In situ monitoring of laser-assisted hydrothermal growth of ZnO nanowires: thermally deactivating growth kinetics.

PubMed

In, Jung Bin; Kwon, Hyuk-Jun; Lee, Daeho; Ko, Seung Hwan; Grigoropoulos, Costas P

2014-02-26

The laser-assisted hydrothermal growth kinetics of a cluster of ZnO nanowires are studied based on optical in situ growth monitoring. The growth yields are orders of magnitude higher than those of conventional hydrothermal methods that use bulk heating. This remarkable improvement is attributed to suppression of precursor depletion occurring by homogeneous growth reactions, as well as to enhanced mass transport. The obtained in situ data show gradually decaying growth kinetics even with negligible precursor consumption. It is revealed that the growth deceleration is caused by thermal deactivation resulting from heat dissipation through the growing nanowires. Finally, it is demonstrated that the tailored temporal modulation of the input power enables sustained growth to extended dimensions. These results provide a key to highly efficient use of growth precursors that has been pursued for industrial use of this functional metal oxide semiconductor. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement of Si solar cell efficiency using ZnO nanowires with various diameters

NASA Astrophysics Data System (ADS)

Gholizadeh, A.; Reyhani, A.; Parvin, P.; Mortazavi, S. Z.; Mehrabi, M.

2018-01-01

Here, Zinc Oxide nanowires are synthesized using thermal chemical vapor deposition of a Zn granulate source and used to enhance a significant Si-solar cell efficiency with simple and low cost method. The nanowires are grown in various O2 flow rates. Those affect the shape, yield, structure and the quality of ZnO nanowires according to scanning electron microscopy and x-ray diffraction analyses. This delineates that the ZnO nanostructure is dependent on the synthesis conditions. The photoluminescence spectroscopy of ZnO indicates optical emission at the Ultra-Violet and blue-green regions whose intensity varies as a function of diameter of ZnO nano-wires. The optical property of ZnO layer is measured by UV-visible and diffuse reflection spectroscopy that demonstrate high absorbance at 280-550 nm. Furthermore, the photovoltaic characterization of ZnO nanowires is investigated based on the drop casting on Si-solar cell. The ZnO nanowires with various diameters demonstrate different effects on the efficiency of Si-solar cells. We have shown that the reduction of the spectral reflectance and down-shifting process as well as the reduction of photon trapping are essential parameters on the efficiency of Si-solar cells. However, the latter is dominated here. In fact, the trapped photons during the electron-hole generation are dominant due to lessening the absorption rate in ZnO nano-wires. The results indicate that the mean diameters reduction of ZnO nanowires is also essential to improve the fill factor. The external and internal quantum efficiency analyses attest the efficiency improvement over the blue region which is related to the key parameters above.

CdTe quantum-dot-modified ZnO nanowire heterostructure

NASA Astrophysics Data System (ADS)

Shahi, Kanchana; Singh, R. S.; Singh, Ajaya Kumar; Aleksandrova, Mariya; Khenata, Rabah

2018-03-01

The effect of CdTe quantum-dot (QD) decoration on the photoluminescence (PL) behaviour of ZnO nanowire (NW) array is presented in the present work. Highly crystalline and vertically 40-50 nm diameter range and 1 µm in length aligned ZnO NWs are synthesized using low-cost method. The crystallinity and morphology of the NWs are studied by scanning electron microscopy and X-ray powder diffraction methods.Optical properties of the nanowires are studied using photo-response and PL spectroscopy. CdTe QDs are successfully synthesized on ZnO nanowire surface by dip-coating method. ZnO NWs are sensitized with CdTe QDs characterized by transmission electron microscopy, energy-dispersive X-ray spectroscopy, and PL spectroscopy. The highly quenched PL intensity indicates the charge transfer at interface between CdTe QDs and ZnO NWs and is due to the formation of type-II heterostructure between QDs and NWs. Photo-response behaviour of heterostructure of the film is also been incorporated in the present work.

Performance improvement of miniaturized ZnO nanowire accelerometer fabricated by refresh hydrothermal synthesis

PubMed Central

Song, Sangho; Kim, Hyun Chan; Kim, Jung Woong; Kim, Debora

2017-01-01

Miniaturized accelerometers are necessary for evaluating the performance of small devices, such as haptics, robotics and simulators. In this study, we fabricated miniaturized accelerometers using well-aligned ZnO nanowires. The layer of ZnO nanowires is used for active piezoelectric layer of the accelerometer, and copper was chosen as a head mass. Seedless and refresh hydrothermal synthesis methods were conducted to grow ZnO nanowires on the copper substrate and the effect of ZnO nanowire length on the accelerometer performance was investigated. The refresh hydrothermal synthesis exhibits longer ZnO nanowires, 12 µm, than the seedless hydrothermal synthesis, 6 µm. Performance of the fabricated accelerometers was verified by comparing with a commercial accelerometer. The sensitivity of the fabricated accelerometer by the refresh hydrothermal synthesis is shown to be 37.7 pA g−1, which is about 30 times larger than the previous result. PMID:28989760

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer.

PubMed

Liu, Jinzhang; Motta, Nunzio; Lee, Soonil

2012-01-01

ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

DOE PAGES

Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; ...

2016-04-11

In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

PubMed Central

Motta, Nunzio; Lee, Soonil

2012-01-01

Summary ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse. PMID:23016139

Effects of mechanical strain on optical properties of ZnO nanowire

NASA Astrophysics Data System (ADS)

Vazinishayan, Ali; Lambada, Dasaradha Rao; Yang, Shuming; Zhang, Guofeng; Cheng, Biyao; Woldu, Yonas Tesfaye; Shafique, Shareen; Wang, Yiming; Anastase, Ndahimana

2018-02-01

The main objective of this study is to investigate the influences of mechanical strain on optical properties of ZnO nanowire (NW) before and after embedding ZnS nanowire into the ZnO nanowire, respectively. For this work, commercial finite element modeling (FEM) software package ABAQUS and three-dimensional (3D) finite-difference time-domain (FDTD) methods were utilized to analyze the nonlinear mechanical behavior and optical properties of the sample, respectively. Likewise, in this structure a single focused Gaussian beam with wavelength of 633 nm was used as source. The dimensions of ZnO nanowire were defined to be 12280 nm in length and 103.2 nm in diameter with hexagonal cross-section. In order to investigate mechanical properties, three-point bending technique was adopted so that both ends of the model were clamped with mid-span under loading condition and then the physical deformation model was imported into FDTD solutions to study optical properties of ZnO nanowire under mechanical strain. Moreover, it was found that increase in the strain due to the external load induced changes in reflectance, transmittance and absorptance, respectively.

Hydrothermal growth of ZnO nanowire arrays: fine tuning by precursor supersaturation

DOE PAGES

Yan, Danhua; Cen, Jiajie; Zhang, Wenrui; ...

2016-12-20

In this paper, we develop a technique that fine tunes the hydrothermal growth of ZnO nanowires to address the difficulties in controlling their growth in a conventional one-pot hydrothermal method. In our technique, precursors are separately and slowly supplied with the assistance of a syringe pump, through the entire course of the growth. Compared to the one-pot method, the significantly lowered supersaturation of precursors helps eliminating competitive homogeneous nucleation and improves the reproducibility. The supersaturation degree can be readily tuned by the precursor quantity and injection rate, thus forming ZnO nanowire arrays of various geometries and packing densities in amore » highly controllable fashion. The precise control of ZnO nanowire growth enables systematic studies on the correlation between the material's properties and its morphology. Finally, in this work, ZnO nanowire arrays of various morphologies are studied as photoelectrochemical (PEC) water splitting photoanodes, in which we establish clear correlations between the water splitting performance and the nanowires' size, shape, and packing density.« less

Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays

PubMed Central

2014-01-01

Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol–gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucleation sites, and the original hexagonal periodicity is well-preserved. According to the experimental results, the vapor transport solid condensation mechanism was proposed, in which the sol–gel-derived ZnO film acting as a seed layer for nucleation. This simple method provides a favorable way to form quasi-1D ZnO nanostructures applicable to diverse fields such as two-dimensional photonic crystal, nanolaser, sensor arrays, and other optoelectronic devices. PMID:24521308

A low-temperature ZnO nanowire ethanol gas sensor prepared on plastic substrate

NASA Astrophysics Data System (ADS)

Lin, Chih-Hung; Chang, Shoou-Jinn; Hsueh, Ting-Jen

2016-09-01

In this work, a low-temperature ZnO nanowire ethanol gas sensor was prepared on plastic substrate. The operating temperature of the ZnO nanowire ethanol gas sensor was reduced to room temperature using ultraviolet illumination. The experimental results indicate a favorable sensor response at low temperature, with the best response at 60 °C. The results also reveal that the ZnO nanowire ethanol gas sensor can be easily integrated into portable products, whose waste heat can improve sensor response and achieve energy savings, while energy consumption can be further reduced by solar irradiation.

Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis.

PubMed

Shih, Po-Hsun; Wu, Sheng Yun

2017-07-21

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.

Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis

PubMed Central

Shih, Po-Hsun

2017-01-01

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion. PMID:28754030

A simple and transparent well-aligned ZnO nanowire array ultraviolet photodetector with high responsivity

NASA Astrophysics Data System (ADS)

Yin, Lei; Ding, Hesheng; Yuan, Zhaolin; Huang, Wendeng; Shuai, Chunjiang; Xiong, Zhaoxin; Deng, Jianping; Lv, Tengbo

2018-06-01

Well-aligned zinc oxide (ZnO) nanowire arrays were grown on an interdigital patterned fluorine tin oxide (FTO)-coated glass substrate by a facile chemical bath deposition at low temperature. Morphology, crystalline structure, and optical properties of the ZnO nanowire arrays were analyzed in detail. The results revealed that the ZnO nanowires had wurtzite structure, typically ∼40-60 nm in diameter, and ∼700-800 nm in length, a great number of highly uniform and dense nanowires grew vertically on the substrate to form the well-aligned ZnO nanowire arrays, which had very high optical transmission (>86%) in the visible light region. In addition, the performance of ZnO nanowire arrays ultraviolet (UV) photodetector was systematically examined. The photosensitivity (S), responsivity (R), response and decay time of the photodetector were 703 at +0.2 V, 113 A/W at +5 V, 23 s and 73 s respectively. Also, the photoresponse mechanism of the UV photodetector was illuminated in terms of the oxygen adsorption-photodesorption process.

ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

PubMed

Yang, Wenming; Zhu, Rong; Zong, Xianli

2016-12-01

Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications.

Hydrothermal growth of ZnO nanowires on flexible fabric substrates

NASA Astrophysics Data System (ADS)

Hong, Gwang-Wook; Yun, Sang-Ho; Kim, Joo-Hyung

2016-04-01

ZnO nanowires (NWs) would provide significant enhancement in sensitivity due to high surface to volume ratio. We investigated the first methodical study on the quantitative relationship between the process parameters of solution concentration ratio, structure, and physical and properties of ZnO NWs grown on different flexible fabric surfaces. To develop a fundamental following concerning various substrates, we controlled the growth speed of ZnO NWs and nanowires on cotton surface with easy and moderate cost fabrication method. Using ammonium hydroxide as the reactant with zinc nitrate hexahydrate, ZnO NWs layer have been grown on metal layers, instead of seed layer. ZnO NWs fabrication was done on different fabric substrates such as wool, nylon and polypropylene (PP). After the ZnO NWs grown to each substrates, we coated insulating layer with polyurethane (PU) and ethyl cellulose for prevent external intervention. Detailed electrical characterization was subsequently performed to reveal the working characteristics of the hybrid fabric. For electrical verification of fabricated ZnO NWs, we implemented measurement impact test and material properties with FFT analyzer and LCR meter.

Fabrication and Performance Study on Individual Zno Nanowires Based Bioelectrode

NASA Astrophysics Data System (ADS)

Zhao, Yanguang; Yan, Xiaoqin; Kang, Zhuo; Lin, Pei

2012-08-01

One-dimensional zinc oxide nanowires (ZnO NWs) have unique advantages for use in biosensors as follows: oxide stable surface, excellent biosafety, high specific surface area, high isoelectric point (IEP = 9.5). In this work, we have prepared a kind of electrochemical bioelectrode based on individual ZnO NWs. Here, ZnO NWs with high quality were successfully synthesized by CVD method, which were characterized by scanning electron microscopy, X-ray diffraction and photoluminescence. Then the Raman spectra and electrical characterization demonstrated the adsorption of uricase on ZnO wires. At last, a series of electrochemical measurements were carried out by using an electrochemical workstation with a conventional three-electrode system to obtain the cyclic voltammetry characteristics of the bioelectrodes. The excellent performance of the fabricated bioelectrode implies the potential application for single ZnO nanowire to construct electrochemical biosensor for the detection of uric acid.

Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

DTIC Science & Technology

2012-01-01

12] J. P. Liu, C. X. Guo, C. M. Li et al., “Carbon-decorated ZnO nanowire array: a novel platform for direct electrochemistry of enzymes and...cited. Vertically aligned, high-density ZnO nanowires (NWs) were grown for the first time on c-plane sapphire using binary alloys of Ni/Au or Cu/Au as...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

Selectivity shifting behavior of Pd nanoparticles loaded zinc stannate/zinc oxide (Zn2SnO4/ZnO) nanowires sensors

NASA Astrophysics Data System (ADS)

Arafat, M. M.; Ong, J. Y.; Haseeb, A. S. M. A.

2018-03-01

In this research, the gas sensing behavior of Pd nanoparticles loaded zinc stannate/zinc oxide (Zn2SnO4/ZnO) nanowires were investigated. The Zn2SnO4/ZnO nanowires were grown on Au interdigitated alumina substrate by carbon assisted thermal evaporation process. Pd nanoparticles were loaded on the Zn2SnO4/ZnO nanowires by wet reduction process. The nanowires were characterized by X-ray diffractometer, field emission scanning electron microscope and energy dispersive X-ray spectroscope. The Zn2SnO4/ZnO and Pd nanoparticles loaded Zn2SnO4/ZnO nanowires were investigated for detecting H2, H2S and C2H5OH gases in N2 background. Results revealed that the average diameter and length of as-grown Zn2SnO4/ZnO nanowires were 74 nm and 30 μm, respectively. During wet reduction process,Pd particles having size of 20-60 nm were evenly distributed on the Zn2SnO4/ZnO nanowires. The Zn2SnO4/ZnO nanowires based sensors showed selective response towards C2H5OH whereas Pd nanoparticles loaded Zn2SnO4/ZnO nanowires showed selective response towards H2. The recovery time of the sensors reduced with Pd loading on Zn2SnO4/ZnO nanowires. A mechanism is proposed to elucidate the gas sensing mechanism of Pd nanoparticles loaded Zn2SnO4/ZnO nanowires.

Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient

NASA Astrophysics Data System (ADS)

Madel, M.; Huber, F.; Mueller, R.; Amann, B.; Dickel, M.; Xie, Y.; Thonke, K.

2017-03-01

ZnO nanowires typically show persistent photoconductivity (PPC), which depends in their temporal behaviour on the ambient. We investigate ZnO nanowires in oxygen and argon ambient and analyze the PPC both on the short and on the long time scale to sort out the underlying mechanisms. Wavelength dependent excitation shows the energy barrier for the PPC to be around 150 meV below the band gap of ZnO, independent of the ambient atmosphere. In photocurrent measurements at constant wavelength, a log-logistic dependence of the conductivity on the partial oxygen pressure is observed. The experimental results are compared to a model of Bonasewicz et al. [J. Electrochem. Soc. 133, 2270 (1986)] and can be explained by oxygen adsorption processes occurring on the surface of the ZnO nanowires. From temperature dependent measurements of the decay times in oxygen and argon ambient, the related activation energies for the fast and slow decay processes are determined. Comparing our results to theoretical calculations of energy levels of intrinsic defects [Janotti and Van de Walle, Phys. Status Solidi B 248, 799 (2011)], we find oxygen vacancies to be related to the fast decay processes, whereas adsorption and desorption processes of oxygen on the ZnO nanowire surface account for the slow part.

Quantum dots coupled ZnO nanowire-array panels and their photocatalytic activities.

PubMed

Liao, Yulong; Que, Wenxiu; Zhang, Jin; Zhong, Peng; Yuan, Yuan; Qiu, Xinku; Shen, Fengyu

2013-02-01

Fabrication and characterization of a heterojunction structured by CdS quantum dots@ZnO nanowire-array panels were presented. Firstly, ZnO nanowire-array panels were prepared by using a chemical bath deposition approach where wurtzite ZnO nanowires with a diameter of about 100 nm and 3 microm in length grew perpendicularly to glass substrate. Secondly, CdS quantum dots were deposited onto the surface of the ZnO nanowire-arrays by using successive ion layer absorption and reaction method, and the CdS shell/ZnO core heterojunction were thus obtained. Field emission scanning electron microscopy and transmission electron microscope were employed to characterize the morphological properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. X-ray diffraction was adopted to characterize the crystalline properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. Methyl orange was taken as a model compound to confirm the photocatalytic activities of the CdS shell/ZnO core heterojunction. Results indicate that CdS with narrow band gap not only acts as a visible-light sensitizer but also is responsible for an effective charge separation.

Electrical tuning of spin splitting in Bi-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Kılıç, ćetin

2018-01-01

The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the framework of density functional theory. It is demonstrated that spin splitting in Bi-doped ZnO nanowires could be tuned and enhanced electrically via control of the strength and direction of the applied electric field, thanks to the nonuniform and anisotropic response of the ZnO:Bi nanowire to external electric fields. The results reported here indicate that a single ZnO nanowire doped with a low concentration of Bi could function as a spintronic device, the operation of which is controlled by applied lateral electric fields.

Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, C.; Golberg, D., E-mail: xuzhi@iphy.ac.cn, E-mail: golberg.dmitri@nims.go.jp; Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1, Tsukuba, Ibaraki 3058577

2015-08-31

Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structuremore » of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.« less

Effect of gamma radiation on the optical and structural properties of ZnO nanowires with various diameters

NASA Astrophysics Data System (ADS)

Reyhani, A.; Gholizadeh, A.; vahedi, V.; Khanlary, M. R.

2018-01-01

The effects of gamma-irradiation are studied on the morphology and structural properties of ZnO nanowire with various diameters. The ZnO nanowires are grown using Zn thin films at various initial thicknesses including 125, 250 and 500 nm in air ambient. The results illustrate dramatic effects of Gamma-irradiation on the deformation of ZnO nanowires. Thus, radiation induce ripple ZnO surfaces instead ZnO nanowires. Gamma-irradiation has also been effective on the optical and crystalline properties of the nanowires. X-ray diffraction attests that size of the ZnO nano-structures has changed and (l00) crystalline direction related to Zn metal has been created after irradiation. UV-Visible spectra display two areas for transmittance of irradiated ZnO nanowires, one in the Visible-light and the other in IR sub-region. In the Visible-light area, the layer gets thicker from 125 to 500 nm; the difference between the layer transmittance spectra is reduced before and after gamma irradiation. In the IR-light region, with increasing of ZnO initial thickness, the difference between the layer transmittance spectra is increased before and after gamma irradiation. The photoluminescence spectroscopy displays that intensity of green-yellow band improves in compared to near-band-edge emission due to formation of Zn metal and oxygen vacancies after gamma irradiation.

Power generation from base excitation of a Kevlar composite beam with ZnO nanowires

NASA Astrophysics Data System (ADS)

Malakooti, Mohammad H.; Hwang, Hyun-Sik; Sodano, Henry A.

2015-04-01

One-dimensional nanostructures such as nanowires, nanorods, and nanotubes with piezoelectric properties have gained interest in the fabrication of small scale power harvesting systems. However, the practical applications of the nanoscale materials in structures with true mechanical strengths have not yet been demonstrated. In this paper, piezoelectric ZnO nanowires are integrated into the fiber reinforced polymer composites serving as an active phase to convert the induced strain energy from ambient vibration into electrical energy. Arrays of ZnO nanowires are grown vertically aligned on aramid fibers through a low-cost hydrothermal process. The modified fabrics with ZnO nanowires whiskers are then placed between two carbon fabrics as the top and the bottom electrodes. Finally, vacuum resin transfer molding technique is utilized to fabricate these multiscale composites. The fabricated composites are subjected to a base excitation using a shaker to generate charge due to the direct piezoelectric effect of ZnO nanowires. Measuring the generated potential difference between the two electrodes showed the energy harvesting application of these multiscale composites in addition to their superior mechanical properties. These results propose a new generation of power harvesting systems with enhanced mechanical properties.

The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, L.; Lu, H. B.; Li, J. C.

2007-10-22

In this letter, we present a gas sensor using a single ZnO nanowire as a sensing unit. This ZnO nanowire-based sensor has quick and high sensitive response to H{sub 2}S in air at room temperature. It has also been found that the gas sensitivity of the ZnO nanowires could be modulated and enhanced by He{sup +} implantation at an appropriate dose. A possible explanation is given based on the modulation model of the depletion layer.

Rapidly synthesized ZnO nanowires by ultraviolet decomposition process in ambient air for flexible photodetector.

PubMed

Wu, Jyh Ming; Chen, Yi-Ru; Lin, Yu-Hung

2011-03-01

We are the first group to use a simple direct ultraviolet light (UV, λ=365 nm, I=76 mW cm(-2)) in a decomposition process to fabricate ZnO nanowires on a flexible substrate using a zinc acetylacetonate hydrate precursor in ambient air. ZnO nanocrystal (or nanowire) production only requires three to ten minutes. A field emission scanning electron microscopy (FESEM) image reveals a high aspect ratio of the ZnO nanowires, which are grown on a substrate with a diameter of ∼50-100 nm, and a length of up to several hundred microns. High resolution transmission electron microscopy (HRTEM) images reveal that the nanowires consist of many single crystalline ZnO nanoparticles that grow along the c axis, which suggests an oriented attachment process. A potential application for flexible UV photodetectors was investigated using a UV lamp (λ=365 nm, I=2.34 mW cm(-2)). A significant ratio of photocurrent to dark current--around 11,300%--was achieved.

Effect of cobalt doping on the mechanical properties of ZnO nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vahtrus, Mikk; Šutka, Andris

In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases weremore » close to theoretical strength indicating high quality of NWs. Dependence of mechanical properties on NW diameter was found for both doped and undoped ZnO NWs. - Highlights: •Effect of Co doping on the mechanical properties of ZnO nanowires is studied. •Co substitutes Zn atoms in ZnO crystal lattice. •Co addition affects crystal lattice parameters. •Co addition results in significantly decreased Young's modulus of ZnO. •Bending strength for doped and undoped wires is close to the theoretical strength.« less

III-Nitride Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wright, Jeremy Benjamin

2014-07-01

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices.more » Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that

Functionalized ZnO nanowires for microcantilever biosensors with enhanced binding capability.

PubMed

Stassi, Stefano; Chiadò, Alessandro; Cauda, Valentina; Palmara, Gianluca; Canavese, Giancarlo; Laurenti, Marco; Ricciardi, Carlo

2017-04-01

An efficient way to increase the binding capability of microcantilever biosensors is here demonstrated by growing zinc oxide nanowires (ZnO NWs) on their active surface. A comprehensive evaluation of the chemical compatibility of ZnO NWs brought to the definition of an innovative functionalization method able to guarantee the proper immobilization of biomolecules on the nanostructured surface. A noteworthy higher amount of grafted molecules was evidenced with colorimetric assays on ZnO NWs-coated devices, in comparison with functionalized and activated silicon flat samples. ZnO NWs grown on silicon microcantilever arrays and activated with the proposed immobilization strategy enhanced the sensor binding capability (and thus the dynamic range) of nearly 1 order of magnitude, with respect to the commonly employed flat functionalized silicon devices. Graphical Abstract An efficient way to increase the binding capability of microcantilever biosensors is represented by growing zinc oxide nanowires (ZnO NWs) on their active surface. ZnO NWs grown on silicon microcantilever arrays and activated with an innovative immobilization strategy enhanced the sensor binding capability of nearly 1 order of magnitude, with respect to the commonly employed flat functionalized silicon devices.

Photo-assisted hysteresis of electronic transport for ZnO nanowire transistors

NASA Astrophysics Data System (ADS)

Du, Qianqian; Ye, Jiandong; Xu, Zhonghua; Zhu, Shunming; Tang, Kun; Gu, Shulin; Zheng, Youdou

2018-03-01

Recently, ZnO nanowire field effect transistors (FETs) have received renewed interest due to their extraordinary low dimensionality and high sensitivity to external chemical environments and illumination conditions. These prominent properties have promising potential in nanoscale chemical and photo-sensors. In this article, we have fabricated ZnO nanowire FETs and have found hysteresis behavior in their transfer characteristics. The mechanism and dynamics of the hysteresis phenomena have been investigated in detail by varying the sweeping rate and range of the gate bias with and without light irradiation. Significantly, light irradiation is of great importance on charge trapping by regulating adsorption and desorption of oxygen at the interface of ZnO/SiO2. Carriers excited by light irradiation can dramatically promote trapping/detrapping processes. With the assistance of light illumination, we have demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire FET. The device exhibits reliable programming/erasing operations and a large on/off ratio. The proposed proto-type memory has thus provided a possible novel path for creating a memory functionality to other low-dimensional material systems.

Direct synthesis of vertically aligned ZnO nanowires on FTO substrates using a CVD method and the improvement of photovoltaic performance

PubMed Central

2012-01-01

In this work, we report a direct synthesis of vertically aligned ZnO nanowires on fluorine-doped tin oxide-coated substrates using the chemical vapor deposition (CVD) method. ZnO nanowires with a length of more than 30 μm were synthesized, and dye-sensitized solar cells (DSSCs) based on the as-grown nanowires were fabricated, which showed improvement of the device performance compared to those fabricated using transferred ZnO nanowires. Dependence of the cell performance on nanowire length and annealing temperature was also examined. This synthesis method provided a straightforward, one-step CVD process to grow relatively long ZnO nanowires and avoided subsequent nanowire transfer process, which simplified DSSC fabrication and improved cell performance. PMID:22673046

Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

PubMed

Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

2007-06-01

We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

NASA Astrophysics Data System (ADS)

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.

PubMed

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-13

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min(-1)), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10(5), a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm(2) V(-1) s(-1). The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate

PubMed Central

2013-01-01

Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer. PMID:24252130

Hierarchically structured nanowires on and nanosticks in ZnO microtubes

PubMed Central

Rivaldo-Gómez, C. M.; Cabrera-Pasca, G. A.; Zúñiga, A.; Carbonari, A. W.; Souza, J. A.

2015-01-01

We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions. PMID:26456527

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires

DTIC Science & Technology

2008-11-01

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires Lena Mazeina,* Yoosuf N. Picard, and Sharka M. Prokes Electronics...Manuscript ReceiVed NoVember 6, 2008 ABSTRACT: Novel hierarchical ZnO- Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3 ...nanobrushes (NBs) with Ga2O3 as the core and ZnO as the branches self-assembling symmetrically in six equiangular directions around the core

Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N., E-mail: ramakrishnan@monash.edu

Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use ofmore » a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.« less

MOF-Based Membrane Encapsulated ZnO Nanowires for Enhanced Gas Sensor Selectivity.

PubMed

Drobek, Martin; Kim, Jae-Hun; Bechelany, Mikhael; Vallicari, Cyril; Julbe, Anne; Kim, Sang Sub

2016-04-06

Gas sensors are of a great interest for applications including toxic or explosive gases detection in both in-house and industrial environments, air quality monitoring, medical diagnostics, or control of food/cosmetic properties. In the area of semiconductor metal oxides (SMOs)-based sensors, a lot of effort has been devoted to improve the sensing characteristics. In this work, we report on a general methodology for improving the selectivity of SMOx nanowires sensors, based on the coverage of ZnO nanowires with a thin ZIF-8 molecular sieve membrane. The optimized ZnO@ZIF-8-based nanocomposite sensor shows markedly selective response to H2 in comparison with the pristine ZnO nanowires sensor, while showing the negligible sensing response to C7H8 and C6H6. This original MOF-membrane encapsulation strategy applied to nanowires sensor architecture pave the way for other complex 3D architectures and various types of applications requiring either gas or ion selectivity, such as biosensors, photo(catalysts), and electrodes.

Electrical properties of lightly Ga-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Alagha, S.; Heedt, S.; Vakulov, D.; Mohammadbeigi, F.; Senthil Kumar, E.; Schäpers, Th; Isheim, D.; Watkins, S. P.; Kavanagh, K. L.

2017-12-01

We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration ({10}18 {{cm}}-3). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration.

ZnO nanowires: Synthesis and charge transfer mechanism in the detection of ammonia vapour

NASA Astrophysics Data System (ADS)

Nancy Anna Anasthasiya, A.; Ramya, S.; Rai, P. K.; Jeyaprakash, B. G.

2018-01-01

ZnO nanowires with hexagonal wurtzite structure were grown on the glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method. Both experimental and theoretical studies demonstrated that NH3 chemisorbed and transferred the charge to the surface of the nanowire via its nitrogen site to the zinc site of ZnO nanowires, leading to the detection of NH3 vapour. The adsorbed ammonia dissociated into NH2 and H due to steric repulsion, and then into N2 and H2 gas. The formation of the N2 gas during the desorption process confirmed by observing peak at 14 and 28 m/z in the GC-MS spectrum.

Reconstruction of perfect ZnO nanowires facets with high optical quality

NASA Astrophysics Data System (ADS)

Zehani, E.; Hassani, S.; Lusson, A.; Vigneron, J.; Etcheberry, A.; Galtier, P.; Sallet, V.

2017-07-01

ZnO nanowires were grown on sapphire substrates using metalorganic chemical vapor deposition. The samples were subsequently annealed under zinc pressure in a vacuum-sealed ampoule, at temperature ranging from 500 to 800 °C. The originality and the main motivation to provide a zinc-rich atmosphere were to prevent the out-diffusion of zinc from the nanowires. In doing so, the perfect structural properties and the morphology of the nanowires are kept. Interestingly, photoluminescence experiments performed on nanowires annealed in a narrow window of temperature [580-620 °C] show a spectacular improvement of the optical quality, as transitions commonly observable in high quality bulk samples are found. In addition, the intensity of the so-called "surface excitons" (SX) is strongly decreased. To accurately investigate the chemical modifications of the surface, XPS experiments were carried out and show that zinc hydroxide species and/or Zn(OH)2 sublayer were partially removed from the surface. These results suggest that the annealing process in zinc vapor helps to properly reconstruct the surface of ZnO nanowires, and improves the optical quality of their core. Such a thermal treatment at moderate temperature should be beneficial to nanodevices involving surface reaction, e.g. gas sensors.

An optimal thermal evaporation synthesis of c-axis oriented ZnO nanowires with excellent UV sensing and emission characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Tridib, E-mail: tridib.saha@monash.edu; Achath Mohanan, Ajay, E-mail: ajay.mohanan@monash.edu; Swamy, Varghese, E-mail: varghese.swamy@monash.edu

Highlights: • c-Axis alignment of ZnO nanowires was optimized using self-seeding thermal evaporation method. • Influence of purified air on the morphology and optoelectronic properties were studied. • Nanowires grown under optimal conditions exhibit strong UV emission peak in PL spectrum. • Optimized growth condition establish nanowires of excellent UV sensing characteristics - Abstract: Well-aligned (c-axis oriented) ZnO nanowire arrays were successfully synthesized on Si (1 0 0) substrates through an optimized self-seeding thermal evaporation method. An open-ended chemical vapor deposition (CVD) setup was used in the experiment, with argon and purified air as reaction gases. Epitaxial growth of c-axismore » oriented ZnO nanowires was observed for 5 sccm flow rate of purified air, whereas Zn/Zn suboxide layers and multiple polycrystalline layers of ZnO were obtained for absence and excess of purified air, respectively. Ultraviolet (UV) sensing and emission properties of the as-grown ZnO nanostructures were investigated through the current–voltage (I–V) characteristics of the nanowires under UV (λ = 365 nm) illumination of 8 mW/cm{sup 2} and using photoluminescence spectra. Nanowires grown under optimum flow of air emitted four times higher intensity of 380 nm UV light as well as exhibited 34 times higher UV radiation sensitivity compared to that of other nanostructures synthesized in this study.« less

Synthesis of ZnO nanowires for thin film network transistors

NASA Astrophysics Data System (ADS)

Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.

2008-08-01

Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.

Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

NASA Astrophysics Data System (ADS)

Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-05-01

Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.

Enhanced H2 sensitivity at room temperature of ZnO nanowires functionalized by Pd nanoparticles

NASA Astrophysics Data System (ADS)

Ren, Shoutian; Fan, Guanghua; Qu, Shiliang; Wang, Qiang

2011-10-01

For sensitive detection of H2, ZnO nanowires networks decorated with photo-decomposed Pd nanoparticles were fabricated between femtosecond laser-writing interdigitated electrodes by chemical vapor deposition method. When H2 concentration is increased from 20 to 4000 ppm at room temperature, sensitivity of the sample is increased from 3.7% to 1017.9%. The high sensitivity can be explained by considering the reaction between the adsorbed O2- and the disassociated H atoms facilitated by Pd nanoparticles. This mechanism is further supported by the H2 response results under UV light illumination, which can reduce the amount of O2- on the ZnO surface, leading to depressed sensitivity. The sensor also shows high selectivity, long-term stability, and ultra-low power consumption of nanowatt level, due to the novel fabrication process.

Transmission type flat-panel X-ray source using ZnO nanowire field emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng

2015-12-14

A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at amore » range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.« less

Doping-induced spin-orbit splitting in Bi-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Güler-Kılıç, Sümeyra; Kılıç, ćetin

2017-04-01

Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-k splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the symmetry in the presence of the dopant. This finding implies that spin polarization of the conduction electrons in Bi-doped ZnO nanowires could be controlled with applied electric (as opposed to magnetic) fields, making them candidate materials for spin-orbitronic applications. Our findings also show that the degree of spin splitting could be tuned by adjusting the dopant concentration. Defect calculations and ab initio molecular dynamics simulations indicate that stable doping configurations exhibiting the foregoing linear-in-k splitting could be realized under reasonable thermodynamic conditions.

Abnormal temperature dependence of conductance of single Cd-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Li, Q. H.; Wan, Q.; Wang, Y. G.; Wang, T. H.

2005-06-01

Positive temperature coefficient of resistance is observed on single Cd-doped ZnO nanowires. The current along the nanowire increases linearly with the bias and saturates at large biases. The conductance is greatly enhanced either by ultraviolet illumination or infrared illumination. However, the conductance decreases with increasing temperature, in contrast to the reported temperature behavior either for ZnO nanostructures or for CdO nanoneedles. The increase of the conductance under illumination is related to surface effect and the decrease with increasing temperature to bulk effect. These results show that Cd doping does not change surface effect but affects bulk effect. Such a bulk effect could be used to realize on-chip temperature-independent varistors.

Integration of ZnO and CuO nanowires into a thermoelectric module

PubMed Central

Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

2014-01-01

Summary Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices. PMID:24991531

Integration of ZnO and CuO nanowires into a thermoelectric module.

PubMed

Zappa, Dario; Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

2014-01-01

Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices.

Efficient photocatalytic performance enhancement in Co-doped ZnO nanowires coupled with CuS nanoparticles

NASA Astrophysics Data System (ADS)

Li, Wei; Wang, Guojing; Feng, Yimeng; Li, Zhengcao

2018-01-01

In this research, a kind of highly efficient semiconductor photocatalyst was fabricated by depositing CuS nanoparticles uniformly on the surface of Co-doped ZnO nanowires. ZnO nanowires were synthesized by hydrothermal method and CuS nanoparticles were modified by successive ionic layer adsorption and reaction (SILAR). By conducting methyl orange (MO) degradation experiments under the illumination of visible light, the photocatalytic activity of Co-doped ZnO nanowires modified with CuS nanoparticles was found to be nearly three times active when compared to bare ZnO nanowires. Its superior photocatalytic performance has two main reasons. The doped Co2+ ions can inhibit the recombination of photo-generated electron-hole pairs and decrease the optical bandgap, while the p-n heterostructure can enhance the visible light absorption ability and promote the separation of photo-excited charge carriers. Furthermore, the effect of the amount of deposited CuS nanoparticles on the photocatalysis was also investigated. The photocatalytic efficiency firstly raised along with the increment of SILAR cycle times and reached a maximum at 10 cycles but then decreased as the cycle times continue to increase. This originates from that an excessive amount of CuS would not only cover the active reacting sites, but also serve as recombination centers. Overall, this new nanostructure is expected to work as an efficient photocatalyst.

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M.; Hassan, Z.

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM),more » and UV-Vis spectrophotometer.« less

Ultra-fast microwave-assisted hydrothermal synthesis of long vertically aligned ZnO nanowires for dye-sensitized solar cell application.

PubMed

Mahpeykar, S M; Koohsorkhi, J; Ghafoori-Fard, H

2012-04-27

Long vertically aligned ZnO nanowire arrays were synthesized using an ultra-fast microwave-assisted hydrothermal process. Using this method, we were able to grow ZnO nanowire arrays at an average growth rate as high as 200 nm min(-1) for maximum microwave power level. This method does not suffer from the growth stoppage problem at long growth times that, according to our investigations, a normal microwave-assisted hydrothermal method suffers from. Longitudinal growth of the nanowire arrays was investigated as a function of microwave power level and growth time using cross-sectional FESEM images of the grown arrays. Effect of seed layer on the alignment of nanowires was also studied. X-ray diffraction analysis confirmed c-axis orientation and single-phase wurtzite structure of the nanowires. J-V curves of the fabricated ZnO nanowire-based mercurochrome-sensitized solar cells indicated that the short-circuit current density is increased with increasing the length of the nanowire array. According to the UV-vis spectra of the dyes detached from the cells, these increments were mainly attributed to the enlarged internal surface area and therefore dye loading enhancement in the lengthened nanowire arrays.

Lattice diffusion and vapor solid growths forming nanoarchitectures on ZnO nanowires

NASA Astrophysics Data System (ADS)

Sombrio, Guilherme; Rivaldo-Gómez, C. M.; Pomar, Cesar A. D.; Souza, Jose A.

2017-12-01

We report hierarchical nanoarchitectures formed on the tips and sidewalls of ZnO nanowires which is formed on the top of microtubes. The whole growth process of these micro/nanostructures during thermal oxidation combines lattice/grain/surface ionic diffusion along with vapor solid mechanism. All the process takes place along with the presence of an electric current, which plays an important role forming the ZnO molecules due to Zn metal evaporation and attracting them to condense into nanostructures of several morphologies. The observation of a very long needle-like nanowire reveals the stack nature of the growth. These nanoarchitectures are rarely observed experimentally. Raman scattering confirms phonon confinement in the nanostructures. Photoluminescence measurements indicate a route for engineering defects on the surface of ZnO microtubes after the complete coalescence of the nanostructures through heat treatment. This experiment would be useful for improving nanostructure organization which could provide an impact in the manufacturability of nanostructure-based systems.

Veritable electronic characteristics in ZnO nanowire circuits uncovered by the four-terminal method at a low temperature

NASA Astrophysics Data System (ADS)

Li, Xin; Zhang, Qi

2017-04-01

Understanding the natural electrical properties in semiconductor channels and the carrier transport across the metal-semiconductor contact is essential to improve the performance of nanowire devices. This work presents the true electronic characteristics of ZnO nanowire devices measured by a four-electrode method at a low-temperature environment. The temperature rise leads to the decrease in near-band-gap emission, which is attributed to two non-radiative recombination processes. For ZnO circuits, thermionic emission carrier transport mechanism plays a dominant role at Ti-Au/ZnO interface and the transport mechanism in ZnO nanowires is governed by two competitive thermal activation conduction processes: optical or acoustic phonons assisting hopping.

A ZnO nanowire bio-hybrid solar cell

NASA Astrophysics Data System (ADS)

Yaghoubi, Houman; Schaefer, Michael; Yaghoubi, Shayan; Jun, Daniel; Schlaf, Rudy; Beatty, J. Thomas; Takshi, Arash

2017-02-01

Harvesting solar energy as a carbon free source can be a promising solution to the energy crisis and environmental pollution. Biophotovoltaics seek to mimic photosynthesis to harvest solar energy and to take advantage of the low material costs, negative carbon footprint, and material abundance. In the current study, we report on a combination of zinc oxide (ZnO) nanowires with monolayers of photosynthetic reaction centers which are self-assembled, via a cytochrome c linker, as photoactive electrode. In a three-probe biophotovoltaics cell, a photocurrent density of 5.5 μA cm-2 and photovoltage of 36 mV was achieved, using methyl viologen as a redox mediator in the electrolyte. Using ferrocene as a redox mediator a transient photocurrent density of 8.0 μA cm-2 was obtained, which stabilized at 6.4 μA cm-2 after 20 s. In-depth electronic structure characterization using photoemission spectroscopy in conjunction with electrochemical analysis suggests that the fabricated photoactive electrode can provide a proper electronic path for electron transport all the way from the conduction band of the ZnO nanowires, through the protein linker to the RC, and ultimately via redox mediator to the counter electrode.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition.

PubMed

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D; Renevier, Hubert; Consonni, Vincent

2017-03-03

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 10 7 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

NASA Astrophysics Data System (ADS)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

2017-03-01

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscaleengineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol–gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on themore » macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscaleengineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.« less

Earth-Abundant Oxygen Evolution Catalysts Coupled onto ZnO Nanowire Arrays for Efficient Photoelectrochemical Water Cleavage

PubMed Central

Jiang, Chaoran; Moniz, Savio J A; Khraisheh, Majeda; Tang, Junwang

2014-01-01

ZnO has long been considered as a model UV-driven photoanode for photoelectrochemical water splitting, but its performance has been limited by fast charge-carrier recombination, extremely poor stability in aqueous solution, and slow kinetics of water oxidation. These issues were addressed by applying a strategy of optimization and passivation of hydrothermally grown 1D ZnO nanowire arrays. The length and diameter of bare ZnO nanowires were optimized by varying the growth time and precursor concentration to achieve optimal photoelectrochemical performance. The addition of earth-abundant cobalt phosphate (Co-Pi) and nickel borate (Ni-B) oxygen evolution catalysts onto ZnO nanowires resulted in substantial cathodic shifts in onset potential to as low as about 0.3 V versus the reversible hydrogen electrode (RHE) for Ni-B/ZnO, for which a maximum photocurrent density of 1.1 mA cm−2 at 0.9 V (vs. RHE) with applied bias photon-to-current efficiency of 0.4 % and an unprecedented near-unity incident photon-to-current efficiency at 370 nm. In addition the potential required for saturated photocurrent was dramatically reduced from 1.6 to 0.9 V versus RHE. Furthermore, the stability of these ZnO nanowires was significantly enhanced by using Ni-B compared to Co-Pi due to its superior chemical robustness, and it thus has additional functionality as a stable protecting layer on the ZnO surface. These remarkable enhancements in both photocatalytic activity and stability directly address the current severe limitations in the use of ZnO-based photoelectrodes for water-splitting applications, and can be applied to other photoanodes for efficient solar-driven fuel synthesis. PMID:25156820

Synthesis, structural and optical properties of silver nanoparticles uniformly decorated ZnO nanowires

NASA Astrophysics Data System (ADS)

Zhang, Ke-Xin; Wen, Xing; Yao, Cheng-Bao; Li, Jin; Zhang, Meng; Li, Qiang-Hua; Sun, Wen-Jun; Wu, Jia-Da

2018-04-01

Silver (Ag) nanoparticles decorated Zinc oxide (A-ZnO) nanowires have been successfully synthesized by two-step chemical vapour deposition and magnetron sputtering method. The X-ray diffraction patterns revealed their hexagonal wurtzite structure. SEM images indicated the Ag nanoparticles are distributed uniformly on the surface of A-ZnO nanowires. By extending the sputtering time, the atomic percent of Ag increased gradually. Moreover, the photoluminescence results demonstrated two major emission peaks for the A-ZnO nanowires. Where, the visible emission peaks were stronger than those of unmodified ZnO nanowires. These studies promise their potential applications in multifunctional optical devices.

Growth Evolution and Characterization of PLD Zn(Mg)O Nanowire Arrays

NASA Astrophysics Data System (ADS)

Rahm, Andreas; Nobis, Thomas; Lorenz, Michael; Zimmermann, Gregor; Boukos, Nikos; Travlos, Anastasios; Grundmann, Marius

ZnO and Zn0.98Mg0.02O nanowires have been grown by high-pressure pulsed laser deposition on sapphire substrates covered with gold colloidal particles as nucleation sites. We present a detailed study of the nanowire size and length distribution and of the growth evolution. We find that the aspect ratio varies linearly with deposition time. The linearity coefficient is independent of the catalytic gold particle size and lateral nanowire density. The superior structural quality of the whiskers is proven by X-ray diffraction and transmission electron microscopy. The defect-free ZnO nanowires exhibit a FWHM(2θ-ω) of the ZnO(0002) reflection of 22 arcsec. We show (0-11) step habit planes on the side faces of the nanowires that are a few atomic steps in height. The microscopic homogeneity of the optical properties is confirmed by temperature-dependent cathodoluminescence.

ZnO nanowires for tunable near-UV/blue LED

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno

2012-02-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. Markedly improved performances are expected from nanostructured active layers for light emission. Nanowires can act as direct waveguides and favor light extraction without the use of lenses and reflectors. Moreover, the use of wires avoids the presence of grain boundaries and then the emission efficiency should be boosted by the absence of non-radiative recombinations at the joint defects. Electrochemical deposition technique was used for the preparation of ZnO-NWs based light emitters. Nanowires of high structural and optical quality have been epitaxially grown on p-GaN single crystalline films substrates. We have shown that the emission is directional with a wavelength that was tuned and red-shifted toward the visible region by doping with Cu in ZnO NWs.

Size-dependent Young’s modulus in ZnO nanowires with strong surface atomic bonds

NASA Astrophysics Data System (ADS)

Fan, Shiwen; Bi, Sheng; Li, Qikun; Guo, Qinglei; Liu, Junshan; Ouyang, Zhongliang; Jiang, Chengming; Song, Jinhui

2018-03-01

The mechanical properties of size-dependent nanowires are important in nano-electro-mechanical systems (NEMSs), and have attracted much research interest. Characterization of the size effect of nanowires in atmosphere directly to broaden their practical application instead of just in high vacuum situations, as reported previously, is desperately needed. In this study, we systematically studied the Young’s modulus of vertical ZnO nanowires in atmosphere. The diameters ranged from 48 nm to 239 nm with a resonance method using non-contact atomic force microscopy. The values of Young’s modulus in atmosphere present extremely strong increasing tendency with decreasing diameter of nanowire due to stronger surface atomic bonds compared with that in vacuum. A core-shell model for nanowires is proposed to explore the Young’s modulus enhancement in atmosphere, which is correlated with atoms of oxygen occurring near the nanowire surface. The modified model is more accurate for analyzing the mechanical behavior of nanowires in atmosphere compared with the model in vacuum. Furthermore, it is possible to use this characterization method to measure the size-related elastic properties of similar wire-sharp nanomaterials in atmosphere and estimate the corresponding mechanical behavior. The study of the size-dependent Young’s modulus in ZnO nanowires in atmosphere will improve the understanding of the mechanical properties of nanomaterials as well as providing guidance for applications in NEMSs, nanogenerators, biosensors and other related areas.

On the difficulties in characterizing ZnO nanowires.

PubMed

Schlenker, E; Bakin, A; Weimann, T; Hinze, P; Weber, D H; Gölzhäuser, A; Wehmann, H-H; Waag, A

2008-09-10

The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10(-3)-10(5) Ωcm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.

Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

PubMed Central

Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

2016-01-01

In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

PubMed

Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

2016-03-24

In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires.

PubMed

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-16

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g -1 at a scan rate of 20 mV s -1 , which is almost twice that of ZnO NWs (191.5 F g -1 ). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g -1 at a current density of 1.33 A g -1 with an energy density of 25.2 W h kg -1 at the power density of 896.44 W kg -1 . In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

NASA Astrophysics Data System (ADS)

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-01

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Synthesis of high aspect ratio ZnO nanowires with an inexpensive handcrafted electrochemical setup

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taheri, Ali, E-mail: at1361@aut.ac.ir, E-mail: atahery@aeoi.org.ir; Saramad, Shahyar; Setayeshi, Saeed

In this work, high aspect ratio zinc oxide nanowires are synthesized using templated one-step electrodeposition technique. Electrodeposition of the nanowires is done using a handcrafted electronic system. Nuclear track-etched polycarbonate membrane is used as a template to form the high aspect ratio nanowires. The result of X-ray diffraction and scanning electron microscopy shows that nanowires with a good crystallinity and an aspect ratio of more than 30 can be achieved in a suitable condition. The height of electrodeposited nanowires reaches to about 11 μm. Based on the obtained results, high aspect ratio ZnO nanowires can be formed using inexpensive electrodepositionmore » setup with an acceptable quality.« less

Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays.

PubMed

Soman, Pranav; Darnell, Max; Feldman, Marc D; Chen, Shaochen

2011-08-01

A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires

PubMed Central

2011-01-01

1, 3, and 5 wt.% silver-doped ZnO (SZO) nanowires (NWs) are grown by hot-walled pulsed laser deposition. After silver-doping process, SZO NWs show some change behaviors, including structural, electrical, and optical properties. In case of structural property, the primary growth plane of SZO NWs is switched from (002) to (103) plane, and the electrical properties of SZO NWs are variously measured to be about 4.26 × 106, 1.34 × 106, and 3.04 × 105 Ω for 1, 3, and 5 SZO NWs, respectively. In other words, the electrical properties of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration. Finally, the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor (A0X). Also, Ag presence in ZnO NWs is directly detected by both X-ray photoelectron spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping facilitates the possibility of changing the properties in ZnO NWs by the atomic substitution of Ag with Zn in the lattice. PMID:21985620

Fabrication of a Combustion-Reacted High-Performance ZnO Electron Transport Layer with Silver Nanowire Electrodes for Organic Solar Cells.

PubMed

Park, Minkyu; Lee, Sang-Hoon; Kim, Donghyuk; Kang, Juhoon; Lee, Jung-Yong; Han, Seung Min

2018-02-28

Herein, a new methodology for solution-processed ZnO fabrication on Ag nanowire network electrode via combustion reaction is reported, where the amount of heat emitted during combustion was minimized by controlling the reaction temperature to avoid damaging the underlying Ag nanowires. The degree of participation of acetylacetones, which are volatile fuels in the combustion reaction, was found to vary with the reaction temperature, as revealed by thermogravimetric and compositional analyses. An optimized processing temperature of 180 °C was chosen to successfully fabricate a combustion-reacted ZnO and Ag nanowire hybrid electrode with a sheet resistance of 30 Ω/sq and transmittance of 87%. A combustion-reacted ZnO on Ag nanowire hybrid structure was demonstrated as an efficient transparent electrode and electron transport layer for the PTB7-Th-based polymer solar cells. The superior electrical conductivity of combustion-reacted ZnO, compared to that of conventional sol-gel ZnO, increased the external quantum efficiency over the entire absorption range, whereas a unique light scattering effect due to the presence of nanopores in the combustion-derived ZnO further enhanced the external quantum efficiency in the 450-550 nm wavelength range. A power conversion efficiency of 8.48% was demonstrated for the PTB7-Th-based polymer solar cell with the use of a combustion-reacted ZnO/Ag NW hybrid transparent electrode.

Functionalised zinc oxide nanowire gas sensors: Enhanced NO(2) gas sensor response by chemical modification of nanowire surfaces.

PubMed

Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio

2012-01-01

Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.

Cleaved-coupled nanowire lasers

PubMed Central

Gao, Hanwei; Fu, Anthony; Andrews, Sean C.; Yang, Peidong

2013-01-01

The miniaturization of optoelectronic devices is essential for the continued success of photonic technologies. Nanowires have been identified as potential building blocks that mimic conventional photonic components such as interconnects, waveguides, and optical cavities at the nanoscale. Semiconductor nanowires with high optical gain offer promising solutions for lasers with small footprints and low power consumption. Although much effort has been directed toward controlling their size, shape, and composition, most nanowire lasers currently suffer from emitting at multiple frequencies simultaneously, arising from the longitudinal modes native to simple Fabry–Pérot cavities. Cleaved-coupled cavities, two Fabry–Pérot cavities that are axially coupled through an air gap, are a promising architecture to produce single-frequency emission. The miniaturization of this concept, however, imposes a restriction on the dimensions of the intercavity gaps because severe optical losses are incurred when the cross-sectional dimensions of cavities become comparable to the lasing wavelength. Here we theoretically investigate and experimentally demonstrate spectral manipulation of lasing modes by creating cleaved-coupled cavities in gallium nitride (GaN) nanowires. Lasing operation at a single UV wavelength at room temperature was achieved using nanoscale gaps to create the smallest cleaved-coupled cavities to date. Besides the reduced number of lasing modes, the cleaved-coupled nanowires also operate with a lower threshold gain than that of the individual component nanowires. Good agreement was found between the measured lasing spectra and the predicted spectral modes obtained by simulating optical coupling properties. This agreement between theory and experiment presents design principles to rationally control the lasing modes in cleaved-coupled nanowire lasers. PMID:23284173

Harvesting Mechanical and Thermal Energy by Combining ZnO Nanowires and NiTi Shape Memory Alloy

DOE PAGES

Radousky, Harry; Qian, Fang; An, Yonghao; ...

2017-02-19

In the expanding world of small scale energy harvesting, the ability to combine thermal and mechanical harvesting is growing ever more important. Here, we demonstrate the feasibility of using ZnO nanowires to harvest both mechanical and low-quality thermal energy in simple, scalable devices. These devices were fabricated on kapton films and used ZnO nanowires with the same growth direction to assure alignment of the piezoelectric potentials of all of the wires. Mechanical harvesting from these devices was demonstrated using a periodic application of force, modeling the motion of the human body. Tapping the device from the top of the devicemore » with a wood stick, for example yielded an Open Circuit Voltage (OCV) of 0.2 - 4 V, which is in an ideal range for device applications. In order to demonstrate thermal harvesting from low quality heat sources, a commercially available Nitinol (Ni-Ti alloy) foil was attached to the nanowire piezoelectric device to create a compound thermoelectric. When bent at room temperature and then heated to 50°C, the Nitinol foil was restored to its original flat shape, which yielded an output voltage of nearly 1 V from the ZnO nanowire device.« less

Harvesting Mechanical and Thermal Energy by Combining ZnO Nanowires and NiTi Shape Memory Alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radousky, Harry; Qian, Fang; An, Yonghao

In the expanding world of small scale energy harvesting, the ability to combine thermal and mechanical harvesting is growing ever more important. Here, we demonstrate the feasibility of using ZnO nanowires to harvest both mechanical and low-quality thermal energy in simple, scalable devices. These devices were fabricated on kapton films and used ZnO nanowires with the same growth direction to assure alignment of the piezoelectric potentials of all of the wires. Mechanical harvesting from these devices was demonstrated using a periodic application of force, modeling the motion of the human body. Tapping the device from the top of the devicemore » with a wood stick, for example yielded an Open Circuit Voltage (OCV) of 0.2 - 4 V, which is in an ideal range for device applications. In order to demonstrate thermal harvesting from low quality heat sources, a commercially available Nitinol (Ni-Ti alloy) foil was attached to the nanowire piezoelectric device to create a compound thermoelectric. When bent at room temperature and then heated to 50°C, the Nitinol foil was restored to its original flat shape, which yielded an output voltage of nearly 1 V from the ZnO nanowire device.« less

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Impedance analysis of PbS colloidal quantum dot solar cells with different ZnO nanowire lengths

NASA Astrophysics Data System (ADS)

Fukuda, Takeshi; Takahashi, Akihiro; Wang, Haibin; Takahira, Kazuya; Kubo, Takaya; Segawa, Hiroshi

2018-03-01

The photoconversion efficiency of colloidal quantum dot (QD) solar cells has been markedly improved by optimizing the surface passivation and device structure, and details of device physics are now under investigation. In this study, we investigated the resistance and capacitance components at the ZnO/PbS-QD interface and inside a PbS-QD layer by measuring the impedance spectrum while the interface area was controlled by changing the ZnO nanowire length. By evaluating the dependence of optical intensity and DC bias voltage on the ZnO nanowire length, only the capacitance was observed to be influenced by the interface area, and this indicates that photoinduced carriers are generated at the surface of PbS-QD. In addition, since the capacitance is proportional to the surface area of the QD, the interface area can be evaluated from the capacitance. Finally, photovoltaic performance was observed to increase with increasing ZnO nanowire length owing to the large interface area, and this result is in good agreement with the capacitance measurement.

Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

NASA Astrophysics Data System (ADS)

Sun, Xu; Gu, Yousong; Wang, Xueqiang

2012-08-01

One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

Growth of ZnO nanowires on polypropylene membrane surface-Characterization and reactivity

NASA Astrophysics Data System (ADS)

Bojarska, Marta; Nowak, Bartosz; Skowroński, Jarosław; Piątkiewicz, Wojciech; Gradoń, Leon

2017-01-01

Need for a new membrane is clearly visible in recent studies, mostly due to the fouling phenomenon. Authors, focused on problem of biofouling caused by microorganisms that are present in water environment. An attempt to form a new membrane with zinc oxide (ZnO) nanowires was made; where plasma treatment was used as a first step of modification followed by chemical bath deposition. Such membrane will exhibit additional reactive properties. ZnO, because of its antibacterial and photocatalytic properties, is more and more often used in commercial applications. The authors used SEM imaging, measurement of the contact angle, XRD and the FT-IR analysis for membrane characterization. Amount of ZnO deposited on membrane surface was also investigated by dithizone method. Photocatalytic properties of such membranes were examined through methylene blue and humic acid degradation in laboratory scale modules with LEDs as either: wide range white or UV light source. Antibacterial and antifouling properties of polypropylene membranes modified with ZnO nanowires were examined through a series of tests involving microorganisms: model gram-positive and -negative bacteria. The obtained results showed that it is possible to modify the membrane surface in such a way, that additional reactive properties will be given. Thus, not only did the membrane become a physical barrier, but also turned out to be a reactive one.

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.

PubMed

Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh; Cheng, Yun-Wei; Chen, Liang-Yi; Lin, Guan-Jhong; Lu, Yu-Hsin; He, Jr-Hau; Kuo, Hao-Chung; Huang, JianJang

2010-12-15

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Electrically Injected UV-Visible Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, George T.; Li, Changyi; Li, Qiming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasersmore » emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.« less

Structural, optical and electrical properties of well-ordered ZnO nanowires grown on (1 1 1) oriented Si, GaAs and InP substrates by electrochemical deposition method

NASA Astrophysics Data System (ADS)

Pham, Huyen T.; Nguyen, Tam D.; Tran, Dat Q.; Akabori, Masashi

2017-05-01

ZnO semiconductors, especially in form of nanomaterials, possess many excellent properties and have been employed in many applications. In this article, we reported the selective area growth of ZnO nanowires on different (1 1 1) oriented Si, GaAs, and first time on InP substrates by electrochemical deposition method without any seed layers, using zinc nitrate hexahydrate precursor in the presence of hexamethylenetetramine. The position, density and orientation of such ZnO nanowires were controlled by the substrate patterning technique using electron-beam lithography. As-synthesized ZnO nanowires grown on patterned substrates show smaller diameter, higher density and better orientation, compared to the one grown on unpatterned substrates. In particular, the ZnO nanowires grown on GaAs patterned substrate indicate the best morphological property, with the average diameter, length and density of about 100 nm, 2.4 µm and 35 µm-2, respectively. The x-ray diffraction and Raman scattering also demonstrate high crystalline quality of our ZnO nanowires. Moreover, as-reported ZnO nanowires are also conductive, which would allow their use in field-effect transistor and other potential nanoscale device applications.

A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.

PubMed

Raza, Syed Raza Ali; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

2013-11-21

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.

A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

PubMed

Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

2014-02-07

High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

PubMed

Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

2016-12-01

Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

PubMed

Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

2017-04-25

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn 2 SnO 4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10 4 ), specific detectivity (up to 9.0 × 10 17 Jones), photoconductive gain (up to 1.1 × 10 7 ), fast response, and excellent stability. Compared with a pristine Zn 2 SnO 4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn 2 SnO 4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn 2 SnO 4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

The kinetic friction of ZnO nanowires on amorphous SiO2 and SiN substrates

NASA Astrophysics Data System (ADS)

Roy, Aditi; Xie, Hongtao; Wang, Shiliang; Huang, Han

2016-12-01

ZnO nanowires were bent on amorphous SiO2 and SiN substrates in an ambient atmosphere using optical nanomanipulation. The kinetic friction between the nanowires and substrate was determined from the bent shape of the nanowires. The kinetic friction force per unit area, i.e. frictional shear stress, for the ZnO/SiO2 and ZnO/SiN nanowire/substrate systems being measured were 1.05 ± 0.28 and 2.08 ± 0.33 MPa, respectively. The surface roughness and the Hamaker constant of SiO2 and SiN substrates had significant effect on the frictional stresses.

Adsorbed Molecules and Surface Treatment Effect on Optical Properties of ZnO Nanowires Grown by MOCVD

NASA Astrophysics Data System (ADS)

Jabri, S.; Souissi, H.; Sallet, V.; Lusson, A.; Meftah, A.; Galtier, P.; Oueslati, M.

2017-07-01

We have investigated the optical properties of ZnO nanowires grown by metalorganic chemical vapor deposition (MOCVD) with nitrous oxide (N2O) as oxygen precursor. Photoluminescence (PL) and Raman measurements showed the influence of adsorbed molecules on the optical properties. Low-temperature (4 K) PL studies on the surface exciton (SX) at 3.3660 eV elucidated the nature and origin of this emission. In particular, surface treatment by annealing at high temperature under inert gas reduced the emission intensity of SX. Raman vibrational spectra proved that presence of a considerable amount of adsorbed molecules on the surface of ZnO nanowires plays a key role in the occurrence of surface excitons.

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

NASA Astrophysics Data System (ADS)

Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

2017-07-01

Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Penetration length-dependent hot electrons in the field emission from ZnO nanowires

NASA Astrophysics Data System (ADS)

Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-01-01

In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays

NASA Astrophysics Data System (ADS)

Wang, Zhiqiang; Guo, Xiaoxuan; Sham, Tsun-Kong

2014-05-01

Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed.Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed. Electronic supplementary information (ESI) available: XEOL spectra with different excitation energies. X-ray attenuation length vs. photon energy. Details of surface defects in ZnO NWs. The second O K-edge and Zn L-edge 2D XANES-XEOL maps. Comparison of the first and second TEY at O K-edge and Zn L-edge scans, respectively. Raman spectra of the ZnO NWs with different IBGE/IDE ratios. See DOI: 10.1039/c4nr01049c

Investigation of the temperature dependent field emission from individual ZnO nanowires for evidence of field-induced hot electrons emission.

PubMed

Chen, Yicong; Zhang, Zhipeng; Li, Zhi-Bing; She, Juncong; Deng, Shaozhi; Xu, Ning-Sheng; Chen, Jun

2018-06-27

ZnO nanowires as field emitters have important applications in flat panel display and X-ray source. Understanding the intrinsic field emission mechanism is crucial for further improving the performance of ZnO nanowire field emitters. In this article, the temperature dependent field emission from individual ZnO nanowires was investigated by an in-situ measurement in ultra-high vacuum. The divergent temperature-dependent Fowler-Nordheim plots is found in the low field region. A field-induced hot electrons emission model that takes into account penetration length is proposed to explain the results. The carrier density and temperature dependence of the field-induced hot electrons emission current are derived theoretically. The obtained results are consistent with the experimental results, which could be attributed to the variation of effective electron temperature. All of these are important for a better understanding on the field emission process of semiconductor nanostructures. © 2018 IOP Publishing Ltd.

In Situ X-ray Absorption Near-Edge Structure Spectroscopy of ZnO Nanowire Growth During Chemical Bath Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

McPeak, Kevin M.; Becker, Matthew A.; Britton, Nathan G.

2010-12-03

Chemical bath deposition (CBD) offers a simple and inexpensive route to deposit semiconductor nanostructures, but lack of fundamental understanding and control of the underlying chemistry has limited its versatility. Here we report the first use of in situ X-ray absorption spectroscopy during CBD, enabling detailed investigation of both reaction mechanisms and kinetics of ZnO nanowire growth from zinc nitrate and hexamethylenetetramine (HMTA) precursors. Time-resolved X-ray absorption near-edge structure (XANES) spectra were used to quantify Zn(II) speciation in both solution and solid phases. ZnO crystallizes directly from [Zn(H{sub 2}O){sub 6}]{sup 2+} without long-lived intermediates. Using ZnO nanowire deposition as an example,more » this study establishes in situ XANES spectroscopy as an excellent quantitative tool to understand CBD of nanomaterials.« less

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

NASA Astrophysics Data System (ADS)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

High carrier concentration ZnO nanowire arrays for binder-free conductive support of supercapacitors electrodes by Al doping.

PubMed

Zheng, Xin; Sun, Yihui; Yan, Xiaoqin; Sun, Xu; Zhang, Guangjie; Zhang, Qian; Jiang, Yaru; Gao, Wenchao; Zhang, Yue

2016-12-15

Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. Here, we prepared in situ Al-doped ZnO nanowire arrays by using continuous flow injection (CFI) hydrothermal method to promote the conductivity. This reasonable method offers highly stable precursor concentration for doping that effectively avoid the appearance of the low conductivity ZnO nanosheets. Benefit from this, three orders of magnitude rise of the carrier concentration from 10 16 cm -3 to 10 19 cm -3 can be achieved compared with the common hydrothermal (CH) mothed in Mott-Schottky measurement. Possible effect of Al-doping was discussed by first-principle theory. On this basis, Al-doped ZnO nanowire arrays was developed as a binder-free conductive support for supercapacitor electrodes and high capacitance was triggered. It is owing to the dramatically decreased transfer resistance induced by the growing free-moving electrons and holes. Our results have a profound significance not merely in the controlled synthesis of other doping nanomaterials by co-precipitation method but also in the application of binder-free energy materials or other materials. Copyright © 2016 Elsevier Inc. All rights reserved.

Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

NASA Astrophysics Data System (ADS)

Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

2016-10-01

One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on.

Effects of annealing on the ferromagnetism and photoluminescence of Cu-doped ZnO nanowires.

PubMed

Xu, H J; Zhu, H C; Shan, X D; Liu, Y X; Gao, J Y; Zhang, X Z; Zhang, J M; Wang, P W; Hou, Y M; Yu, D P

2010-01-13

Room temperature ferromagnetic Cu-doped ZnO nanowires have been synthesized using the chemical vapor deposition method. By combining structural characterizations and comparative annealing experiments, it has been found that both extrinsic (CuO nanoparticles) and intrinsic (Zn(1-x)Cu(x)O nanowires) sources are responsible for the observed ferromagnetic ordering of the as-grown samples. As regards the former, annealing in Zn vapor led to a dramatic decrease of the ferromagnetism. For the latter, a reversible switching of the ferromagnetism was observed with sequential annealings in Zn vapor and oxygen ambience respectively, which agreed well with previous reports for Cu-doped ZnO films. In addition, we have for the first time observed low temperature photoluminescence changed with magnetic properties upon annealing in different conditions, which revealed the crucial role played by interstitial zinc in directly mediating high T(c) ferromagnetism and indirectly modulating the Cu-related structured green emission via different charge transfer transitions.

Sub-diffraction Laser Synthesis of Silicon Nanowires

PubMed Central

Mitchell, James I.; Zhou, Nan; Nam, Woongsik; Traverso, Luis M.; Xu, Xianfan

2014-01-01

We demonstrate synthesis of silicon nanowires of tens of nanometers via laser induced chemical vapor deposition. These nanowires with diameters as small as 60 nm are produced by the interference between incident laser radiation and surface scattered radiation within a diffraction limited spot, which causes spatially confined, periodic heating needed for high resolution chemical vapor deposition. By controlling the intensity and polarization direction of the incident radiation, multiple parallel nanowires can be simultaneously synthesized. The nanowires are produced on a dielectric substrate with controlled diameter, length, orientation, and the possibility of in-situ doping, and therefore are ready for device fabrication. Our method offers rapid one-step fabrication of nano-materials and devices unobtainable with previous CVD methods. PMID:24469704

Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests

PubMed Central

Kim, Hyun Chan; Song, Sangho; Kim, Jaehwan

2016-01-01

This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO) nanowire (NW) grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm2, thus fitting the 1.8 × 1.8 mm2 haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices. PMID:27649184

Flexible Dye-Sensitized Solar Cell Based on Vertical ZnO Nanowire Arrays

PubMed Central

2011-01-01

Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices. PMID:27502660

A fast and effective approach for reversible wetting-dewetting transitions on ZnO nanowires

PubMed Central

Yadav, Kavita; Mehta, B. R.; Bhattacharya, Saswata; Singh, J. P.

2016-01-01

Here, we demonstrate a facile approach for the preparation of ZnO nanowires (NWs) with tunable surface wettability that can be manipulated reversibly in a controlled manner from a superhydrophilic state to a superhydrophobic state. The as-synthesized ZnO NWs obtained by a chemical vapor deposition method are superhydrophilic with a contact angle (CA) value of ~0°. After H2 gas annealing at 300 °C for 90 minutes, ZnO NWs display superhydrophobic behavior with a roll-off angle less than 5°. However, O2 gas annealing converts these superhydrophobic ZnO NWs into a superhydrophilic state. For switching from superhydrophobic to superhydrophilic state and vice versa in cyclic manner, H2 and O2 gas annealing treatment was used, respectively. A model based on density functional theory indicates that the oxygen-related defects are responsible for CA switching. The water resistant properties of the ZnO NWs coating is found to be durable and can be applied to a variety of substrates including glass, metals, semiconductors, paper and even flexible polymers. PMID:27713536

Zinc oxide nanowire networks for macroelectronic devices

NASA Astrophysics Data System (ADS)

Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

2009-04-01

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

PubMed Central

2012-01-01

The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

ZnO synthesized in air by fs laser irradiation on metallic Zn thin films

NASA Astrophysics Data System (ADS)

Esqueda-Barrón, Y.; Herrera, M.; Camacho-López, S.

2018-05-01

We present results on rapid femtosecond laser synthesis of nanostructured ZnO. We used metallic Zn thin films to laser scan along straight tracks, until forming nanostructured ZnO. The synthesis dependence on laser irradiation parameters such as the per pulse fluence, integrated fluence, laser scan speed, and number of scans were explored carefully. SEM characterization showed that the morphology of the obtained ZnO is dictated by the integrated fluence and the laser scan speed; micro Raman and XRD results allowed to identify optimal laser processing conditions for getting good quality ZnO; and cathodoluminescence measurements demonstrated that a single laser scan at high per pulse laser fluence, but a medium integrated laser fluence and a medium laser scan speed favors a low density of point-defects in the lattice. Electrical measurements showed a correlation between resistivity of the laser produced ZnO and point-defects created during the synthesis. Transmittance measurements showed that, the synthesized ZnO can reach down to the supporting fused silica substrate under the right laser irradiation conditions. The physical mechanism for the formation of ZnO, under ultrashort pulse laser irradiation, is discussed in view of the distinct times scales given by the laser pulse duration and the laser pulse repetition rate.

Synthesis of high crystallinity ZnO nanowire array on polymer substrate and flexible fiber-based sensor.

PubMed

Liu, Jinmei; Wu, Weiwei; Bai, Suo; Qin, Yong

2011-11-01

Well aligned ZnO nanowire (NW) arrays are grown on Kevlar fiber and Kapton film via the chemical vapor deposition (CVD) method. These NWs have better crystallinity than those synthesized through the low-temperature hydrothermal method. The average length and diameter of ZnO NWs grown on Kevlar fiber can be controlled from 0.5 to 2.76 μm and 30 to 300 nm, respectively. A flexible ultraviolet (UV) sensor based on Kevlar fiber/ZnO NWs hybrid structure is made to detect UV illumination quantificationally.

ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed

NASA Astrophysics Data System (ADS)

Cheng, Gang; Wu, Xinghui; Liu, Bing; Li, Bing; Zhang, Xingtang; Du, Zuliang

2011-11-01

ZnO nanowire (NW) ultraviolet (UV) photodetectors have high sensitivity, while the long recovery time is an important limitation for its applications. In this paper, we demonstrate the promising applications of ZnO NW Schottky barrier as high performance UV photodetector with high sensitivity and fast recovery speed. The on/off ratio, sensitivity, and photocurrent gain are 4 × 105, 2.6 × 103 A/W, and 8.5 × 103, respectively. The recovery time is 0.28 s when photocurrent decreases by 3 orders of magnitude, and the corresponding time constant is as short as 46 ms. The physical mechanisms of the fast recovery properties have also been discussed.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

PubMed

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Structural and optical characterization of ZnO nanowires grown on alumina by thermal evaporation method.

PubMed

Mute, A; Peres, M; Peiris, T C; Lourenço, A C; Jensen, Lars R; Monteiro, T

2010-04-01

Zinc oxide nanowires have been grown on alumina substrate by thermal evaporation of zinc nanopowder in the presence of oxygen flow. The growth was performed under ambient pressure and without the use of foreign catalyst. Scanning electron microscopy (SEM) observation showed that the as-grown sample consists of bulk ZnO crystal on the substrate surface with nanowires growing from this base. Growth mechanism of the observed morphology is suggested to be governed by the change of zinc vapour supersaturation during the growth process. X-ray diffraction (XRD) measurement was used to identify the crystalline phase of the nanowires. Optical properties of the nanowires were investigated using Raman scattering and photoluminescence (PL). The appearance of dominant, Raman active E2 (high) phonon mode in the Raman spectrum has confirmed the wurtzite hexagonal phase of the nanowires. With above bandgap excitation the low temperature PL recombination is dominated by donor bound exciton luminescence at -3.37 eV with a narrow full width at half maximum. Free exciton emission is also seen at low temperature and can be observed up to room temperature. The optical data indicates that the grown nanowires have high optical quality.

Low-Temperature Preparation of Ag-Doped ZnO Nanowire Arrays, DFT Study, and Application to Light-Emitting Diode.

PubMed

Pauporté, Thierry; Lupan, Oleg; Zhang, Jie; Tugsuz, Tugba; Ciofini, Ilaria; Labat, Frédéric; Viana, Bruno

2015-06-10

Doping ZnO nanowires (NWs) by group IB elements is an important challenge for integrating nanostructures into functional devices with better and tuned performances. The growth of Ag-doped ZnO NWs by electrodeposition at 90 °C using a chloride bath and molecular oxygen precursor is reported. Ag acts as an electrocatalyst for the deposition and influences the nucleation and growth of the structures. The silver atomic concentration in the wires is controlled by the additive concentration in the deposition bath and a content up to 3.7 atomic % is reported. XRD analysis shows that the integration of silver enlarges the lattice parameters of ZnO. The optical measurements also show that the direct optical bandgap of ZnO is reduced by silver doping. The bandgap shift and lattice expansion are explained by first principle calculations using the density functional theory (DFT) on the silver impurity integration as an interstitial (Ag(i)) and as a substitute of zinc atom (Ag(Zn)) in the crystal lattice. They notably indicate that Ag(Zn) doping forms an impurity band because of Ag 4d and O 2p orbital interactions, shifting the Fermi level toward the valence band. At least, Ag-doped ZnO vertically aligned nanowire arrays have been epitaxially grown on GaN(001) substrate. The heterostructure has been inserted in a light emitting device. UV-blue light emission has been achieved with a low emission threshold of 5 V and a tunable red-shifted emission spectrum related to the bandgap reduction induced by silver doping of the ZnO emitter material.

Diameter and location control of ZnO nanowires using electrodeposition and sodium citrate

NASA Astrophysics Data System (ADS)

Lifson, Max L.; Levey, Christopher G.; Gibson, Ursula J.

2013-10-01

We report single-step growth of spatially localized ZnO nanowires of controlled diameter to enable improved performance of piezoelectric devices such as nanogenerators. This study is the first to demonstrate the combination of electrodeposition with zinc nitrate and sodium citrate in the growth solution. Electrodeposition through a thermally-grown silicon oxide mask results in localization, while the growth voltage and solution chemistry are tuned to control the nanowire geometry. We observe a competition between lateral (relative to the (0001) axis) citrate-related morphology and voltage-driven vertical growth which enables this control. High aspect ratios result with either pure nitrate or nitrate-citrate mixtures if large voltages are used, but low growth voltages permit the growth of large diameter nanowires in solution with citrate. Measurements of the current density suggest a two-step growth process. An oxide mask blocks the electrodeposition, and suppresses nucleation of thermally driven growth, permitting single-step lithography on low cost p-type silicon substrates.

Investigation of nanoscale voids in Sb-doped p-type ZnO nanowires.

PubMed

Pradel, Ken C; Uzuhashi, Jun; Takei, Toshiaki; Ohkubo, Tadakatsu; Hono, Kazuhiro; Fukata, Naoki

2018-08-17

While it has multiple advantageous optoelectronic and piezoelectric properties, the application of zinc oxide has been limited by the lack of a stable p-type dopant. Recently, it was discovered that antimony doping can lead to stable p-type doping in ZnO, but one curious side effect of the doping process is the formation of voids inside the nanowire. While previously used as a signifier of successful doping, up until now, little research has been performed on these structures themselves. In this work, the effect of annealing on the size and microstructure of the voids was investigated using TEM and XRD, finding that the voids form around a region of Zn 7 Sb 2 O 12 . Furthermore, using Raman spectroscopy, a new peak associated with successful doping was identified. The most surprising finding, however, was the presence of water trapped inside the nanowire, showing that this is actually a composite structure. Water was initially discovered in the nanowires using atom probe tomography, and verified using Raman spectroscopy.

Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors.

PubMed

Chen, Qi; Ding, Huaiyi; Wu, Yukun; Sui, Mengqiao; Lu, Wei; Wang, Bing; Su, Wenming; Cui, Zheng; Chen, Liwei

2013-05-21

The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures.

A Nanowire-Based Plasmonic Quantum Dot Laser.

PubMed

Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2016-04-13

Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

NASA Astrophysics Data System (ADS)

Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

Effect of in situ Al doping on structure and optical properties of ZnO nanowires grown by MOCVD

NASA Astrophysics Data System (ADS)

Souissi, H.; Jabri, S.; Souissi, A.; Lusson, A.; Galtier, P.; Meftah, A.; Sallet, V.; Oueslati, M.

2018-01-01

Al-doped ZnO nanowires (NWs) were grown on C-axis oriented sapphire by metal organic chemical vapor deposition using dimethylzinc-triethylamine (DMZn-TEN), nitrogen dioxide (NO2) and TMAl as zinc, oxygen and aluminum doping sources respectively. The NWs morphology has been characterized by scanning electron microscopy and transmission electron microscopy. The photoluminescence (PL) spectra exhibit a strong excitonic transition bond that confirms the Al incorporation in the ZnO NWs. Raman results support PL conclusion by showing additional modes in Al-doped ZnO NWs at nearly 270, 510, 579 and 641 cm-1. The micro-Raman scattering analysis along a single Al-doped ZnO needle-like NW shows an increase of the Al concentration from the basis to the tip of the wire.

Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

PubMed

Li, Changyi; Wright, Jeremy B; Liu, Sheng; Lu, Ping; Figiel, Jeffrey J; Leung, Benjamin; Chow, Weng W; Brener, Igal; Koleske, Daniel D; Luk, Ting-Shan; Feezell, Daniel F; Brueck, S R J; Wang, George T

2017-02-08

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Nonpolar InGaN/GaN core–shell single nanowire lasers

DOE PAGES

Li, Changyi; Wright, Jeremy Benjamin; Liu, Sheng; ...

2017-01-24

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core–shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core–shell nanowires, despite significantly shorter cavity lengths and reducedmore » active region volume. Mode simulations show that due to the core–shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. Furthermore, the results show the viability of this p-i-n nonpolar core–shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV–visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.« less

Effect of morphology evolution on the thermoelectric properties of oxidized ZnO thin films

NASA Astrophysics Data System (ADS)

Liu, Shiying; Li, Guojian; Xiao, Lin; Jia, Baohai; Gao, Yang; Wang, Qiang

2018-04-01

The effects of nanowire content on the thermoelectric properties of ZnO films were investigated. The nanowire content of ZnO films was tuned by thermal oxidation of evaporated Zn films. The results showed that hexagonal and polyhedral morphologies on the surface of Zn films can be used to tune the nanowire content of ZnO films. Hexagonal nanoplates with a diameter of 100-350 nm readily grew ZnO nanowires with c-axis preferential orientation. Conversely, it was difficult to grow nanowires on polyhedral nanoparticles with diameters of 500-750 nm because the meeting of ZnO (101) and (001) facets suppressed nanowire growth. Thermoelectric parameters were strongly affected by nanowire content. In particular, carrier concentration increased with nanowire content. Carrier mobility also increased with nanowire content because the nanowires behaved as channels for electronic migration. The band gap of the films narrowed with increasing nanowire content because the binding energy of O 1s electrons with oxygen vacancies decreased. The maximum power factor of the film with high nanowire content (8.80 μW/m K2 at 530 K) was approximately 300% higher than that of the film with low nanowire content.

Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires.

PubMed

Jia, Shuangfeng; Hu, Shuaishuai; Zheng, He; Wei, Yanjie; Meng, Shuang; Sheng, Huaping; Liu, Huihui; Zhou, Siyuan; Zhao, Dongshan; Wang, Jianbo

2018-06-11

Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the applications in future advanced nanodevices. In this study, the atomistic vapor-solid-liquid growth processes of Sn-catalyzed wurtzite (WZ) and zinc blende (ZB) ZnO are directly revealed based on the in situ transmission electron microscopy. The growth kinetics of WZ and ZB crystal phases in ZnO appear markedly different in terms of the NW-droplet interface, whereas the nucleation site as determined by the contact angle ϕ between the seed particle and the NW is found to be crucial for tuning the NW structure through combined experimental and theoretical investigations. These results offer an atomic-scale view into the dynamic growth process of ZnO NW, which has implications for the phase-controllable synthesis of II-VI compounds and heterostructures with tunable band structures.

Single Zno Nanowire-Based Biofet Sensors for Ultrasensitive, Label-Free and Real-Time Detection of Uric Acid

NASA Astrophysics Data System (ADS)

Lin, Pei; Liu, Xi; Yan, Xiaoqin; Kang, Zhuo; Lei, Yang; Zhao, Yanguang

2012-08-01

Qualitative and quantitative detection of biological and chemical species is crucial in many areas, ranging from clinical diagnosis to homeland security. Due to the advantages of ultrahigh sensitivity, label-free, fast readout and easy fabrication over the traditional detection systems, semiconductor nanowire based electronic devices have emerged as a potential platform. In this paper, we fabricated a single ZnO nanowire-based bioFET sensor for the detection of low and high concentration uric acid solution at the same time. The addition of uric acid with the concentrations from 1 pM to 0.5 mM resulted in the electrical conductance changes of up to 227 nS, and the response time turns out to be in the order of millisecond. The ZnO NW biosensor could easily detect as low as 1 pM of the uric acid with 14.7 nS of conductance increase, which implied that the sensitivity of the biosensor can be below the 1pM concentration.

Facile preparation of branched hierarchical ZnO nanowire arrays with enhanced photocatalytic activity: A photodegradation kinetic model

NASA Astrophysics Data System (ADS)

Ebrahimi, M.; Yousefzadeh, S.; Samadi, M.; Dong, Chunyang; Zhang, Jinlong; Moshfegh, A. Z.

2018-03-01

Branched hierarchical zinc oxide nanowires (BH-ZnO NWs) were fabricated successfully by a facile and rapid synthesis using two-step growth process. Initially, ZnO NWs have been prepared by anodizing zinc foil at room temperature and followed by annealing treatment. Then, the BH- ZnO NWs were grown on the ZnO NWs by a solution based method at very low temperature (31 oC). The BH- ZnO NWs with different aspect ratio were obtained by varying reaction time (0.5, 2, 5, 10 h). Photocatalytic activity of the samples was studied under both UV and visible light. The results indicated that the optimized BH-ZnO NWs (5 h) as a photocatalyst exhibited the highest photoactivity with about 3 times higher than the ZnO NWs under UV light. In addition, it was also determined that photodegradation rate constant (k) for the BH- ZnO NWs surface obeys a linear function with the branch length (l) and their correlation was described by using a proposed kinetic model.

Plasmonic Properties of Vertically Aligned Nanowire Arrays

DTIC Science & Technology

2012-01-01

scattering (SERS) applications. In this investigation, two types of vertical NW arrays were studied; those of ZnO NWs grown on nanosphere lithography...plasmonic nanowires to investigate this SERS effect. Here we used two types of vertical NWs, ZnO NWs, and Si NWs, respectively, to investigate SERS...successfully grow vertically aligned ZnO nanowires by the well-known VLS process. In this way, the ZnO NWs can be arranged in a repeatable hexagonal pattern

Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation.

PubMed

Donatini, Fabrice; Pernot, Julien

2018-03-09

In semiconductor nanowires (NWs) the exciton diffusion coefficient can be determined using a scanning electron microscope fitted with a cathodoluminescence system. High spatial and temporal resolution cathodoluminescence experiments are needed to measure independently the exciton diffusion length and lifetime in single NWs. However, both diffusion length and lifetime can be affected by the electron beam bombardment during observation and measurement. Thus, in this work the exciton lifetime in a ZnO NW is measured versus the electron beam dose (EBD) via a time-resolved cathodoluminescence experiment with a temporal resolution of 50 ps. The behavior of the measured exciton lifetime is consistent with our recent work on the EBD dependence of the exciton diffusion length in similar NWs investigated under comparable SEM conditions. Combining the two results, the exciton diffusion coefficient in ZnO is determined at room temperature and is found constant over the full span of EBD.

Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

NASA Astrophysics Data System (ADS)

Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

2017-11-01

A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

The impact of nanocontact on nanowire based nanoelectronics.

PubMed

Lin, Yen-Fu; Jian, Wen-Bin

2008-10-01

Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.

Template-Assisted Hydrothermal Growth of One-Dimensional Zinc Oxide Nanowires for Photocatalytic Application.

PubMed

Ma, Shuai-Shuai; Xu, Peng; Cai, Zhi-Lan; Li, Qing; Ye, Zhao-Lian; Zhou, Yu-Ming

2018-07-01

One-dimensional (1D) semiconductor ZnO nanowires have been successfully synthesized by a novel soft-chemical hydrothermal method with allylpolyethoxy amino carboxylate (AA-APEA) at low temperature. Their structure and properties have been characterized by a series of techniques, including X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX) and transmission electron microscopy (TEM). It was found that ZnO nanowires with diameters around 50 nm and lengths up to about several micrometers are well-distributed. The photocatalytic activity toward degradation of methylene blue (MB) aqueous solution under ultraviolet (UV) was investigated and the results showed that the ZnO nanowires exhibit a markedly higher photoactivity compared to the ZnO nanoparticles which were obtained without AA-APEA polymer assistant, and it can be ascribed to the special 1D morphology of the ZnO nanowires. In particular, the rate of degradation of the ZnO nanowires was 11 times faster than that of ZnO nanoparticles. In addition, the ZnO nanowires could be easily recycled in UV photocatalytic activity. These observations could promote new applications of photocatalyst for wastewater treatment utilizing oxide semiconductor nanostructures.

Production of zinc oxide nanowires power with precisely defined morphology

NASA Astrophysics Data System (ADS)

Mičová, Júlia; Remeš, Zdeněk; Chan, Yu-Ying

2017-12-01

The interest about zinc oxide is increasing thanks to its unique chemical and physical properties. Our attention has focused on preparation powder of 1D nanostructures of ZnO nanowires with precisely defined morphology include characterization size (length and diameter) and shape controlled in the scanning electron microscopy (SEM). We have compared results of SEM with dynamic light scattering (DLS) technique. We have found out that SEM method gives more accurate results. We have proposed transformation process from ZnO nanowires on substrates to ZnO nanowires powder by ultrasound peeling to colloid followed by lyophilization. This method of the mass production of the ZnO nanowires powder has some advantages: simplicity, cost effective, large-scale and environment friendly.

High-efficiency second harmonic generation from a single hybrid ZnO nanowire/Au plasmonic nano-oligomer.

PubMed

Grinblat, Gustavo; Rahmani, Mohsen; Cortés, Emiliano; Caldarola, Martín; Comedi, David; Maier, Stefan A; Bragas, Andrea V

2014-11-12

We introduce a plasmonic-semiconductor hybrid nanosystem, consisting of a ZnO nanowire coupled to a gold pentamer oligomer by crossing the hot-spot. It is demonstrated that the hybrid system exhibits a second harmonic (SH) conversion efficiency of ∼3 × 10(-5)%, which is among the highest values for a nanoscale object at optical frequencies reported so far. The SH intensity was found to be ∼1700 times larger than that from the same nanowire excited outside the hot-spot. Placing high nonlinear susceptibility materials precisely in plasmonic confined-field regions to enhance SH generation opens new perspectives for highly efficient light frequency up-conversion on the nanoscale.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

PubMed

Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

2015-11-03

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

PubMed Central

Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

2015-01-01

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

Silver nanowires network encapsulated by low temperature sol-gel ZnO for transparent flexible electrodes with ambient stability

NASA Astrophysics Data System (ADS)

Shin, Wonjung; Cho, Wonki; Baik, Seung Jae

2018-01-01

As a geometrically engineered realization of transparent electrode, Ag nanowires network is promising for its superior characteristics both on electrical conductivity and optical transmittance. However, for a potential commercialization of Ag nanowires network, further investigations on encapsulation materials are necessary to prevent degradation caused by ambient aging. In addition, the temperature range of the coating process for the encapsulation material needs to be low enough to prevent degradation of polymer substrates during the film coating processes, when considering emerging flexible device application of transparent electrodes. We present experimental results showing that low temperature sol-gel ZnO processed under 130 °C is an effective encapsulation material preventing ambient oxidation of Ag nanowires network without degrading electrical, optical, and mechanical properties.

Toward blue emission in ZnO based LED

NASA Astrophysics Data System (ADS)

Viana, Bruno; Pauporté, Thierry; Lupan, Oleg; Le Bahers, Tangui; Ciofini, Ilaria

2012-03-01

The bandgap engineering of ZnO nanowires by doping is of great importance for tunable light emitting diode (LED) applications. We present a combined experimental and computational study of ZnO doping with Cd or Cu atoms in the nanomaterial. Zn1-xTMxO (TM=Cu, Cd) nanowires have been epitaxially grown on magnesium-doped p-GaN by electrochemical deposition. The Zn1-xTMxO/p-GaN heterojunction was integrated in a LED structure. Nanowires act as the light emitters and waveguides. At room temperature, TM-doped ZnO based LEDs exhibit low-threshold emission voltage and electroluminescence emission shifted from ultraviolet to violet-blue spectral region compared to pure ZnO LEDs. The emission wavelength can be tuned by changing the transition metal (TM) content in the ZnO nanomaterial and the shift is discussed, including insights from DFT computational investigations.

Second-harmonic generation of ZnO nanoparticles synthesized by laser ablation of solids in liquids

NASA Astrophysics Data System (ADS)

Rocha-Mendoza, Israel; Camacho-López, Santiago; Luna-Palacios, Yryx Y.; Esqueda-Barrón, Yasmín; Camacho-López, Miguel A.; Camacho-López, Marco; Aguilar, Guillermo

2018-02-01

We report the synthesis of small zinc oxide nanoparticles (ZnO NPs) based colloidal suspensions and the study of second-harmonic generation from aggregated ZnO NPs deposited on glass substrates. The colloidal suspensions were obtained using the laser ablation of solids in liquids technique, ablating a Zn solid target immersed in acetone as the liquid medium, with ns-laser pulses (1064 nm) of a Nd-YAG laser. The per pulse laser fluence, the laser repetition rate frequency and the ablation time were kept constant. The absorption evolution of the obtained suspensions was optically characterized through absorption spectroscopy until stabilization. Raman spectroscopy, SEM and HRTEM were used to provide evidence of the ZnO NPs structure. HRTEM results showed that 5-8 nm spheroids ZnO NPs were obtained. Strong second-harmonic signal is obtained from random ZnO monocrystalline NPs and from aggregated ZnO NPs, suggesting that the high efficiency of the nonlinear process may not depend on the NPs size or aggregation state.

Formation of Ordered and Disordered Dielectric/metal Nanowire Arrays and their Plasmonic Behavior

DTIC Science & Technology

2007-01-01

sheath geometry. 2. EXPERIMENTAL PROCEDURES Several different nanowire systems have been grown, including random Ga2O3 nanowires, InAs...nanowires, ZnO nanowires, as well as Au lines produced by e-beam lithography. The growth of the Ga2O3 nanowires was achieved by the controlled oxidation...CLOSELY-SPACED PARALLEL ZnO NANOWIRES AND CROSSED Ga2O3 NANOWIRES. As discussed above, due to the far separation of the gold colloid catalyst in the

In situ biasing and off-axis electron holography of a ZnO nanowire

NASA Astrophysics Data System (ADS)

den Hertog, Martien; Donatini, Fabrice; McLeod, Robert; Monroy, Eva; Sartel, Corinne; Sallet, Vincent; Pernot, Julien

2018-01-01

Quantitative characterization of electrically active dopants and surface charges in nano-objects is challenging, since most characterization techniques using electrons [1-3], ions [4] or field ionization effects [5-7] study the chemical presence of dopants, which are not necessarily electrically active. We perform cathodoluminescence and voltage contrast experiments on a contacted and biased ZnO nanowire with a Schottky contact and measure the depletion length as a function of reverse bias. We compare these results with state-of-the-art off-axis electron holography in combination with electrical in situ biasing on the same nanowire. The extension of the depletion length under bias observed in scanning electron microscopy based techniques is unusual as it follows a linear rather than square root dependence, and is therefore difficult to model by bulk equations or finite element simulations. In contrast, the analysis of the axial depletion length observed by holography may be compared with three-dimensional simulations, which allows estimating an n-doping level of 1 × 1018 cm-3 and negative sidewall surface charge of 2.5 × 1012 cm-2 of the nanowire, resulting in a radial surface depletion to a depth of 36 nm. We found excellent agreement between the simulated diameter of the undepleted core and the active thickness observed in the experimental data. By combining TEM holography experiments and finite element simulation of the NW electrostatics, the bulk-like character of the nanowire core is revealed.

Improved efficiency of hybrid organic photovoltaics by pulsed laser sintering of silver nanowire network transparent electrode.

PubMed

Spechler, Joshua A; Nagamatsu, Ken A; Sturm, James C; Arnold, Craig B

2015-05-20

In this Research Article, we demonstrate pulsed laser processing of a silver nanowire network transparent conductor on top of an otherwise complete solar cell. The macroscopic pulsed laser irradiation serves to sinter nanowire-nanowire junctions on the nanoscale, leading to a much more conductive electrode. We fabricate hybrid silicon/organic heterojunction photovoltaic devices, which have ITO-free, solution processed, and laser processed transparent electrodes. Furthermore, devices which have high resistive losses show up to a 35% increase in power conversion efficiency after laser processing. We perform this study over a range of laser fluences, and a range of nanowire area coverage to investigate the sintering mechanism of nanowires inside of a device stack. The increase in device performance is modeled using a simple photovoltaic diode approach and compares favorably to the experimental data.

High-Density ZnO Nanowires as a Reversible Myogenic-Differentiation Switch.

PubMed

Errico, Vito; Arrabito, Giuseppe; Fornetti, Ersilia; Fuoco, Claudia; Testa, Stefano; Saggio, Giovanni; Rufini, Stefano; Cannata, Stefano; Desideri, Alessandro; Falconi, Christian; Gargioli, Cesare

2018-04-25

Mesoangioblasts are outstanding candidates for stem-cell therapy and are already being explored in clinical trials. However, a crucial challenge in regenerative medicine is the limited availability of undifferentiated myogenic progenitor cells because growth is typically accompanied by differentiation. Here reversible myogenic-differentiation switching during proliferation is achieved by functionalizing the glass substrate with high-density ZnO nanowires (NWs). Specifically, mesoangioblasts grown on ZnO NWs present a spherical viable undifferentiated cell state without lamellopodia formation during the entire observation time (8 days). Consistently, the myosin heavy chain, typically expressed in skeletal muscle tissue and differentiated myogenic progenitors, is completely absent. Remarkably, NWs do not induce any damage while they reversibly block differentiation, so that the differentiation capabilities are completely recovered upon cell removal from the NW-functionalized substrate and replating on standard culture glass. This is the first evidence of a reversible myogenic-differentiation switch that does not affect the viability. These results can be the first step toward for the in vitro growth of a large number of undifferentiated stem/progenitor cells and therefore can represent a breakthrough for cell-based therapy and tissue engineering.

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

PubMed

Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

2018-01-10

A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

Enhanced photoelectric performance in self-powered UV detectors based on ZnO nanowires with plasmonic Au nanoparticles scattered electrolyte

NASA Astrophysics Data System (ADS)

Zeng, Yiyu; Ye, Zhizhen; Lu, Bin; Dai, Wei; Pan, Xinhua

2016-04-01

Vertically aligned ZnO nanowires (NWs) were grown on a fluorine-doped tin-oxide-coated glass substrate by a hydrothermal method. Au nanoparticles were well dispersed in the mixed solution of ethanol and deionized water. A simple self-powered ultraviolet detector based on solid-liquid heterojunction was fabricated, utilizing ZnO NWs as active photoanode and such prepared mixed solution as electrolyte. The introduction of Au nanoparticles results in considerable improvements in the responsivity and sensitivity of the device compared with the one using deionized water as electrolyte, which is attributed to the enhanced light harvesting by Au nanoparticles.

Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires.

PubMed

Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig

2013-05-01

In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of +/- 1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu2O NP film and the single ZnO NW.

Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.

PubMed

Li, Huifeng; Huang, Yunhua; Zhang, Qi; Qiao, Yi; Gu, Yousong; Liu, Jing; Zhang, Yue

2011-02-01

In this article, Co/Mn-codoped ZnO nanowires (NWs) were successfully synthesized on a silicon substrate by the thermal evaporation method with Au catalyst. The X-ray diffraction pattern indicated that the Co/Mn-codoped ZnO NWs are a hexagonal wurtzite structure without a second phase, and energy dispersive X-ray spectroscopy revealed that the Co and Mn ions were introduced into the ZnO NWs with the content of ∼0.8 at% and ∼1.2 at%, respectively. Photoluminescence spectra and Raman spectra showed that the Co/Mn were doped into the NWs and resulted in the shift of the near-band-edge emission. Moreover, the novel Raman peak at 519.3 cm(-1) has suggested that the two kinds of cations via doping could affect the local polarizability. Compared with the undoped ZnO NW, the electrical measurement showed that the Co/Mn-codoping enhanced the conductivity by an order of magnitude due to the presence of Co, Mn cations. The electron mobility and carrier concentration of a fabricated field effect transistor (FET) device is 679 cm2 V(-1) s(-1) and 2×10(18) cm(-3), respectively. Furthermore, the M-H curve demonstrated that the Co/Mn-codoped ZnO NWs have obvious ferromagnetic characteristics at room temperature. Our study enhances the understanding of the novel performances of transition-metal codoped ZnO NWs and also provides a potential way to fabricate optoelectronic devices.

Luminescence studies of laser MBE grown GaN on ZnO nanostructures

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Kapoor, Ashok K.; Tandon, R. P.; Gupta, Vinay

2017-08-01

GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE) technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si (100) substrates. The ZnO nanostructures were grown on Si (100) substrate using high pressure assisted Pulsed laser deposition technique in inert gas ambience. Discrete nanostructured morphology of ZnO was obtained using the PLD growth on Si substrates. Photoluminescence studies performed on the prepared GaN/Sapphire and GaN/ZnO-NS/Si systems, revealed a significant PL enhancement in case of GaN/ZnO-NS/Si system compared to the former. The hexagonal nucleation sites provided by the ZnO nanostructures strategically enhanced the emission of GaN film grown by Laser MBE Technique at relatively lower temperature of 700°C. The obtained results are attractive for the realization of highly luminescent GaN films on Si substrate for photonic devices.

Intrinsic polarization control in rectangular GaN nanowire lasers

DOE PAGES

Li, Changyi; Liu, Sheng; Luk, Ting S.; ...

2016-02-01

In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm 2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent controlmore » over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.« less

TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

NASA Astrophysics Data System (ADS)

Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

2017-12-01

Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

PubMed Central

Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan

2017-01-01

Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials. PMID:29308265

Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

NASA Astrophysics Data System (ADS)

Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

2016-02-01

Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

Nanowire lasers as intracellular probes.

PubMed

Wu, Xiaoqin; Chen, Qiushu; Xu, Peizhen; Chen, Yu-Cheng; Wu, Biming; Coleman, Rhima M; Tong, Limin; Fan, Xudong

2018-05-24

We investigate a cadmium sulfide (CdS) nanowire (NW) laser that is spontaneously internalized into a single cell to serve as a stand-alone intracellular probe. By pumping with nano-joule light pulses, green laser emission (500-520 nm) can be observed inside cells with a peak linewidth as narrow as 0.5 nm. Due to the sub-micron diameter (∼200 nm), the NW has an appreciable fraction of the evanescent field outside, facilitating a sensitive detection of cellular environmental changes. By monitoring the lasing peak wavelength shift in response to the intracellular refractive index change, our NW laser probe shows a sensitivity of 55 nm per RIU (refractive index units) and a figure of merit of approximately 98.

Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si

DTIC Science & Technology

2015-08-30

Ultrahigh-Speed Electrically Injected 1.55 um Quantum Dot Microtube and Nanowire Lasers on Si In this report, we describe the progress made in rolled...up InP-based tube lasers and in the growth and characterization of III-nitride nanowire structures on Si. We report on the demonstration of...injected AlGaN nanowire lasers that can operate in the UV-AII (315-340 nm), UV-B (280-315nm), and UV-C (200-280 nm). The views, opinions and/or findings

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules.

PubMed

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-08

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (R air/R gas = 12.8) compared to that (R air/R gas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

PubMed Central

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors. PMID:26743814

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

NASA Astrophysics Data System (ADS)

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

PubMed

Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

2014-08-21

On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Chang-Yong; Stein, Aaron

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE PAGES

Nam, Chang-Yong; Stein, Aaron

2017-11-15

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method

NASA Astrophysics Data System (ADS)

Zhong, Kun; Xu, Jie; Su, Jing; Chen, Yu lin

2011-02-01

Nitrogen and erbium co-doped of ZnO nanowires (NWs) are fabricated by ion implantation and subsequent annealing in air. The incorporation of Er3+ and N+ ions is verified by energy dispersive X-ray spectroscopy (EDS) and Raman spectra. The samples exhibit upconversion photoluminescence around ∼550 nm and ∼660 nm under an excitation at 980 nm. It is discovered that the N-doped can drastically increase the upconversion photoluminescence intensity by modifying the local structure around Er3+ in ZnO matrix. The enhancement of the PL intensity by the N-doped is caused by the formation of ErO6-xNx octahedron complexes. With the increase of the annealing temperature (Ta), the Er3+ ions diffuse towards the surface of the NWs, which benefits the red emission and evokes the variation of intensity ratio owing to the existence of some organic groups.

Nanowire Lasers of Formamidinium Lead Halide Perovskites and Their Stabilized Alloys with Improved Stability

DOE PAGES

Fu, Yongping; Zhu, Haiming; Schrader, Alex W.; ...

2016-01-04

The excellent intrinsic optoelectronic properties of methylammonium lead halide perovskites (MAPbX 3, X = Br, I), such as high photoluminescence quantum efficiency, long carrier lifetime, and high gain coupled with the facile solution growth of nanowires make them promising new materials for ultralow-threshold nanowire lasers. However, their photo and thermal stabilities need to be improved for practical applications. Herein, we report a low-temperature solution growth of single crystal nanowires of formamidinium lead halide perovskites (FAPbX 3) that feature red-shifted emission and better thermal stability compared to MAPbX 3. We demonstrate optically pumped room-temperature near-infrared (~820 nm) and green lasing (~560more » nm) from FAPbI 3 (and MABr-stabilized FAPbI 3) and FAPbBr 3 nanowires with low lasing thresholds of several microjoules per square centimeter and high quality factors of about 1500–2300. More remarkably, the FAPbI 3 and MABr-stabilized FAPbI 3 nanowires display durable room-temperature lasing under ~10 8 shots of sustained illumination of 402 nm pulsed laser excitation (150 fs, 250 kHz), substantially exceeding the stability of MAPbI 3 (~10 7 laser shots). We further demonstrate tunable nanowire lasers in wider wavelength region from FA-based lead halide perovskite alloys (FA,MA)PbI 3 and (FA,MA)Pb(I,Br) 3 through cation and anion substitutions. The results suggest that formamidinium lead halide perovskite nanostructures could be more promising and stable materials for the development of light-emitting diodes and continuous-wave lasers.« less

Nanowire Lasers of Formamidinium Lead Halide Perovskites and Their Stabilized Alloys with Improved Stability.

PubMed

Fu, Yongping; Zhu, Haiming; Schrader, Alex W; Liang, Dong; Ding, Qi; Joshi, Prakriti; Hwang, Leekyoung; Zhu, X-Y; Jin, Song

2016-02-10

The excellent intrinsic optoelectronic properties of methylammonium lead halide perovskites (MAPbX3, X = Br, I), such as high photoluminescence quantum efficiency, long carrier lifetime, and high gain coupled with the facile solution growth of nanowires make them promising new materials for ultralow-threshold nanowire lasers. However, their photo and thermal stabilities need to be improved for practical applications. Herein, we report a low-temperature solution growth of single crystal nanowires of formamidinium lead halide perovskites (FAPbX3) that feature red-shifted emission and better thermal stability compared to MAPbX3. We demonstrate optically pumped room-temperature near-infrared (∼820 nm) and green lasing (∼560 nm) from FAPbI3 (and MABr-stabilized FAPbI3) and FAPbBr3 nanowires with low lasing thresholds of several microjoules per square centimeter and high quality factors of about 1500-2300. More remarkably, the FAPbI3 and MABr-stabilized FAPbI3 nanowires display durable room-temperature lasing under ∼10(8) shots of sustained illumination of 402 nm pulsed laser excitation (150 fs, 250 kHz), substantially exceeding the stability of MAPbI3 (∼10(7) laser shots). We further demonstrate tunable nanowire lasers in wider wavelength region from FA-based lead halide perovskite alloys (FA,MA)PbI3 and (FA,MA)Pb(I,Br)3 through cation and anion substitutions. The results suggest that formamidinium lead halide perovskite nanostructures could be more promising and stable materials for the development of light-emitting diodes and continuous-wave lasers.

Laser-induced Greenish-Blue Photoluminescence of Mesoporous Silicon Nanowires

PubMed Central

Choi, Yan-Ru; Zheng, Minrui; Bai, Fan; Liu, Junjun; Tok, Eng-Soon; Huang, Zhifeng; Sow, Chorng-Haur

2014-01-01

Solid silicon nanowires and their luminescent properties have been widely studied, but lesser is known about the optical properties of mesoporous silicon nanowires (mp-SiNWs). In this work, we present a facile method to generate greenish-blue photoluminescence (GB-PL) by fast scanning a focused green laser beam (wavelength of 532 nm) on a close-packed array of mp-SiNWs to carry out photo-induced chemical modification. The threshold of laser power is 5 mW to excite the GB-PL, whose intensity increases with laser power in the range of 5–105 mW. The quenching of GB-PL comes to occur beyond 105 mW. The in-vacuum annealing effectively excites the GB-PL in the pristine mp-SiNWs and enhances the GB-PL of the laser-modified mp-SiNWs. A complex model of the laser-induced surface modification is proposed to account for the laser-power and post-annealing effect. Moreover, the fast scanning of focused laser beam enables us to locally tailor mp-SiNWs en route to a wide variety of micropatterns with different optical functionality, and we demonstrate the feasibility in the application of creating hidden images. PMID:24820533

Laser Processed Silver Nanowire Network Transparent Electrodes for Novel Electronic Devices

NASA Astrophysics Data System (ADS)

Spechler, Joshua Allen

Silver nanowire network transparent conducting layers are poised to make headway into a space previously dominated by transparent conducting oxides due to the promise of a flexible, scaleable, lab-atmosphere processable alternative. However, there are many challenges standing in the way between research scale use and consumer technology scale adaptation of this technology. In this thesis we will explore many, and overcome a few of these challenges. We will address the poor conductivity at the narrow nanowire-nanowire junction points in the network by developing a laser based process to weld nanowires together on a microscopic scale. We address the need for a comparative metric for transparent conductors in general, by taking a device level rather than a component level view of these layers. We also address the mechanical, physical, and thermal limitations to the silver nanowire networks by making composites from materials including a colorless polyimide and titania sol-gel. Additionally, we verify our findings by integrating these processes into devices. Studying a hybrid organic/inorganic heterojunction photovoltaic device we show the benefits of a laser processed electrode. Green phosphorescent organic light emitting diodes fabricated on a solution phase processed silver nanowire based electrode show favorable device metrics compared to a conductive oxide electrode based control. The work in this thesis is intended to push the adoption of silver nanowire networks to further allow new device architectures, and thereby new device applications.

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

NASA Astrophysics Data System (ADS)

Nedic, Stanko; Tea Chun, Young; Hong, Woong-Ki; Chu, Daping; Welland, Mark

2014-01-01

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ˜16.5 V, a high drain current on/off ratio of ˜105, a gate leakage current below ˜300 pA, and excellent retention characteristics for over 104 s.

Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter.

PubMed

Hosseini Shokouh, Seyed Hossein; Pezeshki, Atiye; Ali Raza, Syed Raza; Choi, Kyunghee; Min, Sung-Wook; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

2014-05-27

We demonstrate a hybrid inverter-type nanodevice composed of a MoS2 nanoflake field-effect transistor (FET) and ZnO nanowire Schottky diode on one substrate, aiming at a one-dimensional (1D)-two-dimensional (2D) hybrid integrated electronic circuit with multifunctional capacities of low power consumption, high gain, and photodetection. In the present work, we used a nanotransfer printing method using polydimethylsiloxane for the fabrication of patterned bottom-gate MoS2 nanoflake FETs, so that they could be placed near the ZnO nanowire Schottky diodes that were initially fabricated. The ZnO nanowire Schottky diode and MoS2 FET worked respectively as load and driver for a logic inverter, which exhibits a high voltage gain of ∼50 at a supply voltage of 5 V and also shows a low power consumption of less than 50 nW. Moreover, our inverter effectively operates as a photoinverter, detecting visible photons, since MoS2 FETs appear very photosensitive, while the serially connected ZnO nanowire Schottky diode was blind to visible light. Our 1D-2D hybrid nanoinverter would be quite promising for both logic and photosensing applications due to its performance and simple device configuration as well.

Fast Response and High Sensitivity of ZnO Nanowires-Cobalt Phthalocyanine Heterojunction Based H2S Sensor.

PubMed

Kumar, Ashwini; Samanta, Soumen; Singh, Ajay; Roy, Mainak; Singh, Surendra; Basu, Saibal; Chehimi, Mohmad M; Roy, Kallol; Ramgir, Niranjan; Navaneethan, M; Hayakawa, Y; Debnath, Anil K; Aswal, Dinesh K; Gupta, Shiv K

2015-08-19

The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p-n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p-n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

One-dimensional ZnO nanostructures.

PubMed

Jayadevan, K P; Tseng, T Y

2012-06-01

The wide-gap semiconductor ZnO with nanostructures such as nanoparticle, nanorod, nanowire, nanobelt, nanotube has high potential for a variety of applications. This article reviews the fundamentals of one-dimensional ZnO nanostructures, including processing, structure, property, application and their processing-microstructure-property correlation. Various fabrication methods of the ZnO nanostructures including vapor-liquid-solid process, vapor-solid growth, solution growth, solvothermal growth, template-assisted growth and self-assembly are introduced. The characterization and properties of the ZnO nanostructures are described. The possible applications of these nanostructures are also discussed.

Comparative study on CO2 and CO sensing performance of LaOCl-coated ZnO nanowires.

PubMed

Van Hieu, Nguyen; Khoang, Nguyen Duc; Trung, Do Dang; Toan, Le Duc; Van Duy, Nguyen; Hoa, Nguyen Duc

2013-01-15

Carbon dioxide (CO(2)) and carbon monoxide (CO) emissions from industries and combustion fuels such as coal, oil, hydrocarbon, and natural gases are increasing, thus causing environmental pollution and climate change. The selective detection of CO(2) and CO gases is important for environmental monitoring and industrial safety applications. In this work, LaOCl-coated ZnO nanowires (NWs) sensors are fabricated and characterized for the detection of CO(2) (250-4000 ppm) and CO (10-200 ppm) gases at different operating temperatures. The effects of the LaCl(3) coating concentration and calcination temperature of the sensors are studied. They are found to have a strong influence on the sensing performance to CO(2) gas, but a relatively slight influence on that to CO. The LaOCl coating enhances the response and shortens the response and recovery times to CO(2) compared with those to CO. The enhanced response of the LaOCl-coated ZnO NW sensors is attributed to the extension of the electron depletion layer due to the formation of p-LaOCl/n-ZnO junctions on the surfaces of the ZnO NWs. Copyright © 2012 Elsevier B.V. All rights reserved.

Vertically Emitting Indium Phosphide Nanowire Lasers.

PubMed

Xu, Wei-Zong; Ren, Fang-Fang; Jevtics, Dimitars; Hurtado, Antonio; Li, Li; Gao, Qian; Ye, Jiandong; Wang, Fan; Guilhabert, Benoit; Fu, Lan; Lu, Hai; Zhang, Rong; Tan, Hark Hoe; Dawson, Martin D; Jagadish, Chennupati

2018-06-13

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.

Mask-free, vacuum-free fabrication of high-conductivity metallic nanowire by spatially shaped ultrafast laser (Conference Presentation)

NASA Astrophysics Data System (ADS)

Wang, Andong; Li, Xiaowei; Qu, Lianti; Lu, Yongfeng; Jiang, Lan

2017-03-01

Metal nanowire fabrication has drawn tremendous attention in recent years due to its wide application in electronics, optoelectronics, and plasmonics. However, conventional laser fabrication technologies are limited by diffraction limit thus the fabrication resolution cannot meet the increasingly high demand of modern devices. Herein we report on a novel method for high-resolution high-quality metal nanowire fabrication by using Hermite-Gaussian beam to ablate metal thin film. The nanowire is formed due to the intensity valley in the center of the laser beam while the surrounding film is ablated. Arbitrary nanowire can be generated on the substrate by dynamically adjusting the orientation of the intensity valley. This method shows obvious advantages compared to conventional methods. First, the minimum nanowire has a width of 60 nm (≍1/13 of the laser wavelength), which is much smaller than the diffraction limit. The high resolution is achieved by combining the ultrashort nature of the femtosecond laser and the low thermal conductivity of the thin film. In addition, the fabricated nanowires have good inside qualities. No inner nanopores and particle intervals are generated inside the nanowire, thus endowing the nanowire with good electronic characteristics: the conductivity of the nanowires is as high as 1.2×107 S/m (≍1/4 of buck material), and the maximum current density is up to 1.66×108 A/m2. Last, the nanowire has a good adhesion to the substrates, which can withstand ultrasonic bath for a long time. These advantages make our method a good approach for high-resolution high-quality nanowire fabrication as a complementary method to conventional lithography methods.

Review on the dynamics of semiconductor nanowire lasers

NASA Astrophysics Data System (ADS)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Fast-Response Single-Nanowire Photodetector Based on ZnO/WS2 Core/Shell Heterostructures.

PubMed

Butanovs, Edgars; Vlassov, Sergei; Kuzmin, Alexei; Piskunov, Sergei; Butikova, Jelena; Polyakov, Boris

2018-04-25

The surface plays an exceptionally important role in nanoscale materials, exerting a strong influence on their properties. Consequently, even a very thin coating can greatly improve the optoelectronic properties of nanostructures by modifying the light absorption and spatial distribution of charge carriers. To use these advantages, 1D/1D heterostructures of ZnO/WS 2 core/shell nanowires with a-few-layers-thick WS 2 shell were fabricated. These heterostructures were thoroughly characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. Then, a single-nanowire photoresistive device was assembled by mechanically positioning ZnO/WS 2 core/shell nanowires onto gold electrodes inside a scanning electron microscope. The results show that a few layers of WS 2 significantly enhance the photosensitivity in the short wavelength range and drastically (almost 2 orders of magnitude) improve the photoresponse time of pure ZnO nanowires. The fast response time of ZnO/WS 2 core/shell nanowire was explained by electrons and holes sinking from ZnO nanowire into WS 2 shell, which serves as a charge carrier channel in the ZnO/WS 2 heterostructure. First-principles calculations suggest that the interface layer i-WS 2 , bridging ZnO nanowire surface and WS 2 shell, might play a role of energy barrier, preventing the backward diffusion of charge carriers into ZnO nanowire.

Increased short circuit current in organic photovoltaic using high-surface area electrode based on ZnO nanowires decorated with CdTe quantum dots.

PubMed

Aga, R S; Gunther, D; Ueda, A; Pan, Z; Collins, W E; Mu, R; Singer, K D

2009-11-18

A photosensitized high-surface area transparent electrode has been employed to increase the short circuit current of a photovoltaic device with a blend of poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. This is achieved by directly growing ZnO nanowires on indium tin oxide (ITO) film via a physical vapor method. The nanowire surface is then decorated with CdTe quantum dots by pulsed electron-beam deposition (PED). The nanowires alone provided a 20-fold increase in the short circuit current under visible light illumination. This was further increased by a factor of approximately 1.5 by the photosensitization effect of CdTe, which has an optical absorption of up to 820 nm.

Exogenous Gene Integration for Microalgal Cell Transformation Using a Nanowire-Incorporated Microdevice.

PubMed

Bae, Sunwoong; Park, Seunghye; Kim, Jung; Choi, Jong Seob; Kim, Kyung Hoon; Kwon, Donguk; Jin, EonSeon; Park, Inkyu; Kim, Do Hyun; Seo, Tae Seok

2015-12-16

Superior green algal cells showing high lipid production and rapid growth rate are considered as an alternative for the next generation green energy resources. To achieve the biomass based energy generation, transformed microalgae with superlative properties should be developed through genetic engineering. Contrary to the normal cells, microalgae have rigid cell walls, so that target gene delivery into cells is challengeable. In this study, we report a ZnO nanowire-incorporated microdevice for a high throughput microalgal transformation. The proposed microdevice was equipped with not only a ZnO nanowire in the microchannel for gene delivery into cells but also a pneumatic polydimethylsiloxane (PDMS) microvalve to modulate the cellular attachment and detachment from the nanowire. As a model, hygromycin B resistance gene cassette (Hyg3) was functionalized on the hydrothermally grown ZnO nanowires through a disulfide bond and released into green algal cells, Chlamydomonas reinhardtii, by reductive cleavage. During Hyg3 gene delivery, a monolithic PDMS membrane was bent down, so that algal cells were pushed down toward ZnO nanowires. The supply of vacuum in the pneumatic line made the PDMS membrane bend up, enabling the gene delivered algal cells to be recovered from the outlet of the microchannel. We successfully confirmed Hyg3 gene integrated in microalgae by amplifying the inserted gene through polymerase chain reaction (PCR) and DNA sequencing. The efficiency of the gene delivery to algal cells using the ZnO nanowire-incorporated microdevice was 6.52 × 10(4)- and 9.66 × 10(4)-fold higher than that of a traditional glass bead beating and electroporation.

High-gain subnanowatt power consumption hybrid complementary logic inverter with WSe2 nanosheet and ZnO nanowire transistors on glass.

PubMed

Shokouh, Seyed Hossein Hosseini; Pezeshki, Atiye; Ali Raza, Syed Raza; Lee, Hee Sung; Min, Sung-Wook; Jeon, Pyo Jin; Shin, Jae Min; Im, Seongil

2015-01-07

A 1D-2D hybrid complementary logic inverter comprising of ZnO nanowire and WSe2 nanosheet field-effect transistors (FETs) is fabricated on glass, which shows excellent static and dynamic electrical performances with a voltage gain of ≈60, sub-nanowatt power consumption, and at least 1 kHz inverting speed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metal Catalyst for Low-Temperature Growth of Controlled Zinc Oxide Nanowires on Arbitrary Substrates

PubMed Central

Kim, Baek Hyun; Kwon, Jae W.

2014-01-01

Zinc oxide nanowires generated by hydrothermal method present superior physical and chemical characteristics. Quality control of the growth has been very challenging and controlled growth is only achievable under very limited conditions using homogeneous seed layers with high temperature processes. Here we show the controlled ZnO nanowire growth on various organic and inorganic materials without the requirement of a homogeneous seed layer and a high temperature process. We also report the discovery of an important role of the electronegativity in the nanowire growth on arbitrary substrates. Using heterogeneous metal oxide interlayers with low-temperature hydrothermal methods, we demonstrate well-controlled ZnO nanowire arrays and single nanowires on flat or curved surfaces. A metal catalyst and heterogeneous metal oxide interlayers are found to determine lattice-match with ZnO and to largely influence the controlled alignment. These findings will contribute to the development of novel nanodevices using controlled nanowires. PMID:24625584

Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

PubMed Central

2012-01-01

Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A0X). The A0X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (Ea) of the A0X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs. PMID:22647319

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

PubMed

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Fabrication and characterization of Ga-doped ZnO / Si heterojunction nanodiodes

NASA Astrophysics Data System (ADS)

Akgul, Guvenc; Akgul, Funda Aksoy

2017-02-01

In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 103 ±3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.

Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires.

PubMed

Araneo, Rodolfo; Rinaldi, Antonio; Notargiacomo, Andrea; Bini, Fabiano; Pea, Marialilia; Celozzi, Salvatore; Marinozzi, Franco; Lovat, Giampiero

2014-12-08

Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy) characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews.

Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires

PubMed Central

Araneo, Rodolfo; Rinaldi, Antonio; Notargiacomo, Andrea; Bini, Fabiano; Pea, Marialilia; Celozzi, Salvatore; Marinozzi, Franco; Lovat, Giampiero

2014-01-01

Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy) characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews. PMID:25494351

Synchrotron emission from nanowire array targets irradiated by ultraintense laser pulses

NASA Astrophysics Data System (ADS)

Martinez, B.; d’Humières, E.; Gremillet, L.

2018-07-01

We present a numerical study, based on two-dimensional particle-in-cell simulations, of the synchrotron emission induced during the interaction of femtosecond laser pulses of intensities I = 1021–1023 W cm‑2 with nanowire arrays. Through an extensive parametric scan on the target parameters, we identify and characterize several dominant radiation mechanisms, mainly depending on the transparency or opacity of the plasma produced by the wire expansion. At I = 1022 W m‑2, the emission of high-energy (>10 keV) photons attains a maximum conversion efficiency of ∼10% for 36–50 nm wire widths and 1 μm interspacing. This maximum radiation yield is found to be similar to that achieved in a uniform plasma of same average (sub-solid) density, but nanowire arrays provide efficient radiation sources over a broader parameter range. Moreover, we examine the variations of the photon spectra with the laser intensity and the wire material, and we demonstrate that the radiation efficiency can be further enhanced by adding a plasma mirror at the backside of the nanowire array. Finally, we briefly consider the influence of a finite laser focal spot and oblique incidence angle.

A generic approach for vertical integration of nanowires.

PubMed

Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Lévy, F; Chelnokov, A

2008-08-27

We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.

Preparation of highly conductive, transparent, and flexible graphene/silver nanowires substrates using non-thermal laser photoreduction

NASA Astrophysics Data System (ADS)

Anis, Badawi; Mostafa, A. M.; El Sayed, Z. A.; Khalil, A. S. G.; Abouelsayed, A.

2018-07-01

We present the preparation of highly conducting, transparent, and flexible reduced graphene oxide/silver nanowires (rGO/SNWs) substrates using non-thermal laser photoreduction method. High quality monolayers graphene oxide (GO) solution has been prepared by the chemical oxidation of thermally expanded large area natural graphite. Silver nanowires was prepared by using the typical polyol method. Uniform hybrid GO/silver nanowires (GO/SNWs) was prepared by growing the nanowires from silver nuclei in the presence of GO. Uniform and high-quality rGO/SNWs thin films were prepared using a dip-coating technique and were reduced to highly electrically conductive graphene and transparent conductive films using non-thermal laser scribe method. The laser scribed rGO/SNWs hybrid film exhibited 80% transparency with 70 Ω □-1 after 20 min of dipping in GO/SNWs solution.

Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

NASA Astrophysics Data System (ADS)

Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

2018-05-01

ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Surfactant-Templated Mesoporous Metal Oxide Nanowires

DOE PAGES

Luo, Hongmei; Lin, Qianglu; Baber, Stacy; ...

2010-01-01

We demore » monstrate two approaches to prepare mesoporous metal oxide nanowires by surfactant assembly and nanoconfinement via sol-gel or electrochemical deposition. For example, mesoporous Ta 2 O 5 and zeolite nanowires are prepared by block copolymer Pluronic 123-templated sol-gel method, and mesoporous ZnO nanowires are prepared by electrodeposition in presence of anionic surfactant sodium dodecyl sulfate (SDS) surfactant, in porous membranes. The morphologies of porous nanowires are studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.« less

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

DOE PAGES

Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; ...

2016-10-14

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior wasmore » modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.« less

Fabrication of GaN doped ZnO nanocrystallines by laser ablation.

PubMed

Gopalakrishnan, N; Shin, B C; Bhuvana, K P; Elanchezhiyan, J; Balasubramanian, T

2008-08-01

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

Visible light-sensitive APTES-bound ZnO nanowire toward a potent nanoinjector sensing biomolecules in a living cell

NASA Astrophysics Data System (ADS)

Lee, Jooran; Choi, Sunyoung; Bae, Seon Joo; Yoon, Seok Min; Choi, Joon Sig; Yoon, Minjoong

2013-10-01

Nanoscale cell injection techniques combined with nanoscopic photoluminescence (PL) spectroscopy have been important issues in high-resolution optical biosensing, gene and drug delivery and single-cell endoscopy for medical diagnostics and therapeutics. However, the current nanoinjectors remain limited for optical biosensing and communication at the subwavelength level, requiring an optical probe such as semiconductor quantum dots, separately. Here, we show that waveguided red emission is observed at the tip of a single visible light-sensitive APTES-modified ZnO nanowire (APTES-ZnO NW) and it exhibits great enhancement upon interaction with a complementary sequence-based double stranded (ds) DNA, whereas it is not significantly affected by non-complementary ds DNA. Further, the tip of a single APTES-ZnO NW can be inserted into the subcellular region of living HEK 293 cells without significant toxicity, and it can also detect the enhancement of the tip emission from subcellular regions with high spatial resolution. These results indicate that the single APTES-ZnO NW would be useful as a potent nanoinjector which can guide visible light into intracellular compartments of mammalian cells, and can also detect nanoscopic optical signal changes induced by interaction with the subcellular specific target biomolecules without separate optical probes.Nanoscale cell injection techniques combined with nanoscopic photoluminescence (PL) spectroscopy have been important issues in high-resolution optical biosensing, gene and drug delivery and single-cell endoscopy for medical diagnostics and therapeutics. However, the current nanoinjectors remain limited for optical biosensing and communication at the subwavelength level, requiring an optical probe such as semiconductor quantum dots, separately. Here, we show that waveguided red emission is observed at the tip of a single visible light-sensitive APTES-modified ZnO nanowire (APTES-ZnO NW) and it exhibits great enhancement upon

Study of quantum confinement effects in ZnO nanostructures

NASA Astrophysics Data System (ADS)

Movlarooy, Tayebeh

2018-03-01

Motivation to fact that zinc oxide nanowires and nanotubes with successful synthesis and the mechanism of formation, stability and electronic properties have been investigated; in this study the structural, electronic properties and quantum confinement effects of zinc oxide nanotubes and nanowires with different diameters are discussed. The calculations within density functional theory and the pseudo potential approximation are done. The electronic structure and energy gap for Armchair and zigzag ZnO nanotubes with a diameter of about 4 to 55 Angstrom and ZnO nanowires with a diameter range of 4 to 23 Å is calculated. The results revealed that due to the quantum confinement effects, by reducing the diameter of nanowires and nanotubes, the energy gap increases. Zinc oxide semiconductor nanostructures since having direct band gap with size-dependent and quantum confinement effect are recommended as an appropriate candidate for making nanoscale optoelectronic devices.

Antibacterial studies of ZnO nanoparticle coatings on nanocrystalline YSZ irradiated with femtosecond laser light

NASA Astrophysics Data System (ADS)

Alvarez, Crysthal; Garcia, Valeria; Cuando, Natanael; Aguilar, Guillermo

2018-02-01

Recently, efforts have been made to create a transparent ceramic cranial implant comprised of nanocrystalline yttriastabilized zirconia (nc-YSZ) that will provide optical access to the brain. This has been referred to as Window to the Brain (WttB) in the literature. WttB will allow the use of laser and photonic treatments and diagnostics in areas with difficult optical access in the brain. Nevertheless, infection is still one of the frequent cranial implant complications. In most cases a second surgery is required to replace the infected implant. To address potential infections in the WttB platform, we have studied the antibacterial effect of a Zinc Oxide (ZnO) nanoparticles coating on nc-YSZ. After coating with ZnO nanoparticles, the implant was irradiated with infrared femtosecond laser light. We synthesized ZnO nanoparticles through the Laser Ablation of Solids in Liquids (LASL) method, using a Zinc solid target in a liquid medium (water/acetone). Antibacterial coatings were obtained by air brush, using a precursor solution of ZnO nanoparticles in distilled water. Escherichia coli (E. coli) have been used as representative, clinical relevant bacteria to probe the antibacterial effect of the coating. Our previous studies suggested that the use of ZnO nanoparticles inhibit bacterial growth. Laser irradiation treatment alone also offers inhibition of bacterial growth, up to 70%. The incorporation of nanoparticles offers an additional 20% inhibition. Thus, this work represents the next step towards the development of a clinically-oriented transparent cranial implant.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

EDITORIAL: Nanowires for energy Nanowires for energy

NASA Astrophysics Data System (ADS)

LaPierre, Ray; Sunkara, Mahendra

2012-05-01

This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

Growth of antimony doped P-type zinc oxide nanowires for optoelectronics

DOEpatents

Wang, Zhong Lin; Pradel, Ken

2016-09-27

In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.

Semiconductor Nanowires and Nanotubes for Energy Conversion

NASA Astrophysics Data System (ADS)

Fardy, Melissa Anne

Se nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at 300 K. In addition, using a field-effect gated device, the Seebeck coefficient of single PbSe nanowires could be tuned from 64 to 193 muV˙K-1. This direct electrical field control of the electrical conductivity and Seebeck coefficient suggests a powerful strategy for optimizing ZT in thermoelectric devices and these results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve. Recent theoretical work has shown large enhancements in ZT for single-crystal nanowires containing nanoscale interfaces along their lengths. M2O3(ZnO) n ( M = In, Ga, Fe) superlattice nanowires were synthesized via a novel solid-state diffusion approach to investigate this possible enhancement. Using atomic resolution Z-contrast STEM imaging a detailed structural analysis was performed on In2-xGaxO3(ZnO) n nanowires, leading to the discovery that octahedral inclusions within the superlattice structure are likely generated through a defect-assisted process. Single-nanowire thermal and electrical measurements on In2-x GaxO3(ZnO)n reveal a simultaneous improvement in all contributing factors to the thermoelectric figure of merit, giving an order of magnitude enhancement over similar bulk materials at room temperature. This is the first report of enhancement of all three thermoelectric parameters (Seebeck coefficient, electrical conductivity, and thermal resistivity) for a nanowire system. Photoelectrochemical water splitting is another exciting renewable energy application that can

ZnO nanofertilizer and He Ne laser irradiation for promoting growth and yield of sweet basil plant.

PubMed

El-Kereti, Mohammed A; El-feky, Souad A; Khater, Mohammed S; Osman, Yasser A; El-sherbini, El-sayed A

2013-12-01

This study was conducted to evaluate the effectiveness of zinc nanofertilizer strategy on sweet basil yield, through alone application or combined with pre-sowing laser irradiation. Furthermore, evaluate the growth of plant and the level of active essential oil constituents. Zinc oxide (ZnO) nanoparticles (NPs) were synthesized, and transmission electron microscope revealed particle size of approximately 10.5-15.5 nm. ZnO NPs were applied to sweet basil plants by foliar spray at varying concentrations (10, 20 and 30 mg/L); He Ne laser of power 3mW was used for red light irradiation of sweet basil seeds for 2 min. exposure time. Total chlorophyll, total carbohydrate, essential oil levels, zinc content, plant height, branches/plant and fresh weight were measured. In general, the combined foliar spray application of ZnO nanofertilizer with pre-sowing He Ne laser irradiation showed more effectiveness than ZnO nanofertilizer alone and 20mg/L concentration gave the highest results of all measured traits. Statistical analysis (t-test) showed significant differences among the effects of the various concentrations of zinc oxide NPs on these attributes. The results showed an inverse relationship between the total carbohydrate content and the percentage of essential oil in the leaves. Together these findings support the usefulness and effectiveness of zinc oxide nanofertilizer and laser irradiation treatment to enhance the growth and yield of sweet basil plants. The article presents some promising patents on ZnO nanofertilizer and He Ne laser irradiation.

ZnO/ZnSxSe1-x core/shell nanowire arrays as photoelectrodes with efficient visible light absorption

NASA Astrophysics Data System (ADS)

Wang, Zhenxing; Zhan, Xueying; Wang, Yajun; Safdar, Muhammad; Niu, Mutong; Zhang, Jinping; Huang, Ying; He, Jun

2012-08-01

ZnO/ZnSxSe1-x core/shell nanowires have been synthesized on n+-type silicon substrate via a two-step chemical vapor deposition method. Transmission electron microscopy reveals that ZnSxSe1-x can be deposited on the entire surface of ZnO nanowire, forming coaxial heterojunction along ZnO nanowire with very smooth shell surface and high shell thickness uniformity. The photoelectrode after deposition of the ternary alloy shell significantly improves visible light absorption efficiency. Electrochemical impedance spectroscopy results explicitly indicate that the introduction of ZnSxSe1-x shell to ZnO nanowires effectively improves the photogenerated charge separation process. Our finding opens up an efficient means for achieving high efficient energy conversion devices.

Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

NASA Astrophysics Data System (ADS)

Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

2015-11-01

The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

Coupling of semiconductor nanowires with neurons and their interfacial structure.

PubMed

Lee, Ki-Young; Shim, Sojung; Kim, Il-Soo; Oh, Hwangyou; Kim, Sunoh; Ahn, Jae-Pyeong; Park, Seung-Han; Rhim, Hyewhon; Choi, Heon-Jin

2009-12-04

We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

Water- and humidity-enhanced UV detector by using p-type La-doped ZnO nanowires on flexible polyimide substrate.

PubMed

Hsu, Cheng-Liang; Li, Hsieh-Heng; Hsueh, Ting-Jen

2013-11-13

High-density La-doped ZnO nanowires (NWs) were grown hydrothermally on flexible polyimide substrate. The length and diameter of the NWs were around 860 nm and 80-160 nm, respectively. All XRD peaks of the La-doped sample shift to a larger angle. The strong PL peak of the La-doped sample is 380 nm, which is close to the 3.3 eV ZnO bandgap. That PL dominated indicates that the La-doped sample has a great amount of oxygen vacancies. The lattice constants ~0.514 nm of the ZnO:La NW were smaller when measured by HR-TEM. The EDX spectrum determined that the La-doped sample contains approximately 1.27 at % La. The La-doped sample was found to be p-type by Hall Effect measurement. The dark current of the p-ZnO:La NWs decreased with increased relative humidity (RH), while the photocurrent of the p-ZnO:La nanowires increased with increased RH. The higher RH environment was improved that UV response performance. Based on the highest 98% RH, the photocurrent/dark current ratio was around 47.73. The UV response of water drops on the p-ZnO:La NWs was around 2 orders compared to 40% RH. In a water environment, the photocurrent/dark current ratio of p-ZnO:La NWs was 212.1, which is the maximum UV response.

Sponge-Templated Macroporous Graphene Network for Piezoelectric ZnO Nanogenerator.

PubMed

Li, Xinda; Chen, Yi; Kumar, Amit; Mahmoud, Ahmed; Nychka, John A; Chung, Hyun-Joong

2015-09-23

We report a simple approach to fabricate zinc oxide (ZnO) nanowire based electricity generators on three-dimensional (3D) graphene networks by utilizing a commercial polyurethane (PU) sponge as a structural template. Here, a 3D network of graphene oxide is deposited from solution on the template and then is chemically reduced. Following steps of ZnO nanowire growth, polydimethylsiloxane (PDMS) backfilling and electrode lamination completes the fabrication processes. When compared to conventional generators with 2D planar geometry, the sponge template provides a 3D structure that has a potential to increase power density per unit area. The modified one-pot ZnO synthesis method allows the whole process to be inexpensive and environmentally benign. The nanogenerator yields an open circuit voltage of ∼0.5 V and short circuit current density of ∼2 μA/cm(2), while the output was found to be consistent after ∼3000 cycles. Finite element analysis of stress distribution showed that external stress is concentrated to deform ZnO nanowires by orders of magnitude compared to surrounding PU and PDMS, in agreement with our experiment. It is shown that the backfilled PDMS plays a crucial role for the stress concentration, which leads to an efficient electricity generation.

Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.

PubMed

Fang, Xuan; Wei, Zhipeng; Yang, Yahui; Chen, Rui; Li, Yongfeng; Tang, Jilong; Fang, Dan; Jia, Huimin; Wang, Dengkui; Fan, Jie; Ma, Xiaohui; Yao, Bin; Wang, Xiaohua

2016-01-27

We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.

Analysis of ultraviolet photo-response of ZnO nanostructures prepared by electrodeposition and atomic layer deposition

NASA Astrophysics Data System (ADS)

Makhlouf, Houssin; Karam, Chantal; Lamouchi, Amina; Tingry, Sophie; Miele, Philippe; Habchi, Roland; Chtourou, Radhouane; Bechelany, Mikhael

2018-06-01

In this work, ZnO nanowires (ZnO NWs) and urchin-like ZnO nanowires (U-ZnO NWs) based on self-assembled ordered polystyrene sphere (PS) were successfully prepared by combining atomic layer deposition (ALD) and electrochemical deposition (ECD) processes to build UV photosensors. The photo-response of the prepared samples was investigated and compared. The growth of the nanowires on self-assembled, ordered PS introduces a significant modification on the morphology, crystal orientation and grain size of U-ZnO NWs compared to randomly, vertically aligned ZnO NWs, and therefore improves the photo-response of U-ZnO NWs. The photocurrent may be produced by either a surface or bulk-related process. For ZnO NW-based photosensors, the photocurrent was monitored by a surface related process, whereas, it was mainly governed by a bulk related process for U-ZnO NWs, resulting in a higher and faster photo-response. The study of the rise and decay time constants for both materials showed that these parameters were strikingly sensitive to the optical properties.

Large-area fabrication of patterned ZnO-nanowire arrays using light stamping lithography.

PubMed

Hwang, Jae K; Cho, Sangho; Seo, Eun K; Myoung, Jae M; Sung, Myung M

2009-12-01

We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly(dimethylsiloxane) (PDMS) thin layers with (aminopropyl)siloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. (3-Aminopropyl)triethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnO-nanowire arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4-in. Si wafers.

Effect of advanced nanowire-based targets in nanosecond laser-matter interaction (invited)

NASA Astrophysics Data System (ADS)

Lanzalone, G.; Altana, C.; Mascali, D.; Muoio, A.; Malferrari, L.; Odorici, F.; Malandrino, G.; Tudisco, S.

2016-02-01

An experimental campaign aiming to investigate the effects of innovative nanostructured targets based on Ag nanowires on laser energy absorption in the ns time domain has been carried out at the Laser Energy for Nuclear Science laboratory of INFN-LNS in Catania. The tested targets were realized at INFN-Bologna by anodizing aluminium sheets in order to obtain layers of porous Al2O3 of different thicknesses, on which nanowires of various metals are grown by electro-deposition with different heights. Targets were then irradiated by using a Nd:YAG laser at different pumping energies. Advanced diagnostic tools were used for characterizing the plasma plume and ion production. As compared with targets of pure Al, a huge enhancement (of almost two order of magnitude) of the X-ray flux emitted by the plasma has been observed when using the nanostructured targets, with a corresponding decrease of the "optical range" signal, pointing out that the energetic content of the laser produced plasma was remarkably increased. This analysis was furthermore confirmed from time-of-flight spectra.

Effect of advanced nanowire-based targets in nanosecond laser-matter interaction (invited).

PubMed

Lanzalone, G; Altana, C; Mascali, D; Muoio, A; Malferrari, L; Odorici, F; Malandrino, G; Tudisco, S

2016-02-01

An experimental campaign aiming to investigate the effects of innovative nanostructured targets based on Ag nanowires on laser energy absorption in the ns time domain has been carried out at the Laser Energy for Nuclear Science laboratory of INFN-LNS in Catania. The tested targets were realized at INFN-Bologna by anodizing aluminium sheets in order to obtain layers of porous Al2O3 of different thicknesses, on which nanowires of various metals are grown by electro-deposition with different heights. Targets were then irradiated by using a Nd:YAG laser at different pumping energies. Advanced diagnostic tools were used for characterizing the plasma plume and ion production. As compared with targets of pure Al, a huge enhancement (of almost two order of magnitude) of the X-ray flux emitted by the plasma has been observed when using the nanostructured targets, with a corresponding decrease of the "optical range" signal, pointing out that the energetic content of the laser produced plasma was remarkably increased. This analysis was furthermore confirmed from time-of-flight spectra.

Effect of advanced nanowire-based targets in nanosecond laser-matter interaction (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lanzalone, G., E-mail: Gaetano.Lanzalone@ct.infn.it; Università degli Studi di Enna “Kore,” Via delle Olimpiadi, 94100 Enna; Altana, C.

2016-02-15

An experimental campaign aiming to investigate the effects of innovative nanostructured targets based on Ag nanowires on laser energy absorption in the ns time domain has been carried out at the Laser Energy for Nuclear Science laboratory of INFN-LNS in Catania. The tested targets were realized at INFN-Bologna by anodizing aluminium sheets in order to obtain layers of porous Al{sub 2}O{sub 3} of different thicknesses, on which nanowires of various metals are grown by electro-deposition with different heights. Targets were then irradiated by using a Nd:YAG laser at different pumping energies. Advanced diagnostic tools were used for characterizing the plasmamore » plume and ion production. As compared with targets of pure Al, a huge enhancement (of almost two order of magnitude) of the X-ray flux emitted by the plasma has been observed when using the nanostructured targets, with a corresponding decrease of the “optical range” signal, pointing out that the energetic content of the laser produced plasma was remarkably increased. This analysis was furthermore confirmed from time-of-flight spectra.« less

Fluorinated copper phthalocyanine nanowires for enhancing interfacial electron transport in organic solar cells.

PubMed

Yoon, Seok Min; Lou, Sylvia J; Loser, Stephen; Smith, Jeremy; Chen, Lin X; Facchetti, Antonio; Marks, Tobin J; Marks, Tobin

2012-12-12

Zinc oxide is a promising candidate as an interfacial layer (IFL) in inverted organic photovoltaic (OPV) cells due to the n-type semiconducting properties as well as chemical and environmental stability. Such ZnO layers collect electrons at the transparent electrode, typically indium tin oxide (ITO). However, the significant resistivity of ZnO IFLs and an energetic mismatch between the ZnO and the ITO layers hinder optimum charge collection. Here we report that inserting nanoscopic copper hexadecafluorophthalocyanine (F(16)CuPc) layers, as thin films or nanowires, between the ITO anode and the ZnO IFL increases OPV performance by enhancing interfacial electron transport. In inverted P3HT:PC(61)BM cells, insertion of F(16)CuPc nanowires increases the short circuit current density (J(sc)) versus cells with only ZnO layers, yielding an enhanced power conversion efficiency (PCE) of ∼3.6% vs ∼3.0% for a control without the nanowire layer. Similar effects are observed for inverted PTB7:PC(71)BM cells where the PCE is increased from 8.1% to 8.6%. X-ray scattering, optical, and electrical measurements indicate that the performance enhancement is ascribable to both favorable alignment of the nanowire π-π stacking axes parallel to the photocurrent flow and to the increased interfacial layer-active layer contact area. These findings identify a promising strategy to enhance inverted OPV performance by inserting anisotropic nanostructures with π-π stacking aligned in the photocurrent flow direction.

Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryu, Sang-gil; Kim, Eunpa; Grigoropoulos, Costas P., E-mail: cgrigoro@berkeley.edu

2016-08-15

We investigate the early stage of silicon nanowire growth by the vapor-liquid-solid mechanism using laser-localized heating combined with ex-situ chemical mapping analysis by energy-filtered transmission electron microscopy. By achieving fast heating and cooling times, we can precisely determine the nucleation times for nanowire growth. We find that the silicon nanowire nucleation process occurs on a time scale of ∼10 ms, i.e., orders of magnitude faster than the times reported in investigations using furnace processes. The rate-limiting step for silicon nanowire growth at temperatures in the vicinity of the eutectic temperature is found to be the gas reaction and/or the silicon crystalmore » growth process, whereas at higher temperatures it is the rate of silicon diffusion through the molten catalyst that dictates the nucleation kinetics.« less

Preparation of nanowire specimens for laser-assisted atom probe tomography

NASA Astrophysics Data System (ADS)

Blumtritt, H.; Isheim, D.; Senz, S.; Seidman, D. N.; Moutanabbir, O.

2014-10-01

The availability of reliable and well-engineered commercial instruments and data analysis software has led to development in recent years of robust and ergonomic atom-probe tomographs. Indeed, atom-probe tomography (APT) is now being applied to a broader range of materials classes that involve highly important scientific and technological problems in materials science and engineering. Dual-beam focused-ion beam microscopy and its application to the fabrication of APT microtip specimens have dramatically improved the ability to probe a variety of systems. However, the sample preparation is still challenging especially for emerging nanomaterials such as epitaxial nanowires which typically grow vertically on a substrate through metal-catalyzed vapor phase epitaxy. The size, morphology, density, and sensitivity to radiation damage are the most influential parameters in the preparation of nanowire specimens for APT. In this paper, we describe a step-by-step process methodology to allow a precisely controlled, damage-free transfer of individual, short silicon nanowires onto atom probe microposts. Starting with a dense array of tiny nanowires and using focused ion beam, we employed a sequence of protective layers and markers to identify the nanowire to be transferred and probed while protecting it against Ga ions during lift-off processing and tip sharpening. Based on this approach, high-quality three-dimensional atom-by-atom maps of single aluminum-catalyzed silicon nanowires are obtained using a highly focused ultraviolet laser-assisted local electrode atom probe tomograph.

Nanosecond laser switching of surface wettability and epitaxial integration of c-axis ZnO thin films with Si(111) substrates.

PubMed

Molaei, R; Bayati, M R; Alipour, H M; Estrich, N A; Narayan, J

2014-01-08

We have achieved integration of polar ZnO[0001] epitaxial thin films with Si(111) substrates where cubic yttria-stabilized zirconia (c-YSZ) was used as a template on a Si(111) substrate. Using XRD (θ-2θ and φ scans) and HRTEM techniques, the epitaxial relationship between the ZnO and the c-YSZ layers was shown to be [0001]ZnO || [111]YSZ and [21¯1¯0]ZnO || [1¯01](c-YSZ), where the [21¯1¯0] direction lies in the (0001) plane, and the [1¯01] direction lies in the (111) plane. Similar studies on the c-YSZ/Si interface revealed epitaxy as (111)YSZ || (111)Si and in-plane (110)YSZ || (110)Si. HRTEM micrographs revealed atomically sharp and crystallographically continuous interfaces. The ZnO epilayers were subsequently laser annealed by a single pulse of a nanosecond excimer KrF laser. It was shown that the hydrophobic behavior of the pristine sample became hydrophilic after laser treatment. XPS was employed to study the effect of laser treatment on surface stoichiometry of the ZnO epilayers. The results revealed the formation of oxygen vacancies, which are envisaged to control the observed hydrophilic behavior. Our AFM studies showed surface smoothing due to the coupling of the high energy laser beam with the surface. The importance of integration of c-axis ZnO with Si(111) substrates is emphasized using the paradigm of domain matching epitaxy on the c-YSZ[111] buffer platform along with their out-of-plane orientation, which leads to improvement of the performance of the solid-state devices. The observed ultrafast response and switching in photochemical characteristics provide new opportunities for application of ZnO in smart catalysts, sensors, membranes, DNA self-assembly and multifunctional devices.

A Two-Dimensional Ruddlesden-Popper Perovskite Nanowire Laser Array based on Ultrafast Light-Harvesting Quantum Wells.

PubMed

Zhang, Haihua; Wu, Yishi; Liao, Qing; Zhang, Zhaoyi; Liu, Yanping; Gao, Qinggang; Liu, Peng; Li, Meili; Yao, Jiannian; Fu, Hongbing

2018-06-25

Miniaturized nanowire nanolasers of 3D perovskites feature a high gain coefficient; however, room-temperature optical gain and nanowire lasers from 2D layered perovskites have not been reported to date. A biomimetic approach is presented to construct an artificial ligh-harvesting system in mixed multiple quantum wells (QWs) of 2D-RPPs of (BA) 2 (FA) n-1 Pb n Br 3n+1 , achieving room-temperature ASE and nanowire (NW) lasing. Owing to the improvement of flexible and deformable characteristics provided by organic BA cation layers, high-density large-area NW laser arrays were fabricated with high photostability. Well-controlled dimensions and uniform geometries enabled 2D-RPPs NWs functioning as high-quality Fabry-Perot (FP) lasers with almost identical optical modes, high quality (Q) factor (ca. 1800), and similarly low lasing thresholds. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Glucose biosensor based on functionalized ZnO nanowire/graphite films dispersed on a Pt electrode

NASA Astrophysics Data System (ADS)

Gallay, P.; Tosi, E.; Madrid, R.; Tirado, M.; Comedi, D.

2016-10-01

We present a glucose biosensor based on ZnO nanowire self-sustained films grown on compacted graphite flakes by the vapor transport method. Nanowire/graphite films were fragmented in water, filtered to form a colloidal suspension, subsequently functionalized with glucose oxidase and finally transferred to a metal electrode (Pt). The obtained devices were evaluated using scanning electron microscopy, energy-dispersive x-ray spectroscopy, cyclic voltammetry and chronoamperometry. The electrochemical responses of the devices were determined in buffer solutions with successive glucose aggregates using a tripolar electrode system. The nanostructured biosensors showed excellent analytical performance, with linear response to glucose concentrations, high sensitivity of up to ≈17 μA cm-2 mM-1 in the 0.03-1.52 mM glucose concentration range, relatively low Michaelis-Menten constant, excellent reproducibility and a fast response. The detection limits are more than an order of magnitude lower than those achievable in commercial biosensors for glucose control, which is promising for the development of glucose monitoring methods that do not require blood extraction from potentially diabetic patients. The strong detection enhancements provided by the functionalized nanostructures are much larger than the electrode surface-area increase and are discussed in terms of the physical and chemical mechanisms involved in the detection and transduction processes.

Large-scale fabrication of vertically aligned ZnO nanowire arrays

DOEpatents

Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

2013-02-05

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

Volumetric Heating of Ultra-High Energy Density Relativistic Plasmas by Ultrafast Laser Irradiation of Aligned Nanowire Arrays

NASA Astrophysics Data System (ADS)

Bargsten, Clayton; Hollinger, Reed; Shlyaptsev, Vyacheslav; Pukhov, Alexander; Keiss, David; Townsend, Amanda; Wang, Yong; Wang, Shoujun; Prieto, Amy; Rocca, Jorge

2014-10-01

We have demonstrated the volumetric heating of near-solid density plasmas to keV temperatures by ultra-high contrast femtosecond laser irradiation of arrays of vertically aligned nanowires with an average density up to 30% solid density. X-ray spectra show that irradiation of Ni and Au nanowire arrays with laser pulses of relativistic intensities ionizes plasma volumes several micrometers in depth to the He-like and Co-like (Au 52 +) stages respectively. The penetration depth of the heat into the nanowire array was measured monitoring He-like Co lines from irradiated arrays in which the nanowires are composed of a Co segment buried under a selected length of Ni. The measurement shows the ionization reaches He-like Co for depth of up to 5 μm within the target. This volumetric plasma heating approach creates a new laboratory plasma regime in which extreme plasma parameters can be accessed with table-top lasers. Scaling to higher laser intensities promises to create plasmas with temperatures and pressures approaching those in the center of the sun. Work supported by the U.S Department of Energy, Fusion Energy Sciences and the Defense Threat Reduction Agency grant HDTRA-1-10-1-0079. A.P was supported by of DFG-funded project TR18.

Taheri-Saramad x-ray detector (TSXD): a novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane.

PubMed

Taheri, A; Saramad, S; Ghalenoei, S; Setayeshi, S

2014-01-01

A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

Plasmonic Behavior of Ag/Dielectric Nanowires and the Effect of Geometry

DTIC Science & Technology

2009-07-01

in- cluding random Ga2O3 nanowires, ZnO nanowires, as well as Au lines produced by e-beam lithography. The growth of the Ga2O3 nanowires was achieved...PLASMONIC PROPERTIES As discussed above, we have developed a SERS substrate, consisting of Ga2O3 nanowire core/Ag metal sheath nano- structures, which have...signal. As is evident, the nanowire composites are about two orders of magnitude more sensitive than the Mesophotonics substrate. Since these Ga2O3 /Ag

Transformation of silver nanowires into nanoparticles by Rayleigh instability: Comparison between laser irradiation and heat treatment

NASA Astrophysics Data System (ADS)

Oh, Harim; Lee, Jeeyoung; Lee, Myeongkyu

2018-01-01

We comparatively study the morphological evolutions of silver nanowires under nanosecond-pulsed laser irradiation and thermal treatment in ambient air. While single-crystalline, pure Ag nanospheres could be produced by laser-driven Rayleigh instability, the particles produced by heat treatment were subject to oxidation and exhibited polyhedron shapes. The different results are attributed to the significantly different time scales of the two processes. In this article, we also show that bimetallic Ag-Au nanospheres can be synthesized by irradiating Ag nanowires coated with a thin Au film using a pulsed laser beam. This may provide a facile route to tune the plasmonic behavior of metal nanoparticles.

Origin of magnetic properties in carbon implanted ZnO nanowires.

PubMed

Wang, Y F; Shao, Y C; Hsieh, S H; Chang, Y K; Yeh, P H; Hsueh, H C; Chiou, J W; Wang, H T; Ray, S C; Tsai, H M; Pao, C W; Chen, C H; Lin, H J; Lee, J F; Wu, C T; Wu, J J; Chang, Y M; Asokan, K; Chae, K H; Ohigashi, T; Takagi, Y; Yokoyama, T; Kosugi, N; Pong, W F

2018-05-17

Various synchrotron radiation-based spectroscopic and microscopic techniques are used to elucidate the room-temperature ferromagnetism of carbon-doped ZnO-nanowires (ZnO-C:NW) via a mild C + ion implantation method. The photoluminescence and magnetic hysteresis loops reveal that the implantation of C reduces the number of intrinsic surface defects and increases the saturated magnetization of ZnO-NW. The interstitial implanted C ions constitute the majority of defects in ZnO-C:NW as confirmed by the X-ray absorption spectroscopic studies. The X-ray magnetic circular dichroism spectra of O and C K-edge respectively indicate there is a reduction in the number of unpaired/dangling O 2p bonds in the surface region of ZnO-C:NW and the C 2p-derived states of the implanted C ions strongly affect the net spin polarization in the surface and bulk regions of ZnO-C:NW. Furthermore, these findings corroborate well with the first-principles calculations of C-implanted ZnO in surface and bulk regions, which highlight the stability of implanted C for the suppression and enhancement of the ferromagnetism of the ZnO-C:NW in the surface region and bulk phase, respectively.

Sulfur-Doped Zinc Oxide (ZnO) Nanostars: Synthesis and Simulation of Growth Mechanism

DTIC Science & Technology

2011-10-01

Zinc Oxide ( ZnO ) Nanostars: Synthesis and Simulation of Growth Mechanism Jinhyun Cho1, Qiubao Lin2,3, Sungwoo...characterization, and ab initio simulations of star-shaped hexagonal zinc oxide ( ZnO ) nanowires. The ZnO nanostructures were synthesized by a low...Introduction Zinc oxide ( ZnO ) is a wide bandgap (3.37 eV), Ⅱ–Ⅵ semiconductor of great interest for optoelectronic applications [1–3]. Its

Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

PubMed

Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

2016-08-10

Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1).

High-speed observation of ZnO microspherical crystals produced by laser ablation (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nakamura, Daisuke; Tasaki, Ryohei; Fujiwara, Yuki; Nagasaki, Fumiaki; Higashihata, Mitsuhiro; Ikenoue, Hiroshi; Okada, Tatsuo

2017-03-01

ZnO nano/microstructures have attracted much attention as building blocks for optoelectronic devices because of their high crystalline quality and unique structures. We have succeeded in synthesizing ZnO microspherical crystals by a simple atmospheric laser ablation method, and demonstrated ultraviolet whispering-gallery-mode lasing from the spheres. In the microsphere synthesis process, molten droplets formed into spherical shapes by surface tension, and crystalized during ejection from the ablation spot. In this study, we observed the generation of ZnO microspheres by high-speed camera. Now we are trying to control and manipulate the microspheres using a vortex beam.

Fast plasmonic laser nanowelding for a Cu-nanowire percolation network for flexible transparent conductors and stretchable electronics.

PubMed

Han, Seungyong; Hong, Sukjoon; Ham, Jooyeun; Yeo, Junyeob; Lee, Jinhwan; Kang, Bongchul; Lee, Phillip; Kwon, Jinhyeong; Lee, Seung S; Yang, Min-Yang; Ko, Seung Hwan

2014-09-03

A facile fast laser nanoscale welding process uses the plasmonic effect at a nanowire (NW) junction to suppress oxidation and successfully fabricate a Cu-NW-based percolation-network conductor. The "nanowelding" process does not require an inert or vacuum environment. Due to the low-temperature and fast-process nature, plasmonic laser nanowelding may form Cu-nanowire networks on heat-sensitive, flexible or even stretchable substrates. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-photon excited coherent random laser emission in ZnO powders

NASA Astrophysics Data System (ADS)

Tolentino Dominguez, Christian; Gomes, Maria De A.; Macedo, Zélia S.; de Araújo, Cid B.; Gomes, Anderson S. L.

2014-11-01

We report the observation and analysis of anti-Stokes coherent random laser (RL) emission from zinc oxide (ZnO) powders excited by one-, two- or three-photon femtosecond laser radiation. The ZnO powders were produced via a novel proteic sol-gel, low-cost and environmentally friendly route using coconut water in the polymerization step of the metal precursor. One- and two-photon excitation at 354 nm and 710 nm, respectively, generated single-band emissions centred at about 387 nm. For three-photon excitation, the emission spectra showed a strong ultraviolet (UV) band (380-396 nm) attributed to direct three-photon absorption from the valence band to the conduction band. The presence of an intensity threshold and a bandwidth narrowing of the UV band from about 20 to 4 nm are clear evidence of RL action. The observation of multiple sub-nanometre narrow peaks in the emission spectra for excitation above the RL threshold is consistent with random lasing by coherent feedback.

Layer-by-layer-assembled quantum dot multilayer sensitizers: how the number of layers affects the photovoltaic properties of one-dimensional ZnO nanowire electrodes.

PubMed

Jin, Ho; Choi, Sukyung; Lim, Sang-Hoon; Rhee, Shi-Woo; Lee, Hyo Joong; Kim, Sungjee

2014-01-13

Layer cake: Multilayered CdSe quantum dot (QD) sensitizers are layer-by-layer assembled onto ZnO nanowires by making use of electrostatic interactions to study the effect of the layer number on the photovoltaic properties. The photovoltaic performance of QD-sensitized solar cells critically depends on this number as a result of the balance between light-harvesting efficiency and carrier-recombination probability. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Quality In-Plane Aligned CsPbX3 Perovskite Nanowire Lasers with Composition-Dependent Strong Exciton-Photon Coupling.

PubMed

Wang, Xiaoxia; Shoaib, Muhammad; Wang, Xiao; Zhang, Xuehong; He, Mai; Luo, Ziyu; Zheng, Weihao; Li, Honglai; Yang, Tiefeng; Zhu, Xiaoli; Ma, Libo; Pan, Anlian

2018-06-14

Cesium lead halide perovskite nanowires have emerged as promising low-dimensional semiconductor structures for integrated photonic applications. Understanding light-matter interactions in a nanowire cavity is of both fundamental and practical interest in designing low-power-consumption nanoscale light sources. In this work, high-quality in-plane aligned halide perovskite CsPbX 3 (X = Cl, Br, I) nanowires are synthesized by a vapor growth method on an annealed M-plane sapphire substrate. Large-area nanowire laser arrays have been achieved based on the as-grown aligned CsPbX 3 nanowires at room temperature with quite low pumping thresholds, very high quality factors, and a high degree of linear polarization. More importantly, it is found that exciton-polaritons are formed in the nanowires under the excitation of a pulsed laser, indicating a strong exciton-photon coupling in the optical microcavities made of cesium lead halide perovskites. The coupling strength in these CsPbX 3 nanowires is dependent on the atomic composition, where the obtained room-temperature Rabi splitting energy is ∼210 ± 13, 146 ± 9, and 103 ± 5 meV for the CsPbCl 3 , CsPbBr 3 , and CsPbI 3 nanowires, respectively. This work provides fundamental insights for the practical applications of all-inorganic perovskite CsPbX 3 nanowires in designing light-emitting devices and integrated nanophotonic systems.

An investigation into the role of polyethyleneimine in chemical bath deposition of zinc oxide nanowires

NASA Astrophysics Data System (ADS)

Eskandari, Alireza; Abdizadeh, Hossein; Pourshaban, Erfan; Golobostanfard, Mohammad Reza

2018-01-01

Zinc oxide nanowires are considered as promising materials for wide range of optoelectrical and chemical devices, thanks to their desirable structural and optoelectrical properties. Over the past decade, chemical bath deposition (CBD) has been widely used to synthesize these nanostructures due to its low cost and controllability. Since improving the aspect ratio and length of nanowires is a vital issue in growing one-dimensional nanostructures, the influence of polyethyleneimine (PEI) as a complexing and chelating agent on the structural, morphological, and optoelectrical properties of ZnO nanowires has been studied in this report. As-grown ZnO nanowires synthesized by mixing deionized water, zinc acetate dihydrate, hexamethylenetetramine, and PEI were characterized with field emission scanning electron microscope (FESEM), X-ray diffractometer (XRD), and photoluminescence spectroscopy (PL). FESEM results unambiguously show that increasing PEI concentration (from 0 to 0.2 g in 50 ml DI water) reduces the diameter and density of nanowires from ˜120 to 56 nm and from ˜85% to 65%, respectively. Interestingly, although adding more PEI decreases nanowires diameter, over-increasing of PEI brings about an inappropriate nanostructures growth. Moreover, XRD patterns demonstrate that all the samples have wurtzite structure with a preferred orientation along c-axis which may be improved or deteriorated by adding PEI into the chemical bath. Accordingly, it is crucial to optimize the amount of PEI in CBD method. Near-band edge (NBE) region in PL spectrum also confirms wide bandgap of ZnO (˜3.3 eV). In addition, comparing the appearance of PEI free with PEI assisted solutions show a considerable difference in their colors, which may be attributed to the formation of new chemical compounds. Considering these results, PEI plays a couple of determining roles in synthesizing ZnO nanowires; making nanowires thinner, with selectively absorption to the non-polar, lateral facets of

Effect of aging on ZnO and nitrogen doped P-Type ZnO

NASA Astrophysics Data System (ADS)

Majumdar, Sayanee; Bhunia, S.

2012-06-01

The withholding of p-type conductivity in as-prepared and 3% nitrogen (N) doped zinc oxide (ZnO) even after 2 months of preparation was systematically studied. The films were grown on glass substrates by pulsed laser deposition (PLD) at 350 °C under different conditions, viz. under vacuum and at oxygen (O) ambience using 2000 laser pulses. In O ambience for as-prepared ZnO the carrier concentration reduces and mobility increases with increasing number of laser shots. The resistivity of as-prepared and 3% N-doped ZnO is found to increase with reduction in hole concentration after 60 days of aging while maintaining its p-type conductivity irrespective of growth condition. AFM and electrical properties showed aging effect on the doped and undoped samples. For as-prepared ZnO, with time, O migration makes the film high resistive by reducing free electron concentrations. But for N-doped p-type ZnO, O-migration, metastable N and hydrogen atom present in the source induced instability in structure makes it less conducting p-type.

ZnO Nanostructures for Tissue Engineering Applications

PubMed Central

Laurenti, Marco; Cauda, Valentina

2017-01-01

This review focuses on the most recent applications of zinc oxide (ZnO) nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair. PMID:29113133

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

NASA Astrophysics Data System (ADS)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Optimization of dielectric matrix for ZnO nanowire based nanogenerators

NASA Astrophysics Data System (ADS)

Kannan, Santhosh; Parmar, Mitesh; Tao, Ran; Ardila, Gustavo; Mouis, Mireille

2016-11-01

This paper reports the role of selection of suitable dielectric layer in nanogenerator (NG) structure and its influence on the output performance. The basic NG structure is a composite material integrating hydrothermally grown vertical piezoelectric zinc oxide (ZnO) nanowires (NWs) into a dielectric matrix. To accomplish this study, three materials - poly methyl methacrylate (PMMA), silicon nitride (Si3N4) and aluminium oxide (Al2O3) are selected, processed and used as matrix dielectric in NGs. Scanning electron microscopy (SEM) analysis shows the well-aligned NWs with a diameter of 200±50 nm and length of 3.5±0.3 μm. This was followed by dielectric material deposition as a matrix material. After fabricating NG devices, the output generated voltage under manual and automatic bending were recorded, observed and analyzed for the selection of the best dielectric material to obtain an optimum output. The maximum peak-to-peak open-circuit voltage output for PMMA, Si3N4 and Al2O3 under manual bending was recorded as approximately 880 mV, 1.2 V and 2.1 V respectively. These preliminary results confirm the predicted effect of using more rigid dielectrics as matrix material for the NGs. The generated voltage is increased by about 70% using Si3N4 or Al2O3, instead of a less rigid material as PMMA.

Interfacial engineering of CuO nanorod/ZnO nanowire hybrid nanostructure photoanode in dye-sensitized solar cell

NASA Astrophysics Data System (ADS)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Gur, Emre; Kocak, Yusuf

2018-01-01

Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires' layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm2 under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.

Metal Oxide Nanowire Preparation and Their Integration into Chemical Sensing Devices at the SENSOR Lab in Brescia

PubMed Central

Bertuna, Angela; Faglia, Guido; Ferroni, Matteo; Kaur, Navpreet; Munasinghe Arachchige, Hashitha M. M.; Sberveglieri, Giorgio; Comini, Elisabetta

2017-01-01

Metal oxide 1D nanowires are probably the most promising structures to develop cheap stable and selective chemical sensors. The purpose of this contribution is to review almost two-decades of research activity at the Sensor Lab Brescia on their preparation during by vapor solid (n-type In2O3, ZnO), vapor liquid solid (n-type SnO2 and p-type NiO) and thermal evaporation and oxidation (n-type ZnO, WO3 and p-type CuO) methods. For each material we’ve assessed the chemical sensing performance in relation to the preparation conditions and established a rank in the detection of environmental and industrial pollutants: SnO2 nanowires were effective in DMMP detection, ZnO nanowires in NO2, acetone and ethanol detection, WO3 for ammonia and CuO for ozone. PMID:28468310

Piezoelectric and optoelectronic properties of electrospinning hybrid PVDF and ZnO nanofibers

NASA Astrophysics Data System (ADS)

Ma, Jian; Zhang, Qian; Lin, Kabin; Zhou, Lei; Ni, Zhonghua

2018-03-01

Polyvinylidene fluoride (PVDF) is a unique ferroelectric polymer with significant promise for energy harvesting, data storage, and sensing applications. ZnO is a wide direct band gap semiconductor (3.37 eV), commonly used as ultraviolet photodetectors, nanoelectronics, photonicsand piezoelectric generators. In this study, we produced high output piezoelectric energy harvesting materials using hybrid PVDF/ZnO nanofibers deposited via electrospinning. The strong electric fields and stretching forces during the electrospinning process helps to align dipoles in the nanofiber crystal such that the nonpolar α-phase (random orientation of dipoles) is transformed into polar β-phase in produced nanofibers. The effect of the additional ZnO nanowires on the nanofiber β-phase composition and output voltage are investigated. The maximum output voltage generated by a single hybrid PVDF and ZnO nanofiber (33 wt% ZnO nanowires) is over 300% of the voltage produced by a single nanofiber made of pure PVDF. The ZnO NWs served not only as a piezoelectric material, but also as a semiconducting material. The electrical conductivity of the hybrid PVDF/ZnO nanofibers increased by more than a factor of 4 when exposed under ultraviolet (UV) light.

CdS/CdSe quantum dot shell decorated vertical ZnO nanowire arrays by spin-coating-based SILAR for photoelectrochemical cells and quantum-dot-sensitized solar cells.

PubMed

Zhang, Ran; Luo, Qiu-Ping; Chen, Hong-Yan; Yu, Xiao-Yun; Kuang, Dai-Bin; Su, Cheng-Yong

2012-04-23

A CdS/CdSe composite shell is assembled onto the surface of ZnO nanowire arrays with a simple spin-coating-based successive ionic layer adsorption and reaction method. The as-prepared photoelectrode exhibit a high photocurrent density in photoelectrochemical cells and also generates good power conversion efficiency in quantum-dot-sensitized solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of room temperature UV emission of ZnO films with different defect densities induced by laser irradiation.

PubMed

Zhao, Yan; Jiang, Yijian

2010-08-01

We studied the room temperature UV emission of ZnO films with different defect densities which is fabricated by KrF laser irradiation process. It is shown room temperature UV photoluminescence of ZnO film is composed of contribution from free-exciton (FX) recombination and its longitudinal-optical phonon replica (FX-LO) (1LO, 2LO). With increase of the defect density, the FX emission decreased and FX-LO emission increased dramatically; and the relative strengths of FX to FX-LO emission intensities determine the peak position and intensity of UV emission. What is more, laser irradiation with moderate energy density could induce the crystalline ZnO film with very flat and smooth surface. This investigation indicates that KrF laser irradiation could effectively modulate the exciton emission and surface morphology, which is important for the application of high performance of UV emitting optoelectronic devices. Copyright 2010 Elsevier B.V. All rights reserved.

Spontaneous polarization induced electric field in zinc oxide nanowires and nanostars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, S., E-mail: sfarid3@uic.edu; Choi, M.; Datta, D.

We report on the detection mechanism of spontaneous polarization using electrostatic force microscopy in zinc oxide nanowires and nanostars grown by vapor-liquid-solid technique. Optical and structural properties are investigated in detail to understand the complex ZnO nanostructures comprehensively. Calculations are carried out to estimate the electric field from the change in interleave amplitude induced by the electrostatic force due to the spontaneous polarization effects. Attraction of the probe between the tip and the sample varies for different structures with a stronger attraction for nanostars as compared to nanowires. Strength of electric field is dependent on the orientation of nanowires andmore » nanostars c-axis with measured magnitude of electric field to be ∼10{sup 7 }V/m and 10{sup 8 }V/m respectively. This technique presents a unique detection mechanism of built-in spontaneous polarization and electric field from polar ZnO nanowires with applications in voltage gated ion channels, nano-bio interfaces, optoelectronic and photonic devices.« less

The effects of Nd2O3 concentration in the laser emission of TeO2-ZnO glasses

NASA Astrophysics Data System (ADS)

Moreira, L. M.; Anjos, V.; Bell, M. J. V.; Ramos, C. A. R.; Kassab, L. R. P.; Doualan, D. J. L.; Camy, P.; Moncorgé, R.

2016-08-01

The present work reports the modification introduced by different Nd2O3 concentration on optical properties and the laser operation of Nd3+ doped (TeO2-ZnO) bulk tellurite glass. The spectroscopic data are analyzed within the Judd Ofelt formalism framework and the results are compared to the fluorescence lifetime and emission measurements to derive values for the quantum efficiency and the stimulated emission cross section of the considered 4F3/2 → 4I11/2 infrared laser transition around 1062.5 nm. Continuous-wave laser action is achieved with this bulk tellurite glass by pumping the sample inside a standard plan-concave mirror laser cavity with different output couplers. It is possible to observe coherent emission only for the lower concentration (0.5%(wt.) of Nd2 O3). Also laser action could only be observed for this sample with threshold pump power of 73 mW associated with a laser slope efficiency of 8% for an output coupler transmission of 4% indicating that TeO2-ZnO are potential materials for laser action. The results presented in this work together with those previously reported with higher concentration (1.0% (wt) of Nd2O3) determine the adequate Nd2O3 concentration for laser action and guide the correct experimental procedure for TeO2-ZnO glasses preparation.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Defect studies of thin ZnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Vlček, M.; Čížek, J.; Procházka, I.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Mosnier, J.-P.

2014-04-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Detecting Liquefied Petroleum Gas (LPG) at Room Temperature Using ZnSnO3/ZnO Nanowire Piezo-Nanogenerator as Self-Powered Gas Sensor.

PubMed

Fu, Yongming; Nie, Yuxin; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

2015-05-20

High sensitivity, selectivity, and reliability have been achieved from ZnSnO3/ZnO nanowire (NW) piezo-nanogenerator (NG) as self-powered gas sensor (SPGS) for detecting liquefied petroleum gas (LPG) at room temperature (RT). After being exposed to 8000 ppm LPG, the output piezo-voltage of ZnSnO3/ZnO NW SPGS under compressive deformation is 0.089 V, much smaller than that in air ambience (0.533 V). The sensitivity of the SPGS against 8000 ppm LPG is up to 83.23, and the low limit of detection is 600 ppm. The SPGS has lower sensitivity against H2S, H2, ethanol, methanol and saturated water vapor than LPG, indicating good selectivity for detecting LPG. After two months, the decline of the sensing performance is less than 6%. Such piezo-LPG sensing at RT can be ascribed to the new piezo-surface coupling effect of ZnSnO3/ZnO nanocomposites. The practical application of the device driven by human motion has also been simply demonstrated. This work provides a novel approach to fabricate RT-LPG sensors and promotes the development of self-powered sensing system.

Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

NASA Astrophysics Data System (ADS)

Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

2013-03-01

In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

The clash of mechanical and electrical size-effects in ZnO nanowires and a double power law approach to elastic strain engineering of piezoelectric and piezotronic devices.

PubMed

Rinaldi, Antonio; Araneo, Rodolfo; Celozzi, Salvatore; Pea, Marialilia; Notargiacomo, Andrea

2014-09-10

The piezoelectric performance of ultra-strength ZnO nanowires (NWs) depends on the subtle interplay between electrical and mechanical size-effects. "Size-dependent" modeling of compressed NWs illustrates why experimentally observed mechanical stiffening can indeed collide with electrical size-effects when the size shrinks, thereby lowering the actual piezoelectric function from bulk estimates. "Smaller" is not necessarily "better" in nanotechnology. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Assessment for Sensitivity of a NO2 Gas Sensor with ZnGa2O4/ZnO Core-Shell Nanowires—a Novel Approach

PubMed Central

Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Hsu, Cheng-Liang; Hsueh, Ting Jen; Shieh, Tien-Yu

2010-01-01

The application of novel core-shell nanowires composed of ZnGa2O4/ZnO to improve the sensitivity of NO2 gas sensors is demonstrated in this study. The growth of ZnGa2O4/ZnO core-shell nanowires is performed by reactive evaporation on patterned ZnO:Ga/SiO2/Si templates at 600 °C. This is to form the homogeneous structure of the sensors investigated in this report to assess their sensitivity in terms of NO2 detection. These novel NO2 gas sensors were evaluated at working temperatures of 25 °C and at 250 °C, respectively. The result reveals the ZnGa2O4/ZnO core-shell nanowires present a good linear relationship (R2 > 0.99) between sensitivity and NO2 concentration at both working temperatures. These core-shell nanowire sensors also possess the highest response (<90 s) and recovery (<120 s) values with greater repeatability seen for NO2 sensors at room temperature, unlike traditional sensors that only work effectively at much higher temperatures. The data in this study indicates the newly-developed ZnGa2O4/ZnO core-shell nanowire based sensors are highly promising for industrial applications. PMID:22319286

Hierarchical, ultrathin single-crystal nanowires of CdS conveniently produced in laser-induced thermal field

DOE PAGES

Han, Li -Li; Xin, Huolin L.; Kulinich, Sergei A.; ...

2015-07-16

Hierarchical nanowires (HNWs) exhibit unique properties and have wide applications, while often suffering from imperfect structure. We report a facile strategy toward ultrathin CdS HNWs with monocrystal structure, where a continuous-wave (CW) Nd:YAG laser is employed to irradiate an oleic acid (OA) solution containing precursors and a light absorber. The high heating rate and large temperature gradient generated by the CW laser lead to the rapid formation of tiny zinc-blende CdS nanocrystals which then line up into nanowires with the help of OA molecules. Next, the nanowires experience a phase transformation from zinc-blende to wurtzite structure, and the transformation-induced stressmore » creates terraces on their surface, which promotes the growth of side branches and eventually results in monocrystal HNWs with an ultrathin diameter of 24 nm. The one-step synthesis of HNWs is conducted in air and completes in just 40 seconds, thus being very simple and rapid. The prepared CdS HNWs display photocatalytic performance superior to their nanoparticle counterparts, thus showing promise for catalytic applications in the future.« less

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

2013-03-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Ultracompact Pseudowedge Plasmonic Lasers and Laser Arrays.

PubMed

Chou, Yu-Hsun; Hong, Kuo-Bin; Chang, Chun-Tse; Chang, Tsu-Chi; Huang, Zhen-Ting; Cheng, Pi-Ju; Yang, Jhen-Hong; Lin, Meng-Hsien; Lin, Tzy-Rong; Chen, Kuo-Ping; Gwo, Shangjr; Lu, Tien-Chang

2018-02-14

Concentrating light at the deep subwavelength scale by utilizing plasmonic effects has been reported in various optoelectronic devices with intriguing phenomena and functionality. Plasmonic waveguides with a planar structure exhibit a two-dimensional degree of freedom for the surface plasmon; the degree of freedom can be further reduced by utilizing metallic nanostructures or nanoparticles for surface plasmon resonance. Reduction leads to different lightwave confinement capabilities, which can be utilized to construct plasmonic nanolaser cavities. However, most theoretical and experimental research efforts have focused on planar surface plasmon polariton (SPP) nanolasers. In this study, we combined nanometallic structures intersecting with ZnO nanowires and realized the first laser emission based on pseudowedge SPP waveguides. Relative to current plasmonic nanolasers, the pseudowedge plasmonic lasers reported in our study exhibit extremely small mode volumes, high group indices, high spontaneous emission factors, and high Purell factors beneficial for the strong interaction between light and matter. Furthermore, we demonstrated that compact plasmonic laser arrays can be constructed, which could benefit integrated plasmonic circuits.

Zinc Oxide Nanowire Interphase for Enhanced Lightweight Polymer Fiber Composites

NASA Technical Reports Server (NTRS)

Sodano, Henry A.; Brett, Robert

2011-01-01

The objective of this work was to increase the interfacial strength between aramid fiber and epoxy matrix. This was achieved by functionalizing the aramid fiber followed by growth of a layer of ZnO nanowires on the fiber surface such that when embedded into the polymer, the load transfer and bonding area could be substantially enhanced. The functionalization procedure developed here created functional carboxylic acid surface groups that chemically interact with the ZnO and thus greatly enhance the strength of the interface between the fiber and the ZnO.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

NASA Astrophysics Data System (ADS)

Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

2016-05-01

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

One step biofunctionalized electrospun multiwalled carbon nanotubes embedded zinc oxide nanowire interface for highly sensitive detection of carcinoma antigen-125.

PubMed

Paul, K Brince; Singh, Vikrant; Vanjari, Siva Rama Krishna; Singh, Shiv Govind

2017-02-15

Ovarian cancer is the most leading cause of cancer-related death in women . The carcinoma antigen-125, which is found on the surface of many ovarian cancer cells is known to be a gold standard clinical biomarker associated with life-threatening gynecological malignancy. In this work, we demonstrate a novel biosensor platform based on multiwalled carbon nanotubes embedded zinc oxide nanowire for the ultrasensitive detection of carcinoma antigen-125. Label free detection of the carcinoma antigen-125 was accomplished by differential voltammetry technique that demonstrated excellent sensitivity (90.14µA/(U/mL)/cm 2 ) with a detection limit of 0.00113UmL -1 concentration. The fabricated immunosensor exhibits good performance with wider detection range (0.001UmL -1 -1kUmL -1 ), reproducibility, selectivity, acceptable stability, and thus is a potential cost-effective methodology for point-of-care diagnosis. The multiwalled carbon nanotubes (MWCNTs) embedded highly oriented zinc oxide (ZnO) nanowires were synthesized by simple, low cost electrospinning technique. Compared to pure ZnO nanowires, electrochemical activity of MWCNTs embedded ZnO nanowires was found to be much higher. The calcination temperature was optimized to avoid any decomposition of the CNTs and to obtain multiwalled carbon nanotubes embedded highly crystalline ZnO nanowires. The salient feature of this biosensing platform is that one step calcination process is enough to create the functional groups on MWCNT-ZnO nanowire surface that are effective for the covalent conjugation of antibody without further surface modification. To the best of our knowledge, this is the first report on MWCNT-ZnO nanowire based immunosensor explored for the detection of cancer biomarker. Copyright © 2016 Elsevier B.V. All rights reserved.

The effect of Cu doping on the mechanical and optical properties of zinc oxide nanowires synthesized by hydrothermal route.

PubMed

Robak, Elżbieta; Coy, Emerson; Kotkowiak, Michał; Jurga, Stefan; Załęski, Karol; Drozdowski, Henryk

2016-04-29

Zinc oxide (ZnO) is a wide-bandgap semiconductor material with applications in a variety of fields such as electronics, optoelectronic and solar cells. However, much of these applications demand a reproducible, reliable and controllable synthesis method that takes special care of their functional properties. In this work ZnO and Cu-doped ZnO nanowires are obtained by an optimized hydrothermal method, following the promising results which ZnO nanostructures have shown in the past few years. The morphology of as-prepared and copper-doped ZnO nanostructures is investigated by means of scanning electron microscopy and high resolution transmission electron microscopy. X-ray diffraction is used to study the impact of doping on the crystalline structure of the wires. Furthermore, the mechanical properties (nanoindentation) and the functional properties (absorption and photoluminescence measurements) of ZnO nanostructures are examined in order to assess their applicability in photovoltaics, piezoelectric and hybrids nanodevices. This work shows a strong correlation between growing conditions, morphology, doping and mechanical as well as optical properties of ZnO nanowires.

Enhanced photoluminescence and field-emission behavior of vertically well aligned arrays of In-doped ZnO Nanowires.

PubMed

Ahmad, Mashkoor; Sun, Hongyu; Zhu, Jing

2011-04-01

Vertically oriented well-aligned Indium doped ZnO nanowires (NWs) have been successfully synthesized on Au-coated Zn substrate by controlled thermal evaporation. The effect of indium dopant on the optical and field-emission properties of these well-aligned ZnO NWs is investigated. The doped NWs are found to be single crystals grown along the c-axis. The composition of the doped NWs is confirmed by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), and X-ray photospectroscopy (XPS). The photoluminescence (PL) spectra of doped NWs having a blue-shift in the UV region show a prominent tuning in the optical band gap, without any significant peak relating to intrinsic defects. The turn-on field of the field emission is found to be ∼2.4 V μm(-1) and an emission current density of 1.13 mA cm(-2) under the field of 5.9 V μm(-1). The field enhancement factor β is estimated to be 9490 ± 2, which is much higher than that of any previous report. Furthermore, the doped NWs exhibit good emission current stability with a variation of less than 5% during a 200 s under a field of 5.9 V μm(-1). The superior field emission properties are attributed to the good alignment, high aspect ratio, and better crystallinity of In-doped NWs. © 2011 American Chemical Society

Giant piezoelectric size effects in zinc oxide and gallium nitride nanowires. A first principles investigation.

PubMed

Agrawal, Ravi; Espinosa, Horacio D

2011-02-09

Nanowires made of materials with noncentrosymmetric crystal structure are under investigation for their piezoelectric properties and suitability as building blocks for next-generation self-powered nanodevices. In this work, we investigate the size dependence of piezoelectric coefficients in nanowires of two such materials - zinc oxide and gallium nitride. Nanowires, oriented along their polar axis, ranging from 0.6 to 2.4 nm in diameter were modeled quantum mechanically. A giant piezoelectric size effect is identified for both GaN and ZnO nanowires. However, GaN exhibits a larger and more extended size dependence than ZnO. The observed size effect is discussed in the context of charge redistribution near the free surfaces leading to changes in local polarization. The study reveals that local changes in polarization and reduction of unit cell volume with respect to bulk values lead to the observed size effect. These results have strong implication in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhifeng; Zhang, Yuantao, E-mail: zhangyt@jlu.edu.cn; Cui, Xijun

2014-03-31

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

Femtosecond laser assisted antibacterial activity of ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Luna Palacios, Yryx Yanet; Alvarez, Crysthal; Cuando-Espitia, Natanael; Halaney, David L.; Camacho-Lopez, Santiago; Aguilar, Guillermo

2017-07-01

Bacterial infection of cranial implants remains a major cause of implant failure, and often requires surgical intervention to remove and replace the fouled implant. Novel transparent implants may allow for mitigation of infection using optical therapies, without the need for invasive surgeries. In this study, we investigate a combined treatment with ZnO nanoparticles and femtosecond laser pulses to inhibit the growth of Escherichia coli (E. Coli) in vitro. The combined effect has shown a substantial reduction in the number of CFU/mL after incubation compared with no treatment.

Pulsed laser deposited hexagonal wurzite ZnO thin-film nanostructures/nanotextures for nanophotonics applications

NASA Astrophysics Data System (ADS)

John Chelliah, Cyril Robinson Azariah; Swaminathan, Rajesh

2018-01-01

The high-quality and transparent thin-film zinc oxide (ZnO) nanostructures/nanotextures deposited on glass and silicon substrates using pulsed laser deposition (PLD) technique are reported. A solid-state, Nd-YAG laser was used for the PLD process. The films were deposited (i) at room temperature of 25°C (as deposited), (ii) at 150°C, (iii) at 300°C, (iv) at 450°C, and (v) at 600°C and annealed in the vacuum chamber. The depositions were also carried out at different laser repetition rates such as 10 and 5 Hz. UV spectroscopy and photoluminescence (PL) spectroscopy were carried out for optical studies. X-ray diffraction studies were carried out for all samples and analyzed the effects of the laser repetition rate, deposition, and annealing temperatures on the structural properties. Field-emission scanning electron microscope images are recorded for the best-structured samples. The electrical parameters were calibrated using the Hall effect measurement system and the IV characterization was performed using a CHI Electrochemical workstation. The deposition temperature has a significant effect on the microstrain and dislocation density of the ZnO thin film and optical phenomena with various electrical parameters, including the electron mobility, conductivity, and magnetoresistance. These promising results are suitable conditions for nanophotonics applications.

Quantum-interference transport through surface layers of indium-doped ZnO nanowires.

PubMed

Chiu, Shao-Pin; Lu, Jia Grace; Lin, Juhn-Jong

2013-06-21

We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out four-probe electrical-transport measurements on two individual NWs with geometric diameters of ≈70 and ≈90 nm in a wide temperature T interval of 1-70 K. The NWs reveal overall charge conduction behavior characteristic of disordered metals. In addition to the T dependence of resistance R, we have measured the magnetoresistance (MR) in magnetic fields applied either perpendicular or parallel to the NW axis. Our R(T) and MR data in different T intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a 'core-shell-like structure' in individual IZO NWs, where an outer shell of thickness t (~15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length Lφ gradually decreases with increasing T from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where Lφ approximately equals d, an effective NW diameter which is slightly smaller than the geometric diameter. As T further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where Lφ approximately equals t (ZnO NWs. This work also strongly

Composition and Band Gap Tailoring of Crystalline (GaN)1- x(ZnO) x Solid Solution Nanowires for Enhanced Photoelectrochemical Performance.

PubMed

Li, Jing; Liu, Baodan; Wu, Aimin; Yang, Bing; Yang, Wenjin; Liu, Fei; Zhang, Xinglai; An, Vladimir; Jiang, Xin

2018-05-07

Photoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H 2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN) 1- x (ZnO) x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN) 1- x (ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN) 1- x (ZnO) x nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.

Parameters optimization for synthesis of Al-doped ZnO nanoparticles by laser ablation in water

NASA Astrophysics Data System (ADS)

Krstulović, Nikša; Salamon, Krešimir; Budimlija, Ognjen; Kovač, Janez; Dasović, Jasna; Umek, Polona; Capan, Ivana

2018-05-01

Al-doped ZnO crystalline colloidal nanoparticles were synthesized by a laser ablation of ZnO:Al2O3 in MilliQ water. Experiments were performed systematically by changing the number of applied laser pulses and laser output energy with the aim to affect the nanoparticle size, composition (Al/Zn ratio) and characteristics (band-gap, crystallinity). Distinctly, set of nanoparticle syntheses was performed in deionized water for comparison. SEM investigation of colloidal nanoparticles revealed that the formed nanoparticles are 30 nm thick discs with average diameters ranging from 450 to 510 nm. It was found that craters in the target formed during the laser ablation influence the size of synthesized colloidal nanoparticles. This is explained by efficient nanoparticle growth through diffusion process which take place in spatially restricted volume of the target crater. When laser ablation takes place in deionized water the synthesized nanoparticles have a mesh-like structure with sparse concentration of disc-like nanoparticles. Al/Zn ratio and band-gap energy of nanoparticles are highly influenced by the number and output energy of applied laser pulses. In addition, the procedure how to calculate the concentration of colloidal nanoparticles synthesized by laser ablation in liquids is proposed. The Al-doped ZnO colloidal nanoparticles properties were obtained using different techniques like scanning electron microscopy, optical microscopy, energy-dispersive X-ray spectroscopy, grazing-incidence X-ray diffraction, photoabsorption, photoluminescence and X-ray photoelectron spectroscopy.

Laser Heating of the Core-Shell Nanowires

NASA Astrophysics Data System (ADS)

Astefanoaei, Iordana; Dumitru, Ioan; Stancu, Alexandru

2016-12-01

The induced thermal stress in a heating process is an important parameter to be known and controlled in the magnetization process of core-shell nanowires. This paper analyses the stress produced by a laser heating source placed at one end of a core-shell type structure. The thermal field was computed with the non-Fourier heat transport equation using a finite element method (FEM) implemented in Comsol Multiphysics. The internal stresses are essentially due to thermal gradients and different expansion characteristics of core and shell materials. The stress values were computed using the thermo elastic formalism and are depending on the laser beam parameters (spot size, power etc.) and system characteristics (dimensions, thermal characteristics). Stresses in the GPa range were estimated and consequently we find that the magnetic state of the system can be influenced significantly. A shell material as the glass which is a good thermal insulator induces in the magnetic core, the smaller stresses and consequently the smaller magnetoelastic energy. These results lead to a better understanding of the switching process in the magnetic materials.

Enhancing UV photoconductivity of ZnO nanobelt by polyacrylonitrile functionalization

NASA Astrophysics Data System (ADS)

He, J. H.; Lin, Yen H.; McConney, Michael E.; Tsukruk, Vladimir V.; Wang, Zhong L.; Bao, Gang

2007-10-01

UV photodetector fabricated using a single ZnO nanobelt (NB) has shown a photoresponse enhancement up to 750 times higher than that of a bare ZnO NB after coating with ˜20nm plasma polymerized acrylonitrile (PP-AN) nanoscale film. The mechanism for this colossal photoconductivity is suggested as a consequence of the efficient exciton dissociation under UV illumination due to enhanced electron transfer from valence band of ZnO NB to the PP-AN and then back to the conduction band of ZnO. This process has demonstrated an easy and effective method for improving the performance of the nanowire/NB-based devices, possibly leading to supersensitive UV detector for applications in imaging, photosensing, and intrachip optical interconnects.

Fabrication of lateral electrodes on semiconductor nanowires through structurally matched insulation for functional optoelectronics.

PubMed

Sheng, Yun; Sun, Huabin; Wang, Jianyu; Gao, Fan; Wang, Junzhuan; Pan, Lijia; Pu, Lin; Zheng, Youdou; Shi, Yi

2013-01-18

A strategy of using structurally matched alumina insulation to produce lateral electrodes on semiconductor nanowires is presented. Nanowires in the architecture are structurally matched with alumina insulation using selective anodic oxidation. Lateral electrodes are fabricated by directly evaporating metallic atoms onto the opposite sides of the nanowires. The integrated architecture with lateral electrodes propels carriers to transport them across nanowires and is crucially beneficial to the injection/extraction in optoelectronics. The matched architecture and the insulating properties of the alumina layer are investigated experimentally. ZnO nanowires are functionalized into an ultraviolet photodiode as an example. The present strategy successfully implements an advantageous architecture and is significant in developing diverse semiconductor nanowires in optoelectronic applications.

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

NASA Technical Reports Server (NTRS)

Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

2000-01-01

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

In situ TEM probing of crystallization form-dependent sodiation behavior in ZnO nanowires for sodium-ion batteries

DOE PAGES

Xu, Feng; Li, Zhengrui; Wu, Lijun; ...

2016-09-13

Development of sodium-ion battery (SIB) electrode materials currently lags behind electrodes in commercial lithium-ion batteries (LIBs). However, in the long term, development of SIB components is a valuable goal. Their similar, but not identical, chemistries require careful identification of the underlying sodiation mechanism in SIBs. Here in this study, we utilize in situ transmission electron microscopy to explore quite different sodiation behaviors even in similar electrode materials through real-time visualization of microstructure and phase evolution. Upon electrochemical sodiation, single-crystalline ZnO nanowires (sc-ZNWs) are found to undergo a step-by-step electrochemical displacement reaction, forming crystalline NaZn 13 nanograins dispersed in a Namore » 2O matrix. This process is characterized by a slowly propagating reaction front and the formation of heterogeneous interfaces inside the ZNWs due to non-uniform sodiation amorphization. In contrast, poly-crystalline ZNWs (pc-ZNWs) exhibited an ultrafast sodiation process, which can partly be ascribed to the availability of unobstructed ionic transport pathways among ZnO nanograins. Thus the reaction front and heterogeneous interfaces disappear. The in situ TEM results, supported by calculation of the ion diffusion coefficient, provide breakthrough insights into the dependence of ion diffusion kinetics on crystallization form. This points toward a goal of optimizing the microstructure of electrode materials in order to develop high performance SIBs.« less

Monolithically Integrated High-β Nanowire Lasers on Silicon.

PubMed

Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

2016-01-13

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

Lasing in robust cesium lead halide perovskite nanowires

PubMed Central

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; Wong, Andrew B.; Dou, Letian; Ma, Jie; Wang, Lin-Wang; Leone, Stephen R.; Yang, Peidong

2016-01-01

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic–inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored and handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry–Pérot lasing occurs in CsPbBr3 nanowires with an onset of 5 μJ cm−2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 109 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication. PMID:26862172

Lasing in robust cesium lead halide perovskite nanowires

DOE PAGES

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; ...

2016-02-09

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic-inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored andmore » handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry-Pérot lasing occurs in CsPbBr 3 nanowires with an onset of 5 μJ cm -2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 10 9 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication.« less

Raman Antenna Effect in Semiconducting Nanowires.

NASA Astrophysics Data System (ADS)

Chen, Gugang; Xiong, Qihua; Eklund, Peter

2007-03-01

A novel Raman antenna effect has been observed in Raman scattering experiments recently carried out on individual GaP nanowires [1]. The Raman antenna effect is perfectly general and should appear in all semiconducting nanowires. It is characterized by an anomalous increase in the Raman cross section for scattering from LO or TO phonons when the electric field of the incident laser beam is parallel to the nanowire axis. We demonstrate that the explanation for the effect lies in the polarization dependence of the Mie scattering from the nanowire and the concomitant polarization-dependent electric field set up inside the wire. Our analysis involves calculations of the internal electric field using the discrete dipole approximation (DDA). We find that the Raman antenna effect happens only for nanowire diameters d<λ/4, where λ is the excitation laser wavelength. Our calculations are found in good agreement with recent experimental results for scattering from individual GaP nanowires. [1] Q. Xiong, G. Chen, G. D. Mahan, P. C. Eklund, in preparation, 2006.

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Proton acceleration to above 5.5 MeV by interaction of 1017 W/cm2 laser pulse with H2O nano-wire targets

NASA Astrophysics Data System (ADS)

Schleifer, E.; Bruner, N.; Eisenmann, S.; Botton, M.; Pikuz, S. A., Jr.; Faenov, A. Y.; Gordon, D.; Zigler, A.

2011-05-01

Compact sources of high energy protons (50-500MeV) are expected to be key technology in a wide range of scientific applications 1-8. Particularly promising is the target normal sheah acceleration (TNSA) scheme 9,10, holding record level of 67MeV protons generated by a peta-Watt laser 11. In general, laser intensity exceeding 1018 W/cm2 is required to produce MeV level protons. Enhancing the energy of generated protons using compact laser sources is very attractive task nowadays. Recently, nano-scale targets were used to accelerate ions 12,13. Here we report on the first generation of 5.5-7.5MeV protons by modest laser intensities (4.5 × 1017 W/cm2) interacting with H2O nano-wires (snow) deposited on a Sapphire substrate. In this setup, the plasma near the tip of the nano-wire is subject to locally enhanced laser intensity with high spatial gradients, and confined charge separation is obtained. Electrostatic fields of extremely high intensities are produced, and protons are accelerated to MeV-level energies. Nano-wire engineered targets will relax the demand of peak energy from laser based sources.

A study of H and D doped ZnO epitaxial films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Li, Y. J.; Kaspar, T. C.; Droubay, T. C.; Joly, A. G.; Nachimuthu, P.; Zhu, Z.; Shutthanandan, V.; Chambers, S. A.

2008-09-01

We examine the crystal structure and electrical and optical properties of ZnO epitaxial films grown by pulsed laser deposition in a H2 or D2 ambient. n-type electrical conductivity is enhanced by three orders of magnitude as a result of growing in H2 (D2) compared to ZnO films grown in O2. Hall effect measurements reveal very small carrier activation energies and carrier concentrations in the mid-1018 cm-3 range. Optical absorption measurements show that the enhanced conductivity is not a result of ZnO reduction and interstitial Zn formation. Photoluminescence spectra suggest excitonic emission associated with exciton-hydrogen donor complex formation and show no evidence for midgap emission resulting from defects. We have modeled the transport properties of H (D) doped ZnO films using variable range hopping and surface layer conductivity models, but our data do not fit well with these models. Rather, it appears that growth in H2 (D2) promotes the formation of an exceedingly shallow donor state not seen in ZnO crystals annealed in H2 after growth. This new state may be associated with H (D) substitution at O sites in the lattice.

Quantum-interference transport through surface layers of indium-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Chiu, Shao-Pin; Lu, Jia Grace; Lin, Juhn-Jong

2013-06-01

We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out four-probe electrical-transport measurements on two individual NWs with geometric diameters of ≈70 and ≈90 nm in a wide temperature T interval of 1-70 K. The NWs reveal overall charge conduction behavior characteristic of disordered metals. In addition to the T dependence of resistance R, we have measured the magnetoresistance (MR) in magnetic fields applied either perpendicular or parallel to the NW axis. Our R(T) and MR data in different T intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a ‘core-shell-like structure’ in individual IZO NWs, where an outer shell of thickness t (≃15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length Lφ gradually decreases with increasing T from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where Lφ approximately equals d, an effective NW diameter which is slightly smaller than the geometric diameter. As T further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where Lφ approximately equals t (ZnO NWs. This work also strongly

A Novel Nanowire Assembly Process for the Fabrication of CO Sensor

PubMed Central

Cheng, Biyao; Yang, Shuming; Liu, Tao; Vazinishayan, Ali

2018-01-01

Nanowires have been widely studied due to their outstanding mechanical and electrical properties; however, their practical applications are limited to the lack of an effective technique for controlled assembly. In the present work, zinc oxide (ZnO) nanowire arrays were assembled via a combing process using a makeup brush and the nanodevice was fabricated. The current–voltage (I–V) and ultraviolet (UV) characteristics of the device indicate stable and repeatable electrical properties. The carbon monoxide (CO) sensing properties were tested at operating temperatures of 200, 300 and 400 °C. It was found that ZnO based sensor exhibited the highest sensitivity to CO at 300 °C due to the change of dominant oxygen species. Comparing with others result, the sensitivity of the fabricated sensor exhibits higher sensing performance. The sensing mechanism of the CO sensor is also discussed. PMID:29673203

A Novel Nanowire Assembly Process for the Fabrication of CO Sensor.

PubMed

Cheng, Biyao; Yang, Shuming; Liu, Tao; Vazinishayan, Ali

2018-04-17

Nanowires have been widely studied due to their outstanding mechanical and electrical properties; however, their practical applications are limited to the lack of an effective technique for controlled assembly. In the present work, zinc oxide (ZnO) nanowire arrays were assembled via a combing process using a makeup brush and the nanodevice was fabricated. The current–voltage (I–V) and ultraviolet (UV) characteristics of the device indicate stable and repeatable electrical properties. The carbon monoxide (CO) sensing properties were tested at operating temperatures of 200, 300 and 400 °C. It was found that ZnO based sensor exhibited the highest sensitivity to CO at 300 °C due to the change of dominant oxygen species. Comparing with others result, the sensitivity of the fabricated sensor exhibits higher sensing performance. The sensing mechanism of the CO sensor is also discussed.

Bringing order to the world of nanowire devices by phase shift lithography.

PubMed

Subannajui, Kittitat; Güder, Firat; Zacharias, Margit

2011-09-14

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.

Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires.

PubMed

Guo, Zhen; Zhou, Lianqun; Tang, Yuguo; Li, Lin; Zhang, Zhiqi; Yang, Hongbo; Ma, Hanbin; Nathan, Arokia; Zhao, Dongxu

2017-09-13

Surface/interface charge-carrier generation, diffusion, and recombination/transport modulation are especially important in the construction of photodetectors with high efficiency in the field of nanoscience. In the paper, a kind of ultraviolet (UV) detector is designed based on ZnO nanostructures considering photon-trapping, surface plasmonic resonance (SPR), piezophototronic effects, interface carrier-trapping/transport control, and collection. Through carefully optimized surface/interface carrier-transport modulation, a designed device with detectivity as high as 1.69 × 10 16 /1.71 × 10 16 cm·Hz 1/2 /W irradiating with 380 nm photons under ultralow bias of 0.2 V is realized by alternating nanoparticle/nanowire active layers, respectively, and the designed UV photodetectors show fast and slow recovery processes of 0.27 and 4.52 ms, respectively, which well-satisfy practical needs. Further, it is observed that UV photodetection could be performed within an alternative response by varying correlated key parameters, through efficient surface/interface carrier-transport modulation, spectrally resolved photoresponse of the detector revealing controlled detection in the UV region based on the ZnO nanomaterial, photodetection allowed or limited by varying the active layers, irradiation distance from one of the electrodes, standing states, or electric field. The detailed carrier generation, diffusion, and recombination/transport processes are well illustrated to explain charge-carrier dynamics contributing to the photoresponse behavior.

Hierarchical laser-induced periodic surface structures induced by femtosecond laser on the surface of a ZnO film

NASA Astrophysics Data System (ADS)

Wang, Shaojun; Jiang, Lan; Han, Weina; Hu, Jie; Li, Xiaowei; Wang, Qingsong; Lu, Yongfeng

2018-05-01

We realize hierarchical laser-induced periodic surface structures (LIPSSs) on the surface of a ZnO thin film in a single step by the irradiation of femtosecond laser pulses. The structures are characterized by the high-spatial-frequency LIPSSs (HSFLs) formed on the abnormal bumped low-spatial-frequency LIPSSs (LSFLs). Localized electric-field enhancement based on the initially formed LSFLs is proposed as a potential mechanism for the formation of HSFLs. The simulation results through the finite-difference time-domain method show good agreement with experiments. Furthermore, the crucial role of the LSFLs in the formation of HSFLs is validated by an elaborate experimental design with preprocessed HSFLs.

Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

NASA Astrophysics Data System (ADS)

Mayo, Daniel C.; Nolen, J. Ryan; Cook, Andrew; Mu, Richard R.; Haglund, Richard F.

2016-03-01

Conventional scintillation detectors are typically single crystals of heavy-metal oxides or halides doped with rare-earth ions that record the recombination of electron-hole pairs by photon emission in the visible to ultraviolet. However, the light yields are typically low enough to require photomultiplier detection with the attendant instrumental complications. Here we report initial studies of gamma ray detection by zinc oxide (ZnO) nanowires, grown by vapor-solid deposition. The nanowires grow along the c-axis in a wurtzite structure; they are typically 80 nm in diameter and have lengths of 1- 2 μm. The nanowires are single crystals of high quality, with a photoluminescence (PL) yield from band-edge exciton emission in the ultraviolet that is typically one hundred times larger than the PL yield from defect centers in the visible. Nanowire ensembles were irradiated by 662 keV gamma rays from a Cs-137 source for periods of up to ten hours; gamma rays in this energy range interact by Compton scattering, which in ZnO creates F+ centers that relax to form singly-charged positive oxygen vacancies. Following irradiation, we fit the PL spectra of the visible emission with a sum of Gaussians at the energies of the known defects. We find highly efficient PL from the irradiated area, with a figure of merit approaching 106 photons/s/MeV of deposited energy. Over a period of days, the singly charged O+ vacancies relax to the more stable doubly charged O++ vacancies. However, the overall defect PL returns to pre-irradiation values after about a week, as the vacancies diffuse to the surface of these very thin nanowires, indicating that a self-healing process restores the nanowires to their original state.

ZnO nanomaterials based surface acoustic wave ethanol gas sensor.

PubMed

Wu, Y; Li, X; Liu, J H; He, Y N; Yu, L M; Liu, W H

2012-08-01

ZnO nanomaterials based surface acoustic wave (SAW) gas sensor has been investigated in ethanol environment at room temperature. The ZnO nanomaterials have been prepared through thermal evaporation of high-purity zinc powder. The as-prepared ZnO nanomaterials have been characterized with scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray Diffraction (XRD) techniques. The results indicate that the obtained ZnO nanomaterials, including many types of nanostructures such as nanobelts, nanorods, nanowires as well as nanosheets, are wurtzite with hexagonal structure and well-crystallized. The SAW sensor coated with the nanostructured ZnO materials has been tested in ethanol gas of various concentrations at room temperature. A network analyzer is used to monitor the change of the insertion loss of the SAW sensor when exposed to ethanol gas. The insertion loss of the SAW sensor varies significantly with the change of ethanol concentration. The experimental results manifest that the ZnO nanomaterials based SAW ethanol gas sensor exhibits excellent sensitivity and good short-term reproducibility at room temperature.

Pure and Sn-doped ZnO films produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Holmelund, E.; Schou, J.; Tougaard, S.; Larsen, N. B.

2002-09-01

A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced with Sn concentrations up to 16%. The specific resistivity is found to increase and the transmission of visible light to decrease with increasing Sn concentration.

Stability Enhancement of Silver Nanowire Networks with Conformal ZnO Coatings Deposited by Atmospheric Pressure Spatial Atomic Layer Deposition.

PubMed

Khan, Afzal; Nguyen, Viet Huong; Muñoz-Rojas, David; Aghazadehchors, Sara; Jiménez, Carmen; Nguyen, Ngoc Duy; Bellet, Daniel

2018-06-06

Silver nanowire (AgNW) networks offer excellent electrical and optical properties and have emerged as one of the most attractive alternatives to transparent conductive oxides to be used in flexible optoelectronic applications. However, AgNW networks still suffer from chemical, thermal, and electrical instabilities, which in some cases can hinder their efficient integration as transparent electrodes in devices such as solar cells, transparent heaters, touch screens, and organic light emitting diodes. We have used atmospheric pressure spatial atomic layer deposition (AP-SALD) to fabricate hybrid transparent electrode materials in which the AgNW network is protected by a conformal thin layer of zinc oxide. The choice of AP-SALD allows us to maintain the low-cost and scalable processing of AgNW-based transparent electrodes. The effects of the ZnO coating thickness on the physical properties of AgNW networks are presented. The composite electrodes show a drastic enhancement of both thermal and electrical stabilities. We found that bare AgNWs were stable only up to 300 °C when subjected to thermal ramps, whereas the ZnO coating improved the stability up to 500 °C. Similarly, ZnO-coated AgNWs exhibited an increase of 100% in electrical stability with respect to bare networks, withstanding up to 18 V. A simple physical model shows that the origin of the stability improvement is the result of hindered silver atomic diffusion thanks to the presence of the thin oxide layer and the quality of the interfaces of hybrid electrodes. The effects of ZnO coating on both the network adhesion and optical transparency are also discussed. Finally, we show that the AP-SALD ZnO-coated AgNW networks can be effectively used as very stable transparent heaters.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

PubMed Central

Maijenburg, A. Wouter; Rodijk, Eddy J.B.; Maas, Michiel G.; ten Elshof, Johan E.

2014-01-01

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 µm were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution. PMID:24837535

Electrostatically Gated Graphene-Zinc Oxide Nanowire Heterojunction.

PubMed

You, Xueqiu; Pak, James Jungho

2015-03-01

This paper presents an electrostatically gated graphene-ZnO nanowire (NW) heterojunction for the purpose of device applications for the first time. A sub-nanometer-thick energy barrier width was formed between a monatomic graphene layer and electrochemically grown ZnO NWs. Because of the narrow energy barrier, electrons can tunnel through the barrier when a voltage is applied across the junction. A near-ohmic current-voltage (I-V) curve was obtained from the graphene-electrochemically grown ZnO NW heterojunction. This near-ohmic contact changed to asymmetric I-V Schottky contact when the samples were exposed to an oxygen environment. It is believed that the adsorbed oxygen atoms or molecules on the ZnO NW surface capture free electrons of the ZnO NWs, thereby creating a depletion region in the ZnO NWs. Consequentially, the electron concentration in the ZnO NWs is dramatically reduced, and the energy barrier width of the graphene-ZnO NW heterojunction increases greatly. This increased energy barrier width reduces the electron tunneling probability, resulting in a typical Schottky contact. By adjusting the back-gate voltage to control the graphene-ZnO NW Schottky energy barrier height, a large modulation on the junction current (on/off ratio of 10(3)) was achieved.

Alignment of human cardiomyocytes on laser patterned biphasic core/shell nanowire assemblies

NASA Astrophysics Data System (ADS)

Kiefer, Karin; Lee, Juseok; Haidar, Ayman; Martinez Miró, Marina; Akkan, Cagri Kaan; Veith, Michael; Cenk Aktas, Oral; Abdul-Khaliq, Hashim

2014-12-01

The management of end stage heart failure patients is only possible by heart transplantation or by the implantation of artificial hearts as a bridge for later transplantation. However, these therapeutic strategies are limited by a lack of donor hearts and by the associated complications, such as coagulation and infection, due to the used artificial mechanical circulatory assist devices. Therefore, new strategies for myocardial regenerative approaches are under extensive research to produce contractile myocardial tissue in the future to replace non-contractile myocardial ischemic and scarred tissue. Different approaches, such as cell transplantation, have been studied intensively. Although successful approaches have been observed, there are still limitations to the application. It is envisaged that myocardial tissue engineering can be used to help replace infarcted non-contractile tissue. The developed tissue should later mimic the aligned fibrillar structure of the extracellular matrix and provide important guidance cues for the survival, function and the needed orientation of cardiomyocytes. Nanostructured surfaces have been tested to provide a guided direction that cells can follow. In the present study, the cellular adhesion/alignment of human cardiomyocytes and the biocompatibility have been investigated after cultivation on different laser-patterned nanowires compared with unmodified nanowires. As a result, the nanostructured surfaces possessed good biocompatibility before and after laser modification. The laser-induced scalability of the pattern enabled the growth and orientation of the adhered myocardial tissue. Such approaches may be used to modify the surface of potential scaffolds to develop myocardial contractile tissue in the future.

Super low threshold plasmonic WGM lasing from an individual ZnO hexagonal microrod on an Au substrate for plasmon lasers.

PubMed

Dong, H M; Yang, Y H; Yang, G W

2015-03-05

We demonstrate an individual ZnO hexagonal microrod on the surface of an Au substrate which can become new sources for manufacturing miniature ZnO plasmon lasers by surface plasmon polariton coupling to whispering-gallery modes (WGMs). We also demonstrate that the rough surface of Au substrates can acquire a more satisfied enhancement of ZnO emission if the surface geometry of Au substrates is appropriate. Furthermore, we achieve high Q factor and super low threshold plasmonic WGM lasing from an individual ZnO hexagonal microrod on the surface of the Au substrate, in which Q factor can reach 5790 and threshold is 0.45 KW/cm(2) which is the lowest value reported to date for ZnO nanostructures lasing, at least 10 times smaller than that of ZnO at the nanometer. Electron transfer mechanisms are proposed to understand the physical origin of quenching and enhancement of ZnO emission on the surface of Au substrates. These investigations show that this novel coupling mode holds a great potential of ZnO hexagonal micro- and nanorods for data storage, bio-sensing, optical communications as well as all-optic integrated circuits.

Narrow titanium oxide nanowires induced by femtosecond laser pulses on a titanium surface

NASA Astrophysics Data System (ADS)

Li, Hui; Li, Xian-Feng; Zhang, Cheng-Yun; Tie, Shao-Long; Lan, Sheng

2017-02-01

The evolution of the nanostructure induced on a titanium (Ti) surface with increasing irradiation pulse number by using a 400-nm femtosecond laser was examined by using scanning electron microscopy. High spatial frequency periodic structures of TiO2 parallel to the laser polarization were initially observed because of the laser-induced oxidation of the Ti surface and the larger efficacy factor of TiO2 in this direction. Periodically aligned TiO2 nanowires with featured width as small as 20 nm were obtained. With increasing pulse number, however, low spatial frequency periodic structures of Ti perpendicular to the laser polarization became dominant because Ti possesses a larger efficacy factor in this direction. The competition between the high- and low-spatial frequency periodic structures is in good agreement with the prediction of the efficacy factor theory and it should also be observed in the femtosecond laser ablation of other metals which are easily oxidized in air.

The Laser-Assisted Field Effect Transistor Gas Sensor Based on Morphological Zinc-Excited Tin-Doped In2O3 Nanowires

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Khosravinejad, Fariba

The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures’ morphology. The fabricated nanowires for the optimized annealing temperature in applied growth technique were around 60nm in diameter.

Simulation of Young’s moduli for hexagonal ZnO [0 0 0 1]-oriented nanowires: first principles and molecular mechanical calculations

NASA Astrophysics Data System (ADS)

Bandura, Andrei V.; Evarestov, Robert A.; Lukyanov, Sergey I.; Piskunov, Sergei; Zhukovskii, Yuri F.

2017-08-01

Morphologically reproducible wurtzite-structured zinc oxide nanowires (ZnO NWs) can be synthesized by different methods. Since ZnO NWs have been found to possess piezoelectricity, a comprehensive study of their mechanical properties, e.g. deformations caused by external compression or stretching, is one of the actual tasks of this paper. We have calculated wurtzite-structured [0 0 0 1]-oriented ZnO NWs whose diameters have been varied within 1-5 nm and 1-20 nm ranges when using either ab initio (hybrid DFT-LCAO) or force-field (molecular mechanical) methods, respectively (the minimum diameter d NW of experimentally synthesized NWs has been estimated on average to be ~20 nm). When using both chosen calculation approaches, the values of Young’s moduli determined for the mentioned ranges of NW diameters have been found to be qualitatively compatible (168-169 GPa for 5 nm NW thickness), whereas results of molecular mechanical simulations on Y NW for 20 nm-thick NWs (160-162 GPa) have been qualitatively comparable with those experimentally measured along the [0 0 0 1] direction of NW loading. In all the cases, a gradual increase of the NW diameter has resulted in an asymptotic decrease of Young’s modulus consequently approaching that (Y b) of wurtzite-structured ZnO bulk along its [0 0 0 1] axis. The novelty of this study is that we combine the computation methods of quantum chemistry and molecular mechanics, while the majority of previous studies with the same aim have focused on the application of different classical molecular dynamical methods.

Aligned hierarchical Ag/ZnO nano-heterostructure arrays via electrohydrodynamic nanowire template for enhanced gas-sensing properties.

PubMed

Yin, Zhouping; Wang, Xiaomei; Sun, Fazhe; Tong, Xiaohu; Zhu, Chen; Lv, Qiying; Ye, Dong; Wang, Shuai; Luo, Wei; Huang, YongAn

2017-09-22

Gas sensing performance can be improved significantly by the increase in both the effective gas exposure area and the surface reactivitiy of ZnO nanorods. Here, we propose aligned hierarchical Ag/ZnO nano-heterostructure arrays (h-Ag/ZnO-NAs) via electrohydrodynamic nanowire template, together with a subsequent hydrothermal synthesis and photoreduction reaction. The h-Ag/ZnO-NAs scatter at top for higher specific surface areas with the air, simultaneously contact at root for the electrical conduction. Besides, the ZnO nanorods are uniformly coated with dispersed Ag nanoparticles, resulting in a tremendous enhancement of the surface reactivity. Compared with pure ZnO, such h-Ag/ZnO-NAs exhibit lower electrical resistance and faster responses. Moreover, they demonstrate enhanced NO 2 gas sensing properties. Self-assembly via electrohydrodynamic nanowire template paves a new way for the preparation of high performance gas sensors.

Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

NASA Astrophysics Data System (ADS)

Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

2012-01-01

Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

5.5-7.5 MeV Proton Generation by a Moderate-Intensity Ultrashort-Pulse Laser Interaction with H2O Nanowire Targets

NASA Astrophysics Data System (ADS)

Zigler, A.; Palchan, T.; Bruner, N.; Schleifer, E.; Eisenmann, S.; Botton, M.; Henis, Z.; Pikuz, S. A.; Faenov, A. Y., Jr.; Gordon, D.; Sprangle, P.

2011-04-01

We report on the first generation of 5.5-7.5 MeV protons by a moderate-intensity short-pulse laser (˜5×1017W/cm2, 40 fsec) interacting with frozen H2O nanometer-size structure droplets (snow nanowires) deposited on a sapphire substrate. In this setup, the laser intensity is locally enhanced by the snow nanowire, leading to high spatial gradients. Accordingly, the nanoplasma is subject to enhanced ponderomotive potential, and confined charge separation is obtained. Electrostatic fields of extremely high intensities are produced over the short scale length, and protons are accelerated to MeV-level energies.

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

NASA Astrophysics Data System (ADS)

Oh, Min-Suk

2018-04-01

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

Uninterrupted and reusable source for the controlled growth of nanowires

PubMed Central

Sugavaneshwar, R. P.; Nanda, Karuna Kar

2013-01-01

Generally, the length of the oxide nanowires grown by vapor phase transport is limited by the degradation of the source materials. Furthermore, the source material is used once for the nanowires growth. By exploiting the Si-Zn phase diagram, we have developed a simple methodology for the non-catalytic growth of ultralong ZnO nanowires in large area with controllable aspect ratio and branched structures. The insolubility of Zn in Si and the use of a Si cap on the Zn source to prevent local source oxidation of Zn (i. e. prevents the degradation of the source) are the keys to grow longer nanowires without limitations. It has been shown that the aspect ratio can be controlled by thermodynamically (temperature) and more importantly by kinetically (vapor flux). One of the interesting findings is that the same source material can be used for several depositions of oxide nanostructured materials. PMID:23412010

Strong visible and near infrared photoluminescence from ZnO nanorods/nanowires grown on single layer graphene studied using sub-band gap excitation

NASA Astrophysics Data System (ADS)

Biroju, Ravi K.; Giri, P. K.

2017-07-01

Fabrication and optoelectronic applications of graphene based hybrid 2D-1D semiconductor nanostructures have gained tremendous research interest in recent times. Herein, we present a systematic study on the origin and evolution of strong broad band visible and near infrared (NIR) photoluminescence (PL) from vertical ZnO nanorods (NRs) and nanowires (NWs) grown on single layer graphene using both above band gap and sub-band gap optical excitations. High resolution field emission scanning electron microscopy and X-ray diffraction studies are carried out to reveal the morphology and crystalline quality of as-grown and annealed ZnO NRs/NWs on graphene. Room temperature PL studies reveal that besides the UV and visible PL bands, a new near-infrared (NIR) PL emission band appears in the range between 815 nm and 886 nm (1.40-1.52 eV). X-ray photoelectron spectroscopy studies revealed excess oxygen content and unreacted metallic Zn in the as-grown ZnO nanostructures, owing to the low temperature growth by a physical vapor deposition method. Post-growth annealing at 700 °C in the Ar gas ambient results in the enhanced intensity of both visible and NIR PL bands. On the other hand, subsequent high vacuum annealing at 700 °C results in a drastic reduction in the visible PL band and complete suppression of the NIR PL band. PL decay dynamics of green emission in Ar annealed samples show tri-exponential decay on the nanosecond timescale including a very slow decay component (time constant ˜604.5 ns). Based on these results, the NIR PL band comprising two peaks centered at ˜820 nm and ˜860 nm is tentatively assigned to neutral and negatively charged oxygen interstitial (Oi) defects in ZnO, detected experimentally for the first time. The evidence for oxygen induced trap states on the ZnO NW surface is further substantiated by the slow photocurrent response of graphene-ZnO NRs/NWs. These results are important for tunable light emission, photodetection, and other cutting edge

Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Novotný, M.; Čížek, J.; Kužel, R.; Bulíř, J.; Lančok, J.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.; Anwand, W.; Brauer, G.

2012-06-01

ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ˜ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ˜ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate.

Flexible cellulose and ZnO hybrid nanocomposite and its UV sensing characteristics

PubMed Central

Mun, Seongcheol; Kim, Hyun Chan; Ko, Hyun-U; Zhai, Lindong; Kim, Jung Woong; Kim, Jaehwan

2017-01-01

Abstract This paper reports the synthesis and UV sensing characteristics of a cellulose and ZnO hybrid nanocomposite (CEZOHN) prepared by exploiting the synergetic effects of ZnO functionality and the renewability of cellulose. Vertically aligned ZnO nanorods were grown well on a flexible cellulose film by direct ZnO seeding and hydrothermal growing processes. The ZnO nanorods have the wurtzite structure and an aspect ratio of 9 ~ 11. Photoresponse of the prepared CEZOHN was evaluated by measuring photocurrent under UV illumination. CEZOHN shows bi-directional, linear and fast photoresponse as a function of UV intensity. Electrode materials, light sources, repeatability, durability and flexibility of the prepared CEZOHN were tested and the photocurrent generation mechanism is discussed. The silver nanowire coating used for electrodes on CEZOHN is compatible with a transparent UV sensor. The prepared CEZOHN is flexible, transparent and biocompatible, and hence can be used for flexible and wearable UV sensors. PMID:28740560

Flexible cellulose and ZnO hybrid nanocomposite and its UV sensing characteristics

NASA Astrophysics Data System (ADS)

Mun, Seongcheol; Kim, Hyun Chan; Ko, Hyun-U.; Zhai, Lindong; Kim, Jung Woong; Kim, Jaehwan

2017-12-01

This paper reports the synthesis and UV sensing characteristics of a cellulose and ZnO hybrid nanocomposite (CEZOHN) prepared by exploiting the synergetic effects of ZnO functionality and the renewability of cellulose. Vertically aligned ZnO nanorods were grown well on a flexible cellulose film by direct ZnO seeding and hydrothermal growing processes. The ZnO nanorods have the wurtzite structure and an aspect ratio of 9 11. Photoresponse of the prepared CEZOHN was evaluated by measuring photocurrent under UV illumination. CEZOHN shows bi-directional, linear and fast photoresponse as a function of UV intensity. Electrode materials, light sources, repeatability, durability and flexibility of the prepared CEZOHN were tested and the photocurrent generation mechanism is discussed. The silver nanowire coating used for electrodes on CEZOHN is compatible with a transparent UV sensor. The prepared CEZOHN is flexible, transparent and biocompatible, and hence can be used for flexible and wearable UV sensors.

Dissolution-Induced Nanowire Synthesis on Hot-Dip Galvanized Surface in Supercritical Carbon Dioxide.

PubMed

Kaleva, Aaretti; Saarimaa, Ville; Heinonen, Saara; Nikkanen, Juha-Pekka; Markkula, Antti; Väisänen, Pasi; Levänen, Erkki

2017-07-11

In this study, we demonstrate a rapid treatment method for producing a needle-like nanowire structure on a hot-dip galvanized sheet at a temperature of 50 °C. The processing method involved only supercritical carbon dioxide and water to induce a reaction on the zinc surface, which resulted in growth of zinc hydroxycarbonate nanowires into flower-like shapes. This artificial patina nanostructure predicts high surface area and offers interesting opportunities for its use in industrial high-end applications. The nanowires can significantly improve paint adhesion and promote electrochemical stability for organic coatings, or be converted to ZnO nanostructures by calcining to be used in various semiconductor applications.

Dissolution-Induced Nanowire Synthesis on Hot-Dip Galvanized Surface in Supercritical Carbon Dioxide

PubMed Central

Saarimaa, Ville; Heinonen, Saara; Nikkanen, Juha-Pekka; Markkula, Antti; Väisänen, Pasi; Levänen, Erkki

2017-01-01

In this study, we demonstrate a rapid treatment method for producing a needle-like nanowire structure on a hot-dip galvanized sheet at a temperature of 50 °C. The processing method involved only supercritical carbon dioxide and water to induce a reaction on the zinc surface, which resulted in growth of zinc hydroxycarbonate nanowires into flower-like shapes. This artificial patina nanostructure predicts high surface area and offers interesting opportunities for its use in industrial high-end applications. The nanowires can significantly improve paint adhesion and promote electrochemical stability for organic coatings, or be converted to ZnO nanostructures by calcining to be used in various semiconductor applications. PMID:28696374

ZnO nanofiber (NFs) growth from ZnO nanowires (NWs) by controlling growth temperature on flexible Teflon substrate by CBD technique for UV photodetector

NASA Astrophysics Data System (ADS)

Farhat, O. F.; Halim, M. M.; Ahmed, Naser M.; Qaeed, M. A.

2016-12-01

In this study, ZnO nanofibers (ZnO NFs) were successfully grown for the first time on Teflon substrates using CBD technique. The well-aligned ZnO nanorods (ZnO NRs) were transformed to ZnO nanofibers (NFs) by varying growth temperature and growth time. The high intensity and distinct growth orientation of peaks observed in the XRD spectra of the NFs indicate high crystal quality. The field emission scanning electron microscopy (FESEM) revealed high density of small diameter sized and long ZnO nanofibers (NFs) that are distributed in random directions. Raman analyses revealed a high E2 (high) peak at 436 nm, which indicates the wurtzite structure of ZnO. A flexible ZnO nanofiber (NFs)-based metal-semiconductor-metal UV detector was fabricated and analyzed for photo response and sensitivity under low power illumination (375 nm, 1.5 mW/cm2). The results showed a sensitivity of 4045% which can be considered a relatively high response and baseline recovery for UV detection.

Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties

NASA Astrophysics Data System (ADS)

Khan, Muhammad Arif; Wahab, Yussof; Muhammad, Rosnita; Tahir, Muhammad; Sakrani, Samsudi

2018-03-01

Development of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8-10 nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I-V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4 ± 0.05 and 0.23 ± 0.005 eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.

Piezoelectric properties of zinc oxide nanowires: an ab initio study.

PubMed

Korir, K K; Cicero, G; Catellani, A

2013-11-29

Nanowires made of materials with non-centrosymmetric crystal structures are expected to be ideal building blocks for self-powered nanodevices due to their piezoelectric properties, yet a controversial explanation of the effective operational mechanisms and size effects still delays their real exploitation. To solve this controversy, we propose a methodology based on DFT calculations of the response of nanostructures to external deformations that allows us to distinguish between the different (bulk and surface) contributions: we apply this scheme to evaluate the piezoelectric properties of ZnO [0001] nanowires, with a diameter up to 2.3 nm. Our results reveal that, while surface and confinement effects are negligible, effective strain energies, and thus the nanowire mechanical response, are dependent on size. Our unified approach allows for a proper definition of piezoelectric coefficients for nanostructures, and explains in a rigorous way the reason why nanowires are found to be more sensitive to mechanical deformation than the corresponding bulk material.

Dual-color single-mode lasing in axially coupled organic nanowire resonators

PubMed Central

Zhang, Chunhuan; Zou, Chang-Ling; Dong, Haiyun; Yan, Yongli; Yao, Jiannian; Zhao, Yong Sheng

2017-01-01

Miniaturized lasers with multicolor output and high spectral purity are of crucial importance for yielding more compact and more versatile photonic devices. However, multicolor lasers usually operate in multimode, which largely restricts their practical applications due to the lack of an effective mode selection mechanism that is simultaneously applicable to multiple wavebands. We propose a mutual mode selection strategy to realize dual-color single-mode lasing in axially coupled cavities constructed from two distinct organic self-assembled single-crystal nanowires. The unique mode selection mechanism in the heterogeneously coupled nanowires was elucidated experimentally and theoretically. With each individual nanowire functioning as both the laser source and the mode filter for the other nanowire, dual-color single-mode lasing was successfully achieved in the axially coupled heterogeneous nanowire resonators. Furthermore, the heterogeneously coupled resonators provided multiple nanoscale output ports for delivering coherent signals with different colors, which could greatly contribute to increasing the integration level of functional photonic devices. These results advance the fundamental understanding of the lasing modulation in coupled cavity systems and offer a promising route to building multifunctional nanoscale lasers for high-level practical photonic integrations. PMID:28785731

Strain analysis of nanowire interfaces in multiscale composites

NASA Astrophysics Data System (ADS)

Malakooti, Mohammad H.; Zhou, Zhi; Spears, John H.; Shankwitz, Timothy J.; Sodano, Henry A.

2016-04-01

Recently, the reinforcement-matrix interface of fiber reinforced polymers has been modified through grafting nanostructures - particularly carbon nanotubes and ZnO nanowires - on to the fiber surface. This type of interface engineering has made a great impact on the development of multiscale composites that have high stiffness, interfacial strength, toughness, and vibrational damping - qualities that are mutually exclusive to a degree in most raw materials. Although the efficacy of such nanostructured interfaces has been established, the reinforcement mechanisms of these multiscale composites have not been explored. Here, strain transfer across a nanowire interphase is studied in order to gain a heightened understanding of the working principles of physical interface modification and the formation of a functional gradient. This problem is studied using a functionally graded piezoelectric interface composed of vertically aligned lead zirconate titanate nanowires, as their piezoelectric properties can be utilized to precisely control the strain on one side of the interface. The displacement and strain across the nanowire interface is captured using digital image correlation. It is demonstrated that the material gradient created through nanowires cause a smooth strain transfer from reinforcement phase into matrix phase that eliminates the stress concentration between these phases, which have highly mismatched elasticity.

The Conductive Silver Nanowires Fabricated by Two-beam Laser Direct Writing on the Flexible Sheet.

PubMed

He, Gui-Cang; Zheng, Mei-Ling; Dong, Xian-Zi; Jin, Feng; Liu, Jie; Duan, Xuan-Ming; Zhao, Zhen-Sheng

2017-02-02

Flexible electrically conductive nanowires are now a key component in the fields of flexible devices. The achievement of metal nanowire with good flexibility, conductivity, compact and smooth morphology is recognized as one critical milestone for the flexible devices. In this study, a two-beam laser direct writing system is designed to fabricate AgNW on PET sheet. The minimum width of the AgNW fabricated by this method is 187 ± 34 nm with the height of 84 ± 4 nm. We have investigated the electrical resistance under different voltages and the applicable voltage per meter range is determined to be less than 7.5 × 10 3  V/m for the fabricated AgNW. The flexibility of the AgNW is very excellent, since the resistance only increases 6.63% even after the stretched bending of 2000 times at such a small bending radius of 1.0 mm. The proposed two-beam laser direct writing is an efficient method to fabricate AgNW on the flexible sheet, which could be applied in flexible micro/nano devices.

Rapid and controllable flame reduction of TiO2 nanowires for enhanced solar water-splitting.

PubMed

Cho, In Sun; Logar, Manca; Lee, Chi Hwan; Cai, Lili; Prinz, Fritz B; Zheng, Xiaolin

2014-01-08

We report a new flame reduction method to generate controllable amount of oxygen vacancies in TiO2 nanowires that leads to nearly three times improvement in the photoelectrochemical (PEC) water-splitting performance. The flame reduction method has unique advantages of a high temperature (>1000 °C), ultrafast heating rate, tunable reduction environment, and open-atmosphere operation, so it enables rapid formation of oxygen vacancies (less than one minute) without damaging the nanowire morphology and crystallinity and is even applicable to various metal oxides. Significantly, we show that flame reduction greatly improves the saturation photocurrent densities of TiO2 nanowires (2.7 times higher), α-Fe2O3 nanowires (9.4 times higher), ZnO nanowires (2.0 times higher), and BiVO4 thin film (4.3 times higher) in comparison to untreated control samples for PEC water-splitting applications.

5.5-7.5 MeV Proton Generation by a Moderate-Intensity Ultrashort-Pulse Laser Interaction with H{sub 2}O Nanowire Targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zigler, A.; Palchan, T.; Bruner, N.

We report on the first generation of 5.5-7.5 MeV protons by a moderate-intensity short-pulse laser ({approx}5x10{sup 17} W/cm{sup 2}, 40 fsec) interacting with frozen H{sub 2}O nanometer-size structure droplets (snow nanowires) deposited on a sapphire substrate. In this setup, the laser intensity is locally enhanced by the snow nanowire, leading to high spatial gradients. Accordingly, the nanoplasma is subject to enhanced ponderomotive potential, and confined charge separation is obtained. Electrostatic fields of extremely high intensities are produced over the short scale length, and protons are accelerated to MeV-level energies.

High Piezo-photocatalytic Efficiency of CuS/ZnO Nanowires Using Both Solar and Mechanical Energy for Degrading Organic Dye.

PubMed

Hong, Deyi; Zang, Weili; Guo, Xiao; Fu, Yongming; He, Haoxuan; Sun, Jing; Xing, Lili; Liu, Baodan; Xue, Xinyu

2016-08-24

High piezo-photocatalytic efficiency of degrading organic pollutants has been realized from CuS/ZnO nanowires using both solar and mechanical energy. CuS/ZnO heterostructured nanowire arrays are compactly/vertically aligned on stainless steel mesh by a simple two-step wet-chemical method. The mesh-supported nanocomposites can facilitate an efficient light harvesting due to the large surface area and can also be easily removed from the treated solution. Under both solar and ultrasonic irradiation, CuS/ZnO nanowires can rapidly degrade methylene blue (MB) in aqueous solution, and the recyclability is investigated. In this process, the ultrasonic assistance can greatly enhance the photocatalytic activity. Such a performance can be attributed to the coupling of the built-in electric field of heterostructures and the piezoelectric field of ZnO nanowires. The built-in electric field of the heterostructure can effectively separate the photogenerated electrons/holes and facilitate the carrier transportation. The CuS component can improve the visible light utilization. The piezoelectric field created by ZnO nanowires can further separate the photogenerated electrons/holes through driving them to migrate along opposite directions. The present results demonstrate a new water-pollution solution in green technologies for the environmental remediation at the industrial level.

Negative thermal quenching of photoluminescence in zinc oxide nanowire-core/graphene-shell complexes.

PubMed

Lin, S S; Chen, B G; Xiong, W; Yang, Y; He, H P; Luo, J

2012-09-10

Graphene is an atomic thin two-dimensional semimetal whereas ZnO is a direct wide band gap semiconductor with a strong light-emitting ability. In this paper, we report on photoluminescence (PL) of ZnO-nanowires (NWs)-core/Graphene-shell heterostructures, which shows a negative thermal quenching (NTQ) behavior both for the near band-edge and deep level emission. The abnormal PL behavior was understood through the charging and discharging processes between ZnO NWs and graphene. The NTQ properties are most possibly induced by the unique rapidly increasing density of states of graphene as a function of Fermi level, which promises a higher quantum tunneling probability between graphene and ZnO at a raised temperature.

Optically controllable nanobreaking of metallic nanowires

NASA Astrophysics Data System (ADS)

Zhou, Lina; Lu, Jinsheng; Yang, Hangbo; Luo, Si; Wang, Wei; Lv, Jun; Qiu, Min; Li, Qiang

2017-02-01

Nanobreaking of nanowires has shown its necessity for manufacturing integrated nanodevices as nanojoining does. In this letter, we develop a method for breaking gold pentagonal nanowires by taking advantage of the photothermal effect with a 532 nm continuous-wave (CW) laser. The critical power required for nanobreaking is much lower for perpendicular polarization than that for parallel polarization. By controlling the polarization and the power of the irradiation light for nanobreaking, the nanowires can be cut into segments with gap widths ranging from dozens of nanometers to several micrometers. This CW light-induced single point nanobreaking of metallic nanowires provides a highly useful and promising method in constructing nanosystems.

Microstructural changes in CdSe-coated ZnO nanowires evaluated by in situ annealing in transmission electron microscopy and x-ray diffraction

NASA Astrophysics Data System (ADS)

Majidi, Hasti; Winkler, Christopher R.; Taheri, Mitra L.; Baxter, Jason B.

2012-07-01

We report on the crystallite growth and phase change of electrodeposited CdSe coatings on ZnO nanowires during annealing. Both in situ transmission electron microscopy (TEM) and x-ray diffraction (XRD) reveal that the nanocrystal size increases from ˜3 to ˜10 nm upon annealing at 350 °C for 1 h and then to more than 30 nm during another 1 h at 400 °C, exhibiting two distinct growth regimes. Nanocrystal growth occurs together with a structural change from zinc blende to wurtzite. The structural transition begins at 350 °C, which results in the formation of stacking faults. Increased crystallite size, comparable to the coating thickness, can improve charge separation in extremely thin absorber solar cells. We demonstrate a nearly two-fold improvement in power conversion efficiency upon annealing.

Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm -3 carrier density, and ~0.1 cm 2 V -1 s -1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstratemore » the potential application of infiltration synthesis in fabricating metal oxide electronic devices.« less

Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

DOE PAGES

Chang-Yong Nam; Stein, Aaron; Kisslinger, Kim; ...

2015-11-17

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm -3 carrier density, and ~0.1 cm 2 V -1 s -1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstratemore » the potential application of infiltration synthesis in fabricating metal oxide electronic devices.« less

Dielectrophoretic alignment of metal and metal oxide nanowires and nanotubes: a universal set of parameters for bridging prepatterned microelectrodes.

PubMed

Maijenburg, A W; Maas, M G; Rodijk, E J B; Ahmed, W; Kooij, E S; Carlen, E T; Blank, D H A; ten Elshof, J E

2011-03-15

Nanowires and nanotubes were synthesized from metals and metal oxides using templated cathodic electrodeposition. With templated electrodeposition, small structures are electrodeposited using a template that is the inverse of the final desired shape. Dielectrophoresis was used for the alignment of the as-formed nanowires and nanotubes between prepatterned electrodes. For reproducible nanowire alignment, a universal set of dielectrophoresis parameters to align any arbitrary nanowire material was determined. The parameters include peak-to-peak potential and frequency, thickness of the silicon oxide layer, grounding of the silicon substrate, and nature of the solvent medium used. It involves applying a field with a frequency >10(5) Hz, an insulating silicon oxide layer with a thickness of 2.5 μm or more, grounding of the underlying silicon substrate, and the use of a solvent medium with a low dielectric constant. In our experiments, we obtained good results by using a peak-to-peak potential of 2.1 V at a frequency of 1.2 × 10(5) Hz. Furthermore, an indirect alignment technique is proposed that prevents short circuiting of nanowires after contacting both electrodes. After alignment, a considerably lower resistivity was found for ZnO nanowires made by templated electrodeposition (2.2-3.4 × 10(-3) Ωm) compared to ZnO nanorods synthesized by electrodeposition (10 Ωm) or molecular beam epitaxy (MBE) (500 Ωm). Copyright © 2010 Elsevier Inc. All rights reserved.

In2O3-ZnO heterostructure development in electrical and photoluminescence properties of In2O3 1-D nanostructures

NASA Astrophysics Data System (ADS)

Shariati, M.; Ghafouri, V.

2014-05-01

Indium Oxide quasi one-dimensional (1D) nanostructures known as nanowires and nanorods synthesis using the thermal evaporation method, has been articulated. To nucleate growth sites, substrate seeding promoted 1D nanostructures growth. The catalyst-mediated growth mechanism showed more favorable morphologies and physical properties in under vacuum conditions associated with bottom-up technique. Scanning electron microscopy (SEM) results showed that the Zn-doped 1D nanostructures had spherical caps. The X-ray diffraction (XRD) pattern and energy-dispersive X-ray (EDX) spectrum indicated that these caps intensively associated with ZnO. Therefore, it was reasonable that the vapor-liquid-solid mechanism (VLS) was responsible for the growth of the In2O3-ZnO heterostructure nanowires. This technique enhances optical and electrical properties in nanostructures. The photoluminescence (PL) analysis in Zn-doped In2O3 nanowires and nanorods shows that the intensity of the visible and UV-region emissions overwhelmingly increases and resistance measurement professes the improvement of linear conductance in VLS growth mechanism.

Additional compound semiconductor nanowires for photonics

NASA Astrophysics Data System (ADS)

Ishikawa, F.

2016-02-01

GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

Comparative study of textured and epitaxial ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.

2000-06-01

ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.

Top-down synthesized TiO2 nanowires as a solid matrix for surface-assisted laser desorption/ionization time-of-flight (SALDI-TOF) mass spectrometry.

PubMed

Kim, Jo-Il; Park, Jong-Min; Hwang, Seung-Ju; Kang, Min-Jung; Pyun, Jae-Chul

2014-07-11

Top-down synthesized TiO2 nanowires are presented as an ideal solid matrix to analyze small biomolecules at a m/z of less than 500. The TiO2 nanowires were synthesized as arrays using a modified hydrothermal process directly on the surface of a Ti plate. Finally, the feasibility of the TiO2 nanowires in the anatase phase as a solid matrix. The crystal and electronic structures of the top-down TiO2 nanowires were analyzed at each step of the hydrothermal process, and the optimal TiO2 nanowires were identified by checking their performance toward the ionization of analytes in surface-assisted laser desorption/ionization time-of-flight (SALDI-TOF) mass spectrometry. Finally, the feasibility of the TiO2 nanowires in the anatase phase as a solid matrix for SALDI-TOF mass spectrometry was demonstrated using eight types of amino acids and peptides as model analytes. Copyright © 2014 Elsevier B.V. All rights reserved.

3D plasmonic transducer based on gold nanoparticles produced by laser ablation on silica nanowires

NASA Astrophysics Data System (ADS)

Gontad, F.; Caricato, A. P.; Manera, M. G.; Colombelli, A.; Resta, V.; Taurino, A.; Cesaria, M.; Leo, C.; Convertino, A.; Klini, A.; Perrone, A.; Rella, R.; Martino, M.

2016-05-01

Silica two-dimensional substrates and nanowires (NWs) forests have been successfully decorated with Au nanoparticles (NPs) through laser ablation by using a pulsed ArF excimer laser, for sensor applications. A uniform coverage of both substrate surfaces with NPs has been achieved controlling the number of laser pulses. The annealing of the as-deposited particles resulted in a uniform well-defined distribution of spherical NPs with an increased average diameter up to 25 nm. The deposited samples on silica NWs forest present a very good plasmonic resonance which resulted to be very sensitive to the changes of the environment (ethanol/water solutions with increasing concentration of ethanol) allowing the detection of changes on the second decimal digit of the refractive index, demonstrating its potentiality for further biosensing functionalities.

Comparison of TiO₂ and ZnO solar cells sensitized with an indoline dye: time-resolved laser spectroscopy studies of partial charge separation processes.

PubMed

Sobuś, Jan; Burdziński, Gotard; Karolczak, Jerzy; Idígoras, Jesús; Anta, Juan A; Ziółek, Marcin

2014-03-11

Time-resolved laser spectroscopy techniques in the time range from femtoseconds to seconds were applied to investigate the charge separation processes in complete dye-sensitized solar cells (DSC) made with iodide/iodine liquid electrolyte and indoline dye D149 interacting with TiO2 or ZnO nanoparticles. The aim of the studies was to explain the differences in the photocurrents of the cells (3-4 times higher for TiO2 than for ZnO ones). Electrochemical impedance spectroscopy and nanosecond flash photolysis studies revealed that the better performance of TiO2 samples is not due to the charge collection and dye regeneration processes. Femtosecond transient absorption results indicated that after first 100 ps the number of photoinduced electrons in the semiconductor is 3 times higher for TiO2 than for ZnO solar cells. Picosecond emission studies showed that the lifetime of the D149 excited state is about 3 times longer for ZnO than for TiO2 samples. Therefore, the results indicate that lower performance of ZnO solar cells is likely due to slower electron injection. The studies show how to correlate the laser spectroscopy methodology with global parameters of the solar cells and should help in better understanding of the behavior of alternative materials for porous electrodes for DSC and related devices.

Direct writing of 150 nm gratings and squares on ZnO crystal in water by using 800 nm femtosecond laser.

PubMed

Liu, Jukun; Jia, Tianqing; Zhou, Kan; Feng, Donghai; Zhang, Shian; Zhang, Hongxin; Jia, Xin; Sun, Zhenrong; Qiu, Jianrong

2014-12-29

We present a controllable fabrication of nanogratings and nanosquares on the surface of ZnO crystal in water based on femtosecond laser-induced periodic surface structures (LIPSS). The formation of nanogrooves depends on both laser fluence and writing speed. A single groove with width less than 40 nm and double grooves with distance of 150 nm have been produced by manipulating 800 nm femtosecond laser fluence. Nanogratings with period of 150 nm, 300 nm and 1000 nm, and nanosquares with dimensions of 150 × 150 nm² were fabricated by using this direct femtosecond laser writing technique.

Thermal diffusivity of diamond nanowires studied by laser assisted atom probe tomography

NASA Astrophysics Data System (ADS)

Arnoldi, L.; Spies, M.; Houard, J.; Blum, I.; Etienne, A.; Ismagilov, R.; Obraztsov, A.; Vella, A.

2018-04-01

The thermal properties of single-crystal diamond nanowires (NWs) have been calculated from first principles but have never been measured experimentally. Taking advantage of the sharp geometry of samples analyzed in a laser assisted atom probe, this technique is used to measure the thermal diffusivity of a single NW at low temperature (<300 K). The obtained value is in good agreement with the ab-initio calculations and confirms that thermal diffusivity in nanoscale samples is lower than in bulk samples. The results impact the design and integration of diamond NWs and nanoneedles in nanoscale devices for heat dissipation.

In situ detection of the Zn(2+) release process of ZnO NPs in tumour cells by confocal laser scanning fluorescence microscopy.

PubMed

Song, Wenshuang; Tang, Xiaoling; Li, Yong; Sun, Yang; Kong, Jilie; Qingguang, Ren

2016-08-01

The use of zinc oxide (ZnO) nanoparticles (NPs) for cancer is not yet clear for human clinical applications, which is primarily due to the lack of a better understanding of the action mechanisms and cellular consequences of the direct exposure of cells to these NPs. In this work, the authors have selected zinquin ethyl ester, a Zn(2+)-specific fluorescent molecular probe, to efficiently differentiate ZnO NPs and Zn(2+), and combined with confocal laser scanning microscopy (CLSM) to in situ study the Zn(2+) release process of ZnO NPs in cancer cell system through detecting the change of Zn(2+) level over time. During the experiments, the authors have designed the test group ZnO-2 in addition to assess the influence of a long-term storage on the characteristics of ZnO NPs in aqueous solution, and the Zn(2+) release process of ZnO NPs in cancer cell system. After three-month storage at room temperature, the release process became earlier and faster, which was consistent with previous results of transmission electron microscope, UV-Vis and PL spectra. It is a good detection method that combination of Zn(2+)-specific fluorescent molecular probe and CLSM, which will be helpful for ZnO NPs using in clinical research.

Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Chang-Yong, E-mail: cynam@bnl.gov; Stein, Aaron; Kisslinger, Kim

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼10{sup 19 }cm{sup −3} carrier density, and ∼0.1 cm{sup 2} V{sup −1} s{sup −1} electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate themore » potential application of infiltration synthesis in fabricating metal oxide electronic devices.« less

Method of fabricating vertically aligned group III-V nanowires

DOEpatents

Wang, George T; Li, Qiming

2014-11-25

A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

Silicon nanowires: where mechanics and optics meet at the nanoscale.

PubMed

Ramos, Daniel; Gil-Santos, Eduardo; Malvar, Oscar; Llorens, Jose M; Pini, Valerio; San Paulo, Alvaro; Calleja, Montserrat; Tamayo, Javier

2013-12-06

Mechanical transducers based on nanowires promise revolutionary advances in biological sensing and force microscopy/spectroscopy. A crucial step is the development of simple and non-invasive techniques able to detect displacements with subpicometer sensitivity per unit bandwidth. Here, we design suspended tapered silicon nanowires supporting a range of optical resonances that confine and efficiently scatter light in the visible range. Then, we develop an optical method for efficiently coupling the evanescent field to the regular interference pattern generated by an incoming laser beam and the reflected beam from the substrate underneath the nanowire. This optomechanical coupling is here applied to measure the displacement of 50 nm wide nanowires with sensitivity on the verge of 1 fm/Hz(1/2) at room temperature with a simple laser interferometry set-up. This method opens the door to the measurement of the Brownian motion of ultrashort nanowires for the detection of single biomolecular recognition events in liquids, and single molecule spectroscopy in vacuum.

UV radiation and CH4 gas detection with a single ZnO:Pd nanowire

NASA Astrophysics Data System (ADS)

Lupan, O.; Adelung, R.; Postica, V.; Ababii, N.; Chow, L.; Viana, B.; Pauporté, T.

2017-02-01

There is an increasing demand for sensors to monitor environmental levels of ultraviolet (UV) radiation and pollutant gases. In this work, an individual nanowire of Pd modified ZnO nanowire (ZnO:Pd NW) was integrated in a nanosensor device for efficient and fast detection of UV light and CH4 gas at room temperature. Crystalline ZnO:Pd nanowire/nanorod arrays were synthesized onto fluorine doped tin oxide (FTO) substrates by electrochemical deposition (ECD) at relative low-temperatures (90 °C) with different concentrations of PdCl2 in electrolyte solution and investigated by SEM and EDX. Nanodevices were fabricated using dual beam focused electron/ion beam (FIB/SEM) system and showed improved UV radiation response compared to pristine ZnO NW, reported previously by our group. The UV response was increased by one order in magnitude (≈ 11) for ZnO:Pd NW. Gas sensing measurements demonstrated a higher gas response and rapidity to methane (CH4 gas, 100 ppm) at room temperature, showing promising results for multifunctional applications. Also, due to miniature size and ultra-low power consumption of these sensors, it is possible to integrate them into portable devices easily, such as smartphones, digital clock, flame detection, missile lunching and other smart devices.

Enhanced optical properties due to indium incorporation in zinc oxide nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, S.; Mukherjee, S.; Sarkar, K.

Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 × 10{sup 19 }cm{sup −3} for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurementsmore » confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism.« less

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator.

PubMed

Kim, Hyunseok; Lee, Wook-Jae; Farrell, Alan C; Balgarkashi, Akshay; Huffaker, Diana L

2017-09-13

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Increased x-ray conversion efficiency from ultra high contrast, relativistic laser pulse irradiation of large aspect ratio, vertically aligned nanowires

NASA Astrophysics Data System (ADS)

Hollinger, R. C.; Bargsten, C.; Shlyaptsev, V. N.; Kaymak, V.; Pukhov, A.; Capeluto, M. G.; Wang, Y.; Wang, S.; Rockwood, A.; Curtis, A.; Rocca, J. J.

2016-10-01

Recent experiments at Colorado State University have shown that the effective trapping of clean, Joule-level fs laser pulses of relativistic intensity in arrays of high aspect ratio aligned nanowire creates multi-kev, near solid density, large scale (>4um deep) plasmas. The drastically decreased radiative life time and increased hydrodynamic cooling time from these plasmas increases the x-ray conversion efficiency. We measured a record conversion efficiency of 10% into hv>1KeV photons (2pi steradians), and of 0.3% for hv>6KeV. The experiments used Au and Ni nanowires of 55nm, 80nm and 100nm in diameter with 12% of solid density irradiated by high contrast (>1012) pulses of 60fs FWHM duration from a frequency doubled Ti:Sa laser at intensities of I =5x1019Wcm-2. We also present preliminary results on x-ray emission from Rhodium nanowires in the 19-22KeV range and demonstrate the potential of this picosecond X-ray source in flash radiography. This work was supported by the Fusion Energy Program, Office of Science of the U.S Department of Energy, and by the Defense Threat Reduction Agency Grant HDTRA-1-10-1-0079.

3-D matrix template-assisted growth of oriented oxide nanowire arrays using glancing angle pulsed laser deposition

NASA Astrophysics Data System (ADS)

Wright, N.; Mateo-Feliciano, D.; Ostoski, A.; Mukherjee, P.; Witanachchi, S.

Nanosphere lithography is a combination of different methods to nanofabrication. In this work nanosphere lithography is used to study the growth of Zinc Oxide Nano-columns (ZnO NCs) on different diameter Silica Nanosphere (SNS) self-assembled templates. ZnO NCs are promising building blocks for many existing and emerging optical, electrical, and piezoelectric devices, specifically, the seeded growth of other oxide materials. Recently, reports have shown a ferroelectric phase of zinc stannate (ZnSnO3) and while lead zirconium titanate oxide (PZT) has been the main material of interest in ferroelectric and piezoelectric applications, the toxicity of lead has been of great concern. The possibility of developing lead free piezoelectric materials is of great interest in the ferroelectric community. Langmuir-Blodgett method was used to construct a self-assembled monolayer of SNSs on silicon substrates. Oriented ZnO NCs were grown on top of the spheres using the glancing angle pulsed laser deposition technique. Columns were formed in a spatially ordered closed-packed hexagonal configuration. Growth of ZnO NCs was studied as function of ambient Oxygen pressure with SNS size ranging from 250-1000 nm. Cross-sectional Scanning Electron Microscopy and X-ray diffraction (XRD) were used to study the template structure. Relative aspect ratios were studied and showed tunability of column dimensions with sphere size. XRD revealed ZnO NC arrays were c-axis oriented with hexagonal wurtzite structure.

On-chip surface modified nanostructured ZnO as functional pH sensors

NASA Astrophysics Data System (ADS)

Zhang, Qing; Liu, Wenpeng; Sun, Chongling; Zhang, Hao; Pang, Wei; Zhang, Daihua; Duan, Xuexin

2015-09-01

Zinc oxide (ZnO) nanostructures are promising candidates as electronic components for biological and chemical applications. In this study, ZnO ultra-fine nanowire (NW) and nanoflake (NF) hybrid structures have been prepared by Au-assisted chemical vapor deposition (CVD) under ambient pressure. Their surface morphology, lattice structures, and crystal orientation were investigated by scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). Two types of ZnO nanostructures were successfully integrated as gate electrodes in extended-gate field-effect transistors (EGFETs). Due to the amphoteric properties of ZnO, such devices function as pH sensors. We found that the ultra-fine NWs, which were more than 50 μm in length and less than 100 nm in diameter, performed better in the pH sensing process than NW-NF hybrid structures because of their higher surface-to-volume ratio, considering the Nernst equation and the Gouy-Chapman-Stern model. Furthermore, the surface coating of (3-Aminopropyl)triethoxysilane (APTES) protects ZnO nanostructures in both acidic and alkaline environments, thus enhancing the device stability and extending its pH sensing dynamic range.

Rapid, High-Throughput, and Direct Molecular Beacon Delivery to Human Cancer Cells Using a Nanowire-Incorporated and Pneumatic Pressure-Driven Microdevice.

PubMed

Kim, Kyung Hoon; Kim, Jung; Choi, Jong Seob; Bae, Sunwoong; Kwon, Donguk; Park, Inkyu; Kim, Do Hyun; Seo, Tae Seok

2015-12-01

Tracking and monitoring the intracellular behavior of mRNA is of paramount importance for understanding real-time gene expression in cell biology. To detect specific mRNA sequences, molecular beacons (MBs) have been widely employed as sensing probes. Although numerous strategies for MB delivery into the target cells have been reported, many issues such as the cytotoxicity of the carriers, dependence on the random probability of MB transfer, and critical cellular damage still need to be overcome. Herein, we have developed a nanowire-incorporated and pneumatic pressure-driven microdevice for rapid, high-throughput, and direct MB delivery to human breast cancer MCF-7 cells to monitor survivin mRNA expression. The proposed microdevice is composed of three layers: a pump-associated glass manifold layer, a monolithic polydimethylsiloxane (PDMS) membrane, and a ZnO nanowire-patterned microchannel layer. The MB is immobilized on the ZnO nanowires by disulfide bonding, and the glass manifold and PDMS membrane serve as a microvalve, so that the cellular attachment and detachment on the MB-coated nanowire array can be manipulated. The combination of the nanowire-mediated MB delivery and the microvalve function enable the transfer of MB into the cells in a controllable way with high cell viability and to detect survivin mRNA expression quantitatively after docetaxel treatment. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Template-Assisted Hydrothermal Growth of Aligned Zinc Oxide Nanowires for Piezoelectric Energy Harvesting Applications

PubMed Central

2016-01-01

A flexible and robust piezoelectric nanogenerator (NG) based on a polymer-ceramic nanocomposite structure has been successfully fabricated via a cost-effective and scalable template-assisted hydrothermal synthesis method. Vertically aligned arrays of dense and uniform zinc oxide (ZnO) nanowires (NWs) with high aspect ratio (diameter ∼250 nm, length ∼12 μm) were grown within nanoporous polycarbonate (PC) templates. The energy conversion efficiency was found to be ∼4.2%, which is comparable to previously reported values for ZnO NWs. The resulting NG is found to have excellent fatigue performance, being relatively immune to detrimental environmental factors and mechanical failure, as the constituent ZnO NWs remain embedded and protected inside the polymer matrix. PMID:27172933

Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires

PubMed Central

2013-01-01

Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO. PMID:23590803

Single Step Laser Transfer and Laser Curing of Ag NanoWires: A Digital Process for the Fabrication of Flexible and Transparent Microelectrodes.

PubMed

Zacharatos, Filimon; Karvounis, Panagiotis; Theodorakos, Ioannis; Hatziapostolou, Antonios; Zergioti, Ioanna

2018-06-19

Ag nanowire (NW) networks have exquisite optical and electrical properties which make them ideal candidate materials for flexible transparent conductive electrodes. Despite the compatibility of Ag NW networks with laser processing, few demonstrations of laser fabricated Ag NW based components currently exist. In this work, we report on a novel single step laser transferring and laser curing process of micrometer sized pixels of Ag NW networks on flexible substrates. This process relies on the selective laser heating of the Ag NWs induced by the laser pulse energy and the subsequent localized melting of the polymeric substrate. We demonstrate that a single laser pulse can induce both transfer and curing of the Ag NW network. The feasibility of the process is confirmed experimentally and validated by Finite Element Analysis simulations, which indicate that selective heating is carried out within a submicron-sized heat affected zone. The resulting structures can be utilized as fully functional flexible transparent electrodes with figures of merit even higher than 100. Low sheet resistance (<50 Ohm/sq) and high visible light transparency (>90%) make the reported process highly desirable for a variety of applications, including selective heating or annealing of nanocomposite materials and laser processing of nanostructured materials on a large variety of optically transparent substrates, such as Polydimethylsiloxane (PDMS).

A semiconductor nanowire Josephson junction microwave laser

NASA Astrophysics Data System (ADS)

Cassidy, Maja; Uilhoorn, Willemijn; Kroll, James; de Jong, Damaz; van Woerkom, David; Nygard, Jesper; Krogstrup, Peter; Kouwenhoven, Leo

We present measurements of microwave lasing from a single Al/InAs/Al nanowire Josephson junction strongly coupled to a high quality factor superconducting cavity. Application of a DC bias voltage to the Josephson junction results in photon emission into the cavity when the bias voltage is equal to a multiple of the cavity frequency. At large voltage biases, the strong non-linearity of the circuit allows for efficient down conversion of high frequency microwave photons down to multiple photons at the fundamental frequency of the cavity. In this regime, the emission linewidth narrows significantly below the bare cavity linewidth to < 10 kHz and real time analysis of the emission statistics shows above threshold lasing with a power conversion efficiency > 50%. The junction-cavity coupling and laser emission can be tuned rapidly via an external gate, making it suitable to be integrated into a scalable qubit architecture as a versatile source of coherent microwave radiation. This work has been supported by the Netherlands Organisation for Scientific Research (NWO/OCW), Foundation for Fundamental Research on Matter (FOM), European Research Council (ERC), and Microsoft Corporation Station Q.

Vibrational spectra of nanowires measured using laser doppler vibrometry and STM studies of epitaxial graphene : an LDRD fellowship report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biedermann, Laura Butler

2009-09-01

A few of the many applications for nanowires are high-aspect ratio conductive atomic force microscope (AFM) cantilever tips, force and mass sensors, and high-frequency resonators. Reliable estimates for the elastic modulus of nanowires and the quality factor of their oscillations are of interest to help enable these applications. Furthermore, a real-time, non-destructive technique to measure the vibrational spectra of nanowires will help enable sensor applications based on nanowires and the use of nanowires as AFM cantilevers (rather than as tips for AFM cantilevers). Laser Doppler vibrometry is used to measure the vibration spectra of individual cantilevered nanowires, specifically multiwalled carbonmore » nanotubes (MWNTs) and silver gallium nanoneedles. Since the entire vibration spectrum is measured with high frequency resolution (100 Hz for a 10 MHz frequency scan), the resonant frequencies and quality factors of the nanowires are accurately determined. Using Euler-Bernoulli beam theory, the elastic modulus and spring constant can be calculated from the resonance frequencies of the oscillation spectrum and the dimensions of the nanowires, which are obtained from parallel SEM studies. Because the diameters of the nanowires studied are smaller than the wavelength of the vibrometer's laser, Mie scattering is used to estimate the lower diameter limit for nanowires whose vibration can be measured in this way. The techniques developed in this thesis can be used to measure the vibrational spectra of any suspended nanowire with high frequency resolution Two different nanowires were measured - MWNTs and Ag{sub 2}Ga nanoneedles. Measurements of the thermal vibration spectra of MWNTs under ambient conditions showed that the elastic modulus, E, of plasma-enhanced chemical vapor deposition (PECVD) MWNTs is 37 {+-} 26 GPa, well within the range of E previously reported for CVD-grown MWNTs. Since the Ag{sub 2}Ga nanoneedles have a greater optical scattering efficiency than

Synthesis of p-type ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Look, D. C.; Wrobel, J. M.; Jeong, H. M.; White, H. W.

2000-06-01

p-Type ZnO obtained by arsenic (As) doping is reported for the first time. Arsenic-doped ZnO (ZnO : As) films have been deposited on (0 0 1)-GaAs substrates by pulsed laser ablation. The process of synthesizing p-type ZnO : As films was performed in an ambient gas of ultra-pure (99.999%) oxygen. The ambient gas pressure was 35 mTorr with the substrate temperature in the range 300-450°C. ZnO films grown at 400°C and 450°C are p-type and As is a good acceptor. The acceptor peak is located at 3.32 eV and its binding energy is about 100 meV. Acceptor concentrations of As atoms in ZnO films were in the range from high 10 17 to high 10 21 atoms/cm 3 as determined by secondary ion mass spectroscopy (SIMS) and Hall effect measurements.

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

PubMed Central

Kuo, Chin-Guo; Chen, Jung-Hsuan; Chao, Yi-Chieh; Chen, Po-Lin

2017-01-01

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 1019 cm−3 and 24.7 cm2∙V−1∙s−1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm. PMID:29295573

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas.

PubMed

Kuo, Chin-Guo; Chen, Jung-Hsuan; Chao, Yi-Chieh; Chen, Po-Lin

2017-12-25

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 10 19 cm -3 and 24.7 cm²∙V -1 ∙s -1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

NASA Astrophysics Data System (ADS)

Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition.

PubMed

Mino, Lorenzo; Gianolio, Diego; Bardelli, Fabrizio; Prestipino, Carmelo; Senthil Kumar, E; Bellarmine, F; Ramanjaneyulu, M; Lamberti, Carlo; Ramachandra Rao, M S

2013-09-25

Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni(0) nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

Decoration of silica nanowires with gold nanoparticles through ultra-short pulsed laser deposition

NASA Astrophysics Data System (ADS)

Gontad, F.; Caricato, A. P.; Cesaria, M.; Resta, V.; Taurino, A.; Colombelli, A.; Leo, C.; Klini, A.; Manousaki, A.; Convertino, A.; Rella, R.; Martino, M.; Perrone, A.

2017-10-01

The ablation of a metal target at laser energy densities in the range of 1-10 TW/cm2 leads to the generation of nanoparticles (NP) of the ablated material. This aspect is of particular interest if the immobilization of NPs on three-dimensional (3D) substrates is necessary as for example in sensing applications. In this work the deposition of Au NP by irradiation of a Au bulk target with a sub-picosecond laser beam (500 fs; 248 nm; 10 Hz) on 2D (silica and Si(100)) and 3D substrates (silica nanowire forests) is reported for different number of laser pulses (500, 1000, 1500, 2000, 2500). A uniform coverage of small Au NPs (with a diameter of few nm) on both kinds of substrates has been obtained using a suitable number of laser pulses. The presence of spherical droplets, with a diameter ranging from tens of nm up to few μm was also detected on the substrate surface and their presence can be explained by the weak electron-phonon coupling of Au. The optical characterization of the samples on 2D and 3D substrates evidenced the surface plasmon resonance peak characteristic of the Au NPs although further improvements of the size-distribution are necessary for future applications in sensing devices.

Shape-dependent plasma-catalytic activity of ZnO nanomaterials coated on porous ceramic membrane for oxidation of butane.

PubMed

Sanjeeva Gandhi, M; Mok, Young Sun

2014-12-01

In order to explore the effects of the shape of ZnO nanomaterials on the plasma-catalytic decomposition of butane and the distribution of byproducts, three types of ZnO nanomaterials (nanoparticles (NPs), nanorods (NRs) and nanowires (NWs)) were prepared and coated on multi-channel porous alumina ceramic membrane. The structures and morphologies of the nanomaterials were confirmed by X-ray diffraction method and scanning electron microscopy. The observed catalytic activity of ZnO in the oxidative decomposition of butane was strongly shape-dependent. It was found that the ZnO NWs exhibited higher catalytic activity than the other nanomaterials and could completely oxidize butane into carbon oxides (COx). When using the bare or ZnO NPs-coated ceramic membrane, several unwanted partial oxidation and decomposition products like acetaldehyde, acetylene, methane and propane were identified during the decomposition of butane. When the ZnO NWs- or ZnO NRs-coated membrane was used, however, the formation of such unwanted byproducts except methane was completely avoided, and full conversion into COx was achieved. Better carbon balance and COx selectivity were obtained with the ZnO NWs and NRs than with the NPs. Copyright © 2014 Elsevier Ltd. All rights reserved.

Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

NASA Astrophysics Data System (ADS)

Chen, Yong; Luo, Guanghong; Diao, Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

2007-04-01

Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3×ω Nd:YAG laser in air, SF6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ~2 µm in SF6 gas and to ~5 µm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (~10×) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits.

Zinc Vacancy Formation and its Effect on the Conductivity of ZnO

NASA Astrophysics Data System (ADS)

Khan, Enamul; Weber, Marc; Langford, Steve; Dickinson, Tom

2010-03-01

Exposing single crystal ZnO to 193-nm ArF excimer laser radiation can produce metallic zinc nanoparticles along the surface. The particle production mechanism appears to involve interstitial-vacancy pair formation in the near-surface bulk. Conductivity measurements made with one probe inside the laser spot and the other outside show evidence for rectifying behavior. Positron annihilation spectroscopy confirms the presence of Zn vacancies. We suggest that Zn vacancies are a possible source of p-type behavior in irradiated ZnO. Quadrupole mass spectroscopy shows that both oxygen and zinc are emitted during irradiation. Electron-hole pair production has previously been invoked to account for particle desorption from ZnO during UV illumination. Our results suggest that preexisting and laser-generated defects play a critical role in particle desorption and Zn vacancy formation.

Simulation the spatial resolution of an X-ray imager based on zinc oxide nanowires in anodic aluminium oxide membrane by using MCNP and OPTICS Codes

NASA Astrophysics Data System (ADS)

Samarin, S. N.; Saramad, S.

2018-05-01

The spatial resolution of a detector is a very important parameter for x-ray imaging. A bulk scintillation detector because of spreading of light inside the scintillator does't have a good spatial resolution. The nanowire scintillators because of their wave guiding behavior can prevent the spreading of light and can improve the spatial resolution of traditional scintillation detectors. The zinc oxide (ZnO) scintillator nanowire, with its simple construction by electrochemical deposition in regular hexagonal structure of Aluminum oxide membrane has many advantages. The three dimensional absorption of X-ray energy in ZnO scintillator is simulated by a Monte Carlo transport code (MCNP). The transport, attenuation and scattering of the generated photons are simulated by a general-purpose scintillator light response simulation code (OPTICS). The results are compared with a previous publication which used a simulation code of the passage of particles through matter (Geant4). The results verify that this scintillator nanowire structure has a spatial resolution less than one micrometer.

Rapid Fabrication of Silver Nanowires through Photoreduction of Silver Nitrate from an Anodic-Aluminum-Oxide Template

NASA Astrophysics Data System (ADS)

Lin, Yu-Hsuan; Chen, Kun-Tso; Ho, Jeng-Rong

2011-06-01

A method for rapidly fabricating dense and high-aspect-ratio silver nanowires, with wire diameter of 200 nm and wire length more than 30 µm, is reported. The fabrication process simply involves filling the silver nitrate solution into the pores of an anodic-aluminum-oxide (AAO) membrane through capillary attraction and irradiating the dried template AAO membrane using a pulsed ArF excimer laser. Through varying the thickness and pore diameter of the employed AAO membrane, the primary dimensions of the targeted silver nanowires can be plainly specified; and, by amending the initial concentration of the silver nitrate solution and adjusting the laser operation parameters, laser fluence and number of laser pulses, the surface morphology and size of the resulting nanowires can be finely regulated. The wire formation mechanism is considered through two stages: the period of precipitation of silver particles from the dried silver nitrate film through the laser-induced photoreduction; and, the phase of clustering, merging and fusing of the reduced particles to form nanowires in the template pores by the thermal energy owing to photothermal effect. This approach is straightforward and takes the advantage that all the fabrication processes can be executed in an ambient environment and at room temperature. In addition, by the excellence in local processing that the laser possesses, this method is suitable for precisely growing nanowires.

Customization of Protein Single Nanowires for Optical Biosensing.

PubMed

Sun, Yun-Lu; Sun, Si-Ming; Wang, Pan; Dong, Wen-Fei; Zhang, Lei; Xu, Bin-Bin; Chen, Qi-Dai; Tong, Li-Min; Sun, Hong-Bo

2015-06-24

An all-protein single-nanowire optical biosensor is constructed by a facile and general femtosecond laser direct writing approach with nanoscale structural customization. As-formed protein single nanowires show excellent optical properties (fine waveguiding performance and bio-applicable transmission windows), and are utilized as evanescent optical nanobiosensors for label-free biotin detection. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stettner, T., E-mail: Thomas.Stettner@wsi.tum.de, E-mail: Gregor.Koblmueller@wsi.tum.de, E-mail: Jonathan.Finley@wsi.tum.de; Zimmermann, P.; Loitsch, B.

2016-01-04

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as ∼2.4 kW/cm{sup 2} for the multiple QW NW laser. This confirms that themore » individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300 K, opening promising new avenues for efficient III–V semiconductor NW lasers with embedded low-dimensional gain media.« less

Diamond nanowires for highly sensitive matrix-free mass spectrometry analysis of small molecules.

PubMed

Coffinier, Yannick; Szunerits, Sabine; Drobecq, Hervé; Melnyk, Oleg; Boukherroub, Rabah

2012-01-07

This paper reports on the use of boron-doped diamond nanowires (BDD NWs) as an inorganic substrate for matrix-free laser desorption/ionization mass spectrometry (LDI-MS) analysis of small molecules. The diamond nanowires are prepared by reactive ion etching (RIE) with oxygen plasma of highly boron-doped (the boron level is 10(19) B cm(-3)) or undoped nanocrystalline diamond substrates. The resulting diamond nanowires are coated with a thin silicon oxide layer that confers a superhydrophilic character to the surface. To minimize droplet spreading, the nanowires were chemically functionalized with octadecyltrichlorosilane (OTS) and then UV/ozone treated to reach a final water contact angle of 120°. The sub-bandgap absorption under UV laser irradiation and the heat confinement inside the nanowires allowed desorption/ionization, most likely via a thermal mechanism, and mass spectrometry analysis of small molecules. A detection limit of 200 zeptomole for verapamil was demonstrated.

Piezo-Phototronic Matrix via a Nanowire Array.

PubMed

Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

2017-12-01

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanowire Photonic Systems

DTIC Science & Technology

2009-12-22

b) From top to bottom, (i) AFM topograph of the p-i-n SiNW, (ii) plot of EFM phase-shift vs . position recorded along the nanowire axis and (iii...c) Current vs . applied voltage curve for a typical SiNW p-i-n junction at room temperature. (d) Current vs . applied reverse voltage data of a p-i...incident laser power. Iph vs . laser power (Figure 3c) measured at 22, 20 and 18 V show linear dependences with slopes of 1.16, 0.94 and 0.72 nA/μW

The electronic structures of AlN and InN wurtzite nanowires

NASA Astrophysics Data System (ADS)

Xiong, Wen; Li, Dong-Xiao

2017-07-01

We derive the relations between the analogous seven Luttinger-Kohn parameters and six Rashba-Sheka-Pikus parameters for wurtzite semiconductors, which can be used to investigate the electronic structures of some wurtzite semiconductors such as AlN and InN materials, including their low-dimensional structures. As an example, the electronic structures of AlN and InN nanowires are calculated by using the derived relations and six-band effective-mass k · p theory. Interestingly, it is found that the ground hole state of AlN nanowires is always a pure S state whether the radius R is small (1 nm) or large (6 nm), and the ground hole state only contains | Z 〉 Bloch orbital component. Therefore, AlN nanowires is the ideal low-dimensional material for the production of purely linearly polarized π light, unlike ZnO nanowires, which emits plane-polarized σ light. However, the ground hole state of InN nanowires can be tuned from a pure S state to a mixed P state when the radius R is larger than 2.6 nm, which will make the polarized properties of the lowest optical transition changes from linearly polarized π light to plane-polarized σ light. Meanwhile, the valence band structures of InN nanowires will present strong band-crossings when the radius R increases to 6 nm, and through the detail analysis of possible transitions of InN nanowires at the Γ point, we find some of the neighbor optical transitions are almost degenerate, because the spin-orbit splitting energy of InN material is only 0.001 eV. Therefore, it is concluded that the electronic structures and optical properties of InN nanowires present great differences with that of AlN nanowires.

Origin of luminescence from ZnO/CdS core/shell nanowire arrays

NASA Astrophysics Data System (ADS)

Wang, Zhiqiang; Wang, Jian; Sham, Tsun-Kong; Yang, Shaoguang

2014-07-01

Chemical imaging, electronic structure and optical properties of ZnO/CdS nano-composites have been investigated using scanning transmission X-ray microscopy (STXM), X-ray absorption near-edge structure (XANES) and X-ray excited optical luminescence (XEOL) spectroscopy. STXM and XANES results confirm that the as-prepared product is ZnO/CdS core/shell nanowires (NWs), and further indicate that ZnS was formed on the surface of ZnO NWs as the interface between ZnO and CdS. The XEOL from ZnO/CdS NW arrays exhibits one weak ultraviolet (UV) emission at 375 nm, one strong green emission at 512 nm, and two broad infrared (IR) emissions at 750 and 900 nm. Combining XANES and XEOL, it is concluded that the UV luminescence is the near band gap emission (BGE) of ZnO; the green luminescence comes from both the BGE of CdS and defect emission (DE, zinc vacancies) of ZnO; the IR luminescence is attributed to the DE (bulk defect related to the S site) of CdS; ZnS contributes little to the luminescence of the ZnO/CdS NW arrays. Interestingly, the BGE and DE from oxygen vacancies of ZnO in the ZnO/CdS nano-composites are almost entirely quenched, while DE from zinc vacancies changes little.Chemical imaging, electronic structure and optical properties of ZnO/CdS nano-composites have been investigated using scanning transmission X-ray microscopy (STXM), X-ray absorption near-edge structure (XANES) and X-ray excited optical luminescence (XEOL) spectroscopy. STXM and XANES results confirm that the as-prepared product is ZnO/CdS core/shell nanowires (NWs), and further indicate that ZnS was formed on the surface of ZnO NWs as the interface between ZnO and CdS. The XEOL from ZnO/CdS NW arrays exhibits one weak ultraviolet (UV) emission at 375 nm, one strong green emission at 512 nm, and two broad infrared (IR) emissions at 750 and 900 nm. Combining XANES and XEOL, it is concluded that the UV luminescence is the near band gap emission (BGE) of ZnO; the green luminescence comes from both the

Comparison of Ti-Based Coatings on Silicon Nanowires for Phosphopeptide Enrichment and Their Laser Assisted Desorption/Ionization Mass Spectrometry Detection

PubMed Central

Kurylo, Ievgen; Hamdi, Abderrahmane; Addad, Ahmed; Coffinier, Yannick

2017-01-01

We created different TiO2-based coatings on silicon nanowires (SiNWs) by using either thermal metallization or atomic layer deposition (ALD). The fabricated surfaces were characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and reflectivity measurements. Surfaces with different TiO2 based coating thicknesses were then used for phosphopeptide enrichment and subsequent detection by laser desorption/ionization mass spectrometry (LDI-MS). Results showed that the best enrichment and LDI-MS detection were obtained using the silicon nanowires covered with 10 nm of oxidized Ti deposited by means of thermal evaporation. This sample was also able to perform phosphopeptide enrichment and MS detection from serum. PMID:28914806

Bottle-brush-shaped heterostructures of NiO-ZnO nanowires: growth study and sensing properties

NASA Astrophysics Data System (ADS)

Baratto, C.; Kumar, R.; Comini, E.; Ferroni, M.; Campanini, M.

2017-11-01

We present here heterostructured ZnO-NiO nanowires (NWs), constituted by a core of single crystalline ZnO NWs, covered by poly-crystalline NiO nanorods (NRs). The bottle-brush shape was investigated by scanning electron microscopy and transmission electron microscope, confirming that a columnar growth of NiO occurred over the ZnO core, with a preferred orientation of NiO over ZnO NWs. The heterostructured devices are proposed for gas sensing application. Bare ZnO NWs and heterostructured sensors with two different thicknesses of NiO poly-crystalline NRs were analysed for acetone, ethanol, NO2 and H2 detection. All sensors maintained n-type sensing mechanism, with improved sensing performance for lower thickness of NiO, due to high catalytic activity of NiO. The sensing dynamic is also strongly modified by the presence of heterojunction of NiO/ZnO, with a reduction of response and recovery times towards ethanol and acetone at 400 °C.

In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

NASA Astrophysics Data System (ADS)

Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

2016-04-01

Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm-1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls.

Simulation, optimization and testing of a novel high spatial resolution X-ray imager based on Zinc Oxide nanowires in Anodic Aluminium Oxide membrane using Geant4

NASA Astrophysics Data System (ADS)

Esfandi, F.; Saramad, S.

2015-07-01

In this work, a new generation of scintillator based X-ray imagers based on ZnO nanowires in Anodized Aluminum Oxide (AAO) nanoporous template is characterized. The optical response of ordered ZnO nanowire arrays in porous AAO template under low energy X-ray illumination is simulated by the Geant4 Monte Carlo code and compared with experimental results. The results show that for 10 keV X-ray photons, by considering the light guiding properties of zinc oxide inside the AAO template and suitable selection of detector thickness and pore diameter, the spatial resolution less than one micrometer and the detector detection efficiency of 66% are accessible. This novel nano scintillator detector can have many advantages for medical applications in the future.

Metal Induced Growth of Si Thin Films and NiSi Nanowires

DTIC Science & Technology

2010-02-25

Zinc Oxide Over MIG Silicon- We have been studying the formation of ZnO films by RF sputtering. Part of this study deals with...about 50 nm. 15. SUBJECT TERMS Thin film silicon, solar cells, thin film transistors , nanowires, metal induced growth 16. SECURITY CLASSIFICATION...to achieve, µc-Si is more desirable than a-Si due to its increased mobility. Thin film µc-Si is also a popular material for thin film transistors

Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array.

PubMed

Han, Xun; Du, Weiming; Yu, Ruomeng; Pan, Caofeng; Wang, Zhong Lin

2015-12-22

A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate.

PubMed

Behzadirad, Mahmoud; Nami, Mohsen; Wostbrock, Neal; Zamani Kouhpanji, Mohammad Reza; Feezell, Daniel F; Brueck, Steven R J; Busani, Tito

2018-03-27

GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with high optical properties and minimum crystal defects remains a challenge. Here, we present a scalable two-step top-down approach using interferometric lithography, for which parameters can be controlled precisely to achieve highly ordered arrays of nanowires with excellent quality and desired aspect ratios. The wet-etch mechanism is investigated, and the etch rates of m-planes {11̅00} (sidewalls) were measured to be 2.5 to 70 nm/h depending on the Si doping concentration. Using this method, uniform nanowire arrays were achieved over a large area (>10 5 μm 2 ) with an spect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (<1 nm). FDTD modeling demonstrated HE 11 is the dominant transverse mode in the nanowires with a radius of sub-100 nm, and single-mode lasing from vertical cavity nanowire arrays with different doping concentrations on a sapphire substrate was interestingly observed in photoluminescence measurements. High Q-factors of ∼1139-2443 were obtained in nanowire array lasers with a radius and length of 65 nm and 2 μm, respectively, corresponding to a line width of 0.32-0.15 nm (minimum threshold of 3.31 MW/cm 2 ). Our results show that fabrication of high-quality GaN nanowire arrays with adaptable aspect ratio and large-area uniformity is feasible through a top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate.

Structural modulation of nanowire interfaces grown over selectively disrupted single crystal surfaces

NASA Astrophysics Data System (ADS)

Garratt, E.; Nikoobakht, B.

2015-08-01

Recent breakthroughs in deterministic approaches to the fabrication of nanowire arrays have demonstrated the possibility of fabricating such networks using low-cost scalable methods. In this regard, we have developed a scalable growth platform for lateral fabrication of nanocrystals with high precision utilizing lattice match and symmetry. Using this planar architecture, a number of homo- and heterostructures have been demonstrated including ZnO nanowires grown over GaN. The latter combination produces horizontal, epitaxially formed crystals aligned in the plane of the substrate containing a very low number of intrinsic defects. We use such ordered structures as model systems in the interests of gauging the interfacial structural dynamics in relation to external stimuli. Nanosecond pulses of focused ion beams are used to slightly modify the substrate surface and selectively form lattice disorders in the path of nanowire growth to examine the nanocrystal, namely: its directionality and lattice defects. High resolution electron microscopies are used to reveal some interesting structural effects; for instance, a minimum threshold of surface defects that can divert nanowires. We also discuss data indicating formation of surface strains and show their mitigation during the growth process.

Formation of crystalline InGaO₃(ZnO)n nanowires via the solid-phase diffusion process using a solution-based precursor.

PubMed

Guo, Yujie; Van Bilzen, Bart; Locquet, Jean Pierre; Seo, Jin Won

2015-12-11

One-dimensional single crystalline InGaO3(ZnO)n (IGZO) nanostructures have great potential for various electrical and optical applications. This paper demonstrates for the first time, to our knowledge, a non-vacuum route for the synthesis of IGZO nanowires by annealing ZnO nanowires covered with solution-based IGZO precursor. This method results in nanowires with highly periodic IGZO superlattice structure. The phase transition of IGZO precursor during thermal treatment was systematically studied. Transmission electron microscopy studies reveal that the formation of the IGZO structure is driven by anisotropic inter-diffusion of In, Ga, and Zn atoms, and also by the crystallization of the IGZO precursor. Optical measurements using cathodoluminescence and UV-vis spectroscopy confirm that the nanowires consist of the IGZO compound with wide optical band gap and suppressed luminescence.

p-GaN/n-ZnO heterojunction nanowires: optoelectronic properties and the role of interface polarity.

PubMed

Schuster, Fabian; Laumer, Bernhard; Zamani, Reza R; Magén, Cesar; Morante, Joan Ramon; Arbiol, Jordi; Stutzmann, Martin

2014-05-27

In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface are presented. In contrast to homojunctions, an additional energy barrier due to the type-II band alignment hinders the flow of majority charge carriers in this heterojunction. Spontaneous polarization and piezoelectricity are shown to additionally affect the band structure and the location of the recombination region. Proposed as potential UV-LEDs and laser diodes, p-GaN/n-ZnO heterojunction nanowires were fabricated by plasma-assisted molecular beam epitaxy (PAMBE). Atomic resolution annular bright field scanning transmission electron microscopy (STEM) studies reveal an abrupt and defect-free heterointerface with a polarity inversion from N-polar GaN to Zn-polar ZnO. Photoluminescence measurements show strong excitonic UV emission originating from the ZnO-side of the interface as well as stimulated emission in the case of optical pumping above a threshold of 55 kW/cm(2).

Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Viana, Bruno; Lupan, Oleg; Pauporté, Thierry

2011-01-01

The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.

Identification of F impurities in F-doped ZnO by synchrotron X-ray absorption near edge structures

NASA Astrophysics Data System (ADS)

Na-Phattalung, Sutassana; Limpijumnong, Sukit; Min, Chul-Hee; Cho, Deok-Yong; Lee, Seung-Ran; Char, Kookrin; Yu, Jaejun

2018-04-01

Synchrotron X-ray absorption near edge structure (XANES) measurements of F K-edge in conjunction with first-principles calculations are used to identify the local structure of the fluorine (F) atom in F-doped ZnO. The ZnO film was grown by pulsed laser deposition with an Nd:YAG laser, and an oxyfluoridation method was used to introduce F ions into the ZnO films. The measured XANES spectrum of the sample was compared against the first-principles XANES calculations based on various models for local atomic structures surrounding F atoms. The observed spectral features are attributed to ZnF2 and FO defects in wurtzite bulk ZnO.

In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

PubMed Central

Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

2016-01-01

Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm−1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls. PMID:27071382

Optoelectronics: Continuously Spatial-Wavelength-Tunable Nanowire Lasers on a Single Chip

DTIC Science & Technology

2014-01-28

journals (N/A for none) 1. P. L. Nichols, Z. Liu, L. Yin, and C. Z. Ning, CdxPb1- xS Alloy Nanowires and Heterostructures with Simultaneous Emission in Mid...multiple-bandgap solar cells using spatially composition-graded CdxPb1- xS nanowires on a single substrate: a design study, Optics Express (07 2011...Quaternary ZnCdSSe Alloy Nanowires with Tunable Light Emission Between 350 nm and 710 nm on a Single Substrate, (11 2009) C.Z. Ning, A.L. Pan, and

Facile Hydrothermal Preparation of ZNO/CO3O4 Heterogeneous Nanostructures and its Photovoltaic Effect

NASA Astrophysics Data System (ADS)

Wei, Fanan; Jiang, Minlin; Liu, Lianqing

2015-07-01

Photovoltaic technology offers great potential in the replacement of fossil fuel resources, but still suffers from high device fabrication cost. Herein, we attempted to provide a solution to these issues with heterogeneous nanostructures. Firstly, Zinc oxide (ZnO)/cobalt oxide (Co3O4) heterojunction nanowires are prepared through facile fabrication methods. By assembling Co(OH)2 nanoplates on ZnO nanowire arrays, the ZnO/Co3O4 heterogeneous nanostructures are uniformly synthesized on ITO coated glass and wafer. Current (I)-voltage (V) measurement through conductive atomic force microscope shows excellent photovoltaic effect. And, the heterojunction nanostructures shows unprecedented high open circuit voltage. Therefore, the potential application of the heterogeneous nanostructures in solar cells is demonstrated.

Dimensional-Hybrid Structures of 2D Materials with ZnO Nanostructures via pH-Mediated Hydrothermal Growth for Flexible UV Photodetectors.

PubMed

Lee, Young Bum; Kim, Seong Ku; Lim, Yi Rang; Jeon, In Su; Song, Wooseok; Myung, Sung; Lee, Sun Sook; Lim, Jongsun; An, Ki-Seok

2017-05-03

Complementary combination of heterostructures is a crucial factor for the development of 2D materials-based optoelectronic devices. Herein, an appropriate solution for fabricating complementary dimensional-hybrid nanostructures comprising structurally tailored ZnO nanostructures and 2D materials such as graphene and MoS 2 is suggested. Structural features of ZnO nanostructures hydrothermally grown on graphene and MoS 2 are deliberately manipulated by adjusting the pH value of the growing solution, which will result in the formation of ZnO nanowires, nanostars, and nanoflowers. The detailed growth mechanism is further explored for the structurally tailored ZnO nanostructures on the 2D materials. Furthermore, a UV photodetector based on the dimensional-hybrid nanostructures is fabricated, which demonstrates their excellent photocurrent and mechanical durability. This can be understood by the existence of oxygen vacancies and oxygen-vacancies-induced band narrowing in the ZnO nanostructures, which is a decisive factor for determining their photoelectrical properties in the hybrid system.

Defect-induced magnetic order in pure ZnO films

NASA Astrophysics Data System (ADS)

Khalid, M.; Ziese, M.; Setzer, A.; Esquinazi, P.; Lorenz, M.; Hochmuth, H.; Grundmann, M.; Spemann, D.; Butz, T.; Brauer, G.; Anwand, W.; Fischer, G.; Adeagbo, W. A.; Hergert, W.; Ernst, A.

2009-07-01

We have investigated the magnetic properties of pure ZnO thin films grown under N2 pressure on a -, c -, and r -plane Al2O3 substrates by pulsed-laser deposition. The substrate temperature and the N2 pressure were varied from room temperature to 570°C and from 0.007 to 1.0 mbar, respectively. The magnetic properties of bare substrates and ZnO films were investigated by SQUID magnetometry. ZnO films grown on c - and a -plane Al2O3 substrates did not show significant ferromagnetism. However, ZnO films grown on r -plane Al2O3 showed reproducible ferromagnetism at 300 K when grown at 300-400°C and 0.1-1.0 mbar N2 pressure. Positron annihilation spectroscopy measurements as well as density-functional theory calculations suggest that the ferromagnetism in ZnO films is related to Zn vacancies.

Satellite laser ranging using superconducting nanowire single-photon detectors at 1064  nm wavelength.

PubMed

Xue, Li; Li, Zhulian; Zhang, Labao; Zhai, Dongsheng; Li, Yuqiang; Zhang, Sen; Li, Ming; Kang, Lin; Chen, Jian; Wu, Peiheng; Xiong, Yaoheng

2016-08-15

Satellite laser ranging operating at 1064 nm wavelength using superconducting nanowire single-photon detectors (SNSPDs) is successfully demonstrated. A SNSPD with an intrinsic quantum efficiency of 80% and a dark count rate of 100 cps at 1064 nm wavelength is developed and introduced to Yunnan Observatory in China. With improved closed-loop telescope systems (field of view of about 26^''), satellites including Cryosat, Ajisai, and Glonass with ranges of 1600 km, 3100 km, and 19,500 km, respectively, are experimentally ranged with mean echo rates of 1200/min, 4200/min, and 320/min, respectively. To the best of our knowledge, this is the first demonstration of laser ranging for satellites using SNSPDs at 1064 nm wavelength. Theoretical analysis of the detection efficiency and the mean echo rate for typical satellites indicate that it is possible for a SNSPD to range satellites from low Earth orbit to geostationary Earth orbit.

Structure and Electric Conduction in Pulsed Laser-Deposited ZnO Thin Films Individually Doped with N, P, or Na

NASA Astrophysics Data System (ADS)

Jiao, D. L.; Zhong, X. C.; Qiu, W. Q.; Zhang, H.; Liu, Z. W.; Zhang, G. Q.

2018-03-01

N-, P-, and Na-doped ZnO films with c-axis orientation were produced by pulsed laser deposition using N2O or O2 as the reaction gas. The effects of deposition temperature and deposition pressure on the lattice structure, morphology, and electric conduction have been investigated. High gas pressure leads to large-sized grains with large grain barriers, which cause a reduced mobility. P acts as an acceptor and the number of compensating defects in the P-doped film is reduced under high O2 pressure. Na also acts as an acceptor, and the effects of high temperature on Na-doped films are encouraging as the solubility of the dopant is high. However, high temperature may cause less incorporation of N and P in the film. In the present work, p-type conduction has not been obtained in N- and P-doped films despite a wide range of processing parameters employed. Na-doped films display an increasing trend towards p-type films at high temperatures and high O2 pressures. These results provide an insight on how these dopants behave in ZnO films and indicate that the careful selection of the deposition conditions is necessary in order to obtain p-type films by pulsed laser deposition.

Silver nanowires as infrared-active materials for surface-enhanced Raman scattering.

PubMed

Becucci, Maurizio; Bracciali, Monica; Ghini, Giacomo; Lofrumento, Cristiana; Pietraperzia, Giangaetano; Ricci, Marilena; Tognaccini, Lorenzo; Trigari, Silvana; Gellini, Cristina; Feis, Alessandro

2018-05-17

Surface-enhanced Raman scattering (SERS) is increasing in significance as a bioanalytical tool. Novel nanostructured metal substrates are required to improve performances and versatility of SERS spectroscopy. In particular, as biological tissues are relatively transparent in the infrared wavelength range, SERS-active materials suitable for infrared laser excitation are needed. Nanowires appear interesting in this respect as they show a very broad localized surface plasmon resonance band, ranging from near UV to near infrared wavelengths. The SERS activity of silver nanowires has been tested at three wavelengths and a fair enhancement at 1064 and 514 nm has been observed, whereas a very weak enhancement was present when exciting close to the nanowire extinction maximum. These experimentally measured optical properties have been contrasted with finite element method simulations. Furthermore, laser-induced optoacoustic spectroscopy measurements have shown that the extinction at 1064 nm is completely due to scattering. This result has an important implication that no heating occurs when silver nanowires are utilized as SERS-active substrates, thereby preventing possible thermal damage.

Fe2 PO5 -Encapsulated Reverse Energetic ZnO/Fe2 O3 Heterojunction Nanowire for Enhanced Photoelectrochemical Oxidation of Water.

PubMed

Qin, Dong-Dong; He, Cai-Hua; Li, Yang; Trammel, Antonio C; Gu, Jing; Chen, Jing; Yan, Yong; Shan, Duo-Liang; Wang, Qiu-Hong; Quan, Jing-Jing; Tao, Chun-Lan; Lu, Xiao-Quan

2017-07-10

Zinc oxide is regarded as a promising candidate for application in photoelectrochemical water oxidation due to its higher electron mobility. However, its instability under alkaline conditions limits its application in a practical setting. Herein, we demonstrate an easily achieved wet-chemical route to chemically stabilize ZnO nanowires (NWs) by protecting them with a thin layer Fe 2 O 3 shell. This shell, in which the thickness can be tuned by varying reaction times, forms an intact interface with ZnO NWs, thus protecting ZnO from corrosion in a basic solution. The reverse energetic heterojunction nanowires are subsequently activated by introducing an amorphous iron phosphate, which substantially suppressed surface recombination as a passivation layer and improved photoelectrochemical performance as a potential catalyst. Compared with pure ZnO NWs (0.4 mA cm -2 ), a maximal photocurrent of 1.0 mA cm -2 is achieved with ZnO/Fe 2 O 3 core-shell NWs and 2.3 mA cm -2 was achieved for the PH 3 -treated NWs at 1.23 V versus RHE. The PH 3 low-temperature treatment creates a dual function, passivation and catalyst layer (Fe 2 PO 5 ), examined by X-ray photoelectron spectroscopy, TEM, photoelectrochemical characterization, and impedance measurements. Such a nano-composition design offers great promise to improve the overall performance of the photoanode material. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

X-ray Emission Characteristics of Ultra-High Energy Density Relativistic Plasmas Created by Ultrafast Laser Irradiation of Nanowire Arrays

NASA Astrophysics Data System (ADS)

Hollinger, R. C.; Bargsten, C.; Shlyaptsev, V. N.; Pukhov, A.; Purvis, M. A.; Townsend, A.; Keiss, D.; Wang, Y.; Wang, S.; Prieto, A.; Rocca, J. J.

2014-10-01

Irradiation of ordered nanowire arrays with high contrast femtosecond laser pulses of relativistic intensity creates volumetrically heated near solid density plasmas characterized by multi-KeV temperatures and extreme degrees of ionization. The large hydrodynamic-to-radiative lifetime ratio of these plasmas results in very efficient X-ray generation. Au nanowire array plasmas irradiated at I 5×1018 Wcm-2 are measured to convert ~ 5 percent of the laser energy into h ν > 0.9 KeV X-rays, and >1 × 10-4 into h ν > 9 KeV photons, creating bright picosecond X-ray sources. The angular distribution of the higher energy photons is measured to change from isotropic into annular as the intensity increases, while softer X-ray emission (h ν >1 KeV) remains isotropic and nearly unchanged. Model simulations suggest the unexpected annular distribution of the hard X-rays might result from bremsstrahlung of fast electrons confined in a high aspect ratio near solid density plasma in which the electron-ion collision mean free-path is of the order of the plasma thickness. Work supported by the U.S Department of Energy, Fusion Energy Sciences and the Defense Threat Reduction Agency Grant HDTRA-1-10-1-0079. A.P was supported by of DFG-funded project TR18.

Enhancing absorption in coated semiconductor nanowire/nanorod core-shell arrays using active host matrices

NASA Astrophysics Data System (ADS)

Jule, Leta; Dejene, Francis; Roro, Kittessa

2016-12-01

In the present work, we investigated theoretically and experimentally the interaction of radiation field phenomena interacting with arrays of nanowire/nanorod core-shell embedded in active host matrices. The optical properties of composites are explored including the case when the absorption of propagating wave by dissipative component is completely compensated by amplification in active (lasing) medium. On the basis of more elaborated modeling approach and extended effective medium theory, the effective polarizability and the refractive index of electromagnetic mode dispersion of the core-shell nanowire arrays are derived. ZnS(shell)-coated by sulphidation process on ZnO(shell) nanorod arrays grown on (100) silicon substrate by chemical bath deposition (CBD) has been used for theoretical comparison. Compared with the bare ZnO nanorods, ZnS-coated core/shell nanorods exhibit a strongly reduced ultraviolet (UV) emission and a dramatically enhanced deep level (DL) emission. Obviously, the UV and DL emission peaks are attributed to the emissions of ZnO nanorods within ZnO/ZnS core/shell nanorods. The reduction of UV emission after ZnS coating seems to agree with the charge separation mechanism of type-II band alignment that holes transfer from the core to shell, which would quench the UV emission to a certain extent. Our theoretical calculations and numerical simulation demonstrate that the use of active host (amplifying) medium to compensate absorption at metallic inclusions. Moreover the core-shell nanorod/nanowire arrays create the opportunity for broad band absorption and light harvesting applications.

Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures

NASA Astrophysics Data System (ADS)

Mannam, Ramanjaneyulu; Kumar, E. Senthil; Priyadarshini, D. M.; Bellarmine, F.; DasGupta, Nandita; Ramachandra Rao, M. S.

2017-10-01

We report on the growth of ZnO nanostructures in different gas ambient (Ar and N2) using pulsed laser deposition technique. Despite the similar growth temperature, use of N2 ambient gas resulted in well-aligned nanorods with flat surface at the tip, whereas, nanorods grown with Ar ambient exhibited tapered tips. The Nanorods grown under N2 ambient exhibited additional Raman modes corresponding to N induced zinc interstitials. The nanorods are c-axis oriented and highly epitaxial in nature. Photoluminescence spectroscopy reveals that the UV emission can be significantly enhanced by 10 times for the nanorods grown under Ar ambient. The enhanced UV emission is attributed to the reduction in polarization electric field along the c-axis. n-ZnO nanorods/p-Si heterojunction showed rectifying I-V characteristics with a turn of voltage of 3.4 V.

Probing the photoresponse of individual Nb2O5 nanowires with global and localized laser beam irradiation.

PubMed

Tamang, Rajesh; Varghese, Binni; Mhaisalkar, Subodh G; Tok, Eng Soon; Sow, Chorng Haur

2011-03-18

Photoresponse of isolated Nb(2)O(5) nanowires (NW) padded with platinum (Pt) at both ends were studied with global irradiation by a laser beam and localized irradiation using a focused laser beam. Global laser irradiation on individual NW in ambient and vacuum conditions revealed photocurrent contributions with different time characteristics (rapid and slowly varying components) arising from defect level excitations, thermal heating effect, surface states and NW-Pt contacts. With a spot size of < 1 µm, localized irradiation highlighted the fact that the measured photocurrent in this single NW device (with and without applied bias) depended sensitively on the photoresponse at the NW-Pt contacts. At applied bias, unidirectional photocurrent was observed and higher photocurrent was achieved with localized laser irradiation at reverse-biased NW-Pt contacts. At zero bias, the opposite polarity of photocurrents was detected when the two NW-Pt contacts were subjected to focused laser beam irradiation. A reduced Schottky barrier/width resulting from an increase in charge carriers and thermoelectric effects arising from the localized thermal heating due to focused laser beam irradiation were proposed as the mechanisms dictating the photocurrent at the NW-Pt interface. Comparison of photocurrents generated upon global and localized laser irradiation showed that the main contribution to the photocurrent was largely due to the photoresponse of the NW-Pt contacts.

Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires.

PubMed

Lord, Alex M; Ramasse, Quentin M; Kepaptsoglou, Despoina M; Evans, Jonathan E; Davies, Philip R; Ward, Michael B; Wilks, Steve P

2017-02-08

Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal-nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal-support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au-nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties.

Growth and characterization of ZnO multipods on functional surfaces with different sizes and shapes of Ag particles

NASA Astrophysics Data System (ADS)

A, Kamalianfar; S, A. Halim; Mahmoud Godarz, Naseri; M, Navasery; Fasih, Ud Din; J, A. M. Zahedi; Kasra, Behzad; K, P. Lim; A Lavari, Monghadam; S, K. Chen

2013-08-01

Three-dimensional ZnO multipods are successfully synthesized on functional substrates using the vapor transport method in a quartz tube. The functional surfaces, which include two different distributions of Ag nanoparticles and a layer of commercial Ag nanowires, are coated onto silicon substrates before the growth of ZnO nanostructures. The structures and morphologies of the ZnO/Ag heterostructures are investigated using X-ray diffraction and field emission scanning electron microscopy. The sizes and shapes of the Ag particles affect the growth rates and initial nucleations of the ZnO structures, resulting in different numbers and shapes of multipods. They also influence the orientation and growth quality of the rods. The optical properties are studied by photoluminescence, UV-vis, and Raman spectroscopy. The results indicate that the surface plasmon resonance strongly depends on the sizes and shapes of the Ag particles.

Nanostructured ZnO films for potential use in LPG gas sensors

NASA Astrophysics Data System (ADS)

Latyshev, V. M.; Berestok, T. O.; Opanasyuk, A. S.; Kornyushchenko, A. S.; Perekrestov, V. I.

2017-05-01

The aim of the work was to obtain ZnO nanostructures with heightened surface area and to study relationship between formation method and gas sensor properties towards propane-butane mixture (LPG). In order to synthesize ZnO nanostructures chemical and physical formation methods have been utilized. The first one was chemical bath deposition technology and the second one magnetron sputtering of Zn followed by oxidation. Optimal method and technological parameters corresponding to formation of material with the highest sensor response have been determined experimentally. Dynamical gas sensor response at different temperature values and dependencies of the sensor sensitivity on the temperature at different LPG concentrations in air have been investigated. It has been found, that sensor response depends on the sample morphology and has the highest value for the structure consisting of thin nanowires. The factors that lead to the decrease in the gas sensor operating temperature have been determined.

Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

DOE PAGES

Liu, Sheng; Li, Changyi; Figiel, Jeffrey J.; ...

2015-04-27

In this paper, we report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ~7 GPa. The GaN NW lasers, with heights of 4–5 μm and diameters ~140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ~40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values,more » revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. Finally, this approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.« less

Performance of ZnO based piezo-generators under controlled compression

NASA Astrophysics Data System (ADS)

Tao, Ran; Parmar, Mitesh; Ardila, Gustavo; Oliveira, Paulo; Marques, Daniel; Montès, Laurent; Mouis, Mireille

2017-06-01

This paper reports on the fabrication and characterization of ZnO based vertically integrated nanogenerator (VING) devices under controlled compression. The basic NG structure is a composite material integrating hydrothermally grown vertical piezoelectric zinc oxide (ZnO) nanowires (NWs) into a dielectric matrix (PMMA). A specific characterization set-up has been developed to control the applied compression and the perpendicularity of the applied force on the devices. The role of different fabrication parameters has been evaluated experimentally and compared with previously reported theoretical models, including the thickness of the top PMMA layer and the density of the NWs array in the matrix. Finally, the performance of the VING structure has been evaluated experimentally for different resistive loads obtaining a power density of 85 μW cm-3 considering only the active layer of the device. This has been compared to the performance of a commercial bulk layer of PZT (25 μW cm-3) under the same applied force of 5 N.

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

NASA Astrophysics Data System (ADS)

Tsakonas, C.; Kuznetsov, V. L.; Cranton, W. M.; Kalfagiannis, N.; Abusabee, K. M.; Koutsogeorgis, D. C.; Abeywickrama, N.; Edwards, P. P.

2017-12-01