2011-05-01

Near infrared (NIR), X-ray diffraction (XRD) and infrared (IR) spectroscopy have been applied to halotrichites of the formula MgAl(2)(SO(4))(4)·22H(2)O, MnAl(2)(SO(4))(4)·22H(2)O and ZnAl(2)(SO(4))(4)·22H(2)O. Comparison of the halotrichites in different spectral regions has shown that the incorporation of a divalent transition metal into the halotrichite structure causes a shift in OH stretching band positions to lower wavenumbers. Therefore, an increase of the hydrogen bond strength of the bonded water is observed for divalent cations with a larger molecular mass. XRD has confirmed the formation of halotrichite for all three samples and characteristic peaks of halotrichite have been identified for each halotrichite-type compound. It has been observed that Mg-Al and Mn-Al halotrichite are very similar in structure, while Zn-Al showed several differences particularly in the NIR spectra. This work has shown that compounds with halotrichite structures can be synthesised and characterised by infrared and NIR spectroscopy. Copyright © 2011 Elsevier B.V. All rights reserved.

Thermal and Microstructure Characterization of Zn-Al-Si Alloys and Chemical Reaction with Cu Substrate During Spreading

NASA Astrophysics Data System (ADS)

Berent, Katarzyna; Pstruś, Janusz; Gancarz, Tomasz

2016-08-01

The problems associated with the corrosion of aluminum connections, the low mechanical properties of Al/Cu connections, and the introduction of EU directives have forced the potential of new materials to be investigated. Alloys based on eutectic Zn-Al are proposed, because they have a higher melting temperature (381 °C), good corrosion resistance, and high mechanical strength. The Zn-Al-Si cast alloys were characterized using differential scanning calorimetry (DSC) measurements, which were performed to determine the melting temperatures of the alloys. Thermal linear expansion and electrical resistivity measurements were performed at temperature ranges of -50 to 250 °C and 25 to 300 °C, respectively. The addition of Si to eutectic Zn-Al alloys not only limits the growth of phases at the interface of liquid solder and Cu substrate but also raises the mechanical properties of the solder. Spreading test on Cu substrate using eutectic Zn-Al alloys with 0.5, 1.0, 3.0, and 5.0 wt.% of Si was studied using the sessile drop method in the presence of QJ201 flux. Spreading tests were performed with contact times of 1, 8, 15, 30, and 60 min, and at temperatures of 475, 500, 525, and 550 °C. After cleaning the flux residue from solidified samples, the spreadability of Zn-Al-Si on Cu was determined. Selected, solidified solder/substrate couples were cross-sectioned, and the interfacial microstructures were studied using scanning electron microscopy and energy dispersive x-ray spectroscopy. The growth of the intermetallic phase layer was studied at the solder/substrate interface, and the activation energy of growth of Cu5Zn8, CuZn4, and CuZn phases were determined.

Cu sbnd Al sbnd Fe layered double hydroxides with CO32- and anionic surfactants with different alkyl chains in the interlayer

NASA Astrophysics Data System (ADS)

Trujillano, Raquel; Holgado, María Jesús; González, José Luis; Rives, Vicente

2005-08-01

Layered double hydroxides (LDHs), with the hydrotalcite-like structure containing Cu(II), Al(III) and Fe(III) in the layers, and different alkyl sulfonates in the interlayer, have been prepared and characterized by powder X-ray diffraction, FT-IR spectroscopy, differential thermal analysis and thermogravimetric analysis. Pure crystalline phases have been obtained in all cases. Upon heating, combustion of the organic chain takes place at lower temperature than the corresponding sodium salts.

Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.

PubMed

Liang, H K; Yu, S F; Yang, H Y

2010-02-15

An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (approximately 150 degrees C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by approximately 5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is approximately 2.2 time larger than that of TM polarization.

Cation ordering and effect of biaxial strain in double perovskite CsRbCaZnCl 6

DOE PAGES

Pilania, G.; Uberuaga, B. P.

2015-03-19

Here, we investigate the electronic structure, energetics of cation ordering, and effect of biaxial strain on double perovskite CsRbCaZnCl 6 using first-principles calculations based on density functional theory. The two constituents (i.e., CsCaCl 3 and RbZnCl 3) forming the double perovskite exhibit a stark contrast. While CsCaCl 3 is known to exist in a cubic perovskite structure and does not show any epitaxial strain induced phase transitions within an experimentally accessible range of compressive strains, RbZnCl 3 is thermodynamically unstable in the perovskite phase and exhibits ultra-sensitive response at small epitaxial strains if constrained in the perovskite phase. We showmore » that combining the two compositions in a double perovskite structure not only improves overall stability but also the strain-polarization coupling of the material. Our calculations predict a ground state with P4/nmm space group for the double perovskite, where A-site cations (i.e., Cs and Rb) are layer-ordered and B-site cations (i.e., Ca and Zn) prefer a rocksalt type ordering. The electronic structure and bandgap in this system are shown to be quite sensitive to the B-site cation ordering and is minimally affected by the ordering of A-site cations. We find that at experimentally accessible compressive strains CsRbCaZnCl 6 can be phase transformed from its paraelectric ground state to an antiferroelectric state, where Zn atoms contribute predominantly to the polarization. Furthermore, both energy difference and activation barrier for a transformation between this antiferroelectric state and the corresponding ferroelectric configuration are predicted to be small. As a result, the computational approach presented here opens a new pathway towards a rational design of novel double perovskites with improved strain response and functionalities.« less

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

PubMed

Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

2005-07-01

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

NASA Astrophysics Data System (ADS)

Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

2016-07-01

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

Sol-gel synthesis and characterization of hybrid inorganic-organic Tb(III)-terephthalate containing layered double hydroxides

NASA Astrophysics Data System (ADS)

Smalenskaite, A.; Salak, A. N.; Ferreira, M. G. S.; Skaudzius, R.; Kareiva, A.

2018-06-01

Mg3/Al1 and Mg3Al1-xTbx layered double hydroxides (LDHs) intercalated with terephthalate anion were synthesized using sol-gel method. The obtained materials were characterized by X-ray diffraction (XRD) analysis, infrared (FTIR) spectroscopy, fluorescence spectroscopy (FLS) and scanning electron microscopy (SEM). The Tb3+ substitution effects in the Mg3Al1-xTbx LDHs were investigated by changing the Tb3+ concentration in the cation layers. The study indicates that the organic guest-terephthalate in the interlayer spacing of the LDH host influences the luminescence of the hybrid inorganic-organic materials.

Microstructural Development in a Laser-Remelted Al-Zn-Si-Mg Coating.

PubMed

Godec, M; Podgornik, B; Nolan, D

2017-11-23

In the last five decades, there has been intense development in the field of Zn-Al galvanic coating modification. Recently, Mg was added to improve corrosion properties. Further improvements to the coating are possible with additional laser surface treatment. In this article, we focus on remelting the Al-Zn-Mg-Si layer, using a diode laser with a wide-beam format, concentrating on the microstructure development during extreme cooling rates. Laser remelting of the Al-Zn-Mg-Si coating and rapid self-quenching produces a finer grain size, and a microstructure that is substantially refined and homogenized with respect to the phase distribution. Using EBSD results, we are able to understand microstructure modification. The laser modified coating has some porosity and intergranular cracking which are difficult to avoid, however this does not seem to be detrimental to mechanical properties, such as ductility on bending. The newly developed technology has a high potential for improved corrosion performance due to highly refined microstructure.

Delaminating and restacking MgAl-layered double hydroxide monitored and characterized by a range of instrumental methods

NASA Astrophysics Data System (ADS)

Muráth, Szabolcs; Somosi, Zoltán; Tóth, Ildikó Y.; Tombácz, Etelka; Sipos, Pál; Pálinkó, István

2017-07-01

The delamination-restacking properties of MgAl-layered double hydroxide (MgAl-LDH) were studied in various solvents. The LDH samples were successfully delaminated in polar amides (formamide, N-methylformamide, N-methylacetamide). Usually, delamination was finalized by ultrasonic treatment. As rehydrating solutions, numerous Na-salts with single-, double- and triple-charged anions were used. Reconstruction was accomplished with anions of one or two negative charges, but triple-charged ones generally disrupted the rebuilding process, likely, because their salts with the metals of the LDH are very stable, and the thin layers can more readily transform to salts than the ordered materials. Samples and delamination-restacking processes were characterized by X-ray diffractometry (XRD), infrared spectroscopy (IR), dynamic light scattering (DLS), scanning electron microscopy (SEM) and energy-dispersive X-ray analysis (EDX).

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

PubMed Central

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J. K.; Deen, M. Jamal; Qi, Bensheng

2015-01-01

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 1017 cm−3. A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm2, the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure. PMID:25773146

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

PubMed

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Incorporation of Keplerate-type Mo-O based macroanions into Zn2Al-LDH results in the formation of all-inorganic composite films with remarkable third-order optical nonlinearity.

PubMed

Ren, Haizhou; Shehzad, Farooq Khurum; Zhou, Yunshan; Zhang, Lijuan; Iqbal, Arshad; Long, Yi

2018-05-01

Herein, new all-inorganic transparent composite films with the formula (Zn2Al-LDH/{Mo132-Ac})n have been fabricated by a layer-by-layer method using the exfoliated Zn2Al-LDH monolayer nanosheets and Keplerate-type macroanion {Mo132-Ac}. They were characterized by UV-vis absorption spectroscopy, SEM, AFM, and XPS techniques. The Z-scan measurements, which were conducted under laser irradiation at a wavelength of 532 nm, a pulse width of 6 ns, a repetition rate of 10 Hz, and the light intensity at a focus E0 of 10 μJ, revealed that all the films had notable saturated absorption and self-defocusing effect with a large third-order optical nonlinear susceptibility χ(3). With an increase in the number of layers (i.e., n) corresponding to the increase in the thickness of the films, the third-order nonlinear absorption β and refractive effects of the films were improved (i.e., the χ(3) value was up to 1.99 × 10-11 esu when n = 24); this implied that the NLO responses could be modified by fine-tuning the thickness of the composite films to meet the demands of different devices.

Double layer zinc-UDP coordination polymers: structure and properties.

PubMed

Qiu, Qi-Ming; Gu, Leilei; Ma, Hongwei; Yan, Li; Liu, Minghua; Li, Hui

2018-05-17

A homochiral Zn-UDP coordination polymer with an alternating parallel ABAB sequence was constructed and studied by X-ray single crystal diffraction analysis. Its crystal structure shows that there are potentially open sites in the 2D layers. The activation of the sites makes the coordination polymer a fluorescent sensor for novel heterogeneous detection of amino acids.

Tunable surface acoustic wave device based on acoustoelectric interaction in ZnO/GaN heterostructures

NASA Astrophysics Data System (ADS)

Li, Rui; Reyes, Pavel I.; Ragavendiran, Sowmya; Shen, H.; Lu, Yicheng

2015-08-01

A tunable surface acoustic wave (SAW) device is developed on a multilayer structure which consists of an n-type semiconductor ZnO layer and a Ni-doped piezoelectric ZnO layer deposited on a GaN/c-Al2O3 substrate. The unique acoustic dispersion relationship between ZnO and GaN generates the multi-mode SAW response in this structure, facilitating high frequency operation. A dc bias voltage is applied to a Ti/Au gate layer deposited on the path of SAW delay line to modulate the electrical conductivity for tuning the acoustic velocity. For devices operating at 1.25 GHz, a maximum SAW velocity change of 0.9% is achieved, equivalent to the frequency change of 11.2 MHz. This voltage-controlled frequency tuning device has potential applications in resettable sensors, adaptive signal processing, and secure wireless communication.

Synthesis and selective IR absorption properties of iminodiacetic-acid intercalated MgAl-layered double hydroxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Lijing; Xu Xiangyu; Evans, David G.

2010-05-15

An MgAl-NO{sub 3}-layered double hydroxide (LDH) precursor has been prepared by a method involving separate nucleation and aging steps (SNAS). Reaction with iminodiacetic acid (IDA) under weakly acidic conditions led to the replacement of the interlayer nitrate anions by iminodiacetic acid anions. The product was characterized by XRD, FT-IR, TG-DTA, ICP, elemental analysis and SEM. The results show that the original interlayer nitrate anions of LDHs precursor were replaced by iminodiacetic acid anions and that the resulting intercalation product MgAl-IDA-LDH has an ordered crystalline structure. MgAl-IDA-LDH was mixed with low density polyethylene (LDPE) using a masterbatch method. LDPE films filledmore » with MgAl-IDA-LDH showed a higher mid to far infrared absorption than films filled with MgAl-CO{sub 3}-LDH in the 7-25 {mu}m range, particularly in the key 9-11 {mu}m range required for application in agricultural plastic films. - Graphical abstract: Intercalation of iminodiacetic acid (IDA) anions in a MgAl-NO{sub 3}-layered double hydroxide host leads to an enhancement of its infrared absorbing ability for application in agricultural plastic films.« less

Effect of Initial Iron Content in a Zinc Bath on the Dissolution Rate of Iron During a Hot Dip Galvanizing Process

NASA Astrophysics Data System (ADS)

Lee, Sang Myung; Lee, Suk Kyu; Paik, Doo-Jin; Park, Joo Hyun

2017-04-01

The mechanism of iron dissolution and the effect of initial Fe content in a Zn bath on the dissolution rate of iron were investigated using a finger rotating method (FRM). When the initial iron content, [Fe]°, in the zinc bath was less than the solubility limit, the iron content in the zinc bath showed a rapid increase, whereas a moderate increase was observed when [Fe]° was close to the solubility limit. Based on Eisenberg's kinetic model, the mass transfer coefficient of iron in the present experimental condition was calculated to be k M = 1.2 × 10-5 m/s, which was similar to the results derived by Giorgi et al. under industrial practice conditions. A dissolution of iron occurred even when the initial iron content in the zinc bath was greater than the solubility limit, which was explained by the interfacial thermodynamics in conjunction with the morphology of the surface coating layer. By analyzing the diffraction patterns using TEM, the outermost dendritic-structured coating layer was confirmed as FeZn13 ( ζ). In order to satisfy the local equilibrium based on the Gibbs-Thomson equation, iron in the dendrite-structured phase spontaneously dissolved into the zinc bath, resulting in the enrichment of iron in front of the dendrite tip. Through the diffusion boundary layer in front of the dendritic-structured layer, dissolved Fe atoms diffused out and reacted with Zn and small amounts of Al, resulting in the formation of dross particles such as FeZn10Al x ( δ). It was experimentally confirmed that the smaller the difference between the initial iron content in the zinc bath and the iron solubility limit at a given temperature, the lower the number of formed dross particles.

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells.

PubMed

Lin, Ming-Yi; Wu, Shang-Hsuan; Hsiao, Li-Jen; Budiawan, Widhya; Chen, Shih-Lun; Tu, Wei-Chen; Lee, Chia-Yen; Chang, Yia-Chung; Chu, Chih-Wei

2018-04-25

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

Structural optimization of interpenetrated pillared-layer coordination polymers for ethylene/ethane separation.

PubMed

Kishida, Keisuke; Horike, Satoshi; Watanabe, Yoshihiro; Tahara, Mina; Inubushi, Yasutaka; Kitagawa, Susumu

2014-06-01

With the goal of achieving effective ethylene/ethane separation, we evaluated the gas sorption properties of four pillared-layer-type porous coordination polymers with double interpenetration, [Zn2(tp)2(bpy)]n (1), [Zn2(fm)2(bpe)]n (2), [Zn2(fm)2(bpa)]n (3), and [Zn2(fm)2(bpy)]n (4) (tp = terephthalate, bpy = 4,4'-bipyridyl, fm = fumarate, bpe = 1,2-di(4-pyridyl)ethylene and bpa = 1,2-di(4-pyridyl)ethane). It was found that 4, which contains the narrowest pores of all of these compounds, exhibited ethylene-selective sorption profiles. The ethylene selectivity of 4 was estimated to be 4.6 at 298 K based on breakthrough experiments using ethylene/ethane gas mixtures. In addition, 4 exhibited a good regeneration ability compared with a conventional porous material. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Alternative Dielectric Films for rf MEMS Capacitive Switches Deposited using Atomic Layer Deposited Al2O3/ZnO Alloys

DTIC Science & Technology

2006-07-02

A s c c s r t h s l © K 1 b c A a e t s C t o 0 d Sensors and Actuators A 135 (2007) 262–272 Alternative dielectric films for rf MEMS capacitive...Zn concentrations in the alloy films , which was lower than expected. Atomic force microscopy images evealed an average surface roughness of 0.27 nm...that was independent of deposition temperature and film composition. The dielectric constants of he Al2O3/ZnO ALD alloys films were calculated to be

Recent Advances in the Synthesis, Characterization and Application of Zn+-containing Heterogeneous Catalysts.

PubMed

Chen, Guangbo; Zhao, Yufei; Shang, Lu; Waterhouse, Geoffrey I N; Kang, Xiaofeng; Wu, Li-Zhu; Tung, Chen-Ho; Zhang, Tierui

2016-07-01

Monovalent Zn + (3d 10 4s 1 ) systems possess a special electronic structure that can be exploited in heterogeneous catalysis and photocatalysis, though it remains challenge to synthesize Zn + -containing materials. By careful design, Zn + -related species can be synthesized in zeolite and layered double hydroxide systems, which in turn exhibit excellent catalytic potential in methane, CO and CO 2 activation. Furthermore, by utilizing advanced characterization tools, including electron spin resonance, X-ray absorption fine structure and density functional theory calculations, the formation mechanism of the Zn + species and their structure-performance relationships can be understood. Such advanced characterization tools guide the rational design of high-performance Zn + -containing catalysts for efficient energy conversion.

A route to improved extraction efficiency of light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhu, H.; Shan, C. X.; Wang, L. K.; Yang, Y.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.

2010-01-01

The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.

Recent Advances in the Synthesis, Characterization and Application of Zn+‐containing Heterogeneous Catalysts

PubMed Central

Chen, Guangbo; Zhao, Yufei; Shang, Lu; Waterhouse, Geoffrey I. N.; Kang, Xiaofeng; Wu, Li‐Zhu; Tung, Chen‐Ho

2016-01-01

Monovalent Zn+ (3d104s1) systems possess a special electronic structure that can be exploited in heterogeneous catalysis and photocatalysis, though it remains challenge to synthesize Zn+‐containing materials. By careful design, Zn+‐related species can be synthesized in zeolite and layered double hydroxide systems, which in turn exhibit excellent catalytic potential in methane, CO and CO2 activation. Furthermore, by utilizing advanced characterization tools, including electron spin resonance, X‐ray absorption fine structure and density functional theory calculations, the formation mechanism of the Zn+ species and their structure‐performance relationships can be understood. Such advanced characterization tools guide the rational design of high‐performance Zn+‐containing catalysts for efficient energy conversion. PMID:27818902

Evolution of crystal structure during the initial stages of ZnO atomic layer deposition

DOE PAGES

Boichot, R.; Tian, L.; Richard, M. -I.; ...

2016-01-05

In this study, a complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al 2O 3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films depend strongly on the nature of the interfacial bonds.

Optical parameters of ITO/TPD/Alq3/Al luminescent structures, containing arrays of CdSe/ZnS colloidal quantum dots

NASA Astrophysics Data System (ADS)

Mikhailov, I. I.; Tarasov, S. A.; Lamkin, I. A.; Tadtaev, P. O.; Kozlovich, L. I.; Solomonov, A. V.; Stepanov, E. M.

2016-08-01

The luminescent organic ITO/TPD/Alq3/Al structures and CdSe/ZnS quantum dots (QD) arrays were created. Electrical and optical properties of the samples were examined. The luminescence of the layers and QD arrays was shown in the range of wavelengths from 400 to 680 nm. Luminescent structures with phosphors corresponding to the emission standards with CRI>98 and with color temperature of 5500 K and 6504 K were created.

Influence of Different Aluminum Sources on the NH3 Gas-Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Ozutok, Fatma; Karaduman, Irmak; Demiri, Sani; Acar, Selim

2018-02-01

Herein we report Al-doped ZnO films (AZO) deposited on the ZnO seed layer by chemical bath deposition method. Al powder, Al oxide and Al chloride were used as sources for the deposition process and investigated for their different effects on the NH3 gas-sensing performance. The morphological and microstructural properties were investigated by employing x-ray powder diffraction, scanning electron microscopy analysis and energy-dispersive x-ray spectroscopy. The characterization studies showed that the AZO thin films are crystalline and exhibit a hexagonal wurtzite structure. Ammonia (NH3) gas-sensing measurements of AZO films were performed at different concentration levels and different operation temperatures from 50°C to 210°C. The sample based on powder-Al source showed a higher response, selectivity and short response/recovery time than the remaining samples. The powder Al sample exhibited 33% response to 10-ppm ammonia gas at 190°C, confirming a strong dependence on the dopant source type.

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

The ZnSe(110) puzzle - Comparison with GaAs(110)

NASA Technical Reports Server (NTRS)

Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

1984-01-01

The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

Calculation of DSSC parameters based on ZnO nanorod/TiO2 mesoporous photoanode

NASA Astrophysics Data System (ADS)

Safriani, L.; Nurrida, A.; Mulyana, C.; Susilawati, T.; Bahtiar, A.; Aprilia, A.

2017-07-01

Photoanode of dye sensitized solar cell (DSSC) plays an important role as electron transport media to accept photogenerated electron from excited state of dye. There are several physical properties that are required from photoanode of DSSC. It should be highly transparent, have large surface area, has a conduction band lower than LUMO of dye molecule, has high charge carrier mobility and finally has a good stability in redox electrolyte process. In this work, DSSC with structure FTO/ZnO nanorod/TiO2 mesoporous/Ru-dye/gel electrolyte/ Pt/FTO has been fabricated. In order to modified the structures of photoanode, ZnO nanorod was grown on aluminium doped ZnO seed layer by variation concentration of Al (0 wt%, 0.5 wt% and 1.0 wt%). Zinc nitrate hexahydrate and hexamethylenetetramine used as raw materials for ZnO nanorod growth solution and deposited by self-assembly methods on FTO/Al doped ZnO seed layer. It is then followed by deposition of titania (TiO2) paste by screen printing methods. DSSC parameters i.e. ideally factor (n), series resistance (RS ), and shunt resistance (RSH ) was derived from current density-voltage (I-V) curve using the simplify equation of ideal diode model. The influences of ZnO photoanode structures to the solar cell performance will be completely discussed.

Solvent-free synthesis of new metal phosphites with double-layered, pillared-layered, and framework structures

NASA Astrophysics Data System (ADS)

Liu, Lin; Zhang, Wei; Shi, Zhonghua; Chen, Yaoqiang; Lin, Zhien

2014-12-01

Three new metal phosphites, formulated as (H3O)2·Mn2(HPO3)3 (1), Co(bpy) (H2O) (HPO3) (2), and H2tmpda·Zn3(HPO3)4 (3), have been synthesized under solvent-free conditions, where bpy = 4,4‧-bipyridine, and tmpda = N,N,N‧,N‧-tetramethyl-1,3-propanediamine. Compound 1 has a double-layered structure with a thickness of 5.68 Å. Compound 2 has an inorganic-organic hybrid framework with cobalt phosphite layers pillared by bpy ligands. Compound 3 has a three-dimensional open-framework structure containing 8-ring channels. The temperature dependence of the magnetic susceptibility of compounds 1 and 2 were also investigated.

Reflective coating for near-infrared immersion gratings

NASA Astrophysics Data System (ADS)

Kuzmenko, Paul J.; Ikeda, Yuji; Kobayashi, Naoto; Mirkarimi, Paul B.; Alameda, Jennifer B.

2012-09-01

Achieving high reflectivity from an immersed grating facet can be challenging in the near infrared. The reflectivity of metallic coatings in common use, such as Al and Cr/Au, decrease with decreasing wavelength in the near IR. A layer of copper on ZnSe or ZnS should have a high, immersed reflectivity based on tabulated values of refractive index, but in fact performs poorly. We attribute this to a chemical reaction between the copper and the selenium or sulfur. A non-reactive intermediate layer can prevent this problem. Since reflectivity at an interface increases with increasing difference in refractive index, it is beneficial to choose an intermediate layer of low index. A further improvement is gained by adjusting the layer thickness so that reflections from the two interfaces of the intermediate layer add constructively. We sputtered 130 nm of SiO2 onto ZnSe and ZnS substrates followed by 200 nm of Cu. The copper was then coated with 5 nm of SiC as a protective capping layer. Immersed reflectivity measured shortly after coating exceeded 95% between 1500 and 1100 nm and exceeded 90% down to 850 nm. A repeat measurement after long term exposure to high humidity conditions showed no changes.

Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashistha, Indu B., E-mail: indu-139@yahoo.com; Sharma, S. K.; Sharma, Mahesh C.

2015-08-28

In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5more » eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.« less

Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

NASA Astrophysics Data System (ADS)

Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen

2018-01-01

In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.

Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

NASA Technical Reports Server (NTRS)

Xing, G. C.; Bachmann, Klaus J.

1993-01-01

The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

The effect of metallic oxide deposition on the electrochemical behaviour of Al-Zn-Mg-Sn alloy in natural tropical seawater

NASA Astrophysics Data System (ADS)

Din Yati, M. S.; Nazree Derman, Mohd; Isa, M. C.; Y Ahmad, M.; Yusoff, N. H. N.; Muhammad, M. M.; Nain, H.

2014-06-01

The potential of aluminium alloys as anode materials in cathodic protection system has been explored and a significant improvement has been achieved. However, for marine application, it is quite difficult to maintain continuous activation process due to passivation behavior of aluminum alloys. Therefore, to choose the best activation mechanism for aluminium alloy in marine environment, it has to be considered from various points such as alloy composition and surface treatment. This paper report the effect of metallic ruthenium oxide (RuO2) deposition on the surface of as-cast Al-Zn-Mg-Sn alloy and to study the effect of its presence on the electrochemical behavior using direct current (DC) electrochemical polarization and current capacity measurement. The morphology and topography of corroded surface were studied by the aid of scanning electron microscope (SEM) and confocal laser scanning microscope (CLSM) respectively. Results from this study showed that the presence of intermetallic compound (Mg2Sn) and also mixed metal oxide compound (Al2O3 and RuO2) on the alloy surface has been very useful in improving electrochemical reaction and charge transfer activities in chloride containing solution. This study also showed that RuO2 catalytic coating applied on the surface of Al-Zn-Mg-Sn alloy has slightly increased the corrosion current density compared to Al-Zn-Mg-Sn without RuO2. The corrosion morphology and topography of corroded surface of Al-Zn-Mg-Sn alloy deposited with RuO2 was found more uniform corrosion attack with the formation of porous and fibrous mud-like crack on outer layer. Based on surface morphology and 3D topographic studies, these features were believed to facilitate ionic species adsorption and diffusion through corrosion product layer at solution-alloy interface. Deposited RuO2 films also was found to increase of current efficiency by more than 10%.

Single and multi-layered core-shell structures based on ZnO nanorods obtained by aerosol assisted chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.

2015-07-15

Core–shell nanorod structures were prepared by a sequential synthesis using an aerosol assisted chemical vapor deposition technique. Several samples consisting of ZnO nanorods were initially grown over TiO{sub 2} film-coated borosilicate glass substrates, following the synthesis conditions reported elsewhere. Later on, a uniform layer consisting of individual Al, Ni, Ti or Fe oxides was grown onto ZnO nanorod samples forming the so-called single MO{sub x}/ZnO nanorod core–shell structures, where MO{sub x} was the metal oxide shell. Additionally, a three-layer core–shell sample was developed by growing Fe, Ti and Fe oxides alternately, onto the ZnO nanorods. The microstructure of the core–shellmore » materials was characterized by grazing incidence X-ray diffraction, scanning and transmission electron microscopy. Energy dispersive X-ray spectroscopy was employed to corroborate the formation of different metal oxides. X-ray diffraction outcomes for single core–shell structures showed solely the presence of ZnO as wurtzite and TiO{sub 2} as anatase. For the multi-layered shell sample, the existence of Fe{sub 2}O{sub 3} as hematite was also detected. Morphological observations suggested the existence of an outer material grown onto the nanorods and further microstructural analysis by HR-STEM confirmed the development of core–shell structures in all cases. These studies also showed that the individual Al, Fe, Ni and Ti oxide layers are amorphous; an observation that matched with X-ray diffraction analysis where no apparent extra oxides were detected. For the multi-layered sample, the development of a shell consisting of three different oxide layers onto the nanorods was found. Overall results showed that no alteration in the primary ZnO core was produced during the growth of the shells, indicating that the deposition technique used herein was and it is suitable for the synthesis of homogeneous and complex nanomaterials high in quality and purity. In addition, materials absorptance determined from the total transmittance and reflectance spectra revealed a broader absorption interval including visible light, indicating potential uses of these nanostructures on solar energy appliances. - Graphical abstract: Display Omitted - Highlights: • Uniform ZnO nanorods (core)–metal oxide (shell) were obtained sequentially by AACVD. • Shells were structured of homogeneous single or multi-layered non-mixed metal oxides. • ZnO nanorod core was preserved during the shell synthesis. • Optical absorptance revealed visible interval absorption for FeO{sub x} shell samples. • Materials can be suitable for photocatalytic or photovoltaic applications.« less

Cu2O-based solar cells using oxide semiconductors

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0.025)2O3 thin film with a thickness of approximately 60 nm. In addition, a Voc of 0.96 V and an η of 5.4% were obtained in a MgF2/AZO/n-AGMZO/p-Cu2O:Na heterojunction solar cell.

The layered double hydroxide route to Bi-Zn co-doped TiO₂ with high photocatalytic activity under visible light.

PubMed

Benalioua, Bahia; Mansour, Meriem; Bentouami, Abdelhadi; Boury, Bruno; Elandaloussi, El Hadj

2015-05-15

In this work, a co-doped Bi-Zn-TiO₂ photocatalist is synthesized by an original synthesis route of layered double hydroxide followed by heat treatment at 670 °C. After characterization the photocatalyst efficiency is estimated by the photo-discoloration of an anionic dye (indigo carmine) under visible light and compare to TiO₂-P25 as reference material. In this new photocatalyst, anatase and ZnO wurtzite are the only identified crystalline phase, rutile and Bi₂O₃ being undetected. Moreover, the binding energy of Bi determined (XPS analysis) is different from the one of Bi in Bi₂O₃. Compared to TiO₂-P25, the absorption is red shifted (UV-vis DRS) and the Bi-Zn-TiO₂ photocatalyst showed sorption capacity toward indigo carmine higher than that TiO₂-P25. The kinetics of the photo-discoloration is faster with Bi-Zn-TiO₂ than with TiO₂-P25. Indeed, a complete discoloration is obtained after 70 min and 120 min in the presence of Bi-Zn-TiO₂ and TiO₂-P25 respectively. The identification of the responsible species on photo-discoloration was carried out in the presence of different scavengers. The study showed that the first responsible is h(+) specie with a moderate contribution of superoxide anion radical and a minor contribution of the hydroxyl radical. The material showed high stability after five uses with the same rate of photo-discoloration. Copyright © 2015 Elsevier B.V. All rights reserved.

Reversible Heating in Electric Double Layer Capacitors

NASA Astrophysics Data System (ADS)

Janssen, Mathijs; van Roij, René

2017-03-01

A detailed comparison is made between different viewpoints on reversible heating in electric double layer capacitors. We show in the limit of slow charging that a combined Poisson-Nernst-Planck and heat equation, first studied by d'Entremont and Pilon [J. Power Sources 246, 887 (2014), 10.1016/j.jpowsour.2013.08.024], recovers the temperature changes as predicted by the thermodynamic identity of Janssen et al. [Phys. Rev. Lett. 113, 268501 (2014), 10.1103/PhysRevLett.113.268501], and disagrees with the approximative model of Schiffer et al. [J. Power Sources 160, 765 (2006), 10.1016/j.jpowsour.2005.12.070] that predominates the literature. The thermal response to the adiabatic charging of supercapacitors contains information on electric double layer formation that has remained largely unexplored.

Hydroxy double salts loaded with bioactive ions: Synthesis, intercalation mechanisms, and functional performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaassis, Abdessamad Y.A.; Xu, Si-Min; Guan, Shanyue

The intercalation of the anions of diclofenac (Dic), naproxen (Nap), and valproic acid (Val) into three hydroxy double salts (HDSs) has been explored in this work. Experiments were performed with [Co{sub 1.2}Zn{sub 3.8}(OH){sub 8}](NO{sub 3}){sub 2}·2H{sub 2}O (CoZn-NO{sub 3}), [Ni{sub 2}Zn{sub 3}(OH){sub 8}](NO{sub 3}){sub 2}·2H{sub 2}O (NiZn-NO{sub 3}) and [Zn{sub 5}(OH){sub 8}](NO{sub 3}){sub 2}·2H{sub 2}O (Zn-NO{sub 3}). It proved possible to intercalate diclofenac and naproxen into all three HDSs. In contrast, Val could be intercalated into CoZn-NO{sub 3} but when it was reacted with Zn-NO{sub 3} the HDS structure was destroyed, and the product comprised ZnO. Successful intercalation was verifiedmore » by X-ray diffraction, IR spectroscopy, and elemental microanalysis. Molecular dynamics simulations showed the Dic and Nap ions to arrange themselves in an “X” shape in the interlayer space, forming a bilayer. Val was found to adopt a position with its aliphatic groups parallel to the HDS layer, again in a bilayer. In situ time resolved X-ray diffraction experiments revealed that intercalation of Dic and Nap into CoZn-NO{sub 3} and Zn-NO{sub 3} is mechanistically complex, with a number of intermediate phases observed. In contrast, the intercalation of all three guests into NiZn-NO{sub 3} and of Val into CoZn-NO{sub 3} are simple one step reactions proceeding directly from the starting material to the product. The HDS-drug composites were found to have sustained release profiles. - Graphical abstract: Seven new drug intercalates of hydroxy double salts (HDSs) have been prepared and characterised. The intercalation mechanisms have been explored, and the drug release properties of the HDS/drug composites quantified. Display Omitted.« less

Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

NASA Astrophysics Data System (ADS)

Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

2012-09-01

We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

Metal oxide nanostructures for gas detection

NASA Astrophysics Data System (ADS)

Maziarz, Wojciech; Pisarkiewicz, Tadeusz; Rydosz, Artur; Wysocka, Kinga; Czyrnek, Grzegorz

2013-07-01

Currently, most of gas sensors on the market are produced in thin or thick film technologies with the use of ceramic substrates. It is expected that the miniature sensors needed in portable applications will be based on one-dimensional structures due to their low power consumption, fast and stable time response, small dimensions and possibility of embedding in integrated circuit together with signal conditioning electronics. The authors manufactured resistance type gas sensors based on ZnO and WO3 nanostructures. ZnO:Al nanorods with good cristallinity were obtained with electrodeposition method, while ZnO:Al nanofibres with varying diameters were obtained by electrospinning method. The sensors were built as a nanowire network. WO3 films with nanocrystalline surface were manufactured by deposition of a three layer WO3/W/WO3 structure by RF sputtering and successive annealing of the structure in appropriate temperature range. In effect a uniform nanostructurized metal oxide layer was formed. Investigation of sensors characteristics revealed good sensitivity to nitrogen dioxide at temperatures lower than these for conventional conductometric type sensors.

Effect of heat treatment on interfacial and mechanical properties of A6022/A7075/A6022 roll-bonded multi-layer Al alloy sheets

NASA Astrophysics Data System (ADS)

Cha, Joon-Hyeon; Kim, Su-Hyeon; Lee, Yun-Soo; Kim, Hyoung-Wook; Choi, Yoon Suk

2016-09-01

Multi-layered Al alloy sheets can exhibit unique properties by the combination of properties of component materials. A poor corrosion resistance of high strength Al alloys can be complemented by having a protective surface with corrosion resistant Al alloys. Here, a special care should be taken regarding the heat treatment of multi-layered Al alloy sheets because dissimilar Al alloys may exhibit unexpected interfacial reactions upon heat treatment. In the present study, A6022/A7075/A6022 sheets were fabricated by a cold roll-bonding process, and the effect of the heat treatment on the microstructure and mechanical properties was examined. The solution treatment gave rise to the diffusion of Zn, Mg, Cu and Si elements across the core/clad interface. In particular, the pronounced diffusion of Zn, which is a major alloying element (for solid-solution strengthening) of the A7075 core, resulted in a gradual hardness change across the core/clad interface. Mg2Si precipitates and the precipitate free zone were also formed near the interface after the heat treatment. The heat-treated sheet showed high strengths and reasonable elongation without apparent deformation misfit or interfacial delamination during the tensile deformation. The high strength of the sheet was mainly due to the T4 and T6 heat treatment of the A7075 core.

A single-cell analysis platform for electrochemiluminescent detection of platelets adhesion to endothelial cells based on Au@DL-ZnCQDs nanoprobes.

PubMed

Long, Dongping; Shang, Yunfei; Qiu, Youyi; Zhou, Bin; Yang, Peihui

2018-04-15

A novel single-cell analysis platform (SCA) was developed for the investigation of platelets adhesion to single human umbilical vein endothelial cell (HUVEC) via using the adhesion molecule (E-selectin) on the damaged HUVEC as the marker site, and integrating electrochemiluminescence (ECL) with the ultrasensitive Au@DL-ZnCQDs nanoprobes. The Au@DL-ZnCQDs nanocomposite, a kind of double layer zinc-coadsorbed carbon quantum dot (ZnCQDs) core-shell nanoprobe, was firstly constructed by using gold nanoparticles (AuNPs) as the core to load with ZnCQDs and then the citrate-modified silver nanoparticles (AgNPs) as the bridge to link AuNPs-ZnCQDs with ZnCQDs to form the core-shell with double layer ZnCQDs (DL-ZnCQDs) nanoprobe, revealed a 10-fold signal amplification. The H 2 O 2 -induced oxidative damage HUVECs were utilized as the cellular model on which anti-E-selectin functionalized nanoprobes specially recognized E-selectin, the SCA showed that the ECL signals decreased with platelets adhesion to single HUVEC. The proposed SCA could effectively and dynamically monitor the adhesion between single HUVEC and platelets in the absence and presence of collagen activation, moreover, be able to quantitatively detect the number of platelets adhesion to single HUVEC, and show a good analytical performance with linear range from 1 to 15 platelets. In contrast, the HUVEC was down-regulated the expression of adhesion molecules by treating with quercetin inhibitor, and the SCA also exhibited the feasibility for analysis of platelets adhesion to single HUVEC. Therefore, the single-cell analysis platform provided a novel and promising protocol for analysis of the single intercellular adhesion, and it will be beneficial to elucidate the pathogenesis of cardiovascular diseases. Copyright © 2017 Elsevier B.V. All rights reserved.

Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

NASA Astrophysics Data System (ADS)

Fenwick, William Edward

GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen into the subsequent GaN layer was studied in more detail. Several approaches were investigated---for example, transition layers such as Al2O3 and Al xGa1-xN/GaN---to minimize diffusion of these impurities into the GaN layer. Silicon, due to its prevalence, is the most promising material for the development of an inexpensive, large-area substrate technology. The challenge in MOCVD growth of GaN on Si is the tensile strain induced by the lattice and thermal mismatch between GaN and Si and the formation of anti-phase boundaries. Typical approaches to solve these problems involve complicated and multiple buffer layer structures, which lead to relatively slow growth rates. In this work, a thin atomic layer deposition (ALD)-grown Al2O3 interlayer was employed to relieve strain and increase material quality while also simplifying the growth process. While some residual strain was still observed in the GaN material by XRD and PL, the use of this oxide interlayer leads to an improvement in thin film quality as seen by a reduction in both crack density (<1 mm-2) on ALD-Al2O3/Si) and screw dislocation density (from 3x109cm-2 on bare Si to 2x108cm-2 on ALD-Al 2O3/Si) in the GaN films. A side-by-side comparison of GaN-based multiple quantum well LEDs grown on sapphire and on Al2O3/Si shows similar performance characteristic for both device structures. A redshift in peak emission wavelength was also observed on silicon compared to sapphire, and this is attributed to higher indium content due to the slight tensile strain in the layers on silicon. IQE of the devices on silicon is ˜32% as measured by LT-PL, compared to ˜37% on sapphire, but this difference can be assigned to the difference in indium compositions. These results show a great promise toward an inexpensive, large-area, silicon-based substrate technology for MOCVD growth of the next generation of GaN-based optoelectronic devices for SSL and other applications.

Expression and Characterization of Insulin-Like Growth Factor Binding Proteins (IGFBPs) and IGFBP-2 mRNA in the Developing Chicken Eye

DTIC Science & Technology

1995-03-30

family with autosomal dominant retinitis pigmentosa . American Journal of Human Genetics 48: 26-30. Johnston, M.C., Noden, D.M., Hazelton, R. D...create a double-layered optic cup, with the outer layer forming the retinal pigmented epithelium (RPE) and the inner layer forming the neural retina...the lens, sclera, retina and retinal pigmented epithelium (Bassas et 19 al., 1987; Zick et al., 1987; Ocrant et al., 1989; Waldbillig et al. 1990

Infrared metamaterial by RF magnetron sputtered ZnO/Al:ZnO multilayers

NASA Astrophysics Data System (ADS)

Santiago, Kevin C.; Mundle, Rajeh; White, Curtis; Bahoura, Messaoud; Pradhan, Aswini K.

2018-03-01

Hyperbolic metamaterials create artificial anisotropy using metallic wires suspended in dielectric media or alternating layers of a metal and dielectric (Type I or Type II). In this study we fabricated ZnO/Al:ZnO (AZO) multilayers by the RF magnetron sputtering deposition technique. Our fabricated multilayers satisfy the requirements for a type II hyperbolic metamaterial. The optical response of individual AZO and ZnO films, as well as the multilayered film were investigated via UV-vis-IR transmittance and spectroscopic ellipsometry. The optical response of the multilayered system is calculated using the nonlocal-corrected Effective Medium Approximation (EMA). The spectroscopic ellipsometry data of the multilayered system was modeled using a uniaxial material model and EMA model. Both theoretical and experimental studies validate the fabricated multilayers undergo a hyperbolic transition at a wavelength of 2.2 μm. To our knowledge this is the first AZO/ZnO type II hyperbolic metamaterial system fabricated by magnetron sputtering deposition method.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Napari, Mari, E-mail: mari.napari@jyu.fi; Malm, Jari; Lehto, Roope

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{submore » 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.« less

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

Preparation and regulating cell adhesion of anion-exchangeable layered double hydroxide micropatterned arrays.

PubMed

Yao, Feng; Hu, Hao; Xu, Sailong; Huo, Ruijie; Zhao, Zhiping; Zhang, Fazhi; Xu, Fujian

2015-02-25

We describe a reliable preparation of MgAl-layered double hydroxide (MgAl-LDH) micropatterned arrays on gold substrate by combining SO3(-)-terminated self-assembly monolayer and photolithography. The synthesis route is readily extended to prepare LDH arrays on the SO3(-)-terminated polymer-bonded glass substrate amenable for cell imaging. The anion-exchangeable MgAl-LDH micropattern can act both as bioadhesive region for selective cell adhesion and as nanocarrier for drug molecules to regulate cell behaviors. Quantitative analysis of cell adhesion shows that selective HepG2 cell adhesion and spreading are promoted by the micropatterned MgAl-LDH, and also suppressed by methotrexate drug released from the LDH interlayer galleries.

IR-Spectroscopic Study on the Interface of Cu-Based Methanol Synthesis Catalysts: Evidence for the Formation of a ZnO Overlayer

DOE PAGES

Schumann, Julia; Kröhnert, Jutta; Frei, Elias; ...

2017-08-28

Carbon monoxide was applied as probe molecule to compare the surface of a ZnO-containing (Cu/ZnO:Al) and a ZnO-free (Cu/MgO) methanol synthesis catalyst (copper content 70 atomic %) after reduction in hydrogen at 523 K by DRIFT spectroscopy. Nano-structured, mainly metallic copper was detected on the surface of the Cu/MgO catalyst. In contrast, the high energy of the main peak in the spectrum of CO adsorbed on reduced Cu/ZnO:Al (2125 cm -1) proves that metallic copper is largely absent on the surface of this catalyst. The band is assigned to Zn δ+–CO. The presence of not completely reduced Cu δ+–CO speciesmore » cannot be excluded. The results are interpreted in terms of a partial coverage of the copper nano-particles in the Cu/ZnO:Al catalyst by a thin layer of metastable, defective zinc oxide. Minor contributions in the spectrum at 2090 and 2112 cm -1 due to nano-structured Cu 0–CO and CO adsorbed on highly defective Cu 0, respectively, indicate that the coverage of metallic copper is not complete.« less

IR-Spectroscopic Study on the Interface of Cu-Based Methanol Synthesis Catalysts: Evidence for the Formation of a ZnO Overlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schumann, Julia; Kröhnert, Jutta; Frei, Elias

Carbon monoxide was applied as probe molecule to compare the surface of a ZnO-containing (Cu/ZnO:Al) and a ZnO-free (Cu/MgO) methanol synthesis catalyst (copper content 70 atomic %) after reduction in hydrogen at 523 K by DRIFT spectroscopy. Nano-structured, mainly metallic copper was detected on the surface of the Cu/MgO catalyst. In contrast, the high energy of the main peak in the spectrum of CO adsorbed on reduced Cu/ZnO:Al (2125 cm -1) proves that metallic copper is largely absent on the surface of this catalyst. The band is assigned to Zn δ+–CO. The presence of not completely reduced Cu δ+–CO speciesmore » cannot be excluded. The results are interpreted in terms of a partial coverage of the copper nano-particles in the Cu/ZnO:Al catalyst by a thin layer of metastable, defective zinc oxide. Minor contributions in the spectrum at 2090 and 2112 cm -1 due to nano-structured Cu 0–CO and CO adsorbed on highly defective Cu 0, respectively, indicate that the coverage of metallic copper is not complete.« less

20% Efficient Zn0.9Mg0.1O:Al/Zn0.8Mg0.2O/Cu(In,Ga)(S,Se)2 Solar Cell Prepared by All-Dry Process through a Combination of Heat-Light-Soaking and Light-Soaking Processes.

PubMed

Chantana, Jakapan; Kato, Takuya; Sugimoto, Hiroki; Minemoto, Takashi

2018-04-04

Development of Cd-free Cu(In,Ga)(S,Se) 2 (CIGSSe)-based thin-film solar cells fabricated by an all-dry process is intriguing to minimize optical loss at a wavelength shorter than 520 nm owing to absorption of the CdS buffer layer and to be easily integrated into an in-line process for cost reduction. Cd-free CIGSSe solar cells are therefore prepared by the all-dry process with a structure of Zn 0.9 Mg 0.1 O:Al/Zn 0.8 Mg 0.2 O/CIGSSe/Mo/glass. It is demonstrated that Zn 0.8 Mg 0.2 O and Zn 0.9 Mg 0.1 O:Al are appropriate as buffer and transparent conductive oxide layers with large optical band gap energy values of 3.75 and 3.80 eV, respectively. The conversion efficiency (η) of the Cd-free CIGSSe solar cell without K-treatment is consequently increased to 18.1%. To further increase the η, the Cd-free CIGSSe solar cell with K-treatment is next fabricated and followed by posttreatment called the heat-light-soaking (HLS) + light-soaking (LS) process, including HLS at 110 °C followed by LS under AM 1.5G illumination. It is disclosed that the HLS + LS process gives rise to not only the enhancement of carrier density but also the decrease in the carrier recombination rate at the buffer/absorber interface. Ultimately, the η of the Cd-free CIGSSe solar cell with K-treatment prepared by the all-dry process is enhanced to the level of 20.0%.

Reversible Heating in Electric Double Layer Capacitors.

PubMed

Janssen, Mathijs; van Roij, René

2017-03-03

A detailed comparison is made between different viewpoints on reversible heating in electric double layer capacitors. We show in the limit of slow charging that a combined Poisson-Nernst-Planck and heat equation, first studied by d'Entremont and Pilon [J. Power Sources 246, 887 (2014)JPSODZ0378-775310.1016/j.jpowsour.2013.08.024], recovers the temperature changes as predicted by the thermodynamic identity of Janssen et al. [Phys. Rev. Lett. 113, 268501 (2014)PRLTAO0031-900710.1103/PhysRevLett.113.268501], and disagrees with the approximative model of Schiffer et al. [J. Power Sources 160, 765 (2006)JPSODZ0378-775310.1016/j.jpowsour.2005.12.070] that predominates the literature. The thermal response to the adiabatic charging of supercapacitors contains information on electric double layer formation that has remained largely unexplored.

The atomic geometries of GaP(110) and ZnS(110) revisited - A structural ambiguity and its resolution

NASA Technical Reports Server (NTRS)

Duke, C. B.; Paton, A.; Kahn, A.

1984-01-01

The atomic geometries of GaP(110) and ZnS(110) are reexamined using the R-factor minimization procedure, developed for GaAs(110) and previously applied to GaSb(110), ZnTe(110), InAs(110), and AlP(110), to analyze experimental elastic low-energy electron diffraction intensities. Unlike most of the earlier cases, both GaP(110) and ZnS(110) exhibit two distinct minimum-Rx structures which cannot be distinguished by analysis of the shapes of the intensity profiles alone. One region of best-fit structures exhibits top-layer displacements normal to the surface characterized by a small bond-length-conserving, top-layer rotation (omega aproximately 2-3 deg), a small relaxation of the top layer away from the surface, and a 10 percent expansion of the top-layer bond length. The other region of best-fit structures is the conventional one: nearly bond-length-conserving rotations of omega = 26-28 deg in the top layer and a small (approximately 0.1 A) contraction of the uppermost layer spacing. This ambiguity may be removed, however, by consideration of the integrated beam intensities. The conventional region of structural parameters provides a decisively better description of the relative magnitudes of the integrated beam intensities and hence is the preferred structure.

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Band gap modulation of mono and bi-layer hexagonal ZnS under transverse electric field and bi-axial strain: A first principles study

NASA Astrophysics Data System (ADS)

Rai, D. P.; Kaur, Sumandeep; Srivastava, Sunita

2018-02-01

Density functional theory has been employed to study the electronic and mechanical properties of the monolayer and bilayer ZnS. AB stacked ZnS bilayer is found to be energetically more favorable over the AA stacked ZnS bilayer. The electronic bandgap decreases on moving from monolayer to bilayer. Application of positive transverse electric field in AA/AB stacked bilayers leads to a semiconductor to metal transition at 1.10 V/Å. Reversed polarity of electric field, on the other hand, leads to an asymmetric behavior of the bandgap for AB stacking while the behavior of the bandgap in AA stacking is polarity independent. The strong dependency of bandgap on polarity of electric field in AB stacked ZnS bilayer is due to the balancing of external field with the induced internal field which arises due the electronegativity and heterogeneity in the arrangements of atoms. The electronic structure varies with the variation of applied biaxial strain (compression/tensile). We report an increase in band gap in both single and double layers under compression up to -8.0%, which can be attributed to greater superposition of atomic orbitals (Zn-d and S-p hybridization). We expect that our results may stimulate more theoretical and experimental work on hexagonal multi-layers of ZnS employing external field (temperature, pressure, field etc.) for future applications of our present work.

Double-trap model for hysteretic current-voltage characteristics of a polystyrene/ZnO nanorods stacked layer

NASA Astrophysics Data System (ADS)

Wu, You-Lin; Lin, Jing-Jenn; Lin, Shih-Hung; Sung, Yi-Hsing

2017-11-01

Hysteretic current-voltage (I-V) characteristics are quite common in metal-insulator-metal (MIM) devices used for resistive switching random access memory (RRAM). Two types of hysteretic I-V curves are usually observed, figure eight and counter figure eight (counter-clockwise and clockwise in the positive voltage sweep direction, respectively). In this work, a clockwise hysteretic I-V curve was found for an MIM device with polystyrene (PS)/ZnO nanorods stack as an insulator layer. Three distinct regions I ∼ V, I ∼ V2, and I ∼ V0.6 are observed in the double logarithmic plot of the I-V curves, which cannot be explained completely with the conventional trap-controlled space-charge-limited-current (SCLC) model. A model based on the energy band with two separate traps plus local energy variation and trap-controlled SCLC has been developed, which can successfully describe the behavior of the clockwise hysteretic I-V characteristics obtained in this work.

Applied Crystallography - Proceedings of the XVth Conference

NASA Astrophysics Data System (ADS)

Morawiec, H.; Ströż, D.

1993-06-01

The Table of Contents for the full book PDF is as follows: * Foreword * The International Centre for Diffraction Data and Its Future Developments * The Rietveld Method - A Historical Perspective * Real Structure in Quantitative Powder Diffraction Phase Analysis * Neutron Focusing Optics in Applied Crystallography * The Crystal Structures of Oxygen Deficient Rare Earth Oxides * Short-Range Order in Layer-Structured Ba1-xSrxBi2Nb2O9 Ferroelectrics * Radial Distribution Function as a Tool of Structural Studies on Noncrystalline Materials * Determination of Radial Distribution Function (RDF) of Electrodeposited Cu-Cd Alloys After Annealing * Spheres Packing as a Factor Describing the Local Environment and Structure Stability * X-Ray Stress Measurement of Samples Combined with Diffraction Line Analysis * Phase Stability and Martensitic Transformation in Cu-Zn and Cu-Zn-Al Single Crystals * Order, Defects, Precipitates and the Martensitic Transformation in β Cu-Zn-Al * Effect of γ Precipitates on the Martensitic Transformation in Cu-Zn-Al Alloys * Phase Transitions and Shape Memory Effect in a Thermomechanically Treated NiTi Alloy * Structure of Martensite and Bainite in CuAlMn Alloys * Glass-Ceramics * Mechanism of Texture Formation at the Rolling of Low Stacking Fault Energy Metals and Alloys * Shear Texture of Zinc and the Conditions of Its Occuring * The Development of Texture of ZnAlMg Sheets Depending on Deformation Geometry * Texture Stability of the D.S. NiAlMoCrTi Alloy After Heat Treatment * X-Ray Diffraction Method for Controlling of Texture Evolution in Layers * Texture and Lattice Imperfections Study of Some Low Alloyed Copper Alloys * Selected Examples of the Calculation of the Orientation Distribution Function for Low Crystal and Sample Symmetries * Automatical X-Ray Quantitative Phase Analysis * Application of a PC Computer for Crystallographic Calculations * Electron Diffraction Analysis using a Personal Computer * CA.R.INE Crystallography Version 2.1-1992 * PC-MINREF: The Computer Program Package for Neutron Refinement of Incommensurate Multiphase Crystal and Magnetic Structures on IBM PC Computers * Possibilities of Deflections from Stoichiometry Investigation for Phases of b1-b37 Structure by X-Ray Method * A Computer Program: “Measurement of Elastic Constants of Phases in Nontextured Polycrystalline Materials by X-Ray Method” * Crystallite Sizes and Lattice Strains of Hydrogenatid Tungsten Carbid Powder * The Bragg-Case Images of Dislocations at Different Absorption * Extended X-Ray Bremsstrahlung Isochromat of Molybdenum * Size Distribution Determination of Heterogeneity Regions in Electrodeposited Metals by Saxs Method * The Possibility of the Application of the CH2I2 - Paraffin Oil Mixture as a Masking Liquid for Metal/Carrier Systems in Saxs Investigations * Investigation on Mechanical Alloying and Amorphisation Processes by the Rietveld Method * Growth of β' Phase Single Crystals of Sn-Sb Alloy * Effect of Oxygen Agglomeration on Structure of Annealed Cz-Si Single Crystal * X-Ray Investigation of Non-Uniform Stress Fields * Problem of Polytype Structures Series for Martensitic Phases of Metals and Alloys * Structure of Strain-Induced Martensite in β-CuZnAl Alloy * The Effect of Heat Treatment on the Phase Transitions in NiTiCo Shape Memory Alloy * 9R → 18R Phase Transformation in Cu-13Zn-8Al Alloy * Effect of Austenite Thermal Instability on Characteristics of Martensitic Transformation in Fe-Ni Alloys * Vacuum Annealing Study of Thin Ti Layers on High Carbon Steel Substrates * Vacuum Annealing Study of Thin Ta Layers on High Carbon Steel Substrates * Investigation of Speed of Ionic Sputtering of NiTi Alloys in Sea 02 Auger Spectrometer * Effect of Precipitation Hardening on Thermal Stability of Austenite in Fe-Ni Alloys * Structure of 18Cr-25Ni-Nb L Steel After Two Years Operation in Catalytic Tubes * Influence of Magnetic Field on Mechanical Barkhausen Effect Stress Dependence in Steel * Precipitation Structure in High Strength Aluminium Alloys * Morphology of Laser Treated Al-Zn and Al-Fe Alloys * Structure of Rapidly Solidified AlFe and AlFeNi Ribbons After Continuous Heating * X-Ray Diffractometric Investigations of Anatase—Rutile Titanium Dioxide Forms Transformation in the Presence of Some Additives * Investigations on Phase Transformation of Coprecipitated Iron-Magnesium Hydroxides * Determination of the Crystallinity of Polymer Blends by X-Ray Diffraction Method * XPD Study of the Selected Magnesium Compounds with the Expected Pharmacological Activity * Supermolecular Structure of the Nylon 6.10 Crystallized from the Melt and Its Changes During Heating * The Analysis of Substructural Parameters of PZT-Type Ferroelectric Ceramics

In situ fabrication of nickel aluminum-layered double hydroxide nanosheets/hollow carbon nanofibers composite as a novel electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

He, Fang; Hu, Zhibiao; Liu, Kaiyu; Zhang, Shuirong; Liu, Hongtao; Sang, Shangbin

2014-12-01

This paper introduces a new design route to fabricate nickel aluminum-layered double hydroxide (NiAl-LDH) nanosheets/hollow carbon nanofibers (CNFs) composite through an in situ growth method. The NiAl-LDH thin layers which grow on hollow carbon nanofibers have an average thickness of 13.6 nm. The galvanostatic charge-discharge test of the NiAl-LDH/CNFs composite yields an impressive specific capacitance of 1613 F g-1 at 1 A g-1 in 6 M KOH solution, the composite shows a remarkable specific capacitance of 1110 F g-1 even at a high current density of 10 A g-1. Furthermore, the composite remains a specific capacitance of 1406 F g-1 after 1000 cycles at 2 A g-1, indicating the composite has excellent high-current capacitive behavior and good cycle stability in compared to pristine NiAl-LDH.

Use of CdSe/ZnS luminescent quantum dots incorporated within sol-gel matrix for urea detection.

PubMed

Duong, Hong Dinh; Rhee, Jong Il

2008-09-19

In this work, urea detection techniques based on the pH sensitivity of CdSe/ZnS QDs were developed using three types of sol-gel membranes: a QD-entrapped membrane, urease-immobilized membrane and double layer consisting of a QD-entrapped membrane and urease-immobilized membrane. The surface morphology of the sol-gel membranes deposited on the wells in a 24-well microtiter plate was investigated. The linear detection range of urea was in the range of 0-10mM with the three types of sol-gel membranes. The urea detection technique based on the double layer consisting of the QD-entrapped membrane and urease-immobilized membrane resulted in the highest sensitivity to urea due to the Michaelis-Menten kinetic parameters. That is, the Michaelis-Menten constant (K(m)=2.0745mM) of the free urease in the QD-entrapped membrane was about 4-fold higher than that (K(m)=0.549mM) of the immobilized urease in the urease-immobilized membrane and about 12-fold higher than that (K(m)=0.1698mM) of the immobilized urease in the double layer. The good stability of the three sol-gel membranes for urea sensing over 2 months showed that the use of sol-gel membranes immobilized with QDs or an enzyme is suitable for biomedical and environmental applications.

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System

NASA Astrophysics Data System (ADS)

Wang, Lai-Guo; Zhang, Wei; Chen, Yan; Cao, Yan-Qiang; Li, Ai-Dong; Wu, Di

2017-01-01

In this work, a kind of new memristor with the simple structure of Pt/HfOx/ZnOx/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfOx/ZnOx/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 103 cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfOx/ZnOx device, including nonlinear transmission properties, such as long-term plasticity (LTP), short-term plasticity (STP), and spike-timing-dependent plasticity. The transformation from STP to LTP induced by repetitive pulse stimulation is confirmed in Pt/HfOx/ZnOx/TiN memristive device. Above all, simple structure of Pt/HfOx/ZnOx/TiN by ALD technique is a kind of promising memristor device for applications in artificial neural network.

Comment on 'The diatomic dication CuZn{sup 2+} in the gas phase' [J. Chem. Phys. 135, 034306 (2011)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiser, Jiri; Diez, Reinaldo Pis; Franzreb, Klaus

2013-02-21

In this Comment, the density functional theory (DFT) calculations carried out by Diez et al. [J. Chem. Phys. 135, 034306 (2011)] are revised within the framework of the coupled-cluster single double triple method. These more sophisticated calculations allow us to show that the {sup 2}{Sigma}{sup +} electronic ground state of CuZn{sup 2+}, characterized as the metastable ground state by DFT calculations, is a repulsive state instead. The {sup 2}{Delta} and {sup 2}{Pi} metastable states of CuZn{sup 2+}, on the other hand, should be responsible for the formation mechanism of the dication through the near-resonant electron transfer CuZn{sup +}+ Ar{sup +}{yields}more » CuZn{sup 2+}+ Ar reaction.« less

Automated solid-phase extraction of phenolic acids using layered double hydroxide-alumina-polymer disks.

PubMed

Ghani, Milad; Palomino Cabello, Carlos; Saraji, Mohammad; Manuel Estela, Jose; Cerdà, Víctor; Turnes Palomino, Gemma; Maya, Fernando

2018-01-26

The application of layered double hydroxide-Al 2 O 3 -polymer mixed-matrix disks for solid-phase extraction is reported for the first time. Al 2 O 3 is embedded in a polymer matrix followed by an in situ metal-exchange process to obtain a layered double hydroxide-Al 2 O 3 -polymer mixed-matrix disk with excellent flow-through properties. The extraction performance of the prepared disks is evaluated as a proof of concept for the automated extraction using sequential injection analysis of organic acids (p-hydroxybenzoic acid, 3,4-dihydroxybenzoic acid, gallic acid) following an anion-exchange mechanism. After the solid-phase extraction, phenolic acids were quantified by reversed-phase high-performance liquid chromatography with diode-array detection using a core-shell silica-C18 stationary phase and isocratic elution (acetonitrile/0.5% acetic acid in pure water, 5:95, v/v). High sensitivity and reproducibility were obtained with limits of detection in the range of 0.12-0.25 μg/L (sample volume, 4 mL), and relative standard deviations between 2.9 and 3.4% (10 μg/L, n = 6). Enrichment factors of 34-39 were obtained. Layered double hydroxide-Al 2 O 3 -polymer mixed-matrix disks had an average lifetime of 50 extractions. Analyte recoveries ranged from 93 to 96% for grape juice and nonalcoholic beer samples. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extremely flexible, transparent, and strain-sensitive electroluminescent device based on ZnS:Cu-polyvinyl butyral composite and silver nanowires

NASA Astrophysics Data System (ADS)

Jun, Sungwoo; Kim, Youngmin; Ju, Byeong-Kwon; Kim, Jong-Woong

2018-01-01

A multifunctional alternate current electroluminescent device (ACEL) was achieved by compositing ZnS:Cu particles in polyvinyl butyral (PVB) with two layers of percolated silver nanowire (AgNW) electrodes. The strong hydrogen bonding interactions and entanglement of PVB chains considerably strengthened the PVB, and thus, the cured mixture of ZnS:Cu particles and freestanding PVB required no additional support. The device was fabricated by embedding AgNWs on both sides of the ZnS:Cu-PVB composite film using an inverted layer process and intense-pulsed-light treatment. The strong affinity of PVB to the polyvinyl pyrrolidone (PVP) layer, which capped the AgNWs, mechanically stabilized the device to such an extent that it could resist 10,000 bending cycles under a curvature radius of 500 μm. Using AgNW networks in both the top and bottom electrodes made a double-sided light-emitting device that could be applied to wearable lightings or flexible digital signage. The capacitance formed in the device sensitively varied with the applied bending and unfolding, thus demonstrating that the device can also be used as a deformation sensor.

Development of a Post-CMOS Compatible Nanoporous Thin Film layer Based on Al2O3

NASA Astrophysics Data System (ADS)

Dogan, Ö.; Buschhausen, A.; Walk, C.; Mokwa, W.; Vogt, H.

2018-05-01

Porous alumina is a popular material with numerous application fields. A post-CMOS compatible process chain for the fabrication of nanoporous surface based on Al2O3 by atomic layer deposition (ALD) is presented. By alternately applying small numbers of ALD cycles for Al2O3 and ZnO, a homogenous composite was accomplished, for which the principle of island growth of ALD materials at few deposition cycle numbers was utilised. By selective texture-etching of ZnO content via hydrofluoric acid (HF) in vaporous phase at 40 °C and 10.67 mbar, a porous surface of the etch resistant Al2O3 could be achieved. TOF-SIMS investigations verified the composition of ALD composite, whereas AFM and high resolution SEM images characterised the topographies of pre- and post-etched samples. Pores with opening diameters of up to 15 nm could be detected on the surface after vaporous HF treatment for 2 minutes. The amount of pores increased after an etching time of 5 minutes.

Synthesis and anion exchange properties of a Zn/Ni double hydroxide salt with a guarinoite structure

NASA Astrophysics Data System (ADS)

Delorme, F.; Seron, A.; Licheron, M.; Veron, E.; Giovannelli, F.; Beny, C.; Jean-Prost, V.; Martineau, D.

2009-09-01

In this study, the first route to synthesize a compound with the guarinoite structure (Zn,Co,Ni) 6(SO 4)(OH,Cl) 10·5H 2O is reported. Zn/Ni guarinoite is obtained from the reaction of NiSO 4·7H 2O with solid ZnO in aqueous solution. The resulting green Zn/Ni guarinoite ((Zn 3.52Ni 1.63)(SO 4) 1.33(OH 7.64)·4.67H 2O) was characterized by X-ray diffraction, infrared spectrometry, UV-Visible spectrometry and thermal analysis. It is shown that its structure is similar to the one described for the layered Zn sulfate hydroxide hydrate, i.e. brucite layers with {1}/{4} empty octahedra presenting tetrahedrally coordinated divalent atoms above and below the empty octahedra. Ni atoms are located in the octahedra and zinc atoms in tetrahedra and octahedra. In this structure the exchangeable anions are located at the apex of tetrahedra. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations show that the Zn/Ni guarinoite is composed of aggregates of hexagonal plates of several hundreds of nanometers. Due to its interest for industrial or environmental applications, the exchange of sulfate groups by carbonates has been investigated. Results show a limited exchange and a higher affinity of the Zn/Ni guarinoite for sulfates compared to carbonates.

Al2O3 and TiO2 atomic layer deposition on copper for water corrosion resistance.

PubMed

Abdulagatov, A I; Yan, Y; Cooper, J R; Zhang, Y; Gibbs, Z M; Cavanagh, A S; Yang, R G; Lee, Y C; George, S M

2011-12-01

Al(2)O(3) and TiO(2) atomic layer deposition (ALD) were employed to develop an ultrathin barrier film on copper to prevent water corrosion. The strategy was to utilize Al(2)O(3) ALD as a pinhole-free barrier and to protect the Al(2)O(3) ALD using TiO(2) ALD. An initial set of experiments was performed at 177 °C to establish that Al(2)O(3) ALD could nucleate on copper and produce a high-quality Al(2)O(3) film. In situ quartz crystal microbalance (QCM) measurements verified that Al(2)O(3) ALD nucleated and grew efficiently on copper-plated quartz crystals at 177 °C using trimethylaluminum (TMA) and water as the reactants. An electroplating technique also established that the Al(2)O(3) ALD films had a low defect density. A second set of experiments was performed for ALD at 120 °C to study the ability of ALD films to prevent copper corrosion. These experiments revealed that an Al(2)O(3) ALD film alone was insufficient to prevent copper corrosion because of the dissolution of the Al(2)O(3) film in water. Subsequently, TiO(2) ALD was explored on copper at 120 °C using TiCl(4) and water as the reactants. The resulting TiO(2) films also did not prevent the water corrosion of copper. Fortunately, Al(2)O(3) films with a TiO(2) capping layer were much more resilient to dissolution in water and prevented the water corrosion of copper. Optical microscopy images revealed that TiO(2) capping layers as thin as 200 Å on Al(2)O(3) adhesion layers could prevent copper corrosion in water at 90 °C for ~80 days. In contrast, the copper corroded almost immediately in water at 90 °C for Al(2)O(3) and ZnO films by themselves on copper. Ellipsometer measurements revealed that Al(2)O(3) films with a thickness of ~200 Å and ZnO films with a thickness of ~250 Å dissolved in water at 90 °C in ~10 days. In contrast, the ellipsometer measurements confirmed that the TiO(2) capping layers with thicknesses of ~200 Å on the Al(2)O(3) adhesion layers protected the copper for ~80 days in water at 90 °C. The TiO(2) ALD coatings were also hydrophilic and facilitated H(2)O wetting to copper wire mesh substrates. © 2011 American Chemical Society

Effective self-purification of polynary metal electroplating wastewaters through formation of layered double hydroxides.

PubMed

Zhou, Ji Zhi; Wu, Yue Ying; Liu, Chong; Orpe, Ajay; Liu, Qiang; Xu, Zhi Ping; Qian, Guang Ren; Qiao, Shi Zhang

2010-12-01

Heavy metal ions (Ni(2+), Zn(2+), and Cr(3+)) can be effectively removed from real polynary metal ions-bearing electroplating wastewaters by a carbonation process, with ∼99% of metal ions removed in most cases. The synchronous formation of layered double hydroxide (LDH) precipitates containing these metal ions was responsible for the self-purification of wastewaters. The constituents of formed polynary metals-LDHs mainly depended on the Ni(2+):Zn(2+):Cr(3+) molar ratio in wastewaters. LDH was formed at pH of 6.0-8.0 when the Ni(2+)/Zn(2+) molar ratio ≥ 1 where molar fraction of trivalent metal in the wastewaters was 0.2-0.4, otherwise ZnO, hydrozincite, or amorphous precipitate was observed. In the case of LDH formation, the residual concentration of Ni(2+), Zn(2+), and Cr(3+) in the treated wastewaters was very low, about 2-3, ∼2, and ∼1 mg/L, respectively, at 20-80 °C and pH of 6.0-8.0, indicating the effective incorporation of heavy metal ions into the LDH matrix. Furthermore, the obtained LDH materials were used to adsorb azoic dye GR, with the maximum adsorption amount of 129-134 mg/g. We also found that the obtained LDHs catalyzed more than 65% toluene to decompose at 350 °C under ambient pressure. Thus the current research has not only shown effective recovery of heavy metal ions from the electroplating wastewaters in an environmentally friendly process but also demonstrated the potential utilization of recovered materials.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Relationship between the p-n junction position and the threshold current of stripe lasers emitting in the 1.3-μm range

NASA Astrophysics Data System (ADS)

Walachová, J.; Zelinka, J.

1988-11-01

The method of profiling with a probe was used to determine the p-n junction position in the active layer InP/GaInAsP double heterostructure lasers designed for operation in the region of 1.3 μm. Double heterostructures with different Zn concentrations in the upper GaInAsP layer were investigated. An explanation was provided of the shift or lack of shift of the p-n junction in different heterostructure lasers. The average threshold current was correlated with the p-n junction position.

Pulsed laser deposition of functionalized Mg-Al layered double hydroxide thin films

NASA Astrophysics Data System (ADS)

Vlad, A.; Birjega, R.; Tirca, I.; Matei, A.; Mardare, C. C.; Hassel, A. W.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.

2018-02-01

In this paper, magnesium-aluminium layered double hydroxide (LDH) has been functionalized with sodium dodecyl sulfate (DS) and deposited as thin film by pulsed laser deposition (PLD). Mg, Al-LDH powders were prepared by co-precipitation and used as reference material. Intercalation of DS as an anionic surfactant into the LDHs host layers has been prepared in two ways: co-precipitation (P) and reconstruction (R). DS intercalation occurred in LDH powder via both preparation methods. The films deposited via PLD, in particular at 532 and 1064 nm, preserve the organic intercalated layered structure of the targets prepared from these powders. The results reveal the ability of proposed deposition technique to produce functional composite organo-modified LDHs thin films.

Oxides for sustainable photovoltaics with earth-abundant materials

NASA Astrophysics Data System (ADS)

Wagner, Alexander; Stahl, Mathieu; Ehrhardt, Nikolai; Fahl, Andreas; Ledig, Johannes; Waag, Andreas; Bakin, Andrey

2014-03-01

Energy conversion technologies are aiming to extremely high power capacities per year. Nontoxicity and abundance of the materials are the key requirements to a sustainable photovoltaic technology. Oxides are among the key materials to reach these goals. We investigate the influence of thin buffer layers on the performance of an ZnO:Al/buffer/Cu2O solar cells. Introduction of a thin ZnO or Al2O3 buffer layer, grown by thermal ALD, between ZnO:Al and Cu2O resulted in 45% increase of the solar cell efficiency. VPE growth of Cu2O employing elemental copper and pure oxygen as precursor materials is presented. The growth is performed on MgO substrates with the (001) orientation. On- and off- oriented substrates have been employed and the growth results are compared. XRD investigations show the growth of the (110) oriented Cu2O for all temperatures, whereas at a high substrate temperature additional (001) Cu2O growth occurs. An increase of the oxygen partial pressure leads to a more pronounced 2D growth mode, whereby pores between the islands still remain. The implementation of off-axis substrates with 3.5° and 5° does not lead to an improvement of the layer quality. The (110) orientation remains predominant, the grain size decreases and the FWHM of the (220) peak increases. From the AFM images it is concluded, that the (110) surface grows with a tilt angle to the substrate surface.

Structure of bayerite-based lithium-aluminum layered double hydroxides (LDHs): observation of monoclinic symmetry.

PubMed

Britto, Sylvia; Kamath, P Vishnu

2009-12-21

The double hydroxides of Li with Al, obtained by the imbibition of Li salts into bayerite and gibbsite-Al(OH)(3), are not different polytypes of the same symmetry but actually crystallize in two different symmetries. The bayerite-derived double hydroxides crystallize with monoclinic symmetry, while the gibbsite-derived hydroxides crystallize with hexagonal symmetry. Successive metal hydroxide layers in the bayerite-derived LDHs are translated by the vector ( approximately -1/3, 0, 1) with respect to each other. The exigency of hydrogen bonding drives the intercalated Cl(-) ion to a site with 2-fold coordination, whereas the intercalated water occupies a site with 6-fold coordination having a pseudotrigonal prismatic symmetry. The nonideal nature of the interlayer sites has implications for the observed selectivity of Li-Al LDHs toward anions of different symmetries.

Designing the Color of Hot-Dip Galvanized Steel Sheet Through Destructive Light Interference Using a Zn-Ti Liquid Metallic Bath

NASA Astrophysics Data System (ADS)

Levai, Gabor; Godzsák, Melinda; Török, Tamas I.; Hakl, Jozsef; Takáts, Viktor; Csik, Attila; Vad, Kalman; Kaptay, George

2016-07-01

The color of hot-dip galvanized steel sheet was adjusted in a reproducible way using a liquid Zn-Ti metallic bath, air atmosphere, and controlling the bath temperature as the only experimental parameter. Coloring was found only for samples cooled in air and dipped into Ti-containing liquid Zn. For samples dipped into a 0.15 wt pct Ti-containing Zn bath, the color remained metallic (gray) below a 792 K (519 °C) bath temperature; it was yellow at 814 K ± 22 K (541 °C ± 22 °C), violet at 847 K ± 10 K (574 °C ± 10 °C), and blue at 873 K ± 15 K (600 °C ± 15 °C). With the increasing bath temperature, the thickness of the adhered Zn-Ti layer gradually decreased from 52 to 32 micrometers, while the thickness of the outer TiO2 layer gradually increased from 24 to 69 nm. Due to small Al contamination of the Zn bath, a thin (around 2 nm) alumina-rich layer is found between the outer TiO2 layer and the inner macroscopic Zn layer. It is proven that the color change was governed by the formation of thin outer TiO2 layer; different colors appear depending on the thickness of this layer, mostly due to the destructive interference of visible light on this transparent nano-layer. A complex model was built to explain the results using known relationships of chemical thermodynamics, adhesion, heat flow, kinetics of chemical reactions, diffusion, and optics. The complex model was able to reproduce the observations and allowed making predictions on the color of the hot-dip galvanized steel sample, as a function of the following experimental parameters: temperature and Ti content of the Zn bath, oxygen content, pressure, temperature and flow rate of the cooling gas, dimensions of the steel sheet, velocity of dipping the steel sheet into the Zn-Ti bath, residence time of the steel sheet within the bath, and the velocity of its removal from the bath. These relationships will be valuable for planning further experiments and technologies on color hot-dip galvanization of steel by Zn-Ti alloys.

Transparent capacitors with hybrid ZnO:Al and Ag nanowires as electrodes.

PubMed

Zhang, Guozhen; Wu, Hao; Wang, Xiao; Wang, Ti; Liu, Chang

2016-03-11

Transparent conducting films with a composite structure of AlZnO-Ag nanowires (AgNWs) have been prepared by atomic layer deposition. The sheet resistance was reduced from 120 to 9 Ω when the AgNW networks were involved. Transparent capacitors with Al2O3-TiO2-Al2O3 dielectrics were fabricated on the composite electrodes and demonstrated a capacitance density of 10.1 fF μm(-2), which was significantly higher than that of capacitors with AlZnO electrodes (8.8 fF μm(-1)). The capacitance density remained almost unchanged in a broad frequency range from 3 kHz to 1 MHz. Moreover, a low leakage current density of 2.4 × 10(-7) A cm(-2) at 1 V was achieved. Transparent and flexible capacitors were also fabricated using the composite electrodes, and demonstrated an improved bendability. The transparent capacitors showed an average optical transmittance over 70% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

Thermally evaporated Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, K.; Gunawan, O.; Todorov, T.; Shin, B.; Chey, S. J.; Bojarczuk, N. A.; Mitzi, D.; Guha, S.

2010-10-01

High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1 μm and annealing times in the minutes. Detailed electrical analysis of the devices indicate that the performance of the devices is limited by high series resistance, a "double diode" behavior of the current voltage characteristics, and an open circuit voltage that is limited by a carrier recombination process with an activation energy below the band gap of the material.

A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

NASA Astrophysics Data System (ADS)

Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao

2017-08-01

In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range

NASA Astrophysics Data System (ADS)

Usikov, Alexander S.; Shapvalova, Elizaveta V.; Melnik, Yuri V.; Ivantsov, Vladimir A.; Dmitriev, Vladimir A.; Collins, Charles J.; Sampath, Anand V.; Garrett, Gregory A.; Shen, Paul H.; Wraback, Michael

2004-12-01

In this paper we report on the fabrication and characterization of GaN, AlGaN, and AlN layers grown by hydride vapor phase epitaxy (HVPE). The layers were grown on 2-inch and 4-inch sapphire and 2-inch silicon carbide substrates. Thickness of the GaN layers was varied from 2 to 80 microns. Surface roughness, Rms, for the smoothest GaN layers was less than 0.5 nm, as measured by AFM using 10 μm x 10 μm scans. Background Nd-Na concentration for undoped GaN layers was less than 1x1016 cm-3. For n-type GaN layers doped with Si, concentration Nd-Na was controlled from 1016 to 1019 cm-3. P-type GaN layers were fabricated using Mg doping with concentration Na-Nd ranging from 4x1016 to 3x1018 cm-3, for various samples. Zn doping also resulted in p-type GaN formation with concnetration ND-NA in the 1017 cm-3 range. UV transmission, photoluminescence, and crystal structure of AlGaN layers with AlN concentration up to 85 mole.% were studied. Dependence of optical band gap on AlGaN alloy composition was measured for the whole composition range. Thick (up to 75 microns) crack-free AlN layers were grown on SiC substrates. Etch pit density for such thick AlN layers was in the 107 cm-2 range.

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

PubMed

Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

2016-02-10

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion

PubMed Central

2012-01-01

Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 1012 to 3 × 1013 ions/cm2. The effect of irradiation on the composite structure was investigated by scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence spectroscopy. Current–voltage characteristics of ZnO-PS heterojunctions were also measured. As compared to the granular crystallites of zinc oxide layer, Al-doped zinc oxide (ZnO) layer showed a flaky structure. The PL spectrum of the pristine composite structure consists of the emission from the ZnO layer as well as the near-infrared emission from the PS substrate. Due to an increase in the number of deep-level defects, possibly oxygen vacancies after swift ion irradiation, PS-Al-doped ZnO nanocomposites formed with high-porosity PS are shown to demonstrate a broadening in the PL emission band, leading to the white light emission. The broadening effect is found to increase with an increase in the ion fluence and porosity. XRD study revealed the relative resistance of the film against the irradiation, i.e., the irradiation of the structure failed to completely amorphize the structure, suggesting its possible application in optoelectronics and sensing applications under harsh radiation conditions. PMID:22748164

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Cu mesh for flexible transparent conductive electrodes.

PubMed

Kim, Won-Kyung; Lee, Seunghun; Hee Lee, Duck; Hee Park, In; Seong Bae, Jong; Woo Lee, Tae; Kim, Ji-Young; Hun Park, Ji; Chan Cho, Yong; Ryong Cho, Chae; Jeong, Se-Young

2015-06-03

Copper electrodes with a micromesh/nanomesh structure were fabricated on a polyimide substrate using UV lithography and wet etching to produce flexible transparent conducting electrodes (TCEs). Well-defined mesh electrodes were realized through the use of high-quality Cu thin films. The films were fabricated using radio-frequency (RF) sputtering with a single-crystal Cu target--a simple but innovative approach that overcame the low oxidation resistance of ordinary Cu. Hybrid Cu mesh electrodes were fabricated by adding a capping layer of either ZnO or Al-doped ZnO. The sheet resistance and the transmittance of the electrode with an Al-doped ZnO capping layer were 6.197 ohm/sq and 90.657%, respectively, and the figure of merit was 60.502 × 10(-3)/ohm, which remained relatively unchanged after thermal annealing at 200 °C and 1,000 cycles of bending. This fabrication technique enables the mass production of large-area flexible TCEs, and the stability and high performance of Cu mesh hybrid electrodes in harsh environments suggests they have strong potential for application in smart displays and solar cells.

Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

PubMed

Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

2017-06-01

Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al 2 O 3 /ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K -1 , 113 and 847 (Ω cm) -1 , and 0.96 and 1.04 W m -1 K -1 , respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi 0.5 Sb 1.5 Te 3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output power of the 100 nm-thick n-AO/ZnO superlattice film/p-BST TE energy generator was determined to be ∼1.0 nW at a temperature difference of 80 K, corresponding to a significant improvement of ∼130% and ∼220% compared to the 100 nm-thick AO/ZnO film/p-BST and n-BT/p-BST film generators, respectively, owing to the enhancement of the TE properties, including the power factor of the superlattice film.

Synthesis and Properties of a Clean and Sustainable Deicing Additive for Asphalt Mixture

PubMed Central

Peng, Chao; Yu, Jianying; Zhao, Zhijie; Dai, Jing; Fu, Jingyi; Zhao, Meiling; Wang, Wei

2015-01-01

A clean and sustainable deicing additive was prepared via the adsorption of acetate anions (Ac-) by magnesium (Mg) and aluminum (Al) calcined layered double hydroxide (Mg/Al-CLDH). Fourier transform infrared spectroscopy spectrums proved that Ac- had intercalated into LDH structure. X-ray diffraction patterns, scanning electron microscopy and transmission electron microscopy images showed that the intercalation spacing and platelet thickness of Mg and Al layered double hydroxide containing Ac- anions (Mg/Al-Ac- LDH) had been enlarged due to substitution of divalent CO3 2- anions by a larger quantity of monovalent Ac– anions. Differential scanning calorimetry tests testified that the insoluble Mg2/Al-Ac- LDH evidently decreased the freeze point (FP) of water to -10.68°C. X-ray photoelectron spectroscopy analyses confirmed that the Ac- were strongly confined by the metal layers of LDHs. FP test of asphalt mixtures confirmed that Mg/Al-Ac- LDHs reduced FP to -5.5°C. Immersion test results indicated that Mg/Al-Ac- LDH had a good deicing durability and Ac- did not released from asphalt mixture. Snow melting observation was conducted further testified that Mg/Al-Ac- LDH melted snow or ice sustainably. PMID:25625279

Synthesis and properties of a clean and sustainable deicing additive for asphalt mixture.

PubMed

Peng, Chao; Yu, Jianying; Zhao, Zhijie; Dai, Jing; Fu, Jingyi; Zhao, Meiling; Wang, Wei

2015-01-01

A clean and sustainable deicing additive was prepared via the adsorption of acetate anions (Ac-) by magnesium (Mg) and aluminum (Al) calcined layered double hydroxide (Mg/Al-CLDH). Fourier transform infrared spectroscopy spectrums proved that Ac- had intercalated into LDH structure. X-ray diffraction patterns, scanning electron microscopy and transmission electron microscopy images showed that the intercalation spacing and platelet thickness of Mg and Al layered double hydroxide containing Ac- anions (Mg/Al-Ac- LDH) had been enlarged due to substitution of divalent CO32- anions by a larger quantity of monovalent Ac- anions. Differential scanning calorimetry tests testified that the insoluble Mg2/Al-Ac- LDH evidently decreased the freeze point (FP) of water to -10.68°C. X-ray photoelectron spectroscopy analyses confirmed that the Ac- were strongly confined by the metal layers of LDHs. FP test of asphalt mixtures confirmed that Mg/Al-Ac- LDHs reduced FP to -5.5°C. Immersion test results indicated that Mg/Al-Ac- LDH had a good deicing durability and Ac- did not released from asphalt mixture. Snow melting observation was conducted further testified that Mg/Al-Ac- LDH melted snow or ice sustainably.

Study of vertical type organic light emitting transistor using ZnO

NASA Astrophysics Data System (ADS)

Iechi, Hiroyuki; Watanabe, Yasuyuki; Kudo, Kazuhiro

2006-04-01

We propose a new type organic light emitting transistor (OLET) combining static induction transistor (SIT) with double hetero junction type organic light emitting diodes (OLED) using n-type zinc oxide (ZnO) films which works as a transparent and electron injection layer. The device characteristics of newly developed OLED and ZnO-SIT showed relatively high luminance of about 500 cd/m2 at 7.6 mA/cm2 and is able to control by gate voltage as low as a few volts, respectively. The crystal structures of the ZnO films as a function of Ar/O II flow ratio and the basic characteristics of the thin film transistor (TFT) and SIT depending on the ZnO sputtering conditions are investigated. The results obtained here show that the OLET using ZnO film is a suitable element for flexible sheet displays.

Layer-by-layer self-assembled two-dimensional MXene/layered double hydroxide composites as cathode for alkaline hybrid batteries

NASA Astrophysics Data System (ADS)

Dong, Xiaowan; Zhang, Yadi; Ding, Bing; Hao, Xiaodong; Dou, Hui; Zhang, Xiaogang

2018-06-01

Multifarious layered materials have received extensive concern in the field of energy storage due to their distinctive two-dimensional (2D) structure. However, the natural tendency to be re-superimposed and the inherent disadvantages of a single 2D material significantly limit their performance. In this work, the delaminated Ti3C2Tx (d-Ti3C2Tx)/cobalt-aluminum layered double hydroxide (Ti3C2Tx/CoAl-LDH) composites are prepared by layer-by-layer self-assembly driven by electrostatic interaction. The alternate Ti3C2Tx and CoAl-LDH layers prevent each other from restacking and the obtained Ti3C2Tx/CoAl-LDH heterostructure combine the advantages of high electron conductivity of Ti3C2Tx and high electrochemical activity of CoAl-LDH, thus effectively improving the electrochemical reactivity of electrode materials and accelerating the kinetics of Faraday reaction. As a consequence, as a cathode for alkaline hybrid battery, the Ti3C2Tx/CoAl-LDH electrode exhibits a high specific capacity of 106 mAh g-1 at a current density of 0.5 A g-1 and excellent rate capability (78% at 10 A g-1), with an excellent cycling stability of 90% retention after 5000 cycles at 4 A g-1. This work provides an alternative route to design advanced 2D electrode materials, thus exploiting their full potentials for alkaline hybrid batteries.

Exploration of Al-Doped ZnO in Photovoltaic Thin Films

NASA Astrophysics Data System (ADS)

Ciccarino, Christopher; Sahiner, M. Alper

The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

Tribological Properties of TiO2/SiO2 Double Layer Coatings Deposited on CP-Ti

NASA Astrophysics Data System (ADS)

Çomakli, O.; Yazici, M.; Yetim, T.; Yetim, A. F.; Çelik, A.

In the present paper, the influences of different double layer on wear and scratch performances of commercially pure Titanium (CP-Ti) were investigated. TiO2/SiO2 and SiO2/TiO2 double layer coatings were deposited on CP-Ti by sol-gel dip coating process and calcined at 750∘C. The phase structure, cross-sectional morphology, composition, wear track morphologies, adhesion properties, hardness and roughness of uncoated and coated samples were characterized with X-ray diffraction, scanning electron microscopy (SEM), nano-indentation technique, scratch tester and 3D profilometer. Also, the tribological performances of all samples were investigated by a pin-on-disc tribo-tester against Al2O3 ball. Results showed that hardness, elastic modulus and adhesion resistance of double layer coated samples were higher than untreated CP-Ti. It was found that these properties of TiO2/SiO2 double layer coatings have higher than SiO2/TiO2 double layer coating. Additionally, the lowest friction coefficient and wear rates were obtained from TiO2/SiO2 double layer coatings. Therefore, it was seen that phase structure, hardness and film adhesion are important factors on the tribological properties of double layer coatings.

Studies on graphene zinc-oxide nanocomposites photoanodes for high-efficient dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Effendi, N. A. S.; Samsi, N. S.; Zawawi, S. A.; Hassan, O. H.; Zakaria, R.; Yahya, M. Z. A.; Ali, A. M. M.

2017-09-01

A dye-sensitized solar cells (DSSCs) using a nanocomposite (NC) semiconductor film, consisting of graphene layer and ZnO nanosheets (Gr-ZnO) is fabricated by electrodeposition process. The DSSCs based on Gr-ZnO NC were determined via electrochemical impedance spectra (EIS), UV-Visible diffused reflectance spectroscopy (UV-Vis), and photovoltaic performances J-V curves to substantiate the explanations. Impedance spectra shows that a smaller charge transport time constant occurs in DSSCs based on Gr-ZnO NC comparing to ZnO. This improved the electron collecting efficiency significantly, resulting in high open circuit voltage. Moreover, Gr-ZnO NC shows an efficient photoinduced charge separation and transportation can be achieved at the interface thus exhibit excellent potential for photocurrent generation compared with sole ZnO. Gr-ZnO NC obtained a maximum photocurrent response for an open-circuit voltage and a power conversion efficiency of 0.96 V and 7.01% respectively, which is doubled from sole ZnO. The fabricated Gr-ZnO NC cells show better performances compared to conventional ZnO structure reference cell.

Transformation of zinc hydroxide chloride monohydrate to crystalline zinc oxide.

PubMed

Moezzi, Amir; Cortie, Michael; McDonagh, Andrew

2016-04-25

Thermal decomposition of layered zinc hydroxide double salts provides an interesting alternative synthesis for particles of zinc oxide. Here, we examine the sequence of changes occurring as zinc hydroxide chloride monohydrate (Zn5(OH)8Cl2·H2O) is converted to crystalline ZnO by thermal decomposition. The specific surface area of the resultant ZnO measured by BET was 1.3 m(2) g(-1). A complicating and important factor in this process is that the thermal decomposition of zinc hydroxide chloride is also accompanied by the formation of volatile zinc-containing species under certain conditions. We show that this volatile compound is anhydrous ZnCl2 and its formation is moisture dependent. Therefore, control of atmospheric moisture is an important consideration that affects the overall efficiency of ZnO production by this process.

Electrofluidic gating of a chemically reactive surface.

PubMed

Jiang, Zhijun; Stein, Derek

2010-06-01

We consider the influence of an electric field applied normal to the electric double layer at a chemically reactive surface. Our goal is to elucidate how surface chemistry affects the potential for field-effect control over micro- and nanofluidic systems, which we call electrofluidic gating. The charging of a metal-oxide-electrolyte (MOE) capacitor is first modeled analytically. We apply the Poisson-Boltzmann description of the double layer and impose chemical equilibrium between the ionizable surface groups and the solution at the solid-liquid interface. The chemically reactive surface is predicted to behave as a buffer, regulating the charge in the double layer by either protonating or deprotonating in response to the applied field. We present the dependence of the charge density and the electrochemical potential of the double layer on the applied field, the density, and the dissociation constants of ionizable surface groups and the ionic strength and the pH of the electrolyte. We simulate the responses of SiO(2) and Al(2)O(3), two widely used oxide insulators with different surface chemistries. We also consider the limits to electrofluidic gating imposed by the nonlinear behavior of the double layer and the dielectric strength of oxide materials, which were measured for SiO(2) and Al(2)O(3) films in MOE configurations. Our results clarify the response of chemically reactive surfaces to applied fields, which is crucial to understanding electrofluidic effects in real devices.

Three-dimensional SnO2@TiO2 double-shell nanotubes on carbon cloth as a flexible anode for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Zhang, Haifeng; Ren, Weina; Cheng, Chuanwei

2015-07-01

In this study, three-dimensional SnO2@TiO2 double-shell nanotubes on carbon cloth are synthesized by a combination of the hydrothermal method for ZnO nanorods and a subsequent SnO2 and TiO2 thin film coating with atomic layer deposition (ALD). The as-prepared SnO2@TiO2 double-shell nanotubes are further tested as a flexible anode for Li ion batteries. The SnO2@TiO2 double-shell nanotubes/carbon cloth electrode exhibited a high initial discharge capacity (e.g. 778.8 mA h g-1 at a high current density of 780 mA g-1) and good cycling performance, which could be attributed to the 3D double-layer nanotube structure. The interior space of the stable TiO2 hollow tube can accommodate the large internal stress caused by volume expansion of SnO2 and protect SnO2 from pulverization and exfoliation.

Electrochemical immunosensor with NiAl-layered double hydroxide/graphene nanocomposites and hollow gold nanospheres double-assisted signal amplification.

PubMed

Qiao, Lu; Guo, Yemin; Sun, Xia; Jiao, Yancui; Wang, Xiangyou

2015-08-01

A sensitive electrochemical immunosensor based on NiAl-layered double hydroxide/graphene nanocomposites (NiAl-LDH/G) and hollow gold nanospheres (HGNs) was proposed for chlorpyrifos detection. The NiAl-LDH/G was prepared using a conventional coprecipitation process and reduction of the supporting graphene oxide. Subsequently, the nanocomposites were dispersed with chitosan (CS). The NiAl-LDH/G possessed good electrochemical behavior and high binding affinity to the electrode. The high surface areas of HGNs and the vast aminos and hydroxyls of CS provided a platform for the covalently crosslinking of antibody. Under optimal conditions, the immunosensor exhibited a wide linear range from 5 to 150 μg/mL and from 150 to 2 μg/mL, with a detection limit of 0.052 ng/mL. The detection results showed good agreement with standard gas chromatography method. The constructed immunosensor exhibited good reproducibility, high specificity, acceptable stability and regeneration performance, which provided a new promising tool for chlorpyrifos detection in real samples.

Boosted output performance of triboelectric nanogenerator via electric double layer effect

PubMed Central

Chun, Jinsung; Ye, Byeong Uk; Lee, Jae Won; Choi, Dukhyun; Kang, Chong-Yun; Kim, Sang-Woo; Wang, Zhong Lin; Baik, Jeong Min

2016-01-01

For existing triboelectric nanogenerators (TENGs), it is important to explore unique methods to further enhance the output power under realistic environments to speed up their commercialization. We report here a practical TENG composed of three layers, in which the key layer, an electric double layer, is inserted between a top layer, made of Al/polydimethylsiloxane, and a bottom layer, made of Al. The efficient charge separation in the middle layer, based on Volta's electrophorus, results from sequential contact configuration of the TENG and direct electrical connection of the middle layer to the earth. A sustainable and enhanced output performance of 1.22 mA and 46.8 mW cm−2 under low frequency of 3 Hz is produced, giving over 16-fold enhancement in output power and corresponding to energy conversion efficiency of 22.4%. Finally, a portable power-supplying system, which provides enough d.c. power for charging a smart watch or phone battery, is also successfully developed. PMID:27703165

EDITORIAL: Oxide semiconductors

NASA Astrophysics Data System (ADS)

Kawasaki, M.; Makino, T.

2005-04-01

Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal non-equilibrium growth has rekindled the recent extensive investigation and progress in the field of ZnO epitaxy. In this special issue, Ohtomo and Tsukazaki, Cho et al, and Yi et al, respectively, describe the various fabrication processes such as pulsed laser deposition, molecular-beam epitaxy and metal-organic chemical vapour deposition. It should be noted that the last work among the above-mentioned papers has the potential to pave the way to nano-technology based on ZnO. This material has found other important applications as well, such as transparent conducting oxides (TCO). This field has a long research history, as is reviewed by Minami. Relatively speaking, ZnO was one of the earliest crystals (after Si, Ge, and InSb) to be prepared in a pure form, and the resultant long research history has given rise to the availability of large-area substrates. Recent progress in this topic is explained by two representative groups of authors in this field: Nause and Nemeth at Cermet Inc., and Maeda et al at Tokyo Denpa Co. Ltd. In order to overcome the bottleneck of p-type conduction and control the material's properties, a clear understanding of the physical processes in ZnO is necessary. Look et al are known as the first group to report on the growth and properties of p-type ZnO layers with a valid and reasonable set of experimental data (2002 Appl. Phys. Lett. 81 1830). Here, Look contributes a more comprehensive review to this issue. Optical studies on single crystals were conducted and are reviewed here by Meyer et al and Chichibu et al. Band-gap engineering and fabrication of heterojunction or quantum structures are important technological issues. It should be emphasized that by choosing an appropriate set of concentrations (x and y), perfect lattice-matching between MgxZn1-xO and CdyZn1-yO can be attained (Makino T et al 2001 Appl. Phys. Lett. 78 1237). Exciton properties of multiple quantum well structures are reported by Makino et al in this issue. Other than growth of p-type layers, ferromagnetic behaviour in transition-metal doped oxide is also fuelling renewed interest from the spintronic point of view. Since some of the related reports remain controversial, a critical discussion of the magnetic properties of these doped oxides is made by Fukumura et al. Before the observation of electro-luminescence from the ZnO p-n homojunction reported by Tsukazaki et al (2005 Nature Mater. 4 42), the afore-mentioned advantages have been explored and exploited by alternative methods, such as heteroepitaxy in which p-n heterostructures can be obtained by depositing n-type ZnO films on other p-type oxides while still utilizing ZnO as their active layer. Researchers in Hosono's group observed the high-intensity band-edge emission from such heterostructures for the first time (Ohta H et al 2000 Appl. Phys. Lett. 77 475). They have also successfully extended their research fields to the development of a transparent oxide transistor based on homologous compounds, which is reviewed by Kamiya and Hosono in this special issue. As can be seen from these demonstrations, the advantage of oxides is, of course, based on the fact that many elements in the periodic table can form compounds with oxygen. Since the discovery of high-temperature superconductors, these multi-component oxides have exploited the new field known as the science of strongly correlated-electron materials, whose recent progress is reviewed by Inoue. Although the collection of papers included in this special issue covers a good cross-section of the development of oxide semiconductors and correlated-electron oxides to date, this is not meant to be exhaustive. There are a number of unavoidable omissions, such as theoretical studies except for some theoretical predictions on the room-temperature Bose-Einstein condensation of exciton-polaritons found in the article by Chichibu et al. We hope this issue promotes further development of this exciting field. The guest editors would like to thank the publishing team of Semiconductor Science and Technology at IoPP (Claire Bedrock, Barbara Bostock, Chris Hall, and Julie Stott).

One-pot synthesis of carbon supported calcined-Mg/Al layered double hydroxides for antibiotic removal by slow pyrolysis of biomass waste

PubMed Central

Tan, Xiaofei; Liu, Shaobo; Liu, Yunguo; Gu, Yanling; Zeng, Guangming; Cai, Xiaoxi; Yan, ZhiLi; Yang, Chunping; Hu, Xinjiang; Chen, Bo

2016-01-01

A biochar supported calcined-Mg/Al layered double hydroxides composite (CLDHs/BC) was synthesized by a one-pot slow pyrolysis of LDHs preloaded bagasse biomass. Multiple characterizations of the product illustrated that the calcined-Mg/Al layered double hydroxides (CLDHs) were successfully coated onto the biochar in slow pyrolysis of pre-treated biomass. The as-synthesized CLDHs/BC could efficiently remove antibiotic tetracycline from aqueous solutions. The coating of CLDHs significantly increased the adsorption ability of biochar, and CLDHs/BC exhibited more than 2 times higher adsorption capacity than that of the pristine biochar (BC) in the tested pH range. The maximum adsorption capacity of CLDHs/BC for tetracycline was 1118.12 mg/g at 318 K. The experimental results suggested that the interaction with LDHs on biochar played a dominant role in tetracycline adsorption, accompanied with π–π interaction and hydrogen bond. This study provides a feasible and simple approach for the preparation of high-performance material for antibiotics contaminated wastewater treatment in a cost-effective way. PMID:28000759

One-pot synthesis of carbon supported calcined-Mg/Al layered double hydroxides for antibiotic removal by slow pyrolysis of biomass waste

NASA Astrophysics Data System (ADS)

Tan, Xiaofei; Liu, Shaobo; Liu, Yunguo; Gu, Yanling; Zeng, Guangming; Cai, Xiaoxi; Yan, Zhili; Yang, Chunping; Hu, Xinjiang; Chen, Bo

2016-12-01

A biochar supported calcined-Mg/Al layered double hydroxides composite (CLDHs/BC) was synthesized by a one-pot slow pyrolysis of LDHs preloaded bagasse biomass. Multiple characterizations of the product illustrated that the calcined-Mg/Al layered double hydroxides (CLDHs) were successfully coated onto the biochar in slow pyrolysis of pre-treated biomass. The as-synthesized CLDHs/BC could efficiently remove antibiotic tetracycline from aqueous solutions. The coating of CLDHs significantly increased the adsorption ability of biochar, and CLDHs/BC exhibited more than 2 times higher adsorption capacity than that of the pristine biochar (BC) in the tested pH range. The maximum adsorption capacity of CLDHs/BC for tetracycline was 1118.12 mg/g at 318 K. The experimental results suggested that the interaction with LDHs on biochar played a dominant role in tetracycline adsorption, accompanied with π-π interaction and hydrogen bond. This study provides a feasible and simple approach for the preparation of high-performance material for antibiotics contaminated wastewater treatment in a cost-effective way.

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

PubMed

Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

2015-10-14

Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)<10(-6) g m(-2) day(-1)) as well as the defect-free nature of the ALD dielectric and ZnO channel layers, the TFTs exhibit excellent device performance with high stability and flexibility: field-effect mobility>20 cm2 V(-1) s(-1), subthreshold swing<0.4 V decade(-1) after extended bias-stressing (>10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

Highly efficient organic light-emitting diodes with a quantum dot interfacial layer.

PubMed

Ryu, Seung Yoon; Hwang, Byoung Har; Park, Ki Wan; Hwang, Hyeon Seok; Sung, Jin Woo; Baik, Hong Koo; Lee, Chang Ho; Song, Seung Yong; Lee, Jun Yeob

2009-02-11

Advanced organic light-emitting diodes (OLEDs), based on a multiple structure, were achieved in combination with a quantum dot (QD) interfacial layer. The authors used core/shell CdSe/ZnS QDs passivated with trioctylphosphine oxide (TOPO) and TOPO-free QDs as interlayers. Multiple-structure OLEDs (MOLEDs) with TOPO-free QDs showed higher device efficiency because of a well-defined interfacial monolayer formation. Additionally, the three-unit MOLED showed high performance for device efficiency with double-structured QD interfacial layers due to the enhanced charge balance and recombination probability.

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

NASA Astrophysics Data System (ADS)

Yang, W. F.; Liu, Z. G.; Xie, Y. N.; Cai, J. F.; Liu, S.; Gong, H.; Wu, Z. Y.

2012-06-01

This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs.

Syntheses and crystal structures of two new hydrated borates, Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] and Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Xuean; Zhao Yinghua; Chang Xinan

Two new hydrated borates, Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] and Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O, have been prepared by hydrothermal reactions at 170 {sup o}C. Single-crystal X-ray structural analyses showed that Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] crystallizes in a non-centrosymmetric space group R32 with a=8.006(2) A, c=17.751(2) A, Z=3 and Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O in a triclinic space group P1-bar with a=6.656(2) A, b=6.714(2) A, c=10.701(2) A, {alpha}=99.07(2){sup o}, {beta}=93.67(2){sup o}, {gamma}=118.87(1){sup o}, Z=2. Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] represents a new structure type in which Zn-centered tetrahedra are connected via common vertices leading to helical ribbons {submore » {infinity}} {sup 1}[Zn{sub 8}O{sub 15}(OH){sub 3}]{sup 17-} that pack side by side and are further condensed through sharing oxygen atoms to form a three-dimensional {sub {infinity}} {sup 3}[Zn{sub 8}O{sub 11}(OH){sub 3}]{sup 9-} framework. The boron atoms are incorporated into the channels in the framework to complete the final structure. Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O is a layered compound containing double ring [B{sub 5}O{sub 8}(OH)]{sup 2-} building units that share exocyclic oxygen atoms to form a two-dimensional layer. Symmetry-center-related layers are stacked along the c-axis and held together by interlayer Pb{sup 2+} ions and water molecules via electrostatic and hydrogen bonding interactions. The IR spectra further confirmed the existence of both triangular BO{sub 3} and OH groups in Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}], and BO{sub 3}, BO{sub 4}, OH groups as well as guest water molecules in Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O. -- Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] represents a new structure type in which Zn-centered tetrahedra are connected via common vertices to form a three-dimensional framework. The boron atoms are incorporated into the channels in the framework to strengen the structure via B-O bonds. Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O is a new layered material containing double ring [B{sub 5}O{sub 8}(OH)]{sup 2-} building units that share exocyclic oxygen atoms to form a two-dimensional layer.« less

Influence of Gas Atmosphere Dew Point on the Galvannealing of CMnSi TRIP Steel

NASA Astrophysics Data System (ADS)

Cho, Lawrence; Kim, Myung Soo; Kim, Young Ha; De Cooman, Bruno C.

2013-11-01

The Fe-Zn reaction occurring during the galvannealing of a Si-bearing transformation-induced plasticity (TRIP) steel was investigated by field-emission electron probe microanalysis and field-emission transmission electron microscopy. The galvannealing was simulated after hot dipping in a Zn bath containing 0.13 mass pct Al at 733 K (460 °C). The galvannealing temperature was in the range of 813 K to 843 K (540 °C to 570 °C). The kinetics and mechanism of the galvannealing reaction were strongly influenced by the gas atmosphere dew point (DP). After the galvannealing of a panel annealed in a N2+10 pct H2 gas atmosphere with low DPs [213 K and 243 K (-60 °C and -30 °C)], the coating layer consisted of δ (FeZn10) and η (Zn) phase crystals. The Mn-Si compound oxides formed during intercritical annealing were present mostly at the steel/coating interface after the galvannealing. Galvannealing of a panel annealed in higher DP [263 K and 273 K, and 278 K (-10 °C, 0 °C, and +5 °C)] gas atmospheres resulted in a coating layer consisting of δ and Г (Fe3Zn10) phase crystals, and a thin layer of Г 1 (Fe11Zn40) phase crystals at the steel/coating interface. The Mn-Si oxides were distributed homogeneously throughout the galvannealed (GA) coating layer. When the surface oxide layer thickness on panels annealed in a high DP gas atmosphere was reduced, the Fe content at the GA coating surface increased. Annealing in a higher DP gas atmosphere improved the coating quality of the GA panels because a thinner layer of oxides was formed. A high DP atmosphere can therefore significantly contribute to the suppression of Zn-alloy coating defects on CMnSi TRIP steel processed in hot dip galvanizing lines.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Mixed metal oxides for dye-sensitized solar cell using zinc titanium layered double hydroxide as precursor

NASA Astrophysics Data System (ADS)

Liu, Jianqiang; Qin, Yaowei; Zhang, Liangji; Xiao, Hongdi; Song, Jianye; Liu, Dehe; Leng, Mingzhe; Hou, Wanguo; Du, Na

2013-12-01

Mixed metal oxides (MMO) are always obtained from layered double hydroxide (LDH) by thermal decomposition. In the present work, a zinc titanium LDH with the zinc titanium molar ratio of 4.25 was prepared by urea method and ZnO-based mixed oxides were obtained by calcining at or over 500°C. The MMO was used as electrodes for dye sensitized solar cell (DSSC). The cells constructed by films of prepared composite materials using a N719 as dye were prepared. The efficiency values of these cells are 0.691%, 0.572% and 0.302% with MMO prepared at 500, 600 and 700°C, respectively.

The bimodal distribution spin Seebeck effect enhancement in epitaxial Ni0.65Zn0.35Al0.8Fe1.2O4 thin film

NASA Astrophysics Data System (ADS)

Wang, Hua; Hou, Dazhi; Kikkawa, Takashi; Ramos, Rafael; Shen, Ka; Qiu, Zhiyong; Chen, Yao; Umeda, Maki; Shiomi, Yuki; Jin, Xiaofeng; Saitoh, Eiji

2018-04-01

The temperature dependence of the spin Seebeck effect (SSE) in epitaxial Ni0.65Zn0.35Al0.8Fe1.2O4 (NZA ferrite) thin film has been investigated systematically. The SSE at high fields shows a bimodal distribution enhancement from 3 K to 300 K and is well fitted with a double-peak Lorentzian function. We speculate the symmetric SSE enhancement in Pt/NZA ferrite bilayer, which is different from the magnon polarons induced asymmetric spikes in the SSE of Pt/YIG [T. Kikkawa et al. Phys. Rev. Lett. 117, 207203 (2016)], may result from the magnon-phonon interactions occurring at the intersections of the quantized magnon and phonon dispersions. The SSE results are helpful for the investigation of the magnon-phonon interaction in the magnetic ultrathin films.

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Numerical investigation of optimized CZTSSe based solar cell in Wx-Amps environment

NASA Astrophysics Data System (ADS)

Mohanty, Soumya Priyadarshini; Padhy, Srinibasa; Chowdhury, Joy; Sing, Udai P.

2018-05-01

The CZTSSe is the modified version of CZTS with selenium infusion. It shows maximum efficiency in the band gap from 1 to 1.4 eV. In our present work CZTSSe based solar cell is investigated using Wx-Amps tool. The Mo layer, absorber layer, CdS layer, i-ZnO [4]and Al-ZnO layers with their electrical, optical and material parameters are fitted in the tool. The vital parameters such as carrier density, thickness of the CZTSSe absorber layer, operating temperature, CdS buffer layer thickness and its carrier density on the cell interpretation are calculated. From[4] the simulation results it is apparent that the optimal absorber layer varies from 2.9 µm to 3.7 µm. The temperature variation has a strong influence on the efficiency of the cell. An optimal efficiency of 22% (With Jsc=33 mA/cm2, Voc=0.98 V, and fill factor= 68%) are attained. These results will give some insight for makeing higher efficiency CZTSSe based solar cell.

Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling

NASA Astrophysics Data System (ADS)

Tiira, Jonna; Radevici, Ivan; Haggren, Tuomas; Hakkarainen, Teemu; Kivisaari, Pyry; Lyytikäinen, Jari; Aho, Arto; Tukiainen, Antti; Guina, Mircea; Oksanen, Jani

2017-02-01

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV- measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.

Gas-sensing behaviour of ZnO/diamond nanostructures.

PubMed

Davydova, Marina; Laposa, Alexandr; Smarhak, Jiri; Kromka, Alexander; Neykova, Neda; Nahlik, Josef; Kroutil, Jiri; Drahokoupil, Jan; Voves, Jan

2018-01-01

Microstructured single- and double-layered sensor devices based on p-type hydrogen-terminated nanocrystalline diamond (NCD) films and/or n-type ZnO nanorods (NRs) have been obtained via a facile microwave-plasma-enhanced chemical vapour deposition process or a hydrothermal growth procedure. The morphology and crystal structure of the synthesized materials was analysed with scanning electron microscopy, X-ray diffraction measurements and Raman spectroscopy. The gas sensing properties of the sensors based on i) NCD films, ii) ZnO nanorods, and iii) hybrid ZnO NRs/NCD structures were evaluated with respect to oxidizing (i.e., NO 2 , CO 2 ) and reducing (i.e., NH 3 ) gases at 150 °C. The hybrid ZnO NRs/NCD sensor showed a remarkably enhanced NO 2 response compared to the ZnO NRs sensor. Further, inspired by this special hybrid structure, the simulation of interaction between the gas molecules (NO 2 and CO 2 ) and hybrid ZnO NRs/NCD sensor was studied using DFT calculations.

Fabrication of hierarchical core-shell polydopamine@MgAl-LDHs composites for the efficient enrichment of radionuclides

NASA Astrophysics Data System (ADS)

Zhu, Kairuo; Lu, Songhua; Gao, Yang; Zhang, Rui; Tan, Xiaoli; Chen, Changlun

2017-02-01

Novel hierarchical core/shell structured polydopamine@MgAl-layered double hydroxides (PDA@MgAl-LDHs) composites involving MgAl-layered double hydroxide shells and PDA cores were fabricated thought one-pot coprecipitation assembly and methodically characterized by X-ray diffraction, Fourier transformed infrared spectroscopy, scanning/transmission electron microscopy, selected area electron diffraction, elemental mapping, thermogravimetric analysis and X-ray photoelectron spectroscopy technologies. U(VI) and Eu(III) sorption experiments showed that the PDA@MgAl-LDHs exhibited higher sorption ability with a maximum sorption capacity of 142.86 and 76.02 mg/g at 298 K and pH 4.5, respectively. More importantly, according to XPS analyses, U(VI) and Eu(III) were sorbed on PDA@MgAl-LDHs via oxygen-containing functional groups, and the chemical affinity of U(VI) by oxygen-containing functional groups is higher than that of Eu(III). These observations show great expectations in the enrichment of radionuclides from aquatic environments by PDA@MgAl-LDHs.

Zinc Oxide/TiO2 Bilayer Heterojunction as a Working Electrode in Quasi Solid Dye Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Aprilia, A.; Safriani, L.; Arsyad, Wa Ode S.; Syakir, N.; Susilawati, T.; Mulyana, C.; Fitrilawati; Hidayat, R.

2017-07-01

Bilayer heterojunction of aluminium doped zinc oxide (AZO) and titanium dioxide (TiO2) mesoporous has been successfully deposited on fluorine tin oxide (FTO) substrate as working electrode in dye sensitized solar cell. This layer was used as working electrode in quasi solid dye sensitized solar cell. The solar cell structure is FTO/ZnO/TiO2/PGE/Pt/FTO using polymer gel electrolyte (PGE). In polymer gel electrolyte system, hybrid copolymer based on poly-TMSPMA (3-methoxysilyl propyl methacrylate) was used as a matrix to trap ionic liquid. An addition of aluminum as atom dopant also studied to observe the physical properties changes of photoanode related to solar cell performance. AlCl3 was used as dopant material with the concentrations at 0.5 weight % and 1.0 weight% of zinc acetate dehydrate as raw material. Based on our previous result, the existence of Al dopant would decrease the surface roughness of ZnO layer, reduce the grain size of ZnO particles, transmittance at visible light increase and also change the charge carrier density. Nevertheless, the highest efficiency was achieved for undoped ZnO/TiO2 photoanode (η=0.67%). Based on current-voltage measurement data analysis (using diode model equation) the ideality factor (n) of device using undoped ZnO was smaller (n=2.96) than AZO 0.5 wt% and 1.0 wt% (n=∼4), indicate better quality of undoped ZnO/TiO2 interfaces rather than AZO/TiO2.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Impact of strain on electronic defects in (Mg,Zn)O thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Florian, E-mail: fschmidt@physik.uni-leipzig.de; Müller, Stefan; Wenckstern, Holger von

2014-09-14

We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y₂, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it ismore » shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.« less

Electrical responses of artificial DNA nanostructures on solution-processed In-Ga-Zn-O thin-film transistors with multistacked active layers.

PubMed

Jung, Joohye; Kim, Si Joon; Yoon, Doo Hyun; Kim, Byeonghoon; Park, Sung Ha; Kim, Hyun Jae

2013-01-01

We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (V(on)) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in V(on) (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

NASA Technical Reports Server (NTRS)

Moulot, Jacques; Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Bailey, Sheila

1995-01-01

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Zn1-xCdxSe/ZnSe multiple quantum well photomodulators

NASA Astrophysics Data System (ADS)

Tang, Jiuyao; Kawakami, Yoichi; Fujita, Shizuo; Fujita, Shigeo

1996-10-01

ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.

Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

NASA Astrophysics Data System (ADS)

Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

2018-06-01

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

Growth of ZnOx:Al by high-throughput CVD at atmospheric pressure

NASA Astrophysics Data System (ADS)

Illiberi, A.; Simons, P. J. P. M.; Kniknie, B.; van Deelen, J.; Theelen, M.; Zeman, M.; Tijssen, M.; Zijlmans, W.; Steijvers, H. L. A. H.; Habets, D.; Janssen, A. C.; Beckers, E. H. A.

2012-05-01

Aluminum doped zinc oxide films (ZnOx:Al) have been deposited on a moving glass substrate by a metalorganic CVD process at atmospheric pressure in an in-line industrial type reactor. Tertiary-butanol has been used as an oxidant for diethylzinc and trimethylaluminium as the dopant gas. The effect of the deposition temperature (from 380 to 540 °C) on the deposition rate has been investigated by a numerical code, where a gas phase reaction among tertiary-butanol and diethylzinc is assumed to occur. The structural (crystallinity and morphology) properties of the films as a function of the deposition temperature have been analyzed by using X-ray diffraction and Scanning Electron Microscopy. A maximum growth rate of ˜11 nm/s was found at a deposition temperature of 480 °C, for which ZnOx:Al films show (002) preferential orientation, good crystalline quality and a naturally rough surface. ZnOx:Al films deposited at 480 °C are also highly conductive (R<10 Ω/□ for film thicknesses above 1050 nm) and transparent (>85% in the visible range). These films have been used as front transparent conductive oxide layers in p i n a-Si:H solar cells, achieving an initial efficiency approaching 8%.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

NASA Astrophysics Data System (ADS)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.

PubMed

Ding, Xingwei; Qin, Cunping; Song, Jiantao; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

2017-12-01

Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al 2 O 3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a , which can explain the experimental observation. A high-field effect mobility of 9.4 cm 2 /Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 10 7 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Ding, Xingwei; Qin, Cunping; Song, Jiantao; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

2017-01-01

Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a, which can explain the experimental observation. A high-field effect mobility of 9.4 cm2/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 107 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.

Optical reflectance of solution processed quasi-superlattice ZnO and Al-doped ZnO (AZO) channel materials

NASA Astrophysics Data System (ADS)

Buckley, Darragh; McCormack, Robert; O'Dwyer, Colm

2017-04-01

The angle-resolved reflectance of high crystalline quality, c-axis oriented ZnO and AZO single and periodic quasi-superlattice (QSL) spin-coated TFT channels materials are presented. The data is analysed using an adapted model to accurately determine the spectral region for optical thickness and corresponding reflectance. The optical thickness agrees very well with measured thickness of 1-20 layered QSL thin films determined by transmission electron microscopy if the reflectance from lowest interference order is used. Directional reflectance for single layers or homogeneous QSLs of ZnO and AZO channel materials exhibit a consistent degree of anti-reflection characteristics from 30 to 60° (~10-12% reflection) for thickness ranging from ~40 nm to 500 nm. The reflectance of AZO single layer thin films is  <10% from 30 to 75° at 514.5 nm, and  <6% at 632.8 nm from 30-60°. The data show that ZnO and AZO with granular or periodic substructure behave optically as dispersive, continuous thin films of similar thickness, and angle-resolved spectral mapping provides a design rule for transparency or refractive index determination as a function of film thickness, substructure (dispersion) and viewing angle.

Enhanced photocatalytic properties of the 3D flower-like Mg-Al layered double hydroxides decorated with Ag{sub 2}CO{sub 3} under visible light illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ao, Yanhui, E-mail: andyao@hhu.edu.cn; Wang, Dandan; Wang, Peifang

Highlights: • 3D flower-like Ag{sub 2}CO{sub 3}/Mg-Al layered double hydroxide composite was prepared. • The nanocomposites exhibited high photocatalytic activities on different organic pollutants. • The mechanism of the enhanced activity were investigated. - Abstract: A facile anion-exchange precipitation method was employed to synthesize 3D flower-like Ag{sub 2}CO{sub 3}/Mg-Al layered double hydroxide composite photocatalyst. Results showed that Ag{sub 2}CO{sub 3} nanoparticles dispersed uniformly on the petals of the flower-like Mg-Al LDH. The obtained nanocomposites exhibited high photocatalytic activities on different organic pollutants (cationic and anionic dyes, phenol) under visible light illumination. The high photocatalytic activity can be ascribed to themore » special structure which accomplishes the wide-distribution of Ag{sub 2}CO{sub 3} nanoparticles on the surfaces of the 3D flower-like nanocomposites. Therefore, it can provide much more active sites for the degradation of organic pollutant. Then the photocatalytic mechanism was also verified by reactive species trapping experiments in detail. The work would pave a facile way to prepare LDHs based hierarchical photocatalysts with high activity for the degradation of wide range organic pollutants under visible light irradiation.« less

Carbon monoxide gas sensing using zinc oxide deposited by successive ionic layer adhesion and reaction

NASA Astrophysics Data System (ADS)

Florido, E. A.; Dagaas, N. A. C.

2017-05-01

This study was aimed to determine the carbon monoxide (CO) gas sensing capability of zinc oxide (ZnO) film fabricated by successive ionic layer adsorption and reaction (SILAR) on glass substrate. Films consisting of a mixture of flower-like clusters of ZnO nanorods and nanowires were observed using scanning electron microscopy (SEM). Current-voltage characterization of the samples showed an average resistivity of 13.0 Ω-m. Carbon monoxide gas was synthesized by mixing the required amount of formic acid and excess sulfuric acid to produce CO gas concentrations of 100, 200, 300, 400, and 500 parts per million (ppm) v/v with five trials for each concentration. Two sets of data were obtained. One set consisted of the voltage response of the single film sensor while the other set were obtained from the double film sensor. The voltage response for the single film sensor and the double film sensor showed an average sensitivity of 0.0038 volts per ppm and 0.0024 volts per ppm, respectively. The concentration the single film can detect with a 2V output is 526 ppm while the double film sensor can detect up to 833 ppm with a 2V output. This shows that using the double film sensor is advantageous compared to single film sensor, because of its higher concentration range due to the larger surface area for the gas to interact. Moreover, the measured average resistance for the single film sensor was 10 MΩ while for the double film sensor the average resistance was 5 MΩ.

Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

PubMed

Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

2017-02-01

Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al 2 O 3 , TiO 2 , ZnO, HfO 2 , and ZrO 2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al 2 O 3 or HfO 2 provided the highest level of initial corrosion protection, but films of HfO 2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO 2 or ZrO 2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

Fabrication of DC inorganic electroluminescent thin-film devices with novel n-p-n type structure

NASA Astrophysics Data System (ADS)

Ishimura, Takuyoshi; Matsumoto, Hironaga

2014-04-01

Inorganic electroluminescent (iEL) thin films are used in light-emitting devices and are functional under alternating current conditions only. Stable luminescent light has yet to be obtained under direct current conditions. We postulated that thin-film iEL light emission occurs when an injected electron occupies the excited state of a luminescent center and then recombines radiatively. From this perspective, we fabricated a novel stacked n-p-n type thin-film iEL device composed of indium tin oxide (ITO)-ZnO-CuAlO2-ZnS-ZnS:TbF3-Al thin films and obtained stable luminescence using a low-voltage DC power supply. The overall luminescent color of the device depended on only the dopant in the luminescent layer, not the band gap or thin-film material.

Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

PubMed Central

Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

2016-01-01

Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications. PMID:26814581

Perovskite-based solar cells with inorganic inverted hybrid planar heterojunction structure

NASA Astrophysics Data System (ADS)

Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

2018-01-01

We demonstrated the good performance of inorganic inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with glass/ITO/NiOx/CH3NH3PbI3 perovskite/C60/ room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiOx and ZnO, respectively. The inorganic hole and electron transport layer of NiOx and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (VOC), short-circuit current density (JSC), and power conversion efficiency (η%) of the SCs. We obtained inorganic inverted CH3NH3PbI3 perovskite-based SCs with a JSC of 21.96 A/cm2, a VOC of 1.02 V, a fill factor (FF%) of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O2. The inorganic inverted CH3NH3PbI3 perovskite-based SCs demonstrated improved storage reliability.

Tribological improvements of carbon-carbon composites by infiltration of atomic layer deposited lubricious nanostructured ceramic oxides

NASA Astrophysics Data System (ADS)

Mohseni, Hamidreza

A number of investigators have reported enhancement in oxidation and wear resistant of carbon-carbon composites (CCC) in the presence of protective coating layers. However, application of a surface and subsurface coating system that can preserve its oxidation and wear resistance along with maintaining lubricity at high temperature remains unsolved. To this end, thermodynamically stable protective oxides (ZnO/Al2O3/ZrO2) have been deposited by atomic layer deposition (ALD) to infiltrate porous CCC and graphite foams in order to improve the thermal stability and wear resistance in low and high speed sliding contacts. Characterization of microstructural evolution was achieved by using energy dispersive x-ray spectroscopy (EDS) mapping in scanning electron microscope (SEM) coupled with focused ion beam (FIB), x-ray tomography, high resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD). Evaluation of the tribological properties of CCC coated with abovementioned ALD thin films were performed by employing low speed pure sliding tribometer and a high speed/frequency reciprocating rig to simulate the fretting wear behavior at ambient temperature and elevated temperatures of 400°C. It was determined with x-ray tomography imaging and EDS mapping that ALD ZnO/Al2O3/ZrO2 nanolaminates and baseline ZrO2 coatings exhibited excellent conformality and pore-filling capabilities down to ˜100 microm and 1.5 mm in the porous CCC and graphite foam, respectively, which were dependent on the exposure time of the ALD precursors. XRD and HRTEM determined the crystalline phases of {0002} textured ZnO (wurtzite), amorphous Al2O3, and {101}-tetragonal ZrO2. Significant improvements up to ˜65% in the sliding and fretting wear factors were determined for the nanolaminates in comparison to the uncoated CCC. A tribochemical sliding-induced mechanically mixed layer (MML) was found to be responsible for these improvements. HRTEM confirmed the presence of a high density of ZnO shear-induced basal stacking faults inside the wear tracks responsible for intrafilm shear velocity accommodation that mitigated friction and wear.

Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al{sub 2}O{sub 3} on Li ion battery electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia

2016-01-15

Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the poresmore » of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li{sub 0.20}Mn{sub 0.54}Ni{sub 0.13}Co{sub 0.13}O{sub 2} electrodes on flexible metal foil were coated with Al{sub 2}O{sub 3} using 2–5 Al{sub 2}O{sub 3} ALD cycles. The Al{sub 2}O{sub 3} ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al{sub 2}O{sub 3} S-ALD coating on the electrodes enhanced the capacity stability. This S-ALD process could be extended to roll-to-roll operation for the commercialization of S-ALD for coating Li ion battery electrodes.« less

Surface pre-treatment of aluminium by cleaning, chemical ething and conversion coating

NASA Astrophysics Data System (ADS)

Zaki, Mohammad Hafizudden Mohd; Mohd, Yusairie; Isa, Nik Norziehana Che

2017-12-01

Surface pre-treatment is one of the critical treatments for surface modification of aluminium (Al). In this study, pre-treatment of Al surface involved three stages; (1) cleaning (polishing and degreasing), (2) chemical etching (alkaline and acid) and (3) conversion coating (ie: zincate treatment). Cleaning process of Al was conducted by polishing and degreasing with acetone while etching process was done by immersion in 1.25 M NaOH solution (i.e: alkaline etching) followed with acid etching using 8 M HNO3 solution. The zincate treatment was conducted via electroless coating method by immersion of Al into a bath solution containing 0.5 M Zn(NO3)2, 0.1 M HNO3 and 0.2 M NaBH4 (reducing agent) for one hour. Different temperatures (ie: 25 °C, 50 °C, 75 °C, 90 °C) of bath solutions at pH 4 were used to investigate the effect of temperature on zincate treatment. Surface morphology and chemical composition of the pre-treated Al were characterized using Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersion X-ray analysis (EDX), respectively. The results showed that oxide layer on Al surface decreased after chemical etching process. Temperature of zincate solution has significantly affected the conversion coating process of aluminium. It was found that zinc oxide (ZnO) and zinc borate (ZnO.B2O3) were dominantly formed after zincate treatment at high temperature (ie:90 °C) with curved blade-like structure and composition of Zn, B and O with 13.70 wt.%, 3.52 wt.% and 54.39 wt.%, respectively. However, zincate treatment at low temperature (ie:<50 °C) has produced low metallic Zn.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

Factors affecting nucleolytic efficiency of some ternary metal complexes with DNA binding and recognition domains. Crystal and molecular structure of Zn(phen)(edda).

PubMed

Seng, Hoi-Ling; Ong, Han-Kiat Alan; Rahman, Raja Noor Zaliha Raja Abd; Yamin, Bohari M; Tiekink, Edward R T; Tan, Kong Wai; Maah, Mohd Jamil; Caracelli, Ignez; Ng, Chew Hee

2008-11-01

The binding selectivity of the M(phen)(edda) (M=Cu, Co, Ni, Zn; phen=1,10-phenanthroline, edda=ethylenediaminediacetic acid) complexes towards ds(CG)(6), ds(AT)(6) and ds(CGCGAATTCGCG) B-form oligonucleotide duplexes were studied by CD spectroscopy and molecular modeling. The binding mode is intercalation and there is selectivity towards AT-sequence and stacking preference for A/A parallel or diagonal adjacent base steps in their intercalation. The nucleolytic properties of these complexes were investigated and the factors affecting the extent of cleavage were determined to be: concentration of complex, the nature of metal(II) ion, type of buffer, pH of buffer, incubation time, incubation temperature, and the presence of hydrogen peroxide or ascorbic acid as exogenous reagents. The fluorescence property of these complexes and its origin were also investigated. The crystal structure of the Zn(phen)(edda) complex is reported in which the zinc atom displays a distorted trans-N(4)O(2) octahedral geometry; the crystal packing features double layers of complex molecules held together by extensive hydrogen bonding that inter-digitate with adjacent double layers via pi...pi interactions between 1,10-phenanthroline residues. The structure is compared with that of the recently described copper(II) analogue and, with the latter, included in molecular modeling.

AFRRI (Armed Forces Radiobiology Research Institute) Reports, July, August and September 1987.

DTIC Science & Technology

1987-11-01

mononuclear cell layer obtained after Percol isolation contained approximately 90% mono- cytes as assessed by esterase staining. In most experiments...forming cell) were assayed using the double layer agar technique basically as described by Hagan et al. (22). The culture medium was double strength CMRL...trypticase soy broth, 20 g/ml L-asparagine. and penicillin-streptomycin. In the bottom layer of 35 mm plastic Petri dishes was 1 ml of a 1:1 mixture of culture

CdS-pillared CoAl-layered double hydroxide nanosheets with superior photocatalytic activity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Yanqiang; Lin, Bizhou, E-mail: bzlin@hqu.edu.cn; Jia, Fangcao

Graphical abstract: - Highlights: • CdS nanocrystals were intercalated into CoAl-LDH interlayer. • The nanohybrid display superior visible-light photocatalytic activity. • A photoexcitation model for the pillared heterostructured system was proposed. - Abstract: A new nanohybrid was synthesized by mixing the positively charged 2D nanosheets of CoAl-layered double hydroxide (CoAl-LDH) and the negatively charged CdS nanosol suspensions. It was revealed that the CdS nanoparticles were intercalated into the interlayer region of CoAl-LDH with a spacing of 2.62 nm. The obtained nanohybrid exhibited a mesoporous texture with an expanded specific surface area of 62 m{sup 2} g{sup −1} and a superiormore » photocatalytic activity in the degradation of acid red with a reaction constant of 1.26 × 10{sup −2} min{sup −1} under visible-light radiation, which is more than 2 times those of his parents CoAl-LDH and CdS.« less

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-02-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Air-stable flexible organic light-emitting diodes enabled by atomic layer deposition.

PubMed

Lin, Yuan-Yu; Chang, Yi-Neng; Tseng, Ming-Hung; Wang, Ching-Chiun; Tsai, Feng-Yu

2015-01-16

Organic light-emitting diodes (OLED) are an energy-efficient light source with many desirable attributes, besides being an important display of technology, but its practical application has been limited by its low air-stability. This study demonstrates air-stable flexible OLEDs by utilizing two atomic-layer-deposited (ALD) films: (1) a ZnO film as both a stable electron-injection layer (EIL) and as a gas barrier in plastics-based OLED devices, and (2) an Al2O3/ZnO (AZO) nano-laminated film for encapsulating the devices. Through analyses of the morphology and electrical/gas-permeation properties of the films, we determined that a low ALD temperature of 70 °C resulted in optimal EIL performance from the ZnO film and excellent gas-barrier properties [water vapor transmission rate (WVTR) <5 × 10(-4) g m(-2) day(-1)] from both the ZnO EIL and the AZO encapsulating film. The low-temperature ALD processes eliminated thermal damage to the OLED devices, which were severe when a 90 °C encapsulation process was used, while enabling them to achieve an air-storage lifetime of >10,000 h.

Air-Stable flexible organic light-emitting diodes enabled by atomic layer deposition

NASA Astrophysics Data System (ADS)

Lin, Yuan-Yu; Chang, Yi-Neng; Tseng, Ming-Hung; Wang, Ching-Chiun; Tsai, Feng-Yu

2015-01-01

Organic light-emitting diodes (OLED) are an energy-efficient light source with many desirable attributes, besides being an important display of technology, but its practical application has been limited by its low air-stability. This study demonstrates air-stable flexible OLEDs by utilizing two atomic-layer-deposited (ALD) films: (1) a ZnO film as both a stable electron-injection layer (EIL) and as a gas barrier in plastics-based OLED devices, and (2) an Al2O3/ZnO (AZO) nano-laminated film for encapsulating the devices. Through analyses of the morphology and electrical/gas-permeation properties of the films, we determined that a low ALD temperature of 70 °C resulted in optimal EIL performance from the ZnO film and excellent gas-barrier properties [water vapor transmission rate (WVTR) <5 × 10-4 g m-2 day-1] from both the ZnO EIL and the AZO encapsulating film. The low-temperature ALD processes eliminated thermal damage to the OLED devices, which were severe when a 90 °C encapsulation process was used, while enabling them to achieve an air-storage lifetime of >10 000 h.

Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

PubMed

Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

2016-04-13

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

Fabrication of biodegradable Zn-Al-Mg alloy: Mechanical properties, corrosion behavior, cytotoxicity and antibacterial activities.

PubMed

Bakhsheshi-Rad, H R; Hamzah, E; Low, H T; Kasiri-Asgarani, M; Farahany, S; Akbari, E; Cho, M H

2017-04-01

In this work, binary Zn-0.5Al and ternary Zn-0.5Al-xMg alloys with various Mg contents were investigated as biodegradable materials for implant applications. Compared with Zn-0.5Al (single phase), Zn-0.5Al-xMg alloys consisted of the α-Zn and Mg 2 (Zn, Al) 11 with a fine lamellar structure. The results also revealed that ternary Zn-Al-Mg alloys presented higher micro-hardness value, tensile strength and corrosion resistance compared to the binary Zn-Al alloy. In addition, the tensile strength and corrosion resistance increased with increasing the Mg content in ternary alloys. The immersion tests also indicated that the corrosion rates in the following order Zn-0.5Al-0.5Mg

Electrical characterization of FIB processed metal layers for reliable conductive-AFM on ZnO microstructures

NASA Astrophysics Data System (ADS)

Pea, M.; Maiolo, L.; Giovine, E.; Rinaldi, A.; Araneo, R.; Notargiacomo, A.

2016-05-01

We report on the conductive-atomic force microscopy (C-AFM) study of metallic layers in order to find the most suitable configuration for electrical characterization of individual ZnO micro-pillars fabricated by focused ion beam (FIB). The electrical resistance between the probe tip and both as deposited and FIB processed metal layers (namely, Cr, Ti, Au and Al) has been investigated. Both chromium and titanium evidenced a non homogenous and non ohmic behaviour, non negligible scanning probe induced anodic oxidation associated to electrical measurements, and after FIB milling they exhibited significantly higher tip-sample resistance. Aluminium had generally a more apparent non conductive behaviour. Conversely, gold films showed very good tip-sample conduction properties being less sensitive to FIB processing than the other investigated metals. We found that a reliable C-AFM electrical characterization of ZnO microstructures obtained by FIB machining is feasible by using a combination of metal films as top contact layer. An Au/Ti bilayer on top of ZnO was capable to sustain the FIB fabrication process and to form a suitable ohmic contact to the semiconductor, allowing for reliable C-AFM measurement. To validate the consistency of this approach, we measured the resistance of ZnO micropillars finding a linear dependence on the pillar height, as expected for an ohmic conductor, and evaluated the resistivity of the material. This procedure has the potential to be downscaled to nanometer size structures by a proper choice of metal films type and thickness.

Graphene-oxide-supported CuAl and CoAl layered double hydroxides as enhanced catalysts for carbon-carbon coupling via Ullmann reaction

NASA Astrophysics Data System (ADS)

Ahmed, Nesreen S.; Menzel, Robert; Wang, Yifan; Garcia-Gallastegui, Ainara; Bawaked, Salem M.; Obaid, Abdullah Y.; Basahel, Sulaiman N.; Mokhtar, Mohamed

2017-02-01

Two efficient catalyst based on CuAl and CoAl layered double hydroxides (LDHs) supported on graphene oxide (GO) for the carbon-carbon coupling (Classic Ullmann Homocoupling Reaction) are reported. The pure and hybrid materials were synthesised by direct precipitation of the LDH nanoparticles onto GO, followed by a chemical, structural and physical characterisation by electron microscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), surface area measurements and X-ray photoelectron spectroscopy (XPS). The GO-supported and unsupported CuAl-LDH and CoAl-LDH hybrids were tested over the Classic Ullman Homocoupling Reaction of iodobenzene. In the current study CuAl- and CoAl-LDHs have shown excellent yields (91% and 98%, respectively) at very short reaction times (25 min). GO provides a light-weight, charge complementary and two-dimensional material that interacts effectively with the 2D LDHs, in turn enhancing the stability of LDH. After 5 re-use cycles, the catalytic activity of the LDH/GO hybrid is up to 2 times higher than for the unsupported LDH.

Syntheses and applications of manganese-doped II-VI semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Yang, Heesun

Syntheses, characterizations, and applications of two different Mn-doped semiconductor nanocrystals, ZnS:Mn and CdS:Mn/ZnS core/shell, were investigated. ZnS:Mn nanocrystals with sizes between 3 and 4 nm were synthesized via a competitive reaction chemistry. A direct current (dc) electroluminescent (EL) device having a hybrid organic/inorganic multilayer structure of an indium tin oxide (ITO) transparent conducting electrode, a (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT-PSS) and a poly(N-vinylcarbazole) (PVK) bilayer hole transport film, a ZnS:Mn nanocrystal layer, and Al dot contacts was demonstrated to emit blue (˜445 and ˜495 nm) from PVK and yellow (˜600 nm) light from Mn activator in ZnS. The EL emission spectrum was dependent upon both the voltage and Mn concentration, showing a decreasing nanocrystal to PVK emission ratio from 10 at 20 V to 4 at 28 V, and an increasing ratio from 1.3 at 0.40 mol % to 4.3 at 2.14 mol %. Mn-doped CdS core nanocrystals were produced ranging from 1.5 to 2.3 nm in diameter with a ZnS shell via a reverse micelle process. In contrast to CdS:Mn nanocrystals passivated by n-dodecanethiol, ZnS-passivated CdS:Mn (CdS:Mn/ZnS core/shell) nanocrystals were efficient and photostable. CdS:Mn/ZnS core/shell nanocrystals exhibited a quantum yield of ˜18%, and the photoluminescence (PL) intensity increased by 40% after 400 nm UV irradiation in air. X-ray photoelectron spectroscopy (XPS) data showed that UV irradiation of CdS:Mn/ZnS nanocrystals induces the photooxidation of the ZnS shell surface to ZnSO4. This photooxidation product is presumably responsible for the increased PL emission by serving as a passivating surface layer. Luminescent lifetime data from the core/shell nanocrystals could be fit with two exponential functions, with a time constant of ˜170 nsec for the defect-related centers and of ˜1 msec for the Mn centers. The CdS:Mn/ZnS nanocrystals with a core crystal diameter of 2.3 nm and a 0.4 nm thick ZnS shell were used as an electroluminescent material. EL devices were tested having a hybrid organic/inorganic multilayer structure of ITO//PEDOT-PSS//conjugated polymer//CdS:Mn/ZnS nanocrystal//Al. Orange from PVK device and green EL emission from poly(p-phenylene vinylene) (PPV) device were observed, respectively. These observations are shown to be consistent with the energy level diagrams of the EL devices. The CdS:Mn/ZnS core/shell quantum dots are not water-soluble because of their hydrophobicity. Silica-overcoated CdS:Mn/ZnS quantum dots were synthesized to create water-soluble quantum dots. The amorphous and porous silica layer did not significantly modify the optical and photophysical properties of CdS:Mn/ZnS quantum dots.

Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers

NASA Astrophysics Data System (ADS)

Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

2010-12-01

The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 109 Mcps mm-2 in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (<=10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous. The possible choices are, however, quite limited, since only 'mature' materials, which operate at room temperature and can be manufactured reliably should reasonably be considered. Since GaAs is still known to cause reliability problems, the simplest choice is Si, however with the drawback of strong Compton scatter which can cause considerable inter-pixel cross-talk. To investigate the potential and the problems of Si in a multi-layer detector, in this paper the combination of top detector layers made of Si with lower layers made of Cd[Zn]Te is studied by using Monte Carlo simulated detector responses. It is found that the inter-pixel cross-talk due to Compton scatter is indeed very high; however, with an appropriate cross-talk correction scheme, which is also described, the negative effects of cross-talk are shown to be removed to a very large extent.

Wearable high-performance supercapacitors based on Ni-coated cotton textile with low-crystalline Ni-Al layered double hydroxide nanoparticles.

PubMed

Lu, Haicui; Chen, Jizhang; Tian, Qinghua

2018-03-01

Wearable electronics are developing rapidly in recent years. In this work, we develop a cost-effective, facile, and scalable approach to transform insulating cotton textile to highly conductive Ni-coated cotton textile (NCT). In order to verify the feasibility of NCT as a flexible current collector for wearable supercapacitors, we electrodeposit low-crystalline Ni-Al layered double hydroxide (LDH) nanoparticles onto the NCT. The obtained NCT@NiAl-LDH shows high specific capacitance (935.2 mF cm -2 ), superior rate capability, and good cyclability. Besides, the asymmetric supercapacitor (ASC) assembled from NCT@NiAl-LDH exhibits high specific energy of 58.8 Wh kg -1 (134 μWh cm -2 ) when the specific power is 539 W kg -1 (1228 μW cm -2 ). The results demonstrate great potential of our methodology. Copyright © 2017 Elsevier Inc. All rights reserved.

Zn2+ and Sr2+ Adsorption at the TiO2 (110)-Electrolyte Interface: Influence of Ionic Strength, Coverage, and Anions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang,Z.; Fenter, P.; Cheng, L.

2006-01-01

The X-ray standing wave technique was used to probe the sensitivity of Zn{sup 2+} and Sr{sup 2+} ion adsorption to changes in both the adsorbed ion coverage and the background electrolyte species and concentrations at the rutile ({alpha}-TiO{sub 2}) (110)-aqueous interface. Measurements were made with various background electrolytes (NaCl, NaTr, RbCl, NaBr) at concentrations as high as 1 m. The results demonstrate that Zn{sub 2+} and Sr{sub 2+} reside primarily in the condensed layer and that the ion heights above the Ti-O surface plane are insensitive to ionic strength and the choice of background electrolyte (with <0.1 Angstroms changes overmore » the full compositional range). The lack of any specific anion coadsorption upon probing with Br{sup -}, coupled with the insensitivity of Zn{sup 2+} and Sr{sup 2+} cation heights to changes in the background electrolyte, implies that anions do not play a significant role in the adsorption of these divalent metal ions to the rutile (110) surface. Absolute ion coverage measurements for Zn{sup 2+} and Sr{sup 2+} show a maximum Stern-layer coverage of {approx}0.5 monolayer, with no significant variation in height as a function of Stern-layer coverage. These observations are discussed in the context of Gouy-Chapman-Stern models of the electrical double layer developed from macroscopic sorption and pH-titration studies of rutile powder suspensions. Direct comparison between these experimental observations and the MUltiSIte Complexation (MUSIC) model predictions of cation surface coverage as a function of ionic strength revealed good agreement between measured and predicted surface coverages with no adjustable parameters.« less

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts.

PubMed

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-12-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10 -2 Ω·cm 2 . Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

NASA Astrophysics Data System (ADS)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Synthesis and crystal structure of a novel pentaborate, Na{sub 3}ZnB{sub 5}O{sub 10}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Xuean; Li Ming; Chang Xinan

A novel ternary borate, trisodium zinc pentaborate, Na{sub 3}ZnB{sub 5}O{sub 10}, has been prepared by solid-state reaction at temperature below 750deg. C. The single-crystal X-ray structural analysis showed that Na{sub 3}ZnB{sub 5}O{sub 10} crystallizes in the monoclinic space group P2{sub 1}/n with a=6.6725(7)A, b=18.1730(10)A, c=7.8656(9)A, {beta}=114.604(6){sup o}, Z=4. It represents a new structure type in which double ring [B{sub 5}O{sub 10}]{sup 5-} building units are bridged by ZnO{sub 4} tetrahedra through common O atoms to form a two-dimensional {sub {approx}}{sup 2}[ZnB{sub 5}O{sub 10}]{sup 3-}-layer that affords one-dimensional channels running parallel to the [101] direction. Symmetry-center related {sub {approx}}{sup 2}[ZnB{sub 5}O{submore » 10}]{sup 3-} layers are stacked along the b-axis, with the interlayer void spaces and intralayer open channels filled by Na{sup +} cations to balance charge. The IR spectrum further confirms the presence of both BO{sub 3} and BO{sub 4} groups and UV-vis diffuse reflectance spectrum shows a band gap of about 3.2eV.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong

In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δmore » 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.« less

Streaming potential method for characterizing interaction of electrical double layers between rice roots and Fe/Al oxide-coated quartz in situ.

PubMed

Liu, Zhao-Dong; Wang, Hai-Cui; Li, Jiu-Yu; Xu, Ren-Kou

2017-10-01

The interaction between rice roots and Fe/Al oxide-coated quartz was investigated through zeta potential measurements and column leaching experiments in present study. The zeta potentials of rice roots, Fe/Al oxide-coated quartz, and the binary systems containing rice roots and Fe/Al oxide-coated quartz were measured by a specially constructed streaming potential apparatus. The interactions between rice roots and Fe/Al oxide-coated quartz particles were evaluated/deduced based on the differences of zeta potentials between the binary systems and the single system of rice roots. The zeta potentials of the binary systems moved in positive directions compared with that of rice roots, suggesting that there were overlapping of diffuse layers of electric double layers on positively charged Fe/Al oxide-coated quartz and negatively charged rice roots and neutralization of positive charge on Fe/Al oxide-coated quartz with negative charge on rice roots. The greater amount of positive charges on Al oxide led to the stronger interaction of Al oxide-coated quartz with rice roots and the more shift of zeta potential compared with Fe oxide. The overlapping of diffuse layers on Fe/Al oxide-coated quartz and rice roots was confirmed by column leaching experiments. The greater overlapping of diffuse layers on Al oxide and rice roots led to more simultaneous adsorptions of K + and NO 3 - and greater reduction in leachate electric conductivity when the column containing Al oxide-coated quartz and rice roots was leached with KNO 3 solution, compared with the columns containing rice roots and Fe oxide-coated quartz or quartz. When the KNO 3 solution was replaced with deionized water to flush the columns, more K + and NO 3 - were desorbed from the binary system containing Al oxide-coated quartz and rice roots than from other two binary systems, suggesting that the stronger electrostatic interaction between Al oxide and rice roots promoted the desorption of K + and NO 3 - from the binary system and enhanced overlapping of diffuse layers on these oppositely charged surfaces compared with other two binary systems. In conclusion, the overlapping of diffuse layers occurred between positively charged Fe/Al oxides and rice roots, which led to neutralization of opposite charge and affected adsorption and desorption of ions onto and from the charged surfaces of Fe/Al oxides and rice roots.

A novel method to delaminate nitrate-intercalated MgAl layered double hydroxides in water and application in heavy metals removal from waste water.

PubMed

Rahman, Mir Tamzid; Kameda, Tomohito; Kumagai, Shogo; Yoshioka, Toshiaki

2018-07-01

Nitrate-intercalated MgAl layered double hydroxide (LDH) was successfully delaminated in water by a facile and effective method upon reflux at 120 °C for 24 h followed by sonication at 40 °C for 5 h. This process is environmentally friendly since water is the only solvent used. The delaminated nanosheets were characterized by microscopic, spectroscopic, and particle size analyses. The delamination process successfully produced octahedron-shaped single-layer nanosheets 50-150 nm in size. X-ray photoelectron spectroscopy (XPS) data confirmed that the surface elements and their chemical status are consistent with the basic layer of MgAl LDH. The delaminated nanosheets displayed higher adsorption capacity for removing heavy metals from waste water than the original powdered LDH. After treating the waste water, a sharp and intense peak in the X-ray powder diffraction (XRD) pattern of the precipitate confirms the restacking of the LDH nanosheets. Copyright © 2018 Elsevier Ltd. All rights reserved.

Preparation of pH-Responsive Hollow Capsules via Layer-by-Layer Assembly of Exfoliated Layered Double Hydroxide Nanosheets and Polyelectrolytes.

PubMed

Katagiri, Kiyofumi; Shishijima, Yoshinori; Koumoto, Kunihito; Inumaru, Kei

2018-01-01

pH-Responsive smart capsules were developed by the layer-by-layer assembly with a colloidtemplating technique. Polystyrene (PS) particles were employed as core templates. Acid-soluble inorganic nanosheets were prepared from Mg-Al layered double hydroxide (LDH) by an exfoliation technique. LDH nanosheets and anionic polyelectrolytes were alternatively deposited on PS core particles by the layer-by-layer assembly using electrostatic interaction. Hollow capsules were obtained by the removal of the PS core particles. The hollow capsules obtained thus were collapsed at acidic conditions by dissolution of LDH nanosheets in the hollow shells. The dissolution rate, i.e., the responsiveness of capsule, is tunable according to the strength of acids.

Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

PubMed

Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

2013-01-08

Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

The dynamics of layered and non-layered oscillatory double-diffusive convection

NASA Astrophysics Data System (ADS)

Moll, Ryan D.

Oscillatory double diffusive convection (ODDC) is a double diffusive instability that occurs in fluids that are unstably stratified in temperature and stably stratified in chemical composition. Regions unstable to ODDC are common in the interiors of stars and giant planets, and knowing thermal and compositional transport through these regions is important for stellar and planetary evolution models. Using 3D direct numerical simulations, Rosenblum et al. 2011 first showed that ODDC can either lead to the spontaneous formation of convective layers, or remain in a state dominated by large scale gravity waves. Subsequent studies focused on identifying the conditions for layer formation (Mirouh et al. 2012), and quantifying transport through layered systems (Wood et al. 2013). This document includes 3 works that build on the results of these earlier studies. The subject of the first is transport through non-layered ODDC and shows that in the absence of layered convection, ODDC is dominated by large scale gravity waves that grow to the size of the domain. We find that while these gravity waves induce small amounts of turbulent mixing, turbulent transport through non-layered systems is not significant for the purposes of astrophysical modeling (unlike in layered convection). The second study pertains to ODDC in the presence of Coriolis forces, and shows that rotating systems can be categorized depending on the strength of the rotation. We find that in the slowly rotating regime, the presence of rotation does not significantly affect qualitative behavior, but leads to modest reductions in thermal and compositional transport, while in the fast rotation regime qualitative behaviors are radically different, and systems are dominated by vortices that affect thermal and compositional transport in complex ways. In the final work we study simulations of ODDC at non-layered parameters that are forced into a layered configuration by initial conditions. Our results show that measurements of thermal and compositional transport deviate from values predicted by oft-cited geophysical transport laws.

Characterization of high-purity 82Se-enriched ZnSe for double-beta decay bolometer/scintillation detectors

NASA Astrophysics Data System (ADS)

Silva, B. C.; de Oliveira, R.; Ribeiro, G. M.; Cury, L. A.; Leal, A. S.; Nagorny, S.; Krambrock, K.

2018-02-01

Zinc selenide (ZnSe), when enriched with 82Se isotope, is one of the most promising materials for the construction of a bolometer/scintillation detector to study neutrinoless double beta decay (0νDBD). Because the 0νDBD is a very rare event, a high quantity of high-purity monocrystalline ZnSe is needed, which means high costs. Therefore, the knowledge of the best material parameters, especially the presence of point defects, is essential to make feasible the construction of such a detector. In this work, both the as-grown and thermally annealed ZnSe enriched to 95% with the 82Se isotope grown by the Bridgman technique from high-purity starting materials were characterized by electron paramagnetic resonance (EPR), photo-EPR, neutron activation, photoluminescence, and electrical measurements. It is shown that although thermal annealing increases crystal homogeneity and reduces microcracks, the scintillation efficiency is much better for the as-grown material. The higher scintillation efficiency is due to the presence of donor acceptor pairs in the as-grown material, which are responsible for strong luminescence/scintillation in the red spectral region. By photo-EPR, the donor acceptor pairs are identified as closed VZn - AlZn pairs which are lost during the annealing procedure. Electrical characterization shows that the as-grown material is of good quality as it has high electron mobility at low temperatures. Excellent material parameters for the construction of the bolometer/scintillation detector based on enriched Zn82Se are discussed.

Mechanochemical synthesis of dodecyl sulfate anion (DS-) intercalated Cu-Al layered double hydroxide

NASA Astrophysics Data System (ADS)

Qu, Jun; He, Xiaoman; Lei, Zhiwu; Zhang, Qiwu; Liu, Xinzhong

2017-12-01

Dodecyl sulfate anion (DS-) was successfully intercalated into the gallery space of Cu-Al layered double hydroxides (LDH) by a non-heating mechanochemical route, in which basic cupric carbonate (Cu2(OH)2CO3) and aluminum hydroxide (Al(OH)3) were first dry ground and then agitated in SDS solution under ambient environment. The organics modified Cu-Al LDH showed good adsorption ability toward 2,4-dichlorophenoxyacetic acid (2, 4-D). The prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), CHS elemental analysis and Scanning electron microscopy (SEM). The LDH precursor prepared by ball-milling could directly react with SDS molecules forming a pure phase of DS- pillared Cu-Al LDH, which was not observed with the LDH product through the ion-exchange of DS- at room temperature. The process introduced here may be applied to manufacture other types of organic modified composites for pollutants removal and other applications.

Self-healing Li-Al layered double hydroxide conversion coating modified with aspartic acid for 6N01 Al alloy

NASA Astrophysics Data System (ADS)

Zhang, Caixia; Luo, Xiaohu; Pan, Xinyu; Liao, Liying; Wu, Xiaosong; Liu, Yali

2017-02-01

A self-healing Li-Al layered double hydroxide conversion coating (LCC) modified with aspartic acid (ALCC) was prepared on 6N01 Al alloy for corrosion protection. Scanning electron microscopy (SEM) showed that a compact thin film has been successfully formed on the alloy. X-ray diffraction (XRD) and FT-IR spectra proved that species of aspartic acid anions were successfully intercalated into LCC. Potentiodynamic polarization, electrochemical impedance spectroscopy (EIS) and neutral salt spray (NSS) testing showed that the resultant ALCC could provide effective corrosion protection for the Al alloy. During immersion of the ALCC-coated alloy in 3.5% NaCl solution, new film was formed in the area of artificially introduced scratch, indicating its self-healing capability. XPS results demonstrated that Cl- anions exchange partial Asp anions according to the change content of element on conversion coating. From the above results, the possible mechanism via exchange/self-assembly was proposed to illustrate the phenomenon of self-healing.

Preparation, physicochemical characterisation and magnetic properties of Cu-Al layered double hydroxides with CO 32- and anionic surfactants with different alkyl chains in the interlayer

NASA Astrophysics Data System (ADS)

Trujillano, Raquel; Holgado, María Jesús; Pigazo, Fernando; Rives, Vicente

2006-03-01

Layered double hydroxides with the hydrotalcite-like structure, containing Cu(II) and Al(III) in the layers, and different alkyl sulphonates in the interlayer, have been prepared and characterised by powder X-ray diffraction, FT-IR spectroscopy, differential thermal analysis and thermogravimetric analysis. Their magnetic properties have been also studied. Except for the sample containing octadecanesulphonate in the interlayer, for which an excess of sulphonate exists, pure crystalline phases have been obtained in the other cases. Upon heating, combustion of the organic chain takes place at lower temperature than for the corresponding sodium salts. A two-dimensional antiferromagnetic behaviour is observed at 200 K in all samples containing intercalated sulphonate. The χT value is lower for the samples containing interlayer sulphonates (with layer-layer distances in the 21-31 Å range), than for a carbonate-containing analogue (basal spacing 7.51 Å).

High-temperature chemical and microstructural transformations of an organic-inorganic nanohybrid captopril intercalated Mg-Al layered double hydroxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Hui; Guo Shaohuan; Zou Kang

The thermal evolution of a crystalline organic-inorganic nanohybrid captopril intercalated Mg-Al layered double hydroxide (LDH) [Mg{sub 0.68}Al{sub 0.32}(OH){sub 2}] (C{sub 9}H{sub 13}NO{sub 3}S){sub 0.130}(CO{sub 3}){sub 0.030}.0.53H{sub 2}O obtained by coprecipitation method is studied based upon in situ high-temperature X-ray diffraction, in situ infrared and thermogravimetric analysis coupled with mass spectroscopy analysis. The results reveal that a metastable quasi-interstratified layered nanohybrid involving carbonate-LDH and reoriented less ordered captopril-LDH was firstly observed as captopril-LDH heat-treated between 140 and 230 deg. C. The major decomposition/combustion of interlayer organics occur between 270 and 550 deg. C. A schematic model on chemical and microstructural evolutionmore » of this particular drug-inorganic nanohybrid upon heating in air atmosphere is proposed.« less

Enhancing phosphate adsorption by Mg/Al layered double hydroxide functionalized biochar with different Mg/Al ratios.

PubMed

Li, Ronghua; Wang, Jim J; Zhou, Baoyue; Awasthi, Mukesh Kumar; Ali, Amjad; Zhang, Zengqiang; Gaston, Lewis A; Lahori, Altaf Hussain; Mahar, Amanullah

2016-07-15

Mg/Al ratio plays a significant role for anion adsorption by Mg/Al-layered double hydroxides (Mg/Al-LDHs) modified biochar. In this study, Mg/Al-LDHs biochar with different Mg/Al ratios (2, 3, 4) were prepared by co-precipitation for phosphate removal from aqueous solution. Factors on phosphate adsorption including Mg/Al ratio, pH, and the presence of other inorganic anions were investigated through batch experiments. Increasing Mg/Al ratio in the Mg/Al-LDHs biochar composites generally enhanced phosphate adsorption with Langmuir adsorption maximum calculated at 81.83mg phosphorous (P) per gram of 4:1Mg/Al-LDHs biochar at pH3.0. The adsorption process was best described by the pseudo-second-order kinetic model. Solution pH had greater effects on the phosphate adsorption by Mg/Al LDHs biochar composites with lower Mg/Al ratios. The presence of other inorganic anions decreased the phosphate adsorption efficiency in the order of F(-) > SO4(2-) > NO2(-) >Cl(-). Phosphate adsorption mechanism involves ion exchange, electrostatic attraction and surface inner-sphere complex formation. Overall, Mg/Al-LDHs biochar composites offer a potential alternative of carbon-based adsorbent for phosphate removal from aqueous solution. Copyright © 2016 Elsevier B.V. All rights reserved.

Structural, electrical and optical properties of Al-Sn codoped ZnO transparent conducting layer deposited by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Bedia, A.; Bedia, F. Z.; Aillerie, M.; Maloufi, N.

2017-11-01

Low cost Al-Sn codoped ZnO (ATZO) Transparent Conductive Oxide films were deposited by spray pyrolysis on glass substrate. The influence of Al-Sn codoping on the structural, optical and electrical properties of ZnO thin films was studied by comparing the same properties obtained in undoped ZnO, Al doped ZnO (AZO) and Sn doped ZnO (TZO) thin films. The so-obtained films crystallized in hexagonal wurtzite structure. The morphology and structural defects have been investigated by both High resolution Field Effect Scanning Electron Microscopy (FE-SEM) and Raman spectroscopy at 532 nm excitation source. In the visible region, the undoped and doped films show an average transmittance of the order of 85%, while for ATZO thin film, it is of the order of 72%, which points out a degradation of the optical properties due to the co-doping. The optical band gap of ATZO thin film achieves 3.31eV and this shift, compared to the referred samples is attributed to the Burstein-Moss (BM) and band gap narrowing (BGN) opposite effects which is due to the increase of the carrier concentration in degenerate semiconductors. Within all the samples, the ATZO thin film exhibits the lowest electrical resistivity of 4.56 × 10-3 Ωcm with a Hall mobility equal to 2.13 cm2 V-1s-1, and the highest carrier concentration of 6.41 × 1020 cm-3. The performance of ATZO transparent conductive oxide film are determined by its figure of merit (φTC), found equal to 1.69 10-4 Ω-1, which is a suitable value for potentially high-performance solar cell applications.

Ultra-violet absorption induced modifications in bulk and nanoscale electrical transport properties of Al-doped ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata, E-mail: tsom@iopb.res.in

Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (∼10{sup 20 }cm{sup −3}). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity ofmore » an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.« less

Self-assembly preparation of SiO2@Ni-Al layered double hydroxide composites and their enhanced electrorheological characteristics

PubMed Central

Ji, Xuqiang; Zhang, Wenling; Shan, Lei; Tian, Yu; Liu, Jingquan

2015-01-01

The core-shell structured SiO2@Ni-Al layered double hydroxide (LDH) composites were prepared via self-assembly of Ni-Al LDH on the surface of SiO2 spheres. Only coating a layer of ultrathin Ni-Al LDH sheet, the resulting SiO2@Ni-Al LDH composites exhibit significantly enhanced electrorheological (ER) characteristics compared to conventional bare SiO2 spheres. The monodispersed SiO2 spheres with average diameters of 260 nm were synthesized by the hydrolysis of tetraethyl orthosilicate (TEOS), while the shell part, Ni-Al LDH sheet was prepared by the hydrothermal procedure. The morphology of the samples was investigated via scanning transmission electron microscopy (STEM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The structure of the samples was characterized by X-ray diffraction (XRD). The species and distribution of elements in samples were confirmed by X-ray photoelectron spectroscopy (XPS), Energy dispersive analysis of X-ray (EDX) and elemental mapping in STEM. Subsequently, the ER characteristics of the composites dispersed in insulating oil were characterized by a rotational rheometer. The electric field-stimulated rheological performances (yield stress, viscosity, modulus, etc.) were observed under an external electric field, which is different from the Newtonian state in the free electric field. PMID:26670467

Self-assembly preparation of SiO2@Ni-Al layered double hydroxide composites and their enhanced electrorheological characteristics

NASA Astrophysics Data System (ADS)

Ji, Xuqiang; Zhang, Wenling; Shan, Lei; Tian, Yu; Liu, Jingquan

2015-12-01

The core-shell structured SiO2@Ni-Al layered double hydroxide (LDH) composites were prepared via self-assembly of Ni-Al LDH on the surface of SiO2 spheres. Only coating a layer of ultrathin Ni-Al LDH sheet, the resulting SiO2@Ni-Al LDH composites exhibit significantly enhanced electrorheological (ER) characteristics compared to conventional bare SiO2 spheres. The monodispersed SiO2 spheres with average diameters of 260 nm were synthesized by the hydrolysis of tetraethyl orthosilicate (TEOS), while the shell part, Ni-Al LDH sheet was prepared by the hydrothermal procedure. The morphology of the samples was investigated via scanning transmission electron microscopy (STEM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The structure of the samples was characterized by X-ray diffraction (XRD). The species and distribution of elements in samples were confirmed by X-ray photoelectron spectroscopy (XPS), Energy dispersive analysis of X-ray (EDX) and elemental mapping in STEM. Subsequently, the ER characteristics of the composites dispersed in insulating oil were characterized by a rotational rheometer. The electric field-stimulated rheological performances (yield stress, viscosity, modulus, etc.) were observed under an external electric field, which is different from the Newtonian state in the free electric field.

Mechano-hydrothermal preparation of Li-Al-OH layered double hydroxides

NASA Astrophysics Data System (ADS)

Zhang, Fengrong; Hou, Wanguo

2018-05-01

A mechano-hydrothermal (MHT) method was used to synthesize Li-Al-OH layered double hydroxides (LDHs) from LiOH·H2O, Al(OH)3 and H2O as starting materials. A two-step synthesis was conducted, that is, Al(OH)3 was milled for 1 h, followed by hydrothermal treatment with LiOH·H2O solution. Effects of the LiOH/Al(OH)3 molar ratio (RLi/Al) and hydrothermal temperature (Tht) on the crystallinity, morphology, and composition of the product were examined. The resulting LDHs were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, Fourier transform infrared, and elemental analyses. The results showed that pre-milling plays a key role in the LDH formation during subsequent hydrothermal treatment. The Li/Al molar ratio of the obtained LDHs keeps constant at 0.5, independent from theRLi/Al (0.5-5.0) in the starting materials. An increase in the Tht (20-80 °C) can enhance the crystallinity and morphology regularity of the products. The so-obtained Li-Al-OH LDHs exhibit high crystallinity and well-dispersity, which may have wider applications than the aggregate ones obtained using conventional mechanochemical and Li+-imbibition methods.

Tribological Behavior of Al-Cr Coating Obtained by Dgpsm and IIP Composite Technology

NASA Astrophysics Data System (ADS)

Luo, Xixi; Yao, Zhengjun; Zhang, Pingze; Zhou, Keyin; Chen, Yu; Tao, Xuewei

An Al-Cr composite alloyed layer composed of an Al enriched layer, a Cr enriched layer and a transition layer from the surface to the bulk along the cross-section was deposited on a 45# steel substrate by composite technology, where Cr was deposited using double glow plasma surface metallurgy (DGPSM), and Al was then implanted by ion implantation (IIP) to achieve higher micro-hardness and excellent abrasive resistance. The composite alloyed layer is approximately 5μm, and as metallurgical adherence to the substrate. The phases are Al8Cr5, Fe2AlCr, Cr23C6, Cr (Al) and Fe (Cr, Al) solid solution. The wear resistance tests were performed under various rotational speed (i.e. 280, 560 and 840r/min) with silicon nitride balls as the counterface material at ambient temperature. The Al-Cr composite alloyed layer exhibits excellent wear resistance when the speed is 280r/min with a friction coefficient as low as 0.3, which is attributed to Al8Cr5 in the Al implanted layer that withstands abrasive wear. Better wear resistance (friction coefficient: 0.254) at 560r/min is resulted from the formation of a high micro-hardness zone, and an oxidation layer with lubrication capacity. In addition, the composite alloyed layer suffers severe oxidative wear and adhesive wear at 840r/min due to the increment of the frictional heating. When compared to the 45# steel substrate, the enhanced wear resistance of the Al-Cr composite alloyed layer demonstrates the viable method developed in this work.

Characterization of the ScAlMgO4 cleaving layer by X-ray crystal truncation rod scattering

NASA Astrophysics Data System (ADS)

Hanada, Takashi; Tajiri, Hiroo; Sakata, Osami; Fukuda, Tsuguo; Matsuoka, Takashi

2018-05-01

ScAlMgO4—easily cleaved in c-plane—forms a natural superlattice structure of a ScO2 layer and two Al0.5Mg0.5O layers stacking along c-axis. ScAlMgO4 is one of the RAMO4-type layered multicomponent oxides and a promising lattice-matching substrate material for InGaN and ZnO. Identification of the topmost layer and the surface atomic structure of the cleaved ScAlMgO4 (0001) are investigated by the X-ray crystal truncation rod scattering method. It is confirmed that ScAlMgO4 is cleaved between the two Al0.5Mg0.5O layers. The two parts separated at this interlayer are inversion symmetric to each other and without surface charge. This prevents parallel-plate-capacitor-like electrostatic force during the cleavage. Two different mechanisms are proposed for the two types of cleavage caused by the impact of a wedge and by the in-plane stress due to an overgrown thick GaN film. It is also revealed that about 10%-20% of the topmost O atoms are desorbed during a surface cleaning at 600 °C in ultra-high vacuum. Surface observations using reflection high-energy electron diffraction are possible only after the high-temperature cleaning because the electrical conduction caused by the oxygen deficiency prevents the charge-up of the insulating sample.

Reversible hydration and aqueous exfoliation of the acetate-intercalated layered double hydroxide of Ni and Al: Observation of an ordered interstratified phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manohara, G.V.; Vishnu Kamath, P., E-mail: vishnukamath8@hotmail.com; Milius, Wolfgang

2012-12-15

Acetate-intercalated layered double hydroxides (LDHs) of Ni and Al undergo reversible hydration in the solid state in response to the ambient humidity. The LDH with a high layer charge (0.33/formula unit) undergoes facile hydration in a single step, whereas the LDH with a lower layer charge (0.24/formula unit) exhibits an ordered interstratified intermediate, comprising the hydrated and dehydrated layers stacked alternatively. This phase, also known as the staged S-2 phase, coexists with the end members suggesting the existence of a solution-type equilibrium between the S-2 phase and the end members of the hydration cycle. These LDHs also undergo facile aqueousmore » exfoliation into 2-5 nm-thick tactoids with a radial dimension of 0.2-0.5 {mu}m. - Graphical abstract: Schematic of the hydrated, dehydrated and interstratified phases observed during the hydration-dehydration of Ni/Al-CH{sub 3}COO LDH. Highlights: Black-Right-Pointing-Pointer Ni/Al-acetate LDHs were synthesized by HPFS method by hydrolysis of acetamide. Black-Right-Pointing-Pointer Intercalated acetate ion shows reversible hydration with variation in humidity. Black-Right-Pointing-Pointer An ordered interstratified phase was observed during hydration/dehydration cycle. Black-Right-Pointing-Pointer A solution type equilibrium is observed between hydration-dehydration phases. Black-Right-Pointing-Pointer These LDHs undergo facile aqueous exfoliation.« less

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Piezoelectric-Induced Triboelectric Hybrid Nanogenerators Based on the ZnO Nanowire Layer Decorated on the Au/polydimethylsiloxane-Al Structure for Enhanced Triboelectric Performance.

PubMed

Jirayupat, Chaiyanut; Wongwiriyapan, Winadda; Kasamechonchung, Panita; Wutikhun, Tuksadon; Tantisantisom, Kittipong; Rayanasukha, Yossawat; Jiemsakul, Thanakorn; Tansarawiput, Chookiat; Liangruksa, Monrudee; Khanchaitit, Paisan; Horprathum, Mati; Porntheeraphat, Supanit; Klamchuen, Annop

2018-02-21

Here, we demonstrate a novel device structure design to enhance the electrical conversion output of a triboelectric device through the piezoelectric effect called as the piezo-induced triboelectric (PIT) device. By utilizing the piezopotential of ZnO nanowires embedded into the polydimethylsiloxane (PDMS) layer attached on the top electrode of the conventional triboelectric device (Au/PDMS-Al), the PIT device exhibits an output power density of 50 μW/cm 2 , which is larger than that of the conventional triboelectric device by up to 100 folds under the external applied force of 8.5 N. We found that the effect of the external piezopotential on the top Au electrode of the triboelectric device not only enhances the electron transfer from the Al electrode to PDMS but also boosts the internal built-in potential of the triboelectric device through an external electric field of the piezoelectric layer. Furthermore, 100 light-emitting diodes (LEDs) could be lighted up via the PIT device, whereas the conventional device could illuminate less than 20 LED bulbs. Thus, our results highlight that the enhancement of the triboelectric output can be achieved by using a PIT device structure, which enables us to develop hybrid nanogenerators for various self-power electronics such as wearable and mobile devices.

In situ study of the electronic structure of atomic layer deposited oxide ultrathin films upon oxygen adsorption using ambient pressure XPS

DOE PAGES

Mao, Bao-Hua; Crumlin, Ethan; Tyo, Eric C.; ...

2016-07-21

In this work, ambient pressure X-ray photoelectron spectroscopy (APXPS) was used to investigate the effect of oxygen adsorption on the band bending and electron affinity of Al 2O 3, ZnO and TiO 2 ultrathin films (~1 nm in thickness) deposited on a Si substrate by atomic layer deposition (ALD). Upon exposure to oxygen at room temperature (RT), upward band bending was observed on all three samples, and a decrease in electron affinity was observed on Al 2O 3 and ZnO ultrathin films at RT. At 80°C, the magnitude of the upward band bending decreased, and the change in the electronmore » affinity vanished. These results indicate the existence of two surface oxygen species: a negatively charged species that is strongly adsorbed and responsible for the observed upward band bending, and a weakly adsorbed species that is polarized, lowering the electron affinity. Based on the extent of upward band bending on the three samples, the surface coverage of the strongly adsorbed species exhibits the following order: Al 2O 3 > ZnO > TiO 2. This finding is in stark contrast to the trend expected on the surface of these bulk oxides, and highlights the unique surface activity of ultrathin oxide films with important implications, for example, in oxidation reactions taking place on these films or in catalyst systems where such oxides are used as a support material.« less

Synthesis and characterization of sulfate and dodecylbenzenesulfonate intercalated zinc iron layered double hydroxides by one-step coprecipitation route

NASA Astrophysics Data System (ADS)

Zhang, Hui; Wen, Xing; Wang, Yingxia

2007-05-01

Inorganic sulfate- and organic dodecylbenzenesulfonate (DBS)-intercalated zinc-iron layered double hydroxides (LDHs) materials were prepared by one-step coprecipitation method from a mixed salt solutions containing Zn(II), Fe(II) and Fe(III) salts. The as-prepared samples have been characterized by X-ray powder diffraction (XRD), Fourier-transform infrared spectroscopy (FT-IR), low-temperature nitrogen adsorption, scanning electron microscopy (SEM), inductively coupled plasma emission spectroscopy (ICP), and Mössbauer spectroscopy (MS). The XRD analyses demonstrate the typical LDH-like layered structural characteristics of both products. The room temperature MS results reveal the characteristics of both the Fe(II) and Fe(III) species for SO 42--containing product, while only the Fe(III) characteristic for DBS-containing one. The combination characterization results and Rietveld analysis illustrate that the SO 42--containing product possesses the Green Rust two (GR2)-like crystal structure with an approximate chemical composition of [Zn 0.435·Fe II0.094·Fe III0.470·(OH) 2]·(SO 42-) 0.235·1.0H 2O, while the DBS-containing one exhibits the common LDH compound-like structure. The contact angle measurement indicates the evident hydrophobic properties of DBS-containing nanocomposite, compared with SO 42--containing product, due to the modification of the internal and external surface of LDHs by the organic hydrophobic chain of DBS.

Hybrid magnetic materials formed by ferritin intercalated into a layered double hydroxide

NASA Astrophysics Data System (ADS)

Clemente-León, Miguel; Coronado, Eugenio; Primo, Vicent; Ribera, Antonio; Soriano-Portillo, Alejandra

2008-12-01

A hybrid magnetic material formed by ferritin intercalated into a layered double hydroxide (LDH) of Mg and Al (Mg/Al molar ratio 2) is prepared and characterized through powder X-ray diffraction (XRD), thermogravimetric analysis (TGA), Fourier transform infrared (FT-IR) spectroscopy, electron probe microanalysis (EPMA) and high resolution transmission electron microscopy (HRTEM). One observes an enhancement in the thermal stability of the ferritin molecules when they are inserted in the layered material. Magnetic measurements of the hybrid material exhibit the typical superparamagnetic behaviour of the ferritin molecule. On the other hand, the intercalation of ferritin into the LDH guarantees a homogeneous dispersion of the ferritin molecules, which do not aggregate even after calcination of the sample. This feature allows obtaining well-dispersed magnetic metal oxide nanoparticles upon calcination of the hybrid material.

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

NASA Astrophysics Data System (ADS)

Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

2015-09-01

Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Skeparovski, A.; Novkovski, N.; Atanassova, E.; Paskaleva, A.; Lazarov, V. K.

2011-06-01

The electrical behaviour of Al-doped Ta2O5 films on nitrided silicon and implemented in Al-gated MIS capacitors has been studied. The dopant was introduced into the Ta2O5 through its surface by deposing a thin Al layer on the top of Ta2O5 followed by an annealing process. The HRTEM images reveal that the initial double-layer structure of the stacks composed of doped Ta2O5 and interfacial SiON layer undergoes changes during the formation of the Al gate and transforms into a three-layer structure with an additional layer between the Al electrode and the doped Ta2O5. This layer, being a result of reaction between the Al gate and the Al-doped Ta2O5, affects the overall electrical properties of the stacks. Strong charge trapping/detrapping processes have been established in the vicinity of the doped Ta2O5/SiON interface resulting in a large C-V hysteresis effect. The charge trapping also influences the current conduction in the layers keeping the current density level rather low even at high electric fields (J < 10-6 A cm-2 at 7 MV cm-1). By employing a three-layer model of the stack, the permittivity of both, the Al-doped Ta2O5 and the additional layer, has been estimated and the corresponding conduction mechanisms identified.

Universal biomimetic preparation and immobilization of layered double hydroxide films and adsorption behavior

NASA Astrophysics Data System (ADS)

Zhou, Wei; Zhang, Wenpeng; Chen, Zilin

2017-01-01

Preparation and immobilization of layered double hydroxides (LDHs) film onto multiple substrates is important and challenging in functional materials fields by date. In this work, a simple and universal polydopamine (PD)-based layer-by-layer assembly strategy was developed for the immobilization of LDHs film onto surfaces such as polypropylene chip, glass slides and metal coins. The surface of substrates was firstly modified by polydopamine functionalization, and then LDHs film was synthesized via urea method and directly immobilized on the PD layer by in situ growing strategy in one step. The PD layer as well as the final LDHs film was characterized by energy dispersive X-ray spectroscopy, scanning electron microscope, infrared spectroscopy, X-ray diffraction pattern and X-ray photoelectron spectra. It has been demonstrated the formation of the dense and homogeneous nanoscaled LDHs film with 400 nm thickness. Adsorption behavior of the fabricated NiAl-LDHs film toward anionic dyes and pharmaceuticals was further assessed. To demonstrate their extensive application, fast and high efficient adsorption of anionic dyes and pharmaceuticals was achieved by NiAl-LDHs-modified polypropylene centrifugal tube.

Highly Selective and Efficient Removal of Heavy Metals by Layered Double Hydroxide Intercalated with the MoS4(2-) Ion.

PubMed

Ma, Lijiao; Wang, Qing; Islam, Saiful M; Liu, Yingchun; Ma, Shulan; Kanatzidis, Mercouri G

2016-03-02

The MoS4(2-) ion was intercalated into magnesium-aluminum layered double hydroxide (MgAl-NO3-LDH) to produce a single phase material of Mg0.66Al0.34(OH)2(MoS4)0.17·nH2O (MgAl-MoS4-LDH), which demonstrates highly selective binding and extremely efficient removal of heavy metal ions such as Cu(2+), Pb(2+), Ag(+), and Hg(2+). The MoS4-LDH displays a selectivity order of Co(2+), Ni(2+), Zn(2+) < Cd(2+) ≪ Pb(2+) < Cu(2+) < Hg(2+) < Ag(+) for the metal ions. The enormous capacities for Hg(2+) (∼500 mg/g) and Ag(+) (450 mg/g) and very high distribution coefficients (Kd) of ∼10(7) mL/g place the MoS4-LDH at the top of materials known for such removal. Sorption isotherm for Ag(+) agrees with the Langmuir model suggesting a monolayer adsorption. It can rapidly lower the concentrations of Cu(2+), Pb(2+), Hg(2+), and Ag(+) from ppm levels to trace levels of ≤1 ppb. For the highly toxic Hg(2+) (at ∼30 ppm concentration), the adsorption is exceptionally rapid and highly selective, showing a 97.3% removal within 5 min, 99.7% removal within 30 min, and ∼100% removal within 1 h. The sorption kinetics for Cu(2+), Ag(+), Pb(2+), and Hg(2+) follows a pseudo-second-order model suggesting a chemisorption with the adsorption mechanism via M-S bonding. X-ray diffraction patterns of the samples after adsorption demonstrate the coordination and intercalation structures depending on the metal ions and their concentration. After the capture of heavy metals, the crystallites of the MoS4-LDH material retain the original hexagonal prismatic shape and are stable at pH ≈ 2-10. The MoS4-LDH material is thus promising for the remediation of heavy metal polluted water.

Tungstocobaltate-pillared layered double hydroxides: Preparation, characterization, magnetic and catalytic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei Xiaocui; Baicheng College of Higher Medicine, Baicheng 137000; Fu Youzhi

2008-06-15

A new polyoxometalate anion-pillared layered double hydroxide (LDH) was prepared by aqueous ion exchange of a Mg-Al LDH precursor in nitrate form with the tungstocobaltate anions [CoW{sub 12}O{sub 40}]{sup 5-}. The physicochemical properties of the product were characterized by the methods of powder X-ray diffraction, elemental analysis, infrared spectroscopy, thermogravimetric analysis and cyclic voltammetry. It was confirmed that [CoW{sub 12}O{sub 40}]{sup 5-} was intercalated between the brucite-type layers of the LDHs without a change in the structure. Magnetic measurement shows the occurrence of antiferromagnetic interactions between the magnetic centers. The investigation of catalytic performance for this sample exhibits high activitymore » for the oxidation of benzaldehyde by hydrogen peroxide. - Graphical abstract: A tungstocobaltate anion [CoW{sub 12}O{sub 40}]{sup 5-} pillared layered double hydroxide (LDH) was prepared by aqueous ion exchange with a Mg-Al LDH precursor in nitrate form, demonstrating that [CoW{sub 12}O{sub 40}]{sup 5-} was intercalated between the brucite-type layers of the LDHs without change in structure. Magnetic measurement shows the occurrence of antiferromagnetic interactions between the magnetic centers. The investigation of catalytic performance for this sample exhibits high activity for the oxidation of benzaldehyde by hydrogen peroxide.« less

a Facile Synthesis of Fully Porous Tazo Composite and its Remarkable Gas Sensitive Performance

NASA Astrophysics Data System (ADS)

Liang, Dongdong; Liu, Shimin; Wang, Zhinuo; Guo, Yu; Jiang, Weiwei; Liu, Chaoqian; Ding, Wanyu; Wang, Hualin; Wang, Nan; Zhang, Zhihua

The composite of a nanocrystalline SnO2 thick film deposited on an Al-doped ZnO ceramic substrate was firstly proposed. This study also provided a simple, fast and cost effective method to prepare SnO2 thick film and Al-doped ZnO ceramic as well as the final composite. The crystal structure, morphology, composition, pore size distribution and gas sensitivity of the composite were investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, Barrett-Joyner-Halenda analysis and gas sensitive measurement system. Results indicated that the composite was fully porous consisted of SnO2, ZnO and ZnAl2O4 crystal phases. The macrosized pores generated in the composite could enhance the gas infiltration into the sensing layers effectively. In this way, combining a high gas-transporting-capability and a nanocrystalline SnO2 thick film, the composite showed very impressive performance. The gas sensitivity of the composite was high enough for ethanol vapor with different concentrations, which was comparable to other kinds of reported SnO2 gas sensors, while showing two straight lines with a turning point at 1000ppm. Finally, the gas sensitive mechanism was proposed based on the microstructure and composition of the composite.

A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon

2017-08-01

We developed NiZn/(Ta/)Ni ohmic contacts to replace expensive AuBe/Au contacts commonly used in high-efficiency AlGaInP-based light-emitting diodes (LEDs), and compared the electrical properties of the two contact types. Unlike the AuBe/Au (130 nm/100 nm) contact, the NiZn/Ta/Ni (130 nm/20 nm/100 nm) contact shows improved electrical properties after being annealed at 500°C, with a contact resistivity of 5.2 × 10-6 Ω cm2. LEDs with the NiZn/Ta/Ni contact exhibited a 4.4% higher output power (at 250 mW) than LEDs with the AuBe/Au contact. In contrast to the trend for the AuBe/Au contact, the Ga 2 p core level for the NiZn/Ta/Ni contact shifted toward lower binding energies after being annealed at 500°C. Auger electron spectroscopy (AES) depth profiles showed that annealing the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, whereas in the NiZn/Ta/Ni samples, Zn atoms indiffused into the GaP layer. The annealing-induced electrical degradation and ohmic contact formation mechanisms are described and discussed on the basis of the results of x-ray photoemission spectroscopy and AES.

Ethanol Sensor of CdO/Al2O3/CeO2 Obtained from Ce-DOPED Layered Double Hydroxides with High Response and Selectivity

NASA Astrophysics Data System (ADS)

Xu, Dongmei; Guan, Meiyu; Xu, Qinghong; Guo, Ying; Wang, Yao

2013-04-01

In this paper, Ce-doped CdAl layered double hydroxide (LDH) was first synthesized and the derivative CdO/Al2O3/CeO2 composite oxide was prepared by calcining Ce-doped CdAl LDH. The structure, morphology and chemical state of the Ce doped CdAl LDH and CdO/Al2O3/CeO2 were also investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), solid state nuclear magnetic resonance (SSNMR), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The gas sensing properties of CdO/Al2O3/CeO2 to ethanol were further studied and compared with CdO/Al2O3 prepared from CdAl LDH, CeO2 powder as well as the calcined Ce salt. It turns out that CdO/Al2O3/CeO2 sensor shows best performance in ethanol response. Besides, CdO/Al2O3/CeO2 possesses short response/recovery time (12/72 s) as well as remarkable selectivity in ethanol sensing, which means composite oxides prepared from LDH are very promising in gas sensing application.

Modification of back electrode with WO3 layer and its effect on Cu2ZnSn(S,Se)4-based solar cells

NASA Astrophysics Data System (ADS)

Shi, Kun; Yao, Bin; Li, Yongfeng; Ding, Zhanhui; Deng, Rui; Sui, Yingrui; Zhang, Zhenzhong; Zhao, Haifeng; Zhang, Ligong

2018-01-01

In the present work, we designed and prepared Cu2ZnSn(S,Se)4 (CZTSSe)-based solar cells with a new structure of Al/ITO/ZnO/CdS/CZTSSe/WO3/Mo/SLG (S1-5) by depositing about 5-nm-thick WO3 layer with monoclinic structure on the back electrode Mo/SLG of solar cells with the convention structure of Al/ITO/ZnO/CdS/CZTSSe/Mo/SLG (S2), with the aim of improving the power conversion efficiency (PCE) of CZTSSe-based solar cells. It is found that the average open circuit voltage (Voc) increases from 346.7 mV of the S2 cells to 400.9 mV of the S1-5 cells, the average short circuit current density (Jsc) from 26.4 mA/cm2 to 32.1 mA/cm2 and the filling factor (FF) from 33.8 to 40.0 by addition of the WO3 layer, which results in that the average PCE increases from 3.10% of the S2 cells to 5.14% of the S1-5 cells. The average increasing percent of the PCE is 65.8%. The increase in Voc, Jsc and FF of the S1-5 cells compared to the S2 cells is attributed to that the WO3 layer prevent the Se coming from Se ambient and CZTSSe to react with the Mo to form MoSe2 and other second phases, which makes the shunt resistance (Rsh) of the S1-5 increase and the series resistance (Rs) and reverse saturation current density (J0) decrease compared to the S2 cells. The decreased J0 is main factor of improvement of the PCE. A mechanism of influence of the Rsh, Rs and J0 on the PCE is also revealed. Our result demonstrates that addition of the WO3 layer with a reasonable thickness can be a promising technical route of improving the PCE of the CZTSSe-based solar cell.

Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Manh-Hung; Tian, Liang; Chaker, Ahmad

ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural andmore » chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.« less

Effects of Al-Impurity Type on Formation Energy, Crystal Structure, Electronic Structure, and Optical Properties of ZnO by Using Density Functional Theory and the Hubbard-U Method.

PubMed

Wu, Hsuan-Chung; Chen, Hsing-Hao; Zhu, Yu-Ren

2016-08-01

We systematically investigated the effects of Al-impurity type on the formation energy, crystal structure, charge density, electronic structure, and optical properties of ZnO by using density functional theory and the Hubbard-U method. Al-related defects, such as those caused by the substitution of Zn and O atoms by Al atoms (Al s(Zn) and Al s(O) , respectively) and the presence of an interstitial Al atom at the center of a tetrahedron (Al i(tet) ) or an octahedron (Al i(oct) ), and various Al concentrations were evaluated. The calculated formation energy follows the order E f (Al s(Zn) ) < E f (Al i(tet) ) < E f (Al i(oct) ) < E f (Al s(O) ). Electronic structure analysis showed that the Al s(Zn) , Al s(O) , Al i(tet) , and Al i(oct) models follow n -type conduction, and the optical band gaps are higher than that of pure ZnO. The calculated carrier concentrations of the Al s(O) and Al i(tet) /Al i(oct) models are higher than that of the Al s(Zn) model. However, according to the curvature of the band structure, the occurrence of interstitial Al atoms or the substitution of O atoms by Al atoms results in a high effective mass, possibly reducing the carrier mobility. The average transmittance levels in the visible light and ultraviolet (UV) regions of the Al s(Zn) model are higher than those of pure ZnO. However, the presence of an interstitial Al atom within the ZnO crystal reduces transmittance in the visible light region; Al s(O) substantially reduces the transmittance in the visible light and UV regions. In addition, the properties of ZnO doped with various Al s(Zn) concentrations were analyzed.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Method of bonding metals to ceramics

DOEpatents

Maroni, Victor A.

1991-01-01

A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, An and alloys thereof.

Interface reconstruction with emerging charge ordering in hexagonal manganite

PubMed Central

Xu, Changsong; Han, Myung-Geun; Bao, Shanyong; Nan, Cewen; Bellaiche, Laurent

2018-01-01

Multiferroic materials, which simultaneously have multiple orderings, hold promise for use in the next generation of memory devices. We report a novel self-assembled MnO double layer forming at the interface between a multiferroic YMnO3 film and a c-Al2O3 substrate. The crystal structures and the valence states of this MnO double layer were studied by atomically resolved scanning transmission electron microscopy and spectroscopy, as well as density functional theory (DFT) calculations. A new type of charge ordering has been identified within this MnO layer, which also contributes to a polarization along the [001] direction. DFT calculations further establish the occurrence of multiple couplings between charge and lattice in this novel double layer, in addition to the polarization in nearby YMnO3 single layer. The interface reconstruction reported here creates a new playground for emergent physics, such as giant ferroelectricity and strong magnetoelectric coupling, in manganite systems. PMID:29795782

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okita, Koshi; Inaba, Katsuhiko; Yatabe, Zenji; Nakamura, Yusui

2018-06-01

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.

Layering of sustained vortices in rotating stratified fluids

NASA Astrophysics Data System (ADS)

Aubert, O.; Le Bars, M.; Le Gal, P.

2013-05-01

The ocean is a natural stratified fluid layer where large structures are influenced by the rotation of the planet through the Coriolis force. In particular, the ocean Meddies are long-lived anticyclonic pancake vortices of Mediterranean origin evolving in the Atlantic Ocean: they have a saltier and warmer core than the sourrounding oceanic water, their diameters go up to 100 km and they can survive for 2 to 3 years in the ocean. Their extensive study using seismic images revealed finestructures surrounding their core (Biescas et al., 2008; Ruddick et al., 2009) corresponding to layers of constant density which thickness is about 40 m and horizontal extent is more than 10 km. These layers can have different origins: salt fingers from a double-diffusive instabilities of salt and heat (Ruddick & Gargett, 2003), viscous overturning motions from a double-diffusive instabilities of salt and momentum (McIntyre, 1970) or global modes of the quasi-geostrophic instability (Nguyen et al., 2011)? As observed by Griffiths & Linden (1981), sustained laboratory anticyclonic vortices created via a continuous injection of isodense fluid in a rotating and linearly stratified layer of salty water are quickly surrounded by layers of constant density. In the continuity of their experiments, we systematically investigated the double-diffusive instability of McIntyre by varying the Coriolis parameter f and the buoyancy frequency N of the background both in experiments and in numerical simulations, and studied the influence of the Schmidt number in numerical simulations. Following McIntyre's approach, typical length and time scales of the instability are well described by a linear stability analysis based on a gaussian model that fits both laboratory and oceanic vortices. The instability appears to be favoured by high Rossby numbers and ratios f/N. We then apply these results to ocean Meddies and conclude about their stability.

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Hjort, Filip; Hashemi, Ehsan; Adolph, David; Ive, Tommy; Haglund, Àsa

2017-02-01

III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch and high refractive index contrast, which could yield a mirror with a broad stopband and a high peak reflectivity using less than 20 DBR-pairs. A crack-free ZnO/GaN DBR was grown by hybrid plasma-assisted molecular beam epitaxy. The ZnO layers were approximately 20 nm thick and had an electron concentration of 1×1019 cm-3, while the GaN layers were 80-110 nm thick with an electron concentration of 1.8×1018 cm-3. In order to measure the resistance, mesa structures were formed by dry etching through the top 3 DBR-pairs and depositing non-annealed Al contacts on the GaN-layers at the top and next to the mesas. The measured specific series resistance was dominated by the lateral and contact contributions and gave an upper limit of 10-3Ωcm2 for the vertical resistance. Simulations show that the ZnO electron concentration and the cancellation of piezoelectric and spontaneous polarization in strained ZnO have a large impact on the vertical resistance and that it could be orders of magnitudes lower than what was measured. This is the first report on electrically conductive ZnO/GaN DBRs and the upper limit of the resistance reported here is close to the lowest values reported for III-nitride-based DBRs.

Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers.

PubMed

Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

2010-12-21

The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 10⁹ Mcps mm⁻² in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (≤ 10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous. The possible choices are, however, quite limited, since only 'mature' materials, which operate at room temperature and can be manufactured reliably should reasonably be considered. Since GaAs is still known to cause reliability problems, the simplest choice is Si, however with the drawback of strong Compton scatter which can cause considerable inter-pixel cross-talk. To investigate the potential and the problems of Si in a multi-layer detector, in this paper the combination of top detector layers made of Si with lower layers made of Cd[Zn]Te is studied by using Monte Carlo simulated detector responses. It is found that the inter-pixel cross-talk due to Compton scatter is indeed very high; however, with an appropriate cross-talk correction scheme, which is also described, the negative effects of cross-talk are shown to be removed to a very large extent.

Simultaneous increase in strength and ductility by decreasing interface energy between Zn and Al phases in cast Al-Zn-Cu alloy.

PubMed

Han, Seung Zeon; Choi, Eun-Ae; Park, Hyun Woong; Lim, Sung Hwan; Lee, Jehyun; Ahn, Jee Hyuk; Hwang, Nong-Moon; Kim, Kwangho

2017-09-22

Cast-Al alloys that include a high amount of the second element in their matrix have comparatively high strength but low ductility because of the high volume fraction of strengthening phases or undesirable inclusions. Al-Zn alloys that have more than 30 wt% Zn have a tensile strength below 300 MPa, with elongation under 5% in the as-cast state. However, we found that after substitution of 2% Zn by Cu, the tensile strength of as-cast Al-Zn-Cu alloys was 25% higher and ductility was four times higher than for the corresponding Al-35% Zn alloy. Additionally, for the Al-43% Zn alloy with 2% Cu after 1 h solution treatment at 400 °C and water quenching, the tensile strength unexpectedly reached values close to 600 MPa. For the Al-33% Zn alloy with 2% Cu, the tensile strength was 500 MPa with 8% ductility. The unusual trends of the mechanical properties of Al-Zn alloys with Cu addition observed during processing from casting to the subsequent solution treatment were attributed to the precipitation of Zn in the Al matrix. The interface energy between the Zn particles and the Al matrix decreased when using a solution of Cu in Zn.

Obtention of low oxidation states of copper from Cu 2+-Al 3+ layered double hydroxides containing organic sulfonates in the interlayer

NASA Astrophysics Data System (ADS)

Trujillano, Raquel; Holgado, María Jesús; Rives, Vicente

2009-03-01

A series of hydrotalcite-type compounds containing Cu(II) and Al(III) in the layers, and carbonate or different alkylsulfonates in the interlayer, have been prepared and studied. Calcination of these solids gives rise to formation of metallic copper and Cu 2+ and Cu + oxides or sulfates, depending on the calcination temperature and on the precise nature of the interlayer alkylsulfonate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gries, K. I.; Vogel, S.; Straubinger, R.

The self-assembled formation of ordered, vertically stacked rocksalt/wurtzite Mg{sub x}Zn{sub 1−x}O heterostructures by planar phase separation is shown. These heterostructures form quasi “natural” two-dimensional hetero-interfaces between the different phases upon annealing of MgO-oversaturated wurtzite Mg{sub x}Zn{sub 1−x}O layers grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. The optical absorption spectra show a red shift simultaneous with the appearance of a cubic phase upon annealing at temperatures between 900 °C and 1000 °C. Transmission electron microscopy reveals that these effects are caused by phase separation leading to the formation of a vertically ordered rock salt/wurtzite heterostructures. To explain these observations, wemore » suggest a phase separation epitaxy model that considers this process being initiated by the formation of a cubic (Mg,Zn)Al{sub 2}O{sub 4} spinel layer at the interface to the sapphire substrate, acting as a planar seed for the epitaxial precipitation of rock salt Mg{sub x}Zn{sub 1−x}O. The equilibrium fraction x of magnesium in the resulting wurtzite (rock salt) layers is approximately 0.15 (0.85), independent of the MgO content of the as-grown layer and determined by the annealing temperature. This model is confirmed by photoluminescence analysis of the resulting layer systems after different annealing temperatures. In addition, we show that the thermal annealing process results in a significant reduction in the density of edge- and screw-type dislocations, providing the possibility to fabricate high quality templates for quasi-homoepitaxial growth.« less

Microstructure and calorimetric behavior of laser welded open cell foams in CuZnAl shape memory alloy

NASA Astrophysics Data System (ADS)

Biffi, Carlo Alberto; Previtali, Barbara; Tuissi, Ausonio

Cellular shape memory alloys (SMAs) are very promising smart materials able to combine functional properties of the material with lightness, stiffness, and damping capacity of the cellular structure. Their processing with low modification of the material properties remains an open question. In this work, the laser weldability of CuZnAl SMA in the form of open cell foams was studied. The cellular structure was proved to be successfully welded in lap joint configuration by using a thin plate of the same alloy. Softening was seen in the welded bead in all the investigated ranges of process speed as well as a double stage heat affected zone was identified due to different microstructures; the martensitic transformation was shifted to higher temperatures and the corresponding peaks were sharper with respect to the base material due to the rapid solidification of the material. Anyways, no compositional variations were detected in the joints.

Mesoporous mixed metal oxides derived from P123-templated Mg-Al layered double hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Jun, E-mail: zhqw1888@sohu.co; College of Chemical Engineering, Harbin Institute of Technology, Harbin 150001; Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, 150001

2010-11-15

We report the preparation of mesoporous mixed metal oxides (MMOs) through a soft template method. Different amounts of P123 were used as structure directing agent to synthesize P123-templated Mg-Al layered double hydroxides (LDHs). After calcination of as-synthesized LDHs at 500 {sup o}C, the ordered mesopores were obtained by removal of P123. The mesoporous Mg-Al MMOs fabricated by using 2 wt% P123 exhibited a high specific surface area of 108.1 m{sup 2}/g, and wide distribution of pore size (2-18 nm). An investigation of the 'memory effect' of the mesoporous MMOs revealed that they were successfully reconstructed to ibuprofen intercalated LDHs havingmore » different gallery heights, which indicated different intercalation capacities. Due to their mesoporosity these unique MMOs have particular potential as drug or catalyst carriers. - Graphical abstract: Ordered mesoporous Mg-Al MMOs can be obtained through the calcination of P123-templated Mg-Al-CO{sub 3} LDHs. The pore diameter is 2.2 nm. At the presence of ibuprofen, the Mg-Al MMOs can recover to Mg-Al-IBU LDHs, based on its 'remember effect'. Display Omitted« less

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

PubMed

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

Investigation of the superconducting proximity effect (SPE) and magnetic dead layers (MDL) in thin film double layers

NASA Astrophysics Data System (ADS)

Tateishi, Go

When a thin superconducting film (S film) is condensed onto a thin normal conducting film (N film), the first layers of the S film loose their superconductivity. This phenomenon is generally called the "superconducting proximity effect (SPE)". As an investigation of SPE we focus on the transition temperature of extremely thin NS double layers in the thin regime. Normal metal is condensed on top of insulating Sb, then Pb is deposited on it in small steps. The transition temperature is plotted in an inverse Tc-reduction 1/Delta T c =1/(Ts - Tc) versus Pb thickness graph. To compare our experimental results with the theoretical prediction, a numerical calculation of the SN double layer is performed by our group using the linear gap equation. As a result, there are large discrepancies between the experimental and theoretical results generally. The results of the NS double layers can be divided into three groups in terms of their discrepancies between experiment and theory.(1) Non-coupling (Tc = 0 K): N= Mg, Ag, Cu, Au. There are large deviations between experiment and theory by a factor to the order of 2.5. (2) Weak coupling (Tc is low (< 2.5 K)) : N=Cd, Zn, Al. Deviation is present, but only by a factor of 1.5. (3) Intermediate coupling (T c is around half of Pb's (≈ 4.5 K)) : N=In, Sn. The experimental results agree with the theory. Next, we examine the detection of the magnetic dead layer (MDL) of Ni thin films in terms of the anomalous Hall effect (AHE) with several non-magnetic metal substrates. In our results, when Ni film is contact with a polyvalent metal substrate film, the sandwich film has around 2 to 3.5 at.lay. of magnetic dead layers. However we have not observed the magnetic dead Ni layers with the alkali and noble metal substrate film. Finally, we revisit the Pb/Ni system to measure the magnetic scattering of Ni with the method of Weak Localization (WL) to compare with the dephasing rate due to the Tc-reduction. In this series, we use only very thin Pb films between 1.3 and 5 at.lay. deposited on top of the Ag substrate with about 37 at.lay. thickness, because we make the Ag substrate suppress the superconductivity of the extremely thin Pb film with the SPE and avoid the Azlamazov-Larkin fluctuations. After comparison, it becomes clear that the dephasing rate from the Tc-reduction method is much larger than that measured by the weak localization (the factor is around 120). We consider not only "pair breaking" but also "pair weakening", and conclude that the reduction of the superconducting transition temperature is not due to dephasing by magnetic scattering but due to the resonance scattering of Cooper pairs by non-magnetic d-states.

Flower-like ZnO nanorod arrays grown on HF-etched Si (111): constraining relation between ZnO seed layer and Si (111)

NASA Astrophysics Data System (ADS)

Brahma, Sanjaya; Liu, C.-W.; Huang, R.-J.; Chang, S.-J.; Lo, K.-Y.

2015-11-01

We demonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.

Vapor phase hydrogenation of furfural over nickel mixed metal oxide catalysts derived from layered double hydroxides

DOE PAGES

Sulmonetti, Taylor P.; Pang, Simon H.; Claure, Micaela Taborga; ...

2016-03-09

The hydrogenation of furfural is investigated over various reduced nickel mixed metal oxides derived from layered double hydroxides (LDHs) containing Ni-Mg-Al and Ni-Co-Al. Upon reduction, relatively large Ni(0) domains develop in the Ni-Mg-Al catalysts, whereas in the Ni-Co-Al catalysts smaller metal particles of Ni(0) and Co(0), potentially as alloys, are formed, as evidenced by XAS, XPS, STEM and EELS. All the reduced Ni catalysts display similar selectivities towards major hydrogenation products (furfuryl alcohol and tetrahydrofurfuryl alcohol), though the side products varied with the catalyst composition. The 1.1Ni-0.8Co-Al catalyst showed the greatest activity per titrated site when compared to the othermore » catalysts, with promising activity compared to related catalysts in the literature. In conclusion, the use of base metal catalysts for hydrogenation of furanic compounds may be a promising alternative to the well-studied precious metal catalysts for making biomass-derived chemicals if catalyst selectivity can be improved in future work by alloying or tuning metal-oxide support interactions.« less

Synthesis and optical properties of Mg-Al layered double hydroxides precursor powders

NASA Astrophysics Data System (ADS)

Lin, Chia-Hsuan; Chu, Hsueh-Liang; Hwang, Weng-Sing; Wang, Moo-Chin; Ko, Horng-Huey

2017-12-01

The synthesis and optical properties of Mg-Al layered double hydroxide (LDH) precursor powders were investigated using X-ray diffraction (XRD), Fourier transform-infrared (FT-IR) spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction (SAED), high-resolution TEM (HRTEM), UV-transmission spectrometer, and fluorescence spectrophotometer. The FT-IR results show that the intense absorption at around 1363-1377 cm-1 can be assigned to the antisymmetric ν3 mode of interlayer carbonate anions because the LDH phase contains some CO32-. The XRD results show that all of the Mg-Al LDH precursor powders contain only a single phase of [Mg0.833Al0.167(OH)2](CO3)0.083.(H2O)0.75 but have broad and weak intensities of peaks. All of Mg-Al LDHs precursor powders before calcination have the same photoluminescence (PL) spectra. Moreover, these spectra were excited at λex = 235 nm, and the broad emission band was in the range 325-650 nm. In the range, there were relatively strong intensity at around 360, 407 and 510 nm, respectively.

Vapor phase hydrogenation of furfural over nickel mixed metal oxide catalysts derived from layered double hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sulmonetti, Taylor P.; Pang, Simon H.; Claure, Micaela Taborga

2016-05-01

The hydrogenation of furfural is investigated over various reduced nickel mixed metal oxides derived from layered double hydroxides (LDHs) containing Ni-Mg-Al and Ni-Co-Al. Upon reduction, relatively large Ni(0) domains develop in the Ni-Mg-Al catalysts, whereas in the Ni-Co-Al catalysts smaller metal particles of Ni(0) and Co(0), potentially as alloys, are formed, as evidenced by XAS, XPS, STEM and EELS. All the reduced Ni catalysts display similar selectivities towards major hydrogenation products (furfuryl alcohol and tetrahydrofurfuryl alcohol), though the side products varied with the catalyst composition. The 1.1Ni-0.8Co-Al catalyst showed the greatest activity per titrated site when compared to the othermore » catalysts, with promising activity compared to related catalysts in the literature. The use of base metal catalysts for hydrogenation of furanic compounds may be a promising alternative to the well-studied precious metal catalysts for making biomass-derived chemicals if catalyst selectivity can be improved in future work by alloying or tuning metal-oxide support interactions.« less

Synthesis of Fluorinated Graphene/CoAl-Layered Double Hydroxide Composites as Electrode Materials for Supercapacitors.

PubMed

Peng, Weijun; Li, Hongqiang; Song, Shaoxian

2017-02-15

CoAl-layered double hydroxide/fluorinated graphene (CoAl-LDH/FGN) composites were fabricated via a two-step hydrothermal method. The synthesized CoAl-LDH/FGN composites have been characterized by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and electrochemical measurements. The results indicated that the fluorinated carbon with various configuration forms were grafted onto the framework of graphene, and the C-F bond configuration and fluorine content could be tuned by the fluorination time. Most of semi-ionic C-F bonds were formed at an appropriate fluorination time and, then, converted into fluorine rich surface groups (such as CF 2 , CF 3 , etc.) which were electrochemically inactive as the fluorination time prolonged. Moreover, the CoAl-LDH/FGN composites prepared at the optimal fluorination time exhibited the highest specific capacitance (1222 F/g at 1 A/g), the best rate capability, and the most stable capacitance retention, which offered great promise as electrode materials for supercapacitors.

Enhanced fluoride removal by La-doped Li/Al layered double hydroxides.

PubMed

Cai, Jianguo; Zhao, Xin; Zhang, Yanyang; Zhang, Quanxing; Pan, Bingcai

2018-01-01

In this study La intercalated Li/Al layered double hydroxide (LDH) was developed for efficient water defluoridation. The La-modified material, i.e., La doped Li/Al-LDH, exhibits more preferable fluoride adsorption than Li/Al-LDH in a broad pH range of 5-9, with the working capacity twice of the latter and seven times of magnitude higher than activated alumina. The fluoride removal kinetics is well fitted by pseudo-second order model, and the adsorption isotherm is well described by Freundlich model. Effect of pH and competing ions was examined during fluoride sequestration. The underlying mechanism for such enhanced adsorption of fluoride by La doped Li/Al-LDH was further revealed based on XPS and FTIR analysis. The presence of La and Al was found to be responsible for the satisfactory defluoridation of La doped Li/Al-LDH, and chloride replacement with fluoride occurred from both LDHs during fluoride adsorption. Also, the capacity of La doped Li/Al-LDH could be refreshed by alkaline solution (pH = 12) for cyclic runs. All the results implied that La doped Li/Al-LDH could serve asa potential adsorbent for efficient fluoride removal from water. Copyright © 2017 Elsevier Inc. All rights reserved.

Chemical treatment of wastewater from flue gas desulphurisation

NASA Astrophysics Data System (ADS)

Pasiecznik, Iwona; Szczepaniak, Włodzimierz

2017-11-01

The article presents results of laboratory tests of removing boron and arsenium from non-ideal solutions using double-layered magnesium/aluminium hydroxides (Mg/Al Double-Layered Hydroxide - DLH) produced with nitrate-chloride method. In research, wastewater from an installation for flue gas desulfurization was examined. Double-layered hydroxides are perfect absorbents for anionic compounds. The research proved high effectiveness of preparation with reference to arsenium, as well as confirmed the effect of presence of sulfatic and arsenate ions on the effectiveness of boron removal. On the basis of research on absorption kinetics a theoretical dose of DLH/NO3-Cl/M preparation was calculated and compared with a dose that ensures emimination of boron below the limit standarized by the national regulations. Application of double-layered magnesium/aluminium hydroxides for boron elimination from industrial wastewater requires significantly higher doses of preparation than those calculated in model investigations. It is due to the priority of removal of multivalent ions, such as sulfatic, arsenate or phosphate ions, by DLH/NO3-Cl/M.

Structural and optical properties of nanocrystalline ZnS and ZnS:Al films

NASA Astrophysics Data System (ADS)

Hurma, T.

2018-06-01

ZnS and ZnS:Al films have been deposited by ultrasonic spray pyrolysis (USP) method. Three different atomic ratios of aluminium were used as the dopant element. The effects of aluminum incorporation on structural and optical properties of the ZnS films have been investigated. The XRD analysis showed that the cubic structure of the ZnS was not much affected by Al doping. The crystal size of the films decreased, as the Al ratio increased. Al incorporation caused an increase in the intensity of ZnS films' peaks observed in Raman spectra and nearly symmetrical peaks were observed. Al doping caused a small decrease in optical band gap of the ZnS film. The coating of ZnS:Al films on the surface was quite good and there were not any deformation in their crystallization levels. Reflectance values of films are about 5% in the visible region but a little decrease is seen with aluminum doping. We can say that Al doping tends to improve the optical properties of the ZnS:Al films when compared with the undoped ZnS.

Migration of trace elements from pyrite tailings in carbonate soils.

PubMed

Dorronsoro, C; Martin, F; Ortiz, I; García, I; Simón, M; Fernández, E; Aguilar, J; Fernández, J

2002-01-01

In the carbonate soils contaminated by a toxic spill from a pyrite mine (Aznalcóllar, southern Spain), a study was made of a thin layer (thickness = 4 mm) of polluted soil located between the pyrite tailings and the underlying soil. This layer, reddish-yellow in color due to a high Fe content, formed when sulfates (from the oxidation of sulfides) infiltrated the soil, causing acidification (to pH 5.6 as opposed to 8.0 of unaffected soil) and pollution (in Zn, Cu, As, Pb, Co, Cd, Sb, Bi, Tl, and In). The less mobile elements (As, Bi, In, Pb, Sb, and Tl) concentrated in the uppermost part of the reddish-yellow layer, with concentration decreasing downward. The more mobile elements (Co, Cd, Zn, and Cu) tended to precipitate where the pH was basic, toward the bottom of the layer or in the upper part of the underlying soil. The greatest accumulations occurred within the first 6 mm in overall soil depth, and were negligible below 15 mm. In addition, the acidity of the solution from the tailings degraded the minerals of the clay fraction of the soils, both the phyllosilicates as well as the carbonates. Also, within the reddish-yellow layer, gypsum formed autigenically, together with complex salts of sulfates of Fe, Al, Zn, Ca, and Mn, jarosite, and oxihydroxides of Fe.

Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures

NASA Astrophysics Data System (ADS)

Cevher, Z.; Folkes, P. A.; Hier, H. S.; VanMil, B. L.; Connelly, B. C.; Beck, W. A.; Ren, Y. H.

2018-04-01

We used Raman scattering and time-resolved photoluminescence spectroscopy to investigate the molecular-beam-epitaxy (MBE) growth parameters that optimize the structural defects and therefore the internal radiative quantum efficiency of MBE-grown GaAs/AlGaAs double heterostructures (DH). The DH structures were grown at two different temperatures and three different As/Ga flux ratios to determine the conditions for an optimized structure with the longest nonradiative minority carrier lifetime. Raman scattering measurements show an improvement in the lattice disorder in the AlGaAs and GaAs layers as the As/Ga flux ratio is reduced from 40 to 15 and as the growth temperature is increased from 550 to 595 °C. The optimized structure is obtained with the As/Ga flux ratio equal to 15 and the substrate temperature 595 °C. This is consistent with the fact that the optimized structure has the longest minority carrier lifetime. Moreover, our Raman studies reveal that incorporation of a distributed Bragg reflector layer between the substrate and DH structures significantly reduces the defect density in the subsequent epitaxial layers.

A Designed Room Temperature Multilayered Magnetic Semiconductor

NASA Astrophysics Data System (ADS)

Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

2015-03-01

A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

Perspective: Maintaining surface-phase purity is key to efficient open air fabricated cuprous oxide solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; Ievskaya, Yulia; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk

2015-02-01

Electrochemically deposited Cu{sub 2}O solar cells are receiving growing attention owing to a recent doubling in efficiency. This was enabled by the controlled chemical environment used in depositing doped ZnO layers by atomic layer deposition, which is not well suited to large-scale industrial production. While open air fabrication with atmospheric pressure spatial atomic layer deposition overcomes this limitation, we find that this approach is limited by an inability to remove the detrimental CuO layer that forms on the Cu{sub 2}O surface. Herein, we propose strategies for achieving efficiencies in atmospherically processed cells that are equivalent to the high values achievedmore » in vacuum processed cells.« less

Method of bonding metals to ceramics

DOEpatents

Maroni, V.A.

1991-04-23

A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof is disclosed. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, Au and alloys thereof. 3 figures.

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

NASA Astrophysics Data System (ADS)

Zhou, Tian-Yu; Liu, Xue-Chao; Huang, Wei; Dai, Chong-Chong; Zheng, Yan-Qing; Shi, Er-Wei

2015-04-01

Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the on-state resistance of lateral PCSS with an n+-AZO subcontact layer is 14.7% lower than that of PCSS without an n+-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials. Project supported by the Innovation Program of the Shanghai Institute of Ceramics (Grant No. Y39ZC1110G), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), the Natural Science Foundation of Shanghai (Grant No. 14ZR1419000), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61404146), and the National High-tech R & D Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

Study of plasmonics in hybrids made from a quantum emitter and double metallic nanoshell dimer

NASA Astrophysics Data System (ADS)

Guo, Jiaohan; Black, Kevin; Hu, Jiawen; Singh, Mahi

2018-05-01

We developed a theory for the fluorescence (FL) for quantum emitter and double metallic nanoshell dimer hybrids using the density matrix method. The dimer is made from two identical double metallic nanoshells, which are made of a dielectric core, a gold metallic shell and a dielectric spacer layer. The quantum emitters are deposited on the surface of the spacer layers of the dimers due to the electrostatic absorptions. We consider that dimer hybrids are surrounded by biological cells. This can be achieved by injecting them into human or animal cells. The surface plasmon polaritons (SPP) are calculated for the dimer using Maxwell’s equations in the static wave approximation. The calculated SPP energy agrees with experimental data from Zhai et al (2017 Plasmonics 12 263) for the dimer made from a silica core, a gold metallic nanoshell and a silica spacer layer. We have also obtained an analytical expression of the FL using the density matrix method. We compare our theory with FL experimental data from Zhai et al (2017 Plasmonics 12 263) where the FL spectrum was measured by varying the thickness of the spacer layer from 9 nm to 40 nm. A good agreement between theory and experiment is found. We have shown that the enhancement of the FL increases as the thickness of the spacer layer decreases. We have also found that the enhancement of the FL increases as the distance between the double metallic nanoshells in the dimer decreases. These are interesting findings which are consistent with the experiments of Zhai et al (2017 Plasmonics 12 263) and can be used to control the FL enhancement in the FL-based biomedical imaging and cancer treatment. These interesting findings may also be useful in the fabrication of nanosensors and nanoswitches for applications in medicine.

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Xia, Y.; Brault, J.; Nemoz, M.; Teisseire, M.; Vinter, B.; Leroux, M.; Chauveau, J.-M.

2011-12-01

Nonpolar (112¯0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (112¯0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Chou, Ying-Hung; Yan, Jheng-Tai; Lee, Hsin-Ying; Lee, Ching-Ting

2008-02-01

The co-sputtering Al-doped ZnO (AZO) films with Al nano-particles were used to increase the extraction efficiency of GaN-based light-emitting diodes (LEDs). Fixing the ZnO radio frequency (RF) power of 100W and changing the Al DC power from 0 to 13W, the AZO films with various Al contents can be obtained. In the experimental results, the AZO films deposited with Al DC power of 0, 4.5 and 7W do not have Al segregation. However, the segregated Al nano-particles can be found in the AZO films deposited by Al DC power of 10W and 13W. The co-sputtering 170 nm-thick AZO films with and without Al nano-particles were deposited on the transparent area of LEDs and compared the light output intensity of conventional LEDs. The light intensity of LEDs with AZO films with Al DC power 0, 4.5 and 7W increased 10% than that of conventional LEDs. This was due to the AZO film played a role of anti-reflection coating (ARC) layer. The light intensity of LEDs with AZO film deposited using Al DC power of 10W and 13W increased about 35% and 30%, respectively. It can be deduced that the output light is scattered by the Al nano-particles existed in the AZO film.

Mid-Infrared Photonic Devices Fabricated by Ultrafast Laser Inscription

DTIC Science & Technology

2016-07-01

active and passive photonic devices in single crystal, ceramic and glass substrates. This range of devices span applications such as: astrophysics [16...waveguide has been published this year in Applied Physics Letters. Reference: Macdonald, J.R., et al., Compact mid-infrared Cr:ZnSe channel...waveguide laser. Applied Physics Letters, 2013. 102(16): p. 161110. High efficiency circular cladding WG laser The initial demonstration of square double

Scintillator for low accelerating voltage scanning electron microscopy imaging

NASA Astrophysics Data System (ADS)

Bowser, Christopher; Tzolov, Marian; Barbi, Nicholas

Scintillators are essential in detecting electrons in SEM. The conventional scintillators such as YAP and YAG have poor response at low accelerating voltages due to a top conductive layer of ITO or Al. We have developed a thin film ZnWO4 scintillator with high photoluminescence quantum efficiency of 60% with enough electrical conductivity to prevent charging. We are showing that the ZnWO4 films are effective in detecting electrons at low accelerating voltages. This makes it a good option for a top layer on crystalline scintillators and we have integrated ZnWO4 with YAP to explore the high response of YAP at high electron energies and the effective response of ZnWO4 at low electron energies. We will compare the spectral intensities over a range of accelerating voltages between 1 and 30kV between the conventional and coupled thin film scintillator. The results are interpreted using a simulation of the depth profile of the electron penetration in the scintillator using CASINO. We have verified the absence of charging by measuring the sum of the secondary and backscattered electron coefficients. We have built detectors with the combined scintillators and we will compare SEM images recorded simultaneously by conventional and ZnWO4-based scintillators.

Electrical and optical properties of p-type codoped ZnO thin films prepared by spin coating technique

NASA Astrophysics Data System (ADS)

Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

2016-03-01

Undoped, doped and codoped ZnO thin films were synthesized on glass substrates using a spin coating technique. Zinc acetate dihydrate, ammonium acetate and aluminum nitrate were used as precursor for zinc, nitrogen and aluminum, respectively. X-ray diffraction shows that the thin films have a hexagonal wurtzite structure for the undoped, doped and co-doped ZnO. The transmittance of the films was above 80% and the band gap of the film varied from 3.20 eV to 3.24 eV for undoped and doped ZnO. An energy band diagram to describe the photoluminescence from the thin films was also constructed. This diagram includes the various defect levels and possible quasi-Fermi levels. A minimum resistivity of 0.0834 Ω-cm was obtained for the N and Al codoped ZnO thin films with p-type carrier conductivity. These ZnO films can be used as a window layer in solar cells and in UV lasers.

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

PubMed Central

Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

2016-01-01

We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

Facile one-step synthesis of nanocomposite based on carbon nanotubes and Nickel-Aluminum layered double hydroxides with high cycling stability for supercapacitors.

PubMed

Bai, Caihui; Sun, Shiguo; Xu, Yongqian; Yu, Ruijin; Li, Hongjuan

2016-10-15

Nickel-Aluminum Layered Double Hydroxide (NiAl-LDH) and nanocomposite of Carbon Nanotubes (CNTs) and NiAl-LDH (CNTs/NiAl-LDH) were prepared by using a facile one-step homogeneous precipitation approach. The morphology, structure and electrochemical properties of the as-prepared CNTs/NiAl-LDH nanocomposite were then systematically studied. According to the galvanostatic charge-discharge curves, the CNTs/NiAl-LDH nanocomposite exhibited a high specific capacitance of 694Fg(-1) at the 1Ag(-1). Furthermore, the specific capacitance of the CNTs/NiAl-LDH nanocomposite still retained 87% when the current density was increased from 1 to 10Ag(-1). These results indicated that the CNTs/NiAl-LDH nanocomposite displayed a higher specific capacitance and rate capability than pure NiAl-LDH. And the participation of CNTs in the NiAl-LDH composite improved the electrochemical properties. Additionally, the capacitance of the CNTs/NiAl-LDH nanocomposite kept at least 92% after 3000cycles at 20Ag(-1), suggesting that the nanocomposite exhibited excellent cycling durability. This strategy provided a facile and effective approach for the synthesis of nanocomposite based on CNTs and NiAl-LDH with enhanced supercapacitor behaviors, which can be potentially applied in energy storage conversion devices. Copyright © 2016 Elsevier Inc. All rights reserved.

Internal photoluminescence in ZnSe homoepitaxy and application in blue green orange mixed-color light-emitting diodes

NASA Astrophysics Data System (ADS)

Wenisch, H.; Fehrer, M.; Klude, M.; Ohkawa, K.; Hommel, D.

2000-06-01

We discuss the controllable color-range in ZnSe-based light-emitting diodes (LEDs) realized by ZnSe homoepitaxy and internal photoluminescence. ZnSe-based LED structures were grown by molecular-beam epitaxy (MBE) on mostly conductive ZnSe substrates, which exhibit under short wavelength light excitation at room temperature strong orange emission around 600 nm. This fact is exploited to fabricate integrated mixed-color LED chips, where light from the active layer sandwiched in a p-n-junction acts as internal excitation source. We named this effect recently "Internal Photoluminescence" (Wenisch et al., J. Appl. Phys. 82 (1997) 4690). It leads to electroluminescence spectra with two distinct emission peaks originated from the active layer and from the ZnSe substrate, respectively. In view of color impression, just by varying the Cd xZn 1- xSe quantum-well composition and the radiant recombination rate in the substrate by it's choice, as much as two thirds of the visible color space is covered. Under conditions, when only the substrate emission is present, Commission Internationale d'Eclairage (CIE) chromaticity coordinates for orange color LEDs of (0.54, 0.45, 0.01) for the red, green and blue color, respectively, were determined. 490-nm quantum-well-emitting LEDs were found to be best suited in reaching the technologically important balanced white emission ("White Point") and a value of (0.31, 0.39, 0.30) for the color coordinates close to it was experimentally achieved.

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Survey on composition and bioconcentration potential of 12 metallic elements in King Bolete (Boletus edulis) mushroom that emerged at 11 spatially distant sites.

PubMed

Falandysz, Jerzy; Frankowska, Aneta; Jarzynska, Grazyna; Dryzałowska, Anna; Kojta, Anna K; Zhang, Dan

2011-01-01

This paper provides data on baseline concentrations, interrelationships and bioconcentration potential of 12 metallic elements by King Bolete collected from 11 spatially distant sites across Poland. There are significant differences in concentrations of metals (Al, Ba, Ca, Cd, Cu, Fe, K, Mg, Mn, Na, Sr, Zn) and their bioconcentration potential in King Bolete Boletus edulis at 11 spatially distant sites surveyed across Poland. These have resulted from significant geographical differences in trace metal concentrations in a layer (0-10 cm) of organic and mineral soil underneath to fruiting bodies and possible local bioavailabilities of macro- (Ca, K, Mg, Na) and trace metals (Al, Ba, Cd, Cu, Fe, Mn, Sr, Zn) to King Bolete. The use of highly appreciated wild-grown edible King Bolete mushroom has established a baseline measure of regional minerals status, heavy metals pollution and assessment of intake rates for wild mushroom dish fanciers against which future changes can be compared. Data on Cd, Cu and Zn from this study and from literature search can be useful to set the maximum limit of these metals in King Bolete collected from uncontaminated (background) areas. In this report also reviewed are data on Al, Ba, Ca, Cd, Cu, Fe, K, Mg, Mn, Na, Sr and Zn accumulation in King Bolete.

Sandwich-like graphene/polypyrrole/layered double hydroxide nanowires for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Li, Xuejin; Zhang, Yu; Xing, Wei; Li, Li; Xue, Qingzhong; Yan, Zifeng

2016-11-01

Electrode design in nanoscale is considered to be ultra-important to construct a superb capacitor. Herein, a sandwich-like composite was made by combining graphene/polypyrrole (GPPY) with nickel-aluminum layered double hydroxide nanowires (NiAl-NWs) via a facile hydrothermal method. This sandwich-like architecture is promising in energy storage applications due to three unique features: (1) the conductive GPPY substrate not only effectively prevents the layered double hydroxides species from aggregating, but also considerably facilitates the electron transmission; (2) the ultrathin NiAl-NWs ensure a maximum exposure of active Ni2+, which can improve the efficiency of rapid redox reactions even at high current densities; (3) the sufficient space between anisotropic NiAl-NWs can accommodate a large volume change of the nanowires to avoid their collapse or distortion during the reduplicative redox reactions. Keeping all these unique features in mind, when the as-prepared composite was applied to supercapacitors, it presented an enhanced capacitive performance in terms of high specific capacitance (845 F g-1), excellent rate performance (67% retained at 30 A g-1), remarkable cyclic stability (92% maintained after 5000 cycles) and large energy density (40.1 Wh·Kg-1). This accomplishment in the present work inspires an innovative strategy of nanoscale electrode design for high-rate performance supercapacitor electrodes containing pseuducapacitive metal oxide.

Network analysis of semiconducting Zn1-xCdxS based photosensitive device using impedance spectroscopy and current-voltage measurement

NASA Astrophysics Data System (ADS)

Datta, Joydeep; Das, Mrinmay; Dey, Arka; Halder, Soumi; Sil, Sayantan; Ray, Partha Pratim

2017-10-01

ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn1-xCdxS compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn1-xCdxS/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn0.6Cd0.4S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C-V) characteristic under dark and current-voltage (I-V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I-V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn0.6Cd0.4S fabricated device are derived as 23.01 m2 V-1 s-1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn0.6Cd0.4S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn0.6Cd0.4S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.