Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

2017-10-01

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

NASA Astrophysics Data System (ADS)

Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

2017-05-01

In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Chien, Nguyen Viet; Van Duy, Nguyen; Vuong, Dang Duc; Lam, Nguyen Huu; Hoa, Nguyen Duc; Van Hieu, Nguyen; Chien, Nguyen Duc

2015-01-01

The detection of H2S, an important gaseous molecule that has been recently marked as a highly toxic environmental pollutant, has attracted increasing attention. We fabricate a wafer-scale SnO2 thin film sensitized with CuO islands using microelectronic technology for the improved detection of the highly toxic H2S gas. The SnO2-CuO island sensor exhibits significantly enhanced H2S gas response and reduced operating temperature. The thickness of CuO islands strongly influences H2S sensing characteristics, and the highest H2S gas response is observed with 20 nm-thick CuO islands. The response value (Ra/Rg) of the SnO2-CuO island sensor to 5 ppm H2S is as high as 128 at 200 °C and increases nearly 55-fold compared with that of the bare SnO2 thin film sensor. Meanwhile, the response of the SnO2-CuO island sensor to H2 (250 ppm), NH3 (250 ppm), CO (250 ppm), and LPG (1000 ppm) are low (1.3-2.5). The enhanced gas response and selectivity of the SnO2-CuO island sensor to H2S gas is explained by the sensitizing effect of CuO islands and the extension of electron depletion regions because of the formation of p-n junctions.

Electronic structure and magnetic properties of Ni-doped SnO2 thin films

NASA Astrophysics Data System (ADS)

Sharma, Mayuri; Kumar, Shalendra; Alvi, P. A.

2018-05-01

This paper reports the electronic structure and magnetic properties of Ni-doped SnO2 thin film which were grown on Si (100) substrate by PLD (pulse laser deposition) technique under oxygen partial pressure (PO2). For getting electronic structure and magnetic behavior, the films were characterized using near edge X-ray absorption fine structure spectroscopy (NEXAFS) and DC magnetization measurements. The NEXAFS study at Ni L3,2 edge has been done to understand the local environment of Ni and Sn ions within SnO2 lattice. DC magnetization measurement shows that the saturation magnetization increases with the increase in substitution of Ni2+ ions in the system.

Combinatorial study of zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

2008-01-01

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

NASA Astrophysics Data System (ADS)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Smart chemical sensors using ZnO semiconducting thin films for freshness detection of foods and beverages

NASA Astrophysics Data System (ADS)

Nanto, Hidehito; Kobayashi, Toshiki; Dougami, Naganori; Habara, Masaaki; Yamamoto, Hajime; Kusano, Eiji; Kinbara, Akira; Douguchi, Yoshiteru

1998-07-01

The sensitivity of the chemical sensor, based on the resistance change of Al2O3-doped and SnO2-doped ZnO (ZnO:Al and ZnO:SnO2) thin film, is studied for exposure to various gases. It is found that the ZnO:Al and ZnO:Sn thin film chemical sensor has a high sensitivity and excellent selectivity for amine (TMA and DMA) gas and ethanol gas, respectively. The ZnO:Al (5.0 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to odors from rotten sea foods, such as salmon, sea bream, oyster, squid and sardine, responds to the freshness change of these sea foods. The ZnO:SnO2 (78 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to aroma from alcohols, such as wine, Japanese sake, and whisky, responds to the freshness change of these alcohols.

Structural and optical characterization of p-type highly Fe-doped SnO2 thin films and tunneling transport on SnO2:Fe/p-Si heterojunction

NASA Astrophysics Data System (ADS)

Ben Haj Othmen, Walid; Ben Hamed, Zied; Sieber, Brigitte; Addad, Ahmed; Elhouichet, Habib; Boukherroub, Rabah

2018-03-01

Nanocrystalline highly Fe-doped SnO2 thin films were prepared using a new simple sol-gel method with iron amounts of 5, 10, 15 and 20%. The obtained gel offers a long durability and high quality allowing to reach a sub-5 nm nanocrystalline size with a good crystallinity. The films were structurally characterized through X-ray diffraction (XRD) that confirms the formation of rutile SnO2. High Resolution Transmission Electron Microscopy (HRTEM) images reveals the good crystallinity of the nanoparticles. Raman spectroscopy shows that the SnO2 rutile structure is maintained even for high iron concentration. The variation of the PL intensity with Fe concentration reveals that iron influences the distribution of oxygen vacancies in tin oxide. The optical transmittance results indicate a redshift of the SnO2 band gap when iron concentration increases. The above optical results lead us to assume the presence of a compensation phenomenon between oxygen vacancies and introduced holes following Fe doping. From current-voltage measurements, an inversion of the conduction type from n to p is strongly predicted to follow the iron addition. Electrical characterizations of SnO2:Fe/p-Si and SnO2:Fe/n-Si heterojunctions seem to be in accordance with this deduction. The quantum tunneling mechanism is expected to be important at high Fe doping level, which was confirmed by current-voltage measurements at different temperatures. Both optical and electrical properties of the elaborated films present a particularity for the same iron concentration and adopt similar tendencies with Fe amount, which strongly correlate the experimental observations. In order to evaluate the applicability of the elaborated films, we proceed to the fabrication of the SnO2:Fe/SnO2 homojunction for which we note a good rectifying behavior.

Enhanced Ethanol Gas Sensing Properties of SnO2-Core/ZnO-Shell Nanostructures

PubMed Central

Tharsika, T.; Haseeb, A. S. M. A.; Akbar, Sheikh A.; Sabri, Mohd Faizul Mohd; Hoong, Wong Yew

2014-01-01

An inexpensive single-step carbon-assisted thermal evaporation method for the growth of SnO2-core/ZnO-shell nanostructures is described, and the ethanol sensing properties are presented. The structure and phases of the grown nanostructures are investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. XRD analysis indicates that the core-shell nanostructures have good crystallinity. At a lower growth duration of 15 min, only SnO2 nanowires with a rectangular cross-section are observed, while the ZnO shell is observed when the growth time is increased to 30 min. Core-shell hierarchical nanostructures are present for a growth time exceeding 60 min. The growth mechanism for SnO2-core/ZnO-shell nanowires and hierarchical nanostructures are also discussed. The sensitivity of the synthesized SnO2-core/ZnO-shell nanostructures towards ethanol sensing is investigated. Results show that the SnO2-core/ZnO-shell nanostructures deposited at 90 min exhibit enhanced sensitivity to ethanol. The sensitivity of SnO2-core/ZnO-shell nanostructures towards 20 ppm ethanol gas at 400 °C is about ∼5-times that of SnO2 nanowires. This improvement in ethanol gas response is attributed to high active sensing sites and the synergistic effect of the encapsulation of SnO2 by ZnO nanostructures. PMID:25116903

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules.

PubMed

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-08

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (R air/R gas = 12.8) compared to that (R air/R gas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

PubMed Central

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors. PMID:26743814

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

NASA Astrophysics Data System (ADS)

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Facile fabrication of a well-ordered porous Cu-doped SnO2 thin film for H2S sensing.

PubMed

Zhang, Shumin; Zhang, Pingping; Wang, Yun; Ma, Yanyun; Zhong, Jun; Sun, Xuhui

2014-09-10

Well-ordered Cu-doped and undoped SnO2 porous thin films with large specific surface areas have been fabricated on a desired substrate using a self-assembled soft template combined with simple physical cosputtering deposition. The Cu-doped SnO2 porous film gas sensor shows a significant enhancement in its sensing performance, including a high sensitivity, selectivity, and a fast response and recovery time. The sensitivity of the Cu-doped SnO2 porous sensor is 1 order of magnitude higher than that of the undoped SnO2 sensor, with average response and recovery times to 100 ppm of H2S of ∼ 10.1 and ∼ 42.4 s, respectively, at the optimal operating temperature of 180 °C. The well-defined porous sensors fabricated by the method also exhibit high reproducibility because of the accurately controlled fabrication process. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors with easy doping and multilayer porous nanostructure for practical sensing applications.

LiCoO2 and SnO2 Thin Film Electrodes for Lithium-Ion Battery Applications

NASA Technical Reports Server (NTRS)

Maranchi, Jeffrey P.; Hepp, Aloysius F.; Kumta, Prashant N.

2004-01-01

There is an increasing need for small dimension, ultra-lightweight, portable power supplies due to the miniaturization of consumer electronic devices. Rechargeable thin film lithium-ion batteries have the potential to fulfill the growing demands for micro-energy storage devices. However, rechargeable battery technology and fabrication processes have not kept paced with the advances made in device technology. Economical fabrication methods lending excellent microstructural and compositional control in the thin film battery electrodes have yet to be fully developed. In this study, spin coating has been used to demonstrate the flexibility of the approach to produce both anode (SnO2) and cathode (LiCoO2) thin films. Results on the microstructure crystal structure and electrochemical properties of the thin film electrodes are described and discussed.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

NASA Astrophysics Data System (ADS)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

Nanoporous structures on ZnO thin films

NASA Astrophysics Data System (ADS)

Gür, Emre; Kılıç, Bayram; Coşkun, C.; Tüzemen, S.; Bayrakçeken, Fatma

2010-01-01

Porous structures were formed on ZnO thin films which were grown by an electrochemical deposition (ECD) method. The growth processes were carried out in a solution of dimethylsulfoxide (DMSO) zinc perchlorate, Zn(ClO 4) 2, at 120 ∘C on indium tin oxide (ITO) substrates. Optical and structural characterizations of electrochemically grown ZnO thin films have shown that the films possess high (0002) c-axis orientation, high nucleation, high intensity and low FWHM of UV emission at the band edge region and a sharp UV absorption edge. Nanoporous structures were formed via self-assembled monolayers (SAMs) of hexanethiol (C 6SH) and dodecanethiol (C 12SH). Scanning electron microscope (SEM) measurements showed that while a nanoporous structure (pore radius 20 nm) is formed on the ZnO thin films by hexanathiol solution, a macroporous structure (pore radius 360 nm) is formed by dodecanethiol solution. No significant variation is observed in X-ray diffraction (XRD) measurements on the ZnO thin films after pore formation. However, photoluminescence (PL) measurements showed that green emission is observed as the dominant emission for the macroporous structures, while no variation is observed for the thin film nanoporous ZnO sample.

Effect of annealing temperature on optical and electrical properties of ZrO2-SnO2 based nanocomposite thin films

NASA Astrophysics Data System (ADS)

Anitha, V. S.; Lekshmy, S. Sujatha; Berlin, I. John; Joy, K.

2014-01-01

Transparent nanocomposite ZrO2-SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2-SnO2 films can be used in many applications and in optoelectronic devices.

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

NASA Astrophysics Data System (ADS)

Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

2018-04-01

The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

The role of Tin Oxide Concentration on The X-ray Diffraction, Morphology and Optical Properties of In2O3:SnO2 Thin Films

NASA Astrophysics Data System (ADS)

Hasan, Bushra A.; Abdallah, Rusul M.

2018-05-01

Alloys were performed from In2O3 doped SnO2 with different doping ratio by quenching from the melt technique. Pulsed Laser Deposition PLD was used to deposit thin films of different doping ratio In2O3 : SnO2 (0, 1, 3, 5, 7 and 9 % wt.) on glass substrate at ambient temperature under vacuum of 10-3 bar thickness of ∼100nm. The structural type,grain size and morphology of the prepared alloys compounds and thin films were examined using X-ray diffraction and atomic force microscopy. The results showed that all alloys have polycrystalline structures and the peaks belonged to the preferred plane for crystal growth were identical with the ITO (Indium – Tin –Oxide) standard cards also another peaks were observed belonged to SnO2 phase. The structures of thin films was also polycrystalline, and the predominate peaks are identical with standard cards ITO. On the other side the prepared thin films declared decrease a reduction of degree of crystallinity with the increase of doping ratio. Atomic Force Microscopy AFM measurements showed the average grain size and average surface roughness exhibit to change in systematic manner with the increase of doping ratio with tin oxide. The optical measurements show that the In2O3:SnO2 thin films have a direct energy gap Eg opt in the first stage decreases with the increase of doping ratio and then get to increase with further increase of doping ration, whereas reverse to that the optical constants such as refractive index (n), extinction coefficient (k) and dielectric constant (εr, εi) have a regular increase with the doping ratio by tin oxide and then decreases.

Enhanced antibacterial performance of hybrid semiconductor nanomaterials: ZnO/SnO 2 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Talebian, Nasrin; Nilforoushan, Mohammad Reza; Zargar, Elahe Badri

2011-10-01

The nano-sized coupled oxides ZnO/SnO 2 thin films in a molar ratio of 2:1 (Z2S), 1:1 (ZS) and 1:2 (ZS2) were prepared using sol-gel dip coating method and characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. Escherichia coli ( E. coli, ATCC 25922) was selected as a model for the Gram-negative bacteria to evaluate antibacterial property of composite samples compared with single ZnO (Z) and single SnO 2 (S) films. The antibacterial activity has been studied applying the so-called antibacterial drop test under UV illumination. The bactericidal activity was estimated by relative number of bacteria survived calculated from the number of viable cells which form colonies on the nutrient agar plates. The influence of the SnO 2-ZnO nanocomposite composition on the structural features and on the antibacterial properties of the thin films are reported and discussed. It is found that all coatings exhibited a high antibacterial activity. The coupled oxide photocatalyst Z2S has better photocatalytic activity to bacteria inactivation than ZS, ZS2, Z and S films. Furthermore, nanostructured films were active even in the absence of irradiation.

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2.

PubMed

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-06-08

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

NASA Astrophysics Data System (ADS)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-06-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

Annealing effect on the structural, morphological and electrical properties of TiO2/ZnO bilayer thin films

NASA Astrophysics Data System (ADS)

Khan, M. I.; Imran, S.; Shahnawaz; Saleem, Muhammad; Ur Rehman, Saif

2018-03-01

The effect of annealing temperature on the structural, morphological and electrical properties of TiO2/ZnO (TZ) thin films has been observed. Bilayer thin films of TiO2/ZnO are deposited on FTO glass substrate by spray pyrolysis method. After deposition, these films are annealed at 573 K, 723 K and 873 K. XRD shows that TiO2 is present in anatase phase only and ZnO is present in hexagonal phase. No other phases of TiO2 and ZnO are present. Also, there is no evidence of other compounds like Zn-Ti etc. It also shows that the average grain size of TiO2/ZnO films is increased by increasing annealing temperature. AFM (Atomic force microscope) showed that the average roughness of TiO2/ZnO films is decreased at temperature 573-723 K and then increased at 873 K. The calculated average sheet resistivity of thin films annealed at 573 K, 723 K and 873 K is 152.28 × 102, 75.29 × 102 and 63.34 × 102 ohm-m respectively. This decrease in sheet resistivity might be due to the increment of electron concentration with increasing thickness and the temperature of thin films.

Electrical properties of thin film transistors with zinc tin oxide channel layer

NASA Astrophysics Data System (ADS)

Hong, Seunghwan; Oh, Gyujin; Kim, Eun Kyu

2017-10-01

We have investigated thin film transistors (TFTs) with zinc tin oxide (ZTO) channel layer fabricated by using an ultra-high vacuum radio frequency sputter. ZTO thin films were grown at room temperature by co-sputtering of ZnO and SnO2, which applied power for SnO2 target was varied from 15 W to 90 W under a fixed sputtering power of 70 W for ZnO target. A post-annealing treatment to improve the film quality was done at temperature ranges from 300 to 600 °C by using the electrical furnace. The ZTO thin films showed good electrical and optical properties such as Hall mobility of more than 9 cm2/V·s, specific resistivity of about 2 × 102 Ω·cm, and optical transmittance of 85% in visible light region by optical bandgap of 3.3 eV. The ZTO-TFT with an excellent performance of channel mobility of 19.1 cm2/V·s and on-off ratio ( I on / I off ) of 104 was obtained from the films grown with SnO2 target power of 25 W and post-annealed at 450 °C. This result showed that ZTO film is promising on application to a high performance transparent TFTs.

Soft exfoliation of 2D SnO with size-dependent optical properties

NASA Astrophysics Data System (ADS)

Singh, Mandeep; Della Gaspera, Enrico; Ahmed, Taimur; Walia, Sumeet; Ramanathan, Rajesh; van Embden, Joel; Mayes, Edwin; Bansal, Vipul

2017-06-01

Two-dimensional (2D) materials have recently gained unprecedented attention as potential candidates for next-generation (opto)electronic devices due to their fascinating optical and electrical properties. Tin monoxide, SnO, is an important p-type semiconductor with applications across photocatalysis (water splitting) and electronics (transistors). However, despite its potential in several important technological applications, SnO remains underexplored in its 2D form. Here we present a soft exfoliation strategy to produce 2D SnO nanosheets with tunable optical and electrical properties. Our approach involves the initial synthesis of layered SnO microspheres, which are readily exfoliated through a low-power sonication step to form high quality SnO nanosheets. We demonstrate that the properties of 2D SnO are strongly dependent on its dimensions. As verified through optical absorption and photoluminescence studies, a strong size-dependent quantum confinement effect in 2D SnO leads to substantial variation in its optical and electrical properties. This results in a remarkable (>1 eV) band gap widening in atomically thin SnO. Through photoconductivity measurements, we further validate a strong correlation between the quantum-confined properties of 2D SnO and the selective photoresponse of atomically thin sheets in the high energy UV light. Such tunable semiconducting properties of 2D SnO could be exploited for a variety of applications including photocatalysis, photovoltaics and optoelectronics in general.

Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

NASA Astrophysics Data System (ADS)

Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

2018-04-01

Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

Surfactant modified SnO2 nanostructured thin film for improved sensing performance of LPG and ammonia

NASA Astrophysics Data System (ADS)

Kumari, K. Prasanna; Thomas, Boben

2017-05-01

SnO2 nanostructured thin films have been successfully synthesized by way of spray pyrolysis from surfactant added solution. The X-ray diffraction pattern discloses the tetragonal rutile phase of the deposited SnO2 films, which experience a grain size reduction from 35 nm to 19 nm, on the addition of PVP surfactant in precursor. Gas sensing investigations on the surfactant modified film show considerable LPG and NH3 response at a lower operating temperature of 150°C. Quick response (˜20s) and fast recovery (˜30s) are the main features of these sensors. The measurement of AC conductivity of the sample allows understanding the conduction mechanism and sensing action for to enhance the detection sensitivity greatly.

Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

PubMed

Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

2016-12-21

To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu 2 ZnSnS 4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g -1 even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm 2 utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO 2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells

NASA Astrophysics Data System (ADS)

Reddy, N. Nanda Kumar; Akkera, Harish Sharma; Sekhar, M. Chandra; Park, Si-Hyun

2017-12-01

In the present work, we investigated the effect of Zr doping (0-6 at%) on the structural, electrical, and optical properties of tin oxide (SnO2) thin films deposited onto glass substrates using a spray pyrolysis technique. The room-temperature X-ray diffraction pattern shows that all deposited films exhibit polycrystalline tetragonal structure. The pure SnO2 film is grown along a preferred (200) direction, whereas Zr-doped SnO2 (Zr:SnO2) films started growing along the (220) orientation along with a high intensity peak of (200). Scanning electron microscope (SEM) and atomic force microscope (AFM) images showed that the grains of the films are spherical in structure, and the grain size decreased with increasing of Zr concentration. The optical transmission spectra of deposited films as a function of wavelength confirm that the average optical transmittance is > 85% for Zr:SnO2 films. The value of the optical bandgap is significantly decreased from 3.94 to 3.68 eV with increasing Zr concentration. Furthermore, the electrical measurements found that the sheet resistance ( R sh) and resistivity ( ρ) values are decreased with increasing of Zr doping. The lowest values of R sh = 6.82 Ω and ρ = 0.4 × 10- 3 Ω cm are found in 6-at% Zr-doped SnO2 film. In addition, a good efficiency value of the figure of merit ( ɸ = 3.35 × 10- 3 Ω-1) is observed in 6-at% Zr-doped SnO2 film. These outstanding properties of Zr-doped SnO2 films make them useful for several optoelectronic device applications.

ZnO Thin Film Electronics for More than Displays

NASA Astrophysics Data System (ADS)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

ZrO{sub 2}-ZnO composite thin films for humidity sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velumani, M., E-mail: velumanimohan@gmail.com; Sivacoumar, R.; Alex, Z. C.

2016-05-23

ZrO{sub 2}-ZnO composite thin films were grown by reactive DC magnetron sputtering. X-ray diffraction studies reveal the composite nature of the films with separate ZnO and ZrO{sub 2} phase. Scanning electron microscopy studies confirm the nanocrystalline structure of the films. The films were studied for their impedometric relative humidity (RH) sensing characteristics. The complex impedance plot was fitted with a standard equivalent circuit consisting of an inter-granular resistance and a capacitance in parallel. The DC resistance was found to be decreasing with increase in RH.

Properties of SnO2 thin films deposited by chemical spray pyrolysis using different precursor solutions

NASA Astrophysics Data System (ADS)

Abdul-Hamead, Alaa A.

2018-05-01

In this article single and double nozzle (SN, DN) chemical spray pyrolysis techniques(CSP) proved that tin dioxide SnO2 thin film can be fabricated with different structures. SnO2 prepared from three different salts of tin with a concentration of 0.05 M, with thicknesses were about 0.2 ±0.02 µm. Microstructures inspections were achieved on films, beside optical transparency addition to the contact angle CA. The results show that films have tetragonal crystalline with different micro-structures, from sheet to rod and flower-like aggregates, by the variation of the used salts by DN more than SN, also the value of the CA of the prepared films varies with different structures, reaching its highest value for flower-like aggregates of about 130°. Finally, the optical transparency was different corresponding to the disparity in surfaces roughness and topography.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Doping induced c-axis oriented growth of transparent ZnO thin film

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Joshi, U. S.

2018-04-01

c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

NASA Astrophysics Data System (ADS)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Seedless-grown of ZnO thin films for photoelectrochemical water splitting application

NASA Astrophysics Data System (ADS)

Abdullah, Aidahani; Hamid, Muhammad Azmi Abdul; Chiu, W. S.

2018-04-01

We developed a seedless hydrothermal method to grow a flower like ZnO nanorods. Prior to the growth, a layer of Au thin film is sputtered onto the surface of indium tin oxide (ITO) coated glass substrate. The morphological, structural and optical properties of the ZnO nanostructures were characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), and diffuse reflection measurement to understand the growth process of the working thin film. The photoelectrochemical (PEC) results suggest that the deposition of ZnO nanorods on Au nanoparticles plays an important role in enhancing the photoelectrode activity. H2 evolution from photo-splitting of water over Au-incorporated ZnO in the 0.1M NaOH liquid system was enhanced, compared to that over bare ZnO; particularly, the production of 15.5 µL of H2 gas after twenty five minutes exposure of ZnO grown on Au-coated thin film.

Manipulation of ZnO composition affecting electrical properties of MEH-PPV: ZnO nanocomposite thin film via spin coating for OLEDs application

NASA Astrophysics Data System (ADS)

Azhar, N. E. A.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

Recent investigations of the promising materials for optoelectronic have been demonstrated by introducing n-type inorganic material into conjugated polymer. Morphology, optical and electrical of nanocomposites thin films based on poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and zinc oxide (ZnO) nanotetrapods with various ZnO composition (0 wt% to 0.4 wt%) have been investigated. The MEH-PPV: ZnO nanocomposite thin film was deposited using spin-coating method. Surface morphology was characterized using field emission scanning electron microscopy and shows the uniform dispersion of MEH-PPV and ZnO phases for sample deposited at 0.2 wt%. The photoluminescence (PL) spectra shows the visible emission intensities increased when the ZnO composition increased. The current-voltage (I-V) measurement shows the highest conductivity of nanocomposite thin film deposited at 0.2 wt% of ZnO is 7.40 × 10-1 S. cm-1. This study will provide better performance and suitable for optoelectronic device especially OLEDs application.

Resonant photoemission spectroscopic studies of SnO2 thin films

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Chauhan, R. S.; Panchal, Gyanendra; Singh, C. P.; Dar, Tanveer A.; Phase, D. M.; Choudhary, R. J.

2017-09-01

We report the structural and electronic properties of single phase, polycrystalline rutile tetragonal SnO2 thin film grown on Si (100) substrate by pulsed laser deposition technique. X-ray photoelectron and resonant photoemission spectroscopic (RPES) studies divulge that Sn is present in 4+ (˜91%) valence state with a very small involvement of 2+ (˜9%) valence state at the surface. Valence band spectrum of the film shows prominent contribution due to the Sn4+ valence state. RPES measurements were performed in the Sn 4d→5p photo absorption region. This study shows that O-2p, Sn-5s, and Sn-5p partial density of states are the main contributions to the valence band of this material. The resonance behavior of these three contributions has been analyzed. Constant initial state versus photon energy plots suggest that the low binding energy feature at ˜2.8 eV results from the hybridization of the O-2p and mixed valence states of Sn, while remaining features at higher binding energies are due to the hybridization between O-2p (bonding) orbitals and Sn4+ valence state.

Synthesis of ZnO thin film by sol-gel spin coating technique for H2S gas sensing application

NASA Astrophysics Data System (ADS)

Nimbalkar, Amol R.; Patil, Maruti G.

2017-12-01

In this present work, zinc oxide (ZnO) thin film synthesized by a simple sol-gel spin coating technique. The structural, morphology, compositional, microstructural, optical, electrical and gas sensing properties of the film were studied by using XRD, FESEM, EDS, XPS, HRTEM, Raman, FTIR and UV-vis techniques. The ZnO thin film shows hexagonal wurtzite structure with a porous structured morphology. Gas sensing performance of synthesized ZnO thin film was tested initially for H2S gas at different operating temperatures as well as concentrations. The maximum gas response is achieved towards H2S gas at 300 °C operating temperature, at 100 ppm gas concentration as compared to other gases like CH3OH, Cl2, NH3, LPG, CH3COCH3, and C2H5OH with a good stability.

Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors.

PubMed

Huang, Heh-Chang; Hsieh, Tsung-Eong

2010-07-23

ZnO particles with an average size of about 5 nm were prepared via a sol-gel chemical route and the silane coupling agent, (3-glycidyloxypropyl)-trimethoxysilane (GPTS), was adopted to enhance the dispersion of the ZnO nanoparticles in ethyl glycol (EG) solution. A ZnO surface potential as high as 66 mV was observed and a sedimentation test showed that the ZnO precursor solution remains transparent for six months of storage, elucidating the success of surface modification on ZnO nanoparticles. The ZnO thin films were then prepared by spin coating the precursor solution on a Si wafer and annealing treatments at temperatures up to 500 degrees C were performed for subsequent preparation of ZnO thin film transistors (TFTs). Microstructure characterization revealed that the coalescence of ZnO nanoparticles occurs at temperatures as low as 200 degrees C to result in a highly uniform, nearly pore-free layer. However, annealing at higher temperatures was required to remove organic residues in the ZnO layer for satisfactory device performance. The 500 degrees C-annealed ZnO TFT sample exhibited the best electrical properties with on/off ratio = 10(5), threshold voltage = 17.1 V and mobility (micro) = 0.104 cm(2) V(-1) s(-1).

Synthesis and characterization of ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anilkumar, T. S., E-mail: anil24march@gmail.com; Girija, M. L., E-mail: girija.ml.grt1@gmail.com; Venkatesh, J., E-mail: phph9502@yahoo.com

2016-05-06

Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivitymore » of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.« less

XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO2 thin films to produce a new hybrid material coating

NASA Astrophysics Data System (ADS)

Drevet, R.; Dragoé, D.; Barthés-Labrousse, M. G.; Chaussé, A.; Andrieux, M.

2016-10-01

This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

Impact of nanostructured thin ZnO film in ultraviolet protection.

PubMed

Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

2017-01-01

Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

Third generation biosensing matrix based on Fe-implanted ZnO thin film

NASA Astrophysics Data System (ADS)

Saha, Shibu; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

2010-09-01

Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 μA mM-1 cm-2 and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

SHI irradiation effect on pure and Mn doped ZnO thin films

NASA Astrophysics Data System (ADS)

Khawal, H. A.; Raskar, N. D.; Dole, B. N.

2017-05-01

Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

Sb:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

2018-04-01

Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

A novel snowflake-like SnO2 hierarchical architecture with superior gas sensing properties

NASA Astrophysics Data System (ADS)

Li, Yanqiong

2018-02-01

Snowflake-like SnO2 hierarchical architecture has been synthesized via a facile hydrothermal method and followed by calcination. The SnO2 hierarchical structures are assembled with thin nanoflakes blocks, which look like snowflake shape. A possible mechanism for the formation of the SnO2 hierarchical structures is speculated. Moreover, gas sensing tests show that the sensor based on snowflake-like SnO2 architectures exhibited excellent gas sensing properties. The enhancement may be attributed to its unique structures, in which the porous feature on the snowflake surface could further increase the active surface area of the materials and provide facile pathways for the target gas.

Impact of nanostructured thin ZnO film in ultraviolet protection

PubMed Central

Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

2017-01-01

Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field. PMID:28096668

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Development of nanostructured ZnO thin film via electrohydrodynamic atomization technique and its photoconductivity characteristics.

PubMed

Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun

2014-08-01

This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.

Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

NASA Astrophysics Data System (ADS)

Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

2013-03-01

In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

Bio-green synthesis of Fe doped SnO2 nanoparticle thin film

NASA Astrophysics Data System (ADS)

Gattu, Ketan P.; Ghule, Kalyani; Huse, Nanasaheb P.; Dive, Avinash S.; Bagul, Sagar B.; Digraskar, Renuka V.; Sharma, Ramphal; Ghule, Anil V.

2017-05-01

Herein Fe doped SnO2 nanoparticles have been synthesized using simple, cost effective and ecofriendly biosynthesis method, in which remnant water (ideally kitchen waste) collected from soaked Bengal gram beans (Cicer arietinum L.) was used. This extract consists of different bio-molecules which acted as complexing as well as capping agents for synthesis of Fe-doped SnO2 nanoparticles. The X-ray powder diffraction (XRD) and Field-emission scanning electron microscopy (FE-SEM) revealed uniform size distribution with the average size of 6 nm and confirmed the formation of rutile structure with space group (P42/mnm) and nanocrystalline nature of the products with spherical morphology. Further, the gas sensing properties of the materials have been studied in comparison with other gases. The reported gas sensing results are promising, which suggest that the Fe-dopant is a promising noble metal additives to fabricate low cost SnO2 based sensor.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Synthesis of nanocrystalline ZnO thin films by electron beam evaporation

NASA Astrophysics Data System (ADS)

Kondkar, V.; Rukade, D.; Bhattacharyya, V.

2018-05-01

Nanocrystalline ZnO thin films have potential for applications in variety of optoelectronic devices. In the present study, nanocrystalline thin films of ZnO are grown on fused silica substrate using electron beam (e-beam) evaporation technique. Phase identification is carried out using Glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy. Ultraviolet-Visible (UV-Vis) spectroscopic analysis is carried out to calculate energy band gap of the ZnO film. Surface morphology of the film is investigated using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). Highly quality nanocrystalline thin films of hexagonal wurtzite ZnO are synthesized using e-beam evaporation technique.

Spray-coated single walled carbon nanotubes as source and drain electrodes in SnO thin-film transistors

NASA Astrophysics Data System (ADS)

Ryu, Jae Hyeon; Baek, Geun-Woo; Kim, Seung Yeob; Kwon, Hyuck-In; Jin, Sung Hun

2018-07-01

In this letter, spray-coated single walled carbon nanotubes (SWNTs) as one of alternative electrodes in SnO thin-film transistors are demonstrated for emerging electronic applications. Herein, the device architecture of SnO TFTs with a polymer etch stop layer (SU-8) enables the selective etching of SWNTs in a desired region without the detrimental effects of SnO channel layers. Moreover, SnO TFTs with SWNT electrodes as substitutes successfully demonstrate decent width normalized electrical contact properties (∼1.49 kΩ cm), field effect mobility (∼0.69 cm2 V‑1 s‑1), sub-threshold slope (∼0.4 V dec‑1), and current on–off ratio (I on/I off ∼ 3.5 × 103). Systematic temperature dependency measurements elucidate that SnO channel transports with an activation energy within several tens of meV, together with decent contact resistance as compared to that of conventional Ni electrodes.

Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film

NASA Astrophysics Data System (ADS)

Yamauchi, Hiroshi; Iizuka, Masaaki; Kudo, Kazuhiro

2007-04-01

Organic light-emitting diodes (OLEDs) combined with thin film transistor (TFT) are well suitable elements for low-cost, large-area active matrix displays. On the other hand, zinc oxide (ZnO) is a transparent material and its electrical conductivity is controlled from conductive to insulating by growth conditions. The drain current of ZnO FET is 180 μA. The OLED uses ZnO thin film (Al-doped) for the electron injection layer and is controlled by radio frequency (rf) and direct current (dc) sputtering conditions, such as Al concentration and gas pressure. Al concentration in the ZnO film and deposition rate have strong effects on electron injection. Furthermore, the OLED driven by ZnO FET shows a luminance of 13 cd/m2, a luminance efficiency of 0.7 cd/A, and an on-off ratio of 650.

Highly Sensitive H2S Sensor Based on the Metal-Catalyzed SnO2 Nanocolumns Fabricated by Glancing Angle Deposition

PubMed Central

Yoo, Kwang Soo; Han, Soo Deok; Moon, Hi Gyu; Yoon, Seok-Jin; Kang, Chong-Yun

2015-01-01

As highly sensitive H2S gas sensors, Au- and Ag-catalyzed SnO2 thin films with morphology-controlled nanostructures were fabricated by using e-beam evaporation in combination with the glancing angle deposition (GAD) technique. After annealing at 500 °C for 40 h, the sensors showed a polycrystalline phase with a porous, tilted columnar nanostructure. The gas sensitivities (S = Rgas/Rair) of Au and Ag-catalyzed SnO2 sensors fabricated by the GAD process were 0.009 and 0.015, respectively, under 5 ppm H2S at 300 °C, and the 90% response time was approximately 5 s. These sensors showed excellent sensitivities compared with the SnO2 thin film sensors that were deposited normally (glancing angle = 0°, S = 0.48). PMID:26134105

Structural and Optoelectronic Properties of SnO2 Thin Films Doped by Group-Ia Elements

NASA Astrophysics Data System (ADS)

Benhebal, Hadj; Benrabah, Bedhiaf; Ammari, Aek; Madoune, Yacine; Lambert, Stéphanie D.

This paper presents the results of an experimental work devoted to the synthesis and the characterization of tin dioxide (SnO2) thin layers doped with group-IA elements (Li, Na and K). The materials were synthesized by the sol-gel method and deposited by dip-coating, using tin (II) chloride dihydrate as a source of tin and absolute ethyl alcohol as solvent. Thin films prepared were characterized by several techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared spectroscopy (IR), visible and ultraviolet spectroscopy and complex impedance method. The results obtained show that the materials kept their tetragonal rutile structure with preferred orientation of (101), whereas doping leads to a reduction of their energy band gap. The complex impedance analysis suggests that the different processes occurring at the electrode interface are modeled by an electrical circuit not affected by the doping.

Highly Sensitive Nanostructured SnO2 Thin Films For Hydrogen Sensing

NASA Astrophysics Data System (ADS)

Patil, L. A.; Shinde, M. D.; Bari, A. R.; Deo, V. V.

2010-10-01

Nanostructured SnO2 thin films were prepared by ultrasonic spray pyrolysis technique. Aqueous solution (0.05 M) of SnCl4ṡ5H2O in double distilled water was chosen as the starting solution for the preparation of the films. The stock solution was delivered to nozzle with constant and uniform flow rate of 70 ml/h by Syringe pump SK5001. Sono-tek spray nozzle, driven by ultrasonic frequency of 120 kHz, converts the solution into fine spray. The aerosol produced by nozzle was sprayed on glass substrate heated at 150 °C. The sensing performance of the films was tested for various gases such as LPG, hydrogen, ethanol, carbon dioxide and ammonia. The sensor (30 min) showed high gas response (S = 3040 at 350 °C) on exposure of 1000 ppm of hydrogen and high selectivity against other gases. Its response time was short (2 s) and recovery was also fast (12 s). To understand reasons behind this uncommon gas sensing performance of the films, their structural, microstructural, and optical properties were studied using X-ray diffraction, electron microscopy (SEM and TEM) respectively. The results are interpreted

Fabrication of SnO2-TiO2 core-shell nanopillar-array films for enhanced photocatalytic activity

NASA Astrophysics Data System (ADS)

Cheng, Hsyi-En; Lin, Chun-Yuan; Hsu, Ching-Ming

2017-02-01

Immobilized or deposited thin film TiO2 photocatalysts are suffering from a low photocatalytic activity due to either a low photon absorption efficiency or a high carrier recombination rate. Here we demonstrate that the photocatalytic activity of TiO2 can be effectively improved by the SnO2-TiO2 core-shell nanopillar-array structure which combines the benefits of SnO2/TiO2 heterojunction and high reaction surface area. The SnO2-TiO2 core-shell nanopillar-array films were fabricated using atomic layer deposition and dry etching techniques via barrier-free porous anodic alumina templates. The photocatalytic activity of the prepared films was evaluated by methylene blue (MB) bleaching under 352 nm UV light irradiation. The results show that the photocatalytic activity of TiO2 film was 45% improved by introducing a SnO2 film between TiO2 and ITO glass substrate and was 300% improved by using the SnO2-TiO2 core-shell nanopillar-array structure. The 45% improvement by the SnO2 interlayer is attributed to the SnO2/TiO2 heterojunction which separates the photogenerated electron-hole pairs in TiO2 for MB degradation, and the high photocatalytic activity of the SnO2-TiO2 core-shell nanopillar-array films is attributed to the three dimensional SnO2/TiO2 heterojunction which owns both the carrier separation ability and the high photocatalytic reaction surface area.

Cr:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Varghese, Anitta Rose; B. Bhadrapriya, C.; Amarendra, G.; Hussain, Shamima

2018-04-01

Thin films of pure and Chromium doped SnO2 were synthesized using sol-gel method by spin coating technique. XRD studies confirmed the formation of tetragonal structure for SnO2 thin films. Variations in peak width and position were identified with doping. The optical band gap of the undoped films was found to be 3.8eV and varied with doping. Raman spectrum gave signature peaks of Sn-O and Cr-O bonds for undoped and doped films. The uniformity of the samples and formation of aggregates were observed from FESEM analysis.

A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jambure, S.B.; Patil, S.J.; Deshpande, A.R.

2014-01-01

Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. Themore » X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.« less

Toward DNA electrochemical sensing by free-standing ZnO nanosheets grown on 2D thin-layered MoS2.

PubMed

Yang, Tao; Chen, Meijing; Kong, Qianqian; Luo, Xiliang; Jiao, Kui

2017-03-15

Very recently, the 2-dimensional MoS 2 layer as base substrate integrated with other materials has caused people's emerging attention. In this paper, a thin-layered MoS 2 was prepared through an ultrasonic exfoliation method from bulk MoS 2 and then the free-standing ZnO nanosheet was electrodeposited on the MoS 2 scaffold for DNA sensing. The ZnO/MoS 2 nanocomposite revealed smooth and vertical nanosheets morphology by scanning electron microscopy, compared with the sole MoS 2 and sole ZnO. Importantly, the partially negative charged MoS 2 layer is beneficial to the nucleation and growth of ZnO nanosheets under the effect of electrostatic interactions. Classic methylene blue, which possesses different affinities to dsDNA and ssDNA, was adopted as the measure signal to confirm the immobilization and hybridization of DNA on ZnO nanosheets and pursue the optimal synthetic conditions. And the results demonstrated that the free-standing ZnO/MoS 2 nanosheets had low detection limit (6.6×10 -16 M) and has a positive influence on DNA immobilization and hybridization. Copyright © 2016 Elsevier B.V. All rights reserved.

Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

DTIC Science & Technology

2015-03-01

AFRL-RX-WP-JA-2015-0185 MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON SPUTTERING (POSTPRINT) A. N. Reed...COVERED (From – To) 29 January 2013 – 16 February 2015 4. TITLE AND SUBTITLE MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON...ABSTRACT High power impulse magnetron sputtering was used to deposit thin (~100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates

Effect of K-doping on structural and optical properties of ZnO thin films

NASA Astrophysics Data System (ADS)

Xu, Linhua; Li, Xiangyin; Yuan, Jun

2008-09-01

In this work, K-doped ZnO thin films were prepared by a sol-gel method on Si(111) and glass substrates. The effect of different K-doping concentrations on structural and optical properties of the ZnO thin films was studied. The results showed that the 1 at.% K-doped ZnO thin film had the best crystallization quality and the strongest ultraviolet emission ability. When the concentration of K was above 1 at.%, the crystallization quality and ultraviolet emission ability dropped. For the K-doped ZnO thin films, there was not only ultraviolet emission, but also a blue emission signal in their photoluminescent spectra. The blue emission might be connected with K impurity or/and the intrinsic defects (Zn interstitial and Zn vacancy) of the ZnO thin films.

Photocatalytic Antibacterial Performance of Glass Fibers Thin Film Coated with N-Doped SnO 2 /TiO 2

PubMed Central

Sikong, Lek; Niyomwas, Sutham; Rachpech, Vishnu

2014-01-01

Both N-doped and undoped thin films of 3SnO2/TiO2 composite were prepared, by sol-gel and dip-coating methods, and then calcined at 600°C for 2 hours. The films were characterized by FTIR, XRD, UV-Vis, SEM, and XPS, and their photocatalytic activities to degrade methylene blue in solution were determined, expecting these activities to correlate with the inactivation of bacteria, which was confirmed. The doped and undoped films were tested for activities against Gram-negative Escherichia coli (E. coli) and Salmonella typhi (S. typhi), and Gram-positive Staphylococcus aureus (S. aureus). The effects of doping on these composite films included reduced energy band gap, high crystallinity of anatase phase, and small crystallite size as well as increased photocatalytic activity and water disinfection efficiency. PMID:24693250

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

PubMed

Jeong, Yong Jin; An, Tae Kyu; Yun, Dong-Jin; Kim, Lae Ho; Park, Seonuk; Kim, Yebyeol; Nam, Sooji; Lee, Keun Hyung; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2016-03-02

Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.

Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

NASA Astrophysics Data System (ADS)

Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

2013-03-01

In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

Thin-walled SnO2 nanotubes functionalized with Pt and Au catalysts via the protein templating route and their selective detection of acetone and hydrogen sulfide molecules

NASA Astrophysics Data System (ADS)

Jang, Ji-Soo; Kim, Sang-Joon; Choi, Seon-Jin; Kim, Nam-Hoon; Hakim, Meggie; Rothschild, Avner; Kim, Il-Doo

2015-10-01

Bio-inspired Pt (~2 nm) and Au (~2.7 nm) catalysts encapsulated by a protein shell, i.e., Pt-apoferritin (Pt@AF) and Au-apoferriten (Au@AF), were synthesized via the hollow protein nanocage (apoferritin) templating route and directly functionalized on the interior and exterior walls of electrospun SnO2 nanotubes (NTs) during controlled single-nozzle electrospinning followed by high temperature calcination with heating rate control. Fast crystallization of the exterior shell and outward diffusion of the interior Sn precursors and crystallites result in the continued growth of a tubular wall, which is related to rapid heating driven Ostwald-ripening behavior. Very importantly, the Pt and Au nanoparticles (NPs) were immobilized onto thin-walled SnO2 NTs with a diameter of ~350 nm and a shell thickness of ~40 nm without any aggregation of catalysts due to high dispersibility, which originated from repulsive electrostatic (Coulombic) forces acting on the surface charged protein shells, leading to an enhanced catalytic effect and outstanding gas sensing properties. Pt-loaded SnO2 NTs exhibited superior acetone response (Rair/Rgas = 92 at 5 ppm) compared to pure SnO2 NFs (Rair/Rgas = 4.8 at 5 ppm) and SnO2 NTs (Rair/Rgas = 11 at 5 ppm) while Au-loaded SnO2 NTs showed a high response when exposed to hydrogen sulfide (Rair/Rgas = 34 at 5 ppm), offering selective gas detection with minimal cross-sensitivity against other interfering gases such as NH3, CO, NO, C6H5CH3, and C5H12. Our results provide a new insight into facile, cost-effective, and highly dispersible catalyst loading on the interior and exterior walls of hollow metal oxide NTs via simple electrospinning as a potential breath analyzer.Bio-inspired Pt (~2 nm) and Au (~2.7 nm) catalysts encapsulated by a protein shell, i.e., Pt-apoferritin (Pt@AF) and Au-apoferriten (Au@AF), were synthesized via the hollow protein nanocage (apoferritin) templating route and directly functionalized on the interior and exterior walls

Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses

NASA Astrophysics Data System (ADS)

Qu, Yunxiu; Yang, Jia; Li, Yunpeng; Zhang, Jiawei; Wang, Qingpu; Song, Aimin; Xin, Qian

2018-07-01

Bottom gated thin-film transistors (TFTs) with various sputtered SnO active layer thicknesses ranging from 10 to 30 nm and different passivation layers have been investigated. The device with 20 nm SnO showed the highest on/off ratio of 1.7 × 104 and the smallest subthreshold swing of 8.43 V dec‑1, and the mobility (0.76 cm2 V‑1 s‑1) was only slightly lower than in TFTs with a thicker SnO layer. However, both the mobility and the on/off ratio of the 15 nm SnO TFT dropped significantly by one order of magnitude. This indicated a strong influence of the top surface on the carrier transport, and we thus applied an organic or an inorganic encapsulation material to passivate the top surface. In the 20 nm TFT, the on/off ratio was doubled after passivation. The performance of the 15 nm TFT was improved even more dramatically with the on/off ratio increased by one order of magnitude and the mobility increased also significantly. Our experiment shows that polymethyl methacrylate passivation is more effective to reduce the shallow trap states, and Al2O3 is more effective in reducing the deep traps in the SnO channel.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhang, Lei

Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Sha Li, Chen; Li, Yu Ning; Wu, Yi Liang; Ong, Beng S.; Loutfy, Rafik O.

2008-06-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films

NASA Astrophysics Data System (ADS)

Li, D. Y.; Zeng, Y. J.; Pereira, L. M. C.; Batuk, D.; Hadermann, J.; Zhang, Y. Z.; Ye, Z. Z.; Temst, K.; Vantomme, A.; Van Bael, M. J.; Van Haesendonck, C.

2013-07-01

Oriented Co nanoparticles were obtained by Co ion implantation in crystalline ZnO thin films grown by pulsed laser deposition. Transmission electron microscopy revealed the presence of elliptically shaped Co precipitates with nanometer size, which are embedded in the ZnO thin films, resulting in anisotropic magnetic behavior. The low-temperature resistance of the Co-implanted ZnO thin films follows the Efros-Shklovskii type variable-range-hopping. Large negative magnetoresistance (MR) exceeding 10% is observed in a magnetic field of 1 T at 2.5 K and the negative MR survives up to 250 K (0.3%). The negative MR reveals hysteresis as well as anisotropy that correlate well with the magnetic properties, clearly demonstrating the presence of spin-dependent transport.

Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

NASA Astrophysics Data System (ADS)

Sun, Y.; Ashida, K.; Sasaki, S.; Koyama, M.; Maemoto, T.; Sasa, S.; Kasai, S.; Iñiguez-de-la-Torre, I.; González, T.

2015-10-01

Fully transparent zinc oxide (ZnO) based thin-film transistors (TFTs) and a new type of rectifiers calls self-switching nano-diodes (SSDs) were fabricated on glass substrates at room temperature by using low resistivity and transparent conducting Al- doped ZnO (AZO) thin-films. The deposition conditions of AZO thin-films were optimized with pulsed laser deposition (PLD). AZO thin-films on glass substrates were characterized and the transparency of 80% and resistivity with 1.6*10-3 Ωcm were obtained of 50 nm thickness. Transparent ZnO-TFTs were fabricated on glass substrates by using AZO thin-films as electrodes. A ZnO-TFT with 2 μm long gate device exhibits a transconductance of 400 μS/mm and an ON/OFF ratio of 2.8*107. Transparent ZnO-SSDs were also fabricated by using ZnO based materials and clear diode-like characteristics were observed.

Vertically building Zn2SnO4 nanowire arrays on stainless steel mesh toward fabrication of large-area, flexible dye-sensitized solar cells.

PubMed

Li, Zhengdao; Zhou, Yong; Bao, Chunxiong; Xue, Guogang; Zhang, Jiyuan; Liu, Jianguo; Yu, Tao; Zou, Zhigang

2012-06-07

Zn(2)SnO(4) nanowire arrays were for the first time grown onto a stainless steel mesh (SSM) in a binary ethylenediamine (En)/water solvent system using a solvothermal route. The morphology evolution following this reaction was carefully followed to understand the formation mechanism. The SSM-supported Zn(2)SnO(4) nanowire was utilized as a photoanode for fabrication of large-area (10 cm × 5 cm size as a typical sample), flexible dye-sensitized solar cells (DSSCs). The synthesized Zn(2)SnO(4) nanowires exhibit great bendability and flexibility, proving potential advantage over other metal oxide nanowires such as TiO(2), ZnO, and SnO(2) for application in flexible solar cells. Relative to the analogous Zn(2)SnO(4) nanoparticle-based flexible DSSCs, the nanowire geometry proves to enhance solar energy conversion efficiency through enhancement of electron transport. The bendable nature of the DSSCs without obvious degradation of efficiency and facile scale up gives the as-made flexible solar cell device potential for practical application.

Highly sensitive SnO2 sensor via reactive laser-induced transfer

PubMed Central

Palla Papavlu, Alexandra; Mattle, Thomas; Temmel, Sandra; Lehmann, Ulrike; Hintennach, Andreas; Grisel, Alain; Wokaun, Alexander; Lippert, Thomas

2016-01-01

Gas sensors based on tin oxide (SnO2) and palladium doped SnO2 (Pd:SnO2) active materials are fabricated by a laser printing method, i.e. reactive laser-induced forward transfer (rLIFT). Thin films from tin based metal-complex precursors are prepared by spin coating and then laser transferred with high resolution onto sensor structures. The devices fabricated by rLIFT exhibit low ppm sensitivity towards ethanol and methane as well as good stability with respect to air, moisture, and time. Promising results are obtained by applying rLIFT to transfer metal-complex precursors onto uncoated commercial gas sensors. We could show that rLIFT onto commercial sensors is possible if the sensor structures are reinforced prior to printing. The rLIFT fabricated sensors show up to 4 times higher sensitivities then the commercial sensors (with inkjet printed SnO2). In addition, the selectivity towards CH4 of the Pd:SnO2 sensors is significantly enhanced compared to the pure SnO2 sensors. Our results indicate that the reactive laser transfer technique applied here represents an important technical step for the realization of improved gas detection systems with wide-ranging applications in environmental and health monitoring control. PMID:27118531

Self-cleaning antimicrobial surfaces by bio-enabled growth of SnO2 coatings on glass

NASA Astrophysics Data System (ADS)

André, Rute; Natalio, Filipe; Tahir, Muhammad Nawaz; Berger, Rüdiger; Tremel, Wolfgang

2013-03-01

Conventional vapor-deposition techniques for coatings require sophisticated equipment and/or high-temperature resistant substrates. Therefore bio-inspired techniques for the fabrication of inorganic coatings have been developed in recent years. Inspired by the biology behind the formation of the intricate skeletons of diatoms orchestrated by a class of cationic polyamines (silaffins) we have used surface-bound spermine, a naturally occurring polyamine, to promote the fast deposition of homogeneous, thin and transparent biomimetic SnO2 coatings on glass surfaces. The bio-enabled SnO2 film is highly photoactive, i.e. it generates superoxide radicals (O2&z.rad;-) upon sunlight exposure resulting in a strong degradation of organic contaminants and a strong antimicrobial activity. Upon illumination the biomimetic SnO2 coating exhibits a switchable amphiphilic behavior, which - in combination with its photoactivity - creates a self-cleaning surface. The intrinsic self-cleaning properties could lead to the development of new protective, antifouling coatings on various substrates.Conventional vapor-deposition techniques for coatings require sophisticated equipment and/or high-temperature resistant substrates. Therefore bio-inspired techniques for the fabrication of inorganic coatings have been developed in recent years. Inspired by the biology behind the formation of the intricate skeletons of diatoms orchestrated by a class of cationic polyamines (silaffins) we have used surface-bound spermine, a naturally occurring polyamine, to promote the fast deposition of homogeneous, thin and transparent biomimetic SnO2 coatings on glass surfaces. The bio-enabled SnO2 film is highly photoactive, i.e. it generates superoxide radicals (O2&z.rad;-) upon sunlight exposure resulting in a strong degradation of organic contaminants and a strong antimicrobial activity. Upon illumination the biomimetic SnO2 coating exhibits a switchable amphiphilic behavior, which - in combination with its

Gas Sensing Properties of ZnO-SnO2 Nanostructures.

PubMed

Chen, Weigen; Li, Qianzhu; Xu, Lingna; Zeng, Wen

2015-02-01

One-dimensional (1D) semiconductor metal oxide nanostructures have attracted increasing attention in electrochemistry, optics, magnetic, and gas sensing fields for the good properties. N-type low dimensional semiconducting oxides such as SnO2 and ZnO have been known for the detection of inflammable or toxic gases. In this paper, we fabricated the ZnO-SnO2 and SnO2 nanoparticles by hydrothermal synthesis. Microstructure characterization was performed using X-ray diffraction (XRD) and surface morphologies for both the pristine and doped samples were observed using field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Then we made thin film gas sensor to study the gas sensing properties of ZnO-SnO2 and SnO2 gas sensor to H2 and CO. A systematic comparison study reveals an enhanced gas sensing performance for the sensor made of SnO2 and ZnO toward H2 and CO over that of the commonly applied undecorated SnO2 nanoparticles. The improved gas sensing properties are attributed to the size of grains and pronounced electron transfer between the compound nanostructures and the absorbed oxygen species as well as to the heterojunctions of the ZnO nanoparticles to the SnO2 nanoparticles, which provide additional reaction rooms. The results represent an advance of compound nanostructures in further enhancing the functionality of gas sensors, and this facile method could be applicable to many sensing materials, offering a new avenue and direction to detect gases of interest based on composite tin oxide nanoparticles.

Enhanced gas sensing correlated with structural and optical properties of Cs-loaded SnO2 nanofilms

NASA Astrophysics Data System (ADS)

Elia Raine, P. J.; Arun George, P.; Balasundaram, O. N.; Varghese, T.

2016-09-01

The Cs-loaded SnO2 thin films were prepared by the spray pyrolysis technique and were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectroscopy, impedance spectroscopy and conductometric method. Investigations based on the structural, optical and electrical properties confirm an enhanced gas sensing potential of cesium-loaded tin oxide films. It is found that the tin oxide thin film doped with 4% Cs with a mean grain size of 20 nm at a deposition temperature of 350 ° C show a maximum sensor response of 97.5% for LPG consistently. It is also observed that the sensor response of Cs-doped SnO2 thin films depends on the dopant concentration and the deposition temperature of the film.

High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions

PubMed Central

Xie, Ting; Hasan, Md Rezaul; Qiu, Botong; Arinze, Ebuka S.; Nguyen, Nhan V.; Motayed, Abhishek; Thon, Susanna M.; Debnath, Ratan

2017-01-01

We report on the significant performance enhancement of SnO2 thin film ultraviolet (UV) photodetectors (PDs) through incorporation of CuO/SnO2 p-n nanoscale heterojunctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in ambient to form CuO. We attribute the performance improvements to enhanced UV absorption, demonstrated both experimentally and using optical simulations, and electron transfer facilitated by the nanoheterojunctions. The peak responsivity of the PDs at a bias of 0.2 V improved from 1.9 A/W in a SnO2-only device to 10.3 A/W after CuO deposition. The wavelength-dependent photocurrent-to-dark current ratio was estimated to be ~ 592 for the CuO/SnO2 PD at 290 nm. The morphology, distribution of nanoparticles, and optical properties of the CuO/SnO2 heterostructured thin films are also investigated. PMID:28729741

Photoelectrochemical properties of highly mobilized Li-doped ZnO thin films.

PubMed

Shinde, S S; Bhosale, C H; Rajpure, K Y

2013-03-05

Li-doped ZnO thin films with preferred (002) orientation have been prepared by spray pyrolysis technique in aqueous medium on to the corning glass substrates. The effect of Li-doping on to the photoelectrochemical, structural, morphological, optical, luminescence, electrical and thermal properties has been investigated. XRD and Raman study indicates that the films have hexagonal crystal structure. The transmittance, reflectance, refractive index, extinction coefficient and bandgap have been analyzed by optical study. PL spectra consist of a near band edge and visible emission due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial zinc (Zni), interstitial oxygen (Oi) and zinc vacancy (VZn). The Li-doped ZnO films prepared for 1at% doping possesses the highest electron mobility of 102cm(2)/Vs and carrier concentration of 3.62×10(19)cm(-3). Finally, degradation of 2,4,6-Trinitrotoluene using Li-doped ZnO thin films has been reported. Copyright © 2013 Elsevier B.V. All rights reserved.

The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD

NASA Astrophysics Data System (ADS)

Kim, Doyoung; Kang, Hyemin; Kim, Jae-Min; Kim, Hyungjun

2011-02-01

Zinc oxide (ZnO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD) using oxygen plasma as a reactant and the properties were compared with those of thermal atomic layer deposition (TH-ALD) ZnO thin films. While hexagonal wurzite phase with preferential (0 0 2) orientation was obtained for both cases, significant differences were observed in various aspects of film properties including resistivity values between these two techniques. Photoluminescence (PL) measurements have shown that high resistivity of PE-ALD ZnO thin films is due to the oxygen interstitials at low growth temperature of 200 °C, whose amount decreases with increasing growth temperature. Thin film transistors (TFT) using TH- and PE-ALD ZnO as an active layer were also fabricated and the device properties were evaluated comparatively.

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

NASA Astrophysics Data System (ADS)

Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

2014-01-01

The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

Thickness dependence of crystal and optical characterization on ZnO thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Baek, Seung-Hye; Lee, Hyun-Jin; Lee, Sung-Nam

2018-06-01

We studied the thickness dependence of the crystallographic and optical properties of ZnO thin films grown on c-plane sapphire substrate using atomic layer deposition. High-resolution X-ray diffraction (HR-XRD) revealed two peaks at 34.5° and 36.2° in the initial growth stage of ZnO on the sapphire substrate, corresponding to the (002) and (101) ZnO planes, respectively. However, as the thickness of the ZnO film increased, the XRD intensity of the (002) ZnO peak increased drastically, compared with that of the (101) ZnO peak. This indicated that (002) and (101) ZnO were simultaneously grown on the c-plane sapphire substrate in the initial growth stage, and that (002) ZnO was predominantly grown with the increase in the thickness of ZnO film. The ZnO thin film presented an anisotropic surface structure at the initial stage, whereas the isotropic surface morphology was developed with an increase in the film thickness of ZnO. These observations were consistent with the HR-XRD results.

Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

NASA Astrophysics Data System (ADS)

Boyadjiev, S. I.; Georgieva, V.; Yordanov, R.; Raicheva, Z.; Szilágyi, I. M.

2016-11-01

Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO2 was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO2 already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO2.

Effect of Al doping on performance of ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

2018-03-01

In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition.

PubMed

Mino, Lorenzo; Gianolio, Diego; Bardelli, Fabrizio; Prestipino, Carmelo; Senthil Kumar, E; Bellarmine, F; Ramanjaneyulu, M; Lamberti, Carlo; Ramachandra Rao, M S

2013-09-25

Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni(0) nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

Influence of hydrogen on the structure and stability of ultra-thin ZnO on metal substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bieniek, Bjoern; Hofmann, Oliver T.; Institut für Festkörperphysik, TU Graz, 8010 Graz

2015-03-30

We investigate the atomic and electronic structure of ultra-thin ZnO films (1 to 4 layers) on the (111) surfaces of Ag, Cu, Pd, Pt, Ni, and Rh by means of density-functional theory. The ZnO monolayer is found to adopt an α-BN structure on the metal substrates with coincidence structures in good agreement with experiment. Thicker ZnO layers change into a wurtzite structure. The films exhibit a strong corrugation, which can be smoothed by hydrogen (H) adsorption. An H over-layer with 50% coverage is formed at chemical potentials that range from low to ultra-high vacuum H{sub 2} pressures. For the Agmore » substrate, both α-BN and wurtzite ZnO films are accessible in this pressure range, while for Cu, Pd, Pt, Rh, and Ni wurtzite films are favored. The surface structure and the density of states of these H passivated ZnO thin films agree well with those of the bulk ZnO(0001{sup ¯})-2×1-H surface.« less

Surface-emitting stimulated emission in high-quality ZnO thin films

NASA Astrophysics Data System (ADS)

Zhang, X. Q.; Suemune, Ikuo; Kumano, H.; Wang, J.; Huang, S. H.

2004-10-01

High-quality ZnO thin films were grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Three excitonic transitions associated with the valence bands A, B, and C were clearly revealed in the reflectance spectrum measured at 33K. This result indicates that the ZnO thin films have the wurtzite crystalline structure. The emission spectra were measured with backscattering geometry at room temperature. When the excitation exceeded a certain value, linewidth narrowing, nonlinear rise of emission intensity, and the shortening of the carrier lifetime were clearly observed and these demonstrate the onset of stimulated emission. Together with the ZnO thickness dependence, we conclude that the observation of a stimulated emission in a direction perpendicular to the film surface is predominantly due to scattering of the in-plane stimulated emission by slightly remaining surface undulations in the ZnO films.

Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

NASA Astrophysics Data System (ADS)

Muslih, E. Y.; Kim, K. H.

2017-07-01

Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

Slow positron beam study of hydrogen ion implanted ZnO thin films

NASA Astrophysics Data System (ADS)

Hu, Yi; Xue, Xudong; Wu, Yichu

2014-08-01

The effects of hydrogen related defect on the microstructure and optical property of ZnO thin films were investigated by slow positron beam, in combination with x-ray diffraction, infrared and photoluminescence spectroscopy. The defects were introduced by 90 keV proton irradiation with doses of 1×1015 and 1×1016 ions cm-2. Zn vacancy and OH bonding (VZn+OH) defect complex were identified in hydrogen implanted ZnO film by positron annihilation and infrared spectroscopy. The formation of these complexes led to lattice disorder in hydrogen implanted ZnO film and suppressed the luminescence process.

Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Çorlu, Tugba; Karaduman, Irmak; Yildirim, Memet Ali; Ateş, Aytunç; Acar, Selim

2017-07-01

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.

ZnO thin film piezoelectric MEMS vibration energy harvesters with two piezoelectric elements for higher output performance.

PubMed

Wang, Peihong; Du, Hejun

2015-07-01

Zinc oxide (ZnO) thin film piezoelectric microelectromechanical systems (MEMS) based vibration energy harvesters with two different designs are presented. These harvesters consist of a silicon cantilever, a silicon proof mass, and a ZnO piezoelectric layer. Design I has a large ZnO piezoelectric element and Design II has two smaller and equally sized ZnO piezoelectric elements; however, the total area of ZnO thin film in two designs is equal. The ZnO thin film is deposited by means of radio-frequency magnetron sputtering method and is characterized by means of XRD and SEM techniques. These ZnO energy harvesters are fabricated by using MEMS micromachining. The natural frequencies of the fabricated ZnO energy harvesters are simulated and tested. The test results show that these two energy harvesters with different designs have almost the same natural frequency. Then, the output performance of different ZnO energy harvesters is tested in detail. The effects of series connection and parallel connection of two ZnO elements on the load voltage and power are also analyzed. The experimental results show that the energy harvester with two ZnO piezoelectric elements in parallel connection in Design II has higher load voltage and higher load power than the fabricated energy harvesters with other designs. Its load voltage is 2.06 V under load resistance of 1 MΩ and its maximal load power is 1.25 μW under load resistance of 0.6 MΩ, when it is excited by an external vibration with frequency of 1300.1 Hz and acceleration of 10 m/s(2). By contrast, the load voltage of the energy harvester of Design I is 1.77 V under 1 MΩ resistance and its maximal load power is 0.98 μW under 0.38 MΩ load resistance when it is excited by the same vibration.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

NASA Astrophysics Data System (ADS)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

Fabrication and good ethanol sensing of biomorphic SnO2 with architecture hierarchy of butterfly wings.

PubMed

Song, Fang; Su, Huilan; Han, Jie; Zhang, Di; Chen, Zhixin

2009-12-09

Using super-hydrophobic butterfly wings as templates, we developed an aqueous sol-gel soakage process assisted by ethanol-wetting and followed by calcination to fabricate well-organized porous hierarchical SnO(2) with connective hollow interiors and thin mesoporous walls. The exquisite hierarchical architecture of SnO(2) is faithfully replicated from the lightweight skeleton of butterfly wings at the level from nano- to macro-scales. On the basis of the self-assembly of SnO(2) nanocrystallites with diameter around 7.0 nm, the interconnected tubes (lamellas), the fastigiated hollow tubers (pillars) and the double-layered substrates further construct the biomorphic hierarchical architecture. Benefiting from the small grain size and the unique hierarchical architecture, the biomorphic SnO(2) as an ethanol sensor exhibits high sensitivity (49.8 to 50 ppm ethanol), and fast response/recovery time (11/31 s to 50 ppm ethanol) even at relatively low working temperature (170 degrees C).

Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

NASA Astrophysics Data System (ADS)

Li, Jin; Bi, Xiaofang

2016-07-01

Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

Nano SnO 2-Al 2O 3 mixed oxide and SnO 2-Al 2O 3-carbon composite oxides as new and novel electrodes for supercapacitor applications

NASA Astrophysics Data System (ADS)

Jayalakshmi, M.; Venugopal, N.; Raja, K. Phani; Rao, M. Mohan

New nano-materials like SnO 2-Al 2O 3 and SnO 2-Al 2O 3-carbon were synthesized by a single step hydrothermal method in searching for novel mixed oxides with high electrochemical double layer capacitance. A SnO 2-Al 2O 3-carbon sample was calcined at 600 °C and tested for its performance. The source of carbon was tetrapropyl ammonium hydroxide. The capacitive behavior of SnO 2 was compared to the performance of SnO 2-Al 2O 3, SnO 2-Al 2O 3-carbon and calcined SnO 2-Al 2O 3-carbon using the techniques of cyclic voltammetry, double potential step, chronopotentiometry and E-log I polarization. In 0.1 M NaCl solutions, SnO 2-Al 2O 3 gave the best performance with a value of 119 Fg -1 and cycled 1000 times. The nano-material mixed oxides were characterized by TEM, XRD, ICP-AES and SEM-EDAX.

Formation of p-type ZnO thin film through co-implantation

NASA Astrophysics Data System (ADS)

Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

2017-01-01

We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

Effect of Pre-Annealing on Thermal and Optical Properties of ZnO and Al-ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saravanan, P.; Gnanavelbabu, A.; Pandiaraj, P.

Zinc oxide (ZnO) nanoparticles were synthesized by a simple solution route method using zinc acetate as the precursor and ethanol as the solvent. At a temperature of 60∘C, a clear homogenous solution is heated to 100∘C for ethanol evaporation. Then the obtained precursor powder is annealed at 600∘C for the formation of ZnO nanocrystalline structure. Doped ZnO particle is also prepared by using aluminum nitrate nonahydrate to produce aluminum (Al)-doped nanoparticles using the same solution route method followed by annealing. Thin film fabrication is done by air evaporation method using the polymer polyvinyl alcohol (PVA). To analyze the optical and thermal properties for undoped and doped ZnO nanocrystalline thin film by precursor annealing, characterizations such as UV, FTIR, AFM, TGA/DTA, XRD, EDAX and Photoluminescence (PL) were also taken. It was evident that precursor annealing had great influence on thermal and optical properties of thin films while ZnO and AZO film showed low crystallinity and intensity than in the powder form. TGA/DTA suggests pre-annealing effect improves the thermal stability, which ensures that Al ZnO nanoparticle can withstand at high temperature too which is the crucial advantage in the semiconductor devices. UV spectroscopy confirmed the presence of ZnO nanoparticles in the thin film by an absorbance peak observed at 359nm with an energy bandgap of 3.4eV. A peak obtained at 301nm with an energy bandgap of 4.12eV shows a blue shift due to the presence of Al-doped ZnO nanoparticles. Both ZnO and AZO bandgap increased due to precursor annealing. In this research, PL spectrum is also studied in order to determine the optical property of the nanoparticle embedded thin film. From PL spectrum, it is observed that the intensity of the doped ZnO is much more enhanced as the dopant concentration is increased to 1wt.% and 2wt.% of Al in ZnO.

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

NASA Astrophysics Data System (ADS)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

PubMed

Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

2013-04-07

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

Growth and characterization of highly conducting Al-doped ZnO (AZO) thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Sardana, Sanjay K.; Singh, Anil; Srivastava, Sanjay K.; Pandya, Dinesh K.

2018-05-01

A comparative study of undoped ZnO and Al-doped ZnO (AZO) thin films deposited on glass substrate by spray pyrolysis has been carried out at various aqueous molar concentration of zinc acetate. The thin films deposited on glass shows the wurtzite phase of ZnO, confirmed by X-ray diffraction. The optical study shows the high transmittance over 80% in the visible regime. The band gap of AZO thin films shows a blue shift as compared to undoped ZnO, which has been attributed to Burstein-Moss shift. Heat treatment of these samples in vacuum showed the improved conductivity in compared to as-deposited thin films. The electric study shows the minimum resistivity of 8 x 10-3 Ω-cm and carrier concentration of 6.5 × 1019 /cm3 correspond to AZO thin films.

Synthesis of ZnO nanowires for thin film network transistors

NASA Astrophysics Data System (ADS)

Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.

2008-08-01

Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.

Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-02-01

ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com

2015-06-24

We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption ofmore » ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.« less

Modification of crystal anisotropy and enhancement of magnetic moment of Co-doped SnO2 thin films annealed under magnetic field

PubMed Central

2014-01-01

Co-doped SnO2 thin films were grown by sputtering technique on SiO2/Si(001) substrates at room temperature, and then, thermal treatments with and without an applied magnetic field (HTT) were performed in vacuum at 600°C for 20 min. HTT was applied parallel and perpendicular to the substrate surface. Magnetic M(H) measurements reveal the coexistence of a strong antiferromagnetic (AFM) signal and a ferromagnetic (FM) component. The AFM component has a Néel temperature higher than room temperature, the spin axis lies parallel to the substrate surface, and the highest magnetic moment m =7 μB/Co at. is obtained when HTT is applied parallel to the substrate surface. Our results show an enhancement of FM moment per Co+2 from 0.06 to 0.42 μB/Co at. for the sample on which HTT was applied perpendicular to the surface. The FM order is attributed to the coupling of Co+2 ions through electrons trapped at the site of oxygen vacancies, as described by the bound magnetic polaron model. Our results suggest that FM order is aligned along [101] direction of Co-doped SnO2 nanocrystals, which is proposed to be the easy magnetization axis. PMID:25489286

Enhanced optical band-gap of ZnO thin films by sol-gel technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.

2016-05-06

Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The resultsmore » of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.« less

Label-free SnO2 nanowire FET biosensor for protein detection

NASA Astrophysics Data System (ADS)

Jakob, Markus H.; Dong, Bo; Gutsch, Sebastian; Chatelle, Claire; Krishnaraja, Abinaya; Weber, Wilfried; Zacharias, Margit

2017-06-01

Novel tin oxide field-effect-transistors (SnO2 NW-FET) for pH and protein detection applicable in the healthcare sector are reported. With a SnO2 NW-FET the proof-of-concept of a bio-sensing device is demonstrated using the carrier transport control of the FET channel by a (bio-) liquid modulated gate. Ultra-thin Al2O3 fabricated by a low temperature atomic layer deposition (ALD) process represents a sensitive layer to H+ ions safeguarding the nanowire at the same time. Successful pH sensitivity is demonstrated for pH ranging from 3 to 10. For protein detection, the SnO2 NW-FET is functionalized with a receptor molecule which specifically interacts with the protein of interest to be detected. The feasibility of this approach is demonstrated via the detection of a biotinylated protein using a NW-FET functionalized with streptavidin. An immediate label-free electronic read-out of the signal is shown. The well-established Enzyme-Linked Immunosorbent Assay (ELISA) method is used to determine the optimal experimental procedure which would enable molecular binding events to occur while being compatible with a final label-free electronic read-out on a NW-FET. Integration of the bottom-up fabricated SnO2 NW-FET pH- and biosensor into a microfluidic system (lab-on-a-chip) allows the automated analysis of small volumes in the 400 μl range as would be desired in portable on-site point-of-care (POC) devices for medical diagnosis.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2

NASA Astrophysics Data System (ADS)

Ates, H.; Bolat, S.; Oruc, F.; Okyay, A. K.

2018-05-01

Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.

Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

NASA Astrophysics Data System (ADS)

Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

2015-11-01

The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

Effect of Ag doping on the properties of ZnO thin films for UV stimulated emission

NASA Astrophysics Data System (ADS)

Razeen, Ahmed S.; Gadallah, A.-S.; El-Nahass, M. M.

2018-06-01

Ag doped ZnO thin films have been prepared using sol-gel spin coating method, with different doping concentrations. Structural and morphological properties of the films have been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Thin films have been optically pumped and stimulated emission has been observed with strong peaks in the UV region. The UV stimulated emission is found to be due to exciton-exciton scattering, and Ag doping promoted this process by increasing the excitons concentrations in the ZnO lattice. Output-input intensity relation and peak emission, FWHM, and quantum efficiency relations with pump intensity have been reported. The threshold for which stimulated emission started has been evaluated to be about 18 MW/cm2 with quantum efficiency of about 58.7%. Mechanisms explaining the role of Ag in enhancement of stimulated emission from ZnO thin films have been proposed.

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

The investigation of the Cr doped ZnO thin films deposited by thermionic vacuum arc technique

NASA Astrophysics Data System (ADS)

Mohammadigharehbagh, Reza; Pat, Suat; Musaoglu, Caner; Korkmaz, Şadan; Özen, Soner

2018-02-01

Cr doped ZnO thin films were prepared onto glass and polyethylene terephthalate (PET) substrates using thermionic vacuum arc. XRD patterns show the polycrystalline nature of the films. Cr, Zn, ZnO and Cr2O3 were detected in the layers. The mean crystallite sizes of the films were calculated about 20 nm for the films onto glass and PET substrates. The maximum dislocation density and internal strain values of the films are calculated. According to the optical analysis, the average transmittance and reflectance of the films were found to be approximately 53% and 16% for glass and PET substrates, respectively. The mean refractive index of the layer decreased to 2.15 from 2.38 for the PET substrate. The band gap values of the Cr-doped ZnO thin films were determined as 3.10 and 3.13 eV for glass and PET substrates.

Electrical and optical properties of p-type codoped ZnO thin films prepared by spin coating technique

NASA Astrophysics Data System (ADS)

Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

2016-03-01

Undoped, doped and codoped ZnO thin films were synthesized on glass substrates using a spin coating technique. Zinc acetate dihydrate, ammonium acetate and aluminum nitrate were used as precursor for zinc, nitrogen and aluminum, respectively. X-ray diffraction shows that the thin films have a hexagonal wurtzite structure for the undoped, doped and co-doped ZnO. The transmittance of the films was above 80% and the band gap of the film varied from 3.20 eV to 3.24 eV for undoped and doped ZnO. An energy band diagram to describe the photoluminescence from the thin films was also constructed. This diagram includes the various defect levels and possible quasi-Fermi levels. A minimum resistivity of 0.0834 Ω-cm was obtained for the N and Al codoped ZnO thin films with p-type carrier conductivity. These ZnO films can be used as a window layer in solar cells and in UV lasers.

Preparation and characterization of ZnS thin films by the chemical bath deposition method (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ando, Shizutoshi; Iwashita, Taisuke

2017-06-01

Nowadays, the conversion efficiency of Cu(In･Ga)Se2 (CIGS)-based solar cell already reached over 20%. CdS thin films prepared by chemical bath deposition (CBD) method are used for CIGS-based thin film solar cells as the buffer layer. Over the past several years, a considerable number of studies have been conducted on ZnS buffer layer prepared by CBD in order to improve in conversion efficiency of CIGS-based solar cells. In addition, application to CIGS-based solar cell of ZnS buffer layer is expected as an eco-friendly solar cell by cadmium-free. However, it was found that ZnS thin films prepared by CBD included ZnO or Zn(OH)2 as different phase [1]. Nakata et. al reported that the conversion efficiency of CIGS-based solar cell using ZnS buffer layer (CBD-ZnS/CIGS) reached over 18% [2]. The problem which we have to consider next is improvement in crystallinity of ZnS thin films prepared by CBD. In this work, we prepared ZnS thin films on quarts (Si02) and SnO2/glass substrates by CBD with the self-catalysis growth process in order to improve crystallinity and quality of CBD-ZnS thin films. The solution to use for CBD were prepared by mixture of 0.2M ZnI2 or ZnSO4, 0.6M (NH2)2CS and 8.0M NH3 aq. In the first, we prepared the particles of ZnS on Si02 or SnO2/glass substrates by CBD at 80° for 20 min as initial nucleus (1st step ). After that, the particles of ZnS on Si02 or SnO2/glass substrates grew up to be ZnS thin films by CBD method at 80° for 40 min again (2nd step). We found that the surface of ZnS thin films by CBD with the self-catalyst growth process was flat and smooth. Consequently, we concluded that the CBD technique with self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement of crystallinity of ZnS thin films on SnO2/glass. [1] J.Vidal et,al., Thin Solid Films 419 (2002) 118. [2] T.Nakata et.al., Jpn. J. Appl. Phys. 41(2B), L165-L167 (2002)

Role of Ni doping on transport properties of ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dar, Tanveer Ahmad, E-mail: tanveerphysics@gmail.com; Agrawal, Arpana; Sen, Pratima

2015-06-24

Nickel doped (Ni=0.05) and undoped Zinc Oxide (ZnO) thin films have been prepared by Pulsed laser deposition (PLD) technique. The structural analysis of the films was done by X-ray diffraction (XRD) studies which reveal absence of any secondary phase in the prepared samples. UV transmission spectra show that Ni doping reduces the transparency of the films. X-ray Photoelectron spectroscopy (XPS) also shows the presence of metallic Ni along with +2 oxidation state in the sample. Low temperature magneto transport properties of the ZnO and NiZnO films are also discussed in view of Khosla fisher model. Ni doping in ZnO resultsmore » in decrease in magnitude of negative MR.« less

Estimation of electron–phonon coupling and Urbach energy in group-I elements doped ZnO nanoparticles and thin films by sol–gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vettumperumal, R.; Kalyanaraman, S., E-mail: mayura_priya2003@yahoo.co.in; Santoshkumar, B.

Highlights: • Comparison of group-I elements doped ZnO nanoparticles and thin films. • Calculation of electron–phonon coupling and phonon lifetime from Raman spectroscopy. • Estimation of interband states from Urbach energy. - Abstract: Group-I (Li, Na, K & Cs) elements doped ZnO nanoparticles (NPs) and thin films were prepared using sol–gel method. XRD data and TEM images confirm the absence of any other secondary phase different from wurtzite type ZnO. Spherical shapes of grains are observed from the surfaces of doped ZnO films by atomic force microscope images (AFM) and presences of dopants are confirmed from energy dispersive X-ray spectra.more » The Raman active E{sub 2} (high), E{sub 2} (low), E{sub 1} and A{sub 1} (LO) modes are observed from both ZnO NPs and thin films. First-order longitudinal optical (LO) phonon is found to have contributions from direct band transition and localized excitons. Electron–phonon coupling, phonon lifetime and deformation energy of ZnO are calculated based on the effect of dopants with respect to the multiple Raman LO phonon scattering. Presence of localized interbands states in doped ZnO NPs and thin films are found from the Urbach energy calculations.« less

Effect of copper doping on the photocatalytic activity of ZnO thin films prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Saidani, T.; Zaabat, M.; Aida, M. S.; Boudine, B.

2015-12-01

In the present work, we prepared undoped and copper doped ZnO thin films by the sol-gel dip coating method on glass substrates from zinc acetate dissolved in a solution of ethanol. The objective of our work is to study the effect of Cu doping with different concentrations on structural, morphological, optical properties and photocatalytic activity of ZnO thin films. For this purpose, we have used XRD to study the structural properties, and AFM to determine the morphology of the surface of the ZnO thin films. The optical properties and the photocatalytic degradation of the films were examined by UV-visibles spectrophotometer. The Tauc method was used to estimate the optical band gap. The XRD spectra indicated that the films have an hexagonal wurtzite structure, which gradually deteriorated with increasing Cu concentration. The results showed that the incorporation of Cu decreases the crystallite size. The AFM study showed that an increase of the concentration of Cu causes the decrease of the surface roughness, which passes from 20.2 for Un-doped ZnO to 12.16 nm for doped ZnO 5 wt% Cu. Optical measurements have shown that all the deposited films show good optical transmittance (77%-92%) in the visible region and increases the optical gap with increasing Cu concentration. The presence of copper from 1% to 5 wt% in the ZnO thin films is found to decelerate the photocatalytic process.

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

Junction Quality of SnO2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling.

PubMed

Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun; Gorman, Brian P; Ye, Jichun; Jiang, Chun-Sheng; Yan, Yanfa; Al-Jassim, Mowafak M

2017-11-08

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on the cross section of SnO 2 -based PS solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having an identical device structure: (1) cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; (2) cells with an intrinsic SnO 2 thin layer on the top of FTO as an effective ESL; and (3) cells with the SnO 2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO 2 -ESL < SnO 2 + SAM; this sequence explains the improvements of the fill factor (FF) and open-circuit voltage (V oc ). The improvement of the FF from the FTO to SnO 2 -ESL cells may result from the reduction in voltage loss at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding an SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. These nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO 2 -based ESL material quality and the ESL/PS interface.

Structural, chemical and optical properties of SnO2 NPs obtained by three different synthesis routes

NASA Astrophysics Data System (ADS)

Drzymała, Elżbieta; Gruzeł, Grzegorz; Depciuch, Joanna; Budziak, Andrzej; Kowal, Andrzej; Parlinska-Wojtan, Magdalena

2017-08-01

Polyol (P), chemical precipitation (C) and microwave-assisted (M) syntheses were chosen to produce SnO2 nanoparticles with uniform size and minimum agglomeration. Their structural, chemical and optical properties were investigated using dynamic light scattering (DLS), scanning transmission electron microscopy (STEM), Raman, Fourier Transform Infrared (FTIR) using the Attenuated Total Reflectance (ATR) technique and Ultraviolet-Visible (UV-Vis) spectroscopies. STEM observations showed that the SnO2(P) and SnO2(C) nanoparticles (NPs) are combined into larger agglomerates with heterogeneous thickness, while the microwave-assisted NPs form a uniform thin layer across the TEM grid. The strongest agglomeration of the SnO2(C) NPs, observed by DLS, STEM and UV-Vis is explained by the very moderate amount of water present on the surface of the NPs identified by FTIR spectroscopy. High resolution STEM combined with SAED and X-ray diffraction (XRD) patterns confirmed the crystalline character of the NPs. In the nanoparticles from polyol synthesis, chlorine from the remains of metal precursors during reduction was detected by energy dispersive spectroscopy (EDS), contrary to the NPs obtained by the chemical precipitation and microwave-assisted methods. All three syntheses routes lead to small, 2-10 nm SnO2 NPs, which were the result of the low concentration of Cl ions in the solutions.

Acoustoelectric Effect on the Responses of SAW Sensors Coated with Electrospun ZnO Nanostructured Thin Film

PubMed Central

Tasaltin, Cihat; Ebeoglu, Mehmet Ali; Ozturk, Zafer Ziya

2012-01-01

In this study, zinc oxide (ZnO) was a very good candidate for improving the sensitivity of gas sensor technology. The preparation of an electrospun ZnO nanostructured thin film on a 433 MHz Rayleigh wave based Surface Acoustic Wave (SAW) sensor and the investigation of the acoustoelectric effect on the responses of the SAW sensor are reported. We prepared an electrospun ZnO nanostructured thin film on the SAW devices by using an electrospray technique. To investigate the dependency of the sensor response on the structure and the number of the ZnO nanoparticles, SAW sensors were prepared with different coating loads. The coating frequency shifts were adjusted to fall between 100 kHz and 2.4 MHz. The sensor measurements were performed against VOCs such as acetone, trichloroethylene, chloroform, ethanol, n-propanol and methanol vapor. The sensor responses of n-propanol have opposite characteristics to the other VOCs, and we attributed these characteristics to the elastic effect/acoustoelectric effect.

Junction Quality of SnO 2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling

DOE PAGES

Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun; ...

2017-10-13

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on cross-section of SnO 2-based perovskite solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having identical device structure: cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; cells with an intrinsic SnO 2 thin layer on the top of FTO as anmore » effective ESL; and cells with the SnO2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO 2-ESL < SnO 2+SAM; this sequence explains the improvements of fill factor (FF) and open-circuit voltage ( V oc). The improvement of FF from the FTO to SnO 2-ESL cells may result from the reduction in voltage lose at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding a SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. Furthermore, these nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO2-based ESL material quality and the ESL/PS interface.« less

Junction Quality of SnO 2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on cross-section of SnO 2-based perovskite solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having identical device structure: cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; cells with an intrinsic SnO 2 thin layer on the top of FTO as anmore » effective ESL; and cells with the SnO2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO 2-ESL < SnO 2+SAM; this sequence explains the improvements of fill factor (FF) and open-circuit voltage ( V oc). The improvement of FF from the FTO to SnO 2-ESL cells may result from the reduction in voltage lose at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding a SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. Furthermore, these nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO2-based ESL material quality and the ESL/PS interface.« less

Self-catalytic branch growth of SnO 2 nanowire junctions

NASA Astrophysics Data System (ADS)

Chen, Y. X.; Campbell, L. J.; Zhou, W. L.

2004-10-01

Multiple branched SnO2 nanowire junctions have been synthesized by thermal evaporation of SnO powder. Their nanostructures were studied by transmission electron microscopy and field emission scanning electron microcopy. It was observed that Sn nanoparticles generated from decomposition of the SnO powder acted as self-catalysts to control the SnO2 nanojunction growth. Orthorhombic SnO2 was found as a dominate phase in nanojunction growth instead of rutile structure. The branches and stems of nanojunctions were found to be an epitaxial growth by electron diffraction analysis and high-resolution electron microscopy observation. The growth directions of the branched SnO2 nanojunctions were along the orthorhombic [1 1 0] and [ 1 1 bar 0 ] . A self-catalytic vapor-liquid-solid growth mechanism is proposed to describe the growth process of the branched SnO2 nanowire junctions.

Synthesis, Optical and Photoluminescence Properties of Cu-Doped Zno Nano-Fibers Thin Films: Nonlinear Optics

NASA Astrophysics Data System (ADS)

Ganesh, V.; Salem, G. F.; Yahia, I. S.; Yakuphanoglu, F.

2018-03-01

Different concentrations of copper-doped zinc oxide thin films were coated on a glass substrate by sol-gel/spin-coating technique. The structural properties of pure and Cu-doped ZnO films were characterized by different techniques, i.e., atomic force microscopy (AFM), photoluminescence and UV-Vis-NIR spectroscopy. The AFM study revealed that pure and doped ZnO films are formed as nano-fibers with a granular structure. The photoluminescence spectra of these films showed a strong ultraviolet emission peak centered at 392 nm and a strong blue emission peak cantered at 450 nm. The optical band gap of the pure and copper-doped ZnO thin films calculated from optical transmission spectra (3.29-3.23 eV) were found to be increasing with increasing copper doping concentration. The refractive index dispersion curve of pure and Cu-doped ZnO film obeyed the single-oscillator model. The optical dispersion parameters such as E o , E d , and n_{∞}2 were calculated. Further, the nonlinear refractive index and nonlinear optical susceptibility were also calculated and interpreted.

Synthesis of Stable Interfaces on SnO2 Surfaces for Charge-Transfer Applications

NASA Astrophysics Data System (ADS)

Benson, Michelle C.

The commercial market for solar harvesting devices as an alternative energy source requires them to be both low-cost and efficient to replace or reduce the dependence on fossil fuel burning. Over the last few decades there has been promising efforts towards improving solar devices by using abundant and non-toxic metal oxide nanomaterials. One particular metal oxide of interest has been SnO2 due to its high electron mobility, wide-band gap, and aqueous stability. However SnO2 based solar cells have yet to reach efficiency values of other metal oxides, like TiO2. The advancement of SnO2 based devices is dependent on many factors, including improved methods of surface functionalization that can yield stable interfaces. This work explores the use of a versatile functionalization method through the use of the Cu(I)-catalyzed azide-alkyne cycloaddition (CuAAC) reaction. The CuAAC reaction is capable of producing electrochemically, photochemically, and electrocatalytically active surfaces on a variety of SnO2 materials. The resulting charge-transfer characteristics were investigated as well as an emphasis on understanding the stability of the resulting molecular linkage. We determined the CuAAC reaction is able to proceed through both azide-modified and alkyne-modified surfaces. The resulting charge-transfer properties showed that the molecular tether was capable of supporting charge separation at the interface. We also investigated the enhancement of electron injection upon the introduction of an ultra-thin ZrO2 coating on SnO2. Several complexes were used to fully understand the charge-transfer capabilities, including model systems of ferrocene and a ruthenium coordination complex, a ruthenium mononuclear water oxidation catalyst, and a commercial ruthenium based dye.

Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT.

PubMed

Khafe, Adie Bin Mohd; Watanabe, Hiraku; Yamauchi, Hiroshi; Kuniyoshi, Shigekazu; Iizuka, Masaaki; Sakai, Masatoshi; Kudo, Kazuhiro

2016-04-01

The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of ZnO was conducted in term of their crystallinity, the increase composition of ZnO formed inside the thin film and the decrease of the carbon impurities originated from aqueous solution of the ZnO itself. The X-ray diffraction (XRD) evaluation showed UV/03 assisted thermal treatment has no obvious effect towards crystallinity of ZnO in the range of low process temperature. Moreover, through X-ray photoelectron spectroscopy (XPS) evaluation and Fourier transform infrared (FT-IR) spectroscopy evaluation, more carbon impurities disappeared from the ZnO thin film and the increase of composition amount of ZnO, when the thin film was subjected to UV/O3 assisted thermal treatment. Therefore, UV/O3 assisted thermal treatment contributed in carbon impurities elimination and accelerate ZnO formation in ZnO thin film, which led to the improvement in the electrical property of ZnO-FET in the low-process temperature.

Thermal-induced structural and optical investigations of Agsbnd ZnO nanocomposite thin films

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.

2018-07-01

In the present paper, we have successfully synthesized Agsbnd ZnO nanocomposite thin films by RF-magnetron sputtering technique at room temperature. Systematic investigations of thermal-induced structural and optical modifications in Agsbnd ZnO thin films have been observed and described. The Agsbnd ZnO thin films were annealed at three different temperatures of 300 °C, 400 °C and 500 °C in vacuum to prevent the oxidation of Ag. The presence and formation of Ag nanoparticles were estimated by transmission electron microscopy. X-ray diffraction analysis revealed the structural information about the crystalline quality of ZnO. The crystallinity as well as the crystallite size of the films have been found to be improved with annealing temperatures. The estimated crystallite size was ∼15.8 nm for as-deposited film and 19.0 nm for the film at a higher temperature. The chemical composition and structural analysis of as-deposited film were carried out by X-ray photoelectron spectroscopy. A very sharp absorption band appeared at ∼540 nm for Ag NPs that is associated with the surface plasmon resonance band of Ag. A noticeable red shift of about ∼12 nm has been recorded for films annealed at 500 °C. Atomic force microscopy has been utilized to examine the surface morphology of the as-deposited and annealed films. The grain size was found to be increase with increasing annealing temperature, while no significant changes were observed in the roughness of Agsbnd ZnO thin films. Raman spectroscopy revealed lattice defects and disordering in the films after the thermal annealing.

Effect of different sound atmospheres on SnO2:Sb thin films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Kocyigit, Adem; Ozturk, Erhan; Ejderha, Kadir; Turgut, Guven

2017-11-01

Different sound atmosphere effects were investigated on SnO2:Sb thin films, which were deposited with dip coating technique. Two sound atmospheres were used in this study; one of them was nay sound atmosphere for soft sound, another was metallic sound for hard sound. X-ray diffraction (XRD) graphs have indicated that the films have different orientations and structural parameters in quiet room, metallic and soft sound atmospheres. It could be seen from UV-Vis spectrometer measurements that films have different band gaps and optical transmittances with changing sound atmospheres. Scanning electron microscope (SEM) and AFM images of the films have been pointed out that surfaces of films have been affected with changing sound atmospheres. The electrical measurements have shown that films have different I-V plots and different sheet resistances with changing sound atmospheres. These sound effects may be used to manage atoms in nano dimensions.

Contrastive Study on the Structure and the Ultraviolet Absorption Property of Multiple-Doped and Element-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Xu, Yunyun; Zhang, Tao; Lin, Zhenrong; Tian, Yanfeng; Zhou, Shandan

Sb2O3- and CeO2-doped ZnO thin films were prepared by RF magnetron sputtering technique. The influence of Sb2O3 and CeO2 on the structure and ultraviolet (UV) absorption properties was studied by X-ray diffraction and UV-Vis spectrophotometry. Results show that multiple doping of films had a prominent effect on the development of crystal grains and the UV absorption property. Ce and Sb exist in many forms in the ZnO film. The multiple-doped films also show enhanced UVA absorption, and the UV absorption peak widens and the absorption intensity increases. Sb plays a dominant role on the structure and UV absorption of ZnO thin films, which are enhanced by Ce.

CO2 Sensors Based on Nanocrystalline SnO2 Doped with CuO

NASA Technical Reports Server (NTRS)

Xu, Jennifer C.; Hunter, Gary W.; Liu, Chung Chiun; Ward, Benjamin J.

2008-01-01

Nanocrystalline tin oxide (SnO2) doped with copper oxide (CuO) has been found to be useful as an electrical-resistance sensory material for measuring the concentration of carbon dioxide in air. SnO2 is an n-type semiconductor that has been widely used as a sensing material for detecting such reducing gases as carbon monoxide, some of the nitrogen oxides, and hydrocarbons. Without doping, SnO2 usually does not respond to carbon dioxide and other stable gases. The discovery that the electrical resistance of CuO-doped SnO2 varies significantly with the concentration of CO2 creates opportunities for the development of relatively inexpensive CO2 sensors for detecting fires and monitoring atmospheric conditions. This discovery could also lead to research that could alter fundamental knowledge of SnO2 as a sensing material, perhaps leading to the development of SnO2-based sensing materials for measuring concentrations of oxidizing gases. Prototype CO2 sensors based on CuO-doped SnO2 have been fabricated by means of semiconductor-microfabrication and sol-gel nanomaterial-synthesis batch processes that are amendable to inexpensive implementation in mass production.

Franz-Keldysh effect in epitaxial ZnO thin films

NASA Astrophysics Data System (ADS)

Bridoux, G.; Villafuerte, M.; Ferreyra, J. M.; Guimpel, J.; Nieva, G.; Figueroa, C. A.; Straube, B.; Heluani, S. P.

2018-02-01

Photoconductance spectroscopy has been studied in epitaxial ZnO thin films with different thicknesses that range between 136 and 21 nm. We report a systematic decrease in photoconductivity and a red shift in band edge photoconductance spectra when the thickness is reduced. For thinner films, it is found that the effective energy gap value diminishes. By time dependent photoconductivity measurements, we found an enhanced contribution of the slow relaxation times for thicker films. These effects are interpreted in terms of a band-bending contribution where the Franz-Keldysh effect and the polarization of ZnO play a major role in thinner films.

Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kumar, A. Guru Sampath; Obulapathi, L.; Sarmash, T. Sofi; Rani, D. Jhansi; Maddaiah, M.; Rao, T. Subba; Asokan, K.

2015-04-01

Thin films of cadmium (Cd) (0 wt.%, 2 wt.%, 4 wt.% and 10 wt.%) doped zinc oxide (ZnO) have been deposited on a glass substrate by reactive DC magnetron sputtering. The synthesized films are characterized by glancing angle x-ray diffraction (GAXRD), UV-Vis-NIR spectroscopy, four probe resistivity measurement, Hall measurement system, field emission-scanning electron microscopy and energy dispersive analysis by x-rays. A systematic study has been made on the structure, electrical and optical properties of Cd doped ZnO thin films as a function of Cd concentration (0 wt.%, 2 wt.%, 4 wt.% and 10 wt.%). All these films have a hexagonal wurtzite ZnO structure with (0 0 2) orientation without any Cd related phase from the GAXRD patterns. The grain size was increased and maximum appears at 4 wt.% Cd concentration. The electrical resistivity of the films decreased with the Cd doping and minimum resistivity was observed at 4 wt.% Cd concentration. UV-Vis-NIR studies showed that the optical band gap of ZnO (3.37 eV) was reduced to 3.10 eV which is at 4 wt.% Cd concentration.

Studying Structural, Optical, Electrical, and Sensing Properties of Nanocrystalline SnO2:Cu Films Prepared by Sol-Gel Method for CO Gas Sensor Application at Low Temperature

NASA Astrophysics Data System (ADS)

Al-Jawad, Selma M. H.; Elttayf, Abdulhussain K.; Saber, Amel S.

Nanocrystalline SnO2 and SnO2:Cu thin films derived from SnCl2ṡ2H2O precursors have been prepared on glass substrates using sol-gel dip-coating technique. The deposited film was 300±20nm thick and the films were annealed in air at 500∘C for 1h. Structural, optical and sensing properties of the films were studied under different preparation conditions, such as Cu-doping concentration of 2%, 4% and 6wt.%. X-ray diffraction studies show the polycrystalline nature with tetragonal rutile structure of SnO2 and Cu:SnO2 thin films. The films have highly preferred orientation along (110). The crystallite size of the prepared samples reduced with increasing Cu-doping concentrations and the addition of Cu as dopants changed the structural properties of the thin films. Surface morphology was determined through scanning electron microscopy and atomic force microscopy. Results show that the particle size decreased as doping concentration increased. The films have moderate optical transmission (up to 82.4% at 800nm), and the transmittance, absorption coefficient and energy gap at different Cu-doping concentration were measured and calculated. Results show that Cu-doping decreased the transmittance and energy gap whereas it increased the absorption coefficient. Two peaks were noted with Cu-doping concentration of 0-6wt.%; the first peak was positioned exactly at 320nm ultraviolet emission and the second was positioned at 430-480nm. Moreover, emission bands were noticed in the photoluminescence spectra of Cu:SnO2. The electrical properties of SnO2 films include DC electrical conductivity, showing that the films have two activation energies, namely, Ea1 and Ea2, which increase as Cu-doping concentration increases. Cudoped nanocrystalline SnO2 gas-sensing material has better sensitivity to CO gas compared with pure SnO2.

Temperature dependent optical properties of ZnO thin film using ellipsometry and photoluminescence

NASA Astrophysics Data System (ADS)

Bouzourâa, M.-B.; Battie, Y.; Dalmasso, S.; Zaïbi, M.-A.; Oueslati, M.; En Naciri, A.

2018-05-01

We report the temperature dependence of the dielectric function, the exciton binding energy and the electronic transitions of crystallized ZnO thin film using spectroscopic ellipsometry (SE) and photoluminescence (PL). ZnO layers were prepared by sol-gel method and deposited on crystalline silicon (Si) by spin coating technique. The ZnO optical properties were determined between 300 K and 620 K. Rigorous study of optical responses was achieved in order to demonstrate the quenching exciton of ZnO as a function of temperature. Numerical technique named constrained cubic splines approximation (CCS), Tauc-Lorentz (TL) and Tanguy dispersion models were selected for the ellipsometry data modeling in order to obtain the dielectric function of ZnO. The results reveals that the exciton bound becomes widely flattening at 470 K on the one hand, and on the other that the Tanguy dispersion law is more appropriate for determining the optical responses of ZnO thin film in the temperature range of 300 K-420 K. The Tauc-Lorentz, for its part, reproduces correctly the ZnO dielectric function in 470 K-620 K temperature range. The temperature dependence of the electronic transition given by SE and PL shows that the exciton quenching was observed in 420 K-∼520 K temperature range. This quenching effect can be explained by the equilibrium between the Coulomb force of exciton and its kinetic energy in the film. The kinetic energy was found to induce three degrees of freedom of the exciton.

Investigation of Hydrogen-Like Muonium States in Nb-Doped SnO2 Films

NASA Astrophysics Data System (ADS)

Rabis, Annett; Prokscha, Thomas; Fabbri, Emiliana; Salman, Zaher; Schmidt, Thomas; Suter, Andreas

Little is known about the characteristics of hydrogen states in thin films of SnO2 and Nb doped SnO2 (NTO) and its influence on the electrical properties in these materials, which are promising candidates for metal-oxide supports in polymer electrolyte fuel cells. Here, we used low-energy muon spin rotation/relaxation (LE-μSR) to study hydrogen-like muonium (Mu) states between 5 and 300 K in undoped and Nb doped SnO2 films with Nb doping levels of 0.1 and 2%, respectively. The films were prepared by reactive DC magnetron sputtering on undoped Si substrates. Film thicknesses varied between 75 and 200 nm, and muons were implanted close to the surface at a mean depth of 10 nm, in the center of the films, and in some cases close to the NTO/Si interface. Our results of transverse-field and longitudinal-field μSR show striking similarities to recent bulk μSR measurements on various zirconia systems [Vieira et al., Phys. Rev. B 94, 115207 (2016)]. This suggests that in the NTO systems the same Mu configurations exist which are the interstitial site with a deep, isotropic atomic Mu state, and, as the dominant fraction, the oxygen bound configuration with polaronic character.

Ultrathin SnO2 nanorods: template- and surfactant-free solution phase synthesis, growth mechanism, optical, gas-sensing, and surface adsorption properties.

PubMed

Xi, Guangcheng; Ye, Jinhua

2010-03-01

A novel template- and surfactant-free low temperature solution-phase method has been successfully developed for the controlled synthesis of ultrathin SnO(2) single-crystalline nanorods for the first time. The ultrathin SnO(2) single-crystalline nanorods are 2.0 +/- 0.5 nm in diameter, which is smaller than its exciton Bohr radius. The ultrathin SnO(2) nanorods show a high specific area (191.5 m(2) g(-1)). Such a thin SnO(2) single-crystalline nanorod is new in the family of SnO(2) nanostrucures and presents a strong quantum confinement effect. Its formation depends on the reaction temperature as well as on the concentration of the urea solution. A nonclassical crystallization process, Ostwald ripening process followed by an oriented attachment mechanism, is proposed based on the detailed observations from a time-dependent crystal evolution process. Importantly, such structured SnO(2) has shown a strong structure-induced enhancement of gas-sensing properties and has exhibited greatly enhanced gas-sensing property for the detection of ethanol than that of other structured SnO(2), such as the powders of nanobelts and microrods. Moreover, these ultrathin SnO(2) nanorods exhibit excellent ability to remove organic pollutant in wastewater by enormous surface adsorption. These properties are mainly attributed to its higher surface-to-volume ratio and ultrathin diameter. This work provides a novel low temperature, green, and inexpensive pathway to the synthesis of ultrathin nanorods, offering a new material form for sensors, solar cells, catalysts, water treatments, and other applications.

Effect of Various Catalysts on the Stability of Characteristics of Acetone Sensors Based on Thin Nanocrystalline SnO2 Films

NASA Astrophysics Data System (ADS)

Sevastyanov, E. Yu.; Maksimova, N. K.; Potekaev, A. I.; Khludkova, L. S.; Chernikov, E. V.; Davydova, T. A.

2018-02-01

The results of studies of electrical and gas sensitive characteristics of acetone sensors based on thin nanocrystalline SnO2 films with various catalysts deposited on the surface (Pt/Pd, Au) and introduced into the volume (Au, Ni, Co) are presented. Films containing impurities of gold and 3d-metals were obtained by the method of magnetron sputtering of mosaic targets. Particular attention was paid to the influence of the longterm tests and humidity level on the properties of sensors. It is shown that the sensors with the deposited dispersed gold layers with Au+Ni and, especially, Au+Co additives introduced into the volume are characterized by the increased stability in the process of testing under prolonged exposure to acetone and also under conditions of varying humidity.

Nanocrystalline SnO2 formation using energetic ion beam.

PubMed

Mohanty, T; Batra, Y; Tripathi, A; Kanjilal, D

2007-06-01

Nanocrystalline tin oxide (SnO2) thin films grown by RF magnetron sputtering technique were characterized by UV-Visible absorption spectroscopy and Photoluminescence spectroscopy. From atomic force microscopic (AFM) and Glancing angle X-ray diffraction (GAXRD) measurements, the radius of grains was found to be approximately 6+/-2 nm. The thin films were bombarded with 250 keV Xe2+ ion beam to observe the stability of nanophases against radiation. For ion bombarded films, optical absorption band edge is shifted towards red region. Atomic force microscopy studies show that the radius of the grains was increased to approximately 8 +/- 1 nm and the grains were nearly uniform in size. The size of the grains has been reduced after ion bombardment in the case of films grown on Si. During this process, defects such as vacancies, voids were generated in the films as well as in the substrates. Ion bombardment induces local temperature increase of thin films causing melting of films. Ion beam induced defects enhances the diffusion of atoms leading to uniformity in size of grains. The role of matrix on ion beam induced grain growth is discussed.

Heterogeneous nanocrystals assembled TiO2/SnO2/C composite for improved lithium storage

NASA Astrophysics Data System (ADS)

Tian, Qinghua; Mao, Yuning; Zhang, Xuzhen; Yang, Li

2018-07-01

Using stable TiO2 and flexible carbon as double-functional structure protector of nanostructural SnO2 to fabricate TiO2/SnO2/C composites is widely considered as a favorable strategy for improving the lithium storage performance of SnO2 anodes. But, it is still a challenge to obtain a satisfying TiO2/SnO2/C composite. Herein, an interesting porous nanostructure of TiO2/SnO2/C nanosphere composite assembled by TiO2 and SnO2 nanocrystals with an outer carbon coating has been fabricated by a well-designed approach. Thanks to the perfectly combined action of porous spherical nanostructure, TiO2 and SnO2 nanocrystals and carbon coating, the as-prepared composite obtains excellent structure stability and improved electrochemcial properties. When used as a promising anode for lithium-ion batteres, it exhibits outstanding lithium storage performance, delivering a high capacity of 687.2 mAh g-1 after even 400 cycles.

Enhancement of visible light photocatalytic activity over bistructural SnO2 nanobelts

NASA Astrophysics Data System (ADS)

Wang, Lihua; Wang, Yongli; Su, Dezhi; Zhao, Yongjie

2018-02-01

SnO2 nanobelts were synthesized by hydrothermal method. The structure and morphology were investigated by XRD, Raman spectra, SEM and TEM. The results revealed that the synthesized SnO2 nanobelts were covered with amorphous surface. For the photocatalytic efficiency of methylene blue, the none-fully crystallized SnO2 nanobelts were over four times higher than bulk SnO2. Moreover, the photo-degradation rate constant with SnO2 nanobelts as photocatalysts was over six times higher than bulk SnO2. It was considered that the subtle structure of SnO2 nanobelts not only lowered the band gap but also improved the transfer of charge carriers and trapping effect of solar light. Furthermore, this strategy of enhancing photocatalytic performance could be extended to the other kinds of metal oxide photocatalyst.

Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

NASA Astrophysics Data System (ADS)

Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

2018-04-01

Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

Metallic Sn spheres and SnO2@C core-shells by anaerobic and aerobic catalytic ethanol and CO oxidation reactions over SnO2 nanoparticles

PubMed Central

Kim, Won Joo; Lee, Sung Woo; Sohn, Youngku

2015-01-01

SnO2 has been studied intensely for applications to sensors, Li-ion batteries and solar cells. Despite this, comparatively little attention has been paid to the changes in morphology and crystal phase that occur on the metal oxide surface during chemical reactions. This paper reports anaerobic and aerobic ethanol and CO oxidation reactions over SnO2 nanoparticles (NPs), as well as the subsequent changes in the nature of the NPs. Uniform SnO2@C core-shells (10 nm) were formed by an aerobic ethanol oxidation reaction over SnO2 NPs. On the other hand, metallic Sn spheres were produced by an anaerobic ethanol oxidation reaction at 450 °C, which is significantly lower than that (1200 °C) used in industrial Sn production. Anaerobic and aerobic CO oxidation reactions were also examined. The novelty of the methods for the production of metallic Sn and SnO2@C core-shells including other anaerobic and aerobic reactions will contribute significantly to Sn and SnO2-based applications. PMID:26300041

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

PubMed

Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

2014-11-01

Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

NASA Astrophysics Data System (ADS)

Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

2009-08-01

Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties

PubMed Central

Yong, Zhihua; Liu, Tao; Uruga, Tomoya; Tanida, Hajime; Qi, Dongchen; Rusydi, Andrivo; Wee, Andrew T. S.

2010-01-01

We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS) spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O2 shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O2 shows the largest saturation magnetic moment of 0.827 ± 0.013 µB/Ti.

Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

NASA Astrophysics Data System (ADS)

Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

2018-05-01

In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

NASA Astrophysics Data System (ADS)

Radha, R.; Sakthivelu, A.; Pradhabhan, D.

2016-08-01

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

Al decorated ZnO thin-film photoanode for SPR-enhanced photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Li, Hongxia; Li, Xin; Dong, Wei; Xi, Junhua; Wu, Xin

2018-06-01

Photoelectrochemical (PEC) water splitting has been considered to be a promising approach to ease the energy and environmental crisis. Herein, Al decorated ZnO thin films are successfully achieved through a facile dc magnetron-sputtering method followed with Al evaporation for further enhanced PEC performance. The Al/ZnO thin film with 60 s Al evaporating time exhibits the highest photocurrent density under AM1.5G and visible light irradiation, which are more than 5 and 3 times as the pure ZnO film, respectively. Such surface modification by Al not only enlarges the visible light absorption based on surface plasmonic resonance effect, but facilitates the charge separation and transportation at the electrode/electrolyte interface. Finally, a possible mechanism is proposed for the photocatalytic activity enhancement of Al/ZnO thin film photoanode.

Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.

PubMed

Tierno, Davide; Dekkers, Matthijn; Wittendorp, Paul; Sun, Xiao; Bayer, Samuel C; King, Seth T; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana P; Adelmann, Christoph

2018-05-01

The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

Characterization of SnO2/Ni/SiO2-MCP anode in three-dimensional lithium-ion battery

NASA Astrophysics Data System (ADS)

Lou, Xuefeng; Xu, Shaohui; Zhu, Yiping; Wang, Lianwei; Chu, Paul K.

2013-12-01

By combining a SnO2 thin film with silicon dioxide microchannel plate (SiO2-MCP), a three-dimensional (3D) structure with enough space to accommodate the volume change of SnO2 during charging-discharging is produced by MEMS and electroless deposition. Owing to the special structure of the MCP, the battery is able to deliver a reversible Li storage capacity of 408 mAhg-1 after 100 cycles. If the current density is reduced to 200 mAg-1 at a constant current during charging and discharging, the battery exhibits reversible capacities of 1575 and 996 mAhg-1 in the first discharging and charging cycle, respectively. However, a reversible Li-storage capacity of only 298 mAhg-1 is obtained after 50 cycles of deep charging at a current of 200 mAg-1. It is found that silicon is involved in the charging-discharging process at a low current.

Fabrication and electrical properties of low temperature-processed thin-film-transistors with chemical-bath deposited ZnO layer.

PubMed

Ahn, Joo-Seob; Kwon, Ji-Hye; Yang, Heesun

2013-06-01

ZnO film was grown on ZnO quantum dot seed layer-coated substrate by a low-temperature chemical bath deposition, where sodium citrate serves as a complexing agent for Zn2+ ion. The ZnO film deposited under the optimal condition exhibited a highly uniform surface morphology with a thickness of approimately 30 nm. For the fabrication of thin-film-transistor with a bottom-gate structure, ZnO film was chemically deposited on the transparent substrate of a seed layer-coated SiN(x)/ITO (indium tin oxide)/glass. As-deposited ZnO channel was baked at low temperatures of 60-200 degrees C to investigate the effect of baking temperature on electrical performances. Compared to the device with 60 degrees C-baked ZnO channel, the TFT performances of one with 200 degrees C-baked channel were substantially improved, exhibiting an on-off current ratio of 3.6 x 10(6) and a saturated field-effect mobility of 0.27 cm2/V x s.

Effect of concentration and irradiation on the optical and structural properties of ZnO thin films deposited by spray pyrolysis techniques

NASA Astrophysics Data System (ADS)

Adeoye Victor, Babalola

2017-12-01

This study involves the preparation of ZnO thin films by spray pyrolysis and to investigate the effect of concentration of the film and irradiation on ZnO thin film deposited by spray pyrolysis method deposited at 350 ± 5 °C. The precursor for zinc oxide was produced from zinc acetate (Zn(CH3COO))2. The samples were annealed at 500 °C for 6 h and irradiated using 137Cs 90.998 mCi radiation. They were then characterised using ultra violet-visible spectrophotometry, X-ray Diffractometry (XRD) with Cu-Kα radiation to determine the structure of the film, Four-point probe for electrical properties and Rutherford Backscattering Spectrometry (RBS) were used for the composition of the film. XRD diffraction peaks observed for 0.05 M ZnO were (1 0 0), (0 0 2), (1 0 1) and (1 1 0) planes for the annealed and irradiated annealed ZnO films with no preferential orientation. The as-deposited films have low peaks belonging to (1 0 0), (0 0 2), (1 0 1), (1 1 0) plane and other peaks such as (1 1 2), (2 0 0) and (2 0 1). The results are explained with regard to the irradiation damage introduced to the samples. The as-deposited, annealed and irradiated-annealed films are highly transparent in the visible range of the electromagnetic spectrum with an average percent transmittance values of 85% and present a sharp ultraviolet cut-off at approximately 380 nm for the ZnO thin film.

Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film.

PubMed

Tetsuyama, Norihiro; Fusazaki, Koshi; Mizokami, Yasuaki; Shimogaki, Tetsuya; Higashihata, Mitsuhiro; Nakamura, Daisuke; Okada, Tatsuo

2014-04-21

We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.

Effect of Mg doping in the gas-sensing performance of RF-sputtered ZnO thin films

NASA Astrophysics Data System (ADS)

Vinoth, E.; Gowrishankar, S.; Gopalakrishnan, N.

2018-06-01

Thin films of Mg-free and Mg-doped (3, 10 and 20 mol%) ZnO thin films have been deposited on Si (100) substrates by RF magnetron sputtering for gas-sensing application. Preferential orientation along (002) plane with hexagonal wurtzite structure has been observed in X-ray diffraction analysis. The conductivity, resistivity, and mobility of the deposited films have been measured by Hall effect measurement. The bandgap of the films has been calculated from the UV-Vis-NIR spectroscopy. It has been found that the bandgap was increased from 3.35 to 3.91 eV with Mg content in ZnO due to the radiative recombination of excitons. The change in morphology of the grown films has been investigated by scanning electron microscope. Gas-sensing measurements have been conducted for fabricated films. The sensor response, selectivity, and stability measurement were done for the fabricated films. Though better response was found towards ethanol, methanol, and ammonia for MZ2 (Mg at 10 mol%) film and maximum gas response was observed towards ammonia. The selectivity measurement reveals maximum sensitivity about 42% for ammonia. The low response time of 123 s and recovery time of 152 s towards ammonia were observed for MZ2 (Mg at 10 mol%). Stability of the Mg-doped ZnO thin film confirmed by the continuous sensing measurements for 4 months.

Porous SnO2-CuO nanotubes for highly reversible lithium storage

NASA Astrophysics Data System (ADS)

Cheong, Jun Young; Kim, Chanhoon; Jung, Ji-Won; Yoon, Ki Ro; Kim, Il-Doo

2018-01-01

Facile synthesis of rationally designed structures is critical to realize a high performance electrode for lithium-ion batteries (LIBs). Among different candidates, tin(IV) oxide (SnO2) is one of the most actively researched electrode materials due to its high theoretical capacity (1493 mAh g-1), abundance, inexpensive costs, and environmental friendliness. However, severe capacity decay from the volume expansion and low conductivity of SnO2 have hampered its use as a feasible electrode for LIBs. Rationally designed SnO2-based nanostructures with conductive materials can be an ideal solution to resolve such limitations. In this work, we have successfully fabricated porous SnO2-CuO composite nanotubes (SnO2-CuO p-NTs) by electrospinning and subsequent calcination step. The porous nanotubular structure is expected to mitigate the volume expansion of SnO2, while the as-formed Cu from CuO upon lithiation allows faster electron transport by improving the low conductivity of SnO2. With a synergistic effect of both Sn and Cu-based oxides, SnO2-CuO p-NTs deliver stable cycling performance (91.3% of capacity retention, ∼538 mAh g-1) even after 350 cycles at a current density of 500 mA g-1, along with enhanced rate capabilities compared with SnO2.

Role of low O 2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

NASA Astrophysics Data System (ADS)

Pandis, Ch.; Brilis, N.; Tsamakis, D.; Ali, H. A.; Krishnamoorthy, S.; Iliadis, A. A.

2006-06-01

Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O 2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O 2 partial pressure is reduced from 10 -4 to 10 -7 Torr at growth temperatures lower than 400 °C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O 2 pressures.

Thermoelectric Properties of Self Assembled TiO2/SnO2 Nanocomposites

NASA Technical Reports Server (NTRS)

Dynys, Fred; Sayir, Ali; Sehirlioglu, Alp

2008-01-01

Recent advances in improving efficiency of thermoelectric materials are linked to nanotechnology. Thermodynamically driven spinodal decomposition was utilized to synthesize bulk nanocomposites. TiO2/SnO2 system exhibits a large spinodal region, ranging from 15 to 85 mole % TiO2. The phase separated microstructures are stable up to 1400 C. Semiconducting TiO2/SnO2 powders were synthesized by solid state reaction between TiO2 and SnO2. High density samples were fabricated by pressureless sintering. Self assemble nanocomposites were achieved by annealing at 1000 to 1350 C. X-ray diffraction reveal phase separation of (Ti(x)Sn(1-x))O2 type phases. The TiO2/SnO2 nanocomposites exhibit n-type behavior; a power factor of 70 W/mK2 at 1000 C has been achieved with penta-valent doping. Seebeck, thermal conductivity, electrical resistivity and microstructure will be discussed in relation to composition and doping.

Thermoelectric Properties of Self Assemble TiO2/SnO2 Nanocomposites

NASA Technical Reports Server (NTRS)

Dynys, Fred; Sayir, Ali; Sehirlioglu, Alp

2008-01-01

Recent advances in improving efficiency of thermoelectric materials are linked to nanotechnology. Thermodynamically driven spinodal decomposition was utilized to synthesize bulk nanocomposites. TiO2/SnO2 system exhibits a large spinodal region, ranging from 15 to 85 mole % TiO2. The phase separated microstructures are stable up to 1400 C. Semiconducting TiO2/SnO2 powders were synthesized by solid state reaction between TiO2 and SnO2. High density samples were fabricated by pressureless sintering. Self assemble nanocomposites were achieved by annealing at 1000 to 1350 C. X-ray diffraction reveal phase separation of (Ti(x)Sn(1-x))O2 type phases. The TiO2/SnO2 nanocomposites exhibit n-type behavior; a power factor of 70 (mu)W/m sq K at 1000 C has been achieved with penta-valent doping. Seebeck, thermal conductivity, electrical resistivity and microstructure will be discussed in relation to composition and doping.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

NASA Astrophysics Data System (ADS)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors.

PubMed

Jang, Kwang-Suk; Wee, Duyoung; Kim, Yun Ho; Kim, Jinsoo; Ahn, Taek; Ka, Jae-Won; Yi, Mi Hye

2013-06-11

We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V·s and 2.12 × 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.

The Effect of Thickness of ZnO Thin Films on Hydrophobic Self-Cleaning Properties

NASA Astrophysics Data System (ADS)

Mufti, N.; Arista, D.; Diantoro, M.; Fuad, A.; Taufiq, A.; Sunaryono

2017-05-01

Glass coating can be conducted by using ZnO-photocatalyst based semiconductor material since it is preeminent in decomposing organics compound and dangerous bacteria which often contaminates the environment. If there are dirt containing organics compound on the glass, the ZnO photocatalyst coat can be applied as self-cleaning, usually called self-cleaning glass. It depends on the coating thickness which can be controlled by setting the speed of spin coating. In this research, the various rotating speeds of spin coating were conducted at 2000 rpm, 3000 rpm, and 4000 rpm to control the thickness. The raw materials used in this research were Zn(CH3COOH)2.2H2O (PA 99,5%), Ethylene glycol, Diethanolamine (PA 99%), Isopropanol Alkohol, Glycerol, and Ashton. Synthesis methods used were sol-gel prior to spin coating technic were applied. The results of the film were characterized by using SEM, XRD, and UV-Spectrophotometer. The crystal structure was analyzed by using Highscore plus and GSAS software, the size crystal was calculated by using Scherrer equation, a contact angle with ImageJ software. It was shown that ZnO thin film had been successfully synthesized with the crystal size around 21 nm up to 26 nm. The absorption value is higher due to the increasing of coat thickness with bandgap ± 3.2 eV. The test result of hydrophobic and hydrophilic characteristics show that all samples of ZnO thin film with the thickness ± 1.050 μm, ± 0.450 μm, ± 0.250 μm can be applied as self-cleaning glass. The best result was gained with the thickness of thin film ± 1.050 μm.

High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays

DTIC Science & Technology

2011-08-19

zinc oxide ( ZnO ) thin film as an active channel layer in TFT has become of great interest owing to their specific...630-0192 Japan Phone: +81-743-72-6060 Fax: +81-743-72-6069 E-mail: uraoka@ms.naist.jp Keywords: zinc oxide , thin film transistors , atomic layer...deposition Symposium topic: Transparent Semiconductors Oxides [Abstract] In this study, we fabricated TFTs using ZnO thin film as the

Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

PubMed

Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

2014-04-14

ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic Layer Deposition of Electron Selective SnOx and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance.

PubMed

Hultqvist, Adam; Aitola, Kerttu; Sveinbjörnsson, Kári; Saki, Zahra; Larsson, Fredrik; Törndahl, Tobias; Johansson, Erik; Boschloo, Gerrit; Edoff, Marika

2017-09-06

The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH 2 ) 2 , CH 3 NH 3 )Pb(I,Br) 3 (FAPbI 3 :MAPbBr 3 ) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnO x . Exposing the samples to the heat, the vacuum, and even the counter reactant of H 2 O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C 2 H 5 ) 2 either by itself or in combination with H 2 O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI 2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH 3 ) 2 ) 4 does not seem to degrade the bulk of the perovskite film, and conformal SnO x films can successfully be grown on top of it using atomic layer deposition. Using this SnO x film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C 70 -butyric acid methyl ester. However, the devices with SnO x show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnO x films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnO x interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnO x growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.

Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha

2015-06-24

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin filmmore » solar cells.« less

Effect of substrates on structural and optical properties of tin oxide (SnO2) nanostructures.

PubMed

Johari, Anima; Bhatnagar, M C; Rana, Vikas

2012-10-01

We report on controlling the morphology of tin oxide (SnO2) nanostructures and the study of the effect of surface morphology on structural and optical properties of SnO2 nanostuctures. In present work, Tin oxide (SnO2) nanostructures such as nanowires and nanorods have been grown by thermal evaporation of SnO2 powder. To demonstrate the effect of different substrates on the morphology of grown SnO2 nanostructures, the thermal evaporation of SnO2 powder was carried out on Si and gold catalyzed Si (Au/Si) substrates. The scanning-electron-microscopic analysis shows the growth of SnO2 nanowires on Au/Si substrate and growth of SnO2 nanorods on Si substrate. The scanning-and transmission-electron-microscopic analysis shows that the diameter of SnO2 nanowires and nanorods are about 70 nm and 95 nm respectively and their length is about 80 microm and 30 microm respectively. The vapor-liquid-solid (VLS) growth of SnO2 nanowires and vapor-solid (VS) growth of SnO2 nanorods is also confirmed with the help of TEM and EDX spectra. The synthesized SnO2 nanowires show tetragonal rutile structure of SnO2, whereas SnO2 nanorods show tetragonal rutile as well as cassiterite structure of SnO2. UV-Vis absorption spectra showed the optical band gaps of 4.1 eV and 3.8 eV for the SnO2 nanowires and the nanorods, respectively. The SnO2 nanowires and nanorods show photoluminescence with broad emission peaks centred at around 600 nm and 580 nm respectively. Raman spectra of SnO2 nanowires shows three Raman shifts (478, 632, 773 cm(-1)) corresponding to Eg, A1g and B2g vibration modes, whereas in Raman spectra of SnO2 nanorods, A1g peak is dramatically reduced and the B2g mode is totally quenched.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

SnO 2 nanowires decorated with forsythia-like TiO 2 for photoenergy conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Ik Jae; Park, Sangbaek; Kim, Dong Hoe

Here, we report forsythia-like TiO 2-decorated SnO 2 nanowires on fluorine-doped SnO 2 electrode as a photoelectrode of dye-sensitized solar cells. When SnO 2 nanowires grown via vapor-liquid-solid reaction were soaked in TiCl 4 solution, leaf-shaped rutile TiO 2 was grown onto the surface of the nanowires. The TiO 2 decoration increases the short circuit current (J sc), open circuit voltage (V oc) and fill factor (FF) of dye-sensitized solar cells. Further, electron lifetime increased by employing an atomic-layer-deposited TiO 2 nanoshell between the TiO 2 leaves and the SnO 2 nanowire, due to preventing charge recombination at the nanowire/electrolytemore » interface.« less

SnO 2 nanowires decorated with forsythia-like TiO 2 for photoenergy conversion

DOE PAGES

Park, Ik Jae; Park, Sangbaek; Kim, Dong Hoe; ...

2017-05-17

Here, we report forsythia-like TiO 2-decorated SnO 2 nanowires on fluorine-doped SnO 2 electrode as a photoelectrode of dye-sensitized solar cells. When SnO 2 nanowires grown via vapor-liquid-solid reaction were soaked in TiCl 4 solution, leaf-shaped rutile TiO 2 was grown onto the surface of the nanowires. The TiO 2 decoration increases the short circuit current (J sc), open circuit voltage (V oc) and fill factor (FF) of dye-sensitized solar cells. Further, electron lifetime increased by employing an atomic-layer-deposited TiO 2 nanoshell between the TiO 2 leaves and the SnO 2 nanowire, due to preventing charge recombination at the nanowire/electrolytemore » interface.« less

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

NASA Astrophysics Data System (ADS)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-02-01

SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

PubMed

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.

2016-07-06

CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

A Low Temperature, Solution-Processed Poly(4-vinylphenol), YO(x) Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor.

PubMed

Shin, Hyeonwoo; Kang, Chan-Mo; Chae, Hyunsik; Kim, Hyun-Gwan; Baek, Kyu-Ha; Choi, Hyoung Jin; Park, Man-Young; Do, Lee-Mi; Lee, Changhee

2016-03-01

Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI) have been investigated in recent years. We investigated the effects of the organic/inorganic bi-layer GI to ZnO thin film transistors (TFTs). PVP, YO(x) nanoparticle composite, and polysilazane bi-layer showed low leakage current (-10(-8) A/cm2 in 2 MV), which are applicable in low temperature processed MEOTFTs. Polysilazane was used as an interlayer between ZnO and PVP, YO(x) nanoparticle composite as a good charge transport interface with ZnO. By applying the PVP, YO(x), nanoparticle composite/polysilazane bi-layer structure to ZnO TFTs, we successfully suppressed the off current (I(off)) to -10(-11) and fabricated good MEOTFTs in 180 degrees C.

ZnO thin films and nanostructures for emerging optoelectronic applications

NASA Astrophysics Data System (ADS)

Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

2010-02-01

ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have <0.5% reflectivity over the whole visible spectrum for angles of incidence between 10 and 60 degrees. Such nanostructures may be useful for applications such as AR coatings on solar cells. Compliant ZnO layers on mismatched/amorphous substrates were shown to have potential for MOVPE regrowth of GaN. This approach could be used as a means to facilitate lift-off of GaN-based LEDs from insulating sapphire substrates and could allow the growth of InGaN-based solar cells on cheap substrates. The green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

Structural enhancement of ZnO on SiO2 for photonic applications

NASA Astrophysics Data System (ADS)

Ruth, Marcel; Meier, Cedrik

2013-07-01

Multi-layer thin films are often the basis of photonic devices. Zinc oxide (ZnO) with its excellent optoelectronic properties can serve as a high quality emitter in structures like microdisks or photonic crystals. Here, we present a detailed study on the enhancement of the structural properties of low-temperature MBE grown ZnO on silica (SiO2). By thermal annealing a grain coalescence of the initially polycrystalline layer leads to an enhancement of the electronic structure, indicated by a blue shift of the photoluminescence (PL) signal maximum. Oxygen atmosphere during the annealing process prevents the creation of intrinsic defects by out-diffusion. Pre-annealing deposited SiO2 capping layers instead obstruct the recrystallization and lead to less intense emission. While thin capping layers partially detach from the ZnO film at high temperatures and cause higher surface roughness and the weakest emission, thicker layers remain smoother and exhibit a significantly stronger photoluminescence.

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

PubMed

Lee, Jae-Kyu; Choi, Duck-Kyun

2012-07-01

Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.

Spectroscopic Study of Deep Level Emissions from Acceptor Defects in ZnO Thin Films with Oxygen Rich Stoichiometry

NASA Astrophysics Data System (ADS)

Ilyas, Usman; Rawat, R. S.; Tan, T. L.

2013-10-01

This paper reports the tailoring of acceptor defects in oxygen rich ZnO thin films at different post-deposition annealing temperatures (500-800°C) and Mn doping concentrations. The XRD spectra exhibited the nanocrystalline nature of ZnO thin films along with inconsistent variation in lattice parameters suggesting the temperature-dependent activation of structural defects. Photoluminescence emission spectra revealed the temperature dependent variation in deep level emissions (DLE) with the presence of acceptors as dominating defects. The concentration of native defects was estimated to be increased with temperature while a reverse trend was observed for those with increasing doping concentration. A consistent decrease in DLE spectra, with increasing Mn content, revealed the quenching of structural defects in the optical band gap of ZnO favorable for good quality thin films with enhanced optical transparency.

Surface plasmon resonance study on the optical sensing properties of tin oxide (SnO2) films to NH3 gas

NASA Astrophysics Data System (ADS)

Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

2016-04-01

Surface plasmon resonance (SPR) technique is an easy and reliable method for detecting very low concentration of toxic gases at room temperature using a gas sensitive thin film layer. In the present work, a room temperature operated NH3 gas sensor has been developed using a laboratory assembled SPR measurement setup utilising a p-polarized He-Ne laser and prism coupling technique. A semiconducting gas sensitive tin oxide (SnO2) layer has been deposited under varying growth conditions (i.e., by varying deposition pressure) over the gold coated prism (BK-7) to excite the surface plasmon modes in Kretschmann configuration. The SPR reflectance curves for prism/Au/SnO2/air system for SnO2 thin films prepared at different sputtering pressure were measured, and the SnO2 film deposited at 10 mT pressure is found to exhibit a sharp SPR reflectance curve with minimum reflectance (0.32) at the resonance angle of 44.7° which is further used for sensing NH3 gas of different concentration at room temperature. The SPR reflectance curve shows a significant shift in resonance angle from 45.05° to 58.55° on interacting with NH3. The prepared sensor is found to give high sensing response (0.11) with high selectivity towards very low concentration of NH3 (0.5 ppm) and quick response time at room temperature.

Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Wei-Bin; Li, Fei; Chen, Hong-Ming

2015-06-15

Er-doped ZnO thin films have been prepared by using inductively coupled plasma enhanced physical vapor deposition at different O{sub 2}:Ar gas flow ratio (R = 0:30, 1:30, 1:15, 1:10 and 1:6). The influence of oxygen partial pressure on the structural, optical and magnetic properties was studied. It is found that an appropriate oxygen partial pressure (R=1:10) can produce the best crystalline quality with a maximum grain size. The internal strain, estimated by fitting the X-ray diffraction peaks, varied with oxygen partial pressure during growth. PL measurements show that plenty of defects, especially zinc vacancy, exist in Er-doped ZnO films. Allmore » the samples show room-temperature ferromagnetism. Importantly, the saturation magnetization exhibits similar dependency on oxygen partial pressure with the internal strain, which indicates that internal strain has an important effect on the magnetic properties of Er-doped ZnO thin films.« less

Time-Resolved Optical Emission Spectroscopy Diagnosis of CO2 Laser-Produced SnO2 Plasma

NASA Astrophysics Data System (ADS)

Lan, Hui; Wang, Xinbing; Zuo, Duluo

2016-09-01

The spectral emission and plasma parameters of SnO2 plasmas have been investigated. A planar ceramic SnO2 target was irradiated by a CO2 laser with a full width at half maximum of 80 ns. The temporal behavior of the specific emission lines from the SnO2 plasma was characterized. The intensities of Sn I and Sn II lines first increased, and then decreased with the delay time. The results also showed a faster decay of Sn I atoms than that of Sn II ionic species. The temporal evolutions of the SnO2 plasma parameters (electron temperature and density) were deduced. The measured temperature and density of SnO2 plasma are 4.38 eV to 0.5 eV and 11.38×1017 cm-3 to 1.1×1017 cm-3, for delay times between 0.1 μs and 2.2 μs. We also investigated the effect of the laser pulse energy on SnO2 plasma. supported by National Natural Science Foundation of China (No. 11304235) and the Director Fund of WNLO

Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon

NASA Astrophysics Data System (ADS)

Ayouchi, R.; Martin, F.; Leinen, D.; Ramos-Barrado, J. R.

2003-01-01

Structural, morphological, optical and electrical properties of ZnO thin films prepared by chemical spray pyrolysis from zinc acetate (Zn(CH 3COO) 2 2H 2O) aqueous solutions, on polished Si(1 0 0), and fused silica substrates for optical characterization, have been studied in terms of deposition time and substrate temperature. The growth of the films present three regimes depending on the substrate temperature, with increasing, constant and decreasing growth rates at lower, middle, and higher-temperature ranges, respectively. Growth rate higher than 15 nm min -1 can be achieved at Ts=543 K. ZnO film morphological and electrical properties have been related to these growth regimes. The films have been characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.

Facile fabrication of robust TiO2@SnO2@C hollow nanobelts for outstanding lithium storage

NASA Astrophysics Data System (ADS)

Tian, Qinghua; Li, Lingxiangyu; Chen, Jizhang; Yang, Li; Hirano, Shin-ichi

2018-02-01

Elaborate fabrication of state-of-the-art nanostructure SnO2@C-based composites greatly contributes to alleviate the huge volume expansion issue of the SnO2 anodes. But the preparation processes of most of them are complicated and tedious, which is generally adverse to the development of SnO2@C-based composite anodes. Herein, a unique nanostructure of TiO2@SnO2@C hollow nanobelts (TiO2@SnO2@C HNBs), including the characteristics of one-dimensional architecture, sandwich protection, hollow structure, carbon coating, and a mechanically robust TiO2 support, has been fabricated by a facile approach for the first time. As anodes for lithium-ion batteries, the as-fabricated TiO2@SnO2@C HNBs exhibit an outstanding lithium storage performance, delivering capacity of 804.6 and 384. 5 mAh g-1 at 200 and even 1000 mA g-1 after 500 cycles, respectively. It is demonstrated that thus outstanding performance is mainly attributed to the unique nanostructure of TiO2@SnO2@C HNBs.

Enhanced photovoltaic performance of dye sensitized solar cell using SnO2 nanoflowers

NASA Astrophysics Data System (ADS)

Arote, Sandeep A.; Tabhane, Vilas A.; Pathan, Habib M.

2018-01-01

The study highlighted enhanced performance of SnO2 based DSSC using photoanode with nanostructured morphology. The simple organic surfactant free hydrothermal synthesis method was used for preparation of SnO2 nanoflowers for dye sensitized solar cell (DSSC) application. The hydrothermal reaction time was varied to obtain different SnO2 nanostructures. The hydrothermal reaction time showed considerable effect on optical and structural properties of the prepared samples. The results indicated that the prepared samples were pure rutile SnO2. The band gap of prepared samples was greater than bulk SnO2 and varied from 3.64 to 3.81 eV with increase in hydrothermal reaction time. With increase in reaction time from 4 to 24 h, the microstructure of SnO2 changed from agglomerated nanoparticles to nanopetals and finally to self-assembled nanoflowers. Flower-like SnO2 nanostructures showed size around 300-700 nm, and composed of large numbers of 3 dimensional petals connected with each other forming 3D nanoflowers by self-assembly. Consequently, the DSSC with flower-like SnO2 nanostructures exhibited good photovoltaic performance with Voc, Jsc and η about 0.43 V, 4.36 mA/cm2 and 1.11%, respectively.

Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com; Ozcan, Yusuf; Orujalipoor, Ilghar

2016-06-07

In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactivemore » growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.« less

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

PubMed

Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

2015-10-14

Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)<10(-6) g m(-2) day(-1)) as well as the defect-free nature of the ALD dielectric and ZnO channel layers, the TFTs exhibit excellent device performance with high stability and flexibility: field-effect mobility>20 cm2 V(-1) s(-1), subthreshold swing<0.4 V decade(-1) after extended bias-stressing (>10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

Hierarchical MnO2/SnO2 heterostructures for a novel free-standing ternary thermite membrane.

PubMed

Yang, Yong; Zhang, Zhi-Cheng; Wang, Peng-Peng; Zhang, Jing-Chao; Nosheen, Farhat; Zhuang, Jing; Wang, Xun

2013-08-19

We report the synthesis of a novel hierarchical MnO2/SnO2 heterostructures via a hydrothermal method. Secondary SnO2 nanostructure grows epitaxially on the surface of MnO2 backbones without any surfactant, which relies on the minimization of surface energy and interfacial lattice mismatch. Detailed investigations reveal that the cover density and morphology of the SnO2 nanostructure can be tailored by changing the experimental parameter. Moreover, we demonstrate a bottom-up method to produce energetic nanocomposites by assembling nanoaluminum (n-Al) and MnO2/SnO2 hierarchical nanostructures into a free-standing MnO2/SnO2/n-Al ternary thermite membrane. This assembled approach can significantly reduce diffusion distances and increase their intimacy between the components. Different thermite mixtures were investigated to evaluate the corresponding activation energies using DSC techniques. The energy performance of the ternary thermite membrane can be manipulated through different components of the MnO2/SnO2 heterostructures. Overall, our work may open a new route for new energetic materials.

SnO2/Pt Thin Film Laser Ablated Gas Sensor Array

PubMed Central

Shahrokh Abadi, Mohammad Hadi; Hamidon, Mohd Nizar; Shaari, Abdul Halim; Abdullah, Norhafizah; Wagiran, Rahman

2011-01-01

A gas sensor array was developed in a 10 × 10 mm2 space using Screen Printing and Pulse Laser Ablation Deposition (PLAD) techniques. Heater, electrode, and an insulator interlayer were printed using the screen printing method on an alumina substrate, while tin oxide and platinum films, as sensing and catalyst layers, were deposited on the electrode at room temperature using the PLAD method, respectively. To ablate SnO2 and Pt targets, depositions were achieved by using a 1,064 nm Nd-YAG laser, with a power of 0.7 J/s, at different deposition times of 2, 5 and 10 min, in an atmosphere containing 0.04 mbar (4 kPa) of O2. A range of spectroscopic diffraction and real space imaging techniques, SEM, EDX, XRD, and AFM were used in order to characterize the surface morphology, structure, and composition of the films. Measurement on the array shows sensitivity to some solvent and wood smoke can be achieved with short response and recovery times. PMID:22164041

Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

NASA Astrophysics Data System (ADS)

Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

2018-06-01

ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

Effect of pressure-assisted thermal annealing on the optical properties of ZnO thin films.

PubMed

Berger, Danielle; Kubaski, Evaldo Toniolo; Sequinel, Thiago; da Silva, Renata Martins; Tebcherani, Sergio Mazurek; Varela, José Arana

2013-01-01

ZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin-coating technique, and were annealed at 330 °C for 32 h under pressure-assisted thermal annealing and under ambient pressure. Their structural and optical properties were characterized, and the phases formed were identified by X-ray diffraction. No secondary phase was detected. The ZnO thin films were also characterized by field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, photoluminescence and ultraviolet emission intensity measurements. The effect of pressure on these thin films modifies the active defects that cause the recombination of deep level states located inside the band gap that emit yellow-green (575 nm) and orange (645 nm) photoluminescence. Copyright © 2012 John Wiley & Sons, Ltd.

Properties of Resistive Hydrogen Sensors as a Function of Additives of 3 D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films

NASA Astrophysics Data System (ADS)

Sevast'yanov, E. Yu.; Maksimova, N. K.; Potekaev, A. I.; Sergeichenko, N. V.; Chernikov, E. V.; Almaev, A. V.; Kushnarev, B. O.

2017-11-01

Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO2 films coated with dispersed Au layers and containing Au+Ni and Au+Co impurities in the bulk showed that the characteristics of these sensors are more stable under the prolonged exposure to hydrogen in comparison with Au/SnO2:Sb, Au films modified only with gold. It has been found that introduction of the nickel and cobalt additives increases the band bending at the grain boundaries of tin dioxide already in freshly prepared samples, which indicates an increase in the density Ni of the chemisorbed oxygen. It is important that during testing, the band bending eφs at the grain boundaries of tin dioxide additionally slightly increases. It can be assumed that during crystallization of films under thermal annealing, the 3d-metal atoms in the SnO2 volume partially segregate on the surface of microcrystals and form bonds with lattice oxygen, the superstoichiometric tin atoms are formed, and the density Ni increases. If the bonds of oxygen with nickel and cobalt are stronger than those with tin, then, under the prolonged tests, atomic hydrogen will be oxidized not by lattice oxygen, but mainly by the chemisorbed one. In this case, stability of the sensors' characteristics increases.

Growth process optimization of ZnO thin film using atomic layer deposition

NASA Astrophysics Data System (ADS)

Weng, Binbin; Wang, Jingyu; Larson, Preston; Liu, Yingtao

2016-12-01

The work reports experimental studies of ZnO thin films grown on Si(100) wafers using a customized thermal atomic layer deposition. The impact of growth parameters including H2O/DiethylZinc (DEZn) dose ratio, background pressure, and temperature are investigated. The imaging results of scanning electron microscopy and atomic force microscopy reveal that the dose ratio is critical to the surface morphology. To achieve high uniformity, the H2O dose amount needs to be at least twice that of DEZn per each cycle. If the background pressure drops below 400 mTorr, a large amount of nanoflower-like ZnO grains would emerge and increase surface roughness significantly. In addition, the growth temperature range between 200 °C and 250 °C is found to be the optimal growth window. And the crystal structures and orientations are also strongly correlated to the temperature as proved by electron back-scattering diffraction and x-ray diffraction results.

Microstructure study of ZnO thin films on Si substrate grown by MOCVD

NASA Astrophysics Data System (ADS)

Huang, Jingyun; Ye, Zhizhen; Lu, Huanming; Wang, Lei; Zhao, Binghui; Li, Xianhang

2007-08-01

The microstructure of zinc oxide thin films on silicon substrates grown by metalorganic chemical vapour deposition (MOCVD) was characterized. The cross-sectional bright-field transmission electron microscopy (TEM) image showed that small ZnO columnar grains were embedded into large columnar grains, and the selected-area electron diffraction pattern showed that the ZnO/Si thin films were nearly c-axis oriented. The deviation angle along the ZnO (0 0 0 1) direction with respect to the growth direction of Si (1 0 0) was no more than 5°. The [0 0 0 1]-tilt grain boundaries in ZnO/Si thin films were investigated symmetrically by plan-view high resolution TEM. The boundaries can be classified into three types: low-angle boundaries described as an irregular array of edge dislocations, boundaries of near 30° angle with (1\\,0\\,\\bar{1}\\,0) facet structures and large-angle boundaries with symmetric structure which could be explained by a low Σ coincident site lattice structure mode. The research was useful to us for finding optimized growth conditions to improve ZnO/Si thin film quality.

Microstructural, Optical and Dielectric Properties of Al-Incorporated SnO2 Nanoparticles

NASA Astrophysics Data System (ADS)

Ahmed, Ateeq; Tripathi, P.; Naseem Siddique, M.; Ali, Tinku

2017-08-01

In this work, Pure SnO2 and Al doped SnO2 nanoparticles with the composition Sn1-xAlxO2 (x = 0, and 0.05) have been successfully prepared using sol-gel technique. The effect of Al dopant on microstructural, optical and dielectric properties has been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Ultraviolet (UV-Visible) absorption spectroscopy andImpedance spectroscopy (LCR meter)respectively. The XRD patterns indicated tetragonal rutile structure with single phase without any detectable impurity for all samples and incorporation of Al ions into the SnO2 lattice. Crystalline size decreased with aluminum content. The results of SEM confirm nanoparticles size decreases with Al dopant. UV-Visible results showed that optical band also decreases when Al is doped into pure SnO2 lattice. Frequency dependent dielectric properties of pure and doped SnO2 nanoparticles have been also studied.

Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H. F.; Chua, S. J.; Hu, G. X.

2007-10-15

X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate whilemore » a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)« less

Simultaneous detection of morphine and codeine in urine samples of heroin addicts using multi-walled carbon nanotubes modified SnO2-Zn2SnO4 nanocomposites paste electrode

NASA Astrophysics Data System (ADS)

Taei, M.; Hasanpour, F.; Hajhashemi, V.; Movahedi, M.; Baghlani, H.

2016-02-01

The SnO2-Zn2SnO4 nanocomposite was successfully prepared via a simple solid state method. Then, a chemically modified electrode based on incorporating SnO2-Zn2SnO4 into multi-walled carbon nanotube paste matrix (MWCNTs/SnO2-Zn2SnO4/CPE) was prepared for the simultaneous determination of morphine(MO) and codeine (CO). The measurements were carried out by application of differential pulse voltammetry (DPV), cyclic voltammetry, and chronoamperometry. The MWCNTs/SnO2-Zn2SnO4/CPE showed an efficient electrocatalytic activity for the oxidation of MO and CO. The separation of the oxidation peak potential for MO-CO was about 550 mV. The calibration curves obtained for MO and CO were in the ranges of 0.1-310 μmol L-1 and 0.1-600.0 μmol L-1, respectively. The detection limits (S/N = 3) were 0.009 μmol L-1 for both drugs. The method also successfully employed as a selective, simple, and precise method for the determination of MO and CO in pharmaceutical and biological samples.

Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

NASA Astrophysics Data System (ADS)

Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De la Cruz, W.; Ramírez-Bon, R.

2018-03-01

SnO p-type was used as active layer to fabricate thin film transistors (TFTs) through photolithography and dry etching processes. The SnO p-type thin films (25 nm) were deposited by DC reactive sputtering with variable oxygen (O2) flow rate to then be annealed in air at 250 ◦C. Al2O3 gate dielectric (15 nm) was deposited by atomic layer deposition. Hall measurements showed p-type carrier concentration (N h ) of around 1 × 1018 cm-3 and Hall mobilities (μ Hall) between 0.35 and 2.64 cm2 V-1 s-1, depending on the O2 flow rate during deposition. The hole transport was dominated by variable-range hopping conduction. A change in the preferred crystalline orientation in the SnO films from (101) to (110) was associated with the increase in μ Hall. In addition, Raman vibrational modes at 110 and 209 cm-1 of polycrystalline SnO films showed certain dependence with the grain orientation. The SnO-based TFTs showed p-type behavior with low threshold voltages (V T ) and low sub threshold swing (SS) in the range from 1.76 to 3.50 V and 1.63 to 3.24 V/dec., respectively. The TFTs mobilities in the saturation regime (μ sat) were in the range of 0.12 and 1.32 cm2 V-1 s-1. The current on/off ratio (I ON/I OFF) was in the order of 102, approximately. The large values of the interface trap density (D IT) contributed to the high I OFF and the low I ON/I OFF of the TFTs.

Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires.

PubMed

Alonso-Orts, Manuel; Sánchez, Ana M; Hindmarsh, Steven A; López, Iñaki; Nogales, Emilio; Piqueras, Javier; Méndez, Bianchi

2017-01-11

Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO 2 /Ga 2 O 3 complex nanostructures. Ga 2 O 3 nanowires decorated with either crossing SnO 2 nanowires or SnO 2 particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga 2 O 3 nanowires. Ga 2 O 3 nanowires grown along the [001] direction favor the formation of crossing SnO 2 nanowires. Alternatively, SnO 2 forms rhombohedral particles on [110] Ga 2 O 3 nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor-solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga 2 O 3 acted as substrates, [110] Ga 2 O 3 nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga 2 O 3 axis and SnO 2 particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga 2 O 3 nanowires, growing along the [001], with crossing SnO 2 wires. The SnO 2 /Ga 2 O 3 junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO 2 on its particular shape. Orange emission dominates in SnO 2 /Ga 2 O 3 crossing wires while green-blue emission is observed in SnO 2 particles attached to Ga 2

Microwave-Hydrothermal Synthesis of SnO2-CNTs Hybrid Nanocomposites with Visible Light Photocatalytic Activity.

PubMed

Wu, Shuisheng; Dai, Weili

2017-03-03

SnO2 nanoparticles coated on carbon nanotubes (CNTs) were prepared via a simple microwave-hydrothermal route. The as-obtained SnO2-CNTs composites were characterized using X-ray powder diffraction, Raman spectroscopy, and transmission electron microscopy. The photocatalytic activity of as-prepared SnO2-CNTs for degradation of Rhodamine B under visible light irradiation was investigated. The results show that SnO2-CNTs nanocomposites have a higher photocatalytic activity than pure SnO2 due to the rapid transferring of electrons and the effective separation of holes and electrons on SnO2-CNTs.

Microwave-Hydrothermal Synthesis of SnO2-CNTs Hybrid Nanocomposites with Visible Light Photocatalytic Activity

PubMed Central

Wu, Shuisheng; Dai, Weili

2017-01-01

SnO2 nanoparticles coated on carbon nanotubes (CNTs) were prepared via a simple microwave-hydrothermal route. The as-obtained SnO2-CNTs composites were characterized using X-ray powder diffraction, Raman spectroscopy, and transmission electron microscopy. The photocatalytic activity of as-prepared SnO2-CNTs for degradation of Rhodamine B under visible light irradiation was investigated. The results show that SnO2-CNTs nanocomposites have a higher photocatalytic activity than pure SnO2 due to the rapid transferring of electrons and the effective separation of holes and electrons on SnO2-CNTs. PMID:28336888

Highly electrically conductive layered carbon derived from polydopamine and its functions in SnO2-based lithium ion battery anodes.

PubMed

Kong, Junhua; Yee, Wu Aik; Yang, Liping; Wei, Yuefan; Phua, Si Lei; Ong, Hock Guan; Ang, Jia Ming; Li, Xu; Lu, Xuehong

2012-10-25

Thin carbonized polydopamine (C-PDA) coatings are found to have similar structures and electrical conductivities to those of multilayered graphene doped with heteroatoms. Greatly enhanced electrochemical properties are achieved with C-PDA-coated SnO(2) nanoparticles where the coating functions as a mechanical buffer layer and conducting bridge.

Melioration of Optical and Electrical Performance of Ga-N Codoped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-06-01

Transparent and conducting p-type zinc oxide (ZnO) thin films doped with gallium (Ga) and nitrogen (N) simultaneously were deposited on glass substrates by spray pyrolysis technique. Phase composition analysis by X-ray diffraction confirmed the polycrystallinity of the films with pure ZnO phase. Energy dispersive X-ray analysis showed excellent incorporation of N in the ZnO matrix by means of codoping. The optical transmittance of N monodoped film was poor but got improved with Ga-N codoping and also resulted in the enhancement of optical energy gap. Hole concentration increased with codoping and consequently, lower resistivity and high stability were obtained.

Ti/IrO2/SnO2 anode for electrochemical degradation of chlorpyrifos in water: optimization and degradation performances

NASA Astrophysics Data System (ADS)

Pathiraja, G. C.; Wijesingha, M. S.; Nanayakkara, N.

2017-05-01

Chlorpyrifos, a widely used organophosphate pesticide which can be found in surface water bodies, is harmful for human body. Thus, treating water contaminated with chlorpyrifos is important. In our previous studies, novel Ti/IrO2-SnO2 anode was successfully developed for electrochemical degradation of chlorpyrifos in chloride free water. In this study, optimization of previously developed Ti/IrO2-SnO2 anode for mineralization of chlorpyrifos was successfully performed through response surface methodology. During the optimization study, two-level factorial design was used to determine the optimal coating solutions concentration for developing the Ti/IrO2-SnO2 anode. Cyclic voltammetry and open circuit potential were performed to investigate the electrochemically active surface area and stability of these anodes. The response surface and contour plots show that 0.3 M of [Ir] and 7.5 mM of [Sn] coated electrode has both highest anodic charge and stability. Scanning Electron Microscopic (SEM) images show the evidence of having both compact and porous regions in the surface of the thin film, resulting larger surface area. Within 6 h, the best result for mineralization (55.56%) of chlorpyrifos was obtained with 0.3 M of [Ir] and 7.5 mM of [Sn] coated anode using Total organic Carbon (TOC) analyzer. Therefore, the optimum coating concentration was found as 0.3 M of [Ir] and 7.5 mM of [Sn]. It would require an energy consumption of 6 kWhm-3.

New Materials for Chalcogenide Based Solar Cells

NASA Astrophysics Data System (ADS)

Tosun, Banu Selin

Thin film solar cells based on copper indium gallium diselenide (CIGS) have achieved efficiencies exceeding 20 %. The p-n junction in these solar cells is formed between a p-type CIGS absorber layer and a composite n-type film that consists of a 50-100 nm thin n-type CdS followed by a 50-200 nm thin n-type ZnO. This dissertation focuses on developing materials for replacing CdS and ZnO films to improve the damp-heat stability of the solar cells and for minimizing the use of Cd. Specifically, I demonstrate a new CIGS solar cell with better damp heat stability wherein the ZnO layer is replaced with SnO2. The efficiency of solar cells made with SnO2 decreased less than 5 % after 120 hours at 85 °C and 85 % relative humidity while the efficiency of solar cells made with ZnO declined by more than 70 %. Moreover, I showed that a SnO2 film deposited on top of completed CIGS solar cells significantly increased the device lifetime by forming a barrier against water diffusion. Semicrystalline SnO2 films deposited at room temperature had nanocrystals embedded in an amorphous matrix, which resulted in films without grain boundaries. These films exhibited better damp-heat stability than ZnO and crystalline SnO2 films deposited at higher temperature and this difference is attributed to the lack of grain boundary water diffusion. In addition, I studied CBD of Zn1-xCdxS from aqueous solutions of thiourea, ethylenediaminetetraacetic acid and zinc and cadmium sulfate. I demonstrated that films with varying composition (x) can be deposited through CBD and studied the structure and composition variation along the films' thickness. However, this traditional chemical bath deposition (CBD) approach heats the entire solution and wastes most of the chemicals by homogenous particle formation. To overcome this problem, I designed and developed a continuous-flow CBD approach to utilize the chemicals efficiently and to eliminate homogenous particle formation. Only the substrate is heated to

Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Remashan, Kariyadan; Hwang, Dae-Kue; Park, Seong-Ju; Jang, Jae-Hyung

2008-04-01

Thin-film transistors (TFTs) with a bottom-gate configuration were fabricated with an RF magnetron sputtered undoped zinc oxide (ZnO) channel layer and plasma-enhanced chemical vapor deposition (PECVD) grown silicon nitride as a gate dielectric. Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2O) plasma treatment were employed to improve the performance of ZnO TFTs in terms of on-current and on/off current ratio. The RTA treatment increases the on-current of the TFT significantly, but it also increases its off-current. The off-current of 2×10-8 A and on/off current ratio of 3×103 obtained after the RTA treatment were improved to 10-10 A and 105, respectively, by the subsequent N2O plasma treatment. The better device performance can be attributed to the reduction of oxygen vacancies at the top region of the channel due to oxygen incorporation from the N2O plasma. X-ray photoelectron spectroscopy (XPS) analysis of the TFT samples showed that the RTA-treated ZnO surface has more oxygen vacancies than as-deposited samples, which results in the increased drain current. The XPS study also showed that the subsequent N2O plasma treatment reduces oxygen vacancies only at the surface of ZnO so that the better off-current and on/off current ratio can be obtained.

DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

PubMed

Lee, Hye Ji; Noviyana, Imas; Putri, Maryane; Koo, Chang Young; Lee, Jung-A; Kim, Jeong-Joo; Jeong, Youngjun; Lee, Youngu; Lee, Hee Young

2018-02-01

IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determined by ultraviolet-visible spectroscopy was higher than 85% for all films. The minimum resistivity of the annealed IZTO20 thin film was approximately 6.1×10-4 Ω·cm, which tended to increase with decreasing indium content. Substrate heating and annealing were found to be important parameters affecting the electrical and optical properties. An organic photovoltaic (OPV) cell was fabricated using the IZTO20 film deposited under the optimized condition as an anode electrode and the efficiency of up to 80% compared to that of a similar OPV cell using ITO film was observed. Reduction of surface roughness and electrical resistivity through annealing treatment was found to contribute to the improved efficiency of the OPV cell.

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

NASA Astrophysics Data System (ADS)

Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

2017-07-01

Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Surface nanostructuring of thin film composite membranes via grafting polymerization and incorporation of ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Isawi, Heba; El-Sayed, Magdi H.; Feng, Xianshe; Shawky, Hosam; Abdel Mottaleb, Mohamed S.

2016-11-01

A new approach for modification of polyamid thin film composite membrane PA(TFC) using synthesized ZnO nanoparticles (ZnO NPs) was shown to enhance the membrane performances for reverse osmosis water desalination. First, active layer of synthesis PA(TFC) membrane was activated with an aqueous solution of free radical graft polymerization of hydrophilic methacrylic acid (MAA) monomer onto the surface of the PA(TFC) membrane resulting PMAA-g-PA(TFC). Second, the PA(TFC) membrane has been developed by incorporation of ZnO NPs into the MAA grafting solution resulting the ZnO NPs modified PMAA-g-PA(TFC) membrane. The surface properties of the synthesized nanoparticles and prepared membranes were investigated using the FTIR, XRD and SEM. Morphology studies demonstrated that ZnO NPs have been successfully incorporated into the active grafting layer over PA(TFC) composite membranes. The zinc leaching from the ZnO NPs modified PMAA-g-PA(TFC) was minimal, as shown by batch tests that indicated stabilization of the ZnO NPs on the membrane surfaces. Compared with the a pure PA(TFC) and PMAA-g-PA(TFC) membranes, the ZnO NPs modified PMAA-g-PA(TFC) was more hydrophilic, with an improved water contact angle (∼50 ± 3°) over the PMAA-g-PA(TFC) (63 ± 2.5°). The ZnO NPs modified PMAA-g-PA(TFC) membrane showed salt rejection of 97% (of the total groundwater salinity), 99% of dissolved bivalent ions (Ca2+, SO42-and Mg2+), and 98% of mono valent ions constituents (Cl- and Na+). In addition, antifouling performance of the membranes was determined using E. coli as a potential foulant. This demonstrates that the ZnO NPs modified PMAA-g-PA(TFC) membrane can significantly improve the membrane performances and was favorable to enhance the selectivity, permeability, water flux, mechanical properties and the bio-antifouling properties of the membranes for water desalination.

Study of lattice strain and optical properties of nanocrystalline SnO2

NASA Astrophysics Data System (ADS)

Ahmad, Naseem; Khan, Shakeel; Bhargava, Richa; Ansari, Mohd Mohsin Nizam

2018-05-01

Nanocrystalline SnO2 has been synthesized by co-precipitation method by using two solvents (water and ethylene glycol). The structure and surface morphology were investigated using XRD and scanning electron microscope (SEM). The optical properties were studied using diffused reflectance spectroscopy (DRS). From the XRD analysis, the prepared materials are found to be pure crystalline with tetragonal rutile structure. The lattice strain and crystallite size, were calculated using Williamson-Hall method, are found to be 0.00413 & 16.3 nm in water assisted SnO2 and 0.00495 & 35.6 nm for EG assisted SnO2. Study of surface morphology of the samples was carried out using SEM. It has been seen that the solvents which are used in synthesis can also alter the optical properties of the materials. The optical band gap of the water based SnO2 and EG based SnO2 are found to be 3.92eV and 3.86eV respectively.

Facile synthesis of SnO2/α-Fe2O3 nanocomposite for supercapacitor capacitor applications

NASA Astrophysics Data System (ADS)

Rani, B. Jansi; Saravanakumar, B.; Ravi, G.; Yuvakkumar, R.

2018-05-01

Facile and economically viable one step hydrothermal route was adapted to synthesis SnO2/α-Fe2O3 nanocomposite with and without hexamine (HMT) as surfactant successfully. The formation of SnO2/α-Fe2O3 nanocomposite was confirmed through XRD, Raman, PL and FTIR studies. The presence of well defined XRD diffraction peaks of both SnO2 and α-Fe2O3 revealed the formation SnO2/α-Fe2O3 nanocomposite. The obtained characteristic Raman active (Eg+Eg+Eu+A2u) mode of vibrations confirmed the formation of SnO2/α-Fe2O3 nanocomposite. Photoluminescence study revealed the emission behavior of the product. Metal oxygen vibrations of Fe-O in both octahedral, tetrahedral sites and Sn-O were confirmed by the bands located at 466, 580 and 673 cm-1 respectively through FTIR. The spherical morphology of the product synthesized with and without the surfactant HMT has been revealed by SEM images. The electrochemical behavior of the product was investigated through CV and EIS studies in 1M Na2SO4 electrolyte solution and obtained the highest specific capacitance of 211.25 F/g at 5 mV for the surfactant assisted product.

Effect of Fe incorporation on the optical behavior of ZnO thin films prepared by sol-gel derived spin coating techniques

NASA Astrophysics Data System (ADS)

Rakkesh, R. Ajay; Malathi, R.; Balakumar, S.

2013-02-01

In this work, Fe doped Zinc Oxide (ZnO) thin films were fabricated on the glass substrate by sol-gel derived spin coating technique. X-ray Diffraction studies revealed that the obtained pure and Fe doped ZnO thin films were in the wurtzite and spinel phase respectively. The three well defined Raman lines at 432, 543 and 1091 cm-1 also confirmed the lattice structure of the ZnO thin film has wurtzite symmetry. While doping Fe atoms in the ZnO, there was a significant change in the phase from wurtzite to spinel structure; owing to Fe (III) ions being incorporated into the lattice through substitution of Zn (II) ions. Room temperature PL spectra showed that the role of defect mediated red emissions at 612 nm was due to radial recombination of a photogenerated hole with an electron that belongs to the Fe atoms, which were discussed in detail.

Evaluation of SnO2 for sunlight photocatalytic decontamination of water.

PubMed

Aslam, M; Qamar, M Tariq; Ali, Shahid; Rehman, Ateeq Ur; Soomro, M T; Ahmed, Ikram; Ismail, I M I; Hameed, A

2018-07-01

The broad bandgap tin (IV) oxide (SnO 2 ) is the least investigated semiconductor material for photocatalytic water decontamination in sunlight exposure. A detailed study covering the synthesis, characterization and the evaluation of photocatalytic activity of SnO 2 , in the natural sunlight exposure, is presented. The structural characterization by XRD revealed the formation of phase pure tetragonal SnO 2 with the average crystallite size of ∼41.5 nm whereas minor Sn 2+ states in the material were identified by XPS analysis. As explored by diffuse reflectance (DR) and photoluminescence (PL) spectroscopy, the material exhibited a distinct absorption edge at ∼3.4 eV. The morphological and microstructure analysis of the synthesized SnO 2 was carried out by FESEM and HRTEM. The electrochemical impedance spectroscopy (EIS) and chronopotentiometry (CP) predicted the better charge transport and retention ability of the material under illumination whereas the Mott-Schottky extrapolation prophesied the n-type behavior with the flat-band potential of -0.60 V. The photocatalytic activity of SnO 2 was assessed in the exposure of complete spectrum natural sunlight for the removal of 2,4,6-trichlorophenol. The HPLC and TOC analysis monitored the progress of degradation and mineralization whereas the released chloride ions were evaluated by ion chromatography. The effect of the transition metal ions (Fe 3+ , Cu 2+ , Ni 2+, and Zn 2+ ) as electron capture agents and H 2 O 2 as ROS generator was explored during the degradation process. The utility of the material for the simultaneous removal of chlorophenols in the mixture was also investigated. The SnO 2 exhibited sustained activity in the repeated use. Based on experimental evidence congregated, the mechanism of the removal process and the efficacy of SnO 2 for sunlight photocatalytic decontamination of water was established. Copyright © 2018 Elsevier Ltd. All rights reserved.

Effect of Annealing Temperature on Structural and Optical Properties of Sol-Gel-Derived ZnO Thin Films

NASA Astrophysics Data System (ADS)

Arif, Mohd.; Sanger, Amit; Vilarinho, Paula M.; Singh, Arun

2018-04-01

Nanocrystalline ZnO thin films were deposited on glass substrate via sol-gel dip-coating technique then annealed at 300°C, 400°C, and 500°C for 1 h. Their optical, structural, and morphological properties were studied using ultraviolet-visible (UV-Vis) spectrophotometry, x-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM). XRD diffraction revealed that the crystalline nature of the thin films increased with increasing annealing temperature. The c-axis orientation improved, and the grain size increased, as indicated by increased intensity of the (002) plane peak at 2θ = 34.42° corresponding to hexagonal ZnO crystal. The average crystallite size of the thin films ranged from 13 nm to 23 nm. Increasing the annealing temperature resulted in larger crystallite size and higher crystallinity with increased surface roughness. The grain size according to SEM analysis was in good agreement with the x-ray diffraction data. The optical bandgap of the thin films narrowed with increasing annealing temperature, lying in the range of 3.14 eV to 3.02 eV. The transmission of the thin films was as high as 94% within the visible region. The thickness of the thin films was 400 nm, as measured by ellipsometry, after annealing at the different temperatures of 300°C, 400°C, and 500°C.

Synthesis and Gas Sensing Properties of Single La-Doped SnO2 Nanobelts

PubMed Central

Wu, Yuemei; Zhang, Heng; Liu, Yingkai; Chen, Weiwu; Ma, Jiang; Li, Shuanghui; Qin, Zhaojun

2015-01-01

Single crystal SnO2 nanobelts (SnO2 NBs) and La-SnO2 nanobelts (La-SnO2 NBs) were synthesized by thermal evaporation. Both a single SnO2 NB sensor and a single La-SnO2 NB sensor were developed and their sensing properties were investigated. It is found that the single La-SnO2 NB sensor had a high sensitivity of 8.76 to ethanediol at a concentration of 100 ppm at 230 °C, which is the highest sensitivity of a single SnO2 NB to ethanediol among three kinds of volatile organic (VOC) liquids studied, including ethanediol, ethanol, and acetone. The La-SnO2 NBs sensor also exhibits a high sensitivity, good selectivity and long-term stability with prompt response time to ethanediol. The mechanism behind the enhanced sensing performance of La-doped SnO2 nanobelts is discussed. PMID:26087374

ZnO synthesized in air by fs laser irradiation on metallic Zn thin films

NASA Astrophysics Data System (ADS)

Esqueda-Barrón, Y.; Herrera, M.; Camacho-López, S.

2018-05-01

We present results on rapid femtosecond laser synthesis of nanostructured ZnO. We used metallic Zn thin films to laser scan along straight tracks, until forming nanostructured ZnO. The synthesis dependence on laser irradiation parameters such as the per pulse fluence, integrated fluence, laser scan speed, and number of scans were explored carefully. SEM characterization showed that the morphology of the obtained ZnO is dictated by the integrated fluence and the laser scan speed; micro Raman and XRD results allowed to identify optimal laser processing conditions for getting good quality ZnO; and cathodoluminescence measurements demonstrated that a single laser scan at high per pulse laser fluence, but a medium integrated laser fluence and a medium laser scan speed favors a low density of point-defects in the lattice. Electrical measurements showed a correlation between resistivity of the laser produced ZnO and point-defects created during the synthesis. Transmittance measurements showed that, the synthesized ZnO can reach down to the supporting fused silica substrate under the right laser irradiation conditions. The physical mechanism for the formation of ZnO, under ultrashort pulse laser irradiation, is discussed in view of the distinct times scales given by the laser pulse duration and the laser pulse repetition rate.

REVIEW ARTICLE: Structure, microstructure and physical properties of ZnO based materials in various forms: bulk, thin film and nano

NASA Astrophysics Data System (ADS)

Singh, Shubra; Thiyagarajan, P.; Mohan Kant, K.; Anita, D.; Thirupathiah, S.; Rama, N.; Tiwari, Brajesh; Kottaisamy, M.; Ramachandra Rao, M. S.

2007-10-01

ZnO is a unique material that offers about a dozen different application possibilities. In spite of the fact that the ZnO lattice is amenable to metal ion doping (3d and 4f), the physics of doping in ZnO is not completely understood. This paper presents a review of previous research works on ZnO and also highlights results of our research activities on ZnO. The review pertains to the work on Al and Mg doping for conductivity and band gap tuning in ZnO followed by a report on transition metal (TM) ion doped ZnO. This review also highlights the work on the transport and optical studies of TM ion doped ZnO, nanostructured growth (ZnO polycrystalline and thin films) by different methods and the formation of unique nano- and microstructures obtained by pulsed laser deposition and chemical methods. This is followed by results on ZnO encapsulated Fe3O4 nanoparticles that show promising trends suitable for various applications. We have also reviewed the non-linear characteristic studies of ZnO based heterostructures followed by an analysis on the work carried out on ZnO based phosphors, which include mainly the nanocrystalline ZnO encapsulated SiO2, a new class of phosphor that is suitable for white light emission.

Defect studies of thin ZnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Vlček, M.; Čížek, J.; Procházka, I.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Mosnier, J.-P.

2014-04-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

2D SnO2 Nanosheets: Synthesis, Characterization, Structures, and Excellent Sensing Performance to Ethylene Glycol

PubMed Central

Wan, Wenjin; Li, Yuehua; Ren, Xingping; Zhao, Yinping; Gao, Fan; Zhao, Heyun

2018-01-01

Two dimensional (2D)SnO2 nanosheets were synthesized by a substrate-free hydrothermal route using sodium stannate and sodium hydroxide in a mixed solvent of absolute ethanol and deionized water at a lower temperature of 130 °C. The characterization results of the morphology, microstructure, and surface properties of the as-prepared products demonstrated that SnO2 nanosheets with a tetragonal rutile structure, were composed of oriented SnO2 nanoparticles with a diameter of 6–12 nm. The X-ray diffraction (XRD) and high-resolution transmission electron microscope (FETEM) results demonstrated that the dominant exposed surface of the SnO2 nanoparticles was (101), but not (110). The growth and formation was supposed to follow the oriented attachment mechanism. The SnO2 nanosheets exhibited an excellent sensing response toward ethylene glycol at a lower optimal operating voltage of 3.4 V. The response to 400 ppm ethylene glycol reaches 395 at 3.4 V. Even under the low concentration of 5, 10, and 20 ppm, the sensor exhibited a high response of 6.9, 7.8, and 12.0 to ethylene glycol, respectively. The response of the SnO2 nanosheets exhibited a linear dependence on the ethylene glycol concentration from 5 to 1000 ppm. The excellent sensing performance was attributed to the present SnO2 nanoparticles with small size close to the Debye length, the larger specific surface, the high-energy exposed facets of the (101) surface, and the synergistic effects of the SnO2 nanoparticles of the nanosheets. PMID:29462938

Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO{sub 2} seed layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asib, N. A. M., E-mail: amierahasib@yahoo.com; Afaah, A. N.; Aadila, A.

Titanium dioxide (TiO{sub 2}) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO{sub 2} seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO{sub 2} seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO{sub 2} seed layer of 0.100 M. PL spectramore » of the TiO{sub 2}: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO{sub 2} seed layer.« less

Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment.

PubMed

Valanarasu, S; Dhanasekaran, V; Chandramohan, R; Kulandaisamy, I; Sakthivelu, A; Mahalingam, T

2013-08-01

The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.

Screen-printed SnO2/CNT quasi-solid-state gel-electrolyte supercapacitor

NASA Astrophysics Data System (ADS)

Kuok, Fei-Hong; Liao, Chen-Yu; Chen, Chieh-Wen; Hao, Yu-Chuan; Yu, Ing-Song; Chen, Jian-Zhang

2017-11-01

This study investigates a quasi-solid-state gel-electrolyte supercapacitor fabricated with nanoporous SnO2/CNT nanocomposite electrodes and a polyvinyl alcohol/sulfuric acid (PVA/H2SO4) gel electrolyte. First, pastes containing SnO2 nanoparticles, CNTs, ethyl cellulose, and terpineol are screen-printed onto carbon cloth. A tube furnace is then used for calcining the SnO2/CNT electrodes on carbon cloth. After furnace-calcination, the wettability of SnO2/CNT significantly improved; furthermore, the XPS analysis shows that number of C-O bond and oxygen content significantly decrease after furnace-calcination owing to the burnout of the ethyl cellulose by the furnace calcination processes. The furnace-calcined SnO2/CNT electrodes sandwich the PVA/H2SO4 gel electrolyte to form a supercapacitor. The fabricated supercapacitor exhibits an areal capacitance of 5.61 mF cm-2 when flat and 5.68 mF cm-2 under bending with a bending radius (R) of 1.0 cm. After a 1000 cycle stability test, the capacitance retention rates of the supercapacitor are 96% and 97% when flat and under bending (R  =  1.0 cm), respectively.

Fabrication of ZnO Thin Films by Sol-Gel Spin Coating and Their UV and White-Light Emission Properties

NASA Astrophysics Data System (ADS)

Kumar, Mirgender; Dubey, Sarvesh; Rajendar, Vanga; Park, Si-Hyun

2017-10-01

ZnO thin films have been fabricated by the sol-gel spin-coating technique and annealed under different conditions, and their ultraviolet (UV) and white-light emission properties investigated. Different ambient conditions including oxygen, nitrogen, zinc-rich nitrogen, and vacuum were used to tune the main properties of the ZnO thin films. The resistivity varied from the conductive to semi-insulating regime, and the luminescence emission from fairly intense UV to polychromatic. The emission intensity was also found to be a function of the annealing conditions. Possible routes to compensate the loss of emission characteristics are discussed. X-ray photoelectron spectroscopy (XPS) analysis was carried out to detect the chemical states of the zinc/oxygen species. The changes in the electrical and emission properties are explained based on annihilation/formation of inherent donor/acceptor-type defects. Such ZnO thin films could have potential applications in solid-state lighting.

Modulation-Doped In2 O3 /ZnO Heterojunction Transistors Processed from Solution.

PubMed

Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D

2017-05-01

This paper reports the controlled growth of atomically sharp In 2 O 3 /ZnO and In 2 O 3 /Li-doped ZnO (In 2 O 3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In 2 O 3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In 2 O 3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In 2 O 3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In 2 O 3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrospinning Hetero-Nanofibers In2O3/SnO2 of Homotype Heterojunction with High Gas Sensing Activity

PubMed Central

Du, Haiying; Yao, PengJun; Sun, Yanhui; Wang, Jing; Wang, Huisheng; Yu, Naisen

2017-01-01

In2O3/SnO2 composite hetero-nanofibers were synthesized by an electrospinning technique for detecting indoor volatile organic gases. The physical and chemical properties of In2O3/SnO2 hetero-nanofibers were characterized and analyzed by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), Energy Dispersive X-Ray Spectroscopy (EDX), specific surface Brunauer–Emmett–Teller (BET) and X-ray photoelectron spectroscopy (XPS). Gas sensing properties of In2O3/SnO2 composite hetero-nanofibers were measured with six kinds of indoor volatile organic gases in concentration range of 0.5~50 ppm at the operating temperature of 275 °C. The In2O3/SnO2 composite hetero-nanofibers sensor exhibited good formaldehyde sensing properties, which would be attributed to the formation of n-n homotype heterojunction in the In2O3/SnO2 composite hetero-nanofibers. Finally, the sensing mechanism of the In2O3/SnO2 composite hetero-nanofibers was analyzed based on the energy-band principle. PMID:28792433

ZnO transparent conductive oxide for thin film silicon solar cells

NASA Astrophysics Data System (ADS)

Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

2010-03-01

There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

PubMed Central

2012-01-01

The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

SnO2/CNT nanocomposite supercapacitors fabricated using scanning atmospheric-pressure plasma jets

NASA Astrophysics Data System (ADS)

Xu, Chang-Han; Chiu, Yi-Fan; Yeh, Po-Wei; Chen, Jian-Zhang

2016-08-01

SnO2/CNT electrodes for supercapacitors are fabricated by first screen-printing pastes containing SnO2 nanoparticles and CNTs on carbon cloth, following which nitrogen atmospheric pressure plasma jet (APPJ) sintering is performed at various APPJ scan rates. The APPJ scan rates change the time intervals for which the reactive plasma species and the heat of the nitrogen APPJs influence the designated sintering spot on the carbon cloth, resulting in APPJ-sintered SnO2/CNT nanocomposites with different properties. The water contact angle decreases with the APPJ scan rate. The improved wettability can facilitate the penetration of the electrolyte into the nanopores of the SnO2/CNT nanocomposites, thereby improving the charge storage and specific capacitance of the supercapacitors. Among the three tested APPJ scan rates, 1.5, 3, and 6 mm s-1, the SnO2/CNT supercapacitor sintered by APPJ under the lowest APPJ scan rate of 1.5 mm s-1 shows the best specific capacitance of ˜90 F g-1 as evaluated by cyclic voltammetry under a potential scan rate of 2 mV s-1. A high APPJ scan rate may result in low degree of materials activation and sintering, leading to poorer performance of SnO2/CNT supercapacitors. The results suggest the feasibility of an APPJ roll-to-roll process for the fabrication of SnO2/CNT nanocomposite supercapacitors.

Heterojunction Fe2O3-SnO2 Nanostructured Photoanode for Efficient Photoelectrochemical Water Splitting

NASA Astrophysics Data System (ADS)

Han, Hyun Soo; Shin, Sun; Noh, Jun Hong; Cho, In Sun; Hong, Kug Sun

2014-04-01

Hierarchically organized nanostructures were fabricated by growing SnO2 nanoparticles on a fluorine-doped tin oxide/glass substrate via a laser ablation method. Cauliflower-like clusters consisting of agglomerated nanoparticles were deposited and aligned with respect to the substrate with a large internal surface area and open channels of pores. The morphological changes of SnO2 nanostructured films were investigated as a function of the oxygen working pressure in the range of 100-500 mTorr. A nanostructured scaffold prepared at an oxygen working pressure of 100 mTorr exhibited the best photoelectrochemical (PEC) performance. A Ti:Fe2O3-SnO2 nanostructured photoanode showed the photocurrent that was 34% larger than that of a Ti:Fe2O3 flat photoanode when the amount of Ti:Fe2O3 sensitizer was identical for the two photoanodes. The larger surface area and longer electron lifetime of the Ti:Fe2O3-SnO2 nanostructured photoanode explains its improved PEC performance.

Synthesis of TiO2 NRs - ZnO Composite for Dye Sensitized Solar Cell Photoanodes

NASA Astrophysics Data System (ADS)

Wahyuningsih, S.; Ramelan, A. H.; Hidayat, R.; Fadillah, G.; Munawaroh, H.; Saputri, L. N. M. Z.

2017-07-01

Composite of TiO2 NRs - ZnO were synthesized for DSSCs photoanode materials. TiO2 NRs was synthesized from TiO2 anatase by mechanochemical technique using ball milling process with agitation speed of 1000 rpm. While, the further hydrothermal refluxing process was conducted at 120°C under various concentration of NaOH in aqueous solution. The starting material of ZnO was prepared from ZnSO4.7H2O as a precursor. The hydrothermal treated TiO2 was added to the ZnO powder in a certain composition of 1:1, 1:2 and 2:1 (w/w), and the mixtures were then annealed at 400°C. The resulting material was characterized by X-ray diffraction (XRD), Surface area analyzer (SAA), Transmission electron microscopy (TEM), and Thermogravimetry/Differential thermal analysis (TG/DTA). The TiO2 revolution occurs from anatase phase into brookite phase. Rutile TiO2 phase was increasing when the NaOH was added at about 12 M. Nanograf of TEM showed the optimum condition for the formation of TiO2 NRs was obtained when 12 M NaOH was used. Structural transformation to 1D nanorods of TiO2 capable increase surface area up to 79 m2/g. TiO2 NRs-ZnO composite was prepared from TiO2 NRs and ZnO using comparation of TiO2 NRs: ZnO = 1:1, 1:2, dan 2:1. Anatase phase TiO2 as a single phase TiO2 was obtained in the TiO2-ZnO composite (1:1 w/w) upon heating the sample until 400°C. Difference TiO2 NRs-ZnO composite materials were investigated as good photovoltaic materials. Evaluation of the performance of DSSCs was conducted by I-V Keithley 2602A measurement indicate that photoanode built of TiO2 NRs - ZnO thin film has a higher solar cell efficiency than that of TiO2 thin film photoanode.

Li diffusion in epitaxial (11 $bar 2$ 0) ZnO thin films

NASA Astrophysics Data System (ADS)

Wu, P.; Zhong, J.; Emanetoglu, N. W.; Chen, Y.; Muthukumar, S.; Lu, Y.

2004-06-01

Zinc oxide (ZnO) possesses many interesting properties, such as a wide energy bandgap, large photoconductivity, and high excitonic binding energy. Chemical-vapor-deposition-grown ZnO films generally show n-type conductivity. A compensation doping process is needed to achieve piezoelectric ZnO, which is needed for surface acoustic wave (SAW), bulk acoustic wave, and micro-electromechanical system devices. In this work, a gas-phase diffusion process is developed to achieve piezoelectric (11bar 20) ZnO films. Comparative x-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements confirmed that high crystal quality and good surface morphology were preserved after diffusion. Photoluminescence (PL) measurements show a broad band emission with a peak wavelength at ˜580 nm, which is associated with Li doping. The SAW, including both Rayleigh-wave and Love-wave modes, is achieved along different directions in piezoelectric (11bar 20) ZnO films grown on an r-plane sapphire substrate.

SnO2 quantum dots with rapid butane detection at lower ppm-level

NASA Astrophysics Data System (ADS)

Cai, Pan; Dong, Chengjun; Jiang, Ming; Shen, Yuanyuan; Tao, You; Wang, Yude

2018-04-01

SnO2 quantum dots (QDs) were successfully synthesized by a facile approach employing benzyl alcohol and ammonium hydroxide at lower temperature of 130 °C. It is revealed that the SnO2 QDs is about 3 nm in size to form clusters. The gas sensor based on SnO2 QDs shows a high potential for detecting low-ppm-level butane at 400 °C, exhibiting a high sensitivity, short response and rapid recovery time, and effective selectivity. The sensing mechanism is understood in terms of adsorbed oxygen species. Significantly, the excellent sensing performance is attributed to the smaller size of SnO2 and larger surface area (204.85 m2/g).

Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

DOE PAGES

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...

2016-02-01

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

Synthesis, structure, vapour pressure and deposition of ZnO thin film by plasma assisted MOCVD technique using a novel precursor bis[(pentylnitrilomethylidine) (pentylnitrilomethylidine-μ-phenalato)]dizinc(II)

NASA Astrophysics Data System (ADS)

Chandrakala, C.; Sravanthi, P.; Raj Bharath, S.; Arockiasamy, S.; George Johnson, M.; Nagaraja, K. S.; Jeyaraj, B.

2017-02-01

A novel binuclear zinc schiff's base complex bis[(pentylnitrilomethylidine)(pentylnitrilomethylidine-μ-phenalato)]dizinc(II) (hereafter referred as ZSP) was prepared and used as a precursor for the deposition of ZnO thin film by MOCVD. The dynamic TG run of ZSP showed sufficient volatility and good thermal stability. The temperature dependence of vapour pressure measured by transpiration technique yielded a value of 55.8 ± 2.3 kJ mol-1 for the enthalpy of sublimation (ΔH°sub) in the temperature range of 423-503 K. The crystal structure of ZSP was solved by single crystal XRD which exhibits triclinic crystal system with the space group of Pī. The molecular mass of ZSP was determined by mass spectrometry which yielded the m/z value of 891 and 445 Da corresponding to its dimeric as well as monomeric form. The complex ZSP was further characterized by FT-IR and NMR. The demonstration of ZnO thin film deposition was carried out by using plasma assisted MOCVD. The thin film XRD confirmed the highly oriented (002) ZnO thin films on Si(100) substrate. The uniformity and composition of the thin film were analyzed by SEM/EDX. The band gap of ZnO thin film measurement indicated the blue shift with the value of 3.79 eV.

Data of chemical analysis and electrical properties of SnO2-TiO2 composite nanofibers.

PubMed

Bakr, Zinab H; Wali, Qamar; Ismail, Jamil; Elumalai, Naveen Kumar; Uddin, Ashraf; Jose, Rajan

2018-06-01

In this data article, we provide energy dispersive X-ray spectroscopy (EDX) spectra of the electrospun composite (SnO 2 -TiO 2 ) nanowires with the elemental values measured in atomic and weight%. The linear sweep voltammetry data of composite and its component nanofibers are provided. The data collected in this article is directly related to our research article "Synergistic combination of electronic and electrical properties of SnO 2 and TiO 2 in a single SnO 2 -TiO 2 composite nanowire for dye-sensitized solar cells" [1].

Highly conductive and transparent thin ZnO films prepared in situ in a low pressure system

NASA Astrophysics Data System (ADS)

Ataev, B. M.; Bagamadova, A. M.; Mamedov, V. V.; Omaev, A. K.; Rabadanov, M. R.

1999-03-01

Sucessful preparation of ZnO : M epitaxial thin films (ETF) in situ doped with donor impurity M=Ga, Sn by chemical vapor despsition in a low-pressure system is reported. Highly conductive (up to 10 -4 Ω cm) and transparent ( T>85%) ZnO : M ETF have been successfully produced on single crystal (1012) sapphire substrates. Electrical properties of the films as well as their excition luminescence were studied.

FIB-tomographic studies on chemical vapor deposition grown SnO2 nanowire arrays on TiO2 (001)

NASA Astrophysics Data System (ADS)

Chen, Haoyun; Liu, Yi; Wu, Hong; Xiong, Xiang; Pan, Jun

2016-12-01

Tin oxide nanowire arrays on titania (001) have been successfully fabricated by chemical vapor deposition of Sn(O t Bu)4 precursor. The morphologies and structures of ordered SnO2 nanowires (NWs) were analyzed by cross-sectional SEM, HR-TEM and AFM. An FIB-tomography technique was applied in order to reconstruct a 3D presentation of ordered SnO2 nanowires. The achieved 3D analysis showed the spatial orientation and angles of ordered SnO2 NWs can be obtained in a one-shot experiment, and the distribution of Au catalysts showed the competition between 1D and 2D growth. The SnO2 nanowire arrays can be potentially used as a diameter- and surface-dependent sensing unit for the detection of gas- and bio-molecules.

Photocatalytic degradation of diclofenac using TiO2-SnO2 mixed oxide catalysts.

PubMed

Mugunthan, E; Saidutta, M B; Jagadeeshbabu, P E

2017-12-26

The complex nature of diclofenac limits its biological degradation, posing a serious threat to aquatic organisms. Our present work aims to eliminate diclofenac from wastewater through photocatalytic degradation using TiO 2 -SnO 2 mixed-oxide catalysts under various operating conditions such as catalyst loading, initial diclofenac concentration and initial pH. Different molar ratios of Ti-Sn (1:1, 5:1, 10:1, 20:1 and 30:1) were prepared by the hydrothermal method and were characterized. The results indicated that addition of Sn in small quantity enhances the catalytic activity of TiO 2 . Energy Band gap of the TiO 2 -SnO 2 catalysts was found to increase with an increase in Tin content. TiO 2 -SnO 2 catalyst with a molar ratio of 20:1 was found to be the most effective when compared to other catalysts. The results suggested that initial drug concentration of 20 mg/L, catalyst loading of 0.8 g/L and pH 5 were the optimum operating conditions for complete degradation of diclofenac. Also, the TiO 2 -SnO 2 catalyst was effective in complete mineralization of diclofenac with a maximum total organic carbon removal of 90% achieved under ultraviolet irradiation. The repeatability and stability results showed that the TiO 2 -SnO 2 catalyst exhibited an excellent repeatability and better stability over the repeated reaction cycles. The photocatalytic degradation of diclofenac resulted in several photoproducts, which were identified through LC-MS.

Gas-sensing enhancement methods for hydrothermal synthesized SnO2-based sensors

NASA Astrophysics Data System (ADS)

Zhao, Yalei; Zhang, Wenlong; Yang, Bin; Liu, Jingquan; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng

2017-11-01

Gas sensing for hydrothermal synthesized SnO2-based gas sensors can be enhanced in three ways: structural improvement, composition optimization, and processing improvement. There have been zero-dimensional, one-dimensional, and three-dimensional structures reported in the literature. Controllable synthesis of different structures has been deployed to increase specific surface area. Change of composition would intensively tailor the SnO2 structure, which affected the gas-sensing performance. Furthermore, doping and compounding methods have been adopted to promote gas-sensing performance by adjusting surface conditions of SnO2 crystals and constructing heterojunctions. As for processing area, it is very important to find the optimal reaction time and temperature. In this paper, a gas-solid reaction rate constant was proposed to evaluate gas-sensing properties and find an excellent hydrothermal synthesized SnO2-based gas sensor.

Magneto-transport and magneto-optical studies on SnO2 transparent semiconducting thin films alloyed with Mn over a wide range of concentration

NASA Astrophysics Data System (ADS)

Bagheri Mohagheghi, M. M.; Tabatabai Yazdi, Sh.; Mousavi, M.

2018-03-01

In this work, Mn-alloyed tin oxide transparent thin films with different Mn concentrations up to 60 at% were prepared via the spray pyrolysis method, and their structural, magneto-optical, and magneto-transport properties were studied. The results show that all the deposited films are polycrystalline with the tetragonal rutile structure. The unit cell volume of Sn1- x Mn x O2 films was found to be minimum at the Mn concentration of x = 0.15 indicating to two different mechanisms for Mn addition in the crystal lattice of tin oxide. For the films with Mn concentrations less than 15%, substitutional doping is the working mechanism, while for more Mn concentrations, interstitial one is predominant. A critical Mn concentration about that observed for the structural properties of the films (i.e., x = 0.15) was revealed for their magnetoresistance and magneto-optical properties, as well. This suggests a correlation between the structural and magnetic behaviors of the deposited SnO2:Mn films.

Bipolar charge storage characteristics in copper and cobalt co-doped zinc oxide (ZnO) thin film.

PubMed

Kumar, Amit; Herng, Tun Seng; Zeng, Kaiyang; Ding, Jun

2012-10-24

The bipolar charge phenomenon in Cu and Co co-doped zinc oxide (ZnO) film samples has been studied using scanning probe microscopy (SPM) techniques. Those ZnO samples are made using a pulsed laser deposition (PLD) technique. It is found that the addition of Cu and Co dopants suppresses the electron density in ZnO and causes a significant change in the work function (Fermi level) value of the ZnO film; this results in the ohmic nature of the contact between the electrode (probe tip) and codoped sample, whereas this contact exhibits a Schottky nature in the undoped and single-element-doped samples. These results are verified by Kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) measurements. It is also found that the co-doping (Cu and Co) can stabilize the bipolar charge, whereas Cu doping only stabilizes the positive charge in ZnO thin films.

Preparation of Ru-doped SnO2-supported Pt catalysts and their electrocatalytic properties for methanol oxidation.

PubMed

Pang, H L; Zhang, X H; Zhong, X X; Liu, B; Wei, X G; Kuang, Y F; Chen, J H

2008-03-01

Ru-doped SnO2 nanoparticles were prepared by chemical precipitation and calcinations at 823 K. Due to high stability in diluted acidic solution, Ru-doped SnO2 nanoparticles were selected as the catalyst support and second catalyst for methanol electrooxidation. The micrograph, elemental composition, and structure of the Ru-doped SnO2 nanoparticles were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction, respectively. The electrocatalytic properties of the Ru-doped SnO2-supported Pt catalyst (Pt/Ru-doped SnO2) for methanol oxidation have been investigated by cyclic voltammetry. Under the same loading mass of Pt, the Pt/Ru-doped SnO2 catalyst shows better electrocatalytic performance than the Pt/SnO2 catalyst and the best atomic ratio of Ru to Sn in Ru-doped SnO2 is 1/75. Additionally, the Pt/Ru-doped SnO2 catalyst possesses good long-term cycle stability.

Characterization and properties of TiO2-SnO2 nanocomposites, obtained by hydrolysis method

NASA Astrophysics Data System (ADS)

Kutuzova, Anastasiya S.; Dontsova, Tetiana A.

2018-04-01

The paper deals with the process of TiO2-SnO2 nanocomposites synthesis utilizing simple hydrolysis method with further calcination for photocatalytic applications. The obtained nanopowders contain 100, 90, 75, 65 and 25 wt% of TiO2. The synthesized nanocomposite samples were analyzed by X-ray diffraction method, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and N2 adsorption-desorption method. The correlation between structure and morphology of the obtained nanocrystalline composite powders and their sorption and photocatalytic activity towards methylene blue degradation was established. It was found that the presence of SnO2 in the nanocomposites stabilizes the anatase phase of TiO2. Furthermore, sorption and photocatalytic properties of the obtained composites are significantly influenced not only by specific surface area, but also by pore size distribution and mesopore volume of the samples. In our opinion, the results obtained in this study have shown that the TiO2-SnO2 composites with SnO2 content that does not exceed 10% are promising for photocatalytic applications.

Effets de l'interaction avec l'oxygène sur le comportement de couches semi-conductrices de ZnO, SnO{2} et CdSe

NASA Astrophysics Data System (ADS)

Ain-Souya, A.; Ghers, M.; Haddad, A.; Tebib, W.; Rehamnia, R.; Messsalhi, A.; Bounouala, M.; Djouama, M. C.

2005-05-01

Les propriétés superficielles des matériaux solides diffèrent de celles du volume. A la surface, des défauts de différentes natures peuvent être présents. Ils permettent à la surface d'être interactive avec le milieu ambiant. Les multiples interactions entre les états de surface et des éléments du milieu extérieur peuvent modifier les propriétés superficielles. Ce travail étudie la régénération de couches semi-conductrices après adsorption isotherme d'oxygène à différentes températures effectuées entre 20 ° C et 300 ° C. Les matériaux qui ont servi à l'étude sont des couches de ZnO, SnO{2} et CdSe. Celles de CdSe ont été obtenues par co-évaporation, sous vide, de cadmium et de sélénium. Les échantillons de ZnO et SnO{2} ont été élaborés par oxydation, à des températures respectives de 450 ° C et 200 ° , de Zn et Sn déposés par électrolyse et par évaporation sous vide. Les matériaux évaporés ont été déposés sur des plaquettes en verre, les autres ont été électrodéposés sur des substrats métalliques. Les variations des propriétés électriques des couches ont été suivies par mesure de leur résistance électrique superficielle R. Les courbes LogR = f (103 /T (K)), relevées sous vide à différentes températures, sont caractéristiques d'un comportement de semi-conducteur. Des essais d'adsorption d'O{2} à différentes températures montrent des variations considérables de R. En effet, la chimisorption forte d'un gaz par une surface semi-conductrice est telle que l'échange électronique entre adsorbant et adsorbat provoque la formation d'une zone de charge d'espace modifiant la conduction superficielle. Les résultats mettent en évidence des domaines de température de plus haute sensibilité à l'oxygène. Pour le CdSe, certaines désorptions isothermes ont été suffisantes pour une régénération totale des échantillons. Les couches de ZnO ont souvent nécessité des désorptions programm

Visible and UV photo-detection in ZnO nanostructured thin films via simple tuning of solution method.

PubMed

Khokhra, Richa; Bharti, Bandna; Lee, Heung-No; Kumar, Rajesh

2017-11-08

This study demonstrates significant visible light photo-detection capability of pristine ZnO nanostructure thin films possessing substantially high percentage of oxygen vacancies [Formula: see text] and zinc interstitials [Formula: see text], introduced by simple tuning of economical solution method. The demonstrated visible light photo-detection capability, in addition to the inherent UV light detection ability of ZnO, shows great dependency of [Formula: see text] and [Formula: see text] with the nanostructure morphology. The dependency was evaluated by analyzing the presence/percentage of [Formula: see text] and [Formula: see text] using photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) measurements. Morphologies of ZnO viz. nanoparticles (NPs), nanosheets (NSs) and nanoflowers (NFs), as a result of tuning of synthesis method contended different concentrations of defects, demonstrated different photo-detection capabilities in the form of a thin film photodetector. The photo-detection capability was investigated under different light excitations (UV; 380~420 nm, white ; λ > 420 nm and green; 490~570 nm). The as fabricated NSs photodetector possessing comparatively intermediate percentage of [Formula: see text] ~ 47.7% and [Formula: see text] ~ 13.8% exhibited superior performance than that of NPs and NFs photodetectors, and ever reported photodetectors fabricated by using pristine ZnO nanostructures in thin film architecture. The adopted low cost and simplest approach makes the pristine ZnO-NSs applicable for wide-wavelength applications in optoelectronic devices.

Fabrication of thin ZnO films with wide-range tuned optical properties by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Davydova, A.; Tselikov, G.; Dilone, D.; Rao, K. V.; Kabashin, A. V.; Belova, L.

2018-02-01

We report the manufacturing of thin zinc oxide films by reactive magnetron sputtering at room temperature, and examine their structural and optical properties. We show that the partial oxygen pressure in DC mode can have dramatic effect on absorption and refractive index (RI) of the films in a broad spectral range. In particular, the change of the oxygen pressure from 7% to 5% can lead to either conventional crystalline ZnO films having low absorption and characteristic descending dependence of RI from 2.4-2.7 RIU in the visible to 1.8-2 RIU in the near-infrared (1600 nm) range, or to untypical films, composed of ZnO nano-crystals embedded into amorphous matrix, exhibiting unexpectedly high absorption in the visible-infrared region and ascending dependence of RI with values varying from 1.5 RIU in the visible to 4 RIU in the IR (1600 nm), respectively. Untypical optical characteristics in the second case are explained by defects in ZnO structure arising due to under-oxidation of ZnO crystals. We also show that the observed defect-related film structure remains stable even after annealing of films under relatively high temperatures (30 min under 450 °C). We assume that both types of films can be of importance for photovoltaic (as contact or active layers, respectively), as well as for chemical or biological sensing, optoelectronics etc.

Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

PubMed

Singh, Shaivalini; Chakrabarti, P

2012-03-01

We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

Analysis of stability improvement in ZnO thin film transistor with dual-gate structure under negative bias stress

NASA Astrophysics Data System (ADS)

Yun, Ho-Jin; Kim, Young-Su; Jeong, Kwang-Seok; Kim, Yu-Mi; Yang, Seung-dong; Lee, Hi-Deok; Lee, Ga-Won

2014-01-01

In this study, we fabricated dual-gate zinc oxide thin film transistors (ZnO TFTs) without additional processes and analyzed their stability characteristics under a negative gate bias stress (NBS) by comparison with conventional bottom-gate structures. The dual-gate device shows superior electrical parameters, such as subthreshold swing (SS) and on/off current ratio. NBS of VGS = -20 V with VDS = 0 was applied, resulting in a negative threshold voltage (Vth) shift. After applying stress for 1000 s, the Vth shift is 0.60 V in a dual-gate ZnO TFT, while the Vth shift is 2.52 V in a bottom-gate ZnO TFT. The stress immunity of the dual-gate device is caused by the change in field distribution in the ZnO channel by adding another gate as the technology computer aided design (TCAD) simulation shows. Additionally, in flicker noise analysis, a lower noise level with a different mechanism is observed in the dual-gate structure. This can be explained by the top side of the ZnO film having a larger crystal and fewer grain boundaries than the bottom side, which is revealed by the enhanced SS and XRD results. Therefore, the improved stability of the dual-gate ZnO TFT is greatly related to the E-field cancellation effect and crystal quality of the ZnO film.

Exciton and core-level electron confinement effects in transparent ZnO thin films

PubMed Central

Mosquera, Adolfo A.; Horwat, David; Rashkovskiy, Alexandr; Kovalev, Anatoly; Miska, Patrice; Wainstein, Dmitry; Albella, Jose M.; Endrino, Jose L.

2013-01-01

The excitonic light emission of ZnO films have been investigated by means of photoluminescence measurements in ultraviolet-visible region. Exciton confinement effects have been observed in thin ZnO coatings with thickness below 20 nm. This is enhanced by a rise of the intensity and a blue shift of the photoluminescence peak after extraction of the adsorbed species upon annealing in air. It is found experimentally that the free exciton energy (determined by the photoluminescence peak) is inversely proportional to the square of the thickness while core-level binding energy is inversely proportional to the thickness. These findings correlate very well with the theory of kinetic and potential confinements.

Influence of annealing to the defect of inkjet-printed ZnO thin film

NASA Astrophysics Data System (ADS)

Tran, Van-Thai; Wei, Yuefan; Zhan, Zhaoyao; Du, Hejun

2018-03-01

The advantages of additive manufacturing for electronic devices have led to the demand of printing functional material in search of a replacement for the conventional subtractive fabrication process. Zinc oxide (ZnO), thanks to its interesting properties for the electronic and photonic applications, has gathered many attentions in the effort to fabricate functional devices additively. Although many potential methods have been proposed, most of them focus on the lowtemperature processing of the printed material to be compatible with the polymer substrate. These low-temperature fabrication processes could establish a high concentration of defects in printed ZnO which significantly affect the performance of the device. In this study, ZnO thin film for UV photodetector application was prepared by inkjet printing of zinc acetate dihydrate solution following by different heat treatment schemes. The effects of annealing to the intrinsic defect of printed ZnO and photoresponse characteristics under UV illumination were investigated. A longer response/decay time and higher photocurrent were observed after the annealing at 350°C for 30 minutes. X-ray photoelectron spectroscopy (XPS) analysis suggests that the reducing of defect concentration, such as oxygen vacancy, and excess oxygen species in printed ZnO is the main mechanism for the variation in photoresponse. The result provides a better understanding on the defect of inkjet-printed ZnO and could be applied in engineering the properties of the printed oxide-based semiconductor.

Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

NASA Astrophysics Data System (ADS)

Ali, H. M.; Abd El-Ghanny, H. A.

2008-04-01

Thin films of (CdSe)90(In2O3)10, (CdSe)90(SnO2)10 and (CdSe)90(ZnO)10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps Eg and Eg+Δ due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

Fabrication of textured SnO2 transparent conductive films using self-assembled Sn nanospheres

NASA Astrophysics Data System (ADS)

Fukumoto, Michitaka; Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

2018-06-01

We present a novel method to fabricate textured surfaces on transparent conductive SnO2 films by processing substrates through a bottom-up technique with potential for industrially scalable production. The substrate processing consists of three steps: deposition of precursor Sn films on glass substrates, formation of a self-assembled Sn nanosphere layer with reductive annealing, and conversion of Sn to SnO2 by oxidative annealing. Ta-doped SnO2 films conformally deposited on the self-assembled nanospherical SnO2 templates exhibited attractive optical and electrical properties, namely, enhanced haze values and low sheet resistances, for applications as transparent electrodes in photovoltaics.

SnO2@C@VO2 Composite Hollow Nanospheres as an Anode Material for Lithium-Ion Batteries.

PubMed

Guo, Wenbin; Wang, Yong; Li, Qingyuan; Wang, Dongxia; Zhang, Fanchao; Yang, Yiqing; Yu, Yang

2018-05-02

Porous SnO 2 @C@VO 2 composite hollow nanospheres were ingeniously constructed through the combination of layer-by-layer deposition and redox reaction. Moreover, to optimize the electrochemical properties, SnO 2 @C@VO 2 composite hollow nanospheres with different contents of the external VO 2 were also studied. On the one hand, the elastic and conductive carbon as interlayer in the SnO 2 @C@VO 2 composite can not only buffer the huge volume variation during repetitive cycling but also effectively improve electronic conductivity and enhance the utilizing rate of SnO 2 and VO 2 with high theoretical capacity. On the other hand, hollow nanostructures of the composite can be consolidated by the multilayered nanocomponents, resulting in outstanding cyclic stability. In virtue of the above synergetic contribution from individual components, SnO 2 @C@VO 2 composite hollow nanospheres exhibit a large initial discharge capacity (1305.6 mAhg -1 ) and outstanding cyclic stability (765.1 mAhg -1 after 100 cycles). This design of composite hollow nanospheres may be extended to the synthesis of other nanomaterials for electrochemical energy storage.

Structural studies of ZnO nanostructures by varying the deposition parameters

NASA Astrophysics Data System (ADS)

Yunus, S. H. A.; Sahdan, M. Z.; Ichimura, M.; Supee, A.; Rahim, S.

2017-01-01

The effect of Zinc Oxide (ZnO) thin film on the growth of ZnO nanorods (NRs) was investigated. The structures of ZnO NRs were synthesized by chemical bath deposition (CBD) method in aqueous solution of N2O6Zn.6H2O and C6H12N4 at 90°C of deposition temperature. One of the ZnO NRs samples was deposited on a ZnO seed layer coated on a glass substrate to investigate the properties of ZnO NRs without receiving effect of other materials. Next, for diode application, the ZnO NRs was deposited on tin monosulfide (SnS) coated on indium-tin-oxide (ITO) coated glass substrate (SnS/ITO). The next, the ZnO structural properties were studied from surface morphology, X-ray diffractometer (XRD) spectra, and chemical composition by using field emission scanning electron microscope (FESEM), XRD and energy dispersive X-ray Spectroscopy (EDX). The growth of ZnO NRs on ZnO seed layer was investigated by ZnO seed layer condition while the growth of ZnO NRs on SnS/ITO was investigated by deposition time and deposition temperature parameters. From FESEM images, aligned ZnO NRs were obtained, and the diameters of ZnO NRs were 0.024-3.94 µm. The SnS thin film was affected by the diameter of ZnO NRs which are the ZnO NRs grow on SnS thin films has a larger diameter compared to ZnO NRs grow on ZnO seed layer. Besides that, all of ZnO peaks observed from XRD corresponding to the wurzite structure and preferentially oriented along the c-axis. In addition, EDX shows a high composition of zinc (Zn) and oxygen (O) signals, which indicated that the NRs are indeed made up of Zn and O.

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hung, S.T.; Chung, Chi-Jung; Chen, Chin Ching

2012-01-01

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-04-01

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

The electrical, elemental, optical, and surface properties of Si-doped ZnO thin films prepared by thermionic vacuum arc

NASA Astrophysics Data System (ADS)

Mohammadigharehbagh, Reza; Özen, Soner; Yudar, Hafizittin Hakan; Pat, Suat; Korkmaz, Şadan

2017-09-01

The purpose of this work is to study the properties of Si-doped ZnO (SZO) thin films, which were prepared using the non-reactive thermionic vacuum arc technique. The analysis of the elemental, optical, and surface properties of ZnO:Si thin films was carried out using energy dispersive x-ray spectroscopy, UV-VIS spectrophotometry, atomic force microscopy, and scanning electron microscopy, respectively. The current-voltage measurement was employed in order to study the electrical properties of the films. The effect of Si doping on the physical properties of ZnO films was investigated. The film thicknesses were measured as 55 and 35 nm for glass and PET substrates, respectively. It was clearly observed from the x-ray diffraction results that the Si and ZnO peaks were present in the coated SZO films for all samples. The morphological studies showed that the deposited surfaces are homogenous, dense, and have a uniform surface, with the existence of some cracks only on the glass substrate. The elemental composition has confirmed the existence of Zn, Si, and O elements within the prepared films. Using a UV-VIS spectrophotometer, the optical parameters such as transmittance, absorbance, refractive index, and reflectance were calculated. It should be noted that the transparency and refractive indices obtained from the measurements decrease with increasing Si concentration. The obtained optical bandgap values using transmittance spectra were determined to be 3.74 and 3.84 eV for the glass and PET substrates, respectively. An increase in the bandgap results demonstrates that the Si doping concentration is comparable to the pure ZnO thin films. The current versus voltage curves revealed the ohmic nature of the films. Subsequently, the development and fabrication of excellent transparent conducting electrodes enabled the appropriate use of Si-doped ZnO thin films.

An investigation on the In doping of ZnO thin films by spray pyrolysis

NASA Astrophysics Data System (ADS)

Mahesh, Devika; Kumar, M. C. Santhosh

2018-04-01

Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

NASA Astrophysics Data System (ADS)

Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

2018-04-01

We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

Magnetically Separable Fe3O4/SnO2/Graphene Adsorbent for Waste Water Removal

NASA Astrophysics Data System (ADS)

Paramarta, V.; Taufik, A.; Saleh, R.

2017-05-01

Our previous study conducted the SnO2 and SnO2/graphene adsorption efficiency in Methylene Blue removal from aqueous solution, however, the difficulty of adsorbent separation from the methylene blue solution limits its efficiency. Therefore, in this work, SnO2 and SnO2/graphene was combined with Fe3O4 to improve the separation process and adsorption performance for removing the organic dyes. Fe3O4/SnO2/grapheme were synthesized by using the co-precipitation method. The graphene content was varied from 1, 3, and 5 weight percent (wt%). The crystalline phase and thermal stability of the samples were characterized by using X- ray Diffraction (XRD) and Thermal Gravimetric Analysis (TGA). The adsorption ability of the samples was investigated by using significant adsorption degradation of MB observed when the graphene in Fe3O4/SnO2 nanocomposite was added. The other parameters such as pH and initial concentration have also been investigated. The reusability was also investigated to study the stability of the samples. The fitting of equilibrium adsorption capacity result indicates that the adsorption mechanism of Fe3O4/SnO2 nanocomposite with graphene tends to follow the Langmuir adsorption isotherm model.

Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

2018-05-01

Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

High-mobility low-temperature ZnO transistors with low-voltage operation

NASA Astrophysics Data System (ADS)

Bong, Hyojin; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Beom Joon; Cho, Jeong Ho; Cho, Kilwon

2010-05-01

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm2/V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-10-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

Growth of thin film containing high density ZnO nanorods with low temperature calcinated seed layer

NASA Astrophysics Data System (ADS)

Panda, Rudrashish; Samal, Rudranarayan; Khatua, Lizina; Das, Susanta Kumar

2018-05-01

In this work we demonstrate the growth of thin film containing high density ZnO nanorods by using drop casting of the seed layer calcinated at a low temperature of 132 °C. Chemical bath deposition (CBD) method is used to grow the nanorods. X-ray diffraction (XRD) analysis and Field Emission Scanning Electron Microscopy (FESEM) are performed for the structural and morphological characterizations of the nanorods. The average diameter and length of nanorods are found to be 33 nm and 270 nm respectively. The bandgap of the material is estimated to be 3.2 eV from the UV-Visible absorption spectroscopy. The reported method is much more cost-effective and can be used for growth of ZnO nanorods for various applications.

Study on preparation of SnO2-TiO2/Nano-graphite composite anode and electro-catalytic degradation of ceftriaxone sodium.

PubMed

Guo, Xiaolei; Wan, Jiafeng; Yu, Xiujuan; Lin, Yuhui

2016-12-01

In order to improve the electro-catalytic activity and catalytic reaction rate of graphite-like material, Tin dioxide-Titanium dioxide/Nano-graphite (SnO 2 -TiO 2 /Nano-G) composite was synthesized by a sol-gel method and SnO 2 -TiO 2 /Nano-G electrode was prepared in hot-press approach. The composite was characterized by X-ray photoelectron spectroscopy, fourier transform infrared, Raman, N 2 adsorption-desorption, scanning electrons microscopy, transmission electron microscopy and X-ray diffraction. The electrochemical performance of the SnO 2 -TiO 2 /Nano-G anode electrode was investigated via cyclic voltammetry and electrochemical impedance spectroscopy. The electro-catalytic performance was evaluated by the degradation of ceftriaxone sodium and the yield of ·OH radicals in the reaction system. The results demonstrated that TiO 2 , SnO 2 and Nano-G were composited successfully, and TiO 2 and SnO 2 particles dispersed on the surface and interlamination of the Nano-G uniformly. The specific surface area of SnO 2 modified anode was higher than that of TiO 2 /Nano-G anode and the degradation rate of ceftriaxone sodium within 120 min on SnO 2 -TiO 2 /Nano-G electrode was 98.7% at applied bias of 2.0 V. The highly efficient electro-chemical property of SnO 2 -TiO 2 /Nano-G electrode was attributed to the admirable conductive property of the Nano-G and SnO 2 -TiO 2 /Nano-G electrode. Moreover, the contribution of reactive species ·OH was detected, indicating the considerable electro-catalytic activity of SnO 2 -TiO 2 /Nano-G electrode. Copyright © 2016 Elsevier Ltd. All rights reserved.

High-pressure phases transitions in SnO2 to 117 GPa: Implications for silica

NASA Astrophysics Data System (ADS)

Shieh, S. R.; Kubo, A.; Duffy, T. S.; Prakapenka, V. B.; Shen, G.

2005-12-01

Cassiterite (SnO2) is regarded to be a good analog material for silica as both SnO2 and SiO2 are group IV-B metal dioxides. The high-pressure behavior of SnO2 has been the subject of many previous investigations extending up to 49 GPa and in addition to the rutile structure, three high-pressure phases, CaCl2-type, α-PbO2-type, and pyrite-type were observed. Better knowledge of high-pressure phases of SnO2 will be useful to understand the behavior of silica at deep mantle conditions. In addition, high-pressure metal dioxide phases may qualify as superhard solids. Our study will also provide insights into interpretation of shock compression data. Pure natural cassiterite (SnO2) powder was compressed in a diamond anvil cell using an argon medium. Pressure was determined from the equation of state of platinum. In situ monochromatic x-ray diffraction at high pressure was carried out at the GSECARS, Advanced Photon Source. High temperatures were achieved using double-sided laser heating . Three heating cycles were conducted with total heating times up to 30 minutes. Our diffraction results on SnO2 demonstrate the existence of four phase transitions to 117 GPa. The observed sequence of high-pressure phases for SnO2 is rutile-type, CaCl2-type, pyrite-type, ZrO2 orthorhombic phase I (Pbca), cotunnite-type. Our observations of the first three phases are generally in agreement with earlier studies. The orthorhombic phase I and cotunnite-type structures were observed in SnO2 for the first time. The Pbca phase is found at 50-74 GPa during room-temperature compression. The cotunnite-type structure was synthesized when SnO2 was heated at 74 GPa and 1200 K. The cotunnite-type form was observed during compression between 54-117 GPa. Fitting the pressure-volume data for the high-pressure phases to the second-order Birch-Murnaghan equation of state yields a bulk modulus of 259(26) GPa for the Pbca phase and 417(7) GPa for the cotunnite-type phase. Rietveld profile refinements were

Improved efficiency of ZnO hierarchical particle based dye sensitized solar cell by incorporating thin passivation layer in photo-anode

NASA Astrophysics Data System (ADS)

Das, Priyanka; Mondal, Biswanath; Mukherjee, Kalisadhan

2018-01-01

Present article describes the DSSC performances of photo-anodes prepared using hydrothermal route derived ZnO particles having dissimilar morphologies i.e. simple micro-rod and nano-tips decorated micro-rod. The surface of nano-tips decorated micro-rod is uneven and patterned which facilitate more dye adsorption and better scattering of the incident light resulting superior photo-conversion efficiency (PCE) ( η 1.09%) than micro-rod ZnO ( η 0.86%). To further improve the efficiency of nano-tips decorated micro-rod ZnO based DSSC, thin passivation layer of ZnO is introduced in the corresponding photo-anode and a higher PCE ( η 1.29%) is achieved. The compact thin passivation layer here expedites the transportation of photo-excited electrons, restricts the undesired recombination reactions and prevents the direct contact of electrolyte with conducting substrates. Attempt is made to understand the effect of passivation layer on the transportation kinetics of photo-excited electrons by analyzing the electrochemical impedance spectra of the developed cells.

In situ synthesized SnO2 nanorod/reduced graphene oxide low-dimensional structure for enhanced lithium storage

NASA Astrophysics Data System (ADS)

Zhang, Wei; Xiao, Xuezhang; Zhang, Yiwen; Li, Junpeng; Zhong, Jiayi; Li, Meng; Fan, Xiulin; Wang, Chuntao; Chen, Lixin

2018-03-01

A unique SnO2 nanorod (NR)/reduced graphene oxide (RGO) composite morphology has been synthesized using the in situ hydrothermal method, for use as an anode material in lithium-ion batteries. The SnO2 NR adhering to the RGO exhibits a length of 250-400 nm and a diameter of 60-80 nm without any obvious aggregation. The initial discharge/charge capacities of the SnO2 NR/RGO composite are 1761.3 mAh g-1 and 1233.1 mAh g-1, with a coulombic efficiency (CE) of 70% under a current density of 200 mA g-1, and a final capacity of 1101 mAh g-1 after 50 cycles. The rate capability of the SnO2 NR/RGO is also improved compared to that of bare SnO2 NR. The superior electrochemical performance is ascribed to the special morphology of the SnO2 NRs—which plays a role in shorting the transmission path—and the sheet-like 2D graphene, which prevents the agglomeration of SnO2 and enhances conductivity during the electrochemical reaction of SnO2 NR/RGO.

Thickness effects on the texture development of fluorine-doped SnO2 thin films: The role of surface and strain energy

NASA Astrophysics Data System (ADS)

Consonni, V.; Rey, G.; Roussel, H.; Bellet, D.

2012-02-01

Polycrystalline fluorine-doped SnO2 thin films have been grown by ultrasonic spray pyrolysis with a thickness varying in the range of 40 to 600 nm. A texture transition from ⟨110⟩ to ⟨100⟩ and ⟨301⟩ crystallographic orientations has experimentally been shown by x-ray diffraction measurements as film thickness is increased, showing that a process of abnormal grain growth has occurred. The texture effects are considered within a thermodynamic approach, in which the minimization of total free energy constitutes the driving force for grain growth. For very small film thickness, it is found that the ⟨110⟩ preferred orientation is due to surface energy minimization, as the (110) planes have the lowest surface energy in the rutile structure. In contrast, as film thickness is increased, the ⟨100⟩ and ⟨301⟩ crystallographic orientations are progressively predominant, owing to elastic strain energy minimization in which the anisotropic character is considered in the elastic biaxial modulus. A texture map is eventually determined, revealing the expected texture as a function of elastic strain and film thickness.

Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

PubMed

Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

2017-01-01

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

Chip-to-chip SnO2 nanowire network sensors for room temperature H2 detection

NASA Astrophysics Data System (ADS)

Köck, A.; Brunet, E.; Mutinati, G. C.; Maier, T.; Steinhauer, S.

2012-06-01

The employment of nanowires is a very powerful strategy to improve gas sensor performance. We demonstrate a gas sensor device, which is based on silicon chip-to-chip synthesis of ultralong tin oxide (SnO2) nanowires. The sensor device employs an interconnected SnO2 nanowire network configuration, which exhibits a huge surface-to-volume ratio and provides full access of the target gas to the nanowires. The chip-to-chip SnO2 nanowire device is able to detect a H2 concentration of only 20 ppm in synthetic air with ~ 60% relative humidity at room temperature. At an operating temperature of 300°C a concentration of 50 ppm H2 results in a sensitivity of 5%. At this elevated temperature the sensor shows a linear response in a concentration range between 10 ppm and 100 ppm H2. The SnO2-nanowire fabrication procedure based on spray pyrolysis and subsequent annealing is performed at atmospheric pressure, requires no vacuum and allows upscale of the substrate to a wafer size. 3D-integration with CMOS chips is proposed as viable way for practical realization of smart nanowire based gas sensor devices for the consumer market.

Metal to insulator transition in Sb doped SnO2 monocrystalline nanowires thin films

NASA Astrophysics Data System (ADS)

Costa, I. M.; Bernardo, E. P.; Marangoni, B. S.; Leite, E. R.; Chiquito, A. J.

2016-12-01

We report on the growth and transport properties of single crystalline Sb doped SnO2 wires grown from chemical vapour deposition. While undoped samples presented semiconducting behaviour, doped ones clearly undergo a transition from an insulating state ( d R /d T <0 ) to a metallic one ( d R /d T >0 ) around 130 -150 K depending on the doping level. Data analysis in the framework of the metal-to-insulator transition theories allowed us to investigate the underlying physics: electron-electron and electron-phonon interactions were identified as the scattering mechanisms present in the metallic phase, while the conduction mechanism of the semiconducting phase (undoped sample) was characterized by thermal activation and variable range hopping mechanisms.

Facile fabrication of hollow mesosphere of crystalline SnO2 nanoparticles and synthesis of SnO2@SWCNTs@Reduced Graphene Oxide nanocomposite as efficient Pt-Free counter electrode for dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Khan, Muhammad Wasim; Yao, Jixin; Zhang, Kang; Zuo, Xueqin; Yang, Qun; Tang, Huaibao; Ur Rehman, Khalid Mehmood; Li, Guang; Wu, Mingzai; Zhu, Kerong; Zhang, Haijun

2018-06-01

In this research, SnO2@SWCNTs@Reduced Graphene Oxide based nanocomposite was synthesized by a one step hydrothermal method and reported new cost effective platinum-free counter-electrodes (CEs) in dye-sensitized solar cells (DSSCs). The CEs were formed by using the nanocomposites with the help of a pipette using a doctor-blade technique. The efficiency of this nanocomposite revealed significant elctrocatalytic properties upon falling the triiodide, possessing to synergistic effect of SnO2 nano particles and improved conductivity when SWCNTs dispersed on graphene sheet. Therefore, the power conversion efficiency (PCE) of prepared SnO2@SWCNTs@RGO nanocomposite CE attained of (6.1%) in DSSCs which is equivalent to the value (6.2%) which attained to the value (6.2%) with pure Pt CE as a reference. SnO2@SWCNTs@RGO nanocomposite CEs give more stable catalytic activities for triiodide reduction than SnO2 and SWCNTs CEs in the cyclic voltammetry (CV) analysis. Furthermore, to the subsistence of graphene oxide, the nanocomposite acquired both higher stability and efficiency in the nanocomposite.

Highly Efficient Gas Sensor Using a Hollow SnO2 Microfiber for Triethylamine Detection.

PubMed

Zou, Yihui; Chen, Shuai; Sun, Jin; Liu, Jingquan; Che, Yanke; Liu, Xianghong; Zhang, Jun; Yang, Dongjiang

2017-07-28

Triethylamine (TEA) gas sensors having excellent response and selectivity are in great demand to monitor the real environment. In this work, we have successfully prepared a hollow SnO 2 microfiber by a unique sustainable biomass conversion strategy and shown that the microfiber can be used in a high-performance gas sensor. The sensor based on the hollow SnO 2 microfiber shows a quick response/recovery toward triethylamine. The response of the hollow SnO 2 microfiber is up to 49.5 when the concentration of TEA gas is 100 ppm. The limit of detection is as low as 2 ppm. Furthermore, the sensor has a relatively low optimal operation temperature of 270 °C, which is lower than those of many other reported sensors. The excellent sensing properties are largely attributed to the high sensitivity provided by SnO 2 and the good permeability and conductivity of the one-dimensional hollow structure. Thus, the hollow SnO 2 microfiber using sustainable biomass as a template is a significant strategy for a unique TEA gas sensor.

Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

NASA Astrophysics Data System (ADS)

Rahal, Hassiba; Kihal, Rafiaa; Affoune, Abed Mohamed; Ghers, Mokhtar; Djazi, Faycal

2017-06-01

Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 °C. The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at -0.60 V vs. SCE and characterized by XRD, SEM, FTIR, optical, photoelectrochemical and electrical measurements. Thickness of the deposited film was measured to be 357 nm. X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along (002) plane. FTIR results confirmed the presence of ZnO films at peak 558 cm-1. SEM images showed uniform, compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape. Optical properties of ZnO reveal a high optical transmission (> 80 % ) and high absorption coefficient (α > {10}5 {{cm}}-1) in visible region. The optical energy band gap was found to be 3.28 eV. Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction. Electrical properties of ZnO films showed a low electrical resistivity of 6.54 {{Ω }}\\cdot {cm}, carrier concentration of -1.3× {10}17 {{cm}}-3 and mobility of 7.35 cm2 V-1 s-1. Project supported by the Algerian Ministry of Higher Education and Scientific Research, Algeria (No. J0101520090018).

The Phase Relations in the In 2O 3-Al 2ZnO 4-ZnO System at 1350°C

NASA Astrophysics Data System (ADS)

Nakamura, Masaki; Kimizuka, Noboru; Mohri, Takahiko; Isobe, Mitsumasa

1993-08-01

Phase relations in the In 2O 3-Al 2ZnO 4-ZnO system at 1350°C are determined by a classical quenching method. This system consists of In 2O 3, Al 2ZnO 4, ZnO, and homologous phases InAlO 3(ZnO) m ( m = 2, 3, …) having solid solutions with LuFeO 3(ZnO) m-type crystal structures. These solid solution ranges are as follows: In 1+ x1Al 1- x1O 3(ZnO) 2 ( x1 = 0.70)-In 1+ x2Al 1- x2O 3(ZnO) 2 ( x2 = 0.316-0.320), In 2O 3(ZnO) 3-In 1+ xAl 1- xO 3(ZnO) 3 ( x = 0.230), In 2O 3(ZnO) 4-In 1+ xAl 1- xO 3(ZnO) 4 ( x = 0.15-0.16), In 2O 3(ZnO) 5-In 1+ xAl 1- xO 3(ZnO) 5 ( x = 0.116-0.130), In 2O 3(ZnO) 6-In 1+ xAl 1- xO 3(ZnO) 6 ( x = 0.000-0.111), In 2O 3(ZnO) 7-In 1+ xAl 1- xO 3(ZnO) 7 ( x = 0.08), In 2O 3(ZnO) 8-In 1+ xAl 1- xO 3(ZnO) 8 ( x: undetermined), and In 2O 3(ZnO) m-InAlO 3(ZnO) m ( m = 9, 10, 11, 13, 15, 17, and 19). The space groups of these homologous phases belong to R3¯ m for m = odd or P6 3/ mmc for m = even. Their crystal structures, In 1+ xAl 1- xO 3(ZnO) m (0 < x < 1), consist of three kinds of layers: an InO 1.5 layer, an (In xAl 1- xZn)O 2.5 layer, and ZnO layers. A comparison of the phase relations in the In 2O 3- M2ZnO 4-ZnO systems ( M = Fe, Ga, or Al) is made and their characteristic features are discussed in terms of the ionic radii and site preferences of the M cations.

Cd-doped ZnO nano crystalline thin films prepared at 723K by spray pyrolysis

NASA Astrophysics Data System (ADS)

Joishy, Sumanth; Rajendra B., V.

2018-04-01

Ternary Zn1-xCdxO(x=0.10, 0.40, 0.70 at.%) thin films of 0.025M precursor concentration have been successfully deposited on preheated (723K) glass substrates using spray pyrolysis route. The structure, morphology and optical properties of deposited films have been characterized by X-ray diffraction, Scanning Electron Microscopy (SEM) and UV-Visible spectrophotometry. X-ray diffraction study shows that the prepared films are polycrystalline in nature. 10% Cd doped ZnO film belongs to the hexagonal wurtzite system and 70% Cd doped ZnO film belongs to the cubic system, although mixed phases were formed for 40% Cd doped ZnO film. The optical transmittance spectra has shown red shift with increasing cadmium content. Optical energy band gap has been reduced with cadmium dopant.

Carbon-coated SnO2 nanotubes: template-engaged synthesis and their application in lithium-ion batteries

NASA Astrophysics Data System (ADS)

Wu, Ping; Du, Ning; Zhang, Hui; Yu, Jingxue; Qi, Yue; Yang, Deren

2011-02-01

This paper reports the synthesis of carbon-coated SnO2 (SnO2-C) nanotubes through a simple glucose hydrothermal and subsequent carbonization approach by using Sn nanorods as sacrificial templates. The as-synthesized SnO2-C nanotubes have been applied as anode materials for lithium-ion batteries, which exhibit improved cyclic performance compared to pure SnO2 nanotubes. The hollow nanostructure, together with the carbon matrix which has good buffering effect and high electronic conductivity, can be responsible for the improved cyclic performance.

Core-shell TiO2@ZnO nanorods for efficient ultraviolet photodetection.

PubMed

Panigrahi, Shrabani; Basak, Durga

2011-05-01

Core-shell TiO(2)@ZnO nanorods (NRs) have been fabricated by a simple two step method: growth of ZnO NRs' array by an aqueous chemical technique and then coating of the NRs with a solution of titanium isopropoxide [Ti(OC(3)H(7))(4)] followed by a heating step to form the shell. The core-shell nanocomposites are composed of single-crystalline ZnO NRs, coated with a thin TiO(2) shell layer obtained by varying the number of coatings (one, three and five times). The ultraviolet (UV) emission intensity of the nanocomposite is largely quenched due to an efficient electron-hole separation reducing the band-to-band recombinations. The UV photoconductivity of the core-shell structure with three times TiO(2) coating has been largely enhanced due to photoelectron transfer between the core and the shell. The UV photosensitivity of the nanocomposite becomes four times larger while the photocurrent decay during steady UV illumination has been decreased almost by 7 times compared to the as-grown ZnO NRs indicating high efficiency of these core-shell structures as UV sensors. © The Royal Society of Chemistry 2011

Core-shell TiO2@ZnO nanorods for efficient ultraviolet photodetection

NASA Astrophysics Data System (ADS)

Panigrahi, Shrabani; Basak, Durga

2011-05-01

Core-shell TiO2@ZnO nanorods (NRs) have been fabricated by a simple two step method: growth of ZnO NRs' array by an aqueous chemical technique and then coating of the NRs with a solution of titanium isopropoxide [Ti(OC3H7)4] followed by a heating step to form the shell. The core-shell nanocomposites are composed of single-crystalline ZnO NRs, coated with a thin TiO2 shell layer obtained by varying the number of coatings (one, three and five times). The ultraviolet (UV) emission intensity of the nanocomposite is largely quenched due to an efficient electron-hole separation reducing the band-to-band recombinations. The UV photoconductivity of the core-shell structure with three times TiO2 coating has been largely enhanced due to photoelectron transfer between the core and the shell. The UV photosensitivity of the nanocomposite becomes four times larger while the photocurrent decay during steady UV illumination has been decreased almost by 7 times compared to the as-grown ZnO NRs indicating high efficiency of these core-shell structures as UV sensors.

Spectral and ion emission features of laser-produced Sn and SnO2 plasmas

NASA Astrophysics Data System (ADS)

Hui, Lan; Xin-Bing, Wang; Du-Luo, Zuo

2016-03-01

We have made a detailed comparison of the atomic and ionic debris, as well as the emission features of Sn and SnO2 plasmas under identical experimental conditions. Planar slabs of pure metal Sn and ceramic SnO2 are irradiated with 1.06 μm, 8 ns Nd:YAG laser pulses. Fast photography employing an intensified charge coupled device (ICCD), optical emission spectroscopy (OES), and optical time of flight emission spectroscopy are used as diagnostic tools. Our results show that the Sn plasma provides a higher extreme ultraviolet (EUV) conversion efficiency (CE) than the SnO2 plasma. However, the kinetic energies of Sn ions are relatively low compared with those of SnO2. OES studies show that the Sn plasma parameters (electron temperature and density) are lower compared to those of the SnO2 plasma. Furthermore, we also give the effects of the vacuum degree and the laser pulse energy on the plasma parameters. Project supported by the National Natural Science Foundation of China (Grant No. 11304235) and the Director Fund of WNLO, China.

The structural and optical properties of Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films from the first principles calculations

NASA Astrophysics Data System (ADS)

Zhang, Wenshu; Hu, Huijun; Zhang, Caili; Li, Jianguo; Li, Yuping; Ling, Lixia; Han, Peide

2017-12-01

Based on the density functional theory, the structural stability and optical properties of undoped and Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films are investigated. The good stability of the films based on the ZnO (0 0 0 1) can be obtained when the layer is larger than 12. Moreover, the dielectric function, refractive index, absorption, and reflectivity of doped ZnO nano thin films have been analyzed in detail. In the visible light range, the values of ZnO films from 12 to 24 layers are all smaller than those of the bulk. And with the augment of the layers, the values keep increasing. All the results signify that the nano film of 12 layers possesses the lowest reflectivity and weakest absorption. In addition, there is an evident impact of some doped element on the properties of nano films. The absorption and reflectivity of Ti, Si-doped ZnO nano thin films are higher than those of the clean films, while Al, B-doped are lower, especially B-doped. Moreover, the conductivity of the doped structure is better than that of the bulk. Thus, the B-doped ZnO nano thin films could be potential candidate materials of transparent conductive films.

Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel

NASA Astrophysics Data System (ADS)

Boratto, Miguel H.; Ramos, Roberto A.; Congiu, Mirko; Graeff, Carlos F. O.; Scalvi, Luis V. A.

2017-07-01

A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol-gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 × 102 in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 102 under applied square wave voltage.

Improved Li storage performance in SnO 2 nanocrystals by a synergetic doping

DOE PAGES

Wan, Ning; Lu, Xia; Wang, Yuesheng; ...

2016-01-06

Tin dioxide (SnO 2) is a widely investigated lithium (Li) storage material because of its easy preparation, two-step storage mechanism and high specific capacity for lithium-ion batteries (LIBs). In this contribution, a phase-pure cobalt-doped SnO 2 (Co/SnO 2) and a cobalt and nitrogen co-doped SnO 2 (Co-N/SnO 2) nanocrystals are prepared to explore their Li storage behaviors. It is found that the morphology, specific surface area, and electrochemical properties could be largely modulated in the doped and co-doped SnO 2 nanocrystals. Gavalnostatic cycling results indicate that the Co-N/SnO 2 electrode delivers a specific capacity as high as 716 mAh gmore » –1 after 50 cycles, and the same outstanding rate performance can be observed in subsequent cycles due to the ionic/electronic conductivity enhancement by co-doping effect. Further, microstructure observation indicates the existence of intermediate phase of Li 3N with high ionic conductivity upon cycling, which probably accounts for the improvements of Co-N/SnO 2 electrodes. Furthermore, we find that the method of synergetic doping into SnO 2 with Co and N, with which the electrochemical performances is enhanced remarkably, undoubtedly, will have an important influence on the material itself and community of LIBs as well.« less

Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures

NASA Astrophysics Data System (ADS)

Tuyaerts, Romain; Poncelet, Olivier; Raskin, Jean-Pierre; Proost, Joris

2017-10-01

In this article, we propose ZnO thin films as a suitable material for piezoresistors in transparent and flexible electronics. ZnO thin films have been deposited by DC reactive magnetron sputtering at room temperature at various oxygen partial pressures. All the films have a wurtzite structure with a strong (0002) texture measured by XRD and are almost stoichiometric as measured by inductively coupled plasma optical emission spectroscopy. The effect of oxygen concentration on grain growth has been studied by in-situ multi-beam optical stress sensor, showing internal stress going from 350 MPa to -1.1 GPa. The transition between tensile and compressive stress corresponds to the transition between metallic and oxidized mode of reactive sputtering. This transition also induces a large variation in optical properties—from absorbent to transparent, and in the resistivity—from 4 × 10 - 2 Ω .cm to insulating. Finally, the piezoresistance of the thin film has been studied and showed a gauge factor (ΔR/R)/ɛ comprised between -5.8 and -8.5.

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Contact resistance reduction of ZnO thin film transistors (TFTs) with saw-shaped electrode.

PubMed

Park, Woojin; Shaikh, Sohail F; Min, Jung-Wook; Lee, Sang Kyung; Lee, Byoung Hun; Hussain, Muhammad M

2018-08-10

We report on a saw-shaped electrode architecture ZnO thin film transistor (TFT), which effectively increases the channel width. The contact line of the saw-shaped electrode is almost twice as long at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and a reduction in the contact resistance by over 50%, when compared to a typically shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to the extension of the channel width. This technique can contribute to device performance enhancement, and in particular reduce the contact resistance, which is a serious challenge.

Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

2018-03-01

High band gap (3.34 eV) and large exciton binding energy (60 meV) at room temperature facilitates ZnO as a useful candidate for optoelectronics devices. Presence of zinc interstitial and oxygen vacancies results in n-type ZnO film. Phosphorus implantation was carried out using plasma immersion ion implantation technique (2kV, 900W) for constant duration (50 s) on RF sputtered ZnO thin films (Sample A). For dopant activation, sample A was subjected to Rapid Thermal Annealing (RTA) at 700, 800, 900 and 1000°C for 10 s in Oxygen ambient (Sample B, C, D, E). Low temperature (18 K) photoluminescence measurement demonstrated strong donor bound exciton peak for sample A. Dominant donor to acceptor pair peak (DAP) was observed for sample D at around 3.22 eV with linewidth of 131.3 meV. High resolution x-ray diffraction measurement demonstrated (001) and (002) peaks for sample A. (002) peak with high intensity was observed from all annealed samples. Incorporation of phosphorus in ZnO films leads to peak shift towards higher 2θ angle indicate tensile strain in implanted samples. Scanning electron microscopy images reveals improvement in grain size distribution along with reduction of implantation related defects. Raman spectra measured A1(LO) peak at around 576 cm-1 for sample A. Low intensity E2 (high) peak was observed for sample D indicating formation of (PZn+2VZn) complexes. From room temperature Hall measurement, sample D measured 1.17 x 1018 cm -3 carrier concentration with low resistivity of 0.464 Ω.

Effects of Na Doping on Structural, Optical, and Electronic Properties of ZnO Thin Films Fabricated by Sol-Gel Technique

NASA Astrophysics Data System (ADS)

Fan, Heliang; Yao, Zhen; Xu, Cheng; Wang, Xinqiang; Yu, Zhichao

2018-04-01

Undoped and Na-doped ZnO thin films were fabricated by sol-gel technique on quartz glass substrates and annealed at 500°C for 1 h. The structural properties of the films were characterized using x-ray diffraction analysis, which revealed hexagonal wurtzite structure with no peaks corresponding to Na2O or other Na phases being found. Surface morphology observations by scanning electron microscopy revealed that the crystallite size and topographical properties of the ZnO films were influenced by the Na doping concentration. X-ray photoelectron spectra revealed presence of Na+ in ZnO regime. The transmittance spectra indicated that the average transmittance of Na-doped ZnO film was above 80% in the visible range, superior to that of the undoped film. There was a blue-shift in the ultraviolet absorption edge with increase of the Na content. Photoluminescence spectra illustrated two peaks, corresponding to ultraviolet near-band-edge and visible emission.

Selective Detection of Formaldehyde Gas Using a Cd-Doped TiO2-SnO2 Sensor

PubMed Central

Zeng, Wen; Liu, Tianmo; Wang, Zhongchang; Tsukimoto, Susumu; Saito, Mitsuhiro; Ikuhara, Yuichi

2009-01-01

We report the microstructure and gas-sensing properties of a nonequilibrium TiO2-SnO2 solid solution prepared by the sol-gel method. In particular, we focus on the effect of Cd doping on the sensing behavior of the TiO2-SnO2 sensor. Of all volatile organic compound gases examined, the sensor with Cd doping exhibits exclusive selectivity as well as high sensitivity to formaldehyde, a main harmful indoor gas. The key gas-sensing quantities, maximum sensitivity, optimal working temperature, and response and recovery time, are found to meet the basic industrial needs. This makes the Cd-doped TiO2-SnO2 composite a promising sensor material for detecting the formaldehyde gas. PMID:22291551

Structure of the SnO2(110 ) -(4 ×1 ) Surface

NASA Astrophysics Data System (ADS)

Merte, Lindsay R.; Jørgensen, Mathias S.; Pussi, Katariina; Gustafson, Johan; Shipilin, Mikhail; Schaefer, Andreas; Zhang, Chu; Rawle, Jonathan; Nicklin, Chris; Thornton, Geoff; Lindsay, Robert; Hammer, Bjørk; Lundgren, Edvin

2017-09-01

Using surface x-ray diffraction (SXRD), quantitative low-energy electron diffraction (LEED), and density-functional theory (DFT) calculations, we have determined the structure of the (4 ×1 ) reconstruction formed by sputtering and annealing of the SnO2(110 ) surface. We find that the reconstruction consists of an ordered arrangement of Sn3O3 clusters bound atop the bulk-terminated SnO2(110 ) surface. The model was found by application of a DFT-based evolutionary algorithm with surface compositions based on SXRD, and shows excellent agreement with LEED and with previously published scanning tunneling microscopy measurements. The model proposed previously consisting of in-plane oxygen vacancies is thus shown to be incorrect, and our result suggests instead that Sn(II) species in interstitial positions are the more relevant features of reduced SnO2(110 ) surfaces.

Laser induced forward transfer of SnO2 for sensing applications using different precursors systems

NASA Astrophysics Data System (ADS)

Mattle, Thomas; Hintennach, Andreas; Lippert, Thomas; Wokaun, Alexander

2013-02-01

This paper presents the transfer of SnO2 by laser induced forward transfer (LIFT) for gas sensor applications. Different donor substrates of SnO2 with and without triazene polymer (TP) as a dynamic release layer were prepared. Transferring these films under different conditions were evaluated by optical microscopy and functionality. Transfers of sputtered SnO2 films do not lead to satisfactory results and transfers of SnO2 nanoparticles are difficult. Transfers of SnO2 nanoparticles can only be achieved when applying a second laser pulse to the already transferred material, which improves the adhesion resulting in a complete pixel. A new approach of decomposing the transfer material during LIFT transfer was developed. Donor films based on UV absorbing metal complex precursors namely, SnCl2(acac)2 were prepared and transferred using the LIFT technique. Transfer conditions were optimized for the different systems, which were deposited onto sensor-like microstructures. The conductivity of the transferred material at temperatures of about 400 ∘C are in a range usable for SnO2 gas sensors. First sensing tests were carried out and the transferred material proved to change conductivity when exposed to ethanol, acetone, and methane.

LPG sensing characteristics of electrospray deposited SnO2 nanoparticles

NASA Astrophysics Data System (ADS)

Gürbüz, Mevlüt; Günkaya, Göktuğ; Doğan, Aydın

2014-11-01

In this study, SnO2 films were fabricated on conductive substrate such as aluminum and platinum coated alumina using electro-spray deposition (ESD) method for gas sensor applications. Solution flow rate, coating time, substrate-nozzle distance and solid/alcohol ratio were studied to optimize SnO2 film structure. The morphology of the deposited films was characterized by stereo and scanning electron microscopy (SEM). The gas sensing properties of tin oxide films were investigated using liquid petroleum gas (LPG) for various lower explosive limit (LEL). The results obtained from microscopic analyses show that optimum SnO2 films were evaluated at flow rate of 0.05 ml/min, at distance of 6 cm, for 10 min deposition time, for 20 gSnO2/Lethanol ratio and at 7 kV DC electric field. By the results obtained from the gas sensing behavior, the sensitivity of the films was increased with operating temperature. The films showed better sensitivity for 20 LEL LPG concentration at 450 °C operating temperature.

Thermoelectric Properties in the TiO2/SnO2 System

NASA Technical Reports Server (NTRS)

Dynys, F.; Sayir, A.; Sehirlioglu, A.; Berger, M.

2009-01-01

Nanotechnology has provided a new interest in thermoelectric technology. A thermodynamically driven process is one approach in achieving nanostructures in bulk materials. TiO2/SnO2 system exhibits a large spinodal region with exceptional stable phase separated microstructures up to 1400 C. Fabricated TiO2/SnO2 nanocomposites exhibit n-type behavior with Seebeck coefficients greater than -300 .V/K. Composites exhibit good thermal conductance in the range of 7 to 1 W/mK. Dopant additions have not achieved high electrical conductivity (<1000 S/m). Formation of oxygen deficient composites, TixSn1-xO2-y, can change the electrical conductivity by four orders of magnitude. Achieving higher thermoelectric ZT by oxygen deficiency is being explored. Seebeck coeffcient, thermal conductivity, electrical conductance and microstructure will be discussed in relation to composition and doping.

Highly uniform and vertically aligned SnO2 nanochannel arrays for photovoltaic applications

NASA Astrophysics Data System (ADS)

Kim, Jae-Yup; Kang, Jin Soo; Shin, Junyoung; Kim, Jin; Han, Seung-Joo; Park, Jongwoo; Min, Yo-Sep; Ko, Min Jae; Sung, Yung-Eun

2015-04-01

Nanostructured electrodes with vertical alignment have been considered ideal structures for electron transport and interfacial contact with redox electrolytes in photovoltaic devices. Here, we report large-scale vertically aligned SnO2 nanochannel arrays with uniform structures, without lateral cracks fabricated by a modified anodic oxidation process. In the modified process, ultrasonication is utilized to avoid formation of partial compact layers and lateral cracks in the SnO2 nanochannel arrays. Building on this breakthrough, we first demonstrate the photovoltaic application of these vertically aligned SnO2 nanochannel arrays. These vertically aligned arrays were directly and successfully applied in quasi-solid state dye-sensitized solar cells (DSSCs) as photoanodes, yielding reasonable conversion efficiency under back-side illumination. In addition, a significantly short process time (330 s) for achieving the optimal thickness (7.0 μm) and direct utilization of the anodized electrodes enable a simple, rapid and low-cost fabrication process. Furthermore, a TiO2 shell layer was coated on the SnO2 nanochannel arrays by the atomic layer deposition (ALD) process for enhancement of dye-loading and prolonging the electron lifetime in the DSSC. Owing to the presence of the ALD TiO2 layer, the short-circuit photocurrent density (Jsc) and conversion efficiency were increased by 20% and 19%, respectively, compared to those of the DSSC without the ALD TiO2 layer. This study provides valuable insight into the development of efficient SnO2-based photoanodes for photovoltaic application by a simple and rapid fabrication process.Nanostructured electrodes with vertical alignment have been considered ideal structures for electron transport and interfacial contact with redox electrolytes in photovoltaic devices. Here, we report large-scale vertically aligned SnO2 nanochannel arrays with uniform structures, without lateral cracks fabricated by a modified anodic oxidation process

Synthesis and properties of Li2SnO3/polyaniline nanocomposites as negative electrode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Wang, Qiufen; Huang, Ying; Miao, Juan; Zhao, Yang; Wang, Yan

2012-10-01

The nanocomposites Li2SnO3/polyaniline (Li2SnO3/PANI) have been synthesized by a micro emulsion polymerization method. The structure, morphology and electrochemical properties of the as-prepared materials are characterized by XRD, FTIR, Raman, XPS, TGA, TEM and electrochemical measurements. Results show that Li2SnO3/PANI nanocomposites are composed of uniform and blocky nano-sized particles (40-50 nm) with clear lattice fringes. Electrochemical measurement suggests that Li2SnO3/PANI exhibits better cycling properties and lower initial irreversible capacities than Li2SnO3 as negative electrodes materials for lithium-ion batteries. At a current density of 60 mA g-1 in the voltage about 0.05-2.0 V, the initial irreversible capacity of Li2SnO3/PANI is 563 mAh g-1 while it is 687.5 mAh g-1 to Li2SnO3. The capacity retained of Li2SnO3/PANI (569.2 mAh g-1) is higher than that of Li2SnO3 (510.2 mAh g-1) after 50 cycles. The PANI in the Li2SnO3/PANI nanocomposites can buffer the released stress caused by the drastic volume variation during the alloying/de-alloying process of Li-Sn.

ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature

NASA Astrophysics Data System (ADS)

Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

2016-03-01

ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications.

Photoluminescence and photoconductivity studies on amorphous and crystalline ZnO thin films obtained by sol-gel method

NASA Astrophysics Data System (ADS)

Valverde-Aguilar, G.; Manríquez Zepeda, J. L.

2015-03-01

Amorphous and crystalline ZnO thin films were obtained by the sol-gel process. A precursor solution of ZnO was synthesized by using zinc acetate dehydrate as inorganic precursor at room temperature. The films were spin-coated on silicon and glass wafers and gelled in humid air. The films were calcined at 450 °C for 15 min to produce ZnO nanocrystals with a wurtzite structure. Crystalline ZnO film exhibits an absorption band located at 359 nm (3.4 eV). Photoconductivity technique was used to determine the charge transport mechanism on both kinds of films. Experimental data were fitted with straight lines at darkness and under illumination at 355 and 633 nm wavelengths. This indicates an ohmic behavior. The photovoltaic and photoconductivity parameters were determined from the current density versus the applied electrical field results.