Low temperature grown ZnO@TiO{sub 2} core shell nanorod arrays for dye sensitized solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goh, Gregory Kia Liang; Le, Hong Quang, E-mail: lehq@imre.a-star.edu.sg; Huang, Tang Jiao

High aspect ratio ZnO nanorod arrays were synthesized on fluorine-doped tin oxide glasses via a low temperature solution method. By adjusting the growth condition and adding polyethylenimine, ZnO nanorod arrays with tunable length were successfully achieved. The ZnO@TiO{sub 2} core shells structures were realized by a fast growth method of immersion into a (NH{sub 4}){sub 2}·TiF{sub 6} solution. Transmission electron microscopy, X-ray Diffraction and energy dispersive X-ray measurements all confirmed the existence of a titania shell uniformly covering the ZnO nanorod's surface. Results of solar cell testing showed that addition of a TiO{sub 2} shell to the ZnO nanorod significantlymore » increased short circuit current (from 4.2 to 5.2 mA/cm{sup 2}), open circuit voltage (from 0.6 V to 0.8 V) and fill factor (from 42.8% to 73.02%). The overall cell efficiency jumped from 1.1% for bare ZnO nanorod to 3.03% for a ZnO@TiO{sub 2} core shell structured solar cell with a 18–22 nm shell thickness, a nearly threefold increase. - Graphical abstract: The synthesis process of coating TiO{sub 2} shell onto ZnO nanorod core is shown schematically. A thin, uniform, and conformal shell had been grown on the surface of the ZnO core after immersing in the (NH{sub 4}){sub 2}·TiF{sub 6} solution for 5–15 min. - Highlights: • ZnO@TiO{sub 2} core shell nanorod has been grown on FTO substrate using low temperature solution method. • TEM, XRD, EDX results confirmed the existing of titana shell, uniformly covered rod's surface. • TiO{sub 2} shell suppressed recombination, demonstrated significant enhancement in cell's efficiency. • Core shell DSSC's efficiency achieved as high as 3.03%, 3 times higher than that of ZnO nanorods.« less

The epitaxial growth of wurtzite ZnO films on LiNbO 3 (0 0 0 1) substrates

NASA Astrophysics Data System (ADS)

Yin, J.; Liu, Z. G.; Liu, H.; Wang, X. S.; Zhu, T.; Liu, J. M.

2000-12-01

ZnO epitaxial films were deposited on LiNbO 3 (0 0 0 1) substrates by pulsed laser deposition. The smaller lattice misfit (-8.5%) between ZnO along <1 0 1¯ 0>- direction and LiNbO 3 (0 0 0 1) along <1 1 2¯ 0>- direction, as compared with that in the case of normally used sapphire (0 0 0 1) substrates, favored the epitaxial growth of ZnO films. The transmittance spectra of ZnO films deposited in vacuum after annealed in pure oxygen show a sharp absorption edge at 375.6 nm (E g=3.31 eV) .

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wahab, Rizwan; Ansari, S.G.; Kim, Y.S.

Synthesis of flower-shaped ZnO nanostructures composed of hexagonal ZnO nanorods was achieved by the solution process using zinc acetate dihydrate and sodium hydroxide at very low temperature of 90 deg. C in 30 min. The individual nanorods are of hexagonal shape with sharp tip, and base diameter of about 300-350 nm. Detailed structural characterizations demonstrate that the synthesized products are single crystalline with the wurtzite hexagonal phase, grown along the [0 0 0 1] direction. The IR spectrum shows the standard peak of zinc oxide at 523 cm{sup -1}. Raman scattering exhibits a sharp and strong E{sub 2} mode atmore » 437 cm{sup -1} which further confirms the good crystallinity and wurtzite hexagonal phase of the grown nanostructures. The photoelectron spectroscopic measurement shows the presence of Zn, O, C, zinc acetate and Na. The binding energy ca. 1021.2 eV (Zn 2p{sub 3/2}) and 1044.3 eV (Zn 2p{sub 1/2}), are found very close to the standard bulk ZnO binding energy values. The O 1s peak is found centered at 531.4 eV with a shoulder at 529.8 eV. Room-temperature photoluminescence (PL) demonstrate a strong and dominated peak at 381 nm with a suppressed and broad green emission at 515 nm, suggests that the flower-shaped ZnO nanostructures have good optical properties with very less structural defects.« less

Sodium doping in ZnO crystals

NASA Astrophysics Data System (ADS)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

Controlled growth of c-axis oriented ZnO nanorod array films by electrodeposition method and characterization.

PubMed

Arslan, Andaç; Hür, Evrim; Ilican, Saliha; Caglar, Yasemin; Caglar, Mujdat

2014-07-15

ZnO nanorod array films were deposited from aqueous solution containing different concentrations (1×10(-2) M and 5×10(-3) M) Zn(NO3)2⋅6H2O and C6H12N4 and at different electrodeposition times (i.e., 15 min, 30 min, 60 min, 120 min and 180 min) using chronoamperometry method on p-Si substrate. Surface morphology and crystal structural properties of ZnO films were investigated by XRD and FESEM to select ZnO films which have optimum properties. The highest TC(hkl) value was observed in (002) plane for the film, which is deposited at 1×10(-2) M and 120 min. It is also observed that the highly oriented nanorods in this film are denser. Additionally, the conductivity type was determined by using Mott-Schottky which is electrochemical impedance spectroscopy method (EIS). On the other hand, to investigate the utility of obtained ZnO on p-Si (p-Si/n-ZnO) as supercapacitor electrode active material, the electrochemical storage properties of p-Si/ZnO was studied by electrochemical impedance spectroscopy and repeating chronopotentiometry methods. It is suggested from electrochemical tests results that p-Si/ZnO is a promising electrode materials for supercapacitor applications that required low voltage (<10 V). Rectifiying behavior was observed from the I-V characteristic of nanorod array n-ZnO/p-Si heterojunction diode. The n value, Io and the ϕb were found to be 5.48, 1.93×10(-8) A and 0.75 eV, respectively. Copyright © 2014 Elsevier B.V. All rights reserved.

Nanocrystalline ZnCO3-A novel sorbent for low-temperature removal of H2S.

PubMed

Balichard, Kevin; Nyikeine, Camille; Bezverkhyy, Igor

2014-01-15

The reactivity of a nanocrystalline ZnCO3 toward H2S (0.2vol% in N2/H2 mixture) at 140-180°C was characterized by thermal gravimetric analysis and by breakthrough curves measurements. We have found that under used conditions transformation of ZnCO3 into ZnS is complete and the rate determining step of the sulfidation is the surface reaction. Such behavior is in strike contrast with that of ZnO whose sulfidation is severely limited by diffusion. The higher reactivity of ZnCO3 in comparison with ZnO is attributed to the different microstructure of ZnS layer formed in these materials after a partial sulfidation. As in ZnO-ZnS transformation the molar volume increases (from 14.5 to 23.8cm(3)/mol), a continuous protective ZnS layer is formed hampering the access of H2S to the non reacted ZnO core. By contrast, in ZnCO3-ZnS transformation the molar volume decreases (from 27.9 to 23.8cm(3)/mol), which produces a discontinuous non-protective ZnS layer enabling a complete transformation of ZnCO3 even at 140°C. The higher reactivity of ZnCO3 results in a considerable increase of the breakthrough sulfur capacity of the carbonate in comparison with oxide. The material has therefore a good potential for being used as a disposable sorbent for H2S capture at low temperature. Copyright © 2013 Elsevier B.V. All rights reserved.

A family of entangled coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and auxiliary N-donor ligands: Luminescent sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jun; College of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong 643000; Bai, Chao

Eight Zn(II)-based coordination polymers, namely, [Zn{sub 2}L{sub 2}(2,2’-bipy)]{sub n}·nH{sub 2}O (1), [Zn{sub 2}L{sub 2}(phen)]{sub n}·nH{sub 2}O (2), [ZnL(phen)(H{sub 2}O)]{sub n} (3), [Zn{sub 3}L{sub 3}(4,4’-bipy)]{sub n} (4), [Zn{sub 2}L{sub 2}(4,4’-bipy){sub 2}]{sub n} [Zn{sub 2}L{sub 2}(H{sub 2}O){sub 2}]{sub n}·2nH{sub 2}O (5), [Zn{sub 4}L{sub 4}(bpp){sub 2}]{sub n} (6), [ZnL(bbi){sub 0.5}]{sub n} (7), [ZnL(bpz)]{sub n} (8) (H{sub 2}L=4,4’-([1,2-phenylenebis-(methylene)]bis(oxy))dibenzoic acid, 2,2’-bipy =2,2’-bipyridine, phen =1,10-phenanthroline, 4,4’-bpy=4,4’-bipyridine, bpp =1,3-bis(4-pyridyl)propane, bbi=1,4-bis(imidazol-1-yl)butane, bpz=3,3′,5,5′-tetramethyl-4,4′-bipyrazole), have been hydrothermally synthesized and structurally characterized. 1–8 display various coordination motifs with different entangled forms and conformations due to the effect of the assistant N-donor ligands. The photoluminescent properties of compounds 1–8 in solid statemore » were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu{sup 2+} cations and CrO{sub 4}{sup 2-} anions, as well as detection ability for the different organic solvents and nitro explosives. These results indicated that it could be utilized as a multi-responsive luminescent sensor. Furthermore, compound 3 also shows good chemical resistance to both acidity and alkalinity solutions with pH ranging from 2 to 13. Thus, multi-photofunctionality and fluorescent response to pH have been combined in the 3, which is the first example in the Zn-based hybrid materials. - Graphical abstract: Eight new Zn(II)-based coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and different N-donor ligands have been hydrothermally synthesized through fixing the metal salts and the solvent systems. The photoluminescent properties of complexes 1−8 in solid state were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu{sup 2+} cations and CrO{sub 4}{sup 2-} anions, as well as detection ability for the different organic solvents and nitro explosives, in which indicates it could be utilized as a multi-responsive luminescent sensor. Furthermore, compound 3 also shows good chemical resistance to both acidity and alkalinity solutions with pH ranging from 2 to 13. Thus, multiphotofunctionality and fluorescent response to pH have been combined in the 3, which is the first example in the Zn-based hybrid materials.« less

Physical and electrochemical properties of ZnO films fabricated from highly cathodic electrodeposition potentials

NASA Astrophysics Data System (ADS)

Ismail, Abdul Hadi; Abdullah, Abdul Halim; Sulaiman, Yusran

2017-03-01

The physical and electrochemical properties of zinc oxide (ZnO) film electrode that were prepared electrochemically were studied. ZnO was electrodeposited on ITO glass substrate by applying three different highly cathodic potentials (-1.3 V, -1.5 V, -1.7 V) in a solution containing 70 mM of Zn(NO3)2.xH2O and 0.1 M KCl with bath temperatures of 70 °C and 80 °C. The presence of ZnO was asserted from XRD analysis where the corresponding peaks in the spectra were assigned. SEM images revealed the plate-like hexagonal morphology of ZnO which is in agreement with the XRD analysis. The areal capacitance of the ZnO was observed to increase when the applied electrodeposition potential is increased from -1.3 V to -1.5 V. However, the areal capacitance is found to decrease when the applied electrodeposition potential is further increased to -1.7 V. The resistance of charge transfer (Rct) of the ZnO decreased when the applied electrodeposition potential varies from -1.3 V to -1.7 V due to the decreased particle size of ZnO when more cathodic electrodeposition potential is applied.

Vigrishinite, Zn2Ti4 - x Si4O14(OH,H2O,□)8, a new mineral from the Lovozero alkaline complex, Kola Peninsula, Russia

NASA Astrophysics Data System (ADS)

Pekov, I. V.; Britvin, S. N.; Zubkova, N. V.; Chukanov, N. V.; Bryzgalov, I. A.; Lykova, I. S.; Belakovskiy, D. I.; Pushcharovsky, D. Yu.

2013-12-01

A new mineral vigrishinite, epistolite-group member and first layer titanosilicate with species-defining Zn, was found at Mt. Malyi Punkaruaiv, in the Lovozero alkaline complex, Kola Peninsula, Russia. It occurs in a hydrothermally altered peralkaline pegmatite and is associated with microcline, ussingite, aegirine, analcime, gmelinite-Na, and chabazite-Ca. Vigrishinite forms rectangular or irregularly shaped lamellae up to 0.05 × 2 × 3 cm flattened on [001]. They are typically slightly split and show blocky character. The mineral is translucent to transparent and pale pink, yellowish-pinkish or colorless. The luster is vitreous. The Mohs' hardness is 2.5-3. Vigrishinite is brittle. Cleavage is {001} perfect. D meas = 3.03(2), D calc = 2.97 g/cm3. The mineral is optically biaxial (-), α = 1.755(5), β = 1.82(1), γ = 1.835(8), 2 V meas = 45(10)°, 2 V calc = 50°. IR spectrum is given. The chemical composition (wt %; average of 9 point analyses, H2O is determined by modified Penfield method) is as follows: 0.98 Na2O, 0.30 K2O, 0.56 CaO, 0.05 SrO, 0.44 BaO, 0.36 MgO, 2.09 MnO, 14.39 ZnO, 2.00 Fe2O3, 0.36 Al2O3, 32.29 SiO2, 29.14 TiO2, 2.08 ZrO2, 7.34 Nb2O5, 0.46 F, 9.1 H2O, -0.19 O=F2, total is 101.75. The empirical formula calculated on the basis of Si + Al = 4 is: H7.42(Zn1.30Na0.23Mn0.22Ca0.07Mg0.07K0.05Ba0.02)Σ1.96(Ti2.68Nb0.41Fe{0.18/3+}Zr0.12)Σ3.39(Si3.95Al0.05)Σ4 20.31F0.18. The simplified formula is: Zn2Ti4- x Si4O14(OH,H2O,□)8 ( x < 1). Vigrishinite is triclinic, space group P , a = 8.743(9), b = 8.698(9), c = 11.581(11)Å, α = 91.54(8)°, β = 98.29(8)°, γ = 105.65(8)°, V = 837.2(1.5) Å3, Z = 2. The strongest reflections in the X-ray powder pattern ( d, Å, - I[ hkl]) are: 11.7-67[001], 8.27-50[100], 6.94-43[01, 10], 5.73-54[11, 002], 4.17-65[020, 2, 200], and 2.861-100[30, 22, 004, 11]. The crystal structure model was obtained on a single crystal, R = 0.171. Vigrishinite and murmanite are close in the structure of the TiSiO motif, but strongly differ from each other in part of large cations and H-bearing groups. Vigrishinite is named in honor of Viktor G. Grishin (b. 1953), a Russian amateur mineralogist and mineral collector, to pay tribute to his contribution to the mineralogy of the Lovozero Complex. The type specimen is deposited in the Fersman Mineralogical Museum of Russian Academy of Sciences, Moscow.

Facile synthesis of layered V2O5/ZnV2O6 heterostructures with enhanced sensing performance

NASA Astrophysics Data System (ADS)

Xiao, Bingxin; Huang, Hao; Yu, Xiantong; Song, Jun; Qu, Junle

2018-07-01

A low-cost and environment-friendly hydrothermal approach was used for the synthesis of layered V2O5/ZnV2O6 hybrid nanobelts. Characterization results indicate that the V2O5/ZnV2O6 nanobelts are composed of several thin layers. Additionally, it is illustrated that the chemical formation process of V2O5/ZnV2O6 occurred in the solution. The synthesized V2O5/ZnV2O6 heterostructures were subjected to detailed ethanol sensing tests. Results demonstrate that V2O5/ZnV2O6 based sensor shows about 4.3 of response to 100 ppm of ethanol gases, reveals relatively high sensitivity at relatively low optimal operating temperature of 240 °C, as well as relatively good selectivity and stability. The performance of the sensor is better than most of reported vanadium based sensing devices. Thus this work offers a new insight into the rational regulation of vanadium based sensing devices.

Photocatalytic study and superparamagnetic nature of Zn-doped MgFe2O4 colloidal size nanocrystals prepared by solvothermal reflux method.

PubMed

Manohar, A; Krishnamoorthi, C

2017-08-01

Biocompatible Mg 1-x Zn x Fe 2 O 4 (x=0.2, 0.4, 0.5, 0.6 & 0.8) nanoparticles were synthesized by solvothermal reflux method. All compounds were crystallized in cubic spinel structure with slightly enhance of lattice parameter with biocompatible substituent Zn 2+ concentration. All compounds were shown spherical geometry with average particle diameter is around 12nm (colloidal size). The spinel structure formation was confirmed by X-ray diffraction,electron diffraction, infrared, Raman shift measurements. Infrared analysis shows oleic acid coating on the surface of nanoparticles and TGA analysis shows that oleic acid desorbs from nanoparticle by decomposition at around 400°C. UV-Vis-NIR spectra show all the compounds show energy band gap in the semiconductor range (≈ 1.9eV). All compounds show superparamagnetic characteristics at room temperature with enhanced saturated mass magnetization (M s ) with Zn 2+ concentration up to x=0.5 and then reduces with further enhance of x up to 0.8. The M s changes were ascribed to occupation of Zn 2+ at tetrahedral sites and proportional enhance of Fe 3+ at octahedral sites. The enhanced Fe 3+ concentration at octahedral sublattice leads to formation Fe 3+ -O 2- -Fe 3+ networks which favor antiferromagnetic interactions due to superexchange phenomenon. Photocatalytic activity of all compounds were studied through methylene blue (MB) degradation analysis. All compounds show ≈ 96% degradation of MB upon 70min irradiation of light on photoreactor vessel. In addition, photocatalytic activity (degradation efficiency) enhances with Zn 2+ concentration in MgFe 2 O 4 . The Zn 2+ substitution enhances both M s and photocatalytic activity biocompatible of MgFe 2 O 4 nanoparticles. Copyright © 2017. Published by Elsevier B.V.

Characterization and application of the hetero-junction ZnFe2O4/TiO2 for Cr(VI) reduction under visible light

NASA Astrophysics Data System (ADS)

Rekhila, G.; Trari, M.; Bessekhouad, Y.

2017-06-01

The spinel ZnFe2O4 prepared by nitrate route is used as dispersed photons collector capable to sensitize TiO2 under visible light and to reduce Cr(VI) into trivalent state. The transport properties, optical and photo-electrochemical characterizations are correlated, to build the energetic diagram of the hetero-system ZnFe2O4/TiO2/CrO4 - solution. A gap of 1.97 eV is obtained for the spinel from the diffuse reflectance. The conduction band of ZnFe2O4 (-1.47 V SCE) favors the electrons injection into TiO2, permitting a physical separation of the charge carriers. The oxidation of oxalic acid by photoholes prevents the corrosion of the spinel. The best configuration ZnFe2O4 (75 %)/TiO2 (25 %) is used to catalyze the downhill reaction (2HCrO4 - + 3C2H4O4 + 1.5O2 + 8H+ → 2Cr3+ + 6CO2 + 11 H2O, Δ G° = -557 kcal mol-1). 60 % of Cr(VI) are reduced after 3 h of visible light illumination and the photoactivity follows a first-order kinetic with a half-life of 70 min. The water reduction competes with the HCrO4 - reduction which is the reason in the regression of the photoactivity; a hydrogen evolution rate of 24 µmol mg-1 h-1 is obtained.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2017-12-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage (J-V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density (J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance (R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode (C μ ) and electron lifetime (t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2018-03-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage ( J- V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density ( J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance ( R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode ( C μ ) and electron lifetime ( t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO.

PubMed

Tuomisto, F; Ranki, V; Saarinen, K; Look, D C

2003-11-14

We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (E(el)=2 MeV, fluence 6 x 10(17) cm(-2)) ZnO samples. The Zn vacancies are identified at concentrations of [V(Zn)] approximately 2 x 10(15) cm(-3) in the as-grown material and [V(Zn)] approximately 2 x 10(16) cm(-3) in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.

Zn(II) coordination polymers with flexible V-shaped dicarboxylate ligand: Syntheses, helical structures and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Lin; Liu, Chong-Bo, E-mail: cbliu@nchu.edu.cn; Yang, Gao-Shan

2015-11-15

Hydrothermal reactions of 2,2′-[hexafluoroisopropylidenebis(p-phenyleneoxy)]diacetic acid (H{sub 2}L) and zinc ions in the presence of N-donor ancillary ligands afford four novel coordination polymers, namely, [Zn{sub 2}(μ{sub 2}-OH)(μ{sub 4}-O){sub 0.5}(L)]·0.5H{sub 2}O (1), [Zn(L)(2,2′-bipy)(H{sub 2}O)] (2), [Zn{sub 3}(L){sub 3}(phen){sub 2}]·H{sub 2}O (3) and [Zn{sub 2}(L){sub 2}(4,4′-bipy)] (4) (2,2′-bipy=2,2′-bipyridine; 4,4′-bipy=4,4′-bipyridine; phen=1,10-phenanthroline). Their structures have been determined by single-crystal X-ray diffraction analyses, elemental analyses, IR spectra, powder X-ray diffraction (PXRD), and thermogravimetric (TG) analyses. Complex 1 shows a 3-D clover framework consisting of [Zn{sub 4}(µ{sub 4}-O)(µ{sub 2}-OH){sub 2}]{sup 4+} clusters, and exhibits a novel (3,8)-connected topological net with the Schläfli symbol of {3·4·5}{sub 2}{3"4·4"4·5"2·6"6·7"1"0·8"2}, andmore » contains double-stranded and two kinds of meso-helices. 2 displays a helical chain structure, which is further extended via hydrogen bonds into a 3-D supramolecular structure with meso-helix chains. 3 displays a 2-D {4"4·6"2} parallelogram structure, which is further extended via hydrogen bonds into a 3-D supramolecular structure with single-stranded helical chains. 4 shows a 2-D {4"4·6"2} square structure with left- and right-handed helical chains. Moreover, the luminescent properties of 1–4 have been investigated. - Graphical abstract: Four new Zn(II) coordination polymers with helical structures based on flexible V-shaped dicarboxylate ligand have been synthesized and structurally characterized. Photoluminescent properties have been investigated. - Highlights: • Four novel Zn(II) coordination polymers with V-shaped ligand were characterized. • Complexes 1–4 show diverse intriguing helical characters. • Fluorescence properties of complexes 1–4 were investigated.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Mo; Sun, Wenlong; Pang, Haijun, E-mail: panghj116@163.com

With tuning the ligands from bte, btp, btb to bth, four new decavanadate-based metal–organic hybrid compounds, [Zn(bte)(H{sub 2}O){sub 4}][Zn{sub 2}(bte)(H{sub 2}O){sub 10}](V{sub 10}O{sub 28})·8H{sub 2}O, [Zn{sub 2}(btp){sub 4}(H{sub 2}O){sub 6}](H{sub 2}V{sub 10}O{sub 28})·4H{sub 2}O, [Zn(H{sub 2}O){sub 6}][Zn{sub 2}(btb){sub 2}V{sub 10}O{sub 28}(H{sub 2}O){sub 6}]·4H{sub 2}O, and [Zn{sub 2}(bth)(H{sub 2}O){sub 10}](H{sub 2}V{sub 10}O{sub 28})·6H{sub 2}O (bte=1,2-bis(1,2,4-triazol-1-yl)ethane, btp=1,3-bis(1,2,4-triazol-1-y1)propane, btb=1,4-bis(1,2,4-triazol-1-y1)butane, bth=1,6-bis(1,2,4-triazol-1-y1)hexane), have been synthesized under conventional conditions. The four compounds represent the first examples of decavanadate-based metal–organic hybrids constructed by Zn–bis(triazole) complexes. Their structural analyses show that the four compounds possess different Zn–bis(triazole) structural motifs and various finally structures, which verifies that regular changingmore » the spacers of ligands is an effective strategy to tuning the structures of polyoxometalate-based hybrids. Also, the electrochemical studies show that the compounds have good electrocatalytic activities towards oxidation of nitrite molecules ascribed to V-centers. - Graphical abstract: Four compounds representing the first examples of V{sub 10}O{sub 28}-based hybrids constructed by Zn–bis(triazole) complexes have been synthesized by changing the spacers of the ligands and their electrocatalytic properties have been investigated. - Highlights: • The first examples of V{sub 10}O{sub 28}-based hybrids constructed by Zn-bis(triazole) complexes. • Verifying that changing the spacers of ligands is a strategy to tuning structures. • Showing good electrocatalytic activities toward oxidation of nitrite molecules.« less

Photopyroelectric spectroscopic studies of ZnO-MnO(2)-Co(3)O(4)-V(2)O(5) ceramics.

PubMed

Rizwan, Zahid; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2011-01-01

Photopyroelectric (PPE) spectroscopy is a nondestructive tool that is used to study the optical properties of the ceramics (ZnO + 0.4MnO(2) + 0.4Co(3)O(4) + xV(2)O(5)), x = 0-1 mol%. Wavelength of incident light, modulated at 10 Hz, was in the range of 300-800 nm. PPE spectrum with reference to the doping level and sintering temperature is discussed. Optical energy band-gap (E(g)) was 2.11 eV for 0.3 mol% V(2)O(5) at a sintering temperature of 1025 °C as determined from the plot (ρhυ)(2)versushυ. With a further increase in V(2)O(5), the value of E(g) was found to be 2.59 eV. Steepness factor 'σ(A)' and 'σ(B)', which characterize the slope of exponential optical absorption, is discussed with reference to the variation of E(g). XRD, SEM and EDAX are also used for characterization of the ceramic. For this ceramic, the maximum relative density and grain size was observed to be 91.8% and 9.5 μm, respectively.

Photopyroelectric Spectroscopic Studies of ZnO-MnO2-Co3O4-V2O5 Ceramics

PubMed Central

Rizwan, Zahid; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2011-01-01

Photopyroelectric (PPE) spectroscopy is a nondestructive tool that is used to study the optical properties of the ceramics (ZnO + 0.4MnO2 + 0.4Co3O4 + xV2O5), x = 0–1 mol%. Wavelength of incident light, modulated at 10 Hz, was in the range of 300–800 nm. PPE spectrum with reference to the doping level and sintering temperature is discussed. Optical energy band-gap (Eg) was 2.11 eV for 0.3 mol% V2O5 at a sintering temperature of 1025 °C as determined from the plot (ρhυ)2 versus hυ. With a further increase in V2O5, the value of Eg was found to be 2.59 eV. Steepness factor ‘σA’ and ‘σB’, which characterize the slope of exponential optical absorption, is discussed with reference to the variation of Eg. XRD, SEM and EDAX are also used for characterization of the ceramic. For this ceramic, the maximum relative density and grain size was observed to be 91.8% and 9.5 μm, respectively. PMID:21673911

Microstructure and Current-Voltage Characteristics of Erbium Oxide Doped Multicomponent Zinc Oxide Varistors

NASA Astrophysics Data System (ADS)

Roy, Samarpita; Kundu Roy, Tapatee; Das, Debdulal

2018-03-01

The present work emphasizes the influence of Er2O3 addition on the microstructure and nonlinear current-voltage characteristics of ZnO based varistors prepared by mixing in a high energy ball mill followed by compaction and sintering at a temperature of 1100 °C for duration ranging from 0.5 to 8 h. Increasing sintering time is found to enhance the size of ZnO grains of the sintered pellets and thereby, degrades the electrical properties. However, Er2O3 addition retards the grain growth of ZnO due to the generation of secondary spinel phases (ErVO4 and Er-rich) at grain boundaries and triple points that restrict the grain boundary migration. Er2O3 modified ZnO varistor sintered at 1100 °C for 0.5 h exhibits considerably improved electrical property with nonlinear exponent and breakdown field of 27 and 3880 V cm-1, respectively.

The phase relations in the In 2O 3Fe 2ZnO 4ZnO system at 1350°C

NASA Astrophysics Data System (ADS)

Nakamura, Masaki; Kimizuka, Noboru; Mohri, Takahiko

1990-05-01

The phase relations in the In 2O 3Fe 2ZnO 4ZnO system at 1350°C are determined by means of a classical quenching method. There are a series of homologous solid solutions, In 1.28Fe 0.72O 3(ZnO)InFeO 3(ZnO), In 1.69Fe 0.31O 3(ZnO) 2InFeO 3(ZnO) 2In 0.85Fe 1.15O 3(ZnO) 2, In 2O 3(ZnO) 3InFeO 3(ZnO) 3In 0.78Fe 1.22O 3(ZnO) 3, In 2O 3(ZnO) 4InFeO 3(ZnO) 4In 0.62Fe 1.38O 3(ZnO) 4, In 2O 3(ZnO) 5InFeO 3(ZnO) 5In 0.67Fe 1.33O 3(ZnO) 5, In 2O 3(ZnO) 6InFeO 3(ZnO) 6In 0.60Fe 1.40O 3(ZnO) 6, In 2O 3(ZnO) 7InFeO 3(ZnO) 7In 0.51Fe 1.49O 3(ZnO) 7, In 2O 3(ZnO) 8InFeO 3(ZnO) 8In 1- xFe 1+ xO 3(ZnO) 8 (0.44 ≦ x ≦ 0.64), In 2O 3(ZnO) 9InFeO 3(ZnO) 9In 0.20Fe 1.80O 3(ZnO) 9, In 2O 3(ZnO) 10InFeO 3(ZnO) 10In 1- xFe 1+ xO 3(ZnO) 10 (0.74 ≦ x ≦ 0.89), In 2O 3(ZnO) 11InFeO 3(ZnO) 11In 1- xFe 1+ xO 3(ZnO) 11 (0.60 ≦ x < 1.00), and In 2O 3(ZnO) 13InFeO 3(ZnO) 13Fe 2O 3(ZnO) 13 having the layered structures with space group R overline3m (m = odd) or {P6 3}/{mmc} (m = even) for m in the InFeO 3(ZnO) m. We conclude that there are a series of homologous phases, (Fe 2O 3)(ZnO) m (m ≧ 12) , in the binary ZnOFe 2O 3 system. The lattice constants for these solid solutions are presented as a hexagonal crystal system. It is also concluded that the crystal structures for each solid solution consist of three kinds of layers which are stacked perpendicular to the c-axis in the hexagonal crystal system. In 1+ xFe 1- xO 3(ZnO) m (0 ≦ x ≦ 1) is composed of the InO 1.5, (In xFe 1- xZn)O 2.5, and ZnO layers, and In 1- xFe 1+ xO 3(ZnO) m (0 ≦ x ≦ 1) is composed of (In 1- xFe x)O 1.5, (FeZn)O 2.5, and ZnO layers, respectively. The solid solution range between Fe 2ZnO 4 and In xFe 2- xZnO 4 ( x = 0.40 ± 0.02) with a spinel structure is observed.

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics

NASA Astrophysics Data System (ADS)

Kaspar, T. C.; Droubay, T.; Jaffe, J. E.

2011-12-01

Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band (CB) offset of -0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, possibly due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.

Optical Properties of ZnO-Alloyed Nanocrystalline Films

DOE PAGES

Che, Hui; Huso, Jesse; Morrison, John L.; ...

2012-01-01

ZnO is emore » merging as one of the materials of choice for UV applications. It has a deep excitonic energy level and a direct bandgap of ~3.4 eV. Alloying ZnO with certain atomic constituents adds new optical and electronic functionalities to ZnO. This paper presents research on M g x Z n 1 − x O and Z n S 1 − x O x nanocrystalline flexible films, which enable tunable optical properties in the deep-UV and in the visible range. The ZnO and Mg 0 .3 Zn 0 .7 O films were found to have bandgaps at 3.35 and 4.02 eV, respectively. The photoluminescence of the Mg 0 .3 Zn 0 .7 O exhibited a bandedge emission at 3.95 eV, and at lower energy 3.38 eV due to the limited solubility inherent to these alloys. ZnS 0 .76 O 0 .24 and ZnS 0 .16 O 0 .84 were found to have bandgaps at 3.21 and 2.65 eV, respectively. The effect of nitrogen doping on ZnS 0 .16 O 0 .84 is discussed in terms of the highly lattice mismatched nature of these alloys and the resulting valence-band modification.« less

Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

PubMed

Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

2016-06-01

We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 μm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V.

Strong Inhibition of O-Atom Transfer Reactivity for Mn(IV)(O)(π-Radical-Cation)(Lewis Acid) versus Mn(V)(O) Porphyrinoid Complexes.

PubMed

Zaragoza, Jan Paulo T; Baglia, Regina A; Siegler, Maxime A; Goldberg, David P

2015-05-27

The oxygen atom transfer (OAT) reactivity of two valence tautomers of a Mn(V)(O) porphyrinoid complex was compared. The OAT kinetics of Mn(V)(O)(TBP8Cz) (TBP8Cz = octakis(p-tert-butylphenyl)corrolazinato(3-)) reacting with a series of triarylphosphine (PAr3) substrates were monitored by stopped-flow UV-vis spectroscopy, and revealed second-order rate constants ranging from 16(1) to 1.43(6) × 10(4) M(-1) s(-1). Characterization of the OAT transition state analogues Mn(III)(OPPh3)(TBP8Cz) and Mn(III)(OP(o-tolyl)3)(TBP8Cz) was carried out by single-crystal X-ray diffraction (XRD). A valence tautomer of the closed-shell Mn(V)(O)(TBP8Cz) can be stabilized by the addition of Lewis and Brønsted acids, resulting in the open-shell Mn(IV)(O)(TBP8Cz(•+)):LA (LA = Zn(II), B(C6F5)3, H(+)) complexes. These Mn(IV)(O)(π-radical-cation) derivatives exhibit dramatically inhibited rates of OAT with the PAr3 substrates (k = 8.5(2) × 10(-3) - 8.7 M(-1) s(-1)), contrasting the previously observed rate increase of H-atom transfer (HAT) for Mn(IV)(O)(TBP8Cz(•+)):LA with phenols. A Hammett analysis showed that the OAT reactivity for Mn(IV)(O)(TBP8Cz(•+)):LA is influenced by the Lewis acid strength. Spectral redox titration of Mn(IV)(O)(TBP8Cz(•+)):Zn(II) gives Ered = 0.69 V vs SCE, which is nearly +700 mV above its valence tautomer Mn(V)(O)(TBP8Cz) (Ered = -0.05 V). These data suggest that the two-electron electrophilicity of the Mn(O) valence tautomers dominate OAT reactivity and do not follow the trend in one-electron redox potentials, which appear to dominate HAT reactivity. This study provides new fundamental insights regarding the relative OAT and HAT reactivity of valence tautomers such as M(V)(O)(porph) versus M(IV)(O)(porph(•+)) (M = Mn or Fe) found in heme enzymes.

The Phase Relations in the In 2O 3-Al 2ZnO 4-ZnO System at 1350°C

NASA Astrophysics Data System (ADS)

Nakamura, Masaki; Kimizuka, Noboru; Mohri, Takahiko; Isobe, Mitsumasa

1993-08-01

Phase relations in the In 2O 3-Al 2ZnO 4-ZnO system at 1350°C are determined by a classical quenching method. This system consists of In 2O 3, Al 2ZnO 4, ZnO, and homologous phases InAlO 3(ZnO) m ( m = 2, 3, …) having solid solutions with LuFeO 3(ZnO) m-type crystal structures. These solid solution ranges are as follows: In 1+ x1Al 1- x1O 3(ZnO) 2 ( x1 = 0.70)-In 1+ x2Al 1- x2O 3(ZnO) 2 ( x2 = 0.316-0.320), In 2O 3(ZnO) 3-In 1+ xAl 1- xO 3(ZnO) 3 ( x = 0.230), In 2O 3(ZnO) 4-In 1+ xAl 1- xO 3(ZnO) 4 ( x = 0.15-0.16), In 2O 3(ZnO) 5-In 1+ xAl 1- xO 3(ZnO) 5 ( x = 0.116-0.130), In 2O 3(ZnO) 6-In 1+ xAl 1- xO 3(ZnO) 6 ( x = 0.000-0.111), In 2O 3(ZnO) 7-In 1+ xAl 1- xO 3(ZnO) 7 ( x = 0.08), In 2O 3(ZnO) 8-In 1+ xAl 1- xO 3(ZnO) 8 ( x: undetermined), and In 2O 3(ZnO) m-InAlO 3(ZnO) m ( m = 9, 10, 11, 13, 15, 17, and 19). The space groups of these homologous phases belong to R3¯ m for m = odd or P6 3/ mmc for m = even. Their crystal structures, In 1+ xAl 1- xO 3(ZnO) m (0 < x < 1), consist of three kinds of layers: an InO 1.5 layer, an (In xAl 1- xZn)O 2.5 layer, and ZnO layers. A comparison of the phase relations in the In 2O 3- M2ZnO 4-ZnO systems ( M = Fe, Ga, or Al) is made and their characteristic features are discussed in terms of the ionic radii and site preferences of the M cations.

As-bearing potassium feldspar - a product of fumarole exhalations and gas-rock interactions at the Tolbachik volcano, Kamchatka, Russia

NASA Astrophysics Data System (ADS)

Koshlyakova, Natalia; Pekov, Igor; Yapaskurt, Vasily; Shchipalkina, Nadezhda; Sidorov, Evgeny

2017-04-01

Potassium feldspar is abundant in products of active fumaroles at the Second scoria cone of the Northern Breakthrough of the Great Tolbachik Fissure Eruption (1975-1976), Tolbachik volcano, Kamchatka, Russia. The most intriguing fact is that the mineral here strongly differs chemically from potassium feldspar of all other geological formations. It demonstrates wide compositional variations and is typically enriched with As5+ and sometimes contains significant amounts of P, Zn, Cu, Fe and S. Filatovite K[(Al,Zn)_2(As,Si)_2O_8], the arsenate analogue of orthoclase, was discovered here (Vergasova et al., 2004). Samples from the Arsenatnaya fumarole located at the summit of the Second scoria cone (Pekov et al., 2014) contain, as our data show, complete solid-solution series between As-free potassium feldspar and filatovite. Potassium feldspar crystallizes in the Tolbachik fumaroles as a result of two processes: direct deposition from fumarolic gas and interaction of this gas with basalt scoria at temperatures not lower than 500°C. Exhalation feldspar occurs as incrustations sometimes consisting of well-formed prismatic crystals up to 1 mm long. Potassium feldspar produced by gas-rock interaction process replaces basalt and volcanic scoria. Cases of selective replacement of plagioclase in basalt for As-bearing potassium feldspar were observed. Potassium feldspar from the Arsenatnaya fumarole contains (our electron microprobe data, wt.{%}): SiO2 19.4-65.2 (corresponds to 1.05-3.01 atoms per formula unit = apfu; formulae are calculated on the basis of 8 O apfu), Al_2O3 14.3-30.6 (0.80 -1.95 apfu), As_2O5 0.00-34.2 (0.00-0.97 apfu), P_2O5 0.00-2.5 (0.00-0.10 apfu), SO3 0.00-3.2 (0.00-0.11 apfu), Fe_2O3 0.00-3.1 (0.00-0.11 apfu), ZnO 0.00-0.81 (0.00-0.03 apfu), CuO 0.00-2.1 (0.00-0.08 apfu). In feldspar structure all these constituents occupy tetrahedrally coordinated sites in the AlSi-framework (Filatov et al., 2004). Chemical variations of extra-framework cations in potassium feldspar from Arsenatnaya are significantly less (wt.{%}): Na_2O 0.03-1.18 (0.00-0.11 apfu), CaO 0.00-1.79 (0.00-0.09 apfu). A continuous solid-solution series belonging to potassic feldspar itself (i.e. with Si>As in atom proportions) demonstrates the following compositional range (our data for samples from Arsenatnaya): (K0.95Na0.02)Σ{0.97[Si2.94Al1.01Cu0.06P0.01]Σ{4.03O8 - K1.02[Al1.95Si1.05As0.97P0.01S0.01Zn0.01]Σ 3.99O_8. All intermediate members of this series show stable feldspar-type stoichiometry caused by major substitution scheme 2Si4+ \\leftrightarrow Al3+ + As5+. In its generalized form, this scheme can be written as 2Si4+ \\leftrightarrow (Al,Fe)3+ + (As,P)5+. This study was supported by the Russian Science Foundation, grant 14-17-00048. References: Filatov S.K., Krivovichev S.V., Burns P.C., Vergasova L.P. (2004): Crystal structure of filatovite, K[(Al,Zn)_2(As,Si)_2O_8], the first arsenate of the feldspar group. Eur. J. Mineral., 16, 537-543. Pekov I.V., Zubkova N.V., Yapaskurt V.O., Belakovskiy D.I., Lykova I.S., Vigasina M.F., Sidorov E.G., Pushcharovsky D.Yu. (2014): New arsenate minerals from the Arsenatnaya fumarole, Tolbachik volcano, Kamchatka, Russia. I. Yurmarinite, Na_7(Fe3+,Mg,Cu)_4(AsO_4)_6. Mineral. Mag., 78(4), 905-918. Vergasova L.P., Krivovichev S.K., Britvin S.N., Burns P.C., Ananiev V.V. (2004): Filatovite, K[(Al,Zn)_2(As,Si)_2O_8], a new mineral species from the Tolbachik volcano, Kamchatka peninsula, Russia. Eur. J. Mineral. 16, 533-536.

Low-Temperature Synthesis of Vertically Align ZnO Layer on ITO Glass: The Role of Seed Layer and Hydrothermal Process

NASA Astrophysics Data System (ADS)

Sholehah, Amalia; Achmad, NurSumiati; Dimyati, Arbi; Dwiyanti, Yanyan; Partuti, Tri

2017-05-01

ZnO thin layer has a broad potential application in optoelectronic devices. In the present study, vertically align ZnO layers on ITO glass were synthesized using wet chemical method. The seed layers were prepared using electrodeposition method at 3°C. After that, the growing process was carried out using chemical bath deposition (CBD) at 90°C. To improve the structural property of the ZnO layers, hydrothermal technique was used subsequently. Results showed that seeding layer has a great influence on the physical properties of the ZnO layers. Moreover, hydrothermal process conducted after the ZnO growth can enhance the morphological property of the layers. From the experiments, it is found that the ZnO layers has diameter of ∼60 nm with increasing thickness from ∼0.8 to 1.2 μm and band-gap energies of ∼3.2 eV.

Formation of isolated Zn vacancies in ZnO single crystals by absorption of ultraviolet radiation: a combined study using positron annihilation, photoluminescence, and mass spectroscopy.

PubMed

Khan, Enamul H; Weber, Marc H; McCluskey, Matthew D

2013-07-05

Positron annihilation spectra reveal isolated zinc vacancy (V(Zn)) creation in single-crystal ZnO exposed to 193-nm radiation at 100 mJ/cm(2) fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the V(Zn) acceptor level at ~100 meV to the conduction band. The observed V(Zn) density profile and hyperthermal Zn(+) ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon-a novel photoelectronic process for controlled V(Zn) creation in ZnO.

Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone.

PubMed

Jung, Hanearl; Kim, Woo-Hee; Park, Bo-Eun; Woo, Whang Je; Oh, Il-Kwon; Lee, Su Jeong; Kim, Yun Cheol; Myoung, Jae-Min; Gatineau, Satoko; Dussarrat, Christian; Kim, Hyungjun

2018-01-17

We report the effect of Y 2 O 3 passivation by atomic layer deposition (ALD) using various oxidants, such as H 2 O, O 2 plasma, and O 3 , on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (V th ) was observed in the case of the TFT subjected to the H 2 O-ALD Y 2 O 3 process; this shift was caused by a donor effect of negatively charged chemisorbed H 2 O molecules. In addition, degradation of the IGZO TFT device performance after the O 2 plasma-ALD Y 2 O 3 process (field-effect mobility (μ) = 8.7 cm 2 /(V·s), subthreshold swing (SS) = 0.77 V/dec, and V th = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O 3 -ALD Y 2 O 3 process led to enhanced device stability under light illumination (ΔV th = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔV th = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O 3 -ALD Y 2 O 3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thapa, Dinesh; Huso, Jesse; Morrison, John L.

ZnO is an efficient luminescent material in the UV-range ~3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O 2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphologymore » and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zn i related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O 2 ambient was found to introduce nominal O i centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ~40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zn i-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Lastly, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects.« less

Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

DOE PAGES

Thapa, Dinesh; Huso, Jesse; Morrison, John L.; ...

2016-06-14

ZnO is an efficient luminescent material in the UV-range ~3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O 2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphologymore » and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zn i related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O 2 ambient was found to introduce nominal O i centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ~40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zn i-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Lastly, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects.« less

Rapid and solvent-free solid-state synthesis and characterization of Zn3V2O8 nanostructures and their phenol red aqueous solution photodegradation

NASA Astrophysics Data System (ADS)

Mazloom, Fatemeh; Masjedi-Arani, Maryam; Salavati-Niasari, Masoud

2017-08-01

Zinc vanadate (Zn3V2O8) nanostructures have been successfully synthesized via simple, rapid and solvent-free solid-state method by using different complex precursors of Zn and NH4VO3 as novel starting materials. Effects of various zinc (II) Schiff base complex precursors and calcination temperatures were investigated to reach optimum condition. It was found that particle size and optical property of the as-prepared products could be greatly influenced via these parameters. The products were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectra, energy dispersive X-ray microanalysis (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Photoluminescence and ultraviolet-visible (UV-Vis) spectroscopy. The photocatalytic activity of zinc vanadate nano and bulk structures were compared by degradation of phenol red aqueous solution.

Effect of ZnO Nanoparticles on the Sintering Behavior and Physical Properties of Bi0.5(Na0.8K0.2)0.5TiO3 Lead-Free Ceramics

NASA Astrophysics Data System (ADS)

Vuong, Le Dai; Truong-Tho, Nguyen

2017-11-01

Sintered Bi0.5(Na0.8K0.2)0.5TiO3 + x wt.% ZnO nanoparticle (BNKT- xZnOn) ceramics have been fabricated by conventional annealing with the aid of ultrasound waves for preliminary milling. Because of the presence of the liquid Bi2O3-ZnO phase at the eutectic point of 738°C, the sintering temperature decreased from 1150°C to 1000°C, and the morphology phase boundary of BNKT- xZnOn ceramics can be clarified by two separated peaks at (002)T and (200)T of 2 θ in the x-ray diffraction (XRD) patterns. The improvement of ferroelectric properties has been obtained for BNZT-0.2 wt.% ZnOn ceramics by the increase of remanent polarization up to 20.4 μC/cm2 and a decrease of electric coercive field down to 14.2 kV/cm. The piezoelectric parameters of the ceramic included a piezoelectric charge constant of d 31 = 78 pC/N; electromechanical coupling factors k p = 0.31 and k t = 0.34, larger than the values of 42 pC/N, 0.12 and 0.13, respectively, were obtained for the BNKT ceramics.

Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers.

PubMed

Silva, J P B; Wang, J; Koster, G; Rijnders, G; Negrea, R F; Ghica, C; Sekhar, K C; Moreira, J Agostinho; Gomes, M J M

2018-05-02

In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 (BCZT)/ZnO bilayers deposited on 0.7 wt % Nb-doped (001)-SrTiO 3 (Nb:STO) substrates in a metal-ferroelectric-semiconductor (MFS) configuration. The X-ray diffraction measurements show that the BCZT and ZnO layers are highly oriented along the c-axis and have a single perovskite and wurtzite phases, respectively, whereas high-resolution transmission electron microscopy revealed very sharp Nb:STO/BCZT/ZnO interfaces. The capacitance-electric field ( C- E) characteristics of the bilayers exhibit a memory window of 47 kV/cm and a capacitance decrease of 22%, at a negative bias. The later result is explained by the formation of a depletion region in the ZnO layer. Moreover, an unusual resistive switching (RS) behavior is observed in the BCZT films, where the RS ratio can be 500 times enhanced in the BCZT/ZnO bilayers. The RS enhancement can be understood by the barrier potential profile modulation at the depletion region, in the BCZT/ZnO junction, via ferroelectric polarization switching of the BCZT layer. This work builds a bridge between the hysteretic behavior observed either in the C- E and current-electric field characteristics on a MFS structure.

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Syntheses and crystal structures of two new hydrated borates, Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] and Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Xuean; Zhao Yinghua; Chang Xinan

Two new hydrated borates, Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] and Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O, have been prepared by hydrothermal reactions at 170 {sup o}C. Single-crystal X-ray structural analyses showed that Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] crystallizes in a non-centrosymmetric space group R32 with a=8.006(2) A, c=17.751(2) A, Z=3 and Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O in a triclinic space group P1-bar with a=6.656(2) A, b=6.714(2) A, c=10.701(2) A, {alpha}=99.07(2){sup o}, {beta}=93.67(2){sup o}, {gamma}=118.87(1){sup o}, Z=2. Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] represents a new structure type in which Zn-centered tetrahedra are connected via common vertices leading to helical ribbons {submore » {infinity}} {sup 1}[Zn{sub 8}O{sub 15}(OH){sub 3}]{sup 17-} that pack side by side and are further condensed through sharing oxygen atoms to form a three-dimensional {sub {infinity}} {sup 3}[Zn{sub 8}O{sub 11}(OH){sub 3}]{sup 9-} framework. The boron atoms are incorporated into the channels in the framework to complete the final structure. Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O is a layered compound containing double ring [B{sub 5}O{sub 8}(OH)]{sup 2-} building units that share exocyclic oxygen atoms to form a two-dimensional layer. Symmetry-center-related layers are stacked along the c-axis and held together by interlayer Pb{sup 2+} ions and water molecules via electrostatic and hydrogen bonding interactions. The IR spectra further confirmed the existence of both triangular BO{sub 3} and OH groups in Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}], and BO{sub 3}, BO{sub 4}, OH groups as well as guest water molecules in Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O. -- Zn{sub 8}[(BO{sub 3}){sub 3}O{sub 2}(OH){sub 3}] represents a new structure type in which Zn-centered tetrahedra are connected via common vertices to form a three-dimensional framework. The boron atoms are incorporated into the channels in the framework to strengen the structure via B-O bonds. Pb[B{sub 5}O{sub 8}(OH)].1.5H{sub 2}O is a new layered material containing double ring [B{sub 5}O{sub 8}(OH)]{sup 2-} building units that share exocyclic oxygen atoms to form a two-dimensional layer.« less

Excitons emissions and Raman scattering of ZnO nanoparticles embedded in BaF2 matrices by reactive magnetron sputtering.

PubMed

Zang, C H; Su, J F; Liu, Y C; Tang, C J; Fang, S J; Zhang, D M; Zhang, Y S

2011-11-01

ZnO nanoparticles embedded in BaF2 matrix were fabricated by rf magnetic sputtering technology. The optical properties of high quality ZnO nanoparticles, thermally post treated in a N2 atmosphere, were investigated by temperature-dependence photoluminescence measurement. Free exciton and localized exciton were observed at the low temperature. Free exciton peak was at 3.374 eV and localized exciton peak was at 3.420 eV, dominating the PL spectrum at 77 K. Free exciton transition was observed at 3.310 eV at room temperature, whereas the localized exciton transition was at 3.378 eV. The multiple-phonon Raman scattering spectrum showed that ZnO nanoparticles embedded in BaF2 matrix had a large deformation energy originated from lattice mismatch between ZnO and BaF2 matrix. Analysis of the fitting results from the temperature dependence of FWHM of ZnO exciton illustrated that the large value of gamma(ph) was good qualitative agreement with the large deformation potential.

Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength.

PubMed

Fan, Ming-Ming; Liu, Ke-Wei; Chen, Xing; Wang, Xiao; Zhang, Zhen-Zhong; Li, Bing-Hui; Shen, De-Zhen

2015-09-23

Mixed-phase ZnMgO (m-ZMO) thin films with a single absorption edge tuning from ∼3.9 to ∼4.8 eV were realized on a-face sapphire (a-Al2O3) by plasma-assisted molecular beam epitaxy. The small lattice mismatch of both ZnO and MgO with a-Al2O3 should be responsible for the single and controllable absorption edge. Metal-semiconductor-metal (MSM) photodetectors were fabricated based on these m-ZMO films, and the devices have the single cutoff wavelength, which can be tuned from 335 to 275 nm. These devices possess low dark current (78 pA for m-Z0.67M0.33O, 11 pA for m-Z0.59M0.41O, and 4 pA for m-Z0.39M0.61O at 40 V) and high responsivity (434 A/W for m-Z0.67M0.33O, 89.8 A/W for m-Z0.59M0.41O, and 3.7 A/W for m-Z0.39M0.61O at 40 V). Further response study reveals that the 90-10% decay time of m-Z0.67M0.33O, m-Z0.59M0.41O, and m-Z0.39M0.61O is around 37, 30, and 0.7 ms, respectively. Large amounts of heterojunction interfaces between wurtzite ZMO and cubic rock-salt ZMO could be responsible for the low dark current and high responsivity of our mixed-phase devices. The excellent comprehensive performance of m-ZMO UV photodetectors on a-Al2O3 suggests that m-ZMO UV photodetectors should have great applied potential.

Acceptors in ZnO

DOE PAGES

Mccluskey, Matthew D.; Corolewski, Caleb; Lv, Jinpeng; ...

2015-03-21

Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence shows that these point defects have acceptor levels 3.2, 1.5, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peakmore » in ZnO nanocrystals has been attributed to an acceptor, which may involve a zinc vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g = 2.0033 and g = 2.0075, along with an isotropic center at g = 2.0053.« less

Highly Durable Na2V6O16·1.63H2O Nanowire Cathode for Aqueous Zinc-Ion Battery.

PubMed

Hu, Ping; Zhu, Ting; Wang, Xuanpeng; Wei, Xiujuan; Yan, Mengyu; Li, Jiantao; Luo, Wen; Yang, Wei; Zhang, Wencui; Zhou, Liang; Zhou, Zhiqiang; Mai, Liqiang

2018-03-14

Rechargeable aqueous zinc-ion batteries are highly desirable for grid-scale applications due to their low cost and high safety; however, the poor cycling stability hinders their widespread application. Herein, a highly durable zinc-ion battery system with a Na 2 V 6 O 16 ·1.63H 2 O nanowire cathode and an aqueous Zn(CF 3 SO 3 ) 2 electrolyte has been developed. The Na 2 V 6 O 16 ·1.63H 2 O nanowires deliver a high specific capacity of 352 mAh g -1 at 50 mA g -1 and exhibit a capacity retention of 90% over 6000 cycles at 5000 mA g -1 , which represents the best cycling performance compared with all previous reports. In contrast, the NaV 3 O 8 nanowires maintain only 17% of the initial capacity after 4000 cycles at 5000 mA g -1 . A single-nanowire-based zinc-ion battery is assembled, which reveals the intrinsic Zn 2+ storage mechanism at nanoscale. The remarkable electrochemical performance especially the long-term cycling stability makes Na 2 V 6 O 16 ·1.63H 2 O a promising cathode for a low-cost and safe aqueous zinc-ion battery.

Plasma-enhanced atomic layer deposition of highly transparent zinc oxy-sulfide thin films

NASA Astrophysics Data System (ADS)

Bugot, C.; Schneider, N.; Lincot, D.; Donsanti, F.

2018-05-01

The potential of Plasma Enhanced Atomic Layer Deposition (PEALD) for the synthesis of zinc oxy-sulfide Zn(O,S) thin films was explored for the first time, using a supercycle strategy and DEZ, Ar/O2 plasma and H2S as precursors. The growth and the properties of the material were studied by varying the pulse ratio on the full range of composition and the process temperature from Tdep = 120 °C to 220 °C. PEALD-Zn(O,S) films could be grown from pure ZnO to pure ZnS compositions by varying the H2S/(O2 plasma + H2S) pulse ratio. Three distinct growth modes were identified depending on the nature of exchange mechanisms at the film surface during the growth. Films globally have an amorphous structure, except for the extremely sulfur-rich or sulfur-poor ones. High transmission values (up to 85% for Zn(O,S) for 500 < λ < 2500 nm) and optical band gaps (3.3-3.8 eV) have been obtained. The PEALD-Zn(O,S) process and the thin film properties were compared with ALD-Zn(O,S) to highlight the specificities, disadvantages and benefits of plasma enhancement for the synthesis of multi-element materials.

Growth Oscillatory Zoning in Erythrite, Ideally Co3(AsO4)2·8H2O: Structural Variations in Vivianite-Group Minerals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antao, Sytle M.; Dhaliwal, Inayat

The crystal structure of an oscillatory zoned erythrite sample from Aghbar mine, Bou Azzer, Morocco, was refined using synchrotron high-resolution powder X-ray diffraction (HRPXRD) data, Rietveld refinement, space group C2/m, and Z = 2. The crystal contains two sets of oscillatory zones that appear to have developed during epitaxial growth. The unit-cell parameters obtained are a = 10.24799(3) Å, b = 13.42490(7) Å, c = 4.755885(8) Å, β = 105.1116(3)°, and V = 631.680(4) Å3. The empirical formula for erythrite, obtained with electron-probe micro-analysis (EPMA), is [Co2.78Zn0.11Ni0.07Fe0.04]Σ3.00(AsO4)2·8H2O. Erythrite belongs to the vivianite-type structure that contains M1O2(H2O)4 octahedra and M22O6(H2O)4 octahedralmore » dimers that are linked by TO4 (T5+ = As or P) tetrahedra to form complex layers parallel to the (010) plane. These layers are connected by hydrogen bonds. The average [6] = 2.122(1) Å and average [6] = 2.088(1) Å. With space group C2/m, there are two solid solutions: M3(AsO4)2·8H2O and M3(PO4)2·8H2O where M2+ = Mg, Fe, Co, Ni, or Zn. In these As- and P-series, using data from this study and from the literature, we find that their structural parameters evolve linearly with V and in a nearly parallel manner despite of the large difference in size between P5+ (0.170 Å) and As5+ (0.355 Å) cations. Average [4], [6], and [6] distances increase linearly with V. The average distance is affected by M atoms, whereas the average distance is unaffected because it contains shorter and stronger P–O bonds. Although As- and P-series occur naturally, there is no structural reason why similar V-series vivianite-group minerals do not occur naturally or cannot be synthesized.« less

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

PubMed

Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

2016-09-07

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance.

Transparent capacitors with hybrid ZnO:Al and Ag nanowires as electrodes.

PubMed

Zhang, Guozhen; Wu, Hao; Wang, Xiao; Wang, Ti; Liu, Chang

2016-03-11

Transparent conducting films with a composite structure of AlZnO-Ag nanowires (AgNWs) have been prepared by atomic layer deposition. The sheet resistance was reduced from 120 to 9 Ω when the AgNW networks were involved. Transparent capacitors with Al2O3-TiO2-Al2O3 dielectrics were fabricated on the composite electrodes and demonstrated a capacitance density of 10.1 fF μm(-2), which was significantly higher than that of capacitors with AlZnO electrodes (8.8 fF μm(-1)). The capacitance density remained almost unchanged in a broad frequency range from 3 kHz to 1 MHz. Moreover, a low leakage current density of 2.4 × 10(-7) A cm(-2) at 1 V was achieved. Transparent and flexible capacitors were also fabricated using the composite electrodes, and demonstrated an improved bendability. The transparent capacitors showed an average optical transmittance over 70% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

Band alignment of ZnO/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xinke, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn; He, Jiazhu; Chen, Le

2016-08-15

The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface hasmore » been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.« less

Formation and morphology of Zn(2)Ti(3)O(8) powders using hydrothermal process without dispersant agent or mineralizer.

PubMed

Wang, Cheng-Li; Hwang, Weng-Sing; Chang, Kuo-Ming; Ko, Horng-Huey; Hsi, Chi-Shiung; Huang, Hong-Hsin; Wang, Moo-Chin

2011-01-28

Synthesis of Zn(2)Ti(3)O(8) powders for attenuating UVA using TiCl(4), Zn(NO(3))(2)·6H(2)O and NH(4)OH as precursor materials by hydrothermal process has been investigated. The X-ray diffractometry (XRD) results show the phases of ZnO, anatase TiO(2) and Zn(2)Ti(3)O(8) coexisted when the zinc titanate powders were calcined at 600 °C for 1 h. When calcined at 900 °C for 1 h, the XRD results reveal the existence of ZnO, Zn(2)TiO(4), rutile TiO(2) and ZnTiO(3). Scanning electron microscope (SEM) observations show extensive large agglomeration in the samples. Transmission electron microscope (TEM) and electron diffraction (ED) examination results indicate that ZnTiO(3) crystallites formed with a size of about 5 nm on the matrix of plate-like ZnO when calcined at 700 °C for 1 h. The calcination samples have acceptable absorbance at a wavelength of 400 nm, indicating that the zinc titanate precursor powders calcined at 700 °C for 1 h can be used as an UVA-attenuating agent.

Formation and Morphology of Zn2Ti3O8 Powders Using Hydrothermal Process without Dispersant Agent or Mineralizer

PubMed Central

Wang, Cheng-Li; Hwang, Weng-Sing; Chang, Kuo-Ming; Ko, Horng-Huey; Hsi, Chi-Shiung; Huang, Hong-Hsin; Wang, Moo-Chin

2011-01-01

Synthesis of Zn2Ti3O8 powders for attenuating UVA using TiCl4, Zn(NO3)2·6H2O and NH4OH as precursor materials by hydrothermal process has been investigated. The X-ray diffractometry (XRD) results show the phases of ZnO, anatase TiO2 and Zn2Ti3O8 coexisted when the zinc titanate powders were calcined at 600 °C for 1 h. When calcined at 900 °C for 1 h, the XRD results reveal the existence of ZnO, Zn2TiO4, rutile TiO2 and ZnTiO3. Scanning electron microscope (SEM) observations show extensive large agglomeration in the samples. Transmission electron microscope (TEM) and electron diffraction (ED) examination results indicate that ZnTiO3 crystallites formed with a size of about 5 nm on the matrix of plate-like ZnO when calcined at 700 °C for 1 h. The calcination samples have acceptable absorbance at a wavelength of 400 nm, indicating that the zinc titanate precursor powders calcined at 700 °C for 1 h can be used as an UVA-attenuating agent. PMID:21541035

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array.

PubMed

Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin

2015-06-23

A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

NASA Astrophysics Data System (ADS)

Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

2013-03-01

In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

Hydrogen-related excitons and their excited-state transitions in ZnO

NASA Astrophysics Data System (ADS)

Heinhold, R.; Neiman, A.; Kennedy, J. V.; Markwitz, A.; Reeves, R. J.; Allen, M. W.

2017-02-01

The role of hydrogen in the photoluminescence (PL) of ZnO was investigated using four different types of bulk ZnO single crystal, with varying concentrations of unintentional hydrogen donor and Group I acceptor impurities. Photoluminescence spectra were measured at 3 K, with emission energies determined to ±50 μeV, before and after separate annealing in O2, N2, and H2 atmospheres. Using this approach, several new hydrogen-related neutral-donor-bound excitons, and their corresponding B exciton, ionized donor, and two electron satellite (TES) excited state transitions were identified and their properties further investigated using hydrogen and deuterium ion implantation. The commonly observed I4 (3.36272 eV) emission due to excitons bound to multicoordinated hydrogen inside an oxygen vacancy (HO), that is present in most ZnO material, was noticeably absent in hydrothermally grown (HT) ZnO and instead was replaced by a doublet of two closely lying recombination lines I4 b ,c (3.36219, 3.36237 eV) due to a hydrogen-related donor with a binding energy (ED) of 47.7 meV. A new and usually dominant recombination line I6 -H (3.36085 eV) due to a different hydrogen-related defect complex with an ED of 49.5 meV was also identified in HT ZnO. Here, I4 b ,c and I6 -H were stable up to approximately 400 and 600 °C, respectively, indicating that they are likely to contribute to the unintentional n -type conductivity of ZnO. Another doublet I5 (3.36137, 3.36148 eV) was identified in hydrogenated HT ZnO single crystals with low Li concentrations, and this was associated with a defect complex with an ED of 49.1 meV. A broad near band edge (NBE) emission centered at 3.366 eV was associated with excitons bound to subsurface hydrogen. We further demonstrate that hydrogen incorporates on different lattice sites for different annealing conditions and show that the new features I4 b ,c, I6 -H, and I5 most likely originate from the lithium-hydrogen defect complexes L iZn-HO , A lZn-HO-L iZn , and VZn-H3 ,4 , respectively.

Electrosynthesis of ZnO nanorods and nanotowers: Morphology and X-ray Absorption Near Edge Spectroscopy studies

NASA Astrophysics Data System (ADS)

Sigircik, Gokmen; Erken, Ozge; Tuken, Tunc; Gumus, Cebrail; Ozkendir, Osman M.; Ufuktepe, Yuksel

2015-06-01

Deposition mechanism of nano-structured ZnO films has been investigated in the absence and presence of chloride ions from aqueous solution. The resulting opto-electronic properties were interpreted extensively, using X-ray diffraction (XRD), X-ray Absorption Near Edge Spectroscopy (XANES), field emission scanning electron microscopy (FE-SEM), UV-Visible spectroscopy and four probe techniques. The ZnO deposition is mass transport controlled process and the interaction of chloride ions with the surface has great influence on diffusion kinetics, considering the substantial species (Zn2+ and OH-) involved in the construction of ZnO film. This effect does not change major lattice parameters, as shown with detailed analysis of XRD data. However, the texture coefficient (Tc) (0 0 2) value is higher in presence of chloride ions containing synthesis solution which gave vertically aligned, well defined and uniformly dispersed nanorods structure. The calculated Eg values are in the range 3.28-3.41 eV and 3.22-3.31 eV for ZnO nanorods and nanotowers synthesized at different deposition periods, respectively. Furthermore, the charge mobility values regarding the deposition periods were measured to be in the ranges from 130.4 to 449.2 cm2 V-1 s-1 and 126.2 to 204.7 cm2 V-1 s-1 for nanorods and nanotowers, respectively. From XANES results, it was shown that the Zn K-edge spectrum is dominated by the transition of Zn 1s core electrons into the unoccupied Zn 4p states of the conduction band. Comparing the rod and tower nano-structured ZnO thin films, the excitation behavior of valence band electrons is different. Moreover, the density states of Zn 4p are higher for ZnO nanorods.

Graphene oxide-zinc oxide nanocomposite as channel layer for field effect transistors: effect of ZnO loading on field effect transport.

PubMed

Jilani, S Mahaboob; Banerji, Pallab

2014-10-08

The effects of ZnO on graphene oxide (GO)-ZnO nanocomposites are investigated to tune the conductivity in GO under field effect regime. Zinc oxides with different concentrations from 5 wt % to 25 wt % are used in a GO matrix to increase the conductivity in the composite. Six sets of field effect transistors with pristine GO and GO-ZnO as the channel layer at varying ZnO concentrations were fabricated. From the transfer characteristics, it is observed that GO exhibited an insulating behavior and the transistors with low ZnO (5 wt %) concentration initially showed p-type conductivity that changes to n-type with increases in ZnO loading. This n-type dominance in conductivity is a consequence of the transfer of electrons from ZnO to the GO matrix. From X-ray photoelectron spectroscopic measurements, it is observed that the progressive reduction in the C-OH oxygen group took place with increases in ZnO loading. Thus, from insulating GO to p- and then n-type, conductivity in GO could be achieved with reduction in the C-OH oxygen group by photocatalytic reduction of GO with varying degrees of ZnO. The restoration of sp(2) electron network in the GO matrix with the anchoring of ZnO nanostructures was observed from Raman spectra. From UV-visible spectra, the band gap in pristine GO was found to be 3.98 eV and reduced to 2.8 eV with increase in ZnO attachment.

Effects on external quantum efficiency of electrochemically constructed n-ZnO/p-Cu2O photovoltaic device by annealing

NASA Astrophysics Data System (ADS)

Khoo, Pei Loon; Kikkawa, Yuuki; Shinagawa, Tsutomu; Izaki, Masanobu

2017-07-01

Cuprous oxide (Cu2O), a terrestrial abundant, low cost, nontoxic, intrinsically p-type oxide semiconductor with bandgap energy of about 2eV, has recently received increasing attention as a light absorbing layer in solar cells. However, the performances of electrochemically constructed Cu2O solar devices are poor compared to the theoretical power conversion efficiency. This research was conducted focusing on the EQE performance, which is closely related to the short circuit current of a solar device. ZnO/Cu2O-PV-devices were constructed electrochemically with 3-electrode cell on Ga:ZnO/SLG substrates; ZnO layers were deposited from an aqueous solution of 8 mmolL-1 zinc nitrate hexahydrate at 63°C, 0.01 Coulomb cm-2, and -0.8V, while Cu2O layers were deposited from aqueous solution containing 0.4 molL-1 copper (II) acetate monohydrate (pH12.5), at 40°C, 1.5 Coulomb cm-2, and -0.4V. Devices were then annealed under different temperatures of 150°C, 200°C, 250°C, and 300°C for 60 minutes with a Rapid Thermal Anneal furnace (RTA). The EQE of the devices were measured with a spectral sensitivity device and compared to the non-annealed device. Further studies were made such as morphology observation of the films by FE-SEM and measurements of X-ray diffraction patterns. Annealed samples showed improved maximum EQE at 150-200°C of annealing, indicating that EQE above 90% can be achieved, proving the validity of EQE improvement via low temperature annealing method for thin film Cu2O photovoltaic devices.

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers.

PubMed

Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

2017-09-06

Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

Photoeletrocatalytic activity of an n-ZnO/p-Cu2O/n-TNA ternary heterojunction electrode for tetracycline degradation.

PubMed

Li, Jinhua; Lv, Shubin; Liu, Yanbiao; Bai, Jing; Zhou, Baoxue; Hu, Xiaofang

2013-11-15

In this study, a novel ternary heterojunction n-ZnO/p-Cu2O/n-TiO2 nanotube arrays (n-ZnO/p-Cu2O/n-TNA) nanophotocatalyst with a sandwich-like nanostructure was constructed and applied for the photoelectrocatalytic (PEC) degradation of typical PPCPs, tetracycline (TC). The ternary heterojunction n-ZnO/p-Cu2O/n-TNA was obtained by depositing Cu2O on the surface of TNA via sonoelectrochemical deposition (SED) and subsequently building a layer of ZnO onto the p-Cu2O/n-TNA surface through hydrothermal synthesis. After being deposited by the Cu2O, the absorption-band edge of the p-Cu2O/n-TNA was obviously red-shifted to the visible region (to 505 nm), and the band gap was reduced from its original 3.20 eV to 2.46 eV. The band gap absorption edge of the ternary n-ZnO/p-Cu2O/n-TNA is similar to that of p-Cu2O/n-TN and extends the visible spectrum absorption to 510 nm, corresponding to an Eg value of about 2.43 eV. Under illumination of visible light, the photocurrent density of the ternary heterojunction n-ZnO/p-Cu2O/n-TNA electrode at 0.5 V (vs. Ag/AgCl) was more than 106 times as high as that of the pure TNAs electrode, 3.6 times as high as that of the binary heterojunction p-Cu2O/n-TNA electrode. The degradation of TC indicated that the ternary heterojunction n-ZnO/p-Cu2O/n-TNA electrode maintained a very high photoelectrocatalytic activity and excellent stability and reliability. Such kind of ternary heterojunction electrode material has a broad application prospect not only in pollution control but also in many other fields. Copyright © 2013 Elsevier B.V. All rights reserved.

Ammonia sensing properties of V-doped ZnO:Ca nanopowders prepared by sol–gel synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fazio, E.; Hjiri, M.; Dhahri, R.

2015-03-15

V-doped ZnO:Ca nanopowders with different V loading were prepared by sol–gel synthesis and successive drying in ethanol under supercritical conditions. Characterization data of nanopowders annealed at 700 °C in air, revealed that they have the wurtzite structure. Raman features of V-doped ZnO:Ca samples were found to be substantially modified with respect to pure ZnO or binary ZnO:Ca samples, which indicate the substitution of vanadium ions in the ZnO lattice. The ammonia sensing properties of V-doped ZnO:Ca thick films were also investigated. The results obtained demonstrate the possibility of a fine tuning of the sensing characteristics of ZnO-based sensors by Camore » and V doping. In particular, their combined effect has brought to an enhanced response towards NH{sub 3} compared to bare ZnO and binary V-ZnO and Ca-ZnO samples. Raman investigation suggested that the presence of Ca play a key role in enhancing the sensor response in these ternary composite nanomaterials. - Graphical abstract: V-doped ZnO:Ca nanopowders prepared by sol–gel synthesis possess enhanced sensing characteristics towards NH{sub 3} compared to bare ZnO. - Highlights: • V-doped ZnO:Ca nanopowders with different V loading were prepared by sol–gel synthesis. • Raman features of V-doped ZnO:Ca samples indicate the substitution of V ions in the ZnO lattice. • Combined effects of dopants have brought to an enhanced response to NH{sub 3} compared to ZnO. • Ca play a key role in enhancing the sensor response of ternary V-doped ZnO:Ca composites.« less

Structural and optical properties of chromium doped zinc oxide nanoparticles synthesized by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naqvi, Syed Mohd. Adnan, E-mail: adiaks2004@yahoo.co.in; Irshad, Kashif, E-mail: alig.kashif@gmail.com; Soleimani, Hassan, E-mail: hassan.soleimani@petronas.com.my, E-mail: noorhana-yahya@petronas.com.my

2014-10-24

Nanosized Cr-doped ZnO nano particles were synthesized by facile sol-gel auto combustion method. The structural and optical properties of Cr-doped ZnO nanoparticles have been investigated by XRD and UV-Vis spectroscopy at room temperature for 0% to 8% concentration. X-ray diffraction analysis reveals that the Cr-doped ZnO crystallizes in a single phase polycrystalline nature with wurtzite lattice. With every % of doping, the peaks are shifting scarcely and doping of Cr is possible up to 7%. After that, the last peak vanishes, that signifies its structure is transmuted from 8% doping. The average crystallite size decreases with increase in Cr concentrationmore » (i.e. 28.9 nm for 0% to 25.8 nm for 8%). The UV-Vis spectra of the nanoparticles betoken an incrementation in the band gap energy from 3.401, 3.415, 3.431, 3.437,3.453, 3.514,3.521, 3.530 and 3.538 eV respectively, for 0,1, 2, 3, 4, 5, 6, 7 and 8 % doping concentration.« less

P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process

NASA Astrophysics Data System (ADS)

Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

2018-02-01

Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130 keV Na and 90 keV N ions at 460 °C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24 × 1016-1.34 × 1017 cm-3, hole mobilities between 0.65 and 8.37 cm2 V-1 s-1, and resistivities in the range of 53.3-80.7 Ω cm by Hall-effect measurements. There are no other secondary phase appearing, with (0 0 2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.

Origin of green luminescence in hydrothermally grown ZnO single crystals

NASA Astrophysics Data System (ADS)

Čížek, J.; Valenta, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Novotný, M.; Bulíř, J.

2015-06-01

Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS{sub 2}) by zinc oxide (ZnO)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Dong-Ho; Hong, Seong-Taek; Oh, Aely

Highlights: • We have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. • ZnO doping improved the electrical parameters of MoS{sub 2} transistor (I{sub on}↑, μ{sub FE}↑, n↑). • The reduction of ZnO doping effect (ΔV{sub TH}: ∼75% ↓) was observed in air. • The highest photoresponsivity of ZnO-doped MoS{sub 2} photodetector was 3.18 × 10{sup 3} A/W. • The highest detectivity of ZnO-doped MoS{sub 2} photodetector was 5.94 × 10{sup 12} Jones. - Abstract: In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. The ZnO doping effects were systematically investigated bymore » Raman spectroscopy and electrical/optical measurements (I{sub D}–V{sub G} with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS{sub 2}-based electronics (I{sub on}↑, μ{sub FE}↑, n↑) owing to reduction of the effective barrier height between the source and the MoS{sub 2} channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔV{sub TH} of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS{sub 2} photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 10{sup 3} A/W) and detectivity (5.94 × 10{sup 12} Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.« less

Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.

PubMed

Abliz, Ablat; Huang, Chun-Wei; Wang, Jingli; Xu, Lei; Liao, Lei; Xiao, Xiangheng; Wu, Wen-Wei; Fan, Zhiyong; Jiang, Changzhong; Li, Jinchai; Guo, Shishang; Liu, Chuansheng; Guo, Tailiang

2016-03-01

The intriguing properties of zinc oxide-based semiconductors are being extensively studied as they are attractive alternatives to current silicon-based semiconductors for applications in transparent and flexible electronics. Although they have promising properties, significant improvements on performance and electrical reliability of ZnO-based thin film transistors (TFTs) should be achieved before they can be applied widely in practical applications. This work demonstrates a rational and elegant design of TFT, composed of poly crystalline ZnO:H/ZnO bilayer structure without using other metal elements for doping. The field-effect mobility and gate bias stability of the bilayer structured devices have been improved. In this device structure, the hydrogenated ultrathin ZnO:H active layer (∼3 nm) could provide suitable carrier concentration and decrease the interface trap density, while thick pure-ZnO layer could control channel conductance. Based on this novel structure, a high field-effect mobility of 42.6 cm(2) V(-1) s(-1), a high on/off current ratio of 10(8) and a small subthreshold swing of 0.13 V dec(-1) have been achieved. Additionally, the bias stress stability of the bilayer structured devices is enhanced compared to the simple single channel layer ZnO device. These results suggest that the bilayer ZnO:H/ZnO TFTs have a great potential for low-cost thin-film electronics.

Semipolar III-nitride laser diodes with zinc oxide cladding.

PubMed

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm -3 carrier density, and ~0.1 cm 2 V -1 s -1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstratemore » the potential application of infiltration synthesis in fabricating metal oxide electronic devices.« less

Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

DOE PAGES

Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim; ...

2015-11-17

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm -3 carrier density, and ~0.1 cm 2 V -1 s -1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstratemore » the potential application of infiltration synthesis in fabricating metal oxide electronic devices.« less

Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

NASA Astrophysics Data System (ADS)

Mahmood, K.; Asghar, M.; Amin, N.; Ali, Adnan

2015-03-01

We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high-temperature thermal annealing. The ZnS thin films were grown on Si (001) substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction (XRD), photoluminescence (PL), four-point probe, scanning electron microscope (SEM) and energy dispersive X-ray diffraction (EDX). The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two-step process: (1) high-energy O atoms replaced S atoms in lattice during annealing process, and (2) S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log (resistivity) was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

NASA Astrophysics Data System (ADS)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Kawamura, Yumi; Tani, Mai; Hattori, Nozomu; Miyatake, Naomasa; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

2012-02-01

We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. We deposited the ZnO channel layer by PA-ALD at 100 or 300 °C, and fabricated TFTs. The transfer characteristic of the 300 °C-deposited ZnO TFT exhibited high mobility (5.7 cm2 V-1 s-1), although the threshold voltage largely shifted toward the negative (-16 V). Furthermore, we deposited Al2O3 thin film as a gate insulator by PA-ALD at 100 °C for the low-temperature TFT fabrication process. In the case of ZnO TFTs with the Al2O3 gate insulator, the shift of the threshold voltage improved (-0.1 V). This improvement of the negative shift seems to be due to the negative charges of the Al2O3 film deposited by PA-ALD. On the basis of the experimental results, we confirmed that the threshold voltage of ZnO TFTs is controlled by PA-ALD for the deposition of the gate insulator.

Work-Function and Surface Energy Tunable Cyanoacrylic Acid Small-Molecule Derivative Interlayer on Planar ZnO Nanorods for Improved Organic Photovoltaic Performance.

PubMed

Ambade, Swapnil B; Ambade, Rohan B; Bagde, Sushil S; Lee, Soo-Hyoung

2016-12-28

The issue of work-function and surface energy is fundamental to "decode" the critical inorganic/organic interface in hybrid organic photovoltaics, which influences important photovoltaic events like exciton dissociation, charge transfer, photocurrent (J sc ), open-circuit voltage (V oc ), etc. We demonstrate that by incorporating an interlayer of cyanoacrylic acid small molecular layer (SML) on solution-processed, spin-coated, planar ZnO nanorods (P-ZnO NRs), higher photovoltaic (PV) performances were achieved in both inverted organic photovoltaic (iOPV) and hybrid organic photovoltaic (HOPV) devices, where ZnO acts as an "electron-transporting layer" and as an "electron acceptor", respectively. For the tuned range of surface energy from 52.5 to 33 mN/m, the power conversion efficiency (PCE) in bulk heterojunction (BHJ) iOPVs based on poly(3-hexylthiophene) (P3HT) and phenyl-C 60 -butyric acid methyl ester (PC 60 BM) increases from 3.16% to 3.68%, and that based on poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene)-2-carboxylate-2-6-diyl)] (PTB7:Th):[6,6]-phenyl C 71 butyric acid methyl ester (PC 71 BM) photoactive BHJ increases from 6.55% to 8.0%, respectively. The improved PV performance in iOPV devices is majorly attributed to enhanced photocurrents achieved as a result of reduced surface energy and greater electron affinity from the covalent attachment of the strong electron-withdrawing cyano moiety, while that in HOPV devices, where PCE increases from 0.21% to 0.79% for SML-modified devices, is ascribed to a large increase in V oc benefitted due to reduced work function effected from the presence of strong dipole moment in SML that points away from P-ZnO NRs.

Exploring the color of transition metal ions in irregular coordination geometries: new colored inorganic oxides based on the spiroffite structure, Zn(2-x)M(x)Te3O8 (M = Co, Ni, Cu).

PubMed

Tamilarasan, S; Sarma, Debajit; Bhattacharjee, S; Waghmare, U V; Natarajan, S; Gopalakrishnan, J

2013-05-20

We describe the synthesis, crystal structures, and optical absorption spectra of transition metal-substituted spiroffite derivatives, Zn(2-x)M(x)Te3O8 (M(II) = Co, Ni, Cu; 0 < x ≤ 1.0). The oxides are readily synthesized by solid state reaction of stoichiometric mixtures of the constituent binaries at 620 °C. Reitveld refinement of the crystal structures from powder X-ray diffraction (XRD) data shows that the Zn/MO6 octahedra are strongly distorted, as in the parent Zn2Te3O8 structure, consisting of five relatively short Zn/M(II)-O bonds (1.898-2.236 Å) and one longer Zn/M(II)-O bond (2.356-2.519 Å). We have interpreted the unique colors and the optical absorption/diffuse reflectance spectra of Zn(2-x)M(x)Te3O8 in the visible, in terms of the observed/irregular coordination geometry of the Zn/M(II)-O chromophores. We could not however prepare the fully substituted M2Te3O8 (M(II) = Co, Ni, Cu) by the direct solid state reaction method. Density Functional Theory (DFT) modeling of the electronic structure of both the parent and the transition metal substituted derivatives provides new insights into the bonding and the role of transition metals toward the origin of color in these materials. We believe that transition metal substituted spiroffites Zn(2-x)M(x)Te3O8 reported here suggest new directions for the development of colored inorganic materials/pigments featuring irregular/distorted oxygen coordination polyhedra around transition metal ions.

Hydrothermally Processed Photosensitive Field-Effect Transistor Based on ZnO Nanorod Networks

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Bhargava, Kshitij; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

2016-11-01

Formation of a stable, reproducible zinc oxide (ZnO) nanorod-network-based photosensitive field-effect transistor using a hydrothermal process at low temperature has been demonstrated. K2Cr2O7 additive was used to improve adhesion and facilitate growth of the ZnO nanorod network over the SiO2/Si substrate. Transistor characteristics obtained in the dark resemble those of the n-channel-mode field-effect transistor (FET). The devices showed I on/ I off ratio above 8 × 102 under dark condition, field-effect mobility of 4.49 cm2 V-1 s-1, and threshold voltage of -12 V. Further, under ultraviolet (UV) illumination, the FET exhibited sensitivity of 2.7 × 102 in off-state (-10 V) versus 1.4 in on-state (+9.7 V) of operation. FETs based on such nanorod networks showed good photoresponse, which is attributed to the large surface area of the nanorod network. The growth temperature for ZnO nanorod networks was kept at 110°C, enabling a low-temperature, cost-effective, simple approach for high-performance ZnO-based FETs for large-scale production. The role of network interfaces in the FET performance is also discussed.

Preparation and characterization of nanorod-like TiO2 and ZnO films used for charge-transport buffer layers in P3HT based organic solar cells

NASA Astrophysics Data System (ADS)

Thao, Tran Thi; Long, Dang Dinh; Truong, Vo-Van; Dinh, Nguyen Nang

2016-08-01

With the aim of findingout the appropriate buffer layers for organic solar cells (OSC), TiO2 and ZnO on ITO/glass were prepared as nanorod-like thin films. The TiO2 films were crystallyzed in the anatase phase and the ZnO films, in the wurtzite structure. The nanorods in both the fims have a similar size of 15 to 20 nm in diameter and 30 to 50 nm in length. The nanorods have an orientation nearly perpendicular to the ITO-substrate surface. From UV-Vis data the bandgap of the TiO2 and ZnO films were determined tobe 3.26 eV and 3.42 eV, respectively. The laminar organic solar cells with added TiO2 and ZnO, namely ITO/TiO2/P3HT:PCBM/LiF/Al (TBD) and ITO/ZnO/P3HT:PCBM/LiF/Al (ZBD)were made for characterization of the energy conversion performance. As a result, comparing to TiO2,the nanorod-likeZnO filmwas found to be a much better buffer layer that made the fill factor improve from a value of 0.60 for TBD to 0.82 for ZBD, and consequently thePCE was enhanced from 0.84 for TBD to 1.17% for ZBD.

From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.

PubMed

Lu, Ming-Yen; Zhou, Xiang; Chiu, Cheng-Yao; Crawford, Samuel; Gradečak, Silvija

2014-01-22

We demonstrate a method to synthesize GaN-ZnGa2O4 core-shell nanowire and ZnGa2O4 nanotube arrays by a low-temperature hydrothermal process using GaN nanowires as templates. Transmission electron microscopy and X-ray photoelectron spectroscopy results show that a ZnGa2O4 shell forms on the surface of GaN nanowires and that the shell thickness is controlled by the time of the hydrothermal process and thus the concentration of Zn ions in the solution. Furthermore, ZnGa2O4 nanotube arrays were obtained by depleting the GaN core from GaN-ZnGa2O4 core-shell nanowire arrays during the reaction and subsequent etching with HCl. The GaN-ZnGa2O4 core-shell nanowires exhibit photoluminescence peaks centered at 2.60 and 2.90 eV attributed to the ZnGa2O4 shell, as well as peaks centered at 3.35 and 3.50 eV corresponding to the GaN core. We also demonstrate the synthesis of GaN-ZnGa2O4 heterojunction nanowires by a selective formation process as a simple route toward development of heterojunction nanodevices for optoelectronic applications.

Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

PubMed

Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

2016-08-10

Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1).

Comparative optical studies of ZnO and ZnO-TiO2 - Metal oxide nanoparticle

NASA Astrophysics Data System (ADS)

Vijayalakshmi, R. Vanathi; Asvini, V.; Kumar, P. Praveen; Ravichandran, K.

2018-05-01

A comparative study was carried out to show the enhancement in optical activity of bimetal oxide nanoparticle (ZnO - TiO2) than metal oxide nanoparticle (ZnO), which can preferably be used for optical applications. The samples were prepared by wet chemical method and crystalline structure of the samples as hexagonal - primitive for ZnO and tetragonal - bcc for ZnO-TiO2 was confirmed by XRD measurements. The average grain size of ZnO - 19.89nm and ZnO-TiO2- 49.89 nm was calculated by Debye- Scherrer formula. The structure and particle size of the sample was analyzed by FESEM images. The direct band gap energy of ZnO (3.9eV) and ZnO - TiO2(4.68eV) was calculated by Kubelka-Munk Function, from which it is clear that the band gap energy increases in bimetal oxide to a desired level than in its pure form. The photoluminescence study shows that the emitted wavelength of the samples lies exactly around the visible region.

The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy--A chemical inert interface with significant band discontinuities.

PubMed

Zhang, Yufeng; Lin, Nanying; Li, Yaping; Wang, Xiaodan; Wang, Huiqiong; Kang, Junyong; Wilks, Regan; Bär, Marcus; Mu, Rui

2016-03-15

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n-type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices.

The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities

PubMed Central

Zhang, Yufeng; Lin, Nanying; Li, Yaping; Wang, Xiaodan; Wang, Huiqiong; Kang, Junyong; Wilks, Regan; Bär, Marcus; Mu, Rui

2016-01-01

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n–type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices. PMID:26976240

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

PubMed

Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

2016-12-01

Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

Solid Phase Extraction of Trace Elements in Waterand Tissue Samples on a Mini Column with Diphenylcarbazone Impregnated Nano-TiO2 and Their Determination by Inductively Coupled Plasma Optical Emission Spectrometry

PubMed Central

Baytak, Sıtkı; Arslan, Zikri

2015-01-01

This study presents a simple, robust and environmentally friendly solid phase preconcentration procedure for multielement determination by inductively coupled plasma optical emission spectrometry (ICP-OES) using diphenylcarbazone (DPC) impregnated TiO2 nanopowder (n-TiO2). DPC was successfully impregnated onto n-TiO2 in colloidal solution. A number of elements, including Co(II), Cr(III), Cu(II), Fe(III), Mn(II) and Zn(II) were quantitatively preconcentrated from aqueous solutions between pH 8 and 8.5 at a flow rate of 2 mL min−1, and then eluted with 2 mL of 5% (v/v) HNO3. A mini-column packed with 0.12 g DPC impregnated n-TiO2 retained all elements quantitatively from up to 250 mL multielement solution (2.5 μg per analyte) affording an enrichment factor of 125. The limits of detection (LOD) for preconcentration of 50 mL blank solutions (n = 12) were 0.28, 0.15, 0.25, 0.22, 0.12, and 0.10 μg L−1 for Co, Cr, Cu, Fe, Mn, and Zn, respectively. The relative standard deviation (RSD) for five replicate determinations was 0.8, 3.4, 2.6, 2.2, 1.2 and 3.3% for Co, Cr, Cu, Fe, Mn and Zn, respectively, at 5 μg L−1 level. The method was validated with analysis of Freshwater (SRM 1643e) and Lobster hepatopancreas (TORT-2) certified reference materials, and then applied to the determination of the elements from tap water and lake water samples by ICP-OES. PMID:26236403

Enhanced phenol-photodegradation by particulate semiconductor mixtures: interparticle electron-jump.

PubMed

Karunakaran, C; Dhanalakshmi, R; Gomathisankar, P; Manikandan, G

2010-04-15

Degradation of phenol on suspended TiO(2), ZnO, CdO, Fe(2)O(3), CuO, ZnS and Nb(2)O(5) particles under UV-A light exhibit identical photokinetic behavior; follow first-order kinetics, display linear dependence on the photon flux and slowdown with increase of pH. All the semiconductors show sustainable photocatalytic activity. Dissolved O(2) is essential for the photodegradation and oxidizing agents like H(2)O(2), Na(2)BO(3), K(2)S(2)O(8), KBrO(3), KIO(3) and KIO(4), reducing agents such as NaNO(2) and Na(2)SO(3) and sacrificial electron donors like hydroquinone, diphenyl amine and trimethyl amine enhance the degradation. However, the photocatalysis is insensitive to pre-sonication. Two particulate semiconductors present together, under suspension and at continuous motion, enhance the photocatalytic degradation up to about four-fold revealing interparticle electron-jump. 2009 Elsevier B.V. All rights reserved.

ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties

DOE PAGES

Huso, Jesse; Morrison, John L.; Che, Hui; ...

2011-01-01

An emore » merging material for flexible UV applications is Mg x Zn 1 − x O which is capable of tunable bandgap and luminescence in the UV range of ~3.4 eV–7.4 eV depending on the composition x . Studies on the optical and material characteristics of ZnO and Mg 0.3 Zn 0.7 O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg 0.3 Zn 0.7 O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ~3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg 0.3 Zn 0.7 O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications.« less

Comparison of structural and electrical properties of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for α-InGaZnO thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Tung-Ming, E-mail: tmpan@mail.cgu.edu.tw; Chen, Ching-Hung; Her, Jim-Long

We compared the structural properties and electrical characteristics of high-κ Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for amorphous indium-gallium-zinc oxide (α-InGaZnO) thin-film transistor (TFT) applications. The Lu{sub 2}O{sub 3} film has a strong Lu{sub 2}O{sub 3} (400) peak in the X-ray diffraction pattern, while the Lu{sub 2}TiO{sub 5} sample shows a relatively weak Lu{sub 2}TiO{sub 5} (102) peak. Atomic force microscopy reveals that the Lu{sub 2}O{sub 3} dielectric exhibits a rougher surface (about three times) than Lu{sub 2}TiO{sub 5} one. In X-ray photoelectron spectroscopy analysis, we found that the intensity of the O 1s peak corresponding tomore » Lu(OH){sub x} for Lu{sub 2}O{sub 3} film was higher than that of Lu{sub 2}TiO{sub 5} film. Furthermore, compared with the Lu{sub 2}O{sub 3} dielectric, the α-InGaZnO TFT using the Lu{sub 2}TiO{sub 5} gate dielectric exhibited a lower threshold voltage (from 0.43 to 0.25 V), a higher I{sub on}/I{sub off} current ratio (from 3.5 × 10{sup 6} to 1.3 × 10{sup 8}), a smaller subthreshold swing (from 276 to 130 mV/decade), and a larger field-effect mobility (from 14.5 to 24.4 cm{sup 2}/V s). These results are probably due to the incorporation of TiO{sub x} into the Lu{sub 2}O{sub 3} film to form a Lu{sub 2}TiO{sub 5} structure featuring a smooth surface, a low moisture absorption, a high dielectric constant, and a low interface state density at the oxide/channel interface. Furthermore, the stability of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} α-InGaZnO TFTs was investigated under positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS). The threshold voltage of the TFT performed under NGBS is more degradation than that under PGBS. This behavior may be attributed to the electron charge trapping at the dielectric–channel interface under PGBS, whereas the oxygen vacancies occurred in the InGaZnO under NGBS.« less

Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

NASA Astrophysics Data System (ADS)

Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

2012-09-01

We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

The conversion of PN-junction influencing the piezoelectric output of a CuO/ZnO nanoarray nanogenerator and its application as a room-temperature self-powered active H₂S sensor.

PubMed

Nie, Yuxin; Deng, Ping; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

2014-07-04

Room-temperature, high H2S sensing has been realized from a CuO/ZnO nanoarray self-powered, active gas sensor. The piezoelectric output of CuO/ZnO nanoarrays can act not only as the power source of the device, but also as the H2S sensing signal at room temperature. Upon exposure to 800 ppm H2S at room temperature, the piezoelectric output of the device greatly decreased from 0.738 V (in air) to 0.101 V. The sensitivity increased to 629.8, much higher than bare ZnO nanoarrays. As the device was exposed to H2S, a CuO/ZnO PN-junction was converted into a CuS/ZnO Ohmic contact, which greatly increased the electron density in the nanowire and enhanced the screen effect on the piezoelectric output. Our results can stimulate a research trend on designing new composite piezoelectric material for high-performance self-powered active gas sensors.

Probing the Li Insertion Mechanism of ZnFe 2O 4 in Li-Ion Batteries: A Combined X-Ray Diffraction, Extended X-Ray Absorption Fine Structure, and Density Functional Theory Study [Probing the Li insertion mechanism of ZnFe 2O 4 in Li ion batteries: A combined XRD, EXAFS, and DFT study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yiman; Pelliccione, Christopher J.; Brady, Alexander B.

Here, we report an extensive study on fundamental properties that determine the functional electrochemistry of ZnFe 2O 4 spinel (theoretical capacity of 1000 mAh/g). For the first time, the reduction mechanism is followed through a combination of in situ X-ray diffraction data, synchrotron based powder diffraction, and ex-situ extended X-ray absorption fine structure allowing complete visualization of reduction products irrespective of their crystallinity. The first 0.5 electron equivalents (ee) do not significantly change the starting crystal structure. Subsequent lithiation results in migration of Zn 2+ ions from 8a tetrahedral sites into vacant 16c sites. Density functional theory shows that Limore » + ions insert into 16c site initially and then 8a site with further lithiation. Fe metal is formed over the next eight ee of reduction with no evidence of concurrent Zn 2+ reduction to Zn metal. Despite the expected formation of LiZn alloy from the electron count, we find no evidence for this phase under the tested conditions. Additionally, upon oxidation to 3 V, we observe an FeO phase with no evidence of Fe 2O 3. Electrochemistry data show higher electron equivalent transfer than can be accounted for solely based on ZnFe 2O 4 reduction indicating excess capacity ascribed to carbon reduction or surface electrolyte interphase formation.« less

Probing the Li Insertion Mechanism of ZnFe 2O 4 in Li-Ion Batteries: A Combined X-Ray Diffraction, Extended X-Ray Absorption Fine Structure, and Density Functional Theory Study [Probing the Li insertion mechanism of ZnFe 2O 4 in Li ion batteries: A combined XRD, EXAFS, and DFT study

DOE PAGES

Zhang, Yiman; Pelliccione, Christopher J.; Brady, Alexander B.; ...

2017-04-24

Here, we report an extensive study on fundamental properties that determine the functional electrochemistry of ZnFe 2O 4 spinel (theoretical capacity of 1000 mAh/g). For the first time, the reduction mechanism is followed through a combination of in situ X-ray diffraction data, synchrotron based powder diffraction, and ex-situ extended X-ray absorption fine structure allowing complete visualization of reduction products irrespective of their crystallinity. The first 0.5 electron equivalents (ee) do not significantly change the starting crystal structure. Subsequent lithiation results in migration of Zn 2+ ions from 8a tetrahedral sites into vacant 16c sites. Density functional theory shows that Limore » + ions insert into 16c site initially and then 8a site with further lithiation. Fe metal is formed over the next eight ee of reduction with no evidence of concurrent Zn 2+ reduction to Zn metal. Despite the expected formation of LiZn alloy from the electron count, we find no evidence for this phase under the tested conditions. Additionally, upon oxidation to 3 V, we observe an FeO phase with no evidence of Fe 2O 3. Electrochemistry data show higher electron equivalent transfer than can be accounted for solely based on ZnFe 2O 4 reduction indicating excess capacity ascribed to carbon reduction or surface electrolyte interphase formation.« less

Real structure of (Sb1/3Zn2/3)GaO3(ZnO)3, a member of the homologous series ARO3(ZnO)m with ordered site occupation

NASA Astrophysics Data System (ADS)

Garling, Jennifer; Assenmacher, Wilfried; Schmid, Herbert; Longo, Paolo; Mader, Werner

2018-02-01

The hitherto unknown compound (Sb1/3Zn2/3)GaO3(ZnO)3, a member of the homologous series with general formula ARO3(ZnO)m (A,R = trivalent metal cation), was prepared by solid state methods from the binary oxides in sealed Pt-tubes. The structure of (Sb1/3Zn2/3)GaO3(ZnO)3 has been determined by X-ray diffraction from flux-grown single crystals (R 3 ̅ m , Z = 3, aR = 3.2387(7) Å, cR = 41.78(1) Å. The analysis revealed that (Sb1/3Zn2/3)GaO3(ZnO)m is isostructural with InGaO3(ZnO)m, where In3+ on octahedral sites is replaced by Sb5+ and Zn2+ in a ratio of 1:2, preserving an average charge of 3+. (Sb1/3Zn2/3)GaO3(ZnO)3 was furthermore analyzed by electron diffraction, High Angle Annular Dark Field (HAADF) scanning TEM, and high precision EELS spectroscopic imaging, where a periodic ordering of SbO6 octahedra connected via edge sharing to six ZnO6 octahedra in the octahedral layers in a honeycomb motif is found. Due to the large lateral distance of ca. 1.4 nm between adjacent octahedral layers, electrostatic interaction might hardly dictate Sb and Zn positions in neighbouring layers, and hence is a characteristic of the real structure of (Sb1/3Zn2/3)GaO3(ZnO)3. A structure model of the compound in space group P3112 (Nr. 151) with strictly ordered and discrete Sb and Zn positions is derived by crystallographic transformations as closest approximant for the real structure of (Sb1/3Zn2/3)GaO3(ZnO)3. UV-vis measurements confirm this compound to be a transparent oxide with an optical band gap in the UV region with Eg = 3.15 eV.

Negative differential resistance and resistive switching in SnO2/ZnO interface

NASA Astrophysics Data System (ADS)

Pant, Rohit; Patel, Nagabhushan; Nanda, K. K.; Krupanidhi, S. B.

2017-09-01

We report a very stable negative differential resistance (NDR) and resistive switching (RS) behavior of highly transparent thin films of the SnO2/ZnO bilayer, deposited by magnetron sputtering. When this bilayer of SnO2/ZnO was annealed at temperatures above 400 °C, ZnO diffuses into SnO2 at the threading dislocations and gaps between the grain boundaries, leading to the formation of a ZnO nanostructure surrounded by SnO2. Such a configuration forms a resonant tunneling type structure with SnO2/ZnO/SnO2…….ZnO/SnO2 interface formation. Interestingly, the heterostructure exhibits a Gunn diode-like behavior and shows NDR and RS irrespective of the voltage sweep direction, which is the characteristic of unipolar devices. A threshold voltage of ˜1.68 V and a peak-to-valley ratio of current ˜2.5 are observed for an electrode separation of 2 mm, when the bias is swept from -5 V to +5 V. It was also observed that the threshold voltage can be tuned with changing distance between the electrodes. The device shows a very stable RS with a uniform ratio of about 3.4 between the high resistive state and the low resistive state. Overall, the results demonstrate the application of SnO2/ZnO bilayer thin films in transparent electronics.

Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

NASA Astrophysics Data System (ADS)

Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu

2013-04-01

We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

Sulfur-Doped Zinc Oxide (ZnO) Nanostars: Synthesis and Simulation of Growth Mechanism

DTIC Science & Technology

2011-10-01

Zinc Oxide ( ZnO ) Nanostars: Synthesis and Simulation of Growth Mechanism Jinhyun Cho1, Qiubao Lin2,3, Sungwoo...characterization, and ab initio simulations of star-shaped hexagonal zinc oxide ( ZnO ) nanowires. The ZnO nanostructures were synthesized by a low...Introduction Zinc oxide ( ZnO ) is a wide bandgap (3.37 eV), Ⅱ–Ⅵ semiconductor of great interest for optoelectronic applications [1–3]. Its

Origin of green luminescence in hydrothermally grown ZnO single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Čížek, J., E-mail: jakub.cizek@mff.cuni.cz; Hruška, P.; Melikhova, O.

2015-06-22

Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies.more » This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.« less

Atomic layer deposition of Nb-doped ZnO for thin film transistors

NASA Astrophysics Data System (ADS)

Shaw, A.; Wrench, J. S.; Jin, J. D.; Whittles, T. J.; Mitrovic, I. Z.; Raja, M.; Dhanak, V. R.; Chalker, P. R.; Hall, S.

2016-11-01

We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were deposited using atomic layer deposition. X-ray diffraction measurements indicate that the crystallinity of the NbZnO films reduces with an increase in the Nb content and lower deposition temperature. It was confirmed using X-ray photoelectron spectroscopy that Nb5+ is present within the NbZnO matrix. Furthermore, photoluminescence indicates that the band gap of the ZnO increases with a higher Nb content, which is explained by the Burstein-Moss effect. For TFT applications, a growth temperature of 175 °C for 3.8% NbZnO provided the best TFT characteristics with a saturation mobility of 7.9 cm2/Vs, the current On/Off ratio of 1 × 108, and the subthreshold swing of 0.34 V/decade. The transport is seen to follow a multiple-trap and release mechanism at lower gate voltages and percolation thereafter.

Tuning the Band Bending and Controlling the Surface Reactivity at Polar and Nonpolar Surfaces of ZnO through Phosphonic Acid Binding.

PubMed

McNeill, Alexandra R; Hyndman, Adam R; Reeves, Roger J; Downard, Alison J; Allen, Martin W

2016-11-16

ZnO is a prime candidate for future use in transparent electronics; however, development of practical materials requires attention to factors including control of its unusual surface band bending and surface reactivity. In this work, we have modified the O-polar (0001̅), Zn-polar (0001), and m-plane (101̅0) surfaces of ZnO with phosphonic acid (PA) derivatives and measured the effect on the surface band bending and surface sensitivity to atmospheric oxygen. Core level and valence band synchrotron X-ray photoemission spectroscopy was used to measure the surface band bending introduced by PA modifiers with substituents of opposite polarity dipole moment: octadecylphosphonic acid (ODPA) and 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctylphosphonic acid (F 13 OPA). Both PAs act as surface electron donors, increasing the downward band bending and the strength of the two-dimensional surface electron accumulation layer on all of the ZnO surfaces investigated. On the O-polar (0001̅) and m-plane (101̅0) surfaces, the ODPA modifier produced the largest increase in downward band bending relative to the hydroxyl-terminated unmodified surface of 0.55 and 0.35 eV, respectively. On the Zn-polar (0001) face, the F 13 OPA modifier gave the largest increase (by 0.50 eV) producing a total downward band bending of 1.00 eV, representing ∼30% of the ZnO band gap. Ultraviolet (UV) photoinduced surface wettability and photoconductivity measurements demonstrated that the PA modifiers are effective at decreasing the sensitivity of the surface toward atmospheric oxygen. Modification with PA derivatives produced a large increase in the persistence of UV-induced photoconductivity and a large reduction in UV-induced changes in surface wettability.

A novel drug delivery of 5-fluorouracil device based on TiO2/ZnS nanotubes.

PubMed

Faria, Henrique Antonio Mendonça; de Queiroz, Alvaro Antonio Alencar

2015-11-01

The structural and electronic properties of titanium oxide nanotubes (TiO2) have attracted considerable attention for the development of therapeutic devices and imaging probes for nanomedicine. However, the fluorescence response of TiO2 has typically been within ultraviolet spectrum. In this study, the surface modification of TiO2 nanotubes with ZnS quantum dots was found to produce a red shift in the ultra violet emission band. The TiO2 nanotubes used in this work were obtained by sol-gel template synthesis. The ZnS quantum dots were deposited onto TiO2 nanotube surface by a micelle-template inducing reaction. The structure and morphology of the resulting hybrid TiO2/ZnS nanotubes were investigated by scanning electron microscopy, transmission electron microscopy and X-ray diffraction techniques. According to the results of fluorescence spectroscopy, pure TiO2 nanotubes exhibited a high emission at 380nm (3.26eV), whereas TiO2/ZnS exhibited an emission at 410nm (3.02eV). The TiO2/ZnS nanotubes demonstrated good bio-imaging ability on sycamore cultured plant cells. The biocompatibility against mammalian cells (Chinese Hamster Ovarian Cells-CHO) suggesting that TiO2/ZnS may also have suitable optical properties for use as biological markers in diagnostic medicine. The drug release characteristic of TiO2/ZnS nanotubes was explored using 5-fluorouracil (5-FU), an anticancer drug used in photodynamic therapy. The results show that the TiO2/ZnS nanotubes are a promising candidate for anticancer drug delivery systems. Copyright © 2015 Elsevier B.V. All rights reserved.

Improving ultraviolet photodetection of ZnO nanorods by Cr doped ZnO encapsulation process

NASA Astrophysics Data System (ADS)

Safa, S.; Mokhtari, S.; Khayatian, A.; Azimirad, R.

2018-04-01

Encapsulated ZnO nanorods (NRs) with different Cr concentration (0-4.5 at.%) were prepared in two different steps. First, ZnO NRs were grown by hydrothermal method. Then, they were encapsulated by dip coating method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy, and ultraviolet (UV)-visible spectrophotometer analyses. XRD analysis proved that Cr incorporated into the ZnO structure successfully. Based on optical analysis, band gap changes in the range of 2.74-3.84 eV. Finally, UV responses of all samples were deeply investigated. It revealed 0.5 at.% Cr doped sample had the most photocurrent (0.75 mA) and photoresponsivity (0.8 A/W) of all which were about three times greater than photocurrent and photoresponsivity of the undoped sample.

Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

PubMed Central

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary. PMID:22606043

Synthesis mechanism of low-voltage praseodymium oxide doped zinc oxide varistor ceramics prepared through modified citrate gel coating.

PubMed

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr(6)O(11)) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr(6)O(11) addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr(6)O(11) from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr(6)O(11) content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liau, Leo Chau-Kuang, E-mail: lckliau@saturn.yzu.edu.tw; Hsu, Tzu-Hsien; Lo, Pei-Hsuan

We report the characteristics of p-channel thin film transistors (p-TFTs) with ZnO/hydrated polyvinyl alcohol (PVA) (ZnO/PVA) conducting channels. The metal-oxide-semiconductor structure of the p-TFTs was composed of indium tin oxide (ITO)/SiO{sub 2}/ZnO/PVA layers. The TFT was assembled using PVA gel, which was glued to ITO substrates patterned to form source and drain electrodes. The ZnO/PVA composite film acted as an effective conducting film because of the chemisorption reaction at the film interface where free electrons can be generated. The formation of the conducting channel was also affected by V{sub G} applied to the TFT. The ZnO/PVA-based TFTs demonstrated p-channel transistormore » performance, shown by current-voltage (I-V) data analysis. The electrical parameters of the device were evaluated, including the on/off ratio (∼10{sup 3}), threshold voltage (V{sub th}, −1 V), and subthreshold swing (−2.2 V/dec). The PVA/ZnO-based p-TFTs were fabricated using simple and cost-effective approaches instead of doping methods.« less

Properties of NiZnO Thin Films with Different Amounts of Al Doping

NASA Astrophysics Data System (ADS)

Kayani, Zohra N.; Fatima, Gulnaz; Zulfiqar, Bareera; Riaz, Saira; Naseem, Shahzad

2017-10-01

Transparent Al-doped NiZnO thin films have been fabricated by sol-gel dip coating and investigated using scanning electron microscopy, x-ray diffraction analysis, ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry, vibrating-sample magnetometry, and Fourier-transform infrared spectroscopy. The Al-doped NiZnO films consisted of ZnO hexagonal and α-Al2O3 rhombohedral phases as the Al incorporation was gradually increased from 1 at.% up to 3 at.%. A decrease in the optical bandgap from 3.90 eV to 3.09 eV was observed for films grown with Al content of 1 at.% to 2.5 at.%, but at 3 at.% Al, the bandgap increased to 3.87 eV. Optical transmittance of 96% was achieved for these transparent oxide films. Study of their magnetic properties revealed that increasing Al percentage resulted in enhanced ferromagnetism. The saturated magnetization increased with increasing Al percentage. The ferromagnetic properties of Al-doped NiZnO are mediated by electrons. The surface of the deposited thin films consisted of nanowires, nanorods, porous surface, and grains.

The phase compositions and microwave dielectric properties of Li2Zn(Ti1-xSnx)3O8 ceramics

NASA Astrophysics Data System (ADS)

Lu, Xuepeng; Hu, Jie; Chen, Haoyuan; Xu, Wensheng; Li, Shuai

2017-08-01

The Li2Zn(Ti1-xSnx)3O8 (0.02≤x≤0.20) ceramics were prepared by the conventional solid-state ceramic route. The sintering behavior, phase compositions, microstructures and microwave dielectric properties of Li2Zn(Ti1-xSnx)3O8 ceramics were thoroughly investigated. The XRD patterns of Li2Zn(Ti1-xSnx)3O8 ceramics exhibited a single spinel as the main phase in the x value range of 0.02-0.08. The dielectric constants decreased linearly with increasing the substitution of Sn, which was mainly controlled by dielectric polarizabilities and secondary phase. The variation of Q×f values was dependent on average grain sizes and secondary phase. The τf values of Li2Zn(Ti1-xSnx)3O8 ceramics became more negative with higher substitution of Sn, which was related to the variations of their cell volumes. Typically, the Li2Zn(Ti0.92Sn0.08)3O8 ceramic sintered at 1075 °C for 4h exhibited good microwave dielectric properties: ɛr= 24.4, Q×f=89300 GHz, τf= -16.0 ppm/°C.

In-vitro antibacterial study of zinc oxide nanostructures on Streptococcus sobrinus

NASA Astrophysics Data System (ADS)

Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo; Sirelkhatim, Amna; Hasan, Habsah; Mohamad, Dasmawati; Masudi, Sam'an Malik; Seeni, Azman; Rahman, Rosliza Abd

2014-10-01

Zinc oxide nanostructures were prepared using a pilot plant of zinc oxide boiling furnace. Generally, it produced two types of nanostructures different in morphology; one is rod-like shaped (ZnO-1) and a plate-like shape (ZnO-2). The properties of ZnO were studied by structural, optical and morphological using XRD, PL and FESEM respectively. The XRD patterns confirmed the wurtzite structures of ZnO with the calculated crystallite size of 41 nm (ZnO-1) and 42 nm (ZnO-2) using Scherrer formula. The NBE peaks were determined by photoluminescence spectra which reveal peak at 3.25 eV and 3.23 eV for ZnO-1 and ZnO-2 respectively. Prior to that, the morphologies for both ZnO-1 and ZnO-2 were demonstrated from FESEM micrographs. Subsequently the antibacterial study was conducted using in-vitro broth dilution technique towards a gram positive bacterium Streptococcus sobrinus (ATCC 33478) to investigate the level of antibacterial effect of zinc oxide nanostructures as antibacterial agent. Gradual increment of ZnO concentrations from 10-20 mM affected the inhibition level after twenty four hours of incubation. In conjunction with concentration increment of ZnO, the percentage inhibition towards Streptococcus sobrinus was also increased accordingly. The highest inhibition occurred at 20 mM of ZnO-1 and ZnO-2 for 98% and 77% respectively. It showed that ZnO has good properties as antibacterial agent and relevancy with data presented by XRD, PL and FESEM were determined.

Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

NASA Astrophysics Data System (ADS)

Zhao, Xiaolong; Wu, Zhenping; Zhi, Yusong; An, Yuehua; Cui, Wei; Li, Linghong; Tang, Weihua

2017-03-01

Highly oriented (\\bar{2} 0 1 ) Ga2-x Zn x O3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)‧ under 254 nm ultraviolet excitation, and the maximum was obtained at x  =  0.8. A metal-semiconductor-metal structured solar-blind photodetector based on Ga2-x Zn x O3 (x  =  0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for β-Ga2-x Zn x O3 (x  =  0.8) photodetector were observed with 254 nm ultraviolet illumination.

20% Efficient Zn0.9Mg0.1O:Al/Zn0.8Mg0.2O/Cu(In,Ga)(S,Se)2 Solar Cell Prepared by All-Dry Process through a Combination of Heat-Light-Soaking and Light-Soaking Processes.

PubMed

Chantana, Jakapan; Kato, Takuya; Sugimoto, Hiroki; Minemoto, Takashi

2018-04-04

Development of Cd-free Cu(In,Ga)(S,Se) 2 (CIGSSe)-based thin-film solar cells fabricated by an all-dry process is intriguing to minimize optical loss at a wavelength shorter than 520 nm owing to absorption of the CdS buffer layer and to be easily integrated into an in-line process for cost reduction. Cd-free CIGSSe solar cells are therefore prepared by the all-dry process with a structure of Zn 0.9 Mg 0.1 O:Al/Zn 0.8 Mg 0.2 O/CIGSSe/Mo/glass. It is demonstrated that Zn 0.8 Mg 0.2 O and Zn 0.9 Mg 0.1 O:Al are appropriate as buffer and transparent conductive oxide layers with large optical band gap energy values of 3.75 and 3.80 eV, respectively. The conversion efficiency (η) of the Cd-free CIGSSe solar cell without K-treatment is consequently increased to 18.1%. To further increase the η, the Cd-free CIGSSe solar cell with K-treatment is next fabricated and followed by posttreatment called the heat-light-soaking (HLS) + light-soaking (LS) process, including HLS at 110 °C followed by LS under AM 1.5G illumination. It is disclosed that the HLS + LS process gives rise to not only the enhancement of carrier density but also the decrease in the carrier recombination rate at the buffer/absorber interface. Ultimately, the η of the Cd-free CIGSSe solar cell with K-treatment prepared by the all-dry process is enhanced to the level of 20.0%.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

The molecular structure of the isopoly complex ion, decavanadate (V10O286-)

USGS Publications Warehouse

Evans, H.T.

1966-01-01

The structure of the decavanadate ion V10O286- has been found by a determination of the crystal structure of K2Zn2V10O28?? 16H2O. The soluble, orange crystals are triclinic with space group P1 and have a unit cell with a = 10.778 A, b = 11.146 A, c = 8.774 A, ?? = 104?? 57???, ?? = 109?? 3???', and ?? = 65?? 0??? (Z = 1). The structure was solved from a three-dimensional Patterson map based on 5143 Weissenberg-film data. The full-matrix, least-squares refinement gave R = 0.094 and ?? for V-O bond lengths of 0.008 A. The unit cell contains one V10O286- unit, two Zn(H2O)62+ groups, two K+ ions, and four additional water molecules. The decavanadate ion is an isolated group of ten condensed VO6 octahedra, six in a rectangular 2 x 3 array sharing edges, and four more, two fitted in above and two below by sharing sloping edges. The structure, which is based on a sodium-chloride-like arrangement of V and O atoms, has a close relationship to other isopoly complex molybdates, niobates, and tantalates. Strong distortions in the VO6 octahedra are analogous to square-pyramid and other special coordination features known in other vanadate structures.

Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

NASA Astrophysics Data System (ADS)

Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

2017-07-01

Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

Novel synthesis and structural analysis of zinc oxide nanoparticles for the non enzymatic glucose biosensor.

PubMed

Dayakar, T; Venkateswara Rao, K; Bikshalu, K; Rajendar, V; Park, Si-Hyun

2017-06-01

A non-enzymatic glucose biosensor was developed by utilizing the zinc oxide nanoparticles (ZnO NPs) synthesized by a novel green method using the leaf extract of Ocimum tenuiflorum. The structural, optical and morphological properties of ZnO NPs characterized by means of X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray (EDAX) spectroscopy, and transmission electron microscopy (TEM). The XRD analysis revealed that the ZnO NPs were crystalline and had a hexagonal wurtzite structure. The crystallite size measured by XRD was the same as that measured using SEM and TEM. The UV-vis absorption spectrum estimates the band gap of ZnO NPs present in the range of 2.82 to 3.45eV. The reduction and formation of ZnO NPs mainly due to the involvement of leaf extract bio-molecular compounds analyzed from the FTIR spectra. The SEM result confirms the morphology of the NPs responsible from the various concentration of leaf extract in the synthesis process. HRTEM analysis depicts the spherical structure of ZnO NPs. The synthesized NPs have the average size ranges from 10 to 20nm. The fabricated GCE/ZnO glucose sensor represents superior electro catalytic activity that has been observed for ZnO NPs with a reproducible sensitivity of 631.30μAmM -1 cm -2 , correlation coefficient of R=0.998, linear dynamic range from 1-8.6mM, low detection limit of 0.043μM (S/N=3) and response time<4s. Copyright © 2017 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yue; Yang, Meng-Lin; Hu, Huai-Ming, E-mail: ChemHu1@NWU.EDU.CN

Six new coordination polymers, [ZnLCl]{sub n}(1), [ZnL{sub 2}]{sub n}·2nH{sub 2}O (2), [Zn{sub 2}L(o-bdc)(OH)]{sub n}·0.5nH{sub 2}O (3), [Zn{sub 2}L(m-bdc)(OH)]{sub n}·nH{sub 2}O (4), [Zn{sub 2}L{sub 2}(p-bdc) (H{sub 2}O){sub 2}]{sub n}·nH{sub 2}O (5), [Zn{sub 2}L(1,2,4-btc)(H{sub 2}O)]{sub n}(6), (HL=4′-(3-carboxyphenyl)- 3,2′:6′,3″-terpyridine, H{sub 2}(o-bdc)= benzene-1,2-dicarboxylic acid, H{sub 2}(m-bdc)= benzene-1,3-dicarboxylic acid, H{sub 2}(p-bdc)= benzene-1,4-dicarboxylic acid, H{sub 3}(1,2,4-btc)= benzene-1,2,4-tricarboxylic acid) have been synthesized under the hydrothermal conditions. Compound 1 displays a 3-connected 2D network structure with point symbol of {8"2.10}. Compound 2 exhibits 1D infinite loop chain structure. Compound 3 possesses a (3,8)-connected 3D framework composed of tetranuclear units with point symbol of {4"3}{sub 2}{4"6.6"1"8.8"4}. Compound 4 featuresmore » a typical 2D hcb network based on tetranuclear zinc(II) units with point symbol of {4"4.6"2}. Compound 5 presents a classical two-fold penetration sql network with point symbol of {6"3}. Compound 6 can be seen as a (3,3,6)-connected 3D net with point symbol of {4"2.6"4.8"9}{4"2.6}{6"3}. The thermal stability and luminescent properties of compounds 1–6 in the solid state are discussed in detail. - Graphical abstract: Six new Zn(II) coordination polymers based on multicarboxylate and terpyridyl derivative ligands have synthesized under the hydrothermal conditions and the thermal stability and luminescence are discussed. Display Omitted.« less

Synthesis and characterization of novel electronic materials with volatile species

NASA Astrophysics Data System (ADS)

Zhizhong, Tang

In this thesis, two novel electronic materials, including semiconductor ZnGeAs2 and dielectric Ba(Zn1/3Ta 2/3)O3 were studied. The growth, characterization and application of ZnGeAs2 in photovoltaics were explored. The structure, optic and electric properties of expitaxial Ba(Zn1/3Ta2/3)O 3 films were also reported. ZnGeAs2 films were grown by pulsed laser deposition from the home-made target. The composition study showed that the Ge element incorporation rate remained constant, while the Zn and As incorporation rates decrease monotonically at elevated growth temperatures. Prototype of photovoltaic cell made with heterojunction p-ZnGeAs2/n-CdS/n+-SnO2 diode showed 0.14 Volt open circuit voltage under ˜100 mW/cm2 lab lamp illumination (1 sun) and 0.45 Volt Voc under 100 mW/cm 2 green LED illumination. Thermal decomposition studied of bulk ZnGeAs2 showed that the Zn and As dissociation rate from ZnGeAs2 approaches one monolayer per second at around 425 °C with activation energy of 1.08 eV. Thermodynamic and kinetic analysis showed that synthesis of ZnGeAs2 thin film is a metastable process involving a competition between the forward reaction which depends on the arrival of reactants at the growth surface, and the reverse kinetically-limited decomposition reaction. Ba(Zn1/3Ta2/3)O3 (100) dielectric thin films grown on MgO (100) substrates by pulsed laser deposition. The thin film structure, optic and electric properties were systematically characterized. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. The Ba(Zn1/3Ta2/3)O3 films have an indirect optical band gap of ˜3.0 eV and a refractive index of 1.91 in the visible spectral range, with dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz. The Ba(Zn1/3Ta 2/3)O3 films exhibit a small thermally-activated Ohmic leakage current at high fields (<250 KV/cm) and high temperatures (<200 °C) with an activation energy of 0.85 eV. Ba(Zn1/3Ta2/3)O3 dielectric ceramics powder was used to synthesize Metallo-Dielectric Electromagnetic Band Gap structures by ceramic injection molding. Capacitive series and shunt defects were introduced in Metallo-Dielectric Electromagnetic Band Gap structures to generate sub-wavelength resonances. The frequency responses of both defect-free and defect-laden EBG structures were characterized at microwave frequencies and were found to agree with the results of electromagnetic simulations using the commercial HFSS modeling package.

Effect of N2 flow during deposition on p-type ZnO film

NASA Astrophysics Data System (ADS)

Lin, Chiung-Wei; Liu, Bor-Chang

2017-01-01

In this study, the influence of a nitrogen source on p-type conductive ZnO films was studied. Rapid thermal oxidation was conducted to oxidize ZnN films and convert them to ZnO films. When an as-deposited ZnN film was prepared at a high nitrogen gas flow rate, the converted ZnO film possessed many acceptors and showed stable p-type conduction. This p-type conduction was attributed to the nitrogen gas flow providing many “No” states, which act as acceptors within the processed ZnO film. It was found that the as-deposited ZnN film prepared at a high nitrogen gas flow rate is oxidized slightly so that only a few nitrogen atoms were replaced by oxygen. The carrier concentration and mobility of the optimized oxidized ZnN film were 9.76 × 1017 cm-3 and 62.78 cm2 V-1 s-1, respectively. A good rectified current-voltage characteristic with a turn-on voltage of 3.65 V was achieved for the optimized ZnO:N/ZnO junction.

Improved photovoltaic properties of ZnTeO-based intermediate band solar cells

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Saito, Katsuhiko; Guo, Qixin; Yu, Kin Man; Walukiewicz, Wladek

2018-02-01

Highly mismatched ZnTe1-xOx (ZnTeO) alloy is one of the potential candidates for an absorber material in a bulk intermediate band solar cell (IBSC) because a narrow, O-derived intermediate band IB (E-) is formed well below the conduction band CB (E+) edge of the ZnTe. We have previously demonstrated the generation of photocurrent induced by two-step photon absorption (TSPA) in ZnTeO IBSCs using n-ZnO window layer. However, because of the large conduction band offset (CBO) between ZnTe and ZnO, only a small open circuit voltage (Voc) was observed in this structure. Here, we report our recent progress on the development of ZnTeO IBSCs with n-ZnS window layer. ZnS has a large direct band gap of 3.7 eV with an electron affinity of 3.9 eV that can realize a smaller CBO with ZnTe. We have grown n-type ZnS thin films on ZnTe substrates by molecular beam epitaxy (MBE), and demonstrated ZnTe solar cells and ZnTeO IBSCs using n-ZnS window layer with an improved VOC. Especially, a n-ZnS/i-ZnTe/p-ZnTe solar cell showed an improved Voc of 0.77 V, a large short-circuit current density of 6.7 mA/cm2 with a fill factor of 0.60, yielding the power conversion efficiency of 3.1 %, under 1 sun illumination.

TiO2-ZnS Cascade Electron Transport Layer for Efficient Formamidinium Tin Iodide Perovskite Solar Cells.

PubMed

Ke, Weijun; Stoumpos, Constantinos C; Logsdon, Jenna Leigh; Wasielewski, Michael R; Yan, Yanfa; Fang, Guojia; Kanatzidis, Mercouri G

2016-11-16

Achieving high open-circuit voltage (V oc ) for tin-based perovskite solar cells is challenging. Here, we demonstrate that a ZnS interfacial layer can improve the V oc and photovoltaic performance of formamidinium tin iodide (FASnI 3 ) perovskite solar cells. The TiO 2 -ZnS electron transporting layer (ETL) with cascade conduction band structure can effectively reduce the interfacial charge recombination and facilitate electron transfer. Our best-performing FASnI 3 perovskite solar cell using the cascaded TiO 2 -ZnS ETL has achieved a power conversion efficiency of 5.27%, with a higher V oc of 0.380 V, a short-circuit current density of 23.09 mA cm -2 , and a fill factor of 60.01%. The cascade structure is further validated with a TiO 2 -CdS ETL. Our results suggest a new approach for further improving the performance of tin-based perovskite solar cells with a higher V oc .

Investigation of radiation shielding properties for MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses

NASA Astrophysics Data System (ADS)

Sayyed, M. I.; Çelikbilek Ersundu, M.; Ersundu, A. E.; Lakshminarayana, G.; Kostka, P.

2018-03-01

In this work, glasses in the MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) system, which show a great potential for optoelectronic applications, were used to evaluate their resistance under high energy ionizing radiations. The basic shielding quantities for determining the penetration of radiation in glass, such as mass attenuation coefficient (μ/ρ), half value layer (HVL), mean free path (MFP) and exposure buildup factor (EBF) values were investigated within the energy range 0.015 MeV ‒ 15 MeV using XCOM program and variation of shielding parameters were compared with different glass systems and ordinary concrete. From the derived results, it was determined that MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses show great potentiality to be used under high energy radiations. Among the studied glass compositions, Bi2O3 and WO3 containing glasses were found to possess superior gamma-ray shielding effectiveness.

Antibacterial activity against Streptococcus mutans and diametrical tensile strength of an interim cement modified with zinc oxide nanoparticles and terpenes: An in vitro study.

PubMed

Andrade, Verónica; Martínez, Alejandra; Rojas, Ninón; Bello-Toledo, Helia; Flores, Paulo; Sánchez-Sanhueza, Gabriela; Catalán, Alfonso

2018-05-01

Interim restorations are occasionally left in the mouth for extended periods and are susceptible to bacterial infiltration. Thus, dental interim cements with antibacterial properties are required. The purpose of this in vitro study was to determine in vitro antibacterial activity against Streptococcus mutans and to compare the diametrical tensile strength (DTSs) of dental interim cement modified with zinc oxide nanoparticles (ZnO-NPs) with that of cement modified with terpenes. Antibacterial properties of ZnO-NPs, terpenes, and dental interim cement modified with ZnO-NPs and cement modified with terpenes against S mutans were tested according to minimum inhibitory concentration (MIC) and direct contact inhibition (DCI). Tensile strength levels were evaluated using DTS. Results were analyzed using the Kolmogorov-Smirnov, ANOVA, and Tamhane tests (α=.05). The MICs of ZnO-NPs and terpenes against S mutans were 61.94 μg/g and 0.25% v/v, respectively. The DCI assay under the cylinders of cement (area of contact with the agar surface) revealed significant bacterial growth inhibition on Temp-Bond NE specimens with ZnO-NPs at MIC of 495.2 μg/g (8× MIC) and with terpenes at MIC 0.999% v/v (4× MIC) (P<.05). The Temp-Bond NE cement cylinder (control group) showed the lowest DTS (1.05 ±0.27 MPa) of all other test groups. In the Zn-NPs group, the greatest increase occurred in the NP8 (8× MIC; 495.2 μg/g) group with a value of 1.50 ±0.23 MPa, a significant increase in DTS compared with the control and terpene groups (P<.05). In the terpene group, the highest increase corresponded to group T2 (2× MIC; 0.4995% v/v) with a value of 1.29 ±0.18 MPa. The addition of terpenes and ZnO-NPs to interim cement showed antibacterial activity when in contact with S. mutans ATCC 25175. Both terpenes and ZnO-NPs antimicrobial agents increased diametral tensile strength. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Investigations on photoelectrochemical performance of boron doped ZnO nanorods synthesized by facile hydrothermal technique

NASA Astrophysics Data System (ADS)

Sharma, Akash; Chakraborty, Mohua; Thangavel, R.

2018-05-01

Undoped and 10% Boron (B)-doped Zinc Oxide nanorods (ZnO NRs) on Tin doped Indium Oxide (ITO) coated glass substrates were synthesized using facile sol-gel, spin coating and hydrothermal method. The impact of adding Boron on the structural, optical properties, surface morphology and photoelectrochemical (PEC) performances of the ZnO NRs have been investigated. The XRD pattern confirmed the formation of pure hexagonal phase with space group P63mc (186). The same can also be clearly observed form the FESEM images. The UV-Vis study shows the narrowing in band gap from 3.22 eV to 3.19 eV with incorporation of Boron in ZnO matrix. The B-doped ZnO NRs sample shows an enhanced photocurrent density of 1.31 mA/cm2 at 0.5 V (vs. Ag/AgCl), which is more than 171% enhancement compared to bare ZnO NRs (0.483 mA/cm2) in 0.1 M Na2SO4 aqueous solution. The results clearly indicates that the boron doped ZnO NRs can be used as an efficient photoelectrode material for photoelectrochemical cell.

Study of cyanide removal from contaminated water using zinc peroxide nanomaterial.

PubMed

Uppal, Himani; Tripathy, S Swarupa; Chawla, Sneha; Sharma, Bharti; Dalai, M K; Singh, S P; Singh, Sukhvir; Singh, Nahar

2017-05-01

The present study highlights the potential application of zinc peroxide (ZnO 2 ) nanomaterial as an efficient material for the decontamination of cyanide from contaminated water. A process patent for ZnO 2 synthesis has been granted in United States of America (US Patent number 8,715,612; May 2014), South Africa, Bangladesh, and India. The ZnO 2 nanomaterial was capped with polyvinylpyrrolidone (PVP) to control the particle size. The PVP capped ZnO 2 nanomaterial (PVP-ZnO 2 ) before and after adsorption of cyanide was characterized by scanning electron microscope, transmission electron microscope, X-ray diffractometer, Fourier transform infrared spectroscopy and time of flight-secondary ion mass spectrometry. The remaining concentration of cyanide after adsorption by PVP-ZnO 2 was determined using ion chromatograph. The adsorption of cyanide over PVP-ZnO 2 was also studied as a function of pH, adsorbent dose, time and concentration of cyanide. The maximum removal of cyanide was observed in pH range 5.8-7.8 within 15min. The adsorption data was fitted to Langmuir and Fruendlich isotherm and it has been observed that data follows both the isotherms and also follows second order kinetics. Copyright © 2016. Published by Elsevier B.V.

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

PubMed Central

Li, Jyun-Yi; Chang, Sheng-Po; Hsu, Ming-Hung; Chang, Shoou-Jinn

2017-01-01

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on–off current ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of −5 V under 290 nm illumination. PMID:28772487

Formation of Isolated Zn Vacancies in ZnO Single Crystals by Absorption of Ultraviolet Radiation: A Combined Study Using Positron Annihilation, Photoluminescence, and Mass Spectroscopy

NASA Astrophysics Data System (ADS)

Khan, Enamul H.; Weber, Marc H.; McCluskey, Matthew D.

2013-07-01

Positron annihilation spectra reveal isolated zinc vacancy (VZn) creation in single-crystal ZnO exposed to 193-nm radiation at 100mJ/cm2 fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the VZn acceptor level at ˜100meV to the conduction band. The observed VZn density profile and hyperthermal Zn+ ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon—a novel photoelectronic process for controlled VZn creation in ZnO.

Low Work Function 2.81 eV Rb2CO3-Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes.

PubMed

Kim, Jeonggi; Kim, Hyo-Min; Jang, Jin

2018-06-06

We report a low work function (2.81 eV), Rb 2 CO 3 -doped polyethyleneimine ethoxylated (PEIE) which is used for highly efficient and long-lifetime, inverted organic light-emitting diodes (OLEDs). Doping Rb 2 CO 3 into PEIE decreases the work function of Li-doped ZnO (LZO) by 1.0 eV and thus significantly improves electron injection ability into the emission layer (EML). The inverted OLED with PEIE:Rb 2 CO 3 interfacial layer (IL) exhibits higher efficiency and longer operation lifetime than those of the device with a PEIE IL. It is found also that Mg-doped ZnO (MZO) can be used instead of LZO as electron transporting layer. Rb 2 CO 3 shows a low work function of 2.81 eV. The OLED with MZO/PEIE:Rb 2 CO 3 exhibits low operating voltage of 5.0 V at 1000 cd m -2 and low efficiency roll-off of 11.8% at high luminance of 10 000 cd m -2 . The results are due to the suppressed exciton quenching at the MZO/organic EML interface.

Hydrogen peroxide biosensor based on hemoglobin immobilized at graphene, flower-like zinc oxide, and gold nanoparticles nanocomposite modified glassy carbon electrode.

PubMed

Xie, Lingling; Xu, Yuandong; Cao, Xiaoyu

2013-07-01

In this work, a highly sensitive hydrogen peroxide (H2O2) biosensor based on immobilization of hemoglobin (Hb) at Au nanoparticles (AuNPs)/flower-like zinc oxide/graphene (AuNPs/ZnO/Gr) composite modified glassy carbon electrode (GCE) was constructed, where ZnO and Au nanoparticles were modified through layer-by-layer onto Gr/GCE. Flower-like ZnO nanoparticles could be easily prepared by adding ethanol to the precursor solution having higher concentration of hydroxide ions. The Hb/AuNPs/ZnO/Gr composite film showed a pair of well-defined, quasi-reversible redox peaks with a formal potential (E(0)) of -0.367 V, characteristic features of heme redox couple of Hb. The electron transfer rate constant (k(s)) of immobilized Hb was 1.3 s(-1). The developed biosensor showed a very fast response (<2 s) toward H2O2 with good sensitivity, wide linear range, and low detection limit of 0.8 μM. The fabricated biosensor showed interesting features, including high selectivity, acceptable stability, good reproducibility, and repeatability along with excellent conductivity, facile electron mobility of Gr, and good biocompatibility of ZnO and AuNPs. The fabrication method of this biosensor was simple and effective for determination of H2O2 in real samples with quick response, good sensitivity, high selectivity, and acceptable recovery. Copyright © 2013 Elsevier B.V. All rights reserved.

Energy conversion of X-ray, ultraviolet and infrared radiation in Gd2O3 crystals doped with Er3+ ions

NASA Astrophysics Data System (ADS)

Trofimova, E. S.; Pustovarov, V. A.; Kuznetsova, Yu. A.; Zatsepin, A. F.

2017-09-01

Spectra of photoluminescence (PL) and X-ray excited luminescence (XRL) in region of 1.5-5.0 eV, PL excitation spectra (2.8-5.8 eV), PL decay kinetics were measured in Gd2O3 crystals doped both with Er3+ and Zn2+ ions. Synchrotron radiation (VEPP-3 storage ring, Novosibirsk, Russia) were used for XRL measurements. PL spectra were studied at room temperature and T= 88 K under excitation with energy Eexc: a) in fundamental absorption region (Eexc≥Eg); b) in intracenter excitation region (Eexc

Transparent nanotubular capacitors based on transplanted anodic aluminum oxide templates.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Wu, Wenhui; Yue, Jin; Liu, Chang

2015-03-11

Transparent AlZnO/Al2O3/AlZnO nanocapacitor arrays have been fabricated by atomic layer deposition in anodic aluminum oxide templates transplanted on the AlZnO/glass substrates. A high capacitance density of 37 fF/μm(2) is obtained, which is nearly 5.8 times bigger than that of planar capacitors. The capacitance density almost remains the same in a broad frequency range from 1 kHz to 200 kHz. Moreover, a low leakage current density of 1.7 × 10(-7) A/cm(2) at 1 V has been achieved. The nanocapacitors exhibit an average optical transmittance of more than 80% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

High quality nitrogen-doped zinc oxide thin films grown on ITO by sol-gel method

NASA Astrophysics Data System (ADS)

Pathak, Trilok Kumar; Kumar, Vinod; Purohit, L. P.

2015-11-01

Highly transparent N-doped ZnO thin films were deposited on ITO coated corning glass substrate by sol-gel method. Ammonium nitrate was used as a dopant source of N with varying the doping concentration 0, 0.5, 1.0, 2.0 and 3.0 at%. The DSC analysis of prepared NZO sols is observed a phase transition at 150 °C. X-ray diffraction pattern showed the preferred (002) peak of ZnO, which was deteriorated with increased N concentrations. The transmittance of NZO thin films was observed to be ~88%. The bandgap of NZO thin films increased from 3.28 to 3.70 eV with increased N concentration from 0 to 3 at%. The maximum carrier concentration 8.36×1017 cm-3 and minimum resistivity 1.64 Ω cm was observed for 3 at% N doped ZnO thin films deposited on glass substrate. These highly transparent ZnO thin films can be used as a window layer in solar cells and optoelectronic devices.

Spinel and post-spinel phase assemblages in Zn 2TiO 4: an experimental and theoretical study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yanyao; Liu, Xi; Shieh, Sean R.

Zn2TiO4 spinel (Zn2TiO4-Sp) was synthesized by a solid-state reaction method (1573 K, room P and 72 h) and quasi-hydrostatically compressed to ~24 GPa using a DAC coupled with a synchrotron X-ray radiation (ambient T). We found that the Zn2TiO4-Sp was stable up to ~21 GPa and transformed to another phase at higher P. With some theoretical simulations, we revealed that this high-P phase adopted the CaTi2O4-type structure (Zn2TiO4-CT). Additionally, the isothermal bulk modulus (KT) of the Zn2TiO4-Sp was experimentally obtained as 156.0(44) GPa and theoretically obtained as 159.1(4) GPa, with its first pressure derivative K'TKT' as 3.8(6) and 4.37(4), respectively.more » The volumetric and axial isothermal bulk moduli of the Zn2TiO4-CT were theoretically obtained as KT = 150(2) GPa (K'TKT' = 5.4(2); for the volume), KT-a = 173(2) GPa (K'T-aKT-a' = 3.9(1); for the a-axis), KT-b = 74(2) GPa (K'T-bKT-b' = 7.0(2); for the b-axis), and KT-c = 365(8) GPa (K'T-cKT-c' = 1.5(4); for the c-axis), indicating a strong elastic anisotropy. The Zn2TiO4-CT was found as ~10.0 % denser than the Zn2TiO4-Sp at ambient conditions. The spinel and post-spinel phase assemblages for the Zn2TiO4 composition at high T have been deduced as Zn2TiO4-Sp, ZnTiO3-ilmenite + ZnO-wurtzite, ZnTiO3-ilmenite + ZnO-rock salt, ZnTiO3-perovskite + ZnO-rock salt, and Zn2TiO4-CT as P increases, which presumably implies a potential stability field for a CT-type Mg2SiO4 at very high P.« less

Effects of Sintering Holding Time on the Structural, Electrical and Magnetic Properties of Zn0.95Ni0.05O

NASA Astrophysics Data System (ADS)

Ginting, M.; Aryanto, D.; Kurniawan, C.; Sari, A. Y.; Subhan, A.; Sudiro, T.; Sebayang, P.; Tarigan, E. R.; Nasruddin, M. N.; Sebayang, K.

2017-05-01

Zn0.95Ni0.05O has been synthesized by mixing 5% mol of NiO into ZnO using solid state reaction and high-speed shaker mill method. The samples were sintered at 900 °C with holding time for 2, 4 and 8 hours. Crystal structure, electrical and magnetic properties of Zn0.95Ni0.05O were characterized by using XRD, I-V, C-V and VSM. XRD results showed that variation of holding time does not change the structure of ZnO and no other secondary phase observed. The value of lattice parameters (a and c) tends to decrease proportionally to the holding time. The Intensity value changes and the peak shifted to a higher 2θ angle due to holding time variation. In general, the conductance of Zn0.95Ni0.05O decreases and the magnetic properties decrease also as the holding time is increased.

Resonant tunneling diodes based on ZnO for quantum cascade structures (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hinkov, Borislav; Schwarz, Benedikt; Harrer, Andreas; Ristanic, Daniela; Schrenk, Werner; Hugues, Maxime; Chauveau, Jean-Michel; Strasser, Gottfried

2017-02-01

The terahertz (THz) spectral range (lambda 30µm - 300µm) is also known as the "THz-gap" because of the lack of compact semiconductor devices. Various real-world applications would strongly benefit from such sources like trace-gas spectroscopy or security-screening. A crucial step is the operation of THz-emitting lasers at room temperature. But this seems out of reach with current devices, of which GaAs-based quantum cascade lasers (QCLs) seem to be the most promising ones. They are limited by the parasitic, non-optical LO-phonon transitions (36meV in GaAs), being on the same order as the thermal energy at room temperature (kT = 26meV). This can be solved by using larger LO-phonon materials like ZnO (E_LO = 72meV). But to master the fabrication of ZnO-based QC structures, a high quality epitaxial growth is crucial followed by a well-controlled fabrication process including ZnO/ZnMgO etching. We use devices grown on m-plane ZnO-substrate by molecular beam epitaxy. They are patterned by reactive ion etching in a CH4-based chemistry (CH4:H2:Ar/30:3:3 sccm) into 50μm to 150μm square mesas. Resonant tunneling diode structures are investigated in this geometry and are presented including different barrier- and well-configurations. We extract contact resistances of 8e-5 Omega cm^2 for un-annealed Ti/Au contacts and an electron mobility of above 130cm^2/Vs, both in good agreement with literature. Proving that resonant electron tunneling can be achieved in ZnO is one of the crucial building blocks of a QCL. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 665107.

Quantum-dot-sensitized solar cells fabricated by the combined process of the direct attachment of colloidal CdSe quantum dots having a ZnS glue layer and spray pyrolysis deposition.

PubMed

Im, Sang Hyuk; Lee, Yong Hui; Seok, Sang Il; Kim, Sung Woo; Kim, Sang-Wook

2010-12-07

We were able to attach CdSe quantum dots (QDs) having a ZnS inorganic glue layer directly to a mesoporous TiO(2) (mp-TiO(2)) surface by spray coating and thermal annealing. Quantum-dot-sensitized solar cells based on CdSe QDs having ZnS as the inorganic glue layer could easily transport generated charge carriers because of the intimate bonding between CdSe and mp-TiO(2). The application of spray pyrolysis deposition (SPD) to obtain additional CdSe layers improved the performance characteristics to V(oc) = 0.45 V, J(sc) = 10.7 mA/cm(2), fill factor = 35.8%, and power conversion efficiency = 1.7%. Furthermore, ZnS post-treatment improved the device performance to V(oc) = 0.57 V, J(sc) = 11.2 mA/cm(2), fill factor = 35.4%, and power conversion efficiency = 2.2%.

Preparation, characterizations and photocatalytic activity of a ZnO/TiO2 nanocomposite

NASA Astrophysics Data System (ADS)

Lachom, Vichuda; Poolcharuansin, Phitsanu; Laokul, Paveena

2017-03-01

Nanoparticles of TiO2, ZnO and nanocomposite ZnO/TiO2 were prepared via a co-precipitation method. The precursor powders were calcined in air at 400 and 500 °C for 2 h. Crystallite sizes of the calcined samples ranged from 11-43 nm. The XRD patterns of ZnO/TiO2 powder showed two phases of anatase and wurtzite, with no ZnTiO3 impurity phase. TEM images showed three types of particles in the ZnO/TiO2 samples: a fine particle type of TiO2 and submicron ellipsoidal and rod-like particles of ZnO. The energy gap (E g) of the calcined powders was evaluated using UV-vis absorption spectra and found to be in the range of 3.15-3.60 eV. Photodegradation efficiencies of the prepared samples in methyl orange aqueous solution were investigated under UVA irradiation. The results showed that nanocomposite ZnO/TiO2 calcined at 400 °C exhibited the highest apparent rate constant (k), and a higher capacity for methyl orange removal than TiO2 and ZnO nanoparticles.

Zn(II) coordination polymers with flexible V-shaped dicarboxylate ligand: Syntheses, helical structures and properties

NASA Astrophysics Data System (ADS)

Li, Lin; Liu, Chong-Bo; Yang, Gao-Shan; Xiong, Zhi-Qiang; Liu, Hong; Wen, Hui-Liang

2015-11-01

Hydrothermal reactions of 2,2‧-[hexafluoroisopropylidenebis(p-phenyleneoxy)]diacetic acid (H2L) and zinc ions in the presence of N-donor ancillary ligands afford four novel coordination polymers, namely, [Zn2(μ2-OH)(μ4-O)0.5(L)]·0.5H2O (1), [Zn(L)(2,2‧-bipy)(H2O)] (2), [Zn3(L)3(phen)2]·H2O (3) and [Zn2(L)2(4,4‧-bipy)] (4) (2,2‧-bipy=2,2‧-bipyridine; 4,4‧-bipy=4,4‧-bipyridine; phen=1,10-phenanthroline). Their structures have been determined by single-crystal X-ray diffraction analyses, elemental analyses, IR spectra, powder X-ray diffraction (PXRD), and thermogravimetric (TG) analyses. Complex 1 shows a 3-D clover framework consisting of [Zn4(μ4-O)(μ2-OH)2]4+ clusters, and exhibits a novel (3,8)-connected topological net with the Schläfli symbol of {3·4·5}2{34·44·52·66·710·82}, and contains double-stranded and two kinds of meso-helices. 2 displays a helical chain structure, which is further extended via hydrogen bonds into a 3-D supramolecular structure with meso-helix chains. 3 displays a 2-D {44·62} parallelogram structure, which is further extended via hydrogen bonds into a 3-D supramolecular structure with single-stranded helical chains. 4 shows a 2-D {44·62} square structure with left- and right-handed helical chains. Moreover, the luminescent properties of 1-4 have been investigated.

Homologous compounds of type ARO3(ZnO)m in the system Ga-Sn-Zn-O

NASA Astrophysics Data System (ADS)

Eichhorn, Simon; Schmid, Herbert; Assenmacher, Wilfried; Mader, Werner

2017-02-01

Several members of hitherto unknown homologous compounds [Sn0.5Zn0.5]GaO3(ZnO)m (m=3-7) of the general formula ARO3(ZnO)m were prepared by solid state methods from the binary oxides in sealed Pt-tubes. UV-vis measurements confirm these compounds to be transparent oxides with an optical band gap in the UV region with Eg≈3 eV. Rietveld refinements on powder samples of [Sn0.5Zn0.5]GaO3(ZnO)m proved the compounds to be isostructural with InGaO3(ZnO)m, where In3+ on octahedral sites is replaced statistically by Sn4+ and Zn2+ in equal amounts preserving an average charge of 3+. Additionally, the structure of [Sn0.5Zn0.5]GaO3(ZnO)3 has been determined from flux-grown single crystals by X-ray diffraction (R 3 ̅ m , Z=3, a=3.2387(7) Å, c=41.78(1) Å, 19 parameters, 201 independent reflections, R1=0.047, wR2=0.074). The compound [Sn0.5Zn0.5]GaO3(ZnO)3 is isostructural with InGaO3(ZnO)3. [Sn0.5Zn0.5]GaO3(ZnO)3 was furthermore analyzed by High Angle Annular Dark Field (HAADF) scanning TEM and EELS spectroscopic imaging, supporting the structure model derived from X-ray diffraction data.

Magnetic solid-phase extraction using nanoporous three dimensional graphene hybrid materials for high-capacity enrichment and simultaneous detection of nine bisphenol analogs from water sample.

PubMed

Wang, Lingling; Zhang, Zhenzhen; Zhang, Jing; Zhang, Lei

2016-09-09

The synthesis of a magnetic nanoporous three dimensional graphene (3DG)/ZnFe2O4 composite has been achieved. Through formation of graphene hydrogel, ZnFe2O4 magnetic particles was successfully introduced into the nanoporous 3DG, resulting in a magnetic porous carbon material. The morphology, structure, and magnetic behavior of the as-prepared 3DG/ZnFe2O4 were characterized by using the techniques of SEM, XRD, BET, VSM, FTIR, Raman and TGA. The 3DG/ZnFe2O4 has a high specific surface area and super paramagnetism. Its performance was evaluated by the magnetic solid-phase extraction of nine bisphenol analogs (BPs) from water samples followed by HPLC analysis, and showed excellent adsorption capability for the nine target compounds. Under optimized condition, the lower method detection limits (0.05-0.18ngmL(-1)), the higher enrichment factors (800 fold) and good recoveries (95.1-103.8%) with relative standard deviation (RSD) values less than 6.2% were achieved. The results indicated that the developed method based on the use of 3DG/ZnFe2O4 as the magnetic adsorbent has the advantages of convenience and high efficiency, and can be successfully applied to detect the nine BPs in real water samples. Copyright © 2016 Elsevier B.V. All rights reserved.

Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Chang-Yong, E-mail: cynam@bnl.gov; Stein, Aaron; Kisslinger, Kim

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼10{sup 19 }cm{sup −3} carrier density, and ∼0.1 cm{sup 2} V{sup −1} s{sup −1} electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate themore » potential application of infiltration synthesis in fabricating metal oxide electronic devices.« less

Broad range tuning of structural and optical properties of Zn x Mg1-x O nanostructures grown by vapor transport method

NASA Astrophysics Data System (ADS)

Vanjaria, Jignesh V.; Azhar, Ebraheem Ali; Yu, Hongbin

2016-11-01

One-dimensional (1D) Zn x Mg1-x O nanomaterials have drawn global attention due to their remarkable chemical and physical properties, and their diverse current and future technological applications. In this work, 1D ZnMgO nanostructures with different magnesium concentrations and different morphologies were grown directly on zinc oxide-coated silicon substrates by thermal evaporation of zinc oxide, magnesium boride and graphite powders. Highly well-defined Mg-rich ZnMgO nanorods with a rock salt structure and Zn-rich ZnMgO nanostructures with a wurtzite structure have been deposited individually by careful optimization of the source mixture and process parameters. Structural and optical properties of the deposited products were studied by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy. Cathodoluminescence measurements demonstrate strong dominant peaks at 3.3 eV in Mg poor ZnMgO nanostructures and 4.8 eV in Mg rich nanostructures implying that the ZnMgO nanostructures can be used for the fabrication of deep UV optoelectronic devices. A mechanism for the formation and achieved diverse morphology of the ZnMgO nanostructures was proposed based on the characterization results.

Corrosion Behavior of Cu40Zn in Sulfide-Polluted 3.5% NaCl Solution

NASA Astrophysics Data System (ADS)

Song, Q. N.; Xu, N.; Bao, Y. F.; Jiang, Y. F.; Gu, W.; Yang, Z.; Zheng, Y. G.; Qiao, Y. X.

2017-10-01

The corrosion behavior of a duplex-phase brass Cu40Zn in clean and sulfide-polluted 3.5% NaCl solutions was investigated by conducting electrochemical and gravimetric measurements. The corrosion product films were analyzed by scanning electron microscopy, energy-dispersive spectroscopy and x-ray diffraction. The presence of sulfide shifted the corrosion potential of Cu40Zn toward a more negative value by 100 mV and increased the mass loss rate by a factor of 1.257 compared with the result in the clean solution. The corrosion product film in the clean solution was thin and compact; it mainly consisted of oxides, such as ZnO and Cu2O. By contrast, the film in the sulfide-polluted solution was thick and porous. It mainly contained sulfides and zinc hydroxide chloride (i.e., Zn5(OH)8Cl2·H2O). The presence of sulfide ions accelerated the corrosion damage of Cu40Zn by hindering the formation of protective oxides and promoting the formation of a defective film which consisted of sulfides and hydroxide chlorides.

Efficient Solar-Induced Photoelectrochemical Response Using Coupling Semiconductor TiO2-ZnO Nanorod Film

PubMed Central

Abd Samad, Nur Azimah; Lai, Chin Wei; Lau, Kung Shiuh; Abd Hamid, Sharifah Bee

2016-01-01

Efficient solar driven photoelectrochemical (PEC) response by enhancing charge separation has attracted great interest in the hydrogen generation application. The formation of one-dimensional ZnO nanorod structure without bundling is essential for high efficiency in PEC response. In this present research work, ZnO nanorod with an average 500 nm in length and average diameter of about 75 nm was successfully formed via electrodeposition method in 0.05 mM ZnCl2 and 0.1 M KCl electrolyte at 1 V for 60 min under 70 °C condition. Continuous efforts have been exerted to further improve the solar driven PEC response by incorporating an optimum content of TiO2 into ZnO nanorod using dip-coating technique. It was found that 0.25 at % of TiO2 loaded on ZnO nanorod film demonstrated a maximum photocurrent density of 19.78 mA/cm2 (with V vs. Ag/AgCl) under UV illumination and 14.75 mA/cm2 (with V vs. Ag/AgCl) under solar illumination with photoconversion efficiency ~2.9% (UV illumination) and ~4.3% (solar illumination). This performance was approximately 3–4 times higher than ZnO film itself. An enhancement of photocurrent density and photoconversion efficiency occurred due to the sufficient Ti element within TiO2-ZnO nanorod film, which acted as an effective mediator to trap the photo-induced electrons and minimize the recombination of charge carriers. Besides, phenomenon of charge-separation effect at type-II band alignment of Zn and Ti could further enhance the charge carrier transportation during illumination. PMID:28774068

Multilayer ZnO/Pd/ZnO Structure as Sensing Membrane for Extended-Gate Field-Effect Transistor (EGFET) with High pH Sensitivity

NASA Astrophysics Data System (ADS)

Rasheed, Hiba S.; Ahmed, Naser M.; Matjafri, M. Z.; Al-Hardan, Naif H.; Almessiere, Munirah Abdullah; Sabah, Fayroz A.; Al-Hazeem, Nabeel Z.

2017-10-01

Metal oxide nanostructures have attracted considerable attention as pH-sensitive membranes because of their unique advantages. Specifically, the special properties of ZnO thin film, including high surface-to-volume ratio, nontoxicity, thermal stability, chemical stability, electrochemical activity, and high mechanical strength, have attracted massive interest. ZnO exhibits wide bandgap of 3.37 eV, good biocompatibility, high reactivity, robustness, and environmental stability. These unique properties explain why ZnO has the most applications among all nanostructured metal oxides based on its structure and properties. Moreover, ZnO has excellent electrical characteristics, enabling its use in accurate sensors with rapid response. ZnO nanostructures can be used in novel pH and biomedical sensing applications. However, ZnO thin film exhibits large sheet resistance and low conductivity. Increasing the conductivity or reducing the resistivity of ZnO sensing membranes is important to achieve low impedance. We propose herein a new design using a multilayer ZnO/Pd/ZnO structure as a pH-sensing membrane. Multiple layers were deposited by radio frequency (RF) sputtering for ZnO and direct current (DC) sputtering for Pd to achieve low sheet resistance. These multilayers with low sheet resistance of 15.8 Ω/sq were then successfully used to control the conductivity in extended-gate field-effect transistors (EGFETs). The resulting multilayered EGFET pH-sensor demonstrated improved sensing performance. The measured sensitivity of the pH sensor was 40 μA/pH and 52 mV/pH within the pH range from 2 to 12, rendering this structure suitable for use in various applications, including pH sensors and biosensors.

Transition Metals in the Transition Zone: Crystal Chemistry of Minor Element Substitution in Wadsleyite

NASA Astrophysics Data System (ADS)

Zhang, L.

2015-12-01

As the most abundant solid phase at depths of 410 to 525 km, wadsleyite constitutes a large geochemical reservoir in the Earth. In order to better understand minor element substitution and cation ordering in wadsleyite, we have synthesized wadsleyite coexisting with pyroxene with 2 to 3 weight percent each of TiO2, Cr2O3, V2O3, CoO, NiO, and ZnO under hydrous conditions in separate experiments at 1300ºC and 15GPa. We have refined the crystal structures of these wadsleyites, analyzed the compositions by electron microprobe, and estimated M3 vacancy contents from b/a cell-parameter ratios. Trivalent cations, Fe, Cr and V, show a strong preference for M3 over M1 and M2 and significant substitution up to 2.8% at the tetrahedral site. Divalent Ni, Co, and Zn show site preferences similar to those of Fe2+ with M1≈ M3 > M2 > T. This site preference appears to be due crystal field stabilization energies rather than cation radius effects. Trivalent Cr, and V have much greater solubilities in wadsleyite than in olivine and so may be enriched in a melt or an accessory phase if hydrous melting occurs on upward convection across the wadsleyite-olivine boundary and may be useful as indicators of high pressure origin.

In Vitro and In Vivo Evaluation of Zinc-Modified Ca–Si-Based Ceramic Coating for Bone Implants

PubMed Central

Zheng, Xuebin; He, Dannong; Ye, Xiaojian; Wang, Meiyan

2013-01-01

The host response to calcium silicate ceramic coatings is not always favorable because of their high dissolution rates, leading to high pH within the surrounding physiological environment. Recently, a zinc-incorporated calcium silicate-based ceramic Ca2ZnSi2O7 coating, developed on a Ti-6Al-4V substrate using plasma-spray technology, was found to exhibit improved chemical stability and biocompatibility. This study aimed to investigate and compare the in vitro response of osteoblastic MC3T3-E1 cells cultured on Ca2ZnSi2O7 coating, CaSiO3 coating, and uncoated Ti-6Al-4V titanium control at cellular and molecular level. Our results showed Ca2ZnSi2O7 coating enhanced MC3T3-E1 cell attachment, proliferation, and differentiation compared to CaSiO3 coating and control. In addition, Ca2ZnSi2O7 coating increased mRNA levels of osteoblast-related genes (alkaline phosphatase, procollagen α1(I), osteocalcin), insulin-like growth factor-I (IGF-I), and transforming growth factor-β1 (TGF-β1). The in vivo osteoconductive properties of Ca2ZnSi2O7 coating, compared to CaSiO3 coating and control, was investigated using a rabbit femur defect model. Histological and histomorphometrical analysis demonstrated new bone formation in direct contact with the Ca2ZnSi2O7 coating surface in absence of fibrous tissue and higher bone-implant contact rate (BIC) in the Ca2ZnSi2O7 coating group, indicating better biocompatibility and faster osseointegration than CaSiO3 coated and control implants. These results indicate Ca2ZnSi2O7 coated implants have applications in bone tissue regeneration, since they are biocompatible and able to osseointegrate with host bone. PMID:23483914

In vitro and in vivo evaluation of zinc-modified ca-si-based ceramic coating for bone implants.

PubMed

Yu, Jiangming; Li, Kai; Zheng, Xuebin; He, Dannong; Ye, Xiaojian; Wang, Meiyan

2013-01-01

The host response to calcium silicate ceramic coatings is not always favorable because of their high dissolution rates, leading to high pH within the surrounding physiological environment. Recently, a zinc-incorporated calcium silicate-based ceramic Ca2ZnSi2O7 coating, developed on a Ti-6Al-4V substrate using plasma-spray technology, was found to exhibit improved chemical stability and biocompatibility. This study aimed to investigate and compare the in vitro response of osteoblastic MC3T3-E1 cells cultured on Ca2ZnSi2O7 coating, CaSiO3 coating, and uncoated Ti-6Al-4V titanium control at cellular and molecular level. Our results showed Ca2ZnSi2O7 coating enhanced MC3T3-E1 cell attachment, proliferation, and differentiation compared to CaSiO3 coating and control. In addition, Ca2ZnSi2O7 coating increased mRNA levels of osteoblast-related genes (alkaline phosphatase, procollagen α1(I), osteocalcin), insulin-like growth factor-I (IGF-I), and transforming growth factor-β1 (TGF-β1). The in vivo osteoconductive properties of Ca2ZnSi2O7 coating, compared to CaSiO3 coating and control, was investigated using a rabbit femur defect model. Histological and histomorphometrical analysis demonstrated new bone formation in direct contact with the Ca2ZnSi2O7 coating surface in absence of fibrous tissue and higher bone-implant contact rate (BIC) in the Ca2ZnSi2O7 coating group, indicating better biocompatibility and faster osseointegration than CaSiO3 coated and control implants. These results indicate Ca2ZnSi2O7 coated implants have applications in bone tissue regeneration, since they are biocompatible and able to osseointegrate with host bone.

Foliar zinc biofortification effects in Lolium rigidum and Trifolium subterraneum grown in cadmium-contaminated soil

PubMed Central

Damon, Paul; Rengel, Zed

2017-01-01

Zinc (Zn) is an important micronutrient that can alleviate cadmium (Cd) toxicity to plants and limit Cd entry into the food chain. However, little is known about the Zn-Cd interactions in pasture plants. We characterized the effects of foliar Zn application and Cd uptake by ryegrass (Lolium rigidum L.) and clover (Trifolium subterraneum L.) grown on Cd-contaminated soils; all combinations of foliar Zn applications (0, 0.25 and 0.5% (w/v) ZnSO4·7H2O) and soil Cd concentrations (0, 2.5 and 5 mg Cd kg-1) were tested. For both plant species, soil concentrations of DTPA-extractable Cd and Zn increased with an increase in the Cd and Zn treatments, respectively. Compared with L. rigidum, T. subterraneum accumulated, respectively, 3.3- and 4.1-fold more Cd in the 2.5-Cd and 5-Cd treatments and about 1.3-, 2.3- and 2.8-fold more Zn in the No-Zn, 0.25-Zn and 0.5-Zn treatments. Also, DTPA-Zn concentration was higher in soil after T. subterraneum than L. rigidum growth regardless of Zn applications. Foliar application of 0.25% (w/v) Zn significantly decreased the total Cd concentration in shoots of both species grown in the Cd-contaminated soil and ameliorated the adverse effects of Cd exposure on root growth, particularly in T. subterraneum. PMID:28950025

Bandgap tuning in highly c-axis oriented Zn1-xMgxO thin films

NASA Astrophysics Data System (ADS)

Kumar, Parmod; Malik, Hitendra K.; Ghosh, Anima; Thangavel, R.; Asokan, K.

2013-06-01

We propose Mg doping in zinc oxide (ZnO) films for realizing wider optical bandgap in highly c-axis oriented Zn1-xMgxO (0 ≤ x ≤ 0.3) thin films. A remarkable enhancement of 25% in the bandgap by 30% Mg doping was achieved. The bandgap was tuned between 3.25 eV (ZnO) and 4.06 eV (Zn0.7Mg0.3O), which was further confirmed by density functional theory based wien2k simulation employing a combined generalized gradient approximation with scissor corrections. The change of stress and crystallite size in these films were found to be the causes for the observed blueshift in the bandgap.

Effect of varying Ga content in ZnO:GaN solid solution synthesized by solution combustion technique for photocatalytic applications

NASA Astrophysics Data System (ADS)

Menon, Sumithra Sivadas; Janani, R.; Baskar, K.; Gupta, Bhavana; Singh, Shubra

2017-05-01

ZnO:GaN (oxy)nitride solid solution has been established as the most efficient non-oxide photocatalyst for water splitting under visible irradiation with one step photoexcitation and also boasts a band gap tunability from 2.8 eV to 2.5 eV[1]. The solid solution of GaN in ZnO is formed by the intersubstitution of few of Zn/O ions by Ga/N ions, and this results in the introduction of new defect levels above the valence band which narrows the effective band gap enabling activity under visible region of spectra. In this work, we report the synthesis of ZnO:GaN solid solution by a solution combustion technique where metal nitrates and urea are used as precursors. The Zn/Ga ratio was varied from 16 to 1 in the precursors. The as synthesized samples were characterized as phase pure by X-ray diffraction, where the wurtzite structure was retained up to Zn/Ga ratio of 5. The Diffuse reflectance spectroscopy studies revealed that as the Ga content in the solid solution increases there is a reduction in band gap, from 2.9 eV to 2.4 eV. The reduced band gap of the samples facilitates its photocatalytic activity under visible region of the spectra as evaluated by photoelectrochemical measurements.

A flexible and transparent graphene/ZnO nanorod hybrid structure fabricated by exfoliating a graphite substrate

NASA Astrophysics Data System (ADS)

Nam, Gwang-Hee; Baek, Seong-Ho; Cho, Chang-Hee; Park, Il-Kyu

2014-09-01

We demonstrate the fabrication of a graphene/ZnO nanorod (NR) hybrid structure by mechanical exfoliation of ZnO NRs grown on a graphite substrate. We confirmed the existence of graphene sheets on the hybrid structure by analyzing the Raman spectra and current-voltage (I-V) characteristics. The Raman spectra of the exfoliated graphene/ZnO NR hybrid structure show G and 2D band peaks that are shifted to lower wavenumbers, indicating that the exfoliated graphene layer exists under a significant amount of strain. The I-V characteristics of the graphene/ZnO NR hybrid structure show current flow through the graphene layer, while no current flow is observed on the ZnO NR/polydimethylsiloxane (PDMS) composite without graphene, thereby indicating that the few-layer graphene was successfully transferred onto the hybrid structure. A piezoelectric nanogenerator is demonstrated by using the fabricated graphene/ZnO NR hybrid structure. The nanogenerator exhibits stable output voltage up to 3.04 V with alternating current output characteristics.We demonstrate the fabrication of a graphene/ZnO nanorod (NR) hybrid structure by mechanical exfoliation of ZnO NRs grown on a graphite substrate. We confirmed the existence of graphene sheets on the hybrid structure by analyzing the Raman spectra and current-voltage (I-V) characteristics. The Raman spectra of the exfoliated graphene/ZnO NR hybrid structure show G and 2D band peaks that are shifted to lower wavenumbers, indicating that the exfoliated graphene layer exists under a significant amount of strain. The I-V characteristics of the graphene/ZnO NR hybrid structure show current flow through the graphene layer, while no current flow is observed on the ZnO NR/polydimethylsiloxane (PDMS) composite without graphene, thereby indicating that the few-layer graphene was successfully transferred onto the hybrid structure. A piezoelectric nanogenerator is demonstrated by using the fabricated graphene/ZnO NR hybrid structure. The nanogenerator exhibits stable output voltage up to 3.04 V with alternating current output characteristics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr02318h

Anthracene-Based Organic Small-Molecule Electron-Injecting Material for Inverted Organic Light-Emitting Diodes.

PubMed

Matsuo, Yutaka; Okada, Hiroshi; Kondo, Yasuhiro; Jeon, Il; Wang, Huan; Yu, Yun; Matsushita, Takeshi; Yanai, Motoki; Ikuta, Toshiaki

2018-04-11

A diphenylanthracene dimethylamine derivative (9-{3,5-di( N, N-dimethylaminoethoxy)phenyl}-10-phenyl-anthracene, DPAMA) was synthesized by the Suzuki-Miyaura cross-coupling reaction. Its ammonium salt, 9-{3,5-di(trimethylammonium ethoxy)phenyl}-10-phenyl-anthracene dichloride (DPAMA-Cl), was also synthesized as a reference material. DPAMA was characterized by UV-vis and fluorescence spectroscopy, cyclic voltammetry, photoelectron yield spectroscopy, and X-ray photoelectron spectroscopy to evaluate the work function-modifying ability of DPAMA on indium tin oxide (ITO) and ZnO. The work functions of ITO and ZnO changed from 4.4 and 4.0 eV (pristine) to 3.8 and 3.9 eV, respectively. Using this surface modification effect of DPAMA, inverted organic light-emitting diodes were fabricated with device structures of ITO/DPAMA/Alq 3 /NPD/MoO 3 /Al (Alq 3 = tris(8-hydroxyquinolinato)aluminum; NPD = N, N'-di-[(1-naphthyl)- N, N'-diphenyl]-1,1'-(biphenyl)-4,4'-diamine) and ITO/ZnO/DPAMA/Alq 3 /NPD/MoO 3 /Al. Both devices showed good performance at the range of current density, 1-300 mA/cm 2 . The best inverted organic light-emitting diodes device showed luminance of 7720 cd/m 2 , current efficiency of 4.51 cd/A, and external quantum efficiency of 1.45%. Also, poly(3-hexylthiophene):mixed phenyl-C 61 and C 71 butyric acid methyl ester-based organic solar cells using DPAMA and DPAMA-Cl as electron-transporting materials showed power conversion efficiencies of 3.3 and 3.4%, respectively.

A detailed study on Sn4+ doped ZnO for enhanced photocatalytic degradation

NASA Astrophysics Data System (ADS)

Beura, Rosalin; Pachaiappan, R.; Thangadurai, P.

2018-03-01

The samples of Sn4+ doped (1, 5, 10, 15, 20 & 30%) ZnO nanostructures were synthesized by a low temperature hydrothermal method. Structural analysis by XRD and Raman spectroscopy showed the hexagonal wurtzite phase of ZnO and the formation of a secondary phase Zn2SnO4 beyond 10% doping of Sn4+. Microstructural analysis by TEM also confirmed the wurtzite ZnO with rod as well as particle like structure. Presence of various functional groups (sbnd OH, sbnd CH, Znsbnd O) were confirmed by FTIR. Optical properties were studied by UV-vis absorption, photoluminescence emission spectroscopies and lifetime measurement. Band gap of the undoped and Sn4+ doped ZnO were analyzed by Tauc plot and it was observed that the band gap of the materials had slightly decreased from 3.2 to 3.16 eV and again increased to 3.23 eV with respect to the increase in the doping concentration from 1 to 30%. A significant change was also noticed in the photoluminescence emission properties of ZnO i.e. increase in the intensity of NBE emission and decrease in DLE, on subject to Sn4+ doping. Average PL lifetime had increased from 29.45 ns for ZnO to 30.62 ns upon 1% Sn ion doping in ZnO. Electrical properties studied by solid state impedance spectroscopy showed that the conductivity had increased by one order of magnitude (from 7.48×10-8 to 2.21×10-7 S/cm) on Sn4+ doping. Photocatalytic experiments were performed on methyl orange (MO) as a model industrial dye under UV light irradiation for different irradiation times. The optimum Sn4+ content in order to achieve highest photocatalytic activity was found to be 1% Sn 4+ doping. The enhancement was achieved due to a decrease in the band gap favoring the generation of electron-hole pairs and the enhanced PL life time that delays the recombination of these charge carrier formation. The third reason was that the increased electrical conductivity that indicated the faster charge transfer in this material to enhance the photocatalytic activity. The Sn doped ZnO was found to be more photostable than pure ZnO.

Crystal structure of dimanganese(II) zinc bis­[ortho­phosphate(V)] monohydrate

PubMed Central

Alhakmi, Ghaleb; Assani, Abderrazzak; Saadi, Mohamed; El Ammari, Lahcen

2015-01-01

The title compound, Mn2Zn(PO4)2·H2O, was obtained under hydro­thermal conditions. The structure is isotypic with other transition metal phosphates of the type M 3− xM′x(PO4)2·H2O, but shows no statistical disorder of the three metallic sites. The principal building units are distorted [MnO6] and [MnO5(H2O)] octa­hedra, a distorted [ZnO5] square pyramid and two regular PO4 tetra­hedra. The connection of the polyhedra leads to a framework structure. Two types of layers parallel to (-101) can be distinguished in this framework. One layer contains [Zn2O8] dimers linked to PO4 tetra­hedra via common edges. The other layer is more corrugated and contains [Mn2O8(H2O)2] dimers and [MnO6] octa­hedra linked together by common edges. The PO4 tetra­hedra link the two types of layers into a framework structure with channels parallel to [101]. The H atoms of the water mol­ecules point into the channels and form O—H⋯O hydrogen bonds (one of which is bifurcated) with framework O atoms across the channels. PMID:25878806

Pulsed laser deposited BexZn1-xO1-ySy quaternary alloy films: structure, composition, and band gap bowing

NASA Astrophysics Data System (ADS)

Zhang, Wuzhong; Xu, Maji; Zhang, Mi; Cheng, Hailing; Li, Mingkai; Zhang, Qingfeng; Lu, Yinmei; Chen, Jingwen; Chen, Changqing; He, Yunbin

2018-03-01

In this work, c-axis preferentially oriented BexZn1-xO1-ySy (BeZnOS) quaternary alloy films were prepared successfully on c-plane sapphire by pulsed laser deposition for the first time. By appropriate adjustment of O2 pressure during the deposition, the grown films exhibited a single-phase hexagonal structure and good crystalline quality. The solid solubility of S in BexZn1-xO1-ySy quaternary alloy was significantly expanded (y ≤ 0.17 or y ≥ 0.35) as a result of simultaneous substitution of cation Zn2+ by smaller Be2+ and anion O2- by bigger S2-. Besides, due to the introduction of BeO with a wide band gap, BeZnOS quaternary films exhibited wider band gaps than the ternary ZnOS films with similar S contents. As the O2 pressure increased from 0.05 Pa to 6 Pa, the band gap of BeZnOS displayed an interesting bowing behavior. The variation range of the band gap was between 3.55 eV and 3.10 eV. The BeZnOS films with a wide band gap show potential applications in fabricating optoelectronic devices such as UV-detectors.

Diverse Zn(II) MOFs assembled from V-shaped asymmetric multicarboxylate and N-donor ligands

NASA Astrophysics Data System (ADS)

Ye, Run-Ping; Yang, Jin-Xia; Zhang, Xin; Zhang, Lei; Yao, Yuan-Gen

2016-02-01

By reacting an asymmetry semi-rigid V-shaped linker H3L (H3L = 3-(3-carboxyphenoxy) phthalic acid) and Zn(NO3)2·6H2O under different N-donor ligands in different solvents, four new Zn-based coordination polymers, [Zn(HL)(2,2‧-bpy)(H2O)]n(1), [Zn(HL)(4,4‧-bpy)]n·n(DMA) (2), [Zn3(L)2(phen)3(H2O)]n·n(H2O) (3) and [Zn(HL)(phen)(H2O)]2(4) (2,2‧-bpy = 2,2‧-bipyridine; 4,4‧-bpy = 4,4‧-bipyridine; phen = 1,10-phenanthroline; DMA = N,N-dimethylacetamide) have been obtained. All of these compounds have been clearly identified by single crystal X-ray diffraction analysis. Compound 1 exhibits one-dimensional (1D) chain structure constructed from uninuclear Zn(II) motif, which further extends into 2D supramolecular architecture via intermolecular π-π interactions and hydrogen bonds. Structural analysis reveals that the structure of 2 and 3 can be described as a 2D hcb topology network with the point symbol of {63}. Compound 4 shows a 0D binuclear motif while its 3D packing network has a large potential solvent voids. The results of this research demonstrate that the solvent and the secondary ligands could co-regulate different structural coordination polymers with interesting properties. In addition, the thermal stabilities and solid-state luminescence properties of compounds 1-4 have also been investigated.

Anomalous antibacterial activity and dye degradation by selenium doped ZnO nanoparticles.

PubMed

Dutta, Raj Kumar; Nenavathu, Bhavani Prasad; Talukdar, Soumita

2014-02-01

Selenium doped ZnO nanoparticles synthesized by mechanochemical method were spherically shaped of size distribution of 10.2±3.4 nm measured by transmission electron microscopy. Diffused reflectance spectroscopy revealed increase in the band gap, ranging between 3.47 eV and 3.63 eV due to Se doping in ZnO nanoparticles. The antibacterial activity of pristine and Se doped ZnO nanoparticles was attributed to ROS (reactive oxygen species) generation in culture media confirmed by TBARS assay. Compared to complete inhibition of growth by 0.45 mg/mL of pristine ZnO nanoparticles, the batches of 0.45 mg/mL of selenium doped ZnO nanoparticles exhibited only 51% inhibition of growth of Escherichia coli. The reduced antibacterial activity of selenium doped ZnO nanoparticles was attributed to two opposing factors, e.g., ROS generation for inhibition of growth, countered by sustaining growth of E. coli due to availability of Se micronutrients in culture media, confirmed by inductively coupled plasma mass spectrometer measurement. Higher ROS generation by selenium doped ZnO nanoparticles was attributed to creation of oxygen vacancies, confirmed from green emission peak observed at 565 nm. The impact of higher ROS generation by selenium doped ZnO nanoparticles was evident from enhanced photocatalytic degradation of trypan blue dye, than pristine ZnO nanoparticles. Copyright © 2013 Elsevier B.V. All rights reserved.

Effects of Ta2O5 Addition on Electrical Properties of ZnO-V2O5 Based Varistor Ceramics

NASA Astrophysics Data System (ADS)

Fan, J. W.; Zhao, H. J.; Zhang, X. L.

2018-05-01

ZnO varistors are widely used for the protection of electronic and electrical equipment against transient surges. ZnO–V2O5 based varistor system is a potential candidate which can co-fire with Ag, and avoids the use of expensive Pa and Pt as the inner electrode in making multilayer chip varistors. However, the study of ZnO–V2O5-based ceramics is still in the initial stage for practical applications. The current work reports the effects of Ta2O5 on the electrical properties of ZnO-V2O5 based varistor ceramics. It shows that within 850-925°C experimental sintering temperature, the addition of Ta2O5 (0.05-0.20 mol%) may not improve the nonlinear coefficient but reduces the breakdown field of ZnO–V2O5 varistor ceramics.

Radical Beam Gettering Epitaxy of Zno and Gan

NASA Astrophysics Data System (ADS)

Georgobiani, A. N.; Demin, V. I.; Vorobiev, M. O.; Gruzintsev, A. N.; Hodos, I. I.; Kotljarevsky, M. B.; Kidalov, V. V.; Rogozin, I. V.

2002-11-01

P-type ZnO layers with a hole mobility about 23 cm2/(V s), and a hole concentration about 1015 cm-3 were grown by means of radical-beam gettering epitaxy (the annealing of n-ZnO single crystals in atomic oxygen flux). The effect of native defects on the photoluminescence spectra of the layers was studied. The dominant bands in the spectra peaked at 370.2 and 400 nm. These bands were attributed to the annihilation of exciton localised on neutral Vzn and to electron transitions from the conduction band to singly positively charged Vzn correspondingly. The effect of annealing in atomic nitrogen flux of p-CaN:Mg films on their photoluminescence spectra and on the value of their conductivity were studied. Such annealing leads to appearance of a number of emission bands that peaked at 404.9, 390.8 and 378.9 nm and increases hole concentration from 5 × 1015 to 5 × 1016 cm-3, and the hole mobility from 120 to 150 cm2/(V s). The n-ZnO - p-GaN:Mg electroluminescence heterostructures were obtained. Their spectrum contains bands in the excitonic region of GaN at the wavelength 360.2 nm and in the edge region at wavelengths 378.9 and 390.8 nm.

Microwave-assisted synthesis of C-doped TiO2 and ZnO hybrid nanostructured materials as quantum-dots sensitized solar cells

NASA Astrophysics Data System (ADS)

Rangel-Mendez, Jose R.; Matos, Juan; Cházaro-Ruiz, Luis F.; González-Castillo, Ana C.; Barrios-Yáñez, Guillermo

2018-03-01

The microwave-assisted solvothermal synthesis of C-doped TiO2 and ZnO hybrid materials was performed. Saccharose, titanium isopropoxide and zinc acetate were used as organic and inorganic sources for the synthesis. The influence of temperature and reaction time on the textural and optoelectronic properties of the hybrid materials was verified. Carbon quantum-dots of TiO2 and ZnO nanostructured spheres were obtained in a second pot by controlled calcination steps of the precursor hybrid materials. A carefully characterization by adsorption-desorption N2 isotherms, XRD, XPS, SEM, UV-vis/DR and electro- and photo-electrochemistry properties of the carbon quantum-dots TiO2 and ZnO spheres was performed. The photoelectrochemical activity of TiO2-C and ZnO-C films proved to be dependent on the conditions of synthesis. It was found a red-shift in the energy band gap of the semiconductors with values of 3.02 eV and 3.13 eV for the TiO2-C and ZnO-C, respectively, clearly lower than those on bare semiconductors, which is associated with the C-doping effect. From the photo-electrochemistry characterization of C-doped TiO2 and ZnO films can be concluded that the present materials have potential applications as photoelectrodes for quantum-dots sensitized solar cells.

Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

NASA Astrophysics Data System (ADS)

Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

2018-06-01

In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

Role of Zn doping in oxidative stress mediated cytotoxicity of TiO2 nanoparticles in human breast cancer MCF-7 cells

NASA Astrophysics Data System (ADS)

Ahamed, Maqusood; Khan, M. A. Majeed; Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws

2016-07-01

We investigated the effect of Zn-doping on structural and optical properties as well as cellular response of TiO2 nanoparticles (NPs) in human breast cancer MCF-7 cells. A library of Zn-doped (1-10 at wt%) TiO2 NPs was prepared. Characterization data indicated that dopant Zn was incorporated into the lattice of host TiO2. The average particle size of TiO2 NPs was decreases (38 to 28 nm) while the band gap energy was increases (3.35 eV-3.85 eV) with increasing the amount of Zn-doping. Cellular data demonstrated that Zn-doped TiO2 NPs induced cytotoxicity (cell viability reduction, membrane damage and cell cycle arrest) and oxidative stress (reactive oxygen species generation & glutathione depletion) in MCF-7 cells and toxic intensity was increases with increasing the concentration of Zn-doping. Molecular data revealed that Zn-doped TiO2 NPs induced the down-regulation of super oxide dismutase gene while the up-regulation of heme oxygenase-1 gene in MCF-7 cells. Cytotoxicity induced by Zn-doped TiO2 NPs was efficiently prevented by N-acetyl-cysteine suggesting that oxidative stress might be the primarily cause of toxicity. In conclusion, our data indicated that Zn-doping decreases the particle size and increases the band gap energy as well the oxidative stress-mediated toxicity of TiO2 NPs in MCF-7 cells.

Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure

NASA Astrophysics Data System (ADS)

Li, Qi; Qian, Lirong; Fu, Sulei; Song, Cheng; Zeng, Fei; Pan, Feng

2018-04-01

Characteristics of one-port surface acoustic wave (SAW) resonators fabricated on ZnO/6H-SiC layered structure were investigated experimentally and theoretically. Phase velocities (V p), electromechanical coupling coefficients (K 2), quality factors (Q), and temperature coefficients of frequency (TCF) of Rayleigh wave (0th mode) and first- and second-order Sezawa wave (1st and 2nd modes, respectively) for different piezoelectric film thickness-to-wavelength (h ZnO /λ) ratios were systematically studied. Results demonstrated that one-port SAW resonators fabricated on the ZnO/6H-SiC layered structure were promising for high-frequency SAW applications with moderate K 2 and TCF values. A high K 2 of 2.44% associated with a V p of 5182 m s‑1 and a TCF of  ‑41.8 ppm/°C was achieved at h ZnO /λ  =  0.41 in the 1st mode, while a large V p of 7210 m s‑1 with a K 2 of 0.19% and a TCF of  ‑36.4 ppm/°C was obtained for h ZnO /λ  =  0.31 in the 2nd mode. Besides, most of the parameters were reported for the first time and will be helpful for the future design and optimization of SAW devices fabricated on ZnO/6H-SiC layered structures.

Batagayite, CaZn2(Zn,Cu)6(PO4)4(PO3OH)3·12H2O, a new phosphate mineral from Këster tin deposit (Yakutia, Russia): occurrence and crystal structure

NASA Astrophysics Data System (ADS)

Yakovenchuk, Victor N.; Pakhomovsky, Yakov A.; Konopleva, Nataliya G.; Panikorovskii, Taras L.; Bazai, Ayya; Mikhailova, Julia A.; Bocharov, Vladimir N.; Ivanyuk, Gregory Yu.; Krivovichev, Sergey V.

2017-12-01

Batagayite, CaZn2(Zn,Cu)6(PO4)4(PO3OH)3·12H2O, is a new secondary phosphate mineral from the Këster deposit, Arga-Ynnykh-Khai massif, NE Yakutia, Russia. It is monoclinic, P21, a = 8.4264(4), b = 12.8309(6), c = 14.6928(9) Å, β = 98.514(6)o, V = 1571.05(15) Å3 and Z = 2 (from single-crystal X-ray diffraction data). Batagayite crystals are blades up to 2 mm long, flattened on {001} and elongated on [100]; blades often grow in radial aggregates. Associated minerals are arsenolite, native copper, epifanovite, fluorapatite, libethenite, Na-analogue of batagayite, pseudomalachite, quartz, sampleite, tobermorite, and Mg-analogue of hopeite. The streak is white and the luster is vitreous. The mineral is brittle and has a perfect cleavage on {001}, no parting was observed. The Mohs hardness is 3. Density, determined by the float-sink method in Clerici solution, is 2.90(3) g/cm3, and the calculated density is 3.02 g/cm3 (using the empirical formula and single-crystal unit-cell parameters). Batagayite is biaxial, optically negative, α = 1.566 ± 0.002, β = 1.572 ± 0.002, γ = 1.573 ± 0.002 at 589 nm. 2V meas. = 40(5)°, 2V calc = 44.3°. Optical orientation: Z is perpendicular to (001), further details unclear. No dispersion or pleochroism were observed. The mean chemical composition determined by electron microprobe is: Na2O 0.31, MgO 1.39, Al2O3 0.55, SiO2 0.48, P2O5 34.37, K2O 0.17, CaO 2.76, MnO 1.03, CuO 5.80, ZnO 35.62, CdO 0.24 wt%. The H2O content estimated from the crystal-structure refinement is 16.83 wt%, giving a total of 99.55 wt%. The empirical formula calculated on the basis of P + Si = 7 is (Zn6.22Cu1.04Ca0.70Mg0.49Mn0.21Al0.15Na0.14K0.05Cd0.03)Σ9.03(P6.89Si0.11)Σ7.00O24.91(OH)3.09·12.10H2O. The mineral easily dissolves in 10% room-temperature HCl. The eight diagnostic lines in the X-ray powder-diffraction pattern are (I-d[Å]-hkl): 100-14.59-001, 25-6.34-012, 11-6.02-111, 37-4.864-003, 13-4.766-112, 20-3.102-1 \\overline {2} \\overline {4} , 11-2.678-2 \\overline {3} \\overline {3} , 16-2.411-044. The crystal structure of batagayite was solved by direct methods and refined to R 1 = 0.069 for 3847 independent reflections with F o > 4σ(F o). It is based upon complex heteropolyhedral [M 8(PO4)4(PO3OH)3(H2O)9]2- layers parallel to the (001) plane. The layer can be considered as consisting of three sublayers, one A and two B. The central A layer has the composition [M 4(PO4)4(H2O)4]4- and consists of the zigzag chains of edge-sharing (MO6) octahedra running parallel to the a axis and linked into layers by sharing peripheral O atoms. The (PO4) tetrahedra are attached above and below the holes created by the linkage of zigzag octahedral chains. The B sublayer consists of chains of (ZnO4) and (PO3OH) tetrahedra. The interlayer space is occupied by the Ca2+ cations and H2O molecules. Batagayite is a secondary low-temperature mineral formed as a result of alteration of primary minerals such as native copper and fluorapatite. On the basis of its structural complexity calculated as 1058.257 bits/cell (taking into account contributions from H atoms), batagayite should be considered as a very complex mineral. The high complexity of batagayite is due to its high hydration state and the modular character of its structure, which contains both octahedral-tetrahedral layers and tetrahedral chains.

Nanofibrillated Cellulose-Assisted Synthesis of Fiber-Like ZnO-ZnFe2O4 Composites with Enhanced Visible-Light-Driven Photocatalytic Activity

NASA Astrophysics Data System (ADS)

Cai, Aijun; Guo, Aiying; Du, Liqiang; Chang, Yongfang; Wang, Xiuping

2018-05-01

In this article, fiber-like ZnO-ZnFe2O4 composites are obtained by using nanofibrillated cellulose as a biotemplate. The as-prepared composites exhibit strong absorbance in the visible-light region. The ZnO-ZnFe2O4 composites exhibit a similar bandgap (1.88 eV) compared with the ZnFe2O4 (1.85 eV). The ZnO-ZnFe2O4 composites can be easily collected by an external magnet, which contributes to improving the utilization efficiency of the photocatalysts. The photocatalytic activity of the ZnO-ZnFe2O4 catalysts was evaluated by photodegrading rhodamine B (RhB) under visible-light irradiation. Compared with ZnO and ZnFe2O4, the ZnO-ZnFe2O4 catalysts show higher photocatalytic activity due to the efficient electron-hole separation.

High-valent manganese–oxo valence tautomers and the influence of Lewis/Brönsted acids on C–H bond cleavage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baglia, Regina A.; Krest, Courtney M.; Yang, Tzuhsiung

The addition of Lewis or Brönsted acids (LA = Zn(OTf) 2, B(C 6F 5) 3, HBAr F, TFA) to the high-valent manganese–oxo complex Mn V(O)(TBP 8Cz) results in the stabilization of a valence tautomer Mn IV(O-LA)(TBP 8Cz •+). The Zn II and B(C 6F 5) 3 complexes were characterized by manganese K-edge X-ray absorption spectroscopy (XAS). The position of the edge energies and the intensities of the pre-edge (1s to 3d) peaks confirm that the Mn ion is in the +4 oxidation state. Fitting of the extended X-ray absorption fine structure (EXAFS) region reveals 4 N/O ligands at Mn–N avemore » = 1.89 Å and a fifth N/O ligand at 1.61 Å, corresponding to the terminal oxo ligand. This Mn–O bond length is elongated compared to the Mn V(O) starting material (Mn–O = 1.55 Å). The reactivity of Mn IV(O-LA)(TBP 8Cz •+) toward C–H substrates was examined, and it was found that H • abstraction from C–H bonds occurs in a 1:1 stoichiometry, giving a Mn IV complex and the dehydrogenated organic product. The rates of C–H cleavage are accelerated for the Mn IV(O-LA)(TBP 8Cz •+) valence tautomer as compared to the MnV(O) valence tautomer when LA = Zn II, B(C 6F 5) 3, and HBArF, whereas for LA = TFA, the C–H cleavage rate is slightly slower than when compared to MnV(O). A large, nonclassical kinetic isotope effect of k H/ k D = 25–27 was observed for LA = B(C 6F 5) 3 and HBAr F, indicating that H-atom transfer (HAT) is the rate-limiting step in the C–H cleavage reaction and implicating a potential tunneling mechanism for HAT. Furthermore, the reactivity of Mn IV(O-LA)(TBP 8Cz •+) toward C–H bonds depends on the strength of the Lewis acid. The HAT reactivity is compared with the analogous corrole complex Mn IV(O–H)(tpfc •+) recently reported.« less

High-valent manganese–oxo valence tautomers and the influence of Lewis/Brönsted acids on C–H bond cleavage

DOE PAGES

Baglia, Regina A.; Krest, Courtney M.; Yang, Tzuhsiung; ...

2016-09-30

The addition of Lewis or Brönsted acids (LA = Zn(OTf) 2, B(C 6F 5) 3, HBAr F, TFA) to the high-valent manganese–oxo complex Mn V(O)(TBP 8Cz) results in the stabilization of a valence tautomer Mn IV(O-LA)(TBP 8Cz •+). The Zn II and B(C 6F 5) 3 complexes were characterized by manganese K-edge X-ray absorption spectroscopy (XAS). The position of the edge energies and the intensities of the pre-edge (1s to 3d) peaks confirm that the Mn ion is in the +4 oxidation state. Fitting of the extended X-ray absorption fine structure (EXAFS) region reveals 4 N/O ligands at Mn–N avemore » = 1.89 Å and a fifth N/O ligand at 1.61 Å, corresponding to the terminal oxo ligand. This Mn–O bond length is elongated compared to the Mn V(O) starting material (Mn–O = 1.55 Å). The reactivity of Mn IV(O-LA)(TBP 8Cz •+) toward C–H substrates was examined, and it was found that H • abstraction from C–H bonds occurs in a 1:1 stoichiometry, giving a Mn IV complex and the dehydrogenated organic product. The rates of C–H cleavage are accelerated for the Mn IV(O-LA)(TBP 8Cz •+) valence tautomer as compared to the MnV(O) valence tautomer when LA = Zn II, B(C 6F 5) 3, and HBArF, whereas for LA = TFA, the C–H cleavage rate is slightly slower than when compared to MnV(O). A large, nonclassical kinetic isotope effect of k H/ k D = 25–27 was observed for LA = B(C 6F 5) 3 and HBAr F, indicating that H-atom transfer (HAT) is the rate-limiting step in the C–H cleavage reaction and implicating a potential tunneling mechanism for HAT. Furthermore, the reactivity of Mn IV(O-LA)(TBP 8Cz •+) toward C–H bonds depends on the strength of the Lewis acid. The HAT reactivity is compared with the analogous corrole complex Mn IV(O–H)(tpfc •+) recently reported.« less

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jun, E-mail: lijun_yt@163.com; Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072; Huang, Chuan-Xin

Graphical abstract: This work reports the Ba content on thin film transistor based on a novel BaZnSnO semiconductor using solution process. - Highlights: • No reports about BaZnSnO thin film using solution process. • BaZnSnO thin film transistor (TFT) was firstly fabricated. • BaZnSnO-TFT shows a acceptable performace. • Influence of Ba content on BaZnSnO-TFT. - Abstract: A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Bamore » is obtained, showing a saturation mobility of 1.94 cm{sup 2}/V s, a threshold voltage of 3.6 V, an on/off current ratio of 6.2 × 10{sup 6}, a subthreshold swing of 0.94 V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices.« less

Excitons and photoluminescence in ZnO and Zn0.99Mn0.01O nanocrystals

NASA Astrophysics Data System (ADS)

Gruzdev, N. B.; Sokolov, V. I.; Ermakov, A. E.; Uimin, M. A.; Mysik, A. A.; Pustovarov, V. A.

2010-08-01

The photoluminescence and photoluminescence excitation spectra for Zn1- x Mn x O nanocrystals are presented. After annealing of powders in air, the intensity of the bands attributable to manganese decreases noticeably. This suggests that the oxygen vacancies affect the Zhang-Rice-like states appearing due to strong d- p-hybridization, which is confirmed by an increase in the band gap of Zn1- x Mn x O for low x. The origin of the 2.9-eV peak and the shape of its excitation spectrum are discussed qualitatively. For Zn1- x Mn x O nanocrystals, the shape of the excitation spectrum is as unusual as the intense absorption in the range (2.2-3.0) eV.

Composition-microstructure-property relationships in dual phase bulk magnetoelectric composite

NASA Astrophysics Data System (ADS)

Islam, Rashed Adnan

The coexistence of coupled electrical and magnetic properties in the "magnetoelectric" material has led to the possibility of developing smarter and smaller electronic components. In order to make this possibility a reality, significant efforts are required to understand the science of magnetoelectric (ME) behavior and apply this understanding to develop higher sensitivity material. The primary aims of this thesis are to identify the role of composition, microstructural variables, composite geometry, texturing, post sintering heat treatment, and nanoscale assembly on ME coefficient. The overall objective is to synthesize, characterize and utilize a high ME coefficient composite. The desired range of ME coefficient in the sintered composite is more than 1.5 V/cm.Oe. At first, a piezoelectric composition in the system of Pb(Zr,Ti)O 3 - Pb[(Zn,Ni)1/3Nb2/3]O3 was designed and synthesized which has high energy density (d.g) parameter of 18456.2 x 10-15m2/N and high g constant of 83.1 V-m/N in order to use it as the matrix in piezoelectric---magnetostrictive composite. Secondly it was found that soft piezoelectric phase shows much better magnetoelectric response. The magnetoelectric coefficient for Pb(Zr 0.52Ti0.48)O3 - 15% Pb(Zn1/3Nb 2/3)O3 [PZT - 15 PZN] - 20% Ni0.8Zn 0.2Fe2O4 was found to be around 186 mV/cm.Oe. Thridly, soft magnetic phase with lower coercivity and higher magnetization was found to be suitable for high ME coefficient. Zinc doped Ni-ferrite has higher resistivity, permeability, magnetization and it was found that with increasing Zn concentration the ME coefficient increases exhibiting maxima near 30 at% Zn (138 mV/cm.Oe). Fourthly, if the connectivity was changed from (0-3) to (2-2) which is a bilayer geometry, improved piezoelectric (d33 ˜ 80 pC/N), ferroelectric (polarization = 60 muC/cm2), magnetization (25 emu/gm) and lower coercive field (2.8 Oe) were measured. The bilayer shows an enhancement of 67% increase in ME coefficient compared to bulk composite. Finally it was found that the electrical, magnetic and magnetoelectric properties of (1-x) Pb(Zr0.52Ti0.48)O3 - xNiFe 1.9Mn0.1O4 (PZT-NFM) composites were enhanced after post-sinter annealing and aging. The thermal treatment relaxed the strain in the matrix as observed by change in PZT lattice constant from (a = 3.87A, c = 4.07 A) to (a = 4.07A, c = 4.09 A). This signifies that strain relaxation helps to enhance the ME coefficient by ˜ 50%. A trilayer composite was synthesized using pressure assisted sintering with soft phase [0.9PZT - 0.1 PZN] having grain size larger than 1mum and soft ferromagnetic phase of composition Ni0.8Cu0.2Zn 0.2Fe2O4 [NCZF]. The composite showed a high ME coefficient of 412 and 494mV/cm.Oe after sintering and annealing respectively. Optimized ferrite to PZT thickness ratio was found to be 5.33, providing ME coefficient of 525mV/cm.Oe. The ME coefficient exhibited orientation dependence with respect to applied magnetic field. Multilayering the PZT layer increased the magnitude of ME coefficient to 782mV/cm.Oe. Piezoelectric grain texturing and nano-particulate assembly techniques were incorporated with the layered geometry. It was found that with moderate texturing, d33 and ME coefficient reached up to 325 pC/N and 878 mV/cm.Oe respectively. Nano-particulate core shell assembly shows the promise for achieving large ME coefficient in the sintered composites. A systematic relationship between composition, microstructure, geometry and properties is presented which will lead towards development of high performance magnetoelectric materials. Using the particulate type ME composite developed in thesis, a high sensitivity magnetic field sensor based on piezoelectric transformer principle was fabricated and characterized. This application demonstrates the advantages of ME composites for magnetic field sensing.

Zincovelesite-6N6S, Zn3(Fe3+,Mn3+,Al,Ti)8O15(OH), a new högbomite-supergroup mineral from Jacupica mountains, Republic of Macedonia

NASA Astrophysics Data System (ADS)

Chukanov, Nikita V.; Krzhizhanovskaya, Maria G.; Jančev, Simeon; Pekov, Igor V.; Varlamov, Dmitry A.; Göttlicher, Jörg; Rusakov, Vyacheslav S.; Polekhovsky, Yury S.; Chervonnyi, Alexandr D.; Ermolaeva, Vera N.

2018-02-01

A new mineral species zincovelesite-6N6S with the simplified formula Zn3(Fe3+,Mn3+,Al,Ti)8O15(OH) was discovered in the orogenetic zone related to the "Mixed Series" metamorphic complex near the Nežilovo village, Jacupica Mountains, Pelagonia mountain range, Republic of Macedonia. In oxide Zn-Fe-Mn ore, zincovelesite-6N6S forms lenticular aggregates up to 2 × 2 × 0.5 mm consisting of thin near-coplanar platelets up to 70 × 70 × 1 µm3 and associated with franklinite, gahnite, hetaerolite, zincochromite, ferricoronadite, baryte, As-rich fluorapatite, dolomite, Zn-bearing talc, almeidaite, hydroxycalcioroméite, zircon, quartz, and scheelite. In silicate-baryte zones of the metasomatic rock, uniaxial intergrowths of zincovelesite-6N6S with nežilovite are observed. The new mineral is opaque, black, with brownish-black streak. The lustre is strong submetallic to metallic. The micro-indentation hardness is 1118 kg/mm2 which corresponds to Mohs' hardness ca. 6½. Zincovelesite-6N6S is brittle, with uneven fracture. No cleavage or parting is observed. The density calculated from the empirical formula is 5.158 g/cm3. In reflected light zincovelesite-6N6S is light grey. The reflectance values [R max/R min, % (λ, nm)] are: 17.1/13.4 (470), 16.5/12.8 (546), 16.2/12.6 (589), 15.6/12.2 (650). The IR spectrum shows the presence of OH groups. According to the Mössbauer spectrum, all iron is trivalent. The Mn K-edge XANES spectroscopy shows that Mn is predominantly or completely trivalent. The average chemical composition is (wt%; electron microprobe, H2O determined by gas chromatography of ignition products): MgO 0.97, CuO 0.50, ZnO 30.80, Al2O3 8.17, Mn2O3 21.31, Fe2O3 29.44, TiO2 5.28, Sb2O5 3.74, H2O 1.1, total 101.31. The empirical formula based on 16 O atoms is H1.05Zn3.26Mg0.21Cu0.05Fe3+ 3.18Mn3+ 2.32Al1.38Ti0.57Sb0.20O16. Zincovelesite-6N6S is trigonal, probable space group P-3m1, a = 5.902(2) Å, c = 55.86(1) Å, V = 1684.8(9) Å3, Z = 6. The strongest lines of the powder X-ray diffraction pattern [d, Å (I, %) (hkl)] are: 2.952 (62) (110), 2.881 (61) (1.0.16), 2.515 (100) (204), 2.493 (88) (1.1.12), 2.451 (39) (1.0.20), 1.690 (19) (304, 2.1.16), 1.572 (19) (2.0.28), 1.475 (29) (221). Zincovelesite-6N6S is the first Fe3+-dominant member of the högbomite supergroup and, thus, can be considered as a parent species of a new mineral group. The rootname velesite is given for the discovery locality near the city of Veles.

[Distribution Characteristics, Sources and Pollution Assessment of Trace Elements in Surficial Sediments of the Coastal Wetlands, Northeastern Hainan Island].

PubMed

Zhang, Wei-kun; Gan, Hua-yang; Bi, Xiang-yang; Wang, Jia-sheng

2016-04-15

Totally 128 surficial sediments samples were collected from the coastal wetlands, northeastern Hainan Island and analyzed for their concentrations of 14 elements including Al2O3, Fe2O3, MnO, Cu, Ni, Sr, Zn, V, Pb, Cr, Zr, As, Cd and Hg, TOC and grain sizes. The mean concentrations of trace metals V, Cr, Ni, Cu, Zn, As, Pb, Cd and Hg were (40.13 +/- 32.65), (35.92 +/- 26.90), (13.03 +/- 11.46), (11.56 +/- 10.27)-, (48.75 +/- 27.00), (5.48 +/- 1.60), ( 18.70 +/- 8.66), (0.054 +/- 0.045 ), (0.050 +/- 0.050) microg x g(-1), respectively, which were much lower than those in Pearl River Estuary, Yangzi River Estuary, Bohai Bay, upper crust and average shale. The average concentrations of Sr and Zr were much higher, reaching up to (1253.60 +/- 1649.58) microg x g(-1) and (372.40 +/- 516.49) microg x g(-1), respectively. The spatial distribution patterns of Al2O3, Fe2O3, MnO, Cu, Ni, Zn, V, Pb, Cr, Cd and Hg concentrations were the same as each other except for those of As, Sr and Zr. Generally, relatively high concentrations of these elements only appeared in the Haikou Bay, Nandu estuary, Dongzhai Harbor, Qinglan Harbor and Xiaohai in study area. The factor analysis revealed that the trace elements Al2O3 Fe2O3, MnO, Cu, Ni, Zn, V, Pb, Cr and part of Hg were mainly originated from the rock material by natural weathering processes, while the Cd and a part of Hg were from the biological source controlled by TOC. As and part of MnO were influenced by anthropogenic source, especially by aquacultures. Zr and some MnO were derived from heavy minerals dominated by the coarse grain of sediments. In contrast to the ERL, ERM and the results of enrichment factors (EF) , the environment of study area was good in general and the degree of contamination by trace elements was low on the whole. However, there are still some places where anthropogenic input have caused serious enrichments of trace elements and the occasional adverse effect on benthic organism induced by Ni could probably occur in 22% areas of all the sampling stations.

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

Water-Lubricated Intercalation in V2 O5 ·nH2 O for High-Capacity and High-Rate Aqueous Rechargeable Zinc Batteries.

PubMed

Yan, Mengyu; He, Pan; Chen, Ying; Wang, Shanyu; Wei, Qiulong; Zhao, Kangning; Xu, Xu; An, Qinyou; Shuang, Yi; Shao, Yuyan; Mueller, Karl T; Mai, Liqiang; Liu, Jun; Yang, Jihui

2018-01-01

Low-cost, environment-friendly aqueous Zn batteries have great potential for large-scale energy storage, but the intercalation of zinc ions in the cathode materials is challenging and complex. Herein, the critical role of structural H 2 O on Zn 2+ intercalation into bilayer V 2 O 5 ·nH 2 O is demonstrated. The results suggest that the H 2 O-solvated Zn 2+ possesses largely reduced effective charge and thus reduced electrostatic interactions with the V 2 O 5 framework, effectively promoting its diffusion. Benefited from the "lubricating" effect, the aqueous Zn battery shows a specific energy of ≈144 Wh kg -1 at 0.3 A g -1 . Meanwhile, it can maintain an energy density of 90 Wh kg -1 at a high power density of 6.4 kW kg -1 (based on the cathode and 200% Zn anode), making it a promising candidate for high-performance, low-cost, safe, and environment-friendly energy-storage devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research on ZnO/Si heterojunction solar cells

NASA Astrophysics Data System (ADS)

Chen, Li; Chen, Xinliang; Liu, Yiming; Zhao, Ying; Zhang, Xiaodan

2017-06-01

We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO:B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications. We investigate the effects of thickness, buffer layer, ZnO:B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package. The energy conversion efficiency of the ZnO:B(n)/ZnO/c-Si(p) solar cell can achieve 17.16% ({V}{oc}: 675.8 mV, {J}{sc}: 30.24 mA/cm2, FF: 83.96%) via simulation. On a basis of optimized conditions in simulation, we carry out some experiments, which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells. The influences of growth temperature, thickness and diborane (B2H6) flow rates are also discussed. We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique. The obtained conversion efficiency reaches 2.82% ({V}{oc}: 294.4 mV, {J}{sc}: 26.108 mA/cm2, FF: 36.66%). Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

Effects of Bulky Substituents of Push-Pull Porphyrins on Photovoltaic Properties of Dye-Sensitized Solar Cells.

PubMed

Higashino, Tomohiro; Kawamoto, Kyosuke; Sugiura, Kenichi; Fujimori, Yamato; Tsuji, Yukihiro; Kurotobi, Kei; Ito, Seigo; Imahori, Hiroshi

2016-06-22

To evaluate the effects of substituent bulkiness around a porphyrin core on the photovoltaic properties of porphyrin-sensitized solar cells, long alkoxy groups were introduced at the meso-phenyl group (ZnPBAT-o-C8) and the anchoring group (ZnPBAT-o-C8Cn, n = 4, 8) of an asymmetrically substituted push-pull porphyrin with double electron-donating diarylamino groups and a single electron-withdrawing carboxyphenylethynyl anchoring group. The spectroscopic and electrochemical properties of ZnPBAT-o-C8 and ZnPBAT-o-C8Cn were found to be superior to those of a push-pull porphyrin reference (YD2-o-C8), demonstrating their excellent light-harvesting and redox properties for dye-sensitized solar cells. A power conversion efficiency (η) of the ZnPBAT-o-C8-sensitized solar cell (η = 9.1%) is higher than that of the YD2-o-C8-sensitized solar cell (η = 8.6%) using iodine-based electrolyte due to the enhanced light-harvesting ability of ZnPBAT-o-C8. In contrast, the solar cells based on ZnPBAT-o-C8Cn, possessing the additional alkoxy chains in the anchoring group, revealed the lower η values of 7.3% (n = 4) and 7.0% (n = 8). Although ZnPBAT-o-C8Cn exhibited higher resistance at the TiO2-dye-electrolyte interface by virtue of the extra alkoxy chains, the reduced amount of the porphyrins on TiO2 by excessive addition of coadsorbent chenodeoxycholic acid (CDCA) for mitigating the aggregation on TiO2 resulted in the low η values. Meanwhile, the ZnPBAT-o-C8-sensitized solar cell showed the lower η value of 8.1% than the YD2-o-C8-sensitized solar cell (η = 9.8%) using cobalt-based electrolyte. The smaller η value of the ZnPBAT-o-C8-sensitized solar cell may be attributed to the insufficient blocking effect of the bulky substituents of ZnPBAT-o-C8 under the cobalt-based electrolyte conditions. Overall, the alkoxy chain length and substitution position around the porphyrin core are important factors to affect the cell performance.

Solution-processed zinc oxide/polyethylenimine nanocomposites as tunable electron transport layers for highly efficient bulk heterojunction polymer solar cells.

PubMed

Chen, Hsiu-Cheng; Lin, Shu-Wei; Jiang, Jian-Ming; Su, Yu-Wei; Wei, Kung-Hwa

2015-03-25

In this study, we employed polyethylenimine-doped sol-gel-processed zinc oxide composites (ZnO:PEI) as efficient electron transport layers (ETL) for facilitating electron extraction in inverted polymer solar cells. Using ultraviolet photoelectron spectroscopy, synchrotron grazing-incidence small-angle X-ray scattering and transmission electron microscopy, we observed that ZnO:PEI composite films' energy bands could be tuned considerably by varying the content of PEI up to 7 wt %-the conduction band ranged from 4.32 to 4.0 eV-and the structural order of ZnO in the ZnO:PEI thin films would be enhanced to align perpendicular to the ITO electrode, particularly at 7 wt % PEI, facilitating electron transport vertically. We then prepared two types of bulk heterojunction systems-based on poly(3-hexylthiophene) (P3HT):phenyl-C61-butryric acid methyl ester (PC61BM) and benzo[1,2-b:4,5-b́]dithiophene-thiophene-2,1,3-benzooxadiazole (PBDTTBO):phenyl-C71-butryric acid methyl ester (PC71BM)-that incorporated the ZnO:PEI composite layers. When using a composite of ZnO:PEI (93:7, w/w) as the ETL, the power conversion efficiency (PCE) of the P3HT:PC61BM (1:1, w/w) device improved to 4.6% from a value of 3.7% for the corresponding device that incorporated pristine ZnO as the ETL-a relative increase of 24%. For the PBDTTBO:PC71BM (1:2, w/w) device featuring the same amount of PEI blended in the ETL, the PCE improved to 8.7% from a value of 7.3% for the corresponding device that featured pure ZnO as its ETL-a relative increase of 20%. Accordingly, ZnO:PEI composites can be effective ETLs within organic photovoltaics.

Mössbauer spectroscopy of ZnxMg1-x Fe2O4 (0 ≤ x ≤ 0.74) nanostructures crystallized from borate glasses

NASA Astrophysics Data System (ADS)

El Shabrawy, S.; Miglierini, M.; Schaaf, P.; Tzankov, D.; Georgieva, M.; Harizanova, R.; Rüssel, C.

2018-03-01

Glasses in the system 51.7 B2O3/9.3 K2O/1 P2O5/10.4 Fe2O3/(27.6 - y) MgO/y ZnO (with y = 0, 1, 2.5, 5, 7.5, 10, 13.8, and 20) were prepared by the conventional melt quenching method. The glass samples were thermally treated at 560 °C for 3 h in ambient conditions. Using 57Fe Mössbauer spectroscopy, the effect of the substitution of MgO by ZnO in the glass network and the effect on the precipitated crystallized phase was studied. The results showed that the ratio of Zn2+:Mg2+ in the precipitated crystals increases with the ZnO concentration in the glass. The isomer shift values indicated that iron occurs as Fe3+, which is distributed at the tetrahedral (A) and the octahedral [B] sites. Introducing ZnO leads to a relative increase of the Fe3+ concentration at the B sites at the expense of that occupying the A sites. This indicates the precipitation of ZnxMg1-x Fe2O4 nanoparticles, where Zn2+ ions favorably occupy the A sites. The average hyperfine field of the samples showed a strong dependence on the Zn concentration. At the highest Zn concentration of 13.8 and 20 mol%, the samples are paramagnetic, while for the smaller ones, the samples are superparamagnetic.

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.

PubMed

Kabra, Vinay; Aamir, Lubna; Malik, M M

2014-01-01

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effect of UV illumination on the I-V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Advanced thermopower wave in novel ZnO nanostructures/fuel composite.

PubMed

Lee, Kang Yeol; Hwang, Hayoung; Choi, Wonjoon

2014-09-10

Thermopower wave is a new concept of energy conversion from chemical to thermal to electrical energy, produced from the chemical reaction in well-designed hybrid structures between nanomaterials and combustible fuels. The enhancement and optimization of energy generation is essential to make it useful for future applications. In this study, we demonstrate that simple solution-based synthesized zinc oxide (ZnO) nanostructures, such as nanorods and nanoparticles are capable of generating high output voltage from thermopower waves. In particular, an astonishing improvement in the output voltage (up to 3 V; average 2.3 V) was achieved in a ZnO nanorods-based composite film with a solid fuel (collodion, 5% nitrocellulose), which generated an exothermic chemical reaction. Detailed analyses of thermopower waves in ZnO nanorods- and cube-like nanoparticles-based hybrid composites have been reported in which nanostructures, output voltage profile, wave propagation velocities, and surface temperature have been characterized. The average combustion velocities for a ZnO nanorods/fuel and a ZnO cube-like nanoparticles/fuel composites were 40.3 and 30.0 mm/s, while the average output voltages for these composites were 2.3 and 1.73 V. The high output voltage was attributed to the amplified temperature in intermixed composite of ZnO nanostructures and fuel due to the confined diffusive heat transfer in nanostructures. Moreover, the extended interfacial areas between ZnO nanorods and fuel induced large amplification in the dynamic change of the chemical potential, and it resulted in the enhanced output voltage. The differences of reaction velocity and the output voltage between ZnO nanorods- and ZnO cube-like nanoparticles-based composites were attributed to variations in electron mobility and grain boundary, as well as thermal conductivities of ZnO nanorods and particles. Understanding this astonishing increase and the variation of the output voltage and reaction velocity, precise ZnO nanostructures, will help in formulating specific strategies for obtaining enhanced energy generation from thermopower waves.

Detecting Liquefied Petroleum Gas (LPG) at Room Temperature Using ZnSnO3/ZnO Nanowire Piezo-Nanogenerator as Self-Powered Gas Sensor.

PubMed

Fu, Yongming; Nie, Yuxin; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

2015-05-20

High sensitivity, selectivity, and reliability have been achieved from ZnSnO3/ZnO nanowire (NW) piezo-nanogenerator (NG) as self-powered gas sensor (SPGS) for detecting liquefied petroleum gas (LPG) at room temperature (RT). After being exposed to 8000 ppm LPG, the output piezo-voltage of ZnSnO3/ZnO NW SPGS under compressive deformation is 0.089 V, much smaller than that in air ambience (0.533 V). The sensitivity of the SPGS against 8000 ppm LPG is up to 83.23, and the low limit of detection is 600 ppm. The SPGS has lower sensitivity against H2S, H2, ethanol, methanol and saturated water vapor than LPG, indicating good selectivity for detecting LPG. After two months, the decline of the sensing performance is less than 6%. Such piezo-LPG sensing at RT can be ascribed to the new piezo-surface coupling effect of ZnSnO3/ZnO nanocomposites. The practical application of the device driven by human motion has also been simply demonstrated. This work provides a novel approach to fabricate RT-LPG sensors and promotes the development of self-powered sensing system.

Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

PubMed

Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

2014-02-15

Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

NASA Astrophysics Data System (ADS)

Minato, Hiroya; Fujiwara, Kohei; Tsukazaki, Atsushi

2018-05-01

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

Hydroxy double salts loaded with bioactive ions: Synthesis, intercalation mechanisms, and functional performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaassis, Abdessamad Y.A.; Xu, Si-Min; Guan, Shanyue

The intercalation of the anions of diclofenac (Dic), naproxen (Nap), and valproic acid (Val) into three hydroxy double salts (HDSs) has been explored in this work. Experiments were performed with [Co{sub 1.2}Zn{sub 3.8}(OH){sub 8}](NO{sub 3}){sub 2}·2H{sub 2}O (CoZn-NO{sub 3}), [Ni{sub 2}Zn{sub 3}(OH){sub 8}](NO{sub 3}){sub 2}·2H{sub 2}O (NiZn-NO{sub 3}) and [Zn{sub 5}(OH){sub 8}](NO{sub 3}){sub 2}·2H{sub 2}O (Zn-NO{sub 3}). It proved possible to intercalate diclofenac and naproxen into all three HDSs. In contrast, Val could be intercalated into CoZn-NO{sub 3} but when it was reacted with Zn-NO{sub 3} the HDS structure was destroyed, and the product comprised ZnO. Successful intercalation was verifiedmore » by X-ray diffraction, IR spectroscopy, and elemental microanalysis. Molecular dynamics simulations showed the Dic and Nap ions to arrange themselves in an “X” shape in the interlayer space, forming a bilayer. Val was found to adopt a position with its aliphatic groups parallel to the HDS layer, again in a bilayer. In situ time resolved X-ray diffraction experiments revealed that intercalation of Dic and Nap into CoZn-NO{sub 3} and Zn-NO{sub 3} is mechanistically complex, with a number of intermediate phases observed. In contrast, the intercalation of all three guests into NiZn-NO{sub 3} and of Val into CoZn-NO{sub 3} are simple one step reactions proceeding directly from the starting material to the product. The HDS-drug composites were found to have sustained release profiles. - Graphical abstract: Seven new drug intercalates of hydroxy double salts (HDSs) have been prepared and characterised. The intercalation mechanisms have been explored, and the drug release properties of the HDS/drug composites quantified. Display Omitted.« less

The Role of Metal Oxides in Nanothermite Reactions: Evidence of Condensed Phase Initiation

DTIC Science & Technology

2010-01-01

ignition on the gaseous oxidizer release from the metal oxides CuO, Fe2O3, and ZnO .[14] However, there is uncertainty as to whether oxidizer release to the...and how it differs from some other systems. In our previous work, we studied the nanothermite reaction of Al/CuO, Al/Fe2O3, and Al/ ZnO .[9] For...Jomard, Oxygen Diffusion in Bi2O3-doped ZnO , Materials Research-Ibero-American Journal of Materials, 11 (2008) 221-225. [20] T. Ivetic, M.V. Nikolic

Synthesis, characterization and crystal structure of a 1D thiocyanato bridged [Cu(en)2Zn(NCS)4]ṡH2O. Comparison of the three structures with the same [Cu(en)2Zn(NCS)4] unit - different in structural terms

NASA Astrophysics Data System (ADS)

Wrzeszcz, Grzegorz; Muzioł, Tadeusz M.; Tereba, Natalia

2015-03-01

In this paper we report the synthesis method and the structure of a one-dimensional thiocyanato bridged heterometallic compound, [Cu(en)2Zn(NCS)4]ṡH2O (1). Moreover, we compare the structure of (1) with the previously described structures of [Cu(en)2Zn(NCS)4]ṡ0.5H2O (2) and [Cu(en)2Zn(NCS)4]ṡCH3CN (3) Pryma et al. (2003) [7]. The compound (1) has been characterized by thermal decomposition, IR, Vis and EPR spectra, and magnetic studies. Structure has been determined by X-ray analysis. Described coordination polymer crystallizes in the orthorhombic Cmcm space group with a = 12.414(2), b = 10.3276(14), c = 14.967(2) Å, α = β = γ = 90°, V = 1918.8(5) Å3 and Z = 4. Each distorted tetrahedral zinc(II) centre (with N-bonded NCS-) links two tetragonally distorted octahedral copper(II) centres by two end-to-end thiocyanato bridges and vice versa forming a zigzag type of CuZn chain. The structures of (1), (2) and (3) differ in crystallographic system, space group and/or CuZn chain type as well as in details. Variable temperature magnetic susceptibility measurements show very weak antiferromagnetic interactions between the paramagnetic copper(II) ions for compound (1).

Zincobotryogen, ZnFe3+(SO4)2(OH)ṡ7H2O: validation as a mineral species and new data

NASA Astrophysics Data System (ADS)

Yang, Zhuming; Giester, Gerald; Mao, Qian; Ma, Yuguang; Zhang, Di; Li, He

2017-06-01

Zincobotryogen occurs in the oxidation zone of the Xitieshan lead-zinc deposit, Qinghai, China. The mineral is associated with jarosite, copiapite, zincocopiapite, and quartz. The mineral forms prismatic crystals, 0.05 to 2 mm in size. It is optically positive (2Vcalc = 54.1°), with Z ‖ b and X ∧ c = 10°. The elongation is negative. The refractive indices are n α = 1.542(5), n β = 1.551(5), n γ = 1.587(5). The pleochroism scheme is X = colorless, Y = light yellow, Z = yellow. Microprobe analysis gave (in wt%): SO3 = 38.04, Al2O3 = 0.04, Fe2O3 = 18.46, ZnO = 13.75, MgO = 1.52, MnO = 1.23, H2O = 31.06 (by calculation), Total = 104.10. The simplified formula is (Zn,Mg)Fe3+(SO4)2(OH)ṡ7H2O. The mineral is monoclinic, P121/ n1, a = 10.504(2), b = 17.801(4), c = 7.1263(14) Å, and β = 100.08(3)°, V = 1311.9(5) Å3, Z = 4. The strongest lines in the powder X-ray diffraction pattern d(I)( hkl) are: 8.92 (100)(110), 6.32 (77)(-101), 5.56 (23)(021), 4.08 (22)(-221),3.21 (31)(231), 3.03 (34)(032), 2.77 (22)(042). The crystal structure was refined using 2816 unique reflections to R1( F) = 0.0355 and wR2( F 2) = 0.0651. The refined formula is (Zn0.84Mg0.16)Fe3+(SO4)2(OH)ṡ7H2O. The atomic arrangement is characterized by chains with composition [Fe3+(SO4)2(OH)(H2O)]2- and 7 Å repeat distance running parallel to the c-axis. The chain links to a [ MO(H2O)5] octahedron ( M = Zn, Mg) and an unshared H2O molecule, and forms a larger chain building module with composition [ M 2+Fe3+(SO4)2(OH)(H2O)6(H2O)]. The inter-chain module linkage involves only hydrogen bonding.

Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions.

PubMed

Wang, C D; Jha, S K; Chen, Z H; Ng, T W; Liu, Y K; Yuen, M F; Lu, Z Z; Kwok, S Y; Zapien, J A; Bello, I; Lee, C S; Zhang, W J

2012-06-01

Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at +/- 4 V and a small reverse leakage current approximately 1 microA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory.

Indium doped ZnO nano-powders prepared by RF thermal plasma treatment of In2O3 and ZnO

NASA Astrophysics Data System (ADS)

Lee, Mi-Yeon; Song, Min-Kyung; Seo, Jun-Ho; Kim, Min-Ho

2015-06-01

Indium doped ZnO nano-powders were synthesized by the RF thermal plasma treatment of In2O3 and ZnO. For this purpose, micron-sized ZnO powder was mixed with In2O3 powder at the In/Zn ratios of 0.0, 1.2, and 2.4 at. % by ball milling for 1 h, after which the mixtures were injected into RF thermal plasma generated at the plate power level of ˜140 kV A. As observed from the field emission scanning electron microscopy (FE-SEM) images of the RF plasma-treated powders, hexagonal prism-shaped nano-crystals were mainly obtained along with multi-pod type nano-particles, where the number of multi-pods decreased with increasing In/Zn ratios. In addition, the X-ray diffraction (XRD) data for the as-treated nano-powders showed the diffraction peaks for the In2O3 present in the precursor mixture to disappear, while the crystalline peaks for the single phase of ZnO structure shifted toward lower Bragg angles. In the UV-vis absorption spectra of the as-treated powders, redshifts were also observed with increases of the In/Zn ratios. Together with the FE-SEM images and the XRD data, the redshifts were indicative of the doping process of ZnO with indium, which took place during the RF thermal plasma treatment of In2O3 and ZnO.

A pH-sensitive micelle composed of heparin, phospholipids, and histidine as the carrier of photosensitizers: Application to enhance photodynamic therapy of cancer.

PubMed

Debele, Tilahun Ayane; Mekuria, Shewaye Lakew; Tsai, Hsieh-Chih

2017-05-01

In this study, we describe the synthesis of a stable, pH-sensitive micelle composed of heparin, 1, 2-distearoyl-sn-glycerol-3-phosphoethanolamine, and l-histidine (HDH) through 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDC)/N-hydroxysuccinimide (NHS) chemistry. 1 H-Nuclear magnetic resonance (NMR) and Fourier transform infrared spectroscopy (FTIR) analyses confirmed the formation of HDH copolymers and dynamic light scattering (DLS) measurements indicated a particle size of 111.57±12.36nm and zeta potential of -59.8±5.2mV for the nanoparticles. The drug-loading and encapsulation efficiency of the micelles were 14.52±1.2% and 65.47±1.87%, respectively. Drug release studies showed approximately 91% zinc phthalocyanine (ZnPc) release from micelles in acidic conditions (pH 5.0) in comparison with 63% in physiological conditions (pH 7.4) after 96h of incubation. Singlet oxygen ( 1 O 2 ) detection revealed that the micelles prevented ZnPc aggregation and enhanced 1 O 2 generation. Cellular uptake of ZnPc-loaded micelles (ZnPc-HDH) was observed using confocal microscopy. Phototoxicity experiments in HeLa cells showed that ZnPc-loaded micelles had higher toxicity than that shown by the same concentration of free ZnPc. Hence, pH-sensitive HDH micelles are a promising carrier for hydrophobic ZnPc and improving PDT efficacy. Copyright © 2017 Elsevier B.V. All rights reserved.

Bifunctional Zn(II)Ln(III) dinuclear complexes combining field induced SMM behavior and luminescence: enhanced NIR lanthanide emission by 9-anthracene carboxylate bridging ligands.

PubMed

Palacios, María A; Titos-Padilla, Silvia; Ruiz, José; Herrera, Juan Manuel; Pope, Simon J A; Brechin, Euan K; Colacio, Enrique

2014-02-03

There were new dinuclear Zn(II)-Ln(III) complexes of general formulas [Zn(μ-L)(μ-OAc)Ln(NO3)2] (Ln(III) = Tb (1), Dy (2), Er (3), and Yb (4)), [Zn(μ-L)(μ-NO3)Er(NO3)2] (5), [Zn(H2O)(μ-L)Nd(NO3)3]·2CH3OH (6), [Zn(μ-L)(μ-9-An)Ln(NO3)2]·2CH3CN (Ln(III) = Tb (7), Dy (8), Er (9), Yb(10)), [Zn(μ-L)(μ-9-An)Yb(9-An)(NO3)3]·3CH3CN (11), [Zn(μ-L)(μ-9-An)Nd(9-An)(NO3)3]·2CH3CN·3H2O (12), and [Zn(μ-L)(μ-9-An)Nd(CH3OH)2(NO3)]ClO4·2CH3OH (13) prepared from the reaction of the compartmental ligand N,N',N″-trimethyl-N,N″-bis(2-hydroxy-3-methoxy-5-methylbenzyl)diethylenetriamine (H2L), with ZnX2·nH2O (X = NO3(-) or OAc(-)) salts, Ln(NO3)3·nH2O, and, in some instances, 9-anthracenecarboxylate anion (9-An). In all these complexes, the Zn(II) ions invariably occupy the internal N3O2 site whereas the Ln(III) ions show preference for the O4 external site, giving rise to a Zn(μ-diphenoxo)Ln bridging fragment. Depending on the Zn(II) salt and solvent used in the reaction, a third bridge can connect the Zn(II) and Ln(III) metal ions, giving rise to triple-bridged diphenoxoacetate in complexes 1-4, diphenoxonitrate in complex 5, and diphenoxo(9-anthracenecarboxylate) in complexes 8-13. Dy(III) and Er(III) complexes 2, 8 and 3, 5, respectively, exhibit field induced single molecule magnet (SMM) behavior, with Ueff values ranging from 11.7 (3) to 41(2) K. Additionally, the solid-state photophysical properties of these complexes are presented showing that ligand L(2-) is able to sensitize Tb(III)- and Dy(III)-based luminescence in the visible region through an energy transfer process (antenna effect). The efficiency of this process is much lower when NIR emitters such as Er(III), Nd(III), and Yb(III) are considered. When the luminophore 9-anthracene carboxylate is incorporated into these complexes, the NIR luminescence is enhanced which proves the efficiency of this bridging ligand to act as antenna group. Complexes 2, 3, 5, and 8 can be considered as dual materials as they combine SMM behavior and luminescent properties.

Accelerated effects of nano-ZnO on phosphorus removal by Chlorella vulgaris: Formation of zinc phosphate crystallites.

PubMed

Xiao, Huaixian; Liu, Na; Tian, Ke; Liu, Shixiang; Ge, Fei

2018-09-01

Nanoparticles have been reported to induce toxicity to aquatic organisms, however, their potential impacts on phosphorus removal from wastewater by algae are unclear. In this study, the effects of nanoparticle ZnO (nano-ZnO) on phosphate (PO 4 3- ) removal by a green alga Chlorella vulgaris were investigated. We found that PO 4 3- removal efficiency was accelerated with high concentrations of nano-ZnO (0.04-0.15mM) but reduced with low concentrations of nano-ZnO (0.005-0.04mM) compared to the control (without nano-ZnO), suggesting that PO 4 3- removal efficiency by C. vulgaris was related to nano-ZnO concentrations. Moreover, we observed changes of nano-ZnO morphology and detected element P on the surface of nano-ZnO by using transmission electronic microscopy (TEM) combined with energy dispersive X-ray spectroscopy (EDX), indicating that PO 4 3- was interacted with nano-ZnO or the dissolved Zn 2+ from nano-ZnO. Furthermore, we confirmed this interaction induced the formation of Zn 3 (PO 4 ) 2 crystallites sedimentation by employing X-ray diffraction analysis (XRD) and X-ray photoelectron spectroscopy (XPS), which finally accelerates the removal of PO 4 3- . Copyright © 2018 Elsevier B.V. All rights reserved.

Fabrication of selective chemical sensor with ternary ZnO/SnO2/Yb2O3 nanoparticles.

PubMed

Rahman, Mohammed M; Alam, M M; Asiri, Abdullah M; Islam, M A

2017-08-01

Construction of highly efficient toxic chemical sensors is the key approach for the determination of carcinogenic chemicals in the environment and ecosystem. We report here, an efficient acetone chemical sensor based on the analytical performances such as sensitivity, lower-detection limit, reproducibility, and good linearity. The proposed acetone-detecting electrode was introduced by the implementation of ZnO/SnO 2 /Yb 2 O 3 nanoparticles (NPs) as a successful electron mediator with glassy carbon electrode (GCE) assembly. The prepared NPs of ZnO/SnO 2 /Yb 2 O 3 were well crystalline-doped nanomaterial and produced by implementation of hydrothermal procedure at low temperature. The conventional methods such as Fourier-transform infrared spectroscopy (FTIR), ultraviolet visible spectroscopy (UV/vis), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and powder x-ray diffraction (XRD) were utilized for characterization of prepared NPs in terms of morphological, elemental, optical and structural properties. The large linear dynamic range (LDR) of 0.34nmolL -1 to 3.4mmolL -1 with lower detection limit (S/N=3) of 0.05±0.002nmolL -1 and a higher sensitivity of 17.09µAmmolL -1 cm -2 were exhibited by lab-made fabricated sensor based on ZnO/SnO 2 /Yb 2 O 3 NPs for selective acetone detection. In shortly, the ZnO/SnO 2 /Yb 2 O 3 NPs are utilized as an excellent electron mediator with Nafion/GCE assembly in a chemical sensor for acetone detection even at the very low concentration. Therefore, the chemical sensor is fabricated with ZnO/SnO 2 /Yb 2 O 3 NPs may be a promising highly sensitive sensor by reliable I-V detection method for the effective detection of hazardous and carcinogenic chemicals in medical as well as health-care fields. Copyright © 2017 Elsevier B.V. All rights reserved.

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.

PubMed

Li, Huifeng; Huang, Yunhua; Zhang, Qi; Qiao, Yi; Gu, Yousong; Liu, Jing; Zhang, Yue

2011-02-01

In this article, Co/Mn-codoped ZnO nanowires (NWs) were successfully synthesized on a silicon substrate by the thermal evaporation method with Au catalyst. The X-ray diffraction pattern indicated that the Co/Mn-codoped ZnO NWs are a hexagonal wurtzite structure without a second phase, and energy dispersive X-ray spectroscopy revealed that the Co and Mn ions were introduced into the ZnO NWs with the content of ∼0.8 at% and ∼1.2 at%, respectively. Photoluminescence spectra and Raman spectra showed that the Co/Mn were doped into the NWs and resulted in the shift of the near-band-edge emission. Moreover, the novel Raman peak at 519.3 cm(-1) has suggested that the two kinds of cations via doping could affect the local polarizability. Compared with the undoped ZnO NW, the electrical measurement showed that the Co/Mn-codoping enhanced the conductivity by an order of magnitude due to the presence of Co, Mn cations. The electron mobility and carrier concentration of a fabricated field effect transistor (FET) device is 679 cm2 V(-1) s(-1) and 2×10(18) cm(-3), respectively. Furthermore, the M-H curve demonstrated that the Co/Mn-codoped ZnO NWs have obvious ferromagnetic characteristics at room temperature. Our study enhances the understanding of the novel performances of transition-metal codoped ZnO NWs and also provides a potential way to fabricate optoelectronic devices.

Two new three-dimensional zinc phosphites templated by piperazine: [H2pip][Zn3(HPO3)4(H2O)2] and K[H2pip]0.5[Zn3(HPO3)4

NASA Astrophysics Data System (ADS)

Zhang, Xiao; Wang, Guo-Ming; Wang, Zong-Hua; Wang, Ying-Xia; Lin, Jian-Hua

2014-01-01

Two three-dimensional open-framework zinc phosphites with the same organically templated, [H2pip][Zn3(HPO3)4(H2O)2] (1) and K[H2pip]0.5[Zn3(HPO3)4] (2) (pip = piperazine), have been solvothermally synthesized and structurally characterized by IR, elemental analysis, thermogravimetric analysis, powder and single-crystal X-ray diffractions. Compound 1 consists of ZnO4 tetrahedra, [HPO3] pseudopyramids and [ZnO4(H2O)2] octahedra, which are linked through their vertexes to generate three-dimensional architecture with intersecting 8-membered channels along the [1 0 0], [0 0 1] and [1 0 1] directions. Compound 2 is constructed from strictly alternating ZnO4 tetrahedra and [HPO3] pseudopyramids, and exhibits (3,4)-connected inorganic framework with 8-, and 12-membered channels, in which the K+ and diprotonated H2pip2+ extra-framework cations reside, respectively. The coexistence of inorganic K+ and organic piperazine mixed templates in the structure is unique and, to the best of our knowledge, firstly observed in metal-phosphite materials. In addition, the participation of left-handed and right-handed helical chains in construction of the puckered 4.82 sheet structure in 2 is also noteworthy.

A novel flexible nanogenerator made of ZnO nanoparticles and multiwall carbon nanotube

NASA Astrophysics Data System (ADS)

Sun, Hui; Tian, He; Yang, Yi; Xie, Dan; Zhang, Yu-Chi; Liu, Xuan; Ma, Shuo; Zhao, Hai-Ming; Ren, Tian-Ling

2013-06-01

In this paper, a novel flexible nanogenerator (FNG) made of zinc-oxide (ZnO) nanoparticles (NPs) and multiwall-carbon nanotubes (MW-CNTs) is presented. In this structure, ZnO NPs and MW-CNTs are mixed with polydimethylsiloxane (PDMS) uniformly to form an entire flexible nanogenerator. Serial tests illustrate that the output voltage and power density are as high as 7.5 V and 18.75 μW per cycle, respectively. Furthermore, by foot stamp on the FNG, a peak voltage as high as 30 V can be generated. Comparing to the control samples, it is also proved that adding MW-CNTs into the matrix could significantly enhance the output voltage from 0.8 to 7.5 V. In summary, our work indicates that the realization of flexible nanogenerators made of ZnO NPs and MW-CNTs is technologically feasible, which may bring out some important and interesting applications in energy harvesting.In this paper, a novel flexible nanogenerator (FNG) made of zinc-oxide (ZnO) nanoparticles (NPs) and multiwall-carbon nanotubes (MW-CNTs) is presented. In this structure, ZnO NPs and MW-CNTs are mixed with polydimethylsiloxane (PDMS) uniformly to form an entire flexible nanogenerator. Serial tests illustrate that the output voltage and power density are as high as 7.5 V and 18.75 μW per cycle, respectively. Furthermore, by foot stamp on the FNG, a peak voltage as high as 30 V can be generated. Comparing to the control samples, it is also proved that adding MW-CNTs into the matrix could significantly enhance the output voltage from 0.8 to 7.5 V. In summary, our work indicates that the realization of flexible nanogenerators made of ZnO NPs and MW-CNTs is technologically feasible, which may bring out some important and interesting applications in energy harvesting. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr00866e

Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors.

PubMed

Huang, Heh-Chang; Hsieh, Tsung-Eong

2010-07-23

ZnO particles with an average size of about 5 nm were prepared via a sol-gel chemical route and the silane coupling agent, (3-glycidyloxypropyl)-trimethoxysilane (GPTS), was adopted to enhance the dispersion of the ZnO nanoparticles in ethyl glycol (EG) solution. A ZnO surface potential as high as 66 mV was observed and a sedimentation test showed that the ZnO precursor solution remains transparent for six months of storage, elucidating the success of surface modification on ZnO nanoparticles. The ZnO thin films were then prepared by spin coating the precursor solution on a Si wafer and annealing treatments at temperatures up to 500 degrees C were performed for subsequent preparation of ZnO thin film transistors (TFTs). Microstructure characterization revealed that the coalescence of ZnO nanoparticles occurs at temperatures as low as 200 degrees C to result in a highly uniform, nearly pore-free layer. However, annealing at higher temperatures was required to remove organic residues in the ZnO layer for satisfactory device performance. The 500 degrees C-annealed ZnO TFT sample exhibited the best electrical properties with on/off ratio = 10(5), threshold voltage = 17.1 V and mobility (micro) = 0.104 cm(2) V(-1) s(-1).

Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam

NASA Astrophysics Data System (ADS)

Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu, Shigefusa F.

2018-04-01

The polarity dependence of the radiation hardness of single-crystalline ZnO bulk crystals is studied by irradiating the Zn-polar and O-polar c-planes with an 8 MeV proton beam up to the fluence of 4.2 × 1016 p/cm2. To analyze the hardness, radiation-induced defects were evaluated using positron annihilation (PA) analysis, and the recovery by post-annealing was examined using continuous-wave photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. It was suggested by the PA and PL analyses that the major defects in both polarities were VZnVO divacancies. While the PA data did not show the clear dependence on the polarity, the PL and TRPL results showed that the Zn-polar c-plane had a little higher radiation tolerance than that of the O-polar c-plane, which was consistent with the result that the increase in the electrical resistance by proton beam irradiation was smaller for the former one. Considering these results in total, the polarity dependence is considered to be not so large, but the Zn-polar c-plane has a little higher tolerance than that of the O-polar one.

A simple quinolone Schiff-base containing CHEF based fluorescence 'turn-on' chemosensor for distinguishing Zn2+ and Hg2+ with high sensitivity, selectivity and reversibility.

PubMed

Dong, Yuwei; Fan, Ruiqing; Chen, Wei; Wang, Ping; Yang, Yulin

2017-05-23

A new simple 'dual' chemosensor MQA ((E)-2-methoxy-N-((quinolin-2-yl)methylene)aniline) for distinguishing Zn 2+ and Hg 2+ has been designed, synthesized and characterized. The sensor showed excellent selectivity and sensitivity with a fluorescence enhancement to Zn 2+ /Hg 2+ over other commonly coexisting cations (such as Na + , Mg 2+ , Al 3+ , K + , Mn 2+ , Fe 2+ , Fe 3+ , Co 2+ , Ni 2+ , Cu 2+ , Ga 3+ , Cd 2+ , In 3+ and Pb 2+ ) in DMSO-H 2 O solution (1/99 v/v), which was reversible with the addition of ethylenediaminetetraacetic acid (EDTA). The detection limit for Zn 2+ /Hg 2+ by MQA both reached the 10 -8 M level. The 1 : 1 ligand-to-metal coordination patterns of the MQA-Zn2+ and MQA-Hg2+ were calculated through a Job's plot and ESI-MS spectra, and were further confirmed by X-ray crystal structures of complexes MQA-Zn2+ and MQA-Hg2+. This chemosensor can recognize similar metal ions by coherently utilizing intramolecular charge transfer (ICT) and different electronic affinities of various metal ions. DFT calculations have revealed that the energy gap between the HOMO and LUMO of MQA has decreased upon coordination with Zn(ii)/Hg(ii).

Reduced graphene Oxide/ZnO nanostructures based rectifier diode

NASA Astrophysics Data System (ADS)

Bhatnagar, Sameeksha; Kumar, Ravi; Sharma, Monika; Kuanr, Bijoy K.

2017-05-01

We report on the fabrication and characterization of graphene oxide and reduced graphene oxide/ZnO nanostructures on ITO-coated glass substrates for the rectification properties of a heterojunction device. The composites of GO/ZnO and rGO/ZnO were synthesized by the modified Hummers method followed by annealing process in N2 and H2 ambient atmosphere at various temperatures. The structural and compositional analysis of the composite material have been investigated using X-ray diffraction spectroscopy and Raman spectroscopy. The optical properties of the composite films were studied by UV-visible spectroscopy and the band-gap was obtained by Tauc's plot. The band-gap reduces to 2.4 eV for the composite film as compared to ZnO film 3.26 eV. The I-V characteristics of ZnO thin films and rGO/ZnO films were done for different light conditions viz dark, ambient light and UV-illumination. It has been observed that the threshold voltage decreases when the sample was placed in UV-illumination. A direct variation in photo-response is revealed with the bias voltage as well as UV illumination. The fabricated device could be used as an Ultraviolet Photo-detector.

Structural and optical properties of DC magnetron sputtered ZnO films on glass substrate and their modification by Ag ions implantation

NASA Astrophysics Data System (ADS)

Ahmad, R.; Afzal, Naveed; Amjad, U.; Jabbar, S.; Hussain, T.; Hussnain, A.

2017-07-01

This work is focused on investigating the effects of deposition time and Ag ions implantation on structural and optical properties of ZnO film. The ZnO film was prepared on glass substrate by pulsed DC magnetron sputtering of pure Zn target in reactive oxygen environment for 2 h, 3 h, 4 h and 5 h respectively. X-ray diffraction results revealed polycrystalline ZnO film whose crystallinity was improved with increase of the deposition time. The morphological features indicated agglomeration of smaller grains into larger ones by increasing the deposition time. The UV-vis spectroscopy analysis depicted a small decrease in the band gap of ZnO from 3.36 eV to 3.27 eV with increase of deposition time. The Ag ions implantation in ZnO films deposited for 5 h on glass was carried out by using Pelletron Accelerator at different ions fluences ranging from 1  ×  1011 ions cm-2 to 2  ×  1012 ions cm-2. XRD patterns of Ag ions implanted ZnO did not show significant change in crystallite size by increasing ions fluence from 1  ×  1011 ions cm-2 to 5  ×  1011 ions cm-2. However, with further increase of the ions fluence, the crystallite size was decreased. The band gap of Ag ions implanted ZnO indicated anomalous variations with increase of the ions fluence.

Eu-doped ZnO nanoparticles: Sonochemical synthesis, characterization, and sonocatalytic application.

PubMed

Khataee, Alireza; Karimi, Atefeh; Zarei, Mahmoud; Joo, Sang Woo

2015-03-30

Undoped and europium (III)-doped ZnO nanoparticles were prepared by a sonochemical method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) analysis. The crystalline sizes of undoped and 3% Eu-doped ZnO were found to be 16.04 and 8.22nm, respectively. The particle size of Eu-doped ZnO nanoparticles was much smaller than that of pure ZnO. The synthesized nanocatalysts were used for the sonocatalytic degradation of Acid Red 17. Among the Eu-doped ZnO catalysts, 3% Eu-doped ZnO nanoparticles showed the highest sonocatalytic activity. The effects of various parameters such as catalyst loading, initial dye concentration, pH, ultrasonic power, the effect of oxidizing agents, and the presence of anions were investigated. The produced intermediates of the sonocatalytic process were monitored by GC-Mass (GC-MS) spectrometry. Copyright © 2015 Elsevier B.V. All rights reserved.

Cuprian fraipontite and sauconite from the Defiance-Silver Bill mines, Gleeson, Arizona.

USGS Publications Warehouse

Foord, E.E.; Taggart, J.E.; Conklin, N.M.

1983-01-01

XRD studies have shown the fine-grained, light blue-green mineral previously identified as turquoise or chrysocolla to be the rare species fraipontite + or - admixed sauconite. Composite microprobe and XRF analyses gave SiO2 24.8, Al2O3 17.3, CaO 0.34, CuO 5.2, ZnO 40.95, H2O (ign. loss, 900oC) 12.8, = 101.39, yielding the formula (Zn1.84Al0.77Cu0.24box 0.13- Ca0.02)3.00(Si1.51Al0.49)2.00O5(OH)4. Semiquantitative emission spectrographic analysis showed Fe 0.007, Mg 0.01, Ca 0.07, Si 10, Al major, Na 0.015, Zn major, Cu 5%; Mn 15, B 150, Be 7, Ni 50, Pb 15, Sc 15, Ga 70 and Ag 1 ppm. It has a 5.331(8), b 9.23(1), c 7.275(6) A, beta 104.15o; H. 3.5-4; Dcalc 3.44, Dobs. 3.08- 3.10; mean refr. ind. approx 1.61. Much of the fraipontite is admixed with sauconite, which may be forming from the fraipontite. XRF analysis of this material gave SiO2 32.8, Al2O3 10.9, MgO < 0.1, CaO 1.51, Na2O < 0.2, K2O < 0.02, TiO2 < 0.02, P2O5 < 0.02, MnO < 0.02, CuO 4.65, ZnO 39.9, ign. loss 13.9, = 103.7.-G.W.R.

Effect of Cu-Dopant on the Structural, Magnetic and Electrical Properties of ZnO

NASA Astrophysics Data System (ADS)

Aryanto, D.; Kurniawan, C.; Subhan, A.; Sudiro, T.; Sebayang, P.; Ginting, M.; Siregar, S. M. K.; Nasruddin, M. N.

2017-05-01

Zn1- x Cu x O (x = 0, 2, 3, and 4 at.%) was synthesized by using solid-state reaction technique. The ZnO and CuO powders were mixed and then milled by using high-speed shaker mill. The influence of Cu dopants on the structure, magnetic, and electrical properties was investigated by using XRD, VSM, and I-V and C-V measurements. The XRD analysis showed that the Zn1- x Cu x O had hexagonal wurtzite polycrystalline. The diffraction intensity decreased and the peak position shifted directly to a higher 2θ angle with increasing the dopant concentration. Furthermore, the lattice parameters decreased when the ZnO was doped with x = 0.04, which indicated that the crystal structure changed. The increase of Cu dopants was believed to affect the magnetic and electrical properties of ZnO.

UV Light-Driven Photodegradation of Methylene Blue by Using Mn0.5Zn0.5Fe2O4/SiO2 Nanocomposites

NASA Astrophysics Data System (ADS)

Indrayana, I. P. T.; Julian, T.; Suharyadi, E.

2018-04-01

The photodegradation activity of nanocomposites for 20 ppm methylene blue solution has been investigated in this work. Nanocomposites Mn0.5Zn0.5Fe2O4/SiO2 have been synthesized using coprecipitation method. The X-ray diffraction (XRD) pattern confirmed the formation of three phases in sample Mn0.5Zn0.5Fe2O4/SiO2 i.e., Mn0.5Zn0.5Fe2O4, Zn(OH)2, and SiO2. The appearance of SiO2 phase showed that the encapsulation process has been carried out. The calculated particles size of Mn0.5Zn0.5Fe2O4/SiO2 is greater than Mn0.5Zn0.5Fe2O4. Bonding analysis via vibrational spectra for Mn0.5Zn0.5Fe2O4/SiO2 confirmed the formation of bonds Me-O-Si stretching (2854.65 cm-1) and Si-O-Si asymmetric stretching (1026.13 cm-1). The optical gap energy of Mn0.5Zn0.5Fe2O4/SiO2 was smaller (2.70 eV) than Mn0.5Zn0.5Fe2O4 (3.04 eV) due to smaller lattice dislocation and microstrain that affect their electronic structure. The Mn0.5Zn0.5Fe2O4/SiO2 showed high photodegradation ability due to smaller optical gap energy and the appearance of SiO2 ligand that can easily attract dye molecules. The Mn0.5Zn0.5Fe2O4/SiO2 also showed high degradation activity even without UV light radiation. The result showed that photodegradation reaction doesn’t follow pseudo-first order kinetics.

Improved electron injection in all-solution-processed n-type organic field-effect transistors with an inkjet-printed ZnO electron injection layer

NASA Astrophysics Data System (ADS)

Roh, Jeongkyun; Kim, Hyeok; Park, Myeongjin; Kwak, Jeonghun; Lee, Changhee

2017-10-01

Interface engineering for the improved injection properties of all-solution-processed n-type organic field-effect transistors (OFETs) arising from the use of an inkjet-printed ZnO electron injection layer were demonstrated. The characteristics of ZnO in terms of electron injection and transport were investigated, and then we employed ZnO as the electron injection layer via inkjet-printing during the fabrication of all-solution-processed, n-type OFETs. With the inkjet-printed ZnO electron injection layer, the devices exhibited approximately five-fold increased mobility (0.0058 cm2/V s to 0.030 cm2/V s), more than two-fold increased charge concentration (2.76 × 1011 cm-2 to 6.86 × 1011 cm-2), and two orders of magnitude reduced device resistance (120 MΩ cm to 3 MΩ cm). Moreover, n-type polymer form smoother film with ZnO implying denser packing of polymer, which results in higher mobility.

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

NASA Astrophysics Data System (ADS)

Zolnai, Z.; Toporkov, M.; Volk, J.; Demchenko, D. O.; Okur, S.; Szabó, Z.; Özgür, Ü.; Morkoç, H.; Avrutin, V.; Kótai, E.

2015-02-01

The atomic composition with less than 1-2 atom% uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He+ analyzing ion beam and non-Rutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

Two-dimensional vanadium-doped ZnO nanosheet-based flexible direct current nanogenerator.

PubMed

Gupta, Manoj Kumar; Lee, Ju-Hyuck; Lee, Keun Young; Kim, Sang-Woo

2013-10-22

Here, we report the synthesis of lead-free single-crystalline two-dimensional (2D) vanadium(V)-doped ZnO nanosheets (NSs) and their application for high-performance flexible direct current (DC) power piezoelectric nanogenerators (NGs). The vertically aligned ZnO nanorods (NRs) converted to NS networks by V doping. Piezoresponse force microscopy studies reveal that vertical V-doped ZnO NS exhibit typical ferroelectricity with clear phase loops, butterfly, and well-defined hysteresis loops with a piezoelectric charge coefficient of up to 4 pm/V, even in 2D nanostructures. From pristine ZnO NR-based NGs, alternating current (AC)-type output current was observed, while from V-doped ZnO NS-based NGs, a DC-type output current density of up to 1.0 μAcm(-2) was surprisingly obtained under the same vertical compressive force. The growth mechanism, ferroelectric behavior, charge inverted phenomena, and high piezoelectric output performance observed from the V-doped ZnO NS are discussed in terms of the formation of an ionic layer of [V(OH)4(-)], permanent electric dipole, and the doping-induced resistive behavior of ZnO NS.

Optical and Magnetic Resonance Studies of Na-Diffused ZnO Bulk Single Crystals

NASA Astrophysics Data System (ADS)

Glaser, E. R.; Garces, N. Y.; Parmar, N. S.; Lynn, K. G.

2013-03-01

Photoluminescence (PL) and optically-detected magnetic resonance (ODMR) at 24 GHz were performed on bulk ZnO crystals after diffusion of Na impurities that were explored as an alternate doping source for p-type conductivity. PL at 2K revealed strong bandedge excitonic recombination at 3.361 eV and a broad ``orange'' PL band at 2.17 eV with FWHM of ~0.5 eV. This ``orange'' emission is very similar to that reported previously[1] from thermoluminescence measurements of intentionally Na-doped bulk ZnO and, thus, strongly suggests the incorporation and activation of the Na-diffused impurities. ODMR performed on this ``orange'' PL revealed two signals. The first was a sharp feature with g-value of ~1.96 and is a well-known ``fingerprint'' of shallow donors in ZnO. The second signal consisted of a pair of lines with an intensity ratio of ~3:1 and with g-tensors (g∥,g⊥ ~2.008-2.029) very similar to ESR signals attributed previously[2] to holes bound to Na impurities located at the axial and non-axial Zn host lattice sites in Na-doped ZnO. Thus, the ``orange'' PL can be tentatively assigned to radiative recombination between residual shallow donors and deep Na-related hole traps.

Ni(II)/Zn(II)-triazolate clusters based MOFs constructed from a V-shaped dicarboxylate ligand: Magnetic properties and phosphate sensing

NASA Astrophysics Data System (ADS)

Chen, Yong-Qiang; Tian, Yuan; Li, Na; Liu, Sui-Jun

2018-06-01

Two isomorphous metal-organic frameworks (MOFs) {[M2(μ3-OH)(trz)(sdba)(H2O)]·3H2O}∞ (M = Ni for 1, Zn for 2, Htrz = 1,2,4-triazole, H2sdba = 4,4‧-sulfonyldibenzoate) were obtained under the same reaction condition. Both of complexes present a three dimensional 8-c framework with whc1 topology based on M4-(μ3-OH) units. Moreover, the magnetic properties of 1 and anion sensing of 2 were investigated. The magnetic study show that the domain antiferromagnetic interactions exist in 1. However, complex 2 can be considered as a promising chemical sensor for detecting PO43barby means of fluorescence enhancement among various anions in aqueous solutions.

Nevadaite, (Cu2+, Al, V3+)6 [Al8 (PO4)8 F8] (OH 2 (H2O)22, a new phosphate mineral species from the Gold Quarry mine, Carlin, Eureka County, Nevada: description and crystal structure

USGS Publications Warehouse

Cooper, M.A.; Hawthorne, F.C.; Roberts, Andrew C.; Foord, E.E.; Erd, Richard C.; Evans, H.T.; Jensen, M.C.

2004-01-01

Nevadaite, (Cu2+, ???, Al, V3+)6 (PO4)8 F8 (OH)2 (H2O)22, is a new supergene mineral species from the Gold Quarry mine, near Carlin, Eureka County, Nevada, U.S.A. Nevadaite forms radiating clusters to 1 mm of prismatic crystals, locally covering surfaces more that 2 cm across; individual crystals are elongate on [001] with a length:width ratio of > 10:1 and a maximum diameter of ???30 ??m. It also occurs as spherules and druses associated with colorless to purple-black fluellite, colorless wavellite, strengitevariscite, acicular maroon-to-red hewettite, and rare anatase, kazakhstanite, tinticite, leucophosphite, torbernite and tyuyamunite. Nevadaite is pale green to turquoise blue with a pale powder-blue streak and a vitreous luster; it does not fluoresce under ultra-violet light. It has no cleavage, a Mohs hardness of ???3, is brittle with a conchoidal fracture, and has measured and calculated densities of 2.54 and 2.55 g/cm3, respectively. Nevadaite is biaxial negative, with ?? 1.540, ?? 1.548, ?? 1.553, 2V(obs.) = 76??, 2V(calc.) = 76??, pleochroic with X pale greenish blue, Y very pale greenish blue, Z blue, and with absorption Z ??? X > Y and orientation X = c, Y = a, Z = b. Nevadaite is orthorhombic, space group P21mn, a 12.123(2), b 18.999(2), c 4.961(1) A?? , V 1142.8(2) A??3, Z = 1, a:b:c = 0.6391:1:0.2611. The strongest seven lines in the X-ray powder-diffraction pattern [d in A??(I)(hkl)] are: 6.077(10)(200), 5.618(9)(130), 9.535(8)(020), 2.983(6)(241), 3.430(4)(041), 2.661(4)(061 , and 1.844(4)(352). A chemical analysis with an electron microprobe gave P2O5 32.54, Al2O3 27.07, V2O3 4.24, Fe2O3 0.07, CuO 9.24, ZnO 0.11, F 9.22, H2O (calc.) 23.48, OH ??? F -3.88, sum 102.09 wt.%; the valence states of V and Fe, and the amount of H2O, were determined by crystal-structure analysis. The resulting empirical formula on the basis of 63.65 anions (including 21.65 H2O pfu) is (CU2+2.00 Zn0.02 V3+0.98 Fe3+0.01 Al1.15)??4.16 Al8 P7.90 O32 [F8.37 (OH 1.63]??10 (H2O 21.65. The crystal structure of nevadaite was solved by direct methods and refined to an R index of 4.0% based on 1307 observed reflections collected on a four-circle diffractometer with MoK?? X-radiation. The structure consists of ordered layers of vertex-sharing octahedra and tetrahedra alternating with layers of disordered vertex-sharing and face-sharing octahedra in the b direction. [Al??5] chains of octahedra are decorated by (PO4) tetrahedra that share vertices with octahedra adjacent in the chain. These chains link in the c direction by sharing vertices between octahedra and tetrahedra to form an ordered layer of the form [Al8(PO4)8F8(H2O 8]. In the disordered layer, octahedra containing positionally disordered Cu2+, V3+, Al and ??? (vacancy) share trans faces to form columns that link by sharing octahedron vertices to form ribbons extending in the c direction; the resulting layer has the form (Cu2+2???2V3+, Al ??6 (H2O)12 (OH)2 (H2O)x,, X ??? 2. The layers link in the b direction by sharing vertices between octahedra and tetrahedra. Although decorated chains topologically equivalent to that in nevadaite are common in many oxysalt minerals, its chain is geometrically distinct from those topologically equivalent chains. The M-M linkage along the [M??5] chains in most minerals take place through trans vertices of the octahedra, with one example of linkage through cis vertices; in nevadaite, the M-M linkage involves both trans and cis vertices, as does the chain in slavi??kite. In most of these decorated chains, alternate tetrahedra along the chain occur either in a trans or a cis arrangement. In nevadaite and slavi??kite, the tetrahedra are arranged in both trans and cis arrangements; the arrangements in these two minerals are geometrically distinct, however.

A Direct Ultrasound Irradiation Method Synthesis of Monodisperse ZnO Microspheres for Varistors Ceramics Application

NASA Astrophysics Data System (ADS)

Chen, Tao; Wang, Mao-Hua; Zhang, Han-Ping; Liu, Jin-Ran; Yao, Da-Chuan

2016-08-01

Monodisperse and uniform ZnO microspheres were synthesized via an ultrasound irradiation method. The microstructure and morphology of the as-prepared sample were characterized by x-ray powder diffraction, Fourier transformation infrared spectra and scanning electron microscopy. The results indicate that the size of ZnO microspheres was strongly affected by the Zn(NO3)2·6H2O. As the amount of the precursor increased, the diameters of the ZnO microspheres can be turned from ˜500 nm to ˜2 μm. The electrical properties of the varistors ceramics prepared from the as-obtained ZnO powders were investigated. The results show that the varistors ceramics made from ZnO with a size of ˜500 nm and sintered in air at 1150°C for 2 h possess a density of 5.50 g/cm3 corresponding to 95.1% of the theoretical density, with breakdown voltage of 280.9 V/mm and nonlinear coefficient of ˜61.3.

Electroluminescence of ZnO-based semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Novodvorskii, O. A.; Lotin, A. A.; Panchenko, Vladislav Ya; Parshina, L. S.; Khaidukov, E. V.; Zuev, D. A.; Khramova, O. D.

2011-01-01

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm-2, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs.

Enhanced Photocatalytic Activity of Two-Pot-Synthesized BiFeO3-ZnFe2O4 Heterojunction Nanocomposite

NASA Astrophysics Data System (ADS)

Ghasemi, A.; Hasheminiasari, M.; Masoudpanah, S. M.; Safizade, B.

2018-04-01

BiFeO3-ZnFe2O4 heterojunction nanocomposites have been produced by a chemical synthesis method using one- and two-pot approaches. X-ray diffraction patterns of as-calcined samples indicated formation of pure zinc ferrite (ZnFe2O4) and bismuth ferrite (BiFeO3) phases, each retaining its crystal structure. Diffuse reflectance spectrometry was applied to calculate the optical bandgap of the photocatalysts, revealing values in the range from 2.03 eV to 2.17 eV, respectively. The maximum photodegradation of methylene blue of about 97% was achieved using two-pot-synthesized photocatalyst after 120 min of visible-light irradiation due to the higher probability of charge separation of photogenerated electron-hole pairs in the heterojunction structure. Photoluminescence spectra showed lower emission intensity of two-pot-synthesized photocatalyst, due to its lower recombination rate originating from greater charge separation.

A flexible and transparent graphene/ZnO nanorod hybrid structure fabricated by exfoliating a graphite substrate.

PubMed

Nam, Gwang-Hee; Baek, Seong-Ho; Cho, Chang-Hee; Park, Il-Kyu

2014-10-21

We demonstrate the fabrication of a graphene/ZnO nanorod (NR) hybrid structure by mechanical exfoliation of ZnO NRs grown on a graphite substrate. We confirmed the existence of graphene sheets on the hybrid structure by analyzing the Raman spectra and current-voltage (I-V) characteristics. The Raman spectra of the exfoliated graphene/ZnO NR hybrid structure show G and 2D band peaks that are shifted to lower wavenumbers, indicating that the exfoliated graphene layer exists under a significant amount of strain. The I-V characteristics of the graphene/ZnO NR hybrid structure show current flow through the graphene layer, while no current flow is observed on the ZnO NR/polydimethylsiloxane (PDMS) composite without graphene, thereby indicating that the few-layer graphene was successfully transferred onto the hybrid structure. A piezoelectric nanogenerator is demonstrated by using the fabricated graphene/ZnO NR hybrid structure. The nanogenerator exhibits stable output voltage up to 3.04 V with alternating current output characteristics.

Epitaxy of Zn{sub 2}TiO{sub 4} (1 1 1) thin films on GaN (0 0 1)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsiao, Chu-Yun; Wu, Jhih-Cheng; Shih, Chuan-Feng, E-mail: cfshih@mail.ncku.edu.tw

2013-03-15

Highlights: ► High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by sputtering. ► Oxygen atmosphere and post heat-treatment annealing effectively enhanced epitaxy. ► The epitaxial Zn{sub 2}TiO{sub 4} modifies the dielectric properties of ceramic oxide. - Abstract: High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn{sub 2}TiO{sub 4} films. Lattice image at the Zn{sub 2}TiO{sub 4} (1 1 1)/GaN (0 0 1) interface was obtained by high-resolutionmore » transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (111){sub Zn{sub 2TiO{sub 4}}}||(001){sub GaN}, (202{sup ¯}){sub Zn{sub 2TiO{sub 4}}}||(110){sub GaN},and[21{sup ¯}1{sup ¯}]{sub Zn{sub 2TiO{sub 4}}}||[01{sup ¯}10]{sub GaN}. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn{sub 2}TiO{sub 4} based capacitor were ∼18.9, 8.38 × 10{sup 11} eV{sup −1} cm{sup −2}, and 1.1 V, respectively, indicating the potential applications of the Zn{sub 2}TiO{sub 4} thin film to the GaN-based metal-oxide-semiconductor capacitor.« less

Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature

NASA Astrophysics Data System (ADS)

Ullah, M. B.; Avrutin, V.; Nakagawara, T.; Hafiz, S.; Altuntaş, I.; Özgür, Ü.; Morkoç, H.

2017-05-01

We studied the effect of the substrate temperature, in the range from 450 °C to 500 °C, on the required Zn to (Be + Mg) flux ratio for plasma-assisted molecular beam epitaxy growth of O-polar BexMgyZn1-x-yO on (0001)-GaN/sapphire templates. Achievement of single-crystalline BexMgyZn1-x-yO with improved optical and structural qualities required relatively high substrate temperatures, which necessitated the Zn to (Be + Mg) flux ratio to be increased from 3.9 at 450 °C to 8.3 at 500 °C. This resulted in a reduction of Mg incorporation from 25% to 15% for a fixed Be content of ˜3%. With increasing Zn to (Be + Mg) ratio, 15 K photoluminescence energy for the dominant emission remained unchanged at around 3.75 eV and 3.55 eV for the samples grown at 475 °C and 500 °C, respectively. These findings readily suggest a kinetic limitation of Mg and Be incorporation into wurtzite BexMgyZn1-x-yO lattice, resulting in the formation of second phase due mainly to the enhanced surface mobility of Mg adatoms and, therefore, an increase in the probability of the formation of Mg-rich clusters. An increase in the in-plane lattice parameter, deduced from the Reflection High Energy Electron Diffraction, at the onset of the phase segregation suggests the formation of the wurtzite phase MgO rich alloy(s).

Lead-free piezoelectrics: V3+ to V5+ ion conversion promoting the performances of V-doped Zinc Oxide.

PubMed

Laurenti, M; Castellino, M; Perrone, D; Asvarov, A; Canavese, G; Chiolerio, A

2017-02-06

Vanadium doped ZnO (VZO) thin films were grown by RF magnetron sputtering, starting from a ZnO:V ceramic target. The crystal structure, chemical composition, electric and piezoelectric properties of the films were investigated either on the as-grown thin films or after a post-deposition rapid thermal annealing (RTA) treatment performed at 600 °C for different lengths of time (1 and 5 min) in an oxygen atmosphere. Substitutional doping of Zn 2+ with V 3+ and V 5+ ions strongly deteriorated the hexagonal wurtzite ZnO structure of the as-grown thin films due to lattice distortion. The resulting slight amorphization led to a poor piezoelectric response and higher resistivity. After the RTA treatment, strong c-axis oriented VZO thin films were obtained, together with a partial conversion of the starting V 3+ ions into V 5+ . The improvement of the crystal structure and the stronger polarity of both V 3+ - O and V 5+ - O chemical bonds, together with the corresponding easier rotation under the application of an external electric field, positively affected the piezoelectric response and increased conductivity. This was confirmed by closed-loop butterfly piezoelectric curves, by a maximum d 33 piezoelectric coefficient of 85 pm·V -1 , and also by ferroelectric switching domains with a well-defined polarization hysteresis curve, featuring a residual polarization of 12.5 μC∙cm -2 .

Effect of Inner Electrode on Reliability of (Zn,Mg)TiO3-Based Multilayer Ceramic Capacitor

NASA Astrophysics Data System (ADS)

Lee, Wen‑His; Su, Chi‑Yi; Lee, Ying Chieh; Yang, Jackey; Yang, Tong; PinLin, Shih

2006-07-01

In this study, different proportions of silver-palladium alloy acting as the inner electrode were adopted to a (Zn,Mg)TiO3-based multilayer ceramic capacitor (MLCC) sintered at 925 °C for 2 h to evaluate the effect of the inner electrode on reliability. The main results show that the lifetime is inversely proportional to Ag content in the Pd/Ag inner electrode. Ag+1 diffusion into the (Zn,Mg)TiO3-based MLCC during cofiring at 925 °C for 2 h and Ag+1 migration at 140 °C against 200 V are both responsible for the short lifetime of the (Zn,Mg)TiO3-based MLCC, particularly the latter factor. A (Zn,Mg)TiO3-based MLCC with high Ag content in the inner electrode Ag/Pd=99/01 exhibits the shortest lifetime (13 h), and the effect of Ag+1 migration is markedly enhanced when the activation energy of the (Zn,Mg)TiO3 dielectric is greatly lowered due to the excessive formation of oxygen vacancies and the semiconducting Zn2TiO4 phase when Ag+ substitutes for Zn+2 during co-firing.

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE PAGES

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha; ...

2017-02-10

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Activation like behaviour on the temperature dependence of the carrier density in In2O3-ZnO films

NASA Astrophysics Data System (ADS)

K, Makise; B, Shinozaki; T, Asano; K, Yano; H, Nakamura

2012-12-01

We study the effect of annealing in high vacuum on the transport properties for In2O3-ZnO films. We prepared indium zinc oxide films by the DC-magnetron sputtering method using an In2O3-ZnO target (89.3 wt % In2O3 and 10.7 wt % ZnO). The annealing temperature is from 373 to 773K. From the XRD analysis, we find that all as deposited films are amorphous. In addition we find that amorphous films are crystallized by annealing at a temperature above 773 K over 2 hours. The temperature dependence of resistivity ρ of all amorphous films shows metallic behaviour. On the other hand, ρ(T) of poly In2O3-ZnO films shows semi-conducting behaviour. We carry out a detailed analysis of the temperature dependence of Hall mobility. The activation energy Ed has been obtained from the slope of the carrier concentration Ne vs. the inverse temperature plot at high temperatures. We found that the Ed takes values between 0.43 and 0.19 meV. Meanwhile, temperature dependence of Ne for poly-In2O3-ZnO films did not show activation-like behaviour. This behaviour is thought to be causally related to impurity conduction band.

X-ray photoelectron spectroscopy investigations of band offsets in Ga0.02Zn0.98O/ZnO heterojunction for UV photodetectors

NASA Astrophysics Data System (ADS)

Singh, Karmvir; Rawal, Ishpal; Punia, Rajesh; Dhar, Rakesh

2017-10-01

Here, we report the valence and conduction band offset measurements in pure ZnO and the Ga0.02Zn0.98O/ZnO heterojunction by X-Ray photoelectron spectroscopy studies for UV photodetector applications. For detailed investigations on the band offsets and UV photodetection behavior of Ga0.02Zn0.98O/ZnO heterostructures, thin films of pristine ZnO, Ga-doped ZnO (Ga0.02Zn0.98O), and heterostructures of Ga-doped ZnO with ZnO (Ga0.02Zn0.98O/ZnO) were deposited using a pulsed laser deposition technique. The deposited thin films were characterized by X-ray diffraction, atomic force microscopy, and UV-Vis spectroscopy. X-ray photoelectron spectroscopy studies were carried out on all the thin films for the investigation of valence and conduction band offsets. The valence band was found to be shifted by 0.28 eV, while the conduction band has a shifting of -0.272 eV in the Ga0.02Zn0.98O/ZnO heterojunction as compared to pristine ZnO thin films. All the three samples were analyzed for photoconduction behavior under UVA light of the intensity of 3.3 mW/cm2, and it was observed that the photoresponse of pristine ZnO (19.75%) was found to increase with 2 wt. % doping of Ga (22.62%) and heterostructured thin films (29.10%). The mechanism of UV photodetection in the deposited samples has been discussed in detail, and the interaction of chemisorbed oxygen on the ZnO surface with holes generated by UV light exposure has been the observed mechanism for the change in electrical conductivity responsible for UV photoresponse on the present deposited ZnO films.

Improved conversion efficiency of dye sensitized solar cell using Zn doped TiO2-ZrO2 nanocomposite

NASA Astrophysics Data System (ADS)

Tomar, Laxmi J.; Bhatt, Piyush J.; Desai, Rahul K.; Chakrabarty, B. S.; Panchal, C. J.

2016-05-01

TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites were prepared by hydrothermal method for dye sensitized solar cell (DSSC) application. The structural and optical properties were investigated by X -ray diffraction (XRD) and UV-Visible spectroscopy respectively. XRD results revealed the formation of material in nano size. The average crystallite size is 22.32 nm, 17.41 nm and 6.31 nm for TiO2, TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites respectively. The optical bandgap varies from 2.04 eV to 3.75 eV. Dye sensitized solar cells were fabricated using the prepared material. Pomegranate juice was used as a sensitizer and graphite coated conducting glass plate was used as counter electrode. The I - V characteristics were recorded to measure photo response of DSSC. Photovoltaic parameter like open circuit voltage, power conversion efficiency, and fill factor were evaluated for fabricated solar cell. The power conversion efficiency of DSSC fabricated with TiO2, TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites were found 0.71%, 1.97% and 4.58% respectively.

A new mineral species ferricoronadite, Pb[Mn6 4+(Fe3+, Mn3+)2]O16: mineralogical characterization, crystal chemistry and physical properties

NASA Astrophysics Data System (ADS)

Chukanov, Nikita V.; Aksenov, Sergey M.; Jančev, Simeon; Pekov, Igor V.; Göttlicher, Jörg; Polekhovsky, Yury S.; Rusakov, Vyacheslav S.; Nelyubina, Yuliya V.; Van, Konstantin V.

2016-07-01

A new mineral ferricoronadite with the simplified formula Pb(Mn6 4+Fe2 3+)O16 was discovered in the orogenetic zone related to the "Mixed Series" metamorphic complex near the Nežilovo village, Pelagonian massif, Republic of Macedonia. Associated minerals are franklinite, gahnite, hetaerolite, roméite, almeidaite, Mn-analogue of plumboferrite, zincohögbomite analogue with Fe3+ > Al, zincochromite, Zn-bearing talc, Zn-bearing muscovite, baryte, quartz and zircon. Ferricoronadite is a late hydrothermal mineral forming veinlets up to 8 mm thick in granular aggregate predominantly composed by zinc-dominant spinels. The new mineral is opaque, black, with brownish black streak. The luster is strong submetallic to metallic. The micro-indentation hardness is 819 kg/mm2. Distinct cleavage is observed on (100). Ferricoronadite is brittle, with uneven fracture. The density calculated from the empirical formula is 5.538 g/cm3. In reflected light, ferricoronadite is light gray. The reflectance values [ R max/ R min, % ( λ, nm)] are: 28.7/27.8 (470), 27.6/26.6 (546), 27.2/26.1 (589), 26.5/25.5 (650). The IR spectrum shows the absence of H2O and OH groups. According to the Mössbauer spectrum, all iron is trivalent. The Mn K-edge XANES spectroscopy shows that Mn is predominantly tetravalent, with subordinate Mn3+. The chemical composition is (wt%; electron microprobe, Mn apportioned between MnO2 and Mn2O3 based on the charge-balance requirement): BaO 5.16, PbO 24.50, ZnO 0.33, Al2O3 0.50, Mn2O3 9.90, Fe2O3 11.45, TiO2 4.19, MnO2 44.81, total 100.84. The empirical formula based on 8 cations Mn + Fe + Ti + Al + Zn pfu is Pb1.03Ba0.32(Mn 4.85 4+ Fe 1.35 3+ Mn 1.18 3+ Ti0.49Al0.09Zn0.04)Σ8.00O16. The crystal structure was determined using single-crystal X-ray diffraction data. The new mineral is tetragonal, space group I4/ m, a = 9.9043(7), c = 2.8986(9) Å, V = 284.34(9) Å3, Z = 1. In ferricoronadite, double chains of edge-sharing (Mn, Fe, Ti)-centered octahedra are connected via common vertices to form a pseudo-framework with tunnels containing large cations Pb and Ba. The strongest lines of the powder X-ray diffraction pattern [ d, Å ( I, %) ( hkl)] are: 3.497 (33) (220), 3.128 (100) (-130, 130), 2.424 (27) (-121, 121), 2.214 (23) (240, -240), 2.178 (17) (031), 1.850 (15) (141, -141), 1.651 (16) (060), 1.554 (18) (-251, 251). Ferricoronadite is named as an analogue of coronadite Pb(Mn6 4+Mn2 3+)O16 with the major charge-compensating octahedral cation Fe3+ instead of Mn3+.

Ag-doping on ZnO support mediated by bio-analytes rich in ascorbic acid for photocatalytic degradation of dipyrone drug.

PubMed

Chelli, Venkatanarasimha Rao; Golder, Animes Kumar

2018-05-28

The analytes such as ascorbic acid (AA) present in Sechium edule were extracted (294 mg AA kg -1 fruit) in an aqueous media for its potential application for Ag-doping onto wurtzite ZnO. The bandgap of ZnO was decreased to 2.85 eV at the optimal Ag-loading of 1.18% (w/w) against 3.13 eV for the control catalyst without using the analytes and, the commercial AA only could reduce the bandgap to 2.91 eV. The saturation photo-electrochemical current density (46.68 mA cm -2 ) at E anode  ≥ 0.31 V vs. Ag/AgCl was almost double than pristine ZnO under visible light illumination (λ mean  = 525 nm, 18 K lux) and, the current density was insignificant in the dark. The doped catalyst exhibited the maximum 79.5% degradation (71% COD removal) of an anti-analgesic drug, dipyrone (100 μg L -1 dipyrone, catalyst 100 mg L -1 ) resulted from the formation of O 2 •- radical (g-factor of 2.002-2.008) and paramagnetic oxygen vacancies (g-factor of 2.020) and, no effect of dye-sensitization was noted. The highest quantum yield was found to be 34.7%. The catalyst loss was 6% after the fourth cycle and the dipyrone degradation was reduced to 70.8%. Copyright © 2018 Elsevier Ltd. All rights reserved.

Composite tin and zinc oxide nanocrystalline particles for enhanced charge separation in sensitized degradation of dyes.

PubMed

Bandara, J; Tennakone, K; Jayatilaka, P P B

2002-10-01

Composite ZnO/SnO2 catalyst has been studied for the sensitized degradation of dyes e.g. Eosin Y (2', 4', 5', 7'-tetrabromofluorescein disodium salt) in relation to efficient charge separation properties of the catalyst. Improved photocatalytic activity was observed in the case of ZnO/SnO2 composite catalyst compared to the catalytic activity of ZnO, SnO2 or TiO2 powder. The suppression of charge recombination in the composite ZnO/SnO2 catalyst led to higher catalytic activity for the degradation of Eosin Y. Degradation of Eosin follows concomitant formation of CO2 and formation of CO2 followed a pseudo-first-order rate. Photoelectrochemical cells constructed using SnO2, ZnO, ZnO/SnO2 sensitized with Eosin Y showed V(oc) of 175, 306, 512 mV/cm2 and I(sc) of 50, 70, 200 microA/cm2 respectively. A higher irreversible degradation of Eosin Y and higher V(oc) observed on composite ZnO/SnO2 than ZnO and SnO2 separately can be considered as a proof of enhanced charge separation of ZnO/SnO2 catalyst. Eosin Y showed a higher emission decreases on ZnO/SnO2 composite than on individual ZnO, SnO2 or TiO2 indicating dominance of the charge injection process. Photoinjected electrons are tunneled from ZnO to SnO2 particles accumulating injected electrons in the conduction bands allowing wider separation of excited carriers.

Electroluminescence of ZnO-based semiconductor heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya

2011-01-31

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

Cu2O-based solar cells using oxide semiconductors

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0.025)2O3 thin film with a thickness of approximately 60 nm. In addition, a Voc of 0.96 V and an η of 5.4% were obtained in a MgF2/AZO/n-AGMZO/p-Cu2O:Na heterojunction solar cell.

Zn2GeO4 nanowires as efficient electron injection material for electroluminescent devices.

PubMed

Wang, Jiangxin; Yan, Chaoyi; Magdassi, Shlomo; Lee, Pooi See

2013-08-14

Pure phase Zn2GeO4 nanowires (NWs) were grown by the chemical vapor transport method on p-GaN: Mg/Al2O3 substrate. The as-grown Zn2GeO4 NWs exhibited n-type characteristic due to native defects and formed a p-n heterojunction with the p-GaN substrate. The unique energy level of Zn2GeO4 NWs promotes electron injection into GaN active region while suppressing hole injection into Zn2GeO4 NWs. The device exhibited an emission centered at 426 nm and a low turn-on voltage around 4 V. Zn2GeO4 NWs are first reported in this paper as promising electron transport and injection material for electroluminescent devices.

Lead-free piezoelectrics: V3+ to V5+ ion conversion promoting the performances of V-doped Zinc Oxide

PubMed Central

Laurenti, M.; Castellino, M.; Perrone, D.; Asvarov, A.; Canavese, G.; Chiolerio, A.

2017-01-01

Vanadium doped ZnO (VZO) thin films were grown by RF magnetron sputtering, starting from a ZnO:V ceramic target. The crystal structure, chemical composition, electric and piezoelectric properties of the films were investigated either on the as-grown thin films or after a post-deposition rapid thermal annealing (RTA) treatment performed at 600 °C for different lengths of time (1 and 5 min) in an oxygen atmosphere. Substitutional doping of Zn2+ with V3+ and V5+ ions strongly deteriorated the hexagonal wurtzite ZnO structure of the as-grown thin films due to lattice distortion. The resulting slight amorphization led to a poor piezoelectric response and higher resistivity. After the RTA treatment, strong c-axis oriented VZO thin films were obtained, together with a partial conversion of the starting V3+ ions into V5+. The improvement of the crystal structure and the stronger polarity of both V3+ – O and V5+ – O chemical bonds, together with the corresponding easier rotation under the application of an external electric field, positively affected the piezoelectric response and increased conductivity. This was confirmed by closed-loop butterfly piezoelectric curves, by a maximum d33 piezoelectric coefficient of 85 pm·V−1, and also by ferroelectric switching domains with a well-defined polarization hysteresis curve, featuring a residual polarization of 12.5 μC∙cm−2. PMID:28165040

Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability.

PubMed

Jha, Shrawan; Qian, Jin-Cheng; Kutsay, Oleksandr; Kovac, Jaroslav; Luan, Chun-Yan; Zapien, Juan Antonio; Zhang, Wenjun; Lee, Shuit-Tong; Bello, Igor

2011-06-17

In this paper, we report a fabrication, characterization and stability study of p-GaN/n-ZnO nanorod heterojunction light-emitting devices (LEDs). The LEDs were assembled from arrays of n-ZnO vertical nanorods epitaxially grown on p-GaN. LEDs showed bright electroluminescence in blue (440 nm), although weaker violet (372 nm) and green-yellow (550 nm) spectral components were also observed. The device characteristics are generally stable and reproducible. The LEDs have a low turn-on voltage (∼5 V). The electroluminescence (EL) is intense enough to be noticed by the naked eye, at an injection current as low as ∼ 40 µA (2.1 × 10(-2) A cm(-2) at 7 V bias). Analysis of the materials, electrical and EL investigations point to the role of a high quality of p-n nano-heterojunction which facilitates a large rectification ratio (320) and a stable reverse current of 2.8 µA (1.4 × 10(-3) A cm(-2) at 5 V). Stability of EL characteristics was investigated in detail. EL intensity showed systematic degradation over a short duration when the LED was bias-stressed at 30 V. At smaller bias (<20 V) LEDs tend to show a stable and repeatable EL characteristic. Thus a simple low temperature solution growth method was successfully exploited to realize nanorod/film heterojunction LED devices with predictable characteristics.

Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

2018-03-01

High band gap (3.34 eV) and large exciton binding energy (60 meV) at room temperature facilitates ZnO as a useful candidate for optoelectronics devices. Presence of zinc interstitial and oxygen vacancies results in n-type ZnO film. Phosphorus implantation was carried out using plasma immersion ion implantation technique (2kV, 900W) for constant duration (50 s) on RF sputtered ZnO thin films (Sample A). For dopant activation, sample A was subjected to Rapid Thermal Annealing (RTA) at 700, 800, 900 and 1000°C for 10 s in Oxygen ambient (Sample B, C, D, E). Low temperature (18 K) photoluminescence measurement demonstrated strong donor bound exciton peak for sample A. Dominant donor to acceptor pair peak (DAP) was observed for sample D at around 3.22 eV with linewidth of 131.3 meV. High resolution x-ray diffraction measurement demonstrated (001) and (002) peaks for sample A. (002) peak with high intensity was observed from all annealed samples. Incorporation of phosphorus in ZnO films leads to peak shift towards higher 2θ angle indicate tensile strain in implanted samples. Scanning electron microscopy images reveals improvement in grain size distribution along with reduction of implantation related defects. Raman spectra measured A1(LO) peak at around 576 cm-1 for sample A. Low intensity E2 (high) peak was observed for sample D indicating formation of (PZn+2VZn) complexes. From room temperature Hall measurement, sample D measured 1.17 x 1018 cm -3 carrier concentration with low resistivity of 0.464 Ω.

Effect of surfactant amount on the morphology and magnetic properties of monodisperse ZnFe{sub 2}O{sub 4} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Haitao, E-mail: zht95711lunwen@163.com; Liu, Ruiping; Zhang, Qiang

2016-03-15

Graphical abstract: Polyol process to monodisperse ZnFe{sub 2}O{sub 4} nanoparticles. - Highlights: • An one-step, facile and inexpensive synthetic route to monodisperse ZnFe{sub 2}O{sub 4} nanoparticles is described. • The sodium citrate stabilized ZnFe{sub 2}O{sub 4} nanoparticles with a diameter in the 5–8 nm size range can be easily dispersed in water. • The synthesis is very robust in terms of variations of experimental parameters. • ZnFe{sub 2}O{sub 4} nanoparticles present ferrimagnetic behavior at room temperature with a small hysteresis. - Abstract: The spinel ZnFe{sub 2}O{sub 4} ferrites with sodium citrate as a surfactant were fabricated by polyol process. Themore » effect of surfactant amount on the structure, morphology and magnetic properties of ZnFe{sub 2}O{sub 4} ferrites were investigated by X-ray diffraction(XRD), transmission electron microscope (TEM), thermogravimetric and differential scanning calorimetry (TG–DSC) and vibrating sample magnetometry (VSM), respectively. The results indicate that the structure of ZnFe{sub 2}O{sub 4} ferrites is a pure cubic spinel structure with a particle size of 5–8 nm. The dispersion of the synthesized ZnFe{sub 2}O{sub 4} is enhanced when the mole ratio of Fe(acac){sub 3} to sodium citrate decreases. The synthesized particles present ferrimagnetic behavior with a small hysteresis at room temperature. The increase of surfactant amount conversely leads to the decrease in the saturation magnetization value (Ms) especially when the mole ratio of Fe(acac){sub 3} to sodium citrate decreases to 8:3. Its Ms value is drastically reduced to 18.97 emu/g.« less

Development of zinc oxide nanoparticle by sonochemical method and study of their physical and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Samreen Heena, E-mail: samreen.heena.khan@gmail.com; Suriyaprabha, R.; Pathak, Bhawana, E-mail: bhawana.pathak@cug.ac.in

With the miniaturization of crystal size, the fraction of under-coordinated surface atoms becomes dominant, and hence, materials in the nano-regime behave very differently from the similar material in a bulk. Zinc oxide (ZnO), particularly, exhibits extraordinary properties such as a wide direct band gap (3.37 eV), large excitation binding energy (60 meV), low refractive index (1.9), stability to intense ultraviolet (UV) illumination, resistance to high-energy irradiation, and lower toxicity as compared to other semiconductors. This very property makes Zinc Oxide a potential candidate in many application fields, particularly as a prominent semiconductor. Zinc Oxide plays a significant role in manymore » technological advances with its application in semiconductor mediated photocatalytic processes and sensor, solar cells and others. In present study, Zinc Oxide (ZnO) has been synthesized using three different precursors by sonochemical method. Zinc Acetate Dihydrate, Zinc Nitrate Hexahydrate and Zinc Sulphate Heptahydrate used as a precursor for the synthesis process. The synthesized ZnO nanoparticle has been found under the range of ∼50 nm. Zinc oxide nanoparticles were characterized using different characterizing tools. The as-synthesized ZnO was characterized by Fourier Transform-Infrared Spectroscopy (FT-IR) for the determination of functional group; Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS) for Morphology and elemental detection respectively, Transmission Electron Microscopy for Particle size distribution and morphology and X-Ray Diffraction (XRD) for the confirmation of crystal structure of the nanomaterial. The optical properties of the ZnO were examined by UV-VIS spectroscopy equipped with Diffuse Reflectance spectroscopy (DRS) confirmed the optical band gap of ZnO-3 around 3.23 eV resembles with the band gap of bulk ZnO (3.37eV). The TEM micrograph of the as-synthesized material showed perfectly spherical shaped nanoparticle under the size range of 50nm. The XRD data showed that the ZnO-3 which was synthesized using Zinc Nitrate Hexahydrate as precursor showed the hexagonal wurtzite crystal structure. The XRD data obtained were compared with the JCPDS standard data. The precursor Zinc Nitrate Hexahydrate (ZnO-3) showed the good yield, monodispersity and size of nanoparticle under the range of 50 nm. The ZnO nanoparticles synthesize using different precursor was found effective in order of ZnO-3, followed by ZnO-1 & ZnO-2. The Synthesized ZnO has wider application in environmental remediation and clean-up as a potential nano-catalyst.« less

Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds

NASA Astrophysics Data System (ADS)

Hopper, E. Mitchell; Zhu, Qimin; Gassmann, Jürgen; Klein, Andreas; Mason, Thomas O.

2013-01-01

The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.

Synthesis and characterization of Cu-Zn/TiO2 for the photocatalytic conversion of CO2 to methane.

PubMed

Rana, Adeem Ghaffar; Ahmad, Waqar; Al-Matar, Ali; Shawabkeh, Reyad; Aslam, Zaheer

2017-05-01

Different Cu-Zn/TiO 2 catalysts were synthesized by using the wet impregnation method. The prepared catalysts were used for the conversion of CO 2 into methane by photocatalysis. Various characterization techniques were used to observe the surface morphology, crystalline phase, Brunauer-Emmett-Teller (BET) surface area, presence of impregnated Cu and Zn, and functional group. Scanning electron microscope analysis showed spherical morphology, and slight agglomeration of catalyst particles was observed. BET analysis revealed that the surface area of the catalyst was decreased from 10 to 8.5 m 2 /g after impregnation of Cu and Zn over TiO 2 support. Synergetic effect of Cu and Zn over TiO 2 support (Cu 2.6 /TiO 2 , Zn 0.5 /TiO 2 and Cu 2.6 -Zn 0.5 /TiO 2 ) and the effects of Cu loading (0, 1.8, 2.1, 2.6 and 2.9 wt%) were also investigated at different feed molar ratios of H 2 /CO 2 (2:1 and 4:1). The Cu 2.6 -Zn 0.5 /TiO 2 catalyst showed a maximum conversion of 14.3% at a feed molar ratio of 4. The addition of Zn over the catalyst surface increased the conversion of CO 2 from 10% to 14.3% which might be due to synergy of Cu and Zn over TiO 2 support.

Study on swift heavy ions induced modifications of Ag-ZnO nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.; Siva Kumar, V. V.

2017-03-01

In the present work, swift heavy ion (SHI) irradiation induced modifications in structural and optical properties of Ag-ZnO nanocomposite thin films have been investigated. Ag-ZnO nanocomposite (NCs) thin films were synthesized by RF magnetron sputtering technique and irradiated with 100 MeV Ag7+ ions at three different fluences 3 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Rutherford Backscattering Spectrometry revealed Ag concentration to be ∼8.0 at.%, and measured thickness of the films was ∼55 nm. Structural properties of pristine and irradiated films have been analyzed by X-ray diffraction analysis and found that variation in crystallite size of the film with ion irradiation. X-ray photoelectron spectroscopy (XPS) indicates the formation of Ag-ZnO nanocomposite thin film with presence of Ag, Zn and O elements. Oxidation state of Ag and Zn also estimated by XPS analysis. Surface plasmon resonance (SPR) of Ag nanoparticle has appeared at ∼475 nm in the pristine thin film, which is blue shifted by ∼30 nm in film irradiated at fluence of 3 × 1012 ions/cm2 and completely disappeared in film irradiated at higher fluences, 1 × 1013 and 3 × 1013 ions/cm2. A marginal change in the optical band gap of Ag-ZnO nanocomposite thin film is also found with increasing ion fluence. Surface morphology of pristine and irradiated films have been studied using Atomic Force Microscopy (AFM). Raman and Photo-luminance (PL) spectra of nanocomposite thin films have been investigated to understand the ion induced modifications such as lattice defects and disordering in the nanocomposite thin film.

Synthesis and Magnetic Properties of Ni-DOPED ZnO Thin Films: Experimental and AB INITIO Study

NASA Astrophysics Data System (ADS)

Rouchdi, M.; Salmani, E.; Hat, A. El; Hassanain, N.; Mzerd, A.

Structural and magnetic properties of Zn1-xNixO thin films and diluted magnetic semiconductors have been investigated. This sample has been synthesized using a spray pyrolysis technique with a stoechiometric mixture of zinc acetate (C4H6O4Znṡ2H2O) and Nickel acetate (C4H6O4Niṡ 2H2O) on a heated glass substrate at 450∘C. The films were characterized by X-ray diffraction (XRD), UV-Vis spectrophotometry and Hall Effect measurements. These films of ZnO crystallized in the hexagonal Wurtzite structure. The optical study showed that the band-gap energy was increased, from 3.3eV to 3.5eV, with increasing the Ni concentration. The film resistivity was affected by Ni-doping, and the best resistivity value 1.15×10-2 (Ω cm) was obtained for the film doped with 2 at.% Ni. The electronic structure and optical properties of the Wurtzite structure Zn1-xNixO were obtained by first-principles calculations using the Korringa-Kohn-Rostoker method combined with the coherent potential approximation (CPA), as well as CPA confirm our results.

Investigation of nanocrystalline zinc chromite obtained by two soft chemical routes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gingasu, Dana; Mindru, Ioana, E-mail: imandru@yahoo.com; Culita, Daniela C.

2014-01-01

Graphical abstract: - Highlights: • Two soft chemical routes to synthesize zinc chromites are described. • Glycine is used as chelating agent (precursor method) and fuel (solution combustion method). • The synthesized chromites have crystallite size in the range of 18–27 nm. • An antiferromagnetic (AFM) transition is observed at about T{sub N} ∼ 18 K. - Abstract: Zinc chromite (ZnCr{sub 2}O{sub 4}) nanocrystalline powders were obtained by two different chemical routes: the precursor method and the solution combustion method involving glycine-nitrates. The complex compound precursors, [ZnCr{sub 2}(NH{sub 2}CH{sub 2}COO){sub 8}]·9H{sub 2}O and [ZnCr{sub 2}(NH{sub 2}CH{sub 2}COOH){sub 4.5}]·(NO{sub 3}){sub 8}·6H{submore » 2}O, were characterized by chemical analysis, infrared spectroscopy (IR), ultraviolet–visible spectroscopy (UV–vis) and thermal analysis. The structure, morphology, surface chemistry and magnetic properties of ZnCr{sub 2}O{sub 4} powders were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), infrared and Raman spectroscopy (RS), ultraviolet–visible spectroscopy (UV–vis) and magnetic measurements. X-ray diffraction patterns indicated the chromite spinel phase with good crystallinity and an average crystallite size of approximately 18–27 nm. The band gap values ranged between 3.31 and 3.33 eV. The magnetic measurements indicated an antiferromagnetic transition at T{sub N} ∼ 17.5/18 K.« less

Electrochemiluminescence assay of Cu2+ by using one-step electrodeposition synthesized CdS/ZnS quantum dots.

PubMed

Zhao, Guanhui; Li, Xiaojian; Zhao, Yongbei; Li, Yueyuan; Cao, Wei; Wei, Qin

2017-08-21

A sensitive and selective method was proposed to detect Cu 2+ based on the electrochemiluminescence quenching of CdS/ZnS quantum dots (QDs). Herein, CdS/ZnS QDs were one-step electrodeposited directly on a gold electrode from an electrolyte (containing Cd(NO 3 ) 2 , Zn(NO 3 ) 2 , EDTA and Na 2 S 2 O 3 ) by cycling the potential from 0 to -1.8 V. The prepared CdS/ZnS QDs exhibited excellent solubility and strong and stable cathodic ECL activity. Meanwhile, Nafion was used to immobilize CdS/ZnS QDs. The quenching effect of Cu 2+ on the cathodic ECL of CdS/ZnS QDs was found to be selective and concentration dependent. The linear range for Cu 2+ detection was from 2.5 nM to 200 nM with a detection limit of 0.95 nM. Furthermore, the designed method for the detection of Cu 2+ can provide a reference for the detection of other heavy metal ions.

Electrodeposition mechanism of quaternary compounds Cu2ZnSnS4: Effect of the additives

NASA Astrophysics Data System (ADS)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Liu, Jingjun; Ji, Jing; Song, Ye

2018-01-01

The electrodeposition mechanism of pure phase Cu2ZnSnS4 (CZTS) thin film with subsequent annealing was investigated in detail. An electrolyte design principle of quaternary compounds was proposed. The complex ions of Cu(H2C6H5O7)+, Cu2(C6H5O7)+, Zn(C4H5O6)+, Sn(H2C6H5O7)+ and Sn2(C6H5O7)+, which influenced the reduction process and played important roles in co-deposition, were identified by UV spectra. Electrochemical studies indicated that trisodium citrate and tartaric acid could narrow the co-deposition potential range of the four elements to -0.8 V to -1.2 V (vs. SCE). The cause was the synergetic effect that trisodium citrate inhibited the reduction of Cu2+ and Sn2+ and tartaric acid promoted the reduction of Zn2+. The reduction of S2O32- was mainly attributed to the induction effect of the metallic ions, and the H+ dissociated from tartaric acid could also promote the cathode process of S2O32-. The reaction mechanism could be summarized as the following steps: (I) Cu(H2C6H5O7)+, Cu2(C6H5O7)+ → Cu, Sn(H2C6H5O7)+, Sn2(C6H5O7)+ → Sn, Zn(C4H5O6)+ → Zn; (II) the desorption of (H2C6H5O7)- and (C6H5O7)-, and the reduction of S2O32- induced by metallic ions and H+. The mechanism studies provided a path of electrolyte design for multicomponent compounds.

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

NASA Astrophysics Data System (ADS)

Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

2016-12-01

Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

NASA Astrophysics Data System (ADS)

Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

2018-05-01

NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

Structural and optical properties of ZnO nanorods on Mg0.2Zn0.8O seed layers grown by hydrothermal method.

PubMed

Kim, Min Su; Kim, Do Yeob; Kim, Sung-O; Leem, Jae-Young

2013-05-01

ZnO nanorods were grown on the Mg0.2Zn0.8O seed layers with different thickness by hydrothermal method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out to investigate the effects of the Mg0.2Zn0.8O seed layer thickness on the structural and the optical properties of the ZnO nanorods. The residual stress in the Mg0.2Zn0.8O seed layers was depended on the thickness while the texture coefficient of the Mg0.2Zn0.8O seed layers was not affected significantly. The smaller full width at half maximum (FWHM) of the ZnO (002) diffraction and near-band-edge emission (NBE) peak and the larger average grain size were observed from the ZnO nanorods grown on the Mg0.2Zn0.8O seed layers with 5 layers (thickness of 350 nm), which indicate the enhancement the structural and the optical properties of the ZnO nanorods.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

PubMed Central

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M.A.; Ahamed, Maqusood

2015-01-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33–55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved. PMID:26347142

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

NASA Astrophysics Data System (ADS)

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

2015-09-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells.

PubMed

Akhtar, Mohd Javed; Alhadlaq, Hisham A; Alshamsan, Aws; Majeed Khan, M A; Ahamed, Maqusood

2015-09-08

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of Al(x)Zn(1-x)O nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 &caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Energy, angular and spatial distributions of primary electrons inside photoconducting materials for digital mammography: Monte Carlo simulation studies.

PubMed

Sakellaris, T; Spyrou, G; Tzanakos, G; Panayiotakis, G

2007-11-07

Materials such as a-Se, a-As(2)Se(3), GaSe, GaAs, Ge, CdTe, CdZnTe, Cd(0.8)Zn(0.2)Te, ZnTe, PbO, TlBr, PbI(2) and HgI(2) are potential candidates as photoconductors in direct detectors for digital mammography. The x-ray induced primary electrons inside a photoconductor's bulk comprise the initial signal that propagates and forms the final signal (image) on the detector's electrodes. An already developed model for a-Se has been properly extended to simulate the primary electron production in the materials mentioned. Primary electron characteristics, such as their energy, angular and spatial distributions that strongly influence the characteristics of the final image, were studied for both monoenergetic and polyenergetic x-ray spectra in the mammographic energy range. The characteristic feature in the electron energy distributions for PbI(2) and HgI(2) is the atomic deexcitation peaks, whereas for the rest of the materials their shape can also be influenced by the electrons produced from primary photons. The electrons have a small tendency to be forward ejected whereas they prefer to be ejected perpendicular (theta = pi/2) to the incident beam's axis and at two lobes around phi = 0 and phi = pi. At practical mammographic energies (15-40 keV) a-Se, a-As(2)Se(3) and Ge have the minimum azimuthal uniformity whereas CdZnTe, Cd(0.8)Zn(0.2)Te and CdTe the maximum one. The spatial distributions for a-Se, a-As(2)Se(3), GaSe, GaAs, Ge, PbO and TlBr are almost independent of the polyenergetic spectrum, while those for CdTe, CdZnTe, Cd(0.8)Zn(0.2)Te, ZnTe, PbI(2) and HgI(2) have a spectrum dependence. In the practical mammographic energy range and at this primitive stage of primary electron production, a-Se has the best inherent spatial resolution as compared to the rest of the photoconductors. PbO has the minimum bulk space in which electrons can be produced whereas CdTe has the maximum one.

Uniformly Dispersed ZnFe2O4 Nanoparticles on Nitrogen-Modified Graphene for High-Performance Supercapacitor as Electrode.

PubMed

Li, Lei; Bi, Huiting; Gai, Shili; He, Fei; Gao, Peng; Dai, Yunlu; Zhang, Xitian; Yang, Dan; Zhang, Milin; Yang, Piaoping

2017-02-21

A facile strategy has been adopted for the preparation of ZnFe 2 O 4 /NRG composite by anchoring ultrasmall ZnFe 2 O 4 nanoparticles on nitrogen-doped reduced graphene (denoted as NRG) for high-performance supercapacitor electrode. Remarkably, the growth of ZnFe 2 O 4 nanocrystals, the reduction of graphitic oxide and the doping of nitrogen to graphene have been simultaneously achieved in one process. It is found that the NRG employed as substrate can not only control the formation of nano-sized ZnFe 2 O 4 , but also guarantee the high dispersion without any agglomeration. Benefiting from this novel combination and construction, the hybrid material has large surface area which can provide high exposure of active sites for easy access of electrolyte and fast electron transport. When served as supercapacitor electrode, the ZnFe 2 O 4 /NRG composite exhibits a favorable specific capacitance of 244 F/g at 0.5 A/g within the potential range from -1 to 0 V, desirable rate stability (retain 131.5 F/g at 10 A/g) and an admirable cycling durability of 83.8% at a scan rate of 100 mV/s after 5000 cycles. When employed as symmetric supercapacitor, the device demonstrates favorable performance. These satisfactory properties of the ZnFe 2 O 4 /NRG composite can make it be of great promise in the supercapacitor application.

Manipulating the magnetism and resistance state of Mn:ZnO/Pb(Zr0.52Ti0.48)O3 heterostructured films through electric fields

NASA Astrophysics Data System (ADS)

Li, Yong-Chao; Wu, Jun; Pan, Hai-Yang; Wang, Jue; Wang, Guang-Hou; Liu, Jun-Ming; Wan, Jian-Guo

2018-05-01

Mn:ZnO/Pb(Zr0.52Ti0.48)O3 (PZT) heterostructured films have been prepared on Pt/Ti/SiO2/Si wafers by a sol-gel process. Nonvolatile and reversible manipulation of the magnetism and resistance by electric fields has been realized. Compared with the saturation magnetic moment (Ms) in the +3.0 V case, the modulation gain of Ms can reach 270% in the -3.0 V case at room temperature. The resistance change is attributed to the interfacial potential barrier height variation and the formation of an accumulation (or depletion) layer at the Mn:ZnO/PZT interface, which can be regulated by the ferroelectric polarization direction. The magnetism of Mn:ZnO originates from bound magnetic polarons. The mobile carrier variation in Mn:ZnO, owing to interfacial polarization coupling and the ferroelectric field effect, enables the electric manipulation of the magnetism in the Mn:ZnO/PZT heterostructured films. This work presents an effective method for modulating the magnetism of magnetic semiconductors and provides a promising avenue for multifunctional devices with both electric and magnetic functionalities.

Combined effects of ZnO NPs and seawater acidification on the haemocyte parameters of thick shell mussel Mytilus coruscus.

PubMed

Wu, Fangli; Cui, Shuaikang; Sun, Meng; Xie, Zhe; Huang, Wei; Huang, Xizhi; Liu, Liping; Hu, Menghong; Lu, Weiqun; Wang, Youji

2018-05-15

Flow cytometry was used to investigate the immune parameters of haemocytes in thick-shell mussel Mytilus coruscus exposed to different concentrations of ZnO nanoparticles (NPs) (0, 2.5, and 10mgl -1 ) at two pH levels (7.3 and 8.1) for 14days following a recovery period of 7days. ZnO NPs significantly affected all of the immune parameters throughout the experiment. At high ZnO NPs concentrations, total haemocyte counting, phagocytosis, esterase, and lysosomal content were significantly decreased whereas haemocyte mortality and reactive oxygen species (ROS) were increased. Although low pH also significantly influenced all of the immune parameters of the mussels, its effect was not as strong as that of ZnO NPs. Interactive effects were observed between pH and ZnO NPs in most haemocyte parameters during the exposure period. Although a slight recovery from the stress of ZnO NPs and pH was observed for all immune parameters, significant carry-over effects of low pH and ZnO NPs were still detected. This study revealed that high concentration of ZnO NPs and low pH exert negative and synergistic effects on mussels, and these effects remain even after the mussels are no longer exposed to such stressors. Copyright © 2017 Elsevier B.V. All rights reserved.

Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

NASA Astrophysics Data System (ADS)

Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

2018-05-01

This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

Thouless length and valley degeneracy factor of ZnMnO thin films with anisotropic, highly conductive surface layers

NASA Astrophysics Data System (ADS)

Vegesna, Sahitya V.; Bürger, Danilo; Patra, Rajkumar; Abendroth, Barbara; Skorupa, Ilona; Schmidt, Oliver G.; Schmidt, Heidemarie

2017-06-01

Isothermal magnetoresistance (MR) of n-type conducting Zn1-xMnxO thin films on a sapphire substrate with a Mn content of 5 at. % has been studied in in-plane and out-of-plane magnetic fields up to 6 T in the temperature range of 5 K to 300 K. During pulsed laser deposition of the ZnMnO thin films, we controlled the thickness and roughness of a highly conductive ZnMnO surface layer. The measured MR has been modeled with constant s-d exchange (0.2 eV in ZnMnO) and electron spin (S = 5/2 for Mn2+) for samples with a single two dimensional (2D) ZnMnO layer, a single three dimensional (3D) ZnMnO layer, or a 2D and 3D (2D + 3D) ZnMnO layer in parallel. The temperature dependence of modeled Thouless length LTh (LTh ˜ T-0.5) is in good agreement with the theory [Andrearczyk et al., Phys. Rev. B 72, 121309(R) (2005)]. The superimposed positive and negative MR model for ZnCoO thin films [Xu et al., Phys. Rev. B 76, 134417 (2007)] has been extended in order to account for the increase in the density of states close to the Fermi level of n-ZnMnO due to substitutional Mn2+ ions and their effect on the negative MR in ZnMnO.

Studies on mass attenuation coefficient, effective atomic number and electron density of some thermoluminescent dosimetric compounds

NASA Astrophysics Data System (ADS)

Önder, P.; Turşucu, A.; Demir, D.; Gürol, A.

2012-12-01

Mass attenuation coefficient, μm , effective atomic number, Zeff, and effective electron density, Nel, were determined experimentally and theoretically for some thermoluminescent dosimetric (TLD) compounds such as MgSO4, CdSO4, Al2O3, Mg2SiO4, ZnSO4, CaSO4, CaF2, NaSO4, Na4P2O7, Ca5F(PO4)3, SiO2, CaCO3 and BaSO4 at 8.04, 8.91, 13.37, 14.97, 17.44, 19.63, 22.10, 24.90, 30.82, 32.06, 35.40, 36.39, 37.26, 43.74, 44.48, 50.38, 51.70, 53.16, 80.99, 276.40, 302.85, 356.01, 383.85 and 661.66 keV photon energies by using an HPGe detector with a resolution of 182 eV at 5.9 keV. The theoretical mass attenuation coefficients were estimated using mixture rule. The calculated values were compared with the experimental values for all compounds. Good agreement has been observed between experimental and theoretical values within experimental uncertainties.

Optical properties of zinc lead tellurite glasses

NASA Astrophysics Data System (ADS)

Alazoumi, Salah Hassan; Aziz, Sidek Abdul; El-Mallawany, R.; Aliyu, Umar Sa'ad; Kamari, Halimah Mohamed; Zaid, Mohd Hafiz Mohd Mohd; Matori, Khamirul Amin; Ushah, Abdulbaset

2018-06-01

Tellurite glass systems in the form of [ZnO]x [(TeO2)0.7-(PbO)0.3]1-x with x = 0.15, 0.17, 0.20, 0.22 and 0.25 mol% were prepared using the melt quenching technique. XRD of the prepared samples have been measured for all samples. Both FTIR (280-4000 cm-1) and UV-Vis (200-800 nm) spectra have been measured. Optical band gap and refractive index were calculated for every glass sample. Density of glass, molar volume and oxygen packing density (OPD) were obtained. Values of the direct, indirect band gap ranged were found in the range 3.41-3.94 eV and 2.40-2.63 eV with increasing of ZnO concentration. Refractive index 2.58 and dielectric constant 6.66 were heigh at 17 ZnO mol% concentration. Molar polarizability, metallization criterion, polaron radius have been calculated for every glass composition.

Electrical properties of TiO2 at different deposition frequencies and their application in ZnO/TiO2 based dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Saurdi, I.; Shafura, A. K.; Mamat, M. H.; Ishak, A.; Rusop, M.

2018-05-01

In this work, the titanium oxide (TiO2) films were deposited on glass substrate at different deposition frequencies (1, 2, 3 and 4 times) and therefore different of thicknesses been produced by using spin coating technique and their electrical and structural properties were investigated. The thicknesses of TiO2 films at different deposition frequencies (1, 2, 3 and 4 times) were 900μm, 1815μm, 2710μm and 3620μm respectively. Meanwhile, the resistivities of TiO2 films at different deposition frequencies (1, 2, 3 and 4 times) were 5.41 × 106Ωcm, 2.28 × 106Ωcm, 2.78 × 105Ωcm and 8.37 × 106Ωcm, respectively. The ZnO/TiO2 composite for ZnO nanorod and TiO2 been produced by deposited the TiO2 on top of ZnO nanorod at different deposition frequencies on ITO-coated glass substrate. The fabricated dye-sensitized solar cells of ZnO nanorod without TiO2, ZnO/TiO2 with a TiO2 thickness 900μm, ZnO/TiO2 with a TiO2 thickness 1815μm, ZnO/TiO2 with a TiO2 thickness 2710μm, ZnO/TiO2 with a TiO2 thickness 3620μm on top of ZnO nanorod were investigated. From the solar simulator measurement under AM 1.5 the solar energy conversion efficiency (η) of ZnO nanorod without TiO2, ZnO/TiO2- 900μm, ZnO/TiO2-1815μm, ZnO/TiO2-2710μm and ZnO/TiO2-3620μm were 0.99%, 1.87%, 2.11%, 2.54%, 2.27%, respectively. The DSSCs ZnO/TiO2 show better of efficiency as compared to ZnO nanorod without TiO2. Furthermore, the enhancement of ZnO/TiO2-2710μm DSSC also closely related with the improvement of electrical and structural properties of TiO2 at 3 deposition frequencies as compared with TiO2 at 1, 2 and 4 deposition frequencies.

Dye anchored ZnO nanoparticles: The positive and negative photoluminescence quenching effects

NASA Astrophysics Data System (ADS)

Ganesh, T.; Kim, Jong Hoon; Yoon, Seog Joon; Lee, Sangjin; Lee, Wonjoo; Mane, Rajaram S.; Han, Jin Wook; Han, Sung-Hwan

2009-10-01

The positive and negative photoluminescence quenching effects in dye [BCMoxo and BCtCM (curcumin-derived molecules)] anchored ZnO nanoparticles (NPs) are investigated using the optical and electronic properties. The photoluminescence, band gap (BCMoxo, 2.2 eV; BCtCM, 2.3 eV), and wettability studies confirm an optical quenching, well-matched electronic structure and relative hydrophobic nature, respectively, in the presence of dicarboxylic anchor groups (BCtCM) on ZnO NPs in contrast to that of keto groups (BCMoxo). Systematic change in UV-visible absorption band edge is noticeable for the BCtCM and BCMoxo-anchored ZnO NPs. The atomic absorption spectroscopy and inductively coupled-mass-spectroscopy analysis quantitatively verifies the amount of BCtCM dye molecules present on ZnO NPs surface area about three times higher than that of BCMoxo dye molecule without anchor groups.

Exploring excitonic signal in optical conductivity of ZnO through first-order electron-hole vertex correction

NASA Astrophysics Data System (ADS)

Khoirunnisa, Humaira; Aziz Majidi, Muhammad

2018-04-01

The emergence of exitonic signal in the optical response of a wide band-gap semiconductor has been a common knowledge in physics. There have been numerous experimental studies exploring the important role of excitons on influencing both the transport and optical properties of the materials. Despite the existence of much information on excitonic effects, there has not been much literature that explores detailed theoretical explanation on how the exitonic signal appears and how it evolves with temperature. Here, we propose a theoretical study on the optical conductivity of ZnO, a well-known wide band-gap semiconductor that we choose as a case study. ZnO has been known to exhibit excitonic states in its optical spectra in the energy range of ∼3.13-3.41 eV, with a high exciton binding energy of ∼60 meV. An experimental study on ZnO in 2014 revealed such a signal in its optical conductivity spectrum. We present a theoretical investigation on the appearance of excitonic signal in optical conductivity of ZnO. We model the wurtzite ZnO within an 8-band k.p approximation. We calculate the optical conductivity by incorporating the first-order vertex correction derived from the Feynman diagrams. Our calculation up to the first-order correction spectrum qualitatively confirms the existence of excitons in wurtzite ZnO.

Low Temperature Annealed Zinc Oxide Nanostructured Thin Film-Based Transducers: Characterization for Sensing Applications

PubMed Central

Haarindraprasad, R.; Hashim, U.; Gopinath, Subash C. B.; Kashif, Mohd; Veeradasan, P.; Balakrishnan, S. R.; Foo, K. L.; Poopalan, P.

2015-01-01

The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH. PMID:26167853

Tuning the third-order nonlinear optical properties of In:ZnO thin films by 8 MeV electron beam irradiation

NASA Astrophysics Data System (ADS)

Shettigar, Nayana; Pramodini, S.; Kityk, I. V.; Abd-Lefdil, M.; Eljald, E. M.; Regragui, M.; Antony, Albin; Rao, Ashok; Sanjeev, Ganesh; Ajeyakashi, K. C.; Poornesh, P.

2017-11-01

We report the third-order nonlinear optical properties of electron beam treated Indium doped ZnO (Zn1-xInxO (x = 0.03) thin films at different dose rate. Zn1-xInxO (x = 0.03) thin films prepared by spray pyrolysis deposition technique were irradiated using 8 MeV electron beam at dose rates ranging from 1 kGy to 4 kGy. X-ray diffraction patterns were obtained to examine the structural changes, The transformation from sphalerite to wurtzite structure of ZnO was observed which indicates occurrence of structural changes due to irradiation. Morphology of irradiated thin films examined using atomic force microscopy (AFM) technique indicates the surface roughness varying with irradiation dose rate. The switching over from Saturable Absorption (SA) to Reverse Saturable Absorption (RSA) behaviour was noted when the irradiation dose rate was increased from 1 kGy to 4 kGy. The significant changes observed in the third-order nonlinear optical susceptibility χ(3) of the Zn1-xInxO (x = 0.03) thin films is attributed mainly due to electron beam irradiation. The study indicates that nonlinear optical parameters can be controlled by electron beam irradiation by choosing appropriate dose rate which is very much essential for device applications. Hence Zn1-xInxO (x = 0.03) materialize as a promising material for use in nonlinear optical device applications.

Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

NASA Astrophysics Data System (ADS)

Na, So-Yeong; Kim, Yeo-Myeong; Yoon, Da-Jeong; Yoon, Sung-Min

2017-12-01

The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 °C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10-8 A cm-2, high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm2 V-1 s-1, a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as  ±3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.

Preparation and Characterization of ZnO Nanoparticles Supported on Amorphous SiO2

PubMed Central

Chen, Ying; Ding, Hao; Sun, Sijia

2017-01-01

In order to reduce the primary particle size of zinc oxide (ZnO) and eliminate the agglomeration phenomenon to form a monodisperse state, Zn2+ was loaded on the surface of amorphous silica (SiO2) by the hydrogen bond association between hydroxyl groups in the hydrothermal process. After calcining the precursors, dehydration condensation among hydroxyl groups occurred and ZnO nanoparticles supported on amorphous SiO2 (ZnO–SiO2) were prepared. Furthermore, the SEM and TEM observations showed that ZnO nanoparticles with a particle size of 3–8 nm were uniformly and dispersedly loaded on the surface of amorphous SiO2. Compared with pure ZnO, ZnO–SiO2 showed a much better antibacterial performance in the minimum inhibitory concentration (MIC) test and the antibacterial properties of the paint adding ZnO–SiO2 composite. PMID:28796157

ZnO nanorod array/CuAlO2 nanofiber heterojunction on Ni substrate: synthesis and photoelectrochemical properties.

PubMed

Ding, Juan; Sui, Yongming; Fu, Wuyou; Yang, Haibin; Zhao, Bo; Li, Minghui

2011-07-22

A novel ZnO nanorod array (NR)/CuAlO(2) nanofiber (NF) heterojunction nanostructure was grown on a substrate of Ni plates using sol-gel synthesis for the NFs and hydrothermal reaction for the NRs. Compared with a traditional ZnO/CuAlO(2) laminar film nanostructure, the photocurrent of this fibrous network heterojunction is significantly increased. A significant blue-shift of the absorption edge and a favorable forward current to reverse current ratio at applied voltages of -2 to +2 V were observed in this heterojunction with the increase of Zn(2+) ion concentration in the hydrothermal reaction. Furthermore, the photoelectrochemical properties were investigated and the highest photocurrent of 3.1 mA cm(-2) was obtained under AM 1.5 illumination with 100 mW cm(-2) light intensity at 0.71 V (versus Ag/AgCl). This novel 3D fibrous network nanostructure plays an important role in the optoelectronic field and can be extended to other binary or ternary oxide compositions for various applications.

ZnO nanorod array/CuAlO2 nanofiber heterojunction on Ni substrate: synthesis and photoelectrochemical properties

NASA Astrophysics Data System (ADS)

Ding, Juan; Sui, Yongming; Fu, Wuyou; Yang, Haibin; Zhao, Bo; Li, Minghui

2011-07-01

A novel ZnO nanorod array (NR)/CuAlO2 nanofiber (NF) heterojunction nanostructure was grown on a substrate of Ni plates using sol-gel synthesis for the NFs and hydrothermal reaction for the NRs. Compared with a traditional ZnO/CuAlO2 laminar film nanostructure, the photocurrent of this fibrous network heterojunction is significantly increased. A significant blue-shift of the absorption edge and a favorable forward current to reverse current ratio at applied voltages of - 2 to + 2 V were observed in this heterojunction with the increase of Zn2 + ion concentration in the hydrothermal reaction. Furthermore, the photoelectrochemical properties were investigated and the highest photocurrent of 3.1 mA cm - 2 was obtained under AM 1.5 illumination with 100 mW cm - 2 light intensity at 0.71 V (versus Ag/AgCl). This novel 3D fibrous network nanostructure plays an important role in the optoelectronic field and can be extended to other binary or ternary oxide compositions for various applications.

A Co3O4-embedded porous ZnO rhombic dodecahedron prepared using zeolitic imidazolate frameworks as precursors for CO2 photoreduction

NASA Astrophysics Data System (ADS)

Wang, Tao; Shi, Li; Tang, Jing; Malgras, Victor; Asahina, Shunsuke; Liu, Guigao; Zhang, Huabin; Meng, Xianguang; Chang, Kun; He, Jianping; Terasaki, Osamu; Yamauchi, Yusuke; Ye, Jinhua

2016-03-01

Metal-organic frameworks (MOFs) are attracting considerable attention for their use as both the precursor and the template to prepare metal oxides or carbon-based materials. For the first time in this paper, the core-shell ZIF-8@ZIF-67 crystals are thermally converted into porous ZnO@Co3O4 composites by combining a seed-mediated growth process with a two-step calcination. The designed porous ZnO@Co3O4 composites exhibited the highest photocatalytic activity with an excellent stability for the reduction of CO2 among the commonly reported composite photocatalysts. Their superior photocatalytic performance is demonstrated to be resulting from the unique porous structure of ZnO@Co3O4 and the co-catalytic function of Co3O4 which can effectively suppress the photocorrosion of ZnO.Metal-organic frameworks (MOFs) are attracting considerable attention for their use as both the precursor and the template to prepare metal oxides or carbon-based materials. For the first time in this paper, the core-shell ZIF-8@ZIF-67 crystals are thermally converted into porous ZnO@Co3O4 composites by combining a seed-mediated growth process with a two-step calcination. The designed porous ZnO@Co3O4 composites exhibited the highest photocatalytic activity with an excellent stability for the reduction of CO2 among the commonly reported composite photocatalysts. Their superior photocatalytic performance is demonstrated to be resulting from the unique porous structure of ZnO@Co3O4 and the co-catalytic function of Co3O4 which can effectively suppress the photocorrosion of ZnO. Electronic supplementary information (ESI) available: Additional TG and DTA curves, XRD patterns, SEM images, TEM images, N2 adsorption-desorption isotherms, X-ray photoelectron spectroscopy and GC-MS spectra of the samples. See DOI: 10.1039/c5nr08747c

Preparation of low cost n-ZnO/MgO/p-Si heterojunction photodetector by laser ablation in liquid and spray pyrolysis

NASA Astrophysics Data System (ADS)

Ismail, Raid A.; Khashan, Khawla S.; Jawad, Muslim F.; Mousa, Ali M.; Mahdi, Farah

2018-05-01

In this study, low cost ZnO/Si and ZnO/MgO/Si heterojunction (HJ) photodetectors were fabricated using laser ablation and spray Pyrolysis techniques. MgO nanofibers were synthesized by laser ablation of Mg target in distilled water. Also; the ZnO films were prepared by spray pyrolysis technique. The optical and structural properties of nanostructured MgO were investigated using XRD, SEM and FT-IR. The XRD results showed that the MgO was polycrystalline with cubic structure. SEM investigation confirmed the formation of MgO nanofibers and sub-microparticles. The optical energy gaps of MgO and ZnO were calculated and found to be 5.7 eV and 3.3 eV, respectively. For the electrical properties; responsivity, quantum efficiency, specific detectivity, and speed of response of the photodetector were measured and found to enhance after the insertion of nanostructured MgO film. The Photoresponse results at 3 V reverse bias showed that the maximum responsivity of ZnO/Si and ZnO/MgO/Si photodetectors were 185 and 331 mAW‑1 at 500 nm, respectively. The specific detectivity of ZnO/MgO/Si Photodetector was higher than that of ZnO/Si.

Study on Zinc Oxide-Based Electrolytes in Low-Temperature Solid Oxide Fuel Cells

PubMed Central

Qiao, Zheng; Feng, Chu; Wang, Baoyuan; Zhu, Bin

2017-01-01

Semiconducting-ionic conductors have been recently described as excellent electrolyte membranes for low-temperature operation solid oxide fuel cells (LT-SOFCs). In the present work, two new functional materials based on zinc oxide (ZnO)—a legacy material in semiconductors but exceptionally novel to solid state ionics—are developed as membranes in SOFCs for the first time. The proposed ZnO and ZnO-LCP (La/Pr doped CeO2) electrolytes are respectively sandwiched between two Ni0.8Co0.15Al0.05Li-oxide (NCAL) electrodes to construct fuel cell devices. The assembled ZnO fuel cell demonstrates encouraging power outputs of 158–482 mW cm−2 and high open circuit voltages (OCVs) of 1–1.06 V at 450–550 °C, while the ZnO-LCP cell delivers significantly enhanced performance with maximum power density of 864 mW cm−2 and OCV of 1.07 V at 550 °C. The conductive properties of the materials are investigated. As a consequence, the ZnO electrolyte and ZnO-LCP composite exhibit extraordinary ionic conductivities of 0.09 and 0.156 S cm−1 at 550 °C, respectively, and the proton conductive behavior of ZnO is verified. Furthermore, performance enhancement of the ZnO-LCP cell is studied by electrochemical impedance spectroscopy (EIS), which is found to be as a result of the significantly reduced grain boundary and electrode polarization resistances. These findings indicate that ZnO is a highly promising alternative semiconducting-ionic membrane to replace the electrolyte materials for advanced LT-SOFCs, which in turn provides a new strategic pathway for the future development of electrolytes. PMID:29283395

Novel room temperature synthesis of ZnO nanosheets, characterization and potentials in light harvesting applications and electrochemical devices.

PubMed

Mansournia, Mohammadreza; Rafizadeh, Somayeh; Hosseinpour-Mashkani, S Mostafa; Motaghedifard, Mohammad Hassan

2016-08-01

Zinc oxide nanosheets (ZnONSs) were successfully synthesized using Zn(NO3)2·4H2O as the starting reagent in ammonia atmosphere at room temperature by a novel gas-solution precipitation method. XRD and EDS patterns indicated that pure ZnONSs were produced only in 15min reaction time. Besides, investigating the optical properties of the as-prepared ZnO nanosheets using UV-Vis diffused reflectance spectroscopy (DRS) exhibited their semiconducting property by revealing one optical band gap in 3.3eV. Moreover, rhodamine B and methylene blue degradation were used as a probe reaction to test the as-synthesized ZnONSs photoactivity. Furthermore, a possible reaction mechanism for ZnONSs formation was discussed. On the other hand, operation of ZnONSs in Dye-sensitized solar cell (DSSC) was investigated by current density-voltage (Jsc-Voc) curve. Finally, a pencil graphite electrode was decorated using ZnONSs and pure MWCNT to provide an electrochemical device for Pb(+2) ions sensing. This modified electrode showed agreeable responses to trace amounts of Pb(+2) in NaOAC/HOAC buffer solutions. The limit of detection was found to be 0.112nmolL(-1) for Pb(+2). Copyright © 2016 Elsevier B.V. All rights reserved.

Improved conversion efficiency of dye sensitized solar cell using Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomar, Laxmi J., E-mail: laxmi-tomar86@yahoo.com; Bhatt, Piyush J.; Desai, Rahul K.

TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites were prepared by hydrothermal method for dye sensitized solar cell (DSSC) application. The structural and optical properties were investigated by X –ray diffraction (XRD) and UV-Visible spectroscopy respectively. XRD results revealed the formation of material in nano size. The average crystallite size is 22.32 nm, 17.41 nm and 6.31 nm for TiO{sub 2}, TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites respectively. The optical bandgap varies from 2.04 eV to 3.75 eV. Dye sensitized solar cells were fabricated using the prepared material. Pomegranate juice was used as a sensitizer and graphitemore » coated conducting glass plate was used as counter electrode. The I – V characteristics were recorded to measure photo response of DSSC. Photovoltaic parameter like open circuit voltage, power conversion efficiency, and fill factor were evaluated for fabricated solar cell. The power conversion efficiency of DSSC fabricated with TiO{sub 2}, TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites were found 0.71%, 1.97% and 4.58% respectively.« less

Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

NASA Astrophysics Data System (ADS)

Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

2017-12-01

In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

NASA Astrophysics Data System (ADS)

Oh, Min-Suk

2018-04-01

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

Study on Thermochromic VO2 Films Grown on ZnO-Coated Glass Substrates for “Smart Windows”

NASA Astrophysics Data System (ADS)

Kato, Kazuhiro; Song, Pung Keun; Odaka, Hidehumi; Shigesato, Yuzo

2003-10-01

Vanadium dioxide (VO2) is one of the most attractive thermochromic materials, which show large changes in optical and electrical properties at the transition temperature (Tt) close to the atmospheric temperature (approximately 340 K). We already reported for VO2 deposition by rf magnetron sputtering using V2O3 or V2O5 targets that VO2 films thicker than 400 nm showed high thermochromic performance, whereas the VO2 films thinner than 200 nm did not show such performance because of their poor crystallinity and off-stoichiometry. In this study, very thin thermochromic VO2 films with thicknesses of about 50 nm were successfully deposited using highly < 001>-preferred oriented ZnO polycrystalline films as a buffer layer between the VO2 film and glass substrate (VO2/ZnO/glass) because of the heteroepitaxial growth of VO2 polycrystalline films. W-doped VO2 films were also deposited on the ZnO-coated glass substrates (ZnO/glass) by cosputtering. It was confirmed that W doping for thin VO2 films deposited on the ZnO/glass can decrease Tt systematically. Such very thin VO2 films should have high potential for application in “smart windows”.

Theoretical characterisation of highly efficient dye-sensitised solar cells

NASA Astrophysics Data System (ADS)

Shalabi, A. S.; El Mahdy, A. M.; Assem, M. M.; Taha, H. O.; Abdel Halim, W. S.

2014-01-01

Molecular electronic structure calculations, employing density functional theory (DFT) and time-dependent density functional theory (TD-DFT) methodologies, have been carried out to improve the performance of the synthesised dye YD2-o-C8 which is characterised by 11.9%-12.7% efficiencies. We aimed to narrow the band gap of YD2-o-C8 to extend the light-harvesting region to near-infrared (NIR). This was done by incorporating Cd instead of Zn onto the porphyrin ring and elongating the length of π-conjugation by adding ethynylene link and anthracene unit, so that the performances of the suggested cells could be expected to exceed the 11.9%-12.7% efficiencies with TiO2, ZnO2, and WO3 oxide electrodes. The effects of modifying the central metal and elongating the length of π-conjugation on cell performance are confirmed in terms of frontier molecular orbital (FMO) energy gaps, density of states (DOS), molecular electrostatic potentials (MEPs), non-linear optical (NLO) properties, ultraviolet-visible (UV-vis) electronic absorption, and 1H nuclear magnetic resonance chemical shifts. Increasing the length of π-conjugation of the D-π-A dyes leads to increasing the DOS near Fermi levels, more active NLO performance, strong response to the external electric field, delocalisation of the negative charges near the anchoring groups, deep electron injection, suppressing macrocycle aggregation, active dye regeneration, and inhibited dye recombination. The calculated band gap/eV of the present DMP-Zn is correlated with the experimental (E1/2(oxidation)-E1/2(reduction)/V) potentials of the identical YD2-o-C8. A co-sensitiser is suggested for NIR sensitisation (550-950 nm) to increase the power-to-conversion efficiency beyond 14%.

Suppression and enhancement of deep level emission of ZnO on Si4+ & V5+ substitution

NASA Astrophysics Data System (ADS)

Srivastava, T.; Bajpai, G.; Sen, S.

2018-03-01

ZnO possess a wide range of tunable properties depending on the type and concentration of dopant. Defects in ZnO due to doped aliovalent ions can generate certain functionalities. Such defects in the lattice do not deteriorate the material properties but actually modifies the material towards infinite number of possibilities. Defects like oxygen vacancies play a significant role in photocatalytic and sensing applications. Depending upon the functionality, defect state of ZnO can be modified by suitable doping. Amount and nature of different dopant has different effect on defect state of ZnO. It depends upon the ionic radii, valence state, chemical stability etc. of the ion doped. Two samples with two different dopants i.e., silicon and vanadium, Zn1-xSixO and Zn1-xVxO, for x=0 & 0.020, were synthesized using solgel method (a citric acid-glycerol route) followed by solid state sintering. A comparison of their optical properties, photoluminescence and UV-Vis spectroscopy, with pure ZnO was studied at room temperature. Silicon doping drastically reduces whereas vanadium doping enhances the green emission as compared with pure ZnO. Suppression and enhancement of defect levels (DLE) is rationalized by the effects of extra charge present on Si4+ & V5+ (in comparison to Zn2+) and formation of new hybrid state (V3d O2p) within bandgap. Reduction of defects in Zn1-xSixO makes it suitable material for opto-electronics application whereas enhancement in defects in Zn1-xVxO makes it suitable material for photocatalytic as well as gas sensing application.

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

New metal oxides of the family Am[( TO) q]: ALiMn 3O 4 and ALiZn 3O 4 ( A = K, Rb)

NASA Astrophysics Data System (ADS)

Hoppe, R.; Seipp, E.; Baier, R.

1988-01-01

The new compounds KLiMn 3O 4 ( I), RbLiMn 3O 4 ( II), KLiZn 3O 4 ( III) and RbLiZn 3O 4 ( IV) have been prepared by solid state reaction of A2O ( A = K, Rb), Li 2O, and MO ( M = Mn, Zn). The isomorphous compounds are tetragonal, space group {I4}/{m}, Z = 2 , with lattice constants a = 838.32(4) pm, c = 341.88(3) pm for I; a = 840.66(8) pm, c = 344.85(4) pm for II; a = 819.27(9) pm, c = 334.20(7) pm for III,a = 823.62(9) pm, c = 339.73(7) pm for IV, as determined from Guinier X-ray powder patterns. The orange-colored manganates and colorless zincates are sensitive to moisture. The crystal structures of II and III have been determined by single-crystal X-ray techniques and refined to R = 0.09 ( II) and R = 0.06 ( III). The structure is built up from chains of face-shared cubes, 1∞[A O{8}/{2}] (A = K, Rb) , running parallel to the c axis. These are connected by Li + and M2+ ( M = Mn, Zn), statistically distributed on tetrahedral positions between the chains.

Exciton Lines in Luminescence Spectra of NixZn1-xO under Inner Shell Excitation

NASA Astrophysics Data System (ADS)

Churmanov, V. N.; Sokolov, V. I.; Gruzdev, N. B.; Ivanov, V. Yu.; Pustovarov, V. A.

The paper presents the results of the study of two narrow luminescence lines I1 and I2 at the energies of 3.339 and 3.393 eV respectively in NiO and solid state solution Ni0.6Zn0.4O. The luminescence spectroscopy with a sub-nanosecond time resolution upon selective photoexcitation in the energy range of absorption of the inner shells Zn M- and Ni L2,3- edges of Zn- and Ni- ions was used to promote proposed earlier mechanism of origin of luminescence lines I1 and I2. Photoluminescence decay kinetics of NiO and solid state solution Ni0.6Zn0.4O under soft x-ray excitation are discussed. The doublet of I1 and I2 lines is believed to arise due to the radiative annihilation of p-d excitons.

The effect of glass additives on the microwave dielectric properties of Ba(Mg{sub 1/3}Ta{sub 2/3})O{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surendran, K.P.; Mohanan, P.; Sebastian, M.T.

2004-11-01

The effect of glass additives on the densification, phase evolution, microstructure and microwave dielectric properties of Ba(Mg{sub 1/3}Ta{sub 2/3})O{sub 3} (BMT) was investigated. Different weight percentages of quenched glass such as B{sub 2}O{sub 3}, SiO{sub 2}, B{sub 2}O{sub 3}-SiO{sub 2}, ZnO-B{sub 2}O{sub 3}, 5ZnO-2B{sub 2}O{sub 3}, Al{sub 2}O{sub 3}-SiO{sub 2}, Na{sub 2}O-2B{sub 2}O{sub 3}.10H{sub 2}O, BaO-B{sub 2}O{sub 3}-SiO{sub 2}, MgO-B{sub 2}O{sub 3}-SiO{sub 2}, PbO-B{sub 2}O{sub 3}-SiO{sub 2}, ZnO-B{sub 2}O{sub 3}-SiO{sub 2} and 2MgO-Al{sub 2}O{sub 3}-5SiO{sub 2} were added to calcined BMT precursor. The sintering temperature of the glass-added BMT samples were lowered down to 1300 deg. C compared to solid-statemore » sintering where the temperature was 1650{sup o}C. The formation of high temperature satellite phases such as Ba{sub 5}Ta{sub 4}O{sub 15} and Ba{sub 7}Ta{sub 6}O{sub 22} were found to be suppressed by the glass addition. Addition of glass systems such as B{sub 2}O{sub 3}, ZnO-B{sub 2}O{sub 3}, 5ZnO-2B{sub 2}O{sub 3} and ZnO-B{sub 2}O{sub 3}-SiO{sub 2} improved the densification and microwave dielectric properties. Other glasses were found to react with BMT to form low-Q phases which prevented densification. The microwave dielectric properties of undoped BMT with a densification of 93.1% of the theoretical density were {epsilon}r=24.8, {tau}f=8ppm/{sup o}C and Q{sub u}xf=80,000GHz. The BMT doped with 1.0wt% of B{sub 2}O{sub 3} has Q{sub u}xf=124,700GHz, {epsilon}r=24.2, and {tau}f=-1.3ppm/ deg/ C. The unloaded Q factor of 0.2wt% ZnO-B{sub 2}O{sub 3}-doped BMT was 136,500GHz while that of 1.0wt% of 5ZnO-2B{sub 2}O{sub 3} added ceramic was Q{sub u}xf=141,800GHz. The best microwave quality factor was observed for ZnO-B{sub 2}O{sub 3}-SiO{sub 2} (ZBS) glass-added ceramics which can act as a perfect liquid-phase medium for the sintering of BMT. The microwave dielectric properties of 0.2wt% ZBS-added BMT dielectric was Q{sub u}xf=152,800GHz, {epsilon}r=25.5, and {tau}f=-1.5ppm/ deg. C.« less

Origin of Blue-Green Emission in α-Zn2P2O7 and Local Structure of Ln3+ Ion in α-Zn2P2O7:Ln3+ (Ln = Sm, Eu): Time-Resolved Photoluminescence, EXAFS, and DFT Measurements.

PubMed

Gupta, Santosh Kumar; Ghosh, Partha Sarathi; Yadav, Ashok Kumar; Jha, Shambhu Nath; Bhattacharyya, Dibyendu; Kadam, Ramakant Mahadeo

2017-01-03

Considering the fact that pyrophosphate-based hosts are in high demand for making highly efficient luminescence materials, we doped two visible lanthanide ions, viz. Sm 3+ and Eu 3+ , in Zn 2 P 2 O 7 . Interestingly, it was oberved that pure Zn 2 P 2 O 7 displayed blue-green dual emission on irradiation with ultraviolet light. Emission and lifetime spectroscopy shows the presence of defects in pyrophosphate samples which are responsible for such emission. DFT calculations clearly pinpointed that the electronic transitions between defect states located at just below the conduction band minimum (arises due to V O 1+ and V O 2+ defects) and valence band maximum, as well as impurity states situated in the band gap, can lead to dual emission in the blue-green region, as is also indicated by emission and lifetime spectra. X-ray absorption near edge spectroscopy (XANES) shows the stabilization of europium as well as samarium ion in the +3 oxidation state in α-Zn 2 P 2 O 7 . The fact that α-Zn 2 P 2 O 7 has two different coordination numbers for zinc ions, i.e. five- and six-coordinate, the study of dopant ion distribution in this particular matrix will be an important step in realizing a highly efficient europium- and samarium-based red-emitting phosphor. Time resolved photoluminescence (TRPL) shows that both of these ions are heterogeneously distributed between five- and six-coordinated Zn 2+ sites and it is the six-coordinated Zn 2+ site which is the most favorable for lanthanide ion doping. Extended X-ray absorption fine structure (EXAFS) measurements also suggested that a six-coordinated zinc ion is the preferred site occupied by trivalent lanthanide ions, which is in complete agreement with TRPL results. It was observed that there is almost complete transfer of photon energy from Zn 2 P 2 O 7 to Eu 3+ , whereas this transfer is inefficient and almost incomplete in case of Sm 3+ , which is indeed important information for the realization of pyrophosphate-based tunable phosphors.

NASA Astrophysics Data System (ADS)

Yao, Jinhuan; Li, Yanwei; Li, Xuanhai; Le, Shiru

2014-07-01

The geometric structure, electronic structure, and stability of In-substituted ZnFe2O4 (Zn7InFe16O32 and Zn8Fe15InO32) are investigated by the density functional theory at generalized gradient approximation level. Compared with the perfect ZnFe2O4 (Zn8Fe16O32), the unit cell volume of In-substituted ZnFe2O4 increases and the structure deforms slightly. The formation energy of In substitution for Zn is smaller than that of In substitution for Fe, indicating that Zn7InFe16O32 is easier to be formed than Zn8Fe15InO32. In substitution changes the properties of ZnFe2O4 from semiconducting character to metallic character. For ZnFe2O4 and In-substituted ZnFe2O4, the strength of O-Zn bond is stronger than O-Fe bond and both of them have a covalent bond character. The strength of O-In bond is similar to that of O-Zn bond in Zn7InFe16O32, but weaker than O-Fe in Zn8Fe15InO32. In substitution for Zn causes the strength of O-Fe bonds around In atom to weaken. In substitution for Fe causes the strength of O-Zn bonds around In atom to weaken obviously, while the strength of O-Fe bonds strengthen slightly.

Defects in zinc oxide grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Ling, Francis C. C.; Wang, Zilan; Ping Ho, Lok; Younas, M.; Anwand, W.; Wagner, A.; Su, S. C.; Shan, C. X.

2016-01-01

ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4-2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

Electrocatalytic Zinc Composites as the Efficient Counter Electrodes of Dye-Sensitized Solar Cells: Study on the Electrochemical Performances and Density Functional Theory Calculations.

PubMed

Li, Chun-Ting; Chang, Hung-Yu; Li, Yu-Yan; Huang, Yi-June; Tsai, Yu-Lin; Vittal, R; Sheng, Yu-Jane; Ho, Kuo-Chuan

2015-12-30

Highly efficient zinc compounds (Zn3N2, ZnO, ZnS, and ZnSe) have been investigated as low-cost electrocatalysts for the counter electrodes (CE) of dye-sensitized solar cells (DSSCs). Among them, Zn3N2 and ZnSe are introduced for the first time in DSSCs. The zinc compounds were separately mixed with a conducting binder, poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) ( PSS), and thereby four composite films of Zn3N2/PEDOT:PSS, ZnO/PEDOT:PSS, ZnS/PEDOT:PSS, and ZnSe/ PSS were coated on the tin-doped indium oxide (ITO) substrates through a simple drop-coating process. In the composite film, nanoparticles of the zinc compound form active sites for the electrocatalytic reduction of triiodide ions, and PSS provides a continuous conductive matrix for fast electron transfer. By varying the weight percentage (5-20 wt %) of a zinc compound with respect to the weight of the PSS, the optimized concentration of a zinc compound was found to be 10 wt % in all four cases, based on the photovoltaic performances of the corresponding DSSCs. At this concentration (10 wt %), the composites films with Zn3N2 (Zn3N2-10), ZnO (ZnO-10), ZnS (ZnS-10), and ZnSe (ZnSe-10) rendered, for their DSSCs, power conversion efficiencies (η) of 8.73%, 7.54%, 7.40%, and 8.13%, respectively. The difference in the power conversion efficiency is explained based on the electrocatalytic abilities of those composite films as determined by cyclic voltammetry (CV), Tafel polarization plots, and electrochemical impedance spectroscopy (EIS) techniques. The energy band gaps of the zinc compounds, obtained by density functional theory (DFT) calculations, were used to explain the electrocatalytic behaviors of the compounds. Among all the zinc-based composites, the one with Zn3N2-10 showed the best electrocatalytic ability and thereby rendered for its DSSC the highest η of 8.73%, which is even higher than that of the cell with the traditional Pt CE (8.50%). Therefore, Zn3N2 can be considered as a promising inexpensive electrocatalyst to replace the rare and expensive Pt.

Effect of ZnO:Cs2CO3 on the performance of organic photovoltaics

PubMed Central

2014-01-01

We demonstrate a new solution-processed electron transport layer (ETL), zinc oxide doped with cesium carbonate (ZnO:Cs2CO3), for achieving organic photovoltaics (OPVs) with good operational stability at ambient air. An OPV employing the ZnO:Cs2CO3 ETL exhibits a fill factor of 62%, an open circuit voltage of 0.90 V, and a short circuit current density of −6.14 mA/cm2 along with 3.43% power conversion efficiency. The device demonstrated air stability for a period over 4 weeks. In addition, we also studied the device structure dependence on the performance of organic photovoltaics. Thus, we conclude that ZnO:Cs2CO3 ETL could be employed in a suitable architecture to achieve high-performance OPV. PMID:25045340

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

NASA Astrophysics Data System (ADS)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism

NASA Astrophysics Data System (ADS)

Sky, T. N.; Johansen, K. M.; Riise, H. N.; Svensson, B. G.; Vines, L.

2018-02-01

Isochronal and isothermal diffusion experiments of gallium (Ga) in zinc oxide (ZnO) have been performed in the temperature range of 900-1050 °C. The samples used consisted of a sputter-deposited and highly Ga-doped ZnO film at the surface of a single-crystal bulk material. We use a novel reaction diffusion (RD) approach to demonstrate that the diffusion behavior of Ga in ZnO is consistent with zinc vacancy (VZn) mediation via the formation and dissociation of GaZnVZn complexes. In the RD modeling, experimental diffusion data are fitted utilizing recent density-functional-theory estimates of the VZn formation energy and the binding energy of GaZnVZn. From the RD modeling, a migration energy of 2.3 eV is deduced for GaZnVZn, and a total/effective activation energy of 3.0 eV is obtained for the Ga diffusion. Furthermore, and for comparison, employing the so-called Fair model, a total/effective activation energy of 2.7 eV is obtained for the Ga diffusion, reasonably close to the total value extracted from the RD-modeling.

First-principles characterization of native-defect-related optical transitions in ZnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyons, J. L.; Varley, J. B.; Steiauf, D.

We investigate the electrical and optical properties of oxygen vacancies (VO), zinc vacancies (V Zn), hydrogenated V Zn, and isolated dangling bonds in ZnO using hybrid functional calculations. While the formation energy of V O is high in n-type ZnO, indicating that this center is unlikely to form, our results for optical absorption signals associated with V O are consistent with those observed in irradiated samples, and give rise to emission with a peak at less than 1 eV. Under realistic growth conditions, we find that VZn is the lowest-energy native defect in n-type ZnO, acting as an acceptor thatmore » is likely to compensate donor doping. Turning to optical transitions, we first examine N O as a case study, since N-related transitions have been identified in experiments on ZnO. Here, we also examine how hydrogen, often unintentionally present in ZnO, forms stable complexes with V Zn and modifies its optical properties. Compared with isolated V Zn, V Zn-H complexes have charge-state transition levels lower in the band gap as well as have lower formation energies. These complexes also lead to characteristic vibrational frequencies which compare favorably with experiment. Oxygen dangling bonds show behavior mostly consistent with V Zn, while zinc dangling bonds give rise to transition levels near the ZnO conduction-band minimum and emission peaking near 2.4 eV. Lastly, we discuss our results in view of the available experimental literature.« less

First-principles characterization of native-defect-related optical transitions in ZnO

DOE PAGES

Lyons, J. L.; Varley, J. B.; Steiauf, D.; ...

2017-07-21

We investigate the electrical and optical properties of oxygen vacancies (VO), zinc vacancies (V Zn), hydrogenated V Zn, and isolated dangling bonds in ZnO using hybrid functional calculations. While the formation energy of V O is high in n-type ZnO, indicating that this center is unlikely to form, our results for optical absorption signals associated with V O are consistent with those observed in irradiated samples, and give rise to emission with a peak at less than 1 eV. Under realistic growth conditions, we find that VZn is the lowest-energy native defect in n-type ZnO, acting as an acceptor thatmore » is likely to compensate donor doping. Turning to optical transitions, we first examine N O as a case study, since N-related transitions have been identified in experiments on ZnO. Here, we also examine how hydrogen, often unintentionally present in ZnO, forms stable complexes with V Zn and modifies its optical properties. Compared with isolated V Zn, V Zn-H complexes have charge-state transition levels lower in the band gap as well as have lower formation energies. These complexes also lead to characteristic vibrational frequencies which compare favorably with experiment. Oxygen dangling bonds show behavior mostly consistent with V Zn, while zinc dangling bonds give rise to transition levels near the ZnO conduction-band minimum and emission peaking near 2.4 eV. Lastly, we discuss our results in view of the available experimental literature.« less

Perovskite-based solar cells with inorganic inverted hybrid planar heterojunction structure

NASA Astrophysics Data System (ADS)

Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

2018-01-01

We demonstrated the good performance of inorganic inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with glass/ITO/NiOx/CH3NH3PbI3 perovskite/C60/ room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiOx and ZnO, respectively. The inorganic hole and electron transport layer of NiOx and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (VOC), short-circuit current density (JSC), and power conversion efficiency (η%) of the SCs. We obtained inorganic inverted CH3NH3PbI3 perovskite-based SCs with a JSC of 21.96 A/cm2, a VOC of 1.02 V, a fill factor (FF%) of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O2. The inorganic inverted CH3NH3PbI3 perovskite-based SCs demonstrated improved storage reliability.

Zn-Fe-CNTs catalytic in situ generation of H2O2 for Fenton-like degradation of sulfamethoxazole.

PubMed

Liu, Yong; Fan, Qin; Wang, Jianlong

2018-01-15

A novel Fenton-like catalyst (Zn-Fe-CNTs) capable of converting O 2 to H 2 O 2 and further to OH was prepared through infiltration fusion method followed by chemical replacement in argon atmosphere. The catalyst was characterized by SEM, EDS, TEM, XRD and XPS. The reaction between Zn-Fe-CNTs and O 2 in aqueous solution could generate H 2 O 2 in situ, which was further transferred to OH. The Fenton-like degradation of sulfamethoxazole (SMX) using Zn-Fe-CNTs as catalyst was evaluated. The results indicated that Zn-Fe-CNTs had a coral porous structure with a BET area of 51.67m 2 /g, exhibiting excellent adsorption capacity for SMX, which enhanced its degradation. The particles of Zn 0 and Fe 0 /Fe 2 O 3 were observed on the surface of Zn-Fe-CNTs. The mixture of Zn 0 and CNTs could reduce O 2 into H 2 O 2 by micro-electrolysis and Fe 0 /Fe 2 O 3 could catalyze in-situ generation of H 2 O 2 to produce OH through Fenton-like process. When initial pH=1.5, T=25°C, O 2 flow rate=400mL/min, Zn-Fe-CNTs=0.6g/L, SMX=25mg/L and reaction time=10min, the removal efficiency of SMX and TOC was 100% and 51.3%, respectively. The intermediates were detected and the possible pathway of SMX degradation and the mechanism of Zn-Fe-CNTs/O 2 process were tentatively proposed. Copyright © 2017 Elsevier B.V. All rights reserved.

Effect of V2O5 on SrO-ZnO-B2O3-SiO2 glass-ceramics for high temperature sealant application

NASA Astrophysics Data System (ADS)

Tiwari, Babita; Bhatacharya, S.; Dixit, A.; Gadkari, S. C.; Kothiyal, G. P.

2012-06-01

Glasses in the SrO-ZnO-B2O3-SiO2 (SZBS) system with and without V2O5 were prepared by melt-quench method and transformed into glass-ceramics by controlled crystallization. Investigated glasses and glass-ceramics have thermal expansion coefficients (TEC) in the range of 95-120 × 10-7/°C (30-600 °C), which match closely with TEC of other components of solid oxide fuel cell (SOFC). Study of thermo-physical properties of SZBS glasses revealed the network modifying effect of V2O5. Addition of V2O5 increases the TEC and decreases the viscosity of the glass which is beneficial for making seal with Crofer-22-APU. Microstructural investigations have shown good bonding of SZBS glasses with Crofer-22-APU. Elemental line scans indicate that inter-diffusion of Fe, Cr and Si across interface, which is thought to be responsible for good bonding with Crofer-22-APU.

Oxygen and sulfur isotope systematics of sulfate produced during abiotic and bacterial oxidation of sphalerite and elemental sulfur

USGS Publications Warehouse

Balci, N.; Mayer, B.; Shanks, Wayne C.; Mandernack, K.W.

2012-01-01

Studies of metal sulfide oxidation in acid mine drainage (AMD) systems have primarily focused on pyrite oxidation, although acid soluble sulfides (e.g., ZnS) are predominantly responsible for the release of toxic metals. We conducted a series of biological and abiotic laboratory oxidation experiments with pure and Fe-bearing sphalerite (ZnS & Zn 0.88Fe 0.12S), respectively, in order to better understand the effects of sulfide mineralogy and associated biogeochemical controls of oxidation on the resultant ?? 34S and ?? 18O values of the sulfate produced. The minerals were incubated in the presence and absence of Acidithiobacillus ferrooxidans at an initial solution pH of 3 and with water of varying ?? 18O values to determine the relative contributions of H 2O-derived and O 2-derived oxygen in the newly formed sulfate. Experiments were conducted under aerobic and anaerobic conditions using O 2 and Fe(III) aq as the oxidants, respectively. Aerobic incubations with A. ferrooxidans, and S o as the sole energy source were also conducted. The ??34SSO4 values from both the biological and abiotic oxidation of ZnS and ZnS Fe by Fe(III) aq produced sulfur isotope fractionations (??34SSO4-ZnS) of up to -2.6???, suggesting the accumulation of sulfur intermediates during incomplete oxidation of the sulfide. No significant sulfur isotope fractionation was observed from any of the aerobic experiments. Negative sulfur isotope enrichment factors (??34SSO4-ZnS) in AMD systems could reflect anaerobic, rather than aerobic pathways of oxidation. During the biological and abiotic oxidation of ZnS and ZnS Fe by Fe(III) aq all of the sulfate oxygen was derived from water, with measured ?? 18OSO 4-H 2O values of 8.2??0.2??? and 7.5??0.1???, respectively. Also, during the aerobic oxidation of ZnS Fe and S o by A. ferrooxidans, all of the sulfate oxygen was derived from water with similar measured ?? 18OSO 4-H 2O values of 8.1??0.1??? and 8.3??0.3???, respectively. During biological oxidation of ZnS by O 2, an estimated 8% of sulfate-oxygen was derived from O 2, which is enriched in 18O relative to water, thus resulting in a larger apparent ?? 18OSO 4-H 2O value of 9.5???. Based on the data presented we hypothesize that the similar ?? 18OSO 4-H 2O values of ~8??? from all of the aerobic and anaerobic experiments result from a common rate-limiting step that involves oxygen isotopic exchange between a sulfite (SO3-) intermediate and H 2O. Our results indicate that the ??18OSO4 values cannot be used to distinguish biological and abiotic, nor aerobic versus anaerobic, pathways of sphalerite oxidation. However, the ?? 18OSO 4-H 2O values of ~8??? measured here are distinctly higher than ?? 18OSO 4-H 2O values of ~4??? previously reported for pyrite oxidation indicating the influence of sulfide mineralogy on measured ?? 18OSO 4 values. ?? 2011 Elsevier Ltd.

Optical basicity and polarizability for copper-zinc doped sol-gel glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaur, G., E-mail: gkapds@gmail.com; Pandey, O. P.; Amjotkaur,, E-mail: amjotkaur93@gmail.com

2016-05-06

CaO-SiO{sub 2}-B{sub 2}O{sub 3}-P{sub 2}O{sub 5} glasses have been studied by varying ratios of Copper oxide and Zinc oxide. Glasses were prepared using Sol-Gel technique. Opitical Basicity and oxide ion Polarizability were calculated and discussed in relation with non bridging Oxygen ions (NBOs). Optical basicity is average electron donating capability of an oxide atom. All glasses had a little difference in optical basicity and polarizability values but CZ8 glass (20CaO-60SiO{sub 2}-5B{sub 2}O{sub 3}-5P{sub 2}O{sub 5}-2CuO-8ZnO) came out to show highest optical basicity and polarizability with value 0.5177 and 0.9798 respectively. This showed the highest electron donating tendency of CZ8 glassmore » and highest number of NBOs. These were minimum for CZ2 glass with 8CuO and 2ZnO. In aspect of optical basicity and polarizability glasses follow the series CZ2 < CZ4 < CZ6 < CZ8. Increasing concentration of ZnO and decreasing concentration of CuO lead to higher optical basicity and oxide ion polarizability.« less

Blue light emission from ZnO-graphene hybrid quantum dot (Conference Presentation)

NASA Astrophysics Data System (ADS)

Choi, Won Kook; Kim, Hong Hee; Park, Cheolmin; Hwang, Do Kyung; Lee, Yeonju

2017-03-01

One of a wide-bandgap semiconductor, Zinc oxide (ZnO) has a near ultraviolet bandgap (3.37 eV) and an exciton binding energy of 60 meV at room temperature (RT), and has several favorable properties, such as high electron mobility, high oscillator strength, and good transparency. In the photoluminescence (PL) spectra of ZnO nanoparticles, the near band edge ultraviolet (UV) emission at 378 nm relevant to direct bandgap of ZnO, and blue light emissions centered at 410, 435, and 465 nm corresponding to Zn interstitial (Zni) to valence band maximum (VBM), and to Zn vacancies (VZn) and green light emission at 540 nm corresponding to conduction band maximum (CBM) to oxygen vacancy (Vo). Ultra-small size quasi consolidated ZnO-graphene nanoparticles was synthesized in which graphene outer layer was chemically attached with ZnO inner core. After attaching graphene to ZnO, green emission completely disappeared whereas the intensity of blue emission was greatly increased. Enhanced blue emission could be well described by both fast electron transfer from CBM of ZnO to graphene having similar molecular energy level with Zni and transition to VBM and Vzn. Glass/ITO/PEDOT:PSS/poly-TPD/ZnO-graphene/Cs2CO3/Al were fabricated and showed the blue emission centered at 435 nm with FWHM of about 90 nm.

Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

NASA Astrophysics Data System (ADS)

AlHammad, M. S.

2017-05-01

We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.

ZIF-8 derived hexagonal-like α-Fe2O3/ZnO/Au nanoplates with tunable surface heterostructures for superior ethanol gas-sensing performance

NASA Astrophysics Data System (ADS)

Chen, Ying; Li, Hui; Ma, Qian; Che, Quande; Wang, Junpeng; Wang, Gang; Yang, Ping

2018-05-01

A series of hexagonal-like α-Fe2O3/ZnO/Au nanoplate heterostructures with tunable morphologies and superior ethanol gas-sensing performance were successfully synthesized via the facile multi-step reaction processes. Hexagonal-like α-Fe2O3 nanoplates with uniform size around 150 nm are employed as new sensor substrates for loading the well-distributed ZnO and Au nanoparticles with adjustable size distribution on the different surfaces. Brunauer-EmmeQ-Teller (BET) surface areas of α-Fe2O3 and α-Fe2O3/ZnO samples are evaluated to be 37.94 and 61.27 m2/g, respectively, while α-Fe2O3/ZnO/Au composites present the highest value of 79.08 m2/g. These α-Fe2O3-based functional materials can exhibit outstanding sensing properties to ethanol. When the ethanol concentration is 100 ppm, the response value of α-Fe2O3/ZnO/Au composites can reach up to 170, which is 14.6 and 80.3 times higher than that of α-Fe2O3/ZnO and pure α-Fe2O3, respectively. The recycling stability and long-time effectiveness can be availably maintained within 30 days, as well as the response and recovery times are shortened to 4 and 5 s, respectively. Significantly, the response value of α-Fe2O3/ZnO/Au composite is still up to 63 at an operating temperature of 280 °C even though the ethanol concentration decreases to 10 ppm. The enhanced gas sensing mechanism would be focused on the synergistic effects of phase compositions, surface heterogeneous structures, large specific surface area, and the selective depositions of Au nanoparticles in α-Fe2O3/ZnO/Au sensors. The synergistic effect of different surface heterostructures referring to α-Fe2O3/Au and α-Fe2O3/ZnO/Au and their novel electron transport processes on the surfaces are first investigated and discussed in details. It is expected that hexagonal-like α-Fe2O3/ZnO/Au nanoplate heterostructures with excellent sensing performance can be the promising highly-sensitive materials in the actual application for monitoring and detecting ethanol.

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

NASA Astrophysics Data System (ADS)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

High-K (Ba0.8Bi0.2)(Zn0.1Ti0.9)O3 ceramics for high-temperature capacitor applications.

PubMed

Raengthon, Natthaphon; Cann, David P

2011-09-01

Solid solutions of BaTiO(3)-Bi(Zn(1/2)Ti(1/2))O(3) were investigated for high-temperature capacitor applications. Compositions close to 0.8BaTiO(3)-0.2Bi(Zn(1/2)Ti(1/2))O(3) revealed pseudo-cubic symmetry and showed a linear dielectric response. The existence of a nearly flat temperature dependence of the relative permittivity over the temperature range of 100 to 350°C was also obtained. In this study, the effects of cation non-stoichiometry and doping were investigated in an attempt to optimize the insulation resistance for high-temperature applications. The dielectric response of (Ba(0.8)-xBi(0.2))(Zn(0.1)Ti(0.9)) O(3) ceramics where 0 ≤ X ≤ 0.08, as well as ZrO2- and Mn(2)O(3)-doped ceramics were studied. The optimum compositions exhibited a relative permittivity in excess of 1150 with a low loss tangent (tan δ < 0.05) that persisted up to a temperature of 460δC. The temperature dependence of resistivity also revealed the improved insulation resistance of Ba-deficient compositions. Additionally, we suggest that an ionic conduction mechanism is responsible for the degradation of resistivity at high temperatures. The temperature coefficient of permittivity ((τ)K) and the RC time constant were also investigated.

Structural and electrical properties of TiO{sub 2}/ZnO core–shell nanoparticles synthesized by hydrothermal method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlazan, P.; Ursu, D.H.; Irina-Moisescu, C.

TiO{sub 2}/ZnO core–shell nanoparticles were successfully synthesized by hydrothermal method in two stages: first stage is the hydrothermal synthesis of ZnO nanoparticles and second stage the obtained ZnO nanoparticles are encapsulated in TiO{sub 2}. The obtained ZnO, TiO{sub 2} and TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of X-ray diffraction, transmission electron microscopy, Brunauer, Emmett, Teller and resistance measurements. X-ray diffraction analysis revealed the presence of both, TiO{sub 2} and ZnO phases in TiO{sub 2}/ZnO core–shell nanoparticles. According to transmission electron microscopy images, ZnO nanoparticles have hexagonal shapes, TiO{sub 2} nanoparticles have a spherical shape, and TiO{sub 2}/ZnO core–shellmore » nanoparticles present agglomerates and the shape of particles is not well defined. The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about 101 meV. - Graphical abstract: Display Omitted - Highlights: • TiO{sub 2}/ZnO core–shell nanoparticles were synthesized by hydrothermal method. • TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of XRD, TEM and BET. • Electrical properties of TiO{sub 2}/ZnO core–shell nanoparticles were investigated. • The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about E{sub a} = 101 meV.« less

High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, M. M.; State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, 130033 Changchun; Liu, K. W., E-mail: liukw@ciomp.ac.cn, E-mail: shendz@ciomp.ac.cn

High Mg content mixed-phase Zn{sub 0.38}Mg{sub 0.62}O was deposited on a-face sapphire by plasma-assisted molecular beam epitaxy, based on which a metal-semiconductor-metal solar-blind ultraviolet (UV) photodetector was fabricated. The dark current is only 0.25 pA at 5 V, which is much lower than that of the reported mixed-phase ZnMgO photodetectors. More interestingly, different from the other mixed-phase ZnMgO photodetectors containing two photoresponse bands, this device shows only one response peak and its −3 dB cut-off wavelength is around 275 nm. At 10 V, the peak responsivity is as high as 1.664 A/W at 260 nm, corresponding to an internal gain of ∼8. The internal gain is mainlymore » ascribed to the interface states at the grain boundaries acting as trapping centers of photogenerated holes. In view of the advantages of mixed-phase ZnMgO photodetectors over single-phase ZnMgO photodetectors, including easy fabrication, high responsivity, and low dark current, our findings are anticipated to pave a new way for the development of ZnMgO solar-blind UV photodetectors.« less

SHI irradiation effect on pure and Mn doped ZnO thin films

NASA Astrophysics Data System (ADS)

Khawal, H. A.; Raskar, N. D.; Dole, B. N.

2017-05-01

Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components

NASA Astrophysics Data System (ADS)

Liu, Lishu; Mei, Zengxia; Hou, Yaonan; Liang, Huili; Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Kuznetsov, Andrej; Du, Xiaolong

2015-10-01

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 1019 F/cm3.The dramatically increased carrier concentration (2.85 × 1017 cm-3 vs ~1014 cm-3) and decreased resistivity (129 Ω · cm vs ~106 Ω cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89 × 109 cm Hz1/2/W to 3.58 × 1010 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.

Optical properties of P ion implanted ZnO

NASA Astrophysics Data System (ADS)

Pong, Bao-Jen; Chou, Bo-Wei; Pan, Ching-Jen; Tsao, Fu-Chun; Chi, Gou-Chung

2006-02-01

Red and green emissions are observed from P ion implanted ZnO. Red emission at ~680 nm (1.82 eV) is associated with the donor-acceptor pair (DAP) transition, where the corresponding donor and acceptor are interstitial zinc (Zn i) and interstitial oxygen (O i), respectively. Green emission at ~ 516 nm (2.40 eV) is associated with the transition between the conduction band and antisite oxygen (O Zn). Green emission at ~516nm (2.403 eV) was observed for ZnO annealed at 800 oC under ambient oxygen, whereas, it was not visible when it was annealed in ambient nitrogen. Hence, the green emission is most likely not related to oxygen vacancies on ZnO sample, which might be related to the cleanliness of ZnO surface, a detailed study is in progress. The observed micro-strain is larger for N ion implanted ZnO than that for P ion implanted ZnO. It is attributed to the larger straggle of N ion implanted ZnO than that of P ion implanted ZnO. Similar phenomenon is also observed in Be and Mg ion implanted GaN.

In vitro toxicity of zinc oxide nanoparticles: a review

NASA Astrophysics Data System (ADS)

Pandurangan, Muthuraman; Kim, Doo Hwan

2015-03-01

The toxic effect of ZnO nanoparticles is due to their solubility. ZnO nanoparticles dissolve in the extracellular region, which in turn increases the intracellular [Zn2+] level. The mechanism for increased intracellular [Zn2+] level and ZnO nanoparticles dissolution in the medium is still unclear. Cytotoxicity, increased oxidative stress, increased intracellular [Ca2+] level, decreased mitochondrial membrane potential, and interleukin-8 productions occur in the BEAS-2B bronchial epithelial cells and A549 alveolar adenocarcinoma cells following the exposure of ZnO nanoparticles. Confluent C2C12 cells are more resistant to ZnO nanoparticles compared to the sparse monolayer. Loss of 3T3-L1 cell viability, membrane leakage, and morphological changes occurs due to exposure of ZnO nanoparticles. ZnO nanoparticle induces cytotoxicity and mitochondrial dysfunction in RKO colon carcinoma cells. The occurrence of apoptosis, increased ROS level, reduced mitochondrial activity and formation of tubular intracellular structures are reported following exposure of ZnO nanoparticles in skin cells. Macrophages, monocytes, and dendritic cells are affected by ZnO nanoparticles. In addition, genotoxicity is also induced. The present review summarizes the literature on in vitro toxicity of ZnO nanoparticles (10-100 nm) on various cell lines.

Zn3Sb4O6F6: Hydrothermal synthesis, crystal structure and nonlinear optical properties

NASA Astrophysics Data System (ADS)

Ali, Sk Imran; Zhang, Weiguo; Halasyamani, P. Shiv; Johnsson, Mats

2017-12-01

Zn3Sb4O6F6 has been synthesized hydrothermally at 230 °C. The crystal structure was determined from single crystal X-ray diffraction data. It crystallizes in the cubic non-centrosymmetric space group I-43m with the unit cell parameter a = 8.1291(4) Å and is isostructural with M3Sb4O6F6 (M = Co, Ni). The new compound is the first oxofluoride containing Zn2+ and a p-element cation with a stereochemically active lone pair. The crystal structure is made up by [ZnO2F4] octahedra forming a network via corner sharing at F-atoms and [SbO3] trigonal pyramids that form [Sb4O6] cages that connect via the O-atoms to the Zn-atoms. Powder second-harmonic generation (SHG) measurements using 1064 nm radiation on Zn3Sb4O6F6 indicate an SHG intensity of approximately 40 × α-SiO2.

A multifunctional Schiff base as a fluorescence sensor for Fe3 + and Zn2 + ions, and a colorimetric sensor for Cu2 + and applications

NASA Astrophysics Data System (ADS)

Tang, Xu; Han, Juan; Wang, Yun; Ni, Liang; Bao, Xu; Wang, Lei; Zhang, Wenli

2017-02-01

Chemosensors play important parts in the selective recognition of ions, which is widely applied in various fields of environment, industry and biological sciences. In this work, a chemosensor for multi-metal ions based on rhodamine B derivative was synthesized, which could selectively recognize various metal ions in different solvent system. The addition of Cu2 + caused the color change from colorless to pink in EtOH/H2O (v/v = 1:1) solvent system, which could be quickly identified by the naked eyes with a detection limit of 8.27 × 10- 8 M. In ethanol solution system, the addition of Fe3 + and Zn2 + caused different fluorescence changes with the detection limit of 2.12 × 10- 7 M and 6.64 × 10- 7 M respectively. The binding ratios are 1:1 (1-Cu2 +), 2:1 (1-Fe3 +) and 1:1 (1-Zn2 +), respectively. Meanwhile, the probe 1 was used to detect the trace metal ions in real water samples. Besides, the probe 1 showed sensitive fluorescence signals for Fe3 + in biological cells. The experimental results further verify the application value of the sensor.

Structural, morphological, optical and electrical properties of Schottky diodes based on CBD deposited ZnO:Cu nanorods

NASA Astrophysics Data System (ADS)

Mwankemwa, Benard S.; Legodi, Matshisa J.; Mlambo, Mbuso; Nel, Jackie M.; Diale, Mmantsae

2017-07-01

Undoped and copper doped zinc oxide (ZnO) nanorods have been synthesized by a simple chemical bath deposition (CBD) method at a temperature of 90 °C. Structural, morphological, optical and electrical properties of the synthesized ZnO nanorods were found to be dependent on the Cu doping percentage. X-ray diffraction (XRD) patterns revealed strong diffraction peaks of hexagonal wurtzite of ZnO, and no impurity phases from metallic zinc or copper. Scanning electron microscopy (SEM) images showed changes in diameter and shape of nanorods, where by those doped with 2 at.% and 3 at.% aggregated and became compact. Selected area electron diffraction (SAED) patterns indicates high quality, single crystalline wurtzite structure ZnO and intensities of bright spots varied with copper doping concentration. UV-visible absorption peaks of ZnO red shifted with increasing copper doping concentration. Raman studies demonstrated among others, strong and sharp E2 (low) and E2 (high) optical phonon peaks confirming crystal structure of ZnO. Current-voltage measurements based on the gold/ZnO nanorods/ITO showed good rectifying behavior of the Schottky diode. The predicted Schottky barrier height of 0.60 eV was obtained which is not far from the theoretical Schottky-Mott value of 0.80 eV.

The investigation of the Cr doped ZnO thin films deposited by thermionic vacuum arc technique

NASA Astrophysics Data System (ADS)

Mohammadigharehbagh, Reza; Pat, Suat; Musaoglu, Caner; Korkmaz, Şadan; Özen, Soner

2018-02-01

Cr doped ZnO thin films were prepared onto glass and polyethylene terephthalate (PET) substrates using thermionic vacuum arc. XRD patterns show the polycrystalline nature of the films. Cr, Zn, ZnO and Cr2O3 were detected in the layers. The mean crystallite sizes of the films were calculated about 20 nm for the films onto glass and PET substrates. The maximum dislocation density and internal strain values of the films are calculated. According to the optical analysis, the average transmittance and reflectance of the films were found to be approximately 53% and 16% for glass and PET substrates, respectively. The mean refractive index of the layer decreased to 2.15 from 2.38 for the PET substrate. The band gap values of the Cr-doped ZnO thin films were determined as 3.10 and 3.13 eV for glass and PET substrates.

Synthesis and characterization of ZnO:TiO2 nano composites thin films deposited on glass substrate by sol-gel spray coating technique

NASA Astrophysics Data System (ADS)

Sutanto, Heri; Nurhasanah, Iis; Hidayanto, Eko; Wibowo, Singgih; Hadiyanto

2015-12-01

In this work, (ZnO)x:(TiO2)1-x nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol-gel spray coating technique onto glass substrate. Pure TiO2 and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO2 and ZnO:TiO2 thin films at different composition have been investigated. Ultraviolet - Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employed in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO2 on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.

Synthesis and characterization of ZnO:TiO{sub 2} nano composites thin films deposited on glass substrate by sol-gel spray coating technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutanto, Heri, E-mail: herisutanto@undip.ac.id; Nurhasanah, Iis; Hidayanto, Eko

In this work, (ZnO){sub x}:(TiO{sub 2}){sub 1-x} nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol–gel spray coating technique onto glass substrate. Pure TiO{sub 2} and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO{sub 2} and ZnO:TiO{sub 2} thin films at different composition have been investigated. Ultraviolet – Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employedmore » in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO{sub 2} on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.« less

Concentration specific and tunable photoresponse of bismuth vanadate functionalized hexagonal ZnO nanocrystals based photoanodes for photoelectrochemical application

NASA Astrophysics Data System (ADS)

Singh, Sonal; Ruhela, Aakansha; Rani, Sanju; Khanuja, Manika; Sharma, Rishabh

2018-02-01

In the present work, dual layer BiVO4/ZnO photoanode is instigated for photo-electrochemical (PEC) water splitting applications. Two different photocatalytic layers ZnO and BiVO4, reduces charge carrier recombination and charge transfer resistance at photoanode/electrolyte junction. The concentration-specific, tunable and without 'spike and overshoot' features, photocurrent density response is originated by varying BiVO4 concentration in the BiVO4/ZnO photoanode. The crystal structure of ZnO (hexagonal wurtzite structure) and BiVO4 (monoclinic scheelite structure) is confirmed by X-ray diffraction studies. The band gap of BiVO4/ZnO was estimated to be ca. 2.42 eV through Kubler-Munk function F(R∞) using diffuse reflectance spectroscopy. Electrochemical behavior of samples was analyzed with photocurrent measurements, electrochemical impedance, Mott-Schottky plots, bulk separation efficiency and surface transfer efficiency. The maximum photocurrent density of BiVO4/ZnO photoanode was found to be 2.3 times higher than pristine ZnO sample.0.038 M BiVO4/ZnO exhibited the highest separation efficiency of 72% and surface transfer efficiency of 64.7% at +1.23 V vs. RHE. Mott-Schottky study revealed the maximum charge carrier density in the same sample.

Determination of Carrier Lifetimes in Organic-Inorganic Hybrid Solar Cells Based on Sb2S3 by Using the Time-Resolved Photocurrent

NASA Astrophysics Data System (ADS)

Jo, Hyun-Jun; Mun, Young Hee; Kim, Jong Su; Kim, Seung Hyun; Lee, Sang-Ju; Sung, Shi-Joon; Kim, Dae-Hwan

2018-03-01

This paper presents organic-inorganic hybrid solar cells (SCs) based on ZnO/Sb2S3/P3HT heterojunctions. The ZnO and the Sb2S3 layers were grown using atomic layer deposition (ALD). Although four cells were fabricated on one substrate by using the same process, their open-circuit voltages ( V OC ) and short-circuit current densities ( J SC ) were different. The SC with a high V OC has a low J SC . The causes of the changes in the V OC and the JSC were investigated by using photoluminescence (PL) spectroscopy and optically-biased time-resolved photocurrent (TRPC) measurements. The PL results at 300 K showed that the emission positions of the Sb2S3 layers in all cells were similar at approximately 1.71 eV. The carrier lifetime of the SCs was calculated from the TRPC results. The lifetime of cell 4 with the highest J SC decreased drastically with increasing intensity of the continuous-wave optical bias beam. Therefore, the defect states in the ZnO layer contribute to the J SC , but degrade the V OC .

A study on the grindability of portland cement clinker containing transition metal oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsivilis, S.; Kakali, G.

1997-05-01

The subject of this paper is to investigate the effect of transition metal oxides on the grindability of clinker. As it is concluded clinker containing ZnO has the lower grindability while clinker containing MnO or Cr{sub 2}O{sub 3} has the higher grindability. The classification of the added oxides, concerning the clinker grindability (descending sort), is: MnO, Cr{sub 2}O{sub 3}, Ni{sub 2}O{sub 3}, ZrO{sub 2}, CuO, Co{sub 2}O{sub 3}, V{sub 2}O{sub 5}, MoO{sub 3}, TiO{sub 2}, ZnO. The study of the clinker by means of X-Ray diffraction and optical microscopy confirms the results.

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

NASA Astrophysics Data System (ADS)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

Low temperature magnetization and anomalous high temperature dielectric behaviour of (1-x) YMnO3/xZnFe2O4 composites

NASA Astrophysics Data System (ADS)

Kumar, Virendra; Gaur, Anurag

2018-04-01

We synthesized YMnO3 and ZnFe2O4 composites, (1-x)YMnO3/x(ZnFe2O4) with x = 0, 0.05, 0.10, and 0.15 by high temperature sintering. X-ray diffraction (XRD) patterns indicate the successful formation of composites. Weak ferromagnetism is manifested below Néel temperature (TN) for pristine YMnO3, according to (M-H) study performed at 10 K. For (1-x)YMnO3/xZnFe2O4 (x = 0.05, 0.10, 0.15) a thin coercivity is observed in all compositions, due to short range magnetic ordering at low temperature after the insertion of ZnFe2O4. For pristine YMnO3 explicit divarication between FC-ZFC curves is observed, with crimps observed in both FC and ZFC curves at 75 K, which is the TN of YMnO3. For 1-x(YMnO3)/x ZnFe2O4 composites (x = 0.05, 0.10, 0.15) crimps are perceived only in ZFC curves at slightly varying values of 39.8, 42.32 and 45.63 K respectively. Anomalous peaks are observed in high temperature dielectric curves above 400 K for 1-x(YMnO3)/xZnFe2O4 (x = 0, 0.05, 0.10, 0.15) composites due to Maxwell-Wagner relaxation effect.

UV-light-assisted ethanol sensing characteristics of g-C3N4/ZnO composites at room temperature

NASA Astrophysics Data System (ADS)

Zhai, Jiali; Wang, Tao; Wang, Chuang; Liu, Dechen

2018-05-01

A highly efficient UV-light-assisted room temperature sensor based on g-C3N4/ZnO composites were prepared by an in situ precipitation method. The thermostability, composition, structure, and morphology properties of the as-prepared g-C3N4/ZnO composites were characterized by TGA, XRD, FT-IR, TEM, and XPS, respectively. And then, we studied the ethanol (C2H5OH) sensing performance of the g-C3N4/ZnO composites at the room temperature. Compared with pure ZnO and g-C3N4, the gas sensing activity of g-C3N4/ZnO composites was greatly improved at room temperature, for example, the g-C3N4/ZnO-8% composites showed an obvious response of 121-40 ppm C2H5OH at room temperature, which was 60 times higher than the pure ZnO based on the sensors under the same condition. The great enhancement of the C2H5OH sensing properties of composites can be understood by the efficient separation of photogenerated charge carriers of g-C3N4/ZnO heterogeneous and the UV-light catalytic effect. Finally, a possible mechanism for the gas sensing activity was proposed.

Effect of zinc-borate glass addition on the thermal properties of the cordierite/Al2O3 composites containing nano-sized spinel crystal.

PubMed

Jo, Sinae; Kang, Seunggu

2013-11-01

Low-melting zinc-borate glass was added to the cordierite/Al2O3 composite in order to improve the sintering facility of Al2O3 and formation of nano-sized spinel crystal of high thermal conductivity. Increasing the ZnO/B2O3 ratio in the zinc-borate glass increased the ZnAl2O4 spinel and decreased the Al4B2O9 crystal peak intensities in X-ray diffraction pattern. The XRD peak intensities of the ZnAl2O4 spinel and Al4B2O9 crystals in the specimen containing 10 wt% zinc-borate glass (10G series) are higher than that of the specimen containing 5 wt% zinc-borate glass (5G series). The microstructures of most 10G series specimens had the flower-shaped crystal which was composed of 50 nm wide and 250 nm long needle-like crystals and identified as ZnAl2O4 spinel phase. The thermal conductivity of the 10G series specimen was higher than that of the 5G series in any ZnO/B2O3 ratio due to the formation of plenty of nano-sized ZnAl2O4 spinel of high thermal conductivity. Particularly, the thermal conductivity of the cordierite/Al2O3 composite containing 10 wt% zinc-borate glass of ZnO/B2O3 weight ratio = 1.5 was 3.8 W/Km which is much higher than that of the published value (3.0 W/Km).

Effects of complexing agents on electrochemical deposition of FeS x O y in ZnO/FeS x O y heterostructures

NASA Astrophysics Data System (ADS)

Supee, A.; Ichimura, M.

2017-12-01

Heterostructures which consist of ZnO and FeS x O y were deposited via electrochemical deposition (ECD) for application to solar cells. Galvanostatic ECD was used in FeS x O y deposition with a solution containing 100 mM Na2S2O3 and 30 mM FeSO4. To alter the film properties, L(+)-tartaric acid (C4H6O6) and lactic acid [CH3CH(OH)COOH] were introduced as the complexing agents into the FeS x O y deposition solution. Larger film thickness and smaller oxygen content were obtained for the films deposited with the complexing agents. ZnO was deposited on FeS x O y by two-step pulse ECD from a solution containing Zn(NO3)2. For the ZnO/FeS x O y heterostructures fabricated with/without complexing agents, rectifying properties were confirmed in the current density-voltage ( J- V) characteristics. However, photovoltaic properties were not improved with addition of both complexing agents.

ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

David P. Norton; Stephen Pearton; Fan Ren

2007-09-30

By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg formore » higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.« less

Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

NASA Astrophysics Data System (ADS)

Rahal, Hassiba; Kihal, Rafiaa; Affoune, Abed Mohamed; Ghers, Mokhtar; Djazi, Faycal

2017-06-01

Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 °C. The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at -0.60 V vs. SCE and characterized by XRD, SEM, FTIR, optical, photoelectrochemical and electrical measurements. Thickness of the deposited film was measured to be 357 nm. X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along (002) plane. FTIR results confirmed the presence of ZnO films at peak 558 cm-1. SEM images showed uniform, compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape. Optical properties of ZnO reveal a high optical transmission (> 80 % ) and high absorption coefficient (α > {10}5 {{cm}}-1) in visible region. The optical energy band gap was found to be 3.28 eV. Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction. Electrical properties of ZnO films showed a low electrical resistivity of 6.54 {{Ω }}\\cdot {cm}, carrier concentration of -1.3× {10}17 {{cm}}-3 and mobility of 7.35 cm2 V-1 s-1. Project supported by the Algerian Ministry of Higher Education and Scientific Research, Algeria (No. J0101520090018).

Effect of annealing temperature on antimicrobial and structural properties of bio-synthesized zinc oxide nanoparticles using flower extract of Anchusa italica.

PubMed

Azizi, Susan; Mohamad, Rosfarizan; Bahadoran, Azadeh; Bayat, Saadi; Rahim, Raha Abdul; Ariff, Arbakariya; Saad, Wan Zuhainis

2016-08-01

The use of nontoxic biological compounds in the synthesis of nanomaterials is an economic and eco-friendly approach. The present work was undertaken to develop zinc oxide nanoparticles (ZnO-NPs) by a green method using simple precursor from the solution consisting of zinc acetate and the flower extract of Anchusa italica (A. italica). Effect of annealing temperature on structural and antimicrobial properties was investigated. The crystalline structure of ZnO-NPs was shown using X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) results showed that ZnO-NPs are hexagonal in shapes with mean particle size of ~8 and ~14nm at 100°C and 200°C annealing temperatures respectively. The optical band gap was increased from 3.27eV to 3.30eV with the decreasing of the particle size. The antimicrobial activity of ZnO-NPs towards Gram positive (Bacillus megaterium and Stapphylococcus aureus) and Gram negative (Escherichia coli and Salmonella typhimurium) pathogens decreased with the increasing of the heat treating temperature. In vitro cytotoxicity studies on Vero cells, a dose dependent toxicity with non-toxic effect of concentration below 142μg/mL was shown. The results indicated that A. italica is an appropriate reaction media to prepare ZnO-NPs for cosmetic and bio-medical productions. Copyright © 2016 Elsevier B.V. All rights reserved.

Assembly of a basket-like {Sr ⊂ P6Mo18O73} cage from 0D dimmer to 2D network and its photo-/electro-catalytic properties.

PubMed

Zhang, He; Lv, Jing-Hua; Yu, Kai; Wang, Chun-mei; Wang, Chun-xiao; Sun, Di; Zhou, Bai-bin

2015-07-28

A series of basket-like heteropoly blues, formulated as (H4bth)[{Cu(H2O)}2{Sr ⊂ P6MoV2MoVI16O73}]·4H2O (1), {H2bih}3[{FeII(H2O)2}{Sr ⊂ P6MoV2MoVI16O73}]·2H2O (2), (H2bih)3[{CoII(H2O)2}{Sr ⊂ P6MoV2MoVI16O73}]·2H2O (3), (H2bih)3[{NiII(H2O)2}{Sr ⊂ P6MoV2MoVI16O73}]·2H2O (4), (H2bih)2(H2bip)[{Zn (H2O)0.5}{Sr ⊂ P6MoV2MoVI16O73}]·5.5H2O (5), (bth = 1,6-bis(triazole)hexane; bih = 1,6-bis(imidazol)hexane; bip = 1,5-bis(imidazol)pentane) have been synthesized hydrothermally and fully characterized. The structural analysis shows that all the compounds contain two electron reduced polyanions [Sr ⊂ P6MoV2MoVI16O73]8− (abbreviated as {P6Mo18O73}), which consists of a tetra vacant γ-Dawson-type{P2Mo14} unit and a “handle”-shaped {P4Mo4} segment encapsulating a Sr2+ cation in the central cavity. Compound 1 is a 6-connected two-dimensional (2D) layer, which represents the first 2D assembly of basket-type polyoxometalates. Compounds 2–4 are isostructural one-dimensional zigzag chains linked by an M(H2O)2 linker (M = iron for 2, cobalt for 3, and nickel for 4). Compound 5 is a dimeric cluster supported by a binuclear {Zn2(H2O)} unit. The optical band gaps of 1–5 reveal their semiconductive natures. The compounds if used as photocatalysts exhibit a universal high efficiency degradation ability for dyes such as methylene blue, Rhodamine B, and Azon phloxine. The lifetime and reaction mechanism of the catalysts were investigated with a series of experiments. The compounds also show good bifunctional electrocatalytic behavior for the oxidation of ascorbic acid (AA) and reduction of nitrite ions.

Nanostructured GdxZn1-xO thin films by nebulizer spray pyrolysis technique: Role of doping concentration on the structural and optical properties

NASA Astrophysics Data System (ADS)

Mariappan, R.; Ponnuswamy, V.; Suresh, P.; Suresh, R.; Ragavendar, M.

2013-07-01

Nanostructured GdxZn1-xO thin films with different Gd concentration from 0% to 10% deposited at 400 °C using the NSP technique. The films were characterized by structural, surface and optical properties, respectively. X-ray diffraction analysis shows that the Gd doped ZnO films have lattice parameters a = 3.2497 Å and c = 5.2018 Å with hexagonal structure and preferential orientation along (0 0 2) plane. The estimated values compare well with the standard values. When film thickness increases from 222 to 240 nm a high visible region transmittance (>70%) is observed. The optical band gap energy, optical constants (n and k), complex dielectric constants (ɛr and ɛi) and optical conductivities (σr and σi) were calculated from optical transmittance data. The optical band gap energy is 3.2 eV for pure ZnO film and 3.6 eV for Gd0.1Zn0.9O film. The PL studies confirm the presence of a strong UV emission peak at 399 nm. Besides, the UV emission of ZnO films decreases with the increase of Gd doping concentration correspondingly the ultra-violet emission is replaced by blue and green emissions.

A vanadium-doped ZnO nanosheets-polymer composite for flexible piezoelectric nanogenerators

NASA Astrophysics Data System (ADS)

Shin, Sung-Ho; Kwon, Yang Hyeog; Lee, Min Hyung; Jung, Joo-Yun; Seol, Jae Hun; Nah, Junghyo

2016-01-01

We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ~32 V and ~6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices.We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ~32 V and ~6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07185b

Efficient optical activation of Eu3+ ions doped in ZnGa2O4 thin films: Correlation between crystalline phase and photoluminescence

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Shinojima, Hiroyuki

2018-06-01

The physicochemical properties of Eu-doped zinc gallate (ZnGaxO1+1.5x:Eu) (1 < x < 6) thin films were investigated by means of photoluminescence (PL) triggered by band-to-band transitions of the host crystal at λ = 325 nm. Close correspondence between PL spectra and crystalline phases was verified by performing combinatorial measurements over four-inch substrates on which there was a spread of Ga/Zn composition ratios. The phase formation kinetics for deposition with H2O as an oxygen source gas followed by post annealing were similar to those of hydrothermal synthesis. ZnGa2O4 preferentially formed for a wide range of compositions between 1 < x < 4 and post annealing temperatures between 400 and 800 °C; intense emissions from Eu3+ ions were observed from the films. In contrast, the phase formation kinetics for deposition with O2 gas followed by post annealing were similar to those of solid-state reactions. Vacuum annealing above 500 °C caused preferential losses of Ga atoms and precipitation of Zn2Ga2O5 crystallites at x < 4, whereas ZnGa2O4 formed when a large amount of Ga (x > 6) was initially contained in the as-deposited state. The resulting PL spectra from Zn2Ga2O5 exhibited only a broad emission band from 450 to 700 nm, which was ascribed to defects in the poorly crystallized Zn:Ga = 1:1 phase. When the films deposited with O2 were post annealed in an O2 ambient, Zn atoms were lost, producing β-Ga2O3 as the primary phase accompanied with ZnGa2O4. The resulting Eu3+ emission was very weak, possibly because the Eu3+ ions attached to Ga2O3 domains were not emission-active and/or could not be efficiently excited due to wide bandgap (5 eV). When ZnGa2O4:Eu films were crystallized during deposition at elevated temperatures, weak emissions only from Eu3+ ions were observed. Taken together, these experimental results indicate that Eu3+ ions attached to ZnGa2O4 are highly emission-active; i.e., ZnGa2O4 is a particularly good host crystal with which to secure optical activation of doped Eu3+ ions.

Effect of Zn doping on the magneto-caloric effect and critical constants of Mott insulator MnV{sub 2}O{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shahi, Prashant; Kumar, A.; Shukla, K. K.

2014-09-15

X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV{sub 2}O{sub 4} have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents β, γ and δ do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that themore » calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn{sub 0.95}Zn{sub 0.05}V{sub 2}O{sub 4} is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.« less

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

NASA Astrophysics Data System (ADS)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

A heterojunction photocatalyst composed of zinc rhodium oxide, single crystal-derived bismuth vanadium oxide, and silver for overall pure-water splitting under visible light up to 740 nm.

PubMed

Kobayashi, Ryoya; Takashima, Toshihiro; Tanigawa, Satoshi; Takeuchi, Shugo; Ohtani, Bunsho; Irie, Hiroshi

2016-10-12

We recently reported the synthesis of a solid-state heterojunction photocatalyst consisting of zinc rhodium oxide (ZnRh 2 O 4 ) and bismuth vanadium oxide (Bi 4 V 2 O 11 ), which functioned as hydrogen (H 2 ) and oxygen (O 2 ) evolution photocatalysts, respectively, connected with silver (Ag). Polycrystalline Bi 4 V 2 O 11 (p-Bi 4 V 2 O 11 ) powders were utilized to form ZnRh 2 O 4 /Ag/p-Bi 4 V 2 O 11 , which was able to photocatalyze overall pure-water splitting under red-light irradiation with a wavelength of 700 nm (R. Kobayashi et al., J. Mater. Chem. A, 2016, 4, 3061). In the present study, we replaced p-Bi 4 V 2 O 11 with a powder obtained by pulverizing single crystals of Bi 4 V 2 O 11 (s-Bi 4 V 2 O 11 ) to form ZnRh 2 O 4 /Ag/s-Bi 4 V 2 O 11 , and demonstrated that this heterojunction photocatalyst had enhanced water-splitting activity. In addition, ZnRh 2 O 4 /Ag/s-Bi 4 V 2 O 11 was able to utilize nearly the entire range of visible light up to a wavelength of 740 nm. These properties were attributable to the higher O 2 evolution activity of s-Bi 4 V 2 O 11 .

Biosynthesis and characterization of ZnO nanoparticles using the aqueous leaf extract of Imperata cylindrica L.

NASA Astrophysics Data System (ADS)

Saputra, I. S.; Yulizar, Y.

2017-04-01

ZnO nanoparticles (ZnO NPs) were biosynthesized.The growth was observed by a sol-gel method. ZnO were successfully formed through the reaction of zinc nitrate tetrahydrate Zn(NO3)2.4H2O precursor with aqueous leaf extract of Imperata cylindrica L (ICL). The structural and optical properties of ZnO were investigated. The as-synthesized products were characterized by UV-Visible (UV-Vis), UV diffuse reflectance spectroscopy (UV-DRS), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS). UV-Vis absorption data showed hydrolysis and characteristic of absorption peak at 300 nm of Zn(OH)2. UV-DRS confirmed that ZnO NPs has the indirect band gap at 3.13 eV. FTIR spectrum revealed the functional groups and indicated the presence of protein as the capping and stabilizing agent on the ZnO surface. Powder XRD studies indicated the formation of pure wurtzite hexagonal structure with particle size of 11.9 nm. The detailed morphological and structural characterizations revealed that the synthesized products were hexagonal nanochip.

Immobilization and direct electrochemistry of glucose oxidase on a tetragonal pyramid-shaped porous ZnO nanostructure for a glucose biosensor.

PubMed

Dai, Zhihui; Shao, Guojian; Hong, Jianmin; Bao, Jianchun; Shen, Jian

2009-01-01

A tetragonal pyramid-shaped porous ZnO (TPSP-ZnO) nanostructure is used for the immobilization, direct electrochemistry and biosensing of proteins. The prepared ZnO has a large surface area and good biocompatibility. Using glucose oxidase (GOD) as a model, this shaped ZnO is tested for immobilization of proteins and the construction of electrochemical biosensors with good electrochemical performances. The interaction between GOD and TPSP-ZnO is examined by using AFM, N(2) adsorption isotherms and electrochemical methods. The immobilized GOD at a TPSP-ZnO-modified glassy carbon electrode shows a good direct electrochemical behavior, which depends on the properties of the TPSP-ZnO. Based on a decrease of the electrocatalytic response of the reduced form of GOD to dissolved oxygen, the proposed biosensor exhibits a linear response to glucose concentrations ranging from 0.05 to 8.2mM with a detection limit of 0.01mM at an applied potential of -0.50V which has better biosensing properties than those from other morphological ZnO nanoparticles. The biosensor shows good stability, reproducibility, low interferences and can diagnose diabetes very fast and sensitively. Such the TPSP-ZnO nanostructure provides a good matrix for protein immobilization and biosensor preparation.

n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guziewicz, M., E-mail: margu@ite.waw.pl; Jung, W.; Schifano, R.

Epitaxial n-type ZnO film has been grown, on a commercial 5 μm thick p-type 4H-SiC(00.1) Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 diffraction peak rocking curve of 0.34°{sup  }± 0.02° has been measured. Diodes formed on the n-ZnO/p-4H-SiC heterostructure show rectifying behavior with a forward to reverse current ratio at the level of 10{sup 9} at ±4 V, a leakage current density of ∼6 × 10{sup −8} A/cm{sup 2}, and a low ideality factor equal to 1.17 ± 0.04. In addition, the diodes exhibit selective photoresponse with a maximum at 367 nm, and with a current increasemore » of ∼10{sup 3} under illuminations with respect to the dark value, which makes such devices prospective candidates for ultraviolet light sensors.« less

Studies on annealed ZnO:V thin films deposited by nebulised spray pyrolysis method

NASA Astrophysics Data System (ADS)

Malini, D. Rachel

2018-04-01

Structural, optical and photoluminescence properties of annealed ZnO:V thin films deposited by nebulized spray pyrolysis technique by varying vanadium concentration are studied. Thickness of thin films varies from 1.52µm to 7.78µm. V2O5, VO2 and ZnO peaks are observed in XRD patterns deposited with high vanadium concentration and the intensity of peaks corresponding to ZnO decreases in those samples. Morphological properties were studied by analysing SEM images and annealed thin films deposited at ZnO:V = 50:50 possess dumb bell shape grains. Emission peaks corresponding to both Augur transition and deep level transition are observed in the PL spectra of the samples.

Iron Bioavailability from Ferric Pyrophosphate in Extruded Rice Cofortified with Zinc Sulfate Is Greater than When Cofortified with Zinc Oxide in a Human Stable Isotope Study.

PubMed

Hackl, Laura; Zimmermann, Michael B; Zeder, Christophe; Parker, Megan; Johns, Paul W; Hurrell, Richard F; Moretti, Diego

2017-03-01

Background: Extruded rice grains are often cofortified with iron and zinc. However, it is uncertain if the addition of zinc to iron-fortified rice affects iron absorption and whether this is zinc-compound specific. Objective: We investigated whether zinc, added as zinc oxide (ZnO) or zinc sulfate (ZnSO 4 ), affects human iron absorption from extruded rice fortified with ferric pyrophosphate (FePP). Methods: In 19 iron-depleted Swiss women (plasma ferritin ≤16.5 μ/L) aged between 20 and 39 y with a normal body mass index (in kg/m 2 ; 18.7-24.8), we compared iron absorption from 4 meals containing fortified extruded rice with 4 mg Fe and 3 mg Zn. Three of the meals contained extruded rice labeled with FePP ( 57 FePP): 1 ) 1 meal without added zinc ( 57 FePP-Zn), 2 ) 1 cofortified with ZnO ( 57 FePP+ZnO), and 3 ) 1 cofortified with ZnSO 4 ( 57 FePP+ZnSO 4 ). The fourth meal contained extruded rice without iron or zinc, extrinsically labeled with ferrous sulfate ( 58 FeSO 4 ) added as a solution after cooking. All 4 meals contained citric acid. Iron bioavailability was measured by isotopic iron ratios in red blood cells. We also measured relative in vitro iron solubility from 57 FePP-Zn, 57 FePP+ZnO, and 57 FePP+ZnSO 4 expressed as a fraction of FeSO 4 solubility. Results: Geometric mean fractional iron absorption (95% CI) from 57 FePP+ZnSO 4 was 4.5% (3.4%, 5.8%) and differed from 57 FePP+ZnO (2.7%; 1.8%, 4.1%) ( P < 0.03); both did not differ from 57 FePP-Zn: 4.0% (2.8%, 5.6%). Relative iron bioavailabilities compared with 58 FeSO 4 were 62%, 57%, and 38% from 57 FePP+ZnSO 4 , 57 FePP-Zn, and 57 FePP+ZnO, respectively. In vitro solubility from 57 FePP+ZnSO 4 differed from that of 57 FePP-Zn (14.3%; P < 0.02) but not from that of 57 FePP+ZnO (10.2% compared with 13.1%; P = 0.08). Conclusions: In iron-depleted women, iron absorption from FePP-fortified extruded rice cofortified with ZnSO 4 was 1.6-fold (95% CI: 1.4-, 1.9-fold) that of rice cofortified with ZnO. These findings suggest that ZnSO 4 may be the preferable zinc cofortificant for optimal iron bioavailability of iron-fortified extruded rice. This trial was registered at clinicaltrials.gov as NCT02255942. © 2017 American Society for Nutrition.

Ergonomic Synthesis Suitable for Industrial Production of Silver-Festooned Zinc Oxide Nanorods

NASA Astrophysics Data System (ADS)

Khan, G. R.; Khan, R. A.

2015-07-01

For maximizing productivity, minimizing cost, time-boxing process and optimizing human effort, a single-step, cost-effective, ultra-fast and environmentally benign synthesis suitable for industrial production of nanocrystalline ZnO, and Ag-doped ZnO has been reported in this paper. The synthesis based on microwave-supported aqueous solution method used zinc acetate dehydrate and silver nitrate as precursors for fabrication of nanorods. The synthesized products were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and UV-Vis-NIR spectroscopy. The undoped and Ag-doped ZnO nanorods crystallized in a hexagonal wurtzite structure having spindle-like morphology. The blue shift occurred at absorption edge of Ag-doped ZnO around 260 nm compared to 365 nm of bulk ZnO. The red shift occurred at Raman peak site of 434 cm-1 compared to characteristic wurtzite phase peak of ZnO (437 cm-1). The bandgap energies were found to be 3.10 eV, 3.11 eV and 3.18 eV for undoped, 1% Ag-doped, and 3% Ag-doped ZnO samples, respectively. The TEM results provided average particle sizes of 17 nm, 15 nm and 13 nm for undoped, and 1% and 3% Ag-doped ZnO samples, respectively.

Study on Zinc Oxide-Based Electrolytes in Low-Temperature Solid Oxide Fuel Cells.

PubMed

Xia, Chen; Qiao, Zheng; Feng, Chu; Kim, Jung-Sik; Wang, Baoyuan; Zhu, Bin

2017-12-28

Semiconducting-ionic conductors have been recently described as excellent electrolyte membranes for low-temperature operation solid oxide fuel cells (LT-SOFCs). In the present work, two new functional materials based on zinc oxide (ZnO)-a legacy material in semiconductors but exceptionally novel to solid state ionics-are developed as membranes in SOFCs for the first time. The proposed ZnO and ZnO-LCP (La/Pr doped CeO₂) electrolytes are respectively sandwiched between two Ni 0.8 Co 0.15 Al 0.05 Li-oxide (NCAL) electrodes to construct fuel cell devices. The assembled ZnO fuel cell demonstrates encouraging power outputs of 158-482 mW cm -2 and high open circuit voltages (OCVs) of 1-1.06 V at 450-550 °C, while the ZnO-LCP cell delivers significantly enhanced performance with maximum power density of 864 mW cm -2 and OCV of 1.07 V at 550 °C. The conductive properties of the materials are investigated. As a consequence, the ZnO electrolyte and ZnO-LCP composite exhibit extraordinary ionic conductivities of 0.09 and 0.156 S cm -1 at 550 °C, respectively, and the proton conductive behavior of ZnO is verified. Furthermore, performance enhancement of the ZnO-LCP cell is studied by electrochemical impedance spectroscopy (EIS), which is found to be as a result of the significantly reduced grain boundary and electrode polarization resistances. These findings indicate that ZnO is a highly promising alternative semiconducting-ionic membrane to replace the electrolyte materials for advanced LT-SOFCs, which in turn provides a new strategic pathway for the future development of electrolytes.

Structural, optical and field emission properties of urchin-shaped ZnO nanostructures.

PubMed

Al-Heniti, Saleh; Umar, Ahmad

2013-01-01

In this work, well-crystallized urchin-shaped ZnO structures were synthesized on silicon substrate by simple non-catalytic thermal evaporation process by using metallic zinc powder in the presence of oxygen as source materials for zinc and oxygen, respectively. The synthesized ZnO structures were characterized in detail in terms of their morphological, structural, optical and field emission properties. The detailed morphological investigations revealed that the synthesized structures possess urchin-shape and grown in high-density over the substrate surface. The detailed structural and optical characterizations revealed that the synthesized urchin-shaped ZnO structures are well-crystallized and exhibiting good optical properties. The field emission analysis for urchin-shaped ZnO structures exhibits a turn-on field of 4.6 V/microm. The emission current density reached to 0.056 mA/cm2 at an applied electrical field of 6.4 V/microm and shows no saturation. The calculated field enhancement factor 'beta', from the F-N plot, was found to be approximately 2.2 x 10(3).

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay

NASA Astrophysics Data System (ADS)

Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo; Mohamed, Azman Seeni; Saifuddin, Siti Nazmin; Masudi, Sam'an Malik; Mohamad, Dasmawati

2015-04-01

ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shifted of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line.

Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo

2015-04-24

ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shiftedmore » of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line.« less

Electrical and optical characteristics of n-Zno/p-GaN hetero-junction diode fabricated by ultra-high vacuum sputter.

PubMed

Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu

2013-09-01

We investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter. A physical relationship between the rotation rate during deposition process and post annealing conditions after deposited ZnO layer on p-GaN layer was discussed. When the rotation rates during deposition process of n-ZnO layer were 5 rpm and 15 rpm, the full width at half maximum of photoluminescence spectra of ZnO layer on the p-GaN layer was about 106 and 133 meV, respectively. Also, the ratio of deep level emission to near band edge emission was dramatically increased as increasing the rotation rate from 5 to 15 rpm. The n-ZnO/p-GaN hetero-junction diode grown at 5 rpm has a higher ratio of forward to reverse currents than the diode grown at 15 rpm. Also, the 600 degrees C-annealed diodes with 5 rpm showed good rectifying behavior with the barrier height of 0.74 eV, the ideality factor of 12.2, and the forward to reverse current ratio of 614 at +/- 8 V.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

NASA Astrophysics Data System (ADS)

Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

Fluor-ferro-leakeite, NaNa2(FC2+2Fe3+2Li)Si8O22F2, a new alkali amphibole from the Canada Pinabete pluton, Questa, New Mexico, U.S.A.

USGS Publications Warehouse

Hawthorne, F.C.; Oberti, R.; Ungaretti, L.; Ottolini, L.; Grice, Joel D.; Czamanske, G.K.

1996-01-01

Fluor-ferro-leakeite is a new amphibole species from the Canada Pinabete pluton, Questa, New Mexico, U.S.A.; it occurs in association with quartz, alkali feldspar, acmite, ilmenite, and zircon. It forms as anhedral bluish black crystals elongated along c and up to 1 mm long. It is brittle, H = 6, Dmeas = 3.37 g/cm3, Dcalc = 3.34 g/cm3. In plane-polarized light, it is strongly pleochroic, X = very dark indigo blue, Y = gray blue, Z = yellow green; X ??? c = 10?? (in ??obtuse), Y = b, Z ??? a = 4?? (in ?? obtuse), with absorption X > Y > Z. Fluor-ferro-leakeite is biaxial positive, ?? = 1.675(2), ??= 1.683(2), ?? = 1.694(1); 2V = 87(2)??; dispersion is not visible because of the strong absorption. Fluor-ferro-leakeite is monoclinic, space group C2/m, a = 9.792(1), b = 17.938(1), c = 5.3133(4) A??, ??= 103.87(7)??, V = 906.0(1) A??3, Z = 2. The ten strongest X-ray diffraction lines in the powder pattern are [d(I,hkl)]: 2.710(100,151), 2.536(92,202), 3.404(57,131), 4.481(54,040), 8.426(45,110), 2.985(38,241), 2.585(38,061), 3.122(29,310), 2.165(26,261), and 1.586(25,403). Analysis by a combination of electron microprobe, ion microprobe, and crystal-structure refinement (Hawthorne et al. 1993) gives SiO2 51.12, Al2O3 1.13, TiO2 0.68, Fe2O3 16.73, FeO 8.87, MgO 2.02, MnO 4.51, ZnO 0.57, CaO 0.15, Na2O 9.22, K2O 1.19, Li2O 0.99, F 2.87, H2Ocalc 0.60, sum 99.44 wt%. The formula unit, calculated on the basis of 23 O atoms, is (K0.23Na0.76)(Na1.97Ca0.03)(Mg 0.46Fe2+1.4Mn2+0.59Zn0.07Fe3+1.93-Ti 0.08Al0.02Li0.61])(Si7.81Al 0.19)O22(F1.39OH0.61). A previous crystal-structure refinement (Hawthorne et al. 1993) shows Li to be completely ordered at the M3 site. Fluor-ferro-leakeite, ideally NaNa2(Fe2+2Fe3+2Li)Si8O22F2, is related to leakeite, NaNa2(Mg2Fe3+3Li)Si 8O22(OH)2, by the substitutions Fe2+ ??? Mg and F ??? OH.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Facial synthesis of nanostructured ZnCo2O4 on carbon cloth for supercapacitor application

NASA Astrophysics Data System (ADS)

Patil, Swati J.; Park, Jungsung; Lee, Dong-Weon

2017-12-01

In this work, we have synthesized the ZnCo2O4 electrode by a facial one-step hydrothermal method on a carbon cloth for the supercapacitor application. The structural and phase purity of the prepared electrode material was confirmed by X-ray diffraction (XRD) technique. The surface morphology and elemental stoichiometry were studied using field emission scanning electron microscopy (FE-SEM). The FE-SEM micrograph illustrates that the ZnCo2O4 material is composed of microstrips with a ~0.5 μm width and length in micron uniformly covered the carbon cloth surface. The ZnCo2O4 electrode material further investigated for electrochemical analyses. The cyclic voltammetry results showed that the ZnCo2O4 microstrips electrode exhibited the highest specific capacitance of 1084 F/g at 2 mV/s scan rate. Remarkably, a maximum energy density of 12.5 Wh/kg was attained at a current density of 2 mA/cm2 with the power density of 3.6 kW/kg for the ZnCo2O4 microstrips electrode. Furthermore, the 96.2 % capacitive retention is obtained at a higher scan rate of 100 mV/s after 1000 CV cycles, indicating excellent cycling stability of the ZnCo2O4 microstrips electrode. The frequency-dependent rate capability and an ideal capacitive behaviour of the ZnCo2O4 microstrips electrode were analyzed using impedance analyses; a representing the ion diffusion structure of the material. These results show that the ZnCo2O4 microstrips electrode could be a promising material for supercapacitor application.

Enhanced optical band-gap of ZnO thin films by sol-gel technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.

2016-05-06

Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The resultsmore » of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.« less

Effect of (Mn,Cr) co-doping on structural, electronic and magnetic properties of zinc oxide by first-principles studies

NASA Astrophysics Data System (ADS)

Aimouch, D. E.; Meskine, S.; Boukortt, A.; Zaoui, A.

2018-04-01

In this study, structural, electronic and magnetic properties of Mn doped (ZnO:Mn) and (Mn,Cr) co-doped zinc oxide (ZnO:(Mn,Cr)) have been calculated with the FP-LAPW method by using the LSDA and LSDA+U approximations. Going through three configurations of Mn,Cr co-doped ZnO corresponding to three different distances between manganese and chromium, we have analyzed that ZnO:(Mn,Cr) system is more stable in its preferred configuration2. The lattice constant of undoped ZnO that has been calculated in this study is in a good agreement with the experimental and theoretical values. It was found to be increased by doping with Mn or (Mn,Cr) impurities. The band structure calculations showed the metallic character of Mn doped and Mn,Cr co-doped ZnO. As results, by using LSDA+U (U = 6eV), we show the half-metallic character of ZnO:Mn and ZnO:Mn,Cr. We present the calculated exchange couplings d-d of Mn doped ZnO which is in a good agreement with the former FPLO calculation data and the magnetization step measurement of the experimental work. The magnetic coupling between neighboring Mn impurities in ZnO is found to be antiferromagnetic. In the case of (Mn,Cr) co-doped ZnO, the magnetic coupling between Mn and Cr impurities is found to be antiferromagnetic for configuration1 and 3, and ferromagnetic for configuration2. Thus, the ferromagnetic coupling is weak in ZnO:Mn. Chromium co-doping greatly enhance the ferromagnetism, especially when using configuration2. At last, we present the 2D and 3D spin-density distribution of ZnO:Mn and ZnO:(Mn,Cr) where the ferromagnetic state in ZnO:(Mn,Cr) comes from the strong p-d and d-d interactions between 2p-O, 3d-Mn and 3d-Cr electrons. The results of our calculations suggest that the co-doping ZnO(Mn, Cr) can be among DMS behavior for spintronic applications.

Effect of the temperature on structural and optical properties of zinc oxide nanoparticles.

PubMed

Hadia, N M A; García-Granda, Santiago; García, José R

2014-07-01

Zinc nitrate hexahydrate, Zn(NO3)2 x 6H2O was used as a precursor with urea NH2CONH2 to prepare hydrozincite Zn5(CO3)2(OH)6 powder using hydrothermal method for 8 h at 90 degrees C. Zinc oxide (ZnO) nanoparticles (NPs) were prepared by thermal annealing of hydrozincite powder at different annealing temperatures, i.e., 350, 550 750 and 950 degrees C in air for 2 h. The resulting materials were characterized by X-ray diffraction, scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). The optical properties of the products were characterized by Fourier transform infrared spectroscopy (FT-IR), UV-Vis spectroscopy and photoluminescence (PL) spectra. It was found that the particle size increased from - 33 to 250 nm with increasing in the annealing temperatures. FTIR results showed that the standard peaks of zinc oxide were presented at 428.17 and 532.32 cm(-1). Thermal analysis study showed that the primary weight loss starts at - 93 degrees C is due to solvent evaporation. The secondary weight loss, observed at - 378 degrees C, is due to phase transition from hydrated zinc oxide to zinc oxide. The band gaps of the products were in the range - 3.26-3.30 eV. The PL spectrum showed that the as-synthesized ZnO nanoparticles had UV (381 nm) and green (537 nm) emissions.

Development of nanostructured ZnO thin film via electrohydrodynamic atomization technique and its photoconductivity characteristics.

PubMed

Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun

2014-08-01

This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.

Band alignments of different buffer layers (CdS, Zn(O,S), and In{sub 2}S{sub 3}) on Cu{sub 2}ZnSnS{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Chang; Liu, Fangyang; Song, Ning

2014-04-28

The heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In{sub 2}S{sub 3} on p-type Cu{sub 2}ZnSnS{sub 4} (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) Measurements. The band alignment of the heterojunctions formed between CZTS and the buffer materials was carefully measured. The XPS data were used to determine the Valence Band Offsets (VBO) of different buffer/CZTS heterojunctions. The Conduction Band Offset (CBO) was calculated indirectly by XPS data and directly measured by NEXAFS characterization. The CBO of the CdS/CZTS heterojunction was found to be cliff-like with CBO{sub XPS} = −0.24 ± 0.10 eV and CBO{submore » NEXAFS} = −0.18 ± 0.10 eV, whereas those of Zn(O,S) and In{sub 2}S{sub 3} were found to be spike-like with CBO{sub XPS} = 0.92 ± 0.10 eV and CBO{sub NEXAFS} = 0.87 ± 0.10 eV for Zn(O,S)/CZTS and CBO{sub XPS} = 0.41 ± 0.10 eV for In{sub 2}S{sub 3}/CZTS, respectively. The CZTS photovoltaic device using the spike-like In{sub 2}S{sub 3} buffer was found to yield a higher open circuit voltage (Voc) than that using the cliff-like CdS buffer. However, the CBO of In{sub 2}S{sub 3}/CZTS is slightly higher than the optimum level and thus acts to block the flow of light-generated electrons, significantly reducing the short circuit current (Jsc) and Fill Factor (FF) and thereby limiting the efficiency. Instead, the use of a hybrid buffer for optimization of band alignment is proposed.« less

Efficiencies of Eu{sup 3+} ions and hydrogen atoms as donors in ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp

2016-09-15

The donor efficiencies of Eu{sup 3+} ions and hydrogen atoms in ZnO crystalline films were investigated with reference to that of Ga{sup 3+} ions. It was found that Eu{sup 3+} ions acted as extrinsic donors in ZnO:Eu films, yielding a resistivity of 1.8 × 10{sup −3} Ω cm at a doping level of 1 at. %. This value is comparable to one for intrinsic donors in undoped ZnO films. The conductivity was maintained as the deposition temperature was increased to 200 °C, and this is evidence for the contribution of extrinsic donors. Deposition of Ga-doped and Eu-doped ZnO films in an H{sub 2}O gasmore » flow produced oxyhydrogenated ZnO:(Ga, H) and ZnO:(Eu, H) films in which the Ga{sup 3+} and Eu{sup 3+} donors were deactivated by oxidization. Nevertheless, hydrogen donors contributed to electrical conduction yielding a resistivity of 1 × 10{sup −2} Ω cm. Postannealing in an H{sub 2} gas ambient alleviated the excessive oxidization of the films and thereby reactivated the donor action of Ga{sup 3+} and Eu{sup 3+} ions, causing the resistivity to recover to 10{sup −3} Ω cm for ZnO:(Ga, H) and 10{sup −2} Ω cm for ZnO:(Eu, H). In contrast, vacuum annealing of ZnO:(Ga, H) and ZnO:(Eu, H) films increased resistivity through removal of hydrogen donors while not affecting the oxidized condition of the samples.« less

Effects of the carrier concentration on polarity determination in Ga-doped ZnO films by hard x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Song, Huaping; Makino, Hisao; Kobata, Masaaki; Nomoto, Junichi; Kobayashi, Keisuke; Yamamoto, Tetsuya

2018-03-01

Core level (CL) and valence band (VB) spectra of heavily Ga-doped ZnO (GZO) films with carrier concentrations (Ne) ranging from 1.8 × 1020 to 1.0 × 1021 cm-3 were measured by high-resolution Al Kα (hν = 1486.6 eV) x-ray photoelectron spectroscopy (XPS) and Cr Kα (hν = 5414.7 eV) hard x-ray photoelectron spectroscopy (HAXPES). The CL spectra of the GZO films measured by XPS had little dependence on Ne. In contrast, clear differences in asymmetric broadening were observed in the HAXPES spectra owing to the large probing depth. The asymmetry in the Zn 2p3/2 and O 1s HAXPES spectra is mainly attributed to the energy loss of the conduction electron plasmon caused by the high Ne of the GZO films. Similar asymmetry was also observed in the VB spectra of these GZO films. It was found that such asymmetry plays a crucial role in the determination of crystal polarity. With increasing Ne, the intensity of the sub-peak at a binding energy Eb of about 5 eV in the VB spectrum decreased and the sub-peak became indistinguishable. We clarified the limitation of the criterion using the sub-peak and proposed an alternative method for polarity determination.

The new oxide paradigm for solid state ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Rogers, D. J.; Bove, P.; Arrateig, X.; Sandana, V. E.; Teherani, F. H.; Razeghi, M.; McClintock, R.; Frisch, E.; Harel, S.

2018-03-01

The bandgap of wurzite ZnO layers grown on 2 inch diameter c-Al2O3 substrates by pulsed laser deposition was engineered from 3.7 to 4.8 eV by alloying with Mg. Above this Mg content the layers transformed from single phase hcp to mixed hcp/fcc phase before becoming single phase fcc above a bandgap of about 5.5 eV. Metal-Semiconductor-Metal (MSM) photodetectors based on gold Inter-Digitated-Transducer structures were fabricated from the single phase hcp layers by single step negative photolithography and then packaged in TO5 cans. The devices gave over 6 orders of magnitude of separation between dark and light signal with solar rejection ratios (I270 : I350) of over 3 × 105 and dark signals of 300 pA (at a bias of -5V). Spectral responsivities were engineered to fit the "Deutscher Verein des Gas- und Wasserfaches" industry standard form and gave over two decade higher responsivities (14 A/W, peaked at 270 nm) than commercial SiC based devices. Homogeneous Ga2O3 layers were also grown on 2 inch diameter c-Al2O3 substrates by PLD. Optical transmission spectra were coherent with a bandgap that increased from 4.9 to 5.4 eV when film thickness was decreased from 825 to 145 nm. X-ray diffraction revealed that the films were of the β-Ga2O3 (monoclinic) polytype with strong (-201) orientation. β-Ga2O3 MSM photodetectors gave over 4 orders of magnitude of separation between dark and light signal (at -5V bias) with dark currents of 250 pA and spectral responsivities of up to 40 A/W (at -0.75V bias). It was found that the spectral responsivity peak position could be decreased from 250 to 230 nm by reducing film thickness from 825 to 145 nm. This shift in peak responsivity wavelength with film thickness (a) was coherent with the apparent bandgap shift that was observed in transmission spectroscopy for the same layers and (b) conveniently provides a coverage of the spectral region in which MgZnO layers show fcc/hcp phase mixing.

Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

NASA Astrophysics Data System (ADS)

Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

2012-05-01

The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

Surface Grafting of Ru(II) Diazonium-Based Sensitizers on Metal Oxides Enhances Alkaline Stability for Solar Energy Conversion.

PubMed

Bangle, Rachel; Sampaio, Renato N; Troian-Gautier, Ludovic; Meyer, Gerald J

2018-01-24

The electrografting of [Ru(ttt)(tpy-C 6 H 4 -N 2 + )] 3+ , where "ttt" is 4,4',4″-tri-tert-butyl-2,2':6',2″-terpyridine, was investigated on several wide band gap metal oxide surfaces (TiO 2 , SnO 2 , ZrO 2 , ZnO, In 2 O 3 :Sn) and compared to structurally analogous sensitizers that differed only by the anchoring group, i.e., -PO 3 H 2 and -COOH. An optimized procedure for diazonium electrografting to semiconductor metal oxides is presented that allowed surface coverages that ranged between 4.7 × 10 -8 and 10.6 × 10 -8 mol cm -2 depending on the nature of the metal oxide. FTIR analysis showed the disappearance of the diazonium stretch at 2266 cm -1 after electrografting. XPS analysis revealed a characteristic peak of Ru 3d at 285 eV as well as a peak at 531.6 eV that was attributed to O 1s in Ti-O-C bonds. Photocurrents were measured to assess electron injection efficiency of these modified surfaces. The electrografted sensitizers exhibited excellent stability across a range of pHs spanning from 1 to 14, where classical binding groups such as carboxylic and phosphonic derivatives were hydrolyzed.

Fe2 PO5 -Encapsulated Reverse Energetic ZnO/Fe2 O3 Heterojunction Nanowire for Enhanced Photoelectrochemical Oxidation of Water.

PubMed

Qin, Dong-Dong; He, Cai-Hua; Li, Yang; Trammel, Antonio C; Gu, Jing; Chen, Jing; Yan, Yong; Shan, Duo-Liang; Wang, Qiu-Hong; Quan, Jing-Jing; Tao, Chun-Lan; Lu, Xiao-Quan

2017-07-10

Zinc oxide is regarded as a promising candidate for application in photoelectrochemical water oxidation due to its higher electron mobility. However, its instability under alkaline conditions limits its application in a practical setting. Herein, we demonstrate an easily achieved wet-chemical route to chemically stabilize ZnO nanowires (NWs) by protecting them with a thin layer Fe 2 O 3 shell. This shell, in which the thickness can be tuned by varying reaction times, forms an intact interface with ZnO NWs, thus protecting ZnO from corrosion in a basic solution. The reverse energetic heterojunction nanowires are subsequently activated by introducing an amorphous iron phosphate, which substantially suppressed surface recombination as a passivation layer and improved photoelectrochemical performance as a potential catalyst. Compared with pure ZnO NWs (0.4 mA cm -2 ), a maximal photocurrent of 1.0 mA cm -2 is achieved with ZnO/Fe 2 O 3 core-shell NWs and 2.3 mA cm -2 was achieved for the PH 3 -treated NWs at 1.23 V versus RHE. The PH 3 low-temperature treatment creates a dual function, passivation and catalyst layer (Fe 2 PO 5 ), examined by X-ray photoelectron spectroscopy, TEM, photoelectrochemical characterization, and impedance measurements. Such a nano-composition design offers great promise to improve the overall performance of the photoanode material. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and crystal structure of a novel pentaborate, Na{sub 3}ZnB{sub 5}O{sub 10}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Xuean; Li Ming; Chang Xinan

A novel ternary borate, trisodium zinc pentaborate, Na{sub 3}ZnB{sub 5}O{sub 10}, has been prepared by solid-state reaction at temperature below 750deg. C. The single-crystal X-ray structural analysis showed that Na{sub 3}ZnB{sub 5}O{sub 10} crystallizes in the monoclinic space group P2{sub 1}/n with a=6.6725(7)A, b=18.1730(10)A, c=7.8656(9)A, {beta}=114.604(6){sup o}, Z=4. It represents a new structure type in which double ring [B{sub 5}O{sub 10}]{sup 5-} building units are bridged by ZnO{sub 4} tetrahedra through common O atoms to form a two-dimensional {sub {approx}}{sup 2}[ZnB{sub 5}O{sub 10}]{sup 3-}-layer that affords one-dimensional channels running parallel to the [101] direction. Symmetry-center related {sub {approx}}{sup 2}[ZnB{sub 5}O{submore » 10}]{sup 3-} layers are stacked along the b-axis, with the interlayer void spaces and intralayer open channels filled by Na{sup +} cations to balance charge. The IR spectrum further confirms the presence of both BO{sub 3} and BO{sub 4} groups and UV-vis diffuse reflectance spectrum shows a band gap of about 3.2eV.« less

Hydrogen-related complexes in Li-diffused ZnO single crystals

NASA Astrophysics Data System (ADS)

Corolewski, Caleb D.; Parmar, Narendra S.; Lynn, Kelvin G.; McCluskey, Matthew D.

2016-07-01

Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>1019 cm-3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm-1, attributed to surface O-H species. When Li2CO3 is used, a structured blue luminescence band and O-H mode at 3327 cm-1 are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy-hydrogen complex, with an acceptor level ˜0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

Williamson-Hall analysis and optical properties of small sized ZnO nanocrystals

NASA Astrophysics Data System (ADS)

Kalita, Amarjyoti; Kalita, Manos P. C.

2017-08-01

We apply Williamson-Hall (WH) method of X-ray diffraction (XRD) line profile analysis for lattice strain estimation of small sized ZnO nanocrystals (crystallite size≈4 nm). The ZnO nanocrystals are synthesized by room temperature chemical co-precipitation followed by heating at 40 °C. Zinc acetate, sodium hydroxide and 2-mercaptoethanol (ME) are used for the synthesis of the nanocrystals. {100}, {002}, {101} and {200}, {112}, {201} line profiles in the XRD pattern are significantly merged, therefore determination of the full width at half maximum values and peak positions of the line profiles required for WH analysis has been carried out by executing Rietveld refinement of the XRD pattern. Lattice strain of the 4 nm sized ZnO nanocrystals is found to be 5.8×10-3 which is significantly higher as compared to the literature reported values for larger ones (crystallite size≈17-47 nm). Role of ME as capping agent is confirmed by Fourier transform infrared spectroscopy. The band gap of the nanocrystals is determined from the UV-Visible absorption spectrum and is found to be 3.68 eV. The photoluminescence spectrum exhibits emissions in the visible (408 nm-violet, 467 nm-blue and 538 nm-green) regions showing presence of zinc interstitial and oxygen vacancy in the ZnO nanocrystals.

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

PubMed

Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

2005-07-01

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

Doped tricalcium phosphate bone tissue engineering scaffolds using sucrose as template and microwave sintering: enhancement of mechanical and biological properties.

PubMed

Ke, Dongxu; Bose, Susmita

2017-09-01

β-tricalcium phosphate (β-TCP) is a widely used biocompatible ceramic in orthopedic and dental applications. However, its osteoinductivity and mechanical properties still require improvements. In this study, porous β-TCP and MgO/ZnO-TCP scaffolds were prepared by the thermal decomposition of sucrose. Crack-free cylindrical scaffolds could only be prepared with the addition of MgO and ZnO due to their stabilization effects. Porous MgO/ZnO-TCP scaffolds with a density of 61.39±0.66%, an estimated pore size of 200μm and a compressive strength of 24.96±3.07MPa were prepared by using 25wt% sucrose after conventional sintering at 1250°C. Microwave sintering further increased the compressive strength to 37.94±6.70MPa, but it decreased the open interconnected porosity to 8.74±1.38%. In addition, the incorporation of polycaprolactone (PCL) increased 22.36±3.22% of toughness while maintaining its compressive strength at 25.45±2.21MPa. Human osteoblast cell line was seeded on scaffolds to evaluate the effects of MgO/ZnO and PCL on the biological property of β-TCP in vitro. Both MgO/ZnO and PCL improved osteoinductivity of β-TCP. PCL also decreased osteoblastic apoptosis due to its particular surface chemistry. This novel porous MgO/ZnO-TCP scaffold with PCL shows improved mechanical and biological properties, which has great potential in bone tissue engineering applications. Copyright © 2017. Published by Elsevier B.V.

Data on the effect of improved TiO2/FTO interface and Ni(OH)2 cocatalyst on the photoelectrochemical performances and stability of CdS cased ZnIn2S4/TiO2 heterojunction.

PubMed

Mahadik, Mahadeo A; Shinde, Pravin S; Lee, Hyun Hwi; Cho, Min; Jang, Jum Suk

2018-04-01

This data article presents the experimental evidences of the effect of TiO 2 -fluorine doped tin oxide interface annealing and Ni(OH) 2 cocatalysts on the photoelectrochemical, structural, morphological and optical properties of Ni(OH) 2 /CdS/ZnIn 2 S 4 /TiO 2 heterojunction. The Raman spectroscopy exhibits the sharp features of the rutile phase of TiO 2 and in agreement with the X-ray diffraction data. The band gap energy of the 500 °C sample was found to be 3.12 eV, further it was increased to 3.20, 3.22 eV for samples annealed at 600 and 700 °C respectively. The decrease in the band gap energy at 500 °C related to the oxygen vacancies and was analysed by photoluminescence spectroscopy analysis. The synthesis, characterization methods and other experimental details of TiO 2 based heterostructure are also provided. The presence of CdS and ZnIn 2 S 4 coating on surface of TiO 2 electrodes providing a high surface area, extended visible absorption and helps to improve the change separation. This data article contains data related to the research article entitled "Highly efficient and stable 3D Ni(OH) 2 /CdS/ZnIn 2 S 4 /TiO 2 heterojunction under solar light: Effect of an improved TiO 2 /FTO interface and cocatalyst" (Mahadik et al., 2017) [1].

ZnO, TiO(2), SiO(2,) and Al(2)O(3) nanoparticles-induced toxic effects on human fetal lung fibroblasts.

PubMed

Zhang, Xiao Qiang; Yin, Li Hong; Tang, Meng; Pu, Yue Pu

2011-12-01

This study aims to investigate and compare the toxic effects of four types of metal oxide (ZnO, TiO(2), SiO(2,) and Al(2)O(3)) nanoparticles with similar primary size (∼20 nm) on human fetal lung fibroblasts (HFL1) in vitro. The HFL1 cells were exposed to the nanoparticles, and toxic effects were analyzed by using MTT assay, cellular morphology observation and Hoechst 33 258 staining. The results show that the four types of metal oxide nanoparticles lead to cellular mitochondrial dysfunction, morphological modifications and apoptosis at the concentration range of 0.25-1.50 mg/mL and the toxic effects are obviously displayed in dose-dependent manner. ZnO is the most toxic nanomaterials followed by TiO(2), SiO(2), and Al(2)O(3) nanoparticles in a descending order. The results highlight the differential cytotoxicity associated with exposure to ZnO, TiO(2), SiO(2), and Al(2)O(3) nanoparticles, and suggest an extreme attention to safety utilization of these nanomaterials. Copyright © 2011 The Editorial Board of Biomedical and Environmental Sciences. Published by Elsevier B.V. All rights reserved.

Positron annihilation spectroscopic characterization of defects in wide band gap oxide semiconductors

NASA Astrophysics Data System (ADS)

Sarkar, A.; Luitel, Homnath; Gogurla, N.; Sanyal, D.

2017-03-01

Annealing effect of granular ZnO has been studied by Doppler broadened electron positron annihilated γ-ray (0.511 MeV) line shape measurement. Ratio curve analysis shows that granular ZnO samples contain both Zn and O vacancies. Such defects exist as agglomerates of several vacancies and start to recover above 400 °C annealing. It has also been observed that due to annealing temperature difference of 125 °C (from 325 °C to 450 °C), huge change occurs in low temperature photoluminescence (PL) of ZnO. Significant reduction of free to bound (FB) transition ~3.315 eV is observed for increasing the annealing temperature. It has been conjectured that ~3.315 eV PL in ZnO is related to particular decoration (unknown) of both Zn and O vacancies. The methodology of revealing defect-property correlation as employed here can also be applied to other types of semiconductors.

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

2017-07-01

In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

NASA Astrophysics Data System (ADS)

Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

2017-04-01

This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Yen, Kuo-Yi; Chiu, Chien-Hua; Hsiao, Chi-Ying; Li, Chun-Wei; Chou, Chien-Hua; Lo, Ko-Ying; Chen, Tzu-Pei; Lin, Chu-Hsien; Lin, Tai-Yuan; Gong, Jyh-Rong

2014-02-01

Ga-doped ZnO (GZO) and In-doped ZnO (IZO) films were prepared by atomic layer deposition (ALD), and the ALD-grown GZO (or IZO) films with (or without) N2 annealing were employed to serve as transparent conducting layers (TCLs) in InGaN/GaN (multiple quantum well) MQW LEDs. Based on θ-to-2θ X-ray diffraction (XRD) analyses, the N2-annealed GZO was found to show almost the same lattice constant c as ZnO does, while the lattice constant c of a N2-annealed IZO was detected to be larger than that of the ZnO. It appears that the implementation of N2-annealed ALD-grown GZO (or IZO) in an InGaN/GaN MQW LED allows to enable light extraction and forward voltage reduction of the LED under certain conditions. At 20 mA operating condition, the 400 °C N2-annealed n-GZO-coated and the 600 °C N2-annealed n-IZO-coated InGaN/GaN MQW LEDs were found to exhibit optimized forward voltages of 3.1 and 3.2 V, respectively, with the specific contact resistances of the n-GZO/p-GaN and n-IZO/p-GaN contacts being 4.1×10-3 and 8.8×10-3 Ω-cm2. By comparing with an InGaN/GaN MQW LED structure having a commercial-grade indium tin oxide (ITO) TCL, the 400 °C N2-annealed n-GZO-coated InGaN/GaN MQW LED shows an increment of light output power of 15% at 20 mA. It is believed that the enhanced light extraction of the n-GZO-coated InGaN/GaN MQW LED is due to a higher refractive index of n-GZO than that of ITO along with a comparable optical transmittance of n-GZO to that of ITO.

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering.

PubMed

Li, Jyun-Yi; Chang, Sheng-Po; Hsu, Ming-Hung; Chang, Shoou-Jinn

2017-02-04

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and mobility of 5 cm²/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 10⁵ at a gate bias of -5 V under 290 nm illumination.

Anti-inflammatory drugs interacting with Zn(II), Cd(II) and Pt(II) metal ions.

PubMed

Dendrinou-Samara, C; Tsotsou, G; Ekateriniadou, L V; Kortsaris, A H; Raptopoulou, C P; Terzis, A; Kyriakidis, D A; Kessissoglou, D P

1998-09-01

Complexes of Zn(II), Cd(II) and Pt(II) metal ions with the anti-inflammatory drugs, 1-methyl-5-(p-toluoyl)-1H-pyrrole-2-acetic acid (Tolmetin), alpha-methyl-4-(2-methylpropyl)benzeneacetic acid (Ibuprofen), 6-methoxy-alpha-methylnaphthalene-2-acetic acid (Naproxen) and 1-(4-chlorobenzoyl)-5-methoxy-2-methyl-1H-indole-3-acetic acid (indomethacin) have been synthesized and characterized. In the structurally characterized Cd(naproxen)2 complex the anti-inflammatory drugs acts as bidentate chelate ligand coordinatively bound to metal ions through the deprotonated carboxylate group. Crystal data for 1: [C32H26O8Cd], orthorhombic, space group P22(1)2(1), a = 5.693(2) (A), b = 8.760(3) (A), c = 30.74(1) (A), V = 1533(1) A3, Z = 2. Antibacterial and growth inhibitory activity is higher than that of the parent ligands or the platinum(II) diamine compounds.

Graphene-supported zinc oxide solid-phase microextraction coating with enhanced selectivity and sensitivity for the determination of sulfur volatiles in Allium species.

PubMed

Zhang, Suling; Du, Zhuo; Li, Gongke

2012-10-19

A graphene-supported zinc oxide (ZnO) solid-phase microextraction (SPME) fiber was prepared via a sol-gel approach. Graphite oxide (GO), with rich oxygen-containing groups, was selected as the starting material to anchor ZnO on its nucleation center. After being deoxidized by hydrazine, the Zn(OH)2/GO coating was dehydrated at high temperature to give the ZnO/graphene coating. Sol-gel technology could efficiently incorporate ZnO/graphene composites into the sol-gel network and provided strong chemical bonding between sol-gel polymeric SPME coating and silica fiber surface, which enhanced the durability of the fiber and allowed more than 200 replicate extractions. Results indicated that pure ZnO coated fiber did not show adsorption selectivity toward sulfur compounds, which might because the ZnO nanoparticles were enwrapped in the sol-gel network, and the strong coordination action between Zn ion and S ion was therefore blocked. The incorporation of graphene into ZnO based sol-gel network greatly enlarged the BET surface area from 1.2 m2/g to 169.4 m2/g and further increased the adsorption sites. Combining the superior properties of extraordinary surface area of graphene and the strong coordination action of ZnO to sulfur compounds, the ZnO/graphene SPME fiber showed much higher adsorption affinity to 1-octanethiol (enrichment factor, EF, 1087) than other aliphatic compounds without sulfur-containing groups (EFs<200). Also, it showed higher extraction selectivity and sensitivity toward sulfur compounds than commercial polydimethylsiloxane (PDMS) and polydimethylsiloxane/divinylbenzene (PDMS/DVB) SPME fibers. Several most abundant sulfur volatiles in Chinese chive and garlic sprout were analyzed using the ZnO/graphene SPME fiber in combination with gas chromatography-mass spectrometry (GC-MS). Their limits of detection were 0.1-0.7 μg/L. The relative standard deviation (RSD) using one fiber ranged from 3.6% to 9.1%. The fiber-to-fiber reproducibility for three parallel prepared fibers was 4.8-10.8%. The contents were in the range of 1.0-46.4 μg/g with recoveries of 80.1-91.6% for four main sulfides in Chinese chive and 17.1-122.6 μg/g with recoveries of 73.2-80.6% for three main sulfides in garlic sprout. Copyright © 2012 Elsevier B.V. All rights reserved.

Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kumar, A. Guru Sampath; Obulapathi, L.; Sarmash, T. Sofi; Rani, D. Jhansi; Maddaiah, M.; Rao, T. Subba; Asokan, K.

2015-04-01

Thin films of cadmium (Cd) (0 wt.%, 2 wt.%, 4 wt.% and 10 wt.%) doped zinc oxide (ZnO) have been deposited on a glass substrate by reactive DC magnetron sputtering. The synthesized films are characterized by glancing angle x-ray diffraction (GAXRD), UV-Vis-NIR spectroscopy, four probe resistivity measurement, Hall measurement system, field emission-scanning electron microscopy and energy dispersive analysis by x-rays. A systematic study has been made on the structure, electrical and optical properties of Cd doped ZnO thin films as a function of Cd concentration (0 wt.%, 2 wt.%, 4 wt.% and 10 wt.%). All these films have a hexagonal wurtzite ZnO structure with (0 0 2) orientation without any Cd related phase from the GAXRD patterns. The grain size was increased and maximum appears at 4 wt.% Cd concentration. The electrical resistivity of the films decreased with the Cd doping and minimum resistivity was observed at 4 wt.% Cd concentration. UV-Vis-NIR studies showed that the optical band gap of ZnO (3.37 eV) was reduced to 3.10 eV which is at 4 wt.% Cd concentration.

Some developments on ceramic-to-metal and glass-ceramics-to-metal seals and related studies

NASA Astrophysics Data System (ADS)

Kothiyal, G. P.; Goswami, M.; Shrikhande, V. K.

2008-05-01

Seals and coatings based on ceramics and glass-ceramics find numerous applications in different disciplines of science and technology including space, accelerators, nuclear energy, chemical industry. Ceramic-to-metal (CM) seals based on conventional design (using brazing alloys) and glass-ceramics have been prepared. While Ag-Cu brazing alloy has been used in conventional CM seal, we have employed lithium zinc silicate (LZS) and lithium aluminum silicate (LAS) glass-ceramics for glass-ceramics-to-metal (GCM) seals. LZS glass-ceramics based on two different compositions; (a) LZSL composition (wt.%)- Li2O: 12.65, ZnO: 1.85, SiO2: 74.4, Al2O3: 3.8, K2O: 2.95, P2O5: 3.15, and B2O3: 1.2 (low ZnO) and (b) LZSH composition (wt.%)- Li2O: 8.9, ZnO: 24.03, SiO2: 53.7, Na2O: 5.42, P2O5: 2.95, and B2O3: 5.0 (high ZnO) were prepared with desired sealing characteristics for matched type seals. In addition, (wt.%) 12.6Li2O-71.7SiO2-5.1Al2O3-4.9K2O-3.2B2O3-2.5P2O5 (LAS-GC) was investigated for compressive type of seal. LZS glass-ceramics-to-Cu as well as SS-321 seals were found to withstand a vacuum of 10-6 Torr with leak rate 10-9 Torr. 1/s and LAS GC-to-SS304 seal showed high pressure endurance of 12000psi. In order to understand the mechanism of sealing, glass-ceramics-to-metal interface study has also been carried out.

Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering

PubMed Central

Petersen, Julien; Brimont, Christelle; Gallart, Mathieu; Schmerber, Guy; Gilliot, Pierre; Ulhaq-Bouillet, Corinne; Rehspringer, Jean-Luc; Colis, Silviu; Becker, Claude; Slaoui, Abdelillah; Dinia, Aziz

2010-01-01

We investigated the structural and optical properties of Eu-doped ZnO thin films made by sol-gel technique and magnetron reactive sputtering on Si (100) substrate. The films elaborated by sol-gel process are polycrystalline while the films made by sputtering show a strongly textured growth along the c-axis. X-ray diffraction patterns and transmission electron microscopy analysis show that all samples are free of spurious phases. The presence of Eu2+ and Eu3+ into the ZnO matrix has been confirmed by x-ray photoemission spectroscopy. This means that a small fraction of Europium substitutes Zn2+ as Eu2+ into the ZnO matrix; the rest of Eu being in the trivalent state. This is probably due to the formation of Eu2O3 oxide at the surface of ZnO particles. This is at the origin of the strong photoluminescence band observed at 2 eV, which is characteristic of the 5D0→7F2 Eu3+ transition. In addition the photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu3+ ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films. PMID:20644657

Fabrication and photoluminescence properties of graphite fiber/ZnO nanorod core-shell structures.

PubMed

Liu, Xianbin; Du, Hejun; Liu, Bo; Wang, Jianxiong; Sun, Xiao Wei; Sun, Handong

2011-08-01

Graphite fiber/ZnO nanorod core-shell structures were synthesized by thermal evaporation process. The core-shell hybrid architectures were comprised of ZnO nanorods grown on the surface of graphite fiber. In addition, Hollow ZnO hierarchical structure can be obtained by oxidizing the graphite fiber. Room temperature photoluminescence (PL) of the as-made graphite fiber/ZnO nanorod structures shows two UV peaks at around 3.274 eV and 3.181 eV. The temperature-dependent photoluminescence spectra demonstrate the two UV emissions are attributed to the intrinsic optical transitions and extrinsic defect-related emissions in ZnO. These hybrid structures may be used as the building block for fabrication of nanodevices.

3D ZnIn2S4 nanosheet/TiO2 nanowire arrays and their efficient photocathodic protection for 304 stainless steel

NASA Astrophysics Data System (ADS)

Sun, Wenxia; Wei, Na; Cui, Hongzhi; Lin, Yuan; Wang, Xinzhen; Tian, Jian; Li, Jian; Wen, Jing

2018-03-01

A well-designed heterostructure engineered ZnIn2S4 nanosheet/TiO2 nanowire arrays photoanode is investigated for photocathodic protection. The ZnIn2S4 nanosheets are distributed uniformly on the surface of the TiO2 nanowire by a hydrothermal method. The stem-and-leaf-like ZnIn2S4 nanosheet/TiO2 nanowire arrays exhibit excellent photoelectrochemical properties, owing to the energy band structure and large surface area. A maximum photocurrent density of 2 mA cm-2 is achieved for the ZnIn2S4 nanosheet/TiO2 nanowire composite film for a 6 h reaction time under white illumination. Moreover, the potential of the 304 stainless steel coupled with the composite film immediately shifts negatively to -1.17 V (vs. SCE), which is significantly lower than the corrosion potential (-0.201 V vs. SCE). Thus, the composite film offers a superior photocathodic protection for stainless steel against corrosion by a NaCl solution. This study provides a promising approach for the design and synthesis of composite films with enhanced photoelectrochemical performance.

Investigation into the stabilization/solidification performance of Portland cement through cement clinker phases.

PubMed

Qiao, X C; Poon, C S; Cheeseman, C R

2007-01-10

This research studied the influence of individual heavy metal on the hydration reactions of major cement clinker phases in order to investigate the performance of cement based stabilization/solidification (S/S) system. Tricalcium silicate (C3S) and tricalcium aluminate (C3A) had been mixed with individual heavy metal hydroxide including Zn(OH)2, Pb(OH)2 and Cu(OH)2, respectively. The influences of these heavy metal hydroxides on the hydration of C3S and C3A have been characterized by X-ray diffraction (XRD) and differential scanning calorimetry-thermogravimetry (DSC-TG). A mixture of Zn(OH)2, Pb(OH)2 and Cu(OH)2 was blended with Portland cement (PC) and evaluated through compressive strength and dynamic leach test. XRD and DSC-TG data show that all the heavy metal hydroxides (Zn(OH)2, Pb(OH)2 and Cu(OH)2) have detrimental effects on the hydration of C3A, but only Zn(OH)2 does to the C3S at early curing ages which can completely inhibit the hydration of C3S due to the formation of CaO(Zn(OH)2).2H2O. Cu6Al2O8CO(3).12H2O, Pb2Al4O4(CO3)(4).7H2O and Zn6Al2O8CO(3).12H2O are formed in all the samples containing C3A in the presence of metal hydroxides. After adding CaSO4 into C3A, the detrimental effect of heavy metals increases due to the coating effect of both calcium aluminate sulphates and heavy metal aluminate carbonates. The influence of heavy metal hydroxide on the hydration of C3S and C3A can be used to predict the S/S performance of Portland cement.

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.

PubMed

Jeong, Yesul; Pearson, Christopher; Kim, Hyun-Gwan; Park, Man-Young; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C

2016-01-27

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of ∼10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of ∼10(7).

Coordination polymers of 5-substituted isophthalic acid

DOE PAGES

McCormick, Laura J.; Morris, Samuel A.; Slawin, Alexandra M. Z.; ...

2015-12-10

In this work, the synthesis and characterisation of five coordination polymers - Ni 2(mip) 2 (H 2O) 8 ·2H 2O (1), Zn 6(mip) 5(OH) 2(H 2O) 4 ·7.4H 2O (2), Zn 6(mip) 5(OH) 2(H 2O) 2 ·4H 2O (3), Mn(HMeOip) 2 (4), and Mn 3(tbip) 2(Htbip) 2(EtOH) 2 (5) - are reported. Preliminary nitric oxide release data on compounds 2 and 3 are also given.

Fabrication of n-ZnO:Al/p-Si(100) heterojunction diode and its characterization

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Dharmaprakash, S. M.; Byrappa, K.

2018-04-01

Aluminum doped ZnO (n-ZnO:Al) nanostructured thin films were grown on ZnO seed layer coated p-Si(100) substrate employing hydrothermal technique. X-ray diffraction pattern revealed that the ZnO:Al film possess hexagonal wurtzite structure with preferential orientation along (002) direction. Photoluminescence of the sample displayed near band edge emission peak in the ultra-violet region and defect level emission peak in the visible region. The as grown thin film was used in the fabrication of n-ZnO:Al/p-Si heterojunction diode and the room temperature current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied. The heterojunction exhibited fairly good rectification with an ideality of 2.49 and reverse saturation current of 2 nA. The barrier height was found to be 0.668 eV from the I-V measurements. The C-V measurements showed a decrease in the capacitance of the heterojunction with an increase in the reverse bias voltage.

Novel ZnO/MgO/Fe2O3 composite optomagnetic nanoparticles.

PubMed

Kamińska, I; Sikora, B; Fronc, K; Dziawa, P; Sobczak, K; Minikayev, R; Paszkowicz, W; Elbaum, D

2013-05-15

A facile sol-gel synthesis of novel ZnO/MgO/Fe2O3 nanoparticles (NPs) is reported and their performance is compared to that of ZnO/MgO. Powder x-ray diffraction (XRD) patterns reveal the crystal structure of the prepared samples. The average particle size of the sample was found to be 4.8 nm. The optical properties were determined by UV-vis absorption and fluorescence measurements. The NPs are stable in biologically relevant solutions (phosphate buffered saline (PBS), 20 mM, pH = 7.0) contrary to ZnO/MgO NPs which degrade in the presence of inorganic phosphate. Superparamagnetic properties were determined with a superconducting quantum interference device (SQUID). Biocompatible and stable in PBS ZnO/MgO/Fe2O3 core/shell composite nanocrystals show luminescent and magnetic properties confined to a single NP at room temperature (19-24 ° C), which may render the material to be potentially useful for biomedical applications.

Effect of zinc oxide amounts on the properties and antibacterial activities of zeolite/zinc oxide nanocomposite.

PubMed

Alswat, Abdullah A; Ahmad, Mansor Bin; Saleh, Tawfik A; Hussein, Mohd Zobir Bin; Ibrahim, Nor Azowa

2016-11-01

Nanocomposites of zinc oxide loaded on a zeolite (Zeolite/ZnO NCs) were prepared using co-precipitation method. The ratio effect of ZnO wt.% to the Zeolite on the antibacterial activities was investigated. Various techniques were used for the nanocomposite characterization, including UV-vis, FTIR, XRD, EDX, FESEM and TEM. XRD patterns showed that ZnO peak intensity increased while the intensities of Zeolite peaks decreased. TEM images indicated a good distribution of ZnO-NPs onto the Zeolite framework and the cubic structure of the zeolite was maintained. The average particle size of ZnO-nanoparticles loaded on the surface of the Zeolite was in the range of 1-10nm. Moreover, Zeolite/ZnO NCs showed noticeable antibacterial activities against the tested bacteria; Gram- positive and Gram- negative bacteria, under normal light. The efficiency of the antibacterial increased with increasing the wt.% from 3 to 8 of ZnO NPs, and it reached 87% against Escherichia coli E266. Copyright © 2016 Elsevier B.V. All rights reserved.

Phenoxide and alkoxide complexes of Mg, Al and Zn, and their use for the ring-opening polymerization of ℇ-caprolactone with initiators of different natures.

PubMed

Minyaev, Mikhail E; Nifant'ev, Ilya E; Shlyakhtin, Andrey V; Ivchenko, Pavel V; Lyssenko, Konstantin A

2018-05-01

A new packing polymorph of bis(2,6-di-tert-butyl-4-methylphenolato-κO)bis(tetrahydrofuran-κO)magnesium, [Mg(C 15 H 23 O) 2 (C 4 H 8 O) 2 ] or Mg(BHT) 2 (THF) 2 , (BHT is the 2,6-di-tert-butyl-4-methylphenoxide anion and THF is tetrahydrofuran), (1), has the same space group (P2 1 ) as the previously reported modification [Nifant'ev et al. (2017d). Dalton Trans. 46, 12132-12146], but contains three crystallographically independent molecules instead of one. The structure of (1) exhibits rotational disorder of the tert-butyl groups and positional disorder of a THF ligand. The complex of bis(2,6-di-tert-butyl-4-methylphenolato-κO)bis(μ 2 -ethyl glycolato-κ 2 O,O':κO)dimethyldialuminium, [Al 2 (CH 3 ) 2 (C 4 H 7 O 3 ) 2 (C 15 H 23 O) 2 ] or [(BHT)AlMe(OCH 2 COOEt)] 2 , (2), is a dimer located on an inversion centre and has an Al 2 O 2 rhomboid core. The 2-ethoxy-2-oxoethanolate ligand (OCH 2 COOEt) displays a μ 2 -κ 2 O,O':κO semi-bridging coordination mode, forming a five-membered heteronuclear Al-O-C-C-O ring. The same ligand exhibits positional disorder of the terminal methyl group. The redetermined structure of the heptanuclear complex octakis(μ 3 -benzyloxo-κO:κO:κO)hexaethylheptazinc, [Zn 7 (C 2 H 5 ) 6 (C 7 H 7 O) 8 ] or [Zn 7 (OCH 2 Ph) 8 Et 6 ], (3), possesses a bicubic Zn 7 O 8 core located at an inversion centre and demonstrates positional disorder of one crystallographically independent phenyl group. Cambridge Structural Database surveys are given for complexes structurally analogous to (2) and (3). Complexes (2) and (3), as well as derivatives of (1), are of interest as catalysts for the ring-opening polymerization of ℇ-caprolactone, and polymerization results are reported.

Zinc oxide nanoring embedded lacey graphene nanoribbons in symmetric/asymmetric electrochemical capacitive energy storage

NASA Astrophysics Data System (ADS)

Sahu, Vikrant; Goel, Shubhra; Sharma, Raj Kishore; Singh, Gurmeet

2015-12-01

This article describes the synthesis and characterization of ZnO nanoring embedded graphene nanoribbons. Patterned holes (mesopore dia.) in graphene nanoribbons are chemically generated, leading to a high density of the edge planes. These planes carry negatively charged surface groups (like -COOH and -OH) and therefore anchor the metal ions in a cordial fashion forming a string of metal ions along the edge planes. These strings of imbibed metal ions precipitate as tiny ZnO nanorings over lacey graphene nanoribbons. The thus obtained graphene nanoribbon (GNR) based hierarchical ZnO mesoporous structures are three dimensionally accessible to the electrolyte and demonstrate high performance in capacitive energy storage. The ZnO/GNR nanocomposite electrode in an asymmetric supercapacitor device with lacey reduced graphene oxide nanoribbons (LRGONRs) as a negative electrode exhibits a 2.0 V potential window in the aqueous electrolyte and an ultra-short time constant (0.08 s). The wide potential window consequently increased the energy density from 6.8 Wh kg-1 (ZnO/GNR symmetric) to 9.4 Wh kg-1 (ZnO/GNR||LRGONR asymmetric). The relaxation time constant obtained for the asymmetric supercapacitor device was three orders of magnitude less compared to the ZnO (symmetric, 33 s) supercapacitor device. The high cycling stability of ZnO/GNR||LRGONR up to 96.7% capacitance retention, after 5000 GCD cycles at 2 mA cm-2, paves the way to a high performance aqueous electrochemical supercapacitive energy storage.This article describes the synthesis and characterization of ZnO nanoring embedded graphene nanoribbons. Patterned holes (mesopore dia.) in graphene nanoribbons are chemically generated, leading to a high density of the edge planes. These planes carry negatively charged surface groups (like -COOH and -OH) and therefore anchor the metal ions in a cordial fashion forming a string of metal ions along the edge planes. These strings of imbibed metal ions precipitate as tiny ZnO nanorings over lacey graphene nanoribbons. The thus obtained graphene nanoribbon (GNR) based hierarchical ZnO mesoporous structures are three dimensionally accessible to the electrolyte and demonstrate high performance in capacitive energy storage. The ZnO/GNR nanocomposite electrode in an asymmetric supercapacitor device with lacey reduced graphene oxide nanoribbons (LRGONRs) as a negative electrode exhibits a 2.0 V potential window in the aqueous electrolyte and an ultra-short time constant (0.08 s). The wide potential window consequently increased the energy density from 6.8 Wh kg-1 (ZnO/GNR symmetric) to 9.4 Wh kg-1 (ZnO/GNR||LRGONR asymmetric). The relaxation time constant obtained for the asymmetric supercapacitor device was three orders of magnitude less compared to the ZnO (symmetric, 33 s) supercapacitor device. The high cycling stability of ZnO/GNR||LRGONR up to 96.7% capacitance retention, after 5000 GCD cycles at 2 mA cm-2, paves the way to a high performance aqueous electrochemical supercapacitive energy storage. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06083d

The optical properties and photocatalytic activity of CdS-ZnS-TiO{sub 2}/Graphite for isopropanol degradation under visible light irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahmawati, Fitria, E-mail: fitria@mipa.uns.ac.id; Wulandari, Rini, E-mail: riniwulandari55@yahoo.com; Murni, Irvinna M., E-mail: irvinna-mutiara@yahoo.com

2016-02-08

This research prepared a photocatalyst tablet of CdS-ZnS-TiO{sub 2} on a graphite substrate. The synthesis was conducted through chemical bath deposition method. The graphite substrate used was a waste graphite rod from primary batteries. The aims of this research are studying the crystal structure, the optical properties and the photocatalytic activity of the prepared material. The photocatalytic activity was determined through isopropanol degradation. The result shows that the TiO{sub 2}/Graphite provide direct transition gap energy at 2.91 eV and an indirect transition gap energy at 3.21 eV. Deposition of CdS-ZnS changed the direct transition gap energy to 3.01 eV andmore » the indirect transition gap energy to 3.22 eV. Isopropanol degradation with the prepared catalyst produced new peaks at 223-224 nm and 265-266 nm confirming the production of acetone. The degradation follows first order with rate constant of 2.4 × 10{sup −2} min{sup −1}.« less

Growth and electrical properties of (Mn,F) co-doped 0.92Pb(Zn 1/3Nb 2/3)O 3-0.08PbTiO 3 single crystal

NASA Astrophysics Data System (ADS)

Zhang, Shujun; Lebrun, Laurent; Randall, Clive A.; Shrout, Thomas R.

2004-06-01

The growth and characterization of (Mn,F) doped Pb(Zn 1/3Nb 2/3)O 3-PbTiO 3 (PZNT) single crystals are reported in this paper. The typical single crystal obtained is up to 30 mm size with dark brown color. The crystal lattice parameters of doped PZNT crystal are slightly decreased compared to the pure one. The room temperature dielectric permittivity along <0 0 1> direction is about 6000, which is lower than that of the pure PZNT8 because of the dopants. The Curie temperature of the doped crystal is about 180°C while the ferroelectric phase transition temperature is around 100°C, which are higher than those of the pure PZNT8 single crystal. The remnant polarization and coercive field of <0 0 1> oriented doped crystal measured at 1 Hz and 10 kV/cm field are about 27 μC/cm 2 and 4.2 kV/cm, respectively. The room temperature mechanical quality factor is ˜300. Piezoelectric coefficient of <0 0 1> oriented doped crystal is higher than 3500 pC/N and the longitudinal electromechanical coupling factor is larger than 93%. The piezoelectric properties of doped PZNT single crystal with temperature and orientations are also reported in this paper. The valence state of the manganese dopant was determined by electron spin resonance, indicating no Mn 4+ in the crystals, suggesting the valence of manganese ions in PZNT crystals may be 2+, which acts as a hardener, stabilizes the domain wall and pins the domain wall motion, on the other hand, the dopant will enter Ti 4+ position, shifting the crystal composition to higher PT content.

[Study on X-ray powder diffraction of various structured zinc titanate prepared by the method of direct precipitation].

PubMed

Guo, Jian; Wang, Zhi-hua; Tao, Dong-liang; Guo, Guang-sheng

2007-05-01

Zinc titanate powders were prepared from Ti(SO4)2, Zn(NO3)2 x (6)H2O and (NH4)2CO3 by the method of direct precipitation. The effects of reaction conditions on the structure of zinc titanate were studied. The sample was analyzed by means of XRD and TG-DTA. The structure of zinc titanate was affected by the reaction subsequence of the formation of titanic acid and zinc carbonate. In the reaction system where titanic acid was generated earlier, collision reaction occurred between the generated zinc carbonate molecule and the surrounding titanic acid molecule. When titanic acid was generated earlier and precipitant (NH4)2CO3 was sufficient, Zn2Ti3O8 was obtained because of the sufficient collision reaction and superfluous titanic acid. In the reaction system where zinc carbonate was generated earlier, collision reaction occurred between the generated titanic acid molecule and the surrounding zinc carbonate molecule. When zinc carbonate was generated earlier and precipitant (NH4)2CO3 was sufficient, Zn2TiO4 was obtained because of the sufficient collision reaction and superfluous zinc carbonate. In addition, the kinds and structure of the production were affected by the dosage of precipitant and the reaction temperature. Zn2Ti3O8 or Zn2TiO4 could be obtained easier when using more precipitant or higher reaction temperature which could cause more sufficient collision reaction. ZnTiO3 could be obtained under the conditions of less precipitant and lower reaction temperature.

Preparation and photovoltaic properties of perovskite solar cell based on ZnO nanorod arrays

NASA Astrophysics Data System (ADS)

Xu, Yang; Liu, Tian; Li, Zhaosong; Feng, Bingjie; Li, Siqian; Duan, Jinxia; Ye, Cong; Zhang, Jun; Wang, Hao

2016-12-01

A careful control of ZnO nanorod arrays with various densities and thickness were achieved by hydrothermal method. An obvious increase in the ZnO nanorod density is observed as the concentrations of zinc acetate dropped as expected through the surface SEM images. On the other hand, samples with and without TiO2 compact layer were also studied and results had been analyzed to seek for an optimized substrate structure for light absorbing layer and increase the efficiency. What's more, a deep research for the drying temperature for perovskite layer was also conducted. As a result, SEM images discribe a promising surface appearance of perovskite layer which is finely attached onto the nanorod structure. Final power conversion efficiency (PCE) of FTO/ZnO seed layer/ZnO nanorods/perovskite/spiro-OMe-TAD/Au electrode photovoltaic device reached ∼9.15% together with open-circuit voltage of 957 mV, short-circuit current density of 17.8 mA/cm2 and fill factor of 0.537.

A new fluorescent and electrochemical Zn2+ ion sensor based on Schiff base derived from benzil and L-tryptophan.

PubMed

Dutta, Kaku; Deka, Ramesh C; Das, Diganta Kumar

2014-04-24

Single molecule acting as both fluorescent and electrochemical sensor for Zn(2+) ion is rare. The product (L) obtained on condensation between benzil and L-tryptophan has been characterized by H NMR, ESI-MS and FT-IR spectroscopy. L in 1:1 (v/v) CH3OH:H2O solution shows fluorescence emission in the range 300 nm to 600 nm with λmax at 350 nm when is excited with 295 nm photon. Zn(2+) ion could induce a 10-fold enhancement in fluorescent intensity of L. Fluorescence and UV/Visible spectral data analysis shows that the binding ratio between Zn(2+) ion and L is 1:1 with log β=4.55. Binding of Zn(2+) ion disrupts the photoinduced electron transfer (PET) process in L and causes the fluorescence intensity enhancement. When cyclic voltammogram is recorded for L in 1:1 (v/v) CH3OH:H2O using glassy carbon (GC) electrode, two quasi reversible redox couples at redox potential values -0.630±0.005 V and -1.007±0.005 V are obtained (Ag-AgCl as reference, scan rate 0.1 V s(-1)). Interaction with Zn(2+) ion makes the first redox couple irreversible while the second couple undergoes a 0.089 V positive shift in redox potential. Metal ions - Cd(2+), Cu(2+), Co(2+), Hg(2+), Ag(+), Ni(2+), Fe(2+), Mn(2+), Mg(2+), Ca(2+)and Pb(2+), individually or all together, has no effect on the fluorescent as well as electrochemical property of L. DFT calculations showed that Zn(2+) ion binds to L to form a stable complex. The detection limit for both fluorescence as well as electrochemical detection was 10(-6) M. Copyright © 2013 Elsevier B.V. All rights reserved.

Electrically conductive nanostructured silver doped zinc oxide (Ag:ZnO) prepared by solution-immersion technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afaah, A. N., E-mail: afaahabdullah@yahoo.com; Asib, N. A. M., E-mail: amierahasib@yahoo.com; Aadila, A., E-mail: aadilaazizali@gmail.com

2016-07-06

p-type ZnO films have been fabricated on ZnO-seeded glass substrate, using AgNO{sub 3} as a source of silver dopant by facile solution-immersion. Cleaned glass substrate were seeded with ZnO by mist-atomisation, and next the seeded substrates were immersed in Ag:ZnO solution. The effects of Ag doping concentration on the Ag-doped ZnO have been investigated. The substrates were immersed in different concentrations of Ag dopant with variation of 0, 1, 3, 5 and 7 at. %. The surface morphology of the films was characterized by field emission scanning electron microscope (FESEM). In order to investigate the electrical properties, the films weremore » characterized by Current-Voltage (I-V) measurement. FESEM micrographs showed uniform distribution of nanostructured ZnO and Ag:ZnO. Besides, the electrical properties of Ag-doped ZnO were also dependent on the doping concentration. The I-V measurement result indicated the electrical properties of 1 at. % Ag:ZnO thin film owned highest electrical conductivity.« less

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Reactions of yttria-stabilized zirconia with oxides and sulfates of various elements

NASA Technical Reports Server (NTRS)

Zaplatynsky, I.

1978-01-01

The reactions between partially stabilized zirconia, containing 8 weight-percent yttria, and oxides and sulfates of various elements were studied at 1200, 1300, and 1400 C for times to 800, 400, and 200 hours, respectively. These oxides and sulfates represent impurities and additives potentially present in gas turbine fuels or impurities in the turbine combustion air as well as the elements of the substrate alloys in contact with zirconia. Based on the results, these compounds can be classified in four groups: (1) compounds which did not react with zirconia (Na2SO4, K2SO4, Cr2O3, Al2O3 and NiO); (2) compounds that reached completely with both zirconia phases (CaO, BaO, and BaSO4); (3) compounds that reacted preferentially with monoclinic zirconia (Na2O, K2O, CoO, Fe2O3, MgO, SiO2, and ZnO); and (4) compounds that reacted preferentially with cubic zirconia (V2O5, P2O5).

Synergistic effect of biogenic Fe3+ coupled to S° oxidation on simultaneous bioleaching of Cu, Co, Zn and As from hazardous Pyrite Ash Waste.

PubMed

Panda, Sandeep; Akcil, Ata; Mishra, Srabani; Erust, Ceren

2017-03-05

Pyrite ash, a waste by-product formed during roasting of pyrite ores, is a good source of valuable metals. The waste is associated with several environmental issues due to its dumping in sea and/or land filling. Although several other management practices are available for its utilization, the waste still awaits and calls for an eco-friendly biotechnological application for metal recovery. In the present study, chemolithotrophic meso-acidophilic iron and sulphur oxidisers were evaluated for the first time towards simultaneous mutli-metal recovery from pyrite ash. XRD and XRF analysis indicated higher amount of Hematite (Fe 2 O 3 ) in the sample. ICP-OES analysis indicated concentrations of Cu>Zn>Co>As that were considered for bioleaching. Optimization studies indicated Cu - 95%, Co - 97%, Zn - 78% and As - 60% recovery within 8days at 10% pulp density, pH - 1.75, 10% (v/v) inoculum and 9g/L Fe 2+ . The productivity of the bioleaching system was found to be Cu - 1696ppm/d (12% dissolution/d), Co - 338ppm/d (12.2% dissolution/d), Zn k 576ppm/d (9.8% dissolution/d) and As - 75ppm/d (7.5% dissolution/d). Synergistic actions for Fe 2+ - S° oxidation by iron and sulphur oxidisers were identified as the key drivers for enhanced metal dissolution from pyrite ash sample. Copyright © 2016 Elsevier B.V. All rights reserved.

Hydrothermal synthesis of 4ZnO·B2O3·H2O:Ln3+ (Ln=Eu, Tb) phosphors: Morphology-tunable and luminescence properties.

PubMed

Cao, Shiwei; Jiao, Yang; Han, Weifang; Ge, Chunhua; Song, Bo; Wang, Jie; Zhang, Xiangdong

2018-02-05

4ZnO·B 2 O 3 ·H 2 O:Ln 3+ (Ln=Eu, Tb) phosphors with different morphologies have been successfully synthesized via one-step hydrothermal method through regulating the molar amount of Eu 3+ and Tb 3+ . Comprehensive scanning electron microscopy (SEM), X-ray diffraction (XRD) Fourier transform infrared spectrum (FT-IR) and inductively coupled plasma atomic emission spectrometer (ICP-AES) characterizations all confirm that obtained products are 4ZnO·B 2 O 3 ·H 2 O:Ln 3+ (Ln=Eu, Tb). The experimental results displayed that the morphology and photoluminescence of compounds is regularly changed with increased the molar amount of rare earth ions. For the Eu 3+ -doped, Tb 3+ -doped and Eu 3+ /Tb 3+ co-doped 4ZnO·B 2 O 3 ·H 2 O phosphors of morphologies, the rod-like structures gradually changed to flower-like structures, fine wire-like structure and hybrid structure, respectively. To their photoluminescence, the Eu 3+ shows a red emission (615nm); the Tb 3+ shows a green emission (545nm); for the Eu 3+ /Tb 3+ co-doped 4ZnO·B 2 O 3 ·H 2 O phosphors, a combination of blue (5d-4f of Eu 2+ ), green ( 5 D 4 - 7 F 5 of Tb 3+ ) and red ( 5 D 0 - 7 F 2 of Eu 3+ ) emissions emerges to achieve white emission. In addition, the energy transfer among Eu 3+ , Eu 2+ and Tb 3+ ions was also discussed. Copyright © 2017. Published by Elsevier B.V.

Laser stimulated third harmonic generation studies in ZnO-Ta2O5-B2O3 glass ceramics entrenched with Zn3Ta2O8 crystal phases

NASA Astrophysics Data System (ADS)

Siva Sesha Reddy, A.; Jedryka, J.; Ozga, K.; Ravi Kumar, V.; Purnachand, N.; Kityk, I. V.; Veeraiah, N.

2018-02-01

In this study zinc borate glasses doped with different concentrations Ta2O5 were synthesized and were crystallized by heat treatment for prolonged times. The samples were characterized by XRD, SEM, IR and Raman spectroscopy techniques. The SEM images of the crystallized samples have indicated that the samples contain randomly distributed crystal grains with size ∼1 μm entrenched in the residual amorphous phase. XRD studies have exhibited diffraction peaks identified as being due to the reflections from (1 1 1) planes of monoclinic Zn3Ta2O8 crystal phase that contains intertwined tetrahedral zinc and octahedral tantalate structural units. The concentration of such crystal phases in the bulk samples is observed to increase with increase of Ta2O5 up to 3.0 mol%. The IR and Raman spectroscopy studies have confirmed the presence of ZnO4 and TaO6 structural units in the glass network in addition to the conventional borate structural units. For measuring third harmonic generation (THG) in the samples, the samples were irradiated with 532 nm laser beam and the intensity of THG of probing beam (Nd:YAG λ = 1064 nm 20 ns pulsed laser (ω)) is measured as a function of fundamental beam power varying up to 200 J/m2. The intensity of THG is found to be increasing with increase of fundamental beam power and found to be the maximal for the glass crystallized with 3.0 mol% of Ta2O5. The intensity of THG of the ceramicized samples is found to be nearly 5 times higher with respect to that of pre-crystallized samples. The generation of 3ω is attributed to the perturbation/interaction between Zn3Ta2O8 anisotropic crystal grains and the incident probing beam.

Geochemistry of oceanic igneous rocks - Ridges, islands, and arcs - With emphasis on manganese, scandium, and vanadium

USGS Publications Warehouse

Doe, B.R.

1997-01-01

A database on a number of elements in oceanic volcanic rocks is presented, including the principal major-element oxides - SiO2, TiO2, Al2O3, Fe2O3(T), MnO, MgO, CaO, Na2O, K2O, and P2O5 (where T refers to total iron) - and the trace elements - Ba, Ce, Cr, Cu, Ni, Sc, Sr, V, Pb (mainly by isotope dilution), Yb, Zn, and Zr. Interpretations are given for transition metals, with emphasis on Mn, Sc, and V, in order to determine the concentration of the elements in primitive melts and assess their trends in magmatic differentiation. Transition metals are not enriched in plagioclase, so all are incompatible with pure plagioclase removal - that is, they become enriched in the melt. Both Cr and Ni are known to be highly compatible with olivine separation - i.e., they are depleted in the melt early in differentiation. Also, Sc is compatible with clinopyroxene (Cpx) removal from the melt and is depleted by separation of Cpx. Copper does not fit well in any of the principal silicates, but Cu, like Ni, is greatly enriched in sulfides that may remain in the source or separate from the magma. Decreasing Ni abundances and increasing Cu contents during differentiation are a sign of olivine separation. In the analysis presented herein, V - in the absence of Cpx separation - is found to behave remarkably like the moderately incompatible element Zn, and these two elements add to the list of element pairs of similar incompatibility whose ratios are insensitive to differentiation and to submarine weathering as well. Both are enhanced in titanomagnetite, so both would he compatible during titanomagnetite separation. When Cpx separates, however, V becomes compatible like Sc, but Zn remains incompatible. Thus, decreasing V (and Sc) contents and increasing Zn contents during differentiation are a sign of Cpx separation. Manganese often behaves much like Zn and therefore is moderately incompatible, but Mn is less compatible than Zn and V in titanomagnetite. Thus, decreasing Zn and V with increasing Mn is an indication of titanomagnetite removal. Dual compatible and incompatible trends with differentiation are found chiefly for Cu, Sc, and Sr. Distinguishing mid-ocean ridge basalts (MORB), oceanic-island volcanic rocks (OIV), and island-arc volcanic rocks (IAV) may be accomplished by plots of Ce/Yb versus Ba/Ce, where OIV plot to higher values of Ce/Yb than do MORB, and IAV data plot to higher values of Ba/Ce than do those of MORB. These ratios do not seem to be significantly affected by submarine weathering.

Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method.

PubMed

Fang, D Q; Zhang, S L

2016-01-07

The band offsets of the ZnO/anatase TiO2 and GaN/ZnO heterojunctions are calculated using the density functional theory/generalized gradient approximation (DFT/GGA)-1/2 method, which takes into account the self-energy corrections and can give an approximate description to the quasiparticle characteristics of the electronic structure of semiconductors. We present the results of the ionization potential (IP)-based and interfacial offset-based band alignments. In the interfacial offset-based band alignment, to get the natural band offset, we use the surface calculations to estimate the change of reference level due to the interfacial strain. Based on the interface models and GGA-1/2 calculations, we find that the valence band maximum and conduction band minimum of ZnO, respectively, lie 0.64 eV and 0.57 eV above those of anatase TiO2, while lie 0.84 eV and 1.09 eV below those of GaN, which agree well with the experimental data. However, a large discrepancy exists between the IP-based band offset and the calculated natural band offset, the mechanism of which is discussed. Our results clarify band alignment of the ZnO/anatase TiO2 heterojunction and show good agreement with the GW calculations for the GaN/ZnO heterojunction.

Structural and spectral properties of MgZnO2:Sm3+ phosphor

NASA Astrophysics Data System (ADS)

Rajput, Preasha; Sharma, Pallavi; Biswas, Pankaj; Kamni

2018-05-01

The samarium doped MgZnO2 phosphor was synthesized by the low-cost combustion method. The powder X-ray diffraction (XRD) analysis confirmed the crystallinity and phase purity of the phosphor. The lattice parameters were determined by indexing the diffraction peaks. The photoluminescence (PL) study revealed that the phosphor exhibited a broad excitation band in the UV region ranging between 200 to 350 nm. The 601 nm emission was ascribed to 4G5/2 to 6H7/2 transitions of the Sm3+ ion. The optical bandgap of MgZnO2:Sm3+ was obtained to be 3.56 eV. The phosphor can be projected as a useful material in X- and gamma-ray scintillators.

Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties

NASA Astrophysics Data System (ADS)

Khan, Muhammad Arif; Wahab, Yussof; Muhammad, Rosnita; Tahir, Muhammad; Sakrani, Samsudi

2018-03-01

Development of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8-10 nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I-V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4 ± 0.05 and 0.23 ± 0.005 eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.

Exploiting multi-function Metal-Organic Framework nanocomposite Ag@Zn-TSA as highly efficient immobilization matrixes for sensitive electrochemical biosensing.

PubMed

Dong, Sheying; Zhang, Dandan; Suo, Gaochao; Wei, Wenbo; Huang, Tinglin

2016-08-31

A novel multi-function Metal-Organic Framework composite Ag@Zn-TSA (zinc thiosalicylate, Zn(C7H4O2S), Zn-TSA) was synthesized as highly efficient immobilization matrixes of myoglobin (Mb)/glucose oxidase (GOx) for electrochemical biosensing. The electrochemical biosensors based on Ag@Zn-TSA composite and ionic liquid (IL) modified carbon paste electrode (CPE) were fabricated successfully. Furthermore, the properties of the sensors were discussed by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and amperometric current-time curve, respectively. The results showed the proposed biosensors had wide linear response to hydrogen peroxide (H2O2) in the range of 0.3-20,000 μM, to nitrite (NO2(-)) for 1.3 μM-1660 μM and 2262 μM-1,33,000 μM, to glucose for 2.0-1022 μM, with a low detection limit of 0.08 μM for H2O2, 0.5 μM for NO2(-), 0.8 μM for glucose. The values of the apparent heterogeneous electron transfer rate constant (ks) for Mb and GOx were estimated as 2.05 s(-1) and 2.45 s(-1), respectively. Thus, Ag@Zn-TSA was a kind of ideal material as highly efficient immobilization matrixes for sensitive electrochemical biosensing. In addition, this work indicated that MOF nanocomposite had a great potential for constructing wide range of sensing interface. Copyright © 2016 Elsevier B.V. All rights reserved.

Role of Zn doping in oxidative stress mediated cytotoxicity of TiO2 nanoparticles in human breast cancer MCF-7 cells

PubMed Central

Ahamed, Maqusood; Khan, M. A. Majeed; Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws

2016-01-01

We investigated the effect of Zn-doping on structural and optical properties as well as cellular response of TiO2 nanoparticles (NPs) in human breast cancer MCF-7 cells. A library of Zn-doped (1–10 at wt%) TiO2 NPs was prepared. Characterization data indicated that dopant Zn was incorporated into the lattice of host TiO2. The average particle size of TiO2 NPs was decreases (38 to 28 nm) while the band gap energy was increases (3.35 eV–3.85 eV) with increasing the amount of Zn-doping. Cellular data demonstrated that Zn-doped TiO2 NPs induced cytotoxicity (cell viability reduction, membrane damage and cell cycle arrest) and oxidative stress (reactive oxygen species generation & glutathione depletion) in MCF-7 cells and toxic intensity was increases with increasing the concentration of Zn-doping. Molecular data revealed that Zn-doped TiO2 NPs induced the down-regulation of super oxide dismutase gene while the up-regulation of heme oxygenase-1 gene in MCF-7 cells. Cytotoxicity induced by Zn-doped TiO2 NPs was efficiently prevented by N-acetyl-cysteine suggesting that oxidative stress might be the primarily cause of toxicity. In conclusion, our data indicated that Zn-doping decreases the particle size and increases the band gap energy as well the oxidative stress-mediated toxicity of TiO2 NPs in MCF-7 cells. PMID:27444578

Enhanced photoluminescence and thermal stability of divalent ions (Zn2+, Mg2+) assisted CaTiO3:Eu3+ perovskite phosphors for lighting applications

NASA Astrophysics Data System (ADS)

Singh, Dhananjay Kumar; Manam, J.

2018-03-01

Current study proposes the improved red emission of Zn2+ and Mg2+ ions incorporated CaTiO3:Eu3+ phosphors synthesized via the well-known solid-state reaction method. Under the 397 nm UV excitation, the Zn2+- and Mg2+-incorporated CaTiO3:0.15Eu3+ phosphor having orthorhombic structure with space group Pbnm exhibited an intense red emission at 619 nm. This can be credited to the hypersensitive 5D0 → 7F2 transition of Eu3+ ions, which is also indicative of the fact that the Eu3+ ions populated the non-inversion symmetry sites in the CaTiO3 lattices. The optimized composition CaTiO3:0.15Eu3+, 0.20Zn2+ and CaTiO3:0.15Eu3+, 0.10Mg2+ phosphors, pronounces in a magnificent enhancement of PL intensity by 5.5 and 2.5 times, respectively, as compared to CaTiO3:0.15 Eu3+ phosphor. From the temperature-dependent emission spectra, ΔEa were enunciated to be 0.101 and 0.086 eV for CaTiO3:0.15Eu3+, 0.20Zn2+ and CaTiO3:0.15Eu3+, 0.10Mg2+ phosphors, respectively, for thermal quenching. In addition, it can be better understood as related to the adequate thermal stability of 60% even at 450 and 420 K, respectively. Furthermore, the Judd-Ofelt theory was used to study the radiative intensity parameters of Eu3+ ions in the CaTiO3 lattices. The experimental results incited the bright prospects of synthesized ceramics as a promising candidate for lighting applications.

Synthesis and characterization of ZnO nanoparticles: effect of solvent and antifungal capacity of NPs obtained in ethylene glycol

NASA Astrophysics Data System (ADS)

López, Cenayda; Rodríguez-Páez, Jorge E.

2017-12-01

In this work, nanoparticles of zinc oxide (ZnO-NPs) were synthesized using acetic acid, ethanol and ethylene glycol as solvents. To determine the physicochemical and structural characteristics of the synthesized nanoparticles, IR spectroscopy, X-ray diffraction, UV-Vis spectroscopy and transmission electron microscopy were used. The characterization results indicated that the particles obtained were of nanometers size (< 100 nm) with different morphologies: needle-type when using acetic acid, nanoribbons using ethanol, and spheroidal using ethylene glycol. The results of this work show that on using solvents with a lower dielectric constant value a preferential direction of nanoparticle growth would be favored, leading to the formation of nanoribbons, in ethanol ( ɛ r = 24.3), and needles in acetic acid ( ɛ r = 6.2). The band gap of ZnO-Nps depends of synthesis solvent used: 3.37 eV for acetic acid, 3.3 eV to ethanol and 3.28 eV to ethylene glycol, indicating that the optical properties of these nanoparticles are affected by the synthesis medium. Based on the information from the characterization of the ZnO-NPs synthesized, the spheroidal nanoparticles were selected, to determine their antifungal capacity on cultures of Aspergillus niger strains. The concentrations of ZnO-NPs that showed the greatest antifungal effect were those from 9 mmol L-1.

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

PubMed

Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

2015-10-14

Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)<10(-6) g m(-2) day(-1)) as well as the defect-free nature of the ALD dielectric and ZnO channel layers, the TFTs exhibit excellent device performance with high stability and flexibility: field-effect mobility>20 cm2 V(-1) s(-1), subthreshold swing<0.4 V decade(-1) after extended bias-stressing (>10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

Air Force Office of Scientific Research Technical Report Summaries.

DTIC Science & Technology

1992-01-01

Wo N a*1 W.V. 4 4 1 z ? mO 4 1w~ 4 00~~~~~0 N14 000 N.J 014 N ~ Q u~ 0 Nb.)𔃺(sia 4S~ 4 4 W.. 66 r- IDS 4 ag - a"u r- ma- P I" Mj 0n 1V0 ’a V 4 VW L4 W...C!z E E P L 00 8 x z 0 M 4-. z 0 C’, Al S S Oslo, Eu 0 2*’ 0 01 C. 0 . 80 0.ŔN * .u *L-3 -* .8C at U C E M let- C- L t 00 I az L ag A 0!0 400 u0U L...8217 04a M 5 L0 39 0 L0 WIC a in ag n 31c L P4 L 0 L J * 2I. 3i CU s,; w ’ V) C) 3 - u &’W( C 0)C0 ~ Eq 50 w 0 ’.6 c4e Zn Cx N -m J’ SLQO O ’ o40 0 L-C V

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

NASA Astrophysics Data System (ADS)

Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Hwang, Hyeon Jun; Ha, Min-Woo; Kim, Jiyoung

2015-03-01

In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm2/V.s and the lowest n-type carrier concentration of approximately 1.0 × 1018/cm3 were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

A series of transition metal-organic frameworks based on a bipyridinium carboxylate ligand: Syntheses, structures and photoluminescent properties

NASA Astrophysics Data System (ADS)

Pei, Ru-Bo; Cao, Ming-Yang; Li, Lin-Ke; Dong, Xi-Yan; Zang, Shuang-Quan

2017-09-01

Based on a bipyridinium carboxylate ligand 1-(3,5-dicarboxy)-benzyl-1,2-di(pyridine-4-yl)ethylene chloride (H2L+Cl-), eight transition metal coordination polymers, namely, {[Zn(L)Cl]ṡ4H2O}n (1), {[Zn(L)H2O]ṡNO3ṡ2H2O}n (2), {[Zn(L) (H2O)]ṡ(NO3)0.5ṡ(Cl)0.5ṡ2H2O}n (3), {[Cd(L)(H2O)(NO3)]ṡ2H2O}n (4), {[Cd1.5(L) (Cl)2]ṡ2H2O}n (5), {[Cu(L)(H2O)]ṡNO3ṡH2O}n (6), {[Cu(HL)2(H2O)2]·Cl2·6H2O}n (7) and {[Ni(L)(H2O)Cl]ṡ4H2O}n (8) have been synthesized and characterized by single-crystal X-ray diffraction analyses. Complexes 1 and 8 display 2D wave-like layer structures with a 3-connected 63 topology. Complexes 2 and 6 demonstrate 3D 2-fold interpenetrating frameworks with uninodal, 3-connected (10,3)-d utp-topology. Another pair of 3D 2-fold interpenetrating frameworks 3 and 4 possess 3-connected, uninodal 103ThSi2 (ths)-topology. Complex 5 shows a 2D layer structure based on the extending of trinuclear Cd(II) subunits. Complex 7 presents 1D double-chain structure, in which the central Cu(II) ions are connected by the partially deprotonated ligand HL. Additionally, powder X-ray diffractions (PXRD) and thermogravimetric analyses of complexes 1-8, as well as the solid-state luminescent properties of d10 metal complexes 1-4 at room temperature have also been discussed.

Structural and luminescence properties of self-yellow emitting undoped and (Ca, Ba, Sr)-doped Zn2V2O7 phosphors synthesized by combustion method

NASA Astrophysics Data System (ADS)

Foka, Kewele E.; Dejene, Birhanu F.; Koao, Lehlohonolo F.; Swart, Hendrik C.

2018-04-01

A self-activated yellow emitting Zn2V2O7 was synthesized by combustion method. The influence of the processing parameters such as synthesis temperature and dopants concentration on the structure, morphology and luminescence properties was investigated. The X-ray diffraction (XRD) analysis confirmed that the samples have a tetragonal structure and no significant structural change was observed in varying both the synthesis temperature and the dopants concentration. The estimated average crystallite size was 78 nm for the undoped samples synthesized at different temperatures and 77 nm for the doped samples. Scanning electron microscope (SEM) images showed agglomerated hexagonal-shaped particles with straight edges at low temperatures and the shape of the particles changed to cylindrical structures at moderate temperatures. At higher temperatures, the morphology changed completely. However, the morphologies of the doped samples looked alike. The photoluminescence (PL) of the product exhibited broad emission bands ranging from 400 to 800 nm. The best luminescence intensity was observed for the undoped Zn2V2O7 samples and those synthesized at 600 ℃ . Any further increase in synthesis temperature, type and concentration of dopants led to a decrease in the luminescence intensity. The broad band emission peak of Zn2V2O7 consisted of two broad bands corresponding to emissions from the Em1 (3T2→1A1) and Em2 (3T1→1A1) transitions.

Nano-sized ZnO powders prepared by co-precipitation method with various pH

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purwaningsih, S. Y., E-mail: sriyanisaputri@gmail.com; Pratapa, S.; Triwikantoro,

2016-04-19

In this work, nano-sized ZnO powders have been synthesized by the co-precipitation method with Zn(CH3COOH)2.2H2O, HCl, and NH3.H2O as raw materials in various pH ranging from 8 to 10. The purity, microstructure, chemical group analysis, morphology of the prepared ZnO powders were studied by X-ray diffraction (XRD), Fourier transform infrared spectrometer (FTIR), energy dispersive X-ray spectrometry (EDX), and scanning electron microscope (SEM), respectively. Rietveld refinement of XRD data showed that ZnO crystallizes in the wurtzite structure with high purity. The obtained powders were nano-sized particles with the average crystallite size about 17.9 ± 2.1 nm synthesized with pH of 9.5, atmore » 85°C, and stirring time of 6 h. The SEM results have visualied the morphology of ZnO nanoparticles with spherical-like shape. The effect of processing conditions on morphology of ZnO was also discussed.« less

Synthesis of p-type ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Look, D. C.; Wrobel, J. M.; Jeong, H. M.; White, H. W.

2000-06-01

p-Type ZnO obtained by arsenic (As) doping is reported for the first time. Arsenic-doped ZnO (ZnO : As) films have been deposited on (0 0 1)-GaAs substrates by pulsed laser ablation. The process of synthesizing p-type ZnO : As films was performed in an ambient gas of ultra-pure (99.999%) oxygen. The ambient gas pressure was 35 mTorr with the substrate temperature in the range 300-450°C. ZnO films grown at 400°C and 450°C are p-type and As is a good acceptor. The acceptor peak is located at 3.32 eV and its binding energy is about 100 meV. Acceptor concentrations of As atoms in ZnO films were in the range from high 10 17 to high 10 21 atoms/cm 3 as determined by secondary ion mass spectroscopy (SIMS) and Hall effect measurements.

Role of water in the dynamic disproportionation of Zn-based TCNQ(F4) coordination polymers (TCNQ = tetracyanoquinodimethane).

PubMed

Nafady, Ayman; Le, Thanh Hai; Vo, Nguyen; Haworth, Naomi L; Bond, Alan M; Martin, Lisandra L

2014-02-17

Intriguingly, coordination polymers containing TCNQ(2–) and TCNQF4(2–) (TCNQ = 7,7,8,8-tetracyanoquinodimethane, TCNQF4 = 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, both designated as TCNQ(F4)(2–)) may be generated from reaction of metal ions with TCNQ(F4)•–. An explanation is now provided in terms of a solvent-dependent dynamic disproportionation reaction. A systematic study of reactions associated with TCNQ(F4) and electrochemically generated TCNQ(F4)MeCN•– and TCNQ(F4)MeCN(2–) revealed that disproportionation of TCNQ(F4)MeCN•– radical anions in acetonitrile containing a low concentration of water is facilitated by the presence of ZnMeCN(2+). Thus, while the disproportionation reaction 2TCNQ(F4)MeCN•– TCNQ(F4)MeCN + TCNQ(F4)MeCN(2–) is thermodynamically very unfavorable in this medium (Keq ≈ 9 × 10(–10); TCNQF4), the preferential precipitation of ZnTCNQ(F4)(s) drives the reaction: ZnMeCN(2+) + 2 TCNQ(F4)MeCN•– ZnTCNQ(F4)(s) + TCNQ(F4)MeCN. The concomitant formation of soluble TCNQ(F4)MeCN and insoluble ZnTCNQ(F4)(s) and the loss of TCNQ(F4)MeCN•– were verified by UV–visible and infrared spectroscopy and steady-state voltammetry. Importantly, the reverse reaction of comproportionation rather than disproportionation becomes the favored process in the presence of ≥3% (v/v) water, due to the increased solubility of solid ZnTCNQ(F4)(s). Thus, in this “wet” environment, ZnMeCN(2+) and TCNQ(F4)MeCN•– are produced from a mixture of ZnTCNQ(F4)(s) and TCNQ(F4)MeCN and with the addition of water provides a medium for synthesis of [Zn(TCNQ(F4))2(H2O)2]. An important conclusion from this work is that the redox level of TCNQ(F4)-based materials, synthesized from a mixture of metal cations and TCNQ(F4)•–, is controlled by a solvent-dependent disproportionation/comproportionation reaction that may be tuned to favor formation of solids containing the monoanion radical, the dianion, or even a mixture of both.

Phosphate base laser glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izumitani, T.; Tsuru, M.

1980-12-16

A phosphate base laser glass comprising 55-70% P2O5, 1-15% Al2O3, 0-25% Li2O, 0-25% Na2O, 0-8% K2O, the total proportion of Li2O, Na2O, and K2O being 10-25%, 0-15% BaO, 0-15% ZnO, 0-15% CaO , 0-15%, sro, 0-15% MgO, the total proportion of BaO, ZnO, CaO, SrO, and MgO being 5-15%, 0-5% Y2O3, 0-5% La2O3, 0-5% GeO2, 0-5% CeO2, 0-3% Nb2O5, 0-3% MnO2, 0-2% Ta2O5, 0-1% Sb2O3, and 0.01-5% Nd2O3, all % being mole %. The phosphate base laser glass of this invention has a high induced emission cross section, a low non-linear refractive index coefficient, and excellent acid resistance and divitrificationmore » resistance. By replacing partially or wholely one or more of LiO2, Na2O, K2O, BaO, ZnO, CaO, SrO, MgO or Al2O3 by LiF, NaF, KF , BaF2ZnF2, CaF2, SrF2, MgF2 or AlF3, respectively, the above properties of the laser glass are further improved.« less

A fabrication and characterictics of microbolometer detectors using VOx/ZnO/VOx multilayer thin film processing

NASA Astrophysics Data System (ADS)

Han, Myung-Soo; Kim, Dae Hyeon; Ko, Hang Ju; Shin, Jae Chul; Kim, Hyo Jin; Kim, Do Gun

2014-06-01

In this work, a novel fabrication method for VOx-ZnO multilayers with mixed phase of the VO2 and V2O3 through the diffusion of oxygen by annealing at low temperature is presented. A stable sandwich structure of a VOx/ZnO/VOx multilayer was deposited at room temperature, through the oxygen gas flow rate, by RF sputtering system, and the mixed phase was formed through oxygen diffusion by annealing at O2 atmosphere. The results show that the single phase like multilayer formed by this process has a high TCR of more than -2.5%/K and low resistance of about 100 kohm at room temperature. XRD results for the as-deposited VOx/ZnO/VOx multilayer.

Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

NASA Astrophysics Data System (ADS)

Takahashi, Takanori; Oikawa, Kento; Hoga, Takeshi; Uraoka, Yukiharu; Uchiyama, Kiyoshi

2017-10-01

In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.

Doping induced modifications in the electronic structure and magnetism of ZnO films: Valence band and conduction band studies

NASA Astrophysics Data System (ADS)

Katba, Savan; Jethva, Sadaf; Udeshi, Malay; Trivedi, Priyanka; Vagadia, Megha; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kuberkar, D. G.

2017-11-01

The electronic structure of Pulsed Laser Deposited (PLD) ZnO, Zn0.95Fe0.05O (ZFO), Zn0.98Al0.02O (ZAO) and Zn0.93Fe0.05Al0.02O (ZFAO) films were investigated by Photoelectron spectroscopy and X-ray absorption spectroscopy. X-ray diffraction and ϕ-scan measurements show epitaxial c-directional growth of the films. Temperature dependent magnetization and M-H loop measurements show the presence of room temperature magnetic ordering in all the films. Fittings of Fe 2p XPS and Fe L3,2 -edge XAS of ZFO and ZFAO films show the presence of Fe, in both, Fe+2 and Fe+3 states in tetrahedral symmetry. Valence band spectra in resonance mode show resonance photon energy at 56 eV showing the presence of Fe2+ state (∼2 eV) near the Fermi level. A significant effect of Fe and Al doping on the spectral shape of O K-edge XAS was observed. Results of the Spectroscopic studies reveal that, ferromagnetism in the films is due to the contribution of oxygen deficiency which increases the number of charge carriers that take part in the exchange interaction. Al co-doping with Fe (in ZFAO) results in the enhancement of saturation magnetization by increase in the carrier-mediated ferromagnetic exchange interaction.

Enhanced performance of dye-sensitized solar cell using Bi2Te3 nanotube/ZnO nanoparticle composite photoanode by the synergistic effect of photovoltaic and thermoelectric conversion

NASA Astrophysics Data System (ADS)

Dou, Yuanyao; Wu, Fang; Fang, Liang; Liu, Gaobin; Mao, Caiying; Wan, Kai; Zhou, Miao

2016-03-01

Ultralong and highly crystalline rhombohedral Bi2Te3 nanotubes were fabricated by a two-step solution phase reaction. A novel photoanode architecture has been fabricated by embedding 0-2.5 wt.% Bi2Te3 nanotubes into ZnO nanoparticles. The photocurrent density-voltage (J-V) characteristics reveal that the dye sensitized solar cells (DSSCs) with Bi2Te3/ZnO composite photoanode exhibit significantly enhanced photovoltaic performance. Notably, the DSSC incorporating 1.5 wt.% Bi2Te3 in the ZnO photoanode demonstrates an energy conversion efficiency (η) of 4.27%, which is 44.3% higher than that of the bare ZnO photoanode. The electrochemical impedance spectroscopy (EIS) analysis shows that the Bi2Te3 nanotubes can provide a direct pathway for electron transportation, prolong the lifetime of electrons, suppress the charge recombination and improve the electron collection efficiency. The thermoelectric effect analysis indicates that with the increase of irradiation time, Bi2Te3/ZnO composite photoanode could convert both heat and photon energies to electrical energy simultaneously and slow down the decline of η. The calculated electron density (ns) further proves that the increment of short-circuit current density (Jsc) is attributed to Seebeck effect in the composite photoanode. These results suggest that compositing 1D thermoelectric nano-materials in photoanode is a promising route to improve the performance of DSSCs.

Pt-decorated zinc oxide nanorod arrays with graphitic carbon nitride nanosheets for highly efficient dual-functional gas sensing.

PubMed

Tian, Hailin; Fan, Huiqing; Ma, Jiangwei; Liu, Zhiyong; Ma, Longtao; Lei, Shenhui; Fang, Jiawen; Long, Changbai

2018-01-05

In this work, well-aligned ZnO nanorods were grown on the substrate of exfoliated g-C 3 N 4 nanosheets via a microwave-assisted hydrothermal synthesis, and then Pt/ZnO/g-C 3 N 4 nanostructures were obtained after the deposition of Pt nanoparticles. The growth of vertically ordered ZnO nanorods was occurred on g-C 3 N 4 nanosheets through the bonding interaction between Zn and N atoms, which was confirmed by XPS, FT-IR data and molecular orbital theory. The Pt/ZnO/g-C 3 N 4 nanostructures sensor exhibited the remarkable sensitivity, selectivity, and fast response/recovery time for air pollutants of ethanol and NO 2 . The application of Pt/ZnO/g-C 3 N 4 nanostructures could be used as a dual-functional gas sensor through the controlled working temperature. Besides, the Pt/ZnO/g-C 3 N 4 nanostructures sensor could be applied to the repeating detection of ethanol and NO 2 in the natural environment. The synergistic effect and improved the separation of electron-hole pairs in Pt/ZnO/g-C 3 N 4 nanostructures had been verified for the gas sensing mechanism. Additionally, Pt/ZnO/g-C 3 N 4 nanostructures revealed the excellent charge carriers transport properties in electrochemical impedance spectroscopy (EIS), such as the longer electron lifetime (τ n ), higher electron diffusion coefficient (D n ) and bigger effective diffusion length (L n ), which also played an important role for Pt/ZnO/g-C 3 N 4 nanostructures with striking gas sensing activities. Copyright © 2017 Elsevier B.V. All rights reserved.

Major and minor oxide and trace element determination in silicate rocks by direct current plasma optical emission echelle spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bankston, D.C.; Humphris, S.E.; Thompson, G.

1979-07-01

A technique for the determination of major concentrations of SiO/sub 2/, Al/sub 2/O/sub 3/, Fe/sub 2/O/sub 3/, MgO, CaO, Na/sub 2/O, and K/sub 2/O, minor levels of TiO/sub 2/, P/sub 2/O/sub 5/, and MnO, and trace concentrations of Ba, Cr, Cu, Ni, Sr, V, and Zn, in semi-microsamples 200 mg) of powdered whole rock, is described. Chemically diverse standard reference rocks are used both for calibration and assessment of accuracy. A lithium metaborate fusion melt of each standard or sample is dissolved in dilute HNO/sub 3/ containing Cs/sup +/ at a level of 0.2% (w/v). The resulting solution is usedmore » to perform all analyses except those for Na/sub 2/O and K/sub 2/O, which are determined in a portion of the original sample solution wherein the Cs/sup +/ concentration has been raised to 0.32% (w/v). Analyses of both portions of each sample solution are performed using an optical emission spectrometer/spectrograph equipped with an echelle monochromator and a dc argon plasma excitation source. Trace element detection limits ranged from 2 ppM for Cu to 15 ppM for Zn. A study of precision based on replicate determinations in three splits of the proposed USGS reference basalt BHVO-1 yielded the following results: (1) For analyses of the major and minor oxide constituents, values of the percent relative standard deviation (RSD) ranged from 1 for CaO, to 21 for P/sub 2/O/sub 5/. 2) For trace element determinations, values of the RSD ranged from 2 for Cu, to 19 for Zn. 2 figures, 11 tables.« less

Surface compositions of atomic layer deposited Zn{sub 1−x}Mg{sub x}O thin films studied using Auger electron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Ting; Romero, Danilo; Gomez, Romel D., E-mail: rdgomez@umd.edu

2015-09-15

In this paper, the authors present Auger electron spectroscopy (AES) studies of Zn{sub 1−x}Mg{sub x}O (ZMO) films grown via interrupted atomic-layer deposition (ALD) techniques. The ZMO films were fabricated by alternating ALD deposition of ZnO and MgO layers up to 1000 cycles. Zn{sub 1−x}Mg{sub x}O films with progressively decreasing Mg/Zn ratios (Mg/Zn = 1/1, 1/2, 1/3, 1/4, 1/5, 1/6, 1/9, and 2/8, 3/12, 4/16, and 5/20) were fabricated for this study. The AES results exhibit an abrupt drop of Mg composition on the ZMO surface when the Mg/Zn < 1/3. Additionally, the surface composition ratios of O to Mg, O to Zn, and Mgmore » to Zn were estimated with known Auger sensitivity factors. The results indicate that Mg ions diffuse into the bulk, forming Zn{sub 1−x}Mg{sub x}O alloys.« less

A flexible 1,8-naphthyridyl derivative and its Zn(II) complexes: synthesis, structures, spectroscopic properties and recognition of Cd(II).

PubMed

Zhang, Hui-Miao; Fu, Wen-Fu; Gan, Xin; Xu, Yan-Qing; Wang, Jun; Xu, Quan-Qing; Chi, Shao-Ming

2008-12-21

A flexible ligand bis(7-methyl-1,8-naphthyridine-2-ylamino)methane (), having kappa(4)-chelating and kappa(2)-bridging modes, and its intriguing structural complexes of Zn(II) with mu-OH, kappa(1)-OAc, mu-kappa(1)-OAc and mu-kappa(2)-OAc ligands, [Zn(2)()(2)(OH)](ClO(4))(3) (), [Zn(4)()(2)(OAc)(6)(OH)(2)].CH(2)Cl(2) (.CH(2)Cl(2)) and [Zn(5)()(2)(OAc)(10)](n).4nH(2)O (.4H(2)O) were synthesized and their structures were determined by X-ray crystallography. These compounds exhibited intense blue fluorescent emissions with a lambda(max) in the range of 380-410 nm in CH(2)Cl(2), CH(3)CN and CH(3)OH solutions, and solid-state emissions centered at 416, 463, 490 and 451 nm were observed for the compounds , , and at room temperature, respectively. The investigated fluorescence properties of associated with various metal ions showed that the fluorescence enhancement of with Cd(II) was more sensitive than with other interfering cations.

Synthesis, structural, optical and dielectric properties of transition metal doped ZnMnO nanoparticles by sol-gel combustion technique

NASA Astrophysics Data System (ADS)

Dar, M. A.; Varshney, Dinesh

2018-02-01

Nanocrystalline samples of Zn0.94Mn0.06O and transition metal (TM) doped Zn0.94Mn0.01TM0.05O (TM = Co, Ni, and Cu) were prepared by sol-gel auto combustion method. X-ray diffraction (XRD) pattern infers that all synthesized samples except Zn0.94Mn0.01Ni0.05O and Zn0.94Mn0.01Cu0.05O with secondary phases of NiO and CuO are in single phase with hexagonal wurtzite structure (P63mc space group). Raman spectroscopy reveals four vibrational phonon modes are centered at 331, 380, 410, and 438 cm-1, assigned as E2 (H)-E2(L), A1(TO), E1(TO), and E1(LO) modes, respectively. A Raman spectrum of Zn0.94Mn0.01TM0.05O is entirely different from undoped Zn0.94Mn0.06O sample. Also, the infrared spectrum of transition metal doped samples is completely different from undoped Zn0.94Mn0.06O. Similar spectra are observed for Zn0.94Mn0.01Co0.05O, Zn0.94Mn0.01NiO, Zn0.94Mn0.01Cu0.05O and Zn0.94Mn0.01Zn0.05O samples. It was found that the band gap of Zn0.94Mn0.06O increased from 3.19 to 3.25eV by doping 5% transition metal oxide. Improved dielectric constant and reduced dielectric loss is measured for Zn0.94Mn0.01Ni/Cu0.05O as compared to Zn0.94Mn0.06O.

Preparation of TiO2 Nanocrystallite Powders Coated with 9 mol% ZnO for Cosmetic Applications in Sunscreens

PubMed Central

Ko, Horng-Huey; Chen, Hui-Ting; Yen, Feng-Ling; Lu, Wan-Chen; Kuo, Chih-Wei; Wang, Moo-Chin

2012-01-01

The preparation of TiO2 nanocrystallite powders coated with and without 9 mol% ZnO has been studied for cosmetic applications in sunscreens by a co-precipitation process using TiCl4 and Zn(NO3)2·6H2O as starting materials. XRD results show that the phases of anatase TiO2 and rutile TiO2 coexist for precursor powders without added ZnO (T-0Z) and calcined at 523 to 973 K for 2 h. When the T-0Z precursor powders are calcined at 1273 K for 2 h, only the rutile TiO2 appears. In addition, when the TiO2 precursor powders contain 9 mol% ZnO (T-9Z) are calcined at 873 to 973 K for 2 h, the crystallized samples are composed of the major phase of rutile TiO2 and the minor phases of anatase TiO2 and Zn2Ti3O8. The analyses of UV/VIS/NIR spectra reveal that the absorption of the T-9Z precursor powders after being calcined has a red-shift effect in the UV range with increasing calcination temperature. Therefore, the TiO2 nanocrystallite powders coated with 9 mol% ZnO can be used as the attenuate agent in the UV-A region for cosmetic applications in sunscreens. PMID:22408415

Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

NASA Astrophysics Data System (ADS)

Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

2016-12-01

We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

Metallic ions catalysis for improving bioleaching yield of Zn and Mn from spent Zn-Mn batteries at high pulp density of 10.

PubMed

Niu, Zhirui; Huang, Qifei; Wang, Jia; Yang, Yiran; Xin, Baoping; Chen, Shi

2015-11-15

Bioleaching of spent batteries was often conducted at pulp density of 1.0% or lower. In this work, metallic ions catalytic bioleaching was used for release Zn and Mn from spent ZMBs at 10% of pulp density. The results showed only Cu(2+) improved mobilization of Zn and Mn from the spent batteries among tested four metallic ions. When Cu(2+) content increased from 0 to 0.8 g/L, the maximum release efficiency elevated from 47.7% to 62.5% for Zn and from 30.9% to 62.4% for Mn, respectively. The Cu(2+) catalysis boosted bioleaching of resistant hetaerolite through forming a possible intermediate CuMn2O4 which was subject to be attacked by Fe(3+) based on a cycle of Fe(3+)/Fe(2+). However, poor growth of cells, formation of KFe3(SO4)2(OH)6 and its possible blockage between cells and energy matters destroyed the cycle of Fe(3+)/Fe(2+), stopping bioleaching of hetaerolite. The chemical reaction controlled model fitted best for describing Cu(2+) catalytic bioleaching of spent ZMBs. Copyright © 2015 Elsevier B.V. All rights reserved.

Multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 layers for tunable applications

PubMed Central

Yu, Shihui; Li, Lingxia; Zhang, Weifeng; Sun, Zheng; Dong, Helei

2015-01-01

The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability = 49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin–film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500 kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices. PMID:25960043

Optical and Structural Characterization of ZnO/TiO2 Bilayer Thin Films Grown by Sol-Gel Spin Coating

NASA Astrophysics Data System (ADS)

Gareso, P. L.; Musfitasari; Juarlin, Eko

2018-03-01

Structural and optical properties of ZnO/TiO2 bilayers thin films have been investigated using x-ray diffraction (X-RD), scanning electron microscopy (SEM), and optical transmittance UV-Vis measurements. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of ethanol and then added triethanolamin. In the case of TiO2 layers, tetraisoproxide was dissolved into ethanol and then added an acetate acid. The layer of ZnO was deposited first followed by TiO2 layer on a glass substrate using a spin coating technique. The ZnO/TiO2 bilayers were annealed at various temperatures from 300°C until 600°C for 60 minutes. The X-ray diffraction results show that there was an enhancement of the x-ray spectra as annealed temperature increased to 600°C in comparison to the samples that were annealed at 300°C. Based on the optical measurement of UV-Vis, the band gap energy of ZnO/TiO2 bilayer is around 3.2 eV at temperature of 300°C. This value is similar to the band gap energy of ZnO. SEM results show that there is no cluster in the surface of ZnO/TiO2 bilayer.

Photoluminescence of transparent glass-ceramics based on ZnO nanocrystals and co-doped with Eu3+, Yb3+ ions

NASA Astrophysics Data System (ADS)

Arzumanyan, Grigory M.; Kuznetsov, Evgeny A.; Zhilin, Aleksandr A.; Dymshits, Olga S.; Shemchuk, Daria V.; Alekseeva, Irina P.; Mudryi, Alexandr V.; Zhivulko, Vadim D.; Borodavchenko, Olga M.

2016-12-01

Glasses of the K2Osbnd ZnOsbnd Al2O3sbnd SiO2 system co-doped with Eu2O3 and Yb2O3 were prepared by the melt-quenching technique. Transparent zincite (ZnO) glass-ceramics were obtained by secondary heat-treatments at 680-860 °C. At 860 °C, traces of Eu oxyapatite appeared in addition to ZnO nanocrystals. The average crystal size obtained from the X-ray diffraction data was found to range between 14 and 35 nm. Absorption spectra of the initial glasses are composed of an absorption edge and absorption bands due to electronic transitions of Eu3+ ions. With heat-treatment, the absorption edge pronouncedly shifts to the visible spectral range. The luminescence properties of the glass and glass-ceramics were studied by measuring their excitation and emission spectra at 300, 78, and 4.2 K. Strong red emission of Eu3+ ions dominated by the 5D0-7F2 (612 nm) electric dipole transition was detected. Changes in the luminescence properties of the Eu3+-related excitation and emission bands were observed after heat-treatments at 680 °C and 860 °C. The ZnO nanocrystals showed both broad luminescence (400-850 nm) and free-exciton emission near 3.3 eV at room temperature. The upconversion luminescence spectrum of the initial glass was obtained under excitation of the 976 nm laser source.

Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method

NASA Astrophysics Data System (ADS)

Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

2018-05-01

Nickel (Ni)-doped zinc oxide (ZnO) nanorod array films were synthesised using sonicated sol-gel immersion method. The FESEM images showed that the Ni-doped ZnO nanorod arrays possess hexagonal shape with average diameter about 120 nm and thickness about 1.10 µm. The Ni-doped ZnO nanorod arrays possess better transmittance properties with 3.27 eV of optical band gap energy and 40 meV of urbach energy. The current-voltage (I-V) measurement indicated that the conductivity of ZnO film slightly improved with Ni-doping. The doped film displayed good humidity sensing performance with sensitivity of 1.21.

Cation substitution in synthetic meridianiite (MgSO4·11H2O) I: X-ray powder diffraction analysis of quenched polycrystalline aggregates

NASA Astrophysics Data System (ADS)

Fortes, A. Dominic; Browning, Frank; Wood, Ian G.

2012-05-01

Meridianiite, MgSO4·11H2O, is the most highly hydrated phase in the binary MgSO4-H2O system. Lower hydrates in the MgSO4-H2O system have end-member analogues containing alternative divalent metal cations (Ni2+, Zn2+, Mn2+, Cu2+, Fe2+, and Co2+) and exhibit extensive solid solution with MgSO4 and with one another, but no other undecahydrate is known. We have prepared aqueous MgSO4 solutions doped with these other cations in proportions up to and including the pure end-members. These liquids have been solidified into fine-grained polycrystalline blocks of metal sulfate hydrate + ice by rapid quenching in liquid nitrogen. The solid products have been characterised by X-ray powder diffraction, and the onset of partial melting has been quantified using a thermal probe. We have established that of the seven end-member metal sulfates studied, only MgSO4 forms an undecahydrate; ZnSO4 forms an orthorhombic heptahydrate (synthetic goslarite), MnSO4, FeSO4, and CoSO4 form monoclinic heptahydrates (syn. mallardite, melanterite, bieberite, respectively), and CuSO4 crystallises as the well-known triclinic pentahydrate (syn. chalcanthite). NiSO4 forms a new hydrate which has been indexed with a triclinic unit cell of dimensions a = 6.1275(1) Å, b = 6.8628(1) Å, c = 12.6318(2) Å, α = 92.904(2)°, β = 97.678(2)°, and γ = 96.618(2)°. The unit-cell volume of this crystal, V = 521.74(1) Å3, is consistent with it being an octahydrate, NiSO4·8H2O. Further analysis of doped specimens has shown that synthetic meridianiite is able to accommodate significant quantities of foreign cations in its structure; of the order 50 mol. % Co2+ or Mn2+, 20-30 mol. % Ni2+ or Zn2+, but less than 10 mol. % of Cu2+ or Fe2+. In three of the systems we examined, an `intermediate' phase occurred that differed in hydration state both from the Mg-bearing meridianiite end-member and the pure dopant end-member hydrate. In the case of CuSO4, we observed a melanterite-structured heptahydrate at Cu/(Cu + Mg) = 0.5, which we identify as synthetic alpersite [(Mg0.5Cu0.5)SO4·7H2O)]. In the NiSO4- and ZnSO4-doped systems we characterised an entirely new hydrate which could also be identified to a lesser degree in the CuSO4- and the FeSO4-doped systems. The Ni-doped substance has been indexed with a monoclinic unit-cell of dimensions a = 6.7488(2) Å, b = 11.9613(4) Å, c = 14.6321(5) Å, and β = 95.047(3)°, systematic absences being indicative of space-group P21/ c with Z = 4. The unit-cell volume, V = 1,176.59(5) Å3, is consistent with it being an enneahydrate [i.e. (Mg0.5Ni0.5)SO4·9H2O)]. Similarly, the new Zn-bearing enneahydrate has refined unit cell dimensions of a = 6.7555(3) Å, b = 11.9834(5) Å, c = 14.6666(8) Å, β = 95.020(4)°, V = 1,182.77(7) Å3, and the new Fe-bearing enneahydrate has refined unit cell dimensions of a = 6.7726(3) Å, b = 12.0077(3) Å, c = 14.6920(5) Å, β = 95.037(3)°, and V = 1,190.20(6) Å3. The observation that synthetic meridianiite can form in the presence of, and accommodate significant quantities of other ions increases the likelihood that this mineral will occur naturally on Mars—and elsewhere in the outer solar system—in metalliferous brines.

Evaluating photo-degradation of COD and TOC in petroleum refinery wastewater by using TiO2/ZnO photo-catalyst.

PubMed

Aljuboury, Dheeaa Al Deen Atallah; Palaniandy, Puganeshwary; Abdul Aziz, Hamidi Bin; Feroz, Shaik; Abu Amr, Salem S

2016-09-01

The aim of this study is to investigate the performance of combined solar photo-catalyst of titanium oxide/zinc oxide (TiO 2 /ZnO) with aeration processes to treat petroleum wastewater. Central composite design with response surface methodology was used to evaluate the relationships between operating variables for TiO 2 dosage, ZnO dosage, air flow, pH, and reaction time to identify the optimum operating conditions. Quadratic models for chemical oxygen demand (COD) and total organic carbon (TOC) removals prove to be significant with low probabilities (<0.0001). The obtained optimum conditions included a reaction time of 170 min, TiO 2 dosage (0.5 g/L), ZnO dosage (0.54 g/L), air flow (4.3 L/min), and pH 6.8 COD and TOC removal rates of 99% and 74%, respectively. The TOC and COD removal rates correspond well with the predicted models. The maximum removal rate for TOC and COD was 99.3% and 76%, respectively at optimum operational conditions of TiO 2 dosage (0.5 g/L), ZnO dosage (0.54 g/L), air flow (4.3 L/min), reaction time (170 min) and pH (6.8). The new treatment process achieved higher degradation efficiencies for TOC and COD and reduced the treatment time comparing with other related processes.

ZnO Thin Film Electronics for More than Displays

NASA Astrophysics Data System (ADS)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow discharging time constants. Finally, to circumvent fabrication challenges on predetermined complex shapes, like curved mirror optics, a technique to transfer electronics from a rigid substrate to a flexible substrate is used. This technique allows various thin films, regardless of their deposition temperature, to be transferred to flexible substrates. Finally, ultra-low power operation of ZnO TFT gas sensors was demonstrated. The ZnO ozone sensors were optimized to operate with excellent electrical stability in ambient conditions, without using elevated temperatures, while still providing good gas sensitivity. This was achieved by using a post-deposition anneal and by partially passivating the contact regions while leaving the semiconductor sensing area open to the ambient. A novel technique to reset the gas sensor using periodic pulsing of a UV light over the sensor results in less than 25 milliseconds recovery time. A pathway to achieve gas selectivity by using organic thin-film layers as filters deposited over the gas sensors tis demonstrated. The ZnO ozone sensor TFTs and the UV light operate at room temperature with an average power below 1 muW.

Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maaloul, L.; Gangwar, R. K.; Stafford, L., E-mail: luc.stafford@umontreal.ca

2015-07-15

A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over themore » whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.« less

Cu2+ ions as a paramagnetic probe to study the surface chemical modification process of layered double hydroxides and hydroxide salts with nitrate and carboxylate anions.

PubMed

Arizaga, Gregorio Guadalupe Carbajal; Mangrich, Antonio Salvio; Wypych, Fernando

2008-04-01

A layered zinc hydroxide nitrate (Zn5(OH)8(NO3)2.2H2O) and a layered double hydroxide (Zn/Al-NO3) were synthesized by coprecipitation and doped with different amounts of Cu2+ (0.2, 1, and 10 mol%), as paramagnetic probe. Although the literature reports that the nitrate ion is free (with D3h symmetry) between the layers of these two structures, the FTIR spectra of two zinc hydroxide nitrate samples show the C2v symmetry for the nitrate ion, whereas the g ||/A || value in the EPR spectra of Cu2+ is high. This fact suggests bonding of some nitrate ions to the layers of the zinc hydroxide nitrate. The zinc hydroxide nitrate was used as matrix in the intercalation reaction with benzoate, o-chlorobenzoate, and o-iodobenzoate ions. FTIR spectra confirm the ionic exchange reaction and the EPR spectroscopy reveals bonding of the organic ions to the inorganic layers of the zinc hydroxide nitrate, while the layered double hydroxides show only exchange reactions.

Preparation of TiO₂ nanocrystallite powders coated with 9 mol% ZnO for cosmetic applications in sunscreens.

PubMed

Ko, Horng-Huey; Chen, Hui-Ting; Yen, Feng-Ling; Lu, Wan-Chen; Kuo, Chih-Wei; Wang, Moo-Chin

2012-01-01

The preparation of TiO(2) nanocrystallite powders coated with and without 9 mol% ZnO has been studied for cosmetic applications in sunscreens by a co-precipitation process using TiCl(4) and Zn(NO(3))(2)·6H(2)O as starting materials. XRD results show that the phases of anatase TiO(2) and rutile TiO(2) coexist for precursor powders without added ZnO (T-0Z) and calcined at 523 to 973 K for 2 h. When the T-0Z precursor powders are calcined at 1273 K for 2 h, only the rutile TiO(2) appears. In addition, when the TiO(2) precursor powders contain 9 mol% ZnO (T-9Z) are calcined at 873 to 973 K for 2 h, the crystallized samples are composed of the major phase of rutile TiO(2) and the minor phases of anatase TiO(2) and Zn(2)Ti(3)O(8). The analyses of UV/VIS/NIR spectra reveal that the absorption of the T-9Z precursor powders after being calcined has a red-shift effect in the UV range with increasing calcination temperature. Therefore, the TiO(2) nanocrystallite powders coated with 9 mol% ZnO can be used as the attenuate agent in the UV-A region for cosmetic applications in sunscreens.

Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method

NASA Astrophysics Data System (ADS)

Merih Akyuzlu, A.; Dagdelen, Fethi; Gultek, Ahmet; Hendi, A. A.; Yakuphanoglu, Fahrettin

2017-04-01

ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M {Ω} , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications.

Detection of Glutathione by Glutathione-S-Transferase-Nanoconjugate Ensemble Electrochemical Device.

PubMed

Barman, Ujjwol; Mukhopadhyay, Gargi; Goswami, Namami; Ghosh, Siddhartha Sankar; Paily, Roy P

2017-06-01

This paper reports a novel electrochemical method for detection of Glutathione (GSH) using Glutathione-S-Transferase (GST) - ZnO composite nanoparticles to investigate the prospects of the method for detection of cancer at an early stage. The purified GST enzyme was bound with ZnO nanoparticles by electrostatic interactions and the nanocomposite was dropcast on a silicon dioxide wafer. The GST functionalized deposited layer was then used as a chemiresistive channel to detect conjugation reaction between GSH and 1-Chloro-2, 4-Dinitrobenzene (CDNB). The zeta potential values of the ZnO nanoparticles and the GST were found to be 13.4 mV and-6.21 mV, respectively. Around 73.8% binding was observed between the enzyme and ZnO nanoparticles. I - V analysis of the chemiresistive channel showed an increase in conductivity of the channel due to conjugation reaction between GSH and CDNB as compared with that of GSH or CDNB alone. I - V characterization of the GST functionalized layer was performed at various concentrations of GSH and a sensitivity and limit of detection of 5.68 nA/ [Formula: see text] and 41.9 nM were obtained, respectively. Thus from I - V analysis of the chemiresistivechannel, the detectionand quantification of GSH could be obtained. The kinetic parameters of both GST and nanoconjugate of ZnO nanoparticles andGSTwere determinedwith respect to its substrates, GSH and CDNB, using Michaelis-Mentenmodel. This novel approach of detection of GSH bymeans of ZnO nanoparticle and GST enzyme composite can be further analyzed for in vitro experiments, which will lead us to a new and efficient way of detecting certain types of cancers at an early stage.

Hydrogen-related complexes in Li-diffused ZnO single crystals

DOE PAGES

Corolewski, Caleb D.; Parmar, Narendra S.; Lynn, Kelvin G.; ...

2016-07-21

Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li 2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10 19 cm -3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm -1, attributed to surface O-H species. When Li 2COmore » 3 is used, a structured blue luminescence band and O-H mode at 3327 cm -1 are observed at 10K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level 0.3 eV above the valence-band maximum. In conclusion, this relatively shallow acceptor could be beneficial for p-type ZnO.« less

Zircon Supported Copper Catalysts for the Steam Reforming of Methanol

NASA Astrophysics Data System (ADS)

Widiastri, M.; Fendy, Marsih, I. N.

2008-03-01

Steam reforming of methanol (SRM) is known as one of the most favorable catalytic processes for producing hydrogen. Current research on zirconia, ZrO2 supported copper catalyst revealed that CuO/ZrO2 as an active catalyst for the SRM. Zircon, ZrSiO4 is available from the by-product of tin mining. In the work presented here, the catalytic properties of CuO/ZrSiO4 with various copper oxide compositions ranging from 2.70% (catalyst I), 4.12% (catalyst II), and 7.12%-mass (catalyst III), synthesized by an incipient wetness impregnation technique, were investigated to methanol conversion, selectivity towards CO formation, and effect of ZnO addition (7.83%CuO/8.01%ZnO/ZrSiO4 = catalyst V). The catalytic activity was obtained using a fixed bed reactor and the zircon supported catalyst activity was compared to those of CuO/ZnO/Al2O3 catalyst (catalyst IV) and commercial Kujang LTSC catalyst. An X-ray powder diffraction (XRD) analysis was done to identify the abundant phases of the catalysts. The catalysts topography and particle diameter were measured with scanning electron microscopy (SEM) and composition of the catalysts was measured by SEM-EDX, scanning electron microscope-energy dispersive using X-ray analysis. The results of this research provide information on the possibility of using zircon (ZrSiO4) as solid support for SRM catalysts.

Au/ZnO hybrid nanocatalysts impregnated in N-doped graphene for simultaneous determination of ascorbic acid, acetaminophen and dopamine.

PubMed

Chen, Xianlan; Zhang, Guowei; Shi, Ling; Pan, Shanqing; Liu, Wei; Pan, Hiabo

2016-08-01

The formation of nitrogen-doped (N-doped) graphene uses hydrothermal method with urea as reducing agent and nitrogen source. The surface elemental composition of the catalyst was analyzed through XPS, which showed a high content of a total N species (7.12at.%), indicative of the effective N-doping, present in the form of pyridinic N, pyrrolic N and graphitic N groups. Moreover, Au nanoparticles deposited on ZnO nanocrystals surface, forming Au/ZnO hybrid nanocatalysts, undergo a super-hydrophobic to super-hydrophilic conversion. Herein, we present Au/ZnO hybrid nanocatalysts impregnated in N-doped graphene sheets through sonication technique of the Au/ZnO/N-doped graphene hybrid nanostructures. The as-prepared Au/ZnO/N-doped graphene hybrid nanostructure modified glassy carbon electrode (Au/ZnO/N-doped graphene/GCE) was first employed for the simultaneous determination of ascorbic acid (AA), dopamine (DA) and acetaminophen (AC). The oxidation over-potentials of AA, DA and AC decreased dramatically, and their oxidation peak currents increased significantly at Au/ZnO/N-doped graphene/GCE compared to those obtained at the N-doped graphene/GCE and bare CCE. The peak separations between AA and DA, DA and AC, and AC and AA are large up to 195, 198 and 393mV, respectively. The calibration curves for AA, DA and AC were obtained in the range of 30.00-13.00×10(3), 2.00-0.18×10(3) and 5.00-3.10×10(3)μM, respectively. The detection limits (S/N=3) were 5.00, 0.40 and 0.80μM for AA, DA and AC, respectively. Copyright © 2016 Elsevier B.V. All rights reserved.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

PubMed

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

Multi-angle ZnO microstructures grown on Ag nanorods array for plasmon-enhanced near-UV-blue light emitter

NASA Astrophysics Data System (ADS)

Pal, Anil Kumar; Bharathi Mohan, D.

2017-10-01

Metal enhanced ultraviolet light emission has been explored in ZnO/Ag hybrid structures prepared by hydrothermal growth of multi-angled ZnO nanorods on slanted Ag nanorods array fabricated by the thermal evaporation technique. Slanted Ag nanorods are realized to be the stacking of non-spherical Ag nanoparticles, resulting in asymmetric surface plasmon resonance spectra. The surface roughness of Ag nanorod array films significantly influences the growth mechanism of ZnO nanorods, leading to the formation of multi-angled ZnO microflowers. ZnO/Ag hybrid structures facilitate the interfacial charge transfer from Ag to ZnO with the realization of negative shift in binding energy of Ag 3d orbitals by ˜0.8 eV. These high quality ZnO nanorods in ZnO/Ag hybrid nanostructures exhibit strong ultraviolet emission in the 383-396 nm region without broad deep level emission, which can be explained by a suitable band diagram. The metal enhanced photoluminescence is witnessed mainly due to interfacial charge transfer with its dependence on surface roughness of bottom layer Ag nanorods, number density of ZnO nanorods and diversity in the interfacial area between Ag and ZnO nanorods. The existence of strong ultraviolet light with minor blue light emission and appearance of CIE shade in strong violet-blue region by ZnO/Ag hybrid structures depict exciting possibilities towards near UV-blue light emitting devices.

Multi-angle ZnO microstructures grown on Ag nanorods array for plasmon-enhanced near-UV-blue light emitter.

PubMed

Pal, Anil Kumar; Mohan, D Bharathi

2017-10-13

Metal enhanced ultraviolet light emission has been explored in ZnO/Ag hybrid structures prepared by hydrothermal growth of multi-angled ZnO nanorods on slanted Ag nanorods array fabricated by the thermal evaporation technique. Slanted Ag nanorods are realized to be the stacking of non-spherical Ag nanoparticles, resulting in asymmetric surface plasmon resonance spectra. The surface roughness of Ag nanorod array films significantly influences the growth mechanism of ZnO nanorods, leading to the formation of multi-angled ZnO microflowers. ZnO/Ag hybrid structures facilitate the interfacial charge transfer from Ag to ZnO with the realization of negative shift in binding energy of Ag 3d orbitals by ∼0.8 eV. These high quality ZnO nanorods in ZnO/Ag hybrid nanostructures exhibit strong ultraviolet emission in the 383-396 nm region without broad deep level emission, which can be explained by a suitable band diagram. The metal enhanced photoluminescence is witnessed mainly due to interfacial charge transfer with its dependence on surface roughness of bottom layer Ag nanorods, number density of ZnO nanorods and diversity in the interfacial area between Ag and ZnO nanorods. The existence of strong ultraviolet light with minor blue light emission and appearance of CIE shade in strong violet-blue region by ZnO/Ag hybrid structures depict exciting possibilities towards near UV-blue light emitting devices.

Exciton localization and large Stokes shift in quaternary BeMgZnO grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Toporkov, Mykyta; Ullah, Md. Barkat; Hafiz, Shopan; Nakagawara, Tanner; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2016-02-01

Owing to wide range bandgap tunability to more than 5 eV, the quaternary (Be,Mg)ZnO solid solutions are attractive for a variety of UV optoelectronic applications, inclusive of solar blind photodetectors, and intersubband transition devices. The mutual compensation effects of Be and Mg on the formation energy and strain allows a wide range of compositions and bandgaps beyond those achievable by MgZnO and BeZnO ternaries. Localization effects are well pronounced in such wide-bandgap semiconductor alloys due to large differences in metal covalent radii and the lattice constants of the binaries, resulting in strain-driven compositional variations within the film and consequently large potential fluctuations, in addition to that possibly caused by defects. However, carrier localization may suppress recombination through nonradiative channels, and thus, facilitate high-efficiency optoelectronic devices. To investigate potential fluctuations and localization in BexMgyZn(1-x-y)O films grown by plasma-assisted molecular beam epitaxy, optical absorption and steady-state and time-resolved photoluminescence (PL) measurements were performed. O-polar BexMgyZn(1-x-y)O samples grown on GaN templates with compositions up to x = 0.04 and y = 0.18 were used for timeresolved studies, and O-polar BexMgyZn(1-x-y)O samples grown on sapphire with compositions up to x = 0.19 and y = 0.52 were used for absorption measurements. From spectrally resolved PL transients, BeMgZnO samples with higher Mg/Be content ratio were found to exhibit smaller localization depth, Δ0=98 meV for Be0.04Mg0.17Zn0.79O and Δ0=173 meV for Be0.10Mg0.25Zn0.65O, compared to samples with smaller Mg/Be ratio, Δ0=268 meV for Be0.11Mg0.15Zn0.74O. Similar correlation is observed in temporal redshift of the PL peak position of 8 meV, 42 meV and 55 meV for Be0.04Mg0.17Zn0.79O, Be0.10Mg0.25Zn0.65O and Be0.11Mg0.15Zn0.74O, respectively, that originates from potential fluctuations and removal of band filling effect in the localized states. PL transients indicate that emission at low temperature is dominated by recombination of localized excitons, which exhibit decay times as long as τ = 0.36 ns at the peak position. The Sshaped behavior of PL peak with change in temperature was observed for the quaternary alloy Be0.04Mg0.17Zn0.79O. The degree of localization σ was determined to be 22 meV. Relatively high potential fluctuations and localization energy lead to a strong Stokes shift, which increased with bandgap reaching ~0.5 eV for O-polar BeMgZnO on sapphire with 4.6 eV absorption edge.

Determination of the spinel group end-members based on electron microprobe analyses

NASA Astrophysics Data System (ADS)

Ferracutti, Gabriela R.; Gargiulo, M. Florencia; Ganuza, M. Luján; Bjerg, Ernesto A.; Castro, Silvia M.

2015-04-01

The spinel group minerals have been the focus of many studies, not only because of their economic interest, but also due to the fact that they are very useful as petrogenetic indicators. The application End-Members Generator (EMG) allows to establish, based on electron microprobe analyses (EMPA), the 19 end-members of the spinel group: MgAl2O4 (Spinel sensu stricto, s.s.), FeAl2O4 (Hercynite), MnAl2O4 (Galaxite), ZnAl2O4 (Gahnite), MgFe2O4 (Magnesioferrite), Fe3O4 (Magnetite), MnFe2O4 (Jacobsite), ZnFe2O4 (Franklinite), NiFe2O4 (Trevorite), MgCr2O4 (Magnesiochromite), FeCr2O4 (Chromite), MnCr2O4 (Manganochromite), ZnCr2O4 (Zincochromite), NiCr2O4 (Nichromite), MgV2O4 (Magnesiocoulsonite), FeV2O4 (Coulsonite), MnV2O4 (Vuorelainenite), Mg2TiO4 (Qandilite) and Fe2TiO4 (Ulvöspinel). EMG is an application that does not require an installation process and was created with the purpose of performing calculations to obtain: cation proportions (per formula unit, p.f.u.), end-members of the spinel group, redistribution proportions for the corresponding end-members in the Magnetite prism or Ulvöspinel prism and a data validation section to check the results. EMG accepts .csv data files and the results obtained can be used to represent a given dataset with the SpinelViz program or any other 2D and/or 3D graph plotting software.

Trace amounts of Cu²⁺ ions influence ROS production and cytotoxicity of ZnO quantum dots.

PubMed

Moussa, Hatem; Merlin, Christophe; Dezanet, Clément; Balan, Lavinia; Medjahdi, Ghouti; Ben-Attia, Mossadok; Schneider, Raphaël

2016-03-05

3-Aminopropyltrimethoxysilane (APTMS) was used as ligand to prepare ZnO@APTMS, Cu(2+)-doped ZnO (ZnO:Cu@APTMS) and ZnO quantum dots (QDs) with chemisorbed Cu(2+) ions at their surface (ZnO@APTMS/Cu). The dots have a diameter of ca. 5 nm and their crystalline and phase purities and composition were established by X-ray diffraction, transmission electron microscopy, UV-visible and fluorescence spectroscopies and by X-ray photoelectron spectroscopy. The effect of Cu(2+) location on the ability of the QDs to generate reactive oxygen species (ROS) under light irradiation was investigated. Results obtained demonstrate that all dots are able to produce ROS (OH, O2(-), H2O2 and (1)O2) and that ZnO@APTMS/Cu QDs generate more OH and O2(-) radicals and H2O2 than ZnO@APTMS and ZnO:Cu@APTMS QDs probably via mechanisms associating photo-induced charge carriers and Fenton reactions. In cytotoxicity experiments conducted in the dark or under light exposure, ZnO@APTMS/Cu QDs appeared slightly more deleterious to Escherichia coli cells than the two other QDs, therefore pointing out the importance of the presence of Cu(2+) ions at the periphery of the nanocrystals. On the other hand, with the lack of photo-induced toxicity, it can be inferred that ROS production cannot explain the cytotoxicity associated to the QDs. Our study demonstrates that both the production of ROS from ZnO QDs and their toxicity may be enhanced by chemisorbed Cu(2+) ions, which could be useful for medical or photocatalytic applications. Copyright © 2015 Elsevier B.V. All rights reserved.

Zinc oxide wide band gap semiconductor for optoelectronic devices

NASA Astrophysics Data System (ADS)

Choopun, Supab

The main objective of this dissertation is to study the key aspects of ZnO-based materials for fabrication of wide band gap optoelectronic devices. ZnO has received attention due to its direct band gap, alloying and doping capabilities. It has similar properties to that of GaN, a material system that has become very important for the fabrication of blue light emitting diodes, laser diodes, detectors, etc. In this study, ZnO and related materials were grown in thin film form on c-plane sapphire substrates by pulsed laser deposition and then, these films were mainly studied in terms of their structural, optical and electrical properties. The studied key aspects include growth and optimization of device quality ZnO films, band gap tailoring of ZnO films by alloying, fabrication of quantum well structures, and impurity doping for n-type and p-type ZnO films. The growth and optimization of ZnO films have been studied as a function of substrate temperature and oxygen background pressure. By tuning the growth temperature and oxygen pressure during the initial and final stages of growth, it was possible to control desirable surface, interface chemistry structure, crystalline quality, and optoelectronic properties of the films while maintaining high quality epitaxy. Band gap tailoring has been studied by alloying of ZnO with MgO. MgZnO alloy films exhibit two phases, hexagonal and cubic, depending on the Mg concentration in the MgZnO lattice. The band gap energy of MgZnO alloys can be varied in a wide range from 3.3 eV to 4.0 eV for hexagonal structured films and 4.0 to 7.6 eV for cubic structured films. Studies both n-type as well as p-type doping and activation in ZnO films are reported. It was found that In-doped ZnO films with high optical transparency and high electrical conductivity can be grown at temperature below 300°C. P-type ZnO films have been studied by using a cationic-codoping method. Weak p-type conductivity in ZnO films was obtained from Cu and Al codoping. A hole concentration of 1.4 x 1015 cm-3 in all-cationic codoped ZnO film was realized for the first time. In addition, some novel technological applications of ZnO films have also been realized. ZnO film was used as a buffer layer for the growth of III--V nitrides. Moreover, the wider band gap of MgZnO alloy film was used to fabricate single quantum well heterostructures of MgZnO/ZnO/MgZnO. We have also studied the optical lasing effect in ZnO films. Finally, possible future studies and applications on ZnO and related alloys are discussed.

Inert anode containing oxides of nickel, iron and zinc useful for the electrolytic production of metals

DOEpatents

Ray, Siba P.; Weirauch, Jr., Douglas A.; Liu, Xinghua

2002-01-01

An inert anode for the electrolytic production of metals such as aluminum is disclosed. The inert anode includes a ceramic oxide material preferably made from NiO, Fe.sub.2 O.sub.3 and ZnO. The inert anode composition may comprise the following mole fractions of NiO, Fe.sub.2 O.sub.3 and ZnO: 0.2 to 0.99 NiO; 0.0001 to 0.8 Fe.sub.2 O.sub.3 ; and 0.0001 to 0.3 ZnO. The inert anode may optionally include other oxides and/or at least one metal phase, such as Cu, Ag, Pd, Pt, Au, Rh, Ru, Ir and/or Os. The Ni--Fe--Co--O ceramic material exhibits very low solubility in Hall cell baths used to produce aluminum.

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

Synthesis, structure, vapour pressure and deposition of ZnO thin film by plasma assisted MOCVD technique using a novel precursor bis[(pentylnitrilomethylidine) (pentylnitrilomethylidine-μ-phenalato)]dizinc(II)

NASA Astrophysics Data System (ADS)

Chandrakala, C.; Sravanthi, P.; Raj Bharath, S.; Arockiasamy, S.; George Johnson, M.; Nagaraja, K. S.; Jeyaraj, B.

2017-02-01

A novel binuclear zinc schiff's base complex bis[(pentylnitrilomethylidine)(pentylnitrilomethylidine-μ-phenalato)]dizinc(II) (hereafter referred as ZSP) was prepared and used as a precursor for the deposition of ZnO thin film by MOCVD. The dynamic TG run of ZSP showed sufficient volatility and good thermal stability. The temperature dependence of vapour pressure measured by transpiration technique yielded a value of 55.8 ± 2.3 kJ mol-1 for the enthalpy of sublimation (ΔH°sub) in the temperature range of 423-503 K. The crystal structure of ZSP was solved by single crystal XRD which exhibits triclinic crystal system with the space group of Pī. The molecular mass of ZSP was determined by mass spectrometry which yielded the m/z value of 891 and 445 Da corresponding to its dimeric as well as monomeric form. The complex ZSP was further characterized by FT-IR and NMR. The demonstration of ZnO thin film deposition was carried out by using plasma assisted MOCVD. The thin film XRD confirmed the highly oriented (002) ZnO thin films on Si(100) substrate. The uniformity and composition of the thin film were analyzed by SEM/EDX. The band gap of ZnO thin film measurement indicated the blue shift with the value of 3.79 eV.

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

PubMed

Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

2018-03-05

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

Zinc oxide-mediated photocatalytic decolorization of Ponceau S in aqueous suspension by visible light

NASA Astrophysics Data System (ADS)

Muslim, Muhammad; Habib, Md Ahsan; Mahmood, Abu Jafar; Islam, Tajmeri Selima Akhter; Ismail, Iqbal Mohmmad Ibrahim

2012-10-01

ZnO, comprising nanosize particles (approximately 40 nm) has been prepared by heating (300°C) ZnCO3, which was obtained as precipitate by mixing ZnSO4 and (NH4)2CO3 solutions. The prepared ZnO was characterized by X-ray diffraction, scanning electron microscopy (SEM), laser-induced breakdown spectroscopy, and adsorption studies. It has been used to catalyze the decolorization of Ponceau S (PS), a model diazo dye, in an aqueous suspension under visible light ( I ≈ 1.8 × 10-4 W cm-2). This ZnO was found to be more efficient as a photocatalyst compared to pristine ZnO. ZnO samples with higher temperatures (500°C and 700°C) show less catalytic activity. SEM images show that the particle size of ZnO increases with the increase in calcined temperature of ZnO through agglomeration, resulting in a decrease in surface area. Photodecolorization of PS is affected by its and ZnO concentrations, but unaffected by the initial pH of the solutions in the range of 4 to 7. Illumination for a sufficiently long time completely mineralizes the dye, but no Zn2+ can be detected in the clear solution. Photodegradation kinetics in the ZnO suspension obeys the Langmuir-Hinshelwood equation, and some activation of the ZnO surface by light is indicated.

Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

NASA Astrophysics Data System (ADS)

Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

2018-02-01

(11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

Structural, thermal and optical properties of TeO2-ZnO-CdO-BaO glasses doped with VO(2+).

PubMed

Sreenivasulu, V; Upender, G; Chandra Mouli, V; Prasad, M

2015-09-05

The glasses with composition 64TeO2-15ZnO-(20-x)CdO-xBaO-1V2O5 (0⩽x⩽20 mol%) were prepared by conventional melt quenching technique. X-ray diffraction analysis was used to confirm the amorphous nature of the glasses. The optical absorption studies revealed that the cut-off wavelength (λα) decreases while optical band gap energy (Eopt) and Urbach energy (ΔE) values increase with an increase of BaO content. Refractive index (n) evaluated from Eopt was found to decrease with an increase of BaO content. The physical parameters such as density (ρ), molar volume (Vm), oxygen packing density (OPD), optical basicity (Λ), molar refraction (Rm), and metallization criterion (M) evaluated and discussed. FTIR and Raman spectroscopic studies showed that the glass network consists of TeO4, TeO3+1/TeO3 and ZnO4 units as basic structural units. The glass transition temperature (Tg) of glass sample, onset crystallization temperature (To) and thermal stability ΔT were determined from Differential Scanning Calorimetry (DSC). Using electron paramagnetic resonance (EPR) spectra of vanadium glasses the spin Hamiltonian parameters and dipolar hyperfine coupling parameters of VO(2+) ions were calculated. It was found that V(4+) ions in these glasses exist as VO(2+) in octahedral coordination with a tetragonal distortion and have C4V symmetry with ground state dxy. Tetragonality (Δg∥/Δg⊥) of vanadium ion sites exhibited non-linear variation with BaO content. Copyright © 2015 Elsevier B.V. All rights reserved.

Structural, dielectric and magnetic studies of (x) Mg0.2Cu0.3Zn0.5Fe2O4 + (1-x) Ba0.8Zr0.2TiO3 magnetoelectric composites

NASA Astrophysics Data System (ADS)

Khader, S. Abdul; Giridharan, N. V.; Chaudhuri, Arka; Sankarappa, T.

2016-05-01

The Magneto-electric composites (x) Mg0.2Cu0.3Zn0.5Fe2O4 + (1-x) Ba0.8Zr0.2TiO3 (x=15%,30%,45%) were synthesized by sintering mixtures of highly ferroelectric Ba0.8Zr0.2TiO3 (BZT) and highly magneto-strictive component Mg0.2Cu0.3Zn0.5Fe2O4 (MCZF). The presences of two phases in magneto-electric composites were probed by X-ray diffraction (XRD) studies. The peaks observed in the XRD spectrum indicated spinel cubic structure for MCZF ferrite and tetragonal perovskite structure for BZT and, both spinel and pervoskite structures for synthesized composites. Surface morphology of the samples has been investigated using Field Emission Scanning Electron Microscope (FESEM). Frequency dependent dielectric properties of synthesized composites were measured from 100 Hz to 1 MHz at RT using HIOKI LCR HI-TESTER. The dielectric dispersion is observed at lower frequencies for the synthesized ME composites. The magnetic properties of synthesized composites were analyzed using a Vibrating Sample Magnetometer (VSM). It is observed that the values of saturation magnetization increases along with the ferrite content.

Optical and structural properties of individual Co-doped ZnO microwires

NASA Astrophysics Data System (ADS)

Kolomys, O. F.; Strelchuk, V. V.; Rarata, S. V.; Hayn, R.; Savoyant, A.; Giovannelli, F.; Delorme, F.; Tkach, V.

2018-06-01

The Co-doped ZnO microwires (MWs) were grown using the optical furnace method. We used Scanning electron microscopy (SEM), polarized micro-Raman spectroscopy, photoluminescence (PL) and optical absorption spectroscopy to systematic investigation of the optical and structural properties of Co-doped ZnO MWs. The SEM analysis reveals that Co-doped ZnO MWs has hexagonal facets and cavity inside. The EDS results confirmed the presence and non-uniform distribution of Co impurities in the samples. Co doping of ZnO MWs leads to the decreased intensity, drastically broadening and high-energy shift of the NBE PL band. The red emission band at 1.85 eV originates from 2E(2G) → 4A2 (4F) intra-3d-transition of Co2+ in the ZnO lattice has been observed. The intense structured absorption bands within the near infrared ranges 3800-4800 and 5500-9000 cm-1 are caused by electronic spin-allowed transitions 4T2(F) ← 4A2(F) and 4T1(F) ← 4A2(F) of the tetrahedrally coordinated Co2+ (3 d7) ions substituting Zn2+ ions in Co-doped ZnO MWs. Micro-Raman studies of Co doped ZnO MWs show doping/disorder induced additional modes as compared to the undoped sample. The resonant enhancement of the additional local Co-related A1-symmetry Raman mode is observed in the parallel polarization geometry y(z , z) ybar . For the Co doped ZnO MWs, the enhancement of the additional Co-related local vibration mode with an increase in the excitation photon energy is also observed in the Raman spectra.

Description and crystal structure of nyholmite, a new mineral related to hureaulite, from Broken Hill, New South Wales, Australia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elliott, P.; Turner, P.; Jensen, P.

2010-08-12

Nyholmite, Cd{sub 3}Zn{sub 2}(AsO{sub 3}OH){sub 2}(AsO{sub 4}){sub 2} {center_dot} 4H{sub 2}O, from the Block 14 Opencut, Broken Hill, New South Wales, Australia, is a new Cd-Zn arsenate species, isostructural with the minerals of the hureaulite group. The mineral occurs in a quartz-garnet-arsenopyrite matrix as white globules, tufted aggregates of fibrous crystals and radiating hemispheres of thin, colourless, bladed crystals. Associated minerals are goldquarryite, lavendulan-sampleite, scorodite-strengite and gypsum. Individual crystals are up to 0.2 mm in length and 0.05 mm across. The mineral is transparent to translucent with a vitreous lustre. It is brittle with an uneven fracture and a whitemore » streak. The Mohs hardness is 3-3.5 and the calculated density is 4.23 g cm{sup -3} for the empirical formula. Electron microprobe analyses yielded CdO 34.58, ZnO 9.72, MnO 3.59, CuO 3.39, Al{sub 2}O{sub 3} 0.20, CaO 0.16, PbO 0.37, As{sub 2}O{sub 5} 34.55, P{sub 2}O{sub 5} 6.29 totalling 92.85 wt.%. The empirical formula, based on 20 oxygen atoms, is Ca{sub 0.03}Pb{sub 0.02} Cd{sub 2.80}Al{sub 0.04}Zn{sub 1.24}-Cu{sub 0.44}Mn{sub 0.53}[(AsO{sub 4}){sub 3.13}(PO{sub 4}){sub 0.92}]{Sigma}{sub 4.05}H{sub 1.91} {center_dot} 3.79H{sub 2}O. Nyholmite is monoclinic, C2/c, a = 18.062(4) {angstrom}, b = 9.341(2) {angstrom}, c = 9.844(2) {angstrom}, {beta} = 96.17(3){sup o}, V = 1651.2(6) {angstrom}{sup 3} (single-crystal data, at 123 K). The six strongest lines in the X-ray powder diffraction pattern are [d({angstrom}),I,(hkl)]: 8.985,30,(200); 8.283, 85,(110); 6.169,25,(111); 4.878,25,(002); 3.234,100,(222, 420); 3.079,65,(222, 511); 2.976,45,(113). The crystal structure was solved by Patterson methods and refined using 2045 observed reflections to R1(F) = 3.73%. The structure is characterized by a kinked, five-membered chain of edge-sharing M{phi}{sub 6} ({phi} = unspecified anion) octahedra, or pentamer, that extends in the a direction. The pentamers link by sharing corners to form a sheet in the (001) plane. Pentamers are also linked, via corner-sharing, by (As,P)O{sub 4} groups forming thick slabs in the (001) plane. The slabs link in the c direction by cornersharing between octahedra and tetrahedra to form a dense heteropolyhedral framework. Moderate to weak hydrogen-bonding provides additional linkage between the slabs.« less

The electrical properties of n-ZnO/p-SnO heterojunction diodes

NASA Astrophysics Data System (ADS)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

K2 ZnSn3 Se8 : A Non-Centrosymmetric Zinc Selenidostannate(IV) Featuring Interesting Covalently Bonded [ZnSn3 Se8 ]2- Layer and Exhibiting Intriguing Second Harmonic Generation Activity.

PubMed

Zhou, Molin; Jiang, Xingxing; Yang, Yi; Guo, Yangwu; Lin, Zheshuai; Yao, JJiyong; Wu, Yicheng

2017-06-19

Non-centrosymmetric zinc selenidostannate(IV) K 2 ZnSn 3 Se 8 was synthesized. It features interesting covalently bonded [ZnSn 3 Se 8 ] 2- layers with K + cations filling in the interlayer voids. The phonon spectrum was calculated to clarify its structural stability. Based on the X-ray diffraction data along with the Raman spectrum, the major bonding features of the title compound were identified. According to the UV/vis-NIR spectroscopy, K 2 ZnSn 3 Se 8 possesses a typical direct band gap of 2.10 eV, which is in good agreement with the band structure calculations. Moreover, our experimental measurements and detailed theoretical calculations reveal that K 2 ZnSn 3 Se 8 is a new phase-matchable nonlinear optical material with a powder second harmonic generation (SHG) signal about 0.6 times of that of AgGaS 2 . © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Syntheses, structures and luminescence for zinc coordination polymers based on a multifunctional 4‧-(3-carboxyphenyl)- 3,2‧:6‧,3″-terpyridine ligand

NASA Astrophysics Data System (ADS)

Cheng, Yue; Yang, Meng-Lin; Hu, Huai-Ming; Xu, Bing; Wang, Xiaofang; Xue, Ganglin

2016-07-01

Six new coordination polymers, [ZnLCl]n(1), [ZnL2]n·2nH2O (2), [Zn2L(o-bdc)(OH)]n·0.5nH2O (3), [Zn2L(m-bdc)(OH)]n·nH2O (4), [Zn2L2(p-bdc) (H2O)2]n·nH2O (5), [Zn2L(1,2,4-btc)(H2O)]n(6), (HL=4‧-(3-carboxyphenyl)- 3,2‧:6‧,3″-terpyridine, H2(o-bdc)= benzene-1,2-dicarboxylic acid, H2(m-bdc)= benzene-1,3-dicarboxylic acid, H2(p-bdc)= benzene-1,4-dicarboxylic acid, H3(1,2,4-btc)= benzene-1,2,4-tricarboxylic acid) have been synthesized under the hydrothermal conditions. Compound 1 displays a 3-connected 2D network structure with point symbol of {82.10}. Compound 2 exhibits 1D infinite loop chain structure. Compound 3 possesses a (3,8)-connected 3D framework composed of tetranuclear units with point symbol of {43}2{46.618.84}. Compound 4 features a typical 2D hcb network based on tetranuclear zinc(II) units with point symbol of {44.62}. Compound 5 presents a classical two-fold penetration sql network with point symbol of {63}. Compound 6 can be seen as a (3,3,6)-connected 3D net with point symbol of {42.64.89}{42.6}{63}. The thermal stability and luminescent properties of compounds 1-6 in the solid state are discussed in detail.

Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Willander, M.; Wahab, Q.

2012-04-01

Interface states density (NSS) distribution is extracted in Au/ ZnO Schottky diodes. Nanorods of ZnO are grown on silver (Ag) using aqueous chemical growth (ACG) technique. Well aligned hexagonal-shaped vertical nanorods of a mean diameter of 300 - 450 nm and 1.3 -1.9 μm high are revealed in SEM. Gold (Au) Schottky contacts of thickness 60 nm and 1.5mm diameter were evaporated. For electrical characterization of Schottky diodes current-voltage (I-V) and capacitance-Voltage (C-V) measurements are performed. The diodes exhibited a typical non-linear rectifying behavior with a barrier height of 0.62eV and ideality factor of 4.3. Possible reasons for low barrier height and high ideality factor have been addressed. Series resistance (RS) has been calculated from forward I-V characteristics using Chueng's function. The density of interfacial states (NSS) below the conduction band (EC-ESS) is extracted using I-V and C-V measured values. A decrease in interface states density (NSS) is observed from 3.74 × 1011 - 7.98 × 1010 eV-1 cm-2 from 0.30eV - 0.61eV below the conduction band edge.

Fabrication and characterization of high mobility spin-coated zinc oxide thin film transistors

NASA Astrophysics Data System (ADS)

Singh, Shaivalini; Chakrabarti, P.

2012-10-01

A ZnO based thin film transistor (TFT) with bottom-gate configuration and SiO2 as insulating layer has been fabricated and characterized. The ZnO thin film was prepared by spin coating the sol-gel solution on the p-type Si wafers. The optical and structural properties of ZnO films were investigated using UV measurements and scanning electron microscope (SEM). The result of UV-visible study confirms that the films have a good absorbance in UV region and relatively low absorbance in the visible region. The TFT exhibited an off-current of 2.5×10-7 A. The values of field effect channel mobility and on/off current ratio extracted for the device, measured 11 cm2/V.s and ~102 respectively. The value of threshold voltage was found to be 1.3 V.

Morphology and structure features of ZnAl{sub 2}O{sub 4} spinel nanoparticles prepared by matrix-isolation-assisted calcination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Xuelian, E-mail: xueliandu@126.com; Li, Liqiang; Zhang, Wenxing

2015-01-15

Graphical abstract: The substrate ZnO as the isolation medium is effective in preventing the sintering and agglomeration of ZnAl{sub 2}O{sub 4} nanoparticles, and it also prevents their contamination. High purity, well-dispersed, and single-crystal ZnAl{sub 2}O{sub 4} nanoparticles with 3.72 eV band gap were obtained. - Abstract: Well-dispersed ZnAl{sub 2}O{sub 4} spinel nanoparticles with an average crystalline size of 25.7 nm were synthesized successfully and easily by polymer-network and matrix-isolation-assisted calcination. The product microstructure and features were investigated by X-ray diffractometry, thermogravimetric and differential thermal analysis, Fourier transform-infrared spectroscopy, N{sub 2} adsorption–desorption isotherms, and energy dispersive X-ray spectra. The morphology andmore » optical performance of the as-prepared ZnAl{sub 2}O{sub 4} nanoparticles were characterized by scanning electron microscope, transmission electron microscopy, and photoluminescence spectrometer. Experimental results indicate that excess ZnO acted as the isolation medium is effective in preventing the sintering and agglomeration of ZnAl{sub 2}O{sub 4} nanoparticles, and it also prevents their contamination. Then, high purity and well-dispersed ZnAl{sub 2}O{sub 4} nanoparticles with single-crystal structure were obtained.« less

Au nanoparticles-ZnO composite nanotubes using natural silk fibroin fiber as template for electrochemical non-enzymatic sensing of hydrogen peroxide.

PubMed

Chen, Liangliang; Xu, Xiaolong; Cui, Feng; Qiu, Qianying; Chen, Xiaojun; Xu, Jinzhong

2018-05-23

A novel electrochemical sensor based on the composite of gold nanoparticles/zinc oxide nanotube (AuNPs/ZnO-NTs) was constructed and its application as hydrogen peroxide (H 2 O 2 ) non-enzymatic sensor was investigated. ZnO-NTs were prepared by a biomineralization strategy in which silk fibroin fiber (SFF) was used as template, and thus the ZnO-NTs inherited the advantages of SFF such as mechanical stability, flexible biomimetic morphology and biocompatibility. The AuNPs/ZnO-NTs was further prepared by the electrostatic absorption of AuNPs onto the surface of ZnO-NTs, and found to be capable to catalyze the reduction of H 2 O 2 . The working potential was 0.05 V, which was far higher than those in literatures, indicating the strong anti-interference ability in the real application. The catalytic current was linearly proportional in the concentration range of 1 μM-3.0 mM with a sensitivity of 1336.7 μA mM -1  cm -2 . The detection limit was estimated to be 0.1 μM (S/N = 3). Such a high sensitivity was attributed to the electrocatalytic property of ZnO and high electron transfer ability of AuNPs/ZnO-NTs structure. Moreover, the final detection results of H 2 O 2 in real samples showed the acceptable accuracy compared with the traditional potassium permanganate titration, exhibiting the prospect to be used as an applicable sensor in actual detections. Copyright © 2018 Elsevier Inc. All rights reserved.

Reinventing a p-type doping process for stable ZnO light emitting devices

NASA Astrophysics Data System (ADS)

Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2018-06-01

A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

PubMed Central

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-01-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

NASA Astrophysics Data System (ADS)

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-12-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400-900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

DOE PAGES

Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; ...

2015-06-23

Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers aftermore » mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d 5/2O 2 and 76.7% for Te 3d 3/2O 2) compared with the HBr-based solution (27.6% for Te 3d 5/2O 2 and 35.8% for Te 3d 3/2O 2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM for the HBr-based solution, the latter showed a smaller variation in performance of 0.39% FWHM over 7 days compared with 0.69% for the BME-based solution.« less

The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

NASA Astrophysics Data System (ADS)

Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

2014-04-01

The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10-3 Ω cm for undoped ZnO to 2.05 × 10-3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

Pt skin on Pd–Co–Zn/C ternary nanoparticles with enhanced Pt efficiency toward ORR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Weiping; Zhu, Jing; Han, Lili

Exploring highly active, stable and relatively low-cost nanomaterials for the oxygen reduction reaction (ORR) is of vital importance for the commercialization of proton exchange membrane fuel cells (PEMFCs). A highly active, durable, carbon supported, and monolayer Pt coated Pd–Co–Zn nanoparticle is synthesized via a simple impregnation–reduction method, followed by spontaneous displacement of Pt. By tuning the atomic ratios, we obtain the composition–activity volcano curve for the Pd–Co–Zn nanoparticles and determined that Pd : Co : Zn = 8 : 1 : 1 is the optimal composition. Compared with pure Pd/C, the Pd 8CoZn/C nanoparticles show a substantial enhancement in bothmore » the catalytic activity and the durability toward the ORR. Moreover, the durability and activity are further enhanced by forming a Pt skin on Pd 8CoZn/C nanocatalysts. Interestingly, after 10 000 potential cycles in N 2-saturated 0.1 M HClO 4 solution, Pd 8CoZn@Pt/C shows improved mass activity (2.62 A mg -1Pt) and specific activity (4.76 A m -2total), which are about 1.4 and 4.4 times higher than the initial values, and 37.4 and 5.5 times higher than those of Pt/C catalysts, respectively. After accelerated stability testing in O 2-saturated 0.1 M HClO 4 solution for 30 000 potential cycles, the half-wave potential negatively shifts about 6 mV. Our results show that the Pt skin plays an important role in enhancing the activity as well as preventing degradation.« less

Pt skin on Pd–Co–Zn/C ternary nanoparticles with enhanced Pt efficiency toward ORR

DOE PAGES

Xiao, Weiping; Zhu, Jing; Han, Lili; ...

2016-07-15

Exploring highly active, stable and relatively low-cost nanomaterials for the oxygen reduction reaction (ORR) is of vital importance for the commercialization of proton exchange membrane fuel cells (PEMFCs). A highly active, durable, carbon supported, and monolayer Pt coated Pd–Co–Zn nanoparticle is synthesized via a simple impregnation–reduction method, followed by spontaneous displacement of Pt. By tuning the atomic ratios, we obtain the composition–activity volcano curve for the Pd–Co–Zn nanoparticles and determined that Pd : Co : Zn = 8 : 1 : 1 is the optimal composition. Compared with pure Pd/C, the Pd 8CoZn/C nanoparticles show a substantial enhancement in bothmore » the catalytic activity and the durability toward the ORR. Moreover, the durability and activity are further enhanced by forming a Pt skin on Pd 8CoZn/C nanocatalysts. Interestingly, after 10 000 potential cycles in N 2-saturated 0.1 M HClO 4 solution, Pd 8CoZn@Pt/C shows improved mass activity (2.62 A mg -1Pt) and specific activity (4.76 A m -2total), which are about 1.4 and 4.4 times higher than the initial values, and 37.4 and 5.5 times higher than those of Pt/C catalysts, respectively. After accelerated stability testing in O 2-saturated 0.1 M HClO 4 solution for 30 000 potential cycles, the half-wave potential negatively shifts about 6 mV. Our results show that the Pt skin plays an important role in enhancing the activity as well as preventing degradation.« less

Synthesis, crystal structures and luminescent properties of zinc(II) metal–organic frameworks constructed from terpyridyl derivative ligand

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xiao-Le; Shangguan, Yi-Qing; Hu, Huai-Ming, E-mail: ChemHu1@NWU.EDU.CN

2014-08-15

Five zinc(II) metal–organic frameworks, [Zn{sub 3}(344-pytpy){sub 2}Cl{sub 6}]{sub n}·n(H{sub 2}O) (1), [Zn(344-pytpy)(ox)]{sub n} (2), [Zn{sub 2}(344-pytpy)(bdc){sub 2}]{sub n}·1.5n(H{sub 2}O) (3), [Zn{sub 2}(344-pytpy){sub 2} (sfdb){sub 2}]{sub n}·1.5n(H{sub 2}O) (4) and [Zn{sub 3}(344-pytpy){sub 2}(btc){sub 2}]{sub n}·2n(H{sub 2}O) (5), (344-pytpy=4′-(3-pyridyl)-4,2′:6′,4″-terpyridine, H{sub 2}ox=oxalic acid, H{sub 2}bdc=1,4-benzenedi-carboxylic acid, H{sub 2}sfdb=4,4′-sulfonyldibenzoic acid and H{sub 3}btc=1,3,5-benzene-tricarboxylic acid) have been prepared by hydrothermal reactions. Compound 1 is a 1D chain structure, in which 344-pytpy ligand links three Zn{sup II} centers through three of terminal N-donors. Compound 2 is a 4-connected 3D framework with the dia topological net and the Schläfli symbol of 6{sup 6}. Compound 3 displays amore » unusual 3-fold interpenetrating 3D coordination network which exhibits a new intriguing (3,3,4)-connected topological net with the Schläfli symbol of (4.8{sup 2})(4.8{sup 5})(8{sup 3}). Compound 4 features a two-fold interpenetrating 4-connected 2D framework with the sql topological net and the Schläfli symbol of (4{sup 4}.6{sup 2}). Compound 5 is a new self-interpenetrating (3,3,4,4)-connected topological net with the Schläfli symbol of (6.8{sup 2}){sub 2}(6{sup 2}.8{sup 2}.10.12)(6{sup 2}.8{sup 3}.10){sub 2}(6{sup 2}.8){sub 2}. The luminescence properties of 1–5 have been investigated by emission spectra and they possess great thermal stabilities which can be stable up to around 400 °C. - Graphical abstract: Five new Zn(II) metal–organic frameworks based on dicarboxylate and terpyridyl derivative ligands have been synthesized by hydrothermal reactions, giving networks from 1D to 3D structures. The thermal stability and luminescent property have been investigated. - Highlights: • Five zinc(II) metal–organic frameworks have been prepared under hydrothermal conditions. • Their crystal and topological structures have been investigated. • The luminescent properties have been investigated. • They possess great thermal stabilities which can be stable up to around 400 °C.« less

ZnO@Gd2O3 core/shell nanoparticles for biomedical applications: Physicochemical, in vitro and in vivo characterization.

PubMed

Woźniak, Anna; Grześkowiak, Bartosz F; Babayevska, Nataliya; Zalewski, Tomasz; Drobna, Monika; Woźniak-Budych, Marta; Wiweger, Małgorzata; Słomski, Ryszard; Jurga, Stefan

2017-11-01

The chemical composition of nanoparticles (NPs) may be so designed as to provide measurability for numerous imaging techniques in order to achieve synergistic advantages. Innovative and unique structure of the core/shell ZnO@Gd 2 O 3 NPs possesses luminescent and magnetic properties, and is expected that they will become a new generation of contrast agents for Magnetic Resonance Imaging (MRI) and nanocarriers for theranostics. Thus, by surface biofunctionalization, it is possible to indicate particular nanoparticle compositions which provide efficient imaging, targeted drug delivery, and biocompatibility. Novel ZnO@Gd 2 O 3 NPs were synthesized and biofunctionalized by folic acid (FA) and doxorubicin (Doxo) to provide target and anticancer functions. Physicochemical analyses of the nanoparticles were performed. The biological study included a cytotoxicity in vitro, cellular distribution evaluation, as well as toxicity analyses, performed for the first time, on the in vivo zebrafish (Danio rerio) model. Nanoparticles were found to be effective double-function biomarkers (MRI T 2 contrast agents, fluorescent imaging). The biological study showed that ZnO@Gd 2 O 3 and ZnO@Gd 2 O 3 @OA-polySi@FA NPs are biocompatible in a particular concentration ranges. Conjugation with folic acid and/or doxorubicin resulted in effective drug delivery targeting. The in vivo results described the toxicology profile toward the zebrafish embryo/larvae, including new data concerning the survival, hatching ratio, and developmental malformations. Copyright © 2017 Elsevier B.V. All rights reserved.

Emission and Structure-Varying ZnO and Carbon Nanocrystal Composite in Mechanical Processing

NASA Astrophysics Data System (ADS)

Torchynska, T.; Perez Millan, B.; Polupan, G.; Kakazey, M.

2018-03-01

Morphology, photoluminescence (PL), and Raman scattering spectra have been investigated for mixtures of ZnO+0.1%C nanocrystals (NCs) at different stages of mechanical processing (MP). The transformation of graphite into graphene monolayers covering the ZnO NC surface is revealed for the first MP stage. The interaction with oxygen has been detected in the second MP stage which leads to the dissolution of oxygen interstitials in the ZnO NCs and to the formation of graphene (graphite) oxides. Increasing the concentration of the oxygen interstitials in ZnO NCs also enhances the intensity stimulation of the orange PL band (2.18eV). Simultaneously, the PL band peaking at 2.82-2.90 eV is detected in the PL spectra of the ZnO+0.1%C NC mixture after MP for 9-90 min. Then, the variation of the ZnO NC shape, agglomeration of ZnO NCs, modification of ZnO defects and decreasing PL intensity have been detected after prolonged MP for 390 min. It is expected that short stages of MP can be useful for ZnO NC surface covering by graphene layers or graphene (graphite) oxides.

A Co₃O₄-embedded porous ZnO rhombic dodecahedron prepared using zeolitic imidazolate frameworks as precursors for CO₂ photoreduction.

PubMed

Wang, Tao; Shi, Li; Tang, Jing; Malgras, Victor; Asahina, Shunsuke; Liu, Guigao; Zhang, Huabin; Meng, Xianguang; Chang, Kun; He, Jianping; Terasaki, Osamu; Yamauchi, Yusuke; Ye, Jinhua

2016-03-28

Metal-organic frameworks (MOFs) are attracting considerable attention for their use as both the precursor and the template to prepare metal oxides or carbon-based materials. For the first time in this paper, the core-shell ZIF-8@ZIF-67 crystals are thermally converted into porous ZnO@Co3O4 composites by combining a seed-mediated growth process with a two-step calcination. The designed porous ZnO@Co3O4 composites exhibited the highest photocatalytic activity with an excellent stability for the reduction of CO2 among the commonly reported composite photocatalysts. Their superior photocatalytic performance is demonstrated to be resulting from the unique porous structure of ZnO@Co3O4 and the co-catalytic function of Co3O4 which can effectively suppress the photocorrosion of ZnO.

Structural and optical properties of ZnO thin films prepared by RF sputtering at different thicknesses

NASA Astrophysics Data System (ADS)

Hammad, Ahmed H.; Abdel-wahab, M. Sh.; Vattamkandathil, Sajith; Ansari, Akhalakur Rahman

2018-07-01

Hexagonal nanocrystallites of ZnO in the form of thin films were prepared by radio frequency sputtering technique. X-ray diffraction analysis reveals two prominent diffraction planes (002) and (103) at diffraction angles around 34.3 and 62.8°, respectively. The crystallite size increases through (103) plane from 56.1 to 64.8 Å as film thickness changed from 31 nm up to 280 nm while crystallites growth through (002) increased from 124 to 136 Å as film thickness varies from 31 to 107 nm and dropped to 115.8 Å at thickness 280 nm. The particle shape changes from spherical to longitudinal form. The particle size is 25 nm for films of thickness below 107 nm and increases at higher thicknesses (134 and 280 nm) from 30 to 40 nm, respectively. Optical band gap is deduced to be direct with values varied from 3.22 to 3.28 eV and the refractive index are evaluated based on the optical band values according to Moss, Ravindra-Srivastava, and Dimitrov-Sakka models. All refractive index models gave values around 2.3.

Modification of back electrode with WO3 layer and its effect on Cu2ZnSn(S,Se)4-based solar cells

NASA Astrophysics Data System (ADS)

Shi, Kun; Yao, Bin; Li, Yongfeng; Ding, Zhanhui; Deng, Rui; Sui, Yingrui; Zhang, Zhenzhong; Zhao, Haifeng; Zhang, Ligong

2018-01-01

In the present work, we designed and prepared Cu2ZnSn(S,Se)4 (CZTSSe)-based solar cells with a new structure of Al/ITO/ZnO/CdS/CZTSSe/WO3/Mo/SLG (S1-5) by depositing about 5-nm-thick WO3 layer with monoclinic structure on the back electrode Mo/SLG of solar cells with the convention structure of Al/ITO/ZnO/CdS/CZTSSe/Mo/SLG (S2), with the aim of improving the power conversion efficiency (PCE) of CZTSSe-based solar cells. It is found that the average open circuit voltage (Voc) increases from 346.7 mV of the S2 cells to 400.9 mV of the S1-5 cells, the average short circuit current density (Jsc) from 26.4 mA/cm2 to 32.1 mA/cm2 and the filling factor (FF) from 33.8 to 40.0 by addition of the WO3 layer, which results in that the average PCE increases from 3.10% of the S2 cells to 5.14% of the S1-5 cells. The average increasing percent of the PCE is 65.8%. The increase in Voc, Jsc and FF of the S1-5 cells compared to the S2 cells is attributed to that the WO3 layer prevent the Se coming from Se ambient and CZTSSe to react with the Mo to form MoSe2 and other second phases, which makes the shunt resistance (Rsh) of the S1-5 increase and the series resistance (Rs) and reverse saturation current density (J0) decrease compared to the S2 cells. The decreased J0 is main factor of improvement of the PCE. A mechanism of influence of the Rsh, Rs and J0 on the PCE is also revealed. Our result demonstrates that addition of the WO3 layer with a reasonable thickness can be a promising technical route of improving the PCE of the CZTSSe-based solar cell.

An All Oxide-Based Imperceptible Thin-Film Transistor with Humidity Sensing Properties

PubMed Central

Kim, Kyung Su; Ahn, Cheol Hyoun; Kang, Won Jun; Cho, Sung Woon; Jung, Sung Hyeon; Yoon, Dae Ho; Cho, Hyung Koun

2017-01-01

We have examined the effects of oxygen content and thickness in sputtered InSnO (ITO) electrodes, especially for the application of imperceptible amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) in humidity sensors. The imperceptible a-IGZO TFT with 50-nm ITO electrodes deposited at Ar:O2 = 29:0.3 exhibited good electrical performances with Vth of −0.23 V, SS of 0.34 V/dec, µFE of 7.86 cm2/V∙s, on/off ratio of 8.8 × 107, and has no degradation for bending stress up to a 3.5-mm curvature. The imperceptible oxide TFT sensors showed the highest sensitivity for the low and wide gate bias of −1~2 V under a wide range of relative humidity (40–90%) at drain voltage 1 V, resulting in low power consumption by the sensors. Exposure to water vapor led to a negative shift in the threshold voltage (or current enhancement), and an increase in relative humidity induced continuous threshold voltage shift. In particular, compared to conventional resistor-type sensors, the imperceptible oxide TFT sensors exhibited extremely high sensitivity from a current amplification of >103. PMID:28772888

A vanadium-doped ZnO nanosheets-polymer composite for flexible piezoelectric nanogenerators.

PubMed

Shin, Sung-Ho; Kwon, Yang Hyeog; Lee, Min Hyung; Jung, Joo-Yun; Seol, Jae Hun; Nah, Junghyo

2016-01-21

We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ∼32 V and ∼6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices.

Impact of Triethanolamine as an Additive for Rechargeable Alkaline Zn/MnO 2 Batteries under Limited Depth of Discharge Conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kelly, Maria; Duay, Jonathon; Lambert, Timothy N.

Rechargeable alkaline Zn/MnO 2 batteries are being developed for use as cost-effective grid-scale energy storage devices. Previous studies have shown that limiting the depth of discharge (DOD) of the MnO 2 cathode extends cell lifetime while still providing a cost-effective battery system. Herein, a comprehensive study of triethanolamine (TEA) as an additive in Zn/MnO 2 limited DOD batteries is provided by examining the effect of TEA in full cells as well as independently on the cathode, anode, separator, and electrolyte. Improvement in cycle-ability of the cathode (on average, 80% of cycled capacity remains after 191 cycles without TEA, 568 cyclesmore » with TEA) and a decrease in ionic zinc mobility across Celgard 3501 (7.91 × 10 -5 cm 2/min without TEA, 3.56 × 10 -5 cm 2/min with TEA) and Cellophane 350P00 (3.26 × 10 -5 cm 2/min without TEA, 4.74 × 10 -6 cm 2/min with TEA) separators upon the addition of TEA are demonstrated. However, TEA increased both the reduction potential of Zn (-0.68 V vs. Hg/HgO without TEA, -0.76 V with TEA) and the solubility of Zn 2+ (0.813 M without TEA, 1.023 M with TEA). Overall, the addition of TEA extended the lifetime of limited DOD cells on average by 297%.« less

Impact of Triethanolamine as an Additive for Rechargeable Alkaline Zn/MnO 2 Batteries under Limited Depth of Discharge Conditions

DOE PAGES

Kelly, Maria; Duay, Jonathon; Lambert, Timothy N.; ...

2017-12-01

Rechargeable alkaline Zn/MnO 2 batteries are being developed for use as cost-effective grid-scale energy storage devices. Previous studies have shown that limiting the depth of discharge (DOD) of the MnO 2 cathode extends cell lifetime while still providing a cost-effective battery system. Herein, a comprehensive study of triethanolamine (TEA) as an additive in Zn/MnO 2 limited DOD batteries is provided by examining the effect of TEA in full cells as well as independently on the cathode, anode, separator, and electrolyte. Improvement in cycle-ability of the cathode (on average, 80% of cycled capacity remains after 191 cycles without TEA, 568 cyclesmore » with TEA) and a decrease in ionic zinc mobility across Celgard 3501 (7.91 × 10 -5 cm 2/min without TEA, 3.56 × 10 -5 cm 2/min with TEA) and Cellophane 350P00 (3.26 × 10 -5 cm 2/min without TEA, 4.74 × 10 -6 cm 2/min with TEA) separators upon the addition of TEA are demonstrated. However, TEA increased both the reduction potential of Zn (-0.68 V vs. Hg/HgO without TEA, -0.76 V with TEA) and the solubility of Zn 2+ (0.813 M without TEA, 1.023 M with TEA). Overall, the addition of TEA extended the lifetime of limited DOD cells on average by 297%.« less

FAST TRACK COMMUNICATION High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Xia, D. X.; Xu, J. B.

2010-11-01

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm2 V-1 s-1 and 2.1 cm2 V-1 s-1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oruc, Feyza B.; Aygun, Levent E.; Donmez, Inci

ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250 °C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80 °C; I{sub on}/I{sub off} ratio is extracted as 7.8 × 10{sup 9} and subthreshold slope is extracted as 0.116 V/dec.more » Flexible ZnO TFT devices are also fabricated using films grown at 80 °C. I{sub D}–V{sub GS} characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias.« less

Effect of Dielectric Material Films on Crystallization Characteristics of Ge2Sb2Te5 Phase-Change Memory Film

NASA Astrophysics Data System (ADS)

Nishiuchi, Kenichi; Yamada, Noboru; Kawahara, Katsumi; Kojima, Rie

2007-11-01

Reduction of the film thickness of phase-change film and the adoption of GeN- or ZrO2-based dielectric films are both effective in achieving good thermal stability in phase-change optical disks. It was experimentally confirmed that, at a heating rate of 10 °C/min, the crystallization temperature Tx of the Ge2Sb2Te5 amorphous film when sandwiched by ZnS-SiO2 films markedly increases from 162 to 197 °C, while the thickness of the Ge2Sb2Te5 film decreases from 10 to 3 nm. Tx also slightly increases when ZnS-SiO2 films are substituted for GeN-based films (from 162 to 165 °C) and ZrO2-based films (from 162 to 167 °C). At the same time, the activation energy of crystallization is 2.4 eV for both GeN- and ZrO2-based films, and is higher than 2.2 eV for ZnS-SiO2 films.

Electrochemical reduction of CO2 to CO over Zn in propylene carbonate/tetrabutylammonium perchlorate

NASA Astrophysics Data System (ADS)

Shen, Feng-xia; Shi, Jin; Chen, Tian-you; Shi, Feng; Li, Qing-yuan; Zhen, Jian-zheng; Li, Yun-fei; Dai, Yong-nian; Yang, Bin; Qu, Tao

2018-02-01

Developing low cost and high efficient electrode for carbon dioxide (CO2) reduction in organic media is essential for practical application. Zn is a cheap metal and has high catalytic effects on CO2 reduction to carbon monoxide (CO) in aqueous solution. However, little attention has been given to investigate the performance of Zn in organic media for CO2 reduction. In present work, we have conducted CO2 reduction in propylene carbonate/tetrabutylammonium perchlorate on Zn due to that propylene carbonate is a widely used industrial absorber, and tetrabutylammonium perchlorate is a commonly used organic supporting electrolyte. In addition, because electrochemical reduction of CO2 to CO naturally produces H2O, we have discussed water effects on CO2 reduction in propylene carbonate/tetrabutylammonium perchlorate+6.8 wt % H2O. Our experiment results reveal that the faradaic efficiency for CO formation reaches to 83%, and the current density remains stable at 6.72 mA/cm2 at voltage -2.3 V for 4 h. Interestingly, Zn presents higher catalytic activity than Ag, and slightly lower than Au. X-ray photoelectron spectroscopy results confirm that no poisonous species is formed and absorbed on the cathode, which is an important advantage in practical application.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhi-Hao; Zhao, Yue; Chen, Shui-Sheng

Seven new coordination polymers [Zn(H{sub 2}L)(mbdc)] (1), [Zn(H{sub 3}L)(btc)] (2), [Zn(H{sub 2}L)(Hbtc)] (3), [Zn(H{sub 2}L)(Hbtc)]·H{sub 2}O (4), [Zn{sub 2}(H{sub 2}L)(btc)(μ{sub 2}-OH)] (5), [Cd(H{sub 2}L)(mbdc)] (6) and [Cd{sub 3}(H{sub 2}L){sub 2}(btc){sub 2}(H{sub 2}O)]·5H{sub 2}O (7) were synthesized by reactions of the corresponding metal salt with rigid ligand 1,3-di(1H-imidazol-4-yl)benzene (H{sub 2}L) and different carboxylic acids of 1,3-benzenedicarboxylic acid (H{sub 2}mbdc) and benzene-1,3,5-tricarboxylic acid (H{sub 3}btc), respectively. The results of X-ray crystallographic analysis indicate that complex 1 is 1D chain while 2 is a (3,3)-connected 2D network with Point (Schläfli) symbol of (4,8{sup 2}). Complexes 3 and 6 are 2D networks, 4 ismore » a 3-fold interpenetrating 3D framework with Point (Schläfli) symbol of (6{sup 5},8) and 5 is a (3,8)-connected 2D network with Point (Schläfli) symbol of (3,4{sup 2}){sub 2}(3{sup 4},4{sup 6},5{sup 6},6{sup 8},7{sup 3},8), while 7 is a (3,10)-connected 3D net with Schläfli symbol of (3,4,5){sub 2}(3{sup 4},4{sup 8},5{sup 18},6{sup 12},7{sup 2},8). The thermal stability and photoluminescence of the complexes were investigated. Furthermore, DFT calculations were performed for 2–4 to discuss the temperature controlled self-assembly of the complexes. - Graphical abstract: Seven new coordination polymers with multicarboxylate and rigid ditopic 4-imidazole containing ligands have been obtained and found to show different structures and topologies. - Highlights: • Metal complexes with diverse structures of 1D chain, 2D network and 3D framework. • Mixed ligands of 1,3-di(1H-imidazol-4-yl)benzene and multicarboxylate. • Photoluminescence property.« less

Flower-like nanostructure MNb{sub 2}O{sub 6} (M = Mn, Zn) with high surface area: Hydrothermal synthesis and enhanced photocatalytic performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Xue; Jing, Yan; Yang, Jia

Graphical abstract: - Highlights: • MNb{sub 2}O{sub 6} was prepared by a mild two-step hydrothermal method. • Their flower-like nanostructure morphology was studied by SEM and TEM. • High BET surface areas for MnNb{sub 2}O{sub 6} (∼50 m{sup 2}/g) and ZnNb{sub 2}O{sub 6} (∼100 m{sup 2}/g). • Band gap energies were estimated by UV–vis diffuse reflectance spectra. • Photocatalytic activities were evaluated under UV-light irradiation. - Abstract: Nano-scaled MNb{sub 2}O{sub 6} (M = Mn, Zn) was successfully synthesized via a two-step hydrothermal method. It is important to control the exact pH of the reaction solution in order to obtain puremore » products. The as-prepared samples both crystallize in the columbite structure. Interestingly, the products possess a flower-like morphology in a pseudo-six-fold symmetry, which is in fact arrayed by two-dimensional nanosheets. Their surface areas (51 m{sup 2}/g for MnNb{sub 2}O{sub 6} and 103 m{sup 2}/g for ZnNb{sub 2}O{sub 6}) are about 25–50 times of those prepared by solid state reaction. UV–vis diffuse reflectance spectra show the nano-scaled sample has a stronger absorption and a narrower band gap than its bulk form. The estimated band gap energies are 2.70 eV (MnNb{sub 2}O{sub 6}) and 3.77 eV (ZnNb{sub 2}O{sub 6}), respectively. The nano-scaled ZnNb{sub 2}O{sub 6} exhibits a double enhancement of photocatalytic activity in the decolorization of methylene blue than bulk ZnNb{sub 2}O{sub 6}.« less

Facile Hydrothermal Preparation of ZNO/CO3O4 Heterogeneous Nanostructures and its Photovoltaic Effect

NASA Astrophysics Data System (ADS)

Wei, Fanan; Jiang, Minlin; Liu, Lianqing

2015-07-01

Photovoltaic technology offers great potential in the replacement of fossil fuel resources, but still suffers from high device fabrication cost. Herein, we attempted to provide a solution to these issues with heterogeneous nanostructures. Firstly, Zinc oxide (ZnO)/cobalt oxide (Co3O4) heterojunction nanowires are prepared through facile fabrication methods. By assembling Co(OH)2 nanoplates on ZnO nanowire arrays, the ZnO/Co3O4 heterogeneous nanostructures are uniformly synthesized on ITO coated glass and wafer. Current (I)-voltage (V) measurement through conductive atomic force microscope shows excellent photovoltaic effect. And, the heterojunction nanostructures shows unprecedented high open circuit voltage. Therefore, the potential application of the heterogeneous nanostructures in solar cells is demonstrated.