Binder-free ZnO@ZnSnO3 quantum dots core-shell nanorod array anodes for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Tan, Hsiang; Cho, Hsun-Wei; Wu, Jih-Jen

2018-06-01

In this work, ZnSnO3 quantum dots (QDs), instead of commonly used conductive carbon, are grown on the ZnO nanorod (NR) array to construct the binder-free ZnO@ZnSnO3 QDs core-shell NR array electrode on carbon cloth for lithium-ion battery. The ZnO@ZnSnO3 QDs core-shell NR array electrode exhibits excellent lithium storage performance with an improved cycling performance and superior rate capability compared to the ZnO NR array electrode. At a current density of 200 mAg-1, 15.8% capacity loss is acquired in the ZnO@ZnSnO3 QDs core-shell NR array electrode after 110 cycles with capacity retention of 1073 mAhg-1. Significant increases in reversible capacities from 340 to 545 mAhg-1 and from 95 to 390 mAhg-1 at current densities of 1000 and 2000 mAg-1, respectively, are achieved as the ZnO NR arrays are coated with the ZnSnO3 QD shells. The remarkably improved electrochemical performances result from that the configuration of binder-free ZnO@ZnSnO3 QDs core-shell NR array electrode not only facilitates the charge transfer through the solid electrolyte interface and the electronic/ionic conduction boundary as well as lithium ion diffusion but also effectively accommodates the volume change during repeated charge/discharge processes.

Effect of Zn addition on bulk microstructure of lead-free solder SN100C

NASA Astrophysics Data System (ADS)

Nur Nadirah M., K.; Nurulakmal M., S.

2017-12-01

This paper reports the effect of adding Zn (0.5 wt% Zn, 1.0 wt% Zn) to the bulk microstructure and intermetallic compound (IMC) formation of commercial SN100C (Sn-0.7Cu-0.05Ni+Ge) lead-free solder alloy. Solder alloys were prepared by melting SN100C ingot and Zn shots, and subsequently casted into steel mold. Samples were ground and polished for XRF, and polished samples were then etched for microstructure analysis. Microstructure of bulk solder and the IMC were observed using SEM equipped with EDX. SEM result showed the addition of 0.5 wt% Zn resulted in increased grain size of β-Sn matrix but further addition of Zn (1 wt%) reduced the size of β-Sn dendrites in the bulk solder. Several intermetallic compounds (IMCs) were observed distributed in the Sn matrix; Cu-Zn, Ni-Zn and Cu-Zn-Ni IMC but in relatively small percentage compared to Cu-Zn and Ni-Zn. These particles could be considered as effective nucleating agent that led to finer β-Sn grains. It is expected that the finer β-Sn will contribute towards higher solder strength and the various IMCs present could act as suppressant for Sn diffusion which will then tend to reduce the IMC growth during thermal aging.

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

DOE PAGES

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, Lynn A.; ...

2016-01-01

Here, Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-dopants. We present high-resolution photoluminescence spectroscopy studies of unintentionally doped and Sn doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition which was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. PL linewidths are exceptionally sharp for these samples, enabling clear identification of several donor species. Temperature dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior similar tomore » other shallow donors in ZnO. Ionized donor bound exciton and two electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule), confirming the shallow nature of this defect center, which we attribute to a SnZn double donor compensated by an unknown single acceptor.« less

Electrochemical Behavior of Sn-9Zn-xTi Lead-Free Solders in Neutral 0.5M NaCl Solution

NASA Astrophysics Data System (ADS)

Wang, Zhenghong; Chen, Chuantong; Jiu, Jinting; Nagao, Shijo; Nogi, Masaya; Koga, Hirotaka; Zhang, Hao; Zhang, Gong; Suganuma, Katsuaki

2018-03-01

Electrochemical techniques were employed to study the electrochemical corrosion behavior of Sn-9Zn-xTi (x = 0, 0.05, 0.1, 0.2 wt.%) lead-free solders in neutral 0.5M NaCl solution, aiming to figure out the effect of Ti content on the corrosion properties of Sn-9Zn, providing information for the composition design of Sn-Zn-based lead-free solders from the perspective of corrosion. EIS results reveal that Ti addition was involved in the corrosion product layer and changed electrochemical interface behavior from charge transfer control process to diffusion control process. The trace amount of Ti addition (0.05 wt.%) can refine the microstructure and improve the corrosion resistance of Sn-9Zn solder, evidenced by much lower corrosion current density (i corr) and much higher total resistance (R t). Excess Ti addition (over 0.1 wt.%) led to the formation of Ti-containing IMCs, which were confirmed as Sn3Ti2 and Sn5Ti6, deteriorating the corrosion resistance of Sn-9Zn-xTi solders. The main corrosion products were confirmed as Sn3O(OH)2Cl2 mixed with small amount of chlorine/oxide Sn compounds.

Electrochemical Behavior of Sn-9Zn- xTi Lead-Free Solders in Neutral 0.5M NaCl Solution

NASA Astrophysics Data System (ADS)

Wang, Zhenghong; Chen, Chuantong; Jiu, Jinting; Nagao, Shijo; Nogi, Masaya; Koga, Hirotaka; Zhang, Hao; Zhang, Gong; Suganuma, Katsuaki

2018-05-01

Electrochemical techniques were employed to study the electrochemical corrosion behavior of Sn-9Zn- xTi ( x = 0, 0.05, 0.1, 0.2 wt.%) lead-free solders in neutral 0.5M NaCl solution, aiming to figure out the effect of Ti content on the corrosion properties of Sn-9Zn, providing information for the composition design of Sn-Zn-based lead-free solders from the perspective of corrosion. EIS results reveal that Ti addition was involved in the corrosion product layer and changed electrochemical interface behavior from charge transfer control process to diffusion control process. The trace amount of Ti addition (0.05 wt.%) can refine the microstructure and improve the corrosion resistance of Sn-9Zn solder, evidenced by much lower corrosion current density ( i corr) and much higher total resistance ( R t). Excess Ti addition (over 0.1 wt.%) led to the formation of Ti-containing IMCs, which were confirmed as Sn3Ti2 and Sn5Ti6, deteriorating the corrosion resistance of Sn-9Zn- xTi solders. The main corrosion products were confirmed as Sn3O(OH)2Cl2 mixed with small amount of chlorine/oxide Sn compounds.

Reliability of Sn/Pb and lead-free (SnAgCu) solders of surface mounted miniaturized passive components for extreme temperature (-185°C to +125°C) space missions

NASA Astrophysics Data System (ADS)

Ramesham, Rajeshuni

2011-02-01

Surface mount electronic package test boards have been assembled using tin/lead (Sn/Pb) and lead-free (Pb-free or SnAgCu or SAC305) solders. The soldered surface mount packages include ball grid arrays (BGA), flat packs, various sizes of passive chip components, etc. They have been optically inspected after assembly and subsequently subjected to extreme temperature thermal cycling to assess their reliability for future deep space, long-term, extreme temperature environmental missions. In this study, the employed temperature range (-185°C to +125°C) covers military specifications (-55°C to +100°C), extreme cold Martian (-120°C to +115°C), asteroid Nereus (-180°C to +25°C) and JUNO (-150°C to +120°C) environments. The boards were inspected at room temperature and at various intervals as a function of extreme temperature thermal cycling and bake duration. Electrical resistance measurements made at room temperature are reported and the tests to date have shown some change in resistance as a function of extreme temperature thermal cycling and some showed increase in resistance. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work will be carried out to understand the reliability of packages under extreme temperature applications (-185°C to +125°C) via continuously monitoring the daisy chain resistance for BGA, Flat-packs, lead less chip packages, etc. This paper will describe the experimental reliability results of miniaturized passive components (01005, 0201, 0402, 0603, 0805, and 1206) assembled using surface mounting processes with tin-lead and lead-free solder alloys under extreme temperature environments.

Supergravity separation of Pb and Sn from waste printed circuit boards at different temperatures

NASA Astrophysics Data System (ADS)

Meng, Long; Wang, Zhe; Zhong, Yi-wei; Chen, Kui-yuan; Guo, Zhan-cheng

2018-02-01

Printed circuit boards (PCBs) contain many toxic substances as well as valuable metals, e.g., lead (Pb) and tin (Sn). In this study, a novel technology, named supergravity, was used to separate different mass ratios of Pb and Sn from Pb-Sn alloys in PCBs. In a supergravity field, the liquid metal phase can permeate from solid particles. Hence, temperatures of 200, 280, and 400°C were chosen to separate Pb and Sn from PCBs. The results depicted that gravity coefficient only affected the recovery rates of Pb and Sn, whereas it had little effect on the mass ratios of Pb and Sn in the obtained alloys. With an increase in gravity coefficient, the recovery values of Pb and Sn in each step of the separation process increased. In the single-step separation process, the mass ratios of Pb and Sn in Pb-Sn alloys were 0.55, 0.40, and 0.64 at 200, 280, and 400°C, respectively. In the two-step separation process, the mass ratios were 0.12 and 0.55 at 280 and 400°C, respectively. Further, the mass ratio was observed to be 0.76 at 400°C in the three-step separation process. This process provides an innovative approach to the recycling mechanism of Pb and Sn from PCBs.

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Ruifeng; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201; Cao, Hongtao

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and frommore » 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.« less

Phase Equilibria of the Ternary Sn-Pb-Co System at 250°C and Interfacial Reactions of Co with Sn-Pb Alloys

NASA Astrophysics Data System (ADS)

Wang, Chao-hong; Kuo, Chun-yi; Yang, Nian-cih

2015-11-01

The isothermal section of the ternary Sn-Pb-Co system at 250°C was experimentally determined through a series of the equilibrated Sn-Pb-Co alloys of various compositions. The equilibrium phases were identified on the basis of compositional analysis. For the Sn-Co intermetallic compounds (IMCs), CoSn3, CoSn2, CoSn and Co3Sn2, the Pb solubility was very limited. There exist five tie-triangle regions. The Co-Pb system involves one monotectic reaction, so the phase separation of liquid alloys near the Co-Pb side occurred prior to solidification. The immiscibility field was also determined. Additionally, interfacial reactions between Co and Sn-Pb alloys were conducted. The reaction phase for the Sn-48 at.%Pb and Sn-58 at.%Pb at 250°C was CoSn3 and CoSn2, respectively. Both of them were simultaneously formed in the Sn-53 at.%Pb/Co. The formed IMCs were closely associated to the phase equilibria relationship of the liquid-CoSn3-CoSn2 tie-triangle. Furthermore, with increasing temperatures, the phase formed in equilibrium with Sn-37 wt.%Pb was found to transit from CoSn3 to CoSn2 at 275°C. We propose a simple method of examining the phase transition temperature in the interfacial reactions to determine the boundaries of the liquid-CoSn3-CoSn2 tie-triangles at different temperatures.

Giant Polarization and High Temperature Monoclinic Phase in a Lead-Free Perovskite of Bi(Zn 0.5Ti 0.5)O 3-BiFeO 3

DOE PAGES

Pan, Zhao; Chen, Jun; Yu, Runze; ...

2016-09-15

Lead-free piezoelectrics have attracted increasing attention due to the awareness of lead toxicity to the environment. Here, a new Bi-based lead-free perovskite of (1-x)Bi(Zn 0.5Ti 0.5)O 3-xBiFeO 3 has been synthesized via high-pressure and high-temperature method. It exhibits interest-ing properties of giant polarization, morphotropic phase boundary (MPB), and monoclinic phase. In particular, large tetragonality ( c/a = 1.228) and giant spontaneous polariza-tion of 110 μC/cm 2 has been obtained in 0.6Bi(Zn 0.5Ti 0.5)O 3-0.4BiFeO 3, which is much higher than most available lead-free materials and conventional Pb(Zr,Ti)O 3. MPB is clearly identified to be constituted by tetragonal and monoclinic phasesmore » at x = 0.5. Notably, a single monoclinic phase has been observed at x = 0.6, which exhibits an intriguing high temperature property. In conclusion, the present results are helpful to explore new lead-free MPB systems in bismuth-based compounds.« less

Pb-free surface-finishing on electronic components' terminals for Pb-free soldering assembly

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Hitoshi; Tanimoto, Morimasa; Matsuda, Akira

1999-11-01

Pb-free solderable surface finishing is essential to implement Pb-free solder assembly in order to meet with the growing demand of environmental consciousness to eliminate Pb from electronic products. Two types of widely applicable Pb-free surface finishing technologies are developed. One is the multilayer-system including Pd with Ni undercoat. Heat-resistance of Pd enables whole-surface-plating on to leadframe before IC-assembling process. The other is the double-layer-system with low-melting-point-materials, for example, thicker Sn underlayer and thinner Sn-Bi alloy overlayer, dilutes Sn-Bi alloy's defects of harmful reactivity along with substrate metal and mechanical brittleness with keeping its advantages of solder-wettability and no whisker.

Macrosegregation and nucleation in undercooled Pb-Sn alloys

NASA Technical Reports Server (NTRS)

Degroh, Henry C., III

1989-01-01

A technique resulting in large undercoolings in bulk samples (23g) of lead-tin alloys was developed. Samples of Pb-12.5 wt percent Sn, Pb-61 wt percent Sn, and Pb-77 wt percent Sn were processed with undercoolings ranging from 4 to 34 K and with cooling rates varying between 0.04 and 4 K/sec. The nucleation behavior of the Pb-Sn system was found to be nonreciprocal. The solid Sn phase effectively nucleated the Pb phase of the eutectic; however, large undercoolings developed in Sn-rich eutectic liquid in the presence of the solid Pb phase. This phenomenon is believed to be mainly the result of differences in interfacial energies between solid Sn-eutectic liquid, and solid Pb-eutectic liquid rather than lattice misfit between Pb and Sn. Large amounts of segregation developed in the highly undercooled eutectic ingots. This macrosegregation was found to increase as undercooling increases. Macrosegregation in these undercooled eutectic alloys was found to be primarily due to a sink/float mechanism and the nucleation behavior of the alloy. Lead-rich dendrites are the primary phase in the undercooled eutectic system. These dendrites grow rapidly into the undercooled bath and soon break apart due to recalescence and Sn enrichment of the liquid. These fragmented Pb dendrites are then free to settle to the bottom portion of the ingot causing the macrosegregation observed in this study. A eutectic Pb-Sn alloy undercooled 20 K and cooled at 4 K/sec had a composition of about Pb-72 wt percent Sn at the top and 55 percent Sn at the bottom.

Macrosegregation and nucleation in undercooled Pb-Sn alloys

NASA Technical Reports Server (NTRS)

Degroh, Henry C., III

1989-01-01

A novel technique resulting in large undercoolings in bulk samples (23 g) of lead-tin alloys was developed. Samples of Pb-12.5 wt percent Sn, Pb-61.9 wt.% Sn, and Pb-77 wt.% Sn were processed with undercoolings ranging from 4 to 34 K and with cooling rates varying between 0.04 and 4 K/s. The nucleation behavior of the Pb-Sn system was found to be nonreciprocal. The solid Sn phase effectively nucleated the Pb phase of the eutectic; however, large undercoolings developed in Sn-rich eutectic liquid in the presence of the solid Pb phase. This phenomenon is believed to be mainly the result of differences in interfacial energies between solid Sn-eutectic liquid, and solid Pb-eutectic liquid rather than lattice misfit between Pb and Sn. Large amounts of segregation developed in the highly undercooled eutectic ingots. This macrosegregation was found to increase as undercooling increases. Macrosegregation in these undercooled eutectic alloys was found to be primarily due to a sink/float mechanism and the nucleation behavior of the alloy. Lead-rich dendrites are the primary phase in the undercooled eutectic system. These dendrites grow rapidly into the undercooled bath and soon break apart due to recalescence and Sn enrichment of the liquid. These fragmented Pb dendrites are then free to settle to the bottom portion of the ingot causing the macrosegregation observed in this study. A eutectic Pb-Sn alloy undercooled 20 K and cooled at 4 K/s had a composition of about Pb-72 wt.% Sn at the top and 55% Sn at the bottom.

Research update: Prediction of high figure of merit plateau in SnS and solid solution of (Pb,Sn)S

DOE PAGES

Hao, Shiqiang; Dravid, Vinayak P.; Kanatzidis, Mercouri G.; ...

2016-10-17

Direct conversion between thermal and electrical energy can be achieved by thermoelectric materials, which provide a viable route for power generation and solid state refrigeration. Here, we use a combination of energetic, electronic, and vibrational first-principles based results to predict the figure of merit performance in hole doped single crystals of SnS and (Pb,Sn)S. We find high ZT values for both materials, specifically for (Pb,Sn)S along the b-axis. Both SnS and (Pb,Sn)S have excellent power factors when doped, due to a combination of increased electrical conductivity (due to doping) and a significantly enhanced Seebeck coefficient obtained by a doping-induced multibandmore » effect. Anharmonic phonon calculations combined with a Debye-Calloway model show that the lattice thermal conductivity of both compounds is low, due to intrinsic anharmonicity, and is lowered further by the random, solid solution nature of the cation sublattice of (Pb,Sn)S. (Pb,Sn)S exhibits a high ZT plateau ranging from 1.3 at 300 K to 1.9 at 800 K. Finally, the overall ZT of the hole doped (Pb,Sn)S crystals is predicted to outperform most of the current state-of-the-art thermoelectric sulfide materials.« less

Research update: Prediction of high figure of merit plateau in SnS and solid solution of (Pb,Sn)S

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao, Shiqiang; Dravid, Vinayak P.; Kanatzidis, Mercouri G.

Direct conversion between thermal and electrical energy can be achieved by thermoelectric materials, which provide a viable route for power generation and solid state refrigeration. Here, we use a combination of energetic, electronic, and vibrational first-principles based results to predict the figure of merit performance in hole doped single crystals of SnS and (Pb,Sn)S. We find high ZT values for both materials, specifically for (Pb,Sn)S along the b-axis. Both SnS and (Pb,Sn)S have excellent power factors when doped, due to a combination of increased electrical conductivity (due to doping) and a significantly enhanced Seebeck coefficient obtained by a doping-induced multibandmore » effect. Anharmonic phonon calculations combined with a Debye-Calloway model show that the lattice thermal conductivity of both compounds is low, due to intrinsic anharmonicity, and is lowered further by the random, solid solution nature of the cation sublattice of (Pb,Sn)S. (Pb,Sn)S exhibits a high ZT plateau ranging from 1.3 at 300 K to 1.9 at 800 K. Finally, the overall ZT of the hole doped (Pb,Sn)S crystals is predicted to outperform most of the current state-of-the-art thermoelectric sulfide materials.« less

High temperature XRD of Cu{sub 2.1}Zn{sub 0.9}SnSe{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chetty, Raju, E-mail: rcmallik@physics.iisc.ernet.in; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in

2014-04-24

Quaternary compound with chemical composition Cu{sub 2.1}Zn{sub 0.9}SnSe{sub 4} is prepared by solid state synthesis. High temperature XRD (X-Ray Diffraction) of this compound is used in studying the effect of temperature on lattice parameters and thermal expansion coefficients. Thermal expansion coefficient is one of the important quantities in evaluating the Grüneisen parameter which further useful in determining the lattice thermal conductivity of the material. The high temperature XRD of the material revealed that the lattice parameters as well as thermal expansion coefficients of the material increased with increase in temperature which confirms the presence of anharmonicty.

New type of quantum spin Hall insulators in hydrogenated PbSn thin films

PubMed Central

Liu, Liang; Qin, Hongwei; Hu, Jifan

2017-01-01

The realization of a quantum spin Hall (QSH) insulator working at high temperature is of both scientific and technical interest since it supports spin-polarized and dssipationless edge states. Based on first-principle calculations, we predicted that the two-dimensional (2D) binary compound of lead and tin (PbSn) in a buckled honeycomb framework can be tuned into a topological insulator with huge a band gap and structural stability via hydrogenation or growth on special substrates. This heavy-element-based structure is sufficiently ductile to survive the 18 ps molecular dynamics (MD) annealing to 400 K, and the band gap opened by strong spin-orbital-coupling (SOC) is as large as 0.7 eV. These characteristics indicate that hydrogenated PbSn (H-PbSn) is an excellent platform for QSH realization at high temperature. PMID:28218297

Estimation of the Viscosities of Liquid Sn-Based Binary Lead-Free Solder Alloys

NASA Astrophysics Data System (ADS)

Wu, Min; Li, Jinquan

2018-01-01

The viscosity of a binary Sn-based lead-free solder alloy was calculated by combining the predicted model with the Miedema model. The viscosity factor was proposed and the relationship between the viscosity and surface tension was analyzed as well. The investigation result shows that the viscosity of Sn-based lead-free solders predicted from the predicted model shows excellent agreement with the reported values. The viscosity factor is determined by three physical parameters: atomic volume, electronic density, and electro-negativity. In addition, the apparent correlation between the surface tension and viscosity of the binary Sn-based Pb-free solder was obtained based on the predicted model.

Creep properties of Pb-free solder joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, H.G.; Morris Jr., J.W.; Hua, F.

2002-04-01

Describes the creep behavior of three Sn-rich solders that have become candidates for use in Pb-free solder joints: Sn-3.5Ag, Sn-3Ag-0.5Cu and Sn-0.7Cu. The three solders show the same general behavior when tested in thin joints between Cu and Ni/Au metallized pads at temperatures between 60 and 130 C. Their steady-state creep rates are separated into two regimes with different stress exponents(n). The low-stress exponents range from {approx}3-6, while the high-stress exponents are anomalously high (7-12). Strikingly, the high-stress exponent has a strong temperature dependence near room temperature, increasing significantly as the temperature drops from 95 to 60 C. The anomalousmore » creep behavior of the solders appears to be due to the dominant Sn constituent. Joints of pure Sn have stress exponents, n, that change with stress and temperature almost exactly like those of the Sn-rich solder joints. Research on creep in bulk samples of pure Sn suggests that the anomalous temperature dependence of the stress exponent may show a change in the dominant mechanism of creep. Whatever its source, it has the consequence that conventional constitutive relations for steady-state creep must be used with caution in treating Sn-rich solder joints, and qualification tests that are intended to verify performance should be carefully designed.« less

Constitutive Behavior of Mixed Sn-Pb/Sn-3.0Ag-0.5Cu Solder Alloys

NASA Astrophysics Data System (ADS)

Tucker, J. P.; Chan, D. K.; Subbarayan, G.; Handwerker, C. A.

2012-03-01

During the transition from Pb-containing solders to Pb-free solders, joints composed of a mixture of Sn-Pb and Sn-Ag-Cu often result from either mixed assemblies or rework. Comprehensive characterization of the mechanical behavior of these mixed solder alloys resulting in a deformationally complete constitutive description is necessary to predict failure of mixed alloy solder joints. Three alloys with 1 wt.%, 5 wt.%, and 20 wt.% Pb were selected so as to represent reasonable ranges of Pb contamination expected from different 63Sn-37Pb components mixed with Sn-3.0Ag-0.5Cu. Creep and displacement-controlled tests were performed on specially designed assemblies at temperatures of 25°C, 75°C, and 125°C using a double lap shear test setup that ensures a nearly homogeneous state of plastic strain at the joint interface. The observed changes in creep and tensile behavior with Pb additions were related to phase equilibria and microstructure differences observed through differential scanning calorimetric and scanning electron microscopic cross-sectional analysis. As Pb content increased, the steady-state creep strain rates increased, and primary creep decreased. Even 1 wt.% Pb addition was sufficient to induce substantially large creep strains relative to the Sn-3.0Ag-0.5Cu alloy. We describe rate-dependent constitutive models for Pb-contaminated Sn-Ag-Cu solder alloys, ranging from the traditional time-hardening creep model to the viscoplastic Anand model. We illustrate the utility of these constitutive models by examining the inelastic response of a chip-scale package (CSP) under thermomechanical loading through finite-element analysis. The models predict that, as Pb content increases, total inelastic dissipation decreases.

Thermophysical properties of Cu-In-Sn liquid Pb-free alloys: viscosity and surface tension

NASA Astrophysics Data System (ADS)

Dogan, Ali; Arslan, Hüseyin

2018-01-01

The viscosity of a few Cu-In-Sn liquid alloys has been investigated by a number of geometric (Muggianu, Kohler, Toop) and physical thermodynamic models (Kozlov-Romanov-Petrov, Budai-Benko-Kaptay, Schick et al.) and GSM for the cross section (z/y = 1/3) in Pb-free liquid alloy Cux-Iny-Snz at 1073 K. Moreover, the surface tensions of the same liquid alloys have been investigated by a number of geometric models and the Butler model for the cross section Cux-Iny-Snz (z/(y + z) = 0, 0.1, 0.3, 0.5, 0.7, 0.9, 1) at the same temperature. The best agreement of the surface tensions was obtained in the Kohler model for xCu = 10 at % and the Butler model for xCu = 20 at % and xCu = 30 at.%, respectively. The best agreement among chosen geometric and physical models and experiment for these selected sections Cu80In15Sn5, Cu75In15Sn10, Cu55In7Sn38, Cu33In50Sn17 and Cu26In55Sn19 at 1073 K was obtained for the Budai-Benkö-Kaptay model.

Reference Data for the Density, Viscosity, and Surface Tension of Liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn Eutectic Alloys

NASA Astrophysics Data System (ADS)

Dobosz, Alexandra; Gancarz, Tomasz

2018-03-01

The data for the physicochemical properties viscosity, density, and surface tension obtained by different experimental techniques have been analyzed for liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn eutectic alloys. All experimental data sets have been categorized and described by the year of publication, the technique used to obtain the data, the purity of the samples and their compositions, the quoted uncertainty, the number of data in the data set, the form of data, and the temperature range. The proposed standard deviations of liquid eutectic Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn alloys are 0.8%, 0.1%, 0.5%, 0.2%, and 0.1% for the density, 8.7%, 4.1%, 3.6%, 5.1%, and 4.0% for viscosity, and 1.0%, 0.5%, 0.3%, N/A, and 0.4% for surface tension, respectively, at a confidence level of 95%.

Thermal fuse for high-temperature batteries

DOEpatents

Jungst, Rudolph G.; Armijo, James R.; Frear, Darrel R.

2000-01-01

A thermal fuse, preferably for a high-temperature battery, comprising leads and a body therebetween having a melting point between approximately 400.degree. C. and 500.degree. C. The body is preferably an alloy of Ag--Mg, Ag--Sb, Al--Ge, Au--In, Bi--Te, Cd--Sb, Cu--Mg, In--Sb, Mg--Pb, Pb--Pd, Sb--Zn, Sn--Te, or Mg--Al.

Effects of CuZnAl Particles on Properties and Microstructure of Sn-58Bi Solder

PubMed Central

Yang, Fan; Zhang, Liang; Liu, Zhi-quan; Zhong, Su Juan; Ma, Jia; Bao, Li

2017-01-01

With the purpose of improving the properties of the Sn-58Bi lead-free solder, micro-CuZnAl particles ranging from 0 to 0.4 wt % were added into the low temperature eutectic Sn-58Bi lead-free solder. After the experimental testing of micro-CuZnAl particles on the properties and microstructure of the Sn-58Bi solders, it was found that the wettability of the Sn-58Bi solders was obviously improved with addition of CuZnAl particles. When the addition of CuZnAl particles was 0.2 wt %, the wettability of the Sn-58Bi solder performed best. At the same time, excessive addition of CuZnAl particles led to poor wettability. However, the results showed that CuZnAl particles changed the melting point of the Sn-58Bi solder slightly. The microstructure of the Sn-58Bi solder was refined by adding CuZnAl particles. When the content of CuZnAl addition was between 0.1 and 0.2 wt %, the refinement was great. In addition, the interfacial IMC layer between new composite solder and Cu substrate was thinner than that between the Sn-58Bi solder and Cu substrate. PMID:28772917

Sensitivity of PbSnTe:In films to the radiation of free electron laser

NASA Astrophysics Data System (ADS)

Akimov, A. N.; Epov, V. S.; Klimov, A. E.; Kubarev, V. V.; Paschin, N. S.

2018-01-01

The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-x Sn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

Creep Behavior of a Sn-Ag-Bi Pb-Free Solder

PubMed Central

Vianco, Paul; Rejent, Jerome; Grazier, Mark; Kilgo, Alice

2012-01-01

Compression creep tests were performed on the ternary 91.84Sn-3.33Ag-4.83Bi (wt.%, abbreviated Sn-Ag-Bi) Pb-free alloy. The test temperatures were: −25 °C, 25 °C, 75 °C, 125 °C, and 160 °C (± 0.5 °C). Four loads were used at the two lowest temperatures and five at the higher temperatures. The specimens were tested in the as-fabricated condition or after having been subjected to one of two air aging conditions: 24 hours at either 125 °C or 150 °C. The strain-time curves exhibited frequent occurrences of negative creep and small-scale fluctuations, particularly at the slower strain rates, that were indicative of dynamic recrystallization (DRX) activity. The source of tertiary creep behavior at faster strain rates was likely to also be DRX rather than a damage accumulation mechanism. Overall, the strain-time curves did not display a consistent trend that could be directly attributed to the aging condition. The sinh law equation satisfactorily represented the minimum strain rate as a function of stress and temperature so as to investigate the deformation rate kinetics: dε/dtmin = Asinhn (ασ) exp (−ΔH/RT). The values of α, n, and ΔH were in the following ranges (±95% confidence interval): α, 0.010–0.015 (±0.005 1/MPa); n, 2.2–3.1 (±0.5); and ΔH, 54–66 (±8 kJ/mol). The rate kinetics analysis indicated that short-circuit diffusion was a contributing mechanism to dislocation motion during creep. The rate kinetics analysis also determined that a minimum creep rate trend could not be developed between the as-fabricated versus aged conditions. This study showed that the elevated temperature aging treatments introduced multiple changes to the Sn-Ag-Bi microstructure that did not result in a simple loss (“softening”) of its mechanical strength.

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys

NASA Astrophysics Data System (ADS)

Maltsev, Dmitry S.; Volkovich, Vladimir A.; Yamshchikov, Leonid F.; Chukin, Andrey V.

2016-09-01

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys were studied. Temperature dependences of gadolinium activity in the studied alloys were determined at 573-1073 K employing the EMF method. Solubility of gadolinium in the Ga-Sn and Ga-Zn alloys was measured at 462-1073 K using IMCs sedimentation method. Activity coefficients as well as partial and excess thermodynamic functions of gadolinium in the studied alloys were calculated on the basis of the obtained experimental data.

Relationship between the Porco, Bolivia, Ag-Zn-Pb-Sn deposit and the Porco Caldera

USGS Publications Warehouse

Cunningham, C.G.

1994-01-01

The Porco Ag-Zn-Pb-Sn deposit, a major Ag producer in the 16th century and currently the major Zn producer in Bolivia, consists of a swarm of fissure-filling veins in the newly recognized Porco caldera. The caldera measures 5 km by 3 km and formed in response to the eruption of the 12 Ma crystal-rich dacitic Porco Tuff. The mineralization is associated with, and is probably genetically related to, the 8.6 Ma Huayna Porco stock. The Porco deposit consists of steeply dipping irregular and curvilinear veins that cut the intracaldera Porco Tuff about 1 km east of the Huayna Porco stock. Most of the veins are aligned along the structural margin (ring fracture) of the caldera. The ore deposit is zoned around the Huayna Porco stock. The primary Ag minerals are most abundant in the upper parts of the viens. Fluid inclusions in sphalerite stalactites have homogenization temperatures of about 225??C and salinities of about 8 wt% NaCl equiv. The stalactites and the presence of sparse vapor-rich inclusions suggest deposition of sphalerite under boiling conditions. -from Authors

Defect-free high Sn-content GeSn on insulator grown by rapid melting growth.

PubMed

Liu, Zhi; Cong, Hui; Yang, Fan; Li, Chuanbo; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2016-12-12

GeSn is an attractive semiconductor material for Si-based photonics. However, large lattice mismatch between GeSn and Si and the low solubility of Sn in Ge limit its development. In order to obtain high Sn-content GeSn on Si, it is normally grown at low temperature, which would lead to inevitable dislocations. Here, we reported a single-crystal defect-free graded GeSn on insulator (GSOI) stripes laterally grown by rapid melting growth (RMG). The Sn-content reaches to 14.2% at the end of the GSOI stripe. Transmission electron microscopy observation shows the GSOI stripe without stacking fault and dislocations. P-channel pseudo metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-semiconductor-metal (MSM) Schottky junction photodetectors were fabricated on these GSOIs. Good transistor performance with a low field peak hole mobility of 402 cm 2 /Vs is obtained, which indicates a high-quality of this GSOI structure. Strong near-infrared and short-wave infrared optical absorption of the MSM photodetectors at 1550 nm and 2000 nm were observed. Owing to high Sn-content and defect-free, responsivity of 236 mA/W@-1.5 V is achieved at 1550 nm wavelength. In addition, responsivity reaches 154 mA/W@-1.5 V at 2000 nm with the optical absorption layer only 200 nm-thick, which is the highest value reported for GeSn junction photodetectors until now.

Defect-free high Sn-content GeSn on insulator grown by rapid melting growth

PubMed Central

Liu, Zhi; Cong, Hui; Yang, Fan; Li, Chuanbo; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2016-01-01

GeSn is an attractive semiconductor material for Si-based photonics. However, large lattice mismatch between GeSn and Si and the low solubility of Sn in Ge limit its development. In order to obtain high Sn-content GeSn on Si, it is normally grown at low temperature, which would lead to inevitable dislocations. Here, we reported a single-crystal defect-free graded GeSn on insulator (GSOI) stripes laterally grown by rapid melting growth (RMG). The Sn-content reaches to 14.2% at the end of the GSOI stripe. Transmission electron microscopy observation shows the GSOI stripe without stacking fault and dislocations. P-channel pseudo metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-semiconductor-metal (MSM) Schottky junction photodetectors were fabricated on these GSOIs. Good transistor performance with a low field peak hole mobility of 402 cm2/Vs is obtained, which indicates a high-quality of this GSOI structure. Strong near-infrared and short-wave infrared optical absorption of the MSM photodetectors at 1550 nm and 2000 nm were observed. Owing to high Sn-content and defect-free, responsivity of 236 mA/W@-1.5 V is achieved at 1550 nm wavelength. In addition, responsivity reaches 154 mA/W@-1.5 V at 2000 nm with the optical absorption layer only 200 nm-thick, which is the highest value reported for GeSn junction photodetectors until now. PMID:27941825

Defect-free high Sn-content GeSn on insulator grown by rapid melting growth

NASA Astrophysics Data System (ADS)

Liu, Zhi; Cong, Hui; Yang, Fan; Li, Chuanbo; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2016-12-01

GeSn is an attractive semiconductor material for Si-based photonics. However, large lattice mismatch between GeSn and Si and the low solubility of Sn in Ge limit its development. In order to obtain high Sn-content GeSn on Si, it is normally grown at low temperature, which would lead to inevitable dislocations. Here, we reported a single-crystal defect-free graded GeSn on insulator (GSOI) stripes laterally grown by rapid melting growth (RMG). The Sn-content reaches to 14.2% at the end of the GSOI stripe. Transmission electron microscopy observation shows the GSOI stripe without stacking fault and dislocations. P-channel pseudo metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-semiconductor-metal (MSM) Schottky junction photodetectors were fabricated on these GSOIs. Good transistor performance with a low field peak hole mobility of 402 cm2/Vs is obtained, which indicates a high-quality of this GSOI structure. Strong near-infrared and short-wave infrared optical absorption of the MSM photodetectors at 1550 nm and 2000 nm were observed. Owing to high Sn-content and defect-free, responsivity of 236 mA/W@-1.5 V is achieved at 1550 nm wavelength. In addition, responsivity reaches 154 mA/W@-1.5 V at 2000 nm with the optical absorption layer only 200 nm-thick, which is the highest value reported for GeSn junction photodetectors until now.

Charge states and lattice sites of dilute implanted Sn in ZnO

NASA Astrophysics Data System (ADS)

Mølholt, T. E.; Gunnlaugsson, H. P.; Johnston, K.; Mantovan, R.; Röder, J.; Adoons, V.; Mokhles Gerami, A.; Masenda, H.; Matveyev, Y. A.; Ncube, M.; Unzueta, I.; Bharuth-Ram, K.; Gislason, H. P.; Krastev, P.; Langouche, G.; Naidoo, D.; Ólafsson, S.; Zenkevich, A.; ISOLDE Collaboration

2017-04-01

The common charge states of Sn are 2+  and 4+. While charge neutrality considerations favour 2+  to be the natural charge state of Sn in ZnO, there are several reports suggesting the 4+  state instead. In order to investigate the charge states, lattice sites, and the effect of the ion implantation process of dilute Sn atoms in ZnO, we have performed 119Sn emission Mössbauer spectroscopy on ZnO single crystal samples following ion implantation of radioactive 119In (T ½  =  2.4 min) at temperatures between 96 K and 762 K. Complementary perturbed angular correlation measurements on 111mCd implanted ZnO were also conducted. Our results show that the 2+  state is the natural charge state for Sn in defect free ZnO and that the 4+  charge state is stabilized by acceptor defects created in the implantation process.

Extremely High Phosphate Sorption Capacity in Cu-Pb-Zn Mine Tailings.

PubMed

Huang, Longbin; Li, Xiaofang; Nguyen, Tuan A H

2015-01-01

Elevated inorganic phosphate (Pi) concentrations in pore water of amended tailings under direct revegetation may cause toxicity in some native woody species but not native forbs or herb species, all of which are key constituents in target native plant communities for phytostabilizing base metal mine tailings. As a result, Pi sorption capacity has been quantified by a conventional batch procedure in three types of base metal mine tailings sampled from two copper (Cu)-lead (Pb)-zinc (Zn) mines, as the basis for Pi-fertiliser addition. It was found that the Pi-sorption capacity in the tailings and local soil was extremely high, far higher than highly weathered agricultural soils in literature, but similar to those of volcanic ash soils. The Langmuir P-sorption maximum was up to 7.72, 4.12, 4.02 and 3.62 mg P g-1 tailings, in the fresh tailings of mixed Cu-Pb-Zn streams (MIMTD7), the weathered tailings of mixed Cu-Pb-Zn streams (MIMTD5), EHM-TD (fresh Cu-stream, high magnetite content) and local soil (weathered shale and schist), respectively. Physicochemical factors highly correlated with the high Pi-sorption in the tailings were fine particle distribution, oxalate and dithionite-citrate-bicarbonate extractable Fe (FeO and Fed), oxalate-extractable Al and Mn, and the levels of soluble Cd and Zn, and total S and Fe. Large amounts of amorphous Fe oxides and oxyhydroxides may have been formed from the oxidation of pyritic materials and redox cycles of Fe-minerals (such as pyrite (FeS2), ankerite (Ca(Fe Mg)(CO3)2 and siderite (FeCO3), as indicated by the extractable FeO values. The likely formation of sparingly soluble Zn-phosphate in the Pb-Zn tailings containing high levels of Zn (from sphalerite ((Zn,Fe)S, ZnS, (Zn,Cd)S)) may substantially lower soluble Zn levels in the tailings through high rates of Pi-fertiliser addition. As a result, the possibility of P-toxicity in native plant species caused by the addition of soluble phosphate fertilizers would be minimal.

Highly Sensitive Flexible Human Motion Sensor Based on ZnSnO3/PVDF Composite

NASA Astrophysics Data System (ADS)

Yang, Young Jin; Aziz, Shahid; Mehdi, Syed Murtuza; Sajid, Memoon; Jagadeesan, Srikanth; Choi, Kyung Hyun

2017-07-01

A highly sensitive body motion sensor has been fabricated based on a composite active layer of zinc stannate (ZnSnO3) nano-cubes and poly(vinylidene fluoride) (PVDF) polymer. The thin film-based active layer was deposited on polyethylene terephthalate flexible substrate through D-bar coating technique. Electrical and morphological characterizations of the films and sensors were carried out to discover the physical characteristics and the output response of the devices. The synergistic effect between piezoelectric ZnSnO3 nanocubes and β phase PVDF provides the composite with a desirable electrical conductivity, remarkable bend sensitivity, and excellent stability, ideal for the fabrication of a motion sensor. The recorded resistance of the sensor towards the bending angles of -150° to 0° to 150° changed from 20 MΩ to 55 MΩ to 100 MΩ, respectively, showing the composite to be a very good candidate for motion sensing applications.

Electrodeposition of nanostructured Sn-Zn coatings

NASA Astrophysics Data System (ADS)

Salhi, Y.; Cherrouf, S.; Cherkaoui, M.; Abdelouahdi, K.

2016-03-01

The electrodeposition of Sn-Zn coating at ambient temperature was investigated. The bath consists of metal salts SnCl2·2H2O and ZnSO4·7H2O and sodium citrate (NaC6H5Na3O7·2H2O) as complexing agent. To prevent precipitation, the pH is fixed at 5. Reducing tin and zinc through Sncit2- and ZnHcit- complex respectively is confirmed by the presence of two cathodic peaks on the voltammogram. The kinetic of tin (II) reduction process is limited by the SnCit2- dissociation. The SEM and TEM observations have showed that the coating consists of a uniform Sn-Zn layer composed of fine grains on which tin aggregates grow up. XRD revealed peaks corresponding to the hexagonal Zn phase and the tetragonal β-Sn phase.

Abundant defects and defect clusters in kesterite Cu2ZnSnS4 and Cu2ZnSnSe4

NASA Astrophysics Data System (ADS)

Chen, Shiyou; Wang, Lin-Wang; Walsh, Aron; Gong, Xin-Gao; Wei, Su-Huai

2013-03-01

Cu2ZnSnS4 and Cu2ZnSnSe4 are drawing intensive attention as the light-absorber materials in thin-film solar cells. A large variety of intrinsic defects can be formed in these quaternary semiconductors, which have important influence on their optical and electrical properties, and hence their photovoltaic performance. We will present our first-principles calculation study on a series of intrinsic defects and defect clusters in Cu2ZnSnS4 and Cu2ZnSnSe4, and discuss: (i) strong phase-competition between the kesterites and the coexisting secondary compounds; (ii) the dominant CuZn antisites and Cu vacancies which determine the intrinsic p-type conductivity, and their dependence on the elemental ratios; (iii) the high population of charge-compensated defect clusters (like VCu + ZnCu and 2CuZn + SnZn) and their contribution to non-stoichiometry ; (iv) the deep-level defects which act as recombination centers. Based on the calculation, we will explain the experimental observation that Cu poor and Zn rich conditions give the highest solar cell efficiency, as well as suggesting an efficiency limitation in Cu2ZnSn(S,Se)4 cells with high S composition. Supported by NSF of China, JCAP: a U.S. DOE Energy Innovation Hub, Royal Society of U.K. and EPSRC, and U.S. DOE.

Point defects in Cu 2 ZnSnSe 4 (CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition: Point defects in Cu 2 ZnSnSe 4 (CZTSe)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schelhas, L. T.; Stone, K. H.; Harvey, S. P.

The interest in Cu2ZnSn(S,Se)4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a Voc deficit, where the Voc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. To directly determine the level of Cu/Zn ordering, wemore » have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. To understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.« less

Extremely High Phosphate Sorption Capacity in Cu-Pb-Zn Mine Tailings

PubMed Central

Huang, Longbin; Li, Xiaofang; Nguyen, Tuan A. H.

2015-01-01

Elevated inorganic phosphate (Pi) concentrations in pore water of amended tailings under direct revegetation may cause toxicity in some native woody species but not native forbs or herb species, all of which are key constituents in target native plant communities for phytostabilizing base metal mine tailings. As a result, Pi sorption capacity has been quantified by a conventional batch procedure in three types of base metal mine tailings sampled from two copper (Cu)-lead (Pb)-zinc (Zn) mines, as the basis for Pi-fertiliser addition. It was found that the Pi-sorption capacity in the tailings and local soil was extremely high, far higher than highly weathered agricultural soils in literature, but similar to those of volcanic ash soils. The Langmuir P-sorption maximum was up to 7.72, 4.12, 4.02 and 3.62 mg P g-1 tailings, in the fresh tailings of mixed Cu-Pb-Zn streams (MIMTD7), the weathered tailings of mixed Cu-Pb-Zn streams (MIMTD5), EHM-TD (fresh Cu-stream, high magnetite content) and local soil (weathered shale and schist), respectively. Physicochemical factors highly correlated with the high Pi-sorption in the tailings were fine particle distribution, oxalate and dithionite-citrate-bicarbonate extractable Fe (FeO and Fed), oxalate-extractable Al and Mn, and the levels of soluble Cd and Zn, and total S and Fe. Large amounts of amorphous Fe oxides and oxyhydroxides may have been formed from the oxidation of pyritic materials and redox cycles of Fe-minerals (such as pyrite (FeS2), ankerite (Ca(Fe Mg)(CO3)2 and siderite (FeCO3), as indicated by the extractable FeO values. The likely formation of sparingly soluble Zn-phosphate in the Pb-Zn tailings containing high levels of Zn (from sphalerite ((Zn,Fe)S, ZnS, (Zn,Cd)S)) may substantially lower soluble Zn levels in the tailings through high rates of Pi-fertiliser addition. As a result, the possibility of P-toxicity in native plant species caused by the addition of soluble phosphate fertilizers would be minimal. PMID

Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles

NASA Astrophysics Data System (ADS)

Ribeiro, Guilherme A. S.; Paulatto, Lorenzo; Bianco, Raffaello; Errea, Ion; Mauri, Francesco; Calandra, Matteo

2018-01-01

At room temperature, PbTe and SnTe are efficient thermoelectrics with a cubic structure. At low temperature, SnTe undergoes a ferroelectric transition with a critical temperature strongly dependent on the hole concentration, while PbTe is an incipient ferroelectric. By using the stochastic self-consistent harmonic approximation, we investigate the anharmonic phonon spectra and the occurrence of a ferroelectric transition in both systems. We find that vibrational spectra strongly depend on the approximation used for the exchange-correlation kernel in density-functional theory. If gradient corrections and the theoretical volume are employed, then the calculation of the phonon frequencies as obtained from the diagonalization of the free-energy Hessian leads to phonon spectra in good agreement with experimental data for both systems. In PbTe we evaluate the linear thermal expansion coefficient γ =2.3 ×10-5K-1 , finding it to be in good agreement with experimental value of γ =2.04 ×10-5K-1 . Furthermore, we study the phonon spectrum and we do reproduce the transverse optical mode phonon satellite detected in inelastic neutron scattering and the crossing between the transverse optical and the longitudinal acoustic modes along the Γ X direction. The phonon satellite becomes broader at high temperatures but its energy is essentially temperature independent, in agreement with experiments. We decompose the self-consistent harmonic free energy in second-, third-, and fourth-order anharmonic terms. We find that the third- and fourth-order terms are small. However, treating the third-order term perturbatively on top of the second-order self-consistent harmonic free energy overestimates the energy of the satellite associated with the transverse optical mode. On the contrary, a perturbative treatment on top of the harmonic Hamiltonian breaks down and leads to imaginary phonon frequencies already at 300 K. In the case of SnTe, we describe the occurrence of a ferroelectric

Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Bite; Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth

2014-01-01

Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallizationmore » behavior was correlated with dislocation slip activities.« less

A novel label-free photoelectrochemical sensor based on N,S-GQDs and CdS co-sensitized hierarchical Zn2SnO4 cube for detection of cardiac troponin I.

PubMed

Fan, Dawei; Bao, Chunzhu; Khan, Malik Saddam; Wang, Chuanlei; Zhang, Yong; Liu, Qinze; Zhang, Xian; Wei, Qin

2018-05-30

A novel label-free photoelectrochemical (PEC) sensor based on graphene quantum dots doped with nitrogen and sulfur (N,S-GQDs) and CdS co-sensitized hierarchical Zn 2 SnO 4 cube was fabricated to detect cardiac troponin I (cTnI). The unique hierarchical Zn 2 SnO 4 cube was synthesized successfully by the solvothermal method, which has a large specific surface to load functional materials. N,S-GQDs nanoparticles were assembled to the surface of cubic Zn 2 SnO 4 coated ITO electrode, which efficiently accelerated the electronic transition and improved photo-to-current conversion efficiency. Then, CdS nanoparticles further were modified by in-situ growth method to form Zn 2 SnO 4 /N,S-GQDs/CdS composite with prominent photocurrent, which was 30 times that of the Zn 2 SnO 4 cube alone. In this work, the specific immune recognition between cTnI antigens and cTnI antibodies (anti-cTnI) reduced the intensity of the photoelectric signal. And the intensity decreased linearly with the logarithm of cTnI concentration range from 0.001 ng/mL to 50 ng/mL with a detection limit of 0.3 pg/mL. With high sensitivity, excellent selectivity, good stability and reproducibility, the fabricated PEC sensor showed promising applications in the sensor, clinical diagnosis of myocardial infarction and PEC analysis. Copyright © 2018 Elsevier B.V. All rights reserved.

Average and local structure of the Pb-free ferroelectric perovskites ( Sr , Sn ) TiO 3 and ( Ba , Ca , Sn ) TiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laurita, Geneva; Page, Katharine; Suzuki, Shoichiro

2015-12-16

The characteristic structural off -centering of Pb 2+ in oxides, associated with its 6s 2 lone pair, allows it to play a dominant role in polar materials, and makes it a somewhat ubiquitous component of ferroelectrics. In this work, we examine the compounds Sr 0.9Sn 0.1TiO 3 and Ba 0.79Ca 0.16Sn 0.05TiO 3 using neutron total scattering techniques with data acquired at di erent temperatures. In these compounds, previously reported as ferroelectrics, Sn 2+ appears to display some of the characteristics of Pb 2+. We compare the local and long-range structures of the Sn2+-substituted compositions to the unsubstituted parent compoundsmore » SrTiO 3 and BaTiO 3. Lastly, we find that even at these small substitution levels, the Sn 2+ lone pairs drive the local ordering behavior, with the local structure of both compounds more similar to the structure of PbTiO 3 rather than the parent compounds.« less

Lead (Pb)-Free Solder Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

VIANCO,PAUL T.

2000-08-15

Legislative and marketing forces both abroad and in the US are causing the electronics industry to consider the use of Pb-free solders in place of traditional Sn-Pb alloys. Previous case studies have demonstrated the satisfactory manufacturability and reliability of several Pb-free compositions for printed circuit board applications. Those data, together with the results of fundamental studies on Pb-free solder materials, have indicated the general feasibility of their use in the broader range of present-day, electrical and electronic components.

Assessing the toxicity of Pb- and Sn-based perovskite solar cells in model organism Danio rerio

NASA Astrophysics Data System (ADS)

Babayigit, Aslihan; Duy Thanh, Dinh; Ethirajan, Anitha; Manca, Jean; Muller, Marc; Boyen, Hans-Gerd; Conings, Bert

2016-01-01

Intensive development of organometal halide perovskite solar cells has lead to a dramatic surge in power conversion efficiency up to 20%. Unfortunately, the most efficient perovskite solar cells all contain lead (Pb), which is an unsettling flaw that leads to severe environmental concerns and is therefore a stumbling block envisioning their large-scale application. Aiming for the retention of favorable electro-optical properties, tin (Sn) has been considered the most likely substitute. Preliminary studies have however shown that Sn-based perovskites are highly unstable and, moreover, Sn is also enlisted as a harmful chemical, with similar concerns regarding environment and health. To bring more clarity into the appropriateness of both metals in perovskite solar cells, we provide a case study with systematic comparison regarding the environmental impact of Pb- and Sn-based perovskites, using zebrafish (Danio Rerio) as model organism. Uncovering an unexpected route of intoxication in the form of acidification, it is shown that Sn based perovskite may not be the ideal Pb surrogate.

Assessing the toxicity of Pb- and Sn-based perovskite solar cells in model organism Danio rerio

PubMed Central

Babayigit, Aslihan; Duy Thanh, Dinh; Ethirajan, Anitha; Manca, Jean; Muller, Marc; Boyen, Hans-Gerd; Conings, Bert

2016-01-01

Intensive development of organometal halide perovskite solar cells has lead to a dramatic surge in power conversion efficiency up to 20%. Unfortunately, the most efficient perovskite solar cells all contain lead (Pb), which is an unsettling flaw that leads to severe environmental concerns and is therefore a stumbling block envisioning their large-scale application. Aiming for the retention of favorable electro-optical properties, tin (Sn) has been considered the most likely substitute. Preliminary studies have however shown that Sn-based perovskites are highly unstable and, moreover, Sn is also enlisted as a harmful chemical, with similar concerns regarding environment and health. To bring more clarity into the appropriateness of both metals in perovskite solar cells, we provide a case study with systematic comparison regarding the environmental impact of Pb- and Sn-based perovskites, using zebrafish (Danio Rerio) as model organism. Uncovering an unexpected route of intoxication in the form of acidification, it is shown that Sn based perovskite may not be the ideal Pb surrogate. PMID:26759068

Thermal Fatigue Evaluation of Pb-Free Solder Joints: Results, Lessons Learned, and Future Trends

NASA Astrophysics Data System (ADS)

Coyle, Richard J.; Sweatman, Keith; Arfaei, Babak

2015-09-01

Thermal fatigue is a major source of failure of solder joints in surface mount electronic components and it is critically important in high reliability applications such as telecommunication, military, and aeronautics. The electronic packaging industry has seen an increase in the number of Pb-free solder alloy choices beyond the common near-eutectic Sn-Ag-Cu alloys first established as replacements for eutectic SnPb. This paper discusses the results from Pb-free solder joint reliability programs sponsored by two industry consortia. The characteristic life in accelerated thermal cycling is reported for 12 different Pb-free solder alloys and a SnPb control in 9 different accelerated thermal cycling test profiles in terms of the effects of component type, accelerated thermal cycling profile and dwell time. Microstructural analysis on assembled and failed samples was performed to investigate the effect of initial microstructure and its evolution during accelerated thermal cycling test. A significant finding from the study is that the beneficial effect of Ag on accelerated thermal cycling reliability (measured by characteristic lifetime) diminishes as the severity of the accelerated thermal cycling, defined by greater ΔT, higher peak temperature, and longer dwell time increases. The results also indicate that all the Pb-free solders are more reliable in accelerated thermal cycling than the SnPb alloy they have replaced. Suggestions are made for future work, particularly with respect to the continued evolution of alloy development for emerging application requirements and the value of using advanced analytical methods to provide a better understanding of the effect of microstructure and its evolution on accelerated thermal cycling performance.

Wetting of Sn-Zn-Ga and Sn-Zn-Na Alloys on Al and Ni Substrate

NASA Astrophysics Data System (ADS)

Gancarz, Tomasz; Bobrowski, Piotr; Pawlak, Sylwia; Schell, Norbert; Chulist, Robert; Janik, Katarzyna

2018-01-01

Wetting of Al and Ni substrate by Sn-Zn eutectic-based alloys with 0.5 (wt.%) of Ga and 0.2 (wt.%) of Na was studied using the sessile drop method in the presence of ALU33® flux. Spreading tests were performed for 60 s, 180 s, and 480 s of contact, at temperatures of 503 K, 523 K and 553 K (230°C, 250°C, and 280°C). After cleaning the flux residue from solidified samples, the spreading areas of Sn-Zn0.5Ga and Sn-Zn0.2Na on Al and Ni substrate were determined. Selected, solidified solder-pad couples were cross-sectioned and subjected to scanning electron microscopy with energy dispersive spectroscopy, x-ray diffraction study and synchrotron measurements of the interfacial microstructure and identification of the phases. The growth of the intermetallic Ni5Zn21 phase layer was studied at the solder/Ni substrate interface, and the kinetics of the formation and growth of the intermetallic layer were determined. The formation of interlayers was not observed on the Al pads. On the contrary, dissolution of the Al substrate and migration of Al-rich particles into the bulk of the solder were observed.

Detecting Liquefied Petroleum Gas (LPG) at Room Temperature Using ZnSnO3/ZnO Nanowire Piezo-Nanogenerator as Self-Powered Gas Sensor.

PubMed

Fu, Yongming; Nie, Yuxin; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

2015-05-20

High sensitivity, selectivity, and reliability have been achieved from ZnSnO3/ZnO nanowire (NW) piezo-nanogenerator (NG) as self-powered gas sensor (SPGS) for detecting liquefied petroleum gas (LPG) at room temperature (RT). After being exposed to 8000 ppm LPG, the output piezo-voltage of ZnSnO3/ZnO NW SPGS under compressive deformation is 0.089 V, much smaller than that in air ambience (0.533 V). The sensitivity of the SPGS against 8000 ppm LPG is up to 83.23, and the low limit of detection is 600 ppm. The SPGS has lower sensitivity against H2S, H2, ethanol, methanol and saturated water vapor than LPG, indicating good selectivity for detecting LPG. After two months, the decline of the sensing performance is less than 6%. Such piezo-LPG sensing at RT can be ascribed to the new piezo-surface coupling effect of ZnSnO3/ZnO nanocomposites. The practical application of the device driven by human motion has also been simply demonstrated. This work provides a novel approach to fabricate RT-LPG sensors and promotes the development of self-powered sensing system.

Ultraviolet/visible photodiode of nanostructure Sn-doped ZnO/Si heterojunction

NASA Astrophysics Data System (ADS)

Kheirandish, N.; Mortezaali, A.

2013-05-01

Sn doped ZnO nanostructures deposited on Si substrate with (100) orientation by spray pyrolysis method at temperature 450 °C. Sn/Zn atomic ratio varies from 0% to 5%. The scanning electron microscope measurements showed that size of particles reduce with increasing the doping concentration. The X-ray diffraction analysis revealed formation of the wurtzite phase of ZnO. I-V curves of Sn doped ZnO/Si were investigated in dark and shows diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of Sn/Zn = 5% is a good candidate to study photodiode properties in UV/visible range. Photoelectric effects have been observed under illumination monochromatic laser light with a wavelength of 325 nm and halogen lamp. Measurements demonstrate that the photodiode has high sensitivity and reproducibility to halogen light respect to laser light.

Rare-metal-free high-performance Ga-Sn-O thin film transistor

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

2017-03-01

Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm2/Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.

Rare-metal-free high-performance Ga-Sn-O thin film transistor

PubMed Central

Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

2017-01-01

Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm2/Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds. PMID:28290547

Rare-metal-free high-performance Ga-Sn-O thin film transistor.

PubMed

Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

2017-03-14

Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm 2 /Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

NASA Astrophysics Data System (ADS)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

Synthesis of ZnSnO{sub 3} nanostructure by sol gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Para, Touseef Ahmad; Reshi, Hilal Ahmad; Shelke, Vilas, E-mail: drshelke@gmail.com

2016-05-23

Zinc Stannate (ZST) with composition ZnSnO{sub 3} is known for high electron mobility, optical, piezoelectric and charge storage properties. ZST crystalizes in different lattice structures, which allows a wide range of tunablity. We demonstrate successful synthesis of ZnSnO{sub 3} nanomaterial by sol-gel method. ZnSnO{sub 3} nanomaterials were calcined and sintered at different temperatures. Powder X-ray diffraction confirmed the single phase of the nanomaterial with rhombohedral R-3 space group. The Rietveld refinement of diffraction pattern yielded lattice parameter values a=5.26Å, c=14.09Å. Raman spectroscopy revealed higher activity towards higher wavenumbers. Raman shift around 530cm{sup −1} was found to be highly structure dependent,more » most probably due to anharmonic atomic vibrations in ZnO{sub 6}/SnO{sub 6} octahedra around center of mass. Sharp Peak around 650cm{sup −1} is characteristic of ZnSnO{sub 3} molecule.« less

Morphology induced photo-degradation study of low temperature, chemically derived ZnO/SnO{sub 2} heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pal, Shreyasi, E-mail: Shreyasi.tua@gamil.com; Maiti, Soumen; Chattopadhyay, Kalyan Kumar, E-mail: kalyan-chattopadhyay@yahoo.com

2016-05-06

Rational construction of heterostructure is a key pathway to pursue highly active photocatalysts that also offers prospects to explore the relationship between structural aspect and photocatalytic efficiency. Here, we adopted a two-step wet chemical protocol for decoration of ZnO nanowires with SnO{sub 2} nanoclusters. ZnO nanowires were prepared by one pot ambient conditioned synthesis from commercial zinc powder. In sequence, synthesized ZnO nanowires were engineered with varying quantity SnO{sub 2} nanoclusters via low temperature hydrothermal method. Environmental remediation through catalytic activity of the samples was inspected taking two dyes having different ionic character (Methyl Orange and Rhodamine B) under UVmore » irradiation where the optimized hybrid displayed better performance than mono component oxides. Enhancement in catalytic performance could be enlightened by the heterostructure formation at the ZnO/SnO{sub 2} interface which in turns prolonged photogenerated carrier separation and extend the photo response range. Furthermore, the photocatalysis performance by heterostructure could be recycled for several times without noticeable decrease in their catalytic activity.« less

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

NASA Astrophysics Data System (ADS)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

Preparation & characterization of high purity Cu2 ZnSn(SxSe1-x)4 nanoparticles

NASA Astrophysics Data System (ADS)

Negash, Bethlehem G.

Research in thin film solar cells applies novel techniques to synthesize cost effective and highly efficient absorber materials in order to generate electricity directly from solar energy. Of these materials, copper zinc tin sulfoselenide (Cu2ZnSn(SxSe1-x) 4) nanoparticles have shown great promise in solar cell applications due to optimal material properties as well as low cost & relative abundance of materials.1,2 Sulfoselenide nanoparticles have also a broader impact in other industries including electronics3, LED 4, and biomedical research5. Of the many routes of manufacturing these class of semiconductors, colloidal synthesis of Cu 2ZnSn(SxSe1-x)4 offers a scalable, low cost and high-throughput route for manufacturing high efficiency thin-film solar cells. Hydrazine processed Cu2ZnSn(SxSe1-x )4 devices have reached a record power conversion efficiency (PCE) of 12.6%, much higher than the 9.6% reported for physical vapor deposition (PVD) systems.6,7. Despite high efficiencies, wet synthesis of nanoparticles, however, is made more complicated in multi-element, quaternary and quinary systems such as copper zinc tin sulfoselenide (CZTSSe) and copper indium gallium diselenide (CIGSe). One major disadvantage in these systems is growth of the desired quaternary or quinary phase in competition with unwanted binary and ternary phases with low energy of formation.8,9 Moreover, various reaction parameters such as reaction time, temperature, and choice of ligand also affect, chemical as well as physical properties of resulting nanoparticles. Understanding of the formation mechanisms of the particles is necessary in order to address some of these challenges in wet synthesis of CZTSSe nanoparticles. In this study, we investigate synthesis conditions & reaction parameters which yield high purity Cu2ZnSn(SxSe1-x) 4 nanoparticles as well as attempt to understand the growth mechanism of these nanoparticles. This was achieved by manipulating anion precursor preparation routes as

Solution-Processed Cu2ZnSn(S,Se) 4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source.

PubMed

Guo, Jing; Pei, Yingli; Zhou, Zhengji; Zhou, Wenhui; Kou, Dongxing; Wu, Sixin

2015-12-01

Solution-processed approach for the deposition of Cu2ZnSn (S,Se)4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu, Zn, Sn, S, and Se powder, forming a homogeneous CZTSSe precursor solution in a short time. Dense and compact kesterite CZTSSe thin film with high crystallinity and uniform composition was obtained by selenizing the low-temperature annealed spin-coated precursor film. Standard CZTSSe thin film solar cell based on the selenized CZTSSe thin film was fabricated and an efficiency of 6.4 % was achieved.

A Fast Responsive Ultraviolet Sensor from mSILAR-Processed Sn-ZnO

NASA Astrophysics Data System (ADS)

Thomas, Deepu; Vijayalakshmi, K. A.; Sadasivuni, Kishor Kumar; Thomas, Ajith; Ponnamma, Deepalekshmi; Cabibihan, John-John

2017-11-01

Microwave-assisted successive ionic layer adsorption and reaction was employed to synthesize Sn-ZnO (tin-doped zinc oxide), and its sensitivity to ultraviolet radiation is compared with zinc oxide (ZnO). The sensing films were made by the dip-coated method on an indium titanium oxide glass substrate, and the sensing performance was monitored using the 300-700 nm wavelength of UV-Vis light. Excellent sensitivity and recovery were observed for the Sn-doped ZnO sensor device, especially at 380 nm wavelength of ultraviolet (UV) light (response and recovery time 2.26 s and 8.63 s, respectively, at 5 V bias voltage). The variation in photocurrent with respect to dark and light illumination atmosphere was well illustrated based on the Schottky and inter-particle network effects. Doping of Sn on ZnO nanoparticles varied the surface roughness and crystallite size as observed from scanning electron microscopic and x-ray diffraction studies. Here, we demonstrate a simple and economical fabrication technique for designing a high-performance UV light sensor. The developed device works at room temperature with high durability and stability.

Piezo-/dielectric properties of perovskite-structure high-temperature relaxor ferroelectrics: The Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} ternary ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Tao; University of Chinese Academy of Sciences, Beijing 100049; Long, Xifa, E-mail: lxf@fjirsm.ac.cn

2014-03-01

Graphical abstract: - Highlights: • Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}-based ternary ferroelectric ceramics were prepared by solid-state synthesis method. • Morphotropic phase boundary region has been determined by XRD, di-/piezoelectric properties. • The compositions near MPB region exhibit excellent piezoelectric properties. - Abstract: A new compositional system of relaxor ferroelectrics was investigated based on the high piezoelectricity Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} ferroelectric perovskite family. Compositions were fabricated near an estimated morphotropic phase boundary (MPB) of the Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} (PLZNT) ternary system by a two-step synthetic process. Their structures have been analyzed by means ofmore » X-ray diffraction technique. On the basis of X-ray powder diffraction, the morphotropic phase boundary (MPB) region for the ternary system was obtained. The Curie temperature T{sub C} of ternary system varied from 240 °C to 330 °C and the coercive fields E{sub c}s > 10 kV/cm. The values of piezoelectric coefficients d{sub 33} vary in the range of 260–450 pC/N with different PZN contents. It is worth noting that the optimum compositions were located at MPB region but near the tetragonal phase. The new PLZNT ceramics exhibit wider range of T{sub C}s and E{sub c}s, making it a promising material for high-powder ultrasound transducers using in a large temperature range.« less

High crystalline Cu2ZnSnS4 semiconductor prepared from low toxicity ethanol-based precursors

NASA Astrophysics Data System (ADS)

Munir, Badrul; Prastyo, Bayu Eko; Nurjaya, Dwi Marta; Muslih, Ersan Yudhapratama; Alfauzan, Sahri Karim

2017-01-01

At this moment, we present a new, cost-effective, and environmentally friendly method of preparing a high crystalline Cu2ZnSnS4 (CZTS) absorber layer for thin film solar cells using ethanol-based solutions. Ethanolamine (ETA) and 2-mercaptopropionic acid (MPA) were studied as a stabilizer and to improve wetting ability of the precursors during the deposition process. Cu2ZnSnS4 precursors are deposited onto soda lime glass using spin coater in different molar of cations in the precursor. The effects of a precursor system, ethanol-ETA-MPA, and ethanol-MPA, on the structure, morphology, composition and optical properties of CZTS thin films have been investigated in details. X-ray diffraction and energy-dispersive X-ray spectroscopy analyses confirmed the successful fabrication of high crystalline Cu2ZnSnS4 kesterite phase. The crystallinity of CZTS is continue increasing before reaching 2.2 molar cations of the ethanol-MPA precursors. The crystallinity of ethanol-ETA-MPA precursors remains similar in the experiment using 1.2 molar and 1.6 molars. The highest crystallinity was achieved using 2 molar cations of the ethanol-MPA precursor. Its band gap energy is found to be around 1.4 eV. The SEM micrographs of CZTS film shows the average grain size around 1.5 µm and some porosity which indicated the room of improvement. The high-crystallinity CZTS achieved in the present study brings a low-cost absorber semiconductor one step closer to practical use.

Sulfidation Roasting of Hemimorphite with Pyrite for the Enrichment of Zn and Pb

NASA Astrophysics Data System (ADS)

Min, Xiao-Bo; Xue, Ke; Ke, Yong; Zhou, Bo-Sheng; Li, Yang-Wen-Jun; Wang, Qing-Wei

2016-09-01

With the increasing consumption of zinc and the depletion of zinc sulfide ores, the exploitation of low-grade zinc oxide ores may be important for the sustainability of the zinc industry. Hemimorphite, a zinc hydroxyl silicate hydrate, is a significant source of Zn and Pb. It is difficult to obtain Zn and Pb from the hemimorphite using traditional technology. In this work, for the first time, sulfidation roasting of hemimorphite with pyrite was studied for the enrichment of Zn and Pb by a flotation process. Four stages of sulfidation roasting were determined based on x-ray diffraction and thermogravimetry analysis. Then, the effects of sulfidation temperature, pyrite dosage and reaction time on the sulfidation percentages were investigated at the laboratory scale. The experimental results showed that the sulfidation percentages of Pb and Zn were as high as 98.08% and 90.55% under optimum conditions, respectively. Finally, a flotation test was performed to enrich Zn and Pb in the sulfidation product. A flotation concentrate with 8.78% Zn and 9.25% Pb was obtained, and the recovery of Zn and Pb reached 56.14% and 75.94%, respectively.

Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

NASA Astrophysics Data System (ADS)

Janicek, Petr; Niang, Kham M.; Mistrik, Jan; Palka, Karel; Flewitt, Andrew J.

2017-11-01

ZnO:Sn thin films were deposited onto thermally oxidized silicon substrates using a remote plasma reactive sputtering. Their optical constants (refractive index n and extinction coefficient k) were determined from ellipsometric data recorded over a wide spectral range (0.05-6 eV). Parametrization of ZnO:Sn complex dielectric permittivity consists of a parameterized semiconductor oscillator function describing the short wavelength absorption edge, a Drude oscillator describing free carrier absorption in near-infrared part of spectra and a Lorentz oscillator describing the long wavelength absorption edge and intra-band absorption in the ultra-violet part of the spectra. Using a Mott-Davis model, the increase in local disorder with increasing Sn doping is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, an increase in the centroid distance of the valence and conduction bands with increasing Sn doping is shown and only slight increase in intensity of the inter-band optical transition due to Sn doping occurs. The Drude model applied in the near-infrared part of the spectra revealed the free carrier concentration and mobility of ZnO:Sn. Results show that the range of transparency of prepared ZnO:Sn layers is not dramatically affected by Sn doping whereas electrical conductivity could be controlled by Sn doping. Refractive index in the transparent part is comparable with amorphous Indium Gallium Zinc Oxide allowing utilization of prepared ZnO:Sn layers as an indium-free alternative.

Free-Standing Undoped ZnO Microtubes with Rich and Stable Shallow Acceptors

PubMed Central

Wang, Qiang; Yan, Yinzhou; Zeng, Yong; Lu, Yue; Chen, Liang; Jiang, Yijian

2016-01-01

Fabrication of reliable large-sized p-ZnO is a major challenge to realise ZnO-based electronic device applications. Here we report a novel technique to grow high-quality free-standing undoped acceptor-rich ZnO (A-ZnO) microtubes with dimensions of ~100 μm (in diameter) × 5 mm (in length) by optical vapour supersaturated precipitation. The A-ZnO exhibits long lifetimes (>1 year) against compensation/lattice-relaxation and the stable shallow acceptors with binding energy of ~127 meV are confirmed from Zn vacancies. The A-ZnO provides a possibility for a mimetic p-n homojunction diode with n+-ZnO:Sn. The high concentrations of holes in A-ZnO and electrons in n+-ZnO make the dual diffusion possible to form a depletion layer. The diode threshold voltage, turn-on voltage, reverse saturated current and reverse breakdown voltage are 0.72 V, 1.90 V, <10 μA and >15 V, respectively. The A-ZnO also demonstrates quenching-free donor-acceptor-pairs (DAP) emission located in 390–414 nm with temperature of 270–470 K. Combining the temperature-dependent DAP violet emission with native green emission, the visible luminescence of A-ZnO microtube can be modulated in a wide region of colour space across white light. The present work opens up new opportunities to achieve ZnO with rich and stable acceptors instead of p-ZnO for a variety of potential applications. PMID:27263856

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE PAGES

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R; ...

2017-08-12

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Ductile fracture mechanism of low-temperature In-48Sn alloy joint under high strain rate loading.

PubMed

Kim, Jong-Woong; Jung, Seung-Boo

2012-04-01

The failure behaviors of In-48Sn solder ball joints under various strain rate loadings were investigated with both experimental and finite element modeling study. The bonding force of In-48Sn solder on an Ni plated Cu pad increased with increasing shear speed, mainly due to the high strain-rate sensitivity of the solder alloy. In contrast to the cases of Sn-based Pb-free solder joints, the transition of the fracture mode from a ductile mode to a brittle mode was not observed in this solder joint system due to the soft nature of the In-48Sn alloy. This result is discussed in terms of the relationship between the strain-rate of the solder alloy, the work-hardening effect and the resulting stress concentration at the interfacial regions.

High-Temperature and High-Pressure Study of Electronic and Thermal Properties of PbTaO3 and SnAlO3 Metal Perovskites by Density Functional Theory Calculations

NASA Astrophysics Data System (ADS)

Khandy, Shakeel Ahmad; Islam, Ishtihadah; Ganai, Zahid Saleem; Gupta, Dinesh C.; Parrey, Khursheed Ahmad

2018-01-01

First principles calculations on the thermodynamic properties of PbTaO3 and SnAlO3 in a temperature range from 0 K to 800 K and pressure range from 0 GPa to 30 GPa have been carried out within the framework of density functional theory (DFT). The band structures of these oxides at different pressures display an increase in metallic character with a concomitant decrease in lattice constants, while the bulk modulus increases with increasing pressure. The thermal concert of these materials has been analyzed in terms of the temperature and pressure variation in Debye temperature, thermal expansion, entropy, and the Grüneisen parameter. Debye temperatures have been calculated from the elastic parameters as well as the quasi-harmonic Debye model, which are 339.07 GPa for PbTaO3 and 714.36 GPa for SnAlO3.

Calculation of point defect concentration in Cu2ZnSnS4: Insights into the high-temperature equilibrium and quenching

NASA Astrophysics Data System (ADS)

Kosyak, V.; Postnikov, A. V.; Scragg, J.; Scarpulla, M. A.; Platzer-Björkman, C.

2017-07-01

Herein, we study the native point defect equilibrium in Cu2ZnSnS4 (CZTS) by applying a statistical thermodynamic model. The stable chemical-potential space (SCPS) of CZTS at an elevated temperature was estimated directly, on the basis of deviations from stoichiometry calculated for the different combinations of chemical potential of the components. We show that the SCPS is narrow due to high concentration of (" separators="|VCu --ZnC u + ) complex which is dominant over other complexes and isolated defects. The CZTS was found to have p-type conductivity for both stoichiometric and Cu-poor/Zn-rich composition. It is established that the reason for this is that the majority of donor-like ZnC u + antisites are involved in the formation of (" separators="|VCu --ZnC u + ) complex making CuZ n - dominant and providing p-type conductivity even for Cu-poor/Zn-rich composition. However, our calculation reveals that the hole concentration is almost insensitive to the variation of the chemical composition within the composition region of the single-phase CZTS due to nearly constant concentration of dominant charged defects. The calculations for the full equilibrium and quenching indicate that hole concentration is strongly dependent on the annealing temperature and decreases substantially after the drastic cooling. This means that the precise control of annealing temperature and post-annealing cooling rate are critical for tuning the electrical properties of CZTS.

In vitro selection of high temperature Zn(2+)-dependent DNAzymes.

PubMed

Nelson, Kevin E; Bruesehoff, Peter J; Lu, Yi

2005-08-01

In vitro selection of Zn(2+)-dependent RNA-cleaving DNAzymes with activity at 90 degrees C has yielded a diverse spool of selected sequences. The RNA cleavage efficiency was found in all cases to be specific for Zn(2+) over Pb(2+), Ca(2+), Cd(2+), Co(2+), Hg(2+), and Mg(2+). The Zn(2+)-dependent activity assay of the most active sequence showed that the DNAzyme possesses an apparent Zn(2+)-binding dissociation constant of 234 muM and that its activity increases with increasing temperatures from 50-90 degrees C. A fit of the Arrhenius plot data gave E(a) = 15.3 kcal mol(-1). Surprisingly, the selected Zn(2+)-dependent DNAzymes showed only a modest (approximately 3-fold) activity enhancement over the background rate of cleavage of random sequences containing a single embedded ribonucleotide within an otherwise DNA oligonucleotide. The result is attributable to the ability of DNA to sustain cleavage activity at high temperature with minimal secondary structure when Zn(2+) is present. Since this effect is highly specific for Zn(2+), this metal ion may play a special role in molecular evolution of nucleic acids at high temperature.

Growth experiment of narrow band-gap semiconductor PbSnTe single crystals in space (M-1)

NASA Technical Reports Server (NTRS)

Yamada, Tomoaki

1993-01-01

An experiment on crystal growth of Pb(1-x)Sn(x)Te in microgravity is planned. This material is an alloy of the compound semiconductors PbTe and SnTe. It is a promising material for infrared diode lasers and detectors in the wavelength region between 6 and 30 micron. Since the electrical properties of Pb(1-x)Sn(x)Te depend greatly on the Pb/Sn ratio and crystalline defects as well as impurity concentration, homogeneous, defect-free, high-quality crystals are anticipated. Although many growth methods, such as the pulling method, the Bridgman method, the vapor growth method, etc., have been applied to the growth of Pb(1-x)Sn(x)Te, large, homogeneous, low-defect-density crystals have not yet been grown on Earth. The unsuccessful results were caused by buoyancy-driven convection in the fluids induced by the specific gravity difference between heated and cooled fluids on Earth. A crystal is grown by cooling the melt from one end of the ampoule. In crystal growth from the melt, about 30 percent of the SnTe in the melt is rejected at the solid-liquid interface during solidification. On Earth, the rejected SnTe is completely mixed with the remaining melt by convection in the melt. Therefore, SnTe concentration in the melt, and accordingly in the crystal, increases as the crystal grows. In the microgravity environment, buoyancy-driven convection is suppressed because the specific gravity difference is negligible. In that case, the rejected SnTe remains at the solid-liquid interface and its concentration increases only at the interface. If the growth rate is higher than the PbTe-SnTe interdiffusion rate, the amount of SnTe which diffuses from the interface into the melt increases as SnTe piles up at the interface, and finally it balances the amount of rejected SnTe during solidification, resulting in steady-state SnTe transportation at the interface. By using this principle, compositionally homogeneous crystals can be grown. Furthermore, low-defect-density crystals will be

Ab initio-aided CALPHAD thermodynamic modeling of the Sn-Pb binary system under current stressing

PubMed Central

Lin, Shih-kang; Yeh, Chao-kuei; Xie, Wei; Liu, Yu-chen; Yoshimura, Masahiro

2013-01-01

Soldering is an ancient process, having been developed 5000 years ago. It remains a crucial process with many modern applications. In electronic devices, electric currents pass through solder joints. A new physical phenomenon – the supersaturation of solders under high electric currents – has recently been observed. It involves (1) un-expected supersaturation of the solder matrix phase, and (2) the formation of unusual “ring-shaped” grains. However, the origin of these phenomena is not yet understood. Here we provide a plausible explanation of these phenomena based on the changes in the phase stability of Pb-Sn solders. Ab initio-aided CALPHAD modeling is utilized to translate the electric current-induced effect into the excess Gibbs free energies of the phases. Hence, the phase equilibrium can be shifted by current stressing. The Pb-Sn phase diagrams with and without current stressing clearly demonstrate the change in the phase stabilities of Pb-Sn solders under current stressing. PMID:24060995

Photoluminescence study of ZnS and ZnS:Pb nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Virpal,, E-mail: virpalsharma.sharma@gmail.com; Hastir, Anita; Kaur, Jasmeet

2015-05-15

Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered atmore » 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states.« less

Negative differential resistance and resistive switching in SnO2/ZnO interface

NASA Astrophysics Data System (ADS)

Pant, Rohit; Patel, Nagabhushan; Nanda, K. K.; Krupanidhi, S. B.

2017-09-01

We report a very stable negative differential resistance (NDR) and resistive switching (RS) behavior of highly transparent thin films of the SnO2/ZnO bilayer, deposited by magnetron sputtering. When this bilayer of SnO2/ZnO was annealed at temperatures above 400 °C, ZnO diffuses into SnO2 at the threading dislocations and gaps between the grain boundaries, leading to the formation of a ZnO nanostructure surrounded by SnO2. Such a configuration forms a resonant tunneling type structure with SnO2/ZnO/SnO2…….ZnO/SnO2 interface formation. Interestingly, the heterostructure exhibits a Gunn diode-like behavior and shows NDR and RS irrespective of the voltage sweep direction, which is the characteristic of unipolar devices. A threshold voltage of ˜1.68 V and a peak-to-valley ratio of current ˜2.5 are observed for an electrode separation of 2 mm, when the bias is swept from -5 V to +5 V. It was also observed that the threshold voltage can be tuned with changing distance between the electrodes. The device shows a very stable RS with a uniform ratio of about 3.4 between the high resistive state and the low resistive state. Overall, the results demonstrate the application of SnO2/ZnO bilayer thin films in transparent electronics.

The effect of micro alloying on the microstructure evolution of Sn-Ag-Cu lead-free solder

NASA Astrophysics Data System (ADS)

Werden, Jesse

The microelectronics industry is required to obtain alternative Pb-free soldering materials due to legal, environmental, and technological factors. As a joining material, solder provides an electrical and mechanical support in electronic assemblies and therefore, the properties of the solder are crucial to the durability and reliability of the solder joint and the function of the electronic device. One major concern with new Pb-free alternatives is that the microstructure is prone to microstructural coarsening over time which leads to inconsistent properties over the device's lifetime. Power aging the solder is a common method of stabilizing the microstructure for Pb-based alloys, however, it is unclear if this will be an appropriate solution to the microstructural coarsening of Pb-free solders. The goal of this work is to develop a better understanding of the coarsening process in new solder alloys and to suggest methods of stabilizing the solder microstructure. Microalloying is one potential solution to the microstructural coarsening problem. This experiment consists of a microstructural coarsening study of SAC305 in which each sample has been alloyed with one of three different solutes, directionally solidified at 100microm/s, and then aged at three different temperatures over a total period of 20 days. There are several important conclusions from this experiment. First, the coarsening kinetics of the intermetallics in the ternary eutectic follow the Ostwald ripening model where r3 in proprotional to t for each alloying constituent. Second, the activation energy for coarsening was found to be 68.1+/-10.3 kJ/mol for the SAC305 samples, Zn had the most significant increase in the activation energy increasing it to 88.8+/-34.9 kJ/mol for the SAC+Zn samples, Mn also increased the activation energy to 83.2+/-20.8 kJ/mol for the SAC+Mn samples, and Sb decreased the activation energy to 48.0+/-3.59 kJ/mol for the SAC+Sb samples. Finally, it was found that the

Effects of Isothermal Aging on the Thermal Expansion of Several Sn-Based Lead-Free Solder Alloys

NASA Astrophysics Data System (ADS)

Hasnine, M.; Bozack, M. J.

2018-03-01

In this paper, effects of high-temperature aging on the thermal expansion behavior of several lead-free alloys SAC305, SAC387, Sn-3.5Ag, SnCu, SN100C (SnCu-Ni-Ge) and SnCu-0.01Ge have been explored. The coefficients of thermal expansion (CTEs) of the alloys have been experimentally determined over the temperature range 30-150 °C after isothermal aging at 125 °C for up to 30 days (720 h). The CTE values of SAC305, SAC387 and Sn-3.5Ag increase by 8-16% after 30 days of aging, while the CTE values of SnCu, SnCu-Ge and SN100C solders increase by only 3-6%. The CTE evolution of lead-free solders can be explained by microstructural changes observed during isothermal aging, which causes coarsening of various phases of the solder. As the phases coarsen, dislocation movement proceeds with a consequent increase in the average interparticle distance. The observation of CTE increases during isothermal aging suggests potential reliability problems for lead-free solder joints subjected to long-term aging exposures at high temperatures.

Point defects in Cu 2ZnSnSe 4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition

DOE PAGES

Schelhas, L. T.; Stone, K. H.; Harvey, S. P.; ...

2017-07-25

We report that the interest in Cu 2ZnSn(S,Se) 4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se 2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a V oc deficit, where the V oc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. Tomore » directly determine the level of Cu/Zn ordering, we have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. Finally, to understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.« less

Investigation of temperature and concentration oscillations in the directional solidification of Pb-Sn-Te

NASA Technical Reports Server (NTRS)

Anderson, T. J.; Narayanan, R.

1987-01-01

Directional solidification of the pseudobinary compound semiconductor material Pb sub 1-x Sn sub x Te by the Bridgman crystal growth process will be studied. Natural convection in the molten sample will be visualized with a novel electrochemical cell technique that employs the solid electrolyte material yttria-stabilized zirconia. Mass transfer by both diffusion and convection will be measured by detecting the motion of oxygen tracer in the liquid. Additional applications for electrochemical cells in semiconductor crystal growth are suggested. Unsteady convection in the melt will also be detected by the appearance of temperature oscillations. The purpose of this study is to experimentally characterize the overstable conditions for a Pb sub 1-x Sn sub x Te melt in the vertical Bridgman crystal growth technique and use a linear analysis to predict the onset of convection for this system.

Well-crystalline porous ZnO-SnO2 nanosheets: an effective visible-light driven photocatalyst and highly sensitive smart sensor material.

PubMed

Lamba, Randeep; Umar, Ahmad; Mehta, S K; Kansal, Sushil Kumar

2015-01-01

This work demonstrates the synthesis and characterization of porous ZnO-SnO2 nanosheets prepared by the simple and facile hydrothermal method at low-temperature. The prepared nanosheets were characterized by several techniques which revealed the well-crystallinity, porous and well-defined nanosheet morphology for the prepared material. The synthesized porous ZnO-SnO2 nanosheets were used as an efficient photocatalyst for the photocatalytic degradation of highly hazardous dye, i.e., direct blue 15 (DB 15), under visible-light irradiation. The excellent photocatalytic degradation of prepared material towards DB 15 dye could be ascribed to the formation of ZnO-SnO2 heterojunction which effectively separates the photogenerated electron-hole pairs and possess high surface area. Further, the prepared porous ZnO-SnO2 nanosheets were utilized to fabricate a robust chemical sensor to detect 4-nitrophenol in aqueous medium. The fabricated sensor exhibited extremely high sensitivity of ~ 1285.76 µA/mmol L(-1)cm(-2) and an experimental detection limit of 0.078 mmol L(-1) with a linear dynamic range of 0.078-1.25 mmol L(-1). The obtained results confirmed that the prepared porous ZnO-SnO2 nanosheets are potential material for the removal of organic pollutants under visible light irradiation and efficient chemical sensing applications. Copyright © 2014 Elsevier B.V. All rights reserved.

A highly sensitive ethanol sensor based on mesoporous ZnO-SnO2 nanofibers.

PubMed

Song, Xiaofeng; Wang, Zhaojie; Liu, Yongben; Wang, Ce; Li, Lijuan

2009-02-18

A facile and versatile method for the large-scale synthesis of sensitive mesoporous ZnO-SnO(2) (m-Z-S) nanofibers through a combination of surfactant-directed assembly and an electrospinning approach is reported. The morphology and the structure were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), x-ray diffraction (XRD), and nitrogen adsorption-desorption isotherm analysis. The results showed that the diameters of fibers ranged from 100 to 150 nm with mixed structures of wurtzite (ZnO) and rutile (SnO(2)), and a mesoporous structure was observed in the m-Z-S nanofibers. The sensor performance of the prepared m-Z-S nanofibers was measured for ethanol. It is found that the mesoporous fiber film obtained exhibited excellent ethanol sensing properties, such as high sensitivity, quick response and recovery, good reproducibility, and linearity in the range 3-500 ppm.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Large linear magnetoresistance in topological crystalline insulator Pb{sub 0.6}Sn{sub 0.4}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.

2016-01-15

Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Largemore » non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation of the carrier mobility.« less

Characterization of Low-Melting-Point Sn-Bi-In Lead-Free Solders

NASA Astrophysics Data System (ADS)

Li, Qin; Ma, Ninshu; Lei, YongPing; Lin, Jian; Fu, HanGuang; Gu, Jian

2016-11-01

Development of lead-free solders with low melting temperature is important for substitution of Pb-based solders to reduce direct risks to human health and the environment. In the present work, Sn-Bi-In solders were studied for different ratios of Bi and Sn to obtain solders with low melting temperature. The microstructure, thermal properties, wettability, mechanical properties, and reliability of joints with Cu have been investigated. The results show that the microstructures of the Sn-Bi-In solders were composed of β-Sn, Bi, and InBi phases. The intermetallic compound (IMC) layer was mainly composed of Cu6Sn5, and its thickness increased slightly as the Bi content was increased. The melting temperature of the solders was around 100°C to 104°C. However, when the Sn content exceeded 50 wt.%, the melting range became larger and the wettability became worse. The tensile strength of the solder alloys and solder joints declined with increasing Bi content. Two fracture modes (IMC layer fracture and solder/IMC mixed fracture) were found in solder joints. The fracture mechanism of solder joints was brittle fracture. In addition, cleavage steps on the fracture surface and coarse grains in the fracture structure were comparatively apparent for higher Bi content, resulting in decreased elongation for both solder alloys and solder joints.

Volatilization, transport and sublimation of metallic and non-metallic elements in high temperature gases at Merapi Volcano, Indonesia

USGS Publications Warehouse

Symonds, R.B.; Rose, William I.; Reed, M.H.; Lichte, F.E.; Finnegan, David L.

1987-01-01

Condensates, silica tube sublimates and incrustations were sampled from 500-800??C fumaroles and lava samples were collected at Merapi Volcano, Indonesia in Jan.-Feb., 1984. With respect to the magma, Merapi gases are enriched by factors greater than 105 in Se, Re, Bi and Cd; 104-105 in Au, Br, In, Pb and W; 103-104 in Mo, Cl, Cs, S, Sn and Ag; 102-103 in As, Zn, F and Rb; and 1-102 in Cu, K, Na, Sb, Ni, Ga, V, Fe, Mn and Li. The fumaroles are transporting more than 106 grams/day ( g d) of S, Cl and F; 104-106 g/d of Al, Br, Zn, Fe, K and Mg; 103-104 g d of Pb, As, Mo, Mn, V, W and Sr; and less than 103 g d of Ni, Cu, Cr, Ga, Sb, Bi, Cd, Li, Co and U. With decreasing temperature (800-500??C) there were five sublimate zones found in silica tubes: 1) cristobalite and magnetite (first deposition of Si, Fe and Al); 2) K-Ca sulfate, acmite, halite, sylvite and pyrite (maximum deposition of Cl, Na, K, Si, S, Fe, Mo, Br, Al, Rb, Cs, Mn, W, P, Ca, Re, Ag, Au and Co); 3) aphthitalite (K-Na sulfate), sphalerite, galena and Cs-K. sulfate (maximum deposition of Zn, Bi, Cd, Se and In; higher deposition of Pb and Sn); 4) Pb-K chloride and Na-K-Fe sulfate (maximum deposition of Pb, Sn and Cu); and 5) Zn, Cu and K-Pb sulfates (maximum deposition of Pb, Sn, Ti, As and Sb). The incrustations surrounding the fumaroles are also chemically zoned. Bi, Cd, Pb, W, Mo, Zn, Cu, K, Na, V, Fe and Mn are concentrated most in or very close to the vent as expected with cooling, atmospheric contamination and dispersion. The highly volatile elements Br, Cl, As and Sb are transported primarily away from high temperature vents. Ba, Si, P, Al, Ca and Cr are derived from wall rock reactions. Incomplete degassing of shallow magma at 915??C is the origin of most of the elements in the Merapi volcanic gas, although it is partly contaminated by particles or wall rock reactions. The metals are transported predominantly as chloride species. As the gas cools in the fumarolic environment, it becomes saturated

On the possibility of room temperature ferromagnetism on chunk-shape BaSnO3/ZnO core/shell nanostructures

NASA Astrophysics Data System (ADS)

Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

2018-04-01

Core/shell BaSnO3/ZnO (BS-ZO) nanostructures were prepared by oxalate precipitation method and wet-chemical method. BaSnO3 (BSO) cubic perovskite structure and ZnO hexagonal wurtzite structure were confirmed by X-ray diffraction (XRD). The crystallite sizes is 23 nm, 29 nm and 27 nm for BSO, ZnO and BS-ZO, respectively. Chunk-shape and cuboids morphology observed from scanning electron microscopy (SEM) analysis. The magnetic properties were studied by VSM for bare and core-shell nano systems and the room temperature ferromagnetism observed for core-shell nanostructures. The BSO/ZnO shows enhanced coercivity and saturated magnetization as compared with BSO and ZnO nanostructures.

Embedding ultrafine ZnSnO3 nanoparticles into reduced graphene oxide composites as high-performance electrodes for lithium ion batteries

NASA Astrophysics Data System (ADS)

Ma, Yuhang; Jiang, Ranran; Li, Dan; Dong, Yutao; Liu, Yushan; Zhang, Jianmin

2018-05-01

Ultrafine ZnSnO3 nanoparticles, with an average diameter of 45 nm, homogeneously grown on reduced graphene oxide (rGO) have been successfully fabricated via methods of low temperature coprecipitation, colloid electrostatic self-assembly, and hydrothermal treatment. The uniformly distributed ZnSnO3 nanocrystals could inhibit the restacking of rGO sheets. In turn, the existence of rGO could hinder the growth and aggregation of ZnSnO3 nanoparticles in the synthesis process, increase the conductivity of the composite, and buffer the volume expansion of the ZnSnO3 nanocrystals upon lithium ion insertion and extraction. The obtained ZnSnO3/rGO exhibited superior cycling stability with a discharge/charge capacity of 718/696 mA h g-1 after 100 cycles at a current density of 0.1 A g-1.

The Influence of Processing on Strengthening Mechanisms in Pb-Free Solder Joints

NASA Astrophysics Data System (ADS)

Mutuku, Francis; Arfaei, Babak; Cotts, Eric J.

2017-04-01

The number, and the spacing, of Ag3Sn precipitates in Sn-Ag-Cu/Cu solder joints were related to separate processing parameters. The mechanical properties of an individual solder joint were directly related to the resulting distribution of different dispersoids in the joint. As the number of Ag3Sn precipitates increased, so did solder joint strength and shear fatigue lifetime. The room-temperature shear fatigue lifetime was inversely correlated with the separation between Ag3Sn precipitates. Bi and Sb solid solution strengthening was found to result in significantly larger values of shear strength and shear fatigue lifetime for one Pb-free solder. Room-temperature shear fatigue lifetime tests were identified as a relatively straightforward, yet sensitive means to gain insight into the reliability of Sn-Ag-Cu (SAC) solder joints.

Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

2010-12-01

We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.

Synergetic effect of Zn substitution on the electron and phonon transport in Mg2Si0.5Sn0.5-based thermoelectric materials.

PubMed

Gao, Hongli; Zhu, Tiejun; Zhao, Xinbing; Deng, Yuan

2014-10-07

Mg2Si1-xSnx alloys are a prospective material for thermoelectric generators at moderate temperatures. The thermoelectric properties of Mg2Si0.5Sn0.5-based thermoelectric materials with only Zn substitution or Zn/Sb co-doping were investigated. Isoelectronic Zn substitution did not affect the carrier concentration, but improved the carrier mobility. Zn atoms incorporated into a Sb-doped Mg2Si0.5Sn0.5 matrix simultaneously boosted the power factor and suppressed the lattice thermal conductivity, leading to an enhancement of the thermoelectric figure of merit ZT of the resulting bulk materials. The interplay between the electron and phonon transport of Mg2Si0.5Sn0.49Sb0.01 substituted with Zn at Mg sites results in an enhancement of the ZT by 25% at ∼730 K, from ZT≈ 0.8 in Mg2Si0.5Sn0.49Sb0.01 to ZT≈ 1.0 in Mg1.98Zn0.02Si0.5Sn0.49Sb0.01. Solid solutions in the Mg2Si-Mg2Sn system appear to be more promising for thermoelectric applications.

Detection of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases in co-evaporated Cu2ZnSnSe4 thin-films

NASA Astrophysics Data System (ADS)

Schwarz, Torsten; Marques, Miguel A. L.; Botti, Silvana; Mousel, Marina; Redinger, Alex; Siebentritt, Susanne; Cojocaru-Mirédin, Oana; Raabe, Dierk; Choi, Pyuck-Pa

2015-10-01

Cu2ZnSnSe4 thin-films for photovoltaic applications are investigated using combined atom probe tomography and ab initio density functional theory. The atom probe studies reveal nano-sized grains of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 composition, which cannot be assigned to any known phase reported in the literature. Both phases are considered to be metastable, as density functional theory calculations yield positive energy differences with respect to the decomposition into Cu2ZnSnSe4 and ZnSe. Among the conceivable crystal structures for both phases, a distorted zinc-blende structure shows the lowest energy, which is a few tens of meV below the energy of a wurtzite structure. A band gap of 1.1 eV is calculated for both the Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases. Possible effects of these phases on solar cell performance are discussed.

Effects of Sn Addition on the Microstructures and Mechanical Properties of Mg-6Zn-3Cu- xSn Magnesium Alloys

NASA Astrophysics Data System (ADS)

Zhang, Tao; Shen, Jun; Sang, Jia-Xin; Li, Yang; He, Pei-Pei

2015-08-01

In this paper, Mg-6Zn-3Cu- xSn (ZC63- xSn) magnesium alloys with different Sn contents (0, 1, 2, 4 wt pct) were fabricated and subjected to different heat treatments. The microstructures and mechanical properties of the obtained ZC63- xSn samples were investigated by optical microscopy, X-ray diffraction, scanning electron microscopy, Vickers hardness testing, and tensile testing. It was found that the As-cast Mg-6Zn-3Cu (ZC63) magnesium alloy mainly contained α-Mg grains and Mg(Zn,Cu) particles. Sn dissolved in α-Mg grains when Sn content was below 2 wt pct while Mg2Sn phase forms in the case of Sn content was above 4 wt pct. Addition of Sn refined both α-Mg grains and Mg(Zn,Cu) particles, and increased the volume fraction of Mg(Zn,Cu) particles. Compared with the Sn-free alloy, the microhardness of Sn-containing alloys increased greatly and that of As-extrude ZC63-4Sn sample achieved the highest value. The strength of ZC63 magnesium alloy was significantly enhanced because of Sn addition, which was attributed to grain refinement strengthening, solid solution strengthening, and precipitation strengthening. Furthermore, the ultimate yield stress, yield strength, and elongation of ZC63- xSn magnesium alloys were increased owing to the deceasing grain size induced by extrusion process.

Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

NASA Astrophysics Data System (ADS)

Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

2018-04-01

The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

NASA Astrophysics Data System (ADS)

Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

2012-05-01

The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films

DOE PAGES

Senabulya, Nancy; Feldberg, Nathaniel; Makin, Robert. A.; ...

2016-09-22

Here, we report on the crystal structure of epitaxial ZnSnN 2 films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO 2) substrates. X-ray diffraction measurements performed on ZnSnN 2 films deposited on LiGaO 2 substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2 1a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2 1a symmetry is imposed on the ZnSnN 2 films by the LiGaO 2 substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phasemore » in films grown at high substrate temperatures ~550°C and low values of nitrogen flux ~10 –5 Torr is observed in ZnSnN 2 films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.« less

Corrosion Behaviour of Sn-based Lead-Free Solders in Acidic Solution

NASA Astrophysics Data System (ADS)

Nordarina, J.; Mohd, H. Z.; Ahmad, A. M.; Muhammad, F. M. N.

2018-03-01

The corrosion properties of Sn-9(5Al-Zn), Sn-Cu and SAC305 were studied via potentiodynamic polarization method in an acidic solution of 1 M hydrochloric acid (HCl). Sn-9(5Al-Zn) produced different polarization profile compared with Sn-Cu and SAC305. The morphological analysis showed that small, deep grooves shaped of corrosion product formed on top of Sn-9(5Al-Zn) solder while two distinctive structures of closely packed and loosely packed corrosion product formed on top of Sn-Cu and SAC305 solder alloys. Phase analysis revealed the formations of various corrosion products such as SnO and SnO2 mainly dominant on surface of solder alloys after potentiodynamic polarization in 1 M hydrochloric acid (HCl).

Electrical Transport Properties of Single-Crystalline β-Zn4Sb3 Prepared Through the Zn-Sn Mixed-Flux Method

NASA Astrophysics Data System (ADS)

Liu, Hongxia; Deng, Shuping; Shen, Lanxian; Wang, Jinsong; Feng, Cheng; Deng, Shukang

2017-03-01

β-Zn4Sb3 is a promising p-type thermoelectric material for utilization in moderate temperatures. This study prepares a group of single-crystalline β-Zn4Sb3 samples using the Zn-Sn mixed-flux method based on the stoichiometric ratios of Zn4+ x Sb3Sn y . The effect of Zn-to-Sn proportion in the flux on the structure and electrical transport properties is investigated. All samples are strip-shaped single crystals of different sizes. The actual Zn content of the present samples is improved (>3.9) compared with that of the samples prepared through the Sn flux method. Larger lattice parameters are also obtained. The carrier concentration of all the samples is in the order of over 1019 cm-3. With increasing Sn rate in the flux, this carrier concentration decreases, whereas mobility is significantly enhanced. The electrical conductivity and Seebeck coefficients of all the samples exhibit a behavior that of a degenerate semiconductor transport. Electrical conductivity initially increases and then decreases as the Sn ratio in the flux increases. The electrical conductivity of the x: y = 5:1 sample reaches 6.45 × 104 S m-1 at 300 K. Benefitting from the electrical conductivity and Seebeck coefficient, the flux proportion of the x: y = 7:1 sample finally achieves the highest power factor value of 1.4 × 10-3 W m-1 K-2 at 598 K.

Fabrication of solar cells based on Cu2ZnSnS4 prepared from Cu2SnS3 synthesized using a novel chemical procedure

NASA Astrophysics Data System (ADS)

Correa, John M.; Becerra, Raúl A.; Ramírez, Asdrubal A.; Gordillo, Gerardo

2016-11-01

Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films were fabricated using a chemical route to prepare the CZTS films, consisting in sequential deposition of Cu2SnS3 (CTS) and ZnS thin films followed by annealing at 550 °C in nitrogen atmosphere. The CTS compound was prepared in a one-step process using a novel chemical procedure consisting of simultaneous precipitation of Cu2S and SnS2 performed by diffusion membranes assisted CBD (chemical bath deposition) technique. Diffusion membranes were used to optimize the kinetic growth through a moderate control of release of metal ions into the work solution. As the conditions for the formation in one step of the Cu2SnS3 compound have not yet been reported in literature, special emphasis was put on finding the parameters that allow growing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S and SnS2. For that, we propose a methodology that includes numerical solution of the equilibrium equations that were established through a study of the chemical equilibrium of the system SnCl2, Na3C6H5O7·2H2O, CuCl2 and Na2S2O3·5H2O. The formation of thin films of CTS and CZTS free of secondary phases grown with a stoichiometry close to that corresponding to the Cu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements of X-ray diffraction (XRD) and Raman spectroscopy. Solar cell with an efficiency of 4.2%, short circuit current of 16.2 mA/cm2 and open-circuit voltage of 0.49 V was obtained.

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

NASA Astrophysics Data System (ADS)

Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

2016-12-01

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

Preparation, deformation, and failure of functional Al-Sn and Al-Sn-Pb nanocrystalline alloys

NASA Astrophysics Data System (ADS)

Noskova, N. I.; Vil'Danova, N. F.; Filippov, Yu. I.; Churbaev, R. V.; Pereturina, I. A.; Korshunov, L. G.; Korznikov, A. V.

2006-12-01

Changes in the structure, hardness, mechanical properties, and friction coefficient of Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb (wt %) alloys subjected to severe plastic deformation by equal-channel angular pressing (with a force of 40 tonne) and by shear at a pressure of 5 GPa have been studied. The transition into the nanocrystalline state was shown to occur at different degrees of plastic deformation. The hardness exhibits nonmonotonic variations, namely, first it increases and subsequently decreases. The friction coefficient of the Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys quenched from the melt was found to be 0.33; the friction coefficients of these alloys in the submicrocrystalline state (after equal-channel angular pressing) equal 0.24, 0.32, and 0.35, respectively. The effect of disintegration into nano-sized powders was found to occur in the Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys after severe plastic deformation to ɛ = 6.4 and subsequent short-time holding.

Soft-phonon dynamics of the thermoelectric β-SnSe at high temperatures

NASA Astrophysics Data System (ADS)

Chatterji, Tapan; Wdowik, Urszula D.; Jagło, Grzegorz; Rols, Stéphane; Wagner, Frank R.

2018-07-01

Results of inelastic neutron scattering experiments on SnSe single crystals at high temperatures along with theoretical studies based on the density functional theory are reported. Our experiments reveal significant softening of the transverse acoustic branch along the [ 0 , ξ , 0 ] direction in the low-temperature α-SnSe of Pbnm symmetry as temperature approaches Tc = 807 K from below. This process is followed by a condensation of the zone-boundary Y-phonon of the high-temperature β-SnSe with Cmcm symmetry at the onset of phase transition. The employed theoretical approach supports experimental observations and demonstrates that the phase change in SnSe is mediated by an unstable zone-boundary phonon with the Y2+ irreducible representation within the Cmcm symmetry space group of the high-temperature β-SnSe. The present work provides a detailed understanding of the soft-mode dynamics in SnSe and conclusively shows that the α ⇌ β structural transformation in this currently topical thermoelectric material is of displacive type.

K{sub 2}Mg{sub 5-x}Sn{sub 3} and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, pb) with two types of Mg-Sn/Pb frameworks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Xiao-Wu, E-mail: xwlei10@163.co

2011-04-15

K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb) have been synthesized by reacting the mixture of the corresponding pure elements at high temperature, and structurally characterized by single-crystal X-ray diffraction studies. K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) is isostructural with Ni{sub 7-x}SbQ{sub 2} (Q=Se, Te) series and features 2D corrugated [Mg{sub 5-x}Sn{sub 3}] layers that are separated by K{sup +} cations. The structure of K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb) is closely related to the Ho{sub 2}Rh{sub 12}As{sub 7} structural type and features 3D [Mg{sub 18}Tt{sub 11}] framework composed of 1D [Mg{sub 18}Tt{sub 11}] columns that aremore » interconnected via Mg-Tt bonds, forming 1D hexagonal tunnels occupied by the K+ cations. Electronic structure calculations indicate that Mg atoms can function as either electron donor or as a participator in the network along with Tt atoms. Magnetic property measurements and band structure calculations indicate that these compounds are metallic. -- Graphical abstract: Two new K-Mg-Tt phases, K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb), have been synthesized and structurally characterized. K{sub 2}Mg{sub 5-x}Sn{sub 3} is isostructural with Ni{sub 7-x}SbQ{sub 2} (Q=Se, Te) and features a 2D corrugated [Mg{sub 5}Sn{sub 3}] layer that is separated by K{sup +} cations, and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb) is closely related to the Ho{sub 2}Rh{sub 12}As{sub 7} structure type and features a 3D [Mg{sub 18}Tt{sub 11}] network with 1D hexagonal tunnels along the c-axis occupied by K{sup +} cations. Display Omitted Research highlights: Two new polar intermetallics, K{sub 2}Mg{sub 5-x}Sn{sub 3} (x=0.28) and K{sub 3}Mg{sub 18}Tt{sub 11} (Tt=Sn, Pb). Electronic structure calculations were performed by both TB-LMTO and EHTB methods. Mg atom can function as either electron donor or participator in the network.« less

Fast formation and growth of high-density Sn whiskers in Mg/Sn-based solder/Mg joints by ultrasonic-assisted soldering: Phenomena, mechanism and prevention.

PubMed

Li, M Y; Yang, H F; Zhang, Z H; Gu, J H; Yang, S H

2016-06-08

A universally applicable method for promoting the fast formation and growth of high-density Sn whiskers on solders was developed by fabricating Mg/Sn-based solder/Mg joints using ultrasonic-assisted soldering at 250 °C for 6 s and then subjected to thermal aging at 25 °C for 7 d. The results showed that the use of the ultrasonic-assisted soldering could produce the supersaturated dissolution of Mg in the liquid Sn and lead to the existence of two forms of Mg in Sn after solidification. Moreover, the formation and growth of the high-density whiskers were facilitated by the specific contributions of both of the Mg forms in the solid Sn. Specifically, interstitial Mg can provide the persistent driving force for Sn whisker growth, whereas the Mg2Sn phase can increase the formation probability of Sn whiskers. In addition, we presented that the formation and growth of Sn whiskers in the Sn-based solders can be significantly restricted by a small amount of Zn addition (≥3 wt.%), and the prevention mechanisms are attributed to the segregation of Zn atoms at grain or phase boundaries and the formation of the lamellar-type Zn-rich structures in the solder.

Fast formation and growth of high-density Sn whiskers in Mg/Sn-based solder/Mg joints by ultrasonic-assisted soldering: Phenomena, mechanism and prevention

PubMed Central

Li, M. Y.; Yang, H. F.; Zhang, Z. H.; Gu, J. H.; Yang, S. H.

2016-01-01

A universally applicable method for promoting the fast formation and growth of high-density Sn whiskers on solders was developed by fabricating Mg/Sn-based solder/Mg joints using ultrasonic-assisted soldering at 250 °C for 6 s and then subjected to thermal aging at 25 °C for 7 d. The results showed that the use of the ultrasonic-assisted soldering could produce the supersaturated dissolution of Mg in the liquid Sn and lead to the existence of two forms of Mg in Sn after solidification. Moreover, the formation and growth of the high-density whiskers were facilitated by the specific contributions of both of the Mg forms in the solid Sn. Specifically, interstitial Mg can provide the persistent driving force for Sn whisker growth, whereas the Mg2Sn phase can increase the formation probability of Sn whiskers. In addition, we presented that the formation and growth of Sn whiskers in the Sn-based solders can be significantly restricted by a small amount of Zn addition (≥3 wt.%), and the prevention mechanisms are attributed to the segregation of Zn atoms at grain or phase boundaries and the formation of the lamellar-type Zn-rich structures in the solder. PMID:27273421

Effect of various SnO2 pH on ZnO/SnO2-composite film via immersion technique

NASA Astrophysics Data System (ADS)

Malek, M. F.; Mohamed, R.; Mamat, M. H.; Ismail, A. S.; Yusoff, M. M.; Rusop, M.

2018-05-01

ZnO/SnO2-composite film has been synthesized via immersion technique with various pH of SnO2. The pH of SnO2 were varied between 4.5 and 6.5. The optical measurements of the samples were carried out using Varian Cary 5000 UV-Vis spectrophotometer within the range from 350 nm to 800 nm at room temperature in air with a data interval of 1 nm. On the other hand, the optical photoluminescence properties were measured by a photoluminescence spectrometer (PL, model: Horiba Jobin Yvon - 79 DU420A-OE-325) using a He-Cd laser as the excitation source at 325 nm. These highly oriented ZnO/SnO2-composite film are potential for the creation of functional materials, such as the sensors, solar cells and etc.

Giant Negative Electrocaloric Effect in (Pb,La)(Zr,Sn,Ti)O3 Antiferroelectrics Near Room Temperature.

PubMed

Zhuo, Fangping; Li, Qiang; Gao, Jinghan; Ji, Yongjie; Yan, Qingfeng; Zhang, Yiling; Wu, Hong-Hui; Xi, Xiao-Qing; Chu, Xiangcheng; Cao, Wenwu

2018-04-11

(Pb 0.97 La 0.02 )(Zr x Sn 0.94- x Ti 0.06 )O 3 (PLZST) antiferroelectric ceramics with x = 0.75-0.90 have been fabricated and found to be a novel electrocaloric material system with a giant negative electrocaloric effect (Δ T = -11.5 K) and a large electrocaloric strength (|Δ T/Δ E| = 0.105 K cm kV -1 ) near room temperature. Additionally, the PLZST antiferroelectric ceramic also exhibits a large positive electrocaloric effect around the Curie temperature. The giant negative effect and the coexistence of both positive and negative electrocaloric effects in one material indicate a promising possibility to develop mid- to large-scale solid-state cooling devices with high efficiency.

Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4

NASA Astrophysics Data System (ADS)

Teixeira, J. P.; Sousa, R. A.; Sousa, M. G.; da Cunha, A. F.; Fernandes, P. A.; Salomé, P. M. P.; Leitão, J. P.

2014-12-01

The theoretical models of radiative recombinations in both CuIn1 -xGaxSe2 chalcopyrite and Cu2ZnSnS4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu2ZnSnS4-based solar cells in which the absorber layer was grown through sulphurization of multiperiod structures of precursor layers. For both samples the luminescence is dominated by an asymmetric band with peak energy at ˜1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ˜60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of ˜280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed.

High-temperature solution growth and characterization of (1-x)PbTiO3-xBi(Zn2/3Nb1/3)O3 piezo-/ferroelectric single crystals

NASA Astrophysics Data System (ADS)

Paterson, Alisa R.; Zhao, Jinyan; Liu, Zenghui; Wu, Xiaoqing; Ren, Wei; Ye, Zuo-Guang

2018-03-01

Complex perovskite PbTiO3-Bi(Me‧Me″)O3 solid solutions represent new materials systems that possess a higher Curie temperature (TC) than the relaxor-PbTiO3 solid solutions, and are useful for potential applications. To this end, novel ferroelectric single crystals of the (1-x)PbTiO3-xBi(Zn2/3Nb1/3)O3 (PT-BZN) solid solution were successfully grown by the high-temperature solution growth (HTSG) method. Powder X-ray diffraction shows that the symmetry of the grown crystals is tetragonal. The dielectric permittivity and optical domain structures were characterized by dielectric measurements and polarized light microscopy, respectively, as a function of temperature, revealing a first-order ferroelectric-paraelectric phase transition at a TC of 436 ± 2 °C. Based on the TC, the average composition of the crystal platelet was estimated to be 0.58PT-0.42BZN. Piezoresponse force microscopy measurements of the phase and amplitude as a function of voltage reveal the complex polar domain structure and demonstrate the ferroelectric switching behaviour of these materials. These results suggest that the PT-BZN single crystals indeed form a new family of high TC piezo-/ferroelectric materials which are potentially useful for the fabrication of electromechanical transducers for high-temperature applications.

Long wavelength PbSnTe lasers with CW operation above 77 K

NASA Technical Reports Server (NTRS)

Shinohara, K.; Yoshikawa, M.; Ito, M.; Ueda, R.

1980-01-01

Lead tin telluride diode lasers with emission wavelengths of 6 to 9 micrometers easily operate continuously at temperatures above 77K. These lasers have the Pb(1-y) Sn(y) TE/Pb(1-y) Te/Pb(1-y) Sn(y) Te/PbTe (substrate), (x y) double heterostructure. To prepare this structure by LPE, the growth temperature must be below 600 C to suppress diffusion of the tin during the epitaxial growth. When the heterojunctions are formed by the usual LPE method, the junction boundaries become irregular in the case for the lasers with wavelengths of over 10 micrometers at 77K. The mechanism by which the heterojunction boundaries become irregular is cleared and a new LPE method which prevents the irregularity is explained. The lasers prepared from the wafers grown by the new method have demonstrated CW operation at wavelengths longer than 10 micrometers above liquid nitrogen temperature.

Surface tension and density of liquid In-Sn-Zn alloys

NASA Astrophysics Data System (ADS)

Pstruś, Janusz

2013-01-01

Using the dilatometric method, measurements of the density of liquid alloys of the ternary system In-Sn-Zn in four sections with a constant ratio Sn:In = 24:1, 3:1, 1:1, 1:3, for various Zn additions (5, 10, 14, 20, 3 5, 50 and 75 at.% Zn) were performed at the temperature ranges of 500-1150 K. Density decreases linearly for all compositions. The molar volume calculated from density data exhibits close to ideal dependence on composition. Measurements of the surface tension of liquid alloys have been conducted using the method of maximum pressure in the gas bubbles. There were observed linear dependences on temperature with a negative gradients dσ/dT. Generally, with two exceptions, there was observed the increase of surface tension with increasing content of zinc. Using the Butler's model, the surface tension isotherms were calculated for temperatures T = 673 and 1073 K. Calculations show that only for high temperatures and for low content of zinc (up to about 35 at.%), the modeling is in very good agreement with experiment. Using the mentioned model, the composition of the surface phase was defined at two temperatures T = 673 and 973 K. Regardless of the temperature and of the defined section, the composition of the bulk is very different in comparison with the composition of the surface.

Gas Sensing Properties of ZnO-SnO2 Nanostructures.

PubMed

Chen, Weigen; Li, Qianzhu; Xu, Lingna; Zeng, Wen

2015-02-01

One-dimensional (1D) semiconductor metal oxide nanostructures have attracted increasing attention in electrochemistry, optics, magnetic, and gas sensing fields for the good properties. N-type low dimensional semiconducting oxides such as SnO2 and ZnO have been known for the detection of inflammable or toxic gases. In this paper, we fabricated the ZnO-SnO2 and SnO2 nanoparticles by hydrothermal synthesis. Microstructure characterization was performed using X-ray diffraction (XRD) and surface morphologies for both the pristine and doped samples were observed using field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Then we made thin film gas sensor to study the gas sensing properties of ZnO-SnO2 and SnO2 gas sensor to H2 and CO. A systematic comparison study reveals an enhanced gas sensing performance for the sensor made of SnO2 and ZnO toward H2 and CO over that of the commonly applied undecorated SnO2 nanoparticles. The improved gas sensing properties are attributed to the size of grains and pronounced electron transfer between the compound nanostructures and the absorbed oxygen species as well as to the heterojunctions of the ZnO nanoparticles to the SnO2 nanoparticles, which provide additional reaction rooms. The results represent an advance of compound nanostructures in further enhancing the functionality of gas sensors, and this facile method could be applicable to many sensing materials, offering a new avenue and direction to detect gases of interest based on composite tin oxide nanoparticles.

Homologous compounds of type ARO3(ZnO)m in the system Ga-Sn-Zn-O

NASA Astrophysics Data System (ADS)

Eichhorn, Simon; Schmid, Herbert; Assenmacher, Wilfried; Mader, Werner

2017-02-01

Several members of hitherto unknown homologous compounds [Sn0.5Zn0.5]GaO3(ZnO)m (m=3-7) of the general formula ARO3(ZnO)m were prepared by solid state methods from the binary oxides in sealed Pt-tubes. UV-vis measurements confirm these compounds to be transparent oxides with an optical band gap in the UV region with Eg≈3 eV. Rietveld refinements on powder samples of [Sn0.5Zn0.5]GaO3(ZnO)m proved the compounds to be isostructural with InGaO3(ZnO)m, where In3+ on octahedral sites is replaced statistically by Sn4+ and Zn2+ in equal amounts preserving an average charge of 3+. Additionally, the structure of [Sn0.5Zn0.5]GaO3(ZnO)3 has been determined from flux-grown single crystals by X-ray diffraction (R 3 ̅ m , Z=3, a=3.2387(7) Å, c=41.78(1) Å, 19 parameters, 201 independent reflections, R1=0.047, wR2=0.074). The compound [Sn0.5Zn0.5]GaO3(ZnO)3 is isostructural with InGaO3(ZnO)3. [Sn0.5Zn0.5]GaO3(ZnO)3 was furthermore analyzed by High Angle Annular Dark Field (HAADF) scanning TEM and EELS spectroscopic imaging, supporting the structure model derived from X-ray diffraction data.

Selectivity shifting behavior of Pd nanoparticles loaded zinc stannate/zinc oxide (Zn2SnO4/ZnO) nanowires sensors

NASA Astrophysics Data System (ADS)

Arafat, M. M.; Ong, J. Y.; Haseeb, A. S. M. A.

2018-03-01

In this research, the gas sensing behavior of Pd nanoparticles loaded zinc stannate/zinc oxide (Zn2SnO4/ZnO) nanowires were investigated. The Zn2SnO4/ZnO nanowires were grown on Au interdigitated alumina substrate by carbon assisted thermal evaporation process. Pd nanoparticles were loaded on the Zn2SnO4/ZnO nanowires by wet reduction process. The nanowires were characterized by X-ray diffractometer, field emission scanning electron microscope and energy dispersive X-ray spectroscope. The Zn2SnO4/ZnO and Pd nanoparticles loaded Zn2SnO4/ZnO nanowires were investigated for detecting H2, H2S and C2H5OH gases in N2 background. Results revealed that the average diameter and length of as-grown Zn2SnO4/ZnO nanowires were 74 nm and 30 μm, respectively. During wet reduction process,Pd particles having size of 20-60 nm were evenly distributed on the Zn2SnO4/ZnO nanowires. The Zn2SnO4/ZnO nanowires based sensors showed selective response towards C2H5OH whereas Pd nanoparticles loaded Zn2SnO4/ZnO nanowires showed selective response towards H2. The recovery time of the sensors reduced with Pd loading on Zn2SnO4/ZnO nanowires. A mechanism is proposed to elucidate the gas sensing mechanism of Pd nanoparticles loaded Zn2SnO4/ZnO nanowires.

Formation and Stability of Pb-Sn Embedded Multiphase Alloy Nanoparticles via Mechanical Alloying

NASA Astrophysics Data System (ADS)

Khan, Patan Yousaf; Devi, M. Manolata; Biswas, Krishanu

2015-08-01

The present paper describes the preparation, characterization, and stability of Pb-Sn multiphase alloy nanoparticles embedded in Al matrix via mechanical alloying (MA). MA is a solid-state processing route, which can produce nanocrystalline phases by severely deforming the materials at high strain rate. Therefore, in order to understand the effect of the increasing interface as well as defects on the phase transformation behavior of Pb-Sn nanoparticles, Pb-Sn multiphase nanoparticles have been embedded in Al by MA. The nanoparticles have extensively been characterized using X-ray diffraction and transmission electron microscope. The characterization reveals the formation of biphasic as well as single-phase solid solution nanoparticles embedded in the matrix. The detailed microstructural and differential scanning calorimetry studies indicate that the formation of biphasic nanoparticles is due to size effect, mechanical attrition, and ballistic diffusion of Pb and Sn nanoparticles embedded in Al grains. Thermal characterization data reveal that the heating event consists of the melting peaks due to the multiphase nanoparticles and the peak positions shift to lower temperature with the increase in milling time. The role of interface structure is believed to play a prominent role in determining the phase stability of the nanoparticle. The results are discussed in the light of the existing literature.

Effect of Interfacial Microstructures on the Bonding Strength of Sn-3.0Ag-0.5Cu Pb-Free Solder Bump

NASA Astrophysics Data System (ADS)

Kim, Jae-Myeong; Jeong, Myeong-Hyeok; Yoo, Sehoon; Park, Young-Bae

2012-05-01

The effect of interfacial microstructures on the bonding strength of Sn-3.0Ag-0.5Cu Pb-free solder bumps with respect to the loading speed, annealing time, and surface finish was investigated. The shear strength increased and the ductility decreased with increasing shear speed, primarily because of the time-independent plastic hardening and time-dependent strain-rate sensitivity of the solder alloy. The shear strength and toughness decreased for all surface finishes under the high-speed shear test of 500 mm/s as a result of increasing intermetallic compound (IMC) growth and pad interface weakness associated with increased annealing time. The immersion Sn and organic solderability preservative (OSP) finishes showed lower shear strength compared to the electroless nickel immersion gold (ENIG) finish. With increasing annealing time, the ENIG finish exhibited the pad open fracture mode, whereas the immersion Sn and OSP finishes exhibited the brittle fracture mode. In addition, the shear strength of the solder joints was correlated with each fracture mode.

Zener behaviour of p-SnS/ZnO and p-SnS/ZnS heterojunctions

NASA Astrophysics Data System (ADS)

Gupta, Yashika; Arun, P.

2018-03-01

p-SnS absorbing layers were grown by thermal evaporation on layers of various Zinc compounds, like ZnO and ZnS. This present work reports the J-V characteristics of thus obtained p-SnS/ZnO and p-SnS/ZnS heterojunctions. The pn junctions of these structures did not show any photovoltaic activity, however a zener like behaviour was observed in the 3rd quadrant of the J-V characteristics. Our analysis of the diodes suggest that the reverse breakdown or zener voltage obtained from the dark J-V characteristics can be used to estimate the energy band diagram of the junction and in turn the band-alignment at the junction. This makes it an easy alternative to x-ray Photoelectron Spectroscopy method usually used.

Pb-free electronics: from nanotechnology to combinatorial materials science

NASA Astrophysics Data System (ADS)

Diaz Gonzalez, Alfredo J.

The elimination of lead (Pb) from the electronics industry due to a government directive caused problems on the manufacturing and use of electronic components. The current alloys used to attach components have a significant higher processing temperature (~30-40°C) that those containing Pb. The higher processing temperatures cause damage to the electronic components; printed circuit boards (PCB) and represents an increase in energetic costs for the manufacurer. Tin whiskers are out-of-plane structures that grow from tin (Sn) plated surfaces and cause short circuits and metal vapor arc. The electrical connection of components to the PCB relies on leads that are close to each other and are manufactured from tin-plated copper. Materials have shown a tendency to modify their bulk properties depending on powder particle size. Nanoparticle's coalescence temperature tends to decrease as particle size decreases. Exploiting this behavior, a nanoparticle based solder paste has been developed for attaching electronic components at a lower processing temperature to avoid thermally induced damage and reduce energy consumption. Tin nanoparticles were successfully synthesized via a wet chemistry route using tin (II) chloride dihydrated (metal precursor), 1,10-Phenanthroline (surfactant), and sodium borohydride (reducing agent). A flux system was developed based on Ethylene Glycol. Results showed acceptable coalescence of the non-capped nanoparticles at temperatures as low as 200°C with a processing time of 20 minutes. Synthesized nanoparticles with capping agent required higher flux content thus resulting in a poor metallic load paste. A reduction in processing temperature of approximately 40°C have been found when comparing the developed solder paste with typical SAC lead-free solders (~240°C). The electrical behavior was found to be an order of magnitude below that of bulk tin. Compositional libraries have been developed in an attempt to screen, via a high through-put method

Distribution and evolution of Zn, Cd, and Pb in Apollo 16 regolith samples and the average U-Pb ages of the parent rocks

NASA Technical Reports Server (NTRS)

Cirlin, E. H.; Housley, R. M.

1982-01-01

The concentration of surface (low temperature site) and interior (high temperature site) Cd, Zn, and Pb in 13 Apollo 16 highland fines samples, pristine rock 65325, and mare fines sample 75081 were analyzed directly from the thermal release profiles obtained by flameless atomic absorption technique (FLAA). Cd and Zn in pristine ferroan anothosite 65325, anorthositic grains of the most mature fines 65701, and basaltic rock fragments of mare fines 75081 were almost all surface Cd and Zn indicating that most volatiles were deposited on the surfaces of vugs, vesicles and microcracks during the initial cooling process. A considerable amount of interior Cd and Zn was observed in agglutinates. This result suggests that high temperature site interior volatiles originate from entrapment during the lunar maturation processes. Interior Cd found in the most mature fines sample 65701 was only about 15% of the total Cd in the sample. Interior Pb present in Apollo 16 fines samples went up to 60%. From our Cd studies we can assume that this interior Pb in highland fines samples is largely due to the radiogenic decay which occurred after the redistribution of the volatiles took place. We obtained an average age of 4.0 b.y. for the parent rocks of Apollo 16 highland regolith from our interior Pb analyses.

High temperature thermoelectric properties of rock-salt structure PbS

DOE PAGES

Parker, David S.; Singh, David J.

2013-12-18

We present an analysis of the high temperature transport properties of rock-salt structure PbS, a sister compound to the better studied lead chalcogenides PbSe and PbTe. In this study, we find thermopower magnitudes exceeding 200 V/K in a wide doping range for temperatures of 800 K and above. Based on these calculations, and an analysis of recent experimental work we find that this material has a potential for high thermoelectric performance. Also, we find favorable mechanical properties, based on an analysis of published data.

CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type In x Ga1- x N Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Chen, Wei-Liang; Kuo, Dong-Hau; Tuan, Thi Tran Anh

2017-03-01

Cu2ZnSnSe4 (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu-Zn-Sn metal target, followed by two-step post-selenization at 500-600°C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In0.15Ga0.85N/GaN/CZTSe and In0.15Ga0.85N/In0.3Ga0.7N/CZTSe. The p-type CZTSe and the n-type In x Ga1- x N films were characterized. The properties of CZTSe changed with the selenization temperature and the In x Ga1- x N with its indium content. With the CdS-free modeling for a solar cell structure, the In0.15Ga0.85N/In0.3Ga0.7N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. Current density of ˜48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves that sputtered III-nitride films have their merits.

Synthesis and characterization of ZnO/ZnSe NWs/PbS QDs solar cell

NASA Astrophysics Data System (ADS)

Kamruzzaman, M.; Zapien, J. A.

2017-04-01

The capture of solar energy has gained the attention for the next generation solar cell. ZnO/ZnSe NW arrays were synthesized on an FTO glass substrate using a simple and facile hydrothermal and ion-exchange approaches. The lead sulfide (PbS) QDs was infiltrated into ZnO/ZnSe NWs via SILAR method for making inorganic quantum dot sensitized ZnO/ZnSe/PbS QDs solar cell. The surface morphology, structural, optical, and J-V characteristics have been investigated. The ZnO/ZnSe NW is a core-shell like structure, and the absorption edge shifted from the UV region (ZnO NWs) to the near infrared region for ZnO/ZnSe NWs/PbS QDs. For PbS QDs-sensitized solar cell, the obtained value of η = 1.1%, J sc = 20.60 mA/cm2, V oc = 155 mV, and FF = 34.7%, respectively. The photovoltaic performance of the device in this study is still inferior. However, it is the first report regarding to ZnO/ZnZe NWs/PbS QDs solar cell. The achieving high absorption and large short circuit current density may interest in further improvement of the device performance by suppressing surface defects, optimizing the quality of ZnO/ZnSe NWs and PbS QDs.

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

PubMed Central

Parker, David; Singh, David J

2013-01-01

We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature. PMID:27877610

Synthesis and enhanced acetone gas-sensing performance of ZnSnO3/SnO2 hollow urchin nanostructures

NASA Astrophysics Data System (ADS)

Lian, Dandan; Shi, Bing; Dai, Rongrong; Jia, Xiaohua; Wu, Xiangyang

2017-12-01

A kind of novel ZnSnO3/SnO2 hollow urchin nanostructure was synthesized by a facile, eco-friendly two-step liquid-phase process. The structure, morphology, and composition of samples were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and nitrogen adsorption-desorption techniques. The results revealed that many tiny needle-like SnO2 nanowires with the average diameter of 5 nm uniformly grew on the surface of the ZnSnO3 hollow microspheres and the ZnSnO3/SnO2 hollow urchin nanostructures with different SnO2 content also were successfully prepared. In order to comprehend the evolution process of the ZnSnO3/SnO2 hollow urchin nanostructures, the possible growth mechanism of samples was illustrated via several experiments in different reaction conditions. Moreover, the gas-sensing performance of as-prepared samples was investigated. The results showed that ZnSnO3/SnO2 hollow urchin nanostructures with high response to various concentration levels of acetone enhanced selectivity, satisfying repeatability, and good long-term stability for acetone detection. Specially, the 10 wt% ZnSnO3/SnO2 hollow urchin nanostructure exhibited the best gas sensitivity (17.03 for 50 ppm acetone) may be a reliable biomarker for the diabetes patients, which could be ascribed to its large specific surface area, complete pore permeability, and increase of chemisorbed oxygen due to the doping of SnO2.

Microstructural Evolution and Tensile Properties of SnAgCu Mixed with Sn-Pb Solder Alloys (Preprint)

DTIC Science & Technology

2009-03-01

AFRL-RX-WP-TP-2009-4132 MICROSTRUCTURAL EVOLUTION AND TENSILE PROPERTIES OF SnAgCu MIXED WITH Sn-Pb SOLDER ALLOYS (PREPRINT...PROPERTIES OF SnAgCu MIXED WITH Sn-Pb SOLDER ALLOYS (PREPRINT) 5a. CONTRACT NUMBER FA8650-04-C-5704 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...ANSI Std. Z39-18 Microstructural evolution and tensile properties of SnAgCu mixed with Sn-Pb solder alloys Fengjiang Wang,1 Matthew O’Keefe,1,2 and

Superconducting properties of Pb-Sn-In alloys directionally solidified aboard Skylab

NASA Technical Reports Server (NTRS)

Anderson, W. T., Jr.; Reger, J. L.

1975-01-01

Superconducting alloys of Pb-Sn-In were directionally solidified in the absence of gravity-induced convection and segregation by processing in a near weightless condition aboard Skylab. Lead-rich and tin-rich lamellar structures were obtained with both high and low G/R (temperature gradient/solidification rate) samples processed at 0-g and at 1-g in a ground-based laboratory. Thinner, higher density lamellae were found with the 0-g specimens. Magnetization curves at 4.2 K showed hysteresis effects with large areas under the curves indicating magnetic flux pinning by the normal state tin-rich phase.

Stable low-bandgap Pb-Sn binary perovskites for tandem solar cells

DOE PAGES

Yang, Zhibin; Rajagopal, Adharsh; Chueh, Chu -Chen; ...

2016-08-22

A low-bandgap (1.33 eV) Sn-based MA 0.5FA 0.5Pb 0.75Sn 0.25I 3 perovskite is developed via combined compositional, process, and interfacial engineering. It can deliver a high power conversion efficiency (PCE) of 14.19%. Lastly, a four-terminal all-perovskite tandem solar cell is demonstrated by combining this low-bandgap cell with a semitransparent MAPbI 3 cell to achieve a high efficiency of 19.08%.

The effect of stoichiometry on Cu-Zn ordering kinetics in Cu2ZnSnS4 thin films

NASA Astrophysics Data System (ADS)

Rudisch, Katharina; Davydova, Alexandra; Platzer-Björkman, Charlotte; Scragg, Jonathan

2018-04-01

Cu-Zn disorder in Cu2ZnSnS4 (CZTS) may be responsible for the large open circuit voltage deficit in CZTS based solar cells. In this study, it was investigated how composition-dependent defect complexes influence the order-disorder transition. A combinatorial CZTS thin film sample was produced with a cation composition gradient across the sample area. The graded sample was exposed to various temperature treatments and the degree of order was analyzed with resonant Raman spectroscopy for various compositions ranging from E- and A-type to B-, F-, and C-type CZTS. We observe that the composition has no influence on the critical temperature of the order-disorder transition, but strongly affects the activation energy. Reduced activation energy is achieved with compositions with Cu/Sn > 2 or Cu/Sn < 1.8 suggesting an acceleration of the cation ordering in the presence of vacancies or interstitials. This is rationalized with reference to the effect of point defects on exchange mechanisms. The implications for reducing disorder in CZTS thin films are discussed in light of the new findings.

Surface tension modelling of liquid Cd-Sn-Zn alloys

NASA Astrophysics Data System (ADS)

Fima, Przemyslaw; Novakovic, Rada

2018-06-01

The thermodynamic model in conjunction with Butler equation and the geometric models were used for the surface tension calculation of Cd-Sn-Zn liquid alloys. Good agreement was found between the experimental data for limiting binaries and model calculations performed with Butler model. In the case of ternary alloys, the surface tension variation with Cd content is better reproduced in the case of alloys lying on vertical sections defined by high Sn to Zn molar fraction ratio. The calculated surface tension is in relatively good agreement with the available experimental data. In addition, the surface segregation of liquid ternary Cd-Sn-Zn and constituent binaries has also been calculated.

Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Debnam, W. J.; Rosch, W. R.; Baker, N. R.; Narayanan, R.

1999-01-01

The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USNP-3) in February, 1996 and on USNW- 4 in November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe, an alloy of PbTe and SnTe, are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (greater than 6 gm) infrared detectors and lasers. The properties and utilization of PbSnTe are the subject of other papers. 1,2 PbSnTe is also interesting from a purely scientific point of view. It is, potentially, both solutally and thermally unstable due to the temperature and density gradients present during growth. Density gradients, through thermal expansion, are imposed in directional solidification because temperature gradients are required to extract heat. Solutal gradients occur in directional solidification of alloys due to segregation at the interface. Usually the gradients vary with both experiment design and inherent materials properties. In a simplified one dimensional analysis with the growth axis parallel to the gravity vector, only one of the two instabilities work at a time. During growth, the temperature in the liquid increases ahead of the interface. Therefore the density, due to thermal expansion, is decreasing in that direction. However, the phase diagram shows that the lighter SnTe is preferentially rejected at the

Theoretical study of high temperature behavior of Pb and Pb-base alloy surfaces

NASA Astrophysics Data System (ADS)

Landa, Alexander Ilyich

1998-11-01

A recent study of a Pb-Bi-Ni alloy reported a strong co-segregation of Bi and Ni at the alloy surface. The nature of this surface phenomenon has been studied by means of modern ab initio and classical simulation techniques. It was useful to begin by a study of the underlying binaries. We have performed ab initio calculations of the segregation profiles at the (111), (100) and (110) surfaces of random Pbsb{95}Bisb{05} alloys by means of the coherent potential approximation within the context of a tight-binding linear muffin-tin-orbitals method. We have found the segregation profiles to be oscillatory (this effect is most pronounced for the (111) surface) with a strong preference for Bi to segregate to the first atom layer. We have performed Monte Carlo simulations, employing Finnis-Sinclair-type empirical many-body potentials and computed the solubility limits of Pb-Bi and Pb-Ni alloys, as well as the segregation profiles at the (111) surfaces of Pbsb{95}Bisb{05} and Pb-Ni alloys. For Pb-Bi alloys, the concentration profiles have also been found to be oscillatory. Calculations on Pb-Ni showed that within the solubility limit of Ni in Pb, Ni did not segregate to the Pb(111) outermost surface layer. In the ternary Pbsb{95}Bisb{05}{+}Ni alloy ab initio calculations detected a tendency for Ni to segregate to the subsurface from layer due its strong interaction with Bi. Calculations on Pb-Bi-Ni showed strong segregation of Ni to the subsurface atom layer, accompanied by co-segregation of Bi to several of the outermost atom layers. We have also focused our attention on the high temperature behavior of the pure Pb(110) metal surface. Molecular dynamics simulations incorporating a many-body potential have been used to investigate the atomic structure and dynamics of the Pb(110) surface in the range from room temperature up to the bulk melting point. The surface starts to disorder approximately at 360 K via the generation of vacancies and the formation of an adlayer. At

The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

NASA Astrophysics Data System (ADS)

Jang, Guh-Yaw; Duh, Jenq-Gong

2005-01-01

The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si3N4/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni1-x,Cux)3Sn4 intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni1-x,Cux)3Sn4 IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu1-y,Niy)6Sn5 IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu1-y,Niy)6Sn5 IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 1016-1017 atoms/cm2sec in both the eutectic Sn-Ag and Sn-Pb systems.

Ultrasonic-assisted soldering of fine-grained 7034 aluminum alloy using Sn-Zn solders below 300°C.

PubMed

Guo, Weibing; Luan, Tianmin; He, Jingshan; Yan, Jiuchun

2018-01-01

The fine-grained Al alloys prefer to be soldered at as low as temperature to keep their mechanical properties. Solders of Sn-4Zn, Sn-9Zn, and Sn-20Zn alloys were used to solder fine-grained 7034 Al alloy pieces by ultrasonic-assisted soldering below 300°C in air. The joint using Sn-4Zn solder had the highest tensile strength of 201MPa and the fractures occurred in both β-Sn and Sn-Zn eutectic phases. Such joint was much stronger than the 1060 Al joint using Sn-4Zn solder, and its strength had approached the strength of 7034 Al joint using Zn-5Al solder. The strength of the joints using Sn-9Zn and Sn-20Zn solders dropped to∼160MPa due to the appearance of weak interfaces between η-Zn and eutectic phases in the bond layers. All the joints using Sn-Zn solders had very strong interfacial bonding, and alumina interlayers were identified at all the interfaces. Al dissolved in the bond layer reacted with the O rapidly to form alumina interlayers at the interfaces under the ultrasonic action. Zn segregated at the interface and formed strong bonds with both the Al terminated surface of alumina and the bond layer, resulting in strong interfacial bonding between Sn-Zn solders and Al alloys. Copyright © 2017 Elsevier B.V. All rights reserved.

Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications

NASA Astrophysics Data System (ADS)

Mesa, F.; Leguizamon, A.; Dussan, A.; Gordillo, G.

2016-10-01

In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

Superionic conductor PbSnF4 in the inner channel of SWNT

NASA Astrophysics Data System (ADS)

Zakalyukin, Ruslan Mikhalovich; Levkevich, Ekaterina Alexandrovna; Kumskov, Andrey Sergeevich; Orekhov, Andrey Sergeevich

2018-04-01

The nanocomposite PbSnF4@SWNT was obtained by capillary technique for the first time. This nanocomposite was investigated using X-ray diffraction phase analysis (XRD), high-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDX). SWNT diameter is ˜2 nm. Lead tetrafluorostannate (PbSnF4) monoclinic modification (space group P2/n) was identified by XRD analysis. The periodicity of the crystal plane (201) along the tube axis is ˜3.2Å. The distortion of plane is 11° with respect to the nanotube axis. The model of PbSnF4 single crystal contains ˜168 atoms. The structure of 1D PbSnF4@SWNT nanocomposite and HREM image were modelled.

Synthesis and Behavior of Cetyltrimethyl Ammonium Bromide Stabilized Zn1+xSnO3+x (0 ≤ x ≤1) Nano-Crystallites

PubMed Central

Placke, Astrid; Kumar, Ashok; Priya, Shashank

2016-01-01

We report synthesis of cetyltrimethyl ammonium bromide (CTAB) stabilized Zn1+xSnO3+x (0 ≤ x ≤1) nano-crystallites by facile cost-effective wet chemistry route. The X-ray diffraction patterns of as-synthesized powders at the Zn/Sn ratio of 1 exhibited formation of ZnSn(OH)6. Increasing the Zn/Sn ratio further resulted in the precipitation of an additional phase corresponding to Zn(OH)2. The decomposition of these powders at 650°C for 3h led to the formation of the orthorhombic phase of ZnSnO3 and tetragonal SnO2-type phase of Zn2SnO4 at the Zn/Sn ratio of 1 and 2, respectively, with the formation of their mixed phases at intermediate compositions, i.e., at Zn/Sn ratio of 1.25, 1.50 and 1.75, respectively. The lattice parameters of orthorhombic and tetragonal phases were a ~ 3.6203 Å, b ~ 4.2646 Å and c ~ 12.8291Å (for ZnSnO3) and a = b ~ 5.0136 Å and c ~ 3.3055Å (for Zn2SnO4). The transmission electron micrographs revealed the formation of nano-crystallites with aspect ratio ~ 2; the length and thickness being 24, 13 nm (for ZnSnO3) and 47, 22 nm (for Zn2SnO4), respectively. The estimated direct bandgap values for the ZnSnO3 and Zn2SnO4 were found to be 4.21 eV and 4.12 eV, respectively. The ac conductivity values at room temperature (at 10 kHz) for the ZnSnO3 and Zn2SnO4 samples were 8.02 × 10−8 Ω-1 cm-1 and 6.77 × 10−8 Ω-1 cm-1, respectively. The relative permittivity was found to increase with increase in temperature, the room temperature values being 14.24 and 25.22 for the samples ZnSnO3 and Zn2SnO4, respectively. Both the samples, i.e., ZnSnO3 and Zn2SnO4, exhibited low values of loss tangent up to 300 K, the room temperature values being 0.89 and 0.72, respectively. A dye-sensitized solar cell has been fabricated using the optimized sample of zinc stannate photo-anode, i.e., Zn2SnO4. The cyclic voltammetry revealed oxidation and reduction around 0.40 V (current density ~ 11.1 mA/cm2) and 0.57 V (current density– 11.7 mA/cm2) for Zn2SnO4

ZnO nanoflower-based photoelectrochemical DNAzyme sensor for the detection of Pb2+.

PubMed

Zhang, Bintian; Lu, Lili; Hu, Qichang; Huang, Feng; Lin, Zhang

2014-06-15

Lead contamination is now widespread, and exposure to lead may cause adverse effects on human beings. In this study, a photoelectrochemical sensor based on flower-like ZnO nanostructures was developed for Pb(2+) detection, using a Pb(2+)-dependent DNAzyme as the recognition unit and a double-strand DNA intercalator, Ru(bpy)2(dppz)(2+) (bpy=2,2'-bipyridine, dppz=dipyrido[3,2-a:2',3'-c] phenazine) as the photoelectrochemical signal reporter. The ZnO nanoflower was fabricated on an indium tin oxide (ITO) electrode by the convenient hydrothermal decomposition method. The morphology and photoelectrochemical property of the ZnO nanoflowers were characterized by SEM, XRD and photocurrent measurements. DNAzyme-substrate duplex was assembled on an ITO/ZnO electrode through electrostatic adsorption. In the presence of Pb(2+), RNA-cleavage activity of the DNAzyme was activated and its substrate strand was cleaved, resulting in the release of Ru(bpy)2(dppz)(2+) from the DNA film and the concomitant photocurrent decrease. The detection principle was verified by fluorescence measurements. Under the optimized conditions, a linear relationship between photocurrent and Pb(2+) concentration was obtained over the range of 0.5-20 nM, with a detection limit of 0.1 nM. Interference from other common metal ions was found negligible. Applicability of the sensor was demonstrated by analyzing lead level in human serum and Pb(2+) spiked water samples. This facile and economical sensor system showed high sensitivity and selectivity, thus can be potentially applied for on-site monitoring of lead contaminant. Copyright © 2014 Elsevier B.V. All rights reserved.

The crystal structures of Ni{sub 3+x}Sn{sub 4}Zn and Ni{sub 6+x}Sn{sub 8}Zn and their structural relations to Ni{sub 3+x}Sn{sub 4}, NiSn and Ni{sub 5−δ}ZnSn{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmetterer, Clemens, E-mail: clemens.schmetterer@univie.ac.at; Effenberger, Herta Silvia; Rajamohan, Divakar

2016-06-15

The crystal structures of two new compounds were determined from single-crystal X-ray diffraction measurements: Ni{sub 3+x}Sn{sub 4}Zn, (x~1.35, a=7.110(2) Å, b=4.123(1) Å, c=10.346(3) Å, β=90.23(2)°, space group I2/m, Z=2. R1=0.025, wR2=0.059 for 748 unique reflections, 35 variable parameters) and Ni{sub 6+x}Sn{sub 8}Zn, x~1.35 (a=12.379(3) Å, b=4.095(1) Å, c=12.155(3) Å, β=116.25(3)°, space group C2/m, Z=2. R1=0.026, wR2=0.052 for 1346 unique reflections, 60 variable parameters). In addition, a structural refinement was performed for Ni{sub 3+x}Sn{sub 4}, x~0.13 (a=12.264(3) Å, b=4.066(1) Å, c=5.223(2) Å, β=104.85(3)°, space group C2/m, Z=2. R1=0.019, wR2=0.046 for 617 unique reflections, 29 variable parameters). The three compounds show pronouncedmore » similarities among each other as well as to the crystal structures of surrounding binary Ni–Sn and ternary Ni–Sn–Zn compounds. In particular, the two new compounds form a homologous series with Ni{sub 3+x}Sn{sub 4}, x~0.13. They contain “Ni{sub 4}Sn{sub 4}” and “Ni{sub 2}Sn{sub 4}” building blocks which by different interconnection build up the distinct structures. Topological relations with NiSn and Ni{sub 5−δ}Sn{sub 4}Zn, δ~0.25 are evident. - Graphical abstract: Projection of the structure of Ni{sub 6+x}ZnSn{sub 8}, x~1.35 and constituent building blocks. Display Omitted - Highlights: • The crystal structures of Ni{sub 6+x}Sn{sub 8}Zn and Ni{sub 3+x}Sn{sub 4}Zn were determined using single crystal XRD. • Topological relations to Ni–Sn and Ni–Sn–Zn compounds were established and discussed. • Common structural units were identified and their interconnection patterns described.« less

Contrasting the material chemistry of Cu 2ZnSnSe 4 and Cu 2ZnSnS (4-x)Se x

DOE PAGES

Aguiar, Jeffery A.; Patel, Maulik; Aoki, Toshihiro; ...

2016-02-02

Earth-abundant sustainable inorganic thin-film solar cells, independent of precious elements, pivot on a marginal material phase space targeting specific compounds. Advanced materials characterization efforts are necessary to expose the roles of microstructure, chemistry, and interfaces. Here, the earth-abundant solar cell device, Cu 2ZnSnS (4-x)Se x, is reported, which shows a high abundance of secondary phases compared to similarly grown Cu 2ZnSnSe 4.

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

NASA Astrophysics Data System (ADS)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

NASA Astrophysics Data System (ADS)

Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

2018-04-01

The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

Utilization of Pb-free solders in MEMS packaging

NASA Astrophysics Data System (ADS)

Selvaduray, Guna S.

2003-01-01

Soldering of components within a package plays an important role in providing electrical interconnection, mechanical integrity and thermal dissipation. MEMS packages present challenges that are more complex than microelectronic packages because they are far more sensitive to shock and vibration and also require precision alignment. Soldering is used at two major levels within a MEMS package: at the die attach level and at the component attach level. Emerging environmental regulations worldwide, notably in Europe and Japan, have targeted the elimination of Pb usage in electronic assemblies, due to the inherent toxicity of Pb. This has provided the driving force for development and deployment of Pb-free solder alloys. A relatively large number of Pb-free solder alloys have been proposed by various researchers and companies. Some of these alloys have also been patented. After several years of research, the solder alloy system that has emerged is based on Sn as a major component. The electronics industry has identified different compositions for different specific uses, such as wave soldering, surface mount reflow, etc. The factors that affect choice of an appropriate Pb-free solder can be divided into two major categories, those related to manufacturing, and those related to long term reliability and performance.

ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

PubMed

Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

2017-04-25

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn 2 SnO 4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10 4 ), specific detectivity (up to 9.0 × 10 17 Jones), photoconductive gain (up to 1.1 × 10 7 ), fast response, and excellent stability. Compared with a pristine Zn 2 SnO 4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn 2 SnO 4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn 2 SnO 4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

Synthesis and characterization of (Sn,Zn)O alloys

DOE PAGES

Bikowski, Andre; Holder, Aaron; Peng, Haowei; ...

2016-09-29

SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group-II oxides such as ZnO. Here, we synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn 0 via Sn 2+ to Sn 4+, which can be counteracted by reducing the oxygen partial pressuremore » during the deposition. The optical characterization of the smooth <10 at. % Sn 1-xZn xO thin films showed an increase in the absorption coefficient in the range from 1 to 2 eV, which is consistent with the theoretical predictions for the isovalent alloying. However, the experimentally observed alloying effect may be convoluted with the effect of local variations of the Sn oxidation state. As a result, this effect would have to be minimized to improve the (Sn,Zn)O optical and electrical properties for their use as absorbers in solar energy conversion applications.« less

Highly efficient and mild electrochemical mineralization of long-chain perfluorocarboxylic acids (C9-C10) by Ti/SnO2-Sb-Ce, Ti/SnO2-Sb/Ce-PbO2, and Ti/BDD electrodes.

PubMed

Lin, Hui; Niu, Junfeng; Xu, Jiale; Huang, Haiou; Li, Duo; Yue, Zhihan; Feng, Chenghong

2013-11-19

The electrochemical mineralization of environmentally persistent long-chain perfluorinated carboxylic acids (PFCAs), i.e., perfluorononanoic acid (C8F17COOH, PFNA) and perfluorodecanoic acid (C9F19COOH, PFDA) was investigated in aqueous solutions (0.25 mmol L(-1)) over Ti/SnO2-Sb-Ce (SnO2), Ti/SnO2-Sb/Ce-PbO2 (PbO2), and Ti/BDD (BDD) anodes under galvanostatic control at room temperature. Based on PFCA decay rate, total organic carbon (TOC) reduction, defluorination ratio, safety, and energy consumption, the performance of PbO2 electrode was comparable with that of BDD electrode. After 180 min electrolysis, the PFNA removals on BDD and PbO2 electrodes were 98.7 ± 0.4% and 97.1 ± 1.0%, respectively, while the corresponding PFDA removals were 96.0 ± 1.4% and 92.2 ± 1.9%. SnO2 electrode yielded lower PFCA removals and led to notable secondary pollution by Sb ions. The primary mineralization product, F(-), as well as trace amounts of intermediate PFCAs with shortened chain lengths, were detected in aqueous solution after electrolysis. On the basis of these results, a degradation mechanism including three potential routes is proposed: via formation of short-chain PFCAs by stepwise removal of CF2; direct mineralization to CO2 and HF; conversion to volatile fluorinated organic compounds. The results presented here demonstrate that electrochemical technique exhibits high efficiency in mineralizing PFNA and PFDA under mild conditions, and is promising for the treatment of long-chain PFCAs in wastewater.

Fabrication of selective chemical sensor with ternary ZnO/SnO2/Yb2O3 nanoparticles.

PubMed

Rahman, Mohammed M; Alam, M M; Asiri, Abdullah M; Islam, M A

2017-08-01

Construction of highly efficient toxic chemical sensors is the key approach for the determination of carcinogenic chemicals in the environment and ecosystem. We report here, an efficient acetone chemical sensor based on the analytical performances such as sensitivity, lower-detection limit, reproducibility, and good linearity. The proposed acetone-detecting electrode was introduced by the implementation of ZnO/SnO 2 /Yb 2 O 3 nanoparticles (NPs) as a successful electron mediator with glassy carbon electrode (GCE) assembly. The prepared NPs of ZnO/SnO 2 /Yb 2 O 3 were well crystalline-doped nanomaterial and produced by implementation of hydrothermal procedure at low temperature. The conventional methods such as Fourier-transform infrared spectroscopy (FTIR), ultraviolet visible spectroscopy (UV/vis), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and powder x-ray diffraction (XRD) were utilized for characterization of prepared NPs in terms of morphological, elemental, optical and structural properties. The large linear dynamic range (LDR) of 0.34nmolL -1 to 3.4mmolL -1 with lower detection limit (S/N=3) of 0.05±0.002nmolL -1 and a higher sensitivity of 17.09µAmmolL -1 cm -2 were exhibited by lab-made fabricated sensor based on ZnO/SnO 2 /Yb 2 O 3 NPs for selective acetone detection. In shortly, the ZnO/SnO 2 /Yb 2 O 3 NPs are utilized as an excellent electron mediator with Nafion/GCE assembly in a chemical sensor for acetone detection even at the very low concentration. Therefore, the chemical sensor is fabricated with ZnO/SnO 2 /Yb 2 O 3 NPs may be a promising highly sensitive sensor by reliable I-V detection method for the effective detection of hazardous and carcinogenic chemicals in medical as well as health-care fields. Copyright © 2017 Elsevier B.V. All rights reserved.

Device simulation of lead-free CH3NH3SnI3 perovskite solar cells with high efficiency

NASA Astrophysics Data System (ADS)

Du, Hui-Jing; Wang, Wei-Chao; Zhu, Jian-Zhuo

2016-10-01

The lead-free perovskite solar cells (PSCs) have drawn a great deal of research interest due to the Pb toxicity of the lead halide perovskite. CH3NH3SnI3 is a viable alternative to CH3NH3PbX3, because it has a narrower band gap of 1.3 eV and a wider visible absorption spectrum than the lead halide perovskite. The progress of fabricating tin iodide PSCs with good stability has stimulated the studies of these CH3NH3SnI3 based cells greatly. In the paper, we study the influences of various parameters on the solar cell performance through theoretical analysis and device simulation. It is found in the simulation that the solar cell performance can be improved to some extent by adjusting the doping concentration of the perovskite absorption layer and the electron affinity of the buffer and HTM, while the reduction of the defect density of the perovskite absorption layer significantly improves the cell performance. By further optimizing the parameters of the doping concentration (1.3× 1016 cm-3) and the defect density (1× 1015 cm-3) of perovskite absorption layer, and the electron affinity of buffer (4.0 eV) and HTM (2.6 eV), we finally obtain some encouraging results of the J sc of 31.59 mA/cm2, V oc of 0.92 V, FF of 79.99%, and PCE of 23.36%. The results show that the lead-free CH3NH3SnI3 PSC is a potential environmentally friendly solar cell with high efficiency. Improving the Sn2 + stability and reducing the defect density of CH3NH3SnI3 are key issues for the future research, which can be solved by improving the fabrication and encapsulation process of the cell. Project supported by the Graduate Student Education Teaching Reform Project, China (Grant No. JG201512) and the Young Teachers Research Project of Yanshan University, China (Grant No. 13LGB028).

Densities of Pb-Sn alloys during solidification

NASA Technical Reports Server (NTRS)

Poirier, D. R.

1988-01-01

Data for the densities and expansion coefficients of solid and liquid alloys of the Pb-Sn system are consolidated in this paper. More importantly, the data are analyzed with the purpose of expressing either the density of the solid or of the liquid as a function of its composition and temperature. In particular, the densities of the solid and of the liquid during dendritic solidification are derived. Finally, the solutal and thermal coefficients of volume expansion for the liquid are given as functions of temperature and composition.

Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction

NASA Astrophysics Data System (ADS)

Minamizawa, Yuto; Kitazawa, Tomohiro; Hidaka, Shiro; Toyota, Hideyuki; Nakamura, Shin-ichi; Uchitomi, Naotaka

2018-04-01

The conduction type in (Zn,Sn,Mn)As2 thin films grown by molecular beam epitaxy (MBE) on InP substrates was found to be controllable from p-type to n-type as a function of Mn content. n-type (Zn,Sn,Mn)As2 thin films were obtained by Mn doping of more than approximately 11 cat.%. It is likely that Mn interstitials (MnI) incorporated by excess Mn doping are located at tetrahedral hollow spaces surrounded by Zn and Sn cation atoms and four As atoms, which are expected to act as donors in (Zn,Sn,Mn)As2, resulting in n-type conduction. The effect of annealing on the structural, electrical and magnetic properties of n-type (Zn,Sn,Mn)As2 thin films was investigated as functions of annealing temperature and time. It was revealed that even if the annealing temperature is considerably higher than the growth temperature of 320 °C, the magnetic properties of the thin films remain stable. This suggests that a MnI complex surrounded by Zn and Sn atoms is thermally stable during high-temperature annealing. The n-type (Zn,Sn,Mn)As2 thin films may be suitable for application as n-type spin-polarized injectors.

Characterization of Cu2ZnSnS4 thin films prepared by photo-chemical deposition

NASA Astrophysics Data System (ADS)

Moriya, Katsuhiko; Watabe, Jyunichi; Tanaka, Kunihiko; Uchiki, Hisao

2006-09-01

Cu2ZnSnS4 (CZTS) thin films were prepared by post-annealing films of metal sulfides of Cu2S, ZnS and SnS2 precursors deposited on soda-lime glass substrates by photo-chemical deposition (PCD) from aqueous solution containing CuSO4, ZnSO4, SnSO4 and Na2S2O3. In this study, sulfurization was employed to prepare high quality CZTS thin films. Deposited films of metal sulfides were annealed in a furnace in an atmosphere of N2 or N2+H2S(5%) at the temperature of 300°, 400° or 500 °C. The sulfured films showed X-ray diffraction peaks from (112), (220), and (312) planes of CZTS and the peaks became sharp by an increase in the sulfurization temperature. CZTS thin film annealed in atmosphere of N2 was S-poor. After annealing atmosphere was changed from N2 into N2+H2S(5%), the decrease of a composi- tional ratio of sulfur could be suppressed.

Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

NASA Astrophysics Data System (ADS)

Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

2018-03-01

Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

Growth and characterization of PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers on Si (100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachar, H.K.; Chao, I.; Fang, X.M.

1998-12-31

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si(100) using a MBE-grown PbSe/BaF{sub 2}/CaF{sub 2} buffer layer structure. Pb{sub 1{minus}x}Sn{sub x}Se layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si(100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electronmore » microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb{sub 1{minus}x}Sn{sub x}Se layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF{sub 2} buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.« less

Preparation of Cu{sub 2}ZnSnSe{sub 4} solar cells by low-temperature co-evaporation and following selenization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Chao, E-mail: chao.gao@kit.edu; Hetterich, Michael; Schnabel, Thomas

2016-01-04

Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films are prepared by a two-step method which involves co-evaporation of Cu, Zn, Sn, and Se on molybdenum-coated soda-lime glass at low substrate temperature and a following selenization. Solar cells with efficiencies of up to 6.5% can be achieved. The influence of the selenium deposition rates during co-evaporation and the nitrogen pressure during selenization on the properties of the CZTSe films are investigated. It is found that these two parameters can significantly affect the morphology and crystallinity of the CZTSe films. The possible reasons for the experimental results are discussed.

Obtaining phase-pure CZTS thin films by annealing vacuum evaporated CuS/SnS/ZnS stack

NASA Astrophysics Data System (ADS)

Sánchez, T. G.; Mathew, X.; Mathews, N. R.

2016-07-01

Cu2ZnSnS4 (CZTS) thin films were obtained by the sequential thermal evaporation of metal binary sulfides in the order CuS/SnS/ZnS, followed by annealing in Ar/S atmosphere. The as-grown films were annealed at different temperatures ranging between 350 and 600 °C, for 10 min. Based on the preliminary results, the temperatures 550 °C and 600 °C were selected for further optimization and a second batch of films were annealed for different time durations (10 min, 30 min and 60 min) at these temperatures in order to identify the conditions to obtain phase-pure CZTS films. The structural properties and chemical compositions at each temperature were investigated in order to optimize the phase purity and film stoichiometry. We have identified adequate and reproducible conditions to obtain the elemental ratio Cu/(Zn+Sn) and Zn/Sn close to 0.78 and 1.19 respectively, which is in the range of material composition required for promising solar cells. In addition the optimized material showed excellent optical and electrical properties to be used as a photovoltaic absorber layer. The optical band gap was found to be about 1.52 eV, and the carrier concentration, hall mobility, and resistivity were in the range of 8.372×1015 cm-3, 3.103 cm2/Vs and 340.3 Ω-cm respectively. Three traps with activation energies 4.39, 8.1, and 34 meV were detected.

Removal Efficiency of the Heavy Metals Zn(II), Pb(II) and Cd(II) by Saprolegnia delica and Trichoderma viride at Different pH Values and Temperature Degrees

PubMed Central

Hashem, Mohamed

2007-01-01

The removal efficiency of the heavy metals Zn, Pb and Cd by the zoosporic fungal species Saprolegnia delica and the terrestrial fungus Trichoderma viride, isolated from polluted water drainages in the Delta of Nile in Egypt, as affected by various ranges of pH values and different temperature degrees,was extensively investigated. The maximum removal efficiency of S. delica for Zn(II) and Cd(II) was obtained at pH 8 and for Pb(II) was at pH 6 whilst the removal efficiency of T. viride was found to be optimum at pH 6 for the three applied heavy metals. Regardless the median lethal doses of the three heavy metals, Zn recorded the highest bioaccumulation potency by S. delica at all pH values except at pH 4, followed by Pb whereas Cd showed the lowest removal potency by the fungal species and vice versa in case of T. viride. The optimum biomass dry weight production by S. delica was found when the fungus was grown in the medium treated with the heavy metal Pb at pH 6, followed by Zn at pH 8 and Cd at pH 8. The optimum biomass dry weight yield by T. viride amended with Zn,Pb and Cd was obtained at pH 6 for the three heavy metals with the maximum value at Zn. The highest yield of biomass dry weight was found when T. viride treated with Cd at all different pH values followed by Pb whilst Zn output was the lowest and this result was reversed in case of S. delica. The maximum removal efficiency and the biomass dry weight production for the three tested heavy metals was obtained at the incubation temperature 20℃ in case of S. delica while it was 25℃ for T. viride. Incubation of T. viride at higher temperatures (30℃ and 35℃) enhanced the removal efficiency of Pb and Cd than low temperatures (15℃ and 20℃) and vice versa in case of Zn removal. At all tested incubation temperatures, the maximum yield of biomass dry weight was attained at Zn treatment by the two tested fungal species. The bioaccumulation potency of S. delica for Zn was higher than that for Pb at all

Atomic Layer Deposition of Electron Selective SnOx and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance.

PubMed

Hultqvist, Adam; Aitola, Kerttu; Sveinbjörnsson, Kári; Saki, Zahra; Larsson, Fredrik; Törndahl, Tobias; Johansson, Erik; Boschloo, Gerrit; Edoff, Marika

2017-09-06

The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH 2 ) 2 , CH 3 NH 3 )Pb(I,Br) 3 (FAPbI 3 :MAPbBr 3 ) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnO x . Exposing the samples to the heat, the vacuum, and even the counter reactant of H 2 O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C 2 H 5 ) 2 either by itself or in combination with H 2 O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI 2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH 3 ) 2 ) 4 does not seem to degrade the bulk of the perovskite film, and conformal SnO x films can successfully be grown on top of it using atomic layer deposition. Using this SnO x film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C 70 -butyric acid methyl ester. However, the devices with SnO x show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnO x films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnO x interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnO x growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.

Microstructural analysis and thermoelectric properties of Sn-Al co-doped ZnO ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoemke, Joshua, E-mail: jhoemke@sigma.t.u-tokyo.ac.jp; Tochigi, Eita; Shibata, Naoya

2016-08-26

Sn-Al co-doped polycrystalline ZnO ceramics were prepared by sintering in air. Phase and microstructure analysis was performed by X-ray diffraction and SEM-EDS and thermoelectric properties were measured. XRD analysis showed a ZnO primary phase as well as secondary phase peaks due to the formation of a Zn{sub 2}SnO{sub 4} spinel phase or SnO{sub 2}(ZnO:Sn-Al){sub m} intergrowth phase. SEM analysis revealed a dense microstructure with a small number of nanometric pores, consistent with the measured density of 5.48 g/cm{sup 3}. An activated electrical conductivity characteristic of a semiconducting material was observed as well as a negative Seebeck coefficient with both valuesmore » increasing in absolute value from RT to 730 °C. The power factor had a maximum value of 3.73×10{sup −4} W m{sup −1} K{sup −2} at 730 °C. Thermal conductivity measurements showed a significant reduction over the measured temperature range compared to undoped ZnO. This could be attributed to grain size reduction, the formation of a nanoscale secondary phase or a reduction in crystallinity caused by Sn-Al co-doping. A maximum ZT of 0.06 was obtained at 750 °C for the Sn-Al co-doped ZnO ceramics.« less

Investigation of physical and mechanical properties of (BaSnO3)x(Bi,Pb)-2223 composite

NASA Astrophysics Data System (ADS)

Habanjar, K.; Barakat, M. M. E.; Awad, R.

2017-07-01

The effect of BaSnO3 nanoparticles addition on the structural and mechanical properties of (Bi,Pb)-2223 superconducting phase by means of X-rays diffraction analysis (XRD), scanning electron microscope (SEM), electrical resistance and Vickers microhardness measurement was studied. BaSnO3 nanomaterial and (BaSnO3)x(Bi,Pb)-2223 superconducting samples were prepared using co-precipitation method and standard solid-state reaction techniques, respectively. From XRD data, the addition of BaSnO3 into (Bi,Pb)-2223 phase does not affect the tetragonal structure and the lattice parameters. SEM images indicate that the microstructure of (Bi,Pb)-2223 was enhanced by adding BaSnO3 nanoparticles by filling its pores and voids. The superconducting transition temperature Tc as well as the critical transport current density Jc, estimated from electrical resistivity measurements, are increased up to x = 0.5 wt%, then decreased with further increase in x. Vickers microhardness measurements Hv were carried out at room temperature as a function of applied. The experimental Hv results were analysed in view of Meyer’s law, Hays and Kendall (HK) approach, elastic/plastic deformation (EPD) and proportional specimen resistance (PSR). All samples exhibit normal indentation size effect (ISE), in addition to that, the analysis shows that the Hays and Kendall model is the most suitable one to describe the load independent microhardness for (BaSnO3)x(Bi,Pb)-2223 superconducting samples.

Removal of Pb(II), Cd(II), Cu(II), and Zn(II) by hematite nanoparticles: effect of sorbent concentration, pH, temperature, and exhaustion.

PubMed

Shipley, Heather J; Engates, Karen E; Grover, Valerie A

2013-03-01

Nanoparticles offer the potential to improve environmental treatment technologies due to their unique properties. Adsorption of metal ions (Pb(II), Cd(II), Cu(II), Zn(II)) to nanohematite was examined as a function of sorbent concentration, pH, temperature, and exhaustion. Adsorption experiments were conducted with 0.05, 0.1, and 0.5 g/L nanoparticles in a pH 8 solution and in spiked San Antonio tap water. The adsorption data showed the ability of nanohematite to remove Pb, Cd, Cu, and Zn species from solution with adsorption increasing as the nanoparticle concentration increased. At 0.5 g/L nanohematite, 100 % Pb species adsorbed, 94 % Cd species adsorbed, 89 % Cu species adsorbed and 100 % Zn species adsorbed. Adsorption kinetics for all metals tested was described by a pseudo second-order rate equation with lead having the fastest rate of adsorption. The effect of temperature on adsorption showed that Pb(II), Cu(II), and Cd(II) underwent an endothermic reaction, while Zn(II) underwent an exothermic reaction. The nanoparticles were able to simultaneously remove multiple metals species (Zn, Cd, Pb, and Cu) from both a pH 8 solution and spiked San Antonio tap water. Exhaustion experiments showed that at pH 8, exhaustion did not occur for the nanoparticles but adsorption does decrease for Cd, Cu, and Zn species but not Pb species. The strong adsorption coupled with the ability to simultaneously remove multiple metal ions offers a potential remediation method for the removal of metals from water.

Enhanced thermoelectric performance of Pb doped Cu2SnSe3 synthesized employing spark plasma sintering

NASA Astrophysics Data System (ADS)

Shyam Prasad, K.; Rao, Ashok; Tyagi, Kriti; Singh Chauhan, Nagendra; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay

2017-05-01

We report an enhancement in the thermoelectric performance of Cu2SnSe3 alloy on Pb doping, owing to a sharp increase in its power factor. The powder XRD pattern of all samples of Cu2Sn1-xPbxSe3 (0≤x≤0.03), prepared using solid state reaction, exhibited a cubic structure with a space group of F 4 ̅ 3 m . The results show that temperature dependent electrical resistivity, ρ(T) increases with increasing temperature thereby demonstrating that the samples display heavily doped semiconducting nature, which could be satisfactorily described by small polaron hopping model in the whole temperature range of measurement for all the samples. Both the resistivity and the Seebeck coefficient are reduced with 2 vol% Pb doping. The thermal conductivity of all the samples reduces with increasing temperature. Despite a decrease in Seebeck coefficient the power factor shows an increase on Pb doping, owing to a sharp surge in the electrical conductivity which results in an enhanced ZTmax 0.64 at 700 K for an optimized composition of Cu2Sn0.98Pb0.02Se3, which is nearly twice the value of the corresponding undoped counterpart.

A detailed study on Sn4+ doped ZnO for enhanced photocatalytic degradation

NASA Astrophysics Data System (ADS)

Beura, Rosalin; Pachaiappan, R.; Thangadurai, P.

2018-03-01

The samples of Sn4+ doped (1, 5, 10, 15, 20 & 30%) ZnO nanostructures were synthesized by a low temperature hydrothermal method. Structural analysis by XRD and Raman spectroscopy showed the hexagonal wurtzite phase of ZnO and the formation of a secondary phase Zn2SnO4 beyond 10% doping of Sn4+. Microstructural analysis by TEM also confirmed the wurtzite ZnO with rod as well as particle like structure. Presence of various functional groups (sbnd OH, sbnd CH, Znsbnd O) were confirmed by FTIR. Optical properties were studied by UV-vis absorption, photoluminescence emission spectroscopies and lifetime measurement. Band gap of the undoped and Sn4+ doped ZnO were analyzed by Tauc plot and it was observed that the band gap of the materials had slightly decreased from 3.2 to 3.16 eV and again increased to 3.23 eV with respect to the increase in the doping concentration from 1 to 30%. A significant change was also noticed in the photoluminescence emission properties of ZnO i.e. increase in the intensity of NBE emission and decrease in DLE, on subject to Sn4+ doping. Average PL lifetime had increased from 29.45 ns for ZnO to 30.62 ns upon 1% Sn ion doping in ZnO. Electrical properties studied by solid state impedance spectroscopy showed that the conductivity had increased by one order of magnitude (from 7.48×10-8 to 2.21×10-7 S/cm) on Sn4+ doping. Photocatalytic experiments were performed on methyl orange (MO) as a model industrial dye under UV light irradiation for different irradiation times. The optimum Sn4+ content in order to achieve highest photocatalytic activity was found to be 1% Sn 4+ doping. The enhancement was achieved due to a decrease in the band gap favoring the generation of electron-hole pairs and the enhanced PL life time that delays the recombination of these charge carrier formation. The third reason was that the increased electrical conductivity that indicated the faster charge transfer in this material to enhance the photocatalytic activity. The Sn

Chemical behavior of Cu, Zn, Cd, and Pb in a eutrophic reservoir: speciation and complexation capacity.

PubMed

Tonietto, Alessandra Emanuele; Lombardi, Ana Teresa; Choueri, Rodrigo Brasil; Vieira, Armando Augusto Henriques

2015-10-01

This research aimed at evaluating cadmium (Cd), copper (Cu), lead (Pb), and zinc (Zn) speciation in water samples as well as determining water quality parameters (alkalinity, chlorophyll a, chloride, conductivity, dissolved organic carbon, dissolved oxygen, inorganic carbon, nitrate, pH, total suspended solids, and water temperature) in a eutrophic reservoir. This was performed through calculation of free metal ions using the chemical equilibrium software MINEQL+ 4.61, determination of labile, dissolved, and total metal concentrations via differential pulse anodic stripping voltammetry, and determination of complexed metal by the difference between the total concentration of dissolved and labile metal. Additionally, ligand complexation capacities (CC), such as the strength of the association of metals-ligands (logK'ML) and ligand concentrations (C L) were calculated via Ruzic's linearization method. Water samples were taken in winter and summer, and the results showed that for total and dissolved metals, Zn > Cu > Pb > Cd concentration. In general, higher concentrations of Cu and Zn remained complexed with the dissolved fraction, while Pb was mostly complexed with particulate materials. Chemical equilibrium modeling (MINEQL+) showed that Zn(2+) and Cd(2+) dominated the labile species, while Cu and Pb were complexed with carbonates. Zinc was a unique metal for which a direct relation between dissolved species with labile and complexed forms was obtained. The CC for ligands indicated a higher C L for Cu, followed by Pb, Zn, and Cd in decreasing amounts. Nevertheless, the strength of the association of all metals and their respective ligands was similar. Factor analysis with principal component analysis as the extraction procedure confirmed seasonal effects on water quality parameters and metal speciation. Total, dissolved, and complexed Cu and total, dissolved, complexed, and labile Pb species were all higher in winter, whereas in summer, Zn was mostly present in the

Insulators for Pb(1-x)Sn(x)Te

NASA Technical Reports Server (NTRS)

Tsuo, Y. H.; Sher, A.

1981-01-01

Thin films of LaF3 were e-gun and thermally deposited on several substrates. The e-gun deposited films are fluorine deficient, have high ionic conductivities that persist to 77 K, and high effective dielectric constants. The thermally deposited material tends to be closer to stoichiometric, and have higher effective breakdown field strengths. Thermally deposited LaF3 films with resistivities in excess of 10 to the 12th power ohms - cm were deposited on metal coated glass substrates. The LaF3 films were shown to adhere well to PbSnTe, surviving repeated cycles between room temperature and 77 K. The LaF3 films on GaAs were also studied.

High-speed electrodeposition of copper-tin-zinc stacks from liquid metal salts for Cu2ZnSnSe4 solar cells.

PubMed

Steichen, Marc; Malaquias, João C; Arasimowicz, Monika; Djemour, Rabie; Brooks, Neil R; Van Meervelt, Luc; Fransaer, Jan; Binnemans, Koen; Dale, Phillip J

2017-01-16

Cu 2 ZnSnSe 4 -based solar cells with 5.5% power conversion efficiency were fabricated from Cu/Sn/Zn stacks electrodeposited from liquid metal salts. These electrolytes allow metal deposition rates one order of magnitude higher than those of other deposition methods.

Asymmetric ZnO panel-like hierarchical architectures with highly interconnected pathways for free-electron transport and photovoltaic improvements.

PubMed

Shi, Yantao; Zhu, Chao; Wang, Lin; Li, Wei; Fung, Kwok Kwong; Wang, Ning

2013-01-02

Through a rapid and template-free precipitation approach, we synthesized an asymmetric panel-like ZnO hierarchical architecture (PHA) for photoanodes of dye-sensitized solar cells (DSCs). The two sides of the PHA are constructed differently using densely interconnected, mono-crystalline and ultrathin ZnO nanosheets. By mixing these PHAs with ZnO nanoparticles (NPs), we developed an effective and feasible strategy to improve the electrical transport and photovoltaic performance of the composite photoanodes of DSCs. The highly crystallized and interconnected ZnO nanosheets largely minimized the total grain boundaries within the composite photoanodes and thus served as direct pathways for the transport and effective collection of free electrons. Through low-temperature (200 °C) annealing, these novel composite photoanodes achieved high conversion efficiencies of up to 5.59% for ZnO-based quasi-solid DSCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mineralogy, fluid inclusion petrography, and stable isotope geochemistry of Pb-Zn-Ag veins at the Shizhuyuan deposit, Hunan Province, southeastern China

NASA Astrophysics Data System (ADS)

Wu, Shenghua; Mao, Jingwen; Yuan, Shunda; Dai, Pan; Wang, Xudong

2018-01-01

The Shizhuyuan polymetallic deposit is located in the central part of the Nanling region, southeastern China, and consists of proximal W-Sn-Mo-Bi skarns and greisens and distal Pb-Zn-Ag veins. The sulfides and sulfosalts in the distal veins formed in three distinct stages: (1) an early stage of pyrite and arsenopyrite, (2) a middle stage of sphalerite and chalcopyrite, and (3) a late stage of galena, Ag-, Sn-, and Bi-bearing sulfides and sulfosalts, and pyrrhotite. Combined sulfide and sulfosalt geothermometry and fluid inclusion analyses indicate that the early stage of mineralization occurred at a temperature of 400 °C and involved boiling under hydrostatic pressure ( 200 bar), with the temperature of the system dropping during the late stage to 200 °C. Laser Raman analysis indicates that the fluid inclusions within the studied minerals are dominated by H2O, although some contain carbonate solids and CH4 gas. Vein-hosted sulfides have δ34S values of 3.8-6.3‰ that are interpreted as indicative of a magmatic source of sulfur. The mineralization process can be summarized as follows: an aqueous fluid exsolved on final crystallization of the Qianlishan pluton, ascended along fracture zones, cooled to <400 °C, and boiled under hydrostatic conditions, and with decreasing temperature and sulfur fugacity, sulfide and sulfosalt minerals precipitated successively from the Ag-Cu-Zn-Fe-Pb-Sb-As-S-bearing fluid system.

Temperature induced phase transformations and negative electrocaloric effect in (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric single crystal

NASA Astrophysics Data System (ADS)

Zhuo, Fangping; Li, Qiang; Yan, Qingfeng; Zhang, Yiling; Wu, Hong-Hui; Xi, Xiaoqing; Chu, Xiangcheng; Cao, Wenwu

2017-10-01

Temperature induced phase transitions and electrocaloric effect (ECE) of (Pb,La)(Zr,Sn,Ti)O3 (PLZST) single crystals have been comprehensively studied. Based on the in situ evolution of domain structures and dielectric properties of the PLZST crystals, the phase transitions during heating are in the sequence of orthorhombic antiferroelectric → rhombohedral ferroelectric → cubic paraelectric. Coexistence of the negative and positive ECEs has been achieved in the PLZST single crystals. A negative ECE value of -1.26 °C and enhanced electrocaloric strength of -0.21 K mm/kV near the Curie temperature have been obtained. A modified Landau model gives a satisfactory description of the experimentally observed unusual ECE. Moreover, a temperature-electric field phase diagram is also established based on theoretical analysis. Our results will help people understand better the electrocaloric family, particularly on the negative and/or positive effect in antiferroelectrics and ferroelectrics.

An experimental study of Pb and Zn as a function of HCl at 300 and 500°C

NASA Astrophysics Data System (ADS)

Rock, M.; Frank, M. R.

2017-12-01

variable. Thus, galena and sphalerite can precipitate from a reduced sulfur-bearing fluid provided the acidity of the fluid was sufficiently high during transportation. Further, the variable Pb:Zn ratios observed in some ore-bearing systems could be a result of differences in the rate of change of temperature, acidity, and reduced sulfur and not from separate pulses of distinct mineralizing fluids.

A simulation study to improve the efficiency of ZnO1-xSx/Cu2ZnSn (Sy, Se1-y)4 solar cells by composition-ratio control

NASA Astrophysics Data System (ADS)

Sharbati, S.; Norouzzadeh, E.; Mohammadi, S.

2018-04-01

This work investigates the impact of the conduction-band offset (CBO) and valence band offset (VBO) on the performance of Zn (O, S)/Cu2ZnSn (S, Se)4 solar cells by numerical simulations. The band gap alignment at the buffer-CZTS layer interface are controlled by the sulfur-to-oxygen and sulfur-to-selenium ratios. The simulation results show that the high sulfur content in the Zn (O, S) layer makes a big offset in the conduction band and high oxygen content in the in the Zn (O, S) layer eventuates in large valence band offset, that descends Cu2ZnSn (S, Se)4 solar cell performance. We established an initial device model based on an experimental device with world record efficiencies of 12.6%. This study shows that most suitable heterojunction for ZnO1-xSx/Cu2ZnSn (Sy, Se1-y)4 solar cells is when sulfur content ranging 19%-50% in the Zn (O, S) and 30%-50% in the CZTSSe. The efficiency of Cu2ZnSn (S, Se)4 solar cells will be achieved to 14.3%.

The single-crystal multinary compound Cu2ZnSnS4 as an environmentally friendly high-performance thermoelectric material

NASA Astrophysics Data System (ADS)

Nagaoka, Akira; Masuda, Taizo; Yasui, Shintaro; Taniyama, Tomoyasu; Nose, Yoshitaro

2018-05-01

We investigated the thermoelectric properties of high-quality p-type Cu2ZnSnS4 single crystals. This material showed two advantages: low thermal conductivity because of lattice scattering caused by the easily formed Cu/Zn disordered structure, and high conductivity because of high doping from changes to the composition. All samples showed a thermal conductivity of 3.0 W m‑1 K‑1 at 300 K, and the Cu-poor sample showed a conductivity of 7.5 S/cm at 300 K because of the high density of shallow-acceptor Cu vacancies. The figure of merit of the Cu-poor Cu2ZnSnS4 reached 0.2 at 400 K, which is 1.4–45 times higher than those of related compounds.

Solar Synthesis of PbS-SnS2 Superstructure Nanoparticles.

PubMed

Brontvein, Olga; Albu-Yaron, Ana; Levy, Moshe; Feuerman, Daniel; Popovitz-Biro, Ronit; Tenne, Reshef; Enyashin, Andrey; Gordon, Jeffrey M

2015-08-25

We report the synthesis and supporting density-functional-theory computations for a closed-cage, misfit layered-compound superstructure from PbS-SnS2, generated by highly concentrated sunlight from a precursor mixture of Pb, SnS2, and graphite. The unique reactor conditions created in our solar furnace are found to be particularly conducive to the formation of these nanomaterials. Detailed structural and chemical characterization revealed a spontaneous inside-out formation mechanism, with a broad range of nonhollow fullerene-like structures starting at a diameter of ∼20 nm and a wall thickness of ∼5 layers. The computations also reveal a counterintuitive charge transfer pathway from the SnS2 layers to the PbS layers, which indicates that, in contrast to binary-layered compounds where it is principally van der Waals forces that hold the layers together, polar forces appear to be as important in stabilizing superstructures of misfit layered compounds.

X-ray fluorescence determination of Sn, Sb, Pb in lead-based bearing alloys using a solution technique

NASA Astrophysics Data System (ADS)

Tian, Lunfu; Wang, Lili; Gao, Wei; Weng, Xiaodong; Liu, Jianhui; Zou, Deshuang; Dai, Yichun; Huang, Shuke

2018-03-01

For the quantitative analysis of the principal elements in lead-antimony-tin alloys, directly X-ray fluorescence (XRF) method using solid metal disks introduces considerable errors due to the microstructure inhomogeneity. To solve this problem, an aqueous solution XRF method is proposed for determining major amounts of Sb, Sn, Pb in lead-based bearing alloys. The alloy samples were dissolved by a mixture of nitric acid and tartaric acid to eliminated the effects of microstructure of these alloys on the XRF analysis. Rh Compton scattering was used as internal standard for Sb and Sn, and Bi was added as internal standard for Pb, to correct for matrix effects, instrumental and operational variations. High-purity lead, antimony and tin were used to prepare synthetic standards. Using these standards, calibration curves were constructed for the three elements after optimizing the spectrometer parameters. The method has been successfully applied to the analysis of lead-based bearing alloys and is more rapid than classical titration methods normally used. The determination results are consistent with certified values or those obtained by titrations.

Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

NASA Astrophysics Data System (ADS)

Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

2016-10-01

One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on.

Porous carbon-free SnSb anodes for high-performance Na-ion batteries

NASA Astrophysics Data System (ADS)

Choi, Jeong-Hee; Ha, Choong-Wan; Choi, Hae-Young; Seong, Jae-Wook; Park, Cheol-Min; Lee, Sang-Min

2018-05-01

A simple melt-spinning/chemical-etching process is developed to create porous carbon-free SnSb anodes. Sodium ion batteries (SIBs) incorporating these anodes exhibit excellent electrochemical performances by accomodating large volume changes during repeated cycling. The porous carbon-free SnSb anode produced by the melt-spinning/chemical-etching process shows a high reversible capacity of 481 mAh g-1, high ICE of 80%, stable cyclability with a high capacity retention of 99% after 100 cycles, and a fast rate capability of 327 mAh g-1 at 4C-rate. Ex-situ X-ray diffraction and high resolution-transmission electron microscopy analyses demonstrate that the synthesized porous carbon-free SnSb anodes involve the highly reversible reaction with sodium through the conversion and recombination reactions during sodiation/desodiation process. The novel and simple melt-spinning/chemical-etching synthetic process represents a technological breakthrough in the commercialization of Na alloy-able anodes for SIBs.

Energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O3

NASA Astrophysics Data System (ADS)

Klein, Andreas; Lohaus, Christian; Reiser, Patrick; Dimesso, Lucangelo; Wang, Xiucai; Yang, Tongqing

2017-06-01

The energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 is studied with photoelectron spectroscopy using interfaces with high work function RuO2 and low work function Sn-doped In2O3 (ITO). It is demonstrated how spectral deconvolution can be used to determine absolute Schottky barrier heights for insulating materials with a high accuracy. Using this approach it is found that the valence band maximum energy of (Pb,La)(Zr,Sn,Ti)O3 is found to be comparable to that of Pb- and Bi-containing ferroelectric materials, which is ∼1 eV higher than that of BaTiO3. The results provide additional evidence for the occupation of the 6s orbitals as origin of the higher valence band maximum, which is directly related to the electrical properties of such compounds. The results also verify that the energy band alignment determined by photoelectron spectroscopy of as-deposited electrodes is not influenced by polarisation. The electronic structure of (Pb,La)(Zr,Sn,Ti)O3 should enable doping of the material without strongly modifying its insulating properties, which is crucial for high energy density capacitors. Moreover, the position of the energy bands should result in a great freedom of selecting electrode materials in terms of avoiding charge injection.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

NASA Astrophysics Data System (ADS)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4

NASA Astrophysics Data System (ADS)

Zhu, Yingcai; Liu, Yong; Tan, Xing; Ren, Guangkun; Yu, Meijuan; Hu, Tiandou; Marcelli, Augusto; Xu, Wei

2018-04-01

Quaternary chalcogenide Cu2ZnSnSe4 (CZTSe) is a promising wide band-gap p-type thermoelectric material. The structure and thermoelectric properties of lead substituted Cu2ZnSn1-xPbxSe4 are investigated. Lead primarily exists in the framework of PbSe as demonstrated by x-ray diffraction and calculation of x-ray absorption near-edge structure spectroscopy. The second phase distributes at the boundaries of CZTSe with thickness in several hundreds of nanometer. With appropriate grain boundary engineering, the enhancement of power factor and a decrease of thermal conductivity can be achieved simultaneously. As a result, a maximum figure of merit zT of 0.45 is obtained for the sample with x=0.02 at 723K.

Influence of multi-walled carbon nanotubes on melting temperature and microstructural evolution of Pb-free Sn-5Sb/Cu solder joint

NASA Astrophysics Data System (ADS)

Dele-Afolabi, T. T.; Azmah Hanim, M. A.; Norkhairunnisa, M.; Suraya, M. T.; Yusoff, H. M.

2017-09-01

In this study, the effects of multi-walled carbon nanotubes on the melting temperature and microstructural evolution of the Sn-5Sb/Cu joints are evaluated. Plain and carbon nanotubes (CNTs) reinforced Sn-5Sb solder systems with solder formulations Sn-5Sb, Sn-5Sb-0.01CNT, Sn-5Sb-0.05CNT and Sn-5Sb-0.1CNT were prepared through the powder metallurgy route and thereafter samples were subjected to thermal and microstructural evaluation. As retrieved from the DSC scans, a slight decline in the peak temperature was observed in the composite solders which is indicative of the CNTs role in exciting surface instability in the host Sn matrix. In order to prepare the solder joints and analyze the interfacial intermetallic compound (IMC) evolution, respective solder systems were placed on copper (Cu) substrate and subjected to both reflow soldering and isothermal aging (170°C) conditions. From the IMC thickness result, considerable retardation in the IMC layer growth was observed in the CNTs reinforced solder joints, especially the 0.05wt.% CNTs solder system owing to the inhibition of Sn atoms diffusion by reinforcement material.

Structural, morphological and electrical properties of Sn-substituted Ni-Zn ferrites synthesized by double sintering technique

NASA Astrophysics Data System (ADS)

Ali, M. A.; Uddin, M. M.; Khan, M. N. I.; Chowdhury, F.-U.-Z.; Haque, S. M.

2017-02-01

The Sn-substituted Ni-Zn ferrites, (0.0≤x≤0.30), have been synthesized by the standard double sintering technique from the oxide nanopowders of Ni, Zn, Fe and Sn. The structural and electrical properties have been investigated by the X-ray diffraction (XRD), scanning electron microscopy (SEM), DC resistivity and dielectric measurements. From XRD data, the single cubic spinel phase has been confirmed for x≤0.1, whereas for x>0.1 an extra intermediate phase has been detected along with the cubic spinel phase of Ni-Zn ferrite. The grain size is increased due to Sn substitution in Ni-Zn ferrites. DC resistivity as a function of temperature has been measured by two probe method. The semiconducting nature has been found operative in the samples. The DC resistivity was found to decrease whilst the dielectric constant increased with increasing Sn content in Ni-Zn ferrites. The unusual behavior of the dielectric loss factor of the ferrites was explained by the Rezlescu model. The electrical relaxation of the ferrites has been studied in terms of electric modulus formalism and the time for dielectric relaxation was calculated. The contribution of grain resistance has been studied from the Cole-Cole plot. The suitability to use the as prepared samples in the miniaturized memory devices based capacitive components or energy storage principles are confirmed from the values of dielectric constant.

Probing the distribution and contamination levels of 10 trace metal/metalloids in soils near a Pb/Zn smelter in Middle China.

PubMed

Li, Zhonggen; Feng, Xinbin; Bi, Xiangyang; Li, Guanghui; Lin, Yan; Sun, Guangyi

2014-03-01

The horizontal and vertical distribution patterns and contamination status of ten trace metal/metalloids (Ag, Bi, Co, Cr, Ge, In, Ni, Sb, Sn, Tl) in soils around one of the largest Chinese Pb-Zn smelter in Zhuzhou City, Central China, were revealed. Different soil samples were collected from 11 areas, including ten agricultural areas and one city park area, with a total of 83 surface soil samples and six soil cores obtained. Trace metal/metalloids were determined by inductively coupled plasma-mass spectrometry after digestion by an acid mixture of HF and HNO3. The results showed that Ag, Bi, In, Sb, Sn, and Tl contents decreased both with the distance to the Pb-Zn smelter as well as the soil depth, hinting that these elements were mainly originated from the Pb-Zn smelting operations and were introduced into soils through atmospheric deposition. Soil Ge was influenced by the smelter at a less extent, while the distributions of Co, Cr, and Ni were roughly even among most sampling sites and soil depths, suggesting that they were primarily derived from natural sources. The contamination status, as revealed by the geo-accumulation index (I geo), indicated that In and Ag were the most enriched elements, followed by Sb, Bi, and Sn. In general, Cr, Tl, Co, Ni, and Ge were of an uncontaminated status.

Influence of Sn4+ on Structural and DC Electrical Resistivity of Ni-Zn Ferrite Thick Films

NASA Astrophysics Data System (ADS)

Dalawai, S. P.; Shinde, T. J.; Gadkari, A. B.; Tarwal, N. L.; Jang, J. H.; Vasambekar, P. N.

2017-03-01

Among the soft ferrites, Ni-Zn ferrite is one of the most versatile ceramic materials because of their important electrical and magnetic properties. These properties were improved by substituting Sn4+ in Ni-Zn ferrites with chemical composition of Ni x Zn1+ y- x Fe2-2 y Sn y O4 ( x = 0, 0.2, 0.4, 0.6, 0.8, 1.0; y = 0.1, 0.2). To achieve homogenous ferrite powder at lower sintering temperature and smaller duration in nano-size form, the oxalate co-precipitation method was preferred as compared to other physical and chemical methods. Using this powder, ferrite thick films (FTFs) were prepared by the screen printing technique because of its low cost and easy use. To study structural behavior, the FTFs were characterized by different techniques. The x-ray diffraction and thermo-gravimetric and differential thermal analysis studies show the formation of cubic spinel structure and ferrite phase formation, respectively. There is no remarkable trend observed in lattice constants for the Sn4+ ( y = 0.1)- and Sn4+ ( y = 0.2)-substituted Ni-Zn ferrites. The bond lengths as well as ionic radii on the A-site of Ni-Zn-Sn ferrites were found to decrease with increasing nickel content. The bond length and ionic radii on the B-sites remained almost constant for Sn4+ ( y = 0.1, 0.2)-substituted Ni-Zn ferrites. The energy dispersive x-ray analysis confirms the elemental analysis of FTFs. The Fourier transform infrared spectra show two major absorption bands near 400 cm-1 and 600 cm-1 corresponding to octahedral and tetrahedral sites, respectively, which also confirms the formation of the ferrites. The field emission scanning electron microscopy images shows that the particles are highly porous in nature and located in loosely packed agglomerates. The average particle size of the FTFs lies in the range 20-60 nm. Direct current (DC) resistivity of Ni-Zn-Sn FTFs shows the semiconductor nature. The DC resistivity of Ni-Zn-Sn0.2FTFs is lower than Ni-Zn-Sn0.1 FTFs. The DC resistivity is

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

PubMed

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Temperature-dependent dielectric and energy-storage properties of Pb(Zr,Sn,Ti)O3 antiferroelectric bulk ceramics

NASA Astrophysics Data System (ADS)

Chen, Xuefeng; Liu, Zhen; Xu, Chenhong; Cao, Fei; Wang, Genshui; Dong, Xianlin

2016-05-01

The dielectric and energy-storage properties of Pb0.99Nb0.02[(Zr0.60Sn0.40)0.95Ti0.05]0.98O3 (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T0, TC, T2 are obtained from the dielectric temperature spectrum. At different temperature regions (below T0, between T0 and TC, and above TC), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reach their peak values at ˜T0. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics.

The Influence of Sn Orientation on the Electromigration of Idealized Lead-free Interconnects

NASA Astrophysics Data System (ADS)

Linares, Xioranny

As conventional lead solders are being replaced by Pb-free solders in electronic devices, the reliability of solder joints in integrated circuits (ICs) has become a high concern. Due to the miniaturization of ICs and consequently solder joints, the current density through the solder interconnects has increased causing electrical damage known as electromigration. Electromigration, atomic and mass migration due to high electron currents, is one of the most urgent reliability issues delaying the implementation of Pb-free solder materials in electronic devices. The research on Pb-free solders has mainly focused on the qualitative understanding of failure by electromigration. There has been little progress however, on the quantitative analysis of electromigration because of the lack of available material parameters, such as the effective charge, (z*), the driving force for electromigration. The research herein uses idealized interconnects to measure the z* of electromigration of Cu in Sn-3.0Ag-0.5Cu (SAC305) alloy under different experimental conditions. Planar SAC 305 interconnects were sandwiched between two Cu pads and subject to uniaxial current. The crystallographic orientation of Sn in these samples were characterized with electron backscatter diffraction (EBSD) and wavelength dispersive spectroscopy (WDS) before and after electromigration testing. Results indicate that samples with the c-axis aligned perpendicular to current flow, polycrystalline, and those with a diffusion barrier on the cathode side all inhibit the growth of intermetallic compounds (IMC). The effective charge values of Cu in SAC 305 under the different conditions tested were quantified for the first time and included in this dissertation. The following research is expected to help verify and improve the electromigration model and identify the desirable conditions to inhibit damage by electromigration in Pb-free solder joints.

Comparative study on thermodynamic characteristics of AgCuZnSn brazing alloys

NASA Astrophysics Data System (ADS)

Wang, Xingxing; Li, Shuai; Peng, Jin

2018-01-01

AgCuZnSn brazing alloys were prepared based on the BAg50CuZn filler metal through electroplating diffusion process, and melting alloying method. The thermodynamics of phase transformations of those fillers were analyzed by non-isothermal differentiation and integration methods of thermal analysis kinetics. In this study, it was demonstrated that as the Sn content increased, the reaction fractional integral curves of AgCuZnSn fillers from solid to liquid became straighter at the endothermic peak. Under the same Sn contents, the reaction fractional integral curve of the Sn-plated filler metal was straighter, and the phase transformation activation energy was higher compared to the traditional silver filler metal. At the 7.2 wt% Sn content, the activation energies and pre-exponential factors of the two fillers reached the maximum, then the phase transformation rate equations of the Sn-plated silver filler and the traditional filler were determined as: k = 1.41 × 1032exp(-5.56 × 105/RT), k = 7.29 × 1020exp(-3.64 × 105/RT), respectively.

Investigation of transport properties of ZnO/PbS heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cheng, Yang; Whitaker, Michael D. C.; Whiteside, Vincent R.; Bumm, Lloyd A.; Sellers, Ian R.

Lead sulfide (PbS) and lead selenide (PbSe) colloidal quantum dots (CQDs) are considered as a potential candidate material for solar cell applications due to their large band gap tunability range (0.5 to 1.7 eV) and cost-effective solution based processing. A series of Glass/ITO/ZnO/PbS/MoO3/Au heterojunction solar cells were processed and analyzed. A stable (reproducible) 2% conversion efficiency under 1-sun is achieved based on the result of J - V measurements. Absorbance and external quantum efficiency (EQE) measurements clearly show photo-generated carrier extraction from PbS active layers in the solar cell. However, a non-ideal J - V behavior is observed in current-voltage measurements. This behavior may be attributed to a high density of trap states at the QD surface or defect states at the PbS/ZnO or ITO/ZnO interfaces. C-V and Impedance spectroscopy measurements are used to study this unusual behavior. These techniques could also help probe the transport properties and limitation of these heterojunction solar cells. This research is funded through NASA EPSCoR program Award # NNX13AN101A.

Thermally evaporated Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, K.; Gunawan, O.; Todorov, T.; Shin, B.; Chey, S. J.; Bojarczuk, N. A.; Mitzi, D.; Guha, S.

2010-10-01

High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1 μm and annealing times in the minutes. Detailed electrical analysis of the devices indicate that the performance of the devices is limited by high series resistance, a "double diode" behavior of the current voltage characteristics, and an open circuit voltage that is limited by a carrier recombination process with an activation energy below the band gap of the material.

Microstructure and properties of Cu-Sn-Zn-TiO 2 nano-composite coatings on mild steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Weidong; Cao, Di; Jin, Yunxue

Cu-Sn-Zn coatings have been widely used in industry for their unique properties, such as good conductivity, high corrosion resistance and excellent solderability. To further improve the mechanical performance of Cu-Sn-Zn coatings, powder-enhanced method was applied and Cu-Sn-Zn-TiO 2 nano-composite coatings with different TiO 2 concentration were fabricated. The microstructure of Cu-Sn-Zn-TiO 2 nano-composite coatings were investigated by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The mechanical properties of coatings including microhardness and wear resistance were studied. The results indicate that the incorporation of TiO 2 nanoparticle can significantly influence the properties of Cu-Sn-Zn coatings. The microhardness of Cu-Sn-Zn coatingmore » was increased to 383 HV from 330 HV with 1 g/L TiO 2 addition. Also, the corrosion resistance of coating was enhanced. The effects of TiO 2 nanoparticle concentration on the microstructure, mechanical properties and corrosion resistance of Cu-Sn-Zn-TiO 2 nano-composite coatings were discussed.« less

Microstructure and properties of Cu-Sn-Zn-TiO 2 nano-composite coatings on mild steel

DOE PAGES

Gao, Weidong; Cao, Di; Jin, Yunxue; ...

2018-04-18

Cu-Sn-Zn coatings have been widely used in industry for their unique properties, such as good conductivity, high corrosion resistance and excellent solderability. To further improve the mechanical performance of Cu-Sn-Zn coatings, powder-enhanced method was applied and Cu-Sn-Zn-TiO 2 nano-composite coatings with different TiO 2 concentration were fabricated. The microstructure of Cu-Sn-Zn-TiO 2 nano-composite coatings were investigated by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The mechanical properties of coatings including microhardness and wear resistance were studied. The results indicate that the incorporation of TiO 2 nanoparticle can significantly influence the properties of Cu-Sn-Zn coatings. The microhardness of Cu-Sn-Zn coatingmore » was increased to 383 HV from 330 HV with 1 g/L TiO 2 addition. Also, the corrosion resistance of coating was enhanced. The effects of TiO 2 nanoparticle concentration on the microstructure, mechanical properties and corrosion resistance of Cu-Sn-Zn-TiO 2 nano-composite coatings were discussed.« less

Selective thermal transformation of old computer printed circuit boards to Cu-Sn based alloy.

PubMed

Shokri, Ali; Pahlevani, Farshid; Cole, Ivan; Sahajwalla, Veena

2017-09-01

This study investigates, verifies and determines the optimal parameters for the selective thermal transformation of problematic electronic waste (e-waste) to produce value-added copper-tin (Cu-Sn) based alloys; thereby demonstrating a novel new pathway for the cost-effective recovery of resources from one of the world's fastest growing and most challenging waste streams. Using outdated computer printed circuit boards (PCBs), a ubiquitous component of e-waste, we investigated transformations across a range of temperatures and time frames. Results indicate a two-step heat treatment process, using a low temperature step followed by a high temperature step, can be used to produce and separate off, first, a lead (Pb) based alloy and, subsequently, a Cu-Sn based alloy. We also found a single-step heat treatment process at a moderate temperature of 900 °C can be used to directly transform old PCBs to produce a Cu-Sn based alloy, while capturing the Pb and antimony (Sb) as alloying elements to prevent the emission of these low melting point elements. These results demonstrate old computer PCBs, large volumes of which are already within global waste stockpiles, can be considered a potential source of value-added metal alloys, opening up a new opportunity for utilizing e-waste to produce metal alloys in local micro-factories. Copyright © 2017 Elsevier Ltd. All rights reserved.

Enhanced Ethanol Gas Sensing Properties of SnO2-Core/ZnO-Shell Nanostructures

PubMed Central

Tharsika, T.; Haseeb, A. S. M. A.; Akbar, Sheikh A.; Sabri, Mohd Faizul Mohd; Hoong, Wong Yew

2014-01-01

An inexpensive single-step carbon-assisted thermal evaporation method for the growth of SnO2-core/ZnO-shell nanostructures is described, and the ethanol sensing properties are presented. The structure and phases of the grown nanostructures are investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. XRD analysis indicates that the core-shell nanostructures have good crystallinity. At a lower growth duration of 15 min, only SnO2 nanowires with a rectangular cross-section are observed, while the ZnO shell is observed when the growth time is increased to 30 min. Core-shell hierarchical nanostructures are present for a growth time exceeding 60 min. The growth mechanism for SnO2-core/ZnO-shell nanowires and hierarchical nanostructures are also discussed. The sensitivity of the synthesized SnO2-core/ZnO-shell nanostructures towards ethanol sensing is investigated. Results show that the SnO2-core/ZnO-shell nanostructures deposited at 90 min exhibit enhanced sensitivity to ethanol. The sensitivity of SnO2-core/ZnO-shell nanostructures towards 20 ppm ethanol gas at 400 °C is about ∼5-times that of SnO2 nanowires. This improvement in ethanol gas response is attributed to high active sensing sites and the synergistic effect of the encapsulation of SnO2 by ZnO nanostructures. PMID:25116903

Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

NASA Astrophysics Data System (ADS)

Levcenko, S.; Hajdeu-Chicarosh, E.; Garcia-Llamas, E.; Caballero, R.; Serna, R.; Bodnar, I. V.; Victorov, I. A.; Guc, M.; Merino, J. M.; Pérez-Rodriguez, A.; Arushanov, E.; León, M.

2018-04-01

The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2-4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.

Effects of Zn2+ and Pb2+ dopants on the activity of Ga2O3-based photocatalysts for water splitting.

PubMed

Wang, Xiang; Shen, Shuai; Jin, Shaoqing; Yang, Jingxiu; Li, Mingrun; Wang, Xiuli; Han, Hongxian; Li, Can

2013-11-28

Zn-doped and Pb-doped β-Ga2O3-based photocatalysts were prepared by an impregnation method. The photocatalyst based on the Zn-doped β-Ga2O3 shows a greatly enhanced activity in water splitting while the Pb-doped β-Ga2O3 one shows a dramatic decrease in activity. The effects of Zn(2+) and Pb(2+) dopants on the activity of Ga2O3-based photocatalysts for water splitting were investigated by HRTEM, XPS and time-resolved IR spectroscopy. A ZnGa2O4-β-Ga2O3 heterojunction is formed in the surface region of the Zn-doped β-Ga2O3 and a slower decay of photogenerated electrons is observed. The ZnGa2O4-β-Ga2O3 heterojunction exhibits type-II band alignment and facilitates charge separation, thus leading to an enhanced photocatalytic activity for water splitting. Unlike Zn(2+) ions, Pb(2+) ions are coordinated by oxygen atoms to form polyhedra as dopants, resulting in distorted surface structure and fast decay of photogenerated electrons of β-Ga2O3. These results suggest that the Pb dopants act as charge recombination centers expediting the recombination of photogenerated electrons and holes, thus decreasing the photocatalytic activity.

Melt Stabilization of PbSnTe in a Magnetic Field

NASA Technical Reports Server (NTRS)

Fripp, Archibald L.; Debnam, William J.; Rosch, William; Chait, Arnon; Yao, Minwu; Szofran, Frank R.

1999-01-01

Both the experimental observation and numerical simulation indicate that the Bridgman growth of PbSnTe under the microgravity environment in space is still greatly influenced by buoyancy-induced convection. The application of a magnetic field during the semiconductor growth can dampen the convective flow in the metal-like melt. However, for Bridgman growth of PbSnTe on earth (with either vertical or horizontal configuration), both experimental observation and numerical modeling suggest that even with a strong magnetic furnace (5-Tesla constant axial magnetic field), the convective flow in the melt still cannot be sufficiently suppressed to reach the diffusion-controlled level. In order to completely dampen the buoyancy-induced convection on earth, estimates based on scaling analysis indicate that for common experimental conditions, an extremely high magnetic field is required, far beyond the capacity of the experimental apparatus currently available. Therefore, it is proposed that only the combination of microgravity environment and magnetic damping will produce the desired diffusion-controlled growth state for this particular material. The primary objectives of this study are to provide a quantitative understanding of the complex transport phenomena during solidification of non-dilute binarys, to furnish a numerical tool for furnace design and growth condition optimization, to provide estimates of the required magnetic field strength for low gravity growth, and to assess the role of magnetic damping for space and earth control of the double-diffusive convection. As an integral part of a NASA research program, our numerical simulation supports both the flight and ground-based experiments in an effort to bring together a complete picture of the complex physical phenomena involved in the crystal growth process. For Bridgman growth of PbSnTe under microgravity (with both vertical and horizontal configurations), the simulations suggest that a moderate axial magnetic

Crystal Structure and Magnetic Properties of New Cubic Quaternary Compounds RT2Sn2Zn18 (R = La, Ce, Pr, and Nd, and T = Co and Fe)

NASA Astrophysics Data System (ADS)

Isikawa, Yosikazu; Mizushima, Toshio; Ejiri, Jun-ichi; Kitayama, Shiori; Kumagai, Keigou; Kuwai, Tomohiko; Bordet, Pierre; Lejay, Pascal

2015-07-01

The new cubic quaternary intermetallic compounds RT2Sn2Zn18 (R = La, Ce, Pr, and Nd, and T = Co and Fe) were synthesized by the mixture-metal flux method using Zn and Sn. The crystal structure was investigated by powder X-ray diffraction and with a four-circle X-ray diffractometer using single crystals. The space group of the compounds is Fdbar{3}m (No. 227). The rare-earth atom is at the cubic site which is the center of a cage composed of Zn and Sn atoms. The crystal structure is the same as the CeCr2Al20-type crystal structure except the atoms at the 16c site, i.e., the Zn atoms at the 16c site are completely replaced by Sn atoms, indicating that the compounds are crystallographically new ordered quaternary compounds. The lattice parameter a and the physical properties of the magnetic susceptibility χ, the magnetization M, and the specific heat C of these cubic caged compounds were investigated. LaCo2Sn2Zn18 and LaFe2Sn2Zn18 are enhanced Pauli paramagnets that originate from the Co and Fe itinerant 3d electrons. CeCo2Sn2Zn18 and CeFe2Sn2Zn18 are also enhanced Pauli paramagnets that originate from both the 3d electrons and Ce 4f electrons. PrCo2Sn2Zn18 and PrFe2Sn2Zn18 are nonmagnetic materials with huge values of C divided by temperature, which indicates that the ground state of Pr ions is a non-Kramers' doublet. NdCo2Sn2Zn18 and NdFe2Sn2Zn18 are magnetic materials with the Néel temperatures of 1.0 and 3.8 K, respectively. All eight compounds have large magnetic moments of Co/Fe in the paramagnetic temperature region, and thus their magnetic moments are inferred to be magnetically frustrating owing to the pyrochlore lattice in the low-temperature region.

High-performance Ti/Sb-SnO(2)/Pb(3)O(4) electrodes for chlorine evolution: preparation and characteristics.

PubMed

Shao, Dan; Yan, Wei; Cao, Lu; Li, Xiaoliang; Xu, Hao

2014-02-28

Chlorine evolution via electrochemical approach has wide application prospects in drinking water disinfection and wastewater treatment fields. Dimensional stable anodes used for chlorine evolution should have high stability and adequate chlorine evolution efficiency. Thus a novel and cost-effective Ti/Sb-SnO(2)/Pb(3)O(4)electrode was developed. The physicochemical and electrochemical properties as well as the chlorine evolution performances of the electrodes were investigated. The electrocatalytic activity and deactivation course of the electrodes were also explored. Results showed that this novel electrode had strong chlorine evolution ability with high current efficiency ranging from 87.3% to 93.4% depending on the operational conditions. The accelerated service life of Ti/Sb-SnO(2)/Pb(3)O(4) electrode could reach 180 h at a current density of 10,000 A m(-2) in 0.5 molL(-1) H(2)SO(4). During the electrolysis process, it was found that the conversion of Pb(3)O(4) into β-PbO(2) happened gradually on the electrode surface, which not only inhibited the leakage of hazardous Pb(2+) ion but also increased the anti-corrosion capacity of the electrode effectively. Copyright © 2014 Elsevier B.V. All rights reserved.

The electrical properties of n-ZnO/p-SnO heterojunction diodes

NASA Astrophysics Data System (ADS)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

Thermodynamics of Pb(ii) and Zn(ii) binding to MT-3, a neurologically important metallothionein.

PubMed

Carpenter, M C; Shami Shah, A; DeSilva, S; Gleaton, A; Su, A; Goundie, B; Croteau, M L; Stevenson, M J; Wilcox, D E; Austin, R N

2016-06-01

Isothermal titration calorimetry (ITC) was used to quantify the thermodynamics of Pb(2+) and Zn(2+) binding to metallothionein-3 (MT-3). Pb(2+) binds to zinc-replete Zn7MT-3 displacing each zinc ion with a similar change in free energy (ΔG) and enthalpy (ΔH). EDTA chelation measurements of Zn7MT-3 and Pb7MT-3 reveal that both metal ions are extracted in a tri-phasic process, indicating that they bind to the protein in three populations with different binding thermodynamics. Metal binding is entropically favoured, with an enthalpic penalty that reflects the enthalpic cost of cysteine deprotonation accompanying thiolate ligation of the metal ions. These data indicate that Pb(2+) binding to both apo MT-3 and Zn7MT-3 is thermodynamically favourable, and implicate MT-3 in neuronal lead biochemistry.

Structural Evolution Following Spinodal Decomposition of the Pseudoternary Compound (Pb0.3Sn0.1Ge0.6)Te

NASA Astrophysics Data System (ADS)

Dado, Boaz; Gelbstein, Yaniv; Mogilansky, Dimitri; Ezersky, Vladimir; Dariel, Moshe P.

2010-09-01

Pseudoternary (Ge,Sn,Pb)Te compounds display favorable thermoelectric properties. Spinodal decomposition in the quasiternary (Ge,Sn,Pb)Te system is at the origin of a wide solubility gap at low Sn concentrations. The structural evolution of the spinodal decomposition was investigated as a function of aging time at 500°C, using x-ray diffraction, electron microscopy, and scanning electron microscopy. The evolution of the structure at 500°C consists initially of a short diffusion-controlled demixing stage into Pb- and Ge-rich coherent areas, with compositions corresponding to the inflection points of the free-energy curve. The Pb-rich areas adopt configurations associated with the directions of the soft elastic moduli of the cubic compound. Both the Pb- and Ge-rich areas are supersaturated and undergo in a second stage a nucleation and growth process and give rise to a biphased structure with equilibrium compositions corresponding to the boundaries of the miscibility gap. The resulting Pb-rich areas display a relatively stable microstructure suggesting the presence of long-range interactions between the Pb-rich precipitates in the Ge-rich matrix.

Fourier Thermal Analysis of the Eutectic Formed in Pb-Sn Alloys

NASA Astrophysics Data System (ADS)

Cruz, H.; Ramírez-Argaez, M.; Juarez, A.; Garcia, A.; González-Rivera, C.

2009-06-01

The effect of the presence of two different primary phases on the microstructural characteristics and solidification kinetics of Pb-Sn eutectic was analyzed using Fourier thermal analysis method (FTA) and microstructural characterization. Three Pb-Sn alloys, a hypoeutectic, an eutectic, and a hypereutectic alloy, were melted in an electric furnace under an argon atmosphere and poured into sand molds. Cooling curves were obtained and numerically processed using FTA. Microstructural observations of the probes indicate a lamellar morphology for the eutectic microconstituent of the hypereutectic alloy; the eutectic alloy shows the presence of both lamellar and anomalous eutectic and the hypoeutectic alloy shows only the presence of anomalous eutectic. FTA results indicate that in the case of the probes showing the presence of anomalous eutectic, there is a primary eutectic formed during recalescence at high undercooling and a secondary eutectic yielded at low undercooling at the eutectic plateau temperature. This result shows that the cause behind the observed differences in the eutectic morphologies of the experimental alloys lies on the nucleating ability of the primary phase available as a potential substrate for nucleation of the eutectic microconstituent.

Mineralogical, textural, sulfur and lead isotope constraints on the origin of Ag-Pb-Zn mineralization at Bianjiadayuan, Inner Mongolia, NE China

NASA Astrophysics Data System (ADS)

Zhai, Degao; Liu, Jiajun; Cook, Nigel J.; Wang, Xilong; Yang, Yongqiang; Zhang, Anli; Jiao, Yingchun

2018-04-01

The Bianjiadayuan Ag-Pb-Zn deposit (4.81 Mt. @157.4 g/t Ag and 3.94% Pb + Zn) is located in the Great Hinggan Range Pb-Zn-Ag-Cu-Mo-Sn-Fe polymetallic metallogenic belt, NE China. Vein type Pb-Zn-Ag ore bodies are primarily hosted by slate, adjacent to a Sn ± Cu ± Mo mineralized porphyry intrusion. The deposit is characterized by silver-rich ores with Ag grades up to 3000 g/t. Four primary paragenetic sequences are recognized: (I) arsenopyrite + pyrite + quartz, (II) main sulfide + quartz, (III) silver-bearing sulfosalt + quartz, and (IV) boulangerite + calcite. A subsequent supergene oxidation stage has also been identified. Hydrothermal alteration consists of an early episode of silicification, two intermediate episodes (propylitic and phyllic), and a late argillic episode. Silver mineralization primarily belongs to the late paragenetic sequence III. Freibergite is the dominant and most important Ag-mineral in the deposit. Detailed ore mineralogy of Bianjiadayuan freibergite reveals evidence of chemical heterogeneity down to the microscale. Silver-rich sulfosalts in the late paragenetic sequence III are largely derived from a series of retrograde and solid-state reactions that redistribute Ag via decomposition and exsolution during cooling, illustrating that documentation of post-mineralization processes is essential for understanding silver ore formation. Sulfur and lead isotope compositions of sulfides, and comparison with those of local various geological units, indicate that the ore-forming fluids, lead, and other metals have a magmatic origin, suggesting a close genetic association between the studied Ag-Pb-Zn veins and the local granitic intrusion. Fluid cooling coupled with decreases in fO2 and fS2 are the factors inferred to have led to a decrease of silver solubility in the hydrothermal fluid, and successively promoted extensive Ag deposition.

Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals.

PubMed

Zhao, Li-Dong; Lo, Shih-Han; Zhang, Yongsheng; Sun, Hui; Tan, Gangjian; Uher, Ctirad; Wolverton, C; Dravid, Vinayak P; Kanatzidis, Mercouri G

2014-04-17

The thermoelectric effect enables direct and reversible conversion between thermal and electrical energy, and provides a viable route for power generation from waste heat. The efficiency of thermoelectric materials is dictated by the dimensionless figure of merit, ZT (where Z is the figure of merit and T is absolute temperature), which governs the Carnot efficiency for heat conversion. Enhancements above the generally high threshold value of 2.5 have important implications for commercial deployment, especially for compounds free of Pb and Te. Here we report an unprecedented ZT of 2.6 ± 0.3 at 923 K, realized in SnSe single crystals measured along the b axis of the room-temperature orthorhombic unit cell. This material also shows a high ZT of 2.3 ± 0.3 along the c axis but a significantly reduced ZT of 0.8 ± 0.2 along the a axis. We attribute the remarkably high ZT along the b axis to the intrinsically ultralow lattice thermal conductivity in SnSe. The layered structure of SnSe derives from a distorted rock-salt structure, and features anomalously high Grüneisen parameters, which reflect the anharmonic and anisotropic bonding. We attribute the exceptionally low lattice thermal conductivity (0.23 ± 0.03 W m(-1) K(-1) at 973 K) in SnSe to the anharmonicity. These findings highlight alternative strategies to nanostructuring for achieving high thermoelectric performance.

Temperature dependence of the symmetry energy and neutron skins in Ni, Sn, and Pb isotopic chains

NASA Astrophysics Data System (ADS)

Antonov, A. N.; Kadrev, D. N.; Gaidarov, M. K.; Sarriguren, P.; de Guerra, E. Moya

2017-02-01

The temperature dependence of the symmetry energy for isotopic chains of even-even Ni, Sn, and Pb nuclei is investigated in the framework of the local density approximation (LDA). The Skyrme energy density functional with two Skyrme-class effective interactions, SkM* and SLy4, is used in the calculations. The temperature-dependent proton and neutron densities are calculated through the hfbtho code that solves the nuclear Skyrme-Hartree-Fock-Bogoliubov problem by using the cylindrical transformed deformed harmonic-oscillator basis. In addition, two other density distributions of 208Pb, namely the Fermi-type density determined within the extended Thomas-Fermi (TF) method and symmetrized-Fermi local density obtained within the rigorous density functional approach, are used. The kinetic energy densities are calculated either by the hfbtho code or, for a comparison, by the extended TF method up to second order in temperature (with T2 term). Alternative ways to calculate the symmetry energy coefficient within the LDA are proposed. The results for the thermal evolution of the symmetry energy coefficient in the interval T =0 -4 MeV show that its values decrease with temperature. The temperature dependence of the neutron and proton root-mean-square radii and corresponding neutron skin thickness is also investigated, showing that the effect of temperature leads mainly to a substantial increase of the neutron radii and skins, especially in the more neutron-rich nuclei, a feature that may have consequences on astrophysical processes and neutron stars.

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

2013-10-08

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb 1-xGe xTe and Pb 1-xSn xTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pbmore » neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.« less

High temperature neutron powder diffraction study of the Cu12Sb4S13 and Cu4Sn7S16 phases

NASA Astrophysics Data System (ADS)

Lemoine, Pierric; Bourgès, Cédric; Barbier, Tristan; Nassif, Vivian; Cordier, Stéphane; Guilmeau, Emmanuel

2017-03-01

Ternary copper-containing sulfides Cu12Sb4S13 and Cu4Sn7S16 have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu12Sb4S13 and Cu4Sn7S16 phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu12Sb4S13 decomposes above ≈792 K into Cu3SbS3, and (ii) Cu4Sn7S16 decomposes above ≈891 K into Sn2S3 and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu3SnS4 stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu12Sb4S13 are in fair agreement with recent published data, the decomposition behavior of Cu4Sn7S16 differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu4Sn7S16 and tetrahedrite Cu12Sb4S13 phases at 300 K, and for the high temperature form of skinnerite Cu3SbS3 at 843 K.

High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter.

PubMed

Kim, Jeehwan; Hiroi, Homare; Todorov, Teodor K; Gunawan, Oki; Kuwahara, Masaru; Gokmen, Tayfun; Nair, Dhruv; Hopstaken, Marinus; Shin, Byungha; Lee, Yun Seog; Wang, Wei; Sugimoto, Hiroki; Mitzi, David B

2014-11-26

High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Classification of Broken Hill-Type Pb-Zn-Ag Deposits: A Refinement

NASA Astrophysics Data System (ADS)

Spry, P. G.; Teale, G. S.; Steadman, J. A.

2009-05-01

Broken Hill Hill-type Pb-Zn-Ag (BHT) deposits constitute some of the largest ore deposits in the world. The Broken Hill deposit is the largest accumulation of Pb, Zn, and Ag on Earth and the Cannington deposit is currently the largest silver deposit. Characteristic features of BHT deposits include: 1. high Pb+Zn+Ag values with Pb > Zn; 2. Metamorphism to amphibolite-granulite facies; 3. Paleo-to Mesoprotoerozoic clastic metasedimentary host rocks; 4. Sulfides that are spatially associated with bimodal (felsic and mafic) volcanic rocks, and stratabound gahnite- and garnet-bearing rocks and iron formations, 5. Stacked orebodies with characteristic Pb:Zn:Ag ratios and skarn-like Fe-Mn-Ca-F gangue assemblages, and the presence of Cu, Au, Bi, As, and Sb; and 6. Sulfur-poor assemblages. Broken Hill (Australia) has a prominent footwall feeder zone whereas other BHT deposits have less obvious alteration zones (footwall garnet spotting and stratabound alteration haloes). Deposits previously regarded in the literature as BHT deposits are Broken Hill, Cannington, Oonagalabie, Menninie Dam, and Pegmont (Australia), Broken Hill, Swartberg, Big Syncline, and Gamsberg (South Africa), Zinkgruvan (Sweden), Sullivan, Cottonbelt, and Foster River (Canada), and Boquira (Brazil). Of these deposits, only the Broken Hill (Australia, South Africa), Pinnacles, Cannington, Pegmont, and Swartberg deposits are BHT deposits. Another BHT deposit includes the Green Parrot deposit, Jervois Ranges (Northern Territory). The Foster River, Gamsberg, and Sullivan deposits are considered to be "SEDEX deposits with BHT affinities", and the Oonagalabie, Green Mountain (Colorado), and Zinkgruvan are "VMS deposits with BHT affinities". In the Broken Hill area (Australia), Corruga-type Pb-Zn-Ag deposits occur in calc-silicate rocks and possess some BHT characteristics; the Big Syncline, Cottonbelt, Menninie Dam, and Saxberget deposits are Corruga-type deposits. SEDEX deposits with BHT affinities, VMS

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

High Pressure Properties of a Ba-Cu-Zn-P Clathrate-I

DOE PAGES

Dolyniuk, Juli -Anna; Kovnir, Kirill

2016-08-12

Here, the high pressure properties of the novel tetrel-free clathrate, Ba 8Cu 13.1Zn 3.3P 29.6, were investigated using synchrotron powder X-ray diffraction. The pressure was applied using a diamond anvil cell. No structural transitions or decomposition were detected in the studied pressure range of 0.1–7 GPa. The calculated bulk modulus for Ba 8Cu 13.1Zn 3.3P 29.6 using a third-order Birch-Murnaghan equation of state is 65(6) GPa at 300 K. This bulk modulus is comparable to the bulk moduli of Ge- and Sn-based clathrates, like A 8Ga 16Ge 30 (A = Sr, Ba) and Sn 19.3Cu 4.7P 22I 8, but lowermore » than those for the transition metal-containing silicon-based clathrates, Ba 8 T xSi46–x, T = Ni, Cu; 3 ≤ x ≤ 5.« less

K2 ZnSn3 Se8 : A Non-Centrosymmetric Zinc Selenidostannate(IV) Featuring Interesting Covalently Bonded [ZnSn3 Se8 ]2- Layer and Exhibiting Intriguing Second Harmonic Generation Activity.

PubMed

Zhou, Molin; Jiang, Xingxing; Yang, Yi; Guo, Yangwu; Lin, Zheshuai; Yao, JJiyong; Wu, Yicheng

2017-06-19

Non-centrosymmetric zinc selenidostannate(IV) K 2 ZnSn 3 Se 8 was synthesized. It features interesting covalently bonded [ZnSn 3 Se 8 ] 2- layers with K + cations filling in the interlayer voids. The phonon spectrum was calculated to clarify its structural stability. Based on the X-ray diffraction data along with the Raman spectrum, the major bonding features of the title compound were identified. According to the UV/vis-NIR spectroscopy, K 2 ZnSn 3 Se 8 possesses a typical direct band gap of 2.10 eV, which is in good agreement with the band structure calculations. Moreover, our experimental measurements and detailed theoretical calculations reveal that K 2 ZnSn 3 Se 8 is a new phase-matchable nonlinear optical material with a powder second harmonic generation (SHG) signal about 0.6 times of that of AgGaS 2 . © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced temperature stability and quality factor with Hf substitution for Sn and MnO2 doping of (Ba0.97Ca0.03)(Ti0.96Sn0.04)O3 lead-free piezoelectric ceramics with high Curie temperature

NASA Astrophysics Data System (ADS)

Tsai, Cheng-Che; Chao, Wei-Hsiang; Chu, Sheng-Yuan; Hong, Cheng-Shong; Weng, Chung-Ming; Su, Hsiu-Hsien

2016-12-01

In this work, the process of two-stage modifications for (Ba0.97Ca0.03)(Ti0.96Sn0.04-xHfx)O3 (BCTS4-100xH100x) ceramics was studied. The trade-off composition was obtained by Hf substitution for Sn and MnO2 doping (two-stage modification) which improves the temperature stability and piezoelectric properties. The phase structure ratio, microstructure, and dielectric, piezoelectric, ferroelectric, and temperature stability properties were systematically investigated. Results showed that BCTS4-100xH100x piezoelectric ceramics with x=0.035 had a relatively high Curie temperature (TC) of about 112 °C, a piezoelectric charge constant (d33) of 313 pC/N, an electromechanical coupling factor (kp) of 0.49, a mechanical quality factor (Qm) of 122, and a remnant polarization (Pr) of 19 μ C /cm2 . In addition, the temperature stability of the resonant frequency (fr), kp, and aging d33 could be tuned via Hf content. Good piezoelectric temperature stability (up to 110 °C) was found with x =0.035. BCTS0.5H3.5 + a mol% Mn (BCTSH + a Mn) piezoelectric ceramics with a = 2 had a high TC of about 123 °C, kp ˜ 0.39, d33 ˜ 230 pC/N, Qm ˜ 341, and high temperature stability due to the produced oxygen vacancies. This mechanism can be depicted using the complex impedance analysis associated with a valence compensation model on electric properties. Two-stage modification for lead-free (Ba0.97Ca0.03)(Ti0.96Sn0.04)O3 ceramics suitably adjusts the compositions for applications in piezoelectric motors and actuators.

Simultaneous Stripping Detection of Pb(II), Cd(II) and Zn(II) Using a Bimetallic Hg-Bi/Single-Walled Carbon Nanotubes Composite Electrode

PubMed Central

Ouyang, Ruizhuo; Zhu, Zhenqian; Tatum, Clarissa E.; Chambers, James Q.; Xue, Zi-Ling

2011-01-01

A new, sensitive platform for the simultaneous electrochemical assay of Zn(II), Cd(II) and Pb(II) in aqueous solution has been developed. The platform is based on a new bimetallic Hg-Bi/single-walled carbon nanotubes (SWNTs) composite modified glassy carbon electrode (GCE), demonstrating remarkably improved performance for the anodic stripping assay of Zn(II), Cd(II) and Pb(II). The synergistic effect of Hg and Bi as well as the enlarged, activated surface and good electrical conductivity of SWNTs on GCE contribute to the enhanced activity of the proposed electrode. The analytical curves for Zn(II), Cd(II) an Pb(II) cover two linear ranges varying from 0.5 to 11 μg L-1 and 10 to 130 μg L-1 with correlation coefficients higher than 0.992. The limits of detection for Zn(II), Cd(II) are lower than 2 μg L-1 (S/N = 3). For Pb(II), moreover, there is another lower, linear range from 5 to 1100 ng L-1 with a coefficient of 0.987 and a detection limit of 0.12 ng L-1. By using the standard addition method, Zn(II), Cd(II) and Pb(II) ions in river samples were successfully determined. These results suggest that the proposed method can be applied as a simple, efficient alternative for the simultaneous monitoring of heavy metals in water samples. In addition, this method demonstrates the powerful application of carbon nanotubes in electrochemical analysis of heavy metals. PMID:21660117

Bioleaching mechanism of Zn, Pb, In, Ag, Cd and As from Pb/Zn smelting slag by autotrophic bacteria.

PubMed

Wang, Jia; Huang, Qifei; Li, Ting; Xin, Baoping; Chen, Shi; Guo, Xingming; Liu, Changhao; Li, Yuping

2015-08-15

A few studies have focused on release of valuable/toxic metals from Pb/Zn smelting slag by heterotrophic bioleaching using expensive yeast extract as an energy source. The high leaching cost greatly limits the practical potential of the method. In this work, autotrophic bioleaching using cheap sulfur or/and pyrite as energy matter was firstly applied to tackle the smelting slag and the bioleaching mechanisms were explained. The results indicated autotrophic bioleaching can solubilize valuable/toxic metals from slag, yielding maximum extraction efficiencies of 90% for Zn, 86% for Cd and 71% for In, although the extraction efficiencies of Pb, As and Ag were poor. The bioleaching performance of Zn, Cd and Pb was independent of leaching system, and leaching mechanism was acid dissolution. A maximum efficiency of 25% for As was achieved by acid dissolution in sulfursulfur oxidizing bacteria (S-SOB), but the formation of FeAsO4 reduced extraction efficiency in mixed energy source - mixed culture (MS-MC). Combined works of acid dissolution and Fe(3+) oxidation in MS-MC was responsible for the highest extraction efficiency of 71% for In. Ag was present in the slag as refractory AgPb4(AsO4)3 and AgFe2S3, so extraction did not occur. Copyright © 2015 Elsevier Ltd. All rights reserved.

Quantifying point defects in Cu 2 ZnSn(S,Se) 4 thin films using resonant x-ray diffraction

DOE PAGES

Stone, Kevin H.; Christensen, Steven T.; Harvey, Steven P.; ...

2016-10-17

Cu 2ZnSn(S,Se)4 is an interesting, earth abundant photovoltaic material, but has suffered from low open circuit voltage. To better understand the film structure, we have measured resonant x-ray diffraction across the Cu and Zn K-edges for the device quality thin films of Cu 2ZnSnS4 (8.6% efficiency) and Cu 2ZnSn(S,Se)4 (3.5% efficiency). This approach allows for the confirmation of the underlying kesterite structure and quantification of the concentration of point defects and vacancies on the Cu, Zn, and Sn sublattices. Rietveld refinement of powder diffraction data collected at multiple energies is used to determine that there exists a high level ofmore » Cu Zn and Zn Cu defects on the 2c and 2d Wyckoff positions. We observe a significantly lower concentration of Zn Sn defects and Cu or Zn vacancies.« less

Spray-painted binder-free SnSe electrodes for high-performance energy-storage devices.

PubMed

Wang, Xianfu; Liu, Bin; Xiang, Qingyi; Wang, Qiufan; Hou, Xiaojuan; Chen, Di; Shen, Guozhen

2014-01-01

SnSe nanocrystal electrodes on three-dimensional (3D) carbon fabric and Au-coated polyethylene terephthalate (PET) wafer have been prepared by a simple spray-painting process and were further investigated as binder-free active-electrodes for Lithium-ion batteries (LIBs) and flexible stacked all-solid-state supercapacitors. The as-painted SnSe nanocrystals/carbon fabric electrodes exhibit an outstanding capacity of 676 mAh g(-1) after 80 cycles at a current density of 200 mA g(-1) and a considerable high-rate capability in lithium storage because of the excellent ion transport from the electrolyte to the active materials and the efficient charge transport between current collector and electrode materials. The binder-free electrodes also provide a larger electrochemical active surface compared with electrodes containing binders, which leads to the enhanced capacities of energy-storage devices. A flexible stacked all-solid-state supercapacitor based on the SnSe nanocrystals on Au-coated PET wafers shows high capacitance reversibility with little performance degradation at different current densities after 2200 charge-discharge cycles and even when bent. This allows for many potential applications in facile, cost-effective, spray-paintable, and flexible energy-storage devices. The results indicate that the fabrication of binder-free electrodes by a spray painting process is an interesting direction for the preparation of high-performance energy-storage devices. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Bismuth Alloys as Lead-Free Alternatives for Interconnects in High-Temperature Electronics

NASA Astrophysics Data System (ADS)

Mallampati, Sandeep

Predominant high melting point solders for high-temperature electronics (operating temperatures from 200 to 250°C) are Pb-based which are being banned from usage due to their toxic nature. In this study, high bismuth alloy compositions (Bi-14Cu-8Sn, Bi-20Sb-10Cu, Bi-15Sb-10Cu and Bi-10Sb-10Cu) were designed, cast, and characterized to understand their potential as replacements. The desirable aspect of Bi is its high melting temperature, which is 271°C. Alloying elements Sn, Sb and Cu were added to improve some of its properties such as thermal conductivity, plasticity, and reactivity with Cu and Ni surface. Metallographic sectioning and microstructure analysis were performed on the bulk alloys to compare the evolution of phases predicted from equilibrium phase diagrams. Reflow processes were developed to make die-attach samples out of the proposed alloys and die-shear testing was carried out to characterize mechanical integrity of the joint. Thermal shock between -55°C to 200°C and high temperature storage at 200°C were performed on the assembled die-attach samples to study microstructure evolution and mechanical behavior of the reflowed alloys under accelerated testing conditions. In addition, heat dissipation capabilities, using flash diffusivity, were measured on the bulk alloys and also on the die-attach assembly. Finally, tensile testing was performed on the dogbone specimens to identify the potential for plastic deformation and electron backscatter diffraction (EBSD) analysis was used to study the grain orientations on the fracture surfaces and their influence on the crack propagation. Bi-14Cu-8Sn has formed BiNi by on the die backside metallization and the reaction with Cu was poor. This has resulted in weaker substrate side interface. It was observed that Bi-Sb alloys have strong reactivity with Ni (forming Bi3Ni, BiNi and NiSb intermetallic phases), and with Cu (forming Cu2Sb, Cu4Sb). Spallation was observed in NiSb interfacial intermetallic layer and

Photocatalytic Degradation of Isopropanol Over PbSnO3Nanostructures Under Visible Light Irradiation

PubMed Central

2009-01-01

Nanostructured PbSnO3photocatalysts with particulate and tubular morphologies have been synthesized from a simple hydrothermal process. As-prepared samples were characterized by X-ray diffraction, Brunauer–Emmet–Teller surface area, transmission electron microscopy, and diffraction spectroscopy. The photoactivities of the PbSnO3nanostructures for isopropanol (IPA) degradation under visible light irradiation were investigated systematically, and the results revealed that these nanostructures show much higher photocatalytic properties than bulk PbSnO3material. The possible growth mechanism of tubular PbSnO3catalyst was also investigated briefly. PMID:20596379

Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

NASA Astrophysics Data System (ADS)

Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

2015-09-01

The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

Reference Correlation for the Density and Viscosity of Eutectic Liquid Alloys Al+Si, Pb+Bi, and Pb+Sn

NASA Astrophysics Data System (ADS)

Assael, M. J.; Mihailidou, E. K.; Brillo, J.; Stankus, S. V.; Wu, J. T.; Wakeham, W. A.

2012-09-01

In this paper, the available experimental data for the density and viscosity of eutectic liquid alloys Al+Si, Pb+Bi, and Pb+Sn have been critically examined with the intention of establishing a reference standard representation of both density and viscosity. All experimental data have been categorized as primary or secondary according to the quality of measurement, the technique employed, and the presentation of the data, as specified by a series of carefully defined criteria. The proposed standard reference correlations for the density of liquid Al+Si, Pb+Bi, and Pb+Sn are, respectively, characterized by deviations of 2.0%, 2.9%, and 0.5% at the 95% confidence level. The standard reference correlations for the viscosity of liquid Al+Si, Pb+Bi, and Pb+Sn are, respectively, characterized by deviations of 7.7%, 14.2%, and 12.4% at the 95% confidence level.

Cu-Sn Intermetallic Compound Joints for High-Temperature Power Electronics Applications

NASA Astrophysics Data System (ADS)

Lee, Byung-Suk; Yoon, Jeong-Won

2018-01-01

Cu-Sn solid-liquid interdiffusion (SLID) bonded joints were fabricated using a Sn-Cu solder paste and Cu for high-temperature power electronics applications. The interfacial reaction behaviors and the mechanical properties of Cu6Sn5 and Cu3Sn SLID-bonded joints were compared. The intermetallic compounds formed at the interfaces in the Cu-Sn SLID-bonded joints significantly affected the die shear strength of the joint. In terms of thermal and mechanical properties, the Cu3Sn SLID-bonded joint was superior to the conventional solder and the Cu6Sn5 SLID-bonded joints.

Line length dependence of threshold current density and driving force in eutectic SnPb and SnAgCu solder electromigration

NASA Astrophysics Data System (ADS)

Yoon, Min-Seung; Ko, Min-Ku; Kim, Bit-Na; Kim, Byung-Joon; Park, Yong-Bae; Joo, Young-Chang

2008-04-01

The relationship between the threshold current density and the critical line length in eutectic SnPb and SnAgCu electromigrations were examined using solder lines with the various lengths ranging from 100to1000μm. When the electron wind-force was balanced by the back-stress gradient force, the net flux of electromigration is zero, at which the current density and line length are defined as the threshold current density and the critical length, respectively. It was found that in SnAgCu electromigration, the 1/L dependence on the threshold current density showed good agreement, whereas the threshold current densities of the eutectic SnPb deviated from the 1/L dependence. The balance between the electron wind-force and the back-stress gradient force was the main factor determining the threshold product of SnAgCu electromigration. On the other hand, in the case of eutectic SnPb, the chemical driving force is contributed as a back-flux force in addition to the back-stress gradient force. The existence of the chemical driving force was caused by the nonequilibrium Pb concentration inside the Pb-rich phases between the cathode and anode during the electromigration procedure.

High-Energy Faceted SnO₂-Coated TiO₂ Nanobelt Heterostructure for Near-Ambient Temperature-Responsive Ethanol Sensor.

PubMed

Chen, Guohui; Ji, Shaozheng; Li, Haidong; Kang, Xueliang; Chang, Sujie; Wang, Yana; Yu, Guangwei; Lu, Jianren; Claverie, Jerome; Sang, Yuanhua; Liu, Hong

2015-11-11

A SnO2 gas sensor was prepared by a two-step oxidation process whereby a Sn(II) precursor was partially oxidized by a hydrothermal process and the resulting Sn3O4 nanoplates were thermally oxidized to yield SnO2 nanoplates. The SnO2 sensor was selective and responsive toward ethanol at a temperature as low as 43 °C. This low sensing temperature stems from the rapid charge transport within SnO2 and from the presence of high-energy (001) facets available for oxygen chemisorption. SnO2/TiO2 nanobelt heterostructures were fabricated by a similar two-step process in which TiO2 nanobelts acted as support for the epitaxial growth of intermediate Sn3O4. At temperatures ranging from 43 to 276 °C, the response of these branched nanobelts is more than double the response of SnO2 for ethanol detection. Our observations demonstrate the potential of low-cost SnO2-based sensors with controlled morphology and reactive facets for detecting gases around room temperature.

High-mobility low-temperature ZnO transistors with low-voltage operation

NASA Astrophysics Data System (ADS)

Bong, Hyojin; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Beom Joon; Cho, Jeong Ho; Cho, Kilwon

2010-05-01

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm2/V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

Selective Chemical Conversion of Sugars in Aqueous Solutions without Alkali to Lactic Acid Over a Zn-Sn-Beta Lewis Acid-Base Catalyst

NASA Astrophysics Data System (ADS)

Dong, Wenjie; Shen, Zheng; Peng, Boyu; Gu, Minyan; Zhou, Xuefei; Xiang, Bo; Zhang, Yalei

2016-05-01

Lactic acid is an important platform molecule in the synthesis of a wide range of chemicals. However, in aqueous solutions without alkali, its efficient preparation via the direct catalysis of sugars is hindered by a side dehydration reaction to 5-hydroxymethylfurfural due to Brønsted acid, which originates from organic acids. Herein, we report that a previously unappreciated combination of common two metal mixed catalyst (Zn-Sn-Beta) prepared via solid-state ion exchange synergistically promoted this reaction. In water without a base, a conversion exceeding 99% for sucrose with a lactic acid yield of 54% was achieved within 2 hours at 190 °C under ambient air pressure. Studies of the acid and base properties of the Zn-Sn-Beta zeolite suggest that the introduction of Zn into the Sn-Beta zeolite sequentially enhanced both the Lewis acid and base sites, and the base sites inhibited a series of side reactions related to fructose dehydration to 5-hydroxymethylfurfural and its subsequent decomposition.

Effect of replacing Sn4+ ions by Zn2+ ions on structural, optical and magnetic properties of SnO2 nanoparticles

NASA Astrophysics Data System (ADS)

Selvi, E. Thamarai; Sundar, S. Meenakshi

2017-05-01

This paper highlights on the consequence of replacing tetravalent Sn4+ ions of the SnO2 by divalent Zn2+ ions on their structural, optical, and magnetic properties. Samples of Sn1- x Zn x O2 with x = 0, 0.01, 0.02, 0.03, and 0.04 were synthesized using microwave irradiated solvothermal process. The X-ray powder diffraction patterns reveal the rutile tetragonal phase of all doped SnO2 samples with no secondary phases. The transmission electron microscopy results show the formation of spherical nanoparticles of size 10-30 nm. Morphological changes were observed by scanning electron microscopy. The functional groups were investigated using Fourier transform infrared spectroscopy studies. Optical studies were carried by UV-Vis spectroscopy and fluorescence spectroscopy. Electron paramagnetic resonance was used to calculate the Lande splitting factor ` g'. The magnetic properties using vibrating sample magnetometer exhibit room temperature ferromagnetism for all the samples.

Quantum magnetotransport and de Haas–van Alphen measurements in the three-dimensional Dirac semimetal Pb0.83Sn0.17Se

NASA Astrophysics Data System (ADS)

Orbanić, F.; Novak, M.; Pleslić, S.; Kokanović, I.

2018-03-01

Magnetoresistance (MR), Hall resistance and magnetization of the Pb0.83Sn0.17Se crystals have been measured in magnetic field up to 15 T and 5 T, respectively, and temperatures from 1.7 K up to 300 K. A large linear and temperature dependent MR is observed in magnetic field up to 15 T. The de Haas–van Alphen (dHvA) and Shubnikov de Haas effects (SdH) of Pb0.83Sn0.17Se crystals have been clearly seen in the temperature range from 30 K down to 1.7 K and magnetic field as low as 2 T. The dHvA and SdH oscillations reveal single frequency of around 8 T which confirms the existence of a single Fermi surface cross section. Influence of isothermal annealing of Pb0.83Sn0.17Se crystals in Se vapours has been investigated. By increasing the annealing temperature from 433 °C up to 440 °C, transition from n to p-type conductivity has been observed. The dHvA and SdH effects clearly reflect the existence of a nontrivial Berry’s phase owing to the linear band dispersion which is the signature of a three-dimensional Dirac fermion in the Pb0.83Sn0.17Se crystals [1].

Fabrication and characterization of SnO2/ZnO gas sensors for detecting toluene gas.

PubMed

Min, Byung-Sam; Park, Young-Ho; Lee, Chang-Seop

2014-11-01

This study investigates the use of SnO2, ZnO, Ag, Au, Cu, In, Pd, Ru and carbon black to improve the sensitivity of a gas sensor for detecting toluene gas. Metal-SnO2/ZnO thick films were screen-printed onto Al2O3 substrates with platinum electrodes. The physico-chemical properties of the sensor materials were characterized using SEM/EDS, XRD, and BET analyses. Measuring the electrical resistance of each sensor as a function of the gas concentration determined the sensing characteristics. The sensors were tested using toluene, benzene, xylene, ethanol, methanol, ammonia and trimethylamine vapors with concentrations of 1-2000 ppm. The gas sensing properties of metal-SnO2/ZnO thick films depended on the content and variety of metals and the content of carbon black. The optimum condition of sensor material for toluene gas detection is operation temperature 300 degrees C and when metal catalyst Cu and carbon black were added. The best sensitivity and selectivity for toluene gas at 300 degrees C resulted from doping with 5 wt.% carbon black, 1 wt.% Cu and 20 wt.% ZnO to SnO2.

Spherical crystals of Pb 1 - xSn xTe grown in microgravity

NASA Astrophysics Data System (ADS)

Kinoshita, Kyoichi; Yamada, Tomoaki

1996-07-01

Pb 1- xSn xTe spherical crystals were unintentionally obtained along with a cylindrical Pb 1 - xSn xTe crystal grown during the {SL-J}/{FMPT} mission on board the space shuttle "Endeavor". About 25 spherical crystals ranged from 0.5 to 11 mm in diameter. Melt leaked from the melt reservoir into the spring that plays the role of pushing the melt toward a seed crystal and eliminating free surface areas of the melt. Because of the surface tension of the melt, spherical melt drops formed in the hollow of the spring, then solidified into spherical crystals during the cooling process. Some of the crystals had lower dislocation densities, in the order of 10 4 cm -2, two orders smaller than those of terrestrially grown crystals from a melt. The experiment showed a way of stably positioning a large volume of liquid in microgravity without touching the crucible wall and a way of reducing crystalline defects by such growth.

Application of Taguchi approach to optimize the sol-gel process of the quaternary Cu2ZnSnS4 with good optical properties

NASA Astrophysics Data System (ADS)

Nkuissi Tchognia, Joël Hervé; Hartiti, Bouchaib; Ridah, Abderraouf; Ndjaka, Jean-Marie; Thevenin, Philippe

2016-07-01

Present research deals with the optimal deposition parameters configuration for the synthesis of Cu2ZnSnS4 (CZTS) thin films using the sol-gel method associated to spin coating on ordinary glass substrates without sulfurization. The Taguchi design with a L9 (34) orthogonal array, a signal-to-noise (S/N) ratio and an analysis of variance (ANOVA) are used to optimize the performance characteristic (optical band gap) of CZTS thin films. Four deposition parameters called factors namely the annealing temperature, the annealing time, the ratios Cu/(Zn + Sn) and Zn/Sn were chosen. To conduct the tests using the Taguchi method, three levels were chosen for each factor. The effects of the deposition parameters on structural and optical properties are studied. The determination of the most significant factors of the deposition process on optical properties of as-prepared films is also done. The results showed that the significant parameters are Zn/Sn ratio and the annealing temperature by applying the Taguchi method.

Enhancement of Thermoelectric Performances in a Topological Crystal Insulator Pb0.7Sn0.3Se via Weak Perturbation of the Topological State and Chemical Potential Tuning by Chlorine Doping.

PubMed

Lin, Chan-Chieh; Kim, Gareoung; Ginting, Dianta; Ahn, Kyunghan; Rhyee, Jong-Soo

2018-04-04

Topological insulators generally share commonalities with good thermoelectric (TE) materials because of their narrow band gaps and heavy constituent elements. Here, we propose that a topological crystalline insulator (TCI) could exhibit a high TE performance by breaking its crystalline symmetry and tuning the chemical potential by elemental doping. As a candidate material, we investigate the TE properties of the Cl-doped TCI Pb 0.7 Sn 0.3 Se. The infrared absorption spectra reveal that the band gap is increased from 0.055 eV for Pb 0.7 Sn 0.3 Se to 0.075 eV for Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 , confirming that the Cl doping can break the crystalline mirror symmetry of a TCI Pb 0.7 Sn 0.3 Se and thereby enlarge its bulk electronic band gap. The topological band inversion is confirmed by the extended X-ray absorption fine structure spectroscopy, which shows that the TCI state is weakened in a chlorine x = 0.05-doped compound. The small gap opening and partial linear band dispersion with massless and massive bands may have a high power factor (PF) for high electrical conductivity with an enhancement of the Seebeck coefficient. As a result, Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 shows a considerably enhanced ZT of 0.64 at 823 K, which is about 1200% enhancement in ZT compared with that of the undoped Pb 0.7 Sn 0.3 Se. This work demonstrates that the optimal n-type Cl doping tunes the chemical potential together with breaking the state of the TCI, suppresses the bipolar conduction at high temperatures, and thereby enables the Seebeck coefficient to increase up to 823 K, resulting in a significantly enhanced PF at high temperatures. In addition, the bipolar contribution to thermal conductivity is effectively suppressed for the Cl-doped samples of Pb 0.7 Sn 0.3 Se 1- x Cl x ( x ≥ 0.01). We propose that breaking the crystalline mirror symmetry in TCIs could be a new research direction for exploring high-performance TE materials.

Ferroelectric switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures

NASA Astrophysics Data System (ADS)

Wang, Juan; Salev, Pavel; Grigoriev, Alexei

As a wide-bandgap semiconductor, ZnO has gained substantial interest due to its favorable properties including high electron mobility, strong room-temperature luminescence, etc. The main obstacle of its application is the lack of reproducible and low-resistivity p-type ZnO. P-type doping of ZnO through the interface charge injection, which can be achieved by the polarization switching of ferroelectric films, is a tempting solution. We explored ferroelectric switching behavior of PbZr0.2Ti0.8O3/ZnO/GaN heterostructures epitaxially grown on Sapphire substrates by RF sputtering. The electrical measurements of Pt/PbZr0.2Ti0.8O3/ZnO/GaN ferroelectric-semiconductor capacitors revealed unusual behavior that is a combination of polarization switching and a diode I-V characteristics.

Characteristic of total suspended particulate (TSP) containing Pb and Zn at solid waste landfill

NASA Astrophysics Data System (ADS)

Budihardjo, M. A.; Noveandra, K.; Samadikun, B. P.

2018-05-01

Activities conducted at municipal solid waste landfills (MSWLs) potentially cause air pollution. Heavy vehicles in MSWLs release various pollutants that can have negative impacts for humans. One noticeable pollutant at MSWLs is airborne total suspended particulate (TSP) which may contain heavy metals such as Pb and Zn and can cause disease when inhaled by humans. In this study, TSP from a landfill in Semarang, Indonesia was collected and characterized to quantify the concentration of Pb and Zn. Meteorological factors (i.e. temperature, humidity and wind velocity) and landfill activities were considered as factors affecting pollutant concentrations. TSP was sampled using dust samplers while the concentrations of heavy metals in TSP were analyzed using an Atomic Absorption Spectrophotometer (AAS). Pb concentration ranged from 0.84 to 1.78 µg/m3 while Zn concentration was from 7.87 to 8.76 µg/m3. The levels of Pb were below the threshold specified by the Indonesian Government. Meanwhile, the threshold for Zn has not yet been determined.

Facial development of high performance room temperature NO2 gas sensors based on ZnO nanowalls decorated rGO nanosheets

NASA Astrophysics Data System (ADS)

Liu, Zongyuan; Yu, Lingmin; Guo, Fen; Liu, Sheng; Qi, Lijun; Shan, Minyu; Fan, Xinhui

2017-11-01

A highly sensitive NO2 gas sensor based on ZnO nanowalls decorated rGO nanosheets was fabricated using a thermal reduction and soft solution process. The highly developed interconnected microporous networks of ZnO nanowalls were anchored homogeneously on the surface of reduced graphene oxide (rGO). Sensors fabricated with heterojunction structures achieved a higher response (S = 9.61) and shorter response-recovery (25 s, 15 s) behavior at room temperature to 50 ppm level NO2 effectively in contrast to those sensors based on net ZnO nanowalls or rGO layers. The stability and selectivity of ZnO/rGO heterojunction were carried out. Meanwhile, the effects of humidity on ZnO/rGO heterojunction gas sensor were investigated. The more preferable sensing performance of ZnO/rGO heterojunction to NO2 was discussed. It can be surmised that this NO2 gas sensor has potential for use as a portable room temperature gas sensor.

Anharmonicity and atomic distribution of SnTe and PbTe thermoelectrics

DOE PAGES

Li, C. W.; Ma, J.; Cao, H. B.; ...

2014-12-29

The structure and lattice dynamics of rock-salt thermoelectric materials SnTe and PbTe are investigated with single crystal and powder neutron diffraction, inelastic neutron scattering (INS), and first-principles simulations. Our first-principles calculations of the radial distribution function (RDF) in both SnTe and PbTe show a clear asymmetry in the first nearest-neighbor (1NN) peak, which increases with temperature, in agreement with experimental reports (Ref. 1,2). We show that this peak asymmetry for the 1NN Sn–Te or Pb–Te bond results from large-amplitude anharmonic vibrations (phonons). No atomic off-centering is found in our simulations. In addition, the atomic mean square displacements derived from ourmore » diffraction data reveal stiffer bonding at the anion site, in good agreement with the partial phonon densities of states from INS, and first-principles calculations. In conclusion, these results provide clear evidence for large-amplitude anharmonic phonons associated with the resonant bonding leading to the ferroelectric instability.« less

In situ TEM and analytical STEM studies of ZnO nanotubes with Sn cores and Sn nanodrops

NASA Astrophysics Data System (ADS)

Ortega, Y.; Jäger, W.; Piqueras, J.; Häussler, D.; Fernández, P.

2013-10-01

ZnO nanorods with Sn core regions grown by a thermal evaporation-deposition method from a mixture of SnO2 and ZnS powders as precursors, are used to study the behaviour of liquid metal in the nanotubes' core regions and the formation of liquid metal nanodrops at the tube ends by in situ TEM experiments. The compositions of the core materials and of the nanodrops were assessed by employing HAADF-STEM imaging and spatially resolved EDXS measurements. By applying variable thermal load through changing the electron-beam flux of the electron microscope, melting of the metallic core can be induced and the behaviour of the liquid metal of the nanorods can be monitored locally. Within the nanorod core, melting and reversible thermal expansion and contraction of Sn core material is reproducibly observed. For nanotubes with core material near-tip regions, a nanodrop emerges from the tip upon melting the core material, followed by reabsorption of the melt into the core and re-solidification upon decreasing the heat load, being reminiscent of a ‘soldering nanorod’. The radius of the liquid nanodrop can reach a few tens of nanometres, containing a total volume of 10-20 up to 10-18 l of liquid Sn. In situ TEM confirms that the radius of the nanodrop can be controlled via the thermal load: it increases with increasing temperature and decreases with decreasing temperature. In addition, some phenomena related to structure modifications during extended electron-beam exposure are also described.

Temperature-dependent dielectric and energy-storage properties of Pb(Zr,Sn,Ti)O{sub 3} antiferroelectric bulk ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xuefeng; Liu, Zhen; Xu, Chenhong

2016-05-15

The dielectric and energy-storage properties of Pb{sub 0.99}Nb{sub 0.02}[(Zr{sub 0.60}Sn{sub 0.40}){sub 0.95}Ti{sub 0.05}]{sub 0.98}O{sub 3} (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T{sub 0}, T{sub C}, T{sub 2} are obtained from the dielectric temperature spectrum. At different temperature regions (below T{sub 0}, between T{sub 0} and T{sub C}, and above T{sub C}), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reachmore » their peak values at ∼T{sub 0}. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics.« less

Spectral analysis of Cu 2+: B 2O 3-ZnO-PbO glasses

NASA Astrophysics Data System (ADS)

Lakshminarayana, G.; Buddhudu, S.

2005-11-01

A new series of heavy metal oxide (PbO) based zinc borate glasses in the chemical composition of (95 - x)B 2O 3-5ZnO- xPbO ( x = 10, 15, 20, 25, 30, 35, 40, 45 and 50 mol%) have been prepared to verify their UV filtering performance. Both direct and indirect optical band gaps ( Eopt) have been evaluated for these glasses. For a reference glass of 45B 2O 3-5ZnO-50PbO, refractive indices at different wavelengths are measured and found the results satisfactorily correlated with the theoretical data upon the computation of Cauchy's constants of A = 1.766029949, B = 159531.024 nm 2 and C = -1.078 × 10 10 nm 4. Measurements concerning X-ray diffraction (XRD), FT-IR, differential scanning colorimeter (DSC) profiles have been carried out for this glass. The FT-IR profile has revealed that the glass has both BO 3 and BO 4 units. From DSC thermogram, glass transition temperature ( Tg), crystallization temperature ( Tc) and melting temperature ( Tm) have been located and from them, other related parameters of the glass have also been calculated. Visible absorption spectra of 45B 2O 3-5ZnO-(50 - x)PbO- xCuO ( x = 0. 1, 0.2, 0.5 and 1.0 mol%) have revealed two absorption bands at around 400 nm ( 2B 1g → 2E g) and 780 nm ( 2B 1g → 2B 2g) of Cu 2+ ions, respectively. Emission bands at 422 and 512 nm are found for the 1 mol% CuO doped glass with excitations at 306 and 332 nm.

Highly selective room temperature NO2 gas sensor based on rGO-ZnO composite

NASA Astrophysics Data System (ADS)

Jyoti, Kanaujiya, Neha; Varma, G. D.

2018-05-01

Blending metal oxide nanoparticles with graphene or its derivatives can greatly enhance gas sensing characteristics. In the present work, ZnO nanoparticles have been synthesized via reflux method. Thin films of reduced graphene oxide (rGO) and composite of rGO-ZnO have been fabricated by drop casting method for gas sensing application. The samples have been characterized by X-ray diffraction (XRD) and Field-emission scanning electron microscope (FESEM) for the structural and morphological studies respectively. Sensing measurements have been carried out for the composite film of rGO-ZnO for different concentrations of NO2 ranging from 4 to 100 ppm. Effect of increasing temperature on the sensing performance has also been studied and the rGO-ZnO composite sensor shows maximum percentage response at room temperature. The limit of detection (LOD) for rGO-ZnO composite sensor is 4ppm and it exhibits a high response of 48.4% for 40 ppm NO2 at room temperature. To check the selectivity of the composite sensor, sensor film has been exposed to 40 ppm different gases like CO, NH3, H2S and Cl2 at room temperature and the sensor respond negligibly to these gases. The present work suggests that rGO-ZnO composite material can be a better candidate for fabrication of highly selective room temperature NO2 gas sensor.

Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

NASA Astrophysics Data System (ADS)

Nandur, Abhishek S.

Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (< 2 mum in total film thickness) coupled with fast, low-cost production processes make them an ideal alternative to Si (>15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

Origin and tectonic implications of the Zhaxikang Pb-Zn-Sb-Ag deposit in northern Himalaya: evidence from structures, Re-Os-Pb-S isotopes, and fluid inclusions

NASA Astrophysics Data System (ADS)

Zhou, Qing; Li, Wenchang; Qing, Chengshi; Lai, Yang; Li, Yingxu; Liao, Zhenwen; Wu, Jianyang; Wang, Shengwei; Dong, Lei; Tian, Enyuan

2018-04-01

The Zhaxikang Pb-Zn-Sb-Ag-(Au) deposits, located in the eastern part of northern Himalaya, totally contain more than 1.146 million tonnes (Mt) of Pb, 1.407 Mt of Zn, 0.345 Mt of Sb, and 3 kilotonnes (kt) of Ag. Our field observations suggest that these deposits are controlled by N-S trending and west- and steep-dipping normal faults, suggesting a hydrothermal rather than a syngenetic sedimentary origin. The Pb-Zn-Sb-Ag-(Cu-Au) mineralization formed in the Eocene as indicated by a Re-Os isochron age of 43.1 ± 2.5 Ma. Sulfide minerals have varying initial Pb isotopic compositions, with (206Pb/204Pb)i of 19.04-19.68, (207Pb/204Pb)i of 15.75-15.88, and (208Pb/204Pb)i of 39.66-40.31. Sulfur isotopic values display a narrow δ34S interval of +7.8-+12.2‰. These Pb-S isotopic data suggest that the Zhaxikang sources of Pb and S should be mainly from the coeval felsic magmas and partly from the surrounding Mesozoic strata including metasedimentary rocks and layered felsic volcanic rocks. Fluid inclusion studies indicate that the hydrothermal fluids have medium temperatures (200-336 °C) but varying salinities (1.40-18.25 wt.% NaCl equiv.) with densities of 0.75-0.95 g/cm3, possibly suggesting an evolution mixing between a high salinity fluid, perhaps of magmatic origin, with meteoric water.

Band alignment and p -type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

2017-05-01

Composed of earth-abundant elements, ZnSnN2 is a promising semiconductor for photovoltaic and photoelectrochemical applications. However, basic properties such as the precise value of the band gap and the band alignment to other semiconductors are still unresolved. For instance, reported values for the band gap vary from 1.4 to 2.0 eV. In addition, doping in ZnSnN2 remains largely unexplored. Using density functional theory with the Heyd-Scuseria-Ernzerhof hybrid functional, we investigate the electronic structure of ZnSnN2, its band alignment to GaN and ZnO, and the possibility of p -type doping. We find that the position of the valence-band maximum of ZnSnN2 is 0.39 eV higher than that in GaN, yet the conduction-band minimum is close to that in ZnO, which suggests that achieving p -type conductivity is likely as in GaN, yet it may be difficult to control unintentional n -type conductivity as in ZnO. Among possible p -type dopants, we explore Li, Na, and K substituting on the Zn site. We show that while LiZn is a shallow acceptor, NaZn and KZn are deep acceptors, which we trace back to large local relaxations around the Na and K impurities due to the atomic size mismatches.

Nanocrystal growth and morphology of PbTeSe-ZnSe composite thin films prepared by one-step synthesis method

NASA Astrophysics Data System (ADS)

Sato, Kazuhisa; Abe, Seishi

2016-10-01

The microstructure of polycrystalline PbTe1-xSex-ZnSe composite thin films has been studied by scanning transmission electron microscopy and electron diffraction. The films were prepared by the one-step synthesis method using simultaneous evaporation of PbTe and ZnSe. The nanocrystals of PbTe1-xSex are formed in a ZnSe matrix. Tellurium concentration can be tuned by controlling the PbTe evaporation source temperatures between 753 K and 793 K. Binary PbSe nanocrystals were formed at 753 K, while ternary PbTe1-xSex nanocrystals were formed at 793 K. The nanocrystals grow in a granular shape at the initial stage of film growth, and the morphology changes to nanowire-shape as the film grows, irrespective of the Te concentration. The ternary PbTe1-xSex nanocrystals were composed of two phases with different Te concentration; Te-rich (Se-poor) granular crystals were formed near the bottom half parts of the film and Te-poor (Se-rich) nanowires were formed at the upper half parts of the film. Columnar ZnSe crystals contain high-density {111} stacking faults due to the low stacking fault energy of ZnSe. A balance of deposition and re-evaporation on the substrate during the film growth will be responsible for the resultant nanocrystal morphology.

X-ray fluorescence analysis of Pb, Fe and Zn in kohl

NASA Astrophysics Data System (ADS)

Daar, Eman; Alsubaie, Abdullah; Almugren, K. S.; Barnes, S.; Alanazi, A.; Alyahyawi, A.; Alomairy, S.; Al-Sulaiti, H.; Bradley, D. A.

Kohl, a facial salve used in ancient times as a symbol of affluence, now enjoys more widespread traditional followings, for cosmetic, religious and supposed medicinal purposes. Popularly used by women and men of all ages, particularly those of North African, Middle Eastern, Southern Asia, Japanese and Chinese origins, it is also known to be used on neonates and children from such populations. With small-scale producers of kohl possessing a growing awareness of the adverse market impact of products that contain (lead) Pb and other toxicity related elements, some claim their products to be Pb-free, offering an apparent change from the more traditional galena-based (lead sulphide) media. Among the published physiological effects of exposure to Pb is that it replaces Ca in bones and teeth, making them weak and fragile, other impacts including nephrotoxicity, also linked with increased Pb blood levels in studies in Oman, Canada, Saudi Arabia, India and Pakistan. Current study involves XRF analysis of Pb, Fe and Zn concentrations in 135 samples of kohl from nine randomly selected suppliers (15 samples of each brand being represented). In pursuit of this, use was made of an in-house assembled facility comprising compact high-performance components, the arrangement offering sufficient sensitivity for the purposes of present study. In most of the samples investigated in the present study observation has been made of concentrations of Pb at elevated levels, quantification of those levels also demonstrating a need to address self-attenuation by the Pb itself. Significant concentration of Fe have also been found in several of the samples.

Characteristics of Creep Damage for 60Sn-40Pb Solder Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Y.; Chow, C.L.; Fang, H.E.

This paper presents a viscoplasticity model taking into account the effects of change in grain or phase size and damage on the characterization of creep damage in 60Sn-40Pb solder. Based on the theory of damage mechanics, a two-scalar damage model is developed for isotropic materials by introducing the free energy equivalence principle. The damage evolution equations are derived in terms of the damage energy release rates. In addition, a failure criterion is developed based on the postulation that a material element is said to have ruptured when the total damage accumulated in the element reaches a critical value. The damagemore » coupled viscoplasticity model is discretized and coded in a general-purpose finite element program known as ABAQUS through its user-defined material subroutine UMAT. To illustrate the application of the model, several example cases are introduced to analyze, both numerically and experimentally, the tensile creep behaviors of the material at three stress levels. The model is then applied to predict the deformation of a notched specimen under monotonic tension at room temperature (22 C). The results demonstrate that the proposed model can successfully predict the viscoplastic behavior of the solder material.« less

Metal accumulation strategies in plants spontaneously inhabiting Zn-Pb waste deposits.

PubMed

Wójcik, Małgorzata; Sugier, Piotr; Siebielec, Grzegorz

2014-07-15

Metal (Zn, Pb, Cd, Cu, Ni, Cr) accumulation in shoots of 38 plant species spontaneously colonizing three Zn-Pb waste deposits in southern Poland was studied in order to find out if the age of the waste (30-130 years) or its type (slag or flotation residues) influence metal content in plants and to identify species potentially suitable for biomonitoring and phytoremediation. The total metal concentrations in the waste upper layers ranged from 7300 to 171,790 mg kg(-1) for Zn, from 1390 to 22,265 mg kg(-1) for Pb, and from 66 to 1,464 mg kg(-1) for Cd, whereas CaCl2-extracted fractions accounted for 0.034-0.11 %, 0.005-0.03 %, and 0.28-0.62 % of total Zn, Pb and Cd concentrations, respectively. The concentrations of Cu, Ni, and Cr in substrates and in plants were low and ranged within the background values. Metal accumulation in plant shoots was poorly correlated with both total and CaCl2-extracted forms of metals in the substrate and was highly variable among species and also specimens of the same species. The highest mean concentrations of Zn, Pb and Cd were found in Anthyllis vulneraria L. (901.5 mg kg(-1)), Echium vulgare L. (116.92 mg kg(-1)), and Hieracium piloselloides Vill. (26.86 mg kg(-1)), respectively. Besides Reseda lutea L., no species appeared to be a good indicator of polymetallic environment pollution based on chemical analysis of shoots; however, metal accumulation in the whole plant communities of a particular contaminated area might be an accurate tool for assessment of metal transfer to vegetation irrespective of the type or age of the waste. All the species studied developed a metal exclusion strategy, thus exhibiting potential for phytostabilization of metalliferous wastelands. Copyright © 2014 Elsevier B.V. All rights reserved.

Sensing mechanism of SnO2/ZnO nanofibers for CH3OH sensors: heterojunction effects

NASA Astrophysics Data System (ADS)

Tang, Wei

2017-11-01

SnO2/ZnO composite nanofibers were synthesized by a simple electrospinning method. The prepared SnO2/ZnO gas sensors exhibited good linear and high response to methanol. The enhanced sensing behavior of SnO2/ZnO might be associated with the homotypic heterojunction effects formed in n-SnO2/n-ZnO nanograins boundaries. In addition, the possible sensing mechanisms of methanol on SnO2/ZnO surface were investigated by density functional theory in order to make the methanol adsorption and desorption process clear. Zn doped SnO2 model was adopted to approximate the SnO2/ZnO structure because of the calculation power limitations. Calculation results showed that when exposed to methanol, the methanol would react with bridge oxygen O2c , planar O3c and pre adsorbed oxygen vacancy on the lattice surface. The -CH3 and -OH of methanol molecule would both lose one H atom. The lost H atoms bonded with oxygen at the adsorption sites. The final products were HCHO and H2O. Electrons were transferred from methanol to the lattice surface to reduce the resistance of semiconductor gas sensitive materials, which is in agreement with the experimental phenomena. More adsorption models of other interfering gases, such as ethanol, formaldehyde and acetone will be built and calculated to explain the selectivity issue from the perspective of adsorption energy, transferred charge and density of states in the future work.

Effect of pyrolysis temperature on chemical form, behavior and environmental risk of Zn, Pb and Cd in biochar produced from phytoremediation residue.

PubMed

Huang, Hui; Yao, Wenlin; Li, Ronghua; Ali, Amjad; Du, Juan; Guo, Di; Xiao, Ran; Guo, Zhanyu; Zhang, Zengqiang; Awasthi, Mukesh Kumar

2018-02-01

This study aimed to evaluate the chemical forms, behavior and environmental risk of heavy metal (HMs) Zn, Pb and Cd in phytoremediation residue (PMR) pyrolyzed at 350 °C, 550 °C and 750 °C, respectively. The behavior of HMs variation during the PMR pyrolysis process was analyzed and the potential HMs environmental risk of phytoremediation residue biochars (PMB) was assessed which was seldom investigated before. The results showed that the pyrolysis temperature increase decreased the soluble/exchangeable HMs fraction and alleviated the HMs bioavailability. When the temperature was over 550 °C, the adsorbed Zn(II), Pb(II) and Cd(II) were turned into oxides forms and concentrated in PMB with more stable forms exhibiting lower risk assessment code and potential ecological risk index. The ecotoxicity test showed higher pyrolysis temperature favored the reduction of PMB ecotoxicity. It is suggested that pyrolysis temperature above 550°C may be suitable for thermal treatment of PMR with acceptable environmental risk. Copyright © 2017 Elsevier Ltd. All rights reserved.

The giant Upper Yangtze Pb-Zn province in SW China: Reviews, new advances and a new genetic model

NASA Astrophysics Data System (ADS)

Zhou, Jia-Xi; Xiang, Zhen-Zhong; Zhou, Mei-Fu; Feng, Yue-Xing; Luo, Kai; Huang, Zhi-Long; Wu, Tao

2018-04-01

western Yangtze Block. The change of tectonic regimes from extension to compression after eruption of basalts of the ELIP, and then to extension during Early Mesozoic, facilitated extraction, migration, and excretion of ore-forming metals and associated fluids. Mixing of fluids and reduction geochemical barrier activated TSR, causing cyclical carbonate dissolution, CO2 degassing and recrystallization (namely carbonate buffer). All these processes triggered continuous precipitation of huge amounts of hydrothermal minerals. Underplating and eruption of ELIP basalts provided heat flow, fluids and volatiles, whereas the basalts acted as an impermeable and protective layer, and even as ore-hosting rocks. These Pb-Zn deposits have spatial and genetic association with igneous activities of the ELIP, and are characterized by high ore grades (>10 wt% Pb + Zn), high concentrations of associated metals (e.g. Cu, Ag, Ge, and Cd), and medium-low temperatures (usually < 300 °C) and salinities (commonly < 20 wt% NaCl equiv.), all of which are significantly different from those of typical Mississippi Valley-type (MVT) deposits. Hence, the carbonate-hosted epigenetic Pb-Zn deposits in the Upper Yangtze metallogenic province representing to a new type of Pb-Zn deposits that are hosted in platform carbonate sequences and formed within compressional zones of passive margin tectonic settings.

Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

NASA Astrophysics Data System (ADS)

Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

2014-01-01

The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

Effect of Cu(II), Cd(II) and Zn(II) on Pb(II) biosorption by algae Gelidium-derived materials.

PubMed

Vilar, Vítor J P; Botelho, Cidália M S; Boaventura, Rui A R

2008-06-15

Biosorption of Pb(II), Cu(II), Cd(II) and Zn(II) from binary metal solutions onto the algae Gelidium sesquipedale, an algal industrial waste and a waste-based composite material was investigated at pH 5.3, in a batch system. Binary Pb(II)/Cu(II), Pb(II)/Cd(II) and Pb(II)/Zn(II) solutions have been tested. For the same equilibrium concentrations of both metal ions (1 mmol l(-1)), approximately 66, 85 and 86% of the total uptake capacity of the biosorbents is taken by lead ions in the systems Pb(II)/Cu(II), Pb(II)/Cd(II) and Pb(II)/Zn(II), respectively. Two-metal results were fitted to a discrete and a continuous model, showing the inhibition of the primary metal biosorption by the co-cation. The model parameters suggest that Cd(II) and Zn(II) have the same decreasing effect on the Pb(II) uptake capacity. The uptake of Pb(II) was highly sensitive to the presence of Cu(II). From the discrete model it was possible to obtain the Langmuir affinity constant for Pb(II) biosorption. The presence of the co-cations decreases the apparent affinity of Pb(II). The experimental results were successfully fitted by the continuous model, at different pH values, for each biosorbent. The following sequence for the equilibrium affinity constants was found: Pb>Cu>Cd approximately Zn.

Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature

NASA Astrophysics Data System (ADS)

Cong, Yingying; Han, Dedong; Wu, Jing; Zhao, Nannan; Chen, Zhuofa; Zhao, Feilong; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2015-04-01

High-performance fully transparent Al-Sn-Zn-O thin-film transistors (ATZO TFTs) with excellent electrical performance have been successfully fabricated by RF magnetron sputtering on glass at low temperatures. Two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions. Finally, we achieve two excellent ATZO TFTs with competitive advantages. The ATZO TFT with larger amounts of dopants exhibits a superior field effect mobility μFE of 102.38 cm2 V-1 s-1, an ON/OFF current ratio (Ion/Ioff) of 1.18 × 107, and a threshold voltage VT of 1.35 V. The device with smaller amounts of dopants demonstrates better crystal quality and an excellent subthreshold swing SS of 155 mV/dec. Furthermore, it is less affected by oxygen partial pressure. The ATZO thin films display a high transmittance of over 80% in the visible light range.

Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk; Hussain, Zakir; Mujahid, Mohammad

Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedancemore » spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.« less

Selective Chemical Conversion of Sugars in Aqueous Solutions without Alkali to Lactic Acid Over a Zn-Sn-Beta Lewis Acid-Base Catalyst

PubMed Central

Dong, Wenjie; Shen, Zheng; Peng, Boyu; Gu, Minyan; Zhou, Xuefei; Xiang, Bo; Zhang, Yalei

2016-01-01

Lactic acid is an important platform molecule in the synthesis of a wide range of chemicals. However, in aqueous solutions without alkali, its efficient preparation via the direct catalysis of sugars is hindered by a side dehydration reaction to 5-hydroxymethylfurfural due to Brønsted acid, which originates from organic acids. Herein, we report that a previously unappreciated combination of common two metal mixed catalyst (Zn-Sn-Beta) prepared via solid-state ion exchange synergistically promoted this reaction. In water without a base, a conversion exceeding 99% for sucrose with a lactic acid yield of 54% was achieved within 2 hours at 190 °C under ambient air pressure. Studies of the acid and base properties of the Zn-Sn-Beta zeolite suggest that the introduction of Zn into the Sn-Beta zeolite sequentially enhanced both the Lewis acid and base sites, and the base sites inhibited a series of side reactions related to fructose dehydration to 5-hydroxymethylfurfural and its subsequent decomposition. PMID:27222322

Room Temperature Ferroelectricity in Ultrathin SnTe Films

NASA Astrophysics Data System (ADS)

Chang, Kai; Liu, Junwei; Lin, Haicheng; Zhao, Kun; Zhong, Yong; Ji, Shuai-Hua; He, Ke; Wang, Lili; Ma, Xucun; Fu, Liang; Chen, Xi; Xue, Qi-Kun

2015-03-01

The ultrathin SnTe films with several unit cell thickness grown on graphitized SiC(0001) surface have been studied by the scanning tunneling microscopy and spectroscopy (STM/S). The domain structures, local lattice distortion and the electronic band bending at film edges induced by the in-plane spontaneous polarization along < 110 > have been revealed at atomic scale. The experiments at variant temperature show that the Curie temperature Tc of the one unit cell thick (two atomic layers) SnTe film is as high as 280K, much higher than that of the bulk counterpart (~100K) and the 2-4 unit cell thick films even indicate robust ferroelectricity at room temperature. This Tc enhancement is attributed to the stress-free interface, larger electronic band gap and greatly reduced Sn vacancy concentration in the ultrathin films. The lateral domain size varies from several tens to several hundreds of nanometers, and the spontaneous polarization direction could be modified by STM tip. Those properties of ultrathin SnTe films show the potential application on ferroelectric devices. The work was financially supported by Ministry of Science and Technology of China, National Science Foundation and Ministry of Education of China.

High optical switching speed and flexible electrochromic display based on WO3 nanoparticles with ZnO nanorod arrays' supported electrode

NASA Astrophysics Data System (ADS)

Wang, Mingjun; Fang, Guojia; Yuan, Longyan; Huang, Huihui; Sun, Zhenhua; Liu, Nishuang; Xia, Shanhong; Zhao, Xingzhong

2009-05-01

The electrochromic (EC) property of WO3 nanoparticles grown on vertically self-aligned ZnO nanorods (ZNRs) is reported. An electrochromic character display based on WO3 nanoparticle-modified ZnO nanorod arrays on a flexible substrate has been fabricated and demonstrated. The ZNRs were first synthesized on ZnO-seed-coated In2O3:Sn (ITO) glass (1 cm2 cell) and polyethylene terephthalate (PET) (4 cm2 cell) substrates by a low temperature hydrothermal method, and then amorphous WO3 nanoparticles were grown directly on the surface of the ZNRs by the pulsed laser deposition (PLD) method. The ZNR-based EC device shows high transparence, good electrochromic stability and fast switching speed (4.2 and 4 s for coloration and bleaching, respectively, for a 1 cm2 cell). The good performance of the ZNR electrode-based EC display can be attributed to the large surface area, high crystallinity and good electron transport properties of the ZNR arrays. Its high contrast, fast switching, good memory and flexible characteristics indicate it is a promising candidate for flexible electrochromic displays or electronic paper.

Achieving composition-controlled Cu2ZnSnS4 films by sulfur-free annealing process

NASA Astrophysics Data System (ADS)

Jiang, Hailong; Wei, Xiaoqing; Huang, Yongliang; Wang, Xian; Han, Anjun; Liu, Xiaohui; Liu, Zhengxin; Meng, Fanying

2017-06-01

Cu2ZnSnS4 (CZTS) films were firstly prepared by the nonvacuum spin-coating method, and then annealed at 550 °C in N2 atmosphere. A graphite box was used to inhibit the volatilization of gaseous SnS and S2 to suppress the CZTS decomposition and generation of MoS2 during annealing. The sulfur supplementation carried out in a conventional annealing process was not applied in this work. It was found that Sn loss was overcome and the compositions of postannealed films were close to that of precursor solution. Thus, by this method, the compositions of CZTS films can be controlled by adjusting the elemental ratios of the precursor solution. Besides, the increase in inert atmosphere pressure could further minimize the Sn loss and improve the crystallinity of CZTS films. Furthermore, the resistive MoS2 layer between the CZTS film and the Mo layer was suppressed because sulfur was not used and CZTS decomposition was suppressed.

Concomitant Zn-Cd and Pb retention in a carbonated fluvio-glacial deposit under both static and dynamic conditions.

PubMed

Lassabatere, Laurent; Spadini, Lorenzo; Delolme, Cécile; Février, Laureline; Galvez Cloutier, Rosa; Winiarski, Thierry

2007-11-01

The chemical and physical processes involved in the retention of 10(-2)M Zn, Pb and Cd in a calcareous medium were studied under saturated dynamic (column) and static (batch) conditions. Retention in columns decreased in order: Pb>Cd approximately Zn. In the batch experiments, the same order was observed for a contact time of less than 40h and over, Pb>Cd>Zn. Stronger Pb retention is in accordance with the lower solubility of Pb carbonates. However, the equality of retained Zn and Cd does not fit the solubility constants of carbonated solids. SEM analysis revealed that heavy metals and calcareous particles are associated. Pb precipitated as individualized Zn-Cd-Ca- free carbonated crystallites. All the heavy metals were also found to be associated with calcareous particles, without any change in their porosity, pointing to a surface/lattice diffusion-controlled substitution process. Zn and Cd were always found in concomitancy, though Pb fixed separately at the particle circumferences. The Phreeqc 2.12 interactive code was used to model experimental data on the following basis: flow fractionation in the columns, precipitation of Pb as cerrusite linked to kinetically controlled calcite dissolution, and heavy metal sorption onto proton exchanging sites (presumably surface complexation onto a calcite surface). This model simulates exchanges of metals with surface protons, pH buffering and the prevention of early Zn and Cd precipitation. Both modeling and SEM analysis show a probable significant decrease of calcite dissolution along with its contamination with metals.

Superconductivity induced by In substitution into the topological crystalline insulator Pb0.5Sn0.5Te

NASA Astrophysics Data System (ADS)

Zhong, R. D.; Schneeloch, J. A.; Liu, T. S.; Camino, F. E.; Tranquada, J. M.; Gu, G. D.

2014-07-01

Indium substitution turns the topological crystalline insulator (TCI) Pb0.5Sn0.5Te into a possible topological superconductor. To investigate the effect of the indium concentration on the crystal structure and superconducting properties of (Pb0.5Sn0.5)1-xInxTe, we have grown high-quality single crystals using a modified floating-zone method and have performed systematic studies for indium content in the range 0≤x≤0.35. We find that the single crystals retain the rocksalt structure up to the solubility limit of indium (x ˜0.30). Experimental dependencies of the superconducting transition temperature (Tc) and the upper critical magnetic field (Hc2) on the indium content x have been measured. The maximum Tc is determined to be 4.7 K at x =0.30, with μ0Hc2(T =0)≈5 T.

Multisource Synergistic Electrocatalytic Oxidation Effect of Strongly Coupled PdM (M = Sn, Pb)/N-doped Graphene Nanocomposite on Small Organic Molecules

PubMed Central

Wu, Peng; Huang, Yiyin; Kang, Longtian; Wu, Maoxiang; Wang, Yaobing

2015-01-01

A series of palladium-based catalysts of metal alloying (Sn, Pb) and/or (N-doped) graphene support with regular enhanced electrocatalytic activity were investigated. The peak current density (118.05 mA cm−2) of PdSn/NG is higher than the sum current density (45.63 + 47.59 mA cm−2) of Pd/NG and PdSn/G. It reveals a synergistic electrocatalytic oxidation effect in PdSn/N-doped graphene Nanocomposite. Extend experiments show this multisource synergetic catalytic effect of metal alloying and N-doped graphene support in one catalyst on small organic molecule (methanol, ethanol and Ethylene glycol) oxidation is universal in PdM(M = Sn, Pb)/NG catalysts. Further, The high dispersion of small nanoparticles, the altered electron structure and Pd(0)/Pd(II) ratio of Pd in catalysts induced by strong coupled the metal alloying and N-doped graphene are responsible for the multisource synergistic catalytic effect in PdM(M = Sn, Pb) /NG catalysts. Finally, the catalytic durability and stability are also greatly improved. PMID:26434949

Thermoelectric properties of antiperovskite calcium oxides Ca{sub 3}PbO and Ca{sub 3}SnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okamoto, Y., E-mail: yokamoto@nuap.nagoya-u.ac.jp; Institute for Advanced Research, Nagoya University, Nagoya 464-8601; Sakamaki, A.

We report the thermoelectric properties of polycrystalline samples of Ca{sub 3}Pb{sub 1−x}Bi{sub x}O (x = 0, 0.1, 0.2) and Ca{sub 3}SnO, both crystallizing in a cubic antiperovskite-type structure. The Ca{sub 3}SnO sample shows metallic resistivity and its thermoelectric power approaches 100 μV K{sup −1} at room temperature, resulting in the thermoelectric power factor of Ca{sub 3}SnO being larger than that of Ca{sub 3}Pb{sub 1−x}Bi{sub x}O. On the basis of Hall and Sommerfeld coefficients, the Ca{sub 3}SnO sample is found to be a p-type metal with a carrier density of ∼10{sup 19 }cm{sup −3}, a mobility of ∼80 cm{sup 2} V{sup −1} s{sup −1}, both comparablemore » to those in degenerated semiconductors, and a moderately large hole carrier effective mass. The coexistence of moderately high mobility and large effective mass observed in Ca{sub 3}SnO, as well as possible emergence of a multivalley electronic structure with a small band gap at low-symmetry points in k-space, suggests that the antiperovskite Ca oxides have strong potential as a thermoelectric material.« less

ZnO-Assisted Growth of CH3NH3PbI3- xCl x Film and Efficient Planar Perovskite Solar Cells with a TiO2/ZnO/C60 Electron Transport Trilayer.

PubMed

Xu, Jia; Fang, Mingde; Chen, Jing; Zhang, Bing; Yao, Jianxi; Dai, Songyuan

2018-06-06

Appropriate electron transport layers (ETL) are essential in perovskite solar cells (PSCs) with high power conversion efficiency (PCE). Herein, a TiO 2 /ZnO/C 60 trilayer fabricated on a transparent fluorine-doped tin oxide (FTO) glass substrate is used as a compound ETL in planar PSCs. The trilayer shows positive effects on both perovskite synthesis and device performance. The ZnO layer assists growth of CH 3 NH 3 PbI 3- x Cl x ( x ≈ 0) annealed at a lower temperature and with a shorter time, which is due to a more rapid and easier decomposition of the intermediate CH 3 NH 3 PbCl 3 phase in the growth of CH 3 NH 3 PbI 3- x Cl x . All three materials in the trilayer are important for obtaining PSCs with a high PCE. ZnO is critical for enhancing the open circuit voltage by ensuring proper energy alignment with the TiO 2 and C 60 layers. C 60 enhances carrier extraction from the CH 3 NH 3 PbI 3- x Cl x layer. TiO 2 eliminates charge recombination at the FTO surface and ensures efficient electron collection. The best-performing PSC based on the TiO 2 /ZnO/C 60 electron transport trilayer features a PCE of 18.63% with a fill factor of 79.12%. These findings help develop an understanding of the effects of ZnO-containing ETLs on perovskite film synthesis and show promise for the future development of high-performance PSCs with compound ETLs.

Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

NASA Astrophysics Data System (ADS)

Flores, Mauricio A.

2018-01-01

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

A study of Bi-Pb-Sn-Cd-Sb penta-alloys rapidly quenched from melt

NASA Astrophysics Data System (ADS)

Kamal, M.; El-Bediwi, A. B.

2004-11-01

Optical microscopy, X-ray diffractometry, the double bridge method, the Vickers microhardness testing and dynamic resonance techniques have been used to investigate structure, electrical resistivity, hardness, internal friction and elastic modulus of quenched Bi-Pb-Sn-Cd-Sb penta-alloys. The properties of these penta-alloys are greatly affected by rapid quenching. The intermetallic compound chi(Pb-Bi) or Bi3Pb7 is obtained after rapid quenching using the melt-spinning technique, and this is in agreement with reports by other authors [Marshall, T.J., Mott, G. T. and Grieverson, M. H. (1975). Br. J. Radiol., 48, 924, Kamal, M., El-Bediwi, A. B. and Karman, M. B. (1998). Structure, mechanical properties and electrical resistivity of rapidly solidified Pb-Sn-Cd and Pb-Bi-Sn-Cd alloys. J. Mater. Sci.: Mater. Electron., 9, 425, Borromee-Gautier, C., Giessen, B. C. and Grrant, N. J. (1968). J. Chem. Phys., 48,1905, Moon, K.-W., Boettinger, W. J., Kanner, U. R., Handwerker, C. A. and Lee, D.-J. (2001). The effect of Pb contamination on the solidification behavior of Sn-Bi solders. J. Electron. Mater, 30, 45.]. The quenched Bi43.5Pb44.5Cd5Sn2Sb5 alloy has important properties for safety devices in fire detection and extinguishing systems.

Tin and germanium based two-dimensional Ruddlesden-Popper hybrid perovskites for potential lead-free photovoltaic and photoelectronic applications.

PubMed

Ma, Liang; Ju, Ming-Gang; Dai, Jun; Zeng, Xiao Cheng

2018-06-21

Despite their high power conversion efficiency, the commercial applications of hybrid organic-inorganic lead (Pb) halide perovskite based solar cells are still hampered by concerns about the toxicity of Pb and the structural stability in open air. Herein, based on density-functional theory computation, we show that lead-free tin (Sn) and germanium (Ge) based two-dimensional (2D) Ruddlesden-Popper hybrid organic-inorganic perovskites with a thickness of a few unit-cells, BA2MAn-1MnI3n+1 (M = Sn or Ge, n = 2-4), possess desirable electronic, excitonic and light absorption properties, thereby showing promise for photovoltaic and/or photoelectronic applications. In particular, we show that by increasing the layer thickness of the Sn-based 2D perovskites, the bandgap can be lowered towards the optimal range (0.9-1.6 eV) for solar cells. Meanwhile, the exciton binding energy is reduced to a more optimal value. In addition, theoretical assessment indicates that the thermodynamic stability of Sn-/Ge-based 2D perovskites is notably enhanced compared to that of their 3D analogues. These features render the Sn-/Ge-based 2D hybrid perovskites with a thickness of a few tens of unit cells promising lead-free perovskites with much improved structural stabilities for photovoltaic and/or photoelectronic applications.

Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN 2-Based Solar Cells

DOE PAGES

Arca, Elisabetta; Fioretti, Angela; Lany, Stephan; ...

2017-12-07

ZnSnN 2 (ZTN) has been proposed as a new earth abundant absorber material for PV applications. While carrier concentration has been reduced to values suitable for device implementation, other properties such as ionization potential, electron affinity and work function are not known. Here, we experimentally determine the value of ionization potential (5.6 eV), electron affinity (4.1 eV) and work function (4.4 eV) for ZTN thin film samples with Zn cation composition Zn/(Zn+Sn) = 0.56 and carrier concentration n = 2x10 19cm -3. Using both experimental and theoretical results, we build a model to simulate the device performance of a ZTN/Mg:CuCrOmore » 2 solar cell, showing a potential efficiency of 23% in the limit of no defects present. We also investigate the role of band tails and recombination centers on the cell performance. In particular device simulations show that band tails are highly detrimental to the cell efficiency, and recombination centers are a major limitation if present in concentration comparable to the net carrier density. The effect of the position of the band edges of the p-type junction partner was assessed too. Through this study, we determine the major bottlenecks for the development of ZTN-based solar cell and identify avenues to mitigate them.« less

Electronic structure and p-type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

NASA Astrophysics Data System (ADS)

Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

2018-04-01

Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

ZnO-dotted porous ZnS cluster microspheres for high efficient, Pt-free photocatalytic hydrogen evolution.

PubMed

Wu, Aiping; Jing, Liqiang; Wang, Jianqiang; Qu, Yang; Xie, Ying; Jiang, Baojiang; Tian, Chungui; Fu, Honggang

2015-03-09

The Pt-free photocatalytic hydrogen evolution (PHE) has been the focus in the photocatalysis field. Here, the ZnO-dotted porous ZnS cluster microsphere (PCMS) is designed for high efficient, Pt-free PHE. The PCMS is designed through an easy "controlling competitive reaction" strategy by selecting the thiourea as S(2-) source and Zn(Ac)₂·2H₂O as Zn source in ethylene glycol medium. Under suitable conditions, one of the PCMS, named PCMS-1, with high SBET specific area of 194 m(2)g(-1), microsphere size of 100 nm and grain size of 3 nm can be obtained. The formation of PCMS is verified by TEM, XAES, XPS, Raman and IR methods. Importantly, a series of the experiments and theoretical calculation demonstrate that the dotting of ZnO not only makes the photo-generated electrons/hole separate efficiently, but also results in the formation of the active catalytic sites for PHE. As a result, the PCMS-1 shows the promising activity up to 367 μmol h(-1) under Pt-free condition. The PHE activity has no obvious change after addition 1 wt.% Pt, implying the presence of active catalytic sites for hydrogen evolution in the PCMS-1. The easy synthesis process, low preparation cost of the PCMS makes their large potential for Pt-free PHE.

ZnO-dotted porous ZnS cluster microspheres for high efficient, Pt-free photocatalytic hydrogen evolution

NASA Astrophysics Data System (ADS)

Wu, Aiping; Jing, Liqiang; Wang, Jianqiang; Qu, Yang; Xie, Ying; Jiang, Baojiang; Tian, Chungui; Fu, Honggang

2015-03-01

The Pt-free photocatalytic hydrogen evolution (PHE) has been the focus in the photocatalysis field. Here, the ZnO-dotted porous ZnS cluster microsphere (PCMS) is designed for high efficient, Pt-free PHE. The PCMS is designed through an easy ``controlling competitive reaction'' strategy by selecting the thiourea as S2- source and Zn(Ac)2.2H2O as Zn source in ethylene glycol medium. Under suitable conditions, one of the PCMS, named PCMS-1, with high SBET specific area of 194 m2g-1, microsphere size of 100 nm and grain size of 3 nm can be obtained. The formation of PCMS is verified by TEM, XAES, XPS, Raman and IR methods. Importantly, a series of the experiments and theoretical calculation demonstrate that the dotting of ZnO not only makes the photo-generated electrons/hole separate efficiently, but also results in the formation of the active catalytic sites for PHE. As a result, the PCMS-1 shows the promising activity up to 367 μmol h-1 under Pt-free condition. The PHE activity has no obvious change after addition 1 wt.% Pt, implying the presence of active catalytic sites for hydrogen evolution in the PCMS-1. The easy synthesis process, low preparation cost of the PCMS makes their large potential for Pt-free PHE.

Incorporation of trace elements in Portland cement clinker: Thresholds limits for Cu, Ni, Sn or Zn

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gineys, N., E-mail: nathalie.gineys@mines-douai.fr; EMDouai, LGCgE-MPE-GCE, F-59508 Douai; Aouad, G.

2011-11-15

This paper aims at defining precisely, the threshold limits for several trace elements (Cu, Ni, Sn or Zn) which correspond to the maximum amount that could be incorporated into a standard clinker whilst reaching the limit of solid solution of its four major phases (C{sub 3}S, C{sub 2}S, C{sub 3}A and C{sub 4}AF). These threshold limits were investigated through laboratory synthesised clinkers that were mainly studied by X-ray Diffraction and Scanning Electron Microscopy. The reference clinker was close to a typical Portland clinker (65% C{sub 3}S, 18% C{sub 2}S, 8% C{sub 3}A and 8% C{sub 4}AF). The threshold limits formore » Cu, Ni, Zn and Sn are quite high with respect to the current contents in clinker and were respectively equal to 0.35, 0.5, 0.7 and 1 wt.%. It appeared that beyond the defined threshold limits, trace elements had different behaviours. Ni was associated with Mg as a magnesium nickel oxide (MgNiO{sub 2}) and Sn reacted with lime to form a calcium stannate (Ca{sub 2}SnO{sub 4}). Cu changed the crystallisation process and affected therefore the formation of C{sub 3}S. Indeed a high content of Cu in clinker led to the decomposition of C{sub 3}S into C{sub 2}S and of free lime. Zn, in turn, affected the formation of C{sub 3}A. Ca{sub 6}Zn{sub 3}Al{sub 4}O{sub 15} was formed whilst a tremendous reduction of C{sub 3}A content was identified. The reactivity of cements made with the clinkers at the threshold limits was followed by calorimetry and compressive strength measurements on cement paste. The results revealed that the doped cements were at least as reactive as the reference cement.« less

Structural Characterization Studies on Semiconducting ZnSnN 2 Films using Synchrotron X-ray Diffraction

NASA Astrophysics Data System (ADS)

Senabulya, Nancy

This work is motivated by the need for new visible frequency direct bandgap semiconductor materials that are earth abundant and low-cost to meet the increasing demand for optoelectronic device applications such as solid state lighting and photovoltaics. Zinc-Tin-Nitride (ZnSnN2), a member of the II-IV nitride semiconductor family has been proposed as an alternative to the more common III-nitride semiconductors for use in optoelectronic devices. This material has been synthesized under optimized conditions using plasma assisted molecular beam epitaxy. Though a lot of research has recently been done computationally to predict the electronic and structural properties of ZnSnN2, experimental verification of these theories in single crystal thin films is lacking and warrants investigation because the accurate determination of the crystal structure of ZnSnN2 is a fundamental prerequisite for controlling and optimizing optoelectronic properties. In this synchrotron x-ray diffraction study, we present experimental validation, through unit cell refinement and 3d reciprocal space maps, of the crystal structure of single domain ZnSnN2 films deposited on (111) Yttria stabilized zirconia (YSZ) and (001) Lithium gallate (LGO) substrates. We find that ZnSnN2 films grown on (111) YSZ can attain both the theoretically predicted disordered wurtzite and ordered orthorhombic Pna21 structures under carefully controlled MBE growth conditions, while films grown on (001) LGO have the ordered Pn21a orthorhombic crystal structure. Through a systematic annealing study, a temperature induced first order structural phase transition from the wurtzite to orthorhombic phase is realized, characterized by the appearance of superstructure reflections in.

Solar Absorber Cu 2 ZnSnS 4 and its Parent Multilayers ZnS/SnS 2 /Cu 2 S Synthesized by Atomic Layer Deposition and Analyzed by X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baryshev, Sergey V.; Riha, Shannon C.; Zinovev, Alexander V.

2015-06-01

Presented here are results of x-ray photoelectron spectroscopy (XPS) on multilayers of metal-sulfide binaries ZnS, SnS2, and Cu2S grown by atomic layer deposition (ALD) on Si substrates, and of Cu2ZnSnS4 (CZTS) formed upon 450 °C annealing of the parent multilayer ZnS/SnS2/Cu2S. Survey and detailed spectral analysis of the multilayer ZnS/SnS2/Cu2S are presented step-wise, as each layer was sequentially added by ALD. The set of data is finalized with spectra of the resulting alloy CZTS. XPS analyses indicate significant mixing between SnS2 and Cu2S, which favors CZTS formation within the ALD approach.

Chemical and thermal stability of the characteristics of filtered vacuum arc deposited ZnO, SnO2 and zinc stannate thin films

NASA Astrophysics Data System (ADS)

Çetinörgü, E.; Goldsmith, S.

2007-09-01

ZnO, SnO2 and zinc stannate thin films were deposited on commercial microscope glass and UV fused silica substrates using filtered vacuum arc deposition system. During the deposition, the substrate temperature was at room temperature (RT) or at 400 °C. The film structure and composition were determined using x-ray diffraction and x-ray photoelectron spectroscopy, respectively. The transmission of the films in the VIS was 85% to 90%. The thermal stability of the film electrical resistance was determined in air as a function of the temperature in the range 28 °C (RT) to 200 °C. The resistance of ZnO increased from ~ 5000 to 105 Ω when heated to 200 °C, that of SnO2 films increased from 500 to 3900 Ω, whereas that of zinc stannate thin films increased only from 370 to 470 Ω. During sample cooling to RT, the resistance of ZnO and SnO2 thin films continued to rise considerably; however, the increase in the zinc stannate thin film resistance was significantly lower. After cooling to RT, ZnO and SnO2 thin films became practically insulators, while the resistance of zinc stannate was 680 Ω. The chemical stability of the films was determined by immersing in acidic and basic solutions up to 27 h. The SnO2 thin films were more stable in the HCl solution than the ZnO and the zinc stannate thin films; however, SnO2 and zinc stannate thin films that were immersed in the NaOH solution did not dissolve after 27 h.

Structural and photocatalytic studies on pure and Sn ion doped ZnO-graphene nanocomposites

NASA Astrophysics Data System (ADS)

Beura, Rosalin; Thangadurai, P.

2016-05-01

Graphene based metal oxide nanocomposites have been widely used as a photocatalyst for the treatment of water pollutants. This work demonstrates the synthesis of graphene composite with pure and Sn ion doped-ZnO and their photocatalytic properties are reported. Structural studies were carried out by X-ray diffraction and Raman spectroscopy to confirm the formation of the nanocomposites. Microstructure was characterized by scanning electron microscopy showing rod shaped ZnO and the layer structured graphene in the ZnO-graphene composite. In comparison with the undoped ZnO-graphene composite, the Sn ion doped ZnO-graphene composite have shown better degradation of methyl orange dye that is about 99% of degradation. Band gap of the composite materials was calculated to be 3.36 eV from the UV-Vis result.

Behaviors of heavy metals (Cd, Cu, Ni, Pb and Zn) in soil amended with composts.

PubMed

Gusiatin, Zygmunt Mariusz; Kulikowska, Dorota

2016-09-01

This study investigated how amendment with sewage sludge compost of different maturation times (3, 6, 12 months) affected metal (Cd, Cu, Ni, Pb, Zn) bioavailability, fractionation and redistribution in highly contaminated sandy clay soil. Metal transformations during long-term soil stabilization (35 months) were determined. In the contaminated soil, Cd, Ni and Zn were predominately in the exchangeable and reducible fractions, Pb in the reducible fraction and Cu in the reducible, exchangeable and oxidizable fractions. All composts decreased the bioavailability of Cd, Ni and Zn for up to 24 months, which indicates that cyclic amendment with compost is necessary. The bioavailability of Pb and Cu was not affected by compost amendment. Based on the reduced partition index (IR), metal stability in amended soil after 35 months of stabilization was in the following order: Cu > Ni = Pb > Zn > Cd. All composts were more effective in decreasing Cd, Ni and Zn bioavailability than in redistributing the metals, and increasing Cu redistribution more than that of Pb. Thus, sewage sludge compost of as little as 3 months maturation can be used for cyclic amendment of multi-metal-contaminated soil.

A label-free colorimetric sensor for Pb2+ detection based on the acceleration of gold leaching by graphene oxide.

PubMed

Shi, Xinhao; Gu, Wei; Zhang, Cuiling; Zhao, Longyun; Peng, Weidong; Xian, Yuezhong

2015-03-14

In this work, we developed a novel, label-free, colorimetric sensor for Pb(2+) detection based on the acceleration of gold leaching by graphene oxide (GO) at room temperature. Gold nanoparticles (AuNPs) can be dissolved in a thiosulfate (S2O3(2-)) aqueous environment in the presence of oxygen; however, the leaching rate is very slow due to the high activation energy (27.99 kJ mol(-1)). In order to enhance the reaction rate, some accelerators should be added. In comparison with the traditional accelerators (metal ions or middle ligands), we found that GO could efficiently accelerate the gold leaching reaction. Kinetic data demonstrate that the dissolution rate of gold in the Pb(2+)-S2O3(2-)-GO system is 5 times faster than that without GO at room temperature. In addition, the effects of surface modification and the nanoparticle size on the etching of AuNPs were investigated. Based on the GO-accelerated concentration-dependent colour changes of AuNPs, a colorimetric sensor for Pb(2+) detection was developed with a linear range from 0.1 to 20 μM and the limit of detection (LOD) was evaluated to be 0.05 μM. This colorimetric assay is simple, low-cost, label-free, and has numerous potential applications in the field of environmental chemistry.

Sn-doped ZnO nanopetal networks for efficient photocatalytic degradation of dye and gas sensing applications

NASA Astrophysics Data System (ADS)

Bhatia, Sonik; Verma, Neha; Bedi, R. K.

2017-06-01

Nowadays, tremendous increase in environmental issue is an alarming threat to the ecosystem. This paper reports, rapid synthesis and characterization for tin doped ZnO nanoparticles prepared by simple combustion method and doctor blade technique. The prepared nanoparticles were characterized by several techniques in terms of their morphological, structural, compositional, optical, photocatalytic and gas sensing properties. These detailed characterization confirmed that all the synthesized nanoparticles are well crystalline and having good optoelectronic properties. Herein, different concentrations of Sn (0.5 at. wt%, 1.0 at. wt%, 2.0 at. wt%, 3.0 at. wt%) were used as dopants (SZ1-SZ4). The morphology of synthesized technique confirmed that the petal-shaped nanoparticles has high surface area and are well crystalline. In order to develop smart and functional nano-device, the prepared powder was coated on glass substrate by doctor blade technique and fabricated device was sensed for ethanol and acetone gas at different operating temperatures (300-500̊C). It is noteworthy that morphology of the nanoparticles of the sensitive layer is maintained after different concentration of Sn. High sensitivity is the main cause of high surface area and tin doping. PL intensity near 598 nm of SZ3 is greater than other Sn-doped ZnO which indicates more oxygen vacancies of SZ3 is responsible for enhanced gas sensitivity and photocatalytic activity. The sensing performance showed 5% volume of ethanol and acetone and gases could be detected with sensitivity of 86.80% and 84.40% respectively. The mechanism for the improvement in the sensing properties can be explained with the surface adsorption theory. Sn-ZnO was used as photocatalyst for degradation of DR-31 dye. Optimum concentration of prepared nanoparticles (2.0 at. wt%) exhibits complete degradation of dye only in 60 min under UV irradiation.

Silver-bearing minerals in the Xinhua hydrothermal vein-type Pb-Zn deposit, South China

NASA Astrophysics Data System (ADS)

Wang, Minfang; Zhang, Xubo; Guo, Xiaonan; Pi, Daohui; Yang, Meijun

2018-02-01

Electron probe microanalysis (EPMA) results are reported for newly identified silver-bearing minerals from the Xinhua deposit, Yunkaidashan area, South China. The Xinhua deposit is a hydrothermal vein-type Pb-Zn deposit and is hosted in the Pubei Complex, which consists of a cordierite-biotite granite with a U-Pb zircon age of 244.3 ± 1.8-251.9 ± 2.2 Ma. The mineralization process is subdivided into four mineralization stages, characterized by the following mineral associations: mineralization stage I with quartz, pyrite, and sphalerite; mineralization stage II with siderite, galena, and tetrahedrite; mineralization stage III with quartz and galena; and mineralization stage IV with quartz, calcite, and baryte. Tetrahedrite series minerals, such as freibergite, argentotetrahedrite, and tennantite are the main Ag-bearing minerals in the Xinhua deposit. The greatest concentration of silver occurs in phases from mineralization stage II. Microscopic observations reveal close relationship between galena and tetrahedrite series minerals that mostly occur as irregular inclusions within galena. The negative correlation between Cu and Ag in the lattices of tetrahedrite series minerals suggests that Cu sites are occupied by Ag atoms. Zn substitution for Fe in argentotetrahedrite and Cd substitution for Pb in tetrahedrite are also observed. Micro-thermometric data reveal that both homogenization temperatures and calculated salinities of hydrothermal fluids decrease progressively from the early to the later mineralization stages. The metal ions, such as Ag+, Cu+, Pb2+, and Zn2+, are transported as chlorine complex ions in the early mineralization stage and as bisulfide complex ions in the late mineralization stage, caused by changes in oxygen fugacity, temperature, and pH of the hydrothermal fluids. Because of the varying solubility of different metal ions, Pb2+, Zn2+, and Cu2+ ions are initially precipitated as galena, sphalerite, and chalcopyrite, respectively. With

Simultaneous detection of morphine and codeine in urine samples of heroin addicts using multi-walled carbon nanotubes modified SnO2-Zn2SnO4 nanocomposites paste electrode

NASA Astrophysics Data System (ADS)

Taei, M.; Hasanpour, F.; Hajhashemi, V.; Movahedi, M.; Baghlani, H.

2016-02-01

The SnO2-Zn2SnO4 nanocomposite was successfully prepared via a simple solid state method. Then, a chemically modified electrode based on incorporating SnO2-Zn2SnO4 into multi-walled carbon nanotube paste matrix (MWCNTs/SnO2-Zn2SnO4/CPE) was prepared for the simultaneous determination of morphine(MO) and codeine (CO). The measurements were carried out by application of differential pulse voltammetry (DPV), cyclic voltammetry, and chronoamperometry. The MWCNTs/SnO2-Zn2SnO4/CPE showed an efficient electrocatalytic activity for the oxidation of MO and CO. The separation of the oxidation peak potential for MO-CO was about 550 mV. The calibration curves obtained for MO and CO were in the ranges of 0.1-310 μmol L-1 and 0.1-600.0 μmol L-1, respectively. The detection limits (S/N = 3) were 0.009 μmol L-1 for both drugs. The method also successfully employed as a selective, simple, and precise method for the determination of MO and CO in pharmaceutical and biological samples.

High-Temperature Photoluminescence of CsPbX 3 (X = Cl, Br, I) Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diroll, Benjamin T.; Nedelcu, Georgian; Kovalenko, Maksym

2017-03-30

Recent synthetic developments have generated intense interest in the use of cesium lead halide perovskite nanocrystals for light-emitting applications. This work presents the photoluminescence (PL) of cesium lead halide perovskite nanocrystals with tunable halide composition recorded as function of temperature from 80 to 550 K. CsPbBr 3 nanocrystals show the highest resilience to temperature while chloride-containing samples show relatively poorer preservation of photoluminescence at elevated temperatures. Thermal cycling experiments show that PL loss of CsPbBr 3 is largely reversible at temperatures below 450 K, but shows irreversible degradation at higher temperatures. Time-resolved measurements of CsPbX 3 samples show an increasemore » in the PL lifetime with temperature elevation, consistent with exciton fission to form free carriers, followed by a decrease in the apparent PL lifetime due to trapping. In conclusion, PL persistence measurements and time-resolved spectroscopies implicate thermally assisted trapping, most likely to halogen vacancy traps, as the mechanism of reversible PL loss.« less

Behaviors of Zn2GeO4 under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Shu-Wen, Yang; Fang, Peng; Wen-Tao, Li; Qi-Wei, Hu; Xiao-Zhi, Yan; Li, Lei; Xiao-Dong, Li; Duan-Wei, He

2016-07-01

The structural stability of Zn2GeO4 was investigated by in-situ synchrotron radiation angle dispersive x-ray diffraction. The pressure-induced amorphization is observed up to 10 GPa at room temperature. The high-pressure and high-temperature sintering experiments and the Raman spectrum measurement firstly were performed to suggest that the amorphization is caused by insufficient thermal energy and tilting Zn-O-Ge and Ge-O-Ge bond angles with increasing pressure, respectively. The calculated bulk modulus of Zn2GeO4 is 117.8 GPa from the pressure-volume data. In general, insights into the mechanical behavior and structure evolution of Zn2GeO4 will shed light on the micro-mechanism of the materials variation under high pressure and high temperature. Project supported by the Joint Fund of the National Natural Science Foundation of China and Chinese Academy of Sciences (Grant No. U1332104).

High temperature neutron powder diffraction study of the Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lemoine, Pierric, E-mail: pierric.lemoine@univ-rennes1.fr; Bourgès, Cédric; Barbier, Tristan

Ternary copper-containing sulfides Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu{sub 12}Sb{sub 4}S{sub 13} decomposes above ≈792 K into Cu{sub 3}SbS{sub 3}, and (ii) Cu{sub 4}Sn{sub 7}S{sub 16} decomposes above ≈891 K into Sn{sub 2}S{sub 3} and amore » copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu{sub 3}SnS{sub 4} stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu{sub 12}Sb{sub 4}S{sub 13} are in fair agreement with recent published data, the decomposition behavior of Cu{sub 4}Sn{sub 7}S{sub 16} differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu{sub 4}Sn{sub 7}S{sub 16} and tetrahedrite Cu{sub 12}Sb{sub 4}S{sub 13} phases at 300 K, and for the high temperature form of skinnerite Cu{sub 3}SbS{sub 3} at 843 K. - Graphical abstract: In situ neutron powder diffraction data (heating rate of 2.5 K/min) indicates that (i) the ternary Cu{sub 12}Sb{sub 4}S{sub 13} phase is stable up to 792 K and decomposes at higher temperature into Cu{sub 3}SbS{sub 3} and Cu{sub 1.5}Sb{sub 0.5}S{sub 2}, and (ii) the Cu{sub 4}Sn{sub 7}S{sub 16} phase is stable up to 891 K and decomposes at higher temperature into Sn{sub 2}S{sub 3} and a cubic phase of sphalerite ZnS-type structure. Sulfur volatilization likely occurs in order to balance the overall stoichiometry.« less

Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe

NASA Technical Reports Server (NTRS)

Fripp, Archibald L.; Debnam, William J.; Rosch, William R.; Baker, N. R.; Narayanan, R.

1999-01-01

The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USMP-3) and on USMP-4 Space Shuttle flights in February, 1996, and November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. Lead tin telluride is an alloy of PbTe and SnTe. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (>6 micron) infrared detectors and lasers. Observations and experimental methods of crystal growth of PbSnTe on both Space Shuttle Flights are presented.

Contents and leachability of heavy metals (Pb, Cu, Sb, Zn, As) in soil at the Pantex firing range, Amarillo, Texas.

PubMed

Basunia, S; Landsberger, S

2001-10-01

Pantex firing range soil samples were analyzed for Pb, Cu, Sb, Zn, and As. One hundred ninety-seven samples were collected from the firing range and vicinity area. There was a lack of knowledge about the distribution of Pb in the firing range, so a random sampling with proportional allocation was chosen. Concentration levels of Pb and Cu in the firing range were found to be in the range of 11-4675 and 13-359 mg/kg, respectively. Concentration levels of Sb were found to be in the range of 1-517 mg/kg. However, the Zn and As concentration levels were close to average soil background levels. The Sn concentration level was expected to be higher in the Pantex firing range soil samples. However, it was found to be below the neutron activation analysis (NAA) detection limit of 75 mg/kg. Enrichment factor analysis showed that Pb and Sb were highly enriched in the firing range with average magnitudes of 55 and 90, respectively. Cu was enriched approximately 6 times more than the usual soil concentration levels. Toxicity characteristic leaching procedure (TCLP) was carried out on size-fractionated homogeneous soil samples. The concentration levels of Pb in leachates were found to be approximately 12 times higher than the U.S. Environmental Protection Agency (EPA) regulatory concentration level of 5 mg/L. Sequential extraction (SE) was also performed to characterize Pb and other trace elements into five different fractions. The highest Pb fraction was found with organic matter in the soil.

Cation/Anion Substitution in Cu2ZnSnS4 for Improved Photovoltaic Performance

PubMed Central

Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Jangid, Manoj K.; Bahadur, D.; Medhekar, N. V.; Aslam, M.

2016-01-01

Cations and anions are replaced with Fe, Mn, and Se in CZTS in order to control the formations of the secondary phase, the band gap, and the micro structure of Cu2ZnSnS4. We demonstrate a simplified synthesis strategy for a range of quaternary chalcogenide nanoparticles such as Cu2ZnSnS4 (CZTS), Cu2FeSnS4 (CFTS), Cu2MnSnS4 (CMTS), Cu2ZnSnSe4 (CZTSe), and Cu2ZnSn(S0.5Se0.5)4 (CZTSSe) by thermolysis of metal chloride precursors using long chain amine molecules. It is observed that the crystal structure, band gap and micro structure of the CZTS thin films are affected by the substitution of anion/cations. Moreover, secondary phases are not observed and grain sizes are enhanced significantly with selenium doping (grain size ~1 μm). The earth-abundant Cu2MSnS4/Se4 (M = Zn, Mn and Fe) nanoparticles have band gaps in the range of 1.04–1.51 eV with high optical-absorption coefficients (~104 cm−1) in the visible region. The power conversion efficiency of a CZTS solar cell is enhanced significantly, from 0.4% to 7.4% with selenium doping, within an active area of 1.1 ± 0.1 cm2. The observed changes in the device performance parameters might be ascribed to the variation of optical band gap and microstructure of the thin films. The performance of the device is at par with sputtered fabricated films, at similar scales. PMID:27748406

Comparison of sticking probabilities of metal atoms in magnetron sputtering deposition of CuZnSnS films

NASA Astrophysics Data System (ADS)

Sasaki, K.; Kikuchi, S.

2014-10-01

In this work, we compared the sticking probabilities of Cu, Zn, and Sn atoms in magnetron sputtering deposition of CZTS films. The evaluations of the sticking probabilities were based on the temporal decays of the Cu, Zn, and Sn densities in the afterglow, which were measured by laser-induced fluorescence spectroscopy. Linear relationships were found between the discharge pressure and the lifetimes of the atom densities. According to Chantry, the sticking probability is evaluated from the extrapolated lifetime at the zero pressure, which is given by 2l0 (2 - α) / (v α) with α, l0, and v being the sticking probability, the ratio between the volume and the surface area of the chamber, and the mean velocity, respectively. The ratio of the extrapolated lifetimes observed experimentally was τCu :τSn :τZn = 1 : 1 . 3 : 1 . This ratio coincides well with the ratio of the reciprocals of their mean velocities (1 /vCu : 1 /vSn : 1 /vZn = 1 . 00 : 1 . 37 : 1 . 01). Therefore, the present experimental result suggests that the sticking probabilities of Cu, Sn, and Zn are roughly the same.

Soil heavy metal pollution and risk assessment associated with the Zn-Pb mining region in Yunnan, Southwest China.

PubMed

Cheng, Xianfeng; Danek, Tomas; Drozdova, Jarmila; Huang, Qianrui; Qi, Wufu; Zou, Liling; Yang, Shuran; Zhao, Xinliang; Xiang, Yungang

2018-03-07

The environmental assessment and identification of sources of heavy metals in Zn-Pb ore deposits are important steps for the effective prevention of subsequent contamination and for the development of corrective measures. The concentrations of eight heavy metals (As, Cd, Cr, Cu, Hg, Ni, Pb, and Zn) in soils from 40 sampling points around the Jinding Zn-Pb mine in Yunnan, China, were analyzed. An environmental quality assessment of the obtained data was performed using five different contamination and pollution indexes. Statistical analyses were performed to identify the relations among the heavy metals and the pH in soils and possible sources of pollution. The concentrations of As, Cd, Pb, and Zn were extremely high, and 23, 95, 25, and 35% of the samples, respectively, exceeded the heavy metal limits set in the Chinese Environmental Quality Standard for Soils (GB15618-1995, grade III). According to the contamination and pollution indexes, environmental risks in the area are high or extremely high. The highest risk is represented by Cd contamination, the median concentration of which exceeds the GB15618-1995 limit. Based on the combination of statistical analyses and geostatistical mapping, we identified three groups of heavy metals that originate from different sources. The main sources of As, Cd, Pb, Zn, and Cu are mining activities, airborne particulates from smelters, and the weathering of tailings. The main sources of Hg are dust fallout and gaseous emissions from smelters and tailing dams. Cr and Ni originate from lithogenic sources.

Comparison of Extensive Thermal Cycling Effects on Microstructure Development in Micro-alloyed Sn-Ag-Cu Solder Joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Iver E.; Boesenberg, Adam; Harringa, Joel

2011-09-28

Pb-free solder alloys based on the Sn-Ag-Cu (SAC) ternary eutectic have promise for widespread adoption across assembly conditions and operating environments, but enhanced microstructural control is needed. Micro-alloying with elements such as Zn was demonstrated for promoting a preferred solidification path and joint microstructure earlier in simple (Cu/Cu) solder joints studies for different cooling rates. This beneficial behavior now has been verified in reworked ball grid array (BGA) joints, using dissimilar SAC305 (Sn-3.0Ag-0.5Cu, wt.%) solder paste. After industrial assembly, BGA components joined with Sn-3.5Ag-0.74Cu-0.21Zn solder were tested in thermal cycling (-55 C/+125 C) along with baseline SAC305 BGA joints beyondmore » 3000 cycles with continuous failure monitoring. Weibull analysis of the results demonstrated that BGA components joined with SAC + Zn/SAC305 have less joint integrity than SAC305 joints, but their lifetime is sufficient for severe applications in consumer, defense, and avionics electronic product field environments. Failure analysis of the BGA joints revealed that cracking did not deviate from the typical top area (BGA component side) of each joint, in spite of different Ag3Sn blade content. Thus, SAC + Zn solder has not shown any advantage over SAC305 solder in these thermal cycling trials, but other characteristics of SAC + Zn solder may make it more attractive for use across the full range of harsh conditions of avionics or defense applications.« less

Structural and photocatalytic studies on pure and Sn ion doped ZnO-graphene nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beura, Rosalin; Thangadurai, P., E-mail: thangaduraip.nst@pondiuni.edu.in

2016-05-23

Graphene based metal oxide nanocomposites have been widely used as a photocatalyst for the treatment of water pollutants. This work demonstrates the synthesis of graphene composite with pure and Sn ion doped-ZnO and their photocatalytic properties are reported. Structural studies were carried out by X-ray diffraction and Raman spectroscopy to confirm the formation of the nanocomposites. Microstructure was characterized by scanning electron microscopy showing rod shaped ZnO and the layer structured graphene in the ZnO-graphene composite. In comparison with the undoped ZnO-graphene composite, the Sn ion doped ZnO-graphene composite have shown better degradation of methyl orange dye that is aboutmore » 99% of degradation. Band gap of the composite materials was calculated to be 3.36 eV from the UV-Vis result.« less

High performance humidity sensor and photodetector based on SnSe nanorods

NASA Astrophysics Data System (ADS)

Pawbake, Amit S.; Jadkar, Sandesh R.; Late, Dattatray J.

2016-10-01

Tin selenide (SnSe) nanorods were synthesized using a one-step solvothermal route and their humidity sensing and photodetection performance at room temperature were investigated. The results depict that SnSe nanorod-based humidity and photosensors have good long-term stability, are highly sensitive and have fast response and recovery times. In the case of the humidity sensor it was observed that the resistance of the films decreased with increasing relative humidity (RH). The humidity sensing behaviors were investigated in the range 11-97% RH at room temperature. A response time of ˜68 s and recovery time of ˜149 s were observed for the humidity sensor. The photosensing behavior showed typical response /recovery times of ˜3 s with highly reproducible behavior.

L2₁ and XA Ordering Competition in Hafnium-Based Full-Heusler Alloys Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb).

PubMed

Wang, Xiaotian; Cheng, Zhenxiang; Wang, Wenhong

2017-10-20

For theoretical designing of full-Heusler based spintroinc materials, people have long believed in the so-called Site Preference Rule (SPR). Very recently, according to the SPR, there are several studies on XA-type Hafnium-based Heusler alloys X₂YZ, i.e., Hf₂VAl, Hf₂CoZ (Z = Ga, In) and Hf₂CrZ (Z = Al, Ga, In). In this work, a series of Hf₂-based Heusler alloys, Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb), were selected as targets to study the site preferences of their atoms by first-principle calculations. It has been found that all of them are likely to exhibit the L2₁-type structure instead of the XA one. Furthermore, we reveal that the high values of spin-polarization of XA-type Hf₂VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb) alloys have dropped dramatically when they form the L2₁-type structure. Also, we prove that the electronic, magnetic, and physics nature of these alloys are quite different, depending on the L2₁-type or XA-type structures.

Magnetic and magnetocaloric properties of Gd2In0.8X0.2 compounds (X=Al, Ga, Sn, Pb)

NASA Astrophysics Data System (ADS)

Tencé, Sophie; Chevalier, Bernard

2016-02-01

We show that it is possible to replace in Gd2In some amount of In by X=Al, Ga, Sn and Pb to obtain Gd2In1-xXx samples after melting. The magnetic and magnetocaloric properties of the Gd2In0.8X0.2 intermetallic compounds have been investigated through dc magnetization measurements. We evidence that the substitution of Al and Ga for In barely changes the Curie temperature TC but decreases the second magnetic transition temperature T‧ which corresponds to the transition from a ferromagnetic to an antiferromagnetic state. On the other hand, the substitution of Sn and Pb for In strongly increases TC and changes the nature or even suppresses the transition at lower temperature. This magnetic behavior gives rise to an interesting way to tune the Curie temperature near room temperature without diluting the Gd network and thus to modify the magnetocaloric effect in Gd2In1-xXx compounds.

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

PubMed Central

2014-01-01

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

Pb isotopic constraints on the formation of the Dikulushi Cu-Pb-Zn-Ag mineralisation, Kundelungu Plateau (Democratic Republic of Congo)

NASA Astrophysics Data System (ADS)

Haest, Maarten; Schneider, Jens; Cloquet, Christophe; Latruwe, Kris; Vanhaecke, Frank; Muchez, Philippe

2010-04-01

Base metal-Ag mineralisation at Dikulushi and in other deposits on the Kundelungu Plateau (Democratic Republic of Congo) developed during two episodes. Subeconomic Cu-Pb-Zn-Fe polysulphide ores were generated during the Lufilian Orogeny (c. 520 Ma ago) in a set of E-W- and NE-SW-oriented faults. Their lead has a relatively unradiogenic and internally inhomogeneous isotopic composition (206Pb/204Pb = 18.07-18.49), most likely generated by mixing of Pb from isotopically heterogeneous clastic sources. These sulphides were remobilised and enriched after the Lufilian Orogeny, along reactivated and newly formed NE-SW-oriented faults into a chalcocite-dominated Cu-Ag mineralisation of high economic interest. The chalcocite samples contain only trace amounts of lead and show mostly radiogenic Pb isotope signatures that fall along a linear trend in the 207Pb/204Pb vs. 206Pb/204Pb diagram (206Pb/204Pb = 18.66-23.65; 207Pb/204Pb = 15.72-16.02). These anomalous characteristics reflect a two-stage evolution involving admixture of both radiogenic lead and uranium during a young fluid event possibly c. 100 Ma ago. The Pb isotope systematics of local host rocks to mineralisation also indicate some comparable young disturbance of their U-Th-Pb systems, related to the same event. They could have provided Pb with sufficiently radiogenic compositions that was added to less radiogenic Pb remobilised from precursor Cu-Pb-Zn-Fe polysulphides, whereas the U most likely originated from external sources. Local metal sources are also suggested by the 208Pb/204Pb-206Pb/204Pb systematics of combined ore and rock lead, which indicate a pronounced and diversified lithological control of the immediate host rocks on the chalcocite-dominated Cu-Ag ores. The Pb isotope systematics of polysulphide mineralisation on the Kundelungu Plateau clearly record a diachronous evolution.

Microwave assisted synthesis of porous ZnO/SnS heterojunction and its application in visible light degradation of ciprofloxacin

NASA Astrophysics Data System (ADS)

Makama, A. B.; Salmiaton, A.; Saion, E. B.; Choong, T. S. Y.; Abdullah, N.

2016-07-01

Porous ZnO/SnS heterojunctions were successfully synthesized via microwave-assisted heating of aqueous solutions containing different amounts of SnS precursors (SnCl2 and Na2S) in the presence of fixed amount of ZnCO3 nanoparticles. The experimental results revealed that the heterojunctions exhibited much higher visible light-driven photocatalytic activity for the degradation of the ciprofloxacin than pure SnS nanocrystals. The photocatalytic degradation efficiency (1-Ct/C0) of the pollutant for the most active heterogeneous nanostructure is about four times more efficient than pure SnS. The enhanced photocatalytic efficiency is ascribed to the synergic effect of high photon absorption and reduction in the recombination of electrons and holes because of efficient separation and electron transfer from the SnS to ZnO nanoparticles.

Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

DOE PAGES

Guo, Shaojun; Andrew F. Fidler; He, Kai; ...

2015-11-06

In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead tomore » elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.« less

Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb 1-xSn xTe

DOE PAGES

Zhong, Ruidan; He, Xugang; Schneeloch, J. A.; ...

2015-05-29

Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb 1-xSn xTe compounds that manifest huge bulk resistivities together with evidence consistent with the topological character of the surface states for x ≳ 0.35, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determinemore » the resistivity for temperatures beyond 20 K.« less

[Stabilization Treatment of Pb and Zn in Contaminated Soils and Mechanism Studies].

PubMed

Xie, Wei-qiang; Li, Xiao-mingi; Chen, Can; Chen, Xun-feng; Zhong, Yu; Zhong, Zhen-yu; Wan, Yong; Wang, Yan

2015-12-01

In the present work, the combined application of potassium dihydrogen phosphate, quick lime and potassium chloride was used to immobilize the Pb and Zn in contaminated soils. The efficiency of the process was evaluated through leaching tests and Tessier sequential extraction procedure. The mechanism of stabilization was analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM) to reveal the mechanism of stabilization. The results showed that the stabilizing efficiency of Pb contaminated soils was above 80% and the leaching concentrations of Pb, Zn were far below the threshold when the ratio of exogenous P and soil (mol · mol⁻¹) was 2:1-4: 1, the dosing ratio of CaO was 0.1%-0.5% ( mass fraction) and the dosage of potassium chloride was 0.02-0. 04 mol. Meanwhile, Pb and Zn in soil were transformed from the exchangeable fraction into residual fraction, which implied that the migration of Pb, Zn in soil could be confined by the stabilization treatment. XRD and SEM analysis revealed that Ca-P-Pb precipitation, lead orthophosphate [PbHP0₄, Pb₃ (PO₄)₂], pyromorphite (Pb-PO₄-Cl/OH) and mixed heavy metal deposits (Fe-PO₄- Ca-Pb-Zn-OH) could be formed after solidification/stabilization in which Pb and Zn could be wrapped up to form a solidified composition and to prevent leaching.

The salen based chemosensors for highly selective recognition of Zn2+ ion.

PubMed

Zhu, Wenkai; Du, LongChao; Li, Wensheng; Zuo, Jinyan; Shan, Jingrui

2018-06-03

Two novel salen based chemosensors have been successfully synthesized. UV-vis absorption, fluorescence emission spectroscopy and cyclic voltammetry (CV) were exploited to investigate their recognition toward various metal ions, including Na + , K + , Mg 2+ , Al 3+ , Zn 2+ , Ag + , Pb 2+ , Co 2+ , Li + , Ba 2+ , Ca 2+ , Cd 2+ , La 3+ , Cu 2+ and Mn 2+ ions. The results indicated that the sensor L1 and L2 exhibited highly selective and sensitive recognition for Zn 2+ ions. The binding stoichiometry ratio of L1-Zn 2+ /L2-Zn 2+ were recognized as 4:1 by the method of Job's plot. Meanwhile, this investigation is confirmed by 1 H NMR. These results indicated that L1 and L2 can be applied as chemosensor for the detection of Zn 2+ ion. Copyright © 2018 Elsevier B.V. All rights reserved.

Immobilized-free miniaturized electrochemical sensing system for Pb2+ detection based on dual Pb2+-DNAzyme assistant feedback amplification strategy.

PubMed

Cai, Wei; Xie, Shunbi; Zhang, Jin; Tang, Dianyong; Tang, Ying

2018-06-08

We presented a novel dual-DNAzyme feedback amplification (DDFA) strategy for Pb 2+ detection based on a micropipette tip-based miniaturized homogeneous electrochemical device. The DDFA system involves two rolling circle amplification (RCA) processes in which two circular DNA templates (C1 and C2) have been designed with a Pb 2+ -DNAzyme sequence (8-17 DNAzyme, anti-GR-5 DNAzyme) and an antisense sequence of G-quadruplex. And a linear DNA (L-DNA), which consists of a primer sequence and a Pb 2+ -DNAzyme substrate sequence, could hybridize with C1 and C2 to form two DNA complexes. In presence of Pb 2+ , the Pb 2+ -DNAzyme exhibited excellent cleavage specificity toward the substrate sequence in L-DNA, leaving primer sequence to trigger two paths of RCA process and finally resulting in massive long nanosolo DNA strands with reduplicated G-quadruplex sequences. And then, methylene blue (MB) could selectively intercalate into G-quadruplex to reduce the free MB concentration in the solution. Thereafter, a carbon fiber microelectrode-based miniaturized electrochemical device was constructed to record the decrease of electrochemical signal due to the much lower diffusion rate of MB/G-quadruplex complex than that of free MB. Therefore, the concentration of Pb 2+ could be correctively and sensitively determined in a homogeneous solution by combining DDFA with miniaturized electrochemical device. This protocol not only exhibited high selectivity and sensitivity toward Pb 2+ with a detection limit of 0.048 pM, but also reduced sample volume to 10 µL. In addition, this sensing system has been successfully applied to Pb 2+ detection in Yangtze River with desirable quantitative manners, which matched well with the atomic absorption spectrometry (AAS). Copyright © 2018 Elsevier B.V. All rights reserved.

Room temperature electrical properties of solution derived p-type Cu{sub 2}ZnSnS{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Goutam Kumar; Dixit, Ambesh, E-mail: ambesh@iitj.ac.in

2016-05-06

Electrical properties of solution processed Cu{sub 2}ZnSnS{sub 4} (CZTS) compound semiconductor thin film structures on molybdenum (Mo) coated glass substrates are investigated using Mott-Schottky and Impedance spectroscopy measurements at room temperature. These measurements are carried out in sodium sulfate (Na{sub 2}SO{sub 4}) electrolytic medium at pH ~ 9.5. The inversion/depletion/accumulation regions are clearly observed in CZTS semiconductor −Na{sub 2}SO{sub 4} electrolyte interface and measured flat band potential is ~ −0.27 V for CZTS thin film electrode. The positive slope of the depletion region confirms the intrinsic p-type characteristics of CZTS thinfilms with ~ 2.5× 10{sup 19} holes/m{sup 3}. The high frequencymore » impedance measurements showed ~ 30 Ohm electrolyte resistance for the investigated configuration.« less

Luminescent high temperature sensor based on the CdSe/ZnS quantum dot thin film

NASA Astrophysics Data System (ADS)

Wang, He-lin; Yang, Ai-jun; Sui, Cheng-hua

2013-11-01

A high temperature sensor based on the multi-parameter temperature dependent characteristic of photoluminescence (PL) of quantum dot (QD) thin film is demonstrated by depositing the CdSe/ZnS core/shell QDs on the SiO2 glass substrates. The variations of the intensity, the peak wavelength and the full width at half maximum (FWHM) of PL spectra with temperature are studied experimentally and theoretically. The results indicate that the peak wavelength of the PL spectra changes linearly with temperature, while the PL intensity and FWHM vary exponentially for the temperature range from 30 °C to 180 °C. Using the obtained temperature dependent optical parameters, the resolution of the designed sensor can reach 0.1 nm/°C.

Internal friction in particulate composites of (x)Mn0.4Zn0.6Fe2O4 –(1-x)PbZr0.53Ti0.47O3 in the vicinity of the structural phase transition temperatures

NASA Astrophysics Data System (ADS)

Kalgin, A. V.; Gridnev, S. A.

2018-03-01

The internal friction in particulate ceramic composites of (x)Mn0.4Zn0.6Fe2O4 –(1-x)PbZr0.53Ti0.47O3 (x = 0, 0.1, 0.2, 0.3, 0.4, and 0.6) in the vicinity of the phase transition temperatures was studied. We observed the influence of the composite composition on the exponent that characterizes a temperature dependence of the internal friction near the ferroelectric Curie point. The reason for this influence is shown to be the doping of the PbZr0.53Ti0.47O3 ferroelectric phase with atoms of the Mn04Zn0.6Fe2O4 ferrite phase that occurs during high- temperature sintering of composite samples.

Fabrication of PbS quantum dots and their applications in solar cells based on ZnO nanorod arrays

NASA Astrophysics Data System (ADS)

Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

2018-05-01

An efficient, inexpensive and large area scalable approach based on sol-gel technique is presented to fabricate quantum dots (QDs) of PbS. Size of the QDs is tuned by the varying the bath concentrations in the range of 50-200 mM. Transmission electron microscopy (TEM) studies confirm the growth of spherically shaped ˜5.6 nm QDs at 50 mM bath concentration. The optical bandgap of the QDs is found to be ˜0.9 eV and corresponds to the size obtained from TEM studies. ZnO/PbS solar cells are fabricated by sensitizing the ZnO nanorods with PbS QDs. The fabricated solar cells demonstrate the highest open circuit voltage ˜200 mV and short circuit current density ˜0.81 µA/cm2.

Formation of highly preferred orientation of β-Sn grains in solidified Cu/SnAgCu/Cu micro interconnects under temperature gradient effect

NASA Astrophysics Data System (ADS)

Zhao, N.; Zhong, Y.; Dong, W.; Huang, M. L.; Ma, H. T.; Wong, C. P.

2017-02-01

β-Sn grain orientation and configuration are becoming crucial factors to dominate the lifetime of solder interconnects in three-dimensional integrated circuit packaging. In this paper, we found that a temperature gradient during solidification significantly dominated the orientation and configuration of the final β-Sn grains in Cu/SnAgCu/Cu micro interconnects. Being different from the random orientations and growth fronts meeting or cyclic twin boundary forming near the center after homogeneous temperature bonding, the β-Sn grains solidified under a certain temperature gradient were observed to follow a highly preferred orientation with their c-axis departing from the direction of temperature gradient by about 45°-88°. Meanwhile, these preferred oriented β-Sn grains consisted of low angle grain boundary structures with misorientation in the range of 0°-15°. The mechanism was explained in terms of the anisotropy and directional growth of β-Sn grains. The results pave the way for grain orientation control in 3D packaging technology.

In situ synchrotron study of electromigration induced grain rotations in Sn solder joints

NASA Astrophysics Data System (ADS)

Shen, Hao; Zhu, Wenxin; Li, Yao; Tamura, Nobumichi; Chen, Kai

2016-04-01

Here we report an in situ study of the early stage of microstructure evolution induced by electromigration in a Pb-free β-Sn based solder joint by synchrotron polychromatic X-ray microdiffraction. With this technique, crystal orientation evolution is monitored at intragranular levels with high spatial and angular resolution. During the entire experiment, no crystal growth is detected, and rigid grain rotation is observed only in the two grains within the current crowding region, where high density and divergence of electric current occur. Theoretical calculation indicates that the trend of electrical resistance drop still holds under the present conditions in the grain with high electrical resistivity, while the other grain with low resistivity reorients to align its a-axis more parallel with the ones of its neighboring grains. A detailed study of dislocation densities and subgrain boundaries suggests that grain rotation in β-Sn, unlike grain rotation in high melting temperature metals which undergo displacive deformation, is accomplished via diffusional process mainly, due to the high homologous temperature.

In situ synchrotron study of electromigration induced grain rotations in Sn solder joints

DOE PAGES

Shen, Hao; Zhu, Wenxin; Li, Yao; ...

2016-04-18

In this paper we report an in situ study of the early stage of microstructure evolution induced by electromigration in a Pb-free β-Sn based solder joint by synchrotron polychromatic X-ray microdiffraction. With this technique, crystal orientation evolution is monitored at intragranular levels with high spatial and angular resolution. During the entire experiment, no crystal growth is detected, and rigid grain rotation is observed only in the two grains within the current crowding region, where high density and divergence of electric current occur. Theoretical calculation indicates that the trend of electrical resistance drop still holds under the present conditions in themore » grain with high electrical resistivity, while the other grain with low resistivity reorients to align its a-axis more parallel with the ones of its neighboring grains. A detailed study of dislocation densities and subgrain boundaries suggests that grain rotation in β-Sn, unlike grain rotation in high melting temperature metals which undergo displacive deformation, is accomplished via diffusional process mainly, due to the high homologous temperature.« less

Enzyme-free and label-free ultra-sensitive colorimetric detection of Pb(2+) using molecular beacon and DNAzyme based amplification strategy.

PubMed

Yun, Wen; Cai, Dingzhou; Jiang, JiaoLai; Zhao, Pengxiang; Huang, Yu; Sang, Ge

2016-06-15

An enzyme-free and label-free colorimetric Pb(2+) sensor based on DNAzyme and molecular beacon (MB) has been developed and demonstrated by recycle using enzyme strand for signal amplification. The substrate strand DNA (S-DNA) of DNAzyme could be converted into MB structure with base pairs of stem part at the both ends. The MB could hybridize with enzyme strand DNA (E-DNA) to form DNAzyme, and be activated and cleaved in the presence of Pb(2+). The cleaved MB is much less stable, releasing from the DNAzyme as two product pieces. The product pieces of MB are flexible and could bind to unmodified AuNPs to effectively stabilize them against salt-induced aggregation. Then, the E-DNA is liberated to catalyze the next reaction and amplify the response signal. By taking advantage of repeated using of E-DNA, our proposed method exhibited high sensitive for Pb(2+) detection in a linear range from 0.05 to 5 nM with detection limit of 20 pM by UV-vis spectrometer. Moreover, this method was also used for determination of Pb(2+) in river water samples with satisfying results. Importantly, this strategy could reach high sensitivity without any modification and complex enzymatic or hairpins based amplification procedures. Copyright © 2016 Elsevier B.V. All rights reserved.

Effects of High-Temperature Treatment on the Reaction Between Sn-3%Ag-0.5%Cu Solder and Sputtered Ni-V Film on Ferrite Substrate

NASA Astrophysics Data System (ADS)

Shen, Xiaohu; Jin, Hao; Dong, Shurong; Wong, Hei; Zhou, Jian; Guo, Zhaodi; Wang, Demiao

2012-11-01

We have demonstrated a novel sputtering method for lead-free thin metal films on ferrite substrates for surface-mount inductor applications. In a surface-mounting process, the cladding of enameled wire needs to be burnt off at high temperature, which requires the devices to withstand a high-temperature reliability test at 420°C for 10 s. There are no reports that a sputtered film of thickness less than 6 μm can withstand this test. In this work, we used Ag/Ni-7 wt.%V double metal layers for the metallization. The dissolution of Ni-7 wt.%V in Sn-3%Ag-0.5%Cu lead-free solder at various temperatures was studied in detail. Scanning electron microscopy with energy-dispersive x-ray spectroscopy was used to investigate the interfacial reaction between the sputtered films and the solder. The intermetallic compounds are mainly (Cu,Ni)6Sn5 at 250°C; however, (Ni,Cu)3Sn4 becomes the predominant composition at 420°C. In addition, although outdiffusion of V atoms from the Ni-V layer was observed, its effect on the intermetallic compound (IMC) was insignificant. We further confirmed that the proposed metallization is able to pass the aforementioned high-temperature reliability test.

Ferroic phase transition of tetragonal Pb0.6-xCaxBi0.4(Ti0.75Zn0.15Fe0.1)O3 ceramics: Factors determining Curie temperature

NASA Astrophysics Data System (ADS)

Yu, Jian; An, Fei-fei; Cao, Fei

2014-05-01

In this paper, ferroelectric phase transitions of Pb0.6-xCaxBi0.4(Ti0.75Zn0.15Fe0.1)O3 with x ≤ 0.20 ceramics were experimentally measured and a change from first-order to relaxor was found at a critical composition x ˜ 0.19. With increasing Ca content of x ≤ 0.18, Curie temperature and tetragonality was found decrease but piezoelectric constant and dielectric constant increase in a quadratic polynomial relationship as a function of x, while the ferroic Curie temperature and ferroelastic ordering parameter of tetragonality are correlated in a quadratic polynomial relationship. Near the critical composition of ferroic phase transition from first-order to relaxor, the Pb0.42Ca0.18Bi0.4(Ti0.75Zn0.15Fe0.1)O3 and 1 mol % Nb + 0.5 mol % Mg co-doped Pb0.44Ca0.16Bi0.4(Ti0.75Zn0.15Fe0.1)O3 ceramics exhibit a better anisotropic piezoelectric properties than those commercial piezoceramics of modified-PbTiO3 and PbNb2O6. At last, those factors including reduced mass of unit cell, mismatch between cation size and anion cage size, which affect ferroic Curie temperature and ferroelastic ordering parameter (tetragonality) of tetragonal ABO3 perovskites, are analyzed on the basis of first principle effective Hamiltonian and the reduced mass of unit cell is argued a more universal variable than concentration to determine Curie temperature in a quadratic polynomial relationship over various perovskite-structured solid solutions.

Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

NASA Astrophysics Data System (ADS)

Zheng, Jun; Liu, Zhi; Zhang, Yongwang; Zuo, Yuhua; Li, Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming

2018-06-01

Crystalline GeSn thin films with Sn content up to 0.28 were deposited on Sn graded GeSn buffer on a Ge substrate at low temperatures by sputtering epitaxy. The structural properties of the high-Sn content GeSn alloy films were characterized by high resolution transmission electron microscopy and X-ray diffraction. The effect of annealing on the segregation of Sn in the high-Sn content GeSn film was investigated, and both the Ge0.72Sn0.28 and the Ge0.8Sn0.2 films were found to be stable after annealing at temperatures below 400 °C, which meets the needs of thermal budget for future photonic devices fabrication. The present results indicate that sputtering epitaxy is cost-effective method for growing high-Sn GeSn films.

The failure models of Sn-based solder joints under coupling effects of electromigration and thermal cycling

NASA Astrophysics Data System (ADS)

Ma, Limin; Zuo, Yong; Liu, Sihan; Guo, Fu; Wang, Xitao

2013-01-01

Currently, the main concerns of Pb-free solder joints are focusing on electromigration (EM) and thermomechanical fatigue (TMF) problems. Many models have been established to understand the failure mechanisms of the joint under such single test conditions. Based on the fact that almost all microelectronic devices serve in combination conditions of fluctuated temperature and electric current stressing, the coupling effects of EM and TMF on evolution of microstructure and resistance of solder joint had been investigated. The failure models of binary SnBi alloy and ternary SnAgCu (SAC) solder under the coupling stressing were divided into four and three different stages, respectively. The failure mechanisms were dominant by the relationship of phase segregation, polarity effect, phase coarsening, and the coefficient of thermal expansion mismatch. Cracks tend to form and propagate along the interface between intermetallic compound layers and solder matrix in SAC solder. However, grain boundary was considered as the nucleation sites for microcracks in SnBi solder. High current density alleviates the deterioration of solder at the beginning stage of coupling stressing through Joule heating effect. An abrupt jump of resistance could be observed before the failure of the joint. The failure molds were determined by interactions of EM behaviors and TMF damages.

Single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides as promising photocatalysts.

PubMed

Bai, Yujie; Luo, Gaixia; Meng, Lijuan; Zhang, Qinfang; Xu, Ning; Zhang, Haiyang; Wu, Xiuqiang; Kong, Fanjie; Wang, Baolin

2018-05-30

Searching for two-dimensional semiconductor materials that are suitable for visible-light photocatalytic water splitting provides a sustainable solution to deal with the future energy crisis and environmental problems. Herein, based on first-principles calculations, single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides are proposed as efficient photocatalysts for water splitting. Stability analyses show that the single-layer ZnMN2 zinc nitrides exhibit energetic and dynamical stability. The electronic properties reveal that all of the single-layer ZnMN2 zinc nitrides are semiconductors. Interestingly, single-layer ZnSnN2 is a direct band gap semiconductor with a desirable band gap (1.74 eV), and the optical adsorption spectrum confirms its optical absorption in the visible light region. The hydrogen evolution reaction (HER) calculations show that the catalytic activity for single-layer ZnMN2 (M = Ge, Sn) is better than that of single-layer ZnSiN2. Furthermore, the band gaps and band edge positions for the single-layer ZnMN2 zinc nitrides can be effectively tuned by biaxial strain. Especially, single-layer ZnGeN2 can be effectively tuned to match better with the redox potentials of water and enhance the light absorption in the visible light region at a tensile strain of 5%, which is confirmed by the corresponding optical absorption spectrum. Our results provide guidance for experimental synthesis efforts and future searches for single-layer materials suitable for photocatalytic water splitting.

Effects of surface condition on the work function and valence-band position of ZnSnN2

NASA Astrophysics Data System (ADS)

Shing, Amanda M.; Tolstova, Yulia; Lewis, Nathan S.; Atwater, Harry A.

2017-12-01

ZnSnN2 is an emerging wide band gap earth-abundant semiconductor with potential applications in photonic devices such as solar cells, LEDs, and optical sensors. We report the characterization by ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy of reactively radio-frequency sputtered II-IV-nitride ZnSnN2 thin films. For samples transferred in high vacuum, the ZnSnN2 surface work function was 4.0 ± 0.1 eV below the vacuum level, with a valence-band onset of 1.2 ± 0.1 eV below the Fermi level. The resulting band diagram indicates that the degenerate bulk Fermi level position in ZnSnN2 shifts to mid-gap at the surface due to band bending that results from equilibration with delocalized surface states within the gap. Brief (< 10 s) exposures to air, a nitrogen-plasma treatment, or argon-ion sputtering caused significant chemical changes at the surface, both in surface composition and interfacial energetics. The relative band positioning of the n-type semiconductor against standard redox potentials indicated that ZnSnN2 has an appropriate energy band alignment for use as a photoanode to effect the oxygen-evolution reaction.

Structures and bonding of C2X2Y q (X=Si,Ge,Sn,Pb; Y=C,Si,Ge,Sn,Pb; q = +1,0,-1): π-type templates for planar tetracoordinate heavier group 14 atoms

NASA Astrophysics Data System (ADS)

Yu, Shuang; Sui, Jing-jing; Xu, Jing; Ding, Yi-hong

2018-05-01

Contrasting the big family of the planar tetracoordinate carbon (ptC), species featuring the planar tetracoordinate heavier group element M (ptM) have been largely limited. Effective structural frameworks to accommodate such ptM centres are thus highly desired. In the present article, we report an extensive computational study on 60 pentatomic systems C2X2Yq (X=Si,Ge,Sn,Pb; Y=C,Si,Ge,Sn,Pb; q = +1,0,-1) covering both the low and high spin states. Up to 34 systems were shown to have the very low-lying singlet planar tetracoordinate heavier group 14 (ptM with M=Si,Ge,Sn,Pb) structures bearing the 19 (q = +1), 20 (q = 0) and 21 (q = -1) valence electrons (ve). Structural and bonding analysis confirmed the effectiveness of the inherent π-type ligand skeleton XCCX or XCCY that each have several sets of π-bonding orbitals to stabilise the ptM centre. The structural and bonding motifs of these ptMs differ greatly from the classic ptMs, which have the σ-type ligand skeleton, smaller number of valence electrons (≤18ve), and the centre → ligand π-delocalisation.

Structural, optical, and improved field-emission properties of tetrapod-shaped Sn-doped ZnO nanostructures synthesized via thermal evaporation.

PubMed

Zhou, Xiongtu; Lin, Tihang; Liu, Yuhui; Wu, Chaoxing; Zeng, Xiangyao; Jiang, Dong; Zhang, Yong-ai; Guo, Tailiang

2013-10-23

High-quality tetrapod-shaped Sn-doped ZnO (T-SZO) nanostructures have been successfully synthesized via the thermal evaporation of mixed Zn and Sn powder. The effects of the Sn dopant on the morphology, microstructure, optical, and field-emission (FE) properties of T-SZO were investigated. It was found that the growth direction of the legs of T-SZO is parallel to the [0001] crystal c-axis direction and that the incorporation of Sn in the ZnO matrix increases the aspect ratio of the tetrapods, leads to blue shift in the UV region, and considerably improves the FE performance. The results also show that tetrapod cathodes with around a 0.84 atom % Sn dosage have the best FE properties, with a turn-on field of 1.95 V/μm, a current density of 950 μA/cm2 at a field of 4.5 V/μm, and a field-enhancement factor as high as 9556.

Microstructural Evolution of Ni-Sn Transient Liquid Phase Sintering Bond during High-Temperature Aging

NASA Astrophysics Data System (ADS)

Feng, Hongliang; Huang, Jihua; Peng, Xianwen; Lv, Zhiwei; Wang, Yue; Yang, Jian; Chen, Shuhai; Zhao, Xingke