PDMS-based triboelectric and transparent nanogenerators with ZnO nanorod arrays.
Ko, Yeong Hwan; Nagaraju, Goli; Lee, Soo Hyun; Yu, Jae Su
2014-05-14
Vertically-grown ZnO nanorod arrays (NRAs) on indium tin oxide (ITO)-coated polyethylene terephthalate (PET), as a top electrode of nanogenerators, were investigated for the antireflective property as well as an efficient contact surface in bare polydimethysiloxane (PDMS)-based triboelectric nanogenerators. Compared to conventional ITO-coated PET (i.e., ITO/PET), the ZnO NRAs considerably suppressed the reflectance from 20 to 9.7% at wavelengths of 300-1100 nm, creating a highly transparent top electrode, as demonstrated by theoretical analysis. Also, the interval time between the peaks of generated output voltage under external pushing forces was significantly decreased from 1.84 to 0.19 s because the reduced contact area of the PDMS by discrete surfaces of the ZnO NRAs on ITO/PET causes a rapid sequence for triboelectric charge generation process including rubbing and separating. Therefore, the use of this top electrode enabled to operate the transparent PDMS-based triboelectric nanogenerator at high frequency of external pushing force. Under different external forces of 0.3-10 kgf, the output voltage and current were also characterized.
2014-01-01
This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107
A generic approach for vertical integration of nanowires.
Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Lévy, F; Chelnokov, A
2008-08-27
We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.
NASA Astrophysics Data System (ADS)
Pea, M.; Maiolo, L.; Giovine, E.; Rinaldi, A.; Araneo, R.; Notargiacomo, A.
2016-05-01
We report on the conductive-atomic force microscopy (C-AFM) study of metallic layers in order to find the most suitable configuration for electrical characterization of individual ZnO micro-pillars fabricated by focused ion beam (FIB). The electrical resistance between the probe tip and both as deposited and FIB processed metal layers (namely, Cr, Ti, Au and Al) has been investigated. Both chromium and titanium evidenced a non homogenous and non ohmic behaviour, non negligible scanning probe induced anodic oxidation associated to electrical measurements, and after FIB milling they exhibited significantly higher tip-sample resistance. Aluminium had generally a more apparent non conductive behaviour. Conversely, gold films showed very good tip-sample conduction properties being less sensitive to FIB processing than the other investigated metals. We found that a reliable C-AFM electrical characterization of ZnO microstructures obtained by FIB machining is feasible by using a combination of metal films as top contact layer. An Au/Ti bilayer on top of ZnO was capable to sustain the FIB fabrication process and to form a suitable ohmic contact to the semiconductor, allowing for reliable C-AFM measurement. To validate the consistency of this approach, we measured the resistance of ZnO micropillars finding a linear dependence on the pillar height, as expected for an ohmic conductor, and evaluated the resistivity of the material. This procedure has the potential to be downscaled to nanometer size structures by a proper choice of metal films type and thickness.
NASA Astrophysics Data System (ADS)
Huang, Shen-Che; Lu, Chien-Cheng; Su, Wei-Ming; Weng, Chen-Yuan; Chen, Yi-Cian; Wang, Shing-Chung; Lu, Tien-Chang; Chen, Ching-Pang; Chen, Hsiang
2018-01-01
Three types of ZnO-based nanocomposites were fabricated consisting of 80-nm Au nanoparticles (NPs), a graphene layer, and ZnO nanorods (NRs). To investigate interactions between the ZnO NRs and Au nanoparticle, multiple material analysis techniques including field-emission scanning electron microscopy (FESEM), surface contact angle measurements, secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopic characterizations were performed. Results indicate that incorporating a graphene layer could block the interaction between the ZnO NRs and the Au NPs. Furthermore, the Raman signal of the Au NPs could be enhanced by inserting a graphene layer on top of the ZnO NRs. Investigation of these graphene-incorporated nanocomposites would be helpful to future studies of the physical properties and Raman analysis of the ZnO-based nanostructure design.
Trioctylphosphine-assisted morphology control of ZnO nanoparticles
NASA Astrophysics Data System (ADS)
Hong, Yun-Kun; Cho, GeonHee; Park, YoonSu; Oh, Soong Ju; Ha, Don-Hyung
2018-06-01
This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM = 2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.
Trioctylphosphine-assisted morphology control of ZnO nanoparticles.
Hong, Yun-Kun; Cho, GeonHee; Park, YoonSu; Oh, Soong Ju; Ha, Don-Hyung
2018-06-01
This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM = 2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.
NASA Astrophysics Data System (ADS)
MacLeod, Bradley; Tremolet de Villers, Bertrand; Cowan, Sarah; Ratcliff, Erin; Olson, Dana
2014-03-01
Solution-processed ZnO thin films are now commonly used as n-type bottom contacts in inverted-geometry organic photovoltaics (OPVs). The use of ZnO eliminates the need for highly-reactive top-contact (air-interface) electrode material, such as calcium and aluminum which are commonly used in conventional geometries, which enables operational lifetimes of unencapsulated devices to shift from minutes or hours to days. Modification of the ZnO film by self-assembled monolayers (SAMs) has been shown to enhance performance as well as air-stability during storage. We modify ZnO with dipolar phosphonic acids and observe enhanced performance and stability. We show for the first time devices measured under continuous illumination at one-sun intensity which have significantly enhanced stability when utilizing SAM-modified ZnO. These continuous-illumination stability measurements allow us to investigate the degradation mechanisms of these more stable inverted OPV devices. This work was was supported by of the Center for Interface Science: Solar Electric Materials (CISSEM), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001084.
ZnO for solar cell and thermoelectric applications
NASA Astrophysics Data System (ADS)
Zhou, Chuanle; Ghods, Amirhossein; Yunghans, Kelcy L.; Saravade, Vishal G.; Patel, Paresh V.; Jiang, Xiaodong; Kucukgok, Bahadir; Lu, Na; Ferguson, Ian
2017-03-01
ZnO-based materials show promise in energy harvesting applications, such as piezoelectric, photovoltaic and thermoelectric. In this work, ZnO-based vertical Schottky barrier solar cells were fabricated by MOCVD de- position of ZnO thin films on ITO back ohmic contact, while Ag served as the top Schottky contact. Various rapid thermal annealing conditions were studied to modify the carrier density and crystal quality. Greater than 200 nm thick ZnO films formed polycrystalline crystal structure, and were used to demonstrate Schottky solar cells. I-V characterizations of the devices showed photovoltaic performance, but but need further development. This is the first demonstration of vertical Schottky barrier solar cell based on wide bandgap ZnO film. Thin film and bulk ZnO grown by MOCVD or melt growth were also investigated in regards to their room- temperature thermoelectric properties. The Seebeck coefficient of bulk ZnO was found to be much larger than that of thin film ZnO at room temperature due to the higher crystal quality in bulk materials. The Seebeck coefficients decrease while the carrier concentration increases due to the crystal defects caused by the charge carriers. The co-doped bulk Zn0:96Ga0:02Al0:02O showed enhanced power factors, lower thermal conductivities and promising ZT values in the whole temperature range (300-1300 K).
NASA Astrophysics Data System (ADS)
Singh, Satyendra Kumar; Hazra, Purnima; Tripathi, Shweta; Chakrabarti, P.
2016-03-01
In this paper, structural, electrical and ultraviolet photodetection parameters of RF sputtered-ZnO/Si heterojunction diodes are analyzed. In this work, ZnO thin film was deposited on bare Si substrate as well as Si substrate coated with ultrathin ZnO seed layer to exhibit the effect of seed layer on device performance. AFM image of as-grown ZnO films have exhibited the uniform growth ZnO film over the whole Si substrate with average roughness of 3.2 nm and 2.83 nm for ZnO with and without seed layer respectively. Stronger peak intensity along (002) direction, as shown in XRD spectra confirm that ZnO film grown on ZnO seed layer is having more stable wurtzite structure. Ti/Al point contacts were deposited on top of the ZnO film and a layer of Al was deposited on bottom of Si substrate for using as ohmic contacts for further device characterization at dark and under UV light of 365 nm wavelength. This process is repeated for both the films sequentially. The photo-responsivity of our proposed devices is calculated as 0.34 A/W for seed layer-mediated devices and 0.26 A/W for devices without seed layer. These values are very high as compare to the reported value of photo-responsivity for same kind of ZnO/Si heterojunction device prototypes prepared by other techniques.
Effects of negative gate-bias stress on the performance of solution-processed zinc-oxide transistors
NASA Astrophysics Data System (ADS)
Kim, Dongwook; Lee, Woo-Sub; Shin, Hyunji; Choi, Jong Sun; Zhang, Xue; Park, Jaehoon; Hwang, Jaeeun; Kim, Hongdoo; Bae, Jin-Hyuk
2014-08-01
We studied the effects of negative gate-bias stress on the electrical characteristics of top-contact zinc-oxide (ZnO) thin-film transistors (TFTs), which were fabricated by spin coating a ZnO solution onto a silicon-nitride gate dielectric layer. The negative gate-bias stress caused characteristic degradations in the on-state currents and the field-effect mobility of the fabricated ZnO TFTs. Additionally, a decrease in the off-state currents and a positive shift in the threshold voltage occurred with increasing stress time. These results indicate that the negative gate-bias stress caused an injection of electrons into the gate dielectric, thereby deteriorating the TFT's performance.
A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.
Hwang, Hyeon Jun; Chang, Kyoung Eun; Yoo, Won Beom; Shim, Chang Hoo; Lee, Sang Kyung; Yang, Jin Ho; Kim, So-Young; Lee, Yongsu; Cho, Chunhum; Lee, Byoung Hun
2017-02-16
We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.73 eV, and an on-off ratio of up to 10 7 was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.
NASA Astrophysics Data System (ADS)
Hjort, Filip; Hashemi, Ehsan; Adolph, David; Ive, Tommy; Haglund, Àsa
2017-02-01
III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch and high refractive index contrast, which could yield a mirror with a broad stopband and a high peak reflectivity using less than 20 DBR-pairs. A crack-free ZnO/GaN DBR was grown by hybrid plasma-assisted molecular beam epitaxy. The ZnO layers were approximately 20 nm thick and had an electron concentration of 1×1019 cm-3, while the GaN layers were 80-110 nm thick with an electron concentration of 1.8×1018 cm-3. In order to measure the resistance, mesa structures were formed by dry etching through the top 3 DBR-pairs and depositing non-annealed Al contacts on the GaN-layers at the top and next to the mesas. The measured specific series resistance was dominated by the lateral and contact contributions and gave an upper limit of 10-3Ωcm2 for the vertical resistance. Simulations show that the ZnO electron concentration and the cancellation of piezoelectric and spontaneous polarization in strained ZnO have a large impact on the vertical resistance and that it could be orders of magnitudes lower than what was measured. This is the first report on electrically conductive ZnO/GaN DBRs and the upper limit of the resistance reported here is close to the lowest values reported for III-nitride-based DBRs.
ZnO Schottky barriers and Ohmic contacts
NASA Astrophysics Data System (ADS)
Brillson, Leonard J.; Lu, Yicheng
2011-06-01
ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts, these studies encompass the nature of metal-specific interactions, the role of annealing, multilayered contacts, alloyed contacts, metallization schemes for state-of-the-art contacts, and their application to n-type versus p-type ZnO. Both ZnO Schottky barriers and ohmic contacts show a wide range of phenomena and electronic behavior, which can all be directly tied to chemical and structural changes on an atomic scale.
Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.
Zhang, Xue; Lee, Hyeonju; Kwon, Jung-Hyok; Kim, Eui-Jik; Park, Jaehoon
2017-07-31
We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.
Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
Zhang, Xue; Lee, Hyeonju; Kim, Eui-Jik; Park, Jaehoon
2017-01-01
We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance. PMID:28773242
Yin, Zhouping; Wang, Xiaomei; Sun, Fazhe; Tong, Xiaohu; Zhu, Chen; Lv, Qiying; Ye, Dong; Wang, Shuai; Luo, Wei; Huang, YongAn
2017-09-22
Gas sensing performance can be improved significantly by the increase in both the effective gas exposure area and the surface reactivitiy of ZnO nanorods. Here, we propose aligned hierarchical Ag/ZnO nano-heterostructure arrays (h-Ag/ZnO-NAs) via electrohydrodynamic nanowire template, together with a subsequent hydrothermal synthesis and photoreduction reaction. The h-Ag/ZnO-NAs scatter at top for higher specific surface areas with the air, simultaneously contact at root for the electrical conduction. Besides, the ZnO nanorods are uniformly coated with dispersed Ag nanoparticles, resulting in a tremendous enhancement of the surface reactivity. Compared with pure ZnO, such h-Ag/ZnO-NAs exhibit lower electrical resistance and faster responses. Moreover, they demonstrate enhanced NO 2 gas sensing properties. Self-assembly via electrohydrodynamic nanowire template paves a new way for the preparation of high performance gas sensors.
Ultraviolet Electrically Injected Light Sources With Epitaxial ZnO-Based Heterojunctions
2007-08-01
ohmic contacts to ZnO , UV photoconductors, and thin film transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated... transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated, as a potential means of locally inverting ZnO to p-type, and to...low contact resistivity ......................... 8 ZnO Thin Film Transistors
Semipolar III-nitride laser diodes with zinc oxide cladding.
Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P
2017-07-24
Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.
Fabrication of 1-dimension nano-material-based device and its electrical characteristics
NASA Astrophysics Data System (ADS)
Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong; Zhang, Min
2008-12-01
In recent years, many kinds of 1-dimension nano-materials (Carbon nanotube, ZnO nanobelt and nanowire etc.) continue to emerge which exhibit distinct and unique electromechanical, piezoelectric, photoelectrical properties. In this paper, a 1-dimension nano-materials-based device was proposed. The bottom-up and top-down combined process were used for constructing CNT-array-based device and ZnO nanowire device. The electrical characteristics of the 1D nano-materials-based devices were also investigated. The measurement results of electrical characteristics demonstrate that it is ohm electrical contact behavior between the nano-material and micro-electrodes in the proposed device which also have the field effect. The proposed 1D nano-material-based device shows the application potential in the sensing fields.
Ali, Ghusoon M.; Thompson, Cody V.; Jasim, Ali K.; Abdulbaqi, Isam M.; Moore, James C.
2013-01-01
Three methods were used to fabricate ZnO-based room temperature liquid petroleum gas (LPG) sensors having interdigitated metal-semiconductor-metal (MSM) structures. Specifically, devices with Pd Schottky contacts were fabricated with: (1) un-doped ZnO active layers; (2) Pd-doped ZnO active layers; and (3) un-doped ZnO layers on top of Pd microstructure arrays. All ZnO films were grown on p-type Si(111) substrates by the sol-gel method. For devices incorporating a microstructure array, Pd islands were first grown on the substrate by thermal evaporation using a 100 μm mesh shadow mask. We have estimated the sensitivity of the sensors for applied voltage from –5 to 5 V in air ambient, as well as with exposure to LPG in concentrations from 500 to 3,500 ppm at room temperature (300 K). The current-voltage characteristics were studied and parameters such as leakage current, barrier height, reach-through voltage, and flat-band voltage were extracted. We include contributions due to the barrier height dependence on the electric field and tunneling through the barrier for the studied MSM devices. The Pd-enhanced devices demonstrated a maximum gas response at flat-band voltages. The study also revealed that active layers consisting of Pd microstructure embedded ZnO films resulted in devices exhibiting greater gas-response as compared to those using Pd-doped ZnO thin films or un-doped active layers.
NASA Astrophysics Data System (ADS)
Jeon, Woosung; Leem, Jae-Young
2018-05-01
ZnO nanorods were prepared on a Si substrate with and without a ZnO seed layer formed by electro-oxidation to investigate the effect of the seed layer on their growth. The ZnO nanorods grown on the ZnO seed layer had top surfaces that were flat whereas those grown without it had rough top surfaces, as observed in field-emission scanning electron microscopy images. In the Xray diffraction analysis, all ZnO nanorods showed preferential orientation with the (002) plane. In the case of ZnO nanorods prepared with a ZnO seed layer, the residual stress decreased, and the full width at half maximum of the ZnO (002) plane peak decreased. The photoluminescence spectra show a strong and narrow near-band-edge emission peak and high near-band-edge emission to deep-level emission peak ratio for the ZnO nanorods prepared with the seed layer. With respect to the photoresponse properties, the ZnO nanorods grown with the ZnO seed layer showed higher responsivity and faster rise/decay curves than those grown without it. Thus, the ZnO seed layer formed by electro-oxidation improves the structural, optical, and photoresponse properties of the ZnO nanorods formed on it. This method could serve as a new route for improving the properties of optoelectronic devices.
Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs
2014-03-27
scale, high-frequency ZnO thin - film transistors (TFTs) could be fabricated. Molybdenum, tantalum, titanium tungsten 10-90, and tungsten metallic contact... thin - film transistor layout utilized in the thesis research . . . . . 42 3.4 Process Flow Diagram for Optical and e-Beam Devices...TFT thin - film transistor TLM transmission line model UV ultra-violet xvii SELECTIVE DRY ETCH FOR DEFINING OHMIC CONTACTS FOR HIGH PERFORMANCE ZnO TFTs
Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System
NASA Astrophysics Data System (ADS)
Lai, Bo-Ting; Lee, Ching-Ting; Hong, Jhen-Dong; Yao, Shiau-Lu; Liu, Day-Shan
2010-08-01
The rectifying property of a zinc oxide (ZnO)-based Schottky diode prepared using a radio-frequency (rf) magnetron cosputtering system was improved by enhancing the cosputtered ZnO crystal quality, thereby optimizing the ohmic contact resistance and compensating the Schottky contact surface states. An undoped ZnO layer with a high c-axis orientation and a low internal residual stress was achieved using a postannealing treatment. A homogeneous n-type ZnO-indium tin oxide (ITO) cosputtered film was deposited onto the undoped ZnO layer to optimize the ohmic contact behavior to the Al electrode. The Schottky contact surface of the undoped ZnO layer to the Ni/Au electrode was passivated using an oxygen plasma treatment. Owing to the compensation of the native oxygen vacancies (VO) on the undoped ZnO surface, the leakage current markedly decreased and subsequently led to a quality Schottky diode performance with an ideality factor of 1.23 and a Schottky barrier height of 0.82 eV.
Contact resistance reduction of ZnO thin film transistors (TFTs) with saw-shaped electrode.
Park, Woojin; Shaikh, Sohail F; Min, Jung-Wook; Lee, Sang Kyung; Lee, Byoung Hun; Hussain, Muhammad M
2018-08-10
We report on a saw-shaped electrode architecture ZnO thin film transistor (TFT), which effectively increases the channel width. The contact line of the saw-shaped electrode is almost twice as long at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and a reduction in the contact resistance by over 50%, when compared to a typically shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to the extension of the channel width. This technique can contribute to device performance enhancement, and in particular reduce the contact resistance, which is a serious challenge.
MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films
NASA Astrophysics Data System (ADS)
Ben-Yaacov, Tammy
In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs, and we investigate the n-ZnO/p-GaN interface. We show that ZnO has potential as an effective p-contact for these devices, and determine properties that still need improvement in order for ZnO to compete with other contact materials. We also compare the device performance to metal-contacted devices. In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.
Enhanced performance of ZnO microballoon arrays for a triboelectric nanogenerator.
Deng, Weili; Zhang, Binbin; Jin, Long; Chen, Yueqi; Chu, Wenjun; Zhang, Haitao; Zhu, Minhao; Yang, Weiqing
2017-03-01
In recent years, triboelectric nanogenerators (TENGs), harvesting energy from the environment as a sustainable power source, have attracted great attention. Currently, many reports focus on the effect of surface modification on the electrical output performance of the TENG. In this work, we have fabricated vertically grown ZnO microballoon (ZnOMB) arrays on top of pyramid-featured PDMS patterned film, contacted with PTFE film to construct the TENG. The electrical output performances of the designed TENG are presented under external forces with different frequencies. The corresponding output open-circuit voltage with ZnOMBs could reach about 57 V the current density about 59 mA m -2 at 100 Hz, which was about 2.3 times higher than without any ZnO. The global maximum of the instantaneous peak power could reach 1.1 W m -2 when the external load resistance was about 2 MΩ. Furthermore, the electrical output of the fabricated device could light 30 commercial LED bulbs without any rectifier circuits or energy-storage elements. This clearly suggests that this kind of surface modification can dramatically enhance the output performance of the TENG. Moreover, the design of TENG demonstrated here can be applied to various energy harvesting applications.
Enhanced performance of ZnO microballoon arrays for a triboelectric nanogenerator
NASA Astrophysics Data System (ADS)
Deng, Weili; Zhang, Binbin; Jin, Long; Chen, Yueqi; Chu, Wenjun; Zhang, Haitao; Zhu, Minhao; Yang, Weiqing
2017-03-01
In recent years, triboelectric nanogenerators (TENGs), harvesting energy from the environment as a sustainable power source, have attracted great attention. Currently, many reports focus on the effect of surface modification on the electrical output performance of the TENG. In this work, we have fabricated vertically grown ZnO microballoon (ZnOMB) arrays on top of pyramid-featured PDMS patterned film, contacted with PTFE film to construct the TENG. The electrical output performances of the designed TENG are presented under external forces with different frequencies. The corresponding output open-circuit voltage with ZnOMBs could reach about 57 V the current density about 59 mA m-2 at 100 Hz, which was about 2.3 times higher than without any ZnO. The global maximum of the instantaneous peak power could reach 1.1 W m-2 when the external load resistance was about 2 MΩ. Furthermore, the electrical output of the fabricated device could light 30 commercial LED bulbs without any rectifier circuits or energy-storage elements. This clearly suggests that this kind of surface modification can dramatically enhance the output performance of the TENG. Moreover, the design of TENG demonstrated here can be applied to various energy harvesting applications.
Cheng, Jingsi; Wang, Ping; Hua, Chao; Yang, Yintang; Zhang, Zhiyong
2018-03-12
The structural stability, electronic structure, and optical properties of an iron-adsorbed ZnO (0001) surface with three high-symmetry adsorption sites are investigated with first-principle calculations on the basis of density functional theory and the Hubbard-U method. It is found that the iron adatom in the H₃ adsorption site of ZnO (0001) surface has the lowest adsorption energy of -5.665 eV compared with T₄ and Top sites. For the Top site, compared with the pristine ZnO (0001) surface, the absorption peak located at 1.17 eV has a red shift, and the elevation of the absorption coefficient is more pronounced in the visible-light region, because the Fe-related levels are introduced in the forbidden band and near the Fermi level. The electrostatic potential computation reveals that the work function of the ZnO (0001) surface is significantly decreased from 2.340 to 1.768 eV when iron is adsorbed on the Top site. Furthermore, the degradation mechanism based on the band structure is analyzed. It can be concluded that the adsorption of iron will promote the separation of photoinduced carriers, thus improving the photocatalytic activity of ZnO (0001) surface. Our study benefits research on the photocatalytic activity of ZnO and the utilization rate of solar energy.
A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes
NASA Astrophysics Data System (ADS)
Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun
2018-01-01
ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.
NASA Astrophysics Data System (ADS)
Yatskiv, R.; Grym, J.
2018-03-01
We show that the interaction between graphite and polar surfaces of ZnO affects electrical properties of graphite/ZnO Schottky junctions. A strong interaction of the Zn-face with the graphite contact causes interface imperfections and results in the formation of laterally inhomogeneous Schottky contacts. On the contrary, high quality Schottky junctions form on the O-face, where the interaction is significantly weaker. Charge transport through the O-face ZnO/graphite junctions is well described by the thermionic emission model in both forward and reverse directions. We further demonstrate that the parameters of the graphite/ZnO Schottky diodes can be significantly improved when a thin layer of ZnO2 forms at the interface between graphite and ZnO after hydrogen peroxide surface treatment.
NASA Astrophysics Data System (ADS)
Shu, Zhan; Zhang, Yi; Yang, Qian; Yang, Huaming
2017-02-01
Novel antimicrobial nanocomposite incorporating halloysite nanotubes (HNTs) and silver (Ag) into zinc oxide (ZnO) nanoparticles is prepared by integrating HNTs and decorating Ag nanoparticles. ZnO nanoparticles (ZnO NPs) and Ag nanoparticles (Ag NPs) with a size of about 100 and 8 nm, respectively, are dispersively anchored onto HNTs. The synergistic effects of ZnO NPs, Ag NPs, and HNTs led to the superior antibacterial activity of the Ag-ZnO/HNTs antibacterial nanocomposites. HNTs facilitated the dispersion and stability of ZnO NPs and brought them in close contact with bacteria, while Ag NPs could promote the separation of photogenerated electron-hole pairs and enhanced the antibacterial activity of ZnO NPs. The close contact with cell membrane enabled the nanoparticles to produce the increased concentration of reactive oxygen species and the metal ions to permeate into the cytoplasm, thus induced quick death of bacteria, indicating that Ag-ZnO/HNTs antibacterial nanocomposite is a promising candidate in the antibacterial fields.
Bipolar charge storage characteristics in copper and cobalt co-doped zinc oxide (ZnO) thin film.
Kumar, Amit; Herng, Tun Seng; Zeng, Kaiyang; Ding, Jun
2012-10-24
The bipolar charge phenomenon in Cu and Co co-doped zinc oxide (ZnO) film samples has been studied using scanning probe microscopy (SPM) techniques. Those ZnO samples are made using a pulsed laser deposition (PLD) technique. It is found that the addition of Cu and Co dopants suppresses the electron density in ZnO and causes a significant change in the work function (Fermi level) value of the ZnO film; this results in the ohmic nature of the contact between the electrode (probe tip) and codoped sample, whereas this contact exhibits a Schottky nature in the undoped and single-element-doped samples. These results are verified by Kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) measurements. It is also found that the co-doping (Cu and Co) can stabilize the bipolar charge, whereas Cu doping only stabilizes the positive charge in ZnO thin films.
Su, Ting; Zhang, Haifeng
2017-01-01
Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on the voltage and duration applied to the copper-doped ZnO films by Kelvin probe force microscopy. It is found that the Fermi Level of the 8 at.% Cu-doped ZnO films shifted by 0.53 eV comparing to undoped ZnO films. This shift indicates significant change in the electronic structure and energy balance in Cu-doped ZnO films. The Fermi Level (work function) of zinc oxide films can be tuned by Cu doping, which are important for developing this functional material. In addition, Kelvin probe force microscopy measurements demonstrate that the nature of contact at Pt-coated tip/ZnO:Cu interface is changed from Schottky contact to Ohmic contact by increasing sufficient amount of Cu ions. The charge trapping property of the ZnO films enhance greatly by Cu doping (~10 at.%). The improved stable bipolar charge trapping properties indicate that copper-doped ZnO films are promising for nonvolatile memory applications. PMID:28135335
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Lien, C.
2015-05-15
Five different kinds of insulators including BaTiO{sub 3}, TiO{sub 2}, Al{sub 2}O{sub 3}, CdO and ZnO on the n-type InGaAs metal-insulator-semiconductor (M-I-S) ohmic contact structure are studied. The effect for the dielectric constant (ε) of inserted insulator and the conduction band offset (CBO) between an insulator and semiconductor substrate is analyzed by a unified M-I-S contact model. Based on the theoretical model and experimental data, we demonstrates that the inserted ZnO insulator with the high electron affinity and the low CBO (∼0.1 eV) to the InGaAs substrate results in ∼10 times contact resistivity reduction, even the ε of ZnO ismore » not pretty high (∼10)« less
NASA Astrophysics Data System (ADS)
Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun
2015-03-01
Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.
Cd1-xZnxTe photodetectors with transparent conductive ZnO contacts
NASA Astrophysics Data System (ADS)
Tang, Ke; Huang, Jian; Lu, Yuanxi; Hu, Yan; Shen, Yibin; Zhang, Jijun; Gu, Qingmiao; Wang, Linjun; Lu, Yicheng
2018-03-01
High quality Cd1-xZnxTe (CZT) films were prepared using the close-spaced sublimation (CSS) technique. CZT film UV (ultraviolet) photodetectors were fabricated with B and Ga co-doped ZnO (BGZO) transparent conductive interdigitated contacts. The contact properties of BGZO/CZT were investigated by the transmission line model (TLM). The results indicate that a good ohmic contact is formed between BGZO and CZT with a very low contact resistivity of about 0.26 Ω·cm2. Compared with CZT photodetectors with Au contacts, the detectors with BGZO contacts show a higher value of UV photo response.
Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films
DOE Office of Scientific and Technical Information (OSTI.GOV)
Santos, Daniel A.A., E-mail: danielandrade.ufs@gmail.com; Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260; Zeng, Hao
2015-06-15
Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using amore » shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.« less
Suresh Kumar, P; Sundaramurthy, J; Mangalaraj, D; Nataraj, D; Rajarathnam, D; Srinivasan, M P
2011-11-01
A simple and cost-effective successive ionic layer adsorption and reaction (SILAR) method was adopted to fabricate hydrophobic ZnO nanostructured surfaces on transparent indium-tin oxide (ITO), glass and polyethylene terephthalate (PET) substrates. ZnO films deposited on different substrates show hierarchical structures like spindle, flower and spherical shape with diameters ranging from 30 to 300 nm. The photo-induced switching behaviors of ZnO film surfaces between hydrophobic and hydrophilic states were examined by water contact angle and X-ray photoelectron spectroscopy (XPS) analysis. ZnO nanostructured films had contact angles of ~140° and 160°±2 on glass and PET substrates, respectively, exhibiting hydrophobic behavior without any surface modification or treatment. Upon exposure to ultraviolet (UV) illumination, the films showed hydrophilic behavior (contact angle: 15°±2), which upon low thermal stimuli revert back to its original hydrophobic nature. Such reversible and repeatable switching behaviors were observed upon cyclical exposure to ultraviolet radiation. These biomimetic ZnO surfaces exhibit good anti-reflective properties with lower reflectance of 9% for PET substrates. Thus, the present work is significant in terms of its potential application in switching devices, solar coatings and self-cleaning smart windows. Copyright © 2011 Elsevier Inc. All rights reserved.
Electrostatically Gated Graphene-Zinc Oxide Nanowire Heterojunction.
You, Xueqiu; Pak, James Jungho
2015-03-01
This paper presents an electrostatically gated graphene-ZnO nanowire (NW) heterojunction for the purpose of device applications for the first time. A sub-nanometer-thick energy barrier width was formed between a monatomic graphene layer and electrochemically grown ZnO NWs. Because of the narrow energy barrier, electrons can tunnel through the barrier when a voltage is applied across the junction. A near-ohmic current-voltage (I-V) curve was obtained from the graphene-electrochemically grown ZnO NW heterojunction. This near-ohmic contact changed to asymmetric I-V Schottky contact when the samples were exposed to an oxygen environment. It is believed that the adsorbed oxygen atoms or molecules on the ZnO NW surface capture free electrons of the ZnO NWs, thereby creating a depletion region in the ZnO NWs. Consequentially, the electron concentration in the ZnO NWs is dramatically reduced, and the energy barrier width of the graphene-ZnO NW heterojunction increases greatly. This increased energy barrier width reduces the electron tunneling probability, resulting in a typical Schottky contact. By adjusting the back-gate voltage to control the graphene-ZnO NW Schottky energy barrier height, a large modulation on the junction current (on/off ratio of 10(3)) was achieved.
Reversible superhydrophobic-superhydrophilic transition of ZnO nanorod/epoxy composite films.
Liu, Yan; Lin, Ziyin; Lin, Wei; Moon, Kyoung Sik; Wong, C P
2012-08-01
Tuning the surface wettability is of great interest for both scientific research and practical applications. We demonstrated reversible transition between superhydrophobicity and superhydrophilicity on a ZnO nanorod/epoxy composite film. The epoxy resin serves as an adhesion and stress relief layer. The ZnO nanorods were exposed after oxygen reactive ion etching of the epoxy matrix. A subsequent chemcial treatment with fluoroalkyl and alkyl silanes resulted in a superhydrophobic surface with a water contact angle up to 158.4° and a hysteresis as low as 1.3°. Under UV irradiation, the water contact angle decreased gradually, and the surface eventually became superhydrophilic because of UV induced decomposition of alkyl silanes and hydroxyl absorption on ZnO surfaces. A reversible transition of surface wettability was realized by alternation of UV illumination and surface treatment. Such ZnO nanocomposite surface also showed improved mechanical robustness.
Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment
NASA Astrophysics Data System (ADS)
Gu, Q. L.; Cheung, C. K.; Ling, C. C.; Ng, A. M. C.; Djurišić, A. B.; Lu, L. W.; Chen, X. D.; Fung, S.; Beling, C. D.; Ong, H. C.
2008-05-01
Au contacts were deposited on n-type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2O2 pretreatment were Ohmic and those with H2O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of ˜10-7 A cm-2. A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature.
Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang
2013-04-07
Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.
NASA Astrophysics Data System (ADS)
Velayi, Elmira; Norouzbeigi, Reza
2018-05-01
Superhydrophobic ZnO surfaces with reversibly tunable wettability were fabricated on stainless steel meshes via a facile chemical bath deposition method just by regulating the micro/nano structured ZnO needles without using chemical post modifications. The obtained surfaces can be easily and reversibly switched between superhydrophobic and superhydrophilic/underwater superoleophobic characteristics by altering the annealing temperatures. As-prepared sample exhibited long-term superhydrophobic properties with a water contact angle (WCA) of 163.8° ± 1.8° and contact angle hysteresis (CAH) of 1.1° ± 0.8°. The SEM, XRD, XPS and Raman analyses were employed to characterize the morphological features and surface chemistry of the prepared samples. SEM images showed the formation of ZnO micro/nanoneedles with a diameter of ∼90 nm on the substrate. The superhydrophobic ZnO surface was switched to highly hydrophilic and underwater superoleophobic properties with an oil contact angle (OCA) of about 172.5° after being annealed at 400 °C in air for 30 min and restored to superhydrophobic state again by altering the annealing temperature to 150 °C. Mechanical durability of the ZnO superhydrophobic surface was tested by an abrasion test. Results confirmed that the prepared surface exhibited an excellent robustness after 20 abrasion cycles under the pressure of 4.7 kPa.
Energy Conversion: Nano Solar Cell
NASA Astrophysics Data System (ADS)
Yahaya, Muhammad; Yap, Chi Chin; Mat Salleh, Muhamad
2009-09-01
Problems of fossil-fuel-induced climate change have sparked a demand for sustainable energy supply for all sectors of economy. Most laboratories continue to search for new materials and new technique to generate clean energy at affordable cost. Nanotechnology can play a major role in solving the energy problem. The prospect for solar energy using Si-based technology is not encouraging. Si photovoltaics can produce electricity at 20-30 c//kWhr with about 25% efficiency. Nanoparticles have a strong capacity to absorb light and generate more electrons for current as discovered in the recent work of organic and dye-sensitized cell. Using cheap preparation technique such as screen-printing and self-assembly growth, organic cells shows a strong potential for commercialization. Thin Films research group at National University Malaysia has been actively involved in these areas, and in this seminar, we will present a review works on nanomaterials for solar cells and particularly on hybrid organic solar cell based on ZnO nanorod arrays. The organic layer consisting of poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEHPPV) and [6, 6]-phenyl C61-butyric acid 3-ethylthiophene ester (PCBE) was spin-coated on ZnO nanorod arrays. ZnO nanorod arrays were grown on FTO glass substrates which were pre-coated with ZnO nanoparticles using a low temperature chemical solution method. A gold electrode was used as the top contact. The device gave a short circuit current density of 2.49×10-4 mA/cm2 and an open circuit voltage of 0.45 V under illumination of a projector halogen light at 100 mW/cm2.
Antibacterial effect of zinc oxide/hydroxyapatite coatings prepared by chemical solution deposition
NASA Astrophysics Data System (ADS)
Ohtsu, Naofumi; Kakuchi, Yuko; Ohtsuki, Tsubasa
2018-07-01
In the present study, we introduce a newly designed antibacterial hydroxyapatite (Ca10(PO4)6(OH)2, HAp) coating that exploits the contact killing capabilities of ZnO. The HAp coating, incorporating ZnO precipitates on its topmost surface layer, was prepared on a Ti substrate using chemical solution deposition followed by heating at 650 °C. The amount of ZnO precipitates could be controlled by changing the ZnO concentration in the deposition solution; furthermore, the Zn release rate from the surface could be controlled by varying the ZnO amount. The ZnO/HAp coating showed excellent antibacterial efficacy against Escherichia coli and Staphylococcus epidermidis strains; however, no correlation was observed between the degree of efficacy and Zn release rate. The antibacterial efficacy of the ZnO/HAp coating likely originates from the contact killing effect of the ZnO precipitates. In summary, the coatings introduced in this work are promising candidates for the surface modification of Ti implants, with a potential ability to combine the prevention of infectious diseases with osteogenic activity.
Mesoporous single-crystal ZnO nanobelts: supported preparation and patterning.
Nasi, Lucia; Calestani, Davide; Fabbri, Filippo; Ferro, Patrizia; Besagni, Tullo; Fedeli, Paolo; Licci, Francesca; Mosca, Roberto
2013-02-07
We demonstrate that highly porous ZnO nanobelts can be prepared by thermally decomposing ZnS(en)(0.5) hybrid nanobelts (NBs) synthesized through a solvothermal route using Zn layers deposited on alumina substrates as both the Zn substrate and source. Hybrid decomposition by thermal annealing at 400 °C gives porous ZnS NBs that are transformed by further annealing at 600 °C into wurtzite single crystal ZnO nanobelts with an axial direction of [0001]. The evolution of the morphological and structural transformation ZnS(en)(0.5)→ ZnS → ZnO is investigated at the nanoscale by transmission and scanning electron microscopy analyses. Control of the ZnO NB distributions by patterning the Zn metallization on alumina is achieved as a consequence of the parent hybrid NB patterned growth. The presence of NBs on alumina in a ∼100 μm wide region between Zn stripes allows us to fabricate two contact devices where contact pads are electrically connected through a porous ZnO NB entanglement. Such devices are suitable for employment in photodetectors as well as in gas and humidity sensors.
1-dimension nano-material-based flexible device
NASA Astrophysics Data System (ADS)
Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong
2009-11-01
1D nano-material-based flexible devices has attracted considerable attention owing to the growing need of the high-sensitivity flexible sensor, portable consumer electronics etc.. In this paper, the 1D nano-materials-based flexible device on polyimide substrate was proposed. The bottom-up and top-down combined process were used for constructing the ZnO nanowire and the CNT-based flexible devices. Their electrical characteristics were also investigated. The measurement results demonstrate that the flexible device covered with a layer of Al2O3 has good ohm electrical contact behavior between the nano-material and micro-electrodes. The proposed 1D nano-material-based flexible device shows the application potential in the sensing fields.
Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates
Hasan, Md Rezaul; Xie, Ting; Barron, Sara C.; Liu, Guannan; Nguyen, Nhan V.; Motayed, Abhishek; Rao, Mulpuri V.; Debnath, Ratan
2016-01-01
A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated. PMID:26900532
Abdollahi Nejand, B; Nazari, P; Gharibzadeh, S; Ahmadi, V; Moshaii, A
2017-01-05
Here, a low-cost perovskite solar cell using CuI and ZnO as the respective inorganic hole and electron transport layers is introduced. Copper foil is chosen as a cheap and low-weight conductive substrate which has a similar work function to ITO. Besides, copper foil is an interesting copper atom source for the growth of the upper cuprous iodide layer on copper foil. A spray coating of a transparent silver nanowire electrode is used as a top contact. The prepared device shows a maximum power conversion efficiency of 12.80% and long-term durability providing an environmentally and market friendly perovskite solar cell.
High transconductance zinc oxide thin-film transistors on flexible plastic substrates
NASA Astrophysics Data System (ADS)
Kimura, Yuta; Higaki, Tomohiro; Maemoto, Toshihiko; Sasa, Shigehiko; Inoue, Masataka
2012-02-01
We report the fabrication and characterization on high-performance ZnO based TFTs on unheated plastic substrate. ZnO films were grown by pulsed laser deposition (PLD) on polyethylene napthalate (PEN) substrates. Top-gate ZnO-TFTs were fabricated by photolithography and wet chemical etching. The source and drain contacts were formed by lift-off of e-beam deposited Ti(20 nm)/Au(200 nm). An HfO2 with thickness 100 nm was selected as the gate insulator, and top gate electrode Ti(20 nm)/Au(200 nm) was deposited by e-beam evaporation. We prepared a set of the structure with SiO2/TiO2 to investigate the characteristic changes that appear in the film characteristics in response to bending. From the ID-VDS and the transfer characteristics which are affected by bending and return for the ZnO-TFT with SiO2/TiO2 buffers, the TFTs were bent to a curvature radius of 8.5 mm. The transconductance, gm is obtained 1.7 mS/mm on flat, 1.4 mS/mm on bending and 1.3 mS/mm on returning the film, respectively. The ID-VDS characteristics were therefore not changed by bending. All of the devices exhibited a clear pinch-off behavior and a high on/off current ratio of ˜10^6. The threshold voltages, Vth were not changed drastically. Furthermore, TFT structures were changed from a conventional top-gate type to a bottom-gate type. A high transconductance of 95.8 mS/mm was achieved in the bottom-gate type TFT by using Al2O3 oxide buffer.
NASA Astrophysics Data System (ADS)
Nedic, Stanko; Tea Chun, Young; Hong, Woong-Ki; Chu, Daping; Welland, Mark
2014-01-01
A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ˜16.5 V, a high drain current on/off ratio of ˜105, a gate leakage current below ˜300 pA, and excellent retention characteristics for over 104 s.
Transparent ZnO-based ohmic contact to p-GaN
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kaminska, E.; Piotrowska, A.; Golaszewska, K.
2002-04-09
Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of {approx}1 x 10{sup -3} {Omega}cm and resulted in ohmic contacts of resistivity {approx}1 x 10{sup -2} {Omega}cm{sup 2} to low-doped p-GaN, and light transmittance of {approx}75% in the wavelength range of 400-700 nm.
Preparation, characterization and properties of ZnO nanomaterials
NASA Astrophysics Data System (ADS)
Luo, Jiaolian; Zhang, Xiaoming; Chen, Ruxue; Wang, Xiaohui; Zhu, Ji; Wang, Xiaomin
2017-06-01
In this paper, using the hydrothermal synthesis method, NaOH, Zn(NO3)2, anhydrous ethanol, deionized water as raw material to prepare ZnO nanomaterial, and by X ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL) on the synthesis of nano materials, surface morphology and phase luminescence characterization. The results show that the nano materials synthesized for single-phase ZnO, belonging to the six wurtzite structure; material surface shaped, arranged evenly distributed, and were the top six party structure; ZnO nano materials synthesized with strong emission spectra, emission peak is located at 394nm.
Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO
NASA Astrophysics Data System (ADS)
McCandless, Jonathan P.; Leedy, Kevin D.; Schuette, Michael L.
2018-02-01
The goal is to gain additional insight into physical mechanisms and the role of microstructure on the formation of ohmic contacts and the reduction of contact resistance. We have measured a decreasing film resistivity in the vertical direction with increasing thickness of pulsed-laser deposited ZnO and IGZO. As the ZnO thickness increases from 122 nm to 441 nm, a reduction in resistivity from 3.29 Ω-cm to 0.364 Ω-cm occurred. The IGZO resistivity changes from 72.4 Ω-cm to 0.642 Ω-cm as the film is increased from 108nm to 219 nm. In the ZnO, the size of nanocolumnar grains increase with thickness resulting in fewer grain boundaries, and in the amorphous IGZO, the thicker region exhibits tunnel-like artifacts which may contribute to the reduced resistivity.
Defect study in ZnO related structures—A multi-spectroscopic approach
NASA Astrophysics Data System (ADS)
Ling, C. C.; Cheung, C. K.; Gu, Q. L.; Dai, X. M.; Xu, S. J.; Zhu, C. Y.; Luo, J. M.; Zhu, C. Y.; Tam, K. H.; Djurišić, A. B.; Beling, C. D.; Fung, S.; Lu, L. W.; Brauer, G.; Anwand, W.; Skorupa, W.; Ong, H. C.
2008-10-01
ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/ n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure.
Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk; Hussain, Zakir; Mujahid, Mohammad
Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedancemore » spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.« less
Structural, surface wettability and antibacterial properties of HPMC-ZnO nanocomposite
DOE Office of Scientific and Technical Information (OSTI.GOV)
Rao, B. Lakshmeesha; Asha, S.; Madhukumar, R.
The developed hydroxypropyl methylcellulose (HPMC)/Zinc oxide (ZnO) nanocomposite films were examined for structural property and surface wettability using X-ray diffraction and contact angle measurement. Antibacterial activity of these films was evaluated as a function of ZnO concentration. The microstructuralline parameters ( and (g in %)) decreased with increasing concentration of ZnO nanoparticles and there was increase in hydrophilicity. Addition of ZnO nanoparticles in films resulted in antimicrobial activity against tested microorganisms.
Surface plasmon optical sensor with enhanced sensitivity using top ZnO thin film
NASA Astrophysics Data System (ADS)
Bao, Ming; Li, Ge; Jiang, Dongmei; Cheng, Wenjuan; Ma, Xueming
2012-05-01
Surface plasmon resonance (SPR) is one of the most sensitive label-free detection methods and has been used in a wide range of chemical and biochemical sensing. Upon using a 200 nm top layer of dielectric film with a high value of the real part ɛ' of the dielectric function, on top of an SPR sensor in the Kretschmann configuration, the sensitivity is improved. The refractive index effect of dielectric film on sensitivity is usually ignored. Dielectric films with different refractive indices were prepared by radio frequency magnetron (RF) sputtering and measured with spectroscopic ellipsometry (SE). The imaginary part ɛ'' of the top nanolayer permittivity needs to be small enough in order to reduce the losses and get sharper dips. The stability of the sensor is also improved because the nanolayer is protecting the Ag film from interacting with the environment. The response curves of the Ag/ZnO chips were obtained by using SPR sensor. Theoretical analysis of the sensitivity of the SPR sensors with different ZnO film refractive indices is presented and studied. Both experimental and simulation results show that the Ag/ZnO films exhibit an enhanced SPR over the pure Ag film with a narrower full width at half maximum (FWHM). It shows that the top ZnO layer is effective in enhancing the surface plasmon resonance and thus its sensitivity.
The impact of nanocontact on nanowire based nanoelectronics.
Lin, Yen-Fu; Jian, Wen-Bin
2008-10-01
Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.
NASA Astrophysics Data System (ADS)
Rodriguez, JoséA.
1989-11-01
The chemisorptions of methyl (CH 3), acetylide (H-CC), chlorine (Cl) and phosphorus trifluoride (PF 3) on ZnO(0001) and of Cl on ZnO(101¯0) have been examined employing semi-em- pirical quantum-chemical calculations (INDO/S) and neutral clusters of limited size (Zn 13O 13). CH 3, H-CC and Cl appear as strong electron acceptors when adsorbed on Zn sites of ZnO. The chemisorption bonds of these molecules are almost pure σ-bonds and are largely localized on the adsorption site. An increase in the work function of ZnO surfaces upon adsorption of CH 3, H-CC and Cl is predicted. The PF 3 molecule is a very weak acceptor of electrons when adsorbed on a-top sites of ZnO(0001). The bonding mechanism of CH 3, H-CC, Cl and PF 3 on the ZnO(0001) surface involves primarily the HOMO and LUMO of the adsorbate and the Zn(4s,4p) orbitals of the substrate. The effects of chemisorption on the C-H bonds of CH 3 and H-CC, the C-C bond of H-CC, and the P-F bonds of PF 3 are examined. On the basis of these INDO/S results, the possible UPS spectra for CH 3, H-CC and PF 3 adsorbed on ZnO(0001) are discussed and compared with results for adsorption on transition-metal surfaces. A general picture of the chemisorption bond of alkyls, acetylides, alkoxides, carboxylates and halogens on a-top sites of ZnO(0001) is obtained by comparing our results for adsorption of CH 3, H-CC and Cl with those previously reported for adsorption of methoxy, OH and formate.
NASA Astrophysics Data System (ADS)
Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi
2018-04-01
Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.
NASA Astrophysics Data System (ADS)
Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang; Gul, Rubi; Hossain, Anwar; Yang, Ge; James, Ralph B.; Pradhan, Aswini K.; Mundle, Rajeh
2016-09-01
Aluminum (Al) doped ZnO with very high Al concentration acts as metal regarding its electrical conductivity. ZnO offers many advantages over the commonly-known metals being used today as electrode materials for nuclear detector fabrication. Often, the common metals show poor adhesion to CdZnTe or CdTe surfaces and have a tendency to peel off. In addition, there is a large mismatch of the coefficients of thermal expansion (CTE) between the metals and underlying CdZnTe, which is one of the reasons for mechanical degradation of the contact. In contrast ZnO has a close match of the CTE with CdZnTe and possesses 8-20 times higher hardness than the commonly-used metals. In this presentation, we will explore and discuss the properties of CdZnTe detectors with ZnO:Al contacts.
Growth of antimony doped P-type zinc oxide nanowires for optoelectronics
Wang, Zhong Lin; Pradel, Ken
2016-09-27
In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.
Investigation into the effects of surface stripping ZnO nanosheets.
Barnett, Chris J; Jackson, Georgina; Jones, Daniel R; Lewis, Aled R; Welsby, Kathryn; Evans, Jon E; McGettrick, James D; Watson, Trystan; Maffeis, Thierry G G; Dunstan, Peter R; Barron, Andrew R; Cobley, Richard J
2018-04-20
ZnO nanosheets are polycrystalline nanostructures that are used in devices including solar cells and gas sensors. However, for efficient and reproducible device operation and contact behaviour the conductivity characteristics must be controlled and surface contaminants removed. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanosheets altering the contact type from near-ohmic to rectifying by removing the donor-type defects, which photoluminescence shows to be concentrated in the near-surface. Controlled doses of argon treatments allow nanosheets to be customised for device formation.
Investigation into the effects of surface stripping ZnO nanosheets
NASA Astrophysics Data System (ADS)
Barnett, Chris J.; Jackson, Georgina; Jones, Daniel R.; Lewis, Aled R.; Welsby, Kathryn; Evans, Jon E.; McGettrick, James D.; Watson, Trystan; Maffeis, Thierry G. G.; Dunstan, Peter R.; Barron, Andrew R.; Cobley, Richard J.
2018-04-01
ZnO nanosheets are polycrystalline nanostructures that are used in devices including solar cells and gas sensors. However, for efficient and reproducible device operation and contact behaviour the conductivity characteristics must be controlled and surface contaminants removed. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanosheets altering the contact type from near-ohmic to rectifying by removing the donor-type defects, which photoluminescence shows to be concentrated in the near-surface. Controlled doses of argon treatments allow nanosheets to be customised for device formation.
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts.
Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang
2017-12-01
Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10 -2 Ω·cm 2 . Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
NASA Astrophysics Data System (ADS)
Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang
2017-07-01
Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.
Creation of hydrophobic surfaces using a paint containing functionalized oxide particles
NASA Astrophysics Data System (ADS)
Sino, Paul Albert L.; Herrera, Marvin U.; Balela, Mary Donnabelle L.
2017-05-01
Hydrophobic surfaces were created by coating various substrates (aluminum sheet, soda-lime glass, silicon carbide polishing paper, glass with double-sided adhesive) with paint containing functionalized oxide particles. The paint was created by functionalizing oxide particles (ground ZnO, TiO2 nanoparticles, or TiO2 microparticles) with fluorosilane molecules in absolute ethanol. Water contact angle of samples shows that the coated substrate becomes hydrophobic (water contact angle ≥ 90°). Among the oxides that were used, ground ZnO yielded contact angle exemplifying superhydrophobicity (water contact angle ≥ 150°). Scanning electron micrograph of paint-containing TiO2 nanoparticles shows rough functionalized oxides structures which probably increase the hydrophobicity of the surface.
A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.
Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan
2014-02-07
High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.
Air stable organic-inorganic nanoparticles hybrid solar cells
Qian, Lei; Yang, Jihua; Xue, Jiangeng; Holloway, Paul H.
2015-09-29
A solar cell includes a low work function cathode, an active layer of an organic-inorganic nanoparticle composite, a ZnO nanoparticle layer situated between and physically contacting the cathode and active layers; and a transparent high work function anode that is a bilayer electrode. The inclusion of the ZnO nanoparticle layer results in a solar cell displaying a conversion efficiency increase and reduces the device degradation rate. Embodiments of the invention are directed to novel ZnO nanoparticles that are advantageous for use as the ZnO nanoparticle layers of the novel solar cells and a method to prepare the ZnO nanoparticles.
Growth of bulk ZnO crystals by self-selecting CVT method
NASA Astrophysics Data System (ADS)
Fan, Long; Jiang, Tao; Xiao, TingTing; Chen, Jie; Peng, Liping; Wang, Xuemin; Yan, Dawei; Wu, Weidong
2018-05-01
Bulk ZnO crystals were grown by self-selecting CVT method using carbon as the transport agent. The crystal growth process took place on the top of the polycrystalline source material, and deep-red colored ZnO crystals of several millimeters were obtained. The as-grown crystals were characterized by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman scattering (RS) spectroscopy, visible-near infrared (VIS-NIR) spectrophotometer and room temperature photoluminescence (PL) spectroscopy. XRD results indicate good crystallinity of the ZnO crystal. The EDS analysis shows that the crystal has a stoichiometry ratio Zn: O = 52: 48. The results suggest the existence of native defects of oxygen vacancies (OV) in the as-grown ZnO samples, which is caused by the stoichiometry shift to Zn-rich.
Ferroelectric enhancement in heterostructured ZnO /BiFeO3-PbTiO3 film
NASA Astrophysics Data System (ADS)
Yu, Shengwen; Chen, Rui; Zhang, Guanjun; Cheng, Jinrong; Meng, Zhongyan
2006-11-01
The authors have prepared heterostructured ZnO /BiFeO3-PbTiO3 (BFO-PT) composite film and BFO-PT film on Pt /Ti/SiO2/Si substrates by pulsed-laser deposition. The structure and morphologies of the films were characterized by x-ray diffraction (XRD) and scanning electron microscope. XRD results show that both films are perovskite structured last with different orientations. The leakage current density in the ZnO /BFO-PT film was found to be nearly two orders of magnitude lower. This could be due to the introduced ZnO layer behaving as a Schottky barrier between the BFO-PT film and top electrodes. The dramatic ferroelectric enhancement in ZnO /BFO-PT film is mostly ascribed to the improved insulation.
NASA Astrophysics Data System (ADS)
Oh, Min-Suk
2018-04-01
We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.
Superhydrophobic surfaces using selected zinc oxide microrod growth on ink-jetted patterns.
Myint, Myo Tay Zar; Kitsomboonloha, Rungrot; Baruah, Sunandan; Dutta, Joydeep
2011-02-15
The synthesis and properties of superhydrophobic surfaces based on binary surface topography made of zinc oxide (ZnO) microrod-decorated micropatterns are reported. ZnO is intrinsically hydrophilic but can be utilized to create hydrophobic surfaces by creating artificial roughness via microstructuring. Micron scale patterns consisting of nanocrystalline ZnO seed particles were applied to glass substrates with a modified ink-jet printer. Microrods were then grown on the patterns by a hydrothermal process without any further chemical modification. Water contact angle (WCA)(1) up to 153° was achieved. Different micro array patterned surfaces with varying response of static contact angle or sessile droplet analysis are reported. Copyright © 2010 Elsevier Inc. All rights reserved.
NASA Astrophysics Data System (ADS)
Srivastava, Amar; Herng, T. S.; Saha, Surajit; Nina, Bao; Annadi, A.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Ariando; Ding, J.; Venkatesan, T.
2012-06-01
We have investigated the photoluminescence and electrical properties of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire across the phase transition of VO2. The band edge and defect luminescence of the ZnO overlayer exhibit hysteresis in opposite directions induced by the phase transition of VO2. Concomitantly the phase transition of VO2 was seen to induce defects in the ZnO layer. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces in situ and also for novel device application.
Superhydrophobic Surface Based on a Coral-Like Hierarchical Structure of ZnO
Wu, Jun; Xia, Jun; Lei, Wei; Wang, Baoping
2010-01-01
Background Fabrication of superhydrophobic surfaces has attracted much interest in the past decade. The fabrication methods that have been studied are chemical vapour deposition, the sol-gel method, etching technique, electrochemical deposition, the layer-by-layer deposition, and so on. Simple and inexpensive methods for manufacturing environmentally stable superhydrophobic surfaces have also been proposed lately. However, work referring to the influence of special structures on the wettability, such as hierarchical ZnO nanostructures, is rare. Methodology This study presents a simple and reproducible method to fabricate a superhydrophobic surface with micro-scale roughness based on zinc oxide (ZnO) hierarchical structure, which is grown by the hydrothermal method with an alkaline aqueous solution. Coral-like structures of ZnO were fabricated on a glass substrate with a micro-scale roughness, while the antennas of the coral formed the nano-scale roughness. The fresh ZnO films exhibited excellent superhydrophilicity (the apparent contact angle for water droplet was about 0°), while the ability to be wet could be changed to superhydrophobicity after spin-coating Teflon (the apparent contact angle greater than 168°). The procedure reported here can be applied to substrates consisting of other materials and having various shapes. Results The new process is convenient and environmentally friendly compared to conventional methods. Furthermore, the hierarchical structure generates the extraordinary solid/gas/liquid three-phase contact interface, which is the essential characteristic for a superhydrophobic surface. PMID:21209931
Optical absorption enhancement by inserting ZnO optical spacer in plasmonic organic solar cells
NASA Astrophysics Data System (ADS)
N'Konou, Kekeli; Torchio, Philippe
2018-01-01
Optical absorption enhancement (AE) using coupled optical spacer and plasmonic effects in standard and inverted organic solar cells (OSCs) are demonstrated using the finite-difference time-domain numerical method. The influence of an added zinc oxide (ZnO) optical spacer layer inserted below the active layer in standard architecture is first theoretically investigated while the influence of varying the ZnO cathodic buffer layer thickness in inverted design is studied on AE. Then, the embedding of a square periodic array of core-shell silver-silica nanospheres (Ag@SiO2 NSs) at different positions in standard and inverted OSCs is performed while AE and short-circuit current density (Jsc) are calculated. As a result of previous combined effects, the optimized standard plasmonic OSCs present 15% and 79.45% enhancement in J over the reference with and without ZnO optical spacer layer, respectively, and a 16% increase of AE when Ag@SiO2 NSs are placed on top of the PEDOT:PSS layer. Compared to the inverted OSC reference, the plasmonic OSCs present 26% and 27% enhancement in J and AE, respectively, when the Ag@SiO2 NSs are located on top of the ZnO layer. Furthermore, the spatial position of these NSs in such OSCs is a key parameter for increasing light absorption via enhanced electromagnetic field distribution.
NASA Astrophysics Data System (ADS)
Tian, Hongzheng; Wang, Xudong; Zhu, Yuankun; Liao, Lei; Wang, Xianying; Wang, Jianlu; Hu, Weida
2017-01-01
High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.
NASA Astrophysics Data System (ADS)
Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.
2015-11-01
The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.
Mauger, Scott A.; Steirer, K. Xerxes; Boe, Jonas; ...
2016-01-19
Here, this work focuses on the role of humidity in the formation of ZnO thin films from a reactive diethylzinc precursor solution for use as the electron contact layer (ECL) in organic photovoltaic (OPV) devices. This method is well suited for flexible devices because the films are annealed at 120 °C, making the process compatible with polymer substrates. ZnO films were prepared by spin coating and annealing at different relative humidity (RH) levels. It is found that RH during coating and annealing affects the chemical and physical properties of the ZnO films. Using x-ray photoelectron spectroscopy it is found thatmore » increasing RH during the formation steps produces a more stoichiometric oxide and a higher Zn/O ratio. Spectroscopic ellipsometry data shows a small decrease in the optical band gap with increased humidity, consistent with a more stoichiometric oxide. Kelvin probe measurements show that increased RH during formation results in a larger work function (i.e. further from vacuum). Consistent with these data, but counter to what might be expected, when these ZnO films are used as ECLs in OPV devices those with ZnO ECLs processed in low RH (less stoichiometric) had higher power conversion efficiency than those with high-RH processed ZnO due to improved open-circuit voltage. The increase in open-circuit voltage with decreasing humidity was observed with two different donor polymers and fullerene acceptors, which shows the trend is due to changes in ZnO. The observed changes in open-circuit voltage follow the same trend as the ZnO work function indicating that the increase in open-circuit voltage with decreasing humidity is the result of improved energetics at the interface between the bulk-heterojunction and the ZnO layer due to a vacuum level shift.« less
Electrical transport in AZO nanorods
NASA Astrophysics Data System (ADS)
Yildiz, A.; Cansizoglu, H.; Karabacak, T.
2015-10-01
Al-doped ZnO (AZO) nanorods (NRs) with different lengths were deposited by utilizing glancing angle deposition (GLAD) technique in a DC sputter system at room temperature. The structural and optical characteristics of the NRs were investigated by the X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis-NIR spectroscopy measurements. A band gap of about 3.5 eV was observed for the NRs. A novel capping process utilizing varying deposition angles was used to introduce a blanket metal top contact for the electrical characterization of NRs. Current-voltage (I-V) measurements were used to properly evaluate the approximate resistivity of a single NR. The electrical conduction was found to be governed by the thermally activated transport mechanism. Activation energy was determined as 0.14 eV from temperature dependent resistivity data.
The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd1-xZnxTe films
NASA Astrophysics Data System (ADS)
Shen, Yibin; Huang, Jian; Gu, Qingmiao; Meng, Hua; Tang, Ke; Shen, Yue; Zhang, Jijun; Wang, Linjun; Lu, Yicheng
2017-12-01
In this work, high quality Cd1-xZnxTe films were prepared on fluorine doped tin oxide (FTO) glass substrates by close-spaced sublimation (CSS) method. A low resistivity sputtered Ga-doped ZnO (GZO) film was used as an interlayer between Au electrodes and Cd1-xZnxTe films try to reduce the contact resistance and contribute to bring about a better Ohmic contact. Circular transmission line model (CTLM) was adopted to investigate the effects of GZO intermediate layer on the contact properties of Au/GZO/Cd1-xZnxTe structure. The results show a low contact resistivity of 0.37 Ω cm2 for Au/GZO contacts on Cd1-xZnxTe films. Cd1-xZnxTe film radiation detectors were also fabricated using Au/GZO contacts and an energy resolution of about 28% was obtained from a 60 KeV 241Am γ-ray source for the first time.
NASA Astrophysics Data System (ADS)
Kong, Bo Hyun; Han, Won Suk; Kim, Young Yi; Cho, Hyung Koun; Kim, Jae Hyun
2010-06-01
We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface.
Large-size porous ZnO flakes with superior gas-sensing performance
NASA Astrophysics Data System (ADS)
Wen, Wei; Wu, Jin-Ming; Wang, Yu-De
2012-06-01
A simple top-down route is developed to fabricate large size porous ZnO flakes via solution combustion synthesis followed by a subsequent calcination in air, which is template-free and can be easily enlarged to an industrial scale. The achieved porous ZnO flakes, which are tens to hundreds of micrometers in flat and tens of nanometers in thickness, exhibit high response for detecting acetone and ethanol, because the unique two-dimensional architecture shortens effectively the gas diffusion distance and provides highly accessible open channels and active surfaces for the target gas.
Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.
Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G
2015-07-27
In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.
Li, Pandeng; Jiu, Tonggang; Tang, Gang; Wang, Guojie; Li, Jun; Li, Xiaofang; Fang, Junfeng
2014-10-22
ZnO nanofilm as a cathode buffer layer has surface defects due to the aggregations of ZnO nanoparticles, leading to poor device performance of organic solar cells. In this paper, we report the ZnO nanoparticles aggregations in solution can be controlled by adjusting the solvents ratios (chloroform vs methanol). These aggregations could influence the morphology of ZnO film. Therefore, compact and homogeneous ZnO film can be obtained to help achieve a preferable power conversion efficiency of 8.54% in inverted organic solar cells. This improvement is attributed to the decreased leakage current and the increased electron-collecting efficiency as well as the improved interface contact with the active layer. In addition, we find the enhanced maximum exciton generation rate and exciton dissociation probability lead to the improvement of device performance due to the preferable ZnO dispersion. Compared to other methods of ZnO nanofilm fabrication, it is the more convenient, moderate, and effective to get a preferable ZnO buffer layer for high-efficiency organic solar cells.
Jiang, Yunhong; Zhang, Lingling; Wen, Dongsheng; Ding, Yulong
2016-12-01
Zinc oxide (ZnO) nanoparticles (NPs) exhibit antibacterial activity against both Gram-positive and Gram-negative bacteria. However, the antimicrobial mechanism of ZnO NPs remains unclear. In this study, we investigated the interactions among ZnO NPs, released chemicals (Zn(2+) and Reactive Oxygen Species, ROS) and Escherichia coli (E. coli) cells. ZnO NPs without contacting with bacterial cells showed strong antibacterial effect. The results of the leakage of intracellular K(+) and integrity of carboxyfluoresce in-filled liposomes showed that ZnO NPs have antimicrobial activity against E. coli by non-specifically disrupting E. coli membranes. Traces of zinc ions (1.25mg/L) and hydrogen peroxide (from 1.25 to 4.5μM/L) were detected in ZnO NPs suspensions, but was insufficient to cause the antibacterial effect. However, the addition of radical scavengers suppressed the bactericidal effect of ZnO coated films against E. coli, potentially implicating ROS generation, especially hydroxyl radicals, in the antibacterial ability of ZnO NPs. Copyright © 2016 Elsevier B.V. All rights reserved.
Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition
NASA Astrophysics Data System (ADS)
Tolosa, Maria D. Reyes; Damonte, Laura C.; Brine, Hicham; Bolink, Henk J.; Hernández-Fenollosa, María A.
2013-03-01
Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion.
Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition.
Tolosa, Maria D Reyes; Damonte, Laura C; Brine, Hicham; Bolink, Henk J; Hernández-Fenollosa, María A
2013-03-23
Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion.
Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition
2013-01-01
Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion. PMID:23522332
High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke
2014-07-21
Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductivemore » graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.« less
Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring
DOE Office of Scientific and Technical Information (OSTI.GOV)
Nomenyo, K.; Kostcheev, S.; Lérondel, G.
2014-05-05
Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguidingmore » is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.« less
Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes
NASA Astrophysics Data System (ADS)
Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.
2014-09-01
Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.
Sanctis, Shawn; Hoffmann, Rudolf C; Eiben, Sabine; Schneider, Jörg J
2015-01-01
Tobacco mosaic virus (TMV) has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET). A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO) nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS), transmission electron microscopy (TEM), grazing incidence X-ray diffractometry (GI-XRD) and atomic force microscopy (AFM). TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.
NASA Astrophysics Data System (ADS)
Al-Saadi, Mubarak J.; Al-Harthi, Salim H.; Kyaw, Htet H.; Myint, Myo T. Z.; Bora, Tanujjal; Laxman, Karthik; Al-Hinai, Ashraf; Dutta, Joydeep
2017-01-01
We report on the surface, sub-surface (top few nanometers) and bulk properties of hydrothermally grown zinc oxide (ZnO) nanorods (NRs) prior to and after hydrogen treatment. Upon treating with atomic hydrogen (H*), upward and downward band bending is observed depending on the availability of molecular H2O within the structure of the NRs. In the absence of H2O, the H* treatment demonstrated a cleaning effect of the nanorods, leading to a 0.51 eV upward band bending. In addition, enhancement in the intensity of room temperature photoluminescence (PL) signals due to the creation of new surface defects could be observed. The defects enhanced the visible light activity of the ZnO NRs which were subsequently used to photocatalytically degrade aqueous phenol under simulated sunlight. On the contrary, in the presence of H2O, H* treatment created an electronic accumulation layer inducing downward band bending of 0.45 eV ( 1/7th of the bulk ZnO band gap) along with the weakening of the defect signals as observed from room temperature photoluminescence spectra. The results suggest a plausible way of tailoring the band bending and defects of the ZnO NRs through control of H2O/H* species.
NASA Astrophysics Data System (ADS)
Xu, Kun; Xie, Yiyang; Ma, Huali; Du, Yinxiao; Zeng, Fanguang; Ding, Pei; Gao, Zhiyuan; Xu, Chen; Sun, Jie
2016-12-01
In this paper, by virtue of one-dimensional ZnO nanorods and two-dimensional graphene film hybrid structures, both the enhanced current spreading and enhanced light extraction were realized at the same time. A 1 nm/1 nm Ni/Au layer was used as an interlayer between graphene and pGaN to form ohmic contact, which makes the device have a good forward conduction properties. Through the comparison of the two groups of making ZnO nanorods or not, it was found that the 30% light extraction efficiency of the device was improved by using the ZnO nanorods. By analysis key parameters of two groups such as the turn-on voltage, work voltage and reverse leakage current, it was proved that the method for preparing surface nano structure by hydrothermal method self-organization growth ZnO nanorods applied in GaN LEDs has no influence to device's electrical properties. The hybrid structure application in GaN LED, make an achievement of a good ohmic contact, no use of ITO and enhancement of light extraction at the same time, meanwhile it does not change the device structure, introduce additional process, worsen the electrical properties.
Fabrication of hierarchical ZnO nanostructures on cotton fabric for wearable device applications
NASA Astrophysics Data System (ADS)
Pandiyarasan, V.; Suhasini, S.; Archana, J.; Navaneethan, M.; Majumdar, Abhijit; Hayakawa, Y.; Ikeda, H.
2017-10-01
We have investigated ZnO nanostructures on cotton fabric (CF) s a flexible material for an application of wearable thermoelectric (TE) power generator which requires super-hydrophobicity, UV protection, and high TE efficiency. Field emission scanning electron microscopy images revealed that the formed ZnO nanostructures have a mixture of nanorods and nanosheets and are uniformly coated on the CF. XRD pattern and Raman spectra revealed that the ZnO nanostructure has a wurtzite structure. Contact angle measurements showed that the ZnO-nanostructures-coated CF possessed a high super hydrophobic nature with an angle of 132.5°. ZnO nanocomposite/CF sample exhibited an excellent UV protection factor 183.84. Seebeck coefficient, electrical resistivity and thermoelectric power factor of the ZnO nanostructures on cotton fabric were evaluated to be 28 μV/K, 0.04 Ω-cm, and 22 μW/m K2, respectively.
Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution
NASA Astrophysics Data System (ADS)
Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu
2013-04-01
We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.
NASA Astrophysics Data System (ADS)
Jing, W. X.; Shi, J. F.; Xu, Z. P.; Jiang, Z. D.; Wei, Z. Y.; Zhou, F.; Wu, Q.; Cui, Q. B.
2018-03-01
Batches of un-doped and Ag-doped ZnO nanowires (ZnONWs) were prepared hydrothermally on stainless steel wire sieves at varied Zn2+ concentrations of the growth solution and at different Ag+ concentrations of the silver nitrate solution. Methylene blue solution was degraded with these as-prepared ZnONWs in the presences of ultraviolet irradiation. It is found that both the processing parameters greatly affect the surface textures, wettability, and photo-activity of the ZnONWs. The latter synthesizing parameter is optimized only after the former one has been finely regulated. The un-doped and Ag-doped ZnONWs at Zn2+ concentration of 75 mM of the growth solution and at Ag+ concentration of3 mM of the silver nitrate solution both produce Gaussian rough surfaces and in each batch are most hydrophilic. Therefore, in the related batch the contacting surface area of the catalyst is the largest, the hydroxyl radicals attached on the top ends of corresponding ZnONWs the most, and the catalytic activity of these catalysts the optimal. Besides these, the latter synthesizing parameter affects the photo-activity of Ag-doped ZnONWs more significantly than the former one does that of un-doped ZnONWs.
NASA Astrophysics Data System (ADS)
Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan
2015-01-01
Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.
NASA Astrophysics Data System (ADS)
Sukharev, V.; Sukhanova, E.; Mozhevitina, E.; Sadovsky, A.; Avetissov, I.
2017-06-01
Li2O - ZnO - MoO3 pseudo ternary system was used for the growth of Li2Zn2(MoO4)3 crystals by the top seeded solution growth technique in which MoO3 was used as a solvent. Properties of the melts (density, viscosity) have been experimentally measured at different temperatures and compositions of Li2O - ZnO - MoO3 pseudo ternary system. Heat mass transfer in the crystal growth setup was numerically simulated. Using the simulation results a real growth setup was made, Li2Zn2(MoO4)3 crystals were grown and their properties were studied.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Saurdi, I., E-mail: saurdy788@gmail.com; Ishak, A.; UiTM Sarawak Kampus Kota Samarahan Jalan Meranek, Sarawak
2016-07-06
The TiO{sub 2} films were deposited on glass substrate at different thicknesses with different deposition frequencies (1, 2, 3 and 4 times) using spin coating technique and their structural properties were investigated. Subsequently, the nanocomposited aligned ZnO nanorods and TiO{sub 2} were formed by deposited the TiO{sub 2} on top of aligned ZnO Nanorod on ITO-coated glass at different thicknesses using the same method of TiO{sub 2} deposited on glass substrate. The nanocomposited aligned ZnO nanorod/TiO{sub 2} were coated with different thicknesses of 900µm, 1815µm, 2710µm, 3620µm and ZnO without TiO{sub 2}. The dye-sensitized solar cells were fabricated from themore » nanocomposited aligned ZnO nanorod/TiO{sub 2} with thickness of 900µm, 1815µm, 2710µm and 3620µm and ZnO without TiO{sub 2} and their photovoltaic properties of the DSSCs were investigated. From the solar simulator measurement the solar energy conversion efficiency (η) of 2.543% under AM 1.5 was obtained for the ZnO nanorod/TiO{sub 2} photoanode-2710µm Dye-Sensitized solar cell.« less
Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact
Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...
2016-02-01
Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less
Silva, R M; Ferro, M C; Araujo, J R; Achete, C A; Clavel, G; Silva, R F; Pinna, N
2016-07-19
Zinc oxide thin films were deposited on vertically aligned nitrogen-doped carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) from diethylzinc and water. The study demonstrates that doping CNTs with nitrogen is an effective approach for the "activation" of the CNTs surface for the ALD of metal oxides. Conformal ZnO coatings are already obtained after 50 ALD cycles, whereas at lower ALD cycles an island growth mode is observed. Moreover, the process allows for a uniform growth from the top to the bottom of the vertically aligned N-CNT arrays. X-ray photoelectron spectroscopy demonstrates that ZnO nucleation takes place at the N-containing species on the surface of the CNTs by the formation of the Zn-N bonds at the interface between the CNTs and the ZnO film.
The Effect of Different Coupling Agents on Nano-ZnO Materials Obtained via the Sol-Gel Process.
Purcar, Violeta; Şomoghi, Raluca; Niţu, Sabina Georgiana; Nicolae, Cristian-Andi; Alexandrescu, Elvira; Gîfu, Ioana Cătălina; Gabor, Augusta Raluca; Stroescu, Hermine; Ianchiş, Raluca; Căprărescu, Simona; Cinteză, Ludmila Otilia
2017-12-12
Hybrid nanomaterials based on zinc oxide were synthesized via the sol-gel method, using different silane coupling agents: (3-glycidyloxypropyl)trimethoxysilane (GPTMS), phenyltriethoxysilane (PhTES), octyltriethoxysilane (OTES), and octadecyltriethoxysilane (ODTES). Morphological properties and the silane precursor type effect on the particle size were investigated using dynamic light scattering (DLS), environmental scanning electron microscopy (ESEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), and X-ray diffraction (XRD). The bonding characteristics of modified ZnO materials were investigated using Fourier transform infrared spectroscopy (FTIR). The final solutions were deposited on metallic substrate (aluminum) in order to realize coatings with various wettability and roughness. The morphological studies, obtained by ESEM and TEM analysis, showed that the sizes of the ZnO nanoparticles are changed as function of silane precursor used in synthesis. The thermal stability of modified ZnO materials showed that the degradation of the alkyl groups takes place in the 300-500 °C range. Water wettability study revealed a contact angle of 142 ± 5° for the surface covered with ZnO material modified with ODTES and showed that the water contact angle increases as the alkyl chain from the silica precursor increases. These modified ZnO materials, therefore, can be easily incorporated in coatings for various applications such as anti-corrosion and anti-icing.
NASA Astrophysics Data System (ADS)
Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang
2015-07-01
Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.
Dual-step synthesis of 3-dimensional niobium oxide - Zinc oxide
NASA Astrophysics Data System (ADS)
Rani, Rozina Abdul; Zoolfakar, Ahmad Sabirin; Rusop, M.
2018-05-01
A facile fabrication process for constructing 3-dimensional (3D) structure of Niobium oxide - Zinc oxide (Nb2O5-ZnO) consisting of branched ZnO microrods on top of nanoporous Nb2O5 films was developed based on dual-step synthesis approach. The preliminary procedure was anodization of sputtered niobium metal on Fluorine doped Tin Oxide (FTO) to produce nanoporous Nb2O5, and continued with the growth of branched microrods of ZnO by hydrothermal process. This approach offers insight knowledge on the development of novel 3D metal oxide films via dual-step synthesis process, which might potentially use for multi-functional applications ranging from sensing to photoconversion.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Napari, Mari, E-mail: mari.napari@jyu.fi; Malm, Jari; Lehto, Roope
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{submore » 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.« less
Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films
NASA Astrophysics Data System (ADS)
Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.
2018-05-01
In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.
NASA Astrophysics Data System (ADS)
Li, Xin; Zhang, Qi
2017-04-01
Understanding the natural electrical properties in semiconductor channels and the carrier transport across the metal-semiconductor contact is essential to improve the performance of nanowire devices. This work presents the true electronic characteristics of ZnO nanowire devices measured by a four-electrode method at a low-temperature environment. The temperature rise leads to the decrease in near-band-gap emission, which is attributed to two non-radiative recombination processes. For ZnO circuits, thermionic emission carrier transport mechanism plays a dominant role at Ti-Au/ZnO interface and the transport mechanism in ZnO nanowires is governed by two competitive thermal activation conduction processes: optical or acoustic phonons assisting hopping.
NASA Astrophysics Data System (ADS)
Yun, Ho-Jin; Kim, Young-Su; Jeong, Kwang-Seok; Kim, Yu-Mi; Yang, Seung-dong; Lee, Hi-Deok; Lee, Ga-Won
2014-01-01
In this study, we fabricated dual-gate zinc oxide thin film transistors (ZnO TFTs) without additional processes and analyzed their stability characteristics under a negative gate bias stress (NBS) by comparison with conventional bottom-gate structures. The dual-gate device shows superior electrical parameters, such as subthreshold swing (SS) and on/off current ratio. NBS of VGS = -20 V with VDS = 0 was applied, resulting in a negative threshold voltage (Vth) shift. After applying stress for 1000 s, the Vth shift is 0.60 V in a dual-gate ZnO TFT, while the Vth shift is 2.52 V in a bottom-gate ZnO TFT. The stress immunity of the dual-gate device is caused by the change in field distribution in the ZnO channel by adding another gate as the technology computer aided design (TCAD) simulation shows. Additionally, in flicker noise analysis, a lower noise level with a different mechanism is observed in the dual-gate structure. This can be explained by the top side of the ZnO film having a larger crystal and fewer grain boundaries than the bottom side, which is revealed by the enhanced SS and XRD results. Therefore, the improved stability of the dual-gate ZnO TFT is greatly related to the E-field cancellation effect and crystal quality of the ZnO film.
Water-repellent coatings prepared by modification of ZnO nanoparticles
NASA Astrophysics Data System (ADS)
Chakradhar, R. P. S.; Dinesh Kumar, V.
Superhydrophobic coatings with a static water contact angle (WCA) > 150° were prepared by modifying ZnO nanoparticles with stearic acid (ZnO@SA). ZnO nanoparticles of size ˜14 nm were prepared by solution combustion method. X-ray diffraction (XRD) studies reveal that as prepared ZnO has hexagonal wurtzite structure whereas the modified coatings convert to zinc stearate. Field emission scanning electron micrographs (FE-SEM) show the dual morphology of the coatings exhibiting both particles and flakes. The flakes are highly fluffy in nature with voids and nanopores. Fourier transformed infrared (FTIR) spectrum shows the stearate ion co-ordinates with Zn2+ in the bidentate form. The surface properties such as surface free energy (γp) and work of adhesion (W) of the unmodified and modified ZnO coatings have been evaluated. The electron paramagnetic resonance (EPR) spectroscopy reveals that surface defects play a major role in the wetting behavior.
Dye-sensitized solar cell employing zinc oxide aggregates grown in the presence of lithium
Zhang, Qifeng; Cao, Guozhong
2013-10-15
Provided are a novel ZnO dye-sensitized solar cell and method of fabricating the same. In one embodiment, deliberately added lithium ions are used to mediate the growth of ZnO aggregates. The use of lithium provides ZnO aggregates that have advantageous microstructure, morphology, crystallinity, and operational characteristics. Employing lithium during aggregate synthesis results in a polydisperse collection of ZnO aggregates favorable for porosity and light scattering. The resulting nanocrystallites forming the aggregates have improved crystallinity and more favorable facets for dye molecule absorption. The lithium synthesis improves the surface stability of ZnO in acidic dyes. The procedures developed and disclosed herein also help ensure the formation of an aggregate film that has a high homogeneity of thickness, a high packing density, a high specific surface area, and good electrical contact between the film and the fluorine-doped tin oxide electrode and among the aggregate particles.
NASA Astrophysics Data System (ADS)
Kong, Lizhuo; Tu, Kunkun; Guan, Hao; Wang, Xiaoqing
2017-06-01
Zinc oxide (ZnO) nanorod arrays were successfully assembled on the wood surface in situ via a two-step process consisting of formation of ZnO seeds and subsequent crystal growth under hydrothermal conditions at a low temperature. The morphology and crystalline structure of the formed ZnO nanorods were studied by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). Highly dense and uniform arrays of ZnO nanorods with well-defined hexagonal facets were generated on the wood surface by tuning the concentration of the ZnO growth solution during the hydrothermal treatment. Accelerated weathering tests indicated that the assembled ZnO nanorod arrays were highly protective against UV radiation and greatly enhanced the photostability of the coated wood. Meanwhile, the ZnO nanorod-coated wood can withstand continuous exposure to flame with only minor smoldering in contrast with the pristine wood catching fire easily and burning rapidly. Moreover, when further modified with low-surface-energy stearic acid, the ZnO nanorod decorated wood surface can be transformed into a superhydrophobic surface, with a water contact angle (CA) of ∼154°. Such ZnO nanorod-modified woods with enhanced photostability, flame retardancy and water repellency offer an interesting alternative to conventional wood preservation strategies, highlighting their potential applications in some novel wood products.
Ramasamy, Mohankandhasamy; Das, Minakshi; An, Seong Soo A; Yi, Dong Kee
2014-01-01
The wide-scale applications of zinc oxide (ZnO) nanoparticles (NPs) in photocatalysts, gas sensors, and cosmetics may cause toxicity to humans and environments. Therefore, the aim of the present study was to reduce the toxicity of ZnO NPs by coating them with a silica (SiO2) layer, which could be used in human applications, such as cosmetic preparations. The sol–gel method was used to synthesize core ZnO with SiO2-shelled NPs (SiO2/ZnO NPs) with varying degrees of coating. Diverse studies were performed to analyze the toxicity of NPs against cells in a dose- and time-dependent manner. To ensure the decreased toxicity of the produced SiO2/ZnO NPs, cytotoxicity in membrane damage and/or intracellular reactive oxygen species (ROS) were assessed by employing 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide, lactate dehydrogenase, 2′,7′-dichlorofluorescin, and lipid peroxide estimations. The cores of ZnO NPs exhibited cytotoxicity over time, regardless of shell thickness. Nevertheless, the thicker SiO2/ZnO NPs revealed reduced enzyme leakage, decreased peroxide production, and less oxidative stress than their bare ZnO NPs or thinner SiO2/ZnO NPs. Therefore, thicker SiO2/ZnO NPs moderated the toxicity of ZnO NPs by restricting free radical formation and the release of zinc ions, and decreasing surface contact with cells. PMID:25143723
Ramasamy, Mohankandhasamy; Das, Minakshi; An, Seong Soo A; Yi, Dong Kee
2014-01-01
The wide-scale applications of zinc oxide (ZnO) nanoparticles (NPs) in photocatalysts, gas sensors, and cosmetics may cause toxicity to humans and environments. Therefore, the aim of the present study was to reduce the toxicity of ZnO NPs by coating them with a silica (SiO2) layer, which could be used in human applications, such as cosmetic preparations. The sol-gel method was used to synthesize core ZnO with SiO2-shelled NPs (SiO2/ZnO NPs) with varying degrees of coating. Diverse studies were performed to analyze the toxicity of NPs against cells in a dose- and time-dependent manner. To ensure the decreased toxicity of the produced SiO2/ZnO NPs, cytotoxicity in membrane damage and/or intracellular reactive oxygen species (ROS) were assessed by employing 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide, lactate dehydrogenase, 2',7'-dichlorofluorescin, and lipid peroxide estimations. The cores of ZnO NPs exhibited cytotoxicity over time, regardless of shell thickness. Nevertheless, the thicker SiO2/ZnO NPs revealed reduced enzyme leakage, decreased peroxide production, and less oxidative stress than their bare ZnO NPs or thinner SiO2/ZnO NPs. Therefore, thicker SiO2/ZnO NPs moderated the toxicity of ZnO NPs by restricting free radical formation and the release of zinc ions, and decreasing surface contact with cells.
Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.
Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki
2018-06-19
We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.
Sun, Bai; Zhang, Xuejiao; Zhou, Guangdong; Yu, Tian; Mao, Shuangsuo; Zhu, Shouhui; Zhao, Yong; Xia, Yudong
2018-06-15
In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-read-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM). Copyright © 2018 Elsevier Inc. All rights reserved.
NASA Astrophysics Data System (ADS)
Li, Yapeng; Li, Yingfeng; Zhang, Jianhua; Tong, Ting; Ye, Wei
2018-03-01
The ZnO films were fabricated on the surface of n-Si(1 1 1) substrate using the sol-gel method, and the graphene was then transferred to its surface for the fabrication of the graphene/ZnO Schottky contact. The results showed that ZnO films presented a strong (0 0 2) preferred direction, and that the particle sizes on the surface decreased as the doping concentration of B ions increased. The electrical properties of the graphene/ZnO Schottky contact were measured by using current-voltage measurements. It was found that the graphene/ZnO Schottky contact showed a fine rectification behavior when the doping concentration of B ions was increased. However, when the doping concentration of the B ions increased to 0.15 mol l-1, the leakage current increased and rectification behavior weakened. This was due to the Fermi level pinning caused by the presence of the O vacancy at the interface of the graphene/ZnO Schottky contact.
Large-scale fabrication of vertically aligned ZnO nanowire arrays
Wang, Zhong Lin; Hu, Youfan; Zhang, Yan; Xu, Chen; Zhu, Guang
2014-09-09
A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.
A fast and effective approach for reversible wetting-dewetting transitions on ZnO nanowires
Yadav, Kavita; Mehta, B. R.; Bhattacharya, Saswata; Singh, J. P.
2016-01-01
Here, we demonstrate a facile approach for the preparation of ZnO nanowires (NWs) with tunable surface wettability that can be manipulated reversibly in a controlled manner from a superhydrophilic state to a superhydrophobic state. The as-synthesized ZnO NWs obtained by a chemical vapor deposition method are superhydrophilic with a contact angle (CA) value of ~0°. After H2 gas annealing at 300 °C for 90 minutes, ZnO NWs display superhydrophobic behavior with a roll-off angle less than 5°. However, O2 gas annealing converts these superhydrophobic ZnO NWs into a superhydrophilic state. For switching from superhydrophobic to superhydrophilic state and vice versa in cyclic manner, H2 and O2 gas annealing treatment was used, respectively. A model based on density functional theory indicates that the oxygen-related defects are responsible for CA switching. The water resistant properties of the ZnO NWs coating is found to be durable and can be applied to a variety of substrates including glass, metals, semiconductors, paper and even flexible polymers. PMID:27713536
NASA Astrophysics Data System (ADS)
Mai, Wenjie; Zhang, Long; Gu, Yudong; Huang, Shiqing; Zhang, Zongfu; Lao, Changshi; Yang, Peihua; Qiang, Pengfei; Chen, Zhongwei
2012-08-01
With assistance from a nano-manipulator system inside a scanning electron microscope chamber, mechanical and electrical properties of ZnO nanorings were investigated. The change of a fractured nanoring to nearly straight nanobelts was strong evidence to support the previously proposed electrostatic-force-induced self-coiling model, and our computational simulation results indicated the fracture force was 25-30 μN. The contact between a tungsten tip of the manipulator and a ZnO nanoring was confirmed as the Schottky type; therefore, the change of I-V curves of the nanoring under compression was attributed to the Schottky barrier height changes.
NASA Astrophysics Data System (ADS)
Pahari, D.; Das, N. S.; Das, B.; Chattopadhyay, K. K.; Banerjee, D.
2016-09-01
Zinc oxide (ZnO) nanorods were synthesized at room temperature on potassium permanganate activated silicon and glass substrate by simple chemical method using zinc acetate as precursor. To modify the surface energy of the as prepared ZnO thin films the samples were coated with amorphous graphene (a-G) synthesized by un-zipping of chemically synthesized amorphous carbon nanotubes (a-CNTs). All the pure and coated samples were characterized by x-ray diffraction, field emission scanning electron microscope, Raman spectroscopy, and Fourier transformed infrared spectroscopy. The roughness analysis of the as prepared samples was done by atomic force microscopic analysis. The detail optical properties of all the samples were studied with the help of a UV-Visible spectrophotometer. The surface energy of the as prepared pure and coated samples was calculated by measuring the contact angle of two different liquids. It is seen that the water repellence of ZnO nanorods got increased after they are being coated with a-Gs. Also even after UV irradiation the contact angle remain same unlike the case for the uncoated sample where the contact angle gets decreased significantly after UV irradiation. Existing Cassie-Wenzel model has been employed along with the Owen's approach to determine the different components of surface energy.
Synthesis of ZnO and Zn nanoparticles in microwave plasma and their deposition on glass slides.
Irzh, Alexander; Genish, Isaschar; Klein, Lior; Solovyov, Leonid A; Gedanken, Aharon
2010-04-20
This work represents a new method to synthesis of ZnO and/or Zn nanoparticles by means of microwave plasma whose electrons are the reducing agents. Glass quadratic slides sized 2.5 x 2.5 cm were coated by ZnO and/or Zn particles whose sizes ranged from a few micrometers to approximately 20 nm. The size of the particles can be controlled by the type of the precursor and its concentration. In the current paper, the mechanism of the reactions of ZnO and/or Zn formation was proposed. Longer plasma irradiation and lower precursor concentration favor the fabrication of metallic Zn nanoparticles. The nature of the precursor's ion (acetate, nitrate, or chloride) is also of importance in determining the composition of the product. The glass slides coated by ZnO and/or Zn nanoparticles were characterized by HR-SEM, HR-TEM, AFM, XRD, ESR, contact angle and diffuse reflectance spectroscopy (DRS).
ZnO nanosheet arrays constructed on weaved titanium wire for CdS-sensitized solar cells
2014-01-01
Ordered ZnO nanosheet arrays were grown on weaved titanium wires by a low-temperature hydrothermal method. CdS nanoparticles were deposited onto the ZnO nanosheet arrays using the successive ionic layer adsorption and reaction method to make a photoanode. Nanoparticle-sensitized solar cells were assembled using these CdS/ZnO nanostructured photoanodes, and their photovoltaic performance was studied systematically. The best light-to-electricity conversion efficiency was obtained to be 2.17% under 100 mW/cm2 illumination, and a remarkable short-circuit photocurrent density of approximately 20.1 mA/cm2 was recorded, which could attribute to the relatively direct pathways for transportation of electrons provided by ZnO nanosheet arrays as well as the direct contact between ZnO and weaved titanium wires. These results indicate that CdS/ZnO nanostructures on weaved titanium wires would open a novel possibility for applications of low-cost solar cells. PMID:24618047
NASA Astrophysics Data System (ADS)
Qiang, Wei; Wei, Li; Shaodan, Wang; Yu, Bai
2015-08-01
The precise measurement of quartz crystal microbalance (QCM) in the detection and weighing of organic gas molecules is achieved due to excellent superhydrophobicity of a deposited film composite. Photocatalysis is utilized as a method for the self-cleaning of organic molecules on the QCM for extended long-term stability in the precision of the instrument. In this paper, ZnO nanorod array is prepared via in situ methods on the QCM coated with Au film via hydrothermal process. Subsequently, a TiO2/ZnO composite film is synthesized by surface modification with TiO2 via sol-gel methods. Results show the anatase TiO2/ZnO nanorod composite film with a sharp, pencil-like structure exhibiting excellent superhydrophobicity (water contact angle of 155°), non-sticking water properties, and an autonomous cleaning property under UV irradiation. The anatase TiO2/ZnO nanorod composite film facilitates the precise measurement and extended lifetime of the QCM for the detection of organic gas molecules.
Mccluskey, Matthew D.; Corolewski, Caleb; Lv, Jinpeng; ...
2015-03-21
Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence shows that these point defects have acceptor levels 3.2, 1.5, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peakmore » in ZnO nanocrystals has been attributed to an acceptor, which may involve a zinc vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g = 2.0033 and g = 2.0075, along with an isotropic center at g = 2.0053.« less
Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers
NASA Astrophysics Data System (ADS)
Gu, Wen; Xu, Tao; Zhang, Jianhua
2013-11-01
Copper sulfide (CuS) was used as the intermediate layer to build ohmic contact of Ga-Doped ZnO (GZO) transparent conduction layer (TCL) to p-GaN. The CuS and GZO layers were prepared by thermal evaporation and RF magnetron sputtering, respectively. Although the GZO-only contacts to p-GaN exhibit nonlinear behavior, ohmic contact with a specific contact resistance of 1.6 × 10-2 Ω cm2 has been realized by inserting 3 nm CuS layer between GZO and p-GaN. The optical transmittance of CuS/GZO film was measured to be higher than 80% in the range of 450-600 nm wavelength. The possible mechanism for the ohmic contact behavior can be attributed to the increased hole concentration of p-GaN surface induced by CuS films after annealing. The forward voltage of LEDs with CuS/GZO TCL has been reduced by 1.7 V at 20 mA and the output power has been increased by 29.6% at 100 mA compared with LEDs without CuS interlayer. These results indicated that using CuS intermediate layer could be a potential ohmic contact method to realize high-efficiency LEDs.
Effect of growth time to the properties of Al-doped ZnO nanorod arrays
NASA Astrophysics Data System (ADS)
Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.
2018-05-01
Aluminum (Al)-doped zinc oxide (ZnO) nanorod array films were successfully deposited at different growth time on zinc oxide (ZnO) seed layer coated glass substrate using sol-gel immersion method. The morphology images of the films showed that the thicknesses of the films were increased parallel with the increment of growth period. The surface topology of the films displayed an increment of roughness as the growth period increased. Optical properties of the samples exposed that the percentage of transmittances reduced at higher growth time. Besides, the Urbach energy of the films slightly increased as the immersion time increased. The current-voltage (I-V) measurement indicated that the resistance increased as the immersion time increased owing to the appearance of intrinsic layer on top of the nanorods.
Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil
2014-08-21
On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.
Lattice diffusion and vapor solid growths forming nanoarchitectures on ZnO nanowires
NASA Astrophysics Data System (ADS)
Sombrio, Guilherme; Rivaldo-Gómez, C. M.; Pomar, Cesar A. D.; Souza, Jose A.
2017-12-01
We report hierarchical nanoarchitectures formed on the tips and sidewalls of ZnO nanowires which is formed on the top of microtubes. The whole growth process of these micro/nanostructures during thermal oxidation combines lattice/grain/surface ionic diffusion along with vapor solid mechanism. All the process takes place along with the presence of an electric current, which plays an important role forming the ZnO molecules due to Zn metal evaporation and attracting them to condense into nanostructures of several morphologies. The observation of a very long needle-like nanowire reveals the stack nature of the growth. These nanoarchitectures are rarely observed experimentally. Raman scattering confirms phonon confinement in the nanostructures. Photoluminescence measurements indicate a route for engineering defects on the surface of ZnO microtubes after the complete coalescence of the nanostructures through heat treatment. This experiment would be useful for improving nanostructure organization which could provide an impact in the manufacturability of nanostructure-based systems.
ZnO deposition on metal substrates: Relating fabrication, morphology, and wettability
NASA Astrophysics Data System (ADS)
Beaini, Sara S.; Kronawitter, Coleman X.; Carey, Van P.; Mao, Samuel S.
2013-05-01
It is not common practice to deposit thin films on metal substrates, especially copper, which is a common heat exchanger metal and practical engineering material known for its heat transfer properties. While single crystal substrates offer ideal surfaces with uniform structure for compatibility with oxide deposition, metallic surfaces needed for industrial applications exhibit non-idealities that complicate the fabrication of oxide nanostructure arrays. The following study explored different ZnO fabrication techniques to deposit a (super)hydrophobic thin film of ZnO on a metal substrate, specifically copper, in order to explore its feasibility as an enhanced condensing surface. ZnO was selected for its non-toxicity, ability to be made (super)hydrophobic with hierarchical roughness, and its photoinduced hydrophilicity characteristic, which could be utilized to pattern it to have both hydrophobic-hydrophilic regions. We investigated the variation of ZnO's morphology and wetting state, using SEMs and sessile drop contact angle measurements, as a function of different fabrication techniques: sputtering, pulsed laser deposition (PLD), electrodeposition and annealing Zn. We successfully fabricated (super)hydrophobic ZnO on a mirror finish, commercially available copper substrate using the scalable electrodeposition technique. PLD for ZnO deposition did not prove viable, as the ZnO samples on metal substrates were hydrophilic and the process does not lend itself to scalability. The annealed Zn sheets did not exhibit consistent wetting state results.
On the difficulties in characterizing ZnO nanowires.
Schlenker, E; Bakin, A; Weimann, T; Hinze, P; Weber, D H; Gölzhäuser, A; Wehmann, H-H; Waag, A
2008-09-10
The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10(-3)-10(5) Ωcm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.
Effect of Pressure on the Stability and Electronic Structure of ZnO0.5S0.5 and ZnO0.5Se0.5
NASA Astrophysics Data System (ADS)
Manotum, R.; Klinkla, R.; Phaisangittisakul, N.; Pinsook, U.; Bovornratanaraks, T.
2017-12-01
Structures and high-pressure phase transitions in ZnO0.5S0.5 and ZnO0.5Se0.5 have been investigated using density functional theory calculations. The previously proposed structures of ZnO0.5S0.5 and ZnO0.5Se0.5 which are chalcopyrite ( I\\bar{4}2d ), rocksalt ( Fm3m ), wurtzite ( P63 mc ) and CuAu-I ( P\\bar{4}m2 ) have been fully investigated. Stabilities of these materials have been systematically studied up to 40 GPa using various approaches. We have confirmed the stability of the chalcopyrite structure up to 30 GPa for which the CuAu-I structure has been previously proposed. However, our calculation revealed that CuAu-I is not a stable structure under 32 GPa and 33 GPa for both ZnO0.5S0.5 and ZnO0.5Se0.5, respectively, which could explain the failure in several attempts to fabricate these materials under such conditions. We have also examined the pressure-dependence of the bandgap and electronic structure up to 30 GPa. We can conclude from our PDOS analysis that the applied pressure does not change the atomic state characters of electronic states near the top of valence and the bottom of conduction bands, but mainly modifies the dominant Zn-3d atomic state of the deep Bloch state at -1 eV below Fermi level.
NASA Astrophysics Data System (ADS)
Srivastava, Amar; Saha, S.; Annadi, A.; Zhao, Y. L.; Gopinadhan, K.; Wang, X.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Herng, T. S.; Nina, Bao; Ariando, -; Ding, Jun; Venkatesan, T.
2012-02-01
In this work we report a study of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire by photoluminescence and electrical transport measurements across the VO2 metal insulator phase transition (MIT). The photoluminescence of the ZnO layer showed a broad hysteresis induced by the phase transition of VO2 while the width of the electrical hysteresis was narrow and unaffected by the over layer. The enhanced width of the PL hysteresis was due to the formation of defects during the MIT as evidenced by a broad hysteresis in the opposite direction to that of the band edge PL in the defect luminescense. Unlike VO2 the defects in ZnO did not fully recover across the phase transition. From the defect luminescence data, oxygen interstitials were found to be the predominant defects in ZnO mediated by the strain from the VO2 phase transition. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces and also for novel device application.
Power generation from base excitation of a Kevlar composite beam with ZnO nanowires
NASA Astrophysics Data System (ADS)
Malakooti, Mohammad H.; Hwang, Hyun-Sik; Sodano, Henry A.
2015-04-01
One-dimensional nanostructures such as nanowires, nanorods, and nanotubes with piezoelectric properties have gained interest in the fabrication of small scale power harvesting systems. However, the practical applications of the nanoscale materials in structures with true mechanical strengths have not yet been demonstrated. In this paper, piezoelectric ZnO nanowires are integrated into the fiber reinforced polymer composites serving as an active phase to convert the induced strain energy from ambient vibration into electrical energy. Arrays of ZnO nanowires are grown vertically aligned on aramid fibers through a low-cost hydrothermal process. The modified fabrics with ZnO nanowires whiskers are then placed between two carbon fabrics as the top and the bottom electrodes. Finally, vacuum resin transfer molding technique is utilized to fabricate these multiscale composites. The fabricated composites are subjected to a base excitation using a shaker to generate charge due to the direct piezoelectric effect of ZnO nanowires. Measuring the generated potential difference between the two electrodes showed the energy harvesting application of these multiscale composites in addition to their superior mechanical properties. These results propose a new generation of power harvesting systems with enhanced mechanical properties.
New Insights into Mechanism of Surface Reactions of ZnO Nanorods During Electrons Beam Irradiation.
Cho, Youngseung; Ji, Hyunjin; Kim, Hyoungsub; Yoon, Jinsuop; Choi, Byoungdeog
2018-09-01
This study provides new insight into mechanisms of ionic reactions on the surface of ZnO nanorod networks, which could result in enhanced performance in optical or molecular sensors. The current- voltage characteristics of ZnO nanorod network devices exhibit typical nonlinear behavior in air, which implies the formation of a Schottky barrier when metals are used as contacts. The conductance of the device increased significantly in vacuum, which can be explained by the desorption of hydroxyl groups at very low pressure. While physisorbed water or oxygen-related ions can detach from the ZnO surface during evacuation, exposure to high energy in the electron beam is believed to detach the chemisorbed anions of O- and O-2 from the surface of ZnO nanorods, which releases more electrons into the channel. The increase in available electrons enhances the conductance of the ZnO nanorods. Slow initialization of the conductance under ambient conditions indicates that the ionic re-adsorption is inactive under these conditions. Thus, the electron irradiation process can be used to reset the surface ionic molecules on metal oxide nano-structures by tuning the surface potential prior to the passivation process.
Zinc Oxide Grown by CVD Process as Transparent Contact for Thin Film Solar Cell Applications
NASA Astrophysics Data System (ADS)
Faÿ, S.; Shah, A.
Metalorganic chemical vapor deposition of ZnO films (MOCVD) [1] started to be comprehensively investigated in the 1980s, when thin film industries were looking for ZnO deposition processes especially useful for large-scale coatings at high growth rates. Later on, when TCO for thin film solar cells started to be developed, another advantage of growing TCO films by the CVD process has been highlighted: the surface roughness. Indeed, a large number of studies on CVD ZnO revealed that an as-grown rough surface cn be obtained with this deposition process [2-4]. A rough surface induces a light scattering effect, which can significantly improve light trapping (and therefore current photo-generation) within thin film silicon solar cells. The CVD process, indeed, directly leads to as-grown rough ZnO films without any post-etching step (the latter is often introduced to obtain a rough surface, when working with as-deposited flat sputtered ZnO). This fact could turn out to be a significant advantage when upscaling the manufacturing process for actual commercial production of thin film solar modules. The zinc and oxygen sources for CVD growth of ZnO films are given in Table 6.1.
Naghizadeh, Ali; Shahabi, Habibeh; Ghasemi, Fatemeh; Zarei, Ahmad
2016-12-01
The main aim of this research was to study the efficiency of modified walnut shell with titanium dioxide (TiO 2 ) and zinc oxide (ZnO) in the adsorption of humic acid from aqueous solutions. This experimental study was carried out in a batch condition to determine the effects of factors such as contact time, pH, humic acid concentration, dose of adsorbents (raw walnut shell, modified walnut shell with TiO 2 and ZnO) on the removal efficiency of humic acid. pH zpc of raw walnut shell, walnut shell modified with TiO 2 and walnut shell modified with ZnO were 7.6, 7.5, and 8, respectively. The maximum adsorption capacity of humic acid at concentration of 30 mg/L, contact time of 30 min at pH = 3 in an adsorbent dose of 0.02 g of walnut shell and ZnO and TiO 2 modified walnut shell were found to be 35.2, 37.9, and 40.2 mg/g, respectively. The results showed that the studied adsorbents tended to fit with the Langmuir model. Walnut shell, due to its availability, cost-effectiveness, and also its high adsorption efficiency, can be proposed as a promising natural adsorbent in the removal of humic acid from aqueous solutions.
Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires.
Jia, Shuangfeng; Hu, Shuaishuai; Zheng, He; Wei, Yanjie; Meng, Shuang; Sheng, Huaping; Liu, Huihui; Zhou, Siyuan; Zhao, Dongshan; Wang, Jianbo
2018-06-11
Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the applications in future advanced nanodevices. In this study, the atomistic vapor-solid-liquid growth processes of Sn-catalyzed wurtzite (WZ) and zinc blende (ZB) ZnO are directly revealed based on the in situ transmission electron microscopy. The growth kinetics of WZ and ZB crystal phases in ZnO appear markedly different in terms of the NW-droplet interface, whereas the nucleation site as determined by the contact angle ϕ between the seed particle and the NW is found to be crucial for tuning the NW structure through combined experimental and theoretical investigations. These results offer an atomic-scale view into the dynamic growth process of ZnO NW, which has implications for the phase-controllable synthesis of II-VI compounds and heterostructures with tunable band structures.
NASA Astrophysics Data System (ADS)
Singh, Rajender; Sharma, Ramesh; Barman, P. B.; Sharma, Dheeraj
2017-11-01
UV shielding based super hydrophilic material is developed in the present formulation by in situ emulsion polymerization of poly (styrene-acrylonitrile) with ZnO nanoparticles. The ESI-MS technique confirms the structure of polymer nanocomposite by their mass fragments. The XRD study confirms the presence of ZnO phase in polymer matrix. PSAN/ZnO nanocomposite leads to give effective UV shielding (upto 375 nm) and visible luminescence with ZnO content in polymer matrix. The FESEM and TEM studies confirm the symmetrical, controlled growth of PNs. The incorporation of ZnO nanofillers into PSAN matrix lead to restructuring the PNs surfaces into superhydrophilic surfaces in water contact angle (WCA) from 70° to 10°. We believe our synthesized PSAN/ZnO nanocomposite could be potential as UV shielding, luminescent and super hydrophilic nature based materials in related commercial applications.
NASA Astrophysics Data System (ADS)
Jung, Sungpyo
In this dissertation, we investigate Al-doped ZnO(AZO) contact structure to a variety of GaN LED structures. Our results show that ZnO is a potentially viable transparent contact for GaN-based LEDs. We began our investigation by depositing AZO and Ni/AZO contacts to p-GaN. However, these contacts are highly resistive. Next, we deposited thin Ni/Au layer, oxidized the Ni/Au layer to form a good ohmic contact to p-GaN, and then followed by the deposition of thick AZO layer. However, the electrical resistance of oxidized Ni/Au-AZO contacts is higher than that of the conventional Ni/Au contacts. We solve the high contact resistance problem by using a two-step thermal annealing process. In this method, Ni/Au layer is deposited first followed by the AZO layer without any annealing step. After finishing the device fabrication, the samples are annealed in air first to achieve low contact resistance with Ni/Au/AZO and p-GaN and then annealed in nitrogen to achieve low sheet resistance for the AZO layer. The improved electrical and optical characteristics of this scheme compared to conventional Ni/Au contact scheme are demonstrated on a variety of GaN LEDs: blue, green, small area, large area and bottom emitting LEDs. The benefits of ZnO-based contacts are more significant in large area LEDs that include lower forward voltage, and higher optical emission, better emission uniformity and reliability. The advantages of ZnO-based contact in terms of lower contact resistance and higher optical emission on LED fabricated on roughened GaN wafers are also demonstrated. For bottom emitting LED structure intended for flip chip applications, our original oxidized Ni/Au layer over coated with either Al or Ag contacts have shown to simultaneously yield superior I-V characteristics and greatly enhanced optical performance compared to conventional LEDs using a thick Ni/Au contact in the flip-chip configuration. However, the contact is unstable at operating temperatures > 100°C due to close proximity of Ag and Al with p-GaN. Here, the ZnO layer probably can be interdiffusion barrier layer of Al into GaN. We have demonstrated low contact resistance and higher light emission by using ZnO as a barrier material between oxidize Ni/Au and Al reflecting layer. In summary, our investigation demonstrates the applicability of ZnO-based transparent contacts for high performance LEDs that will be larger in size and are expected to be operating at higher current for solid-state lighting of the future. (Abstract shortened by UMI.)
Process for simultaneous removal of SO.sub.2 and NO.sub.x from gas streams
Rosenberg, Harvey S.
1987-01-01
A process for simultaneous removal of SO.sub.2 and NO.sub.x from a gas stream that includes flowing the gas stream to a spray dryer and absorbing a portion of the SO.sub.2 content of the gas stream and a portion of the NO.sub.x content of the gas stream with ZnO by contacting the gas stream with a spray of an aqueous ZnO slurry; controlling the gas outlet temperature of the spray dryer to within the range of about a 0.degree. to 125.degree. F. approach to the adiabatic saturation temperature; flowing the gas, unreacted ZnO and absorbed SO.sub.2 and NO.sub.x from the spray dryer to a fabric filter and collecting any solids therein and absorbing a portion of the SO.sub.2 remaining in the gas stream and a portion of the NO.sub.x remaining in the gas stream with ZnO; and controlling the ZnO content of the aqueous slurry so that sufficient unreacted ZnO is present in the solids collected in the fabric filter to react with SO.sub.2 and NO.sub.x as the gas passes through the fabric filter whereby the overall feed ratio of ZnO to SO.sub.2 plus NO.sub.x is about 1.0 to 4.0 moles of ZnO per of SO.sub.2 and about 0.5 to 2.0 moles of ZnO per mole of NO.sub.x. Particulates may be removed from the gas stream prior to treatment in the spray dryer. The process further allows regeneration of ZnO that has reacted to absorb SO.sub.2 and NO.sub.x from the gas stream and acid recovery.
NASA Astrophysics Data System (ADS)
Prado-Prone, G.; Silva-Bermúdez, P.; García-Macedo, J. A.; Almaguer-Flores, A.; Ibarra, C.; Velasquillo-Martínez, C.
2017-02-01
Antibacterial studies of inorganic nanoparticles (nps) have become important due to the increased bacterial resistance against antibiotics. We used Zinc oxide nanoparticles (ZnO nps), which possess excellent photocatalytic properties with a wide band gap (Eg), are listed as "generally recognized as safe" by the Food and Drug Administration (FDA) and have shown antibacterial activity (AA) against many bacterial strains. The AA of ZnO nps is partly attributed to the production of Reactive Oxygen Species (ROS) by photocatalysis. When ZnO nps in aqueous media are illuminated with an energy
Process for simultaneous removal of SO[sub 2] and NO[sub x] from gas streams
Rosenberg, H.S.
1987-02-03
A process is described for simultaneous removal of SO[sub 2] and NO[sub x] from a gas stream that includes flowing the gas stream to a spray dryer and absorbing a portion of the SO[sub 2] content of the gas stream and a portion of the NO[sub x] content of the gas stream with ZnO by contacting the gas stream with a spray of an aqueous ZnO slurry; controlling the gas outlet temperature of the spray dryer to within the range of about a 0 to 125 F approach to the adiabatic saturation temperature; flowing the gas, unreacted ZnO and absorbed SO[sub 2] and NO[sub x] from the spray dryer to a fabric filter and collecting any solids therein and absorbing a portion of the SO[sub 2] remaining in the gas stream and a portion of the NO[sub x] remaining in the gas stream with ZnO; and controlling the ZnO content of the aqueous slurry so that sufficient unreacted ZnO is present in the solids collected in the fabric filter to react with SO[sub 2] and NO[sub x] as the gas passes through the fabric filter whereby the overall feed ratio of ZnO to SO[sub 2] plus NO[sub x] is about 1.0 to 4.0 moles of ZnO per of SO[sub 2] and about 0.5 to 2.0 moles of ZnO per mole of NO[sub x]. Particulates may be removed from the gas stream prior to treatment in the spray dryer. The process further allows regeneration of ZnO that has reacted to absorb SO[sub 2] and NO[sub x] from the gas stream and acid recovery. 4 figs.
NASA Astrophysics Data System (ADS)
Agnihotri, Shekhar; Bajaj, Geetika; Mukherji, Suparna; Mukherji, Soumyo
2015-04-01
Silver-based hybrid nanomaterials are gaining interest as potential alternatives for conventional antimicrobial agents. Herein, we present a simple, facile and eco-friendly approach for the deposition of silver nanoparticles (AgNPs) on ZnO nanorods, which act as a nanoreactor for in situ synthesis and as an immobilizing template in the presence of arginine. The presence of arginine enhanced the stability of ZnO deposition on the glass substrate by hindering the dissolution of zinc under alkaline conditions. Various Ag/ZnO hybrid nanorod (HNR) samples were screened to obtain a high amount of silver immobilization on the ZnO substrate. Ag/ZnO HNRs displayed potent antibacterial ability and could achieve 100% kill for both Escherichia coli and Bacillus subtilis strains under various test conditions. The hybrid material mediated its dual mode of antibacterial action through direct contact-killing and release of silver ions/nanoparticles and showed superior bactericidal performance compared to pure ZnO nanorods and colloidal AgNPs. No significant decline in antibacterial efficacy was observed even after the same substrate was repeatedly reused multiple times. Interestingly, the amount of Ag and Zn release was much below their maximal limit in drinking water, thus preventing potential health hazards. Immobilized AgNPs showed no cytotoxic effects on the human hepatocarcinoma cell line (HepG2). Moreover, treating cells with the antibacterial substrate for 24 hours did not lead to significant generation of reactive oxygen species (ROS). The good biocompatibility and bactericidal efficacy would thus make it feasible to utilize this immobilization strategy for preparing new-generation antibacterial coatings.Silver-based hybrid nanomaterials are gaining interest as potential alternatives for conventional antimicrobial agents. Herein, we present a simple, facile and eco-friendly approach for the deposition of silver nanoparticles (AgNPs) on ZnO nanorods, which act as a nanoreactor for in situ synthesis and as an immobilizing template in the presence of arginine. The presence of arginine enhanced the stability of ZnO deposition on the glass substrate by hindering the dissolution of zinc under alkaline conditions. Various Ag/ZnO hybrid nanorod (HNR) samples were screened to obtain a high amount of silver immobilization on the ZnO substrate. Ag/ZnO HNRs displayed potent antibacterial ability and could achieve 100% kill for both Escherichia coli and Bacillus subtilis strains under various test conditions. The hybrid material mediated its dual mode of antibacterial action through direct contact-killing and release of silver ions/nanoparticles and showed superior bactericidal performance compared to pure ZnO nanorods and colloidal AgNPs. No significant decline in antibacterial efficacy was observed even after the same substrate was repeatedly reused multiple times. Interestingly, the amount of Ag and Zn release was much below their maximal limit in drinking water, thus preventing potential health hazards. Immobilized AgNPs showed no cytotoxic effects on the human hepatocarcinoma cell line (HepG2). Moreover, treating cells with the antibacterial substrate for 24 hours did not lead to significant generation of reactive oxygen species (ROS). The good biocompatibility and bactericidal efficacy would thus make it feasible to utilize this immobilization strategy for preparing new-generation antibacterial coatings. Electronic supplementary information (ESI) available: Synthesis of ZnO nanorods, instrumentation details, contact killing of Ag/ZnO. See DOI: 10.1039/c4nr06913g
NASA Astrophysics Data System (ADS)
Das, Priyanka; Mondal, Biswanath; Mukherjee, Kalisadhan
2018-01-01
Present article describes the DSSC performances of photo-anodes prepared using hydrothermal route derived ZnO particles having dissimilar morphologies i.e. simple micro-rod and nano-tips decorated micro-rod. The surface of nano-tips decorated micro-rod is uneven and patterned which facilitate more dye adsorption and better scattering of the incident light resulting superior photo-conversion efficiency (PCE) ( η 1.09%) than micro-rod ZnO ( η 0.86%). To further improve the efficiency of nano-tips decorated micro-rod ZnO based DSSC, thin passivation layer of ZnO is introduced in the corresponding photo-anode and a higher PCE ( η 1.29%) is achieved. The compact thin passivation layer here expedites the transportation of photo-excited electrons, restricts the undesired recombination reactions and prevents the direct contact of electrolyte with conducting substrates. Attempt is made to understand the effect of passivation layer on the transportation kinetics of photo-excited electrons by analyzing the electrochemical impedance spectra of the developed cells.
NASA Astrophysics Data System (ADS)
Hassanpour, A.; Guo, P.; Shen, S.; Bianucci, P.
2017-10-01
Undoped and C-doped (C: Mg2+, Ni2+, Mn2+, Co2+, Cu2+, Cr3+) ZnO nanorods were synthesized by a hydrothermal method at temperatures as low as 60 °C. The effect of doping on the morphology of the ZnO nanorods was visualized by taking their cross section and top SEM images. The results show that the size of nanorods was increased in both height and diameter by cation doping. The crystallinity change of the ZnO nanorods due to each doping element was thoroughly investigated by an x-ray diffraction (XRD). The XRD patterns show that the wurtzite crystal structure of ZnO nanorods was maintained after cation addition. The optical Raman-active modes of undoped and cation-doped nanorods were measured with a micro-Raman setup at room temperature. The surface chemistry of samples was investigated by x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy. Finally, the effect of each cation dopant on band-gap shift of the ZnO nanorods was investigated by a photoluminescence setup at room temperature. Although the amount of dopants (Mg2+, Ni2+, and Co2+) was smaller than the amount of Mn2+, Cu2+, and Cr3+ in the nanorods, their effect on the band structure of the ZnO nanorods was profound. The highest band-gap shift was achieved for a Co-doped sample, and the best crystal orientation was for Mn-doped ZnO nanorods. Our results can be used as a comprehensive reference for engineering of the morphological, structural and optical properties of cation-doped ZnO nanorods by using a low-temperature synthesis as an economical mass-production approach.
Tuomela, Soile; Autio, Reija; Buerki-Thurnherr, Tina; Arslan, Osman; Kunzmann, Andrea; Andersson-Willman, Britta; Wick, Peter; Mathur, Sanjay; Scheynius, Annika; Krug, Harald F; Fadeel, Bengt; Lahesmaa, Riitta
2013-01-01
A comprehensive in vitro assessment of two commercial metal oxide nanoparticles, TiO2 and ZnO, was performed using human monocyte-derived macrophages (HMDM), monocyte-derived dendritic cells (MDDC), and Jurkat T cell leukemia-derived cell line. TiO2 nanoparticles were found to be non-toxic whereas ZnO nanoparticles caused dose-dependent cell death. Subsequently, global gene expression profiling was performed to identify transcriptional response underlying the cytotoxicity caused by ZnO nanoparticles. Analysis was done with doses 1 µg/ml and 10 µg/ml after 6 and 24 h of exposure. Interestingly, 2703 genes were significantly differentially expressed in HMDM upon exposure to 10 µg/ml ZnO nanoparticles, while in MDDCs only 12 genes were affected. In Jurkat cells, 980 genes were differentially expressed. It is noteworthy that only the gene expression of metallothioneins was upregulated in all the three cell types and a notable proportion of the genes were regulated in a cell type-specific manner. Gene ontology analysis revealed that the top biological processes disturbed in HMDM and Jurkat cells were regulating cell death and growth. In addition, genes controlling immune system development were affected. Using a panel of modified ZnO nanoparticles, we obtained an additional support that the cellular response to ZnO nanoparticles is largely dependent on particle dissolution and show that the ligand used to modify ZnO nanoparticles modulates Zn(2+) leaching. Overall, the study provides an extensive resource of transcriptional markers for mediating ZnO nanoparticle-induced toxicity for further mechanistic studies, and demonstrates the value of assessing nanoparticle responses through a combined transcriptomics and bioinformatics approach.
Tuomela, Soile; Autio, Reija; Buerki-Thurnherr, Tina; Arslan, Osman; Kunzmann, Andrea; Andersson-Willman, Britta; Wick, Peter; Mathur, Sanjay; Scheynius, Annika; Krug, Harald F.; Fadeel, Bengt; Lahesmaa, Riitta
2013-01-01
A comprehensive in vitro assessment of two commercial metal oxide nanoparticles, TiO2 and ZnO, was performed using human monocyte-derived macrophages (HMDM), monocyte-derived dendritic cells (MDDC), and Jurkat T cell leukemia-derived cell line. TiO2 nanoparticles were found to be non-toxic whereas ZnO nanoparticles caused dose-dependent cell death. Subsequently, global gene expression profiling was performed to identify transcriptional response underlying the cytotoxicity caused by ZnO nanoparticles. Analysis was done with doses 1 µg/ml and 10 µg/ml after 6 and 24 h of exposure. Interestingly, 2703 genes were significantly differentially expressed in HMDM upon exposure to 10 µg/ml ZnO nanoparticles, while in MDDCs only 12 genes were affected. In Jurkat cells, 980 genes were differentially expressed. It is noteworthy that only the gene expression of metallothioneins was upregulated in all the three cell types and a notable proportion of the genes were regulated in a cell type-specific manner. Gene ontology analysis revealed that the top biological processes disturbed in HMDM and Jurkat cells were regulating cell death and growth. In addition, genes controlling immune system development were affected. Using a panel of modified ZnO nanoparticles, we obtained an additional support that the cellular response to ZnO nanoparticles is largely dependent on particle dissolution and show that the ligand used to modify ZnO nanoparticles modulates Zn2+ leaching. Overall, the study provides an extensive resource of transcriptional markers for mediating ZnO nanoparticle-induced toxicity for further mechanistic studies, and demonstrates the value of assessing nanoparticle responses through a combined transcriptomics and bioinformatics approach. PMID:23894303
Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.
van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert
2015-08-12
We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells.
NASA Astrophysics Data System (ADS)
Sabri, Nasehah Syamin; Lim, Eng Liang; Yap, Chi Chin; Yahaya, Muhammad; Salleh, Muhamad Mat; Jumali, Mohammad Hafizuddin Haji
2017-05-01
In this work, the effect of multiple deposition of nickel oxide (NiO) hole transport layer (HTL) on the performance of inverted type organic solar cell with a configuration of fluorine tin oxide (FTO)/zinc oxide (ZnO) nanorods/ poly(3-hexylthiopene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/NiO/silver (Ag) was investigated. The NiO nanoparticles solution was spin-coated on top of the photoactive layer (P3HT:PCBM) prior to deposition of Ag electrode. Different numbers of NiO layers (1, 2, and 4) were deposited on the photoactive layer to obtain the optimum surface morphology of HTL. The device with 2 layers of NiO exhibited the optimum power conversion efficiency of 1.10%. It is believed that the optimum NiO deposition layer gives the complete coverage at photoactive layer and forms ohmic contact between the photoactive layer and Ag electrode.
Abdelmohsen, Ahmed H; Rouby, Waleed M A El; Ismail, Nahla; Farghali, Ahmed A
2017-07-19
A new fundamental mechanism for reliable engineering of zinc oxide (ZnO) nanorods to nanoplatelets grafted Mo 8 O 23 -MoO 2 mixed oxide with controlled morphology, composition and precise understanding of the nanoscale reaction mechanism was developed. These hybrid nanomaterials are gaining interest due to their potential use for energy, catalysis, biomedical and other applications. As an introductory section, we demonstrate a new expansion for the concept 'materials engineering' by discussing the fabrication of metal oxides nanostructures by bottom-up approach and carbon nanoparticles by top-down approach. Moreover, we propose a detailed mechanism for the novel phenomenon that was experienced by ZnO nanorods when treated with phosphomolybdic acid (PMA) under ultra-sonication stimulus. This approach is expected to be the basis of a competitive fabrication approach to 2D hybrid nanostructures. We will also discuss a proposed mechanism for the catalytic deposition of Mo 8 O 23 -MoO 2 mixed oxide over ZnO nanoplatelets. A series of selection rules (SRs) which applied to ZnO to experience morphology transition and constitute Abdelmohsen theory for morphology transition engineering (ATMTE) will be demonstrated through the article, besides a brief discussion about possibility of other oxides to obey this theory.
NASA Astrophysics Data System (ADS)
Isawi, Heba; El-Sayed, Magdi H.; Feng, Xianshe; Shawky, Hosam; Abdel Mottaleb, Mohamed S.
2016-11-01
A new approach for modification of polyamid thin film composite membrane PA(TFC) using synthesized ZnO nanoparticles (ZnO NPs) was shown to enhance the membrane performances for reverse osmosis water desalination. First, active layer of synthesis PA(TFC) membrane was activated with an aqueous solution of free radical graft polymerization of hydrophilic methacrylic acid (MAA) monomer onto the surface of the PA(TFC) membrane resulting PMAA-g-PA(TFC). Second, the PA(TFC) membrane has been developed by incorporation of ZnO NPs into the MAA grafting solution resulting the ZnO NPs modified PMAA-g-PA(TFC) membrane. The surface properties of the synthesized nanoparticles and prepared membranes were investigated using the FTIR, XRD and SEM. Morphology studies demonstrated that ZnO NPs have been successfully incorporated into the active grafting layer over PA(TFC) composite membranes. The zinc leaching from the ZnO NPs modified PMAA-g-PA(TFC) was minimal, as shown by batch tests that indicated stabilization of the ZnO NPs on the membrane surfaces. Compared with the a pure PA(TFC) and PMAA-g-PA(TFC) membranes, the ZnO NPs modified PMAA-g-PA(TFC) was more hydrophilic, with an improved water contact angle (∼50 ± 3°) over the PMAA-g-PA(TFC) (63 ± 2.5°). The ZnO NPs modified PMAA-g-PA(TFC) membrane showed salt rejection of 97% (of the total groundwater salinity), 99% of dissolved bivalent ions (Ca2+, SO42-and Mg2+), and 98% of mono valent ions constituents (Cl- and Na+). In addition, antifouling performance of the membranes was determined using E. coli as a potential foulant. This demonstrates that the ZnO NPs modified PMAA-g-PA(TFC) membrane can significantly improve the membrane performances and was favorable to enhance the selectivity, permeability, water flux, mechanical properties and the bio-antifouling properties of the membranes for water desalination.
NASA Astrophysics Data System (ADS)
Velayi, Elmira; Norouzbeigi, Reza
2017-12-01
Robust superhydrophobic ZnO surfaces with micro/nano hybrid hierarchical structures were synthesized on the stainless steel mesh by a facile single-step chemical bath deposition (CBD) method without using further low surface energy materials. The Taguchi L16 experimental design was applied to evaluate the effects of reaction time, type and concentration of the additive, type of the chelating agent, and the molar ratio of the chelating agent to the initial zinc (II) ions. The prepared sample at the optimal conditions exhibited a sustainable and time-independent superhydrophobic behavior with the water contact angle (WCA) of 162.8° ± 2.5° and contact angle hysteresis (CAH) of 1.8° ± 0.5°. The XRD, SEM, TEM and FTIR analyses were used to characterize the prepared samples. Surface characterization using scanning electron microscopy (SEM) indicated accumulation of micro/nano branched ZnO needles on the substrate with the average diameters of ∼85 nm. After 20 abrasion cycles the optimum sample indicated an excellent mechanical robustness via exposure to the pressure of 4.7 kPa. A suitable chemical resistance to the acidic and basic droplets with the pH range of 4 and 9 was observed.
A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
NASA Astrophysics Data System (ADS)
Jin, Jidong; Zhang, Jiawei; Shaw, Andrew; Kudina, Valeriya N.; Mitrovic, Ivona Z.; Wrench, Jacqueline S.; Chalker, Paul R.; Balocco, Claudio; Song, Aimin; Hall, Steve
2018-02-01
Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17 × 107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13 × 1012 cm-2 eV-1, and the noise is dominated by the mechanism of a random walk of electrons at the PtO x /ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.
NASA Astrophysics Data System (ADS)
Saurdi, I.; Shafura, A. K.; Mamat, M. H.; Ishak, A.; Rusop, M.
2018-05-01
In this work, the titanium oxide (TiO2) films were deposited on glass substrate at different deposition frequencies (1, 2, 3 and 4 times) and therefore different of thicknesses been produced by using spin coating technique and their electrical and structural properties were investigated. The thicknesses of TiO2 films at different deposition frequencies (1, 2, 3 and 4 times) were 900μm, 1815μm, 2710μm and 3620μm respectively. Meanwhile, the resistivities of TiO2 films at different deposition frequencies (1, 2, 3 and 4 times) were 5.41 × 106Ωcm, 2.28 × 106Ωcm, 2.78 × 105Ωcm and 8.37 × 106Ωcm, respectively. The ZnO/TiO2 composite for ZnO nanorod and TiO2 been produced by deposited the TiO2 on top of ZnO nanorod at different deposition frequencies on ITO-coated glass substrate. The fabricated dye-sensitized solar cells of ZnO nanorod without TiO2, ZnO/TiO2 with a TiO2 thickness 900μm, ZnO/TiO2 with a TiO2 thickness 1815μm, ZnO/TiO2 with a TiO2 thickness 2710μm, ZnO/TiO2 with a TiO2 thickness 3620μm on top of ZnO nanorod were investigated. From the solar simulator measurement under AM 1.5 the solar energy conversion efficiency (η) of ZnO nanorod without TiO2, ZnO/TiO2- 900μm, ZnO/TiO2-1815μm, ZnO/TiO2-2710μm and ZnO/TiO2-3620μm were 0.99%, 1.87%, 2.11%, 2.54%, 2.27%, respectively. The DSSCs ZnO/TiO2 show better of efficiency as compared to ZnO nanorod without TiO2. Furthermore, the enhancement of ZnO/TiO2-2710μm DSSC also closely related with the improvement of electrical and structural properties of TiO2 at 3 deposition frequencies as compared with TiO2 at 1, 2 and 4 deposition frequencies.
Enhancing the Durability and Carrier Selectivity of Perovskite Solar Cells Using a Blend Interlayer.
Sin, Dong Hun; Jo, Sae Byeok; Lee, Seung Goo; Ko, Hyomin; Kim, Min; Lee, Hansol; Cho, Kilwon
2017-05-31
A mechanically and thermally stable and electron-selective ZnO/CH 3 NH 3 PbI 3 interface is created via hybridization of a polar insulating polymer, poly(ethylene glycol) (PEG), into ZnO nanoparticles (NPs). PEG successfully passivates the oxygen defects on ZnO and prevents direct contact between CH 3 NH 3 PbI 3 and defects on ZnO. A uniform CH 3 NH 3 PbI 3 film is formed on a soft ZnO:PEG layer after dispersion of the residual stress from the volume expansion during CH 3 NH 3 PbI 3 conversion. PEG also increases the work of adhesion of the CH 3 NH 3 PbI 3 film on the ZnO:PEG layer and holds the CH 3 NH 3 PbI 3 film with hydrogen bonding. Furthermore, PEG tailors the interfacial electronic structure of ZnO, reducing the electron affinity of ZnO. As a result, a selective electron-collection cathode is formed with a reduced electron affinity and a deep-lying valence band of ZnO, which significantly enhances the carrier lifetime (473 μs) and photovoltaic performance (15.5%). The mechanically and electrically durable ZnO:PEG/CH 3 NH 3 PbI 3 interface maintains the sustainable performance of the solar cells over 1 year. A soft and durable cathodic interface via PEG hybridization in a ZnO layer is an effective strategy toward flexible electronics and commercialization of the perovskite solar cells.
NASA Astrophysics Data System (ADS)
Wei, Yuefan; Du, Hejun; Kong, Junhua; Tran, Van-Thai; Koh, Jia Kai; Zhao, Chenyang; He, Chaobin
2017-11-01
Zinc oxide (ZnO) has gained much attention recently due to its excellent physical and chemical properties, and has been extensively studied in energy harvesting applications such as photovoltaic and piezoelectric devices. In recent years, its reversible wettability has also attracted increasing interest. The wettability of ZnO nanostructures with various morphologies has been studied. However, to the best of our knowledge, there is still a lack of investigations on further modifications on ZnO to provide more benefits than pristine ZnO. Comprehensive studies on the reversible wettability are still needed. In this study, a ZnO nanorod array was prepared via a hydrothermal process and subsequently coated with thin gold layers with varied thickness. The morphologies and structures, optical properties and wettability were investigated. It is revealed that the ZnO-Au system possesses recoverable wettability upon switching between visible-ultraviolet light and a dark environment, which is verified by the contact angle change. The introduction of the thin gold layer to the ZnO nanorod array effectively increases the recovery rate of the wettability. The improvements are attributed to the hierarchical structures, which are formed by depositing thin gold layers onto the ZnO nanorod array, the visible light sensitivity due to the plasmonic effect of the deposited gold, as well as the fast charge-induced surface status change upon light illumination or dark storage. The improvement is beneficial to applications in environmental purification, energy harvesting, micro-lenses, and smart devices.
Lu, Hao; Tian, Wei; Guo, Jun; Li, Liang
2015-01-01
A composite photoanode comprising ultralong ZnO nanobelts and TiO2 nanoparticles was prepared and its performance in dye-sensitized solar cells (DSSCs) was optimized and compared to the photoanode consisting of conventional TiO2 nanoparticles. The ultralong ZnO nanobelts were synthesized in high yield by a facile solution approach at 90 oC followed by annealing at 500 oC. The effect of the ratio of ZnO nanobelts to TiO2 nanoparticles on the light scattering, specific surface area, and interface recombination were investigated. An optimum amount of ZnO nanobelts enhanced the photon-conversion efficiency by 61.4% compared to that of the conventional TiO2 nanoparticles. To further reduce the recombination rate and increase the carrier lifetime, Atomic Layer Deposition (ALD) technique was utilized to coat a continuous TiO2 film surrounding the ZnO nanobelts and TiO2 nanoparticles, functioning as a barrier-free access of all electrons to conductive electrodes. This ALD treatment improved the interface contact within the whole photoanode system, finally leading to significant enhancement (137%) in the conversion efficiency of DSSCs. PMID:26238737
Hierarchical Si/ZnO trunk-branch nanostructure for photocurrent enhancement
2014-01-01
Hierarchical Si/ZnO trunk-branch nanostructures (NSs) have been synthesized by hot wire assisted chemical vapor deposition method for trunk Si nanowires (NWs) on indium tin oxide (ITO) substrate and followed by the vapor transport condensation (VTC) method for zinc oxide (ZnO) nanorods (NRs) which was laterally grown from each Si nanowires (NWs). A spin coating method has been used for zinc oxide (ZnO) seeding. This method is better compared with other group where they used sputtering method for the same process. The sputtering method only results in the growth of ZnO NRs on top of the Si trunk. Our method shows improvement by having the growth evenly distributed on the lateral sides and caps of the Si trunks, resulting in pine-leave-like NSs. Field emission scanning electron microscope image shows the hierarchical nanostructures resembling the shape of the leaves of pine trees. Single crystalline structure for the ZnO branch grown laterally from the crystalline Si trunk has been identified by using a lattice-resolved transmission electron microscope. A preliminary photoelectrochemical (PEC) cell testing has been setup to characterize the photocurrent of sole array of ZnO NR growth by both hydrothermal-grown (HTG) method and VTC method on ITO substrates. VTC-grown ZnO NRs showed greater photocurrent effect due to its better structural properties. The measured photocurrent was also compared with the array of hierarchical Si/ZnO trunk-branch NSs. The cell with the array of Si/ZnO trunk-branch NSs revealed four-fold magnitude enhancement in photocurrent density compared with the sole array of ZnO NRs obtain from VTC processes. PMID:25246872
NASA Astrophysics Data System (ADS)
Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.
2016-08-01
In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.
NASA Astrophysics Data System (ADS)
Oh, Min-Suk; Seo, Inseok
2014-04-01
Ga-doped ZnO (GZO) transparent conducting oxide was grown by oxygen plasma-enhanced pulsed laser deposition. GZO grown in the presence of oxygen radicals had resistivity of 1 × 10-3 Ω cm and average visible (500-700 nm) transmittance of 92.5%. A low specific contact resistance of 6.5 × 10-4 Ω cm2 of GZO on p-GaN was achieved by excimer laser annealing (ELA) treatment of p-GaN before GZO electrode deposition. The ELA-treated light emitting diode (LED) fabricated with the GZO electrode as a current-spreading layer resulted in light-output power enhanced by 56.2% at 100 mA compared with that fabricated with a conventional Ni/Au metal electrode. The high-light output and low degradation of light-output power were attributed to the decrease in contact resistance between the p-GaN layer and the GZO electrode and uniform current spreading over the p-GaN layer. In addition, low contact resistance results in a decrease of self-heat generation during current drive.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Scarpellini, D.; Paoloni, S.; Medaglia, P.G.
Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate andmore » metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.« less
Guerreiro-Tanomaru, Juliane Maria; Trindade-Junior, Adinael; Cesar Costa, Bernardo; da Silva, Guilherme Ferreira; Drullis Cifali, Leonardo; Basso Bernardi, Maria Inês
2014-01-01
The aim of the present study was to evaluate the antibiofilm activity against Enterococcus faecalis, compressive strength. and radiopacity of Portland cement (PC) added to zirconium oxide (ZrO2), as radiopacifier, with or without nanoparticulated zinc oxide (ZnO). The following experimental materials were evaluated: PC, PC + ZrO2, PC + ZrO2 + ZnO (5%), and PC + ZrO2 + ZnO (10%). Antibiofilm activity was analyzed by using direct contact test (DCT) on Enterococcus faecalis biofilm, for 5 h or 15 h. The analysis was conducted by using the number of colony-forming units (CFU/mL). The compressive strength was performed in a mechanical testing machine. For the radiopacity tests, the specimens were radiographed together with an aluminium stepwedge. The results were submitted to ANOVA and Tukey tests, with level of significance at 5%. The results showed that all materials presented similar antibiofilm activity (P > 0.05). The addition of nanoparticulated ZnO decreased the compressive strength of PC. All materials presented higher radiopacity than pure PC. It can be concluded that the addition of ZrO2 and ZnO does not interfere with the antibiofilm activity and provides radiopacity to Portland cement. However, the presence of ZnO (5% or 10%) significantly decreased the compressive strength of the materials. PMID:25431798
Fabrication and characterization of zinc oxide and gallium nitride based sensors
NASA Astrophysics Data System (ADS)
Wang, Hung-Ta
Pt-coated ZnO nanorods show a decrease of 8% resistance upon exposure to 500 ppm hydrogen in room temperature. This is a factor of two larger than that obtained with Pd; approximately 95% of the initial ZnO conductance was recovered within 20 s by exposing the nanorods to O2. This rapid and easy recoverability makes the ZnO nanorods suitable for ppm-level sensing at room temperature with low power consumption. Pt-gated AlGaN/GaN based high electron mobility transistors (HEMTs) showed that Schottky diode operation provides large relative sensitivity over a narrow range around turn-on voltage; the differential designed Schottky diodes with AlGaN/GaN hetero-structure was shown to provide robust detection of 1% H 2 in air at 25°C, which remove false alarms from ambient temperature variations; moreover, the use of TiB2-based Ohmic contacts on Pt-Schottky contacted AlGaN/GaN based hydrogen sensing diodes was shown to provide more stable operation. Thioglycolic acid functionalized Au-gated AlGaN/GaN based HEMTs were used to detect mercury (II) ions. A fast detection (>5 seconds) was achieved. This is the shortest response ever reported. The sensors were able to detect mercury (II) ion concentration as low as 10-7 M. The sensors showed an excellent sensing selectivity of more than 100 of detecting mercury ions over sodium, magnesium, and lead ions, but not copper. AlGaN/GaN based HEMTs were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The HEMT gate region was coated with KIM-1 antibodies and the HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline (PBS) solution. The limit of detection (LOD) was 1ng/ml using a 20 mum x50 mum gate sensing area. This approach shows a potential for both preclinical and clinical disease diagnosis with accurate, rapid, noninvasive, and high throughput capabilities. The rest of this dissertation includes ZnO band edge electroluminescence from N+-implanted ZnO bulk, and the investigation of cryogenic gold Schottky contact on GaAs for enhancing device thermal stability.
NASA Astrophysics Data System (ADS)
Yang, W. F.; Liu, Z. G.; Xie, Y. N.; Cai, J. F.; Liu, S.; Gong, H.; Wu, Z. Y.
2012-06-01
This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs.
NASA Astrophysics Data System (ADS)
Yu, Z. X.; Ma, Y. Z.; Zhao, Y. L.; Huang, J. B.; Wang, W. Z.; Moliere, M.; Liao, H. L.
2017-08-01
Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P(002). It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the "first principle calculation method" and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have favorable performances to be used as sensitive layer in gas sensing applications.
Rapid green synthesis of ZnO nanoparticles using a hydroelectric cell without an electrolyte
NASA Astrophysics Data System (ADS)
Shah, Jyoti; Kumar Kotnala, Ravinder
2017-09-01
In this study, zinc oxide (ZnO) nanoparticles were synthesized using a novel environmentally friendly hydroelectric cell without an electrolyte or external current source. The hydroelectric cell comprised a nanoporous Li substituted magnesium ferrite pellet in contact with two electrodes, with zinc as the anode and silver as an inert cathode. The surface unsaturated cations and oxygen vacancies in the nanoporous ferrite dissociated water molecules into hydronium and hydroxide ions when the hydroelectric cell was dipped into deionized water. Hydroxide ions migrated toward the zinc electrode to form zinc hydroxide and the hydronium ions were evolved as H2 gas at the silver electrode. The zinc hydroxide collected as anode mud was converted into ZnO nanoparticles by heating at 250 °C. Structural analysis using Raman spectroscopy indicated the good crystallinity of the ZnO nanoparticles according to the presence of a high intensity E2-(high) mode. The nanoparticle size distribution was 5-20 nm according to high resolution transmission electron microscopy. An indirect band gap of 2.75 eV was determined based on the Tauc plot, which indicated the existence of an interstitial cation level in ZnO. Near band edge and blue emissions were detected in photoluminescence spectral studies. The blue emissions obtained from the ZnO nanoparticles could potentially have applications in blue lasers and LEDs. The ZnO nanoparticles synthesized using this method had a high dielectric constant value of 5 at a frequency of 1 MHz, which could be useful for fabricating nano-oscillators. This facile, clean, and cost-effective method obtained a significant yield of 0.017 g for ZnO nanoparticles without applying an external current source.
Bressy, Christine; Ngo, Van Giang; Ziarelli, Fabio; Margaillan, André
2012-02-14
Functionalization of zinc oxide (ZnO) nano-objects by silane grafting is an attractive method to provide nanostructured materials with a variety of surface properties. Active hydroxyl groups on the oxide surface are one of the causes governing the interfacial bond strength in nanohybrid particles. Here, "as-prepared" and commercially available zinc oxide nanopowders with a wide range of surface hydroxyl density were functionalized by a well-known polymerizable silane coupling agent, i.e., 3-(trimethoxysilyl)propylmethacrylate (MPS). Fourier transform infrared (FTIR) and solid-state (13)C and (29)Si nuclear magnetic resonance (NMR) spectroscopic investigations demonstrated that the silane coupling agent was fully hydrolyzed and linked to the hydroxyl groups already present on the particle surface through covalent and hydrogen bonds. Due to a basic catalyzed condensation of MPS with water, a siloxane layer was shown to be anchored to the nanoparticles through mono- and tridentate structures. Quantitative investigations were performed by thermogravimetric (TGA) and elemental analyses. The amount of silane linked to ZnO particles was shown to be affected by the amount of isolated hydroxyl groups available to react on the particle surface. For as-prepared ZnO nanoparticles, the number of isolated and available hydroxyl groups per square nanometer was up to 3 times higher than the one found on commercially available ZnO nanoparticles, leading to higher amounts of polymerizable silane agent linked to the surface. The MPS molecules were shown to be mainly oriented perpendicular to the oxide surface for all the as-prepared ZnO nanoparticles, whereas a parallel orientation was found for the preheated commercially ZnO nanopowders. In addition, ZnO nanoparticles were shown to be hydrophobized by the MPS treatment with water contact angles higher than 60°.
Physical study on Cobalt-Indium Co-doped ZnO nanofilms as hydrophobic surfaces
NASA Astrophysics Data System (ADS)
Mimouni, R.; Mahdhi, N.; Boubaker, K.; Madouri, A.; Amlouk, M.
2016-03-01
The present work reports some physical investigations on (Co,In) codoped zinc oxide nanofilms deposited on glass substrates at 460 °C by the spray pyrolysis technique. The effect of Co and In concentration on the structural, morphological, optical and surface wettability properties have been investigated using X-ray diffraction (XRD) patterns, Raman spectroscopy, SEM, optical measurement, photoluminescence spectroscopy as well as the measurement of hydrophobicity in terms of water contact angle. It is found that all films crystallized in würtzite ZnO phase, with a preferentially orientation towards (002) direction parallel to c-axis. The Raman spectra of the samples exhibit the presence of E2high characteristic mode of würtzite structure with high crystallinity as well as two dominant bands 1LO and 2LO. Also, no additional modes introduced by codopoing have been found. SEM micrographs show the uniform deposition of fine grains on surface films. Thicknesses of films are less than 100 nm. In addition, optical investigations indicate that the band gap narrowing of (Co,In) codoped ZnO thin films is due to the increase in the band tail width. Indeed, PL study indicates that (Co,In) codoped ZnO nanofilms exhibit a large decrease of the UV luminescence, which is assigned to the trapping of photo-generated electrons by both In3+ and Co2+ ions as well as an improvement of charge separation in the ZnO thin films. Finally, the (Co,In) codoping influences the surface wettability property and transform the ZnO character from hydrophilic (θ < 90°) for pure ZnO nanofilm to hydrophobic (θ > 90°) for (Co,In) codoped ZnO ones.
Gao, Fei; Ma, Ningjie; Zhou, Hong; Wang, Qing; Zhang, Hao; Wang, Pu; Hou, Haoli; Wen, Huan; Li, Lijia
2016-01-01
As an engineered nanomaterial, zinc oxide nanoparticles (ZnO NPs) are used frequently in biological applications and can make contact with human skin. Here, we systematically investigated the effects of ZnO NPs on non-tumorigenic human epidermal keratinocytes, which were used as a test model for this in vitro study, at the epigenetic and molecular levels. Our results showed that ZnO NPs induced cell cycle arrest at the G2/M checkpoint before the viability of human epidermal keratinocytes was reduced, which was associated with the chromatin changes at the epigenetic level, including increased methylation of histone H3K9 and decreased acetylation of histone H4K5 accompanied by chromatin condensation at 24 hours. The mRNA expression of the methyltransferase genes G9a and GLP was also increased upon treatment with ZnO NPs, and the acetyltransferase genes GCN5, P300, and CBP were downregulated. Reactive oxygen species were found to be more abundant after treatment with ZnO NPs for 6 hours, and DNA damage was observed at 24 hours. Transmission electron microscopy and flow cytometry confirmed that ZnO NPs were absorbed into the cell when they were added to the medium. Apoptotic human epidermal keratinocytes were detected, and the expression of the proapoptotic genes Bax, Noxa, and Puma increased significantly, while the expression of the antiapoptotic gene Bcl-xl decreased 24 hours after exposure to ZnO NPs. These findings suggest that the ZnO NPs induced cell cycle arrest at G2/M, which was associated with epigenetic changes and accompanied by p53-Bax mitochondrial pathway-mediated apoptosis. PMID:27570453
Gao, Fei; Ma, Ningjie; Zhou, Hong; Wang, Qing; Zhang, Hao; Wang, Pu; Hou, Haoli; Wen, Huan; Li, Lijia
2016-01-01
As an engineered nanomaterial, zinc oxide nanoparticles (ZnO NPs) are used frequently in biological applications and can make contact with human skin. Here, we systematically investigated the effects of ZnO NPs on non-tumorigenic human epidermal keratinocytes, which were used as a test model for this in vitro study, at the epigenetic and molecular levels. Our results showed that ZnO NPs induced cell cycle arrest at the G2/M checkpoint before the viability of human epidermal keratinocytes was reduced, which was associated with the chromatin changes at the epigenetic level, including increased methylation of histone H3K9 and decreased acetylation of histone H4K5 accompanied by chromatin condensation at 24 hours. The mRNA expression of the methyltransferase genes G9a and GLP was also increased upon treatment with ZnO NPs, and the acetyltransferase genes GCN5, P300, and CBP were downregulated. Reactive oxygen species were found to be more abundant after treatment with ZnO NPs for 6 hours, and DNA damage was observed at 24 hours. Transmission electron microscopy and flow cytometry confirmed that ZnO NPs were absorbed into the cell when they were added to the medium. Apoptotic human epidermal keratinocytes were detected, and the expression of the proapoptotic genes Bax, Noxa, and Puma increased significantly, while the expression of the antiapoptotic gene Bcl-xl decreased 24 hours after exposure to ZnO NPs. These findings suggest that the ZnO NPs induced cell cycle arrest at G2/M, which was associated with epigenetic changes and accompanied by p53-Bax mitochondrial pathway-mediated apoptosis.
Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R
2018-05-07
Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.
NASA Astrophysics Data System (ADS)
Mortada, O.; Zahr, A. H.; Orlianges, J.-C.; Crunteanu, A.; Chatras, M.; Blondy, P.
2017-02-01
This paper reports on the design, simulation, fabrication, and test results of ZnO-based contour-mode micro-resonators integrating piezoelectric zinc oxide (ZnO) layers. The inter-digitated (IDT) type micro-resonators are fabricated on ZnO films and suspended top of 2 μm thick silicon membranes using silicon-on insulator technology. We analyze several possibilities of increasing the quality factor (Q) and the electromechanical coupling coefficient (kt2) of the devices by varying the numbers and lengths of the IDT electrodes and using different thicknesses of the ZnO layer. We designed and fabricated IDTs of different finger numbers (n = 25, 40, 50, and 80) and lengths (L = 100/130/170/200 μm) for three different thicknesses of ZnO films (200, 600, and 800 nm). The measured Q factor confirms that reducing the length and the number of IDT fingers enables us to reach better electrical performances at resonant frequencies around 700 MHz. The extracted results for an optimized micro-resonator device having an IDT length of 100 μm and 40 finger electrodes show a Q of 1180 and a kt2 of 7.4%. We demonstrate also that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600, respectively, around 700 MHz. Experimental data are in very good agreement with theoretical simulations of the fabricated devices
Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors
NASA Astrophysics Data System (ADS)
Remashan, Kariyadan; Hwang, Dae-Kue; Park, Seong-Ju; Jang, Jae-Hyung
2008-04-01
Thin-film transistors (TFTs) with a bottom-gate configuration were fabricated with an RF magnetron sputtered undoped zinc oxide (ZnO) channel layer and plasma-enhanced chemical vapor deposition (PECVD) grown silicon nitride as a gate dielectric. Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2O) plasma treatment were employed to improve the performance of ZnO TFTs in terms of on-current and on/off current ratio. The RTA treatment increases the on-current of the TFT significantly, but it also increases its off-current. The off-current of 2×10-8 A and on/off current ratio of 3×103 obtained after the RTA treatment were improved to 10-10 A and 105, respectively, by the subsequent N2O plasma treatment. The better device performance can be attributed to the reduction of oxygen vacancies at the top region of the channel due to oxygen incorporation from the N2O plasma. X-ray photoelectron spectroscopy (XPS) analysis of the TFT samples showed that the RTA-treated ZnO surface has more oxygen vacancies than as-deposited samples, which results in the increased drain current. The XPS study also showed that the subsequent N2O plasma treatment reduces oxygen vacancies only at the surface of ZnO so that the better off-current and on/off current ratio can be obtained.
Effect of Li doping on the electric and pyroelectric properties of ZnO thin films
NASA Astrophysics Data System (ADS)
Trinca, L. M.; Galca, A. C.; Boni, A. G.; Botea, M.; Pintilie, L.
2018-01-01
Un-doped ZnO (UDZO) and Li-doped ZnO (LZO) polycrystalline thin films were grown on platinized silicon by pulsed laser deposition (PLD). The electrical properties were investigated on as-grown and annealed UDZO and LZO films with capacitor configuration, using top and bottom platinum electrodes. In the case of the as-grown films it was found that the introduction of Li increases the resistivity of ZnO and induces butterfly shape in the C-V characteristic, suggesting ferroelectric-like behavior in LZO films. The properties of LZO samples does not significantly changes after thermal annealing while the properties of UDZO samples show significant changes upon annealing, manifested in a butterfly shape of the C-V characteristic and resistive-like switching. However, the butterfly shape disappears if long delay time is used in the C-V measurement, the characteristic remaining non-linear. Pyroelectric signal could be measured only on annealed films. Comparing the UDZO results with those obtained in the case of Li:ZnO, it was found that the pyroelectric properties are considerably enhanced by Li doping, leading to pyroelectric signal with about one order of magnitude larger at low modulation frequencies than for un-doped samples. Although the results of this study hint towards a ferroelectric-like behavior of Li doped ZnO, the presence of real ferroelectricity in this material remains controversial.
NASA Astrophysics Data System (ADS)
Ninnora Meethal, Bhabhina; Ramanarayanan, Rajita; Swaminathan, Sindhu
2018-05-01
An interesting architecture of robust, highly reproducible, template-free synthesis of phase pure carbon-incorporated short ZnO nanotubes through polymer assisted sol-gel method is presented here. These nanotubes exhibit enormous surface oxygen vacancies and mid bandgap levels confirmed by X-ray photoelectron spectroscopy. These carbon-modified nanotubes exhibit encouraging results in photocatalytic studies, as there is a 16% greater degradation of contaminant dye than in the pristine ZnO nanotube. The reactive oxygen species generated from the photocatalysts were experimentally confirmed and quantified. Super hydrophilic nature renders these nanotubes suitable for antifogging application as observed from contact angle measurements. Characterisation and mechanism of a competent material with improved photoresponse, promising greater energy efficiency and anti-fog have been described in this investigation.
Studies of drag on the nanocomposite superhydrophobic surfaces
NASA Astrophysics Data System (ADS)
Brassard, Jean-Denis; Sarkar, D. K.; Perron, Jean
2015-01-01
The nanocomposite thin films of stearic acid (SA)-functionalized ZnO nanoparticles incorporated in epoxy polymer matrix have been achieved. The X-ray diffraction (XRD) studies show the formation of zinc stearate on ZnO nanoparticles as the confirmation of SA-functionalization of ZnO nanoparticles in the thin films. Morphological analyses reveal the presence of micro-holes with the presence of irregular nanoparticles. The measured root mean square (rms) roughness of the thin film is found to be 12 ± 1 μm with the adhesion of 5B on both glass and aluminum substrates. The wetting property shows that the surface of the film is superhydrophobic with the contact angle of water of 156 ± 4° having contact angle hysteresis (CAH) of 4 ± 2°. The average terminal velocity in the water of the as-received glass spheres and superhydrophobic spheres were found to be 0.66 ± 0.01 m/s and 0.72 ± 0.01 m/s respectively. Consequently, the calculated average coefficients of the surface drag of the as-received glass sphere and superhydrophobic glass sphere were 2.30 ± 0.01 and 1.93 ± 0.03, respectively. Hence, the drag reduction on the surface of superhydrophobic glass sphere is found to be approximately 16% lower than as-received glass sphere.
Responses of human cells to ZnO nanoparticles: a gene transcription study†
Moos, Philip J.; Olszewski, Kyle; Honeggar, Matthew; Cassidy, Pamela; Leachman, Sancy; Woessner, David; Cutler, N. Shane; Veranth, John M.
2013-01-01
The gene transcript profile responses to metal oxide nanoparticles was studied using human cell lines derived from the colon and skin tumors. Much of the research on nanoparticle toxicology has focused on models of inhalation and intact skin exposure, and effects of ingestion exposure and application to diseased skin are relatively unknown. Powders of nominally nanosized SiO2, TiO2, ZnO and Fe2O3 were chosen because these substances are widely used in consumer products. The four oxides were evaluated using colon-derived cell lines, RKO and CaCo-2, and ZnO and TiO2 were evaluated further using skin-derived cell lines HaCaT and SK Mel-28. ZnO induced the most notable gene transcription changes, even though this material was applied at the lowest concentration. Nano-sized and conventional ZnO induced similar responses suggesting common mechanisms of action. The results showed neither a non-specific response pattern common to all substances nor synergy of the particles with TNF-α cotreatment. The response to ZnO was not consistent with a pronounced proinflammatory signature, but involved changes in metal metabolism, chaperonin proteins, and protein folding genes. This response was observed in all cell lines when ZnO was in contact with the human cells. When the cells were exposed to soluble Zn, the genes involved in metal metabolism were induced but the genes involved in protein refoldling were unaffected. This provides some of the first data on the effects of commercial metal oxide nanoparticles on human colon-derived and skin-derived cells. PMID:21769377
Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts
NASA Astrophysics Data System (ADS)
Zhang, Zheng; Du, Junli; Li, Bing; Zhang, Shuhao; Hong, Mengyu; Zhang, Xiaomei; Liao, Qingliang; Zhang, Yue
2017-08-01
In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.
Performance of ZnO based piezo-generators under controlled compression
NASA Astrophysics Data System (ADS)
Tao, Ran; Parmar, Mitesh; Ardila, Gustavo; Oliveira, Paulo; Marques, Daniel; Montès, Laurent; Mouis, Mireille
2017-06-01
This paper reports on the fabrication and characterization of ZnO based vertically integrated nanogenerator (VING) devices under controlled compression. The basic NG structure is a composite material integrating hydrothermally grown vertical piezoelectric zinc oxide (ZnO) nanowires (NWs) into a dielectric matrix (PMMA). A specific characterization set-up has been developed to control the applied compression and the perpendicularity of the applied force on the devices. The role of different fabrication parameters has been evaluated experimentally and compared with previously reported theoretical models, including the thickness of the top PMMA layer and the density of the NWs array in the matrix. Finally, the performance of the VING structure has been evaluated experimentally for different resistive loads obtaining a power density of 85 μW cm-3 considering only the active layer of the device. This has been compared to the performance of a commercial bulk layer of PZT (25 μW cm-3) under the same applied force of 5 N.
Salat, Marc; Petkova, Petya; Hoyo, Javier; Perelshtein, Ilana; Gedanken, Aharon; Tzanov, Tzanko
2018-06-01
An important preventive measure for providing a bacteria-free environment for the patients is the introduction of highly efficient and durable antibacterial textiles in hospitals. This work describes a single step sono-enzymatic process for coating of cotton medical textiles with antibacterial ZnO nanoparticles (NPs) and gallic acid (GA) to produce biocompatible fabrics with durable antibacterial properties. Cellulose substrates, however, need pre-activation to achieve sufficient stability of the NPs on their surface. Herein, this drawback is overcome by the simultaneous sonochemical deposition of ZnO NPs and the synthesis of a bio-based adhesive generated by the enzymatic cross-linking of GA in which the NPs were embedded. GA possesses the multiple functions of an antibacterial agent, a building block of the cross-linked phenolic network, and as a compound providing the safe contact of the coated materials with human skin. The ZnO NPs-GA coated fabrics maintained above 60% antibacterial efficacy even after 60 washing cycles at 75 °C hospital laundry regime. Copyright © 2018 Elsevier Ltd. All rights reserved.
Tsin, Fabien; Venerosy, Amélie; Vidal, Julien; Collin, Stéphane; Clatot, Johnny; Lombez, Laurent; Paire, Myriam; Borensztajn, Stephan; Broussillou, Cédric; Grand, Pierre Philippe; Jaime, Salvador; Lincot, Daniel; Rousset, Jean
2015-01-01
This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>1020 cm−3) and mobilities (up to 20 cm2 V−1 s−1) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell. PMID:25753657
Tsin, Fabien; Venerosy, Amélie; Vidal, Julien; Collin, Stéphane; Clatot, Johnny; Lombez, Laurent; Paire, Myriam; Borensztajn, Stephan; Broussillou, Cédric; Grand, Pierre Philippe; Jaime, Salvador; Lincot, Daniel; Rousset, Jean
2015-03-10
This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>10(20) cm(-3)) and mobilities (up to 20 cm(2) V(-1) s(-1)) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell.
NASA Astrophysics Data System (ADS)
Nie, Ning; Zhang, Liuyang; Fu, Junwei; Cheng, Bei; Yu, Jiaguo
2018-05-01
Photocatalytic reduction of CO2 into hydrocarbon fuels has been regarded as a promising approach to ease the greenhouse effect and the energy shortage. Herein, an electrostatic self-assembly method was exploited to prepare g-C3N4/ZnO composite microsphere. This method simply utilized the opposite surface charge of each component, achieving a hierarchical structure with intimate contact between them. A much improved photocatalytic CO2 reduction activity was attained. The CH3OH production rate was 1.32 μmol h-1 g-1, which was 2.1 and 4.1 times more than that of the pristine ZnO and g-C3N4, respectively. This facile design bestowed the g-C3N4/ZnO composite an extended light adsorption caused by multi-light scattering effect. It also guaranteed the uniform distribution of g-C3N4 nanosheets on the surface of ZnO microspheres, maximizing their advantage and synergistic effect. Most importantly, the preeminent performance was proposed and validated based on the direct Z-scheme. The recombination rate was considerably suppressed. This work features the meliority of constructing hierarchical direct Z-scheme structures in photocatalytic CO2 reduction reactions.
Investigation of the non-volatile resistance change in noncentrosymmetric compounds
Herng, T. S.; Kumar, A.; Ong, C. S.; Feng, Y. P.; Lu, Y. H.; Zeng, K. Y.; Ding, J.
2012-01-01
Coexistence of polarization and resistance-switching characteristics in single compounds has been long inspired scientific and technological interests. Here, we report the non-volatile resistance change in noncentrosymmetric compounds investigated by using defect nanotechnology and contact engineering. Using a noncentrosymmetric material of ZnO as example, we first transformed ZnO into high resistance state. Then ZnO electrical polarization was probed and its domains polarized 180° along the [001]-axis with long-lasting memory effect (>25 hours). Based on our experimental observations, we have developed a vacancy-mediated pseudoferroelectricity model. Our first-principle calculations propose that vacancy defects initiate a spontaneous inverted domains nucleation at grain boundaries, and then they grow in the presence of an electrical field. The propagation of inverted domains follows the scanning tip motion under applied electrical field, leading to the growth of polarized domains over large areas. PMID:22905318
A Novel Ionic Polymer Metal ZnO Composite (IPMZC)
Kim, Sang-Mun; Tiwari, Rashi; Kim, Kwang J.
2011-01-01
The presented research introduces a new Ionic Polymer-Metal-ZnO Composite (IPMZC) demonstrating photoluminescence (PL)-quenching on mechanical bending or application of an electric field. The newly fabricated IPMZC integrates the optical properties of ZnO and the electroactive nature of Ionic Polymer Metal Composites (IPMC) to enable a non-contact read-out of IPMC response. The electro-mechano-optical response of the IPMZC was measured by observing the PL spectra under mechanical bending and electrical regimes. The working range was measured to be 375–475 nm. It was noted that the PL-quenching increased proportionally with the increase in curvature and applied field at 384 and 468 nm. The maximum quenching of 53.4% was achieved with the membrane curvature of 78.74/m and 3.01% when electric field (12.5 × 103 V/m) is applied. Coating IPMC with crystalline ZnO was observed to improve IPMC transduction. PMID:22163869
Karki Gautam, Laxmi; Junda, Maxwell M.; Haneef, Hamna F.; Collins, Robert W.; Podraza, Nikolas J.
2016-01-01
Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H) PV device configuration. The nucleation and evolution of crystallites forming from the amorphous phase were studied using in situ near-infrared to ultraviolet spectroscopic ellipsometry during growth of films prepared as a function of hydrogen to reactive gas flow ratio R = [H2]/[SiH4]. In conjunction with higher photon energy measurements, the presence and relative absorption strength of silicon-hydrogen infrared modes were measured by infrared extended ellipsometry measurements to gain insight into chemical bonding. Structural and optical models have been developed for the back reflector (BR) structure consisting of sputtered undoped zinc oxide (ZnO) on top of silver (Ag) coated glass substrates. Characterization of the free-carrier absorption properties in Ag and the ZnO + Ag interface as well as phonon modes in ZnO were also studied by spectroscopic ellipsometry. Measurements ranging from 0.04 to 5 eV were used to extract layer thicknesses, composition, and optical response in the form of complex dielectric function spectra (ε = ε1 + iε2) for Ag, ZnO, the ZnO + Ag interface, and undoped a-Si:H layer in a substrate n-i-p a-Si:H based PV device structure. PMID:28773255
One-dimensional zinc oxide nanomaterials synthesis and photovoltaic applications
NASA Astrophysics Data System (ADS)
Weintraub, Benjamin A.
As humanly engineered materials systems approach the atomic scale, top-down manufacturing approaches breakdown and following nature's example, bottom-up or self-assembly methods have the potential to emerge as the dominant paradigm. Synthesis of one-dimensional nanomaterials takes advantage of such self-assembly manufacturing techniques, but until now most efforts have relied on high temperature vapor phase schemes which are limited in scalability and compatibility with organic materials. The solution-phase approach is an attractive low temperature alternative to overcome these shortcomings. To this end, this thesis is a study of the rationale solution-phase synthesis of ZnO nanowires and applications in photovoltaics. The following thesis goals have been achieved: rationale synthesis of a single ZnO nanowire on a polymer substrate without seeding, design of a wafer-scale technique to control ZnO nanowire array density using layer-by-layer polymers, determination of optimal nanowire field emitter density to maximize the field enhancement factor, design of bridged nanowires across metal electrodes to order to circumvent post-synthesis manipulation steps, electrical characterization of bridged nanowires, rationale solution-phase synthesis of long ZnO nanowires on optical fibers, fabrication of ZnO nanowire dye-sensitized solar cells on optical fibers, electrical and optical characterization of solar cell devices, comparison studies of 2-D versus 3-D nanowire dye-sensitized solar cell devices, and achievement of 6-fold solar cell power conversion efficiency enhancement using a 3-D approach. The thesis results have implications in nanomanufacturing scale-up and next generation photovoltaics.
NASA Astrophysics Data System (ADS)
Wright, N.; Mateo-Feliciano, D.; Ostoski, A.; Mukherjee, P.; Witanachchi, S.
Nanosphere lithography is a combination of different methods to nanofabrication. In this work nanosphere lithography is used to study the growth of Zinc Oxide Nano-columns (ZnO NCs) on different diameter Silica Nanosphere (SNS) self-assembled templates. ZnO NCs are promising building blocks for many existing and emerging optical, electrical, and piezoelectric devices, specifically, the seeded growth of other oxide materials. Recently, reports have shown a ferroelectric phase of zinc stannate (ZnSnO3) and while lead zirconium titanate oxide (PZT) has been the main material of interest in ferroelectric and piezoelectric applications, the toxicity of lead has been of great concern. The possibility of developing lead free piezoelectric materials is of great interest in the ferroelectric community. Langmuir-Blodgett method was used to construct a self-assembled monolayer of SNSs on silicon substrates. Oriented ZnO NCs were grown on top of the spheres using the glancing angle pulsed laser deposition technique. Columns were formed in a spatially ordered closed-packed hexagonal configuration. Growth of ZnO NCs was studied as function of ambient Oxygen pressure with SNS size ranging from 250-1000 nm. Cross-sectional Scanning Electron Microscopy and X-ray diffraction (XRD) were used to study the template structure. Relative aspect ratios were studied and showed tunability of column dimensions with sphere size. XRD revealed ZnO NC arrays were c-axis oriented with hexagonal wurtzite structure.
Garcia, Isadora Martini; Leitune, Vicente Castelo Branco; Visioli, Fernanda; Samuel, Susana Maria Werner; Collares, Fabrício Mezzomo
2018-06-01
To evaluate the influence of zinc oxide quantum dots (ZnO QDs ) into an experimental adhesive resin regarding the antibacterial activity against Streptococcus mutans and the cytotoxicity against pulp fibroblasts. ZnO QDs were synthesized by sol-gel process and were incorporated into 2-hydroxyethyl methacrylate (HEMA). An experimental adhesive resin was formulated by mixing 66.6 wt.% bisphenol A glycol dimethacrylate (BisGMA) and 33.3 wt.% HEMA with a photoinitiator system as control group. HEMA containing ZnO QDs was used for test group formulation. For the antibacterial activity assay, a direct contact inhibition evaluation was performed with biofilm of Streptococcus mutans (NCTC 10449). The cytotoxicity assay was performed by Sulforhodamine B (SRB) colorimetric assay for cell density determination using pulp fibroblasts. Data were analyzed by Student's t-test (α = 0.05). The antibacterial activity assay indicated statistically significant difference between the groups (p = 0.003), with higher values of biofilm formation on the polymerized samples of control group and a reduction of more than 50% of biofilm formation on ZnO QDs group. No difference of pulp fibroblasts viability was found between the adhesives (p = 0.482). ZnO QDs provided antibacterial activity when doped into an experimental adhesive resin without cytotoxic effect for pulp fibroblasts. Thus, the use of ZnO QDs is a strategy to develop antibiofilm restorative polymers with non-agglomerated nanofillers. ZnO QDs are non-agglomerated nanoscale fillers for dental resins and may be a strategy to reduce biofilm formation at dentin/restoration interface with no cytotoxicity for pulp fibroblasts. Copyright © 2018 Elsevier Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Zhang, Haibao; Wang, Jingjing; Wang, Hua; Tian, Xingyou
2017-09-01
In this paper, we presented the fabrication of mace-like gold hollow hierarchical micro/nanostructures (HMNs) grafted on ZnO nanorods array by using an electrochemical deposition in chloroauric acid solution on gold layer pre-coated ZnO nanorods array. Different from general electrochemical deposition process, the catalytic etching to ZnO and electrodeposition of gold are co-existed in our case, which lead to an inner hollow structure and an outer gold shell. Due to the appropriate electrodeposition conditions, the outer gold shell was built of many wimble-like nanoparticles, and the hierarchical micro/nanostructures were thus formed. In addition, because of the deposition rate is decreased gradually away from the top of ZnO nanorods, the final structures show mace-like appearance. The surface-enhanced Raman scattering (SERS) effect of the as-prepared gold hollow HMNs was further studied by using rhodamine 6G as probe molecule. It is demonstrated that these structures show ultrahigh SERS activity, and the detecting low limit of R6G solution can be to 10-10 M on single mace-like gold HMNs, which is quite important for their potential application in SERS-based surface analysis and sensors.
NASA Astrophysics Data System (ADS)
Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Gur, Emre; Kocak, Yusuf
2018-01-01
Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires' layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm2 under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.
Harvesting Mechanical and Thermal Energy by Combining ZnO Nanowires and NiTi Shape Memory Alloy
Radousky, Harry; Qian, Fang; An, Yonghao; ...
2017-02-19
In the expanding world of small scale energy harvesting, the ability to combine thermal and mechanical harvesting is growing ever more important. Here, we demonstrate the feasibility of using ZnO nanowires to harvest both mechanical and low-quality thermal energy in simple, scalable devices. These devices were fabricated on kapton films and used ZnO nanowires with the same growth direction to assure alignment of the piezoelectric potentials of all of the wires. Mechanical harvesting from these devices was demonstrated using a periodic application of force, modeling the motion of the human body. Tapping the device from the top of the devicemore » with a wood stick, for example yielded an Open Circuit Voltage (OCV) of 0.2 - 4 V, which is in an ideal range for device applications. In order to demonstrate thermal harvesting from low quality heat sources, a commercially available Nitinol (Ni-Ti alloy) foil was attached to the nanowire piezoelectric device to create a compound thermoelectric. When bent at room temperature and then heated to 50°C, the Nitinol foil was restored to its original flat shape, which yielded an output voltage of nearly 1 V from the ZnO nanowire device.« less
Harvesting Mechanical and Thermal Energy by Combining ZnO Nanowires and NiTi Shape Memory Alloy
DOE Office of Scientific and Technical Information (OSTI.GOV)
Radousky, Harry; Qian, Fang; An, Yonghao
In the expanding world of small scale energy harvesting, the ability to combine thermal and mechanical harvesting is growing ever more important. Here, we demonstrate the feasibility of using ZnO nanowires to harvest both mechanical and low-quality thermal energy in simple, scalable devices. These devices were fabricated on kapton films and used ZnO nanowires with the same growth direction to assure alignment of the piezoelectric potentials of all of the wires. Mechanical harvesting from these devices was demonstrated using a periodic application of force, modeling the motion of the human body. Tapping the device from the top of the devicemore » with a wood stick, for example yielded an Open Circuit Voltage (OCV) of 0.2 - 4 V, which is in an ideal range for device applications. In order to demonstrate thermal harvesting from low quality heat sources, a commercially available Nitinol (Ni-Ti alloy) foil was attached to the nanowire piezoelectric device to create a compound thermoelectric. When bent at room temperature and then heated to 50°C, the Nitinol foil was restored to its original flat shape, which yielded an output voltage of nearly 1 V from the ZnO nanowire device.« less
Kim, Chohui; Choi, Hongsik; Kim, Jae Ik; Lee, Sangheon; Kim, Jinhyun; Lee, Woojin; Hwang, Taehyun; Kang, Suji; Moon, Taeho; Park, Byungwoo
2014-01-01
A scattering layer is utilized by mixing nanoporous spheres and nanoparticles in ZnO-based dye-sensitized solar cells. Hundred-nanometer-sized ZnO spheres consisting of approximately 35-nm-sized nanoparticles provide not only effective light scattering but also a large surface area. Furthermore, ZnO nanoparticles are added to the scattering layer to facilitate charge transport and increase the surface area as filling up large voids. The mixed scattering layer of nanoparticles and nanoporous spheres on top of the nanoparticle-based electrode (bilayer geometry) improves solar cell efficiency by enhancing both the short-circuit current (J sc) and fill factor (FF), compared to the layer consisting of only nanoparticles or nanoporous spheres.
NASA Astrophysics Data System (ADS)
Liu, Weizhen; Wang, Wei; Xu, Haiyang; Li, Xinghua; Yang, Liu; Ma, Jiangang; Liu, Yichun
2015-09-01
A simple top electrode preparation process, employing continuous graphene oxide films as electrode supporting layers, was adopted to fabricate a ZnO nanorod array/p-GaN heterojunction LED. The achieved LED demonstrated different electroluminescence behaviors under forward and reverse biases: a yellow-red emission band was observed under forward bias, whereas a blue-UV emission peak was obtained under reverse bias. Electroluminescence spectra under different currents and temperatures, as well as heterojunction energy-band alignments, reveal that the yellow-red emission under forward bias originates from recombinations related to heterointerface defects, whereas the blue-UV electroluminescence under reverse bias is ascribed to transitions from near-band-edge and Mg-acceptor levels in p-GaN.
NASA Astrophysics Data System (ADS)
Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.
2009-11-01
We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.
Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors
DOE Office of Scientific and Technical Information (OSTI.GOV)
Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp; Fukuda, Hiroshi
We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on opticalmore » anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.« less
1982-05-01
semiconductor Schottky-barrier contacts are used in many semiconductor devices, including switches, rectifiers, varactors , IMPATTs, mixer and detector...ionic materials such as most of the II-VI compound semiconductors (e.g. ZnS and ZnO) and the transition-metal oxides , the barrier height is strongly...the alloying process described above is nonuniformity, due to the incomplete removal of residual surface oxides prior to the evaporation of the metal
The Fate of Polyol-Made ZnO and CdS Nanoparticles in Seine River Water (Paris, France).
da Rocha, Alice; Sivry, Yann; Gelabert, Alexandre; Beji, Zyed; Benedetti, Marc F; Menguy, Nicolas; Brayner, Roberta
2015-05-01
This study aims to characterize nanoparticles with different compositions and structures as well as seeing their evolutions over time in a natural environment such as Seine river water (Paris, France). Face centered cubic (fcc) and hexagonal (hcp) CdS as well as hexagonal (hcp) ZnO nanoparticles were synthesized by the Polyol method. CdS nanoparticles (i) cfc structure: are agglomerated, present 100 nm length with heterogeneous diameter and 10 m2 g(-1) specific surface area (S(g)) from Brunauer Emett and Teller (BET) measurements; (ii) hcp structure: 20 nm and S(g) = 67 m2 g(-1). ZnO hcp nanoparticles presents 50 nm length and 15 nm diameter and S(g) = 54 m2 g(-1). These results are in agreement with X-ray diffraction (XRD), and small angle X-ray scattering (SAXs). After 48 h interaction with Seine river water, cryo-TEM analysis showed that ZnO nanoparticles form spherical agglomerates with 300 nm diameter; CdS nanoparticles (fcc) are agglomerated presenting large diameters (> 500 nm); and CdS nanoparticles (hcp) are not agglomerated and present the same characteristics of the starting material. After 168h of contact with Seine river water, CdS (fcc) presents only 14% of dissolution, CdS (hcp) presents both 60% dissolution and 30% reprecipitation in a cadmium carbonate form and finally almost 90% of ZnO nanoparticles are dissolved.
Growth of ZnO nanowires on polypropylene membrane surface-Characterization and reactivity
NASA Astrophysics Data System (ADS)
Bojarska, Marta; Nowak, Bartosz; Skowroński, Jarosław; Piątkiewicz, Wojciech; Gradoń, Leon
2017-01-01
Need for a new membrane is clearly visible in recent studies, mostly due to the fouling phenomenon. Authors, focused on problem of biofouling caused by microorganisms that are present in water environment. An attempt to form a new membrane with zinc oxide (ZnO) nanowires was made; where plasma treatment was used as a first step of modification followed by chemical bath deposition. Such membrane will exhibit additional reactive properties. ZnO, because of its antibacterial and photocatalytic properties, is more and more often used in commercial applications. The authors used SEM imaging, measurement of the contact angle, XRD and the FT-IR analysis for membrane characterization. Amount of ZnO deposited on membrane surface was also investigated by dithizone method. Photocatalytic properties of such membranes were examined through methylene blue and humic acid degradation in laboratory scale modules with LEDs as either: wide range white or UV light source. Antibacterial and antifouling properties of polypropylene membranes modified with ZnO nanowires were examined through a series of tests involving microorganisms: model gram-positive and -negative bacteria. The obtained results showed that it is possible to modify the membrane surface in such a way, that additional reactive properties will be given. Thus, not only did the membrane become a physical barrier, but also turned out to be a reactive one.
NASA Astrophysics Data System (ADS)
Davydova, A.; Tselikov, G.; Dilone, D.; Rao, K. V.; Kabashin, A. V.; Belova, L.
2018-02-01
We report the manufacturing of thin zinc oxide films by reactive magnetron sputtering at room temperature, and examine their structural and optical properties. We show that the partial oxygen pressure in DC mode can have dramatic effect on absorption and refractive index (RI) of the films in a broad spectral range. In particular, the change of the oxygen pressure from 7% to 5% can lead to either conventional crystalline ZnO films having low absorption and characteristic descending dependence of RI from 2.4-2.7 RIU in the visible to 1.8-2 RIU in the near-infrared (1600 nm) range, or to untypical films, composed of ZnO nano-crystals embedded into amorphous matrix, exhibiting unexpectedly high absorption in the visible-infrared region and ascending dependence of RI with values varying from 1.5 RIU in the visible to 4 RIU in the IR (1600 nm), respectively. Untypical optical characteristics in the second case are explained by defects in ZnO structure arising due to under-oxidation of ZnO crystals. We also show that the observed defect-related film structure remains stable even after annealing of films under relatively high temperatures (30 min under 450 °C). We assume that both types of films can be of importance for photovoltaic (as contact or active layers, respectively), as well as for chemical or biological sensing, optoelectronics etc.
NASA Astrophysics Data System (ADS)
Mironava, Tatsiana; Applebaum, Ariella; Applebaum, Eliana; Guterman, Shoshana; Applebaum, Kayla; Grossman, Daniel; Gordon, Chris; Brink, Peter; Wang, H. Z.; Rafailovich, Miriam
2013-03-01
The importance of titanium dioxide (TiO2) and zinc oxide (ZnO), inorganic metal oxides nanoparticles (NPs) stems from their ubiquitous applications in personal care products, solar cells and food whitening agents. Hence, these NPs come in direct contact with the skin, digestive tracts and are absorbed into human tissues. Currently, TiO2 and ZnO are considered safe commercial ingredients by the material safety data sheets with no reported evidence of carcinogenicity or ecotoxicity, and do not classify either NP as a toxic substance. This study examined the direct effects of TiO2 and ZnO on HeLa cells, a human cervical adenocarcinonma cell line, and their membrane mechanics. The whole cell patch-clamp technique was used in addition to immunohistochemistry staining, TEM and atomic force microscopy (AFM). Additionally, we examined the effects of dexamethasone (DXM), a glucocorticoid steroid known to have an effect on cell membrane mechanics. Overall, TiO2 and ZnO seemed to have an adverse effect on cell membrane mechanics by effecting cell proliferation, altering cellular structure, decreasing cell-cell adhesion, activating existing ion channels, increasing membrane permeability, and possibly disrupting cell signaling.
2013-01-01
Effect of different type of organic compounds (humic acid, oxalate, ethylenediaminetetraacetic acid, nitrilotriacetic acid, phenol) on the photocatalytic removal of cyanide with TiO2 or ZnO was studied in this work with variation of the solution pH, contact time, initial cyanide concentration and type of organic compounds. Photocatalytic oxidation efficiency of cyanide with TiO2 was greatly affected by the solution pH. It increased as the solution pH decreased. Also maximum removal of cyanide by ZnO was observed near at neutral pH because of the reduced photocatalytic activity of ZnO at exceedingly low and high pH values originated from either acidic/photochemical corrosion of the catalyst and/or surface passivation with Zn(OH)2. Removal efficiency of cyanide greatly decreased in the presence of humic acid, ethylenediaminetetraacetic acid, nitrilotriacetic acid compared to that without presence of organic compound because of the competitive oxidation as well as surface blocking by relatively large organic compounds. The oxidation pattern of cyanide was better described by first-order kinetic model. Finally photocatalytic reaction with TiO2 or ZnO can be effectively applied to treat synthetic wastewater contaminated with cyanide. PMID:24499704
NASA Astrophysics Data System (ADS)
Yen, Kuo-Yi; Chiu, Chien-Hua; Hsiao, Chi-Ying; Li, Chun-Wei; Chou, Chien-Hua; Lo, Ko-Ying; Chen, Tzu-Pei; Lin, Chu-Hsien; Lin, Tai-Yuan; Gong, Jyh-Rong
2014-02-01
Ga-doped ZnO (GZO) and In-doped ZnO (IZO) films were prepared by atomic layer deposition (ALD), and the ALD-grown GZO (or IZO) films with (or without) N2 annealing were employed to serve as transparent conducting layers (TCLs) in InGaN/GaN (multiple quantum well) MQW LEDs. Based on θ-to-2θ X-ray diffraction (XRD) analyses, the N2-annealed GZO was found to show almost the same lattice constant c as ZnO does, while the lattice constant c of a N2-annealed IZO was detected to be larger than that of the ZnO. It appears that the implementation of N2-annealed ALD-grown GZO (or IZO) in an InGaN/GaN MQW LED allows to enable light extraction and forward voltage reduction of the LED under certain conditions. At 20 mA operating condition, the 400 °C N2-annealed n-GZO-coated and the 600 °C N2-annealed n-IZO-coated InGaN/GaN MQW LEDs were found to exhibit optimized forward voltages of 3.1 and 3.2 V, respectively, with the specific contact resistances of the n-GZO/p-GaN and n-IZO/p-GaN contacts being 4.1×10-3 and 8.8×10-3 Ω-cm2. By comparing with an InGaN/GaN MQW LED structure having a commercial-grade indium tin oxide (ITO) TCL, the 400 °C N2-annealed n-GZO-coated InGaN/GaN MQW LED shows an increment of light output power of 15% at 20 mA. It is believed that the enhanced light extraction of the n-GZO-coated InGaN/GaN MQW LED is due to a higher refractive index of n-GZO than that of ITO along with a comparable optical transmittance of n-GZO to that of ITO.
Yao, Yung-Chi; Hwang, Jung-Min; Yang, Zu-Po; Haung, Jing-Yu; Lin, Chia-Ching; Shen, Wei-Chen; Chou, Chun-Yang; Wang, Mei-Tan; Huang, Chun-Ying; Chen, Ching-Yu; Tsai, Meng-Tsan; Lin, Tzu-Neng; Shen, Ji-Lin; Lee, Ya-Ju
2016-01-01
Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP. PMID:26935648
Valency configuration of transition metal impurities in ZnO
DOE Office of Scientific and Technical Information (OSTI.GOV)
Petit, Leon; Schulthess, Thomas C; Svane, Axel
2006-01-01
We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM=Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn{sub 1-x}TM{sub x}O, the localized TM{sup 2+} configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy {epsilon}F close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with {epsilon}F close to themore » valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.« less
Yang, Daejong; Kang, Kyungnam; Kim, Donghwan; Li, Zhiyong; Park, Inkyu
2015-01-01
A facile top-down/bottom-up hybrid nanofabrication process based on programmable temperature control and parallel chemical supply within microfluidic platform has been developed for the all liquid-phase synthesis of heterogeneous nanomaterial arrays. The synthesized materials and locations can be controlled by local heating with integrated microheaters and guided liquid chemical flow within microfluidic platform. As proofs-of-concept, we have demonstrated the synthesis of two types of nanomaterial arrays: (i) parallel array of TiO2 nanotubes, CuO nanospikes and ZnO nanowires, and (ii) parallel array of ZnO nanowire/CuO nanospike hybrid nanostructures, CuO nanospikes and ZnO nanowires. The laminar flow with negligible ionic diffusion between different precursor solutions as well as localized heating was verified by numerical calculation and experimental result of nanomaterial array synthesis. The devices made of heterogeneous nanomaterial array were utilized as a multiplexed sensor for toxic gases such as NO2 and CO. This method would be very useful for the facile fabrication of functional nanodevices based on highly integrated arrays of heterogeneous nanomaterials. PMID:25634814
Stretchable Random Lasers with Tunable Coherent Loops.
Sun, Tzu-Min; Wang, Cih-Su; Liao, Chi-Shiun; Lin, Shih-Yao; Perumal, Packiyaraj; Chiang, Chia-Wei; Chen, Yang-Fang
2015-12-22
Stretchability represents a key feature for the emerging world of realistic applications in areas, including wearable gadgets, health monitors, and robotic skins. Many optical and electronic technologies that can respond to large strain deformations have been developed. Laser plays a very important role in our daily life since it was discovered, which is highly desirable for the development of stretchable devices. Herein, stretchable random lasers with tunable coherent loops are designed, fabricated, and demonstrated. To illustrate our working principle, the stretchable random laser is made possible by transferring unique ZnO nanobrushes on top of polydimethylsiloxane (PDMS) elastomer substrate. Apart from the traditional gain material of ZnO nanorods, ZnO nanobrushes were used as optical gain materials so they can serve as scattering centers and provide the Fabry-Perot cavity to enhance laser action. The stretchable PDMS substrate gives the degree of freedom to mechanically tune the coherent loops of the random laser action by changing the density of ZnO nanobrushes. It is found that the number of laser modes increases with increasing external strain applied on the PDMS substrate due to the enhanced possibility for the formation of coherent loops. The device can be stretched by up to 30% strain and subjected to more than 100 cycles without loss in laser action. The result shows a major advance for the further development of man-made smart stretchable devices.
Enhanced Photoelectrocatalytic Activity of BiOI Nanoplate-Zinc Oxide Nanorod p-n Heterojunction.
Kuang, Pan-Yong; Ran, Jing-Run; Liu, Zhao-Qing; Wang, Hong-Juan; Li, Nan; Su, Yu-Zhi; Jin, Yong-Gang; Qiao, Shi-Zhang
2015-10-19
The development of highly efficient and robust photocatalysts has attracted great attention for solving the global energy crisis and environmental problems. Herein, we describe the synthesis of a p-n heterostructured photocatalyst, consisting of ZnO nanorod arrays (NRAs) decorated with BiOI nanoplates (NPs), by a facile solvothermal method. The product thus obtained shows high photoelectrochemical water splitting performance and enhanced photoelectrocatalytic activity for pollutant degradation under visible light irradiation. The p-type BiOI NPs, with a narrow band gap, not only act as a sensitizer to absorb visible light and promote electron transfer to the n-type ZnO NRAs, but also increase the contact area with organic pollutants. Meanwhile, ZnO NRAs provide a fast electron-transfer channel, thus resulting in efficient separation of photoinduced electron-hole pairs. Such a p-n heterojunction nanocomposite could serve as a novel and promising catalyst in energy and environmental applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
ZnO nanoneedle/H2O solid-liquid heterojunction-based self-powered ultraviolet detector
2013-01-01
ZnO nanoneedle arrays were grown vertically on a fluorine-doped tin oxide-coated glass by hydrothermal method at a relatively low temperature. A self-powered photoelectrochemical cell-type UV detector was fabricated using the ZnO nanoneedles as the active photoanode and H2O as the electrolyte. This solid-liquid heterojunction offers an enlarged ZnO/water contact area and a direct pathway for electron transport simultaneously. By connecting this UV photodetector to an ammeter, the intensity of UV light can be quantified using the output short-circuit photocurrent without a power source. High photosensitivity, excellent spectral selectivity, and fast photoresponse at zero bias are observed in this UV detector. The self-powered behavior can be well explained by the formation of a space charge layer near the interface of the solid-liquid heterojunction, which results in a built-in potential and makes the solid-liquid heterojunction work in photovoltaic mode. PMID:24103153
Piezoelectric potential gated field-effect transistor based on a free-standing ZnO wire.
Fei, Peng; Yeh, Ping-Hung; Zhou, Jun; Xu, Sheng; Gao, Yifan; Song, Jinhui; Gu, Yudong; Huang, Yanyi; Wang, Zhong Lin
2009-10-01
We report an external force triggered field-effect transistor based on a free-standing piezoelectric fine wire (PFW). The device consists of an Ag source electrode and an Au drain electrode at two ends of a ZnO PFW, which were separated by an insulating polydimethylsiloxane (PDMS) thin layer. The working principle of the sensor is proposed based on the piezoelectric potential gating effect. Once subjected to a mechanical impact, the bent ZnO PFW cantilever creates a piezoelectric potential distribution across it width at its root and simultaneously produces a local reverse depletion layer with much higher donor concentration than normal, which can dramatically change the current flowing from the source electrode to drain electrode when the device is under a fixed voltage bias. Due to the free-standing structure of the sensor device, it has a prompt response time less than 20 ms and quite high and stable sensitivity of 2%/microN. The effect from contact resistance has been ruled out.
Synthesis of ZnO nanowires for thin film network transistors
NASA Astrophysics Data System (ADS)
Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.
2008-08-01
Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.
2014-01-01
Hollow-sphere bilayer nanofilm-based ultraviolet light photodetectors made from ZnO and ZnS spherical nanoshells show enhanced photocurrent, which are comparable to or even better than those of other semiconductor nanostructures with different shapes. In this work, the photocurrent enhancement mechanisms of these bilayer nanofilm-based ultraviolet light photodetectors are explained, which could be attributed to the strong light absorption based on the whispering gallery mode resonances, the separation of the photogenerated carriers through the internal electric field within the bilayer nanofilms, the hopping-like electrical transport, and the effective charge injection from Cr/Au contacts to the nanofilms. PMID:25136287
Contact Resistance and Stability Analysis of Oxide-Based Thin Film Transistors
2006-09-19
layer (~ 50 nm) is deposited via RF magnetron sputtering from a 2 inch target (Cerac, Inc.; ZnO and IGO (1:1 molar ratio of In2O3: Ga2O3 )) at a pressure...10.2 600 ~ 50 IGO (1:1, In2O3: Ga2O3 ) 90%/10% 5 ~ 3.7 ~ 10.2 600 ~ 50 Table 4.1: Summary of process parameters for TFTs fabricated on thermal silicon...oxide and furnace annealed. Channel Material Wet Etch Etch Rate ZnO ~ 0.01 M HCl ~ 17.5 Å/s IGO (1:1, In2O3: Ga2O3 ) ~ 2 M HCl ~ 6.3 Å/s
Influence of ZnO nanostructures in liquid crystal interfaces for bistable switching applications
NASA Astrophysics Data System (ADS)
Pal, Kaushik; Zhan, Bihong; Madhu Mohan, M. L. N.; Schirhagl, Romana; Wang, Guoping
2015-12-01
The controlled fabrication of nanometer-scale objects is without doubt one of the central issues in current science and technology. In this article, we exhibit a simple, one-step bench top synthesis of zinc oxide nano-tetrapods and nano-spheres which were tailored by the facial growth of nano-wires (diameter ≈ 24 nm; length ≈ 118 nm) and nano-cubes (≈395 nm edge) to nano-sphere (diameter ≈ 585 nm) appeaded. The possibilities of inexpensive, simple solvo-chemical synthesis of nanostructures were considered. In this article, a successful attempt has been made that ZnO nano-structures dispersed on well aligned hydrogen bonded liquid crystals (HBLC) comprising azelaic acid (AC) with p-n-alkyloxy benzoic acid (nBAO) by varying the respective alkyloxy carbon number (n = 5). The dispersion of nanomaterials with HBLC is an effective route to enhance the existing functionalities. A series of these composite materials were analyzed by polarizing optical microscope's electro-optical switching. An interesting feature of AC + nBAO is the inducement of tilted smectic G phase with increasing carbon chain length. Phase diagrams of the above hybrid ZnO nanomaterial influenced LC complex and pure LC were constructed and compared. The switching times, the contrast ratio and spontaneous polarization of the nanostructures-HBLC composite film were carried out by systematic investigation. The sample preparation parameters, such as the curing time and curing intensity were optimized. The critical applied voltage to achieve the switching bi-stability of our device is only 4.5 V, which is approximately twice its threshold voltage for Freedericksz transition. This performance puts the hybrid structure at the top level in the state of the art in application oriented research in optics of liquid crystalline composite materials.
Beshkar, Farshad; Khojasteh, Hossein; Salavati-Niasari, Masoud
2017-01-01
In this work we have demonstrated a facile formation of CuO nanostructures on copper substrates by the oxidation of copper foil in ethylene glycol (EG) at 80 °C. On immersing a prepared CuO film into a solution containing 0.1 g Zn(acac)2 in 20 mL EG for 8 h, ZnO flower-like microstructures composed of hierarchical three-dimensional (3D) aggregated nanoparticles and spherical architectures were spontaneously formed at 100 °C. The as-synthesized thin films and 3D microstructures were characterized using XRD, SEM, and EDS techniques. The effects of sodium dodecyl sulphate (SDS), cetyltrimethylammonium bromide (CTAB), and polyethylene glycol (PEG) 6000 as surfactants and stabilizers on the morphology of the CuO and ZnO structures were discussed. Possible growth mechanisms for the controlled organization of primary building units into CuO nanostructures and 3D flower-like ZnO architectures were proposed. The hydrophobic property of the products was characterized by means of water contact angle measurement. After simple surface modification with stearic acid and PDMS, the resulting films showed hydrophobic and even superhydrophobic characteristics due to their special surface energy and nano-microstructure morphology. Importantly, stable superhydrophobicity with a contact angle of 153.5° was successfully observed for CuO-ZnO microflowers after modification with PDMS. The electrochemical impedance measurements proved that the anticorrosion efficiency for the CuO/ZnO/PDMS sample was about 99%. PMID:28773056
Beshkar, Farshad; Khojasteh, Hossein; Salavati-Niasari, Masoud
2017-06-25
In this work we have demonstrated a facile formation of CuO nanostructures on copper substrates by the oxidation of copper foil in ethylene glycol (EG) at 80 °C. On immersing a prepared CuO film into a solution containing 0.1 g Zn(acac)₂ in 20 mL EG for 8 h, ZnO flower-like microstructures composed of hierarchical three-dimensional (3D) aggregated nanoparticles and spherical architectures were spontaneously formed at 100 °C. The as-synthesized thin films and 3D microstructures were characterized using XRD, SEM, and EDS techniques. The effects of sodium dodecyl sulphate (SDS), cetyltrimethylammonium bromide (CTAB), and polyethylene glycol (PEG) 6000 as surfactants and stabilizers on the morphology of the CuO and ZnO structures were discussed. Possible growth mechanisms for the controlled organization of primary building units into CuO nanostructures and 3D flower-like ZnO architectures were proposed. The hydrophobic property of the products was characterized by means of water contact angle measurement. After simple surface modification with stearic acid and PDMS, the resulting films showed hydrophobic and even superhydrophobic characteristics due to their special surface energy and nano-microstructure morphology. Importantly, stable superhydrophobicity with a contact angle of 153.5° was successfully observed for CuO-ZnO microflowers after modification with PDMS. The electrochemical impedance measurements proved that the anticorrosion efficiency for the CuO/ZnO/PDMS sample was about 99%.
NASA Astrophysics Data System (ADS)
Brauer, G.; Anwand, W.; Grambole, D.; Grenzer, J.; Skorupa, W.; Čížek, J.; Kuriplach, J.; Procházka, I.; Ling, C. C.; So, C. K.; Schulz, D.; Klimm, D.
2009-03-01
A systematic study of various, nominally undoped ZnO single crystals, either hydrothermally grown (HTG) or melt grown (MG), has been performed. The crystal quality has been assessed by x-ray diffraction, and a comprehensive estimation of the detailed impurity and hydrogen contents by inductively coupled plasma mass spectrometry and nuclear reaction analysis, respectively, has been made also. High precision positron lifetime experiments show that a single positron lifetime is observed in all crystals investigated, which clusters at 180-182 ps and 165-167 ps for HTG and MG crystals, respectively. Furthermore, hydrogen is detected in all crystals in a bound state with a high concentration (at least 0.3at.% ), whereas the concentrations of other impurities are very small. From ab initio calculations it is suggested that the existence of Zn-vacancy-hydrogen complexes is the most natural explanation for the given experimental facts at present. Furthermore, the distribution of H at a metal/ZnO interface of a MG crystal, and the H content of a HTG crystal upon annealing and time afterward has been monitored, as this is most probably related to the properties of electrical contacts made at ZnO and the instability in p -type conductivity observed at ZnO nanorods in literature. All experimental findings and presented theoretical considerations support the conclusion that various types of Zn-vacancy-hydrogen complexes exist in ZnO and need to be taken into account in future studies, especially for HTG materials.
Yoon, Seok Min; Lou, Sylvia J; Loser, Stephen; Smith, Jeremy; Chen, Lin X; Facchetti, Antonio; Marks, Tobin J; Marks, Tobin
2012-12-12
Zinc oxide is a promising candidate as an interfacial layer (IFL) in inverted organic photovoltaic (OPV) cells due to the n-type semiconducting properties as well as chemical and environmental stability. Such ZnO layers collect electrons at the transparent electrode, typically indium tin oxide (ITO). However, the significant resistivity of ZnO IFLs and an energetic mismatch between the ZnO and the ITO layers hinder optimum charge collection. Here we report that inserting nanoscopic copper hexadecafluorophthalocyanine (F(16)CuPc) layers, as thin films or nanowires, between the ITO anode and the ZnO IFL increases OPV performance by enhancing interfacial electron transport. In inverted P3HT:PC(61)BM cells, insertion of F(16)CuPc nanowires increases the short circuit current density (J(sc)) versus cells with only ZnO layers, yielding an enhanced power conversion efficiency (PCE) of ∼3.6% vs ∼3.0% for a control without the nanowire layer. Similar effects are observed for inverted PTB7:PC(71)BM cells where the PCE is increased from 8.1% to 8.6%. X-ray scattering, optical, and electrical measurements indicate that the performance enhancement is ascribable to both favorable alignment of the nanowire π-π stacking axes parallel to the photocurrent flow and to the increased interfacial layer-active layer contact area. These findings identify a promising strategy to enhance inverted OPV performance by inserting anisotropic nanostructures with π-π stacking aligned in the photocurrent flow direction.
Yu, Jiangdong; Jiang, Chunyan; Guan, Qingqing; Ning, Ping; Gu, Junjie; Chen, Qiuling; Zhang, Junmin; Miao, Rongrong
2018-03-01
Biochar derived from waste water hyacinth was prepared and modified by ZnO nanoparticles for Cr(VI) removal from aqueous solution with the aim of Cr(VI) removal and management of waste biomass. The effect of carbonization temperature (500-800 °C), ZnO content (10-50 wt%) loaded on biochar and contact time (0.17-14 h) on the Cr(VI) removal were investigated. It was found that higher than 95% removal efficiency of Cr(VI) can be achieved with the biochar loaded 30 wt% ZnO. The adsorption kinetics of the sorbent is consistent with the pseudo-second-order kinetic model and adsorption isotherm follows the Langmuir model with maximum adsorption capacity of 43.48 mg g -1 for Cr(VI). Multiple techniques such as XRD, XPS, SEM, EDX and FT-IR were performed to investigate the possible mechanisms involved in the Cr (VI) adsorption. The results show that there is precipitation between chromium ions and Zn oxide. Furthermore, the ZnO nanoparticles acts as photo-catalyst to generate photo-generated electrons to enhance the reduction of Cr(VI) to Cr(III). The as-prepared ZnO/BC possess good recyclability and the removal ratio remained at about 70% in the fifth cycle, which suggests that both contaminants removal and effective management of water hyacinth can be achieved by the approach. Copyright © 2017 Elsevier Ltd. All rights reserved.
Down-top nanofabrication of binary (CdO)x (ZnO)1-x nanoparticles and their antibacterial activity.
Al-Hada, Naif Mohammed; Mohamed Kamari, Halimah; Abdullah, Che Azurahanim Che; Saion, Elias; Shaari, Abdul H; Talib, Zainal Abidin; Matori, Khamirul Amin
2017-01-01
In the present study, binary oxide (cadmium oxide [CdO]) x (zinc oxide [ZnO]) 1-x nanoparticles (NPs) at different concentrations of precursor in calcination temperature were prepared using thermal treatment technique. Cadmium and zinc nitrates (source of cadmium and zinc) with polyvinylpyrrolidone (capping agent) have been used to prepare (CdO) x (ZnO) 1-x NPs samples. The sample was characterized by X-ray diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray (EDX), transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. XRD patterns analysis revealed that NPs were formed after calcination, which showed a cubic and hexagonal crystalline structure of (CdO) x (ZnO) 1-x NPs. The phase analysis using EDX spectroscopy and FTIR spectroscopy confirmed the presence of Cd and Zn as the original compounds of prepared (CdO) x (ZnO) 1-x NP samples. The average particle size of the samples increased from 14 to 33 nm as the concentration of precursor increased from x=0.20 to x=0.80, as observed by TEM results. The surface composition and valance state of the prepared product NPs were determined by X-ray photoelectron spectroscopy (XPS) analyses. Diffuse UV-visible reflectance spectra were used to determine the optical band gap through the Kubelka-Munk equation; the energy band gap was found to decrease for CdO from 2.92 to 2.82 eV and for ZnO from 3.22 to 3.11 eV with increasing x value. Additionally, photoluminescence (PL) spectra revealed that the intensity in PL increased with an increase in particle size. In addition, the antibacterial activity of binary oxide NP was carried out in vitro against Escherichia coli ATCC 25922 Gram (-ve), Salmonella choleraesuis ATCC 10708, and Bacillus subtilis UPMC 1175 Gram (+ve). This study indicated that the zone of inhibition of 21 mm has good antibacterial activity toward the Gram-positive B. subtilis UPMC 1175.
NASA Astrophysics Data System (ADS)
Singh, Satyendra Kumar; Hazra, Purnima
2018-05-01
This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.
In situ reduced graphene oxide interlayer for improving electrode performance in ZnO nanorods
NASA Astrophysics Data System (ADS)
Venkatesan, A.; Ramesha, C. K.; Kannan, E. S.
2016-06-01
The effect of reduced graphene oxide (RGO) thin film on the transport characteristics of vertically aligned zinc oxide nanorods (ZnO NRs) grown on ITO substrate was studied. GO was uniformly drop casted on ZnO NRs as a passivation layer and then converted into RGO by heating it at 60 °C prior to metal electrode deposition. This low temperature reduction is facilitated by the thermally excited electrons from ZnI interstitial sites (~30 meV). Successful reduction of GO was ascertained from the increased disorder band (D) intensity in the Raman spectra. Temperature (298 K-10 K) dependent transport measurements of RGO-ZnO NRs indicate that the RGO layer not only acts as a short circuiting inhibitor but also reduces the height of the potential barrier for electron tunneling. This is confirmed from the temperature dependent electrical characteristics which revealed a transition of carrier transport from thermionic emission at high temperature (T > 100 K) to tunneling at low temperature (T < 100 K) across the interface. Our technique is the most promising approach for making reliable electrical contacts on vertically aligned ZnO NRs and improving the reproducibility of device characteristics.
Bharathidasan, T; Mandalam, Aditya; Balasubramanian, M; Dhandapani, P; Sathiyanarayanan, S; Mayavan, Sundar
2015-08-26
We developed a single-step thermal method that enables successful inclusion of ZnO components in the porous boron-carbon-nitrogen (BCN) framework to form a new class of functional hybrid. ZnO-containing BCN hybrids were prepared by treating a mixture of B2O3, glycine, and zinc nitrate at 500 °C. Glycine-nitrate decomposition along with B2O3 acts as a source for ZnO-BCN formation. The incorporation of ZnO onto BCN has extended the photoresponse of ZnO in the visible region, which makes ZnO-BCN a preferable photocatalyst relative to ZnO upon sunlight exposure. It is interesting to note that as-prepared 2D ZnO-BCN sheets dispersed in PDMS form a stable coating over aluminum alloys. The surface exhibited a water contact angle (CA) of 157.6° with 66.6 wt % ZnO-BCN in polydimethylsiloxane (PDMS) and a water droplet (7 μL) roll-off angle of <6° and also demonstrates oil fouling resistant superhydrophobicity. In brief, the present study focuses on the gram scale synthesis of a new class of sunlight-driven photocatalyst and also its application toward the development of superhydrophobic and oleophobic coating.
Preparation of anticoagulant PyC biomaterials with super-hydrophobic surface.
Ze, Wang; Wen-Sheng, Tan; Ye-Xia; Ming, Zhang; Xiao-Ping, Li; Jian-Guo, Qiu; Xiao-Hong, Yang
2018-01-01
Pyrolytic carbon (PyC) is a kind of biomaterial which is chemically inert and has excellent biocompatibility. In order to obtain a super-hydrophobic PyC surface to improve anticoagulation and inhibit thrombus, this study prepares grating pair structure, microhole array structure, helix structure on PyC surface by nanoseconds laser etching. Rod-like ZnO film and ball-like ZnO film are prepared on the PyC surface by the hydrothermal method; polyvinyl pyrrolidone (PVP) nanofiber film and PVP/TiO 2 complex nanofiber film are prepared on the PyC surface by the electrospinning method; the PyC surface is silanized. Finally, surface microstructure and surface energy are characterized by scanning electron microscopy and contact angle meter (OCA20, German DataPhysics Co.). The periodical microstructures are formed respectively by nanoseconds laser etching. The surface roughness is increased by the hydrothermal and electrospinning method. Through infiltration experiment on rough and smooth PyC surfaces, rough PyC surface with microstructure is super-hydrophobic and has greater than 150° contact angle, which decreases blood flow resistance and inhibits thrombus.
NASA Astrophysics Data System (ADS)
Shin, Hyun-Su; Lee, Ju-Hyun; Kwak, Joon-Seop; Lee, Hyun Hwi; Kim, Han-Ki
2013-10-01
In this study, we reported on the plasma damage-free sputtering of epitaxial Ga-doped ZnO (GZO) films on the p-GaN layer for use as a transparent contact layer (TCL) for GaN-based light-emitting diodes (LEDs) using linear facing target sputtering (LFTS). Effective confinement of high-density plasma between faced GZO targets and the substrate position located outside of the plasma region led to the deposition of the epitaxial GZO TCL with a low sheet resistance of 25.7 Ω/s and a high transmittance of 84.6% on a p-GaN layer without severe plasma damage, which was found using the conventional dc sputtering process. The low turn-on voltage of the GaN-based LEDs with an LFTS-grown GZO TCL layer that was grown at a longer target-to-substrate distance (TSD) indicates that the plasma damage of the GaN-LED could be effectively reduced by adjusting the TSD during the LFTS process.
Electronic structure-sunlight driven water splitting activity correlation of (Zn1-yGay)(O1-zNz).
RajaAmbal, Sivaraman; Yadav, A K; Jha, S N; Bhattacharyya, D; Gopinath, Chinnnakonda S
2014-11-21
(Zn1-yGay)(O1-zNz) (y≤ 0.10; z≤ 0.15) solid solutions have been investigated for their electronic structure and visible light photocatalytic activity, and a correlation was found between them. (Zn1-yGay)(O1-zNz) with ZnO as the major component have been synthesized by a solution combustion method in 10 minutes using simple raw materials. The local structures of Zn K edge and Ga K edge, and changes in the chemical environment with the incorporation of Ga and N in ZnO were determined by EXAFS study. EXAFS and XRD results suggested the dissolution of GaN in the ZnO lattice. The homogeneity of the solid solution was demonstrated from HRTEM studies. Photoluminescence studies revealed the creation of a new band at the top of the ZnO valence band (VB), and thus the broadening of the VB of (Zn1-yGay)(O1-zNz) or a decrease in the band gap was attributed to the origin of visible light absorption. UV-Vis spectral studies showed light absorption up to 550 nm, which directly supports the VB broadening. Predominant oxygen vacancies and high photocorrosion observed for ZnO were fully suppressed for (Zn1-yGay)(O1-zNz), indicating the minimization of defects, and thus more sustainability under irradiation conditions. The bare solid solution exhibited reasonable and promising activity for solar hydrogen evolution and photoelectrochemical current generation at 0 V. The present work explained factors such as the preparation method, single phase structure with the stabilization of integral parts, homogeneity in the structure, compensation of oxygen vacancies, and suppression of the density of recombination centres that play a pivotal role in realizing solar energy harvesting.
NASA Astrophysics Data System (ADS)
Mailhot, B.; Rivaton, A.; Gardette, J.-L.; Moustaghfir, A.; Tomasella, E.; Jacquet, M.; Ma, X.-G.; Komvopoulos, K.
2006-05-01
The chemical reactions resulting from ultraviolet radiation produce discoloration and significant changes in the surface properties of polycarbonate (PC). To prevent photon absorption from irradiation and oxygen diffusion and to enhance the surface nanomechanical properties of PC, thin ceramic coatings of ZnO and Al2O3 (both single- and multi-layer) were deposited on bulk PC by radio-frequency magnetron sputtering. The samples were irradiated at wavelengths greater than 300 nm, representative of outdoor conditions. Despite the effectiveness of ZnO to protect PC from irradiation damage, photocatalytic oxidation at the PC/ZnO interface was the limiting factor. To overcome this deficiency, a thin Al2O3 coating was used both as intermediate and top layer because of its higher hardness and wear resistance than ZnO. Therefore, PC/Al2O3/ZnO, PC/ZnO/Al2O3, and PC/Al2O3/ZnO/Al2O3 layered media were fabricated and their photodegradation properties were examined by infrared and ultraviolet-visible spectroscopy. It was found that the photocatalytic activity at the PC/ZnO interface was reduced in the presence of the intermediate Al2O3 layer that limited the oxygen permeability. Nanomechanical experiments performed with a surface force apparatus revealed that the previous coating systems enhanced both the surface nanohardness and the elastic modulus and reduced the coefficient of friction in the order of ZnO, Al2O3, and Al2O3/ZnO/Al2O3. Although irradiation increased the nanohardness and the elastic modulus of PC, the irradiation effect on the surface mechanical properties of ceramic-coated PC was secondary.
NASA Astrophysics Data System (ADS)
Fujisawa, Hironori; Kuwamoto, Kei; Nakashima, Seiji; Shimizu, Masaru
2016-02-01
HfO2-based thin films are one of the key dielectric and ferroelectric materials in Si-CMOS LSIs as well as in oxide electronic nanodevices. In this study, we demonstrated the fabrication of a ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire (NW) capacitor structure solely by metalorganic chemical vapor deposition (MOCVD). 15-nm-thick dielectric (Hf,Zr)O2 and 40-nm-thick top ZnO electrode layers were uniformly grown by MOCVD on a ZnO NW template with average diameter, length, and aspect ratio of 110 nm, 10 µm, and ˜90, respectively. The diameter and aspect ratio of the resultant trilayerd NWs are 200-300 nm and above 30, respectively. The crystalline phase of HfO2 and stacked the structure are also discussed.
Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN
NASA Astrophysics Data System (ADS)
Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon
2014-11-01
Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.
NASA Astrophysics Data System (ADS)
Survilienė, S.; Češūnienė, A.; Jasulaitienė, V.; Jurevičiūtė, I.
2015-01-01
The paper reviews black chromium electrodeposited from a trivalent chromium bath containing ZnO as a second main component. The chemical compositions of the top layers of the black chromium coatings were studied by the X-ray photoelectron spectroscopy method. The surface of black chromium was found to be almost entirely covered with organic substances. To gain information on the state of each element in the deposit bulk, the layer-by-layer etching of the black chromium surface with argon gas was used. Analysis of XPS spectra has shown that the top layers of black chromium without zinc are composed of various Cr(III) components, organic substances and metallic Cr, whereas metallic Cr is almost absent in black chromium containing some amount of Zn(II) compounds. The ratios of metal/oxide phases were found to be 10/27 and 2/28 for black chromium without and with zinc, respectively. It has been determined that owing to the presence of ZnO in the Cr(III) bath, the percentage of metallic chromium is substantially reduced in black chromium which is quite important for good solar selective characteristics of the coating. The results confirm some of earlier observations and provide new information on the composition of the near-surface layers.
Fabrication of a Graphene/ZnO based p-n junction device and its ultraviolet photoresponse properties
NASA Astrophysics Data System (ADS)
Kwon, Young-Tae; Kang, Sung-Oong; Cheon, Ji-Ae; Song, Yoseb; Lee, Jong-Jin; Choa, Yong-Ho
2017-09-01
Graphene with a zero-bandgap energy is easily doped using a chemical dopant, and a shift upwards or downwards in the Fermi level is generated. Moreover, the integration of inorganic material into the doped graphene changes the physical and chemical properties of the material. For this purpose, we successfully fabricated a p-n junction device by depositing an n-typed ZnO layer on p-doped graphene and studied the ultraviolet (UV) photoresponse properties under a photocurrent (UV light on) and a dark current (UV light off). Two devices, lateral and vertical, were developed by alternating the thickness of the ZnO layer, and the photoresponse mechanisms were described on the basis of the contact potential difference.
ZnO Thin Film Electronics for More than Displays
NASA Astrophysics Data System (ADS)
Ramirez, Jose Israel
Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow discharging time constants. Finally, to circumvent fabrication challenges on predetermined complex shapes, like curved mirror optics, a technique to transfer electronics from a rigid substrate to a flexible substrate is used. This technique allows various thin films, regardless of their deposition temperature, to be transferred to flexible substrates. Finally, ultra-low power operation of ZnO TFT gas sensors was demonstrated. The ZnO ozone sensors were optimized to operate with excellent electrical stability in ambient conditions, without using elevated temperatures, while still providing good gas sensitivity. This was achieved by using a post-deposition anneal and by partially passivating the contact regions while leaving the semiconductor sensing area open to the ambient. A novel technique to reset the gas sensor using periodic pulsing of a UV light over the sensor results in less than 25 milliseconds recovery time. A pathway to achieve gas selectivity by using organic thin-film layers as filters deposited over the gas sensors tis demonstrated. The ZnO ozone sensor TFTs and the UV light operate at room temperature with an average power below 1 muW.
Piezoelectric Resonator with Two Layers
NASA Technical Reports Server (NTRS)
Stephanou, Philip J. (Inventor); Black, Justin P. (Inventor)
2013-01-01
A piezoelectric resonator device includes: a top electrode layer with a patterned structure, a top piezoelectric layer adjacent to the top layer, a middle metal layer adjacent to the top piezoelectric layer opposite the top layer, a bottom piezoelectric layer adjacent to the middle layer opposite the top piezoelectric layer, and a bottom electrode layer with a patterned structure and adjacent to the bottom piezoelectric layer opposite the middle layer. The top layer includes a first plurality of electrodes inter-digitated with a second plurality of electrodes. A first one of the electrodes in the top layer and a first one of the electrodes in the bottom layer are coupled to a first contact, and a second one of the electrodes in the top layer and a second one of the electrodes in the bottom layer are coupled to a second contact.
Monolithic laser diode array with one metalized sidewall
Freitas, Barry L.; Skidmore, Jay A.; Wooldridge, John P.; Emanuel, Mark A.; Payne, Stephen A.
2001-01-01
A monolithic, electrically-insulating substrate that contains a series of notched grooves is fabricated. The substrate is then metalized so that only the top surface and one wall adjacent to the notch are metalized. Within the grooves is located a laser bar, an electrically-conductive ribbon or contact bar and an elastomer which secures/registers the laser bar and ribbon (or contact bar) firmly along the wall of the groove that is adjacent to the notch. The invention includes several embodiments for providing electrical contact to the corresponding top surface of the adjacent wall. In one embodiment, after the bar is located in the proper position, the electrically conductive ribbon is bent so that it makes electrical contact with the adjoining metalized top side of the heatsink.
Performance analyses of Schottky diodes with Au/Pd contacts on n-ZnO thin films as UV detectors
NASA Astrophysics Data System (ADS)
Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar
2017-12-01
In this paper, we report fabrication and performance analyses of UV detectors based on ZnO thin film Schottky diodes with Au and Pd contacts. RF magnetron sputtering technique has been used to deposit the nano-crystalline ZnO thin film, at room temperature. Characterization techniques such as XRD, AFM and SEM provided valuable information related to the micro-structural & optical properties of the thin film. The results show that the prepared thin film has good crystalline orientation and minimal surface roughness, with an optical bandgap of 3.1 eV. I-V and C-V characteristics were evaluated that indicate non-linear behaviour of the diodes with rectification ratios (IF/IR) of 19 and 427, at ± 4 V, for Au/ZnO and Pd/ZnO Schottky diodes, respectively. The fabricated Schottky diodes when exposed to a UV light of 365 nm wavelength, at an applied bias of -2 V, exhibited responsivity of 10.16 and 22.7 A/W, for Au and Pd Schottky contacts, respectively. The Pd based Schottky photo-detectors were found to exhibit better performance with superior values of detectivity and photoconductive gain of 1.95 × 1010 cm Hz0.5/W & 77.18, over those obtained for the Au based detectors which were observed to be 1.23 × 1010 cm Hz0.5/W & 34.5, respectively.
Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy
NASA Astrophysics Data System (ADS)
Asghar, M.; Mahmood, K.; Malik, Faisal; Hasan, M. A.
2013-06-01
In this paper, we have discussed the growth of ZnO by molecular beam epitaxy (MBE) and interface properties of Au Schottky contacts on grown sample. After the verification of structure and surface properties by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM), respectively, Au metal contact was fabricated by e-beam evaporation to study contact properties. The high value of ideality factor (2.15) and barrier height (0.61 eV) at room temperature obtained by current-voltage (I-V) characteristics suggested the presence of interface states between metal and semiconductor. To confirm this observation we carried out frequency dependent capacitance-voltage (C-V) and conductance-voltage (G-V) demonstrated that the capacitance of diode decreased with increasing frequency. The reason of this behavior is related with density of interface states, series resistance and image force lowering. The C-2-V plot drawn to calculate the carrier concentration and barrier height with values 1.4×1016 cm-3 and 0.92 eV respectively. Again, high value of barrier height obtained from C-V as compared to the value obtained from I-V measurements revealed the presence of interface states. The density of these interface states (Dit) was calculated by well known Hill-Coleman method. The calculated value of Dit at 1 MHz frequency was 2×1012 eV-1 cm-2. The plot between interface states and frequency was also drawn which demonstrated that density of interface states had inverse proportion with measuring frequency.
Nanoscale observation of organic thin film by atomic force microscopy
NASA Astrophysics Data System (ADS)
Mochizuki, Shota; Uruma, Takeshi; Satoh, Nobuo; Saravanan, Shanmugam; Soga, Tetsuo
2017-08-01
Organic photovoltaics (OPVs) fabricated using organic semiconductors and hybrid solar cells (HSCs) based on organic semiconductors/quantum dots (QDs) have been attracting significant attention owing to their potential use in low-cost solar energy-harvesting applications and flexible, light-weight, colorful, large-area devices. In this study, we observed and evaluated the surface of a photoelectric conversion layer (active layer) of the OPVs and HSCs based on phenyl-C61-butyric acid methyl ester (PCBM), poly(3-hexylthiophene) (P3HT), and zinc oxide (ZnO) nanoparticles. The experiment was performed using atomic force microscopy (AFM) combined with a frequency modulation detector (FM detector) and a contact potential difference (CPD) detection circuit. We experimentally confirmed the changes in film thickness and surface potential, as affected by the ZnO nanoparticle concentration. From the experimental results, we confirmed that ZnO nanoparticles possibly affect the structures of PCBM and P3HT. Also, we prepared an energy band diagram on the basis of the observation results, and analyzed the energy distribution inside the active layer.
Electrical properties of lightly Ga-doped ZnO nanowires
NASA Astrophysics Data System (ADS)
Alagha, S.; Heedt, S.; Vakulov, D.; Mohammadbeigi, F.; Senthil Kumar, E.; Schäpers, Th; Isheim, D.; Watkins, S. P.; Kavanagh, K. L.
2017-12-01
We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration ({10}18 {{cm}}-3). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration.
Mallakpour, Shadpour; Darvishzadeh, Marzieh
2018-03-01
In this project, physicochemical properties of poly(vinyl chloride) (PVC) reinforced by ZnO nanoparticles (NPs) were studied. Firstly, ZnO NPs were modified with bovine serum albumin (BSA) as an organo-modifier and biocompatible substance through ultrasound irradiation as environmental friendly, low cost and rapid means. Nanocomposite (NC) films were prepared by loadings of various ratios of ZnO/BSA NPs (3, 6 and 9wt%) inside the PVC. Structural morphology and physical properties of the ZnO-BSA NPs and NC films were investigated via Fourier transform infrared spectroscopy, X-ray diffraction, thermogravimetric analysis (TGA), transmission electron microscopy and field emission scanning electron microscopy. According to the obtained information from the TGA, an increase in the thermal stability can be clearly observed. Also the results of contact angle analysis indicated with increasing percent of ZnO/BSA NPs into PVC the hydrophilic behaviors of NCs were increased. Copyright © 2017 Elsevier B.V. All rights reserved.
Jin, Xin; Deng, Mao; Kaps, Sören; Zhu, Xinwei; Hölken, Iris; Mess, Kristin; Adelung, Rainer; Mishra, Yogendra Kumar
2014-01-01
ZnO particles of different size and structures were used as fillers to modify the silicone rubber, in order to reveal the effect of the filler shape in the polymer composites. Tetrapodal shaped microparticles, short microfibers/whiskers, and nanosized spherical particles from ZnO have been used as fillers to fabricate the different ZnO-Silicone composites. The detailed microstructures of the fillers as well as synthesized composites using scanning electron microscopy have been presented here. The tensile elastic modulus and water contact angle, which are important parameters for bio-mimetic applications, of fabricated composites with different fillers have been measured and compared. Among all three types of fillers, tetrapodal shaped ZnO microparticles showed the best performance in terms of increase in hydrophobicity of material cross-section as well as the stiffness of the composites. It has been demonstrated that the tetrapodal shaped microparticles gain their advantage due to the special shape, which avoids agglomeration problems as in the case for nanoparticles, and the difficulty of achieving truly random distribution for whisker fillers. PMID:25208080
Jin, Xin; Deng, Mao; Kaps, Sören; Zhu, Xinwei; Hölken, Iris; Mess, Kristin; Adelung, Rainer; Mishra, Yogendra Kumar
2014-01-01
ZnO particles of different size and structures were used as fillers to modify the silicone rubber, in order to reveal the effect of the filler shape in the polymer composites. Tetrapodal shaped microparticles, short microfibers/whiskers, and nanosized spherical particles from ZnO have been used as fillers to fabricate the different ZnO-Silicone composites. The detailed microstructures of the fillers as well as synthesized composites using scanning electron microscopy have been presented here. The tensile elastic modulus and water contact angle, which are important parameters for bio-mimetic applications, of fabricated composites with different fillers have been measured and compared. Among all three types of fillers, tetrapodal shaped ZnO microparticles showed the best performance in terms of increase in hydrophobicity of material cross-section as well as the stiffness of the composites. It has been demonstrated that the tetrapodal shaped microparticles gain their advantage due to the special shape, which avoids agglomeration problems as in the case for nanoparticles, and the difficulty of achieving truly random distribution for whisker fillers.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chu, Rongming; Cao, Yu; Li, Zijian
2018-02-20
A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.
All-inkjet-printed flexible ZnO micro photodetector for a wearable UV monitoring device.
Tran, Van-Thai; Wei, Yuefan; Yang, Hongyi; Zhan, Zhaoyao; Du, Hejun
2017-03-03
Fabrication of small-sized patterns of inorganic semiconductor onto flexible substrates is a major concern when manufacturing wearable devices for measuring either biometric or environmental parameters. In this study, micro-sized flexible ZnO UV photodetectors have been thoroughly prepared by a facile inkjet printing technology and followed with heat treatments. A simple ink recipe of zinc acetate precursor solution was investigated. It is found that the substrate temperature during zinc precursor ink depositing has significant effects on ZnO pattern shape, film morphology, and crystallization. The device fabricated from the additive manufacturing approach has good bendability, Ohmic contact, short response time as low as 0.3 s, and high on/off ratio of 3525. We observed the sensor's dependence of response/decay time by the illuminating UV light intensity. The whole process is based on additive manufacturing which has many benefits such as rapid prototyping, saving material, being environmentally friendly, and being capable of creating high-resolution patterns. In addition, this method can be applied to flexible substrates, which makes the device more applicable for applications requiring flexibility such as wearable devices. The proposed all-inkjet-printing approach for a micro-sized ZnO UV photodetector would significantly simplify the fabrication process of micro-sized inorganic semiconductor-based devices. A potential application is real-time monitoring of UV light exposure to warn users about unsafe direct sunlight to implement suitable avoidance solutions.
Mutant p53 perturbs DNA replication checkpoint control through TopBP1 and Treslin.
Liu, Kang; Lin, Fang-Tsyr; Graves, Joshua D; Lee, Yu-Ju; Lin, Weei-Chin
2017-05-09
Accumulating evidence supports the gain-of-function of mutant forms of p53 (mutp53s). However, whether mutp53 directly perturbs the DNA replication checkpoint remains unclear. Previously, we have demonstrated that TopBP1 forms a complex with mutp53s and mediates their gain-of-function through NF-Y and p63/p73. Akt phosphorylates TopBP1 and induces its oligomerization, which inhibits its ATR-activating function. Here we show that various contact and conformational mutp53s bypass Akt to induce TopBP1 oligomerization and attenuate ATR checkpoint response during replication stress. The effect on ATR response caused by mutp53 can be exploited in a synthetic lethality strategy, as depletion of another ATR activator, DNA2, in mutp53-R273H-expressing cancer cells renders cells hypersensitive to cisplatin. Expression of mutp53-R273H also makes cancer cells more sensitive to DNA2 depletion or DNA2 inhibitors. In addition to ATR-activating function during replication stress, TopBP1 interacts with Treslin in a Cdk-dependent manner to initiate DNA replication during normal growth. We find that mutp53 also interferes with TopBP1 replication function. Several contact, but not conformational, mutp53s enhance the interaction between TopBP1 and Treslin and promote DNA replication despite the presence of a Cdk2 inhibitor. Together, these data uncover two distinct mechanisms by which mutp53 enhances DNA replication: ( i ) Both contact and conformational mutp53s can bind TopBP1 and attenuate the checkpoint response to replication stress, and ( ii ) during normal growth, contact (but not conformational) mutp53s can override the Cdk2 requirement to promote replication by facilitating the TopBP1/Treslin interaction.
Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins
NASA Astrophysics Data System (ADS)
Kim, Se Jin
Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in which Ta2O5 and ZnO coexist were also employed to study adsorption behaviors. Especially, Ta2O 5-based bilayer films revealed zero adsorption of lysozyme.
75 FR 30007 - Race to the Top Fund Assessment Program
Federal Register 2010, 2011, 2012, 2013, 2014
2010-05-28
... DEPARTMENT OF EDUCATION Overview Information Race to the Top Fund Assessment Program Catalog of... Assessment Program. This notice makes two corrections to the April 9 NIA. FOR FURTHER INFORMATION CONTACT..., audiotape, or computer diskette) on request to the contact listed in this section. SUPPLEMENTARY INFORMATION...
NASA Astrophysics Data System (ADS)
Kumar, S.; Panigrahi, D.; Dhar, A.
2018-03-01
Interfacial issues can significantly restrict the performance of photovoltaic devices by exacerbating the charge recombination channels, macroscopic phase separation, and providing a non-ideal contact for selective extraction of charges particularly in photovoltaic devices using organic and inorganic materials together. Organic interfacial modifiers (IMs) are often used to mitigate these issues by modifying the organic-inorganic interface. In order to extricate the role of these IMs on the photovoltaic performance we have made a comprehensive study on the application of perylene-based and fullerene small molecules having different molecular origin as organic IMs on ZnO electron extracting layers in inverted BHJs photovoltaic devices. We report an elaborate study on the electronic and surface altering properties of these IMs and correlated their effect on the different PV performance parameters of the inverted BHJ solar cells employing P3HT: PCBM photoactive layer. Our investigations demonstrate the role of these organic IMs in reducing the ZnO cathode work function and increasing its electron transportation property along with the passivation of superficial traps states present on ZnO which helps in selective extraction of charge carriers from the devices and minimize the recombination losses. These different aspects of IMs compete and their balanced effect decides the final outcome. As a result, we obtain a substantial improvement in the device performance with power conversion efficiency (PCE) of 3.0% for the C70/ZnO cathode device which shows over 60% improvement in contrast to the devices without any ZnO surface modification. The present investigation intents to exhibit the feasibility of vacuum sublimated organic small molecules in performance improvement in BHJ solar cells utilizing the ZnO ETLs and contrast their efficacy for the purpose rather than setting any benchmark device performance although the efficiencies obtained are typical for the active layer used in the study.
NASA Astrophysics Data System (ADS)
Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.
2012-09-01
We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.
Reduced Cu(InGa)Se 2 Thickness in Solar Cells Using a Superstrate Configuration
DOE Office of Scientific and Technical Information (OSTI.GOV)
Shafarman, William N.
This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se 2 manufacturing by reducing the thickness of the Cu(InGa)Se 2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se 2 thicknesses less than 1 µm. The primary objective wasmore » to demonstrate a Cu(InGa)Se 2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se 2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se 2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of the absorber layer. The primary junction is then formed after Cu(InGa)Se 2 deposition. This allows the potential benefits of superstrate cells for optical enhancement while maintaining processing advantages of the substrate configuration and avoiding the harmful effects of high temperature deposition on p-n junction formation. Backwall devices have outperformed substrate cells at absorber thicknesses of 0.1-0.5 µm through enhanced JSC due to easy incorporation of a Ag reflector and, with light incident on the absorber, the elimination of parasitic absorption in the CdS buffer. An efficiency of 9.7% has been achieved for a backwall Cu(InGa)Se 2 device with absorber thickness ~0.4 μm. A critical achievement that enabled implementation of the backwall cell was the development of a transparent back contact using MoO 3 or WO 3. Processes for controlled deposition of each material by reactive rf sputtering from metal targets were developed. These contacts have wide bandgaps making them well-suited for application as contacts for backwall devices as well as potential use in bifacial cells and as the top cell of tandem CuInSe 2-based devices. Optical enhancement will be critical for further improvements. Wet chemical texturing of ZnO films has been developed for a simple, low cost light-trapping scheme for backwall superstrate devices to enhance long wavelength quantum efficiency. An aqueous oxalic acid etch was developed and found to strongly texture sputtered ZnO with high haze ≈ 0.9 observed across the whole spectrum. And finally, advanced optical models have been developed to assist the characterization and optimization of Cu(InGa)Se 2 cells with thin absorbers« less
High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.
Horng, Ray-Hua; Shen, Kun-Ching; Yin, Chen-Yang; Huang, Chiung-Yi; Wuu, Dong-Sing
2013-06-17
High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.
NASA Astrophysics Data System (ADS)
Chakradhar, R. P. S.; Kumar, V. Dinesh; Rao, J. L.; Basu, Bharathibai J.
2011-08-01
Superhydrophobic surfaces based on ZnO-PDMS nanocomposite coatings are demonstrated by a simple, facile, time-saving, wet chemical route. ZnO nanopowders with average particle size of 14 nm were synthesized by a low temperature solution combustion method. Powder X-ray diffraction results confirm that the nanopowders exhibit hexagonal wurtzite structure and belong to space group P63 mc. Field emission scanning electron micrographs reveal that the nanoparticles are connected to each other to make large network systems consisting of hierarchical structure. The as formed ZnO coating exhibits wetting behaviour with Water Contact Angle (WCA) of ˜108°, however on modification with polydimethylsiloxane (PDMS), it transforms to superhydrophobic surface with measured contact and sliding angles for water at 155° and less than 5° respectively. The surface properties such as surface free energy ( γp), interfacial free energy ( γpw), and the adhesive work ( Wpw) were evaluated. Electron paramagnetic resonance (EPR) studies on superhydrophobic coatings revealed that the surface defects play a major role on the wetting behaviour. Advantages of the present method include the cheap and fluorine-free raw materials, environmentally benign solvents, and feasibility for applying on large area of different substrates.
Down-top nanofabrication of binary (CdO)x (ZnO)1–x nanoparticles and their antibacterial activity
Al-Hada, Naif Mohammed; Mohamed Kamari, Halimah; Abdullah, Che Azurahanim Che; Saion, Elias; Shaari, Abdul H; Talib, Zainal Abidin; Matori, Khamirul Amin
2017-01-01
In the present study, binary oxide (cadmium oxide [CdO])x (zinc oxide [ZnO])1–x nanoparticles (NPs) at different concentrations of precursor in calcination temperature were prepared using thermal treatment technique. Cadmium and zinc nitrates (source of cadmium and zinc) with polyvinylpyrrolidone (capping agent) have been used to prepare (CdO)x (ZnO)1–x NPs samples. The sample was characterized by X-ray diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray (EDX), transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. XRD patterns analysis revealed that NPs were formed after calcination, which showed a cubic and hexagonal crystalline structure of (CdO)x (ZnO)1–x NPs. The phase analysis using EDX spectroscopy and FTIR spectroscopy confirmed the presence of Cd and Zn as the original compounds of prepared (CdO)x (ZnO)1–x NP samples. The average particle size of the samples increased from 14 to 33 nm as the concentration of precursor increased from x=0.20 to x=0.80, as observed by TEM results. The surface composition and valance state of the prepared product NPs were determined by X-ray photoelectron spectroscopy (XPS) analyses. Diffuse UV–visible reflectance spectra were used to determine the optical band gap through the Kubelka–Munk equation; the energy band gap was found to decrease for CdO from 2.92 to 2.82 eV and for ZnO from 3.22 to 3.11 eV with increasing x value. Additionally, photoluminescence (PL) spectra revealed that the intensity in PL increased with an increase in particle size. In addition, the antibacterial activity of binary oxide NP was carried out in vitro against Escherichia coli ATCC 25922 Gram (−ve), Salmonella choleraesuis ATCC 10708, and Bacillus subtilis UPMC 1175 Gram (+ve). This study indicated that the zone of inhibition of 21 mm has good antibacterial activity toward the Gram-positive B. subtilis UPMC 1175. PMID:29200844
Chao, Chung-Hua; Wei, Da-Hua
2015-01-01
In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application. PMID:26484561
2006-01-01
Journal Article POSTPRINT 3. DATES COVERED (From - To) 2006 4. TITLE AND SUBTITLE X-ray irradiation effects in top contact, pentacene based field 5a...Preliminary studies of the effect of x-ray irradiation, typically used to simulate radiation effects in space, on top contract, pentacene based field effect...irradiation, radiation, radiation effects, pentacene 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT 18. NUMBER OF PAGES 19a. NAME OF
Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure.
Chen, Libo; Xue, Fei; Li, Xiaohui; Huang, Xin; Wang, Longfei; Kou, Jinzong; Wang, Zhong Lin
2016-01-26
Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2-1.9 eV, monolayer or a-few-layer MoS2 is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the source-drain transport property in MoS2. At a 6.25 MPa applied stimulus on a packaged device, the source-drain current can be tuned for ∼25%, equivalent to the results of applying an extra -5 V back gate voltage. Another type of PGFET with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.
NASA Astrophysics Data System (ADS)
Lim, Wantae
2009-12-01
This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance. Plasma etching process of ZnO was carried out using a variety of plasma chemistries: CH4/H2-, C2H6/H 2-, Cl2-, IBr-, ICl-, BI3- and BBr3/Ar. High fidelity pattern transfer can be achieved with practical etch rate and very smooth surface in methane-based chemistries, although the sidewall is not completely vertical. Threshold energy as low as 60 +/- 20 eV for all plasma chemistries was achieved, confirming that etching is driven by ion-assisted mechanism over the whole range of ion energy. Ohmic contacts to p-CuCrO2 are examined using borides (CrB2 and W2B5), nitrides (TaN and ZrN) and a high temperature metal (Ir). These materials are used as a diffusion barrier in Ni/Au based contacts, i.e., Ni/Au/X/Ti/Au metallization scheme, where X is the refractory material. A minimum specific contact resistance of ˜ 5x10 -4 O.cm2 was achieved for the Ir-containing contacts after annealing at temperature of 500--800°C for 60s in O2 ambient. The presence of Ir diffusion barrier increase the thermal stability of the contacts by ˜ 200 °C compared to conventional Ni/Au contacts. By sharp contrast, the use of other refractory materials led to the poorer thermal stability, with the contact resistance increasing sharply above 400°C.
NASA Astrophysics Data System (ADS)
Huda, Nazmul; Naser, Jamal; Brooks, Geoffrey; Reuter, Markus A.; Matusewicz, Robert W.
2012-02-01
Slag fuming is a reductive treatment process for molten zinciferous slags for extracting zinc in the form of metal vapor by injecting or adding a reductant source such as pulverized coal or lump coal and natural gas. A computational fluid dynamic (CFD) model was developed to study the zinc slag fuming process from imperial smelting furnace (ISF) slag in a top-submerged lance furnace and to investigate the details of fluid flow, reaction kinetics, and heat transfer in the furnace. The model integrates combustion phenomena and chemical reactions with the heat, mass, and momentum interfacial interaction between the phases present in the system. A commercial CFD package AVL Fire 2009.2 (AVL, Graz, Austria) coupled with a number of user-defined subroutines in FORTRAN programming language were used to develop the model. The model is based on three-dimensional (3-D) Eulerian multiphase flow approach, and it predicts the velocity and temperature field of the molten slag bath, generated turbulence, and vortex and plume shape at the lance tip. The model also predicts the mass fractions of slag and gaseous components inside the furnace. The model predicted that the percent of ZnO in the slag bath decreases linearly with time and is consistent broadly with the experimental data. The zinc fuming rate from the slag bath predicted by the model was validated through macrostep validation process against the experimental study of Waladan et al. The model results predicted that the rate of ZnO reduction is controlled by the mass transfer of ZnO from the bulk slag to slag-gas interface and rate of gas-carbon reaction for the specified simulation time studied. Although the model is based on zinc slag fuming, the basic approach could be expanded or applied for the CFD analysis of analogous systems.
Fredj, Donia; Pourcin, Florent; Alkarsifi, Riva; Kilinc, Volkan; Liu, Xianjie; Ben Dkhil, Sadok; Boudjada, Nassira Chniba; Fahlman, Mats; Videlot-Ackermann, Christine; Margeat, Olivier; Ackermann, Jörg; Boujelbene, Mohamed
2018-05-23
Organic-inorganic hybrid materials composed of bismuth and diaminopyridine are studied as novel materials for electron extraction layers in polymer solar cells using regular device structures. The hybrid materials are solution processed on top of two different low band gap polymers (PTB7 or PTB7-Th) as donor materials mixed with fullerene PC 70 BM as the acceptor. The intercalation of the hybrid layer between the photoactive layer and the aluminum cathode leads to solar cells with a power conversion efficiency of 7.8% because of significant improvements in all photovoltaic parameters, that is, short-circuit current density, fill factor, and open-circuit voltage, similar to the reference devices using ZnO as the interfacial layer. However when using thick layers of such hybrid materials for electron extraction, only small losses in photocurrent density are observed in contrast to the reference material ZnO of pronounced losses because of optical spacer effects. Importantly, these hybrid electron extraction layers also strongly improve the device stability in air compared with solar cells processed with ZnO interlayers. Both results underline the high potential of this new class of hybrid materials as electron extraction materials toward robust processing of air stable organic solar cells.
Jirayupat, Chaiyanut; Wongwiriyapan, Winadda; Kasamechonchung, Panita; Wutikhun, Tuksadon; Tantisantisom, Kittipong; Rayanasukha, Yossawat; Jiemsakul, Thanakorn; Tansarawiput, Chookiat; Liangruksa, Monrudee; Khanchaitit, Paisan; Horprathum, Mati; Porntheeraphat, Supanit; Klamchuen, Annop
2018-02-21
Here, we demonstrate a novel device structure design to enhance the electrical conversion output of a triboelectric device through the piezoelectric effect called as the piezo-induced triboelectric (PIT) device. By utilizing the piezopotential of ZnO nanowires embedded into the polydimethylsiloxane (PDMS) layer attached on the top electrode of the conventional triboelectric device (Au/PDMS-Al), the PIT device exhibits an output power density of 50 μW/cm 2 , which is larger than that of the conventional triboelectric device by up to 100 folds under the external applied force of 8.5 N. We found that the effect of the external piezopotential on the top Au electrode of the triboelectric device not only enhances the electron transfer from the Al electrode to PDMS but also boosts the internal built-in potential of the triboelectric device through an external electric field of the piezoelectric layer. Furthermore, 100 light-emitting diodes (LEDs) could be lighted up via the PIT device, whereas the conventional device could illuminate less than 20 LED bulbs. Thus, our results highlight that the enhancement of the triboelectric output can be achieved by using a PIT device structure, which enables us to develop hybrid nanogenerators for various self-power electronics such as wearable and mobile devices.
Dhiman, Nitesh; Markandeya; Singh, Amrita; Verma, Neeraj K; Ajaria, Nidhi; Patnaik, Satyakam
2017-05-01
ZnO NPs were synthesized by a prudent green chemistry approach in presence of polyacrylamide grafted guar gum polymer (pAAm-g-GG) to ensure uniform morphology, and functionality and appraised for their ability to degrade photocatalytically Acridine Orange (AO) dye. These ZnO@pAAm-g-GG NPs were thoroughly characterized by various spectroscopic, XRD and electron microscopic techniques. The relative quantity of ZnO NPs in polymeric matrix has been estimated by spectro-analytical procedure; AAS and TGA analysis. The impact of process parameters viz. NP's dose, contact time and AO dye concentration on percentage photocatalytic degradation of AO dyes were evaluated using multivariate optimizing tools, Response Surface Methodology (RSM) involving Box-Behnken Design (BBD) and Artificial Neural Network (ANN). Congruity of the BBD statistical model was implied by R 2 value 0.9786 and F-value 35.48. At RSM predicted optimal condition viz. ZnO@pAAm-g-GG NP's dose of 0.2g/L, contact time of 210min and AO dye concentration 10mg/L, a maximum of 98% dye degradation was obtained. ANOVA indicated appropriateness of the model for dye degradation owing to "Prob.>F" less than 0.05 for variable parameters. We further, employed three layers feed forward ANN model for validating the BBD process parameters and suitability of our chosen model. The evaluation of Levenberg-Marquardt algorithm (ANN1) and Gradient Descent with adaptive learning rate (ANN2) model employed to scrutinize the best method and found experimental values of AO dye degradation were in close to those with predicated value of ANN 2 modeling with minimum error. Copyright © 2017 Elsevier Inc. All rights reserved.
Hambali, Nur Ashikyn; Yahaya, Hafizal; Mahmood, Mohamad Rusop; Terasako, Tomoaki; Hashim, Abdul Manaf
2014-01-01
The electrochemical growth of zinc oxide (ZnO) nanostructures on graphene on glass using zinc nitrate hexahydrate was studied. The effects of current densities and temperatures on the morphological, structural, and optical properties of the ZnO structures were studied. Vertically aligned nanorods were obtained at a low temperature of 75°C, and the diameters increased with current density. Growth temperature seems to have a strong effect in generating well-defined hexagonal-shape nanorods with a smooth top edge surface. A film-like structure was observed for high current densities above -1.0 mA/cm(2) and temperatures above 80°C due to the coalescence between the neighboring nanorods with large diameter. The nanorods grown at a temperature of 75°C with a low current density of -0.1 mA/cm(2) exhibited the highest density of 1.45 × 10(9) cm(-2). X-ray diffraction measurements revealed that the grown ZnO crystallites were highly oriented along the c-axis. The intensity ratio of the ultraviolet (UV) region emission to the visible region emission, I UV/I VIS, showed a decrement with the current densities for all grown samples. The samples grown at the current density below -0.5 mA/cm(2) showed high I UV/I VIS values closer to or higher than 1.0, suggesting their fewer structural defects. For all the ZnO/graphene structures, the high transmittance up to 65% was obtained at the light wavelength of 550 nm. Structural and optical properties of the grown ZnO structures seem to be effectively controlled by the current density rather than the growth temperature. ZnO nanorod/graphene hybrid structure on glass is expected to be a promising structure for solar cell which is a conceivable candidate to address the global need for an inexpensive alternative energy source.
Pin fin compliant heat sink with enhanced flexibility
Schultz, Mark D.
2018-04-10
Heat sinks and methods of using the same include a top and bottom plate, at least one of which has a plurality of pin contacts flexibly connected to one another, where the plurality of pin contacts have vertical and lateral flexibility with respect to one another; and pin slice layers, each having multiple pin slices, arranged vertically between the top and bottom plates such that the plurality of pin slices form substantially vertical pins connecting the top and bottom plates.
Li, Zhiqi; Liu, Chunyu; Zhang, Xinyuan; Li, Shujun; Zhang, Xulin; Guo, Jiaxin; Guo, Wenbin; Zhang, Liu; Ruan, Shengping
2017-09-20
Recent advances in the interfacial modification of inverted-type polymer solar cells (PSCs) have resulted from controlling the surface energy of the cathode-modified layer (TiO 2 or ZnO) to enhance the short-circuit current (J sc ) or optimizing the contact morphology of the cathode (indium tin oxide or fluorine-doped tin oxide) and active layer to increase the fill factor. Herein, we report that the performance enhancement of PSCs is achieved by incorporating a donor macromolecule copper phthalocyanine (CuPc) as an anode modification layer. Using the approach based on orienting the microstructure evolution, uniformly dispersed island-shaped CuPc spot accumulations are built on the top of PTB7:PC 71 BM blend film, leading to an efficient spectral absorption and photogenerated exciton splitting. The best power conversion efficiency of PSCs is increased up to 9.726%. In addition to the enhanced light absorption, the tailored anode energy level alignment and optimized boundary morphology by incorporating the CuPc interlayer boost charge extraction efficiency and suppress the interfacial molecular recombination. These results demonstrate that surface morphology induction through molecular deposition is an effective method to improve the performance of PSCs, which reveals the potential implications of the interlayer between the organic active layer and the electrode buffer layer.
Rohwer, Egmont; Richter, Christoph; Heming, Nadine; Strauch, Kerstin; Litwinski, Christian; Nyokong, Tebello; Schlettwein, Derck; Schwoerer, Heinrich
2013-01-14
We investigate the ultrafast dynamics of the photoinduced electron transfer between surface-adsorbed indoline D149 dye and porous ZnO as used in the working electrodes of dye-sensitized solar cells. Transient absorption spectroscopy was conducted on the dye in solution, on solid state samples and for the latter in contact to a I(-)/I(3)(-) redox electrolyte typical for dye-sensitized solar cells to elucidate the effect of each component in the observed dynamics. D149 in a solution of 1:1 acetonitrile and tert-butyl alcohol shows excited-state lifetimes of 300±50 ps. This signature is severely quenched when D149 is adsorbed to ZnO, with the fastest component of the decay trace measured at 150±20 fs due to the charge-transfer mechanism. Absorption bands of the oxidized dye molecule were investigated to determine regeneration times which are in excess of 1 ns. The addition of the redox electrolyte to the system results in faster regeneration times, of the order of 1 ns. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion
NASA Astrophysics Data System (ADS)
Kocyigit, Adem; Orak, İkram; Turut, Abdulmecit
2018-03-01
Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (ɛ‧), dielectric loss (ɛ″), loss tangent (tan δ), the real and imaginary parts of electric modulus (M ‧ and M ″) and ac electrical conductivity (σ) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. The results have revealed that interfacial polarization and charge carriers are the important parameters to affect the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures for diode applications.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Çalışkan, Deniz, E-mail: dcaliskan@fen.bilkent.edu.tr; Department of Nanotechnology and Nanomedicine, Hacettepe University, 06800 Beytepe, Ankara; Bütün, Bayram
2014-10-20
ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO{sub 2} on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100 V bias, corresponding to 100 pA/cm{sup 2} current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100 V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio andmore » dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.
Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less
Zhang, Bin; Chen, Xudong; Ma, Shaohua; Chen, Yujie; Yang, Jin; Zhang, Mingqiu
2010-02-10
A modified ZnO quantum dot/polythiophene (ZnO/PTh) inorganic-organic hybrid architecture was fabricated by using ordered mesoporous silica (SBA-15) as the retaining template. First, a two-step strategy was developed to synthesize an ordered organic conducting polymer composite (PTh/SBA-15). Then, ZnO quantum dots were in situ formed on the pore walls of the ordered PTh/SBA-15 composite. Photoresponse of the inorganic-organic hybrid was studied with respect to its incident photon to collected electron conversion efficiency (IPCE) and morphology. The presence of SBA-15 proved to be critical for controlling the interfacial morphology and hence enlarging the interfacial area of the inorganic-organic heterojunction. The proposed approach may act as a key method to open up potential applications in photovoltaic devices.
Song, Jinhui; Zhou, Jun; Wang, Zhong Lin
2006-08-01
This paper presents the experimental observation of piezoelectric generation from a single ZnO wire/belt for illustrating a fundamental process of converting mechanical energy into electricity at nanoscale. By deflecting a wire/belt using a conductive atomic force microscope tip in contact mode, the energy is first created by the deflection force and stored by piezoelectric potential, and later converts into piezoelectric energy. The mechanism of the generator is a result of coupled semiconducting and piezoelectric properties of ZnO. A piezoelectric effect is required to create electric potential of ionic charges from elastic deformation; semiconducting property is necessary to separate and maintain the charges and then release the potential via the rectifying behavior of the Schottky barrier at the metal-ZnO interface, which serves as a switch in the entire process. The good conductivity of ZnO is rather unique because it makes the current flow possible. This paper demonstrates a principle for harvesting energy from the environment. The technology has the potential of converting mechanical movement energy (such as body movement, muscle stretching, blood pressure), vibration energy (such as acoustic/ultrasonic wave), and hydraulic energy (such as flow of body fluid, blood flow, contraction of blood vessels) into electric energy that may be sufficient for self-powering nanodevices and nanosystems in applications such as in situ, real-time, and implantable biosensing, biomedical monitoring, and biodetection.
Jiang, Congbiao; Zhong, Zhiming; Liu, Baiquan; He, Zhiwei; Zou, Jianhua; Wang, Lei; Wang, Jian; Peng, JunBiao; Cao, Yong
2016-10-05
Inkjet printing has been considered an available way to achieve large size full-color RGB quantum dots LED display, and the key point is to obtain printed film with uniform and flat surface profile. In this work, mixed solvent of 20 vol % 1,2-dichlorobenzene (oDCB) with cyclohexylbenzene (CHB) was used to dissolve green quantum dots (QDs) with CdSe@ZnS/ZnS core/shell structure. Then, by inkjet printing, a flat dotlike QDs film without the coffee ring was successfully obtained on polyetherimide (PEI)-modified ZnO layer, and the printed dots array exhibited great stability and repeatability. Here, adding oDCB into CHB solutions was used to reduce surface tension, and employing ZnO nanoparticle layer with PEI-modified was used to increase the surface free energy. As a result, a small contact angle is formed, which leads to the enhancement of evaporation rate, and then the coffee ring effect was suppressed. The printed dots with flat surface profile were eventually realized. Moreover, inverted green QD-LEDs with PEI-modified ZnO film as electron transport layer (ETL) and printed green QDs film as emission layer were successfully fabricated. The QD-LEDs exhibited the maximum luminance of 12 000 cd/m 2 and the peak current efficiency of 4.5 cd/A at luminance of 1500 cd/m 2 .
All-inkjet-printed flexible ZnO micro photodetector for a wearable UV monitoring device
NASA Astrophysics Data System (ADS)
Tran, Van-Thai; Wei, Yuefan; Yang, Hongyi; Zhan, Zhaoyao; Du, Hejun
2017-03-01
Fabrication of small-sized patterns of inorganic semiconductor onto flexible substrates is a major concern when manufacturing wearable devices for measuring either biometric or environmental parameters. In this study, micro-sized flexible ZnO UV photodetectors have been thoroughly prepared by a facile inkjet printing technology and followed with heat treatments. A simple ink recipe of zinc acetate precursor solution was investigated. It is found that the substrate temperature during zinc precursor ink depositing has significant effects on ZnO pattern shape, film morphology, and crystallization. The device fabricated from the additive manufacturing approach has good bendability, Ohmic contact, short response time as low as 0.3 s, and high on/off ratio of 3525. We observed the sensor’s dependence of response/decay time by the illuminating UV light intensity. The whole process is based on additive manufacturing which has many benefits such as rapid prototyping, saving material, being environmentally friendly, and being capable of creating high-resolution patterns. In addition, this method can be applied to flexible substrates, which makes the device more applicable for applications requiring flexibility such as wearable devices. The proposed all-inkjet-printing approach for a micro-sized ZnO UV photodetector would significantly simplify the fabrication process of micro-sized inorganic semiconductor-based devices. A potential application is real-time monitoring of UV light exposure to warn users about unsafe direct sunlight to implement suitable avoidance solutions.
Can women determine the success of early medical termination of pregnancy themselves?
Cameron, S T; Glasier, A; Johnstone, A; Dewart, H; Campbell, A
2015-01-01
To determine the outcome of early medical termination of pregnancy (TOP) among women who choose a "self assessment" follow up comprising a self-performed low sensitivity urine pregnancy test with instructions on signs/symptoms that mandate contacting the TOP service. A retrospective review of computer databases of 1726 women choosing self-assessment after early medical TOP (<9 weeks) in the UK. The main outcome measures were (a) number of women choosing self-assessment, (b) contact rates with TOP service and (c) time to presentation with an ongoing pregnancy (failed TOP). Ninety-six percent of women having an early medical TOP and going home to expel the pregnancy chose self-assessment. Two percent of women made unscheduled visits to the TOP service. One hundred and eighty-eight women (11%) telephoned the service about concerns related to complications or the success of treatment. There were eight ongoing pregnancies (0.5%; 95% confidence interval 0.2-0.9%). Four were detected within 4 weeks of treatment; the remainder were not detected until one or more missed menses after the procedure. Most women having an early medical TOP, who go home to expel the pregnancy, choose self-assessment. Relatively few women make unscheduled visits or telephone the TOP service. Most ongoing pregnancies are recognized at an early stage, although late presentation (as with all methods of follow up) does still occur. If women are given clear instructions on how and when to conduct a urine pregnancy test and on signs/symptoms that mandate contacting the TOP service, then they can confirm the success of early medical TOP themselves. Late presentation due to failure to recognize an ongoing pregnancy is rare. Copyright © 2014 Elsevier Inc. All rights reserved.
NASA Astrophysics Data System (ADS)
Zhang, Chen; Huang, Xiaohu; Liu, Hongfei; Chua, Soo Jin; Ross, Caroline A.
2016-12-01
Vertically aligned, highly ordered, large area arrays of nanostructures are important building blocks for multifunctional devices. Here, ZnO nanorod arrays are selectively synthesized on Si substrates by a solution method within patterns created by nanoimprint lithography. The growth modes of two dimensional nucleation-driven wedding cakes and screw dislocation-driven spirals are inferred to determine the top end morphologies of the nanorods. Sub-bandgap photoluminescence of the nanorods is greatly enhanced by the manipulation of the hydrogen donors via a post-growth thermal treatment. Lasing behavior is facilitated in the nanorods with faceted top ends formed from wedding cakes growth mode. This work demonstrates the control of morphologies of oxide nanostructures in a large scale and the optimization of the optical performance.
Legislative Affairs Media Contact - Public Affairs - NOAA's National
Media Contacts -NWS Media Contacts -NOAA Media Contacts -Legislative Affairs Media Tools -Archived News Media Contact Matthew R. Borgia Congressional Affairs Specialist - All National Weather Service issues (202)482-1939 Back Top Home | Mission | Strategic Plan | NWS Media Contacts | NOAA Media Contacts US
NASA Astrophysics Data System (ADS)
Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang
2016-07-01
We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).
NASA Astrophysics Data System (ADS)
Vo, T. T.; Poulain, C.; Dijon, J.; Fournier, A.; Chevalier, N.; Mariolle, D.
2012-08-01
High density vertically aligned carbon nanotube (VACNT) forests are considered as a promising conductive material for many applications (interconnects in microelectronics or contact material layer in sliding contact applications). It is thus crucial to characterize the electrical resistance of these forests, especially in contact with the inherent top/bottom conductive substrates. This paper aims to develop an original method to determine the contribution of the different terms in this electrical resistance, which is measured with a tipless atomic force microscope used in high accuracy "force mode." VACNT stacks with different heights on AlCu substrate with or without Au/Pd top coating are studied. The electrical contact area between the probe tip and the forest is considered to be equivalent to the classical electrical contact area between a tip and a rough surface. With this assumption, the scattering resistance of a mono-wall CNT is 14.6 kΩ μm-1, the top/bottom contact resistance is, respectively, 265 kΩ/385 kΩ. The bottom resistance divided in half is obtained by an interface substrate/CNT catalyst treatment. The same assumption leads to an effective compressive modulus of 175 MPa. These results are consistent with the values published by other authors. The proposed method is effective to optimise the CNT interface contact resistance before integration in a more complex functional structure.
Drag reduction through self-texturing compliant bionic materials
Liu, Eryong; Li, Longyang; Wang, Gang; Zeng, Zhixiang; Zhao, Wenjie; Xue, Qunji
2017-01-01
Compliant fish skin is effectively in reducing drag, thus the design and application of compliant bionic materials may be a good choice for drag reduction. Here we consider the drag reduction of compliant bionic materials. First, ZnO and PDMS mesh modified with n-octadecane were prepared, the drag reduction of self-texturing compliant n-octadecane were studied. The results show that the mesh modified by ZnO and PDMS possess excellent lipophilic and hydrophobic, thus n-octadecane at solid, semisolid and liquid state all have good adhesion with modified mesh. The states of n-octadecane changed with temperature, thus, the surface contact angle and adhesive force all varies obviously at different state. The contact angle decreases with temperature, the adhesive force shows a lower value at semisolid state. Furthermore, the drag testing results show that the compliant n-octadecane film is more effectively in drag reduction than superhydrophobic ZnO/PDMS film, indicating that the drag reduction mechanism of n-octadecane is significantly different with superhydrophobic film. Further research shows that the water flow leads to self-texturing of semisolid state n-octadecane, which is similar with compliant fish skin. Therefore, the compliant bionic materials of semisolid state n-octadecane with regular bulge plays a major role in the drag reduction. PMID:28053309
Drag reduction through self-texturing compliant bionic materials.
Liu, Eryong; Li, Longyang; Wang, Gang; Zeng, Zhixiang; Zhao, Wenjie; Xue, Qunji
2017-01-05
Compliant fish skin is effectively in reducing drag, thus the design and application of compliant bionic materials may be a good choice for drag reduction. Here we consider the drag reduction of compliant bionic materials. First, ZnO and PDMS mesh modified with n-octadecane were prepared, the drag reduction of self-texturing compliant n-octadecane were studied. The results show that the mesh modified by ZnO and PDMS possess excellent lipophilic and hydrophobic, thus n-octadecane at solid, semisolid and liquid state all have good adhesion with modified mesh. The states of n-octadecane changed with temperature, thus, the surface contact angle and adhesive force all varies obviously at different state. The contact angle decreases with temperature, the adhesive force shows a lower value at semisolid state. Furthermore, the drag testing results show that the compliant n-octadecane film is more effectively in drag reduction than superhydrophobic ZnO/PDMS film, indicating that the drag reduction mechanism of n-octadecane is significantly different with superhydrophobic film. Further research shows that the water flow leads to self-texturing of semisolid state n-octadecane, which is similar with compliant fish skin. Therefore, the compliant bionic materials of semisolid state n-octadecane with regular bulge plays a major role in the drag reduction.
Drag reduction through self-texturing compliant bionic materials
NASA Astrophysics Data System (ADS)
Liu, Eryong; Li, Longyang; Wang, Gang; Zeng, Zhixiang; Zhao, Wenjie; Xue, Qunji
2017-01-01
Compliant fish skin is effectively in reducing drag, thus the design and application of compliant bionic materials may be a good choice for drag reduction. Here we consider the drag reduction of compliant bionic materials. First, ZnO and PDMS mesh modified with n-octadecane were prepared, the drag reduction of self-texturing compliant n-octadecane were studied. The results show that the mesh modified by ZnO and PDMS possess excellent lipophilic and hydrophobic, thus n-octadecane at solid, semisolid and liquid state all have good adhesion with modified mesh. The states of n-octadecane changed with temperature, thus, the surface contact angle and adhesive force all varies obviously at different state. The contact angle decreases with temperature, the adhesive force shows a lower value at semisolid state. Furthermore, the drag testing results show that the compliant n-octadecane film is more effectively in drag reduction than superhydrophobic ZnO/PDMS film, indicating that the drag reduction mechanism of n-octadecane is significantly different with superhydrophobic film. Further research shows that the water flow leads to self-texturing of semisolid state n-octadecane, which is similar with compliant fish skin. Therefore, the compliant bionic materials of semisolid state n-octadecane with regular bulge plays a major role in the drag reduction.
Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.
Yum, Woong-Sun; Jeon, Joon-Woo; Sung, Jun-Suk; Seong, Tae-Yeon
2012-08-13
We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through Ag reflectors combined with a Zn middle layer. It is shown that the Zn middle layer (5 nm thick) suppresses the agglomeration of Ag reflectors by forming ZnO and dissolving into Ag. The Ag/Zn/Ag contacts show a specific contact resistance of 6.2 × 10(-5) Ωcm(2) and reflectance of ~83% at a wavelength of 440 nm when annealed at 500 °C, which are much better than those of Ag only contacts. Blue LEDs fabricated with the 500 °C-annealed Ag/Zn/Ag reflectors show a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the annealed Ag only contacts. LEDs with the 500 °C-annealed Ag/Zn/Ag contacts exhibit 34% higher output power (at 20 mA) than LEDs with the annealed Ag only contacts.
Plasma-enhanced atomic layer deposition zinc oxide for multifunctional thin film electronics
NASA Astrophysics Data System (ADS)
Mourey, Devin A.
A novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process has been used to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200°C. Weak oxidant PEALD provides a simple, fast deposition process which results in uniform, conformal coatings and highly crystalline, dense ZnO thin films. These films and resulting devices have been compared with those prepared by spatial atomic layer deposition (SALD) throughout the work. Both PEALD and SALD ZnO TFTs have high field-effect mobility (>20 cm 2/V·s) and devices with ALD Al2O3 passivation can have excellent bias stress stability. Temperature dependent measurements of PEALD ZnO TFTs revealed a mobility activation energy < 5 meV and can be described using a simple percolation model with a Gaussian distribution of near-conduction band barriers. Interestingly, both PEALD and SALD devices operate with mobility > 1 cm2/V·s even at temperatures < 10 K. The effects of high energy irradiation have also been investigated. Devices exposed to 1 MGy of gamma irradiation showed small threshold voltage shifts (<2 V) which were fully recoverable with short (1 min) low-temperature (200°C) anneals. ZnO TFTs exhibit a range of non-ideal behavior which has direct implications on how important parameters such as mobility and threshold voltage are quantified. For example, the accumulation-dependent mobility and contact effects can lead to significant overestimations in mobility. It is also found that self-heating plays and important role in the non-ideal behavior of oxide TFTs on low thermal conductivity substrates. In particular, the output conductance and a high current device runaway breakdown effect can be directly ascribed to self-heating. Additionally, a variety of simple ZnO circuits on glass and flexible substrates were demonstrated. A backside exposure process was used to form gate-self-aligned structures with reduced parasitic capacitance and circuits with propagation delay < 10 ns/stage. Finally, to combat some of the self-heating and design challenges associated with unipolar circuits, a simple 4-mask organic-inorganic hybrid CMOS process was demonstrated.
Rahman, P Mujeeb; Mujeeb, V M Abdul; Muraleedharan, K
2017-04-01
As a breakthrough to open up the industrial use of novel environmentally benign packaging material, we propose the first report on portable chitosan-ZnO nano-composite pouches that will serve as elite entrants in smart packaging. A facile, one pot procedure was adopted for the preparation of the C-ZnC films. In order to tune the property of C-ZnC films, four different composite films were prepared by varying the concentration of ZnO. The prepared films were found to be much superior when compared to bare chitosan and other conventional films. Two bacterial strains that commonly contaminate in packed meat were selected as target microbes to elucidate the antimicrobial activity of the prepared C-ZnO film. Detailed investigations revealed that the antimicrobial efficiency is linearly related to the amount of ZnO nano-particles in the composite. The C-2 films exhibited excellent antimicrobial activity and was fabricated into packaging pouches for raw meat. The prepared pouches showed significant action against the microbes in raw meat owing to its complete inhibition of microbial growth on the sixth day of storage at 4°C. The C-2 pouches stand as a top-notch material when compared to polyethylene bag in extending the shelf life of raw meat. Copyright © 2017 Elsevier B.V. All rights reserved.
In vitro degradation of ZnO flowered coated Zn-Mg alloys in simulated physiological conditions.
Alves, Marta M; Prosek, Tomas; Santos, Catarina F; Montemor, Maria F
2017-01-01
Flowered coatings composed by ZnO crystals were successfully electrodeposited on Zn-Mg alloys. The distinct coatings morphologies were found to be dependent upon the solid interfaces distribution, with the smaller number of bigger flowers (ø 46μm) obtained on Zn-Mg alloy containing 1wt.% Mg (Zn-1Mg) contrasting with the higher number of smaller flowers (ø 38μm) achieved on Zn-Mg alloy with 2wt.% Mg (Zn-2Mg). To assess the in vitro behaviour of these novel resorbable materials, a detailed evaluation of the degradation behaviour, in simulated physiological conditions, was performed by electrochemical impedance spectroscopy (EIS). The opposite behaviours observed in the corrosion resistances resulted in the build-up of distinct corrosion layers. The products forming these layers, preferentially detected at the flowers, were identified and their spatial distribution disclosed by EDS and Raman spectroscopy techniques. The presence of smithsonite, simonkolleite, hydrozincite, skorpionite and hydroxyapatite were assigned to both corrosion layers. However the distinct spatial distributions depicted may impact the biocompatibility of these resorbable materials, with the bone analogue compounds (hydroxyapatite and skorpionite) depicted in-between the ZnO crystals and on the top corrosion layer of Zn-1Mg flowers clearly contrasting with the hindered layer formed at the interface of the substrate with the flowers on Zn-2Mg. Copyright © 2016 Elsevier B.V. All rights reserved.
The roles of buffer layer thickness on the properties of the ZnO epitaxial films
NASA Astrophysics Data System (ADS)
Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou
2016-12-01
In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.
Low power gas sensor array on flexible acetate substrate
NASA Astrophysics Data System (ADS)
Benedict, Samatha; Basu, Palash Kumar; Bhat, Navakanta
2017-07-01
In this paper, we present a novel approach of fabricating a low-cost and low power gas sensor array on flexible acetate sheets for sensing CO, SO2, H2 and NO2 gases. The array has four sensor elements with an integrated microheater which can be individually controlled enabling the monitoring of four gases. The thermal properties of the microheater characterized by IR imaging are presented. The microheater with an active area of 15 µm × 5 µm reaches a temperature of 300 °C, consuming 2 mW power, the lowest reported on flexible substrates. A sensing electrode is patterned on top of the microheater, and a nanogap (100 nm) is created by an electromigration process. This nanogap is bridged by four sensing materials doped with platinum, deposited using a solution dispensing technique. The sensing material characterization is completed using energy dispersive x-ray analysis. The sensing characteristics of ZnO for CO, V2O5 for SO2, SnO2 for H2 and WO3 for NO2 gases are studied at different microheater voltages. The sensing characteristics of ZnO at different bending angles is also studied, which shows that the microheater and the sensing material are intact without any breaking upto a bending angle of 20°. The ZnO CO sensor shows sensitivity of 146.2% at 1 ppm with good selectivity.
NASA Astrophysics Data System (ADS)
Richardson, Beau J.; Zhu, Leize; Yu, Qiuming
2017-04-01
Indium tin oxide (ITO) is the most common transparent electrode used in organic photovoltaics (OPVs), yet limited indium reserves and poor mechanical properties make it non-ideal for large-scale OPV production. To replace ITO, we designed, fabricated, and deployed plasmonic nanostructured electrodes in inverted OPV devices. We found that active layer absorption is significantly impacted by ZnO thickness which affects the optical field distribution inside the resonant cavity formed between the plasmonic nanostructured electrode and top electrode. High quality Cr/Au nanostructured electrodes were fabricated by nanoimprint lithography and deployed in ITO-free inverted devices on glass. Devices with thinner ZnO showed a PCE as high as 5.70% and higher J SC’s than devices on thicker ZnO, in agreement with finite-difference time-domain simulations. In addition, as the active layer was made optically thin, ITO-based devices showed diminished J SC while the resonant cavity effect from plasmonic nanostructured electrodes retained J SC. Preliminary ITO-free, flexible devices on PET showed a PCE of 1.82% and those fabricated on ultrathin and conformable Parylene substrates yielded an initial PCE over 1%. The plasmonic electrodes and device designs in this work show promise for developing highly functioning conformable devices that can be applied to numerous needs for lightweight, ubiquitous power generation.
Enhancement of antibacterial activity in nanofillers incorporated PSF/PVP membranes
NASA Astrophysics Data System (ADS)
Pramila, P.; Gopalakrishnan, N.
2018-04-01
An attempt has been made to investigate the nanofillers incorporated polysulfone (PSF) and polyvinylpyrrolidone (PVP) polymer membranes prepared by phase inversion method. Initially, the nanofillers, viz, Zinc Oxide (ZnO) nanoparticle, Graphene Oxide-Zinc Oxide (GO-ZnO) nanocomposite were synthesized and then directly incorporated into PSF/PVP blend during the preparation of membranes. The prepared membranes have been subjected to FE-SEM, AFM, BET, contact angle, tensile test and anti-bacterial studies. Significant membrane morphologies and nanoporous properties have been observed by FE-SEM and BET, respectively. It has been observed that hydrophilicity, mechanical strength and water permeability of the ZnO and GO-ZnO incorporated membranes were enhanced than bare membrane. Antibacterial activity was assessed by measuring the inhibition zones formed around the membrane by disc-diffusion method using Escherichia coli (gram-negative) as a model bacterium. Again, it has been observed that nanofillers incorporated membrane exhibits high antibacterial performance compared to bare membrane.
Wettability control of micropore-array films by altering the surface nanostructures.
Chang, Chi-Jung; Hung, Shao-Tsu
2010-07-01
By controlling the surface nanostructure, the wettability of films with similar pore-array microstructure can be tuned from hydrophilic to nearly superhydrophobic without variation of the chemical composition. PA1 pore-array film consisting of the horizontal ZnO nanosheets was nearly superhydrophobic. PA2 pore-array film consisting of growth-hindered vertically-aligned ZnO nanorods was hydrophilic. The influences of the nanostructure shape, orientation and the micropore size on the contact angle of the PA1 films were studied. This study provides a new approach to control the wettability of films with similar pore-array structure at the micro-scale by changing their surface nanostructure. PA1 films exhibited irradiation induced reversible wettability transition. The feasibility of creating a wetted radial pattern by selective UV irradiation of PA1 film through a mask with radial pattern and water vapor condensation was also evaluated.
NASA Astrophysics Data System (ADS)
Ohteki, Yusuke; Sugiyama, Mutsumi
2018-07-01
A high-transparency ZnO thin film of high carrier concentration was grown by conventional RF sputtering, where the carrier concentration was continuously varied from 1016 to 1019 cm‑3 by controlling the amounts of O2 and H2 sputtering gases. To prevent the formation of a Schottky junction at the contact with In–Zn–O, and to improve the fill factor of a visible-light-transparent solar cell, a Ag-paste/NiO/ZnO/ZnO:H/IZO p–n diode structure with the carrier concentration of the ZnO:H layer of 1019 cm‑3 was fabricated. It is possible to reduce the depletion width and inverse the rectification action around ZnO/IZO by controlling the carrier concentration of the ZnO layer while maintaining the high transparency.
High sensitivity, solid state neutron detector
Stradins, Pauls; Branz, Howard M; Wang, Qi; McHugh, Harold R
2015-05-12
An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
High sensitivity, solid state neutron detector
Stradins, Pauls; Branz, Howard M.; Wang, Qi; McHugh, Harold R.
2013-10-29
An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
Tsin, Fabien; Thomere, Angélica; Bris, Arthur Le; Collin, Stéphane; Lincot, Daniel; Rousset, Jean
2016-05-18
Highly transparent and conductive materials are required for many industrial applications. One of the interesting features of ZnO is the possibility to dope it using different elements, hence improving its conductivity. Results concerning the zinc oxide thin films electrodeposited in a zinc perchlorate medium containing a boron precursor are presented in this study. The addition of boron to the electrolyte leads to significant effects on the morphology and crystalline structure as well as an evolution of the optical properties of the material. Varying the concentration of boric acid from 0 to 15 mM strongly improves the compactness of the deposit and increases the band gap from 3.33 to 3.45 eV. Investigations were also conducted to estimate and determine the influence of boric acid on the electrical properties of the ZnO layers. As a result, no doping effect effect by boron was demonstrated. However, the role of boric acid on the material quality has also been proven and discussed. Boric acid strongly contributes to the growth of high quality electrodeposited zinc oxide. The high doping level of the film can be attributed to the perchlorate ions introduced in the bath. Finally, a ZnO layer electrodeposited in a boron rich electrolyte was tested as front contact of a Cu(In, Ga)(S, Se)2 based solar cell. An efficiency of 12.5% was measured with a quite high fill factor (>70%) which confirms the high conductivity of the ZnO thin film.
NASA Astrophysics Data System (ADS)
Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei
2018-03-01
Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.
Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs
Zhang, Yuewei; Allerman, Andrew A.; Krishnamoorthy, Sriram; ...
2016-04-11
The efficiency of ultra violet LEDs has been critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling based p-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs withoutmore » the need for complex manufacturing methods such as flip chip bonding.« less
Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho
2017-02-03
We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In 3+ ) and smaller (Ga 3+ ) than the host Zn 2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.
High-performance optical projection controllable ZnO nanorod arrays for microweighing sensors.
Wang, Hongbo; Jiang, Shulan; Zhang, Lei; Yu, Bingjun; Chen, Duoli; Yang, Weiqing; Qian, Linmao
2018-03-08
Optical microweighing sensors are an essential component of micro-force measurements in physical, chemical, and biological detection fields, although, their limited detection range (less than 15°) severely hinders their wide application. Such a limitation is mainly attributed to the essential restrictions of traditional light reflection and optical waveguide modes. Here, we report a high-performance optical microweighing sensor based on the synergistic effects of both a new optical projection mode and a ZnO nanorod array sensor. Ascribed to the unique configuration design of this sensing method, this optical microweighing sensor has a wide detection range (more than 80°) and a high sensitivity of 90 nA deg -1 , which is much larger than that of conventional microcantilever-based optical microweighing sensors. Furthermore, the location of the UV light source can be adjusted within a few millimeters, meaning that the microweighing sensor does not need repetitive optical calibration. More importantly, for low height and small incident angles of the UV light source, we can obtain highly sensitive microweighing properties on account of the highly sensitive ZnO nanorod array-based UV sensor. Therefore, this kind of large detection range, non-contact, and non-destructive microweighing sensor has potential applications in air quality monitoring and chemical and biological detection.
NASA Astrophysics Data System (ADS)
Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho
2017-02-01
We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.
Azizi, Susan; Mahdavi Shahri, Mahnaz; Mohamad, Rosfarizan
2017-06-08
In the present study, ZnO nanoparticles (NPs) were synthesized in zerumbone solution by a green approach and appraised for their ability to absorb Pb(II) ions from aqueous solution. The formation of as-synthesized NPs was established by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), and UV-visible studies. The XRD and TEM analyses revealed high purity and wurtzite hexagonal structure of ZnO NPs with a mean size of 10.01 ± 2.6 nm. Batch experiments were performed to investigate the impact of process parameters viz. Pb(II) concentration, pH of solution, adsorbent mass, solution temperature, and contact time variations on the removal efficiency of Pb(II). The adsorption isotherm data provided that the adsorption process was mainly monolayer on ZnO NPs. The adsorption process follows pseudo-second-order reaction kinetic. The maximum removal efficiencies were 93% at pH 5. Thermodynamic parameters such as enthalpy change (ΔH⁰), free energy change (ΔG⁰), and entropy change (ΔS⁰) were calculated; the adsorption process was spontaneous and endothermic. The good efficiency of the as-synthesized NPs makes them attractive for applications in water treatment, for removal of heavy metals from aqueous system.
Bus bar electrical feedthrough for electrorefiner system
Williamson, Mark; Wiedmeyer, Stanley G; Willit, James L; Barnes, Laurel A; Blaskovitz, Robert J
2013-12-03
A bus bar electrical feedthrough for an electrorefiner system may include a retaining plate, electrical isolator, and/or contact block. The retaining plate may include a central opening. The electrical isolator may include a top portion, a base portion, and a slot extending through the top and base portions. The top portion of the electrical isolator may be configured to extend through the central opening of the retaining plate. The contact block may include an upper section, a lower section, and a ridge separating the upper and lower sections. The upper section of the contact block may be configured to extend through the slot of the electrical isolator and the central opening of the retaining plate. Accordingly, relatively high electrical currents may be transferred into a glovebox or hot-cell facility at a relatively low cost and higher amperage capacity without sacrificing atmosphere integrity.
CONFOLD2: improved contact-driven ab initio protein structure modeling.
Adhikari, Badri; Cheng, Jianlin
2018-01-25
Contact-guided protein structure prediction methods are becoming more and more successful because of the latest advances in residue-residue contact prediction. To support contact-driven structure prediction, effective tools that can quickly build tertiary structural models of good quality from predicted contacts need to be developed. We develop an improved contact-driven protein modelling method, CONFOLD2, and study how it may be effectively used for ab initio protein structure prediction with predicted contacts as input. It builds models using various subsets of input contacts to explore the fold space under the guidance of a soft square energy function, and then clusters the models to obtain the top five models. CONFOLD2 obtains an average reconstruction accuracy of 0.57 TM-score for the 150 proteins in the PSICOV contact prediction dataset. When benchmarked on the CASP11 contacts predicted using CONSIP2 and CASP12 contacts predicted using Raptor-X, CONFOLD2 achieves a mean TM-score of 0.41 on both datasets. CONFOLD2 allows to quickly generate top five structural models for a protein sequence when its secondary structures and contacts predictions at hand. The source code of CONFOLD2 is publicly available at https://github.com/multicom-toolbox/CONFOLD2/ .
Li, Tao; Hauptmann, Jonas Rahlf; Wei, Zhongming; Petersen, Søren; Bovet, Nicolas; Vosch, Tom; Nygård, Jesper; Hu, Wenping; Liu, Yunqi; Bjørnholm, Thomas; Nørgaard, Kasper; Laursen, Bo W
2012-03-08
A novel method using solution-processed ultrathin chemically derived graphene films as soft top contacts for the non-destructive fabrication of molecular junctions is demonstrated. We believe this protocol will greatly enrich the solid-state test beds for molecular electronics due to its low-cost, easy-processing and flexible nature. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Interdigitated photovoltaic power conversion device
Ward, James Scott; Wanlass, Mark Woodbury; Gessert, Timothy Arthur
1999-01-01
A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.
Interdigitated photovoltaic power conversion device
Ward, J.S.; Wanlass, M.W.; Gessert, T.A.
1999-04-27
A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device. 15 figs.
Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas
2016-09-23
InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.
NASA Astrophysics Data System (ADS)
Zhou, Shengjun; Zheng, Chenju; Lv, Jiajiang; Gao, Yilin; Wang, Ruiqing; Liu, Sheng
2017-07-01
We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO2/SiO2 DBR is used for reflective p-type ohmic contact, resulting in a significant reduction in absorption of light by opaque metal electrodes. The finely distributed via hole-based n-type contacts are formed on the n-GaN layer by etching via holes through p-GaN and multiple quantum well (MQW) active layer, leading to reduced lateral current spreading length, and hence alleviated current crowding effect. The forward voltage of the DLE-FCLED is 0.31 V lower than that of the top-emitting LED at 90 mA. The light output power of DLE-FCLED is 15.7% and 80.8% higher than that of top-emitting LED at 90 mA and 300 mA, respectively. Compared to top- emitting LED, the external quantum efficiency (EQE) of DLE-FCLED is enhanced by 15.4% and 132% at 90 mA and 300 mA, respectively. The maximum light output power of the DLE-FCLED obtained at 195.6 A/cm2 is 1.33 times larger than that of the top-emitting LED obtained at 93 A/cm2.
Biological interactions in vitro of zinc oxide nanoparticles of different characteristics
NASA Astrophysics Data System (ADS)
Aula, Sangeetha; Lakkireddy, Samyuktha; AVN, Swamy; Kapley, Atya; Jamil, Kaiser; Rao Tata, Narasinga; Hembram, Kaliyan
2014-09-01
Zinc oxide nanoparticles (ZnO NPs) have recently received growing attention for various biomedical applications, including use as therapeutic or carrier for drug delivery and/or imaging. For the above applications, the NPs necessitate administration into the body leading to their systemic exposure. To better anticipate the safety, make risk assessment, and be able to interpret the future preclinical and clinical safety data, it is important to systematically understand the biological interaction of the NPs, the consequences of such interaction, and the mechanisms associated with the toxicity induction, with the important components with which the NPs are expected to be in contact after systemic exposure. In this context, we report here a detailed study on the biological interactions in vitro of the ZnO NPs with healthy human primary lymphocytes as these are the important immune components and the first systemic immune contact, and with the whole human blood. Additionally, the influence, if any, of the NPs shape (spheres and rods) on the biological interaction has been evaluated. The ZnO NPs caused toxicity (30% at 12.5 μg ml-1 spheres and 10.5 μg ml-1 rods; 50% at 22 μg ml-1 spheres and 19.5 μg ml-1 rods) to the lymphocytes at molecular and genetic level in a dose-dependent and shape-dependent manner, while the interaction consequences with the blood and blood components such as RBC, platelets was only dose-dependent and not shape-dependent. This is evident from the decreased RBC count due to increased %Hemolysis (5.3% in both the spheres- and rods-treated blood) and decreased platelet count due to increased %platelet aggregation (28% in spheres-treated and 33% in rods-treated platelet-rich plasma). Such in-depth understanding of the biological interaction of the NPs, the consequences, and the associated mechanisms in vitro could be expected to allow anticipating the NP safety for risk assessment and for interpretation of the preclinical and clinical safety data when available.
Resonant tunneling diodes based on ZnO for quantum cascade structures (Conference Presentation)
NASA Astrophysics Data System (ADS)
Hinkov, Borislav; Schwarz, Benedikt; Harrer, Andreas; Ristanic, Daniela; Schrenk, Werner; Hugues, Maxime; Chauveau, Jean-Michel; Strasser, Gottfried
2017-02-01
The terahertz (THz) spectral range (lambda 30µm - 300µm) is also known as the "THz-gap" because of the lack of compact semiconductor devices. Various real-world applications would strongly benefit from such sources like trace-gas spectroscopy or security-screening. A crucial step is the operation of THz-emitting lasers at room temperature. But this seems out of reach with current devices, of which GaAs-based quantum cascade lasers (QCLs) seem to be the most promising ones. They are limited by the parasitic, non-optical LO-phonon transitions (36meV in GaAs), being on the same order as the thermal energy at room temperature (kT = 26meV). This can be solved by using larger LO-phonon materials like ZnO (E_LO = 72meV). But to master the fabrication of ZnO-based QC structures, a high quality epitaxial growth is crucial followed by a well-controlled fabrication process including ZnO/ZnMgO etching. We use devices grown on m-plane ZnO-substrate by molecular beam epitaxy. They are patterned by reactive ion etching in a CH4-based chemistry (CH4:H2:Ar/30:3:3 sccm) into 50μm to 150μm square mesas. Resonant tunneling diode structures are investigated in this geometry and are presented including different barrier- and well-configurations. We extract contact resistances of 8e-5 Omega cm^2 for un-annealed Ti/Au contacts and an electron mobility of above 130cm^2/Vs, both in good agreement with literature. Proving that resonant electron tunneling can be achieved in ZnO is one of the crucial building blocks of a QCL. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 665107.
Selective removal of uranium ions from contaminated waters using modified-X nanozeolite.
Shakur, H R; Rezaee Ebrahim Saraee, Kh; Abdi, M R; Azimi, G
2016-12-01
In order to efficiently remove of uranium anionic species (which are the most dominant species of uranium in natural water at neutral pH) from contaminated waters, nano-NaX zeolite was synthesized and then modified using various divalent cations (Mg 2+ , Ca 2+ , Mn 2+ ) and ZnO nanoparticles (from 1.7 to 10.3wt%). Different characterization techniques of XRF, XRD, FE-SEM, TEM, FT-IR, and AAS were used to characterize the final synthesized absorbents. Sorption experiments by batch technique were done to study the effect of solid-liquid ratio, initial uranium concentration, contact time and temperature under neutral condition of pH and presence of all anions and cations which are available in the waters. Results showed that although nano-NaX zeolite due to its negative framework charge had a low sorption capacity for adsorption of uranium anionic species, but modification of parent nano-NaX zeolite with ZnO nanoparticles and various cations effectively improved its uranium adsorption capacity. Also, results showed that under optimum condition of pH=7.56, contact time of 60min at 27°C with solid-liquid ratio of 20g/L a maximum uranium removal efficiency of 99.7% can be obtained in the presence of all anions and cations which are available in the drinking waters by NaX/ZnO nanocomposite. Copyright © 2016 Elsevier Ltd. All rights reserved.
Jafari, Maryam; Rahimi, Mahmood Reza; Ghaedi, Mehrorang; Javadian, Hamedreza; Asfaram, Arash
2017-12-01
A continuous adsorption was used for removal of azure II (AZ II) and auramine O (AO) from aqueous solutions using Pinus eldarica stalks activated carbon (PES-AC) from aqueous solutions. The effects of initial dye concentration, flow rate, bed height and contact time on removal percentage of AO and AZ II were evaluated and optimized by central composite design (CCD) at optimum pH = 7.0. ZnO nanoparticles loaded on activated carbon were also used to remove AO and AZ II at pH = 7.0 and other optimum conditions. The breakthrough curves were obtained at different flow rates, initial dye concentrations and bed heights and the experimental data were fitted by Thomas, Adams-Bohart and Yoon-Nelson models. The main parameters of fixed-bed column including its adsorption capacity at breakthrough point (q b ), adsorption capacity at saturation point (q s ), mass transfer zone (MTZ), total removal percentage (R%), and empty bed contact time (EBCT) were calculated. The removal percentages calculated for AZ II and AO II were in the range of 51.6-61.1% and 40.6-61.6%, respectively. Bed adsorption capacity (N 0 ) and critical bed depth (Z 0 ) were obtained by BDST model. Copyright © 2017 Elsevier Inc. All rights reserved.
Aqueous synthesis of zinc oxide films for GaN optoelectronic devices
NASA Astrophysics Data System (ADS)
Reading, Arthur H.
GaN-based LEDs have generally made use of ITO transparent contacts as current-spreading layers for uniform current injection. However, the high raw material and processing costs of ITO layers have generated interest in potentially cheaper alternatives. In this work, zinc oxide transparent layers were fabricated by a low-cost, low-temperature aqueous epitaxial growth method at 90°C for use as transparent contacts to GaN LEDs on c-plane sapphire, and on semipolar bulk GaN substrates. Low-voltage operation was achieved for c-plane devices, with voltages below 3.8V for 1mm2 broad-area LEDs at a current density of 30A/cm 2. Blue-green LEDs on 202¯1¯-plane GaN also showed low voltage operation below 3.5V at 30A/cm2. Ohmic contact resistivity of 1:8 x 10-2Ocm2 was measured for films on (202¯1) p-GaN templates. Ga-doped films had electrical conductivities as high as 660S/cm after annealing at 300°C. Optical characterization revealed optical absorption coefficients in the 50--200cm -1 range for visible light, allowing thick films with sheet resistances below 10O/□ to be grown while minimizing absorption of the emitted light. Accurate and reproducible etch-free patterning of the ZnO films was achieved using templated growths with SiOx hard masks. A roughening method is described which was found to increase peak LED efficiencies by 13% on c-plane patterned sapphire (PSS) substrates. In addition, ZnO films were successfully employed as laser-cladding layers for blue (202¯1) lasers, with a threshold current density of 8.8kA/cm 2.
The Effect of Thickness of ZnO Thin Films on Hydrophobic Self-Cleaning Properties
NASA Astrophysics Data System (ADS)
Mufti, N.; Arista, D.; Diantoro, M.; Fuad, A.; Taufiq, A.; Sunaryono
2017-05-01
Glass coating can be conducted by using ZnO-photocatalyst based semiconductor material since it is preeminent in decomposing organics compound and dangerous bacteria which often contaminates the environment. If there are dirt containing organics compound on the glass, the ZnO photocatalyst coat can be applied as self-cleaning, usually called self-cleaning glass. It depends on the coating thickness which can be controlled by setting the speed of spin coating. In this research, the various rotating speeds of spin coating were conducted at 2000 rpm, 3000 rpm, and 4000 rpm to control the thickness. The raw materials used in this research were Zn(CH3COOH)2.2H2O (PA 99,5%), Ethylene glycol, Diethanolamine (PA 99%), Isopropanol Alkohol, Glycerol, and Ashton. Synthesis methods used were sol-gel prior to spin coating technic were applied. The results of the film were characterized by using SEM, XRD, and UV-Spectrophotometer. The crystal structure was analyzed by using Highscore plus and GSAS software, the size crystal was calculated by using Scherrer equation, a contact angle with ImageJ software. It was shown that ZnO thin film had been successfully synthesized with the crystal size around 21 nm up to 26 nm. The absorption value is higher due to the increasing of coat thickness with bandgap ± 3.2 eV. The test result of hydrophobic and hydrophilic characteristics show that all samples of ZnO thin film with the thickness ± 1.050 μm, ± 0.450 μm, ± 0.250 μm can be applied as self-cleaning glass. The best result was gained with the thickness of thin film ± 1.050 μm.
NASA Astrophysics Data System (ADS)
Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad
2017-12-01
Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.
Backside contacted field effect transistor array for extracellular signal recording.
Ingebrandt, S; Yeung, C K; Staab, W; Zetterer, T; Offenhäusser, A
2003-04-01
A new approach to the design of field-effect transistor (FET) sensors and the use of these FETs in detecting extracellular electrophysiological recordings is reported. Backside contacts were engineered by deep reactive ion etching and a gas phase boron doping process of the holes using planar diffusion sources. The metal contacts were designed to fit on top of the bonding pads of a standard industrial 22-pin DIL (dual inline) chip carrier. To minimise contact resistance, the metal backside contacts of the chips were electroless plated with gold. The chips were mounted on top of the bonding pads using a standard flip-chip process and a fineplacer unit previously described. Rat embryonic myocytes were cultured on these new devices (effective growth area 6 x 6 mm(2)) in order to confirm their validity in electrophysiological recording. Copyright 2003 Elsevier Science B.V.
Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells.
Lang, Felix; Gluba, Marc A; Albrecht, Steve; Rappich, Jörg; Korte, Lars; Rech, Bernd; Nickel, Norbert H
2015-07-16
Perovskite solar cells with transparent contacts may be used to compensate for thermalization losses of silicon solar cells in tandem devices. This offers a way to outreach stagnating efficiencies. However, perovskite top cells in tandem structures require contact layers with high electrical conductivity and optimal transparency. We address this challenge by implementing large-area graphene grown by chemical vapor deposition as a highly transparent electrode in perovskite solar cells, leading to identical charge collection efficiencies. Electrical performance of solar cells with a graphene-based contact reached those of solar cells with standard gold contacts. The optical transmission by far exceeds that of reference devices and amounts to 64.3% below the perovskite band gap. Finally, we demonstrate a four-terminal tandem device combining a high band gap graphene-contacted perovskite top solar cell (Eg = 1.6 eV) with an amorphous/crystalline silicon bottom solar cell (Eg = 1.12 eV).
NASA Astrophysics Data System (ADS)
Bayram, C.; Shiu, K. T.; Zhu, Y.; Cheng, C. W.; Sadana, D. K.; Teherani, F. H.; Rogers, D. J.; Sandana, V. E.; Bove, P.; Zhang, Y.; Gautier, S.; Cho, C.-Y.; Cicek, E.; Vashaei, Z.; McClintock, R.; Razeghi, M.
2013-03-01
Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Boyle, T. J.
2012-03-01
During this task, Silane functionalized TiO2 and HK3Ti4O4(SiO4)3 were sent to Goodyear (GY) for testing. These materials were characterized based on their interaction with the model elastomer, squalene. The Van der Waals interactions and Hamaker Constants for ZnO particles in squalene and rubber materials were characterized and it was determined that a 10-20 nm spacing was necessary between primary filler particles to maintain a stable nanocomposite. Contact angle measurements on the ZnO and ZnO-silane materials indicated that the solvent should wet the particles, and solvophobic attractions should not be present. These studies showed that the surface modification with sulfosilane couplingmore » agents was successful, and high levels of dispersion of the particles remained possible. Further, a novel surface charging phenomenon where negative surface charging is developed in the squalene environment was observed and corroborated by measurements of particle size and of the surface modified materials in squalene. This impacts the dispersion of the particles according to the traditional colloidal interpretation of electrostatic repulsive forces between particles. Additionally, thin nanocomposite fibers were developed using electrospinning. The size and shape of the oxides did not change during the electrospinning process, although the shape of the fiber and the distribution of the particles, particularly for ZnO, was not ideal. There was an obvious increase in elastic modulus and hardness from the addition of the oxides, but differentiating the oxides, and particularly the surfactants, was difficult. The A-1289 lead to the greatest dispersion of the filler particles, while the A-1589 and the NXT produced clustered particle aggregates. This agrees with previous study of these materials in low molecular weight squalene solvent studies reported earlier. The behavior of the nanoparticle ZnO and the microparticle silica is different as well, with the ZnO being contained within the elastomer, and the SiO2 forming monolayers at the surface of the elastomer. The dynamic mechanical analysis did not show clear trends between the surface modification and the aggregate structure. In the silica particles, the NXT led to the least particle interaction, followed by the A-1289 and highest particle interaction found for the A-1589. For the nanosized ZnO, the best dispersion was found for the A-1589, with both the A-1289 and NXT exhibiting frequency dependent responses.« less
NASA Astrophysics Data System (ADS)
Sanes Molina, Jose
Room-temperature ionic liquids (ILs) are high performance fluids that stand out because of a wide range of functional properties and exhibit a great potential for engineering applications. Although they have been employed as lubricants in metal-metal, metal-ceramic and ceramic-ceramic contacts, in this thesis we present the first study about the use of ILs as pure lubricants in polymer/steel contacts. The tests have established the efficacy of the ILs to reduce friction coefficient and wear rates in a variety of kinds of contacts, and criogenic to high temperature performance. Novel dispersions of ILs in polymers have been obtained with epoxy resin and thermoplastics as matrix. Therefore, the thermal, mechanical and tribological properties of the materials have studied and are discussed in the present thesis. Furthermore, the contents of ILs in the polymer matrix have been studied in relation to the tribological properties using Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectrometry (EDS), the wear mechanisms that operated in the contacts were established. The novel dispersions showed a reduction in the friction coefficient and wear in comparison with neat polymers, reaching in some cases a decrease of 79%. In the case of thermoplastics such as polystyrene and polyamide 6, the new dispersions showed a reduction in friction coefficient and wear in the same range as that of the ILs when used as external lubricants in the steel/polymer contact. In addition nanoparticles of zinc oxide were used to obtain polycarbonate based nanohybrids with the purpose of improving the tribological properties. Novel nanohybrids of zinc oxide and modified zinc oxide were obtained. The mechanical, thermal and tribological properties were studied. The results of experiments clearly demonstrated that the use of ILs modifies the shape and size of the ZnO nanoparticles, increasing the tribological properties of the novel nanohybrids. Different techniques such as EDS, Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectrometry (XPS) were used to examine and establish the surface interactions and mechanism that operated between ILs and ZnO. In summary, the results reveal the importance of the processing parameters on the stability of the nature of the anion in the ILs.
Miniature pipe crawler tractor
McKay, Mark D.; Anderson, Matthew O.; Ferrante, Todd A.; Willis, W. David
2000-01-01
A pipe crawler tractor may comprise a half tractor assembly having a first base drive wheel, a second base drive wheel, and a top drive wheel. The drive wheels are mounted in spaced-apart relation so that the top drive wheel is positioned between the first and second base drive wheels. The mounting arrangement is also such that the first and second base drive wheels contact the inside surface of the pipe at respective first and second positions and so that the top drive wheel contacts the inside surface of the pipe at a third position, the third position being substantially diametrically opposed to the first and second positions. A control system connected to the half tractor assembly controls the rotation of the first base wheel, the second base wheel, and the top drive wheel to move the half tractor assembly within the pipe.
Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors
Roy, U. N.; Mundle, R. M.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Pradhan, A. K.; James, R. B.
2016-01-01
CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability. PMID:27216387
Yoon, Ju-Heon; Park, Jong-Keuk; Kim, Won Mok; Lee, JinWoo; Pak, Hisun; Jeong, Jeung-hyun
2015-01-01
The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade module without using special sample fabrication methods. The AZO layers between cells were not scribed; instead, the CIGS/CdS/i-ZnO/AZO device was patterned in a long stripe to permit measurement of the Mo electrode pair resistance over current paths through two P2 contacts (Mo/AZO) and along the AZO layer. The intercept and slope of the resistance as a function of the electrode interval yielded the P2 contact resistance and the TCO resistance, respectively. Calibration of the parasitic resistances is discussed as a method of improving the measurement accuracy. The contribution of the P2 contact resistance to the series resistance was comparable to that of the TCO resistance, and its origin was attributed to remnant MoSe2 phases in the P2 region, as verified by transmission electron microscopy. PMID:25573530
Yao, Qiufang; Wang, Chao; Fan, Bitao; Wang, Hanwei; Sun, Qingfeng; Jin, Chunde; Zhang, Hong
2016-01-01
In the present paper, uniformly large-scale wurtzite-structured ZnO nanorod arrays (ZNAs) were deposited onto a wood surface through a one-step solvothermal method. The as-prepared samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), thermogravimetry (TG), and differential thermal analysis (DTA). ZNAs with a diameter of approximately 85 nm and a length of approximately 1.5 μm were chemically bonded onto the wood surface through hydrogen bonds. The superamphiphobic performance and ultraviolet resistance were measured and evaluated by water or oil contact angles (WCA or OCA) and roll-off angles, sand abrasion tests and an artificially accelerated ageing test. The results show that the ZNA-treated wood demonstrates a robust superamphiphobic performance under mechanical impact, corrosive liquids, intermittent and transpositional temperatures, and water spray. Additionally, the as-prepared wood sample shows superior ultraviolet resistance. PMID:27775091
Chemically Deposited Thin-Film Solar Cell Materials
NASA Technical Reports Server (NTRS)
Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.
2005-01-01
We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.
NASA Astrophysics Data System (ADS)
Yao, Qiufang; Wang, Chao; Fan, Bitao; Wang, Hanwei; Sun, Qingfeng; Jin, Chunde; Zhang, Hong
2016-10-01
In the present paper, uniformly large-scale wurtzite-structured ZnO nanorod arrays (ZNAs) were deposited onto a wood surface through a one-step solvothermal method. The as-prepared samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), thermogravimetry (TG), and differential thermal analysis (DTA). ZNAs with a diameter of approximately 85 nm and a length of approximately 1.5 μm were chemically bonded onto the wood surface through hydrogen bonds. The superamphiphobic performance and ultraviolet resistance were measured and evaluated by water or oil contact angles (WCA or OCA) and roll-off angles, sand abrasion tests and an artificially accelerated ageing test. The results show that the ZNA-treated wood demonstrates a robust superamphiphobic performance under mechanical impact, corrosive liquids, intermittent and transpositional temperatures, and water spray. Additionally, the as-prepared wood sample shows superior ultraviolet resistance.
Size-dependent Young’s modulus in ZnO nanowires with strong surface atomic bonds
NASA Astrophysics Data System (ADS)
Fan, Shiwen; Bi, Sheng; Li, Qikun; Guo, Qinglei; Liu, Junshan; Ouyang, Zhongliang; Jiang, Chengming; Song, Jinhui
2018-03-01
The mechanical properties of size-dependent nanowires are important in nano-electro-mechanical systems (NEMSs), and have attracted much research interest. Characterization of the size effect of nanowires in atmosphere directly to broaden their practical application instead of just in high vacuum situations, as reported previously, is desperately needed. In this study, we systematically studied the Young’s modulus of vertical ZnO nanowires in atmosphere. The diameters ranged from 48 nm to 239 nm with a resonance method using non-contact atomic force microscopy. The values of Young’s modulus in atmosphere present extremely strong increasing tendency with decreasing diameter of nanowire due to stronger surface atomic bonds compared with that in vacuum. A core-shell model for nanowires is proposed to explore the Young’s modulus enhancement in atmosphere, which is correlated with atoms of oxygen occurring near the nanowire surface. The modified model is more accurate for analyzing the mechanical behavior of nanowires in atmosphere compared with the model in vacuum. Furthermore, it is possible to use this characterization method to measure the size-related elastic properties of similar wire-sharp nanomaterials in atmosphere and estimate the corresponding mechanical behavior. The study of the size-dependent Young’s modulus in ZnO nanowires in atmosphere will improve the understanding of the mechanical properties of nanomaterials as well as providing guidance for applications in NEMSs, nanogenerators, biosensors and other related areas.
Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho
2017-01-01
We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications. PMID:28155879
Thai, Corrine K; Dai, Haixia; Sastry, M S R; Sarikaya, Mehmet; Schwartz, Daniel T; Baneyx, François
2004-07-20
We have used the FliTrx cell surface display system to identify disulfide-constrained dodecapeptides binding to the semiconducting metal oxides Cu(2)O and ZnO. Sequence analysis of the inserts revealed that the two populations exhibit similar, yet subtly different patterns of amino acid usage. Both sets of binders were enriched in arginine, tryptophan, and glycine with a higher degree of positional preference in the case of Cu(2)O binders. Tyrosine, proline, and serine were underrepresented in both populations. Peptides binding electrodeposited Cu(2)O or ZnO with high avidity could be subdivided into two classes based on pI and hydrophilicity. In the hydrophilic and positively charged Class I binders, the Arg-X-X-Arg tetrapeptide appears to be implicated in metal oxide binding, whereas Arg-Arg and Arg-Lys pairs allow for discrimination between Cu(2)O and ZnO. Molecular dynamics simulations of the disulfide-constrained peptides suggest that the aforementioned motifs are important to properly orient two basic residues that are likely to contact the metal oxides. The implications of our results in understanding the rules governing the interaction between peptides and inorganic compounds and in their use for the design of hybrid nanoarchitectures are discussed. Copyright 2004 Wiley Periodicals, Inc.
The phase relations in the In 2O 3Fe 2ZnO 4ZnO system at 1350°C
NASA Astrophysics Data System (ADS)
Nakamura, Masaki; Kimizuka, Noboru; Mohri, Takahiko
1990-05-01
The phase relations in the In 2O 3Fe 2ZnO 4ZnO system at 1350°C are determined by means of a classical quenching method. There are a series of homologous solid solutions, In 1.28Fe 0.72O 3(ZnO)InFeO 3(ZnO), In 1.69Fe 0.31O 3(ZnO) 2InFeO 3(ZnO) 2In 0.85Fe 1.15O 3(ZnO) 2, In 2O 3(ZnO) 3InFeO 3(ZnO) 3In 0.78Fe 1.22O 3(ZnO) 3, In 2O 3(ZnO) 4InFeO 3(ZnO) 4In 0.62Fe 1.38O 3(ZnO) 4, In 2O 3(ZnO) 5InFeO 3(ZnO) 5In 0.67Fe 1.33O 3(ZnO) 5, In 2O 3(ZnO) 6InFeO 3(ZnO) 6In 0.60Fe 1.40O 3(ZnO) 6, In 2O 3(ZnO) 7InFeO 3(ZnO) 7In 0.51Fe 1.49O 3(ZnO) 7, In 2O 3(ZnO) 8InFeO 3(ZnO) 8In 1- xFe 1+ xO 3(ZnO) 8 (0.44 ≦ x ≦ 0.64), In 2O 3(ZnO) 9InFeO 3(ZnO) 9In 0.20Fe 1.80O 3(ZnO) 9, In 2O 3(ZnO) 10InFeO 3(ZnO) 10In 1- xFe 1+ xO 3(ZnO) 10 (0.74 ≦ x ≦ 0.89), In 2O 3(ZnO) 11InFeO 3(ZnO) 11In 1- xFe 1+ xO 3(ZnO) 11 (0.60 ≦ x < 1.00), and In 2O 3(ZnO) 13InFeO 3(ZnO) 13Fe 2O 3(ZnO) 13 having the layered structures with space group R overline3m (m = odd) or {P6 3}/{mmc} (m = even) for m in the InFeO 3(ZnO) m. We conclude that there are a series of homologous phases, (Fe 2O 3)(ZnO) m (m ≧ 12) , in the binary ZnOFe 2O 3 system. The lattice constants for these solid solutions are presented as a hexagonal crystal system. It is also concluded that the crystal structures for each solid solution consist of three kinds of layers which are stacked perpendicular to the c-axis in the hexagonal crystal system. In 1+ xFe 1- xO 3(ZnO) m (0 ≦ x ≦ 1) is composed of the InO 1.5, (In xFe 1- xZn)O 2.5, and ZnO layers, and In 1- xFe 1+ xO 3(ZnO) m (0 ≦ x ≦ 1) is composed of (In 1- xFe x)O 1.5, (FeZn)O 2.5, and ZnO layers, respectively. The solid solution range between Fe 2ZnO 4 and In xFe 2- xZnO 4 ( x = 0.40 ± 0.02) with a spinel structure is observed.
Li, Tao; Jevric, Martyn; Hauptmann, Jonas R; Hviid, Rune; Wei, Zhongming; Wang, Rui; Reeler, Nini E A; Thyrhaug, Erling; Petersen, Søren; Meyer, Jakob A S; Bovet, Nicolas; Vosch, Tom; Nygård, Jesper; Qiu, Xiaohui; Hu, Wenping; Liu, Yunqi; Solomon, Gemma C; Kjaergaard, Henrik G; Bjørnholm, Thomas; Nielsen, Mogens Brøndsted; Laursen, Bo W; Nørgaard, Kasper
2013-08-14
A new type of solid-state molecular junction is introduced, which employs reduced graphene oxide as a transparent top contact that permits a self-assembled molecular monolayer to be photoswitched in situ, while simultaneously enabling charge-transport measurements across the molecules. The electrical switching behavior of a less-studied molecular switch, dihydroazulene/vinylheptafulvene, is described, which is used as a test case. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Search for single top quark production via contact interactions at LEP2
NASA Astrophysics Data System (ADS)
Abdallah, J.; Abreu, P.; Adam, W.; Adzic, P.; Albrecht, T.; Alemany-Fernandez, R.; Allmendinger, T.; Allport, P. P.; Amaldi, U.; Amapane, N.; Amato, S.; Anashkin, E.; Andreazza, A.; Andringa, S.; Anjos, N.; Antilogus, P.; Apel, W.-D.; Arnoud, Y.; Ask, S.; Asman, B.; Augustin, J. E.; Augustinus, A.; Baillon, P.; Ballestrero, A.; Bambade, P.; Barbier, R.; Bardin, D.; Barker, G. J.; Baroncelli, A.; Battaglia, M.; Baubillier, M.; Becks, K.-H.; Begalli, M.; Behrmann, A.; Ben-Haim, E.; Benekos, N.; Benvenuti, A.; Berat, C.; Berggren, M.; Bertrand, D.; Besancon, M.; Besson, N.; Bloch, D.; Blom, M.; Bluj, M.; Bonesini, M.; Boonekamp, M.; Booth, P. S. L.; Borisov, G.; Botner, O.; Bouquet, B.; Bowcock, T. J. V.; Boyko, I.; Bracko, M.; Brenner, R.; Brodet, E.; Bruckman, P.; Brunet, J. M.; Buschbeck, B.; Buschmann, P.; Calvi, M.; Camporesi, T.; Canale, V.; Carena, F.; Castro, N.; Cavallo, F.; Chapkin, M.; Charpentier, Ph.; Checchia, P.; Chierici, R.; Chliapnikov, P.; Chudoba, J.; Chung, S. U.; Cieslik, K.; Collins, P.; Contri, R.; Cosme, G.; Cossutti, F.; Costa, M. J.; Crennell, D.; Cuevas, J.; D'Hondt, J.; da Silva, T.; da Silva, W.; Della Ricca, G.; de Angelis, A.; de Boer, W.; de Clercq, C.; de Lotto, B.; de Maria, N.; de Min, A.; de Paula, L.; di Ciaccio, L.; di Simone, A.; Doroba, K.; Drees, J.; Eigen, G.; Ekelof, T.; Ellert, M.; Elsing, M.; Espirito Santo, M. C.; Fanourakis, G.; Fassouliotis, D.; Feindt, M.; Fernandez, J.; Ferrer, A.; Ferro, F.; Flagmeyer, U.; Foeth, H.; Fokitis, E.; Fulda-Quenzer, F.; Fuster, J.; Gandelman, M.; Garcia, C.; Gavillet, Ph.; Gazis, E.; Gokieli, R.; Golob, B.; Gomez-Ceballos, G.; Goncalves, P.; Graziani, E.; Grosdidier, G.; Grzelak, K.; Guy, J.; Haag, C.; Hallgren, A.; Hamacher, K.; Hamilton, K.; Haug, S.; Hauler, F.; Hedberg, V.; Hennecke, M.; Hoffman, J.; Holmgren, S.-O.; Holt, P. J.; Houlden, M. A.; Jackson, J. N.; Jarlskog, G.; Jarry, P.; Jeans, D.; Johansson, E. K.; Jonsson, P.; Joram, C.; Jungermann, L.; Kapusta, F.; Katsanevas, S.; Katsoufis, E.; Kernel, G.; Kersevan, B. P.; Kerzel, U.; King, B. T.; Kjaer, N. J.; Kluit, P.; Kokkinias, P.; Kourkoumelis, C.; Kouznetsov, O.; Krumstein, Z.; Kucharczyk, M.; Lamsa, J.; Leder, G.; Ledroit, F.; Leinonen, L.; Leitner, R.; Lemonne, J.; Lepeltier, V.; Lesiak, T.; Liebig, W.; Liko, D.; Lipniacka, A.; Lopes, J. H.; Lopez, J. M.; Loukas, D.; Lutz, P.; Lyons, L.; MacNaughton, J.; Malek, A.; Maltezos, S.; Mandl, F.; Marco, J.; Marco, R.; Marechal, B.; Margoni, M.; Marin, J.-C.; Mariotti, C.; Markou, A.; Martinez-Rivero, C.; Masik, J.; Mastroyiannopoulos, N.; Matorras, F.; Matteuzzi, C.; Mazzucato, F.; Mazzucato, M.; Mc Nulty, R.; Meroni, C.; Migliore, E.; Mitaroff, W.; Mjoernmark, U.; Moa, T.; Moch, M.; Moenig, K.; Monge, R.; Montenegro, J.; Moraes, D.; Moreno, S.; Morettini, P.; Mueller, U.; Muenich, K.; Mulders, M.; Mundim, L.; Murray, W.; Muryn, B.; Myatt, G.; Myklebust, T.; Nassiakou, M.; Navarria, F.; Nawrocki, K.; Nemecek, S.; Nicolaidou, R.; Nikolenko, M.; Oblakowska-Mucha, A.; Obraztsov, V.; Oliveira, O.; Olshevski, A.; Onofre, A.; Orava, R.; Osterberg, K.; Ouraou, A.; Oyanguren, A.; Paganoni, M.; Paiano, S.; Palacios, J. P.; Palka, H.; Papadopoulou, Th. D.; Pape, L.; Parkes, C.; Parodi, F.; Parzefall, U.; Passeri, A.; Passon, O.; Peralta, L.; Perepelitsa, V.; Perrotta, A.; Petrolini, A.; Piedra, J.; Pieri, L.; Pierre, F.; Pimenta, M.; Piotto, E.; Podobnik, T.; Poireau, V.; Pol, M. E.; Polok, G.; Pozdniakov, V.; Pukhaeva, N.; Pullia, A.; Radojicic, D.; Rebecchi, P.; Rehn, J.; Reid, D.; Reinhardt, R.; Renton, P.; Richard, F.; Ridky, J.; Rivero, M.; Rodriguez, D.; Romero, A.; Ronchese, P.; Roudeau, P.; Rovelli, T.; Ruhlmann-Kleider, V.; Ryabtchikov, D.; Sadovsky, A.; Salmi, L.; Salt, J.; Sander, C.; Savoy-Navarro, A.; Schwickerath, U.; Sekulin, R.; Siebel, M.; Sisakian, A.; Smadja, G.; Smirnova, O.; Sokolov, A.; Sopczak, A.; Sosnowski, R.; Spassov, T.; Stanitzki, M.; Stocchi, A.; Strauss, J.; Stugu, B.; Szczekowski, M.; Szeptycka, M.; Szumlak, T.; Tabarelli, T.; Tegenfeldt, F.; Timmermans, J.; Tkatchev, L.; Tobin, M.; Todorovova, S.; Tome, B.; Tonazzo, A.; Tortosa, P.; Travnicek, P.; Treille, D.; Tristram, G.; Trochimczuk, M.; Troncon, C.; Turluer, M.-L.; Tyapkin, I. A.; Tyapkin, P.; Tzamarias, S.; Uvarov, V.; Valenti, G.; van Dam, P.; van Eldik, J.; van Remortel, N.; van Vulpen, I.; Vegni, G.; Veloso, F.; Venus, W.; Verdier, P.; Verzi, V.; Vilanova, D.; Vitale, L.; Vrba, V.; Wahlen, H.; Washbrook, A. J.; Weiser, C.; Wicke, D.; Wickens, J.; Wilkinson, G.; Winter, M.; Witek, M.; Yushchenko, O.; Zalewska, A.; Zalewski, P.; Zavrtanik, D.; Zhuravlov, V.; Zimin, N. I.; Zintchenko, A.; Zupan, M.
2011-02-01
Single top quark production via four-fermion contact interactions associated to flavour-changing neutral currents was searched for in data taken by the DELPHI detector at LEP2. The data were accumulated at centre-of-mass energies ranging from 189 to 209 GeV, with an integrated luminosity of 598.1 pb-1. No evidence for a signal was found. Limits on the energy scale Λ, were set for scalar-, vector- and tensor-like coupling scenarios.
The Phase Relations in the In 2O 3-Al 2ZnO 4-ZnO System at 1350°C
NASA Astrophysics Data System (ADS)
Nakamura, Masaki; Kimizuka, Noboru; Mohri, Takahiko; Isobe, Mitsumasa
1993-08-01
Phase relations in the In 2O 3-Al 2ZnO 4-ZnO system at 1350°C are determined by a classical quenching method. This system consists of In 2O 3, Al 2ZnO 4, ZnO, and homologous phases InAlO 3(ZnO) m ( m = 2, 3, …) having solid solutions with LuFeO 3(ZnO) m-type crystal structures. These solid solution ranges are as follows: In 1+ x1Al 1- x1O 3(ZnO) 2 ( x1 = 0.70)-In 1+ x2Al 1- x2O 3(ZnO) 2 ( x2 = 0.316-0.320), In 2O 3(ZnO) 3-In 1+ xAl 1- xO 3(ZnO) 3 ( x = 0.230), In 2O 3(ZnO) 4-In 1+ xAl 1- xO 3(ZnO) 4 ( x = 0.15-0.16), In 2O 3(ZnO) 5-In 1+ xAl 1- xO 3(ZnO) 5 ( x = 0.116-0.130), In 2O 3(ZnO) 6-In 1+ xAl 1- xO 3(ZnO) 6 ( x = 0.000-0.111), In 2O 3(ZnO) 7-In 1+ xAl 1- xO 3(ZnO) 7 ( x = 0.08), In 2O 3(ZnO) 8-In 1+ xAl 1- xO 3(ZnO) 8 ( x: undetermined), and In 2O 3(ZnO) m-InAlO 3(ZnO) m ( m = 9, 10, 11, 13, 15, 17, and 19). The space groups of these homologous phases belong to R3¯ m for m = odd or P6 3/ mmc for m = even. Their crystal structures, In 1+ xAl 1- xO 3(ZnO) m (0 < x < 1), consist of three kinds of layers: an InO 1.5 layer, an (In xAl 1- xZn)O 2.5 layer, and ZnO layers. A comparison of the phase relations in the In 2O 3- M2ZnO 4-ZnO systems ( M = Fe, Ga, or Al) is made and their characteristic features are discussed in terms of the ionic radii and site preferences of the M cations.
Noda, Kei; Wada, Yasuo; Toyabe, Toru
2015-10-28
Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.
Xiong, Dapeng; Zeng, Jianyang; Gong, Haipeng
2017-09-01
Residue-residue contacts are of great value for protein structure prediction, since contact information, especially from those long-range residue pairs, can significantly reduce the complexity of conformational sampling for protein structure prediction in practice. Despite progresses in the past decade on protein targets with abundant homologous sequences, accurate contact prediction for proteins with limited sequence information is still far from satisfaction. Methodologies for these hard targets still need further improvement. We presented a computational program DeepConPred, which includes a pipeline of two novel deep-learning-based methods (DeepCCon and DeepRCon) as well as a contact refinement step, to improve the prediction of long-range residue contacts from primary sequences. When compared with previous prediction approaches, our framework employed an effective scheme to identify optimal and important features for contact prediction, and was only trained with coevolutionary information derived from a limited number of homologous sequences to ensure robustness and usefulness for hard targets. Independent tests showed that 59.33%/49.97%, 64.39%/54.01% and 70.00%/59.81% of the top L/5, top L/10 and top 5 predictions were correct for CASP10/CASP11 proteins, respectively. In general, our algorithm ranked as one of the best methods for CASP targets. All source data and codes are available at http://166.111.152.91/Downloads.html . hgong@tsinghua.edu.cn or zengjy321@tsinghua.edu.cn. Supplementary data are available at Bioinformatics online. © The Author (2017). Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com
NASA Astrophysics Data System (ADS)
Singh, Satyendra Kumar; Hazra, Purnima
2017-04-01
In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300-433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300-800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier height are found to increase, whereas ideality factor is started decreasing. This phenomenon confirms that barrier inhomogeneities are present at the interface of ZnO/Si heterojunction, as a result of lattice constant and thermal coefficient mismatch between Si and ZnO. Therefore, a modified value of Richardson constant [33.06 Acm-2K-2] has been extracted from the temperature-dependent electrical characteristics after assuming the Gaussian distribution of special barrier height inhomogeneities across the Si/ZnO interface which is close to its theoretical value [32 Acm-2K-2]. This result indicates that regardless of presence of barrier height inmogeneities, ZnO/Si heterojunction diode still hasability to perform well in high temperature environment.
Buono, A.; Rutledge, A.T.
1978-01-01
This map depicts the approximate top of the rock that composes the Floridan aquifer. The contours represent the elevation of the top of the Floridan aquifer to mean sea level. Rock units recognized to be part of the Floridan aquifer are limestone and dolomite ranging from middle Eocene to early Miocene. They are Lake City Limestone, Avon Park Limestone, Ocala Limestone, Suwannee Limestone, and Tampa Limestone. In this report, the top of the Floridan aquifer is a limestone defined as the first consistent rock of early Miocene age or older below which occur no clay confining beds. Although the Hawthorn formation of middle Miocene is considered part of the Floridan aquifer when it is in direct hydrologic contact with lower lying rock units, it is not considered here because of a lack of detailed delineation of areas where contact exists. (Woodard-USGS)
Miniature pipe crawler tractor
DOE Office of Scientific and Technical Information (OSTI.GOV)
McKay, M.D.; Anderson, M.O.; Ferrante, T.A.
2000-03-14
A pipe crawler tractor may comprise a half tractor assembly having a first base drive wheel, a second base drive wheel, and a top drive wheel. The drive wheels are mounted in spaced-apart relation so that the top drive wheel is positioned between the first and second base drive wheels. The mounting arrangement is also such that the first and second base drive wheels contact the inside surface of the pipe at respective first and second positions and so that the top drive wheel contacts the inside surface of the pipe at a third position, the third position being substantiallymore » diametrically opposed to the first and second positions. A control system connected to the half tractor assembly controls the rotation of the first base wheel, the second base wheel, and the top drive wheel to move the half tractor assembly within the pipe.« less
NASA Astrophysics Data System (ADS)
Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V.; Pillai, Vijayamohanan K.
2014-07-01
Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers. Electronic supplementary information (ESI) available: See DOI: 10.1039/c3nr06917f
NASA Astrophysics Data System (ADS)
Capelli, Raffaella; Nardi, Marco Vittorio; Toccoli, Tullio; Verucchi, Roberto; Dinelli, Franco; Gelsomini, Carolina; Koshmak, Konstantin; Giglia, Angelo; Nannarone, Stefano; Pasquali, Luca
2018-01-01
Herein, we describe the use of soft X-ray reflectivity at the carbon K-edge to study the molecular organization (orientation, structure, and morphology) of pentacene active films in a top-contact transistor geometry. This technique is not affected by sample charging, and it can be applied in the case of insulating substrates. In addition, the sampling depth is not limited to the near-surface region, giving access to buried device interfaces (metal/organic and dielectric/organic). Spectral lineshape simulations, based on ab-initio calculations using a realistic 3D layer-by-layer model, allow us to unravel the details of the molecular organization in all the specific and crucial areas of the active film, overcoming the limitations of conventional approaches. The tilt angle of the long molecular axis in the whole film is found to progressively decrease with respect to the substrate normal from 25° to 0° with the increasing film thickness. A full vertical alignment, optimal for in-plane charge hopping, is reached only after the complete formation of the first five monolayers. Remarkably, starting from the first one in contact with the dielectric substrate, all the monolayers in the stack show a change in orientation with the increasing thickness. On the other hand, at the buried interface with a gold top-contact, the molecules assume a flat orientation that only propagates for two or three monolayers into the organic film. Top-contact devices with the highest performances can thus be obtained using films of at least ten monolayers. This explains the observed thickness dependence of charge mobility in pentacene transistors.
NASA Astrophysics Data System (ADS)
Fan, Lin; Wang, Fengyou; Liang, Junhui; Yao, Xin; Fang, Jia; Zhang, Dekun; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan
2017-01-01
A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device. Project supported by the International Cooperation Projects of the Ministry of Science and Technology (No. 2014DFE60170), the National Natural Science Foundation of China (Nos. 61474065, 61674084), the Tianjin Research Key Program of Application Foundation and Advanced Technology (No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province (No. BE2014147-3), and the 111 Project (No. B16027).
NASA Astrophysics Data System (ADS)
Zhang, Xiaodong; Chen, Long; Sun, Yangbo; Bai, Yu; Huang, Bisheng; Chen, Keli
2018-03-01
Near-infrared (NIR) spectroscopy has been widely used in the analysis fields of traditional Chinese medicine. It has the advantages of fast analysis, no damage to samples and no pollution. In this research, a fast quantitative model for zinc oxide (ZnO) content in mineral medicine calamine was explored based on NIR spectroscopy. NIR spectra of 57 batches of calamine samples were collected and the first derivative (FD) method was adopted for conducting spectral pretreatment. The content of ZnO in calamine sample was determined using ethylenediaminetetraacetic acid (EDTA) titration and taken as reference value of NIR spectroscopy. 57 batches of calamine samples were categorized into calibration and prediction set using the Kennard-Stone (K-S) algorithm. Firstly, in the calibration set, to calculate the correlation coefficient (r) between the absorbance value and the ZnO content of corresponding samples at each wave number. Next, according to the square correlation coefficient (r2) value to obtain the top 50 wave numbers to compose the characteristic spectral bands (4081.8-4096.3, 4188.9-4274.7, 4335.4, 4763.6,4794.4-4802.1, 4809.9, 4817.6-4875.4 cm- 1), which were used to establish the quantitative model of ZnO content using back propagation artificial neural network (BP-ANN) algorithm. Then, the 50 wave numbers were operated by the mean impact value (MIV) algorithm to choose wave numbers whose absolute value of MIV greater than or equal to 25, to obtain the optimal characteristic spectral bands (4875.4-4836.9, 4223.6-4080.9 cm- 1). And then, both internal cross and external validation were used to screen the number of hidden layer nodes of BP-ANN. Finally, the number 4 of hidden layer nodes was chosen as the best. At last, the BP-ANN model was found to enjoy a high accuracy and strong forecasting capacity for analyzing ZnO content in calamine samples ranging within 42.05-69.98%, with relative mean square error of cross validation (RMSECV) of 1.66% and coefficient of determination (R2) of 95.75% in internal cross and relative mean square error of prediction (RMSEP) of 1.98%, R2 of 97.94% and ratio of performance to deviation (RPD) of 6.11 in external validation.
New Materials for Chalcogenide Based Solar Cells
NASA Astrophysics Data System (ADS)
Tosun, Banu Selin
Thin film solar cells based on copper indium gallium diselenide (CIGS) have achieved efficiencies exceeding 20 %. The p-n junction in these solar cells is formed between a p-type CIGS absorber layer and a composite n-type film that consists of a 50-100 nm thin n-type CdS followed by a 50-200 nm thin n-type ZnO. This dissertation focuses on developing materials for replacing CdS and ZnO films to improve the damp-heat stability of the solar cells and for minimizing the use of Cd. Specifically, I demonstrate a new CIGS solar cell with better damp heat stability wherein the ZnO layer is replaced with SnO2. The efficiency of solar cells made with SnO2 decreased less than 5 % after 120 hours at 85 °C and 85 % relative humidity while the efficiency of solar cells made with ZnO declined by more than 70 %. Moreover, I showed that a SnO2 film deposited on top of completed CIGS solar cells significantly increased the device lifetime by forming a barrier against water diffusion. Semicrystalline SnO2 films deposited at room temperature had nanocrystals embedded in an amorphous matrix, which resulted in films without grain boundaries. These films exhibited better damp-heat stability than ZnO and crystalline SnO2 films deposited at higher temperature and this difference is attributed to the lack of grain boundary water diffusion. In addition, I studied CBD of Zn1-xCdxS from aqueous solutions of thiourea, ethylenediaminetetraacetic acid and zinc and cadmium sulfate. I demonstrated that films with varying composition (x) can be deposited through CBD and studied the structure and composition variation along the films' thickness. However, this traditional chemical bath deposition (CBD) approach heats the entire solution and wastes most of the chemicals by homogenous particle formation. To overcome this problem, I designed and developed a continuous-flow CBD approach to utilize the chemicals efficiently and to eliminate homogenous particle formation. Only the substrate is heated to the deposition temperature while the CBD solution is rapidly circulated between the bath and a chilled reservoir. We have demonstrated Zn1-x CdxS films for a variety of (x) values, with and without varying (x) across film thickness.
Di Mundo, Rosa; Bottiglione, Francesco; Palumbo, Fabio; Notarnicola, Michele; Carbone, Giuseppe
2016-11-15
Micro-scale textured Teflon surfaces, resulting from plasma etching modification, show extremely high water contact angle values and fairly good resistance to water penetration when hit by water drops at medium-high speed. This behavior is more pronounced when these surfaces present denser and smaller micrometric reliefs. Tailoring the top of these reliefs with a structure which further stabilizes the air may further increase resistance to wetting (water penetration) under static and dynamic conditions. Conditions of the oxygen fed plasma were tuned in order to explore the possibility of obtaining differently topped structures on the surface of the polymer. Scanning Electron Microscopy (SEM) was used to explore topography and X-ray Photoelectron Spectroscopy (XPS) to assess chemical similarity of the modified surfaces. Beside the usual advancing and receding water contact angle (WCA) measurements, surfaces were subjected to high speed impacting drops and immersion in water. At milder, i.e. shorter time and lower input power, plasma conditions formation of peculiar filaments is observed on the top of the sculpted reliefs. Filamentary topped surfaces result in a lower WCA than the spherical ones, appearing in this sense less superhydrophobic. However, these surfaces give rise to the formation of a more pronounced air layer when placed underwater. Further, when hit by water drops falling at medium/high speed, they show a higher resistance to water penetration and a sensitively lower surface-liquid contact time. The contact time is as low as previously observed only on heated solids. This behavior may be ascribed to the cavities formed beneath the filaments which, similarly with the salvinia leaf structures, require a surplus of pressure to be filled by water. Also, it suggests a different concept of superhydrophobicity, which cannot be expected on the basis of the conventional water contact angle characterization. Copyright © 2016 Elsevier Inc. All rights reserved.
ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping
Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.
2007-02-20
A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.
In situ biasing and off-axis electron holography of a ZnO nanowire
NASA Astrophysics Data System (ADS)
den Hertog, Martien; Donatini, Fabrice; McLeod, Robert; Monroy, Eva; Sartel, Corinne; Sallet, Vincent; Pernot, Julien
2018-01-01
Quantitative characterization of electrically active dopants and surface charges in nano-objects is challenging, since most characterization techniques using electrons [1-3], ions [4] or field ionization effects [5-7] study the chemical presence of dopants, which are not necessarily electrically active. We perform cathodoluminescence and voltage contrast experiments on a contacted and biased ZnO nanowire with a Schottky contact and measure the depletion length as a function of reverse bias. We compare these results with state-of-the-art off-axis electron holography in combination with electrical in situ biasing on the same nanowire. The extension of the depletion length under bias observed in scanning electron microscopy based techniques is unusual as it follows a linear rather than square root dependence, and is therefore difficult to model by bulk equations or finite element simulations. In contrast, the analysis of the axial depletion length observed by holography may be compared with three-dimensional simulations, which allows estimating an n-doping level of 1 × 1018 cm-3 and negative sidewall surface charge of 2.5 × 1012 cm-2 of the nanowire, resulting in a radial surface depletion to a depth of 36 nm. We found excellent agreement between the simulated diameter of the undepleted core and the active thickness observed in the experimental data. By combining TEM holography experiments and finite element simulation of the NW electrostatics, the bulk-like character of the nanowire core is revealed.
Yao, Yu-Feng; Lin, Chun-Han; Hsieh, Chieh; Su, Chia-Ying; Zhu, Erwin; Yang, Shaobo; Weng, Chi-Ming; Su, Ming-Yen; Tsai, Meng-Che; Wu, Shang-Syuan; Chen, Sheng-Hung; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C
2015-12-14
The combined effects of a few mechanisms for emission efficiency enhancement produced in the overgrowth of the transparent conductor layer of Ga-doped ZnO (GaZnO) on a surface Ag-nanoparticle (NP) coated light-emitting diode (LED), including surface plasmon (SP) coupling, current spreading, light extraction, and contact resistivity reduction, are demonstrated. With a relatively higher GaZnO growth temperature (350 °C), melted Ag NPs can be used as catalyst for forming GaZnO nanoneedles (NNs) through the vapor-liquid-solid growth mode such that light extraction efficiency can be increased. Meanwhile, residual Ag NPs are buried in a simultaneously grown GaZnO layer for inducing SP coupling. With a relatively lower GaZnO growth temperature (250 °C), all the Ag NPs are preserved for generating a stronger SP coupling effect. By using a thin annealed GaZnO interlayer on p-GaN before Ag NP fabrication, the contact resistivity at the GaZnO/p-GaN interface and hence the overall device resistance can be reduced. Although the use of this interlayer blue-shifts the localized surface plasmon resonance peak of the fabricated Ag NPs from the quantum well emission wavelength of the current study (535 nm) such that the SP coupling effect becomes weaker, it is useful for enhancing the SP coupling effect in an LED with a shorter emission wavelength.
A case for ZnO nanowire field emitter arrays in advanced x-ray source applications
NASA Astrophysics Data System (ADS)
Robinson, Vance S.; Bergkvist, Magnus; Chen, Daokun; Chen, Jun; Huang, Mengbing
2016-09-01
Reviewing current efforts in X-ray source miniaturization reveals a broad spectrum of applications: Portable and/or remote nondestructive evaluation, high throughput protein crystallography, invasive radiotherapy, monitoring fluid flow and particulate generation in situ, and portable radiography devices for battle-front or large scale disaster triage scenarios. For the most part, all of these applications are being addressed with a top-down approach aimed at improving portability, weight and size. That is, the existing system or a critical sub-component is shrunk in some manner in order to miniaturize the overall package. In parallel to top-down x-ray source miniaturization, more recent efforts leverage field emission and semiconductor device fabrication techniques to achieve small scale x-ray sources via a bottom-up approach where phenomena effective at a micro/nanoscale are coordinated for macro-scale effect. The bottom-up approach holds potential to address all the applications previously mentioned but its entitlement extends into new applications with much more ground-breaking potential. One such bottom-up application is the distributed x-ray source platform. In the medical space, using an array of microscale x-ray sources instead of a single source promises significant reductions in patient dose as well as smaller feature detectability and fewer image artifacts. Cold cathode field emitters are ideal for this application because they can be gated electrostatically or via photonic excitation, they do not generate excessive heat like other common electron emitters, they have higher brightness and they are relatively compact. This document describes how ZnO nanowire field emitter arrays are well suited for distributed x-ray source applications because they hold promise in each of the following critical areas: emission stability, simple scalable fabrication, performance, radiation resistance and photonic coupling.
Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gershon, Talia S.; Gunawan, Oki; Haight, Richard A.
A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.
Bottom-up meets top-down: tailored raspberry-like Fe 3 O 4 –Pt nanocrystal superlattices
Qiu, Fen; Vervuurt, René H. J.; Verheijen, Marcel A.; ...
2018-01-01
Bottom up colloidal synthesis is combined with top down atomic layer deposition to achieve raspberry-like Pt-decorated Fe 3 O 4 nanoparticle superlattices with good metal–oxide–metal contact for photoelectrocatalysis.
Bottom-up meets top-down: tailored raspberry-like Fe 3 O 4 –Pt nanocrystal superlattices
DOE Office of Scientific and Technical Information (OSTI.GOV)
Qiu, Fen; Vervuurt, René H. J.; Verheijen, Marcel A.
Bottom up colloidal synthesis is combined with top down atomic layer deposition to achieve raspberry-like Pt-decorated Fe 3 O 4 nanoparticle superlattices with good metal–oxide–metal contact for photoelectrocatalysis.
Elongated solid electrolyte cell configurations and flexible connections therefor
Reichner, P.
1989-10-17
A flexible, high temperature, solid oxide electrolyte electrochemical cell stack configuration is made, comprising a plurality of flattened, elongated, connected cell combinations, each cell combination containing an interior electrode having a top surface and a plurality of interior gas feed conduits, through its axial length, electrolyte contacting the interior electrode and exterior electrode contacting electrolyte, where a major portion of the air electrode top surface is covered by interconnection material, and where each cell has at least one axially elongated, electronically conductive, flexible, porous, metal fiber felt material in electronic connection with the air electrode through contact with a major portion of the interconnection material, the metal fiber felt being effective as a shock absorbent body between the cells. 4 figs.
Structural studies of ZnO nanostructures by varying the deposition parameters
NASA Astrophysics Data System (ADS)
Yunus, S. H. A.; Sahdan, M. Z.; Ichimura, M.; Supee, A.; Rahim, S.
2017-01-01
The effect of Zinc Oxide (ZnO) thin film on the growth of ZnO nanorods (NRs) was investigated. The structures of ZnO NRs were synthesized by chemical bath deposition (CBD) method in aqueous solution of N2O6Zn.6H2O and C6H12N4 at 90°C of deposition temperature. One of the ZnO NRs samples was deposited on a ZnO seed layer coated on a glass substrate to investigate the properties of ZnO NRs without receiving effect of other materials. Next, for diode application, the ZnO NRs was deposited on tin monosulfide (SnS) coated on indium-tin-oxide (ITO) coated glass substrate (SnS/ITO). The next, the ZnO structural properties were studied from surface morphology, X-ray diffractometer (XRD) spectra, and chemical composition by using field emission scanning electron microscope (FESEM), XRD and energy dispersive X-ray Spectroscopy (EDX). The growth of ZnO NRs on ZnO seed layer was investigated by ZnO seed layer condition while the growth of ZnO NRs on SnS/ITO was investigated by deposition time and deposition temperature parameters. From FESEM images, aligned ZnO NRs were obtained, and the diameters of ZnO NRs were 0.024-3.94 µm. The SnS thin film was affected by the diameter of ZnO NRs which are the ZnO NRs grow on SnS thin films has a larger diameter compared to ZnO NRs grow on ZnO seed layer. Besides that, all of ZnO peaks observed from XRD corresponding to the wurzite structure and preferentially oriented along the c-axis. In addition, EDX shows a high composition of zinc (Zn) and oxygen (O) signals, which indicated that the NRs are indeed made up of Zn and O.
Comparative study of textured and epitaxial ZnO films
NASA Astrophysics Data System (ADS)
Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.
2000-06-01
ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.
NASA Astrophysics Data System (ADS)
Brahma, Sanjaya; Liu, C.-W.; Huang, R.-J.; Chang, S.-J.; Lo, K.-Y.
2015-11-01
We demonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.
Contact-metal dependent current injection in pentacene thin-film transistors
NASA Astrophysics Data System (ADS)
Wang, S. D.; Minari, T.; Miyadera, T.; Tsukagoshi, K.; Aoyagi, Y.
2007-11-01
Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.
He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho
2017-06-16
In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g -1 at a scan rate of 20 mV s -1 , which is almost twice that of ZnO NWs (191.5 F g -1 ). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g -1 at a current density of 1.33 A g -1 with an energy density of 25.2 W h kg -1 at the power density of 896.44 W kg -1 . In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.
NASA Astrophysics Data System (ADS)
He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho
2017-06-01
In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.
Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S; Atif, Muhammad; Ansari, Anees A; Willander, Magnus
2013-09-30
In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.
Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S.; Atif, Muhammad; Ansari, Anees A.; Willander, Magnus
2013-01-01
In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices. PMID:28788336
Physically separating printed circuit boards with a resilient, conductive contact
NASA Technical Reports Server (NTRS)
Baker, John D. (Inventor); Montalvo, Alberto (Inventor)
1999-01-01
A multi-board module provides high density electronic packaging in which multiple printed circuit boards are stacked. Electrical power, or signals, are conducted between the boards through a resilient contact. One end of the contact is located at a via in the lower circuit board and soldered to a pad near the via. The top surface of the contact rests against a via of the facing printed circuit board.
Wang, Guangye; Huang, Wenjun; Song, Qi; Liang, Jinfeng
2017-11-01
This study aims to analyze the contact areas and pressure distributions between the femoral head and mortar during normal walking using a three-dimensional finite element model (3D-FEM). Computed tomography (CT) scanning technology and a computer image processing system were used to establish the 3D-FEM. The acetabular mortar model was used to simulate the pressures during 32 consecutive normal walking phases and the contact areas at different phases were calculated. The distribution of the pressure peak values during the 32 consecutive normal walking phases was bimodal, which reached the peak (4.2 Mpa) at the initial phase where the contact area was significantly higher than that at the stepping phase. The sites that always kept contact were concentrated on the acetabular top and leaned inwards, while the anterior and posterior acetabular horns had no pressure concentration. The pressure distributions of acetabular cartilage at different phases were significantly different, the zone of increased pressure at the support phase distributed at the acetabular top area, while that at the stepping phase distributed in the inside of acetabular cartilage. The zones of increased contact pressure and the distributions of acetabular contact areas had important significance towards clinical researches, and could indicate the inductive factors of acetabular osteoarthritis. Copyright © 2016. Published by Elsevier Taiwan.
Photoelectrochemical performance of NiO-coated ZnO-CdS core-shell photoanode
NASA Astrophysics Data System (ADS)
Iyengar, Pranit; Das, Chandan; Balasubramaniam, K. R.
2017-03-01
A nano-structured core-shell ZnO-CdS photoanode device with a mesoporous NiO co-catalyst layer was fabricated using solution-processing methods. The growth of the sparse ZnO nano-rod film with a thickness of ca. 930 nm was achieved by optimizing parameters such as the thickness of the ZnO seed layer, choice of Zn precursor salt and the salt concentration. CdS was then coated by a combination of spin coating and spin SILAR (Successive Ionic Layer Adsorption and Reaction) methods to completely fill the interspace of ZnO nano-rods. The uniform CdS surface facilitated the growth of a continuous mesoporous NiO layer. Upon illumination of 100 mW·cm-2 AM 1.5 G radiation the device exhibits stable photocurrents of 2.15 mA·cm-2 at 1.23 V and 0.92 mA·cm-2 at 0.00 V versus RHE, which are significantly higher as compared to the bare ZnO-CdS device. The excellent performance of the device can be ascribed to the higher visible region absorption by CdS, and effective separation of the photogenerated charge carriers due to the suitable band alignment and nanostructuring. Additionally, the mesoporous NiO overlayer offered a larger contact area with the electrolyte and promoted the kinetics enabling higher and stable photocurrent even till the 35th min. of testing.
Light tuning DC and AC electrical properties of ZnO-rGO based hybrid nanocomposite film
NASA Astrophysics Data System (ADS)
Nath, Debarati; Mandal, S. K.; Deb, Debajit; Rakshit, J. K.; Dey, P.; Roy, J. N.
2018-03-01
We have investigated the electrical and optoelectrical properties of a zinc oxide (ZnO):reduced graphene oxide (rGO) nanocomposite film prepared through the sol gel process on a glass substrate under dark and illumination conditions of light. The bandgap of the composite film is decreased from the pure ZnO nanofilm due to the formation of a Zn-O-C bond in the composite film. The linear behavior in the Current-Voltage curve is attributed to Ohmic contact between ZnO and rGO grains. The photocurrent of the composite film is found to increase with an increase in light intensity having two different slopes, indicating an enhancement of the mobility of carriers and dissociation rate of excitons. The observed decrement of the impedance value with the intensity of light may be due to the flow of charge carriers and the presence of the light dependent relaxation process in the system. Nyquist plots have been fitted using a parallel combination of grain boundary resistances and grain boundary capacitance at different intensities of light. The relaxation frequency is observed to shift towards the high frequency regime. Carrier transit time has been calculated from relaxation frequency showing opposite behavior with the intensity of light. These results indicate the higher generations of photogenerated carriers at the interface between rGO and ZnO grains and an enhancement of the charge transport process due to the increment of the mobility of charge carriers in the system.
Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung
2017-09-13
A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.
ZnO and ZnTiO3 nanopowders for antimicrobial stone coating
NASA Astrophysics Data System (ADS)
Ruffolo, S. A.; La Russa, M. F.; Malagodi, M.; Oliviero Rossi, C.; Palermo, A. M.; Crisci, G. M.
2010-09-01
In the past a great variety of biocidal compounds and persistent organic pesticides were applied on a large scale for preventive measures aimed at the long-term preservation of our cultural heritage. Only recently, public and expert attention has started to focus increasingly on the risks resulting from these treatments on human health, works of art and environment in general. The work done in this field demonstrated that the most effective way for inactivation can be achieved by using highly efficient photocatalysts with the illumination of UV radiation. Following this direction our group focused its attention on well-known photocatalysts, ZnO and ZnTiO3, in the degradation and complete mineralisation of environmental pollutants. This explorative work deals with an experimental investigation on biocidal efficient of ZnO and ZnTiO3. In particular micro-quantities of the two nanopowdered photocatalysts were spread on plated dishes. They were filled by the MEA (Malt Extract Agar) medium containing given quantities of Aspergillus Niger (a chromogen filamentous fungus involved in biodeterioration). At the same time the two oxides were dispersed in different polymeric matrices, acrylic and fluorinated, in order to obtain a new coating technology, with hydrophobic, consolidant and biocidal properties for the restoration of building stone material. The mixtures obtained were applied on marble samples and capillary water absorption, simulated solar ageing, colourimetric measurements and contact angle measurements have been performed to evaluate its properties.
ZnO transparent conductive oxide for thin film silicon solar cells
NASA Astrophysics Data System (ADS)
Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.
2010-03-01
There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.
Metal oxide semiconductors for dye degradation
DOE Office of Scientific and Technical Information (OSTI.GOV)
Adhikari, Sangeeta; Sarkar, Debasish, E-mail: dsarkar@nitrkl.ac.in
2015-12-15
Highlights: • Hydrothermal synthesis of monoclinic and hexagonal WO{sub 3} nanostructures. • Nanocuboid and nanofiber growth using different structure directing agents. • WO{sub 3}–ZnO nanocomposites for dye degradation under UV and visible light. • High photocatalytic efficiency is achieved by 10 wt% monoclinic WO{sub 3}. • WO{sub 3} assists to trap hole in UV and arrests electron in visible light irradiation. - Abstract: Organic contaminants are a growing threat to the environment that widely demands their degradation by high efficient photocatalysts. Thus, the proposed research work primely focuses on the efficient degradation of methyl orange using designed WO{sub 3}–ZnO photocatalystsmore » under both UV and visible light irradiation. Two different sets of WO{sub 3} nanostructures namely, monoclinic WO{sub 3} (m-WO{sub 3}) and hexagonal WO{sub 3} (h-WO{sub 3}) synthesizes in presence of a different structure directing agents. A specific dispersion technique allows the intimate contact of as-synthesized WO{sub 3} and ultra-violet active commercial ZnO photocatalyst in different weight variations. ZnO nanocrystal in presence of an optimum 10 wt% m-WO{sub 3} shows a high degree of photocatalytic activity under both UV and visible light irradiation compared to counterpart h-WO{sub 3}. Symmetrical monoclinic WO{sub 3} assists to trap hole in UV, but electron arresting mechanism predominates in visible irradiation. Coupling of monoclinic nanocuboid WO{sub 3} with ZnO proves to be a promising photocatalyst in both wavelengths.« less
Design and fabrication of metal-insulator-metal diode for high frequency applications
NASA Astrophysics Data System (ADS)
Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias
2017-02-01
Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.
NASA Astrophysics Data System (ADS)
Kim, Jong Min; Kim, Sung; Hwang, Sung Won; Kim, Chang Oh; Shin, Dong Hee; Kim, Ju Hwan; Jang, Chan Wook; Kang, Soo Seok; Hwang, Euyheon; Choi, Suk-Ho; El-Gohary, Sherif H.; Byun, Kyung Min
2018-02-01
Recently, we have demonstrated that excitation of plasmon-polaritons in a mechanically-derived graphene sheet on the top of a ZnO semiconductor considerably enhances its light emission efficiency. If this scheme is also applied to device structures, it is then expected that the energy efficiency of light-emitting diodes (LEDs) increases substantially and the commercial potential will be enormous. Here, we report that the plasmon-induced light coupling amplifies emitted light by ˜1.6 times in doped large-area chemical-vapor-deposition-grown graphene, which is useful for practical applications. This coupling behavior also appears in GaN-based LEDs. With AuCl3-doped graphene on Ga-doped ZnO films that is used as transparent conducting electrodes for the LEDs, the average electroluminescence intensity is 1.2-1.7 times enhanced depending on the injection current. The chemical doping of graphene may produce the inhomogeneity in charge densities (i.e., electron/hole puddles) or roughness, which can play a role as grating couplers, resulting in such strong plasmon-enhanced light amplification. Based on theoretical calculations, the plasmon-coupled behavior is rigorously explained and a method of controlling its resonance condition is proposed.
Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes
NASA Technical Reports Server (NTRS)
Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)
2013-01-01
A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.
Microwave synthesis and photocatalytic activities of ZnO bipods with different aspect ratios
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sun, Fazhe; Zhao, Zengdian; Qiao, Xueliang, E-mail: xuelqiao@163.com
2016-02-15
Highlights: • We synthesized linked ZnO nanorods by a facile microwave method. • The effect of reaction parameters on ZnO was investigated. • ZnO bipods with different aspect ratios were prepared. • The photocatalytic performance of ZnO bipods was evaluated. - Abstract: Linked ZnO nanorods have been successfully prepared via a facile microwave method without any post-synthesis treatment. The X-ray diffraction (XRD) patterns indicated the precursor had completely transformed into the pure ZnO crystal. The images of field emitting scanning electron microscope (FESEM) and transmission electron microscope (TEM) showed that linked ZnO nanorods consisted predominantly of ZnO bipods. The formationmore » process of the ZnO bipods was clearly discussed. ZnO bipods with different aspect ratios have been obtained by tuning the concentrations of reagents and microwave power. Moreover, the photocatalytic performance of ZnO bipods with different aspect ratios for degradation of methylene blue was systematically evaluated. The results of photocatalytic experiments showed that the photocatalytic activity increased with the aspect ratios of ZnO bipods increased. The reason is that ZnO bipods with larger aspect ratio have higher surface area, which can absorb more MB molecules to react with ·OH radicals.« less
Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.
Mirza, Misbah; Wang, Jiawei; Li, Dexing; Arabi, S Atika; Jiang, Chao
2014-04-23
We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.
Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods
NASA Astrophysics Data System (ADS)
Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.
2017-07-01
Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).
Fabrication and photovoltaic properties of ZnO nanorods/perovskite solar cells
DOE Office of Scientific and Technical Information (OSTI.GOV)
Shirahata, Yasuhiro; Tanaike, Kohei; Akiyama, Tsuyoshi
2016-02-01
ZnO nanorods/perovskite solar cells with different lengths of ZnO nanorods were fabricated. The ZnO nanorods were prepared by chemical bath deposition and directly confirmed to be hexagon-shaped nanorods. The lengths of the ZnO nanorads were controlled by deposition condition of ZnO seed layer. Photovoltaic properties of the ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} solar cells were investigated by measuring current density-voltage characteristics and incident photon to current conversion efficiency. The highest conversion efficiency was obtained in ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} with the longest ZnO nanorods.
NASA Astrophysics Data System (ADS)
Baek, Seung-Hye; Lee, Hyun-Jin; Lee, Sung-Nam
2018-06-01
We studied the thickness dependence of the crystallographic and optical properties of ZnO thin films grown on c-plane sapphire substrate using atomic layer deposition. High-resolution X-ray diffraction (HR-XRD) revealed two peaks at 34.5° and 36.2° in the initial growth stage of ZnO on the sapphire substrate, corresponding to the (002) and (101) ZnO planes, respectively. However, as the thickness of the ZnO film increased, the XRD intensity of the (002) ZnO peak increased drastically, compared with that of the (101) ZnO peak. This indicated that (002) and (101) ZnO were simultaneously grown on the c-plane sapphire substrate in the initial growth stage, and that (002) ZnO was predominantly grown with the increase in the thickness of ZnO film. The ZnO thin film presented an anisotropic surface structure at the initial stage, whereas the isotropic surface morphology was developed with an increase in the film thickness of ZnO. These observations were consistent with the HR-XRD results.
Top-gate organic depletion and inversion transistors with doped channel and injection contact
NASA Astrophysics Data System (ADS)
Liu, Xuhai; Kasemann, Daniel; Leo, Karl
2015-03-01
Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.
Theoretical study on the top- and enclosed-contacted single-layer MoS{sub 2} piezotronic transistors
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liu, Wei, E-mail: wliu@binn.cas.cn, E-mail: zlwang@gatech.edu; Zhou, Yongli; Zhang, Aihua
Recently, the piezotronic effect has been observed in two-dimensional single-layer MoS{sub 2} materials, which have potential applications in force and pressure triggered or controlled electronic devices, sensors, and human-machine interfaces. However, classical theory faces the difficulty in explaining the mechanism of the piezotronic effect for the top- and enclosed-contacted MoS{sub 2} transistors, since the piezoelectric charges are assumed to exist only at the edge of the MoS{sub 2} flake that is far from the electronic transport pathway. In the present study, we identify the piezoelectric charges at the MoS{sub 2}/metal-MoS{sub 2} interface by employing both the density functional theory andmore » finite element method simulations. This interface is on the transport pathway of both top- and enclosed-contacted MoS{sub 2} transistors, thus it is capable of controlling their transport properties. This study deepens the understanding of piezotronic effect and provides guidance for the design of two-dimensional piezotronic devices.« less
Challenges and opportunities of ZnO-related single crystalline heterostructures
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kozuka, Y.; Tsukazaki, A.; PRESTO, Japan Science and Technology Agency
2014-03-15
Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with Mg{sub x}Zn{sub 1-x}O. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such asmore » a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make Mg{sub x}Zn{sub 1-x}O as intrinsic as possible has opened the possibilities of making p-type Mg{sub x}Zn{sub 1-x}O through NH{sub 3} doping method. For the latter, conducting and transparent polymer films spin-coated on Mg{sub x}Zn{sub 1-x}O was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the Mg{sub x}Zn{sub 1-x}O/ZnO interfaces are promising candidate for quantum devices because of high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance.« less
NASA Astrophysics Data System (ADS)
Singh, Shubra; Thiyagarajan, P.; Mohan Kant, K.; Anita, D.; Thirupathiah, S.; Rama, N.; Tiwari, Brajesh; Kottaisamy, M.; Ramachandra Rao, M. S.
2007-10-01
ZnO is a unique material that offers about a dozen different application possibilities. In spite of the fact that the ZnO lattice is amenable to metal ion doping (3d and 4f), the physics of doping in ZnO is not completely understood. This paper presents a review of previous research works on ZnO and also highlights results of our research activities on ZnO. The review pertains to the work on Al and Mg doping for conductivity and band gap tuning in ZnO followed by a report on transition metal (TM) ion doped ZnO. This review also highlights the work on the transport and optical studies of TM ion doped ZnO, nanostructured growth (ZnO polycrystalline and thin films) by different methods and the formation of unique nano- and microstructures obtained by pulsed laser deposition and chemical methods. This is followed by results on ZnO encapsulated Fe3O4 nanoparticles that show promising trends suitable for various applications. We have also reviewed the non-linear characteristic studies of ZnO based heterostructures followed by an analysis on the work carried out on ZnO based phosphors, which include mainly the nanocrystalline ZnO encapsulated SiO2, a new class of phosphor that is suitable for white light emission.
Chemical manipulation of oxygen vacancy and antibacterial activity in ZnO.
V, Lakshmi Prasanna; Vijayaraghavan, Rajagopalan
2017-08-01
Pure and doped ZnO (cation and anion doping) compositions have been designed in order to manipulate oxygen vacancy and antibacterial activity of ZnO. In this connection, we have synthesized and characterized micron sized ZnO, N doped micron sized ZnO, nano ZnO, nano Na and La doped ZnO. The intrinsic vacancies in pure ZnO and the vacancies created by N and Na doping in ZnO have been confirmed by X-ray Photoelectron Spectroscopy(XPS) and Photoluminiscence Spectroscopy(PL). Reactive oxygen species (ROS) such as hydroxyl radicals, superoxide radicals and H 2 O 2 responsible for antibacterial activity have been estimated by PL, UV-Vis spectroscopy and KMnO 4 titrations respectively. It was found that nano Na doped ZnO releases highest amount of ROS followed by nano ZnO, micron N doped ZnO while micron ZnO releases the least amount of ROS. The concentration of vacancies follows the same sequence. This illustrates directly the correlation between ROS and oxygen vacancy in well designed pure and doped ZnO. For the first time, material design in terms of cation doping and anion doping to tune oxygen vacancies has been carried out. Interaction energy (E g ), between the bacteria and nanoparticles has been calculated based on Extended Derjaguin-Landau-Verwey-Overbeek (EDLVO) theory and is correlated with antibacterial activity. Copyright © 2017 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Li, Jin; Bi, Xiaofang
2016-07-01
Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.
Elongated solid electrolyte cell configurations and flexible connections therefor
Reichner, Philip
1989-01-01
A flexible, high temperature, solid oxide electrolyte electrochemical cell stack configuration is made, comprising a plurality of flattened, elongated, connected cell combinations 1, each cell combination containing an interior electrode 2 having a top surface and a plurality of interior gas feed conduits 3, through its axial length, electrolyte 5 contacting the interior electrode and exterior electrode 8 contacting electrolyte, where a major portion of the air electrode top surface 7 is covered by interconnection material 6, and where each cell has at least one axially elongated, electronically conductive, flexible, porous, metal fiber felt material 9 in electronic connection with the air electrode 2 through contact with a major portion of the interconnection material 6, the metal fiber felt being effective as a shock absorbent body between the cells.
NASA Astrophysics Data System (ADS)
Kaur, Simranjeet; Kaur, Harpreet
2018-05-01
The present work reports the electrochemical synthesis of polysaccharide-functionalized ZnO nanoparticles using sodium hydroxide, starch, and zinc electrodes for the degradation of cationic dye (Rhodamine-B) under sunlight. Physiochemical properties of synthesized sample have been characterized by different techniques such as XRD, TEM, FESEM, EDS, IR, and UV-visible spectroscopic techniques. The influence of various factors such as effect of dye concentration, contact time, amount of photocatalyst, and pH has been studied. The results obtained from the photodegradation study showed that degradation rate of Rhodamine-B dye has been increased with increase of amount of photocatalyst and decreased with increase in initial dye concentration. Furthermore, the kinetics of the degradation has been investigated. It has been found that the photodegradation of Rhodamine-B dye follows pseudo-first-order kinetics and prepared photocatalyst can effectively degrade the cationic dye. Thus, this ecofriendly and efficient photocatalyst can be used for the treatment of dye-contaminated water. This catalyst also showed the antibacterial activity against Bacillus pumilus and Escherichia coli bacterial strains, so the synthesized nanoparticles also have the pharmaceutical properties.
Donatini, F; de Luna Bugallo, Andres; Tchoulfian, Pierre; Chicot, Gauthier; Sartel, Corinne; Sallet, Vincent; Pernot, Julien
2016-05-11
Whereas nanowire (NW)-based devices offer numerous advantages compared to bulk ones, their performances are frequently limited by an incomplete understanding of their properties where surface effect should be carefully considered. Here, we demonstrate the ability to spatially map the electric field and determine the exciton diffusion length in NW by using an electron beam as the single excitation source. This approach is performed on numerous single ZnO NW Schottky diodes whose NW radius vary from 42.5 to 175 nm. The dominant impact of the surface on the NW properties is revealed through the comparison of three different physical quantities recorded on the same NW: electron-beam induced current, cathodoluminescence, and secondary electron signal. Indeed, the space charge region near the Schottky contact exhibits an unusual linear variation with reverse bias whatever the NW radius. On the contrary, the exciton diffusion length is shown to be controlled by the NW radius through surface recombination. This systematic comparison performed on a single ZnO NW demonstrates the power of these complementary techniques in understanding NW properties.
Influence of carbon content on photocatalytic performance of C@ZnO hollow nanospheres
NASA Astrophysics Data System (ADS)
Jin, Changqing; Zhu, Kexin; Jian, Zengyun; Wei, Yongxing; Gao, Ling; Zhang, Zhihong; Zheng, Deshan
2018-02-01
Mesoporous C@ZnO hollow spheres were successfully synthesized through a carbon-sphere template combined hydrothermal method. The photocatalytic activities of the samples to rhodamine B (RhB) were investigated, and the sample of 3 wt% carbon has the best photocatalytic activity to RhB. The excellent photocatalytic performance could come from both enhanced photogenerated electron-hole pair separation, and the larger specific surface area induced by mesoporous hollow nanostructure. The photocatalytic performance sensitively depends upon content of amorphous carbon. Too much or too little carbon content decreases sample performance. The changes in performance according to carbon content are probably a result of the competing mechanism: the increasing rate of separation efficiency of photogenerated carriers and the decreasing contact area of ZnO with RhB according to the carbon content. This work would help us to better understand the important roles of carbon content in the fabricated nano-heterojunctions and also provide us with a feasible route to improve UV photocatalytic activities of ZnO and other metal oxides greatly.
NASA Astrophysics Data System (ADS)
Kim, Bit-Na; Kim, Hyeong Jun; Chang, Hyo Sik; Hong, Hyun Seon; Ryu, Sung-Soo; Lee, Heon
2013-10-01
In this study, eco-friendly Pb-free Bi2O3-B2O3-ZnO glass frits were chosen as an inorganic additive for the Al paste used in Si solar cells. The effects of the molar ratio of Bi2O3 to B2O3 in the glass composition on the electrical resistance of the Al electrode and on the cell performance were investigated. The results showed that as the molar ratio of Bi2O3 to B2O3 increased, the glass transition temperature and softening temperature decreased because of the reduced glass viscosity. In Al screen-printed Si solar cells, as the molar ratio of Bi2O3 to B2O3 increased, the sheet electrical resistance of the Al electrode decreased and the cell efficiency increased. The uniformity and thickness of the back-surface field was significantly influenced by the glass composition.
Analyzing ZnO clusters through the density-functional theory.
Zaragoza, Irineo-Pedro; Soriano-Agueda, Luis-Antonio; Hernández-Esparza, Raymundo; Vargas, Rubicelia; Garza, Jorge
2018-06-16
The potential energy surface of Zn n O n clusters (n = 2, 4, 6, 8) has been explored by using a simulated annealing method. For n = 2, 4, and 6, the CCSD(T)/TZP method was used as the reference, and from here it is shown that the M06-2X/TZP method gives the lowest deviations over PBE, PBE0, B3LYP, M06, and MP2 methods. Thus, with the M06-2X method we predict isomers of Zn n O n clusters, which coincide with some isomers reported previously. By using the atoms in molecules analysis, possible contacts between Zn and O atoms were found for all structures studied in this article. The bond paths involved in several clusters suggest that Zn n O n clusters can be obtained from the zincite (ZnO crystal), such an observation was confirmed for clusters with n = 2 - 9,18 and 20. The structure with n = 23 was obtained by the procedure presented here, from crystal information, which could be important to confirm experimental data delivered for n = 18 and 23.
NASA Astrophysics Data System (ADS)
Nimmy John, V.; Varanakkottu, Subramanyan Namboodiri; Varghese, Soney
2018-06-01
Flexible polymer dispersed liquid crystal (F-PDLC) devices were fabricated using transparent conducting ITO/PET film. Polymerization induced phase separation (PIPS) method was used for pure and ferroelectric BaTiO3 (BTO) and ZnO doped PDLC devices. The distribution of nanoparticles in the PDLC and the formation of micro cavities were studied using field emission scanning electron microscopy (FESEM). It was observed that the addition of ferroelectric BTO nanoparticles has reduced the threshold voltage (Vth) and saturation voltage (Vsat) of FNP-PDLC by 85% and 41% respectively due to the spontaneous polarization of ferroelectric nanoparticles. The ferroelectric properties of BTO and ZnO in the fabricated devices were investigated using dynamic contact electrostatic force microscopy (DC EFM). Flexing the device can generate a potential due to the piezo-tribo electric effect of the ferroelectric nanomaterial doped in the PDLC matrix, which could be utilized as an energy generating system. The switching voltage after multiple flexing was also studied and found to be in par with non-flexing situations.
Cheng, V C C; Chau, P H; Lee, W M; Ho, S K Y; Lee, D W Y; So, S Y C; Wong, S C Y; Tai, J W M; Yuen, K Y
2015-07-01
Unlike direct contact with patients' body, hand hygiene practice is often neglected by healthcare workers (HCWs) and visitors after contact with patients' environment. Contact with hospital environmental items may increase risk of pathogen transmission. To enumerate the number of hand-touch contacts by patients, HCWs and visitors with any hospital environmental items. All contact-episodes between person and item were recorded by direct observation in a six-bed cubicle of acute wards for 33 working days. High-touch and mutual-touch items with high contact frequencies by HCWs, patients, and visitors were analysed. In total, 1107 person-episodes with 6144 contact-episodes were observed in 66 observation hours (average: 16.8 person-episodes and 93.1 contact-episodes per hour). Eight of the top 10 high-touch items, including bedside rails, bedside tables, patients' bodies, patients' files, linen, bed curtains, bed frames, and lockers were mutually touched by HCWs, patients, and visitors. Bedside rails topped the list with 13.6 contact-episodes per hour (mean), followed by bedside tables (12.3 contact-episodes per hour). Using patients' body contacts as a reference, it was found that medical staff and nursing staff contacted bedside tables [rate ratio (RR): 1.741, 1.427, respectively] and patients' files (RR: 1.358, 1.324, respectively) more than patients' bodies, and nursing staff also contacted bedside rails (RR: 1.490) more than patients' bodies. Patients' surroundings may be links in the transmission of nosocomial infections because many are frequently touched and mutually contacted by HCWs, patients, and visitors. Therefore, the focus of hand hygiene education, environmental disinfection, and other system changes should be enhanced with respect to high-touch and mutual-touch items. Copyright © 2015 The Healthcare Infection Society. Published by Elsevier Ltd. All rights reserved.
Zhang, Lingling; Li, Yu; Liu, Xiaoming; Zhao, Lihua; Ding, Yulong; Povey, Malcolm; Cang, Daqiang
2013-08-01
This work investigates the disinfection property of ZnO nanofluids, focusing on H2O2 production and the disinfection activities of ZnO suspensions with different particles/aggregates. The possible disinfection mechanisms of ZnO suspensions are analysed. In this work, a medium mill was used to produce ZnO suspensions with different sizes of particles/aggregates. During the milling process, five ZnO suspension samples (A-E) were produced. X-ray Diffraction (XRD) and Dynamic Light Scattering (DLS) analyses revealed that after milling, the size of ZnO particles/aggregates in the suspensions decreased. Disinfection tests, H2O2 detection assays and fluorescent analyses were used to explore the disinfection activities and mechanism of ZnO suspensions. Disinfection tests results showed that all the produced ZnO suspension exhibited disinfection activity against Escherichia coli. ZnO suspensions with smaller particles/aggregates showed better disinfection activities. The presence of H2O2 in ZnO suspension was analysed. The H2O2 detection assay suggested that there is 1 μM H2O2 in 0.2 g/l ZnO Sample A, while there was no H2O2 present in ZnO Sample E. Though results showed that there was no H2O2 present in ZnO Sample E, Sample E with a size of 93 nm showed the best disinfection activities. Fluorescence tests detected that the interaction between E. coli lipid vesicles and ZnO Sample E was much faster and more efficient. This study firstly demonstrated that ZnO suspensions with different particles/aggregates produced different amount of H2O2. Results suggested that H2O2 is responsible for the disinfection activity of larger ZnO particles/aggregates while the interaction between smaller ZnO particles/aggregates and vesicle lipids is responsible for the disinfection activity of smaller ZnO particles/aggregates. Crown Copyright © 2013. Published by Elsevier Ltd. All rights reserved.
Poynton, Helen C; Lazorchak, James M; Impellitteri, Christopher A; Smith, Mark E; Rogers, Kim; Patra, Manomita; Hammer, Katherine A; Allen, H Joel; Vulpe, Chris D
2011-01-15
Zinc oxide nanoparticles (ZnO NPs) are being rapidly developed for use in consumer products, wastewater treatment, and chemotherapy providing several possible routes for ZnO NP exposure to humans and aquatic organisms. Recent studies have shown that ZnO NPs undergo rapid dissolution to Zn(2+), but the relative contribution of Zn(2+) to ZnO NP bioavailability and toxicity is not clear. We show that a fraction of the ZnO NPs in suspension dissolves, and this fraction cannot account for the toxicity of the ZnO NP suspensions to Daphnia magna. Gene expression profiling of D. magna exposed to ZnO NPs or ZnSO(4) at sublethal concentrations revealed distinct modes of toxicity. There was also little overlap in gene expression between ZnO NPs and SiO(x) NPs, suggesting specificity for the ZnO NP expression profile. ZnO NPs effected expression of genes involved in cytoskeletal transport, cellular respiration, and reproduction. A specific pattern of differential expression of three biomarker genes including a multicystatin, ferritin, and C1q containing gene were confirmed for ZnO NP exposure and provide a suite of biomarkers for identifying environmental exposure to ZnO NPs and differentiating between NP and ionic exposure.
Gd{sup 3+} incorporated ZnO nanoparticles: A versatile material
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kumar, Surender, E-mail: surender40@gmail.com; Sahare, P.D.
Graphical abstract: - Highlights: • Chemically synthesized Gd{sup 3+} doped ZnO nanoparticles. • The broad visible emission of the ZnO is dependent on the surface defects and can be tailored by Gd{sup 3+} doing. • PL and magnetic properties are modified by Gd{sup 3+} doping. • Photocatalysis experiment reveals that the ZnO: Gd{sup 3+} degrades the Rh B dye faster than the undoped ZnO. - Abstract: Gd{sup 3+} doped ZnO nanoparticles are synthesized by wet chemical route method and investigated through structural, optical, magnetic and photocatalytic properties. Transmission Electron Microscopy technique has been performed on undoped and Gd{sup 3+} dopedmore » ZnO nanoparticles. X-ray diffraction, X-ray photoelectron spectroscopy and Raman analyses are carried out in order to examine the desired phase formation and substitution of Gd{sup 3+} in the ZnO matrix. Gd{sup 3+} doped ZnO nanoparticles show enhanced photoluminescent and ferromagnetic properties as compared to undoped ZnO. The broad visible emission of ZnO is found to be largely dependent on the surface defects and these surface defects can be tailored by Gd{sup 3+} doping concentration. Furthermore, Gd{sup 3+} doped ZnO nanoparticles also show improved photocatalytic properties as compared with undoped ZnO nanoparticles under ultraviolet irradiation.« less
Tae Lim, Jong; Lee, Hyunkoo; Cho, Hyunsu; Kwon, Byoung-Hwa; Sung Cho, Nam; Kuk Lee, Bong; Park, Jonghyurk; Kim, Jaesu; Han, Jun-Han; Yang, Jong-Heon; Yu, Byoung-Gon; Hwang, Chi-Sun; Chu Lim, Seong; Lee, Jeong-Ik
2015-01-01
Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device. Here, a multilayered graphene (MLG) as a top electrode is successfully implanted, via dry bonding, onto the top organic layer of transparent OLED (TOLED) with flexion patterns. The performance of the TOLED with MLG electrode is comparable to that of a conventional TOLED with a semi-transparent thin-Ag top electrode, because the MLG electrode makes a contact with the TOLED with no residue. In addition, we successfully fabricate a large-size transparent segment panel using the developed MLG electrode. Therefore, we believe that the flexion bonding technology presented in this work is applicable to various optoelectronic devices. PMID:26626439
In-vitro antibacterial study of zinc oxide nanostructures on Streptococcus sobrinus
NASA Astrophysics Data System (ADS)
Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo; Sirelkhatim, Amna; Hasan, Habsah; Mohamad, Dasmawati; Masudi, Sam'an Malik; Seeni, Azman; Rahman, Rosliza Abd
2014-10-01
Zinc oxide nanostructures were prepared using a pilot plant of zinc oxide boiling furnace. Generally, it produced two types of nanostructures different in morphology; one is rod-like shaped (ZnO-1) and a plate-like shape (ZnO-2). The properties of ZnO were studied by structural, optical and morphological using XRD, PL and FESEM respectively. The XRD patterns confirmed the wurtzite structures of ZnO with the calculated crystallite size of 41 nm (ZnO-1) and 42 nm (ZnO-2) using Scherrer formula. The NBE peaks were determined by photoluminescence spectra which reveal peak at 3.25 eV and 3.23 eV for ZnO-1 and ZnO-2 respectively. Prior to that, the morphologies for both ZnO-1 and ZnO-2 were demonstrated from FESEM micrographs. Subsequently the antibacterial study was conducted using in-vitro broth dilution technique towards a gram positive bacterium Streptococcus sobrinus (ATCC 33478) to investigate the level of antibacterial effect of zinc oxide nanostructures as antibacterial agent. Gradual increment of ZnO concentrations from 10-20 mM affected the inhibition level after twenty four hours of incubation. In conjunction with concentration increment of ZnO, the percentage inhibition towards Streptococcus sobrinus was also increased accordingly. The highest inhibition occurred at 20 mM of ZnO-1 and ZnO-2 for 98% and 77% respectively. It showed that ZnO has good properties as antibacterial agent and relevancy with data presented by XRD, PL and FESEM were determined.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo
Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al contentmore » in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Vlazan, P.; Ursu, D.H.; Irina-Moisescu, C.
TiO{sub 2}/ZnO core–shell nanoparticles were successfully synthesized by hydrothermal method in two stages: first stage is the hydrothermal synthesis of ZnO nanoparticles and second stage the obtained ZnO nanoparticles are encapsulated in TiO{sub 2}. The obtained ZnO, TiO{sub 2} and TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of X-ray diffraction, transmission electron microscopy, Brunauer, Emmett, Teller and resistance measurements. X-ray diffraction analysis revealed the presence of both, TiO{sub 2} and ZnO phases in TiO{sub 2}/ZnO core–shell nanoparticles. According to transmission electron microscopy images, ZnO nanoparticles have hexagonal shapes, TiO{sub 2} nanoparticles have a spherical shape, and TiO{sub 2}/ZnO core–shellmore » nanoparticles present agglomerates and the shape of particles is not well defined. The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about 101 meV. - Graphical abstract: Display Omitted - Highlights: • TiO{sub 2}/ZnO core–shell nanoparticles were synthesized by hydrothermal method. • TiO{sub 2}/ZnO core–shell nanoparticles were investigated by means of XRD, TEM and BET. • Electrical properties of TiO{sub 2}/ZnO core–shell nanoparticles were investigated. • The activation energy of TiO{sub 2}/ZnO core–shell nanoparticles was about E{sub a} = 101 meV.« less
Nuclear reactor containment structure with continuous ring tunnel at grade
Seidensticker, Ralph W.; Knawa, Robert L.; Cerutti, Bernard C.; Snyder, Charles R.; Husen, William C.; Coyer, Robert G.
1977-01-01
A nuclear reactor containment structure which includes a reinforced concrete shell, a hemispherical top dome, a steel liner, and a reinforced-concrete base slab supporting the concrete shell is constructed with a substantial proportion thereof below grade in an excavation made in solid rock with the concrete poured in contact with the rock and also includes a continuous, hollow, reinforced-concrete ring tunnel surrounding the concrete shell with its top at grade level, with one wall integral with the reinforced concrete shell, and with at least the base of the ring tunnel poured in contact with the rock.
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
NASA Astrophysics Data System (ADS)
Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth
2017-05-01
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.
NASA Astrophysics Data System (ADS)
Sabino, Fernando P.; Oliveira, Luiz N.; Wei, Su-Huai; Da Silva, Juarez L. F.
2018-02-01
Transparent conducting oxides such as the bixbyite In2O3 and rutile SnO2 systems have large disparities between the optical and fundamental bandgaps, ΔEgO F , because selection rules forbid dipolar transitions from the top of the valence band to the conduction-band minimum; however, the optical gaps of multi-cation compounds with the same chemical species often coincide with their fundamental gaps. To explain this conundrum, we have employed density-functional theory to compute the optical properties of multi-cation compounds, In2ZnO4 and In4Sn3O12, in several crystal structures. We show that a recently proposed mechanism to explain the disparity between the optical and fundamental gaps of M2O3 (M = Al, Ga, and In) applies also to other binary systems and to multi-compounds. Namely, a gap disparity will arise if the following three conditions are satisfied: (i) the crystal structure has inversion symmetry; (ii) the conduction-band minimum is formed by the cation and O s-orbitals; and (iii) there is strong p-d coupling and weak p-p in the vicinity of the valence-band maximum. The third property depends critically on the cationic chemical species. In the structures with inversion symmetry, Zn (Sn) strengthens (weakens) the p-d coupling in In2ZnO4 (In4Sn3O12), enhancing (reducing) the gap disparity. Furthermore, we have also identified a In4Sn3O12 structure that is 31.80 meV per formula unit more stable than a recently proposed alternative model.
Hultqvist, Adam; Aitola, Kerttu; Sveinbjörnsson, Kári; Saki, Zahra; Larsson, Fredrik; Törndahl, Tobias; Johansson, Erik; Boschloo, Gerrit; Edoff, Marika
2017-09-06
The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH 2 ) 2 , CH 3 NH 3 )Pb(I,Br) 3 (FAPbI 3 :MAPbBr 3 ) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnO x . Exposing the samples to the heat, the vacuum, and even the counter reactant of H 2 O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C 2 H 5 ) 2 either by itself or in combination with H 2 O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI 2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH 3 ) 2 ) 4 does not seem to degrade the bulk of the perovskite film, and conformal SnO x films can successfully be grown on top of it using atomic layer deposition. Using this SnO x film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C 70 -butyric acid methyl ester. However, the devices with SnO x show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnO x films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnO x interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnO x growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.
NASA Astrophysics Data System (ADS)
MacDonald, Gordon Alex
This dissertation focuses on characterizing the nanoscale and surface averaged electrical properties of transparent conducting oxide electrodes such as indium tin oxide (ITO) and transparent metal-oxide (MO) electron selective interlayers (ESLs), such as zinc oxide (ZnO), the ability of these materials to rapidly extract photogenerated charges from organic semiconductors (OSCs) used in organic photovoltaic (OPV) cells, and evaluating their impact on the power conversion efficiency (PCE) of OPV devices. In Chapter 1, we will introduce the fundamental principles, benefits, and the key innovations that have advanced this technology. In Chapter 2 of this dissertation, we demonstrate an innovative application of conductive probe atomic force microscopy (CAFM) to map the nanoscale electrical heterogeneity at the interface between ITO, and a well-studied OSC, copper phthalocyanine (CuPc).(MacDonald et al. (2012) ACS Nano, 6, p. 9623) In this work we collected arrays of current-voltage (J-V) curves, using a CAFM probe as the top contact of CuPc/ITO systems, to map the local J-V responses. By comparing J-V responses to known models for charge transport, we were able to determine if the local rate-limiting-step for charge transport is through the OSC (ohmic) or the CuPc/ITO interface (non-ohmic). Chapter 3 focus on the electrical property characterization of RF-magnetron sputtered ZnO (sp-ZnO) ESL films on ITO substrates. We have shown that the energetic alignment of ESLs and the OSC active materials plays a critical role in determining the PCE of OPV devices and UV light soaking sensitivity. We have used a combination of device testing, modeling, and impedance spectroscopy to characterize the effects that energetic alignment has on the charge carrier transport and distribution within the OPV device. In Chapter 4 we demonstrate that the local properties of sp-ZnO films varies as a function of the underlying ITO crystal face. We show that the local ITO crystal face determines the local nucleation and growth of the sp-ZnO films and, in turn, affects the nanoscale distribution of electrical and chemical properties. These studies have contributed to a detailed understanding of the role that electrical heterogeneity, insulating barriers and energetic alignment at MO/OSC interfaces play in OPV PCE.
Enhanced ultraviolet photo-response in Dy doped ZnO thin film
NASA Astrophysics Data System (ADS)
Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.
2018-02-01
In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.
2009-01-01
Background Engineered nanoparticles are becoming increasingly ubiquitous and their toxicological effects on human health, as well as on the ecosystem, have become a concern. Since initial contact with nanoparticles occurs at the epithelium in the lungs (or skin, or eyes), in vitro cell studies with nanoparticles require dose-controlled systems for delivery of nanoparticles to epithelial cells cultured at the air-liquid interface. Results A novel air-liquid interface cell exposure system (ALICE) for nanoparticles in liquids is presented and validated. The ALICE generates a dense cloud of droplets with a vibrating membrane nebulizer and utilizes combined cloud settling and single particle sedimentation for fast (~10 min; entire exposure), repeatable (<12%), low-stress and efficient delivery of nanoparticles, or dissolved substances, to cells cultured at the air-liquid interface. Validation with various types of nanoparticles (Au, ZnO and carbon black nanoparticles) and solutes (such as NaCl) showed that the ALICE provided spatially uniform deposition (<1.6% variability) and had no adverse effect on the viability of a widely used alveolar human epithelial-like cell line (A549). The cell deposited dose can be controlled with a quartz crystal microbalance (QCM) over a dynamic range of at least 0.02-200 μg/cm2. The cell-specific deposition efficiency is currently limited to 0.072 (7.2% for two commercially available 6-er transwell plates), but a deposition efficiency of up to 0.57 (57%) is possible for better cell coverage of the exposure chamber. Dose-response measurements with ZnO nanoparticles (0.3-8.5 μg/cm2) showed significant differences in mRNA expression of pro-inflammatory (IL-8) and oxidative stress (HO-1) markers when comparing submerged and air-liquid interface exposures. Both exposure methods showed no cellular response below 1 μg/cm2 ZnO, which indicates that ZnO nanoparticles are not toxic at occupationally allowed exposure levels. Conclusion The ALICE is a useful tool for dose-controlled nanoparticle (or solute) exposure of cells at the air-liquid interface. Significant differences between cellular response after ZnO nanoparticle exposure under submerged and air-liquid interface conditions suggest that pharmaceutical and toxicological studies with inhaled (nano-)particles should be performed under the more realistic air-liquid interface, rather than submerged cell conditions. PMID:20015351
NASA Astrophysics Data System (ADS)
Yadav, L. S. Reddy; Archana, B.; Lingaraju, K.; Kavitha, C.; Suresh, D.; Nagabhushana, H.; Nagaraju, G.
2016-05-01
In this paper, we have successfully synthesized ZnO nanoparticles (Nps) via solution combustion method using sugarcane juice as the novel fuel. The structure and morphology of the synthesized ZnO Nps have been analyzed using various analytical tools. The synthesized ZnO Nps exhibit excellent photocatalytic activity for the degradation of methylene blue dye, indicating that the ZnO Nps are potential photocatalytic semiconductor materials. The synthesized ZnO Nps also show good electrochemical sensing of dopamine. ZnO Nps exhibit significant bactericidal activity against Klebsiella aerogenes, Pseudomonas aeruginosa, Eschesichia coli and Staphylococcus aureus using agar well diffusion method. Furthermore, the ZnO Nps show good antioxidant activity by potentially scavenging 1-diphenyl-2-picrylhydrazyl (DPPH) radicals. The above studies clearly demonstrate versatile applications of ZnO synthesized by simple eco-friendly route.
Yim, Kwang Gug; Kim, Min Su; Leem, Jae-Young
2013-05-01
ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees C for 20 min under an Ar atmosphere. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out at room temperature (RT) to investigate the structural and optical properties of the as-grown and annealed ZnO nanostructures. The surface morphologies of the seed layers changed from a smooth surface to a mountain chain-like structure as the post-heating temperatures increased. The as-grown and annealed ZnO nanostructures exhibited a strong (002) diffraction peak. Compared to the as-grown ZnO nanostructures, the annealed ZnO nanostructures exhibited significantly strong enhancement in the PL intensity ratio by almost a factor of 2.
NASA Astrophysics Data System (ADS)
Ding, Ling; Zhang, Ruixue; Fan, Louzhen
2013-02-01
A simple and facile electrochemical route was developed for the shape-selective synthesis of large-scaled series of ZnO microstructures, including petal, flower, sphere, nest and clew aggregates of ZnO laminas at room temperature. This route is based on sodium citrate-directed crystallization. In the system, sodium citrate can greatly promote ZnO to nucleate and directly grow by selectively capping the specific ZnO facets because of its excellent adsorption ability. The morphology of ZnO is tuned by readily adjusting the concentration of sodium citrate and the electrodeposition time. Among the series structures, the remarkable ZnO nestlike structure can be used as a container to hold not only the interlaced ZnO laminas but also Ag nanoparticles in the center. The special heterostructures of nestlike ZnO holding Ag nanoparticles were found to display the superior properties on the surface-enhanced Raman scattering. This work has signified an important methodology to produce a wide assortment of desired microstructures of ZnO.
Large area optical mapping of surface contact angle.
Dutra, Guilherme; Canning, John; Padden, Whayne; Martelli, Cicero; Dligatch, Svetlana
2017-09-04
Top-down contact angle measurements have been validated and confirmed to be as good if not more reliable than side-based measurements. A range of samples, including industrially relevant materials for roofing and printing, has been compared. Using the top-down approach, mapping in both 1-D and 2-D has been demonstrated. The method was applied to study the change in contact angle as a function of change in silver (Ag) nanoparticle size controlled by thermal evaporation. Large area mapping reveals good uniformity for commercial Aspen paper coated with black laser printer ink. A demonstration of the forensic and chemical analysis potential in 2-D is shown by uncovering the hidden CsF initials made with mineral oil on the coated Aspen paper. The method promises to revolutionize nanoscale characterization and industrial monitoring as well as chemical analyses by allowing rapid contact angle measurements over large areas or large numbers of samples in ways and times that have not been possible before.
Huang, Heh-Chang; Hsieh, Tsung-Eong
2010-07-23
ZnO particles with an average size of about 5 nm were prepared via a sol-gel chemical route and the silane coupling agent, (3-glycidyloxypropyl)-trimethoxysilane (GPTS), was adopted to enhance the dispersion of the ZnO nanoparticles in ethyl glycol (EG) solution. A ZnO surface potential as high as 66 mV was observed and a sedimentation test showed that the ZnO precursor solution remains transparent for six months of storage, elucidating the success of surface modification on ZnO nanoparticles. The ZnO thin films were then prepared by spin coating the precursor solution on a Si wafer and annealing treatments at temperatures up to 500 degrees C were performed for subsequent preparation of ZnO thin film transistors (TFTs). Microstructure characterization revealed that the coalescence of ZnO nanoparticles occurs at temperatures as low as 200 degrees C to result in a highly uniform, nearly pore-free layer. However, annealing at higher temperatures was required to remove organic residues in the ZnO layer for satisfactory device performance. The 500 degrees C-annealed ZnO TFT sample exhibited the best electrical properties with on/off ratio = 10(5), threshold voltage = 17.1 V and mobility (micro) = 0.104 cm(2) V(-1) s(-1).
NASA Astrophysics Data System (ADS)
Sannakashappanavar, Basavaraj S.; Byrareddy, C. R.; Kumar, Pesala Sudheer; Yadav, Aniruddh Bahadur
2018-05-01
Hydrothermally grown one dimensional ZnO nanostructures are among the most widely used semiconductor materials to build high-efficiency electronic devices for various applications. Few researchers have addressed the growth mechanism and effect of ZnO seed layer on different properties of ZnO nanorods grown by hydrothermal method, instead, no one has synthesized ZnO nanorod over SiO2/p-Si substrate. The aim of this study is to study the effect of ZnO seed layer and the growth mechanism of ZnO nanorods over SiO2/p-Si substrate. To achieve the goal, we have synthesized ZnO nanorods over different thickness ZnO seed layers by using the hydrothermal method on SiO2/p-Si substrate. The effects of c-plane area ratio were identified for the growth rate of c-plane, reaction rate constant and stagnant layer thickness also calculated by using a modified rate growth equation. We have identified maximum seed layer thickness for the growth of vertical ZnO nanorod. A step dislocation in the ZnO nanorods grown on 150and 200 nm thick seed layers was observed, the magnitude of Burges vector was calculated for this disorder. The seed layer and ZnO nanorods were characterized by AFM, XPS, UV-visible, XRD (X-ray diffraction, and SEM(scanning electron microscope). To justify the application of the grown ZnO nanorods Ti/Au was deposited over ZnO nanorods grown over all seed layers for the fabrication of photoconductor type UV detector.
Bioavailability of Zn in ZnO nanoparticle-spiked soil and the implications to maize plants
NASA Astrophysics Data System (ADS)
Liu, Xueqin; Wang, Fayuan; Shi, Zhaoyong; Tong, Ruijian; Shi, Xiaojun
2015-04-01
Little is known about the relationships between Zn bioavailability in ZnO nanoparticle (NP)-spiked soil and the implications to crops. The present pot culture experiment studied Zn bioavailability in soil spiked with different doses of ZnO NPs, using the diethylenetriaminepentaacetic acid (DTPA) extraction method, as well as the toxicity and Zn accumulation in maize plants. Results showed that ZnO NPs exerted dose-dependent effects on maize growth and nutrition, photosynthetic pigments, and root activity (dehydrogenase), ranging from stimulatory (100-200 mg/kg) through to neutral (400 mg/kg) and toxic effect (800-3200 mg/kg). Both Zn concentration in shoots and roots correlated positively ( P < 0.01) with ZnO NPs dose and soil DTPA-extractable Zn concentration. The BCF of Zn in shoots and roots ranged from 1.02 to 3.83 when ZnO NPs were added. In most cases, the toxic effects on plants elicited by ZnO NPs were overall similar to those caused by bulk ZnO and soluble Zn (ZnSO4) at the same doses, irrespective of some significant differences suggesting a higher toxicity of ZnO NPs. Oxidative stress in plants via superoxide free radical production was induced by ZnO NPs at 800 mg/kg and above, and was more severe than the same doses of bulk ZnO and ZnSO4. Although significantly lower compared to bulk ZnO and ZnSO4, at least 16 % of the Zn from ZnO NPs was converted into DTPA-extractable (bioavailable) forms. The dissolved Zn2+ from ZnO NPs may make a dominant contribution to their phytotoxicity. Although low amounts of ZnO NPs exhibited some beneficial effects, the accumulation of Zn from ZnO NPs into maize tissues could pose potential health risks for both plants and human.
Role of defects in ferromagnetism in Zn1-xCoxO : A hybrid density-functional study
NASA Astrophysics Data System (ADS)
Patterson, C. H.
2006-10-01
Experimental studies of Zn1-xCoxO as thin films or nanocrystals have found ferromagnetism and Curie temperatures above room temperature and that p - or n -type doping of Zn1-xCoxO can change its magnetic state. Bulk Zn1-xCoxO with a low defect density and x in the range used in experimental thin-film studies exhibits ferromagnetism only at very low temperatures. Therefore defects in thin-film samples or nanocrystals may play an important role in promoting magnetic interactions between Co ions in Zn1-xCoxO . The mechanism of exchange coupling induced by defect states is considered and compared to a model for ferromagnetism in dilute magnetic semiconductors [T. Dietl , Science 287, 1019 (2000)]. The electronic structures of Co substituted for Zn in ZnO, Zn, and O vacancies, substituted N, and interstitial Zn in ZnO were calculated using the B3LYP hybrid density functional in a supercell. The B3LYP functional predicts a band gap of 3.34eV for bulk ZnO, close to the experimental value of 3.47eV . Occupied minority-spin Co 3d levels are at the top of the valence band and unoccupied levels lie above the conduction-band minimum. Majority-spin Co 3d levels hybridize strongly with bulk ZnO states. The neutral O vacancy defect level is predicted to lie deep in the band gap, and interstitial Zn is predicted to be a deep donor. The Zn vacancy is a deep acceptor, and the acceptor level for substituted N is at midgap. The possibility that p - or n -type dopants promote exchange coupling of Co ions was investigated by computing the total energies of magnetic states of ZnO supercells containing two Co ions and an oxygen vacancy, substituted N, or interstitial Zn in various charge states. The neutral N defect and the singly positively charged O vacancy are the only defects which strongly promote ferromagnetic exchange coupling of Co ions at intermediate range. Total energy calculations on supercells containing two O vacancies and one Zn vacancy clearly show that pairs of singly positively charged O vacancies are unstable with respect to dissociation into neutral and doubly positively charged vacancies; the oxygen vacancy is a “negative U ” defect. This apparently precludes simple charged O vacancies as a mediator of ferromagnetism in Zn1-xCoxO .
Electrochemical modification of properties of ZnO films
NASA Astrophysics Data System (ADS)
Abe, Koji; Okubo, Takamasa; Ishikawa, Hirohito
2017-12-01
The properties of Al-doped ZnO films and Li- and Al-doped ZnO films were modified by electrochemical treatment. A constant current was applied between a ZnO film and a Pt electrode in an electrolyte solution. The sheet resistance of the ZnO film increased and decreased depending on the direction of current flow during the electrochemical treatment. When the ZnO film was used as a cathode (forward biased condition), the sheet resistance of the ZnO film decreased with increasing treatment time. The optical bandgap of the H2-annealed ZnO film also depended on the direction of current flow and increased under the forward biased condition. The electrochemical treatment caused the Burstein-Moss effect.
Defect evolution in ZnO and its effect on radiation tolerance.
Lv, Jinpeng; Li, Xingji
2018-05-03
The origin of ZnO radiation resistance is fascinating but still unclear. Herein, we found that radiation tolerance of ZnO can be tuned by engineering intrinsic defects into the ZnO. The role played by native defects in the radiation tolerance of ZnO was systematically explored by carrying out N+ implantation on a set of home-grown ZnO nanocrystals with various lattice defect types and concentrations. Interestingly, decreasing the VO and Zni concentration significantly aggravated N+ radiation damage, indicating the presence of O-deficient defects to be the potential cause of the radiation hardness of ZnO. A similar phenomenon was also observed for H+-implanted ZnO. This work offers a new way to manipulate ZnO and endow it with desired physicochemical properties, and is expected to pave the way for its application in radiative environments.
Influence of Dopants in ZnO Films on Defects
NASA Astrophysics Data System (ADS)
Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao
2008-12-01
The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com; Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, M., E-mail: rusop@salam.uitm.my
2016-07-06
Effects of different morphological structures of ZnO to the performance of the device in the humidity sensing have been studied. Two different kinds of nanostructures were obtained which are nanords and nanoflakes. From the surface morphology image, the ZnO nanoflakes has lower diameter size of 100 nm compared to ZnO nanorods of 250 nm. The ZnO nanoflakes are not aligned and has low porous structure compared to ZnO nanorods. The humidity sensor performance of ZnO nanorods has superior performance compared to ZnO nanoflakes. The sensitivity of the ZnO nanorods sensor is 3.20 which are almost two times higher than themore » ZnO nanoflakes of 1.65. The structural properties of the samples have been characterized using field emission scanning electron microscopy (FESEM) electrical properties has been characterized using current voltage (I-V) measurement.« less
Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction
DOE Office of Scientific and Technical Information (OSTI.GOV)
Iwan, S., E-mail: iwan-sugihartono@unj.ac.id; Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok; Fauzia, Vivi
Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffractionmore » peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.« less
Thin Film Solar Cells: Organic, Inorganic and Hybrid
NASA Technical Reports Server (NTRS)
Dankovich, John
2004-01-01
Thin film solar cells are an important developing resource for hundreds of applications including space travel. In addition to being more cost effective than traditional single crystal silicon cells, thin film multi-crystaline cells are plastic and light weight. The plasticity of the cells allows for whole solar panels to be rolled out from reams. Organic layers are being investigated in order to increase the efficiency of the cells to create an organic / inorganic hybrid cell. The main focus of the group is a thin film inorganic cell made with the absorber CuInS2. So far the group has been successful in creating the layer from a single-source precursor. They also use a unique method of film deposition called chemical vapor deposition for this. The general makeup of the cell is a molybdenum back contact with the CuInS2 layer, then CdS, ZnO and aluminum top contacts. While working cells have been produced, the efficiency so far has been low. Along with quantum dot fabrication the side project of this that is currently being studied is adding a polymer layer to increase efficiency. The polymer that we are using is P3OT (Poly(3-octylthiopene-2,5-diyll), retroregular). Before (and if) it is added to the cell, it must be understood in itself. To do this simple diodes are being constructed to begin to look at its behavior. The P3OT is spin coated onto indium tin oxide and silver or aluminum contacts are added. This method is being studied in order to find the optimal thickness of the layer as well as other important considerations that may later affect the composition of the finished solar cell. Because the sun is the most abundant renewable, energy source that we have, it is important to learn how to harness that energy and begin to move away from our other depleted non-renewable energy sources. While traditional silicon cells currently create electricity at relatively high efficiencies, they have drawbacks such as weight and rigidness that make them unattractive especially for space applications. Thin film photovoltaics have the potential to alleviate these problems and create a cheap and efficient way to harness the power of the sun.
Kumar, Suneel; Reddy, Nagappagari Lakshmana; Kushwaha, Himmat Singh; Kumar, Ashish; Shankar, Muthukonda Venkatakrishnan; Bhattacharyya, Kaustava; Halder, Aditi; Krishnan, Venkata
2017-09-22
The development of noble metal-free catalysts for hydrogen evolution is required for energy applications. In this regard, ternary heterojunction nanocomposites consisting of ZnO nanoparticles anchored on MoS 2 -RGO (RGO=reduced graphene oxide) nanosheets as heterogeneous catalysts show highly efficient photocatalytic H 2 evolution. In the photocatalytic process, the catalyst dispersed in an electrolytic solution (S 2- and SO 3 2- ions) exhibits an enhanced rate of H 2 evolution, and optimization experiments reveal that ZnO with 4.0 wt % of MoS 2 -RGO nanosheets gives the highest photocatalytic H 2 production of 28.616 mmol h -1 g cat -1 under sunlight irradiation; approximately 56 times higher than that on bare ZnO and several times higher than those of other ternary photocatalysts. The superior catalytic activity can be attributed to the in situ generation of ZnS, which leads to improved interfacial charge transfer to the MoS 2 cocatalyst and RGO, which has plenty of active sites available for photocatalytic reactions. Recycling experiments also proved the stability of the optimized photocatalyst. In addition, the ternary nanocomposite displayed multifunctional properties for hydrogen evolution activity under electrocatalytic and photoelectrocatalytic conditions owing to the high electrode-electrolyte contact area. Thus, the present work provides very useful insights for the development of inexpensive, multifunctional catalysts without noble metal loading to achieve a high rate of H 2 generation. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Yuan, Sujun; Mu, Jiuke; Mao, Ruiyi; Li, Yaogang; Zhang, Qinghong; Wang, Hongzhi
2014-04-23
The multilaminated ZnO/TiO2 heterojunction films were successfully deposited on conductive substrates including fluorine-doped tin oxide (FTO) glass and flexible indium tin oxide coated poly(ethylene terephthalate) via the layer-by-layer (LBL) self assembly method from the oxide colloids without using any polyelectrolytes. The positively charged ZnO nanoparticles and the negatively charged TiO2 nanoparticles were directly used as the components in the consecutive deposition process to prepare the heterojunction thin films by varying the thicknesses. Moreover, the crystal growth of both oxides could be efficiently inhibited by the good connection between ZnO and TiO2 nanoparticles even after calcination at 500 °C, especially for ZnO which was able to keep the crystallite size under 25 nm. The as-prepared films were used as the working electrodes in the three-electrode photoelectrochemical cells. Because the well-contacted nanoscale heterojunctions were formed during the LBL self-assembling process, the ZnO/TiO2 all-nanoparticle films deposited on both substrates showed remarkably enhanced photoelectrochemical properties compared to that of the well-established TiO2 LBL thin films with similar thicknesses. The photocurrent response collected from the ZnO/TiO2 electrode on the FTO glass substrate was about five times higher than that collected from the TiO2 electrode. Owing to the absence of the insulating layer of dried polyelectrolytes, the ZnO/TiO2 all-nanoparticle heterojunction films were expected to be used in the photoelectrochemical device before calcination.
Shim, Kyudae; Abdellatif, Mohamed; Choi, Eunsoo; Kim, Dongkyun
2017-04-01
The safety and effectiveness of antimicrobial ZnO films must be established for general applications. In this study, the antimicrobial activity, skin irritation, elution behavior, and mechanical properties of nanostructured ZnO films on stainless steel were evaluated. ZnO nanoparticle (NP) and ZnO nanowall (NW) structures were prepared with different surface roughnesses, wettability, and concentrations using an RF magnetron sputtering system. The thicknesses of ZnO NP and ZnO NW were approximately 300 and 620 nm, respectively, and ZnO NW had two diffraction directions of [0002] and [01-10] based on high-resolution transmission electron microscopy. The ZnO NW structure demonstrated 99.9% antimicrobial inhibition against Escherichia coli, Staphylococcus aureus, and Penicillium funiculosum, and no skin irritation was detected using experimental rabbits. Approximately 27.2 ± 3.0 μg L -1 Zn ions were eluted from the ZnO NW film at 100 °C for 24 h, which satisfies the WHO guidelines for drinking water quality. Furthermore, the Vickers hardness and fracture toughness of ZnO NW films on stainless steel were enhanced by 11 and 14% compared to those of the parent stainless steel. Based on these results, ZnO NW films on STS316L sheets are useful for household supplies, such as water pipes, faucets, and stainless steel containers.
NASA Astrophysics Data System (ADS)
Yoon, Im Taek; Cho, Hak Dong; Lee, Sejoon; Roshchupkin, Dmitry V.
2018-02-01
We have fabricated as-grown ZnO nanorods (NRs) and carbon-assisted NR arrays on semi-insulating (100)-oriented Si substrates. We compared the structural and luminescent properties of them. High-resolution transmission microscopy, field emission scanning electron microscopy, x-ray diffraction and energy-dispersive x-ray revealed that the as-grown ZnO NRs and carbon-assisted ZnO NRs were single crystals with a hexagonal wurtzite structure, and grew with a c-axis orientation perpendicular to the Si substrate. These measurements show that the carbon-assisted ZnO NRs were better synthesized vertically on an Si substrate compared to the as-grown ZnO NRs. Photoluminescence measurements showed that luminescence intensity of the carbon-assisted ZnO NRs was enhanced compared to the as-grown ZnO NRs. The enhanced luminescence intensity of the carbon-assisted ZnO demonstrates the possible improvement in the performance of photovoltaic nanodevices based on ZnO-like materials. This method can be applied to the fabrication of well-aligned ZnO NRs used widely in optoelectronic devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.
2014-04-24
ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less
NASA Astrophysics Data System (ADS)
Farhat, O. F.; Halim, M. M.; Ahmed, Naser M.; Qaeed, M. A.
2016-12-01
In this study, ZnO nanofibers (ZnO NFs) were successfully grown for the first time on Teflon substrates using CBD technique. The well-aligned ZnO nanorods (ZnO NRs) were transformed to ZnO nanofibers (NFs) by varying growth temperature and growth time. The high intensity and distinct growth orientation of peaks observed in the XRD spectra of the NFs indicate high crystal quality. The field emission scanning electron microscopy (FESEM) revealed high density of small diameter sized and long ZnO nanofibers (NFs) that are distributed in random directions. Raman analyses revealed a high E2 (high) peak at 436 nm, which indicates the wurtzite structure of ZnO. A flexible ZnO nanofiber (NFs)-based metal-semiconductor-metal UV detector was fabricated and analyzed for photo response and sensitivity under low power illumination (375 nm, 1.5 mW/cm2). The results showed a sensitivity of 4045% which can be considered a relatively high response and baseline recovery for UV detection.
NASA Astrophysics Data System (ADS)
Zhu, Shibu; Wei, Wei; Chen, Xiangnan; Jiang, Man; Zhou, Zuowan
2012-06-01
Polyaniline (PANI) hybridized ZnO photoanode for dye-sensitized solar cell (DSSC) was primarily prepared via a two-step process which involved hydrothermal growth of ZnO nanograss on the fluorine-doped tin oxide (FTO) substrate and subsequently chemisorption of PANI on the surfaces of the ZnO nanorods. The PANI hybridized ZnO nanograss films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Fourier transform infrared spectra (FT-IR), and the results indicated that there were chemical interactions between PANI and ZnO. Both pure ZnO nanograss and PANI hybridized ZnO nanograss were applied to DSSC. The results of photoelectrochemical measurement showed that the photocurrent density of PANI (100 mg/L) hybridized ZnO nanograss photoanode was significantly enhanced, and the overall light-conversion efficiency increased by 60%. The electrochemical impedance spectra (EIS) displayed that the electron densities in photoanodes of PANI hybridized ZnO nanograss were larger than that in pure ZnO nanograss. This is ascribed to more effective charge separation and faster interfacial charge transferring occurred in the hybrid photoanode.
NASA Astrophysics Data System (ADS)
Seo, Youngmi; Kim, Jung Hyeun
2011-06-01
Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.
Contact planarization of ensemble nanowires
NASA Astrophysics Data System (ADS)
Chia, A. C. E.; LaPierre, R. R.
2011-06-01
The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.
Contact planarization of ensemble nanowires.
Chia, A C E; LaPierre, R R
2011-06-17
The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.
Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio
2012-01-01
Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yu, Weiwei; Liu, Tiangui, E-mail: tianguiliu@gmail.com; Cao, Shiyi
In order to improve the photocatalytic and antibacterial activity of ZnO nanorods, ZnO nanorods decorated with MnO{sub 2} nanoparticles (MnO{sub 2}/ZnO nanorod hybrids) were prepared by using microwave assisted coprecipitation method under the influence of hydrogen peroxide, and the structure, photocatalytic activity and antibacterial property of the products were studied. Experimental results indicated that MnO{sub 2} nanoparticles are decorated on the surface of single crystalline ZnO nanorods. Moreover, the resultant MnO{sub 2}/ZnO nanorod hybrids have been proven to possess good photocatalytic and antibacterial activity, which their degradated efficiency for Rhodamin B (RhB) is twice as the pure ZnO nanorods. Enhancementmore » for photocatalytic and antibacterial activity is mainly attributed to the low band gap energy and excellent electrochemical properties of MnO{sub 2} nanoparticles. - Graphical abstract: The MnO{sub 2}/single crystalline ZnO nanorods hybrids, which MnO{sub 2} nanoparticles are loaded on the surface of ZnO nanorods, were prepared by the step-by-step precipitation method under the assistance of ammonia and hydrogen peroxide. Display Omitted - Highlights: • MnO{sub 2}/ZnO nanorod hybrids were prepared by the step-by-step assembly method. • Single crystalline ZnO nanorods can be decorated by MnO{sub 2} nanoparticles. • MnO{sub 2}/ZnO nanorod hybrids possess good photocatalytic and antibacterial activity. • MnO{sub 2} can improve the photocatalytic activity of ZnO nanorods under visible light.« less
NREL Researcher is Top World Physicist
is Top World Physicist For more information contact: Kerry Masson, (303) 275-4083 e:mail physicists in the world by the Institute of Scientific Information (ISI). The standing is based on the number your peers is the ultimate measure of the quality and quantity of world class research being conducted
Atomic-Level Properties of Thermal Barrier Coatings: Characterization of Metal-Ceramic Interfaces
2001-01-01
these cases metal - metal bonds were stronger than metal - substrate bonds, thus predicting a 3D (cluster) growth mode as opposed to layer-by-layer...coat layer must be deposited. The top coat serves as the insulator and the bond coat mediates contact between the top coat and metal alloy substrate ...in thermomechanical properties between a YSZ top coat and a metal -alloy substrate is enough to require the introduction of an intermediate layer. This
Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun
2014-08-01
This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.
Long-term effect of ZnO nanoparticles on waste activated sludge anaerobic digestion.
Mu, Hui; Chen, Yinguang
2011-11-01
The increasing use of zinc oxide nanoparticles (ZnO NPs) raises concerns about their environmental impacts, but the potential effect of ZnO NPs on sludge anaerobic digestion remains unknown. In this paper, long-term exposure experiments were carried out to investigate the influence of ZnO NPs on methane production during waste activated sludge (WAS) anaerobic digestion. The presence of 1 mg/g-TSS of ZnO NPs did not affect methane production, but 30 and 150 mg/g-TSS of ZnO NPs induced 18.3% and 75.1% of inhibition respectively, which showed that the impact of ZnO NPs on methane production was dosage dependant. Then, the mechanisms of ZnO NPs affecting sludge anaerobic digestion were investigated. It was found that the toxic effect of ZnO NPs on methane production was mainly due to the release of Zn(2+) from ZnO NPs, which may cause the inhibitory effects on the hydrolysis and methanation steps of sludge anaerobic digestion. Further investigations with enzyme and fluorescence in situ hybridization (FISH) assays indicated that higher concentration of ZnO NPs decreased the activities of protease and coenzyme F(420), and the abundance of methanogenesis Archaea. Copyright © 2011 Elsevier Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Roy, Sanchita; Barua, Nilakshi; Buragohain, Alak K.; Ahmed, Gazi A.
2013-03-01
Investigations on treatment of ZnO nanoparticles on Staphylococcus aureus MTCC 737 strain was essentially made by using standard biochemical method. The anti-microbial assay against S. aureus, and time kill assay revealed the anti-bacterial activity of ZnO nanoparticles. We have substantiated this property of ZnO nanoparticles and light depolarization property by using light scattering tool. Light scattering measurements were carried out for ZnO, S. aureus, and ZnO treated S. aureus as a function of scattering angle at 543.5 and 632.8 nm wavelengths. This was done in order to find the scattering profile of the consequent product after the action of ZnO nanoparticles on bacteria by means of light scattering tool. S. aureus treated with ZnO nanoparticles showed closer agreement of the scattering profiles at both the wavelengths, however, the scattering profiles of ZnO nanoparticles and untreated S. aureus significantly varied for the two different laser wavelengths. It was also observed that there was higher intensity of scattering from all S. aureus treated with ZnO particles compared to the untreated ones. In our work, we have studied ZnO nanoparticles and the possibility of observing its anti-bacterial activity by using light scattering tool.
NOAA Photo Library Banner Takes you to the Top Page Takes you to the About this Site page. Takes concerning this site, please contact: NOAA Photo Library NOAA Central Library Email: photolibrary@noaa.gov Library NOAA Privacy Policy | NOAA Disclaimer Last Updated: September 30, 2009
Amorphous semiconductor solar cell
Dalal, Vikram L.
1981-01-01
A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.
Observing Shared Attention Modulates Gaze Following
ERIC Educational Resources Information Center
Bockler, Anne; Knoblich, Gunther; Sebanz, Natalie
2011-01-01
Humans' tendency to follow others' gaze is considered to be rather resistant to top-down influences. However, recent evidence indicates that gaze following depends on prior eye contact with the observed agent. Does observing two people engaging in eye contact also modulate gaze following? Participants observed two faces looking at each other or…
Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures.
Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C
2016-09-27
Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices.
Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures
Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C.
2016-01-01
Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices. PMID:27671709
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lu, Xianyong, E-mail: xylu@buaa.edu.cn; Liu, Zhaoyue; Zhu, Ying
2011-10-15
Highlights: {yields} Mg-doped ZnO nanoparticles were synthesized by sonochemical strategy. {yields} Mg-doped ZnO nanoparticles present good photocatalytic properties. {yields} The change of band gap contributes to their high efficiency in photocatalyst. -- Abstract: Mg-doped ZnO nanoparticles were successfully synthesized by sonochemical method. The products were characterized by scan electron microscopy (SEM) and X-ray powder diffraction (XRD). SEM images revealed that ZnO doped with Mg(II) nanoparticles and ZnO nanoparticles synthesized by the same strategy all had spherical topography. XRD patterns showed that the doped nanoparticles had the same crystals structures as the pure ZnO nanoparticles. The Mg-doped ZnO nanoparticles had largermore » lattice volume than the un-doped nanoparticles. X-ray photoelectron spectroscopy (XPS) not only demonstrated the moral ratio of Mg and Zn element on the surface of nanoparticles, but their valence in nanoparticles as well. The Mg-doped ZnO nanoparticles presented good properties in photocatalyst compared with pure ZnO nanoparticles.« less
Enhanced bioactivity of ZnO nanoparticles—an antimicrobial study
Padmavathy, Nagarajan; Vijayaraghavan, Rajagopalan
2008-01-01
In this study, we investigate the antibacterial activity of ZnO nanoparticles with various particle sizes. ZnO was prepared by the base hydrolysis of zinc acetate in a 2-propanol medium and also by a precipitation method using Zn(NO3)2 and NaOH. The products were characterized by x-ray diffraction (XRD) analysis, transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. Bacteriological tests such as minimum inhibitory concentration (MIC) and disk diffusion were performed in Luria-Bertani and nutrient agar media on solid agar plates and in liquid broth systems using different concentrations of ZnO by a standard microbial method for the first time. Our bacteriological study showed the enhanced biocidal activity of ZnO nanoparticles compared with bulk ZnO in repeated experiments. This demonstrated that the bactericidal efficacy of ZnO nanoparticles increases with decreasing particle size. It is proposed that both the abrasiveness and the surface oxygen species of ZnO nanoparticles promote the biocidal properties of ZnO nanoparticles. PMID:27878001
Enhanced bioactivity of ZnO nanoparticles—an antimicrobial study
NASA Astrophysics Data System (ADS)
Padmavathy, Nagarajan; Vijayaraghavan, Rajagopalan
2008-07-01
In this study, we investigate the antibacterial activity of ZnO nanoparticles with various particle sizes. ZnO was prepared by the base hydrolysis of zinc acetate in a 2-propanol medium and also by a precipitation method using Zn(NO3)2 and NaOH. The products were characterized by x-ray diffraction (XRD) analysis, transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. Bacteriological tests such as minimum inhibitory concentration (MIC) and disk diffusion were performed in Luria-Bertani and nutrient agar media on solid agar plates and in liquid broth systems using different concentrations of ZnO by a standard microbial method for the first time. Our bacteriological study showed the enhanced biocidal activity of ZnO nanoparticles compared with bulk ZnO in repeated experiments. This demonstrated that the bactericidal efficacy of ZnO nanoparticles increases with decreasing particle size. It is proposed that both the abrasiveness and the surface oxygen species of ZnO nanoparticles promote the biocidal properties of ZnO nanoparticles.
Photoluminescent ZnO Nanoparticles and Their Biological Applications
Zhang, Zheng-Yong; Xiong, Huan-Ming
2015-01-01
During the past decades, numerous achievements concerning luminescent zinc oxide nanoparticles (ZnO NPs) have been reported due to their improved luminescence and good biocompatibility. The photoluminescence of ZnO NPs usually contains two parts, the exciton-related ultraviolet (UV) emission and the defect-related visible emission. With respect to the visible emission, many routes have been developed to synthesize and functionalize ZnO NPs for the applications in detecting metal ions and biomolecules, biological fluorescence imaging, nonlinear multiphoton imaging, and fluorescence lifetime imaging. As the biological applications of ZnO NPs develop rapidly, the toxicity of ZnO NPs has attracted more and more attention because ZnO can produce the reactive oxygen species (ROS) and release Zn2+ ions. Just as a coin has two sides, both the drug delivery and the antibacterial effects of ZnO NPs become attractive at the same time. Hence, in this review, we will focus on the progress in the synthetic methods, luminescent properties, and biological applications of ZnO NPs.
Observations of two-dimensional monolayer zinc oxide
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sahoo, Trilochan, E-mail: trilochansahoo@gmail.com; Nayak, Sanjeev K.; Chelliah, Pandian
2016-03-15
Highlights: • Synthesis of planer ZnO nanostructure. • Observation of multilayered and monolayer ZnO. • DFT calculation of (10-10), (11-20) and (0 0 0 1) planes of ZnO. • Stability of non-polar (10-10) and (11-20) planes of ZnO. - Abstract: This letter reports the observations of planar two-dimensional ZnO synthesized using the hydrothermal growth technique. High-resolution transmission electron microscopy revealed the formation of a two-dimensional honeycomb lattice and aggregated structures of layered ZnO. The nonpolar (10-10) and (11-20) planes were present in the X-ray diffraction patterns, but the characteristic (0 0 0 1) peak of bulk ZnO was absent. Themore » study found that nonpolar freestanding ZnO structures composed of a single or few layers may be more stable and may have a higher probability of formation than their polar counterparts. The stability of the nonpolar two-dimensional hexagonal ZnO slabs is supported by density functional theory studies.« less
Miniaturized accelerometer made with ZnO nanowires
NASA Astrophysics Data System (ADS)
Song, Sangho; Kim, Jeong Woong; Kim, Hyun Chan; Yun, Youngmin; Kim, Jaehwan
2017-04-01
Miniaturized accelerometer is required in many applications, such as, robotics, haptic devices, gyroscopes, simulators and mobile devices. ZnO is an essential semiconductor material with wide direct band gap, thermal stability and piezoelectricity. Especially, well aligned ZnO nanowire is appropriate for piezoelectric applications since it can produce high electrical signal under mechanical load. To miniaturize accelerometer, an aligned ZnO nanowire is adopted to implement active piezoelectric layer of the accelerometer and copper is chosen for the head mass. To grow ZnO nanowire on the copper head mass, hydrothermal synthesis is conducted and the effect of ZnO nanowire length on the accelerometer performance is investigated. Refresh hydrothermal synthesis can increase the length of ZnO nanowire. The performance of the fabricated ZnO accelerometers is compared with a commercial accelerometer. Sensitivity and linearity of the fabricated accelerometers are investigated.
NASA Astrophysics Data System (ADS)
Sun, Xu; Gu, Yousong; Wang, Xueqiang
2012-08-01
One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.
Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient
2012-01-01
ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices. PMID:22502639
Huang, Nan; Sun, Chao; Zhu, Mingwei; Zhang, Bin; Gong, Jun; Jiang, Xin
2011-07-01
ZnO:Al thin films with Al incorporation of 0-20 at.% were deposited through the sol-gel technique. Such a film undergoes a significant microstructure development, from columnar to granular structures and then nanorod arrays with increasing Al content. The important role of Al incorporation level in the microstructure evolution was determined using scanning electron microscopy, x-ray photoelectron spectroscopy and transmission electron microscopy. At low Al level, the transition from columnar to granular grains can be attributed to the coarsening barrier resulting from the introduction of Al into the matrix. However, oriented structures of ZnO nanorod arrays are formed at a high Al level. TEM investigation reveals that a nanorod with smooth morphology at the top and rough morphology at the bottom has a single-crystalline wurtzite structure, which is the aggregation of nanoparticles of a few nanometers in size formed through the orientation attachment mechanism followed by epitaxial growth on the aggregated particles. Finally, the physical properties of the ZnO films with different degrees of Al concentration are discussed. Such detailed microstructure studies may aid the understanding of the doping effect process on the growth of a film, which is essential to altering its physical or chemical properties.
Method for manufacturing electrical contacts for a thin-film semiconductor device
Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.
1988-11-08
A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.
Electrical contacts for a thin-film semiconductor device
Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.
1989-08-08
A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.
Investigation of ZnO Nanowire Interfaces for Multi-Scale Composites
2012-03-06
growth of zinc oxide ( ZnO ) nanowires on the surface of the...through the growth of zinc oxide ( ZnO ) nanowires on the surface of the reinforcing fibers. The nanowires functionally grade the interface, improve bonding...bulk composite. This has been accomplished through the growth of zinc oxide ( ZnO ) nanowires on the surface of the reinforcing fibers. ZnO
Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay
NASA Astrophysics Data System (ADS)
Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo; Mohamed, Azman Seeni; Saifuddin, Siti Nazmin; Masudi, Sam'an Malik; Mohamad, Dasmawati
2015-04-01
ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shifted of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line.
Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures
NASA Astrophysics Data System (ADS)
Wahyuono, Ruri Agung; Hermann-Westendorf, Felix; Dellith, Andrea; Schmidt, Christa; Dellith, Jan; Plentz, Jonathan; Schulz, Martin; Presselt, Martin; Seyring, Martin; Rettenmeyer, Markus; Dietzek, Benjamin
2017-02-01
Annealing treatment was applied to different mesoporous ZnO nanostructures prepared by wet chemical synthesis, i.e. nanoflowers (NFs), spherical aggregates (SPs), and nanorods (NRs). The sub-bandgap, defect properties as well as the trapping state characteristics after annealing were characterized spectroscopically, including ultrasensitive photothermal deflection spectroscopy (PDS), photoluminescence and photo-electrochemical methods. The comprehensive experimental analysis reveals that annealing alters both the bandgap and the sub-bandgap. The defect concentration and the density of surface traps in the ZnO nanostructures are suppressed upon annealing as deduced from photoluminescence and open-circuit voltage decay analysis. The photo-electrochemical investigations reveal that the surface traps dominate the near conduction band edge of ZnO and, hence, lead to high recombination rates when used in DSSCs. The density of bulk traps in ZnO SPs is higher than that in ZnO NFs and ZnO NRs and promote lower recombination loss between photoinjected electrons with the electrolyte-oxidized species on the surface. The highest power conversion efficiency of ZnO NFs-, ZnO SPs-, and ZnO NRs-based DSSC obtained in our system is 2.0, 4.5, and 1.8%, respectively.
Cuba, M; Muralidharan, G
2015-11-01
The 30 wt% of ZnO (weight percentage of ZnO has been optimised) incorporated tris- (8-hydroxyquinoline)aluminum (Alq3) has been synthesised and coated on to glass substrates using dip coating method. The structural and optical properties of the Alq3/ZnO composite film after thermal annealing from 50 to 300 °C insteps 50° has been studied and reported. XRD pattern reveals the presence of crystalline ZnO in all the annealed films. The films annealed above 150 °C reveal the presence of crystalline Alq3 along with crystalline ZnO. The FTIR spectra confirm the presence of hydroxyquinoline and ZnO vibration in all the annealed composite films. The composite films annealed above 150 °C show a partial sublimation and degradation of hydroxyquinoline compounds. The ZnO incorporated composite films (Alq3/ZnO) exhibit two emission peaks, one corresponding to ZnO at 487 nm and another at 513 nm due to Alq3. The films annealed at 200 °C exhibit maximum photoluminescence (PL) intensity than pristine film at 513 nm when excited at 390 nm.
In vitro toxicity of zinc oxide nanoparticles: a review
NASA Astrophysics Data System (ADS)
Pandurangan, Muthuraman; Kim, Doo Hwan
2015-03-01
The toxic effect of ZnO nanoparticles is due to their solubility. ZnO nanoparticles dissolve in the extracellular region, which in turn increases the intracellular [Zn2+] level. The mechanism for increased intracellular [Zn2+] level and ZnO nanoparticles dissolution in the medium is still unclear. Cytotoxicity, increased oxidative stress, increased intracellular [Ca2+] level, decreased mitochondrial membrane potential, and interleukin-8 productions occur in the BEAS-2B bronchial epithelial cells and A549 alveolar adenocarcinoma cells following the exposure of ZnO nanoparticles. Confluent C2C12 cells are more resistant to ZnO nanoparticles compared to the sparse monolayer. Loss of 3T3-L1 cell viability, membrane leakage, and morphological changes occurs due to exposure of ZnO nanoparticles. ZnO nanoparticle induces cytotoxicity and mitochondrial dysfunction in RKO colon carcinoma cells. The occurrence of apoptosis, increased ROS level, reduced mitochondrial activity and formation of tubular intracellular structures are reported following exposure of ZnO nanoparticles in skin cells. Macrophages, monocytes, and dendritic cells are affected by ZnO nanoparticles. In addition, genotoxicity is also induced. The present review summarizes the literature on in vitro toxicity of ZnO nanoparticles (10-100 nm) on various cell lines.
Scherzad, Agmal; Meyer, Till; Kleinsasser, Norbert
2017-01-01
Background: Zinc oxide nanoparticles (ZnO NPs) are among the most frequently applied nanomaterials in consumer products. Evidence exists regarding the cytotoxic effects of ZnO NPs in mammalian cells; however, knowledge about the potential genotoxicity of ZnO NPs is rare, and results presented in the current literature are inconsistent. Objectives: The aim of this review is to summarize the existing data regarding the DNA damage that ZnO NPs induce, and focus on the possible molecular mechanisms underlying genotoxic events. Methods: Electronic literature databases were systematically searched for studies that report on the genotoxicity of ZnO NPs. Results: Several methods and different endpoints demonstrate the genotoxic potential of ZnO NPs. Most publications describe in vitro assessments of the oxidative DNA damage triggered by dissoluted Zn2+ ions. Most genotoxicological investigations of ZnO NPs address acute exposure situations. Conclusion: Existing evidence indicates that ZnO NPs possibly have the potential to damage DNA. However, there is a lack of long-term exposure experiments that clarify the intracellular bioaccumulation of ZnO NPs and the possible mechanisms of DNA repair and cell survival. PMID:29240707
Emission and Structure-Varying ZnO and Carbon Nanocrystal Composite in Mechanical Processing
NASA Astrophysics Data System (ADS)
Torchynska, T.; Perez Millan, B.; Polupan, G.; Kakazey, M.
2018-03-01
Morphology, photoluminescence (PL), and Raman scattering spectra have been investigated for mixtures of ZnO+0.1%C nanocrystals (NCs) at different stages of mechanical processing (MP). The transformation of graphite into graphene monolayers covering the ZnO NC surface is revealed for the first MP stage. The interaction with oxygen has been detected in the second MP stage which leads to the dissolution of oxygen interstitials in the ZnO NCs and to the formation of graphene (graphite) oxides. Increasing the concentration of the oxygen interstitials in ZnO NCs also enhances the intensity stimulation of the orange PL band (2.18eV). Simultaneously, the PL band peaking at 2.82-2.90 eV is detected in the PL spectra of the ZnO+0.1%C NC mixture after MP for 9-90 min. Then, the variation of the ZnO NC shape, agglomeration of ZnO NCs, modification of ZnO defects and decreasing PL intensity have been detected after prolonged MP for 390 min. It is expected that short stages of MP can be useful for ZnO NC surface covering by graphene layers or graphene (graphite) oxides.
2013-01-01
Abstract A simple and facile electrochemical route was developed for the shape-selective synthesis of large-scaled series of ZnO microstructures, including petal, flower, sphere, nest and clew aggregates of ZnO laminas at room temperature. This route is based on sodium citrate-directed crystallization. In the system, sodium citrate can greatly promote ZnO to nucleate and directly grow by selectively capping the specific ZnO facets because of its excellent adsorption ability. The morphology of ZnO is tuned by readily adjusting the concentration of sodium citrate and the electrodeposition time. Among the series structures, the remarkable ZnO nestlike structure can be used as a container to hold not only the interlaced ZnO laminas but also Ag nanoparticles in the center. The special heterostructures of nestlike ZnO holding Ag nanoparticles were found to display the superior properties on the surface-enhanced Raman scattering. This work has signified an important methodology to produce a wide assortment of desired microstructures of ZnO. PACS 81 Materials science 81.07.-b nanoscale materials and structures Fabrication Characterization 81.15.-z Methods of deposition of films Coatings Film growth and epitaxy. PMID:23414592
Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo
2015-04-24
ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shiftedmore » of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line.« less
Mousavi Kouhi, Seyed Mousa; Lahouti, Mehrdad; Ganjeali, Ali; Entezari, Mohammad H
2015-07-01
Rapid development of nanotechnology in recent years has raised concerns about nanoparticle (NPs) release into the environment and its adverse effects on living organisms. The present study is the first comprehensive report on the anatomical and ultrastructural changes of a variety of cells after long-term exposure of plant to NPs or bulk material particles (BPs). Light and electron microscopy revealed some anatomical and ultrastructural modifications of the different types of cell in the root and leaf, induced by both types of treatment. Zinc oxide (ZnO) BPs-induced modifications were surprisingly more than those induced by ZnO NPs. The modifications induced by ZnO BPs or ZnO NPs were almost similar to those induced by excess Zn. Zn content of the root and leaf of both ZnO NPs- and ZnO BPs-treated plants was severely increased, where the increase was greater in the plants treated with ZnO BPs. Overall, these results indicate that the modifications induced by ZnO particles can be attributed, at least partly, to the Zn(2+) dissolution by ZnO particles rather than their absorption by root and their subsequent effects.
The effect of ZnO nanoparticles on liver function in rats
Tang, Hua-Qiao; Xu, Min; Rong, Qian; Jin, Ru-Wen; Liu, Qi-Ji; Li, Ying-Lun
2016-01-01
Zinc oxide (ZnO) is widely incorporated as a food additive in animal diets. In order to optimize the beneficial effects of ZnO and minimize any resultant environmental pollution, ZnO nanoparticles are often used for delivery of the zinc. However, the possible toxic effects of ZnO nanoparticles, including effects on cytochrome P450 (CYP450) enzymes, have not been evaluated. In this study, we investigated the effect of ZnO nanoparticles, in doses used in animal feeds, on CYP450 enzymes, liver and intestinal enzymes, liver and kidney histopathology, and hematologic indices in rats. We found that liver and kidney injury occurred when the concentrations of ZnO nanoparticles in feed were 300–600 mg/kg. Also, liver mRNA expression for constitutive androstane receptor was suppressed and mRNA expression for pregnane X receptor was induced when feed containing ZnO nanoparticles was given at a concentration of 600 mg/kg. Although the expression of mRNA for CYP 2C11 and 3A2 enzymes was induced by ZnO nanoparticles, the activities of CYP 2C11 and 3A2 were suppressed. While liver CYP 1A2 mRNA expression was suppressed, CYP 1A2 activity remained unchanged at all ZnO nanoparticle doses. Therefore, it has been concluded that ZnO nanoparticles, in the doses customarily added to animal feed, changed the indices of hematology and blood chemistry, altered the expression and activity of hepatic CYP enzymes, and induced pathological changes in liver and kidney tissues of rats. These findings suggest that greater attention needs to be paid to the toxic effects of ZnO nanoparticles in animal feed, with the possibility that the doses of ZnO should be reduced. PMID:27621621
Manikandan, V S; Palai, Akshaya K; Mohanty, Smita; Nayak, Sanjay K
2018-06-01
In the current investigation, TiO 2 and TiO 2 -ZnO (core-shell) spherical nanoparticles were synthesized by simple combined hydrolysis and refluxing method. A TiO 2 core nanomaterial on the shell material of ZnO was synthesized by utilizing variable ratios of ZnO. The structural characterization of TiO 2 -ZnO core/shell nanoparticles were done by XRD analysis. The spherical structured morphology of the TiO 2 -ZnO has been confirmed through field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) studies. The UV-visible spectra of TiO 2 -ZnO nanostructures were also compared with the pristine TiO 2 to investigate the shift of wavelength. The TiO 2 -ZnO core/shell nanoparticles at the interface efficiently collect the photogenarated electrons from ZnO and also ZnO act a barrier for reduced charge recombination of electrolyte and dye-nanoparticles interface. This combination improved the light absorption which induced the charge transfer ability and dye loading capacity of core-shell nanoparticles. An enhancement in the short circuit current (J sc ) from 1.67 mA/cm 2 to 2.1 mA/cm 2 has been observed for TiO 2 -ZnObased photoanode (with platinum free counter electrode), promises an improvement in the energy conversion efficiency by 57% in comparison with that of the DSSCs based on the pristine TiO 2 . Henceforth, TiO 2 -ZnO photoelectrode in ZnO will effectively act as barrier at the interface of TiO 2 -ZnO and TiO 2 , ensuring the potential for DSSC application. Copyright © 2018 Elsevier B.V. All rights reserved.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cho, Chunhum; Lee, Sangchul; Lee, Sang Kyung
2015-05-25
High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8 kΩ·μm from 2.1 kΩ·μm as the peripheral length increased from 312 to 792 μm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 × 10{sup 5} times lower than that of top-contacted graphene.
NASA Astrophysics Data System (ADS)
Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.
2013-03-01
In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.
Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method
NASA Astrophysics Data System (ADS)
Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.
2018-04-01
Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.
Synthesis, characterization and photocatalysis enhancement of Eu2O3-ZnO mixed oxide nanoparticles
NASA Astrophysics Data System (ADS)
Mohamed, W. S.; Abu-Dief, Ahmed M.
2018-05-01
Pure ZnO nanoparticles (NPs) and mixed Eu2O3 and ZnO NPs with different Eu2O3 ratios (5%, 10%, and 15%) were synthesized by a precipitation method under optimum conditions. The synthesized samples were characterized by means of X-ray diffraction, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy, transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, and UV-vis diffuse reflectance spectroscopy. The as-synthesized ZnO NPs exhibit high phase purity and a highly crystalline wurtzite ZnO structure. The mixed Eu2O3 and ZnO NPs exhibit a Eu2O3 zinc blend phase in addition to the wurtzite phase of pure ZnO, confirming the high purity and good crystallinity of the as-synthesized samples. The high-purity formation of ZnO and Eu2O3 phases was confirmed by FTIR and Raman spectra. Microstructural analysis by SEM and TEM confirmed the sphere-like morphology with different particle sizes (29-40 nm) of the as-synthesized samples. The photocatalytic activities of pure ZnO NPs and mixed Eu2O3 and ZnO NPs for the degradation of methylene blue were evaluated under ultraviolet (UV) irradiation. The results show that Eu2O3 plays an important role in the enhancement of the photocatalytic properties of ZnO NPs. We found that mixed 5% Eu2O3 and ZnO NPs exhibit the highest photocatalytic activity (degradation efficiency of 96.5% after 180 min of UV irradiation) as compared with pure ZnO NPs (degradation efficiency of 80.3% after 180 min of UV irradiation). The increased photocatalytic activity of the optimum mixed Eu2O3 and ZnO NPs is due to the high crystallinity, high surface area with small particle size, and narrow energy gap.
NASA Astrophysics Data System (ADS)
Pashchanka, Mikhail; Hoffmann, Rudolf C.; Burghaus, Olaf; Corzilius, Björn; Cherkashinin, Gennady; Schneider, Jörg J.
2011-01-01
The synthesis and full characterisation of pure and Mn-doped polycrystalline zinc oxide nanorods with tailored dopant content are obtained via a single source molecular precursor approach using two Schiff base type coordination compounds is reported. The infiltration of precursor solutions into the cylindrical pores of a polycarbonate template and their thermal conversion into a ceramic green body followed by dissolution of the template gives the desired ZnO and Mn-doped ZnO nanomaterial as compact rods. The ZnO nanorods have a mean diameter between 170 and 180 nm or 60-70 nm, depending on the template pore size employed, comprising a length of 5-6 μm. These nanorods are composed of individual sub-5 nm ZnO nanocrystals. Exact doping of these hierarchically structured ZnO nanorods was achieved by introducing Mn(II) into the ZnO host lattice with the precursor complex Diaquo-bis[2-(meth-oxyimino)-propanoato]manganese, which allows to tailor the exact Mn(II) doping content of the ZnO rods. Investigation of the Mn-doped ZnO samples by XRD, TEM, XPS, PL and EPR, reveals that manganese occurs exclusively in its oxidation state + II and is distributed within the volume as well as on the surface of the ZnO host.
Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan
2016-01-01
Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm−1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls. PMID:27071382
NASA Astrophysics Data System (ADS)
Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan
2016-04-01
Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm-1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls.
Bae, J Y; Park, S N
2016-12-01
In this study, anti-microbial activities of ZnO of three different particle sizes of citric acid (CA) and of mixtures of ZnO and CA were confirmed against Propionibacterium acnes. ZnO with the smallest particle size showed relatively high anti-microbial activity by disc diffusion assay and broth macrodilution assay. The mixtures of ZnO and CA also showed relatively high anti-microbial activity when the particle size of ZnO was the smallest. Furthermore, anti-microbial activities of ZnO, CA and the mixtures of ZnO and CA were compared through the checkerboard assay. The results indicated that a 1 : 1 ratio of ZnO and CA resulted in the highest anti-microbial activity. The substances were confirmed to have synergic anti-microbial effects. With the time-kill curve assay, the mixture of ZnO-containing CA reduced the surviving microbial content the most after 24 h. The results of our study suggest that ZnO may not only be an anti-microbial ingredient for the prevention of and treatment of acne. The results of our study suggest that ZnO may be an anti-microbial ingredient for the prevention of and treatment of acne when mixed with CA. © 2016 Society of Cosmetic Scientists and the Société Française de Cosmétologie.
NASA Astrophysics Data System (ADS)
Poornaprakash, B.; Chalapathi, U.; Purusottam Reddy, B.; Prabhakar Vattikuti, S. V.; Siva Pratap Reddy, M.; Park, Si-Hyun
2018-03-01
The sensible tuning of the structural, optical, and magnetic properties of ZnO nanoparticles (NPs) with suitable doping can enhance their applicability in diverse fields. In this study, we synthesized ZnO NPs with Er (0-4 at%) doping and their elemental, structural, optical, and magnetic properties were studied. Both field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) studies of the suspensions consist of hexagonal shaped NPs. All the prepared NPs exhibited hexagonal phase as demonstrated by powder x-ray diffraction studies. A blue shift was observed in the Er doped ZnO NPs compared to pure ZnO, indicating the increased optical bandgap. Vibrating sample magnetometer studies exhibited the pure ZnO NPs was typical diamagnetic feature whereas all the Er doped ZnO NPs were paramagnetic feature at 300 K. This is the first paramagnetic report on Er doped ZnO NPs.
NASA Astrophysics Data System (ADS)
Minh, Vu Anh; Tuan, Le Anh; Huy, Tran Quang; Hung, Vu Ngoc; Quy, Nguyen Van
2013-01-01
Vertically aligned ZnO nanorods were directly synthesised on a gold electrode of quartz crystal microbalance (QCM) by a simple low-temperature hydrothermal method for a NH3 gas sensing application. The length of vertically aligned ZnO nanorods was increased to purpose enhancement in the gas sensing response of the sensor. The length of ZnO nanorods increased with an increase in growth time. The growth time of ZnO nanorods was systematically varied in the range of 1-4 h to examine the effect of the length of the ZnO nanorods on the gas sensing properties of the fabricated sensors. The gas sensing properties of sensors with different ZnO nanorods lengths was examined at room temperature for various concentrations of NH3 (50-800 ppm) in synthetic air. Enhancement in gas sensing response by increasing the length of ZnO nanorods was observed.
Nanostructured ZnO - its challenging properties and potential for device applications
NASA Astrophysics Data System (ADS)
Dimova-Malinovska, D.
2017-01-01
Nanostructured ZnO possessing interesting structural and optical properties offers challenging opportunities for innovative applications. In this lecture the review of the optical and structural properties of ZnO nanostructured layers is presented. It is shown that they have a direct impact on the parameters of devices involving ZnO. An analysis of current trends in the photovoltaic (PV) field shows that improved light harvesting and efficiency of solar cells can be obtained by implementing nanostructured ZnO layers to process advanced solar cell structures. Because of amenability to doping, high chemical stability, sensitivity to different adsorbed gases, nontoxicity and low cost ZnO attracted much attention for application as gas sensors. The sensitivity of nano-grain ZnO gas elements is comparatively high because of the grain-size effect. Application of nanostructured ZnO for gas sensors and for increasing of light harvesting in solar cells is demonstrated.
Adhikari, Badri; Hou, Jie; Cheng, Jianlin
2018-03-01
In this study, we report the evaluation of the residue-residue contacts predicted by our three different methods in the CASP12 experiment, focusing on studying the impact of multiple sequence alignment, residue coevolution, and machine learning on contact prediction. The first method (MULTICOM-NOVEL) uses only traditional features (sequence profile, secondary structure, and solvent accessibility) with deep learning to predict contacts and serves as a baseline. The second method (MULTICOM-CONSTRUCT) uses our new alignment algorithm to generate deep multiple sequence alignment to derive coevolution-based features, which are integrated by a neural network method to predict contacts. The third method (MULTICOM-CLUSTER) is a consensus combination of the predictions of the first two methods. We evaluated our methods on 94 CASP12 domains. On a subset of 38 free-modeling domains, our methods achieved an average precision of up to 41.7% for top L/5 long-range contact predictions. The comparison of the three methods shows that the quality and effective depth of multiple sequence alignments, coevolution-based features, and machine learning integration of coevolution-based features and traditional features drive the quality of predicted protein contacts. On the full CASP12 dataset, the coevolution-based features alone can improve the average precision from 28.4% to 41.6%, and the machine learning integration of all the features further raises the precision to 56.3%, when top L/5 predicted long-range contacts are evaluated. And the correlation between the precision of contact prediction and the logarithm of the number of effective sequences in alignments is 0.66. © 2017 Wiley Periodicals, Inc.
Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M.A.; Ahamed, Maqusood
2015-01-01
We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33–55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved. PMID:26347142
NASA Astrophysics Data System (ADS)
Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood
2015-09-01
We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.
NASA Astrophysics Data System (ADS)
Arafat, M. M.; Ong, J. Y.; Haseeb, A. S. M. A.
2018-03-01
In this research, the gas sensing behavior of Pd nanoparticles loaded zinc stannate/zinc oxide (Zn2SnO4/ZnO) nanowires were investigated. The Zn2SnO4/ZnO nanowires were grown on Au interdigitated alumina substrate by carbon assisted thermal evaporation process. Pd nanoparticles were loaded on the Zn2SnO4/ZnO nanowires by wet reduction process. The nanowires were characterized by X-ray diffractometer, field emission scanning electron microscope and energy dispersive X-ray spectroscope. The Zn2SnO4/ZnO and Pd nanoparticles loaded Zn2SnO4/ZnO nanowires were investigated for detecting H2, H2S and C2H5OH gases in N2 background. Results revealed that the average diameter and length of as-grown Zn2SnO4/ZnO nanowires were 74 nm and 30 μm, respectively. During wet reduction process,Pd particles having size of 20-60 nm were evenly distributed on the Zn2SnO4/ZnO nanowires. The Zn2SnO4/ZnO nanowires based sensors showed selective response towards C2H5OH whereas Pd nanoparticles loaded Zn2SnO4/ZnO nanowires showed selective response towards H2. The recovery time of the sensors reduced with Pd loading on Zn2SnO4/ZnO nanowires. A mechanism is proposed to elucidate the gas sensing mechanism of Pd nanoparticles loaded Zn2SnO4/ZnO nanowires.
Akhtar, Mohd Javed; Alhadlaq, Hisham A; Alshamsan, Aws; Majeed Khan, M A; Ahamed, Maqusood
2015-09-08
We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of Al(x)Zn(1-x)O nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 &caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kulkarni, Suresh D., E-mail: suresh.dk@manipal.edu; Kumbar, Sagar; Menon, Samvit G.
Highlights: • Phase pure, magnetic ZnFe{sub 2}O{sub 4}@ZnO nanoparticles synthesized with excellent yield. • ZnFe{sub 2}O{sub 4}@ZnO displayed higher UV photocatalytic efficiency than ZnO nanoparticles. • First report on visible light photodegradation of methyl orange by ZnFe{sub 2}O{sub 4}@ZnO. • Excellent reusability of ZnFe{sub 2}O{sub 4}@ZnO nanoparticles observed for azo dye removal. - Abstract: Visible light photodegradation of aqueous methyl orange using magnetically separable core–shell ZnFe{sub 2}O{sub 4}@ZnO nanoparticles is reported. A combination of low temperature (190 °C) microwave synthesis and hydrothermal method were used to prepare phase pure material with excellent yield (95%). The magnetic separability, surface area ofmore » 41 m{sup 2}/g and visible light absorption make ZnFe{sub 2}O{sub 4}@ZnO nanoparticles a good solar photocatalyst. ZnFe{sub 2}O{sub 4}@ZnO displayed greater UV photocatalytic efficiency than ZnO owing to the generation of large number of electron-hole pairs. Visible light photodegradation of MO using ZnFe{sub 2}O{sub 4}@ZnO nanoparticles is reported for the first time. Higher first order rate constants under both UV and visible light for core-shell nanoparticles suggested their superiority over its individual oxides. The ZnFe{sub 2}O{sub 4}@ZnO showed excellent reusability with high photocatalytic efficiencies suggesting its suitability for solar photocatalytic applications.« less
2013-01-01
Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO. PMID:23590803
Hierarchical porous ZnO microflowers with ultra-high ethanol gas-sensing at low concentration
NASA Astrophysics Data System (ADS)
Song, Liming; Yue, He; Li, Haiying; Liu, Li; Li, Yu; Du, Liting; Duan, Haojie; Klyui, N. I.
2018-05-01
Hierarchical porous and non-porous ZnO microflowers have been successfully fabricated by hydrothermal method. Their crystal structure, morphology and gas-sensing properties were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and chemical gas sensing intelligent analysis system (CGS). Compared with hierarchical non-porous ZnO microflowers, hierarchical porous ZnO microflowers exhibited ultra-high sensitivity with 50 ppm ethanol at 260 °C and the response is 110, which is 1.8 times higher than that of non-porous ZnO microflowers. Moreover, the lowest concentration limit of hierarchical porous ZnO microflowers (non-porous ZnO microflowers) to ethanol is 0.1 (1) ppm, the response value is 1.6 (1).
NASA Astrophysics Data System (ADS)
Chen, Cheng; Ding, Taotao; Qi, Zhiqiang; Zhang, Wei; Zhang, Jun; Xu, Juan; Chen, Jingwen; Dai, Jiangnan; Chen, Changqing
2018-04-01
The periodically ordered ZnO nanorod (NR) arrays have been successfully synthesized via a hydrothermal approach on the silicon substrates by templating of the TiO2 ring deriving from the polystyrene (PS) nanosphere monolayer colloidal crystals (MCC). With the inverted MCC mask, sol-gel-derived ZnO seeds could serve as the periodic nucleation positions for the site-specific growth of ZnO NRs. The large-scale patterned arrays of single ZnO NR with good side-orientation can be readily produced. According to the experimental results, the as-integrated ZnO NR arrays showed an excellent crystal quality and optical property, very suitable for optoelectronic applications such as stimulated emitters and ZnO photonic crystal devices.
Thermodynamics of a Block Sliding across a Frictional Surface
ERIC Educational Resources Information Center
Mungan, Carl E.
2007-01-01
The following idealized problem is intended to illustrate some basic thermodynamic concepts involved in kinetic friction. A block of mass m is sliding on top of a frictional, flat-topped table of mass M. The table is magnetically levitated, so that it can move without thermal contact and friction across a horizontal floor. The table is initially…
NASA Astrophysics Data System (ADS)
Sirelkhatim, Amna; Mahmud, Shahrom; Seeni, Azman; Kaus, Noor Haida Mohd
2016-08-01
The present study aimed to synthesize multifunctional ZnO-NP samples, namely ZnO-20, ZnO-40, and ZnO-80 nm, using different approaches, to be used as efficient anticancer agents. Systematic characterizations revealed their particle sizes and demonstrated nanostructures of nanorods (ZnO-80 nm) and nanogranules (ZnO-20 and ZnO-40 nm). They exhibited significant ( p < 0.05) toxicity to HeLa cancer cells. HeLa cell viabilities at 1 mM dose reduced to 37, 32, 15 %, by ZnO-80, ZnO-40, and ZnO-20 nm, respectively, at 48 h. However, the same dose exerted different effects of 79.6, 76, and 75 % on L929 normal cells at 48 h. Measurement of reactive oxygen species (ROS) showed a considerable ROS yields on HeLa cells by all samples with a pronounced percentage (50 %) displayed by ZnO-20 nm. Moreover, ROS-mediated apoptosis induction and blocked cell cycle progression in the S, G2/M, and G0/G1 phases significantly ( p < 0.05). Apoptosis induction was further confirmed by DNA fragmentation and Hoechst-PI costained images viewed under fluorescence microscope. Additionally, morphological changes of HeLa cells visualized under light microscope showed assortment of cell death involved shrinkage, vacuolization and apoptotic bodies' formation. Most importantly, results exposed the impact of size and morphology of ZnO samples on their toxicity to Hela cells mediated mainly by ROS production. ZnO-20 nm in disk form with its nanogranule shape and smallest particle size was the most toxic sample, followed by ZnO-40 nm and then ZnO-80 nm. An additional proposed mechanism contributed in the cell death herein was ZnO decomposition producing zinc ions (Zn2+) into the acidic cancer microenvironment due to the smaller sizes of ZnO-NPs. This mechanism has been adopted in the literatures as a size-dependent phenomenon. The emerged findings were suggested to provide new platforms in the development of therapeutics as selective agents to the fatal cervical cancer, and to benefit from the synergistic influence of size and nanostructure when designing anticancer agents.
Zhou, Qu; Chen, Weigen; Xu, Lingna; Peng, Shudi
2013-01-01
Hierarchical flower-like ZnO nanorods, net-like ZnO nanofibers and ZnO nanobulks have been successfully synthesized via a surfactant assisted hydrothemal method. The synthesized products were characterized by X-ray powder diffraction and field emission scanning electron microscopy, respectively. A possible growth mechanism of the various hierarchical ZnO nanostructures is discussed in detail. Gas sensors based on the as-prepared ZnO nanostructures were fabricated by screen-printing on a flat ceramic substrate. Furthermore, their gas sensing characteristics towards methane were systematically investigated. Methane is an important characteristic hydrocarbon contaminant found dissolved in power transformer oil as a result of faults. We find that the hierarchical flower-like ZnO nanorods and net-like ZnO nanofibers samples show higher gas response and lower operating temperature with rapid response-recovery time compared to those of sensors based on ZnO nanobulks. These results present a feasible way of exploring high performance sensing materials for on-site detection of characteristic fault gases dissolved in transformer oil. PMID:23666136
Optical properties of P ion implanted ZnO
NASA Astrophysics Data System (ADS)
Pong, Bao-Jen; Chou, Bo-Wei; Pan, Ching-Jen; Tsao, Fu-Chun; Chi, Gou-Chung
2006-02-01
Red and green emissions are observed from P ion implanted ZnO. Red emission at ~680 nm (1.82 eV) is associated with the donor-acceptor pair (DAP) transition, where the corresponding donor and acceptor are interstitial zinc (Zn i) and interstitial oxygen (O i), respectively. Green emission at ~ 516 nm (2.40 eV) is associated with the transition between the conduction band and antisite oxygen (O Zn). Green emission at ~516nm (2.403 eV) was observed for ZnO annealed at 800 oC under ambient oxygen, whereas, it was not visible when it was annealed in ambient nitrogen. Hence, the green emission is most likely not related to oxygen vacancies on ZnO sample, which might be related to the cleanliness of ZnO surface, a detailed study is in progress. The observed micro-strain is larger for N ion implanted ZnO than that for P ion implanted ZnO. It is attributed to the larger straggle of N ion implanted ZnO than that of P ion implanted ZnO. Similar phenomenon is also observed in Be and Mg ion implanted GaN.
Miniaturized pH Sensors Based on Zinc Oxide Nanotubes/Nanorods
Fulati, Alimujiang; Ali, Syed M.Usman; Riaz, Muhammad; Amin, Gul; Nur, Omer; Willander, Magnus
2009-01-01
ZnO nanotubes and nanorods grown on gold thin film were used to create pH sensor devices. The developed ZnO nanotube and nanorod pH sensors display good reproducibility, repeatability and long-term stability and exhibit a pH-dependent electrochemical potential difference versus an Ag/AgCl reference electrode over a large dynamic pH range. We found the ZnO nanotubes provide sensitivity as high as twice that of the ZnO nanorods, which can be ascribed to the fact that small dimensional ZnO nanotubes have a higher level of surface and subsurface oxygen vacancies and provide a larger effective surface area with higher surface-to-volume ratio as compared to ZnO nanorods, thus affording the ZnO nanotube pH sensor a higher sensitivity. Experimental results indicate ZnO nanotubes can be used in pH sensor applications with improved performance. Moreover, the ZnO nanotube arrays may find potential application as a novel material for measurements of intracellular biochemical species within single living cells. PMID:22291545
Fujita, Seiya; Matsuura, Kazunori
2014-01-01
A viral β-annulus peptide connected with a zinc oxide (ZnO)-binding sequence (HCVAHR) at its N-terminal was synthesized, and the inclusion behavior of quantum-sized ZnO nanoparticles into the peptide nanocapsules formed by self-assembly of the peptide in water was investigated. Dynamic light scattering (DLS) measurements showed that ZnO nanoparticles (approximately 10 nm) in the presence of the peptide (0.1 mM) formed assemblies with an average size of 48 ± 24 nm, whereas ZnO nanoparticles in the absence of the peptide formed large aggregates. Transmission electron microscopy (TEM) observations of the ZnO nanoparticles in the presence of the peptide revealed that ZnO nanoparticles were encapsulated into the peptide nanocapsules with a size of approximately 50 nm. Fluorescence spectra of a mixture of the peptide and ZnO nanoparticles suggested that the ZnO surface and the peptide interact. Template synthesis of ZnO nanoparticles with the peptide nanocapsules afforded larger nanoparticles (approximately 40 nm), which are not quantum-sized ZnO. PMID:28344248
Fast synthesize ZnO quantum dots via ultrasonic method.
Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu
2016-05-01
Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.
Luminescent ZnO quantum dots as an efficient sensor for free chlorine detection in water.
Singh, Kulvinder; Mehta, S K
2016-04-21
Highly luminescent ZnO quantum dots (QDs) synthesized via a simple and facile route are used for the preparation of an optical sensor for the detection of free chlorine. The concentration of free chlorine greatly affects the PL emission of the ZnO QDs at 525 nm. Since hypochlorite gains electrons with high efficiency, it takes electrons from the oxygen vacancies of ZnO QDs, which gives rise to defect emission in ZnO QDs. UV-vis data analysis shows that free chlorine does not affect the optical absorption spectra of ZnO QDs. The optical sensing of free chlorine using ZnO QDs has several advantages, like quick response time, good selectivity and of course high sensitivity. The pH has very little effect on the PL emission of ZnO QDs. It does not interfere in the sensing mechanism for free chlorine. After 60 s, the response of the ZnO QDs remains stable. The present sensor shows high selectivity with respect to various common cations, as well as anions.
Integrated Freestanding Two-dimensional Transition Metal Dichalcogenides.
Jeong, Hyun; Oh, Hye Min; Gokarna, Anisha; Kim, Hyun; Yun, Seok Joon; Han, Gang Hee; Jeong, Mun Seok; Lee, Young Hee; Lerondel, Gilles
2017-05-01
This paper reports on the integration of freestanding transition metal dichalcogenides (TMDs). Monolayer (1-L) MoS 2 , WS 2 , and WSe 2 as representative TMDs are transferred on ZnO nanorods (NRs), used here as nanostructured substrates. The photoluminescence (PL) spectra of 1-L TMDs on NRs show a giant PL intensity enhancement, compared with those of 1-L TMDs on SiO 2 . The strong increases in Raman and PL intensities, along with the characteristic peak shifts, confirm the absence of stress in the TMDs on NRs. In depth analysis of the PL emission also reveals that the ratio between the exciton and trion peak intensity is almost not modified after transfer. The latter shows that the effect of charge transfer between the 1-L TMDs and ZnO NRs is here negligible. Furthermore, confocal PL and Raman spectroscopy reveal a fairly consistent distribution of PL and Raman intensities. These observations are in agreement with a very limited points contact between the support and the 1-L TMDs. The entire process reported here is scalable and may pave the way for the development of very efficient ultrathin optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Interface state density distribution in Au/n-ZnO nanorods Schottky diodes
NASA Astrophysics Data System (ADS)
Faraz, S. M.; Willander, M.; Wahab, Q.
2012-04-01
Interface states density (NSS) distribution is extracted in Au/ ZnO Schottky diodes. Nanorods of ZnO are grown on silver (Ag) using aqueous chemical growth (ACG) technique. Well aligned hexagonal-shaped vertical nanorods of a mean diameter of 300 - 450 nm and 1.3 -1.9 μm high are revealed in SEM. Gold (Au) Schottky contacts of thickness 60 nm and 1.5mm diameter were evaporated. For electrical characterization of Schottky diodes current-voltage (I-V) and capacitance-Voltage (C-V) measurements are performed. The diodes exhibited a typical non-linear rectifying behavior with a barrier height of 0.62eV and ideality factor of 4.3. Possible reasons for low barrier height and high ideality factor have been addressed. Series resistance (RS) has been calculated from forward I-V characteristics using Chueng's function. The density of interfacial states (NSS) below the conduction band (EC-ESS) is extracted using I-V and C-V measured values. A decrease in interface states density (NSS) is observed from 3.74 × 1011 - 7.98 × 1010 eV-1 cm-2 from 0.30eV - 0.61eV below the conduction band edge.
Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V; Pillai, Vijayamohanan K
2014-08-07
Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, "as grown" CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ∼ 470 μA cm(-2)) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.
NASA Astrophysics Data System (ADS)
Liu, Yanjun; Xu, Chunxiang; Lu, Junfeng; Zhu, Zhu; Zhu, Qiuxiang; Manohari, A. Gowri; Shi, Zengliang
2018-01-01
The porous structured zinc oxide (ZnO) microspheres decorated with silver nanoparticles (Ag NPs) have been fabricated as surface-enhanced Raman scattering (SERS) substrate for ultra-sensitive, highly reproducible and stable biological/chemical sensing of various organic molecules. The ZnO microspheres were hydrothermally synthesized without any template, and the Ag NPs decorated on microspheres via photochemical reaction in situ, which provided stable Ag/ZnO contact to achieve a sensitive SERS response. It demonstrates a higher enhancement factor (EF) of 2.44 × 1011 and a lower detection limit of 10-11 M-10-12 M. This porous SERS substrate could also be self-cleaned through a photocatalytic process and then further recycled for the detection of same or different molecules, such as phenol red (PhR), dopamine (DA) and glucose (GLU) with ultra-low concentration and it possessed a sensitive response. The excellent performances are attributed to morphology of porous microspheres, hybrid structure of semiconductor/metal and corresponding localized field enhancement of surface plasmons. Therefore, it is expected to design the recyclable ultra-sensitive SERS sensors for the detection of biological molecules and organic pollutant monitoring.
Effect of modifying agents on the hydrophobicity and yield of zinc borate synthesized by zinc oxide
NASA Astrophysics Data System (ADS)
Acarali, Nil Baran; Bardakci, Melek; Tugrul, Nurcan; Derun, Emek Moroydor; Piskin, Sabriye
2013-06-01
The aim of this study was to synthesize zinc borate using zinc oxide, reference boric acid, and reference zinc borate (reference ZB) as the seed, and to investigate the effects of modifying agents and reaction parameters on the hydrophobicity and yield, respectively. The reaction parameters include reaction time (1-5 h), reactant ratio (H3BO3/ZnO by mass: 2-5), seed ratio (seed crystal/(H3BO3+ZnO) by mass: 0-2wt%), reaction temperature (50-120°C), cooling temperature (10-80°C), and stirring rate (400-700 r/min); the modifying agents involve propylene glycol (PG, 0-6wt%), kerosene (1wt%-6wt%), and oleic acid (OA, 1wt%-6wt%) with solvents (isopropyl alcohol (IPA), ethanol, and methanol). The results of reaction yield obtained from either magnetically or mechanically stirred systems were compared. Zinc borate produced was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and contact angle tests to identify the hydrophobicity. In conclusion, zinc borate is synthesized successfully under the optimized reaction conditions, and the different modifying agents with various solvents affect the hydrophobicity of zinc borate.
Tavassoli Hojati, Sara; Alaghemand, Homayoon; Hamze, Faeze; Ahmadian Babaki, Fateme; Rajab-Nia, Ramazan; Rezvani, Mohammad Bagher; Kaviani, Mehrnoosh; Atai, Mohammad
2013-05-01
The aim of this study is evaluating the antibacterial activity of resin composites containing ZnO nanoparticles against Streptococcus mutans and examining their physical and mechanical properties. The properties of flowable resin composites containing 0-5wt.% nano-ZnO are investigated using different tests: Although the agar diffusion test reveals no significant difference between the groups, the direct contact test demonstrates that by increasing the nanoparticle content, the bacterial growth is significantly diminished (p<0.05). In the aging test, however, the antibacterial properties reduce significantly (p<0.05). The flexural strength and compressive modulus remains unchanged by incorporation of nanoparticles (p>0.05) while the compressive strength and flexural modulus significantly increase (p<0.05). The ZnO containing resins show significantly lower depth of cure (p<0.05), and higher bond strength (p<0.05). There is no significant difference between the degrees of conversion, measured by FTIR technique, of the groups (p>0.05). Production of a dental resin composite with antibacterial activity without significant sacrificing effect on the mechanical properties is desirable in dental material science. Copyright © 2013 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Lin, Jia-Yong; Pei, Yan-Li; Zhuo, Yi; Chen, Zi-Min; Hu, Rui-Qin; Cai, Guang-Shuo; Wang, Gang
2016-11-01
In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400 °C without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V @ 20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-III), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-II), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).